TW201933617A - Solar cell - Google Patents
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- TW201933617A TW201933617A TW107101354A TW107101354A TW201933617A TW 201933617 A TW201933617 A TW 201933617A TW 107101354 A TW107101354 A TW 107101354A TW 107101354 A TW107101354 A TW 107101354A TW 201933617 A TW201933617 A TW 201933617A
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- 238000002161 passivation Methods 0.000 claims abstract description 48
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims description 22
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910004140 HfO Inorganic materials 0.000 claims description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
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- 229910004205 SiNX Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
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- 230000003287 optical effect Effects 0.000 description 4
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
Description
本發明是有關於一種太陽能電池(solar cell)的技術，且特別是有關於一種異質接面的太陽能電池。The present invention relates to a solar cell technology, and more particularly to a heterojunction solar cell.
現今開發中的穿隧型太陽能電池如異質接面矽太陽能電池屬於一種高效率太陽能電池，其發電量能大幅提升，以降低發電成本。Today's development of tunneling solar cells, such as heterojunction solar cells, is a high-efficiency solar cell, and its power generation capacity can be greatly increased to reduce power generation costs.
以一般的異質接面矽太陽能電池來說，在製造過程中為了導電，會在作為鈍化層的多晶矽表面形成透明導電(transparent conductive oxide layer, TCO)層，但是TCO層的沉積對多晶矽的表面會造成損傷，反而使得鈍化效果降低。因此目前為了避免上述問題，會在多晶矽表面先形成一層緩衝層。然而，形成此緩衝層的設備不同於沉積TCO層的設備，所以會增加設備成本。In the case of a general heterojunction solar cell, in order to conduct electricity during the manufacturing process, a transparent conductive oxide layer (TCO) layer is formed on the surface of the polycrystalline silicon as a passivation layer, but the deposition of the TCO layer on the surface of the polycrystalline silicon Damage is caused, but the passivation effect is reduced. Therefore, in order to avoid the above problems, a buffer layer is first formed on the surface of the polycrystalline silicon. However, the device forming this buffer layer is different from the device for depositing the TCO layer, so the equipment cost is increased.
因此，需要尋求一種既可降低TCO層沉積時對多晶矽所造成的損傷，還能提升電池整體效率的太陽能電池。Therefore, there is a need to find a solar cell that can reduce the damage caused by polycrystalline germanium during deposition of the TCO layer and also improve the overall efficiency of the battery.
本發明提供一種太陽能電池，具有能兼顧光的吸收與鈍化效果的結構，並能進一步提升其短路電流、開路電壓以及轉換效率。The present invention provides a solar cell having a structure capable of achieving both light absorption and passivation effects, and further improving short-circuit current, open circuit voltage, and conversion efficiency.
本發明的太陽能電池，包括一光電轉換層、一摻雜層、一第一鈍化層、一第一透明導電層、一正面電極與一背面電極。摻雜層位於光電轉換層的正面。第一鈍化層位於摻雜層上，第一鈍化層具有多個開孔，開孔暴露出部分摻雜層。第一透明導電層則位於第一鈍化層上與開孔中，且經由開孔直接與暴露出的摻雜層接觸，其中所有開孔的面積與第一透明導電層的面積的比為0.01~0.5。正面電極位於第一透明導電層上，背面電極則位於光電轉換層的背面。The solar cell of the present invention comprises a photoelectric conversion layer, a doped layer, a first passivation layer, a first transparent conductive layer, a front electrode and a back electrode. The doped layer is located on the front side of the photoelectric conversion layer. The first passivation layer is on the doped layer, and the first passivation layer has a plurality of openings, and the openings expose a portion of the doped layer. The first transparent conductive layer is located on the first passivation layer and the opening, and is directly in contact with the exposed doped layer via the opening, wherein the ratio of the area of all the openings to the area of the first transparent conductive layer is 0.01~ 0.5. The front electrode is on the first transparent conductive layer, and the back electrode is on the back side of the photoelectric conversion layer.
在本發明的一實施例中，上述摻雜層的材料包括摻雜的多晶矽、摻雜的非晶矽或摻雜的單晶矽。In an embodiment of the invention, the material of the doped layer comprises doped polysilicon, doped amorphous germanium or doped single crystal germanium.
在本發明的一實施例中，上述第一鈍化層的材料包括SiNx 、SiONSiO2 、Al2 O3 、HfO2 、ZrO2 或a-Si，其中x≦4/3。In an embodiment of the invention, the material of the first passivation layer comprises SiN x , SiONSiO 2 , Al 2 O 3 , HfO 2 , ZrO 2 or a-Si, wherein x≦4/3.
在本發明的一實施例中，上述第一鈍化層的厚度為10 nm~100 nm之間。In an embodiment of the invention, the first passivation layer has a thickness between 10 nm and 100 nm.
在本發明的一實施例中，上述太陽能電池還可包括一第一穿隧層，位於光電轉換層與摻雜層之間。In an embodiment of the invention, the solar cell may further include a first tunneling layer between the photoelectric conversion layer and the doped layer.
在本發明的一實施例中，上述第一穿隧層的材料包括氧化矽、氮氧化矽、氧化鋁或氮化矽。In an embodiment of the invention, the material of the first tunneling layer comprises cerium oxide, cerium oxynitride, aluminum oxide or tantalum nitride.
在本發明的一實施例中，上述太陽能電池還可包括一本質非晶矽層，位於光電轉換層與摻雜層之間。In an embodiment of the invention, the solar cell may further include an intrinsic amorphous germanium layer between the photoelectric conversion layer and the doped layer.
在本發明的一實施例中，上述正面電極的材料包括金屬。In an embodiment of the invention, the material of the front electrode includes a metal.
在本發明的一實施例中，上述背面電極包括一第二透明導電層及一金屬電極，且第二透明導電層位於光電轉換層與金屬電極之間。In an embodiment of the invention, the back electrode includes a second transparent conductive layer and a metal electrode, and the second transparent conductive layer is between the photoelectric conversion layer and the metal electrode.
在本發明的一實施例中，上述太陽能電池還可包括一第二穿隧層，位於光電轉換層的背面與第二透明導電層之間。In an embodiment of the invention, the solar cell may further include a second tunneling layer between the back surface of the photoelectric conversion layer and the second transparent conductive layer.
在本發明的一實施例中，上述第二穿隧層的材料包括氧化矽、氮氧化矽、氧化鋁或氮化矽。In an embodiment of the invention, the material of the second tunneling layer comprises cerium oxide, cerium oxynitride, aluminum oxide or tantalum nitride.
在本發明的一實施例中，上述太陽能電池還可包括一第二鈍化層，位於第二穿隧層與第二透明導電層之間。In an embodiment of the invention, the solar cell may further include a second passivation layer between the second tunneling layer and the second transparent conductive layer.
在本發明的一實施例中，上述第二鈍化層的材料包括SiNx 、SiON、SiO2 、Al2 O3 、HfO2 、ZrO2 或a-Si，其中x≦4/3。In an embodiment of the invention, the material of the second passivation layer comprises SiN x , SiON, SiO 2 , Al 2 O 3 , HfO 2 , ZrO 2 or a-Si, wherein x≦4/3.
在本發明的一實施例中，上述光電轉換層的材料包括碳化矽（SiC）、矽（Si）、硫化鎘、銅銦鎵二硒、銅銦二硒、碲化鎘或有機材料。In an embodiment of the invention, the material of the photoelectric conversion layer comprises tantalum carbide (SiC), bismuth (Si), cadmium sulfide, copper indium gallium diselenide, copper indium diselenide, cadmium telluride or an organic material.
基於上述，本發明藉由具有開孔的鈍化層以及開孔與透明導電層的特定面積比，來提升鈍化效果與增加短路電流，進而提升太陽能電池的整體效率。Based on the above, the present invention enhances the passivation effect and increases the short-circuit current by the passivation layer having the opening and the specific area ratio of the opening and the transparent conductive layer, thereby improving the overall efficiency of the solar cell.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
請參考以下實施例及隨附圖式，以便更充分地了解本發明，但是本發明仍可以藉由多種不同形式來實踐，且不應將其解釋為限於本文所述之實施例。而在圖式中，為求明確起見對於各構件以及其相對尺寸可能未按實際比例繪製。The invention is further described in the following examples and the accompanying drawings, but the invention may be practiced in many different forms and should not be construed as being limited to the embodiments described herein. In the drawings, for the sake of clarity, the components and their relative sizes may not be drawn to the actual scale.
圖1A是依照本發明的一實施例的一種太陽能電池的示意圖。1A is a schematic diagram of a solar cell in accordance with an embodiment of the present invention.
請參照圖1A，本實施例的太陽能電池100至少包括一光電轉換層102、一摻雜層104、一第一鈍化層106、一第一透明導電層108、一正面電極110與一背面電極112。光電轉換層102具有正面102a和背面102b，其中光電轉換層102的材料例如是碳化矽（SiC）、矽（Si）、硫化鎘、銅銦鎵二硒、銅銦二硒、碲化鎘或有機材料。摻雜層104位於光電轉換層102的正面102a，其中摻雜層104的材料例如是摻雜的多晶矽、摻雜的非晶矽或摻雜的單晶矽。摻雜層104所摻雜的元素例如三價的鋁、硼、鎵等；或五價的砷、磷、銻等。Referring to FIG. 1A , the solar cell 100 of the present embodiment includes at least a photoelectric conversion layer 102 , a doped layer 104 , a first passivation layer 106 , a first transparent conductive layer 108 , a front surface electrode 110 , and a back surface electrode 112 . . The photoelectric conversion layer 102 has a front surface 102a and a back surface 102b, wherein the material of the photoelectric conversion layer 102 is, for example, tantalum carbide (SiC), germanium (Si), cadmium sulfide, copper indium gallium diselenide, copper indium diselenide, cadmium telluride or organic material. The doped layer 104 is located on the front side 102a of the photoelectric conversion layer 102, wherein the material of the doped layer 104 is, for example, doped polysilicon, doped amorphous germanium or doped single crystal germanium. The doped layer 104 is doped with an element such as trivalent aluminum, boron, gallium or the like; or pentavalent arsenic, phosphorus, antimony or the like.
在圖1A中，第一鈍化層106位於摻雜層104上方，而且第一鈍化層106具有多個開孔106a，其中第一鈍化層106的厚度T約數十奈米，例如在10 nm~100 nm之間；在另一實施例中，第一鈍化層106的厚度T在30 nm~55 nm之間。第一鈍化層106的材料例如是SiNx 、SiON、SiO2 、Al2 O3 、HfO2 、ZrO2 或非晶矽(a-Si），其中x≦4/3。而且各個開孔106a暴露出部分摻雜層104。In FIG. 1A, the first passivation layer 106 is located above the doped layer 104, and the first passivation layer 106 has a plurality of openings 106a, wherein the thickness T of the first passivation layer 106 is about several tens of nanometers, for example, at 10 nm~ Between 100 nm; in another embodiment, the first passivation layer 106 has a thickness T between 30 nm and 55 nm. The material of the first passivation layer 106 is, for example, SiN x , SiON, SiO 2 , Al 2 O 3 , HfO 2 , ZrO 2 or amorphous germanium (a-Si), where x≦4/3. Moreover, each of the openings 106a exposes a portion of the doped layer 104.
在本實施例中，第一透明導電(transparent conductive oxide, TCO)層108位於第一鈍化層106上方，其中第一透明導電層108的材料例如是銦錫氧化物(indium tin oxide, ITO)、銦鋅氧化物(indium zinc oxide, IZO)、氧化鋁鋅(Al doped ZnO, AZO)、摻鎵氧化鋅(Ga doped zinc oxide, GZO)、氧化銦(In2 O3 )、氧化鋅(ZnO)、二氧化鈦(TiO2 )、二氧化錫(SnO2 )或是其他透明導電材料。而且第一透明導電層108穿過各個開孔106a直接與暴露出的摻雜層104接觸。在本實施例中，所有開孔106a的面積與第一透明導電層108的面積比為0.01~0.5，當前述面積比在0.01以上時，能降低沉積第一透明導電層108所使用的電漿對摻雜層104轟擊的傷害；當前述面積比在0.5以下，能確保太陽能電池100的短路電流增加。在本文中，所謂的「面積比」是指開孔106a的面積的總和除以第一透明導電層108的面積。正面電極110位於第一透明導電層108上，其中正面電極110為金屬電極，例如鋁、銀、鉬、金、鉑、鎳或銅等，其可藉由濺鍍製程、電鍍或塗佈製程(如網印)形成。而背面電極112則位於光電轉換層102的背面102b。In this embodiment, a first transparent conductive oxide (TCO) layer 108 is located above the first passivation layer 106, wherein the material of the first transparent conductive layer 108 is, for example, indium tin oxide (ITO). Indium zinc oxide (IZO), aluminum doped ZnO (AZO), gallium doped zinc oxide (GZO), indium oxide (In 2 O 3 ), zinc oxide (ZnO) Titanium dioxide (TiO 2 ), tin dioxide (SnO 2 ) or other transparent conductive materials. Moreover, the first transparent conductive layer 108 is in direct contact with the exposed doped layer 104 through the respective openings 106a. In this embodiment, the area ratio of the area of all the openings 106a to the first transparent conductive layer 108 is 0.01 to 0.5, and when the area ratio is 0.01 or more, the plasma used for depositing the first transparent conductive layer 108 can be reduced. Damage to the bombardment of the doped layer 104; when the aforementioned area ratio is 0.5 or less, the short-circuit current of the solar cell 100 can be ensured to increase. Herein, the "area ratio" means the sum of the areas of the openings 106a divided by the area of the first transparent conductive layer 108. The front electrode 110 is located on the first transparent conductive layer 108, wherein the front electrode 110 is a metal electrode, such as aluminum, silver, molybdenum, gold, platinum, nickel or copper, which can be processed by a sputtering process, a plating process or a coating process ( Such as screen printing). The back surface electrode 112 is located on the back surface 102b of the photoelectric conversion layer 102.
請繼續參照圖1A，本實施例是以穿隧太陽能電池為例，因此於光電轉換層102與摻雜層104之間還可具有一第一穿隧層114，其材料例如氧化矽（SiO2 ）、氮氧化矽（SiON）、氧化鋁（Al2 O3 ）或氮化矽（SiN），且摻雜層104為摻雜多晶矽層。然而，本發明並不限於此，如圖1B所示的是本實施例的一種變形例。圖1B與圖1A的結構差異在於，光電轉換層102與摻雜層104之間的是一本質非晶矽層116，且摻雜層104為摻雜非晶矽層，其中摻雜層104所摻雜的元素例如三價的鋁、硼、鎵等；或五價的砷、磷、銻等。也就是說，本發明的光電轉換層102與摻雜層104之間的結構能依照需求作變更，不限於圖1A或者圖1B所示的內容。Continuing to refer to FIG. 1A , the present embodiment is an example of a tunneling solar cell. Therefore, a first tunneling layer 114 may be further disposed between the photoelectric conversion layer 102 and the doping layer 104, such as yttria (SiO 2 ). ), cerium oxynitride (SiON), aluminum oxide (Al 2 O 3 ) or tantalum nitride (SiN), and the doped layer 104 is a doped polysilicon layer. However, the present invention is not limited thereto, and a modification of the embodiment is shown in Fig. 1B. The difference between the structure of FIG. 1B and FIG. 1A is that between the photoelectric conversion layer 102 and the doped layer 104 is an intrinsic amorphous germanium layer 116, and the doped layer 104 is a doped amorphous germanium layer, wherein the doped layer 104 is Doped elements such as trivalent aluminum, boron, gallium, etc.; or pentavalent arsenic, phosphorus, antimony, and the like. That is, the structure between the photoelectric conversion layer 102 and the doping layer 104 of the present invention can be changed as needed, and is not limited to the contents shown in FIG. 1A or FIG. 1B.
請繼續參照圖1A，背面電極112例如第二透明導電層118和金屬電極120的組合，其中第二透明導電層118位於光電轉換層102與金屬電極120之間，第二透明導電層118的材料可以和第一透明導電層108相同或不同，且金屬電極120的材料可和正面電極112相同或不同。此外，由於本實施例是以異質接面的穿隧太陽能電池為例，因此於光電轉換層102的背面102b與第二透明導電層118之間還可設有一第二穿隧層122，且第二穿隧層122的材料可和第一穿隧層114相同或不同，如氧化矽、氮氧化矽、氧化鋁或氮化矽。而在第二透明導電層118與第二穿隧層122之間還可設有一第二鈍化層124，以確保鈍化效果，且第二鈍化層124的材料可和第一鈍化層106相同或不同，如SiNx 、SiON、SiO2 、Al2 O3 、HfO2 、ZrO2 或a-Si，其中x≦4/3。Referring to FIG. 1A , a combination of the back surface electrode 112 , for example, the second transparent conductive layer 118 and the metal electrode 120 , wherein the second transparent conductive layer 118 is located between the photoelectric conversion layer 102 and the metal electrode 120 , and the material of the second transparent conductive layer 118 The same or different from the first transparent conductive layer 108, and the material of the metal electrode 120 may be the same as or different from the front electrode 112. In addition, since the embodiment is a tunneling solar cell with a heterojunction, a second tunneling layer 122 may be disposed between the back surface 102b of the photoelectric conversion layer 102 and the second transparent conductive layer 118, and The material of the second tunneling layer 122 may be the same as or different from the first tunneling layer 114, such as hafnium oxide, hafnium oxynitride, aluminum oxide or tantalum nitride. A second passivation layer 124 may be disposed between the second transparent conductive layer 118 and the second tunneling layer 122 to ensure a passivation effect, and the material of the second passivation layer 124 may be the same as or different from the first passivation layer 106. For example, SiN x , SiON, SiO 2 , Al 2 O 3 , HfO 2 , ZrO 2 or a-Si, where x ≦ 4/3.
以下列舉實驗來驗證本發明實施例的功效，但本發明的範圍並不侷限於以下內容。The following examples are provided to verify the efficacy of the embodiments of the present invention, but the scope of the present invention is not limited to the following.
〈模擬實驗一〉<Simulation experiment 1>
模擬實驗一的太陽能電池如圖1A所示，其中第一透明導電層以及背面電極中的第二透明導電層均為銦錫氧化物(indium tin oxide, ITO)、第一和第二鈍化層均為SiNx 、摻雜層為摻雜多晶矽、第一和第二穿隧層均為氧化矽（SiO2 ）、正面電極以及背面電極中的金屬電極皆為銀，改變開孔的面積與第一透明導電層的面積的比來進行模擬，以便分析面積比對太陽能電池的影響，結果顯示於圖2。The solar cell of the simulation experiment 1 is as shown in FIG. 1A, wherein the first transparent conductive layer and the second transparent conductive layer in the back electrode are both indium tin oxide (ITO), first and second passivation layers. The SiN x , the doped layer is doped polysilicon, the first and second tunneling layers are yttrium oxide (SiO 2 ), the front electrode and the metal electrode in the back electrode are all silver, changing the area of the opening and the first The ratio of the area of the transparent conductive layer was simulated to analyze the effect of the area ratio on the solar cell, and the results are shown in Fig. 2.
模擬的過程是先在未考量光學效應的情況下(無第一鈍化層；面積比為0)，模擬出的效率增加106%。The simulation process was first performed without considering the optical effect (no first passivation layer; area ratio is 0), and the simulated efficiency increased by 106%.
然後，若是在考量光學效應的情況下(有第一鈍化層；面積比如為0.05)，則開孔的貢獻(只有ITO當抗反射層)= 0.05×106%= 5.3%；非開孔區的貢獻(ITO與SiNx)= (1-0.05)×106%×95%/93.6%= 102.2%。因此，總效率增加：(5.3+102.2)%= 107.5%。Then, if the optical effect is considered (the first passivation layer; the area is, for example, 0.05), the contribution of the opening (only ITO as the antireflection layer) = 0.05 × 106% = 5.3%; non-apertured area Contribution (ITO and SiNx) = (1-0.05) × 106% × 95% / 93.6% = 102.2%. Therefore, the total efficiency increases: (5.3 + 102.2)% = 107.5%.
從圖2可以發現，當面積比在0.01以上，電池效率均有提升，而且當面積比在0.01~0.5之間有顯著的效率提升效果，如面積比為0.05時，電池效率提升的比率可高達107.5%。It can be found from Fig. 2 that when the area ratio is above 0.01, the battery efficiency is improved, and when the area ratio is between 0.01 and 0.5, there is a significant efficiency improvement effect. For example, when the area ratio is 0.05, the ratio of battery efficiency improvement can be as high as 107.5%.
〈模擬實驗二〉<Simulation Experiment 2>
以模擬實驗一的太陽能電池為模擬對象，並固定開孔的面積與第一透明導電層的面積的比為0.05。然後，第一透明導電層的厚度固定為40 nm，並改變第一鈍化層的厚度如下表1來進行如同模擬實驗一的模擬，結果同樣顯示於下表1。The solar cell of the simulation experiment 1 was used as a simulation object, and the ratio of the area of the fixed opening to the area of the first transparent conductive layer was 0.05. Then, the thickness of the first transparent conductive layer was fixed to 40 nm, and the thickness of the first passivation layer was changed as shown in Table 1 below, and the simulation was carried out as in the simulation experiment 1. The results are also shown in Table 1 below.
〈模擬比較例〉<simulation comparison example>
採用與模擬實驗二相同的模擬方式，但其中的太陽能電池並無第一鈍化層(SiNx)，而只改變第一透明導電層(ITO)的厚度作分析，結果顯示於下表2。The same simulation method as in the simulation experiment 2 was employed, but the solar cell therein did not have the first passivation layer (SiNx), and only the thickness of the first transparent conductive layer (ITO) was changed for analysis. The results are shown in Table 2 below.
表1總結了40 nm厚度的第一透明導電層(ITO)及不同厚度的第一鈍化層(SiNx)在反射的光電流百分比(JR )、ITO吸收所佔的百分比(JA )以及實際光電轉換層(矽基板)吸收的百分比(JG )的數值。Table 1 summarizes the percentage of photocurrent (J R ) reflected by the first transparent conductive layer (ITO) with a thickness of 40 nm and the first passivation layer (SiNx) of different thickness, the percentage of ITO absorption (J A ) and the actual The value of the percentage (J G ) absorbed by the photoelectric conversion layer (tantalum substrate).
表1
表2總結了不同厚度的第一透明導電層(ITO)在反射的光電流百分比(JR )、ITO吸收所佔的百分比(JA )以及實際矽基板吸收的百分比(JG )的數值。Table 2 summarizes the values of the percentage of photocurrent (J R ), the percentage of ITO absorption (J A ), and the percentage of actual ruthenium absorption (J G ) of the first transparent conductive layer (ITO) of different thicknesses.
表2
從上表1和表2可得到，模擬實驗二和模擬比較例之主要差異是在實際矽基板吸收率，模擬比較例約為92%~94%之間，模擬實驗二則是在94%以上，最佳可達到95%。而且，在相同厚度的條件下，例如表1中SiNx厚度40 nm(ITO厚度40nm)和表2中ITO厚度80 nm的結果，可以看到反射的光電流百分比及ITO吸收所佔的光電流百分比都明顯降低，使得效率提升到95.00%，整體增加了1.9%，此結果顯示本發明的結構在有具開孔的鈍化層的情況下，能提升電池轉換效率。From the above Table 1 and Table 2, the main difference between the simulation experiment 2 and the simulation comparison example is that the actual ruthenium substrate absorption rate is between 92% and 94% in the simulation comparison example, and the simulation experiment 2 is above 94%. , the best can reach 95%. Moreover, under the same thickness conditions, such as the SiNx thickness of 40 nm (ITO thickness 40 nm) in Table 1 and the ITO thickness of 80 nm in Table 2, the percentage of reflected photocurrent and the percentage of photocurrent occupied by ITO absorption can be seen. Both were significantly reduced, resulting in an efficiency increase of 95.00% and an overall increase of 1.9%. This result shows that the structure of the present invention can improve battery conversion efficiency in the case of a passivation layer having an opening.
〈實驗例〉<Experimental example>
實際製作一個模擬實驗一的太陽能電池，其中第一透明導電層(ITO)的厚度為40nm、第一鈍化層(SiNx )的厚度為40nm。然後實際量測形成ITO前、後的隱開路電壓(iVOC )和矽基板吸收率，結果顯示於下表3。A solar cell of a simulation experiment 1 was actually fabricated in which the thickness of the first transparent conductive layer (ITO) was 40 nm, and the thickness of the first passivation layer (SiN x ) was 40 nm. Then, the hidden open circuit voltage (iV OC ) before and after the formation of ITO and the absorptivity of the germanium substrate were actually measured, and the results are shown in Table 3 below.
〈比較例〉<Comparative example>
實際製作一個模擬比較例的太陽能電池，其中第一透明導電層(ITO)的厚度為65nm。然後實際量測形成ITO前、後的隱開路電壓(iVOC )和矽基板吸收率，結果顯示於下表3。A solar cell of a comparative comparative example was actually fabricated in which the thickness of the first transparent conductive layer (ITO) was 65 nm. Then, the hidden open circuit voltage (iV OC ) before and after the formation of ITO and the absorptivity of the germanium substrate were actually measured, and the results are shown in Table 3 below.
表3
從表3可以發現，本發明的結構擁有較好的鈍化效果與光學特性。It can be seen from Table 3 that the structure of the present invention has a good passivation effect and optical characteristics.
綜上所述，本發明藉由具有開孔的鈍化層以及開孔與透明導電層的特定面積比，不但可以降低電漿轟擊摻雜層所造成的傷害，也能具有改善鈍化效果、增加光學吸收的益處，還能因此使具有上述結構的太陽能電池能產生高轉換效率的功效。In summary, the present invention has a passivation layer having an opening and a specific area ratio of the opening and the transparent conductive layer, thereby not only reducing the damage caused by the plasma bombardment doping layer, but also improving the passivation effect and increasing the optical efficiency. The benefits of absorption can also enable solar cells having the above structure to produce high conversion efficiency.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
100‧‧‧太陽能電池100‧‧‧ solar cells
102‧‧‧光電轉換層102‧‧‧ photoelectric conversion layer
104‧‧‧摻雜層104‧‧‧Doped layer
106‧‧‧第一鈍化層106‧‧‧First passivation layer
106a‧‧‧開孔106a‧‧‧Opening
108‧‧‧第一透明導電層108‧‧‧First transparent conductive layer
110‧‧‧正面電極110‧‧‧Front electrode
112‧‧‧背面電極112‧‧‧Back electrode
114‧‧‧第一穿隧層114‧‧‧First tunneling layer
116‧‧‧本質非晶矽層116‧‧‧ Essential amorphous layer
118‧‧‧第二透明導電層118‧‧‧Second transparent conductive layer
120‧‧‧金屬電極120‧‧‧Metal electrode
122‧‧‧第二穿隧層122‧‧‧Second tunneling layer
124‧‧‧第二鈍化層124‧‧‧Second passivation layer
T‧‧‧厚度T‧‧‧ thickness
圖1A是依照本發明的一實施例的一種太陽能電池的示意圖。 圖1B是所述實施例的太陽能電池的另一種變形例的示意圖。 圖2是模擬實驗一的太陽能電池中的開孔與第一透明導電層的面積比之光電轉換效率提升之曲線圖。1A is a schematic diagram of a solar cell in accordance with an embodiment of the present invention. Fig. 1B is a schematic view showing another modification of the solar cell of the embodiment. 2 is a graph showing an increase in photoelectric conversion efficiency of an area ratio of an opening to a first transparent conductive layer in a solar cell of Experiment 1.
Claims (14)
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