TW201918575A - Substrate processing apparatus and film-forming apparatus capable of uniformly processing the entire surface to be processed with respect to a substrate surface processing by using the reverse sputtering principle - Google Patents

Abstract

[Problem] A technique is provided in which the entire surface to be treated can be uniformly processed in the surface treatment of the substrate by the reverse sputtering principle. [Solution] A substrate processing apparatus (14) includes a chamber (41) to which a substrate (2) is placed and into which a discharge gas is introduced, and a substrate holder (42) that holds the substrate in the chamber (41) (2) a substrate holder support portion (43) that supports the substrate holder (42) in the chamber (41); and a voltage application means (44) that causes the substrate holder (42) to be a cathode, at least The chamber (41) and the substrate holder supporting portion (43) are anodes, and a voltage is applied to the substrate (2); wherein a discharge due to a voltage application by the voltage applying means (44) is applied to the chamber (41) The ions or electrons generated inside are irradiated onto the surface of the substrate (2) to perform surface treatment of the substrate (2), and the substrate holder (42) and the substrate holder supporting portion (43) are via the substrate holder (42). The substrate holder support portion (43) is electrically connected to the floating portion (50).

Description

Substrate processing device and film forming device

The present invention relates to a substrate processing apparatus and a film forming apparatus.

In the film formation process of the semiconductor device, before the sputtering, the substrate surface treatment using the reverse sputtering principle is performed as a pretreatment and an etching treatment for cleaning the surface of the substrate (Patent Document 1). The surface treatment by the reverse sputtering is performed by introducing a discharge gas such as Ar gas into the chamber in which the substrate is placed, and maintaining the chamber at a predetermined vacuum pressure, and applying a predetermined high-frequency voltage to the substrate. The discharge generated on the surface to be processed of the substrate due to the application of the voltage causes plasma to be generated, and ions in the plasma collide with the surface to be processed of the substrate, thereby removing the oxide film or the like formed on the surface to be processed. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2012-132053

[The problem that the invention wants to solve]

In the application of the voltage to the substrate in the reverse sputtering process, the substrate mounting portion of the substrate holder is a cathode, and the device other than the substrate holder such as a chamber is configured as an anode. In order to uniformly process the entire surface of the substrate to be processed, it is necessary to form the plasma region to be wider than the surface to be processed. However, depending on the configuration of the device, in the region where the substrate mounting portion of the substrate holder serving as the cathode is close to the anode, the charging of electrons may be hindered, and the diffusion of the plasma may be hindered. As a result, there is a case where the distribution of the treated surface of the substrate affects the distribution.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a technique for uniformly processing a full range of treated surfaces in terms of substrate surface treatment using the principle of reverse sputtering. [Technical means to solve the problem]

In order to achieve the above object, a substrate processing apparatus according to the present invention is a substrate processing apparatus including: a chamber in which a substrate is disposed and into which a discharge gas is introduced; and a substrate holder that holds the substrate in the chamber; the substrate holder a support portion that supports the substrate holder in the chamber; and a voltage applying means that causes the substrate holder to be a cathode, and at least the chamber and the substrate holder support portion are anodes, and a voltage is applied to the substrate Wherein the surface of the substrate is subjected to surface treatment by ions or electrons generated in the chamber due to discharge generated by voltage application of the voltage applying means, and the substrate holder and the substrate are The holder support portion is coupled via a floating portion that is electrically insulated from the substrate holder and the substrate holder support portion. In order to achieve the above object, a film forming apparatus of the present invention includes: the substrate processing apparatus; and a film forming processing unit that performs a film forming process on a surface of the surface-treated substrate through the substrate processing apparatus. [Compared to the efficacy of prior art]

According to the present invention, it is possible to perform uniform processing of the entire surface to be treated in terms of surface treatment of the substrate by the principle of reverse sputtering.

Hereinafter, suitable embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred embodiments of the present invention, and the scope of the present invention is not limited to such configurations. In addition, the hardware structure, the soft structure, the process flow, the manufacturing conditions, the size, the material, the shape, and the like of the device in the following description are not intended to limit the scope of the present invention.

(Embodiment 1) <Overall Configuration of Film Forming Apparatus> Fig. 4 is a schematic view showing the overall configuration of a film forming apparatus 1 according to an embodiment of the present invention. The film forming apparatus 1 includes a storage chamber 11 that houses the substrate 2 subjected to the film formation process, a heating chamber 12 that performs heat treatment of the substrate 2, and a film formation chamber 13 that performs a film formation process on the surface to be processed of the substrate 2. The film forming chamber 13 is provided with a substrate processing apparatus 14 for performing pretreatment such as cleaning of the surface to be processed of the substrate 2 before the film formation process, and etching processing, and forming a film on the processed surface of the substrate 2 The sputtering apparatus 15 of the film formation processing part. The film forming apparatus 1 of the present embodiment has a configuration in which the substrate 2 is vertically placed (the processed surface is in a vertical posture) and transported between the respective chambers (see FIG. 1).

Figure 5 is a flow chart of the film forming process. The substrate 2 is sequentially transported from the storage chamber 11 to the heating chamber 12 (S101), the substrate processing apparatus 14 from the heating chamber 12 to the film forming chamber 13 (S103), and the substrate processing apparatus 14 to the sputtering apparatus 15 (S105). Film formation treatment was carried out. After the substrate 2 is heat-treated by the heater 121 in the heating chamber 12 (S102), the surface treatment by the substrate processing apparatus 14 of the film forming chamber 13 is first performed (S104). The substrate 2 subjected to the surface treatment is then subjected to a sputtering process using the targets 151, 152, and 153 formed of various materials based on the sputtering apparatus 15 (S106), and the film formation process is terminated.

The film forming apparatus 1 according to the present embodiment is applicable to, for example, various electrode formations accompanying pretreatment. Specific examples thereof include a plating seed film for a FC-BGA (Flip-Chip Ball Grid Array) mounting substrate and a metal laminated film for a SAW (Surface Acoustic Wave) device. Further, examples thereof include a conductive hard film in the joint portion of the LED, and a film formation of the terminal portion film of the MLCC (Multi-Layered Ceramic Capacitor). Further, it is also applicable to the formation of an electromagnetic shielding film for an electronic component package and a terminal portion film of the chip resistor. The size of the processing substrate 2 can be, for example, in the range of 50 mm × 50 mm to 600 mm × 600 mm. Examples of the material of the substrate 2 include glass, alumina, ceramics, and LTCC (Low Temperature Co-fired Ceramics).

<Substrate Processing Apparatus> FIG. 1 is a schematic view schematically showing the overall configuration of the substrate processing apparatus 14 according to the present embodiment. 1(a) is a schematic view showing a configuration in which the substrate processing apparatus 14 is viewed from the direction in which the substrate 2 is transported, and FIG. 1(b) is viewed from the direction facing the processed surface 21 of the substrate 2 to maintain the substrate. Schematic diagram of the configuration of the device and the substrate holder support portion. The substrate processing apparatus 14 includes a chamber 41 constituting the film forming chamber 13, a substrate holder 42, a substrate holder supporting portion 43, a matching box 44 as a voltage applying means, a high frequency power source 45, a pressure adjusting means 46, and a gas supply means. 47.

As described above, the substrate 2 is transported between the respective chambers of the film forming apparatus 1 in a vertical state, and is also disposed in the chamber 41 in a posture in which the processed surface 21 is vertical (the processed surface 21 is oriented in the horizontal direction). . As shown in FIG. 1, the substrate 2 presses the peripheral edge portion of the processed surface 21 through the pressing frame 421, so that the surface on the opposite side of the processed surface 21 is pressed against the substrate holder 42 to press the frame 421 and the substrate holder. 42 is held between the clamped state. The pressing frame 421 is fixed to the substrate holder 42 by a fastener 423 such as a screw so as to maintain a state in which the substrate 2 is sandwiched between the substrate holders 42. The substrate holder 42 holding the substrate 2 is supported by the substrate holder support portion 43 as described above. The substrate holder support portion 43 is configured to include a wheel 431 as a transport means on the lower side, and is movable in the chamber 41 in a state in which the substrate holder 42 is supported by the guide rail 432 which is laid on the bottom surface of the chamber 41.

The substrate holder 42 and the substrate holder support portion 43 are connected as a continuous structural member via a floating portion 50 that is electrically insulated from both of them. The floating portion 50 is a metal plate-shaped member such as SUS (stainless steel), which is parallel to the substrate 2 at a position directly below the substrate 2, and is longer than the lower end side of the substrate 2 so as to be along the substrate 2 The direction of the extension (the direction in which the substrate 2 is transported) is set. In terms of the material of the floating portion 50, a metal such as aluminum which is generally used in a chamber of a film forming apparatus can be used in addition to SUS.

The floating portion 50 is connected to the substrate holder 42 via the first insulating member 501 and via the second insulating member 502 via the first insulating member 501 via the first insulating member 502. The insulating members 501 and 502 are made of PEEK (Poly Ether Ether Ketone), but an insulating resin such as ceramic or polytetrafluoroethylene (registered trademark) can be used.

The side wall surface and the upper surface of the inner wall of the chamber 41 and the outer surface of the substrate holder supporting portion 43 are covered with a shield 481 (a metal plate of SUS, aluminum, or the like). Further, a shield plate 482 is also provided on the side opposite to the substrate mounting surface side of the substrate holder 42. The shield plates 481 and 482 prevent the material which is scattered at the time of film formation on the inner wall of the chamber 41, the substrate holder support portion 43, and the outer surface of the substrate holder 42. The protective plates 481 and 482 are disposed to be detachable, so that maintenance such as washing, exchange, and the like can be easily performed. The shield plate 481 is connected to the chamber 41 or the substrate holder support portion 43, and these become the GND potential (anode). Further, the shield plate 482 is applied with a potential similar to the substrate holder 42 to form a part of the cathode.

<Processing of the surface of the substrate by the reverse sputtering principle> In a state where the substrate 2 is placed in the chamber 41, the gas supply means 47 supplies the discharge gas to the inside of the chamber 41, and transmits the pressure adjusting means including the vacuum pump 461 or the like. 46, maintaining the pressure in the chamber 41 at a predetermined pressure (for example, 0.3 to 1.2 Pa). Examples of the discharge gas include O ₂ , N ₂ , Ar, CF ₃ , NF ₃ , a mixed gas thereof, and the like. The substrate holder 42 is connected to the matching box 44 and the high-frequency power source 45 via the power supply unit 46, and is applied with a predetermined high-frequency voltage that is impedance-matched by the matching box 44 (for example, 50 to 400 W/210 mm×320 mm (carrier area). = 0.07 to 0.60 W/cm ² (driving power)).

The plasma P is formed in the vicinity of the surface to be processed 21 of the substrate 2 and the substrate holder 42 by the above voltage application. Further, ions or electrons in the plasma P are irradiated and collide with the surface 21 to be processed of the substrate 2, and the surface is etched. By this, for example, in the pretreatment of the subsequent film formation treatment (sputtering), contamination of the natural oxide film, organic matter, or the like formed on the surface 21 to be processed can be removed, and a cleaning effect and a substrate surface active effect can be obtained.

<Excellent points of the present embodiment> With reference to Figs. 1 to 3, the points which are excellent in the present embodiment will be described. Fig. 2 is a schematic view for explaining the characteristics of the substrate processing apparatus 14 according to the present embodiment in comparison with a comparative example. Fig. 2 (a) is a schematic view showing the configuration of the connecting portion of the substrate holder 42 and the substrate holder supporting portion 43 of the substrate processing apparatus 14 according to the present embodiment (the periphery of the floating portion 50 of Fig. 1 (a) Magnified view). Fig. 2(b) is a circuit diagram schematically showing the circuit configuration of the substrate processing apparatus 14 according to the present embodiment. Fig. 2 (c) is a schematic view showing the configuration of a connecting portion of the substrate holder 42 and the substrate holder supporting portion 43 in the comparative example. Fig. 2 (d) is a circuit diagram schematically showing the circuit configuration of the substrate processing apparatus 14 of the comparative example. Fig. 3 is a schematic view showing a plasma region formed in the comparative example (for comparison with Fig. 1(b) of the present embodiment).

As shown in FIG. 1, the substrate holder supporting portion 43 is connected to the GND potential via the chamber 41, and the substrate holder 42 serves as a cathode, the substrate holder supporting portion 43, and the chamber in terms of voltage application to the substrate 2 by the voltage applying means. 41 becomes the anode. Here, as shown in FIGS. 2(a) and 2(b), in the present embodiment, an electrically insulating floating portion is provided between the substrate holder 42 serving as a cathode and the substrate holder supporting portion 43 serving as an anode. 50.

Here, in order to obtain a uniform etching effect over the entire area of the surface to be processed 21 of the substrate 2, it is necessary to form the plasma P in a range wider than the surface 21 to be processed. In other words, as shown in FIG. 1(b), a region A1 which is diffused over a wider area than the upper end side of the surface to be processed 21 of the substrate 2, and a region which is larger than the left and right side edges of the left and right sides of the surface to be processed is formed. A2, A3, and the plasma P of each of the regions A4 below the lower end side of the surface 21 to be processed, so that a sufficient etching effect can be obtained even at the periphery of the processed surface 21.

In the comparative example, as shown in FIGS. 2(c) and 2(d), the connecting portion 49 that connects the substrate holder 42 and the substrate holder supporting portion 43 is connected to the substrate holder 42 via the insulating member 491, and On the other hand, the substrate holder support portion 43 is connected via the metal member 492 without being insulated. Therefore, the connection portion 49 has the same potential as the substrate holder support portion 43. Therefore, in the comparative example, as shown in FIG. 2(c) and FIG. 3, the anode region is configured to extend between the substrate holder 42 as the cathode and the region A4 where the plasma P should be formed. For this reason, the electrons fall to the GND potential in the region A4, and the plasma P does not diffuse from the lower end edge 22 of the substrate 2 to the lower region A4, and the density of the plasma is in the region around the lower end side of the processed surface 21 of the substrate 2 (and The area where the area A4 is close) becomes low. As a result, the area where the etching is distributed around the lower end side of the surface to be processed 21 may be deteriorated.

On the other hand, in the present embodiment, the floating portion 50 which is a connection portion between the substrate holder 42 as the cathode and the substrate holder support portion 43 as the anode is electrically insulated from the cathode and the anode. It does not hinder the charging of electrons in the area A4. As a result, as shown in Fig. 1 (b) and Fig. 2 (a), the plasma P is diffused to the region A4, and is obtained in a region around the lower end side of the processed surface 21 of the substrate 2 (a region close to the region A4). Full etching effect.

<Others> The installation of the floating portion electrically insulated from the cathode and the anode shown in the present embodiment is merely an example, and a suitable arrangement of the floating portion is different depending on the device configuration. In other words, in the present embodiment, in order to configure the apparatus to transport the substrate in the vertical direction, it is necessary to provide a floating portion around the lower end portion of the substrate in the vicinity of the substrate holder supporting constituent portion as the anode. For example, in a device configuration in which the substrate is placed flat and subjected to a reverse sputtering process, the floating portion may be provided so as to surround the periphery of the substrate. Alternatively, it may be configured to be provided only in a necessary region along the outer peripheral region of the substrate, that is, only a portion of the constituent portion connected to the anode close to the peripheral edge of the substrate is changed to the floating portion.

Further, in the present embodiment, the upper and lower left and right directions are defined on the premise that the installation surface of the substrate holder supporting portion 43 on the inner wall of the chamber 41 is a horizontal plane, but the direction of the installation surface is changed, up and down, left and right. The definition of direction also depends on it.

1‧‧‧ film forming device

2‧‧‧Substrate

21‧‧‧Processed surface

14‧‧‧Substrate processing unit

41‧‧‧ chamber

42‧‧‧Substrate holder

43‧‧‧Substrate holder support

44‧‧‧match box

45‧‧‧High frequency power supply

46‧‧‧ Pressure adjustment means

47‧‧‧ gas supply means

50‧‧‧Floating Department

481, 482‧‧‧ protective panels

501, 502‧‧ ‧ insulating materials

P‧‧‧Plastic

1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention. [FIG. 2] Comparison of an embodiment of the present invention and a comparative example FIG. 3 is an explanatory view of a plasma region of a comparative example [FIG. 4] Schematic diagram of a film forming apparatus related to an embodiment of the present invention [Fig. 5] Flow chart of film forming processing

Claims (10)

A substrate processing apparatus comprising: a chamber in which a substrate is disposed and into which a discharge gas is introduced; a substrate holder that holds the substrate in the chamber; and a substrate holder support portion that places the substrate holder in the chamber And a voltage applying means for causing the substrate holder to be a cathode, wherein at least the chamber and the substrate holder supporting portion are anodes, and applying a voltage to the substrate; wherein a voltage due to the voltage applying means is transmitted The discharge generated by the application is irradiated onto the surface of the substrate by ions or electrons generated in the chamber, thereby performing surface treatment of the substrate, and the substrate holder and the substrate holder supporting portion are connected to the substrate holder and The substrate holder support portion is electrically connected to the floating portion. The substrate processing apparatus according to claim 1, wherein the floating portion is disposed on at least a portion of a region along an outer circumference of the substrate. The substrate processing apparatus according to claim 1 or 2, wherein the floating portion is disposed between the substrate holder supporting portion and a portion of the periphery of the substrate that is close to the substrate holder supporting portion. The substrate processing apparatus according to claim 1 or 2, wherein the substrate holder holds the substrate so that the surface to be processed is vertical, and the floating portion is disposed below a lower end portion of the substrate. The substrate processing apparatus according to claim 4, wherein the floating portion has a portion that is entirely close to the entire lower portion of the substrate. The substrate processing apparatus according to claim 1 or 2, wherein the floating portion is coupled to the substrate holder and the substrate holder supporting portion via an insulating member. The substrate processing apparatus according to claim 1 or 2, wherein the floating portion is made of a metal plate member, and is disposed in parallel with the processed surface of the substrate. The substrate processing apparatus according to claim 1 or 2, further comprising a shield plate disposed in the chamber, wherein the shield plate is contained in the anode. The substrate processing apparatus according to claim 1 or 2, wherein the substrate holder supporting portion is configured to be movable in the chamber. A film forming apparatus comprising: the substrate processing apparatus according to any one of claims 1 to 9; and a film forming processing unit that performs a film forming process on a surface of the surface-treated substrate through the substrate processing apparatus.