TW201837250A - Wire saw system for improving a surface profile of a wafer - Google Patents
Wire saw system for improving a surface profile of a wafer Download PDFInfo
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- TW201837250A TW201837250A TW106121311A TW106121311A TW201837250A TW 201837250 A TW201837250 A TW 201837250A TW 106121311 A TW106121311 A TW 106121311A TW 106121311 A TW106121311 A TW 106121311A TW 201837250 A TW201837250 A TW 201837250A
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- 238000006073 displacement reaction Methods 0.000 claims abstract description 56
- 238000005520 cutting process Methods 0.000 claims description 204
- 238000001816 cooling Methods 0.000 claims description 18
- 239000000110 cooling liquid Substances 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 5
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- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/005—Devices for the automatic drive or the program control of the machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/02—Accessories specially adapted for use with machines or devices of the preceding groups for removing or laying dust, e.g. by spraying liquids; for cooling work
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Abstract
Description
本發明屬於半導體設備技術領域,特別是涉及一種改善晶圓表面切割形貌的線切割系統。 The invention belongs to the technical field of semiconductor equipment, and particularly relates to a wire cutting system for improving the cutting morphology of a wafer surface.
在晶圓製造過程中,需要將晶錠進行切割以得到所需的晶圓。目前最常用的晶圓切割設備即為線切割機,現有的線切割機的結構如圖1所示,由圖1可知,所述線切割機包括:線鋸11、夾軌12、切割線導軌14及切割線15;所述夾軌12一端固定於所述線鋸11上而另一端經由鍵合樹脂層13固定待切割晶錠16,所述夾軌12適用於在所述線鋸11的驅動下帶動所述待切割晶錠16向所述切割線15運動;所述切割線15繞置於所述切割線導軌14上,適用於在所述切割線導軌14的驅動下運動並對所述待切割晶錠16進行線切割。 In the wafer manufacturing process, the ingot needs to be cut to obtain the required wafer. At present, the most commonly used wafer cutting equipment is a wire cutting machine. The structure of an existing wire cutting machine is shown in FIG. 1. As can be seen from FIG. 1, the wire cutting machine includes: a wire saw 11, a clamp rail 12, and a cutting wire guide. 14 and cutting line 15; one end of the clip rail 12 is fixed to the wire saw 11 and the other end is fixed to the ingot 16 to be cut through the bonding resin layer 13, and the clip rail 12 is suitable for Driving the ingot 16 to be moved to the cutting line 15 under driving; the cutting line 15 is wound on the cutting line guide 14 and is suitable for moving under the driving of the cutting line guide 14 and The ingot 16 to be cut is subjected to wire cutting.
但由於所述切割線15會存在表面缺陷,這些表面缺陷會導致切割的晶圓表面存在奈米拓撲結構形貌(nanotopology),所謂奈米拓撲結構形貌是指在晶圓表面形成具有0.2mm~20mm左右的空間波長偏差。但現有的線切割機並不能通過自身改善從所述待切割晶錠16切割晶圓時造成的所述奈米拓撲結構形貌。為了減輕或改善所述奈米拓撲結構形貌偏差,一般需要額外的製程步驟對切割的晶圓進行處理,但這無疑會造成時間與成 本的浪費。 However, because the cutting line 15 has surface defects, these surface defects will cause a nanotopology on the surface of the cut wafer. The so-called nanotopology refers to the formation of 0.2mm on the wafer surface. Spatial wavelength deviation of ~ 20mm. However, the existing wire cutting machine cannot improve the nano topological structure caused by cutting the wafer from the ingot 16 to be cut by itself. In order to reduce or improve the deviation of the nano-topological structure topography, an additional process step is generally required to process the cut wafer, but this will undoubtedly cause a waste of time and cost.
鑒於以上所述現有技術的缺點,本發明的目的在於提供一種改善晶圓表面切割形貌的線切割系統,用於解決現有技術中的線切割機無法通過自身改善切割得到的晶圓表面形態,而必須借助額外的製程步驟而導致的時間與成本浪費的問題。 In view of the shortcomings of the prior art described above, an object of the present invention is to provide a wire cutting system for improving the cutting surface morphology of a wafer surface, which is used to solve the wafer surface morphology that cannot be improved by the wire cutting machine in the prior art. And the time and cost caused by the extra process steps must be used.
為實現上述目的及其他相關目的,本發明提供一種改善晶圓表面切割形貌的線切割系統,所述改善晶圓表面切割形貌的線切割系統包括:晶錠進給裝置、切割線及切割線驅動裝置;所述晶錠進給裝置適用於固定待切割晶錠,並驅動所述待切割晶錠向所述切割線運動,所述切割線驅動裝置適用於驅動所述切割線運動,並對所述待切割晶錠進行線切割;還包括:壓力感測器,位於所述晶錠進給裝置上,適用於偵測所述待切割晶錠對所述切割線的壓力;第一位移感測器,位於所述晶錠進給裝置上,適用於偵測所述待切割晶錠的運動及位置偏移;第一溫度感測器,適用於偵測待切割晶錠與所述切割線接觸區域的溫度;速度感測器,適用於偵測所述切割線的運動速度。 In order to achieve the above object and other related objects, the present invention provides a wire cutting system for improving the cutting surface morphology of a wafer surface. The wire cutting system for improving the cutting surface morphology of a wafer surface includes: an ingot feeding device, a cutting line, and cutting. Line driving device; the ingot feeding device is suitable for fixing the ingot to be cut, and driving the ingot to be cut to move to the cutting line, and the cutting line driving device is suitable for driving the cutting line, and Wire cutting the ingot to be cut; further comprising: a pressure sensor, located on the ingot feeding device, adapted to detect the pressure of the ingot to be cut on the cutting line; a first displacement A sensor is located on the ingot feeding device and is suitable for detecting the movement and position shift of the ingot to be cut; a first temperature sensor is suitable for detecting the ingot to be cut and the cutting The temperature of the line contact area; the speed sensor is adapted to detect the moving speed of the cutting line.
作為本發明的改善晶圓表面切割形貌的線切割系統的一種優選方案,所述晶錠進給裝置包括線鋸及夾軌;所述夾軌一端固定所述待切割晶錠,另一端與所述線鋸相連接;所述線鋸適用於驅動所述夾軌及所述切割晶錠運動。 As a preferred solution of the wire cutting system for improving the cutting profile of the wafer surface of the present invention, the ingot feeding device includes a wire saw and a clamping rail; one end of the clamping rail is fixed to the ingot to be cut, and the other end is connected with The wire saw is connected; the wire saw is adapted to drive the clamp rail and the cutting ingot to move.
作為本發明的改善晶圓表面切割形貌的線切割系統的一種優選方案,所述晶錠進給裝置還包括鍵合樹脂層,所述鍵合樹脂層位於所 述夾軌與所述待切割晶錠之間,適用於將所述待切割晶錠固定於所述夾軌上。 As a preferred solution of the wire cutting system for improving the cutting morphology of the wafer surface of the present invention, the ingot feeding device further includes a bonding resin layer, and the bonding resin layer is located on the clamping rail and the to-be-cut The ingots are suitable for fixing the ingot to be cut on the clamping rail.
作為本發明的改善晶圓表面切割形貌的線切割系統的一種優選方案,所述第一位移感測器為六軸加速度感測器。 As a preferred solution of the wire cutting system for improving the cutting profile of the wafer surface of the present invention, the first displacement sensor is a six-axis acceleration sensor.
作為本發明的改善晶圓表面切割形貌的線切割系統的一種優選方案,所述第一溫度感測器為紅外感測器。 As a preferred solution of the wire cutting system for improving the cutting morphology of the wafer surface of the present invention, the first temperature sensor is an infrared sensor.
作為本發明的改善晶圓表面切割形貌的線切割系統的一種優選方案,所述線切割系統還包括:資料記憶體,與所述壓力感測器、所述第一位移感測器、所述第一溫度感測器及所述速度感測器通訊連接,適用於將所述壓力感測器、所述第一位移感測器、所述第一溫度感測器及所述速度感測器偵測的資料進行存儲;處理器,與所述資料記憶體相連接,適用於提取所述資料記憶體中存儲的所述壓力感測器、所述第一位移感測器、所述第一溫度感測器及所述速度感測器偵測的資料,並依據提取的資料設定線切割製程程式,以對線切割製程進行控制。 As a preferred solution of the wire cutting system for improving the cutting surface morphology of a wafer surface of the present invention, the wire cutting system further includes: a data memory, and the pressure sensor, the first displacement sensor, The first temperature sensor and the speed sensor are communicatively connected, and are suitable for connecting the pressure sensor, the first displacement sensor, the first temperature sensor, and the speed sensor. The data detected by the processor is stored; the processor is connected to the data memory and is adapted to extract the pressure sensor, the first displacement sensor, the first sensor stored in the data memory A temperature sensor and data detected by the speed sensor, and a wire cutting process program is set according to the extracted data to control the wire cutting process.
作為本發明的改善晶圓表面切割形貌的線切割系統的一種優選方案,所述線切割系統還包括處理器,所述處理器與所述壓力感測器、所述第一位移感測器、所述第一溫度感測器及所述速度感測器通訊連接,適用於依據與所述壓力感測器、所述第一位移感測器、所述第一溫度感測器及所述速度感測器偵測的資料設定線切割製程程式,以對線切割製程進行控制。 As a preferred solution of the wire cutting system for improving the cutting surface morphology of a wafer surface of the present invention, the wire cutting system further includes a processor, the processor, the pressure sensor, and the first displacement sensor. The first temperature sensor and the speed sensor are communicatively connected, and are suitable for being connected with the pressure sensor, the first displacement sensor, the first temperature sensor, and the The data detected by the speed sensor sets the wire cutting process program to control the wire cutting process.
作為本發明的改善晶圓表面切割形貌的線切割系統的一種優選方案,所述切割線驅動裝置包括切割線導軌,所述切割線繞置於所述 切割線導軌上;所述切割線導軌的數量為若干個,若干個所述切割線導軌位於所述待切割晶錠運動路徑的兩側,適用於驅動所述切割線運動以對所述待切割晶錠進行線切割。 As a preferred solution of the wire cutting system for improving the cutting morphology of the wafer surface of the present invention, the cutting wire driving device includes a cutting wire guide, and the cutting wire is wound on the cutting wire guide; the cutting wire guide The number is several, and several of the cutting line guides are located on both sides of the moving path of the ingot to be cut, and are suitable for driving the moving of the cutting line to perform line cutting on the ingot to be cut.
作為本發明的改善晶圓表面切割形貌的線切割系統的一種優選方案,所述線切割系統還包括:固定部,位於各所述切割線導軌的兩端;所述固定部內設有第一冷卻管路,所述固定部表面設有與所述第一冷卻管路相連接的第一進口及第一出口;所述切割線導軌內設有第二冷卻管路,所述切割線導軌端面設有與所述第二冷卻管路相連通的第二進口及第二出口;熱交換器,與所述第一進口、第一出口、第二進口及第二出口相連接,適用於向所述第一冷卻管路及所述第二冷卻管路內提供冷卻液體;第二溫度感測器,位於所述切割線導軌端面,並與所述資料記憶體相連接,適用於偵測所述切割線導軌的溫度及流經所述切割線導軌的冷卻液體的溫度,並將偵測的溫度資料存儲於所述資料記憶體內;第三溫度感測器,位於所述固定部表面,並與所述資料記憶體相連接,適用於偵測所述固定部的溫度及流經所述固定部的冷卻液體的溫度,並將偵測的溫度資料存儲於所述資料記憶體內;第二位移感測器,位於所述切割線導軌端面,並與所述資料記憶體相連接,適用於偵測所述切割線導軌的運動及軸向位移,並將偵測的資料存儲於所述資料記憶體內;第三位移感測器,位於所述固定部表面,並與所述資料記憶體相連接,適用於偵測所述固定部的運動,並將偵測的資料存儲於所述資料記憶體內;所述處理器適用於提取所述資料記憶體中存儲的所述壓力感測器、所述第一位移感測器、所述第一溫度感測器、所述速度感測器、所述第二溫度感測器、所述第三溫度感測器、所 述第二位移感測器及所述第三位移感測器偵測的資料,並依據提取的資料設定線切割製程程式,以對線切割製程進行控制。 As a preferred solution of the wire cutting system for improving the cutting surface morphology of a wafer surface of the present invention, the wire cutting system further includes: a fixing portion located at both ends of each of the cutting line guide rails; A cooling pipe, the surface of the fixed part is provided with a first inlet and a first outlet connected to the first cooling pipe; a second cooling pipe is provided in the cutting line guide, and the cutting line guide The end surface is provided with a second inlet and a second outlet communicating with the second cooling pipeline; a heat exchanger is connected to the first inlet, the first outlet, the second inlet and the second outlet, and is suitable for supplying to the A cooling liquid is provided in the first cooling pipeline and the second cooling pipeline; a second temperature sensor is located on the end surface of the cutting line guide rail and is connected to the data memory, which is suitable for detecting all The temperature of the cutting line guide and the temperature of the cooling liquid flowing through the cutting line guide, and storing the detected temperature data in the data memory; a third temperature sensor is located on the surface of the fixed part, and With the data memory It is suitable for detecting the temperature of the fixed part and the temperature of the cooling liquid flowing through the fixed part, and storing the detected temperature data in the data memory; a second displacement sensor located in the data memory; The end face of the cutting line guide is connected to the data memory, and is suitable for detecting the movement and axial displacement of the cutting line guide, and storing the detected data in the data memory; a third displacement sensing A processor, located on the surface of the fixed portion and connected to the data memory, adapted to detect the movement of the fixed portion and store the detected data in the data memory; the processor is adapted to Extracting the pressure sensor, the first displacement sensor, the first temperature sensor, the speed sensor, the second temperature sensor, stored in the data memory, The third temperature sensor, the second displacement sensor, and the data detected by the third displacement sensor, and a wire cutting process program is set according to the extracted data to control the wire cutting process.
如上所述,本發明的改善晶圓表面切割形貌的線切割系統,具有以下有益效果:本發明的線切割系統通過增設壓力感測器、第一位移感測器、第一溫度感測器及速度感測器,可以即時偵測待切割晶錠對切割線的壓力、待切割晶錠的運動及位置偏移、待切割晶錠與切割線接觸區域的溫度及切割線的運動速度,使用者可以根據偵測的上述資料調整設定線切割製程程式,以對線切割製程進行控制,從而改善切割得到的晶圓表面的形貌,避免切割得到的晶圓表面存在納米拓撲結構形貌。 As described above, the wire cutting system of the present invention for improving the surface cutting morphology of a wafer has the following beneficial effects: The wire cutting system of the present invention is provided with a pressure sensor, a first displacement sensor, and a first temperature sensor by adding a pressure sensor, a first displacement sensor, and a first temperature sensor. And speed sensor, which can detect the pressure of the ingot to be cut on the cutting line, the movement and position deviation of the ingot to be cut, the temperature of the area where the ingot is in contact with the cutting line, and the speed of the cutting line. The user can adjust and set the wire cutting process program according to the detected data, so as to control the wire cutting process, thereby improving the morphology of the wafer surface obtained by cutting and avoiding the nano-topological structure of the surface of the wafer obtained by cutting.
11‧‧‧線鋸 11‧‧‧Wire saw
12‧‧‧夾軌 12‧‧‧ clip rail
13‧‧‧鍵合樹脂層 13‧‧‧ Bonded resin layer
14‧‧‧切割線導軌 14‧‧‧Cutting Line Guide
15‧‧‧切割線 15‧‧‧cut line
16‧‧‧待切割晶錠 16‧‧‧ Ingot to be cut
211‧‧‧線鋸 211‧‧‧Wire saw
212‧‧‧夾軌 212‧‧‧Clip rail
213‧‧‧鍵合樹脂層 213‧‧‧bonded resin layer
22‧‧‧切割線 22‧‧‧cut line
23‧‧‧切割線導軌 23‧‧‧Cutting Line Guide
231‧‧‧第二進口 231‧‧‧Second Import
232‧‧‧第二出口 232‧‧‧Second Exit
24‧‧‧固定部 24‧‧‧Fixed section
241‧‧‧第一進口 241‧‧‧First Import
242‧‧‧第二進口 242‧‧‧Second Import
25‧‧‧壓力感測器 25‧‧‧Pressure sensor
26‧‧‧第一位移感測器 26‧‧‧The first displacement sensor
27‧‧‧第一溫度感測器 27‧‧‧The first temperature sensor
28‧‧‧速度感測器 28‧‧‧speed sensor
29‧‧‧資料記憶體 29‧‧‧Data Memory
30‧‧‧處理器 30‧‧‧ processor
31‧‧‧熱交換器 31‧‧‧Heat exchanger
32‧‧‧第二溫度感測器 32‧‧‧Second temperature sensor
33‧‧‧第三溫度感測器 33‧‧‧Third temperature sensor
34‧‧‧第二位移感測器 34‧‧‧Second displacement sensor
35‧‧‧第三位移感測器 35‧‧‧Third displacement sensor
36‧‧‧待切割晶錠 36‧‧‧ Ingot to be cut
圖1顯示為現有技術的改善晶圓表面切割形貌的線切割系統的結構示意圖。 FIG. 1 is a schematic structural diagram of a wire cutting system for improving the surface cutting morphology of a wafer in the prior art.
圖2至圖5顯示為本發明的改善晶圓表面切割形貌的線切割系統的結構示意圖。 FIG. 2 to FIG. 5 are structural schematic diagrams of a wire cutting system for improving a wafer surface cutting morphology according to the present invention.
以下透過特定的具體實例說明本發明的實施方式,本領域技術人員可由本說明書所揭露的內容輕易地瞭解本發明的其他優點與功效。本發明還可以透過另外不同的具體實施方式加以實施或應用,本說明書中的各項細節也可以基於不同觀點與應用,在沒有背離本發明的精神下進行各種修飾或改變。 The following describes the embodiments of the present invention through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through different specific embodiments. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
請參閱圖2至圖5。需要說明的是,本實施例中所提供的圖示僅以示意方式說明本發明的基本構想,雖圖示中僅顯示與本發明中有關的 組件而非按照實際實施時的元件數目、形狀及尺寸繪製,其實際實施時各元件的型態、數量及比例可為一種隨意的改變,且其元件佈局形態也可能更為複雜。 See Figures 2 to 5. It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of the present invention in a schematic manner, although the illustrations only show the components related to the present invention and not the number, shape and For size drawing, the type, quantity, and proportion of each component can be changed at will in actual implementation, and the layout of the components may be more complicated.
請參閱圖2,本發明提供一種改善晶圓表面切割形貌的線切割系統,所述改善晶圓表面切割形貌的線切割系統包括:晶錠進給裝置、切割線22及切割線驅動裝置;所述晶錠進給裝置適用於固定待切割晶錠36,並驅動所述待切割晶錠36向所述切割線22運動,所述切割線驅動裝置適用於驅動所述切割線22運動,並對所述待切割晶錠36進行線切割;所述線切割系統還包括:壓力感測器25,所述壓力感測器25位於所述晶錠進給裝置上,適用於偵測所述待切割晶錠36對所述切割線22的壓力;第一位移感測器26,所述第一位移感測器26位於所述晶錠進給裝置上,適用於偵測所述待切割晶錠36的運動及位置偏移;第一溫度感測器27,所述第一溫度感測器27適用於偵測所述待切割晶錠36與所述切割線22接觸區域的溫度;速度感測器28,所述速度感測器28適用於偵測所述切割線22的運動速度。 Please refer to FIG. 2, the present invention provides a wire cutting system for improving the cutting surface morphology of a wafer surface. The wire cutting system for improving the cutting surface morphology of a wafer surface includes an ingot feeding device, a cutting line 22 and a cutting line driving device. The ingot feeding device is suitable for fixing the ingot 36 to be cut and driving the ingot 36 to be moved toward the cutting line 22, and the cutting line driving device is suitable for driving the cutting line 22 to move, And wire cutting the ingot to be cut 36; the wire cutting system further includes: a pressure sensor 25, which is located on the ingot feeding device and is suitable for detecting the ingot Pressure of the ingot to be cut 36 on the cutting line 22; a first displacement sensor 26, the first displacement sensor 26 is located on the ingot feeding device and is suitable for detecting the ingot to be cut Movement and position shift of the ingot 36; a first temperature sensor 27, the first temperature sensor 27 is adapted to detect a temperature in a contact area between the ingot 36 to be cut and the cutting line 22; a sense of speed Detector 28, the speed sensor 28 is adapted to detect the Moving speed.
作為示例,所述晶錠進給裝置包括線鋸211及夾軌212;所述夾軌212一端固定所述待切割晶錠36而另一端與所述線鋸211相連接;所述線鋸211適用於驅動所述夾軌212及所述切割晶錠36運動。 As an example, the ingot feeding device includes a wire saw 211 and a clamp rail 212; one end of the clamp rail 212 fixes the ingot 36 to be cut and the other end is connected to the wire saw 211; the wire saw 211 It is suitable for driving the clamp rail 212 and the cutting ingot 36 to move.
作為示例,所述晶錠進給裝置還包括鍵合樹脂層213,所述鍵合樹脂層213位於所述夾軌212與所述待切割晶錠36之間,適用於將所述待切割晶錠36固定於所述夾軌212上。 As an example, the ingot feeding device further includes a bonding resin layer 213, which is located between the clamp rail 212 and the ingot 36 to be cut, and is suitable for the ingot to be cut. The ingot 36 is fixed on the clamping rail 212.
作為示例,所述第一位移感測器26可以為但不僅限於六軸加速度感測器。 As an example, the first displacement sensor 26 may be, but is not limited to, a six-axis acceleration sensor.
作為示例,所述第一溫度感測器27由於用於偵測所述待切割晶錠36與所述切割線22接觸區域的溫度,所述第一溫度感測器27為了不影響所述切割線22對所述待切割晶錠36的切割,所述第一溫度感測器27設置於所述待切割晶錠36的外側;優選地,本實施例中,所述第一溫度感測器27可以為紅外線感測器。 As an example, since the first temperature sensor 27 is used to detect a temperature in a contact area between the ingot to be cut 36 and the cutting line 22, the first temperature sensor 27 does not affect the cutting The line 22 cuts the ingot 36 to be cut, and the first temperature sensor 27 is disposed outside the ingot 36 to be cut. Preferably, in this embodiment, the first temperature sensor 27 may be an infrared sensor.
在一示例中,如圖3所示,所述線切割系統還包括:資料記憶體29,所述資料記憶體29與所述壓力感測器25、所述第一位移感測器26、所述第一溫度感測器27及所述速度感測器28通訊連接,適用於將所述壓力感測器25、所述第一位移感測器26、所述第一溫度感測器27及所述速度感測器28偵測的資料進行存儲;所述資料記憶體29與所述壓力感測器25、所述第一位移感測器26、所述第一溫度感測器27及所述速度感測器28之間可以透過任意一種無線通訊方式或有線通訊方式進行通訊連接;優選地,本實施例中,所述資料記憶體29與所述壓力感測器25、所述第一位移感測器26、所述第一溫度感測器27及所述速度感測器28之間透過任藍牙、2G、3G、4G或Wi-Fi等無線通訊方式進行通訊連接;處理器30,所述處理器30與所述資料記憶體29相連接,適用於提取所述資料記憶體29中存儲的所述壓力感測器25、所述第一位移感測器26、所述第一溫度感測器27及所述速度感測器28偵測的資料,並依據提取的資料設定線切割製程程式,以對線切割製程進行控制。 In an example, as shown in FIG. 3, the wire cutting system further includes: a data memory 29, the data memory 29 and the pressure sensor 25, the first displacement sensor 26, all The first temperature sensor 27 and the speed sensor 28 are communicatively connected, and are suitable for connecting the pressure sensor 25, the first displacement sensor 26, the first temperature sensor 27, and The data detected by the speed sensor 28 is stored; the data memory 29 and the pressure sensor 25, the first displacement sensor 26, the first temperature sensor 27, and all The speed sensor 28 can be connected through any wireless communication method or wired communication method. Preferably, in this embodiment, the data memory 29, the pressure sensor 25, and the first The displacement sensor 26, the first temperature sensor 27, and the speed sensor 28 are connected via wireless communication methods such as Bluetooth, 2G, 3G, 4G, or Wi-Fi; the processor 30, The processor 30 is connected to the data memory 29, and is adapted to extract the data stored in the data memory 29. The data detected by the pressure sensor 25, the first displacement sensor 26, the first temperature sensor 27, and the speed sensor 28, and setting a wire cutting process program according to the extracted data, To control the wire cutting process.
在另一示例中,如圖4所示,所述線切割系統還包括處理器30,所述處理器30與所述壓力感測器25、所述第一位移感測器26、所述第一溫度感測器27及所述速度感測器28通訊連接,適用於依據與所述壓力感 測器25、所述第一位移感測器26、所述第一溫度感測器27及所述速度感測器28偵測的資料設定線切割製程程式,以對線切割製程進行控制。 In another example, as shown in FIG. 4, the wire cutting system further includes a processor 30, the processor 30 and the pressure sensor 25, the first displacement sensor 26, the first A temperature sensor 27 and the speed sensor 28 are communicatively connected, and are suitable for being connected with the pressure sensor 25, the first displacement sensor 26, the first temperature sensor 27, and the sensor. The data detected by the speed sensor 28 sets a wire cutting process program to control the wire cutting process.
本發明的線切割系統透過增設所述壓力感測器25、所述第一位移感測器26、所述第一溫度感測器27及所述速度感測器28,可以即時偵測所述待切割晶錠36對所述切割線22的壓力、所述待切割晶錠36的運動及位置偏移、所述待切割晶錠36與所述切割線22接觸區域的溫度及所述切割線22的運動速度,使用者可以透過所述處理器30根據偵測的上述資料調整設定線切割製程程式,以對線切割製程進行控制,從而改善切割得到的晶圓表面的形貌,避免切割得到的晶圓表面存在奈米拓撲結構形貌。 The wire cutting system of the present invention can detect the pressure sensor 25, the first displacement sensor 26, the first temperature sensor 27, and the speed sensor 28 in real time by adding the same. The pressure of the ingot to be cut 36 on the cutting line 22, the movement and positional deviation of the ingot to be cut 36, the temperature of the area where the ingot to be cut 36 contacts the cutting line 22, and the cutting line The moving speed of 22, the user can adjust the wire cutting process program according to the detected data through the processor 30, so as to control the wire cutting process, thereby improving the morphology of the wafer surface obtained by cutting and avoiding cutting. The nanometer topological morphology exists on the surface of the wafer.
作為示例,請參閱圖5,所述切割線驅動裝置包括切割線導軌23,所述切割線22繞置於所述切割線導軌23上;所述切割線導軌23的數量為若干個,若干個所述切割線導軌23位於所述待切割晶錠36運動路徑的兩側,適用於驅動所述切割線22運動以對所述待切割晶錠36進行線切割。 As an example, referring to FIG. 5, the cutting line driving device includes a cutting line guide 23, and the cutting line 22 is wound on the cutting line guide 23. The number of the cutting line guides 23 is several The cutting wire guides 23 are located on both sides of the moving path of the ingot 36 to be cut, and are suitable for driving the cutting line 22 to move to perform wire cutting on the ingot 36 to be cut.
作為示例,請繼續參閱圖5,所述線切割系統還包括:固定部24,所述固定部24位於各所述切割線導軌23的兩端;所述固定部24內設有第一冷卻管路(未示出),所述固定部24表面設有與所述第一冷卻管路相連接的第一進口241及第一出口242;所述切割線導軌23內設有第二冷卻管路(未示出),所述切割線導軌23端面設有與所述第二冷卻管路相連通的第二進口231及第二出口232;熱交換器31,所述熱交換器31與所述第一進口241、第一出口242、第二進口231及第二出口232相連接,適用於向所述第一冷卻管路及所述第二冷卻管路內提供冷卻液體;第二溫度感測器32,所述第二溫度感測器32位於所述切割線導軌23端面,並與所述資料記憶體29 相連接,適用於偵測所述切割線導軌23的溫度及流經所述切割線導軌23的冷卻液體的溫度,並將偵測的溫度資料存儲於所述資料記憶體29內;第三溫度感測器33,所述第三溫度感測器33位於所述固定部24表面,並與所述資料記憶體29相連接,適用於偵測所述固定部24的溫度及流經所述固定部24的冷卻液體的溫度,並將偵測的溫度資料存儲於所述資料記憶體29內;第二位移感測器34,所述第二位移感測器34位於所述切割線導軌23端面,並與所述資料記憶體29相連接,適用於偵測所述切割線導軌23的運動及軸向位移,並將偵測的資料存儲於所述資料記憶體29內;第三位移感測器35,所述第三位移感測器35位於所述固定部24表面,並與所述資料記憶體29相連接,適用於偵測所述固定部24的運動,並將偵測的資料存儲於所述資料記憶體29內;所述處理器30適用於提取所述資料記憶體29中存儲的所述壓力感測器25、所述第一位移感測器26、所述第一溫度感測器27、所述速度感測器28、所述第二溫度感測器32、所述第三溫度感測器33、所述第二位移感測器34及所述第三位移感測器35偵測的資料,並依據提取的資料設定線切割製程程式,以對線切割製程進行控制。當然,在其他示例中,若所述線切割系統不包括所述資料記憶體29,所述壓力感測器25、所述第一位移感測器26、所述第一溫度感測器27、所述速度感測器28、所述第二溫度感測器32、所述第三溫度感測器33、所述第二位移感測器34及所述第三位移感測器35偵測的資料直接傳輸於所述處理器30。 As an example, please continue to refer to FIG. 5, the wire cutting system further includes: a fixing portion 24, which is located at both ends of each of the cutting wire guides 23; and a first cooling pipe is provided in the fixing portion 24 (Not shown), a surface of the fixing portion 24 is provided with a first inlet 241 and a first outlet 242 connected to the first cooling pipeline; a second cooling pipeline is provided in the cutting line guide 23 (Not shown), an end surface of the cutting line guide 23 is provided with a second inlet 231 and a second outlet 232 which are in communication with the second cooling pipeline; a heat exchanger 31, and the heat exchanger 31 and the The first inlet 241, the first outlet 242, the second inlet 231, and the second outlet 232 are connected, and are suitable for providing a cooling liquid into the first cooling pipeline and the second cooling pipeline; a second temperature sensing Device 32, the second temperature sensor 32 is located on the end surface of the cutting line guide 23 and is connected to the data memory 29, and is suitable for detecting the temperature of the cutting line guide 23 and flowing through the cutting The temperature of the cooling liquid of the wire guide 23 and stores the detected temperature data in the data memory 29 The third temperature sensor 33 is located on the surface of the fixed portion 24 and is connected to the data memory 29. The third temperature sensor 33 is suitable for detecting the temperature and flow of the fixed portion 24. The temperature of the cooling liquid of the fixing part 24 and storing the detected temperature data in the data memory 29; a second displacement sensor 34, the second displacement sensor 34 is located on the cutting line The end surface of the guide rail 23 is connected to the data memory 29 and is suitable for detecting the movement and axial displacement of the cutting line guide rail 23 and storing the detected data in the data memory 29; third A displacement sensor 35, the third displacement sensor 35 is located on the surface of the fixed portion 24 and is connected to the data memory 29, and is suitable for detecting the movement of the fixed portion 24 and detecting The data is stored in the data memory 29; the processor 30 is adapted to extract the pressure sensor 25, the first displacement sensor 26, the first sensor stored in the data memory 29 A temperature sensor 27, the speed sensor 28, the second temperature sensor 32, the Three temperature sensor 33, the sensor 34 and the second displacement sensor 35 detects the third displacement information, and based on the extracted data program to set cutting process, cutting process in order to be controlled. Of course, in other examples, if the wire cutting system does not include the data memory 29, the pressure sensor 25, the first displacement sensor 26, the first temperature sensor 27, Detected by the speed sensor 28, the second temperature sensor 32, the third temperature sensor 33, the second displacement sensor 34, and the third displacement sensor 35 The data is transmitted directly to the processor 30.
綜上所述,本發明提供一種改善晶圓表面切割形貌的線切割系統,所述改善晶圓表面切割形貌的線切割系統包括:晶錠進給裝置、切割線及切割線驅動裝置;所述晶錠進給裝置適用於固定待切割晶錠,並驅 動所述待切割晶錠向所述切割線運動,所述切割線驅動裝置適用於驅動所述切割線運動,並對所述待切割晶錠進行線切割;還包括:壓力感測器,位於所述晶錠進給裝置上,適用於偵測所述待切割晶錠對所述切割線的壓力;第一位移感測器,位於所述晶錠進給裝置上,適用於偵測所述待切割晶錠的運動及位置偏移;第一溫度感測器,適用於偵測待切割晶錠與所述切割線接觸區域的溫度;速度感測器,適用於偵測所述切割線的運動速度。本發明的線切割系統通過增設壓力感測器、第一位移感測器、第一溫度感測器及速度感測器,可以即時偵測待切割晶錠對切割線的壓力、待切割晶錠的運動及位置偏移、待切割晶錠與切割線接觸區域的溫度及切割線的運動速度,使用者可以根據偵測的上述資料調整設定線切割製程程式,以對線切割製程進行控制,從而改善切割得到的晶圓表面的形貌,避免切割得到的晶圓表面存在奈米拓撲結構形貌。 In summary, the present invention provides a wire cutting system for improving the cutting surface morphology of a wafer surface. The wire cutting system for improving the cutting surface morphology of a wafer surface includes: an ingot feeding device, a cutting line, and a cutting line driving device; The ingot feeding device is suitable for fixing the ingot to be cut and driving the ingot to be cut to the cutting line, and the cutting line driving device is suitable for driving the cutting line to move the ingot to be cut. Cutting the ingot for wire cutting; further comprising: a pressure sensor located on the ingot feeding device, adapted to detect the pressure of the ingot to be cut on the cutting line; a first displacement sensor, It is located on the ingot feeding device and is suitable for detecting the movement and position deviation of the ingot to be cut. The first temperature sensor is suitable for detecting the contact area between the ingot to be cut and the cutting line. Temperature; speed sensor, adapted to detect the moving speed of the cutting line. By adding a pressure sensor, a first displacement sensor, a first temperature sensor and a speed sensor, the wire cutting system of the present invention can detect the pressure of the ingot to be cut on the cutting line and the ingot to be cut in real time. Movement and position deviation, the temperature of the contact area between the ingot to be cut and the cutting line, and the speed of the cutting line. The user can adjust and set the wire cutting process program based on the detected data to control the wire cutting process, thereby Improve the morphology of the wafer surface obtained by dicing, and avoid the existence of nano topological structure on the surface of the diced wafer.
上述實施例僅例示性說明本發明的原理及其功效,而非用於限制本發明。任何熟悉此技術的人士皆可在不違背本發明的精神及範疇下,對上述實施例進行修飾或改變。因此,舉凡所屬技術領域中具有通常知識者在未脫離本發明所揭示的精神與技術思想下所完成的一切等效修飾或改變,仍應由本發明的申請專利範圍所涵蓋。 The above-mentioned embodiments merely illustrate the principle of the present invention and its effects, but are not intended to limit the present invention. Anyone familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field to which they belong without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the scope of patent application of the present invention.
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| CN111906953B (en) * | 2020-08-04 | 2022-03-25 | 西安奕斯伟材料科技有限公司 | Cutting device |
| CN112372352B (en) * | 2020-11-03 | 2022-06-07 | 河北国鼎信检测技术服务有限公司 | Metallographic cutting equipment |
| CN115674472A (en) * | 2022-05-26 | 2023-02-03 | 长沙韵为科技有限公司 | Curved surface form cutting wire saw machine and cutting method |
| CN115847639B (en) * | 2022-12-19 | 2023-09-01 | 江苏茂硕新材料科技有限公司 | Temperature measuring device for diamond wire for cutting silicon wafer |
| CN119748671B (en) * | 2024-10-23 | 2026-01-20 | 杭州华航新材料科技有限公司 | Preparation method of semi-insulating silicon carbide substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002254284A (en) * | 2001-02-23 | 2002-09-10 | Nippei Toyama Corp | Wire saw |
| JP5072204B2 (en) * | 2005-08-31 | 2012-11-14 | 信越半導体株式会社 | Method and wire saw apparatus for improving nanotopography of wafer surface |
| US20130144421A1 (en) * | 2011-12-01 | 2013-06-06 | Memc Electronic Materials, Spa | Systems For Controlling Temperature Of Bearings In A Wire Saw |
| EP2777903B1 (en) * | 2013-03-15 | 2017-07-26 | Toyo Advanced Technologies Co., Ltd. | ingot feeding system and method |
| KR102218983B1 (en) * | 2014-05-19 | 2021-02-23 | 동우 화인켐 주식회사 | Method for processing a cutting part of glass substrate and apparatus for processing a cutting part of glass substrate |
| CN204869299U (en) * | 2015-07-10 | 2015-12-16 | 南通恒隆机械制造有限公司 | A control system for processing of silk saw |
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2016
- 2016-12-12 CN CN201611139742.8A patent/CN108608591A/en active Pending
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| Publication number | Publication date |
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| TWI656249B (en) | 2019-04-11 |
| CN108608591A (en) | 2018-10-02 |
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