TW201947053A - Method for enhancing adhesion of anti-fouling film - Google Patents
Method for enhancing adhesion of anti-fouling film Download PDFInfo
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- TW201947053A TW201947053A TW107115796A TW107115796A TW201947053A TW 201947053 A TW201947053 A TW 201947053A TW 107115796 A TW107115796 A TW 107115796A TW 107115796 A TW107115796 A TW 107115796A TW 201947053 A TW201947053 A TW 201947053A
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- 230000003373 anti-fouling effect Effects 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 57
- 230000002708 enhancing effect Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 238000000576 coating method Methods 0.000 claims abstract description 79
- 239000011248 coating agent Substances 0.000 claims abstract description 78
- 230000008569 process Effects 0.000 claims abstract description 22
- 239000002243 precursor Substances 0.000 claims abstract description 12
- 238000012986 modification Methods 0.000 claims abstract description 11
- 230000004048 modification Effects 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 11
- 238000005137 deposition process Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- ADKPKEZZYOUGBZ-UHFFFAOYSA-N [C].[O].[Si] Chemical compound [C].[O].[Si] ADKPKEZZYOUGBZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 230000003669 anti-smudge Effects 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
- 238000007747 plating Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- 239000003570 air Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- -1 ether compound Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000036967 uncompetitive effect Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/12—Composite membranes; Ultra-thin membranes
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Treatment Of Glass (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本發明是有關於一種抗汙膜之製作技術,且特別是有關於一種提高抗汙膜之附著力的方法。 The invention relates to a technique for manufacturing an antifouling film, and in particular, to a method for improving the adhesion of an antifouling film.
隨著可攜式電子裝置的蓬勃發展,抗汙處理已成為製程中不可或缺的步驟之一。抗汙處理有許多用途,例如抗汙處理可提供可攜式電子裝置之觸控面板抗汙與耐摩擦的功效,藉此達到保持可攜式電子裝置之外觀與延長可攜式電子裝置之使用壽命的目標。 With the vigorous development of portable electronic devices, antifouling treatment has become one of the indispensable steps in the manufacturing process. Antifouling treatment has many uses. For example, antifouling treatment can provide the anti-fouling and anti-friction effects of touch panels of portable electronic devices, so as to maintain the appearance of portable electronic devices and extend the use of portable electronic devices Goal of life.
在抗汙處理上,目前較為常見的一種是針對玻璃基板的抗汙處理。此種抗汙處理係先清洗玻璃基板,再對玻璃基板進行電漿處理,藉以在玻璃基板之表面上形成氫氧(-OH)官能基。接著,在玻璃基板之表面上塗布含氟矽氧烷。隨後進行烘烤處理,以使含氟矽氧烷與玻璃基板之表面上的氫氧官能基形成鍵結,而在玻璃基板之表面上形成單分子抗汙塗層,進而完成玻璃基板之表面的抗汙處理。此單分子抗汙塗層幾乎不影響玻璃基板原來的光學特性。雖然此種 方式所得之抗汙塗層有不影響基材外觀的優點,但目前卻只能應用在玻璃上,應用在其他材質的基板時的效果不佳。 In antifouling treatment, a more common one is antifouling treatment for glass substrates. This antifouling treatment involves cleaning the glass substrate first, and then performing plasma treatment on the glass substrate, thereby forming a hydroxyl group (-OH) functional group on the surface of the glass substrate. Next, the surface of the glass substrate was coated with fluorine-containing siloxane. Subsequently, a baking treatment is performed to form a bond between the fluorine-containing siloxane and the hydroxyl functional group on the surface of the glass substrate, and a single-molecule antifouling coating is formed on the surface of the glass substrate, thereby completing the surface of the glass substrate. Antifouling treatment. This single-molecule antifouling coating hardly affects the original optical characteristics of the glass substrate. Although the antifouling coating obtained in this way has the advantage of not affecting the appearance of the substrate, it is currently only applied to glass, and the effect is not good when applied to substrates made of other materials.
另外一種抗汙處理方法則係以高分子混合含氟分子來做成透明高分子塗料,再將此透明高分子塗料塗布在玻璃或其他基板上,而在基板上形成抗汙膜,藉此使基板具有抗汙功效。然而,此種方法所形成之抗汙膜的厚度較厚,通常有幾百奈米甚至微米(μm)等級,會嚴重影響基板的光澤度與質感。 Another antifouling treatment method is to use a polymer mixed with fluorine-containing molecules to make a transparent polymer coating, and then coat this transparent polymer coating on glass or other substrates to form an antifouling film on the substrate. The substrate has antifouling effect. However, the thickness of the antifouling film formed by this method is relatively thick, usually several hundred nanometers or even micrometers (μm), which will seriously affect the glossiness and texture of the substrate.
因此,本發明之一目的就是在提供一種提高抗汙膜之附著力的方法,其可在非玻璃基板、或其欲鍍膜表面不具有氧化矽(SiOx)層之基板上形成以氧化矽(SiOx)為主的改質鍍膜。藉此,可使氫氧(-OH)官能基順利形成在改質鍍膜之表面上。抗汙分子可與改質鍍膜之表面上的氫氧官能基產生鍵結,而可形成穩固附著於改質鍍膜上的抗汙膜,藉此可達到提高抗汙膜對基板之附著力的效果。 Therefore, an object of the present invention is to provide a method for improving the adhesion of an antifouling film, which can be formed on a non-glass substrate or a substrate on which the surface to be coated does not have a silicon oxide (SiO x ) layer. SiO x ) -based modified coating. Thereby, a hydrogen-oxygen (-OH) functional group can be smoothly formed on the surface of the modified plating film. Antifouling molecules can bond with the hydroxyl functional groups on the surface of the modified coating film, and can form an antifouling film firmly attached to the modified coating film, thereby achieving the effect of improving the adhesion of the antifouling film to the substrate .
本發明之另一目的是在提供一種提高抗汙膜之附著力的方法,其可利用大氣電漿製程來沉積改質鍍膜,因此相較於真空鍍膜製程,本方法可大幅降低製程成本。 Another object of the present invention is to provide a method for improving the adhesion of an antifouling film. The modified plasma coating can be deposited by an atmospheric plasma process. Therefore, compared with a vacuum coating process, the method can greatly reduce the manufacturing cost.
本發明之又一目的是在提供一種提高抗汙膜之附著力的方法,其可應用於結構複雜的基板,且可適用於各種材質之基板的鍍膜上,具有極廣泛的應用性。 Another object of the present invention is to provide a method for improving the adhesion of an antifouling film, which can be applied to a substrate with a complicated structure, and can be applied to the plating film of substrates of various materials, and has extremely wide applicability.
根據本發明之上述目的,提出一種提高抗汙膜之附著力的方法。在此方法中,提供基板。形成改質鍍膜於基板之表面上,其中形成改質鍍膜時包含使用前驅物,此前驅物包含矽碳氧分子。塗布抗汙分子於改質鍍膜上。進行烘烤製程。 According to the above object of the present invention, a method for improving the adhesion of an antifouling film is proposed. In this method, a substrate is provided. The modified coating is formed on the surface of the substrate, and the precursor is used when forming the modified coating, and the precursor includes silicon carbon oxygen molecules. Coating antifouling molecules on the modified coating. Perform the baking process.
依據本發明之一實施例,上述之基板為一非玻璃基板、或一鍍膜表面不具氧化矽(SiOx)層之一基板。 According to an embodiment of the present invention, the above substrate is a non-glass substrate, or a substrate having a coating surface without a silicon oxide (SiO x ) layer.
依據本發明之一實施例,上述形成改質鍍膜時包含利用大氣電漿沉積製程,且前驅物包含氣體或液體。 According to an embodiment of the present invention, the forming of the modified coating film includes an atmospheric plasma deposition process, and the precursor includes a gas or a liquid.
依據本發明之一實施例,上述之改質鍍膜包含氧化矽(SiOx)。 According to an embodiment of the present invention, the modified coating film includes silicon oxide (SiO x ).
依據本發明之一實施例,上述之改質鍍膜包含二氧化矽、氧化矽、及/或碳氧化矽。 According to an embodiment of the present invention, the modified coating film includes silicon dioxide, silicon oxide, and / or silicon oxycarbide.
依據本發明之一實施例,上述形成改質鍍膜時包含形成複數個氫氧官能基於改質鍍膜之表面上。 According to an embodiment of the present invention, the forming of the modified coating film includes forming a plurality of hydrogen-based functional groups on the surface of the modified coating film.
依據本發明之一實施例,上述進行烘烤製程時包含將烘烤溫度控制在約50℃至約200℃。 According to an embodiment of the present invention, when the baking process is performed, the baking temperature is controlled to about 50 ° C to about 200 ° C.
依據本發明之一實施例,於形成改質鍍膜前,上述之提高抗汙膜之附著力的方法更包含對基板之表面進行大氣電漿清潔處理。 According to an embodiment of the present invention, before forming the modified plating film, the above-mentioned method for improving the adhesion of the antifouling film further includes performing an atmospheric plasma cleaning treatment on the surface of the substrate.
依據本發明之一實施例,於形成改質鍍膜後,上述之提高抗汙膜之附著力的方法更包含對改質鍍膜進行大氣電漿改質處理,以在改質鍍膜之表面上形成複數個氫氧官能基。 According to an embodiment of the present invention, after the modified coating is formed, the method for improving the adhesion of the anti-fouling film further includes performing atmospheric plasma modification treatment on the modified coating to form a plurality on the surface of the modified coating. Hydroxyl functional groups.
依據本發明之一實施例,上述之改質鍍膜之厚度等於或小於約100奈米。 According to an embodiment of the present invention, the thickness of the modified coating film is equal to or less than about 100 nm.
100‧‧‧步驟 100‧‧‧ steps
110‧‧‧步驟 110‧‧‧step
120‧‧‧步驟 120‧‧‧ steps
130‧‧‧步驟 130‧‧‧ steps
140‧‧‧步驟 140‧‧‧step
150‧‧‧步驟 150‧‧‧ steps
200‧‧‧基板 200‧‧‧ substrate
202‧‧‧表面 202‧‧‧ surface
210‧‧‧大氣電漿 210‧‧‧ Atmospheric plasma
220‧‧‧改質鍍膜 220‧‧‧ Modified Coating
220t‧‧‧厚度 220t‧‧‧thickness
222‧‧‧表面 222‧‧‧ surface
230‧‧‧大氣電漿 230‧‧‧ Atmospheric Plasma
240‧‧‧氫氧官能基 240‧‧‧ Hydroxyl functional group
250‧‧‧抗汙分子 250‧‧‧ antifouling molecules
260‧‧‧抗汙膜 260‧‧‧Antifouling film
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:〔圖1〕係繪示依照本發明之一實施方式的一種提高抗汙膜之附著力的方法的流程圖;〔圖2A〕至〔圖2F〕係繪示依照本發明之一實施方式的一種提高抗汙膜之附著力的製程剖面圖;以及〔圖3〕係繪示利用本發明之一實施方式的一種抗汙膜之製造方法所製作之抗汙膜與傳統方法所製作之抗汙膜的耐磨測試結果的柱狀比較圖。 In order to make the above and other objects, features, advantages, and embodiments of the present invention more comprehensible, the description of the attached drawings is as follows: [Fig. 1] An improved antifouling film according to an embodiment of the present invention [Fig. 2A] to [Fig. 2F] are sectional views showing a process for improving the adhesion of an antifouling film according to an embodiment of the present invention; and [Fig. 3] are drawings A columnar comparison chart of the results of abrasion resistance test of an antifouling film made by a method of manufacturing an antifouling film according to an embodiment of the present invention and an antifouling film made by a conventional method.
發明人利用真空蒸鍍技術在玻璃表面上鍍覆抗汙膜時,先將清洗乾淨的玻璃基板置放於承載治具上,再將承載治具連同其上的玻璃基板放入真空腔室。接著,以電漿清潔玻璃基板的表面,而後利用真空蒸鍍方式在基板之表面上形成單分子抗汙膜。為了提高單分子抗汙膜對基板的附著力,發明人在蒸鍍抗汙膜之前先在基板之表面上鍍覆一層二氧化矽膜,之後才蒸鍍單分子抗汙膜於此二氧化矽膜上。發明人發現雖然這樣的鍍膜製程可形成不影響基板之原有光 學特性的抗汙膜,且也可以應用在玻璃以外的基板上,但真空蒸鍍製程的成本相對較高,尤其是當基板面積較大時在成本上更加沒有競爭力。此外,對於一些材質的基板,抽真空處理比較困難,且真空蒸鍍製程不適合運用在結構複雜之基板的鍍膜上,應用性也因此而受限。 When the inventor uses a vacuum evaporation technology to plate an antifouling film on a glass surface, the cleaned glass substrate is first placed on a carrier fixture, and then the carrier fixture and the glass substrate thereon are placed in a vacuum chamber. Next, the surface of the glass substrate is cleaned with a plasma, and then a single-molecule antifouling film is formed on the surface of the substrate by a vacuum evaporation method. In order to improve the adhesion of the monomolecular antifouling film to the substrate, the inventor first coated a layer of silicon dioxide film on the surface of the substrate before evaporating the antifouling film, and then evaporated the monomolecular antifouling film on the silicon dioxide. Film. The inventors found that although such a coating process can form an antifouling film that does not affect the original optical characteristics of the substrate, and can also be applied to substrates other than glass, the cost of the vacuum evaporation process is relatively high, especially when the substrate area When it is larger, it is more uncompetitive in cost. In addition, for some substrates, vacuum processing is difficult, and the vacuum evaporation process is not suitable for coating on substrates with complicated structures, which limits its applicability.
有鑑於此,發明人提出一種提高抗汙膜之附著力的方法,其可在非玻璃的基板或待鍍膜之表面不具有氧化矽層的基板上,以例如大氣電漿沉積方式形成改質鍍膜,並在改質鍍膜上形成許多氫氧官能基,藉此後續塗布的抗汙分子可與這些氫氧官能基鍵結,而形成穩固附著在改質鍍膜的抗汙膜上。因此,本發明之方法可克服單分子抗汙層難以應用於非玻璃材質之基板上的問題,且本方法的應用可在大幅降低製程成本的情況下,有效提高抗汙膜對基板的附著力。 In view of this, the inventor proposes a method for improving the adhesion of an antifouling film, which can form a modified coating on a non-glass substrate or a substrate without a silicon oxide layer on the surface to be coated, for example, by atmospheric plasma deposition. Many hydroxyl functional groups are formed on the modified coating film, so that the subsequent anti-fouling molecules can be bonded to these hydroxyl functional groups to form a solid anti-fouling film that is firmly attached to the modified coating film. Therefore, the method of the present invention can overcome the problem that the single-molecule antifouling layer is difficult to apply to substrates made of non-glass materials, and the application of the method can effectively improve the adhesion of the antifouling film to the substrate while greatly reducing the process cost. .
請參照圖1以及圖2A至圖2F,其中圖1係繪示依照本發明之一實施方式的一種係繪示依照本發明之一實施方式的一種提高抗汙膜之附著力的方法的流程圖,圖2A至圖2F係繪示依照本發明之一實施方式的一種提高抗汙膜之附著力的製程剖面圖。在本實施方式中,先進行步驟100,以提供基板200。如圖2A所示,基板200具有至少一欲鍍膜的表面202。在一些例子中,基板200為一非玻璃基板、或其欲鍍膜的表面202不具氧化矽(SiOx)層的基板。舉例而言,基板200可為塑膠基板或金屬基板,例如鋁合金基板、氮化鉻(CrN)基板、不鏽鋼基板、或表面鍍有裝飾鉻的基板。 Please refer to FIG. 1 and FIGS. 2A to 2F. FIG. 1 is a flowchart illustrating a method for improving the adhesion of an antifouling film according to an embodiment of the present invention. FIGS. 2A to 2F are cross-sectional views of a process for improving the adhesion of an antifouling film according to an embodiment of the present invention. In this embodiment, step 100 is first performed to provide a substrate 200. As shown in FIG. 2A, the substrate 200 has at least one surface 202 to be coated. In some examples, the substrate 200 is a non-glass substrate, or a substrate having a surface 202 to be coated without a silicon oxide (SiO x ) layer. For example, the substrate 200 may be a plastic substrate or a metal substrate, such as an aluminum alloy substrate, a chromium nitride (CrN) substrate, a stainless steel substrate, or a substrate plated with decorative chromium.
接著,在一些例子中,可選擇性地進行步驟110,以在鍍膜前先清潔基板200之欲鍍膜的表面202。舉例而言,如圖2B所示,可對基板200之表面202進行大氣電漿清潔處理,以利用大氣電漿210來清潔基板200之表面202上的油汙與髒汙。形成大氣電漿210所採用之電漿工作氣體可例如為空氣、氮氣(N2)、或氮氣與空氣或氧氣(O2)的組合、氬氣(Ar)、或氬氣與空氣或氧氣的組合。舉例而言,可利用噴射式電漿技術、絕緣障蔽式放電(dielectric barrier discharge,DBD)電漿技術、或高週波(RF)電漿技術來產生大氣電漿210。 Next, in some examples, step 110 may be selectively performed to clean the surface 202 of the substrate 200 to be coated before coating. For example, as shown in FIG. 2B, an atmospheric plasma cleaning treatment may be performed on the surface 202 of the substrate 200 to use the atmospheric plasma 210 to clean oil and dirt on the surface 202 of the substrate 200. The plasma working gas used to form the atmospheric plasma 210 may be, for example, air, nitrogen (N 2 ), or a combination of nitrogen and air or oxygen (O 2 ), argon (Ar), or argon and air or oxygen. combination. For example, the atmospheric plasma 210 may be generated by using a spray plasma technology, a dielectric barrier discharge (DBD) plasma technology, or a high frequency (RF) plasma technology.
在一些特定例子中,當基板200具有乾淨的表面202的情況下,可省略上述步驟110,而無須先對基板200之表面202進行清潔處理。 In some specific examples, when the substrate 200 has a clean surface 202, the above-mentioned step 110 may be omitted without first performing a cleaning process on the surface 202 of the substrate 200.
接下來,進行步驟120,以形成改質鍍膜220覆蓋在基板200之表面202上,如圖2C所示。形成改質鍍膜220時可包含使用前驅物,且此前驅物包含矽碳氧分子。在一些例子中,可利用大氣電漿沉積製程來形成改質鍍膜220。此大氣電漿沉積製程中所採用的前驅物包含含矽碳氧分子的氣體或液體。改質鍍膜220為一層類玻璃層,而可包含大量的氧化矽(SiOx)。舉例而言,改質鍍膜220包含二氧化矽、氧化矽、及/或碳氧化矽。在一些示範例子中,改質鍍膜220之厚度220t等於或小於約100奈米,以避免影響基板200原有的光學性質。此外,可利用噴射式電漿沉積技術、絕緣障蔽式放電電漿沉積技術、或高週波電漿沉積技術 來形成改質鍍膜220。在本發明中,可根據基板200之材質的不同,而選用不同的前驅物來提升改質鍍膜220的附著力。 Next, step 120 is performed to form a modified plating film 220 covering the surface 202 of the substrate 200, as shown in FIG. 2C. Forming the modified coating film 220 may include using a precursor, and the precursor includes silicon carbon oxygen molecules. In some examples, the atmospheric plasma deposition process may be used to form the modified coating film 220. The precursor used in the atmospheric plasma deposition process includes a gas or liquid containing silicon carbon oxygen molecules. The modified coating film 220 is a glass-like layer, and may include a large amount of silicon oxide (SiO x ). For example, the modified coating film 220 includes silicon dioxide, silicon oxide, and / or silicon oxycarbide. In some exemplary examples, the thickness 220t of the modified coating film 220 is equal to or less than about 100 nanometers to avoid affecting the original optical properties of the substrate 200. In addition, the modified plating film 220 may be formed by using a spray plasma deposition technology, an insulation barrier discharge plasma deposition technology, or a high-frequency plasma deposition technology. In the present invention, different precursors may be selected to improve the adhesion of the modified plating film 220 according to the material of the substrate 200.
由於改質鍍膜220係利用大氣電漿沉積製程來製作,而非採用真空製程,因此不僅可大大的降低製程成本,且可選用的基板200材質也更多元,亦可適用於具複雜結構之基板200上,具有較廣泛的應用性。 Since the modified coating 220 is produced by an atmospheric plasma deposition process instead of a vacuum process, not only can the process cost be greatly reduced, but the optional substrate 200 material is also more yuan, and it can also be applied to complex structures. The substrate 200 has a wide range of applications.
如圖2D所示,在一些例子中,於改質鍍膜220形成後,可選擇性地進行步驟130,以對改質鍍膜220的表面222進行大氣電漿改質處理,而利用大氣電漿230在改質鍍膜220的表面222上形成許多氫氧官能基240,藉以活化改質鍍膜220的表面222。產生大氣電漿230所採用之電漿工作氣體可例如為空氣、氮氣、或氮氣與空氣或氧氣的組合、氬氣、或氬氣與空氣或氧氣的組合。在一些示範例子中,可利用噴射式電漿沉積技術、絕緣障蔽式放電電漿沉積技術、或高週波電漿沉積技術來對改質鍍膜220的表面222進行大氣電漿改質處理。 As shown in FIG. 2D, in some examples, after the modified coating film 220 is formed, step 130 may be selectively performed to perform an atmospheric plasma modification treatment on the surface 222 of the modified coating film 220, and the atmospheric plasma 230 is used. A plurality of hydroxide functional groups 240 are formed on the surface 222 of the modified coating film 220 to activate the surface 222 of the modified coating film 220. The plasma working gas used to generate the atmospheric plasma 230 may be, for example, air, nitrogen, or a combination of nitrogen and air or oxygen, argon, or a combination of argon and air or oxygen. In some exemplary examples, spray plasma deposition technology, insulation barrier discharge plasma deposition technology, or high frequency plasma deposition technology may be used to perform atmospheric plasma modification treatment on the surface 222 of the modified coating film 220.
在一些特定例子中,於步驟120中,形成改質鍍膜220時可包含形成許多氫氧官能基240於改質鍍膜220的表面222上。在這樣的例子中,本實施方式可省略步驟130,而無須再對改質鍍膜220的表面222額外進行大氣電漿改質處理。 In some specific examples, in step 120, forming the modified coating film 220 may include forming a plurality of hydroxide functional groups 240 on the surface 222 of the modified coating film 220. In such an example, step 130 may be omitted in this embodiment, and it is not necessary to additionally perform atmospheric plasma modification treatment on the surface 222 of the modified coating film 220.
由於改質鍍膜220為類玻璃層,因此大氣電漿改質處理可以在改質鍍膜220之表面222上產生較多的氫氧 官能基。這樣富含氫氧官能基之改質鍍膜220之表面222有助於後續與單分子抗汙分子鍵結。 Since the modified coating film 220 is a glass-like layer, the atmospheric plasma modification treatment can generate more hydroxide functional groups on the surface 222 of the modified coating film 220. In this way, the surface 222 of the modified coating film 220 rich in oxygen functional groups is helpful for subsequent bonding with single-molecule antifouling molecules.
請同時參照圖1與圖2E,在改質鍍膜220之表面222上形成許多氫氧官能基後,進行步驟140,以塗布抗汙分子250於改質鍍膜220之表面222上。在一些例子中,抗汙分子250可包含氟碳矽烴類化合物、全氟碳矽烴類化合物、氟碳矽烷烴類化合物、全氟矽烷烴類化合物、或全氟矽烷烴醚類化合物。如圖2E所示,抗汙分子250具有氫氧鍵。 Please refer to FIG. 1 and FIG. 2E at the same time. After a plurality of hydroxide functional groups are formed on the surface 222 of the modified coating film 220, step 140 is performed to coat the antifouling molecules 250 on the surface 222 of the modified coating film 220. In some examples, the antifouling molecule 250 may include a fluorocarbon silane-based compound, a perfluorocarbon silane-based compound, a fluorocarbon silane-based compound, a perfluorosilane-based compound, or a perfluorosilane-based ether compound. As shown in FIG. 2E, the antifouling molecule 250 has a hydrogen-oxygen bond.
隨後,進行步驟150,以進行烘烤製程。因此,如圖2F所示,在烘烤製程中,抗汙分子250之氫氧鍵可與改質鍍膜220之表面222上的氫氧官能基鍵結,且水分子可被移除,而可使抗汙分子250順利鍵結並附著在改質鍍膜220之表面222上,進而在改質鍍膜220之表面222上形成抗汙膜260。在一些示範例子中,進行烘烤製程時可將烘烤溫度控制在約50℃至約200℃。此抗汙膜260可為單分子層抗汙膜。 Subsequently, step 150 is performed to perform a baking process. Therefore, as shown in FIG. 2F, during the baking process, the hydrogen-oxygen bond of the anti-fouling molecule 250 can be bonded to the hydroxyl-functional group on the surface 222 of the modified coating film 220, and the water molecule can be removed, and the The antifouling molecules 250 are smoothly bonded and attached to the surface 222 of the modified plating film 220, and an antifouling film 260 is formed on the surface 222 of the modified plating film 220. In some exemplary examples, the baking temperature may be controlled at about 50 ° C to about 200 ° C during the baking process. This antifouling film 260 may be a monomolecular layer antifouling film.
由於改質鍍膜220為類玻璃層且包含大量的氧化矽(SiOx),因此經大氣電漿改質處理改質活化後,改質鍍膜220之表面222形成有大量的氫氧官能基。藉此,抗汙分子250可與改質鍍膜220順利鍵結,進而可有效提升所形成之抗汙膜260對基板200上之改質鍍膜220的附著力。 Since the coating 220 is modified based glass layer and contains a large amount of silicon oxide (SiO x), and therefore the atmosphere after plasma activation modified the modified process, the surface modification coating 220 222 a large number of hydroxyl functional groups. Thereby, the antifouling molecules 250 can be smoothly bonded to the modified coating film 220, and the adhesion of the formed antifouling film 260 to the modified coating film 220 on the substrate 200 can be effectively improved.
請參照圖3,其係繪示利用本發明之一實施方式的一種抗汙膜之製造方法所製作之抗汙膜與傳統方法所製作之抗汙膜的耐磨測試結果的柱狀比較圖。本實施例係利用 大氣電漿沉積製程先在鋁合金基板、表面鍍有裝飾鉻的基板、氮化鉻基板、以及不鏽鋼基板上形成改質鍍膜後,再於改質鍍膜之表面上形成抗汙膜;而比較例則是未形成改質鍍膜,且係直接形成抗汙膜於鋁合金基板、表面鍍有裝飾鉻的基板、氮化鉻基板、以及不鏽鋼基板的表面上。此耐磨測試係採用無塵布對本發明之實施例之抗汙膜與比較例之抗汙膜進行壓力為1kg/cm2的耐磨性測試。由圖3可知,本發明之實施例的抗汙膜在不同基板上的耐磨次數均遠高於比較例的抗汙膜。因此,本實施例的應用確實可有效提高抗汙膜對基板的附著力。 Please refer to FIG. 3, which is a bar chart comparing the results of abrasion resistance test of an antifouling film produced by a method of manufacturing an antifouling film according to an embodiment of the present invention and an antifouling film produced by a conventional method. This embodiment uses an atmospheric plasma deposition process to first form a modified coating on an aluminum alloy substrate, a substrate plated with decorative chromium, a chromium nitride substrate, and a stainless steel substrate, and then form an antifouling on the surface of the modified coating. In the comparative example, no modified coating was formed, and an antifouling film was directly formed on the surface of an aluminum alloy substrate, a substrate plated with decorative chromium, a chromium nitride substrate, and a stainless steel substrate. This abrasion resistance test is a wear resistance test using a dust-free cloth on the antifouling film of the embodiment of the present invention and the antifouling film of the comparative example at a pressure of 1 kg / cm 2 . As can be seen from FIG. 3, the anti-fouling film of the embodiment of the present invention has far higher abrasion resistance times on different substrates than the anti-fouling film of the comparative example. Therefore, the application of this embodiment can effectively improve the adhesion of the antifouling film to the substrate.
由上述之實施方式可知,本發明之一優點就是因為本發明之提高抗汙膜之附著力的方法可在非玻璃基板、或其欲鍍膜表面不具有氧化矽(SiOx)層之基板上形成以氧化矽(SiOx)為主的改質鍍膜。藉此,可使氫氧官能基順利形成在改質鍍膜之表面上。抗汙分子可與改質鍍膜之表面上的氫氧官能基產生鍵結,而可順利形成穩固地附著於改質鍍膜上的抗汙膜,藉此可達到提高抗汙膜對基板之附著力的效果。 It can be known from the above embodiments that one of the advantages of the present invention is that the method for improving the adhesion of an antifouling film of the present invention can be formed on a non-glass substrate or a substrate on which the surface to be coated does not have a silicon oxide (SiO x ) layer. Modified coating based on silicon oxide (SiO x ). Thereby, the hydroxyl functional group can be smoothly formed on the surface of the modified plating film. Antifouling molecules can bond with the hydroxyl functional groups on the surface of the modified coating film, and can form smoothly an antifouling film firmly attached to the modified coating film, thereby improving the adhesion of the antifouling film to the substrate Effect.
由上述之實施方式可知,本發明之另一優點就是因為本發明之提高抗汙膜之附著力的方法可利用大氣電漿製程來沉積抗汙膜,因此相較於真空鍍膜製程,本方法可大幅降低製程成本。 It can be known from the above embodiments that another advantage of the present invention is that the method for improving the adhesion of an antifouling film of the present invention can use an atmospheric plasma process to deposit an antifouling film. Therefore, compared with the vacuum coating process, the method can Significantly reduce process costs.
由上述之實施方式可知,本發明之又一優點就是因為本發明之提高抗汙膜之附著力的方法係採用大氣電 漿沉積製程來形成改質鍍膜,因此可應用於結構複雜的基板,且可適用於各種材質之基板的鍍膜上,具有極廣泛的應用性。 It can be known from the foregoing embodiments that another advantage of the present invention is that the method for improving the adhesion of an antifouling film of the present invention adopts an atmospheric plasma deposition process to form a modified plating film, so it can be applied to a substrate with a complicated structure, and It can be applied to the coating of substrates of various materials and has a wide range of applications.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何在此技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed as above by way of example, it is not intended to limit the present invention. Any person with ordinary knowledge in this technical field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the appended patent application.
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| CN105018928B (en) * | 2014-04-18 | 2019-03-29 | 傅榆 | Coating method for nanometer surface coating on special-shaped metal |
| KR20170057371A (en) * | 2014-09-22 | 2017-05-24 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Internal combustion engine components with anti-fouling properties and methods of making same |
| TWI573170B (en) * | 2015-06-10 | 2017-03-01 | 馗鼎奈米科技股份有限公司 | Coating module, coating system and fabricating method of anti-smudge film |
| CN204833201U (en) * | 2015-06-18 | 2015-12-02 | 无锡启晖光电科技有限公司 | Antifouling membrane that touch -sensitive screen is anti -reflection |
| DE102015111918A1 (en) * | 2015-07-17 | 2017-01-19 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Current collector, membrane unit, electrochemical cell, method for producing a current collector, a membrane unit and an electrochemical cell |
| TW201709775A (en) * | 2015-08-25 | 2017-03-01 | 馗鼎奈米科技股份有限公司 | Arc atmospheric pressure plasma device |
| CN106676457A (en) * | 2016-11-23 | 2017-05-17 | 东莞珂洛赫慕电子材料科技有限公司 | Preparation method for plasma spraying electric heating device dielectric layer |
-
2018
- 2018-05-09 TW TW107115796A patent/TWI668320B/en active
- 2018-06-13 CN CN201810609062.0A patent/CN110465203A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN110465203A (en) | 2019-11-19 |
| TWI668320B (en) | 2019-08-11 |
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