TW201830455A - Side injection gas nozzle of plasma etching chamber and plasma reactor device - Google Patents

Abstract

A side injection gas nozzle is suitable for the plasma etching chamber and includes an intake body, a nozzle body and a shielding ring. The intake body has an intake passage through the intake body. The nozzle body is tightly fitted to the intake body. The interior of the nozzle body has a first surface and a gas flow portion adjacency with the first surface. The gas flow portion is interconnected with the intake passage. Outside the nozzle body has a second surface connected with the first surface. The shielding ring is disposed around outside of the nozzle body and formed an outlet passage with the second surface. The outlet passage is interconnected with the gas flow portion. The junction of the first surface and the second surface is perpendicular to each other, and the extending direction of the intake passage and the outlet passage aren't in the same plane.

Description

 Gas side nozzle and plasma reaction device for plasma etching chamber  

The present invention relates to a gas side nozzle and a plasma reaction apparatus for use in a plasma etching chamber.

In the semiconductor industry, plasma technology can be applied to dry etching (ETCHING), physical vapor deposition (PVD) or chemical vapor deposition (CVD). Dry etching is a gas reaction process for transferring the photoresist pattern to the underlying film after the yellow light process. Among them, some high-density plasma dry etching processes use a reactive chemical gas to react with the film, and the reaction gas is blown out through the plurality of gas side nozzles disposed around the cavity toward the surface of the substrate. The challenge is to evenly spread the reactive gas onto the surface of the substrate such that more gas is directed toward the center of the substrate without facing the edge of the substrate.

The dispersion of unstable reaction gases is one of the problems encountered in semiconductor fabrication because it affects the uniformity of etching. In the structure of the gas side nozzle of the conventional plasma etching chamber, since the gas inlet and the gas outlet of the gas side nozzle disposed around the side wall of the cavity are in a straight-through structure, by-products of the process are easily deposited on the nozzle. At the exit, it causes pollution. In addition, the plasma in the cavity will also directly hit the exit of the nozzle to generate particles, which will reduce the yield of the process.

It is an object of the present invention to provide a gas side nozzle and a plasma reaction apparatus for use in a plasma etch chamber. The structural design of the gas side nozzle of the invention not only improves the process pollution caused by the deposition of process pollutants at the nozzle outlet, but also improves the problem that the plasma bombardment nozzle outlet reduces the process yield.

In addition, the plasma reactor of the present invention can solve the problem of uniform distribution of plasma in the chamber.

The invention provides a gas side nozzle suitable for a plasma etching chamber and includes an air intake body, a nozzle body and a shielding ring. The intake body has an intake passage through the intake body. The nozzle body is tightly disposed on the air intake body, and the nozzle body has a first surface and a gas circulation portion adjacent to the first surface, the gas circulation portion is in communication with the air inlet passage, and the outer side of the nozzle body has a connection with the first surface The second surface. The shielding ring ring is disposed outside the nozzle body, and forms an air outlet passage with the second surface of the nozzle body, wherein the air outlet passage is in communication with the gas circulation portion; wherein the connection between the first surface and the second surface of the nozzle body is perpendicular to each other The extending direction of the gas passage is not in the same plane as the extending direction of the outlet passage.

In an embodiment, the direction of extension of the inlet passage is parallel to the direction of extension of the outlet passage.

In one embodiment, the gas circulation portion includes a gas dispersing cavity in communication with the gas inlet passage, and at least one gas dispersing passage communicating with the gas dispersing cavity and the gas outlet passage.

In one embodiment, the number of gas distribution channels is plural and the gas diffusion channels are radial.

In an embodiment, the outside of the nozzle body further has a third surface connected to the second surface, and the shortest distance between the gas diffusion channel and the third surface is greater than or equal to 2.5 mm and less than or equal to 3.5 mm.

In an embodiment, the material of the nozzle body or the shadow ring is alumina, aluminum nitride, tantalum carbide, ceramic or sapphire.

In one embodiment, the gas circulation portion includes a gas dispersing cavity communicating with the intake passage, and a flow body adjacent to the first surface, and the flow body is respectively connected to the gas dispersing cavity and the gas outlet passage, and the material of the circulation body is Porous ceramics.

In an embodiment, the second surface of the nozzle body has a first stage configuration, and the shadow ring has a second stage configuration, the first stage configuration being corresponding to the second stage configuration.

In one embodiment, the shadow ring includes two curved and hollow shields having different inner wall thicknesses.

In an embodiment, the air outlet passage formed by one of the shielding members and the second surface has an air outlet angle, and the air outlet angle is π, π/2, π/3, π/4, or π/6.

In an embodiment, the cross-sectional width of the outlet passage is greater than or equal to 0.5 mm and less than or equal to 1 mm.

The invention further provides a plasma reaction device comprising a cavity and at least one gas side nozzle, wherein the gas side nozzle is disposed in the cavity.

In one embodiment, the number of gas side nozzles is at least seven.

In one embodiment, the cavity includes a cavity gas passage and a cavity gas inlet, and the cavity gas passage is in communication with the cavity gas inlet and the intake passages of the gas side nozzles, respectively.

In one embodiment, the plasma reactor further includes a pumping unit in communication with the chamber, the pumping unit withdrawing gas from the chamber.

As described above, in the gas side nozzle and the plasma reaction apparatus of the present invention, the gas circulation portion inside the nozzle body of the gas side nozzle communicates with the intake passage of the intake body, and is shielded. The ring is disposed on the outer side of the nozzle body and forms an air passage with the outer surface of the nozzle body. Further, the joint between the inner side surface (first surface) and the outer side surface (second surface) of the nozzle body is perpendicular to each other, and the extending direction of the intake passage is not in the same plane as the extending direction of the outlet passage. By the structural design of the gas side nozzle of the present invention, the gas outlet of the gas side nozzle does not directly face the interior of the plasma etching chamber, and the plasma does not directly bombard the air outlet. Therefore, the gas side nozzle of the present invention not only improves process contamination caused by deposition of process contaminants at its outlet, but also improves the problem of reduced process yield. In addition, the plasma reactor of the present invention can solve the problem of uniform distribution of plasma in the cavity in the conventional plasma reaction process through the design of a plurality of gas side nozzles and their outlet angles.

1, 1a, 22, A~H‧‧‧ gas side nozzle

11‧‧‧Intake body

12‧‧‧Nozzle body

121‧‧‧ gas dispersion cavity

122‧‧‧ gas distribution channel

123‧‧‧ Venting holes

124‧‧‧ Circulation body

13‧‧‧ shadow ring

131, 132‧‧‧Shields

2, 2a‧‧‧ plasma reactor

21‧‧‧ cavity

211‧‧‧ side wall

212‧‧‧ cavity gas passage

213‧‧‧ cavity gas inlet

214‧‧‧ top board

23‧‧‧Pumping unit

24‧‧‧ throttle valve

25‧‧‧Loading base

251‧‧‧ openings

27‧‧‧ thimble

3‧‧‧Substrate

C1, C2‧‧‧ plasma distribution curve

D1‧‧‧ shortest distance

D2‧‧‧section width

E1, E2‧‧‧ extending direction

I‧‧‧Intake passage

O‧‧‧Exhaust passage

P‧‧‧Gas Circulation Department

Q-Q‧‧‧ Straight line

S1‧‧‧ first surface

S2‧‧‧ second surface

S3‧‧‧ third surface

T1‧‧‧ first stage construction

T2‧‧‧ second stage structure

X‧‧‧ center point

Y‧‧‧ highest point

θ‧‧‧Outlet angle

1A and 1B are respectively an exploded schematic view and a combined schematic view of a gas side nozzle according to an embodiment of the present invention.

2A is a schematic cross-sectional view of the gas side nozzle of FIG. 1B.

2B is a side elevational view of the gas side nozzle of FIG. 1B.

3A to 3E are schematic views of the outlet passages at different positions of the gas side nozzles and their outlet angles, respectively.

4 is a schematic view of a gas side nozzle according to another embodiment of the present invention.

Figure 5 is a schematic view of a plasma reactor in accordance with an embodiment of the present invention.

Figure 6A is a schematic view of a plasma reactor in accordance with an embodiment of the present invention.

Figure 6B is a cross-sectional view taken along line Q-Q of Figure 6A.

7A to 7H are schematic views respectively showing an outlet angle corresponding to the gas side nozzle of Fig. 6A.

Fig. 8A is a schematic view showing a plasma distribution curve corresponding to the position of a substrate in a plasma reaction apparatus of the prior art.

Figure 8B is a schematic illustration of a plasma distribution curve corresponding to the position of the substrate in the embodiment of the plasma reactor of Figure 6A.

Hereinafter, the gas side nozzle and the plasma reaction apparatus to which the present invention is applied to a plasma etching chamber will be described with reference to the related drawings, wherein the same elements will be described with the same reference numerals. In addition, the illustrations of all the embodiments of the present invention are merely illustrative and do not represent true dimensions and proportions. In addition, the orientations "upper" and "lower" as used in the following embodiments are merely used to indicate relative positional relationships. Furthermore, an element that is "on", "above", "in" or "in" or "in" or "an" or "an" There are other additional components between one component that make one component in direct contact with the other.

The plasma dry etching process is a gas reaction process in which a target (for example, a substrate) is placed in a cavity of a plasma reaction device, and a gas difference between the upper and lower electrodes is applied to make the gas in the cavity. The plasma is generated by ionization, and the reaction gas is blown to the surface of the substrate through a plurality of gas side nozzles disposed on the side walls of the cavity to react with the film by using the reaction gas, thereby performing a dry etching process on the substrate. Hereinafter, the gas side nozzle and the plasma reactor of the present invention will be described through various embodiments.

1A to 2B, wherein FIG. 1A and FIG. 1B are respectively an exploded schematic view and a combined schematic view of a gas side nozzle 1 according to an embodiment of the present invention, and FIG. 2A is a cross-sectional view of the gas side nozzle 1 of FIG. 1B. 2B is a side view of the gas side nozzle 1.

The gas side nozzle 1 is adapted to the plasma etching chamber and is used to allow the reaction gas to enter the chamber of the plasma reactor. The gas side nozzle 1 includes an intake body 11, a nozzle body 12, and a shadow ring 13.

The intake body 11 has an intake passage I that penetrates the intake body 11. The nozzle body 12 is tightly fitted to the intake body 11. Here, the air intake body 11 can be made of an elastic material, such as a soft engineering plastic, and the nozzle body 12 is a hard material, as long as it is a material resistant to corrosion, plasma, and hardness. The air intake body 11 can be coupled to the nozzle body 12 by, for example, but not limited to, locking, bonding or snapping, so that the air intake body 11 and the nozzle body 12 can be tightly coupled. In some embodiments, an adhesive layer (not shown) may be disposed between the junction of the air intake body 11 and the nozzle body 12 such that the two may be tightly coupled to avoid air leakage.

The inside of the nozzle body 12 has a first surface S1 and a gas flow portion P adjacent to the first surface S1, and the gas flow portion P communicates with the intake passage I. As the name implies, the "gas distribution portion P" is a portion of the interior of the nozzle body 12 through which gas can flow, which may include a cavity or a passage, or, if the material of the nozzle body 12 itself contains a hole, the gas circulator may be The category of the gas circulation portion P of the present invention. In the present embodiment, as shown in FIG. 2A, the gas circulation portion P may include a gas diffusion chamber 121 communicating with the intake passage I, and at least one gas distribution passage 122 communicating with the gas dispersion chamber 121. The number of the gas distribution channels 122 is preferably plural, and the number thereof is at least 12, but not limited thereto. As shown in FIG. 2B, the number of the gas distribution channels 122 of the present embodiment is 16. The gas distribution channels 122 are respectively connected to the gas diffusion chamber 121, and extend outward from the gas dispersion chamber 121 to be radially radiated.

Further, the outer side of the nozzle body 12 has a second surface S2 connected to the first surface S1. Here, the second surface S2 is the other surface of the outer surface of the nozzle body 12 that is connected to the first surface S1, and the second surface S2 is the nozzle body 12 with respect to the cavity of the plasma reactor. A side surface that can be directly or indirectly connected to the cavity. Therefore, the gas dispersing passages 122 of the embodiment will form a plurality of air outlet holes 123 on the second surface S2, respectively.

The shielding ring 13 is disposed outside the nozzle body 12, and the shielding ring 13 forms an air outlet passage O with the second surface S2 of the nozzle body 12, and the air outlet passage O communicates with the gas circulation portion P. As shown in FIG. 2B, the outlet passage O can be formed in an arc shape as viewed from one side (left side surface) of the gas side nozzle 1, but is not limited thereto. In some embodiments, the cross-sectional width d2 of the outlet passage O may be greater than or equal to 0.5 mm and less than or equal to 1 mm (0.5 mm ≦ d2 ≦ 1.0 mm).

The connection between the first surface S1 and the second surface s2 of the nozzle body 12 is perpendicular to each other, and the extending direction E1 of the intake passage I and the extending direction E2 of the outlet passage O are not in the same plane. The extending direction E1 of the intake passage I of the present embodiment is substantially parallel to the extending direction E2 of the outlet passage O. However, the intake passage I and the outlet passage O are not directly connected to each other, and the gas enters the intake passage I and is exhausted. When the passage O flows, it is turned through the gas dispersion chamber 121, and the flow direction of the gas in the gas dispersion passage 122 is substantially perpendicular to the flow direction of the outlet passage O. Therefore, when the reaction gas enters the intake body 11, it will be blown out through the air inlet hole 123 through the air inlet passage I, the gas dispersion chamber 121 and the gas distribution passage 122, and then enter the cavity through the air outlet passage O toward the cavity, so that the air is discharged. The holes 123 do not directly face the interior of the plasma etch chamber, so the plasma does not directly bombard the vent holes 123.

In addition, the second surface S2 of the nozzle body 12 of the present embodiment has a first-stage configuration T1, and the shielding ring 13 can have a second-stage configuration T2, and the first-stage configuration T1 is corresponding to the second-stage configuration T2. . Here, the first-stage structure T1 is an annular convex structure, and the second-stage structure T2 is an annular concave structure. The nozzle body 12 presses and fixes the shielding ring 13 by the arrangement of the convex portion and the concave portion structure, so that the shielding ring 13 can be annularly disposed on the second surface S2 of the nozzle body 12. In different embodiments, the first stage configuration T1 may also be an annular recess structure, and the second stage structure T2 is an annular protrusion structure, which is not limited in the present invention.

In addition, the outer side of the nozzle body 12 may further have a third surface S3 connected to the second surface S2. Here, the third surface S3 is a surface of the outer surface of the gas side nozzle 1 facing the inside of the cavity with respect to the cavity of the plasma reactor. In some embodiments, the shortest distance d1 of the gas distribution channel 122 and the third surface S3 may be greater than or equal to 2.5 millimeters and less than or equal to 3.5 millimeters (2.5 mm ≦ d1 ≦ 3.5 mm).

In addition, in this embodiment, the nozzle body 12 and the shielding ring 13 are respectively made of ceramic material, and the air intake body 11 is an engineering plastic, for example, but not limited thereto, in different embodiments, the nozzle body 12 or the shielding body The material of the ring 13 may also be alumina, aluminum nitride, tantalum carbide or sapphire, and the material of the air intake body 11 may also be rubber.

Referring to FIG. 1A and FIG. 1B again, the shadow ring 13 of the present embodiment includes two curved and hollow (hollow semicircular) shielding members 131 and 132, and the shielding members 131 and 132 have different inner portions. Wall thickness. By having different inner wall thicknesses of the shielding members 131, 132, when the shielding ring 13 is combined with the nozzle body 12, an arc-shaped air outlet passage O can be formed with the second surface S2 of the nozzle body 12 (the shielding members 131, 132) The difference in inner wall thickness is the cross-sectional width d2 of the outlet passage O). Specifically, since the shielding members 131 and 132 have different inner wall thicknesses, when the ring is disposed on the outer side of the nozzle body 12, the shielding member of the thicker inner wall, for example, the shielding member 131 will be attached to the nozzle body 12. The outer side (second surface S2) causes the air venting holes 123 of the gas dispersing passage 122 on the second surface S2 to be hidden by the inner wall of the shielding member 131 without being exposed, so that the gas will not be dissipated by the occluded gas distributing passages 122. The air outlet hole 123 is blown out, but the shield member of the thinner inner wall, for example, the shield member 132 will not be fitted to the outer side (the second surface S2) of the nozzle body 12, and the air outlet hole 123 of the gas distributing passage 122 will not be The inner wall of the shielding member 131 is covered and thus exposed, so that the shielding member 132 can form an air passage O with the second surface S2 of the nozzle body 12, so that the gas can be dissipated by the unobstructed gas distributing passage 122 and the air outlet hole 123. Blow it out.

In addition, since the shielding ring 13 disposed on the outer side of the nozzle body 12 is adjustable (for example, the two can be relatively rotated), when the user rotates the shielding ring 13 to perform adjustment, the air outlet holes 123 at different positions can be prevented. The cover ring 13 is covered and exposed, and the user can adjust the position of the air outlet passage O according to the needs thereof.

Please refer to FIG. 3A to FIG. 3E , which are schematic diagrams of the outlet passages at different positions of the gas side nozzles and their outlet angles. In some embodiments, one of the shielding members (eg, the shielding member 132) and the second airflow passage O formed by the second surface S2 may be located on the lower side of the gas side nozzle (also on the upper side, the left side or the right side), and There may be an outgassing angle θ, which may be, for example but not limited to, π (Fig. 3A), π/2 (Fig. 3B), π/3 (Fig. 3C), π/4 (Fig. 3D), or π/6. (Fig. 3E), however, the designer can adjust the thickness position of the inner walls of the shielding members 131 and 132 according to the gas output amount and the air outlet position, and adjust other outlet positions or outlet angles θ. . For example, if the gas side nozzle is required to have an outlet angle of 2π, the shielding members 131 and 132 can have the same thin inner wall, so that the outlet angle θ is π, and the combination of the gas side nozzle can be made. The outlet angle is 2π; or, if the gas side nozzle is required to have an outlet angle of 4π/3 degrees, the thickness position of the inner walls of the shields 131, 132 can be adjusted separately, so that the outlet angle θ of the shield 131 is, for example, π. The outlet angle θ of the shield 132 is, for example, π/3, and the combined overall outlet angle is 4π/3, ..., and so on. The above-described outlet angle θ and outlet position are merely examples and are not intended to limit the present invention.

In the gas-side nozzle 1 of the present embodiment, the gas dispersing chamber 121 inside the nozzle body 12 communicates with the gas dispersing passage 122 and the intake passage I of the intake body 11, respectively, and the shielding ring 13 is annularly disposed on the nozzle body. The outer side of 12 and the second surface S2 on the outer side of the nozzle body 12 form an air passage O. In addition, the connection between the first surface S1 inside the nozzle body 12 and the second surface S2 on the outer side thereof is perpendicular to each other, and the extending direction E1 of the intake passage I and the extending direction E2 of the outlet passage O are not in the same plane. By the structural design of the gas side nozzle 1, when the reaction gas enters the intake body 11, it will be blown out by the air outlet hole 123 through the air inlet passage I, the gas dispersion chamber 121 and the gas distribution passage 122, and then enter the electricity via the air outlet passage O. The slurry is etched into the cavity so that the air outlet hole 123 does not directly face the inside of the plasma etching cavity, and the plasma does not directly bombard the air outlet hole 123. Therefore, the gas side nozzle 1 of the embodiment not only improves the process pollution caused by the deposition of process pollutants at the outlet thereof, but also improves the problem that the plasma directly bombards the outlet of the nozzle to generate particles, thereby reducing the process yield. .

Please refer to FIG. 4, which is a schematic view of a gas side nozzle 1a according to another embodiment of the present invention.

The gas flow portion P of the gas side nozzle 1a of the present embodiment mainly includes a gas diffusion chamber 121 communicating with the intake passage I, and a circulation body adjacent to the first surface S1. 124. Here, the flow body 124 and the intake body 11 form a gas dispersion chamber 121. In addition, the material of the flow body 124 of the present embodiment is a porous ceramic, and is in communication with the gas dispersion chamber 121, the intake passage I, and the outlet passage O, respectively. The porous ceramic (circulation body 124) is a kind of ceramic material, but has a micro-hole itself, so that the flow-through body 124 can communicate with the gas dispersion chamber 121 and the gas outlet passage O through the micro-holes, so no special arrangement is required. The gas distribution channel allows the gas to flow. Further, the second surface S2 of the gas side nozzle 1a also includes a part of the porous ceramic (circulation body 124). Therefore, after the reaction gas enters the intake body 11, it passes through the intake passage I, the gas dispersion chamber 121, and the flow body 124, and is then blown out by the surface of the flow body 124, and then enters the plasma etching chamber through the air outlet passage O.

In addition, other technical features of the gas side nozzle 1a can be referred to the same components of the gas side nozzle 1, and will not be described again.

Please refer to FIG. 5, which is a schematic diagram of a plasma reactor 2 according to an embodiment of the present invention. Here, the plasma reactor 2 can be applied to a dry etching process. The dry etching process uses plasma technology in the reaction chamber to dissociate the molecules of the reactive gas into ions that are reactive with the material to be etched, and these ions react chemically with the exposed portions of the substrate. Thereby part of the product will volatilize and be removed from the substrate, and then the pump will be used to extract the volatiles.

As shown in FIG. 5, the plasma reactor 2 of the present embodiment includes a chamber 21 and at least one gas side nozzle 22, and the gas side nozzle 22 is disposed in the chamber 21. Here, the number of the gas side nozzles 22 is preferably plural, and the cavity 21 includes a side wall 211 (the side wall 211 is made of a conductive metal such as aluminum or stainless steel) and a top plate 214 (non-conducting body). The top plate 214 is closed to the side wall 211, and the gas side nozzles 22 are annularly disposed on the side wall 211 of the cavity 21, and the reaction gas can be respectively blown into the cavity 21. The gas-side nozzles 22 may have one of the above-mentioned gas-side nozzles 1 and 1a, or all of the technical features thereof. For details, refer to the above description, and no further description is provided herein.

In addition, the plasma reactor 2 may further include a carrier base 25 and at least one thimble 27. The substrate 3 can be disposed on the carrier base 25 within the cavity 21. Here, the substrate 3 is embedded in the opening 251 of the carrier base 25 to transmit the substrate 3 through the carrier base 25 . After a voltage difference is applied between the upper electrode (not shown) and the lower electrode (the carrier base 25 includes the lower electrode), the reaction gas in the cavity 21 can be ionized to generate a plasma to utilize the plasma to align the base. Material 3 is dry etched. After the substrate 3 completes the etching process, the substrate 3 can be lifted up by the ejector needle 27, and the substrate 3 can be removed and replaced by, for example, a robot arm.

In addition, the plasma reactor 2 of the present embodiment may further include an air extraction unit 23 and a throttle valve 24, for example, an air pump, which is transparent to the interior of the cavity 21 through the throttle valve 24. Connected. By controlling the operation of the suction unit 23 and the throttle valve 24, the reaction gas in the chamber 21 can be extracted to maintain the gas pressure in the chamber 21 within a certain range.

In the prior art, since the reaction gas in the cavity 21 is extracted by the suction unit 23 to communicate with the cavity 21, the cavity 21 is not a symmetrical structure, so that the cavity is formed in the process of vapor deposition. The plasma distribution in the body 21 is not uniform. Please refer to FIG. 8A first, which is a schematic diagram of a plasma distribution curve C1 corresponding to the position of the substrate in the plasma reaction apparatus of the prior art. In the plasma distribution curve C1 corresponding to the position of the substrate, the plasma distribution is not the highest at the center point X of the substrate, but has the highest plasma distribution at the side of the substrate away from the suction unit ( The highest point of plasma distribution is Y). Therefore, in the following, the problem of uniform distribution of plasma in the cavity will be solved by the arrangement of a plurality of gas side nozzles.

6A and 6B, wherein FIG. 6A is a schematic view of a plasma reactor 2a according to an embodiment of the present invention, and FIG. 6B is a cross-sectional view along line Q-Q of FIG. 6A.

Here, FIG. 6A shows the structure of the cavity 21 in plan view of the plasma reactor 2a. The gas side nozzle is disposed on the side wall 211 of the cavity 21 of the plasma reactor 2a. In some embodiments, the number of the gas side nozzles of the plasma reactor 2a may be at least 7, but not limited thereto. The number of the gas side nozzles of the plasma reactor 2a of the present embodiment is eight, and is uniformly disposed on the side wall 211, starting from the 9 o'clock direction on the left side, and labeled as A, B, ... H in the clockwise direction. . The gas-side nozzles A to H may have the above-mentioned gas-side nozzles 1 , or all of the technical features thereof. For details, refer to the above, and no further details are provided. In addition, in different embodiments, the gas side nozzles A to H may respectively have the above-described gas side nozzles 1a, or all the technical features thereof, and the specific technical content will not be described again.

In addition, the cavity 21 of the embodiment may further include a cavity gas passage 212 and a cavity gas inlet 213. Here, the cavity gas inlet 213 corresponds to the outer position of the gas side nozzle A, and the cavity gas passage 212 is also annular in plan view. The cavity gas passages 212 can communicate with the cavity gas inlets 213 and the gas inlet channels I of the gas side nozzles A to H, respectively. Therefore, the reaction gas can enter the cavity gas passage 212 from the cavity gas inlet 213, and enter the cavity 21 through the intake passages I and the outlet passages O of the gas side nozzles A to H, respectively.

In order to solve the problem of the uniform distribution of the plasma in the cavity 21, the gas side nozzles A to H of the embodiment need to make the gas outlets of the gas side nozzles A to H out of the air outlet nozzles A to H according to different installation positions. Angles have different configurations. Please refer to FIG. 7A to FIG. 7H , which are schematic diagrams of the outlet angles corresponding to the gas side nozzles A to H of FIG. 6A , respectively.

In this embodiment, the gas outlet passages O of the gas side nozzles A to H respectively have an outlet angle θ, and the outlet angle θ can be π/3, π/4, π, 4π/3, and 2π, respectively. one. Here, as shown in Fig. 7A, the gas outlet angle θ of the gas side nozzle A is π/3, the gas outlet angles θ of the gas side nozzles B and H are respectively π/2, and the gas outlet angles θ of the gas side nozzles C and G are respectively π. The gas outlet angles θ of the gas side nozzles D and F are respectively 4π/3, and the gas outlet angle θ of the gas side nozzle E is 2π. However, it is not limited thereto, and in different embodiments, the plasma can be used. The distribution of the different number of gas side nozzles, the corresponding outlet angle and the position of the outlet passage are not limited by the present invention.

8A and 8B, wherein FIG. 8B is a schematic diagram of a plasma distribution curve C2 corresponding to the position of the substrate in the embodiment of the plasma reactor 2a of FIG. 6A.

In FIG. 8A, the plasma distribution curve C1 corresponding to the position of the substrate is not the highest in the plasma distribution at the center point X of the substrate, but the highest in the side of the substrate away from the suction unit 23. Plasma distribution (the highest point Y is biased to the right side of the substrate). However, through the design of the different outlet angles of the gas side nozzles A to H of the present embodiment at different installation positions, the plasma at the position of the center point X of the substrate can be obtained in the plasma distribution curve C2 corresponding to the position of the substrate. The distribution concentration is the highest, and the farther away from the center point X, the lower. Therefore, the design of the plasma reaction device 2a of the present embodiment through the gas side nozzles A to H and the design of the gas outlet angle can solve the problem of uniform plasma distribution in the conventional plasma reaction process.

In summary, in the gas side nozzle and the plasma reaction device of the present invention, the gas circulation portion inside the nozzle body of the gas side nozzle communicates with the intake passage of the intake body, and is shielded. The ring is disposed on the outer side of the nozzle body and forms an air passage with the outer surface of the nozzle body. Further, the joint between the inner side surface (first surface) and the outer side surface (second surface) of the nozzle body is perpendicular to each other, and the extending direction of the intake passage is not in the same plane as the extending direction of the outlet passage. By the structural design of the gas side nozzle of the present invention, the gas outlet of the gas side nozzle does not directly face the interior of the plasma etching chamber, and the plasma does not directly bombard the air outlet. Therefore, the gas side nozzle of the present invention not only improves process contamination caused by deposition of process contaminants at its outlet, but also improves the problem of reduced process yield. In addition, the plasma reactor of the present invention can solve the problem of uniform distribution of plasma in the cavity in the conventional plasma reaction process through the design of a plurality of gas side nozzles and their outlet angles.

The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.

Claims (15)

 A gas side nozzle is applicable to a plasma etching chamber, and comprises: an air intake body having an air inlet passage extending through the air intake body; a nozzle body closely fitted to the air intake body, the nozzle body The portion has a first surface and a gas circulation portion adjacent to the first surface, the gas circulation portion is in communication with the inlet passage, the nozzle body has a second surface connected to the first surface, and a shielding a ring, the ring is disposed outside the nozzle body, and forms an air outlet passage with the second surface of the nozzle body, the air outlet passage is in communication with the gas flow portion; wherein the first surface and the second surface of the nozzle body The joints are perpendicular to each other, and the direction in which the inlet passage extends is not in the same plane as the direction in which the outlet passage extends.    The gas side nozzle of claim 1, wherein the inlet passage extends in a direction parallel to the direction in which the outlet passage extends.    The gas side nozzle according to claim 1, wherein the gas circulation portion includes a gas dispersing cavity communicating with the air inlet passage, and at least one gas dispersing passage communicating with the gas dispersing cavity and the air outlet passage.    The gas side nozzle according to claim 3, wherein the number of the gas distribution channels is plural, and the gas diffusion channels are radial.    The gas side nozzle of claim 3, wherein the outer side of the nozzle body further has a third surface connected to the second surface, and the shortest distance between the gas distribution channel and the third surface is greater than or equal to 2.5 mm. And less than or equal to 3.5 mm.    The gas side nozzle according to claim 1, wherein the material of the nozzle body or the shielding ring is alumina, aluminum nitride, tantalum carbide, ceramic or sapphire.    The gas side nozzle according to claim 1, wherein the gas circulation portion includes a gas diffusion chamber communicating with the air inlet passage, and a circulation body adjacent to the first surface, the circulation body respectively The gas dispersing cavity and the gas outlet passage are in communication, and the material of the flow body is a porous ceramic.    The gas side nozzle of claim 1, wherein the second surface of the nozzle body has a first stage configuration, the shadow ring has a second stage configuration, the first stage configuration and the second stage Construct the corresponding settings.    The gas side nozzle of claim 1, wherein the shielding ring comprises two arcuate and hollow shielding members having different inner wall thicknesses.    The gas side nozzle according to claim 9, wherein one of the shielding members and the air outlet passage formed by the second surface has an outlet angle, and the outlet angle is π, π/2, π/ 3. π/4, or π/6.    The gas side nozzle of claim 1, wherein the outlet passage has a cross-sectional width greater than or equal to 0.5 mm and less than or equal to 1 mm.    A plasma reaction apparatus comprising: a cavity; and at least one gas side nozzle according to any one of claims 1 to 11, wherein the gas side nozzle is disposed in the cavity.    The plasma reactor according to claim 12, wherein the number of the gas side nozzles is at least 7.    The plasma reaction device of claim 13, wherein the cavity comprises a cavity gas channel and a cavity gas inlet, the cavity gas channel and the cavity gas inlet and the gas side nozzles respectively The intake passages are in communication.    The plasma reaction device of claim 12, further comprising: an air extraction unit in communication with the cavity, the air extraction unit extracting gas from the cavity.