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TW201938732A - Adhesive tape for semiconductor protection which is capable of appropriately filling an uneven surface and has a small amount of solvent - Google Patents

Adhesive tape for semiconductor protection which is capable of appropriately filling an uneven surface and has a small amount of solvent Download PDF

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Publication number
TW201938732A
TW201938732A TW108107548A TW108107548A TW201938732A TW 201938732 A TW201938732 A TW 201938732A TW 108107548 A TW108107548 A TW 108107548A TW 108107548 A TW108107548 A TW 108107548A TW 201938732 A TW201938732 A TW 201938732A
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Prior art keywords
meth
adhesive tape
acrylate
adhesive
intermediate layer
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TW108107548A
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Chinese (zh)
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TWI809049B (en
Inventor
佐佐木貴俊
秋山淳
東別府優樹
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日商日東電工股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062Copolymers with monomers not covered by C09J133/06
    • C09J133/066Copolymers with monomers not covered by C09J133/06 containing -OH groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • C09J7/25Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/255Polyesters
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/50Adhesives in the form of films or foils characterised by a primer layer between the carrier and the adhesive
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00Presence of (meth)acrylic polymer
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2451/00Presence of graft polymer
    • C09J2451/003Presence of graft polymer in the primer coating
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2467/00Presence of polyester
    • C09J2467/006Presence of polyester in the substrate

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention provides an adhesive tape for semiconductor protection, which is capable of appropriately filling an uneven surface and has a small amount of solvent. The adhesive tape for semiconductor protection of the present invention includes: a substrate; an adhesive layer disposed on at least one side of the substrate; and an intermediate layer disposed between the substrate and the adhesive layer. The adhesive layer includes an active energy ray-curable adhesive containing a (meth) acrylic polymer. The thickness of the adhesive layer is 1 [mu]m to 50 [mu]m. The intermediate layer includes a UV-polymerized (meth) acrylic polymer. The thickness of the intermediate layer is 50 [mu]m to 1000 [mu]m. Moreover, the substrate includes thermal plastic resin.

Description

半導體保護用黏著帶Adhesive tape for semiconductor protection

本發明係關於一種半導體保護用黏著帶。The invention relates to an adhesive tape for semiconductor protection.

先前,於加工半導體晶圓時,於將半導體晶圓之背面研削至期望厚度為止之背面磨削步驟中,為了固定半導體晶圓或者保護與研削面相反側之面而使用黏著帶(背面磨削帶)(例如專利文獻1)。通常,背面磨削帶包括基材及黏著劑層。此種背面磨削帶將黏著劑層側貼附於半導體晶圓之表面(與晶圓之研削面相反側之面)而使用,於研削半導體晶圓之背面後被剝離。Previously, when processing a semiconductor wafer, in the back grinding step of grinding the back of the semiconductor wafer to a desired thickness, an adhesive tape (back grinding) was used to secure the semiconductor wafer or protect the surface opposite to the grinding surface. Tape) (for example, Patent Document 1). Generally, the back-grinding tape includes a substrate and an adhesive layer. This type of back-grinding tape is used by attaching the adhesive layer side to the surface of the semiconductor wafer (the surface opposite to the grinding surface of the wafer) and peeling off after grinding the back surface of the semiconductor wafer.

作為上述半導體晶圓,已知於其表面具備作為電極之凸塊之半導體晶圓。對於用於此種半導體晶圓之背面磨削帶,於具有適度之剛性並能夠防止背面磨削步驟之晶圓裂紋、實現厚度精度良好之背面研削之先前要求之基礎上,亦要求能夠良好地覆蓋凸塊面而防止背面研削時之水分侵入。作為填埋由凸塊所致之凹凸、良好地覆蓋凸塊面之方法,可列舉增加黏著劑層之厚度之方法。然而,若加厚先前構成之背面磨削帶之黏著劑層,則黏著劑層中之殘留溶劑之影響變大,於處理背面磨削帶之作業者之健康方面產生問題。
[先前技術文獻]
[專利文獻]
As such a semiconductor wafer, a semiconductor wafer having bumps as electrodes on its surface is known. For the backside grinding tape used for such semiconductor wafers, it is also required to be able to perform well on the basis of the previous requirements for wafers that have moderate rigidity and can prevent the backside grinding step from cracking, and achieve backside grinding with good thickness accuracy. Covers the bump surface to prevent moisture intrusion during back grinding. As a method of filling the unevenness caused by the bumps and covering the bump surface well, a method of increasing the thickness of the adhesive layer can be mentioned. However, if the adhesive layer of the back grinding belt previously formed is thickened, the influence of the residual solvent in the adhesive layer becomes large, which causes problems in the health of the operator who handles the back grinding belt.
[Prior technical literature]
[Patent Literature]

[專利文獻1]日本專利特開2011-151163號公報[Patent Document 1] Japanese Patent Laid-Open No. 2011-151163

[發明所欲解決之問題][Problems to be solved by the invention]

本發明之課題在於,提供一種能夠良好地填埋凹凸面且溶劑含量較少之半導體保護用黏著帶。
[解決問題之技術手段]
An object of the present invention is to provide an adhesive tape for semiconductor protection capable of satisfactorily burying uneven surfaces and having a small solvent content.
[Technical means to solve the problem]

本發明之半導體保護用黏著帶具備:基材、配置於該基材之至少單側之黏著劑層、以及配置於該基材與該黏著劑層之間之中間層,該黏著劑層包括包含(甲基)丙烯酸系聚合物之活性能量線硬化型黏著劑,該黏著劑層之厚度為1 μm~50 μm,該中間層包含UV聚合(甲基)丙烯酸系聚合物,該中間層之厚度為50 μm~1000 μm。
一個實施形態中,上述半導體保護用黏著帶於150℃之空氣中放置1小時之時,源自勞動安全衛生法之有機溶劑預防規則之第1種有機溶劑、第2種有機溶劑或第3種有機溶劑之釋氣總量為25 ppm以下。
一個實施形態中,利用熱機械分析(TMA)並將壓入深度設為上述黏著劑層之20%、將直徑0.5 mm之探針壓入該黏著劑層而測定負荷值時,由測定開始起1秒後~300秒後之負荷之變化量(μN/(mm2 ・秒))為1900(μN/(mm2 ・秒))以下。
一個實施形態中,上述基材包含熱塑性樹脂。
一個實施形態中,上述基材包含聚酯系樹脂。
[發明之效果]
The adhesive tape for semiconductor protection of the present invention includes a substrate, an adhesive layer disposed on at least one side of the substrate, and an intermediate layer disposed between the substrate and the adhesive layer. The adhesive layer includes: (Meth) acrylic polymer active energy ray hardening type adhesive, the thickness of the adhesive layer is 1 μm to 50 μm, the intermediate layer contains UV polymerized (meth) acrylic polymer, and the thickness of the intermediate layer It is 50 μm to 1000 μm.
In one embodiment, when the adhesive tape for semiconductor protection is left in air at 150 ° C for 1 hour, the first organic solvent, the second organic solvent, or the third organic solvent derived from the organic solvent prevention rule of the Labor Safety and Health Law. The total outgassing of organic solvents is below 25 ppm.
In one embodiment, when the load value is measured by thermomechanical analysis (TMA) and the penetration depth is set to 20% of the adhesive layer, and a 0.5 mm diameter probe is pressed into the adhesive layer, the measurement is started from the measurement start. The amount of change in load (μN / (mm 2 · second)) after 1 second to 300 seconds is 1900 (μN / (mm 2 · second)) or less.
In one embodiment, the substrate includes a thermoplastic resin.
In one embodiment, the substrate includes a polyester resin.
[Effect of the invention]

根據本發明,可提供一種能夠良好地填埋凹凸面且溶劑含量較少之半導體保護用黏著帶。According to the present invention, it is possible to provide an adhesive tape for semiconductor protection capable of satisfactorily burying uneven surfaces and having a small solvent content.

A. 半導體保護用黏著帶之概要
圖1係本發明之一個實施形態之半導體保護用黏著帶之概略剖視圖。該實施形態之半導體保護用黏著帶100具備:基材10、配置於基材10之至少單側之黏著劑層30、以及配置於基材10與黏著劑層30之間之中間層20。雖未圖示,但本發明之半導體保護用黏著帶可以保護黏著面之目的而在至使用為止之期間於黏著劑層之外側設置剝離襯墊。
A. Overview of an adhesive tape for semiconductor protection <br/> FIG. 1 is a schematic cross-sectional view of an adhesive tape for semiconductor protection according to an embodiment of the present invention. The semiconductor protection adhesive tape 100 according to this embodiment includes a substrate 10, an adhesive layer 30 disposed on at least one side of the substrate 10, and an intermediate layer 20 disposed between the substrate 10 and the adhesive layer 30. Although not shown, the adhesive tape for semiconductor protection of the present invention can protect the adhesive surface, and a release liner is provided on the outer side of the adhesive layer during the period until use.

本發明之半導體保護用黏著帶所具備之該中間層包含UV聚合(甲基)丙烯酸系聚合物。本說明書中,「UV聚合(甲基)丙烯酸系聚合物」係指:藉由紫外線照射將包含(甲基)丙烯酸系單體及光聚合起始劑且不使用溶劑之單體組合物進行聚合而獲得之聚合物。本發明之半導體保護用黏著帶中,藉由具備作為富有柔軟性之層之黏著劑層及中間層,能夠良好地填埋凹凸面,另一方面,藉由使富有柔軟性之層之一部分為包含UV聚合(甲基)丙烯酸系聚合物之中間層,從而具有溶劑含量較少、釋氣較少之優點。進而,藉由製成包含UV聚合(甲基)丙烯酸系聚合物之中間層,能夠以單層形成具有厚度之中間層(即,無需藉由溶液塗覆而形成厚層時進行之反覆塗佈)。其結果,能夠獲得翹曲非常小之半導體保護用黏著帶。The intermediate layer included in the adhesive tape for semiconductor protection of the present invention contains a UV polymerized (meth) acrylic polymer. In the present specification, "UV polymerized (meth) acrylic polymer" means that a monomer composition containing a (meth) acrylic monomer and a photopolymerization initiator without using a solvent is polymerized by irradiation with ultraviolet rays. And the polymer obtained. In the adhesive tape for semiconductor protection of the present invention, an uneven layer can be well buried by having an adhesive layer and an intermediate layer as layers having flexibility, and on the other hand, a portion of the layer having flexibility is The intermediate layer containing a UV polymerized (meth) acrylic polymer has the advantages of less solvent content and less outgassing. Furthermore, by making the intermediate layer containing a UV polymerized (meth) acrylic polymer, it is possible to form the intermediate layer having a thickness in a single layer (that is, it is not necessary to perform overcoating when a thick layer is formed by solution coating). ). As a result, an adhesive tape for semiconductor protection with very little warpage can be obtained.

本發明之半導體保護用黏著帶於150℃之空氣中放置1小時之時,源自勞動安全衛生法之有機溶劑預防規則之第1種有機溶劑、第2種有機溶劑或第3種有機溶劑之釋氣總量較佳為25 ppm以下。如上所述,藉由包含包括UV聚合(甲基)丙烯酸系聚合物之中間層,能夠獲得如此釋氣量較少之黏著帶。上述釋氣總量較佳為20 ppm以下,更佳為15 ppm以下。上述釋氣總量越少越佳,其下限例如為0.5 ppm(較佳為0.1 ppm、更佳為0 ppm)。When the adhesive tape for semiconductor protection of the present invention is left in the air at 150 ° C for 1 hour, the first organic solvent, the second organic solvent, or the third organic solvent derived from the organic solvent prevention rule of the Labor Safety and Health Law. The total amount of outgassing is preferably 25 ppm or less. As described above, by including an intermediate layer including a UV polymerized (meth) acrylic polymer, it is possible to obtain such an adhesive tape having a small outgassing amount. The total amount of outgassing is preferably 20 ppm or less, and more preferably 15 ppm or less. The lower the total amount of outgassing, the better, and the lower limit is, for example, 0.5 ppm (preferably 0.1 ppm, more preferably 0 ppm).

作為上述第1種有機溶劑之具體例,可列舉:氯仿、四氯化碳、1,2-二氯乙烷、1,2-二氯乙烯、1,1,2,2-四氯乙烷、三氯乙烷、二硫化碳等。作為上述第2種有機溶劑之具體例,可列舉:丙酮、異丁醇、異丙醇、異戊醇、乙醇、乙二醇單乙醚、乙二醇單乙醚乙酸酯、乙二醇單正丁醚、乙二醇單甲醚、鄰二氯苯、二甲苯、甲酚、氯苯、乙酸異丁酯、乙酸異丙酯、乙酸異戊酯、乙酸乙酯、乙酸正丁酯、乙酸正丙酯、乙酸正戊酯、乙酸甲酯、環己醇、環己酮、1,4-二噁烷、二氯甲烷、N,N-二甲基甲醯胺、苯乙烯、四氯乙烯、四氫呋喃、1,1,1-三氯乙烷、甲苯、正己烷、1-丁醇、2-丁醇、甲醇、甲基異丁酮、甲基乙基酮、甲基環己醇、甲基環己酮、甲基正丁酮等。作為上述第3種有機溶劑之具體例,可列舉:汽油、煤焦油石腦油(包含溶劑石腦油)、石油醚、石油石腦油、石油揮發油、松節油、礦油精等。一個實施形態中,半導體保護用黏著帶於150℃之空氣中放置1小時之時,源自乙酸乙酯之釋氣量與源自甲苯之釋氣量之合計量為上述範圍(即,25 ppm以下、較佳為20 ppm以下、更佳為15 ppm以下)。Specific examples of the first organic solvent include chloroform, carbon tetrachloride, 1,2-dichloroethane, 1,2-dichloroethylene, and 1,1,2,2-tetrachloroethane. , Trichloroethane, carbon disulfide, etc. Specific examples of the second organic solvent include acetone, isobutanol, isopropanol, isoamyl alcohol, ethanol, ethylene glycol monoethyl ether, ethylene glycol monoethyl ether acetate, and ethylene glycol mono-n-butyl alcohol. Butyl ether, ethylene glycol monomethyl ether, o-dichlorobenzene, xylene, cresol, chlorobenzene, isobutyl acetate, isopropyl acetate, isoamyl acetate, ethyl acetate, n-butyl acetate, n-acetate Propyl ester, n-pentyl acetate, methyl acetate, cyclohexanol, cyclohexanone, 1,4-dioxane, dichloromethane, N, N-dimethylformamide, styrene, tetrachloroethylene, Tetrahydrofuran, 1,1,1-trichloroethane, toluene, n-hexane, 1-butanol, 2-butanol, methanol, methyl isobutyl ketone, methyl ethyl ketone, methyl cyclohexanol, methyl Cyclohexanone, methyl-n-butanone, and the like. Specific examples of the third organic solvent include gasoline, coal tar naphtha (including solvent naphtha), petroleum ether, petroleum naphtha, petroleum volatile oil, turpentine, and mineral spirits. In one embodiment, when the adhesive tape for semiconductor protection is left in the air at 150 ° C for 1 hour, the total amount of the amount of gas released from ethyl acetate and the amount of gas released from toluene is within the above range (that is, 25 ppm or less, It is preferably 20 ppm or less, and more preferably 15 ppm or less).

將本發明之半導體保護用黏著帶貼合於不鏽鋼板時之23℃下之初始黏著力較佳為0.4 N/20 mm以上,更佳為0.5 N/20 mm以上。將半導體保護用黏著帶貼合於不鏽鋼板時之23℃下之初始黏著力之上限例如為35 N/20 mm。再者,黏著力按照JIS Z 0237:2000進行測定。具體而言,藉由使2 kg之輥來回1次而將半導體保護用黏著帶貼合於不鏽鋼板(算術平均表面粗糙度Ra:50±25 nm),於23℃下放置30分鐘後,於剝離角度為 180°、剝離速度(拉伸速度)為300 mm/分鐘之條件下剝離半導體保護用黏著帶而進行測定。再者,如後所述,本發明之半導體保護用黏著帶所具備之黏著劑層包含活性能量線硬化型黏著劑,其黏著力能夠藉由活性能量線照射而發生變化,於本說明書中,「初始黏著力」係指活性能量線照射前之黏著力。The initial adhesive force at 23 ° C when the adhesive tape for semiconductor protection of the present invention is bonded to a stainless steel plate is preferably 0.4 N / 20 mm or more, and more preferably 0.5 N / 20 mm or more. When the adhesive tape for semiconductor protection is bonded to a stainless steel plate, the upper limit of the initial adhesive force at 23 ° C. is, for example, 35 N / 20 mm. The adhesive force was measured in accordance with JIS Z 0237: 2000. Specifically, an adhesive tape for semiconductor protection was bonded to a stainless steel plate (arithmetic average surface roughness Ra: 50 ± 25 nm) by turning a 2 kg roller back and forth once, and then left at 23 ° C for 30 minutes, and then The peeling angle was 180 °, and the peeling speed (tensile speed) was 300 mm / minute, and the adhesive tape for semiconductor protection was peeled and measured. In addition, as described later, the adhesive layer included in the adhesive tape for semiconductor protection of the present invention contains an active energy ray-curable adhesive, and its adhesive force can be changed by irradiation with active energy rays. In this specification, "Initial adhesion" refers to the adhesion before the irradiation of active energy rays.

一個實施形態中,本發明之半導體保護用黏著帶之黏著力能夠藉由活性能量線照射而發生變化。將半導體保護用黏著帶貼合於不鏽鋼板並照射累積光量為500 mJ/cm2 ~1500 mJ/cm2 (較佳為1000 mJ/cm2 )之紫外線(使用以波長365 nm為中心之高壓水銀燈)後之23℃下之黏著力較佳為0.07 N/20 mm~0.5 N/20 mm,更佳為0.08 N/20 mm~0.3 N/20 mm。若為此種範圍內,則能夠獲得特定步驟(例如背面磨削步驟)後之剝離性優異之半導體保護用黏著帶。In one embodiment, the adhesive force of the adhesive tape for semiconductor protection of the present invention can be changed by irradiation with active energy rays. Adhere the adhesive tape for semiconductor protection to a stainless steel plate and irradiate ultraviolet rays with a cumulative light amount of 500 mJ / cm 2 to 1500 mJ / cm 2 (preferably 1000 mJ / cm 2 ) (using a high-pressure mercury lamp with a wavelength of 365 nm as the center) The adhesive force at 23 ° C is preferably 0.07 N / 20 mm to 0.5 N / 20 mm, and more preferably 0.08 N / 20 mm to 0.3 N / 20 mm. Within this range, an adhesive tape for semiconductor protection having excellent peelability after a specific step (for example, a back grinding step) can be obtained.

半導體保護用黏著帶之厚度較佳為10 μm~700 μm,更佳為50 μm~600 μm,進而較佳為100 μm~500 μm。The thickness of the adhesive tape for semiconductor protection is preferably 10 μm to 700 μm, more preferably 50 μm to 600 μm, and even more preferably 100 μm to 500 μm.

B. 中間層
如上所述,中間層包含UV聚合(甲基)丙烯酸系聚合物。代表性而言,UV聚合(甲基)丙烯酸系聚合物包含源自(甲基)丙烯酸烷基酯之結構單元。
B. Intermediate layer As described above, the intermediate layer contains a UV polymerized (meth) acrylic polymer. Typically, a UV-polymerized (meth) acrylic polymer includes a structural unit derived from an alkyl (meth) acrylate.

一個實施形態中,中間層藉由對包含1種或2種以上(甲基)丙烯酸烷基酯之中間層形成用組合物進行UV照射而形成。該中間層形成用組合物不含溶劑。In one embodiment, the intermediate layer is formed by UV-irradiating the intermediate layer-forming composition containing one or two or more (meth) acrylic acid alkyl esters. The composition for forming an intermediate layer does not contain a solvent.

作為上述(甲基)丙烯酸烷基酯之具體例,可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸基酯、(甲基)丙烯酸異癸基酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等(甲基)丙烯酸C1-20烷基酯。Specific examples of the (meth) acrylic acid alkyl ester include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, N-butyl (meth) acrylate, isobutyl (meth) acrylate, second butyl (meth) acrylate, amyl (meth) acrylate, isoamyl (meth) acrylate, (meth) acrylic acid Hexyl ester, heptyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, octyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, (formyl) (Isyl) isononyl acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, (formyl) Tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, cetyl (meth) acrylate, heptadecyl (meth) acrylate C1-20 alkyl (meth) acrylates, such as octadecyl (meth) acrylate, undecyl (meth) acrylate, eicosyl (meth) acrylate, and the like.

上述UV聚合(甲基)丙烯酸系聚合物中,以凝聚力、耐熱性、交聯性等改性之目的,根據需要亦可包含與能夠同上述(甲基)丙烯酸烷基酯共聚之其他單體相對應之結構單元。作為此種單體,例如可列舉丙烯酸、甲基丙烯酸等含羧基單體;馬來酸酐、衣康酸酐等酸酐單體;(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯等含羥基單體;苯乙烯磺酸、烯丙基磺酸等含磺酸基單體;(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、丙烯醯基嗎啉等含氮單體;(甲基)丙烯酸胺基乙酯等(甲基)丙烯酸胺基烷基酯系單體;(甲基)丙烯酸甲氧基乙酯等(甲基)丙烯酸烷氧基烷基酯系單體;N-環己基馬來醯亞胺、N-異丙基馬來醯亞胺等馬來醯亞胺系單體;N-甲基衣康醯亞胺、N-乙基衣康醯亞胺等衣康醯亞胺系單體;琥珀醯亞胺系單體;乙酸乙烯酯、丙酸乙烯酯、N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮等乙烯基系單體;丙烯腈、甲基丙烯腈等氰基丙烯酸酯單體;(甲基)丙烯酸縮水甘油酯等含環氧基之丙烯酸系單體;(甲基)丙烯酸聚乙二醇酯、(甲基)丙烯酸聚丙二醇酯等二醇系丙烯酸酯單體;(甲基)丙烯酸四氫糠酯、氟代(甲基)丙烯酸酯、有機矽(甲基)丙烯酸酯等具有雜環、鹵素原子、矽原子等之丙烯酸酯系單體;異戊二烯、丁二烯、異丁烯等烯烴系單體;乙烯基醚等乙烯基醚系單體等。該等單體成分可單獨使用或者組合使用2種以上。源自上述其他單體之結構單元之含有比例於丙烯酸系聚合物100重量份中,較佳為1重量份~30重量份,更佳為3重量份~25重量份。The aforementioned UV-polymerized (meth) acrylic polymer may contain other monomers capable of copolymerizing with the above-mentioned (meth) acrylic acid alkyl ester for the purpose of modification such as cohesion, heat resistance, and crosslinkability. Corresponding structural unit. Examples of such monomers include carboxyl-containing monomers such as acrylic acid and methacrylic acid; acid anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyethyl (meth) acrylate and hydroxypropyl (meth) acrylate. Hydroxyl-containing monomers; sulfonic acid group-containing monomers such as styrene sulfonic acid, allyl sulfonic acid; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, acrylamide Nitrogen-containing monomers such as phospholine; aminoalkyl (meth) acrylate monomers such as amino (meth) acrylate; alkoxy (meth) acrylates such as methoxyethyl (meth) acrylate Alkyl ester-based monomers; N-cyclohexylmaleimide, N-isopropylmaleimide, and other maleimide-based monomers; N-methylitaconimine, N-ethyl Itaconimine-based monomers such as kimonoconimide; succinimine-based imine monomers; vinyl monomers such as vinyl acetate, vinyl propionate, N-vinylpyrrolidone, methylvinylpyrrolidone ; Cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; epoxy-containing acrylic monomers such as glycidyl (meth) acrylate; polyethylene glycol (meth) acrylate, (meth) C Glycol acrylate monomers such as polypropylene glycol esters; tetrahydrofurfuryl (meth) acrylate, fluoro (meth) acrylate, silicone (meth) acrylate, etc. have heterocycles, halogen atoms, and silicon atoms Acrylic monomers such as olefin; olefin monomers such as isoprene, butadiene, isobutylene; vinyl ether monomers such as vinyl ether. These monomer components can be used individually or in combination of 2 or more types. The content ratio of the structural unit derived from the other monomer is 100 parts by weight of the acrylic polymer, preferably 1 to 30 parts by weight, and more preferably 3 to 25 parts by weight.

上述中間層形成用組合物可包含活性能量線反應性化合物(單體或低聚物)。作為活性能量線反應性化合物,可列舉例如具有丙烯醯基、甲基丙烯醯基、乙烯基、烯丙基、乙炔基等含有聚合性碳-碳多鍵之官能基之光反應性單體或低聚物。若使用具有2個以上官能基之多官能丙烯酸酯般之多官能單體,則藉由與上述(甲基)丙烯酸烷基酯之鍵結而能夠獲得高分子量之UV聚合(甲基)丙烯酸系聚合物。作為該光反應性單體之具體例,可列舉:三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯等(甲基)丙烯酸與多元醇之酯化物;多官能胺基甲酸酯(甲基)丙烯酸酯;環氧(甲基)丙烯酸酯;低聚酯(甲基)丙烯酸酯等。此外,亦可使用甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯(2-異氰酸基乙基甲基丙烯酸酯)、間異丙烯基-α,α-二甲基苄基異氰酸酯等單體。作為光反應性低聚物之具體例,可列舉上述單體之二聚物~五聚物等。The composition for forming an intermediate layer may contain an active energy ray-reactive compound (monomer or oligomer). Examples of the active energy ray-reactive compound include a photoreactive monomer having a functional group containing a polymerizable carbon-carbon multiple bond such as an acryl group, a methacryl group, a vinyl group, an allyl group, or an ethynyl group, or Oligomer. If a polyfunctional monomer such as a polyfunctional acrylate having two or more functional groups is used, a high-molecular-weight UV-polymerized (meth) acrylic acid can be obtained by bonding with the alkyl (meth) acrylate. polymer. Specific examples of the photoreactive monomer include trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexane Esters of (meth) acrylic acid and polyols such as glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, etc .; polyfunctional urethane (meth) acrylate; epoxy (Meth) acrylate; oligoester (meth) acrylate and the like. In addition, methacrylfluorenyl isocyanate, 2-methacryloxyethyl isocyanate (2-isocyanatoethyl methacrylate), m-isopropenyl-α, α-dimethyl Monomers such as benzyl isocyanate. Specific examples of the photoreactive oligomer include dimers to pentamers of the monomers, and the like.

此外,作為上述活性能量線反應性化合物,可使用環氧化丁二烯、甲基丙烯酸縮水甘油酯、丙烯醯胺、乙烯基矽氧烷等單體;或者包含該單體之低聚物。In addition, as the active energy ray-reactive compound, a monomer such as epoxidized butadiene, glycidyl methacrylate, acrylamide, and vinyl siloxane; or an oligomer containing the monomer can be used.

進而,作為上述活性能量線反應性化合物,可使用鎓鹽等有機鹽類與分子內具有多個雜環之化合物之混合物。該混合物藉由活性能量線(例如紫外線、電子束)之照射而使有機鹽裂解生成離子,其成為起始種而引發雜環之開環反應,從而能夠形成三維網絡結構。作為上述有機鹽類,例如可列舉碘鎓鹽、鏻鹽、銻鹽、鋶鹽、硼酸鹽等。作為上述分子內具有多個雜環之化合物中之雜環,可列舉環氧乙烷、氧雜環丁烷、氧雜環戊烷、環硫乙烷、氮丙啶等。Further, as the active energy ray-reactive compound, a mixture of an organic salt such as an onium salt and a compound having a plurality of heterocycles in the molecule can be used. The mixture is irradiated with active energy rays (such as ultraviolet rays and electron beams) to decompose the organic salt to generate ions, which becomes the starting species and initiates a ring-opening reaction of the heterocyclic ring, thereby forming a three-dimensional network structure. Examples of the organic salts include iodonium salts, sulfonium salts, antimony salts, sulfonium salts, and borate salts. Examples of the heterocyclic ring in the compound having a plurality of heterocyclic rings in the molecule include ethylene oxide, oxetane, oxetane, episulfide, and aziridine.

於上述中間層形成用組合物包含活性能量線反應性化合物之情形時,活性能量線反應性化合物之含有比例相對於基礎聚合物100重量份較佳為0.1重量份~100重量份,更佳為0.1重量份~50重量份,進而較佳為0.1重量份~10重量份。When the composition for forming an intermediate layer contains an active energy ray reactive compound, the content ratio of the active energy ray reactive compound is preferably from 0.1 to 100 parts by weight, more preferably from 100 parts by weight of the base polymer. 0.1 to 50 parts by weight, and more preferably 0.1 to 10 parts by weight.

上述中間層形成用組合物可包含光聚合起始劑。作為光聚合起始劑,可使用任意適當之光聚合起始劑。例如可列舉BASF公司製之商品名「Irgacure184」、「Irgacure651」、「Irgacure369」、「Irgacure379ex」、「Irgacure819」、「Irgacure OXE2」、「Irgacure127」;Lamberti公司製造之商品名「ESACURE one」、「ESACURE 1001m」;旭電化工業公司製造之商品名「ADEKA OPTOMER N-1414」、「ADEKA OPTOMER N-1606」、「ADEKA OPTOMER N-1717」等。光聚合起始劑之含有比例相對於中間層形成用組合物中之聚合物構成成分100重量份,較佳為0.1重量份~20重量份,更佳為2重量份~10重量份。The composition for forming an intermediate layer may contain a photopolymerization initiator. As the photopolymerization initiator, any appropriate photopolymerization initiator can be used. For example, the product names "Irgacure184", "Irgacure651", "Irgacure369", "Irgacure379ex", "Irgacure819", "Irgacure OXE2", "Irgacure127") made by BASF, and "ESACURE one", "ESACURE one", "Products" "ESACURE 1001m"; trade names "ADEKA OPTOMER N-1414", "ADEKA OPTOMER N-1606", "ADEKA OPTOMER N-1717", etc. manufactured by Asahi Denka Kogyo. The content ratio of the photopolymerization initiator is preferably 0.1 to 20 parts by weight, and more preferably 2 to 10 parts by weight based on 100 parts by weight of the polymer constituents in the composition for forming an intermediate layer.

一個實施形態中,上述中間層形成用組合物包含交聯劑。作為交聯劑,例如可列舉異氰酸酯系交聯劑、環氧系交聯劑、噁唑啉系交聯劑、氮丙啶系交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑、脲系交聯劑、金屬醇鹽系交聯劑、金屬螯合物系交聯劑、金屬鹽系交聯劑、碳二亞胺系交聯劑、胺系交聯劑等。In one embodiment, the composition for forming an intermediate layer contains a crosslinking agent. Examples of the crosslinking agent include an isocyanate-based crosslinking agent, an epoxy-based crosslinking agent, an oxazoline-based crosslinking agent, an aziridine-based crosslinking agent, a melamine-based crosslinking agent, and a peroxide-based crosslinking agent. , Urea-based crosslinking agent, metal alkoxide-based crosslinking agent, metal chelate-based crosslinking agent, metal salt-based crosslinking agent, carbodiimide-based crosslinking agent, amine-based crosslinking agent, and the like.

於中間層形成用組合物包含交聯劑之情形時,該交聯劑之含有比例相對於中間層形成用組合物中之聚合物構成成分100重量份,較佳為0.5重量份~10重量份,更佳為1重量份~8重量份。若為此種範圍,則能夠形成適當調整彈性模數之黏著劑層。When the composition for intermediate layer formation contains a crosslinking agent, the content ratio of the crosslinking agent is 100 parts by weight, preferably 0.5 to 10 parts by weight, relative to 100 parts by weight of the polymer constituents in the composition for forming the intermediate layer. , More preferably 1 to 8 parts by weight. Within such a range, an adhesive layer can be formed in which the elastic modulus is appropriately adjusted.

中間層形成用組合物可根據需要進而包含任意適當之添加劑。作為添加劑,例如可列舉活性能量線聚合促進劑、自由基捕獲劑、增黏劑、塑化劑(例如偏苯三酸酯系塑化劑、均苯四酸酯系塑化劑等)、顏料、染料、填充劑、防老劑、導電材料、抗靜電劑、紫外線吸收劑、光穩定劑、剝離調整劑、軟化劑、界面活性劑、阻燃劑、抗氧化劑等。中間層形成用組合物不含溶劑。The composition for forming an intermediate layer may further contain any appropriate additive as needed. Examples of the additive include an active energy ray polymerization accelerator, a radical trapping agent, a tackifier, a plasticizer (such as a trimellitate-based plasticizer, a pyromellitic-based plasticizer, etc.), and a pigment , Dyes, fillers, antioxidants, conductive materials, antistatic agents, ultraviolet absorbers, light stabilizers, peel modifiers, softeners, surfactants, flame retardants, antioxidants, etc. The composition for forming an intermediate layer does not contain a solvent.

上述UV聚合(甲基)丙烯酸系聚合物之重量平均分子量較佳為30萬~1500萬,更佳為50萬~150萬。重量平均分子量可藉由GPC(溶劑:THF)進行測定。The weight average molecular weight of the UV polymerized (meth) acrylic polymer is preferably 300,000 to 15 million, and more preferably 500,000 to 1.5 million. The weight average molecular weight can be measured by GPC (solvent: THF).

上述UV聚合(甲基)丙烯酸系聚合物之玻璃轉移溫度較佳為-50℃~30℃,更佳為-40℃~20℃。若為此種範圍,則能夠獲得耐熱性優異、可適用於加熱步驟之黏著片。The glass transition temperature of the UV polymerized (meth) acrylic polymer is preferably -50 ° C to 30 ° C, and more preferably -40 ° C to 20 ° C. If it is this range, the adhesive sheet which is excellent in heat resistance and can be used suitably for a heating process can be obtained.

中間層之厚度為50 μm~1000 μm。藉由形成具有此種厚度之中間層,能夠獲得可良好地填埋凹凸面之半導體保護用黏著帶。中間層之厚度較佳為100 μm~900 μm,更佳為150 μm~800 μm,進而較佳為200 μm~700 μm,特別較佳為250 μm~600 μm。The thickness of the intermediate layer is 50 μm to 1000 μm. By forming the intermediate layer having such a thickness, an adhesive tape for semiconductor protection capable of satisfactorily filling the uneven surface can be obtained. The thickness of the intermediate layer is preferably 100 μm to 900 μm, more preferably 150 μm to 800 μm, still more preferably 200 μm to 700 μm, and particularly preferably 250 μm to 600 μm.

中間層之彈性模數較佳為0.07 MPa~0.70 MPa,更佳為0.075 MPa~0.60 MPa,進而較佳為0.08 MPa~0.50 MPa。若為此種範圍,則能夠獲得可良好地填埋凹凸面之半導體保護用黏著帶。The elastic modulus of the intermediate layer is preferably 0.07 MPa to 0.70 MPa, more preferably 0.075 MPa to 0.60 MPa, and even more preferably 0.08 MPa to 0.50 MPa. If it is this range, the adhesive tape for semiconductor protection which can bury the uneven surface favorably can be obtained.

本說明書中,彈性模數係指:於室溫下(23℃)藉由奈米壓痕法測得之彈性模數。藉由奈米壓痕法測得之彈性模數可根據下述條件進行測定。
(測定裝置及測定條件)
裝置:Hysitron Inc.製造之Tribo Indenter
使用壓頭:Berkovich(三棱錐型)
測定方法:單一壓入測定
壓入深度設定:2500 nm
壓入速度:2000 nm/秒
測定氣氛:空氣中
試樣尺寸:1 cm×1 cm
In this specification, the elastic modulus refers to the elastic modulus measured by the nanoindentation method at room temperature (23 ° C). The elastic modulus measured by the nanoindentation method can be measured under the following conditions.
(Measuring device and measuring conditions)
Device: Tribo Indenter by Hysitron Inc.
Use indenter: Berkovich (triangular pyramid type)
Measurement method: single indentation indentation depth setting: 2500 nm
Pressing speed: 2000 nm / second Measurement atmosphere: Sample size in air: 1 cm × 1 cm

中間層於50℃之空氣中放置1小時之時,源自勞動安全衛生法之有機溶劑預防規則之第1種有機溶劑、第2種有機溶劑或第3種有機溶劑之釋氣總量較佳為25 ppm以下、更佳為20 ppm以下、進而較佳為15 ppm以下、進而較佳為10 ppm以下、特別較佳為5 ppm以下、最佳為1 ppm以下。上述釋氣總量越少越佳,其下限例如為0.5 ppm(較佳為0.1 ppm、更佳為0 ppm)。一個實施形態中,中間層於150℃之空氣中放置1小時之時,源自乙酸乙酯之釋氣量與源自甲苯之釋氣量之合計量較佳為上述範圍。When the middle layer is left in the air at 50 ° C for 1 hour, the total amount of outgassing of the first organic solvent, the second organic solvent, or the third organic solvent derived from the Organic Solvent Prevention Rules of the Labor Safety and Health Law is better. It is 25 ppm or less, more preferably 20 ppm or less, still more preferably 15 ppm or less, still more preferably 10 ppm or less, particularly preferably 5 ppm or less, and most preferably 1 ppm or less. The lower the total amount of outgassing, the better, and the lower limit is, for example, 0.5 ppm (preferably 0.1 ppm, more preferably 0 ppm). In one embodiment, when the intermediate layer is left in the air at 150 ° C. for 1 hour, the total amount of the amount of gas released from ethyl acetate and the amount of gas released from toluene is preferably within the above range.

C. 黏著劑層
黏著劑層包括包含(甲基)丙烯酸系聚合物之活性能量線硬化型黏著劑。代表性而言,活性能量線硬化型黏著劑進而包含交聯劑及光聚合起始劑。包含活性能量線硬化型黏著劑之黏著劑層之黏著力、剛性等能夠藉由活性能量線照射而發生變化。作為活性能量線,例如可列舉γ射線、紫外線、可見光線、紅外線(熱線)、無線電波、α射線、β射線、電子束、電漿流、電離輻射線、粒子束等。一個實施形態中,活性能量線之照射係累積光量為500 mJ/cm2 ~1500 mJ/cm2 (較佳為1000 mJ/cm2 )之紫外線(使用以波長365 nm作為中心之高壓水銀燈)照射。
C. Adhesive layer <br/> The adhesive layer includes an active energy ray-curable adhesive containing a (meth) acrylic polymer. Typically, the active energy ray-curable adhesive further includes a crosslinking agent and a photopolymerization initiator. The adhesive force and rigidity of the adhesive layer containing the active energy ray-curable adhesive can be changed by irradiation with the active energy ray. Examples of the active energy rays include gamma rays, ultraviolet rays, visible rays, infrared rays (hot rays), radio waves, alpha rays, beta rays, electron beams, plasma flow, ionizing radiation, and particle beams. In one embodiment, the irradiation of the active energy ray is an ultraviolet ray (using a high-pressure mercury lamp with a wavelength of 365 nm as the center) with a cumulative light amount of 500 mJ / cm 2 to 1500 mJ / cm 2 (preferably 1000 mJ / cm 2 ). .

活性能量線硬化型黏著劑所含之(甲基)丙烯酸系聚合物代表性而言以1種或2種以上之(甲基)丙烯酸烷基酯作為單體成分而形成之丙烯酸系聚合物(均聚物或共聚物)。作為(甲基)丙烯酸烷基酯之具體例,可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸基酯、(甲基)丙烯酸異癸基酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等(甲基)丙烯酸C1-20烷基酯。The (meth) acrylic polymer contained in the active energy ray-curable adhesive is typically an acrylic polymer formed by using one or two or more kinds of (meth) acrylic acid alkyl esters as monomer components ( Homopolymer or copolymer). Specific examples of the alkyl (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, ( N-butyl methacrylate, isobutyl (meth) acrylate, second butyl (meth) acrylate, amyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate Ester, heptyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, octyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, (meth) ) Isononyl acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, (methyl) Tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, cetyl (meth) acrylate, heptadecyl (meth) acrylate C1-20 alkyl (meth) acrylates, such as esters, octadecyl (meth) acrylate, undecyl (meth) acrylate, and eicosyl (meth) acrylate.

活性能量線硬化型黏著劑所含之(甲基)丙烯酸系聚合物中,出於凝聚力、耐熱性、交聯性等改性之目的,亦可根據需要包含與能夠同上述(甲基)丙烯酸烷基酯共聚之其他單體相對應之結構單元。作為此種單體,例如可列舉:丙烯酸、甲基丙烯酸等含羧基單體;馬來酸酐、衣康酸酐等酸酐單體;(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯等含羥基單體;苯乙烯磺酸、烯丙基磺酸等含磺酸基單體;(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、丙烯醯基嗎啉等含氮單體;(甲基)丙烯酸胺基乙酯等(甲基)丙烯酸胺基烷基酯系單體;(甲基)丙烯酸甲氧基乙酯等(甲基)丙烯酸烷氧基烷基酯系單體;N-環己基馬來醯亞胺、N-異丙基馬來醯亞胺等馬來醯亞胺系單體;N-甲基衣康醯亞胺、N-乙基衣康醯亞胺等衣康醯亞胺系單體;琥珀醯亞胺系單體;乙酸乙烯酯、丙酸乙烯酯、N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮等乙烯基系單體;丙烯腈、甲基丙烯腈等氰基丙烯酸酯單體;(甲基)丙烯酸縮水甘油酯等含環氧基之丙烯酸系單體;(甲基)丙烯酸聚乙二醇酯、(甲基)丙烯酸聚丙二醇酯等二醇系丙烯酸酯單體;(甲基)丙烯酸四氫糠酯、氟代(甲基)丙烯酸酯、有機矽(甲基)丙烯酸酯等具有雜環、鹵素原子、矽原子等之丙烯酸酯系單體;異戊二烯、丁二烯、異丁烯等烯烴系單體;乙烯基醚等乙烯基醚系單體等。該等單體成分可單獨使用或者組合使用2種以上。一個實施形態中,活性能量線硬化型黏著劑所含之(甲基)丙烯酸系聚合物中,作為與能夠同(甲基)丙烯酸烷基酯共聚之其他單體成分相對應之結構單元,包含源自含羧基單體(特別較佳為丙烯酸或甲基丙烯酸)或含羥基單體(特別較佳為(甲基)丙烯酸羥基乙酯)之結構單元。源自含羧基單體之結構單元之含有比例相對於丙烯酸系聚合物100重量份,較佳為0.5重量份~20重量份,更佳為1重量份~10重量份。源自含羥基單體之結構單元之含有比例相對於丙烯酸系聚合物100重量份,較佳為0.5重量份~20重量份,更佳為1重量份~15重量份。The (meth) acrylic polymer contained in the active energy ray-curable adhesive may contain cohesive force, heat resistance, and cross-linking properties for the purpose of modification. Corresponding structural units of other monomers copolymerized with alkyl esters. Examples of such monomers include carboxyl-containing monomers such as acrylic acid and methacrylic acid; acid anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyethyl (meth) acrylate and hydroxypropyl (meth) acrylate And other hydroxyl-containing monomers; sulfonic acid-containing monomers such as styrene sulfonic acid and allyl sulfonic acid; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, acrylamide Nitrogen-containing monomers such as morpholine; aminoalkyl (meth) acrylate monomers such as aminoethyl (meth) acrylate; alkoxy (meth) acrylates such as methoxyethyl (meth) acrylate Alkyl alkyl ester-based monomers; N-cyclohexylmaleimide, N-isopropylmaleimide, and other maleimide monomers; N-methylitaconimine, N- Itaconic imine monomers such as ethyl itaconic imine; succinimine imine monomers; vinyl monomers such as vinyl acetate, vinyl propionate, N-vinyl pyrrolidone, methyl vinyl pyrrolidone, etc. Body; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; epoxy-containing acrylic monomers such as glycidyl (meth) acrylate; polyethylene glycol (meth) acrylate, (meth) ) Glycol acrylate monomers such as polypropylene glycol acrylate; tetrahydrofurfuryl (meth) acrylate, fluoro (meth) acrylate, silicone (meth) acrylate, etc. have heterocycles, halogen atoms, silicon Atom-based acrylate monomers; olefin-based monomers such as isoprene, butadiene, and isobutylene; vinyl ether-based monomers such as vinyl ether. These monomer components can be used individually or in combination of 2 or more types. In one embodiment, the (meth) acrylic polymer contained in the active energy ray-curable adhesive contains, as a structural unit corresponding to other monomer components copolymerizable with the alkyl (meth) acrylate, a structural unit including A structural unit derived from a carboxyl group-containing monomer (especially preferably acrylic acid or methacrylic acid) or a hydroxyl group-containing monomer (particularly preferably hydroxyethyl (meth) acrylate). The content ratio of the structural unit derived from a carboxyl group-containing monomer is preferably 0.5 to 20 parts by weight, and more preferably 1 to 10 parts by weight based on 100 parts by weight of the acrylic polymer. The content ratio of the structural unit derived from a hydroxyl group-containing monomer is preferably 0.5 to 20 parts by weight, and more preferably 1 to 15 parts by weight based on 100 parts by weight of the acrylic polymer.

活性能量線硬化型黏著劑可包含上述B項中說明之活性能量線反應性化合物(單體或低聚物)。The active energy ray-curable adhesive may contain the active energy ray-reactive compound (monomer or oligomer) described in item B above.

上述活性能量線硬化型黏著劑所含之(甲基)丙烯酸系聚合物之重量平均分子量較佳為30萬~200萬,更佳為50萬~150萬。重量平均分子量可藉由GPC(溶劑:THF)進行測定。The weight average molecular weight of the (meth) acrylic polymer contained in the active energy ray-curable adhesive is preferably 300,000 to 2 million, and more preferably 500,000 to 1.5 million. The weight average molecular weight can be measured by GPC (solvent: THF).

上述活性能量線硬化型黏著劑所含之(甲基)丙烯酸系聚合物之玻璃轉移溫度較佳為-50℃~30℃,更佳為-40℃~20℃。若為此種範圍,則能夠獲得耐熱性優異、可適用於加熱步驟之黏著片。The glass transition temperature of the (meth) acrylic polymer contained in the active energy ray-curable adhesive is preferably -50 ° C to 30 ° C, and more preferably -40 ° C to 20 ° C. If it is this range, the adhesive sheet which is excellent in heat resistance and can be used suitably for a heating process can be obtained.

上述活性能量線硬化型黏著劑可包含光聚合起始劑。作為光聚合起始劑,可使用任意適當之光聚合起始劑。例如,可使用上述B項中列舉之光聚合起始劑。光聚合起始劑之含有比例相對於黏著劑中之基礎聚合物100重量份,較佳為1重量份~20重量份,更佳為2重量份~10重量份。The active energy ray-curable adhesive may include a photopolymerization initiator. As the photopolymerization initiator, any appropriate photopolymerization initiator can be used. For example, the photopolymerization initiators listed in the above item B can be used. The content ratio of the photopolymerization initiator is preferably 1 to 20 parts by weight, and more preferably 2 to 10 parts by weight relative to 100 parts by weight of the base polymer in the adhesive.

上述黏著劑層較佳為包含交聯劑。作為交聯劑,例如可列舉異氰酸酯系交聯劑、環氧系交聯劑、噁唑啉系交聯劑、氮丙啶系交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑、脲系交聯劑、金屬醇鹽系交聯劑、金屬螯合物系交聯劑、金屬鹽系交聯劑、碳二亞胺系交聯劑、胺系交聯劑等。It is preferable that the said adhesive layer contains a crosslinking agent. Examples of the crosslinking agent include an isocyanate-based crosslinking agent, an epoxy-based crosslinking agent, an oxazoline-based crosslinking agent, an aziridine-based crosslinking agent, a melamine-based crosslinking agent, and a peroxide-based crosslinking agent. , Urea-based crosslinking agent, metal alkoxide-based crosslinking agent, metal chelate-based crosslinking agent, metal salt-based crosslinking agent, carbodiimide-based crosslinking agent, amine-based crosslinking agent, and the like.

上述交聯劑之含有比例相對於黏著劑之基礎聚合物100重量份,較佳為0.5重量份~10重量份,更佳為1重量份~8重量份。若為此種範圍,則能夠形成適當調整彈性模數之黏著劑層。The content of the crosslinking agent is preferably 0.5 to 10 parts by weight, and more preferably 1 to 8 parts by weight, based on 100 parts by weight of the base polymer of the adhesive. Within such a range, an adhesive layer can be formed in which the elastic modulus is appropriately adjusted.

一個實施形態中,較佳使用異氰酸酯系交聯劑。異氰酸酯系交聯劑就能夠與多種官能基反應之方面而言較佳。作為上述異氰酸酯系交聯劑之具體例,可列舉上述B項中說明之化合物。In one embodiment, an isocyanate-based crosslinking agent is preferably used. An isocyanate-based crosslinking agent is preferable in that it can react with various functional groups. Specific examples of the isocyanate-based crosslinking agent include the compounds described in the above item B.

活性能量線硬化型黏著劑可根據需要進而包含任意適當之添加劑。作為添加劑,例如可列舉活性能量線聚合促進劑、自由基捕獲劑、增黏劑、塑化劑(例如偏苯三酸酯系塑化劑、均苯四酸酯系塑化劑等)、顏料、染料、填充劑、防老劑、導電材料、抗靜電劑、紫外線吸收劑、光穩定劑、剝離調整劑、軟化劑、界面活性劑、阻燃劑、抗氧化劑等。The active energy ray-curable adhesive may further include any appropriate additives as needed. Examples of the additive include an active energy ray polymerization accelerator, a radical trapping agent, a tackifier, a plasticizer (such as a trimellitate-based plasticizer, a pyromellitic-based plasticizer, etc.), and a pigment , Dyes, fillers, antioxidants, conductive materials, antistatic agents, ultraviolet absorbers, light stabilizers, peel modifiers, softeners, surfactants, flame retardants, antioxidants, etc.

黏著劑層之厚度為1 μm~50 μm,較佳為1 μm~40 μm,進而較佳為3 μm~30 μm,特別較佳為3 μm~25 μm,最佳為5 μm~20 μm。若為此種範圍,則能夠獲得具有作為背面磨削步驟所使用之黏著帶之較佳黏著力之黏著帶。本發明中,藉由具備中間層,即便減薄黏著劑層之厚度,亦可獲得能夠良好地填埋凹凸面之黏著帶。此外,本發明中,由於黏著劑層較薄,因此能夠獲得溶劑含量較少、釋氣較少之黏著帶。The thickness of the adhesive layer is 1 μm to 50 μm, preferably 1 μm to 40 μm, further preferably 3 μm to 30 μm, particularly preferably 3 μm to 25 μm, and most preferably 5 μm to 20 μm. Within this range, an adhesive tape having a better adhesive force as the adhesive tape used in the back grinding step can be obtained. In the present invention, by providing the intermediate layer, even if the thickness of the adhesive layer is reduced, an adhesive tape capable of well filling the uneven surface can be obtained. In addition, in the present invention, since the adhesive layer is thin, an adhesive tape with less solvent content and less outgassing can be obtained.

一個實施形態中,利用熱機械分析(TMA)並將壓入深度設為黏著劑層之20%、將直徑0.5 mm之探針壓入黏著劑層而測定負荷值時,自測定開始起1秒後~300秒後之負荷之變化量(μN/(mm2 ・秒))為1900(μN/(mm2 ・秒))以下。該負荷之變化量可藉由{(自測定開始起300秒後之負荷值(μN/mm2 ))-(自測定開始起1秒後之負荷值(μN/mm2 ))}/299(秒)之式算出。再者,上述負荷值於23℃之環境下進行測定。此外,黏著劑層之剛性能夠藉由活性能量線照射而發生變化,上述負荷值係活性能量線照射前之負荷值。In one embodiment, when the load value is measured using thermomechanical analysis (TMA) and the penetration depth is set to 20% of the adhesive layer, and a 0.5 mm diameter probe is pressed into the adhesive layer, 1 second from the measurement start The amount of change in load (μN / (mm 2 · second)) after the next 300 seconds is 1900 (μN / (mm 2 · second)) or less. The amount of change in the load can be determined by {(load value after 300 seconds from measurement start (μN / mm 2 ))-(load value after 1 second from measurement start (μN / mm 2 ))} / 299 ( Seconds). The load value was measured in an environment of 23 ° C. In addition, the rigidity of the adhesive layer can be changed by active energy ray irradiation, and the load value is a load value before active energy ray irradiation.

於上述負荷之變化量為1900(μN/(mm2 ・秒))以下之情形時,黏著劑層之緩和性優異,具備該黏著層之黏著帶之凹凸追隨性優異,能夠良好地填埋被黏面之凹凸。尤其是,具備該黏著劑層之黏著帶於能夠經時地維持良好凹凸追隨性之方面而言較為有利。上述負荷之變化量較佳為1500(μN/(mm2 ・秒))以下,更佳為1000(μN/(mm2 ・秒))以下,進而較佳為500(μN/(mm2 ・秒))以下,特別較佳為100(μN/(mm2 ・秒))以下。上述負荷之變化量之下限例如為10(μN/(mm2 ・秒))。When the amount of change in the load is 1900 (μN / (mm 2 · s) or less), the adhesive layer has excellent ease, and the unevenness of the adhesive tape provided with the adhesive layer is excellent, and it can be buried well. Bump on the sticky surface. In particular, the adhesive tape provided with this adhesive layer is advantageous in the point which can maintain favorable uneven | corrugated followability over time. The change amount of the load is preferably 1500 (μN / (mm 2 · s)) or less, more preferably 1000 (μN / (mm 2 · s)) or less, and further preferably 500 (μN / (mm 2 · s) )) Or less, particularly preferably 100 (μN / (mm 2 · s)) or less. The lower limit of the change amount of the load is, for example, 10 (μN / (mm 2 · s)).

上述黏著劑層之彈性模數(活性能量線照射前)較佳為0.07 MPa~0.70 MPa,更佳為0.075 MPa~0.60 MPa,進而較佳為0.08 MPa~0.50 MPa,特別較佳為0.1 MPa以上且未達0.7 MPa。若為此種範圍,則能夠獲得具有作為用於背面磨削步驟之黏著帶之較佳黏著力之黏著帶。The elastic modulus (before active energy ray irradiation) of the adhesive layer is preferably 0.07 MPa to 0.70 MPa, more preferably 0.075 MPa to 0.60 MPa, still more preferably 0.08 MPa to 0.50 MPa, and particularly preferably 0.1 MPa or more. And it does not reach 0.7 MPa. Within such a range, an adhesive tape having a preferable adhesive force as an adhesive tape used for the back surface grinding step can be obtained.

上述黏著劑層之活性能量線照射後之彈性模數較佳為1 MPa以上,更佳為5 MPa以上,進而較佳為10 MPa以上。若為此種範圍,則能夠獲得於特定步驟(例如背面磨削步驟)後之剝離性優異之半導體保護用黏著帶。黏著劑層之活性能量線照射後之彈性模數之上限較佳為1000 MPa以下,更佳為500 MPa以下,進而較佳為400 MPa以下。The elastic modulus after the active energy ray irradiation of the adhesive layer is preferably 1 MPa or more, more preferably 5 MPa or more, and even more preferably 10 MPa or more. If it is this range, the adhesive tape for semiconductor protection which is excellent in peelability after a specific process (for example, a back surface grinding process) can be obtained. The upper limit of the elastic modulus after the active energy ray irradiation of the adhesive layer is preferably 1,000 MPa or less, more preferably 500 MPa or less, and still more preferably 400 MPa or less.

D. 基材
上述基材可包含任意適當之樹脂。一個實施形態中,基材包含熱塑性樹脂。作為上述樹脂,例如可列舉:低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯系樹脂、聚萘二甲酸乙二酯等聚酯系樹脂、聚醯亞胺系樹脂、聚醚酮、聚苯乙烯系樹脂、聚氯乙烯、聚偏二氯乙烯、氟系樹脂、矽系樹脂、纖維素系樹脂等。其中,較佳為聚酯系樹脂。
D. Substrate <br/> The above substrate may contain any appropriate resin. In one embodiment, the substrate includes a thermoplastic resin. Examples of the resin include low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymerization. Polyolefins such as propylene, polybutene, and polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene- (meth) acrylic copolymers, ethylene- (meth) acrylates (random, (Alternative) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethane resins, polyester resins such as polyethylene naphthalate, polyimide resins, polyethers Ketones, polystyrene resins, polyvinyl chloride, polyvinylidene chloride, fluorine resins, silicon resins, cellulose resins, etc. Among these, a polyester resin is preferred.

構成上述基材之樹脂之玻璃轉移溫度較佳為60℃~500℃,更佳為100℃~500℃。若為此種範圍,則能夠獲得耐熱性優異、可適用於加熱步驟之黏著片。再者,「玻璃轉移溫度」係指:於DMA法(拉伸法)中,於升溫速度為5℃/分鐘、樣品寬度為5 mm、卡盤間距離為20 mm、頻率為10 Hz之條件下確認之顯示出損耗正切(tanδ)之峰之溫度。The glass transition temperature of the resin constituting the substrate is preferably 60 ° C to 500 ° C, and more preferably 100 ° C to 500 ° C. If it is this range, the adhesive sheet which is excellent in heat resistance and can be used suitably for a heating process can be obtained. In addition, the "glass transition temperature" refers to the conditions in the DMA method (tensile method) at a temperature increase rate of 5 ° C / min, a sample width of 5 mm, a distance between chucks of 20 mm, and a frequency of 10 Hz. The temperature confirmed below shows the peak of the loss tangent (tanδ).

上述基材之厚度較佳為50 μm~300 μm,更佳為80 μm~250 μm,進而較佳為100 μm~200 μm。The thickness of the substrate is preferably 50 μm to 300 μm, more preferably 80 μm to 250 μm, and still more preferably 100 μm to 200 μm.

上述基材之彈性模數較佳為300 MPa~6000 MPa,更佳為400~5000 MPa。若為此種範圍,則能夠獲得可適度追隨於貼合面之凹凸之半導體保護用黏著帶。The elastic modulus of the substrate is preferably 300 MPa to 6000 MPa, and more preferably 400 to 5000 MPa. If it is such a range, the adhesive tape for semiconductor protection which can follow the unevenness | corrugation of a bonding surface moderately can be obtained.

為了提高與鄰接層之密接性及保持性等,可對上述基材之表面實施任意表面處理。作為上述表面處理,例如可列舉:鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化輻射線處理等化學處理或物理處理、塗佈處理。In order to improve the adhesion to the adjacent layer, retention, etc., the surface of the substrate may be subjected to any surface treatment. Examples of the surface treatment include chemical treatment, physical treatment, and coating treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, and ionizing radiation treatment.

E. 半導體保護用黏著帶之製造方法
上述半導體保護用黏著帶可利用任意適當之方法進行製造。半導體保護用黏著帶例如可如下形成:於上述基材上塗佈上述中間層形成用組合物後,對塗佈層照射紫外線而形成中間層,於該中間層上塗佈上述活性能量線硬化型黏著劑而形成。
E. semiconductor protection protective adhesive tape may be manufactured by any suitable method of semiconductor <br/> method of producing the adhesive tape. The adhesive tape for semiconductor protection can be formed, for example, after applying the composition for forming an intermediate layer on the substrate, irradiating the coating layer with ultraviolet rays to form an intermediate layer, and coating the intermediate layer with the active energy ray hardening type. Formed by an adhesive.

作為中間層形成用組合物之塗佈方法,可採用棒塗機塗覆、氣刀塗覆、凹版塗覆、凹版逆向塗覆、逆轉輥塗覆、唇塗、模塗、浸塗、膠版印刷、柔版印刷、絲網印刷等各種方法。As a coating method for the composition for forming the intermediate layer, bar coater coating, air knife coating, gravure coating, gravure reverse coating, reverse roll coating, lip coating, die coating, dip coating, and offset printing can be used. , Flexographic printing, screen printing and other methods.

對中間層形成用組合物照射之紫外線之累積光量較佳為1000 mW/cm2 ~5000 mW/cm2 ,更佳為2000 mW/cm2 ~4000 mW/cm2The cumulative light amount of ultraviolet rays irradiated to the composition for forming an intermediate layer is preferably 1000 mW / cm 2 to 5000 mW / cm 2 , and more preferably 2000 mW / cm 2 to 4000 mW / cm 2 .

作為活性能量線硬化型黏著劑之塗佈方法,可採用作為中間層形成用組合物之塗佈方法而例示之上述塗佈方法。此外,亦可採用另行於剝離襯墊上形成黏著劑層後將其貼合於基材之方法等。As the application method of the active energy ray-curable adhesive, the above-mentioned application method exemplified as the application method of the composition for forming an intermediate layer can be adopted. In addition, a method of forming an adhesive layer on a release liner separately and bonding the adhesive layer to a substrate may be adopted.

F. 半導體保護用黏著帶之用途
本發明之半導體保護用黏著帶可於對具有凹凸面之電子零件(例如具備凸塊之電子零件)設置電磁波屏蔽體時將不需要形成電磁波屏蔽體之凹凸面(凸塊形成面)掩蔽時適合地使用。
F. Use of adhesive tape for semiconductor protection <br/> The adhesive tape for semiconductor protection of the present invention can be used to form an electromagnetic wave shield when an electromagnetic wave shield is provided on an electronic part having an uneven surface (for example, an electronic part having a bump). It is suitable for masking the uneven surface (bump forming surface) of a body.

一個實施形態中,本發明之半導體保護用黏著帶可用於掩蔽具有高度為50 μm以上(例如50 μm~300 μm)之凸塊之面。通常,於該面中設置有多個凸塊。該凸塊之配置間隔(自凸塊之中心起至相鄰之凸塊之中心為止之距離)例如為100 μm~500 μm。此外,一個實施形態中,凸塊之俯視形狀為圓形,其直徑為100 μm~300 μm。若使用本發明之半導體保護用黏著帶,則能夠良好地掩蔽如上述般之具有凸塊之面,此外,本發明之半導體保護用黏著帶可無殘膠地自該面上剝離。
實施例
In one embodiment, the adhesive tape for semiconductor protection of the present invention can be used to mask the surface of a bump having a height of 50 μm or more (for example, 50 μm to 300 μm). Usually, a plurality of bumps are provided on the surface. The arrangement interval of the bumps (the distance from the center of the bumps to the center of the adjacent bumps) is, for example, 100 μm to 500 μm. In addition, in one embodiment, a plan view shape of the bump is circular, and a diameter thereof is 100 μm to 300 μm. When the adhesive tape for semiconductor protection of the present invention is used, the surface having bumps as described above can be well masked. In addition, the adhesive tape for semiconductor protection of the present invention can be peeled from the surface without residue.
Examples

以下,藉由實施例具體地說明本發明,但本發明不限定於該等實施例。實施例中之試驗及評價方法如下所示。此外,於未特別記載之情形時,「份」及「%」係重量基準。Hereinafter, the present invention will be specifically described by examples, but the present invention is not limited to these examples. The test and evaluation methods in the examples are shown below. In addition, "part" and "%" are based on weight when there is no special record.

(1)釋氣量
將半導體保護用黏著帶切割成5 cm2 之大小,將其作為評價試樣。將評價樣品於遮光條件下封入至20 mL頂空小瓶中。將封入有評價試樣之頂空小瓶利用頂空進樣器(HSS)於150℃下加熱1小時。其後,利用氣相色譜(GC)對1 mL氣相部分測定乙酸乙酯量及甲苯量。
<HSS條件>
裝置:Agilent Technologies,7697A
加熱溫度:150℃
加熱時間:1小時
樣品定量環溫度:160℃
輸送管線溫度:200℃
加壓時間:0.1分鐘
注入時間:0.50分鐘
<GC條件>
裝置:Agilent Technologies,7890B
柱:HP-1(0.250 mm×30 m、df=1.0 μm)
柱溫度:40℃(3分鐘)→10℃/分鐘→120℃→20℃/分鐘→300℃(10分鐘)
柱流量:1 mL/分鐘(He)
柱壓力:恆定流量模式(81 kPa)
注入口溫度:250℃
注入量:1 mL
注入方式:分流比(20:1)
檢測器:FID
檢測器溫度:250℃
(1) Outgassing amount The semiconductor protective adhesive tape was cut to a size of 5 cm 2 and used as an evaluation sample. The evaluation sample was sealed in a 20 mL headspace vial under shading conditions. The headspace vial containing the evaluation sample was heated at 150 ° C for 1 hour using a headspace sampler (HSS). Thereafter, the amount of ethyl acetate and the amount of toluene were measured with respect to 1 mL of the gas phase by gas chromatography (GC).
< HSS conditions >
Device: Agilent Technologies, 7697A
Heating temperature: 150 ° C
Heating time: 1 hour Sample loop temperature: 160 ° C
Conveying pipeline temperature: 200 ° C
Pressing time: 0.1 minutes Injection time: 0.50 minutes <GC conditions>
Device: Agilent Technologies, 7890B
Column: HP-1 (0.250 mm × 30 m, df = 1.0 μm)
Column temperature: 40 ° C (3 minutes) → 10 ° C / minute → 120 ° C → 20 ° C / minute → 300 ° C (10 minutes)
Column flow: 1 mL / min (He)
Column pressure: constant flow mode (81 kPa)
Note inlet temperature: 250 ℃
Injection volume: 1 mL
Injection method: split ratio (20: 1)
Detector: FID
Detector temperature: 250 ° C

(2)熱機械分析(TMA)
按照下述條件進行黏著劑層之熱機械分析(TMA),測定自測定開始起1秒後~300秒後之負荷之變化量(μN/(mm2 ・秒))。
裝置:SII Nano Technology公司製造,TMA/SS7100
測定模式:壓縮膨脹法
探針直徑:0.5 mm(壓縮膨脹法)
溫度程序:23℃恆定
測定氣氛:N2 (流量為200 ml/分鐘)
壓入量:黏著劑層之厚度×20%
(2) Thermomechanical analysis (TMA)
The thermomechanical analysis (TMA) of the adhesive layer was performed under the following conditions, and the amount of change in load (μN / (mm 2 · s)) from 1 second to 300 seconds after the measurement was measured was measured.
Device: SII Nano Technology, TMA / SS7100
Measurement mode: Compression expansion probe diameter: 0.5 mm (Compression expansion method)
Temperature program: 23 ° C constant measurement atmosphere: N 2 (flow rate 200 ml / min)
Press-in amount: thickness of adhesive layer × 20%

(3)凸塊填埋性
使用貼帶機DR-3000II(日東精機股份有限公司製造),於凸塊間距為400 μm之附凸塊之8英吋大小之晶圓上黏貼半導體保護用黏著帶(黏貼條件:速度10 mm/秒、黏貼溫度:23℃、黏貼壓力:0.45 MPa、輥硬度:80度)。於黏貼後,利用顯微鏡確認凸塊之填埋性。通常會於凸塊之周圍以包圍凸塊之方式產生氣泡,若該氣泡未與相鄰之凸塊之氣泡連接則視為合格(表中記作○),將氣泡連接之情形視為不合格(表中記作×)。
(3) The bump-filling device uses a DR-3000II (manufactured by Nitto Seiki Co., Ltd.), and an 8-inch wafer with bumps with a pitch of 400 μm is attached to the semiconductor protection adhesive tape. (Adhesion conditions: speed 10 mm / sec, adhesion temperature: 23 ° C, adhesion pressure: 0.45 MPa, roller hardness: 80 degrees). After sticking, the burial property of the bump was confirmed with a microscope. Generally, bubbles are generated around the bumps by surrounding the bumps. If the bubble is not connected to the bubbles of adjacent bumps, it is regarded as qualified (marked as ○ in the table). (Indicated as x in the table).

(4)研削後之翹曲
使用DR-3000III,將半導體保護用黏著帶黏貼於8英吋之矽鏡面晶圓。黏貼條件與凸塊填埋性評價相同。利用晶圓研磨機DFG-8560(DISCO公司製造),將黏貼後之附黏著帶之晶片研削至矽厚為200 μm為止。研削後,利用直尺/鋼尺測量晶圓之翹曲量(對於將晶圓放置於水平面上時之晶圓下表面,自水平面起之距離之最大值與最小值之差)。
(4) The warpage after grinding uses DR-3000III, the semiconductor protection adhesive tape is stuck on the 8-inch silicon mirror wafer. The sticking conditions are the same as the bump burial evaluation. A wafer grinder DFG-8560 (manufactured by DISCO) was used to grind the wafer with the adhesive tape attached to a thickness of 200 μm. After grinding, use a ruler / steel ruler to measure the warpage of the wafer (for the lower surface of the wafer when the wafer is placed on a horizontal surface, the difference between the maximum and minimum distances from the horizontal plane).

[實施例1]
(中間層形成用組合物a之製備)
將丙烯酸2-乙基己酯(2EHA)90重量份、丙烯酸(AA)10重量份、光聚合起始劑(商品名:Irgacure184,BASF公司製造)0.05重量份及光聚合起始劑(商品名:Irgacure651,BASF公司製造)0.05重量份、以及二季戊四醇六丙烯酸酯(商品名:KAYARAD DPHA,日本化藥股份有限公司製造)0.10重量份投入至燒瓶中,充分攪拌,獲得中間層形成用組合物a(丙烯酸系聚合物漿料)。
(活性能量線硬化型黏著劑a之製備)
製備包含包括丙烯酸2-乙基己酯(2-EHA)/丙烯醯基嗎啉/丙烯酸羥基乙酯(HEA)=75/25/10(重量比)之丙烯酸系聚合物100重量份、聚異氰酸酯化合物(商品名「CORONATE L」,東曹股份有限公司製造)2重量份、光聚合起始劑(商品名「Irgacure651」,BASF公司製造)7重量份及甲苯之活性能量線硬化型黏著劑a。
(半導體保護用黏著帶之製作)
於用有機矽對單面進行剝離處理之厚度75 μm之聚酯薄膜(商品名:Lumirror ES10#75,東麗股份有限公司製造)上塗佈上述中間層形成用組合物a,形成塗佈層。於隔絕氧氣之環境下,對上述塗佈層照射紫外線。此時,使用高壓水銀燈(Toshiba Lighting & Technology Corporation製造),照射照度為100 mW/cm2 (利用於約350 nm具有最大靈敏度之TOPCON UVR-T1進行測定)之紫外線,直至光量達到3000 mW/cm2 為止。如上操作,獲得包含基材及厚度300 μm之中間層a之積層體A。
另一方面,於厚度38 μm之聚酯系隔離膜(商品名「Diafoil MRF」,三菱樹脂股份有限公司製造)之有機矽處理面上塗佈上述活性能量線硬化型黏著劑a,於140℃下加熱120秒鐘,形成厚度10 μm之黏著劑層a。
將黏著劑層a轉印至上述積層體A之中間層a側,獲得包含基材(75 μm)/包含UV聚合(甲基)丙烯酸系聚合物之中間層(300 μm)/包含活性能量線硬化型黏著劑之黏著劑層(10 μm)之厚度為385 μm之半導體保護用黏著帶。
將所得之半導體保護用黏著帶供於上述評價而得到之結果示於表1。
[Example 1]
(Preparation of composition a for intermediate layer formation)
90 parts by weight of 2-ethylhexyl acrylate (2EHA), 10 parts by weight of acrylic acid (AA), 0.05 parts by weight of a photopolymerization initiator (trade name: Irgacure184, manufactured by BASF) and a photopolymerization initiator (trade name) : Irgacure651, manufactured by BASF Corporation) 0.05 parts by weight and 0.10 parts by weight of dipentaerythritol hexaacrylate (trade name: KAYARAD DPHA, manufactured by Nippon Kayaku Co., Ltd.) were put into a flask, and thoroughly stirred to obtain a composition for forming an intermediate layer a (acrylic polymer slurry).
(Preparation of active energy ray hardening adhesive a)
Preparation of 100 parts by weight of acrylic polymer including 2-ethylhexyl acrylate (2-EHA) / propenyl morpholine / hydroxyethyl acrylate (HEA) = 75/25/10 (weight ratio), polyisocyanate 2 parts by weight of a compound (trade name "CORONATE L", manufactured by Tosoh Corporation), 7 parts by weight of a photopolymerization initiator (trade name "Irgacure651", manufactured by BASF) and an active energy ray-curable adhesive a of toluene .
(Production of adhesive tape for semiconductor protection)
A 75 μm-thick polyester film (trade name: Lumirror ES10 # 75, manufactured by Toray Co., Ltd.) having a peeling treatment on one side with silicone was coated with the composition a for forming an intermediate layer to form a coating layer. . The above-mentioned coating layer is irradiated with ultraviolet rays in an environment blocked from oxygen. At this time, a high-pressure mercury lamp (manufactured by Toshiba Lighting & Technology Corporation) was used to irradiate ultraviolet rays with an illuminance of 100 mW / cm 2 (measured using TOPCON UVR-T1 with a maximum sensitivity of about 350 nm) until the light amount reached 3000 mW / cm 2 so far. As described above, a laminated body A including a substrate and an intermediate layer a having a thickness of 300 μm was obtained.
On the other hand, the active energy ray-curable adhesive a was applied to the silicone-treated surface of a polyester-based release film (trade name "Diafoil MRF", manufactured by Mitsubishi Resins Co., Ltd.) having a thickness of 38 μm, and the temperature was 140 ° C. Heating for 120 seconds to form an adhesive layer a having a thickness of 10 μm.
The adhesive layer a was transferred to the intermediate layer a side of the laminated body A to obtain an intermediate layer (300 μm) containing a substrate (75 μm) / a UV polymerized (meth) acrylic polymer / containing an active energy ray A semiconductor protection adhesive tape having a thickness of an adhesive layer (10 μm) of a hardening type adhesive of 385 μm.
Table 1 shows the results obtained by subjecting the obtained adhesive tape for semiconductor protection to the above evaluation.

[實施例2]
(中間層形成用組合物b之製備)
除了未調配二季戊四醇六丙烯酸酯之外,與實施例1同樣操作,獲得中間層形成用組合物b。
(半導體保護用黏著帶之製作)
除了使用中間層形成用組合物b來代替中間層形成用組合物a之外,與實施例1同樣操作,獲得半導體保護用黏著帶。
將所得半導體保護用黏著帶供於上述評價而得到之結果示於表1。
[Example 2]
(Preparation of composition b for intermediate layer formation)
A composition b for forming an intermediate layer was obtained in the same manner as in Example 1 except that dipentaerythritol hexaacrylate was not prepared.
(Production of adhesive tape for semiconductor protection)
Except having used the composition b for intermediate layer formation instead of the composition a for intermediate layer formation, it carried out similarly to Example 1, and obtained the adhesive tape for semiconductor protection.
The results obtained by applying the obtained adhesive tape for semiconductor protection to the above evaluation are shown in Table 1.

[比較例1]
(中間層形成用組合物c之製備)
製備包含包括丙烯酸乙酯(EA)/丙烯酸丁酯(BA)/丙烯酸(AA)=50/50/5(質量比)之丙烯酸系聚合物100重量份、UV低聚物(商品名「ARONIX M321」,東亞合成股份有限公司製造)15重量份、光聚合起始劑(商品名「Irgacure651」,BASF公司製造)1重量份、交聯劑(商品名「TETRAD C」,三菱瓦斯化學股份有限公司製造)0.05重量份及甲苯之中間層形成用組合物c。
(活性能量線硬化型黏著劑c之製備)
製備包含包括丙烯酸乙酯(EA)/丙烯酸丁酯(BA)/丙烯酸2-羥基乙酯(HEA)=50/50/20(重量比)之丙烯酸系聚合物100重量份、UV低聚物(商品名「ARONIX M321」,東亞合成股份有限公司製造)15重量份、光聚合起始劑(商品名「Irgacure 651」,BASF公司製造)1重量份、聚異氰酸酯化合物(商品名「CORONATE L」,東曹股份有限公司製造)0.07重量份及甲苯之活性能量線硬化型黏著劑c。
(黏著帶之製作)
將中間層形成用組合物c塗佈於厚度50 μm之PET薄膜(商品名「Lumirror S105」,東麗股份有限公司製造)後,於120℃下加熱120秒鐘,形成厚度為60 μm之中間層c1。
接著,將該中間層c1轉印至厚度135 μm之EVA薄膜(商品名「FANCLAIR NRW135」,GUNZE公司製造)之壓花面,獲得厚度為195 μm之積層體C1(EVA基材(135 μm)/中間層c1(60 μm))。
進而,利用與上述相同之方法,於其他PET薄膜上形成其他中間層c1'(厚度60 μm),將該中間層c1'轉印於積層體C1之中間層c1上,獲得包含基材(135 μm)/中間層c(120 μm)之厚度為255 μm之積層體C2。
另一方面,於厚度50 μm之PET薄膜(商品名「Lumirror S105」,東麗股份有限公司製造)上塗佈上述活性能量線硬化型黏著劑c,於120℃下加熱120秒鐘,形成厚度30 μm之黏著劑層c。
將黏著劑層c轉印於積層體C1之中間層c側,獲得包含基材(135 μm)/中間層c(120 μm)/黏著劑層(30 μm)之厚度285 μm之黏著帶。
將所得黏著帶供於上述評價而獲得之結果示於表1。
[Comparative Example 1]
(Preparation of composition c for forming an intermediate layer)
100 parts by weight of an acrylic polymer including ethyl acrylate (EA) / butyl acrylate (BA) / acrylic acid (AA) = 50/50/5 (mass ratio) and a UV oligomer (trade name "ARONIX M321") ", Manufactured by Toa Synthesis Co., Ltd.) 15 parts by weight, photopolymerization initiator (trade name" Irgacure651 ", manufactured by BASF), 1 part by weight, crosslinker (trade name" TETRAD C ", Mitsubishi Gas Chemical Co., Ltd.) (Manufactured) 0.05 parts by weight of toluene and intermediate layer-forming composition c.
(Preparation of active energy ray hardening adhesive c)
Preparation of 100 parts by weight of an acrylic polymer including ethyl acrylate (EA) / butyl acrylate (BA) / 2-hydroxyethyl acrylate (HEA) = 50/50/20 (weight ratio), UV oligomer ( Trade name "ARONIX M321", manufactured by Toa Synthesis Co., Ltd., 15 parts by weight, photopolymerization initiator (trade name "Irgacure 651", manufactured by BASF), 1 part by weight, polyisocyanate compound (trade name "CORONATE L", Tosoh Co., Ltd.) 0.07 parts by weight and toluene active energy ray-curable adhesive c.
(Making of adhesive tape)
The composition c for forming an intermediate layer was applied to a PET film (trade name "Lumirror S105", manufactured by Toray Co., Ltd.) having a thickness of 50 μm, and then heated at 120 ° C for 120 seconds to form an intermediate having a thickness of 60 μm. Layer c1.
Next, the intermediate layer c1 was transferred to an embossed surface of an EVA film (trade name "FANCLAIR NRW135", manufactured by Gunze Co., Ltd.) with a thickness of 135 μm to obtain a laminated body C1 (EVA substrate (135 μm)) with a thickness of 195 μm. / Intermediate layer c1 (60 μm)).
Further, another intermediate layer c1 ′ (thickness 60 μm) was formed on other PET films by the same method as above, and this intermediate layer c1 ′ was transferred onto the intermediate layer c1 of the laminated body C1 to obtain a substrate (135 μm) / interlayer c (120 μm) is a laminated body C2 having a thickness of 255 μm.
On the other hand, the above-mentioned active energy ray-curable adhesive c was coated on a PET film (trade name "Lumirror S105", manufactured by Toray Co., Ltd.) having a thickness of 50 μm, and heated at 120 ° C for 120 seconds to form a thickness. 30 μm adhesive layer c.
The adhesive layer c was transferred to the intermediate layer c side of the laminated body C1 to obtain an adhesive tape having a thickness of 285 μm including the substrate (135 μm) / intermediate layer c (120 μm) / adhesive layer (30 μm).
The results obtained by applying the obtained adhesive tape to the above evaluation are shown in Table 1.

[比較例2]
(中間層形成用組合物d之製備)
除了將交聯劑(商品名「TETRAD C」,三菱瓦斯化學股份有限公司製造)之調配量設為0.2重量份之外,與比較例1同樣操作,獲得中間層形成用組合物d。
(黏著帶之製作)
除了使用中間層形成用組合物d來代替中間層形成用組合物c之外,與比較例1同樣操作,獲得黏著帶。
將所得黏著帶供於上述評價而得到之結果示於表1。
[Comparative Example 2]
(Preparation of composition d for intermediate layer formation)
A composition d for forming an intermediate layer was obtained in the same manner as in Comparative Example 1 except that the blending amount of the cross-linking agent (trade name "TETRAD C", manufactured by Mitsubishi Gas Chemical Co., Ltd.) was 0.2 parts by weight.
(Making of adhesive tape)
An adhesive tape was obtained in the same manner as in Comparative Example 1 except that the intermediate layer-forming composition d was used instead of the intermediate layer-forming composition c.
The results obtained by applying the obtained adhesive tape to the above evaluation are shown in Table 1.

[比較例3]
(中間層之形成)
使EVA樹脂粒料(商品名「EV150」,DuPont-Mitsui Polychemicals Co.,Ltd.製造)以20重量%之濃度溶解於甲苯,製備中間層形成用組合物e。
接著,將該中間層形成用組合物e塗佈於厚度100 μm之PET薄膜(商品名「Lumirror ES10」,東麗股份有限公司製)上,於120℃下乾燥2分鐘,獲得積層體E1(PET基材(100 μm)/中間層e1(200 μm))。
進而,將中間層形成用組合物e塗佈於積層體E1之中間層e1上,使其乾燥,獲得積層體E2(PET基材(100 μm)/中間層e2(300 μm))。
進而,將中間層形成用組合物e塗佈於積層體E2之中間層e2上,使其乾燥,獲得積層體E3(PET基材(100 μm)/中間層e(400 μm))。
(黏著劑層之形成)
製備包含包括丙烯酸丁酯(BA)/丙烯酸2-羥基乙酯(HEA)/丙烯腈(AN)/丙烯酸(AA)=90/2/5/3(重量比)之丙烯酸系聚合物100重量份、聚異氰酸酯化合物(商品名「CORONATE L」,東曹股份有限公司製造)1.75重量份、交聯劑(商品名「TETRAD C」,三菱瓦斯化學股份有限公司製造)0.8重量份及甲苯之活性能量線硬化型黏著劑e。
將該活性能量線硬化型黏著劑e塗佈於厚度50 μm之PET薄膜(商品名「Lumirror S105」,東麗股份有限公司製造)後,於120℃下加熱120秒鐘,形成厚度10 μm之黏著劑層e。
(黏著帶之製作)
將黏著劑層e轉印於上述積層體E3之中間層e上,獲得包含基材(100 μm)/中間層e(400 μm)/黏著劑層e(10 μm))之厚度510 μm之黏著帶。
將所得黏著帶供於上述評價而得到之結果示於表1。
[Comparative Example 3]
(Formation of the middle layer)
EVA resin pellets (trade name "EV150", manufactured by DuPont-Mitsui Polychemicals Co., Ltd.) were dissolved in toluene at a concentration of 20% by weight to prepare a composition e for forming an intermediate layer.
Next, the composition e for forming an intermediate layer was coated on a PET film (trade name "Lumirror ES10", manufactured by Toray Industries, Ltd.) with a thickness of 100 µm, and dried at 120 ° C for 2 minutes to obtain a laminate E1 ( PET substrate (100 μm) / interlayer e1 (200 μm)).
Furthermore, the composition e for forming an intermediate layer was applied to the intermediate layer e1 of the multilayer body E1 and dried to obtain a multilayer body E2 (PET substrate (100 μm) / intermediate layer e2 (300 μm)).
Furthermore, the composition e for forming an intermediate layer was applied to the intermediate layer e2 of the multilayer body E2 and dried to obtain a multilayer body E3 (PET substrate (100 μm) / intermediate layer e (400 μm)).
(Formation of adhesive layer)
Preparation of 100 parts by weight of an acrylic polymer including butyl acrylate (BA) / 2-hydroxyethyl acrylate (HEA) / acrylonitrile (AN) / acrylic acid (AA) = 90/2/5/3 (weight ratio) 1.75 parts by weight of polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation), cross-linking agent (trade name "TETRAD C", manufactured by Mitsubishi Gas Chemical Co., Ltd.) 0.8 parts by weight and active energy of toluene Wire hardening adhesive e.
This active energy ray hardening adhesive e was applied to a PET film (trade name "Lumirror S105", manufactured by Toray Co., Ltd.) having a thickness of 50 μm, and then heated at 120 ° C for 120 seconds to form a thickness of 10 μm. Adhesive layer e.
(Making of adhesive tape)
The adhesive layer e was transferred onto the intermediate layer e of the above-mentioned multilayer body E3 to obtain a thickness of 510 μm including the substrate (100 μm) / intermediate layer e (400 μm) / adhesive layer e (10 μm)). band.
The results obtained by applying the obtained adhesive tape to the above evaluation are shown in Table 1.

[比較例4]
(中間層形成用組合物f之製備)
製備包含包括丙烯酸乙酯(EA)/丙烯酸丁酯(BA)/丙烯酸(AA)=50/50/5(質量比)之丙烯酸系聚合物100重量份、光聚合起始劑(商品名「Irgacure 651」,BASF公司製造)3重量份、聚異氰酸酯化合物(商品名「CORONATE L」,東曹股份有限公司製造)1重量份及甲苯之中間層形成用組合物f。
(活性能量線硬化型黏著劑f之製備)
製備包含包括丙烯酸2-乙基己酯(2-EHA)/丙烯醯基嗎啉/丙烯酸羥基乙酯(HEA)=75/25/10(重量比)之丙烯酸系聚合物100重量份、聚異氰酸酯化合物(商品名「CORONATE L」,東曹股份有限公司製造)5重量份、光聚合起始劑(商品名「Irgacure 651」,BASF公司製造)3重量份及甲苯之活性能量線硬化型黏著劑f。
(黏著帶之製作)
將中間層形成用組合物f塗佈於厚度50 μm之PET薄膜(商品名「Lumirror S105」,東麗股份有限公司製造)後,於120℃加熱120秒鐘,獲得積層體F1(PET基材(50 μm)/中間層f1(75 μm))。
進而,將中間層形成用組合物f塗佈於積層體F1之中間層f1上,使其乾燥,獲得積層體F2(PET基材(50 μm)/中間層f(150 μm))。
另一方面,於厚度50 μm之PET薄膜(商品名「Lumirror S105」,東麗股份有限公司製造)上塗佈上述活性能量線硬化型黏著劑f,於120℃下加熱120秒鐘,形成厚度5 μm之黏著劑層f。
將黏著劑層f轉印於積層體F2之中間層f側,獲得包含基材(50 μm)/中間層f(150 μm)/黏著劑層f(5 μm)之厚度為205 μm之黏著帶。
將所得黏著帶供於上述評價而獲得之結果示於表1。
[Comparative Example 4]
(Preparation of composition f for intermediate layer formation)
100 parts by weight of an acrylic polymer including ethyl acrylate (EA) / butyl acrylate (BA) / acrylic acid (AA) = 50/50/5 (mass ratio) and a photopolymerization initiator (trade name "Irgacure 651 ", manufactured by BASF Corporation) 3 parts by weight, 1 part by weight of a polyisocyanate compound (trade name" CORONATE L ", manufactured by Tosoh Corporation) and toluene-containing intermediate layer-forming composition f.
(Preparation of active energy ray hardening adhesive f)
Preparation of 100 parts by weight of acrylic polymer including 2-ethylhexyl acrylate (2-EHA) / propenyl morpholine / hydroxyethyl acrylate (HEA) = 75/25/10 (weight ratio), polyisocyanate 5 parts by weight of a compound (trade name "CORONATE L", manufactured by Tosoh Corporation), 3 parts by weight of a photopolymerization initiator (trade name "Irgacure 651", manufactured by BASF) and an active energy ray-curable adhesive of toluene f.
(Making of adhesive tape)
The intermediate layer-forming composition f was applied to a 50 μm-thick PET film (trade name “Lumirror S105”, manufactured by Toray Corporation), and then heated at 120 ° C. for 120 seconds to obtain a laminate F1 (PET substrate (50 μm) / intermediate layer f1 (75 μm)).
Further, the intermediate layer-forming composition f was applied to the intermediate layer f1 of the multilayer body F1 and dried to obtain a multilayer body F2 (PET substrate (50 μm) / intermediate layer f (150 μm)).
On the other hand, a 50 μm-thick PET film (trade name “Lumirror S105”, manufactured by Toray Co., Ltd.) was coated with the active energy ray-curable adhesive f, and heated at 120 ° C. for 120 seconds to form a thickness. 5 μm adhesive layer f.
The adhesive layer f was transferred to the intermediate layer f side of the multilayer body F2 to obtain an adhesive tape having a thickness of 205 μm including the substrate (50 μm) / intermediate layer f (150 μm) / adhesive layer f (5 μm). .
The results obtained by applying the obtained adhesive tape to the above evaluation are shown in Table 1.

[表1]
[產業上之可利用性]
[Table 1]
[Industrial availability]

本發明之半導體保護用黏著帶可適合地用於例如真空步驟(例如半導體製造中之真空步驟)中之半導體保護(例如凸塊面之保護)。The adhesive tape for semiconductor protection of this invention can be used suitably for semiconductor protection (for example, protection of a bump surface) in a vacuum step (for example, the vacuum step in semiconductor manufacturing).

10‧‧‧基材10‧‧‧ Substrate

20‧‧‧中間層 20‧‧‧ middle layer

30‧‧‧黏著劑層 30‧‧‧ Adhesive layer

100‧‧‧半導體保護用黏著帶 100‧‧‧ Adhesive tape for semiconductor protection

圖1為本發明之一個實施形態之半導體保護用黏著帶之概略剖視圖FIG. 1 is a schematic sectional view of an adhesive tape for semiconductor protection according to an embodiment of the present invention.

Claims (7)

一種半導體保護用黏著帶,其具備:基材、配置於該基材之至少單側之黏著劑層、以及配置於該基材與該黏著劑層之間之中間層, 該黏著劑層包括包含(甲基)丙烯酸系聚合物之活性能量線硬化型黏著劑, 該黏著劑層之厚度為1 μm~50 μm, 該中間層包含UV聚合(甲基)丙烯酸系聚合物, 該中間層之厚度為50 μm~1000 μm。An adhesive tape for semiconductor protection includes a substrate, an adhesive layer disposed on at least one side of the substrate, and an intermediate layer disposed between the substrate and the adhesive layer, The adhesive layer includes an active energy ray-curable adhesive containing a (meth) acrylic polymer, The thickness of the adhesive layer is 1 μm to 50 μm. The intermediate layer contains a UV polymerized (meth) acrylic polymer, The thickness of the intermediate layer is 50 μm to 1000 μm. 如請求項1之半導體保護用黏著帶,其於150℃之空氣中放置1小時之時,源自勞動安全衛生法之有機溶劑預防規則之第1種有機溶劑、第2種有機溶劑或第3種有機溶劑之釋氣總量為25 ppm以下。For example, when the adhesive tape for semiconductor protection of claim 1 is left in the air at 150 ° C for 1 hour, the first organic solvent, the second organic solvent, or the third organic solvent derived from the organic solvent prevention rule of the Labor Safety and Health Law. The total outgas of these organic solvents is less than 25 ppm. 如請求項1或2之半導體保護用黏著帶,其中利用熱機械分析(TMA)並將壓入深度設為上述黏著劑層之20%、將直徑0.5 mm之探針壓入該黏著劑層而測定負荷值時,自測定開始起1秒後~300秒後之負荷之變化量(μN/(mm2 ・秒))為1900 μN/(mm2 ・秒)以下。For example, the adhesive tape for semiconductor protection of claim 1 or 2, wherein the thermomechanical analysis (TMA) is used and the pressing depth is set to 20% of the above adhesive layer, and a 0.5 mm diameter probe is pressed into the adhesive layer, When measuring the load value, the amount of change in load (μN / (mm 2 · second)) from 1 second to 300 seconds from the start of measurement is 1900 μN / (mm 2 · second) or less. 如請求項1或2之半導體保護用黏著帶,其中上述基材包含熱塑性樹脂。The adhesive tape for semiconductor protection according to claim 1 or 2, wherein the substrate comprises a thermoplastic resin. 如請求項3之半導體保護用黏著帶,其中上述基材包含熱塑性樹脂。The adhesive tape for semiconductor protection according to claim 3, wherein the substrate comprises a thermoplastic resin. 如請求項1或2之半導體保護用黏著帶,其中上述基材包含聚酯系樹脂。The adhesive tape for semiconductor protection according to claim 1 or 2, wherein the substrate comprises a polyester resin. 如請求項3之半導體保護用黏著帶,其中上述基材包含聚酯系樹脂。The adhesive tape for semiconductor protection according to claim 3, wherein the substrate comprises a polyester resin.
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