TW201936274A - Substrate processing method and substrate processing apparatus - Google Patents
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Abstract
一種基板處理方法,其係對在表面露出有氧化矽膜與氮化矽膜的基板供給包含有矽的磷酸水溶液,而選擇性地蝕刻氮化矽膜。該方法係包含有如下之步驟:將包含有規定矽濃度範圍之矽的磷酸水溶液貯存於槽的步驟;將槽內之磷酸水溶液供給至噴嘴,自噴嘴將磷酸水溶液供給至基板而進行處理基板的步驟;將用於基板之處理所被使用的磷酸水溶液回收至槽的回收步驟;將在第1濃度包含有矽的第1磷酸水溶液供給至槽的第1磷酸水溶液供給步驟;將在較第1濃度低之第2濃度包含有矽的第2磷酸水溶液供給至槽的第2磷酸水溶液供給步驟;當既定之補充開始條件被滿足時,開始第1及第2磷酸水溶液供給步驟的開始判定步驟;及決定第1及第2磷酸水溶液之供給量的供給量決定步驟。 A substrate processing method for selectively etching a tantalum nitride film by supplying a phosphoric acid aqueous solution containing germanium to a substrate having a hafnium oxide film and a tantalum nitride film exposed on the surface thereof. The method includes the steps of: storing a phosphoric acid aqueous solution containing a ruthenium having a predetermined ruthenium concentration range in a tank; supplying an aqueous phosphoric acid solution in the tank to the nozzle, and supplying the phosphoric acid aqueous solution to the substrate from the nozzle to process the substrate a step of recovering the aqueous solution of phosphoric acid used for the treatment of the substrate into the tank; a step of supplying the first aqueous solution of phosphoric acid containing the first aqueous solution of phosphoric acid containing the ruthenium to the tank; The second concentration having a low concentration includes a second phosphoric acid aqueous solution supply step in which the second aqueous phosphoric acid aqueous solution is supplied to the tank; and when the predetermined supplementary start condition is satisfied, the first determination step of the first and second aqueous phosphoric acid aqueous solution supply steps is started; And a supply amount determining step of determining the supply amount of the first and second phosphoric acid aqueous solutions.
Description
本申請案係根據2017年11月15日提出之日本專利申請2017-220075號而主張優先權,該申請案之全部內容係藉由引用而被組入於本文中。 Priority is claimed on Japanese Patent Application No. Hei. No. Hei. No. Hei. No. Hei.
本發明係關於用以處理基板之方法及裝置。作為處理對象的基板係例如包含有半導體晶圓、液晶顯示裝置用及有機EL(Electroluminescence,電致發光)顯示裝置等之FPD(Flat Panel Display,平板顯示器)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽電池用基板等之基板。 The present invention relates to a method and apparatus for processing a substrate. The substrate to be processed includes, for example, a substrate for a FPD (Flat Panel Display) such as a semiconductor wafer, a liquid crystal display device, or an organic EL (Electroluminescence) display device, a substrate for a disk, and a disk. A substrate such as a substrate, a magneto-optical substrate, a photomask substrate, a ceramic substrate, or a solar cell substrate.
在半導體裝置或液晶顯示裝置之製造步驟中,使用處理基板之基板處理裝置。下述專利文獻1係揭示一種基板處理裝置及基板處理方法,其係對形成有氧化矽膜及氮化矽膜的基板供給包含有矽的磷酸水溶液,而對氮化矽膜進行選擇蝕刻。藉由於磷酸水溶液中包含有矽,而抑制氧化矽膜之蝕刻,藉此達成選擇性高之氮化矽膜蝕刻。 In the manufacturing steps of a semiconductor device or a liquid crystal display device, a substrate processing device for processing a substrate is used. Patent Document 1 discloses a substrate processing apparatus and a substrate processing method for supplying a phosphoric acid aqueous solution containing germanium to a substrate on which a hafnium oxide film and a tantalum nitride film are formed, and selectively etching the tantalum nitride film. The tantalum nitride film is etched by suppressing the etching of the hafnium oxide film by containing antimony in the aqueous phosphoric acid solution.
專利文獻1所記載之基板處理裝置係包含有保持基板而旋轉的旋轉夾頭、分別貯存磷酸水溶液的第1~第3槽、及新液供給裝置。自第1槽朝處理液噴嘴供給磷酸水溶液,自處理液噴嘴 所被吐出的磷酸水溶液被供給至被旋轉夾頭所保持的基板。當藉由磷酸水溶液之供給而使第1槽之液位下降,則自第2槽朝第1槽供給磷酸水溶液。另一方面,被供給至基板之後的使用完畢磷酸水溶液係被回收至第3槽。藉由磷酸濃度計而檢測該被回收之磷酸水溶液中之磷酸濃度。根據該檢測結果,對第3槽執行利用磷酸、DIW(去離子水)或氮氣之供給而所進行的磷酸濃度調整動作。當停止回收動作,藉由矽濃度計而檢測被回收之磷酸水溶液中之矽濃度。新液供給裝置係將磷酸水溶液補充至第3槽,藉此,將第3回收槽中之磷酸水溶液之矽濃度調整為基準矽濃度。更具體而言,新液供給裝置係配合矽濃度計之檢測結果而對可變更設定矽濃度的新液(未使用之磷酸水溶液)進行調整,而將該新液供給至第3槽。當第2槽之液位降低至下限位準為止,則以交換第2槽與第3槽之任務之方式切換液體路徑,並重複同樣之動作。 The substrate processing apparatus described in Patent Document 1 includes a rotary chuck that holds a substrate and rotates, first to third tanks that store phosphoric acid aqueous solution, and a new liquid supply device. Supplying phosphoric acid aqueous solution from the first tank toward the treatment liquid nozzle, from the treatment liquid nozzle The aqueous phosphoric acid solution to be discharged is supplied to the substrate held by the rotary chuck. When the liquid level of the first tank is lowered by the supply of the phosphoric acid aqueous solution, the phosphoric acid aqueous solution is supplied from the second tank to the first tank. On the other hand, the used phosphoric acid aqueous solution after being supplied to the substrate is recovered to the third tank. The concentration of phosphoric acid in the recovered aqueous phosphoric acid solution was measured by a phosphoric acid concentration meter. Based on the detection result, the phosphoric acid concentration adjustment operation by the supply of phosphoric acid, DIW (deionized water) or nitrogen gas is performed in the third tank. When the recovery operation is stopped, the concentration of rhodium in the recovered aqueous phosphoric acid solution is detected by a helium concentration meter. The new liquid supply device adjusts the ruthenium concentration of the phosphoric acid aqueous solution in the third recovery tank to the reference ruthenium concentration by adding the phosphoric acid aqueous solution to the third tank. More specifically, the new liquid supply device adjusts the detection result of the helium concentration meter to adjust the new liquid (unused phosphoric acid aqueous solution) whose concentration can be changed, and supplies the new liquid to the third tank. When the liquid level of the second tank is lowered to the lower limit level, the liquid path is switched so as to exchange the tasks of the second tank and the third tank, and the same operation is repeated.
[專利文獻1]日本專利特開2015-177139號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2015-177139
新液供給裝置係配合被回收之磷酸水溶液中之矽濃度而可變更設定應補充之新液的矽濃度。因此,每當補充時需要調製濃度不同之新液。新液供給裝置係具有矽濃度計,一面利用該矽濃度計檢測矽濃度,一面導入磷酸水溶液(原液)及矽濃縮液而加以混合。藉由新液之導入,而混合液被攪亂,因而,據此矽濃度計之 測定結果被攪亂。而在混合液中之矽濃度成為均勻並穩定為止,需要相當之時間,因此於新液之調製上則花費時間。 The new liquid supply device can change the concentration of ruthenium in the new liquid to be replenished in accordance with the concentration of ruthenium in the recovered phosphoric acid aqueous solution. Therefore, it is necessary to prepare a new liquid having a different concentration each time it is replenished. The new liquid supply device has a krypton concentration meter, and the cesium concentration is measured by the krypton concentration meter, and a phosphoric acid aqueous solution (stock solution) and a hydrazine concentrate are introduced and mixed. By the introduction of the new liquid, the mixed liquid is disturbed, and accordingly, according to the concentration of the liquid The measurement results were disturbed. On the other hand, it takes a considerable time for the concentration of ruthenium in the mixed solution to be uniform and stable, so that it takes time to prepare the new liquid.
而且,由於在停止朝第3槽的液回收而測量矽濃度,並據此而設定新液之矽濃度之後才調製新液,因而無法預先調製新液。因此,即便於供給基準濃度之新液即為足夠之時,仍會產生用於新液調製之待機時間。若因該待機時間而使朝第1槽的液補充產生停滯,則對基板處理之生產性造成影響。 Further, since the enthalpy concentration is measured by stopping the liquid recovery in the third tank, and the enthalpy concentration of the new liquid is set accordingly, the new liquid is prepared, so that the new liquid cannot be prepared in advance. Therefore, even when a new liquid supplied to the reference concentration is sufficient, the standby time for the new liquid preparation is generated. If the liquid supply to the first tank is stagnated due to the standby time, the productivity of the substrate processing is affected.
此外,由於於第2槽、第3槽及新液供給裝置需要具備有矽濃度計,因而裝置構成複雜,據此而使成本變高。 Further, since the second tank, the third tank, and the new liquid supply device are required to have a helium concentration meter, the apparatus configuration is complicated, and the cost is increased accordingly.
於此,本發明之一實施形態係提供一種基板處理方法及基板處理裝置,其可不損及基板處理之生產性,且以廉價之構成使被供給至基板的磷酸水溶液中之矽濃度產生穩定化。 According to an embodiment of the present invention, there is provided a substrate processing method and a substrate processing apparatus capable of stabilizing a germanium concentration in an aqueous phosphoric acid solution supplied to a substrate without impairing productivity of substrate processing. .
本發明之一實施形態係提供一種基板處理方法,其係對在表面露出有氧化矽膜與氮化矽膜的基板供給包含有矽的磷酸水溶液,而選擇性地蝕刻上述氮化矽膜。本發明之一實施形態之方法係包含有如下之步驟:將包含有規定矽濃度範圍之矽的磷酸水溶液貯存於槽的步驟;將上述槽內之磷酸水溶液供給至噴嘴,自上述噴嘴將磷酸水溶液供給至基板而進行基板處理的步驟;將自上述噴嘴被供給至基板而用於基板處理所被使用的磷酸水溶液回收至上述槽的回收步驟;將在第1濃度包含有矽的第1磷酸水溶液供給至上述槽的第1磷酸水溶液供給步驟;將在較上述第1濃度低之第2濃度包含有矽的第2磷酸水溶液供給至上述槽的第2磷酸水溶液供給步驟;當既定之補充開始條件被滿足時,開始上述第1磷酸水溶 液供給步驟及上述第2磷酸水溶液供給步驟的開始判定步驟;及決定在上述第1磷酸水溶液供給步驟中之上述第1磷酸水溶液及在上述第2磷酸水溶液供給步驟中之上述第2磷酸水溶液之供給量的供給量決定步驟。 According to an embodiment of the present invention, there is provided a substrate processing method for selectively etching the tantalum nitride film by supplying a phosphoric acid aqueous solution containing germanium to a substrate having a hafnium oxide film and a tantalum nitride film exposed on a surface thereof. A method according to an embodiment of the present invention includes the steps of: storing a phosphoric acid aqueous solution containing a ruthenium having a predetermined ruthenium concentration range in a tank; supplying an aqueous phosphoric acid solution in the tank to a nozzle, and applying an aqueous phosphoric acid solution from the nozzle a step of performing substrate processing by supplying the substrate to the substrate; a recovery step of recovering the phosphoric acid aqueous solution used for substrate processing from the nozzle to the substrate; and collecting the first aqueous phosphoric acid solution containing ruthenium at the first concentration a first phosphoric acid aqueous solution supply step supplied to the tank; a second phosphoric acid aqueous solution supply step of supplying a second aqueous phosphoric acid solution having a second concentration lower than the first concentration to the tank; and a predetermined supplementary start condition When it is satisfied, start the above first phosphate water soluble a liquid supply step and a start determination step of the second phosphoric acid aqueous solution supply step; and determining the first phosphoric acid aqueous solution in the first phosphoric acid aqueous solution supply step and the second phosphoric acid aqueous solution in the second phosphoric acid aqueous solution supply step The supply amount of the supply amount determines the step.
該方法係使用磷酸水溶液而進行處理基板,藉此選擇性地蝕刻在基板表面所露出之氮化矽膜。藉由將在磷酸水溶液中所包含之矽之濃度控制在規定矽濃度範圍,而可抑制在基板表面所露出之氧化矽膜之蝕刻,藉此可提高氮化矽膜之選擇比。 In this method, a substrate is treated with an aqueous phosphoric acid solution to selectively etch a tantalum nitride film exposed on the surface of the substrate. By controlling the concentration of ruthenium contained in the phosphoric acid aqueous solution to a predetermined ruthenium concentration range, etching of the ruthenium oxide film exposed on the surface of the substrate can be suppressed, whereby the selection ratio of the tantalum nitride film can be improved.
磷酸水溶液係自槽朝噴嘴被供給,而自噴嘴供給至基板。被使用在基板之處理的使用完畢磷酸水溶液係朝槽被回收。當既定之補充開始條件被滿足時,將在第1濃度包含有矽的第1磷酸水溶液及在第2濃度包含有矽的磷酸水溶液供給至槽。藉由適當地決定該等之第1及第2磷酸水溶液之各自的供給量,而可將槽內之磷酸水溶液之矽濃度控制在規定矽濃度範圍。 The aqueous phosphoric acid solution is supplied from the tank toward the nozzle and is supplied from the nozzle to the substrate. The used phosphoric acid aqueous solution used for the treatment of the substrate is recovered in the tank. When the predetermined supplementary start condition is satisfied, the first phosphoric acid aqueous solution containing ruthenium in the first concentration and the phosphoric acid aqueous solution containing ruthenium in the second concentration are supplied to the tank. By appropriately determining the supply amounts of the first and second phosphoric acid aqueous solutions, the concentration of the cesium phosphate in the tank can be controlled to a predetermined erbium concentration range.
第1磷酸水溶液及第2磷酸水溶液係各自在第1濃度及第2濃度包含有矽,只要該等之濃度值係各自為固定值即可,而不需要變更。這是因為,藉由適當地決定第1及第2磷酸水溶液之各供給量,而將第1磷酸水溶液、第2磷酸水溶液及槽內之磷酸水溶液混合,則可將規定矽濃度範圍之磷酸水溶液貯存於槽內。因此,預先準備第1磷酸水溶液及第2磷酸水溶液而於需要時僅以需要量供給至槽,藉此可調整槽內之磷酸水溶液之矽濃度。因而,可削減用於朝槽補充磷酸水溶液的等待時間,因此可不損及基板處理之生產性,而將穩定之矽濃度之磷酸水溶液供給至基板。 Each of the first aqueous solution and the second aqueous phosphoric acid solution contains ruthenium in the first concentration and the second concentration, and the concentration values are each a fixed value, and need not be changed. This is because, by appropriately determining the respective supply amounts of the first and second phosphoric acid aqueous solutions, the first phosphoric acid aqueous solution, the second phosphoric acid aqueous solution, and the aqueous phosphoric acid solution in the tank are mixed, whereby the phosphoric acid aqueous solution having a predetermined concentration range can be obtained. Store in the tank. Therefore, the first aqueous phosphoric acid solution and the second aqueous phosphoric acid aqueous solution are prepared in advance, and when necessary, they are supplied to the tank only in a required amount, whereby the concentration of the phosphoric acid aqueous solution in the tank can be adjusted. Therefore, since the waiting time for adding the phosphoric acid aqueous solution to the tank can be reduced, the stable aqueous solution of phosphoric acid can be supplied to the substrate without impairing the productivity of the substrate treatment.
而且,只要預先準備各自在第1濃度及第2濃度包含 有矽的第1及第2磷酸水溶液即可,因此不需要構成為即時控制第1磷酸水溶液及第2磷酸水溶液之矽濃度。例如,分別定量混合不包含有矽的磷酸水溶液之原液、及在既定濃度包含有矽的矽濃縮液,藉此可調製第1或第2濃度之磷酸水溶液。當然,亦可配合需要而藉由矽濃度計而進行濃度之確認,但矽濃度計並非必須之構成。因此,可以廉價之構成而將穩定之矽濃度之磷酸水溶液供給至基板。 Furthermore, as long as it is prepared in advance, each of the first concentration and the second concentration includes Since the first and second aqueous phosphoric acid solutions may be used, it is not necessary to control the concentration of the first aqueous phosphoric acid solution and the second aqueous phosphoric acid solution. For example, a first- or second-concentration phosphoric acid aqueous solution can be prepared by quantitatively mixing a stock solution containing no hydrazine aqueous solution and a hydrazine concentrate containing hydrazine at a predetermined concentration. Of course, the concentration can be confirmed by the concentration meter in accordance with the need, but the concentration meter is not essential. Therefore, it is possible to supply a stable aqueous solution of phosphoric acid having a stable concentration to the substrate at a low cost.
在本發明之一實施形態中,上述第1濃度為上述規定矽濃度範圍內之值。根據該方法,由於第1濃度為規定矽濃度範圍內之值,因此,藉由供給第1磷酸水溶液,而可容易地將槽內之磷酸水溶液之矽濃度導向至規定矽濃度範圍內之值。 In one embodiment of the present invention, the first concentration is a value within the predetermined enthalpy concentration range. According to this method, since the first concentration is a value within a predetermined erbium concentration range, the cesium concentration of the phosphoric acid aqueous solution in the tank can be easily guided to a value within a predetermined erbium concentration range by supplying the first phosphoric acid aqueous solution.
亦可為,上述第1濃度為上述規定矽濃度範圍內之基準矽濃度(用於基板處理之最佳矽濃度值)。 The first concentration may be a reference enthalpy concentration (the optimum erbium concentration value for substrate processing) within the predetermined erbium concentration range.
在本發明之一實施形態中,上述第2濃度為較上述規定矽濃度範圍低之值。根據該方法,由於第2濃度為較規定矽濃度範圍低之值,因此,藉由供給第2磷酸水溶液,而可容易地將槽內之磷酸水溶液之矽濃度導向至規定矽濃度範圍內之值。特別是,於基板包含有矽之情況下,藉由將磷酸水溶液供給至基板,而基板材料之矽溶出至磷酸水溶液中,因此,被回收至槽的磷酸水溶液之濃度係變得較供給至基板前更高。於此,藉由供給在較規定矽濃度範圍低之第2濃度包含有矽的第2磷酸水溶液,而可容易地將槽內之磷酸水溶液之矽濃度導向至規定矽濃度範圍。 In one embodiment of the present invention, the second concentration is a value lower than the predetermined erbium concentration range. According to this method, since the second concentration is a value lower than the predetermined erbium concentration range, the cesium concentration of the phosphoric acid aqueous solution in the tank can be easily guided to a value within a predetermined erbium concentration range by supplying the second phosphoric acid aqueous solution. . In particular, when the substrate contains ruthenium, the phosphoric acid aqueous solution is supplied to the substrate, and the ruthenium of the substrate material is eluted into the phosphoric acid aqueous solution. Therefore, the concentration of the phosphoric acid aqueous solution recovered in the tank becomes higher than that supplied to the substrate. Before the higher. Here, by supplying the second phosphoric acid aqueous solution containing ruthenium in the second concentration lower than the predetermined ruthenium concentration range, the ruthenium concentration of the phosphoric acid aqueous solution in the tank can be easily guided to the predetermined ruthenium concentration range.
在本發明之一實施形態中,上述第2濃度為零。即,在本實施形態中,第2磷酸水溶液為不包含有矽的磷酸水溶液。藉 由將如此般之第2磷酸水溶液供給至槽,而可容易地將槽內之磷酸水溶液之矽濃度導向至規定矽濃度範圍。 In an embodiment of the invention, the second concentration is zero. That is, in the present embodiment, the second phosphoric acid aqueous solution is an aqueous phosphoric acid solution containing no ruthenium. borrow By supplying such a second aqueous phosphoric acid solution to the tank, the rhodium concentration of the phosphoric acid aqueous solution in the tank can be easily guided to a predetermined rhodium concentration range.
在本發明之一實施形態中,於上述供給量決定步驟中,以將上述槽內之磷酸水溶液中之矽濃度調整為預先決定之基準矽濃度之方式,決定上述第1及第2磷酸水溶液的供給量。藉由該方法,將第1及第2磷酸水溶液分別以適當地決定之供給量供給至槽,藉此使第1及第2磷酸水溶液與被回收至槽內的磷酸水溶液混合,而可將槽內之磷酸水溶液之矽濃度導向至基準矽濃度。 In one embodiment of the present invention, in the supply amount determining step, the first and second phosphoric acid aqueous solutions are determined such that the concentration of rhodium in the phosphoric acid aqueous solution in the tank is adjusted to a predetermined reference rhodium concentration. Supply amount. According to this method, the first and second phosphoric acid aqueous solutions are supplied to the tank in an appropriately determined supply amount, whereby the first and second phosphoric acid aqueous solutions are mixed with the phosphoric acid aqueous solution recovered in the tank, and the tank can be mixed. The ruthenium concentration of the aqueous phosphoric acid solution is directed to the reference ruthenium concentration.
在本發明之一實施形態中,於上述供給量決定步驟中,將上述槽內之磷酸水溶液中之矽濃度之調整目標值設為上述第1濃度,而決定上述第1及第2磷酸水溶液的供給量。 In the above-described supply amount determining step, the first and second phosphoric acid aqueous solutions are determined by setting the target value of the cerium concentration in the phosphoric acid aqueous solution in the tank to the first concentration. Supply amount.
在該方法中,將第1濃度設為調整目標值,而決定第1及第2磷酸水溶液之供給量,藉此使第1及第2磷酸水溶液與被回收至槽內的磷酸水溶液混合,而將槽內之磷酸水溶液之矽濃度導向至第1濃度。 In this method, the first concentration and the second phosphoric acid aqueous solution are determined by setting the first concentration as the adjustment target value, thereby mixing the first and second phosphoric acid aqueous solutions with the phosphoric acid aqueous solution recovered in the tank. The cesium concentration of the aqueous phosphoric acid solution in the tank was directed to the first concentration.
例如,若將第1濃度設為與基準矽濃度相等,則可將槽內之磷酸水溶液之矽濃度調整為基準矽濃度。於此情況下,最初將磷酸水溶液貯存於槽時,只要僅將第1磷酸水溶液供給至槽即可。藉此,不用經過用以謀求濃度之均勻化的待機時間,而可直接迅速地將貯存在槽內的磷酸水溶液用於基板之處理而使用。 For example, when the first concentration is made equal to the reference enthalpy concentration, the cerium concentration of the phosphoric acid aqueous solution in the tank can be adjusted to the reference enthalpy concentration. In this case, when the aqueous phosphoric acid solution is first stored in the tank, only the first phosphoric acid aqueous solution may be supplied to the tank. Thereby, the phosphoric acid aqueous solution stored in the tank can be directly and quickly used for the treatment of the substrate without using a standby time for achieving uniformization of the concentration.
在本發明之一實施形態中,於上述供給量決定步驟中,基於上述基板之種類而決定上述第1及第2磷酸水溶液的供給量。基於基板之種類而可預測基板處理前後之磷酸水溶液中之矽濃度之變動。於此,基於基板之種類而決定第1及第2磷酸水溶液之 供給量,藉此可適當地調整槽內之磷酸水溶液之矽濃度。 In one embodiment of the present invention, in the supply amount determining step, the supply amount of the first and second phosphoric acid aqueous solutions is determined based on the type of the substrate. The variation in the concentration of ruthenium in the aqueous phosphoric acid solution before and after the substrate treatment can be predicted based on the type of the substrate. Here, the first and second aqueous phosphoric acid solutions are determined based on the type of the substrate. The amount of supply can thereby appropriately adjust the ruthenium concentration of the aqueous phosphoric acid solution in the tank.
所謂基板之種類係表示基板之材料、形成在基板表面的膜之種類、形成在基板表面的圖案之種類、其他、對在磷酸水溶液之使用前後的矽濃度之變動所具有影響的基板屬性。 The type of the substrate refers to the material of the substrate, the type of the film formed on the surface of the substrate, the type of the pattern formed on the surface of the substrate, and other properties of the substrate which have an influence on the fluctuation of the germanium concentration before and after the use of the phosphoric acid aqueous solution.
在本發明之一實施形態中,於上述供給量決定步驟中,基於藉由自上述噴嘴所被供給之磷酸水溶液而自上述基板溶出至該磷酸水溶液中的矽之量,決定上述第1及第2磷酸水溶液的供給量。於藉由利用磷酸水溶液所進行之處理而矽自基板溶出之情況下,該溶出量係對被回收之磷酸水溶液中之矽濃度造成影響。於此,基於自基板所溶出之矽之量而決定第1及第2磷酸水溶液之供給量,藉此可適當地調整槽內之磷酸水溶液之矽濃度。 In one embodiment of the present invention, in the supply amount determining step, the first and the first are determined based on the amount of cerium eluted from the substrate into the phosphoric acid aqueous solution by the phosphoric acid aqueous solution supplied from the nozzle. The amount of supply of 2 aqueous phosphoric acid solution. In the case where the substrate is eluted by treatment with an aqueous phosphoric acid solution, the amount of elution affects the concentration of rhodium in the recovered aqueous phosphoric acid solution. Here, the supply amount of the first and second phosphoric acid aqueous solutions is determined based on the amount of ruthenium eluted from the substrate, whereby the ruthenium concentration of the phosphoric acid aqueous solution in the tank can be appropriately adjusted.
在本發明之一實施形態中,於上述供給量決定步驟中,基於自上述噴嘴被供給至基板的磷酸水溶液中被回收至上述槽的磷酸水溶液之回收率,決定上述第1及第2磷酸水溶液的供給量。用於處理基板而自噴嘴所被吐出之磷酸水溶液並非全部被回收至槽,例如,隨著淋洗處理等而一部分被廢棄。於此,基於磷酸水溶液之回收率而決定第1及第2磷酸水溶液之供給量,藉此可一面將需要量之磷酸水溶液補充至槽,一面將槽內之磷酸水溶液之矽濃度調整至規定矽濃度範圍。 In one embodiment of the present invention, in the supply amount determining step, the first and second phosphoric acid aqueous solutions are determined based on the recovery rate of the phosphoric acid aqueous solution recovered in the tank from the phosphoric acid aqueous solution supplied to the substrate from the nozzle. The amount of supply. Not all of the phosphoric acid aqueous solution discharged from the nozzle for processing the substrate is recovered to the tank, and is partially discarded, for example, with a rinsing treatment or the like. Here, the supply amount of the first and second phosphoric acid aqueous solutions is determined based on the recovery rate of the phosphoric acid aqueous solution, whereby the concentration of the phosphoric acid aqueous solution in the tank can be adjusted to a predetermined level while the required amount of the phosphoric acid aqueous solution is replenished to the tank. Concentration range.
在本發明之一實施形態中,於上述供給量決定步驟中,基於藉由自上述噴嘴所被供給之磷酸水溶液而被處理的基板之片數,決定上述第1及第2磷酸水溶液的供給量。基板之處理片數越多,即磷酸水溶液於基板處理中被使用之次數越多,則槽內之磷酸水溶液中之矽濃度係越遠離基準矽濃度。於此,基於被處理的基 板之片數而決定第1及第2磷酸水溶液之供給量,藉此可適當地調整槽內之磷酸水溶液之矽濃度。 In one embodiment of the present invention, in the supply amount determining step, the supply amount of the first and second phosphoric acid aqueous solutions is determined based on the number of substrates processed by the phosphoric acid aqueous solution supplied from the nozzle. . The greater the number of processed substrates, that is, the greater the number of times the phosphoric acid aqueous solution is used in the substrate treatment, the greater the concentration of ruthenium in the aqueous phosphoric acid solution in the bath is from the reference ruthenium concentration. Here, based on the processed base The amount of the first and second aqueous phosphoric acid solutions is determined by the number of sheets, whereby the concentration of the phosphoric acid aqueous solution in the tank can be appropriately adjusted.
所謂被處理的基板之片數,於此情況下係指不藉由第1及第2磷酸水溶液之供給所進行之矽濃度之調整而被處理的基板之片數。 The number of substrates to be processed refers to the number of substrates to be processed without adjustment of the germanium concentration by the supply of the first and second phosphoric acid aqueous solutions.
在本發明之一實施形態中,上述補充開始條件係包含與被貯存在上述槽的液量相關的液量條件。在本實施形態中,將與被貯存在槽的液量相關的液量條件作為觸發條件,而供給第1及第2磷酸水溶液。具體而言,亦可將槽內之液量減少至既定之下限液量為止之情形作為液量條件。藉此,當槽內之液量減少至下限液量為止時,補充第1及第2磷酸水溶液,同時地矽濃度被調整。 In an embodiment of the present invention, the supplementary start condition includes a liquid amount condition related to a liquid amount stored in the tank. In the present embodiment, the first and second phosphoric acid aqueous solutions are supplied as a trigger condition in accordance with the liquid amount condition relating to the amount of liquid stored in the tank. Specifically, the liquid amount can be reduced by reducing the amount of liquid in the tank to a predetermined lower limit liquid amount. Thereby, when the amount of liquid in the tank is reduced to the lower limit liquid amount, the first and second phosphoric acid aqueous solutions are replenished, and the rhodium concentration is adjusted.
在本發明之一實施形態中,上述補充開始條件係包含與藉由自上述噴嘴所被供給之磷酸水溶液而被處理的基板之片數相關的處理數條件。在本實施形態中,將與被處理的基板之片數相關的處理數條件作為觸發條件,而供給第1及第2磷酸水溶液。基板之處理片數越多,即磷酸水溶液於基板處理中被使用之次數越多,則槽內之磷酸水溶液中之矽濃度係越遠離基準矽濃度。於此,例如將處理片數達到至既定值之情形作為觸發條件而供給第1及第2磷酸水溶液,並調整槽內之磷酸水溶液之矽濃度。藉此,可利用穩定之矽濃度之磷酸水溶液進行處理基板。 In one embodiment of the present invention, the supplementary start condition includes a number of processing conditions relating to the number of substrates processed by the aqueous phosphoric acid solution supplied from the nozzle. In the present embodiment, the first and second phosphoric acid aqueous solutions are supplied under the condition that the number of processes relating to the number of substrates to be processed is used as a trigger condition. The greater the number of processed substrates, that is, the greater the number of times the phosphoric acid aqueous solution is used in the substrate treatment, the greater the concentration of ruthenium in the aqueous phosphoric acid solution in the bath is from the reference ruthenium concentration. Here, for example, when the number of processed sheets reaches a predetermined value, the first and second aqueous phosphoric acid solutions are supplied as trigger conditions, and the erbium concentration of the phosphoric acid aqueous solution in the tank is adjusted. Thereby, the substrate can be treated with a stable aqueous solution of phosphoric acid.
在本發明之一實施形態中,上述補充開始條件係包含與自上述槽朝向上述噴嘴而所被供給之磷酸水溶液中之矽濃度相關的矽濃度條件。在該方法中,將與自槽朝向噴嘴而所被供給之磷酸水溶液中之矽濃度相關的矽濃度條件作為觸發條件,而供給第1 及第2磷酸水溶液。更具體而言,亦可為,當被供給至基板的磷酸水溶液中之矽濃度係自基準值偏離既定值以上時,則將第1及第2磷酸水溶液供給至槽而進行矽濃度之調整。藉此,可利用穩定之矽濃度之磷酸水溶液進行處理基板。 In one embodiment of the present invention, the supplementary start condition includes a erbium concentration condition relating to a ruthenium concentration in an aqueous phosphoric acid solution supplied from the groove toward the nozzle. In this method, the enthalpy concentration condition relating to the ruthenium concentration in the aqueous phosphoric acid solution supplied from the tank toward the nozzle is used as a trigger condition, and the first condition is supplied. And a second aqueous phosphoric acid solution. More specifically, when the ruthenium concentration in the phosphoric acid aqueous solution supplied to the substrate deviates from the reference value by a predetermined value or more, the first and second phosphoric acid aqueous solutions are supplied to the tank to adjust the ruthenium concentration. Thereby, the substrate can be treated with a stable aqueous solution of phosphoric acid.
在本發明之一實施形態中,上述方法係進而包含有水平地保持上述基板的基板保持步驟,自上述噴嘴將上述磷酸水溶液供給至在上述基板保持步驟中所被保持之基板之表面。在該方法中,將基板保持為水平,而自噴嘴將磷酸水溶液供給至該基板之表面。例如,利用基板保持器水平地保持1片基板,朝向該基板之表面而自噴嘴吐出磷酸水溶液。如此,於所謂之單片型之處理中,正確地調整自噴嘴所被吐出之磷酸水溶液中之矽濃度係屬重要。當矽濃度之調整為不充分時,則存在有在被處理之複數片基板之間處理品質不均之虞。為了基板處理之均勻化,因而較佳為於供給磷酸水溶液時,並行地實施使被基板保持器所保持之基板產生旋轉的基板旋轉步驟。 In one embodiment of the present invention, the method further includes a substrate holding step of holding the substrate horizontally, and supplying the phosphoric acid aqueous solution from the nozzle to a surface of the substrate held in the substrate holding step. In this method, the substrate is held horizontal, and an aqueous phosphoric acid solution is supplied from the nozzle to the surface of the substrate. For example, one substrate is horizontally held by a substrate holder, and an aqueous phosphoric acid solution is discharged from a nozzle toward the surface of the substrate. Thus, in the so-called monolithic type process, it is important to accurately adjust the concentration of ruthenium in the aqueous phosphoric acid solution discharged from the nozzle. When the adjustment of the ruthenium concentration is insufficient, there is a problem that the processing quality is uneven between the plurality of substrates to be processed. In order to uniformize the substrate processing, it is preferable to perform a substrate rotation step of rotating the substrate held by the substrate holder in parallel when the phosphoric acid aqueous solution is supplied.
在本發明之一實施形態中,上述方法係進而包含有第3磷酸水溶液供給步驟,該第3磷酸水溶液供給步驟係將在與上述第1濃度及上述第2濃度之任一者皆不同之第3濃度包含有矽的第3磷酸水溶液供給至上述槽。 In one embodiment of the present invention, the method further includes a third aqueous phosphoric acid supply step of different from the first concentration and the second concentration. 3 A third aqueous solution of phosphoric acid containing rhodium is supplied to the above tank.
在該方法中,可將在第3濃度包含有矽的第3磷酸水溶液供給至槽。藉此,可使槽內之磷酸水溶液中之矽濃度之調整寬度變廣。亦可為,配合基板之種類而選擇性地使用第1磷酸水溶液與第3磷酸水溶液。 In this method, a third aqueous phosphoric acid solution containing ruthenium in the third concentration can be supplied to the tank. Thereby, the adjustment width of the ruthenium concentration in the aqueous phosphoric acid solution in the tank can be widened. The first aqueous phosphoric acid solution and the third aqueous phosphoric acid solution may be selectively used in combination with the type of the substrate.
在本發明之一實施形態中,於將上述磷酸水溶液貯存 在上述槽之步驟中,執行上述第3磷酸水溶液供給步驟。而且,上述第3濃度係較上述第1濃度高。例如,亦可為,於最初將磷酸水溶液貯存於槽時,將矽濃度較高之第3磷酸水溶液供給至槽。接著,亦可為,於將因處理基板而矽濃度增大的磷酸水溶液回收至槽後,在調整該磷酸水溶液中之矽濃度時,將濃度較低之第1磷酸水溶液供給至槽。 In an embodiment of the present invention, the aqueous phosphoric acid solution is stored In the step of the above-described tank, the third aqueous phosphoric acid solution supply step is carried out. Further, the third concentration is higher than the first concentration. For example, when the aqueous phosphoric acid solution is first stored in the tank, the third aqueous phosphoric acid solution having a high cerium concentration may be supplied to the tank. Then, after the phosphoric acid aqueous solution having an increased ruthenium concentration due to the treatment of the substrate is recovered in the tank, when the ruthenium concentration in the phosphoric acid aqueous solution is adjusted, the first aqueous phosphoric acid solution having a low concentration may be supplied to the tank.
在本發明之一實施形態中,上述槽包含:回收槽,其經由回收配管而被導入有用於基板處理所被使用的磷酸水溶液;及供給槽,其經由調合液供給配管而被供給有貯存在上述回收槽的磷酸水溶液;被貯存在上述供給槽之磷酸水溶液係經由供給配管而被供給至上述噴嘴,上述第1磷酸水溶液及上述第2磷酸水溶液係被供給至上述回收槽。 In one embodiment of the present invention, the tank includes a recovery tank into which a phosphoric acid aqueous solution used for substrate processing is introduced via a recovery pipe, and a supply tank that is supplied and stored via a mixing liquid supply pipe. The phosphoric acid aqueous solution in the recovery tank; the phosphoric acid aqueous solution stored in the supply tank is supplied to the nozzle through a supply pipe, and the first phosphoric acid aqueous solution and the second phosphoric acid aqueous solution are supplied to the recovery tank.
在該方法中,處理完畢之磷酸水溶液係經由回收配管而被導引至回收槽。接著,第1及第2磷酸水溶液係被供給至回收槽,在回收槽內調整磷酸水溶液中之矽濃度。矽濃度調整完畢之磷酸水溶液係自調合液供給配管朝供給槽輸送,而自供給槽朝處理液噴嘴進行供給。因此,供給槽內之磷酸水溶液中之矽濃度係不受液回收之影響,因此為穩定。藉此,可將更加穩定之矽濃度之磷酸水溶液自處理液噴嘴朝基板進行供給。 In this method, the treated aqueous phosphoric acid solution is guided to a recovery tank via a recovery pipe. Next, the first and second aqueous phosphoric acid solutions are supplied to a recovery tank, and the concentration of rhodium in the phosphoric acid aqueous solution is adjusted in the recovery tank. The phosphoric acid aqueous solution whose concentration has been adjusted is supplied from the mixing liquid supply pipe to the supply tank, and is supplied from the supply tank to the processing liquid nozzle. Therefore, the concentration of ruthenium in the aqueous phosphoric acid solution in the supply tank is not affected by the liquid recovery, and therefore is stable. Thereby, a more stable aqueous solution of phosphoric acid having a higher concentration can be supplied from the processing liquid nozzle to the substrate.
在本發明之一實施形態中,上述回收槽係設置有複數個。而且,上述方法係進而包含有:回收目的地選擇步驟,其自上述複數個回收槽中選擇經由上述回收配管而被回收之磷酸水溶液之回收目的地;供給目的地選擇步驟,其將上述第1磷酸水溶液及上述第2磷酸水溶液的供給目的地,選擇為在上述回收目的地選擇 步驟中所被選擇之回收槽;及補充來源選擇步驟,其選擇在上述複數個回收槽中於上述回收槽選擇步驟所未被選擇的回收槽,作為用以經由上述調合液供給配管而將磷酸水溶液補充至上述供給槽的補充來源。 In an embodiment of the present invention, the plurality of recovery tanks are provided. Furthermore, the method further includes a collection destination selection step of selecting a recovery destination of the phosphoric acid aqueous solution recovered through the recovery pipe from the plurality of recovery tanks, and a supply destination selection step of the first The supply destination of the phosphoric acid aqueous solution and the second phosphoric acid aqueous solution is selected to be selected at the above-mentioned recovery destination a recovery tank selected in the step; and a supplementary source selection step of selecting a recovery tank not selected in the recovery tank selection step in the plurality of recovery tanks as a phosphate for supplying the piping via the conditioning liquid The aqueous solution is replenished to a supplemental source of the above supply tank.
在該方法中,將使用完畢磷酸水溶液回收至自複數個回收槽中所被選擇之回收槽,而自未被選擇之回收槽將矽濃度調整完畢之磷酸水溶液供給至供給槽。藉此,可不停滯地進行磷酸水溶液朝供給槽之補充,因此,朝基板的磷酸水溶液之供給不停滯。藉此,可提高基板處理之生產性。此外,於磷酸水溶液之回收所使用之回收槽中,進行藉由第1及第2磷酸水溶液之供給而所進行矽濃度調整。因此,將磷酸水溶液供給至供給槽的回收槽內之磷酸水溶液中之矽濃度係穩定,因而可穩定地保持供給槽之磷酸水溶液中之矽濃度。藉此,於基板處理所使用之磷酸水溶液中之矽濃度係更加穩定。 In this method, the used phosphoric acid aqueous solution is recovered to a recovery tank selected from a plurality of recovery tanks, and the phosphoric acid aqueous solution whose concentration has been adjusted is supplied from the unselected recovery tank to the supply tank. Thereby, the phosphoric acid aqueous solution can be replenished to the supply tank without stagnation, so that the supply of the phosphoric acid aqueous solution to the substrate does not stagnate. Thereby, the productivity of the substrate processing can be improved. Further, in the recovery tank used for the recovery of the aqueous phosphoric acid solution, the concentration of the ruthenium was adjusted by the supply of the first and second aqueous phosphoric acid solutions. Therefore, the concentration of ruthenium in the aqueous phosphoric acid solution supplied to the recovery tank of the supply tank is stabilized, so that the ruthenium concentration in the phosphoric acid aqueous solution of the supply tank can be stably maintained. Thereby, the concentration of ruthenium in the aqueous phosphoric acid solution used for the substrate treatment is more stable.
在本發明之一實施形態中,進而包含有如下之步驟:使用第1積算流量計而管理在上述第1磷酸水溶液供給步驟中之上述第1磷酸水溶液之供給量的步驟;及使用第2積算流量計而管理在上述第2磷酸水溶液供給步驟中之上述第2磷酸水溶液之供給量的步驟。 In one embodiment of the present invention, the method further includes the step of managing the supply amount of the first phosphoric acid aqueous solution in the first phosphoric acid aqueous solution supply step using the first integrated flowmeter; and using the second integrated calculation The flow meter manages the supply amount of the second aqueous phosphoric acid solution in the second phosphoric acid aqueous solution supply step.
在該方法中,藉由使用積算流量計,而可正確地管理第1及第2磷酸水溶液之供給量。藉此,可正確地調整槽內之磷酸水溶液中之矽濃度。 In this method, the supply amount of the first and second phosphoric acid aqueous solutions can be accurately managed by using the integrated flow meter. Thereby, the concentration of ruthenium in the aqueous phosphoric acid solution in the tank can be accurately adjusted.
本發明之一實施形態係進而提供一種適於實施如上述般之基板處理方法之基板處理裝置。本發明之一實施形態之基板 處理裝置係包含有:基板保持手段,其保持在表面露出有氧化矽膜及氮化矽膜的基板;噴嘴,其將包含有矽的磷酸水溶液供給至被上述基板保持手段所保持的基板;槽,其將包含有規定矽濃度範圍之矽的磷酸水溶液供給至上述噴嘴;回收配管,其將自上述噴嘴被供給至基板而用於基板之處理所被使用的磷酸水溶液回收至上述槽;第1磷酸水溶液供給手段,其將在第1濃度包含有矽的第1磷酸水溶液供給至上述槽;第2磷酸水溶液供給手段,其將在較上述第1濃度低之第2濃度包含有矽的第2磷酸水溶液供給至上述槽;及控制手段,其執行磷酸水溶液供給步驟及供給量決定步驟;該磷酸水溶液供給步驟係當既定之補充開始條件被滿足時,藉由控制上述第1磷酸水溶液供給手段及上述第2磷酸水溶液供給手段而將上述第1磷酸水溶液及上述第2磷酸水溶液供給至上述槽;該供給量決定步驟係決定上述第1磷酸水溶液及第2磷酸水溶液之供給量。 An embodiment of the present invention further provides a substrate processing apparatus suitable for performing the substrate processing method as described above. Substrate according to an embodiment of the present invention The processing apparatus includes: a substrate holding means that holds a substrate on which a ruthenium oxide film and a tantalum nitride film are exposed; and a nozzle that supplies a phosphoric acid aqueous solution containing ruthenium to the substrate held by the substrate holding means; And supplying a phosphoric acid aqueous solution containing a ruthenium having a predetermined ruthenium concentration range to the nozzle; and collecting a pipe for recovering the phosphoric acid aqueous solution used for the substrate treatment from the nozzle to the substrate; The phosphoric acid aqueous solution supply means supplies the first phosphoric acid aqueous solution containing ruthenium in the first concentration to the tank, and the second phosphoric acid aqueous solution supply means includes the second concentration having a bismuth at the second concentration lower than the first concentration a phosphoric acid aqueous solution is supplied to the tank; and a control means performs a phosphoric acid aqueous solution supply step and a supply amount determining step; and the phosphoric acid aqueous solution supply step controls the first aqueous phosphoric acid aqueous solution supply means when a predetermined supplementary start condition is satisfied The second phosphoric acid aqueous solution supply means supplies the first phosphoric acid aqueous solution and the second phosphoric acid aqueous solution to the above ; The line feeding amount determination step determines the supply amount of the second aqueous solution of a phosphoric acid.
在本發明之一實施形態中,上述控制手段係於上述供給量決定步驟中,基於基板之種類、藉由自上述噴嘴所被供給之磷酸水溶液而自上述基板溶出至該磷酸水溶液的矽之量、自上述噴嘴被供給至基板的磷酸水溶液中之被回收至上述槽的磷酸水溶液之回收率、及藉由自上述噴嘴所被供給之磷酸水溶液而被處理的基板之片數之中之至少一者,而決定上述第1磷酸水溶液及上述第2磷酸水溶液的供給量。 In one embodiment of the present invention, the control means is the amount of ruthenium eluted from the substrate to the phosphoric acid aqueous solution by the type of the substrate and the phosphoric acid aqueous solution supplied from the nozzle in the supply amount determining step. At least one of a recovery rate of the phosphoric acid aqueous solution recovered into the tank from the phosphoric acid aqueous solution supplied to the substrate from the nozzle, and a number of substrates processed by the phosphoric acid aqueous solution supplied from the nozzle The amount of supply of the first aqueous phosphoric acid solution and the second aqueous phosphoric acid solution is determined.
在本發明之一實施形態中,上述補充條件係包含與被貯存在上述槽的液量相關的液量條件、與藉由自上述噴嘴所被供給之磷酸水溶液而被處理的基板之片數相關的處理數條件、及與自上述槽朝向上述噴嘴而所被供給之磷酸水溶液中之矽濃度相關的矽 濃度條件之中之至少一者。 In one embodiment of the present invention, the supplementary condition includes a liquid amount condition relating to a liquid amount stored in the tank, and a number of substrates processed by the phosphoric acid aqueous solution supplied from the nozzle. The number of treatment conditions and the enthalpy concentration in the aqueous phosphoric acid solution supplied from the tank toward the nozzle At least one of the concentration conditions.
在本發明之一實施形態中,上述基板處理裝置係進而包含有第3磷酸水溶液供給手段,該第3磷酸水溶液供給手段係將在與上述第1濃度及上述第2濃度之任一者皆不同之第3濃度包含有矽的第3磷酸水溶液供給至上述槽,上述控制手段係進而控制上述第3磷酸水溶液供給手段。 In one embodiment of the present invention, the substrate processing apparatus further includes a third aqueous phosphoric acid solution supply means, wherein the third aqueous phosphoric acid aqueous solution supply means is different from any of the first concentration and the second concentration The third concentration includes a third aqueous phosphoric acid solution containing ruthenium supplied to the tank, and the control means further controls the third aqueous phosphoric acid solution supply means.
在本發明之一實施形態中,上述槽係包含有:回收槽,其經由回收配管而被導入有用於基板處理所被使用的磷酸水溶液;及供給槽,其經由調合液供給配管而被供給有貯存在上述回收槽的磷酸水溶液;被貯存在上述供給槽之磷酸水溶液係經由供給配管而被供給至上述噴嘴,上述第1磷酸水溶液及上述第2磷酸水溶液係被供給至上述回收槽。 In one embodiment of the present invention, the tank includes a recovery tank into which a phosphoric acid aqueous solution used for substrate processing is introduced via a recovery pipe, and a supply tank that is supplied via a mixing liquid supply pipe. The phosphoric acid aqueous solution stored in the recovery tank; the phosphoric acid aqueous solution stored in the supply tank is supplied to the nozzle through a supply pipe, and the first phosphoric acid aqueous solution and the second phosphoric acid aqueous solution are supplied to the recovery tank.
在本發明之一實施形態中,上述回收槽係設置有複數個。而且,上述控制手段係進而執行如下之步驟:回收目的地選擇步驟,其自上述複數個回收槽中選擇經由上述回收配管而被回收之磷酸水溶液之回收目的地;供給目的地選擇步驟,其將上述第1磷酸水溶液及上述第2磷酸水溶液的供給目的地,選擇為在上述回收目的地選擇步驟中所被選擇之回收槽;及補充來源選擇步驟,其選擇在複數個回收槽中於上述回收槽選擇步驟所未被選擇的回收槽,作為用以經由上述調合液供給配管而將磷酸水溶液補充至上述供給槽的補充來源。 In an embodiment of the present invention, the plurality of recovery tanks are provided. Further, the control means further performs the following steps: a recovery destination selection step of selecting a recovery destination of the phosphoric acid aqueous solution recovered through the recovery pipe from the plurality of recovery tanks; and a supply destination selection step The supply destination of the first phosphoric acid aqueous solution and the second phosphoric acid aqueous solution is selected as a recovery tank selected in the collection destination selection step; and a supplementary source selection step is selected in the plurality of recovery tanks for the recovery The recovery tank not selected in the tank selection step serves as a supplementary source for replenishing the phosphoric acid aqueous solution to the supply tank via the mixing liquid supply piping.
在本發明之一實施形態中,上述基板處理裝置係進而包含有:第1積算流量計,其測量上述第1磷酸水溶液供給手段供給至上述槽的上述第1磷酸水溶液之供給量;及第2積算流量計, 其測量上述第2磷酸水溶液供給手段供給至上述槽的上述第2磷酸水溶液之供給量;上述控制手段係進而執行供給量管理步驟,該供給量管理步驟係基於上述第1積算流量計及上述第2積算流量計的測量結果,而管理上述第1磷酸水溶液及上述第2磷酸水溶液之朝上述槽的供給。 In one embodiment of the present invention, the substrate processing apparatus further includes: a first integrated flowmeter that measures a supply amount of the first phosphoric acid aqueous solution supplied to the tank by the first phosphoric acid aqueous solution supply means; and a second Accumulating flowmeter, Measuring the supply amount of the second phosphoric acid aqueous solution supplied to the tank by the second aqueous phosphoric acid solution supply means; and the control means further performing a supply amount management step based on the first integrated flowmeter and the first (2) The measurement results of the flowmeter are integrated, and the supply of the first aqueous phosphoric acid solution and the second aqueous phosphoric acid solution to the tank is managed.
本發明中之上述或進而其他之目的、特徵及效果係藉由參照所附圖式而進行如下所述之實施形態之說明而可明瞭。 The above and other objects, features and advantages of the present invention will become apparent from
1‧‧‧基板處理裝置 1‧‧‧Substrate processing unit
2‧‧‧處理單元 2‧‧‧Processing unit
3‧‧‧控制裝置 3‧‧‧Control device
3a‧‧‧電腦本體 3a‧‧‧ computer body
3b‧‧‧周邊裝置 3b‧‧‧ peripheral devices
4‧‧‧腔室 4‧‧‧ chamber
5‧‧‧旋轉夾頭 5‧‧‧Rotary chuck
6‧‧‧夾頭銷 6‧‧‧Chuck pin
7‧‧‧旋轉基座 7‧‧‧Spinning base
8‧‧‧旋轉軸 8‧‧‧Rotary axis
9‧‧‧旋轉馬達 9‧‧‧Rotary motor
10‧‧‧處理杯 10‧‧‧Processing Cup
11‧‧‧擋板 11‧‧‧Baffle
11a‧‧‧頂板部 11a‧‧‧Top Board
11b‧‧‧筒狀部 11b‧‧‧Cylinder
12‧‧‧杯 12‧‧‧ cup
12a‧‧‧受液溝 12a‧‧‧Liquid
13‧‧‧擋板升降單元 13‧‧‧Baffle lifting unit
14‧‧‧磷酸噴嘴 14‧‧‧phosphoric acid nozzle
15‧‧‧磷酸配管 15‧‧‧phosphoric acid piping
16‧‧‧磷酸閥 16‧‧‧Phosphate valve
17‧‧‧第1噴嘴移動單元 17‧‧‧1st Nozzle Moving Unit
18‧‧‧SC1噴嘴 18‧‧‧SC1 nozzle
19‧‧‧SC1配管 19‧‧‧SC1 piping
20‧‧‧SC1閥 20‧‧‧SC1 valve
21‧‧‧第2噴嘴移動單元 21‧‧‧2nd Nozzle Moving Unit
22‧‧‧淋洗液噴嘴 22‧‧‧Eluent nozzle
23‧‧‧淋洗液配管 23‧‧‧Eluent piping
24‧‧‧淋洗液閥 24‧‧‧Eluent valve
29‧‧‧閥 29‧‧‧Valves
30‧‧‧磷酸供給系統 30‧‧‧phosphoric acid supply system
31‧‧‧供給槽 31‧‧‧Supply tank
32‧‧‧循環配管 32‧‧‧Recycling piping
33‧‧‧泵 33‧‧‧ pump
34‧‧‧加熱器 34‧‧‧heater
35‧‧‧過濾器 35‧‧‧Filter
36‧‧‧分歧配管 36‧‧‧Differential piping
37‧‧‧矽濃度計 37‧‧‧矽 concentration meter
38‧‧‧閥 38‧‧‧Valves
39‧‧‧閥 39‧‧‧Valves
40‧‧‧排放系統 40‧‧‧Drainage system
41‧‧‧排放配管 41‧‧‧Drainage piping
42‧‧‧排放閥 42‧‧‧Drain valve
43‧‧‧排放流量調整閥 43‧‧‧Drainage flow adjustment valve
44‧‧‧液量感測器 44‧‧‧Liquid sensor
44h‧‧‧上限感測器 44h‧‧‧Upper limit sensor
44L‧‧‧下限感測器 44L‧‧‧lower limit sensor
44t‧‧‧目標感測器 44t‧‧‧target sensor
45A‧‧‧第1排放系統 45A‧‧‧1st emission system
45B‧‧‧第2排放系統 45B‧‧‧2nd emission system
46A‧‧‧排放配管 46A‧‧‧Emission piping
46B‧‧‧排放配管 46B‧‧‧Drainage piping
47A‧‧‧排放閥 47A‧‧‧Drain valve
47B‧‧‧排放閥 47B‧‧‧Drain valve
50‧‧‧新液補充系統 50‧‧‧New Liquid Replenishment System
51‧‧‧新液調合槽 51‧‧‧New liquid mixing tank
52‧‧‧新液補充配管 52‧‧‧New liquid replenishing piping
52A‧‧‧第1支管 52A‧‧‧1st tube
52B‧‧‧第2支管 52B‧‧‧2nd tube
53‧‧‧新液補充閥 53‧‧‧New fluid supplement valve
53A‧‧‧第1新液補充閥 53A‧‧‧1st new liquid filling valve
53B‧‧‧第2新液補充閥 53B‧‧‧2nd new liquid filling valve
54‧‧‧泵 54‧‧‧ pump
55‧‧‧磷酸原液配管 55‧‧‧phosphoric acid piping
56‧‧‧磷酸原液閥 56‧‧‧phosphoric acid solution valve
57‧‧‧矽濃縮液配管 57‧‧‧矽Concentrate piping
58‧‧‧矽閥 58‧‧‧矽 valve
59‧‧‧磷酸原液補充配管 59‧‧‧ Phosphate stock supplement pipe
59A‧‧‧第1支管 59A‧‧‧1st pipe
59B‧‧‧第2支管 59B‧‧‧2nd tube
60‧‧‧磷酸原液補充閥 60‧‧‧phosphoric acid supplement valve
60A‧‧‧第1磷酸原液補充閥 60A‧‧‧1st Phosphate Solution Filling Valve
60B‧‧‧第2磷酸原液補充閥 60B‧‧‧2nd Phosphate Solution Filling Valve
61‧‧‧積算流量計 61‧‧‧ accumulating flowmeter
62‧‧‧積算流量計 62‧‧‧Integrated flowmeter
63‧‧‧循環路徑 63‧‧‧Circular path
64‧‧‧閥 64‧‧‧ valve
65‧‧‧閥 65‧‧‧ valve
70‧‧‧回收系統 70‧‧‧Recycling system
71‧‧‧回收配管 71‧‧‧Recycling piping
71A‧‧‧第1回收支管 71A‧‧‧1st recycling branch
71B‧‧‧第2回收支管 71B‧‧‧2nd recycling branch
72‧‧‧回收閥 72‧‧‧Recovery valve
72A‧‧‧第1回收閥 72A‧‧‧1st recovery valve
72B‧‧‧第2回收閥 72B‧‧‧2nd recovery valve
75A、75B‧‧‧下限液量感測器 75A, 75B‧‧‧Limited liquid volume sensor
76A、76B‧‧‧回收停止液量感測器 76A, 76B‧‧‧Recycling stop volume sensor
77A、77B‧‧‧目標液量感測器 77A, 77B‧‧‧ Target Liquid Sensor
80‧‧‧排液系統 80‧‧‧Draining system
81‧‧‧排液配管 81‧‧‧Draining piping
82‧‧‧排液閥 82‧‧‧Drain valve
90A‧‧‧第1回收槽 90A‧‧‧1st recycling tank
90B‧‧‧第2回收槽 90B‧‧‧2nd recycling tank
91‧‧‧處理器 91‧‧‧Processor
92‧‧‧主儲存裝置 92‧‧‧Main storage device
93‧‧‧輔助儲存裝置 93‧‧‧Auxiliary storage device
94‧‧‧讀取裝置 94‧‧‧Reading device
95‧‧‧通信裝置 95‧‧‧Communication devices
96‧‧‧輸入裝置 96‧‧‧ Input device
97‧‧‧顯示裝置 97‧‧‧ display device
100‧‧‧補充配管 100‧‧‧Supply piping
100A‧‧‧第1支管 100A‧‧‧1st pipe
100B‧‧‧第2支管 100B‧‧‧2nd tube
101A‧‧‧第1補充閥 101A‧‧‧1st supplementary valve
101B‧‧‧第2補充閥 101B‧‧‧2nd supplementary valve
102‧‧‧泵 102‧‧‧ pump
103‧‧‧加熱器 103‧‧‧heater
111‧‧‧第2新液調合槽 111‧‧‧2nd new liquid mixing tank
112‧‧‧第2磷酸原液閥 112‧‧‧2nd phosphate stock solution valve
113‧‧‧第2磷酸原液配管 113‧‧‧2nd phosphate stock solution piping
114‧‧‧第2矽閥 114‧‧‧2nd valve
115‧‧‧第2矽濃縮液配管 115‧‧‧Second-phase concentrate piping
121‧‧‧第1新液補充來源選擇閥 121‧‧‧1st new liquid supplement source selection valve
122‧‧‧第2新液補充來源選擇閥 122‧‧‧2nd new liquid supplement source selection valve
A1‧‧‧旋轉軸線 A1‧‧‧Rotation axis
Fn‧‧‧氮化矽膜 Fn‧‧‧ nitride film
Fo‧‧‧氧化矽膜 Fo‧‧‧Oxide film
HC‧‧‧主電腦 HC‧‧‧ main computer
M‧‧‧可移除式媒體 M‧‧‧Removable Media
P‧‧‧程式 P‧‧‧ program
R‧‧‧配方 R‧‧‧ Formula
W‧‧‧基板 W‧‧‧Substrate
S1-S9、S11-S20、S21-S25、S31-S33、S41-S49‧‧‧步驟 S1-S9, S11-S20, S21-S25, S31-S33, S41-S49‧‧
圖1是自水平方向觀察本發明之一實施形態之基板處理裝置所具備有之處理單元之圖解性之示意圖。 Fig. 1 is a schematic view showing a processing unit provided in a substrate processing apparatus according to an embodiment of the present invention as seen from a horizontal direction.
圖2是用於說明於上述基板處理裝置所具備有之磷酸供給系統之構成之示意圖。 FIG. 2 is a schematic view for explaining a configuration of a phosphoric acid supply system provided in the substrate processing apparatus.
圖3是用於說明上述基板處理裝置之主要電性構成之方塊圖。 Fig. 3 is a block diagram for explaining a main electrical configuration of the substrate processing apparatus.
圖4是顯示藉由上述基板處理裝置而被處理之基板之一例之剖視圖。 4 is a cross-sectional view showing an example of a substrate processed by the substrate processing apparatus.
圖5是用於說明藉由上述基板處理裝置而所進行之基板處理之一例之步驟圖。 Fig. 5 is a step diagram for explaining an example of substrate processing performed by the substrate processing apparatus.
圖6是用於說明上述基板處理裝置中之與磷酸水溶液之供給相關連之處理之流程圖。 Fig. 6 is a flow chart for explaining processing associated with supply of an aqueous phosphoric acid solution in the above substrate processing apparatus.
圖7是用於說明本發明之其他實施形態之基板處理裝置之構成之示意圖,而主要顯示磷酸供給系統之構成。 Fig. 7 is a schematic view showing the configuration of a substrate processing apparatus according to another embodiment of the present invention, and mainly shows a configuration of a phosphoric acid supply system.
圖8是用於說明圖7之構成之基板處理裝置之電性構成之方塊圖。 Fig. 8 is a block diagram for explaining an electrical configuration of a substrate processing apparatus having the configuration of Fig. 7;
圖9是用於說明圖7之構成之基板處理裝置中之與磷酸水溶液之供給相關連之處理之流程圖,而表示與朝基板供給磷酸水溶液及朝供給槽補充磷酸水溶液相關之動作。 FIG. 9 is a flow chart for explaining a process related to supply of an aqueous phosphoric acid solution in the substrate processing apparatus of the configuration of FIG. 7, and shows an operation related to supply of a phosphoric acid aqueous solution to the substrate and supply of a phosphoric acid aqueous solution to the supply tank.
圖10是用於說明圖7之構成之基板處理裝置中之與磷酸水溶液之供給相關連之處理之流程圖,而表示與選擇使用完畢磷酸之回收目的地及選擇朝供給槽之磷酸水溶液補充來源相關之動作。 Fig. 10 is a flow chart for explaining the process associated with the supply of the phosphoric acid aqueous solution in the substrate processing apparatus of the configuration of Fig. 7, and shows the recovery destination of the selected phosphoric acid and the source of the phosphoric acid aqueous solution selected for the supply tank. Related actions.
圖11是用於說明圖7之構成之基板處理裝置中之與磷酸水溶液之供給相關連之處理之流程圖,而表示與新液對於回收槽之補充相關之動作。 Fig. 11 is a flow chart for explaining the process associated with the supply of the phosphoric acid aqueous solution in the substrate processing apparatus of the configuration of Fig. 7, and shows the operation related to the replenishment of the new liquid to the recovery tank.
圖12是用於說明本發明之進而其他之實施形態之基板處理裝置之構成之示意圖。 Fig. 12 is a schematic view showing the configuration of a substrate processing apparatus according to still another embodiment of the present invention.
圖1係自水平方向觀察本發明之一實施形態之基板處理裝置所具備有之處理單元的圖解性之示意圖。基板處理裝置1係一片一片地處理半導體晶圓等之基板W的單片式之裝置。基板處理裝置1係包含有利用處理液或處理氣體等之處理流體處理基板W的複數個處理單元2(於圖1中僅顯示一個)、將基板W搬送至複數個處理單元2的搬送機器人(未圖示)、及控制基板處理裝置1的控制裝置3(控制手段)。 Fig. 1 is a schematic view showing a processing unit provided in a substrate processing apparatus according to an embodiment of the present invention as seen from a horizontal direction. The substrate processing apparatus 1 is a one-piece apparatus for processing a substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a plurality of processing units 2 (only one is shown in FIG. 1) for processing the substrate W by a processing fluid such as a processing liquid or a processing gas, and a transfer robot that transports the substrate W to the plurality of processing units 2 ( Not shown) and the control device 3 (control means) for controlling the substrate processing apparatus 1.
處理單元2係包含有:旋轉夾頭5,其一面在腔室4內水平地保持基板W,一面繞通過基板W中央部之鉛直的旋轉軸線A1旋轉;及筒狀之處理杯10,其承接自基板W朝外方飛散之處理液。 The processing unit 2 includes a rotary chuck 5 that horizontally holds the substrate W in the chamber 4 and rotates around a vertical rotation axis A1 passing through the central portion of the substrate W; and a cylindrical processing cup 10 that receives The treatment liquid scattered from the substrate W toward the outside.
旋轉夾頭5係包含有:圓板狀之旋轉基座7,其以水 平之姿勢被保持;複數個夾頭銷6,其在旋轉基座7之上方以水平之姿勢保持基板W;旋轉軸8,其自旋轉基座7之中央部朝下方延伸;及旋轉馬達9,其藉由使旋轉軸8旋轉而使旋轉基座7及複數個夾頭銷6旋轉。旋轉夾頭5係並不限於使複數個夾頭銷6接觸於基板W之外周面而夾持的夾持式夾頭,亦可為藉由使非元件形成面即基板W之背面(下表面)吸附於旋轉基座7之上表面而水平地保持基板W的真空吸引式夾頭。 The rotary chuck 5 includes a disc-shaped rotating base 7 which is water The flat posture is held; a plurality of collet pins 6 that hold the substrate W in a horizontal position above the spin base 7; a rotating shaft 8 that extends downward from a central portion of the spin base 7; and a rotary motor 9 The rotation base 8 and the plurality of chuck pins 6 are rotated by rotating the rotary shaft 8. The rotary chuck 5 is not limited to a clamp type chuck in which a plurality of chuck pins 6 are brought into contact with the outer peripheral surface of the substrate W, and may be a back surface (lower surface of the substrate W) by forming a non-element forming surface. A vacuum suction type chuck that is adsorbed on the upper surface of the spin base 7 to horizontally hold the substrate W.
處理杯10係包含有:複數個擋板11,其承接自基板W朝外方排出之液體;複數個杯12,其承接藉由擋板11而朝下方導引之液體。擋板11係包含有:圓筒狀之筒狀部11b,其包圍旋轉夾頭5;及圓環狀之頂板部11a,其自筒狀部11b之上端部朝向旋轉軸線A1往斜上方延伸。複數個頂板部11a係於上下方向上重疊,複數個筒狀部11b係呈同心筒狀地配置。複數個杯12係分別配置於複數個筒狀部11b之下方。杯12係形成有朝上方開放的環狀之受液溝12a。 The processing cup 10 includes a plurality of baffles 11 that receive liquid discharged from the substrate W toward the outside, and a plurality of cups 12 that receive the liquid guided downward by the baffle 11. The baffle 11 includes a cylindrical tubular portion 11b that surrounds the rotary chuck 5, and an annular top plate portion 11a that extends obliquely upward from the upper end portion of the tubular portion 11b toward the rotation axis A1. The plurality of top plate portions 11a are overlapped in the vertical direction, and the plurality of cylindrical portions 11b are arranged in a concentric cylindrical shape. A plurality of cups 12 are disposed below the plurality of cylindrical portions 11b, respectively. The cup 12 is formed with an annular receiving groove 12a that is open upward.
處理單元2係包含有:擋板升降單元13,其使複數個擋板11個別地升降。擋板升降單元13係使擋板11在上位置與下位置之間沿著鉛直方向升降。在上位置,擋板11之上端係較旋轉夾頭5保持基板W的基板保持位置而位於更上方。在下位置,擋板11之上端係較基板保持位置而位於更下方。頂板部11a之圓環狀之上端係相當於擋板11之上端。於俯視時,擋板11之上端係包圍基板W及旋轉基座7。 The processing unit 2 includes a baffle lifting unit 13 that individually raises and lowers a plurality of baffles 11. The shutter lifting unit 13 moves the shutter 11 up and down in the vertical direction between the upper position and the lower position. In the upper position, the upper end of the baffle 11 is located above the substrate holding position of the substrate W by the rotary chuck 5. In the lower position, the upper end of the baffle 11 is located further below the substrate holding position. The upper end of the annular portion of the top plate portion 11a corresponds to the upper end of the baffle 11. The upper end of the baffle 11 surrounds the substrate W and the spin base 7 in a plan view.
在旋轉夾頭5使基板W旋轉之狀態下,當處理液被供給至基板W時,被供給至基板W的處理液係藉由離心力而朝基 板W之周圍甩開。於處理液被供給至基板W時,至少一個擋板11之上端係配置於較基板W更上方。因此,排出至基板W之周圍的藥液或淋洗液等之處理液係藉由任一之擋板11而被承接,而被導引至與該擋板11所對應的杯12。 In a state where the substrate W is rotated by the rotary chuck 5, when the processing liquid is supplied to the substrate W, the processing liquid supplied to the substrate W is directed to the base by centrifugal force. The board W is opened around. When the processing liquid is supplied to the substrate W, at least one upper end of the baffle 11 is disposed above the substrate W. Therefore, the treatment liquid such as the chemical liquid or the eluent discharged to the periphery of the substrate W is received by any of the baffles 11, and is guided to the cup 12 corresponding to the baffle 11.
處理單元2係包含有:磷酸噴嘴14,其朝向基板W之上表面往下方吐出磷酸水溶液。磷酸噴嘴14係連接至導引磷酸水溶液的磷酸配管15。當介設於磷酸配管15的磷酸閥16被開啟,則磷酸水溶液係自磷酸噴嘴14之吐出口朝下方連續地被吐出。 The processing unit 2 includes a phosphoric acid nozzle 14 that discharges an aqueous phosphoric acid solution downward toward the upper surface of the substrate W. The phosphoric acid nozzle 14 is connected to a phosphate pipe 15 that guides an aqueous phosphoric acid solution. When the phosphate valve 16 disposed in the phosphoric acid pipe 15 is opened, the phosphoric acid aqueous solution is continuously discharged downward from the discharge port of the phosphoric acid nozzle 14.
磷酸水溶液係以磷酸(H3PO4)作為主成分的水溶液。磷酸水溶液中之磷酸之濃度係例如為50%~100%之範圍,較佳為90%前後。磷酸水溶液之沸點係因磷酸水溶液中之磷酸濃度而有所不同,大致為140℃~195℃之範圍。自磷酸噴嘴14所吐出之磷酸水溶液係包含有矽。磷酸水溶液中之矽濃度係被控制在規定矽濃度範圍。規定矽濃度範圍係例如為15ppm~150ppm,較佳為40ppm~60ppm。於磷酸水溶液所被包含之矽係可為矽單體,亦可為矽化合物,亦可為該等之兩者。此外,於磷酸水溶液所被包含之矽亦可為包含藉由磷酸水溶液之供給而自基板W所溶出之矽。此外,於磷酸水溶液所被包含之矽亦可包含添加至磷酸水溶液的矽。 The aqueous phosphoric acid solution is an aqueous solution containing phosphoric acid (H 3 PO 4 ) as a main component. The concentration of the phosphoric acid in the aqueous phosphoric acid solution is, for example, in the range of 50% to 100%, preferably about 90%. The boiling point of the aqueous phosphoric acid solution differs depending on the concentration of phosphoric acid in the aqueous phosphoric acid solution, and is approximately in the range of 140 ° C to 195 ° C. The aqueous phosphoric acid solution discharged from the phosphoric acid nozzle 14 contains ruthenium. The concentration of rhodium in the aqueous phosphoric acid solution is controlled to a specified concentration range. The cerium concentration range is, for example, 15 ppm to 150 ppm, preferably 40 ppm to 60 ppm. The lanthanide contained in the aqueous phosphoric acid solution may be a ruthenium monomer, a ruthenium compound, or both. Further, the ruthenium contained in the phosphoric acid aqueous solution may be a ruthenium which is eluted from the substrate W by the supply of the phosphoric acid aqueous solution. Further, the ruthenium added to the phosphoric acid aqueous solution may be contained in the ruthenium phosphate aqueous solution.
雖省略圖示,磷酸閥16係包含有形成流路的閥主體、配置於流路內的閥體、使閥體移動的致動器。對於以下所說明之其他閥亦相同。致動器係可為空壓致動器,可為電動致動器,亦可為該等以外之致動器。控制裝置3係藉由控制致動器而對磷酸閥16進行開閉,或對其之開度進行變更。 Although not shown in the drawings, the phosphate valve 16 includes a valve body that forms a flow path, a valve body that is disposed in the flow path, and an actuator that moves the valve body. The same is true for the other valves described below. The actuator may be a pneumatic actuator, may be an electric actuator, or may be an actuator other than the actuator. The control device 3 opens and closes the phosphate valve 16 by controlling the actuator, or changes the opening degree thereof.
在本實施形態中,磷酸噴嘴14係具有可在腔室4內 移動之掃描噴嘴之形態。磷酸噴嘴14係與第1噴嘴移動單元17結合,第1噴嘴移動單元17係使磷酸噴嘴14朝鉛直方向及水平方向之至少一側移動。第1噴嘴移動單元17係使磷酸噴嘴14在自磷酸噴嘴14所被吐出之磷酸水溶液著液至基板W之上表面的處理位置、及於俯視時磷酸噴嘴14位於旋轉夾頭5之外側的退避位置之間移動。 In the present embodiment, the phosphoric acid nozzle 14 is provided in the chamber 4 The shape of the scanning nozzle that moves. The phosphoric acid nozzle 14 is coupled to the first nozzle moving unit 17, and the first nozzle moving unit 17 moves the phosphoric acid nozzle 14 in at least one of the vertical direction and the horizontal direction. The first nozzle moving unit 17 is a processing position at which the phosphoric acid nozzle 14 is immersed in the upper surface of the substrate W by the phosphoric acid aqueous solution discharged from the phosphoric acid nozzle 14 and the retreating of the phosphoric acid nozzle 14 on the outer side of the rotary chuck 5 in plan view. Move between positions.
處理單元2係包含有:SC1噴嘴18,其朝向基板W之上表面往下方吐出SC1(包含NH4OH與H2O2之混合液)。SC1噴嘴18係連接至導引SC1的SC1配管19。當介設於SC1配管19的SC1閥20被開啟時,則SC1係自SC1噴嘴18之吐出口連續地被吐出。 The processing unit 2 includes an SC1 nozzle 18 that discharges SC1 (containing a mixed liquid of NH 4 OH and H 2 O 2 ) downward toward the upper surface of the substrate W. The SC1 nozzle 18 is connected to the SC1 pipe 19 of the pilot SC1. When the SC1 valve 20 interposed in the SC1 pipe 19 is opened, the SC1 is continuously discharged from the discharge port of the SC1 nozzle 18.
於本實施形態中,SC1噴嘴18係具有可在腔室4內移動之掃描噴嘴之形態。SC1噴嘴18係與第2噴嘴移動單元21結合。第2噴嘴移動單元21係使SC1噴嘴18朝鉛直方向及水平方向之至少一側移動。第2噴嘴移動單元21係使SC1噴嘴18在自SC1噴嘴18所被吐出之SC1著液至基板W之上表面的處理位置、及於俯視時SC1噴嘴18位於旋轉夾頭5之外側的退避位置之間移動。 In the present embodiment, the SC1 nozzle 18 has a form of a scanning nozzle that can move in the chamber 4. The SC1 nozzle 18 is coupled to the second nozzle moving unit 21. The second nozzle moving unit 21 moves the SC1 nozzle 18 in at least one of the vertical direction and the horizontal direction. The second nozzle moving unit 21 is a processing position at which the SC1 nozzle 18 is liquided from the SC1 discharged from the SC1 nozzle 18 to the upper surface of the substrate W, and the retracted position of the SC1 nozzle 18 on the outer side of the rotary chuck 5 in a plan view. Move between.
處理單元2係進而包含有:淋洗液噴嘴22,其朝向基板W之上表面往下方吐出淋洗液。淋洗液噴嘴22係連接至導引淋洗液的淋洗液配管23。當介設於淋洗液配管23的淋洗液閥24被開啟時,則淋洗液係自淋洗液噴嘴22之吐出口朝下方連續地被吐出。淋洗液係例如為純水(去離子水)。淋洗液之其他例係電解離子水、氫水、臭氧水、稀釋濃度(例如10ppm~100ppm左右)之鹽酸水等。 The processing unit 2 further includes an eluent nozzle 22 that discharges the eluent toward the upper surface of the substrate W. The eluent nozzle 22 is connected to the eluent pipe 23 that guides the eluent. When the eluent valve 24 interposed in the eluent pipe 23 is opened, the eluent is continuously discharged downward from the discharge port of the eluent nozzle 22. The eluent is, for example, pure water (deionized water). Other examples of the eluent are electrolytic ionized water, hydrogen water, ozone water, hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm).
於本實施形態中,淋洗液噴嘴22係自位置被固定之吐出口吐出淋洗液的固定噴嘴。淋洗液噴嘴22係相對於腔室4之底部而被固定。處理單元2亦可具備有噴嘴移動單元,該噴嘴移動單元係使淋洗液噴嘴22在自淋洗液噴嘴22所被吐出之淋洗液著液至基板W之上表面的處理位置、及於俯視時淋洗液噴嘴22位於旋轉夾頭5之外側的退避位置之間移動。 In the present embodiment, the eluent nozzle 22 is a fixed nozzle that discharges the eluent from the discharge port where the position is fixed. The eluent nozzle 22 is fixed relative to the bottom of the chamber 4. The processing unit 2 may further include a nozzle moving unit that causes the eluent nozzle 22 to immerse the eluent discharged from the eluent nozzle 22 to a processing position on the upper surface of the substrate W, and The eluent nozzle 22 moves between the retracted positions on the outer side of the reversing chuck 5 in a plan view.
圖2是用於說明在基板處理裝置1所具備有之磷酸供給系統30之構成之示意圖。 FIG. 2 is a schematic view for explaining the configuration of the phosphoric acid supply system 30 provided in the substrate processing apparatus 1.
磷酸供給系統30係包含有:供給槽31(槽),其貯存自磷酸噴嘴14所吐出之磷酸水溶液;及循環配管32,其使供給槽31內之磷酸水溶液循環。磷酸供給系統30係進而包含有:泵33,其將供給槽31內之磷酸水溶液輸送至循環配管32;加熱器34,其在藉由供給槽31及循環配管32所形成之循環路徑之途中加熱磷酸水溶液;及過濾器35,其自流動於循環配管32內的磷酸水溶液除去異物。泵33、過濾器35及加熱器34係介設於循環配管32。供給槽31係貯存磷酸水溶液之槽之一例。 The phosphoric acid supply system 30 includes a supply tank 31 (tank) for storing the phosphoric acid aqueous solution discharged from the phosphoric acid nozzle 14 and a circulation pipe 32 for circulating the phosphoric acid aqueous solution in the supply tank 31. The phosphoric acid supply system 30 further includes a pump 33 that transports the phosphoric acid aqueous solution in the supply tank 31 to the circulation pipe 32, and a heater 34 that heats on the way of the circulation path formed by the supply tank 31 and the circulation pipe 32. An aqueous phosphoric acid solution; and a filter 35 for removing foreign matter from an aqueous phosphoric acid solution flowing in the circulation pipe 32. The pump 33, the filter 35, and the heater 34 are interposed in the circulation pipe 32. The supply tank 31 is an example of a tank for storing an aqueous phosphoric acid solution.
作為將磷酸水溶液供給至磷酸噴嘴14的供給配管之磷酸配管15係連接於循環配管32。泵33係不斷地將供給槽31內之磷酸水溶液輸送至循環配管32。磷酸供給系統30亦可具備有加壓裝置而取代泵33,該加壓裝置係藉由使供給槽31內之氣壓上升而將供給槽31內之磷酸水溶液推送至循環配管32。泵33及加壓裝置係均為將供給槽31內之磷酸水溶液送出至循環配管32及磷酸配管15的送液裝置之一例。 The phosphate pipe 15 as a supply pipe for supplying the phosphoric acid aqueous solution to the phosphoric acid nozzle 14 is connected to the circulation pipe 32. The pump 33 continuously supplies the aqueous phosphoric acid solution in the supply tank 31 to the circulation pipe 32. The phosphoric acid supply system 30 may be provided with a pressurizing device instead of the pump 33, and the pressurizing device pushes the aqueous phosphoric acid solution in the supply tank 31 to the circulation pipe 32 by raising the gas pressure in the supply tank 31. Each of the pump 33 and the pressurizing device is an example of a liquid feeding device that sends the aqueous phosphoric acid solution in the supply tank 31 to the circulation pipe 32 and the phosphoric acid pipe 15.
循環配管32之上游端及下游端係連接於供給槽31。 磷酸水溶液係自供給槽31被輸送至循環配管32之上游端,而自循環配管32之下游端返回至供給槽31。藉此,供給槽31內之磷酸水溶液係通過循環路徑而進行循環。於該循環之期間,於磷酸水溶液所含有之異物係藉由過濾器35而被除去,且磷酸水溶液係藉由加熱器34而被加熱。藉此,供給槽31內之磷酸水溶液係維持為較室溫(例如5℃~30℃)更高之固定溫度。藉由加熱器34而被加熱之磷酸水溶液之溫度係可為在該磷酸水溶液之濃度(磷酸濃度)的沸點,亦可為較該沸點低之溫度。 The upstream end and the downstream end of the circulation pipe 32 are connected to the supply tank 31. The aqueous phosphoric acid solution is sent from the supply tank 31 to the upstream end of the circulation pipe 32, and returns to the supply tank 31 from the downstream end of the circulation pipe 32. Thereby, the aqueous phosphoric acid solution in the supply tank 31 is circulated through the circulation path. During the cycle, the foreign matter contained in the phosphoric acid aqueous solution is removed by the filter 35, and the phosphoric acid aqueous solution is heated by the heater 34. Thereby, the aqueous phosphoric acid solution in the supply tank 31 is maintained at a fixed temperature higher than room temperature (for example, 5 ° C to 30 ° C). The temperature of the aqueous phosphoric acid solution heated by the heater 34 may be the boiling point of the concentration (phosphoric acid concentration) of the aqueous phosphoric acid solution, or may be a temperature lower than the boiling point.
於循環配管32之途中,連接有分歧配管36。於分歧配管36之途中介設有矽濃度計37,分歧配管36係於自循環配管32分歧而通過矽濃度計37之後合流至循環配管32。於分歧配管36,在矽濃度計37之上游側及下游側之兩側分別介設有閥38、39。 A branch pipe 36 is connected to the circulation pipe 32. A helium concentration meter 37 is disposed in the middle of the branch pipe 36, and the branch pipe 36 is branched from the circulation pipe 32 to pass through the helium concentration meter 37, and then merges to the circulation pipe 32. In the branch pipe 36, valves 38 and 39 are respectively disposed on both sides of the upstream side and the downstream side of the helium concentration meter 37.
為了對供給槽31內之磷酸水溶液進行排液,具備有排放系統40。排放系統40係包含有:排放配管41,其排出供給槽31內之磷酸水溶液;及排放閥42,其介設於排放配管41。於排放配管41亦可介設有用以調整磷酸水溶液之排出流量的排放流量調整閥43。藉由排放閥42被開啟,供給槽31內之磷酸水溶液係被排出至排放配管41。藉此,可配合所需要而減少供給槽31內之磷酸水溶液之量,或對供給槽31內之全部之磷酸水溶液進行排液。 In order to discharge the phosphoric acid aqueous solution in the supply tank 31, an exhaust system 40 is provided. The discharge system 40 includes a discharge pipe 41 that discharges the phosphoric acid aqueous solution in the supply tank 31, and a discharge valve 42 that is disposed in the discharge pipe 41. The discharge pipe 41 may also be provided with a discharge flow rate adjustment valve 43 for adjusting the discharge flow rate of the phosphoric acid aqueous solution. When the discharge valve 42 is opened, the phosphoric acid aqueous solution in the supply tank 31 is discharged to the discharge pipe 41. Thereby, the amount of the phosphoric acid aqueous solution in the supply tank 31 can be reduced as needed, or all of the phosphoric acid aqueous solution in the supply tank 31 can be drained.
為了檢測供給槽31內之磷酸水溶液之液量,設有複數個液量感測器44。複數個液量感測器44係包含有上限感測器44h、下限感測器44L、目標感測器44t。上限感測器44h係對供給槽31內之磷酸水溶液之液量是否為規定液量範圍之上限值以上而進行檢測。下限感測器44L係對供給槽31內之磷酸水溶液之液量 是否為規定液量範圍之下限值以下而進行檢測。目標感測器44t係對供給槽31內之磷酸水溶液之液量是否為上限值與下限值之間之目標值以上而進行檢測。當藉由磷酸水溶液之使用而使供給槽31內之磷酸水溶液之液量減少至下限值,則自新液補充系統50補充未使用之磷酸水溶液(新液)。新液係被補充至供給槽31內之磷酸水溶液之液量達到目標值為止。 In order to detect the amount of the phosphoric acid aqueous solution in the supply tank 31, a plurality of liquid amount sensors 44 are provided. The plurality of liquid amount sensors 44 include an upper limit sensor 44h, a lower limit sensor 44L, and a target sensor 44t. The upper limit sensor 44h detects whether or not the liquid amount of the phosphoric acid aqueous solution in the supply tank 31 is equal to or greater than the upper limit of the predetermined liquid amount range. The lower limit sensor 44L is the amount of the phosphoric acid aqueous solution in the supply tank 31 Whether it is detected below the lower limit of the specified liquid amount range. The target sensor 44t detects whether or not the liquid amount of the phosphoric acid aqueous solution in the supply tank 31 is equal to or higher than a target value between the upper limit value and the lower limit value. When the amount of the phosphoric acid aqueous solution in the supply tank 31 is reduced to the lower limit by the use of the phosphoric acid aqueous solution, the unused aqueous phosphoric acid solution (new liquid) is replenished from the new liquid replenishing system 50. The new liquid system is replenished until the liquid amount of the phosphoric acid aqueous solution in the supply tank 31 reaches the target value.
新液補充系統50係包含有:新液調合槽51;新液補充配管52,其自新液調合槽51將未使用之磷酸水溶液朝供給槽31導引;新液補充閥53,其介設於新液補充配管52;及泵54,其相同地介設於新液補充配管52。磷酸水溶液之原液(以下稱為「磷酸原液」)係經由磷酸原液配管55而被供給至新液調合槽51。所謂磷酸原液係指未添加矽之磷酸水溶液。於磷酸原液配管55介設有對該流路進行開閉的磷酸原液閥56。此外,矽濃縮液係經由矽濃縮液配管57而被供給至新液調合槽51。於矽濃縮液配管57介設有對該流路進行開閉的矽閥58。新液補充系統50係進而包含有:磷酸原液補充配管59,其用於將磷酸原液供給至供給槽31。磷酸原液補充配管59係於磷酸原液閥56之上游側而自磷酸原液配管55分歧,不經過新液調合槽51而連接至供給槽31。於磷酸原液補充配管59之途中介設有對該流路進行開閉的磷酸原液補充閥60。 The new liquid replenishing system 50 includes: a new liquid mixing tank 51; a new liquid replenishing pipe 52 that guides the unused phosphoric acid aqueous solution from the new liquid mixing tank 51 toward the supply tank 31; the new liquid replenishing valve 53 is provided The new liquid replenishing pipe 52; and the pump 54 are similarly disposed in the new liquid replenishing pipe 52. The stock solution of the phosphoric acid aqueous solution (hereinafter referred to as "phosphoric acid stock solution") is supplied to the new liquid mixing tank 51 via the phosphate raw material piping 55. The phosphoric acid stock solution means an aqueous phosphoric acid solution to which no rhodium is added. A phosphate raw liquid valve 56 that opens and closes the flow path is interposed in the phosphate raw material pipe 55. Further, the hydrazine concentrate is supplied to the new liquid mixing tank 51 via the hydrazine concentrate piping 57. The weir concentrate pipe 57 is provided with a weir valve 58 that opens and closes the flow path. The new liquid replenishing system 50 further includes a phosphate raw material replenishing pipe 59 for supplying the phosphoric acid raw material to the supply tank 31. The phosphate raw material supply pipe 59 is branched from the phosphoric acid raw material pipe 55 on the upstream side of the phosphoric acid raw material valve 56, and is connected to the supply tank 31 without passing through the new liquid mixing tank 51. A phosphate stock solution replenishing valve 60 that opens and closes the flow path is provided in the middle of the phosphate raw material replenishing pipe 59.
於新液補充配管52及磷酸原液補充配管59分別介設有積算流量計61、62。 The new liquid replenishing pipe 52 and the phosphoric acid raw material replenishing pipe 59 are provided with integrated flow meters 61 and 62, respectively.
開啟磷酸原液閥56而將固定量之磷酸原液供給至新液調合槽51,且開啟矽閥58而將固定量之矽濃縮液供給至新液調合槽51,藉此以既定之比率混合磷酸原液與矽濃縮液。換言之,以 磷酸原液及矽濃縮液成為既定之供給量比率之方式,分別定量地供給至新液調合槽51。藉此,在新液調合槽51內調製含有基準矽濃度(例如50ppm,第1濃度之例)之矽的磷酸水溶液。 The phosphate stock solution valve 56 is opened to supply a fixed amount of the phosphoric acid stock solution to the new liquid mixing tank 51, and the helium valve 58 is opened to supply a fixed amount of the cerium concentrate to the new liquid mixing tank 51, thereby mixing the phosphate stock solution at a predetermined ratio. With hydrazine concentrate. In other words, The phosphoric acid stock solution and the hydrazine concentrate are supplied to the new liquid mixing tank 51 in a quantitative manner so as to have a predetermined supply ratio. Thereby, a phosphoric acid aqueous solution containing a ruthenium concentration (for example, 50 ppm, a first concentration) is prepared in the fresh liquid mixing tank 51.
在新液調合槽51內所被調製之磷酸水溶液之矽濃度未必一定要確認,但亦可設置通過矽濃度計37而進行循環的循環路徑63,可配合需要而確認矽濃度。於循環路徑63,在矽濃度計37之上游側及下游側分別介設有閥64、65。 The ruthenium concentration of the phosphoric acid aqueous solution prepared in the fresh liquid mixing tank 51 is not necessarily confirmed, but a circulation path 63 that is circulated by the krypton concentration meter 37 may be provided, and the ruthenium concentration may be confirmed as needed. In the circulation path 63, valves 64 and 65 are interposed on the upstream side and the downstream side of the helium concentration meter 37, respectively.
藉由開啟新液補充閥53,驅動泵54,而可將在新液調合槽51所被調合之新液(在基準矽濃度包含有矽之未使用之磷酸水溶液)補充至供給槽31。該補充量係可藉由積算流量計61測量。此外,藉由開啟磷酸原液補充閥60,而可將磷酸原液(未含有矽之未使用之磷酸水溶液)補充至供給槽31。該補充量係可藉由積算流量計62測量。磷酸原液中之矽濃度為零(第2濃度之一例)。 By opening the new liquid replenishing valve 53, the pump 54 is driven, and the new liquid (the unused phosphoric acid aqueous solution containing the crucible at the reference crucible concentration) which is blended in the new liquid mixing tank 51 can be replenished to the supply tank 31. This supplemental amount can be measured by the integrated flow meter 61. Further, by opening the phosphoric acid stock replenishing valve 60, the phosphate stock solution (unused phosphoric acid aqueous solution containing no antimony) can be replenished to the supply tank 31. This supplemental amount can be measured by the integrated flow meter 62. The concentration of ruthenium in the phosphate stock solution is zero (one example of the second concentration).
藉由新液調合槽51、新液補充配管52、新液補充閥53及泵54等,構成供給標準矽濃度(第1濃度之例)之磷酸水溶液(第1磷酸水溶液)的第1磷酸水溶液供給手段。此外,藉由磷酸原液補充配管59及磷酸原液補充閥60等,構成供給零濃度(第二濃度之例)之磷酸水溶液(第2磷酸水溶液)的第2磷酸水溶液供給手段。 The new liquid preparation tank 51, the new liquid supply pipe 52, the new liquid supply valve 53, the pump 54, and the like constitute a first aqueous phosphoric acid solution for supplying a phosphoric acid aqueous solution (first aqueous phosphoric acid solution) having a standard hydrazine concentration (example of the first concentration). Supply means. In addition, the phosphoric acid stock solution replenishing pipe 59 and the phosphoric acid stock solution replenishing valve 60 and the like constitute a second phosphoric acid aqueous solution supply means for supplying a phosphoric acid aqueous solution (second aqueous phosphoric acid solution) having a zero concentration (in the second concentration).
基板處理裝置1係進而包含有:回收系統70,其用以回收在基板W之處理中所被使用之使用完畢磷酸水溶液。回收系統70係包含有處理杯10、回收配管71、回收閥72。回收配管71係將藉由處理杯10所承接之磷酸水溶液導引至供給槽31。回收閥72係對回收配管71之流路進行開閉。 The substrate processing apparatus 1 further includes a recovery system 70 for recovering the used phosphoric acid aqueous solution used in the processing of the substrate W. The recovery system 70 includes a processing cup 10, a recovery pipe 71, and a recovery valve 72. The recovery pipe 71 is guided to the supply tank 31 by the aqueous phosphoric acid solution received by the processing cup 10. The recovery valve 72 opens and closes the flow path of the recovery pipe 71.
基板處理裝置1係進而包含有:排液系統80,其用 以將用於使用在基板W之處理的處理液加以廢棄。排液系統80係包含有:排液配管81,其連接於處理杯10或回收配管71;及排液閥82,其對排液配管81之流路進行開閉。 The substrate processing apparatus 1 further includes: a liquid discharge system 80, which is used The treatment liquid used for the treatment using the substrate W is discarded. The liquid discharge system 80 includes a liquid discharge pipe 81 connected to the processing cup 10 or the recovery pipe 71, and a liquid discharge valve 82 that opens and closes the flow path of the liquid discharge pipe 81.
於回收閥72被開啟且排液閥82被關閉之回收狀態時,被處理杯10所承接之磷酸水溶液係藉由回收配管71被回收至供給槽31。於將使用完畢處理液加以廢棄時,設成為回收閥72被關閉且排液閥82被開啟之排液狀態。藉此,被處理杯10所承接之磷酸水溶液其他之處理液係被排出至排液配管81。 When the recovery valve 72 is opened and the drain valve 82 is closed, the aqueous phosphoric acid solution received by the treatment cup 10 is recovered into the supply tank 31 by the recovery pipe 71. When the used treatment liquid is discarded, the discharge valve 72 is closed and the discharge valve 82 is opened. Thereby, the other treatment liquid of the phosphoric acid aqueous solution received by the processing cup 10 is discharged to the liquid discharge pipe 81.
圖3是用於說明基板處理裝置1之主要電性構成之方塊圖。控制裝置3係包含有電腦本體3a、連接於電腦本體3a的周邊裝置3b。電腦本體3a係包含有處理器(CPU,Central Processing Unit)91、及主儲存裝置92。周邊裝置3b係包含有:程式P,其被處理器91所執行;輔助儲存裝置93,其儲存各種資料;讀取裝置94,其自可移除式媒體(Removable media)M讀取資訊;及通信裝置95,其與主電腦HC等之外部裝置進行通信。 FIG. 3 is a block diagram for explaining a main electrical configuration of the substrate processing apparatus 1. The control device 3 includes a computer main body 3a and a peripheral device 3b connected to the computer main body 3a. The computer main body 3a includes a processor (CPU, Central Processing Unit) 91 and a main storage device 92. The peripheral device 3b includes a program P that is executed by the processor 91, an auxiliary storage device 93 that stores various materials, and a reading device 94 that reads information from the removable media M (Removable Media); The communication device 95 communicates with an external device such as the host computer HC.
於控制裝置3連接有輸入裝置96及顯示裝置97。輸入裝置96係使用者或維修負責人員等之操作者為了將資訊輸入於基板處理裝置1而被進行操作的裝置。顯示裝置97係將各種資訊顯示於顯示畫面而提供給操作者等。輸入裝置96亦可為鍵盤、指向裝置(pointing device)、觸控面板等。 An input device 96 and a display device 97 are connected to the control device 3. The input device 96 is a device that is operated by an operator such as a user or a maintenance person in charge to input information to the substrate processing apparatus 1. The display device 97 displays various kinds of information on the display screen and provides them to the operator or the like. The input device 96 can also be a keyboard, a pointing device, a touch panel, or the like.
處理器91係執行儲存於輔助儲存裝置93的程式P。輔助儲存裝置93內之程式P亦可預先安裝於控制裝置3。此外,程式P亦可藉由讀取裝置94而自可移除式媒體M讀取而導入至輔助儲存裝置93。此外,程式P亦可經由通信裝置95而自主電腦HC 其他之外部裝置取得,而導入至輔助儲存裝置。 The processor 91 executes the program P stored in the auxiliary storage device 93. The program P in the auxiliary storage device 93 can also be pre-installed in the control device 3. In addition, the program P can also be imported from the removable medium M into the auxiliary storage device 93 by the reading device 94. In addition, the program P can also be autonomous computer HC via the communication device 95. Other external devices are acquired and imported into the auxiliary storage device.
輔助儲存裝置93及可移除式媒體M係即便不供給電力而保持記憶的非揮發性記憶體。輔助儲存裝置93亦可例如為硬碟等之磁性儲存裝置。可移除式媒體M亦可為光碟,亦可為半導體記憶體。輔助儲存裝置93及可移除式媒體M係記錄有程式P的電腦可讀取之記錄媒體之例。 The auxiliary storage device 93 and the removable medium M are non-volatile memories that retain memory even if power is not supplied. The auxiliary storage device 93 can also be, for example, a magnetic storage device such as a hard disk. The removable medium M can also be a compact disc or a semiconductor memory. The auxiliary storage device 93 and the removable medium M are examples of a computer-readable recording medium on which the program P is recorded.
控制裝置3係以隨著藉由主電腦HC所指定之配方R而處理基板W之方式控制基板處理裝置1。尤其,控制裝置3係控制處理單元2及磷酸供給系統30之各部分。更具體而言,控制裝置3係控制旋轉馬達9、擋板升降單元13、噴嘴移動單元17、21、閥類16、20、24等。此外,控制裝置3係控制泵33、54、加熱器34、閥類38、39、42、53、56、58、60、64、65、72等。進而,於控制裝置3輸入有來自感測器類之信號。感測器類係包含有液量感測器44、矽濃度計37、積算流量計61、62。 The control device 3 controls the substrate processing apparatus 1 such that the substrate W is processed in accordance with the recipe R specified by the host computer HC. In particular, the control device 3 controls each part of the processing unit 2 and the phosphoric acid supply system 30. More specifically, the control device 3 controls the rotary motor 9, the shutter lift unit 13, the nozzle moving units 17, 21, the valves 16, 20, 24, and the like. Further, the control device 3 controls the pumps 33, 54, the heater 34, the valves 38, 39, 42, 53, 56, 58, 60, 64, 65, 72 and the like. Further, a signal from the sensor type is input to the control device 3. The sensor type includes a liquid amount sensor 44, a helium concentration meter 37, and an integrated flow meter 61, 62.
輔助儲存裝置93係儲存有複數個配方R。配方R係包含有規定基板W之處理內容、處理條件及處理程序之資訊。複數個配方R係基板W之處理內容、處理條件及處理程序之至少一者為不同。基板處理之各步驟係藉由控制裝置3隨著配方R控制基板處理裝置1而被實現。即,控制裝置3係以執行基板處理之各步驟之方式被程式化。 The auxiliary storage device 93 stores a plurality of recipes R. The formulation R contains information on the processing contents, processing conditions, and processing procedures of the predetermined substrate W. At least one of the processing contents, processing conditions, and processing procedures of the plurality of recipes R-based substrates W is different. The steps of the substrate processing are realized by the control device 3 controlling the substrate processing device 1 with the recipe R. That is, the control device 3 is programmed to perform the steps of the substrate processing.
圖4是顯示藉由基板處理裝置1而被處理之基板W之一例之剖視圖。基板W係具有露出氧化矽膜Fo與氮化矽膜Fn之表面(元件形成面)的矽晶圓。在後述之基板處理之一例中,對於如此之基板W供給含有矽的磷酸水溶液,藉此進行氮化矽膜Fn之 選擇蝕刻。即,可一面抑制氧化矽膜Fo之蝕刻,一面以既定之蝕刻率(每單位時間之蝕刻量)蝕刻氮化矽膜Fn。 4 is a cross-sectional view showing an example of a substrate W processed by the substrate processing apparatus 1. The substrate W has a tantalum wafer having a surface (element forming surface) on which the tantalum oxide film Fo and the tantalum nitride film Fn are exposed. In an example of substrate processing to be described later, a phosphoric acid aqueous solution containing ruthenium is supplied to such a substrate W, whereby the tantalum nitride film Fn is performed. Select the etch. In other words, the tantalum nitride film Fn can be etched at a predetermined etching rate (etching amount per unit time) while suppressing etching of the ruthenium oxide film Fo.
圖5是用於說明藉由基板處理裝置1所進行之基板處理之一例之步驟圖。處理對象之基板W係藉由搬送機器人而被搬入至腔室4內,而被交接給旋轉夾頭5(步驟S1)。於搬送機器人退避至腔室4外之後,控制裝置3係使旋轉夾頭5旋轉,藉此使基板W繞鉛直之旋轉軸線A1旋轉(步驟S2)。 FIG. 5 is a step diagram for explaining an example of substrate processing performed by the substrate processing apparatus 1. The substrate W to be processed is carried into the chamber 4 by the transfer robot, and is transferred to the rotary chuck 5 (step S1). After the transfer robot is retracted to the outside of the chamber 4, the control device 3 rotates the rotary chuck 5, thereby rotating the substrate W about the vertical rotation axis A1 (step S2).
在該狀態下,對於基板W而供給磷酸水溶液(步驟S3)。更具體而言,第1噴嘴移動單元17係使磷酸噴嘴14移動至處理位置,擋板升降單元13係使任一之擋板11與基板W對向。其後,磷酸閥16被開啟,磷酸水溶液自磷酸噴嘴14被吐出。於磷酸噴嘴14吐出磷酸水溶液時,第1噴嘴移動單元17係亦可為使磷酸噴嘴14在自磷酸噴嘴14所被吐出之磷酸水溶液著液至基板W之上表面中央部的中央處理位置、及自磷酸噴嘴14所被吐出之磷酸水溶液著液至基板W之上表面周緣部的外周處理位置之間移動。此外,亦可以磷酸水溶液之著液位置位於基板W之上表面中央部之方式使磷酸噴嘴14靜止。 In this state, a phosphoric acid aqueous solution is supplied to the substrate W (step S3). More specifically, the first nozzle moving unit 17 moves the phosphoric acid nozzle 14 to the processing position, and the shutter raising unit 13 causes any of the shutters 11 to face the substrate W. Thereafter, the phosphoric acid valve 16 is opened, and the phosphoric acid aqueous solution is discharged from the phosphoric acid nozzle 14. When the phosphoric acid nozzle 14 discharges the phosphoric acid aqueous solution, the first nozzle moving unit 17 may be a central processing position in which the phosphoric acid nozzle 14 is immersed in the phosphoric acid aqueous solution discharged from the phosphoric acid nozzle 14 to the central portion of the upper surface of the substrate W, and The aqueous phosphoric acid solution discharged from the phosphoric acid nozzle 14 is moved to the outer peripheral processing position of the peripheral portion of the upper surface of the substrate W. Further, the phosphoric acid nozzle 14 may be made stationary so that the position of the phosphoric acid aqueous solution is located at the central portion of the upper surface of the substrate W.
自磷酸噴嘴14所被吐出之磷酸水溶液係於著液至基板W之上表面後,沿著旋轉之基板W之上表面而朝外側流動。藉此,形成有覆蓋基板W上表面全部區域的磷酸水溶液之液膜,而對基板W上表面全部區域供給磷酸水溶液。均勻地供給至基板W上表面全部區域。藉此,均勻地處理基板W之上表面。當磷酸閥16被開啟之後而經過既定時間,則關閉磷酸閥16,停止來自磷酸閥16的磷酸水溶液之吐出。其後,第1噴嘴移動單元17係使磷酸 閥16移動至退避位置。 The aqueous phosphoric acid solution discharged from the phosphoric acid nozzle 14 is applied to the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W that is rotated. Thereby, a liquid film of a phosphoric acid aqueous solution covering the entire upper surface of the substrate W is formed, and an aqueous phosphoric acid solution is supplied to the entire upper surface of the substrate W. It is uniformly supplied to the entire area of the upper surface of the substrate W. Thereby, the upper surface of the substrate W is uniformly processed. When the phosphoric acid valve 16 is turned on and the predetermined time elapses, the phosphate valve 16 is closed to stop the discharge of the phosphoric acid aqueous solution from the phosphate valve 16. Thereafter, the first nozzle moving unit 17 is made to phosphoric acid The valve 16 is moved to the retracted position.
磷酸水溶液係藉由離心力而朝基板W之外側飛出,並藉由與基板W對向的擋板11所承接。磷酸水溶液係進而藉由該擋板11而被導引往所對應之杯12,流入至回收配管71並朝供給槽31而被回收。 The phosphoric acid aqueous solution flies out to the outside of the substrate W by centrifugal force, and is received by the baffle 11 opposed to the substrate W. The phosphoric acid aqueous solution is further guided to the corresponding cup 12 by the baffle 11, and flows into the recovery pipe 71 and is recovered in the supply tank 31.
接著,進行將淋洗液之一例即純水供給至基板W之上表面的第1淋洗液供給步驟(步驟S4)。具體而言,淋洗液閥被開啟24,而淋洗液噴嘴22開始吐出純水。著液至基板W之上表面的純水係沿著旋轉之基板W之上表面而朝外側流動。基板W上之磷酸水溶液係藉由自淋洗液噴嘴22所被吐出之純水而被沖洗。藉此,形成有覆蓋基板W之上表面的純水之液膜。當淋洗液閥24被開啟之後而經過既定時間,則關閉淋洗液閥24,停止純水之吐出。 Next, a first eluent supply step of supplying pure water, which is one example of the eluent, to the upper surface of the substrate W is performed (step S4). Specifically, the eluent valve is opened 24, and the eluent nozzle 22 begins to spout pure water. The pure water that has been liquided to the upper surface of the substrate W flows outward along the upper surface of the rotating substrate W. The aqueous phosphoric acid solution on the substrate W is washed by the pure water discharged from the eluent nozzle 22. Thereby, a liquid film of pure water covering the upper surface of the substrate W is formed. When the eluent valve 24 is turned on and the predetermined time elapses, the eluent valve 24 is closed to stop the discharge of pure water.
在第1淋洗液供給步驟中,藉由擋板11所承接而朝杯12被導引的處理液(主要為淋洗液)係通過排液配管81而被排液。 In the first eluent supply step, the treatment liquid (mainly eluent) guided to the cup 12 by the baffle 11 is discharged through the drain pipe 81.
接著,進行將SC1供給至基板W的SC1供給步驟(步驟S5)。具體而言,第2噴嘴移動單元21係使SC1噴嘴18移動至處理位置,擋板升降單元13係使與磷酸供給步驟時為不同的擋板11與基板W對向。其後,SC1閥20被開啟,SC1噴嘴18開始吐出SC1。於SC1噴嘴18吐出SC1時,第2噴嘴移動單元21係亦可為使SC1噴嘴18在自SC1噴嘴18所被吐出之SC1著液至基板W之上表面中央的中央處理位置、及自SC1噴嘴18所被吐出之SC1著液至基板W之上表面外周部的外周處理位置之間移動。此外,亦可以SC1之著液位置位於基板W之上表面中央部之方式使SC1靜止。 Next, an SC1 supply step of supplying SC1 to the substrate W is performed (step S5). Specifically, the second nozzle moving unit 21 moves the SC1 nozzle 18 to the processing position, and the shutter raising and lowering unit 13 faces the substrate W different from the substrate W in the phosphoric acid supply step. Thereafter, the SC1 valve 20 is opened, and the SC1 nozzle 18 starts to discharge SC1. When SC1 is discharged from SC1 nozzle 18, second nozzle moving unit 21 may be a central processing position for causing SC1 nozzle 18 to be liquided from SC1 discharged from SC1 nozzle 18 to the center of the upper surface of substrate W, and from SC1 nozzle. The SC1 discharged is moved to the outer peripheral processing position of the outer peripheral portion of the upper surface of the substrate W. Further, the SC1 may be stationary such that the position of the SC1 is located at the central portion of the upper surface of the substrate W.
自SC1噴嘴18所被吐出之SC1係於著液至基板W之上表面後,沿著旋轉之基板W之上表面而流動。藉此,形成有覆蓋基板W上表面全部區域的SC1之液膜,而對基板W上表面全部區域供給SC1。當SC1閥20被開啟之後而經過既定時間,則關閉SC1閥20,停止來自SC1噴嘴18的SC1之吐出。其後,第2噴嘴移動單元21係使SC1噴嘴18移動至退避位置。 The SC1 discharged from the SC1 nozzle 18 is applied to the upper surface of the substrate W, and then flows along the upper surface of the rotating substrate W. Thereby, a liquid film of SC1 covering the entire upper surface of the substrate W is formed, and SC1 is supplied to the entire upper surface of the substrate W. When the SC1 valve 20 is turned on and the predetermined time elapses, the SC1 valve 20 is closed to stop the discharge of SC1 from the SC1 nozzle 18. Thereafter, the second nozzle moving unit 21 moves the SC1 nozzle 18 to the retracted position.
被供給至基板W上表面的SC1係藉由離心力而朝基板W之外側飛出,並被與基板W對向的擋板11所承接,而被導引往所對應之杯12。與磷酸水溶液同樣地,SC1係可朝SC1槽(未圖示)被回收而被再利用,亦可不回收而加以廢棄。 The SC1 supplied to the upper surface of the substrate W is caused to fly toward the outside of the substrate W by centrifugal force, and is guided by the baffle 11 facing the substrate W, and guided to the corresponding cup 12. Similarly to the phosphoric acid aqueous solution, the SC1 system can be recovered in the SC1 tank (not shown) and reused, or discarded without being recovered.
接著,執行將淋洗液之一例即純水供給至基板W之上表面的第2淋洗液供給步驟(步驟S6)。具體而言,淋洗液閥24被開啟,而自淋洗液噴嘴22開始吐出純水。著液至基板W之上表面的純水係沿著旋轉之基板W之上表面而朝外側流動。藉此,基板W上之SC1係藉由純水而被沖洗,形成有覆蓋基板W上表面全部區域的純水之液膜。當淋洗液閥24被開啟之後而經過既定時間,則關閉淋洗液閥24,停止純水之吐出。 Next, a second eluent supply step of supplying pure water, which is one example of the eluent, to the upper surface of the substrate W is performed (step S6). Specifically, the eluent valve 24 is opened, and pure water is discharged from the eluent nozzle 22. The pure water that has been liquided to the upper surface of the substrate W flows outward along the upper surface of the rotating substrate W. Thereby, the SC1 on the substrate W is washed by pure water to form a liquid film of pure water covering the entire upper surface of the substrate W. When the eluent valve 24 is turned on and the predetermined time elapses, the eluent valve 24 is closed to stop the discharge of pure water.
在第2淋洗液供給步驟中,藉由擋板11所承接而朝杯12被導引的處理液(主要為淋洗液)係被廢棄。 In the second eluent supply step, the treatment liquid (mainly eluent) guided to the cup 12 by the baffle 11 is discarded.
接著,藉由基板W之高速旋轉而進行使基板W乾燥的乾燥步驟(步驟S7)。具體而言,旋轉馬達9使基板W之旋轉加速,使基板W以較液處理步驟(S3~S6)時更大之旋轉速度(例如數千rpm)旋轉。藉此,基板W上之液體係藉由離心力而被除去,而基板W乾燥。當基板W之高速旋轉開始之後而經過既定時間,使旋 轉馬達9之旋轉被停止(步驟S8)。 Next, a drying step of drying the substrate W is performed by high-speed rotation of the substrate W (step S7). Specifically, the rotation motor 9 accelerates the rotation of the substrate W to rotate the substrate W at a larger rotation speed (for example, thousands of rpm) than in the liquid processing steps (S3 to S6). Thereby, the liquid system on the substrate W is removed by centrifugal force, and the substrate W is dried. When the high-speed rotation of the substrate W is started and the predetermined time elapses, the rotation is performed. The rotation of the rotary motor 9 is stopped (step S8).
其後,進行自腔室4搬出基板W的搬出步驟(步驟S9)。具體而言,擋板升降單元13使全部擋板11下降至下位置為止。其後,搬送機器人使機械手進入至腔室4內,自旋轉夾頭5拿取處理完畢之基板W而朝腔室4外進行搬出。 Thereafter, a carry-out step of carrying out the substrate W from the chamber 4 is performed (step S9). Specifically, the shutter lifting unit 13 lowers all of the shutters 11 to the lower position. Thereafter, the transfer robot causes the robot to enter the chamber 4, and takes the processed substrate W from the spin chuck 5 and carries it out of the chamber 4.
圖6是用於說明與磷酸水溶液之供給相關連之處理之流程圖。控制裝置3係開啟磷酸閥16,而朝磷酸噴嘴14供給磷酸水溶液(步驟S11)。藉此,磷酸水溶液被供給至保持於旋轉夾頭5的基板W。另一方面,控制裝置3係開啟回收閥72,關閉排液閥82。藉此,被供給至基板W的使用完畢之磷酸水溶液係經由回收配管71而朝供給槽31被回收(步驟S12)。 Fig. 6 is a flow chart for explaining a process associated with the supply of an aqueous phosphoric acid solution. The control device 3 turns on the phosphoric acid valve 16 and supplies the phosphoric acid aqueous solution to the phosphoric acid nozzle 14 (step S11). Thereby, the phosphoric acid aqueous solution is supplied to the substrate W held by the rotary chuck 5. On the other hand, the control device 3 opens the recovery valve 72 and closes the liquid discharge valve 82. Thereby, the used phosphoric acid aqueous solution supplied to the substrate W is recovered into the supply tank 31 via the recovery pipe 71 (step S12).
另一方面,控制裝置3係判斷是否滿足應開始朝供給槽31補充新液的條件(補充開始條件)(步驟S13)。具體而言,補充開始條件亦可包含有液量條件。液量條件之一具體例係下限感測器44L檢測下限值以下之液量。此外,補充開始條件亦可包含有處理數條件。處理數條件之一具體例係在不將新液補充至供給槽31之狀態下所被處理之基板W之片數到達至既定片數。進而,補充開始條件亦可包含有矽濃度條件。矽濃度條件之一具體例係自供給槽31朝向磷酸噴嘴14所被供給之磷酸水溶液中之矽濃度到達至既定濃度。亦可為,當液量條件、處理數條件及矽濃度條件中之至少一者被滿足,則控制裝置3係判斷為補充開始條件被滿足。亦可為,控制裝置3係例如以既定時間間隔(例如10分~數十分間隔)開啟閥38、39而對磷酸水溶液進行取樣而導入至矽濃度計37,藉此進行矽濃度之測量。 On the other hand, the control device 3 determines whether or not the condition (supplement start condition) at which the supply of the new liquid to the supply tank 31 is to be started is satisfied (step S13). Specifically, the supplemental start condition may also include a liquid amount condition. One of the liquid amount conditions is a specific example in which the lower limit sensor 44L detects the liquid amount below the lower limit value. In addition, the supplemental start condition may also include a processing number condition. One of the processing conditions is a specific example in which the number of substrates W to be processed reaches a predetermined number of sheets without replenishing the new liquid to the supply tank 31. Further, the supplemental start condition may also include a sputum concentration condition. Specifically, one of the enthalpy concentration conditions is that the cerium concentration in the aqueous phosphoric acid solution supplied from the supply tank 31 toward the phosphoric acid nozzle 14 reaches a predetermined concentration. Alternatively, when at least one of the liquid amount condition, the treatment number condition, and the helium concentration condition is satisfied, the control device 3 determines that the supplementary start condition is satisfied. The control device 3 may, for example, open the valves 38 and 39 at predetermined time intervals (for example, at intervals of 10 minutes to several tenths), sample the phosphoric acid aqueous solution, and introduce it into the helium concentration meter 37 to measure the enthalpy concentration.
當補充開始條件被滿足,為了自新液補充系統50將新液補充至供給槽31,控制裝置3係決定所補充之液量(步驟S14)。所補充之液體之總量係例如可為下限感測器44L所檢測之下限值與目標感測器44t所檢測之目標值的差值,此為已知之值。於藉由處理數條件或矽濃度條件之滿足而補充開始條件被滿足之時,有可能為供給槽31內之液量多於下限值之情況。於如此之情況下,亦可為,控制裝置3係開啟排放閥42而對供給槽31內之磷酸水溶液進行排液,直至供給槽31內之液量成為下限值為止。 When the replenishment start condition is satisfied, in order to replenish the new liquid to the supply tank 31 from the fresh liquid replenishing system 50, the control device 3 determines the amount of liquid to be replenished (step S14). The total amount of liquid to be replenished may be, for example, a difference between the lower limit value detected by the lower limit sensor 44L and the target value detected by the target sensor 44t, which is a known value. When the supplementary start condition is satisfied by the satisfaction of the processing number condition or the enthalpy concentration condition, there is a possibility that the liquid amount in the supply tank 31 is more than the lower limit value. In such a case, the control device 3 may open the discharge valve 42 to drain the phosphoric acid aqueous solution in the supply tank 31 until the liquid amount in the supply tank 31 becomes the lower limit value.
控制裝置3係以如下方式決定補充液量,即藉由混合供給槽31內之磷酸水溶液、在新液調合槽51所調合完畢之新液(基準矽濃度之未使用磷酸水溶液)、及磷酸原液,而使基準矽濃度(調整目標值)之磷酸水溶液貯存至供給槽31內而至目標值之液位為止。新液之補充量及磷酸原液之補充量之合計為補充之總液量,如前述,而該值為已知。此外,由於供給槽31內之液量為在下限值之狀態下進行補充,因此,在補充開始時之供給槽31內之磷酸水溶液液量亦為已知。因此,若得知在補充開始時之供給槽31內之磷酸水溶液中之矽濃度,則控制裝置3係可據此而決定新液補充量及磷酸原液補充量。換言之,可決定新液補充量與磷酸原液補充量之比。 The control device 3 determines the amount of replenishing liquid by mixing the phosphoric acid aqueous solution in the supply tank 31, the new liquid prepared in the new liquid mixing tank 51 (the unused antimonic acid aqueous solution having the reference enthalpy concentration), and the phosphate raw liquid. On the other hand, the phosphoric acid aqueous solution having the reference enthalpy concentration (adjustment target value) is stored in the supply tank 31 until the liquid level of the target value. The sum of the replenishing amount of the new liquid and the replenishing amount of the phosphoric acid stock solution is the total amount of the replenished liquid, as described above, and the value is known. Further, since the amount of liquid in the supply tank 31 is replenished in the state of the lower limit value, the amount of the phosphoric acid aqueous solution in the supply tank 31 at the start of replenishment is also known. Therefore, when the concentration of ruthenium in the aqueous phosphoric acid solution in the supply tank 31 at the start of the replenishment is known, the control device 3 can determine the amount of replenishment of the new liquid and the amount of replenishment of the phosphate stock solution. In other words, the ratio of the amount of fresh liquid replenished to the amount of phosphate stock replenished can be determined.
通過回收配管71而被回收至供給槽31的磷酸水溶液中之矽濃度係高於自磷酸閥16被供給至基板W的磷酸水溶液中之矽濃度。此係因為構成基板W之矽材料(包含有矽化合物)為溶出至磷酸水溶液中。該溶出量係配合基板W之種類而不同,且配合對基板W之處理之條件而不同。控制裝置3係可自配方R而取得該 等之資訊。 The ruthenium concentration in the phosphoric acid aqueous solution recovered in the supply tank 31 by the recovery pipe 71 is higher than the ruthenium concentration in the phosphoric acid aqueous solution supplied from the phosphoric acid valve 16 to the substrate W. This is because the ruthenium material (containing the ruthenium compound) constituting the substrate W is eluted into the phosphoric acid aqueous solution. The elution amount differs depending on the type of the substrate W, and is different depending on the conditions for the treatment of the substrate W. The control device 3 can obtain the self from the recipe R Wait for information.
此外,磷酸水溶液係通過回收配管71而被回收至供給槽31而重複地被使用,因此供給槽31內之磷酸水溶液中之矽濃度係隨著基板處理片數變多而增加。亦即,磷酸水溶液中之矽濃度係依存於處理數。控制裝置3係可藉由對已處理之基板片數進行計數,而取得與處理數相關之資訊。 Further, since the phosphoric acid aqueous solution is repeatedly collected in the supply tank 31 by the recovery pipe 71, the concentration of ruthenium in the phosphoric acid aqueous solution in the supply tank 31 increases as the number of substrates processed increases. That is, the concentration of ruthenium in the aqueous phosphoric acid solution depends on the number of treatments. The control device 3 can obtain information related to the number of processes by counting the number of processed substrates.
另一方面,供給槽31內之磷酸水溶液之矽濃度亦依存於磷酸水溶液之回收率。所謂回收率係指經由回收配管71而朝供給槽31被回收之磷酸水溶液液量而相對於自磷酸噴嘴14所吐出之磷酸水溶液液量的比例。在淋洗步驟中,由於磷酸水溶液之一部分會與淋洗液(純水)一起被排液,因而回收率為未滿100%。控制裝置3係可藉由參照配方R而獲得與回收率相關的資訊。當然,亦可操作者操作輸入裝置96而輸入與回收率相關的資訊。 On the other hand, the ruthenium concentration of the aqueous phosphoric acid solution in the supply tank 31 also depends on the recovery rate of the phosphoric acid aqueous solution. The recovery ratio refers to the ratio of the amount of the phosphoric acid aqueous solution recovered in the supply tank 31 through the recovery pipe 71 to the amount of the phosphoric acid aqueous solution discharged from the phosphoric acid nozzle 14 . In the rinsing step, since one part of the aqueous phosphoric acid solution is discharged together with the eluent (pure water), the recovery rate is less than 100%. The control device 3 can obtain information related to the recovery rate by referring to the recipe R. Of course, the operator can also operate the input device 96 to input information related to the recovery rate.
如此,控制裝置3係可從由配方R所獲得的資訊(矽之溶出量(基板W之種類及/或基板處理之條件)、回收率)、在控制基板處理裝置1之過程中所獲得的資訊(處理數)、由輸入裝置96所被輸入的資訊等,而求出補充在開始時之磷酸水溶液中之矽濃度。 Thus, the control device 3 is obtained from the information obtained by the formulation R (the amount of elution of the crucible (the type of the substrate W and/or the condition of the substrate processing), the recovery rate), and the process obtained in the process of controlling the substrate processing apparatus 1. Information (number of processes), information input by the input device 96, and the like are used to determine the concentration of germanium in the aqueous phosphoric acid solution at the beginning.
再者,被回收至供給槽31的磷酸水溶液中之矽濃度係可藉由運算而求出,亦可相對於基板W之種類、基板處理之條件、回收率、處理數等而使用對應有矽濃度值的表格來求出。此外,亦可相對於基板W之種類、基板處理之條件、回收率、處理數等而準備對應有新液補充量及磷酸原液補充量的表格。 Further, the concentration of ruthenium in the phosphoric acid aqueous solution recovered in the supply tank 31 can be determined by calculation, and the corresponding 矽 can be used with respect to the type of the substrate W, the conditions of the substrate processing, the recovery rate, the number of processes, and the like. Find the table of concentration values. Further, a table corresponding to the new liquid replenishing amount and the phosphoric acid stock replenishing amount may be prepared with respect to the type of the substrate W, the conditions of the substrate processing, the recovery rate, the number of processes, and the like.
藉此,控制裝置3係決定新液補充量及磷酸原液補充 量(步驟S14)。而且,控制裝置3係開啟新液補充閥53,驅動泵54,而自新液調合槽51朝供給槽31補充新液(步驟S15)。該補充量係利用積算流量計61被測量。當積算流量計61之測量值到達至新液補充量(步驟S16),控制裝置3係停止泵54並關閉新液補充閥53(步驟S17)。此外,控制裝置3係開啟磷酸原液補充閥60,使磷酸原液經由磷酸原液補充配管59而朝供給槽31被補充(步驟S18)。該補充量係利用積算流量計62被測量。當積算流量計62之測量值到達至磷酸原液補充量(步驟S19),控制裝置3係關閉磷酸原液補充閥60,使磷酸原液之補充停止(步驟S20)。 Thereby, the control device 3 determines the amount of new liquid replenishment and the phosphate solution supplement Amount (step S14). Further, the control device 3 opens the new liquid replenishing valve 53, drives the pump 54, and replenishes the new liquid from the new liquid mixing tank 51 toward the supply tank 31 (step S15). This replenishment amount is measured using the integrated flow meter 61. When the measured value of the integrated flow meter 61 reaches the new liquid replenishing amount (step S16), the control device 3 stops the pump 54 and closes the new liquid replenishing valve 53 (step S17). Further, the control device 3 opens the phosphate raw material replenishing valve 60, and the phosphate raw material solution is replenished to the supply tank 31 via the phosphoric acid stock solution replenishing pipe 59 (step S18). This replenishment amount is measured using the integrated flow meter 62. When the measured value of the integrated flow meter 62 reaches the phosphoric acid stock replenishing amount (step S19), the control device 3 closes the phosphoric acid stock replenishing valve 60 to stop the replenishment of the phosphoric acid stock solution (step S20).
如上述,根據本實施形態,藉由使用磷酸水溶液而處理基板W,選擇性地蝕刻在基板W之表面所露出之氮化矽膜Fn。於磷酸水溶液中所被包含之矽之濃度係被控制在規定矽濃度範圍,藉此,可抑制在基板W之表面所露出之氧化矽膜Fo之蝕刻,據此,可提高氮化矽膜Fn之選擇比。 As described above, according to the present embodiment, the substrate W is processed by using an aqueous phosphoric acid solution, and the tantalum nitride film Fn exposed on the surface of the substrate W is selectively etched. The concentration of ruthenium contained in the aqueous phosphoric acid solution is controlled to a predetermined ruthenium concentration range, whereby etching of the ruthenium oxide film Fo exposed on the surface of the substrate W can be suppressed, whereby the tantalum nitride film Fn can be improved. The choice ratio.
磷酸水溶液係自供給槽31朝磷酸噴嘴14供給,而自磷酸噴嘴14被供給至基板W。被使用在基板W之處理中的使用完畢磷酸水溶液係朝供給槽31被回收。當既定之補充開始條件被滿足(步驟S13:滿足),則將在基準矽濃度包含有矽的新液及矽濃度為零的磷酸原液補充至供給槽31。藉由適當地決定新液及磷酸原液各自之補充量,可將供給槽31內之磷酸水溶液之矽濃度控制在規定矽濃度範圍。 The phosphoric acid aqueous solution is supplied from the supply tank 31 to the phosphoric acid nozzle 14 and is supplied from the phosphoric acid nozzle 14 to the substrate W. The used phosphoric acid aqueous solution used in the processing of the substrate W is recovered in the supply tank 31. When the predetermined supplemental start condition is satisfied (step S13: satisfied), the new stock containing the ruthenium at the reference ruthenium concentration and the phosphate stock solution having the ruthenium concentration of zero are replenished to the supply tank 31. By appropriately determining the respective replenishing amounts of the new liquid and the phosphoric acid stock solution, the rhodium concentration of the phosphoric acid aqueous solution in the supply tank 31 can be controlled to a predetermined crucible concentration range.
基準矽濃度之新液及磷酸原液係預先準備,於需要時僅以需要量而供給至供給槽31,藉此可將供給槽31內之磷酸水溶液之矽濃度調整為規定矽濃度範圍(較佳為基準矽濃度)。因而,不 需要用於將磷酸水溶液朝供給槽31補充的等待時間,因此不會損及基板處理之生產性,並可將穩定之矽濃度之磷酸水溶液供給至基板W。 The new liquid and the phosphoric acid raw liquid of the reference enthalpy concentration are prepared in advance, and are supplied to the supply tank 31 only in a required amount as needed, whereby the cerium concentration of the phosphoric acid aqueous solution in the supply tank 31 can be adjusted to a predetermined cerium concentration range (preferably As the reference concentration). Thus, no Since the waiting time for replenishing the phosphoric acid aqueous solution to the supply tank 31 is required, the productivity of the substrate treatment is not impaired, and a stable aqueous solution of phosphoric acid having a helium concentration can be supplied to the substrate W.
而且,由於只要預先準備基準矽濃度之新液及磷酸原液即可,因此不需要即時地控制磷酸水溶液之矽濃度的構成。如上述,貯存在供給槽31的磷酸水溶液及新液之矽濃度係可藉由矽濃度計37而進行確認。然而,矽濃度計37並非為必須之構成,不需要即時地監視磷酸水溶液中之矽濃度的構成。因此,可以廉價之構成而將穩定之矽濃度之磷酸水溶液供給至基板W。 Further, since it is only necessary to prepare a new liquid having a reference enthalpy concentration and a phosphate stock solution in advance, it is not necessary to immediately control the erbium concentration of the phosphoric acid aqueous solution. As described above, the concentration of the phosphoric acid aqueous solution and the new liquid stored in the supply tank 31 can be confirmed by the krypton concentration meter 37. However, the cerium concentration meter 37 is not an essential configuration, and it is not necessary to immediately monitor the composition of the cerium concentration in the aqueous phosphoric acid solution. Therefore, it is possible to supply a stable aqueous solution of phosphoric acid having a stable concentration to the substrate W at a low cost.
此外,在本實施形態中,自新液調合槽51被供給至供給槽31的新液係具有規定矽濃度範圍內之矽濃度(更具體而言為基準矽濃度)。因此,藉由新液之供給而容易地將供給槽31內之磷酸水溶液之矽濃度導向至規定矽濃度範圍內之值。而且,於最初將磷酸水溶液貯存在供給槽31時,只要僅將在新液調合槽51所被調合之新液供給至供給槽31即可。藉此,可不經過用以謀求濃度之均勻化的待機時間,而直接將貯存在供給槽31內的磷酸水溶液迅速地使用在基板W之處理。 Further, in the present embodiment, the new liquid system supplied from the new liquid mixing tank 51 to the supply tank 31 has a helium concentration (more specifically, a reference helium concentration) within a predetermined concentration range. Therefore, the cerium concentration of the phosphoric acid aqueous solution in the supply tank 31 is easily guided to a value within a predetermined erbium concentration range by the supply of the new liquid. Further, when the phosphoric acid aqueous solution is first stored in the supply tank 31, only the new liquid to be blended in the new liquid mixing tank 51 may be supplied to the supply tank 31. Thereby, the phosphoric acid aqueous solution stored in the supply tank 31 can be quickly used in the processing of the substrate W without going through the standby time for achieving uniformization of the concentration.
而且,可經由磷酸原液補充配管59而將矽濃度為零之磷酸原液補充至供給槽31,因此可容易地將供給槽31內之磷酸水溶液之矽濃度導向至規定矽濃度範圍內之值。尤其,在基板W含有矽之情況時,藉由將磷酸水溶液供給至基板W,而基板材料之矽溶出至磷酸水溶液中,因此,被回收至供給槽31的磷酸水溶液之濃度係變得較供給至基板W之前更高。於此,藉由將以較規定矽濃度範圍低之濃度(在本實施形態中為零)而包含有矽的磷酸原液 供給至供給槽31,而可容易地將供給槽31內之磷酸水溶液之矽濃度導向至規定矽濃度範圍。 Further, since the phosphate raw material having a niobium concentration of zero can be replenished to the supply tank 31 via the phosphate stock solution replenishing pipe 59, the niobium concentration of the phosphoric acid aqueous solution in the supply tank 31 can be easily guided to a value within a predetermined niobium concentration range. In particular, when the substrate W contains ruthenium, the phosphoric acid aqueous solution is supplied to the substrate W, and the ruthenium of the substrate material is eluted into the phosphoric acid aqueous solution. Therefore, the concentration of the phosphoric acid aqueous solution recovered in the supply tank 31 becomes higher. It is higher before the substrate W. Here, the phosphate stock solution containing ruthenium is contained by a concentration lower than the predetermined ruthenium concentration range (zero in the present embodiment). The supply to the supply tank 31 can easily guide the ruthenium concentration of the phosphoric acid aqueous solution in the supply tank 31 to a predetermined ruthenium concentration range.
此外,在本實施形態中,基於基板W之種類而決定新液及磷酸原液之朝供給槽31的補充量。可基於基板W之種類而預測在基板處理之前後的磷酸水溶液中之矽濃度的變動。於此,可基於基板W之種類,而決定新液及磷酸原液之各補充量,藉此適當地調整供給槽31內之磷酸水溶液之矽濃度。 Further, in the present embodiment, the amount of replenishment of the new liquid and the phosphoric acid stock solution into the supply tank 31 is determined based on the type of the substrate W. The fluctuation of the ruthenium concentration in the aqueous phosphoric acid solution after the substrate treatment can be predicted based on the type of the substrate W. Here, the respective amounts of the fresh liquid and the phosphoric acid stock solution can be determined based on the type of the substrate W, whereby the germanium concentration of the phosphoric acid aqueous solution in the supply tank 31 can be appropriately adjusted.
依據基板W之種類等,藉由利用磷酸水溶液所進行之處理而自基板W所溶出之矽的量不同。矽溶出量係大幅度地影響被回收之磷酸水溶液中之矽濃度。於此,根據基板W之種類等而對自基板W所溶出之矽之量進行特定,基於其之所被特定之矽溶出量而決定新液及磷酸原液之各補充量,藉此可適當地調整供給槽31內之磷酸水溶液之矽濃度。 The amount of ruthenium eluted from the substrate W by the treatment with the phosphoric acid aqueous solution differs depending on the type of the substrate W or the like. The amount of cesium dissolved greatly affects the concentration of ruthenium in the recovered aqueous phosphoric acid solution. Here, the amount of the ruthenium eluted from the substrate W is specified depending on the type of the substrate W, etc., and the respective amounts of the new liquid and the phosphoric acid stock solution are determined based on the specific amount of enthalpy eluted, thereby appropriately The ruthenium concentration of the aqueous phosphoric acid solution in the supply tank 31 is adjusted.
此外,在本實施形態中,根據從磷酸噴嘴14被供給至基板W之磷酸水溶液中被回收至供給槽31的磷酸水溶液之回收率,而決定新液及磷酸原液之供給量。藉此,可一面將需要量之磷酸水溶液補充至供給槽31,一面將供給槽31內之磷酸水溶液之矽濃度調整至規定矽濃度範圍。 Further, in the present embodiment, the supply amount of the fresh liquid and the phosphoric acid stock solution is determined based on the recovery rate of the phosphoric acid aqueous solution recovered in the supply tank 31 from the phosphoric acid aqueous solution supplied from the phosphoric acid nozzle 14 to the substrate W. Thereby, the erbium concentration of the phosphoric acid aqueous solution in the supply tank 31 can be adjusted to a predetermined erbium concentration range while the required amount of the phosphoric acid aqueous solution is replenished to the supply tank 31.
此外,在本實施形態中,基於自磷酸噴嘴14所供給之磷酸水溶液而藉此被處理之基板W的片數(處理數),決定新液及磷酸原液之各補充量。藉此,可適當地調整供給槽31內之磷酸水溶液之矽濃度。 Further, in the present embodiment, the respective amounts of the fresh liquid and the phosphoric acid stock solution are determined based on the number of sheets (the number of processes) of the substrate W to be processed by the phosphoric acid aqueous solution supplied from the phosphoric acid nozzle 14. Thereby, the ruthenium concentration of the phosphoric acid aqueous solution in the supply tank 31 can be appropriately adjusted.
此外,在本實施形態中,上述之補充開始條件係包含與貯存在供給槽31之液量相關的液量條件。具體而言,將貯存在 供給槽31的液量減少至下限值為止之情形作為觸發條件,而補充新液及磷酸原液。藉此,當供給槽31內之液量減少至下限值為止時,則補充新液及磷酸原液而使液量回復,同時地,調整矽濃度。 Further, in the present embodiment, the above-described supplementary start condition includes a liquid amount condition relating to the amount of liquid stored in the supply tank 31. Specifically, it will be stored in When the amount of liquid in the supply tank 31 is reduced to the lower limit value, the new liquid and the phosphate raw liquid are replenished as a trigger condition. Thereby, when the amount of liquid in the supply tank 31 is reduced to the lower limit value, the new liquid and the phosphoric acid raw liquid are replenished to restore the liquid amount, and the enthalpy concentration is adjusted.
此外,在本實施形態中,上述補充開始條件係包含與藉由自磷酸噴嘴14所供給之磷酸水溶液而被處理之基板W的片數相關的處理數條件。亦即,當被處理之基板W之片數達到既定數時,將其作為觸發條件,而將新液及磷酸原液補充至供給槽31。藉此,可利用穩定之矽濃度之磷酸水溶液而處理基板W。 Further, in the present embodiment, the supplementary start condition includes a number of processing conditions relating to the number of substrates W to be processed by the phosphoric acid aqueous solution supplied from the phosphoric acid nozzle 14. That is, when the number of sheets of the substrate W to be processed reaches a predetermined number, it is used as a trigger condition, and the new liquid and the phosphoric acid stock solution are replenished to the supply tank 31. Thereby, the substrate W can be treated with a stable aqueous solution of phosphoric acid.
此外,在本實施形態中,上述補充開始條件係包含與自供給槽31朝向磷酸噴嘴14所被供給之磷酸水溶液中之矽濃度相關的矽濃度條件。具體而言,定期地利用矽濃度計37測量通過循環配管32而被循環調溫之磷酸水溶液中之矽濃度。當該測量值上升至既定值為止時,則將其作為觸發條件,而將新液及磷酸原液補充至供給槽31。藉此,供給槽31之磷酸水溶液之矽濃度回復至規定矽濃度範圍,因此,可利用穩定之矽濃度之磷酸水溶液進行處理基板W。 Further, in the present embodiment, the supplementary start condition includes a enthalpy concentration condition relating to the erbium concentration in the phosphoric acid aqueous solution supplied from the supply tank 31 toward the phosphoric acid nozzle 14. Specifically, the concentration of ruthenium in the aqueous phosphoric acid solution which is cyclically tempered by the circulation pipe 32 is periodically measured by the helium concentration meter 37. When the measured value rises to a predetermined value, it is used as a trigger condition, and the new liquid and the phosphoric acid stock solution are replenished to the supply tank 31. Thereby, since the ruthenium concentration of the phosphoric acid aqueous solution in the supply tank 31 is returned to the predetermined erbium concentration range, the substrate W can be treated with a stable cesium concentration phosphoric acid aqueous solution.
此外,在本實施形態中,基板W係一片一片地被旋轉夾頭5水平地保持而加以處理。於如此之所謂單片型之處理中,正確地調整自磷酸噴嘴14所被吐出之磷酸水溶液中之矽濃度係屬重要。當矽濃度之調整不充分時,則在所被處理之複數片基板W之間存在有處理品質不均之虞。在本實施形態之處理中,正確且穩定地控制自供給槽31供給至磷酸噴嘴14之磷酸水溶液中之矽濃度,因此,可達成處理品質不均為較少之基板處理。 Further, in the present embodiment, the substrates W are horizontally held by the rotary chuck 5 one by one and processed. In such a so-called monolithic process, it is important to accurately adjust the concentration of ruthenium in the aqueous phosphoric acid solution discharged from the phosphoric acid nozzle 14. When the adjustment of the erbium concentration is insufficient, there is a problem that the processing quality is uneven between the plurality of substrates W to be processed. In the process of the present embodiment, the concentration of germanium in the phosphoric acid aqueous solution supplied from the supply tank 31 to the phosphoric acid nozzle 14 is accurately and stably controlled. Therefore, substrate processing with less processing quality can be achieved.
此外,在本實施形態中,利用積算流量計61測量朝 供給槽31的新液補充量,利用積算流量計62測量朝供給槽31的磷酸原液補充量。控制裝置3係基於積算流量計61、62之測量結果而管理新液補充量及磷酸原液補充量。藉此,可正確地調整供給槽31內之磷酸水溶液中之矽濃度。 Further, in the present embodiment, the measurement is performed by the integrated flow meter 61. The new liquid replenishing amount of the supply tank 31 is measured by the integrated flow meter 62 to measure the amount of the phosphate raw liquid replenishment to the supply tank 31. The control device 3 manages the new liquid replenishing amount and the phosphoric acid stock replenishing amount based on the measurement results of the integrated flow meters 61 and 62. Thereby, the concentration of ruthenium in the aqueous phosphoric acid solution in the supply tank 31 can be accurately adjusted.
圖7是用於說明本發明之第2實施形態之基板處理裝置1之構成之示意圖,而主要顯示磷酸供給系統30之構成。於圖7中,與圖2對應之部分係以相同參考符號表示。 FIG. 7 is a schematic view showing the configuration of the substrate processing apparatus 1 according to the second embodiment of the present invention, and mainly shows the configuration of the phosphoric acid supply system 30. In FIG. 7, parts corresponding to those in FIG. 2 are denoted by the same reference symbols.
本基板處理裝置1之磷酸供給系統30係具備有:第1回收槽90A、及第2回收槽90B。回收配管71係分歧為2個回收支管71A、71B。第1回收支管71A係連接於第1回收槽90A,第2回收支管71B係連接於第2回收槽90B。於第1回收支管71A及第2回收支管71B介設有第1回收閥72A及第2回收閥72B。藉由開啟第1回收閥72A且關閉第2回收閥72B,將用於基板處理而被使用之使用完畢磷酸水溶液回收至第1回收槽90A。藉由關閉第1回收閥72A且開啟第2回收閥72B,將使用完畢磷酸水溶液回收至第2回收槽90B。控制裝置3係藉由控制第1及第2回收閥72A、72B之開閉,而將使用完畢磷酸水溶液之回收目的地選擇為第1回收槽90A及第2回收槽90B中之一者(回收目的地選擇步驟)。 The phosphoric acid supply system 30 of the substrate processing apparatus 1 includes a first recovery tank 90A and a second recovery tank 90B. The recovery pipe 71 is divided into two recovery branch pipes 71A and 71B. The first recovery branch pipe 71A is connected to the first recovery tank 90A, and the second recovery branch pipe 71B is connected to the second recovery tank 90B. The first recovery valve 72A and the second recovery valve 72B are interposed between the first recovery branch pipe 71A and the second recovery branch pipe 71B. By opening the first recovery valve 72A and closing the second recovery valve 72B, the used phosphoric acid aqueous solution used for substrate processing is recovered in the first recovery tank 90A. By closing the first recovery valve 72A and opening the second recovery valve 72B, the used phosphoric acid aqueous solution is recovered to the second recovery tank 90B. The control device 3 controls the opening and closing of the first and second recovery valves 72A and 72B, and selects the recovery destination of the used phosphoric acid aqueous solution as one of the first recovery tank 90A and the second recovery tank 90B (recycling purpose) Ground selection step).
另一方面,貯存在第1回收槽90A及第2回收槽90B的磷酸水溶液係經由補充配管100(調合液供給配管)而補充至供給槽31。補充配管100之下游端係連接於供給槽31。補充配管100之上游端係分歧為第1支管100A及第2支管100B。第1支管100A係連接於第1回收槽90A,第2支管100B係連接於第2回收槽90B。於第1支管100A及第2支管100B介設有第1補充閥101A及第2 補充閥101B。於補充配管100介設有泵102及加熱器103。 On the other hand, the phosphoric acid aqueous solution stored in the first recovery tank 90A and the second recovery tank 90B is replenished to the supply tank 31 via the supplementary piping 100 (mixing liquid supply piping). The downstream end of the supplementary pipe 100 is connected to the supply tank 31. The upstream end of the supplementary pipe 100 is divided into a first branch pipe 100A and a second branch pipe 100B. The first branch pipe 100A is connected to the first recovery tank 90A, and the second branch pipe 100B is connected to the second recovery tank 90B. The first supplemental valve 101A and the second section are interposed between the first branch pipe 100A and the second branch pipe 100B. The valve 101B is replenished. A pump 102 and a heater 103 are interposed in the supplementary pipe 100.
若在開啟第1補充閥101A且關閉第2補充閥101B之狀態下驅動泵102,則可自第1回收槽90A朝供給槽31供給磷酸水溶液。若在關閉第1補充閥101A且開啟第2補充閥101B之狀態下驅動泵102,則可自第2回收槽90B朝供給槽31供給磷酸水溶液。於通過補充配管100時,磷酸水溶液係藉由加熱器103而被加熱。因此,可將經溫度調節之磷酸水溶液供給至供給槽31。 When the pump 102 is driven in a state where the first replenishing valve 101A is opened and the second replenishing valve 101B is closed, the phosphoric acid aqueous solution can be supplied from the first recovery tank 90A to the supply tank 31. When the pump 102 is driven in a state where the first replenishing valve 101A is closed and the second replenishing valve 101B is opened, the phosphoric acid aqueous solution can be supplied from the second recovery tank 90B to the supply tank 31. When the pipe 100 is replenished, the phosphoric acid aqueous solution is heated by the heater 103. Therefore, the temperature-adjusted aqueous phosphoric acid solution can be supplied to the supply tank 31.
控制裝置3係藉由控制第1及第2補充閥101A、101B之開閉而將朝供給槽31的磷酸水溶液補充來源選擇為第1回收槽90A及第2回收槽90B之任一者。更具體而言,控制裝置3係將作為使用完畢磷酸水溶液之回收目的地而未被選擇的回收槽90A、90B,選擇作為朝供給槽31的補充來源(補充來源選擇步驟)。 The control device 3 selects one of the first recovery tank 90A and the second recovery tank 90B by controlling the opening and closing of the first and second supplementary valves 101A and 101B to supplement the source of the phosphoric acid aqueous solution to the supply tank 31. More specifically, the control device 3 selects the recovery tanks 90A and 90B that are not selected as the recovery destinations of the used phosphoric acid aqueous solution as a supplementary source to the supply tank 31 (supplement source selection step).
自新液調合槽51所被供給之新液所流動的新液補充配管52係分歧為第1支管52A及第2支管52B。第1支管52A係連接於第1回收槽90A,第2支管52B係連接於第2回收槽90B。於第1支管52A及第2支管52B係分別介設有第1新液補充閥53A及第2新液補充閥53B。 The new liquid supply pipe 52 through which the new liquid supplied from the fresh liquid mixing tank 51 flows is divided into the first branch pipe 52A and the second branch pipe 52B. The first branch pipe 52A is connected to the first recovery tank 90A, and the second branch pipe 52B is connected to the second recovery tank 90B. The first new liquid replenishing valve 53A and the second new liquid replenishing valve 53B are respectively disposed in the first branch pipe 52A and the second branch pipe 52B.
藉由開啟第1新液補充閥53A,可將在新液調合槽51所被調合之新液(基準矽濃度之未使用之磷酸水溶液)供給至第1回收槽90A。同樣地,藉由開啟第2新液補充閥53B,可將在新液調合槽51所被調合之新液供給至第2回收槽90B。 By opening the first fresh liquid replenishing valve 53A, the new liquid (the unused phosphoric acid aqueous solution having the reference enthalpy concentration) to be blended in the new liquid mixing tank 51 can be supplied to the first recovery tank 90A. Similarly, by opening the second fresh liquid replenishing valve 53B, the new liquid to be blended in the new liquid mixing tank 51 can be supplied to the second recovery tank 90B.
磷酸原液補充配管59係分歧為第1支管59A及第2支管59B。第1支管59A係連接於第1回收槽90A,第2支管59B係連接於第2回收槽90B。於第1支管59A及第2支管59B分別介 設有第1磷酸原液補充閥60A及第2磷酸原液補充閥60B。藉由開啟第1磷酸原液補充閥60A,可將磷酸原液(未含矽之磷酸水溶液)供給至第1回收槽90A。同樣地,藉由開啟第2磷酸原液補充閥60B,可將磷酸原液供給至第2回收槽90B。 The phosphate stock replenishing pipe 59 is divided into a first branch pipe 59A and a second branch pipe 59B. The first branch pipe 59A is connected to the first recovery tank 90A, and the second branch pipe 59B is connected to the second recovery tank 90B. The first branch pipe 59A and the second branch pipe 59B are respectively introduced. The first phosphate raw material replenishing valve 60A and the second phosphoric acid raw material replenishing valve 60B are provided. By opening the first phosphate stock solution replenishing valve 60A, the phosphate stock solution (aqueous phosphoric acid solution not containing ruthenium) can be supplied to the first recovery tank 90A. Similarly, the phosphoric acid stock solution can be supplied to the second recovery tank 90B by opening the second phosphoric acid stock solution replenishing valve 60B.
控制裝置3係藉由控制第1及第2新液補充閥53A、53B以及第1及第2磷酸原液補充閥60A、60B之開閉,而將新液及磷酸原液之補充目的地選擇為第1回收槽90A及第2回收槽90B中之任一者。更具體而言,控制裝置3係將作為使用完畢磷酸水溶液之回收目的地而被選擇的回收槽90A、90B,選擇作為新液及磷酸原液之補充目的地(供給目的地選擇步驟)。 The control device 3 controls the opening and closing of the first and second fresh liquid replenishing valves 53A and 53B and the first and second phosphoric acid replenishing valves 60A and 60B, and selects the replenishment destination of the new liquid and the phosphoric acid raw liquid as the first. Any one of the recovery tank 90A and the second recovery tank 90B. More specifically, the control device 3 selects the recovery tanks 90A and 90B selected as the collection destinations of the used phosphoric acid aqueous solution as the replenishment destinations of the new liquid and the phosphoric acid raw liquid (supply destination selection step).
為了分別對第1及第2回收槽90A、90B內之磷酸水溶液進行排液,具備有第1及第2排放系統45A、45B。排放系統45A、45B係包含有:排放配管46A、46B,該等係排出回收槽90A、90B內之磷酸水溶液;及排放閥47A、47B,該等係介設於排放配管46A、46B。於排放配管46A、46B亦可介設有用以調整磷酸水溶液之排出流量的排放流量調整閥。 In order to discharge the phosphoric acid aqueous solution in the first and second recovery tanks 90A and 90B, respectively, first and second discharge systems 45A and 45B are provided. The discharge systems 45A and 45B include discharge pipes 46A and 46B which discharge the phosphoric acid aqueous solution in the recovery tanks 90A and 90B, and discharge valves 47A and 47B which are disposed in the discharge pipes 46A and 46B. A discharge flow rate adjustment valve for adjusting the discharge flow rate of the phosphoric acid aqueous solution may be disposed in the discharge pipes 46A and 46B.
藉由排放閥47A、47B開啟,回收槽90A、90B內之磷酸水溶液係被排出至排放配管46A、46B。藉此,可配合需要而減少回收槽90A、90B內之磷酸水溶液之量,或對回收槽90A、90B內之全部之磷酸水溶液進行排液。 When the discharge valves 47A and 47B are opened, the phosphoric acid aqueous solution in the recovery tanks 90A and 90B is discharged to the discharge pipes 46A and 46B. Thereby, the amount of the phosphoric acid aqueous solution in the recovery tanks 90A and 90B can be reduced as needed, or all of the phosphoric acid aqueous solutions in the recovery tanks 90A and 90B can be drained.
為了檢測貯存在第1及第2回收槽90A、90B之液量,具備有:下限液量感測器75A、75B、回收停止液量感測器76A、76B、及目標液量感測器77A、77B。於藉由自回收槽90A、90B朝供給槽31供給磷酸水溶液而使回收槽90A、90B內之液量減少時, 下限液量感測器75A、75B係檢測達到至下限液量。於使用完畢磷酸水溶液被回收至回收槽90A、90B而使回收槽90A、90B內之液量增加時,回收停止液量感測器76A、76B係檢測達到至回收上限液量。於自新液補充系統50將未使用之磷酸水溶液補充至回收槽90A、90B而使回收槽90A、90B內之液量增加時,目標液量感測器77A、77B係檢測達到至應停止補充之液量(目標液量)。 In order to detect the amount of liquid stored in the first and second recovery tanks 90A and 90B, the lower limit liquid amount sensors 75A and 75B, the recovery stop liquid amount sensors 76A and 76B, and the target liquid amount sensors 77A and 77B are provided. When the phosphoric acid aqueous solution is supplied from the recovery tanks 90A and 90B to the supply tank 31 to reduce the amount of liquid in the recovery tanks 90A and 90B, The lower limit liquid amount sensors 75A, 75B detect the reaching of the lower limit liquid amount. When the used phosphoric acid aqueous solution is recovered in the recovery tanks 90A and 90B and the amount of liquid in the recovery tanks 90A and 90B is increased, the recovery stop amount sensors 76A and 76B detect the amount of liquid to be recovered to the upper limit. When the unused aqueous phosphoric acid solution is replenished to the recovery tanks 90A, 90B in the fresh liquid replenishing system 50 to increase the amount of liquid in the recovery tanks 90A, 90B, the target liquid amount sensors 77A, 77B are detected until they are to be stopped. Liquid volume (target liquid volume).
再者,在本實施形態中,於循環配管32介設有閥29。於圖2所示之構成中,亦可設置如此般之閥29。閥29係藉由控制裝置3而開閉。 Further, in the present embodiment, the valve 29 is interposed in the circulation pipe 32. In the configuration shown in Fig. 2, a valve 29 as such can also be provided. The valve 29 is opened and closed by the control device 3.
圖8是用於說明圖7之構成之基板處理裝置1之電性構成之方塊圖。於圖8中,與上述圖3對應之部分係以相同參考符號表示。控制裝置3係控制處理單元2及磷酸供給系統30。關於磷酸供給系統30,控制裝置3係控制泵33、54、102,控制加熱器34、103,及控制閥38、39、42、53A、53B、56、58、60A、60B、64、65、72A、72B。此外,於控制裝置3被輸入有供給槽31之液量感測器44之輸出信號、濃度計37之輸出信號、積算流量計61、62之輸出信號、及回收槽90A、90B之液量感測器75A、75B、76A、76B、77A、77B之輸出信號。 Fig. 8 is a block diagram for explaining an electrical configuration of the substrate processing apparatus 1 of the configuration of Fig. 7. In FIG. 8, portions corresponding to those of FIG. 3 described above are denoted by the same reference symbols. The control device 3 controls the processing unit 2 and the phosphoric acid supply system 30. Regarding the phosphoric acid supply system 30, the control device 3 controls the pumps 33, 54, 102, controls the heaters 34, 103, and controls the valves 38, 39, 42, 53A, 53B, 56, 58, 60A, 60B, 64, 65, 72A, 72B. Further, an output signal of the liquid amount sensor 44 of the supply tank 31, an output signal of the concentration meter 37, an output signal of the integrated flow meters 61, 62, and a liquid amount sensor of the recovery tanks 90A, 90B are input to the control device 3. Output signals of 75A, 75B, 76A, 76B, 77A, 77B.
圖9、圖10及圖11是用於說明與磷酸水溶液之供給相關連之處理之流程圖。圖9係表示與朝基板W供給磷酸水溶液及朝供給槽31補充磷酸水溶液相關之動作,圖10係表示與使用完畢磷酸之回收目的地之選擇及朝供給槽31之磷酸水溶液補充來源之選擇相關之動作,圖11係表示與新液對回收槽90A、90B之補充相關之動作。 9, 10 and 11 are flowcharts for explaining processing associated with supply of an aqueous phosphoric acid solution. Fig. 9 shows an operation related to the supply of the phosphoric acid aqueous solution to the substrate W and the addition of the phosphoric acid aqueous solution to the supply tank 31. Fig. 10 shows the selection of the recovery destination of the used phosphoric acid and the selection of the source of the phosphoric acid aqueous solution to the supply tank 31. The operation of Fig. 11 shows the operation related to the replenishment of the new liquid to the recovery tanks 90A, 90B.
首先,參照圖9,控制裝置3係開啟磷酸閥16而朝磷酸噴嘴14供給磷酸水溶液(步驟S21)。藉此,將磷酸水溶液供給至保持於旋轉夾頭5的基板W。藉由磷酸水溶液之供給而供給槽31內之磷酸水溶液之液量減少。接著,當藉由下限感測器44L檢測供給槽31內之磷酸水溶液之液量成為下限值時(步驟S22:YES),控制裝置3係自作為磷酸水溶液補充來源而被選擇之任一回收槽90A、90B朝供給槽31補充磷酸水溶液(步驟S23)。即,控制裝置3開啟與作為補充來源而被選擇之任一回收槽90A、90B對應的補充閥101A、101B,並驅動泵102。當藉由目標感測器44t檢測因該補充動作而供給槽31內之磷酸水溶液之液量達到至目標值時(步驟S24:YES),控制裝置3係結束補充動作(步驟S25)。藉由重複同樣之動作,供給槽31內之磷酸水溶液之液量係維持在下限值與目標值之間之適當範圍。 First, referring to Fig. 9, the control device 3 turns on the phosphoric acid valve 16 to supply the phosphoric acid aqueous solution to the phosphoric acid nozzle 14 (step S21). Thereby, the phosphoric acid aqueous solution is supplied to the substrate W held by the rotary chuck 5. The amount of the phosphoric acid aqueous solution supplied to the tank 31 by the supply of the phosphoric acid aqueous solution is reduced. Next, when the liquid amount of the phosphoric acid aqueous solution in the supply tank 31 is detected by the lower limit sensor 44L to be the lower limit value (step S22: YES), the control device 3 is selected from any one selected as a supplementary source of the phosphoric acid aqueous solution. The grooves 90A and 90B are supplied with a phosphoric acid aqueous solution to the supply tank 31 (step S23). That is, the control device 3 turns on the replenishing valves 101A, 101B corresponding to any of the recovery tanks 90A, 90B selected as the supplementary source, and drives the pump 102. When the target sensor 44t detects that the amount of the phosphoric acid aqueous solution in the supply tank 31 has reached the target value due to the replenishing operation (step S24: YES), the control device 3 ends the replenishing operation (step S25). By repeating the same operation, the amount of the phosphoric acid aqueous solution in the supply tank 31 is maintained in an appropriate range between the lower limit value and the target value.
其次,參照圖10,控制裝置3係將用於基板處理而被使用之使用完畢磷酸水溶液之回收目的地選擇為回收槽90A、90B之任一者(步驟S31),並將該等之中之另一者選擇作為朝供給槽31的磷酸水溶液補充來源(步驟S32)。 Next, referring to Fig. 10, the control device 3 selects the recovery destination of the used phosphoric acid aqueous solution used for the substrate processing as one of the recovery tanks 90A and 90B (step S31), and among them The other is selected as a supplemental source of the phosphoric acid aqueous solution toward the supply tank 31 (step S32).
即,與作為回收目的地而被選擇之回收槽90A、90B對應之回收閥72A、72B被開啟,與作為回收目的地而未被選擇之回收槽90A、90B對應之回收閥72A、72B被關閉。此外,於需要朝供給槽31補充磷酸水溶液時(圖9之步驟S22),與作為磷酸水溶液補充來源而被選擇之回收槽90A、90B對應之補充閥101A、101B被開啟,與作為磷酸水溶液補充來源而被未選擇之回收槽90A、90B對應之補充閥101A、101B保持為閉狀態。 In other words, the recovery valves 72A and 72B corresponding to the recovery tanks 90A and 90B selected as the recovery destinations are opened, and the recovery valves 72A and 72B corresponding to the recovery tanks 90A and 90B which are not selected as the recovery destinations are closed. . Further, when it is necessary to supply the phosphoric acid aqueous solution to the supply tank 31 (step S22 in Fig. 9), the replenishing valves 101A and 101B corresponding to the recovery tanks 90A and 90B selected as the source of the phosphoric acid aqueous solution are opened, and are supplemented as a phosphoric acid aqueous solution. The replenishing valves 101A and 101B corresponding to the uncollected recovery tanks 90A and 90B are kept in a closed state.
進而,當與作為補充來源而被選擇之回收槽90A、90B對應之下限液量感測器75A、75B檢測該回收槽90A、90B之液量減少至下限液量為止時(步驟S33:YES),控制裝置3係切換回收目的地與磷酸水溶液補充來源(步驟S31、S32)。即,將液量減少至下限液量為止之回收槽90A、90B選擇作為回收目的地(步驟S31),將另一者之回收槽90A、90B選擇作為磷酸水溶液補充來源(步驟S32)。 Further, when the lower limit liquid amount sensors 75A and 75B corresponding to the recovery tanks 90A and 90B selected as the supplementary sources detect that the liquid amounts of the recovery tanks 90A and 90B are reduced to the lower limit liquid amount (step S33: YES), The control device 3 switches the recovery destination and the phosphoric acid aqueous solution supplement source (steps S31 and S32). In other words, the recovery tanks 90A and 90B until the liquid amount is reduced to the lower limit liquid amount are selected as the recovery destinations (step S31), and the other recovery tanks 90A and 90B are selected as the phosphoric acid aqueous solution supplement source (step S32).
藉由重複同樣之動作,第1回收槽90A與第2回收槽90B係以液量低下作為觸發點,其任務係在回收目的地與磷酸水溶液補充來源之間交互地切換。 By repeating the same operation, the first recovery tank 90A and the second recovery tank 90B use a lower liquid amount as a trigger point, and the task is to alternately switch between the recovery destination and the phosphoric acid aqueous solution supplement source.
其次,參照圖11,控制裝置3係判定是否應開始朝作為回收目的地而被選擇之回收槽90A、90B補充新液(步驟S41)。具體而言,控制裝置3係判斷是否滿足應開始朝回收槽90A、90B補充新液的條件(補充開始條件)。補充開始條件亦可包含液量條件(回收液量條件)。液量條件之一具體例,係貯存在作為回收目的地而被選擇之回收槽90A、90B之回收液量增加而所對應之回收停止液量感測器76A、76B檢測到回收停止液量。此外,補充開始條件亦可包含處理數條件。處理數條件之一具體例,係在不將新液補充至回收槽90A、90B之狀態下而所被處理之基板W的片數達到至既定片數。進而,補充開始條件亦可包含有矽濃度條件。矽濃度條件之一具體例,係自供給槽31朝向磷酸噴嘴14所被供給之磷酸水溶液中之矽濃度達到至既定濃度。亦可為,當液量條件、處理數條件及矽濃度條件中之至少一者滿足時,控制裝置3係判斷為補充開始條件被滿足。 Next, referring to Fig. 11, the control device 3 determines whether or not the new liquid is to be replenished to the recovery tanks 90A and 90B selected as the collection destination (step S41). Specifically, the control device 3 determines whether or not the condition (supplement start condition) at which the new liquid should be replenished to the recovery tanks 90A and 90B is satisfied. The replenishment start condition may also include a liquid amount condition (recovery liquid amount condition). In one specific example of the liquid amount condition, the amount of the recovered liquid stored in the recovery tanks 90A and 90B selected as the recovery destination is increased, and the recovery stop liquid amount sensors 76A and 76B corresponding to the recovery stop liquid amount are detected. In addition, the supplemental start condition may also include a processing number condition. A specific example of the number of processing conditions is that the number of substrates W to be processed reaches a predetermined number of sheets without replenishing the new liquid to the recovery tanks 90A and 90B. Further, the supplemental start condition may also include a sputum concentration condition. In one specific example of the cerium concentration condition, the cerium concentration in the phosphoric acid aqueous solution supplied from the supply tank 31 toward the phosphoric acid nozzle 14 reaches a predetermined concentration. Alternatively, when at least one of the liquid amount condition, the treatment number condition, and the helium concentration condition is satisfied, the control device 3 determines that the supplementary start condition is satisfied.
當補充開始條件被滿足時(步驟S41:滿足),控制裝置3係停止回收動作(步驟S42)。即,控制裝置3係關閉與作為回收目的地而被選擇之回收槽90A、90B對應的回收閥72A、72B,並開啟排液閥82。 When the supplemental start condition is satisfied (step S41: satisfied), the control device 3 stops the recovery operation (step S42). In other words, the control device 3 closes the recovery valves 72A and 72B corresponding to the recovery tanks 90A and 90B selected as the recovery destination, and opens the liquid discharge valve 82.
進而,為了自新液補充系統50將新液補充至該回收目的地之回收槽90A、90B,控制裝置3係決定所補充之液量(步驟S43)。所補充之液體之總量係例如亦可為該回收目的地之回收槽90A、90B之回收停止液量感測器76A、76B所檢測之回收停止液量與目標液量感測器77A、77B所檢測之目標液量的差,此為已知之值。於因滿足處理數條件或矽濃度條件而補充開始條件被滿足時,有可能存在回收目的地之回收槽90A、90B內之液量為較回收停止液量多的情況。於如此之情況下,亦可為,控制裝置3係開啟所對應之排放閥47A、47B,針對回收槽90A、90B內之磷酸水溶液進行排液,直至該回收槽90A、90B內之液量成為回收停止液量為止。 Further, in order to replenish the new liquid to the recovery tanks 90A and 90B of the recovery destination from the fresh liquid replenishing system 50, the control device 3 determines the amount of liquid to be replenished (step S43). The total amount of the liquid to be replenished may be, for example, the amount of the recovery stop liquid detected by the recovery stop amount sensors 76A, 76B of the recovery tanks 90A, 90B of the recovery destination and the target liquid amount sensors 77A, 77B. The difference in the target liquid amount, which is a known value. When the replenishment start condition is satisfied because the processing number condition or the helium concentration condition is satisfied, there is a possibility that the liquid amount in the recovery tanks 90A and 90B at the recovery destination is larger than the recovery stop liquid amount. In such a case, the control device 3 may open the corresponding discharge valves 47A and 47B, and discharge the phosphoric acid aqueous solution in the recovery tanks 90A and 90B until the liquid amount in the recovery tanks 90A and 90B becomes The amount of stopped liquid is recovered.
控制裝置3係以如下方式決定補充液量,即混合作為回收目的地而被選擇之回收槽90A、90B內之磷酸水溶液、在新液調合槽51調合完畢之新液(基準矽濃度之未使用磷酸水溶液)、及磷酸原液,藉此基準矽濃度(調整目標值)之磷酸水溶液被貯存在該回收槽90A、90B內而至目標液量為止。新液補充量及磷酸原液補充量之合計為補充之總液量,如前述,該值為已知。此外,由於在回收槽90A、90B內之液量為在回收停止液量之狀態下進行補充,因此,在補充開始時之回收槽90A、90B內之磷酸水溶液液量亦為已知。因此,若得知在補充開始時之回收槽90A、90B內之磷酸水溶 液中之矽濃度,則控制裝置3係可據此決定新液補充量及磷酸原液補充量。換言之,可決定新液補充量與磷酸原液補充量之比。 The control device 3 determines the amount of replenishing liquid in which the phosphoric acid aqueous solution in the recovery tanks 90A and 90B selected as the recovery destination and the new liquid in the new liquid mixing tank 51 are mixed (the reference enthalpy concentration is not used). The phosphoric acid aqueous solution and the phosphoric acid stock solution are stored in the recovery tanks 90A and 90B to the target liquid amount by the reference cesium concentration (adjustment target value). The sum of the new liquid replenishing amount and the phosphoric acid stock replenishing amount is the total amount of the replenished liquid, which is known as described above. Further, since the amount of liquid in the recovery tanks 90A and 90B is replenished in a state where the amount of the stopped liquid is recovered, the amount of the phosphoric acid aqueous solution in the recovery tanks 90A and 90B at the start of the replenishment is also known. Therefore, if it is known that the phosphoric acid is dissolved in the recovery tanks 90A, 90B at the beginning of the replenishment The concentration of the ruthenium in the liquid, the control device 3 can determine the amount of the new liquid and the amount of the phosphate solution. In other words, the ratio of the amount of fresh liquid replenished to the amount of phosphate stock replenished can be determined.
被回收至回收槽90A、90B內而貯存之磷酸水溶液中之矽濃度係可基於配方或處理片數而加以預測。此係與第1實施形態相關而如同上述所說明之內容。與第1實施形態之情況相同地,矽濃度係可藉由運算而求出,亦可相對於基板W之種類、基板處理之條件、回收率、處理數等而使用對應有矽濃度值的表格來求出。此外,亦可相對於基板W之種類、基板處理之條件、回收率、處理數等而準備對應有新液補充量及磷酸原液補充量的表格。 The concentration of ruthenium in the aqueous phosphoric acid solution recovered in the recovery tanks 90A, 90B can be predicted based on the formulation or the number of sheets processed. This is related to the first embodiment and is as described above. As in the case of the first embodiment, the enthalpy concentration can be obtained by calculation, and a table corresponding to the enthalpy concentration value can be used with respect to the type of the substrate W, the conditions of the substrate processing, the recovery rate, the number of processes, and the like. To find out. Further, a table corresponding to the new liquid replenishing amount and the phosphoric acid stock replenishing amount may be prepared with respect to the type of the substrate W, the conditions of the substrate processing, the recovery rate, the number of processes, and the like.
如此,控制裝置3係決定新液補充量及磷酸原液補充量(步驟S43)。接著,控制裝置3係開啟與作為回收目的地而被選擇之回收槽90A、90B對應的補充閥53A、53B,驅動泵54,自新液調合槽51朝該回收槽90A、90B補充新液(步驟S44)。該補充量係利用積算流量計61測量。當積算流量計61之測量值達到至新液補充量時(步驟S45:YES),控制裝置3係停止泵54,並關閉補充閥53A、53B(步驟S46)。此外,控制裝置3係開啟與作為回收目的地而被選擇之回收槽90A、90B對應的磷酸原液補充閥60A、60B,經由磷酸原液配管55而朝該回收槽90A、90B補充磷酸原液(步驟S47)。該補充量係利用積算流量計62測量。當積算流量計62之測量值達到至磷酸原液補充量(步驟S48:YES),控制裝置3係關閉第1磷酸原液補充閥60A,使磷酸原液之補充停止(步驟S49)。 In this manner, the control device 3 determines the amount of new liquid replenishment and the amount of replenishment of the phosphoric acid solution (step S43). Next, the control device 3 opens the replenishing valves 53A and 53B corresponding to the recovery tanks 90A and 90B selected as the recovery destinations, drives the pump 54, and replenishes the new liquid from the new liquid mixing tank 51 toward the recovery tanks 90A and 90B ( Step S44). This replenishment amount is measured by the integrated flow meter 61. When the measured value of the integrated flow meter 61 reaches the new liquid replenishing amount (step S45: YES), the control device 3 stops the pump 54, and closes the replenishing valves 53A, 53B (step S46). In addition, the control device 3 opens the phosphate raw material replenishing valves 60A and 60B corresponding to the recovery tanks 90A and 90B selected as the recovery destinations, and supplies the phosphate raw liquid to the recovery tanks 90A and 90B via the phosphoric acid raw material piping 55 (step S47). ). This replenishment amount is measured using the integrated flow meter 62. When the measured value of the integrated flow meter 62 reaches the phosphoric acid stock replenishing amount (step S48: YES), the control device 3 closes the first phosphoric acid stock replenishing valve 60A to stop the replenishment of the phosphoric acid stock solution (step S49).
藉由重複如此之動作,於作為回收目的地而被選擇之回收槽90A、90B即並非朝供給槽31之磷酸水溶液補充來源的回收槽90A、90B中,可預先調合基準矽濃度之磷酸水溶液。由於回 收目的地與磷酸水溶液補充來源係如上述般交互地被切換,因此,藉由對於第1及第2回收槽90A、90B之新液補充而所進行之磷酸水溶液調合動作係交互地被執行。 By repeating such an operation, the recovery tanks 90A and 90B which are selected as the recovery destinations are not the recovery tanks 90A and 90B which are not supplied to the phosphoric acid aqueous solution of the supply tank 31, and the phosphoric acid aqueous solution having the reference enthalpy concentration can be previously adjusted. Thanks back Since the collection destination and the phosphoric acid aqueous solution supplement source are alternately switched as described above, the phosphoric acid aqueous solution blending operation by the new liquid replenishment of the first and second recovery tanks 90A and 90B is interactively performed.
如上述,在本實施形態中,用於貯存磷酸水溶液的槽係包含有:第1及第2回收槽90A、90B,該等係經由回收配管71而被導入有用於基板處理所被使用的磷酸水溶液;及供給槽31,其係經由補充配管100而被供給有貯存在該等之第1及第2回收槽90A、90B的磷酸水溶液。接著,貯存在供給槽31之磷酸水溶液係經由磷酸配管15而供給至磷酸噴嘴14。新液補充系統50係將未使用之磷酸水溶液(新液及磷酸原液)供給至回收槽90A、90B。 As described above, in the present embodiment, the tank for storing the phosphoric acid aqueous solution includes the first and second recovery tanks 90A and 90B, and the phosphoric acid used for the substrate treatment is introduced through the recovery pipe 71. The aqueous solution; and the supply tank 31 are supplied with the phosphoric acid aqueous solution stored in the first and second recovery tanks 90A and 90B via the supplementary piping 100. Next, the phosphoric acid aqueous solution stored in the supply tank 31 is supplied to the phosphoric acid nozzle 14 via the phosphate pipe 15. The new liquid replenishing system 50 supplies an unused aqueous phosphoric acid solution (new liquid and phosphoric acid stock solution) to the recovery tanks 90A and 90B.
磷酸水溶液中之矽濃度之調整係在回收槽90A、90B被進行,矽濃度調整完畢之磷酸水溶液係自回收槽90A、90B經由補充配管100而朝供給槽31輸送。因此,供給槽31內之磷酸水溶液中之矽濃度係不受液回收之影響而為穩定。藉此,可將更加穩定之矽濃度之磷酸水溶液自磷酸噴嘴14朝基板W進行供給。 The adjustment of the ruthenium concentration in the phosphoric acid aqueous solution is carried out in the recovery tanks 90A and 90B, and the phosphoric acid aqueous solution whose enthalpy concentration has been adjusted is transported from the recovery tanks 90A and 90B to the supply tank 31 via the supplementary piping 100. Therefore, the concentration of ruthenium in the aqueous phosphoric acid solution in the supply tank 31 is not affected by the liquid recovery and is stabilized. Thereby, a more stable aqueous solution of phosphoric acid having a stable concentration can be supplied from the phosphoric acid nozzle 14 to the substrate W.
此外,在本實施形態中,第1回收槽90A及第2回收槽90B之一者係被選擇作為朝供給槽31的磷酸水溶液補充來源,該等之另一者係被選擇作為使用完畢磷酸水溶液之回收目的地。藉此,可不停滯地將矽濃度調整完畢之磷酸水溶液供給至供給槽31,因此朝基板W之磷酸水溶液供給則不停滯。藉此,可提高基板處理之生產性。此外,在用於磷酸水溶液之回收的回收槽90A、90B中,將新液及磷酸原液供給至被回收之磷酸水溶液而進行矽濃度調整。因此,將磷酸水溶液供給至供給槽31的回收槽90A、90B內之磷酸水溶液中之矽濃度穩定,因此可穩定地保持供給槽31之磷 酸水溶液中之矽濃度。藉此,被使用在基板處理的磷酸水溶液中之矽濃度係更加穩定。 Further, in the present embodiment, one of the first recovery tank 90A and the second recovery tank 90B is selected as a supplemental source of the phosphoric acid aqueous solution to the supply tank 31, and the other one is selected as the used phosphoric acid aqueous solution. Recycling destination. Thereby, the phosphoric acid aqueous solution whose enthalpy concentration has been adjusted can be supplied to the supply tank 31 without stagnation, so that the supply of the phosphoric acid aqueous solution to the substrate W does not stagnate. Thereby, the productivity of the substrate processing can be improved. Further, in the recovery tanks 90A and 90B for recovering the phosphoric acid aqueous solution, the new liquid and the phosphoric acid raw liquid are supplied to the recovered phosphoric acid aqueous solution to adjust the enthalpy concentration. Therefore, the concentration of ruthenium in the aqueous phosphoric acid solution in the recovery tanks 90A and 90B supplied to the supply tank 31 is stabilized, so that the phosphorus in the supply tank 31 can be stably maintained. The concentration of ruthenium in an aqueous acid solution. Thereby, the concentration of ruthenium used in the aqueous solution of phosphoric acid treated in the substrate is more stable.
圖12是用於說明本發明之第3實施形態之基板處理裝置1之構成之示意圖。於圖2中,與圖7對應之部分係以相同參考符號表示。在該實施形態中,新液補充系統50係具備有第1新液調合槽51及第2新液調合槽111。對於第1新液調合槽51,經由第1磷酸原液閥56而自磷酸原液配管55被供給有磷酸原液,對於第2新液調合槽111,經由第2磷酸原液閥112而自第2磷酸原液配管113被供給有磷酸原液。此外,對於第1新液調合槽51,經由第1矽閥58而自矽濃縮液配管57被供給有矽濃縮液,對於第2新液調合槽111,經由第2矽閥114而自第2矽濃縮液配管115被供給有矽濃縮液。 FIG. 12 is a schematic view for explaining the configuration of the substrate processing apparatus 1 according to the third embodiment of the present invention. In FIG. 2, parts corresponding to those in FIG. 7 are denoted by the same reference symbols. In the embodiment, the new liquid replenishing system 50 includes the first fresh liquid mixing tank 51 and the second new liquid mixing tank 111. In the first fresh liquid mixing tank 51, a phosphate raw liquid is supplied from the phosphoric acid raw material piping 55 via the first phosphoric acid raw liquid valve 56, and the second fresh liquid mixing tank 111 is supplied from the second phosphoric acid raw liquid through the second phosphoric acid raw liquid valve 112. The piping 113 is supplied with a phosphate stock solution. In addition, the first fresh liquid mixing tank 51 is supplied with the hydrazine concentrate from the hydrazine concentrate pipe 57 via the first dam valve 58, and the second new liquid mixing tank 111 is passed through the second dam valve 114 from the second The hydrazine concentrate pipe 115 is supplied with a hydrazine concentrate.
第1新液調合槽51係經由第1新液補充來源選擇閥121而連接於新液補充配管52。第2新液調合槽111經由第2新液補充來源選擇閥122而連接於新液補充配管52。第2新液調合槽111、第2新液補充來源選擇閥122、泵54及新液補充閥53A、53B係構成第3磷酸水溶液供給手段。 The first fresh liquid mixing tank 51 is connected to the new liquid supply pipe 52 via the first fresh liquid supplement source selection valve 121. The second fresh liquid mixing tank 111 is connected to the new liquid supply pipe 52 via the second new liquid supply source selection valve 122. The second fresh liquid mixing tank 111, the second new liquid replenishing source selection valve 122, the pump 54, and the new liquid replenishing valves 53A and 53B constitute a third phosphoric acid aqueous solution supply means.
控制裝置3(參照圖8)係對上述之閥112、114、121、122進行開閉控制。 The control device 3 (see Fig. 8) controls the opening and closing of the above-described valves 112, 114, 121, and 122.
藉由如此之構成,可自第1新液調合槽51及/或第2新液調合槽111將添加有矽之未使用的磷酸水溶液供給至第1回收槽90A及第2回收槽90B。 According to this configuration, the unused phosphoric acid aqueous solution to which the ruthenium is added can be supplied to the first recovery tank 90A and the second recovery tank 90B from the first fresh liquid mixing tank 51 and/or the second new liquid mixing tank 111.
控制裝置3係例如在第1新液調合槽51內調合矽濃度(第1濃度之例)較基準矽濃度低之磷酸水溶液。此外,控制裝置 3係在第2新液調合槽111內調合基準矽濃度(第3濃度之例)之磷酸水溶液。 The control device 3 is, for example, a phosphoric acid aqueous solution having a lower radon concentration (in the case of the first concentration) than the reference rhodium concentration in the first fresh liquid mixing tank 51. In addition, the control device 3 is a phosphoric acid aqueous solution in which the reference cerium concentration (the third concentration is exemplified) is blended in the second fresh liquid mixing tank 111.
於啟動基板處理裝置1而開始使用時,第2新液補充來源選擇閥122被開啟,第1新液補充來源選擇閥121被關閉,自第2新液調合槽111對回收槽90A、90B之一者(例如第1回收槽90A)供給基準矽濃度之磷酸水溶液(新液)而進行貯存。接著,自第1回收槽90A對供給槽31供給該基準矽濃度之磷酸水溶液,而將該磷酸水溶液使用於基板處理。 When the substrate processing apparatus 1 is started to be used, the second new liquid replenishment source selection valve 122 is opened, and the first new liquid replenishment source selection valve 121 is closed, and the second new liquid mixing tank 111 is opposed to the recovery tanks 90A and 90B. One (for example, the first recovery tank 90A) is supplied with a phosphoric acid aqueous solution (new liquid) having a reference hydrazine concentration and stored. Next, the phosphoric acid aqueous solution having the reference enthalpy concentration is supplied from the first recovery tank 90A to the supply tank 31, and the phosphoric acid aqueous solution is used for substrate treatment.
另一方面,於回收槽90A、90B之另一者(例如第2回收槽90B),回收有使用完畢之磷酸水溶液。於將新液混合於該所被回收之磷酸水溶液而調整為基準矽濃度時,控制裝置3係開啟第1新液補充來源選擇閥121,關閉第2新液補充來源選擇閥122。藉此,控制裝置3係使矽濃度較基準矽濃度低之新液自第1新液調合槽51供給至第2回收槽90B。由於使用完畢之磷酸水溶液中之矽濃度係較基準矽濃度高,因此藉由混合矽濃度較低之磷酸水溶液,可容易地調整第2回收槽90B內之磷酸水溶液之矽濃度。 On the other hand, in the other of the recovery tanks 90A and 90B (for example, the second recovery tank 90B), the used phosphoric acid aqueous solution is recovered. When the new liquid is mixed with the recovered phosphoric acid aqueous solution and adjusted to the reference enthalpy concentration, the control device 3 turns on the first new liquid replenishment source selection valve 121, and closes the second new liquid replenishment source selection valve 122. Thereby, the control device 3 supplies the new liquid having a lower enthalpy concentration than the reference enthalpy concentration to the second recovery tank 90B from the first fresh liquid mixing tank 51. Since the concentration of ruthenium in the used phosphoric acid aqueous solution is higher than the reference ruthenium concentration, the ruthenium concentration of the phosphoric acid aqueous solution in the second recovery tank 90B can be easily adjusted by mixing the phosphoric acid aqueous solution having a low ruthenium concentration.
當然,在基板處理片數較少之階段,重複被使用之磷酸水溶液中之矽濃度並不是那麼地高。因此,例如亦可為,至既定之處理片數為止係自第2新液調合槽111補充基準矽濃度之新液,當超過既定處理片數時,則自第1新液調合槽51補充低矽濃度之新液。此外,亦可為,於補充新液之前,測量回收槽90A、90B內之磷酸水溶液之矽濃度,配合該測量結果,選擇第1新液調合槽51或第2新液調合槽111中之任一者作為新液補充來源。進而,亦可為,配合基板W之種類,選擇第1新液調合槽51或第2新液調合 槽111中之任一者作為新液補充來源。 Of course, in the stage where the number of substrates to be processed is small, the concentration of ruthenium in the aqueous phosphoric acid solution to be used repeatedly is not so high. Therefore, for example, it is also possible to add a new liquid having a reference enthalpy concentration from the second fresh liquid mixing tank 111 up to a predetermined number of processing sheets, and to add a low amount from the first new liquid mixing tank 51 when the number of predetermined processing sheets is exceeded. A new solution of bismuth concentration. Further, before the addition of the new liquid, the cerium concentration of the phosphoric acid aqueous solution in the recovery tanks 90A and 90B may be measured, and the first new liquid mixing tank 51 or the second new liquid mixing tank 111 may be selected in accordance with the measurement result. One is used as a supplement to the new fluid. Further, the first fresh liquid mixing tank 51 or the second new liquid may be blended in accordance with the type of the substrate W. Any of the slots 111 serves as a source of new fluid supplementation.
如此,在本實施形態中,在第1新液調合槽51調製矽濃度較零大而較基準矽濃度小之新液,在第2新液調合槽111調製基準矽濃度之新液。藉此,可使回收槽90A、90B內之磷酸水溶液之矽濃度調整幅度變大。 As described above, in the present embodiment, the first fresh liquid mixing tank 51 modulates a new liquid having a larger cerium concentration than that of the primary cerium concentration, and modulates the new liquid having the primary cerium concentration in the second fresh liquid mixing tank 111. Thereby, the enthalpy concentration adjustment range of the phosphoric acid aqueous solution in the recovery tanks 90A and 90B can be made large.
以上,已對於本發明之實施形態具體地進行說明,但本發明亦可進而以其他形態進行實施。例如,在上述實施形態中,例示有基準矽濃度之磷酸水溶液、零濃度之磷酸水溶液(磷酸原液)、及矽濃度較基準矽濃度低之磷酸水溶液,而作為對所被回收之使用完畢磷酸水溶液而進行混合之磷酸水溶液之例。然而,亦可使用該等以外之矽濃度之磷酸水溶液。 Although the embodiments of the present invention have been specifically described above, the present invention may be embodied in other forms. For example, in the above embodiment, a phosphoric acid aqueous solution having a reference ruthenium concentration, a zero-concentration phosphoric acid aqueous solution (phosphoric acid stock solution), and a phosphoric acid aqueous solution having a ruthenium concentration lower than the reference ruthenium concentration are exemplified as the used phosphoric acid aqueous solution to be recovered. An example of a mixed aqueous solution of phosphoric acid is used. However, it is also possible to use an aqueous solution of phosphoric acid having a concentration other than those of ruthenium.
此外,在第2及第3實施形態中,顯示具備有2個回收槽之構成。然而,可為具備有1個回收槽之構成,亦可為具備有3個以上之回收槽之構成。然而,藉由具備有複數個(2個以上)之回收槽,可區分為成為使用完畢磷酸水溶液之回收目的地的回收槽、及成為朝供給槽之補充來源的回收槽,因此可不停滯地對供給槽供給穩定之矽濃度之磷酸水溶液。 Further, in the second and third embodiments, the configuration in which two collection grooves are provided is shown. However, it may be configured to have one recovery tank, or may have a configuration in which three or more recovery tanks are provided. However, by providing a plurality of (two or more) recovery tanks, it is possible to distinguish between a recovery tank that is a destination for recovery of the used phosphoric acid aqueous solution and a recovery tank that serves as a supplemental source to the supply tank, so that it is possible to The supply tank supplies a stable aqueous solution of phosphoric acid at a helium concentration.
此外,具備有第1及第2新液調合槽之第3實施形態之構成亦可適用於圖2所示之第1實施形態。 Further, the configuration of the third embodiment including the first and second new liquid mixing tanks can be applied to the first embodiment shown in Fig. 2 .
已對於本發明之實施形態詳細地進行說明,但該等僅為用以明確說明本發明之技術內容之具體例,本發明不應被解釋為限定在該等之具體例,本發明之範圍僅由添附之申請專利範圍所限定。 The embodiments of the present invention have been described in detail, but these are only specific examples for illustrating the technical contents of the present invention, and the present invention should not be construed as limited to the specific examples. It is defined by the scope of the patent application.
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| CN111344839A (en) | 2020-06-26 |
| CN111344839B (en) | 2024-11-15 |
| TWI701086B (en) | 2020-08-11 |
| KR102483802B1 (en) | 2022-12-30 |
| JP2019091815A (en) | 2019-06-13 |
| JP6917868B2 (en) | 2021-08-11 |
| WO2019097901A1 (en) | 2019-05-23 |
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