TW201939642A - Substrate mounting structure and plasma processing apparatus capable of reducing sediment adhered between the inner surface of a substrate and a mounting table - Google Patents

Abstract

Sediment adhered between the inner surface of a substrate and a mounting table is reduced. A substrate mounting structure 130 includes a mounting table 150, a focus ring 131, and a supporting member 132. The focus ring 131 surrounds a mounting surface 152a of the mounting table 150 on which a substrate W is mounted and is disposed at a position lower than the mounting surface 152a. The supporting member 132 is disposed below the focus ring 131 and supports the focus ring 131. In addition, the focus ring 131 has an upper ring member 131a and a lower ring member 131b. The lower ring member 131b constitutes a lower portion of the focus ring 131 and covers the supporting member 132. The upper ring member 131a constitutes an upper portion of the focus ring 131, and the distance between at least a portion of the side surface 1310 on the mounting table 150 side and the side surface of the mounting table 150 is longer than the distance between the side surface 1311 on the mounting table 150 side of the lower ring member 131b and the side surface of the mounting table 150.

Description

Substrate mounting structure and plasma processing device

Various aspects and embodiments of the present invention relate to a substrate mounting structure and a plasma processing apparatus.

In the manufacturing process of semiconductor wafers and glass substrates for FPD (Flat Panel Display), there are processes such as performing an etching process and a film forming process using a plasma on the substrate. In a plasma processing apparatus that performs these processes, a substrate is placed on a mounting table in a vacuum chamber, and a processing gas is plasmatized in a space above the mounting table to perform plasma processing on the substrate. In addition, a member called a focus ring is arranged around the mounting surface of the substrate mounting table to improve the uniformity of the plasma near the edge of the substrate.

In the plasma processing, the substrate is cooled by the mounting table, and the balance between the heating by the plasma and the cooling by the mounting table is maintained at a temperature specified in the processing conditions. Therefore, in the plasma processing, the temperature of the mounting table is relatively lower than the temperature of the components in the chamber such as the focus ring. Therefore, the components of the reaction byproducts (hereinafter referred to as deposits) generated by the plasma enter the gap between the focus ring and the substrate into the substrate and the mounting table, and are cooled by the mounting table. A deposit may be formed between the back surface of the substrate and the mounting table. Thereby, in the process of processing a plurality of substrates, the substrate floats from the mounting table due to deposits, and there may be a case where the cooling gas supplied between the inside of the substrate and the mounting table leaks.

In order to prevent this, a technology is known in which a focus ring is disposed on a flange portion of a mounting table with a heat transfer member interposed therebetween, and the focus ring is cooled by the heat transfer member (see, for example, Patent Document 1 below). As the focus ring is cooled, the components of the deposit also adhere to the focus ring. This makes it possible to reduce the amount of components that enter the deposit between the back surface of the substrate and the mounting table.

[Prior technical literature]
[Patent Literature]

[Patent Document 1] JP 2012-209359

[Problems to be solved by the invention]

In addition, in the case of a mounting table having a flange, it is possible to arrange a focusing ring with a heat transfer member interposed therebetween, but it is difficult to cool the focusing ring on a mounting table having no flange. Therefore, it is difficult to reduce the amount of components that penetrate into the deposit between the back surface of the substrate and the mounting table.

[Means to solve the problem]

A substrate mounting structure of one aspect of the present disclosure includes a mounting table, a ring member, and a support member. The mounting table mounts a substrate on an upper mounting surface. The ring member surrounds the mounting surface and is arranged at a position lower than the mounting surface. The supporting member is disposed below the ring member and supports the ring member. The ring member includes an upper ring member and a lower ring member. The lower ring member constitutes the lower portion of the ring member and covers the support member. The upper ring member constitutes the upper part of the ring member, and the distance between at least a part of the side surface on the mounting table side and the side surface of the mounting table is longer than the distance between the side surface on the mounting table side of the lower ring member and the side surface of the mounting table.

[Effect of the invention]

According to various aspects and embodiments of the present disclosure, it is possible to reduce deposits between the back surface of the substrate and the mounting table.

Hereinafter, embodiments of the disclosed substrate mounting structure and plasma processing apparatus will be described in detail based on the drawings. The following embodiments are not intended to limit the disclosed substrate mounting structure and plasma processing apparatus.

[Configuration of Plasma Processing Device 1]
FIG. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus 1 according to an embodiment of the present disclosure. The plasma processing apparatus 1 includes a main body 10 and a control device 20. The plasma processing apparatus 1 is an apparatus for etching a metal oxide film or the like formed on a substrate W to be processed by plasma. In this embodiment, the substrate W is, for example, a rectangular glass substrate for an FPD panel, and a plurality of TFT (Thin Film Transistor) elements are formed on the substrate W through an etching process of the plasma processing apparatus 1.

The main body 10 has, for example, an airtight chamber 101 having a rectangular tube shape formed by anodized aluminum or the like on the inner wall surface. The chamber 101 is grounded. The chamber 101 is divided into upper and lower sides by a dielectric wall 102. The upper side of the dielectric wall 102 becomes an antenna chamber 103 for receiving an antenna, and the lower side of the dielectric wall 102 becomes a processing chamber 104 for generating plasma. The dielectric wall 102 is made of ceramic such as Al ₂ O ₃ or quartz, and constitutes the top wall of the processing chamber 104.

An opening 106 for carrying the substrate W in and out of the processing chamber 104 is provided on a side wall 104 a of the processing chamber 104. The opening 106 can be opened and closed by a gate valve G. By controlling the gate valve G to the open state, the substrate W can be carried in and out through the opening 106.

A support shed 105 is provided between the side wall 103 a of the antenna chamber 103 and the side wall 104 a of the processing chamber 104 in the chamber 101. The dielectric wall 102 is supported by a support shed 105.

A shower frame 111 for supplying a processing gas into the processing chamber 104 is embedded in a lower portion of the dielectric body wall 102. The shower frame 111 is, for example, suspended from the top of the chamber 101 by a plurality of booms (not shown).

The shower frame 111 is made of, for example, a conductive material such as aluminum whose surface is anodized. A gas diffusion chamber extending in the horizontal direction is formed inside the shower frame 111, and the gas diffusion chamber communicates with a plurality of gas discharge holes 112 extending downward.

A gas supply pipe 124 connected to the gas diffusion chamber in the shower frame 111 is provided at a slightly center of the upper surface of the dielectric wall 102. The gas supply pipe 124 penetrates from the top of the antenna chamber 103 to the outside of the chamber 101 and is connected to the gas supply unit 120.

The gas supply unit 120 includes a gas supply source 121, a flow controller 122, and a valve 123. The flow controller 122 is, for example, an MFC (Mass Flow Controller). The flow controller 122 is connected to a gas supply source 121 that supplies a processing gas containing, for example, fluorine, and controls the flow rate of the processing gas supplied from the gas supply source 121 into the processing chamber 104. The valve 123 controls the supply and the stop of the supply of the process gas to the gas supply pipe 124 by the flow controller 122.

The processing gas supplied from the gas supply unit 120 is supplied into the shower housing 111 through the gas supply pipe 124 and diffuses in the gas diffusion chamber of the shower housing 111. Next, the processing gas diffused in the gas diffusion chamber is discharged from the gas discharge hole 112 below the shower frame 111 into the space in the processing chamber 104.

An antenna 113 is disposed in the antenna chamber 103. The antenna 113 includes an antenna line 113 a formed of a highly conductive metal such as copper and aluminum. The antenna line 113a is formed in an arbitrary shape such as a loop shape and a spiral shape. The antenna 113 is supported on the dielectric wall 102 by a spacer 117 made of an insulating member.

The terminal 118 of the antenna line 113 a is connected to one end of a power feeding member 116 extending upwardly of the antenna chamber 103. The other end of the power supply member 116 is connected to one end of a power supply line 119, and the other end of the power supply line 119 is connected to a high-frequency power source 115 through an integrator 114. The high-frequency power source 115 supplies the antenna 113 with high-frequency power at a frequency capable of generating plasma through the integrator 114, the power supply line 119, the power supply member 116, and the terminal 118. Thereby, an induction electric field is formed in the processing chamber 104 located below the antenna 113, and the processing gas supplied to the processing chamber 104 is plasmatized by the induced electric field, and an inductively coupled plasma is generated in the processing chamber 104. The shower housing 111 and the antenna 113 are examples of a plasma generating unit.

A substrate mounting structure 130 on which the substrate W is mounted is disposed in the processing chamber 104. The substrate mounting structure 130 includes a focus ring 131, a support member 132, and a mounting table 150. The substrate W is placed on a placing surface 152 a on the upper portion of the placing table 150. The focus ring 131 surrounds the mounting surface 152a, and is arranged so that the upper surface thereof may be lower than the mounting surface 152a. The focus ring 131 is formed in a ring shape by an insulating material such as quartz or ceramic. The focus ring 131 may be configured by arranging a plurality of members in a ring shape. The focus ring 131 is an example of a ring member. The support member 132 is disposed below the focus ring 131 and supports the focus ring 131. The support member 132 is made of, for example, polytetrafluoroethylene or the like, and surrounds the side surface of the mounting table 150. The side surface of the support member 132 is surrounded by a protective member 133 made of, for example, ceramics.

The mounting table 150 includes a base 151 and an electrostatic chuck 152. The base 151 is made of a conductive material such as aluminum, and functions as a lower electrode. The base 151 is supported on the bottom of the chamber 101 via an insulating member 156 such as ceramic. A flow path 151a for circulating a heat medium for temperature control is provided inside the base 151. By circulating the heat medium controlled to a predetermined temperature in the flow path 151a, the base 151 is controlled to a predetermined temperature by cooling or heating, and the heat of the base 151 is transmitted to the electrostatic chuck 152.

The base 151 is connected to a high-frequency power source 140 through an integrator 141. The high-frequency power source 140 has a frequency lower than the frequency of the high-frequency power generated by the high-frequency power source 115 and supplies high-frequency power at a frequency capable of forming a self-bias to the base 151 through the integrator 141. By supplying high-frequency power to the base 151 from the high-frequency power source 140, ions are sucked into the substrate W placed on the mounting surface 152a.

The electrostatic chuck 152 is formed by solvent spraying, and has an electrode 153 inside the ceramic spraying layer. The electrode 153 is connected to a DC power source 155. The upper surface of the electrostatic chuck 152 is a mounting surface 152 a on which the substrate W is mounted. The electrostatic chuck 152 sucks and holds the substrate W on the mounting surface 152 a due to a Coulomb force generated by a DC voltage applied from the DC power source 155 to the electrode 153.

A heat transfer gas such as helium is supplied inside the base 151 under the electrostatic chuck 152 through a pipe 157. The heat transfer gas supplied to the base 151 passes through the electrostatic chuck 152 and is supplied from a plurality of supply holes 154 formed in the mounting surface 152 a between the mounting surface 152 a and the lower surface of the substrate W. By controlling the pressure of the heat transfer gas, the amount of heat transferred from the electrostatic chuck 152 to the substrate W can be controlled.

In addition, a partition plate 107 is provided outside the protective member 133 so as to surround the mounting table 150. The partition 107 is constituted by a plurality of members, and an opening is formed between the members. An exhaust port 160 is formed at the bottom of the chamber 101, and an exhaust device 161 such as a vacuum pump is connected to the exhaust port 160. The inside of the processing chamber 104 is evacuated by the exhaust device 161.

The control device 20 includes a memory and a processor. The processor in the control device 20 reads out and executes the programs and recipes of the memory stored in the control device 20 and controls each part of the main body 10.

[Details of the substrate mounting structure 130]
FIG. 2 is an enlarged cross-sectional view showing an example of the substrate mounting structure 130. FIG. 3 is a plan view showing an example of a positional relationship between the substrate W, the mounting table 150 and the focus ring 131. In addition, in FIG. 2, the base table 151 and the electrostatic chuck 152 are depicted as the mounting table 150. In this embodiment, the area of the substrate W is larger than the area of the mounting surface 152a. Therefore, the end of the substrate W is exposed outside the region of the mounting surface 152a. The length d1 of the end portion of the substrate W exposed from the region of the mounting surface 152a is 3 mm, for example.

The focus ring 131 is disposed at a position lower than the placement surface 152a. The distance d2 between the upper surface of the focus ring 131 and the mounting surface 152a is, for example, 0.1 to 0.3 mm. The thickness d3 of the focus ring 131 is, for example, 10 mm. The focus ring 131 includes an upper ring member 131 a constituting an upper portion of the focus ring 131 and a lower ring member 131 b constituting a lower portion of the focus ring 131. The thickness d4 of the upper ring member 131a is, for example, 5 mm. As shown in FIG. 2, the upper ring member 131 a and the lower ring member 131 b have a stepped portion, for example. Thereby, a gap 30 is formed between the side surface 1310 on the mounting table 150 side of the upper ring member 131a and the side surface of the mounting table 150. The lower ring member 131 b covers an upper portion of the support member 132. In addition, the part on the mounting table 150 side of the upper ring member 131a and the lower ring member 131b may have a step difference of two or more steps. In addition, the upper ring member 131a and the lower ring member 131b may be configured as a single body, or may be configured by joining or stacking individual members.

In this embodiment, the distance between at least a part of the side surface 1310 of the upper ring member 131a and the side surface of the mounting table 150 is longer than the distance between the side surface 1311 of the lower ring member 131b and the side surface of the mounting table 150. In this embodiment, the side surface 1310 of the upper ring member 131 a is formed in parallel with the side surface of the mounting table 150. The distance d5 between the side surface 1310 of the upper ring member 131a and the side surface of the mounting table 150 is, for example, 0.75 mm.

Among them, as shown in FIG. 4, for example, a comparative example using a flat focus ring 131 'without a step on the side surface of the mounting table 150 side is considered. Fig. 4 is an enlarged cross-sectional view showing a positional relationship between the substrate W, the stage 150, and the focus ring 131 'in a comparative example. After the plasma treatment is performed, a component 31 of a deposit is generated in the processing chamber 104 by the plasma of the processing gas. Although most of the generated component 31 is exhausted through the partition 107 and the exhaust port 160, a part of the component 31 drifts in the processing chamber 104 and passes through the lower surface of the substrate W and the upper surface of the focus ring 131 '. The gap between them reaches the gap between the mounting table 150 and the substrate W.

When the temperature of the member surface is high, it is difficult to form a deposit on the surface even if the component 31 of the deposit is contacted on the surface. However, when the temperature of the member surface is low, after the surface contacts the component 31 of the deposit, it is easy to form a deposit on the surface. Since the temperature of the members such as the focus ring 131 'is not controlled, the temperature rises due to the heat input from the plasma. On the other hand, the substrate W and the mounting table 150 are controlled to a predetermined temperature by a heat medium flowing through the base 151. Therefore, the substrate W and the mounting table 150 are relatively cooler than members such as the focus ring 131 '.

Therefore, the component 31 that has entered the deposit between the lower surface of the substrate W and the upper surface of the focus ring 131 'adheres to the side surface of the mounting table 150 and forms a deposit 32 between the substrate W and the mounting table 150. As a result, during processing of the plurality of substrates W, the thickness of the deposit between the mounting table 150 and the substrate W increases. Due to friction caused by the thermal expansion difference between the focusing ring 131 ′ and the mounting table 150, the deposits are peeled off and carried. On the mounting table 150. Next, as shown in FIG. 4, for example, the substrate W may float from the mounting table 150. When the substrate W floats from the mounting table 150, the airtightness between the back surface of the substrate W and the mounting surface 152a decreases, and a heat transfer gas supplied between the back surface of the substrate W and the mounting surface 152a leaks. When the heat transfer gas leaks, it is difficult to control the temperature of the substrate W with high accuracy. Therefore, the process is stopped and the mounting table 150 is cleaned. Therefore, the yield of the process is reduced.

On the other hand, in the substrate mounting structure 130 of the present embodiment, a gap 30 is formed between the side surface 1310 on the mounting table 150 side of the upper ring member 131 a and the side surface of the mounting table 150. Therefore, the component 31 of the deposit that has penetrated into the gap between the lower surface of the substrate W and the upper surface of the upper ring member 131 a is diffused in the gap 30. Therefore, although the component 31 of the deposit is attached to the side surface of the mounting table 150 and between the substrate W and the mounting table 150 to form a deposit, the growth rate of the deposit in the lateral direction is lower than that of the comparative example. In addition, due to the existence of the gap 30, there is no case where the mounting table 150 rubs against the focusing ring 131, and the deposited matter is peeled off and mounted on the mounting table 150. Therefore, the period during which the heat transfer gas leaks becomes longer, and the period during which cleaning of the mounting table 150 is performed becomes longer. Therefore, the productivity of the process can be improved.

[Width of the gap 30]
Next, an experiment was performed on a range where deposits adhered to the side surface of the mounting table 150. In the experiment, for example, a substrate mounting structure 130 ′ shown in FIG. 5 is used. FIG. 5 is an enlarged sectional view showing an example of a substrate mounting structure 130 ′ used in an experiment. In the substrate mounting structure 130 shown in FIG. 5, the members with the same reference numerals as those in FIG. 2 are the same as the members described in FIG. 2 except for the points described below, and thus the description is omitted.

The focus ring 131 of the substrate mounting structure 130 'includes an upper ring member 131c and a lower ring member 131b. In the substrate mounting structure 130 ', the side surface 1312 of the upper ring member 131c is inclined so that the distance between the side surface 1312 and the side surface of the mounting table 150 becomes longer as it moves away from the lower ring member 131b. In the substrate mounting structure 130 ', the distance d6 between the uppermost end of the side surface 1312 of the upper ring member 131c and the side surface of the mounting table 150 is, for example, 1.5 mm.

After the process is performed using the substrate mounting structure 130 ', for example, as shown in FIG. 6, the deposition of the deposits 32 is observed in a range from the mounting surface 152a to the depth d7. FIG. 6 is an enlarged cross-sectional view showing an example of a range in which the side deposits 32 adhere to the mounting table 150. The distance d8 in the horizontal direction between the lower end of the range where the deposits 32 are attached and the side surface 1312 of the upper ring member 131c is 0.6 mm. In the range from the mounting surface 152a to the depth d7 or more, the deposit 32 is not observed.

From the results of FIG. 6, it is estimated that if the horizontal distance between the side surface of the mounting table 150 and the side surface 1312 of the upper ring member 131 c is 0.6 mm or more, the component 31 of the deposit will penetrate and diffuse. Therefore, in the substrate mounting structure 130 of the present embodiment shown in FIG. 2, if the distance between the side surface 1310 of the upper ring member 131 a and the side surface of the mounting table 150 is 0.6 mm or more, the component 31 of the deposit in the gap 30 Will spread. As a result, it is estimated that the lateral growth rate of the deposit adhered between the back surface of the substrate W and the mounting table 150 is reduced.

In addition, the larger the volume of the gap 30 is, the more the component 31 of the deposit in the gap 30 spreads more widely, and the growth rate of the deposit adhering between the substrate W and the mounting table 150 should decrease. However, if the distance d5 between the side surface of the mounting table 150 and the side surface 1310 of the upper ring member 131a is too long, the horizontal width of the gap between the lower surface of the substrate W and the upper surface of the upper ring member 131a becomes shorter. Thereby, the conduction of the gap between the lower surface of the substrate W and the upper surface of the upper ring member 131a becomes large, and the component 31 of the deposit generated in the processing chamber 104 passes through the gap and more easily reaches the side surface of the mounting table 150. . Therefore, if the distance between the side surface of the mounting table 150 and the side surface 1310 of the upper ring member 131 a is too long, the growth rate of the deposits attached to the side surface of the mounting table 150 increases.

For example, the distance d5 between the side surface of the mounting table 150 and the side surface 1310 of the upper ring member 131a is preferably a half or less of the length d1 of the end portion of the substrate W to be mounted, for example, 1.5 mm or less. Therefore, the distance d5 between the side surface of the mounting table 150 and the side surface 1310 of the upper ring member 131a is preferably 0.6 mm or more and 1.5 mm or less. In addition, in FIG. 2, the lower ring member 131 b also plays a role of protecting the supporting member 132 below the plasma. The distance between the side surface 1311 of the lower ring member 131b and the side surface of the mounting table 150 is preferably 0 mm, but it is necessary to consider the allowable size during assembly and manufacturing tolerances. Therefore, the distance between the side surface 1311 of the lower ring member 131b and the side surface of the mounting table 150 is preferably at least a minimum value of 0.1 mm or less.

In addition, in FIG. 2, the depth of the gap 30 between the side surface 1310 on the mounting table 150 side of the upper ring member 131 a and the side surface of the mounting table 150 is larger, and the deeper the volume of the gap 30 is larger. However, if the gap 30 is made too deep, the lower ring member 131b becomes thin, and the strength of the focus ring 131 decreases. Therefore, when the thickness d3 of the focus ring 131 is, for example, 10 mm, the depth of the gap 30 (that is, the thickness d4 of the upper ring member 131 a) is preferably in a range larger than 0 and 8 mm or less. The thickness d4 of the upper ring member 131a is, for example, a range larger than 5 mm and smaller than 8 mm. When the thickness d3 of the focus ring 131 is used as a reference, the thickness d4 of the upper ring member 131a is, for example, larger than 0 times and not more than 0.8 times d3.

The embodiment of the plasma processing apparatus 1 has been described above. According to the plasma processing apparatus 1 of the present embodiment, it is possible to reduce the deposit between the back surface of the substrate W and the mounting table 150.

[other]
In addition, the technology disclosed in this application is not limited to the above-mentioned embodiments, and various possible modifications can be made within the scope of the gist thereof.

For example, in the above embodiment, the side surface 1310 of the upper ring member 131a is formed in parallel with the side surface of the mounting table 150, but the disclosed technology is not limited to this. For example, as shown in FIG. 5, the substrate mounting structure 130 ′ and the side surface 1312 of the upper ring member 131 c are arranged so that the distance between the side surface 1312 and the side surface of the mounting table 150 becomes longer as they move away from the lower ring member 131 b. Tilt is also fine. In the substrate mounting structure 130 'shown in FIG. 5, the distance d6 between the uppermost end of the side surface 1312 of the upper ring member 131c and the side surface of the mounting table 150 is preferably 0.6 mm to 1.5 mm. In addition, in FIG. 5, the side surface 1312 of the upper ring member 131 c is inclined linearly in a cross-sectional view, but the side surface 1312 of the upper ring member 131 c may be inclined curvedly in a cross-sectional view.

Moreover, in the above-mentioned embodiment, although the apparatus which processed the substrate W, such as an FPD panel, with a plasma is described as an example, the disclosed technique is not limited to this, and the semiconductor substrates, such as a silicon wafer, are processed with a plasma. The processing apparatus may also apply the disclosed technology.

In addition, in the above-mentioned embodiment, a device that uses an inductively coupled plasma for etching as a plasma source is described as an example, but the disclosed technology is not limited to this. If it is a plasma etching device, the plasma source is not limited to inductively coupled plasma. For example, any plasma source such as capacitive coupling plasma, microwave plasma, magnetron plasma, etc. can be used.

G‧‧‧Gate valve

W‧‧‧ substrate

1‧‧‧ Plasma treatment device

10‧‧‧ Ontology

20‧‧‧Control device

101‧‧‧ chamber

102‧‧‧ Dielectric Wall

103‧‧‧ Antenna Room

103a‧‧‧ sidewall

104‧‧‧Processing Room

104a‧‧‧ sidewall

105‧‧‧Support Shed

106‧‧‧ opening

107‧‧‧ bulkhead

111‧‧‧ spray frame

112‧‧‧gas outlet

113‧‧‧antenna

113a‧‧‧antenna cable

114‧‧‧Integrator

115‧‧‧High-frequency power

116‧‧‧Power supply components

117‧‧‧ Spacer

118‧‧‧Terminal

119‧‧‧Power line

120‧‧‧Gas Supply Department

121‧‧‧Gas supply source

122‧‧‧Flow Controller

123‧‧‧Valve

124‧‧‧Gas supply pipe

130‧‧‧ substrate mounting structure

131‧‧‧Focus ring

131a‧‧‧upper ring member

131b‧‧‧lower ring member

131c‧‧‧upper ring member

1310‧‧‧ side

1311‧‧‧ side

1312‧‧‧ side

132‧‧‧ supporting components

133‧‧‧Protective member

140‧‧‧High-frequency power

141‧‧‧Integrator

150‧‧‧mounting table

151‧‧‧ abutment

151a‧‧‧flow

152‧‧‧Electro Chuck

152a‧‧‧mounting surface

153‧‧‧electrode

154‧‧‧supply hole

155‧‧‧DC Power

156‧‧‧Insulating members

157‧‧‧Piping

160‧‧‧ exhaust port

161‧‧‧Exhaust

30‧‧‧ clearance

31‧‧‧ ingredients

32‧‧‧ Accumulation

[Fig. 1] Fig. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment of the present disclosure.

[Fig. 2] Fig. 2 is an enlarged sectional view showing an example of a substrate mounting structure.

3 is a plan view showing an example of a positional relationship between a substrate, a mounting table, and a focus ring.

4 is an enlarged cross-sectional view showing a positional relationship between a substrate, a mounting table, and a focus ring of a comparative example.

[FIG. 5] FIG. 5 is an enlarged sectional view showing an example of a substrate mounting structure used in an experiment.

[FIG. 6] FIG. 6 is an enlarged cross-sectional view showing an example of a range in which a deposit is adhered to a side surface of a mounting table.

Claims (9)

A substrate mounting structure includes a mounting table on which a substrate is mounted on an upper mounting surface; A ring member surrounding the mounting surface and disposed at a position lower than the mounting surface; A support member arranged on the lower side of the ring member and supporting the ring member; The aforementioned ring member has: A lower ring member constituting the aforementioned ring member and covering the lower ring member of the supporting member; The distance between at least a part of the side of the mounting table and the side of the mounting table constituting the upper part of the ring member is longer than the distance between the side of the mounting table and the side of the mounting table of the lower ring member. Long upper ring member. The substrate mounting structure according to claim 1, wherein the portion on the mounting table side of the upper ring member and the lower ring member, Form at least 1 segment difference. The substrate mounting structure according to claim 2, wherein the side surface on the mounting table side of the upper ring member, It is formed in parallel with the side surface of the said mounting base. The substrate mounting structure according to claim 2 or 3, wherein a distance between the side surface of the mounting table side of the upper ring member and the side surface of the mounting table is 0.6 mm or more and 1.5 mm or less. The substrate mounting structure according to claim 1, wherein the side surface on the mounting table side of the upper ring member, As the distance from the lower ring member increases, the distance between the side surface of the mounting table side of the upper ring member and the side surface of the mounting table becomes longer. The substrate mounting structure according to claim 5, wherein a distance between an uppermost end of a side surface of the mounting table side of the upper ring member and a side surface of the mounting table is 0.6 mm or more and 1.5 mm or less. The substrate mounting structure according to any one of claims 1 to 6, wherein the thickness of the upper ring member is greater than 0 mm and 8 mm or less. The substrate mounting structure according to any one of claims 1 to 7, wherein the mounting table includes: An electrode provided inside the mounting table and used to adsorb and hold the substrate placed on the mounting surface by electrostatic force; A supply hole for supplying a cooling gas to the mounting surface. A plasma processing device comprising: a chamber; A substrate mounting structure disposed in the aforementioned chamber and on which the substrate is mounted; A gas supply unit for supplying a processing gas into the chamber; A plasma generating section for generating a plasma of the processing gas; The substrate mounting structure includes: A mounting table for mounting the substrate on an upper mounting surface; A ring member surrounding the mounting surface and disposed at a position lower than the mounting surface; A support member arranged on the lower side of the ring member and supporting the ring member; The aforementioned ring member has: A lower ring member constituting the aforementioned ring member and covering the lower ring member of the supporting member; The distance between at least a part of the side of the mounting table and the side of the mounting table constituting the upper part of the ring member is longer than the distance between the side of the mounting table and the side of the mounting table of the lower ring member. Long upper ring member.