TW201833544A - Light-induced dielectrophoretic chip, microparticle sorting apparatus and microparticle sorting system - Google Patents

Abstract

A light-induced dielectrophoretic chip is provided, which includes a first and a second substrate, a first and a second conductive layer, a semiconductor layer, a fluid channel layer and a first and a second through hole. In the fluid channel layer, an injecting fluid channel and a first and a second sorted fluid channel intersect within a sorting region. The sorting region is at an internal electric field between the first and the second electrode layer, configured to perform sorting on a fluid under illumination on the semiconductor layer by a patterned light source. A first and a second accumulation region respectively connect with the first and the second sorted fluid channel, and are configured to accumulate different microparticles in the fluid. The first through hole penetrates through the second electrode layer and connects with the first accumulation region. The second through hole penetrates through the second electrode layer and connects with the second accumulation region.

Description

 Light-induced dielectrophoresis wafer, microparticle sorting device and microparticle sorting system  

The present invention relates to microparticle sorting, and more particularly to a photoinduced dielectrophoresis wafer, a microparticle sorting apparatus, and a microparticle sorting system.

The medical laboratory uses various medical analysis instruments to perform analysis of microparticles or biomolecules, and uses the analysis results to assist in the assessment of the physiological state of the organism. If only a single particle is to be analyzed. The fluid containing different microparticles needs to be sorted first. If the result of microparticle sorting is not good, it will cause subsequent analysis to be seriously affected and reduce the correctness of the analysis. On the other hand, the conventional microparticle sorting apparatus has a high hardware cost, and the time required for the sorting process is as long as several hours or even several tens of hours. How to overcome the above disadvantages has been one of the goals of the technical personnel in the related art.

It is an object of the present invention to provide a photo-induced dielectrophoresis wafer, a microparticle sorting apparatus and a microparticle sorting system which have at least the advantages of instant high sorting ratio, low hardware cost and low sorting processing time.

An aspect of the present invention provides a photo-induced dielectrophoretic wafer for sorting a fluid containing a first microparticle and a second microparticle, and comprising a first substrate and a second substrate a first electrode layer, a second electrode layer, a semiconductor layer, a first via hole, and a second via hole. The second substrate is disposed opposite to the first substrate. The first electrode layer is disposed on the first substrate and located between the first substrate and the second substrate. The second electrode layer is disposed on the second substrate and located between the first electrode layer and the second substrate. The second electrode layer and the first electrode layer are used to generate an internal electric field. The semiconductor layer is disposed on the first electrode layer and between the first electrode layer and the second electrode layer. The flow channel layer is disposed between the second electrode layer and the semiconductor layer, and defines an injection flow channel, a first separation flow channel, a second separation flow channel, a first collection region, and a second collection region, wherein the injection channel, The first sorting flow channel and the second sorting flow channel intersect in the sorting region, and the sorting region is located in the internal electric field and is used for irradiating the semiconductor layer by the patterned light source through the first substrate and the first electrode layer The fluid is sorted underneath. The injection flow path is used to guide the fluid flow to the sorting area, and the first sorting flow path and the second sorting flow path are respectively used to guide the sorted first micro particles and the second micro particles. The first collection zone and the second collection zone are respectively connected to the first sorting flow channel and the second sorting flow channel and respectively collect the first microparticles and the second microparticles, the volume of the first collection zone and the second collection zone Each is approximately 1 microliter to 1 milliliter. The first through hole penetrates the second electrode layer and is connected to the first collection region, and the second through hole penetrates the second electrode layer and is connected to the second collection region.

According to an embodiment of the invention, the widths of the first through hole and the second through hole are each about 0.3 mm.

According to still another embodiment of the present invention, each of the first collection area and the second collection area is a cylindrical space, and each of the first collection area and the second collection area has a diameter of about 10 mm.

Another aspect of the present invention is to provide a microparticle sorting system comprising a light-induced dielectrophoresis wafer, a carrier platform, and a projection module as described above. The carrier platform is used to carry a light-induced dielectrophoresis wafer and has a gap. The projection module is disposed under the carrying platform, and is configured to project a patterned light source toward the light-induced dielectrophoretic wafer, and the patterned light source passes through the gap and illuminates the sorting region, so that the light-induced dielectrophoretic wafer generates a photo-excitation effect and changes the first An internal electric field between the electrode layer and the second electrode layer.

Another aspect of the present invention is to provide a microparticle sorting apparatus comprising a photoinduced dielectrophoresis wafer, a first container, a second container, a first fixture, and a second fixture. The light-induced dielectrophoretic wafer is used to generate an internal electric field to sort the fluid containing the first microparticles and the second microparticles. The photoinduced dielectrophoretic wafer includes a first substrate, a second substrate, a first electrode layer, a second electrode layer, a semiconductor layer, a flow channel layer, a first via hole, and a second via hole. The second substrate is disposed opposite to the first substrate. The first electrode layer is disposed on the first substrate and located between the first substrate and the second substrate. The second electrode layer is disposed on the second substrate and located between the first electrode layer and the second substrate. The second electrode layer and the first electrode layer are used to generate an internal electric field. The semiconductor layer is disposed on the first electrode layer and between the first electrode layer and the second electrode layer. a flow channel layer disposed between the second electrode layer and the semiconductor layer, defining an injection flow channel, a first sorting flow channel, and a second sorting flow channel, wherein the injection flow channel, the first sorting flow channel, and the second The sorting flow channel intersects in the sorting area, and the sorting area is located in the internal electric field and is used for sorting the fluid under the illumination of the semiconductor layer by the patterned light source through the first substrate and the first electrode layer. The injection flow path is used to guide the fluid flow to the sorting area, and the first sorting flow path and the second sorting flow path are respectively used to guide the sorted first micro particles and the second micro particles. The first through hole penetrates the first substrate and the first electrode layer and is connected to the first sorting flow channel. The second through hole penetrates the first substrate and an electrode layer and is connected to the second sorting flow channel. The first container is configured to collect the first microparticles flowing out through the first through hole. The second container is configured to collect the second microparticles flowing out through the second through hole. The first fixing member is disposed on the first substrate and is configured to fix the position of the first container and open the open end of the first container toward the first through hole. The second fixing member is disposed on the first substrate and is configured to fix the position of the second container and the open end of the second container faces the second through hole.

According to still another embodiment of the present invention, the volumes of the first container and the second container are each about 3 ml.

According to still another embodiment of the present invention, the diameters of the first through hole and the second through hole are each about 1.2 mm.

According to still another embodiment of the present invention, the first fixing member and the second fixing member are elastic members and have a first passage and a second passage, respectively, such that the first microparticle and the second microparticle pass through the first passage and the second The passage flows into the first container and the second container.

Another aspect of the present invention is to provide a microparticle sorting system comprising the microparticle sorting device, the carrier platform and the projection module as described above. The carrier platform is configured to carry the microparticle sorting device and has a first gap. The projection module is disposed under the carrying platform, and is configured to project a patterned light source toward the light-induced dielectrophoretic wafer, the patterned light source passes through the first gap and illuminates the sorting region, so that the light-induced dielectrophoretic wafer generates a photo-exciting effect and changes An internal electric field between the first electrode layer and the second electrode layer.

According to an embodiment of the invention, the carrying platform further has a second notch and a third notch. When the carrying platform carries the microparticle sorting device, the first container and the second container pass through the second and third indentations, respectively.

100, 410A‧‧‧Light-induced dielectrophoresis wafer

110, 310‧‧‧ first substrate

120, 320‧‧‧ first electrode layer

130, 330‧‧‧ semiconductor layer

140, 340‧‧ ‧ flow layer

142, 342‧‧‧Injection runner

144A, 344A‧‧‧ first sorting runner

144B, 344B‧‧‧Second sorting runner

146A‧‧‧First collection area

146B‧‧‧Second collection area

148A‧‧‧First through hole connection channel

148B‧‧‧Second through hole connection channel

150, 350‧‧‧ second electrode layer

160, 360‧‧‧ second substrate

172, 372‧‧‧ injection holes

174A, 374A‧‧‧ first through hole

174B, 374B‧‧‧ second through hole

180, 380‧‧ ‧ sorting area

300, 410‧‧‧Microparticle sorting device

390A‧‧‧First container

390B‧‧‧Second container

392A‧‧‧First fixture

392B‧‧‧Second fixture

400‧‧‧Microparticle Sorting System

420‧‧‧Loading platform

420A‧‧‧ gap

430‧‧‧Projection Module

432‧‧‧Lighting elements

434‧‧‧Light modulator

440‧‧‧Image Observation Module

AC‧‧‧ power supply

C1‧‧‧ first microparticles

C2‧‧‧Second microparticles

D1‧‧‧Dielectrophoresis

D2‧‧‧ Negative Dielectrophoresis

PC‧‧‧Computer equipment

PL‧‧‧ patterned light source

W _146A , W _146B ‧‧‧ Diameter

W _148A , W _148B ‧‧‧Width

W _174A , W _174B , W _374A , W _374B ‧‧‧ caliber

W _390A , W _390B ‧‧‧ OD

For a more complete understanding of the embodiments and the advantages thereof, reference is made to the following description in conjunction with the accompanying drawings, wherein: FIG. 1A is a schematic diagram showing the structure of a light-induced dielectrophoresis wafer according to some embodiments of the present invention; [FIG. 1B] Is a schematic plan view of the flow channel layer of [Fig. 1A]; [Fig. 1C] is a schematic cross-sectional view of the light-induced dielectrophoresis wafer along the line A-A'-A1 of Fig. 1A; [Fig. 1D] is [Fig. 1A] a light-induced cross-sectional view of the dielectrophoretic wafer along the A-A'-A2 section line; [Fig. 2A] is a schematic view showing the electric field distribution of the light-induced dielectrophoresis wafer in Fig. 1A without being irradiated by the patterned light source; 2B is a schematic view showing the internal electric field distribution of the light-induced dielectrophoresis wafer irradiated by the patterned light source in FIG. 1A; FIG. 3A is a schematic view showing the structure of the microparticle sorting apparatus according to some embodiments of the present invention. [Fig. 3B] is a plan view of the flow channel layer in the light-induced dielectrophoresis wafer of Fig. 3A; [Fig. 3C] is a section along the line B-B'-B1 of the microparticle sorting device of Fig. 3A. Schematic; [Fig. 3D] is the micro of [Fig. 3A] A schematic cross-sectional view of the particle sorting apparatus along the line B-B'-B2; and [Fig. 4] is a schematic view of a microparticle sorting system in accordance with some embodiments of the present invention.

Embodiments of the invention are discussed in detail below. However, it will be appreciated that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific content. The examples discussed and disclosed are illustrative only and are not intended to limit the scope of the invention.

It will be understood that, although the terms "first," "second," and "third," may be used herein to describe various elements, parts, regions, layers and/or portions, these terms should not be construed as limiting. Elements, parts, regions, layers and/or parts. The terms are only used to distinguish one element, part, region, layer, and/or portion from another element, part, region, layer and/or portion.

Terms such as "about" or "about" as used herein are generally errors or ranges of index values that vary from technology to technology and are broadest in scope to those of ordinary skill in the art. Explain, thereby covering all deformations and similar structures. In some embodiments, the error or range of the above values is within twenty percent of the value, preferably within ten percent of the value, and more preferably within five percent of the value. . In the text, unless otherwise stated, the numerical values referred to are regarded as approximations, such as the error or range indicated by "about" or "about", or other approximations.

1A is a schematic diagram showing the structure of a light-induced dielectrophoresis wafer 100 in accordance with some embodiments of the present invention. The light-induced dielectrophoresis wafer 100 includes a first substrate 110, a first electrode layer 120, a semiconductor layer 130, a channel layer 140, a second electrode layer 150, and a second substrate 160, wherein the first electrode layer 120, the semiconductor layer 130, and the flow The track layer 140 and the second electrode layer 150 are both located between the oppositely disposed first substrate 110 and the second substrate 160. The first substrate 110 and the second substrate 160 are transparent substrates that can transmit light, such as a glass substrate or a plastic substrate, but are not limited thereto.

The first electrode layer 120 is disposed on the first substrate 110 and includes a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO) or other similar conductive materials.

The semiconductor layer 130 is disposed on the first electrode layer 120, which may include an indirect bandgap material such as tantalum, niobium or the like. Further, the crystalline form of the semiconductor layer 130 may be amorphous silicon, monocrystalline silicon, nanocrystalline silicon, polycrystalline silicon, or a combination thereof.

The flow channel layer 140 is disposed on the semiconductor layer 130. FIG. 1B is a schematic plan view of the flow channel layer 140. As shown in FIG. 1B, the flow channel layer 140 defines an injection flow channel 142, a first sorting flow channel 144A, a second sorting flow channel 144B, a first collection region 146A, and a second collection region 146B, wherein the flow channel 142 is injected. The first sorting flow path 144A and the second sorting flow path 144B intersect in the sorting area 180. The first collecting area 146A and the second collecting area 146B are respectively associated with the first sorting flow path 144A and the second sorting flow. The track 144B is connected, and the injection flow path 142 is connected to the injection hole 172. The flow channel layer 140 further defines a first through hole connecting passage 148A and a second through hole connecting passage 148B, wherein the first through hole connecting passage 148A connects the first collecting portion 146A and the first through hole 174A, and the second through hole is connected The passage 148B connects the second collection zone 146B and the second through hole 174B. In other embodiments, the first collection region 146A and the second collection region 146B are directly connected to the first through hole 174A and the second through hole 174B, respectively. The injection flow path 142 is used to guide the fluid injected through the injection hole 172 into the sorting area 180.

If the sorting area 180 is irradiated by the patterned light source PL, the internal electric field between the first electrode layer 120 and the second electrode layer 150 will be changed, so that different particles in the fluid are respectively directed to the first sorting flow path 144A. The second sorting flow path 144B is moved, and the sorted fine particles are guided to the first collection area 146A and the second collection area 146B by the first sorting flow path 144A and the second sorting flow path 144B, respectively. The first collection zone 146A and the second collection zone 146B may be cylindrical, polygonal columns, or other similarly shaped spaces. Herein, the microparticles may be biological cells, biomolecules, air particles, impurities in water or dielectric powder, and the like. In some embodiments, the microparticles subjected to the sorting process are micron-sized microparticles.

The second electrode layer 150 is disposed on the flow channel layer 140. In some embodiments, the second electrode layer 150 is a transparent conductive material such as indium tin oxide, indium zinc oxide, or other similar conductive material. In this embodiment, the first electrode layer 120 and the second electrode layer 150 are externally connected with an external power source to provide a voltage difference between the first electrode layer 120 and the second electrode layer 150, thereby being in the first electrode layer 120 and the second electrode layer 120. An internal electric field is generated between the electrode layers 150.

1C and 1D are schematic cross-sectional views of the light-induced dielectrophoresis wafer 100 taken along the line A-A'-A1 and along the line A-A'-A2, respectively. As shown in FIGS. 1C and 1D, the injection hole 172, the first through hole 174A, and the second through hole 174B are respectively connected to the injection flow through the second substrate 160 and the second electrode layer 150 from the top of the light-induced dielectrophoretic wafer 100. The track 142, the first via connection channel 148A and the second via connection channel 148B, wherein the injection hole 172 provides a means for fluid injection into the photoinduced dielectrophoretic wafer 100, and the first via 174A and the second via 174B respectively The first collection zone 146A and the second collection zone 146B are communicated with the external space, and as such, the gas in the flow channel layer 140 can be discharged through the first through hole 174A and the second through hole 174B during the particle sorting operation. .

In some embodiments, the thicknesses of the first substrate 110 and the second substrate 160 are each about 0.7 mm, and the thicknesses of the first electrode layer 120 and the second electrode layer 150 are each about 50 nm to 500 nm, and the semiconductor layer 130 The thickness of the channel layer 140 is approximately 30 microns to 100 microns. In addition, in some embodiments, the angle between the injection flow path 142 and the first sorting flow path 144A is about 169 degrees, and the angle between the first sorting flow path 144A and the second sorting flow path 144B is about At 22 degrees, the widths of the injection flow path 142, the first separation flow path 144A, and the second separation flow path 144B are each about 0.8 mm to 20 mm, and the volumes of the first collection area 146A and the second collection area 146B are each approximately 1 microliter to 1 milliliter, a first connection passage 148A through hole _148A and the second width W is via connection passage 148B _148B each width W is about 0.3 mm, injection hole 172 is about 1.1 mm in diameter, and the first pass W is diameter of holes _174A and 174A of the second through-hole diameter W _{174B 174B} are each about 0.5 to 1.5 mm. In some embodiments, the size of the sorting region 180 is approximately 1 mm x 1 mm to 10 mm x 10 mm. The values such as the thickness, the width, and the angle of each portion of the light-induced dielectrophoresis wafer 100 can be adjusted according to actual needs, and are not limited to the above values. For example, if the object to be subjected to the sorting process is a fluid containing tumor cells and white blood cells, the thickness of the channel layer 140 may be about 30 micrometers, and the volumes of the first collection zone 146A and the second collection zone 146B may each be about 3.9 ml, the diameter of the first collecting region W _{146A 146A} collecting region and a second diameter W _{146B 146B} can each be approximately 10 mm, and the diameter of the first through hole 174A and the second through-hole _174A W is W 174B of aperture Each of _174B can be approximately 0.8 mm.

In addition, in some embodiments, the first substrate 110 and the second substrate 160 both have power supply holes (not shown), so that both ends of the external power source can be perforated through the first substrate 110 and the second through the power sources respectively. The substrate 160 is electrically connected to the first electrode layer 120 and the second electrode layer 150, respectively.

2A and 2B are schematic diagrams showing electric field distributions of the photoinduced dielectrophoresis wafer 100 under illumination by the patterned light source PL and by the patterned light source PL, respectively. As shown in FIG. 2A, in the photo-induced dielectrophoresis wafer 100, the first electrode layer 120 and the second electrode layer 150 are electrically connected to the two ends of the power source AC, respectively, so that the first electrode is not irradiated by the patterned light source PL. A uniform electric field is generated between the layer 120 and the second electrode layer 150, and at this time, the first microparticle C1 and the first microparticle C2 are not affected by the uneven electric field and move in a specific direction. The voltage and frequency of the voltage generated by the power source AC may be 1 volt to 50 volts and 1 kHz to 100 Hz, respectively, preferably 15 volts to 25 volts and 100,000 Hz to 1 million Hz, respectively. As shown in FIG. 2B, under the illumination of the patterned light source PL, the light-induced dielectrophoretic wafer 100 generates a photoexcitation effect to change the electric field distribution between the first electrode layer 120 and the second electrode layer 150, so that the first microparticle C1 Moved to the irradiation of the patterned light source PL by the action of the positive DEP force D1, and the second microparticle C2 is moved to the patterned light source PL by the action of the negative DEP force D2. Irradiated outside. The first microparticle C1 may be a colon cancer cell, a lung cancer cell, a breast cancer cell, and/or other similar tumor cells, and the second microparticle C2 may be, for example, a white blood cell and/or other similar cells.

FIG. 3A is a schematic structural view of a microparticle sorting apparatus 300 according to an embodiment of the present invention. The microparticle sorting apparatus 300 includes a light-induced dielectrophoresis wafer, a first container 390A, a second container 390B, a first fixture 392A, and a second fixture 392B (a first container 390A, a second container 390B, a first fixture 392A, and The second fixing member 392B is shown in FIG. 3C and FIG. 3D), wherein the first container 390A and the second container 390B are respectively used to collect different microparticles sorted by the light-induced dielectrophoresis wafer, and the first fixing member 392A and the second The fixing member 392B is disposed on the first substrate 310 of the photo-induced dielectrophoresis wafer to fix the positions of the first container 390A and the second container 390B, respectively.

The photo-induced dielectrophoresis wafer includes a first substrate 310, a first electrode layer 320, a semiconductor layer 330, a channel layer 340, a second electrode layer 350, and a second substrate 360, wherein the first electrode layer 320, the semiconductor layer 330, and the flow channel The layer 340 and the second electrode layer 350 are both located between the oppositely disposed first substrate 310 and second substrate 360. The first substrate 310, the first electrode layer 320, the semiconductor layer 330, the second electrode layer 350, and the second substrate 360 are respectively associated with the first substrate 110, the first electrode layer 120, the semiconductor layer 130, and the photo-induced dielectrophoretic wafer 100. The second electrode layer 150 is similar to the second substrate 160. Therefore, please refer to the previous paragraph for related description, and details are not described herein.

The flow channel layer 340 is disposed on the semiconductor layer 330. FIG. 3B is a schematic plan view of the flow channel layer 340. As shown in FIG. 3B, the flow channel layer 340 defines an injection flow path 342, a first separation flow path 344A, and a second separation flow path 344B, wherein the injection flow path 342 is connected to the injection hole 372, and the first separation flow path 344A And the second sorting flow channel 344B is connected to the first through hole 374A and the second through hole 374B, respectively, and the injection flow path 342, the first sorting flow path 344A and the second sorting flow path 344B intersect in the sorting area 380. . The injection flow path 342 is used to guide the fluid injected through the injection hole 372 into the sorting region 380. If the sorting region 380 is illuminated by the patterned light source PL, the internal electric field between the first electrode layer 320 and the second electrode layer 350 will change, so that different particles in the fluid are respectively directed to the first sorting channel 344A. Moving in the direction of the second sorting flow path 344B, and the sorted fine particles are guided to the first through hole 374A and the second through hole 374B by the first sorting flow path 344A and the second sorting flow path 344B, respectively, and The light is discharged to the outside of the photo-induced dielectrophoretic wafer via the first through hole 374A and the second through hole 374B, respectively.

3C and 3D are schematic cross-sectional views of the microparticle sorting apparatus 300 taken along the line B-B'-B1 and along the line B-B'-B2, respectively. As shown in FIG. 3C and FIG. 3D, the injection hole 372 is respectively connected to the injection flow path 142 through the second substrate 360 and the second electrode layer 350 from the top of the light-induced dielectrophoretic wafer, and the first through hole 374A and the second pass The hole 174B is connected to the first sorting flow path 344A and the second sorting flow path 344B through the first substrate 310, the first electrode layer 320, and the semiconductor layer 330 from the bottom of the photo-induced dielectrophoretic wafer, wherein the injection hole 372 is provided The fluid is injected into the light-induced dielectrophoresis wafer, and the first via 374A and the second via 374B provide a means for the sorted microparticles to flow out of the photoinduced dielectrophoretic wafer.

The openings of the first container 390A and the second container 390B are respectively oriented toward the first through hole 374A and the second through hole 374B, and the first container 390A and the second container 390B are respectively respectively performed by the first fixing member 392A and the second fixing member 392B Fixed at a specific position of the photo-induced dielectrophoresis wafer (ie, at the first through hole 374A and the second through hole 374B), the sorted different microparticles can be respectively passed through the first container 390A by the action of gravity. And the passage in the second container 390B flows into the first container 390A and the second container 390B. After the sorted microparticle collection is completed, the first container 390A and the second container 390B can be separated from the photoinduced dielectrophoretic wafer. The first container 390A and the second container 390B may be tubular containers such as test tubes or any other container capable of collecting fine particles, and the first fixing member 392A and the second fixing member 392B may be elastic members such as rubber rings, buckles or Any other component that can fix the position of the first container 390A and the second container 390B on the photo-induced dielectrophoresis wafer.

In some embodiments, the thickness of the flow channel layer 340 is approximately 30 micrometers to 100 micrometers, and the angle between the injection flow channel 342 and the first sorting flow channel 344A is approximately 169 degrees. The first sorting flow channel 344A and the first The angle between the two sorting channels 344B is about 22 degrees, and the widths of the injecting channel 342, the first sorting channel 344A and the second sorting channel 344B are each about 0.8 mm to 20 mm, and the injection hole 372 is diameter of about 1.1 mm, the diameter of the first through hole 374A and the second through-hole _374A W is W _{374B 374B} each aperture is approximately from 0.5 to 1.5 mm, and the separation area 380 size of about 1 mm × 1 mm to 10 Mm x 10 mm. Further, in some embodiments, W is the outside diameter _390A of the first container and the second container 390A 390B _390B W is an outer diameter of about 1.6 mm each, the volume of the first container 390A 390B and the second container are each about 3 mL, And the maximum sleeve inner diameter of the first fixing member 392A and the second fixing member 392B are each at least about 1.8 mm. The values such as the thickness, the width, and the angle of each part of the microparticle sorting apparatus 300 can be adjusted according to actual needs, and are not limited to the above values. For example, if the object to be subjected to the sorting process is a fluid containing tumor cells and white blood cells, the thickness of the channel layer 340 may be about 30 μm, and the diameter W _374A and the second through hole of the first through hole 374A. The caliber W _{374B of the 374B} may each be approximately 1.2 mm.

In addition, in some embodiments, the first substrate 310 and the second substrate 360 both have power supply holes (not shown), so that both ends of the external power source can be perforated through the first substrate 310 and the second through the power sources respectively. The substrate 360 is electrically connected to the first electrode layer 320 and the second electrode layer 350, respectively. 4 is a schematic illustration of a microparticle sorting system 400 in accordance with some embodiments of the present invention. The microparticle sorting system 400 includes a microparticle sorting device 410, a carrying platform 420, a projection module 430, and an image observing module 440. The microparticle sorting device 410 comprises a photo-induced dielectrophoresis wafer 410A, which uses different dielectrophoresis force (DEP force) principles to move different microparticles to different places by different electrophoresis force (DEP force). . As such, different microparticles can be sorted by photo-induced dielectrophoresis wafer 410A. The microparticle sorting device 410 can be, for example, the microparticle sorting device 300 of FIGS. 3A-3D, and the photoinduced dielectrophoretic wafer 410 can be, for example, the light-induced dielectrophoresis wafer 100 of FIGS. 1A-1D or the light of FIGS. 3A-3D The dielectrophoresis wafer is induced.

The carrier platform 420 is configured to carry the microparticle sorting device 410 and has a notch 420A such that the light source can be projected through the notch 420A to the photo-induced dielectrophoretic wafer 410A. Additionally, in some embodiments, the carrier platform 420 has a receiving structure to receive and secure the position of the particle sorting device 410. The accommodating structure may be an annular convex structure, a rectangular recessed structure, a cassette structure or any other structure that can fix the position of the microparticle sorting device 410. In the embodiment where the microparticle sorting device 410 is the microparticle sorting device 300 of FIGS. 3A-3D, the carrying platform 420 may further include two additional indentations such that when the carrying platform 420 carries the microparticle sorting device 300, the first container 390A And the second container 390B passes through the two additional gaps, respectively.

The projection module 430 is configured to generate the patterned light source PL, and project the patterned light source PL through the open area 420A of the carrying platform 420 to the light-induced dielectrophoretic wafer 410A. The luminous exitance of the projection module 430 and the wavelength range of the patterned light source PL generated therefrom may be between 9 million lux and 120,000 lux and between 280 nm and 1400 nm, respectively. between. The projection module 430 includes a light emitting element 432 and a light modulator 434. The light-emitting element 432 is used to generate a light source, which may be, for example, a light bulb, a light-emitting diode, or a laser, but is not limited thereto. For example, the light-emitting element 432 can be a light-emitting diode that emits a light source that includes wavelengths of visible light. The light modulator 434 converts the light source generated by the light-emitting element 432 into a patterned light source PL, and projects the patterned light source PL onto a sorting region of the light-induced dielectrophoretic wafer 410A (eg, the sorting region 180 of the light-induced dielectrophoretic wafer 100). Or a sorting region 380) of the light-induced dielectrophoresis wafer. In some embodiments, the light modulator 434 is a digital micromirror device (DMD) or a liquid crystal on silicon (LCoS) element that receives the light source emitted by the light emitting element 432, and according to the figure The image material converts the received light source into a patterned light source PL. The projection module 430 can communicatively connect the computer device PC to receive image data from the computer device PC, and determine the output patterned light source PL by the received image data. In detail, the projection module 430 can communicate with the computer device PC by wired communication (such as VGA, HDMI, eDP, USB) or wireless communication (such as WiFi, Bluetooth), and the computer device PC transmits image data to the projection. The module 430 then converts the light source emitted by the light-emitting element 432 into the patterned light source PL according to the image data via the processing of the light modulator 434. The projection module 430 may further comprise elements such as lenses and/or mirrors for adjusting the focal length and/or plane range of the patterned light source PL and the like.

The image viewing module 440 is disposed above the light-induced dielectrophoresis wafer 410A for viewing by the user in the sorting of the light-induced dielectrophoresis wafer 410A. In some embodiments. The image observing module 440 includes an image processing unit (not shown), which can perform image analysis processing on the captured sorting scene image to generate an analysis result, and can adjust the microparticle sorting system 400 according to the analysis result. Parameters such as the planar projection pattern, intensity and/or wavelength of the patterned light source PL generated by the projection module 430, the distance between the light-induced dielectrophoretic wafer 410A and the projection module 430, and the sorting area of the light-induced dielectrophoretic wafer 410A. The size and / or other adjustable parameters and so on. Moreover, in some embodiments, the position of the image viewing module 440 is adjustable. For example, in the embodiment where the light-induced dielectrophoresis wafer 410A is the light-induced dielectrophoresis wafer 100 of FIGS. 1A-1D, the image observation module 440 can be moved to the first collection area 146A or the second collection area 146B. The microparticle collection situation in the first collection zone 146A or the second collection zone 146B is observed in real time. In other embodiments, the image observing module 440 can be coupled or communicatively coupled to an entity having an image analysis function (eg, a computer device PC), and the steps of the image analysis process can be performed in the entity.

In addition, the microparticle sorting system 400 can further include a lens (not shown) disposed between the photo-induced dielectrophoresis wafer 410A and the projection module 430 to adjust the size of the sorting region of the photo-induced dielectrophoretic wafer 410A. The adjustment factor of the lens (not shown) may be determined according to the architecture of the microparticle sorting system 400, such as the distance between the photoinduced dielectrophoretic wafer 410A and the projection module 430, and the structure of the runner layer in the photoinduced dielectrophoretic wafer 410A. And/or the light emission degree of the projection module 430 or the like. A lens (not shown) may be disposed in the notch 420A of the carrier platform 420, between the light-induced dielectrophoresis wafer 410A and the notch 420A, or between the notch 420A and the projection module 430.

In addition, in some embodiments, the carrier platform 420 further includes a conductive member (not shown) that is electrically connected to the medium of the light-induced dielectrophoresis wafer 410A as an external power source, and may be a connector, a cassette, or the like. . When the microparticle sorting device 410 is fixed to the carrying platform 420, the electrode layer in the photo-induced dielectrophoretic wafer 410A can be electrically connected to the conductive members to receive power from an external power source.

The light-induced dielectrophoresis wafer, the microparticle sorting device and the microparticle sorting system of the present invention can sort out different microparticles and facilitate the collection of the sorted microparticles, thereby facilitating the analysis of the subsequent microparticles. In addition, the light-induced dielectrophoresis wafer, the microparticle sorting device and the microparticle sorting system of the present invention have the advantages of low hardware cost and can be sorted in a relatively short time with high purity compared to the conventional microparticle sorting apparatus. The microparticles are therefore ideal for applications in the biological and medical fields, such as biochemical processing and laboratory medicine.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

Claims (10)

 A light-induced dielectrophoresis wafer for sorting a fluid containing a first microparticle and a second microparticle, the photo-induced dielectrophoretic wafer comprising: a first substrate; a second substrate, the second substrate The first electrode layer is disposed on the first substrate and located between the first substrate and the second substrate; a second electrode layer is disposed on the second substrate Between the first electrode layer and the second substrate, the second electrode layer and the first electrode layer are used to generate an internal electric field; a semiconductor layer is disposed on the first electrode layer and located at the first electrode Between the layer and the second electrode layer; a first-level channel layer disposed between the second electrode layer and the semiconductor layer, the channel layer defining an injection flow channel, a first sorting flow channel, and a second branch a flow channel, a first collection zone and a second collection zone, wherein the injection flow channel, the first separation flow channel and the second separation flow channel intersect in a sorting area, the sorting area is located The internal electric field is used to pass the first base through a patterned light source Separating the fluid with the first electrode layer and irradiating the semiconductor layer, the injection flow channel is for guiding the fluid flow to the sorting area, the first sorting flow channel and the second The first flow collection area and the second collection area are respectively connected to the first separation flow channel and the second separation flow channel respectively. And respectively for collecting the first microparticles and the second microparticles, the volume of the first collection zone and the second collection zone are each about 1 microliter to 1 milliliter; a first through hole penetrating the second electrode layer And connecting the first collection region; and a second through hole penetrating the second electrode layer and connecting the second collection region.    The light-induced dielectrophoresis wafer of claim 1, wherein the first through hole and the second through hole each have a width of about 0.3 mm.    The light-induced dielectrophoresis wafer of claim 1, wherein the first collection area and the second collection area are each a cylindrical space, and the diameters of the first collection area and the second collection area are respectively It is about 10 mm.    A microparticle sorting system, comprising: the photoinduced dielectrophoresis wafer according to any one of claims 1 to 3; a carrying platform for carrying the photoinduced dielectrophoretic wafer, the carrying platform having a gap And a projection module disposed under the carrying platform, the projection module is configured to project a patterned light source toward the light-induced dielectrophoretic wafer, the patterned light source passes through the gap and illuminates the sorting region, such that The photoinduced dielectrophoretic wafer produces a photoexcitation effect that changes the internal electric field between the first electrode layer and the second electrode layer.    A microparticle sorting apparatus comprising: a photo-induced dielectrophoretic wafer for generating an internal electric field for sorting a fluid comprising a first microparticle and a second microparticle, the method comprising: a first substrate; a second substrate, the second substrate is disposed opposite to the first substrate; a first electrode layer is disposed on the first substrate and located between the first substrate and the second substrate; a second electrode layer, And disposed on the second substrate between the first electrode layer and the second substrate, the second electrode layer and the first electrode layer are used to generate an internal electric field; a semiconductor layer is disposed on the first electrode a layer on the layer between the first electrode layer and the second electrode layer; a first-order layer disposed between the second electrode layer and the semiconductor layer, the channel layer defining an injection channel, a first point Selecting a flow channel and a second sorting flow channel, the first flow channel and the second sorting channel intersecting in a sorting region, wherein the sorting region is located in the internal electric field For passing a patterned light source through the first substrate and the first An electrode layer is subjected to sorting treatment of the fluid under irradiation of the semiconductor layer, wherein the injection channel is used to guide the fluid flow to the sorting region, and the first sorting channel and the second portion Selecting flow channels respectively for guiding the first microparticles and the second microparticles; a first through hole penetrating the first substrate and the first electrode layer and connecting the first sorting flow channel; and a a second through hole penetrating the first substrate and the first electrode layer and connected to the second sorting flow channel; a first container for collecting the first microparticles flowing out through the first through hole; a container for collecting the second microparticles flowing out through the second through hole; a first fixing member disposed on the first substrate and fixing the position of the first container and opening one of the first containers The end faces the first through hole; and a second fixing member is disposed on the first substrate and is configured to fix the position of the second container and open the open end of the second container toward the second through hole.    The microparticle sorting device of claim 5, wherein the first container and the second container each have a volume of about 3 ml.    The microparticle sorting device of claim 5, wherein the first through hole and the second through hole each have a diameter of about 1.2 mm.    The microparticle sorting device of claim 5, wherein the first fixing member and the second fixing member are elastic members and respectively have a first passage and a second passage, such that the first microparticle and the first microparticle The second microparticles flow into the first container and the second container via the first channel and the second channel, respectively.    A microparticle sorting system, comprising: the microparticle sorting device according to any one of claims 5 to 8; a carrying platform for carrying the microparticle sorting device, the carrying platform having a first gap And a projection module disposed under the carrying platform, the projection module is configured to project a patterned light source toward the light-induced dielectrophoretic wafer, and the patterned light source passes through the first gap and illuminates the sorting area. The photoinduced dielectrophoretic wafer is caused to produce a photoexcitation effect to change an internal electric field between the first electrode layer and the second electrode layer.    The microparticle sorting system of claim 9, wherein the carrying platform further has a second notch and a third notch; wherein, when the carrying platform carries the microparticle sorting device, the first container and The second container passes through the second gap and the third gap, respectively.