TW201903514A - Photomask and method for manufacturing display device capable of transfer-printing a high-definition pattern faithful to the pattern design of the photomask - Google Patents

Abstract

When the transfer pattern of the photomask is transferred to the transferee by the near-exposure method, it is difficult to transfer a high-definition pattern faithful to the design of the photomask. The invention relates to a photomask, which is provided on a transparent substrate with a photomask for near-exposure for forming a black matrix transfer pattern on a transferee, and the transfer pattern includes: a first slit pattern, It is formed in the first pattern forming region, and includes a slit pattern substantially including a light transmitting portion, and has a portion having a fixed width W1. The second slit pattern is formed in the second pattern forming region except for the intersection region. A slit pattern that substantially includes a translucent portion, and a portion having a fixed width W2 that is smaller than the fixed width W1; and an auxiliary pattern, which is a pattern that is not independently resolved, and is adjusted to be formed on the transferred body The shape of the black matrix.

Description

Photomask and display device manufacturing method

The present invention relates to a photomask for manufacturing electronic devices, particularly a photomask for flat panel displays, and a method for manufacturing a display device.

Patent Document 1 describes a photomask that can use a photolithography method to form a line pattern having fine portions on a transfer object such as a substrate. Specifically, Patent Document 1 describes a photomask which is used to form a line pattern having a fine portion with a line width of 2 μm to 10 μm, and a peripheral region surrounding the line pattern, and has: A translucent portion corresponding to the above-mentioned line drawing; and a translucent portion surrounding the light-shielding portion and the translucent portion and corresponding to the peripheral area; and the width of the translucent portion is larger than that of the line drawing The fine portion is wide. According to this, it is possible to form a fine line diagram while suppressing an increase in equipment investment or a decrease in production efficiency. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2015-99247

[Problems to be Solved by the Invention] With the rapid expansion of the market for mobile terminals and the like, flat-panel display (hereinafter referred to as "FPD") products such as liquid crystal display devices (hereinafter referred to as "LCD") are continuously promoting the increase in pixel density. In addition, further improvements in the resolution, brightness, power saving, and operation speed of the display screen are strongly desired. As a color filter (hereinafter referred to as "CF") substrate for an LCD, it is known to arrange three primary color filters (red filter, green filter) corresponding to each pixel electrode on a transparent substrate. , And blue filters), and a black matrix (hereinafter referred to as "BM") as a light-shielding portion is provided between the filters. The BM shields, for example, a portion of a liquid crystal display element that has a source wiring or a gap between a pixel electrode and a source wiring that does not contribute to the display of an image. In order to make the liquid crystal display brighter, it is desirable to reduce the light-shielding portion of the BM as much as possible, that is, to make the line width of the BM finer. FIG. 19 (a) is a schematic diagram showing a configuration example of a color filter. In the pattern of the color filter shown here, three sub-pixels (SP unit pattern) having the same shape as each other are arranged in one pixel (P unit pattern). The three sub-pixels correspond to color filters of R (Red), G (Green), and B (Blue), respectively. Each sub-pixel is formed in a rectangle and is regularly arranged at a fixed pitch. Each sub-pixel is divided by a BM. The BMs intersect each other and are formed in a lattice shape. One of the sub-pixels having the three colors is regularly arranged at a fixed pitch, thereby forming a repeating pattern. With the miniaturization trend of the above-mentioned BM, a need exists for a miniaturization in a photomask provided with a pattern for transferring the BM. However, if the size of the pattern included in the photomask is simply reduced, the following disadvantages occur. In the manufacture of CF, the following method is applied: The exposure pattern (proximity exposure apparatus) of the proximity exposure method is mainly used to expose the transfer pattern of the photomask to a negative-type photosensitive material. An example of a pattern of an existing (before miniaturization) mask for BM formation is shown in FIG. 19 (b), and an example of the pattern of the above-mentioned mask pattern to form a finer BM is shown in FIG. 19 (c ). The miniaturization of such a pattern becomes necessary when, for example, a CF of about 300 ppi (pixel per inch) is converted to a finer specification exceeding 400 ppi. When a BM pattern is transferred on a CF substrate using a photomask having the pattern of FIG. 19 (c), and when CF is manufactured, it is preferable to obtain a transfer image of BM as shown in FIG. 20 (a). However, in reality, the transfer image of the BM transferred to the CF substrate is as shown in FIG. 20 (b), which causes the following problems: the width of the BM is not sufficiently miniaturized (see the Z1 part in the figure), and the sub-pixels The corner of the opening (refer to the part Z2 in the figure) has radians. Therefore, it is actually difficult to obtain an ideal CF pattern. According to the technique described in the aforementioned Patent Document 1, a certain effect is obtained regarding the miniaturization of the line width of the BM. On the other hand, when forming a BM for making a more favorable CF, the radian of the corners of the openings of the sub-pixels and the like have room for further improvement. The reason is believed to be that: during close-up exposure, due to the diffracted light generated in the gap between the mask and the transferee (ie, the close-up gap), a complex light intensity distribution is formed, which is formed on the transferee. The transferred image cannot faithfully reproduce the pattern of the photomask. According to the research by the inventors, it is clear that according to the design of the mask pattern, the light passing through the mask will be affected by the diffraction effect when it reaches the object to be transferred (here, the CF substrate). Unexpected locations produce a local increase or decrease in light intensity, thereby forming a light intensity distribution that is different in shape from the pattern of the photomask. Therefore, it can be seen that it is difficult to form a BM that is faithful to the pattern design of the photomask, and that the above-mentioned tendency becomes more prominent due to the miniaturization of the pattern. On the other hand, in order to control the diffracted light in the proximity gap that causes the above problem, it is considered to sufficiently narrow the proximity gap or to fundamentally change the optical conditions (exposure light source wavelength, etc.). However, if the production efficiency and cost efficiency of CF manufacturing are considered, it is advantageous to use a large-scale mask (the size of one side is 300 mm or more, preferably about 400 to 2000 mm). In addition, if a mask having such a size is maintained for close exposure, it is desirable to ensure a close gap sufficiently (for example, 30 μm or more, preferably 40 μm or more) for stable production of CF. In addition, the proximity exposure method has the advantage of lower production cost than the projection exposure method. If the device configuration such as optical conditions is changed, there is a concern that this advantage is significantly impaired. An object of the present invention is to provide a light capable of transferring a high-definition pattern faithful to a pattern design of a target device in a case where a pattern for transfer of a photomask is transferred to a transfer object by a proximity exposure method. Manufacturing method of cover and display device. [Technical means to solve the problem] (First aspect) The first aspect of the present invention is a photomask, which is characterized in that it is provided on a transparent substrate with a transfer for forming a black matrix on a transferee. A photomask for close exposure with a pattern, and the transfer pattern is a pattern in which a pattern formation region extending in the first direction is set as a first pattern formation region, and a pattern extending in a second direction that intersects the first direction. When the formation area is a second pattern formation area, and when the area where the first pattern formation area and the second pattern formation area intersect is an intersection area, the first slit pattern is formed in the first pattern formation. The region substantially includes a slit pattern of the light-transmitting portion and has a portion having a fixed width W1. The second slit pattern is formed in the second pattern-forming region other than the above-mentioned intersection region and substantially includes semi-transmission. Part of the slit pattern, and a part having a fixed width W2 smaller than the fixed width W1; and an auxiliary pattern, which is a pattern that is not independently resolved, and adjusts the black moment formed on the transferee The shape of the array. (Second aspect) The second aspect of the present invention is the photomask of the first aspect described above, wherein the auxiliary pattern includes a pair of convex portions, and the pair of convex portions is based on the second slit pattern. The two sides in the width direction are formed to partially protrude, and include a translucent portion. (Third aspect) The third aspect of the present invention is the photomask according to the second aspect described above, wherein the pair of convex portions are restrained from performing close exposure on the transfer pattern, and the second narrow portion is The light intensity in the light intensity distribution of the transfer image formed by the slit pattern on the transferred object is locally reduced, so that the transmitted light intensity of the second slit pattern is made uniform. (Fourth aspect) The fourth aspect of the present invention is a photomask according to any one of the first to third aspects, characterized in that the auxiliary pattern includes an extension portion, and the extension portion is from the first aspect. The exit of the 2 slit pattern is formed by expanding in at least the second direction, and includes a semi-transmissive portion. (Fifth aspect) The fifth aspect of the present invention is the photomask according to the fourth aspect described above, wherein the expansion portion is added to the second slit pattern at the time of close exposure to the transfer pattern. The curvature of the corners in the transfer image formed on the transfer target. (Sixth aspect) The sixth aspect of the present invention is the photomask according to any one of the first to fifth aspects, wherein the auxiliary pattern includes an isolated pattern, and the isolated pattern is located in the above-mentioned first pattern. It is formed in the first pattern forming region between two adjacent intersecting regions adjacent in one direction, and includes a translucent portion or a light-shielding portion. (Seventh aspect) The seventh aspect of the present invention is the photomask according to the sixth aspect, wherein the isolated pattern is restricted to the first slit pattern when the transfer pattern is subjected to close exposure. The local peak of the light intensity in the light intensity distribution of the transfer image formed on the transferred object makes the transmitted light intensity of the first slit pattern uniform. (Eighth aspect) The eighth aspect of the present invention is the photomask according to the sixth or seventh aspect, wherein the shape of the isolated pattern is rectangular. (Ninth aspect) A ninth aspect of the present invention is a method for manufacturing a display device, which is characterized by including the following steps: preparing a photomask as in any one of the first to eighth aspects; and using a proximity The exposure device transfers the transfer pattern onto the transfer target. [Effects of the Invention] According to the present invention, when a pattern for transfer of a photomask is transferred to a transferee body by a proximity exposure method, a high-definition pattern faithful to a pattern design of a target device can be transferred . Thereby, for example, when a BM is formed using a CF substrate as a transfer target, a high-definition BM can be formed on the transfer target. Therefore, it can contribute to the production of high-performance CF.

<Reference Form> FIG. 1 is a plan view showing a configuration example of a mask according to a reference form of the present invention. 2 (a) is a sectional view taken along the line H-H in FIG. 1, (b) is a sectional view taken along the line V1-V1 in FIG. 1, and (c) is a sectional view taken along the line V2-V2 in FIG. The photomask shown in the figure is a photomask for near-exposure provided on a transparent substrate to form a pattern for transfer of BM on a transfer target. The pattern for transfer of a photomask includes a first slit pattern 1 substantially including a light-transmitting portion 22, a second slit pattern 2 substantially including a translucent portion 21, and a light-shielding pattern 3 substantially including a light-shielding portion 23. . The first slit pattern 1 and the second slit pattern 2 are respectively formed in the corresponding pattern formation regions. Specifically, as shown in FIG. 3, a pattern forming area extending in the first direction is referred to as a first pattern forming area E1, and a pattern forming area extending in a second direction crossing the first direction is referred to as a second When the pattern forming area E2 and the area where the first pattern forming area E1 intersects with the second pattern forming area E2 (the area to which hatching is applied in the figure) are set as the crossing area E3, the first slit pattern 1 is formed on the first The pattern formation area E1 and the second slit pattern 2 are formed in a second pattern formation area E2 other than the intersection area E3. Here, as an example, the X direction (horizontal direction) is set to a first direction, and the Y direction (longitudinal direction) is set to a second direction. In this case, the first pattern formation region E1 and the second pattern formation region E2 are formed in a lattice shape so as to cross each other at right angles. The first slit pattern 1 is a slit-shaped pattern formed by setting the X direction as the length direction and the Y direction as the width direction, and arranged in a specific pitch P1 in the Y direction. The second slit pattern 2 is a slit-shaped pattern formed by setting the X direction as the width direction and the Y direction as the length direction, and arranged in the X direction at a specific pitch P2. The light-shielding pattern 3 is a pattern surrounded by the first slit pattern 1 and the second slit pattern 2. In addition, FIG. 1 shows a part of the transfer pattern of the photomask. In fact, the first slit pattern 1 and the second slit pattern 2 are formed at specific repeat intervals of the pitches P1 and P2, respectively. The first slit pattern 1 includes a light-transmitting portion 22 in which the surface of the transparent substrate 30 is exposed. The second slit pattern 2 includes a translucent portion 21 formed by forming a translucent film 31 on a transparent substrate 30. The translucent film 31 is a translucent film that transmits a part of the exposed light. The light-shielding pattern 3 includes a light-shielding portion 23 formed by forming a light-shielding film 32 on a transparent substrate 30. In addition, in FIG. 2, the light-shielding portion 23 is a laminated film in which the semi-transmissive film 31 and the light-shielding film 32 are sequentially laminated. FIG. 4 (a) is a plan view schematically showing a light intensity distribution of a transfer image obtained on a transferee body when the transfer pattern of the mask of the reference form is exposed using a proximity exposure device. FIG. 4 (b) is a plan view showing a BM image formed on the object to be transferred (negative-type photosensitive material) by the light intensity distribution shown in FIG. 4 (a). In FIG. 4 (b), a portion surrounded by the first BM pattern 41 corresponding to the first slit pattern 1 and the second BM pattern 42 corresponding to the second slit pattern 2 is an opening 43 corresponding to the light-shielding pattern 3. . The line width of the first BM pattern 41 is represented by L1, and the line width of the second BM pattern 42 is represented by L2. According to the light intensity distribution shown in FIG. 4 (a), three types of phenomena described below occur in the shape of a transfer image obtained on a transfer using a transfer pattern of a photomask. (1) Near the intersection region E3 of the first pattern formation region E1 and the second pattern formation region E2 and near the end portion in the length direction of the second slit pattern 2 (part A of FIG. 4 (a)), the exposure A darker point (hereinafter referred to as a "light amount reduction point") at which the light intensity of the light locally decreases. Therefore, the decrease in the light intensity occurring at the place is likely to cause the line width L2 of the second BM pattern 42 to be partially smaller than the design value in the BM image formed on the object to be transferred or a disconnection may occur depending on the situation. (2) As shown in FIG. 4 (b), the corner of the opening portion 43 of the BM image is not a right angle but has an arc. Further, the shape of the contour of the light amount also fluctuates and fluctuates in a portion of the mask transfer pattern that is a straight line (part B in FIG. 4 (a)). Therefore, the corners of the openings 43 of the BM image formed on the object to be transferred are rounded, and the opening area is reduced. (3) In the first slit pattern 1, a strong light amount peak appears in the middle of the two intersecting regions E3 adjacent in the X direction (part C of FIG. 4 (a)). Therefore, the light intensity of the light that is exposed through the first slit pattern 1 generates unnecessary strength. Therefore, the BM image formed on the object to be transferred corresponding to the first slit pattern 1 locally generates a strong hardened portion 44, and thus there is a risk of unevenness in the three-dimensional structure of the BM. In the current situation, a defective image may be produced during the manufacture of CF due to a photosensitive image of a BM photosensitive material on a transferred body caused by a transfer image whose pattern shape is deteriorated due to the above-mentioned three phenomena, and it is an issue to eliminate the problem. Obvious. Hereinafter, the embodiment corresponding to the problem caused by the phenomenon (1) described above is referred to as a first embodiment, and the embodiment corresponding to the problem caused by the phenomenon described in (2) above is referred to as a second embodiment. An embodiment corresponding to a problem caused by the phenomenon (3) described above will be described as a third embodiment. <First Embodiment> First, the phenomenon (1) described above will be studied. (A) of FIG. 5 is an enlarged plan view of the periphery of the cross region of the transfer pattern of the photomask shown in FIG. 1, and (b) is a pattern schematically showing exposure of the transfer pattern by a proximity exposure device. A plan view of the light intensity distribution of the transfer image formed on the transferee at this time. In FIG. 5 (a), the first slit pattern 1 has a portion with a fixed width W1, and the second slit pattern 2 has a portion with a fixed width W2 (where W2 <W1). A portion of the fixed width W1 of the first slit pattern 1 is parallel to the X direction, and a portion of the fixed width W2 of the second slit pattern 2 is parallel to the Y direction. The intersection area E3 is an area divided into a polygon (a quadrilateral in FIG. 5 (a)) between the second slit patterns 2 adjacent in the Y direction. The intersection area E3 can be specified as a polygonal area formed by connecting the corners YE in a straight line when the corners of the second slit pattern 2 facing the intersection area E3 in the Y direction are opposed to each other as YE. . Regarding a certain second slit pattern 2, a line segment connecting the corners YE of the second slit pattern 2 paired in the X direction in a straight line corresponds to the exit of the second slit pattern 2. The exit of the second slit pattern 2 refers to the second slit pattern 2 at the boundary between the intersection region E3 and the second slit pattern 2 and contacting the intersection region E3 in the second direction (the Y direction in this embodiment). End of it. The corner portion YE of the second slit pattern 2 may be specified as a curved portion in which the line width or edge shape of the second slit pattern 2 changes abruptly, for example, at the boundary between the intersection region E3 and the second slit pattern 2. As described above, the first slit pattern 1 includes the light-transmitting portion 22, and the second slit pattern 2 includes the semi-light-transmitting portion 21. In FIG. 5 (a), hatching is applied to show the range of the cross region E3, but the cross region E3 becomes a part of the first slit pattern 1. Therefore, the intersection region E3 includes the light-transmitting portion 22 in which the transparent substrate 30 is exposed similarly to the first slit pattern 1. In addition, with regard to the intersection area E3, hatching may be applied in the drawings other than FIG. 5 (a). The light-shielding pattern 3 is a pattern corresponding to the opening of the BM, and includes a light-shielding portion 23. The light-shielding pattern 3 is formed between the second slit patterns 2 adjacent to each other in the X direction and between the first slit patterns 1 adjacent to each other in the Y direction. In FIG. 5 (b), a light amount is formed at a position corresponding to the second slit pattern 2 at a position separated by a distance d1 (μm) in the Y direction from the boundary between the intersection region E3 and the second slit pattern 2. Lower it by 45. In addition, in FIG. 5 (b), the point where the amount of light generated in the part A of FIG. 4 (a) decreases is emphasized. The formation of the light amount reduction point 45 in the step of forming the BM as described above may cause a risk that the line width of the BM becomes thinner or is broken, which is not preferable. That is, it is preferable to make the intensity of the light formed on the transferee by the light exposed through the second slit pattern 2 more uniform, and as a result, an ideal light intensity distribution as shown in FIG. 6 is obtained. Further, in the light intensity distribution shown in FIG. 6, no light amount reduction point 45 is generated. Therefore, the present inventors have studied the introduction of an auxiliary pattern that can increase the light intensity of the transfer image of the BM formed on the object to be transferred by the first slit pattern 1 and the second slit pattern 2. Of uniformity. This auxiliary pattern is a pattern that is not independently resolved when a pattern for transfer of a photomask is transferred to a transfer object using a proximity exposure device. The so-called "independently resolved pattern" here means that under the exposure conditions of an exposure device for display device manufacturing, the transferred image of the pattern will not be recognizable according to the CD and transmittance in the pattern of the photomask. The pattern formed on the body to be transferred. CD is the abbreviation of Critical Dimension, which has the meaning of pattern width. The auxiliary pattern is a pattern introduced for the purpose of bringing the BM image formed on the transferee close to the ideal shape as shown in FIG. 6, and exerts the function of adjusting the shape of the BM image formed on the transferee. Supporting role. (Mask of First Embodiment) FIG. 7 is a plan view showing a configuration example of a pattern for transfer provided in a mask of a first embodiment of the present invention. The photomask shown in the figure can be used as a photomask for forming a BM on a body to be transferred by performing a close exposure. The mask of the first embodiment includes the same pattern as the mask of the reference form shown in FIG. 1 except that the auxiliary pattern is included in the transfer pattern. Specifically, a pattern for transfer is provided. The pattern for transfer includes a first slit pattern 1 formed in the first pattern forming region E1 and a second slit pattern 2 formed in a region other than the cross region E3. The second pattern formation area E2; and the light-shielding pattern 3 are surrounded by the first slit pattern 1 and the second slit pattern 2. The first slit pattern 1 has a portion with a fixed width W1 (μm), and the second slit pattern 2 has a portion with a narrower fixed width W2 (μm). The pitch (repetition period) in the Y direction of the first slit pattern 1 is P1 (μm), and the pitch (repetition period) in the X direction of the second slit pattern 2 is P2 (μm). Preferably, the first slit pattern 1 substantially includes the light-transmitting portion 22, and the second slit pattern 2 substantially includes the semi-light-transmitting portion 21. The translucent portion 22 may be obtained by exposing the transparent substrate 30, and the semi-transmissive portion 21 may be formed by forming a semi-transmissive film 31 on the semi-transmissive film 31. When the transmittance of the exposed light of the transparent substrate is set to 100%, the transmittance of the exposed light of the translucent portion 21 is preferably 30 to 70%, more preferably 40 to 60%. The phase shift amount of the translucent film 31 with respect to the exposed light is preferably within ± 90 degrees, and more preferably within ± 60 degrees. The intersection region E3 substantially includes the light transmitting portion 22. In addition, in the present embodiment, the "substantially" region refers to a region other than the auxiliary pattern when the auxiliary pattern is introduced in order to improve the transferability of the pattern of the BM although it is not independently resolved. region. For example, there are cases in which, in the first slit pattern 1 including a light transmitting portion, an isolated pattern including a semi-light transmitting portion is introduced as an auxiliary pattern as follows. In this case, the meaning that the first slit pattern 1 "substantially" includes a light-transmitting portion refers to a case where the first slit pattern 1 including the light-transmitting portion and the auxiliary pattern including the semi-light-transmitting portion are compared with each other. When the area obtained by adding is 100%, the area occupied by the first slit pattern 1 is 65% or more, and preferably 80% or more. The same applies to the second slit pattern 2. The meaning that the second slit pattern 2 "substantially" includes a translucent portion means that the area occupied by the second slit pattern 2 is 65% or more, preferably 80 % Or more. The case where the crossing region E3 substantially includes a light-transmitting portion refers to a case where, for example, as described in the second embodiment below, an auxiliary pattern having optical characteristics different from the crossing region E3 is introduced into the crossing region E3. In this case, a portion other than the auxiliary pattern becomes a light transmitting portion. The light-shielding patterns 3 are formed on portions corresponding to the lattice windows formed by the first slit pattern 1 and the second slit pattern 2. The light-shielding pattern 3 includes a light-shielding portion 23 having a light-shielding film 32 formed on a transparent substrate 30. The first slit pattern 1 and the second slit pattern 2 constitute a grid-like pattern corresponding to the BM to be formed on the object to be transferred. The light-shielding pattern 3 surrounded by the first slit pattern 1 and the second slit pattern 2 constitutes a pattern corresponding to the opening of the BM. In the case of manufacturing the CF of an LCD, after forming a BM on a transparent CF substrate, a corresponding color (R, G, B) filter is formed in each opening portion of the BM. In addition, although not shown, a light-transmitting portion without a light-shielding portion may be provided near the outer periphery of the transfer pattern of the photomask. The light-transmitting portion corresponds to a frame region of an outer edge of a display portion of the liquid crystal display device, and has a sufficient width wider than the first and second slit patterns. The width dimension W1 (μm) of the fixed width portion of the first slit pattern 1 is preferably 15 ≦ W1 ≦ 40, and the width dimension W2 (μm) of the fixed width portion of the second slit pattern 2 is preferably 4 ≦ W2 ≦ 12. The pitch P1 (μm) of the first slit pattern 1 is preferably 400 ≦ P1 ≦ 100, and the pitch P2 (μm) of the second slit pattern 2 is preferably 10 ≦ P2 ≦ 35. Furthermore, in this embodiment, the case where the first pattern formation region E1 and the second pattern formation region E2 intersect at right angles has been described as an example, but the present invention is not limited thereto. For example, the intersection angle of the first pattern formation area E1 and the second pattern formation area E2 may be set within 90 ± 45 degrees, and more preferably within 90 ± 30 degrees. In either case, the first slit pattern 1 is formed in the first pattern formation region E1, and the second slit pattern 2 is formed in the second slit pattern 2 except the intersection region E3. In addition, the first slit pattern 1 may not have a fixed width in all parts, and it is sufficient if it has a fixed width part of W1. Similarly, the second slit pattern 2 may not have a fixed width in all parts, as long as it has a fixed width part of W2. Therefore, for example, the first slit pattern 1 may have a portion whose width is partially widened. It is preferable that the first slit pattern 1 and the second slit pattern 2 have portions having the above-mentioned fixed widths W1 and W2 at a ratio of 50% or more of the length, respectively. Hereinafter, the auxiliary pattern included in the transfer pattern of the photomask according to the first embodiment of the present invention will be described with reference to FIG. 7. A pair of convex portions 5 are formed in the second slit pattern 2 as an auxiliary pattern. The pair of convex portions 5 are formed by partially protruding from both sides in the width direction of the second slit pattern 2, whereby one portion of the second slit pattern 2 becomes a wide portion 6 having a line width wider than the other portions. Each convex portion 5 is formed with a protrusion amount of α1 (μm) in the X direction and a protrusion width of β1 (μm) in the Y direction. The pair of convex portions 5 are formed at corresponding positions on both sides in the width direction of the second slit pattern 2 and are preferably provided symmetrically in the width direction. The pair of convex portions 5 are preferably formed at positions equidistant from the boundary between the intersection region E3 and the second slit pattern 2 in the Y direction. The wide portion 6 formed by the pair of convex portions 5 is preferably arranged near the intersection area E3. Specifically, it is preferable that the distance D1 from the boundary between the intersection region E3 and the second slit pattern 2 to the center of gravity of the wide portion 6 in the Y direction is 1 of the length (P1-W1) of the second slit pattern 2 / 4 or less. In this case, the preferred range of the distance D1 is β1 ÷ 2 ≦ D1 ≦ 0. 25 × (P1-W1). The distance D1 preferably satisfies β1 ÷ 2 <D1, that is, the boundary between the convex portion 5 and the intersecting area E3 and the second slit pattern 2 is spaced apart. The width of the wide portion 6 is represented by W2 + (2 × α1). In this case, the protrusion amount α1 of the convex portion 5 is preferably 0 <α1 ≦ 0. 3 × W2, more preferably 0. 04 × W2 ≦ α1 ≦ 0. 25 × W2. Also, the convex width β1 of the convex portion 5 is preferably 0 <β1 ≦ 0. 15 × (P1-W1). According to research by the inventors, it was confirmed that the formation of the above-mentioned light amount reduction point 45 (FIG. 5 (b)) can be suppressed by providing the wide portion 6 in the second slit pattern 2. That is, it can be seen that if exposure is performed on the BM formation mask provided with the transfer pattern of FIG. 7, as shown in FIG. 6, the decrease in light intensity is eliminated in the transfer image of the second slit pattern 2. Thereby, the light intensity distribution is made uniform. That is, compared with the case where there is no wide-width part 6, the said light intensity distribution can be made uniform. Furthermore, in this embodiment, the wide portion 6 is formed at a distance D1 from the boundary of the intersection region E3 and the second slit pattern 2. However, the position and the figure of the wide portion 6 are specified by the distance D1. The positions of the light amount reduction points 45 specified by the distance d1 shown in 5 (b) are not necessarily the same. That is, it may not necessarily be D1 = d1, and there may be cases where D1> d1 or D1 <d1. The optimal position of the wide portion 6, that is, the position of the wide portion 6 where the light intensity distribution in the transfer image of the second slit pattern 2 is most stable can be confirmed by optical simulation. The number of the wide portions 6 provided in the second slit pattern 2 is not limited to one. That is, the convex portions 5 introduced into the second slit pattern 2 are not limited to a pair. For example, as a result of providing the wide portion 6 near the intersection of the intersecting area E3 and the second slit pattern 2, as shown in FIG. 8, a new image may be formed in the transfer image of the second slit pattern 2. In the case where the light amount is lowered at the point 45b. The light amount reduction point 45b is generated at a position separated by a distance d2 from the boundary between the intersection region E3 and the second slit pattern 2 in the Y direction. Therefore, in order to eliminate the decrease in the light amount and make the light intensity distribution of the transferred image of the second slit pattern 2 more uniform, as shown in FIG. The wide portion 6b is formed in the second slit pattern 2 by a pair of convex portions 5b. In the transfer pattern shown in FIG. 9, a wide portion (hereinafter also referred to as a “main wide area”) is provided at a distance of D1 (μm) from the boundary between the intersection area E3 and the second slit pattern 2. Section ") 6, and a wide section 6b is provided at a distance of D2 (μm) from the boundary. In this case, the distance D2 in the Y direction is the same as the above-mentioned distance D1, which indicates the distance from the intersection of the intersection region E3 and the second slit pattern 2 to the center of gravity of the wide portion 6b, and the relationship of D2> D1 is satisfied. In addition, the relationship between the protrusion amount α1 (μm) of the convex portion 5 in the wide portion 6 and the protrusion amount α2 (μm) of the convex portion 5b in the wide portion 6b is preferably α1 ≧ α2, and more preferably α1 > Α2. When the second slit pattern 2 is provided only with the wide portion 6 or when both the wide portion 6 and the wide portion 6b are provided, the convex shape of the convex portions 5 and 5b is preferably rectangular. The number of the wide portions 6 provided in the second slit pattern 2 may be three or more. In this case, if the protrusion amount of each wide portion 6 is set to α1, α2, α3, α4, ... in the order of near to far from the boundary between the intersection area E3 and the second slit pattern 2, Then, the relationship between them is preferably α1 ≧ α2 ≧ α3 ≧ α4 ..., and more preferably α1> α2> α3> α4 .... However, this condition applies to a section from the boundary between the intersection region E3 and the second slit pattern 2 to the middle portion in the longitudinal direction of the second slit pattern 2. The number N of the wide portions 6 arranged at one end to the other end in the longitudinal direction of the second slit pattern 2 is preferably 1 ≦ N ≦ 5. In this case, the main wide portion 6 is preferably arranged near the intersection area E3. In addition, regarding the light amount reduction point 45b, the position of the wide portion 6b specified by the distance D2 and the position of the light amount reduction point 45b specified by the distance d2 are not necessarily the same. That is, it is not limited to D2 = d2, and there may be cases where D2> d2 or D2 <d2. The same applies to the case where three or more wide portions 6 are provided in the second slit pattern 2 (the case below D3). In the photomask according to the first embodiment of the present invention, a wide portion 6 is formed by a pair of convex portions 5 in the second slit pattern 2, and the second exposure can be suppressed when the transfer pattern is subjected to close exposure. The light intensity in the light intensity distribution of the transfer image formed by the slit pattern 2 on the object to be transferred is locally reduced (generation of the light amount reduction point 45), so that the transmitted light intensity of the second slit pattern 2 is uniformized. Thereby, the light intensity distribution of the transfer image of the second slit pattern 2 formed on the object to be transferred can be made close to the ideal light intensity distribution shown in FIG. 6. As a result, when CF is manufactured in the manufacturing process of the display device, the size (especially the pattern width) of the BM formed on the CF substrate can be set within a specific range, thereby reducing the risk of disconnection. It can also be considered that the present embodiment reduces the transfer by replacing the light-shielding pattern portion corresponding to the opening of the BM provided in the previous mask with a semi-transmissive portion below the resolution limit (not independent resolution). Like the risk of thinning or disconnection. <Second Embodiment> The mask according to the second embodiment of the present invention solves the problem caused by the phenomenon (2) described above. FIG. 10 is a plan view schematically showing a light intensity distribution of a transfer image formed on a transferee body when the transfer pattern of the photomask of the reference form shown in FIG. 1 is exposed by the proximity exposure device. Here, it is emphasized that the part B (the rounding of the corners and the undulations of the contour lines) shown in FIG. 4 (a) is expressed. That is, even if the corner K of the light-shielding pattern 3 (FIG. 5 (a)) has edges and corners, if it is transferred to the object to be transferred as a transfer image, the portion corresponding to the corner K of the light-shielding pattern 3 (FIG. 10 Part J) also has an arc, and enters the inside of the opening area where the color filter should be arranged. At the same time, ripples and undulations are generated on the contour lines (S part in the figure) on the outer edge of the bright band (part Q in FIG. 10) formed as the transfer image of the first slit pattern 1 including the light transmitting part (part S in the figure). (Refer to the dotted oval in the figure). Due to these phenomena, the opening area of the CF opening (the area where the color filter is arranged) made using a photomask becomes small, which may damage the brightness of the display. (Mask of Second Embodiment) FIG. 11 is a plan view showing a configuration example of a transfer pattern provided in a mask of a second embodiment of the present invention. The mask of the second embodiment of the present invention includes the first slit pattern 1, the second slit pattern 2 and the light-shielding pattern 3 similarly to the mask of the first embodiment, and is different from the first embodiment. The reason is that, as the auxiliary pattern, instead of having the wide portion (or having the wide portion), the auxiliary pattern has the following extended portion. In the photomask shown in FIG. 11, an expanded portion 7 is formed by expanding in the Y direction from the exit of the second slit pattern 2. Further, the expanded portion 7 also expands in the X direction from the exit of the second slit pattern 2. Here, the X direction is a direction parallel to a portion of the fixed width W1 of the first slit pattern 1, and the Y direction is a direction parallel to a portion of the fixed width W2 of the second slit pattern 2. The exit of the second slit pattern 2 refers to the boundary between the intersection region E3 and the second slit pattern 2 as described above, and is in contact with the intersection region E3 in the second direction (the Y direction in this embodiment). The edge of the second slit pattern 2. The extension portion 7 includes a semi-transmissive portion. The expansion portion 7 expands so as to protrude toward the intersection area E3 from the boundary between the intersection area E3 and the second slit pattern 2, and further expands so as to extend to both sides of the intersection area E3. Here, if the expansion amount in the Y direction of the expansion portion 7 is γ1 (μm) and the expansion amount in the X direction is γ2 (μm), the expansion amount γ1 in the Y direction is the intersection area E3 and the second narrow area. The boundary of the stitch pattern 2 is defined as a reference, and the expansion amount γ2 in the X direction is defined based on the position of the corner YE of the second slit pattern 2 as a reference. The extended portion 7 projects symmetrically with respect to the center in the width direction of the second slit pattern 2 on one side and the other side in the X direction with an expansion amount of γ2 (μm), respectively. Therefore, the width W3 (μm) of the extended portion 7 in the X direction is larger than the width W2 of the second slit pattern 2. The width W3 of the extended portion 7 is W3 (= W2 + 2 × γ2)> W2 in a relationship with the width W2 of the second slit pattern 2. The extended portion 7 is formed in a rectangle including a short side having a size of γ1 and a long side having a size of W3. The size of γ1 (μm) of the extension 7 is preferably 0 <γ1 <0. 5 × W1, more preferably 0 <γ1 <0. 1 × P1 <0. 5 × W1. In addition, the size of γ2 (μm) of the extension 7 is preferably 0 <γ2 <0. 5 × (P2－W2), more preferably 0 <γ2 <0. 3 × (P2－W2). In the transfer pattern of the photomask of the second embodiment, it is preferable that the second slit pattern 2 includes a semi-transmissive portion, and the extension portion 7 also includes a semi-transmissive portion similarly to the second slit pattern 2. Furthermore, it is more preferable that the extended portion 7 is a semi-transmissive portion having the same light transmittance and formed of the same semi-transmissive film as the second slit pattern 2. In the photomask according to the second embodiment of the present invention, an expansion portion 7 extending in the X-direction and the Y-direction from the exit of the second slit pattern 2 is formed. Increasing the curvature of the corner portion (part J in FIG. 10) in the transfer image formed by the second slit pattern 2 on the object to be transferred can suppress the rounding of the corner portion. In other words, as compared with the case where there is no expansion portion, the expansion portion can increase the curvature of the corner portion in the transfer image formed on the object to be transferred. For example, the curvature R2 of the corner portion J in the transfer image of FIG. 10 can be made closer to the curvature R1 (> R2) shown in FIG. 6. Furthermore, it is possible to suppress the undulations of the contour lines (part S in FIG. 10) in the transfer image of the first slit pattern 1 including the light-transmitting portion. Thereby, the light intensity distribution of the transfer image formed on the object to be transferred can be made close to the ideal light intensity distribution shown in FIG. 6. As a result, when the CF is manufactured in the manufacturing process of the display device, a decrease in the opening area of the BM can be suppressed, and a brighter CF can be obtained. In addition to the aspect of the extension part, various aspects can be considered, for example, as shown in FIGS. 12 (a) to (e). In FIG. 11 described above, the expansion section 7 is expanded in both the X direction and the Y direction (XY expansion type). On the other hand, in FIG. 12 (a), the expanded portion 7 is expanded only in the Y direction with the same width as the width W2 of the second slit pattern 2 (Y expanded type). In addition, in FIG. 12 (b), the front end of the expansion portion 7 expanded in the Y direction is convexly protruding (Y convex expansion type), and in FIG. 12 (c), it is expanded in the Y direction. The front end of the extended portion 7 is in a concave state (Y concave extended type). In addition, in FIG. 12 (d), the front end of the expansion portion 7 expanded in both the X direction and the Y direction is convexly protruding (XY convex expansion type), and in FIG. 12 (e), it becomes The front end of the expanded portion 7 that has been expanded in both the X direction and the Y direction is in a concave state (XY concave extended type). Among them, in the convex form shown in FIGS. 12 (b) and (d), the expansion amount on both sides of the convex portion is smaller than the expansion amount γ1 at the center of the convex portion (here, the so-called "more than "Small" includes the case of zero). Further, in the concave form shown in FIGS. 12 (c) and (e), the expansion amount at the center of the recessed portion is smaller than the expansion amount γ1 at both sides of the recessed portion (herein, "smaller" includes Is zero). In addition, the aspect of the extension portion may also be an aspect obtained by combining the shapes illustrated in FIG. 11 and FIG. 12 in a plurality of types. In addition, the optimal shape of the extended portion may be different depending on the respective widths or light transmittance settings of the first slit pattern 1 and the second slit pattern 2, and a more optimal shape can be selected by optical simulation. The shape of the extension is not limited to the shape exemplified above, and can be determined based on the design pattern of the BM. In addition, the exemplified expansion portion 7 has a symmetrical shape with the center of the width direction of the second slit pattern 2 as a reference, but it is not limited to this, and may be an asymmetric shape. Moreover, in the second embodiment of the present invention, a pattern in which the first slit pattern 1 and the second slit pattern 2 form a right angle is exemplified, but even the first slit pattern 1 and the second slit pattern 2 In a case where the formed angle is not a right angle, the above-mentioned extension can be provided. That is, the expansion portion can expand in the Y direction from the exit of the second slit pattern 2 (the boundary between the intersection region E3 and the second slit pattern 2), and also expand in the X direction if necessary. In this embodiment, it is possible to improve the BM transfer image by replacing a part of the light transmitting part corresponding to the intersecting area provided in the previous mask with a light transmitting part below the resolution limit (not independent resolution). Distributor. <Third Embodiment> A mask according to a third embodiment of the present invention is a person who solves a problem caused by the phenomenon (3) described above. FIG. 13 is a plan view schematically showing a light intensity distribution of a transfer image formed on a transferee body when a transfer pattern of the photomask of the reference form shown in FIG. 1 is exposed using a proximity exposure device. Here, it is emphasized that the part C (the occurrence of a strong light amount peak) shown in FIG. 4 (a) is exhibited. That is, there may be a case where a strong light peak is formed near the width center of the first slit pattern 1 and at a position corresponding to the middle of the two intersecting regions E3 adjacent in the X direction. If such a peak occurs, there is a risk that BM or the like (for example, a negative photosensitive resin) formed on the transferee body is locally hardened strongly, and unevenness is generated as a three-dimensional structure in height. (Mask of Third Embodiment) FIG. 14 is a plan view showing a configuration example of a pattern for transfer provided in a mask of a third embodiment of the present invention. The mask of the third embodiment of the present invention is the same as the mask of the first embodiment, and includes the first slit pattern 1, the second slit pattern 2, and the light-shielding pattern 3, which is the same as the first embodiment or the second embodiment. The difference between the embodiments is that as the auxiliary pattern, instead of having the wide portion or the extended portion (or having the wide portion or the extended portion), the auxiliary pattern has the following isolated pattern. In the photomask shown in FIG. 14, an isolated pattern 8 is provided in the first pattern forming region E1 where the first slit pattern 1 is formed. The isolated pattern 8 is formed so as to be located between two intersecting regions E3 adjacent to each other in the X direction. Here, the "isolated pattern" refers to an island-shaped isolated pattern, and as shown in FIG. 14, for example, it refers to an island-shaped pattern surrounded by a light-transmitting portion exposed by a transparent substrate. As shown in the figure, the isolated pattern 8 is arranged in the middle of a line near the center in the width direction of the first slit pattern 1 and connected to the center of gravity of the intersecting region E3 adjacent in the X direction. Here, one isolated pattern 8 is arranged in the middle of the cross region E3 adjacent in the X direction, but it may be arranged by separating it into a plurality of isolated patterns. When a plurality of isolated patterns are arranged, a plurality of isolated patterns may be arranged side by side in the width direction of the first slit pattern 1 at an intermediate point of the cross region E3 adjacent in the X direction. In either case, the center of gravity of the isolated pattern 8 is preferably at an equal distance from the intersection area E3. Specifically, the position of the isolated pattern 8 may be, for example, a position separated from the center of gravity of the intersection region E3 by a distance D3 (= 1 / 2Py) in the X direction. Moreover, the peak of the local light intensity can be reduced by the isolated pattern 8. The isolated pattern 8 may be a rectangular pattern including a translucent portion. However, the shape of the isolated pattern 8 may be a shape other than a rectangle. The isolated pattern 8 may be a light shielding portion through which light does not substantially pass. The fact that the light is substantially impermeable means that the optical density OD preferably satisfies the condition that OD ≧ 3. When the isolated pattern 8 is a semi-transmissive portion, it is preferable to form the isolated pattern 8 from a semi-transmissive portion (semi-transmissive film) having the same light transmittance as the second slit pattern 2. If the isolated pattern 8 is formed by the semi-transmissive portion, it is easier to select a size that does not independently resolve, so it is preferable. In the third embodiment, the size and shape of the isolated pattern 8 and the transmittance of the exposed light (in the case of a semi-transmissive part), the arrangement position, and the number can be selected by optical simulation. In the photomask according to the third embodiment of the present invention, a semi-light-transmitting portion or a light-shielding portion is formed in the first pattern forming area E1 so as to be located between two intersecting areas E3 adjacent to each other in the X direction. The isolated pattern 8 thereby suppresses local peaks of light intensity in the light intensity distribution of the transfer image formed by the first slit pattern 1 on the transfer target when the transfer pattern is subjected to close exposure. In addition, compared with the case where there is no isolated pattern 8, the transmitted light intensity of the first slit pattern 1 can be made uniform. Thereby, in the transfer image of the first slit pattern 1 formed on the body to be transferred, unnecessary fluctuations in light intensity (generation of strength) are reduced, and a more uniform light intensity transfer is obtained. image. Thereby, the light intensity distribution of the transfer image formed on the object to be transferred can be made close to the ideal light intensity distribution shown in FIG. 6. As a result, when CF is manufactured in the manufacturing process of the display device, unnecessary BM high variation can be suppressed. Moreover, the mask of this aspect can be set by replacing the part of the light transmitting part corresponding to the slit pattern (the first slit pattern) provided in the previous mask to the resolution limit or less (not independent resolution). The light-shielding portion or the semi-light-transmitting portion reduces unevenness in light intensity in the transferred image. In the first embodiment, the second embodiment, and the third embodiment described above, auxiliary patterns that adjust the shape of the BM image in order to improve the transferability of the grid-like pattern are shown. That is, in the first embodiment, a pair of convex portions 5 (wide portions 6) are exemplified as auxiliary patterns. In the second embodiment, the extended portions 7 are illustrated as auxiliary patterns. In the third embodiment, An isolated pattern 8 is exemplified as the auxiliary pattern. These auxiliary patterns can be applied separately when designing the pattern for the transfer of the photomask, or any two kinds of auxiliary patterns can be combined, and all auxiliary patterns can also coexist. In addition, as the photomask of the present invention is exemplified in the first to third embodiments described above, by having an auxiliary pattern that is not independently resolved on the transfer object, the BM formed on the transfer object can be improved. The uniformity of the light intensity of the image can thereby form finer BM finely. The photomask of the present invention can be produced, for example, by the following method. First, a blank photomask is prepared. The blank photomask is formed by laminating a semi-transmissive film 31 and a light-shielding film 32 on a transparent substrate 30 including quartz, and then forming a photoresist film thereon. The translucent film 31 may be a film containing any one of Cr, Ta, Zr, Si, and Mo, or a compound (oxide, nitride, carbide, oxynitride, or carbonitride) selected from these. , Carbonitrides, etc.). Alternatively, a compound of Si (such as SiON) or a transition metal silicide (such as MoSi) or a compound thereof (oxide, nitride, oxynitride, carbonitride, etc.) can be used. The light transmittance of the exposed light of the translucent film 31 is preferably 30 to 70%, and more preferably 40 to 60%. The material of the light shielding film 32 can also be selected from the above. In addition, when there is no etching selectivity between the semi-transmissive film 31 and the light-shielding film 32, the semi-transmissive film 31 and the light-shielding layer may be laminated between the films and an etching prevention film having an etching selectivity as necessary. Film 32. Next, for the blank mask, a desired pattern is drawn using a laser drawing device or the like, and the drawing and etching are performed a desired number of times, thereby making the mask of the present invention. As the etching, wet etching can be preferably used. The photomask of the present invention manufactured by the above method has at least a light-transmitting portion 22 and a light-shielding portion 23, and preferably has a semi-light-transmitting portion 21. The light-transmitting portion 22 is formed by exposing the transparent substrate 30, the light-shielding portion 23 is formed by forming at least the light-shielding film 32 on the transparent substrate 30, and the semi-transmissive portion 21 is formed by forming the semi-transparent film 31 on the transparent substrate 30. to make. In addition, the photomask of the present invention can transfer a pattern for transfer to a transfer target (a liquid crystal panel substrate, a CF substrate, or the like) by performing exposure using a proximity exposure device. In this case, light sources with wavelengths of 365 nm, 405 nm, and 436 nm can be preferably used. The proximity gap used for the proximity exposure is preferably about 40 to 300 μm, and more preferably, it can be set to a range of 100 to 150 μm. The photomask of the present invention can be used for the formation of BM as described above. In this case, if the relationship between the size of the transfer pattern of the photomask and the size of the grid-shaped BM formed by transferring the transfer pattern to the object to be transferred is specified, it is as follows. That is, if the width of the first slit pattern 1 in the transfer pattern of the photomask is W1 (μm), the width of the second slit pattern 2 is W2 (μm), and The line width of the BM pattern formed corresponding to the pattern 1 is set to L1 (μm), and the line width of the BM pattern formed corresponding to the second slit pattern 2 is set to L2 (μm), preferably L1 ≦ W1 L2 ≦ W2, more preferably L2 <W2, even more preferably 1. 2 ≦ W2 / L2 ≦ 3. By using such a photomask of the present invention, for example, a BM having an L2 of 2 to 10 μm and further 2 to 8 μm can be formed. In addition, by using the mask of the present invention, high-definition BM can be formed stably. The reason is that the following excellent effects can be obtained: in the optical image formed on the object to be transferred, it is not easy to form unnecessary undulations or irregularities in the light intensity distribution, and the change with respect to the close gap. The width is not easy to change. The photomask of the present invention may have an additional optical film or a functional film within a range that does not hinder the effect. For example, a reflection reduction film, an etching stopper film, and a conductive film may be added as needed. <Example> As an example of the present invention, an optical simulation was performed on a photomask for close exposure for BM formation. FIG. 15 is a plan view showing a pattern for transfer of a mask of a reference form for reference. The transfer pattern shown in the figure also includes a first slit pattern 1 including a light-transmitting portion, a second slit pattern 2 including a translucent portion, and a light-shielding pattern 3 including a light-shielding portion, as shown in FIG. 1 described above. . The first slit pattern 1 has a portion with a fixed width W1 (μm), and the second slit pattern 2 has a portion with a fixed width W2 (μm) smaller than the aforementioned W1. The pitch P1 in the Y direction of the first slit pattern 1, the pitch P2 in the X direction of the second slit pattern 2, the width W1 of the first slit pattern 1, and the width W2 of the second slit pattern 2 are set to as follows. P1 = 19 μm P2 = 57 μm W1 = 15 μm W2 = 9 μm It is assumed that the sub-pixel BM pattern of the following size is formed on the object to be transferred (negative-type photosensitive material) by the transfer pattern described above. L1 = 15 μm (target) L2 = 5 μm (target) FIG. 16 shows an optical image (transfer image) obtained by exposing a mask provided with the transfer pattern shown in FIG. 15 on the transfer target. ) Of the light intensity distribution. The conditions of the optical simulation applied in obtaining the illustrated light intensity distribution are as follows. Moreover, Gap in the figure represents the value of the proximity gap. The light intensity (%) is expressed as a relative value. Exposure wavelength (λ): 365 nm (single line) Collimation angle: 2. 0 deg.   Proximity gap: ｛100, 110, 120, 130, 140｝ μm Transmittance of translucent film: 53% Phase shift of translucent film: 0 deg.   Next, as shown in FIG. 17, an auxiliary pattern is introduced into the transfer pattern and an optical simulation is performed in the same manner as described above. The transfer pattern of FIG. 17 is one in which two wide portions (6, 6b), an extended portion 7 (Y convex extension type), and an isolated pattern 8 are introduced as auxiliary patterns with respect to the transfer pattern of FIG. Otherwise, they are common. The sizes of the auxiliary patterns applied here are as follows. D1 = 4. 8 μm α1 = 1. 0 μm β1 = 4. 0 μm D2 = 13. 5 μm α2 = 0. 5 μm β2 = 4. 0 μm γ1 = 4. 0 μm (Expansion amount on both sides of the convex part 2. 5 μm, wide width 3. 0 μm) D3 = 9. 5 μm δ1 = 6 μm δ2 = 4 μm FIG. 18 is a diagram showing a light intensity distribution of an optical image obtained on the object to be transferred by the transfer pattern of FIG. 17 described above. From this FIG. 18, the following can be understood. (I) In FIG. 18, the light amount (light intensity) of the transferred image of the second slit pattern 2 is increased compared to the above-mentioned FIG. 16. This means that the risk of disconnection of the BM pattern formed corresponding to the second slit pattern 2 is reduced. (II) In FIG. 18, the rounding caused by the decrease in the light amount of the opening angle of the BM image observed in the above FIG. 16 is suppressed, and the curvature of the opening angle is increased. In addition, in FIG. 18, compared with FIG. 16 described above, the fluctuation of the contour lines of the BM pattern along the X direction is also suppressed. As a result, the opening shape of the BM image is close to a rectangle, and the area with a light intensity of 30% or more is increased. This means that a CF with a large opening area and a bright CF can be obtained. (III) In FIG. 18, the strong light amount peak of the transfer image in the BM pattern in the X direction observed in the above FIG. 16 is suppressed, and a uniform light amount distribution is obtained throughout the X direction. This means that unnecessary unevenness is unlikely to occur in the BM's three-dimensional structure. From the results of the above optical simulations, it can be confirmed that the photomask of the present invention exhibits excellent effects.

1‧‧‧ the first slit pattern

2‧‧‧ 2nd slit pattern

3‧‧‧ shade pattern

5‧‧‧ convex

5b‧‧‧ convex

6‧‧‧ Wide section

6b‧‧‧ Wide

7‧‧‧ Extension

8‧‧‧ isolated pattern

21‧‧‧ translucent part

22‧‧‧Transmission Department

23‧‧‧Shading Department

30‧‧‧ transparent substrate

31‧‧‧ translucent film

32‧‧‧Light-shielding film

41‧‧‧1BM pattern

42‧‧‧ 2BM pattern

43‧‧‧BM image opening

44‧‧‧hardened part

45‧‧‧light reduction point

45b‧‧‧light reduction point

A‧‧‧Part

Part B‧‧‧

BM‧‧‧ Black Matrix

Part C‧‧‧

D1‧‧‧distance

d1‧‧‧distance

D2‧‧‧distance

d2‧‧‧distance

D3‧‧‧distance

E1‧‧‧The first pattern formation area

E2‧‧‧The second pattern formation area

E3‧‧‧Intersection

J‧‧‧Corner

K‧‧‧ Corner

L1‧‧‧ 1BM pattern 41 line width

Line width of L2‧‧‧2BM pattern 42

P1‧‧‧ pitch

P2‧‧‧ pitch

Part Q‧‧‧

R1‧‧‧Curvature

R2‧‧‧Curvature

Part S‧‧‧

W1‧‧‧Width

W2‧‧‧Width

W3‧‧‧Width

YE‧‧‧Corner

Z1‧‧‧part

Z2‧‧‧part

α1‧‧‧ protrusion

α2‧‧‧ protrusion

β1‧‧‧ protruding width

β2‧‧‧ protruding width

γ1‧‧‧Expansion

γ2‧‧‧Expansion

X‧‧‧ direction

Y‧‧‧ direction

FIG. 1 is a plan view showing a configuration example of a mask according to a reference form of the present invention. 2 (a) is a sectional view taken along the line H-H of FIG. 1, (b) is a sectional view taken along the line V1-V1 of FIG. 1, and (c) is a sectional view taken along the line V2-V2 of FIG. FIG. 3 is a plan view showing the arrangement relationship of the first pattern formation region, the second pattern formation region, and the intersection region. FIG. 4 (a) is a plan view schematically showing a light intensity distribution of a transfer image obtained on a transferee body when a near-exposure device is used to expose a transfer pattern of a mask in a reference form, (b) It is a plan view showing a BM image formed on a transfer target (negative photosensitive material) by the light intensity distribution shown in (a) in the figure. FIG. 5 (a) is a top plan view showing an enlarged periphery of a cross region of the transfer pattern of the photomask shown in FIG. 1, and FIG. 5 (b) is a diagram schematically showing a case where the transfer pattern is exposed using a proximity exposure device. A plan view of a light intensity distribution of a transfer image formed on a transfer target. FIG. 6 is a plan view schematically showing an ideal light intensity distribution of a transferred image. FIG. 7 is a plan view showing a configuration example of a transfer pattern provided in the mask according to the first embodiment of the present invention. 8 is a plan view schematically showing an example of a light intensity distribution of a transfer image obtained when a photomask according to the first embodiment of the present invention is used. FIG. 9 is a plan view showing another configuration example of a transfer pattern provided in the mask according to the first embodiment of the present invention. FIG. 10 is a plan view schematically showing a light intensity distribution of a transfer image formed on a transferee body when the transfer pattern of the photomask of the reference form shown in FIG. 1 is exposed by the proximity exposure device. 11 is a plan view showing a configuration example of a transfer pattern provided in a photomask according to a second embodiment of the present invention. 12 (a) to 12 (e) are plan views showing aspects of an extension portion that can be applied to a second embodiment of the present invention. FIG. 13 is a plan view schematically showing a light intensity distribution of a transfer image formed on a transferee body when a transfer pattern of the photomask of the reference form shown in FIG. 1 is exposed using a proximity exposure device. 14 is a plan view showing a configuration example of a transfer pattern provided in a photomask according to a third embodiment of the present invention. FIG. 15 is a plan view showing a transfer pattern of a mask in a reference form. FIG. 16 is a diagram showing a light intensity distribution of an optical image (transfer image) obtained by exposing a photomask provided with the transfer pattern shown in FIG. 15 on a transfer target. FIG. 17 is a plan view showing an example in which an auxiliary pattern is introduced into a pattern for transfer of a photomask. FIG. 18 is a diagram showing a light intensity distribution of an optical image obtained by the above-mentioned transfer pattern of FIG. 17 on an object to be transferred. 19 (a) is a schematic diagram showing a configuration example of a color filter, (b) is a diagram showing a mask pattern before miniaturization, and (c) is a diagram showing a mask pattern after miniaturization. FIG. 20 (a) is a diagram showing a CF pattern obtained using a transfer image of an ideal BM, and (b) is a diagram showing a CF pattern obtained using a transfer image of an actual BM.

Claims (9)

A photomask is characterized in that it is provided on a transparent substrate with a photomask for near-exposure for forming a black matrix transfer pattern on a target to be transferred, and the transfer pattern is arranged along the first The pattern forming area extending in the direction is referred to as a first pattern forming area, the pattern forming area extending in a second direction crossing the first direction is referred to as a second pattern forming area, and the first pattern forming area and the second When the area where the pattern formation area intersects is set as the intersection area, the first slit pattern is a portion of a slit pattern formed in the first pattern formation area that substantially includes a light transmitting portion and has a fixed width W1; The second slit pattern is a portion of the slit pattern formed in the second pattern formation region other than the intersection region that substantially includes a translucent portion and has a fixed width W2 that is smaller than the fixed width W1. And an auxiliary pattern, which is a pattern that is not independently resolved, and adjusts the shape of the black matrix image formed on the transferred body. As the photomask of claim 1, wherein the auxiliary pattern includes a pair of convex portions, the pair of convex portions are formed by partially protruding from both sides in the width direction of the second slit pattern, and include a translucent portion. For example, in the photomask of claim 2, wherein the pair of convex portions is restrained from the light intensity distribution of the transfer image formed by the second slit pattern on the transferee body when the transfer pattern is subjected to close exposure. The local decrease in the light intensity makes the transmitted light intensity of the second slit pattern uniform. The photomask according to any one of claims 1 to 3, wherein the auxiliary pattern includes an expansion portion, which is formed by expanding from the exit of the second slit pattern in at least the second direction, and includes a translucent unit. For example, the mask of claim 4, wherein the extension portion increases a curvature of a corner portion of a transfer image formed by the second slit pattern on the transfer target when the transfer pattern is subjected to close exposure. For example, the photomask of claim 1, wherein the auxiliary pattern includes an isolated pattern, and the isolated pattern is formed in the first pattern forming region and is formed between the two intersecting regions adjacent to each other in the first direction. Light transmitting or light shielding. For example, the photomask of claim 6, wherein the isolated pattern suppresses light intensity in a light intensity distribution of a transfer image formed by the first slit pattern on the transferee body when the transfer pattern is subjected to close exposure The local peak value makes the transmitted light intensity of the first slit pattern uniform. The mask of claim 6 or 7, wherein the shape of the isolated pattern is rectangular. A method for manufacturing a display device, comprising the steps of: preparing a photomask according to any one of claims 1 to 8; and transferring the pattern for transfer onto the object to be transferred using a proximity exposure device.