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TW201941331A - Reduced-pressure drying apparatus, substrate processing apparatus, and reduced-pressure drying method performing reduced-pressure treatment at a pressure reduction rate closer to a desired pressure reduction rate - Google Patents

Reduced-pressure drying apparatus, substrate processing apparatus, and reduced-pressure drying method performing reduced-pressure treatment at a pressure reduction rate closer to a desired pressure reduction rate Download PDF

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TW201941331A
TW201941331A TW107145494A TW107145494A TW201941331A TW 201941331 A TW201941331 A TW 201941331A TW 107145494 A TW107145494 A TW 107145494A TW 107145494 A TW107145494 A TW 107145494A TW 201941331 A TW201941331 A TW 201941331A
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pressure
opening degree
reduced
target
pressure value
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TW107145494A
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TWI682481B (en
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實井祐介
西岡賢太郎
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日商斯庫林集團股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0406Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being air
    • H10P72/04
    • H10P72/0408

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  • Drying Of Solid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Coating Apparatus (AREA)

Abstract

本發明的目的在於提供一種在減壓乾燥裝置中以與期望的減壓速度更接近的減壓速度來進行減壓處理的技術。所述減壓乾燥裝置1通過在腔室內收容附著有處理液的基板並對腔室內進行減壓,而使基板乾燥。減壓乾燥裝置1具有腔室、減壓排氣部30、對減壓排氣的流量進行調節的閥45、對腔室內的壓力進行測量的測量部25及控制部60。控制部60的動作控制部64包括:初始開度設定部641,在各處理期間的起點將閥開度設為基準開度S63;以及反饋控制部642,基於測量部25所測量的測量壓力值S25進行包含比例控制的反饋控制。反饋控制部642在進行使閥開度大於基準開度S63的控制的第1狀態下,根據目標壓力值或測量壓力值S25來變更比例控制係數。An object of the present invention is to provide a technique for performing a reduced-pressure treatment in a reduced-pressure drying device at a reduced-pressure speed closer to a desired reduced-pressure speed. The reduced-pressure drying apparatus 1 dries a substrate by accommodating a substrate to which a processing solution is attached and decompressing the inside of the chamber. The reduced-pressure drying device 1 includes a chamber, a reduced-pressure exhaust unit 30, a valve 45 that adjusts the flow rate of the reduced-pressure exhaust, a measurement unit 25 that measures the pressure in the chamber, and a control unit 60. The operation control section 64 of the control section 60 includes an initial opening degree setting section 641 that sets the valve opening degree to the reference opening degree S63 at the starting point of each processing period, and a feedback control section 642 based on the measured pressure value measured by the measuring section 25 S25 performs feedback control including proportional control. The feedback control unit 642 changes the proportional control coefficient based on the target pressure value or the measured pressure value S25 in the first state in which the valve opening degree is greater than the reference opening degree S63.

Description

減壓乾燥裝置、基板處理裝置及減壓乾燥方法Vacuum drying device, substrate processing device, and vacuum drying method

本發明涉及一種對附著有處理液的基板進行減壓乾燥的技術。The present invention relates to a technique for drying a substrate to which a processing liquid is adhered under reduced pressure.

先前,在半導體晶片(wafer)、液晶顯示裝置或有機電致發光(Electroluminescence)顯示裝置等的平板顯示器(Flat Panel Display,FPD)用基板、光掩膜(photo mask)用玻璃基板、彩色濾光片(color filter)用基板、記錄磁盤(disk)用基板、太陽能電池用基板、電子紙(paper)用基板等精密電子裝置用基板的製造過程中,為了使塗布至基板的處理液乾燥而使用減壓乾燥裝置。所述減壓乾燥裝置具有收容基板的腔室及將腔室內的氣體予以排出的排氣裝置。關於先前的減壓乾燥裝置,例如在專利文獻1中有所記載。Previously, substrates for flat panel display (FPD) substrates, glass substrates for photo masks, and color filters have been used in semiconductor wafers, liquid crystal display devices, and organic electroluminescence display devices. In the manufacturing process of substrates for precision electronic devices such as color filter substrates, recording disk substrates, solar cell substrates, and electronic paper substrates, in order to dry the processing liquid applied to the substrates, Decompression drying device. The reduced-pressure drying device includes a chamber for accommodating a substrate, and an exhaust device for exhausting gas in the chamber. A conventional vacuum drying device is described in, for example, Patent Document 1.

在對塗布至基板的光致抗蝕劑(photoresist)等處理液進行乾燥並形成薄膜的情況下,若進行急劇的減壓,則有可能出現突沸。突沸是因塗布至基板表面的光致抗蝕劑中的溶劑成分急劇地蒸發而產生。當在減壓乾燥處理過程中產生突沸時,會產生在光致抗蝕劑的表面形成小的泡的脫氣現象。因此,在減壓乾燥處理中,需要在初始階段階段性地進行減壓,而非使腔室內急劇地減壓。 [現有技術文獻] [專利文獻]When a processing liquid such as a photoresist applied to a substrate is dried to form a thin film, bump abruption may occur if a rapid pressure reduction is performed. Bumping occurs when the solvent component in the photoresist applied to the substrate surface evaporates rapidly. When bumping occurs during the reduced-pressure drying process, a degassing phenomenon is formed in which small bubbles are formed on the surface of the photoresist. Therefore, in the reduced-pressure drying process, it is necessary to reduce the pressure stepwise in the initial stage, instead of rapidly reducing the pressure in the chamber. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2006-261379號公報[Patent Document 1] Japanese Patent Laid-Open No. 2006-261379

[發明所要解決的問題] 為了對腔室內的壓力進行階段性的變更,需要對減壓速度進行調節。在專利文獻1所記載的減壓乾燥裝置中,通過在減壓處理中一面對腔室內的氣體進行排氣一面將惰性氣體供給至腔室內而對減壓速度進行調節。而且,為了恰當地調節減壓速度,在惰性氣體的供給源與腔室之間設有能夠多階段地變更開度的閥。[Problems to be Solved by the Invention] In order to periodically change the pressure in the chamber, it is necessary to adjust the decompression speed. In the reduced-pressure drying device described in Patent Document 1, the decompression speed is adjusted by supplying an inert gas into the chamber while exhausting the gas in the chamber during the decompression process. In addition, in order to appropriately adjust the decompression speed, a valve capable of changing the opening degree in multiple stages is provided between the supply source of the inert gas and the chamber.

而且,作為對腔室內的減壓速度進行調節的其他方法,也可以在腔室與排氣裝置之間設置能夠多階段地變更開度的閥來調整從腔室的排氣量。此時,可階段性地調整從腔室的排氣量而無需將惰性氣體供給至腔室內。為了在對惰性氣體的供給量及從腔室的排氣量中的任一者進行調整的情況下,也以期望的減壓速度進行減壓處理,需要將所述閥設定為與所述減壓速度相應的開度。所述開度既可以根據包含比例控制的反饋控制來適當決定,也可以針對腔室的每種種類預先設定。Further, as another method of adjusting the decompression speed in the chamber, a valve capable of changing the opening degree in multiple stages may be provided between the chamber and the exhaust device to adjust the amount of exhaust gas from the chamber. At this time, the amount of exhaust gas from the chamber can be adjusted in stages without supplying an inert gas into the chamber. In order to perform the decompression process at a desired decompression rate even when adjusting the supply amount of the inert gas and the exhaust amount from the chamber, it is necessary to set the valve to be equal to the decompression process. The opening degree corresponding to the pressing speed. The opening degree may be appropriately determined according to the feedback control including the proportional control, or may be set in advance for each type of the chamber.

然而,在使用反饋控制對腔室內的壓力進行控制的情況下,有可能在大氣壓附近產生振盪(hunting)現象。另一方面,在預先設定了開度的情況下,若真空度變高,則難以正確地預想塗布至基板的處理液的溶劑成分的蒸發量,所以存在無法獲得期望的減壓速度的情況。如此,任一方法均存在在期望的減壓速度與現實的減壓速度之間產生背離的情況。However, when the pressure in the chamber is controlled using feedback control, hunting may occur near the atmospheric pressure. On the other hand, when the degree of opening is set in advance, if the degree of vacuum becomes high, it is difficult to accurately predict the evaporation amount of the solvent component of the processing liquid applied to the substrate, so that a desired decompression rate may not be obtained. As described above, in either method, a deviation may occur between a desired decompression speed and a real decompression speed.

本發明有鑒於所述情況而成,目的在於提供一種可在具有能夠多階段地變更開度的閥的減壓乾燥裝置中,以與期望的減壓速度更接近的減壓速度來進行減壓處理的技術。 [解決問題的技術手段]The present invention has been made in view of the circumstances, and an object of the present invention is to provide a reduced-pressure drying device having a valve capable of changing the opening degree in multiple stages, so as to reduce the pressure at a reduced pressure speed closer to a desired reduced pressure speed. Processing technology. [Technical means to solve the problem]

為了解決所述課題,本申請的第1發明是一種減壓乾燥裝置,對附著有處理液的基板進行減壓乾燥,所述減壓乾燥裝置具有:腔室,收容所述基板;減壓排氣部,對所述腔室內進行減壓排氣;閥,設置於所述腔室與所述減壓排氣部之間,通過閥開度對減壓排氣的流量進行調節;測量部,對所述腔室內的壓力進行測量;以及控制部,與各部電性連接,所述控制部具有:動作控制部,在執行減壓乾燥處理時,基於多個處理期間的每一個的目標壓力值及目標到達時間,對所述閥開度進行控制,所述動作控制部包括:初始開度設定部,在各處理期間的起點將所述閥開度設為基準開度;以及反饋控制部,基於所述測量部所測量的測量壓力值,通過包含比例控制的反饋控制對所述閥開度進行控制,所述反饋控制部在進行使所述閥開度大於所述基準開度的控制的第1狀態下,根據所述目標壓力值或所述測量壓力值來變更比例控制係數。In order to solve the problem, the first invention of the present application is a reduced-pressure drying device for reducing the pressure of a substrate to which a processing liquid is attached. The reduced-pressure drying device includes a chamber that houses the substrate, and a reduced-pressure exhaust. The air part, which performs decompression and exhaust of the chamber; a valve, which is arranged between the chamber and the decompression and exhaust part, and adjusts the flow of the decompression and exhaust by the valve opening degree; the measurement part, Measuring the pressure in the chamber; and a control unit, which is electrically connected to each unit, the control unit includes: an operation control unit that, when performing the reduced-pressure drying process, is based on a target pressure value for each of a plurality of processing periods And the target arrival time to control the valve opening degree, the action control unit includes: an initial opening degree setting unit that sets the valve opening degree to a reference opening degree at a starting point of each processing period; and a feedback control unit, Based on the measured pressure value measured by the measurement unit, the valve opening degree is controlled by feedback control including proportional control, and the feedback control unit is performing control to make the valve opening degree greater than the reference opening degree. First In the 1 state, the proportional control coefficient is changed according to the target pressure value or the measured pressure value.

本申請的第2發明是第1發明的減壓乾燥裝置,其中,所述反饋控制部在進行使所述閥開度小於所述基準開度的控制的第2狀態下,使用規定的基準比例控制係數來進行比例控制,在所述第1狀態下,隨著所述目標壓力值或所述測量壓力值變小而使所述比例控制係數變大。The second invention of the present application is the reduced-pressure drying device of the first invention, wherein the feedback control unit uses a predetermined reference ratio in a second state in which the valve opening degree is controlled to be smaller than the reference opening degree. The proportional control is performed by controlling the coefficient. In the first state, the proportional control coefficient becomes larger as the target pressure value or the measured pressure value becomes smaller.

本申請的第3發明是第2發明的減壓乾燥裝置,其中,所述控制部將從0 Pa起至大氣壓即100,000 Pa為止分割為至少三個壓力區域,所述反饋控制部在所述第1狀態下,當所述目標壓力值或所述測量壓力值包含在最大的所述壓力區域中時,使所述比例控制係數小於所述基準比例控制係數,當所述目標壓力值或所述測量壓力值包含在最小的所述壓力區域中時,使所述比例控制係數大於所述基準比例控制係數。A third invention of the present application is the reduced-pressure drying device of the second invention, wherein the control unit is divided into at least three pressure regions from 0 Pa to atmospheric pressure, that is, 100,000 Pa, and the feedback control unit is in the first In the 1 state, when the target pressure value or the measured pressure value is included in the maximum pressure region, the proportional control coefficient is made smaller than the reference proportional control coefficient, and when the target pressure value or the When the measured pressure value is included in the minimum pressure region, the proportional control coefficient is made larger than the reference proportional control coefficient.

本申請的第4發明是第1發明的減壓乾燥裝置,其中,所述反饋控制部在所述第1狀態及進行使所述閥開度小於所述基準開度的控制的第2狀態這兩者中,隨著所述目標壓力值或所述測量壓力值變小而使所述比例控制係數變大。The fourth invention of the present application is the reduced-pressure drying device of the first invention, wherein the feedback control unit is in the first state and the second state in which control for making the valve opening degree smaller than the reference opening degree is performed. Of the two, as the target pressure value or the measured pressure value becomes smaller, the proportional control coefficient becomes larger.

本申請的第5發明是第1發明至第4發明中的任一減壓乾燥裝置,其中,所述反饋控制部進行包含所述比例控制及積分控制的所述反饋控制。The fifth invention of the present application is any one of the first to fourth inventions, wherein the feedback control unit performs the feedback control including the proportional control and the integral control.

本申請的第6發明是第1發明至第4發明中的任一減壓乾燥裝置,其中,所述反饋控制部進行包含所述比例控制、積分控制及微分控制的所述反饋控制。The sixth invention of the present application is any one of the first to fourth inventions, wherein the feedback control unit performs the feedback control including the proportional control, integral control, and differential control.

本申請的第7發明是第1發明至第6發明中的任一減壓乾燥裝置,其中,所述控制部還具有:目標資料獲取部,獲取包含各處理期間的所述目標壓力值及所述目標到達時間的目標資料;基礎資料獲取部,針對規定的多個所述閥開度中的每一個,獲取表示減壓排氣引起的所述腔室內的壓力與到達所述壓力的到達時間的關係的基礎資料;以及基準開度決定部,基於所述基礎資料與所述目標資料的比較來決定所述基準開度。The seventh invention of the present application is any one of the first to sixth inventions of the reduced-pressure drying device, wherein the control unit further includes a target data acquisition unit that acquires the target pressure value and the target pressure including each processing period. The target data of the target arrival time; the basic data acquisition unit acquires, for each of a plurality of the valve opening degrees, a pressure indicating the pressure in the chamber caused by the decompression exhaust and the arrival time to the pressure; Basic data of the relationship; and a reference opening degree determination unit, which determines the reference opening degree based on a comparison between the basic data and the target data.

本申請的第8發明是第7發明的減壓乾燥裝置,其中,所述基準開度決定部針對所述處理期間的每一個,從所述基礎資料中,針對每一個所述閥開度,參照從大氣壓起到達所述處理期間的初始壓力值的到達時間即第1時間及從大氣壓起到達所述目標壓力值的到達時間即第2時間,算出所述第2時間與所述第1時間的差分,基於所述差分與所述目標到達時間一致或近似的所述閥開度,決定減壓乾燥處理執行時的所述閥開度。An eighth invention of the present application is the reduced-pressure drying device of the seventh invention, wherein the reference opening degree determination unit is for each of the processing periods, from the basic data, for each of the valve opening degrees, The second time and the first time are calculated with reference to a first time that is the arrival time of the initial pressure value from the atmospheric pressure to the processing period and a second time that is the time to reach the target pressure value from the atmospheric pressure. Based on the valve opening degree in which the difference is the same as or similar to the target arrival time, the valve opening degree in the execution of the reduced-pressure drying process is determined.

本申請的第9發明是第8發明的減壓乾燥裝置,其中,所述基準開度決定部在存在所述差分與所述目標到達時間一致的所述閥開度的情況下,將所述差分與所述目標到達時間一致的所述閥開度決定為所述基準開度,在不存在所述差分與所述目標到達時間一致的所述閥開度的情況下,將所述差分大於所述目標到達時間且所述差分最近似於所述目標到達時間的所述閥開度決定為所述基準開度。A ninth invention of the present application is the reduced-pressure drying device according to the eighth invention, wherein the reference opening degree determining unit, when the valve opening degree in which the difference coincides with the target arrival time, sets the reference opening degree The valve opening degree whose difference is consistent with the target arrival time is determined as the reference opening degree, and when the valve opening degree where the difference is consistent with the target arrival time is determined, the difference is greater than The valve opening degree of the target arrival time and the difference closest to the target arrival time is determined as the reference opening degree.

本申請的第10發明是第1發明至第9發明中的任一減壓乾燥裝置,其中,所述閥是通過改變閥體的角度來調節開度。The tenth invention of the present application is any one of the first to ninth inventions of the reduced-pressure drying device, wherein the valve adjusts the opening degree by changing the angle of the valve body.

本申請的第11發明是一種基板處理裝置,對所述基板進行抗蝕劑液的塗布及顯影,所述基板處理裝置具有:塗布部,對曝光處理前的所述基板塗布所述抗蝕劑液;根據權利要求1至10中任一項所述的減壓乾燥裝置,對附著有所述抗蝕劑液的所述基板進行減壓乾燥;以及顯影部,對實施有所述曝光處理的所述基板進行顯影處理。An eleventh invention of the present application is a substrate processing apparatus that applies and develops a resist solution to the substrate, the substrate processing apparatus includes a coating section that applies the resist to the substrate before exposure processing The reduced-pressure drying device according to any one of claims 1 to 10, wherein the substrate to which the resist solution is adhered is dried under reduced pressure; and a developing unit is configured to perform the exposure treatment on the substrate. The substrate is subjected to a development process.

本申請的第12發明是一種減壓乾燥方法,通過將附著有處理液的基板收容在腔室內並對所述腔室內進行減壓,而使所述基板乾燥,所述減壓乾燥方法包括:a)資料獲取工序,針對一個或多個處理期間,獲取包含目標壓力值及目標到達時間的目標資料、以及與所述目標資料相應的基準開度;b)設定工序,在所述處理期間的起點,將對從所述腔室的減壓排氣的流量進行調節的閥的閥開度設定為所述基準開度;以及c)控制工序,在所述處理期間開始後,基於測量部所測量的所述腔室內的測量壓力值進行包含比例控制的反饋控制,在所述工序c)中,在進行使所述閥開度大於所述基準開度的控制的第1狀態下,根據所述目標壓力值或所述測量壓力值對比例控制係數進行變更。The twelfth invention of the present application is a reduced-pressure drying method. The substrate is dried by accommodating a substrate to which a processing solution is attached in a chamber and decompressing the chamber. The reduced-pressure drying method includes: a) a data acquisition process, for one or more processing periods, acquire target data including a target pressure value and a target arrival time, and a reference opening corresponding to the target data; b) a setting process, during the processing period, Starting point, setting a valve opening degree of a valve that regulates a flow of the depressurized exhaust gas from the chamber to the reference opening degree; and c) a control step based on a measurement section after the processing period is started The measured pressure value in the chamber to be measured is subjected to feedback control including proportional control. In the step c), in a first state in which control to make the valve opening degree greater than the reference opening degree is performed, The target pressure value or the measured pressure value changes a proportional control coefficient.

本申請的第13發明是第12發明的減壓乾燥方法,其中,在所述工序c)中,在進行使所述閥開度小於所述基準開度的控制的第2狀態下,使用規定的基準比例控制係數來進行比例控制,在所述第1狀態下,隨著所述目標壓力值或所述測量壓力值變小而使所述比例控制係數變大。A thirteenth invention of the present application is the reduced-pressure drying method according to the twelfth invention, wherein in the step c), in a second state in which control to make the valve opening degree smaller than the reference opening degree is performed, a predetermined condition is used. The proportional control coefficient is used to perform proportional control. In the first state, as the target pressure value or the measured pressure value becomes smaller, the proportional control coefficient becomes larger.

本申請的第14發明是第13發明的減壓乾燥方法,其中,在所述工序c)中,在所述第1狀態下,當所述目標壓力值或所述測量壓力值包含在至少三個壓力區域中的最大的所述壓力區域中時,使所述比例控制係數小於所述基準比例控制係數,當所述目標壓力值或所述測量壓力值包含在最小的所述壓力區域中時,使所述比例控制係數大於所述基準比例控制係數。The fourteenth invention of the present application is the reduced-pressure drying method of the thirteenth invention, wherein in the step c), in the first state, when the target pressure value or the measured pressure value is included in at least three When the pressure region is the largest among the pressure regions, the proportional control coefficient is made smaller than the reference proportional control coefficient, and when the target pressure value or the measured pressure value is included in the minimum pressure region To make the proportional control coefficient larger than the reference proportional control coefficient.

本申請的第15發明是第12發明的減壓乾燥方法,其中,在所述工序c)中,在所述第1狀態及進行使所述閥開度小於所述基準開度的控制的第2狀態這兩者中,隨著所述目標壓力值或所述測量壓力值變小而使所述比例控制係數變大。A fifteenth invention of the present application is the reduced-pressure drying method of the twelfth invention, wherein in the step c), the first state and the first step of performing control to make the valve opening degree smaller than the reference opening degree are performed. In both states, the proportional control coefficient becomes larger as the target pressure value or the measured pressure value becomes smaller.

本申請的第16發明是第12發明至第15發明中的任一減壓乾燥方法,其中,在所述工序c)中進行包含所述比例控制及積分控制的所述反饋控制。The sixteenth invention of the present application is any one of the twelfth invention to the fifteenth invention, wherein the feedback control including the proportional control and the integral control is performed in the step c).

本申請的第17發明是第12發明至第15發明中的任一減壓乾燥方法,其中,在所述工序c)中進行包含所述比例控制、積分控制及微分控制的所述反饋控制。The seventeenth invention of the present application is any one of the twelfth invention to the fifteenth invention, wherein the feedback control including the proportional control, integral control, and differential control is performed in the step c).

本申請的第18發明是第12發明至第17發明中的任一減壓乾燥方法,其中,所述工序a)包括:a1)學習工序,針對多個所述閥開度中的每一個,獲取表示減壓排氣引起的所述腔室內的壓力與到達所述壓力的到達時間的關係的基礎資料;a2)目標資料獲取工序,獲取所述目標資料;以及a3)基準開度決定工序,在所述工序a1)及所述工序a2)之後,基於所述基礎資料及所述目標資料來決定所述基準開度。The eighteenth invention of the present application is any one of the twelfth invention to the seventeenth invention, wherein the step a) includes: a1) a learning step for each of a plurality of the valve opening degrees, Acquiring basic data representing the relationship between the pressure in the chamber caused by the decompression exhaust and the time to reach the pressure; a2) a target data acquisition process to acquire the target data; and a3) a reference opening determination process, After the steps a1) and a2), the reference opening degree is determined based on the basic data and the target data.

本申請的第19發明是第18發明的減壓乾燥方法,其中,所述工序a3)包括:a31)從所述基礎資料中,針對每一個所述閥開度,參照到達所述處理期間的初始壓力值的所述到達時間即第1時間、及到達所述目標壓力值的所述到達時間即第2時間的工序;a32)算出所述第2時間與所述第1時間的差分的工序;a33)基於所述差分與所述目標到達時間一致或近似的所述閥開度,決定所述基準開度的工序。The nineteenth invention of the present application is the reduced-pressure drying method of the eighteenth invention, wherein the step a3) includes: a31) from the basic data, for each of the valve opening degrees, reference is made to A process of calculating the first time of the initial pressure value as the first time and the time of reaching the target pressure value as the second time; a32) a process of calculating a difference between the second time and the first time A33) a step of determining the reference opening degree based on the valve opening degree in which the difference is the same as or similar to the target arrival time.

本申請的第20發明是第19發明的減壓乾燥方法,其中,在所述工序a33)中,在存在所述差分與所述目標到達時間一致的所述閥開度的情況下,將所述差分與所述目標到達時間一致的所述閥開度決定為所述基準開度,在不存在所述差分與所述目標到達時間一致的所述閥開度的情況下,將所述差分大於所述目標到達時間且所述差分最近似於所述目標到達時間的所述閥開度決定為所述基準開度。 [發明的效果]The twentieth invention of the present application is the reduced-pressure drying method according to the nineteenth invention, wherein, in the step a33), when there is the valve opening degree in which the difference is consistent with the target arrival time, The valve opening degree in which the difference coincides with the target arrival time is determined as the reference opening degree, and in the case where the valve opening degree in which the difference coincides with the target arrival time does not exist, the difference is The valve opening degree which is greater than the target arrival time and whose difference is closest to the target arrival time is determined as the reference opening degree. [Effect of the invention]

根據本申請的第1發明至第20發明,將各處理期間的起點的閥開度設定為基準開度並且對閥開度進行反饋控制。並且,在進行使閥開度大於基準開度的控制的第1狀態下,根據目標壓力值或測量壓力值對比例控制係數進行變更。由此,能夠以與期望的減壓速度接近的減壓速度來進行減壓處理。According to the first invention to the twentieth invention of the present application, the valve opening degree at the starting point of each processing period is set as the reference opening degree, and the valve opening degree is feedback-controlled. Then, in the first state in which the valve opening degree is controlled to be larger than the reference opening degree, the proportional control coefficient is changed based on the target pressure value or the measured pressure value. Accordingly, the decompression process can be performed at a decompression speed close to a desired decompression speed.

尤其是根據本申請的第2發明至第4發明以及第13發明至第15發明,在大氣壓附近的比較大的壓力區域中,減小第1狀態下的反饋控制的權重。由此,可抑制振盪問題的產生。另一方面,在比較小的壓力區域中,考慮溶媒的蒸發而加大第1狀態下的反饋控制的權重。由此,可效率良好地抑制因溶媒的蒸發引起的壓力的上升。因此,能夠以與期望的減壓速度更接近的減壓速度來進行減壓處理。In particular, according to the second to fourth inventions and the thirteenth to fifteenth inventions of the present application, the weight of the feedback control in the first state is reduced in a relatively large pressure region near the atmospheric pressure. This can suppress the occurrence of oscillation problems. On the other hand, in a relatively small pressure region, the weight of the feedback control in the first state is increased in consideration of evaporation of the solvent. This makes it possible to efficiently suppress a pressure increase due to evaporation of the solvent. Therefore, the pressure reduction process can be performed at a pressure reduction speed closer to the desired pressure reduction speed.

尤其是根據本申請的第7發明至第9發明以及第18發明至第20發明,可獲得更恰當的基準開度。因此,能夠以與期望的減壓速度更接近的減壓速度來進行減壓處理。In particular, according to the seventh invention to the ninth invention and the eighteenth invention to the twentieth invention of the present application, a more appropriate reference opening degree can be obtained. Therefore, the pressure reduction process can be performed at a pressure reduction speed closer to the desired pressure reduction speed.

以下,參照圖示對本發明的實施方式進行說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<1.第1實施方式> <1-1.基板處理裝置的構成> 圖1是表示具有第1實施方式的減壓乾燥裝置1的基板處理裝置9的構成的概略圖。本實施方式的基板處理裝置9是對矩形狀的液晶顯示裝置用玻璃基板G(以下,稱為基板G)進行抗蝕劑液的塗布、曝光及曝光後的顯影的裝置。另外,基板G的形成並不限於矩形狀。<1. First embodiment> <1-1. Configuration of Substrate Processing Apparatus> FIG. 1 is a schematic diagram showing a configuration of a substrate processing apparatus 9 including a reduced-pressure drying apparatus 1 according to a first embodiment. The substrate processing apparatus 9 according to the present embodiment is an apparatus for applying, exposing, and developing a resist liquid to a rectangular glass substrate G for a liquid crystal display device (hereinafter, referred to as a substrate G). The formation of the substrate G is not limited to a rectangular shape.

基板處理裝置9具有搬入部90、清洗部91、脫水烘烤(dehydration bake)部92、塗布部93、作為減壓乾燥部的減壓乾燥裝置1、預烘烤(pre-bake)部94、曝光部95、顯影部96、漂洗部97、後烘烤(post-bake)部98及搬出部99作為多個處理部。基板處理裝置9的各處理部按照上述順序彼此鄰接配置。基板G通過搬運機構(未圖示)如虛線箭頭所示依照處理的進展並按照上述順序被搬運至各處理部。The substrate processing apparatus 9 includes a carry-in section 90, a cleaning section 91, a dehydration bake section 92, a coating section 93, a reduced-pressure drying device as a reduced-pressure drying section 1, a pre-bake section 94, The exposure section 95, the developing section 96, the rinsing section 97, the post-bake section 98, and the carry-out section 99 serve as a plurality of processing sections. The processing sections of the substrate processing apparatus 9 are arranged adjacent to each other in the order described above. The substrate G is conveyed to each processing unit by a conveyance mechanism (not shown) as indicated by a dotted arrow in accordance with the progress of processing and in the above-mentioned order.

搬入部90將要在基板處理裝置9中進行處理的基板G搬入至基板處理裝置9內。清洗部91對搬入至搬入部90的基板G進行清洗,以微細的顆粒為首,去除有機污染或金屬污染、油脂、自然氧化膜等。脫水烘烤部92對基板G進行加熱,並使在清洗部91中附著在基板G上的清洗液氣化,由此使基板G乾燥。The carry-in unit 90 carries the substrate G to be processed in the substrate processing apparatus 9 into the substrate processing apparatus 9. The cleaning section 91 cleans the substrate G carried into the carrying section 90, and removes organic pollution, metal pollution, grease, natural oxide films, and the like, including fine particles. The dehydration baking section 92 heats the substrate G and vaporizes the cleaning liquid adhered to the substrate G in the cleaning section 91, thereby drying the substrate G.

塗布部93針對由脫水烘烤部92進行乾燥處理後的基板G,在其表面塗布處理液。本實施方式的塗布部93是在基板G的表面塗布具有感光性的光致抗蝕劑液(以下,簡稱為抗蝕劑液)。並且,減壓乾燥裝置1通過減壓使塗布至基板G的表面的所述抗蝕劑液的溶媒蒸發,由此使基板G乾燥。預烘烤部94是對在減壓乾燥裝置1中實施了減壓乾燥處理的基板G進行加熱,使基板G表面的抗蝕劑成分固化的加熱處理部。由此,在基板G的表面形成處理液的薄膜即抗蝕劑膜。The coating section 93 applies a processing liquid to the surface of the substrate G after the drying process is performed by the dehydration baking section 92. The coating unit 93 of the present embodiment applies a photosensitive photoresist liquid (hereinafter, simply referred to as a resist liquid) to the surface of the substrate G. In addition, the reduced-pressure drying device 1 evaporates the solvent of the resist solution applied to the surface of the substrate G under reduced pressure, thereby drying the substrate G. The pre-baking unit 94 is a heat-treating unit that heats the substrate G that has been subjected to the reduced-pressure drying treatment in the reduced-pressure drying device 1 to cure the resist component on the surface of the substrate G. Thereby, a resist film, which is a thin film of the processing liquid, is formed on the surface of the substrate G.

其次,曝光部95對形成有抗蝕劑膜的基板G的表面進行曝光處理。曝光部95透過描繪有電路圖案的掩膜來照射遠紫外線,將圖案轉印至抗蝕劑膜。顯影部96將在曝光部95中曝光有圖案的基板G浸泡至顯影液中來進行顯影處理。Next, the exposure unit 95 performs an exposure process on the surface of the substrate G on which the resist film is formed. The exposure unit 95 irradiates far ultraviolet rays through a mask on which a circuit pattern is drawn, and transfers the pattern to a resist film. The developing section 96 immerses the substrate G on which the pattern is exposed in the exposure section 95 into a developing solution to perform a developing process.

漂洗部97利用漂洗液對在顯影部96中經顯影處理的基板G進行沖洗。由此,停止顯影處理的進展。後烘烤部98對基板G進行加熱,使在漂洗部97中附著在基板G上的漂洗液氣化,由此使基板G乾燥。在基板處理裝置9的各處理部中實施了處理的基板G被搬運至搬出部99。並且,從搬出部99將基板G搬出至基板處理裝置9的外部。The rinsing section 97 rinses the substrate G subjected to the development processing in the developing section 96 with a rinsing liquid. Thereby, the progress of the development process is stopped. The post-baking unit 98 heats the substrate G and vaporizes the rinsing liquid adhered to the substrate G in the rinsing unit 97 to dry the substrate G. The substrate G that has been processed in each processing unit of the substrate processing apparatus 9 is transferred to the unloading unit 99. Then, the substrate G is carried out from the carrying-out section 99 to the outside of the substrate processing apparatus 9.

另外,本實施方式的基板處理裝置9具有曝光部95,但在本發明的基板處理裝置中也可以省略曝光部。此時,只要將基板處理裝置與單獨的曝光裝置組合使用即可。Although the substrate processing apparatus 9 according to the present embodiment includes an exposure unit 95, the substrate processing apparatus according to the present invention may omit the exposure unit. In this case, the substrate processing apparatus may be used in combination with a separate exposure apparatus.

<1-2.減壓乾燥裝置的構成> 圖2是表示本實施方式的減壓乾燥裝置1的構成的概略圖。圖3是表示減壓乾燥裝置1的控制系統的構成的框圖。減壓乾燥裝置1如上所述,是對塗布有抗蝕劑液等處理液的基板G進行減壓乾燥的裝置。如圖2所示,減壓乾燥裝置1具有腔室20、排氣泵30、配管部40、惰性氣體供給部50、控制部60及輸入部70。<1-2. Configuration of the reduced-pressure drying apparatus> FIG. 2 is a schematic diagram showing the configuration of the reduced-pressure drying apparatus 1 according to the present embodiment. FIG. 3 is a block diagram showing a configuration of a control system of the reduced-pressure drying device 1. As described above, the reduced-pressure drying device 1 is a device for drying the substrate G coated with a processing liquid such as a resist liquid under reduced pressure. As shown in FIG. 2, the reduced-pressure drying apparatus 1 includes a chamber 20, an exhaust pump 30, a piping unit 40, an inert gas supply unit 50, a control unit 60, and an input unit 70.

腔室20具有基座(base)部21及蓋部22。基座部21為大致水平擴展的板狀的構件。蓋部22是對基座部21的上方進行覆蓋的有蓋筒狀的構件。在包括基座部21及蓋部22的框體的內部收容基板G。而且,在蓋部22的下端部具有密封材221。由此,阻斷基座部21與蓋部22的接觸部位處的腔室20的內部與外部的連通。The chamber 20 includes a base portion 21 and a lid portion 22. The base portion 21 is a plate-shaped member that extends substantially horizontally. The lid portion 22 is a covered cylindrical member that covers the upper portion of the base portion 21. The substrate G is housed inside the housing including the base portion 21 and the lid portion 22. A sealing material 221 is provided at a lower end portion of the lid portion 22. As a result, communication between the inside and outside of the cavity 20 at the contact portion between the base portion 21 and the lid portion 22 is blocked.

在基座部21設有排氣口23。由此,可將腔室20內的氣體經由排氣口23而排出至腔室20外。在本實施方式的腔室20設有四個排氣口23。在圖2中僅圖示了四個排氣口23中的兩個排氣口23。另外,設於腔室20的排氣口23的數量既可以為一個~三個,也可以為五個以上。An exhaust port 23 is provided in the base portion 21. Thereby, the gas in the chamber 20 can be discharged to the outside of the chamber 20 through the exhaust port 23. The chamber 20 of the present embodiment is provided with four exhaust ports 23. Only two of the four exhaust ports 23 are illustrated in FIG. 2. The number of the exhaust ports 23 provided in the chamber 20 may be one to three, or five or more.

在腔室20的內部設有支撐機構24。支撐機構24具有支撐板241、多個支撐銷242及支撐柱243。支撐板241為大致水平擴展的板狀的構件。支撐板241對多個支撐銷242進行保持。多個支撐銷242在其上端載置基板G,從背面對基板G進行支撐。支撐銷242分別從支撐板241向上方延伸。多個支撐銷242在水平方向上分散配置。由此,基板G得到穩定的支撐。支撐柱243是對支撐板241進行支撐的構件。支撐柱243的下端部固定於基座部21。A support mechanism 24 is provided inside the chamber 20. The support mechanism 24 includes a support plate 241, a plurality of support pins 242, and a support post 243. The support plate 241 is a plate-shaped member that extends substantially horizontally. The support plate 241 holds a plurality of support pins 242. The plurality of support pins 242 place the substrate G on the upper end thereof, and support the substrate G from the rear surface. The support pins 242 each extend upward from the support plate 241. The plurality of support pins 242 are dispersedly arranged in the horizontal direction. Thereby, the substrate G is stably supported. The support post 243 is a member that supports the support plate 241. The lower end portion of the support post 243 is fixed to the base portion 21.

而且,在腔室20設有對腔室20內的壓力進行測定的壓力傳感器25。即,壓力傳感器25是對腔室20內的壓力進行測量的測量部。本實施方式的壓力傳感器25設於基座部21,但也可以將壓力傳感器設于配管部40的後述單獨配管41或第1共有配管42。The chamber 20 is provided with a pressure sensor 25 that measures the pressure in the chamber 20. That is, the pressure sensor 25 is a measurement unit that measures the pressure in the chamber 20. The pressure sensor 25 of the present embodiment is provided in the base portion 21, but the pressure sensor may be provided in a separate pipe 41 or a first common pipe 42 described later of the piping unit 40.

排氣泵30是將腔室20內的氣體予以排出的泵。排氣泵30經由配管部40而與腔室20的排氣口23連接。由此,當排氣泵30驅動時,腔室20內的氣體經由排氣口23及配管部40而被排出至減壓乾燥裝置1的外部。所述排氣泵30是通過以固定的輸出進行驅動來對腔室20內進行減壓排氣的減壓排氣部。從腔室20的排氣速度的調節是由後述閥45來進行。The exhaust pump 30 is a pump that exhausts the gas in the chamber 20. The exhaust pump 30 is connected to the exhaust port 23 of the chamber 20 via a piping portion 40. Accordingly, when the exhaust pump 30 is driven, the gas in the chamber 20 is discharged to the outside of the reduced-pressure drying device 1 through the exhaust port 23 and the piping portion 40. The exhaust pump 30 is a reduced-pressure exhaust unit that performs reduced-pressure exhaust in the chamber 20 by driving at a fixed output. The exhaust speed from the chamber 20 is adjusted by a valve 45 described later.

配管部40具有四個單獨配管41、第1共有配管42、第2共有配管43及兩個分支配管44。單獨配管41分別將上游側的端部連接於排氣口23,將下游側的端部連接於第1共有配管42。另外,在本實施方式中,其中兩個單獨配管41的下游側的端部連接於第1共有配管42的其中一端,另兩個單獨配管41的下游側的端部連接於第1共有配管42的另一端。The piping section 40 includes four individual pipes 41, a first common pipe 42, a second common pipe 43, and two branch pipes 44. The individual pipes 41 each connect an upstream end portion to the exhaust port 23 and a downstream end portion to the first common pipe 42. In the present embodiment, the downstream ends of the two separate pipes 41 are connected to one end of the first common pipe 42, and the downstream ends of the other two separate pipes 41 are connected to the first common pipe 42. The other end.

第2共有配管43的下游側的端部連接於排氣泵30。兩個分支配管44分別將上游側的端部連接於第1共有配管42的管道中途,將下游側的端部連接於第2共有配管43的上游側的端部。由此,腔室20的內部與排氣泵30經由四個排氣口23、四個單獨配管41、第1共有配管42、兩個分支配管44及第2共有配管43而連通。An end portion on the downstream side of the second common pipe 43 is connected to the exhaust pump 30. The two branch pipes 44 respectively connect the upstream end portion to the pipe of the first common pipe 42 and the downstream end portion to the upstream end portion of the second common pipe 43. Thereby, the inside of the chamber 20 and the exhaust pump 30 communicate with each other via the four exhaust ports 23, the four individual pipes 41, the first common pipe 42, the two branch pipes 44, and the second common pipe 43.

在分支配管44上分別插入有閥45。閥45配置於腔室20與排氣泵30之間,對減壓排氣的流量進行調節。本實施方式的閥45是通過改變閥體的角度來調節閥開度的蝶閥(butterfly valve)。另外,在本實施方式中,對閥45使用了蝶閥,但只要是可通過閥開度對減壓排氣的流量進行調節的閥,則也可以使用球閥(globe valve)(球形閥)或其他閥。Valves 45 are respectively inserted into the branch pipes 44. The valve 45 is disposed between the chamber 20 and the exhaust pump 30 and adjusts the flow rate of the reduced-pressure exhaust gas. The valve 45 of this embodiment is a butterfly valve that adjusts the valve opening degree by changing the angle of the valve body. In addition, in this embodiment, a butterfly valve is used for the valve 45, but a globe valve (spherical valve) or other valve may be used as long as the valve can adjust the flow of the reduced-pressure exhaust gas by the valve opening degree. valve.

而且,在本實施方式中,兩個閥45是以相同的閥開度進行動作。即,當控制部60將閥45的閥開度設定為20°時,兩個閥45的閥開度均被調節為20°。In the present embodiment, the two valves 45 are operated at the same valve opening degree. That is, when the control unit 60 sets the valve opening degree of the valve 45 to 20 °, the valve opening degrees of both the valves 45 are adjusted to 20 °.

惰性氣體供給部50對腔室20內供給惰性氣體。惰性氣體供給部50具有惰性氣體供給配管51及開閉閥52。惰性氣體供給配管51的其中一端連接於腔室20的內部空間,另一端連接於惰性氣體供給源53。本實施方式的惰性氣體供給源53供給乾燥的氮氣作為惰性氣體。本實施方式的惰性氣體供給源53是配置在減壓乾燥裝置1的裝置外的工廠公用設施(utility)。另外,減壓乾燥裝置1也可以具有惰性氣體供給源53。The inert gas supply unit 50 supplies an inert gas into the chamber 20. The inert gas supply unit 50 includes an inert gas supply pipe 51 and an on-off valve 52. One end of the inert gas supply pipe 51 is connected to the internal space of the chamber 20, and the other end is connected to the inert gas supply source 53. The inert gas supply source 53 of this embodiment supplies dry nitrogen as an inert gas. The inert gas supply source 53 according to the present embodiment is a utility of the factory arranged outside the apparatus of the reduced-pressure drying apparatus 1. The reduced-pressure drying device 1 may include an inert gas supply source 53.

開閉閥52被插入至惰性氣體供給配管51。因此,當開閉閥52開放時,從惰性氣體供給源53向腔室20內供給惰性氣體。而且,當開閉閥52閉鎖時,停止從惰性氣體供給源53向腔室20供給惰性氣體。The on-off valve 52 is inserted into the inert gas supply pipe 51. Therefore, when the on-off valve 52 is opened, the inert gas is supplied from the inert gas supply source 53 into the chamber 20. When the on-off valve 52 is closed, the supply of the inert gas from the inert gas supply source 53 to the chamber 20 is stopped.

另外,惰性氣體供給部50也可以供給氬氣等其他乾燥的惰性氣體來代替氮氣。The inert gas supply unit 50 may supply other dry inert gas such as argon instead of nitrogen.

控制部60對減壓乾燥裝置1的各部進行控制。如圖2中概念性所示,控制部60包括具有中央處理單元(Central Processing Unit,CPU)等運算處理部601、隨機存取存儲器(Random Access Memory,RAM)等存儲器602及硬盤驅動器等存儲部603的計算機。而且,控制部60分別與壓力傳感器25、排氣泵30、兩個閥45、開閉閥52及輸入部70電性連接。The control unit 60 controls each unit of the reduced-pressure drying apparatus 1. As shown conceptually in FIG. 2, the control unit 60 includes an arithmetic processing unit 601 such as a central processing unit (CPU), a memory 602 such as a random access memory (RAM), and a storage unit such as a hard disk drive. 603 computers. The control unit 60 is electrically connected to the pressure sensor 25, the exhaust pump 30, the two valves 45, the on-off valve 52, and the input unit 70, respectively.

控制部60將存儲部603中所存儲的計算機程序或資料臨時讀出至存儲器602中,並由運算處理部601基於所述計算機程序及資料進行運算處理,由此對減壓乾燥裝置1內的各部的動作進行控制。由此,執行減壓乾燥裝置1中的減壓乾燥處理。另外,控制部60既可以僅對減壓乾燥裝置1進行控制,也可以對基板處理裝置9整體進行控制。The control unit 60 temporarily reads the computer program or data stored in the storage unit 603 into the memory 602, and the arithmetic processing unit 601 performs arithmetic processing based on the computer program and data, and thus the The operation of each part is controlled. Thereby, the reduced-pressure drying process in the reduced-pressure drying apparatus 1 is performed. The control unit 60 may control only the reduced-pressure drying apparatus 1 or the entire substrate processing apparatus 9.

如圖3所示,控制部60具有目標資料獲取部61、基礎資料獲取部62、基準開度決定部63及動作控制部64作為由CPU進行程序處理而以軟件形式實現的功能處理部。As shown in FIG. 3, the control unit 60 includes a target data acquisition unit 61, a basic data acquisition unit 62, a reference opening degree determination unit 63, and an operation control unit 64 as function processing units that are implemented by software by program processing by the CPU.

目標資料獲取部61獲取包含每個預先設定的處理期間的初始壓力值、目標壓力值及目標到達時間的目標資料S61。在本實施方式中,從輸入部70對目標資料獲取部61輸入配方資料(recipe data)S70。配方資料S70是表示進行減壓乾燥處理時應作為目標的壓力變化的資料。目標資料獲取部61基於配方資料S70對一個或連續的多個處理期間分別設定包含初始壓力值、目標壓力值及目標到達時間的目標資料S61。The target data acquisition unit 61 acquires target data S61 including an initial pressure value, a target pressure value, and a target arrival time for each preset processing period. In the present embodiment, recipe data S70 is input from the input unit 70 to the target data acquisition unit 61. The recipe data S70 is data indicating a pressure change to be targeted when performing a reduced-pressure drying process. The target data acquisition unit 61 sets target data S61 including an initial pressure value, a target pressure value, and a target arrival time for one or consecutive multiple processing periods based on the recipe data S70.

基礎資料獲取部62通過執行後述學習工序(步驟ST10)而獲取基礎資料S62。基礎資料S62是針對規定的多個閥開度(以下,稱為“學習開度”)中的每一個,表示減壓排氣引起的腔室20內的壓力與到達所述壓力的到達時間的關係的腔室20固有的資料。The basic data acquisition unit 62 acquires basic data S62 by executing a learning process (step ST10) described later. The basic data S62 indicates the pressure in the chamber 20 caused by the reduced-pressure exhaust and the time to reach the pressure for each of a plurality of predetermined valve openings (hereinafter referred to as "learning openings"). Relevant information specific to the chamber 20.

基準開度決定部63基於所述目標資料S61及基礎資料S62來決定基準開度S63。基準開度S63是各處理期間的起點的閥開度(初始閥開度)。具體來說,基準開度決定部63針對各處理期間,從基礎資料S62中,參照每個學習開度下的從大氣壓起到達初始壓力值的到達時間即第1時間與從大氣壓起到達目標壓力值的到達時間即第2時間。並且,算出第2時間與第1時間的差分。之後,基於所述差分與目標到達時間一致或近似的學習開度來決定基準開度S63。The reference opening degree determination unit 63 determines a reference opening degree S63 based on the target data S61 and the basic data S62. The reference opening degree S63 is the valve opening degree (initial valve opening degree) at the start of each processing period. Specifically, for each processing period, the reference opening degree determination unit 63 refers to the first time and the arrival time from the atmospheric pressure to the initial pressure value from the basic data S62 for each learning opening degree to the target pressure from the atmospheric pressure. The arrival time of the value is the second time. Then, the difference between the second time and the first time is calculated. After that, the reference opening degree S63 is determined based on the learning opening degree in which the difference coincides with or is similar to the target arrival time.

動作控制部64對排氣泵30、閥45及開閉閥52各自的動作進行控制。在執行減壓乾燥處理時,動作控制部64基於多個處理期間的每一個的目標資料S61來控制閥45的閥開度。The operation control unit 64 controls operations of the exhaust pump 30, the valve 45, and the on-off valve 52. When the reduced-pressure drying process is performed, the operation control unit 64 controls the valve opening degree of the valve 45 based on the target data S61 for each of a plurality of processing periods.

而且,動作控制部64包括初始開度設定部641及反饋控制部642。初始開度設定部641在各處理期間的起點,將閥45的閥開度設定為基準開度S63。反饋控制部642基於壓力傳感器25所測量的測量壓力值S25來進行包含比例控制的反饋控制。反饋控制部642在進行使閥45的閥開度大於基準開度S63的控制時(以下,稱為“第1狀態”),根據目標壓力值或測量壓力值S25來變更比例控制係數。關於反饋控制部642的具體的行為將後述。The operation control unit 64 includes an initial opening degree setting unit 641 and a feedback control unit 642. The initial opening degree setting unit 641 sets the valve opening degree of the valve 45 to the reference opening degree S63 at the beginning of each processing period. The feedback control unit 642 performs feedback control including proportional control based on the measured pressure value S25 measured by the pressure sensor 25. The feedback control unit 642 changes the proportional control coefficient based on the target pressure value or the measured pressure value S25 when performing control to make the valve opening degree of the valve 45 larger than the reference opening degree S63 (hereinafter referred to as the “first state”). The specific behavior of the feedback control unit 642 will be described later.

輸入部70是用於由用戶輸入配方資料S70的輸入部件。本實施方式的輸入部70是設於基板處理裝置9的輸入面板。但是,輸入部70也可以為其他形態的輸入部件(例如,鍵盤或鼠標等)。當將配方資料S70輸入至輸入部70時,所述配方資料S70被收集至控制部60。The input unit 70 is an input means for inputting the recipe data S70 by a user. The input unit 70 according to this embodiment is an input panel provided on the substrate processing apparatus 9. However, the input unit 70 may be an input device in another form (for example, a keyboard or a mouse). When the recipe data S70 is input to the input section 70, the recipe data S70 is collected to the control section 60.

如上所述,在本實施方式中,在說明控制部60進行的減壓乾燥處理的控制動作時,使用以下用語。各用語以如下所示的意思來使用。 ・配方資料:表示目標壓力變化的資料 ・處理期間:為了壓力控制而劃分的期間 ・初始壓力值:各處理期間的起點的壓力值 在本實施方式中,是獲取目標資料時,配方資料中的各處理期間的起點的壓力值 在減壓乾燥處理過程中,可將測量壓力值替換成初始壓力值 ・目標壓力值 :各處理期間的目標終點的壓力值 在本實施方式中,是配方資料中的各處理期間的終點的壓力值 ・目標到達時間:各處理期間的長度 在本實施方式中,包含在配方資料中 ・目標資料:每個處理期間的初始壓力值、目標壓力值及目標到達時間 在本實施方式中,是從配方資料中獲取 ・基礎資料:通過事前的學習處理而針對多個閥開度(學習開度)中的每一個所獲取的壓力的時間序列資料 表示腔室固有的減壓狀態的資料 ・學習開度:在事前的學習處理中獲取基礎資料的閥開度 ・基準開度 :各處理期間的起點的閥開度 在本實施方式中,由事前的學習處理決定As described above, in the present embodiment, when the control operation of the reduced-pressure drying process performed by the control unit 60 is described, the following terms are used. Each term is used in the following meaning.・ Recipe data: Data indicating the change in target pressure. ・ Processing period: The period divided for pressure control. ・ Initial pressure value: The pressure value at the beginning of each processing period. In this embodiment, when the target data is obtained, the The pressure value at the starting point of each processing period can be replaced with the initial pressure value and the target pressure value during the reduced-pressure drying process. The pressure value at the target end point in each processing period is in the recipe data in this embodiment. Pressure value at the end of each processing period and target arrival time: The length of each processing period is included in the recipe data in this embodiment. Target data: the initial pressure value, target pressure value, and target arrival time for each processing period In this embodiment, it is obtained from the recipe data. Basic data: The time-series data of the pressure obtained for each of the plurality of valve openings (learning openings) through prior learning processing indicates the peculiarity of the chamber. Decompression state data / learning opening degree: Valve opening to acquire basic data during prior learning processing Degree • Reference opening degree: Valve opening degree at the start of each processing period. In this embodiment, it is determined by prior learning processing.

<1-3.減壓乾燥處理的流程> 繼而,參照圖4~圖6對所述減壓乾燥裝置1的減壓乾燥處理進行說明。圖4是表示減壓乾燥裝置1的減壓乾燥處理的流程的流程圖。圖5是在學習工序中獲取的表示減壓排氣時間與測量壓力值S25的關係的波形(基礎資料)的一例的圖表。圖6是表示後述目標減壓波形R的一例的圖。<1-3. Flow of reduced-pressure drying process> Next, the reduced-pressure drying process of the reduced-pressure drying apparatus 1 will be described with reference to FIGS. 4 to 6. FIG. 4 is a flowchart showing a flow of a reduced-pressure drying process of the reduced-pressure drying device 1. FIG. 5 is a graph showing an example of a waveform (basic data) showing the relationship between the decompression exhaust time and the measured pressure value S25 obtained in the learning process. FIG. 6 is a diagram showing an example of a target decompression waveform R described later.

如圖4所示,減壓乾燥裝置1首先進行學習工序(步驟ST10)。在學習工序中,動作控制部64在腔室20的內部未收容基板G的狀態下,針對多個學習開度的每一個,進行腔室20內的減壓排氣。並且,基礎資料獲取部62通過監視腔室20內的壓力變化而獲取基礎資料S62。As shown in FIG. 4, the reduced-pressure drying apparatus 1 first performs a learning process (step ST10). In the learning process, the operation control unit 64 performs decompressed exhaust in the chamber 20 for each of a plurality of learning openings in a state where the substrate G is not housed in the chamber 20. And the basic data acquisition part 62 acquires basic data S62 by monitoring the pressure change in the chamber 20.

在步驟ST10的學習工序中,具體來說,在通過大氣開放或由惰性氣體供給部50供給惰性氣體而使腔室20內的壓力成為大氣壓即100,000 Pa後,使排氣泵30驅動並且以規定的學習開度開放閥45。並且,開放閥45後直至經過規定的時間,通過壓力傳感器25對腔室20內的壓力變化進行測量。並且,基礎資料獲取部62對壓力傳感器25所測量的測量壓力值S25的變化進行監視,並記錄腔室20內的壓力與到達所述壓力的到達時間的關係。通過對每個預先決定的學習開度來進行所述壓力測量,基礎資料獲取部62例如獲取圖5所示那樣的基礎資料S62。基礎資料獲取部62所獲取的基礎資料S62被保持在存儲部603內。In the learning process of step ST10, specifically, after the atmosphere is opened or the inert gas is supplied from the inert gas supply unit 50 to make the pressure in the chamber 20 to be atmospheric pressure, that is, 100,000 Pa, the exhaust pump 30 is driven to perform the predetermined Learning opening degree opening valve 45. Then, after the valve 45 is opened until a predetermined time elapses, the pressure change in the chamber 20 is measured by the pressure sensor 25. In addition, the basic data acquisition unit 62 monitors changes in the measured pressure value S25 measured by the pressure sensor 25 and records the relationship between the pressure in the chamber 20 and the arrival time to the pressure. By performing the pressure measurement for each predetermined learning opening degree, the basic data acquisition unit 62 acquires basic data S62 as shown in FIG. 5, for example. The basic data S62 acquired by the basic data acquisition unit 62 is held in the storage unit 603.

在本實施方式中,多個學習開度是以在3°~10°間為0.5°間隔,在10°~30°間為1°間隔,並且在30°~90°間為10°間隔的方式設定。即,以隨著學習開度變大而間隔變大的方式設定學習開度。具體來說,學習開度為3.0°、3.5°、4.0°、4.5°、5.0°、5.5°、6.0°、6.5°、7.0°、7.5°、8.0°、8.5°、9.0°、9.5°、10°、11°、12°、13°、14°、15°、16°、17°、18°、19°、20°、21°、22°、23°、24°、25°、26°、27°、28°、29°、30°、40°、50°、60°、70°、80°及90°。另外,在圖5中,對學習開度為40°、50°、70°及80°的波形省略了圖示。In this embodiment, the plurality of learning openings are spaced at intervals of 0.5 ° between 3 ° and 10 °, at intervals of 1 ° between 10 ° and 30 °, and at intervals of 10 ° between 30 ° and 90 °. Mode setting. That is, the learning opening degree is set so that the interval becomes larger as the learning opening degree becomes larger. Specifically, the learning opening degrees are 3.0 °, 3.5 °, 4.0 °, 4.5 °, 5.0 °, 5.5 °, 6.0 °, 6.5 °, 7.0 °, 7.5 °, 8.0 °, 8.5 °, 9.0 °, 9.5 °, 10 °, 11 °, 12 °, 13 °, 14 °, 15 °, 16 °, 17 °, 18 °, 19 °, 20 °, 21 °, 22 °, 23 °, 24 °, 25 °, 26 ° , 27 °, 28 °, 29 °, 30 °, 40 °, 50 °, 60 °, 70 °, 80 ° and 90 °. In addition, in FIG. 5, the waveforms of the learning openings of 40 °, 50 °, 70 °, and 80 ° are omitted.

基礎資料S62既可以為每當測量壓力值S25到達多個規定的值時對到達時間進行記錄而得的資料,也可以為每隔規定的時間間隔對測量壓力值S25進行記錄而得的資料。The basic data S62 may be data obtained by recording the arrival time each time the measured pressure value S25 reaches a plurality of predetermined values, or may be data obtained by recording the measured pressure value S25 at predetermined time intervals.

步驟ST10的學習工序也可以在每次進行步驟ST20~步驟ST80為止的減壓乾燥處理時進行。而且,也可以在進行學習工序之後進行下一學習工序之前的期間多次進行步驟ST20~步驟ST80為止的減壓乾燥處理。The learning step of step ST10 may be performed each time the reduced-pressure drying process up to step ST20 to step ST80 is performed. Further, the reduced-pressure drying process up to steps ST20 to ST80 may be performed a plurality of times after the learning process is performed and before the next learning process is performed.

在本實施方式中,在進行步驟ST10的學習工序之後,推進基板G的減壓乾燥處理。首先,將配方資料S70經由輸入部70而輸入至目標資料獲取部61。具體來說,配方資料S70具有每個處理期間的目標壓力值及目標到達時間的信息。將包括配方資料S70的目標減壓波形R的一例示於圖6。目標資料獲取部61基於輸入的配方資料S70,針對各處理期間T1、T2、T3分別獲取包括初始壓力值、目標壓力值及目標到達時間的目標資料S61(步驟ST20)。In this embodiment, after the learning step of step ST10 is performed, the reduced-pressure drying process of the substrate G is advanced. First, the recipe data S70 is input to the target data acquisition unit 61 via the input unit 70. Specifically, the recipe data S70 has information on a target pressure value and a target arrival time during each processing period. An example of the target decompression waveform R including the recipe data S70 is shown in FIG. 6. The target data acquisition unit 61 acquires target data S61 including the initial pressure value, the target pressure value, and the target arrival time for each processing period T1, T2, and T3 based on the input recipe data S70 (step ST20).

例如,為了達成圖6的示例的目標減壓波形R,目標資料獲取部61設第1處理期間T1的初始壓力值為100,000 Pa、目標壓力值為10,000 Pa、目標到達時間為20 sec(秒)。而且,目標資料獲取部61設第2處理期間T2的初始壓力值為10,000 Pa、目標壓力值為20 Pa、目標到達時間為20 sec。並且,目標資料獲取部61將第2處理期間T2結束後的第3處理期間T3設定為通過惰性氣體置換(purge)將腔室20內的壓力恢復至大氣壓的置換模式(purge mode)。如圖6的示例的目標減壓波形R所示,通過階段性地進行減壓,塗布至基板G的表面的處理液的突沸得到抑制。For example, in order to achieve the target decompression waveform R of the example of FIG. 6, the target data acquisition unit 61 sets the initial pressure value of the first processing period T1 to 100,000 Pa, the target pressure value to 10,000 Pa, and the target arrival time to 20 sec (seconds). . The target data acquisition unit 61 sets the initial pressure value of the second processing period T2 to 10,000 Pa, the target pressure value to 20 Pa, and the target arrival time to 20 sec. Then, the target data acquisition unit 61 sets the third processing period T3 after the end of the second processing period T2 to a purge mode in which the pressure in the chamber 20 is restored to atmospheric pressure by inert gas purge. As shown in the target decompression waveform R in the example of FIG. 6, by performing decompression stepwise, bumping of the processing liquid applied to the surface of the substrate G is suppressed.

其次,將基板G搬入至腔室20內(步驟ST30)。在步驟ST30中,在閉鎖了閥45及開閉閥52的狀態下,通過腔室開閉機構(未圖示)使腔室20的蓋部22上升。由此,開放腔室20。並且,將塗布有處理液(抗蝕劑液)的基板G搬入至腔室20內,並將其載置於支撐銷242上。之後,通過腔室開閉機構使蓋部22下降。由此,閉鎖腔室20,將基板G收容在腔室20內。Next, the substrate G is carried into the chamber 20 (step ST30). In step ST30, in a state where the valve 45 and the on-off valve 52 are closed, the lid 22 of the chamber 20 is raised by a chamber opening and closing mechanism (not shown). Thereby, the chamber 20 is opened. Then, the substrate G coated with the processing solution (resist solution) is carried into the chamber 20 and placed on the support pin 242. Thereafter, the lid portion 22 is lowered by the chamber opening and closing mechanism. Thereby, the chamber 20 is closed, and the substrate G is accommodated in the chamber 20.

在本實施方式中,是在步驟ST20的輸入工序之後進行步驟ST30的基板G的搬入工序,但也可以將步驟ST20與步驟ST30的順序反轉。In this embodiment, the substrate G carrying-in process of step ST30 is performed after the input process of step ST20, but the order of step ST20 and step ST30 may be reversed.

之後,基準開度決定部63基於目標資料S61及基礎資料S62,決定各處理期間的起點的閥45的開度即基準開度S63(步驟ST40)。Then, based on the target data S61 and the basic data S62, the reference opening degree determination unit 63 determines the reference opening degree S63, which is the opening degree of the valve 45 at the starting point of each processing period (step ST40).

在第一回的步驟ST40中,例如決定圖6的示例的目標減壓波形R的第1處理期間T1的基準開度S63。因此,首先,基準開度決定部63參照基礎資料S62。In step ST40 of the first round, for example, the reference opening degree S63 of the first processing period T1 of the target decompression waveform R in the example of FIG. 6 is determined. Therefore, first, the reference opening degree determination unit 63 refers to the basic data S62.

在第1處理期間T1,從初始狀態即100,000 Pa開始以20 sec減壓至目標壓力值10,000 Pa。基準開度決定部63參照基礎資料S62,針對各學習開度,算出從到達初始壓力值100,000 Pa的到達時間即第1時間減去到達目標壓力值10,000 Pa的到達時間即第2時間而得的差分。另外,此時,因學習工序的初始狀態為100,000 Pa,所以到達初始壓力值100,000 Pa的到達時間即第1時間為0 sec。因此,到達目標壓力值10,000 Pa的到達時間即第2時間與差分一致。In the first processing period T1, the pressure is reduced from the initial state of 100,000 Pa in 20 sec to a target pressure of 10,000 Pa. The reference opening degree determination unit 63 refers to the basic data S62 and calculates, for each learning opening degree, a value obtained by subtracting the second time from the first time that is the arrival time to reach the initial pressure value of 100,000 Pa, which is the second time. difference. At this time, since the initial state of the learning process is 100,000 Pa, the first time to reach the initial pressure value of 100,000 Pa, that is, the first time is 0 sec. Therefore, the second time, that is, the time to reach the target pressure value of 10,000 Pa, matches the difference.

基準開度決定部63基於基礎資料S62中差分與目標到達時間20 sec一致或近似的學習開度來決定基準開度S63。具體來說,本實施方式的基準開度決定部63在存在差分與目標到達時間一致的學習開度的情況下,將所述學習開度決定為基準開度S63。而且,基準開度決定部63在不存在差分與目標到達時間一致的學習開度的情況下,將差分大於目標到達時間且差分最近似於目標到達時間的學習開度決定為基準開度S63。The reference opening degree determination unit 63 determines the reference opening degree S63 based on the learning opening degree in which the difference and the target arrival time 20 sec in the basic data S62 coincide or are approximate. Specifically, the reference opening degree determination unit 63 of the present embodiment determines the learning opening degree as the reference opening degree S63 when there is a learning opening degree in which the difference coincides with the target arrival time. Further, the reference opening degree determination unit 63 determines the learning opening degree with a difference greater than the target arrival time and the difference closest to the target arrival time when there is no learning opening degree with which the difference coincides with the target arrival time, as the reference opening degree S63.

此處,假設將差分小於目標到達時間的學習開度設為基準開度S63,則腔室20內的壓力變得低於目標減壓波形R的可能性高。一旦腔室20內的壓力變得低於目標壓力值,則難以僅通過閥45的開閉控制來使腔室20內的壓力再度上升。因此,優選如本實施方式般將差分與目標到達時間一致或差分大於目標到達時間的學習開度設為基準開度S63。Here, assuming that the learning opening degree having a difference smaller than the target arrival time is set as the reference opening degree S63, there is a high possibility that the pressure in the chamber 20 becomes lower than the target decompression waveform R. Once the pressure in the chamber 20 becomes lower than the target pressure value, it is difficult to raise the pressure in the chamber 20 again only by the opening and closing control of the valve 45. Therefore, it is preferable to set the learning opening degree in which the difference matches the target arrival time or the difference is larger than the target arrival time as the reference opening degree S63 as in this embodiment.

例如,在圖5的基礎資料S62中,相對於目標到達時間20 sec,學習開度6.5°的第2時間及差分為20.2 sec,學習開度7.0°的第2時間及差分為17.9 sec。所以,基準開度決定部63將第1處理期間T1的基準開度S63決定為6.5°。For example, in the basic data S62 in FIG. 5, the second time and difference of the learning opening degree of 6.5 ° with respect to the target arrival time of 20 sec is 20.2 sec, and the second time and difference of the learning opening degree of 7.0 ° are 17.9 sec. Therefore, the reference opening degree determination unit 63 determines the reference opening degree S63 in the first processing period T1 to be 6.5 °.

另外,基準開度決定部63也可以基於差分近似於目標到達時間的兩個學習開度6.5°及7.0°來算出基準開度S63。此時,例如基於目標到達時間與各學習開度下的差分之差,對兩個學習開度進行加權,由此算出基準開度S63。In addition, the reference opening degree determination unit 63 may calculate the reference opening degree S63 based on two learning opening degrees 6.5 ° and 7.0 ° that are approximately similar to the target arrival time. At this time, for example, the reference opening degree S63 is calculated by weighting the two learning opening degrees based on the difference between the target arrival time and the difference at each learning opening degree.

繼而,基準開度決定部63決定第2處理期間T2的基準開度S63。在第2處理期間T2,從初始壓力值10,000 Pa開始以20 sec減壓至目標壓力值20 Pa。基準開度決定部63針對各學習開度,算出從到達初始壓力值10,000 Pa的到達時間即第1時間減去到達目標壓力值20 Pa的到達時間即第2時間而得的差分。並且,基準開度決定部63基於基礎資料S62中差分與目標到達時間20 sec一致或近似的學習開度來決定基準開度S63。The reference opening degree determination unit 63 then determines the reference opening degree S63 in the second processing period T2. In the second processing period T2, the pressure is reduced from the initial pressure value of 10,000 Pa to a target pressure value of 20 Pa in 20 sec. The reference opening degree determination unit 63 calculates, for each learning opening degree, a difference obtained by subtracting the second time, which is the arrival time to reach the target pressure value of 20 Pa, from the first time, which is the time to reach the initial pressure value of 10,000 Pa. Then, the reference opening degree determination unit 63 determines the reference opening degree S63 based on the learning opening degree in which the difference and the target arrival time 20 sec in the basic data S62 match or are approximate.

在圖5的基礎資料S62中,學習開度13°的第1時間為6.7 sec,第2時間為28.3 sec,差分為21.6 sec,學習開度14°的第1時間為6.4 sec,第2時間為25.6 sec,差分為19.2 sec。所以,基準開度決定部63將第2處理期間T2的基準開度S63決定為13°。In the basic data S62 of FIG. 5, the first time of learning opening degree of 13 ° is 6.7 sec, the second time is 28.3 sec, and the difference is 21.6 sec. The first time of learning opening degree of 14 ° is 6.4 sec, and the second time It is 25.6 sec, and the difference is 19.2 sec. Therefore, the reference opening degree determination unit 63 determines the reference opening degree S63 of the second processing period T2 to be 13 °.

當在步驟ST40中決定了基準開度S63之後,接著,動作控制部64控制各部,進行減壓乾燥處理(步驟ST50~步驟ST60)。在本實施方式中,在一次的步驟ST50~步驟ST60中,執行處理期間T1、處理期間T2、處理期間T3中的一個期間的減壓乾燥處理。因此,在第一回的步驟ST50~步驟ST60中,進行第1處理期間T1(20 sec)的減壓乾燥處理。After the reference opening degree S63 is determined in step ST40, the operation control unit 64 then controls each unit to perform a reduced-pressure drying process (step ST50 to step ST60). In this embodiment, in one step of ST50 to step ST60, the reduced-pressure drying process in one of the process period T1, the process period T2, and the process period T3 is performed. Therefore, in steps ST50 to ST60 of the first round, a reduced-pressure drying process in the first processing period T1 (20 sec) is performed.

具體來說,首先,在第1處理期間T1的起點,初始開度設定部641將閥45的開度設定為基準開度決定部63所決定的基準開度S63即6.5°(步驟ST50)。繼而,在第1處理期間T1開始後,反饋控制部642進行包含比例控制的反饋控制(步驟ST60)。Specifically, first, at the beginning of the first processing period T1, the initial opening degree setting unit 641 sets the opening degree of the valve 45 to 6.5 °, which is the reference opening degree S63 determined by the reference opening degree determining unit 63 (step ST50). Then, after the start of the first processing period T1, the feedback control unit 642 performs feedback control including proportional control (step ST60).

並且,在進行規定的期間的減壓乾燥處理後,控制部60判斷減壓乾燥處理是否已全部完成(步驟ST70)。具體來說,控制部60判斷是否存在殘存的處理期間。在存在殘存的處理期間的情況下,控制部60判斷為未完成減壓乾燥處理,並返回步驟ST50。另一方面,在不存在殘存的處理期間的情況下,控制部60判斷為減壓乾燥處理已全部完成,並前進至步驟ST80。After performing the reduced-pressure drying process for a predetermined period, the control unit 60 determines whether all the reduced-pressure drying processes have been completed (step ST70). Specifically, the control unit 60 determines whether there is a remaining processing period. If there is a remaining processing period, the control unit 60 determines that the reduced-pressure drying process has not been completed, and returns to step ST50. On the other hand, if there is no remaining processing period, the control unit 60 determines that the reduced-pressure drying process has been completed, and proceeds to step ST80.

在本實施方式中,只要先前的步驟ST50~步驟ST60中進行的減壓乾燥處理為第1處理期間T1或第2處理期間T2,則判斷為減壓乾燥處理未完成。另一方面,若先前的步驟ST50~步驟ST60中進行的減壓乾燥處理為第3處理期間T3,則判斷為減壓乾燥處理已全部完成。In this embodiment, if the reduced-pressure drying process performed in the previous steps ST50 to ST60 is the first processing period T1 or the second processing period T2, it is determined that the reduced-pressure drying process is not completed. On the other hand, if the reduced-pressure drying process performed in the previous steps ST50 to ST60 is the third processing period T3, it is determined that all the reduced-pressure drying processes have been completed.

當在步驟ST70中判斷為減壓乾燥處理尚未完成時,控制部60返回至步驟ST50。When it is determined in step ST70 that the reduced-pressure drying process has not been completed, the control unit 60 returns to step ST50.

在第二回的設定工序(步驟ST50)中,在第2處理期間T2之初,初始開度設定部641將閥45的開度設定為基準開度決定部63所決定的基準開度S63即13°。在本實施方式中,是在一次基準開度決定工序(步驟ST40)中決定所有的處理期間的基準開度S63,但本發明並不限於此。也可以在每個處理期間分別進行基準開度決定工序(步驟ST40)。即,也可以在各處理期間之初,將當前的測量壓力值S25作為初始壓力值來決定基準開度S63。若如此,則可在先前進行的處理期間結束時的測量壓力值S25與接下來進行的處理期間的預定初始壓力值(配方資料S70中的初始壓力值)不同的情況下,將基準開度S63重新決定為更恰當的值。In the second setting process (step ST50), at the beginning of the second processing period T2, the initial opening degree setting unit 641 sets the opening degree of the valve 45 to the reference opening degree S63 determined by the reference opening degree determining unit 63. 13 °. In the present embodiment, the reference opening degree S63 of all the processing periods is determined in one reference opening degree determining step (step ST40), but the present invention is not limited to this. The reference opening degree determination step may be performed in each processing period (step ST40). That is, the reference opening degree S63 may be determined by using the current measured pressure value S25 as an initial pressure value at the beginning of each processing period. If so, if the measured pressure value S25 at the end of the previous processing period is different from the predetermined initial pressure value (the initial pressure value in the recipe data S70) during the subsequent processing period, the reference opening S63 can be set. Re-determined to a more appropriate value.

繼而,在第二回的控制工序(步驟ST60)中,在第2處理期間T2開始後,進行反饋控制部642的反饋控制(步驟ST60)。Then, in the second control process (step ST60), the feedback control by the feedback control unit 642 is performed after the start of the second processing period T2 (step ST60).

第2處理期間T2完成後,在步驟ST70中,控制部60判斷為減壓乾燥處理尚未完成,並再次返回至步驟ST50。After the second processing period T2 is completed, in step ST70, the control unit 60 determines that the reduced-pressure drying process has not been completed, and returns to step ST50 again.

在第3處理期間T3中,使腔室20內的氣壓上升至大氣壓。因此,將閥45完全閉鎖,並停止從腔室20內的排氣。因此,在第3回的設定工序(步驟ST50)中,初始開度設定部641將基準開度S63設定為0°。而且,在第3處理期間T3中,控制部60不在控制工序(步驟ST60)中進行反饋控制,而是開放開閉閥52,由惰性氣體供給源53對腔室20內進行惰性氣體的置換。由此,使腔室20內的氣壓上升至大氣壓。當腔室20內的壓力成為大氣壓後,閉鎖開閉閥52。由此,減壓乾燥工序全部完成。In the third processing period T3, the air pressure in the chamber 20 is increased to atmospheric pressure. Therefore, the valve 45 is completely closed, and the exhaust from the chamber 20 is stopped. Therefore, in the third setting process (step ST50), the initial opening degree setting unit 641 sets the reference opening degree S63 to 0 °. In the third processing period T3, the control unit 60 does not perform feedback control in the control process (step ST60), but opens the on-off valve 52, and replaces the inert gas in the chamber 20 with the inert gas supply source 53. Thereby, the air pressure in the chamber 20 is raised to atmospheric pressure. When the pressure in the chamber 20 becomes atmospheric pressure, the on-off valve 52 is closed. This completes all the reduced-pressure drying steps.

第3處理期間T3完成後,在步驟ST70中,控制部60判斷為減壓乾燥處理已全部完成,並前進至步驟ST80。After the third processing period T3 is completed, in step ST70, the control unit 60 determines that the reduced-pressure drying processing has been completed, and proceeds to step ST80.

然後,將基板G從腔室20搬出(步驟ST80)。在步驟ST80中,與步驟ST30同樣地,在閉鎖了閥45及開閉閥52的狀態下,通過腔室開閉機構使腔室20的蓋部22上升。由此,開放腔室20。並且,將減壓乾燥處理後的基板G搬出至腔室20外。Then, the substrate G is carried out from the chamber 20 (step ST80). In step ST80, similarly to step ST30, in a state where the valve 45 and the on-off valve 52 are closed, the lid portion 22 of the chamber 20 is raised by the chamber opening and closing mechanism. Thereby, the chamber 20 is opened. Then, the substrate G after the reduced-pressure drying process is carried out of the chamber 20.

為了以期望的減壓速度來進行減壓處理,先前不設置基準開度S63而進行包含比例(Proportional,P)控制、比例積分(Proportional Integral,PI)控制或比例積分微分(Proportional Integral Derivative,PID)控制等比例控制的反饋控制。然而,在從大氣壓開始進行減壓的情況下,若僅使用反饋控制進行控制,則相對於閥45的開度變動,真空壓力變動激烈,所以產生因大幅振盪而腔室20內的壓力值難以收斂為固定值這一問題。因此,在從大氣壓開始進行減壓的情況下,如本發明般基於預先實驗性地求出的基礎資料S62來設定基準開度S63,可抑制振盪問題的產生。In order to perform decompression processing at a desired decompression speed, previously, the reference opening degree S63 was not set, and the proportional (Proportional, P) control, Proportional Integral (PI) control, or Proportional Integral Derivative (PID) ) Control feedback control of proportional control. However, when the pressure is reduced from the atmospheric pressure, if only the feedback control is used for control, the vacuum pressure fluctuates drastically with respect to the variation in the opening degree of the valve 45. Therefore, it is difficult to generate a pressure value in the chamber 20 due to large oscillation Convergence to a fixed value. Therefore, when reducing the pressure from the atmospheric pressure, setting the reference opening degree S63 based on the basic data S62 experimentally obtained in advance as in the present invention can suppress the occurrence of oscillation problems.

另一方面,若僅使用通過僅著眼於每個處理期間的基礎資料S62的初始壓力值、目標壓力值及目標到達時間而決定的基準開度S63來進行減壓處理,則存在實際的壓力變動偏離目標減壓波形R的可能性。例如,在目標減壓波形R中,壓力值隨著時間的經過而呈直線狀變化,但在圖5所示的基礎資料S62中,壓力值與減壓排氣時間的關係未必為直線狀。因此,即使基於初始壓力值、目標壓力值及目標到達時間一致的基礎資料S62來決定基準開度S63,也有可能如圖6中雙點劃線R1所示,出現相對於目標減壓波形R偏移的部分。On the other hand, if the decompression processing is performed using only the reference opening degree S63 determined by focusing only on the initial pressure value, the target pressure value, and the target arrival time of the basic data S62 in each processing period, there is an actual pressure fluctuation. The possibility of deviation from the target decompression waveform R. For example, in the target decompression waveform R, the pressure value changes linearly with the passage of time, but in the basic data S62 shown in FIG. 5, the relationship between the pressure value and the decompression exhaust time is not necessarily linear. Therefore, even if the reference opening degree S63 is determined based on the basic data S62 in which the initial pressure value, the target pressure value, and the target arrival time are consistent, there may be a deviation from the target decompression waveform R as shown by a two-dot chain line R1 in FIG. Moved parts.

而且,在減壓乾燥處理中,當減壓進展了一定程度時,溶媒開始蒸發。因在獲取基礎資料S62時腔室20內不存在溶媒,所以在實際的減壓乾燥處理時,相對於目標減壓波形R,產生因溶媒的蒸發引起的壓力的上升。因此,在不使用參照基礎資料S62而決定的基準開度S63來進行反饋控制的情況下,有可能如圖6中雙點劃線R2所示,壓力變得大於目標減壓波形R。Further, in the reduced-pressure drying process, when the reduced-pressure progresses to a certain degree, the solvent starts to evaporate. Since the solvent does not exist in the chamber 20 when the basic data S62 is obtained, during the actual reduced-pressure drying process, a pressure rise due to the evaporation of the solvent occurs relative to the target reduced-pressure waveform R. Therefore, when the feedback control is performed without using the reference opening S63 determined by referring to the basic data S62, the pressure may be greater than the target decompression waveform R as shown by a two-dot chain line R2 in FIG. 6.

因此,在所述減壓乾燥裝置1中,基於預先實驗性地求出的基礎資料S62來設定基準開度S63,並且通過反饋控制使閥開度從基準開度S63開始變化。具體來說,根據包含目標壓力值或測量壓力值S25的壓力區域來使反饋控制的權重不同。由此,可抑制所述各種問題的產生。Therefore, in the reduced-pressure drying apparatus 1, the reference opening degree S63 is set based on the basic data S62 obtained experimentally in advance, and the valve opening degree is changed from the reference opening degree S63 by feedback control. Specifically, the weights of the feedback control are made different according to a pressure region including the target pressure value or the measured pressure value S25. This can suppress the occurrence of the various problems described above.

在步驟ST60的控制工序中,反饋控制部642在進行使閥開度大於基準開度S63的控制的第1狀態下,根據目標壓力值或測量壓力值S25來變更反饋控制中的比例控制係數。由此,可對每個壓力區域使用恰當的比例控制係數。在第1狀態下使閥開度大於基準開度S63時,根據壓力區域而腔室20內的壓力值的行為容易發生變化。因此,在第1狀態下變更比例控制係數是有用的。In the control step of step ST60, the feedback control unit 642 changes the proportional control coefficient in the feedback control based on the target pressure value or the measured pressure value S25 in the first state in which the valve opening degree is greater than the reference opening degree S63. Therefore, an appropriate proportional control coefficient can be used for each pressure region. When the valve opening degree is larger than the reference opening degree S63 in the first state, the behavior of the pressure value in the chamber 20 is likely to change depending on the pressure region. Therefore, it is useful to change the proportional control coefficient in the first state.

在本實施方式中,在步驟ST60的控制工序中,反饋控制部642在進行使閥開度小於基準開度S63的控制的第2狀態下,使用規定的基準比例控制係數。如本實施方式般,在減壓處理時不進行氣體的供給的情況下,第2狀態下的比例控制的影響小。因此,使用規定的基準比例控制係數而無需針對每個壓力區域來變更比例控制係數。In the present embodiment, in the control step of step ST60, the feedback control unit 642 uses a predetermined reference proportional control coefficient in the second state in which the valve opening degree is controlled to be smaller than the reference opening degree S63. As in this embodiment, when gas is not supplied during the decompression process, the influence of the proportional control in the second state is small. Therefore, a predetermined reference proportional control coefficient is used without changing the proportional control coefficient for each pressure region.

在所述第1狀態下,反饋控制部642隨著目標壓力值或測量壓力值S25變小而加大比例控制係數。具體來說,控制部60將從0 Pa起至大氣壓即100,000 Pa為止的壓力範圍分割為至少三個壓力區域。In the first state, the feedback control unit 642 increases the proportional control coefficient as the target pressure value or the measured pressure value S25 becomes smaller. Specifically, the control unit 60 divides a pressure range from 0 Pa to atmospheric pressure, that is, 100,000 Pa, into at least three pressure regions.

並且,當目標壓力值或測量壓力值S25包含在最大的壓力區域中時,使比例控制係數小於預定的基準比例控制係數。如此,在大氣壓附近的壓力區域中,減小反饋控制的權重。由此,如上所述可抑制振盪問題的產生。When the target pressure value or the measured pressure value S25 is included in the maximum pressure region, the proportional control coefficient is made smaller than a predetermined reference proportional control coefficient. As such, in the pressure region near the atmospheric pressure, the weight of the feedback control is reduced. Thereby, the occurrence of an oscillation problem can be suppressed as described above.

另一方面,當目標壓力值或測量壓力值S25包含在最小的壓力區域中時,使比例控制係數大於預定的基準比例控制係數。如此,在溶媒蒸發的比較低的壓力區域中,加大反饋控制的權重。由此,可效率良好地抑制因溶媒的蒸發引起的壓力的上升。On the other hand, when the target pressure value or the measured pressure value S25 is included in the minimum pressure region, the proportional control coefficient is made larger than a predetermined reference proportional control coefficient. In this way, in a relatively low pressure region where the solvent is evaporated, the weight of the feedback control is increased. This makes it possible to efficiently suppress a pressure increase due to evaporation of the solvent.

圖7是表示壓力區域與比例控制係數的關係的一例的圖。在圖7的示例中,將從0 Pa起至100,000 Pa為止的壓力範圍分割為不足100 Pa的第1壓力區域、100 Pa以上且不足600 Pa的第2壓力區域、600 Pa以上且不足2,000 Pa的第3壓力區域、2,000 Pa以上且不足10,000 Pa的第4壓力區域、及10,000 Pa以上的第5壓力區域這五個壓力區域。在圖7中,第1壓力區域的比例控制係數K1是基準比例控制係數Ks的200%的值。第2壓力區域的比例控制係數K2是基準比例控制係數Ks的150%的值。第3壓力區域的比例控制係數K3是與基準比例控制係數Ks相同的值。第4壓力區域的比例控制係數K4是基準比例控制係數Ks的50%。而且,第5壓力區域的比例控制係數K5是基準比例控制係數Ks的30%。FIG. 7 is a diagram showing an example of a relationship between a pressure region and a proportional control coefficient. In the example of FIG. 7, the pressure range from 0 Pa to 100,000 Pa is divided into a first pressure region of less than 100 Pa, a second pressure region of 100 Pa or more and less than 600 Pa, and a pressure range of 600 Pa or more and less than 2,000 Pa. There are five pressure regions, namely a third pressure region of 3,000 Pa, a fourth pressure region of 2,000 Pa or more and less than 10,000 Pa, and a fifth pressure region of 10,000 Pa or more. In FIG. 7, the proportional control coefficient K1 in the first pressure region is a value of 200% of the reference proportional control coefficient Ks. The proportional control coefficient K2 in the second pressure region is a value of 150% of the reference proportional control coefficient Ks. The proportional control coefficient K3 in the third pressure region is the same value as the reference proportional control coefficient Ks. The proportional control coefficient K4 in the fourth pressure region is 50% of the reference proportional control coefficient Ks. The proportional control coefficient K5 in the fifth pressure region is 30% of the reference proportional control coefficient Ks.

像這樣通過根據壓力區域來階段性地變更第1狀態下的比例控制係數,可進行與壓力區域相應的恰當的反饋控制。因此,可通過更理想的壓力變化來進行基板G的減壓乾燥處理。As described above, by gradually changing the proportional control coefficient in the first state according to the pressure region, it is possible to perform appropriate feedback control corresponding to the pressure region. Therefore, the reduced pressure drying process of the substrate G can be performed by a more desirable pressure change.

另外,本實施方式的反饋控制部642進行包含比例控制、積分控制、及微分控制的PID控制。比例控制係數是如上所述,但關於積分控制的積分控制係數及微分控制的微分控制係數,也可以與比例控制係數同樣地,根據壓力區域來變更其值。然而,與比例控制係數相比,對所述振盪或壓力上升的問題的影響少,所以積分控制係數及微分控制係數也可以不論壓力區域如何均總是為固定。The feedback control unit 642 of this embodiment performs PID control including proportional control, integral control, and derivative control. The proportional control coefficient is as described above, but the integral control coefficient of the integral control and the differential control coefficient of the differential control may be changed in accordance with the pressure region in the same manner as the proportional control coefficient. However, compared with the proportional control coefficient, it has less influence on the problem of the oscillation or pressure rise, so the integral control coefficient and the differential control coefficient can be always fixed regardless of the pressure region.

另外,反饋控制部642既可以僅進行比例控制,也可以進行包含比例控制及積分控制的PI控制。The feedback control unit 642 may perform only proportional control, or may perform PI control including proportional control and integral control.

在所述減壓乾燥處理中,步驟ST10的學習工序也可以不在利用步驟ST20~步驟ST80進行基板G的減壓乾燥處理時進行。所述學習工序也可以在設置或遷移減壓乾燥裝置1時進行,或在定期的維修時進行。In the reduced-pressure drying process, the learning step of step ST10 may not be performed when the reduced-pressure drying process of the substrate G is performed in steps ST20 to ST80. The learning process may be performed when the reduced-pressure drying device 1 is installed or migrated, or may be performed during regular maintenance.

在本實施方式中,如上所述,每次減壓乾燥處理時或定期地獲取基礎資料S62。若減壓乾燥裝置1的設置環境不同,則即使閥45的開度相同,腔室20內的減壓速度也各不相同。而且,在由相同設計而製造的多個減壓乾燥裝置1中,即使以相同的閥45的開度來進行減壓乾燥處理,也會因裝置間的製造誤差等,而在各減壓乾燥裝置1的腔室20內的減壓速度中也會存在偏差。在所述減壓乾燥裝置1中,是在與進行基板G的減壓乾燥處理時相同的裝置及設置環境下,獲取基礎資料S62。通過基於所述基礎資料S62來決定基準開度S63,可抑制在期望的減壓速度與現實的減壓速度之間產生背離。即,能夠以與期望的減壓速度更接近的減壓速度來進行減壓處理。由此,抗蝕劑液的突沸得到抑制,可獲得平滑的抗蝕劑膜。In this embodiment, as described above, the basic data S62 is acquired every time the vacuum drying process is performed or periodically. If the installation environment of the decompression drying device 1 is different, even if the opening degree of the valve 45 is the same, the decompression speed in the chamber 20 will be different. Furthermore, in a plurality of reduced-pressure drying apparatuses 1 manufactured with the same design, even if the reduced-pressure drying process is performed with the same opening degree of the valve 45, the reduced-pressure drying is performed due to manufacturing errors between the apparatuses and the like. There is also a deviation in the decompression speed in the chamber 20 of the device 1. In the reduced-pressure drying device 1, the basic data S62 is acquired under the same device and installation environment as when the reduced-pressure drying process of the substrate G is performed. By determining the reference opening degree S63 based on the basic data S62, a deviation between a desired decompression speed and a real decompression speed can be suppressed. That is, the decompression process can be performed at a decompression speed closer to a desired decompression speed. Thereby, bump bump of the resist liquid is suppressed, and a smooth resist film can be obtained.

<2.變形例> 以上,對本發明的一實施方式進行了說明,但本發明並不限定於所述實施方式。<2. Modifications> An embodiment of the present invention has been described above, but the present invention is not limited to the embodiment.

在所述實施方式中,是基於由學習工序獲得的基礎資料來決定基準開度,但本發明並不限於此。作為基準開度,例如,既可以使用與目標資料一起輸入的基準開度,也可以將以相同的配方資料在過去進行的減壓乾燥處理中的每個期間的平均開度作為基準開度。In the above embodiment, the reference opening degree is determined based on the basic data obtained in the learning process, but the present invention is not limited to this. As the reference opening degree, for example, the reference opening degree inputted with the target data may be used, or the average opening degree of each period in the reduced-pressure drying process performed with the same recipe data in the past may be used as the reference opening degree.

而且,在所述實施方式中,在第1狀態下,隨著目標壓力值或測量壓力值變小而加大比例控制係數,另一方面,在第2狀態下使用了規定的基準比例控制係數。然而,也可以在第1狀態及第2狀態這兩者中,隨著目標壓力值或測量壓力值變小而加大比例控制係數。Further, in the embodiment described above, in the first state, the proportional control coefficient is increased as the target pressure value or the measured pressure value becomes smaller. On the other hand, a predetermined reference proportional control coefficient is used in the second state. . However, in both the first state and the second state, the proportional control coefficient may be increased as the target pressure value or the measured pressure value becomes smaller.

而且,在所述實施方式中,減壓乾燥裝置僅具有一個腔室,但本發明並不限於此。減壓乾燥裝置也可以具有多個腔室及連接於腔室的每一個的多個配管部。Moreover, in the said embodiment, although a vacuum drying apparatus has only one chamber, this invention is not limited to this. The reduced-pressure drying device may include a plurality of chambers and a plurality of piping portions connected to each of the chambers.

而且,在所述實施方式中,配管部具有兩個閥,但配備于配管部的閥既可以為一個,也可以為三個以上。Moreover, in the said embodiment, although a piping part has two valves, one valve may be provided in a piping part, and three or more valves may be sufficient.

而且,所述實施方式在減壓乾燥裝置是基板處理裝置的一部分,但本發明的減壓乾燥裝置也可以是不與其他處理部一起設置的獨立的裝置。而且,所述實施方式的減壓乾燥裝置是使附著有抗蝕劑液的基板乾燥,但本發明的減壓乾燥裝置也可以使附著有其他處理液的基板乾燥。In the above-mentioned embodiment, the reduced-pressure drying apparatus is a part of the substrate processing apparatus, but the reduced-pressure drying apparatus of the present invention may be a separate apparatus that is not provided together with other processing units. The reduced-pressure drying device according to the above embodiment dries the substrate to which the resist liquid is attached, but the reduced-pressure drying device of the present invention may dry the substrate to which other processing liquids are attached.

而且,所述實施方式的減壓乾燥裝置將液晶顯示裝置用玻璃基板作為處理對象,但本發明的減壓乾燥裝置也可以將有機EL(Electroluminescence)顯示裝置等的其他FPD(Flat Panel Display)用基板、半導體晶片、光掩膜用玻璃基板、彩色濾光片用基板、記錄磁盤用基板、太陽能電池用基板等其他精密電子裝置用基板作為處理對象。Furthermore, the vacuum drying device of the above embodiment uses a glass substrate for a liquid crystal display device as a processing target, but the vacuum drying device of the present invention may also be used for other FPD (Flat Panel Display) such as an organic EL (Electroluminescence) display device. Substrates, substrates for semiconductor wafers, glass substrates for photomasks, substrates for color filters, substrates for recording magnetic disks, substrates for solar cells, and other substrates for precision electronic devices are processed.

而且,也可以將所述實施方式或變形例中出現的各元件在不產生矛盾的範圍內適當組合。Furthermore, the respective elements appearing in the embodiment or the modification may be appropriately combined within a range where no contradiction occurs.

1‧‧‧減壓乾燥裝置1‧‧‧ vacuum drying device

9‧‧‧基板處理裝置9‧‧‧ substrate processing equipment

20‧‧‧腔室20‧‧‧ chamber

21‧‧‧基座部21‧‧‧ base

22‧‧‧蓋部22‧‧‧ Cover

23‧‧‧排氣口23‧‧‧Exhaust port

24‧‧‧支撐機構24‧‧‧ support

25‧‧‧壓力傳感器(測量部)25‧‧‧Pressure sensor (measurement department)

30‧‧‧排氣泵(減壓排氣部)30‧‧‧Exhaust pump (decompression exhaust)

40‧‧‧配管部40‧‧‧Piping Department

41‧‧‧單獨配管41‧‧‧Separate piping

42‧‧‧第1共有配管42‧‧‧The first common piping

43‧‧‧第2共有配管43‧‧‧The second common piping

44‧‧‧分支配管44‧‧‧ branch piping

45‧‧‧閥45‧‧‧ valve

50‧‧‧惰性氣體供給部50‧‧‧Inert gas supply department

51‧‧‧惰性氣體供給配管51‧‧‧Inert gas supply piping

52‧‧‧開閉閥52‧‧‧Open and close valve

53‧‧‧惰性氣體供給源53‧‧‧Inert gas supply source

60‧‧‧控制部60‧‧‧Control Department

61‧‧‧目標資料獲取部61‧‧‧Target data acquisition department

62‧‧‧基礎資料獲取部62‧‧‧Basic Information Acquisition Department

63‧‧‧基準開度決定部63‧‧‧ Benchmark opening decision

64‧‧‧動作控制部64‧‧‧Action Control Department

70‧‧‧輸入部70‧‧‧Input Department

90‧‧‧搬入部90‧‧‧ Move-in Department

91‧‧‧清洗部91‧‧‧Cleaning Department

92‧‧‧脫水烘烤部92‧‧‧Dehydration Baking Department

93‧‧‧塗布部93‧‧‧ Coating Department

94‧‧‧預烘烤部94‧‧‧Pre-baking department

95‧‧‧曝光部95‧‧‧Exposure Department

96‧‧‧顯影部96‧‧‧Developing Department

97‧‧‧漂洗部97‧‧‧ Rinse Department

98‧‧‧後烘烤部98‧‧‧ post-baking department

99‧‧‧搬出部99‧‧‧moved out

221‧‧‧密封材221‧‧‧sealing material

241‧‧‧支撐板241‧‧‧Support plate

242‧‧‧支撐銷242‧‧‧Support pin

243‧‧‧支撐柱243‧‧‧Support Post

601‧‧‧運算處理部601‧‧‧Operation Processing Department

602‧‧‧存儲器602‧‧‧Memory

603‧‧‧存儲部603‧‧‧Storage Department

641‧‧‧初始開度設定部641‧‧‧ Initial opening setting unit

642‧‧‧反饋控制部642‧‧‧Feedback Control Department

G‧‧‧基板G‧‧‧ substrate

S25‧‧‧測量壓力值S25‧‧‧Measured pressure value

S61‧‧‧目標資料S61‧‧‧ Target Information

S62‧‧‧基礎資料S62‧‧‧ Basic Information

S63‧‧‧基準開度S63‧‧‧ benchmark opening

S70‧‧‧配方資料S70‧‧‧ Formula Information

ST10~ST80‧‧‧步驟ST10 ~ ST80‧‧‧‧Steps

R‧‧‧目標減壓波形R‧‧‧Target decompression waveform

R1、R2‧‧‧雙點劃線R1, R2 ‧‧‧ double-dot

T1~T3‧‧‧處理期間T1 ~ T3‧‧‧‧During processing

圖1是表示第1實施方式的基板處理裝置的構成的概略圖。 圖2是表示第1實施方式的減壓乾燥裝置的構成的概略圖。 圖3是表示第1實施方式的減壓乾燥裝置的電氣連接的框圖。 圖4是表示第1實施方式的減壓乾燥處理的流程的流程圖。 圖5是表示第1實施方式的學習工序中的減壓排氣時間與壓力值的關係的一例的圖表。 圖6是表示第1實施方式的目標減壓波形的一例的圖。 圖7是表示壓力區域與比例控制係數的關係的一例的圖。FIG. 1 is a schematic diagram showing a configuration of a substrate processing apparatus according to a first embodiment. FIG. 2 is a schematic diagram showing a configuration of a reduced-pressure drying device according to the first embodiment. FIG. 3 is a block diagram showing the electrical connection of the vacuum drying apparatus according to the first embodiment. FIG. 4 is a flowchart showing a flow of a reduced-pressure drying process according to the first embodiment. FIG. 5 is a graph showing an example of the relationship between the decompression exhaust time and the pressure value in the learning process of the first embodiment. FIG. 6 is a diagram showing an example of a target decompression waveform according to the first embodiment. FIG. 7 is a diagram showing an example of a relationship between a pressure region and a proportional control coefficient.

Claims (20)

一種減壓乾燥裝置,對附著有處理液的基板進行減壓乾燥,所述減壓乾燥裝置包括: 腔室,收容所述基板; 減壓排氣部,對所述腔室內進行減壓排氣; 閥,設置於所述腔室與所述減壓排氣部之間,通過閥開度對減壓排氣的流量進行調節; 測量部,對所述腔室內的壓力進行測量;以及 控制部,分別與所述腔室、所述減壓排氣部、所述閥、所述測量部電性連接, 所述控制部具有: 動作控制部,在執行減壓乾燥處理時,基於多個處理期間的每一個的目標壓力值及目標到達時間,對所述閥開度進行控制, 所述動作控制部包括: 初始開度設定部,在各處理期間的起點將所述閥開度設為基準開度;以及 反饋控制部,基於所述測量部所測量的測量壓力值,通過包含比例控制的反饋控制對所述閥開度進行控制, 所述反饋控制部在進行使所述閥開度大於所述基準開度的控制的第1狀態下,根據所述目標壓力值或所述測量壓力值來變更比例控制係數。A reduced-pressure drying device for decompressing and drying a substrate to which a processing solution is attached. The reduced-pressure drying device includes: a chamber that houses the substrate; a reduced-pressure exhaust unit that performs reduced-pressure exhaust on the chamber. A valve provided between the chamber and the reduced-pressure exhaust unit to adjust the flow of the reduced-pressure exhaust gas by the valve opening degree; a measurement unit that measures the pressure in the chamber; and a control unit Are electrically connected to the chamber, the decompression exhaust part, the valve, and the measurement part, respectively, and the control part includes: an operation control part, which executes decompression drying processing based on a plurality of processes The target pressure value and the target arrival time of each period control the valve opening degree, and the operation control unit includes: an initial opening degree setting unit that sets the valve opening degree as a reference at a starting point of each processing period An opening degree; and a feedback control unit that controls the valve opening degree by a feedback control including a proportional control based on the measured pressure value measured by the measuring unit, and the feedback control unit is performing the valve opening degree The first control state at the reference opening degree, the target value according to the measured pressure or the pressure value to change the proportional control factor. 如申請專利範圍第1項所述的減壓乾燥裝置,其中, 所述反饋控制部: 在進行使所述閥開度小於所述基準開度的控制的第2狀態下,使用規定的基準比例控制係數來進行比例控制, 在所述第1狀態下,隨著所述目標壓力值或所述測量壓力值變小而使所述比例控制係數變大。The reduced-pressure drying device according to item 1 of the scope of patent application, wherein the feedback control unit: uses a predetermined reference ratio in a second state in which the valve opening degree is controlled to be smaller than the reference opening degree. The proportional control is performed by controlling the coefficient. In the first state, the proportional control coefficient becomes larger as the target pressure value or the measured pressure value becomes smaller. 如申請專利範圍第2項所述的減壓乾燥裝置,其中, 所述控制部將從0 Pa起至大氣壓即100,000 Pa為止分割為至少三個壓力區域, 所述反饋控制部在所述第1狀態下, 當所述目標壓力值或所述測量壓力值包含在最大的所述壓力區域中時,使所述比例控制係數小於所述基準比例控制係數, 當所述目標壓力值或所述測量壓力值包含在最小的所述壓力區域中時,使所述比例控制係數大於所述基準比例控制係數。The reduced-pressure drying device according to item 2 of the scope of patent application, wherein the control section is divided into at least three pressure regions from 0 Pa to atmospheric pressure, that is, 100,000 Pa, and the feedback control section is in the first In a state, when the target pressure value or the measured pressure value is included in the maximum pressure region, the proportional control coefficient is made smaller than the reference proportional control coefficient, and when the target pressure value or the measurement When the pressure value is included in the minimum pressure region, the proportional control coefficient is made larger than the reference proportional control coefficient. 如申請專利範圍第1項所述的減壓乾燥裝置,其中, 所述反饋控制部: 在所述第1狀態及進行使所述閥開度小於所述基準開度的控制的第2狀態這兩者中,隨著所述目標壓力值或所述測量壓力值變小而使所述比例控制係數變大。The reduced-pressure drying device according to item 1 of the scope of patent application, wherein the feedback control unit: in the first state and the second state in which control for making the valve opening degree smaller than the reference opening degree is performed Of the two, as the target pressure value or the measured pressure value becomes smaller, the proportional control coefficient becomes larger. 如申請專利範圍第1項至第4項中任一項所述的減壓乾燥裝置,其中, 所述反饋控制部進行包含所述比例控制及積分控制的所述反饋控制。The reduced-pressure drying device according to any one of claims 1 to 4, in which the feedback control section performs the feedback control including the proportional control and the integral control. 如申請專利範圍第1項至第4項中任一項所述的減壓乾燥裝置,其中, 所述反饋控制部進行包含所述比例控制、積分控制及微分控制的所述反饋控制。The reduced-pressure drying device according to any one of claims 1 to 4, wherein the feedback control unit performs the feedback control including the proportional control, integral control, and differential control. 如申請專利範圍第1項至第4項中任一項所述的減壓乾燥裝置,其中, 所述控制部還具有: 目標資料獲取部,獲取包含各處理期間的所述目標壓力值及所述目標到達時間的目標資料; 基礎資料獲取部,針對規定的多個所述閥開度中的每一個,獲取表示減壓排氣引起的所述腔室內的壓力與到達所述壓力的到達時間的關係的基礎資料;以及 基準開度決定部,基於所述基礎資料與所述目標資料的比較來決定所述基準開度。The reduced-pressure drying device according to any one of claims 1 to 4, in which the control unit further includes: a target data acquisition unit that acquires the target pressure value and the target pressure including each processing period. The target data of the target arrival time; the basic data acquisition unit acquires, for each of a plurality of the valve opening degrees, a pressure indicating the pressure in the chamber caused by the decompression exhaust and the arrival time to the pressure; Basic data of the relationship; and a reference opening degree determination unit, which determines the reference opening degree based on a comparison between the basic data and the target data. 如申請專利範圍第7項所述的減壓乾燥裝置,其中, 所述基準開度決定部針對所述處理期間的每一個, 從所述基礎資料中,針對每一個所述閥開度,參照從大氣壓起到達所述處理期間的初始壓力值的到達時間即第1時間及從大氣壓起到達所述目標壓力值的到達時間即第2時間,算出所述第2時間與所述第1時間的差分, 基於所述差分與所述目標到達時間一致或近似的所述閥開度,決定減壓乾燥處理執行時的所述閥開度。The reduced-pressure drying device according to item 7 of the scope of patent application, wherein the reference opening degree determination unit refers to the basic data for each of the valve opening degrees from the basic data for each of the processing periods. The first time to reach the initial pressure value from the atmospheric pressure during the processing period is the first time, and the second time is to reach the target pressure value from the atmospheric pressure, which is the second time. Differentially, based on the valve opening degree in which the difference and the target arrival time are the same or similar, determine the valve opening degree when the reduced-pressure drying process is performed. 如申請專利範圍第8項所述的減壓乾燥裝置,其中, 所述基準開度決定部: 在存在所述差分與所述目標到達時間一致的所述閥開度的情況下,將所述差分與所述目標到達時間一致的所述閥開度決定為所述基準開度, 在不存在所述差分與所述目標到達時間一致的所述閥開度的情況下,將所述差分大於所述目標到達時間且所述差分最近似於所述目標到達時間的所述閥開度決定為所述基準開度。The reduced-pressure drying device according to item 8 of the scope of patent application, wherein the reference opening degree determining unit: when the valve opening degree in which the difference coincides with the target arrival time, sets the valve opening degree The valve opening degree whose difference is consistent with the target arrival time is determined as the reference opening degree, and when the valve opening degree where the difference is consistent with the target arrival time is determined, the difference is greater than The valve opening degree of the target arrival time and the difference closest to the target arrival time is determined as the reference opening degree. 如申請專利範圍第1項至第4項中任一項所述的減壓乾燥裝置,其中, 所述閥是通過改變閥體的角度來調節開度。The pressure-reducing drying device according to any one of claims 1 to 4, wherein the valve adjusts the opening degree by changing the angle of the valve body. 一種基板處理裝置,對所述基板進行抗蝕劑液的塗布及顯影,所述基板處理裝置包括: 塗布部,對曝光處理前的所述基板塗布所述抗蝕劑液; 如申請專利範圍第1項至第10項中任一項所述的減壓乾燥裝置,對附著有所述抗蝕劑液的所述基板進行減壓乾燥;以及 顯影部,對實施有所述曝光處理的所述基板進行顯影處理。A substrate processing apparatus for applying and developing a resist solution to the substrate, the substrate processing apparatus includes: a coating section that applies the resist solution to the substrate before exposure processing; The reduced-pressure drying device according to any one of items 1 to 10, wherein the substrate to which the resist solution is adhered is dried under reduced pressure; and a developing unit is configured to perform the exposure treatment on the substrate. The substrate is developed. 一種減壓乾燥方法,通過將附著有處理液的基板收容在腔室內並對所述腔室內進行減壓,而使所述基板乾燥,所述減壓乾燥方法包括: a)資料獲取工序,針對一個或多個處理期間,獲取包含目標壓力值及目標到達時間的目標資料、以及與所述目標資料相應的基準開度; b)設定工序,在所述處理期間的起點,將對從所述腔室的減壓排氣的流量進行調節的閥的閥開度設定為所述基準開度;以及 c)控制工序,在所述處理期間開始後,基於測量部所測量的所述腔室內的測量壓力值進行包含比例控制的反饋控制, 在所述工序c)中,在進行使所述閥開度大於所述基準開度的控制的第1狀態下,根據所述目標壓力值或所述測量壓力值對比例控制係數進行變更。A reduced-pressure drying method for drying a substrate by accommodating a substrate to which a processing solution is attached in a chamber and decompressing the substrate. The reduced-pressure drying method includes: a) a data acquisition step, Obtaining one or more target data including target pressure value and target arrival time, and a reference opening corresponding to the target data during one or more processing periods; b) setting a process, starting at the processing period, The valve opening degree of the valve that regulates the flow of the decompression exhaust gas in the chamber is set to the reference opening degree; and c) a control step, after the processing period is started, based on Measure the pressure value and perform feedback control including proportional control. In the step c), in a first state in which control is performed to make the valve opening degree greater than the reference opening degree, the target pressure value or the The measured pressure value changes the proportional control coefficient. 如申請專利範圍第12項所述的減壓乾燥方法,其中, 在所述工序c)中, 在進行使所述閥開度小於所述基準開度的控制的第2狀態下,使用規定的基準比例控制係數來進行比例控制, 在所述第1狀態下,隨著所述目標壓力值或所述測量壓力值變小而使所述比例控制係數變大。The reduced-pressure drying method according to item 12 of the scope of patent application, wherein in the step c), in a second state in which control to make the valve opening degree smaller than the reference opening degree is used, a predetermined Proportional control is performed with reference to a proportional control coefficient. In the first state, the proportional control coefficient becomes larger as the target pressure value or the measured pressure value becomes smaller. 如申請專利範圍第13項所述的減壓乾燥方法,其中, 在所述工序c)中, 在所述第1狀態下, 當所述目標壓力值或所述測量壓力值包含在至少三個壓力區域中的最大的所述壓力區域中時,使所述比例控制係數小於所述基準比例控制係數, 當所述目標壓力值或所述測量壓力值包含在最小的所述壓力區域中時,使所述比例控制係數大於所述基準比例控制係數。The reduced-pressure drying method according to item 13 of the scope of patent application, wherein in the step c), in the first state, when the target pressure value or the measured pressure value is included in at least three When the pressure region is the largest in the pressure region, the proportional control coefficient is made smaller than the reference proportional control coefficient, and when the target pressure value or the measured pressure value is included in the minimum pressure region, Make the proportional control coefficient larger than the reference proportional control coefficient. 如申請專利範圍第12項所述的減壓乾燥方法,其中, 在所述工序c)中,在所述第1狀態及進行使所述閥開度小於所述基準開度的控制的第2狀態這兩者中,隨著所述目標壓力值或所述測量壓力值變小而使所述比例控制係數變大。The reduced-pressure drying method according to item 12 of the scope of patent application, wherein in the step c), in the first state and the second step of performing control to make the valve opening degree smaller than the reference opening degree In both states, the proportional control coefficient becomes larger as the target pressure value or the measured pressure value becomes smaller. 如申請專利範圍第12項至第15項中任一項所述的減壓乾燥方法,其中, 在所述工序c)中進行包含所述比例控制及積分控制的所述反饋控制。The reduced-pressure drying method according to any one of claims 12 to 15 in the scope of patent application, wherein the feedback control including the proportional control and integral control is performed in the step c). 如申請專利範圍第12項至第15項中任一項所述的減壓乾燥方法,其中, 在所述工序c)中進行包含所述比例控制、積分控制及微分控制的所述反饋控制。The reduced-pressure drying method according to any one of claims 12 to 15 in the scope of the patent application, wherein the feedback control including the proportional control, integral control, and differential control is performed in the step c). 如申請專利範圍第12項至第15項中任一項所述的減壓乾燥方法,其中, 所述工序a)包括: a1)學習工序,針對多個所述閥開度中的每一個,獲取表示減壓排氣引起的所述腔室內的壓力與到達所述壓力的到達時間的關係的基礎資料; a2)目標資料獲取工序,獲取所述目標資料;以及 a3)基準開度決定工序,在所述工序a1)及所述工序a2)之後,基於所述基礎資料及所述目標資料來決定所述基準開度。The reduced-pressure drying method according to any one of items 12 to 15 of the scope of application for a patent, wherein the step a) includes: a1) a learning step for each of a plurality of the valve opening degrees, Acquiring basic data representing the relationship between the pressure in the chamber caused by the decompression exhaust and the time to reach the pressure; a2) a target data acquisition process to acquire the target data; and a3) a reference opening determination process, After the steps a1) and a2), the reference opening degree is determined based on the basic data and the target data. 如申請專利範圍第18項所述的減壓乾燥方法,其中, 所述工序a3)包括: a31)從所述基礎資料中,針對每一個所述閥開度,參照到達所述處理期間的初始壓力值的所述到達時間即第1時間、及到達所述目標壓力值的所述到達時間即第2時間的工序; a32)算出所述第2時間與所述第1時間的差分的工序; a33)基於所述差分與所述目標到達時間一致或近似的所述閥開度,決定所述基準開度的工序。The reduced-pressure drying method according to item 18 of the scope of patent application, wherein the step a3) includes: a31) from the basic data, for each of the valve opening degrees, reference is made to the initial value reached during the processing period. A step of calculating the first time of the pressure value and a second time of the time of reaching the target pressure value; a32) a step of calculating a difference between the second time and the first time; a33) A step of determining the reference opening degree based on the valve opening degree in which the difference is consistent or similar to the target arrival time. 如申請專利範圍第19項所述的減壓乾燥方法,其中, 在所述工序a33)中, 在存在所述差分與所述目標到達時間一致的所述閥開度的情況下,將所述差分與所述目標到達時間一致的所述閥開度決定為所述基準開度, 在不存在所述差分與所述目標到達時間一致的所述閥開度的情況下,將所述差分大於所述目標到達時間且所述差分最近似於所述目標到達時間的所述閥開度決定為所述基準開度。The reduced-pressure drying method according to item 19 of the scope of application for a patent, wherein in the step a33), when the valve opening degree in which the difference is consistent with the target arrival time exists, the The valve opening degree whose difference is consistent with the target arrival time is determined as the reference opening degree, and when the valve opening degree where the difference is consistent with the target arrival time is determined, the difference is greater than The valve opening degree of the target arrival time and the difference closest to the target arrival time is determined as the reference opening degree.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808813B (en) * 2021-07-15 2023-07-11 日商斯庫林集團股份有限公司 Substrate cleaning device, substrate cleaning system, substrate processing system, substrate cleaning method and substrate processing method
TWI876120B (en) * 2021-01-06 2025-03-11 美商應用材料股份有限公司 Autonomous substrate processing system and process tool

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114706431B (en) * 2022-03-29 2025-03-25 北京华丞电子有限公司 Pressure control method and device for reaction chamber and semiconductor process equipment
CN115236948B (en) * 2022-08-02 2023-08-15 江苏晶杰光电科技有限公司 Drying device of wafer photoetching machine

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795604U (en) * 1980-12-01 1982-06-12
JP2627039B2 (en) * 1992-06-24 1997-07-02 シーケーディ株式会社 Vacuum exhaust device
JPH06236857A (en) * 1993-02-09 1994-08-23 Hitachi Ltd Pressure control method for semiconductor manufacturing equipment
JP2002297244A (en) * 2001-04-03 2002-10-11 Matsushita Electric Ind Co Ltd Method for controlling pressure of reaction chamber and device for the same
JP4961223B2 (en) * 2007-01-31 2012-06-27 株式会社日立ハイテクノロジーズ Pressure control method for plasma processing apparatus
JP5371605B2 (en) * 2008-09-25 2013-12-18 東京エレクトロン株式会社 Vacuum drying apparatus and vacuum drying method
KR101494924B1 (en) * 2009-10-16 2015-02-23 도쿄엘렉트론가부시키가이샤 Decompression Drying Apparatus and Decompression Drying Method
JP2011165691A (en) * 2010-02-04 2011-08-25 Tokyo Electron Ltd Reduced pressure drying method and reduced pressure drying device
JP6080506B2 (en) * 2012-11-07 2017-02-15 東京エレクトロン株式会社 Vacuum device, pressure control method thereof, and etching method
JP6093172B2 (en) * 2012-12-26 2017-03-08 株式会社Screenホールディングス Vacuum drying apparatus and vacuum drying method
JP6391362B2 (en) * 2014-08-25 2018-09-19 株式会社Screenホールディングス Vacuum drying apparatus, substrate processing apparatus, and vacuum drying method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI876120B (en) * 2021-01-06 2025-03-11 美商應用材料股份有限公司 Autonomous substrate processing system and process tool
TWI808813B (en) * 2021-07-15 2023-07-11 日商斯庫林集團股份有限公司 Substrate cleaning device, substrate cleaning system, substrate processing system, substrate cleaning method and substrate processing method
US12485461B2 (en) 2021-07-15 2025-12-02 SCREEN Holdings Co., Ltd. Substrate cleaning device, substrate cleaning system, substrate processing system, substrate cleaning method and substrate processing method

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CN110310904B (en) 2023-05-16

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