TW201920726A - Wafer processing deposition shielding components - Google Patents

Abstract

Embodiments described herein generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator for mechanical and electrical coupling with a shield member positioned between a sputtering target and a substrate support pedestal is provided. The collimator comprises a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough and where the apertures located in the central region have a higher aspect ratio than the apertures located in the peripheral region.

Description

Wafer processing deposition shield

Embodiments of the present invention generally relate to a device and method for uniformly sputter-depositing a material onto a base and a sidewall of a feature structure having a high aspect ratio on a substrate.

In the manufacture of integrated circuits, sputtering or physical vapor deposition (PVD) is a technique widely used to deposit thin metal layers on substrates. PVD is used to deposit layers as a diffusion barrier layer, a seed layer, a primary conductor, an anti-reflective coating, and an etch stop layer. However, it is difficult to form a uniform thin film that retains the shape of a substrate in which steps such as forming a via hole or a trench occur in the substrate. In particular, the wide-angle distribution of deposited sputtering atoms results in poor coverage in the bottom and sidewalls (such as vias and trenches) of structures with high aspect ratio features.

Collimator sputtering technology was developed to allow the use of PVD to deposit thin films in the bottom with high aspect ratio features. A collimator is a filter plate positioned between a sputtering source and a substrate. Collimators usually have a uniform thickness and include channels formed through the thickness. The sputtering material must pass from the sputtering source on its path through the collimator to the substrate. The collimator filters out material that will impact the work piece at an acute angle that exceeds the desired angle.

The actual amount filtered by a given collimator depends on the aspect ratio of the channel that passes through the collimator. As a result, particles traveling along a path approximately perpendicular to the substrate pass through the collimator and are deposited on the substrate. This improves coverage in characteristic structures with high aspect ratios at the bottom.

However, the use of conventional collimators with small magnet magnetrons will present some problems. The use of a small magnet magnetron will produce a high ionized metal flux, which is beneficial for filling feature structures with high aspect ratios. Unfortunately, PVDs with conventional collimators incorporating small magnet magnetrons provide uneven deposition across the substrate. The source material may deposit a thicker layer in one area of the substrate than other areas on the substrate. For example, depending on the radial positioning of the small magnets, a thicker layer may be deposited at the center or edge of the substrate. This phenomenon not only causes non-uniform deposition across the substrate, but also causes non-uniform deposition across the sidewall of the feature structure with a high aspect ratio in some areas of the substrate. For example, small magnets positioned radially to provide the best magnetic field uniformity in the region near the periphery of the substrate cause the source material to be deposited on the side wall of the feature structure facing the center of the substrate in a ratio The feature structure on the peripheral edge of the substrate is larger on the sidewall.

Therefore, there is a need to improve the uniformity of the source material deposited across the substrate by PVD technology.

A deposition apparatus according to an embodiment described herein includes: an electrically grounded chamber; a sputtering target supported by the chamber and electrically insulated from the chamber; a substrate support seat positioned at the Below the sputtering target and having a substrate supporting surface substantially parallel to the sputtering surface of the sputtering target; a shielding member supported by the chamber and electrically coupled to the chamber; and a collimator A device mechanically and electrically coupled to the shielding member and positioned between the sputtering target and the substrate support. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the aperture in the central region has a higher aspect ratio than the aperture in the peripheral region.

In another embodiment, a deposition apparatus includes: an electrically grounded chamber; a sputtering target supported by the chamber and electrically insulated from the chamber; a substrate support seat positioned at the sputtering Below the shooting target and having a substrate supporting surface substantially parallel to the sputtering surface of the sputtering target; a shielding member supported by the chamber and electrically coupled to the chamber; a collimator, It is mechanically and electrically coupled to the shielding member and positioned between the sputtering target and the substrate support; a gas source; and a controller. In one embodiment, the sputtering target is electrically coupled to a DC power source. In one embodiment, the substrate support is electrically coupled to the RF power source. In one embodiment, the controller is programmed to provide signals to control the gas source, the DC power source, and the RF power source. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the aperture in the central region has a higher aspect ratio than the aperture in the peripheral region of the collimator. In one embodiment, the controller is programmed to provide high bias to the substrate support.

In yet another embodiment, a method for depositing a material onto a substrate includes the steps of: placing a sputtering target in a chamber having a collimator between the sputtering target and a substrate support seat; Applying a DC bias to a material; providing a process gas in an area adjacent to a sputtering target in a chamber; applying a bias to a substrate support; and applying a pulse to the substrate between high and low bias The bias of the support. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the aperture in the central region has a higher aspect ratio than the aperture in the peripheral region of the collimator.

In yet another embodiment, a collimator for mechanically and electrically coupling a shielding member positioned between a sputtering target and a substrate support is provided. The collimator includes a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough, and wherein the aperture in the central region has a higher aspect ratio than the aperture in the peripheral region.

In yet another embodiment, a lower shield is provided for surrounding a substrate support seat facing a target in a process chamber. The lower shield includes a cylindrical outer band having a first diameter adjusted to surround the sputtering surface of the sputtering target and a first diameter of the substrate support, and the outer cylindrical band includes a ring surrounding the sputtering target. An upper portion of the sputtering surface; a middle portion; and a lower portion that surrounds the substrate support; a support flange having a support surface and extending radially outward from a cylindrical outer band; a base plate from A lower portion of the cylindrical outer band extends radially inwardly; and a cylindrical inner band, the cylindrical inner band is coupled to the base plate and partially surrounds a flange of the base support.

In yet another embodiment, an upper shield for a sputtering target surrounding a support base in a substrate processing chamber is provided. The upper shield includes a shield portion and an integrated flux optimizer for directional sputtering.

The embodiments described herein provide an apparatus and method for uniformly depositing sputtered material across a high aspect ratio feature of a substrate during fabrication of an integrated circuit on the substrate.

FIG. 1 depicts an exemplary embodiment of a process chamber 100 having an embodiment of a process kit 140 capable of processing a substrate 154. The process kit 140 includes a one-piece lower shield 180, a one-piece upper shield 186, and a collimator 110. In the illustrated embodiment, the process chamber 100 includes a sputtering chamber capable of depositing, for example, titanium, aluminum oxide, aluminum, copper, tantalum, tantalum nitride, tungsten, or tungsten nitride on a substrate. It is called a physical vapor deposition (PVD) chamber. Examples of suitable PVD chambers include ALPS® Plus and SIP ENCORE® PVD process chambers, both available from Santa Clara Applied Materials, California. It should be understood that process chambers from other manufacturers may also be utilized to implement the embodiments described herein.

The chamber 100 includes a sputtering source, such as a target 142 having a sputtering surface 145, and a substrate support 152 having a peripheral edge 153. The substrate support 152 is used to receive a semiconductor substrate 154 thereon. . The substrate supporting seat can be located in a grounded cavity wall 150.

In one embodiment, the chamber 100 includes a target 142 supported by a grounded conductive adapter 144 via a dielectric isolator 146. The target 142 includes material to be deposited on the surface of the substrate 154 during sputtering and includes copper deposited as a crystalline layer in a high aspect ratio feature structure formed in the substrate 154. In an embodiment, the target material 142 may also include a bonding composition of a metal surface layer of a sputterable material (such as copper), and a back layer (such as aluminum) of a structural material.

In an embodiment, the base 152 supports a substrate 154 to be sputter-coated, wherein the substrate 154 has a characteristic structure with a high aspect ratio, and the bottom thereof is flat with respect to the main surface of the target 142. The substrate support 152 has a planar substrate receiving surface that is generally parallel to the sputtering surface of the target 142. The seat 152 may be moved vertically through a bellows 158, which is connected to the bottom chamber wall 160 to allow the substrate to be passed through a load lock valve (not shown) in the lower portion of the chamber 100 Conveyed to the seat 152. The seat 152 may then be raised to a deposition position as shown.

In one embodiment, the process gas may be supplied into the lower portion of the chamber 100 from the gas source 162 via the mass flow controller 164. In an embodiment, a controllable direct current (DC) power source 148 coupled to the chamber 100 may be used to apply a negative voltage or bias to the target 142. A radio frequency (RF) power source 156 may be coupled to the mount 152 to induce a DC self-bias on the substrate 154. In one embodiment, the mount 152 is grounded. In one embodiment, the mount 152 is electrically floating.

In one embodiment, the magnetron 170 is positioned above the target 142. The magnetron 170 may include a plurality of magnets 172 supported by a base plate 174 connected to a shaft 176 that may be axially aligned with the central axis of the chamber 100 and the substrate 154. In one embodiment, the magnets are arranged in a kidney-shaped pattern. The magnet 172 generates a magnetic field in the chamber 100 near the front surface of the target material 142 to generate a plasma, so that a large amount of ion current hits the target material 142, causing the target material to sputter out. The magnet 172 can be rotated around the shaft 176 to increase the uniformity of the magnetic field across the surface of the target 142. In one embodiment, the magnetron 170 is a small magnet magnetron. In one embodiment, the magnets 172 can rotate and move with each other in a linear direction substantially parallel to the target surface to generate a spiral motion. In one embodiment, the magnet 172 can rotate around a central axis and an independently controlled second axis to control its radial position and angular position.

In one embodiment, the chamber 100 includes a lower ground shield 180 having a support flange 182 supported by the chamber side wall 150 and coupled to the chamber side wall 150. The upper shield 186 is supported and coupled to the flange 184 of the adapter 144 by the flange 184 of the adapter 144. The upper shield 186 and the lower shield 180 are coupled in an electrical coupling manner such as the adapter 144 and the chamber wall 150. In one embodiment, both the upper shield 186 and the lower shield 180 include stainless steel. In one embodiment, the chamber 100 includes a middle shield (not shown) coupled to the upper shield 186. In one embodiment, the upper shield 186 and the lower shield 180 are electrically floating in the chamber 100. In one embodiment, the upper shield 186 and the lower shield 180 may be coupled to an electric power source.

In an embodiment, the upper shield 186 has an upper portion, which closely fits the annular side groove of the target 142 with a narrow gap 188 (between the upper shield 186 and the target 142), and the narrow gap 188 Narrow enough to prevent the plasma from penetrating and sputter coating the dielectric isolator 146. The upper shield 186 may also include a downwardly protruding top 190, which covers the interface between the lower shield 180 and the upper shield 186, thereby preventing the shields from being joined by a sputter deposition material.

In one embodiment, the lower shield 180 extends downward to a cylindrical outer band 196 that generally extends along the chamber wall 150 to a lower surface than the top surface of the seat 152. The lower shield 180 may have a base plate 198 extending radially inward from the cylindrical outer band 196. The base plate 198 may include a cylindrical inner band 103 extending upwardly around the periphery of the seat 152. In one embodiment, when the seat 152 is in the lower loading position, the cover ring 102 is supported on the top of the cylindrical inner band 103. When the seat is in the upper deposition position, the cover ring 102 is supported on the outer periphery of the seat 152. The protection base 152 is not subject to sputtering deposition.

The lower shield 180 surrounds the target 142 facing the sputtering surface 145 of the support base 152 and surrounds the peripheral wall of the support base 152. The lower shield 160 covers and shields the chamber wall 150 of the chamber 100 to reduce the deposition of sputter deposits from the sputtering surface 145 of the sputtering target 142 on the components and the surface of the lower shield 180. For example, the lower shield 180 may protect the surface of the support base 152, portions of the substrate 154, the chamber wall 150, and the bottom wall 160 of the chamber 100.

In one embodiment, directional sputtering can be achieved by positioning the collimator 110 between the target 142 and the substrate support 152. The collimator 110 may be mechanically or electrically coupled to the upper shield 186. In an embodiment, the collimator 110 may be coupled to a middle shield (not shown) positioned lower in the chamber 100. In one embodiment, the collimator 110 is integrated into the upper shield 186, as shown in FIG. 8. In one embodiment, the collimator 110 is soldered to the upper shield 186. In one embodiment, the collimator 110 may be electrically floating in the chamber 100. In an embodiment, the collimator 110 may be coupled to an electric power source. The collimator 110 includes a plurality of orifices (omitted in FIG. 1) for guiding the gas and / or material flow in the chamber.

FIG. 2 is a top plan view of an embodiment of the collimator 110. The collimator 110 is typically a closely packed honeycomb structure having a hexagonal wall 126 for separating the hexagonal apertures 128. The aspect ratio of the hexagonal aperture 128 may be defined as the depth of the aperture 128 (equal to the thickness of the collimator) divided by the width 129 of the aperture 128. In one embodiment, the thickness of the wall 126 is between about 0.06 inches and about 0.18 inches. In one embodiment, the thickness of the wall 126 is between about 0.12 inches and about 0.15 inches. In one embodiment, the collimator comprises a material selected from the group consisting of aluminum, copper, and stainless steel.

FIG. 3 is a schematic cross-sectional view of a collimator 310 according to one embodiment described herein. The collimator 310 includes a central region 320 having a high aspect ratio, such as from about 1.5: 1 to about 3: 1. In one embodiment, the aspect ratio of the central region 320 is about 2.5: 1. The aspect ratio of the collimator 310 decreases in the radial direction from the central region 320 to the outer peripheral region 340. In one embodiment, the aspect ratio of the collimator 310 is from the central region 320 to the peripheral region 340, and the aspect ratio is reduced from about 2.5: 1 to about 1: 1. In another embodiment, the aspect ratio of the collimator 310 is from the central region 320 to the peripheral region 340, and the aspect ratio is reduced from about 3: 1 to about 1: 1. In one embodiment, the aspect ratio of the collimator 310 is from the central region 320 to the peripheral region 340, and the aspect ratio is reduced from about 1.5: 1 to about 1: 1.

In one embodiment, the reduction of the radial holes of the collimator 310 is accomplished by changing the thickness of the collimator 310. In one embodiment, the central region 320 of the collimator 310 has an increased thickness, such as between about 3 inches and about 6 inches. In one embodiment, the thickness of the central region 320 of the collimator 310 is about 5 inches. In one embodiment, the thickness of the collimator 310 is reduced from about 5 inches to about 2 inches from the central region 320 to the peripheral region 340. In one embodiment, the thickness of the collimator 310 decreases from the central region 320 to the peripheral region 340 in a radial direction from about 6 inches to about 2 inches. In one embodiment, the thickness of the collimator 310 decreases from the central region 320 in a radial direction from about 2.5 inches to about 2 inches.

Although the aspect ratio of the embodiment of the collimator 310 shown in FIG. 3 shows a radially reduced thickness, the width of the aperture of the collimator 310 can be increased from the central region 320 to the peripheral region 340 To reduce the aspect ratio. In another embodiment, the thickness of the collimator 310 decreases from the central region 320 to the peripheral region 340 and the width of the collimator 310 increases from the central region 320 to the peripheral region 340.

Generally speaking, the embodiment in FIG. 3 illustrates an aspect ratio of an inverted conical shape obtained by linearly decreasing radially. Other embodiments of the invention may include a non-linearly reduced aspect ratio.

FIG. 4 is a schematic cross-sectional view of a collimator 410 according to an embodiment of the present invention. The collimator 410 has a thickness that decreases in a non-linear manner from the central region 420 to the peripheral region 440 to obtain a convex shape.

FIG. 5 is a schematic cross-sectional view of a collimator 510 according to an embodiment of the present invention. The collimator 510 has a thickness that decreases in a non-linear manner from the central region 520 to the peripheral region 540 to obtain a concave shape.

In some embodiments, the central regions 320, 420, 520 are nearly zero, so that the central regions 320, 420, 520 appear as a point at the bottom of the collimators 310, 410, 510.

Referring back to FIG. 1, regardless of the actual shape of the collimator 110 with a reduced aspect ratio, the operation of the PVD process chamber 100 is similar to the function of the collimator 110. The system controller 101 is disposed on the outside of the chamber 100 and generally facilitates control and automation of the overall system. The system controller 101 may include a central processing unit (CPU) (not shown), a memory (not shown), and a support circuit (not shown). The CPU can be any computer processor used in industrial equipment to control multiple system functions and chamber processes.

In one embodiment, the system controller 101 provides a signal to position the substrate 154 on the substrate support 152 and generate a plasma in the chamber 100. The system controller 101 sends a signal to apply a voltage through the DC power source 148 to bias the target 142 and excite a process gas (eg, argon) into a plasma. The system controller 101 may further provide a signal to cause the RF power source 156 to DC self-bias the socket 152. DC self-biasing helps attract positively charged ions generated in the plasma to penetrate into the high-aspect-ratio interlayer holes and grooves on the substrate surface.

The collimator 110 performs a function as a filter to trap ions and neutral particles emitted from the target 142 at an angle exceeding a selected angle (almost perpendicular to the substrate 154). The collimator 110 may be one of the collimators 310, 410, and 510 shown in Figs. 3, 4, and 5, respectively. The collimator 110 having a characteristic of reducing the aspect ratio radially from the center allows a larger percentage of ions emitted from the peripheral region of the target 142 to pass through the collimator 110. Therefore, the number of ions deposited in the peripheral region of the substrate 154 and the angle at which the ions reach can be increased at the same time. Therefore, according to the embodiment of the present invention, the deposition material can be sputter-deposited more uniformly across the surface of the substrate 154. In addition, materials can be deposited more uniformly on the bottom and side walls with high aspect ratio feature structures, especially interlayer holes and grooves with high aspect ratio located near the periphery of the substrate 154.

In addition, in order to provide a sputter deposition material with a greater coverage on the bottom and sidewalls of a feature structure with a high aspect ratio, the material deposited on the field and bottom areas of the feature structure can be sputter-etched. In one embodiment, the system controller 101 applies a high bias to the base 152 such that the target 142 ion-etches the film that has been deposited on the substrate 154. Therefore, the field deposition rate deposited on the substrate 154 is reduced, and the sputtered material is re-deposited to the sidewall or bottom of the feature structure having a high aspect ratio. In one embodiment, the system controller 101 applies a high bias voltage and a low bias voltage to the socket 152 in a pulsed or alternating manner, so that the process becomes a pulsed deposition / etching process. In one embodiment, the collimator 110 unit located below the magnet 172 directs a large amount of deposited material toward the substrate 154. Therefore, at any particular time, material may be deposited in one region in the substrate 154 while material that has been deposited in another region of the substrate 154 may be etched.

In one embodiment, in order to provide greater coverage of sputter deposition materials on the sidewalls of a feature structure with a high aspect ratio, a secondary plasma such as an argon plasma (which is generated in the chamber near the substrate) 154) to sputter etch the material deposited on the bottom of the feature structure. In an embodiment, the chamber 100 includes an RF coil 141 that is attached to the lower shield 180 by a plurality of coil spacers 143 that electrically insulate the coil 141 from the lower shield 180. The system controller 101 sends a signal to apply RF power through a feedthrough standoff (not shown) via the shield 180 to the coil 141. In one embodiment, the RF coil inductively couples RF energy to the interior of the chamber 100 to ionize a precursor gas (such as argon) while maintaining a secondary plasma near the substrate 154. The second-level plasma is further sputtered with a deposition layer from the bottom of the high-aspect-ratio feature structure and then deposits material on the sidewall of the feature structure.

Still referring to FIG. 1, the collimator 110 may be attached to the upper shield 186 by a plurality of radial brackets 111.

FIG. 6 is an enlarged cross-sectional view of a bracket 611 for attaching the collimator 110 to the upper shield 186 according to an embodiment of the present invention. The bracket 611 includes an internally threaded tube 613 that is welded to the collimator 110 and extends radially outward from the collimator 110. A fastening member 615 (eg, a bolt) may be inserted into the aperture of the upper shield 186 and screwed into the pipe 613 to attach the collimator 110 to the upper shield 186 while enabling the threads that may be deposited on the pipe 613 or the fastening member 615 Partial material is minimized.

FIG. 7 is an enlarged cross-sectional view of a bracket 711 for attaching the collimator 110 to the upper shield 186 according to another embodiment of the present invention. The bracket 711 includes a stud 713 which is welded to the collimator 110 and extends radially outward from the collimator 110. An internally threaded fastening member 715 can be inserted and threaded through an opening in the upper shield 186 and screwed onto the nut 713 to attach the collimator 110 to the upper shield 186 while making it possible for the The material of the threaded portion of the fixing member 715 is minimized.

FIG. 8 is a schematic cross-sectional view of a semiconductor process system 800 having another embodiment of a process kit 840 described herein. Similar to the process kit 140, the process kit 840 includes a one-piece lower shield 180. However, unlike a process kit 140 that includes a separate collimator 110 coupled to an upper shield 186 through a radial bracket 111, the process kit 840 includes a single upper shield 886 that includes a shield portion 892 and integration The flux optimizer section 810. The monolithic structure of the shield 886 on the monolith allows for maximum cooling efficiency. The integrated flux optimizer portion 810 includes a plurality of orifices (omitted in FIG. 8) for directing the gas and / or material flux in the chamber as described above.

FIG. 9A is a partial cross-sectional view of a monolithic shield 886 according to an embodiment described herein. FIG. 9B is a top plan view of the unitary shield 886 according to FIG. 9A of the embodiment described herein. The size of the shield 886 on the cell is adjusted to surround the sputtering surface 145 of the sputtering target 142 facing the support 152. A shield 886 on the cell shields the adapter 144 of the chamber 100 to reduce deposits sputtered from the sputtering surface 145 of the sputtering target 142.

As shown in Figures 8, 9A, and 9B, the on-monitor shield 886 is a single structure and includes a shield portion 892 and an integrated flux optimizer portion 810. For example, the shielding portion 892 and the integrated flux optimizer portion 810 may be manufactured from a single mass material. The shielding portion 892 includes a cylindrical tape 902. The cylindrical band 902 includes a top wall 904 and a bottom wall 906. The support flange 908 extends radially outward from the top wall 904 of the cylindrical band 902. The support flange 908 includes a support surface 910 for supporting the adapter 144 of the chamber 800. In one embodiment, the support surface 910 and the bottom wall 906 intersect to form a 90 degree angle. In one embodiment, the support flange 908 has a plurality of slits that are shaped to receive the pins that align the upper shield 892 to the adapter 144. In one embodiment, the support flange 908 has one or more notches 940 positioned periodically around the cylindrical band 902.

As shown in FIG. 9A, the top wall 904 further includes a top surface 925, an inner periphery 926, and an outer periphery 928. The outer periphery of the top wall 904 and the support flange 908 intersect to form a stepped portion 932.

In an embodiment, as shown in FIG. 8, the bottom flange 906 of the cylindrical band 902 has an outer diameter (illustrated by an arrow “A”), and is adjusted to fit under the adapter 144 and support The stepped portion 1032 of the shield 180 (shown in FIG. 10B). In one embodiment, the diameter “A” outside the bottom wall 906 is between about 18 inches (45.7 cm) and about 18.5 inches (47 cm). In another embodiment, the diameter "A" outside the bottom wall 906 is between about 18.1 inches (46 cm) and about 18.2 inches (46.2 cm). In one embodiment, the cylindrical band 902 has an inner diameter illustrated by an arrow "B". In one embodiment, the inner diameter "B" of the cylindrical band 902 is between about 17.2 inches (43.7 cm) and about 17.9 inches (45.5 cm). In another embodiment, the inner diameter "B" of the cylindrical band 902 is between about 17.5 inches (44.5 cm) and about 17.7 inches (45 cm). In one embodiment, the top wall 904 has an outer diameter illustrated by an arrow "C". In one embodiment, the top wall 904 and the bottom wall 906 have the same inner diameter “B”.

In one embodiment, the outer diameter "C" of the top wall 904 is between about 18 inches (45.7 cm) and about 18.5 inches (47 cm). In another embodiment, the outer diameter "C" of the top wall 904 is between about 18.3 inches (46.5 cm) and about 18.4 inches (46.7 cm). In an embodiment, the outer diameter “C” of the top wall 904 is larger than the outer diameter “A” of the bottom wall 906.

The integrated flux optimizer portion 810 can be designed similarly to one of the collimators 310, 410, or 510 shown in Figures 3, 4, and 5, respectively. As shown in Figure 9B, the integrated flux optimizer portion 810 is typically a honeycomb structure in a tightly packed configuration with a hexagonal wall 942 that separates the hexagonal orifices 944. The aspect ratio of the hexagonal orifice 944 may be defined as the depth of the orifice 944 (equal to the thickness of the integrated flux optimizer portion 810) divided by the width 946 of the orifice. In one embodiment, the hexagonal wall 942 adjacent to the shielding portion 892 has a chamfer 950 and a radius.

In one embodiment, the monolithic shield 886 may be mechanically formed from a single piece of aluminum. The on-cell shield 886 can be selectively coated or anodized. Alternatively, the on-cell shield 886 may be made of other materials compatible with the process environment, and may also include one or more sections. Alternatively, the shield portion 892 and the integrated flux optimizer portion 810 of the upper shield may be formed in separate pieces and coupled together using an appropriate attachment method such as soldering.

10A and 10B are partial cross-sectional views of a shield according to an embodiment described herein. FIG. 10C is a top view of an embodiment of the shield under FIG. 10A. As shown in FIGS. 1 and 10A-10C, the lower shield 180 has a single structure and includes a cylindrical outer band 196, a base plate 198, and an inner cylindrical band 103. The cylindrical outer band 196 has a diameter adjusted to surround the sputtering surface 145 of the sputtering target 142 and the peripheral edge 153 of the seat 152. The cylindrical outer band 196 includes an upper portion 1012, a middle portion 1014, and a lower portion 1016. The upper portion 1012 is sized to surround the sputtering surface 145 of the sputtering target 142. The support flange 182 extends radially outward from the upper portion 1012 of the cylindrical outer band 196. The support flange 182 includes a support surface 1024 to support the chamber wall 150 of the chamber 100. The support surface 1024 may have a plurality of slits that are shaped to receive a latch that aligns the lower shield 180 to the chamber wall 150 or any adapter positioned between the chamber wall 150 and the lower shield 180 . In one embodiment, the support surface 1024 has a surface roughness of about 10 to about 80 microinches, even about 16 to about 63 microinches, or in one embodiment, a surface roughness of about 32 microinches.

As shown in Figure 10B, the upper portion 1012 includes a top surface 1025, an inner periphery 1026, and an outer periphery 1028. The outer periphery 1028 extends upwardly above the top surface 1025 to form an annular lip 1030. The annular lip 1030 forms a stepped portion 1032 having a top surface 1025. In one embodiment, the annular lip 1030 is positioned perpendicular to the top surface 1025 to form a stepped portion 1032. The stepped portion 1032 provides a support surface to engage the upper shield 186.

In one embodiment, the annular lip 1030 has an outer diameter illustrated by an arrow "D". In one embodiment, the outer diameter "D" of the annular lip 1030 is between about 18.4 inches (46.7 cm) and about 18.7 inches (47.5 cm). In another embodiment, the outer diameter "D" of the annular lip 1030 is between about 18.5 inches (47 cm) and about 18.6 inches (47.2 cm). In one embodiment, the annular lip 1030 has an inner diameter illustrated by an arrow "E". In one embodiment, the inner diameter "E" of the annular lip 1030 is between about 18.2 inches (46.2 cm) and about 18.5 inches (47 cm). In another embodiment, the inner diameter "E" of the annular lip 1030 is between about 18.3 inches (46.5 cm) and about 18.4 inches (46.7 cm).

In one embodiment, the outer diameter of the top surface 1025 is the same as the inner diameter “E” of the annular lip 1030. In one embodiment, the top surface has an inner diameter illustrated by an arrow "F". In one embodiment, the inner diameter “F” of the top surface 1025 is between about 17.2 inches (43.7 cm) and about 18 inches (45.7 cm). In another embodiment, the inner diameter "F" of the top surface 1025 is between about 17.5 inches (44.5 cm) and about 17.6 inches (44.7 cm).

In one embodiment, the inner periphery 1026 of the upper portion 1012 is angled radially outward from the vertical direction at an angle a. In one embodiment, the angle between the angle a and the vertical direction is about 2 ° to about 10 °. In one embodiment, the angle between the angle a and the vertical direction is about 4 °.

The lower portion 1016 is sized to surround the seat 152. The base plate 198 extends radially inward from the lower portion 1016 of the cylindrical outer band 196. The cylindrical inner band 103 is coupled to the base plate 198 and adjusted to surround the seat 152. The cylindrical inner band 103, the base plate 198, and the cylindrical outer band 196 form a U-shaped channel. The cylindrical inner band 103 includes a height lower than the height of the cylindrical outer band 196. In one embodiment, the height of the inner cylindrical band 103 is about one fifth of the height of the cylindrical outer band 196. In one embodiment, the middle portion 1014 has a notch 1040. In one embodiment, the cylindrical outer band 196 has a plurality of gas holes 1042.

In one embodiment, the base plate 198 has an outer diameter illustrated by an arrow “G”. In one embodiment, the outer diameter “G” of the base plate 198 is between about 17 inches (43.2 cm) and about 17.4 inches (44.2 cm). In another embodiment, the outer diameter “G” of the base plate 198 is between about 17.1 inches (43.4 cm) and about 17.2 inches (43.7 cm). In one embodiment, the base plate 198 has an inner diameter illustrated by an arrow "I". In one embodiment, the inner diameter “I” of the base plate 198 is between about 13.9 inches (35.3 cm) and about 14.4 inches (36.6 cm). In another embodiment, the inner diameter “I” of the base plate 198 is between about 14 inches (35.6 cm) and about 14.1 inches (35.8 cm).

In one embodiment, the inner cylindrical band 103 has an outer diameter illustrated by an arrow “H”. In one embodiment, the outer diameter "H" of the inner cylindrical band is between about 14.0 inches (35.6 cm) and about 14.3 inches (36.3 cm). In another embodiment, the inner cylindrical band 103 has an outer diameter illustrated by an arrow "H". In one embodiment, the outer diameter “H” of the inner cylindrical band 103 is between about 14.2 inches (36.1 cm) and about 14.3 inches (36.3 cm).

In one embodiment, the cylindrical outer band 196, the base plate 198, and the inner cylindrical band 103 include a single structure. A single shield 180 is better than a conventional shield that includes multiple components (usually two or three individual segments to assemble the entire lower shield). For example, in the heating and cooling process, a single segment shields more parts and the shielding is more thermally uniform. For example, the shield and the chamber wall 150 under a single segment have only one thermal contact surface, so that the heat exchange between the shield 180 and the chamber wall 150 can be more controlled. The shield 180 having multiple shield members makes it difficult and laborious to remove the shield during cleaning. The single-segment shield 180 has a continuous surface that is exposed to sputter deposition without an interface or corner that is difficult to clean. The single-segment shield 180 can also effectively shield the chamber walls 150 from sputter deposition during a process cycle.

In one embodiment, the upper screen walls 186, 886 and / or the lower screen wall 180 may be made of 300 series stainless steel, or in other embodiments, may be made of aluminum. In one embodiment, the exposed surfaces of the upper screen wall 186, 886 and / or the lower screen wall 180 are treated with CLEANCOATTW, which can be purchased from Applied Materials, Inc. of Santa Clara, California. CLEANCOATTW is a twin-wire aluminum arc spray coating applied to substrate processing chamber components (eg, upper screen walls 186, 886, and / or lower screen wall 180) to reduce particle shedding and deposition On the shield to prevent contamination of the substrate in the chamber. In one embodiment, the dual core aluminum arc spraying on the upper screen walls 186, 886 and / or the lower screen wall 180 has a surface roughness from about 600 to about 2300 micro inches.

The upper screen walls 186, 886 and / or the lower screen wall 180 have exposed surfaces facing the internal space in the chambers 100, 800. In one embodiment, the exposed surface is bead blasted to have a surface roughness of 175 ± 75 microinches. The textured bead blasting surface is used to reduce particle shedding and prevent contamination in the chambers 100, 800. The average value of the surface roughness is an average of the absolute values of the displacements along the average line of the roughness characteristics of the exposed surface from the peak portion to the valley portion. The average roughness, skewness, or other properties can be determined by a profilometer that moves the needle on the exposed surface and produces a highly disturbed trajectory of roughness on the surface, or by scanning electrons using an electron beam reflected from the surface A microscope to produce an image of the surface.

Although the foregoing is directed to the embodiments of the present invention, other and further embodiments can be developed without departing from the basic scope of the present invention and the range determined by the scope of the following patent applications.

100‧‧‧ chamber

101‧‧‧System Controller

102‧‧‧ Covering ring

103‧‧‧ inner lip

110‧‧‧collimator

111‧‧‧Radial bracket

126‧‧‧Hexagonal wall

128‧‧‧ orifice

129‧‧‧Width

141‧‧‧coil

142‧‧‧Target

143‧‧‧coil spacer

144‧‧‧Adapter

146‧‧‧Dielectric isolator

148‧‧‧Power source

150‧‧‧ chamber wall

152‧‧‧ seats

153‧‧‧peripheral edges

154‧‧‧ substrate

156‧‧‧Power source

158‧‧‧Expansion bag

160‧‧‧ bottom chamber wall

162‧‧‧Gas source

164‧‧‧mass flow controller

170‧‧‧Magnetron

172‧‧‧magnet

174‧‧‧ substrate

176‧‧‧axis

180‧‧‧ under shield

182‧‧‧Upper flange

184‧‧‧ flange

186‧‧‧shielded

188‧‧‧Narrow gap

190‧‧‧ protruding top

196‧‧‧ Tubular section / cylindrical outer band

198‧‧‧ bottom section / base plate

310‧‧‧ Collimator

320‧‧‧ central area

340‧‧‧surrounding area

410‧‧‧Collimator

420‧‧‧central area

440‧‧‧surrounding area

510‧‧‧Collimator

520‧‧‧central area

540‧‧‧surrounding area

611‧‧‧ bracket

613‧‧‧tube

615‧‧‧ Fastening member

711‧‧‧ bracket

713‧‧‧Screw

715‧‧‧ Fastening member

800‧‧‧ Monolithic Collimator / Processing System

810‧‧‧ Optimizer section

886‧‧‧shielded on single unit

892‧‧‧shielded

In order to make the above features of the present invention more comprehensible, descriptions with reference to the embodiments may be used, and parts of the present invention are shown in drawings. It should be noted that although the attached drawings disclose specific embodiments of the present invention, they are not intended to limit the spirit and scope of the present invention. Anyone skilled in this art can make various modifications and retouching to obtain equivalent embodiments .

FIG. 1 is a schematic cross-sectional view of a semiconductor process system having one embodiment of a process kit described herein.

Figure 2 is a top plan view of a collimator according to the embodiments described herein.

Figure 3 is a schematic cross-sectional view of a collimator according to the embodiments described herein.

Figure 4 is a schematic cross-sectional view of a collimator according to the embodiments described herein.

Figure 5 is a schematic cross-sectional view of a collimator according to the embodiments described herein.

FIG. 6 is an enlarged partial cross-sectional view of a stent according to an embodiment described herein for attaching a collimator to a PVD chamber for shielding.

Figure 7 is a partial cross-sectional view of a stent according to an embodiment described herein for attaching a collimator to a PVD chamber for shielding.

FIG. 8 is a schematic cross-sectional view of a semiconductor process system having another process kit described herein.

FIG. 9A is a partial cross-sectional view of a shield on a cell according to an embodiment described herein.

FIG. 9B is a top plan view of a shield on a cell according to FIG. 9A of the embodiment described herein.

FIG. 10A is a cross-sectional view of a shield according to one of the embodiments described herein.

FIG. 10B is a partial cross-sectional view of an embodiment of the shield under FIG. 10A.

FIG. 10C is a top view of an embodiment of the shield under FIG. 10A.

Domestic hosting information (please note in order of hosting institution, date, and number) None

Information on foreign deposits (please note in order of deposit country, institution, date, and number) None

Claims (20)

A collimator includes: a first surface and an opposite second surface, the second surface facing away from the first surface, the second surface having a first portion, a second portion, and a third portion, the The first portion is a first distance from the first surface, the second portion is a second distance from the first surface, the third portion extends between the first portion and the second portion and is on the first surface One side extends upward; a honeycomb structure having walls that define and separate individual apertures extending from the first surface to the second surface, wherein the individual apertures include: in a central region A first aperture having a first aspect ratio and extending from the first surface to the first portion of the second surface; a second plurality of apertures in a peripheral area, the The second plurality of apertures have a second aspect ratio and extend from the first surface to the second portion of the second surface, the second aspect ratio being smaller than the first aspect ratio; and a transition region The third plurality of orifices in the third A plurality of apertures are provided from the peripheral region to the central region and extend from the first surface to the third portion, wherein an aspect ratio of the third plurality of apertures extends from the central region to the peripheral region along the The transition area decreases radially in a linear manner. The collimator according to claim 1, wherein a thickness of the collimator is thicker in the central region than in the peripheral region. A collimator as described in claim 2, comprising a material selected from the group consisting of aluminum, copper, and stainless steel. The collimator according to claim 1, wherein the first aspect ratio is 1.5: 1 to 3: 1. The collimator as described in claim 1, wherein the aspect ratio of the orifices at the central region is 3: 1, and the aspect ratio of the orifices at the peripheral region is 1 :1. The collimator of claim 1, wherein the walls have a thickness between 0.06 inches and 0.18 inches. The collimator of claim 6, wherein the thickness is between 0.12 inches and 0.15 inches. The collimator according to claim 1, wherein the peripheral area of the honeycomb structure has a chamfer wall. An upper shield for a PVD chamber, comprising: the collimator as described in claim 1; and a shield part. The upper shielding according to claim 9, wherein the collimator is coupled to the shielding portion via a bracket, the bracket comprising: an externally threaded member; and an internally threaded member, the internally threaded member and the externally threaded member Mesh. Shielding as described in claim 9, wherein the collimator is soldered to the shielding portion. The shielding as described in claim 9, wherein the shielding part and the collimator are machined from a single piece of aluminum. The shielding as recited in claim 9, wherein the shielding portion includes a support flange extending radially outward from a cylindrical band. The shield as described in claim 13, wherein the support flange includes one or more notches that are periodically positioned around the cylindrical band. A process kit includes: an upper shield as described in claim 9; and a lower shield for surrounding a substrate support seat facing a sputtering target in a substrate processing chamber, the lower shield The shield includes: a cylindrical outer band having a first diameter, the first diameter adjusted to surround a sputtering surface of the sputtering target and the substrate support, the cylindrical outer band The belt includes: an upper portion surrounding the sputtering surface of the sputtering target, the upper portion having: a top surface; an inner periphery; and an outer periphery extending upwardly above the top surface To form an annular lip, the annular lip forming a stepped portion having the top surface, the stepped portion joining the upper shield; a middle portion; and a bottom portion, the bottom portion being used to surround the substrate support A support flange having a resting surface and extending radially outward from the cylindrical outer band; a base plate radially inward from the bottom portion of the cylindrical outer band Extension; and a cylindrical shape An inner band, the cylindrical inner band being coupled to the base plate and partially surrounding a peripheral edge of the base support seat. The process kit according to claim 15, wherein the inner periphery of the top portion is at an angle of 2 to 10 degrees with respect to the vertical direction. The process kit according to claim 16, wherein the cylindrical inner band, the base plate, and the cylindrical outer band form a U-shaped channel. The process kit according to claim 17, wherein the cylindrical inner band includes a height lower than a height of the cylindrical outer band. The process kit according to claim 18, wherein the height of the cylindrical inner band is one fifth of the height of the cylindrical outer band. The process kit according to claim 15, wherein the cylindrical outer band, the support flange, the base plate, and the cylindrical inner band include a single structure.