TW201939697A - Semiconductor package structure - Google Patents
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Abstract
一種半導體封裝結構,包括可撓性基材、多個第一測試墊、多個第二測試墊、多個第一導電線路、多個第二導電線路及晶片。可撓性基材具有相對的第一表面與第二表面,其中這些第一導電線路設置於第一表面上,並透過貫穿可撓性基材的多個第一導電通孔分別電性連接設置於第二表面上的這些第一測試墊。各第二導電線路包括設置於第一表面上的第二引腳與設置於第二表面上的連接線,且各第二引腳透過貫穿可撓性基材的第二導電通孔連接對應的連接線。這些第二測試墊設置於第二表面上,且各連接線連接對應的第二測試墊。晶片設置於第一表面上,並電性連接這些第一引腳與這些第二引腳。A semiconductor packaging structure includes a flexible substrate, a plurality of first test pads, a plurality of second test pads, a plurality of first conductive circuits, a plurality of second conductive circuits, and a wafer. The flexible substrate has a first surface and a second surface opposite to each other, wherein the first conductive circuits are disposed on the first surface and are electrically connected to each other through a plurality of first conductive through holes penetrating the flexible substrate. These first test pads on the second surface. Each second conductive line includes a second pin provided on the first surface and a connection line provided on the second surface, and each second pin is connected to a corresponding one through a second conductive through hole penetrating the flexible substrate. Connection line. These second test pads are disposed on the second surface, and each connection line is connected to the corresponding second test pad. The chip is disposed on the first surface and is electrically connected to the first pins and the second pins.
Description
本發明是有關於一種封裝結構,且特別是有關於一種半導體封裝結構。The present invention relates to a packaging structure, and more particularly, to a semiconductor packaging structure.
現行的薄膜覆晶(chip on film, COF)封裝結構中的佈線面積有限,為符合高腳數及微間距的設計需求,僅能將各引腳的寬度與任兩相鄰的引腳之間的間距進一步窄化,相應地,對應於引腳設置的的測試墊的面積也會隨之縮減。在測試墊的面積縮減的情況下,用以探觸測試墊的測試探針的針徑隨之細化,不僅提高了測試探針探觸測試墊的難度,且細化的測試探針可能因結構強度不足而易於磨損、彎折或偏移,從而衍生出測試可靠度不佳與測試成本提高等問題。此外,即便測試墊的面積持續縮減仍須面臨最小設置尺寸的限制,此限制也使得引腳的間距無法再縮減,進而局限了高腳數及微間距設計的發展。The current chip on film (COF) package structure has limited wiring area. In order to meet the design requirements of high pin count and fine pitch, the width of each pin can only be between any two adjacent pins. The distance between the leads is further narrowed, and the area of the test pads corresponding to the pins is reduced accordingly. When the area of the test pad is reduced, the pin diameter of the test probe used to touch the test pad is reduced accordingly, which not only improves the difficulty of the test probe to touch the test pad, but also the refined test probe may The structure is not strong enough to be easily worn, bent or shifted, which leads to problems such as poor test reliability and increased test costs. In addition, even if the area of the test pad continues to shrink, it still has to face the limitation of the minimum setting size. This limitation also makes it impossible to reduce the pitch of the pins, which further limits the development of high pin count and micro-pitch design.
本發明提供一種半導體封裝結構,具有極佳的佈線彈性。The invention provides a semiconductor package structure with excellent wiring flexibility.
本發明的半導體封裝結構包括可撓性基材、多個第一測試墊、多個第二測試墊、多個第一導電線路、多個第二導電線路以及晶片。可撓性基材具有相對的第一表面與第二表面。第一表面具有晶片設置區、延伸區以及位於晶片設置區與延伸區之間的中間區。第二表面具有測試區,其中測試區對位於延伸區,且測試區具有第一測試墊區與第二測試墊區,第一測試墊區較第二測試墊區遠離晶片設置區。這些第一測試墊設置於第一測試墊區內,且這些第二測試墊設置於第二測試墊區內。各第一導電線路路包括第一引腳與第一接墊,並設置於第一表面上。這些第一接墊位於延伸區內,各第一引腳自晶片設置區內向外延伸經過中間區而終止於延伸區,並連接對應的第一接墊。這些第一接墊分別對位重疊於這些第一測試墊,並分別透過貫通延伸區與測試區的多個第一導電通孔而電性連接。各第二導電線路包括第二引腳與連接線。這些第二引腳設置於第一表面上,並與這些第一引腳交錯排列。各第二引腳自晶片設置區內向外延伸並終止於中間區。這些連接線設置於第二表面上。各連接線的第一端透過貫穿可撓性基材的第二導電通孔連接對應的第二引腳,且各連接線的第二端連接對應的第二測試墊。晶片設置於晶片設置區內,並電性連接這些第一引腳與這些第二引腳。The semiconductor package structure of the present invention includes a flexible substrate, a plurality of first test pads, a plurality of second test pads, a plurality of first conductive circuits, a plurality of second conductive circuits, and a wafer. The flexible substrate has a first surface and a second surface opposite to each other. The first surface has a wafer setting region, an extension region, and an intermediate region between the wafer setting region and the extension region. The second surface has a test area, wherein the test area pair is located in the extension area, and the test area has a first test pad area and a second test pad area. The first test pad area is farther from the wafer setting area than the second test pad area. The first test pads are disposed in the first test pad region, and the second test pads are disposed in the second test pad region. Each first conductive circuit includes a first pin and a first pad, and is disposed on the first surface. These first pads are located in the extension area, and each first pin extends outward from the chip setting area through the middle area and terminates in the extension area, and is connected to the corresponding first pad. The first pads are respectively aligned with and overlap the first test pads, and are electrically connected through a plurality of first conductive vias penetrating the extension area and the test area. Each second conductive line includes a second pin and a connection line. The second pins are disposed on the first surface and are staggered with the first pins. Each second pin extends outward from the chip setting region and terminates in the middle region. These connecting lines are disposed on the second surface. A first end of each connection line is connected to a corresponding second pin through a second conductive through hole penetrating the flexible substrate, and a second end of each connection line is connected to a corresponding second test pad. The chip is disposed in the chip setting area and is electrically connected to the first pins and the second pins.
基於上述,在本發明的半導體封裝結構中,由於這些第一引腳與這些第二引腳是呈交錯的方式排列,因而增大了任兩相鄰的第一引腳或任兩相鄰的第二引腳的間距,並使得對應連接這些第一引腳的這些第一測試墊與對應連接這些第二引腳的這些第二測試墊有較大的空間作佈局,因此這些第一測試墊與這些第二測試墊的面積或尺寸不會受到這些第一引腳與這些第二引腳微間距佈局的影響而縮減。反觀之,由於將測試區設置於可撓性基材的第二表面,並將測試區劃分為第一測試墊區與第二測試墊區,使第一測試墊區中的第一測試墊對應連接於這些第一引腳,且第二測試墊區中的第二測試墊對應連接於這些第二引腳,這些第一引腳與這些第二引腳不需為了配合這些第一測試墊與這些第二測試墊的最小設置尺寸限制而加大間距,因此可滿足高腳數與微間距的設計需求。此外,這些第一測試墊與這些第二測試墊設置於可撓性基材的同一面,不僅能提高測試探針探測探觸的精確度與可靠度,也能節省測試時間。Based on the above, in the semiconductor package structure of the present invention, since the first pins and the second pins are arranged in a staggered manner, any two adjacent first pins or any two adjacent pins are increased. The distance between the second pins makes the first test pads corresponding to the first pins and the second test pads corresponding to the second pins have a larger space for layout, so these first test pads The area or size of the second test pads is not reduced by the micro-pitch layout of the first pins and the second pins. In contrast, since the test area is set on the second surface of the flexible substrate, and the test area is divided into a first test pad area and a second test pad area, the first test pad in the first test pad area corresponds to Connected to the first pins, and the second test pads in the second test pad area are correspondingly connected to the second pins, and the first pins and the second pins do not need to cooperate with the first test pads and The minimum setting size of these second test pads increases the pitch, so it can meet the design requirements of high pin count and micro pitch. In addition, the first test pads and the second test pads are disposed on the same side of the flexible substrate, which can not only improve the accuracy and reliability of the test probe to detect the touch, but also save the test time.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
圖1A是本發明一實施例的半導體封裝結構的局部俯視示意圖。圖1B是圖1A的半導體封裝結構的局部仰視示意圖。圖1C是圖1A沿Ⅰ-Ⅰ’線段的局部截面示意圖。圖1D是圖1A沿Ⅱ-Ⅱ’線段的局部截面示意圖。特別說明的是,佈設於可撓性基材110上的線路(例如引腳、接墊、測試墊或其它走線)有一部分省略繪示,並未逐一繪示。請參照圖1A至圖1D,在本實施例中,半導體封裝結構100例如是薄膜覆晶封裝結構,其包括可撓性基材110、多個第一測試墊120、多個第二測試墊130、多個第一導電線路140、多個第二導電線路150及晶片160。FIG. 1A is a schematic partial plan view of a semiconductor package structure according to an embodiment of the present invention. FIG. 1B is a partial bottom view of the semiconductor package structure of FIG. 1A. Fig. 1C is a schematic partial cross-sectional view taken along the line I-I 'of Fig. 1A. Fig. 1D is a schematic partial cross-sectional view of Fig. 1A along a line II-II '. It is particularly noted that part of the circuits (such as pins, pads, test pads, or other traces) laid on the flexible substrate 110 are omitted and not shown one by one. Please refer to FIGS. 1A to 1D. In this embodiment, the semiconductor package structure 100 is, for example, a thin-film flip-chip package structure, which includes a flexible substrate 110, a plurality of first test pads 120, and a plurality of second test pads 130. , A plurality of first conductive lines 140, a plurality of second conductive lines 150, and a chip 160.
可撓性基材110的材質例如是聚醯亞胺(PI)、聚酯樹脂(PET)或其他可撓曲的絕緣材質,其中可撓性基材110具有相對的第一表面112與第二表面114,晶片160設置於第一表面112上,且這些第一測試墊120與這些第二測試墊130皆設置於第二表面114上。第一表面112具有晶片設置區112a、延伸區112c以及位於晶片設置區112a與延伸區112c之間的中間區112b,晶片160設置於晶片設置區112a內,各第一導電線路140與各第二導電線路150分別電性連接晶片160,並且自晶片設置區112a內向外延伸。進一步而言,各第一導電線路140設置於第一表面112上,且自晶片設置區112a內向外延伸通過中間區112b而終止於延伸區112c。各第二導電線路150的其中一部分設置於第一表面112上,且自晶片設置區112a內向外延伸並終止於中間區112b。The material of the flexible substrate 110 is, for example, polyimide (PI), polyester resin (PET), or other flexible insulating materials. The flexible substrate 110 has a first surface 112 and a second surface opposite to each other. The surface 114 and the wafer 160 are disposed on the first surface 112, and the first test pads 120 and the second test pads 130 are disposed on the second surface 114. The first surface 112 has a wafer setting region 112a, an extension region 112c, and an intermediate region 112b located between the wafer setting region 112a and the extension region 112c. The wafer 160 is disposed in the wafer setting region 112a. Each of the first conductive lines 140 and each of the second conductive lines 140 and The conductive lines 150 are electrically connected to the chip 160, respectively, and extend outward from the chip setting area 112a. Further, each first conductive line 140 is disposed on the first surface 112, and extends outward from the wafer setting region 112 a through the intermediate region 112 b and terminates in the extended region 112 c. A portion of each of the second conductive lines 150 is disposed on the first surface 112, and extends outward from the wafer setting region 112 a and terminates in the intermediate region 112 b.
第二表面114具有測試區114a,且測試區114a對位重疊於延伸區112c。這些第一測試墊120與這些第二測試墊130皆設置於測試區114a內,進一步而言,測試區114a可劃分為第一測試墊區114a1與第二測試墊區114a2,其中第一測試墊區114a1對應於這些第一導電線路140設置,且第二測試墊區114a2對應於這些第二導電線路150設置。如圖1B所示,第一測試墊區114a1較第二測試墊區114a2遠離晶片設置區112a,也就是說,第一測試墊區114a1與晶片設置區112a之間的最短距離大於第二測試墊區114a2與晶片設置區112a之間的最短距離。另一方面,這些第一測試墊120位於第一測試墊區114a1內,且這些第二測試墊130位於第二測試墊區114a2內。也就是說,任一個第一測試墊120與晶片設置區112a之間的最短距離大於任一個第二測試墊130與晶片設置區112a之間的最短距離。The second surface 114 has a test region 114a, and the test region 114a is aligned with the extension region 112c. The first test pads 120 and the second test pads 130 are both disposed in the test area 114a. Further, the test area 114a can be divided into a first test pad area 114a1 and a second test pad area 114a2, of which the first test pad The region 114a1 is disposed corresponding to the first conductive lines 140, and the second test pad region 114a2 is disposed corresponding to the second conductive lines 150. As shown in FIG. 1B, the first test pad region 114a1 is farther from the wafer setting region 112a than the second test pad region 114a2, that is, the shortest distance between the first test pad region 114a1 and the wafer setting region 112a is greater than the second test pad The shortest distance between the region 114a2 and the wafer setting region 112a. On the other hand, the first test pads 120 are located in the first test pad area 114a1, and the second test pads 130 are located in the second test pad area 114a2. That is, the shortest distance between any one of the first test pads 120 and the wafer setting area 112a is greater than the shortest distance between any one of the second test pads 130 and the wafer setting area 112a.
請繼續參考圖1A至圖1D,在本實施例中,各第一導電線路140包括第一引腳141與第一接墊142,其中這些第一接墊142位於延伸區112c內,且這些第一引腳141自晶片設置區112a內向外延伸經過中間區112b而終止於延伸區112c。並且,每一個第一引腳141會與對應的一個第一接墊142相連接。另一方面,第一表面112上的這些第一接墊142分別對位重疊於第二表面114上的這些第一測試墊120,並且,可撓性基材110中每一個第一接墊142與對應的一個第一測試墊120相重疊處設有一個第一導電通孔143,各第一導電通孔143貫通延伸區112c與測試區114a的第一測試墊區114a1,用以電性連接對應的一組第一接墊142與第一測試墊120。因此,各第一測試墊120可透過對應的第一導電通孔143與對應的第一接墊142電性連接對應的第一引腳141。Please continue to refer to FIGS. 1A to 1D. In this embodiment, each of the first conductive lines 140 includes a first pin 141 and a first pad 142, wherein the first pads 142 are located in the extension region 112c, and the first A pin 141 extends outward from the wafer setting region 112a through the intermediate region 112b and terminates in the extended region 112c. In addition, each first pin 141 is connected to a corresponding first pad 142. On the other hand, the first pads 142 on the first surface 112 are respectively aligned with the first test pads 120 overlapping the second surface 114, and each of the first pads 142 in the flexible substrate 110 is aligned. A first conductive through hole 143 is provided at an overlap with a corresponding first test pad 120, and each of the first conductive through holes 143 penetrates the extension region 112c and the first test pad region 114a1 of the test region 114a for electrical connection. A corresponding set of the first connection pad 142 and the first test pad 120. Therefore, each first test pad 120 can be electrically connected to the corresponding first pin 141 through the corresponding first conductive through hole 143 and the corresponding first pad 142.
各第二導電線路150包括設置於第一表面112上的第二引腳151、設置於第一表面112上的第二接墊152、設置於第二表面114上的第三接墊154以及設置於第二表面114上的連接線155,其中這些第二引腳151與這些第一引腳141以交錯的方式沿著平行於晶片設置區112a的長邊112a1的方向排列,也就是任兩相鄰的第一引腳141之間佈設有一個第二引腳151。進一步而言,這些第二接墊152位於中間區112b內,且這些第二引腳151自晶片設置區112a內向外延伸並終止於中間區112b。並且,每一個第二引腳151會連接對應的一個第二接墊152。另一方面,第一表面112上的這些第二接墊152分別對位重疊於第二表面114上的這些第三接墊154,並且,可撓性基材110中每一個第二接墊152與對應的一個第三接墊154相重疊處設有一個第二導電通孔153,各第二導電通孔153在中間區112b貫穿可撓性基材110,用以電性連接對應的一組第二接墊152與第三接墊154。Each of the second conductive lines 150 includes a second pin 151 provided on the first surface 112, a second pad 152 provided on the first surface 112, a third pad 154 provided on the second surface 114, and The connecting lines 155 on the second surface 114, wherein the second pins 151 and the first pins 141 are arranged in a staggered manner along a direction parallel to the long side 112a1 of the wafer setting area 112a, that is, any two phases A second pin 151 is disposed between the adjacent first pins 141. Further, the second pads 152 are located in the middle region 112b, and the second pins 151 extend outward from the wafer setting region 112a and terminate in the middle region 112b. In addition, each second pin 151 is connected to a corresponding second pad 152. On the other hand, the second pads 152 on the first surface 112 are respectively aligned with the third pads 154 on the second surface 114, and each of the second pads 152 in the flexible substrate 110 is aligned. A second conductive through hole 153 is provided at an overlap with a corresponding third pad 154, and each of the second conductive through holes 153 penetrates the flexible substrate 110 in the middle region 112b for electrically connecting the corresponding group The second pad 152 and the third pad 154.
在本實施例中,各連接線155具有相對的第一端155a與第二端155b,其中各第一端155a位於中間區112b的正下方,且電性連接對應的第三接墊154。因此,各連接線155可透過對應的第三接墊154、第二導電通孔153以及第二接墊152電性連接對應的第二引腳151。各連接線155自中間區112b的正下方延伸至測試區114a的第二測試墊區114a2,並透過第二端155b與對應的第二測試墊130電性連接。因此,各第二測試墊130可透過對應的連接線155、第三接墊154、第二導電通孔153以及第二接墊152電性連接對應的第二引腳151。然而,於其他實施例中,第二導電通孔153可直接設置於第二引腳151與對應的連接線155相重疊處,使得各第二測試墊130僅透過對應的連接線155以及第二導電通孔153即與對應的第二引腳151電性連接,也就是說,省略了第二接墊152與第三接墊154的設置。In this embodiment, each connection line 155 has a first end 155a and a second end 155b opposite to each other, wherein each first end 155a is located directly below the middle region 112b and is electrically connected to the corresponding third pad 154. Therefore, each connection line 155 can be electrically connected to the corresponding second pin 151 through the corresponding third pad 154, the second conductive through hole 153, and the second pad 152. Each connection line 155 extends from directly below the middle region 112b to the second test pad region 114a2 of the test region 114a, and is electrically connected to the corresponding second test pad 130 through the second end 155b. Therefore, each of the second test pads 130 can be electrically connected to the corresponding second pin 151 through the corresponding connection line 155, the third connection pad 154, the second conductive through hole 153, and the second connection pad 152. However, in other embodiments, the second conductive through hole 153 may be directly disposed at the overlapping position of the second pin 151 and the corresponding connection line 155, so that each of the second test pads 130 only passes through the corresponding connection line 155 and the second The conductive via 153 is electrically connected to the corresponding second pin 151, that is, the arrangement of the second pad 152 and the third pad 154 is omitted.
請繼續參考圖1A至圖1D,這些第一測試墊120可分為多個第一群組122,且這些第一群組122沿著平行於晶片設置區112a的長邊112a1的方向接續排列。各第一群組122包括多個第一測試墊120,且各第一群組122中的這些第一測試墊120沿著垂直於晶片設置區112a的長邊112a1的方向排列成至少二排。各第一測試墊120具有平行於晶片設置區112a的長邊112a1的寬度,且這些第一群組122中各排的第一測試墊120的總寬度由最靠近晶片設置區112a向遠離晶片設置區112a逐漸增大。也就是說,這些第一群組122中較遠離晶片設置區112a的這些第一測試墊120的總寬度大於較靠近晶片設置區112a的這些第一測試墊120的總寬度。Please continue to refer to FIG. 1A to FIG. 1D. The first test pads 120 may be divided into a plurality of first groups 122, and the first groups 122 are successively arranged along a direction parallel to the long side 112 a 1 of the wafer setting area 112 a. Each first group 122 includes a plurality of first test pads 120, and the first test pads 120 in each first group 122 are arranged in at least two rows along a direction perpendicular to the long side 112a1 of the wafer setting area 112a. Each first test pad 120 has a width parallel to the long side 112a1 of the wafer setting area 112a, and the total width of the first test pads 120 in each row of these first groups 122 is set from the closest to the wafer setting area 112a to be far away from the wafer The region 112a gradually increases. That is, the total width of the first test pads 120 in the first groups 122 that are farther from the wafer setting region 112a is larger than the total width of the first test pads 120 that are closer to the wafer setting region 112a.
另一方面,這些第二測試墊130可分為多個第二群組132,且這些第二群組132沿著平行於晶片設置區112a的長邊112a1的方向接續排列。各第二群組132包括多個第二測試墊130,且各第二群組132中的這些第二測試墊130沿著垂直於晶片設置區112a的長邊112a1的方向排列成至少二排。各第二測試墊130具有平行於晶片設置區112a的長邊112a1的寬度,且這些第二群組132中各排的第二測試墊130的總寬度由最靠近晶片設置區112a向遠離晶片設置區112a逐漸增大。也就是說,這些第二群組132中較遠離晶片設置區112a的這些第二測試墊130的總寬度大於較靠近晶片設置區112a的這些第二測試墊130的總寬度。On the other hand, the second test pads 130 can be divided into a plurality of second groups 132, and the second groups 132 are successively arranged along a direction parallel to the long side 112a1 of the wafer setting area 112a. Each second group 132 includes a plurality of second test pads 130, and the second test pads 130 in each second group 132 are arranged in at least two rows along a direction perpendicular to the long side 112a1 of the wafer setting area 112a. Each second test pad 130 has a width parallel to the long side 112a1 of the wafer setting area 112a, and the total width of the second test pads 130 in each row of these second groups 132 is set from the closest to the wafer setting area 112a to be far away from the wafer The region 112a gradually increases. That is, the total width of the second test pads 130 in the second group 132 that is farther from the wafer setting area 112a is larger than the total width of the second test pads 130 that are closer to the wafer setting area 112a.
在本實施例中,每一個第一群組122在垂直於晶片設置區112a的長邊112a1的方向上與一個第二群組132對應設置,且各第一群組122中的這些第一測試墊120的數量與對應的第二群組132中的這些第二測試墊130的數量相等。In this embodiment, each first group 122 is disposed corresponding to a second group 132 in a direction perpendicular to the long side 112a1 of the wafer setting area 112a, and these first tests in each first group 122 The number of pads 120 is equal to the number of these second test pads 130 in the corresponding second group 132.
晶片160設置於晶片設置區112a內,並電性連接這些第一引腳141、這些第二引腳151以及多個第三引腳170。在本實施例中,這些第三引腳170可以是輸入引腳,且這些第一引腳141與這些第二引腳151可以是輸出引腳。具體來說,晶片160包括多個第一凸塊161以及多個第二凸塊162,這些第一凸塊161沿晶片設置區112a的長邊112a1相鄰排列,這些第二凸塊162沿晶片設置區112a的長邊112a2相鄰排列。晶片160以覆晶的方式設置於可撓性基材110上,使得各第一凸塊161接合於對應的第一引腳141或對應的的第二引腳151,且各第二凸塊162接合於對應的第三引腳170。The chip 160 is disposed in the chip setting area 112 a and is electrically connected to the first pins 141, the second pins 151, and a plurality of third pins 170. In this embodiment, the third pins 170 may be input pins, and the first pins 141 and the second pins 151 may be output pins. Specifically, the wafer 160 includes a plurality of first bumps 161 and a plurality of second bumps 162. The first bumps 161 are adjacently arranged along the long side 112a1 of the wafer setting area 112a, and the second bumps 162 are along the wafer. The long sides 112a2 of the installation area 112a are arranged next to each other. The wafer 160 is disposed on the flexible substrate 110 in a flip-chip manner, so that each first bump 161 is bonded to the corresponding first pin 141 or the corresponding second pin 151, and each second bump 162 Bonded to the corresponding third pin 170.
請再參照圖1A,可撓性基材110的第一表面112還具有測試區112d,其中測試區112d與延伸區112c分別位於晶片160的相對兩側。這些第三引腳170自晶片設置區112a內向外延伸而終止於測試區112d,並分別電性連接位於測試區112d內的多個第三測試墊180。於測試電性時,電訊號例如是自這些第三測試墊180輸入,再以探針探觸這些第一測試墊120與這些第二測試墊130,以測試輸出的電訊號是否正常。Please refer to FIG. 1A again, the first surface 112 of the flexible substrate 110 further includes a test region 112d, wherein the test region 112d and the extension region 112c are located on opposite sides of the wafer 160, respectively. These third pins 170 extend outward from the chip setting area 112a and terminate at the test area 112d, and are electrically connected to a plurality of third test pads 180 located in the test area 112d, respectively. When testing electrical properties, the electrical signals are input from the third test pads 180, and then the probes are used to probe the first test pads 120 and the second test pads 130 to test whether the output electrical signals are normal.
另一方面,可撓性基材110還具有相對的兩傳輸區115、116以及多個傳輸孔117,其中這些傳輸孔117分別位於傳輸區115與116內,且貫穿可撓性基材110。這些傳輸孔117沿著垂直於晶片設置區112a的長邊112a1的方向排列,且這些傳輸孔117的配置用以與傳輸機構配合而帶動可撓性基材110移動。然而,可撓性基材110的兩傳輸區115、116是在形成半導體封裝結構100的過程中,為方便傳輸帶動可撓性基材110而使用的機制。當半導體封裝結構100製作完成後,半導體封裝結構100的可撓性基材110即可與兩傳輸區115、116分離。On the other hand, the flexible substrate 110 also has two transmission regions 115 and 116 and a plurality of transmission holes 117 opposite to each other. The transmission holes 117 are respectively located in the transmission regions 115 and 116 and penetrate the flexible substrate 110. The transmission holes 117 are arranged along a direction perpendicular to the long side 112a1 of the wafer setting area 112a, and the transmission holes 117 are configured to cooperate with the transmission mechanism to drive the flexible substrate 110 to move. However, the two transmission regions 115 and 116 of the flexible substrate 110 are mechanisms used to facilitate the transmission of the flexible substrate 110 during the process of forming the semiconductor package structure 100. After the semiconductor package structure 100 is manufactured, the flexible substrate 110 of the semiconductor package structure 100 can be separated from the two transmission regions 115 and 116.
此外,請參照圖1C及圖1D,半導體封裝結構100還包括多個防銲層190,分別配置於可撓性基材110的第一表面112與第二表面114上。具體來說,這些防銲層190分別覆蓋部份第一引腳141、部份第二引腳150、部份第三引腳170、第二接墊152、第三接墊154以及部份連接線155,以保護這些電性傳輸線路,避免因刮傷、異物附著或其他因素而造成的電性短路、斷路現象。特別說明,為能清楚描述本發明技術內容,於圖1A及圖1B中省略繪示防銲層190。In addition, please refer to FIG. 1C and FIG. 1D. The semiconductor package structure 100 further includes a plurality of solder resist layers 190 respectively disposed on the first surface 112 and the second surface 114 of the flexible substrate 110. Specifically, these solder mask layers 190 respectively cover a portion of the first pin 141, a portion of the second pin 150, a portion of the third pin 170, a second pad 152, a third pad 154, and a portion of the connection. Line 155 to protect these electrical transmission lines from electrical shorts and disconnections caused by scratches, foreign matter attachment, or other factors. In particular, in order to clearly describe the technical content of the present invention, the solder mask 190 is omitted in FIGS. 1A and 1B.
如上述線路佈設的方式,由於這些第一引腳141與這些第二引腳151是呈交錯的方式排列,因而增大了任兩相鄰的第一引腳141或任兩相鄰的第二引腳151的間距,並使得對應連接這些第一引腳141的這些第一測試墊120與對應連接這些第二引腳151的這些第二測試墊130有較大的空間作佈局,因此這些第一測試墊120與這些第二測試墊130的面積或尺寸不會受到這些第一引腳141與這些第二引腳151微間距佈局的影響而縮減。反觀之,由於將測試區114a設置於可撓性基材110的第二表面114,並將測試區114a劃分為第一測試墊區114a1與第二測試墊區114a2,使第一測試墊區114a1中的第一測試墊120對應連接於這些第一引腳141,且第二測試墊區114a2中的第二測試墊130對應連接於這些第二引腳151,這些第一引腳141與這些第二引腳151不需為了配合這些第一測試墊120與這些第二測試墊130的最小設置尺寸限制而加大間距,因此可滿足高腳數與微間距的設計需求。此外,這些第一測試墊120與這些第二測試墊130設置於可撓性基材110的同一面,不僅能提高測試探針探測探觸的精確度與可靠度,也能節省測試時間。As in the above wiring arrangement, since the first pins 141 and the second pins 151 are arranged in a staggered manner, any two adjacent first pins 141 or any two adjacent second pins are increased. The distance between the pins 151 allows the first test pads 120 corresponding to the first pins 141 and the second test pads 130 corresponding to the second pins 151 to have a larger space for layout. The area or size of a test pad 120 and the second test pads 130 will not be reduced by the micro-pitch layout of the first pins 141 and the second pins 151. In contrast, the test area 114a is disposed on the second surface 114 of the flexible substrate 110, and the test area 114a is divided into a first test pad area 114a1 and a second test pad area 114a2, so that the first test pad area 114a1 The first test pad 120 is connected to the first pins 141, and the second test pad 130 in the second test pad region 114a2 is connected to the second pins 151. The first pins 141 and the first pins 141 are connected to the first pins 141. The two pins 151 do not need to increase the pitch in order to meet the minimum setting size limitation of the first test pads 120 and the second test pads 130, so it can meet the design requirements of high pin counts and fine pitches. In addition, the first test pads 120 and the second test pads 130 are disposed on the same side of the flexible substrate 110, which can not only improve the accuracy and reliability of the test probe detection, but also save test time.
以下將列舉其他實施例以作為說明。在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。Other embodiments will be listed below for illustration. It must be noted here that the following embodiments use the component numbers and parts of the foregoing embodiments, in which the same reference numerals are used to indicate the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.
圖2是本發明另一實施例的半導體封裝結構的局部俯視示意圖。請參照圖2,圖2的半導體封裝結構100a與圖1A的半導體封裝結構100的主要差異在於:各第二引腳151a延伸至中間區112b與延伸區112c的分界線,並終止於此分界線。進一步而言,在各第二引腳151a自晶片設置區112a內向外延伸並與位於中間區112b內對應的第二接墊152相連接後,各第二引腳151a持續朝向中間區112b與延伸區112c的分界線延伸,並終止於此分界線。藉此,在完成測試並裁切掉測試區114a後,這些第一引腳141與這些第二引腳151a的端部皆終止於相同的位置。對於後續的外引腳接合製程,即以這些第一引腳141與這些第二引腳151a的端部連接外部元件的端子,本實施例的配置可簡化接合製程並降低外部元件端子的設計複雜度。FIG. 2 is a schematic partial plan view of a semiconductor package structure according to another embodiment of the present invention. Please refer to FIG. 2. The main difference between the semiconductor package structure 100a of FIG. 2 and the semiconductor package structure 100 of FIG. 1A is that each second pin 151a extends to the boundary between the intermediate region 112b and the extended region 112c and terminates at this boundary . Further, after the second pins 151a extend outward from the wafer setting region 112a and are connected to the corresponding second pads 152 located in the intermediate region 112b, the second pins 151a continue to extend toward the intermediate region 112b and extend. The boundary of the zone 112c extends and ends at this boundary. Therefore, after the test is completed and the test area 114a is cut out, the ends of the first pins 141 and the second pins 151a are terminated at the same position. For the subsequent external pin bonding process, that is, the terminals connecting external components with the ends of the first pins 141 and the second pins 151a, the configuration of this embodiment can simplify the bonding process and reduce the design complexity of the external component terminals. degree.
圖3是本發明又一實施例的半導體封裝結構的局部仰視示意圖。請參照圖3,圖3的半導體封裝結構100b與圖1B的半導體封裝結構100的主要差異在於:各第一群組122中的至少一排具有對稱排列的二個第一測試墊120b,且各第二群組132中的至少一排具有對稱排列的二個第二測試墊130b。進一步而言,各第一群組122中對稱排列且成排的這兩個第一測試墊120b較其他第一測試墊120b遠離晶片設置區112a,且各第二群組132中對稱排列且成排的這兩個第二測試墊130b較其他第二測試墊130b遠離晶片設置區112a。基於上述線路佈設方式,可充分利用第二表面114的空間來設置這些第一測試墊120b與這些第二測試墊130b。特別說明的是,本實施例並不限制對稱排列的測試墊的排數,在其他實施例中,對稱排列的測試墊的排數可以是多排。3 is a schematic bottom view of a semiconductor package structure according to another embodiment of the present invention. Please refer to FIG. 3. The main difference between the semiconductor package structure 100b of FIG. 3 and the semiconductor package structure 100 of FIG. 1B is that at least one row of each first group 122 has two first test pads 120b arranged symmetrically, and At least one row in the second group 132 has two second test pads 130b arranged symmetrically. Further, the two first test pads 120b arranged symmetrically and in a row in each of the first groups 122 are farther away from the wafer setting area 112a than the other first test pads 120b, and are symmetrically arranged and formed in each of the second groups 132. The two second test pads 130b in the row are farther from the wafer setting area 112a than the other second test pads 130b. Based on the circuit layout method described above, the space of the second surface 114 can be used to set the first test pads 120b and the second test pads 130b. In particular, this embodiment does not limit the number of rows of symmetrically arranged test pads. In other embodiments, the number of rows of symmetrically arranged test pads may be multiple.
綜上所述,在本發明的半導體封裝結構中,由於這些第一引腳與這些第二引腳是呈交錯的方式排列,因而增大了任兩相鄰的第一引腳或任兩相鄰的第二引腳的間距,並使得對應連接這些第一引腳的這些第一測試墊與對應連接這些第二引腳的這些第二測試墊有較大的空間作佈局,因此這些第一測試墊與這些第二測試墊的面積或尺寸不會受到這些第一引腳與這些第二引腳微間距佈局的影響而縮減。反觀之,由於將測試區設置於可撓性基材的第二表面,並將測試區劃分為第一測試墊區與第二測試墊區,使第一測試墊區中的第一測試墊對應連接於這些第一引腳,且第二測試墊區中的第二測試墊對應連接於這些第二引腳,這些第一引腳與這些第二引腳不需為了配合這些第一測試墊與這些第二測試墊的最小設置尺寸限制而加大間距,因此可滿足高腳數與微間距的設計需求。此外,這些第一測試墊與這些第二測試墊設置於可撓性基材的同一面,不僅能提高測試探針探測探觸的精確度與可靠度,也能節省測試時間。In summary, in the semiconductor package structure of the present invention, since the first pins and the second pins are arranged in a staggered manner, any two adjacent first pins or any two phases are increased. The distance between adjacent second pins makes the first test pads corresponding to the first pins and the second test pads corresponding to the second pins have a larger space for layout, so these first The area or size of the test pads and the second test pads will not be reduced by the micro-pitch layout of the first pins and the second pins. In contrast, since the test area is set on the second surface of the flexible substrate, and the test area is divided into a first test pad area and a second test pad area, the first test pad in the first test pad area corresponds to Connected to the first pins, and the second test pads in the second test pad area are correspondingly connected to the second pins, and the first pins and the second pins do not need to cooperate with the first test pads and The minimum setting size of these second test pads increases the pitch, so it can meet the design requirements of high pin count and micro pitch. In addition, the first test pads and the second test pads are disposed on the same side of the flexible substrate, which can not only improve the accuracy and reliability of the test probe to detect the touch, but also save the test time.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
100、100a、100b‧‧‧半導體封裝結構100, 100a, 100b ‧‧‧ semiconductor package structure
110‧‧‧可撓性基材110‧‧‧ flexible substrate
112‧‧‧第一表面112‧‧‧first surface
112a‧‧‧晶片設置區112a‧‧‧ Wafer Setting Area
112a1、112a2‧‧‧長邊112a1, 112a2 ‧‧‧ long side
112b‧‧‧中間區112b‧‧‧Middle
112c‧‧‧延伸區112c‧‧‧Extension
112d‧‧‧測試區112d‧‧‧Test Area
114‧‧‧第二表面114‧‧‧Second surface
114a‧‧‧測試區114a‧‧‧Test Area
114a1‧‧‧第一測試墊區114a1‧‧‧The first test pad area
114a2‧‧‧第二測試墊區114a2‧‧‧Second Test Pad Area
115、116‧‧‧傳輸區115, 116‧‧‧ transmission area
117‧‧‧傳輸孔117‧‧‧ transmission hole
120、120b‧‧‧第一測試墊120, 120b‧‧‧first test pad
122‧‧‧第一群組122‧‧‧The first group
130、130b‧‧‧第二測試墊130, 130b‧‧‧Second Test Pad
132‧‧‧第二群組132‧‧‧Second Group
140‧‧‧第一導電線路140‧‧‧The first conductive line
141‧‧‧第一引腳141‧‧‧first pin
142‧‧‧第一接墊142‧‧‧The first pad
143‧‧‧第一導電通孔143‧‧‧first conductive via
150‧‧‧第二導電線路150‧‧‧ the second conductive line
151、151a‧‧‧第二引腳151, 151a‧‧‧Second pin
152‧‧‧第二接墊152‧‧‧Second pad
153‧‧‧第二導電通孔153‧‧‧Second conductive via
154‧‧‧第三接墊154‧‧‧The third pad
155‧‧‧連接線155‧‧‧Connecting cable
155a‧‧‧第一端155a‧‧‧ the first end
155b‧‧‧第二端155b‧‧‧ second end
160‧‧‧晶片160‧‧‧Chip
161‧‧‧第一凸塊161‧‧‧The first bump
162‧‧‧第二凸塊162‧‧‧Second bump
170‧‧‧第三引腳170‧‧‧ third pin
180‧‧‧第三測試墊180‧‧‧Third test pad
190‧‧‧防銲層190‧‧‧solder mask
圖1A是本發明一實施例的半導體封裝結構的局部俯視示意圖。 圖1B是圖1A的半導體封裝結構的局部仰視示意圖。 圖1C是圖1A沿Ⅰ-Ⅰ’線段的局部截面示意圖。 圖1D是圖1A沿Ⅱ-Ⅱ’線段的局部截面示意圖。 圖2是本發明另一實施例的半導體封裝結構的局部俯視示意圖。 圖3是本發明又一實施例的半導體封裝結構的局部仰視示意圖。FIG. 1A is a schematic partial plan view of a semiconductor package structure according to an embodiment of the present invention. FIG. 1B is a partial bottom view of the semiconductor package structure of FIG. 1A. Fig. 1C is a schematic partial cross-sectional view taken along the line I-I 'of Fig. 1A. Fig. 1D is a schematic partial cross-sectional view of Fig. 1A along a line II-II '. FIG. 2 is a schematic partial plan view of a semiconductor package structure according to another embodiment of the present invention. 3 is a schematic bottom view of a semiconductor package structure according to another embodiment of the present invention.
Claims (10)
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| TW107109150A TWI700797B (en) | 2018-03-16 | 2018-03-16 | Semiconductor package structure |
| CN201810486450.4A CN110277363B (en) | 2018-03-16 | 2018-05-21 | Semiconductor packaging structure |
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| TW107109150A TWI700797B (en) | 2018-03-16 | 2018-03-16 | Semiconductor package structure |
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| TWI700797B TWI700797B (en) | 2020-08-01 |
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| CN110611989A (en) * | 2019-10-29 | 2019-12-24 | 业成科技(成都)有限公司 | Circuit boards and electronic devices |
| CN111508931B (en) * | 2020-04-20 | 2022-06-03 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof |
| TWI760737B (en) * | 2020-04-30 | 2022-04-11 | 南茂科技股份有限公司 | Flexible circuit substrate and chip on film package structure |
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| US6562641B1 (en) * | 2000-08-22 | 2003-05-13 | Micron Technology, Inc. | Apparatus and methods of semiconductor packages having circuit-bearing interconnect components |
| TW200939408A (en) * | 2008-03-05 | 2009-09-16 | Chipmos Technologies Inc | Chip carrier and chip package structure using the same |
| JP2010206027A (en) * | 2009-03-04 | 2010-09-16 | Renesas Electronics Corp | Tcp semiconductor device |
| JP2011249527A (en) * | 2010-05-26 | 2011-12-08 | Stanley Electric Co Ltd | Circuit module |
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| TWI571642B (en) * | 2015-09-10 | 2017-02-21 | 新特系統股份有限公司 | Test apparatus and method for testing multiple connection pads of a wafer using a single probe |
| KR102525875B1 (en) * | 2016-06-24 | 2023-04-27 | 삼성전자주식회사 | Film packages, package modules, and methods of forming packages |
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| CN110277363B (en) | 2021-05-04 |
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