TW201830515A - Production method for glass substrate - Google Patents

Abstract

The processing gas supplied from the processor (5) disposed on the transport path while transporting the glass substrate (2) carried into the chamber (8) from the loading port (8aa) in a flat position along the transport path ( 4) A method of manufacturing a glass substrate obtained by performing an etching treatment on the lower surface (2a) and removing the treated glass substrate (2) from the outlet (8ab) toward the chamber (8), from the chamber ( 8) The suction port (12a) disposed on the upper side of the transport path is exhausted toward the outside of the chamber (8).

Description

Method for manufacturing glass substrate

[0001] The present invention relates to a method for producing a glass substrate comprising a process of performing etching treatment on a lower surface of a glass substrate by using a processing gas such as hydrogen fluoride while conveying the glass substrate in a flat position.

[0002] In a known manner, the glass substrate can be used in a flat panel display represented by a liquid crystal display, a plasma display, an organic electroluminescence display, a field emission display, or the like, or a mobile terminal such as a smart phone or a tablet computer. A wide variety of electronic devices. [0003] In the manufacturing process of the glass substrate, there is a problem that occurs due to static electricity. For example, when placed on a support table to which a predetermined treatment should be performed on a glass substrate, there is a case where the glass substrate is adhered to the support table due to static electricity. In such a case, when the glass substrate which has been processed is lifted from the support table, the glass substrate may be damaged. [0004] Then, as a countermeasure against such a problem, it is known that the surface of the glass substrate is etched by a processing gas such as hydrogen fluoride before the specified treatment, and the surface is roughened to avoid the problem of static electricity. The method of occurrence. Then, Patent Document 1 discloses an example of a method for performing an etching treatment on the surface of a glass substrate. [0005] The method disclosed in the same document is a processing method in which a glass substrate is conveyed in a flat position, and a processing gas supplied from a processor (a surface treatment device in the same literature) disposed on a transport path thereof is used. The lower surface of the upper and lower surfaces is subjected to an etching treatment. Further, although not disclosed in the same document, in the case where the etching treatment is performed, in order to prevent the processing gas from leaking to the outside, it is usually carried out in a state where the processor is surrounded by the chamber. In the chamber, an inlet for inserting the glass substrate before the etching process into the chamber and an outlet for carrying out the etching of the glass substrate to the outside of the chamber are formed. [Prior Art Document] [Patent Document] [0007] [Patent Document 1] JP-A-2014-125414

[Problems to be Solved by the Invention] However, in the case where the above method is employed, the following problems to be solved occur. That is, when the etching process is performed, the processing gas reacts with the glass substrate to generate a minute product. This product may cause a foreign matter to be formed on the upper surface of the glass substrate to adhere to the airflow generated in the chamber and float. Here, in the case where the upper surface of the etching target is not subjected to the process of patterning the transparent conductive film or the like in the downstream process, the process is performed in a state where the foreign matter adheres to the upper surface, which causes a pattern defect. As described above, when the above method is employed, there is a problem that the quality of the glass substrate is lowered due to the adhesion of the foreign matter to the upper surface. In the present invention, the glass substrate is conveyed in a flat position, and when the lower surface of the glass substrate is etched by the processing gas, it is a technical problem to prevent deterioration of the quality of the glass substrate. [Means for Solving the Problem] The present invention has been made in order to solve the above problems, and the glass substrate that has been carried into the chamber from the loading port is transported along the transport path in a flat position, and is disposed on the transport path. The method for manufacturing a glass substrate in which the processing gas supplied from the processor is etched on the lower surface and then the processed glass substrate is carried out from the outlet to the outside of the chamber is characterized in that it is more inferior to the transport path in the chamber. The suction port disposed on the upper side is exhausted toward the outside of the chamber. [0012] In this method, the suction port is disposed outside the chamber from a suction port disposed above the transfer path in the chamber. Therefore, it is possible to form a product which is formed by the reaction between the processing gas and the glass substrate and which has foreign matter formed on the upper surface of the glass substrate and adheres to the inside of the chamber with the exhaust gas outside the chamber through the suction port. As a result, adhesion of foreign matter on the upper surface of the glass substrate can be avoided, and deterioration in quality of the glass substrate can be prevented. [0013] In the above method, it is preferable that the glass substrate is discharged to the outside of the chamber from the suction port on the downstream side of the processing direction of the glass substrate. [0014] In this method, the etching process is performed while the glass substrate is being conveyed, and the product is likely to move to the downstream side in the conveyance direction of the glass substrate after the formation. Therefore, it is advantageous to efficiently remove the product from the chamber when it is formed on the downstream side of the glass substrate in the transport direction of the glass substrate and from the suction port to the outside of the chamber. [0015] In the above method, it is preferable that the processor uses an upper structure and a lower structure that are opposed to each other with the transport path interposed therebetween, and the lower structure includes a pair of processes formed between the two components. a processor for supplying a gas supply port of the processing gas, and disposing the first dummy processor between the processor and the carry-out port on the transport path, the first dummy processor having a lower side of the transport path connected to the outside of the cavity The exhaust port has the same outer shape as the processor as viewed in the direction along the transport direction. [0016] In this way, by disposing the first dummy processor between the processor on the transport path and the carry-out port, even if airflow occurs from the carry-out port into the chamber even if the air pressure difference is caused by the inside and outside of the chamber It can also avoid the airflow reaching the processor. In other words, the first dummy processor having the same outer shape as the processor as viewed in the direction of the transport direction can achieve a windproof wall effect on the airflow. Therefore, it is possible to appropriately remove the pressure of the inflowing airflow, and to scrape the processing gas in the processing space of the processor, which causes a problem of hindering the implementation of the etching process. In addition, since the first dummy processor has an exhaust port that communicates with the outside of the chamber through the lower side of the transport path, the glass substrate can be transported, and the lower surface of the substrate can be dragged from the processing space to the downstream side in the transport direction (the first dummy processor) The processing gas flowing out from a dummy processor side is discharged to the outside of the chamber through the exhaust port. Thereby, it is possible to prevent the process gas flowing out of the processing space from leaking out of the chamber from the outlet. [0017] In the above method, it is preferable that the glass substrate is discharged to the outside of the chamber from the suction port on the downstream side of the first dummy processor in the transport direction of the glass substrate. [0018] As described above, the product is likely to move to the downstream side in the transport direction of the glass substrate after the formation. Therefore, if it is made to exhaust the inside of the chamber as much as possible in the transfer direction in the chamber, the product can be efficiently removed from the chamber. Therefore, if it is possible to exhaust the chamber from the suction port to the outside of the chamber in the direction in which the glass substrate is transported, it is more advantageous to remove the product from the chamber. [0019] In the above method, preferably, the second dummy processor is disposed between the processor on the transport path and the carry-in port, and the second dummy processor has an exhaust port that is communicated to the outside of the chamber by a lower side of the transport path. And having the same outer shape as the processor as viewed in the direction along the transport direction. [0020] In this way, by arranging the second dummy processor between the processor and the docking station, the airflow flowing from the docking port can be avoided from reaching the processor. In other words, the second dummy processor can be made to achieve a windshield effect on the airflow. Thereby, it is possible to appropriately remove the pressure of the airflow, and to scrape the processing gas in the processing space, thereby causing a concern that the etching process is hindered. Furthermore, since the second dummy processor has an exhaust port that communicates from the lower side of the transport path to the outside of the chamber, the above-mentioned doubts can be more effectively removed. That is, with respect to the airflow flowing from the lower surface of the glass substrate toward the processor side in the airflow flowing from the inlet, this can be discharged to the outside of the chamber through the exhaust port before reaching the processor. Therefore, the above doubts can be removed more effectively. [Effects of the Invention] According to the present invention, it is possible to prevent deterioration of the quality of the glass substrate when the glass substrate is conveyed in a flat position and the lower surface of the glass substrate is etched by the processing gas.

[0023] Hereinafter, a method of manufacturing a glass substrate according to an embodiment of the present invention will be described with reference to the drawings. First, a manufacturing apparatus of a glass substrate used in a method of manufacturing a glass substrate will be described. [0024] Here, in the following description, the transport direction of the glass substrate (the direction from the right to the left in FIG. 1) is referred to as the "transport direction". In addition, the width direction of the glass substrate orthogonal to the conveyance direction (the direction perpendicular to the paper surface in FIG. 1) is referred to as "width direction", and the length along the "width direction" is marked as "full width" or " Width size". Further, the direction perpendicular to the upper and lower surfaces of the glass substrate is referred to as "up and down direction". [0025] As shown in Fig. 1, the glass substrate manufacturing apparatus 1 is provided as a main component: a transporting means 3 for horizontally transporting the glass substrate 2 in a flat position, and a glass substrate 2 for transporting in the opposite direction. The lower surface 2a is subjected to a processing processor 5 for etching treatment using a processing gas 4 (in the present embodiment, hydrogen fluoride), and a flushing gas injection nozzle 7 for preventing the flushing gas 6 for etching the upper surface 2b of the glass substrate 2 is sprayed. The chamber 8 having the glass substrate 2, the inlet 8aa and the outlet 8ab, and the chamber 8 for preventing the processing gas 4 from leaking out from the space 9 formed in the interior of the glass substrate 2 are disposed on the transport path of the glass substrate 2 a first dummy processor 10 between the processor 5 and the carry-out port 8ab, and a second dummy processor 11 disposed between the processor 5 and the carry-in port 8aa, and the underside of the processing gas 4 and the glass substrate 2 The product generated by the reaction of the surface 2a is sucked and discharged to the outside of the chamber 8 by the suction nozzle 12. The conveying means 3 is composed of a plurality of rollers 3a arranged on the conveying path of the glass substrate 2. The glass substrate 2 can be conveyed along the transport path extending in a straight line by the plurality of rollers 3a. The entire width of the lower surface 2a of the glass substrate 2 is exposed between the rollers 3a adjacent to each other in the conveyance direction. By the reaction of the exposed lower surface 2a with the processing gas 4, etching treatment is performed and the entire width of the lower surface 2a is roughened. Moreover, as the conveying means 3, a thing other than the plurality of rolls 3a may be used, and other things may be used as long as the entire surface of the lower surface 2a of the glass substrate 2 can be exposed during conveyance. [0027] The processor 5 includes a main body portion 5a that is a lower structure of the glass substrate 2, and a top portion 5b that is an upper structure, and a top plate portion 5b that serves as a top plate portion 5b. The H steel 5c for reinforcing the member caused by the self-weight. A processing space 13 for performing etching processing on the glass substrate 2 passing therethrough is formed between the main body portion 5a and the top plate portion 5b. This processing space 13 is formed into a flat space. The width dimension W1 (see FIG. 2) of the processing space 13 and the thickness dimension T1 along the vertical direction are larger than the full width W2 (see FIG. 2) of the glass substrate 2 and the thickness T2 of the glass substrate 2, respectively. [0028] Here, when the glass substrate 2 enters the inside from the outside of the processing space 13, in order to prevent gas such as air existing around the glass substrate 2 from flowing into the processing space 13, the processing space along the conveying direction is caused. The length dimension L1 of 13 is preferably in the range of 300 mm to 2000 mm, and more preferably in the range of 600 mm to 1000 mm. Further, from the viewpoint of appropriately ejecting the flushing gas 6, the above-described length dimension L1 is preferably different from the length of the glass substrate 2 in the conveying direction, unlike the embodiment. Further, the thickness T1 of the processing space 13 is preferably in the range of 4 mm to 30 mm. Further, the value of the ratio of the length dimension L1 to the thickness dimension T1 (length dimension L1/thickness dimension T1) is preferably set in the range of 10 to 250. [0029] The body portion 5a has a rectangular parallelepiped shape. The main body portion 5a is provided with an air supply port 14 for injecting and supplying the processing gas 4 into the processing space 13, and an exhaust port 15 for sucking and exhausting the processing gas 4 from the processing space 13, and heating is used Heating means (not shown) such as the processing gas 4 supplied to the processing space 13 and a heater for preventing condensation due to the processing gas 4 are omitted. The exhaust ports 15 are respectively disposed at the upstream end and the downstream end of the main body portion 5a in the transport direction. On the other hand, the air supply port 14 is disposed in plurality along the transport direction between the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end (three in the present embodiment). . [0030] The flow rate of the processing gas 4 supplied to the processing space 13 in the air supply port 14 on the most downstream side in the conveying direction of the plurality of air supply ports 14 is the largest, and in the present embodiment, compared with the other The gas supply port 14 supplies a process gas 4 having a double flow rate. On the other hand, the concentration of the supplied processing gas 4 is the same between the plurality of gas supply ports 14. Each of the air supply ports 14 is connected to the processing space 13 between the rollers 3a adjacent to each other in the transport direction. Further, the flow rate of the processing gas 4 supplied to each of the gas supply ports 14 is constant per unit time. Here, the distance L2 from the most upstream side air supply port 14 to the center air supply port 14 and the air supply port 14 from the center air supply port 14 to the most downstream side are provided in the conveyance direction. The distance L3 is equal. Moreover, in the present embodiment, the air supply ports 14 are arranged three, but not limited thereto, and two or more may be arranged. The exhaust port 15 at each upstream end portion and the exhaust port 15 at the downstream end portion can feed the process gas 4 sucked from the processing space 13 into the space 16 formed inside the main body portion 5a. The space 16 is connected to an exhaust pipe 17 that is connected to a washing dust collecting device (not shown) disposed outside the chamber 8. Thereby, the process gas 4 sent into the space 16 from the process air 13 through the exhaust port 15 is exhausted from the space 16 toward the washing dust collecting device through the exhaust pipe 17. Further, the exhaust pipe 17 is connected to the downstream end portion in the conveying direction of the space 16. The exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end may be provided with a mechanism to individually adjust the exhaust gas ("gas"), not only the process gas 4 but also from the processing space. The flow rate of air, etc., which is sucked into the exhaust port 15 after being pulled into the interior. On the other hand, the opening of the exhaust port 15 that is continuous with the processing space 13 may be closed, or the portion that constitutes the exhaust port 15 may be detached from the main body portion 5a, and the hole that communicates with the space 16 may be closed. The exhaust port 15 is omitted. [0032] Here, the flow rate of the gas exhausted from the processing space 13 by the respective exhaust ports 15 is relatively large compared to the flow rate of the processing gas 4 supplied to the processing space 13 by the respective air supply ports 14. Further, the gas flow rate at which each of the exhaust ports 15 is exhausted is constant per unit time. Further, the distance along the transport direction is larger than the mutual distance D1 between the exhaust port 15 on the upstream side end portion and the most upstream side air supply port 14, and the exhaust port 15 on the downstream side end portion and the most downstream side. The distance D2 between the air supply ports 14 is long. The length of the distance D2 between each other is preferably 1.2 times or more the length of the distance D1 from each other, more preferably 1.5 times or more, and most preferably 2 times or more. [0033] As shown in FIG. 2, both the air supply port 14 and the exhaust port 15 are formed in a slit shape elongated in the width direction. The width of the air supply port 14 can be made slightly shorter than the full width of the glass substrate 2 as shown in the figure, or can be made slightly longer than the full width of the glass substrate 2, unlike the same figure. On the other hand, the width of the exhaust port 15 is made slightly longer than the full width of the glass substrate 2. Here, in order to facilitate the equal supply of the processing gas 4 in the width direction, the opening length S1 of the gas supply port 14 along the conveying direction is preferably in the range of 0.5 mm to 5 mm. Further, the length of the opening of the exhaust port 15 along the transport direction is longer than the opening length S1 of the air supply port 14 in the transport direction. In addition, in order to avoid the implementation of the etching process which hinders the smoothness of the gas suction by the exhaust port 15, the distance L4 from the upstream side edge 5aa of the main body portion 5a to the exhaust port 15 at the upstream end portion and the distance The distance L4 from the downstream side edge 5ab to the exhaust port 15 at the downstream end is preferably in the range of 1 mm to 20 mm. [0034] As shown in FIG. 1, the top portion of the main body portion 5a facing the lower surface 2a of the glass substrate 2 through which the processing space 13 passes is a plurality of units arranged side by side along the transport direction without a gap (in this embodiment). The configuration is eight, and includes a gas supply unit 18 and a connection unit 19) which will be described later. The plurality of units constitute the top of the body portion 5a and constitute the top of the chamber of the space 16 described above. [0035] Among the plurality of units, the air supply unit 18 forming the air supply port 14 and the connection unit 19 not forming the air supply port 14 (in FIG. 2, the air supply unit 18 and the connection unit are respectively surrounded by thick lines) 19). In the present embodiment, a plurality of units are arranged side by side, and the air supply unit 18 is arranged side by side at the second, fourth, and sixth positions from the upstream side in the transport direction. On the other hand, the connecting unit 19 is arranged side by side in the first, third, fifth, seventh, and eighth positions from the upstream side in the conveying direction. The air supply unit 18 includes an air supply nozzle 18a that is coupled to the air supply port 14 and that is connected to a generator (not shown) of the processing gas 4 disposed outside the chamber 8. The connecting unit 19 connects the adjacent air supply units 18 to each other and between the air supply unit 18 and the exhaust port 15. [0036] Here, the connection unit 19 (19x) at the first position (the position on the most upstream side) from the upstream side in the conveyance direction is disposed and fixed at this position. On the other hand, the connection unit 19 at the third, fifth, seventh, and eighth positions from the upstream side may be replaced with the air supply unit 18 or replaced by the air supply port 14 to be formed. The exhaust unit 20 of the exhaust port 20a (to be described later, the exhaust unit 20 is not used). Further, the air supply unit 18 at the second, fourth, and sixth positions from the upstream side may be replaced with the connection unit 19 or the exhaust unit 20 to be described later. Thereby, the number of the air supply ports 14 or the position of the air supply port 14 in the transport direction can be changed. Further, in the case where the exhaust unit 20 is disposed, the processing gas 4 may be exhausted from the other of the exhaust ports 15 and 15 at the upstream end and the downstream end. Hereinafter, the replacement of these units will be described with reference to Figs. 3a to 3d. [0037] In each of FIGS. 3a to 3c, the air supply unit 18, the connection unit 19, and the exhaust unit 20 are surrounded by thick lines, and are formed to be equal to each other along the length in the transport direction. Therefore, when replacing the cells, the cells newly arranged with the replacement can be connected to the two cells adjacent thereto (in the respective figures of FIGS. 3a to 3c, the two cells adjacent to each other are the connection cells 19). The occasion) side by side without gaps. Furthermore, the newly arranged unit can be arranged side by side without any step in the up and down direction of the adjacent two units. [0038] Here, as shown in FIG. 3a, the peripheral region 14a of the air supply port 14 of the air supply unit 18 is positioned at a high position in the vertical direction compared to other fields. Thereby, the peripheral area 14a of the air supply port 14 can be made shorter than the distance from the lower surface 2a of the glass substrate 2 in the processing space 13 compared to other fields. In the present embodiment, the distance between the peripheral region 14a of the air supply port 14 and the lower surface 2a of the glass substrate 2 is half the distance from the distance from the lower surface 2a of the glass substrate 2 in other fields. Then, in the portion where the distance between the distances is shortened, the tip end of the air supply port 14 (the outflow port of the processing gas 4) is brought close to the lower surface 2a of the glass substrate 2. Further, as shown in FIG. 3c, when the exhaust unit 20 is disposed, the exhaust port 20a in which the exhaust unit 20 is formed is in communication with the space 16 described above. Thereby, the process gas 4 sent into the space 16 from the process air 13 through the exhaust port 20a is exhausted from the space 16 toward the washing dust collector through the exhaust pipe 17. Further, the exhaust port 20a is formed in a slit shape elongated in the width direction, similarly to the exhaust port 15 at the upstream end and the exhaust port 15 at the downstream end. Here, as shown in FIG. 3d, the height of the peripheral region 14a of the air supply port 14 of the air supply unit 18 may be made the same as in other fields. As shown in FIG. 1, the top plate portion 5b is composed of a single plate body (a plate body having a rectangular shape in plan view), and has a flat surface opposite to the upper surface 2b of the glass substrate 2 through which the processing space 13 passes. . Further, the top plate portion 5b contains a heating means (not shown) for preventing condensation due to the processing gas 4 (not shown). The H steel 5c is extended in the width direction on the top plate portion 5b. Further, a plurality of H steels 5c are provided (three in the present embodiment), and the plurality of H steels 5c are arranged at equal intervals in the transport direction. [0040] The flushing gas injection nozzle 7 is disposed on the upstream side of the processor 5 in the transport direction, and is located above the transport path of the glass substrate 2. The flushing gas injection nozzle 7 can be formed in the gap 13a formed between the portion of the glass substrate 2 that enters the processing space 13 and the top plate portion 5b so as to flow in the conveying direction and downstream in the conveying direction. The flushing gas 6 is sprayed sideways. The flow of the flushing gas 6 can form a full width across the gap 13a. Further, the flushing gas 6 is relatively faster than the flow rate of the glass substrate 2 formed by the transport means 3 in the transport direction. As a result, the process gas 4 to be introduced into the gap 13a and the pressure of the flushing gas 6 are brought to the downstream side in the transport direction, and the inflow into the gap 13a can be prevented. Then, the roughening of the upper surface 2b of the glass substrate 2 is avoided. Further, in the present embodiment, compressed dry air (CDA) is used as the flushing gas 6. As shown in FIG. 4a, the flushing gas 6 is started immediately before the head portion 2f of the glass substrate 2 being conveyed enters the processing space 13. Further, as shown in FIG. 4b, the flushing gas 6 is stopped before the last portion 2e of the glass substrate 2 being conveyed enters the processing space 13. Here, in the present embodiment, the timing at which the start or stop of the flushing gas 6 is ejected is determined in the following manner. First, the detection means (not shown) such as an induction device through which the head portion 2f or the last portion 2e of the glass substrate 2 passes can be detected on the upstream side of the flushing gas injection nozzle 7 in the transport direction. When the detecting means detects that the first head portion 2f of the glass substrate 2 has passed, the start of the flushing gas 6 is determined based on the transport speed of the glass substrate 2 and the distance from the head portion 2f to the transport path of the processing space 13. The timing. Similarly, when the detecting means detects that the last portion 2e has passed, the timing of stopping the ejection is determined based on the transport speed and the distance from the last portion 2e to the processing space 13. As shown in FIG. 5, the flushing gas injection nozzle 7 is provided with a cylindrical pipe 7a extending in the width direction. A plurality of hoses 7b are inserted into the pipe 7a at intervals in the width direction. The flushing gas 6 can be supplied to the inside of the pipe 7a by the respective hoses 7b. Further, inside the pipe 7a, a plate body 7c elongated in the width direction is attached, and the flushing gas 6 flowing from the respective hoses 7b into the pipe 7a is formed so as to surround the plate body 7c in a meandering manner, and the pipe and the pipe are formed. The injection portion 7d to which 7a is connected is ejected. The injection port of the flushing gas 6 formed in the injection portion 7d is formed in a slit shape elongated in the width direction. The injection angle θ of the flushing gas 6 formed by the injection portion 7d (the angle at which the ejection portion 7d is inclined toward the direction in which the upper surface 2b of the glass substrate 2 is directed) can be changed within a range of 25 to 70 degrees. Further, the posture of the flushing gas injection nozzle 7, as shown by the solid line in Fig. 5, may be adjusted so that the injection portion 7d is directed into the processing space 13, or as shown by a broken line in the figure, the adjustment is made to point the ejection portion 7d outside the processing space 13. [0043] As shown in FIG. 1, the chamber 8 is formed into a rectangular parallelepiped shape. The chamber 8 includes a main body 8a that forms the chamber top hole 8ac and a lid body 8b for caving the chamber top hole 8ac, in addition to the above-described carry-in port 8aa and the unloading port 8ab. The carry-in port 8aa and the carry-out port 8ab are formed in the side wall portion 8ad of the main body 8a, and are formed into a flat open opening in the width direction. The top hole 8ac is formed in a plurality of chamber tops 8ae of the body 8a (three in the present embodiment). The lid body 8b can block the entire opening of the chamber top hole 8ac, and can be attached to and detached from the body 8a. Thereby, the cover 8b can be detached from the main body 8a to open the chamber top hole 8ac, and the operation, adjustment, maintenance, inspection, and the like of the processor 5 can be performed through the chamber top hole 8ac. [0045] The first dummy processor 10 includes a rectangular body 10a disposed below the transport path of the glass substrate 2, and a top plate 10b disposed above the transport path so as to face the case 10a. The H steel 10c for reinforcing the reinforcing member for deflection due to the own weight of the top plate 10b. A gap 21 for allowing the glass substrate 2 to pass is formed between the casing 10a and the top plate 10b. The first dummy processor 10 functions as a windproof member for avoiding an adverse effect on the etching process by the airflow flowing into the chamber 8 from the outlet 8ab to the processing space 13. Here, in order to function effectively as a windproof member, the length of the first dummy processor 10 along the transport direction is preferably 50 mm or more, and more preferably 100 mm or more. [0046] At the upper end of the casing 10a, a rectangular opening 10aa having an elongated shape in the width direction is formed. On the other hand, the bottom portion of the casing 10a communicates with the exhaust pipe 22 that is connected to the washing dust collecting device (not shown) disposed outside the chamber 8. Thereby, the first dummy processor 10 can be used to process the gas 4 flowing from the inside of the processing space 13 toward the downstream side in the transport direction by the lower surface 2a of the glass substrate 2, and the processing gas 4 can be passed through the opening 10aa from the exhaust pipe. After the suction, the air is evacuated toward the washing dust collecting device. The top plate 10b is formed as a single plate body (a plate body having a rectangular shape in plan view), and has a flat surface opposed to the upper surface 2b of the glass substrate 2 through which the gap 21 passes. The H steel 10c is extended on the top plate 10b in the width direction. The first dummy processor 10 has the same outer shape as the processor 5 when viewed in the direction along the transport direction, and is configured to appear to overlap the processor 5. In other words, the width of the body portion 5a of the processor 5 and the casing 10a of the first dummy processor 10 can be made the same as the width dimension and the dimension in the vertical direction. Similarly, (A) the top plate portion 5b of the processor 5 and the top plate 10b of the first dummy processor 10, (B) the H steel 5c of the processor 5, and the H steel 10c, (C) of the first dummy processor 10 are processed. The gap 21 between the processing space 13 of the device 5 and the first dummy processor 10 is the same between the respective combinations of (A) to (C), the width dimension, and the dimension in the vertical direction. The second dummy processor 11 has the same configuration as the above-described first dummy processor 10 except for (1) and (2) shown below. Therefore, the same reference numerals attached to the first dummy processor 10 in FIG. 1 are also attached to the second dummy processor 11, and the description is omitted between the two processors 10, 11. (1) A point different from the first dummy processor 10 is configured. (2) As a point for avoiding the function of the windproof member for the airflow into the processing space 13 from the carry-in port 8aa instead of the carry-out port 8ab, which adversely affects the etching process. Further, similarly to the first dummy processor 10, the second dummy processor 11 has the same outer shape as the processor 5 when viewed in the direction along the transport direction, and is configured to appear to overlap the processor 5. . [0049] The suction nozzle 12 is mounted on the chamber top 8ae of the chamber 8 with its suction port 12a communicating with the space 9. The suction port 12a is disposed on the downstream side of the first dummy processor 10 in the transport direction, and is disposed at the downstream end of the transport direction of the space 9. The suction nozzle 12 is connected to a washing dust collecting device (not shown) disposed outside the chamber 8, and the sucked product can be discharged to the washing dust collecting device. In addition, the suction port 12a is not limited to the same arrangement as the present embodiment, and may be disposed above the transport path of the glass substrate 2. However, since the product generated by the etching process is sucked and discharged to the outside of the chamber 8, the suction port 12a is preferably disposed even when the configuration is different from that of the present embodiment. It is on the downstream side of the processor 5 in the transport direction. [0050] Hereinafter, a method of manufacturing a glass substrate according to an embodiment of the present invention using the above-described glass substrate manufacturing apparatus 1 will be described. First, the glass substrate 2 is conveyed by the transport means 3, and the glass substrate 2 is carried into the chamber 8 from the carry-in port 8aa. In the present embodiment, the glass substrate 2 having a longer length than the entire length of the transport path is used as the object of the etching process with reference to the distance from the transfer port 8aa to the transfer path of the transfer port 8ab. . Further, in the present embodiment, the glass substrate 2 is conveyed at a fixed conveyance speed. [0052] Next, the glass substrate 2 after the loading is passed through the gap 21 of the second dummy processor 11 disposed between the inlet 8aa and the processor 5. Further, the gas that flows into the chamber 8 from the inlet 8aa and flows downstream along the lower surface 2a of the glass substrate 2 toward the downstream side in the conveying direction is the exhaust pipe 22 that is connected to the bottom of the casing 10a of the second dummy processor 11. Suction. In addition to this, by the function of the second dummy processor 11 as a windproof member, the gas flowing into the chamber 8 from the carry-in port 8aa is prevented from reaching the processing space 13 of the processor 5. [0053] Next, the gap 21 of the second dummy processor 11 is passed through the rear glass substrate 2 through the processing space 13 of the processor 5. At this time, the flushing gas 6 is started to be ejected immediately before the head portion 2f of the glass substrate 2 enters the processing space 13. Then, on the lower surface 2a side of the glass substrate 2 through which the processing space 13 passes, the lower surface 2a is etched by the processing gas 4 supplied from each gas supply port 14, and the upstream end and the downstream end are used. Each of the exhaust ports 15 exhausts the process gas 4 from the processing space 13. On the other hand, on the upper surface 2b side of the glass substrate 2 through which the processing space 13 passes, the etching process by the processing gas 4 on the upper surface 2b is prevented by the flow of the flushing gas 6 formed in the gap 13a. Further, the product generated in the etching process is sucked by the suction nozzle 12 and discharged toward the outside of the chamber 8. The flushing gas 6 is stopped before the last portion 2e of the glass substrate 2 enters the processing space 13. [0054] Here, in the present embodiment, the injection of the flushing gas 6 is stopped before the last portion 2e of the glass substrate 2 is about to enter the processing space 13, but it is not limited thereto. If the front head portion 2f of the glass substrate 2 is removed from the processing space 13, the injection of the flushing gas 6 may be stopped earlier than before the last portion 2e of the glass substrate 2 is about to enter the processing space 13. . [0055] Next, the glass substrate 2 subjected to the etching process of the processing space 13 of the processor 5 passes through the gap 21 of the first dummy processor 10 disposed between the processor 5 and the carry-out port 8ab. Further, the gas that flows into the chamber 8 from the outlet 8ab and flows toward the upstream side in the transport direction along the lower surface 2a of the glass substrate 2 is the exhaust pipe 22 that is connected to the bottom of the casing 10a of the first dummy processor 10. Suction. Further, by causing the first dummy processor 10 to function as a windproof member, the gas flowing into the chamber 8 from the outlet 8ab is prevented from reaching the processing space 13 of the processor 5. In addition, the exhaust gas pipe 22 sucks the process gas 4 which is dragged by the lower surface 2a of the glass substrate 2 and flows out from the inside of the processing space 13 toward the downstream side in the conveyance direction, and is exhausted toward the outside of the chamber 8. [0056] Finally, the glass substrate 2 passing through the gap 21 of the first dummy processor 10 is carried out from the outlet 8ab to the outside of the chamber 8. Thus, the glass substrate 2 on which the lower surface 2a has been subjected to an etching treatment is obtained. According to the above, the method for producing a glass substrate according to the embodiment of the present invention is completed. [0057] The main functions and effects of the method for producing a glass substrate according to an embodiment of the present invention will be described below. In this method, the suction port 12a disposed above the transport path of the glass substrate 2 in the chamber 8 and the product generated by the etching process are discharged to the outside of the chamber 8. Therefore, the product having the possibility of forming a foreign matter on the upper surface 2b of the glass substrate 2 and adhering thereto can be excluded from the chamber 8. As a result, adhesion of foreign matter on the upper surface 2b of the glass substrate 2 can be avoided, and deterioration in quality of the glass substrate 2 can be prevented. [0059] Here, the method for producing the glass substrate of the present invention is not limited to the embodiment described in the above embodiment. For example, the configuration of the processor may be different from the processor used in the above embodiment. The processor used in the above embodiment is configured such that a plurality of air supply ports are disposed between the exhaust port at the upstream end and the exhaust port at the downstream end, but it is not limited thereto. It is a configuration in which only one air supply port (for example, disposed at an intermediate position between the two exhaust ports) is disposed between the two exhaust ports.

[0060]

2‧‧‧ glass substrate

2a‧‧‧lower surface

4‧‧‧Processing gas

5‧‧‧ Processor

5a‧‧‧ body part (lower part body)

5b‧‧‧ top plate (upper body)

8‧‧‧ chamber

8aa‧‧‧Move entrance

8ab‧‧‧Moving out

10‧‧‧First virtual processor

11‧‧‧Second dummy processor

12‧‧‧ suction nozzle

12a‧‧ ‧ suction port

13‧‧‧Processing space

14‧‧‧ gas supply port

1 is a schematic longitudinal cross-sectional side view showing a manufacturing apparatus of a glass substrate. 2 is a plan view showing a main body portion of a processor provided in a manufacturing apparatus for a glass substrate as seen from above. Fig. 3a is a vertical cross-sectional side view showing a part of a processor provided in a manufacturing apparatus for a glass substrate. Fig. 3b is a vertical cross-sectional side view showing a part of a processor provided in a manufacturing apparatus for a glass substrate. Fig. 3c is a vertical cross-sectional side view showing a part of a processor provided in a manufacturing apparatus for a glass substrate. Fig. 3d is a vertical cross-sectional side view showing a part of the processor provided in the manufacturing apparatus of the glass substrate. Fig. 4a is a vertical cross-sectional side view showing the vicinity of a flushing gas injection nozzle provided in a manufacturing apparatus for a glass substrate. Fig. 4b is a vertical cross-sectional side view showing the vicinity of the flushing gas injection nozzle provided in the manufacturing apparatus of the glass substrate. Fig. 5 is a longitudinal sectional side view showing the vicinity of a flushing gas injection nozzle provided in a manufacturing apparatus for a glass substrate.

Claims (5)

In a method of producing a glass substrate, the glass substrate that has been carried into the chamber from the transfer port is transported along the transport path in a flat position, and the lower surface is etched by the processing gas supplied from the processor disposed on the transport path. Then, the processed glass substrate is carried out of the chamber by the unloading port, and is characterized in that it is exhausted from the outside of the chamber from a suction port disposed above the transport path in the chamber. . The method for producing a glass substrate according to the first aspect of the invention, wherein the glass substrate is discharged to the outside of the chamber from the suction port at a position downstream of the processor. The method of manufacturing a glass substrate according to the second aspect of the invention, wherein the processor includes an upper structure and a lower structure that face each other with the transport path interposed therebetween, and the lower structure has a pair formed thereon. a processing space between the two constituent bodies is supplied to the processor of the gas supply port of the processing gas, and the first dummy processor is disposed between the processor and the transfer port on the transport path, the first dummy The processor has an exhaust port that is connected to the outside of the chamber by the lower side of the transport path, and has the same outer shape as the processor as viewed in the direction along the transport direction. The method for producing a glass substrate according to the third aspect of the invention, wherein the glass substrate is discharged to the outside of the chamber from the suction port on a downstream side of the first dummy processor. The method of manufacturing a glass substrate according to claim 3, wherein the second dummy processor is disposed between the processor and the transfer port on the transport path, and the second dummy processor has the transport by the The lower side of the path communicates with the exhaust port outside the chamber, and has the same outer shape as the aforementioned processor as viewed in the direction along the transport direction.