TW201932950A - Array substrate - Google Patents

Abstract

An array substrate includes a plurality of scan lines, a plurality of data lines, a plurality of active devices, a plurality of first electrodes, and a lower polarizer pattern. The active devices are electrically connected to the scan lines and the data lines, respectively. The lower polarizer pattern overlaps the first electrodes, and the lower polarizer pattern has a plurality of lower polarizer slits parallel to each other, wherein: at least one of the scan lines has a scan line slit and overlaps with the lower polarizer pattern; and/or at least one of the data lines has a data line slit and overlaps with the lower polarizer pattern.

Description

Array substrate

The present invention relates to an array substrate, and more particularly to an array substrate relating to photoalignment technology.

In order to align the liquid crystal molecules in the display panel in a predetermined direction, it is often necessary to perform an alignment process in the process of manufacturing the display panel. In the alignment process, the brush-type alignment tends to cause problems such as dust and uneven stress. Therefore, the optical alignment process is another option. In the photo-alignment process, the alignment material layer on the substrate is irradiated with light to chemically react the alignment material layer in a predetermined direction to form an alignment, so that the subsequently filled liquid crystal molecules can be aligned in a predetermined direction.

In the current optical alignment technology, it is necessary to use the polarizer on the optical alignment machine to polarize the light emitted by the light source module. However, because there is a distance between the optical alignment machine and the motherboard, the optical alignment path may generate some light. The error causes the alignment effect to be unsatisfactory, or if the optical alignment machine uses a spliced polarizer, the amount of light accumulated at the splicing is often insufficient, which may result in discontinuous alignment between the regions aligned at different times. defect.

At least one embodiment of the present invention provides a method for manufacturing a panel, which can solve the problem that the amount of accumulated light in a part of the area is insufficient in the optical alignment technique.

At least one embodiment of the present invention provides an array substrate that can solve the problem of alignment defects in a portion of an array substrate in a light alignment technique.

At least one embodiment of the present invention provides a method for manufacturing a panel, comprising the steps of: providing an array substrate including a polarizing pattern; forming an alignment material layer on the array substrate; and providing a light source module, wherein the polarizing pattern is located in the light source module and the alignment material layer Between the light emitted by the light source module passes through the polarizing pattern to optically align the alignment material layer.

At least one embodiment of the present invention provides an array substrate including a plurality of scan lines, a plurality of data lines, a plurality of active elements, a plurality of first electrodes, and a lower polarizing pattern. A plurality of active components are electrically connected to the scan lines and the data lines, respectively. The lower polarizing pattern overlaps the first electrode, and the lower polarizing pattern has a plurality of parallel lower polarizing slits. One of the scan lines has a scan line slit and overlaps with the lower polarizing pattern; and/or one of the data lines has a data line slit and is overlapped with the lower polarizing pattern.

At least one embodiment of the present invention provides an array substrate including a black matrix and an upper polarizing pattern. The black matrix includes a plurality of first slits. The upper polarizing pattern includes a plurality of upper polarizing slits, and the upper polarizing pattern overlaps with the first slit of the black matrix.

One of the objects of the present invention is that it is not necessary to provide a polarizer on the optical alignment machine.

One of the objects of the present invention is to solve the problem that the panel has a matching enthalpy in a partial region.

One of the objects of the present invention is to provide better alignment quality around the scan lines and/or data lines.

One of the objects of the present invention is to provide better alignment quality around the black matrix.

The above described features and advantages of the invention will be apparent from the following description.

The schematic diagrams herein are merely illustrative of some of the embodiments of the invention. Therefore, the shapes, numbers, and proportions of the various elements shown in the drawings are not intended to limit the invention. For example, the actual number, size, and shape of the polarizing patterns in the schematic are for illustrative purposes only and do not imply that the actual number, size, and shape of the polarizing patterns of the present invention must be as shown.

FIG. 1A is a top plan view of an array substrate 10 in accordance with an embodiment of the present invention. Fig. 1B is a cross-sectional view showing a portion AA' of Fig. 1A and a partial peripheral region of the array substrate.

Referring to FIG. 1A and FIG. 1B simultaneously, the array substrate 10 includes a substrate B1, a shielding layer 100, a plurality of scanning lines SL, a plurality of data lines DL, a plurality of active device TFTs, a plurality of first electrodes 140A, and a plurality of second electrodes. 140B and the lower polarizing pattern PL. In the present embodiment, the array substrate 10 is, for example, an active device array substrate.

The shielding layer 100 is formed on the substrate B1. In an embodiment, the material of the substrate B1 may be glass, quartz, organic polymer or other material that can transmit light. In an embodiment, the material of the shielding layer 100 may be metal, alloy, oxide, black resin or other material with low light transmittance. In the present embodiment, the lower polarizing pattern PL and the shielding layer 100 are both formed on the substrate B1 and are in contact with the substrate B1. In an embodiment, the lower polarizing pattern PL and the shielding layer 100 are formed at the same time, for example, and the forming method is, for example, a nano imprint process or an exposure etching process. In an embodiment, the lower polarizing pattern PL includes, for example, a plurality of thin lines P1 parallel to each other, and the line widths of the thin lines P1 are between about 25 nm and 125 nm. In an embodiment, the lower polarizing pattern PL may have a plurality of parallel lower polarizing slits P1O having a width W1 of between about 15 nm and 120 nm. In the present embodiment, the thin lines P1 on the substrate B1 are all parallel to each other and extend in the same direction, but the invention is not limited thereto. In some embodiments, the plurality of pixel regions PR having different designs from each other, the thin lines P1 in the lower polarizing pattern PL corresponding to the different pixel regions PR may have different extending directions.

The active device TFT is formed on the shielding layer 100. In an embodiment, an insulating layer 105 is interposed between the active device TFT and the shielding layer 100. The active device TFT includes a semiconductor layer 110, a gate insulating layer 115, a gate 120, a source 132, and a drain 134. The semiconductor layer 110 is formed on the insulating layer 105. The semiconductor layer 110 is a single layer or a multilayer structure including amorphous germanium, polycrystalline germanium, microcrystalline germanium, single crystal germanium, an organic semiconductor material, an oxide semiconductor material (for example, indium zinc oxide, indium antimony zinc oxide, or Other suitable materials, or combinations thereof, or other suitable materials, or containing dopants in or a combination of the foregoing. A gate insulating layer 115 is formed on the semiconductor layer 110 and the insulating layer 105. The gate 120 is formed on the gate insulating layer 115, and the gate insulating layer 115 is interposed between the semiconductor layer 110 and the gate 120, and the gate 120 is electrically connected to the scan line SL. The source 132 and the drain 134 are formed on the semiconductor layer 110 and electrically connected to the semiconductor layer 110. In one embodiment, the insulating layer 125 is formed on the gate 120 and the gate insulating layer 115. The source 132 and the drain 134 are respectively filled in the opening O1 and the opening O2 of the insulating layer 125 and electrically connected to the semiconductor layer 110. The source 132 is electrically connected to the data line DL.

In the present embodiment, the active device TFT is fabricated by, for example, low temperature poly-silicon (LTPS), but the invention is not limited thereto. Other types of active device TFTs or other methods of fabricating active device TFTs can also be used with the present invention.

In the present embodiment, the scanning line SL has the scanning line slit 120O, and the scanning line slit 120O of the scanning line SL overlaps with a part of the thin line P1. In this embodiment, each of the scan lines SL has a plurality of scan line slits 1200, and each of the scan line slits 120O corresponds to one pixel area PR. However, the present invention is not limited thereto. In other embodiments, the plurality of scan line slits 120O may correspond to one pixel area PR, or one scan line slit 120O may correspond to the plurality of pixel areas PR. In the present embodiment, the extending direction of the scanning line slit 120O is substantially parallel to the extending direction D2 of the corresponding scanning line SL. In one embodiment, the width A1 of the scan line SL is, for example, between 1 micrometer and 6 micrometers, and the width W2 of the scan line slit 120O is, for example, between 0.2 micrometers and 0.6 micrometers. In an embodiment, the width W2 of the scan line slit 120O is substantially 1% to 50% of the width A1 of the corresponding scan line SL. The width W2 of the scanning line slit 120O is the same as the measuring direction of the width A1 of the scanning line SL, for example, in the direction of the extending direction D2 of the vertical scanning line SL.

In the present embodiment, the data line DL has the data line slit 130O, and the data line slit 130O of the data line DL overlaps with the partial thin line P1. In the present embodiment, each of the data lines DL has a plurality of data line slits 1300, and each of the data line slits 130O corresponds to one pixel area PR. However, the present invention is not limited thereto. In other embodiments, the plurality of data line slits 130O may correspond to one pixel area PR, or one of the data line slits 130O may correspond to the plurality of pixel areas PR. In the present embodiment, the extending direction of the data line slit 130O is substantially parallel to the extending direction D1 of the corresponding data line DL. In one embodiment, the width A2 of the data line DL is, for example, between 1 micrometer and 6 micrometers, and the width W3 of the data line slit 130O is, for example, between 0.2 micrometers and 0.6 micrometers. In one embodiment, the width W3 of the data line slit 130O is substantially 1% to 50% of the width A2 of the corresponding data line DL. The width W2 of the data line slit 130O is the same as the measurement direction of the width A2 of the data line DL, for example, in the direction of the extending direction D1 of the vertical data line DL. In an embodiment, the data line DL is zigzag. For example, the extending direction of the data lines DL on the upper and lower sides of each scanning line SL has an angle, and the data corresponding to the pixel region PR of the adjacent column The line DL has different extending directions, but the invention is not limited thereto. In some embodiments, the data line DL has only one extension direction, and the extension direction D1 is exemplified perpendicular to the extension direction D2.

In this embodiment, the first electrode 140A is a pixel electrode, and the first electrode 140A is located in the pixel region PR and is electrically connected to the drain 134 of the active device TFT. In an embodiment, the insulating layer 135 is formed on the source 132 and the drain 134, and the insulating layer 135 has an opening O3. The first electrode 140A fills the opening O3 and is electrically connected to the drain 134. The first electrode 140A overlaps with a portion of the thin line P1. The first electrode 140A has a plurality of electrode slits 140O. In this embodiment, the extending direction of the electrode slit 140O is parallel to the extending direction D1 of the corresponding data line DL, but the invention is not limited thereto. In other embodiments, the extending direction of the electrode slit 140O has an angle with the extending direction D1 of the data line DL. In an embodiment, the electrode slit 140O may have another extending direction different from the extending direction D1 at a position close to the scanning line SL, and another extension is designed by the position where the electrode slit 140O is close to the scanning line SL. The direction can further help the alignment of the liquid crystal. In one embodiment, the angle between the lower polarizing slit P1O and the corresponding electrode slit 140O is between -15 degrees and 15 degrees or between 75 degrees and 105 degrees.

In the embodiment, the array substrate 10 includes a plurality of second electrodes 140B (not shown in FIG. 1A). The second electrode 140B overlaps the first electrode 140A, and an insulating layer 137 is interposed between the first electrode 140A and the first electrode 140A. The second electrode 140B has an opening O4 at a position corresponding to the opening O3, and therefore, the first electrode 140A does not come into contact with the second electrode 140B. In this embodiment, the second electrode 140B is a common electrode, and the second electrode 140B is electrically connected to the common line CL in the peripheral region BR. The common line CL is, for example, the same film layer as the data line DL, that is, patterned by the same material layer. In the present embodiment, the first electrode 140A is located above the second electrode 140B, but the invention is not limited thereto. In other embodiments, the first electrode 140A is located below the second electrode 140B.

The lower alignment material layer 150 is formed, and the lower alignment material layer 150 covers, for example, the first electrode 140A, the second electrode 140B, the active device TFT, and the lower polarizing pattern PL. The lower alignment material layer 150 is, for example, located above the lower polarizing pattern PL. In an embodiment, the method of forming the lower alignment material layer 150 includes, for example, spin coating, concave/convex printing, or inkjet printing. In an embodiment, the lower alignment material layer 150 includes, for example, polyimide or other suitable polymeric material.

A light source module (not shown) is provided, and the lower polarizing pattern PL is located between the light source module and the lower alignment material layer 150. The light source module can, for example, emit unpolarized light UV, which for example comprises ultraviolet light. In the present embodiment, the light UV is irradiated from the bottom up, for example, from the side of the substrate B1 into the inside of the array substrate 10. The light UV is converted into polarized light after passing through the lower polarizing pattern PL, and then the lower alignment material layer 150 is optically aligned to convert the lower alignment material layer 150 into an alignment layer (not shown).

In this embodiment, the lower polarizing pattern PL of the array substrate 10 itself is used to polarize the light UV emitted by the light source module, so that it is not necessary to provide a polarizer on the optical alignment machine. Therefore, the problem of insufficient amount of accumulated light in a partial area can be solved. In the present embodiment, both the scan line SL and the data line DL belong to different film layers from the lower polarized pattern PL, and the partial scan lines SL and the partial data lines DL overlap with the thin lines P1. Therefore, the light UV passing through the lower polarizing pattern PL is irradiated onto the scanning line SL and the data line DL. Since the scan line SL has the scan line slit 120O and the data line DL has the data line slit 130O. Therefore, the light UV emitted by the light source module can pass through the scan line slit 120O and the data line slit 130O, so that the lower alignment material layer 150 overlapping the scan line SL and the data line DL can also be irradiated by the light UV. The alignment quality around the scanning line SL and the data line DL is improved.

2 is a cross-sectional view of an array substrate 20 in accordance with an embodiment of the present invention. It should be noted that the embodiment of FIG. 2 follows the component numbers and parts of the embodiment of FIG. 1A and FIG. 1B, wherein the same or similar elements are used to denote the same or similar elements, and the same technical content is omitted. Description. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Referring to FIG. 2, in the present embodiment, the lower polarizing pattern PL is disposed outside the substrate B1. In other words, the lower polarizing pattern PL and the shielding layer 100 in the present embodiment are respectively located on opposite sides of the substrate B1, and the lower polarizing pattern PL and the shielding layer 100 are not formed in the same process.

The array substrate 20 of the present embodiment includes a lower polarizing pattern PL, and the light polarized light emitted by the light source module is polarized by the lower polarizing pattern PL of the array substrate 20 itself, and it is not necessary to provide a polarizer on the optical alignment machine. Therefore, the problem of insufficient amount of accumulated light in a partial area can be solved. In the present embodiment, both the scan line SL and the data line DL belong to different film layers from the lower polarized pattern PL, and the partial scan lines SL and the partial data lines DL overlap with the thin lines P1. Therefore, the light UV passing through the lower polarizing pattern PL is irradiated onto the scanning line SL and the data line DL. Since the scan line SL has the scan line slit 120O and the data line DL has the data line slit 130O. Therefore, the light UV emitted by the light source module can pass through the scan line slit 120O and the data line slit 130O, so that the lower alignment material layer 150 overlapping the scan line SL and the data line DL can also be irradiated by the light UV. The alignment quality around the scanning line SL and the data line DL is improved.

3 is a cross-sectional view of an array substrate 30 in accordance with an embodiment of the present invention. It should be noted that the embodiment of FIG. 3 follows the component numbers and parts of the embodiment of FIG. 1A and FIG. 1B, wherein the same or similar elements are used to denote the same or similar elements, and the same technical content is omitted. Description. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Referring to FIG. 3, in the present embodiment, the lower polarizing pattern PL and the scan line SL and the gate 120 belong to the same film layer. In one embodiment, the lower polarizing pattern PL and the scan line SL and the gate 120 are formed, for example, in the same process, and the forming method is, for example, a nanoimprint process or an exposure etching process. In the present embodiment, since the light UV passing through the lower polarizing pattern PL does not pass through the scanning line SL, it is not necessary to additionally provide a slit on the scanning line SL.

The array substrate 30 of the present embodiment includes a lower polarizing pattern PL. The lower polarizing pattern PL of the array substrate 30 itself is used to polarize the light UV emitted by the light source module, and it is not necessary to provide a polarizer on the optical alignment machine. Therefore, the problem of insufficient amount of accumulated light in a partial area can be solved. In the present embodiment, the data line DL and the lower polarizing pattern PL belong to different film layers, and a part of the data lines DL overlap with the thin lines P1. Therefore, the light UV passing through the lower polarizing pattern PL is irradiated onto the data line DL. Since the data line DL has the data line slit 130O. Therefore, the light UV emitted by the light source module can pass through the data line slit 130O, so that the lower alignment material layer 150 overlapping the data line DL can also be irradiated by the light UV, thereby improving the alignment quality around the data line DL.

4 is a top plan view of an array substrate 40 in accordance with an embodiment of the present invention. It should be noted that the embodiment of FIG. 4 follows the component numbers and parts of the embodiment of FIG. 1A and FIG. 1B, wherein the same or similar elements are used to denote the same or similar elements, and the same technical content is omitted. Description. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Referring to FIG. 4, in the embodiment, each of the data lines DL has a data line slit 130O, and the extending direction of the data line slit 130O is the extending direction D1 of the data line DL. In an embodiment, the data line slit 130O may extend through the source 132, for example. In the present embodiment, each of the scanning lines SL has one scanning line slit 120O, and the extending direction of the scanning line slit 120O is the extending direction D2 of the scanning line SL. In an embodiment, the scan line slit 120O may pass through the gate 120, for example. Since the scanning line slit 120O and the data line slit 130O occupy a large area in the embodiment, more light UV can pass through the scanning line SL and the slit of the data line DL and the lower alignment material layer. 150 performs light alignment.

The array substrate 40 of the present embodiment includes a lower polarizing pattern PL. The lower polarizing pattern PL of the array substrate 40 itself is used to polarize the light UV emitted by the light source module, and it is not necessary to provide a polarizer on the optical alignment machine. Therefore, it is possible to solve the problem that the panel has insufficient amount of accumulated light in a part of the area. In the present embodiment, both the scan line SL and the data line DL belong to different film layers from the lower polarized pattern PL, and the partial scan lines SL and the partial data lines DL overlap with the thin lines P1. Therefore, the light UV passing through the lower polarizing pattern PL is irradiated onto the scanning line SL and the data line DL. Since the scan line SL has the scan line slit 120O and the data line DL has the data line slit 130O. Therefore, the light UV emitted by the light source module can pass through the scan line slit 120O and the data line slit 130O, so that the lower alignment material layer 150 overlapping the scan line SL and the data line DL can also be irradiated by the light UV. The alignment quality around the scanning line SL and the data line DL is improved.

FIG. 5A is a top plan view of an array substrate 50 in accordance with an embodiment of the present invention. Fig. 5B is a schematic cross-sectional view taken along line BB' of Fig. 5A. It should be noted that the embodiment of FIGS. 5A and 5B follows the component numbers and parts of the embodiment of FIG. 1A and FIG. 1B, wherein the same or similar reference numerals are used to denote the same or similar elements, and the same is omitted. Description of the technical content. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Referring to FIG. 5A and FIG. 5B simultaneously, the array substrate 50 includes a substrate B2, a black matrix BM, an upper polarizing pattern PU, and a color filter element 210.

The black matrix BM and the color filter element 210 are formed on the substrate B2. The color filter element 210 includes, for example, a plurality of filter patterns of different colors, for example, including a red filter pattern, a blue filter pattern, a green filter pattern, and a yellow filter pattern. The black matrix BM separates, for example, filter patterns of different colors. In an embodiment, the black matrix BM includes a first block 200A extending along the extending direction D2 and a second block 200B extending along the extending direction D1, the first block 200A and the second block 200B being interlaced with each other. In an embodiment, the first block 200A of the black matrix BM is disposed, for example, corresponding to the scan line SL, and the second block 200B of the black matrix BM is disposed, for example, corresponding to the data line DL.

In an embodiment, the first block 200A of the black matrix BM has a plurality of first slits 200OA, and the second block 200B of the black matrix BM has a plurality of second slits 200OB. The extending direction of the first slit 200OA is, for example, the same as the extending direction D2 of the first block 200A, and the extending direction of the second slit 200OB is the same as the extending direction D1 of the second block 200B. The extending direction of the second slits 200OB is staggered in the extending direction of the first slits 200OA. The width A3 of the first block 200A is, for example, between 1 micrometer and 8 micrometers, and the width W4 of the first slit 200OA is, for example, between 0.2 micrometers and 0.6 micrometers. In an embodiment, the width W4 of the first slit 200OA is substantially 1% to 50% of the width A3 of the corresponding first block 200A. The width W4 of the first slit 200OA is the same as the measurement direction of the width A3 of the first block 200A, for example, in the direction of the vertical extending direction D2. The width A4 of the second block 200B is, for example, between 1 micrometer and 8 micrometers, and the width W5 of the second slit 200OB is, for example, between 0.2 micrometers and 0.6 micrometers. In an embodiment, the width W5 of the second slit 200OB is substantially 1% to 50% of the width A4 of the corresponding second block 200B. The width W5 of the second slit 200OB is the same as the measurement direction of the width A4 of the second block 200B, for example, measured in the direction of the vertical extension direction D1.

An upper polarizing pattern PU is formed on the substrate B2. In an embodiment, the upper polarizing pattern PU and the black matrix BM are separated by an insulating layer 215. In an embodiment, the upper polarizing pattern PU includes, for example, a plurality of thin lines P2 that are parallel to each other. In one embodiment, the upper polarizing pattern P2 has a plurality of parallel upper polarizing slits P2O, and the width W6 of the upper polarizing slits P2O has a width of between about 15 nm and 120 nm. At least a portion of the thin line P2 overlaps the black matrix BM and the color filter element 210. In an embodiment, at least a portion of the thin line P2 overlaps the first slit 200OA of the black matrix BM and the second slit 200OB.

The upper alignment material layer 250 is formed, and the upper alignment material layer 250 covers, for example, the upper polarizing pattern PU, the black matrix BM, and the color filter element 210. In one embodiment, the method of forming the upper alignment material layer 250 is, for example, spin coating, concave/convex printing, or inkjet printing. In an embodiment, the upper alignment material layer 250 includes, for example, polyimide or other suitable polymeric material.

A light source module is provided, and the upper polarizing pattern PU is located between the light source module and the upper alignment material layer 250. The light source module can, for example, emit unpolarized light UV, which for example comprises ultraviolet light. In the present embodiment, the light UV is irradiated from the top to the bottom, for example, from the outer side of the substrate B2 into the array substrate 50. After the light UV passes through the upper polarizing pattern PU, it is converted into polarized light, and then the upper alignment material layer 250 is optically aligned to convert the upper alignment material layer 250 into an alignment layer.

The array substrate 50 of the present embodiment includes an upper polarizing pattern PU. The upper polarizing pattern PU of the array substrate 50 itself is used to polarize the light UV emitted by the light source module, so that it is not necessary to provide a polarizer on the optical alignment machine. Therefore, the problem of insufficient amount of accumulated light in a partial area can be solved. In the present embodiment, the black matrix BM and the upper polarizing pattern PU belong to different film layers, and a part of the black matrix BM overlaps with the thin line P2. Therefore, the light UV passing through the upper polarizing pattern PU is irradiated to the black matrix BM. Since the black matrix BM has the first slit 200OA and the second slit 200OB. Therefore, the light UV emitted by the light source module can pass through the first slit 200OA and the second slit 200OB, so that the upper alignment material layer 250 overlapping the black matrix BM can also be irradiated by the light UV, thereby improving the black matrix. The quality of the alignment around the BM.

FIG. 6 is a cross-sectional view of an array substrate 60 in accordance with an embodiment of the present invention. It should be noted that the embodiment of FIG. 6 follows the component numbers and parts of the embodiment of FIG. 5A and FIG. 5B, wherein the same or similar elements are used to denote the same or similar elements, and the same technical content is omitted. Description. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Referring to FIG. 6, in the embodiment, the upper polarizing pattern PU is disposed outside the substrate B2. In other words, the upper polarizing pattern PU and the black matrix BM in this embodiment are respectively located on opposite sides of the substrate B2.

The array substrate 60 of the present embodiment includes an upper polarizing pattern PU. The upper polarizing pattern PU of the array substrate 60 itself is used to polarize the light UV emitted by the light source module, so that it is not necessary to provide a polarizer on the optical alignment machine. Therefore, the problem of insufficient amount of accumulated light in a partial area can be solved. In the present embodiment, the black matrix BM and the upper polarizing pattern PU belong to different film layers, and a part of the black matrix BM overlaps with the thin line P2. Therefore, the light UV passing through the upper polarizing pattern PU is irradiated to the black matrix BM. Since the black matrix BM has the first slit 200OA and the second slit 200OB. Therefore, the light UV emitted by the light source module can pass through the first slit 200OA and the second slit 200OB, so that the upper alignment material layer 250 overlapping the black matrix BM can also be irradiated by the light UV, thereby improving the black matrix. The quality of the alignment around the BM.

Figure 7 is a cross-sectional view of a panel in accordance with an embodiment of the present invention. It should be noted that the embodiment of FIG. 7 follows the component numbers and parts of the embodiment of FIG. 1A, FIG. 1B, FIG. 5A, FIG. 5B, wherein the same or similar reference numerals are used to denote the same or similar elements, and Description of the same technical content is omitted. For the description of the omitted portions, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Referring to FIG. 7, the panel includes the array substrate 10 and the array substrate 60. However, the present invention is not limited thereto. The array substrate 10 in the panel may be replaced by the array substrate 20, 30 or 40 in the above embodiment, and the array in the panel. The substrate 60 can be replaced with the array substrate 50 in the above embodiment. The sealant S joins the array substrate 10 and the array substrate 60. The sealant S is, for example, located in the peripheral zone BR of the panel. In one embodiment, the black matrix BM of the array substrate 60 overlaps the scan line SL and the data line DL of the array substrate 10, and the first slit 200OA of the black matrix BM is substantially parallel to the extending direction D2 of the scan line SL, and is black. The extending direction of the second slit 200OB of the matrix BM is substantially parallel to the extending direction D1 of the data line DL.

In one embodiment, the array substrate 10 and the array substrate 60 have a plurality of liquid crystal molecules LC therebetween. In the present embodiment, the liquid crystal molecules LC are exemplified by liquid crystal molecules which can be rotated or switched by a horizontal electric field or liquid crystal molecules which can be rotated or switched by a vertical electric field, but are not limited thereto.

The polarizing pattern P includes a lower polarizing pattern PL and an upper polarizing pattern PU, and the alignment material layer includes a lower alignment material layer 150 and an upper alignment material layer 250. In one embodiment, before the light source module emits light UV through the lower polarizing pattern PL to optically align the lower alignment material layer 150, and the light source module emits light UV through the upper polarizing pattern PU to align the upper alignment material. Before the layer 250 is optically aligned, the array substrate 10 and the array substrate 60 are bonded by the sealant S, but the invention is not limited thereto. In other embodiments, after the light source module emits light UV through the lower polarizing pattern PL to optically align the lower alignment material layer 150, and the light source module emits light UV through the upper polarizing pattern PU to align the upper alignment material. After the layer 250 is optically aligned, the array substrate 10 and the array substrate 60 are bonded by the sealant S.

In the present embodiment, the array substrate 60 has a black matrix BM and a color filter element 210, but the invention is not limited thereto. In other embodiments, the black matrix BM and the color filter component 210 may be disposed on the array substrate 10 to form a color filter on array (COA) structure, and the array substrate 60 may not include The black matrix BM and the color filter element 210.

The array substrate of at least one embodiment of the present invention includes a polarizing pattern. The polarizing pattern of the array substrate itself is used to polarize the light emitted by the light source module, and the polarizing plate is not required to be disposed on the optical alignment machine. Therefore, the problem of insufficient amount of accumulated light in a partial area can be solved.

In an embodiment, the scan line and the data line belong to different layers of the polarized pattern, and part of the scan lines and part of the data lines overlap with the thin lines of the polarized pattern. Therefore, light passing through the polarizing pattern is irradiated to the scanning lines and the data lines. In this embodiment, the scan line has a scan line slit and/or the data line has a data line slit. Therefore, the light emitted by the light source module can pass through the scanning line slit and the data line slit, so that the alignment material layer overlapping the scanning line and the data line can also be irradiated by the light, thereby improving the scanning line and the data line. Orientation quality.

In an embodiment, the black matrix has a first slit and a second slit. Therefore, the light emitted by the light source module can pass through the first slit and the second slit, so that the alignment material layer overlapping the black matrix can also be irradiated with light, thereby improving the alignment quality around the black matrix.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10, 20, 30, 40, 50‧‧‧ array substrates

150, 250‧‧‧ alignment material layer

100‧‧‧shading layer

105, 125, 135, 137, 215‧ ‧ insulation

110‧‧‧Semiconductor layer

115‧‧‧Brake insulation

120‧‧‧ gate

120O, 130O, 140O, P1O, P2O, 200OA, 200OB‧‧ slits

132‧‧‧ source

134‧‧‧汲polar

140A, 140B‧‧‧ electrodes

200A, 200B‧‧‧ blocks

210‧‧‧Color filter elements

A1, A2, A3, A4, W1, W2, W3, W4, W5, W6‧‧‧ width

B1, B2‧‧‧ base

BM‧‧‧ Black Matrix

BR‧‧‧ surrounding area

CL‧‧‧Common line

D1, D2‧‧‧ direction

DL‧‧‧ data line

LC‧‧‧liquid crystal molecules

O1, O2, O3, O4‧‧‧ openings

P, PL, PU‧‧‧ polarized pattern

PR‧‧‧ pixel area

P1, P2‧‧‧ thin line

S‧‧‧ Sealing

SL‧‧‧ scan line

TFT‧‧‧ active components

UV‧‧‧Light

1A is a top plan view of an array substrate in accordance with an embodiment of the present invention.

Fig. 1B is a cross-sectional view showing a portion AA' of Fig. 1A and a partial peripheral region of the array substrate.

2 is a cross-sectional view of an array substrate in accordance with an embodiment of the present invention.

3 is a cross-sectional view of an array substrate in accordance with an embodiment of the present invention.

4 is a top plan view of an array substrate in accordance with an embodiment of the present invention.

FIG. 5A is a top plan view of an array substrate in accordance with an embodiment of the present invention. FIG.

Fig. 5B is a schematic cross-sectional view taken along line BB' of Fig. 5A.

6 is a cross-sectional view of an array substrate in accordance with an embodiment of the present invention.

Figure 7 is a cross-sectional view of a panel in accordance with an embodiment of the present invention.

Claims (4)

An array substrate comprising: a plurality of scan lines and a plurality of data lines; a plurality of active components electrically connected to the scan lines and the data lines; a plurality of first electrodes and a lower polarizing pattern, the lower polarizing pattern overlapping the first electrodes, and the lower polarizing pattern has a plurality of parallel lower polarizing slits, wherein: At least one of the scan lines has a scan line slit and overlaps the lower polarized pattern; and/or At least one of the data lines has a data line slit and overlaps the lower polarizing pattern. The array substrate of claim 1, wherein the first electrodes have a plurality of electrode slits, and an angle between one of the lower polarizing slits and one of the corresponding ones of the electrode slits is - 15 degrees to 15 degrees or 75 degrees to 105 degrees. The array substrate of claim 1, wherein at least one of the scan lines has the scan line slit, and the scan line slit extends substantially parallel to a direction in which the scan line extends. The width of the scan line slit is substantially 1% to 50% of the width of the scan line, and the lower polarized pattern and the scan lines belong to different film layers. The array substrate according to claim 1 or 3, wherein at least one of the data lines has the data line slit, and the extension direction of the data line slit is substantially parallel to the corresponding data line. The extending direction of the data line slit is substantially 1% to 50% of the width of the data line, and the lower polarizing pattern and the data lines belong to different film layers.