TW201921606A - Semiconductor device manufacturing method and adhesive laminate - Google Patents

Abstract

A method for manufacturing a semiconductor device, comprising: a step of attaching a substrate (11) and a semiconductor element via an adhesive layer; a step of curing the adhesive layer to form a hardened adhesive layer (12A); and sealing. A step of forming a sealing body (3) having a sealing resin layer by the plurality of semiconductor elements, a step of peeling the substrate (11) from the sealing body (3) without peeling the hardening adhesive layer (12A) from the sealing body (3) A step of forming a redistribution layer electrically connected to the semiconductor element, and a step of electrically connecting an external terminal electrode to the redistribution layer.

Description

Method for manufacturing semiconductor device, and adhesive laminate

This invention relates to the manufacturing method of a semiconductor device, and a laminated body.

In recent years, the miniaturization, weight reduction, and high performance of electronic devices are progressing. Semiconductor devices mounted in electronic devices are also required to be reduced in size, thickness, and density. A semiconductor wafer (in some cases, it is simply called a wafer) is a package mounted near this size. Such a package system is also referred to as a Chip Scale Package (CSP). One of the processes for manufacturing a CSP includes a wafer level package (Wafer Level Package; WLP). Before the WLP system singulates the package by singulation, external electrodes and the like are formed on the chip circuit formation surface, and finally, the package wafer including the chip is singulated and singulated. Examples of the WLP system include a fan-in type and a fan-out type. In the fan-out type WLP (hereinafter, it may be abbreviated as FO-WLP), a semiconductor wafer is formed by covering a semiconductor wafer with a sealing member so as to form an area larger than the wafer size, and a redistribution layer and The external electrode is formed not only on the circuit surface of the semiconductor wafer but also on the surface area of the sealing member.
For example, Document 1 (Japanese Patent Application Laid-Open No. 2012-62372) describes an adhesive tape for temporarily fixing a wafer used in a manufacturing method such as WLP. Document 1 describes that the adhesive tape is used to prevent the wafer from being held away from the specified position due to the pressure when the resin is sealed. Such a failure is referred to as a “die shift”.
However, the adhesive tape described in Document 1 is a tape for temporary fixing, so the adhesive force is low, and there is a concern that the wafer may deviate from a specified position due to the pressure at the time of resin sealing.

An object of the present invention is to provide a method for manufacturing a semiconductor device and an adhesive laminate used in the method. The manufacturing method is capable of suppressing a defect in which a semiconductor element such as a wafer deviates from a specified position due to a pressure at the time of resin sealing. Conditions can be highly functional.
A method for manufacturing a semiconductor device according to an aspect of the present invention includes a step of attaching a substrate and a semiconductor element via an adhesive layer, a step of curing the adhesive layer to form a cured adhesive layer, A step of sealing a plurality of the semiconductor elements to form a sealing body having a sealing resin layer; a step of peeling the base material from the sealing body without peeling the hardened adhesive layer from the sealing body; and forming an electrically connected with the semiconductor element A step of rewiring a layer and a step of electrically connecting an external terminal electrode to the aforementioned redistribution layer.
In a method for manufacturing a semiconductor device according to an aspect of the present invention, it is preferable that the semiconductor device includes a plurality of the semiconductor elements and the adhesive layer having the adhesive layer of the adhesive layer of the substrate and the adhesive layer.
In the method for manufacturing a semiconductor device according to an aspect of the present invention, it is preferable that the adhesive layer is directly laminated on the substrate.
In a method for manufacturing a semiconductor device according to an aspect of the present invention, it is preferable that the adhesive layer is included between the adhesive layer and the substrate.
In the method for manufacturing a semiconductor device according to an aspect of the present invention, the step of peeling the substrate from the sealing body is not to peel the hardening adhesive layer from the sealing body, but to bond the hardening and adhesive layer to the adhesive layer. The step of interfacial peeling of the agent layer is preferred.
In the method for manufacturing a semiconductor device according to an aspect of the present invention, it is preferable that the aforementioned adhesive layer is a thermally expandable adhesive layer.
In the method for manufacturing a semiconductor device according to an aspect of the present invention, it is preferable that the semiconductor element has the adhesive layer.
In the method for manufacturing a semiconductor device according to one aspect of the present invention, it is preferable that the adhesive layer is an adhesive sheet having the substrate and an adhesive layer, and the adhesive layer is preferably attached to the semiconductor element.
In the method for manufacturing a semiconductor device according to one aspect of the present invention, the step of peeling the substrate from the sealing body is not to peel the hardening adhesive layer from the sealing body, but to bond the hardening adhesive layer to the hardening adhesive layer. The step of interfacial peeling of the agent layer is preferred.
In a method for manufacturing a semiconductor device according to an aspect of the present invention, the adhesive layer system includes at least a first adhesive layer and a second adhesive layer, and the first adhesive layer and the second adhesive layer system. It is better that the materials are different from each other.
In a method for manufacturing a semiconductor device according to an aspect of the present invention, the step of curing the adhesive layer to form the cured adhesive layer is curing the first adhesive layer to form a first cured adhesive layer, The step of hardening the second adhesive layer to form a second hardened adhesive layer is preferred.
In the method for manufacturing a semiconductor device according to one aspect of the present invention, when a plurality of the semiconductor element and the substrate are attached via the adhesive layer, a circuit surface having a connection terminal with the semiconductor element is connected. The element back surface on the opposite side is attached to the adhesive layer, and after sealing the plurality of semiconductor elements to form the sealing body, a part or the whole of the sealing resin layer covering the circuit surface is removed to expose the connection terminals. The redistribution layer is preferably electrically connected to the exposed connection terminal.
In the method for manufacturing a semiconductor device according to one aspect of the present invention, when a plurality of the semiconductor elements and the base material are pasted through the adhesive layer, the circuit surface of the semiconductor element having the connection terminals is oriented toward The adhesive layer is affixed, and after the substrate is peeled from the sealing body, a part or the entirety of the hardened adhesive layer covering the circuit surface is removed to expose the connection terminals, and the rewiring layer is electrically connected to the The exposed connection terminal is preferable.
Before the method for manufacturing a semiconductor device according to an aspect of the present invention, the step of curing the adhesive layer to form the cured adhesive layer, it is preferable to attach a reinforcing frame to the adhesive layer.
In one aspect of the present invention, the adhesive lamination system includes a base material and an adhesive layer containing an adhesive composition, wherein the adhesive composition system contains an adhesive polymer component and a hardening component, and is It is used in a manufacturing process of a semiconductor device. The manufacturing process of the semiconductor device includes a step of attaching a plurality of semiconductor elements to the aforementioned adhesive layer of the aforementioned adhesive laminate, and a step of curing the aforementioned adhesive layer to form a hardened adhesive layer. And a step of sealing a plurality of the semiconductor elements to form a sealing body, a step of not peeling the hardening adhesive layer from the sealing body, but a step of peeling the substrate from the sealing body, and forming a rewiring layer electrically connected to the semiconductor element And a step of electrically connecting the external terminal electrode to the redistribution layer.
According to one aspect of the present invention, it is possible to provide a method for manufacturing a semiconductor device, which can suppress a defect in which a semiconductor element such as a wafer deviates from a specified position due to a pressure at the time of resin sealing, and can be highly functional. .
Furthermore, according to one aspect of the present invention, it is possible to provide an adhesive laminate which can suppress a semiconductor device such as a wafer from being deviated from a predetermined position due to a pressure at the time of resin sealing in a method for manufacturing a semiconductor device. , Can be a high-performance semiconductor device.
As a high-performance system, for example, it has become a semiconductor device that can obtain high-definition and relative position accuracy of each member, and has a redistribution layer and external terminal electrodes.

A method for manufacturing a semiconductor device according to an embodiment of the present invention uses an adhesive laminate. The next lamination system includes a substrate and an adhesive layer. In this specification, the adhesive lamination system is not an adhesive sheet (temporary fixing sheet) that is peeled after being attached to an adherend, and the adhesive layer provided in the adhesive laminate is compared with the adhesive sheet. As for the adhesive layer, it has a strong adhesive force to be fixed to the adherend.
An adhesive laminate system according to an embodiment of the present invention includes an adhesive laminate of a substrate and an adhesive layer containing an adhesive composition; the adhesive composition contains an adhesive polymer component and a hardening component; and is used in A manufacturing process of a semiconductor device, the manufacturing process includes a step of attaching a plurality of semiconductor elements to the aforementioned adhesive layer of the aforementioned laminated body, a step of curing the aforementioned adhesive layer to form a hardened adhesive layer, and sealing the aforementioned plural A step of forming a sealing body by a semiconductor element, a step of removing the base material from the sealing body without peeling the hardening adhesive layer from the sealing body, a step of forming a rewiring layer electrically connected to the semiconductor element, and an external terminal electrode The step of electrically connecting to the redistribution layer.
A method for manufacturing a semiconductor device according to an aspect of the present invention includes a step of attaching a plurality of semiconductor elements to the aforementioned adhesive layer of a laminated body, a step of curing the aforementioned adhesive layer to form a cured adhesive layer, and sealing. A step of forming a sealing body having a sealing resin layer by the plurality of semiconductor elements, a step of peeling the base material from the sealing body without peeling the hardened adhesive layer from the sealing body, and forming a rewiring electrically connected to the semiconductor element Step of electrically connecting the external terminal electrode to the redistribution layer.
Moreover, in the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention, the adhesive laminated body containing an adhesive layer and an adhesive layer may be used. Such an adhesive laminate system includes a substrate, an adhesive layer, and an adhesive layer.
In addition, a method of manufacturing a semiconductor device according to an embodiment of the present invention may also use a semiconductor device having an adhesive layer. In this case, the adhesive layer provided in the semiconductor device has a stronger adhesive force to be fixed to the adherend than the adhesive layer of the adhesive sheet.
In addition, in the method for manufacturing a semiconductor device according to an embodiment of the present invention, the adhesive layer may include a first adhesive layer and a second adhesive layer.

[First Embodiment]
The method for manufacturing a semiconductor device according to this embodiment includes a step of attaching a plurality of semiconductor elements to an adhesive layer of a laminate, a step of curing the adhesive layer to form a cured adhesive layer, and sealing the plurality of semiconductors. A step of forming a sealing body having a sealing resin layer from the device, a step of peeling the substrate from the sealing body without peeling the hardening adhesive layer from the sealing body, a step of forming a rewiring layer electrically connected to the semiconductor element, A step of electrically connecting an external terminal electrode to the redistribution layer; when attaching a plurality of the semiconductor elements to the bonding layer, the back surface of the element opposite to the circuit surface of the semiconductor element having the connection terminal is oriented toward The adhesive layer is attached, and after the semiconductor element is sealed to form the sealing body, a part or the entirety of the sealing resin layer covering the circuit surface is removed to expose the connection terminals, and the rewiring layer is electrically connected to The aforementioned connection terminals have been exposed.
Prior to the step of curing the adhesive layer to form the cured adhesive layer, it is preferable to attach a reinforcing frame to the adhesive layer.

(Base material)
The base material of the bonding laminate of this embodiment is a member that supports an adhesive layer and the like. The substrate of the subsequent laminate is not particularly limited.
The base material is, for example, a resin film. Examples of the resin film system include polyethylene films, polypropylene films, polybutene films, polybutadiene films, polymethylpentene films, polyvinyl chloride films, vinyl chloride copolymer films, and polyterephthalic acid. Ethylene film, Polyethylene naphthalate film, Polybutylene terephthalate film, Polyurethane film, Ethylene vinyl acetate copolymer film, Ion polymer resin film, Ethylene Base) an acrylic copolymer film, an ethylene (meth) acrylate copolymer film, a polystyrene film, a polycarbonate film, a polyimide film, and a fluororesin film . Moreover, you may use these crosslinked films as a base material. Further, the substrate may be a laminated film of this type.
The base material may be, for example, a rigid support. The material of the rigid support may be appropriately determined in consideration of mechanical strength and heat resistance. Examples of the material of the rigid support include metal materials, non-metal inorganic materials, resin materials, and composite materials. Examples of the metal material include SUS. Examples of non-metallic inorganic materials include glass and silicon wafers. Examples of the resin material include epoxy resin, ABS, acrylic, engineering plastic, super engineering plastic, polyimide, polyimide, and the like. Examples of the composite material system include glass epoxy resin. Among these, it is particularly preferable that the material of the rigid support is any material selected from the group consisting of SUS, glass, and silicon wafers. Examples of engineering plastics include nylon, polycarbonate (PC), and polyethylene terephthalate (PET). Examples of the super engineering plastics include polyphenylene sulfide (PPS), polyether fluorene (PES), and polyether ether ketone (PEEK).
The thickness of the substrate is not particularly limited. The thickness of the substrate is preferably 20 μm or more and 50 mm or less, and more preferably 60 μm or more and 20 mm or less. When the thickness of the base material is set to the above range, when the base material is a resin film, the adhesive layer has sufficient flexibility, and thus exhibits good adhesion to the workpiece. The workpiece is, for example, a semiconductor element, and a more specific example is a semiconductor wafer. When the base material is a rigid support, the thickness of the rigid support may be appropriately determined in consideration of mechanical strength, operability, and the like. The thickness of the rigid support is, for example, 100 μm or more and 50 mm or less.

(Adhesive layer)
The adhesive layer of the adhesive laminate of this embodiment preferably contains a hardenable adhesive composition that is hardened by receiving energy from the outside. Examples of the externally supplied energy system include ultraviolet rays, electron beams, and heat. The adhesive layer system preferably contains at least one of an ultraviolet curing adhesive and a thermosetting adhesive. When the base material of the adhesive laminate has heat resistance, the generation of residual stress during thermal curing can be suppressed, so the adhesive layer is preferably a thermosetting adhesive layer containing a thermal curing adhesive.
The adhesive layer system contains, for example, a first adhesive composition. The first adhesive composition system contains an adhesive polymer component (A) and a curable component (B).

(A) Adhesive polymer composition
An adhesive polymer component (A) is used in order to provide sufficient adhesiveness and film-forming properties (sheet-forming properties) to the adhesive layer. As the polymer component (A) of the binder, conventionally known polymers can be used, and specifically, acrylic polymers, polyester resins, urethane resins, acrylic urethane resins, and polysilicon can be used. Oxygen resins and rubber-based polymers.
The weight average molecular weight (Mw) of the adhesive polymer component (A) is preferably 10,000 or more and 2 million or less, and more preferably 100,000 or more and 1.2 million or less. If the weight average molecular weight of the adhesive polymer component (A) is too low, the adhesive force between the adhesive layer and the adhesive sheet becomes high, which may cause poor transfer of the adhesive layer. If the weight average molecular weight is too high, the adhesiveness of the adhesive layer may occur. If it is lowered, it may become impossible to transfer to a wafer or the like, or the protective film may be peeled from the wafer or the like after the transfer.
In this specification, the weight average molecular weight (Mw) is a standard polystyrene conversion value measured by the Gel Permeation Chromatography (GPC) method.
As the binder polymer component (A), an acrylic polymer can be preferably used. The glass transition temperature (Tg) of the acrylic polymer is preferably in a range of -60 ° C or higher and 50 ° C or lower, more preferably -50 ° C or higher and 40 ° C or lower, and further preferably in a range of -40 ° C or higher and 30 ° C or lower. If the glass transition temperature of the acrylic polymer is too low, the peeling force between the adhesive layer and the adhesive sheet may increase, resulting in poor transfer of the adhesive layer. If the glass transition temperature is too high, the adhesiveness of the adhesive layer may be lowered, making it impossible. Transfer to a wafer or the like, or peeling of the protective film from the wafer or the like after transfer.
Examples of the single system constituting the acrylic polymer include a (meth) acrylate monomer or the derivative. For example, an alkyl (meth) acrylate having an alkyl group having a carbon number of 1 to 18 may be specifically exemplified by meth (meth) acrylate, ethyl (meth) acrylate, and propyl. (Meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and the like. Specific examples of the (meth) acrylate having a cyclic skeleton include cyclohexyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, and Cyclopentyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, fluorenimine (meth) acrylate, and the like. Examples of the monomer having a functional group include methylol (meth) acrylate, 2-hydroxyethyl (meth) acrylate, and 2-hydroxypropyl (meth) acrylate having a hydroxyl group. Examples of the single system constituting the acrylic polymer include a glycidyl (meth) acrylate having an epoxy group. The acrylic polymer is preferably an acrylic polymer containing a monomer having a hydroxyl group, and is compatible with a hardening component (B) described later. The acrylic polymer may be copolymerized by selecting at least one monomer selected from the group consisting of acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, and styrene.
Furthermore, as the adhesive polymer component (A), a thermoplastic resin may be blended to maintain the flexibility of the cured protective film (curing adhesive layer). As such a thermoplastic resin, a thermoplastic resin having a weight average molecular weight of 1,000 or more and 100,000 or less is preferable, and a thermoplastic resin of 3,000 or more and 80,000 or less is more preferable. The glass transition temperature of the thermoplastic resin is preferably -30 ° C or higher and 120 ° C or lower, and more preferably -20 ° C or higher and 120 ° C or lower. Examples of the thermoplastic resin system include polyester resin, urethane resin, phenoxy resin, polybutene, polybutadiene, and polystyrene. These thermoplastic resins can be used singly or in combination of two or more kinds. The first adhesive composition contains the above-mentioned thermoplastic resin as the adhesive polymer component (A), and the adhesive layer follows the transfer surface of the adhesive layer to suppress generation of voids and the like.

(B) hardening component
As the curable component (B), at least one of a thermosetting component and an energy ray-curable component can be used. As the curable component (B), both a thermosetting component and an energy ray-curable component may be used.
As the thermosetting component system, a thermosetting resin and a thermosetting agent can be used. The thermosetting resin is preferably an epoxy resin, for example.
As the epoxy resin system, conventionally known epoxy resins can be used. Specific examples of the epoxy resin include a polyfunctional epoxy resin, a bisphenol A diglycidyl ether, a hydride of a bisphenol A diglycidyl ether, an o-cresol novolac epoxy resin, and dicyclopentane. Ethylene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, and phenylene skeleton type epoxy resin, etc., which have more than two functional epoxy compounds in the molecule . The epoxy resins can be used alone or in combination of two or more.
The adhesive layer system preferably contains 1 part by mass or more and 1000 parts by mass or less, more preferably 10 parts by mass or more and 500 parts by mass, with respect to 100 parts by mass of the adhesive polymer component (A). It is more preferably 20 parts by mass or more and 200 parts by mass or less. When content of a thermosetting resin is less than 1 mass part, sufficient adhesiveness may not be acquired. When the content of the thermosetting resin is more than 1000 parts by mass, the peeling force between the adhesive layer and the substrate becomes high, and transfer failure of the adhesive layer may occur.
The thermosetting agent functions as a curing agent for a thermosetting resin, particularly for an epoxy resin. As a preferable thermosetting agent, a compound which has 2 or more functional groups which can react with an epoxy group in 1 molecule is mentioned. Examples of the functional group capable of reacting with an epoxy group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amine group, a carboxyl group, and an acid anhydride group. Among these functional groups, a group of at least one selected from the group consisting of a phenolic hydroxyl group, an amine group, an acid anhydride group, and the like is preferable, and at least one group selected from the group consisting of a phenolic hydroxyl group and an amine group The base is better.
Specific examples of the phenol-based hardener include polyfunctional phenol resins, biphenols, novolac-type phenol resins, dicyclopentadiene-based phenol resins, neo-phenol-based phenol resins, and aralkylphenol resins as amines. Specific examples of the curing agent include DICY (dicyanodiamine). These thermosetting agents can be used singly or in combination of two or more kinds.
The content of the thermosetting agent is more preferably 0.1 parts by mass or more and 500 parts by mass or less based on 100 parts by mass of the thermosetting resin, and more preferably 1 part by mass or more and 200 parts by mass or less. If the content of the thermosetting agent is small, there is a case where the hardening is insufficient and adhesion cannot be obtained. In addition, if the content of the thermosetting agent is excessive, the moisture absorption rate of the adhesive layer is high and the reliability of the semiconductor device is reduced.
The adhesive layer is a curable component (B), and when a thermosetting component is contained, the adhesive layer is thermosetting. In this case, it can be hardened by heating an adhesive layer. In the case where the adhesive laminate of the present embodiment has heat resistance in the base material, it is difficult to cause residual stress in the base material to cause a problem when the adhesive layer is thermally cured.
As the energy-ray-curable component system, a low-molecular compound (energy-ray-polymerizable compound) that can be polymerized and hardened when it is irradiated with energy rays such as ultraviolet rays or electron beams can be used. Specific examples of such an energy ray-curable component include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, or 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, acrylate oligoester, urethane acrylate oligomer, epoxy resin Acrylate compounds such as high-quality acrylates, polyether acrylates, and ikonic acid oligomers.
The energy ray polymerizable compound has at least one polymerizable double bond in the molecule.
The weight-average molecular weight of the energy ray polymerizable compound is usually 100 or more and 30,000 or less, preferably 300 or more and 10,000 or less.
The blending amount of the energy ray polymerizable compound is preferably 1 part by mass or more and 1500 parts by mass or less, more preferably 10 parts by mass or more and 500 parts by mass based on 100 parts by mass of the adhesive polymer component (A) It is more preferably 20 parts by mass or more and 200 parts by mass or less.
As the energy ray-curable component, an energy ray-curable polymer can also be used, which is formed by bonding an energy ray polymerizable group to the main chain or side chain of the binder polymer component (A). Such an energy ray-curable polymer has both a function as a binder polymer component (A) and a function as a curable component (B).
The main skeleton of the energy ray-curable polymer is not particularly limited. The main skeleton of the energy ray-curable polymer is preferably an acrylic polymer which is widely used as a binder polymer component (A). The main skeleton of the energy ray-curable polymer is preferably polyester or polyether. Since it is easy to control the synthesis and physical properties, it is more preferable to use an acrylic polymer as the main skeleton of the energy ray-curable polymer.
An energy ray polymerizable group bonded to the main chain or side chain of the energy ray-curable polymer, such as a group containing an energy ray polymerizable carbon-carbon double bond. Specific examples of the energy ray polymerizable group include a (meth) acrylfluorenyl group and the like. The energy ray polymerizable system may be bonded to the energy ray-curable polymer through an alkylene group, an alkyleneoxy group, or a polyalkyleneoxy group.
The weight-average molecular weight (Mw) of the energy-ray-curable polymer to which the energy-ray polymerizable group has been bonded is preferably 10,000 or more and 2 million or less, and more preferably 100,000 or more and 1.5 million or less.
The glass transition temperature (Tg) of the energy ray-curable polymer is preferably -60 ° C or higher and 50 ° C or lower, more preferably -50 ° C or higher and 40 ° C or lower, and more preferably -40 ° C or higher and 30 ° C or lower.
The energy ray-curable polymer is obtained by, for example, reacting an acrylic polymer containing a functional group with a polymerizable group-containing compound. Examples of the functional group system of the acrylic polymer containing this functional group include a hydroxyl group, a carboxyl group, an amine group, a substituted amine group, and an epoxy group. The polymerizable group-containing compound is a substituent capable of reacting with the functional group of the acrylic polymer and an energy ray polymerizable carbon-carbon double bond, and has one or more and five or less per molecule. Examples of the substituent system that reacts with the functional group of the acrylic polymer include an isocyanate group, a glycidyl group, and a carboxyl group.
Examples of the polymerizable group-containing compound system include (meth) acryloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, (meth) acrylfluorenyl isocyanate, and allyl Isocyanate, glycidyl (meth) acrylate, (meth) acrylic acid, and the like.
An acrylic polymer is a (meth) acrylic monomer or a derivative thereof having at least one functional group selected from the group consisting of a hydroxyl group, a carboxyl group, an amine group, a substituted amine group, an epoxy group, and the like, and is copolymerizable therewith. Other (meth) acrylic acid ester monomers or copolymers composed of the derivatives are preferred.
Examples of the (meth) acrylic acid monomer having a functional group such as a hydroxyl group, a carboxyl group, an amine group, a substituted amino group, an epoxy group, or the like are 2-hydroxyethyl (meth) acrylic acid having a hydroxyl group. Esters and 2-hydroxypropyl (meth) acrylates, acrylic acid having carboxyl groups, methacrylic acid and itaconic acid, and glycidyl methacrylate and glycidyl acrylate having epoxy groups.
Examples of other (meth) acrylic acid ester monomers or derivatives thereof that are copolymerizable with the (meth) acrylic acid monomer include, for example, alkyl (meth) groups having 1 to 18 carbon atoms Specific examples of acrylate include meth (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, and 2-ethyl Hexyl (meth) acrylate and the like.
Examples of other (meth) acrylic acid ester monomers or derivatives thereof copolymerizable with the (meth) acrylic acid monomer include (meth) acrylic acid esters having a cyclic skeleton, and specific examples thereof Cyclohexyl (meth) acrylate, benzyl (meth) acrylate, isobornyl acrylate, dicyclopentyl acrylate, dicyclopentenyl acrylate, dicyclopentenyl ethyl acrylate, and醯 imine acrylate and so on. The acrylic polymer may be copolymerized by selecting at least any one of a group consisting of vinyl acetate, acrylonitrile, and styrene, for example.
Even in the case of using an energy ray-curable polymer, the aforementioned energy ray polymerizable compound may be used in combination, and the binder polymer component (A) may be used in combination. The relationship between the blending amounts of these three (adhesive polymer component (A), energy ray polymerizable compound, and energy ray hardening polymer) in the adhesive layer of this embodiment is relative to the energy ray hardening type. For the total mass of the polymer and the binder polymer component (A) of 100 parts by mass, the energy ray polymerizable compound preferably contains 1 part by mass or more and 1500 parts by mass or less, more preferably 10 parts by mass or more, 500 parts by mass or less, more preferably 20 parts by mass or more and 200 parts by mass or less.
By imparting energy ray hardenability to the adhesive layer, the adhesive layer can be easily and quickly cured in a short time, and the production efficiency of the wafer with the cured adhesive layer is improved. The hardening adhesive layer system can also function as a protective film for protecting a semiconductor element. Previously, protective films for semiconductor devices such as wafers were generally formed of thermosetting resins such as epoxy resins. However, the curing temperature of thermosetting resins exceeded 200 ° C, and the curing time required about 2 hours. Will become an obstacle to improve production efficiency. However, the energy-ray-curable adhesive layer is cured in a short time by irradiation with energy rays, so that a protective film can be easily formed, which can contribute to the improvement of production efficiency.

‧Other ingredients
The adhesive layer system may contain the following components as other components in addition to the adhesive polymer component (A) and the curable component (B). The adhesive layer system may include, as other components, a coloring agent (C), a hardening accelerator (D), a coupling agent (E), an inorganic filler (F), a photopolymerization initiator (G), and a crosslinking agent ( H) and at least one selected from the group consisting of the universal additive (I).

(C) Colorant
It is preferable that the adhesive layer system contains a colorant (C). The coloring agent is mixed in the adhesive layer, and when the semiconductor device is installed in the machine, the infrared rays generated from the surrounding devices are shielded, which can prevent the failure of the semiconductor device caused by the infrared rays. In addition, the hardened adhesive layer (protective film) obtained by hardening the adhesive layer improves the visibility of characters at the time of printing such as a product number. That is, the semiconductor device or semiconductor wafer on which the protective film has been formed is attached to the surface of the protective film, and the type and the like are usually printed by a laser marking method (for example, a method of printing the surface of the protective film by laser light) Printing. When the protective film contains the colorant (C), the contrast between the portion of the protective film that has been scraped by the laser light and the portion that is not so can be fully obtained, and the visibility is improved. As the colorant (C), at least any one of an organic pigment, an inorganic pigment, an organic dye, and an inorganic dye can be used. The colorant (C) is preferably a black pigment from the viewpoint of electromagnetic wave and infrared shielding properties. It is not specifically limited as a black pigment system. Examples of the black pigment system include carbon black, iron oxide, manganese dioxide, aniline black, and activated carbon. From the viewpoint of improving the reliability of semiconductor devices, carbon black is particularly preferable as a black pigment. The colorant (C) may be used alone or in combination of two or more. In the present embodiment, a coloring agent that reduces the transmittance of at least one of visible light and infrared rays and ultraviolet rays is used. When the transmittance of ultraviolet rays has been reduced, the high curing property of the adhesive layer is particularly excellent. In addition to the black pigment described above, the coloring agent that reduces the transmittance of at least any one of visible light and infrared rays and ultraviolet rays is absorbing or reflecting in a wavelength region of at least any one of visible light and infrared rays and ultraviolet rays The coloring agent is not particularly limited.
The blending amount of the colorant (C) is more preferably 0.1 parts by mass or more and 35 parts by mass or less, and more preferably 0.5 parts by mass or more and 25 parts by mass or less based on 100 parts by mass of the total solid content constituting the adhesive layer. 1 mass part or more and 15 mass parts or less is more preferable.

(D) Hardening accelerator
The hardening accelerator (D) is used to adjust the hardening speed of the adhesive layer. The hardening accelerator (D) is particularly preferably used when the epoxy resin and the thermosetting agent are used together in the hardening component (B).
The hardening accelerator (D) is preferably at least one selected from the group consisting of tertiary amines, imidazoles, organic phosphines, and tetraphenylboron salts.
Examples of the tertiary amines include triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and ginsyl (dimethylaminomethyl) phenol.
Examples of the imidazoles include 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dimethylol imidazole, and 2-phenyl 4-methyl-5-hydroxymethylimidazole and the like.
Examples of the organic phosphine-based system include tributylphosphine, diphenylphosphine, and triphenylphosphine.
Examples of the tetraphenylboronate system include tetraphenylphosphonium tetraphenylborate and triphenylphosphinetetraphenylborate.
The hardening accelerator (D) can be used alone or in combination of two or more.
The hardening accelerator (D) is preferably contained in an amount of 0.01 parts by mass or more and 10 parts by mass or less with respect to 100 parts by mass of the hardenable component (B), and in an amount of 0.1 parts by mass or more and 1 part by mass or less Contains better. By containing the hardening accelerator (D) in an amount within the above range, the adhesive layer has excellent adhesive properties even when exposed to high temperature and high humidity conditions. In addition, by including the hardening accelerator (D) in an amount within the above range, the adhesive layer system can achieve high reliability even when exposed to severe reflow conditions. If the content of the hardening accelerator (D) is small, there is a concern that the hardening is insufficient and sufficient adhesion characteristics cannot be obtained. If the content of the hardening accelerator having a high polarity is excessive, the hardening is promoted under conditions of high temperature and high humidity. The agent moves to the bonding interface side of the adhesive layer to segregate, and there is a concern that the reliability of the semiconductor device is reduced.

(E) Coupling agent
The coupling agent (E) can also be used in order to improve at least any one of the adhesiveness of the adhesive layer to the semiconductor element, the adhesiveness, and the cohesiveness of the cured adhesive layer (protective film). In addition, by using the coupling agent (E), the water resistance can be improved without impairing the heat resistance of the hardened adhesive layer (protective film) obtained by curing the adhesive layer.
The coupling agent (E) is preferably a compound having a group that reacts with a functional group such as a binder polymer component (A) or a curable component (B). The coupling agent (E) is preferably a silane coupling agent. Examples of such a coupling agent system include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and β- (3,4-epoxycyclohexyl) Ethyltrimethoxysilane, γ- (methacryloxypropyl) trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-amino group Propyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ- Ureapropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis (3-triethoxysilylpropyl) tetrasulfane, Methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane and imidazolane. The coupling agent (E) can be used alone or in combination of two or more.
The coupling agent (E) is usually 0.1 parts by mass or more and 20 parts by mass or less, and preferably 0.2 parts by mass or more, based on 100 parts by mass of the total of the adhesive polymer component (A) and the hardening component (B). 10 parts by mass or less, more preferably 0.3 parts by mass or more and 5 parts by mass or less. If the content of the coupling agent (E) is less than 0.1 parts by mass, there is a possibility that the above-mentioned effects cannot be obtained. When the content of the coupling agent (E) is more than 20 parts by mass, there is a possibility that the gas may be emitted.

(F) inorganic filler
By blending the inorganic filler (F) in the adhesive layer, the thermal expansion coefficient of the cured adhesive layer (protective film) after curing can be adjusted. By optimizing the thermal expansion coefficient of the hardened adhesive layer (protective film) after curing the semiconductor wafer, the reliability of the semiconductor device can be improved. Moreover, the moisture absorption rate of the hardening adhesive layer (protective film) after hardening can also be reduced.
Preferred inorganic fillers include powders of silicon dioxide, aluminum oxide, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide, and boron nitride, beads of such powders, Single crystal fiber and glass fiber. Among these inorganic fillers, silica dioxide filler and alumina filler are preferred. The said inorganic filler (F) can be used individually or in mixture of 2 or more types. The content of the inorganic filler (F) is usually adjusted within a range of 1 part by mass or more and 80 parts by mass or less with respect to 100 parts by mass of the total solid content constituting the adhesive layer.

(G) Photopolymerization initiator
When the adhesive layer contains an energy ray-curable component as the curable component (B), the energy ray-curable component is hardened by irradiating energy rays such as ultraviolet rays during the use. In this case, by including the photopolymerization initiator (G) in the composition constituting the adhesive layer, the polymerization hardening time can be shortened, and the amount of light irradiation can be reduced.
Specific examples of such a photopolymerization initiator (G) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, Benzoin isobutyl ether, benzoin benzoic acid, methyl benzoate, benzoic acid dimethyl ketal, 2,4-diethylthioxanthone, α-hydroxycyclohexylphenyl ketone, benzyl Diphenylsulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diethylfluorenyl, 1,2-diphenylmethane, 2-hydroxy-2- Methyl-1- [4- (1-methylvinyl) phenyl] acetone, 2,4,6-trimethylbenzylidene diphenylphosphine oxide, β-chloroanthraquinone, and the like. The photopolymerization initiator (G) may be used alone or in combination of two or more.
The proportion of the photopolymerization initiator (G) is preferably 0.1 mass parts or more and 10 mass parts or less relative to 100 mass parts of the energy ray-curable component, and 1 mass part or more and 5 mass parts or less Better. If the blending ratio of the photopolymerization initiator (G) is less than 0.1 parts by mass, there is a concern that the transferability cannot be satisfied due to insufficient photopolymerization. If the blending ratio of the photopolymerization initiator (G) is more than 10 parts by mass, a residue that does not contribute to photopolymerization is generated, and there is a concern that the hardenability of the adhesive layer becomes insufficient.

(H) Crosslinking agent
In order to adjust the initial adhesive force and cohesive force of the adhesive layer, a crosslinking agent (H) may be added to the adhesive layer. Examples of the crosslinking agent (H) include organic polyisocyanate compounds and organic polyimide compounds.
Examples of the organic polyisocyanate compounds include aromatic polyisocyanate compounds, aliphatic polyisocyanate compounds, alicyclic polyisocyanate compounds, and terpolymers of these organic polyisocyanate compounds, and the combination of these organic polyisocyanate compounds and A terminal isocyanate urethane prepolymer and the like obtained by reacting a polyol compound.
Examples of the organic polyisocyanate compound include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, and diphenylmethane-4, 4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4 '-Diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, trimethylolpropane adduct toluene diisocyanate and lysine isocyanate.
Examples of the organic polyimide compound include N, N'-diphenylmethane-4,4'-bis (1-aziridinecarboxyamidoamine), trimethylolpropane-tri-β-aziridine Pyridylpropionate, tetramethylolmethane-tri-β-aziridinylpropionate, and N, N'-toluene-2,4-bis (1-aziridinecarboxyamidoamine) triethylenemelamine Wait.
The crosslinking agent (H) is generally 0.01 mass part or more and 20 mass parts or less, and preferably 0.1 mass based on 100 mass parts of the total amount of the adhesive polymer component (A) and the energy ray-curable polymer. It is used in a proportion of not less than 10 parts by mass and more preferably not less than 0.5 part by mass and not more than 5 parts by mass.

(I) Universal additives
In addition to the above, in the adhesive layer system, a general-purpose additive (I) may be blended as necessary. Examples of general-purpose additives include leveling agents, plasticizers, antistatic agents, antioxidants, ion trapping agents, getters, and chain transfer agents.
The adhesive layer composed of the components described above has adhesiveness and hardenability, and is easily adhered by pressing a workpiece (semiconductor wafer or wafer) in an uncured state. Then, after hardening, a hardening adhesive layer (protective film) with high impact resistance can be given at the end, and the bonding strength is also excellent, and sufficient protection function can be maintained under severe high temperature and high humidity conditions. The adhesive layer system may have a single-layer structure, and may include a multi-layer structure as long as the layer containing the above-mentioned components includes one or more layers.
The thickness of the adhesive layer is not particularly limited. The thickness of the adhesive layer is preferably 3 μm or more and 300 μm or less, more preferably 5 μm or more and 250 μm or less, and more preferably 7 μm or more and 200 μm or less.
A scale that indicates the transmittance of at least one of visible light and infrared light in the adhesive layer and ultraviolet light. The maximum transmittance at a wavelength of 300 nm to 1200 nm is preferably 20% or less, more preferably 0% or more and 15% or less. It is more preferable that it is more than 0%, 10% or less, and more preferably 0.001% or more and 8% or less. When the maximum transmittance of the adhesive layer with a wavelength of 300 nm or more and 1200 nm or less is set to the above range, when the adhesive layer contains an energy-ray-curable component (particularly, an ultraviolet-curable component), the adhesive layer is colored. In this case, the hardenability is also excellent. In addition, the reduction in the transmittance of at least one of the visible light wavelength region and the infrared wavelength region can result in the effect of preventing the failure of the semiconductor device due to infrared rays or improving the visibility of printing. The maximum transmittance of the adhesive layer at a wavelength of 300 nm or more and 1200 nm or less can be adjusted by the colorant (C). The maximum transmittance of the adhesive layer is measured using a UV-vis spectrum inspection device (manufactured by Shimadzu Corporation), and the total light transmittance of the adhesive layer (thickness: 25 μm) from 300 nm to 1200 nm is measured. The highest value (maximum transmittance).

(Manufacturing method of semiconductor device)
FIGS. 1 (FIGS. 1A to 1E) and 2 (FIGS. 2A to 2D) are diagrams showing an example of a method for manufacturing a semiconductor device according to this embodiment.
In the method for manufacturing a semiconductor device according to this embodiment, an adhesive laminate 1 including a substrate 11 and an adhesive layer 12 is used. In the adhesive laminate 1 of this embodiment, the adhesive layer 12 is directly laminated on the base material 11.
It is preferable that the adhesive layer 12 contains a hardening type adhesive which is hardened by receiving external energy. Examples of the externally supplied energy system include ultraviolet rays, electron beams, and heat. It is preferable that the adhesive layer 12 contains at least any one of an ultraviolet curing adhesive and a thermosetting adhesive. In this embodiment, the adhesive system contained in the adhesive layer 12 is, for example, the first adhesive composition described above.

‧Semiconductor wafer attaching steps
1A and 1B are schematic cross-sectional views illustrating a step of attaching the semiconductor wafer CP to the adhesive layer 12 of the laminated body 1 (the case may be referred to as a semiconductor wafer attaching step). Although FIG. 1A shows one semiconductor wafer CP, in this embodiment, a plurality of semiconductor wafers CP are attached to the adhesive layer 12 as shown in FIG. 1B. When the semiconductor wafers CP are attached, they can be attached individually, or a plurality of semiconductor wafers CP can be attached at the same time.
The semiconductor wafer CP used in this embodiment has a circuit surface W1 on which a connection terminal W3 is provided, and a wafer back surface W2 which is a back surface of an element on the opposite side to the circuit surface W1. In this embodiment, the wafer back surface W2 is attached to the adhesive layer 12.

‧Reinforcement frame attaching steps
In this embodiment, it is preferable to further include a step of attaching the reinforcing frame 2 to the laminated body 1 (the step may be referred to as a reinforcing frame attaching step) (refer to FIG. 1A and FIG. 1B). By attaching the reinforcing frame 2 to the adhesive layered body 1, the operability of the adhesive layered body 1 to which the semiconductor wafer CP is attached in the manufacturing process of the semiconductor device manufacturing method is improved.
The shape of the reinforcing frame 2 is not particularly limited. For example, a frame-shaped reinforcing frame is provided, which surrounds the entire periphery of the area to which the plurality of semiconductor wafers CP to which the laminated body 1 has been attached are attached. Another example is a reinforcing frame formed in a lattice shape surrounding each or a plurality of semiconductor wafers CP. Another example is a cross-shaped reinforcing frame that divides a region to which a plurality of semiconductor wafers CP attached to the laminated body 1 is attached into a plurality of regions.
The step of attaching the reinforcing frame 2 may be performed before the step of attaching the semiconductor wafer CP to the bonding layer 1, or may be performed after the step of attaching the semiconductor wafer CP to the bonding layer 1.

‧Adhesive layer hardening step
FIG. 1C is a schematic cross-sectional view illustrating a step of hardening the adhesive layer 12 to form a hardened adhesive layer 12A (the case may be referred to as an adhesive layer hardening step). By hardening the adhesive layer 12, the semiconductor wafer CP is strongly bonded by hardening the adhesive layer 12A, and the movement of the semiconductor wafer CP in the subsequent resin sealing step can be suppressed.
Examples of the degree of hardening of the adhesive layer include complete hardening or semi-hardening (B stage).
The method of hardening the adhesive layer 12 is preferably selected appropriately in accordance with the type of the adhesive contained in the adhesive layer 12. If the adhesive contained in the adhesive layer 12 is an ultraviolet curable adhesive, ultraviolet rays are irradiated to the adhesive layer 12 to harden the adhesive layer 12. Since the irradiated ultraviolet rays reach the adhesive layer 12 and the adhesive layer 12 is hardened, it is preferable that the substrate 11 of the adhesive laminate 1 has ultraviolet transmittance.
In this embodiment, since the reinforcing frame 2 is attached to the adhesive layer 12, it is possible to suppress the deflection and curling of the adhesive laminate 1 due to shrinkage when the adhesive layer 12 is hardened. Therefore, before the step of hardening the adhesive layer 12 to form a hardened adhesive layer 12A, it is preferable to attach the reinforcing frame 2 to the adhesive layer 12.

‧Sealing step
FIG. 1D is a schematic cross-sectional view illustrating a step of sealing a plurality of semiconductor wafers CP after the formation of the hardened adhesive layer 12A (the sealing step may be called).
In this embodiment, the circuit surface W1 side of the semiconductor wafer CP is covered with the sealing member 30 to form the sealing body 3. A sealing member 30 is also filled between the plurality of semiconductor wafers CP. In the present embodiment, since the reinforcing frame 2 is also placed inside the sealing body 3, the rigidity of the sealing body 3 is improved, and the bending of the semiconductor package generated after the resin sealing can be suppressed.
The method of sealing the plurality of semiconductor wafers CP using the sealing member 30 is not particularly limited.
For example, a method of placing a plurality of semiconductor wafers CP supported by the laminated body 1 in a mold, injecting a fluid sealing resin material into the mold, and heating and hardening the sealing resin material to form a sealing resin layer may be adopted. . Alternatively, a method of placing a sheet-shaped sealing resin on the circuit surface W1 of the plurality of semiconductor wafers CP, and heating and curing the sealing resin to form a sealing resin layer may be adopted. Alternatively, a method of placing a sheet-shaped sealing resin so as to cover the semiconductor wafer CP and the reinforcing frame 2 and heating and curing the sealing resin to form a sealing resin layer may be adopted. When a sheet-shaped sealing resin is used, it is preferable to seal the semiconductor wafer CP and the reinforcing frame 2 by a vacuum lamination method. By this vacuum lamination method, a gap can be prevented from being generated between the semiconductor wafer CP and the reinforcing frame 2. The temperature condition range of heat hardening by a vacuum lamination method is 80 degreeC or more and 120 degreeC or less, for example.
Examples of the material of the sealing member 30 include epoxy resin. The epoxy resin used as the sealing member 30 may include, for example, a phenol resin, an elastomer, an inorganic filler, a hardening accelerator, and the like.
Between the sealing step and the subsequent step, a step of hardening the sealing member 30 (in some cases, an additional hardening step) may be performed. This step is exemplified by a method of heating the sealing resin layer to promote curing. Alternatively, instead of performing an additional curing step, the sealing member 30 may be sufficiently cured by heating in the sealing step.

‧Substrate peeling step
FIG. 1E is a schematic cross-sectional view illustrating a step of peeling the substrate 11 adhering to the laminated body 1 after sealing a plurality of semiconductor wafers CP (the case may be referred to as a substrate peeling step).
In this embodiment, the hardened adhesive layer 12A is left on the sealing body 3, and the base material 11 is peeled from the sealing body 3.

‧Procedure for connecting terminal exposure
FIG. 2A is a schematic cross-sectional view illustrating a step of exposing the connection terminal W3 of the semiconductor wafer CP on the surface of the sealing body 3 (the connection terminal exposure step may be referred to).
In this embodiment, a part or the whole of the sealing resin layer of the sealing body 3 covering the circuit surface W1 of the semiconductor wafer CP and the connection terminal W3 is removed to expose the connection terminal W3. The method of exposing the connection terminal W3 of the semiconductor wafer CP is not particularly limited. Examples of the method for exposing the connection terminal W3 of the semiconductor wafer CP include a method of grinding the sealing resin layer to expose the connection terminal W3, and removing the sealing resin layer by a method such as laser irradiation to expose the connection terminal W3. And a method of removing the sealing resin layer by an etching method to expose the connection terminal W3. If it can be electrically connected to the redistribution layer described later, the entire connection terminal W3 can be exposed, and a part of the connection terminal W3 can also be exposed.

‧Re-wiring layer formation steps
FIG. 2B is a schematic cross-sectional view illustrating a step of forming a redistribution layer 4 electrically connected to the semiconductor wafer CP (there may be a step called a redistribution layer formation step).
In this embodiment, the redistribution layer 4 and the connection terminal W3 exposed on the surface of the sealing body 3 are electrically connected. In this embodiment, the redistribution layer 4 is formed on the circuit surface W1 and on the surface 3S of the sealing body 3. The method for forming the redistribution layer 4 may be a method generally known in the past.
The redistribution layer 4 includes an external electrode pad 41 for connecting external terminal electrodes. In this embodiment, the external electrode pads 41 are formed in a plurality of places. In this embodiment, an external electrode pad 41 is also formed that is fan-out outside the area of the semiconductor wafer CP.

‧External terminal electrode connection steps
FIG. 2C is a schematic cross-sectional view illustrating a step of electrically connecting the external terminal electrode 5 to the redistribution layer 4 (sometimes referred to as an external terminal electrode connection step).
In this embodiment, the external terminal electrode 5 is placed on the external electrode pad 41, and a solder ball or the like is placed thereon, and the external terminal electrode 5 and the external electrode pad 41 are electrically connected by soldering or the like. The material of the solder ball is not particularly limited, and examples thereof include lead-containing solder and lead-free solder.

‧Single chip step
FIG. 2D is a schematic cross-sectional view illustrating a step of singulating the sealing body 3 to which the external terminal electrode 5 is connected (the step may be referred to as a singulating step).
The method of singulating the sealing body 3 is not particularly limited. Examples of the singulation method include a singulation method using a cutting means such as a dicing saw, and a laser irradiation method. The step of singulating the sealing body 3 may be performed by attaching the sealing body 3 to an adhesive sheet such as a dicing sheet.
In the present embodiment, a semiconductor package 100 including a plurality of semiconductor wafers CP is manufactured by singulating the sealing body 3 into a plurality of semiconductor wafers CP. In the semiconductor package 100, a state in which the hardening adhesive layer 12A is adhered to the wafer back surface W2 of the semiconductor wafer CP is maintained. That is, the adhesive layer 12 of the adhesive laminate 1 is not used for temporary fixing to be peeled off after the resin is sealed, but is included as a part of the semiconductor package 100 as a hardened adhesive layer 12A firmly adhered to the semiconductor wafer CP.
In this embodiment, since the external terminal electrode 5 is connected to the external electrode pad 41 outside the area from the fan-out to the semiconductor wafer CP, the semiconductor package 100 can be used as a fan-out type wafer-level package ( FO-WLP).

‧installation steps
It is also preferable that the method for manufacturing a semiconductor device according to this embodiment includes a step of mounting the semiconductor package 100 on a printed circuit board or the like (the mounting step may be called).

‧ Effect of implementation form
According to the method for manufacturing a semiconductor device according to this embodiment, it is possible to suppress a defect that the semiconductor wafer CP is shifted from a predetermined position due to the pressure during resin sealing.
Compared with the method of temporarily fixing using an adhesive tape as in Document 1, in the manufacturing method of this embodiment, an adhesive laminate is used, and the adhesive layer 12 is hardened, and then the semiconductor wafer CP is resin-sealed. Therefore, with the adhesive laminate of this embodiment, the semiconductor wafer CP can be held more firmly in the hardened adhesive layer 12A than the adhesive tape of the previous method, and the deviation from the specified position can be suppressed. Migration (grain displacement).
In addition, compared with the method using an adhesive tape as in Document 1, the manufacturing method in this embodiment is because the adhesive layer 12 is hardened to form a hardened adhesive layer 12A, so even if it is not the method as in Document 1 The semiconductor wafer CP is fixed to the substrate, and the operability of the semiconductor wafer CP can be prevented from being lowered by hardening the rigidity of the adhesive layer 12A. Therefore, reducing the number of components and steps used in the method of manufacturing a semiconductor device can simplify the manufacturing steps.
In addition, since the hardened adhesive layer 12A has rigidity, the rigidity of the sealing body 3 is improved, and it is possible to suppress the semiconductor package from being bent after the resin is sealed.
The hardening adhesive layer 12A is included as a part of the semiconductor package 100. Therefore, when the hardening adhesive layer 12A is formed of a laser-printable material, identification information such as a manufacturing number can be printed on the semiconductor package 100. The hardened adhesive layer 12A.

[Second Embodiment]
The method for manufacturing a semiconductor device according to this embodiment includes a step of attaching a plurality of semiconductor elements to an adhesive layer of a laminate, a step of curing the adhesive layer to form a cured adhesive layer, and sealing the plurality of semiconductors. A step of forming a sealing body having a sealing resin layer from the device, a step of peeling the substrate from the sealing body without peeling the hardening adhesive layer from the sealing body, a step of forming a rewiring layer electrically connected to the semiconductor element, A step of electrically connecting the external terminal electrode to the redistribution layer; when attaching a plurality of the semiconductor elements to the adhesive layer, the circuit surface having the connection terminals with the semiconductor element is attached to the adhesive layer In addition, after peeling the base material from the sealing body, a part or the whole of the hardening adhesive layer covering the circuit surface is removed to expose the connection terminals, and the rewiring layer is electrically connected to the exposed connection terminals.
Prior to the step of curing the adhesive layer to form the cured adhesive layer, it is preferable to attach a reinforcing frame to the adhesive layer.

(Base material)
The base material of the adhesive laminate of this embodiment is not particularly limited, and for example, the same base material as the base material described in the first embodiment can be used.

(Adhesive layer)
It is preferable that the adhesive layer of the adhesive laminate of this embodiment also contains a hardening type adhesive which hardens by receiving energy from the outside. The adhesive layer system preferably contains at least one of an ultraviolet curing adhesive and a thermosetting adhesive. When the base material of the adhesive laminate has heat resistance, the generation of residual stress during thermal curing can be suppressed, so the adhesive layer is preferably a thermosetting adhesive layer containing a thermal curing adhesive.
The adhesive layer of this embodiment contains, for example, a second adhesive composition.
The adhesive layer is capable of imparting sheet shape maintenance and hardening properties by adding an adhesive component having a reactive double bond group. In addition, since the adhesive component system includes an epoxy group described below in addition to the reactive double bond group, the epoxy groups or the reactive double bond group are subjected to addition polymerization to form a three-dimensional mesh structure. The hardening of the adhesive layer is achieved. As a result, the adhesive layer system can improve the reliability of the semiconductor device compared to an adhesive layer composed of an adhesive component having no reactive double bond group. Furthermore, in the case where the adhesive layer is added to a filler (L) having a reactive double bond group described later on its surface, the adhesive component having a reactive double bond group is compared with an adhesive having no reactive double bond group. The component has high compatibility with the filler (L).
Examples of the adhesive component system having a reactive double bond group include a polymer component (J) and a thermosetting component (K). The reactive double bond system may include at least one of a polymer component (J) and a thermosetting component (K). The polymer component may be referred to as a binder polymer component.
The second adhesive composition preferably contains a polymer component (J) and a thermosetting component (K).
At the time when the adhesive layer is hardened, the initial adhesiveness for temporarily adhering to the function of the workpiece may be pressure-sensitive adhesiveness, or it may be a property that is softened and adhered by heat. The initial adhesiveness is usually controlled by the characteristics of the adhesive component and the adjustment of the amount of the filler (L) to be described later.

(J) Polymer composition
The polymer component (J) is added for the main purpose of imparting sheet shape retention to the adhesive layer.
In order to achieve the above object, the weight average molecular weight (Mw) of the polymer component (J) is usually 20,000 or more, and preferably 20,000 or more and 3,000,000 or less.
As the polymer component (J), acrylic polymers, polyesters, phenoxy resins, polycarbonates, polyethers, polyurethanes, polysiloxanes, and rubber-based polymers can be used. Select at least one from the group. In addition, two or more polymer components in combination may be used as the polymer component in such two or more combinations. For example, an acrylic polyol having an acrylic polymer having a hydroxyl group may be used at the molecular terminal. Acrylic urethane resin and the like obtained by reacting a urethane prepolymer having an isocyanate group. Furthermore, the polymer component (J) is a polymer containing two or more types of bonded polymers, and two or more of these may be used in combination.

(J1) acrylic polymer
As the polymer component (J), an acrylic polymer (J1) is preferably used. The glass transition temperature (Tg) of the acrylic polymer (J1) is preferably -60 ° C or higher and 50 ° C or lower, more preferably -50 ° C or higher and 40 ° C or lower, further preferably -40 ° C or higher and 30 ° C or lower. Range. If the glass transition temperature of the acrylic polymer (J1) is high, the adhesiveness of the adhesive layer is lowered, and there is a concern that it cannot be transferred to a workpiece.
The weight average molecular weight (Mw) of the acrylic polymer (J1) is preferably 100,000 or more and 1,500,000 or less. When the weight average molecular weight of the acrylic polymer (J1) is high, the adhesiveness of the adhesive layer is lowered, and there is a concern that it cannot be transferred to a workpiece.
The acrylic polymer (J1) is, as a monomer constituting the acrylic polymer (J1), at least a (meth) acrylate monomer or the derivative thereof. Examples of the (meth) acrylate monomer or the derivative include the acrylic polymer exemplified by the acrylic polymer (A1) described in Japanese Patent Application Laid-Open No. 2016-027655. As the monomer constituting the acrylic polymer (J1), a monomer having a carboxyl group can also be used. As the thermosetting component (K) described later, when an epoxy-based thermosetting component is used, it is because a carboxyl group reacts with an epoxy group in the epoxy-based thermosetting component. It is better to use less.
When the acrylic polymer (J1) has a reactive double bond group, the reactive double bond group is added to a unit of a continuous structure that becomes the skeleton of the acrylic polymer (J1), or is added to a terminal.
The acrylic polymer (J1) having a reactive double bond group is, for example, an acrylic polymer having a reactive functional group that reacts with the reactive functional group having one or more and five or less per molecule. It is obtained by reacting a substituent containing a polymerizable group with a substituent of a reactive double bond group.
As a reactive double bond system which an acrylic polymer (J1) has, a vinyl group, an allyl group, a (meth) acrylfluorenyl group, etc. are mentioned preferably.
The reactive functional group of the acrylic polymer (J1) is synonymous with the reactive functional group of the component (A) described in Japanese Patent Application Laid-Open No. 2016-027655. The acrylic polymer having a reactive functional group can be obtained by the method described in the component (A) of the publication. The polymerizable group-containing compound is the same as the energy ray-curable polymer exemplified by the component (AD) described in Japanese Patent Application Laid-Open No. 2016-027655.
When an adhesive layer contains the crosslinking agent (N) mentioned later, it is preferable that an acrylic polymer (J1) has a reactive functional group.
Among them, the acrylic polymer (J1) having a hydroxyl group as a reactive functional group is preferable because the production is easy, and it is easy to introduce a crosslinking structure using a crosslinking agent (N). The acrylic polymer (J1) having a hydroxyl group is excellent in compatibility with a thermosetting component (K) described later.
When a reactive functional group is introduced into the acrylic polymer (J1) as a monomer constituting the acrylic polymer (J1), a monomer having a reactive functional group is used as a monomer. The proportion of the total mass of the monomer of the acrylic polymer (J1) is preferably 1% by mass or more and 20% by mass or less, and more preferably 3% by mass or more and 15% by mass or less. The constitutional unit derived from the monomer having a reactive functional group in the acrylic polymer (J1) is set to the above range, and the reactive functional group and the crosslinkable functional group of the crosslinker (N) are reacted to form Three-dimensional mesh structure can increase the crosslinking density of acrylic polymer (J1). As a result, the adhesive layer system has excellent shear strength. In addition, since the water absorption of the adhesive layer is reduced, a semiconductor device having excellent package reliability can be obtained.

(J2) Non-acrylic resin
As the polymer component (J), a non-acrylic resin (J2) can be used. The non-acrylic resin (J2) is a resin selected from the group consisting of polyester, phenoxy resin, polycarbonate, polyether, polyurethane, polysiloxane, and rubber-based polymer, or From these groups, two or more kinds of resins are selected as the resins to be bonded. The non-acrylic resin (J2) may be used alone or in combination of two or more. The weight average molecular weight of the non-acrylic resin (J2) is preferably 20,000 or more and 100,000 or less, and more preferably 20,000 or more and 80,000 or less.
The glass transition temperature of the non-acrylic resin (J2) is preferably in the range of -30 ° C or higher and 150 ° C or lower, and more preferably in the range of -20 ° C or higher and 120 ° C or lower.
When the non-acrylic resin (J2) and the above-mentioned acrylic polymer (J1) are used in combination, when the adhesive layer is transferred to the workpiece, the adhesive layer can follow the transfer surface to suppress the generation of voids and the like.
When the non-acrylic resin (J2) is used in combination with the above-mentioned acrylic polymer (J1), the content of the non-acrylic resin (J2) is the mass of the non-acrylic resin (J2) and the acrylic polymer (J1) The ratio (J2: J1) is usually in the range of 1:99 to 60:40, preferably in the range of 1:99 to 30:70. When the content of the non-acrylic resin (J2) is within this range, the aforementioned effects can be obtained.
As the polymer component (J), when an acrylic polymer (J1) or a phenoxy resin having an epoxy group in a side chain is used, the epoxy group contained in the polymer component (J) is a component that participates in thermal curing. However, in this embodiment, such a polymer or resin is not a thermosetting component (K), but is operated as a polymer component (J).

(K) Thermosetting component
The thermosetting component (K) is added with the main purpose of imparting thermosetting property to the adhesive layer.
The thermosetting component (K) contains a compound having an epoxy group (hereinafter, it may be described as "epoxy compound" only). The thermosetting component (K) is preferably used in combination with an epoxy compound and a thermosetting agent.
Since the thermosetting component (K) is used in combination with the polymer component (J), the viscosity of the coating composition for forming an adhesive layer is suppressed, and from the viewpoint of improving workability, etc., generally, heat The weight average molecular weight (Mw) of the curable component (K) is 10,000 or less, and preferably 100 or more and 10,000 or less.
The epoxy compound includes an epoxy compound (K1) having a reactive double bond group and an epoxy compound (K1 ') having no reactive double bond group. The thermosetting agent includes a thermosetting agent (K2) having a reactive double bond group and a thermosetting agent (K2 ') having no reactive double bond group. When the thermosetting component (K) of this embodiment is a reactive double bond group, the epoxy compound (K1) having a reactive double bond group and the thermosetting agent (K2) having a reactive double bond group are used. At least one of them is included as an essential component.

(K1) An epoxy compound having a reactive double bond group
The epoxy compound (K1) having a reactive double bond group has an aromatic ring in order to improve the strength and heat resistance of the adhesive layer after thermal curing. Examples of the reactive double bond system possessed by the epoxy compound (K1) include vinyl, allyl, and (meth) acrylfluorenyl groups, more preferably (meth) acrylfluorenyl groups, and further Preferred is acrylfluorenyl.
The epoxy compound (K1) having such a reactive double bond group is, for example, a compound obtained by converting a part of the epoxy group of a polyfunctional epoxy compound into a group containing a reactive double bond group. Such a compound can be synthesized by, for example, adding an acrylic acid to an epoxy group. Alternatively, a compound containing a reactive double bond group is directly bonded to an aromatic ring or the like constituting the epoxy resin, and the like.
Here, examples of the epoxy compound (K1) having a reactive double bond group include a compound represented by the following formula (1), a compound represented by the following formula (2), or acrylic acid described later. A compound obtained by an addition reaction of an epoxy group in a part of an epoxy compound (K1 ′) having no reactive double bond group.

[In formula (1), R is H- or CH ₃ -, N is an integer of 0 or more and 10 or less. ]


In formula (2), R is H- or CH ₃ -, N is an integer of 0 or more and 10 or less. ]
The epoxy compound (K1) having a reactive double bond which can be obtained by reacting an epoxy compound (K1 ') having no reactive double bond group with acrylic acid is a compound that reacts with an unreacted substance or a ring. In the case where a mixture of compounds in which the oxygen group has been completely consumed is used, it is sufficient that the above compounds are substantially included in the present embodiment.

(K1 ') Epoxy compound without reactive double bond
As the epoxy compound (K1 ') having no reactive double bond group, a conventionally known epoxy compound can be used. Specific examples of such epoxy compounds include polyfunctional epoxy resins, bisphenol A diglycidyl ether, hydrogenated bisphenol A diglycidyl ether, o-cresol novolac-type epoxy resin, and Cyclopentadiene epoxy resin, biphenyl epoxy resin, bisphenol A epoxy resin, bisphenol F epoxy resin, phenylene skeleton epoxy resin and phenol novolac epoxy resin, etc. It has two or more functional epoxy compounds in the molecule. These epoxy compounds may be used alone or in combination of two or more.
The number average molecular weight of the epoxy compounds (K1) and (K1 ') is not particularly limited. The number average molecular weights of the epoxy compounds (K1) and (K1 ') are independent of each other, and from the viewpoint of the hardenability of the adhesive layer and the viewpoint of the strength and heat resistance of the cured adhesive layer, it is preferably 300. The above is more than 30,000, more preferably 400 or more and 10,000 or less, and even more preferably 500 or more and 10,000 or less. The content of the reactive double bond group in the total amount of the epoxy compounds (K1) and (K1 ') [(K1) + (K1')] is relative to the total amount of the epoxy compounds (K1) and (K1 '). The epoxy group with 100 mol is 0.1 mol or more and 1000 mol or less, preferably 1 mol or more and 500 mol or less, and more preferably 10 mol or more and 400 mol or less. If the content of the reactive double bond group in the total amount of the epoxy compounds (K1) and (K1 ') exceeds 1,000 mol, there is a possibility that the thermosetting property becomes insufficient. In this specification, the number average molecular weight can be determined as a standard polystyrene conversion value obtained by gel · permeation · chromatography (GPC) using tetrahydrofuran (THF) as a solvent.
The thermosetting agent functions as a curing agent for the epoxy compounds (K1) and (K1 ').

(K2) Thermosetting agent with reactive double bond group
The thermosetting agent (K2) having a reactive double bond group is a thermosetting agent having a polymerizable carbon-carbon double bond group. As a reactive double bond system which the thermosetting agent (K2) has, a vinyl group, an allyl group, a (meth) acrylfluorenyl group, etc. are mentioned preferably, A methacrylfluorenyl group is more preferable.
The thermosetting agent (K2) contains a functional group capable of reacting with an epoxy group in addition to the above-mentioned reactive double bond group. Examples of the functional group capable of reacting with an epoxy group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amine group, a carboxyl group, and an acid anhydride group. Among these, a phenolic hydroxyl group and an alcoholic group are particularly preferred. A hydroxyl group and an amine group, and further preferably a phenolic hydroxyl group.
Examples of the thermosetting agent (K2) having a reactive double bond group include a compound in which a part of a hydroxyl group of a phenol resin is substituted with a group containing a reactive double bond group, or a reactive double bond A compound in which a radical is directly bonded to an aromatic ring of a phenol resin, and the like. Here, examples of the phenol resin include a novolac phenol resin, a dicyclopentadiene phenol resin, and a polyfunctional phenol resin, and the novolac phenol resin is particularly preferred. Therefore, examples of the thermosetting agent (K2) having a reactive double bond group include compounds in which a part of a hydroxyl group of a novolac phenol resin is substituted with a group containing a reactive double bond group, or a reaction including a reaction Compounds in which a radical double bond group is directly bonded to an aromatic ring of a novolac phenol resin are preferred.
A particularly preferable example of the thermosetting agent (K2) having a reactive double bond group is a structure in which a reactive double bond group is introduced into a part of a repeating unit containing a phenolic hydroxyl group as shown in the following formula (a), A compound containing a repeating unit having a group containing a reactive double bond group as in the following formula (b) or (c). A particularly preferred thermosetting agent (K2) having a reactive double bond group includes a repeating unit of the following formula (a) and a repeating unit of the following formula (b) or (c).

(In formula (a), n is 0 or 1.)

(In formulae (b) and (c), n is independently 0 or 1.
In formula (b) and formula (c), R ¹ X is a hydrocarbon group having 1 to 5 carbon atoms independently of each other, and X is each independently, and there are -O- and -NR ² -(R ² Is hydrogen or methyl), and R ¹ When X is a single bond, A is a (meth) acrylfluorenyl group. )
The phenolic hydroxyl group-containing functional group capable of reacting with an epoxy group contained in the repeating unit (a) has a function as a hardener that reacts and hardens with an epoxy group of an epoxy compound during thermal curing of the adhesive layer. The reactive double bond group contained in the repeating units (b) and (c) improves the compatibility between the acrylic polymer (J1) and the thermosetting component (K), and at the same time, the reactive double bond groups are added to each other Polymerize to form a three-dimensional mesh structure in the adhesive layer. As a result, the hardened material of the adhesive layer (the cured adhesive layer (protective film)) has a strong and tough property, and thus the reliability of the semiconductor device is improved. In addition, the reactive double bond group system included in the repeating units (b) and (c) also functions to polymerize and harden the adhesive layer when energy-curing the adhesive layer, thereby reducing the adhesive force between the adhesive layer and the substrate.
The proportion of the repeating unit represented by the formula (a) of the heat curing agent (K2) is preferably 5 mol% or more and 95 mol% or less, more preferably 20 mol% or more and 90 mol. % Or less, more preferably 40 mol% or more and 80 mol% or less, and based on the proportion of the repeating unit represented by the formula (b) or (c) above, it is preferably 5 mol% or more and 95 mol. The ears are less than 10%, more preferably 10% or more and 80% or less, more preferably 20% or more and 60% or less.

(K2 ') Thermosetting agent without reactive double bond group
Examples of the thermosetting agent (K2 ′) having no reactive double bond group include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amine group, a carboxyl group, and an acid anhydride group. Among these, a phenolic hydroxyl group, an amino group, an acid anhydride group, etc. are mentioned preferably, and a phenolic hydroxyl group and an amine group are more preferably mentioned.
Specific examples of the thermosetting agent (amine-based thermosetting agent) having an amine group include DICY (dicyanodiamine).
Specific examples of the thermosetting agent (phenol-based thermosetting agent) having a phenolic hydroxyl group include polyfunctional phenol resins, biphenols, novolac-type phenol resins, dicyclopentadiene-based phenol resins, and arane. Based phenol resin.
The thermosetting agent (K2 ') which does not have a reactive double bond group can be used individually by 1 type or in mixture of 2 or more types.
The number average molecular weight of the above-mentioned thermosetting agents (K2) and (K2 ') is preferably 40 or more and 30,000 or less, more preferably 60 or more and 10,000 or less, and even more preferably 80 or more and 10,000 or less.
The content of the total [(K2) and (K2 ')] of the thermosetting agents (K2) and (K2') in the adhesive layer is relative to the total of the epoxy compounds (K1) and (K1 ') [(K1) And (K1 ')] of 100 parts by mass, more preferably 0.1 parts by mass or more and 500 parts by mass or less, and more preferably 1 part by mass or more and 200 parts by mass or less. If the content of the thermosetting agent is small, there is a concern that the hardening is insufficient and the adhesiveness cannot be obtained. The content of the thermosetting agents [(K2) and (K2 ')] is preferably 1 part by mass or more and 50 parts by mass or less with respect to 100 parts by mass of the polymer component (J), 2 parts by mass or more, It is more preferably 40 parts by mass or less. If the content of the thermosetting agent is small, there is a concern that the hardening is insufficient and the adhesiveness cannot be obtained.
The thermosetting component (K) (the total of the epoxy compound and the thermosetting agent [(K1) + (K1 ') + (K2) + (K2')]) is in the entire mass of the adhesive layer, and is preferably It is contained in a proportion of less than 50% by mass, more preferably 1% by mass or more and 30% by mass or less, further preferably 5% by mass or more and 25% by mass or less. In addition, in the adhesive layer system, the thermosetting component (K) is preferably contained in an amount of 1 part by mass or more and less than 105 parts by mass, and more preferably 1 part by mass based on 100 parts by mass of the polymer component (J). It is preferably contained in an amount of 3 parts by mass or more and 60 parts by mass or less, and more preferably 3 parts by mass or more and 40 parts by mass or less. In particular, when the content of the thermosetting component (K) has been reduced, for example, it is set to a range of 3 parts by mass or more and 40 parts by mass or less with respect to 100 parts by mass of the polymer component (J). In the case of the degree of inclusion, the following effects can be obtained. The semiconductor wafer is fixed to the adhesive layer, and even if the adhesive layer is exposed to a high temperature before the adhesive layer is thermally hardened, the possibility of void generation in the adhesive layer can be reduced in the thermal curing step. When there is too much content of a thermosetting component (K), there exists a possibility that sufficient adhesiveness cannot be obtained.

(K3) Hardening accelerator
The hardening accelerator (K3) can also be used for adjusting the hardening speed of the adhesive layer. The hardening accelerator (K3) is particularly preferably used when an epoxy-based thermosetting component is used as the thermosetting component (K).
A preferable hardening accelerator is at least one selected from the group consisting of tertiary amines, imidazoles, organic phosphines, and tetraphenylboron salts. Examples of the tertiary amines include triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and ginsyl (dimethylaminomethyl) phenol. Examples of the imidazoles include 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dimethylol imidazole, and 2-phenyl 4-methyl-5-hydroxymethylimidazole and the like. Examples of the organic phosphine-based system include tributylphosphine, diphenylphosphine, and triphenylphosphine. Examples of the tetraphenylboronate system include tetraphenylphosphonium tetraphenylborate and triphenylphosphinetetraphenylborate. A hardening accelerator can be used individually by 1 type or in mixture of 2 or more types.
When using a hardening accelerator (K3), the hardening accelerator (K3) is a total of ((K1) + (K1 ') + (K2) + (K2')) with respect to the total of the thermosetting component (K). In terms of parts, it is preferably contained in an amount of 0.01 parts by mass or more and 10 parts by mass or less, and more preferably in an amount of 0.1 parts by mass or more and 2.5 parts by mass or less. When the hardening accelerator (K3) is contained in an amount within the above range, the adhesive layer has excellent adhesive properties even when exposed to high temperature and high humidity conditions. When the hardening accelerator (K3) is contained in an amount within the above range, when the adhesive layer is used to form a hardened adhesive layer (protective film) for protecting the back surface of a face down semiconductor wafer, The backside protection function of the wafer is excellent. If the content of the hardening accelerator (K3) is small, there is a possibility that the hardening is insufficient and sufficient adhesion characteristics cannot be obtained.
The adhesive layer system may contain the following components in addition to the adhesive component having a reactive double bond group.

(L) Filling material
The adhesive layer system may contain a filler (L). By blending the filler (L) with the adhesive layer, the thermal expansion coefficient of the cured adhesive layer (protective film) obtained by curing the adhesive layer can be adjusted to optimize the cured adhesive layer (protective film) for the workpiece. The thermal expansion coefficient of) can improve the reliability of semiconductor devices. Moreover, it is also possible to reduce the hygroscopicity of a hardening adhesive layer (protective film).
In addition, when the hardened adhesive layer (protective film) obtained by hardening the adhesive layer of this embodiment functions as a protective film for a workpiece or a wafer having a sheet-shaped workpiece, the protective film is applied. When the laser mark is applied, the filler material (L) is exposed at the portion that has been scraped by the laser light, and the reflected light diffuses, so that the color is close to white. Therefore, if the adhesive layer contains a coloring agent (I) described later, the contrast between the laser marking portion and other portions is poor, and the effect of printing becomes clear.
Preferred filling materials (L) include powders of silicon dioxide, aluminum oxide, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide, and boron nitride. These powders are spherical beads. , Single crystal fiber and glass fiber. Among these fillers, a silica filler and an alumina filler are preferred. The filler (L) can be used alone or in combination of two or more.
In order to obtain the above-mentioned effect more surely, the range of the content of the filler (L) is in the entire mass of the adhesive layer, preferably 1% by mass or more, 80% by mass or less, more preferably 20% by mass or more, 75% by mass or less. In the case of using the adhesive layer to form a protective film for protecting the back surface of a face-down semiconductor wafer, the content of the filler (L) is considered from the viewpoint of improving the protection function of the back surface of the wafer. The total mass of the adhesive layer is particularly preferably 40% by mass or more and 70% by mass or less.
In the filler (L) of the present embodiment, the surface is preferably modified with a compound having a reactive double bond group. Hereinafter, the filler which modifies the surface with a compound having a reactive double bond group will be described as “a filler having a reactive double bond group on the surface”.
The reactive double bond-based vinyl, allyl, or (meth) acrylfluorenyl group possessed by the filler (L) is preferred.
Examples of the untreated filler used as a filler having a reactive double bond group on its surface include calcium silicate, magnesium hydroxide, aluminum hydroxide, titanium oxide, talc, and mica in addition to the filler (L) described above. And clay. Among these filling materials, silicon dioxide is preferred. The silanol group of silicon dioxide effectively acts as a bond with a silane coupling agent described later.
A filler having a reactive double bond group on its surface is obtained by, for example, surface-treating the surface of an untreated filler with a coupling agent having a reactive double bond group.
The coupling agent system having the above-mentioned reactive double bond group is not particularly limited. As the coupling agent, for example, a coupling agent having a vinyl group, a coupling agent having a styrene group, and a coupling agent having a (meth) acrylic fluorenyloxy group are suitably used. The coupling agent is preferably a silane coupling agent.
Specific examples of the coupling agent include vinyltrimethoxysilane, vinyltriethoxysilane, p-styryltrimethoxysilane, and 3-methacryloxypropyldimethoxy. Silane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-methacryloxypropylmethyldiethoxysilane And 3-propenyloxypropyltrimethoxysilane. Examples of such commercially available products include KBM-1003, KBE-1003, KBM-1403, KBM-502, KBM-503, KBE-502, KBE-503, and KBM-5103 (these are all Shin-Etsu Chemical Industries Company).
The method of surface-treating the said filler with the said coupling agent is not specifically limited. As this method, for example, an untreated filler is added to a high-speed stirring mixer such as a Henschel mixer or a V-type mixer, and the coupling agent is directly or dissolved and dispersed in an alcohol while stirring. A dry method of adding an aqueous solution, an organic solvent, or an aqueous solution. Further, other methods include a slurry method in which a coupling agent is added to a slurry of an untreated filler material, a direct treatment method such as a spray method in which a coupling agent is sprayed after the untreated filler material is dried, or In the preparation of the above composition, an integral blending method in which an untreated filler and an acrylic polymer are mixed, and a coupling agent is directly added during the mixing.
A preferable lower limit of the amount of the surface-treated coupling agent of 100 parts by mass of the untreated filler is 0.1 part by mass, and a preferable upper limit is 15 parts by mass. If the amount of the coupling agent is less than 0.1 parts by mass, there is a possibility that the untreated filler material with the above-mentioned coupling agent is not sufficiently surface-treated and exhibits no effect.
In addition, the filler material having a reactive double bond group on the surface has excellent affinity with a binder component having a reactive double bond group, and can be uniformly dispersed in the adhesive layer.
The filler material having a reactive double bond group on the surface is included in the entire mass of the adhesive layer, and is preferably contained in a proportion of less than 50% by mass, and more preferably contained in a proportion of 1% by mass or more and 30% by mass or less. Furthermore, it is more preferable to include it in the ratio of 5 mass% or more and 25 mass% or less. The filler is preferably contained in a range of 5 parts by mass or more and less than 100 parts by mass, and more preferably 8 parts by mass, with respect to 100 parts by mass of the binder component. It is included in the range of 60 mass parts or more, and more preferably in the range of 10 mass parts or more and 40 mass parts or less. If the amount of the filler having a reactive double bond group on the surface is too large, there is a concern that the adhesion to the workpiece or the adhesion to the substrate may be deteriorated. If the amount of the filler having a reactive double bond group on the surface is too small, there is a concern that the effect of the filler addition is not sufficiently exhibited.
The average particle diameter of the filler (L) is preferably in a range of 0.01 μm or more and 10 μm or less, and more preferably in a range of 0.01 μm or more and 0.2 μm or less. When the average particle diameter of the filler is within the above range, adhesion can be exhibited without impairing the adhesion to the workpiece. If the average particle diameter is too large, there is a possibility that the surface state of the flakes is deteriorated and the in-plane thickness of the adhesive layer is scattered.
In addition, the said "average particle diameter" is calculated | required by the particle size distribution meter (made by Nikkiso Co., Ltd .; device name; Nanotrac150) using the dynamic light scattering method.
By setting the average particle diameter of the filler to the above range, the effect of significantly improving the reliability of the package is presumed to be due to the following reasons.
When the average particle diameter of the filler is large, the structure formed by components other than the fillers buried between the fillers also becomes large. The components other than the filler are less cohesive than the filler. If the structure formed by a component other than the filler is large, there is a concern that the fracture may extend to a wide range when fracture occurs in a component other than the filler. On the other hand, if the filler is fine, the structure formed by components other than the filler is also fine. In that case, even if the fracture is caused by a component other than the filler, the filler having been collected in the fine structure prevents the fracture from progressing. As a result, there is a tendency that the fracture does not increase to a wide range. Furthermore, a reactive double bond group such as a methacryloxy group and the like included in the filler of the present embodiment forms a bond with a reactive double bond group included in a component other than the filler (for example, an adhesive component). If the filler is fine, the contact area between the filler and components other than the filler will increase. As a result, the bonding between the filler and the binder component tends to increase.

(I) Colorant
The colorant (I) can be blended in the adhesive layer. When the coloring agent is mixed and the semiconductor device is installed in the machine, the failure of the semiconductor device caused by infrared rays generated from the surrounding devices can be prevented. In addition, in the case where marking is performed on the hardening adhesive layer (protective film) by means of a laser mark or the like, a mark such as a character or a mark makes it easy to recognize. That is, the semiconductor device or semiconductor wafer on which the hardening adhesive layer (protective film) has been formed is attached to the surface of the hardening adhesive layer (protective film), and the type and the like are usually scraped by a laser marking method (by laser light) Method of protecting the surface of the film and printing)). The hardened adhesive layer (protective film) contains the coloring agent (I), and the contrast between the part of the hardened adhesive layer (protective film) that has been scraped by laser light and the unscratched part can be fully obtained, improving visual recognition. Sex.
As the colorant system, organic pigments, inorganic pigments, organic dyes, and inorganic dyes can be used. From the viewpoint of electromagnetic wave and infrared shielding properties as the colorant, black pigments are preferred. Examples of the black pigment system include carbon black, manganese dioxide, nigrosine, activated carbon, and the like, but are not limited thereto. From the viewpoint of improving the reliability of semiconductor devices, carbon black is particularly preferable. The colorant (I) may be used alone or in combination of two or more.
The blending amount of the colorant (I) is in the entire mass of the adhesive layer, preferably 0.1 mass% or more and 35 mass% or less, more preferably 0.5 mass% or more and 25 mass% or less, and further preferably 1 mass%. Above 15% by mass.

(M) Coupling agent
The coupling agent (M) having a functional group that reacts with an inorganic substance and a functional group that reacts with an organic functional group may be used in order to improve the adhesion and adhesion of the adhesive layer to the workpiece, and to improve the adhesion of the adhesive layer. Improve cohesion and use. In addition, by using the coupling agent (M), the water resistance can be improved without impairing the heat resistance of the hardened adhesive layer (protective film). Examples of such coupling agents include titanate-based coupling agents, aluminate-based coupling agents, and silane coupling agents. Among these coupling agents, a silane coupling agent is particularly preferred.
The silane coupling agent is a group that reacts with a functional group having a polymer component (J), a thermosetting component (K), and the like, and preferably has a functional group that reacts with an organic functional group.
Examples of such a silane coupling agent system include a low-molecular-weight silane coupling agent having two or three alkoxy groups, bis (3-triethoxysilylpropyl) tetrasulfane, and vinyltriethoxy. Silane and imidazole silane. Examples of the low-molecular-weight silane coupling agent system having two or three alkoxy groups include γ-glycidyloxypropyltrimethoxysilane, γ-glycidyloxypropyltriethoxysilane, and γ-glycidyl. Glyceryloxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ- (methacryloxypropyl) trimethoxysilane, γ -Aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropylmethyl Didiethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropyl Methyldimethoxysilane, methyltrimethoxysilane, methyltriethoxysilane and vinyltrimethoxysilane. Examples of the silane coupling agent include hydrolysis of the above-mentioned low-molecular-weight silane coupling agent having 2 or 3 alkoxy groups, and low-molecular-weight silane coupling agent having 4 alkoxy groups, etc., by hydrolysis of the alkoxy group. And an oligomeric silane coupling agent of a product condensed by dehydration condensation. In particular, among the above-mentioned low-molecular-weight silane coupling agents, a low-molecular-weight silane coupling agent having 2 or 3 alkoxy groups and a low-molecular-weight silane coupling agent having 4 alkoxy groups are condensed by dehydration condensation. The oligomer of the product is rich in alkoxy group reactivity, and is preferable because it has a sufficient number of organic functional groups. Examples of such an oligomer include an oligomer of a copolymer of 3- (2,3-glycidoxy) propylmethoxysiloxane and dimethoxysiloxane.
These silane coupling agents can be used alone or in combination of two or more.
The silane coupling agent is usually 0.1 parts by mass or more and 20 parts by mass or less, preferably 0.2 parts by mass or more and 10 parts by mass or less, more preferably 0.3 parts by mass or more, based on 100 parts by mass of the adhesive component. Included in proportions by mass or less. If the content of the silane coupling agent is less than 0.1 parts by mass, the above-mentioned effects may not be obtained, and if it exceeds 20 parts by mass, there may be a cause of outgassing.

(N) Crosslinking agent
In order to adjust the initial adhesive force and cohesive force of the adhesive layer, a crosslinking agent (N) may be added to the adhesive layer. In the case of formulating a crosslinking agent, the acrylic polymer (J1) contains a reactive functional group.
Examples of the crosslinking agent (N) include organic polyisocyanate compounds and organic polyimide compounds. Examples of the cross-linking agent (N) include the same cross-linking agents as those exemplified as the cross-linking agent (B) described in Japanese Patent Application Laid-Open No. 2016-027655.
When an isocyanate-based crosslinking agent is used, it is preferable to use an acrylic polymer (J1) having a hydroxyl group as a reactive functional group. When the cross-linking agent has an isocyanate group and the acrylic polymer (J1) has a hydroxyl group, a reaction between the cross-linking agent and the acrylic polymer (J1) occurs, and a cross-linking structure can be easily introduced into the adhesive layer.
When a cross-linking agent (N) is used, the cross-linking agent (N) is generally 0.01 mass part or more and 20 mass parts or less, preferably 0.1 mass based on 100 mass parts of the acrylic polymer (J1). It is used at a ratio of not less than 10 parts by mass and more preferably not less than 0.5 part by mass and not more than 5 parts by mass.

(P) Photopolymerization initiator
A photopolymerization initiator (P) may be blended in the adhesive layer system. Specific examples of the photopolymerization initiator (P) include those similar to the photopolymerization initiator (E) described in Japanese Patent Application Laid-Open No. 2016-027655.
In the case of using a photopolymerization initiator (P), the mixing ratio is suitably based on the total amount of the reactive double bond group on the surface of the aforementioned filler (L) and the reactive double bond group having a binder component, and is suitably Just set it. The proportion of the photopolymerization initiator (P) is not limited. The proportion of the photopolymerization initiator (P) is, for example, 100 parts by mass with respect to a total of 100 parts by mass of the polymer component having a reactive double bond group, the thermosetting component having a reactive double bond group, and the filler. The photopolymerization initiator (P) is usually 0.1 parts by mass or more and 10 parts by mass or less, preferably 1 part by mass or more and 5 parts by mass or less. If the content of the photopolymerization initiator (P) is lower than the above range, there is a concern that the reaction cannot be satisfied due to insufficient photopolymerization. If the content is higher than the above range, a residue that does not contribute to photopolymerization is generated. The hardenability of the agent layer becomes an insufficient doubt.

(M) Universal additive
In addition to the above-mentioned adhesive layer system, various additives can be blended as necessary. Examples of the various additive systems include the general-purpose additive (I) and the release agent described in the first embodiment.
The adhesive layer is obtained, for example, by using a composition (a second adhesive composition) which can be obtained by mixing the above-mentioned respective components in an appropriate ratio. The second adhesive composition is first diluted with a solvent in advance, or may be added to the solvent during mixing. When the second adhesive composition is used, it may be diluted with a solvent.
Examples of such a solvent system include ethyl acetate, methyl acetate, diethyl ether, dimethyl ether, acetone, methyl ethyl ketone, acetonitrile, hexane, cyclohexane, toluene, and heptane.
The thickness of the adhesive layer is preferably 1 μm or more and 100 μm or less, more preferably 2 μm or more and 90 μm or less, and further preferably 3 μm or more and 80 μm or less. The thickness of the adhesive layer is set to the above range, and the adhesive layer functions as a highly reliable adhesive or protective film.

(Manufacturing method of semiconductor device)
FIGS. 3 (FIGS. 3A to 3D) and 4 (FIGS. 4A to 4D) are diagrams showing an example of a method for manufacturing a semiconductor device according to this embodiment.
In the method for manufacturing a semiconductor device according to this embodiment, an adhesive laminate 1 including a substrate 11 and an adhesive layer 12 is used.
It is preferable that the adhesive layer 12 contains a hardening type adhesive which is hardened by receiving external energy. Examples of the externally supplied energy system include ultraviolet rays, electron beams, and heat. It is preferable that the adhesive layer 12 contains at least any one of an ultraviolet curing adhesive and a thermosetting adhesive. In this embodiment, the adhesive system contained in the adhesive layer 12 is preferably the second adhesive composition described above, for example.

‧Semiconductor wafer attaching steps
FIG. 3A is a schematic cross-sectional view illustrating a step (semiconductor wafer attaching step) of attaching the semiconductor wafer CP to the adhesive layer 12 of the adhesive layer 1. In this embodiment, as shown in FIG. 3A, a plurality of semiconductor wafers CP are attached to the adhesive layer 12. When the semiconductor wafers CP are attached, they can be attached individually, or a plurality of semiconductor wafers CP can be attached at the same time.
The semiconductor wafer CP used in this embodiment has a circuit surface W1 on which a connection terminal W3 is provided, and a wafer back surface W2 which is a back surface of an element on the opposite side to the circuit surface W1. In this embodiment, the circuit surface W1 is attached to the adhesive layer 12.

‧Reinforcement frame attaching steps
This embodiment is also the same as the first embodiment, and it is preferable to further include a step (reinforcing frame attaching step) of attaching the reinforcing frame 2 to the laminated body 1 (refer to FIG. 3A). The shape of the reinforcing frame 2 is not particularly limited, and an example of the reinforcing frame 2 is the same as that of the first embodiment.
This embodiment is also the same as the first embodiment, and the step of attaching the reinforcing frame 2 may be performed before or after the step of attaching the semiconductor wafer CP to the laminated body 1.

‧Adhesive layer hardening step
FIG. 3B is a schematic cross-sectional view illustrating a step of curing the adhesive layer 12 to form a cured adhesive layer 12A (adhesive layer curing step). By hardening the adhesive layer 12, the semiconductor wafer CP is strongly bonded by hardening the adhesive layer 12A, and the movement of the semiconductor wafer CP in the subsequent resin sealing step can be suppressed.
The method of hardening the adhesive layer 12 is the same as that of the first embodiment, and it is preferable to appropriately select it according to the type of the adhesive contained in the adhesive layer 12.
In this embodiment, since the reinforcing frame 2 is attached to the adhesive layer 12, it is possible to suppress the deflection and curling of the adhesive laminate 1 due to the shrinkage of the adhesive layer 12 when it is cured. Therefore, before the step of hardening the adhesive layer 12 to form a hardened adhesive layer 12A, it is preferable to attach the reinforcing frame 2 to the adhesive layer 12.

‧Sealing step
FIG. 3C is a schematic cross-sectional view illustrating a step (sealing step) of sealing a plurality of semiconductor wafers CP after the formation of the hardened adhesive layer 12A.
In this embodiment, the sealing body 3A is formed by covering the wafer back surface W2 side of the semiconductor wafer CP with a sealing member 30. A sealing member 30 is also filled between the plurality of semiconductor wafers CP. In this embodiment, since the reinforcing frame 2 is also taken into the inside of the sealing body 3A, the rigidity of the sealing body 3A is improved, and the warping of the semiconductor package generated after the resin sealing can be suppressed.
The method of sealing the plurality of semiconductor wafers CP using the sealing member 30 is not particularly limited, and examples thereof include the method described in the first embodiment.
Examples of the material of the sealing member 30 include the materials and compositions described in the first embodiment.
In this embodiment, an additional hardening step described in the first embodiment may be performed.

‧Substrate peeling step
The 3D diagram is a schematic cross-sectional view illustrating a step (substrate peeling step) of peeling the substrate 11 adhering to the laminate 1 after sealing a plurality of semiconductor wafers CP.
In this embodiment, the hardened adhesive layer 12A is left in the sealed body 3A, and the base material 11 is peeled from the sealed body 3A.

‧Procedure for connecting terminal exposure
FIG. 4A is a schematic cross-sectional view illustrating a step of exposing the connection terminal W3 of the semiconductor wafer CP on the surface of the sealing body 3A (the connection terminal exposing step).
In this embodiment, a part or the whole of the hardened adhesive layer 12A of the sealing body 3A covering the circuit surface W1 of the semiconductor wafer CP or the connection terminal W3 is removed to expose the connection terminal W3. The method of exposing the connection terminal W3 of the semiconductor wafer CP is not particularly limited. Examples of a method of exposing the connection terminal W3 of the semiconductor wafer CP include a method of removing the hardening adhesive layer 12A by laser irradiation and the like to expose the connection terminal W3, and removing hardening by an etching method. Method for exposing the connection layer W3 to the agent layer 12A and the like. In this embodiment, if it can be electrically connected to a redistribution layer described later, the entire connection terminal W3 can be exposed, and a part of the connection terminal W3 can also be exposed.

‧Re-wiring layer formation steps
FIG. 4B is a schematic cross-sectional view illustrating a step (rewiring layer forming step) of forming a rewiring layer 4 electrically connected to the semiconductor wafer CP.
In this embodiment, the redistribution layer 4 and the connection terminal W3 exposed on the surface of the sealing body 3A are electrically connected. In this embodiment, the redistribution layer 4 is formed on the circuit surface W1 and on the surface 3S of the sealing body 3A. The method for forming the redistribution layer 4 may be a method generally known in the past.
The redistribution layer 4 includes an external electrode pad 41 for connecting external terminal electrodes. In this embodiment, the external electrode pads 41 are formed in a plurality of places. In this embodiment, an external electrode pad 41 is also formed that is fan-out outside the area of the semiconductor wafer CP.

‧External terminal electrode connection steps
FIG. 4C is a schematic cross-sectional view illustrating a step (external terminal electrode connection step) of electrically connecting the external terminal electrode 5 to the redistribution layer 4.
In this embodiment, the external terminal electrode 5 is placed on the external electrode pad 41, and a solder ball or the like is placed thereon, and the external terminal electrode 5 and the external electrode pad 41 are electrically connected by soldering or the like. The material of the solder ball is not particularly limited, and examples thereof include lead-containing solder and lead-free solder.

‧Single chip step
FIG. 4D is a schematic cross-sectional view illustrating a step of singulating the sealing body 3A to which the external terminal electrode 5 is connected (singulating step).
The method of singulating the sealing body 3A is not particularly limited, and examples thereof include the same method as in the first embodiment. The step of singulating the sealing body 3A may be performed by attaching the sealing body 3A to an adhesive sheet such as a dicing sheet.
In this embodiment, a semiconductor package 100A including a plurality of semiconductor wafers CP is manufactured by singulating the sealing body 3A into a plurality of semiconductor wafers CP. The semiconductor package 100A-based hardening adhesive layer 12A is provided on the circuit surface W1 of the semiconductor wafer CP. That is, the adhesive layer 12 of the adhesive laminate 1 is not used for temporary fixing to be peeled off after the resin is sealed, but is included as a part of the semiconductor package 100A as a hardened adhesive layer 12A firmly adhered to the semiconductor wafer CP.
In this embodiment, since the external terminal electrode 5 is connected to the external electrode pad 41 outside the area from the fan-out to the semiconductor wafer CP, the semiconductor package 100A can be used as a fan-out type wafer-level package ( FO-WLP).

‧installation steps
It is also preferable that the method for manufacturing a semiconductor device according to this embodiment includes a step of mounting the semiconductor package 100A on a printed circuit board (there may be a mounting step).

‧ Effect of implementation form
The method for manufacturing a semiconductor device according to this embodiment is the same as that of the first embodiment. Compared with the method using an adhesive tape as described in Document 1, the semiconductor chip CP can be suppressed from being pressed by the pressure during resin sealing. The specified position deviation can simplify the manufacturing steps.
In addition, since the hardened adhesive layer 12A has rigidity, the rigidity of the sealing body 3A is improved, and it is possible to suppress the semiconductor package from being bent after the resin is sealed.

[Third Embodiment]
The manufacturing method of the semiconductor device of this embodiment is a manufacturing method using an adhesive laminate which includes a substrate and an adhesive layer, and further includes an adhesive layer between the adhesive layer and the substrate. The method for manufacturing a semiconductor device according to this embodiment includes a step of attaching a plurality of the semiconductor elements to the above-mentioned adhesive layer of the laminate, a step of curing the adhesive layer to form a cured adhesive layer, A step of sealing a plurality of the semiconductor elements to form a sealing body having a sealing resin layer; a step of peeling the base material from the sealing body without peeling the hardening adhesive layer from the sealing body; A step of a wiring layer, and a step of electrically connecting an external terminal electrode to the redistribution layer.
The step of peeling the substrate from the sealing body is not a step of peeling the hardening adhesive layer from the sealing body, but a step of peeling at an interface between the adhesive layer and the hardening adhesive layer.

(Laminated)
In the method for manufacturing a semiconductor device according to this embodiment, an adhesive laminate 1A (see FIG. 5A) including a substrate 11, an adhesive layer 12, and an adhesive layer 13 is used.

(Base material)
The substrate 11 is not particularly limited, and for example, the same substrate as that described in the first embodiment can be used.

(Adhesive layer)
It is preferable that the adhesive layer 12 contains a hardening type adhesive which is hardened by receiving external energy. Examples of the externally supplied energy system include ultraviolet rays, electron beams, and heat. It is preferable that the adhesive layer 12 contains at least any one of an ultraviolet curing adhesive and a thermosetting adhesive. In this embodiment, the adhesive agent contained in the adhesive agent layer 12 is, for example, at least one of the adhesive agent composition of the aforementioned first adhesive agent composition and the aforementioned second adhesive agent composition.

(Adhesive layer)
The adhesive layer 13 is included between the substrate 11 and the adhesive layer 12. In the adhesive laminate 1A, the adhesive layer 12 is laminated on the adhesive layer 13 provided on the substrate 11.
The adhesive layer 13 may be formed of a weakly adhesive adhesive having a degree of adhesive force capable of peeling off the adhesive layer 12, and may also be formed of an energy ray-hardenable adhesive having reduced adhesive force by irradiation with energy rays. When an adhesive layer made of an energy-ray-curable adhesive is used, the region where the adhesive layer 12 is laminated (for example, the inner peripheral portion of the substrate 11) is irradiated with energy rays in advance to make the adhesive. It is lowered, and energy rays are not irradiated to other regions (for example, the outer periphery of the substrate 11). For example, for the purpose of connecting to a jig, the adhesive force can be maintained at a high level. For example, an energy ray shielding layer may be provided in a region corresponding to the other regions of the substrate 11 by printing or the like, and energy ray irradiation may be performed from the substrate 11 side. .
The adhesive layer 13 can be formed by various adhesives which are generally known in the past. The adhesive layer 13 is formed, for example, by selecting at least any one of a group consisting of a general-purpose adhesive, an energy-ray-curable adhesive, and an adhesive containing a thermal expansion component. As the general-purpose adhesive system, for example, at least any one selected from the group consisting of a rubber-based adhesive, an acrylic-based adhesive, a silicone-based adhesive, a urethane-based adhesive, and a vinyl ether-based adhesive. An adhesive is preferred. The form of the adhesive layer 13 also includes a form having a core material and an adhesive layer provided on both sides of the core material.
The adhesive layer 13 is also preferably a thermally expandable adhesive layer. The thermally expandable adhesive layer is formed with a thermally expandable adhesive. The thermally expandable adhesive contains an adhesive and a thermally expandable component. In the case where the adhesive layer 13 is a thermally expandable adhesive layer, the contact area between the thermally expandable adhesive layer and the adherend is reduced by heating, and the adhesive force can be reduced. As the thermally expandable component system, thermally expandable fine particles can be used. The thermally expandable microparticles are, for example, microparticles made of a substance that is easily vaporized and expanded by heating, and is contained in an elastic shell. Examples of the material system that expands due to vaporization include isobutane, propane, and pentane. In particular, the thermally expandable microparticles are easy to control the surface shape of the adhesive layer after thermal expansion, thereby changing the state of the adhesive layer from a strongly adhesive state to a state easily peeled by heating, so that Better. Moreover, you may use a foaming agent as a heat-expandable component system. The foaming agent is, for example, a chemical substance that undergoes thermal decomposition and has the ability to generate a gas. Examples of the generated gas system include water, carbonic acid gas, and nitrogen. By dispersing the foaming agent in the adhesive, an effect similar to that of the thermally expandable fine particles is exhibited.
The thickness of the adhesive layer 13 is not particularly limited. The thickness of the adhesive layer 13 is usually 1 μm or more and 50 μm or less, and preferably 5 μm or more and 30 μm or less.

(Manufacturing method of semiconductor device)
Fig. 5 (Figs. 5A to 5E) is a diagram showing an example of a method for manufacturing a semiconductor device according to this embodiment.
In the method for manufacturing a semiconductor device according to this embodiment, an adhesive laminate 1A is used.

‧Semiconductor wafer attaching steps
FIG. 5A is a schematic cross-sectional view illustrating a step of attaching the semiconductor wafer CP to the adhesive layer 12 of the adhesive layer 1A (semiconductor wafer attaching step). In this embodiment, as shown in FIG. 5B, a plurality of semiconductor wafers CP are attached to the adhesive layer 12. When the semiconductor wafers CP are attached, they can be attached individually, or a plurality of semiconductor wafers CP can be attached at the same time.
The semiconductor wafer CP used in this embodiment has a circuit surface W1 on which a connection terminal W3 is provided, and a wafer back surface W2 which is a back surface of an element on the opposite side to the circuit surface W1. In this embodiment, the wafer back surface W2 is attached to the adhesive layer 12.

‧Reinforcement frame attaching steps
This embodiment is also the same as the first embodiment, and it is preferable to further include a step of attaching the reinforcing frame 2 to the laminated body 1A (reinforcing frame attaching step) (refer to FIGS. 5A and 5B). The shape of the reinforcing frame 2 is not particularly limited, and an example of the reinforcing frame 2 is the same as that of the first embodiment.
In this embodiment, the step of attaching the reinforcing frame 2 is also the same as in the first embodiment, and may be performed before the step of attaching the semiconductor wafer CP to the laminated body 1A, or the semiconductor wafer CP may be attached to the adhesive layer. The step of the laminate 1A is performed afterwards.

‧Adhesive layer hardening step
FIG. 5C is a schematic cross-sectional view illustrating a step of curing the adhesive layer 12 to form a cured adhesive layer 12A (adhesive layer curing step). By hardening the adhesive layer 12, the semiconductor wafer CP is strongly bonded by hardening the adhesive layer 12A, and the movement of the semiconductor wafer CP in the subsequent resin sealing step can be suppressed.
The method of hardening the adhesive layer 12 is the same as that of the first embodiment, and it is preferable to appropriately select it according to the type of the adhesive contained in the adhesive layer 12.
Also in this embodiment, since the reinforcing frame 2 is adhered to the adhesive layer 12, it is possible to suppress the deflection and curling of the adhesive laminate 1A caused by the shrinkage when the adhesive layer 12 is hardened. Therefore, before the step of hardening the adhesive layer 12 to form a hardened adhesive layer 12A, it is preferable to attach the reinforcing frame 2 to the adhesive layer 12.

‧Sealing step
FIG. 5D is a schematic cross-sectional view illustrating a step (sealing step) of sealing a plurality of semiconductor wafers CP after the formation of the hardened adhesive layer 12A.
In this embodiment, the circuit surface W1 side of the semiconductor wafer CP is covered with the sealing member 30 to form the sealing body 3. A sealing member 30 is also filled between the plurality of semiconductor wafers CP. In this embodiment, since the reinforcing frame 2 is also taken into the inside of the sealing body 3, the rigidity of the sealing body 3 is improved, and it is possible to suppress the semiconductor package from being bent after the resin is sealed.
The method of sealing the plurality of semiconductor wafers CP using the sealing member 30 is not particularly limited, and examples thereof include the method described in the first embodiment. Examples of the material of the sealing member 30 include the materials and compositions described in the first embodiment.
In this embodiment, an additional hardening step described in the first embodiment may be performed. Alternatively, instead of performing an additional curing step, the sealing member 30 may be sufficiently cured by heating in the sealing step.

‧Stripping step
FIG. 5E is a schematic cross-sectional view illustrating a step of peeling the substrate 11 and the adhesive layer 13 of the laminated body 1A after sealing a plurality of semiconductor wafers CP (the case may be referred to as a peeling step).
In this embodiment, the hardened adhesive layer 12A is left on the sealing body 3, and the base material 11 and the adhesive layer 13 are peeled from the sealing body 3. Next, the laminate 1A is peelable at the interface between the adhesive layer 13 and the hardened adhesive layer 12A.
After the substrate peeling step, for example, a connection terminal exposing step (see FIG. 2A), a rewiring layer forming step (see FIG. 2B), and an external terminal electrode connection step (see FIG. 2C) are performed in the same manner as in the first embodiment. (Fig. 2) and singulation step (see Fig. 2D), a semiconductor package 100 can be manufactured. In the method for manufacturing a semiconductor device according to this embodiment, a mounting step may be performed.

‧ Effect of implementation form
According to the method for manufacturing a semiconductor device according to this embodiment, the same effect as that of the first embodiment is exhibited.
In addition, according to the method for manufacturing a semiconductor device according to this embodiment, the adhesive layer 1A includes the adhesive layer 13 between the base material 11 and the adhesive layer 12, so that in the step of curing the adhesive layer, it is possible to Suppresses the floating of the substrate from the adhesive layer.

[Fourth Embodiment]
A method for manufacturing a semiconductor device according to this embodiment is a method for manufacturing a semiconductor device using an adhesive sheet including a substrate and an adhesive layer, and an adhesive layer.
A method for manufacturing a semiconductor device according to this embodiment includes a step of bonding a plurality of the adhesive layers of the semiconductor element to the adhesive layer of an adhesive sheet, and curing the adhesive layer to form a cured adhesive layer. A step of sealing a plurality of the semiconductor elements to form a sealing body having a sealing resin layer, a step of peeling the substrate from the sealing body without peeling the hardening adhesive layer from the sealing body, and forming an electrical connection with the semiconductor element A step of rewiring a layer, and a step of electrically connecting an external terminal electrode to the aforementioned redistribution layer.
The step of peeling the substrate from the sealing body is not a step of peeling the hardening adhesive layer from the sealing body, but a step of peeling at an interface between the adhesive layer and the hardening adhesive layer.
In this specification, the adhesive sheet system has a peelable adhesive force after being adhered to the adherend, and is different from an adhesive sheet system having an adhesive force that is firmly fixed to the adherend like an adhesive layer. .

(Adhesive sheet)
In the method for manufacturing a semiconductor device according to this embodiment, an adhesive sheet 1B (see FIG. 6A) including a substrate 11 and an adhesive layer 13 is used.

(Base material)
The substrate 11 is not particularly limited, and for example, the same substrate as that described in the first embodiment can be used.

(Adhesive layer)
The adhesive layer 13 is provided on the base material 11. As the adhesive layer 13, the same adhesive layer as the adhesive layer described in the third embodiment can be used.

(Manufacturing method of semiconductor device)
FIGS. 6 (FIGS. 6A to 6E) and 7 (FIGS. 7A to 7D) are diagrams showing an example of a method for manufacturing a semiconductor device according to this embodiment.
The method for manufacturing a semiconductor device according to this embodiment uses an adhesive sheet 1B.

‧Semiconductor wafer attaching steps
FIG. 6A is a schematic cross-sectional view illustrating a step of attaching the semiconductor wafer CP to the adhesive layer 13 of the adhesive sheet 1B (semiconductor wafer attaching step).
The semiconductor wafer CP used in this embodiment has a circuit surface W1 on which a connection terminal W3 is provided, and a wafer back surface W2 which is a back surface of an element on the opposite side to the circuit surface W1. The adhesive layer 14 is provided on the wafer back surface W2 of the semiconductor wafer CP. As an adhesive agent contained in the adhesive agent layer 14, the adhesive agent composition of at least any one of the said 1st adhesive agent composition and the said 2nd adhesive agent composition is preferable, for example.
In this embodiment, as shown in FIG. 6B, a plurality of semiconductor wafers CP are attached to the adhesive layer 13 of the adhesive sheet 1B via the adhesive layer 14. When the semiconductor wafers CP are attached, they can be attached individually, or a plurality of semiconductor wafers CP can be attached at the same time.

‧Reinforcement frame attaching steps
In this embodiment, it is preferable to further include a step (reinforcing frame attaching step) of attaching the reinforcing frame 2 to the adhesive sheet 1B (refer to FIGS. 6A and 6B). By attaching the reinforcing frame 2 to the adhesive sheet 1B, the operability of the adhesive sheet 1B to which the semiconductor wafer CP is attached during the manufacturing process of the semiconductor device manufacturing method is improved.
The shape of the reinforcing frame 2 is not particularly limited, and an example of the reinforcing frame 2 is the same as that of the first embodiment.
In this embodiment, the step of attaching the reinforcing frame 2 may be performed before the step of attaching the semiconductor wafer CP to the adhesive sheet 1B, or may be performed after the step of attaching the semiconductor wafer CP to the adhesive sheet 1B.

‧Adhesive layer hardening step
FIG. 6C is a schematic cross-sectional view illustrating a step of curing the adhesive layer 14 to form a cured adhesive layer 14A (adhesive layer curing step). By hardening the adhesive layer 14, the semiconductor wafer CP is strongly adhered by curing the adhesive layer 14A, and the movement of the semiconductor wafer CP in the subsequent resin sealing step can be suppressed.
The method of hardening the adhesive layer 14 is the same as that of the first embodiment, and it is preferably selected as appropriate in accordance with the type of the adhesive contained in the adhesive layer 14.
Also in this embodiment, since the reinforcing frame 2 is attached to the adhesive sheet 1B, it is possible to suppress the deflection and curling of the adhesive sheet 1B due to shrinkage when the adhesive layer 14 is cured. Therefore, before the step of hardening the adhesive layer 14 to form a hardened adhesive layer 14A, it is preferable to attach the reinforcing frame 2 to the adhesive layer 13.

‧Sealing step
FIG. 6D is a schematic cross-sectional view illustrating a step (sealing step) of sealing a plurality of semiconductor wafers CP after the formation of the hardened adhesive layer 14A.
In this embodiment, the circuit surface W1 side of the semiconductor wafer CP is covered with a sealing member 30 to form a sealing body 3B. A sealing member 30 is also filled between the plurality of semiconductor wafers CP. In the present embodiment, since the reinforcing frame 2 and the hardening adhesive layer 14A are placed inside the sealing body 3B, the rigidity of the sealing body 3B is improved, and it is possible to suppress bending of the semiconductor package generated after resin sealing. The method of sealing the plurality of semiconductor wafers CP using the sealing member 30 is not particularly limited, and examples thereof include the method described in the first embodiment. Examples of the material of the sealing member 30 include the materials and compositions described in the first embodiment.
In this embodiment, an additional hardening step described in the first embodiment may be performed. Alternatively, instead of performing an additional curing step, the sealing member 30 may be sufficiently cured by heating in the sealing step.

‧Adhesive sheet peeling step
FIG. 6E is a schematic cross-sectional view illustrating a step of peeling the adhesive sheet 1B after sealing a plurality of semiconductor wafers CP (the case may be referred to as an adhesive sheet peeling step).
In this embodiment, the hardened adhesive layer 14A is left on the sealing body 3B, and the adhesive sheet 1B (the base material 11 and the adhesive layer 13) is peeled from the sealing body 3B. The adhesive sheet 1B is peelable at the interface between the adhesive layer 13 and the hardening adhesive layer 14A.

‧Procedure for connecting terminal exposure
FIG. 7A is a schematic cross-sectional view illustrating a step of exposing the connection terminal W3 of the semiconductor wafer CP on the surface of the sealing body 3B (the connection terminal exposing step).
In this embodiment, a part or the whole of the sealing resin layer of the sealing body 3B covering the circuit surface W1 of the semiconductor wafer CP or the connection terminal W3 is removed to expose the connection terminal W3. The step of exposing the connection terminal in this embodiment can be performed in the same manner as in the first embodiment.

‧Re-wiring layer formation steps
FIG. 7B is a schematic cross-sectional view illustrating a step of forming a redistribution layer 4 electrically connected to the semiconductor wafer CP (a redistribution layer formation step).
In this embodiment, the redistribution layer 4 and the connection terminal W3 exposed on the surface of the sealing body 3B are electrically connected. The redistribution layer forming step in this embodiment can be performed in the same manner as in the first embodiment.
The redistribution layer 4 of this embodiment also includes an external electrode pad 41 for connecting external terminal electrodes. In this embodiment, the external electrode pads 41 are also formed in a plurality of places. In this embodiment, an external electrode pad 41 is also formed that is fan-out outside the area of the semiconductor wafer CP.

‧External terminal electrode connection steps
FIG. 7C is a schematic cross-sectional view illustrating a step (external terminal electrode connection step) of electrically connecting the external terminal electrode 5 to the redistribution layer 4. The external terminal electrode connection step in this embodiment can be performed in the same manner as in the first embodiment.

‧Single chip step
FIG. 7D is a schematic cross-sectional view illustrating a step of singulating the sealing body 3B to which the external terminal electrode 5 is connected (a singulating step).
The method of singulating the sealing body 3B is not particularly limited, and examples thereof include the same method as in the first embodiment. The step of singulating the sealing body 3B may be performed by attaching the sealing body 3B to an adhesive sheet such as a dicing sheet.
In this embodiment, a semiconductor package 100C including a plurality of semiconductor wafers CP is manufactured by singulating the sealing body 3B into a plurality of semiconductor wafers CP. The semiconductor package 100C-based hardening adhesive layer 14A is provided on the wafer back surface W2 of the semiconductor wafer CP. That is, the adhesive layer 14 provided on the wafer back surface W2 of the semiconductor wafer CP is not used for temporary fixing after being peeled off from the resin, but is hardly adhered to the semiconductor wafer CP as a hardened adhesive layer 14A and is included as a semiconductor Package part of 100C.
In this embodiment, since the external terminal electrode 5 is connected to the external electrode pad 41 outside the area of the fan-out to the semiconductor chip CP, the semiconductor package 100C can be used as a fan-out type wafer-level package. (FO-WLP).

‧installation steps
It is also preferable that the method of manufacturing a semiconductor device according to this embodiment includes a step of mounting the semiconductor package 100C on a printed circuit board or the like (the mounting step may be called).

‧ Effect of implementation form
According to the method for manufacturing a semiconductor device according to this embodiment, the same effect as that of the first embodiment is exhibited.
In addition, according to the method for manufacturing a semiconductor device according to this embodiment, the semiconductor wafer CP is attached to the adhesive sheet 1B via the adhesive layer 14 provided on the back surface W2 of the wafer. It is also possible to use a state in which the entire surface of the wafer before being turned into a wafer is laminated with an adhesive layer.

[Fifth Embodiment]
The manufacturing method of the semiconductor device of this embodiment is a manufacturing method using an adhesive laminate including a base material and an adhesive layer. The adhesive layer includes a first adhesive layer and a second adhesive layer. The materials of the first adhesive layer and the second adhesive layer are different from each other. In this embodiment, the second laminate layer is formed on the base material, and the second laminate layer is formed on the second adhesive layer to form an adhesive laminate of the first adhesive layer, which will be described as an example. In this embodiment, for example, a resin film can be used as the base material of the adhesive laminate.
A method for manufacturing a semiconductor device according to this embodiment includes a step of attaching a hard support to the first adhesive layer, a step of peeling the substrate from the second adhesive layer, and attaching a plurality of semiconductor elements to the semiconductor device. The step of the second adhesive layer, the step of hardening the first adhesive layer to form a first hardened adhesive layer, and the step of hardening the second adhesive layer to form a second hardened adhesive layer, sealing a plurality of the semiconductors. A step of forming a sealing body having a sealing resin layer, a step of forming a rewiring layer electrically connected to the semiconductor element, a step of electrically connecting an external terminal electrode to the rewiring layer, and removing the first The second hardening adhesive layer is a step of removing the first hardening adhesive layer and the hard support; when a plurality of the semiconductor elements are attached to the adhesive laminate, a circuit having a connection terminal with the semiconductor element is connected. The back surface of the device on the opposite side is attached to the adhesive layer, and is formed by sealing the semiconductor device. Later seal, removing a portion covering the circuit surface of the sealing resin layer of the connection terminal is exposed, or the whole, so that the re-wiring layer is electrically connected to the exposed terminals of the connector.
In the step of peeling the substrate from the second adhesive layer, it is preferable to peel at the interface between the substrate and the second adhesive layer.
It is preferable to harden the first adhesive layer and the second adhesive layer by the same steps, and it is more preferable to harden them at the same time.

(Laminated)
In the method for manufacturing a semiconductor device according to this embodiment, a bonding laminate 1C (see FIG. 8A) including the substrate 11, the first adhesive layer 15, and the second adhesive layer 16 is used. The next laminate 1C is between the substrate 11 and the first adhesive layer 15 and includes a second adhesive layer 16.

(Base material)
The substrate 11 is not particularly limited, and for example, the same substrate as that described in the first embodiment can be used. In this embodiment, the base material 11 is preferably a material having flexibility. In this embodiment, a case where a resin film is used as the base material 11 is described as an example.

(Adhesive layer)
It is preferable that the first adhesive layer 15 and the second adhesive layer 16 contain a hardening type adhesive that is hardened by receiving external energy. Examples of the externally supplied energy system include ultraviolet rays, electron beams, and heat. Each of the first adhesive layer 15 and the second adhesive layer 16 is independent, and it is preferable that at least one of an ultraviolet curing adhesive and a thermal curing adhesive is contained. In this embodiment, the adhesives contained in the first adhesive layer 15 and the adhesives contained in the second adhesive layer 16 are independent of each other, for example, the first adhesive composition and the second adhesive. An adhesive composition of at least any one of the adhesive composition is preferable. The first adhesive layer 15 and the second adhesive layer 16 are preferably UV-curable adhesive layers. When the first adhesive layer 15 and the second adhesive layer 16 are UV-curable adhesive layers, it is preferable that the hard support 17 is formed of a material that can transmit ultraviolet rays.

(Manufacturing method of semiconductor device)
8 (FIGS. 8A to 8E) and 9 (FIGS. 9A to 9E) are diagrams showing an example of a method for manufacturing a semiconductor device according to this embodiment.
In the method for manufacturing a semiconductor device according to this embodiment, an adhesive laminate 1C is used.

‧Steps for attaching rigid support
FIG. 8A is a schematic cross-sectional view illustrating the step of attaching the hard support 17 to the first adhesive layer 15 (the step of attaching the hard support).
The material of the rigid support 17 may be appropriately determined in consideration of mechanical strength, heat resistance, and the like. Examples of the material of the hard support 17 include metal materials, non-metal inorganic materials, resin materials, and composite materials. Examples of the metal material include SUS. Examples of non-metallic inorganic materials include glass and silicon wafers. Examples of the resin material include epoxy resin, ABS, acrylic, engineering plastic, super engineering plastic, polyimide, polyimide, and the like. Examples of the composite material system include glass epoxy resin. Among these materials, SUS, glass, and silicon wafers are preferred. Examples of engineering plastics include nylon, polycarbonate (PC), and polyethylene terephthalate (PET). Examples of the super engineering plastics include polyphenylene sulfide (PPS), polyether fluorene (PES), and polyether ether ketone (PEEK).
The thickness of the rigid support 17 may be appropriately determined in consideration of mechanical strength, operability, and the like. The thickness of the rigid support 17 is, for example, 100 μm or more and 50 mm or less.
In this embodiment, since the second adhesive layer 16 and the first adhesive layer 15 are attached to the hard support 17, the operability of the semiconductor wafer CP in the manufacturing process of the semiconductor device manufacturing method is improved.

‧Substrate peeling step
FIG. 8B is a schematic cross-sectional view illustrating a step (substrate peeling step) of peeling the substrate 11 from the laminated body 1C after the hard support attaching step.
In the manufacturing method of this embodiment, the adhesive laminate 1C is peelable at the interface between the second adhesive layer 16 and the substrate 11.

‧Semiconductor wafer attaching steps
FIG. 8C is a schematic cross-sectional view illustrating a step (semiconductor wafer attaching step) of attaching the semiconductor wafer CP to the second adhesive layer 16 exposed by peeling off the base material 11.
The semiconductor wafer CP used in this embodiment has a circuit surface W1 on which a connection terminal W3 is provided, and a wafer back surface W2 which is a back surface of an element on the opposite side to the circuit surface W1.
In this embodiment, a plurality of semiconductor wafers CP are attached to the second adhesive layer 16 as shown in FIG. 8C. When the semiconductor wafers CP are attached, they can be attached individually, or a plurality of semiconductor wafers CP can be attached at the same time.

‧Adhesive layer hardening step
FIG. 8D shows a step of curing the first adhesive layer 15 to form a first cured adhesive layer 15A, and curing the second adhesive layer 16 to form a second cured adhesive layer 16A (adhesive layer curing step) ). By hardening the second adhesive layer 16, the semiconductor wafer CP is strongly bonded by the second hardening adhesive layer 16A, and the movement of the semiconductor wafer CP in the subsequent resin sealing step can be suppressed.
The method of hardening the first adhesive layer 15 and the second adhesive layer 16 is the same as in the first embodiment, and is appropriately selected according to the type of the adhesive contained in the first adhesive layer 15 and the second adhesive layer 16. Better. In the case where the first adhesive layer 15 and the second adhesive layer 16 are configured by the same adhesive, the first adhesive layer 15 and the second adhesive layer 16 are preferably cured simultaneously.
When the second hardening adhesive layer 16A is used as a protective film for protecting the back surface of the wafer, this protective film is preferably colored, and black is more preferable. Therefore, it is preferable to mix the aforementioned coloring agent in the second adhesive layer 16.

‧Sealing step
FIG. 8E is a schematic cross-sectional view illustrating a step (sealing step) of sealing a plurality of semiconductor wafers CP after the formation of the first hardening adhesive layer 15A and the second hardening adhesive layer 16A.
In this embodiment, the circuit surface W1 side of the semiconductor wafer CP is covered with the sealing member 30 to form the sealing body 3. A sealing member 30 is also filled between the plurality of semiconductor wafers CP. In this embodiment, since the rigid support body 17 is attached to the sealing body 3, the rigidity of the sealing body 3 is improved, and it is possible to suppress the semiconductor package from being bent after the resin is sealed. The method of sealing the plurality of semiconductor wafers CP using the sealing member 30 is not particularly limited, and examples thereof include the method described in the first embodiment. Examples of the material of the sealing member 30 include the materials and compositions described in the first embodiment.
In this embodiment, an additional hardening step described in the first embodiment may be performed. Alternatively, instead of performing an additional curing step, the sealing member 30 may be sufficiently cured by heating in the sealing step.

‧Procedure for connecting terminal exposure
FIG. 9A is a schematic cross-sectional view illustrating a step of exposing the connection terminal W3 of the semiconductor wafer CP on the surface of the sealing body 3 (the connection terminal exposing step).
In this embodiment, a part or the whole of the sealing resin layer of the sealing body 3 covering the circuit surface W1 of the semiconductor wafer CP or the connection terminal W3 is removed to expose the connection terminal W3. The step of exposing the connection terminal in this embodiment can be performed in the same manner as in the first embodiment.

‧Re-wiring layer formation steps
FIG. 9B is a schematic cross-sectional view illustrating a step of forming a redistribution layer 4 electrically connected to the semiconductor wafer CP (a redistribution layer formation step).
In this embodiment, the redistribution layer 4 is electrically connected to the connection terminal W3 exposed on the surface of the sealing body 3. The redistribution layer forming step in this embodiment can be performed in the same manner as in the first embodiment.
The redistribution layer 4 of this embodiment also includes an external electrode pad 41 for connecting external terminal electrodes. In this embodiment, the external electrode pads 41 are also formed in a plurality of places. In this embodiment, an external electrode pad 41 is also formed that is fan-out outside the area of the semiconductor wafer CP.

‧External terminal electrode connection steps
FIG. 9C is a schematic cross-sectional view illustrating a step (external terminal electrode connection step) of electrically connecting the external terminal electrode 5 to the redistribution layer 4. The external terminal electrode connection step in this embodiment can be performed in the same manner as in the first embodiment.

‧Removal steps
FIG. 9D is a schematic cross-sectional view illustrating a step (removal step) of removing the hard support 17. In this embodiment, the first hardening adhesive layer 15A is also removed, and the second hardening adhesive layer 16A is exposed. The second hardening adhesive layer 16A may be used as a protective film for protecting the back surface of the wafer. The surface of the second hardened adhesive layer 16A as a protective film may be printed with a laser mark or the like.

‧Single chip step
FIG. 9E is a schematic cross-sectional view illustrating a step of singulating the sealing body 3 to which the external terminal electrode 5 is connected (step of singulating).
The method of singulating the sealing body 3 is not particularly limited, and examples thereof include the same method as in the first embodiment. The step of singulating the sealing body 3 may be performed by attaching the sealing body 3 to an adhesive sheet such as a dicing sheet.
In the present embodiment, a semiconductor package 100 including a plurality of semiconductor wafers CP is manufactured by singulating the sealing body 3 into a plurality of semiconductor wafers CP. In the semiconductor package 100, the second hardening adhesive layer 16A is provided on the wafer back surface W2 of the semiconductor wafer CP. That is, the second adhesive layer 16 provided on the wafer back surface W2 of the semiconductor wafer CP is not temporarily fixed after being peeled off from the resin, but is firmly adhered to the semiconductor wafer as the second hardening adhesive layer 16A. CP is included as part of the semiconductor package 100.
In this embodiment, since the external terminal electrode 5 is connected to the external electrode pad 41 outside the area of the fan-out to the semiconductor chip CP, the semiconductor package 100 can be used as a fan-out type wafer-level package. (FO-WLP).

‧installation steps
It is also preferable that the method for manufacturing a semiconductor device according to this embodiment includes a step of mounting the semiconductor package 100 on a printed circuit board or the like (the mounting step may be called).

‧ Effect of implementation form
According to the method for manufacturing a semiconductor device according to this embodiment, since the hard support 17 is adhered to the first adhesive layer 15, the adhesiveness between the hard support 17 and the first adhesive layer 15 can be ensured and suppressed to The position of the semiconductor wafer CP at the time of sealing is shifted. The second hardening adhesive layer 16A can be used as a protective film remaining on the back surface of the wafer. Since the first hardened adhesive layer 15A and the second hardened adhesive layer 16A having the function of suppressing the position shift and the protective function can be formed in the same step, the manufacturing steps can be simplified.

[Deformation of implementation form]
The present invention is not limited in any way by the embodiments described above. The present invention is in a range that can achieve the object of the present invention, and includes modifications of the above-mentioned embodiments.
For example, the system on a semiconductor wafer or a semiconductor wafer is not limited to the arrangement, shape, and the like shown in the figure. The connection structure and the like to the external terminal electrodes in the semiconductor package are not limited to those described in the foregoing embodiment. In the foregoing embodiment, a mode for manufacturing a FO-WLP type semiconductor package is described as an example, but the present invention is also applicable to a mode for manufacturing other semiconductor packages such as a fan-in type WLP.
In the foregoing embodiment, a case in which a semiconductor package including a plurality of semiconductor wafers is singulated to form a semiconductor package including a plurality of semiconductor wafers will be described as an example, but the present invention is not limited to this. Such an appearance. For example, the singulation step may be a state in which the respective semiconductor packages are singulated into a single body including semiconductor elements such as semiconductor wafers. In addition, for example, the singulation step may be a state in which each of the semiconductor packages is a semiconductor element including three or more semiconductor wafers, and the sealing body is singulated.
In the foregoing embodiment, the state in which the semiconductor element is attached to the substrate via the laminated adhesive layer is described as an example, but the number of layers of the adhesive layer is not limited to two, and it may be For 3 or more floors.
In the aforementioned embodiment, the adhesive laminate in which the adhesive layer has been laminated on the base material is described as an example, but the present invention is not limited to this aspect. As another embodiment, for example, a state in which an adhesive layer is laminated on a semiconductor element such as a semiconductor wafer may be used. In this case, the semiconductor element can also be attached to the substrate through the adhesive layer on the back of the element, and can also be attached to the adhesive through the adhesive layer on the back of the element and the adhesive layer on the adhesive sheet. Flakes. The number of layers of the adhesive layer to be laminated on the semiconductor element is not limited to two, and may be three or more.

1‧‧‧ Laminated

1A‧‧‧Laminated

1B‧‧‧Adhesive sheet

1C‧‧‧Laminated

2‧‧‧ Reinforcement Framework

3‧‧‧Sealed body

3A‧‧‧Sealed body

3B‧‧‧Sealed body

3S‧‧‧Surface of Sealing Body 3

4‧‧‧ redistribution layer

5‧‧‧External terminal electrode

11‧‧‧ Substrate

12‧‧‧ Adhesive layer

12A‧‧‧hardened adhesive layer

13‧‧‧Adhesive layer

14‧‧‧ Adhesive layer

14A‧‧‧hardened adhesive layer

15‧‧‧first adhesive layer

15A‧‧‧First hardening adhesive layer

16‧‧‧Second adhesive layer

16A‧‧‧Second hardening adhesive layer

17‧‧‧ rigid support

30‧‧‧Sealing member

41‧‧‧External electrode pad

100‧‧‧Semiconductor Package

100A‧‧‧Semiconductor Package

100C‧‧‧Semiconductor Package

CP‧‧‧Semiconductor wafer

W1‧‧‧Circuit Surface

W2‧‧‧ back of the chip

W3‧‧‧connecting terminal

FIG. 1A is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the first embodiment.

FIG. 1B is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the first embodiment.

FIG. 1C is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the first embodiment.

FIG. 1D is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the first embodiment.

FIG. 1E is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the first embodiment.

Fig. 2A is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the first embodiment.

FIG. 2B is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the first embodiment.

FIG. 2C is a cross-sectional view illustrating a method of manufacturing the semiconductor device according to the first embodiment.

FIG. 2D is a cross-sectional view illustrating a method of manufacturing the semiconductor device according to the first embodiment.

Fig. 3A is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a second embodiment.

FIG. 3B is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment.

FIG. 3C is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to the second embodiment.

3D is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment.

FIG. 4A is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to the second embodiment.

FIG. 4B is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment.

FIG. 4C is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment.

4D is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the second embodiment.

Fig. 5A is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a third embodiment.

FIG. 5B is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the third embodiment.

FIG. 5C is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to the third embodiment.

Fig. 5D is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a third embodiment.

FIG. 5E is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the third embodiment.

Fig. 6A is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fourth embodiment.

Fig. 6B is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fourth embodiment.

FIG. 6C is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to the fourth embodiment.

Fig. 6D is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fourth embodiment.

FIG. 6E is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the fourth embodiment.

Fig. 7A is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fourth embodiment.

FIG. 7B is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to the fourth embodiment.

FIG. 7C is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the fourth embodiment.

FIG. 7D is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the fourth embodiment.

Fig. 8A is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fifth embodiment.

FIG. 8B is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to the fifth embodiment.

Fig. 8C is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fifth embodiment.

Fig. 8D is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fifth embodiment.

FIG. 8E is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to the fifth embodiment.

Fig. 9A is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fifth embodiment.

Fig. 9B is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fifth embodiment.

Fig. 9C is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fifth embodiment.

Fig. 9D is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fifth embodiment.

Fig. 9E is a cross-sectional view illustrating a method for manufacturing a semiconductor device according to a fifth embodiment.

Claims (15)

A method for manufacturing a semiconductor device, comprising: A step of attaching the substrate and the semiconductor element via the adhesive layer; A step of hardening the aforementioned adhesive layer to form a hardened adhesive layer; A step of sealing a plurality of the aforementioned semiconductor elements to form a sealing body having a sealing resin layer; A step of peeling the base material from the sealing body without peeling the hardening adhesive layer from the sealing body; A step of forming a redistribution layer electrically connected to the semiconductor element; and A step of electrically connecting the external terminal electrode to the redistribution layer. The method for manufacturing a semiconductor device according to claim 1, wherein: A plurality of the semiconductor elements are attached to the adhesive layer having the adhesive laminate of the substrate and the adhesive layer. The method for manufacturing a semiconductor device according to claim 2, wherein: The said adhesive layer is laminated directly on the said base material. The method for manufacturing a semiconductor device according to claim 2, wherein: An adhesive layer is included between the adhesive layer and the substrate. The method for manufacturing a semiconductor device according to claim 4, wherein: The step of peeling the base material from the sealing body is a step of peeling at the interface between the adhesive layer and the hardening adhesive layer instead of peeling the hardening adhesive layer from the sealing body. The method for manufacturing a semiconductor device according to claim 5, wherein: The adhesive layer is a thermally expandable adhesive layer. The method for manufacturing a semiconductor device according to claim 1, wherein: The semiconductor element includes the adhesive layer. The method for manufacturing a semiconductor device according to claim 7, wherein: The adhesive layer of the semiconductor element is bonded to the adhesive layer of the adhesive sheet having the substrate and the adhesive layer. The method for manufacturing a semiconductor device according to claim 8, wherein: The step of peeling the base material from the sealing body is a step of peeling at the interface between the adhesive layer and the hardening adhesive layer instead of peeling the hardening adhesive layer from the sealing body. The method for manufacturing a semiconductor device according to claim 2, wherein: The aforementioned adhesive layer includes at least a first adhesive layer and a second adhesive layer. The materials of the first adhesive layer and the second adhesive layer are different from each other. The method for manufacturing a semiconductor device according to claim 10, wherein, The step of curing the adhesive layer to form the cured adhesive layer includes curing the first adhesive layer to form a first cured adhesive layer, and curing the second adhesive layer to form a second cured adhesive layer. A step of. The method for manufacturing a semiconductor device according to claim 2, wherein: When a plurality of the semiconductor element and the base material are pasted through the adhesive layer, the element back surface opposite to the circuit surface of the semiconductor element having a connection terminal is attached to the adhesive layer, After the plurality of semiconductor elements are sealed to form the sealing body, a part or the whole of the sealing resin layer covering the circuit surface is removed to expose the connection terminals, The redistribution layer is electrically connected to the exposed connection terminal. The method for manufacturing a semiconductor device according to claim 2, wherein: When a plurality of the semiconductor element and the base material are attached via the adhesive layer, a circuit surface of the semiconductor element having a connection terminal is attached to the adhesive layer, After peeling the base material from the sealing body, removing a part or the whole of the hardening adhesive layer covering the circuit surface to expose the connection terminal, The redistribution layer is electrically connected to the exposed connection terminal. The method for manufacturing a semiconductor device according to any one of claim 1 to claim 13, wherein: Before the step of curing the adhesive layer to form the cured adhesive layer, a reinforcing frame is attached to the adhesive layer. An adhesive laminate comprising: Substrate, with An adhesive layer containing an adhesive composition, Its characteristics are: The said adhesive composition system contains an adhesive polymer component and a hardening component, And it is used in the manufacturing process of the semiconductor device. The manufacturing process of the semiconductor device has: A step of attaching a plurality of semiconductor elements to the aforementioned adhesive layer of the aforementioned adhesive laminate; A step of hardening the aforementioned adhesive layer to form a hardened adhesive layer; A step of sealing a plurality of the aforementioned semiconductor elements to form a sealing body; A step of not peeling the hardening adhesive layer from the seal, but peeling the substrate from the seal; A step of forming a redistribution layer electrically connected to the semiconductor element; and A step of electrically connecting the external terminal electrode to the redistribution layer.