TW201836102A - Device and method of manufacturing semiconductor device - Google Patents

Abstract

The invention provides a semiconductor device manufacturing device and a manufacturing method, which prevent a positional shift in a formal crimping step when manufacturing a semiconductor device by a temporary formal division process of a semiconductor wafer, and do not bring a semiconductor wafer other than a thermal crimping target. Adverse effects of heat. Specifically, a semiconductor device manufacturing apparatus and manufacturing method are provided, which include a transfer mechanism having a holding portion that partially holds a substrate, a function of moving the substrate from a temporary crimping portion to a formal crimping portion, And a function of moving the substrate from the formal crimping portion to the temporary crimping portion.

Description

Manufacturing device and manufacturing method of semiconductor device

The present invention relates to a manufacturing apparatus and a manufacturing method of a semiconductor device. More specifically, the present invention relates to a manufacturing apparatus and a manufacturing method for a semiconductor device that is thermally compression-bonded to a plate or another semiconductor wafer by a thermosetting adhesive, and is electrically connected and mechanically fixed.

As a process for mounting a plurality of semiconductor wafers on a substrate, a temporary formal division process is known, which is divided into the following steps: a temporary crimping step, as shown in FIG. 11 (a), on a bonding surface having a bump B On the side of the semiconductor wafer C provided with an unhardened thermosetting adhesive R, the semiconductor wafer C is aligned with the pad electrode E on the substrate W (Fig. 11 (b)) and temporarily crimped (Fig. 11 (c)); And a formal crimping step, in which the bump B is melted to be bonded to the pad electrode E, and the thermosetting adhesive R is hardened and mechanically fixed by heating and crimping (FIG. 11 (d)). Generally, compared with the time required for the temporary crimping step, the time required for the formal crimping step is longer, but in the temporary formal division process, a plurality of semiconductor wafers Ca in the temporary crimping state can be used (Fig. 11 (c) ) At the same time thermocompression bonding. Therefore, compared with a series of processes in which semiconductor wafers are arranged one by one at a fixed portion until thermocompression bonding, the working time can be shortened significantly. This temporary formal division process has conventionally been performed using the temporary crimping apparatus 200 and the formal crimping apparatus 300 illustrated in FIGS. 12 and 13. The temporary crimping device 200 temporarily bonds the semiconductor wafer C to the substrate W held by the bonding stage 201 that can be adjusted in the XYθ direction one by one by the temporary crimping unit 204. After the temporary crimping is completed, as shown in FIG. 14 (a) As shown in the figure, a semiconductor wafer Ca in a temporarily crimped state is arranged at a specific location. In addition, the formal crimping apparatus 300 thermally crimps the temporarily fixed semiconductor wafer Ca to the substrate W held by the bonding stage 301 whose position can be adjusted in the XYθ direction by a plurality of units through the formal crimping joint 304. In the example of FIG. 14 (b), the pressing surface Ab of the thermal compression bonding of the formal crimping contact is equivalent to four semiconductor wafers Ca (two each in the vertical and horizontal directions) in the temporarily crimped state, and four are thermally crimped simultaneously to complete Thermal compression bonding of the semiconductor wafer Cb. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2014-236021

[Problems to be Solved by the Invention] In the conventional temporary formal division process, as shown in FIG. 14 (a), after all semiconductor wafers to be temporarily pressure-bonded are arranged on the substrate W, the official pressing is performed as shown in FIG. 14 (b). However, the semiconductor wafer Ca in a temporarily crimped state which is adjacent to the semiconductor wafer subjected to full crimping is also heated. In particular, even when the substrate W is made of a material having a high thermal conductivity like a silicon wafer, the heat transfer through the substrate W cannot be ignored. In this way, when the semiconductor wafer Ca in a temporarily pressure-bonded state adjacent to the semiconductor wafer which should be thermally pressure-bonded is heated, the hardening of the thermosetting adhesive R imparted to the semiconductor wafer Ca progresses, which results in FIG. 11 (C ), The bump B and the pad electrode E may be fixed in an unbonded state. Therefore, various methods for preventing the temperature rise of the semiconductor wafer Ca in a temporary pressure-bonding state other than the semiconductor wafer that should be thermally-bonded in the formal pressure-bonding step are discussed. Among them, the method described in Patent Document 1 uses a mounting table that is capable of reciprocating between the temporary crimping section and the main crimping section, so that there is no temporary crimping state of the semiconductor wafer Ca in the portion adjacent to the pressing surface during the main crimping. Method, repeating temporary crimping and formal crimping. This method is an effective method for preventing unnecessary curing of the thermosetting adhesive R because there is no semiconductor wafer Ca in a temporarily crimped state adjacent to the pressing surface. An example of a device configuration for performing this method is shown in FIG. 15, and is composed of a temporary crimping section 402, a main crimping section 403, and a mounting table 404. The mounting table 404 is configured to be able to be placed on the temporary crimping section 402 while holding the substrate W. It moves to the main crimping part 403 (FIG. 16 (a) and FIG. 16 (b)). However, in the temporary crimping step, heating is performed until the thermosetting adhesive R is softened, and the pressure is applied one by one. In contrast, in the main crimping step, due to the heat curing resistance of the thermosetting resin, it is necessary to add a plurality of simultaneously. Therefore, the load applied to the substrate W and the mounting table holding the substrate is very different in the temporary crimping step and the formal crimping step. The mounting table used in the formal crimping step needs to have rigidity to withstand high loads. However, as shown in FIG. 16 (a) and FIG. 16 (b), when the mounting table 404 is movable, it is difficult to have sufficient rigidity. In the formal crimping step, deformation occurs on the surface of the mounting table, resulting in thermal compression bonding. The position of the semiconductor wafer Cb is shifted. In particular, as the substrate W becomes larger, the position shift amount cannot be ignored. The present invention has been made in view of the above problems, and an object thereof is to provide a semiconductor device manufacturing apparatus and manufacturing method, which includes a temporary crimping step including temporarily crimping a semiconductor wafer to a substrate via a thermosetting adhesive, and The temporary formal division process of the formal crimping step of the thermal crimping of the semiconductor wafer temporarily crimped on the substrate, when manufacturing a semiconductor device, can prevent the position shift in the formal crimping step, and will not affect semiconductors other than the target of thermal crimping. The wafer brings the adverse effects of heat. [Technical means to solve the problem] In order to solve the above problem, the invention of claim 1 is a semiconductor device manufacturing device, which electrically connects a bump formed on a semiconductor wafer and a pad electrode formed on a substrate, and The semiconductor wafer is fixed to the substrate, and includes a temporary crimping section, which includes a temporary crimping head for holding the semiconductor wafer, and a temporary crimping mounting table for holding the substrate, and temporarily crimps the semiconductor wafer. At a specific position on the substrate; a formal crimping section having: a head for formal crimping, which is thermally crimped to a semiconductor wafer temporarily crimped to the substrate; and a back support mounting table, which is formed from the substrate The back side supports the range of the thermal crimping of the above-mentioned formal crimping head, and is fixedly arranged to face the above-mentioned formal crimping head. The formal crimping part melts the bumps formed on the semiconductor wafer to form the substrates on the substrate. The pad electrodes are electrically connected, and the semiconductor wafer is fixed on the substrate; and a transfer mechanism having a portion for holding the Holding portions of the plate, from the substrate provided with the above-described temporarily-bonded portion is moved to the above-described functions of the main crimping unit and the substrate from above the main crimping portion to move the function of the temporary pressure-bonding portion. The invention according to claim 2 is the device for manufacturing a semiconductor device according to claim 1, wherein when the thermosetting adhesive is applied to the connection of the semiconductor wafer, the head for temporary compression bonding has a function of heating the thermosetting adhesive. At a temperature lower than the temperature at which the hardening starts, the head for formal crimping has a function of heating to a temperature at which the thermosetting resin is hardened. The invention of claim 3 is a semiconductor device manufacturing device according to claim 1 or claim 2, wherein the head for formal crimping is simultaneously thermally crimped to a plurality of semiconductor wafers temporarily crimped to the substrate. The invention of claim 4 is the semiconductor device manufacturing apparatus according to any one of claims 1 to 3, wherein a surface of the back support mounting table supporting the substrate is smaller than the substrate, and has a surface corresponding to the formal crimping head. shape. The invention of claim 5 is the semiconductor device manufacturing apparatus according to any one of claims 1 to 4, wherein the holding portion of the transfer mechanism of the transfer mechanism moves the substrate from the temporary crimping portion to the formal crimping portion at The substrate is also held in the formal crimping portion. The invention of claim 6 is a semiconductor device manufacturing apparatus according to any one of claims 1 to 5, wherein the semiconductor device has a plurality of the conveyance mechanisms. The invention according to claim 7 is the semiconductor device manufacturing apparatus according to any one of claims 1 to 6, wherein a surface of the mounting table for temporary compression bonding that holds the substrate is smaller than the substrate. The invention of claim 8 is a method for manufacturing a semiconductor device, which includes: a temporary crimping step for temporarily crimping a semiconductor wafer to a specific position on a substrate; and a formal crimping step for simultaneously thermally crimping a plurality of temporarily In the semiconductor wafer which is crimped to the substrate, in the temporary crimping step, the portion to be temporarily crimped and the portion not to be temporarily crimped are set in units of a pressing surface for performing the thermal crimping, and the above-mentioned formal crimping is performed. In the bonding step, a back support stage that supports the shape of the pressure surface to be subjected to the above-mentioned thermocompression bonding is used. The invention according to claim 9 is the method for manufacturing a semiconductor device according to claim 8, wherein when a thermosetting adhesive is provided to the connection of the semiconductor wafer, the thermosetting adhesive is heated in the temporary compression bonding step. At a temperature lower than the starting hardening temperature, in the above-mentioned main compression bonding step, heating is performed to a temperature at which the thermosetting resin is hardened. The invention of claim 10 is the method of manufacturing a semiconductor device according to claim 8 or claim 9, wherein, in the above-mentioned formal crimping step, the semiconductor wafer temporarily crimped to the substrate is thermally crimped, and then the substrate is placed on the substrate. When there is a case where the semiconductor wafer should be temporarily crimped, the substrate after the formal crimping step is returned to the temporary crimping step. [Effects of the Invention] According to the present invention, there is a temporary compression bonding step including temporarily crimping a semiconductor wafer to a substrate via a thermosetting adhesive, and a formal crimping step of thermally crimping a semiconductor wafer temporarily crimped to the substrate. The process is temporarily and formally divided. When manufacturing a semiconductor device, the position can be prevented from shifting during the formal crimping step, and it will not cause adverse thermal effects on semiconductor wafers other than the thermal crimping target.

Hereinafter, an example of an embodiment of the present invention will be described using drawings. FIG. 1 is a diagram showing a manufacturing apparatus of a semiconductor device of the present invention. As shown in FIGS. 11 (a) to 11 (c), a semiconductor device manufacturing device 1 has the following structure as a basic structure: a temporary crimping section 2 that temporarily crimps a semiconductor wafer C to a substrate W; and a formal crimping section 3 , Which heat-presses the temporarily-crimped semiconductor wafer Ca in a manner as shown in FIG. 11 (d); and a transfer mechanism 4 that enables the substrate W to be bidirectional between the temporary-crimping section 2 and the formal-crimping section 3 mobile. In addition, in FIG. 1, a part of the constituent elements obscures other constituent elements. Therefore, in the following description, a diagram in which a part of the constituent elements shown in FIG. 2 (the same applies to FIG. 3 and FIG. 4) is omitted as necessary for explanation. In the manufacturing apparatus 1 for a semiconductor device, the base 5 is a main structure common to the temporary crimping portion 2 and the formal crimping portion 3, but for convenience, the base 5 constituting the temporary crimping portion 2 is used for temporary crimping. The base 52 uses the base 5 constituting the main crimping section 3 as the base 53 for main crimping (FIG. 2). In FIG. 1, the direction from the temporary crimping portion 2 to the main crimping portion 3 is set as the X direction, the direction parallel to the surface of the substrate W and orthogonal to the X direction is set as the Y direction, and the surface of the substrate W The vertical direction is the Z direction, and the rotation direction with the Z direction as the axis is the θ direction. The temporary crimping unit 2 includes a temporary crimping base 52, a temporary crimping mounting table 21, a temporary crimping support frame 22, a temporary crimping unit 23, and a temporary crimping head 24, and a base for temporary crimping. The seat 52 supports the temporary crimping mounting table 21 and the temporary crimping support frame 22. The temporary crimping stage 21 is a person moving the XY plane while holding the substrate W. In the example shown in FIG. 2, the Y-direction movable portion 21 a is provided on the temporary crimping base 52 and the X-direction movable portion 21 b is provided on the Y-direction movable portion 21 a. 21b is provided with a configuration of a θ-direction movable portion 21c. The θ-direction movable portion 21c has a function of holding the substrate W by suction or the like. Here, in this embodiment, the θ-direction adjustment is provided on the temporary crimping mounting table 21 holding the substrate W, and may have a function of rotating the temporary crimping head 24 in the θ direction. The temporary crimping support frame 22 supports a temporary crimping unit 23, and the temporary crimping unit 23 moves a temporary crimping head 24 in the Z direction. The temporary crimping head 24 sucks and holds the semiconductor wafer C one by one, and transmits the driving force of the temporary crimping unit 23 to the semiconductor wafer C. In addition, a heater is built in the temporary crimping head 24, and the heating can be performed in a temperature range in which the thermosetting adhesive R provided to the semiconductor wafer C is softened. Although not shown, the temporary crimping unit 2 is preferably provided with an image recognition device. When the semiconductor wafer C and the fixed portion of the substrate W are aligned, the relative position of the semiconductor wafer C and the substrate W can be obtained by image recognition. In accordance with the position, the temporary crimping mounting table 21 may be moved. The main crimping section 3 includes a base 53 for full crimping, a back support mounting table 31, a support frame 32 for full crimping, a unit 33 for full crimping, and a head 34 for full crimping, and a base 53 for full crimping. The back support stage 31 and the support frame 32 for full crimping are supported. The back support mounting table 31 supports the range of the main crimping head 34 from the lower surface of the substrate W (opposite to the surface where the semiconductor wafer Ca is temporarily crimped), and pressurizes it with the pressure of the main crimping head 34. The surface Ab is opposed to each other, and is fixed to the base 53 for formal crimping so as to support only the semiconductor wafer Ca in the pressing surface Ab. Preferably, the substrate W has a function of sucking and holding the substrate W on the surface of the back support mounting table 31. A heater for heating the substrate W may be incorporated. In addition, since the back support mounting table 31 is fixedly disposed on the base 53 for formal crimping, it is preferably formed of a rigid material. The formal crimping support frame 32 is for supporting the formal crimping unit 33, and the formal crimping unit 33 is for moving the formal crimping head 34 in the Z direction. The head 34 for the main crimping has a built-in heater. After the pressing surface Ab of the main crimping contact 34 comes into contact with the semiconductor wafer Ca temporarily fixed on the substrate W, the semiconductor wafer Ca is heated while conveying the driving of the unit 33 for the main crimping. Force and pressurize. The pressing surface Ab of the main crimping head 34 has a shape that simultaneously presses a plurality of temporarily fixed semiconductor wafers Ca. In this embodiment, the pressing surface Ab is the same as that shown in FIG. 14 (b), and the number of semiconductor wafers Ca temporarily crimped is four (two each in the vertical and horizontal directions), but it is not limited to this, and may be more or less than this. , It can also be four, but there are four in any of the vertical and horizontal directions. In addition, the heater built in the head 34 for full crimping has the ability to raise the temperature to a temperature at which the bumps B of the semiconductor wafer C are melted and the thermosetting adhesive R is hardened. The conveying mechanism 4 includes the following mechanism as a constituent element: a slide mounting table 41 which is configured to be slidable on a guide rail 40 that spans both the temporary crimping base 52 and the formal crimping base 53 in the Y direction. It can move in the X direction; the up-and-down driving section 42 is provided on the slide mounting table 41 to adjust the height; and the holding section 43 partially holds the substrate W. The conveying mechanism 4 has a function of holding the substrate W in the temporary crimping portion 2 in a state where the holding portion 43 partially holds the substrate W in a state where neither the temporary crimping mounting table 21 nor the back support mounting table 31 holds the substrate W. Moves to the main crimping portion 3. Therefore, if the temporary pressure-bonding mounting table 21 is in a state where the substrate W is released, the transfer mechanism 4 disposed near the temporary pressure-bonding mounting table 21 can raise the up-and-down driving portion 42 while the substrate 43 is held by the holding portion 43. The substrate W is moved to the main crimping section 3 along the slide rail 40 (from FIG. 3 (a) to FIG. 3 (b)). In the case where the substrate W is located in the official crimping section 3, after the back support mounting table 31 releases the holding of the substrate W, the vertical driving section 42 is raised, and the substrate W can also be moved to the temporary crimping section 2 along the slide rail 40 ( From Figure 3 (b) to Figure 3 (a)). Here, the holding portion 43 is preferably the substrate of the temporary crimping mounting table 21 when the substrate W is transferred from the temporary crimping mounting table 21 (and the substrate W is transferred to the temporary crimping mounting table 21). The holding surface (the θ-direction movable portion 1c) is smaller than the substrate W (at least the X-direction length is shorter). In this embodiment, the substrate W is shown in the shape of a corner plate. However, the substrate W is not limited to this. For example, a semiconductor wafer may have a dish shape. However, the portion where the semiconductor wafer C is temporarily crimped (and formally crimped) is not limited to the center portion of the substrate W, but may also reach the peripheral portion. Therefore, it is necessary to move the temporary crimping mounting table 21 over a wide range, but it is preferable to move the sliding mounting table 41 of the transport mechanism 4 synchronously with respect to the movement of the temporary crimping mounting table 21. By moving the temporary crimping mounting table 21, the sliding mounting table 41 of the conveying mechanism 4 is moved synchronously to prevent interference between the temporary crimping mounting table 21 and the conveying mechanism 4, and the holding portion 43 can also be maintained. In a portion where the substrate W can be held in a well-balanced manner. Fig. 4 (a) shows a state where the slide mounting table 41 also moves synchronously when the position of the substrate W of the temporary crimping section 2 is moved to the right as compared with Fig. 3 (a). FIG. 4 (b) shows a state where the substrate W is moved from this state to the state of the main crimping section 3. As shown in Fig. 3 (a) to Fig. 3 (b) and Fig. 4 (a) to Fig. 4 (b), the substrate W after the temporary crimping can also be linearly moved to the full crimping in the Y direction. The semiconductor wafer Ca to be temporarily pressure-bonded is arranged on the back support mounting table 31 (directly below the head 34 for full pressure-bonding). Hereinafter, an operation example of the semiconductor device manufacturing apparatus 1 will be described with reference to FIGS. 5 to 7 showing the arrangement status of the semiconductor wafer C on the substrate W. FIG. 5 (a) shows a substrate W. FIG. Although the substrate W shown in FIG. 5 (a) is shown as a grid, the grid is for the convenience of displaying the portion where the semiconductor wafer C can be arranged, and the same applies from FIG. 5 (b) to FIG. 7 (f). The substrate W in FIG. 5 (a) is first arranged on the temporary crimping mounting table 21 of the temporary crimping section 2, and the semiconductor wafers C are temporarily crimped one by one by the temporary crimping head 24. FIG. 5 (b) shows the state after the first temporary crimping step has been performed on the substrate W, and a semiconductor wafer Ca that has been temporarily crimped partially is arranged. As described above, the pressing surface Ab of the main crimping head 34 is a semiconductor wafer Ca in which two vertical and horizontal semiconductor wafers are simultaneously press-bonded temporarily. Therefore, the pressing surface Ab is divided into two temporarily crimped semiconductors. The portion of the wafer C and the portion where the semiconductor wafer C is not temporarily crimped. In addition, in FIG. 5 (b), the interval between the portions where the semiconductor wafer C is temporarily crimped is set to one amount of the pressing surface Ab, but the heat transfer property to the substrate W is high, and the thermosetting adhesive R When the initial hardening temperature is low, the interval may be further extended to be an integral multiple of the pressing surface Ab of the main crimping joint 34 (in this embodiment, there are 4 horizontal and vertical amounts, 6 volumes, and so on). As shown in FIG. 5 (b), after the first temporary crimping of the substrate W, the holding table 21 for temporary crimping releases the holding of the substrate W, and becomes the transfer mechanism 4 as shown in the state of FIG. 3 (a). The holding portion 43 holds the substrate W, and the up-and-down driving portion 42 lifts the substrate W from the substrate holding surface of the temporary pressing contact mounting table 21. After that, in order to perform the main crimping (the main crimping step), the slide mounting table 41 is moved on the slide rail 40 to the side of the main crimping section 3. Thereafter, the position of the slide mounting table 41 is adjusted so that the semiconductor wafer Ca (the arrangement unit pressurized by the head 34 for the main pressure bonding) in the temporarily crimped state is arranged on the back support mounting table 31. Thereafter, the lower surface of the substrate W is lowered to be in close contact with the upper surface of the back support mounting table 31 by the up-and-down driving section 42, and the substrate W is sucked and held by the back support mounting table 31, so that the head 34 for formal crimping is lowered. The semiconductor wafer Ca in the thermocompression bonding surface Ab becomes a semiconductor wafer Cb subjected to thermocompression bonding. In this state, the holding portion 43 maintains the holding of the substrate W. This is because the holding area of the back support mounting table 31 is limited to a part of the substrate W even if the back support mounting table 31 adsorbs and holds the substrate W, so it is necessary to ensure the stability of the substrate W. Next, the head 34 for formal crimping is raised and the suction from the back-supporting mounting table 31 is released. Then, the substrate W is moved by sliding the mounting table 41, and then the semiconductor wafer Ca that is temporarily press-bonded in a state of thermal compression bonding is arranged. The back support mounting table 31 is thermally crimped by a main crimping connector 34. After that, similarly, the position of the substrate W is moved by the slide mounting table 41, and as shown in FIG. 5 (b), all the semiconductor wafers Ca temporarily bonded to the substrate are set as the semiconductor wafers Cb which are thermally bonded. . As shown in FIG. 5 (c), all the semiconductor wafers Ca in the temporarily crimped state shown in FIG. 5 (b) are formally crimped. In addition, all the semiconductor wafers Ca temporarily crimped in FIG. 5 (b) are formally crimped in FIG. 5 (c), but when the temporarily crimped semiconductor wafer Ca has some incomplete conditions, conforming parts can also be avoided. It's officially crimped. In addition, the combination of the formal crimping head 34 and the back support mounting table 31 is common to all the formal crimping, so it is possible to suppress variations in the quality of the thermocompression bonding due to the position on the substrate W. In addition, since the back support mounting table 31 is fixed to the base 5 and has sufficient rigidity, the mounting table surface can also be prevented from being deformed and displaced during the formal crimping step. As shown in FIG. 5 (c), after the first official crimping, the holding of the substrate W by the back support temporary stage 31 is released, the holding portion 43 of the transport mechanism 4 holds the substrate W, and the upper and lower driving portions 42 make the substrate W is in a state where the substrate holding surface of the mounting table 31 is lifted from the back surface. After that, the slide mounting table 41 moves on the slide rail to the temporary crimping portion 2 side. After that, the substrate W is placed on the temporary crimping mounting table 21, and then the up-and-down driving section 42 is lowered, and the holding of the substrate W by the holding section 43 is released, so that the temporary crimping mounting table 21 holds the substrate W. Next, the temporary crimping stage 21 is moved, and the temporary crimping head 24 is temporarily crimped to the semiconductor wafer C one by one at a specific portion where the semiconductor wafer C is not arranged (second temporary crimping). Here, in the same manner as the first temporary crimping, the portion where the semiconductor wafer C is temporarily crimped and the portion where the semiconductor wafer C is not temporarily crimped are divided into two units each in the vertical and horizontal directions. FIG. 6 (d) illustrates a state after the second temporary compression bonding of the substrate W is performed. The substrate W in the state shown in FIG. 6 (d) is placed on the back support mounting table 31 as in FIG. 5 (b) to FIG. 5 (c), and is formally crimped. Here, there is a semiconductor wafer Cb which is adjacent to the semiconductor wafer Ca subjected to the second temporary compression bonding and is thermocompression bonded, but the thermosetting adhesive R of the semiconductor wafer Cb subjected to the thermal compression bonding is hardened, so it is not affected by the cause. The bad influence of the heat of the main crimp 34 heating. FIG. 6 (e) illustrates the substrate W after the second official crimping. After that, according to the operation described above, the third temporary crimping (Fig. 6 (f)), the third formal crimping (Fig. 7 (g)), and the fourth temporary crimping (Fig. 7 (h)) ), The fourth official crimping (FIG. 7 (i)), and the heating and crimping of the semiconductor wafer C to the entire surface of the substrate W is completed. According to the above process, in the formal crimping step, the semiconductor wafer Ca in the temporarily crimped state will not exist adjacent to each other. That is, it is possible to prevent the non-hardened thermosetting adhesive R from being hardened before the main crimping step, and effectively perform a high-quality formal crimping step. In this embodiment, the temporary compression bonding step and the main compression bonding step are repeated four times, and the thermal compression bonding to the entire surface of the substrate W is completed, but it is not limited to this. It is only necessary to select the optimal number of times according to the arrangement form of the semiconductor wafer C on the substrate W, the shape of the pressing surface Ab of the main crimp 34 (the number and arrangement of the semiconductor wafers that are simultaneously pressed), and the thermal conductivity of the substrate. In addition, in the formal crimping step, when the semiconductor wafer Ca that is temporarily crimped to the outside of the substrate W is formally crimped, the holding portion 43 may interfere with the back support mounting table 31. In this case, the conveyance mechanism may be controlled so as to change the position where the substrate W is held by the holding unit 43. For example, although the holding portion 43 in FIG. 8 has a fork shape, it is difficult to hold all the semiconductor wafers Ca temporarily in a temporarily crimped state without interference from the back support mounting table 31 and the holding portion 43 (FIG. 8 (a)), but by changing the position of the holding portion 43 as in FIG. 8 (b) or FIG. 8 (c), interference with the back support mounting table 31 can be avoided. When the position of the holding portion 43 is changed, as long as the substrate W is held by one of the two holding portions 43 and the back support mounting table 31, the holding of the substrate W by the other holding portion 43 is released. Just move it. In addition, as another embodiment of the present invention, it may be an apparatus including two sets of transfer mechanisms 4 as shown in FIG. 9 (a) and a transfer mechanism 4a and a transfer mechanism 4b. In the case of two sets of conveying mechanisms 4, the substrate W can be disposed and processed simultaneously in the temporary crimping section 2 and the formal crimping section 3, and a substrate W can also be moved from the temporary crimping section 2 to the formal crimping section. At the same time, the other substrate W is moved from the main crimping portion 3 to the temporary crimping portion 2 at the same time, so the standby time of the temporary crimping portion 2 and the main crimping portion 3 can be shortened, and productivity can be improved. In addition, in order to replace the substrate W between the temporary crimping portion 2 and the main crimping portion 3 simultaneously with each other, it is necessary to avoid interference of the respective substrates W. The structure for this is shown in Fig. 9 (b). FIG. 9 (b) is a view showing FIG. 9 (a) viewed from the Y direction, but the height of the holding portion 43 is changed in each group to avoid interference. However, when the substrate W is small, for example, as shown in FIG. 10 (a), a plurality of side portions of the substrate W may be held by one holding portion 43. If the transfer mechanism 4 has such a holding part 43, as shown in FIG. 4 (b), it is easy to provide two transfer mechanisms 4 like the transfer mechanism 4a. The description so far has been based on the premise that a thermosetting adhesive R is provided to the connection between the semiconductor wafer C and the substrate W, but the present invention is a case where the semiconductor wafer C is temporarily pressure-bonded to the substrate W to which the hardening adhesive R is not provided. Also effective. That is, in the formal crimping step, when there is a case where the semiconductor wafer Ca adjacent to the region where the formal crimping is performed, the heat of the formal crimping joint may soften / deform the bumps of the adjacent semiconductor wafer Ca, but the present invention China can also completely eliminate such concerns. The present invention can also be applied to so-called three-dimensional mounting in which semiconductor wafers having through electrodes are laminated. That is, when a semiconductor wafer C having electrodes on the top (non-bump surface) is used as the semiconductor wafer C, the state where the first-layer semiconductor wafer C is thermocompression-bonded as shown in FIG. 7 (i). Fig. 5 (a) similarly processes and repeatedly performs temporary crimping and formal crimping, so that thermal influence on adjacent wafers can also be prevented during three-dimensional mounting.

1‧‧‧Semiconductor device manufacturing device 1

2‧‧‧Temporary crimping department

3‧‧‧ formal crimping department

4‧‧‧ transfer agency

4a, 4b ‧‧‧ transfer agency

5‧‧‧ base

21‧‧‧Mounting table for temporary crimping

21a‧‧‧Y direction movable part

21b‧‧‧X direction movable part

21c‧‧‧θ-direction movable section

22‧‧‧Temporary Crimp Support Frame

23‧‧‧Temporary crimping unit

24‧‧‧Head for temporary crimping

31‧‧‧ Rear support mounting table

32‧‧‧ Official support frame for crimping

33‧‧‧formal crimping unit

34‧‧‧formal crimping head

40‧‧‧Sliding guide

41‧‧‧Sliding Mount

42‧‧‧Up and down drive section

43‧‧‧holding department

52‧‧‧ Base for temporary crimping

53‧‧‧ official crimp base

200‧‧‧Temporary crimping device

201‧‧‧Joint mounting table

204‧‧‧Temporary compression joint

300‧‧‧ formal crimping device

301‧‧‧Joint mounting table

304‧‧‧ formal crimping joint

402‧‧‧Temporary crimping department

403‧‧‧Formal crimping department

404‧‧‧mounting table

Ab‧‧‧Pressure surface

B‧‧‧ bump

C‧‧‧Semiconductor wafer

Ca‧‧‧ semiconductor wafer in a temporarily crimped state

Cb‧‧‧Semiconductor wafer by thermocompression bonding

E‧‧‧pad electrode

R‧‧‧thermosetting adhesive

W‧‧‧ substrate

X, Y, Z, θ‧‧‧ directions

FIG. 1 is a schematic diagram showing a configuration of a manufacturing apparatus of a semiconductor device according to an embodiment of the present invention. FIG. 2 is a schematic diagram for explaining constituent elements of a semiconductor device manufacturing apparatus according to an embodiment of the present invention. Fig. 3 (a) is a diagram showing a state in which a transport mechanism holds a substrate with a temporary crimping portion in a manufacturing apparatus of a semiconductor device according to an embodiment of the present invention, and (b) shows a state in which the transport mechanism holds a substrate with a crimping portion; Diagram of the state. Fig. 4 (a) is a diagram showing another example of a state in which a transport mechanism holds a substrate with a temporary crimping section in a manufacturing apparatus of a semiconductor device according to an embodiment of the present invention, and (b) is a diagram illustrating the transport mechanism with formal crimping A diagram of another example of the state where the substrate is held by the part. Fig. 5 (a) is a diagram showing a substrate used in one embodiment of the present invention, (b) is a diagram illustrating a state where the substrate is temporarily crimped for the first time, and (c) is a diagram illustrating the temporary crimping The following figure shows the state after the semiconductor substrate is formally crimped. FIG. 6 (d) is a diagram illustrating a state in which the second temporary compression bonding is performed on a substrate used in an embodiment of the present invention, and (e) is a state in which the semiconductor wafer after the temporary compression bonding is formally bonded. In the figure, (f) is a diagram illustrating a state in which the substrate is temporarily crimped for the third time according to an embodiment of the present invention. FIG. 7 (g) is a diagram illustrating a state in which a semiconductor wafer subjected to the third temporary compression bonding is formally bonded to a substrate used in one embodiment of the present invention, and (h) illustrates an example used in one embodiment of the present invention. (I) is a diagram illustrating a state after the semiconductor wafer after the temporary crimping is formally crimped. FIG. 8 (a) is a diagram showing a state of holding a substrate in a formal crimping step of one embodiment of the present invention, (b) is a diagram showing a state of changing a holding position of a substrate in the formal crimping step, (c ) Is a diagram showing other states in which the holding position is changed. FIG. 9 (a) is a diagram illustrating a two-group transport mechanism according to another embodiment of the present invention, and (b) is a diagram illustrating a height relationship of the transport mechanism. FIG. 10 (a) is a schematic diagram illustrating the constituent elements of a semiconductor device manufacturing apparatus according to another embodiment of the present invention, and (b) is a constituent element of a semiconductor device manufacturing apparatus according to a modified example of the embodiment. The schematic diagram. 11 (a) is a cross-sectional view of a semiconductor wafer substrate having a semiconductor wafer provided with a thermosetting adhesive on a bump surface and a pad electrode, and (b) is a view showing alignment of the semiconductor wafer and the semiconductor wafer substrate (C) is a sectional view showing a state in which the semiconductor wafer is temporarily crimped onto the semiconductor wafer substrate, and (d) is a sectional view showing a state in which the semiconductor wafer is thermally crimped onto the semiconductor wafer substrate Cutaway view. FIG. 12 is a diagram showing an example of a temporary crimping device used in a temporary formal division process. FIG. 13 is a diagram showing an example of a formal crimping apparatus used for a temporary formal division process. FIG. 14 (a) is a diagram illustrating a substrate that is only temporarily crimped to the entire substrate in the temporary formal division process, and (b) is a diagram illustrating a state in which a plurality of semiconductor wafers temporarily crimped to the substrate are simultaneously thermally crimped. Illustration. FIG. 15 is a schematic diagram showing the configuration of a semiconductor device manufacturing apparatus that is well-known as a countermeasure for heating adjacent wafers in a temporary formal division process. FIG. 16 (a) is a diagram showing a position where a mounting table for holding a substrate in a temporarily crimped state in a manufacturing apparatus of a semiconductor device, which is a well-known semiconductor device manufacturing method, as a countermeasure for heating a neighboring wafer temporarily temporarily, is shown, and (b) is a view showing the mounting table at The figure of the position of the formal crimping state.

Claims (13)

A manufacturing device for a semiconductor device, which electrically connects a bump formed on a semiconductor wafer and a pad electrode formed on a substrate, and fixes the semiconductor wafer on the substrate, and includes: a temporary crimping section, It has a temporary crimping head that holds the semiconductor wafer, and a temporary crimping mounting table that holds the substrate, and temporarily crimps the semiconductor wafer to a specific position on the substrate; a formal crimping section, which has: A contacting head whose thermal compression bonding is temporarily crimped to the semiconductor wafer on the substrate; and a back support mounting table which supports the range of the thermal compression bonding of the formal crimping head from the back of the substrate to the above-mentioned range. Formal crimping is fixed in an opposing manner. The formal crimping portion melts the bumps formed on the semiconductor wafer and electrically connects with the pad electrodes formed on the substrate, and fixes the semiconductor wafer on the substrate; And a conveying mechanism having a holding portion that partially holds the substrate, and includes a mechanism for moving the substrate from the temporary crimping portion to the positive Crimping portions of the function, and the function of the substrate from said main crimping portion to move the crimping portion of the temporary. The manufacturing apparatus for a semiconductor device according to claim 1, wherein when the thermosetting adhesive is provided to the connection of the semiconductor wafer, the temporary pressure-bonding head has a temperature at which the thermosetting adhesive is heated to be lower than the start of curing. The function of temperature is that the above-mentioned main head for crimping has a function of heating to a temperature at which the thermosetting resin is hardened. For example, the manufacturing apparatus of a semiconductor device according to claim 1 or 2, wherein the above-mentioned formal crimping head is simultaneously thermally crimped to a plurality of semiconductor wafers which are temporarily crimped onto the substrate. The semiconductor device manufacturing apparatus according to any one of claims 1 to 3, wherein a surface of the back support mounting table supporting the substrate is smaller than the substrate and has a shape corresponding to the head for formal crimping. The semiconductor device manufacturing apparatus according to any one of claims 1 to 4, wherein the holding portion of the transport mechanism of the transfer mechanism that moves the substrate from the temporary crimping portion to the formal crimping portion is also included in the formal crimping portion. Hold the above substrate. The semiconductor device manufacturing apparatus according to any one of claims 1 to 5, further comprising a plurality of the above-mentioned transfer mechanisms. The semiconductor device manufacturing apparatus according to any one of claims 1 to 6, wherein a surface of the mounting table for temporary crimping, which holds the substrate, is smaller than the substrate. A method for manufacturing a semiconductor device, comprising: a temporary crimping step for temporarily crimping a semiconductor wafer to a specific position on a substrate; and a formal crimping step for thermally crimping the semiconductor wafer temporarily crimped to the substrate In the above-mentioned temporary crimping step, in a unit of a pressing surface for performing the above-mentioned thermal crimping, a part to be temporarily crimped and a part not to be temporarily crimped are set. In the above-mentioned formal crimping step, the support is used to perform the above-mentioned. The back surface of the shape of the compression surface of the thermocompression bonding supports the mounting table. The method for manufacturing a semiconductor device according to claim 8, wherein in the above-mentioned formal crimping step, the pressing surface is a shape in which a plurality of semiconductor wafers are pressed at the same time. For example, the method for manufacturing a semiconductor device according to claim 8 or 9, wherein, in the above-mentioned temporary crimping step, the locations where the temporary crimping of the one pressing surface is performed are arranged at intervals of an integer multiple of the pressing surface. . The method for manufacturing a semiconductor device according to any one of claims 8 to 10, wherein when the thermosetting adhesive is provided to the connection of the semiconductor wafer, the thermosetting adhesive is adhered in the temporary crimping step. The agent is heated to a temperature lower than the temperature at which the hardening is started, and is heated to a temperature at which the thermosetting resin is hardened in the above-mentioned main compression bonding step. The method for manufacturing a semiconductor device according to any one of claims 8 to 11, wherein in the above-mentioned formal crimping step, after thermal compression bonding of the semiconductor wafer temporarily crimped to the substrate, a temporary should be left on the substrate. When the portion of the semiconductor wafer is crimped, the substrate after the formal crimping step is returned to the temporary crimping step. The method for manufacturing a semiconductor device according to claim 12, wherein, while performing the above-mentioned formal crimping step, a temporary crimping step is performed on other substrates.