TW201921545A - Substrate processing system and substrate processing method - Google Patents

Abstract

An object of the invention is to provide a substrate processing system that can suppress chipping and produce high quality chips with an attached DAF, without requiring the step of thermal contraction that suppresses chipping during substrate transport and chip pickup. The substrate processing system of the invention comprises a thinning section in which the substrate is thinned by processing a second primary surface located on the opposite side of a diced substrate from a first primary surface that is protected by protective tape, a DAF adhesion section in which a DAF (Die Attach Film) is adhered to the second primary surface of the substrate that has been thinned by the thinning section, an expansion section which expands the spacing between the plurality of chips that constitute the substrate adhered to the DAF, and a mounting section which attaches the substrate having a spacing between chips that has been expanded by the expansion section to a frame via the DAF and an adhesive tape.

Description

Substrate processing system and substrate processing method

The invention relates to a substrate processing system and a substrate processing method.

In recent years, in response to the demand for miniaturization and weight reduction of semiconductor devices, "the first main surface of a substrate such as a semiconductor wafer is formed with components, circuits, and terminals. Step of reducing the thickness of the substrate by the second main surface on the side ". When the substrate is thinned, the first main surface of the substrate is protected by a protective tape.

In addition, semiconductor devices are developing toward high volume, and wafers are moving toward stacking. A wafer is generally produced by dicing a semiconductor wafer after the semiconductor wafer is thinned. For bonding between the wafers and bonding of the wafer to the substrate, a bonding sheet for wafer bonding called DAF (Die Attach Film) is used.

In Patent Document 1, a DAF and a stretch sheet are sequentially arranged on a second main surface of a thinned semiconductor wafer, and a protective tape is removed from the first main surface of the semiconductor wafer. A V-shaped groove is formed on the first main surface. After that, the expanded sheet is radially expanded to divide the semiconductor wafer and the DAF along the V-shaped groove. Thereby, a semiconductor device composed of a DAF and a wafer is manufactured.

The stretched sheet is mounted on the ring frame so as to cover the opening portion of the ring frame, and is bonded to the semiconductor wafer through the DAF through the opening portion of the ring frame. The device for expanding the stretched sheet includes an annular frame holding member that holds the annular frame, and an expansion tube disposed inside the annular frame holding member. The outer diameter of the expansion tube is smaller than the inner diameter of the ring frame. The inner diameter of the expansion tube is larger than the outer diameter of the semiconductor wafer bonded to the expanded sheet mounted on the annular frame through the DAF. The frame holding member is lowered relative to the expansion tube, so that the expanded sheet mounted on the ring frame is radially expanded, and the semiconductor wafer and the DAF are divided along the V-shaped groove. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2011-91240

[Problems to be solved by the invention]

The stretch sheet stretches loose due to expansion. The slackness of the stretched sheet may cause chipping during contact between the wafers during substrate transfer or wafer picking.

Therefore, in order to eliminate the slack of the stretched sheet, we consider heating the stretched sheet to make it heat shrink. The heating of the stretched sheet is performed in an annular region between the inner periphery of the annular frame and the outer periphery of the substrate.

However, since the thermal shrinkage of the stretched sheet is not uniform, a problem occurs that the center of the substrate deviates from the center of the opening portion of the ring frame. In addition, there is a problem that the material of the stretch sheet is limited to a heat-shrinkable material.

In view of the above-mentioned problems, a main object of the present invention is to provide a substrate processing system that does not require thermal shrinkage to suppress chipping during substrate transportation or wafer picking, and can suppress chipping and produce a DAF-attached wafer with good quality. . [Means to solve the problem]

In order to solve the above-mentioned problem, according to an aspect of the present invention, a substrate processing system is provided, which includes a thinned portion that is opposite to the first main surface on the opposite side of the first main surface protected by the protective tape of the cut substrate Processing to thin the substrate; a DAF attachment portion that attaches a DAF (Die Attach Film) to the second main surface of the substrate thinned by the thin portion; an extension portion, which Increasing the interval between the plurality of wafers constituting the substrate to which the DAF is attached; and a mounting portion that extends the substrate by which the interval between the wafers is enlarged by the extension portion, passes through the DAF and the adhesive tape Installed in the frame. [Effect of the invention]

According to an aspect of the present invention, a substrate processing system capable of producing a high-quality DAF-attached wafer without suppressing thermal shrinkage to suppress chipping during substrate transportation or wafer pick-up can be provided. .

Hereinafter, the aspect for implementing this invention is demonstrated with reference to drawings. In each drawing, the same or corresponding symbols are attached to the same or corresponding structures, and descriptions thereof are omitted. In the following description, the X direction, the Y direction, and the Z direction are mutually perpendicular directions, the X direction and the Y direction are horizontal directions, and the Z direction is a vertical direction. The direction of rotation with the vertical axis as the center of rotation is called the θ direction.

[First Embodiment] <Substrate Processing System> FIG. 1 is a plan view showing a substrate processing system according to a first embodiment. The substrate processing system 1 performs cutting of the substrate 10, thinning of the substrate 10, attachment of a DAF (Die Attach Film) to the substrate 10, enlargement of a space between the wafers, mounting of the substrate 10, and the like. The substrate processing system 1 includes a loading / unloading station 20, a processing station 30, and a control device 90.

At the loading / unloading station 20, the carrier C is carried in or out from the outside. The carrier C stores a plurality of substrates 10 at intervals in the Z direction. The loading / unloading station 20 includes a mounting table 21 and a transfer area 25.

The mounting table 21 includes a plurality of mounting plates 22. The plurality of mounting plates 22 are aligned in a row in the Y direction. A carrier C is placed on each of the placing plates 22. The substrate C before processing can be stored on the carrier C on one mounting plate 22, and the substrate 10 after the processing can be stored on the carrier C on the other mounting plate 22.

The number of the mounting plates 22 is not limited to the number shown in the figure. In addition, in addition to the carrier C, a carrier or the like for recovering the substrate 10 in which a defect occurs may be placed on the mounting plate 22.

The transfer area 25 is arranged adjacent to the mounting table 21 in the X direction. In the conveyance area 25, a conveyance path 26 extending in the Y direction and a conveyance device 27 movable along the conveyance path 26 are provided. The conveying device 27 may be provided so as to be movable in the X direction, the Z direction, and the θ direction in addition to the Y direction. The transfer device 27 transfers the substrate 10 between the carrier C placed on the mounting plate 22 and the transfer unit 35 of the processing station 30.

The processing station 30 includes a transfer area 31, a transfer section 35, and various processing sections described later. The arrangement or number of processing units is not limited to the arrangement or number shown in FIG. 1, and can be arbitrarily selected. In addition, a plurality of processing units may be distributed or integrated in accordance with an arbitrary unit.

The conveyance area 31 is provided on the opposite side to the X direction of the conveyance area 25 with reference to the transfer portion 35. The transfer section 35 and various processing sections are provided separately from the conveyance area 31 and are provided so as to surround the conveyance area 31.

In the conveyance area 31, a conveyance path 32 extending in the X direction and a conveyance device 33 movable along the conveyance path 32 are provided. The conveying device 33 may be provided so as to be movable in the Y direction, the Z direction, and the θ direction in addition to the X direction. The transfer device 33 transfers the substrate 10 between the processing sections adjacent to the transfer area 31. The same applies to the second embodiment and the third embodiment described later.

The control device 90 is composed of, for example, a computer. As shown in FIG. 1, the control device 90 includes a CPU (Central Processing Unit) 91, a storage medium 92 such as a memory, an input interface 93, and an output interface 94. The control device 90 causes the CPU 91 to execute programs stored in the storage medium 92 to perform various controls. The control device 90 receives signals from the outside through the input interface 93 and sends signals to the outside through the output interface 94.

The program of the control device 90 is stored in the information storage medium and is installed from the information storage medium. Examples of the information storage medium include a hard disk (HD), a flexible disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card. In addition, programs can also be downloaded and installed from the server via the Internet.

<Substrate before processing by substrate processing system> FIG. 2 is a perspective view showing a substrate before processing by the substrate processing system according to the first embodiment. The substrate 10 is, for example, a semiconductor substrate or a sapphire substrate. The first main surface 11 (see FIG. 4 and the like) of the substrate 10 is divided by a plurality of scribe lines formed in a grid shape, and elements, circuits, terminals, and the like are formed in advance in the divided areas.

A back grinding tape (hereinafter also referred to as a "BG tape") 41 is attached to the first main surface 11 of the substrate 10. The BG tape 41 protects the first main surface 11 of the substrate 10 and protects components, circuits, terminals, and the like formed in advance on the first main surface 11.

The BG tape 41 is composed of a sheet-like substrate and an adhesive applied to the surface of the sheet-like substrate. The adhesive may be one which hardens when it is irradiated with ultraviolet rays and has reduced adhesion. After the adhesion is reduced, the BG tape 41 can be easily peeled from the substrate 10 by a peeling operation.

The BG tape 41 is attached to the BG frame 49 so as to cover the opening portion of the annular BG frame 49, and is bonded to the substrate 10 at the opening portion of the BG frame 49. Thereby, the BG frame 49 can be held to carry the substrate 10, and the operability of the substrate 10 can be improved.

In addition, in this embodiment, the substrate 10 is supplied to the substrate processing system 1 with the BG tape 41 mounted on the BG frame 49, but the substrate 10 can also be mounted on the substrate processing system 1 through the BG tape 41. BG frame 49. That is, the substrate processing system 1 may include a processing unit that mounts the substrate 10 on the BG frame 49 through the BG tape 41.

<Substrate after processing by substrate processing system> FIG. 3 is a perspective view showing a substrate after processing is performed by the substrate processing system according to the first embodiment. The substrate 10 is subjected to processing such as dicing, thinning, adhesion of DAF 15 and enlargement of the interval between wafers 13 and then is mounted on the frame 59 through DAF (Die Attach Film) 15 and adhesive tape 51.

DAF15 is a bonding sheet for wafer bonding. DAF15 is used for bonding between stacked wafers, bonding of wafers to substrates, and the like. DAF15 can be either conductive or insulating.

The adhesive tape 51 is composed of a sheet-like substrate and an adhesive applied to the surface of the sheet-like substrate. The adhesive tape 51 is attached to the frame 59 so as to cover the opening portion of the ring-shaped frame 59, and is bonded to the substrate 10 at the opening portion of the frame 59. Thereby, the frame 59 can be held to carry the substrate 10, and the operability of the substrate 10 can be improved.

In addition, although the details will be described later, the substrate 10 may be mounted on the frame 59 through the adhesive tape 51 instead of being mounted on the BG frame 49 through the adhesive tape 51.

Hereinafter, the cutting section 100, the thinning section 200, the DAF attaching section 300, the DAF dividing processing section 400, the extension section 510, the ultraviolet irradiation section 520, the mounting section 530, and the protective tape cutting section 610 disposed in the processing station 30, The protective tape peeling section 620 will be described in this order.

<Cutting part> FIG. 4 is a figure which shows the cutting part of 1st Embodiment. The dicing unit 100 performs dicing of the substrate 10. Here, the dicing of the substrate 10 refers to a process for dividing the substrate 10 into a plurality of wafers 13, and includes the division of the substrate 10 and a starting point for forming the division on the substrate 10. The cutting section 100 includes, for example, a substrate holding section 110, a substrate processing section 120, and a moving mechanism section 130.

The substrate holding portion 110 holds the substrate 10 through the BG tape 41. The substrate 10 may be kept horizontal. For example, the first main surface 11 of the substrate 10 protected by the BG tape 41 is a bottom surface, and the second main surface 12 of the substrate 10 is a top surface.

The substrate processing unit 120 cuts the substrate 10 held by the substrate holding unit 110, for example. The substrate processing unit 120 includes, for example, a laser oscillator 121 and an optical system 122 that irradiates laser light from the laser oscillator 121 to the substrate 10. The optical system 122 is composed of a light collecting lens or the like that focuses laser light from the laser oscillator 121 on the substrate 10.

The moving mechanism portion 130 moves the substrate holding portion 110 and the substrate processing portion 120 relatively. The moving mechanism unit 130 is composed of, for example, an XYZθ stage that moves the substrate holding unit 110 in the X direction, the Y direction, the Z direction, and the θ direction.

The control device 90 controls the substrate processing section 120 and the moving mechanism section 130 to perform cutting of the substrate 10 along a dicing path that divides the substrate 10 into a plurality of wafers 13. As shown in FIG. 4, a modified layer as a starting point of fracture may be formed inside the substrate 10, and a laser processing groove may be formed on a laser irradiation surface (for example, a top surface in FIG. 4) of the substrate 10. The laser-processed groove may or may not penetrate the substrate 10 in the substrate thickness direction.

When a modified layer is formed inside the substrate 10, a laser ray that is transparent to the substrate 10 is used. On the other hand, when a laser-processed groove is formed on the laser irradiation surface of the substrate 10, a laser beam having absorption properties with respect to the substrate 10 is used.

In addition, the substrate processing unit 120 includes a laser oscillator that irradiates the substrate 10 with laser light in this embodiment. However, the substrate processing unit 120 may include a cutting blade for cutting the substrate 10 or a scribe line formed on the surface of the substrate 10. Grooved scriber.

In addition, although the cutting part 100 is arrange | positioned at the processing station 30 of the substrate processing system 1 in this embodiment, it may be provided outside the substrate processing system 1. At this time, after the substrate 10 is cut, it is carried in from the outside to the loading / unloading station 20.

<Thinning section> The thinning section 200 (see FIG. 1) processes the second main surface 12 on the opposite side of the first main surface 11 protected by the BG tape 41 of the cut substrate 10 to make the substrate 10 Thin. When the cutting starting point is formed by the dicing portion 100, the processing stress will act on the substrate 10 during the thinning process, whereby the crack will advance from the starting point to the thickness direction of the substrate, and the substrate 10 will be divided into multiple wafers 13. The thinned portion 200 includes, for example, as shown in FIG. 1, a rotary table 201, a chuck table 202 as a substrate adsorption section, a rough grinding section 210, a trimming grinding section 220, and a damaged layer removing section 230.

The turntable 201 rotates around the center line of the turntable 201. A plurality of (for example, four in FIG. 1) chuck tables 202 are arranged at equal intervals around the rotation center line of the rotation table 201.

The plurality of chuck tables 202 rotate together with the rotary table 201 about the center line of the rotary table 201. The center line of the turntable 201 is vertical. Each time the rotary table 201 rotates, the chuck table 202 facing the rough grinding section 210, the finishing grinding section 220, and the damaged layer removing section 230 is changed.

FIG. 5 is a view showing a rough grinding portion of a thin plate portion in the first embodiment. The rough grinding unit 210 performs rough grinding of the substrate 10. The rough grinding unit 210 includes, for example, a rotating vermiculite 211 as shown in FIG. 5. The rotating vermiculite 211 rotates and descends with its center line as the center, and processes the top surface of the substrate 10 (that is, the second main surface 12) held by the chuck table 202.

The chuck stage 202 sucks the substrate 10 through the BG tape 41. The substrate 10 may be kept horizontal. For example, the first main surface 11 of the substrate 10 protected by the BG tape 41 is a bottom surface, and the second main surface 12 of the substrate 10 is a top surface.

When viewed from a direction perpendicular to the suction surface (for example, the top surface in FIG. 5) of the chuck table 202, the outer periphery of the BG frame 49 is disposed outside the suction surface of the chuck table 202. The suction surface of the chuck stage 202 is covered with a BG tape 41 mounted on a BG frame 49 larger than the suction surface. With this, it is possible to suppress foreign matter such as grinding chips from adhering to the suction surface of the chuck table 202, save cleaning time to wash away the foreign matter, and save time to exchange the substrate 10.

The modification grinding unit 220 performs modification grinding of the substrate 10. The structure of the modified grinding unit 220 is substantially the same as that of the rough grinding unit 210. However, the average particle size of the particles of the rotating vermiculite of the modified grinding unit 220 is smaller than the average particle size of the particles of the rotating vermiculite of the rough grinding unit 210.

The damaged layer removing unit 230 removes a damaged layer formed on the second main surface 12 of the substrate 10 by grinding such as rough grinding or trimming. For example, the damaged layer removing unit 230 supplies a processing liquid to the substrate 10 and performs a wet etching process to remove the damaged layer. The method for removing the damaged layer is not particularly limited.

The thinning section 200 may include a polishing section for polishing the substrate 10. The structure of the polishing section is substantially the same as that of the rough grinding section 210. Examples of polishing of the substrate 10 include CMP (Chemical Mechanical Polishing). In addition, the thinned portion 200 may have a gettering portion that forms a gettering point (for example, crystal defect or distortion) that catches impurities. The number of the chuck stages 202 is four in FIG. 1, but it can be appropriately changed according to the number of types of processing. In addition, a plurality of types of processing (for example, removing a damaged layer and forming a gettering point) may be performed in a single processing section (for example, the damaged layer removing section 230).

<DAF adhesion part> FIG. 6 is a figure which shows the DAF adhesion part of 1st Embodiment. The DAF attaching section 300 attaches the DAF 15 to the second main surface 12 of the substrate 10 which has been thinned. For example, the DAF adhesion part 300 has a DAF application part 310 that applies a DAF application solution containing a DAF 15 material to the second main surface 12 of the thinned substrate 10. The DAF coating section 310 is configured by, for example, a nozzle or the like that discharges a coating liquid for DAF.

The DAF attachment section 300 includes a substrate holding section 311 that holds the substrate 10 through the BG tape 41 in addition to the DAF coating section 310. The substrate 10 may be kept horizontal. For example, the first main surface 11 of the substrate 10 protected by the BG tape 41 is a bottom surface, and the second main surface 12 of the substrate 10 is a top surface.

The DAF coating section 310 relatively moves the substrate holding section 311 and applies a DAF coating liquid to the second main surface 12 of the substrate 10 held by the substrate holding section 311. This coating method is not particularly limited, but examples thereof include a spin coating method, an ink jet method, and a screen printing method.

The DAF coating liquid contains, for example, a solvent such as an acrylic resin or an epoxy resin and a solvent that dissolves the resin, and is stored in a bottle or can. A flow regulating valve, a flow meter, or the like is provided at a halfway point of the pipe connecting the bottle and the DAF coating section 310.

The DAF coating liquid is applied to the second main surface 12 of the substrate 10 to form a liquid film. The liquid film was allowed to dry to form DAF15. When a coating liquid for DAF is used, the film thickness of DAF15 can be changed by changing the film thickness of the liquid film. In addition, the material of DAF15 can be easily changed by changing the bottle and can of DAF coating solution.

FIG. 7 is a diagram showing a DAF attachment section according to a modified example of the first embodiment. The DAF adhesion part 300 shown in FIG. 7 has a DAF adhesion part 320 for attaching a DAF 15 having a thin film shape in advance to the second main surface 12 of the thinned substrate 10. Since the DAF 15 is formed in a thin film shape in advance, the DAF 15 can be prevented from splashing around the substrate 10. The DAF bonding section 320 is composed of a stacking roller 321 and the like.

The film-shaped DAF15 is supplied in a state of being wound around the core, and is pulled out from the core and used. The DAF 15 passes between the stacking roller 321 and the substrate 10 while being wrapped around the stacking roller 321 by tension, and is stacked on the substrate 10. During this period, the substrate holding portion 322 holds the substrate 10 flat through the BG tape 41.

<DAF Divided Processing Section> FIG. 8 is a view showing a DAF divided processing section in the first embodiment. The DAF division processing unit 400 performs division processing of the DAF 15 along the boundary between the wafers 13. Here, the division processing of the DAF15 refers to the processing for dividing the DAF15, including the division of the DAF15, and the starting point for forming the division in the DAF15. The DAF split processing section 400 includes, for example, a substrate holding section 410, a DAF processing section 420, and a moving mechanism section 430.

The substrate holding portion 410 holds the substrate 10 through the BG tape 41. The substrate 10 may be kept horizontal. For example, the first main surface 11 of the substrate 10 protected by the BG tape 41 is the bottom surface, and the second main surface 12 of the substrate 10 attached to the DAF 15 is the top surface.

The DAF processing section 420 performs the division processing of the DAF 15 attached to the substrate 10 held by the substrate holding section 410. The DAF processing unit 420 includes, for example, a laser oscillator 421 and an optical system 422 that irradiates laser light from the laser oscillator 421 to the DAF 15. The optical system 422 is composed of a light collecting lens or the like that focuses the laser light from the laser oscillator 421 on the DAF 15.

The moving mechanism section 430 moves the substrate holding section 410 and the DAF processing section 420 relatively. The moving mechanism section 430 is composed of, for example, an XYZθ stage that moves the substrate holding section 410 in the X, Y, Z, and θ directions.

The control device 90 controls the DAF processing section 420 and the moving mechanism section 430 to execute the division processing of the DAF 15 along the boundary between the wafers 13. A metamorphic layer as a starting point of fracture may be formed inside the DAF 15, and a laser-processed groove may be formed on a laser irradiation surface (for example, a top surface in FIG. 8) of the DAF 15. Laser-processed grooves may or may not penetrate DAF15 in the film thickness direction.

When a deterioration layer is formed inside the DAF15, a laser ray that is transparent to the DAF15 is used. On the other hand, when a laser-processed groove is formed on the laser-irradiated surface of DAF15, a laser beam that is absorbent with respect to DAF15 is used.

In addition, the DAF processing section 420 includes a laser oscillator that irradiates laser light to the DAF15 in this embodiment. However, the DAF processing section 420 may have a cutter for cutting the DAF15, or a scribe groove formed on the surface of the DAF15. Scriber.

<Extending Section> FIG. 9 is a drawing showing the extending section of the first embodiment. The extension unit 510 increases the interval between the plurality of wafers 13 constituting the substrate 10 to which the DAF 15 is attached. By increasing the interval between the wafers 13, the problem of chipping during transportation or pick-up can be suppressed.

In addition, the substrate 10 may be transferred from the DAF attachment section 300 to the extension section 510 without passing through the DAF division processing section 400. The extension portion 510 can tear the DAF 15 along the boundary between the wafers 13 by increasing the interval between the wafers 13. In this case, the DAF division processing unit 400 is not necessary.

In this embodiment, before the extension unit 510 widens the interval between the wafers 13, the DAF division processing unit 400 performs the division processing of the DAF 15 along the boundary between the wafers 13. As a result, DAF15 with low tearability can be used, so the choice of resin types for DAF15 is wide.

The extension portion 510 includes, for example, a protective tape extension portion 511 that radially extends the BG tape 41 attached to the substrate 10 to increase the interval between the wafers 13. The protective tape extension portion 511 includes, for example, a protective tape frame holding portion 512, a protective tape pressing portion 513, and a protective tape pressing driving portion 514.

The protective tape frame holding portion 512 holds the BG frame 49. The BG frame 49 can be kept horizontal. An annular gap is formed between the BG frame 49 and the substrate 10 disposed inside the BG frame 49.

The protective tape pressing portion 513 presses the BG tape 41 bonded to the BG frame 49 and the substrate 10 between the inner periphery of the BG frame 49 and the outer periphery of the substrate 10. The protective tape pressing portion 513 is formed in a cylindrical shape, for example.

The protective tape presses the driving portion 514, and moves the protective tape frame holding portion 512 and the protective tape pressing portion 513 relatively. This moving direction is perpendicular to the main surface (for example, the first main surface 11) of the substrate 10, and is, for example, a vertical direction. The protective tape pressing driving portion 514 is composed of an air cylinder or the like.

The control device 90 controls the protective tape to press the driving portion 514 and press the BG tape 41 to extend the BG tape 41 radially. Thereby, the interval between the wafers 13 can be enlarged, and a gap can be formed between the wafers 13.

<Ultraviolet irradiation part> FIG. 10 is a figure which shows the ultraviolet irradiation part of 1st Embodiment. The ultraviolet irradiation unit 520 irradiates ultraviolet rays to the BG tape 41. In this case, the adhesive of the BG tape 41 can be hardened by the irradiation of ultraviolet rays, and the adhesive force of the BG tape 41 can be reduced. After the adhesion is reduced, the BG tape 41 can be easily peeled from the substrate 10 by a peeling operation.

As the ultraviolet irradiation section 520, a UV lamp or the like can be used. The ultraviolet irradiation by the ultraviolet irradiation unit 520 is performed when the adhesive force of the BG tape 41 is high, and is performed before the peeling operation of the BG tape 41.

The ultraviolet irradiation unit 520 may be provided on the opposite side of the substrate 10 with the BG tape 41 as a reference. If so, the deterioration of DAF15 caused by ultraviolet irradiation can be suppressed. The ultraviolet irradiation section 520 is provided inside the protective tape pressing section 513, for example.

The ultraviolet irradiation unit 520 may irradiate the BG tape 41 with ultraviolet rays after the BG tape 41 is extended. Since the substrate 10 is strongly and firmly adhered to the BG tape 41 when the BG tape 41 is extended, the interval between the wafers 13 can be surely enlarged by the extension of the BG tape 41.

<Mounting Section> FIG. 11 is a view showing a mounting section according to the first embodiment. The mounting portion 530 mounts the substrate 10 with the interval between the wafers 13 extended by the extension portion 510, and mounts the substrate 10 through the DAF 15 and the adhesive tape 51. The frame 59 is prepared separately from the BG frame 49.

The mounting portion 530 includes, for example, a frame holding portion 531 that holds the frame 59 and a bonding portion 532 that mounts the substrate 10 to the frame 59 held by the frame holding portion 531 through the adhesive tape 51 and the DAF 15. The frame holding portion 531 arranges the surface (for example, the top surface in FIG. 11) where the adhesive tape 51 is mounted on the frame 59 and the surface (for example, the top surface in FIG. 11) where the adhesive tape 51 is mounted on the frame 59. On the same plane. The bonding portion 532 is configured by, for example, a stacking roller.

The film-shaped adhesive tape 51 is supplied in a state wound around a core portion, and is pulled out from the core portion and used. The adhesive tape 51 passes between the stacking roller and the DAF 15 while being wrapped around the stacking roller by tension, and is stacked on the DAF 15. In addition, the adhesive tape 51 passes between the stacking roller and the frame 59 while being wrapped around the stacking roller by tension, and is stacked on the frame 59. As shown in FIG. 11, the mounting portion 530 sequentially attaches the adhesive tape 51 to the frame 59 and the DAF 15 from one end side to the other end side of the frame 59.

FIG. 12 is a view showing a mounting portion of a first modified example of the first embodiment. In FIG. 12, a solid line indicates a state before the adhesive tape 51 is attached to the DAF 15, and a two-point chain line indicates a state after the adhesive tape 51 is attached to the DAF 15.

In the mounting portion 530 according to the first embodiment, the adhesive tape 51 is sequentially bonded to the frame 59 and the DAF 15 from one end side to the other end side of the frame 59. On the other hand, the mounting portion 530 of the present modified example is an adhesive tape 51 previously mounted on the frame 59 and bonded in parallel with the DAF 15. Hereinafter, the differences will be mainly described.

The mounting portion 530 shown in FIG. 12 includes a frame holding portion 533 that holds the frame 59 and a bonding portion 534 that mounts the substrate 10 through the adhesive tape 51 and the DAF 15 with respect to the frame 59 held by the frame holding portion 533. The frame holding portion 533 holds the frame 59 through the adhesive tape 51. The frame holding portion 533 holds the frame 59 and the BG frame 49 in parallel. The bonding portion 534 is a member that makes the frame 59 and the BG frame 49 that are kept parallel to each other approach or separate from each other, and is formed of, for example, an air cylinder.

The adhesive tape 51 is attached to the frame 59 in advance. The frame 59 holds an outer peripheral portion of the adhesive tape 51. The frame 59 and the BG frame 49 approach each other while keeping parallel. Thereby, the adhesive tape 51 and DAF15 are bonded in parallel. In addition, in order to bring the frame 59 and the BG frame 49 closer to each other, the bonding portion 534 may move either one of the frame 59 and the BG frame 49, or may move both of them.

FIG. 13 is a view showing a mounting portion of a second modified example of the first embodiment. The mounting portion 530 of the first embodiment described above and the mounting portion 530 of the first variation thereof are provided on the frame 59 which is prepared separately from the BG frame 49 through the adhesive tape 51 and the DAF 15 to mount the substrate 10. In contrast, the mounting portion 530 of the present modified embodiment mounts the substrate 10 on the BG frame 49 through the adhesive tape 51 and the DAF 15. The adhesive tape 51 and the BG tape 41 are arranged so as to sandwich the BG frame 49.

The mounting portion 530 shown in FIG. 13 includes, for example, a frame holding portion 535 holding the BG frame 49 and a bonding portion on which the substrate 10 is mounted with the BG frame 49 held by the frame holding portion 535 through the adhesive tape 51 and the DAF 15 536. The frame holding portion 535 arranges the surface (for example, the top surface in FIG. 13) on which the adhesive tape 51 is mounted on the BG frame 49 and the surface (for example, the top surface in FIG. 13) on which the adhesive tape 51 is mounted. On the same plane. The bonding portion 536 is configured by, for example, a stacking roller.

The film-shaped adhesive tape 51 is supplied in a state wound around a core portion, and is pulled out from the core portion and used. The adhesive tape 51 passes between the stacking roller and the DAF 15 while being wrapped around the stacking roller by tension, and is stacked on the DAF 15. In addition, the adhesive tape 51 passes between the stacking roller and the BG frame 49 while being wrapped around the stacking roller by tension, and is stacked on the BG frame 49. As shown in FIG. 13, the mounting portion 530 causes the adhesive tape 51 to be sequentially bonded to the BG frame 49 and the DAF 15 from one end side to the other end side of the BG frame 49.

<Protective tape cutting part> FIG. 14 is a figure which shows the protective tape cutting part of 1st Embodiment. The protective tape cutting portion 610 cuts the extended BG tape 41 bonded to the BG frame 49 and the substrate 10 disposed inside the BG frame 49 between the inner periphery of the BG frame 49 and the outer periphery of the substrate 10. Off. The BG tape 41 is separated into a portion bonded to the BG frame 49 and a portion bonded to the substrate 10. Thereby, the restraint formed by the BG frame 49 on the BG tape 41 bonded to the substrate 10 is released. Therefore, the details will be described later, but as shown in FIG. 15, the BG tape 41 bonded to the substrate 10 can be peeled from the substrate 10 while being sequentially deformed from one end of the substrate 10 to the other end.

The protective tape cutting portion 610 includes, for example, a protective tape frame holding portion 611 that holds the BG frame 49 through the BG tape 41, a substrate holding portion 612 that holds the substrate 10 through the adhesive tape 51 and the DAF 15, and cuts the BG tape 41.的 剪 加工 部 613。 The cutting processing portion 613. As the cutting processing portion 613, a cutter for cutting the BG tape 41 is used in FIG. 14, but a laser oscillator that irradiates the BG tape 41 with laser light may be used.

The cutting of the BG tape 41 by the protective tape cutting section 610 is performed when the BG tape 41 is mounted on the BG frame 49. At this time, the conveying device 27 and the conveying device 33 can hold the BG frame 49 to convey the substrate 10, thereby improving the operability of the substrate 10.

<Protection tape peeling part> FIG. 15 is a figure which shows the protection tape peeling part of 1st Embodiment. The protective tape peeling portion peels off the BG tape 41 extended by the protective tape extension 511 from the substrate 10 bonded to the adhesive tape 51 by the mounting portion 530. If so, the BG tape 41 that is loosened by stretching can be removed. The protective tape peeling part 620 is comprised by the peeling roller 621, etc., for example.

The BG tape 41 passes between the peeling roller 621 and the substrate 10 while being wrapped around the peeling roller 621 by tension, and is peeled from the substrate 10. During this period, the substrate holding portion 622 holds the substrate 10 flat through the adhesive tape 51 and the DAF 15. The BG tape 41 peeled from the substrate 10 is rolled up in a rolled core portion (not shown).

As shown in FIG. 15, the protective tape peeling part 620 peels the BG tape 41 from the substrate 10 while sequentially deforming it from one end side to the other end side of the substrate 10. Thereby, the BG tape 41 can be smoothly peeled from the substrate 10.

In addition, the protective tape peeling portion 620 may peel the BG tape 41 parallel to the substrate 10. In this case, it is not necessary to cut the BG tape 41 by the protective tape cutting section 610.

<Substrate processing method> Next, the substrate processing method using the substrate processing system 1 of the said structure is demonstrated. FIG. 16 is a flowchart of a substrate processing method according to a first embodiment. The flowchart of the method for manufacturing a semiconductor device is the same as the flowchart of the substrate processing method, and therefore the drawings are omitted.

The substrate processing method shown in FIG. 16 includes a carrying-in step S101, a cutting step S102, a thinning step S103, a DAF attaching step S104, a DAF dividing processing step S105, an extension step S106, an ultraviolet irradiation step S107, an installation step S108, and protection. The tape cutting step S109, the protective tape peeling step S110, and the unloading step S111. These steps are performed under the control of the control device 90. The order of these steps is not limited to the order shown in FIG. 16.

In the carrying-in step S101, the transfer device 27 transfers the substrate 10 from the carrier C on the mounting table 21 to the transfer unit 35 of the processing station 30, and then the transfer device 33 transfers the substrate 10 from the transfer unit 35 to the cutting unit 100. When the substrate 10 is mounted on the BG frame 49 in advance through the BG tape 41, the conveying device 33 or the conveying device 27 holds the BG frame 49 to convey the substrate 10.

In the dicing step S102, as shown in FIG. 4, the dicing unit 100 performs dicing of the substrate 10 along a dicing path that divides the substrate 10 into a plurality of wafers 13. At this time, the first main surface 11 of the substrate 10 is protected by the BG tape 41.

In the thinning step S103, as shown in FIG. 5, the thinning portion 200 processes the second main surface 12 on the opposite side of the first main surface 11 of the substrate 10 protected by the BG tape 41 to make the substrate 10 thinner. At this time, the first main surface 11 of the substrate 10 is protected by the BG tape 41.

In the thinning step S103, the suction surface (for example, the top surface in FIG. 5) of the chuck stage 202 is covered with a BG tape 41 mounted on a BG frame 49 larger than the suction surface. With this, it is possible to suppress foreign matter such as grinding chips from adhering to the suction surface of the chuck table 202, save cleaning time to wash away the foreign matter, and save time to exchange the substrate 10.

In the DAF attaching step S104, as shown in FIG. 6, the DAF attaching section 300 attaches the DAF 15 to the second main surface 12 of the substrate 10 that has been thinned. For example, in the DAF attaching step S104, a coating liquid for DAF containing a material containing DAF 15 is applied to the second main surface 12 of the thinned substrate 10.

The DAF coating liquid is applied to the second main surface 12 of the substrate 10 to form a liquid film. The liquid film was allowed to dry to form DAF15. When a coating liquid for DAF is used, the film thickness of DAF15 can be changed by changing the film thickness of the liquid film. In addition, the material of DAF15 can be easily changed by changing the bottle and can of DAF coating solution.

In addition, in the DAF attaching step S104, as shown in FIG. 7, the DAF attaching section 300 may cause the DAF 15 formed in a thin film shape to be adhered to the second main surface 12 of the thinned substrate 10. Since the DAF 15 is formed in a thin film shape in advance, the DAF 15 can be prevented from splashing around the substrate 10.

In the DAF division processing step S105, as shown in FIG. 8, the DAF division processing unit 400 performs division processing on the DAF 15 along the boundary between the wafers 13.

In addition, instead of performing the DAF division processing step S105, the extension step S106 may be performed. In the extension step S106, by increasing the interval between the wafers 13, the DAF 15 can be torn along the boundary between the wafers 13.

In this embodiment, the DAF dividing processing step S105 is performed after the DAF attaching step S104 and before the extending step S106. Therefore, DAF15, which has a low tearing property, can be used, so the selection of resin types of DAF15 is wide.

In the extending step S106, as shown in FIG. 9, the extending portion 510 widens the interval between the plurality of wafers 13 constituting the substrate 10 to which the DAF is attached. By increasing the interval between the wafers 13, the problem of chipping during transportation or pick-up can be suppressed.

For example, in the extending step S106, the BG tape 41 bonded to the substrate 10 is radially extended to increase the interval between the wafers 13. In this case, the extended BG tape 41 can be used to maintain the gap between the wafers 13.

In the ultraviolet irradiation step S107, as shown in FIG. 10, the ultraviolet irradiation unit 520 irradiates the BG tape 41 with ultraviolet rays. If so, the adhesive of the BG tape 41 can be hardened by the irradiation of ultraviolet rays, and the adhesive force of the BG tape 41 can be reduced. Therefore, the BG tape 41 that is loosened by stretching can be easily removed from the substrate 10 in the protective tape peeling step S110 Peel off.

The ultraviolet irradiation step S107 may also be performed after the installation step S108, but in this embodiment, it is performed before the installation step S108. This can prevent deterioration of the adhesive tape 51 due to ultraviolet irradiation.

In the mounting step S108, as shown in FIG. 11, the mounting section 530 mounts the substrate 10 with the distance between the wafers 13 widened to the frame 59 through the DAF 15 and the adhesive tape 51. Since the adhesive tape 51 attached to the frame 59 is not slack, the gap between the wafers 13 can be maintained by the non-relaxed adhesive tape 51.

For example, in the mounting step S108, as shown in FIG. 11 or 12, the substrate 10 is mounted on the frame 59 prepared separately from the BG frame 49 through the adhesive tape 51 and the DAF 15. By using a frame 59 that is prepared separately from the BG frame 49, it is possible to prevent foreign matter such as grinding chips from adhering to the substrate 10.

In addition, in the mounting step S108, as shown in FIG. 13, the substrate 10 may be mounted on the BG frame 49 through the adhesive tape 51 and the DAF 15. This reduces the number of frames used and simplifies the retention structure of the frame. The surface of the BG frame 49 on which the adhesive tape 51 is mounted (for example, the top surface in FIG. 13) is sufficiently washed before the adhesive tape 51 is mounted.

In the protective tape cutting step S109, as shown in FIG. 14, the protective tape cutting section 610, between the inner periphery of the BG frame 49 and the outer periphery of the substrate 10, connects the BG frame 49 and the BG frame 49 and the The extended BG tape 41 bonded to the inner substrate 10 is cut. The BG tape 41 is separated into a portion bonded to the BG frame 49 and a portion bonded to the substrate 10. Thereby, the restraint formed by the BG frame 49 on the BG tape 41 bonded to the substrate 10 is released. Therefore, in the protective tape peeling step S110, the BG tape 41 bonded to the substrate 10 can be peeled from the substrate 10 while being sequentially deformed from one end of the substrate 10 to the other end.

In the protective tape peeling step S110, as shown in FIG. 15, the protective tape peeling section 620 peels the stretched BG tape 41 from the substrate 10. If so, the BG tape 41 that is loosened by stretching can be removed. As a result, as shown in FIG. 3, the substrate 10 is held by the frame 59 through the DAF 15 and the adhesive tape 51 in a state where the interval between the wafers 13 is widened.

In the protective tape peeling step S110, as shown in FIG. 15, the BG tape 41 is peeled from the substrate 10 while being sequentially deformed from one end side to the other end side of the substrate 10. Thereby, the BG tape 41 can be smoothly peeled from the substrate 10.

In addition, in the protective tape peeling step S110, the BG tape 41 may be peeled in parallel with the substrate 10. At this time, it is not necessary to cut the BG tape 41 in the protective tape cutting step S109.

In the unloading step S111, the transfer device 33 transfers the substrate 10 from the protective tape peeling section 620 to the transfer section 35, and then the transfer device 27 transfers the substrate 10 from the transfer section 35 to the carrier C on the mounting table 21. The carrying device 33 or the carrying device 27 holds the frame 59 to carry the substrate 10. The carrier C is carried out from the mounting table 21 to the outside. For the substrate 10 carried out to the outside, each wafer 13 is picked up one by one. In these ways, a semiconductor device including the wafer 13 and the DAF 15 can be manufactured.

The transfer device 33 or the transfer device 27 corresponds to a substrate transfer unit described in the patent claim. The substrate transfer unit holds the BG frame 49 on which the BG tape 41 is mounted, and transfers the substrate 10 bonded to the BG tape 41 inside the BG frame 49. The transfer device 27 transfers the substrate 10 between the carrier C placed on the mounting plate 22 and the transfer unit 35 of the processing station 30. The transfer device 33 transfers the substrate 10 between the processing sections adjacent to the transfer area 31. Since the BG frame 49 is held to carry the substrate 10 in these transportation steps, the operability of the substrate 10 can be improved.

[Second Embodiment] In the first embodiment described above, as the protective tape that protects the first main surface 11 of the substrate 10, a BG tape 41 is used. In contrast, in this embodiment, as the protective tape for protecting the first main surface 11 of the substrate 10, a BG tape 41 and a stretch tape 42 are used (see FIG. 18 and the like). The stretch tape 42 is disposed between the substrate 10 and the BG tape 41. The BG tape 41 is peeled from the stretch tape 42 after the substrate 10 is thinned and before the stretch tape 42 is extended. When the substrate 10 is thinned, both the BG tape 41 and the stretch tape 42 can be used to protect the substrate 10. On the other hand, when the extension tape 42 is extended, the BG tape 41 has been peeled off from the extension tape 42 first, and the restraint of the BG tape 41 on the extension tape 42 has been released, so the extension tape 42 can be easily extended, and then each wafer can be easily enlarged. The interval between 13. Hereinafter, the differences will be mainly described.

<Substrate Processing System> FIG. 17 is a plan view showing a substrate processing system according to a second embodiment. The substrate processing system 1A performs dicing of the substrate 10, thinning of the substrate 10, adhesion of the DAF to the substrate 10, enlargement of the interval between each wafer, mounting of the substrate 10, and the like. The substrate processing system 1A includes a loading / unloading station 20, a processing station 30A, and a control device 90.

The processing station 30A includes a transfer area 31, a transfer section 35, and various processing sections described later. The arrangement or number of processing units is not limited to the arrangement or number shown in FIG. 17, and can be arbitrarily selected. In addition, a plurality of processing units may be distributed or integrated in accordance with an arbitrary unit.

Hereinafter, the cutting section 100, the thinning section 200, the DAF attaching section 300, the DAF dividing processing section 400, the protective tape thinning section 700, and the extending section 510 disposed in the processing station 30A will be described in this order.

In addition, for the ultraviolet irradiation section 520, the mounting section 530, the protective tape cutting section 610, and the protective tape peeling section 620 disposed in the processing station 30A, in addition to the point of "processing the stretch tape 42 instead of the BG tape 41", Since it is the same as the first embodiment, the description is omitted.

<Cutting part> FIG. 18 is a figure which shows the cutting part of 2nd Embodiment. The dicing unit 100 performs dicing of the substrate 10. The first main surface 11 of the substrate 10 is protected by the stacked BG tape 41 and the stretch tape 42.

The stretch tape 42 is composed of a sheet-like substrate and an adhesive applied to the surface of the sheet-like substrate. The adhesive may be one which hardens when it is irradiated with ultraviolet rays and has reduced adhesion. After the adhesion is reduced, the stretch tape 42 can be easily peeled from the substrate 10 by a peeling operation.

The stretch tape 42 is disposed between the substrate 10 and the BG tape 41. The stretch tape 42 may be softer than the BG tape 41, and may be thinner than the BG tape 41.

The extension tape 42 is attached to the BG frame 49 so as to cover the opening portion of the ring-shaped BG frame 49, and is bonded to the substrate 10 at the opening portion of the BG frame 49. Thereby, the BG frame 49 can be held to carry the substrate 10, and the operability of the substrate 10 can be improved.

In addition, although the cutting part 100 is arrange | positioned at the processing station 30A of the substrate processing system 1A in this embodiment, it can also be provided outside the substrate processing system 1A. At this time, after the substrate 10 is cut, it is carried in from the outside to the loading / unloading station 20.

<Thinning part> FIG. 19 is a figure which shows the rough grinding part of the thinning part of 2nd Embodiment. The thinning section 200 processes the second main surface 12 of the cut substrate 10 to reduce the thickness of the substrate 10.

The first main surface 11 of the substrate 10 is protected by the stacked BG tape 41 and the stretch tape 42. The first main surface 11 of the substrate 10 can be protected more securely than in the case where only the softer stretchable tape 42 is used as the protective tape.

The BG tape 41 is harder than the stretch tape 42, so it is possible to suppress the stretch tape 42 from being deformed due to processing stress. Thereby, the substrate 10 can be processed with high accuracy.

<DAF adhesion part> FIG. 20 is a figure which shows the DAF adhesion part of 2nd Embodiment. The DAF attachment portion 300 shown in FIG. 20 allows the DAF 15 to be attached to the second main surface 12 of the substrate 10 which has been thinned. The DAF attachment section 300 includes a DAF coating section 310 and a substrate holding section 311.

The substrate holding portion 311 holds the substrate 10 through the BG tape 41 and the stretch tape 42. The first main surface 11 of the substrate 10 can be protected more securely than in the case where only the relatively soft stretch tape 42 is used as the protective tape.

In addition, the DAF adhesion part 300 may have the DAF adhesion part 320 shown in FIG. 7 instead of the DAF application part 310 shown in FIG. 20.

<DAF Divided Processing Section> FIG. 21 is a view showing a DAF divided processing section according to a second embodiment. The DAF division processing unit 400 performs division processing of the DAF 15 along the boundary between the wafers 13. The DAF split processing section 400 includes, for example, a substrate holding section 410, a DAF processing section 420, and a moving mechanism section 430.

The substrate holding portion 410 holds the substrate 10 through the BG tape 41 and the stretch tape 42. The first main surface 11 of the substrate 10 can be protected more securely than in the case where only the relatively soft stretch tape 42 is used as the protective tape.

The DAF processing section 420 includes a laser oscillator 421 that irradiates laser light to the DAF15 in this embodiment, but may also have a cutter for cutting the DAF15 or a scribe for forming a scribe groove on the surface of the DAF15. Line device.

<Protection tape thinning part> FIG. 22 is a figure which shows the protection tape thinning part of 2nd Embodiment. The protective tape thinning section 700 peels a part of the protective tape (for example, the BG tape 41) from the remaining protective tape (for example, the stretch tape 42). The protective tape thinning portion 700 is configured by, for example, a peeling roller 710 or the like.

The BG tape 41 passes between the peeling roller 710 and the substrate 10 while being wrapped around the peeling roller 710 by tension, and is peeled from the substrate 10. During this time, the substrate 10 and the stretch tape 42 remain flat. The BG tape 41 peeled from the substrate 10 is rolled up in a rolled core portion (not shown).

<Extending Section> FIG. 23 is a drawing showing an extending section of a second embodiment. The extension unit 510 increases the interval between the plurality of wafers 13 constituting the substrate 10 to which the DAF 15 is attached. By increasing the interval between the wafers 13, the problem of chipping during transportation or pick-up can be suppressed.

In addition, the substrate 10 may be transferred from the DAF attachment section 300 to the extension section 510 without passing through the DAF division processing section 400. The extension portion 510 can tear the DAF 15 along the boundary between the wafers 13 by increasing the interval between the wafers 13. In this case, the DAF division processing unit 400 is not necessary.

In this embodiment, before the extension section 510 widens the interval between the wafers 13, the DAF division processing section 400 performs the division processing of the DAF 15 along the boundary between the wafers 13. As a result, DAF15, which has low tearability, can be used, so the selection of resin types for DAF15 is wide.

The extension portion 510 includes, for example, a protective tape extension portion 511 that radially extends the extension tape 42 attached to the substrate 10 to increase the interval between the wafers 13.

In this aspect, before the protective tape extension 511 extends the extension tape 42, the protective tape thinning section 700 peels the BG tape 41 from the extension tape 42 to release the BG tape 41 from restraining the extension tape 42. Thereby, the extension tape 42 can be easily extended, and the interval between the wafers 13 can be easily enlarged.

The stretch tape 42 is softer than the BG tape 41 and thinner than the BG tape 41. Therefore, when the stretch tape 42 is stretched, the interval between the wafers 13 can be expanded more easily than when the BG tape 41 is stretched.

<Substrate processing method> Next, the substrate processing method using the substrate processing system 1A of the said structure is demonstrated. FIG. 24 is a flowchart of a substrate processing method according to a second embodiment. The flowchart of the method for manufacturing a semiconductor device is the same as the flowchart of the substrate processing method, and therefore the drawings are omitted.

The substrate processing method shown in FIG. 24 includes a loading step S101, a cutting step S102, a thinning step S103, a DAF attaching step S104, a DAF dividing processing step S105, a protective tape thinning step S201, an extension step S106, and an ultraviolet irradiation step. S107, installation step S108, protective tape cutting step S109, protective tape peeling step S110, and unloading step S111. These steps are performed under the control of the control device 90. The order of these steps is not limited to the order shown in FIG. 24.

In the carrying-in step S101, the transfer device 27 transfers the substrate 10 from the carrier C on the mounting table 21 to the transfer unit 35 of the processing station 30A, and then the transfer device 33 transfers the substrate 10 from the transfer unit 35 to the cutting unit 100. When the substrate 10 is mounted on the BG frame 49 in advance through the BG tape 41, the conveying device 33 or the conveying device 27 holds the BG frame 49 to convey the substrate 10.

In the dicing step S102, as shown in FIG. 18, the dicing unit 100 performs dicing of the substrate 10 along a dicing path that divides the substrate 10 into a plurality of wafers 13. At this time, the first main surface 11 of the substrate 10 is protected by a plurality of stacked protective tapes (BG tape 41 and extension tape 42).

The stretch tape 42 is disposed between the substrate 10 and the BG tape 41. The stretch tape 42 may be softer than the BG tape 41, and may be thinner than the BG tape 41.

The extension tape 42 is attached to the BG frame 49 so as to cover the opening portion of the ring-shaped BG frame 49, and is bonded to the substrate 10 at the opening portion of the BG frame 49. Thereby, the BG frame 49 can be held to carry the substrate 10, and the operability of the substrate 10 can be improved.

As the substrate conveyance unit that holds the BG frame 49 on which the stretch tape 42 is mounted, the substrate 10 that is bonded to the stretch tape 42 inside the BG frame 49 is conveyed, for example, using a conveyance device 27 and a conveyance device 33.

In the thinning step S103, as shown in FIG. 19, the thinning portion 200 processes the second main surface 12 of the cut substrate 10 to thin the substrate 10. The first main surface 11 of the substrate 10 is protected by the stacked BG tape 41 and the stretch tape 42. The thinned portion 200 includes a substrate adsorption portion (for example, a chuck stage 202) that adsorbs the substrate 10 through the BG tape 41 and the extension tape 42.

In the thinning step S103, the suction surface (for example, the top surface in FIG. 19) of the chuck stage 202 is covered with a BG tape 41 or the like mounted on the BG frame 49 larger than the suction surface. With this, it is possible to suppress foreign matter such as grinding chips from adhering to the suction surface of the chuck table 202, save cleaning time to wash away the foreign matter, and save time to exchange the substrate 10.

In the DAF attaching step S104, as shown in FIG. 20, the DAF attaching section 300 attaches the DAF 15 to the second main surface 12 of the substrate 10 which has been thinned. For example, in the DAF attaching step S104, a coating liquid for DAF containing a material containing DAF 15 is applied to the second main surface 12 of the thinned substrate 10.

The DAF coating liquid is applied to the second main surface 12 of the substrate 10 to form a liquid film. The liquid film was allowed to dry to form DAF15. When a coating liquid for DAF is used, the film thickness of DAF15 can be changed by changing the film thickness of the liquid film. In addition, the material of DAF15 can be easily changed by changing the bottle and can of DAF coating solution.

In addition, in the DAF attaching step S104, as shown in FIG. 7, the DAF attaching section 300 may cause the DAF 15 formed in a thin film shape to be adhered to the second main surface 12 of the thinned substrate 10. Since the DAF 15 is formed in a thin film shape in advance, the DAF 15 can be prevented from splashing around the substrate 10.

In the DAF division processing step S105, as shown in FIG. 21, the DAF division processing unit 400 performs division processing on the DAF 15 along the boundary between the wafers 13.

In addition, instead of performing the DAF division processing step S105, the extension step S106 may be performed. By extending the interval between the wafers 13 in the extension step S106, the DAF 15 can be torn along the boundary between the wafers 13.

In this embodiment, the DAF division processing step S105 is performed after the DAF attaching step S104 and before the extending step S106. As a result, DAF15, which has low tearability, can be used, so the selection of resin types for DAF15 is wide.

In the protective tape thinning step S201, as shown in FIG. 22, the protective tape thinning part 700 peels a part of the protective tape (for example, BG tape 41) from the remaining protective tape (for example, the extension tape 42).

In this aspect, the protective tape thinning step S201 is performed after the thinning step S103 and before the extending step S106. In the thinning step S103, the first main surface 11 of the substrate 10 can be protected by both the BG tape 41 and the stretch tape 42. On the other hand, in the extension step S106, the BG tape 41 is peeled from the extension tape 42 in advance, and the restriction of the BG tape 41 on the extension tape 42 is released. Therefore, the extension tape 42 can be easily extended, and the wafers 13 can be easily expanded. Interval.

The stretch tape 42 is softer than the BG tape 41 and thinner than the BG tape 41. Therefore, when the stretch tape 42 is stretched, the interval between the wafers 13 can be expanded more easily than when the BG tape 41 is stretched.

In the extending step S106, as shown in FIG. 23, the extending portion 510 widens the interval between the plurality of wafers 13 constituting the substrate 10 to which the DAF 15 is attached. By increasing the interval between the wafers 13, the problem of chipping during transportation or pick-up can be suppressed.

For example, in the extension step S106, the space between the wafers 13 is increased by radially extending the extension tape 42 attached to the substrate 10. In this case, the stretched adhesive tape 42 can be used to maintain a widened interval between the wafers 13.

In the ultraviolet irradiation step S107, similarly to FIG. 10 in the first embodiment, the ultraviolet irradiation unit 520 irradiates the extension tape 42 with ultraviolet rays. If so, the adhesive of the extension tape 42 can be hardened by the irradiation of ultraviolet rays, and the adhesive force of the extension tape 42 can be reduced. Therefore, the extension tape 42 that is loosened by extension can be simply removed from the substrate 10 in the protective tape peeling step S110. Peel off.

The ultraviolet irradiation step S107 may also be performed after the installation step S108, but in this embodiment, it is performed before the installation step S108. This can prevent deterioration of the adhesive tape 51 due to ultraviolet irradiation.

In the mounting step S108, as in the first embodiment shown in FIG. 11, the mounting section 530 mounts the substrate 10 with the distance between the wafers 13 extended to the frame 59 through the DAF 15 and the adhesive tape 51. Since the adhesive tape 51 attached to the frame 59 is not slack, the gap between the wafers 13 can be maintained by the non-relaxed adhesive tape 51.

For example, in the mounting step S108, the substrate 10 is mounted on the frame 59 prepared separately from the BG frame 49 through the adhesive tape 51 and the DAF 15 similarly to FIG. 11 or FIG. 12 in the first embodiment described above. By using a frame 59 that is prepared separately from the BG frame 49, it is possible to prevent foreign matter such as grinding chips from adhering to the substrate 10.

In addition, in the mounting step S108, the substrate 10 may be mounted on the BG frame 49 through the adhesive tape 51 and the DAF 15 in the same manner as in FIG. 13 of the first embodiment. This can reduce the number of frames used, thereby simplifying the holding structure of the frame. The surface of the BG frame 49 on which the adhesive tape 51 is mounted (for example, the top surface in FIG. 13) is sufficiently washed before the adhesive tape 51 is mounted.

In the protective tape cutting step S109, similarly to FIG. 14 of the first embodiment, the protective tape cutting section 610 cuts off between the inner periphery of the BG frame 49 and the outer periphery of the substrate 10 and the BG frame 49 and Both of the substrates 10 disposed inside the BG frame 49 are bonded to each other and are extended stretch tapes 42. The stretch tape 42 is separated into a portion to be bonded to the BG frame 49 and a portion to be bonded to the substrate 10. As a result, the restraint formed by the BG frame 49 on the stretch tape 42 attached to the substrate 10 is released. Therefore, in the protective tape peeling step S110, the stretch tape 42 bonded to the substrate 10 can be peeled from the substrate 10 while being sequentially deformed from one end to the other end of the substrate 10.

In the protective tape peeling step S110, similarly to FIG. 15 in the first embodiment, the protective tape peeling portion 620 peels the stretched stretched tape 42 from the substrate 10. If so, the stretch tape 42 which is loosened due to stretching can be removed. As a result, as shown in FIG. 3, the substrate 10 is held by the frame 59 through the DAF 15 and the adhesive tape 51 in a state where the interval between the wafers 13 is widened.

In the protective tape peeling step S110, the stretch tape 42 is peeled from the substrate 10 while being sequentially deformed from one end side to the other end side of the substrate 10. Thereby, the extension tape 42 and the board | substrate 10 can be peeled off smoothly.

In addition, in the protective tape peeling step S110, the stretch tape 42 may be peeled in parallel with the substrate 10. At this time, the protection tape cutting step S109 does not need to cut the stretch tape 42.

In the unloading step S111, the transfer device 33 transfers the substrate 10 from the protective tape peeling section 620 to the transfer section 35, and then the transfer device 27 transfers the substrate 10 from the transfer section 35 to the carrier C on the mounting table 21. The carrying device 33 or the carrying device 27 holds the frame 59 to carry the substrate 10. The carrier C is carried out from the mounting table 21 to the outside. For the substrate 10 carried out to the outside, each wafer 13 is picked up one by one. In these ways, a semiconductor device including the wafer 13 and the DAF 15 can be manufactured.

According to this embodiment, the substrate processing system 1A is different from the first embodiment described above. After the substrate 10 is thinned by the thinning section 200, a part of the protective tape (for example, BG tape) among a plurality of layers of protective tape is thinned. 41). Peel off the remaining protective tape (for example, stretch tape 42).

In addition, the number of layers of the protective tape used when the substrate 10 is thinned is two layers of the BG tape 41 and the extension tape 42 in this embodiment, but it may be three or more. In addition, the number of layers of the protective tape that is extended when the interval between the wafers 13 is enlarged is one layer of the extension tape 42 in this embodiment, but it may be two or more layers.

[Third Embodiment] In the first embodiment described above, the protective tape (for example, BG tape 41) that protects the substrate 10 when the thickness is reduced is made to extend radially to increase the interval between the wafers 13. In contrast, in the present embodiment, the adhesive tape 51 attached to the substrate 10 after the thinning is performed is extended radially to increase the interval between the wafers 13. The protective tape (for example, BG tape 41) that protects the substrate 10 during thinning is peeled from the substrate 10 before the adhesive tape 51 is extended. This makes it possible to use a hard-to-stretcher as a protective tape. Hereinafter, the differences will be mainly described.

<Substrate Processing System> FIG. 25 is a plan view showing a substrate processing system according to a third embodiment. The substrate processing system 1B performs dicing of the substrate 10, thinning of the substrate 10, adhesion of the DAF to the substrate 10, enlargement of the interval between each wafer, and mounting of the substrate 10. The substrate processing system 1B includes a loading / unloading station 20, a processing station 30B, and a control device 90.

The processing station 30B includes a transfer area 31, a transfer section 35, and various processing sections described later. The arrangement or number of processing units is not limited to the arrangement or number shown in FIG. 25, and can be arbitrarily selected. In addition, a plurality of processing units may be distributed or integrated in accordance with an arbitrary unit.

Hereinafter, the ultraviolet irradiation section 520B, the protective tape cutting section 610B, the DAF attachment section 300B, the protective tape peeling section 620B, the extension section 510B, the DAF cutting section 400B, and the mounting section 530B disposed in the processing station 30B are performed in this order. Instructions.

In addition, the cutting section 100 and the thinning section 200 disposed in the processing station 30B are the same as those in the first embodiment described above, and therefore description thereof is omitted.

<Ultraviolet irradiation part> FIG. 26 is a figure which shows the ultraviolet irradiation part of 3rd Embodiment. The ultraviolet irradiation unit 520 irradiates ultraviolet rays to the BG tape 41 bonded to the thinned substrate 10. In this case, the adhesive of the BG tape 41 can be hardened by the irradiation of ultraviolet rays, and the adhesive force of the BG tape 41 can be reduced. After the adhesion is reduced, the BG tape 41 can be easily peeled from the substrate 10 by a peeling operation.

As the ultraviolet irradiation section 520B, a UV lamp or the like can be used. The ultraviolet irradiation by the ultraviolet irradiation unit 520B is performed when the adhesive force of the BG tape 41 is high, and is performed before the peeling operation of the BG tape 41.

<Protective tape cutting part> FIG. 27 is a figure which shows the protective tape cutting part of 3rd Embodiment. The protective tape cutting portion 610B cuts the BG tape 41 attached to the BG frame 49 and the substrate 10 disposed inside the BG frame 49 between the inner periphery of the BG frame 49 and the outer periphery of the substrate 10. The BG tape 41 is separated into a portion bonded to the BG frame 49 and a portion bonded to the substrate 10. With this, the restraint formed by the BG frame 49 on the BG tape 41 bonded to the substrate 10 is released. Therefore, details will be described later, but as shown in FIG. 29, the BG tape 41 bonded to the substrate 10 can be peeled from the substrate 10 while being sequentially deformed from one end of the substrate 10 to the other end.

The protective tape cutting portion 610B includes, for example, a protective tape frame holding portion 611B that holds the BG frame 49, a substrate holding portion 612B that holds the substrate 10, and a cutting processing portion 613B that cuts the BG tape 41. The protective tape frame holding portion 611B holds the BG frame 49 through the BG tape 41. The substrate holding portion 612B holds the substrate 10 through the BG tape 41. As the cutting processing portion 613B, a cutting blade for cutting the BG tape 41 is used in FIG. 27, but a laser oscillator that irradiates the BG tape 41 with laser light may be used.

The cutting of the BG tape 41 by the protective tape cutting section 610B is performed when the BG tape 41 is mounted on the BG frame 49. At this time, the conveyance device 27 and the conveyance device 33 can hold the BG frame 49 to convey the substrate 10 and further improve the operability of the substrate 10.

<DAF adhesion part> FIG. 28 is a figure which shows the DAF adhesion part of 3rd Embodiment. In the DAF attachment portion 300B shown in FIG. 28, the DAF 15 is used to attach the adhesive tape 51 to the second main surface 12 of the thinned substrate 10. The adhesive tape 51 may be softer than the BG tape 41, and may be thinner than the BG tape 41.

The DAF attaching section 300B includes, for example, a DAF attaching section 320B in which a film-shaped DAF 15 and an adhesive tape 51 are attached to the second main surface 12 of the thinned substrate 10. DAF15 is formed in advance on the surface of the adhesive tape 51. The DAF bonding section 320B is composed of a stacking roller 321B or the like.

A multi-layer tape composed of DAF15 and an adhesive tape 51 is supplied in a state wound around a core, and is pulled out from the core and used. The multi-layered tape passes between the stacking roller 321B and the substrate 10 while being wrapped around the stacking roller 321B by tension, and is stacked on the substrate 10. During this period, the substrate holding portion 322B passes through the BG tape 41 and holds the substrate 10 flat.

In addition, the DAF attachment portion 300B may have a DAF application portion that applies a DAF coating solution containing a DAF 15 material to the second main surface 12 of the thinned substrate 10 similarly to the DAF attachment portion 300 shown in FIG. 6. . At this time, the DAF adhesion portion 300B further includes an adhesion tape adhesion portion that adheres the adhesion tape 51 to the DAF 15 after the DAF 15 is adhered. Since the adhesive tape bonding portion is configured in the same manner as the DAF bonding portion 320B, the drawings are omitted.

<Protection tape peeling part> FIG. 29 is a figure which shows the protection tape peeling part of 3rd Embodiment. The tape peeling portion 620B is protected, and the BG tape 41 is peeled from the substrate 10. When the interval between the plurality of wafers 13 constituting the substrate 10 is intended to be increased, the BG tape 41 can be prevented from becoming an obstacle. The protective tape peeling part 620B is comprised by the peeling roller 621B etc., for example.

The BG tape 41 passes between the peeling roller 621B and the substrate 10 while being wrapped around the peeling roller 621B by tension, and is peeled from the substrate 10. During this period, the substrate holding portion 622B holds the substrate 10 flat through the adhesive tape 51 and the DAF 15. The BG tape 41 peeled from the substrate 10 is rolled up in a rolled core portion (not shown).

As shown in FIG. 29, the protective tape peeling section 620B peels the BG tape 41 from the substrate 10 while sequentially deforming it from one end side to the other end side of the substrate 10. Thereby, the BG tape 41 can be smoothly peeled from the substrate 10.

In addition, the protective tape peeling portion 620B may peel the BG tape 41 parallel to the substrate 10. In this case, it is not necessary to cut the BG tape 41 by the protective tape cutting section 610B.

<Extended Section> FIG. 30 is a drawing showing an extended section of a third embodiment. The extension portion 510B increases the interval between the plurality of wafers 13 constituting the substrate 10 to which the DAF 15 is attached. By increasing the interval between the wafers 13, the problem of chipping during transportation or pick-up can be suppressed.

The extension portion 510B includes, for example, an adhesive tape extension portion 515B that radially extends the adhesive tape 51 attached to the substrate 10 through the DAF 15 to increase the interval between the wafers 13. The adhesive tape extension portion 515B includes, for example, an adhesive tape outer peripheral holding portion 516B, an adhesive tape pressing portion 517B, and an adhesive tape pressing driving portion 518B.

The adhesive tape outer-peripheral holding portion 516B holds the outer peripheral portion of the adhesive tape 51. The adhesive tape outer peripheral holding portion 516B is formed in a ring shape, for example. An annular gap is formed between the adhesive tape outer-peripheral holding portion 516B and the substrate 10 disposed inside the adhesive tape outer-peripheral holding portion 516B.

The adhesive tape pressing portion 517B presses the adhesive tape between the inner periphery of the adhesive tape outer periphery holding portion 516B and the outer periphery of the substrate 10 to which the adhesive tape 51 held by the adhesive tape outer periphery holding portion 516B is attached. 51. The adhesive tape pressing portion 517B is formed in a cylindrical shape, for example.

The adhesive tape presses the driving portion 518B, and moves the adhesive tape outer peripheral holding portion 516B and the adhesive tape pressing portion 517B relatively. This moving direction is perpendicular to the main surface (for example, the first main surface 11) of the substrate 10, and is, for example, a vertical direction. The adhesive tape pressing driving portion 518B is composed of an air cylinder or the like.

The control device 90 controls the adhesive tape pressing driving unit 518B to press the adhesive tape 51 to extend the adhesive tape 51 radially. Thereby, the interval between the wafers 13 can be enlarged, and a gap can be formed between the wafers 13.

The adhesive tape 51 is softer than the BG tape 41 and thinner than the BG tape 41. Therefore, when the adhesive tape 51 is extended, the interval between the wafers 13 can be more easily enlarged than when the BG tape 41 is extended.

<DAF cutting section> FIG. 31 is a view showing a DAF cutting section according to a third embodiment. The DAF cutting section 400B cuts the DAF 15 by increasing the gap between the wafers 13 formed by expanding the interval between the wafers 13 from the extension section 510B. The DAF cutting section 400B includes, for example, a DAF processing section 420B and a moving mechanism section 430B.

The DAF processing unit 420B includes, for example, a laser oscillator 421B, and an optical system 422B that irradiates laser light from the laser oscillator 421B to the DAF 15. The optical system 422B is composed of a light collecting lens or the like that focuses the laser light from the laser oscillator 421B on the DAF15.

The moving mechanism section 430B moves the extension section 510B and the DAF processing section 420B relatively. The moving mechanism section 430B is composed of, for example, an XYZθ stage that moves the extension section 510B in the X direction, the Y direction, the Z direction, and the θ direction.

The control device 90 controls the DAF processing section 420B and the moving mechanism section 430B, and cuts off the DAF 15 from the gap formed between the wafers 13 by the extension section 510B. The laser light passes through the gap between the wafers 13 and cuts the DAF 15.

In addition, the DAF processing section 420B includes a laser oscillator that irradiates laser light to the DAF 15 in this embodiment, but may also have a cutter for cutting the DAF 15. The cutter cuts the DAF 15 through the gap between the wafers 13.

In addition, regarding the cutting of the DAF 15, the interval between the wafers 13 may be enlarged by the extension portion 510B to tear the DAF 15 along the boundary between the wafers 13. In this case, the DAF cutting section 400B is unnecessary.

In this embodiment, the DAF cutting section 400B cuts the DAF 15 from a gap formed between the wafers 13 using the extension section 510B. As a result, DAF15, which has low tearability, can be used, so the selection of resin types for DAF15 is wide.

<Mounting Section> FIG. 32 is a view showing a mounting section according to a third embodiment. The mounting portion 530B mounts the substrate 10 with the distance between the wafers 13 extended to the frame 59 through the DAF 15 and the adhesive tape 51.

For example, the mounting portion 530B includes a frame holding portion 537B that holds a frame 59 that is prepared separately from the BG frame 49, and a frame 59 that mounts the substrate 10 through the adhesive tape 51 and the DAF 15 to the frame 59 held by the frame holding portion 537B. Laminating section 538B. The bonding portion 538B includes, for example, a flat holding portion 539B that holds the mounting portion 52 of the adhesive tape 51 mounted on the frame 59 flat, and a moving mechanism portion that relatively moves the flat holding portion 539B and the frame holding portion 537B. 540B.

The mounting portion 52 of the adhesive tape 51 mounted on the frame 59 is held flat by the flat holding portion 539B, and while approaching the frame 59 while being parallel to the frame 59, it is brought into contact with the frame 59. On the other hand, the remaining portion 53 of the adhesive tape 51 which is not attached to the frame 59 can be cut off with a cutter or the like. Since the adhesive tape 51 is mounted on the mounting portion 52 of the frame 59 and is not loosened, the interval between the wafers 13 can be maintained.

In addition, the mounting portion 530B may include a frame holding portion that holds the BG frame 49, and a bonding portion that mounts the substrate 10 through the adhesive tape 51 and the DAF 15 to the BG frame 49 held by the frame holding portion. This will reduce the number of frameworks used. The surface of the BG frame 49 on which the adhesive tape 51 is installed is sufficiently washed before the adhesive tape 51 is installed.

<Substrate Processing Method> Next, a substrate processing method using the substrate processing system 1B having the above-described structure will be described. FIG. 33 is a flowchart of a substrate processing method according to a third embodiment. The flowchart of the method for manufacturing a semiconductor device is the same as the flowchart of the substrate processing method, and therefore the drawings are omitted.

The substrate processing method shown in FIG. 33 includes a carrying-in step S101, a cutting step S102, a thinning step S103, an ultraviolet irradiation step S301, a protective tape cutting step S302, a DAF attachment step S303, a protective tape peeling step S304, and an extension step. S305, DAF cutting step S306, installation step S307, and unloading step S111. These steps are performed under the control of the control device 90. The order of these steps is not limited to the order shown in FIG. 33.

In the carrying-in step S101, the carrier device 27 transports the substrate 10 from the carrier C on the mounting table 21 to the transfer unit 35 of the processing station 30B, and then the carrier device 33 transports the substrate 10 from the transfer unit 35 to the cutting unit 100. When the substrate 10 is mounted on the BG frame 49 in advance through the BG tape 41, the conveying device 33 or the conveying device 27 holds the BG frame 49 to convey the substrate 10.

In the dicing step S102, as shown in FIG. 4, the dicing unit 100 performs dicing of the substrate 10 along a dicing path that divides the substrate 10 into a plurality of wafers 13. At this time, the first main surface 11 of the substrate 10 is protected by the BG tape 41.

In the thinning step S103, as shown in FIG. 5, the thinning portion 200 processes the second main surface 12 on the opposite side of the first main surface 11 protected by the BG tape 41 of the substrate 10 to make the substrate 10 Thin. At this time, the first main surface 11 of the substrate 10 is protected by the BG tape 41.

In the thinning step S103, the suction surface (for example, the top surface in FIG. 5) of the chuck stage 202 is covered with a BG tape 41 mounted on a BG frame 49 larger than the suction surface. With this, it is possible to suppress foreign matter such as grinding chips from adhering to the suction surface of the chuck table 202, save cleaning time to wash away the foreign matter, and save time to exchange the substrate 10.

In the ultraviolet irradiation step S301, as shown in FIG. 26, the ultraviolet irradiation unit 520B irradiates the BG tape 41 with ultraviolet rays. The adhesive of the BG tape 41 can be hardened by the irradiation of ultraviolet rays, and the adhesive force of the BG tape 41 can be reduced. If so, the BG tape 41 can be easily peeled from the substrate 10 in the protective tape peeling step S304.

The ultraviolet irradiation step S301 may be performed after the DAF attaching step S303, but in this embodiment, it is performed before the DAF attaching step S303. In this case, it is possible to prevent deterioration due to the ultraviolet curing reaction of the adhesive tape 51 that is adhered to the substrate 10 through the DAF 15 in the DAF attaching step S303.

In the protective tape cutting step S302, as shown in FIG. 27, the protective tape cutting section 610B cuts off the BG frame 49 and is disposed on the BG frame 49 between the inner periphery of the BG frame 49 and the outer periphery of the substrate 10. The BG tape 41 is bonded to both the inner substrates 10. The BG tape 41 is separated into a portion bonded to the BG frame 49 and a portion bonded to the substrate 10. As a result, the restraint formed by the BG frame 49 on the BG tape 41 bonded to the substrate 10 is released. Therefore, in the protective tape peeling step S304, the BG tape 41 bonded to the substrate 10 can be peeled from the substrate 10 while being sequentially deformed from one end of the substrate 10 to the other end.

The protective tape cutting step S302 is performed when the BG tape 41 is attached to the BG frame 49. At this time, the conveying device 27 and the conveying device 33 can hold the BG frame 49 to convey the substrate 10, thereby improving the operability of the substrate 10.

In the DAF attaching step S303, as shown in FIG. 28, an adhesive tape 51 is adhered to the second main surface 12 of the thinned substrate 10 through the DAF 15. The adhesive tape 51 may be softer than the BG tape 41, and may be thinner than the BG tape 41.

In the DAF attaching step S303, for example, the film-shaped DAF 15 and the adhesive tape 51 may be bonded to the second main surface 12 of the substrate 10 that has been thinned. DAF15 is formed in advance on the surface of the adhesive tape 51. Since the DAF 15 is formed in a thin film shape in advance, the DAF 15 can be prevented from splashing around the substrate 10.

In addition, in the DAF attaching step S303, as shown in FIG. 6, a coating liquid for DAF containing a material of DAF 15 may be applied to the second main surface 12 of the thinned substrate 10. The DAF coating liquid is applied to the second main surface 12 of the substrate 10 to form a liquid film. The liquid film was dried to form DAF15. When a coating liquid for DAF is used, the film thickness of DAF15 can be changed by changing the film thickness of the liquid film. In addition, the material of DAF15 can be easily changed by changing the bottle and can of DAF coating solution.

In the protective tape peeling step S304, as shown in FIG. 29, the protective tape peeling section 620B peels the BG tape 41 from the substrate 10. If so, the BG tape 41 can be prevented from becoming an obstacle in the extension step S305 in which the interval between the wafers 13 is increased.

The protective tape peeling step S304 is performed after the thinning step S103 and before the extending step S305. That is, a protective tape (for example, a BG tape 41) that protects the substrate 10 during thinning is peeled from the substrate 10 before the adhesive tape 51 is extended. Therefore, as the protective tape, a non-extendable one can be used.

In the protective tape peeling step S304, as shown in FIG. 29, the BG tape 41 is peeled from the substrate 10 while being sequentially deformed from one end side to the other end side of the substrate 10. If so, the BG tape 41 can be smoothly peeled from the substrate 10.

In addition, in the protective tape peeling step S304, the BG tape 41 may be peeled in parallel with the substrate 10. At this time, it is not necessary to cut the BG tape 41 in the protective tape cutting step S302.

In the extension step S305, as shown in FIG. 30, the extension portion 510B increases the interval between the plurality of individual wafers 13 constituting the substrate 10 to which the DAF 15 is attached. By increasing the interval between the wafers 13, the problem of chipping during transportation or pick-up can be suppressed.

For example, in the extension step S305, the adhesive tape 51 attached to the substrate 10 through the DAF 15 is radially extended to increase the interval between the wafers 13. In this case, the stretched adhesive tape 51 can be used to maintain the gap between the wafers 13.

The adhesive tape 51 is softer than the BG tape 41 and thinner than the BG tape 41. Therefore, when the adhesive tape 51 is extended, the interval between the wafers 13 can be more easily enlarged than when the BG tape 41 is extended.

In the DAF cutting step S306, as shown in FIG. 31, the DAF cutting section 400B cuts the DAF 15 from the gap between the wafers 13 formed by expanding the gap between the wafers 13 by the extension section 510B. As a result, DAF15, which has low tearability, can be used, so the selection of resin types for DAF15 is wide.

In addition, the DAF cutting step S306 may not be performed. At this time, by extending the interval between the wafers 13 in the extension step S305, the DAF 15 is torn along the boundary between the wafers 13.

In the mounting step S307, as shown in FIG. 32, the mounting section 530B mounts the substrate 10 with the distance between the wafers 13 enlarged to the frame 59 through the DAF 15 and the adhesive tape 51. For example, in the mounting step S307, the mounting portion 52 of the adhesive tape 51 attached to the frame 59 is kept flat, and at the same time, the adhesive tape 51 is attached to the frame 59. Since the adhesive tape 51 is mounted on the mounting portion 52 of the frame 59 and is not loosened, the interval between the wafers 13 can be maintained. On the other hand, the remaining portion 53 of the adhesive tape 51 which is not attached to the frame 59 can be cut off with a cutter or the like. As a result, as shown in FIG. 3, the substrate 10 is held by the frame 59 through the DAF 15 and the adhesive tape 51 in a state where the interval between the wafers 13 is widened.

In the unloading step S111, the transfer device 33 transfers the substrate 10 from the mounting portion 530B to the transfer portion 35, and then the transfer device 27 transfers the substrate 10 from the transfer portion 35 to the carrier C on the mounting table 21. The carrying device 33 or the carrying device 27 holds the frame 59 to carry the substrate 10. The carrier C is carried out from the mounting table 21 to the outside. For the substrate 10 carried out to the outside, each wafer 13 is picked up one by one. In these ways, a semiconductor device including the wafer 13 and the DAF 15 can be manufactured.

The carrying device 27 and the carrying device 33 can hold the BG frame 49 on which the BG tape 41 is mounted, and can carry the substrate 10 bonded to the BG tape 41 inside the BG frame 49. In these transfer steps, the BG frame 49 is held to transfer the substrate 10, so that the operability of the substrate 10 can be improved.

[Changes and Improvements] The foregoing description has been made of the implementation modes of the substrate processing system, the substrate processing method, and the manufacturing method of the semiconductor device. However, the present invention is not limited to the above-mentioned implementation modes and the like. Various changes and improvements can be made within the scope of the inventive spirit.

For example, regarding the above-mentioned embodiment, the following notes are disclosed. (Note 1) A substrate processing method including a thinning step of processing a second main surface on the opposite side of the first main surface protected by the protective tape of the cut substrate to make the substrate thin; A DAF attaching step that attaches a DAF (Die Attach Film) to the second main surface of the substrate thinned by the thinning step; and an extending step that constitutes the substrate of the substrate attached to the DAF The interval between the plurality of wafers is enlarged; and a mounting step, in which the substrate having the interval between the wafers enlarged by the extension step, is mounted on the frame through the DAF and the adhesive tape.

(Note 2) The substrate processing method described in Note 1, wherein, in the extending step, the protective tape attached to the substrate is extended to expand the interval between the wafers; and it further has: protection A tape peeling step, which peels the protective tape extended by the extending step from the substrate after the mounting step.

(Note 3) The substrate processing method according to Note 2, further comprising: a protective tape thinning step, which includes a plurality of layers of the protective tape after the thinning step and before the extension step. The protective tape is peeled from the remaining protective tape; and in the extending step, the remaining protective tape adhered to the substrate is extended to expand the gap between the wafers.

(Note 4) The substrate processing method described in Note 2 or 3, further comprising: a DAF division processing step, which is followed by the division between the wafers after the DAF attachment step and before the extension step. The boundary line performs division processing on the DAF.

(Note 5) The substrate processing method according to Note 1, wherein in the DAF attaching step, the DAF is used to attach the adhesive tape to the first main surface of the substrate; and further includes: a protective tape peeling step After the DAF attaching step and before the extending step, the protective tape is peeled off from the substrate attached through the DAF and the adhesive tape; in the extending step, the substrate attached through the DAF and the substrate is peeled off. The adhesive tape extends to enlarge the gap between the wafers.

(Note 6) The substrate processing method described in Note 5, further comprising: a DAF cutting step, which expands the gap between the wafers formed by the gap between the wafers from the extension step, and The DAF is switched off.

(Note 7) The substrate processing method according to Note 5 or 6, further comprising: a protective tape cutting step, after the thinning step, and before the protective tape peeling step, in the protective tape frame Between the inner periphery of the substrate and the outer periphery of the substrate, the protective tape adhered to both the frame for the protective tape and the substrate disposed inside the frame for the protective tape is cut.

(Note 8) The substrate processing method according to any one of notes 1 to 7, wherein in the DAF attaching step, the second main surface of the substrate thinned by the thinning step is coated with the second main surface. DAF coating solution for DAF material.

(Note 9) The substrate processing method according to any one of notes 1 to 7, wherein, in the DAF attaching step, the DAF formed in a thin film shape is attached to the DAF thinned in the thinning step. The second main surface of the substrate.

(Note 10) The substrate processing method according to any one of notes 1 to 9, further including a transporting step for holding the protective tape frame on which the protective tape is mounted to carry the protective tape frame. The substrate on which the inner side of the substrate is bonded to the protective tape.

(Note 11) The substrate processing method according to Note 10, wherein in the thinning step, the protective tape installed on the protective tape frame larger than the suction surface is covered with the protective tape. An adsorption surface of a substrate adsorption portion of the substrate.

(Note 12) The substrate processing method according to Note 10 or 11, wherein, in the mounting step, the frame prepared separately from the frame for the protective tape is installed through the adhesive tape and the DAF. Substrate.

(Note 13) The substrate processing method according to Note 10 or 11, wherein in the mounting step, the substrate is mounted on the protective tape frame through the adhesive tape and the DAF.

(Note 14) A method for manufacturing a semiconductor device includes a thinning step of processing a second main surface on the opposite side of the first main surface protected by the protective tape of the cut substrate to make the substrate thin DAF attachment step, which attaches DAF (Die Attach Film) to the second main surface of the substrate thinned by the thinning step; and an extension step, which constitutes the attachment of the DAF The interval between the plurality of wafers of the substrate is enlarged; and a mounting step, in which the substrate by which the interval between the wafers is enlarged by the extension step, is mounted on the frame through the DAF and the adhesive tape.

1, 1A, 1B ‧‧‧ substrate processing system

10‧‧‧ substrate

11‧‧‧ 1st major surface

12‧‧‧ 2nd major surface

13‧‧‧Chip

15‧‧‧DAF (wafer attachment film)

20‧‧‧ moved in and out

21‧‧‧mounting table

22‧‧‧mounting plate

25‧‧‧Transportation area

26‧‧‧Transportation path

27‧‧‧handling device

30, 30A, 30B ‧‧‧ Processing Station

31‧‧‧handling area

32‧‧‧Transportation path

33‧‧‧handling device

35‧‧‧Transfer Department

41‧‧‧BG tape (protective tape)

42‧‧‧Stretch tape (protective tape)

49‧‧‧BG frame (frame for protective tape)

51‧‧‧adhesive tape

52‧‧‧Installation section

53‧‧‧ remainder

59‧‧‧Frame

90‧‧‧control device

91‧‧‧CPU (Central Processing Unit)

92‧‧‧Memory Media

93‧‧‧Input interface

94‧‧‧ output interface

100‧‧‧cutting department

110‧‧‧ substrate holding section

120‧‧‧Substrate Processing Department

121‧‧‧laser oscillator

122‧‧‧ Optical System

130‧‧‧Mobile agency

200‧‧‧ Thinning Department

201‧‧‧Turntable

202‧‧‧Chuck Table

210‧‧‧Rough grinding department

211‧‧‧Rotating Vermiculite

220‧‧‧ Grooming Research Department

230‧‧‧ Damage layer removal section

300, 300B‧‧‧DAF attachment

310‧‧‧DAF Coating Department

311‧‧‧ substrate holding section

320, 320B‧‧‧DAF Laminating Department

321, 321B‧‧‧stacking roller

322, 322B‧‧‧ substrate holding unit

400B‧‧‧DAF cutting section

400‧‧‧DAF Split Processing Department

410‧‧‧ substrate holding section

420, 420B‧‧‧DAF Processing Department

421, 421B‧‧‧laser oscillator

422, 422B‧‧‧Optical System

430, 430B ‧‧‧ Mobile Mechanism Department

510, 510B‧‧‧Extended Department

511‧‧‧Protection tape extension

512‧‧‧Frame holding section for protective tape

513‧‧‧Protective tape pressing part

514‧‧‧Protective tape pushes the drive

515B‧‧‧Adhesive tape extension

516B‧‧‧ Adhesive tape peripheral holding part

517B‧‧‧Adhesive tape pressing part

518B‧‧‧ Adhesive tape pushes the drive

520B‧‧‧Ultraviolet irradiation section

520‧‧‧UV irradiation section

530, 530B‧‧‧Mounting Department

531, 533, 535, 537B ‧‧‧Frame holding department

532, 534, 536, 538B ‧‧‧ Laminating section

539B‧‧‧Flat holding section

540B‧‧‧Mobile agency

610, 610B‧‧‧‧Protective tape cutting section

611, 611B‧‧‧Frame holding section for protective tape

612, 612B‧‧‧ substrate holding section

613, 613B‧‧‧cut-off processing department

620, 620B‧‧‧‧Protective tape peeling section

621, 621B‧‧‧ peeling roller

622, 622B‧‧‧ substrate holding unit

700‧‧‧Thinning Protection Tape

710‧‧‧ peeling roller

C‧‧‧ carrier

S101 ～ S111, S201, S301 ～ S307‧‧‧ steps

X, Y, Z‧‧‧ directions

[Fig. 1] A plan view showing a substrate processing system according to a first embodiment. [FIG. 2] A perspective view showing a substrate before processing by the substrate processing system according to the first embodiment. 3 is a perspective view showing a substrate processed by the substrate processing system according to the first embodiment. [FIG. 4] It is a figure which shows the cutting part of 1st Embodiment. [FIG. 5] It is a figure which shows the rough grinding part of the thin-plate part of 1st Embodiment. [FIG. 6] A diagram showing a DAF attachment portion according to a first embodiment. [FIG. 7] A diagram showing a DAF attachment portion of a modified example of the first embodiment. [Fig. 8] Fig. 8 is a diagram showing a DAF division processing section in a first embodiment. [FIG. 9] It is a figure which shows the extension part of 1st aspect. [Fig. 10] Fig. 10 is a view showing an ultraviolet irradiation portion according to a first embodiment. [FIG. 11] It is a figure which shows the attachment part of 1st Embodiment. 12 is a view showing a mounting portion of a first modified example of the first embodiment. 13 is a view showing a mounting portion of a second modified example of the first embodiment. [Fig. 14] Fig. 14 is a view showing a protective tape cutting portion according to a first embodiment. [FIG. 15] It is a figure which shows the peeling part of the protective tape of 1st Embodiment. [FIG. 16] A flowchart of a substrate processing method according to the first embodiment. 17 is a plan view showing a substrate processing system according to a second embodiment. [FIG. 18] It is a figure which shows the cutting part of 2nd Embodiment. [FIG. 19] It is a figure which shows the rough grinding part of the thin-plate part of 2nd Embodiment. [FIG. 20] A diagram showing a DAF attachment portion according to a second embodiment. [FIG. 21] It is a figure which shows the DAF division processing part of 2nd Embodiment. 22 is a view showing a thinned portion of a protective tape according to a second embodiment. [FIG. 23] It is a figure which shows the extension part of 2nd Embodiment. [FIG. 24] A flowchart of a substrate processing method according to a second embodiment. [FIG. 25] A plan view showing a substrate processing system according to a third embodiment. [Fig. 26] Fig. 26 is a diagram showing an ultraviolet irradiation portion according to a third embodiment. [FIG. 27] It is a figure which shows the protection tape cutting part which concerns on 3rd Embodiment. [Fig. 28] Fig. 28 is a diagram showing a DAF attachment portion according to a third embodiment. [FIG. 29] It is a figure which shows the peeling part of the protective tape by 3rd Embodiment. [FIG. 30] It is a figure which shows the extension part of 3rd Embodiment. [FIG. 31] A diagram showing a DAF cutting section according to a third embodiment. [FIG. 32] It is a figure which shows the attachment part of 3rd Embodiment. [Fig. 33] A flowchart of a substrate processing method according to a third embodiment.

Claims (14)

A substrate processing system comprising: a thinning section that processes a second main surface on the opposite side of the first main surface protected by the protective tape of the cut substrate to make the substrate thin; a DAF attachment section, It causes a DAF (Die Attach Film) to be attached to the second main surface of the substrate thinned by the thinned portion; an extension portion that constitutes a plurality of wafers that are connected to the substrate to which the DAF is attached The space between them is enlarged; and a mounting portion that mounts the substrate on which the space between the wafers is enlarged by the extension portion is mounted on the frame through the DAF and the adhesive tape. For example, the substrate processing system of claim 1 in the patent scope, wherein the extension portion includes: a protective tape extension portion that extends the protective tape bonded to the substrate to expand the interval between the wafers; : A protective tape peeling section that peels off the protective tape extended by the protective tape extension from the substrate bonded to the adhesive tape by the mounting section. For example, the substrate processing system according to the scope of patent application No. 2 further includes: a protective tape thinning section that, after the thinning section thins the substrate, a plurality of layers of the protective tape of the protective tape Peeling from the remaining protective tape; the protective tape extension extends the remaining protective tape bonded to the substrate to extend the gap between the wafers. For example, the substrate processing system for item 2 or 3 of the patent application scope further includes: a DAF split processing section, which uses the protective tape extension to extend the protective tape along the boundary line between the wafers. DAF performs split processing. For example, the substrate processing system of the scope of application for a patent, wherein the DAF attachment section allows the adhesive tape to be attached to the second main surface of the substrate thinned by the thinned section through the DAF; further including: protection A tape peeling section peels off the protective tape from the substrate through which the DAF is attached to the adhesive tape before expanding the gap between the wafers by the extension section; the extension section includes: an adhesive tape The extension portion extends the adhesive tape attached to the substrate through the DAF to expand the interval between the wafers. For example, the substrate processing system according to the scope of patent application No. 5 further includes: a DAF cutting section, which is formed between the wafers by expanding the interval between the wafers by the adhesive tape extension Gap, the DAF is cut. For example, the substrate processing system of claim 5 or 6, further includes a protective tape cutting section that cuts and protects the frame for the protective tape between the inner periphery of the protective tape frame and the outer periphery of the substrate. And the protective tape attached to both the substrates disposed inside the protective tape frame. For example, the substrate processing system of any one of claims 1 to 3, 5, and 6, wherein the DAF attachment section includes a DAF coating section for the first section of the substrate thinned by the thin section. (2) The main surface is coated with a DAF coating solution containing the DAF material. For example, the substrate processing system of any one of claims 1 to 3, 5, and 6 of the patent application scope, wherein the DAF attachment section includes a DAF bonding section, which allows the DAF formed in a thin film shape to be bonded to the The second main surface of the substrate is thinned by the thinned portion. For example, the substrate processing system of any one of claims 1 to 3, 5, and 6 further includes: a substrate transporting section that holds a protective tape frame on which the protective tape is installed to carry the protective tape. The substrate on which the inner side of the frame for tape is bonded to the protective tape. For example, the substrate processing system of claim 10, wherein the thinned portion includes: a substrate adsorption portion that adsorbs the substrate through the protective tape; an adsorption surface of the substrate adsorption portion is installed more than the adsorption surface The protective tape is covered with the protective tape of the frame. For example, the substrate processing system of claim 10, wherein the mounting portion includes: a frame holding portion that holds a frame prepared separately from the protective tape frame; and a bonding portion that holds the frame holding portion. The retained frame mounts the substrate through the adhesive tape and the DAF. For example, the substrate processing system of claim 10, wherein the mounting portion includes: a frame holding portion that holds the protective tape frame; and a bonding portion that holds the protective tape frame held by the frame holding portion. The substrate is mounted through the adhesive tape and the DAF. A substrate processing method, comprising: a thinning step of processing a second main surface on the opposite side of the first main surface protected by the protective tape of the cut substrate to thin the substrate; a DAF attaching step, It causes DAF (Die Attach Film) to be attached to the second main surface of the substrate thinned by the thinning step; and an extension step which will constitute a plurality of wafers of the substrate attached to the DAF. The space between the wafers is enlarged; and a mounting step, in which the substrate in which the space between the wafers is enlarged by the extension step, is mounted on the frame through the DAF and the adhesive tape.