TW201935727A - Polarizing film, manufacturing method thereof, and displaying device - Google Patents

Abstract

A polarizing film includes: an inorganic silicon nitride layer disposed on a substrate; an inorganic silicon oxide layer disposed on the inorganic silicon nitride layer; and a metal layer disposed on the inorganic silicon oxide layer, wherein the inorganic silicon oxide layer is rich Silicon-containing silicon oxide layer.

Description

Polarizing film, manufacturing method thereof, and display element

The present invention relates to a polarizing film, and in particular, to a polarizing film for an upper-emitting active organic light-emitting diode.

In the technical field of organic light emitting diodes, Active Matrix Organic Light-Emitting Diodes (AMOLEDs) are widely used in display devices. Among them, top-view active organic light-emitting diode (top-view OLED) structures are more common because of their higher aperture ratios and are not affected by the increase in the number of thin film transistors. However, because of its structure with a highly reflective metal layer, a circular polarizer must be attached to the package cover to reduce external light reflections to prevent affecting contrast.

However, circular polarizers are expensive, so the manufacturing cost of the display device is also increased, and the light transmittance of the existing circular polarizers is too low, which results in the problem of insufficient brightness of the light emitting diode.

In view of this, the present invention provides a polarizing film, which can replace the role of a substantial polarizer, and can easily achieve the effect of reducing the influence of external light reflection to reduce the manufacturing cost.

The polarizing film of the present invention is disposed on a substrate and includes an inorganic silicon nitride layer, an inorganic silicon oxide layer disposed on the inorganic silicon nitride layer, and a metal layer disposed on the inorganic silicon oxide layer. The inorganic silicon oxide layer is Silicon-rich silicon oxide layer.

In one embodiment of the present invention, the metal layer includes molybdenum.

In an embodiment of the present invention, the above-mentioned polarizing film further includes: a passivation layer disposed on the metal layer.

In one embodiment of the present invention, the passivation layer is an inorganic silicon oxide layer.

In an embodiment of the present invention, the above-mentioned polarizing film has a transmittance of more than 39% under a light source with a wavelength of 440 nm, and a transmittance of more than 44% with a light source with a wavelength of 550 nm. The transmittance under the light source is more than 44%.

In one embodiment of the present invention, the thickness of the metal layer is 50 to 105 Å.

In one embodiment of the present invention, the thickness of the metal layer is 50 to 100 Å.

In one embodiment of the present invention, the thickness of the inorganic silicon oxide layer is 25 to 50 Å.

In one embodiment of the present invention, the thickness of the passivation layer is 50 to 900 Å.

The invention also provides a method for manufacturing a polarizing film, comprising: a step of stacking an inorganic silicon nitride layer on a substrate; a step of stacking an inorganic silicon oxide layer on the inorganic silicon nitride layer; and a metal layer on the inorganic silicon oxide layer. Step, and the inorganic silicon oxide layer is a silicon-rich silicon nitride layer.

In one embodiment of the present invention, the step of laminating the inorganic silicon oxide layer is performed by a chemical vapor deposition method.

In an embodiment of the present invention, the above-mentioned method for manufacturing a polarizing film further includes: a step of laminating a passivation layer on the metal layer.

The present invention further provides a display element, including a thin-film transistor substrate, an organic electroluminescent layer provided on the thin-film transistor substrate, a substrate provided on the organic electroluminescent layer, and a polarizing film as described above provided on the substrate. And located between the substrate and the organic electroluminescent layer.

Based on the above, the polarizing film of the present invention can replace the role of a substantial polarizer, and can easily achieve the effect of reducing the influence of external light reflection, thereby reducing the manufacturing cost.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

The diagrams herein are only examples of parts of the invention. Therefore, the shape, number, and proportion of each element shown in the schematic diagram should not be used to limit the present invention. For example, the actual thickness and shape of each film layer in the schematic diagram is only used as an illustration, and does not mean that the actual thickness and shape of each film layer of the present invention must be shown in the figure.

FIG. 1 is a cross-sectional view of a polarizing film of the present invention. The polarizing film 20 of the present invention may be disposed on the substrate 1. The polarizing film 20 includes an inorganic silicon nitride layer 12, an inorganic silicon oxide layer 14 disposed on the inorganic silicon nitride layer 12, and an inorganic silicon oxide layer 14. The metal layer 16 and the inorganic silicon oxide layer 14 are silicon-rich silicon oxide layers.

The material of the substrate 1 may be glass, quartz, organic polymer, or other materials that can transmit light. In this embodiment, the substrate 1 is, for example, a package cover plate for packaging an organic light emitting diode.

A polarizing film 20 is disposed on one surface of the substrate 1. In this embodiment, the polarizing film 20 is disposed on the lower surface of the substrate 1 as an anti-reflection layer of a packaging cover of a light emitting diode.

Polarization film 20 has a transmittance of more than 39% under a light source with a wavelength of 440 nm, a transmittance of more than 44% with a light source with a wavelength of 550 nm, and a transmittance of more than 44% with a light source with a wavelength of 610 nm . By setting the transmittance of the polarizing film 20 to a specific light source within the above range, the overall transmittance of the polarizing film 20 to the internal emission light source T can be greatly improved, and the reflectance of the external incident light source hv can also be reduced.

The inorganic silicon nitride layer 12 is disposed on the substrate 1. For example, a method for setting the inorganic silicon nitride layer 12 is to deposit the inorganic silicon nitride layer 12 on the substrate 1 by using a chemical vapor deposition (CVD) method. By providing the inorganic silicon nitride layer 12, it can be used as a thin-film interference for the refraction / reflection of the external incident light source hv entering the anti-reflection layer.

The inorganic silicon oxide layer 14 is disposed on the inorganic silicon nitride layer 12. The method for setting the inorganic silicon oxide layer 14 is, for example, a chemical vapor deposition method to deposit the inorganic silicon oxide layer 12 on the inorganic silicon nitride layer 12 as an enrichment of the inorganic silicon oxide layer 14. A silicon oxide layer of silicon.

In one embodiment, the thickness of the inorganic silicon oxide layer 14 is 25 to 50 Å. By setting a silicon-rich silicon oxide layer as the inorganic silicon oxide layer 14, the transmittance of the light source in the blue light range can be improved, and the transmittance of the internal emission light source T at the full wavelength can be improved without the need to adjust the external Operating voltage.

The metal layer 16 is disposed on the inorganic silicon oxide layer 14. The metal used in the metal layer 16 is, for example, molybdenum (Mo). The method of setting the metal layer 16 is, for example, a sputtering deposition technique. In addition, for example, the sputtering process of the metal layer 16 is performed at a sputtering power of 0.215 to 0.744 W / cm ² . By providing the metal layer 16, it can be used as an anti-reflection layer of a polarizing film, and can block light reflection from an external incident light source hv. In an embodiment, the thickness of the metal layer 16 may be 50 to 105 Å. At this time, the transmittance of the internal light source T of the polarizing film 20 may be more than 50%. In another embodiment, the thickness of the metal layer 16 is 50 to 100 Å. At this time, the polarizing film 20 can have better yield performance in the manufacturing process at the same time.

In one embodiment, as shown in FIG. 2 of this case, the polarizing film 21 further includes a passivation layer 18 disposed on the metal layer 16. The passivation layer 18 is, for example, an inorganic silicon oxide layer. The method for setting the passivation layer 18 is, for example, depositing an inorganic silicon oxide layer as the passivation layer 18 on the metal layer 16 by a chemical vapor deposition method. By providing the passivation layer 18, the structure of the polarizing film 21 can be protected, and the polarizing layer 21 can be prevented from being damaged during the packaging of the light-emitting diode, thereby causing the function of the polarizing film 21 to be lost. In one embodiment, the thickness of the passivation layer 18 is 50 to 900 Å.

Hereinafter, the manufacturing method of the polarizing film of this invention is demonstrated. 3A to 3D are flowcharts of a method for manufacturing a polarizing film of the present application. It must be noted here that the description of the same technical content is omitted below. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

First, as shown in FIG. 3A, an inorganic silicon nitride layer 12 is deposited on the substrate 1 by a chemical vapor deposition method.

Next, as shown in FIG. 3B, a silicon-rich silicon oxide layer as an inorganic silicon oxide layer 14 is deposited on the inorganic silicon nitride layer 12 by a chemical vapor deposition method.

Finally, as shown in FIG. 3C, a metal layer 16 containing molybdenum is deposited on the inorganic silicon nitride layer 14 by a low-power sputtering deposition technique.

In addition, as shown in FIG. 3D, after the step of laminating the metal layer 16, an inorganic silicon oxide layer as the passivation layer 18 may be deposited on the metal layer 16 by a chemical vapor deposition method.

Compared with the packaging cover with circular polarizers currently used in mass production, the package cover with polarizing film prepared by the above method has a light transmittance increased from about 44% to 52%. The light emitting efficiency of the light emitting diode is greatly increased, and the reflectance can also maintain the same level as the existing products.

4 is a cross-sectional view of a display device according to an embodiment of the present invention. The display element 100 of the present invention includes a thin-film transistor substrate 30, an organic electroluminescent layer 40, a substrate 1, and a polarizing film 21.

The thin film transistor substrate 30 and the organic electroluminescent layer 40 can be provided according to requirements. The organic electroluminescent layer 40 is disposed on the thin-film transistor substrate 30.

The substrate 1 is used as a package cover of the display element 100. Therefore, referring to the foregoing description, glass, quartz, organic polymers, or other materials that can transmit light can be used.

The polarizing film 21 is disposed on the substrate 1 and is located between the substrate 1 and the organic electroluminescent layer 40. More specifically, the polarizing film 21 is provided on the lower surface of the substrate 1.

The polarizing film 21 is the polarizing film of the present invention. As described above, the polarizing film 21 includes an inorganic silicon nitride layer 12, an inorganic silicon oxide layer 14 provided on the inorganic silicon nitride layer 12, and an inorganic silicon oxide layer 14. The upper metal layer 16 and the passivation layer 18 disposed on the metal layer 16, and the inorganic silicon oxide layer 14 is a silicon-rich silicon oxide layer. In FIG. 4, the polarizing film 21 is taken as an example for description, but the present invention is not limited thereto. The polarizing film 21 can also use the polarizing film 20 without the passivation layer 18.

In addition, in order to avoid damage during the packaging process, in the display element 100 of the present invention, a support 50 may be provided on the organic electroluminescent layer 40 according to requirements, but the present invention is not limited thereto, and the display element 100 may not be provided. Support body 50.

In summary, the polarizing film of the present invention can replace the role of a substantial polarizer to reduce manufacturing costs. At the same time, the light transmittance of the polarizing film of the present invention is also better than that of the existing polarizers, and the effect of reducing the influence of external light reflection can be easily achieved.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

1‧‧‧ substrate

12‧‧‧ inorganic silicon nitride layer

14‧‧‧ inorganic silicon oxide layer

16‧‧‧ metal layer

18‧‧‧ passivation layer

20, 21‧‧‧ polarizing film

30‧‧‧ thin film transistor substrate

40‧‧‧Organic electroluminescent layer

50‧‧‧ support

100‧‧‧ display element

hv‧‧‧ external incident light source

T‧‧‧ Internal emitting light source

FIG. 1 is a cross-sectional view of a polarizing film according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of a polarizing film according to another embodiment of the present invention. 3A to 3D are flowcharts of a method for manufacturing a polarizing film of the present invention. 4 is a cross-sectional view of a display device according to an embodiment of the present invention.

Claims (19)

A polarizing film is disposed on a substrate. The polarizing film includes: an inorganic silicon nitride layer provided on the substrate; an inorganic silicon oxide layer provided on the inorganic silicon nitride layer; and a metal layer provided. On the inorganic silicon oxide layer, the inorganic silicon oxide layer is a silicon-rich silicon oxide layer. The polarizing film according to item 1 of the patent application scope, wherein the metal layer contains molybdenum. The polarizing film according to item 1 of the scope of patent application, further comprising: a passivation layer disposed on the metal layer. The polarizing film according to item 3 of the patent application scope, wherein the passivation layer is an inorganic silicon oxide layer. The polarizing film according to item 1 of the scope of patent application, wherein the polarizing film has a transmittance of more than 39% under a light source with a wavelength of 440 nm, and a transmittance of more than 44% under a light source with a wavelength of 550 nm. The transmittance of a light source with a wavelength of 610 nm is more than 44%. The polarizing film according to item 1 of the patent application scope, wherein the thickness of the metal layer is 50 to 105 Å. The polarizing film according to item 1 of the patent application range, wherein the thickness of the metal layer is 50 to 100 Å. The polarizing film according to item 1 of the patent application scope, wherein the thickness of the inorganic silicon oxide layer is 25 to 50 Å. The polarizing film according to item 3 of the patent application scope, wherein the thickness of the passivation layer is 50 to 900 Å. A method for manufacturing a polarizing film includes: a step of laminating an inorganic silicon nitride layer on a substrate; a step of laminating an inorganic silicon oxide layer on the inorganic silicon nitride layer; and laminating an inorganic silicon oxide layer on the inorganic silicon oxide layer. A metal layer step, and the inorganic silicon oxide layer is a silicon-rich silicon nitride layer. The method for manufacturing a polarizing film according to item 10 of the scope of application, wherein the step of laminating the inorganic silicon oxide layer is performed by a chemical vapor deposition method. The method for manufacturing a polarizing film according to item 10 of the application, wherein the metal layer contains molybdenum. The method for manufacturing a polarizing film according to item 10 of the patent application scope, further comprising: a step of laminating a passivation layer on the metal layer. The method for manufacturing a polarizing film according to item 13 of the application, wherein the passivation layer is an inorganic silicon oxide layer. The method for manufacturing a polarizing film according to item 10 of the application, wherein the thickness of the metal layer is 50 to 105 Å. The method for manufacturing a polarizing film according to item 10 of the application, wherein the thickness of the metal layer is 50 to 100 Å. The method for manufacturing a polarizing film according to item 10 of the application, wherein the thickness of the inorganic silicon oxide layer is 25 to 50 Å. The method for manufacturing a polarizing film according to item 13 of the application, wherein the thickness of the passivation layer is 50 to 900 Å. A display element includes: a thin-film transistor substrate; an organic electroluminescent layer provided on the thin-film transistor substrate; a substrate provided on the organic electroluminescent layer; The polarizing film according to any one of item 9, is disposed on the substrate, and the polarizing film is located between the substrate and the organic electroluminescent layer.