TW201934697A - Electromagnetic wave shielding film capable of easily peeling off a transfer film without damaging the insulating protective layer - Google Patents
Electromagnetic wave shielding film capable of easily peeling off a transfer film without damaging the insulating protective layer Download PDFInfo
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- TW201934697A TW201934697A TW107132263A TW107132263A TW201934697A TW 201934697 A TW201934697 A TW 201934697A TW 107132263 A TW107132263 A TW 107132263A TW 107132263 A TW107132263 A TW 107132263A TW 201934697 A TW201934697 A TW 201934697A
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- protective layer
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- transfer film
- electromagnetic wave
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Laminated Bodies (AREA)
Abstract
Description
本發明係關於電磁波屏蔽膜。The present invention relates to an electromagnetic wave shielding film.
背景技術
為了保護電子電路免受電磁波的影響,使用電磁波屏蔽膜。電磁波屏蔽膜具有導電性接著劑層與絕緣保護層。通常電磁波屏蔽膜係於基材膜表面依序形成絕緣保護層及導電性接著劑層來製造。基材膜係於將電磁波屏蔽膜接著於印刷配線基板後並於回焊步驟前被去除。此時,基材膜係作為其表面狀態可轉印至絕緣保護層的轉印膜而發揮作用。又,基材膜亦作為保護膜而發揮作用,以保護絕緣保護層直到要將電磁波屏蔽膜接著於印刷配線基板為止。BACKGROUND In order to protect electronic circuits from electromagnetic waves, an electromagnetic wave shielding film is used. The electromagnetic wave shielding film has a conductive adhesive layer and an insulating protective layer. Generally, an electromagnetic wave shielding film is manufactured by sequentially forming an insulating protection layer and a conductive adhesive layer on the surface of a substrate film. The base film is formed by bonding the electromagnetic wave shielding film to the printed wiring board and removing it before the reflow step. At this time, the base film functions as a transfer film whose surface state can be transferred to the insulating protective layer. The base film also functions as a protective film to protect the insulating protective layer until the electromagnetic wave shielding film is adhered to the printed wiring board.
為了使絕緣保護層表面成為消光面,通常會於轉印膜表面設置凹凸。藉由設置凹凸,轉印膜與絕緣保護層的密著性會變高,而剝離轉印膜時所需要的力量會變大。又,要將電磁波屏蔽膜接著於印刷配線基板時,通常會於150℃~200℃左右的溫度下施加數MPa的壓力。當暴露於如此的溫度與壓力時,轉印膜的剝離會變得更加困難,還會有轉印膜破裂之情形。In order to make the surface of the insulating protective layer a matte surface, unevenness is usually provided on the surface of the transfer film. By providing unevenness, the adhesion between the transfer film and the insulating protective layer becomes high, and the force required to peel the transfer film becomes large. In addition, when an electromagnetic wave shielding film is bonded to a printed wiring board, a pressure of several MPa is usually applied at a temperature of about 150 ° C to 200 ° C. When exposed to such temperatures and pressures, peeling of the transfer film becomes more difficult, and the transfer film may break.
為了防止剝離時的破裂,有人研究使轉印膜本身不易破裂的方法(例如參照專利文獻1及2)。In order to prevent cracking at the time of peeling, a method for making the transfer film itself difficult to crack has been studied (for example, refer to Patent Documents 1 and 2).
先行技術文獻
專利文獻
專利文獻1:日本特開2015-185659號公報
專利文獻2:日本特開2016-97522號公報Prior art documents Patent documents Patent document 1: Japanese Patent Application Laid-Open No. 2015-185659 Patent document 2: Japanese Patent Application Laid-Open No. 2016-97522
發明概要
發明欲解決之課題
然而,縱使轉印膜本身變得難以破裂,若剝離時需要較大的力量,會導致生產性降低。又,恐怕還會導致絕緣保護層側損傷。為了要使轉印膜可容易剝離,希望去控制轉印膜與絕緣保護層之相互作用。SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, even if the transfer film itself is difficult to crack, if a large force is required for peeling, the productivity will be lowered. In addition, it may cause damage to the insulating protective layer side. In order to make the transfer film easily peelable, it is desirable to control the interaction between the transfer film and the insulating protective layer.
本發明之課題在於可實現一種轉印膜容易剝離的電磁波屏蔽膜。An object of the present invention is to realize an electromagnetic wave shielding film in which a transfer film is easily peeled.
用以解決課題之手段
本發明之電磁波屏蔽膜之一態樣具備:絕緣保護層;轉印膜,係設置於絕緣保護層表面;及導電性接著劑層,係設置於絕緣保護層之位在與轉印膜相反之一側;轉印膜之絕緣保護層側的面的最大谷深(Sv)為1μm以上且6μm以下、最大高度(Sz)為2μm以上且10μm以下。Means for Solving the Problems One aspect of the electromagnetic wave shielding film of the present invention includes: an insulating protective layer; a transfer film provided on the surface of the insulating protective layer; and a conductive adhesive layer provided on the insulating protective layer. The side opposite to the transfer film; the maximum valley depth (Sv) of the surface on the insulating protective layer side of the transfer film is 1 μm or more and 6 μm or less, and the maximum height (Sz) is 2 μm or more and 10 μm or less.
於電磁波屏蔽膜之一態樣中,轉印膜之絕緣保護層側的面上,最大谷深(Sv)之變動係數及最大高度(Sz)之變動係數可設為0.2以下。In one aspect of the electromagnetic wave shielding film, the variation coefficient of the maximum valley depth (Sv) and the variation coefficient of the maximum height (Sz) on the surface of the insulating protective layer side of the transfer film can be set to 0.2 or less.
發明效果
根據本發明之電磁波屏蔽膜,可使轉印膜變得容易剝離而提高生產性。Advantageous Effects of Invention According to the electromagnetic wave shielding film of the present invention, the transfer film can be easily peeled and productivity can be improved.
用以實施發明之形態
如圖1所示,本實施形態之電磁波屏蔽膜具備:絕緣保護層112;設置於絕緣保護層112表面的轉印膜115;及設置於絕緣保護層112之位在與轉印膜115相反之一側的導電性接著劑層111。再者,如圖2所示,亦可於絕緣保護層112與導電性接著劑層111之間設置屏蔽層113。The form for implementing the invention is shown in FIG. 1. The electromagnetic wave shielding film of this embodiment includes: an insulating protective layer 112; a transfer film 115 provided on the surface of the insulating protective layer 112; The conductive adhesive layer 111 on the opposite side of the transfer film 115. Furthermore, as shown in FIG. 2, a shielding layer 113 may be provided between the insulating protective layer 112 and the conductive adhesive layer 111.
本案發明人等發現:藉由將轉印膜115之絕緣保護層112側的面上的最大谷深(Sv)設為6μm以下、較佳為5μm以下,並將最大高度(Sz)設為10μm以下、較佳為9μm以下,即可形成可容易剝離的轉印膜115。The present inventors have found that by setting the maximum valley depth (Sv) on the surface of the insulating protective layer 112 side of the transfer film 115 to be 6 μm or less, preferably 5 μm or less, and setting the maximum height (Sz) to 10 μm Below, preferably 9 μm or less, a transfer film 115 that can be easily peeled off can be formed.
另一方面,發現存在有即使算術平均高度(Sa)較小仍難以剝離的膜。思量其原因,也許是因為就算以平均值來看是同等程度的凹凸,只要有極小(pinpoint)的深谷或高山,則於該部分的密著性就會變高,而剝離會變得困難。因此,控制轉印膜115的Sv及Sz就變得重要。再者,轉印膜115的Sa、Sv及Sz可藉由實施例中說明的方法進行測定。On the other hand, it was found that there is a film that is difficult to peel even if the arithmetic mean height (Sa) is small. The reason for this may be that even if the average level of unevenness is the same, as long as there are extremely small pinpoints of deep valleys or high mountains, the adhesion to the part will increase, and peeling will become difficult. Therefore, it is important to control Sv and Sz of the transfer film 115. The Sa, Sv, and Sz of the transfer film 115 can be measured by the methods described in the examples.
由使剝離變得容易之觀點來看,轉印膜115之絕緣保護層112側的面上的最大谷深雖是越小越好,但是,由要將絕緣保護層112表面作成消光面之觀點、及由要使轉印膜115在固定於印刷配線基板之前不會剝離之觀點來看,Sv為1μm以上、較佳為2μm以上,Sz為2μm以上、較佳為3μm以上。From the viewpoint of facilitating peeling, the smaller the maximum valley depth on the surface of the insulating protective layer 112 side of the transfer film 115 is, the better, but from the viewpoint of making the surface of the insulating protective layer 112 a matte surface. From the viewpoint of preventing the transfer film 115 from peeling off before it is fixed to the printed wiring board, Sv is 1 μm or more, preferably 2 μm or more, and Sz is 2 μm or more, preferably 3 μm or more.
由易於剝離之觀點來看,轉印膜115的剝離強度宜為5.0N/50mm以下、較佳為1.5N/50mm以下,由要使轉印膜115在使用前不致剝離之觀點來看,剝離強度宜為0.2N/50mm以上、較佳為0.5N/50mm以上。再者,轉印膜115的剝離強度可藉由實施例所示之方法進行測定。From the viewpoint of easy peeling, the peeling strength of the transfer film 115 is preferably 5.0 N / 50 mm or less, and preferably 1.5 N / 50 mm or less. From the viewpoint of preventing the transfer film 115 from peeling before use, peeling The strength is preferably 0.2N / 50mm or more, and more preferably 0.5N / 50mm or more. In addition, the peeling strength of the transfer film 115 can be measured by the method shown in an Example.
由使剝離變得更容易之觀點來看,轉印膜115之絕緣保護層112側的面上的Sv之變動係數及Sz之變動係數(CV)宜為0.2以下、較佳為0.15以下。此處所謂的變動係數,是如實施例所示由10點的算術平均及標準偏差所求得的值。From the viewpoint of making peeling easier, the coefficient of variation of Sv and the coefficient of variation (CV) of Sz on the surface of the insulating protective layer 112 side of the transfer film 115 are preferably 0.2 or less, and more preferably 0.15 or less. The coefficient of variation referred to here is a value obtained from the arithmetic mean and standard deviation of 10 points as shown in the examples.
又,由使剝離變得更加容易之觀點來看,宜就Sv及Sz以外的表示表面性狀的參數也加以控制。例如峰度(Sku)宜為2.0以上、較佳為3.0以上,且宜為8.5以下、較佳為7.5以下。最小自相關長度(Sal)宜為7.5μm以上、較佳為8.5μm以上,且宜為20.0μm以下、較佳為15.0以下。表面性狀的縱橫比(Str)宜為0.55以上、較佳為0.60以上,且宜為0.75以下。突出谷部高度(Svk)宜為0.20以上、較佳為0.25以上,且宜為0.75以下、較佳為0.70以下。將突出谷部與核心部分離的負荷面積率(Smr2)宜為90.0%以上、較佳為94.0%以上。此等表示表面性狀的參數亦可藉由實施例中所示的方法進行測定。From the viewpoint of making peeling easier, it is desirable to control parameters other than Sv and Sz that represent surface properties. For example, the kurtosis (Sku) is preferably 2.0 or more, preferably 3.0 or more, and preferably 8.5 or less, and more preferably 7.5 or less. The minimum autocorrelation length (Sal) is preferably 7.5 μm or more, preferably 8.5 μm or more, and preferably 20.0 μm or less, and preferably 15.0 or less. The aspect ratio (Str) of the surface texture is preferably 0.55 or more, more preferably 0.60 or more, and more preferably 0.75 or less. The protruding valley height (Svk) is preferably 0.20 or more, preferably 0.25 or more, and preferably 0.75 or less, and more preferably 0.70 or less. The load area ratio (Smr2) separating the protruding valley portion from the core portion is preferably 90.0% or more, and more preferably 94.0% or more. These parameters showing surface properties can also be measured by the methods shown in the examples.
轉印膜115的材質並無特別限定,可使用聚酯、聚烯烴、聚醯亞胺、聚萘二甲酸乙二酯或聚苯硫醚等。轉印膜115的厚度並無特別限定,由使剝離變得容易之觀點來看,宜為25μm以上且宜為100μm以下。The material of the transfer film 115 is not particularly limited, and polyester, polyolefin, polyimide, polyethylene naphthalate, or polyphenylene sulfide can be used. The thickness of the transfer film 115 is not particularly limited, but from the viewpoint of facilitating peeling, it is preferably 25 μm or more and 100 μm or less.
為了使Sv及Sz為預定值,轉印膜115的至少一面亦可進行噴砂處理等。又,藉由含有微粒子,也能使Sv及Sz為預定值。添加於轉印膜115的微粒子並無特別限定,例如可使用:無定形二氧化矽(膠體二氧化矽)、二氧化矽、滑石、碳酸鈣、碳酸鎂、碳酸鋇、硫酸鈣、硫酸鋇、磷酸鋰、磷酸鈣、磷酸鎂、氧化鋁、碳黑、二氧化鈦、高嶺土及合成沸石等無機粒子;以及交聯聚苯乙烯粒子及交聯丙烯酸粒子等有機粒子。In order to make Sv and Sz predetermined values, at least one surface of the transfer film 115 may be sandblasted or the like. In addition, by including fine particles, Sv and Sz can be set to predetermined values. The microparticles added to the transfer film 115 are not particularly limited, and examples thereof include amorphous silicon dioxide (colloidal silicon dioxide), silicon dioxide, talc, calcium carbonate, magnesium carbonate, barium carbonate, calcium sulfate, barium sulfate, Inorganic particles such as lithium phosphate, calcium phosphate, magnesium phosphate, alumina, carbon black, titanium dioxide, kaolin and synthetic zeolites; and organic particles such as cross-linked polystyrene particles and cross-linked acrylic particles.
於轉印膜115與絕緣保護層112之間,可設置離型劑層(未圖示)。離型劑層可藉由將矽系或非矽系離型劑塗佈於轉印膜115的絕緣保護層112側的面來形成。形成離型劑層時,其厚度可為數μm~十幾μm左右。A release agent layer (not shown) may be provided between the transfer film 115 and the insulating protection layer 112. The release agent layer can be formed by applying a silicon-based or non-silicon-based release agent to a surface on the insulating protective layer 112 side of the transfer film 115. When the release agent layer is formed, its thickness may be about several μm to about ten μm.
於本實施形態中,絕緣保護層112只要具有充分的絕緣性、可保護導電性接著劑層111及必要時保護屏蔽層113,則並無特別限定,例如可使用熱塑性樹脂、熱硬化性樹脂或活性能量線硬化性樹脂等來形成。In this embodiment, the insulating protective layer 112 is not particularly limited as long as it has sufficient insulation, can protect the conductive adhesive layer 111, and if necessary, the shielding layer 113. For example, a thermoplastic resin, a thermosetting resin, or It is made of an active energy ray-curable resin or the like.
熱塑性樹脂並無特別限定,可使用:苯乙烯系樹脂、乙酸乙烯酯系樹脂、聚酯系樹脂、聚乙烯系樹脂、聚丙烯系樹脂、醯亞胺系樹脂或丙烯酸系樹脂等。關於熱硬化性樹脂並無特別限定,可使用:酚系樹脂、環氧系樹脂、胺基甲酸酯系樹脂、三聚氰胺系樹脂、聚醯胺系樹脂或醇酸系樹脂等。關於活性能量線硬化性樹脂並無特別限定,例如可使用分子中具有至少2個(甲基)丙烯醯氧基的聚合性化合物等。保護層可由單一材料來形成,亦可由2種以上材料來形成。The thermoplastic resin is not particularly limited, and a styrene resin, a vinyl acetate resin, a polyester resin, a polyethylene resin, a polypropylene resin, a diimide resin, or an acrylic resin can be used. The thermosetting resin is not particularly limited, and a phenol-based resin, an epoxy-based resin, a urethane-based resin, a melamine-based resin, a polyamide-based resin, or an alkyd-based resin can be used. The active energy ray-curable resin is not particularly limited, and for example, a polymerizable compound having at least two (meth) acrylic fluorenyloxy groups in a molecule can be used. The protective layer may be formed of a single material, or may be formed of two or more materials.
絕緣保護層112中不限於著色劑,亦可視需要而含有:硬化促進劑、賦黏劑、抗氧化劑、塑化劑、紫外線吸收劑、消泡劑、調平劑、填充劑、阻燃劑、黏度調節劑及抗結塊劑等中之一種以上。The insulating protective layer 112 is not limited to a coloring agent, and may include a hardening accelerator, a tackifier, an antioxidant, a plasticizer, an ultraviolet absorber, an antifoaming agent, a leveling agent, a filler, a flame retardant, One or more of a viscosity modifier and an anti-caking agent.
絕緣保護層112亦可為材質或硬度、或者彈性模數等物性不同的2層以上積層體。例如若作成硬度較低的外層與硬度較高的內層的積層體,由於外層具有緩衝效果,故在將電磁波屏蔽膜101加熱加壓於印刷配線基板102之步驟中,可緩和施加於屏蔽層113的壓力。因此,可抑制屏蔽層113因設置於印刷配線基板102的高低差而遭到破壞之情形。The insulating protective layer 112 may be a laminate of two or more layers having different physical properties such as material, hardness, or elastic modulus. For example, if a laminated body with an outer layer having a lower hardness and an inner layer having a higher hardness is formed, since the outer layer has a buffering effect, the step of heating and pressing the electromagnetic wave shielding film 101 on the printed wiring board 102 can be relaxed to the shielding layer 113 pressure. Therefore, it is possible to prevent the shield layer 113 from being damaged due to the height difference provided on the printed wiring board 102.
絕緣保護層112可藉由於轉印膜115表面塗佈絕緣保護層用組成物來形成。絕緣保護層用組成物例如可於絕緣保護層用樹脂中添加適量溶劑來調製。The insulating protective layer 112 can be formed by coating the surface of the transfer film 115 with a composition for an insulating protective layer. The composition for an insulating protective layer can be prepared by adding an appropriate amount of a solvent to the resin for an insulating protective layer, for example.
絕緣保護層112的厚度並無特別限定,可視需要適當設定,但宜設為1μm以上、較佳為4μm以上,且宜設為20μm以下、較佳為10μm以下、更佳為5μm以下。藉由將絕緣保護層112的厚度設為1μm以上,可充分保護導電性接著劑層111及屏蔽層113。藉由將絕緣保護層112的厚度設為20μm以下,可容易使電磁波屏蔽膜101的彈性模數及斷裂伸度成為預定值。The thickness of the insulating protective layer 112 is not particularly limited, and may be appropriately set as necessary, but it is preferably set to 1 μm or more, preferably 4 μm or more, and preferably 20 μm or less, preferably 10 μm or less, and more preferably 5 μm or less. By setting the thickness of the insulating protective layer 112 to 1 μm or more, the conductive adhesive layer 111 and the shielding layer 113 can be sufficiently protected. By setting the thickness of the insulating protective layer 112 to 20 μm or less, the elastic modulus and the elongation at break of the electromagnetic wave shielding film 101 can be easily set to predetermined values.
設置屏蔽層113時,屏蔽層113可藉由金屬箔、蒸鍍膜及導電性填料等來形成。When the shielding layer 113 is provided, the shielding layer 113 can be formed by a metal foil, a vapor-deposited film, a conductive filler, or the like.
金屬箔並無特別限定,可作成由鎳、銅、銀、錫、金、鈀、鋁、鉻、鈦及鋅等任一種、或包含2種以上之合金所構成的箔。The metal foil is not particularly limited, and it can be made of any one of nickel, copper, silver, tin, gold, palladium, aluminum, chromium, titanium, and zinc, or an alloy containing two or more types.
金屬箔的厚度並無特別限定,宜為0.5μm以上、較佳為1.0μm以上。若金屬箔的厚度為0.5μm以上,則對屏蔽印刷配線基板傳送10MHz~100GHz高頻信號時,便可抑制高頻信號的衰減量。又,金屬箔的厚度宜為12μm以下、較佳為10μm以下、更佳為7μm以下。若金屬層厚度為12μm以下,則可抑制原材料成本同時屏蔽膜之判斷伸度會變得良好。The thickness of the metal foil is not particularly limited, but is preferably 0.5 μm or more, and more preferably 1.0 μm or more. If the thickness of the metal foil is 0.5 μm or more, when a high-frequency signal of 10 MHz to 100 GHz is transmitted to the shielded printed wiring board, the amount of attenuation of the high-frequency signal can be suppressed. The thickness of the metal foil is preferably 12 μm or less, preferably 10 μm or less, and more preferably 7 μm or less. When the thickness of the metal layer is 12 μm or less, the judgment elongation of the shielding film can be improved while reducing the cost of raw materials.
蒸鍍膜並無特別限定,可蒸鍍鎳、銅、銀、錫、金、鈀、鋁、鉻、鈦及鋅等而形成。蒸鍍上可使用電解鍍覆法、無電鍍覆法、濺鍍法、電子束蒸鍍法、真空蒸鍍法、化學氣相沉積(CVD)法或金屬有機化學氣相沉積(MOCVD)法等。The vapor-deposited film is not particularly limited, and can be formed by vapor-depositing nickel, copper, silver, tin, gold, palladium, aluminum, chromium, titanium, zinc, and the like. For the evaporation, an electrolytic plating method, an electroless plating method, a sputtering method, an electron beam evaporation method, a vacuum evaporation method, a chemical vapor deposition (CVD) method, or a metal organic chemical vapor deposition (MOCVD) method can be used. .
蒸鍍膜的厚度並無特別限定,宜為0.05μm以上、較佳為0.1μm以上。若金屬蒸鍍膜的厚度為0.05μm以上,則於屏蔽印刷配線基板中電磁波屏蔽膜屏蔽電磁波的特性會很優異。又,金屬蒸鍍膜的厚度宜小於0.5μm、較佳為小於0.3μm。若金屬蒸鍍膜的厚度小於0.5μm,則電磁波屏蔽膜的耐彎曲性會很優異,且可抑制屏蔽層因設置於印刷配線基板的高低差而遭到破壞之情形。The thickness of the vapor-deposited film is not particularly limited, but is preferably 0.05 μm or more, and more preferably 0.1 μm or more. When the thickness of the metal vapor-deposited film is 0.05 μm or more, the shielding property of the electromagnetic wave shielding film in the shielded printed wiring board is excellent. The thickness of the metal deposited film is preferably less than 0.5 μm, and more preferably less than 0.3 μm. When the thickness of the metal vapor-deposited film is less than 0.5 μm, the electromagnetic wave shielding film is excellent in bending resistance, and the shielding layer can be prevented from being damaged due to the height difference provided on the printed wiring board.
若是導電性填料,則可將調配有導電性填料的溶劑塗佈於絕緣保護層112表面後使之乾燥,藉此來形成屏蔽層113。導電性填料可使用金屬填料、金屬被覆樹脂填料、碳填料及其等之混合物。關於金屬填料,可使用:銅粉、銀粉、鎳粉、銀包銅粉、金包銅粉、銀包鎳粉及金包鎳粉等。此等金屬粉可藉由電解法、霧化法、還原法製作。金屬粉的形狀可列舉球狀、小片狀、纖維狀、樹枝狀等。In the case of a conductive filler, the shielding layer 113 can be formed by applying a solvent prepared with a conductive filler on the surface of the insulating protective layer 112 and drying it. As the conductive filler, a metal filler, a metal-coated resin filler, a carbon filler, and a mixture thereof can be used. As for the metal filler, copper powder, silver powder, nickel powder, silver-coated copper powder, gold-coated copper powder, silver-coated nickel powder, and gold-coated nickel powder can be used. These metal powders can be produced by electrolytic method, atomization method, and reduction method. Examples of the shape of the metal powder include a spherical shape, a small plate shape, a fibrous shape, and a dendritic shape.
於本實施形態中,屏蔽層113的厚度按照所要求的電磁屏蔽效果及反覆彎曲、滑動耐受性進行適當選擇即可,在屏蔽層113為金屬箔時,由確保斷裂伸度之觀點來看,屏蔽層113厚度宜設為12μm以下。In this embodiment, the thickness of the shielding layer 113 may be appropriately selected according to the required electromagnetic shielding effect and repeated bending and sliding resistance. When the shielding layer 113 is a metal foil, it is considered from the viewpoint of ensuring the elongation at break. The thickness of the shielding layer 113 should be set to 12 μm or less.
於本實施形態中,導電性接著劑層111包含熱塑性樹脂及熱硬化性樹脂等樹脂成分、與導電性填料。In this embodiment, the conductive adhesive layer 111 includes a resin component such as a thermoplastic resin and a thermosetting resin, and a conductive filler.
導電性接著劑層111包含熱塑性樹脂時,關於熱塑性樹脂例如可使用:苯乙烯系樹脂、乙酸乙烯酯系樹脂、聚酯系樹脂、聚乙烯系樹脂、聚丙烯系樹脂、醯亞胺系樹脂及丙烯酸系樹脂等。此等樹脂可單獨使用一種,亦可併用二種以上。When the conductive adhesive layer 111 contains a thermoplastic resin, the thermoplastic resin may be, for example, a styrene resin, a vinyl acetate resin, a polyester resin, a polyethylene resin, a polypropylene resin, a fluorene resin, or Acrylic resin, etc. These resins may be used singly or in combination of two or more kinds.
導電性接著劑層111包含熱硬化性樹脂時,關於熱硬化性樹脂例如可使用:酚系樹脂、環氧系樹脂、胺基甲酸酯系樹脂、三聚氰胺系樹脂、聚醯胺系樹脂及醇酸系樹脂等。關於活性能量線硬化性組成物並無特別限定,例如可使用分子中具有至少2個(甲基)丙烯醯氧基的聚合性化合物等。此等組成物可單獨使用一種,亦可併用二種以上。When the conductive adhesive layer 111 contains a thermosetting resin, the thermosetting resin can be, for example, a phenol-based resin, an epoxy-based resin, a urethane-based resin, a melamine-based resin, a polyamide-based resin, and an alcohol. Acid-based resins, etc. The active energy ray-curable composition is not particularly limited, and for example, a polymerizable compound having at least two (meth) acryloxy groups in a molecule can be used. These compositions may be used singly or in combination of two or more kinds.
熱硬化性樹脂例如包含:具有反應性第1官能基的第1樹脂成分、及會與第1官能基進行反應的第2樹脂成分。第1官能基,例如可設為環氧基、醯胺基或羥基等。第2官能基則因應第1官能基來選擇即可,例如第1官能基為環氧基時,第2官能基可設為羥基、羧基、環氧基及胺基等。具體而言,例如將第1樹脂成分設為環氧樹脂時,作為第2樹脂成分可使用:環氧基改質聚酯樹脂、環氧基改質聚醯胺樹脂、環氧基改質丙烯酸樹脂、環氧基改質聚胺基甲酸酯聚脲樹脂、羧基改質聚酯樹脂、羧基改質聚醯胺樹脂、羧基改質丙烯酸樹脂、羧基改質聚胺基甲酸酯聚脲樹脂及胺基甲酸酯改質聚酯樹脂等。此等之中,較佳為羧基改質聚酯樹脂、羧基改質聚醯胺樹脂、羧基改質聚胺基甲酸酯聚脲樹脂及胺基甲酸酯改質聚酯樹脂。又,第1樹脂成分為羥基時,作為第2樹脂成分可使用:環氧基改質聚酯樹脂、環氧基改質聚醯胺樹脂、環氧基改質丙烯酸樹脂、環氧基改質聚胺基甲酸酯聚脲樹脂、羧基改質聚酯樹脂、羧基改質聚醯胺樹脂、羧基改質丙烯酸樹脂、羧基改質聚胺基甲酸酯聚脲樹脂及胺基甲酸酯改質聚酯樹脂等。此等之中,較佳為羧基改質聚酯樹脂、羧基改質聚醯胺樹脂、羧基改質聚胺基甲酸酯聚脲樹脂及胺基甲酸酯改質聚酯樹脂。The thermosetting resin includes, for example, a first resin component having a reactive first functional group and a second resin component that reacts with the first functional group. The first functional group can be, for example, an epoxy group, amidino group, or a hydroxyl group. The second functional group may be selected according to the first functional group. For example, when the first functional group is an epoxy group, the second functional group may be a hydroxyl group, a carboxyl group, an epoxy group, an amine group, or the like. Specifically, for example, when the first resin component is an epoxy resin, as the second resin component, epoxy-modified polyester resin, epoxy-modified polyamine resin, and epoxy-modified acrylic can be used. Resin, epoxy-modified polyurethane polyurea resin, carboxy-modified polyester resin, carboxy-modified polyamine resin, carboxy-modified acrylic resin, carboxy-modified polyurethane polyurea resin And urethane modified polyester resin. Among these, a carboxyl modified polyester resin, a carboxyl modified polyamine resin, a carboxyl modified polyurethane polyurea resin, and a urethane modified polyester resin are preferred. When the first resin component is a hydroxyl group, the second resin component can be used: epoxy-modified polyester resin, epoxy-modified polyamine resin, epoxy-modified acrylic resin, epoxy-modified Polyurethane polyurea resin, carboxyl modified polyester resin, carboxyl modified polyamido resin, carboxyl modified acrylic resin, carboxyl modified polyurethane polyurea resin, and urethane modified High quality polyester resin. Among these, a carboxyl modified polyester resin, a carboxyl modified polyamine resin, a carboxyl modified polyurethane polyurea resin, and a urethane modified polyester resin are preferred.
熱硬化性樹脂亦可包含用以促進熱硬化反應的硬化劑。熱硬化性樹脂具有第1官能基與第2官能基時,硬化劑可根據第1官能基及第2官能基的種類而適當選擇。第1官能基為環氧基、第2官能基為羥基時,硬化劑可使用咪唑系硬化劑、酚系硬化劑及陽離子系硬化劑等。此等硬化劑可單獨使用一種,亦可併用二種以上。此外,關於任意成分亦可包含消泡劑、抗氧化劑、黏度調整劑、稀釋劑、防沉劑、調平劑、偶合劑、著色劑及阻燃劑等。The thermosetting resin may contain a curing agent for promoting a thermosetting reaction. When the thermosetting resin has a first functional group and a second functional group, the curing agent can be appropriately selected depending on the types of the first functional group and the second functional group. When the first functional group is an epoxy group and the second functional group is a hydroxyl group, an imidazole-based hardener, a phenol-based hardener, or a cationic hardener can be used as the hardener. These hardeners may be used singly or in combination of two or more kinds. In addition, the optional component may include a defoamer, an antioxidant, a viscosity modifier, a diluent, an anti-settling agent, a leveling agent, a coupling agent, a colorant, a flame retardant, and the like.
導電性填料並無特別限定,例如可使用金屬填料、金屬被覆樹脂填料、碳填料及其等之混合物。關於金屬填料,可列舉:銅粉、銀粉、鎳粉、銀包銅粉、金包銅粉、銀包鎳粉及金包鎳粉等。此等金屬粉可藉由電解法、霧化法或還原法等來製作。其中,較佳為銀粉、銀包銅粉及銅粉中之任一種。The conductive filler is not particularly limited, and examples thereof include metal fillers, metal-coated resin fillers, carbon fillers, and mixtures thereof. Examples of the metal filler include copper powder, silver powder, nickel powder, silver-coated copper powder, gold-coated copper powder, silver-coated nickel powder, and gold-coated nickel powder. These metal powders can be produced by an electrolytic method, an atomization method, or a reduction method. Among them, any one of silver powder, silver-coated copper powder, and copper powder is preferred.
由填料彼此接觸之觀點來看,導電性填料的平均粒徑較佳為1μm以上、更佳為3μm以上,且較佳為50μm以下、更佳為40μm以下。導電性填料的形狀並無特別限定,可作成球狀、小片狀、樹枝狀或纖維狀等。From the viewpoint that the fillers are in contact with each other, the average particle diameter of the conductive filler is preferably 1 μm or more, more preferably 3 μm or more, and preferably 50 μm or less, and more preferably 40 μm or less. The shape of the conductive filler is not particularly limited, and may be spherical, platelet-shaped, dendritic, or fibrous.
導電性填料的含量可根據用途適當選擇,於總固體成分中較佳為5質量%以上、更佳為10質量%以上,且較佳為95質量%以下、更佳為90質量%以下。由填埋性之觀點來看,較佳為70質量%以下、更佳為60質量%以下。又,要實現各向異性導電性時,則較佳為40質量%以下、更佳為35質量%以下。The content of the conductive filler can be appropriately selected according to the application, and it is preferably 5 mass% or more, more preferably 10 mass% or more, and more preferably 95 mass% or less, and more preferably 90 mass% or less in the total solid content. From the viewpoint of landfillability, it is preferably 70% by mass or less, and more preferably 60% by mass or less. When anisotropic conductivity is to be achieved, it is preferably 40% by mass or less, and more preferably 35% by mass or less.
導電性接著劑層111例如可藉由於絕緣保護層112或於形成在絕緣保護層112上的屏蔽層113上,塗佈導電性接著劑層用組成物來形成。導電性接著劑層用組成物可於導電性接著劑層用樹脂及填料中添加適量溶劑來調製。The conductive adhesive layer 111 can be formed by, for example, applying a composition for a conductive adhesive layer to the insulating protective layer 112 or the shielding layer 113 formed on the insulating protective layer 112. The composition for a conductive adhesive layer can be prepared by adding an appropriate amount of a solvent to the resin and a filler for a conductive adhesive layer.
由控制填埋性之觀點來看,導電性接著劑層111的厚度宜設為1μm~50μm。From the viewpoint of controlling the landfilling property, the thickness of the conductive adhesive layer 111 is preferably 1 μm to 50 μm.
再者,亦可視需要而於導電性接著劑層111表面貼合可剝離的保護用膜。Moreover, a peelable protective film may be laminated on the surface of the conductive adhesive layer 111 as needed.
如圖3所示,本實施形態之電磁波屏蔽膜101可與印刷配線基板102組合而作成屏蔽配線基板103。電磁波屏蔽膜101亦可為具有屏蔽層113者。As shown in FIG. 3, the electromagnetic wave shielding film 101 of this embodiment can be combined with a printed wiring board 102 to form a shielded wiring board 103. The electromagnetic wave shielding film 101 may be one having a shielding layer 113.
印刷配線基板102例如具有印刷電路,該印刷電路包含基底構件122、設置於基底構件122上的接地電路125。於基底構件122上,藉由接著劑層123接著有絕緣膜121。於絕緣膜121設置有使接地電路125露出的開口部。於接地電路125的露出部分亦可設置有鍍金層等表面層。再者,印刷配線基板102可為軟性基板,亦可為硬性基板。The printed wiring board 102 includes, for example, a printed circuit including a base member 122 and a ground circuit 125 provided on the base member 122. An insulating film 121 is adhered to the base member 122 through an adhesive layer 123. An opening is provided in the insulating film 121 to expose the ground circuit 125. A surface layer such as a gold plating layer may be provided on the exposed portion of the ground circuit 125. The printed wiring board 102 may be a flexible substrate or a rigid substrate.
將電磁波屏蔽膜101接著於印刷配線基板102時,係以導電性接着劑層111位於開口部上之方式,將電磁波屏蔽膜101配置於印刷配線基板102上。然後,藉由2片加熱至預定溫度(例如120℃)的加熱板(未圖示),從上下方向夾住電磁波屏蔽膜101與印刷配線基板102,並以預定壓力(例如0.5MPa)加壓短時間(例如5秒鐘)。藉此,電磁波屏蔽膜101會被暫時固定於印刷配線基板102。When the electromagnetic wave shielding film 101 is attached to the printed wiring board 102, the electromagnetic wave shielding film 101 is disposed on the printed wiring board 102 such that the conductive adhesive layer 111 is positioned on the opening. Then, the electromagnetic wave shielding film 101 and the printed wiring board 102 are sandwiched from above and below by two heating plates (not shown) heated to a predetermined temperature (for example, 120 ° C.) and pressurized with a predetermined pressure (for example, 0.5 MPa). Short time (for example, 5 seconds). Thereby, the electromagnetic wave shielding film 101 is temporarily fixed to the printed wiring board 102.
然後,將2片加熱板的溫度設定為比上述暫時固定時的溫度還要高溫的預定溫度(例如170℃),並以預定壓力(例如3MPa)加壓預定時間(例如30分鐘)。藉此,便可將電磁波屏蔽膜101固定於印刷配線基板102。於進行加壓時,藉由將導電性接著劑層111充分埋入開口部,便可實現電磁波屏蔽膜101所需的強度及導電性。Then, the temperature of the two heating plates is set to a predetermined temperature (for example, 170 ° C.) which is higher than the temperature at the time of the temporary fixation, and the pressure is applied for a predetermined time (for example, 30 minutes) at a predetermined pressure (for example, 3 MPa). Thereby, the electromagnetic wave shielding film 101 can be fixed to the printed wiring board 102. When the conductive adhesive layer 111 is fully buried in the opening during the pressurization, the strength and conductivity required for the electromagnetic wave shielding film 101 can be achieved.
將電磁波屏蔽膜101固定於印刷配線基板102後,將轉印膜115剝離。然後,進行用以安裝零件的焊料回焊。本實施形態之電磁波屏蔽膜101因為在電磁波屏蔽膜101固定於印刷配線基板102後可輕易剝離轉印膜115,故能使生產效率提高。After the electromagnetic wave shielding film 101 is fixed to the printed wiring board 102, the transfer film 115 is peeled. Then, solder reflow for mounting the parts is performed. Since the electromagnetic wave shielding film 101 of this embodiment can be easily peeled off after the electromagnetic wave shielding film 101 is fixed to the printed wiring board 102, the production efficiency can be improved.
[實施例]
以下,使用實施例進一步詳細地說明本發明之電磁波屏蔽膜。以下實施例為例示,並非意欲限定本發明。[Example]
Hereinafter, the electromagnetic wave shielding film of the present invention will be described in more detail using examples. The following examples are illustrative and are not intended to limit the present invention.
<製作電磁波屏蔽膜>
將離型劑塗佈於預定轉印膜的表面。於塗佈過離型劑的轉印膜表面,使用線棒來塗佈絕緣保護層用組成物,並進行加熱乾燥,藉此形成絕緣保護層。然後,利用線棒於絕緣保護層上塗佈導電性接著劑層用組成物後,進行100℃×3分鐘的乾燥,而製作出電磁波屏蔽膜。< Production of electromagnetic wave shielding film >
A release agent is applied to the surface of a predetermined transfer film. On the surface of the transfer film to which the release agent has been applied, a composition for an insulating protective layer is applied using a wire rod, and then heated and dried to form an insulating protective layer. Then, the composition for a conductive adhesive layer was coated on the insulating protective layer with a wire rod, and then dried at 100 ° C. for 3 minutes to prepare an electromagnetic wave shielding film.
絕緣保護層用組成物是作成下述2層構造:厚度2μm的聚酯系透明樹脂的硬塗層、與厚度3μm的含碳黑之環氧系黑色樹脂的軟塗層。導電性接著劑層用組成物則是設定為:將平均粒徑5μm的樹枝狀銀被覆銅粉作為導電性粒子而添加於含磷系阻燃劑之環氧系樹脂中者。導電性接著劑層的厚度設為15μm。The composition for an insulating protective layer has a two-layer structure: a hard coating layer of a polyester-based transparent resin having a thickness of 2 μm, and a soft coating layer of an epoxy-based black resin containing carbon black having a thickness of 3 μm. The composition for a conductive adhesive layer is set such that dendritic silver-coated copper powder having an average particle diameter of 5 μm is added as conductive particles to an epoxy resin containing a phosphorus-based flame retardant. The thickness of the conductive adhesive layer was set to 15 μm.
<測定表面性狀>
關於表面性狀的參數,係使用雷射顯微鏡(VK-X210、Keyence(股)公司製」、透鏡倍率50倍),根據ISO25178而進行測定。測定是針對下述面來進行:經裁切為5.0cm×5.0cm且尚未被使用的轉印膜其用以形成絕緣保護層的面。對於面內的任意10個位置進行測定,並採用其算術平均值作為測定值。又,算出標準偏差(SD)及變動係數(CV)。< Measurement of surface properties >
The parameters of the surface properties were measured in accordance with ISO25178 using a laser microscope (VK-X210, manufactured by Keyence Corporation, lens magnification: 50 times). The measurement was performed on the surface of the transfer film which was cut out to 5.0 cm × 5.0 cm and was not used yet to form an insulating protective layer. The measurement was performed at arbitrary 10 positions in the plane, and the arithmetic average value was used as the measurement value. In addition, a standard deviation (SD) and a coefficient of variation (CV) were calculated.
<測定剝離強度>
使用加壓機,並在溫度:170℃、時間:30分鐘、壓力:2~3MPa的條件下,對電磁波屏蔽膜進行加壓。當電磁波屏蔽膜回到常溫後,使用剝離強度測試儀((股)PALMEC製、PFT50S)對表面之剝離膜測定轉印膜的剝離強度。測定係於常溫且拉伸速度1000mm/分、剝離角度170°的條件下進行。測定係進行10次,並求出最小值、最大值及平均值。<Measurement of peeling strength>
Using a press, the electromagnetic wave shielding film was pressurized under conditions of temperature: 170 ° C., time: 30 minutes, and pressure: 2 to 3 MPa. After the electromagnetic wave shielding film was returned to normal temperature, the peeling strength of the transfer film was measured on the surface peeling film using a peeling strength tester ((share) PALMEC, PFT50S). The measurement was performed under the conditions of normal temperature, a stretching speed of 1000 mm / min, and a peeling angle of 170 °. The measurement system was performed 10 times, and the minimum value, the maximum value, and the average value were calculated.
(實施例1)
使用厚度為50μm的PET膜作為轉印膜。剝離轉印膜後的絕緣保護層表面成為消光表面。轉印膜的絕緣保護層形成面上的Sv為3.1μm、Sz為8.0μm、Sa為0.69μm。Sv的變動係數為0.15、Sz的變更係數為0.02。剝離強度的最小值為0.51N/50mm、最大值為0.75N/50mm、平均值為0.63N/50mm。(Example 1)
As the transfer film, a PET film having a thickness of 50 μm was used. The surface of the insulating protective layer after peeling the transfer film becomes a matte surface. Sv was 3.1 μm, Sz was 8.0 μm, and Sa was 0.69 μm on the insulating protective layer formation surface of the transfer film. The coefficient of variation of Sv is 0.15, and the coefficient of variation of Sz is 0.02. The minimum value of the peeling strength was 0.51 N / 50 mm, the maximum value was 0.75 N / 50 mm, and the average value was 0.63 N / 50 mm.
(實施例2)
使用厚度為50μm的PET膜作為轉印膜。剝離轉印膜後的絕緣保護層表面成為消光表面。轉印膜的絕緣保護層形成面上的Sv為2.5μm、Sz為6.6μm、Sa為0.41μm。Sv的變動係數為0.12、Sz的變更係數為0.08。剝離強度的最小值為0.60N/50mm、最大值為0.76N/50mm、平均值為0.68N/50mm。(Example 2)
As the transfer film, a PET film having a thickness of 50 μm was used. The surface of the insulating protective layer after peeling the transfer film becomes a matte surface. Sv was 2.5 μm, Sz was 6.6 μm, and Sa was 0.41 μm on the insulating protective layer formation surface of the transfer film. The coefficient of variation of Sv is 0.12, and the coefficient of variation of Sz is 0.08. The minimum value of the peeling strength was 0.60 N / 50 mm, the maximum value was 0.76 N / 50 mm, and the average value was 0.68 N / 50 mm.
(實施例3)
使用厚度為50μm的PET膜作為轉印膜。剝離轉印膜後的絕緣保護層表面成為消光表面。轉印膜的絕緣保護層形成面上的Sv為5.9μm、Sz為9.6μm、Sa為0.69μm。Sv的變動係數為0.07、Sz的變更係數為0.09。剝離強度的最小值為0.98N/50mm、最大值為1.50N/50mm、平均值為1.25N/50mm。(Example 3)
As the transfer film, a PET film having a thickness of 50 μm was used. The surface of the insulating protective layer after peeling the transfer film becomes a matte surface. Sv was 5.9 μm, Sz was 9.6 μm, and Sa was 0.69 μm on the insulating protective layer formation surface of the transfer film. The coefficient of variation of Sv is 0.07, and the coefficient of variation of Sz is 0.09. The minimum value of the peel strength was 0.98 N / 50 mm, the maximum value was 1.50 N / 50 mm, and the average value was 1.25 N / 50 mm.
(比較例1)
使用厚度為50μm的PET膜作為轉印膜。剝離轉印膜後的絕緣保護層表面成為消光表面。轉印膜的絕緣保護層形成面上的Sv為6.8μm、Sz為11.4μm、Sa為0.48μm。Sv的變動係數為0.43、Sz的變更係數為0.40。剝離強度的最小值為7.0N/50mm、最大值超過10N/50mm,無法測定。(Comparative example 1)
As the transfer film, a PET film having a thickness of 50 μm was used. The surface of the insulating protective layer after peeling the transfer film becomes a matte surface. Sv was 6.8 μm, Sz was 11.4 μm, and Sa was 0.48 μm on the insulating protective layer formation surface of the transfer film. The coefficient of variation of Sv is 0.43, and the coefficient of variation of Sz is 0.40. The minimum value of the peeling strength was 7.0 N / 50 mm, and the maximum value exceeded 10 N / 50 mm, and measurement was impossible.
(比較例2)
使用厚度為50μm的PET膜作為轉印膜。剝離轉印膜後的絕緣保護層表面成為具有光澤的表面。轉印膜的絕緣保護層形成面上的Sv為0.8μm、Sz為1.3μm、Sa為0.06μm。Sv的變動係數為0.23、Sz的變更係數為0.13。剝離強度的最小值為0.08N/50mm、最大值為0.15N/50mm、平均值為0.10N/50mm。(Comparative example 2)
As the transfer film, a PET film having a thickness of 50 μm was used. The surface of the insulating protective layer after peeling the transfer film becomes a glossy surface. Sv was 0.8 μm, Sz was 1.3 μm, and Sa was 0.06 μm on the insulating protective layer formation surface of the transfer film. The coefficient of variation of Sv is 0.23, and the coefficient of variation of Sz is 0.13. The minimum value of the peeling strength was 0.08 N / 50 mm, the maximum value was 0.15 N / 50 mm, and the average value was 0.10 N / 50 mm.
於表1彙總顯示各實施例及比較例的結果。除了Sv、Sz外,也還記載了關於峰度(Sku)、最小自相關長度(Sal)、表面性狀之縱橫比(Str)、突出谷部高度(Svk)及將突出谷部與核心部分離的負荷面積率(Smr2)的數據。Table 1 summarizes the results of the examples and comparative examples. In addition to Sv and Sz, it also describes the kurtosis (Sku), the minimum autocorrelation length (Sal), the aspect ratio (Str) of the surface texture, the height of the protruding valley (Svk), and the separation of the protruding valley from the core. Of the load area ratio (Smr2).
[表1]
[Table 1]
產業上之可利用性
本發明之電磁波屏蔽膜,其轉印膜容易剝離而可提高生產性。INDUSTRIAL APPLICABILITY The electromagnetic wave shielding film of the present invention can be easily peeled off from the transfer film and can improve productivity.
101‧‧‧電磁波屏蔽膜101‧‧‧ electromagnetic wave shielding film
102‧‧‧印刷配線基板 102‧‧‧printed wiring board
103‧‧‧屏蔽配線基板 103‧‧‧shielded wiring substrate
111‧‧‧導電性接著劑層 111‧‧‧ conductive adhesive layer
112‧‧‧絕緣保護層 112‧‧‧Insulation protective layer
113‧‧‧屏蔽層 113‧‧‧Shield
115‧‧‧轉印膜 115‧‧‧ transfer film
121‧‧‧絕緣膜 121‧‧‧ insulating film
122‧‧‧基底構件 122‧‧‧ base member
123‧‧‧接著劑層 123‧‧‧Adhesive layer
125‧‧‧接地電路 125‧‧‧ ground circuit
圖1係顯示一實施形態之電磁波屏蔽膜的截面圖。FIG. 1 is a sectional view showing an electromagnetic wave shielding film according to an embodiment.
圖2係顯示電磁波屏蔽膜之變化例的截面圖。 FIG. 2 is a cross-sectional view showing a modified example of the electromagnetic wave shielding film.
圖3係顯示一實施形態之使用電磁波屏蔽膜的屏蔽印刷配線基板的截面圖。 3 is a cross-sectional view showing a shielded printed wiring board using an electromagnetic wave shielding film according to an embodiment.
Claims (2)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2018-027711 | 2018-02-20 | ||
| JP2018027711A JP6426865B1 (en) | 2018-02-20 | 2018-02-20 | Electromagnetic shielding film |
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| TW201934697A true TW201934697A (en) | 2019-09-01 |
| TWI734930B TWI734930B (en) | 2021-08-01 |
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| TW107132263A TWI734930B (en) | 2018-02-20 | 2018-09-13 | Electromagnetic wave shielding film |
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| JP (1) | JP6426865B1 (en) |
| KR (1) | KR102385691B1 (en) |
| CN (1) | CN110177448A (en) |
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| TWI778832B (en) * | 2021-10-18 | 2022-09-21 | 長春石油化學股份有限公司 | Polymer film and uses of the same |
| US11746198B2 (en) | 2021-10-18 | 2023-09-05 | Chang Chun Petrochemical Co., Ltd. | Polymer film and uses of the same |
| US12232306B2 (en) | 2021-03-29 | 2025-02-18 | Tatsuta Electric Wire & Cable Co., Ltd. | Electromagnetic wave shielding film and shielded printed wiring board |
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| WO2020009230A1 (en) * | 2018-07-06 | 2020-01-09 | タツタ電線株式会社 | Affixation film for printed wiring board |
| TWI768219B (en) | 2018-07-06 | 2022-06-21 | 日商拓自達電線股份有限公司 | Adhesive film for printed wiring board |
| TWI875814B (en) * | 2019-09-30 | 2025-03-11 | 日商太陽控股股份有限公司 | Laminated structure |
| KR102103745B1 (en) * | 2020-02-06 | 2020-05-29 | (주)에이치케이 | Apparatus for attaching release film for EMI shielding film and thereof method |
| JP6954502B1 (en) * | 2020-03-26 | 2021-10-27 | 東洋紡株式会社 | Laminate for thin film layer transfer |
| CN114650720B (en) * | 2021-02-09 | 2025-06-24 | 广州方邦电子股份有限公司 | Electromagnetic shielding film and circuit board |
| CN114630482A (en) * | 2021-02-09 | 2022-06-14 | 广州方邦电子股份有限公司 | Electromagnetic shielding film and circuit board |
| CN114641124B (en) * | 2021-02-09 | 2025-11-28 | 广州方邦电子股份有限公司 | Electromagnetic shielding film and circuit board |
| CN115991919B (en) * | 2021-10-18 | 2024-12-03 | 长春石油化学股份有限公司 | Polymer membranes and their applications |
| TW202402154A (en) * | 2022-06-28 | 2024-01-01 | 日商拓自達電線股份有限公司 | Electromagnetic wave shielding film |
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| JP4197784B2 (en) * | 1998-11-24 | 2008-12-17 | 横浜ゴム株式会社 | Thermoplastic elastomer composition excellent in gas barrier property and laminate using the same |
| JP5146171B2 (en) * | 2008-07-23 | 2013-02-20 | 新日鐵住金株式会社 | Organic resin laminated steel sheet |
| KR20140102125A (en) * | 2012-06-27 | 2014-08-21 | 후루카와 덴키 고교 가부시키가이샤 | Superconducting wire |
| JP6014680B2 (en) * | 2012-11-19 | 2016-10-25 | タツタ電線株式会社 | Laminated film and shield printed wiring board |
| JP2014112576A (en) * | 2012-11-28 | 2014-06-19 | Tatsuta Electric Wire & Cable Co Ltd | Shield film |
| CN103619155B (en) * | 2013-12-09 | 2018-08-28 | 保定乐凯新材料股份有限公司 | A kind of electromagnetic shielding film with high barrier |
| JP6247577B2 (en) | 2014-03-24 | 2017-12-13 | 帝人フィルムソリューション株式会社 | Polyester film for electromagnetic wave shield film transfer |
| JP6463952B2 (en) | 2014-11-19 | 2019-02-06 | 帝人フィルムソリューション株式会社 | Biaxially oriented polyester film |
| WO2016080174A1 (en) * | 2014-11-19 | 2016-05-26 | 帝人デュポンフィルム株式会社 | Biaxially oriented polyester film |
| CN204265680U (en) * | 2014-11-25 | 2015-04-15 | 安徽明讯新材料科技股份有限公司 | A kind of new type polyimide adhesive tape |
| CN107079611A (en) * | 2014-12-05 | 2017-08-18 | 拓自达电线株式会社 | Electromagnetic shielding film |
| CN206650912U (en) * | 2017-03-01 | 2017-11-17 | 昆山雅森电子材料科技有限公司 | High shielding EMI screened films |
-
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12232306B2 (en) | 2021-03-29 | 2025-02-18 | Tatsuta Electric Wire & Cable Co., Ltd. | Electromagnetic wave shielding film and shielded printed wiring board |
| TWI778832B (en) * | 2021-10-18 | 2022-09-21 | 長春石油化學股份有限公司 | Polymer film and uses of the same |
| US11746198B2 (en) | 2021-10-18 | 2023-09-05 | Chang Chun Petrochemical Co., Ltd. | Polymer film and uses of the same |
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| Publication number | Publication date |
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| CN110177448A (en) | 2019-08-27 |
| TWI734930B (en) | 2021-08-01 |
| KR20190100006A (en) | 2019-08-28 |
| JP6426865B1 (en) | 2018-11-21 |
| KR102385691B1 (en) | 2022-04-11 |
| JP2019145639A (en) | 2019-08-29 |
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