TW201832868A - Carrier for double-sided polishing device - Google Patents
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- TW201832868A TW201832868A TW107105866A TW107105866A TW201832868A TW 201832868 A TW201832868 A TW 201832868A TW 107105866 A TW107105866 A TW 107105866A TW 107105866 A TW107105866 A TW 107105866A TW 201832868 A TW201832868 A TW 201832868A
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Abstract
本發明提供一種雙面研磨裝置用載體,包含形成有於研磨時用以支承晶圓的支承孔的載體母件、及沿著支承孔的內周而配置的插入件,其中,載體母件為沿著支承孔的內周週期性地形成有凹凸部,凹凸部中鄰接的凹部的中心彼此的距離在10mm以上60mm以下,凹凸部中的凸部的面積較凹部的切口部分的面積為大,插入件於外周部週期性地形成有一凹凸部,而載體母件的形成於支承孔的內周的凹凸部與形成於插入件的外周部的凹凸部嵌合,藉此,提供載體母件的支承孔周邊部分(嵌合部分)的扭曲被減少的雙面研磨裝置用載體。The present invention provides a carrier for a double-side polishing apparatus, comprising a carrier member formed with a support hole for supporting a wafer during polishing, and an insert disposed along an inner circumference of the support hole, wherein the carrier member is The uneven portion is periodically formed along the inner circumference of the support hole, and the distance between the centers of the adjacent concave portions in the uneven portion is 10 mm or more and 60 mm or less, and the area of the convex portion in the uneven portion is larger than the area of the cut portion of the concave portion. The insert is periodically formed with a concavo-convex portion on the outer peripheral portion, and the concavo-convex portion of the carrier member formed on the inner circumference of the support hole is fitted to the concavo-convex portion formed on the outer peripheral portion of the insert, whereby the carrier member is provided. The carrier for the double-side polishing apparatus in which the distortion of the peripheral portion (fitting portion) of the support hole is reduced.
Description
本發明係關於一種能夠用於將晶圓雙面研磨的雙面研磨裝置的雙面研磨裝置用載體。The present invention relates to a carrier for a double-side polishing apparatus which can be used for a double-side polishing apparatus for polishing a wafer on both sides.
由於雙面研磨裝置每一批次同時研磨例如5片的晶圓的雙面,因此於定盤上設置有具有與晶圓數量相同的支承孔的雙面研磨機用載體。晶圓藉由載體的支承孔而被支承,藉由設置於上下定盤的研磨布自雙面夾入晶圓,一邊於研磨面供給研磨劑一邊進行研磨。Since the double-side polishing apparatus simultaneously polishes both sides of, for example, five wafers in each batch, a carrier for a double-side grinder having the same number of support holes as the number of wafers is provided on the fixed plate. The wafer is supported by the support hole of the carrier, and the polishing cloth provided on the upper and lower fixed plates is inserted into the wafer from both sides, and is polished while supplying the polishing agent on the polishing surface.
雙面研磨裝置用載體,其具有用以支承晶圓的支承孔的載體母件,通常為金屬製。雙面研磨裝置用載體為了自金屬製的載體母件保護晶圓的外周部,於晶圓支承孔內周具有樹脂製的插入件。此插入件為藉由嵌入成型或射出成型以形成。插入件與晶圓的外周部接觸,因此對晶圓的邊緣形狀的製成為重要。A carrier for a double-side polishing apparatus having a carrier member for supporting a support hole of a wafer, usually made of metal. The carrier for the double-side polishing apparatus protects the outer peripheral portion of the wafer from a carrier member made of metal, and has a resin insert on the inner circumference of the wafer support hole. This insert is formed by insert molding or injection molding. The insert is in contact with the outer peripheral portion of the wafer, so the formation of the edge shape of the wafer is important.
於安裝此插入件時,為了防止晶圓加工中及搬運時插入件脫落,會在插入件的外周部及載體母件的支承孔的內周部形成楔狀而嵌合,進一步亦有以接著劑固定(專利文獻1)。When the insert is mounted, in order to prevent the insert from falling off during wafer processing and transportation, a wedge shape is formed on the outer peripheral portion of the insert and the inner peripheral portion of the support hole of the carrier member, and further, The agent is fixed (Patent Document 1).
〔先前技術文獻〕 專利文獻1:日本特開2000-24912號公報[Prior Art Document] Patent Document 1: Japanese Patent Laid-Open Publication No. 2000-24912
插入件的外周部與載體母件的支承孔的內周部的楔型為周期性複數個存在,可能在載體的加工時產生扭曲。進一步,可能有於插入件嵌合時,由於加工精度而部分鑲嵌變緊,產生局部應力而載體母件的支承孔周邊扭曲的問題。又此載體母件的支承孔周邊的嵌合部分的扭曲,會引起晶圓的邊緣形狀的惡化,又會使載體母件與插入件產生錯位。The wedge shape of the outer peripheral portion of the insert and the inner peripheral portion of the support hole of the carrier member is periodically plural, which may cause distortion during processing of the carrier. Further, there may be a problem that the insert is tightened due to the processing precision when the insert is fitted, and local stress is generated and the periphery of the support hole of the carrier member is twisted. Further, the distortion of the fitting portion around the support hole of the carrier member causes deterioration of the edge shape of the wafer, which causes the carrier member and the insert to be misaligned.
在此狀態下進行晶圓加工則研磨布將局部變形,引起晶圓平坦度的惡化。又載體母件與插入件的錯位,雖然能夠藉由研磨將載體母件與插入件在一定程度上修正至同等的高度,但是無法修正載體母件的支承孔周邊的嵌合部分的扭曲。結果會由於此扭曲而引起晶圓的邊緣形狀的惡化。又由於晶圓形狀的惡化程度會因扭曲的大小而變化,即便在5片一組的載體間亦可能會有於平坦度產生參差的問題。因此,為了抑制晶圓的邊緣形狀的惡化與載體間的平坦度的參差,亦需求有載體母件的支承孔周邊部分(嵌合部分)的扭曲較少的雙面研磨裝置用載體。When wafer processing is performed in this state, the polishing cloth is locally deformed, causing deterioration of wafer flatness. Further, although the carrier member and the insert are misaligned, the carrier member and the insert can be corrected to the same height to some extent by grinding, but the distortion of the fitting portion around the support hole of the carrier member cannot be corrected. As a result, the edge shape of the wafer deteriorates due to this distortion. Further, since the degree of deterioration of the shape of the wafer varies depending on the size of the distortion, there is a possibility that the flatness may be uneven between the five-piece carriers. Therefore, in order to suppress the deterioration of the edge shape of the wafer and the unevenness of the flatness between the carriers, it is also required to have a carrier for the double-side polishing apparatus having less distortion of the peripheral portion (fitting portion) of the support hole of the carrier member.
本發明鑑於上述問題,目的在於提供一種降低了載體母件的支承孔周邊部分(嵌合部分)的扭曲的雙面研磨裝置用載體。The present invention has been made in view of the above problems, and an object thereof is to provide a carrier for a double-side polishing apparatus which reduces distortion of a peripheral portion (fitting portion) of a support hole of a carrier member.
為了解決上述問題,本發明提供一種雙面研磨裝置用載體,係配設於將晶圓雙面研磨的雙面研磨裝置中,包含形成有於研磨時用以支承晶圓的一支承孔的一載體母件、及沿著該支承孔的內周而配置且形成有與晶圓外周部相接觸的內周部的一插入件,其中,該載體母件為沿著該支承孔的內周週期性地形成有一凹凸部,該凹凸部中鄰接的凹部的中心彼此的距離在10mm以上60mm以下,於該載體母件的平面方向中該凹凸部中的凸部的面積較凹部的切口部分的面積為大,該插入件於外周部週期性地形成有一凹凸部而與形成於該支承孔的內周的該凹凸部得以嵌合,該載體母件的形成於該支承孔的內周的該凹凸部與該插入件的形成於外周部的該凹凸部嵌合。In order to solve the above problems, the present invention provides a carrier for a double-side polishing apparatus, which is disposed in a double-side polishing apparatus for polishing a wafer on both sides, and includes a support hole formed to support a wafer during polishing. a carrier member and an insert disposed along an inner circumference of the support hole and formed with an inner peripheral portion in contact with an outer peripheral portion of the wafer, wherein the carrier member is an inner circumference period along the support hole Optionally, a concave-convex portion is formed, and a distance between centers of adjacent concave portions in the concave-convex portion is 10 mm or more and 60 mm or less, and an area of the convex portion in the concave-convex portion is smaller than an area of the cutout portion of the concave portion in a planar direction of the carrier member To the extent that the insert is periodically formed with a concavo-convex portion on the outer peripheral portion and fitted to the concavo-convex portion formed on the inner circumference of the support hole, the unevenness of the carrier member formed on the inner circumference of the support hole The portion is fitted to the uneven portion formed on the outer peripheral portion of the insert.
若為如此的雙面研磨裝置用載體,則會是降低了載體母件的支承孔周邊部分(嵌合部分)的扭曲的雙面研磨裝置用載體。In the case of such a double-side polishing apparatus carrier, the carrier for a double-side polishing apparatus which reduces the distortion of the peripheral portion (fitting portion) of the support hole of the carrier member.
又於此時,該載體母件的形成於該支承孔的內周的該凹部的切口部分的形狀為三角形、長方形、梯形、楔形、鑰匙孔形、U形、及圓形中任一種。Further, at this time, the shape of the cutout portion of the recess formed in the inner circumference of the support hole of the carrier member is a triangle, a rectangle, a trapezoid, a wedge, a keyhole, a U, and a circle.
本發明的雙面研磨裝置用載體中,作為載體母件的形成於支承孔之內周的凹部的切口部分的形狀,可列舉上述形狀。In the carrier for a double-side polishing apparatus of the present invention, the shape of the slit portion of the concave portion formed on the inner circumference of the support hole as the carrier member may be as described above.
又於此時,以該載體母件的形成於該支承孔的內周的該凹凸部中,於該載體母件的平面方向中該凸部的面積為該凹部的切口部分的面積的4倍以上為佳。Further, at this time, in the uneven portion of the carrier mother member formed on the inner circumference of the support hole, the area of the convex portion in the planar direction of the carrier member is 4 times the area of the slit portion of the recess portion. The above is better.
若為如此的雙面研磨裝置用載體,則由於載體母件的形成於支承孔內周的凸部的強度進一步提升,由於會成為更進一步減少了載體母件的支承孔周邊部分(嵌合部分)的扭曲的雙面研磨裝置用載體而為佳。In the case of the carrier for the double-side polishing apparatus, the strength of the convex portion formed on the inner circumference of the support hole of the carrier member is further increased, and the peripheral portion of the support hole of the carrier member is further reduced (the fitting portion) The twisted double-sided polishing apparatus is preferably a carrier.
若為本發明的雙面研磨裝置用載體,則能夠增強載體母件的形成於支承孔內周的嵌合部分的強度,而能夠減少載體母件的支承孔周邊的扭曲。並且,若使用如此的雙面研磨裝置用載體將晶圓雙面研磨,則藉由支承孔周邊的扭曲減少效果,能夠得到邊緣平坦度經提升,平坦度的分散被減少的晶圓。According to the carrier for the double-side polishing apparatus of the present invention, the strength of the fitting portion of the carrier member formed on the inner circumference of the support hole can be enhanced, and the distortion around the support hole of the carrier member can be reduced. Further, when the wafer is double-sidedly polished by the carrier using such a double-side polishing apparatus, the effect of reducing the distortion around the support hole can be obtained, and the wafer having improved edge flatness and reduced flatness dispersion can be obtained.
如同上述,習知追求有一種載體母件的支承孔周邊部分(嵌合部分)的扭曲較少的雙面研磨裝置用載體。As described above, it has been conventionally desired to have a carrier for a double-side polishing apparatus having a less twisted peripheral portion (fitting portion) of a support member of a carrier member.
並且,本案發明人為了解決上述問題反復精心研討的結果,發現藉由將載體母件的形成於支承孔的內周的凹凸部的凹部的間隔(即,鄰接的凹部的中心彼此的距離),自習知的5mm以上未滿10mm,擴張為10mm以上60mm以下,而能夠成為載體母件與插入件的嵌合部分的扭曲經減少的載體,而完成本發明。Further, as a result of intensive studies in order to solve the above problems, the inventors of the present invention found that the distance between the concave portions of the uneven portions formed on the inner circumference of the support hole by the carrier member (that is, the distance between the centers of the adjacent concave portions) is The present invention has been completed by the conventionally known 5 mm or more and less than 10 mm, and expanded to 10 mm or more and 60 mm or less, and can be a carrier having a reduced distortion of the fitting portion of the carrier mother member and the insert member.
即本發明提供一種雙面研磨裝置用載體,係配設於將晶圓雙面研磨的雙面研磨裝置中,包含形成有於研磨時用以支承晶圓的一支承孔的一載體母件、及沿著該支承孔的內周而配置且形成有與晶圓外周部相接觸的內周部的一插入件,其中,該載體母件為沿著該支承孔的內周週期性地形成有一凹凸部,該凹凸部中鄰接的凹部的中心彼此的距離在10mm以上60mm以下,於該載體母件的平面方向中該凹凸部中的凸部的面積較凹部的切口部分的面積為大,該插入件於外周部週期性地形成有一凹凸部而與形成於該支承孔的內周的該凹凸部得以嵌合,該載體母件的形成於該支承孔的內周的該凹凸部與該插入件的形成於外周部的該凹凸部嵌合。That is, the present invention provides a carrier for a double-side polishing apparatus, which is disposed in a double-side polishing apparatus for polishing a wafer on both sides, and includes a carrier member formed with a support hole for supporting the wafer during polishing, And an insert disposed along the inner circumference of the support hole and formed with an inner peripheral portion in contact with the outer peripheral portion of the wafer, wherein the carrier member is periodically formed along an inner circumference of the support hole In the uneven portion, the distance between the centers of the adjacent concave portions in the uneven portion is 10 mm or more and 60 mm or less, and the area of the convex portion in the uneven portion is larger than the area of the cut portion of the concave portion in the planar direction of the carrier member. The insert is periodically formed with a concavo-convex portion at the outer peripheral portion to be fitted to the concavo-convex portion formed on the inner circumference of the support hole, and the concavo-convex portion of the carrier member formed on the inner circumference of the support hole and the insertion portion The uneven portion formed on the outer peripheral portion of the member is fitted.
以下詳細說明關於本發明的雙面研磨裝置用載體。The carrier for the double-side polishing apparatus of the present invention will be described in detail below.
於圖1顯示本發明的雙面研磨裝置用載體之一例。本發明的雙面研磨裝置用載體1為配設於將晶圓雙面研磨的雙面研磨裝置中,具有形成有於研磨時用以支承晶圓的支承孔2的載體母件3、及沿著支承孔2的內周而配置且形成有與晶圓外周部相接觸的內周部的插入件4。Fig. 1 shows an example of a carrier for a double-side polishing apparatus of the present invention. The carrier 1 for a double-side polishing apparatus of the present invention is disposed in a double-side polishing apparatus for polishing a wafer on both sides, and has a carrier member 3 formed along a support hole 2 for supporting a wafer during polishing, and along The insert 4 is disposed on the inner circumference of the support hole 2 and is formed with an inner peripheral portion that is in contact with the outer peripheral portion of the wafer.
載體母件3為沿著支承孔2的內周週期性且連續性地形成,本發明中,此載體母件3的凹凸部5中鄰接的凹部5a的中心彼此的距離d在10mm以上60mm以下,於載體母件3的平面方向中該凹凸部5中的凸部5b的面積較凹部5a的切口部分的面積為大。The carrier member 3 is periodically and continuously formed along the inner circumference of the support hole 2. In the present invention, the distance d between the centers of the adjacent concave portions 5a of the uneven portion 5 of the carrier member 3 is 10 mm or more and 60 mm or less. The area of the convex portion 5b in the uneven portion 5 in the planar direction of the carrier member 3 is larger than the area of the slit portion of the concave portion 5a.
如此,使載體母件3的凹凸部5中鄰接的凹部5a的中心彼此的距離d為10mm以上60mm以下而較習知距離為廣,以成為載體母件3與插入件4的嵌合部分的扭曲經減少的雙面研磨裝置用載體1。In this manner, the distance d between the centers of the adjacent concave portions 5a of the uneven portion 5 of the carrier member 3 is 10 mm or more and 60 mm or less, and the distance is wider than the conventional one, so as to be a fitting portion of the carrier member 3 and the insert 4. The carrier 1 for the double-sided polishing apparatus with reduced distortion is twisted.
如圖2所示,習知的雙面研磨裝置用載體10為了使插入件40與載體母件30確實嵌合,載體母件30的凹凸部中鄰接的凹部50a的中心彼此的距離,雖隨著晶圓直徑而相異,但存在多數為5mm至10mm未滿(直徑300mm時約為9.6mm)的相對狹窄的間隔。但是,如此的狹窄間隔則會部分應力集中,如圖3所示,會於載體母件30的支承孔周邊產生扭曲。As shown in Fig. 2, in the conventional carrier 10 for a double-side polishing apparatus, in order to surely fit the insert 40 and the carrier member 30, the distance between the centers of the adjacent concave portions 50a in the uneven portion of the carrier member 30 is The wafer diameters are different, but there are relatively narrow intervals of mostly 5 mm to 10 mm (about 9.6 mm at 300 mm diameter). However, such a narrow interval causes partial stress concentration, as shown in FIG. 3, which causes distortion around the support hole of the carrier member 30.
本發明中,由於在載體母件3的平面方向的凹凸部5的凸部5b的面積較凹部5a的切口部分的面積為大,且於載體母件3的凹凸部5的鄰接的凹部5a的中心彼此的距離d擴張為10mm以上,藉此使凹凸部5的數量較習知為少,而能夠相對擴大載體母件側的凸部5b的面積。如此,藉由使其為嵌合部分的間隔為較寬,而能夠減少載體母件3的支承孔周邊的扭曲量。又由於d若超過60mm,則在晶圓加工中等有插入件4自載體母件3脫落的可能性,故本發明中d為60mm以下。又載體母件3的凹凸部5中鄰接的凹部5a的中心彼此的距離d以14mm以上50mm以下為佳,較佳為18mm以上30mm以下。In the present invention, the area of the convex portion 5b of the uneven portion 5 in the planar direction of the carrier member 3 is larger than the area of the slit portion of the concave portion 5a, and is adjacent to the concave portion 5a of the uneven portion 5 of the carrier member 3. The distance d between the centers is expanded to 10 mm or more, whereby the number of the uneven portions 5 is reduced as compared with the conventional one, and the area of the convex portions 5b on the carrier mother side can be relatively enlarged. Thus, by making the interval of the fitting portion wider, the amount of twist around the support hole of the carrier member 3 can be reduced. Further, if d exceeds 60 mm, there is a possibility that the insert 4 is detached from the carrier member 3 in wafer processing. Therefore, in the present invention, d is 60 mm or less. Further, the distance d between the centers of the adjacent concave portions 5a of the uneven portion 5 of the carrier member 3 is preferably 14 mm or more and 50 mm or less, and more preferably 18 mm or more and 30 mm or less.
在此,關於載體母件的形成於支承孔內周的凹凸部中鄰接的凹部的中心彼此的距離d的大小與載體母件的支承孔周邊部分(嵌合部分)的扭曲的關係,顯示如下。Here, the relationship between the magnitude of the distance d between the centers of the adjacent concave portions in the uneven portion formed on the inner circumference of the support hole of the carrier member and the distortion of the peripheral portion (fitting portion) of the support hole of the carrier member is as follows. .
關於用以研磨直徑300mm的矽晶圓的雙面研磨裝置用載體的載體母件的支承孔周邊的嵌合部分,將習知的鄰接的凹部的中心彼此的距離d(9.6mm)時的載體母件的扭曲量作為基準,藉由模擬分析(ANSYS mechanical製)將以距離d擴大為10倍(95.5mm)時的載體母件的扭曲量數值化。Regarding the fitting portion around the support hole of the carrier member for the carrier for the double-side polishing apparatus for polishing the 矽 wafer having a diameter of 300 mm, the carrier at the distance d (9.6 mm) from the center of the conventional adjacent concave portion The amount of twist of the carrier member was used as a reference, and the amount of distortion of the carrier member when the distance d was expanded to 10 times (95.5 mm) was numerically analyzed by a simulation analysis (manufactured by ANSYS Corporation).
將分別所分析出的凹凸部的切口部分的形狀為台形的狀況及為圓形的狀況的結果顯示於圖4(A)、圖4(B)。結果,不論在為台形的狀況下(圖4(A)),及為圓形的狀況下(圖4(B)),於載體母件的凹凸部鄰接的凹部中心彼此的距離d若未滿10mm,則與為10mm以上的狀況相比扭曲量(變形率)大幅增加。另一方面,若是鄰接的中心彼此的距離d為10mm以上,則鄰接的凹部的中心彼此的距離d越大扭曲就越減少。扭曲的減少,隨著間隔擴大將會逐漸達到飽和,切口部分的形狀為台形時則會在4倍距離(d=38.2mm)以上變得固定。The results of the shape of the notched portion of the uneven portion analyzed in a table shape and the state of being circular are shown in FIGS. 4(A) and 4(B). As a result, the distance d between the centers of the concave portions adjacent to the uneven portion of the carrier member is not full, in the case of a trapezoidal shape (Fig. 4(A)) and in the case of a circular shape (Fig. 4(B)). When the thickness is 10 mm, the amount of distortion (deformation rate) is greatly increased as compared with the case of 10 mm or more. On the other hand, if the distance d between the adjacent centers is 10 mm or more, the larger the distance d between the centers of the adjacent concave portions, the smaller the distortion is. The reduction in distortion will gradually become saturated as the interval is enlarged, and the shape of the slit portion will be fixed at a distance of 4 times (d=38.2 mm) or more.
凹部的切口部分的形狀為台形時,當以習知的鄰接的凹部的中心彼此的距離(d=9.6mm)的變形率為基準時,於4倍距離(d=38.2mm)時的扭曲量減少11%。凹部的切口部分為圓形時同樣在4倍距離以上變得固定,以習知間隔的變形率為基準時的扭曲量減少6.5%。When the shape of the slit portion of the concave portion is a trapezoidal shape, the amount of twist at a distance of 4 times (d = 38.2 mm) when the deformation ratio of the distance between the centers of the conventional adjacent concave portions (d = 9.6 mm) is used as a reference Reduced by 11%. When the notched portion of the concave portion is circular, it is also fixed at a distance of four times or more, and the amount of distortion at the time of the conventional deformation rate is reduced by 6.5%.
又於本發明的雙面研磨裝置用載體1中,以載體母件3的形成於支承孔的內周的凹部5a的切口部分的形狀為三角形、長方形、梯形、楔形、鑰匙孔形、U形、及圓形中任一種為佳。並且,於此些的任一種形狀中,模擬分析的結果,發現了與上述相同的傾向。Further, in the carrier 1 for a double-side polishing apparatus according to the present invention, the shape of the slit portion of the recess 5a formed in the inner periphery of the support hole of the carrier member 3 is triangular, rectangular, trapezoidal, wedge-shaped, keyhole-shaped, or U-shaped. Any one of the round and the round is preferred. Further, in any of these shapes, as a result of the simulation analysis, the same tendency as described above was found.
又以形成於載體母件3的支承孔2的內周的凹凸部5,於該載體母件3的平面方向中該凸部5b的面積為凹部5a的切口部分的面積的4倍以上為佳。若為如此的雙面研磨裝置用載體1,則由於凸部5b的強度更加提升,能夠為更進一步減少載體母件3的支承孔周邊部分(嵌合部分)的扭曲之物。Further, in the uneven portion 5 formed on the inner periphery of the support hole 2 of the carrier member 3, the area of the convex portion 5b in the planar direction of the carrier member 3 is preferably 4 times or more the area of the slit portion of the concave portion 5a. . In the case of the carrier 1 for a double-side polishing apparatus, the strength of the convex portion 5b is further improved, and the distortion of the peripheral portion (fitting portion) of the support hole of the carrier member 3 can be further reduced.
如圖1所示,插入件4為由能夠與載體母件3的形成於支承孔2的內周的凹凸部5嵌合的凹部6a及凸部6b所構成的凹凸部6於外周部週期性的形成之物。作為插入件4的材質,能夠為例如硬質樹脂。As shown in Fig. 1, the insert 4 is periodically formed on the outer peripheral portion by a concave portion 6a and a convex portion 6b which are engageable with the concave-convex portion 5 formed on the inner periphery of the support hole 2 of the carrier member 3. The formation of things. The material of the insert 4 can be, for example, a hard resin.
本發明的雙面研磨裝置用載體1為如此的載體母件3的形成於支承孔2的內周的凹凸部5與形成於插入件4的外周部的凹凸部6經嵌合之物。The carrier 1 for a double-side polishing apparatus of the present invention is such that the uneven portion 5 formed on the inner periphery of the support hole 2 of the carrier member 3 and the uneven portion 6 formed on the outer peripheral portion of the insert 4 are fitted.
如此的本發明的雙面研磨裝置用載體1,於載體母件3的支承孔周邊部分(嵌合部分)的扭曲變少,若使用如此的雙面研磨裝置用載體1將晶圓雙面研磨,則藉由支承孔周邊的扭曲減少效果,能夠得到的邊緣平坦度提升,而平坦度的參差減少的被加工的晶圓。 〔實施例〕In the carrier 1 for a double-side polishing apparatus of the present invention, the distortion of the peripheral portion (fitting portion) of the support hole of the carrier member 3 is reduced, and if the carrier 1 for such a double-side polishing device is used, the wafer is double-sidedly ground. By the effect of reducing the distortion around the support hole, the obtained flatness of the edge is improved, and the wafer having the unevenness of the flatness is reduced. [Examples]
以下雖顯示實施例及比較例而詳細說明本發明,但本發明並非限定於此。Hereinafter, the present invention will be described in detail by showing examples and comparative examples, but the present invention is not limited thereto.
(比較例1) 作為雙面研磨裝置用載體,將載體母件30的形成於支承孔內周的凹凸部的凹部50a的切口部分的形狀為台形,鄰接的凹部50a中心彼此的距離d為9.6mm的載體母件30,與插入件40嵌合,製造如圖2所示的雙面研磨裝置用載體10。(Comparative Example 1) As a carrier for the double-side polishing apparatus, the shape of the slit portion of the concave portion 50a of the uneven portion formed on the inner circumference of the support hole of the carrier member 30 is a trapezoidal shape, and the distance d between the centers of the adjacent concave portions 50a is 9.6. The carrier member 30 of mm is fitted into the insert 40 to produce a carrier 10 for a double-side polishing apparatus as shown in FIG.
(實施例1) 作為雙面研磨裝置用載體,將載體母件3的形成於支承孔內周的凹凸部5的凹部5a的切口部分的形狀為台形,鄰接的凹部5a中心彼此的距離d為19.1mm,平面方向的凹凸部5中凸部5b的面積較凹部5a的切口部分的面積為大的載體母件3,與插入件4嵌合,製造如圖1所示的雙面研磨裝置用載體1。實施例1的d(19.1mm),為比較例1的d(9.6mm)的約2倍。(Example 1) As a carrier for a double-side polishing apparatus, the shape of the notch portion of the concave portion 5a of the uneven portion 5 formed on the inner circumference of the support hole of the carrier member 3 is a table shape, and the distance d between the centers of the adjacent concave portions 5a is 19.1 mm, the carrier member 3 having a larger area of the convex portion 5b in the uneven portion 5 in the planar direction than the slit portion of the concave portion 5a is fitted to the insert 4 to produce a double-side polishing apparatus as shown in FIG. Carrier 1. d (19.1 mm) of Example 1 was about twice as large as d (9.6 mm) of Comparative Example 1.
關於上述實施例1及比較例1的雙面研磨裝置用載體,將圖5所示的範圍(載體母件的支承孔周邊)的扭曲藉由三次元測定機(東京精密公司製)確認。測定結果顯示於圖6(A)。扭曲量的平均值於實施例1中為24.2μm,於比較例1中為29.1μm。確認到實施例與比較例相比支承孔周圍的扭曲大幅減少。另外此些結果,與圖4(A)所示的模擬結果幾乎一致。In the carrier for the double-side polishing apparatus of the first embodiment and the comparative example 1, the distortion in the range shown in FIG. 5 (the periphery of the support hole of the carrier member) was confirmed by a three-dimensional measuring machine (manufactured by Tokyo Seimitsu Co., Ltd.). The measurement results are shown in Fig. 6(A). The average value of the amount of distortion was 24.2 μm in Example 1, and 29.1 μm in Comparative Example 1. It was confirmed that the distortion around the support hole was significantly reduced as compared with the comparative example. Further, these results are almost identical to the simulation results shown in Fig. 4(A).
進一步,使用此些載體,對直徑300mm的矽晶圓進行雙面研磨(Double Side Polishing, DSP)加工,進行平坦度的測定(LSW-3000, 神戶製鋼所製)。將以比較例1為基準時的ESFQRrange相對值的結果顯示於圖6(B),及ESFQRmax的相對值的結果顯示於圖6(C)。於實施例1,確認到與比較例1相比,ESFQR的range幅度縮小,邊緣平坦度的參差減少。又同時能夠使ESFQRmax的值改善。Further, using these carriers, a 300 mm-diameter silicon wafer was subjected to double side polishing (DSP) processing to measure flatness (LSW-3000, manufactured by Kobe Steel Co., Ltd.). The result of the relative value of ESFQRrange when the comparison example 1 is used is shown in FIG. 6(B), and the result of the relative value of ESFQRmax is shown in FIG. 6(C). In Example 1, it was confirmed that the range width of the ESFQR was smaller than that of Comparative Example 1, and the variation of the edge flatness was reduced. At the same time, the value of ESFQRmax can be improved.
(比較例2至4) 將以比較例1的雙面研磨裝置用載體為基準時,載體母件的支承孔周邊的扭曲量相異的雙面研磨裝置用載體(比較例2至4)的支承孔周邊的扭曲量(倍率)及平坦度的惡化量(nm)間的關係顯示於表1及圖7。結果確認到扭曲量越少,平坦度越良好。(Comparative Examples 2 to 4) When the carrier for the double-side polishing apparatus of Comparative Example 1 is used as a reference, the carrier for the double-side polishing apparatus having different amounts of twist around the support hole of the carrier member (Comparative Examples 2 to 4) The relationship between the amount of twist (magnification) around the support hole and the amount of deterioration of the flatness (nm) is shown in Table 1 and FIG. As a result, it was confirmed that the smaller the amount of distortion, the better the flatness.
【表1】
(比較例5) 與比較例1相同,作為雙面研磨裝置用載體,使載體母件30的形成於支承孔內周的凹凸部的凹部50a的切口部分的形狀為台形,鄰接的凹部50a的中心彼此的距離d為62mm的載體母件30,與插入件40嵌合,而製造如圖2所示的雙面研磨裝置用載體10。(Comparative Example 5) As in the case of the double-side polishing apparatus, the shape of the slit portion of the concave portion 50a of the concave-convex portion formed on the inner circumference of the support hole of the carrier member 30 is a table shape, and the adjacent concave portion 50a is formed. The carrier member 30 having a center distance d of 62 mm is fitted to the insert 40 to manufacture the carrier 10 for a double-side polishing apparatus as shown in FIG.
使用所製造的載體,對直徑300mm的矽晶圓進行DSP加工,但途中插入件40自載體脫落,而無法進行DSP加工。Using the manufactured carrier, DSP processing was performed on a silicon wafer having a diameter of 300 mm, but the insert 40 was detached from the carrier while the DSP was not processed.
藉由以上,若是載體母件的形成於支承孔內周的鄰接的凹部的中心彼此的距離d未滿10mm,則支承孔周邊的扭曲量大幅增加(比較例1),d若是超過60mm,則於晶圓加工中插入件脫落(比較例5)。另一方面,使d為10mm以上60mm以下的載體,變得於母件的支承周邊部分(嵌合部分)的扭曲較少(實施例1)。又d為60mm時,即使進行晶圓的DSP加工,插入件亦不會脫落。As described above, if the distance d between the centers of the adjacent concave portions formed on the inner circumference of the support hole of the carrier member is less than 10 mm, the amount of twist around the support hole is greatly increased (Comparative Example 1), and if d is more than 60 mm, The insert was peeled off during wafer processing (Comparative Example 5). On the other hand, the carrier having a d of 10 mm or more and 60 mm or less has less distortion in the peripheral portion (fitting portion) of the support member (Example 1). When d is 60 mm, the insert does not fall off even if the wafer is processed by the DSP.
另外,本發明並不為前述實施例所限制。前述實施例為例示,具有與本發明的申請專利範圍所記載的技術思想為實質相同的構成,且達成同樣作用效果者,皆包含於本發明的技術範圍。Further, the present invention is not limited by the foregoing embodiments. The above-described embodiments are exemplified, and have substantially the same configuration as the technical idea described in the patent application scope of the present invention, and the same effects are achieved in the technical scope of the present invention.
1、10‧‧‧研磨裝置用載體1, 10‧‧‧ Carrier for grinding device
2‧‧‧支承孔2‧‧‧Support hole
3、30‧‧‧載體母件3, 30‧‧‧ carrier mother
4、40‧‧‧插入件4, 40‧‧‧ inserts
5、6‧‧‧凹凸部5, 6‧‧‧
5a、6a、50a‧‧‧凹部5a, 6a, 50a‧‧‧ recess
5b、6b‧‧‧凸部5b, 6b‧‧‧ convex
d‧‧‧距離D‧‧‧distance
圖1係顯示本發明的雙面研磨裝置用載體之一例的概略圖。 圖2係顯示習知的雙面研磨裝置用載體之一例的概略圖。 圖3係說明習知的雙面研磨裝置用載體中所產生的扭曲的說明圖。 圖4係顯示載體母件的支承孔周邊的變形率與載體母件的凹凸部中鄰接的凹部的中心彼此的距離d之間的關係的量表圖。 圖5係說明於實施例1及比較例1中扭曲經測定的部分的說明圖。 圖6係於實施例1及比較例1中經測定的支承孔周邊的扭曲量(圖6(A))、ESFQRrange相對值(圖6(B))、ESFQRmax的相對值(圖6(C))的測定結果。 圖7係顯示比較例2至4中,載體母件的支承孔周邊的扭曲與平坦度(nm)之間的關係的示意圖。Fig. 1 is a schematic view showing an example of a carrier for a double-side polishing apparatus of the present invention. Fig. 2 is a schematic view showing an example of a carrier for a conventional double-side polishing apparatus. Fig. 3 is an explanatory view for explaining distortion generated in a carrier for a conventional double-side polishing apparatus. Fig. 4 is a graph showing the relationship between the deformation ratio of the periphery of the support hole of the carrier member and the distance d between the centers of the adjacent concave portions in the uneven portion of the carrier member. Fig. 5 is an explanatory view for explaining a portion in which the distortion is measured in Example 1 and Comparative Example 1. Fig. 6 is a graph showing the amount of twist around the support hole measured in Example 1 and Comparative Example 1 (Fig. 6(A)), relative value of ESFQRrange (Fig. 6(B)), and relative value of ESFQRmax (Fig. 6(C) The measurement result. Fig. 7 is a view showing the relationship between the distortion and the flatness (nm) of the periphery of the support hole of the carrier member in Comparative Examples 2 to 4.
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| JP2017041740 | 2017-03-06 | ||
| JPJP2017-041740 | 2017-03-06 | ||
| JP2017156908A JP6840639B2 (en) | 2017-03-06 | 2017-08-15 | Carrier for double-sided polishing machine |
| JPJP2017-156908 | 2017-08-15 |
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| TW201832868A true TW201832868A (en) | 2018-09-16 |
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| TWI877330B (en) * | 2020-05-19 | 2025-03-21 | 日商信越半導體股份有限公司 | Manufacturing method of carrier for double-side polishing device and double-side polishing method of wafer |
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| JP7356709B2 (en) | 2019-05-27 | 2023-10-05 | スピードファム株式会社 | Work carrier and work carrier manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH10329013A (en) * | 1997-05-30 | 1998-12-15 | Shin Etsu Handotai Co Ltd | Carrier for double polishing and double lapping |
| JP3439726B2 (en) * | 2000-07-10 | 2003-08-25 | 住友ベークライト株式会社 | Material to be polished and method of manufacturing the same |
| JP2004122346A (en) * | 2002-10-07 | 2004-04-22 | Daiden Co Ltd | Carrier plate for polishing |
| JP5114113B2 (en) * | 2007-07-02 | 2013-01-09 | スピードファム株式会社 | Work carrier |
| JP5452984B2 (en) * | 2009-06-03 | 2014-03-26 | 不二越機械工業株式会社 | Wafer double-side polishing method |
| KR101209271B1 (en) * | 2009-08-21 | 2012-12-06 | 주식회사 엘지실트론 | Apparatus for double side polishing and Carrier for double side polishing apparatus |
| JP4605564B1 (en) * | 2009-09-28 | 2011-01-05 | 株式会社白崎製作所 | Holder for brittle thin plate polishing apparatus and method for manufacturing the same |
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| TWI877330B (en) * | 2020-05-19 | 2025-03-21 | 日商信越半導體股份有限公司 | Manufacturing method of carrier for double-side polishing device and double-side polishing method of wafer |
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