TW201933539A - Electrode embedded member - Google Patents
Electrode embedded member Download PDFInfo
- Publication number
- TW201933539A TW201933539A TW107138138A TW107138138A TW201933539A TW 201933539 A TW201933539 A TW 201933539A TW 107138138 A TW107138138 A TW 107138138A TW 107138138 A TW107138138 A TW 107138138A TW 201933539 A TW201933539 A TW 201933539A
- Authority
- TW
- Taiwan
- Prior art keywords
- connecting member
- predetermined structure
- electrode
- substrate
- base material
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000919 ceramic Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims description 43
- 230000000694 effects Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 238000010304 firing Methods 0.000 description 7
- 229910010293 ceramic material Inorganic materials 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000000704 physical effect Effects 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000003252 repetitive effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000003826 uniaxial pressing Methods 0.000 description 3
- 229910017398 Au—Ni Inorganic materials 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- KZEVSDGEBAJOTK-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[5-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CC=1OC(=NN=1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O KZEVSDGEBAJOTK-UHFFFAOYSA-N 0.000 description 1
- JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 1
- YJLUBHOZZTYQIP-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)NN=N2 YJLUBHOZZTYQIP-UHFFFAOYSA-N 0.000 description 1
- CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 1
- WTFUTSCZYYCBAY-SXBRIOAWSA-N 6-[(E)-C-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-N-hydroxycarbonimidoyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C/C(=N/O)/C1=CC2=C(NC(O2)=O)C=C1 WTFUTSCZYYCBAY-SXBRIOAWSA-N 0.000 description 1
- DFGKGUXTPFWHIX-UHFFFAOYSA-N 6-[2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]acetyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)C1=CC2=C(NC(O2)=O)C=C1 DFGKGUXTPFWHIX-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
本發明係關於在由陶瓷構成的板狀的基材中埋設有內部電極之電極埋設構件。 The present invention relates to an electrode embedding member in which an internal electrode is embedded in a plate-shaped base material made of ceramic.
以往,已知有在由陶瓷構成的板狀的基材中埋設有內部電極之電極埋設構件(例如,參照專利文獻1)。在電極埋設構件中,於基材穿設用以使端子連接於內部電極的插入孔時,係以不會損傷內部電極的方式在連接內部電極與端子的部位事先配置連接構件,藉由連接構件防止內部電極損傷。 In the past, an electrode embedding member in which an internal electrode is embedded in a plate-like base material made of ceramics has been known (for example, see Patent Document 1). In the electrode embedding member, when the substrate is inserted through the insertion hole for connecting the terminal to the internal electrode, the connection member is disposed in advance at a portion where the internal electrode and the terminal are connected so as not to damage the internal electrode. Prevent internal electrode damage.
[專利文獻1]日本特許第5591627號公報 [Patent Document 1] Japanese Patent No. 5591627
以往,在電極埋設構件中,若使用時的溫度變化反覆時,會有因基材與連接構件的熱膨脹率之不同而在基材出現裂縫(crack),因而無法擔保基材的絕緣性 能之虞。 Conventionally, in the electrode embedding member, when the temperature change during use is reversed, cracks occur in the substrate due to the difference in thermal expansion coefficient between the substrate and the connecting member, and thus the insulation of the substrate cannot be secured. Can be.
本發明係有鑑於以上的問題點,目的在提供一種可抑制基材的裂縫等不良情況之電極埋設構件。 The present invention has been made in view of the above problems, and an object thereof is to provide an electrode embedding member capable of suppressing defects such as cracks in a substrate.
〔1〕為了達成上述目的,本發明係一種電極埋設構件(例如,實施形態的電極埋設構件1。以下相同。),其具備:具有表面(例如,實施形態的表面2a。以下相同。)及背面(例如,實施形態的背面2b。以下相同。),且由陶瓷所構成的板狀的基材(例如,實施形態的基材2。以下相同。);與前述基材的表面平行地延伸且埋設於前述基材之內部電極(例如,實施形態的內部電極3。以下相同。);與前述基材的表面平行地延伸且與前述內部電極重疊而配置之連接構件(例如,實施形態的連接構件4。以下相同。);及與前述連接構件連接之端子(例如,實施形態的端子5。以下相同。),該電極埋設構件的特徵為,具有至少一個以下的(1)至(3)之任一者的既定構造:(1)在與前述基材的表面垂直之方向的前述連接構件的至少一部分的厚度為0.2mm以下之第1既定構造,(2)前述連接構件具有缺口部(例如,實施形態的狹縫8,缺孔9、10。以下相同。)之第2既定構造, (3)前述連接構件由篩網構造體所構成之第3既定構造。 [1] In order to achieve the above object, the present invention is an electrode embedding member (for example, the electrode embedding member 1 of the embodiment. The same applies hereinafter), and has a surface (for example, the surface 2a of the embodiment. The same applies hereinafter). a back surface (for example, the back surface 2b of the embodiment. The same applies hereinafter), and a plate-shaped base material made of ceramic (for example, the base material 2 of the embodiment. The same applies hereinafter); and extends in parallel with the surface of the base material. And an internal electrode embedded in the substrate (for example, the internal electrode 3 of the embodiment. The same applies hereinafter); a connecting member that extends in parallel with the surface of the substrate and overlaps the internal electrode (for example, the embodiment) The connecting member 4 is the same as the above.) and a terminal (for example, the terminal 5 of the embodiment. The same applies hereinafter) to the connecting member, and the electrode embedding member is characterized by having at least one of the following (1) to (3) (1) a first predetermined structure in which a thickness of at least a part of the connecting member in a direction perpendicular to a surface of the base material is 0.2 mm or less, and (2) the aforementioned connection Member having a notch portion (e.g., the embodiment of the slit 8, 9 and 10 lack apertures. Hereinafter the same) of a second predetermined configuration, (3) The third connecting structure in which the connecting member is composed of a mesh structure.
根據本發明,藉由連接構件具有第1至第3任一者的既定構造,可縮小連接構件的體積。因此,藉由連接構件與作為母材之陶瓷的物性的差所誘發的應力會受到抑制,可抑制設置於基材之絕緣層(基材中之內部電極至基材的表面的部分)的裂縫等不良情況。 According to the invention, the volume of the connecting member can be reduced by the predetermined structure of any of the first to third members of the connecting member. Therefore, the stress induced by the difference in physical properties between the connecting member and the ceramic material as the base material is suppressed, and cracks in the insulating layer (the portion of the internal electrode in the substrate to the surface of the substrate) of the substrate can be suppressed. And other bad conditions.
〔2〕又,本發明中,前述既定構造至少具備前述第1既定構造,前述第1既定構造係以與前述基材的表面垂直之方向的前述連接構件的全體厚度為0.2mm以下較佳。根據此構成,由於連接構件可整體地抑制內部應力的產生,故可進一步抑制裂縫等的不良情況。 [2] In the present invention, the predetermined structure includes at least the first predetermined structure, and the first predetermined structure is preferably 0.2 mm or less in total thickness of the connecting member in a direction perpendicular to a surface of the base material. According to this configuration, since the connection member can suppress the generation of internal stress as a whole, it is possible to further suppress the defects such as cracks.
〔3〕又,本發明中,前述既定構造至少具備前述第2既定構造,前述缺口部較佳為避開供前述連接構件的前述端子連接之中央區域(例如,實施形態的中央區域6。以下相同。),而從前述連接構件的中央區域側朝前述連接構件的外緣(例如,實施形態的外緣7。以下相同。)延伸成放射狀之狹縫(例如,實施形態的狹縫8。以下相同。)。根據此構成,由於連接構件容易因狹縫而變形,可抑制內部應力的發生,所以可抑制裂縫等的不良情況。 [3] In the present invention, the predetermined structure includes at least the second predetermined structure, and the notch portion preferably avoids a central region where the terminal of the connection member is connected (for example, the central region 6 of the embodiment. Similarly, the slit is extended from the central portion side of the connecting member toward the outer edge of the connecting member (for example, the outer edge 7 of the embodiment. The same applies hereinafter) to the radial slit (for example, the slit 8 of the embodiment) The same as the following.). According to this configuration, since the connecting member is easily deformed by the slit, the occurrence of internal stress can be suppressed, so that problems such as cracks can be suppressed.
〔4〕又,本發明中,前述既定構造至少具備前述第2既定構造,前述缺口部較佳為避開供前述連接構件的前述端子連接之中央區域而貫通前述連接構件之缺孔(例如,實施形態的缺孔9、10。以下相同。)。根據 此構成,由於連接構件容易因缺孔而變形,可抑制內部應力的發生,所以可抑制裂縫等的不良情況。 [4] In the present invention, the predetermined structure includes at least the second predetermined structure, and the notch portion preferably has a hole that penetrates the connection member from a central region where the terminal of the connection member is connected (for example, The missing holes 9 and 10 of the embodiment are the same as the following.). according to According to this configuration, since the connecting member is easily deformed by the lack of holes, the occurrence of internal stress can be suppressed, so that problems such as cracks can be suppressed.
〔5〕又,本發明中,前述既定構造至少具備前述第2既定構造,前述缺口部較佳為避開供前述連接構件的前述端子連接之中央區域,並且從前述中央區域側到達前述連接構件的外緣。根據此構成,由於連接構件容易因缺孔而變形,可抑制內部應力的發生,所以可抑制裂縫等的不良情況。 [5] In the present invention, the predetermined structure includes at least the second predetermined structure, and the notch portion preferably avoids a central region in which the terminal of the connection member is connected, and reaches the connection member from the central portion side. The outer edge. According to this configuration, since the connecting member is easily deformed by the lack of holes, the occurrence of internal stress can be suppressed, so that problems such as cracks can be suppressed.
〔6〕又,本發明中,前述既定構造至少具備前述第3既定構造,前述連接構件較佳為重疊複數片篩網構造體而構成。根據此構成,由於屬於篩網構造體的連接構件容易變形,可抑制內部應力的產生,所以可進一步抑制裂縫等的不良情況。又,藉由重疊複數片,即便為篩網構造體,也可使連接構件具有適當的強度。 [6] In the present invention, the predetermined structure includes at least the third predetermined structure, and the connecting member is preferably configured by stacking a plurality of mesh structures. According to this configuration, since the connecting member belonging to the mesh structure is easily deformed, the occurrence of internal stress can be suppressed, so that problems such as cracks can be further suppressed. Further, by stacking a plurality of sheets, even if it is a screen structure, the connecting member can have an appropriate strength.
〔7〕又,本發明中,前述既定構造係以從垂直於前述基材的表面的方向觀看時具備旋轉對稱性較佳。根據此構成,由於連接構件具備有旋轉對稱性,故與不具備旋轉對稱性者相比較,可抑制連接構件變形而使內部應力釋放時被釋放的內部應力彼此重複,可使連接構件的內部應力適當地分散,以抑制裂縫產生於基材表面側的絕緣層。 [7] Further, in the present invention, the predetermined structure is preferably provided with rotational symmetry when viewed from a direction perpendicular to a surface of the substrate. According to this configuration, since the connecting member is provided with rotational symmetry, the internal stress released when the internal stress is released can be suppressed and the internal stress of the connecting member can be suppressed as compared with the case where the rotational symmetry is not provided. Disperse appropriately to suppress the occurrence of cracks in the insulating layer on the surface side of the substrate.
1‧‧‧電極埋設構件 1‧‧‧electrode embedded components
2‧‧‧基材 2‧‧‧Substrate
2a‧‧‧表面 2a‧‧‧ surface
2b‧‧‧背面 2b‧‧‧back
3‧‧‧內部電極 3‧‧‧Internal electrodes
4‧‧‧連接構件 4‧‧‧Connecting components
5‧‧‧端子 5‧‧‧terminal
5a‧‧‧緩衝構件 5a‧‧‧ cushioning members
6‧‧‧中央區域 6‧‧‧Central Area
7‧‧‧外緣 7‧‧‧ outer edge
8‧‧‧狹縫(缺口部) 8‧‧‧Slit (notch)
9‧‧‧缺孔(第3實施形態) 9‧‧‧No holes (3rd embodiment)
10‧‧‧缺孔(第4實施形態) 10‧‧‧No holes (4th embodiment)
11‧‧‧突部 11‧‧‧ protrusion
圖1係示意地表示第1實施形態的電極埋設構件之說明圖。 Fig. 1 is an explanatory view schematically showing an electrode embedding member according to the first embodiment.
圖2係表示第1實施形態的連接構件之說明圖。 Fig. 2 is an explanatory view showing a connecting member of the first embodiment.
圖3係表示第2實施形態的連接構件之說明圖。 Fig. 3 is an explanatory view showing a connecting member of a second embodiment.
圖4係表示第3實施形態的連接構件之說明圖。 Fig. 4 is an explanatory view showing a connecting member of a third embodiment.
圖5係表示第4實施形態的連接構件之說明圖。 Fig. 5 is an explanatory view showing a connecting member of a fourth embodiment.
圖6係示意地表示第5實施形態的連接構件之說明圖。 Fig. 6 is an explanatory view schematically showing a connecting member of a fifth embodiment.
如圖1示意地表示,第1實施形態的電極埋設構件1具備:圓板狀的基材2,具有表面2a及背面2b,且由氧化鋁(Al2O3)、氮化鋁(AlN)、碳化氮(SiC)、氮化矽(Si3N4)、氧化鋯(ZrO2)、鈦酸鋇(BaTiO3)等的陶瓷所構成;內部電極3,與基材2的表面2a平行地延伸成帶狀,且埋設於基材2;以及連接構件4,與基材2的表面2a平行地延伸成圓盤狀,且與內部電極3重疊而配置。在連接構件4藉由硬焊焊接等接合有棒狀端子5。 As shown in Fig. 1, the electrode embedding member 1 of the first embodiment includes a disk-shaped base material 2 having a surface 2a and a back surface 2b and made of alumina (Al 2 O 3 ) or aluminum nitride (AlN). And a ceramic such as carbon nitride (SiC), tantalum nitride (Si 3 N 4 ), zirconium oxide (ZrO 2 ), or barium titanate (BaTiO 3 ); the internal electrode 3 is parallel to the surface 2a of the substrate 2 The base material 2 is embedded in a strip shape and embedded in the base material 2; and the connecting member 4 is formed in a disk shape in parallel with the surface 2a of the base material 2, and is disposed to overlap the internal electrode 3. The rod-shaped terminal 5 is joined to the connecting member 4 by brazing or the like.
內部電極3及連接構件4係由鎢、鉬或以此等為主成分的合金構成。端子5係由鎳、鈦、銅或以此等為主成分的合金構成。 The internal electrode 3 and the connecting member 4 are made of tungsten, molybdenum or an alloy containing the main component thereof. The terminal 5 is made of nickel, titanium, copper or an alloy containing the main component thereof.
如圖2所示,連接構件4為圓盤狀,與基材2的表面垂直之方向的全體厚度係設定為0.2mm以下。第1實施形態中,與連接構件4的基材2表面垂直的方向之全體厚度設定為0.2mm以下的構造係相當於本發明 的第1既定構造。此外,連接構件4只要可藉由變形來某程度地化解熱膨脹的影響即可,若可變形來吸收熱膨脹,亦可為僅連接構件4的一部分設定成在與基材2表面垂直的方向之厚度0.2mm以下。 As shown in FIG. 2, the connection member 4 has a disk shape, and the total thickness in the direction perpendicular to the surface of the base material 2 is set to 0.2 mm or less. In the first embodiment, the entire thickness in the direction perpendicular to the surface of the base material 2 of the connecting member 4 is set to 0.2 mm or less, which corresponds to the present invention. The first established structure. Further, the connecting member 4 may be such that the influence of thermal expansion can be resolved to some extent by deformation, and if it is deformable to absorb thermal expansion, only a part of the connecting member 4 may be set to a thickness in a direction perpendicular to the surface of the substrate 2. 0.2mm or less.
根據第1實施形態的電極埋設構件1,由於相較於與基材2表面垂直的方向之厚度超過0.2mm的構成,可使連接構件4的體積變小,所以即便在電極埋設構件1形成得較薄的情況下,由金屬製連接構件4與屬於母材之陶瓷之物性的差所誘發的應力也可受到抑制,能夠抑制絕緣層(從基材2的內部電極3至基材2的表面2a之部分)的裂縫等不良情況。 According to the electrode-embedded member 1 of the first embodiment, since the thickness of the electrode-embedded member 1 is larger than 0.2 mm in the direction perpendicular to the surface of the substrate 2, the volume of the connecting member 4 can be reduced. In the case of a thinner case, the stress induced by the difference in physical properties between the metal connecting member 4 and the ceramic material belonging to the base material can be suppressed, and the insulating layer can be suppressed (from the internal electrode 3 of the substrate 2 to the surface of the substrate 2) A defect such as a crack in part 2a).
其次,作為第1實施形態的實施例,對實施例1-1至實施例1-6(以下,稱為實施例1。)與比較例1-1至比較例1-3進行比較。在實施例1中,由基材製造了屬於晶圓保持裝置的電極埋設構件1,該基材係埋設有由金屬構成的內部電極3且由添加有氧化釔的氮化鋁構成。 Next, as an example of the first embodiment, Examples 1-1 to 1-6 (hereinafter referred to as Example 1) were compared with Comparative Example 1-1 to Comparative Example 1-3. In the first embodiment, an electrode embedding member 1 belonging to a wafer holding device in which an internal electrode 3 made of a metal is embedded and made of aluminum nitride to which cerium oxide is added is manufactured from a substrate.
接著,說明關於實施例1之電極埋設構件1的製造方法。首先,形成絕緣層。得到由氮化鋁粉末97質量%、氧化釔粉末3質量%所構成的粉末混合物,將其填充於模具以實施單軸加壓(uniaxial pressing)處理。藉此,形成直徑340mm、厚度5mm的第一層。 Next, a method of manufacturing the electrode embedding member 1 of the first embodiment will be described. First, an insulating layer is formed. A powder mixture composed of 97% by mass of aluminum nitride powder and 3% by mass of cerium oxide powder was obtained, which was filled in a mold to perform uniaxial pressing treatment. Thereby, a first layer having a diameter of 340 mm and a thickness of 5 mm was formed.
接著,設置內部電極3。在第一層上,載置作為內部電極3之直徑290mm的鉬製箔(厚度0.1mm)。在內部電極3上,載置鎢製且直徑6mm的圓盤狀連接構件4。連接構件4係在一個基材2上設置有20處。將連接構件4連接於內部電極3時,係在供連接構件4重疊之內部電極3的部分,塗布鎢糊料等導電性構件。 Next, the internal electrode 3 is provided. On the first layer, a molybdenum foil (thickness: 0.1 mm) having a diameter of 290 mm as the internal electrode 3 was placed. On the internal electrode 3, a disk-shaped connecting member 4 made of tungsten and having a diameter of 6 mm was placed. The connecting member 4 is provided at 20 places on one substrate 2. When the connection member 4 is connected to the internal electrode 3, a conductive member such as a tungsten paste is applied to a portion of the internal electrode 3 to which the connection member 4 is superposed.
然後,成形第二層。以在第一層上遮住內部電極3及連接構件4的方式填充陶瓷粉末以進行單軸加壓處理而作成第二層成形體。 Then, the second layer is formed. The ceramic powder is filled in such a manner as to cover the internal electrode 3 and the connecting member 4 on the first layer to perform uniaxial pressing treatment to form a second layer molded body.
接著,設置加熱器電極。為了加熱作為晶圓保持裝置的電極埋設構件1本身,配置由形成既定圖案的鉬篩網(mesh)(線徑0.1mm,網孔50目)所構成的發熱電阻體,在連接既定的加熱器用端子的位置載置加熱器端子用連接構件(鎢粒、直徑10mm、厚度0.5mm)。 Next, the heater electrode is set. In order to heat the electrode embedding member 1 itself as a wafer holding device, a heating resistor composed of a molybdenum mesh (wire diameter: 0.1 mm, mesh: 50 mesh) forming a predetermined pattern is disposed, and is connected to a predetermined heater. A connection member for the heater terminal (tungsten grain, diameter 10 mm, thickness 0.5 mm) was placed at the position of the terminal.
其後,形成燒成前的成形體。在加熱器電極上填充陶瓷粉末並進行單軸加壓處理而形成第三層。 Thereafter, a molded body before firing is formed. The ceramic electrode is filled with a ceramic powder and subjected to uniaxial pressing treatment to form a third layer.
接著,實施燒成步驟。燒成步驟係以10MPa的壓力將積層達第三層的積層體,於燒成溫度1800℃、燒成時間2小時下,進行熱壓燒成,而得到直徑340mm、厚度20mm的陶瓷燒結體。 Next, a baking step is performed. In the firing step, the layered body having the third layer was laminated at a pressure of 10 MPa, and calcined at a firing temperature of 1800 ° C for 2 hours, thereby obtaining a ceramic sintered body having a diameter of 340 mm and a thickness of 20 mm.
接著,實施燒成後的加工步驟。在燒成後的加工步驟中,將陶瓷燒結體的外面進行研削、研磨加工,而形成有絕緣層的厚度0.3mm、表面粗度Ra0.4μm的晶圓載置面(表面2a)。 Next, the processing steps after baking are performed. In the processing step after the firing, the outer surface of the ceramic sintered body was ground and polished to form a wafer mounting surface (surface 2a) having a thickness of 0.3 mm and a surface roughness Ra of 0.4 μm.
接著,連接端子5。以從燒成後的陶瓷基體 的背面2b在各連接構件4的位置到達連接構件4之方式進行穿孔加工(直徑5.2mm),形成從背面2b到達連接構件4的圓柱狀插入孔2c。在劃定插入孔2c的連接構件4上,透過在Au-Ni添加有作為活性金屬的Ti之硬焊材,配置直徑5mm、厚度2mm的柯華合金(Kovar alloy)製緩衝構件5a。然後,在緩衝構件5a上透過在Au-Ni添加有作為活性金屬的Ti之硬焊材,配置直徑5mm、長度200mm的圓柱狀鎳製供電用端子5。然後,利用真空爐,藉由以1050℃加熱來進行硬焊焊接,而完成電極埋設構件1。 Next, the terminal 5 is connected. From the ceramic matrix after firing The back surface 2b is pierced (diameter: 5.2 mm) so that the position of each connection member 4 reaches the connection member 4, and the cylindrical insertion hole 2c which reaches the connection member 4 from the back surface 2b is formed. On the connecting member 4 defining the insertion hole 2c, a buffer member 5a made of Kovar alloy having a diameter of 5 mm and a thickness of 2 mm was placed through a hard solder material to which Ti as an active metal was added to Au-Ni. Then, a cylindrical nickel power supply terminal 5 having a diameter of 5 mm and a length of 200 mm was placed on the buffer member 5a by a hard solder material in which Ti as an active metal was added to Au-Ni. Then, the electrode embedding member 1 was completed by brazing at 1050 ° C using a vacuum furnace.
連接構件4的厚度,在實施例1-1中為0.08mm,在實施例1-2中為0.10mm,在實施例1-3中為0.13mm,在實施例1-4中為0.15mm,在實施例1-5中為0.18mm,在實施例1-6中為0.20mm。 The thickness of the connecting member 4 is 0.08 mm in the embodiment 1-1, 0.10 mm in the embodiment 1-2, 0.13 mm in the embodiment 1-3, and 0.15 mm in the embodiment 1-4. It was 0.18 mm in Examples 1-5 and 0.20 mm in Examples 1-6.
作為評價方法,將所製得的電極埋設構件1重複進行30次加熱到700℃後再冷卻到100℃的熱循環。計算在端子5正上方之基材2的表面2a側發生裂縫的部位數,將連接構件4之20個中的0個評價為適當,將出現1個以上的裂縫者評價為不適當。 As an evaluation method, the electrode-embedded member 1 thus obtained was repeatedly subjected to a heat cycle of heating to 700 ° C for 30 times and then cooling to 100 ° C. The number of cracks on the surface 2a side of the base material 2 directly above the terminal 5 was calculated, and one of the 20 members of the connecting member 4 was evaluated as appropriate, and one or more cracks were evaluated as inappropriate.
由此結果得知,至實施例1-1~6為止,產生部位數為0個,可靠性高。 As a result, it was found that the number of generated portions was zero until Examples 1-1 to 6 and the reliability was high.
比較例1-1、比較例1-2,除了將連接構件設為圓盤形狀,全體的厚度設為0.3mm、0.5mm外,係以與實施 例1相同條件來製作。 In Comparative Example 1-1 and Comparative Example 1-2, the thickness of the entire connecting member was set to a disk shape, and the thickness was 0.3 mm or 0.5 mm. Example 1 was made under the same conditions.
其結果為,在比較例1-1及比較例1-2中,裂縫發生1個、4個,厚度為0.3mm以上可靠性低,並不適當。 As a result, in Comparative Example 1-1 and Comparative Example 1-2, one or four cracks occurred, and the thickness was 0.3 mm or more, and the reliability was low, which was not appropriate.
未使用連接構件的比較例1-3,由於沒有連接構件,故穿設端子用孔時容易刺破內部電極,係為此次評價前的問題,良率降低。 In Comparative Example 1-3 in which the connecting member was not used, since there was no connecting member, it was easy to pierce the internal electrode when the terminal hole was pierced, which was a problem before the evaluation, and the yield was lowered.
此外,第1實施形態的直徑等數值為例示,並不限定於此,即便設定其他數值,也可獲得本發明的作用效果。 In addition, the numerical values such as the diameter of the first embodiment are exemplified, and the present invention is not limited thereto, and the effects of the present invention can be obtained even if other numerical values are set.
第2實施形態的電極埋設構件1除了連接構件4不同外,全部係構成為與第1實施形態者相同。如圖3所示,在第2實施形態的連接構件4,避開供連接端子5的中央區域6,從中央區域6側朝向連接構件4的外緣7延伸成放射狀的八個狹縫8(缺口部)係在圓周方向等間隔地設置。狹縫8到達外緣7。連接構件4係在圓周方向等間隔地設有八個狹縫8,從垂直於基材2表面的方向觀看時具備有旋轉對稱性。 The electrode embedding member 1 of the second embodiment is configured in the same manner as the first embodiment except for the connection member 4. As shown in Fig. 3, in the connecting member 4 of the second embodiment, the central portion 6 of the connection terminal 5 is avoided, and eight slits 8 extending radially from the central portion 6 side toward the outer edge 7 of the connecting member 4 are formed. (notch portions) are provided at equal intervals in the circumferential direction. The slit 8 reaches the outer edge 7. The connecting member 4 is provided with eight slits 8 at equal intervals in the circumferential direction, and has rotational symmetry when viewed from a direction perpendicular to the surface of the substrate 2.
根據第2實施形態的電極埋設構件1,由於相較於未設有狹縫8的構成,可使連接構件4的體積變小,所以由金屬製連接構件4與屬於母材的陶瓷之物性的差所誘發的應力可受到抑制,能夠抑制絕緣層(從基材2中的內部電極3至基材2的表面2a之部分)的裂縫等不 良情況。 According to the electrode embedding member 1 of the second embodiment, since the volume of the connecting member 4 can be reduced as compared with the configuration in which the slit 8 is not provided, the metal connecting member 4 and the ceramic material belonging to the base material have physical properties. The stress induced by the difference can be suppressed, and cracks of the insulating layer (from the internal electrode 3 in the substrate 2 to the portion of the surface 2a of the substrate 2) can be suppressed. Good situation.
又,由於基材2燒成時連接構件4容易變形,故可緩和連接構件4的內部應力。再者,由於基材2的陶瓷會進入連接構件4的狹縫8,故連接構件4與基材2的密接力得以提升,連接構件4附近的強度可靠性得以提升。在第2實施形態中,狹縫8相當於本發明的第2既定構造。 Moreover, since the connecting member 4 is easily deformed when the base material 2 is fired, the internal stress of the connecting member 4 can be alleviated. Further, since the ceramic of the substrate 2 enters the slit 8 of the connecting member 4, the adhesion between the connecting member 4 and the substrate 2 is improved, and the strength reliability in the vicinity of the connecting member 4 is improved. In the second embodiment, the slit 8 corresponds to the second predetermined structure of the present invention.
又,由於連接構件4具備有旋轉對稱性,所以相較於例如狹縫8未等間隔地設置且未具備旋轉對稱性的情況,會抑制在內部應力的釋放方產生重複部分,可使內部應力適當地分散以抑制裂縫發生在基材表面側的絕緣層。 Further, since the connecting member 4 is provided with rotational symmetry, it is provided that, for example, the slit 8 is not equally spaced and does not have rotational symmetry, it is possible to suppress occurrence of a repetitive portion in the release of internal stress, and internal stress can be obtained. The insulating layer is appropriately dispersed to suppress the occurrence of cracks on the surface side of the substrate.
此外,第2實施形態中,係就狹縫8到達連接構件4的外緣7者進行了說明,惟本發明的狹縫不限定於此,例如,狹縫亦可未到達連接構件4的外緣,而切入自與外緣隔著間隔的位置而形成。 Further, in the second embodiment, the slit 8 has been described as reaching the outer edge 7 of the connecting member 4. However, the slit of the present invention is not limited thereto, and for example, the slit may not reach the outside of the connecting member 4. The edge is formed by being spaced from the outer edge.
又,亦可將與基材2的表面垂直之方向的第2實施形態的連接構件4的至少一部分的厚度設為0.2mm以下,以具備第1既定構造和第2既定構造的任一者之方式構成連接構件。 In addition, the thickness of at least a part of the connection member 4 of the second embodiment in the direction perpendicular to the surface of the base material 2 may be 0.2 mm or less, and may include any of the first predetermined structure and the second predetermined structure. The method constitutes a connecting member.
又,雖然內部應力的抑制力有降低之虞,但是即便狹縫8的配置設置成不具備從垂直於基材2表面的方向觀看時的旋轉對稱性,也可比習知構成更能抑制內部應力,可發揮抑制裂縫等不良情況之本發明的作用效果。 Further, although the suppression force of the internal stress is lowered, even if the slit 8 is disposed so as not to have rotational symmetry when viewed from a direction perpendicular to the surface of the substrate 2, the internal stress can be suppressed more than the conventional structure. It is possible to exert the effects of the present invention in suppressing defects such as cracks.
第2實施形態的實施例2係在連接構件4藉由雷射加工將狹縫8以長度2mm、寬度0.1mm設成放射狀,其他部分則與實施例1相同。根據實施例2,也進行了與實施例1同樣的評價,而確認到未發生裂縫,可靠性高。 In the second embodiment of the second embodiment, the slit 8 is radially formed by the laser beam processing in the connecting member 4 by a length of 2 mm and a width of 0.1 mm, and the other portions are the same as those in the first embodiment. According to the second embodiment, the same evaluation as in the first embodiment was carried out, and it was confirmed that cracks did not occur, and the reliability was high.
又,認為陶瓷母材的一部分進入狹縫8,陶瓷製基材2與連接構件4間的密接性變高,連接構件4附近的強度可靠性得以提升。 Further, it is considered that a part of the ceramic base material enters the slit 8, and the adhesion between the ceramic base material 2 and the connecting member 4 is increased, and the strength reliability in the vicinity of the connecting member 4 is improved.
此外,第2實施形態之狹縫8的長度等數值係為例示,本發明並不限定於此,即便設定其他的數值,也可獲得本發明的作用效果。 In addition, the numerical values of the length of the slit 8 of the second embodiment are exemplified, and the present invention is not limited thereto, and the effects of the present invention can be obtained even if other numerical values are set.
第3實施形態的電極埋設構件1除了連接構件4不同外,其餘全部係構成與第1實施形態者相同。如圖4所示,在第3實施形態的連接構件4,避開供連接端子5的中央區域6而貫通連接構件4的扇狀六個缺孔9係彼此在圓周方向隔著等間隔設置。扇狀缺孔9係從連接構件4的外緣7隔著間隔穿設。連接構件4係藉由在圓周方向等間隔地設置有六個缺孔9,在從垂直於基材2表面的方向觀看時具備有旋轉對稱性。 The electrode embedding member 1 of the third embodiment has the same configuration as that of the first embodiment except for the connection member 4. As shown in FIG. 4, in the connection member 4 of the third embodiment, the fan-shaped six cutout holes 9 penetrating the connection member 4 from the central region 6 of the connection terminal 5 are provided at equal intervals in the circumferential direction. The fan-shaped cutout holes 9 are bored from the outer edge 7 of the connecting member 4 with a space therebetween. The connecting member 4 is provided with six louvers 9 at equal intervals in the circumferential direction, and has rotational symmetry when viewed from a direction perpendicular to the surface of the substrate 2.
根據第3實施形態的電極埋設構件1,由於與未設有缺孔9者相比較,可將連接構件4的體積縮小,故由金屬製連接構件4與屬於母材之陶瓷的物性之差所 誘發的應力會受到抑制,可抑制絕緣層(從基材2的內部電極3至基材2的表面2a之部分)的裂縫等不良情況。 According to the electrode embedding member 1 of the third embodiment, since the volume of the connecting member 4 can be reduced as compared with the case where the missing hole 9 is not provided, the difference between the physical properties of the metal connecting member 4 and the ceramic material belonging to the base material can be obtained. The induced stress is suppressed, and problems such as cracks in the insulating layer (from the internal electrode 3 of the substrate 2 to the portion of the surface 2a of the substrate 2) can be suppressed.
又,由於基材2燒成時連接構件4易變形,故可緩和連接構件4的內部應力。再者,由於基材2的陶瓷進入連接構件4的缺孔9,故連接構件4與基材2的密接力得以提升,連接構件4附近的強度可靠性得以提升。在第3實施形態中,缺孔9相當於本發明的第2既定構造。 Moreover, since the connecting member 4 is easily deformed when the base material 2 is fired, the internal stress of the connecting member 4 can be alleviated. Further, since the ceramic of the substrate 2 enters the hole 9 of the connecting member 4, the adhesion between the connecting member 4 and the substrate 2 is improved, and the strength reliability in the vicinity of the connecting member 4 is improved. In the third embodiment, the missing hole 9 corresponds to the second predetermined structure of the present invention.
又,由於連接構件4具備旋轉對稱性,所以與例如缺孔9未在圓周方向上等間隔地設置,或者缺孔9之每一者的大小或形狀不同等不具備從與基材2的表面垂直的方向觀看時的旋轉對稱性之情況相比較之下,可抑制在連接構件4之內部應力的釋放方產生重複部分,而可適當地抑制內部應力。 Further, since the connecting member 4 has rotational symmetry, for example, the missing holes 9 are not provided at equal intervals in the circumferential direction, or the size or shape of each of the missing holes 9 is different, and the surface of the substrate 2 is not provided. In comparison with the case of the rotational symmetry in the vertical direction, it is possible to suppress the occurrence of a repetitive portion in the release of the internal stress of the connecting member 4, and the internal stress can be appropriately suppressed.
此外,第3實施形態中,雖就將缺孔9設成扇狀,且形成有六個的構成進行說明,但是本發明的缺孔9並不限定於此,只要貫通連接構件即可,例如亦可為扇以外的形狀,例如圓形、多角形狀。又,缺孔的數量不限於六個,也可為一個,也可為複數個例如2~5個、7個以上之複數個。 In addition, in the third embodiment, the configuration in which the cutout hole 9 is formed in a fan shape and six are formed will be described. However, the cutout hole 9 of the present invention is not limited thereto, and may be, for example, a through-connection member. It may also be a shape other than a fan, such as a circular shape or a polygonal shape. Further, the number of the missing holes is not limited to six, and may be one, or may be plural, for example, 2 to 5 or 7 or more.
又,雖然內部應力的抑制力有降低之虞,但是缺孔9即便設成連接構件4不具有旋轉對稱性,也可比習知構成更能抑制內部應力,可發揮抑制裂縫等不良情況之本發明的作用效果。 In addition, even if the connection member 4 does not have rotational symmetry, the hole-free hole 9 can suppress the internal stress more than the conventional structure, and can exhibit the problem of suppressing cracks and the like. The effect of the effect.
第3實施形態的實施例3係在連接構件4藉由雷射加工形成有缺孔9(扇形形狀之徑向內側之邊的直徑(內徑)1mm,扇形形狀之徑向外側之邊的直徑(外徑)2.4mm,缺孔9彼此之圓周方向間的間隔0.4mm)。根據實施例3,也進行了與實施例1同樣的評價,而確認到未發生裂縫、可靠性高。 In the third embodiment of the third embodiment, the connection member 4 is formed with the hole 9 by laser processing (the diameter (inner diameter) of the side of the radially inner side of the sector shape is 1 mm, and the diameter of the side of the radial outer side of the sector shape. (outer diameter) 2.4 mm, the gap between the notch holes 9 in the circumferential direction is 0.4 mm). According to the third embodiment, the same evaluation as in the first embodiment was carried out, and it was confirmed that cracks did not occur and the reliability was high.
又,認為陶瓷母材進入缺孔9,陶瓷製基材2與連接構件4之間的密接性變高,連接構件4附近的強度可靠性得以提升。 Further, it is considered that the ceramic base material enters the defective hole 9, and the adhesion between the ceramic base material 2 and the connecting member 4 is increased, and the strength reliability in the vicinity of the connecting member 4 is improved.
由於陶瓷燒成時連接構件4易變形,故認為藉由緩和連接構件4的內部應力,也可使電極埋設構件1之連接構件4附近的強度可靠性提升。 Since the connecting member 4 is easily deformed when the ceramic is fired, it is considered that the strength reliability in the vicinity of the connecting member 4 of the electrode-embedded member 1 can be improved by alleviating the internal stress of the connecting member 4.
此外,第3實施形態中之直徑等的數值係為例示,本發明並不限定於此,即便設定其他的數值,也可獲得本發明的作用效果。 In addition, the numerical values of the diameter and the like in the third embodiment are exemplified, and the present invention is not limited thereto, and the effects of the present invention can be obtained even if other numerical values are set.
第4實施形態的電極埋設構件1除了連接構件4不同外,其餘全部係構成與第1實施形態者相同。如圖5所示,在第4實施形態的連接構件4,避開供連接端子5的中央區域6而貫通連接構件4之三角形狀的八個缺孔10係彼此在圓周方向隔著間隔設置。缺孔10係到達連接構件4的外緣7。 The electrode embedding member 1 of the fourth embodiment has the same configuration as that of the first embodiment except for the connection member 4. As shown in Fig. 5, in the connecting member 4 of the fourth embodiment, eight triangular cutouts 10 that penetrate the connecting member 4 from the central region 6 of the connecting terminal 5 are provided at intervals in the circumferential direction. The missing hole 10 reaches the outer edge 7 of the connecting member 4.
根據第4實施形態的電極埋設構件1,由於 與未設有缺孔10者相比較,可將連接構件4的體積縮小,故由金屬製連接構件4和屬於母材之陶瓷的物性之差所誘發的應力會受到抑制,可抑制設置於基材2之絕緣層(從基材2中的內部電極3至基材2的表面2a為止之部分)的裂縫等不良情況。 According to the electrode embedding member 1 of the fourth embodiment, The volume of the connecting member 4 can be reduced as compared with the case where the hole 10 is not provided. Therefore, the stress induced by the difference in physical properties between the metal connecting member 4 and the ceramic material belonging to the base material can be suppressed, and the setting can be suppressed. A problem such as cracks in the insulating layer of the material 2 (the portion from the internal electrode 3 in the substrate 2 to the surface 2a of the substrate 2).
又,由於基材2燒成時,按設有缺孔10的程度,連接構件4容易變形,所以可緩和連接構件4的內部應力。再者,基材2的陶瓷會進入連接構件4的缺孔10。此外,由於缺孔10到達連接構件4的外緣7,故連接構件4之實質外緣的長度變長。因此,連接構件4與基材2的密接力會提升,連接構件4附近的強度可靠性會提升。第4實施形態中,缺孔10相當於本發明的第2既定構造。 Further, when the base material 2 is fired, the connecting member 4 is easily deformed to the extent that the hole 10 is provided, so that the internal stress of the connecting member 4 can be alleviated. Furthermore, the ceramic of the substrate 2 enters the notch 10 of the connecting member 4. Further, since the missing hole 10 reaches the outer edge 7 of the connecting member 4, the length of the substantial outer edge of the connecting member 4 becomes long. Therefore, the adhesion between the connecting member 4 and the substrate 2 is increased, and the strength reliability in the vicinity of the connecting member 4 is improved. In the fourth embodiment, the missing hole 10 corresponds to the second predetermined structure of the present invention.
由於連接構件4具備旋轉對稱性,所以與例如缺孔10未在圓周方向等間隔的設置,或者缺孔10之每一者的大小或形狀不同等不具備旋轉對稱性的情況相比較之下,可抑制在連接構件4之內部應力的排逸釋放方產生重複部分,而可適當地分散內部應力以抑制裂縫朝基材表面側的絕緣層發生。 Since the connecting member 4 has rotational symmetry, for example, in comparison with the case where the missing holes 10 are not equally spaced in the circumferential direction, or the size or shape of each of the missing holes 10 does not have rotational symmetry, It is possible to suppress the occurrence of a repetitive portion in the discharge release of the internal stress of the connecting member 4, and the internal stress can be appropriately dispersed to suppress the occurrence of the crack toward the insulating layer on the surface side of the substrate.
此外,雖然內部應力的抑制力有降低之虞,但是缺孔10即便設成連接構件4不具有旋轉對稱性,也可比習知構成更能抑制內部應力,可發揮抑制裂縫等不良情況之本發明的作用效果。 In addition, even if the connection member 4 does not have rotational symmetry, the hole 10 can suppress the internal stress more than the conventional structure, and can exhibit the problem of suppressing cracks and the like. The effect of the effect.
第4實施形態的實施例4,係在連接構件4藉由雷射加工而在圓周方向以45°的間隔設有八個缺孔10。形成於缺孔10的圓周方向之間的突部11,係以前端的角度成為90°的方式,且從連接構件4的中心至突部11的前端為止的距離成為4mm(即,連接構件4的直徑為8mm)之方式進行設定。 In the fourth embodiment of the fourth embodiment, eight connection holes 10 are provided in the connecting member 4 at a distance of 45° in the circumferential direction by laser processing. The projection 11 formed between the circumferential directions of the cutout holes 10 has a front end angle of 90°, and the distance from the center of the connecting member 4 to the front end of the projection 11 is 4 mm (that is, the connection member 4 is Set by the method of diameter 8mm).
此外,第4實施形態的角度等數值係為例示,本發明並不限定於此,即便設定其他的數值,也可獲得本發明的作用效果。 Further, the numerical values such as the angles of the fourth embodiment are exemplified, and the present invention is not limited thereto, and the effects of the present invention can be obtained even if other numerical values are set.
第5實施形態的電極埋設構件1除了連接構件4不同外,其餘全部係構成與第1實施形態者相同。如圖6示意地顯示,第5實施形態的連接構件4,係藉由將金屬線或金屬纖維等編成網眼狀等而構成的一片篩網構造體,或重疊有複數片篩網構造體的積層體所構成。 The electrode embedding member 1 of the fifth embodiment is the same as that of the first embodiment except for the connection member 4. As shown in Fig. 6, the connecting member 4 of the fifth embodiment is a single mesh structure formed by meshing a metal wire or a metal fiber or the like, or a plurality of mesh structures are stacked. It consists of a laminate.
根據第5實施形態的電極埋設構件1,與連接構件4為非篩網構造體者相比較之下,可縮小連接構件4的體積,故因金屬製連接構件4與作為母材的陶瓷之物性差所誘發的應力受到抑制,可抑制設置於基材2之絕緣層(從基材2的內部電極3至基材2的表面2a的部分)的裂縫等不良情況。 According to the electrode embedding member 1 of the fifth embodiment, the volume of the connecting member 4 can be reduced as compared with the case where the connecting member 4 is a non-screen structure, and therefore the metal connecting member 4 and the ceramic material as the base material are used. The stress induced by the difference is suppressed, and problems such as cracks in the insulating layer (the portion from the internal electrode 3 of the substrate 2 to the surface 2a of the substrate 2) of the substrate 2 can be suppressed.
又,由於基材2燒成時屬於篩網構造體的連接構件4容易變形,故可緩和連接構件4的內部應力。再者,由於基材2的陶瓷會進入連接構件4的篩網構造 體的間隙,故連接構件4與基材2的密接力得以提升,端子5附近的強度可靠性得以提升。第5實施形態中,連接構件4之篩網構造體的積層體相當於本發明的第3既定構造。 Further, since the connecting member 4 belonging to the mesh structure at the time of firing of the base material 2 is easily deformed, the internal stress of the connecting member 4 can be alleviated. Furthermore, since the ceramic of the substrate 2 enters the mesh structure of the connecting member 4 Since the gap between the bodies is increased, the adhesion between the connecting member 4 and the substrate 2 is improved, and the strength reliability in the vicinity of the terminal 5 is improved. In the fifth embodiment, the laminated body of the mesh structure of the connecting member 4 corresponds to the third predetermined structure of the present invention.
第5實施形態的實施例5-1至實施例5-4(以下,稱為實施例5),係將鉬製的篩網構造體切斷成直徑6mm的圓形來製作連接構件4。其他構成係與實施例1相同。實施例5-1係設定成引線(wire)線徑0.03mm,平織篩網尺寸(每1英吋的引線條數)150;實施例5-2係設定成引線線徑0.05mm,平織篩網尺寸(每1英吋的引線條數)100;實施例5-3係設定成引線線徑0.10mm,平織篩網尺寸(每1英吋的引線條數)50;實施例5-4係設定成引線線徑0.15mm,平織篩網尺寸(每1英吋的引線條數)40。 In the fifth to fifth embodiments (the fifth embodiment of the fifth embodiment), the mesh structure made of molybdenum was cut into a circular shape having a diameter of 6 mm to form the connecting member 4. The other configuration is the same as that of the first embodiment. Example 5-1 was set to a wire diameter of 0.03 mm, a flat woven mesh size (number of lead wires per 1 inch) 150, and Example 5-2 was set to a wire diameter of 0.05 mm, a plain woven mesh. Dimensions (number of lead bars per 1 inch) 100; Example 5-3 is set to a wire diameter of 0.10 mm, a flat woven mesh size (number of leads per 1 inch) 50; Example 5-4 is set The wire diameter is 0.15 mm, and the size of the flat woven mesh (the number of leads per 1 inch) is 40.
利用與實施例1同樣的評價方法測定之結果,確認到在實施例5-1至實施例5-4的任一者中裂縫產生處的數量為0個,可靠性高。此被認為係因由篩網構造體所構成的連接構件4在陶瓷的燒成時變形,內部應力會被緩和之故。 As a result of measurement by the same evaluation method as in Example 1, it was confirmed that the number of occurrences of cracks in any of Examples 5-1 to 5-4 was zero, and the reliability was high. This is considered to be because the connecting member 4 composed of the mesh structure is deformed during firing of the ceramic, and the internal stress is alleviated.
又,認為藉由作為基材2的材料之陶瓷侵入篩網構造體的網眼,基材2與連接構件4之間的密接性得以提升,連接構件4附近的強度可靠性得以提升。 Further, it is considered that the ceramic as the material of the base material 2 invades the mesh of the mesh structure, the adhesion between the base material 2 and the connecting member 4 is improved, and the strength reliability in the vicinity of the connecting member 4 is improved.
第5實施形態的實施例6-1至實施例6-3(以下,稱為實施例6),係將連接構件4作成積層有三個篩網構造體之三層構造。其他構成係與實施例1相同。 In the embodiment 6-1 to the embodiment 6-3 of the fifth embodiment (hereinafter referred to as the embodiment 6), the connecting member 4 is formed into a three-layer structure in which three mesh structures are laminated. The other configuration is the same as that of the first embodiment.
實施例6-1係設定成引線線徑0.03mm,平織篩網尺寸(每1英吋的引線條數)150;實施例6-2係設定成引線線徑0.05mm,平織篩網尺寸(每1英吋的引線條數)100;實施例6-3係設定成引線線徑0.10mm,平織篩網尺寸(每1英吋的引線條數)50。 Example 6-1 was set to have a wire diameter of 0.03 mm, a flat woven mesh size (number of lead wires per 1 inch) 150, and Example 6-2 was set to a wire diameter of 0.05 mm, and a plain woven mesh size (per The number of lead wires of 1 inch was 100); Example 6-3 was set to have a wire diameter of 0.10 mm and a flat woven mesh size (number of lead wires per 1 inch) 50.
實施例6亦同,利用與實施例1同樣的評價方法測定之結果,確認到實施例6-1至實施例6-3的任一者中裂縫產生處的數量為0個,可靠性高。此被認為係因由篩網構造體所構成的連接構件4在陶瓷的燒成時會變形,內部應力會被緩和之故。 In the same manner as in the sixth embodiment, the results of the measurement by the same evaluation method as in the first embodiment were confirmed to be zero in the number of crack occurrences in any of the examples 6-1 to 6-3, and the reliability was high. This is considered to be because the connecting member 4 composed of the mesh structure is deformed when the ceramic is fired, and the internal stress is alleviated.
又,認為藉由作為基材2的材料之陶瓷侵入篩網構造體的網眼,基材2與連接構件4之間的密接性得以提升,連接構件4附近的強度可靠性得以提升。 Further, it is considered that the ceramic as the material of the base material 2 invades the mesh of the mesh structure, the adhesion between the base material 2 and the connecting member 4 is improved, and the strength reliability in the vicinity of the connecting member 4 is improved.
再者,實施例6中,由於係將篩網構造體作成三層構造,故可使在端子用插入孔2c的加工時刺破連接構件4而使內部電極3損傷之可能性降低。 In addition, in the sixth embodiment, since the mesh structure is formed into a three-layer structure, the connection member 4 can be pierced during the processing of the terminal insertion hole 2c, and the possibility of damage to the internal electrode 3 can be reduced.
再者,積層複數個篩網構造體時,藉由在其積層界面塗布鎢糊料,可改善連接構件4的電氣特性。 Further, when a plurality of mesh structures are laminated, the electrical characteristics of the connecting member 4 can be improved by applying a tungsten paste to the laminated interface.
此外,第5實施形態的引線線徑、篩網尺寸、重疊之篩網構造體的片數等數值係為例示,本發明並不限定於此,即便設定其他的數值也可獲得本發明的作用效果。 Further, the numerical values of the wire diameter, the mesh size, and the number of stacked mesh structures in the fifth embodiment are exemplified, and the present invention is not limited thereto, and the effect of the present invention can be obtained even if other numerical values are set. effect.
Claims (7)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-209383 | 2017-10-30 | ||
| JP2017209383 | 2017-10-30 | ||
| JP2018177025A JP7284561B2 (en) | 2017-10-30 | 2018-09-21 | Electrode embedded material |
| JP2018-177025 | 2018-09-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201933539A true TW201933539A (en) | 2019-08-16 |
| TWI767080B TWI767080B (en) | 2022-06-11 |
Family
ID=66671171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107138138A TWI767080B (en) | 2017-10-30 | 2018-10-29 | Electrode embedded member |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7284561B2 (en) |
| TW (1) | TWI767080B (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4331983B2 (en) | 2003-06-23 | 2009-09-16 | 京セラ株式会社 | Wafer support member and manufacturing method thereof |
| JP2005116914A (en) | 2003-10-10 | 2005-04-28 | Ibiden Co Ltd | Electrode embedding member for plasma generator |
| JP4542485B2 (en) * | 2004-12-14 | 2010-09-15 | 日本碍子株式会社 | Alumina member and manufacturing method thereof |
| JP4421595B2 (en) * | 2006-11-16 | 2010-02-24 | 日本碍子株式会社 | Heating device |
| WO2014119729A1 (en) * | 2013-01-31 | 2014-08-07 | 京セラ株式会社 | Substrate for mounting electronic element, electronic device, and imaging module |
-
2018
- 2018-09-21 JP JP2018177025A patent/JP7284561B2/en active Active
- 2018-10-29 TW TW107138138A patent/TWI767080B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019083310A (en) | 2019-05-30 |
| TWI767080B (en) | 2022-06-11 |
| JP7284561B2 (en) | 2023-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4421595B2 (en) | Heating device | |
| EP3410819B1 (en) | Heater | |
| TWI714352B (en) | Holding device and manufacturing method of holding device | |
| JP6666717B2 (en) | Ceramic members | |
| JP4858319B2 (en) | Wafer holder electrode connection structure | |
| TW201933539A (en) | Electrode embedded member | |
| JP7025268B2 (en) | Ceramic structure | |
| JP7000221B2 (en) | Gas sensor and its manufacturing method | |
| JP2010123862A (en) | Connection part for semiconductor manufacturing apparatus, and method of forming connection part for semiconductor manufacturing apparatus | |
| KR102356748B1 (en) | Electrode embedded memeber | |
| JP7519168B2 (en) | Manufacturing method of ceramic member | |
| US10750611B2 (en) | Electrode embedded member | |
| JP7109262B2 (en) | Electrode embedded material | |
| JP2004031596A (en) | Terminal electrode material | |
| JP7227806B2 (en) | holding device | |
| JP7576413B2 (en) | Joint and substrate holding member | |
| JP7575864B2 (en) | Manufacturing method of electrode-embedded member | |
| JP7109258B2 (en) | Method for manufacturing electrode-embedded member | |
| JP7284560B2 (en) | Electrode embedded material | |
| JP7280059B2 (en) | Method for manufacturing electrode-embedded member | |
| TW201717439A (en) | Piezoelectric element, piezoelectric actuator and piezoelectric transformer | |
| JP2025004713A (en) | Ceramic Susceptor | |
| JP7038027B2 (en) | Manufacturing method of electrode embedded member | |
| JP7010750B2 (en) | Manufacturing method of ceramic member and cushioning member | |
| JP2019175883A (en) | Heating device |