TW201911400A - Processing liquid elimination method, substrate processing method and substrate processing system - Google Patents

Abstract

A substrate processing method comprises: a processing liquid ejection step of ejecting a processing liquid from a processing liquid nozzle onto a major surface of a substrate; and an electrically conductive ejection step of ejecting, when the processing liquid ejection step is not being performed, the processing liquid from an ejection opening of the processing liquid nozzle onto a grounded electrically conductive portion in the form of a continuous flow, wherein the ejection opening of the processing liquid nozzle and the electrically conductive portion are liquidly connected by means of the processing liquid, thereby neutralizing the processing liquid in a processing liquid pipe for supplying the processing liquid to the processing liquid nozzle.

Description

 Treatment liquid removal method, substrate processing method, and substrate processing system  

The present invention relates to a treatment liquid removing method, a substrate processing method, and a substrate processing system. The substrate to be processed includes, for example, a semiconductor wafer (semiconductor wafer), a liquid crystal display device substrate, an organic electroluminescence (electroluminescence) display device, and the like, and an FPD (Flat Panel Display) substrate or a disc. A substrate, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramics substrate, a substrate for a solar cell, or the like.

In the manufacturing process of a semiconductor device, for example, a monolithic substrate processing system in which a substrate is processed one by one is provided with a chamber; a spin chuck is used to hold the substrate substantially horizontally while in the chamber. The substrate is rotated; and a nozzle for discharging the processing liquid toward the main surface of the substrate rotated by the rotating chuck.

In the substrate processing using the substrate processing system as described above, the chemical liquid processing for supplying the chemical liquid to the main surface of the substrate, for example, in a rotating state, is performed. The chemical liquid supplied to the main surface of the substrate is subjected to centrifugal force generated by the rotation of the substrate, and flows over the main surface of the substrate toward the periphery and over the entire area of the main surface of the substrate. Thereby, the entire area of the main surface of the substrate is subjected to treatment by the chemical liquid.

There is a case where the substrate carried into the chamber is charged. The substrate to be carried into the chamber is subjected to a chemical treatment, but when the substrate carried into the chamber is charged, a portion where the chemical liquid is liquid or a chemical liquid is ejected when the chemical is ejected from the nozzle toward the main surface of the substrate. The electrostatic discharge is generated in the vicinity of the liquid-imposed portion as the main surface of the substrate comes into contact with the chemical solution. In this case, there is a case where pattern breakage occurs and the treatment liquid is discharged to cause damage to the substrate.

As described in Patent Document 1 below, it has been proposed to prevent each part of the fluid cartridge portion from being contained in the fluid cell portion in order to prevent electrostatic discharge from occurring on the main surface of the substrate (the treatment liquid storage tank, the temperature regulator, and the filter cartridge (filter) Box) and multi-manifold methods for configuring carbon electrodes. Each of the carbon electrodes is grounded, and a part of each of the carbon electrodes is in contact with the treatment liquid, whereby the treatment liquid in the fluid cartridge can be removed.

[Previous Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Laid-Open Patent Publication No. 2006-269677.

However, in the case where the carbon electrode is disposed in the fluid box portion, there is a concern that carbon is dissolved in the treatment liquid. The carbon as the electrode material is mixed into the treatment liquid by the contact of the carbon electrode with the treatment liquid, and as a result, the treatment liquid contaminated by the treatment liquid in the fluid chamber portion is supplied to the substrate. Therefore, a method of well-removing the treatment liquid in the treatment liquid pipe without contaminating the treatment liquid in the treatment liquid pipe has been sought.

Here, an object of the present invention is to provide a treatment liquid removing method, a substrate processing method, and a substrate processing system capable of well removing a treatment liquid in a treatment liquid pipe, the substrate processing method, and the substrate treatment described above. The system is capable of ejecting a treatment liquid that has been subjected to static elimination from the discharge port, thereby preventing or suppressing discharge of electrostatic discharge due to discharge of the treatment liquid to the substrate.

The present invention provides a treatment liquid removal method for removing a treatment liquid in a treatment liquid pipe in a substrate processing system for processing a substrate using a treatment liquid, the substrate processing system comprising: a chamber; a treatment liquid nozzle; The processing liquid supply unit includes a processing liquid pipe internally connected to the ejection port for supplying a processing liquid to the processing liquid nozzle, and a conductive portion disposed in the cavity. In the indoor and grounding structure, the conductive portion is grounded, and the processing liquid removing method includes a processing liquid discharging step of discharging a processing liquid from the processing liquid nozzle toward a main surface of the substrate, and a conductive discharging step. When the processing liquid ejecting step is not performed, the processing liquid is ejected from the ejection port toward the conductive portion in a continuous flow state, and the ejection port and the conductive portion are in fluid contact by the processing liquid. The treatment liquid in the treatment liquid pipe is neutralized.

According to this method, when the treatment liquid discharge step is not performed, the treatment liquid is ejected from the discharge port toward the conductive portion in a continuous flow state, and in this state, the discharge port and the conductive portion are in fluid contact by the treatment liquid.

Thereby, in the case where the treatment liquid in the treatment liquid pipe is positively or negatively charged, electrons are connected between the discharge port and the conductive portion due to a potential difference generated between the treatment liquid and the conductive portion in the treatment liquid pipe. The liquid is moved by the treatment liquid.

When the treatment liquid in the treatment liquid pipe is negatively charged, the electrons contained in the treatment liquid in the treatment liquid pipe move to the conductive portion via the treatment liquid, and thus escape through the ground structure. Thereby, the treatment liquid in the treatment liquid pipe which has been negatively charged is neutralized.

Further, when the treatment liquid in the treatment liquid pipe is positively charged, the electrons included in the conductive portion move into the treatment liquid pipe via the ground structure and the treatment liquid. Since the number of electrons contained in the treatment liquid in the treatment liquid pipe increases, the treatment liquid in the treatment liquid pipe that has been positively charged is de-energized.

Therefore, the treatment liquid in the treatment liquid pipe can be well removed.

In one embodiment of the present invention, the conductive discharge step may include a step of removing the treatment liquid in the circulation pipe that circulates the treatment liquid in the tank.

Even when the treatment liquid from the treatment liquid nozzle is not discharged (when the treatment liquid discharge step is not performed), the treatment liquid in the circulation pipe circulates. Therefore, when the treatment liquid from the treatment liquid nozzle is not discharged (when the treatment liquid discharge step is not performed), the treatment liquid in the circulation pipe is easily charged by friction with the pipe wall of the circulation pipe.

According to this method, the treatment liquid is ejected from the discharge port toward the conductive portion in a continuous flow state, and the discharge port and the conductive portion are connected by the liquid by the treatment liquid, whereby the treatment liquid in the circulation pipe can be well removed. .

In one embodiment of the present invention, the method further includes a substrate holding step of holding the substrate by the substrate holding unit housed in the chamber. Then, the conductive discharge step may include a step performed after the substrate holding step and before the processing liquid discharging step.

According to this method, the conductive discharge step is performed after the substrate holding step and before the processing liquid discharging step. When a long time elapses from the end of the conductive discharge step, the amount of charge contained in the treatment liquid in the treatment liquid pipe increases.

Since the conductive discharge step is performed after the substrate holding step, it can be inferred that the interval between the conductive discharge step and the treatment liquid discharge step is a short interval, and in this case, the amount of charge contained in the treatment liquid in the treatment liquid pipe is small. In this case, in the treatment liquid discharge step, the treatment liquid in a state where the electric charge is sufficiently removed can be ejected from the discharge port.

In one embodiment of the present invention, the conductive discharge step includes a step of discharging the processing liquid from the discharge port in a state where the processing liquid nozzle is disposed at a second position different from the first position, and the first step The position is such that the processing liquid discharged from the ejection port is supplied to the main surface of the substrate, and the substrate is held by the substrate holding unit housed in the chamber.

According to this method, in the conductive discharge step, the treatment liquid is discharged from the discharge port in a state where the treatment liquid nozzle is disposed at the second position, and the treatment liquid is supplied to the conductive portion. Thereby, the processing liquid discharged from the discharge port can be surely supplied to the conductive portion in the conductive discharge step.

The present invention provides a substrate processing method that is executed in a substrate processing system that processes a substrate housed in a chamber using a processing liquid, and includes: the chamber; and a substrate holding unit that is housed a processing liquid nozzle is housed in the chamber and has a discharge port; and a processing liquid supply unit has a processing liquid pipe internally connected to the discharge port for the treatment liquid a nozzle is supplied with a processing liquid; a conductive portion is disposed in the chamber; and a grounding structure is used to ground the conductive portion; and the substrate processing method includes a processing liquid discharging step from the ejection port toward a main surface of the substrate Disposing the treatment liquid in the treatment liquid pipe; and the conductive discharge step of discharging the treatment liquid from the discharge port toward the conductive portion in a continuous flow state when the treatment liquid discharge step is not performed, the discharge port and the discharge port The conductive portion is in fluid contact by the treatment liquid, thereby removing the treatment liquid in the treatment liquid pipe Electricity.

According to this method, when the treatment liquid discharge step is not performed, the treatment liquid is ejected from the discharge port toward the conductive portion in a continuous flow state, and in this state, the discharge port and the conductive portion are in fluid contact by the treatment liquid. In the case where the treatment liquid in the treatment liquid pipe is positively or negatively charged, electrons are passed through the treatment liquid between the discharge port and the conductive portion due to a potential difference generated between the treatment liquid in the treatment liquid pipe and the conductive portion. mobile.

When the treatment liquid in the treatment liquid pipe is negatively charged, electrons contained in the treatment liquid in the treatment liquid pipe move to the conductive portion via the treatment liquid and escape. Thereby, the treatment liquid in the treatment liquid pipe which has been negatively charged is neutralized.

Further, when the treatment liquid in the treatment liquid pipe is positively charged, electrons contained in the conductive portion move into the treatment liquid pipe via the treatment liquid. Since the number of electrons contained in the treatment liquid in the treatment liquid pipe increases, the treatment liquid in the treatment liquid pipe that has been positively charged is de-energized.

By the above, in the treatment liquid discharge step, the treatment liquid in a state where the electric charge is removed can be ejected from the discharge port. Thereby, it is possible to prevent or suppress the occurrence of electrostatic discharge accompanying the discharge of the processing liquid to the substrate. Therefore, it is possible to suppress or prevent damage on the main surface of the substrate.

In one embodiment of the present invention, the conductive discharge step includes a step of removing a circulating pipe that circulates the treatment liquid in the tank.

Even when the treatment liquid from the treatment liquid nozzle is not discharged (when the treatment liquid discharge step is not performed), the treatment liquid in the circulation pipe circulates. Therefore, when the treatment liquid from the treatment liquid nozzle is not discharged (when the treatment liquid discharge step is not performed), the treatment liquid in the circulation pipe is easily charged by friction with the pipe wall of the circulation pipe.

According to this method, the treatment liquid is ejected from the discharge port toward the conductive portion in a continuous flow state, and the discharge port and the conductive portion are connected by the liquid by the treatment liquid, whereby the treatment liquid in the circulation pipe can be well removed. .

In one embodiment of the present invention, the conductive discharge step includes a step performed before the processing liquid discharge step.

According to this method, the conductive discharge step is performed before the treatment liquid discharge step. When a long time elapses from the end of the conductive discharge step, the amount of charge contained in the treatment liquid in the treatment liquid pipe increases. When the interval between the conductive discharge step and the treatment liquid discharge step is short, the amount of charge contained in the treatment liquid in the treatment liquid pipe is small. In this case, in the treatment liquid discharge step, the treatment liquid in a state where the electric charge is sufficiently removed can be ejected from the discharge port.

According to an embodiment of the present invention, the substrate holding step of holding the substrate by the substrate holding unit is further included. Further, the conductive discharge step may include a step performed after the substrate holding step and before the processing liquid discharging step.

According to this method, since the conductive discharge step is performed after the substrate holding step, it can be inferred that the interval between the conductive discharge step and the treatment liquid discharge step is a short interval, and in this case, the charge contained in the treatment liquid in the treatment liquid pipe is The amount is small. In this case, in the treatment liquid discharge step, the treatment liquid in a state where the electric charge is sufficiently removed can be ejected from the discharge port.

In one embodiment of the present invention, the treatment liquid discharge step is started within less than 20 seconds after the completion of the conductive discharge step.

According to this method, since the discharge of the treatment liquid from the discharge port is started within less than 20 seconds after the completion of the conductive discharge step, the treatment liquid in a state in which almost no electric charge is contained can be discharged from the discharge port.

In the embodiment of the present invention, the processing liquid discharging step includes a step of discharging the processing liquid from the ejection port in a state where the processing liquid nozzle is disposed at the first position, and the first position is from the foregoing The processing liquid discharged from the ejection port is supplied to the main surface of the substrate, and the substrate is held by the substrate holding unit housed in the chamber. Then, the conductive discharge step may include a step of discharging the processing liquid from the discharge port in a state where the processing liquid nozzle is disposed at a second position different from the first position.

According to this method, in the treatment liquid discharge step, the treatment liquid is discharged from the discharge port in a state where the treatment liquid nozzle is disposed at the first position, and the treatment liquid is supplied to the main surface of the substrate. Further, in the conductive discharge step, the treatment liquid is discharged from the discharge port in a state where the treatment liquid nozzle is disposed at the second position, and the treatment liquid is supplied to the conductive portion. By this, in the process liquid discharge process, the process liquid discharged from the discharge port can be surely supplied to the main surface of the substrate, and the process liquid discharged from the discharge port can be surely supplied to the conductive portion in the conductive discharge step. .

The present invention provides a substrate processing system for processing a substrate using a processing liquid, comprising: a chamber; a substrate holding unit housed in the chamber for holding the substrate; and a processing liquid nozzle housed in the chamber And a processing liquid supply unit having a processing liquid pipe internally connected to the ejection port for supplying a processing liquid to the processing liquid nozzle; the conductive portion is disposed in the chamber; and the grounding structure is The conductive portion is grounded; and the control device controls the processing liquid supply unit; the control device performs a process of discharging a processing liquid from the processing liquid nozzle toward a main surface of the substrate; and discharging the conductive liquid; In the non-execution of the treatment liquid discharge step, the treatment liquid is discharged from the discharge port toward the conductive portion in a continuous flow state, and the discharge port and the conductive portion are in fluid communication by the treatment liquid.

According to this configuration, when the processing liquid discharge step is not performed, the processing liquid is ejected from the ejection port toward the conductive portion in a continuous flow state, and in this state, the ejection port and the conductive portion are in fluid contact by the treatment liquid. In the case where the treatment liquid in the treatment liquid pipe is positively or negatively charged, electrons are passed through the treatment liquid between the discharge port and the conductive portion due to a potential difference generated between the treatment liquid in the treatment liquid pipe and the conductive portion. mobile.

When the treatment liquid in the treatment liquid pipe is negatively charged, electrons contained in the treatment liquid in the treatment liquid pipe move to the conductive portion via the treatment liquid and escape. Thereby, the treatment liquid in the treatment liquid pipe which has been negatively charged is neutralized.

Further, when the treatment liquid in the treatment liquid pipe is positively charged, the electrons included in the conductive portion move into the treatment liquid pipe via the ground structure and the treatment liquid. Since the number of electrons contained in the treatment liquid in the treatment liquid pipe increases, the treatment liquid in the treatment liquid pipe that has been positively charged is de-energized. Therefore, the treatment liquid in the treatment liquid pipe can be well removed.

By the above, in the treatment liquid discharge step, the treatment liquid in a state where the electric charge is removed can be ejected from the discharge port. Thereby, it is possible to prevent or suppress the occurrence of electrostatic discharge accompanying the discharge of the processing liquid to the substrate. Therefore, it is possible to suppress or prevent damage on the main surface of the substrate.

In one embodiment of the present invention, the treatment liquid piping includes a circulation pipe that circulates the treatment liquid in the tank. Then, the control device may remove the treatment liquid in the circulation pipe in the conductive discharge step.

Even when the treatment liquid from the treatment liquid nozzle is not discharged (when the treatment liquid discharge step is not performed), the treatment liquid in the circulation pipe circulates. Therefore, when the treatment liquid from the treatment liquid nozzle is not discharged (when the treatment liquid discharge step is not performed), the treatment liquid in the circulation pipe is easily charged by friction with the pipe wall of the circulation pipe.

According to this configuration, the treatment liquid is discharged from the discharge port toward the conductive portion in a continuous flow state, and the discharge port and the conductive portion are connected by the liquid by the treatment liquid, whereby the treatment liquid in the circulation pipe can be satisfactorily removed. .

In one embodiment of the invention, the control device performs the conductive discharge step before the treatment liquid discharge step.

According to this configuration, the conductive discharge step is performed before the treatment liquid discharge step. When a long time elapses from the end of the conductive discharge step, the amount of charge contained in the treatment liquid in the treatment liquid pipe increases. When the interval between the conductive discharge step and the treatment liquid discharge step is short, the amount of charge contained in the treatment liquid in the treatment liquid pipe is small. In this case, in the treatment liquid discharge step, the treatment liquid in a state where the electric charge is sufficiently removed can be ejected from the discharge port.

In one embodiment of the present invention, the control device further performs a substrate holding step of holding the substrate by the substrate holding unit. Then, the control device may perform the conductive discharge step after the substrate holding step and before the processing liquid discharging step.

According to this configuration, since the conductive discharge step is performed after the substrate holding step, it can be inferred that the interval between the conductive discharge step and the treatment liquid discharge step is a short interval, and in this case, the charge contained in the treatment liquid in the treatment liquid pipe is The amount is small. In this case, in the treatment liquid discharge step, the treatment liquid in a state where the electric charge is sufficiently removed can be ejected from the discharge port.

In one embodiment of the present invention, the processing liquid nozzle is provided to be movable between a first position and a second position, and the first position is to supply a processing liquid discharged from the ejection port to a main body of the substrate At a position of the surface, the substrate is held by a substrate holding unit housed in the chamber, and the second position is different from the first position, and the processing liquid discharged from the ejection port is supplied to the conductive The location of the department. In the control device, the processing liquid ejecting step may be performed in a state where the processing liquid nozzle is disposed at the first position, and the conductive ejection may be performed in a state where the processing liquid nozzle is disposed in the second position. Process.

According to this configuration, in the treatment liquid discharge step, the treatment liquid is discharged from the discharge port in a state where the treatment liquid nozzle is disposed at the first position, and the treatment liquid is supplied to the main surface of the substrate. Further, in the conductive discharge step, the treatment liquid is discharged from the discharge port in a state where the treatment liquid nozzle is disposed at the second position, and the treatment liquid is supplied to the conductive portion. By this, in the process liquid discharge process, the process liquid discharged from the discharge port can be surely supplied to the main surface of the substrate, and the process liquid discharged from the discharge port can be surely supplied to the conductive portion in the conductive discharge step. .

In one embodiment of the present invention, the substrate processing system further includes a jug disposed on a side of the substrate holding unit for receiving a processing liquid discharged from the ejection port. Then, the conductive portion may be provided to the kettle.

According to this configuration, in the conductive discharge step, the treatment liquid discharged from the treatment liquid nozzle is received by the pot. The conductive portion is disposed in the kettle. Therefore, it is possible to satisfactorily realize the configuration in which the discharge port and the conductive portion are connected to each other by the treatment liquid, whereby the treatment liquid in the treatment liquid pipe can be satisfactorily removed in the conductive discharge step.

In an embodiment of the present invention, the kettle comprises a container-shaped pot body. Then, the conductive portion may be formed on the entire body of the pot.

According to this configuration, since the conductive portion is formed integrally with the pot body, it is possible to relatively easily realize a configuration in which the discharge port and the conductive portion are connected to each other by the treatment liquid.

In an embodiment of the present invention, the kettle comprises a container-shaped pot body. Further, in the pot body, the conductive portion is partially provided in a region including a liquid level of the treatment liquid discharged from the discharge port, and a portion other than the conductive portion in the pot body may be used. Formed by an insulating material.

According to this configuration, in the pot body, a conductive portion is formed in a region including the liquid level of the treatment liquid discharged from the discharge port of the pot body, and portions other than the region are formed using an insulating material. Even if the entire body of the pot is not made into a conductive portion, the discharge port and the conductive portion can be connected to each other by the treatment liquid.

In an embodiment of the present invention, the kettle comprises a container-shaped pot body. Then, the conductive portion may also include a conductive bar extending in the inner space of the pot body.

According to this configuration, the treatment liquid discharged from the discharge port is supplied to the bus bar, whereby the discharge port and the conductive portion can be connected to each other by the treatment liquid in a relatively simple manner.

In one embodiment of the present invention, the kettle includes a container-shaped pot body and a storage portion that can store the processing liquid sprayed from the discharge port toward the internal space of the pot body. Then, the conductive portion may further include a conductive strip extending in an inner space of the pot body. Further, the storage portion may be provided such that the treatment liquid stored in the storage portion contacts the conductive strip.

According to this configuration, the processing liquid discharged from the discharge port can be stored in the storage portion, and the conductive strip liquid contacts the stored processing liquid. Thereby, it is possible to realize a configuration in which the discharge port and the conductive portion are reliably connected to each other by the continuous flow of the treatment liquid discharged from the discharge port.

The above and other objects, features, and advantages of the invention will be apparent from the description of the appended claims.

1‧‧‧Substrate processing system

2‧‧‧Processing unit

3‧‧‧Control device

4‧‧‧ Fluid Box

5‧‧‧ frame

6‧‧‧Storage box

7‧‧‧ chamber

8‧‧‧Rotating chuck (substrate holding unit)

9‧‧‧Drug nozzle (treatment liquid nozzle)

9a, 9b‧‧‧ spout

10‧‧‧Drug supply unit (treatment liquid supply unit)

11‧‧‧cleaning liquid supply unit

12‧‧‧Processing cup

12a‧‧‧Upper

13‧‧‧Standing pot (pot)

14‧‧‧ partition wall

15‧‧‧Rotary motor

16‧‧‧Rotary axis

17‧‧‧Spinning base

17a‧‧‧Upper surface

18‧‧‧ Maintaining components

20‧‧‧SPM piping (treatment liquid piping)

22‧‧‧Nozzle arm

23‧‧‧Nozzle mobile unit

24‧‧‧Mixed Department

25‧‧‧sulfuric acid supply unit

26‧‧‧ Hydrogen peroxide water supply unit

27‧‧‧ sulfuric acid tank (tank)

28‧‧‧Recycling piping (treatment liquid piping)

28a‧‧‧ upstream end

28b‧‧‧ downstream end

29‧‧‧ Liquid delivery device

30‧‧‧temperature regulator

31‧‧‧Filter

32‧‧‧ Sulfuric acid piping (treatment liquid piping)

32a‧‧‧ one end of sulfuric acid piping

32b‧‧‧The other end of the sulfuric acid piping

33‧‧‧ sulfuric acid valve

34‧‧‧Supply Department

35‧‧‧Connecting Department

36‧‧‧Return Department

38‧‧‧Hydrogen peroxide water piping (treatment liquid piping)

39‧‧‧Hydrogen peroxide water valve

43‧‧‧Clean liquid nozzle

44‧‧‧cleaning fluid piping

45‧‧‧cleaning valve

51‧‧‧ pot body

52‧‧‧Internal space

53‧‧‧Opening

54‧‧‧Export

56‧‧‧Lead part

57‧‧‧ sloping part

58‧‧‧ horizontal part

61‧‧‧ side wall

62‧‧‧Upper wall

63‧‧‧ bottom wall

64‧‧‧First side wall

65‧‧‧second side wall

66‧‧‧Upper side wall

67‧‧‧First inclined wall

68‧‧‧First horizontal wall

69‧‧‧lower side wall

70‧‧‧ second horizontal wall

71‧‧‧Second inclined wall

72‧‧‧ third horizontal wall

73‧‧‧ Grounding structure

74‧‧‧Discharge piping

74a‧‧‧ one end of the discharge pipe

101‧‧‧Electrical Department

102‧‧‧Insulation

201, 301‧‧‧ Conductive strip

302‧‧‧Reservation Department

A1‧‧‧Rotation axis

C‧‧‧Substrate container

CR‧‧‧Substrate transfer robot

D1‧‧‧First horizontal direction

IR‧‧‧ indexing robot

LP‧‧‧Carriage

P1‧‧‧ Processing position (first position)

P2‧‧‧ Standby position (second position)

P21‧‧‧On standby position

P22‧‧‧Next standby position

PL‧‧‧Drug position

W‧‧‧Substrate

SPM‧‧‧ Sulfuric Acid Hydrogen Peroxide Mixture

1 is a schematic plan view for explaining an internal layout of a substrate processing system according to an embodiment of the present invention.

FIG. 2 is a schematic view for explaining a configuration example of a processing unit provided in the substrate processing system.

Figure 3 is a cross-sectional view of the standby kettle.

Fig. 4 is a block diagram for explaining an electrical configuration of a main portion of the above substrate processing system.

Fig. 5 is a flow chart for explaining an example of substrate processing performed by the processing unit.

Fig. 6 is a graph showing the relationship between the discharge of SPM and the charge amount of H ₂ SO ₄ in the circulation piping.

Fig. 7 is a cross-sectional view showing a standby pot of the first modification.

Fig. 8 is a cross-sectional view showing a standby pot of a second modification.

Fig. 9 is a cross-sectional view showing a standby pot of a third modification.

Fig. 10 is a cross-sectional view showing a standby pot of a fourth modification.

Figure 11 is a cross-sectional view showing a standing kettle of a fifth modification.

Figure 12 is a cross-sectional view showing a standing kettle of a sixth modification.

Figure 13 is a cross-sectional view showing a standing kettle of a seventh modification.

Embodiments of the present invention will be described in detail below with reference to the drawings.

1 is a schematic plan view for explaining an internal layout of a substrate processing system 1 according to an embodiment of the present invention. The substrate processing system 1 is a one-chip device in which a disk-shaped substrate W such as a semiconductor wafer is processed one by one.

The substrate processing system 1 includes a plurality of load port LPs for holding a plurality of substrate containers C for accommodating the substrate W, and a plurality of processing units 2 for processing the liquids such as chemical liquids. The substrate W is transported by the carrier 埠LP; the transfer robot transports the substrate W from the plurality of carriers 埠LP to the plurality of processing units 2; and the control device 3 controls the substrate processing system 1. The transport robot includes an indexer robot IR that transports the substrate W on the path between the carrier 埠LP and the processing unit 2, and a substrate transport robot CR that uses the substrate W in the index robot IR and the processing unit. 2 on the path between the transfer.

The substrate processing system 1 includes a plurality of fluid cartridges 4 for accommodating a sulfuric acid valve 33 (see FIG. 2) and a hydrogen peroxide water valve 39 (see FIG. 2). The processing unit 2 and the fluid cartridge 4 are disposed in a frame 5 of the substrate processing system 1 and covered by the housing 5 of the substrate processing system 1. In the example of FIG. 1, the storage case 6 in which the sulfuric acid tank (tank) 27 for storing the processing liquid is accommodated is disposed outside the casing 5 of the substrate processing system 1, but may be housed in the frame. In body 5. The storage case 6 may be one of a plurality of cartridges corresponding to the plurality of fluid cartridges 4, or may be a plurality of cartridges provided in one-to-one correspondence with the fluid cartridges 4.

The twelve processing units 2 are formed into four towers arranged to surround the substrate transport robot CR in plan view. Each tower is included in three processing units stacked on top of each other. The four storage boxes 6 correspond to four towers, respectively. Similarly, four fluid cartridges 4 correspond to four towers, respectively. The chemical solution stored in the sulfuric acid tank 27 in each of the storage boxes 6 is supplied to the three processing units 2 corresponding to the storage case 6 via the fluid cartridge 4 corresponding to the storage case 6.

FIG. 2 is a schematic view for explaining a configuration example of the processing unit 2.

The processing unit 2 includes a box-shaped chamber 7 having an internal space, and a rotating chuck (substrate holding unit) 8 for holding a substrate W in a horizontal posture in the chamber 7, and winding the substrate W through the substrate W. The vertical rotation axis A1 of the center rotates; the liquid medicine nozzle (treatment liquid nozzle) 9 is for discharging the liquid medicine on the upper surface (main surface) of the substrate W held by the rotary chuck 8; the liquid supply unit (treatment liquid The supply unit 10 is for supplying the chemical liquid to the chemical liquid nozzle 9; the rinse liquid supply unit 11 is for supplying the cleaning liquid to the upper surface of the substrate W held by the rotary chuck 8; The processing cup 12 surrounds the rotating chuck 8; the standby pot (pot) 13 is disposed around the rotating chuck 8 (around the processing cup 12) in plan view; and the grounding structure 73 is Ground the standby pot 13. As shown in FIG. 2, the chamber 7 includes a box-shaped partition wall 14.

A chuck which holds the substrate horizontally and holds the substrate horizontally is used as the rotating chuck 8. Specifically, the rotary chuck 8 includes: a spin motor 15; a rotary shaft 16 integrated with a drive shaft of the rotary motor 15; and a disk-shaped spin base 17 It is mounted substantially horizontally on the upper end of the rotating shaft 16.

The spin base 17 includes a horizontal circular upper surface 17A having an outer diameter larger than the outer diameter of the substrate W. The spin base 17 is formed using, for example, an insulating material. A plurality of (three or more, for example, six) holding members 18 are disposed on the peripheral portion of the upper surface 17A. On the peripheral edge portion of the upper surface of the spin base 17, a plurality of grip members 18 are disposed on the circumference corresponding to the outer peripheral shape of the substrate W at an appropriate interval, for example, at equal intervals. The holding member 18 is formed, for example, using a conductive material. The holding member 18 is grounded via a grounding structure (which is equivalent to the grounding structure 73 to be described later).

The chemical liquid nozzle 9 is a straight nozzle that ejects the chemical liquid in a continuous flow state. The chemical liquid nozzle 9 is ejected to the nozzle arm 22 by, for example, a vertical posture in which the processing liquid is ejected in a direction perpendicular to the upper surface of the substrate W. A discharge port 9a for discharging the chemical liquid is set at the lower end of the chemical liquid nozzle 9. The discharge port 9a discharges the chemical liquid downward. That is, the chemical liquid nozzle 9 is a downward nozzle. In the present embodiment, SPM (sulfuric acid/hydrogen peroxide mixture; that is, a mixture containing H ₂ SO ₄ (sulfuric acid) and H ₂ O ₂ (hydrogen peroxide)) is used. The chemical liquid discharged from the chemical liquid nozzle 9 is used.

The nozzle arm 22 extends in the horizontal direction and is provided to be swingable about a rotation axis (not shown) extending in the vertical direction around the rotary chuck 8. The nozzle moving unit 23 rotates the nozzle arm 22 about the rotation axis, thereby horizontally moving the chemical liquid nozzle 9 along the trajectory passing through the central portion of the upper surface of the substrate W in plan view. The nozzle moving unit 23 horizontally moves the chemical liquid nozzle 9 between the processing position (first position) P1 and the standby position (second position) P2, which refers to the liquid medicine discharged from the chemical liquid nozzle 9 The position where the upper surface of the substrate W is liquid is the position at which the chemical liquid nozzle 9 is set to be positioned around the rotary chuck 8 in plan view. In the present embodiment, the processing position P1 is, for example, a chemical liquid ejected from the chemical liquid nozzle 9 at a central position where the liquid crystal is immersed in the central portion of the upper surface of the substrate W.

The standby position P2 includes an upper standby position P21 (see FIG. 3) and a lower standby position P22 (see FIG. 3) set below the upper standby position P21. The nozzle moving unit 23 raises and lowers the nozzle arm 22 to raise and lower the chemical liquid nozzle 9 between the upper standby position P21 and the lower standby position P22.

The chemical solution supply unit 10 includes a mixing unit 24 that is connected to the chemical liquid nozzle 9 via an SPM pipe (treatment liquid pipe) 20, a sulfuric acid supply unit 25 that supplies H ₂ SO ₄ to the mixing unit 24, and hydrogen peroxide. The water supply unit 26 supplies H ₂ O ₂ to the mixing unit 24.

The sulfuric acid supply unit 25 includes a sulfuric acid tank 27 for storing H ₂ SO ₄ supplied to the mixing unit 24, and a circulation pipe (treatment liquid pipe) 28 for circulating H ₂ SO ₄ in the sulfuric acid tank 27; 29, the H ₂ SO ₄ in the sulfuric acid tank 27 is sent to the circulation pipe 28; the temperature regulator 30 adjusts the temperature of the H ₂ SO ₄ supplied from the sulfuric acid tank 27 to the mixing portion 24; the filter 31 The foreign matter in the H ₂ SO ₄ supplied from the sulfuric acid tank 27 to the mixing unit 24 is removed, and the sulfuric acid pipe (treatment liquid pipe) 32 is connected, and one end 32a is connected to the circulation pipe 28 and the other end 32b is connected to the mixing portion 24. A sulfuric acid valve 33 that opens and closes the sulfuric acid pipe 32 is inserted into the sulfuric acid pipe 32.

The upstream end 28A and the downstream end 28b of the circulation pipe 28 are connected to the sulfuric acid tank 27. The circulation pipe 28 includes a supply unit 34 that draws H ₂ SO ₄ in the sulfuric acid tank 27 and guides it into the circulation pipe 28; the connection portion 35 is connected to one end 32a of the sulfuric acid pipe 32; and a return portion 36, The sulfuric acid that has passed through the connection portion 35 is led to the sulfuric acid tank 27.

The liquid feeding device 29 is inserted into the supply unit 34. The liquid feeding device 29 is, for example, a pump. The pump system inhales H ₂ SO ₄ in the sulfuric acid tank 27 and ejects the inhaled H ₂ SO ₄ . The liquid feeding device 29 may be a pressurizing device that sends the H ₂ SO ₄ in the sulfuric acid tank 27 to the circulation pipe 28 by raising the gas pressure in the sulfuric acid tank 27.

The temperature regulator 30 is inserted into the supply unit 34. The temperature regulator 30 can also be disposed in the sulfuric acid tank 27. The temperature regulator 30 temperature-adjusts (heats or cools) the H ₂ SO ₄ at a temperature ranging from a temperature higher than room temperature (for example, about 23 ° C) to a temperature lower than room temperature. The H ₂ SO ₄ flowing through the supply unit 34 is supplied to the return unit 36 and returned to the sulfuric acid tank 27 . The sulfuric acid valve 33 is opened, whereby the H ₂ SO ₄ flowing through the supply portion 34 is supplied to the mixing portion 24.

The hydrogen peroxide water supply unit 26 includes a hydrogen peroxide water pipe (treatment liquid pipe) 38, and is supplied with H ₂ O ₂ from a hydrogen peroxide water supply source (not shown) and connected to the mixing unit 24; The hydrogen peroxide water valve 39 is used to open and close the hydrogen peroxide water pipe 38. The mixing unit 24 is supplied with H ₂ O ₂ at room temperature (about 25° C.) which is not temperature-controlled by the hydrogen peroxide water pipe 38.

The standby pot 13 is a box-shaped pot for receiving the chemical liquid discharged from the chemical liquid nozzle 9 disposed at the standby position P2. The discharge pipe 74 is connected to the bottom of the standby pot 13. The wall of the discharge pipe 74 is formed using an insulating material. The chemical liquid received by the standby pot 13 is sent to a waste liquid processing apparatus (not shown) outside the machine via the discharge pipe 74. Therefore, the SPM ejected by the standby pot 13 is not supplied to the substrate W.

The cleaning liquid supply unit 11 includes a cleaning liquid nozzle 43. The cleaning liquid nozzle 43 is, for example, a straight nozzle that ejects the liquid in a continuous flow state, and the discharge port of the cleaning liquid nozzle 43 is fixedly disposed above the rotating chuck 8 toward the central portion of the upper surface of the substrate W. The cleaning liquid nozzle 43 is connected to the cleaning liquid pipe 44, and the cleaning liquid pipe 44 is supplied with a cleaning liquid from the cleaning liquid supply source. A cleaning liquid valve 45 for stopping the supply/supply of the cleaning liquid from the cleaning liquid nozzle 43 is inserted in the middle of the cleaning liquid pipe 44. When the cleaning liquid valve 45 is opened, the cleaning liquid supplied from the cleaning liquid pipe 44 to the cleaning liquid nozzle 43 is discharged from the discharge port set at the lower end of the cleaning liquid nozzle 43. Further, when the cleaning liquid valve 45 is closed, the supply of the cleaning liquid from the cleaning liquid pipe 44 to the cleaning liquid nozzle 43 is stopped. Although the cleaning liquid may be, for example, deionized water (DIW), it is not limited to DIW, and may be carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, and diluted concentration (for example, about 10 ppm to 100 ppm). Any of the hydrochloric acid waters.

Further, the cleaning liquid supply unit 11 may be provided with a cleaning liquid nozzle moving device that moves the cleaning liquid nozzle 43 to thereby position the cleaning liquid on the upper surface of the substrate W on the substrate W. Internal scanning.

The processing cup 12 is disposed more outward than the substrate W held by the rotating chuck 8 (a direction away from the rotation axis A1). The processing cup 12 is formed, for example, using an insulating material. The processing cup 12 surrounds the side of the spin base 17. When the processing liquid is supplied to the substrate W in a state where the substrate W is rotated by the rotary chuck 8, the processing liquid supplied to the substrate W is cleaved around the substrate W. When the processing liquid is supplied to the substrate W, the upper end portion 12a of the processing cup 12 that has been opened upward is disposed above the spin base 17. Therefore, the treatment liquid or the treatment liquid such as water discharged around the substrate W is received by the treatment cup 12. Then, the processing liquid that has been taken up by the processing cup 12 is sent to a recovery device or a waste liquid device (not shown).

3 is a cross-sectional view of the standby pot 13.

The standby pot 13 includes, for example, a bottomed and box-shaped pot body 51. The long and hook-shaped internal space 52 is divided by the pot body 51 in the lateral direction (predetermined first horizontal direction D1). The pot body 51 has an upper opening 53 and a discharge port 54 that communicate with the internal space 52. The inner space 52 has a vertical portion 56 extending continuously from the upper opening 53 in the vertical direction, an inclined portion 57 extending obliquely downward from the lower end of the vertical portion 56, and a horizontal portion 58 extending from the front end of the vertical portion 56. It extends in the first horizontal direction D1 and continues to the discharge port 54.

The body 51 includes a side wall 61 that surrounds the side of the inner space 52, an upper wall 62 that forms the upper surface of the inner space 52, and a bottom wall 63 that closes the bottom surface of the inner space 52. The upper opening 53 is formed in the upper wall 62, and the discharge port 54 is formed in the bottom wall 63.

The side wall 61 includes a first side wall 64 extending in a vertical direction, and a second side wall 65 facing in a lateral direction with respect to the first side wall 64. The second side wall 65 includes an upper side wall 66 extending vertically downward from the upper wall 62. The first inclined wall 67 extends obliquely downward from the lower end of the upper side wall 66. The first horizontal wall 68 is inclined from the first side. The lower end of the wall 67 extends in a predetermined first horizontal direction D1; and the lower side wall 69 extends downward from the front end of the first horizontal wall 68 in the vertical direction to be connected to the bottom wall 63. In the example of FIG. 3, the upper side wall 66, the first inclined wall 67, the first horizontal wall 68, and the lower side wall 69 are integrally provided using a conductive material such as conductive PEEK (polyetheretherketone).

The bottom wall 63 includes: a second horizontal wall 70 extending from a lower end of the first side wall 64 in a first horizontal direction D1; a second inclined wall 71 extending obliquely downward from a front end of the upper side wall 66; and a third level The wall 72 extends from the lower end of the upper side wall 66 in the first horizontal direction D1. The discharge port 54 is formed in the third horizontal wall 72. In the example of FIG. 3, the second horizontal wall 70, the second inclined wall 71, and the third horizontal wall 72 are integrally provided using a conductive material such as conductive PEEK.

The vertical portion 56 is divided by the upper wall 62, the first side wall 64, the upper side wall 66, and the second horizontal wall 70. The inclined portion 57 is divided by the first inclined wall 67 and the second inclined wall 71. The horizontal portion 58 is divided by the first horizontal wall 68, the lower side wall 69, and the bottom wall 63.

In the example of Fig. 3, the body 51 (i.e., the side wall 61, the upper wall 62, and the bottom wall 63) are integrally provided. That is, the pot body 51 is electrically conductive. In the present embodiment, the pot body 51 constitutes a conductive portion. The grounding structure 73 grounds the kettle body 51.

The discharge port 54 of the standby pot 13 is connected to one end 74a of the discharge pipe 74. The discharge pipe 74 is formed using an insulating material such as PTFE (polytetrafluoroethylene) or PFA (perfluoroalkoxyethylene). The other end of the discharge pipe 74 is connected to a waste liquid processing apparatus outside the machine.

In a state where the chemical liquid nozzle 9 is disposed at the lower standby position P22, the discharge port 9a formed at the lower end of the chemical liquid nozzle 9 is positioned below the upper opening 53 of the standby pot 13. In the conductive discharge step S3 (see FIG. 5) to be described later, in the state where the chemical liquid nozzle 9 is placed at the lower standby position P22, the chemical liquid is discharged from the discharge port 9a for pre-dispensing. The chemical liquid discharged from the discharge port 9a is applied to the second horizontal wall 70 of the bottom wall 63, and flows along the second inclined wall 71 toward the discharge port 54. Next, the chemical liquid that has reached the discharge port 54 flows into the discharge pipe 74 from the discharge port 54, and the discharge pipe 74 is led to the waste liquid processing facility where it is treated by the waste liquid.

Specifically, in the conductive discharge step S3, the chemical liquid is ejected from the discharge port 9a of the chemical liquid nozzle 9 toward the internal space 52 of the standby pot 13 in a continuous flow. The chemical liquid discharged from the discharge port 9a is immersed in the second horizontal wall 70 of the bottom wall 63, and flows along the second inclined wall 71 toward the discharge port 54. As shown in FIG. 3, in the discharge state of the chemical liquid, the discharge port 9a and the electrically conductive pot body 51 are connected via a continuous flow of the chemical liquid discharged from the discharge port 9a.

Specifically, the sulfuric acid valve 33 (see FIG. 2) and the hydrogen peroxide water valve 39 (see FIG. 2) are simultaneously opened, whereby the SPM is ejected from the discharge port 9a in a continuous flow. At this time, the discharge port 9a and the electrically conductive pot body 51 are connected via a continuous flow of SPM ejected from the discharge port 9a.

In addition, in each of the chemical liquid pipes (in the SPM pipe 20, in the sulfuric acid pipe 32, in the circulation pipe 28, and in the hydrogen peroxide water pipe 38), each of the chemical liquids (SPM, H ₂ SO _{4 ,} and H ₂ O ₂ ) is used. Confidential state. In addition, since the sulfuric acid valve 33 (see FIG. 2) and the hydrogen peroxide water valve 39 (see FIG. 2) are in an open state, the inside of the SPM pipe 20 and the sulfuric acid pipe 32 and the hydrogen peroxide water pipe 38 are also The sulfuric acid piping 32 and the circulating piping 28 are in communication with each other. Therefore, in each of the chemical liquid pipes, the chemical liquid is connected by a liquid.

4 is a block diagram for explaining an electrical configuration of a main part of the substrate processing system 1.

The control device 3 is configured using, for example, a microcomputer. The control device 3 includes an arithmetic unit such as a CPU (Central Processing Unit), a fixed memory device, a storage unit such as a hard disk drive, and an input/output unit. The memory unit includes a recording medium readable by a computer, and the computer records a computer program executed by the arithmetic unit. In the recording medium, a step group in which the control device 3 executes a cleaning process to be described later is incorporated.

The control device 3 controls the operations of the rotary motor 15, the nozzle moving unit 23, the liquid supply device 29, the temperature adjuster 30, and the like in accordance with a program determined in advance. Further, the control device 3 controls the opening and closing operations of the sulfuric acid valve 33, the hydrogen peroxide water valve 39, the cleaning liquid valve 45, and the like in accordance with a program determined in advance.

FIG. 5 is a flow chart for explaining an example of substrate processing performed by the processing unit 2. A substrate processing example will be described with reference to Figs. 1 to 5 .

This substrate processing example is a resist removal treatment in which a resist is removed from the upper surface (main surface) of the substrate W. When the substrate W is subjected to the substrate processing example by the processing unit 2, the substrate W after the high-dose ion implantation process is carried into the inside of the chamber 7 (step S1 in Fig. 5). The loading of the substrate is performed in a state where the chemical liquid nozzle 9 is retracted to the standby position P2 (see FIG. 3). The substrate W to be carried in is charged by the pre-process (processing by a dry etcher), and the amount of charge of the substrate W may be large.

In the state in which all of the nozzles and the like are retracted from above the rotary chuck 8, the control device 3 allows the hand of the substrate transfer robot CR (see FIG. 1) holding the substrate W to enter the inside of the chamber 7. The substrate W is delivered to the spin chuck 8 with the surface (device forming surface) of the substrate W facing upward.

The control device 3 starts the rotation of the substrate W by the rotary motor 15 (step S2 in FIG. 5, substrate rotation step). The substrate W is raised to a predetermined liquid processing speed (in the range of 300 rpm to 1500 rpm, for example, 500 rpm), and is maintained at the liquid processing speed.

The conductive discharge step S3 is performed before the execution of the SPM discharge step S4 described later.

When the substrate W held by the rotating chuck 8 is charged, in the SPM discharging step S4, when the SPM is ejected from the ejection opening 9a of the chemical liquid nozzle 9 toward the upper surface of the substrate W, the upper surface of the substrate W is used. Contact with the SPM has the effect of generating an electrostatic discharge near the site where the SPM has been liquided or near the site where the SPM has been liquid. As a result, there is a case where pattern breakage occurs and the treatment liquid is discharged to cause damage to the substrate. In the substrate processing example, before the SPM discharge step S4 is performed, the chemical solution in the chemical liquid pipe (SPM in the SPM pipe 20 and H _{2 in the} sulfuric acid pipe 32) is performed. SO _4, circulation piping H ₂ SO ₄ and H ₂ O ₂₎ electrically conductive discharge step S3, a power supply in addition to the completion of the SPM 38 in addition to hydrogen peroxide 28 pipe.

Specifically, in the conductive discharge step S3, the control device 3 simultaneously opens the sulfuric acid valve 33 and the hydrogen peroxide water valve 39. As shown in FIG. 3, H ₂ SO ₄ flowing through the inside of the sulfuric acid pipe 32 is supplied to the mixing unit 24, and H ₂ O ₂ flowing through the hydrogen peroxide water pipe 38 is supplied to the mixing unit 24. In the mixing unit 24 and the sulfuric acid pipe 32, H ₂ SO _{4 is} mixed with H ₂ O _{2 to} generate a high temperature (for example, 160 ° C) SPM. The SPM is ejected from the discharge port 9a of the chemical liquid nozzle 9 toward the internal space 52 of the standby pot 13 in a continuous flow. The SPM ejected from the ejection port 9a is applied to the second horizontal wall 70 of the bottom wall 63, and flows along the second inclined wall 71 toward the discharge port 54. In the discharge state of the SPM, the discharge port 9a and the pot body 51 having conductivity are connected via a continuous flow of SPM ejected from the discharge port 9a. Further, in each of the chemical liquid pipes (in the SPM pipe 20, in the sulfuric acid pipe 32, in the circulation pipe 28, and in the hydrogen peroxide water pipe 38), each of the chemical liquids (SPM, H ₂ SO _{4 ,} and H ₂ O ₂ ) is a liquid. In the dense state, the inside of the SPM pipe 20 and the inside of the sulfuric acid pipe 32 and the hydrogen peroxide water pipe 38 are connected to each other in the sulfuric acid pipe 32 and the circulation pipe 28. Therefore, in each of the chemical liquid pipes, the chemical liquid is connected by a liquid. H Thus, liquid in the liquid pipe of the (SPM pipe the SPM, sulfuric acid within 20 pipe H ₂ SO ₄ in 32, circulation piping H of 28 ₂ SO ₄ and hydrogen peroxide water pipe 38 the ₂ O ₂ In the case of positively charged or negatively charged, the electrons move through the SPM connected between the discharge port 9a and the pot body 51 due to the potential difference generated between the chemical solution in the chemical liquid pipe and the pot body 51.

If the liquid within the liquid pipe (inner SPM pipe SPM, sulfuric pipe H ₂ SO ₄ in 32, circulation piping H of 28 ₂ SO ₄ and through the H ₂ O ₂ in 38 hydrogen peroxide water pipe) negatively charged Then, the electrons contained in the chemical liquid in the chemical liquid pipe are moved to the kettle body 51 via the chemical liquid, and thus escape. Thereby, the liquid medicine in the chemical liquid pipe which has been negatively charged is neutralized.

H Further, if the liquid within the liquid pipe (SPM pipe within 20 SPM, sulfuric pipe H ₂ SO ₄ in 32, circulation piping H of 28 ₂ SO ₄ and hydrogen peroxide water pipe 38 the ₂ O ₂ When positively charged, electrons from the grounding structure 73 are moved into the chemical solution pipe via the pot body 51 and the SPM connected between the discharge port 9a and the pot body 51. Since the number of electrons contained in the chemical liquid in the chemical liquid pipe increases, the chemical liquid in the chemical liquid pipe that has been positively charged is de-energized.

The conductive discharge step S3 serves as a pre-delivery of the chemical liquid from the chemical liquid nozzle 9 and the chemical liquid pipe. When the SPM is ejected from the chemical liquid nozzle 9 for a long period of time, the SPM in the chemical liquid nozzle 9 and the chemical liquid in the chemical liquid pipe (SPM in the SPM pipe and H ₂ SO _{4 in the} sulfuric acid pipe 32) The temperature in the H ₂ SO ₄ in the circulation pipe 28 and the H ₂ O _{2 in the} hydrogen peroxide water pipe 38 is lowered. In this case, the pipe wall of the nozzle pipe of the chemical liquid nozzle 9 and the pipe wall of the chemical liquid pipe (the pipe wall of the SPM pipe 20, the pipe wall of the sulfuric acid pipe 32, and the pipe wall of the hydrogen peroxide water pipe 38) are also included. Wait until the temperature is low. By the pre-delivery of the chemical liquid, the chemical solution having a lowered temperature can be removed from the chemical liquid nozzle 9 or the chemical liquid pipe, and the wall of the nozzle pipe of the chemical liquid nozzle 9 and the wall of the chemical liquid pipe can be made. The temperature rises. As a result, the SPM which has been tempered to a desired high temperature can be ejected from the discharge port 9a from the SPM ejecting step S4.

When a predetermined period of time has elapsed since the discharge of the SPM from the discharge port 9a, the control device 3 closes the sulfuric acid valve 33 and the hydrogen peroxide water valve 39, and stops the SPM discharge from the discharge port 9a.

Next, the control device 3 executes an SPM discharge process (process liquid discharge process, step S4 of FIG. 5). Before the execution of the SPM ejecting step S4, the control device 3 controls the nozzle moving unit 23 to raise the chemical liquid nozzle 9 disposed at the lower standby position P22 (see FIG. 3) to the upper standby position P21 (see FIG. 3). Moreover, the control device 3 moves the chemical liquid nozzle 9 from the standby position P2 (upper standby position P21) to the processing position P1 (refer to FIG. 2), and continues to arrange the chemical liquid nozzle 9 at the processing position P1.

The chemical liquid nozzle 9 is disposed at the processing position P1, and when the rotational speed of the substrate W reaches the liquid processing speed, the control device 3 executes the SPM discharging step S4. Specifically, the control device 3 simultaneously opens the sulfuric acid valve 33 and the hydrogen peroxide water valve 39. Thereby, H ₂ SO ₄ flowing through the inside of the sulfuric acid pipe 32 is supplied to the mixing unit 24, and H ₂ O ₂ flowing through the hydrogen peroxide water pipe 38 is supplied to the mixing unit 24. H ₂ SO ₄ and H ₂ O ₂ are mixed in the mixing unit 24 and the sulfuric acid piping 32 to generate a high temperature (for example, 160 ° C) SPM. This SPM is ejected from the discharge port 9a of the chemical liquid nozzle 9 and is immersed in the central portion of the upper surface of the substrate W. The timing of the discharge of the SPM from the discharge port 9a is a predetermined timing of less than 20 seconds after the completion of the conductive discharge step S3 (a period in which the charge amount of the H ₂ SO ₄ in the circulation pipe 28 is not saturated). The opening timing of the sulfuric acid valve 33 and the hydrogen peroxide water valve 39 is set such that the SPM is ejected from the discharge port 9a at the timing of the discharge.

As described above, the SPM in the chemical liquid pipe is discharged by the SPM from the discharge port 9a in the conductive discharge step S3 (SPM in the SPM pipe 20, H ₂ SO _{4 in the} sulfuric acid pipe 32, and H in the circulation pipe 28). ₂ SO ₄ and H ₂ O _{2 in the} hydrogen peroxide water piping 38 are neutralized. Further, SPM ejection from the discharge port 9a is started within less than 20 seconds after the completion of the conductive discharge step S3. Therefore, the SPM in a state in which almost no electric charge is contained is ejected from the ejection port 9a. Therefore, it is possible to suppress or prevent generation of electrostatic discharge when the SPM is ejected to the substrate W.

The SPM that has been immersed in the central portion of the upper surface of the substrate W is subjected to centrifugal force caused by the rotation of the substrate W and flows outward along the upper surface of the substrate W, and an SPM covering the entire surface of the upper surface of the substrate W is formed on the substrate W. Liquid film. The resist on the substrate W is removed from the substrate W by the SPM contained in the liquid film.

Further, in the SPM ejecting step S4, the control device 3 can also control the nozzle moving unit 23 to move the chemical liquid nozzle 9 between the peripheral position and the center position, and the peripheral position is opposite to the peripheral portion of the upper surface of the substrate W. The central position is opposite to the central portion of the upper surface of the substrate W. In this case, the SPM liquid landing position in the upper surface of the substrate W can scan the entire area of the upper surface of the substrate W.

When a predetermined period of time has elapsed from the start of the discharge of the SPM, the control device 3 closes the sulfuric acid valve 33 and the hydrogen peroxide water valve 39 to stop the SPM discharge from the chemical liquid nozzle 9.

Further, the control device 3 controls the nozzle moving unit 23 to move the chemical liquid nozzle 9 disposed at the processing position P1 to the upper standby position P21 (standby position P2), and the chemical liquid nozzle 9 is lowered and placed in the standby state. Position P22.

Next, a cleaning step S5 of supplying the cleaning liquid to the substrate W is performed. Specifically, the control device 3 opens the cleaning liquid valve 45 to eject the cleaning liquid from the cleaning liquid nozzle 43 toward the central portion of the upper surface of the substrate W. The cleaning liquid sprayed from the cleaning liquid nozzle 43 is attached to the central portion of the upper surface of the substrate W covered by the SPM. The cleaning liquid that has been immersed in the central portion of the upper surface of the substrate W is subjected to centrifugal force caused by the rotation of the substrate W, and flows to the peripheral portion of the substrate W on the upper surface of the substrate W. Thereby, the SPM on the substrate W is flushed to the outside by the cleaning liquid and discharged around the substrate W. Thereby, the SPM and the resist residue in the entire area of the upper surface of the substrate W are washed. When a predetermined period of time has elapsed from the start of the cleaning step S5, the control device 3 closes the cleaning liquid valve 45 to stop the discharge of the cleaning liquid from the cleaning liquid nozzle 43.

Next, a spin dry process of drying the substrate W is performed (step S6 of FIG. 5).

Specifically, in the spin drying step S6, the control device 3 controls the rotary motor 15 so that the rotation speed is faster than the rotation speed from the SPM discharge step S4 to the cleaning step S5 (for example, several thousand rpm). The substrate W is accelerated to rotate the substrate W at a dry rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid adhering to the substrate W is cleaved around the substrate W. Thus, the liquid is removed from the substrate W, and the substrate W is dried.

Next, when a predetermined time elapses from the high-speed rotation of the substrate W, the control device 3 controls the rotary motor 15 to stop the rotation of the substrate W by the rotary chuck 8 (step S7 of FIG. 5).

Next, the substrate W is carried out from the chamber 7 (step S8 of Fig. 5). Specifically, the control device 3 causes the robot hand of the substrate transfer robot CR to enter the inside of the chamber 7. Next, the control device 3 holds the substrate W on the rotary chuck 8 by the robot hand of the substrate transfer robot CR. Thereafter, the control device 3 causes the robot hand of the substrate transfer robot CR to be retracted from the chamber 7. Thereby, the substrate W from which the resist has been removed from the surface (device forming surface) is carried out from the chamber.

In addition, the substrate processing example of FIG. 5 also includes a metal film removing treatment for removing a metal film from the surface of the substrate on which the metal film has been formed.

Fig. 6 is a view showing the relationship between the discharge of the SPM from the chemical liquid nozzle 9 and the charge amount of H ₂ SO ₄ in the circulation pipe 28. Since the charge amount (potential) of H ₂ SO _{4 in} the circulation pipe 28 and the potential (ie, surface potential) of the surface of the substrate W can be regarded as approximately the same, the measured surface potential is used as the circulation pipe in FIG. 6 . The H ₂ SO ₄ charge in 28 is expressed. In this case, a neutralization structure such as a carbon electrode is not used in the circulation piping 28. In the SPM (conductive liquid) discharge state, the discharge port 9a (see FIG. 2) and the upper surface of the substrate W are connected by a continuous flow of SPM, and the continuous flow is formed. The SPM, the SPM liquid film formed on the upper surface of the substrate W, and the conductive holding member are grounded. Therefore, H ₂ SO _{4 in the} circulation piping 28 is neutralized. On the other hand, in the non-discharging state of the SPM (conductive chemical liquid), the H ₂ SO ₄ in the circulation pipe 28 is not de-energized.

On the other hand, the treatment liquid circulates in the circulation pipe 28 even after the discharge state of the SPM changes to the non-discharge state. Therefore, in the non-discharging state of the SPM, the treatment liquid in the circulation pipe 28 is easily charged by friction with the pipe wall of the circulation pipe 28. The charge amount of H ₂ SO ₄ in the circulation pipe 28 is slowly increased and about 20 seconds after the state of change to the non-discharge state, the charge amount of H ₂ SO _{4 in} the circulation pipe 28 is saturated, and thereafter the charge is maintained. The amount goes on. That is, in the example of Fig. 6, the period required for the charge amount of H ₂ SO _{4 in} the circulation pipe 28 after the non-discharge state change state is about 20 seconds. The period of time required for the charge of the H ₂ SO _{4 in} the circulation pipe 28 to be saturated is not limited to about 20 seconds, and the length of the period depends on various types of the substrate W to be processed and the arrangement configuration of the substrate processing system 1. And different.

According to the present embodiment described above, in the non-execution of the SPM ejecting step S4, the SPM is ejected from the ejection port 9a toward the pot body 51 as the conductive portion in a continuous flow. In this state, the discharge port 9a and the pot body 51 are connected via a continuous flow of SPM ejected from the discharge port 9a. Liquid in the liquid pipe (SPM pipe SPM within 20, sulfuric pipe H within 32 ₂ SO _4, circulation piping H within 28 ₂ SO ₄ and hydrogen peroxide water pipe H within 38 ₂ O ₂₎ with In the case of positive or negative charge, electrons move through the SPM connected between the discharge port 9a and the pot body 51 due to the potential difference generated between the chemical solution in the chemical solution pipe and the pot body 51.

When the liquid in the liquid pipe (SPM within SPM pipe, sulfuric acid with H within 32 ₂ SO ₄ tubes, circulation piping H within 28 ₂ SO ₄ and hydrogen peroxide water pipe H within 38 ₂ O ₂₎ is negatively charged At the time, the electrons contained in the chemical solution in the chemical liquid pipe are moved to the kettle body 51 via the chemical liquid and are thus released. Thereby, the liquid medicine in the chemical liquid pipe which has been negatively charged is neutralized.

Further, when the liquid in the liquid pipe (SPM with H within 38 SPM within 20, sulfuric pipe H within 32 ₂ SO _4, circulation piping H within 28 ₂ SO ₄ and hydrogen peroxide water pipe ₂ O ₂ When the battery is positively charged, the electrons from the ground structure 73 move into the chemical liquid pipe via the kettle body 51 and the SPM connected between the discharge port 9a and the kettle body 51. Since the number of electrons contained in the chemical liquid in the chemical liquid pipe is increased, the chemical liquid in the chemical liquid pipe that has been positively charged is neutralized.

As described above, the SPM in the state in which the electric charge is removed can be ejected from the discharge port 9a in the SPM ejecting step S4. Thereby, it is possible to suppress or prevent the occurrence of electrostatic discharge accompanying the discharge toward the SPM of the substrate W. Therefore, damage generation on the surface of the substrate W can be suppressed or prevented.

Further, the conductive discharge step S3 is performed before the SPM discharge step S4. From the end of the conductive discharge step S3, the amount of charge contained in the chemical solution in the chemical solution pipe starts to increase. Therefore, when a long period of time has elapsed from the end of the conductive discharge step S3, the amount of charge contained in the chemical solution in the chemical solution pipe is large, but when the interval between the conductive discharge step S3 and the SPM discharge step S4 is short, The amount of charge contained in the drug solution in the drug solution tube is small. In this case, the processing liquid in a state where the electric charge is sufficiently removed can be ejected from the ejection port 9a in the SPM ejecting step S4. Then, as in the present embodiment, the chemical liquid from the discharge port 9a is ejected in less than about 20 seconds after the end of the conductive discharge step S3 (the period in which the charge amount of the H ₂ SO ₄ in the circulation pipe 28 is not saturated). In the case of the start, the chemical liquid in a state in which almost no electric charge is contained can be ejected from the discharge port 9a.

Although an embodiment of the present invention has been described above, the present invention can be embodied in other forms.

For example, as in the first modification shown in FIG. 7, one portion of the body 51 may be electrically conductive and the other portions may have insulation. In the example of FIG. 7, in the bottom wall 63 (the second horizontal wall 70), a conductive portion 101 having conductivity is provided at a portion including the liquid-contacting position PL, and the liquid-holding position PL is placed on standby. The position at which the chemical solution discharged from the discharge port 9a of the chemical liquid nozzle 9 at the position P2 is liquid. The conductive portion 101 is formed using a conductive material such as conductive PEEK. The conductive portion 101 is grounded via the ground structure 73. The portion other than the conductive portion 101 in the body 51 is the insulating portion 102. The insulating portion 102 is formed using an insulating material such as PTFE resin (polytetrafluoroethylene) or PFA (perfluorovinyl ether).

In the conductive discharge step S3 (see FIG. 5), the chemical liquid is discharged from the discharge port 9a while the chemical liquid nozzle 9 is placed at the standby position P2 (lower standby position P22). The chemical liquid discharged from the discharge port 9a is in the conductive portion 101, and flows from the second horizontal wall 70 of the bottom wall 63 along the second inclined wall 71 toward the discharge port 54. In the discharge state of the chemical liquid, as shown in FIG. 7, the discharge port 9a and the conductive portion 101 are connected via a continuous flow of the chemical liquid discharged from the discharge port 9a.

In the first modification, in the pot body 51, the conductive portion 101 is formed in a region including the liquid level position PL, and the region other than the conductive portion 101 is the insulating portion 102. Even if the entire body 51 is not made into a conductive portion, the discharge port 9a and the conductive portion 101 can be connected to each other via a chemical solution. Since the entire body 51 is not made to be a conductive portion, cost reduction can be achieved.

Further, as in the second modification shown in FIG. 8, the conductive strip 201 may be provided to extend in the internal space 52. In the example of FIG. 8, the conductive strip 201 is rod-shaped and extends in the horizontal direction (for example, the first horizontal direction D1). The conductive strip 201 is formed using a carbon material. The conductive strip 201 is grounded via the ground structure 73.

In the conductive discharge step S3 (see FIG. 5), the chemical liquid is discharged from the discharge port 9a while the chemical liquid nozzle 9 is placed at the standby position P2 (the lower standby position P22). The chemical liquid discharged from the ejection outlet 9a is supplied to the conductive strip 201. As shown in Fig. 8, in the discharge state of the chemical liquid, the discharge port 9a and the bus bar 201 are connected via a continuous flow of the chemical liquid discharged from the discharge port 9a. Thereby, the configuration in which the discharge port 9a and the conductive portion are connected to each other via the chemical liquid can be realized. As shown in FIG. 8, in this case, the pot body 51 can also be formed using an insulating material. Thereby, it is possible to reduce costs. Alternatively, a conductive material may be used to form the pot body 51.

Further, in the third modification shown in FIG. 9, the internal space 52 may be provided with a storage portion 302 capable of accumulating the chemical liquid discharged from the discharge port 9a. In addition, a conductive strip 301 extending in the inner space 52 may also be disposed. In this case, the chemical liquid accumulated in the storage portion 302 can also be brought into liquid contact with the conductive strip 301.

In the example of FIG. 9, the conductive strip 301 is rod-shaped and extends in the horizontal direction (for example, the first horizontal direction D1). The conductive strip 301 is formed using a carbon material. The conductive strip 301 is grounded via the ground structure 73.

In the conductive discharge step S3 (see Fig. 5), the chemical liquid is discharged from the discharge port 9a while the chemical liquid nozzle 9 is placed at the standby position P2 (lower standby position P22). The chemical liquid discharged from the discharge port 9a is stored by the storage unit 302. As shown in FIG. 9, in the discharge state of the chemical liquid, the discharge port 9a and the bus bar 301 are connected via the continuous flow of the chemical liquid discharged from the discharge port 9a and the chemical liquid stored by the storage unit 302 ( Liquid connection). Thereby, the configuration in which the discharge port 9a and the conductive portion are connected to each other in a liquid state can be realized relatively easily. Then, the discharge port 9a and the conductive portion can be connected to each other more reliably as a liquid.

Further, as shown in FIG. 9, in the third modification, the pot body 51 can be formed using an insulating material. Thereby, cost reduction can be achieved. Alternatively, a conductive material may be used to form the pot body 51.

Further, the fourth modification shown in FIG. 10 is different from the above-described embodiment (see, for example, FIG. 3) in that the chemical liquid nozzle 9 is not constituted by the nozzle facing downward, but is inclined from the discharge port 9b. The nozzle is sprayed downward with a downwardly directed nozzle. In a state where the chemical liquid nozzle 9 is placed at the standby position P2 (lower standby position P22), the chemical liquid is discharged from the discharge port 9b.

In the conductive discharge step S3 (see FIG. 5), the chemical liquid is ejected from the discharge port 9b of the chemical liquid nozzle 9 toward the internal space 52 of the standby pot 13 in a continuous flow. The chemical liquid ejected from the ejection port 9b is attached to the side wall 66 of the second side wall 65. Thereafter, the chemical liquid that has fallen onto the second horizontal wall 70 of the bottom wall 63 flows along the second inclined wall 71 toward the discharge port 54. As shown in Fig. 10, in the discharge state of the chemical liquid, the discharge port 9b and the pot body 51 having conductivity are connected via a continuous flow of the chemical liquid discharged from the discharge port 9b. Thereby, even when the chemical liquid nozzle 9 includes a nozzle that is inclined downward, the discharge port 9b and the conductive portion can be connected to each other via the chemical liquid.

Further, in the fifth modification shown in FIG. 11, the fourth modification is combined with the configuration of the first modification. The sixth modification shown in FIG. 12 is a configuration in which the fourth modification is combined with the second modification. The seventh modification shown in FIG. 13 is a configuration in which the fourth modification is combined with the third modification. In FIGS. 11 to 13, the same reference numerals as in the case of FIGS. 7 to 10 are attached and the description is omitted.

Further, in the above-described substrate processing example, the case where the conductive discharge step S3 is performed after the substrate W starts to rotate has been described, but the substrate W may be started to rotate during the conductive discharge step S3 or may be on the substrate W. The conductive discharge step S3 is performed before the start of the rotation, and the conductive discharge step S3 can be performed before the holding of the substrate W by the rotating chuck (that is, before the loading of the substrate W in the chamber 7). However, in such a case, the timing of the discharge of the SPM from the discharge port 9a is preferably a predetermined timing within less than 20 seconds after the end of the conductive discharge step S3.

In addition, in the above-described embodiment, a mode in which the mixture of H ₂ SO ₄ and H ₂ O ₂ is mixed in the mixing unit 24 connected to the upstream side of the chemical liquid nozzle 9 via the SPM pipe 20 is exemplified. Note that a nozzle mixing type in which H ₂ SO ₄ and H ₂ O _{2 are} mixed in the inside of the chemical liquid nozzle 9 may be employed.

Further, although the case where the standby pot 13 is provided in the conductive portion has been exemplified, the conductive portion may be provided to another member. For example, a conductive material may be used to form a portion of the processing cup 12 (including a portion of the liquid filling position PL of the chemical liquid from the ejection ports 9a, 9b) or all of the conductive portions, and the conductive portion is grounded. In the grounding structure (grounding structure 73). A conductive material is used to form a portion of the body of the processing cup 12 (including a portion of the liquid-picking position PL of the chemical liquid from the ejection ports 9a, 9b) or all of the conductive portion, and the conductive portion is grounded to the grounding structure (grounding) Construction 73). Next, in the conductive discharge step (S3 of FIG. 5), SPM may be ejected from the ejection ports 9a and 9b toward the conductive portion in a continuous flow, whereby the ejection ports 9a and 9b and the conductive portion may be continuously connected. The fluid SPM is connected by liquid.

Further, a conductive material may be used to form a portion of the body of the spin-base 17 (including a portion of the liquid-collecting position PL of the chemical liquid from the ejection ports 9a, 9b) or all of the conductive portions, and the conductive portion may be grounded to Grounding structure (grounding structure 73). A conductive portion is formed by using a conductive material to form one or all of the rotating base 17 (including a portion of the liquid filling position PL of the chemical liquid from the ejection ports 9a, 9b), and the conductive portion is grounded to the grounding structure (the grounding structure 73). ). Next, in the conductive discharge step (S3 of FIG. 5), SPM may be ejected from the ejection ports 9a and 9b toward the conductive portion in a continuous flow, whereby the ejection ports 9a and 9b and the conductive portion may be continuously connected. The fluid SPM is connected by liquid.

Further, in the conductive discharge step (S3 of FIG. 5), the SPM may be ejected from the ejection ports 9a and 9b toward the conductive holding member 18 in a continuous flow state, whereby the ejection ports 9a, 9b and the holding are performed. Member 18 is connected in liquid via a continuous flow of SPM.

Further, although the case of using SPM as a chemical liquid has been exemplified, the chemical liquid may be a conductive chemical liquid having conductivity. The conductive chemical solution may be a chemical solution containing at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, and hydrogen peroxide water.

Further, the conductive treatment liquid sprayed from the treatment liquid nozzle (chemical liquid nozzle 9) is not limited to the conductive chemical liquid, and may be functional water. The functional water may be, for example, any one of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm).

Although the embodiments of the present invention have been described in detail, these are merely specific examples used to clarify the technical contents of the present invention, and the present invention should not be construed as limited to the specific examples. The scope should be limited only by the scope of the accompanying patent application.

The present application is filed in the Japanese Patent Application No. Hei. No. Hei. No. Hei.

Claims (20)

 A method for removing a treatment liquid for removing a treatment liquid in a treatment liquid pipe in a substrate processing system for processing a substrate using a treatment liquid, the substrate treatment system comprising: a chamber; the treatment liquid nozzle being housed in the foregoing a processing chamber, wherein the processing liquid supply unit has a processing liquid pipe internally connected to the ejection port for supplying a processing liquid to the processing liquid nozzle; the conductive portion is disposed in the chamber; and grounding a method of grounding the conductive portion; the processing liquid removing method includes a processing liquid discharging step of discharging a processing liquid from the processing liquid nozzle toward a main surface of the substrate; and a conductive discharging step of the processing When the liquid ejecting step is not performed, the processing liquid is ejected from the ejection port toward the conductive portion in a continuous flow state, and the ejection port and the conductive portion are connected to each other by a treatment liquid, whereby the treatment liquid is piped. The treatment liquid inside is removed.    The method of removing a treatment liquid according to claim 1, wherein the conductive discharge step includes a step of removing a treatment liquid in a circulation pipe that circulates the treatment liquid in the tank.    The method for removing a treatment liquid according to claim 1 or 2, further comprising a substrate holding step of holding the substrate by a substrate holding unit housed in the chamber; the conductive discharge step is included after the substrate holding step And the process performed before the process liquid discharge process.    The method of removing a treatment liquid according to claim 1 or 2, wherein the conductive discharge step includes discharging the treatment liquid from the discharge port in a state where the treatment liquid nozzle is disposed at a second position different from the first position. In the first step, the processing liquid discharged from the ejection port is supplied to the main surface of the substrate, and the substrate is held by the substrate holding unit housed in the chamber.    A substrate processing method is performed in a substrate processing system that processes a substrate housed in a chamber using a processing liquid, and the substrate processing system includes: the chamber; the processing liquid nozzle is received a processing liquid supply unit having a processing liquid pipe internally connected to the ejection port for supplying a processing liquid to the processing liquid nozzle; and a conductive portion disposed in the chamber; and The grounding structure is configured to ground the conductive portion, and the substrate processing method includes a processing liquid discharging step of discharging a processing liquid in the processing liquid pipe from the ejection port toward a main surface of the substrate, and a conductive discharging step. When the processing liquid ejecting step is not performed, the processing liquid is ejected from the ejection port toward the conductive portion in a continuous flow state, and the ejection port and the conductive portion are in fluid contact by the processing liquid, thereby performing the above-described processing. The treatment liquid in the liquid piping is de-charged.    The substrate processing method according to claim 5, wherein the conductive discharge step includes a step of removing a treatment liquid in a circulation pipe that circulates the treatment liquid in the tank.    The substrate processing method according to claim 5, wherein the conductive discharge step includes a step performed before the processing liquid discharge step.    The substrate processing method according to claim 5, further comprising a substrate holding step of holding the substrate by a substrate holding unit housed in the chamber; the conductive discharge step is included after the substrate holding step The step to be performed before the processing liquid discharge step.    The substrate processing method according to claim 7, wherein the processing liquid discharging step is started within less than 20 seconds after the completion of the conductive discharge step.    The substrate processing method according to claim 5, wherein the processing liquid ejecting step includes a step of ejecting the processing liquid from the ejection port in a state where the processing liquid nozzle is disposed at the first position, and the first position The processing liquid discharged from the ejection port is supplied to the main surface of the substrate, and the substrate is held by a substrate holding unit housed in the chamber; the conductive discharge step is included in The step of discharging the processing liquid from the discharge port in a state where the processing liquid nozzle is disposed at a second position different from the first position.    A substrate processing system for processing a substrate using a processing liquid, comprising: a chamber; a substrate holding unit housed in the chamber for holding the substrate; and a processing liquid nozzle housed in the chamber and having a spray a processing liquid supply unit having a processing liquid pipe internally connected to the discharge port for supplying a processing liquid to the processing liquid nozzle; a conductive portion disposed in the chamber; and a grounding structure for electrically connecting the conductive portion And a control device that controls the processing liquid supply unit; the control device performs a process of discharging a processing liquid from the processing liquid nozzle toward a main surface of the substrate; and a conductive discharging step When the processing liquid ejecting step is not performed, the processing liquid is ejected from the ejection port toward the conductive portion in a continuous flow state, and the ejection port and the conductive portion are in fluid communication by the processing liquid.    The substrate processing system according to claim 11, wherein the processing liquid piping includes a circulation pipe that circulates the treatment liquid in the tank, and the control device removes the treatment liquid in the circulation piping in the conductive discharge step.    The substrate processing system according to claim 11 or 12, wherein the control device performs the conductive discharge step before the processing liquid discharge step.    The substrate processing system according to claim 11 or 12, wherein the control device further performs a substrate holding step of holding the substrate by the substrate holding unit; the control device is after the substrate holding step and the processing liquid The conductive discharge step described above is performed before the discharge step.    The substrate processing system according to claim 11 or 12, wherein the processing liquid nozzle is movable between a first position and a second position, wherein the first position is such that the processing liquid discharged from the ejection port is supplied to the foregoing a position of the main surface of the substrate, wherein the substrate is held by the substrate holding unit housed in the chamber, and the second position is different from the first position and is a processing liquid sprayed from the discharge port The control device is configured to execute the processing liquid ejecting step in a state where the processing liquid nozzle is disposed at the first position, and the processing liquid nozzle is disposed in the second position. The aforementioned conductive discharge process is performed in the state.    The substrate processing system according to claim 11 or 12, further comprising: a pot disposed on a side of the substrate holding unit for receiving a processing liquid discharged from the ejection port; wherein the conductive portion is disposed on The aforementioned pot.    The substrate processing system according to claim 16, wherein the pot includes a container-shaped pot body; and the conductive portion is formed on the entire pot body.    The substrate processing system according to claim 16, wherein the jug includes a container-shaped pot body; and in the pot body, the conductive portion is partially disposed to include a treatment liquid ejected from the ejection port. In the region of the liquid position, a portion other than the above-described conductive portion in the pot body is formed using an insulating material.    The substrate processing system according to claim 16 or 17, wherein the pot includes a container-shaped pot body; and the conductive portion includes a conductive strip extending in an inner space of the pot body.    The substrate processing system according to claim 16 or 17, wherein the jug includes: a container-shaped pot body; and a storage portion capable of accumulating a processing liquid sprayed from the ejection port toward an inner space of the pot body; The conductive portion includes a conductive strip extending in the inner space of the pot body, and the storage portion is provided such that the processing liquid liquid accumulated in the storage portion contacts the conductive strip.