TW202006891A - Semiconductor substrate and manufacturing method thereof can obtain expected shape even if in condition of performing film formation or high-temperature heating - Google Patents

Abstract

An issue of the disclosure is to provide a semiconductor substrate that does not deform or hardly deforms even if in condition of performing film formation or high-temperature heating. A semiconductor substrate is provided with a surface having one side of a convex SORI and a surface having the other side of a concave SORI equivalent to the degree as the SORI, and having a thickness deviation that is below 3[mu]m.

Description

Semiconductor substrate and manufacturing method thereof

The present invention relates to a semiconductor substrate and a method of manufacturing the same.

In semiconductor integrated circuits (LSI: Large Scale Integration) or TFT-LCD (Thin Film Transistor-Liquid Crystal Display), requirements for miniaturization and high-speed operation are increasing, and the films formed on semiconductor substrates become denser.

If the flatness of the substrate for the polysilicon TFT is damaged, the glass wafer is held in the manufacturing process of the liquid crystal display device, or the robot is transported, which causes improper adsorption or inability to hold, or is forming In the process of photolithography applied to fine patterns in the process of polysilicon TFT, improper overlapping of patterns and the like are generated.　　 Furthermore, in the liquid crystal panel, if the flatness of the two transparent glass bodies does not match each other, the film thickness of the liquid crystal sandwiched therebetween is also difficult to be uniform, resulting in color unevenness, resulting in improper quality.　　 Furthermore, in the case of manufacturing a TFT-LCD using a polycrystalline silicon thin film, the substrate is caused to undergo viscous deformation and warpage due to the processing temperature reaching 1000°C or higher.

In order to solve these problems, for example, Patent Document 1 proposes to provide an active device substrate made of high-purity quartz glass material by suppressing the content of hydroxyl group concentration and chlorine concentration to provide excellent heat resistance.　　 Furthermore, Patent Document 2 proposes a method of forming a silicon nitride film on the front and back surfaces of a substrate so that the stress is offset on the front and back surfaces of the substrate to prevent warpage of the substrate. In addition, Patent Document 3 discloses that by setting the fluorine concentration within a certain range and using quartz glass that does not substantially contain an alkali metal oxide, the density change due to the hypothetical temperature is reduced, and before and after high-temperature treatment is obtained It is a method of quartz glass substrate for polycrystalline silicon TFT LCD with excellent size stability. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 6-11705 　　 [Patent Document 2] Japanese Patent Laid-Open No. 11-121760 　　 [Patent Document 3] Japanese Patent Laid-Open No. 2005-215319

[Problems to be solved by the invention]

However, in the method of Patent Document 1, even if the flatness of the quartz glass material is improved, the deformation due to the film stress of the polycrystalline silicon thin film afterward cannot be suppressed. In addition, in the method of Patent Document 2, unless the same film is formed on the front and back surfaces of the substrate, the occurrence of warpage cannot be ruled out, but because the same film is used to configure the double sides of the TFT side and the color filter side, it is not In general, it is difficult to suppress deformation even with this method. Also, even with the method of Patent Document 3, although the dimensional stability before and after the high-temperature treatment is excellent, it is not possible to suppress deformation due to film stress.

The present invention was created in view of the above circumstances, and its object is to provide a semiconductor substrate and a method for manufacturing the same that are not deformed or less deformed even when film formation or high-temperature heat treatment is performed. [Means to solve the problem]

In order to achieve the above object, the present inventors have carefully studied the results and found that using a manufacturing device like a double-sided polishing device, a single-sided polishing device, a double-sided polishing device, or a single-sided polishing device, which are generally used in the manufacture of semiconductor substrates, can be cost-effective The SORI or BOW is arbitrarily controlled with good reproducibility, and the thickness of the semiconductor substrate is small, more specifically, the above device is premised on the case where the semiconductor substrate is deformed by film stress or high temperature heat treatment , Considering the amount of deformation in advance, plan to fabricate a substrate that is warped in the opposite direction to the deformation, so that even if the film is formed or high-temperature heat treatment, no deformation or less deformation can be obtained The semiconductor substrate of the present invention is completed.

That is, the present invention provides the following: 　　 1. A semiconductor substrate, characterized in that it has a surface having one side of a convex SORI and another surface having a concave SORI of the same degree as the above SORI, And the thickness deviation is 3 μm or less.　　 2. The semiconductor substrate according to 1, wherein the SORI of the above-mentioned surfaces is 50 to 600 μm.　　 3. The semiconductor substrate according to 1 or 2, wherein the BOW of one of the surfaces of the convex SORI is +25 to +300.　　 4. The semiconductor substrate according to any one of 1 to 3, wherein the BOW of the other surface of the concave SORI is -25 to -300.　　 5. The semiconductor substrate according to any one of 1 to 4, wherein the thickness is 0.5 to 3 mm.　　 6. The semiconductor substrate according to any one of 1 to 5, wherein the shape of the semiconductor substrate is a circular shape with a diameter of 100 to 450 mm or a rectangular shape with a diagonal length of 100 to 450 mm in plan view.　　 7. The semiconductor substrate according to any one of 1 to 6, which is made of synthetic quartz glass.　　 8. The substrate for semiconductor according to any one of 1 to 7, which is a substrate for polysilicon TFT. 9. A method for manufacturing a substrate for semiconductors, comprising: a 　　 preparation process, which prepares a transfer master, and the transfer master has a front surface and a back surface, and has a surface opposite to the back surface by connecting the front surfaces The middle point on the center line of the center point, the surface orthogonal to the center line, the SORI and thickness deviation of the above surface and the back surface symmetrically facing each other; The double-sided polishing device is provided with two raw material substrates, and the surface of each raw material substrate that is not in contact with the transfer master is processed to produce the shape of the transfer master, which is transferred to two single-sided surfaces. Sheet transfer substrate; 　　 polishing process, by polishing both sides of the transfer substrate, or by polishing only the surface of the transfer substrate in the transfer process does not transfer the shape of the transfer master And manufacture a polished substrate; and grind both sides or one side of the polished substrate. 10. A method for manufacturing a substrate for semiconductors, characterized by comprising: 　　 preparation process, which prepares a transfer master, and the transfer master has a front surface and a back surface, with respect to the center of the front and back surfaces connected by the The middle point on the center line of the point is the plane orthogonal to the center line, either side of the front and back sides is parallel, and the other side of the front and back sides that is in contact with the raw substrate is orthogonal to the above The center line is also symmetrical with respect to the center line; transfer process, which is to set the raw material substrate on the single-side polishing device in such a way as to be in contact with the other surface of the transfer master, and to the raw material substrate The surface that is not in contact with the transfer master is processed to produce the transfer substrate whose shape is transferred to a single-sided transfer substrate; 　　 polishing process, which is by polishing the double transfer substrate Surface, or by polishing only the surface of the transfer substrate that is not transferred to the shape of the transfer master in the transfer process, and a polished substrate; and a double-sided or single-sided surface of the polished substrate Perform grinding. [Effect of invention]

According to the present invention, it is possible to provide a semiconductor substrate having a specific SORI and thickness variation in consideration of the deformation of the semiconductor substrate due to film stress or high-temperature heat treatment in advance. Therefore, even in the case where film formation or high-temperature heat treatment is performed later, a semiconductor substrate in a desired shape can be obtained. Furthermore, the semiconductor substrate of the present invention can be manufactured at low cost and with good reproducibility using a double-sided polishing device or a single-sided polishing device or a double-sided polishing device or a single-sided polishing device commonly used in the manufacture of semiconductor substrates .

Hereinafter, the present invention will be specifically described. The semiconductor substrate according to the present invention is characterized by having one surface having a convex SORI and the other surface having a concave SORI having the same degree as SORI, and having a thickness deviation of 3 μm or less. In this way, by deliberately manufacturing a semiconductor substrate that warps in a direction opposite to the deformation generated after the film formation or high-temperature heat treatment before the film formation or high-temperature heat treatment, the stage of manufacturing the device or the stage of assembly can be A semiconductor substrate of the desired shape is obtained. Specifically, a semiconductor substrate is produced in which the warped shape is previously concave to the same degree as when it becomes convex by film formation or high-temperature heating process, and convex to the same degree as when it is changed into concave.

Although the SORI in the semiconductor substrate of the present invention is not particularly limited, as long as the semiconductor substrate finally obtained can be formed into a desired shape, from the viewpoint of operability, it is preferably 50 to 600 μm, more preferably It is 100~400μm, the best is 100~200μm. The form of SORI in the present invention is not particularly limited. For example, when a semiconductor substrate is deformed centrally symmetrically into a convex shape by film formation or high-temperature heating process, if a concave semiconductor substrate with a centrally symmetrical shape is manufactured (Refer to FIG. 1(A)), if the semiconductor substrate is deformed into a convex shape and the center of the vertex is shifted to a convex shape in the Y-axis direction, it is sufficient if a concave semiconductor substrate matching the deviation is manufactured (refer to 1(B)), when the semiconductor substrate is deformed into a line-symmetric convex shape with respect to a line passing through the center, a line-symmetric concave semiconductor substrate may be manufactured (see FIG. 1(C)).

Here, as shown in FIG. 2, SORI in the present invention refers to the sum of the minimum value (absolute value) a and the minimum value (absolute value) b of the distance between the least square plane S and the surface of the semiconductor substrate A ( SORI=|a|+|b|).　　 In addition, if the surface of the substrate sufficiently reflects light and the interference pattern with the reference surface of the device can be obtained, SORI can be measured using an optical interference flat tester. Conversely, if the surface of the substrate is rough and the interference pattern cannot be obtained, the SORI can be obtained by scanning the laser displacement meter so as to penetrate the front and back of the substrate.

In addition, in the semiconductor substrate of the present invention, the thickness deviation (TTV) is considered to be easy to focus during exposure, and the pattern thickness is set to be constant, and is set to 3 μm or less, preferably 2 μm or less, and more preferably 1 μm or less.　　 Here, the thickness deviation as shown in FIG. 4 means the value C minus the thickness of the thinnest part in the plane of the substrate A. In addition, the thickness deviation is the same as SORI, and can be measured using an optical interference flatness tester or a laser displacement meter.

Furthermore, the semiconductor substrate of the present invention preferably has a BOW of one side of the convex SORI of +25 to +300, and a BOW of the other side of the concave SORI of -25 to -300 is better. In the present invention, BOW digitizes the difference between the center of the substrate surface and the height of the smallest squared average surface obtained as the surface reference, and defines the case where it is located on the upper side of the reference plane, the + sign, and the case where it is on the lower side. -symbol. Thus, at least in the center of the substrate, it can be determined whether the shape of the substrate is convex or concave. When the SORI is convex, the BOW on one side is preferably +25~+300, more preferably +25~+200, most preferably +25~+100, and the BOW on the other side is preferably- 25~-300, better -25~-200, best -25~-100. In addition, when the SORI is concave, the BOW on one side is preferably -25 to -300, more preferably -50 to -200, most preferably -50 to -100, and the BOW on the other side is better It is +25~+300, more preferably +50~+200, and the best is +50~+100. In this way, in addition to the specific SORI described above, by specifying the height of the center of the substrate as BOW, the convexity and concavity can be made clear as numerical values, and a semiconductor substrate of the desired shape can be obtained.

Here, as shown in FIG. 3, the BOW in the present invention is based on the intersection of the reference plane S2 obtained from the front and back middle plane e and the substrate center line f orthogonal to the reference plane S2, and the front and back middle plane e In the distance d, if the front and back middle plane e is higher than the upper side of the reference plane S2, it is marked as positive, and if the front and back middle plane e is lower than the lower side of the reference plane S2, it is marked as negative, and the absolute value d is marked as BOW.　　 In addition, if the surface of the substrate sufficiently reflects light and the interference pattern with the reference surface of the device can be obtained, the BOW can be measured using a light interference flat tester. Conversely, if the surface of the substrate is rough and the interference pattern cannot be obtained, the BOW can be obtained by scanning the laser displacement meter so as to penetrate the front and back of the substrate.

In addition, although the thickness of the semiconductor substrate is not particularly limited, from the viewpoint of the operability of the substrate or the thickness of the exposure device that can be introduced, it is preferably 0.5 to 3.0 mm, and more preferably 0.6 to 1.2 mm.

In the present invention, the shape of the semiconductor substrate is not particularly limited, and a general shape such as a circular shape or a rectangular shape in plan view may be adopted. Furthermore, although the diameter or diagonal length of these is not particularly limited, it is preferably 100 to 450 mm, and more preferably 200 to 300 mm. Although the material of the substrate for semiconductors of the present invention is not particularly limited, materials known in the art such as glass materials and ceramic materials can be used, but from the point of view of the need for light to pass through the substrate for the transmissive polysilicon TFT, it is synthesized Quartz glass substrates are preferred. In the case of reflective TFTs, polycrystalline silicon substrates are preferred.

As a method of manufacturing the semiconductor substrate of the present invention having the above-mentioned SORI and BOW, a method of setting a desired shape in any of the cutting process, polishing process, and polishing process can be considered. However, in the cutting process, when a general wire saw cuts, since the slurry containing the abrasive is applied to the linearly stretched wire and the ingot is cut, the semiconductor substrate obtained is horizontal The direction is the direction of the wire and becomes linear with the wire. In addition, in the vertical direction perpendicular to the wire direction on the surface of the semiconductor substrate, although the method of lowering or raising the ingot is adopted, this direction is due to the mechanism of good reproducibility and linearity to move, so it is difficult Move SORI and BOW arbitrarily.　　Furthermore, since the thickness of the semiconductor substrate is relatively thinner than the diameter, the substrate that becomes the motive force for making the desired SORI shape in the polishing process or the polishing process has less repeated stress. As a result, it is difficult to set the SORI on the surface to be convex, that is, to be BOW positive, and to make the SORI on the back to be concave, that is, to be BOW because the polishing process will maintain the original SORI and BOW. Negative, freely control the shape of the substrate.

Therefore, in the present invention, a transfer master is used to manufacture a semiconductor substrate having the expected SORI and BOW shapes in a polishing process. The shape of the transfer master used in the present invention differs depending on the type of polishing device used in the transfer process or the shape of the target semiconductor substrate. For example, in the case of using a double-sided polishing device, a centrally symmetric SORI-shaped semiconductor substrate can be prepared by: a preparation process, which prepares a transfer master, and the transfer master has a front surface and a back surface, having Relative to the center point on the center line that connects the center points of the front and back surfaces, the surface and back surface are symmetrically opposed to the SORI and thickness deviation by the surface orthogonal to the center line; the transfer process is used to carry the prepared transfer In the master mode, two raw material substrates are provided on the double-sided polishing device, and the surface of each raw material substrate that is not in contact with the transfer master is processed to produce the shape of the transfer master and transferred to each single side Two transfer substrates; polishing process, which is made by polishing both sides of the transfer substrate obtained in the transfer process, or only polishing the shape of the transfer master in the transfer substrate without being transferred Polishing the substrate, and grinding and polishing both sides or one side of the substrate.

Furthermore, in the case of using a single-sided polishing device, a centrally symmetric SORI-shaped semiconductor substrate can be prepared by: preparing a transfer master, which has a surface and a back surface, with respect to By connecting the middle point on the center line of the center points of the front and back surfaces, the surface orthogonal to the center line, either side of the front and back surfaces is parallel, and the other side of the front and back surfaces that is in contact with the raw substrate The surface is orthogonal to the center line and symmetrical with respect to the center line at the same time; in the transfer process, the raw material substrate is provided on the single-side polishing device by contacting the other side of the prepared transfer master, and the raw material substrate Among them, the surface that is not in contact with the transfer master is processed to make the transfer master. The shape of the transfer master is transferred to the single-sided transfer substrate; polishing process, which is to polish both sides of the transfer substrate, or only polishing In the transfer substrate, the shape of the transfer master is not transferred, a polished substrate is produced, and both sides or one side of the polished substrate are polished and manufactured.

The double-sided polishing device and single-sided polishing device used in the present invention are not particularly limited, and can be appropriately selected and used from known devices. Transferring the double-side polishing apparatus projects and the number of rotations of the single-side polishing apparatus preferably 5 ~ 50rpm begin with, the load at 10 ~ 200g / cm preferably, in the double-side polishing apparatus, per unit of time to the substituted ^2-bis The faces are almost the same.

Although the material of the transfer master is not particularly limited, alumina ceramic, metal, resin, etc. can be used, but from the viewpoint of deformation or breakage, alumina ceramic is preferable.　　 Furthermore, as the abrasive, in addition to using an alumina-based abrasive having an average particle size of preferably 5 to 20 μm, and a dispersion of 20 to 60% by mass in water, silicon carbide or artificial diamond may also be used.

In the transfer process, when double-sided polishing is used, two raw material substrates are enclosed in the carrier in such a way that the transfer master is inserted as described above, and they are respectively provided under the double-sided polishing device to polish the platen And polish the platen on the upper side for processing. Generally, although the double-sided polishing device adjusts the thickness of the carrier in conjunction with the thickness of one raw material substrate, in the case of the present invention, the thickness of the carrier is set to be thick considering the thickness of the two raw material substrates and the transfer master Better. In addition, it can be processed without any special difference from ordinary polishing. At this stage, since it becomes the processing of each single-sided side of the two raw material substrates at the same time, the shape of the transfer master is only transferred to the single-sided side that is in contact with the lower polishing platen and the upper polishing platen. Since the surface in contact with the transfer master is not processed, there is no change.

Since the center of the transfer master is thicker than the outer periphery, the processing pressure of the raw substrate and polishing platen is concentrated at the center of the raw substrate at the beginning of the transfer process. At this time, since the raw material substrate is thin and there is little reaction force, cutting is selectively performed from the center of the raw material substrate. When cutting is performed and the processing reaches the outer periphery of the raw material substrate, the shape of the final transfer master is transferred to the surface of the raw material substrate that does not contact the transfer master (that is, it is in contact with the polishing platen Face). When the outer peripheral portion of the transfer master is thinner than the central portion, the outer peripheral portion of the raw material substrate obtained in the transfer process becomes thicker than the central portion due to the difference in thickness between the outer peripheral portion and the central portion. Conversely, when the outer peripheral portion of the transfer master is thicker than the central portion, the outer peripheral portion of the raw material substrate obtained in the transfer process becomes thinner than the central portion due to the difference in thickness between the outer peripheral portion and the central portion. In this way, the shape to be transferred can be created according to the shape of the transfer master.

In addition, in the transfer process, when a single-sided polishing device is used, between the raw material substrate and the top plate of the single-sided polishing device, a transfer master is provided so that the flat surface faces the top plate side, and the After the carrier substrate is fixed to the top plate in such a way that the raw material substrate and the transfer master do not fall off laterally, the raw material substrate is processed. The raw material substrate is processed by the polishing platen on the lower side of the single-side polishing device. As the processing proceeds, the shape of the transfer master is transferred only to the surface on the polishing platen side of the raw material substrate.

For the transfer substrate that has undergone the above transfer process, a double-sided polishing device or a single-sided polishing device is used for polishing. The rotation speed of the double-sided polishing device and the single-sided polishing device is preferably 5-50 rpm, and the load is preferably 10-200 g/cm ² . In the case of using a double-sided polishing device, a transfer substrate is provided so that the flat surface faces the polishing platen side of the upper side of the double-sided polishing device, and a carrier for preventing the substrate from falling off is provided to perform normal polishing. Thereby, a polished substrate in which the upper side is polished into a convex shape and the lower side is polished into a concave shape is obtained. The SORI value of the polished substrate becomes about half of the SORI value before polishing, and the degree of reduction also depends on the diameter and thickness of the transfer substrate. The principle of making the shape of the front and back of the surface is that the thickness difference existing in the initial shape causes an in-plane processing pressure difference from the initial processing on both sides, thereby selectively and chronologically changing the part to be cut. With this, the processing distribution in the substrate surface is also processed with this change. As a result, it also depends on the reaction force of the transfer substrate, that is, the diameter and thickness of the transfer substrate, and the original substrate shape before the polishing process is halved, while reflecting the shape of both sides.

In the case of using a single-sided polishing device, between the lower polishing platen and the top plate, a transfer substrate is provided with a flat surface facing the lower polishing platen side, so that the transfer substrate does not fall off laterally The carrier is polished. In this case, since only the surface that has not been transferred is polished, the SORI of the transfer-side surface of the original transfer platen is the same as the SORI of the polished substrate obtained.

In order to mirror-finish the polished substrate obtained by the above-mentioned polishing process, a double-sided or single-sided polishing process is further performed as required.　　 In the polishing process, a double-sided polishing device or a single-sided polishing device can be used. The mirror-finished surface may be either a positive surface with convex SORI and BOW or a negative surface with concave SORI and BOW. In this way, finally, various semiconductor substrates having the expected shapes (SORI and BOW) as shown in FIG. 1 can be produced.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 5 is an embodiment of a transfer process using the double-sided polishing apparatus 1 related to the first embodiment of the present invention. In this embodiment, as shown in FIG. 5, the two raw material substrates 11 and 11 are enclosed in the carrier 12 in such a manner that they are encased in the transfer master 10, and are respectively installed in the double-sided polishing device. 1 Lower polishing platen 13 and upper polishing platen 14.

As shown in FIG. 6, the transfer master 10 used in this embodiment has a center line L1 relative to the center point 100A passing through the front surface 100 of the transfer master 10 and the center point 110A of the back surface 110. The middle point M1 of each center point 100A, 110A, and is orthogonal to the imaginary plane S1 of the center line L1, the convex SORI and thickness deviation of the surface 100 and the back surface 110 symmetrically facing each other, has a symmetrical relative to the center line L1 Table back shape.

Furthermore, the raw material substrate 11 used in the present embodiment is manufactured by cutting a crystal ingot made of synthetic quartz glass using a wire, chamfering, and removing the saw marks on the front and back surfaces by a double-sided polishing device. 100mm, thickness 630μm, SORI on the front and back are 6μm, and BOW on the front and back are +3μm, -3μm, thickness deviation is 1μm disc-shaped.

As described above, in a state where two raw material substrates 11 are provided, the single-sided side of each raw material substrate 11 is processed at the same time with a rotation speed of 20 rpm of the double-sided polishing device 1 and a load of 100 g/cm ² to obtain a transfer master. The shape of 10 is transferred to the transfer substrate on one side. Next, as shown in FIG. 7, the shape of the transfer master 10 is transferred to the single-sided transfer substrate 11A so that the flat surface faces the upper polishing platen 14 side of the double-side polishing device 1. One piece is set inside the carrier 12 and is subjected to double-sided polishing at a rotation number of 20 rpm and a load of 100 g/cm ^2. Even if the surface is not transferred in the transfer process, the shape of the transfer master 10 is transferred. In this way, a polished substrate in which the upper side is polished into a convex shape and the lower side is polished into a concave shape can be obtained.

With respect to the obtained polished substrate, by mirroring both sides with a double-sided polishing device (not shown), a synthetic quartz glass substrate having SORI with center symmetry as shown in FIG. 1(A) can be obtained. Specifically, the SORI on the surface is convex at 50 μm, the BOW is +25 μm, the SORI on the back is concave at 50 μm, the BOW is -25 μm, the in-plane thickness deviation is 1 μm, and the 500 μm thick double-sided mirror is synthetic quartz Glass base board.

FIG. 8 shows an embodiment of the transfer process using the single-side polishing device 2 related to the second embodiment of the present invention. In addition, in the second embodiment, the same members as those in the first embodiment described above are given the same symbols. As shown in FIG. 9, the transfer master 20 used in this embodiment has a center line L2 that passes through the center point 200A connecting the front surface 200 of the transfer master 20 and the center point 210A of the back surface 210. The middle point M2 of each center point 200A, 210A, and orthogonal to the imaginary plane S2 of the center line L2, the surface 200 is parallel (flat surface), the back 210 is perpendicular to the center line L2, and is symmetrical with respect to the center line L2 Along the convex shape.

In addition, the raw material substrate 21 used in the present embodiment is manufactured in the same manner as the first embodiment, the diameter is 200 mm, the thickness is 855 μm, the SORI on the front and back sides is 6 μm, and the thickness deviation is 1 μm. Disc-shaped synthetic quartz glass substrate.

As shown in FIG. 8, it is arranged such that the flat surface of the transfer master 20 faces the top plate 25 side, and is set to be in contact with the transfer master 20 along the convex surface. The raw material substrate 21 is set in the single-side polishing device 2, and these are enclosed in the carrier 12 at a rotation number of 20 rpm and a load of 100 g/cm2. By the lower polishing platen 13, only the raw material substrate 21 is processed. The surface on which the printing master 20 is in contact is obtained, thereby obtaining a transfer substrate whose shape is transferred to the single-sided side.

Next, as shown in FIG. 10, between the polishing platen 13 on the lower side of the single-side polishing device 2 and the top plate 25, the shape of the transfer master 20 is transferred to the transfer substrate 21A on the single-side side. In a state where the shape of the transfer master disk 20 to be transferred faces the top plate 25 side, it is installed inside the carrier 12 and is polished on one side at a rotation number of 20 rpm and a load of 100 g/cm ² , even for In the printing process, the surface of the transfer master 20 is also transferred by transferring the shape of the transfer master plate 20, thereby obtaining a polished substrate whose upper side is polished into a concave shape and whose lower side is polished into a convex shape.

With respect to the obtained polished substrate, as in the first embodiment, by mirroring both sides, a synthetic quartz glass substrate having SORI with center symmetry as shown in FIG. 1(A) can be obtained. Specifically, the surface has a convex shape of SORI100μm, BOW is +50μm, the back surface is SORI110μm concave, and BOW is -50μm, the in-plane thickness deviation is 1μm, and the thickness is 725μm. .

In addition, the shape, thickness and SORI of the transfer master used in the manufacturing method of the semiconductor substrate of the present invention, the shape and material of the raw material substrate, and the specific conditions of each process, etc. are not limited to the above-mentioned embodiments In addition, changes or improvements within the scope that can achieve the purpose and effect of the invention are also included in the present invention.

For example, in the case of manufacturing a semiconductor substrate having non-centrosymmetric SORI using a double-sided polishing device, in the above-described first embodiment, the transfer master 30 shown in FIG. 11 may be used. The transfer master 30 has an imaginary plane S3 that is relative to the middle point M3 of the vertices 300A and 310A among the straight lines L3 passing through the apex 300A of the front surface 300 and the apex 310A of the back surface 310, and is orthogonal to the straight line L3. The surface 300 and the back surface 310 are symmetrically convex SORIs facing each other. Using this transfer master 30, as in the first embodiment, by performing transfer processing, polishing processing, polishing processing, etc., a convex apex as shown in FIG. 1(B) can be shifted from the center The convex shape in the Y-axis direction can obtain a semiconductor substrate with positive BOW warpage.

In addition, in the case of manufacturing a semiconductor substrate having non-centrosymmetric SORI using a single-side polishing device, in the second embodiment described above, the transfer master 40 shown in FIG. 12 may be used. The transfer master 40 has an intermediate point M4 between the vertex 410A and the intermediate point M4 in the straight line L4 passing through the vertex 410A connecting the back surface 410 and the partial point 400A on the opposite surface 400, and is in line with the straight line The imaginary plane S4 where L4 is orthogonal, the front surface 400 is parallel (flat surface), and the back surface 410 is a convex SORI. Using this transfer master 40, as in the second embodiment, by performing transfer processing, polishing processing, polishing processing, etc., a convex apex as shown in FIG. 1(B) can be shifted from the center The convex shape in the Y-axis direction can obtain a semiconductor substrate with positive BOW warpage.

In addition, in the first embodiment described above, when the XY axis orthogonal to the surface of the transfer master as shown in FIG. 13 is provided, the thickness viewed from the cross section in the X direction and the Y direction is used The shape holds a thickness deviation that is linearly symmetrical with respect to the center line (Y axis in FIG. 13) passing through the center of the surface of the transfer master which is inclined from the center to the outer circumference in the X direction and the Y direction. In the case of a printing master, the semiconductor substrate shown in FIG. 1(C) can be obtained. In addition, the curve on the inside of the substrate in FIG. 13 represents the contour of thickness. [Example]

Hereinafter, although the examples and comparative examples are given to explain the present invention more specifically, the present invention is not limited to the following examples.

[Example 1] As the transfer master, a shape as shown in FIG. 6 was prepared. Specifically, the SORIs prepared for the front and back surfaces are all the same, 110 μm convex, with respect to the middle point on the center line passing through the center point connecting the back and front surfaces, the surface orthogonal to the center line, the front and back surfaces are symmetrically opposed, and the thickness The deviation is 220μm with a central thickness of 3mm and a diameter of 100mm made of alumina ceramic transfer master. Furthermore, the wire saw E450E-12 made by Toyo Advanced Machine Tool Co., Ltd. was used to cut the ingot made of synthetic quartz glass, chamfering, and the saw marks on the back and back of the table were removed by a double-sided polishing device. The diameter was 100 mm and the thickness was prepared. 630μm, raw material substrate with SORI of 6μm and thickness deviation of 1μm on the front and back respectively. Using the above-mentioned transfer master, place the two raw material substrates on the lower polishing platen and upper polishing platen of the double-sided polishing device, and use aluminum oxide with the serial number #1000 as the main component for polishing The material was processed at a rotation speed of 20 rpm and a load of 100 g/cm ² while processing the single-sided side of each raw material substrate to obtain a transfer substrate in which the shape of two transfer masters was transferred to the single-sided side. The shapes of the obtained transfer substrates were all concavely warped by 110 μm on one side.

Set one of the obtained transfer substrates on the double-sided polishing device, the same as the above transfer process, using the polishing material, the number of rotations 20rpm, load 100g/cm ² double-sided polishing process, even for the previous transfer process The transferred surface also transfers the shape of the transfer master. Furthermore, a polished substrate with a SORI surface of 50 μm convex, BOW of +25 μm, a back surface of SORI of 50 μm concave, and a BOW of -25 μm was obtained. In addition, as a process of polishing both sides of the polished substrate obtained by polishing, the two sides were mirror-finished with a double-sided device to obtain a convex shape with a surface of SORI50μm and a BOW of +25μm, and a concave surface with a surface of SORI50μm and a BOW of +25μm , In-plane thickness deviation (TTV) is 1μm, and the thickness is 500μm, the double-sided mirror quartz glass substrate. Next, on the surface of the obtained synthetic quartz glass substrate, silane gas was supplied to form an amorphous silicon film, and then annealed to form a polycrystalline silicon film. The film-forming surface changed to SORI122μm convex shape, and the other surface changed to SORI1222μm concave. Then, after further heat treatment at 1050°C for one hour, the film-forming surface can be changed to a convex shape of SORI 4 μm, and the other surface can be changed to a concave shape of SORI 4 μm. The in-plane thickness deviation (TTV) is 1 μm, and it has almost flat SORI's synthetic quartz glass substrate for polysilicon TFT.

[Example 2] After the transfer process was carried out in the same manner as in Example 1 using a double-sided polishing device, the obtained transfer substrate was set so that the surface to which the shape of the transfer master was transferred faced the single-sided polishing device On the top plate side, a single-side polishing process was performed at a rotation number of 200 rpm and a load of 100 g/cm ² to obtain a polished substrate. Furthermore, the polished substrates obtained on both sides were ground in the same manner as in Example 1. The surface was convex with SORI110μm and BOW was +55μm, the back surface was SORI with 110μm concave and BOW was -55μm, and the in-plane thickness deviation (TTV) is a synthetic quartz glass substrate with a mirror surface of 1 μm and a thickness of 500 μm. Next, after forming a polycrystalline silicon film on the obtained synthetic quartz glass substrate in the same manner as in Example 1, the film-forming surface changed to a convex shape of SORI 122 μm, and the other surface changed to a concave shape of SORI 122 μm. Then, after further heat treatment at 1050°C for one hour, the film-forming surface can be changed to a convex shape of SORI 4 μm, and the other surface can be changed to a concave shape of SORI 4 μm. The in-plane thickness deviation (TTV) is 1 μm, and it has almost flat SORI's synthetic quartz glass substrate for polysilicon TFT.

[Example 3] As the transfer master, a shape as shown in FIG. 9 was prepared. Specifically, one of the front and back surfaces is flat, and the other surface is orthogonal to the center line connecting the centers of the front and back surfaces, and is symmetrically convexly warped by 110 μm with respect to the center line, and The in-plane thickness deviation (TTV) is a transfer master disk made of alumina with a thickness of 2 mm at the center of 110 μm and a diameter of 200 mm. As a raw material substrate, a quartz glass substrate having a diameter of 200 mm, a thickness of 855 μm, a SORI of 6 μm on the front and back sides, and a thickness deviation of 1 μm was prepared in the same manner as in Example 1. Between the raw material substrate and the top plate of the single-side polishing device, the above-mentioned transfer master is provided so that the flat surface faces the top plate side, and a polishing material with alumina as the main component of the serial number #1000 is used to The number of rotations was 20 rpm and the load was 100 g/cm ^2. The single-sided side of the raw material substrate was processed to obtain a transfer substrate whose shape of the transfer master was transferred to the single-sided side. The shape of the obtained transfer substrate was flat on one side, and the other side was warped by 110 μm concavely.

Next, between the polishing platen on the lower side of the single-side polishing device and the top plate, a transfer substrate is provided so that the surface to be transferred faces the top plate side of the single-side polishing device, and the polishing material is used in the same manner as the above transfer process. One-sided processing was performed at a rotation number of 20 rpm and a load of 100 g/cm ² to obtain a polished substrate. The obtained processed substrate was a polished processed substrate with a SORI 10 μm convex surface and a back surface SORI 110 μm concave shape. In addition, the single surface of the convex side was mirror-finished with a single-sided polishing device to obtain a convex surface with a SORI of 110 μm and a BOW of +55 μm, and a back surface with a concave of a SORI of 110 μm and a BOW of -55 μm, and the in-plane thickness deviation (TTV ) Is a synthetic quartz glass substrate of 1 μm and a thickness of 725 μm. In the same manner as in Example 1, after the polysilicon film was formed on the obtained synthetic quartz glass substrate, the film-forming surface changed to a convex shape of SORI 122 μm, and the other surface changed to a concave shape of SORI 122 μm. Then, after further heat treatment at 1050°C for one hour, the film-forming surface can be changed to a convex shape of SORI 4 μm, and the other surface can be changed to a concave shape of SORI 4 μm. The in-plane thickness deviation (TTV) is 1 μm, and it has almost flat SORI's synthetic quartz glass substrate for polysilicon TFT.

[Example 4] In the same manner as in Example 1, the transfer substrate obtained by the transfer process in the same manner as in Example 3 was subjected to double-sided polishing to obtain a convex shape with a surface of SORI50 μm and a back surface of SORI150 μm. Concave polished substrate. In addition, the two sides were polished in the same manner as in Example 1 to obtain a convex surface with a SORI of 150 μm and a BOW of +25 μm, a reverse surface with a SORI of 50 μm and a concave shape with a BOW of -25 μm, a thickness deviation of 1 μm, and a thickness of 725 μm. It is a synthetic quartz glass substrate with mirror surface.　　In the same manner as in Example 1, after forming a polycrystalline silicon film on the obtained synthetic quartz glass substrate, the film-forming surface changed to a convex shape of SORI 122 μm, and the other surface changed to a concave shape of SORI 122 μm. Then, after further heat treatment at 1050°C for one hour, the film-forming surface was changed into a convex shape of SORI 4 μm, and the other surface was changed into a concave shape of SORI 4 μm. The thickness deviation (TTV) was 1 μm. Synthetic quartz glass substrate for polysilicon TFT.

[Example 5] As a transfer master, a shape as shown in FIG. 11 was prepared. Specifically, the shapes of the front and back surfaces are prepared to be convex shapes symmetrical to each other. The SORIs are 110 μm, and the in-plane thickness deviation (TTV) is 220 μm, which is the thickest at a position offset by 30 mm from the center point of the front and back surfaces. An alumina ceramic transfer master with a thickness of 3000 μm and a diameter of 100 mm. As a raw material substrate, in the same manner as in Example 1, a synthetic quartz glass substrate having a diameter of 100 mm, a thickness of 630 μm, a SORI of 6 μm on the front and back sides, and an in-plane thickness deviation (TTV) of 1 μm was prepared. In the same manner as in Example 1, a single-sided side of two raw material substrates was simultaneously processed by a double-sided polishing device to obtain a transfer substrate whose shape of the transfer master was transferred to the single-sided side. The shapes of the obtained transfer substrates were all concavely warped by 110 μm on one side. Furthermore, the thinnest part of the concave is offset by 30 mm from the center.

Set the obtained transfer substrate on the double-sided polishing device and perform double-sided polishing in the same way as in Example 1. Even if the transfer substrate is not transferred in the previous transfer process, the transfer master is transferred. For the shape, a polished substrate with a SORI50 μm convex surface and a backside SORI50 μm concave shape was obtained. Moreover, the surface of the convex side of the polished substrate obtained was mirror-finished with a single-side polishing device to obtain a convex shape with a mirror surface of SORI150μm and a BOW of +20μm, a rough surface with a concave shape of SORI50μm and a BOW of -20μm, surface Synthetic quartz glass substrate with an internal thickness deviation (TTV) of 1 μm and a thickness of 500 μm.　　 Next, after forming a polysilicon film on the surface of the obtained synthetic quartz glass substrate in the same manner as in Example 1, the film-forming surface changed to a convex shape of SORI 122 μm, and the other surface changed to a concave shape of SORI 122 μm. After further heat treatment at 1100°C for two hours, the film-forming surface can be changed to a convex shape of SORI 4 μm, and the other surface can be changed to a concave shape of SORI 4 μm. The thickness deviation is 1 μm. Synthetic quartz glass substrate.

[Example 6] As in Example 5, one of the front and back surfaces is flat, and the other surface is convexly warped by 110 μm, and the in-plane deviation (TTV) is 220 μm, from the front and back The center point is the thickest where the center point is offset by 30 mm, and the thickness of the part is 3000 μm, and the transfer master is made of alumina ceramic with a diameter of 100 mm. As the raw material substrate, the same as in Example 5 was prepared. In the same manner as in Example 3, the single-sided side of the raw material substrate was processed by a single-sided polishing device to obtain a transfer substrate whose shape of the transfer master was transferred to the single-sided side. The shape of the obtained transfer substrate was flat on one side and warped by 110 μm on the other side in a concave shape. Furthermore, the thinnest part of the concave is offset by 30 mm from the center. The obtained transfer substrate was set in a single-side polishing device, and the single-side polishing process was performed in the same manner as in Example 2, even for the surface on the opposite side of the transfer substrate that was not transferred in the transfer process. The shape of the master for transfer was to obtain a polished substrate with a convex surface of SORI110μm and a concave surface of SORI110μm. The convex surface of the polished substrate obtained was mirror-finished with a single-side lapping device to obtain a convex surface with a mirror surface of SORI110μm and a BOW of +50μm, a rough surface with a concave surface of SORI of 110μm and a BOW of -50μm, surface Synthetic quartz glass substrate with an internal thickness deviation (TTV) of 1 μm and a thickness of 500 μm.　　 Next, after forming a polysilicon film on the surface of the obtained synthetic quartz glass substrate in the same manner as in Example 1, the film-forming surface changed to a convex shape of SORI 122 μm, and the other surface changed to a concave shape of SORI 122 μm. Then, after further heat treatment at 1100°C for two hours, the film-forming surface can be changed to a convex shape of SORI 4 μm, and the other surface can be changed to a concave shape of SORI 4 μm. The in-plane thickness deviation is 1 μm. The polycrystalline silicon with almost flat SORI Synthetic quartz glass substrate for TFT.

[Comparative Example 1] 　　 As a transfer master, prepared SORI of the front and back sides was 110 μm, one side was convex, the other side was concave, the thickness was 2 mm, the thickness deviation was 2 μm and constant, and the diameter was 100 mm alumina As the raw material substrate, a master for transfer was prepared as in Example 1.　　Using a double-sided polishing device, the raw material substrate was subjected to transfer processing in the same manner as in Example 1, to obtain a transfer substrate with a SORI of 1 μm on the front and back surfaces. In addition, the transfer substrate obtained was mirrored on both sides with a double-sided polishing device to obtain a SORI of 1 μm on the front and back and a BOW of +0.5 μm on the front and a BOW of -0.5 μm on the back. The in-plane thickness deviation (TTV) was Synthetic quartz glass substrate with a mirror surface of 1 μm and a thickness of 500 μm on both sides.　　In the same manner as in Example 1, after forming a polycrystalline silicon film on the obtained synthetic quartz glass substrate, the film-forming surface changed to a convex shape of SORI 120 μm, and the other surface changed to a concave shape of SORI 120 μm. After that, after further heat treatment at 1050°C for one hour, the in-plane thickness deviation (TTV) was maintained at 1 μm, the film-forming surface changed to a SORI 60 μm convex shape, and the other surface changed to a SORI 61 μm concave shape. Flat SORI.

[Comparative Example 2] As a master for transfer, the SORI of the front and back sides was prepared to be 110 μm, one side was convex, the other side was concave, the in-plane thickness deviation (TTV) was 1 μm, the thickness was 2 mm, and the diameter was 200 mm The aluminum oxide transfer master was prepared as the raw material substrate in the same manner as in Example 4. In the same manner as in Example 4, after the transfer process of the raw material substrate was performed using a single-sided polishing device, the transfer substrate obtained was polished using a double-sided polishing device with a rotation number of 20 rpm and a load of 100 g/cm ² to obtain The polished substrate with SORI of 1 μm on the back of the table. Furthermore, the polished substrates obtained were polished on both sides to obtain a SORI of 1 μm on the front and back and a BOW of +0.5 μm on the front, a BOW of -0.5 μm on the back, an in-plane thickness deviation (TTV) of 1 μm, and a thickness of 725 μm. Synthetic quartz glass substrate. In the same manner as in Example 1, after the polysilicon film was formed on the obtained synthetic quartz glass substrate, the in-plane thickness deviation (TTV) was maintained at 1 μm, the film-forming surface changed to a SORI 120 μm convex shape, and the other surface changed to SORI 120μm concave. Then, after further heat treatment at 1050°C for one hour, the in-plane thickness deviation (TTV) was 1 μm as it was, and the film-forming surface changed to a SORI 60 μm convex shape, and the other surface changed to a SORI 61 μm concave shape. Flat SORI.

[Comparative Example 3] As a transfer master, the SORI of the front and back surfaces was prepared to be 110 μm, one side was convex, the other side was concave, and the in-plane thickness deviation (TTV) was 1 μm, the thickness was 2 mm, and the diameter was 110 mm The aluminum oxide transfer master was prepared as the raw material substrate in the same manner as in Example 2. In the same manner as in Example 2, after the transfer process of the raw material substrate using the double-sided polishing device, the flat surface of the shape of the transfer master that has not been transferred faces the top plate side of the single-sided polishing device The transfer substrate was polished under the same conditions as in Example 2 to obtain a polished substrate with a SORI of 1 μm on the surface. In addition, the single surface of the polished substrate was mirror-finished with a single-side polishing device, the SORI of the obtained surface was 1 μm and the BOW of the surface was +0.5 μm, the BOW of the back surface was -0.5 μm, and the in-plane thickness deviation (TTV) was 1 μm, synthetic quartz glass substrate with a thickness of 500 μm.　　In the same manner as in Example 1, after forming a polycrystalline silicon film on the obtained synthetic quartz glass substrate, the film-forming surface changed to a convex shape of SORI 120 μm, and the other surface changed to a concave shape of SORI 120 μm. Then, after further heat treatment at 1050°C for one hour, the in-plane thickness deviation (TTV) was 1 μm as it was, and the film-forming surface changed to a convex shape of SORI 60 μm, and the other surface changed to a concave shape of SORI 61 μm, which could not be expected. Flat SORI.

[Comparative Example 4] 　　 As a transfer master, the SORI of the front and back sides was prepared to be 110 μm, one side was convex, the other side was concave, the in-plane thickness deviation (TTV) was 1 μm, the thickness was 2 mm, and the diameter was 200 mm The aluminum oxide transfer master was prepared as the raw material substrate in the same manner as in Example 4. In the same manner as in Example 4, after the transfer process of the raw material substrate was performed using a single-sided polishing device, the flat surface of the transfer master whose shape was not transferred was set to face the top plate side of the single-sided polishing device The transfer substrate was polished under the same conditions as in Example 2 to obtain a polished substrate with a SORI of 1 μm on the surface. In addition, the single surface of the polished substrate was mirror-finished with a single-side polishing device, the SORI of the obtained surface was 1 μm and the BOW of the surface was +0.5 μm, the BOW of the back surface was -0.5 μm, and the in-plane thickness deviation (TTV) was 1μm, synthetic quartz glass substrate with a thickness of 725μm.　　In the same manner as in Example 1, after forming a polycrystalline silicon film on the obtained synthetic quartz glass substrate, the film-forming surface changed to a convex shape of SORI 120 μm, and the other surface changed to a concave shape of SORI 120 μm. After 　　, after further heat treatment at 1050°C for one hour, the in-plane thickness deviation remained the same as 1 μm, the film-forming surface changed to a SORI 60 μm convex shape, and the other surface changed to a SORI 61 μm concave shape, and the expected flat SORI could not be obtained.

The conclusions of the above examples and comparative examples are shown in Table 1.

A‧‧‧Semiconductor substrate 1‧‧‧Double-sided polishing device 2 Single-sided polishing device 10, 20, 30, 40 ‧‧‧ Transfer master 11A, 21A ‧‧‧ Transfer substrate 100, 200, 300, 400‧‧‧Transfer master surface 110, 210, 310, 410‧‧‧ Transfer master back 100A, 110A, 200A, 210A‧‧‧‧center point L1, L2‧‧‧center point S1 S2, S3, S4 ‧‧‧ imaginary plane (plane perpendicular to the center line) 11, 21 ‧‧‧ raw substrate

1 shows the state of SORI of the semiconductor substrate of the present invention, (A) shows a state where the center is symmetrically warped into a convex shape, and (B) shows a state where the apex of the warped and convex shape is shifted from the center to the Y-axis direction In a convex state, (C) indicates a state in which it is warped into a line-symmetric convex state. In addition, the inner curve on the surface indicates the contour line of the display height. 2 is an explanatory diagram of the SORI of the semiconductor substrate of the present invention, where S represents the least square plane, a represents the minimum distance between the surface S and the surface of the semiconductor substrate A, and b represents the surface of the surface S and the surface of the semiconductor substrate A The maximum distance. 3 is an explanatory diagram of the BOW of the semiconductor substrate of the present invention, e represents the middle surface of the front and back, S2 represents the reference plane obtained from e, and f represents the centerline of the substrate, so that in the distance between S2 and e crossing with f, If e is higher than the upper side of S2, +d is marked, and if it is lower than S2, the way of -d is marked, BO is defined as a symbol for d. FIG. 4 is a diagram showing the thickness deviation c of the semiconductor substrate of the present invention. FIG. 5 is a schematic diagram showing a transfer process using a double-sided polishing device related to the first embodiment of the present invention. FIG. 6 is a side view showing the transfer master with SORI used for center symmetry used in the first embodiment. FIG. 7 shows a schematic diagram of a polishing process using a double-sided polishing device related to the first embodiment. FIG. 8 shows a schematic diagram of a transfer process using a single-side polishing device related to the second embodiment of the present invention. FIG. 9 is a side view showing a transfer master with SORI having a center symmetry used in the second embodiment. FIG. 10 shows a schematic diagram of a polishing process using a single-side polishing device related to the second embodiment. FIG. 11 is a side view showing a transfer master with non-central symmetry SORI related to a modification of the first embodiment. FIG. 12 is a side view showing a transfer master with non-central symmetry SORI related to a modification of the second embodiment. FIG. 13 is a top view and a side view showing a transfer master related to another modification of the first embodiment.

Claims (10)

A semiconductor substrate characterized by having a surface having one side of a convex SORI and another surface having a concave SORI of the same degree as the above SORI, and having a thickness deviation of 3 μm or less. The substrate for semiconductor as described in claim 1, wherein the SORI of the above-mentioned surfaces is 50 to 600 μm. The substrate for semiconductor as described in claim 1 or 2, wherein the BOW of one side of the above-mentioned convex SORI is +25~+300. The substrate for semiconductor as described in any one of claims 1 to 3, wherein the BOW of the other side of the SORI having the concave shape is -25 to -300. The substrate for semiconductor as described in any one of claims 1 to 4, wherein the thickness of 　　 is 0.5~3mm. The substrate for semiconductor as described in any one of claims 1 to 5, wherein the shape of the above-mentioned semiconductor substrate is a circular shape with a diameter of 100 to 450 mm or a rectangular shape with a diagonal length of 100 to 450 mm in plan view. The substrate for semiconductor as described in any one of claims 1 to 6, wherein 　　 is made of synthetic quartz glass. The substrate for semiconductor as described in any one of claims 1 to 7, wherein 　　 is a substrate for polysilicon TFT. A method for manufacturing a semiconductor substrate, characterized by comprising: a 　　preparation process, which prepares a transfer master, and the transfer master has a front surface and a back surface, and has a center point relative to the back surface of the front surface through the connection The middle point on the center line of the center, the surface orthogonal to the center line, the SORI and the thickness deviation of the surface and the back surface symmetrically facing each other; 　　transfer engineering, which is carried out by inserting the transfer master disk on both sides The polishing device is provided with two raw material substrates, and the surfaces of the raw material substrates that are not in contact with the transfer master are processed to produce two pieces of the transfer master whose shape is transferred to each single surface Transfer substrate; 　　 polishing process, by polishing both sides of the transfer substrate, or by polishing only the surface of the transfer substrate in the transfer process is not transferred to the shape of the transfer master And manufacture a polished substrate; and grind both sides or one side of the polished substrate. A method for manufacturing a semiconductor substrate, characterized by comprising: a 　　preparation process, which prepares a transfer master, and the transfer master has a front surface and a back surface, with respect to the center point connecting the front and back surfaces The middle point on the center line is the plane orthogonal to the center line, either side of the front and back sides is parallel, and the other side of the front and back sides that is in contact with the raw substrate is orthogonal to the center line At the same time, it is symmetrical with respect to the center line; transfer process, which is to set the raw material substrate on the single-side polishing device in contact with the other surface of the transfer master plate, and the raw material substrate is not The surface in contact with the transfer master is processed to produce the transfer substrate whose shape is transferred to a single-sided transfer substrate; 　　 polishing process, which is by polishing both sides of the transfer substrate, Or by polishing only the surface of the transfer substrate that is not transferred to the shape of the transfer master in the transfer process; and polishing the double-sided or single surface of the polished substrate .

Images