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TW201836002A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TW201836002A
TW201836002A TW107107976A TW107107976A TW201836002A TW 201836002 A TW201836002 A TW 201836002A TW 107107976 A TW107107976 A TW 107107976A TW 107107976 A TW107107976 A TW 107107976A TW 201836002 A TW201836002 A TW 201836002A
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substrate
liquid
chamber
unit
processing
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TW107107976A
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TWI660418B (en
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尾辻正幸
高橋光和
本庄一大
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日商斯庫林集團股份有限公司
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    • H10P72/0411
    • H10P52/00
    • H10P70/15
    • H10P70/20
    • H10P72/0431
    • H10P72/0448
    • H10P72/30
    • H10P72/3302
    • H10P95/90

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Abstract

This substrate processing device includes: a liquid processing unit that supplies a processing liquid to an outer surface of a substrate inside a processing chamber and forms a processing liquid film on the outer surface of the substrate; a solidifying unit that solidifies the processing liquid film inside a solidifying chamber and forms a solidified film on the outer surface of the substrate; a removal processing unit that supplies, to the outer surface of the substrate, a removing liquid for removing the solidified film inside a removal chamber; a main conveying unit that conveys the substrate into the processing chamber and conveys the substrate out of the removal chamber; and a local conveying unit that conveys the substrate out of the processing chamber and conveys the substrate into the solidifying chamber.

Description

基板處理裝置以及基板處理方法Substrate processing apparatus and substrate processing method

本發明是有關於一種用以對基板進行處理的裝置及方法。在成為處理的對象的基板中,例如包含半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、場發射顯示器(Field Emission Display,FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽電池用基板等。The present invention relates to an apparatus and method for processing a substrate. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for a disk, a substrate for a disk, and a magnetic substrate. A substrate for a optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, or the like.

在半導體裝置等的製造步驟中,會進行用以去除附著於基板的表面上的異物的洗滌處理。例如,專利文獻1揭示有一種基板洗滌系統,其執行如下步驟:對基板的主面供給包含揮發成分的成膜用處理液;藉由使揮發成分蒸發而使成膜用處理液固化或硬化而在基板的主面上形成膜;以及利用去除液去除基板主面上的膜。當成膜用處理液固化或硬化時會產生體積收縮,並且若被供給去除液則會藉由膜的溶脹而產生體積膨脹。當體積收縮及膨脹時拉伸力會對基板上的微粒起作用,使微粒自基板主面(包含圖案的表面)脫離。由此,可去除基板主面的微粒。In the manufacturing process of a semiconductor device or the like, a washing process for removing foreign matter adhering to the surface of the substrate is performed. For example, Patent Document 1 discloses a substrate washing system that performs a step of supplying a film forming treatment liquid containing a volatile component to a main surface of a substrate, and curing or curing the film forming treatment liquid by evaporating the volatile component. Forming a film on the main surface of the substrate; and removing the film on the main surface of the substrate with the removal liquid. When the film forming treatment liquid is cured or hardened, volume shrinkage occurs, and if the removal liquid is supplied, volume expansion occurs due to swelling of the film. When the volume shrinks and expands, the stretching force acts on the particles on the substrate, causing the particles to detach from the main surface of the substrate (the surface containing the pattern). Thereby, the particles on the main surface of the substrate can be removed.

在專利文獻1的圖14中,表示有包括第1處理部、第2處理部及第3處理部的基板洗滌裝置。將自載體取出的基板,藉由基板搬運裝置而搬入至第1處理部。第1處理部對基板供給面塗(top coat)液作為成膜用處理液。將經供給面塗液的基板,藉由所述基板搬運裝置而自第1處理部取出,並搬入至第3處理部。第3處理部藉由熱板(hot plate)而對基板進行加熱,使面塗液中的揮發成分揮發。由此,面塗液一面產生體積收縮,一面進行固化或硬化,從而形成面塗膜。將形成有面塗膜的基板,藉由所述基板搬運裝置而自第3處理部取出,搬入至第2處理部。第2處理部藉由對基板供給作為去除液的鹼性顯影液,而去除面塗膜。其後,在第2處理部中進行基板的洗滌,將所述洗滌後的基板,藉由所述基板搬運裝置而自第2處理部取出。將所述處理後的基板收容在載體上。 [現有技術文獻] [專利文獻]In FIG. 14 of Patent Document 1, a substrate washing apparatus including a first processing unit, a second processing unit, and a third processing unit is shown. The substrate taken out from the carrier is carried into the first processing unit by the substrate transfer device. The first processing unit supplies a top coat liquid to the substrate as a film forming processing liquid. The substrate coated with the supplied surface is taken out from the first processing unit by the substrate transfer device, and carried into the third processing unit. The third processing unit heats the substrate by a hot plate to volatilize volatile components in the top coating liquid. Thereby, the top coating liquid is solidified or hardened while being volume-contracted, thereby forming a top coat film. The substrate on which the top coat film is formed is taken out from the third processing unit by the substrate transfer device, and carried into the second processing unit. The second processing unit removes the top coat film by supplying an alkali developer as a removal liquid to the substrate. Thereafter, the substrate is washed in the second processing unit, and the washed substrate is taken out from the second processing unit by the substrate transfer device. The processed substrate is housed on a carrier. [Prior Art Document] [Patent Literature]

[專利文獻1]日本專利特開2015-62259號公報(圖14)[Patent Document 1] Japanese Patent Laid-Open Publication No. 2015-62259 (Fig. 14)

[發明所欲解決之課題] 在專利文獻1的現有技術中,相同的基板搬運裝置將未處理的基板搬入至第1處理部,將塗佈有成膜用處理液的基板自第1處理部搬運至第3處理部,將在第3處理部中受到加熱處理而形成有膜的基板自第3處理部搬運至第2處理部,然後將已結束第2處理部中的處理的基板自所述第2處理部搬出。[Problems to be Solved by the Invention] In the prior art of the patent document 1, the same substrate transfer device carries the unprocessed substrate into the first processing unit, and the substrate on which the film forming processing liquid is applied is applied from the first processing unit. The substrate is transported to the third processing unit, and the substrate on which the film is formed by the heat treatment in the third processing unit is transported from the third processing unit to the second processing unit, and the substrate that has finished the processing in the second processing unit is self-owned. The second processing unit is carried out.

第1處理部中的處理後的基板的表面已藉由未硬化的成膜用處理液而濡濕,故而所述成膜用處理液有可能附著在基板搬運裝置上。所述附著的處理液在其後會轉移至基板搬運裝置所保持的其他基板,從而污染所述基板。特別是處理液轉移至已結束處理的基板會破壞基板處理的品質。又,由於成膜用處理液的氣氛籠罩在藉由基板搬運裝置而搬運基板的空間內,故亦有可能產生所述氣氛對基板的不良影響。Since the surface of the processed substrate in the first processing unit is wetted by the unhardened film forming processing liquid, the film forming processing liquid may adhere to the substrate transfer device. The attached treatment liquid is thereafter transferred to other substrates held by the substrate transfer device to contaminate the substrate. In particular, transfer of the treatment liquid to the substrate that has been processed will destroy the quality of the substrate treatment. Further, since the atmosphere of the film forming processing liquid is enveloped in the space in which the substrate is transported by the substrate transfer device, there is a possibility that the atmosphere adversely affects the substrate.

因此,本發明的一個目的在於提供一種基板處理裝置及基板處理方法,已抑制用以在基板表面上形成固化膜的處理的影響波及其他基板。 [解決課題之手段]Accordingly, it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method which have suppressed the influence of a process for forming a cured film on a surface of a substrate from affecting other substrates. [Means for solving the problem]

本發明的一實施形態提供一種基板處理裝置,包括:液體處理單元,在處理室內對基板的表面供給處理液,在基板的表面上形成處理液膜;固化單元,在固化室內使所述處理液膜固化而在所述基板的表面上形成固化膜;去除處理單元,在去除室內將用以去除所述固化膜的去除液供給至所述基板的表面;主搬運單元,向所述處理室搬入基板,並自所述去除室搬出基板;以及局部搬運單元,自所述處理室搬出基板並向所述固化室搬入基板。According to an embodiment of the present invention, a substrate processing apparatus includes: a liquid processing unit that supplies a processing liquid to a surface of a substrate in a processing chamber to form a processing liquid film on a surface of the substrate; and a curing unit that causes the processing liquid in the curing chamber Forming a cured film on the surface of the substrate; removing the processing unit, supplying a removal liquid for removing the cured film to the surface of the substrate in the removal chamber; and moving the main transport unit into the processing chamber And a partial transfer unit that carries out the substrate from the processing chamber and carries the substrate into the curing chamber.

藉由所述構成,形成基板上的處理液膜後,將所述基板藉由局部搬運單元而搬入至固化室。因此,可避免主搬運單元被處理液污染,故可抑制或防止所述處理液轉移至其他基板。又,可抑制或防止處理液的氣氛籠罩在藉由主搬運單元而搬運基板的空間內,因此亦可避免處理液的氣氛對基板造成不良影響。如此一來,可提高基板處理品質。又,無論主搬運單元的運行狀態如何,均可將已結束處理室內的處理的基板迅速搬運至固化室。According to the above configuration, after the processing liquid film on the substrate is formed, the substrate is carried into the curing chamber by the partial transfer unit. Therefore, it is possible to prevent the main transport unit from being contaminated by the treatment liquid, so that the transfer of the treatment liquid to other substrates can be suppressed or prevented. Further, it is possible to suppress or prevent the atmosphere of the processing liquid from being enclosed in the space in which the substrate is transported by the main transport unit, and therefore it is possible to prevent the atmosphere of the processing liquid from adversely affecting the substrate. In this way, the substrate processing quality can be improved. Further, regardless of the operating state of the main transport unit, the substrate on which the processing in the processing chamber has been completed can be quickly transported to the curing chamber.

所述基板處理裝置亦可用以進行去除基板的表面的異物的洗滌處理。在基板的表面上處理液膜進行固化時會產生體積收縮。又,當為了去除在基板的表面上所形成的固化膜而供給去除液時,固化膜會進行溶脹,而產生體積膨脹。在所述體積收縮及膨脹時,拉伸力作用至基板表面的異物(微粒等),由此,可使基板表面的異物剝離。經剝離的異物可與固化膜一起被去除至基板外。The substrate processing apparatus may also be used to perform a washing process of removing foreign matter on the surface of the substrate. Volume shrinkage occurs when the liquid film is cured on the surface of the substrate for curing. Further, when the removal liquid is supplied to remove the cured film formed on the surface of the substrate, the cured film is swollen to cause volume expansion. When the volume is contracted and expanded, the tensile force acts on foreign matter (fine particles or the like) on the surface of the substrate, whereby foreign matter on the surface of the substrate can be peeled off. The peeled foreign matter can be removed to the outside of the substrate together with the cured film.

在本發明的一實施形態中,所述固化單元包括對所述基板進行加熱的加熱單元。由此,可對基板上的處理液膜進行加熱並加以固化。In an embodiment of the invention, the curing unit includes a heating unit that heats the substrate. Thereby, the processing liquid film on the substrate can be heated and cured.

更具體而言,所述固化單元亦可包括保持基板的基板保持單元、及對保持於所述基板保持單元上的基板進行加熱的所述加熱單元。More specifically, the curing unit may further include a substrate holding unit that holds the substrate, and the heating unit that heats the substrate held on the substrate holding unit.

所述固化單元亦可包括將固化室內減壓至低於大氣壓的壓力的減壓單元。又,所述固化單元亦可包括對固化室內進行換氣的換氣單元。換氣單元亦可包括對固化室內供給低濕度氣體(例如惰性氣體)的低濕度氣體供給單元。由此,可促進基板上的成膜處理液膜的乾燥,從而促進其固化。The curing unit may also include a decompression unit that decompresses the curing chamber to a pressure below atmospheric pressure. Further, the curing unit may further include a ventilation unit that ventilates the curing chamber. The ventilation unit may also include a low-humidity gas supply unit that supplies a low-humidity gas (for example, an inert gas) to the curing chamber. Thereby, drying of the film formation processing liquid film on the substrate can be promoted, and the curing thereof can be promoted.

在本發明的一實施形態中,所述主搬運單元配置在主搬運室內,所述局部搬運單元配置在與所述主搬運室隔離的局部搬運室內。由此,可更確實地抑制或防止處理液的氣氛籠罩在主搬運室內,故可抑制或防止藉由主搬運單元而搬運的基板受到處理液的氣氛的影響。In one embodiment of the present invention, the main transport unit is disposed in a main transport chamber, and the partial transport unit is disposed in a partial transport chamber that is isolated from the main transport chamber. Thereby, it is possible to more reliably suppress or prevent the atmosphere of the processing liquid from being enveloped in the main transfer chamber, so that it is possible to suppress or prevent the substrate conveyed by the main transport unit from being affected by the atmosphere of the processing liquid.

在本發明的一實施形態中,所述局部搬運單元進而自所述固化室搬出基板,並向所述去除室搬入基板。由此,可避免主搬運單元自固化處理後的基板受到影響。例如,即使固化處理後的基板處於高溫,亦可避免主搬運單元蓄熱。In one embodiment of the present invention, the partial transport unit further carries out the substrate from the curing chamber and carries the substrate into the removal chamber. Thereby, it is possible to prevent the substrate of the main transport unit from being self-cured. For example, even if the substrate after the curing process is at a high temperature, heat storage of the main transport unit can be avoided.

在所述專利文獻1的構成中,由於在第3處理部中基板被加熱,故而藉由基板搬運裝置保持所述經加熱的基板,而有可能使熱蓄積在基板搬運裝置中。經蓄積的熱傳遞至基板搬運裝置所搬運的基板,故而由此,有可能對基板造成不良影響。In the configuration of Patent Document 1, since the substrate is heated in the third processing unit, the heated substrate is held by the substrate transfer device, and heat may be accumulated in the substrate transfer device. Since the accumulated heat is transferred to the substrate conveyed by the substrate transfer device, there is a possibility that the substrate is adversely affected.

因此,藉由利用局部搬運單元自固化室向去除室搬運基板,可避免熱蓄積於主搬運單元中,故可抑制熱對主搬運單元所搬運的基板的影響。Therefore, by transferring the substrate to the removal chamber from the curing chamber by the partial transfer unit, heat can be prevented from being accumulated in the main transfer unit, so that the influence of heat on the substrate conveyed by the main transfer unit can be suppressed.

在本發明的一實施形態中,所述局部搬運單元包括自所述處理室搬出基板並向所述固化室搬入基板的第1搬運臂、以及自所述固化室搬出基板並向所述去除室搬入基板的第2搬運臂。In one embodiment of the present invention, the partial transport unit includes a first transport arm that carries out a substrate from the processing chamber, carries the substrate into the curing chamber, and carries out the substrate from the curing chamber to the removal chamber. Move into the second transfer arm of the substrate.

藉由所述構成,藉由第1搬運臂來搬運形成有處理液膜的基板,藉由第2搬運臂來搬運形成有固化膜的基板。因此,即使在第1搬運臂上附著有處理液,亦可抑制或防止所述處理液轉移至固化處理後的基板。According to this configuration, the substrate on which the liquid film is formed is transported by the first transport arm, and the substrate on which the cured film is formed is transported by the second transport arm. Therefore, even if the treatment liquid adheres to the first transfer arm, the transfer of the treatment liquid to the substrate after the curing treatment can be suppressed or prevented.

第2搬運臂較佳為配置在較第1搬運臂更上方的位置,由此,可抑制或防止藉由第1搬運臂而保持的基板上的處理液附著在第2搬運臂上。It is preferable that the second transfer arm is disposed above the first transfer arm, thereby preventing or preventing the processing liquid on the substrate held by the first transfer arm from adhering to the second transfer arm.

在本發明的一實施形態中,所述液體處理單元包括水平地保持基板的基板保持單元、及對保持於所述基板保持單元上的基板噴出處理液的處理液噴出單元。藉由所述構成,可使處理液在水平地保持著的基板上蔓延,從而形成覆蓋基板的表面的處理液膜。In one embodiment of the present invention, the liquid processing unit includes a substrate holding unit that horizontally holds the substrate, and a processing liquid ejecting unit that ejects the processing liquid to the substrate held by the substrate holding unit. According to this configuration, the treatment liquid can be spread on the substrate held horizontally, thereby forming a treatment liquid film covering the surface of the substrate.

在本發明的一實施形態中,所述處理室與所述去除室為相同的室。即,處理液及去除室既可為不同的室,亦可為相同的室。In an embodiment of the invention, the processing chamber and the removal chamber are the same chamber. That is, the treatment liquid and the removal chamber may be different chambers or the same chamber.

在本發明的一實施形態中,所述局部搬運單元具有保持基板並通過局部搬運室的搬運臂,所述基板處理裝置進而包括設置在所述局部搬運室內,噴出對所述搬運臂進行洗滌的洗滌液的臂洗滌噴嘴。In one embodiment of the present invention, the partial transport unit includes a transport arm that holds a substrate and passes through a partial transport chamber, and the substrate processing apparatus further includes a discharge chamber that is disposed in the partial transfer chamber and that ejects the transport arm. The arm washing nozzle of the washing liquid.

藉由所述構成,可對局部搬運單元的搬運臂進行洗滌,故可使搬運臂保持在潔淨的狀態。由此,可避免處理液的污染蓄積於搬運臂,從而可一面抑制處理液所引起的污染,一面搬運基板。而且,搬運臂的洗滌是在局部搬運室內進行,故可抑制或防止洗滌液或處理液的影響波及藉由主搬運單元而搬運的基板。According to this configuration, the transport arm of the partial transport unit can be washed, so that the transport arm can be kept in a clean state. Thereby, it is possible to prevent the contamination of the treatment liquid from being accumulated in the transfer arm, and it is possible to convey the substrate while suppressing the contamination caused by the treatment liquid. Further, since the washing of the transfer arm is performed in the partial transfer chamber, it is possible to suppress or prevent the influence of the washing liquid or the processing liquid from being transmitted to the substrate transported by the main transport unit.

在本發明的一實施形態中,所述局部搬運室包括接收所述洗滌液的底部、及排出所述底部所接收的洗滌液的排液單元。由此,可將洗滌搬運臂後的洗滌液排出至局部搬運室外,故可使局部搬運室內的氣氛保持潔淨。由此,可進一步抑制處理液氣氛對基板的影響。In an embodiment of the invention, the partial transfer chamber includes a liquid discharge unit that receives the bottom of the washing liquid and discharges the washing liquid received by the bottom portion. Thereby, since the washing liquid after washing the conveyance arm can be discharged to the partial conveyance chamber, the atmosphere in the partial conveyance chamber can be kept clean. Thereby, the influence of the processing liquid atmosphere on the substrate can be further suppressed.

在本發明的一實施形態中,所述局部搬運單元具有保持基板的搬運臂,所述基板處理裝置進而包括設置在所述搬運臂上,噴出用以洗滌所述搬運臂的洗滌液的臂洗滌噴嘴。藉由所述構成,藉由自設置在搬運臂上的臂洗滌噴嘴噴出洗滌液,可確實地洗滌搬運臂。因此,可避免處理液的污染蓄積在搬運臂上,從而可一面抑制處理液所引起的污染,一面搬運基板。又,可抑制或防止洗滌液或處理液的影響波及藉由主搬運單元而搬運的基板。In one embodiment of the present invention, the partial transport unit has a transport arm that holds a substrate, and the substrate processing apparatus further includes an arm wash that is disposed on the transport arm to eject a washing liquid for washing the transport arm. nozzle. According to this configuration, the conveyance arm can be reliably washed by ejecting the washing liquid from the arm washing nozzle provided on the conveyance arm. Therefore, contamination of the treatment liquid can be prevented from being accumulated on the transfer arm, and the substrate can be transported while suppressing contamination by the treatment liquid. Further, it is possible to suppress or prevent the influence of the washing liquid or the processing liquid from affecting the substrate conveyed by the main transport unit.

在本發明的一實施形態中,所述局部搬運單元具有保持基板並通過局部搬運室的搬運臂,所述基板處理裝置進而包括:臂洗滌室,與所述局部搬運室鄰接而設置;臂洗滌噴嘴,配置在所述臂洗滌室內,噴出用以洗滌所述搬運臂的洗滌液;以及減壓單元,使所述臂洗滌室內減壓至低於大氣壓的壓力而使所述搬運臂乾燥。In one embodiment of the present invention, the partial transport unit has a transport arm that holds a substrate and passes through a partial transport chamber, and the substrate processing apparatus further includes an arm washing chamber disposed adjacent to the partial transport chamber; a nozzle disposed in the arm washing chamber to eject a washing liquid for washing the conveying arm, and a decompression unit for decompressing the arm washing chamber to a pressure lower than atmospheric pressure to dry the conveying arm.

藉由所述構成,與局部搬運室鄰接而設置有臂洗滌室,故當局部搬運單元未搬運基板時,可在臂洗滌室內洗滌搬運臂。由於在臂洗滌室內配置有臂洗滌噴嘴,故可一面抑制洗滌液進入至局部搬運室內,一面洗滌搬運臂。由此,可抑制洗滌液對基板的影響。又,藉由對臂洗滌室進行減壓,可使藉由洗滌液而洗滌後的搬運臂迅速乾燥。According to this configuration, the arm washing chamber is provided adjacent to the partial transfer chamber. Therefore, when the partial transport unit does not transport the substrate, the transport arm can be washed in the arm washing chamber. Since the arm washing nozzle is disposed in the arm washing chamber, the transfer arm can be washed while preventing the washing liquid from entering the partial transfer chamber. Thereby, the influence of the washing liquid on the substrate can be suppressed. Further, by depressurizing the arm washing chamber, the transfer arm washed by the washing liquid can be quickly dried.

在本發明的一實施形態中,所述去除處理單元包括在所述去除室內水平地保持基板的基板保持單元、及對保持於所述基板保持單元上的基板噴出去除液的去除液噴出單元。藉由所述構成,對水平地保持著的基板供給去除液,故可使去除液容易地遍布於基板表面上,從而有效率地進行固化膜的去除處理。In one embodiment of the present invention, the removal processing unit includes a substrate holding unit that horizontally holds the substrate in the removal chamber, and a removal liquid discharge unit that discharges the removal liquid to the substrate held by the substrate holding unit. According to this configuration, since the removal liquid is supplied to the substrate held horizontally, the removal liquid can be easily spread over the surface of the substrate, and the removal process of the cured film can be efficiently performed.

本發明的一實施形態提供一種基板處理方法,包括:處理液膜形成步驟,對基板的表面在處理室內供給處理液,在基板的表面上形成處理液膜;第1局部搬運步驟,在所述處理液膜形成步驟之後,將所述基板搬運至固化室;固化膜形成步驟,在所述固化室內使所述處理液膜固化而在所述基板的表面上形成固化膜;第2局部搬運步驟,在所述固化膜形成步驟之後,將所述基板搬運至去除室;去除處理步驟,在所述去除室內將用以去除所述固化膜的去除液供給至所述基板的表面;以及主搬運步驟,藉由主搬運單元,向所述處理室搬入基板,並自所述去除室搬出基板。An embodiment of the present invention provides a substrate processing method including: a processing liquid film forming step of supplying a processing liquid to a surface of a substrate in a processing chamber to form a processing liquid film on a surface of the substrate; and a first partial conveying step in the After the liquid film forming step, the substrate is transported to a curing chamber; a cured film forming step is performed to cure the processed liquid film in the curing chamber to form a cured film on the surface of the substrate; and a second partial transport step After the solidified film forming step, the substrate is transported to the removal chamber; a removal processing step is performed in which the removal liquid for removing the cured film is supplied to the surface of the substrate; and the main handling In the step, the substrate is carried into the processing chamber by the main transport unit, and the substrate is carried out from the removal chamber.

在本發明的一實施形態中,所述固化膜形成步驟包括藉由加熱單元對所述基板進行加熱的加熱步驟。In an embodiment of the invention, the cured film forming step includes a heating step of heating the substrate by a heating unit.

在本發明的一實施形態中,在所述主搬運步驟中通過主搬運室而搬運所述基板,在所述第1局部搬運步驟中,通過與所述主搬運室隔離的局部搬運室而搬運所述基板。In one embodiment of the present invention, the substrate is transported by the main transport chamber in the main transport step, and is transported by a partial transport chamber that is isolated from the main transport chamber in the first partial transport step. The substrate.

在本發明的一實施形態中,藉由共同的局部搬運單元來執行所述第1局部搬運步驟及所述第2局部搬運步驟。In an embodiment of the present invention, the first partial transport step and the second partial transport step are performed by a common local transport unit.

在本發明的一實施形態中,藉由所述局部搬運單元的第1搬運臂來進行所述第1局部搬運步驟,藉由所述局部搬運單元的第2搬運臂來進行所述第2局部搬運步驟。In one embodiment of the present invention, the first partial transporting step is performed by the first transport arm of the partial transport unit, and the second partial transport arm of the local transport unit performs the second partial transport Handling steps.

本發明的一實施形態的方法進而包括對所述局部搬運單元的搬運臂供給洗滌液的臂洗滌步驟。A method according to an embodiment of the present invention further includes an arm washing step of supplying a washing liquid to a conveying arm of the partial conveying unit.

在本發明的一實施形態中,所述處理室及所述去除室為共同的室。In an embodiment of the invention, the processing chamber and the removal chamber are common chambers.

在本發明的一實施形態中,在所述處理液膜形成步驟之前,執行對基板進行洗滌的洗滌步驟。In an embodiment of the invention, the washing step of washing the substrate is performed before the processing liquid film forming step.

本發明中的所述或進而其他目的、特徵及效果是藉由以下參照隨附圖式而描述的實施形態的說明來闡明。The above and other objects, features, and advantages of the present invention will be apparent from the description of the embodiments described herein.

以下,參照隨附圖式,對本發明的實施形態進行詳細說明。Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[第1實施形態] 圖1A是用以說明本發明的第1實施形態的基板處理裝置1的構成的俯視圖,圖1B是其立面圖。基板處理裝置1包括載體保持部2、索引機器人(indexer robot)IR、多個液體處理單元M11~液體處理單元M14、液體處理單元M21~液體處理單元M24(統稱時稱為「液體處理單元M」)、多個固化單元D11~固化單元D14、固化單元D21~固化單元D24(統稱時稱為「固化單元D」)、主搬運機器人CR、以及局部搬運機器人LR11~局部搬運機器人LR14、局部搬運機器人LR21~局部搬運機器人LR24(統稱時稱為「局部搬運機器人LR」)。主搬運機器人CR為主搬運單元的一例,局部搬運機器人LR為局部搬運單元的一例。[First Embodiment] Fig. 1A is a plan view showing a configuration of a substrate processing apparatus 1 according to a first embodiment of the present invention, and Fig. 1B is an elevational view thereof. The substrate processing apparatus 1 includes a carrier holding unit 2, an indexer robot IR, a plurality of liquid processing units M11 to M14, and a liquid processing unit M21 to a liquid processing unit M24 (collectively referred to as "liquid processing unit M" a plurality of curing units D11 to D14, curing unit D21 to curing unit D24 (collectively referred to as "curing unit D"), main transport robot CR, and local transport robot LR11 to local transport robot LR14, local transport robot LR21 to local transport robot LR24 (collectively referred to as "partial transport robot LR"). The main transport robot CR is an example of a main transport unit, and the local transport robot LR is an example of a local transport unit.

載體保持部2保持著以積層狀態保持多塊基板W的基板容器即載體3。在本實施形態中,載體保持部2是可保持多個載體3而構成。索引機器人IR進入至保持於載體保持部2上的載體3而取放基板W,並且與主搬運機器人CR之間進行基板W的交接。The carrier holding portion 2 holds the carrier 3, which is a substrate container that holds a plurality of substrates W in a laminated state. In the present embodiment, the carrier holding portion 2 is configured to hold a plurality of carriers 3. The index robot IR enters the carrier 3 held by the carrier holding portion 2 to pick up and place the substrate W, and transfers the substrate W to and from the main transport robot CR.

多個液體處理單元M及多個固化單元D在本實施形態中,是以形成多層構造(在本實施形態中為兩層構造)的方式立體地配置。具體而言,如圖1A所示,俯視時,在自載體保持部2呈直線狀延伸的主搬運室5內配置有主搬運機器人CR,在主搬運室5的兩側沿主搬運室5各配置有兩個積層單元組G1、積層單元組G2及積層單元組G3、積層單元組G4。由此,俯視時,在主搬運機器人CR的周圍配置有4個積層單元組G1~積層單元組G4。In the present embodiment, the plurality of liquid processing units M and the plurality of curing units D are three-dimensionally arranged so as to form a multilayer structure (two-layer structure in the present embodiment). Specifically, as shown in FIG. 1A, in the plan view, the main transport robot CR is disposed in the main transport chamber 5 extending linearly from the carrier holding portion 2, and each side of the main transport chamber 5 is along the main transport chamber 5 Two stacked cell groups G1, a stacked cell group G2, a stacked cell group G3, and a stacked cell group G4 are disposed. Thereby, four laminated unit groups G1 to G4 are disposed around the main transport robot CR in plan view.

在基板處理裝置1的第1層S1及第2層S2中各配置有4個液體處理單元M11~液體處理單元M14、液體處理單元M21~液體處理單元M24,基板處理裝置1具備共計8個液體處理單元M。在第1層S1中,在主搬運室5的兩側沿主搬運室5各配置有兩個液體處理單元M11、液體處理單元M12及液體處理單元M13、液體處理單元M14。在該些4個液體處理單元M11~液體處理單元M14上分別配置有4個固化單元D11~固化單元D14。此外,在第2層S2中,在主搬運室5的兩側沿主搬運室5各配置有兩個液體處理單元M21、液體處理單元M22及液體處理單元M23、液體處理單元M24。在所述4個液體處理單元M21~液體處理單元M24上分別配置有4個固化單元D21~固化單元D24。一個液體處理單元M與配置於其上的固化單元D形成相對應的對。In the first layer S1 and the second layer S2 of the substrate processing apparatus 1, four liquid processing units M11 to M14 and a liquid processing unit M21 to a liquid processing unit M24 are disposed, and the substrate processing apparatus 1 has a total of eight liquids. Processing unit M. In the first layer S1, two liquid processing units M11, a liquid processing unit M12, a liquid processing unit M13, and a liquid processing unit M14 are disposed along the main transfer chamber 5 on both sides of the main transfer chamber 5. Four curing units D11 to D14 are disposed in each of the four liquid processing units M11 to M14. Further, in the second layer S2, two liquid processing units M21, a liquid processing unit M22, a liquid processing unit M23, and a liquid processing unit M24 are disposed along the main transfer chamber 5 on both sides of the main transfer chamber 5. Four curing units D21 to D24 are disposed on the four liquid processing units M21 to M24, respectively. A liquid processing unit M forms a corresponding pair with the curing unit D disposed thereon.

積層單元組G1是自下方起依次積層液體處理單元M11、固化單元D11、液體處理單元M21及固化單元D21而構成。積層單元組G2是自下方起依次積層液體處理單元M12、固化單元D12、液體處理單元M22及固化單元D22而構成。積層單元組G3是自下方起依次積層液體處理單元M13、固化單元D13、液體處理單元M23及固化單元D23而構成。積層單元組G4是自下方起依次積層液體處理單元M14、固化單元D14、液體處理單元M24及固化單元D24而構成。The buildup unit group G1 is configured by stacking a liquid processing unit M11, a curing unit D11, a liquid processing unit M21, and a curing unit D21 in this order from the bottom. The build-up unit group G2 is configured by stacking a liquid processing unit M12, a curing unit D12, a liquid processing unit M22, and a curing unit D22 in this order from the bottom. The buildup unit group G3 is configured by stacking a liquid processing unit M13, a curing unit D13, a liquid processing unit M23, and a curing unit D23 in this order from the bottom. The build-up unit group G4 is configured by stacking a liquid processing unit M14, a curing unit D14, a liquid processing unit M24, and a curing unit D24 in this order from the bottom.

主搬運機器人CR可進入至共計8個液體處理單元M遞交基板W,然後可與索引機器人IR之間交接基板W。主搬運機器人CR亦可構成為可進入至共計8個固化單元D取出基板W。The main transport robot CR can enter a total of eight liquid processing units M to deliver the substrate W, and then can exchange the substrate W with the index robot IR. The main transport robot CR may be configured to take in a total of eight curing units D to take out the substrate W.

局部搬運機器人LR在本實施形態中,在第1層S1中具備4個,在第2層S2中具備4個。更具體而言,俯視時,在第1層S1中,在主搬運室5的兩側各配置有兩個局部搬運機器人LR11、局部搬運機器人LR12及局部搬運機器人LR13、局部搬運機器人LR14。更進一步具體而言,在主搬運室5的一側,在第1層S1中,在載體保持部2與液體處理單元M11之間配置有一個局部搬運機器人LR11,在遠離載體保持部2之側的端部配置有另一個局部搬運機器人LR12。在主搬運室5的另一側的兩個局部搬運機器人LR13、局部搬運機器人LR14的配置亦是同樣。而且,第2層S2中的4個局部搬運機器人LR21、局部搬運機器人LR22及局部搬運機器人LR23、局部搬運機器人LR24亦是同樣地配置。局部搬運機器人LR11~局部搬運機器人LR14、局部搬運機器人LR21~局部搬運機器人LR24分別配置在局部搬運室C11~局部搬運室C14、局部搬運室C21~局部搬運室C24(統稱時稱為「局部搬運室C」)內。局部搬運室C形成有搬運空間,所述搬運空間被劃分成與主搬運室5分離(隔離)。In the present embodiment, the local transport robot LR includes four in the first layer S1 and four in the second layer S2. More specifically, in the first layer S1, two partial conveyance robots LR11, a partial conveyance robot LR12, a partial conveyance robot LR13, and a partial conveyance robot LR14 are disposed on both sides of the main conveyance chamber 5. More specifically, on the side of the main transfer chamber 5, in the first layer S1, a partial transfer robot LR11 is disposed between the carrier holding portion 2 and the liquid processing unit M11, on the side away from the carrier holding portion 2. The other end is provided with another partial handling robot LR12. The arrangement of the two partial transport robots LR13 and the local transport robot LR14 on the other side of the main transport chamber 5 is also the same. Further, the four partial transport robots LR21, the local transport robot LR22, the local transport robot LR23, and the local transport robot LR24 in the second layer S2 are also arranged in the same manner. The local transport robot LR11 to the local transport robot LR14 and the local transport robot LR21 to the local transport robot LR24 are disposed in the partial transport chamber C11 to the local transport chamber C14 and the partial transport chamber C21 to the local transport chamber C24 (collectively referred to as "partial transport chamber" C"). The partial transport chamber C is formed with a transport space that is divided into (separated) from the main transport chamber 5.

如此一來,針對各對的液體處理單元M及固化單元D,設置有一個局部搬運機器人LR。局部搬運機器人LR自所述液體處理單元M取出藉由液體處理單元M而處理後的基板W,搬運至所對應的固化單元D。In this way, a partial transfer robot LR is provided for each pair of liquid processing unit M and curing unit D. The local transport robot LR takes out the substrate W processed by the liquid processing unit M from the liquid processing unit M, and transports it to the corresponding curing unit D.

若對索引機器人IR、主搬運機器人CR及局部搬運機器人LR的動作例進行概述,則如下所述。An overview of the operation examples of the index robot IR, the main transport robot CR, and the local transport robot LR is as follows.

即,索引機器人IR自任一個載體3取出未處理的基板W,遞交至主搬運機器人CR。主搬運機器人CR將自索引機器人IR接收到的基板W搬入至任一個液體處理單元M。液體處理單元M執行對所搬入的基板W的處理。液體處理單元M具體而言,對基板表面實施前洗滌處理之後,將成膜用的處理液供給至基板W,將所述處理液的液膜形成於基板W的表面上。將經液體處理單元M處理的基板W,即,表面上形成有處理液膜的基板W藉由局部搬運機器人LR而搬出,並搬運至配置在其正上方的固化單元D。固化單元D使所搬入的基板W的表面的處理液膜固化而在基板W的表面上形成固化膜。將所述固化處理後的基板W藉由局部搬運機器人LR而搬運至液體處理單元M。液體處理單元M對基板W供給去除液,並去除基板W的表面的固化膜(去除處理),然後執行後洗滌處理。其後,利用主搬運機器人CR將基板W自液體處理單元M搬出。主搬運機器人CR將所述基板W遞交至索引機器人IR。索引機器人IR將所遞交的基板W收納於任一載體3。That is, the index robot IR takes out the unprocessed substrate W from any one of the carriers 3 and delivers it to the main transport robot CR. The main transport robot CR carries the substrate W received from the index robot IR to any one of the liquid processing units M. The liquid processing unit M performs processing on the loaded substrate W. Specifically, the liquid processing unit M applies a pre-washing treatment to the surface of the substrate, and then supplies the processing liquid for film formation to the substrate W, and forms a liquid film of the processing liquid on the surface of the substrate W. The substrate W processed by the liquid processing unit M, that is, the substrate W on which the processing liquid film is formed on the surface is carried out by the partial transfer robot LR, and transported to the curing unit D disposed directly above the substrate. The curing unit D cures the processed liquid film on the surface of the loaded substrate W to form a cured film on the surface of the substrate W. The substrate W after the curing process is transported to the liquid processing unit M by the partial transfer robot LR. The liquid processing unit M supplies the removal liquid to the substrate W, and removes the cured film of the surface of the substrate W (removal treatment), and then performs a post-washing process. Thereafter, the substrate W is carried out from the liquid processing unit M by the main transport robot CR. The main transport robot CR delivers the substrate W to the indexing robot IR. The index robot IR stores the delivered substrate W in any of the carriers 3.

藉由固化單元D而處理後的基板W亦可藉由主搬運機器人CR來搬運。即,主搬運機器人CR亦可將藉由固化單元D而處理後的基板W自固化單元D搬出,並搬入至任一液體處理單元M,以進行去除處理。此時,將成膜用的處理液供給至基板W的液體處理單元M與執行去除處理的液體處理單元M可能為不同的液體處理單元。The substrate W processed by the curing unit D can also be transported by the main transport robot CR. In other words, the main transport robot CR can carry out the substrate W processed by the curing unit D from the curing unit D, and carry it into any liquid processing unit M to perform the removal process. At this time, the liquid processing unit M that supplies the processing liquid for film formation to the substrate W and the liquid processing unit M that performs the removal processing may be different liquid processing units.

索引機器人IR亦可以如下方式運行:將未處理的基板W遞交至主搬運機器人CR,在緊跟在其前、緊接於其後或同時,自主搬運機器人CR接收處理完畢的基板W。同樣地,主搬運機器人CR亦可以如下方式運行:自索引機器人IR接收未處理的基板W,在緊跟在其前、緊接於其後或同時,將處理完畢的基板W遞交至索引機器人IR。此外,主搬運機器人CR亦可以如下方式運行:將未處理的基板W搬入至液體處理單元M,在緊接於其後或緊跟在其前自液體處理單元M搬出處理完畢的基板W(後洗滌處理後的基板W)。The indexing robot IR can also be operated in such a manner that the unprocessed substrate W is delivered to the main transport robot CR, and immediately before, immediately after or at the same time, the autonomous transport robot CR receives the processed substrate W. Similarly, the main transport robot CR can also be operated in such a manner that the unprocessed substrate W is received from the indexing robot IR, and the processed substrate W is delivered to the indexing robot IR immediately before, immediately after or at the same time. . Further, the main transport robot CR can also be operated in such a manner that the unprocessed substrate W is carried into the liquid processing unit M, and the processed substrate W is carried out from the liquid processing unit M immediately after or immediately before it (after The treated substrate W) is washed.

如上所述,在本實施形態中,是將一個固化單元D對應於一個液體處理單元M。然後,將液體處理單元M與固化單元D加以積層。此外,針對一個液體處理單元M及一個固化單元D的對,設置有一個局部搬運機器人LR,局部搬運機器人LR可進入至該些液體處理單元M及固化單元D。局部搬運機器人LR自液體處理單元M搬出已藉由液體處理單元M而處理的基板W,向與所述液體處理單元M相對應的固化單元D搬送,而搬入至所述固化單元D。具體而言,局部搬運機器人LR將自液體處理單元M取出的基板W向垂直方向(更具體而言為上方)搬運。又,局部搬運機器人LR將經固化單元D處理的基板W自固化單元D搬出,並向與所述固化單元D相對應的液體處理單元M搬運,而搬入至所述液體處理單元M。具體而言,局部搬運機器人LR將自固化單元D取出的基板W向垂直方向(更具體而言向下方)搬運。主搬運機器人CR將未處理的基板W搬入至液體處理單元M,且自液體處理單元M搬出處理後的基板W。As described above, in the present embodiment, one curing unit D corresponds to one liquid processing unit M. Then, the liquid processing unit M and the curing unit D are laminated. Furthermore, for a pair of a liquid processing unit M and a curing unit D, a partial handling robot LR is provided, to which the partial handling robot LR can enter. The local transport robot LR carries out the substrate W that has been processed by the liquid processing unit M from the liquid processing unit M, and transports it to the curing unit D corresponding to the liquid processing unit M, and carries it into the curing unit D. Specifically, the local transport robot LR transports the substrate W taken out from the liquid processing unit M in the vertical direction (more specifically, upward). Further, the local transport robot LR carries out the substrate W processed by the curing unit D from the curing unit D, transports it to the liquid processing unit M corresponding to the curing unit D, and carries it into the liquid processing unit M. Specifically, the local transport robot LR transports the substrate W taken out from the curing unit D in the vertical direction (more specifically, downward). The main transport robot CR carries the unprocessed substrate W into the liquid processing unit M, and carries out the processed substrate W from the liquid processing unit M.

液體處理單元M在所述實施形態中,亦具有作為去除處理單元的功能。The liquid processing unit M also has a function as a removal processing unit in the above embodiment.

圖2是用以說明液體處理單元M的構成例的圖解性的剖面圖。液體處理單元M包括處理室11。處理室11是在基板W的表面上形成處理液膜的處理室的一例,並且亦為去除基板W的表面的固化膜的去除室的一例。在處理室11內,設置有水平地保持基板W且可旋轉的作為基板保持單元的自旋夾盤(spin chuck)12、包圍自旋夾盤12的杯體(cup)13、藥液噴嘴14、作為處理液噴出單元的成膜處理液噴嘴15、作為去除液噴出單元的去除液噴嘴16、清洗噴嘴29及遮斷板19。自旋夾盤12是藉由作為基板旋轉單元的一例的馬達17而圍繞著鉛垂的旋轉軸線18旋轉。FIG. 2 is a schematic cross-sectional view for explaining a configuration example of the liquid processing unit M. The liquid processing unit M includes a processing chamber 11. The processing chamber 11 is an example of a processing chamber in which a processing liquid film is formed on the surface of the substrate W, and is also an example of a removal chamber for removing a cured film on the surface of the substrate W. In the processing chamber 11, a spin chuck 12 as a substrate holding unit that horizontally holds the substrate W and rotatably, a cup 13 surrounding the spin chuck 12, and a liquid medicine nozzle 14 are provided. The film forming processing liquid nozzle 15 as the processing liquid discharging unit, the removal liquid nozzle 16 as the removal liquid discharging unit, the cleaning nozzle 29, and the blocking plate 19. The spin chuck 12 is rotated around a vertical rotation axis 18 by a motor 17 as an example of a substrate rotation unit.

在藥液噴嘴14上,結合有藥液配管21。在藥液配管21的途中,插裝有使藥液通路開關的藥液閥22。對藥液配管21,自藥液供給源23供給藥液。作為藥液的示例,可舉出氫氟酸(hydrogen fluoride,HF)、氨過氧化氫水(ammonia peroxide mixture)(SC1)、鹽酸過氧化氫水(hydrochloric peroxide mixture)(SC2)、硫酸過氧化氫水(sulfuric peroxide mixture,SPM)、磷酸、硝氟酸、氟酸過氧化氫水(fluoric peroxide mixture,FPM)、氟酸臭氧水(fluoric ozone mixture,FOM)、氨臭氧水(ammonia ozone mixture,AOM)等。藥液噴嘴14亦可為可在保持於自旋夾盤12上的基板W的上方移動的移動噴嘴。又,圖2的藥液噴嘴14是與遮斷板19分開設置,藥液噴嘴亦可組裝至遮斷板19上。A chemical liquid pipe 21 is coupled to the chemical liquid nozzle 14. In the middle of the chemical solution pipe 21, a chemical liquid valve 22 for opening the chemical liquid passage switch is inserted. The chemical liquid supply pipe 23 supplies the chemical liquid to the chemical liquid supply pipe 23. Examples of the chemical solution include hydrogen fluoride (HF), ammonia peroxide mixture (SC1), hydrochloric peroxide mixture (SC2), and sulfuric acid peroxidation. Sulfuric peroxide mixture (SPM), phosphoric acid, nitric acid, fluorine peroxide mixture (FPM), fluorinated ozone mixture (FOM), ammonia ozone mixture (Ammonia ozone mixture, AOM) and so on. The chemical liquid nozzle 14 may also be a moving nozzle that is movable above the substrate W held on the spin chuck 12. Further, the chemical liquid nozzle 14 of Fig. 2 is provided separately from the blocking plate 19, and the chemical liquid nozzle can be assembled to the blocking plate 19.

在成膜處理液噴嘴15上,結合有成膜處理液配管26。在成膜處理液配管26的途中,插裝有使成膜處理液通路開關的成膜處理液閥27。對成膜處理液配管26,自成膜處理液供給源28供給成膜處理液。成膜處理液是可藉由加熱或減壓等規定的固化處理加以固化而形成固化膜,並可藉由規定的去除液而去除所述固化膜的液體。具體而言,作為成膜處理液,可利用面塗液、抗蝕液、酚樹脂液等。所謂面塗液,是指用以形成在抗蝕膜上形成的保護膜的液體。成膜處理液噴嘴15亦可為可在保持於自旋夾盤12上的基板W的上方移動的移動噴嘴。A film formation processing liquid pipe 26 is bonded to the film formation processing liquid nozzle 15. In the middle of the film formation processing liquid pipe 26, a film forming processing liquid valve 27 for opening the film forming processing liquid path is inserted. The film formation processing liquid piping 26 is supplied from the film forming processing liquid supply source 28 to the film forming processing liquid. The film formation treatment liquid is a liquid which can be cured by a predetermined curing treatment such as heating or decompression to form a cured film, and the cured film can be removed by a predetermined removal liquid. Specifically, as the film formation treatment liquid, a top coat liquid, a resist liquid, a phenol resin liquid, or the like can be used. The top coating liquid refers to a liquid for forming a protective film formed on a resist film. The film formation processing liquid nozzle 15 may be a moving nozzle that is movable above the substrate W held on the spin chuck 12.

在去除液噴嘴16上,結合有去除液配管101。在去除液配管101的途中插裝有使去除液通路開關的去除液閥102。對去除液配管101,自去除液供給源103供給去除液。去除液是可去除使成膜處理液固化而形成的固化膜的液體。具體而言,作為去除液,亦可使用鹼性顯影液或SC1(氨過氧化氫水)。鹼性顯影液亦可包含氨水、四甲基氫氧化銨水溶液(tetramethylammonium hydroxide,TMAH)、膽鹼(choline)水溶液等。去除液噴嘴16亦可為可在保持於自旋夾盤12上的基板W的上方移動的移動噴嘴。The removal liquid pipe 101 is joined to the removal liquid nozzle 16. A liquid removal valve 102 for removing the liquid passage switch is inserted in the middle of the liquid removal pipe 101. The removal liquid is supplied from the removal liquid supply source 103 to the removal liquid pipe 101. The removal liquid is a liquid that can remove a cured film formed by curing the film formation treatment liquid. Specifically, as the removal liquid, an alkaline developer or SC1 (ammonia hydrogen peroxide water) can also be used. The alkaline developing solution may also contain aqueous ammonia, tetramethylammonium hydroxide (TMAH), choline aqueous solution or the like. The removal liquid nozzle 16 may also be a moving nozzle that is movable above the substrate W held on the spin chuck 12.

在清洗噴嘴29上,結合有清洗液配管31A及有機溶劑配管31B。更具體而言,在所述實施形態中,清洗液配管31A與清洗噴嘴29結合,有機溶劑配管31B與清洗液配管31A合流。在清洗液配管31A的途中,插裝有使清洗液配通路開關的清洗液閥32A。在有機溶劑配管31B的途中,插裝有使有機溶劑通路開關的有機溶劑閥32B。對清洗液配管31A,自清洗液供給源33A供給清洗液。清洗液在所述實施形態中為去離子水(deionized water,DIW)。當然,亦可使用碳酸水等其他清洗液。對有機溶劑配管31B,自有機溶劑供給源33B供給有機溶劑。有機溶劑為表面張力小於清洗液的低表面張力液體的一例。在所述實施形態中,清洗液及有機溶劑是通過配管31A自共同的噴嘴29供給,但亦可設置分別供給清洗液及有機溶劑的各別的單獨的配管及噴嘴。The cleaning liquid pipe 31A and the organic solvent pipe 31B are joined to the cleaning nozzle 29. More specifically, in the above embodiment, the cleaning liquid pipe 31A is coupled to the cleaning nozzle 29, and the organic solvent pipe 31B is merged with the cleaning liquid pipe 31A. In the middle of the cleaning liquid pipe 31A, a cleaning liquid valve 32A for arranging the cleaning liquid with a passage switch is inserted. In the middle of the organic solvent pipe 31B, an organic solvent valve 32B for opening and closing the organic solvent is inserted. The cleaning liquid is supplied from the cleaning liquid supply source 33A to the cleaning liquid pipe 31A. In the embodiment, the cleaning liquid is deionized water (DIW). Of course, other cleaning solutions such as carbonated water can also be used. The organic solvent is supplied from the organic solvent supply source 33B to the organic solvent pipe 31B. The organic solvent is an example of a liquid having a surface tension lower than that of the cleaning liquid. In the above embodiment, the cleaning liquid and the organic solvent are supplied from the common nozzle 29 through the pipe 31A. However, separate separate pipes and nozzles for supplying the cleaning liquid and the organic solvent may be provided.

有機溶劑是可與清洗液置換的有機溶劑,更具體而言,是與水具有親和性的有機溶劑。作為此種有機溶劑,可例示異丙醇(isopropyl alcohol,IPA)、甲醇、乙醇、丁醇、丙酮、丙二醇甲醚醋酸酯(propylene glycol monomethyl ether acetate,PGMEA)、乙二醇甲醚醋酸酯(ethylene glycol monoethyl ether acetate,EGMEA)等。The organic solvent is an organic solvent which can be replaced with a cleaning liquid, and more specifically, an organic solvent having affinity with water. As such an organic solvent, isopropyl alcohol (IPA), methanol, ethanol, butanol, acetone, propylene glycol monomethyl ether acetate (PGMEA), ethylene glycol methyl ether acetate ( Ethylene glycol monoethyl ether acetate, EGMEA), and the like.

遮斷板19具有與保持於自旋夾盤12上的基板W的上表面相對向的對向面19a。遮斷板19是藉由遮斷板驅動單元20來驅動。遮斷板驅動單元20包含遮斷板升降單元20A及遮斷板旋轉單元20B。遮斷板升降單元20A使遮斷板19上下移動,使對向面19a與保持於自旋夾盤12上的基板W接近或遠離。遮斷板旋轉單元20B圍繞著與自旋夾盤12共同的旋轉軸線18對遮斷板19進行旋轉驅動。更具體而言,遮斷板旋轉單元20B對支撐著遮斷板19的旋轉軸25賦予旋轉力。在遮斷板19的對向面19a的中央,即,在旋轉軸線18上,配置有清洗噴嘴29。旋轉軸25為中空軸,其內部插通有清洗液配管31A。The blocking plate 19 has an opposing surface 19a opposed to the upper surface of the substrate W held on the spin chuck 12. The shutter 19 is driven by the shutter drive unit 20. The shutter drive unit 20 includes a shutter lift unit 20A and a shutter rotation unit 20B. The shutter lifting unit 20A moves the shutter 19 up and down to bring the facing surface 19a closer to or away from the substrate W held by the spin chuck 12. The shutter rotation unit 20B rotationally drives the shutter 19 around the rotation axis 18 common to the spin chuck 12. More specifically, the blocking plate rotating unit 20B imparts a rotational force to the rotating shaft 25 that supports the blocking plate 19. A cleaning nozzle 29 is disposed at the center of the opposing surface 19a of the blocking plate 19, that is, on the rotation axis 18. The rotating shaft 25 is a hollow shaft, and a cleaning liquid pipe 31A is inserted therein.

在對向面19a的中央,形成有使清洗噴嘴29朝向下方而露出的開口19b。所述開口19b與旋轉軸25的內部空間連通。在清洗液配管31A與旋轉軸25的內壁之間,形成有用以使惰性氣體流通的惰性氣體流路45。在所述惰性氣體流路45上,連接有惰性氣體配管46。在惰性氣體配管46的途中,插裝有使流路開關的惰性氣體閥47。惰性氣體配管46與惰性氣體供給源48結合。惰性氣體供給源48供給惰性氣體。惰性氣體是對基板W的表面的物質而言為惰性的氣體,例如亦可為氮氣。當將藥液噴嘴組裝至遮斷板19時,在旋轉軸25中進而插通藥液配管,藥液噴嘴使開口19b朝向下方而露出。An opening 19b that exposes the cleaning nozzle 29 downward is formed in the center of the opposing surface 19a. The opening 19b communicates with the internal space of the rotating shaft 25. An inert gas flow path 45 for allowing an inert gas to flow is formed between the cleaning liquid pipe 31A and the inner wall of the rotating shaft 25. An inert gas pipe 46 is connected to the inert gas flow path 45. In the middle of the inert gas pipe 46, an inert gas valve 47 for the flow path switch is inserted. The inert gas pipe 46 is combined with an inert gas supply source 48. The inert gas supply source 48 supplies an inert gas. The inert gas is a gas which is inert to the substance on the surface of the substrate W, and may be, for example, nitrogen. When the chemical liquid nozzle is assembled to the blocking plate 19, the chemical liquid pipe is further inserted into the rotating shaft 25, and the chemical liquid nozzle exposes the opening 19b downward.

藉由遮斷板升降單元20A使遮斷板19上下移動,而使得清洗噴嘴29同時升降,由此,自保持於自旋夾盤12上的基板W至清洗噴嘴29為止的高度發生變動。When the shutter plate 19 is moved up and down by the shutter elevating unit 20A, the cleaning nozzle 29 is simultaneously moved up and down, whereby the height from the substrate W held on the spin chuck 12 to the cleaning nozzle 29 fluctuates.

自旋夾盤12的旋轉軸130由中空軸構成。在所述旋轉軸130中,插通有背面噴嘴131。背面噴嘴131的上端形成有朝向基板W下表面的旋轉中心噴出清洗液的噴出口132。在背面噴嘴131上,結合有清洗液供給配管133。清洗液供給配管133經由清洗液閥134與清洗液供給源135結合,並且經由有機溶劑閥136與有機溶劑供給源137結合。清洗液供給源135供給DIW等清洗液。有機溶劑供給源137供給IPA等有機溶劑。The rotating shaft 130 of the spin chuck 12 is constituted by a hollow shaft. In the rotating shaft 130, a back nozzle 131 is inserted. The upper end of the back surface nozzle 131 is formed with a discharge port 132 that discharges the cleaning liquid toward the center of rotation of the lower surface of the substrate W. A cleaning liquid supply pipe 133 is coupled to the back surface nozzle 131. The cleaning liquid supply pipe 133 is coupled to the cleaning liquid supply source 135 via the cleaning liquid valve 134, and is coupled to the organic solvent supply source 137 via the organic solvent valve 136. The cleaning liquid supply source 135 supplies a cleaning liquid such as DIW. The organic solvent supply source 137 supplies an organic solvent such as IPA.

背面噴嘴131與旋轉軸130之間的空間形成有用以朝向基板W的下表面供給惰性氣體的惰性氣體流路140。在惰性氣體流路140上,結合有惰性氣體供給配管141。在惰性氣體供給配管141的途中插裝有惰性氣體閥142。惰性氣體供給配管141與惰性氣體供給源143結合。惰性氣體供給源143供給惰性氣體。惰性氣體是對構成基板W的物質而言為惰性的氣體,例如亦可為氮氣。The space between the back nozzle 131 and the rotating shaft 130 forms an inert gas flow path 140 for supplying an inert gas toward the lower surface of the substrate W. An inert gas supply pipe 141 is coupled to the inert gas flow path 140. An inert gas valve 142 is inserted in the middle of the inert gas supply pipe 141. The inert gas supply pipe 141 is combined with the inert gas supply source 143. The inert gas supply source 143 supplies an inert gas. The inert gas is a gas inert to the material constituting the substrate W, and may be, for example, nitrogen.

在處理室11的側壁35、側壁36,分別形成有藉由主搬運機器人CR而搬入/搬出基板W的基板搬入/搬出開口37、以及藉由局部搬運機器人LR而搬入/搬出基板W的基板搬入/搬出開口38。在基板搬入/搬出開口37及基板搬入/搬出開口38上,分別配置有使該些開口開關的擋板39、擋板40。擋板39、擋板40藉由擋板驅動單元41、擋板驅動單元42而分別開關驅動。基板搬入/搬出開口37是使主搬運室5與處理室11連通的開口,形成於對主搬運室5與處理室11進行劃分的側壁35上。基板搬入/搬出開口38是使處理室11與局部搬運室C連通的開口,形成於對處理室11與局部搬運室C進行劃分的側壁36上。In the side wall 35 and the side wall 36 of the processing chamber 11, the substrate loading/unloading opening 37 for loading and unloading the substrate W by the main transport robot CR and the substrate loading and unloading of the substrate W by the partial transport robot LR are respectively formed. / Move out of the opening 38. The shutter 39 and the shutter 40 that open the opening switches are disposed on the substrate loading/unloading opening 37 and the substrate loading/unloading opening 38, respectively. The baffle 39 and the baffle 40 are separately driven and driven by the baffle drive unit 41 and the baffle drive unit 42. The substrate loading/unloading opening 37 is an opening that allows the main transfer chamber 5 to communicate with the processing chamber 11, and is formed on the side wall 35 that divides the main transfer chamber 5 and the processing chamber 11. The substrate loading/unloading opening 38 is an opening that allows the processing chamber 11 to communicate with the partial transfer chamber C, and is formed on the side wall 36 that divides the processing chamber 11 and the partial transfer chamber C.

若對液體處理單元M的動作進行概述,則如下所述。The outline of the operation of the liquid processing unit M is as follows.

當主搬運機器人CR搬入未處理的基板W時,擋板39打開基板搬入/搬出開口37。保持著未處理的基板W的主搬運機器人CR的手(hand)HC(臂)自基板搬入/搬出開口37進入至處理室11內,將所述基板W遞交至自旋夾盤12。為了基板W的交接,亦可根據需要,使杯體13或自旋夾盤12上下移動。已將基板W遞交至自旋夾盤12的主搬運機器人CR的手HC通過基板搬入/搬出開口37自處理室11退出。然後,擋板驅動單元41對擋板39進行驅動,而關閉基板搬入/搬出開口37。When the main transport robot CR carries the unprocessed substrate W, the shutter 39 opens the substrate loading/unloading opening 37. The hand HC (arm) of the main transport robot CR holding the unprocessed substrate W enters the processing chamber 11 from the substrate loading/unloading opening 37, and delivers the substrate W to the spin chuck 12. For the transfer of the substrate W, the cup 13 or the spin chuck 12 may be moved up and down as needed. The hand HC that has delivered the substrate W to the main transport robot CR of the spin chuck 12 exits from the processing chamber 11 through the substrate loading/unloading opening 37. Then, the shutter driving unit 41 drives the shutter 39 to close the substrate loading/unloading opening 37.

繼而,藉由馬達17而使自旋夾盤12旋轉,打開藥液閥22。由此,將藥液供給至旋轉狀態的基板W的表面,且藉由離心力而使藥液遍布於基板W表面的整個區域。如上所述,執行利用藥液對基板W進行處理的藥液步驟(用於前洗滌的藥液步驟)。藉由關閉藥液閥22而停止藥液的供給,藥液步驟結束。Then, the spin chuck 12 is rotated by the motor 17, and the chemical valve 22 is opened. Thereby, the chemical liquid is supplied to the surface of the substrate W in a rotating state, and the chemical liquid is spread over the entire surface of the surface of the substrate W by centrifugal force. As described above, the chemical liquid step (the liquid chemical step for the pre-washing) for treating the substrate W with the chemical liquid is performed. The supply of the chemical solution is stopped by closing the chemical solution valve 22, and the chemical liquid step is completed.

在藥液步驟之後,一面繼續進行自旋夾盤12的旋轉,一面打開清洗液閥32A、清洗液閥134。由此,對旋轉狀態的基板W的表面及背面供給清洗液。供給至基板W的表面的清洗液在基板W表面的整個區域蔓延,從而替換基板W表面的藥液。又,被供給至基板W的背面的清洗液在基板W背面的整個區域蔓延,從而沖洗附著在基板W的背面上的清洗液。如上所述,執行清洗步驟。藉由關閉清洗液閥32A,而使清洗液的供給停止,清洗步驟結束。After the chemical liquid step, the cleaning liquid valve 32A and the cleaning liquid valve 134 are opened while the rotation of the spin chuck 12 is continued. Thereby, the cleaning liquid is supplied to the front and back surfaces of the substrate W in a rotating state. The cleaning liquid supplied to the surface of the substrate W spreads over the entire area of the surface of the substrate W, thereby replacing the chemical liquid on the surface of the substrate W. Moreover, the cleaning liquid supplied to the back surface of the substrate W spreads over the entire area of the back surface of the substrate W, thereby rinsing the cleaning liquid adhering to the back surface of the substrate W. As described above, the washing step is performed. By closing the cleaning liquid valve 32A, the supply of the cleaning liquid is stopped, and the washing step is completed.

在所述清洗步驟結束後,或在清洗步驟即將結束之前,打開有機溶劑閥32B。由此,對基板W表面供給有機溶劑。使自旋夾盤12保持為旋轉狀態。因此,有機溶劑在基板W表面的整個區域蔓延,從而替換基板W表面的清洗液。此時,遮斷板驅動單元20使遮斷板19下降,而配置在使對向面19a與基板W的表面接近的處理位置。The organic solvent valve 32B is opened after the end of the washing step, or just before the end of the washing step. Thereby, an organic solvent is supplied to the surface of the substrate W. The spin chuck 12 is kept in a rotated state. Therefore, the organic solvent spreads over the entire area of the surface of the substrate W, thereby replacing the cleaning liquid on the surface of the substrate W. At this time, the shutter drive unit 20 lowers the shutter 19 and is disposed at a processing position where the opposing surface 19a is close to the surface of the substrate W.

其次,關閉有機溶劑閥32B,使遮斷板19上升。然後,在基板W的上方配置成膜處理液噴嘴15,在所述狀態下,打開成膜處理液閥27。由此,對基板W表面供給成膜處理液。自旋夾盤12保持在旋轉狀態。因此,成膜處理液在基板W表面的整個區域蔓延,而形成遍及基板W表面的整個區域的液膜10。形成所述成膜處理液膜10之後,關閉成膜處理液閥27。Next, the organic solvent valve 32B is closed to raise the shutter 19 . Then, the film forming processing liquid nozzle 15 is placed above the substrate W, and in this state, the film forming processing liquid valve 27 is opened. Thereby, the film formation processing liquid is supplied to the surface of the substrate W. The spin chuck 12 is kept in a rotated state. Therefore, the film formation treatment liquid spreads over the entire area of the surface of the substrate W, and the liquid film 10 is formed over the entire area of the surface of the substrate W. After the film formation treatment liquid film 10 is formed, the film formation treatment liquid valve 27 is closed.

其次,成膜處理液噴嘴15退避後,使遮斷板19下降,而配置在對向面19a與基板W接近的處理位置。然後,打開有機溶劑閥136。由此,自背面噴嘴131向基板W背面(下表面)供給有機溶劑,所述有機溶劑藉由離心力而遍布於基板W的背面的整個區域,從而沖洗附著於基板W的背面的成膜處理液。Then, after the film formation processing liquid nozzle 15 is retracted, the blocking plate 19 is lowered, and the processing position at which the opposing surface 19a and the substrate W are close to each other is disposed. Then, the organic solvent valve 136 is opened. Thereby, an organic solvent is supplied from the back surface nozzle 131 to the back surface (lower surface) of the substrate W, and the organic solvent is spread over the entire area of the back surface of the substrate W by centrifugal force, thereby rinsing the film forming treatment liquid adhering to the back surface of the substrate W. .

其後,關閉有機溶劑閥136,使自旋夾盤12的旋轉加速。由此,使基板W的背面的液體成分甩開。此時,亦可打開惰性氣體閥47及惰性氣體閥142。由此,在基板W的表面側,促使成膜處理液膜10中的揮發成分的揮發,由此,使成膜處理液膜10的固化推進。又,在基板W的背面側,促進乾燥。Thereafter, the organic solvent valve 136 is closed to accelerate the rotation of the spin chuck 12. Thereby, the liquid component on the back surface of the substrate W is cleaved. At this time, the inert gas valve 47 and the inert gas valve 142 can also be opened. Thereby, volatilization of the volatile component in the film formation processing liquid film 10 is promoted on the surface side of the substrate W, whereby the solidification of the film formation processing liquid film 10 is promoted. Moreover, drying is promoted on the back side of the substrate W.

其後,遮斷板驅動單元20使遮斷板19退避至上方。繼而,使自旋夾盤12的旋轉停止,從而結束用以形成成膜處理液膜10的處理。Thereafter, the shutter driving unit 20 retracts the shutter 19 to the upper side. Then, the rotation of the spin chuck 12 is stopped, and the process for forming the film formation processing liquid film 10 is ended.

其次,擋板驅動單元42對擋板40進行驅動,打開基板搬入/搬出開口38。局部搬運機器人LR的手LH(臂)自所述基板搬入/搬出開口38進入至處理室11內,從自旋夾盤12接收基板W,且通過基板搬入/搬出開口38,將所述基板W搬出至處理室11外。為了基板W的交接,亦可根據需要,使杯體13或自旋夾盤12上下移動。局部搬運機器人LR將表面形成有成膜處理液膜10的狀態的基板W搬運至固化單元D。Next, the shutter driving unit 42 drives the shutter 40 to open the substrate loading/unloading opening 38. The hand LH (arm) of the local transport robot LR enters the processing chamber 11 from the substrate loading/unloading opening 38, receives the substrate W from the spin chuck 12, and passes the substrate W through the substrate loading/unloading opening 38. Move out to the outside of the processing chamber 11. For the transfer of the substrate W, the cup 13 or the spin chuck 12 may be moved up and down as needed. The local transport robot LR transports the substrate W in a state in which the film formation processing liquid film 10 is formed on the surface to the curing unit D.

利用固化單元D使成膜處理液膜10固化而形成為固化膜10S之後,將形成有所述固化膜10S的基板W藉由局部搬運機器人LR,搬運至液體處理單元M。此時,擋板驅動單元42對擋板40進行驅動,而打開基板搬入/搬出開口38。局部搬運機器人LR的手LH(臂)自所述基板搬入/搬出開口38進入至處理室11內,將基板W遞交至自旋夾盤12之後,退出至處理室11外。為了基板W的交接,亦可根據需要,使杯體13或自旋夾盤12上下移動。After the film formation treatment liquid film 10 is cured by the curing unit D to form the cured film 10S, the substrate W on which the cured film 10S is formed is transported to the liquid processing unit M by the partial transfer robot LR. At this time, the shutter driving unit 42 drives the shutter 40 to open the substrate loading/unloading opening 38. The hand LH (arm) of the local transport robot LR enters the processing chamber 11 from the substrate loading/unloading opening 38, and the substrate W is delivered to the spin chuck 12, and then exits to the outside of the processing chamber 11. For the transfer of the substrate W, the cup 13 or the spin chuck 12 may be moved up and down as needed.

液體處理單元M對如上所述被導入的基板W,執行用以去除所述表面的固化膜10S的去除步驟及其後的洗滌步驟(後洗滌步驟)。The liquid processing unit M performs a removal step of removing the cured film 10S of the surface and a subsequent washing step (post-washing step) on the substrate W introduced as described above.

具體而言,藉由馬達17而使自旋夾盤12旋轉,然後,為了執行去除步驟,而在保持於自旋夾盤12上的基板W的上方配置去除液噴嘴16。繼而,打開去除液閥102。由此,對基板W的表面供給去除液,所述去除液藉由離心力而遍布於基板W的表面的整個區域。藉由所述去除液的作用,而使基板W的表面的固化膜10S剝離。Specifically, the spin chuck 12 is rotated by the motor 17, and then the removal liquid nozzle 16 is placed above the substrate W held on the spin chuck 12 in order to perform the removal step. Then, the removal liquid valve 102 is opened. Thereby, the removal liquid is supplied to the surface of the substrate W, and the removal liquid is spread over the entire area of the surface of the substrate W by centrifugal force. The cured film 10S on the surface of the substrate W is peeled off by the action of the removal liquid.

其次,關閉去除液閥102,使去除液噴嘴16自基板W的上方退避之後,執行後洗滌步驟。具體而言,在將藥液噴嘴14配置在基板W的上方,使自旋夾盤12旋轉的狀態下,打開藥液閥22。由此,對旋轉狀態的基板W的表面供給藥液,且藉由離心力而使藥液遍布於基板W表面的整個區域。如上所述,執行利用藥液對基板W進行處理的藥液步驟(用於後洗滌的藥液步驟)。藉由關閉藥液閥22而停止藥液的供給,藥液步驟結束。使藥液噴嘴14從自旋夾盤12的上方退避。Next, after the removal liquid valve 102 is closed and the removal liquid nozzle 16 is retracted from above the substrate W, a post-washing step is performed. Specifically, the chemical liquid nozzle 22 is opened while the chemical liquid nozzle 14 is placed above the substrate W and the spin chuck 12 is rotated. Thereby, the chemical liquid is supplied to the surface of the substrate W in the rotating state, and the chemical liquid is spread over the entire surface of the surface of the substrate W by the centrifugal force. As described above, the chemical liquid step (the liquid medicine step for post-washing) for treating the substrate W with the chemical liquid is performed. The supply of the chemical solution is stopped by closing the chemical solution valve 22, and the chemical liquid step is completed. The chemical liquid nozzle 14 is retracted from above the spin chuck 12.

在藥液步驟之後,一面繼續進行自旋夾盤12的旋轉,一面打開清洗液閥32A、清洗液閥134。由此,對旋轉狀態的基板W的表面及背面供給清洗液。供給至基板W的表面的清洗液在基板W表面的整個區域蔓延,從而對基板W表面的藥液進行置換。又,供給至基板W的背面的清洗液在基板W背面的整個區域蔓延,從而沖洗附著於基板W的背面的清洗液。如上所述,執行清洗步驟。藉由關閉清洗液閥32A而停止清洗液的供給,從而清洗步驟結束。After the chemical liquid step, the cleaning liquid valve 32A and the cleaning liquid valve 134 are opened while the rotation of the spin chuck 12 is continued. Thereby, the cleaning liquid is supplied to the front and back surfaces of the substrate W in a rotating state. The cleaning liquid supplied to the surface of the substrate W spreads over the entire area of the surface of the substrate W, thereby replacing the chemical liquid on the surface of the substrate W. Moreover, the cleaning liquid supplied to the back surface of the substrate W spreads over the entire area of the back surface of the substrate W, thereby rinsing the cleaning liquid adhering to the back surface of the substrate W. As described above, the washing step is performed. The supply of the cleaning liquid is stopped by closing the cleaning liquid valve 32A, and the washing step is completed.

在所述清洗步驟結束後,或在清洗步驟即將結束前,打開有機溶劑閥32B、有機溶劑閥136。由此,對基板W表面及背面供給有機溶劑。自旋夾盤12保持在旋轉狀態。因此,有機溶劑在基板W表面及背面的整個區域蔓延,從而對基板W表面及背面的清洗液進行置換。此時,遮斷板驅動單元20使遮斷板19下降,而配置在使對向面19a與基板W的表面接近的處理位置。After the end of the washing step, or just before the end of the washing step, the organic solvent valve 32B and the organic solvent valve 136 are opened. Thereby, an organic solvent is supplied to the front and back surfaces of the substrate W. The spin chuck 12 is kept in a rotated state. Therefore, the organic solvent spreads over the entire surface of the substrate W and the back surface, and the cleaning liquid on the front and back surfaces of the substrate W is replaced. At this time, the shutter drive unit 20 lowers the shutter 19 and is disposed at a processing position where the opposing surface 19a is close to the surface of the substrate W.

其次,關閉有機溶劑閥32B、有機溶劑閥136,取而代之,打開惰性氣體閥47、惰性氣體閥142,對基板W的表面及背面供給惰性氣體。又,使自旋夾盤12的旋轉加速。由此,使基板W的表面及背面的液體成分甩開。供給至基板W的表面及背面的惰性氣體促進基板W的乾燥。Next, the organic solvent valve 32B and the organic solvent valve 136 are closed, and the inert gas valve 47 and the inert gas valve 142 are opened, and an inert gas is supplied to the front and back surfaces of the substrate W. Further, the rotation of the spin chuck 12 is accelerated. Thereby, the liquid component on the front and back surfaces of the substrate W is cleaved. The inert gas supplied to the front and back surfaces of the substrate W promotes drying of the substrate W.

當乾燥處理結束時,使自旋夾盤12的旋轉停止,關閉惰性氣體閥47、惰性氣體閥142。然後,遮斷板驅動單元20使遮斷板19退避至上方。When the drying process is completed, the rotation of the spin chuck 12 is stopped, and the inert gas valve 47 and the inert gas valve 142 are closed. Then, the shutter driving unit 20 retracts the shutter 19 to the upper side.

其次,擋板驅動單元41對擋板39進行驅動,打開基板搬入/搬出開口37。主搬運機器人CR的手HC(臂)自所述基板搬入/搬出開口37進入至處理室11內,從自旋夾盤12接收基板W,且通過基板搬入/搬出開口37,將所述基板W搬出至處理室11外。為了基板W的交接,亦可根據需要,使杯體13或自旋夾盤12上下移動。Next, the shutter driving unit 41 drives the shutter 39 to open the substrate loading/unloading opening 37. The hand HC (arm) of the main transport robot CR enters the processing chamber 11 from the substrate loading/unloading opening 37, receives the substrate W from the spin chuck 12, and passes the substrate W through the substrate loading/unloading opening 37. Move out to the outside of the processing chamber 11. For the transfer of the substrate W, the cup 13 or the spin chuck 12 may be moved up and down as needed.

基板W上的固化膜10S的去除亦可根據所述固化膜10S的種類,藉由自藥液噴嘴14供給的藥液來進行。即,亦可使用自藥液噴嘴14供給的藥液作為去除液。此時,可省略去除液噴嘴16及與去除液噴嘴16相關的構成,而無需區分去除步驟及後洗滌步驟。The removal of the cured film 10S on the substrate W can also be performed by the chemical liquid supplied from the chemical liquid nozzle 14 depending on the type of the cured film 10S. That is, the chemical liquid supplied from the chemical liquid nozzle 14 can also be used as the removal liquid. At this time, the configuration of the removal liquid nozzle 16 and the removal liquid nozzle 16 can be omitted without distinguishing between the removal step and the post-washing step.

又,形成成膜處理液膜10之前的前洗滌步驟亦可省略。Further, the pre-washing step before the film formation treatment liquid film 10 is formed may be omitted.

又,當將藥液噴嘴組裝至遮斷板19時,遮斷板19在處理期間,始終位於與基板W接近的接近位置。Further, when the chemical liquid nozzle is assembled to the blocking plate 19, the blocking plate 19 is always located close to the substrate W during the processing.

圖3是用以說明固化單元D的構成例的圖解性的剖面圖。固化單元D具有包含可密閉的減壓腔室(真空腔室)的固化室51。固化室51的容積小於液體處理單元M的處理室11的容積,由此,固化室51具有可使內部空間有效率地減壓的構造。在固化室51內,配置有保持基板W的作為基板保持單元的基板固持器52。在基板固持器52中,內置有作為基板加熱單元的加熱器53H、及作為基板冷卻單元的冷卻單元53C,由此,構成溫度調節板。加熱器53H藉由傳熱或熱輻射而對基板W進行加熱。亦可取代加熱器53H,使用照射電磁波(紫外線、紅外線、微波、雷射光等)對基板進行加熱的電磁波照射單元作為基板加熱單元。又,亦可使用閃光燈(flash lamp)作為基板加熱單元。冷卻單元53C既可具有通過基板固持器52內部的冷媒通路,亦可具有電子冷熱元件。3 is a schematic cross-sectional view for explaining a configuration example of the curing unit D. The curing unit D has a curing chamber 51 including a closable decompression chamber (vacuum chamber). The volume of the curing chamber 51 is smaller than the volume of the processing chamber 11 of the liquid processing unit M, whereby the curing chamber 51 has a structure in which the internal space can be efficiently decompressed. In the curing chamber 51, a substrate holder 52 as a substrate holding unit that holds the substrate W is disposed. The substrate holder 52 incorporates a heater 53H as a substrate heating unit and a cooling unit 53C as a substrate cooling unit, thereby constituting a temperature adjustment plate. The heater 53H heats the substrate W by heat transfer or heat radiation. Instead of the heater 53H, an electromagnetic wave irradiation unit that irradiates the substrate with electromagnetic waves (ultraviolet rays, infrared rays, microwaves, laser light, or the like) may be used as the substrate heating unit. Further, a flash lamp can also be used as the substrate heating unit. The cooling unit 53C may have a refrigerant passage through the inside of the substrate holder 52, or may have an electronic cooling element.

貫通基板固持器52而配置有多根(3根以上)頂升銷(lift pin)54。頂升銷54藉由頂升銷升降單元55而上下移動,由此,使基板W在基板固持器52上進行上下移動。A plurality of (three or more) lift pins 54 are disposed through the substrate holder 52. The jacking pin 54 is moved up and down by the jacking up/down unit 55, whereby the substrate W is moved up and down on the substrate holder 52.

固化室51包括底座部511、以及可相對於底座部511而上下移動的活動蓋部512。活動蓋部512藉由蓋部驅動單元56,而相對於底座部511上下移動。在底座部511與活動蓋部512之間劃分出固化處理空間50。活動蓋部512的下端緣部58是沿仿照底座部511的上表面59的平面而形成。在底座部511上,在與活動蓋部512的下端緣部58相對向的位置上,配置有作為密封構件的O型環60。當使活動蓋部512與底座部511接近,而向底座部511按壓時,活動蓋部512與底座部511之間藉由O型環60而密閉。如上所述,形成經密閉的固化處理空間50。The curing chamber 51 includes a base portion 511 and a movable cover portion 512 that is movable up and down with respect to the base portion 511. The movable cover portion 512 moves up and down with respect to the base portion 511 by the cover portion driving unit 56. A curing processing space 50 is defined between the base portion 511 and the movable cover portion 512. The lower end edge portion 58 of the movable cover portion 512 is formed along a plane that mimics the upper surface 59 of the base portion 511. On the base portion 511, an O-ring 60 as a sealing member is disposed at a position opposed to the lower end edge portion 58 of the movable cover portion 512. When the movable cover portion 512 is brought close to the base portion 511 and pressed against the base portion 511, the movable cover portion 512 and the base portion 511 are sealed by the O-ring 60. As described above, the sealed curing treatment space 50 is formed.

在底座部511上,結合有排氣配管62。排氣配管62與固化處理空間50連通。排氣配管62與真空泵等排氣單元63連接。在排氣配管62上,插裝有排氣閥64。排氣單元63是減壓單元的一例,藉由打開排氣閥64對排氣單元63進行驅動,可使固化處理空間50減壓至低於大氣壓的氣壓(例如0.01 Torr以下)。An exhaust pipe 62 is coupled to the base portion 511. The exhaust pipe 62 is in communication with the solidification processing space 50. The exhaust pipe 62 is connected to an exhaust unit 63 such as a vacuum pump. An exhaust valve 64 is inserted in the exhaust pipe 62. The exhaust unit 63 is an example of a decompression unit, and by driving the exhaust unit 63 by opening the exhaust valve 64, the solidification processing space 50 can be depressurized to a pressure lower than atmospheric pressure (for example, 0.01 Torr or less).

在活動蓋部512上,設置有用以對固化處理空間50導入惰性氣體的惰性氣體噴嘴71。在惰性氣體噴嘴71上,結合有惰性氣體配管72。在惰性氣體配管72的途中,插裝有惰性氣體閥73。惰性氣體配管72與供給惰性氣體的惰性氣體供給源74結合。惰性氣體是低濕度氣體的一例,惰性氣體噴嘴71等是低濕度氣體供給單元的一例。例如,藉由自將基板W搬入至固化處理空間50之前,預先自惰性氣體噴嘴71供給惰性氣體,可對固化室51內進行換氣,從而可形成成膜處理液10容易乾燥的氣氛。An inert gas nozzle 71 for introducing an inert gas into the solidification processing space 50 is provided on the movable cover portion 512. An inert gas pipe 72 is incorporated in the inert gas nozzle 71. In the middle of the inert gas pipe 72, an inert gas valve 73 is inserted. The inert gas pipe 72 is combined with an inert gas supply source 74 that supplies an inert gas. The inert gas is an example of a low-humidity gas, and the inert gas nozzle 71 or the like is an example of a low-humidity gas supply unit. For example, before the substrate W is carried into the curing processing space 50, the inert gas is supplied from the inert gas nozzle 71 in advance, and the inside of the curing chamber 51 can be ventilated, whereby an atmosphere in which the film forming processing liquid 10 is easily dried can be formed.

若對固化單元D的動作進行概述,則如下所述。When the operation of the curing unit D is summarized, it is as follows.

局部搬運機器人LR的手LH將表面上形成有成膜處理液膜10的狀態的基板W搬入至固化單元D。當搬入基板W時,活動蓋部512位於遠離底座部511的打開位置,由此,在活動蓋部512與底座部511之間形成基板搬入開口。此時,頂升銷54位於其前端與基板固持器52的表面向上方隔離的上升位置。在所述狀態下,局部搬運機器人LR的手LH進入至活動蓋部512與底座部511之間,將基板W遞交至頂升銷54。被遞交基板W的頂升銷54下降,將基板W載置在基板固持器52的上表面。The hand LH of the local transport robot LR carries the substrate W in a state in which the film formation processing liquid film 10 is formed on the surface to the curing unit D. When the substrate W is carried in, the movable cover portion 512 is located at an open position away from the base portion 511, whereby a substrate loading opening is formed between the movable cover portion 512 and the base portion 511. At this time, the jacking pin 54 is located at a rising position in which the front end thereof is separated upward from the surface of the substrate holder 52. In this state, the hand LH of the local transport robot LR enters between the movable cover portion 512 and the base portion 511, and the substrate W is delivered to the jacking pin 54. The jacking pin 54 of the substrate W is lowered, and the substrate W is placed on the upper surface of the substrate holder 52.

蓋部驅動單元56使活動蓋部512下降,經由O型環60而按壓至底座部511。由此,固化處理空間50成為密閉空間。然後,藉由打開排氣閥64,對排氣單元63進行驅動,而使固化處理空間50內的氣氛排氣,使固化處理空間50減壓。將惰性氣體閥73設為關閉狀態,以不阻礙減壓。The lid driving unit 56 lowers the movable lid portion 512 and presses it to the base portion 511 via the O-ring 60. Thereby, the solidification processing space 50 becomes a sealed space. Then, by opening the exhaust valve 64, the exhaust unit 63 is driven to exhaust the atmosphere in the solidification processing space 50, and the solidification processing space 50 is depressurized. The inert gas valve 73 is set to the closed state so as not to impede the pressure reduction.

藉由使固化處理空間50內減壓,來促進基板W的表面的成膜處理液膜10的蒸發。進而,對加熱器53H進行驅動而對基板固持器52進行加熱,從而進行烘烤(bake)處理。如上所述,同時使用基板W的氣氛的減壓及基板W的加熱,而使成膜處理液膜10迅速固化。所謂固化,此處是指固態化或硬化,既可為成膜處理液中的溶媒成分經蒸發而乾燥從而固態化或硬化,亦可為成膜處理液中的分子彼此相結合而高分子化從而固態化或硬化。藉由在所述固化時產生體積收縮,力會作用至附著於基板W的表面的微粒等異物,由此,使異物自基板W的表面脫離。The evaporation of the film formation treatment liquid film 10 on the surface of the substrate W is promoted by decompressing the inside of the curing treatment space 50. Further, the heater 53H is driven to heat the substrate holder 52 to perform a bake process. As described above, the pressure reduction of the atmosphere of the substrate W and the heating of the substrate W are simultaneously used to rapidly cure the film formation processing liquid film 10. The term "curing" as used herein refers to solidification or hardening, which may be carried out by solidifying or hardening the solvent component in the film-forming treatment liquid by evaporation, or by combining molecules in the film-forming treatment liquid to form a polymer. Thereby solidifying or hardening. By causing volume shrinkage during the curing, the force acts on foreign matter such as fine particles adhering to the surface of the substrate W, whereby the foreign matter is detached from the surface of the substrate W.

成膜處理液膜10的固化結束後,使排氣單元63停止,且根據需要打開惰性氣體閥73,從而使固化處理空間50內加壓至大氣壓。繼而,加熱器53H驅動停止,取而代之,使冷卻單元53C運轉,而使基板固持器52冷卻。由此,使基板W冷卻至例如常溫為止。其後,蓋部驅動單元56使活動蓋部512上升,而遠離底座部511。然後,頂升銷54上升,將基板W抬起至與基板固持器52的上表面向上方遠離的高度為止。在所述狀態下,局部搬運機器人LR的手LH進入至活動蓋部512與底座部511之間,自頂升銷54撈起處理後的基板W,而退出至局部搬運室C。當主搬運機器人CR搬運固化處理後的基板W時,主搬運機器人CR的手HC進入至活動蓋部512與底座部511之間,自頂升銷54撈出處理後的基板W,而退出至主搬運室5。After the curing of the film formation processing liquid film 10 is completed, the exhaust unit 63 is stopped, and the inert gas valve 73 is opened as necessary to pressurize the inside of the curing processing space 50 to atmospheric pressure. Then, the heater 53H is stopped by driving, and instead, the cooling unit 53C is operated to cool the substrate holder 52. Thereby, the substrate W is cooled to, for example, normal temperature. Thereafter, the cover driving unit 56 raises the movable cover portion 512 away from the base portion 511. Then, the jacking pin 54 is raised to lift the substrate W to a height that is upward from the upper surface of the substrate holder 52. In the state described above, the hand LH of the partial transport robot LR enters between the movable cover portion 512 and the base portion 511, and the processed substrate W is lifted from the top lift pin 54 to exit to the partial transfer chamber C. When the main transport robot CR transports the substrate W after the curing process, the hand HC of the main transport robot CR enters between the movable cover portion 512 and the base portion 511, and the processed substrate W is removed from the top lift pin 54 and exits to Main handling room 5.

圖4是用以說明局部搬運機器人LR的構成例的圖。局部搬運機器人LR配置在局部搬運室C內。局部搬運室C與液體處理單元M的處理室11及配置在所述處理室11之上的固化單元D的固化室51相對向,當打開固化室51時,與固化室51連通。FIG. 4 is a view for explaining a configuration example of the partial transport robot LR. The local transfer robot LR is disposed in the partial transfer chamber C. The partial transfer chamber C faces the processing chamber 11 of the liquid processing unit M and the curing chamber 51 of the curing unit D disposed above the processing chamber 11, and communicates with the curing chamber 51 when the curing chamber 51 is opened.

局部搬運機器人LR包括用以保持基板W的手LH(臂)、以及對手LH進行驅動的手驅動單元90。在此例中,手LH包括一對手LH1、手LH2,該些手是沿上下方向錯開(此外根據需要沿水平方向錯開)而配置。手驅動單元90使手LH1、手LH2進行水平移動及垂直移動,然後根據需要,使手LH1、手LH2圍繞著鉛垂的旋轉軸線89轉動。The local transport robot LR includes a hand LH (arm) for holding the substrate W, and a hand drive unit 90 for driving the opponent LH. In this example, the hand LH includes a pair of hands LH1 and a hand LH2 which are arranged to be staggered in the up and down direction (and further shifted in the horizontal direction as needed). The hand drive unit 90 causes the hand LH1 and the hand LH2 to move horizontally and vertically, and then rotates the hand LH1 and the hand LH2 around the vertical rotation axis 89 as needed.

由此,手LH1、手LH2可進入至液體處理單元M的處理室11內從自旋夾盤12接收基板W,將所述基板W搬運至固化單元D為止,且將所述基板W搬入至固化室51內而遞交至頂升銷54(參照圖3),然後退出至局部搬運室C。又,手LH1、手LH2可進入至固化單元D的固化室51內自頂升銷54接收基板W,將所述基板W搬運至液體處理單元M為止,且將所述基板W搬入至處理室11內而遞交至自旋夾盤12,然後退出至局部搬運室C。Thereby, the hand LH1 and the hand LH2 can enter the processing chamber 11 of the liquid processing unit M to receive the substrate W from the spin chuck 12, transport the substrate W to the curing unit D, and carry the substrate W thereto. The inside of the curing chamber 51 is delivered to the jacking pin 54 (refer to FIG. 3), and then exits to the partial carrying chamber C. Further, the hand LH1 and the hand LH2 can enter the curing chamber 51 of the curing unit D to receive the substrate W from the top lifting pin 54, transport the substrate W to the liquid processing unit M, and carry the substrate W into the processing chamber. 11 is delivered to the spin chuck 12 and then exits to the partial transfer chamber C.

手驅動單元90至少在進入至液體處理單元M及固化單元D時,可使一對手LH1、手LH2相對於該些單元而獨立地進退。例如,亦可為:手LH1用於將形成有成膜處理液膜10的基板W自液體處理單元M搬運至固化單元D時,手LH2用於將形成有固化膜10S的基板W自固化單元D搬運至液體處理單元M時。此時,考慮到來自成膜處理液膜10的滴液,保持經固化單元D處理後的基板W的手LH2較佳為配置在較保持形成有成膜處理液膜10的基板W的手LH1更上方的位置。The hand drive unit 90 can advance and retreat independently of the pair of hands LH1 and LH2 with respect to the units at least when entering the liquid processing unit M and the curing unit D. For example, when the hand LH1 is used to transport the substrate W on which the film formation processing liquid film 10 is formed from the liquid processing unit M to the curing unit D, the hand LH2 is used to self-cure the substrate W on which the cured film 10S is formed. When D is transported to the liquid processing unit M. At this time, in consideration of the dripping liquid from the film forming processing liquid film 10, the hand LH2 holding the substrate W processed by the curing unit D is preferably disposed in the hand LH1 which is disposed on the substrate W on which the film forming processing liquid film 10 is formed. The upper position.

固化單元D配置在液體處理單元M上,故局部搬運機器人LR是以如下方式運行:自液體處理單元M搬出基板W之後,使手LH上升至固化單元D的高度為止。又,局部搬運機器人LR是以如下方式運行:自固化單元D搬出基板W之後,使手LH下降至液體處理單元M的高度為止。Since the curing unit D is disposed in the liquid processing unit M, the local transfer robot LR operates in such a manner that after the substrate W is carried out from the liquid processing unit M, the hand LH is raised to the height of the curing unit D. Further, the local transport robot LR operates in such a manner that the hand LH is lowered to the height of the liquid processing unit M after the substrate W is carried out from the curing unit D.

局部搬運機器人LR亦可進而包括手加熱單元97A(臂加熱單元),所述手加熱單元97A(臂加熱單元)是對手LH1進行加熱,以對藉由液體處理單元M而形成有成膜處理液膜10的基板W進行保溫或加熱。手加熱單元97A亦可構成為使熱媒在形成於手LH1上的熱媒通路98A中循環。亦可取代具有此種熱媒通路98A的構成,而在手LH1中具備對手LH1進行加熱的加熱器(未圖示)。又,手加熱單元97A亦可構成為對局部搬運室C中所具備的加熱板99A進行加熱。此時,在手LH1未保持基板W的期間內,使手LH1與加熱板99A接觸。由此,在手LH1的非工作移動期間對手LH1進行加熱。藉由利用經所述加熱的手LH1搬運基板W,可在搬運過程中對基板W進行加熱,故而可對基板W進行加熱,從而進行成膜處理液膜10的乾燥固化。The local transport robot LR may further include a hand heating unit 97A (arm heating unit) that heats the opponent LH1 to form a film forming treatment liquid by the liquid processing unit M. The substrate W of the film 10 is kept warm or heated. The hand heating unit 97A may also be configured to circulate the heat medium in the heat medium passage 98A formed on the hand LH1. Instead of the configuration having such a heat medium passage 98A, a heater (not shown) that heats the opponent LH1 may be provided in the hand LH1. Further, the hand heating unit 97A may be configured to heat the heating plate 99A provided in the partial transfer chamber C. At this time, the hand LH1 is brought into contact with the heating plate 99A while the hand LH1 is not holding the substrate W. Thereby, the opponent LH1 is heated during the non-working movement of the hand LH1. By transporting the substrate W by the heated hand LH1, the substrate W can be heated during transportation, so that the substrate W can be heated to dry and solidify the film formation processing liquid film 10.

局部搬運機器人LR亦可進而包括手冷卻單元97B(臂冷卻單元),所述手冷卻單元97B(臂冷卻單元)是對手LH2進行冷卻,以利用固化單元D對形成有固化膜10S的基板W進行冷卻。手冷卻單元97B亦可構成為使冷媒在形成於手LH2上的冷媒通路98B中循環。亦可在手LH2中具備使手LH2冷卻的電子冷熱元件(未圖示),來替代此種具有冷媒通路98B的構成。又,手冷卻單元97B亦可構成為使局部搬運室C中所具備的冷卻板99B冷卻。此時,在手LH2未保持基板W的期間內,使手LH2與冷卻板99B接觸。由此,在手LH2的非工作移動期間使手LH2冷卻。藉由利用所述經冷卻的手LH2搬運基板W,可在搬運過程中使基板W冷卻,因此可將經充分冷卻的基板W搬入至液體處理單元M。此外,可縮短在固化單元D中的冷卻處理時間。The local transport robot LR may further include a hand cooling unit 97B (arm cooling unit) that cools the opponent LH2 to perform the substrate W on which the cured film 10S is formed by the curing unit D. cool down. The hand cooling unit 97B may be configured to circulate the refrigerant in the refrigerant passage 98B formed in the hand LH2. Instead of such a configuration having the refrigerant passage 98B, the hand LH2 may be provided with an electronic cooling element (not shown) for cooling the hand LH2. Further, the hand cooling unit 97B may be configured to cool the cooling plate 99B provided in the partial transfer chamber C. At this time, the hand LH2 is brought into contact with the cooling plate 99B while the hand LH2 is not holding the substrate W. Thereby, the hand LH2 is cooled during the non-working movement of the hand LH2. By transporting the substrate W by the cooled hand LH2, the substrate W can be cooled during transportation, so that the sufficiently cooled substrate W can be carried into the liquid processing unit M. Further, the cooling treatment time in the curing unit D can be shortened.

為了使保持於手LH1、手LH2上的基板W有效地加熱/冷卻,手LH1、手LH2亦可構成為與基板W的形狀相對應的板狀。此種板狀的手LH1、手LH2為了與自旋夾盤12進行基板W的交接,亦可具有周圍形成有缺口的帶缺口的板形狀,所述缺口是用以避開自旋夾盤12中所具備的夾盤銷(chuck pin)。In order to effectively heat/cool the substrate W held on the hand LH1 and the hand LH2, the hand LH1 and the hand LH2 may be formed in a plate shape corresponding to the shape of the substrate W. The plate-shaped hand LH1 and the hand LH2 may have a notched plate shape formed with a notch for the purpose of handing over the substrate W with the spin chuck 12, and the notch is for avoiding the spin chuck 12 The chuck pin is available in the middle.

例如,圖4所示,在局部搬運機器人LR的手LH(或無論手LH如何移動,與手LH的相對位置均不會大幅變化的活動部位)上,亦可配置供給用以對手LH進行洗滌的洗滌液的洗滌液噴嘴91。洗滌液噴嘴91與洗滌液配管92連接。在洗滌液配管92中,插裝有洗滌液閥93。洗滌液配管92與洗滌液供給源94連接。洗滌液供給源94供給用以對手LH進行洗滌的洗滌液。所述洗滌液較佳為與成膜用處理液具有親和性的液體,例如有機溶劑。For example, as shown in FIG. 4, the hand LH of the local transport robot LR (or the movable part that does not largely change the relative position of the hand LH regardless of the movement of the hand LH) may be arranged to be supplied for washing by the opponent LH. The washing liquid nozzle 91 of the washing liquid. The washing liquid nozzle 91 is connected to the washing liquid pipe 92. In the washing liquid pipe 92, a washing liquid valve 93 is inserted. The washing liquid pipe 92 is connected to the washing liquid supply source 94. The washing liquid supply source 94 supplies the washing liquid for washing with the opponent LH. The washing liquid is preferably a liquid having an affinity with a film forming treatment liquid, for example, an organic solvent.

如圖4所示,亦可取代在手LH上具備洗滌液噴嘴91,或者除了所述洗滌液噴嘴91,而在局部搬運室C內安裝洗滌液噴嘴91A。As shown in FIG. 4, instead of providing the washing liquid nozzle 91 on the hand LH, or in addition to the washing liquid nozzle 91, the washing liquid nozzle 91A may be attached to the partial transfer chamber C.

在局部搬運機器人LR未搬運基板W的期間內,藉由打開洗滌液閥93,可自洗滌液噴嘴91、洗滌液噴嘴91A噴出洗滌液,利用所述洗滌液對手LH進行洗滌。由此,可去除特別是附著在手LH上的成膜用處理液或其他物質,從而使手LH保持在潔淨的狀態。When the partial transfer robot LR is not transporting the substrate W, the washing liquid valve 93 is opened, and the washing liquid can be ejected from the washing liquid nozzle 91 and the washing liquid nozzle 91A, and washed by the washing liquid opponent LH. Thereby, the film forming processing liquid or the other substance which adheres especially to the hand LH can be removed, and the hand LH can be kept in a clean state.

局部搬運室C的底部160接收洗滌液。在底部160,連接有作為排液單元的排液配管161。底部160所接收到的洗滌液是通過排液配管161而排出。The bottom 160 of the partial transfer chamber C receives the wash liquid. At the bottom portion 160, a drain pipe 161 as a drain unit is connected. The washing liquid received at the bottom portion 160 is discharged through the drain pipe 161.

亦可設置有對局部搬運室C內供給惰性氣體的惰性氣體噴嘴165。在惰性氣體噴嘴165上,連接有惰性氣體配管166。在惰性氣體配管166的途中,插裝有惰性氣體閥167。在惰性氣體配管166上,連接有惰性氣體供給源168。惰性氣體供給源168供給氮氣等惰性氣體。藉由打開惰性氣體閥167,可對局部搬運室C內供給惰性氣體。由此,可促進洗滌後的手LH的乾燥。又,可對保持於手LH上的基板W的附近供給惰性氣體,故可促進特別是保持於手LH1上的基板W上的成膜處理液膜10的乾燥,從而促進所述固化。An inert gas nozzle 165 for supplying an inert gas to the partial transfer chamber C may be provided. An inert gas pipe 166 is connected to the inert gas nozzle 165. In the middle of the inert gas pipe 166, an inert gas valve 167 is inserted. An inert gas supply source 168 is connected to the inert gas pipe 166. The inert gas supply source 168 supplies an inert gas such as nitrogen. By opening the inert gas valve 167, an inert gas can be supplied to the local transfer chamber C. Thereby, drying of the hand LH after washing can be promoted. Moreover, the inert gas can be supplied to the vicinity of the substrate W held on the hand LH, so that the drying of the film formation processing liquid film 10 on the substrate W held on the hand LH1 can be promoted, thereby promoting the curing.

惰性氣體噴嘴165亦可配置在手LH(或無論手LH如何移動,與手LH的相對位置均不會大幅變化的活動部位)上。由此,可對手LH及保持於手LH上的基板W的表面有效率地供給惰性氣體。The inert gas nozzle 165 may also be disposed on the hand LH (or an active portion where the relative position of the hand LH does not largely change regardless of how the hand LH moves). Thereby, the inert gas can be efficiently supplied to the surface of the substrate L and the substrate W held on the hand LH.

再者,當將經固化單元D處理後的基板W藉由主搬運機器人CR而搬出時,局部搬運機器人LR只要具有手LH1及與手LH1相關的構成即可。即,可省略手LH2及與手LH2相關的構成。In addition, when the substrate W processed by the curing unit D is carried out by the main transport robot CR, the local transport robot LR may have a configuration relating to the hand LH1 and the hand LH1. That is, the configuration of the hand LH2 and the hand LH2 can be omitted.

又,當將經固化單元D處理後的基板W藉由局部搬運機器人LR而搬運時,亦可省略手LH2及與手LH2相關的構成。即,亦可利用相同的手LH1,進行形成有成膜處理液膜10的基板W的搬運、及形成有固化膜10S的基板W的搬運。此時,亦可在自液體處理單元M向固化單元D搬運基板W之後,對手LH1進行洗滌,其後,利用所述手LH1自固化單元D向液體處理單元M搬運表面形成有固化膜10S的基板W。Further, when the substrate W processed by the curing unit D is transported by the partial transport robot LR, the configuration relating to the hand LH2 and the hand LH2 may be omitted. In other words, the conveyance of the substrate W on which the film formation processing liquid film 10 is formed and the conveyance of the substrate W on which the cured film 10S is formed can be performed by the same hand LH1. At this time, after the substrate W is transported from the liquid processing unit M to the curing unit D, the opponent LH1 may be washed, and thereafter, the cured film 10S is formed by the hand LH1 from the curing unit D to the liquid processing unit M transport surface. Substrate W.

如以上所述,根據所述實施形態,在液體處理單元M的處理室中在基板W上形成有成膜處理液膜10之後,將所述基板W藉由局部搬運機器人LR而搬入至固化單元D的固化室51。因此,可避免主搬運機器人CR被成膜處理液污染,故而可抑制或防止所述成膜處理液轉移至藉由主搬運機器人CR而搬運的其他基板。又,可抑制或防止成膜處理液的氣氛籠罩在藉由主搬運機器人CR而搬運基板W的空間內,因此亦可避免成膜處理液的氣氛對基板W造成不良影響。如此一來,可提高基板處理品質。此外,無論主搬運機器人CR的運行狀態如何,均可利用局部搬運機器人LR,自處理室11向固化室51迅速搬運基板W。因此,可縮短搬運時間。As described above, according to the above embodiment, after the film formation processing liquid film 10 is formed on the substrate W in the processing chamber of the liquid processing unit M, the substrate W is carried into the curing unit by the partial transfer robot LR. The curing chamber 51 of D. Therefore, it is possible to prevent the main conveyance robot CR from being contaminated by the film formation processing liquid, and it is possible to suppress or prevent the film formation processing liquid from being transferred to another substrate conveyed by the main conveyance robot CR. Moreover, since the atmosphere of the film formation processing liquid can be suppressed or prevented from being enclosed in the space in which the substrate W is transported by the main transport robot CR, it is possible to prevent the atmosphere of the film formation processing liquid from adversely affecting the substrate W. In this way, the substrate processing quality can be improved. Further, regardless of the operating state of the main transport robot CR, the local transport robot LR can be used to quickly transport the substrate W from the processing chamber 11 to the curing chamber 51. Therefore, the handling time can be shortened.

特別是在所述實施形態中,主搬運機器人CR配置在主搬運室5內,局部搬運機器人LR配置在與主搬運室5隔離的局部搬運室C內。由此,可更確實地抑制或防止成膜處理液的氣氛籠罩著主搬運室5,故可抑制或防止藉由主搬運機器人CR而搬運的基板W受到成膜處理液的氣氛的影響。In particular, in the above embodiment, the main transport robot CR is disposed in the main transport chamber 5, and the local transport robot LR is disposed in the partial transport chamber C that is isolated from the main transport chamber 5. Thereby, the atmosphere of the film formation processing liquid can be more reliably suppressed or prevented from covering the main conveyance chamber 5, so that the substrate W conveyed by the main conveyance robot CR can be suppressed or prevented from being affected by the atmosphere of the film formation processing liquid.

又,在所述實施形態中,固化單元D藉由對固化室51內的處理空間50進行減壓,並且利用加熱器53H對基板W進行加熱,而使基板W上的成膜處理液膜10固化。因此,可使成膜處理液膜10迅速固化,而形成固化膜10S。在所述過程中,成膜處理液膜10一面進行固態化,一面進行體積收縮。由此,拉伸力作用至基板W表面的微粒等異物,從而可使異物自基板W表面剝離。Further, in the above-described embodiment, the curing unit D decompresses the processing space 50 in the curing chamber 51, and heats the substrate W by the heater 53H to form the film forming processing liquid film 10 on the substrate W. Cured. Therefore, the film forming treatment liquid film 10 can be quickly solidified to form the cured film 10S. In the process, the film formation treatment liquid film 10 is solidified while being subjected to volume shrinkage. Thereby, the tensile force acts on foreign matter such as fine particles on the surface of the substrate W, and foreign matter can be peeled off from the surface of the substrate W.

液體處理單元M在處理室11內具有自旋夾盤12及遮斷板19,其容積比較大。因此,使處理室11內的空間減壓而使成膜處理液膜10乾燥並不實際,即使可能,亦要耗費長時間來使大容積的空間減壓。與此相對,在所述實施形態中,將在液體處理單元M中已結束處理後的基板W,搬入至容積更小的固化室51,進行固化室51內的減壓乾燥處理。由此,可使成膜處理液膜10在短時間內固化。The liquid processing unit M has a spin chuck 12 and a shutter 19 in the processing chamber 11, and its volume is relatively large. Therefore, it is not practical to decompress the space in the processing chamber 11 to dry the film forming processing liquid film 10. Even if it is possible, it takes a long time to decompress the large volume space. On the other hand, in the above-described embodiment, the substrate W that has been processed in the liquid processing unit M is carried into the curing chamber 51 having a smaller volume, and the reduced-pressure drying treatment in the curing chamber 51 is performed. Thereby, the film formation processing liquid film 10 can be cured in a short time.

將形成有固化膜10S的基板W藉由局部搬運機器人LR或主搬運機器人CR,而自固化室51搬入至液體處理單元M的處理室11。此時,液體處理單元M作為去除固化膜10S的去除單元而發揮作用,處理室11作為提供進行去除處理的空間的去除室而發揮作用。液體處理單元M對基板W供給去除液而去除基板W上的固化膜10S。此時,固化膜10S藉由去除液而進行溶脹,產生體積膨脹。由此,拉伸力作用至基板W表面的異物,使異物自基板W表面剝離。經剝離的異物與固化膜10S一同被排除至基板W外。如此一來,達成去除基板W的表面的異物的洗滌處理。The substrate W on which the cured film 10S is formed is carried into the processing chamber 11 of the liquid processing unit M from the curing chamber 51 by the partial transfer robot LR or the main transfer robot CR. At this time, the liquid processing unit M functions as a removal unit for removing the cured film 10S, and the processing chamber 11 functions as a removal chamber that provides a space for performing the removal process. The liquid processing unit M supplies the removal liquid to the substrate W to remove the cured film 10S on the substrate W. At this time, the cured film 10S is swollen by the removal liquid to cause volume expansion. Thereby, the tensile force acts on the foreign matter on the surface of the substrate W, and the foreign matter is peeled off from the surface of the substrate W. The peeled foreign matter is excluded from the substrate W together with the cured film 10S. In this way, the washing process of removing the foreign matter on the surface of the substrate W is achieved.

當局部搬運機器人LR將已結束固化單元D中的固化處理的基板W自固化室51搬出,且搬入至液體處理單元M的處理室11,以進行去除處理時,可避免主搬運機器人DR自固化處理後的基板W受到影響。特別是在經固化單元D處理後的基板W處於高溫時,可避免主搬運機器人CR蓄積所述高溫的基板W所發出的熱。由此,可抑制或防止熱的影響波及藉由主搬運機器人CR而搬運的基板W。When the local transport robot LR carries out the solidification processing of the substrate W in the curing unit D from the curing chamber 51 and carries it into the processing chamber 11 of the liquid processing unit M for removal processing, the main handling robot DR can be prevented from self-curing. The treated substrate W is affected. In particular, when the substrate W processed by the curing unit D is at a high temperature, the main transfer robot CR can be prevented from accumulating heat generated by the high-temperature substrate W. Thereby, it is possible to suppress or prevent the influence of heat from affecting the substrate W conveyed by the main transport robot CR.

又,在所述實施形態中,局部搬運機器人LR具有一對手LH1、手LH2,藉由作為第1搬運臂的手LH1而自處理室11搬出基板W並搬入至固化室51,藉由作為第2搬運臂的手LH2而自固化室51搬出固化處理後的基板W,並搬入至處理室11以進行去除處理。因此,即使在手LH1上附著有成膜處理液,亦可抑制或防止所述處理液轉移至固化處理後的基板W。此外,在所述實施形態中,手LH2配置在較手LH1更上方的位置,因此可更進一步確實地抑制或防止藉由手LH1而保持的基板W上的成膜處理液附著在手LH2上。In the above-described embodiment, the local transport robot LR has a pair of hands LH1 and a hand LH2, and the substrate W is carried out from the processing chamber 11 by the hand LH1 as the first transport arm, and is carried into the curing chamber 51. 2 The hand LH2 of the arm is transported, and the substrate W after the curing process is carried out from the curing chamber 51, and carried into the processing chamber 11 to perform the removal process. Therefore, even if the film formation treatment liquid adheres to the hand LH1, the transfer of the treatment liquid to the substrate W after the curing treatment can be suppressed or prevented. Further, in the above-described embodiment, the hand LH2 is disposed at a position above the hand LH1, so that the film forming treatment liquid on the substrate W held by the hand LH1 can be more reliably suppressed or prevented from adhering to the hand LH2. .

又,在所述實施形態中,在局部搬運室C內,設置有洗滌液噴嘴91、洗滌液噴嘴91A,可自所述洗滌液噴嘴91、洗滌液噴嘴91A噴出洗滌液,對手LH進行洗滌。由此,可使手LH保持在潔淨的狀態,故而可一面抑制由手LH引起的基板W的污染,一面搬運基板W。而且,手LH的洗滌是在局部搬運室C內進行,故可抑制或防止洗滌液或成膜處理液的影響波及藉由主搬運機器人CR而搬運的基板W。Further, in the above-described embodiment, the washing liquid nozzle 91 and the washing liquid nozzle 91A are provided in the partial transfer chamber C, and the washing liquid can be ejected from the washing liquid nozzle 91 and the washing liquid nozzle 91A to be washed by the opponent LH. Thereby, the hand LH can be kept in a clean state, so that the substrate W can be transported while suppressing contamination of the substrate W by the hand LH. Further, since the washing of the hand LH is performed in the partial transfer chamber C, it is possible to suppress or prevent the influence of the washing liquid or the film forming processing liquid from affecting the substrate W transported by the main transport robot CR.

特別是在局部搬運機器人LR的手LH(或無論手LH如何移動,與手LH的相對位置均不會大幅變化的活動部位)上設置有洗滌液噴嘴91的情況下,可更確實地對手LH進行洗滌。因此,可避免成膜處理液等污染蓄積於手LH,從而可一面抑制成膜處理液所引起的污染,一面搬運基板W。又,可抑制或防止洗滌液或成膜處理液的影響波及藉由主搬運機器人CR而搬運的基板W。In particular, in the case where the hand LH of the partial transport robot LR (or the movable portion where the relative position of the hand LH does not largely change regardless of the movement of the hand LH) is provided, the washing liquid nozzle 91 is provided, and the opponent LH can be more surely Washing is carried out. Therefore, it is possible to prevent the contamination of the film formation processing liquid and the like from being accumulated in the hand LH, and it is possible to convey the substrate W while suppressing contamination by the film formation processing liquid. Further, it is possible to suppress or prevent the influence of the washing liquid or the film forming processing liquid from affecting the substrate W transported by the main transport robot CR.

而且,在所述實施形態中,局部搬運室C包括接收洗滌液的底部160、及排出底部160所接收的洗滌液的排液配管161。由此,可將對手LH進行洗滌後的洗滌液排出至局部搬運室C外,因而可使局部搬運室C內的氣氛保持潔淨。由此,可更進一步抑制成膜處理液氣氛對基板W的影響。Further, in the above embodiment, the partial transfer chamber C includes a bottom portion 160 that receives the washing liquid, and a drain pipe 161 that discharges the washing liquid received by the bottom portion 160. Thereby, the washing liquid after washing by the opponent LH can be discharged to the outside of the partial transfer chamber C, so that the atmosphere in the partial transfer chamber C can be kept clean. Thereby, the influence of the film formation processing liquid atmosphere on the substrate W can be further suppressed.

藉由所述實施形態而執行的基板處理方法包括:處理液膜形成步驟,對基板W的表面在處理室11內供給成膜處理液,在基板W的表面上形成成膜處理液膜10;第1局部搬運步驟,在所述處理液膜形成步驟之後,將基板W搬運至固化室51;固化膜形成步驟,在固化室51內使成膜處理液膜10固化而在所述基板W的表面上形成固化膜10S;第2局部搬運步驟,在所述固化膜形成步驟之後,將基板W搬運至作為去除室的處理室11;去除處理步驟,在所述處理室11(去除室)內將用以去除固化膜10S的去除液供給至基板W的表面;以及主搬運步驟,藉由主搬運機器人CR,將未處理的基板W搬入至處理室11,在去除處理步驟之後,自所述處理室11(去除室)搬出基板W。The substrate processing method performed by the embodiment includes a processing liquid film forming step of supplying a film forming processing liquid to the surface of the substrate W in the processing chamber 11, and forming a film forming processing liquid film 10 on the surface of the substrate W; In the first partial transport step, after the processing liquid film forming step, the substrate W is transported to the curing chamber 51; in the cured film forming step, the film forming processing liquid film 10 is cured in the curing chamber 51 to be on the substrate W. a cured film 10S is formed on the surface; a second partial transport step, after the cured film forming step, the substrate W is transported to the processing chamber 11 as a removal chamber; and the removal processing step is performed in the processing chamber 11 (removal chamber) The removal liquid for removing the cured film 10S is supplied to the surface of the substrate W; and the main conveyance step, the unprocessed substrate W is carried into the processing chamber 11 by the main transfer robot CR, after the removal processing step, The processing chamber 11 (removal chamber) carries out the substrate W.

在所述實施形態中,所述固化膜形成步驟包括利用作為加熱單元的加熱器53H對基板W進行加熱的加熱步驟。又,所述固化膜形成步驟包括使對基板W進行處理的固化處理空間50減壓的減壓步驟。In the above embodiment, the cured film forming step includes a heating step of heating the substrate W by the heater 53H as a heating unit. Further, the cured film forming step includes a pressure reducing step of depressurizing the solidification processing space 50 for processing the substrate W.

在所述主搬運步驟中,通過主搬運室5而搬運基板W,在所述第1局部搬運步驟中,通過與主搬運室5隔離的局部搬運室C而搬運基板W。In the main conveyance step, the substrate W is transported by the main transport chamber 5, and in the first partial transport step, the substrate W is transported by the partial transport chamber C that is separated from the main transport chamber 5.

所述第1局部搬運步驟及所述第2局部搬運步驟有時是藉由共同的局部搬運機器人LR來進行。此時,藉由局部搬運機器人LR的手LH1來進行所述第1局部搬運步驟,藉由局部搬運機器人LR的手LH2來進行所述第2局部搬運步驟。The first partial transport step and the second partial transport step may be performed by a common local transport robot LR. At this time, the first partial conveyance step is performed by the hand LH1 of the partial conveyance robot LR, and the second partial conveyance step is performed by the hand LH2 of the partial conveyance robot LR.

又,有時藉由局部搬運機器人LR來進行所述第1局部搬運步驟,藉由主搬運機器人CR來進行所述第2局部搬運步驟。Further, the first partial conveyance step may be performed by the partial conveyance robot LR, and the second partial conveyance step may be performed by the main conveyance robot CR.

又,所述實施形態的基板處理方法包括對局部搬運機器人LR的手LH供給洗滌液的手洗滌步驟(臂洗滌步驟)。Moreover, the substrate processing method of the above embodiment includes a hand washing step (arm washing step) of supplying the washing liquid to the hand LH of the partial conveying robot LR.

所述處理液膜形成步驟及所述去除處理步驟有時在共同的處理室11內進行。又,當所述處理液膜形成步驟及所述去除處理步驟在不同的液體處理單元M中進行時,該些處理是在不同的室內進行。The treatment liquid film forming step and the removal processing step are sometimes performed in a common processing chamber 11. Further, when the processing liquid film forming step and the removing processing step are performed in different liquid processing units M, the processing is performed in different chambers.

[第2實施形態] 圖5A是用以說明本發明的第2實施形態的基板處理裝置1A的構成的圖解性的俯視圖,圖5B是其立面圖。在圖5A及圖5B中,對所述圖1A及圖1B的各部的對應部分標註相同的參照符號。[Second Embodiment] Fig. 5A is a schematic plan view for explaining a configuration of a substrate processing apparatus 1A according to a second embodiment of the present invention, and Fig. 5B is an elevational view thereof. In FIGS. 5A and 5B, the same reference numerals are given to the corresponding portions of the respective portions of FIGS. 1A and 1B.

在本實施形態中,俯視時,在配置於主搬運室5的一側的兩個積層單元組G1、積層單元組G2之間配置有局部搬運室C,在所述局部搬運室C內配置有局部搬運機器人LR。同樣地,在配置於主搬運室5的另一側的兩個積層單元組G3、積層單元組G4之間配置有局部搬運室C,在所述局部搬運室C內配置有局部搬運機器人LR。構成積層單元組G1~積層單元組G4的多個單元及該些單元的積層狀態與第1實施形態的情況同樣。In the present embodiment, a partial transfer chamber C is disposed between the two stacked unit groups G1 and the laminated unit group G2 disposed on one side of the main transfer chamber 5 in a plan view, and the partial transfer chamber C is disposed in the partial transfer chamber C. Partial handling robot LR. Similarly, a partial transfer chamber C is disposed between the two build-up unit groups G3 and the build-up unit group G4 disposed on the other side of the main transfer chamber 5, and a partial transfer robot LR is disposed in the partial transfer chamber C. The plurality of cells constituting the laminated unit group G1 to the laminated unit group G4 and the laminated state of the respective units are the same as those in the first embodiment.

主搬運機器人CR與第1實施形態的情況同樣地,可進入至共計8個液體處理單元M遞交基板W,然後可與索引機器人IR之間交接基板W。又,液體處理單元M亦可構成為能夠進入至共計8個固化單元D而取出基板W。Similarly to the case of the first embodiment, the main transport robot CR can enter a total of eight liquid processing units M to deliver the substrate W, and then can transfer the substrate W to and from the index robot IR. Further, the liquid processing unit M may be configured to be able to enter the total of eight curing units D and take out the substrate W.

局部搬運機器人LR在本實施形態中,在第1層S1中具備兩個,在第2層S2中具備兩個。更具體而言,俯視時,在第1層S1中,在主搬運室5的兩側各配置有一個局部搬運機器人LR11、局部搬運機器人LR12。更進一步具體而言,在主搬運室5的一側,在第1層S1中,在液體處理單元M11、液體處理單元M12之間配置有一個局部搬運機器人LR11。在主搬運室5的另一側亦同樣地,在液體處理單元M13、液體處理單元M14之間配置有一個局部搬運機器人LR12。第2層S2中的兩個局部搬運機器人LR21、局部搬運機器人LR22亦是同樣地配置。局部搬運機器人LR11、局部搬運機器人LR12、局部搬運機器人LR21、局部搬運機器人LR22分別配置在局部搬運室C11、局部搬運室C12、局部搬運室C21、局部搬運室C22內。局部搬運室C形成有搬運空間,所述搬運空間被劃分成與主搬運室5分離(隔離)。In the present embodiment, the local transport robot LR includes two in the first layer S1 and two in the second layer S2. More specifically, in the first layer S1, one partial transfer robot LR11 and a partial transfer robot LR12 are disposed on both sides of the main transfer chamber 5 in plan view. More specifically, on the side of the main transfer chamber 5, in the first layer S1, a partial transfer robot LR11 is disposed between the liquid processing unit M11 and the liquid processing unit M12. Similarly to the other side of the main transfer chamber 5, a partial transfer robot LR12 is disposed between the liquid processing unit M13 and the liquid processing unit M14. The two partial transport robots LR21 and the local transport robot LR22 in the second layer S2 are also arranged in the same manner. The local transport robot LR11, the local transport robot LR12, the local transport robot LR21, and the local transport robot LR22 are disposed in the partial transport chamber C11, the partial transport chamber C12, the partial transport chamber C21, and the partial transport chamber C22, respectively. The partial transport chamber C is formed with a transport space that is divided into (separated) from the main transport chamber 5.

在第1層S1中,配置於主搬運室5的一側的局部搬運機器人LR11被兩個液體處理單元M11、液體處理單元M12所共用。In the first layer S1, the partial transfer robot LR11 disposed on one side of the main transfer chamber 5 is shared by the two liquid processing units M11 and the liquid processing unit M12.

即,局部搬運機器人LR11取出已結束在接近載體保持部2之側的液體處理單元M11中的處理的基板W,沿垂直方向(更具體而言為上方)進行搬運,而搬入至所述液體處理單元M11之上的固化單元D11。又,局部搬運機器人LR11取出已結束在遠離載體保持部2之側的液體處理單元M12中的處理的基板W,沿垂直方向(更具體而言為上方)進行搬運,而搬入至所述液體處理單元M12之上的固化單元D12。In other words, the local transport robot LR11 takes out the substrate W that has been processed in the liquid processing unit M11 that is close to the side of the carrier holding unit 2, and transports it in the vertical direction (more specifically, above), and carries it into the liquid processing. Curing unit D11 above unit M11. Further, the local transport robot LR11 takes out the substrate W that has been processed in the liquid processing unit M12 that is away from the carrier holding portion 2, and transports it in the vertical direction (more specifically, upward), and carries it into the liquid processing. Curing unit D12 above unit M12.

局部搬運機器人LR11亦可將已結束在接近載體保持部2之側的液體處理單元M11中的處理的基板W,搬運至遠離載體保持部2之側的液體處理單元M12之上的固化單元D12。同樣地,局部搬運機器人LR11亦可將已結束在遠離載體保持部2之側的液體處理單元M12中的處理的基板W,搬運至接近載體保持部2之側的液體處理單元M11之上的固化單元D11。The local transport robot LR11 can also transport the processed substrate W that has finished in the liquid processing unit M11 close to the carrier holding portion 2 to the curing unit D12 on the liquid processing unit M12 that is away from the carrier holding portion 2. Similarly, the local transport robot LR11 can also transport the processed substrate W in the liquid processing unit M12 that has finished the side away from the carrier holding portion 2 to the solidification on the liquid processing unit M11 on the side close to the carrier holding portion 2. Unit D11.

若進一步加以一般化,則局部搬運機器人LR11可進入至在第1層S1中配置在主搬運室5的一側的兩個液體處理單元M11、液體處理單元M12,以及分別配置在該些液體處理單元M11、液體處理單元M12之上的兩個固化單元D11、固化單元D12。而且,將一個在液體處理單元M11、液體處理單元M12中已結束處理的基板W藉由局部搬運機器人LR11搬入至兩個固化單元D11、固化單元D12中的任一者,而受到用以使所述表面的成膜處理液膜固化的固化處理。Further generalization, the local transport robot LR11 can enter the two liquid processing units M11 and the liquid processing unit M12 disposed on one side of the main transport chamber 5 in the first layer S1, and are respectively disposed in the liquid processing. The unit M11, the two curing units D11 above the liquid processing unit M12, and the curing unit D12. Further, a substrate W that has been processed in the liquid processing unit M11 and the liquid processing unit M12 is carried into the two curing units D11 and the curing unit D12 by the partial transfer robot LR11, and is used to make the substrate A curing treatment for curing the film forming treatment liquid film on the surface.

另一方面,局部搬運機器人LR11取出已結束在接近載體保持部2之側的固化單元D11中的固化處理的基板W,沿垂直方向(更具體而言下方)進行搬運,而搬入至所述固化單元D11下的液體處理單元M11。又,局部搬運機器人LR11取出已結束在遠離載體保持部2之側的固化單元D12中的固化處理的基板W,沿垂直方向(更具體而言下方)進行搬運,而搬入至所述固化單元D12下的液體處理單元M12。On the other hand, the local transport robot LR11 takes out the solidified substrate W that has been completed in the curing unit D11 on the side close to the carrier holding portion 2, and transports it in the vertical direction (more specifically, lower), and carries it into the curing. Liquid processing unit M11 under unit D11. Further, the local transport robot LR11 takes out the solidified substrate W that has been completed in the curing unit D12 that is away from the carrier holding portion 2, and transports it in the vertical direction (more specifically, downward), and carries it into the curing unit D12. Lower liquid processing unit M12.

局部搬運機器人LR11亦可將已結束在接近載體保持部2之側的固化單元D11中的處理的基板W,搬運至遠離載體保持部2之側的液體處理單元M12下的液體處理單元M12。同樣地,局部搬運機器人LR11亦可將已結束在遠離載體保持部2之側的固化單元D12中的處理的基板W搬運至接近載體保持部2之側的固化單元D11下的液體處理單元M11。更一般而言,將一個已結束固化單元D11、固化單元D12中的固化處理的基板W,藉由局部搬運機器人LR11,而搬入至兩個液體處理單元M11、液體處理單元M12中的任一者,從而受到用以去除所述表面的固化膜的去除處理。The local transport robot LR11 can also transport the processed substrate W that has finished in the curing unit D11 close to the carrier holding portion 2 to the liquid processing unit M12 under the liquid processing unit M12 that is away from the carrier holding portion 2. Similarly, the local transfer robot LR11 can also transport the processed substrate W that has finished the curing unit D12 on the side away from the carrier holding portion 2 to the liquid processing unit M11 under the curing unit D11 on the side close to the carrier holding portion 2. More generally, the substrate W that has been cured in the curing unit D11 and the curing unit D12 is carried into the liquid handling unit M11 and the liquid processing unit M12 by the partial transfer robot LR11. And thus subjected to a removal treatment of the cured film for removing the surface.

在第1層S1中配置於主搬運室5的另一側的局部搬運機器人LR12的動作亦是同樣。即,局部搬運機器人LR12是可進入至兩個液體處理單元M13、液體處理單元M14及兩個固化單元D13、固化單元D14而構成,對該些單元進行與主搬運室5的相反側的局部搬運機器人LR11同樣的動作。The operation of the local transport robot LR12 disposed on the other side of the main transport chamber 5 in the first layer S1 is also the same. That is, the local transfer robot LR12 is configured to be able to enter the two liquid processing units M13, the liquid processing unit M14, the two curing units D13, and the curing unit D14, and perform partial transportation on the opposite side of the main transfer chamber 5 from the units. The same action of the robot LR11.

配置在第2層S2中的局部搬運機器人LR21、局部搬運機器人LR22的動作亦是同樣。即,局部搬運機器人LR21是可進入至兩個液體處理單元M21、液體處理單元M22及兩個固化單元D21、固化單元D22而構成,對該些單元進行與局部搬運機器人LR11同樣的動作。又,局部搬運機器人LR22是可進入至兩個液體處理單元M23、液體處理單元M24及兩個固化單元D23、固化單元D24而構成,對該些單元進行與局部搬運機器人LR11同樣的動作。The operations of the local transport robot LR21 and the local transport robot LR22 disposed in the second layer S2 are also the same. In other words, the local transport robot LR21 is configured to be able to enter the two liquid processing units M21, the liquid processing unit M22, the two curing units D21, and the curing unit D22, and performs the same operations as those of the local transport robot LR11. Further, the local transport robot LR22 is configured to be able to enter the two liquid processing units M23, the liquid processing unit M24, the two curing units D23, and the curing unit D24, and performs the same operations as those of the local transport robot LR11.

配置在主搬運室5的一側的兩個局部搬運機器人LR11、局部搬運機器人LR21在本實施形態中,分別配置在俯視時相重合的兩個局部搬運室C11、局部搬運室C21內。同樣地,配置在主搬運室5的另一側的兩個局部搬運機器人LR12、局部搬運機器人LR22在本實施形態中,分別配置在俯視時相重合的兩個局部搬運室C12、局部搬運室C22內。In the present embodiment, the two partial transport robots LR11 and the local transport robots LR21 disposed on one side of the main transport chamber 5 are disposed in the two partial transport chambers C11 and the partial transport chambers C21 which are overlapped in plan view. Similarly, in the present embodiment, the two partial transport robots LR12 and the local transport robot LR22 disposed on the other side of the main transport chamber 5 are respectively disposed in two partial transport chambers C12 and a partial transport chamber C22 which are overlapped in plan view. Inside.

亦可將上下重合的兩個局部搬運室C11、局部搬運室C21及局部搬運室C12、局部搬運室C22設為上下連通的一個局部搬運室。而且,亦可在所述一個局部搬運室C內配置一個局部搬運機器人LR。The two partial transfer chambers C11, the partial transfer chamber C21, the partial transfer chamber C12, and the partial transfer chamber C22, which are vertically overlapped, may be a partial transfer chamber that communicates vertically. Further, a partial transfer robot LR may be disposed in the one partial transfer chamber C.

此時,在主搬運室5的一側,相對於局部搬運室C在載體保持部2側,配置有依此順序積層著液體處理單元M11、固化單元D11、液體處理單元M21及固化單元D21的積層單元組G1,且在遠離載體保持部2之側,亦配置有依此順序積層著液體處理單元M12、固化單元D12、液體處理單元M22及固化單元D22的積層單元組G2。配置在局部搬運室C內的一個局部搬運機器人LR可進入至構成該些一對積層單元組G1、積層單元組G2的共計8個單元。At this time, on the side of the main transfer chamber 5, on the side of the carrier holding portion 2 with respect to the partial transfer chamber C, the liquid processing unit M11, the curing unit D11, the liquid processing unit M21, and the curing unit D21 are stacked in this order. The laminated unit group G1 is disposed on the side away from the carrier holding portion 2, and a laminated unit group G2 in which the liquid processing unit M12, the curing unit D12, the liquid processing unit M22, and the curing unit D22 are laminated in this order. One of the partial transfer robots LR disposed in the partial transfer chamber C can enter a total of eight units constituting the pair of the buildup unit group G1 and the buildup unit group G2.

此時,局部搬運機器人LR亦可以如下方式運行:將在某個液體處理單元M11、液體處理單元M12、液體處理單元M21、液體處理單元M22中已結束成膜處理液膜形成處理的一個基板W搬入至積層於其正上方的固化單元D11、固化單元D12、固化單元D21、固化單元D22。又,局部搬運機器人LR亦可將在某個液體處理單元M11、液體處理單元M12、液體處理單元M21、液體處理單元M22中已結束成膜處理液膜形成處理的一個基板W,搬入至可進入的4個固化單元D11、固化單元D12、固化單元D21、固化單元D22之中的任意一個。一般而言,可藉由將基板W搬入至不用於處理的固化單元D,來提高生產率。At this time, the local transfer robot LR can also be operated in such a manner that a substrate W that has completed the film forming process liquid film forming process in a certain liquid processing unit M11, liquid processing unit M12, liquid processing unit M21, and liquid processing unit M22 It is carried into the curing unit D11, the curing unit D12, the curing unit D21, and the curing unit D22 which are laminated directly above it. Further, the local transport robot LR can also carry in one of the substrates W that have completed the film forming process liquid film forming process in the liquid processing unit M11, the liquid processing unit M12, the liquid processing unit M21, and the liquid processing unit M22. Any one of the four curing units D11, the curing unit D12, the curing unit D21, and the curing unit D22. In general, productivity can be improved by carrying the substrate W into the curing unit D that is not used for processing.

又,局部搬運機器人LR亦可以如下方式運行:將在某個固化單元D11、固化單元D12、固化單元D21、固化單元D22已結束固化處理的一個基板W搬入至積層於其正下方的液體處理單元M11、液體處理單元M12、液體處理單元M21、液體處理單元M22。又,局部搬運機器人LR亦可將在某個固化單元D11、固化單元D12、固化單元D21、固化單元D22中已結束固化處理的一個基板W,搬入至可進入的4個液體處理單元M11、液體處理單元M12、液體處理單元M21、液體處理單元M22之中的任意一個。一般而言,可藉由將基板W搬入至不用於處理的液體處理單元M進行去除處理,來提高生產率。Further, the local transfer robot LR can also be operated in such a manner that a substrate W in which a curing unit D11, a curing unit D12, a curing unit D21, and a curing unit D22 have finished curing is carried into a liquid processing unit laminated directly below it. M11, liquid processing unit M12, liquid processing unit M21, and liquid processing unit M22. Further, the local transport robot LR can carry one of the substrates W that have been subjected to the curing treatment in the curing unit D11, the curing unit D12, the curing unit D21, and the curing unit D22 to the four liquid processing units M11 and the liquid that can be entered. Any one of the processing unit M12, the liquid processing unit M21, and the liquid processing unit M22. In general, productivity can be improved by carrying out removal processing by moving the substrate W to the liquid processing unit M that is not used for processing.

關於主搬運室5的另一側,亦具有同樣的構成,可使被兩個積層單元組G3、積層單元組G4共用的一個局部搬運機器人LR同樣地運行。The other side of the main transport chamber 5 has the same configuration, and a partial transport robot LR shared by the two laminated unit groups G3 and the laminated unit group G4 can be operated in the same manner.

如自圖1A及圖5A的比較可知,藉由本實施形態的構成,可縮小基板處理裝置1A的佔用面積(足跡(footprint))。As can be seen from the comparison between FIG. 1A and FIG. 5A, the configuration of the present embodiment can reduce the footprint (footprint) of the substrate processing apparatus 1A.

再者,已結束固化單元D中的固化處理的基板W的搬運亦可由主搬運機器人CR來進行。此時,主搬運機器人CR亦可以如下方式運行:將所述基板W搬入至任意的液體處理單元M而進行去除處理。Further, the conveyance of the substrate W that has finished the curing treatment in the curing unit D may be performed by the main conveyance robot CR. At this time, the main transport robot CR can also be operated by carrying the substrate W into an arbitrary liquid processing unit M and performing a removal process.

[第3實施形態] 圖6A是用以說明本發明的第3實施形態的基板處理裝置1B的構成的圖解性的俯視圖,圖6B是其立面圖。在本實施形態的基板處理裝置1B中,單元的配置形成有包含第1層S1、第2層S2及第3層S3的三層構造。[Embodiment 3] FIG. 6A is a schematic plan view for explaining a configuration of a substrate processing apparatus 1B according to a third embodiment of the present invention, and FIG. 6B is an elevational view thereof. In the substrate processing apparatus 1B of the present embodiment, a three-layer structure including the first layer S1, the second layer S2, and the third layer S3 is formed in the cell arrangement.

在本實施形態中,俯視時,在主搬運室5的一側沿主搬運室5配置有3個積層單元組G11、積層單元組G12、積層單元組G13,在主搬運室5的另一側沿主搬運室5配置有3個積層單元組G14、積層單元組G15、積層單元組G16。In the present embodiment, three laminated unit groups G11, a laminated unit group G12, and a laminated unit group G13 are disposed along the main transport chamber 5 on one side of the main transport chamber 5 in the plan view, and the other side of the main transport chamber 5 is disposed. Three laminated unit groups G14, a laminated unit group G15, and a laminated unit group G16 are disposed along the main transfer chamber 5.

積層單元組G11是自下方起依次積層3個液體處理單元M11、液體處理單元M21、液體處理單元M31而構成。積層單元組G13是自下方起依次積層3個液體處理單元M12、液體處理單元M22、液體處理單元M32而構成。配置在積層單元組G11、積層單元組G13之間的積層單元組G12是自下方起依次積層6個固化單元D11、固化單元D12、固化單元D21、固化單元D22、固化單元D31、固化單元D32而構成。在積層單元組G11、積層單元組G13之間,進而自下方起依次積層地配置有局部搬運室C11、局部搬運室C21、局部搬運室C31,在該些局部搬運室之中,分別配置有局部搬運機器人LR11、局部搬運機器人LR21、局部搬運機器人LR31。局部搬運室C11、局部搬運室C21、局部搬運室C31在本實施形態中,相對於積層單元組G12,配置在與主搬運室5相反之側。The buildup unit group G11 is configured by stacking three liquid processing units M11, a liquid processing unit M21, and a liquid processing unit M31 in this order from the bottom. The buildup unit group G13 is configured by stacking three liquid processing units M12, a liquid processing unit M22, and a liquid processing unit M32 in this order from the bottom. The build-up cell group G12 disposed between the build-up cell group G11 and the build-up cell group G13 is formed by stacking six curing cells D11, curing cells D12, curing cells D21, curing cells D22, curing cells D31, and curing cells D32 in this order from the bottom. Composition. Between the laminated unit group G11 and the laminated unit group G13, a partial transfer chamber C11, a partial transfer chamber C21, and a partial transfer chamber C31 are disposed in this order from the bottom, and a part of each of the partial transfer chambers is disposed. The transport robot LR11, the local transport robot LR21, and the local transport robot LR31. In the present embodiment, the partial transfer chamber C11, the partial transfer chamber C21, and the partial transfer chamber C31 are disposed on the opposite side of the main transfer chamber 5 with respect to the buildup unit group G12.

積層單元組G14是自下方起依次積層3個液體處理單元M13、液體處理單元M23、液體處理單元M33而構成。積層單元組G16是自下方起依次積層3個液體處理單元M14、液體處理單元M24液體處理單元M34而構成。配置在積層單元組G14、積層單元組G16之間的積層單元組G15是自下方起依次積層6個固化單元D13、固化單元D14、固化單元D23、固化單元D24、固化單元D33、固化單元D34而構成。在積層單元組G14、積層單元組G16之間,進而自下方起依次積層地配置有局部搬運室C12、局部搬運室C22、局部搬運室C32,在該些局部搬運室之中,分別配置有局部搬運機器人LR12、局部搬運機器人LR22、局部搬運機器人LR32。局部搬運室C12、局部搬運室C22、局部搬運室C32在本實施形態中,相對於積層單元組G15,配置在與主搬運室5相反之側。The buildup unit group G14 is configured by stacking three liquid processing units M13, a liquid processing unit M23, and a liquid processing unit M33 in this order from the bottom. The buildup unit group G16 is configured by stacking three liquid processing units M14 and a liquid processing unit M24 liquid processing unit M34 in this order from the bottom. The build-up cell group G15 disposed between the build-up cell group G14 and the build-up cell group G16 is formed by stacking six curing cells D13, curing cells D14, curing cells D23, curing cells D24, curing cells D33, and curing cells D34 in this order from the bottom. Composition. Between the laminated unit group G14 and the laminated unit group G16, a partial transfer chamber C12, a partial transfer chamber C22, and a partial transfer chamber C32 are disposed in this order from the bottom, and a part of each of the partial transfer chambers is disposed. The transport robot LR12, the local transport robot LR22, and the local transport robot LR32. In the present embodiment, the partial transfer chamber C12, the partial transfer chamber C22, and the partial transfer chamber C32 are disposed on the opposite side of the main transfer chamber 5 with respect to the buildup unit group G15.

若著眼於各層的構成,則在第1層S1中,在主搬運室5的一側,沿主搬運室5的俯視時的長邊方向,配置有一對液體處理單元M11、液體處理單元M12,在所述一對液體處理單元M11、液體處理單元M12之間,配置有一對固化單元D11、固化單元D12及一個局部搬運機器人LR11。一對固化單元D11、固化單元D12在本實施形態中,為上下積層。固化單元D11、固化單元D12配置在接近主搬運室5的位置上,在相對於固化單元D11、固化單元D12與主搬運室5相反之側配置有局部搬運機器人LR11。In the first layer S1, a pair of liquid processing units M11 and a liquid processing unit M12 are disposed on the side of the main transport chamber 5 along the longitudinal direction of the main transport chamber 5 in a plan view. A pair of curing unit D11, curing unit D12, and one partial conveying robot LR11 are disposed between the pair of liquid processing unit M11 and liquid processing unit M12. In the present embodiment, the pair of curing unit D11 and curing unit D12 are vertically stacked. The curing unit D11 and the curing unit D12 are disposed at positions close to the main transfer chamber 5, and the partial transfer robot LR11 is disposed on the opposite side of the curing unit D11 and the curing unit D12 from the main transfer chamber 5.

局部搬運機器人LR11配置在局部搬運室C11內。局部搬運機器人LR11可進入至一對液體處理單元M11、液體處理單元M12及一對固化單元D11、固化單元D12。The local transport robot LR11 is disposed in the partial transport chamber C11. The local handling robot LR11 can enter a pair of liquid processing units M11, a liquid processing unit M12, a pair of curing units D11, and a curing unit D12.

局部搬運機器人LR11是以如下方式運行:搬出一個在液體處理單元M11、液體處理單元M12中已結束成膜處理液膜形成處理的基板W,且將所述基板W搬入至一對固化單元D11、固化單元D12中的任一者。又,局部搬運機器人LR11是以如下方式運行:搬出一個在固化單元D11、固化單元D12中已結束固化處理的基板W,且將所述基板W搬入至一對液體處理單元M11、液體處理單元M12中的任一者進行去除處理。The local transfer robot LR11 operates by moving out a substrate W that has completed the film forming process liquid film forming process in the liquid processing unit M11 and the liquid processing unit M12, and carries the substrate W into a pair of curing units D11, Any of the curing units D12. Further, the local transfer robot LR11 operates in such a manner that a substrate W that has been subjected to the curing process in the curing unit D11 and the curing unit D12 is carried out, and the substrate W is carried into a pair of liquid processing unit M11 and liquid processing unit M12. Any one of them performs a removal process.

在第1層S1中,主搬運室5的另一側的單元配置亦是同樣。即,在主搬運室5的另一側,沿主搬運室5的俯視時的長邊方向,配置有一對液體處理單元M13、液體處理單元M14,在所述一對液體處理單元M13、液體處理單元M14之間配置有一對固化單元D13、固化單元D14及一個局部搬運機器人LR12。一對固化單元D13、固化單元D14為上下積層。該些固化單元D13、固化單元D14配置在接近主搬運室5的位置上,在相對於固化單元D13、固化單元D14與主搬運室5相反之側劃分出局部搬運室C12,在此處收容有局部搬運機器人LR12。In the first layer S1, the unit arrangement on the other side of the main transport chamber 5 is also the same. In other words, on the other side of the main transport chamber 5, a pair of liquid processing units M13 and a liquid processing unit M14 are disposed along the longitudinal direction of the main transport chamber 5 in a plan view, and the pair of liquid processing units M13 and liquid processing are disposed. A pair of curing unit D13, curing unit D14, and a partial transfer robot LR12 are disposed between the units M14. The pair of curing unit D13 and the curing unit D14 are stacked one on top of the other. The curing unit D13 and the curing unit D14 are disposed at a position close to the main transfer chamber 5, and a partial transfer chamber C12 is defined on the opposite side of the curing unit D13 and the curing unit D14 from the main transfer chamber 5, and is housed therein. Partial handling robot LR12.

局部搬運機器人LR12可進入至一對液體處理單元M13、液體處理單元M14及一對固化單元D13、固化單元D14。局部搬運機器人LR12是以如下方式運行:搬出一個在液體處理單元M13、液體處理單元M14中已結束處理的基板W,將所述基板W搬入至一對固化單元D13、固化單元D14中的任一者。又,局部搬運機器人LR12是以如下方式運行:搬出一個在固化單元D13、固化單元D14中已結束固化處理的基板W,將所述基板W搬入至一對液體處理單元M13、液體處理單元M14中的任一者進行去除處理。The local handling robot LR12 can enter a pair of liquid processing units M13, a liquid processing unit M14, a pair of curing units D13, and a curing unit D14. The local transport robot LR12 operates in such a manner that a substrate W that has been processed in the liquid processing unit M13 and the liquid processing unit M14 is carried out, and the substrate W is carried into any one of a pair of curing unit D13 and curing unit D14. By. Further, the local transfer robot LR12 operates in such a manner that a substrate W that has been subjected to the curing process in the curing unit D13 and the curing unit D14 is carried out, and the substrate W is carried into a pair of liquid processing unit M13 and liquid processing unit M14. Either of them is subjected to removal processing.

第2層S2及第3層S3的單元配置及各層的局部搬運機器人LR的動作亦是同樣。第2層S2包括配置在主搬運室5的一側的一對液體處理單元M21、液體處理單元M22、一對固化單元D21、固化單元D22及一個局部搬運機器人LR21,進而包含配置在主搬運室5的另一側的一對液體處理單元M23、液體處理單元M24、一對固化單元D23、固化單元D24及一個局部搬運機器人LR22。第3層S3包含配置在主搬運室5的一側的一對液體處理單元M31、液體處理單元M32、一對固化單元D31、固化單元D32及一個局部搬運機器人LR31,進而包含配置在主搬運室5的另一側的一對液體處理單元M33、液體處理單元M34、一對固化單元D33、固化單元D34及一個局部搬運機器人LR32。The unit arrangement of the second layer S2 and the third layer S3 and the operation of the local transport robot LR of each layer are also the same. The second layer S2 includes a pair of liquid processing units M21, a liquid processing unit M22, a pair of curing units D21, a curing unit D22, and a partial transfer robot LR21 disposed on one side of the main transfer chamber 5, and further includes a main transfer chamber. A pair of liquid processing units M23, a liquid processing unit M24, a pair of curing units D23, a curing unit D24, and a partial transfer robot LR22 on the other side of the fifth. The third layer S3 includes a pair of liquid processing units M31, a liquid processing unit M32, a pair of curing units D31, a curing unit D32, and a partial transfer robot LR31 disposed on one side of the main transfer chamber 5, and further includes a main transfer chamber. A pair of liquid processing units M33, a liquid processing unit M34, a pair of curing units D33, a curing unit D34, and a partial transfer robot LR32 on the other side of 5.

如上所述,在本實施形態中,液體處理單元M與固化單元D為平面地配置(水平配置),由此可一面抑制基板處理裝置1B的總高,一面具備多個液體處理單元M及固化單元D。As described above, in the present embodiment, the liquid processing unit M and the curing unit D are arranged in a plane (horizontal arrangement), whereby a plurality of liquid processing units M and curing can be provided while suppressing the total height of the substrate processing apparatus 1B. Unit D.

配置在主搬運室5的一側的3個局部搬運機器人LR11、局部搬運機器人LR21、局部搬運機器人LR31在本實施形態中,俯視時,分別配置於重合的3個局部搬運室C11、局部搬運室C21、局部搬運室C31內。亦可將所述3個局部搬運室C11、局部搬運室C21、局部搬運室C31設為上下連通的一個局部搬運室C。又,亦可在所述一個局部搬運室C內配置一個局部搬運機器人LR。此時,相對於局部搬運室C在載體保持部2側,配置有積層著3個液體處理單元M11、液體處理單元M21、液體處理單元M31的積層單元組G11,在遠離載體保持部2之側,配置有積層著3個液體處理單元M12、液體處理單元M22、液體處理單元M32的積層單元組G13,在主搬運室5側配置有積層著6個固化單元D11、固化單元D12、固化單元D21、固化單元D22、燥單元D31、固化單元D32的積層單元組G12。配置在局部搬運室C內的一個局部搬運機器人LR可進入至構成該些3個積層單元組G11~積層單元組G13的共計12個單元。In the present embodiment, the three partial transport robots LR11, the local transport robot LR21, and the local transport robot LR31 disposed on one side of the main transport chamber 5 are disposed in the three partial transport chambers C11 and the partial transport chambers which are overlapped in plan view. C21, in the local transfer chamber C31. The three partial transfer chambers C11, the partial transfer chamber C21, and the partial transfer chamber C31 may be a partial transfer chamber C that communicates vertically. Further, a partial transfer robot LR may be disposed in the one partial transfer chamber C. At this time, the laminated unit group G11 in which the three liquid processing units M11, the liquid processing unit M21, and the liquid processing unit M31 are stacked is disposed on the side of the carrier holding portion 2 with respect to the partial transfer chamber C, on the side away from the carrier holding portion 2 A stacking unit group G13 in which three liquid processing units M12, a liquid processing unit M22, and a liquid processing unit M32 are stacked is disposed, and six curing units D11, a curing unit D12, and a curing unit D21 are disposed on the main transfer chamber 5 side. The layering unit group G12 of the curing unit D22, the drying unit D31, and the curing unit D32. One of the partial transfer robots LR disposed in the partial transfer chamber C can enter a total of 12 units constituting the three stacked unit groups G11 to G13.

此時,局部搬運機器人LR亦可以如下方式運行:將在某個液體處理單元M中已結束成膜處理液膜形成的一個基板W搬入至位於同一層內的固化單元D。又,局部搬運機器人LR亦可以如下方式運行:將在某個固化單元D中已結束固化處理的一個基板W搬入至位於同一層內的液體處理單元M,以進行去除處理。又,局部搬運機器人LR亦可將在某個液體處理單元M中已結束成膜處理液膜形成的一個基板W,搬入至可進入的6個固化單元D之中的任意一個。一般而言,藉由將基板W搬入至不用於處理的固化單元D,可提高生產率。而且,局部搬運機器人LR亦可將在某個固化單元D中已結束固化處理的一個基板W搬入至可進入的6個液體處理單元M之中的任意一個,以進行去除處理。一般而言,藉由將基板W搬入至不用於處理的液體處理單元M,可提高生產率。當然,關於主搬運室5的相反側,亦可設為同樣的構成。At this time, the local transfer robot LR can also be operated by moving one substrate W, which has been formed in the liquid processing unit M, the film formation process liquid film, to the curing unit D located in the same layer. Further, the local transfer robot LR can also be operated by moving one substrate W that has been subjected to the curing process in a certain curing unit D to the liquid processing unit M located in the same layer to perform the removal process. Further, the local transport robot LR may carry one of the substrates W having completed the film formation process liquid film in a certain liquid processing unit M into any one of the six hardening units D that can be accessed. In general, productivity can be improved by carrying the substrate W into the curing unit D that is not used for processing. Further, the local transport robot LR can also carry one of the six liquid processing units M that have been subjected to the curing process in a certain curing unit D to the one of the six liquid processing units M that can be accessed to perform the removal process. In general, productivity can be improved by carrying the substrate W into the liquid processing unit M that is not used for processing. Of course, the opposite side of the main transfer chamber 5 may have the same configuration.

如自圖1A及圖6A的比較可知,藉由本實施形態的構成,可縮小基板處理裝置1B的佔用面積(足跡)。此外,如自圖5B及圖6B等的比較可知,藉由本實施形態的構成,可將更多的單元配置在相同高度的空間內。換而言之,能夠以更低的高度構成相同單元數量的基板處理裝置。As can be seen from the comparison between FIG. 1A and FIG. 6A, the configuration of the present embodiment can reduce the footprint (footprint) of the substrate processing apparatus 1B. Further, as can be seen from the comparison of FIG. 5B and FIG. 6B and the like, according to the configuration of the present embodiment, more cells can be arranged in a space of the same height. In other words, it is possible to constitute the same number of substrate processing apparatuses at a lower height.

[第4實施形態] 圖7是用以說明本發明的第4實施形態的基板處理裝置1C的構成的圖解性的立面圖,表示主搬運室的一側的構成。在主搬運室5(參照圖5A等)的一側,配置有一對積層單元組G21、積層單元組G22,在該些積層單元組G21、積層單元組G22之間配置有局部搬運機器人LR1、局部搬運機器人LR2。在本例中,一個積層單元組G21是將3個液體處理單元M1、液體處理單元M2、液體處理單元M3積層成三層而構成。另一個積層單元組G22包含一個液體處理單元M4、以及依次積層於所述液體處理單元M4上的4個固化單元D1~固化單元D4。在主搬運室5的相反側亦設置有同樣的構成。主搬運機器人CR可進入至配置在主搬運室5的一側的4個液體處理單元M1~液體處理單元M4,並且可進入至同樣地配置於主搬運室5的相反側的4個液體處理單元。主搬運機器人CR亦可構成為可進入至配置在主搬運室5的一側的4個固化單元D1~固化單元D4,並且可進入至同樣地配置於主搬運室5的相反側的4個固化單元。[Fourth Embodiment] FIG. 7 is a schematic elevational view showing a configuration of a substrate processing apparatus 1C according to a fourth embodiment of the present invention, and shows a configuration of one side of a main transport chamber. A pair of buildup unit groups G21 and a buildup unit group G22 are disposed on one side of the main transfer chamber 5 (see FIG. 5A and the like), and a partial transfer robot LR1 and a portion are disposed between the buildup unit groups G21 and the buildup unit group G22. Handling robot LR2. In this example, one laminated unit group G21 is formed by stacking three liquid processing units M1, a liquid processing unit M2, and a liquid processing unit M3 into three layers. The other laminated unit group G22 includes a liquid processing unit M4 and four curing units D1 to D4 which are sequentially laminated on the liquid processing unit M4. The same configuration is also provided on the opposite side of the main transport chamber 5. The main transport robot CR can enter the four liquid processing units M1 to M4 disposed on one side of the main transport chamber 5, and can enter four liquid processing units that are similarly disposed on the opposite side of the main transport chamber 5. . The main transport robot CR may be configured to be able to enter the four curing units D1 to D4 disposed on one side of the main transport chamber 5, and may enter four curing units that are disposed on the opposite side of the main transport chamber 5 in the same manner. unit.

在本例中,在主搬運室5的一側,設置有兩個局部搬運機器人LR1、局部搬運機器人LR2,該些局部搬運機器人LR1、局部搬運機器人LR2配置在一個局部搬運室C內。例如,下側的局部搬運機器人LR1亦可進入至3個液體處理單元M1、液體處理單元M2、液體處理單元M4及兩個固化單元D1、固化單元D2。而且,上側的局部搬運機器人LR2亦可進入至兩個液體處理單元M2、液體處理單元M3及4個固化單元D1~固化單元D4。該些局部搬運機器人LR1、局部搬運機器人LR2是以如下方式運行:將藉由液體處理單元M1~液體處理單元M4而形成有成膜處理液後的基板W搬入至任一個固化單元D1~固化單元D4。又,局部搬運機器人LR1、局部搬運機器人LR2是以如下方式運行:將經固化單元D1~固化單元D4固化處理後的基板W搬入至任一個液體處理單元M1~液體處理單元M4,以進行去除處理。在主搬運室5的相反側亦設置有同樣的構成,兩個局部搬運機器人的動作亦是同樣。固化處理後的基板W的搬運亦可由主搬運機器人CR來進行。即,主搬運機器人CR亦可以如下方式運行:將在某個固化單元D中經固化處理的基板W搬入至任一個液體處理單元M中。In this example, two partial transport robots LR1 and a local transport robot LR2 are provided on one side of the main transport chamber 5, and the partial transport robots LR1 and the local transport robots LR2 are disposed in one partial transport chamber C. For example, the lower partial transfer robot LR1 may also enter the three liquid processing units M1, the liquid processing unit M2, the liquid processing unit M4, and the two curing units D1 and the curing unit D2. Further, the upper partial transfer robot LR2 can also enter the two liquid processing units M2, the liquid processing unit M3, and the four curing units D1 to D4. The partial transfer robot LR1 and the local transfer robot LR2 are operated by moving the substrate W on which the film formation processing liquid is formed by the liquid processing unit M1 to the liquid processing unit M4 to any one of the curing units D1 to the curing unit. D4. Further, the local transfer robot LR1 and the local transfer robot LR2 are operated by moving the substrate W subjected to the curing process from the curing unit D1 to the curing unit D4 to any one of the liquid processing units M1 to M4 for removal processing. . The same configuration is also provided on the opposite side of the main transport chamber 5, and the operations of the two partial transport robots are also the same. The conveyance of the substrate W after the curing process can also be performed by the main conveyance robot CR. That is, the main transport robot CR can also be operated in such a manner that the substrate W solidified in a certain curing unit D is carried into any one of the liquid processing units M.

[第5實施形態] 圖8是用以說明本發明的第5實施形態的基板處理裝置1D的構成的圖解性的俯視圖。在本實施形態中,設置有3個積層單元組G31、積層單元組G32、積層單元組G33。第1積層單元組G31是多層(在本實施形態中為三層)地積層液體處理單元M11、液體處理單元M21、液體處理單元M31而構成。第2積層單元組G32沿載體保持部2中的載體3的排列方向,與第1積層單元組G31相對向。所述第2積層單元組G32是多層地積層液體處理單元M12、液體處理單元M22、液體處理單元M32而構成。第3積層單元組G33配置在第1積層單元組G31與第2積層單元組G32之間。第3積層單元組G33是多層(本實施形態中為6層)地積層固化單元D1~固化單元D6而構成,具有與圖6A及圖6B所示的積層單元組G12、積層單元組G15類似的構成。在相對於固化單元D1~固化單元D6與主搬運機器人CR相反之側配置有局部搬運室C。在局部搬運室C內,配置有局部搬運機器人LR。局部搬運機器人LR亦可在與液體處理單元M11、液體處理單元M12,液體處理單元M12、液體處理單元M22及液體處理單元M31、液體處理單元M32相對應的各層各設置有一個。又,亦可針對配置在多層(例如所有層)上的液體處理單元M設置有共同使用的一個局部搬運機器人LR。[Fifth Embodiment] FIG. 8 is a schematic plan view for explaining a configuration of a substrate processing apparatus 1D according to a fifth embodiment of the present invention. In the present embodiment, three laminated unit groups G31, a laminated unit group G32, and a laminated unit group G33 are provided. The first buildup unit group G31 is composed of a plurality of layers (three layers in the present embodiment), a liquid processing unit M11, a liquid processing unit M21, and a liquid processing unit M31. The second buildup unit group G32 faces the first buildup unit group G31 along the direction in which the carriers 3 are arranged in the carrier holding portion 2. The second buildup unit group G32 is composed of a multilayered liquid processing unit M12, a liquid processing unit M22, and a liquid processing unit M32. The third buildup cell group G33 is disposed between the first buildup cell group G31 and the second buildup cell group G32. The third build-up cell group G33 is composed of a plurality of layers (6 layers in the present embodiment), and has a build-up curing unit D1 to a curing unit D6, and has a laminate unit group G12 and a build-up unit group G15 shown in FIGS. 6A and 6B. Composition. The partial transfer chamber C is disposed on the side opposite to the main transfer robot CR with respect to the curing unit D1 to the curing unit D6. A partial transfer robot LR is disposed in the partial transfer chamber C. The local transport robot LR may be provided in each of the layers corresponding to the liquid processing unit M11, the liquid processing unit M12, the liquid processing unit M12, the liquid processing unit M22, the liquid processing unit M31, and the liquid processing unit M32. Further, a partial handling robot LR that is commonly used may be provided for the liquid processing unit M disposed on a plurality of layers (for example, all layers).

主搬運機器人CR配置在主搬運室5A內。主搬運室5是劃分在第1積層單元組G31~第3積層單元組G33與索引機器人IR之間。索引機器人IR與主搬運機器人CR之間的基板W的交接亦可經由暫時保持基板W的基板交接單元7來進行。主搬運機器人CR將自索引機器人IR經由基板交接單元7接收到的未處理的基板W,搬入至第1積層單元組G31或第2積層單元組G32中所含的一個液體處理單元M。將經所述液體處理單元M處理後的基板W藉由局部搬運機器人LR而搬出,且搬入至所述局部搬運機器人LR可進入的固化單元D1~固化單元D6中的任一者。將經所述固化單元D處理後的基板W藉由局部搬運機器人LR而取出,且搬入至所述局部搬運機器人LR可進入的液體處理單元M,以進行去除處理。將在所述液體處理單元M中已結束去除處理等的基板W藉由主搬運機器人CR而取出,且經由基板交接單元7遞交至索引機器人IR。The main transport robot CR is disposed in the main transport chamber 5A. The main transport chamber 5 is partitioned between the first build-up unit group G31 to the third build-up unit group G33 and the index robot IR. The transfer of the substrate W between the index robot IR and the main transport robot CR can also be performed via the substrate transfer unit 7 that temporarily holds the substrate W. The main transport robot CR carries the unprocessed substrate W received from the index robot IR via the substrate transfer unit 7 into one liquid processing unit M included in the first buildup unit group G31 or the second buildup unit group G32. The substrate W processed by the liquid processing unit M is carried out by the partial transfer robot LR, and is carried into any one of the curing unit D1 to the curing unit D6 that the local transfer robot LR can enter. The substrate W processed by the curing unit D is taken out by the partial transfer robot LR, and is carried into the liquid processing unit M into which the local transfer robot LR can enter to perform the removal process. The substrate W in which the removal processing or the like has been completed in the liquid processing unit M is taken out by the main transport robot CR, and delivered to the index robot IR via the substrate transfer unit 7.

經固化單元D固化處理後的基板W亦可藉由主搬運機器人CR,搬入至液體處理單元M,以進行去除處理。The substrate W cured by the curing unit D can also be carried into the liquid processing unit M by the main transfer robot CR to perform the removal process.

[第6實施形態] 圖9是用以說明本發明的第6實施形態的基板處理裝置的構成的圖,表示固化單元D的構成例。所述固化單元D具有構成真空腔室的固化室111。在固化室111上,連接有排氣管112。排氣管112與真空泵等排氣單元113連接。在排氣管112上,插裝有排氣閥110。[Embodiment 6] FIG. 9 is a view showing a configuration of a substrate processing apparatus according to a sixth embodiment of the present invention, and shows a configuration example of the curing unit D. The curing unit D has a curing chamber 111 constituting a vacuum chamber. An exhaust pipe 112 is connected to the curing chamber 111. The exhaust pipe 112 is connected to an exhaust unit 113 such as a vacuum pump. An exhaust valve 110 is inserted in the exhaust pipe 112.

在固化室111內,在側壁115上形成有用於藉由局部搬運機器人LR而搬入/搬出基板W的基板搬入/搬出開口114。In the solidification chamber 111, a substrate loading/unloading opening 114 for loading/unloading the substrate W by the partial transfer robot LR is formed on the side wall 115.

此外,在固化室111內,亦可在側壁117上形成有用於藉由主搬運機器人CR而搬出固化處理後的基板W的基板搬出開口116。此時,較佳為以如下方式構成:設置有用以使基板搬出開口116開關的擋板118,擋板118是藉由擋板驅動單元119而驅動。又,較佳為在擋板118的與固化室111相對向的表面上,設置有作為密封構件的O型環120。此時,擋板118被按壓至固化室111的側壁117,由此,經由O型環120使基板搬出開口116氣密地密閉。當主搬運機器人CR搬出藉由固化單元D而處理完畢的基板W時,擋板驅動單元119對擋板118進行驅動而打開基板搬出開口116。主搬運機器人CR的手HC進入至所述經打開的基板搬出開口116。Further, in the solidification chamber 111, a substrate carry-out opening 116 for carrying out the solidified processed substrate W by the main transport robot CR may be formed on the side wall 117. At this time, it is preferable to provide a shutter 118 for opening and closing the substrate carrying-out opening 116, and the shutter 118 is driven by the shutter driving unit 119. Further, it is preferable that an O-ring 120 as a sealing member is provided on a surface of the baffle 118 facing the curing chamber 111. At this time, the shutter 118 is pressed to the side wall 117 of the curing chamber 111, whereby the substrate carrying-out opening 116 is hermetically sealed via the O-ring 120. When the main transport robot CR carries out the substrate W processed by the curing unit D, the shutter driving unit 119 drives the shutter 118 to open the substrate carry-out opening 116. The hand HC of the main transport robot CR enters the opened substrate carry-out opening 116.

另一方面,基板搬入/搬出開口114藉由局部搬運機器人LR的手LH中所具備的蓋構件125而開關。在蓋構件125的與固化室111相對向的表面上,設置有作為密封構件的O型環126。局部搬運機器人LR是以如下方式運行:將藉由液體處理單元M而形成有成膜處理液膜10後的基板W搬入至固化室111,然後經由O型環126將蓋構件125按壓至固化室111的側壁115。由此,使基板搬入/搬出開口114氣密地堵塞。On the other hand, the substrate loading/unloading opening 114 is opened and closed by the cover member 125 provided in the hand LH of the partial transfer robot LR. On the surface of the cover member 125 opposed to the curing chamber 111, an O-ring 126 as a sealing member is provided. The local transfer robot LR operates by moving the substrate W on which the film formation processing liquid film 10 is formed by the liquid processing unit M to the curing chamber 111, and then pressing the cover member 125 to the curing chamber via the O-ring 126. Side wall 115 of 111. Thereby, the substrate loading/unloading opening 114 is hermetically sealed.

在固化室111的頂板面上,設置有用以將惰性氣體導入至固化室111內的空間的惰性氣體噴嘴71A。關於所述惰性氣體噴嘴71A,具備與圖3所示的固化單元的情況同樣的構成,對惰性氣體噴嘴71A供給惰性氣體。圖9中,對與圖3的各部相對應的部分標註相同的參照符號,並省略說明。An inert gas nozzle 71A for introducing an inert gas into a space inside the curing chamber 111 is provided on the top surface of the curing chamber 111. The inert gas nozzle 71A has the same configuration as that of the curing unit shown in FIG. 3, and supplies an inert gas to the inert gas nozzle 71A. In FIG. 9, the same reference numerals are given to the portions corresponding to the respective portions of FIG. 3, and the description thereof is omitted.

固化單元D的動作的概要如下所述。The outline of the operation of the curing unit D is as follows.

在基板搬出開口116被擋板118堵塞的狀態下,局部搬運機器人LR將基板W搬入至固化室111。所述基板W是在其上表面形成有成膜處理液膜10的狀態的基板。局部搬運機器人LR使手LH進入至固化室111內,並且將蓋構件125按壓至固化室111的側壁115的外表面而堵塞基板搬入/搬出開口114。如此一來,固化室111內成為氣密的密閉空間。藉由在所述狀態下,打開排氣閥110,使排氣單元113運轉,而使固化室111內的空間減壓至低於大氣壓的壓力。由此,基板W上的成膜處理液膜10乾燥而固化。The partial transfer robot LR carries the substrate W into the curing chamber 111 in a state where the substrate carry-out opening 116 is blocked by the shutter 118. The substrate W is a substrate in a state in which the film formation processing liquid film 10 is formed on the upper surface thereof. The local transport robot LR causes the hand LH to enter the curing chamber 111, and presses the lid member 125 to the outer surface of the side wall 115 of the curing chamber 111 to block the substrate loading/unloading opening 114. As a result, the inside of the curing chamber 111 becomes an airtight sealed space. By opening the exhaust valve 110 in the above state, the exhaust unit 113 is operated to decompress the space in the solidification chamber 111 to a pressure lower than atmospheric pressure. Thereby, the film formation processing liquid film 10 on the substrate W is dried and solidified.

在固化室111內的空間的減壓開始為止之前的期間內,打開惰性氣體閥73,自惰性氣體噴嘴71向固化室111內供給惰性氣體。由此,使固化室111內保持為低濕度的空間。當固化室111內的減壓開始後,關閉惰性氣體閥73,以不阻礙減壓。The inert gas valve 73 is opened during the period before the decompression of the space in the curing chamber 111 is started, and the inert gas is supplied from the inert gas nozzle 71 into the curing chamber 111. Thereby, the inside of the curing chamber 111 is maintained in a space of low humidity. When the pressure reduction in the curing chamber 111 is started, the inert gas valve 73 is closed so as not to impede the pressure reduction.

如上所述,當基板W上的成膜處理液膜10的固化結束後,使排氣單元113運行停止,且根據需要打開惰性氣體閥73。由此,使固化室111內的空間恢復至大氣壓。接著,局部搬運機器人LR使保持著形成有固化膜10S的基板W的手LH後退而自固化室111退出。繼而,局部搬運機器人LR將所述基板W搬運至液體處理單元M,以進行去除處理。As described above, after the solidification of the film formation processing liquid film 10 on the substrate W is completed, the operation of the exhaust unit 113 is stopped, and the inert gas valve 73 is opened as needed. Thereby, the space in the curing chamber 111 is returned to the atmospheric pressure. Next, the local transfer robot LR retreats the hand LH holding the substrate W on which the cured film 10S is formed, and exits from the curing chamber 111. Then, the local transport robot LR transports the substrate W to the liquid processing unit M to perform a removal process.

當利用主搬運機器人CR進行固化處理後的基板W的搬運時,擋板驅動單元119使擋板118自基板搬出開口116退避,由此,打開基板搬出開口116。其後,主搬運機器人CR使手HC進入至固化室111內,自局部搬運機器人LR的手LH接收固化處理完畢的基板W,且自基板搬出開口116搬出所述基板W。When the substrate W after the solidification process is performed by the main transport robot CR, the shutter drive unit 119 retracts the shutter 118 from the substrate carry-out opening 116, thereby opening the substrate carry-out opening 116. Thereafter, the main transport robot CR causes the hand HC to enter the solidification chamber 111, receives the solidified processed substrate W from the hand LH of the local transport robot LR, and carries out the substrate W from the substrate carry-out opening 116.

如上所述,藉由在局部搬運機器人LR的手LH上設置蓋構件125,可省略用以使基板搬入/搬出開口114開關的擋板驅動機構。又,可利用局部搬運機器人LR的手LH在固化室111內進行基板W的保持,故而無需在固化室111內設置基板保持機構。藉由減壓而進行的成膜處理液膜10的固化可在短時間內進行,因此不可能因為藉由局部搬運機器人LR的手LH來保持固化處理中的基板W而對生產率造成大的影響。As described above, by providing the cover member 125 on the hand LH of the partial transport robot LR, the shutter drive mechanism for moving the substrate into/out of the opening 114 can be omitted. Moreover, since the substrate W can be held in the curing chamber 111 by the hand LH of the local transport robot LR, it is not necessary to provide the substrate holding mechanism in the curing chamber 111. The curing of the film forming treatment liquid film 10 by the pressure reduction can be performed in a short time, so that it is impossible to have a large influence on the productivity by maintaining the substrate W in the curing process by the hand LH of the partial handling robot LR. .

又,藉由利用手LH將基板W搬運至固化室111的動作,可利用蓋構件125使基板搬入/搬出開口114密閉,從而可直接在固化室111內保持基板W而進行固化處理。因此,可省略基板搬入/搬出開口114的開關專用的動作及基板W的交接動作,故而可縮短整個步驟的所需時間,從而可提高生產率。具體而言,可省略用於基板搬入/搬出開口的擋板開關時間、基板搬入時手LH自固化室111退出的時間、基板搬出時手LH進入至固化室111的時間、用於將基板置於頂升銷上的動作的時間、用於自頂升銷接收基板的動作的時間、使頂升銷上升及下降的時間等。此外,當利用局部搬運機器人LR搬運固化處理後的基板W時,亦可省略基板搬入/搬出開口114的開關時間、與主搬運機器人CR進行基板W的交接所需要的時間等。In addition, by the operation of transporting the substrate W to the curing chamber 111 by the hand LH, the substrate loading/unloading opening 114 can be sealed by the lid member 125, and the substrate W can be directly held in the curing chamber 111 to be cured. Therefore, the operation dedicated to the switch of the substrate loading/unloading opening 114 and the transfer operation of the substrate W can be omitted, so that the time required for the entire step can be shortened, and the productivity can be improved. Specifically, the shutter switching time for the substrate loading/unloading opening, the time when the hand LH is ejected from the curing chamber 111 when the substrate is loaded, and the time when the hand LH enters the curing chamber 111 when the substrate is carried out can be omitted, and the substrate can be placed. The time of the action on the top lift pin, the time for receiving the action of the substrate from the top lift pin, the time for raising and lowering the jacking pin, and the like. In addition, when the substrate W after the curing process is transported by the local transport robot LR, the switching time of the substrate loading/unloading opening 114 and the time required for the main transport robot CR to transfer the substrate W may be omitted.

此外,亦可與藉由減壓的固化處理同時,對基板W進行加熱。具體而言,亦可藉由利用手加熱單元97A(參照圖4)對局部搬運機器人LR的手LH進行加熱,而對基板W進行加熱。又,亦可在固化室111內具備藉由輻射熱或電磁波照射而對基板W進行加熱的加熱單元127,利用所述加熱單元127,對保持於手LH上的基板W進行加熱。Further, the substrate W may be heated simultaneously with the curing treatment under reduced pressure. Specifically, the substrate W may be heated by heating the hand LH of the local transport robot LR by the hand heating unit 97A (see FIG. 4). Further, a heating unit 127 that heats the substrate W by radiant heat or electromagnetic wave irradiation may be provided in the curing chamber 111, and the substrate W held on the hand LH is heated by the heating unit 127.

[第7實施形態] 圖10是用以說明本發明的第7實施形態的圖,表示對局部搬運機器人LR的手LH進行洗滌的手洗滌單元(臂洗滌單元)的構成。[Embodiment 7] FIG. 10 is a view for explaining a seventh embodiment of the present invention, and shows a configuration of a hand washing unit (arm washing unit) that washes the hand LH of the partial transport robot LR.

在以上所述的實施形態中,是在局部搬運室C內具備用於對手LH進行洗滌的構成。與此相對,在本實施形態中,例如,如圖8中以虛擬線所示,與局部搬運室C鄰接而設置有手洗滌單元170。In the embodiment described above, the partial transfer chamber C is provided with a configuration for washing the opponent LH. On the other hand, in the present embodiment, for example, as shown by a virtual line in FIG. 8, a hand washing unit 170 is provided adjacent to the partial transport chamber C.

手洗滌單元170包括與局部搬運室C鄰接而設置的手洗滌室171、配置在手洗滌室內的手洗滌噴嘴172、及用於使手洗滌室171內減壓至低於大氣壓的壓力的排氣單元173。The hand washing unit 170 includes a hand washing chamber 171 provided adjacent to the partial conveying chamber C, a hand washing nozzle 172 disposed in the hand washing chamber, and an exhaust gas for decompressing the inside of the hand washing chamber 171 to a pressure lower than atmospheric pressure. Unit 173.

手洗滌室171構成真空腔。在手洗滌室171的底部175,連接有排氣/排液管176。排氣/排液管176經由排氣管176A,與真空泵等排氣單元173連接。在排氣管176A上,插裝有排氣閥177。排氣/排液管176進而經由排液閥178與排液管176B連接。The hand washing chamber 171 constitutes a vacuum chamber. At the bottom 175 of the hand washing chamber 171, an exhaust/drain pipe 176 is connected. The exhaust/drain pipe 176 is connected to an exhaust unit 173 such as a vacuum pump via an exhaust pipe 176A. An exhaust valve 177 is inserted in the exhaust pipe 176A. The exhaust/drain pipe 176 is in turn connected to the drain pipe 176B via a drain valve 178.

在手洗滌室171內,在側壁181上形成有用以插入局部搬運機器人LR的手LH的開口180。開口180是藉由局部搬運機器人LR的手LH上所具備的蓋構件125而開關。在蓋構件125的與手洗滌室171相對向的表面上,設置有作為密封構件的O型環126。局部搬運機器人LR在未搬運基板W時,以如下方式運行,即,自開口180向手洗滌室171插入手LH,然後,經由O型環126將蓋構件125按壓至手洗滌室171的側壁174。由此,使開口180氣密地堵塞。In the hand washing chamber 171, an opening 180 for inserting the hand LH of the partial handling robot LR is formed on the side wall 181. The opening 180 is opened and closed by the cover member 125 provided on the hand LH of the partial transport robot LR. On the surface of the cover member 125 opposed to the hand washing chamber 171, an O-ring 126 as a sealing member is provided. When the substrate handling robot LR is not transporting the substrate W, it operates in such a manner that the hand LH is inserted from the opening 180 into the hand washing chamber 171, and then the cover member 125 is pressed to the side wall 174 of the hand washing chamber 171 via the O-ring 126. . Thereby, the opening 180 is hermetically sealed.

手洗滌噴嘴172例如,配置在手洗滌室171的頂板面上。手洗滌噴嘴172對已插入至手洗滌室171的手LH噴出洗滌液。手洗滌噴嘴172亦可為呈淋浴狀噴出洗滌液的淋浴噴嘴(shower nozzle)。在手洗滌噴嘴172上,連接有洗滌液配管185。洗滌液配管185與洗滌液供給源186連接。洗滌液供給源186供給可使成膜處理液溶解的洗滌液,例如有機溶劑。在洗滌液配管185上,插裝有使洗滌液流路開關的洗滌液閥187。The hand washing nozzle 172 is disposed, for example, on the top surface of the hand washing chamber 171. The hand washing nozzle 172 ejects the washing liquid to the hand LH that has been inserted into the hand washing chamber 171. The hand washing nozzle 172 may also be a shower nozzle that sprays the washing liquid in a shower. A washing liquid pipe 185 is connected to the hand washing nozzle 172. The washing liquid pipe 185 is connected to the washing liquid supply source 186. The washing liquid supply source 186 supplies a washing liquid which can dissolve the film forming processing liquid, for example, an organic solvent. A washing liquid valve 187 for causing a washing liquid flow path switch is inserted into the washing liquid pipe 185.

手洗滌單元170的動作的概要如下所述。The outline of the operation of the hand washing unit 170 is as follows.

局部搬運機器人LR使手LH進入至手洗滌室171內,並且,將蓋構件125按壓至手洗滌室171的側壁181的外表面而堵塞開口180。如此一來,手洗滌室171內成為氣密的密閉空間。在所述狀態下,打開排液閥178。繼而,藉由打開洗滌液閥187,而自手洗滌噴嘴172向手LH供給洗滌液。由此,對手LH進行洗滌。洗滌液向底部175落下,通過排氣/排液管176,進而通過排液閥178而向排液管176B排出。The local transport robot LR causes the hand LH to enter the hand washing chamber 171, and presses the cover member 125 to the outer surface of the side wall 181 of the hand washing chamber 171 to block the opening 180. As a result, the inside of the hand washing chamber 171 becomes an airtight sealed space. In this state, the drain valve 178 is opened. Then, the washing liquid is supplied from the hand washing nozzle 172 to the hand LH by opening the washing liquid valve 187. Thereby, the opponent LH performs washing. The washing liquid falls to the bottom 175, passes through the exhaust/drain pipe 176, and is discharged to the drain pipe 176B through the drain valve 178.

當自手洗滌噴嘴172噴出洗滌液僅規定時間時,關閉洗滌液閥187,使洗滌液的噴出停止。繼而,關閉排液閥178,取而代之,打開排氣閥177,使排氣單元173運轉。由此,使手洗滌室171內的空間減壓至低於大氣壓的壓力。由此,手LH上的液體成分蒸發,從而使手LH乾燥。When the washing liquid is ejected from the hand washing nozzle 172 for only a predetermined period of time, the washing liquid valve 187 is closed to stop the discharge of the washing liquid. Then, the drain valve 178 is closed, and instead, the exhaust valve 177 is opened to operate the exhaust unit 173. Thereby, the space in the hand washing chamber 171 is decompressed to a pressure lower than atmospheric pressure. Thereby, the liquid component on the hand LH evaporates, thereby drying the hand LH.

當如上所述手LH的洗滌及乾燥結束後,使排氣單元173運行停止,且根據需要打開排液閥178。由此,使手洗滌室171內的空間恢復至大氣壓。接著,局部搬運機器人LR使手LH後退而自手洗滌室171退出。After the washing and drying of the hand LH is completed as described above, the operation of the exhaust unit 173 is stopped, and the drain valve 178 is opened as needed. Thereby, the space in the hand washing chamber 171 is returned to the atmospheric pressure. Next, the local transport robot LR retracts the hand LH and exits from the hand washing chamber 171.

亦可與手洗滌室171的減壓同時,對基板W進行加熱。具體而言,亦可藉由利用手加熱單元97A(參照圖4)對局部搬運機器人LR的手LH進行加熱,而對基板W進行加熱。由此,可促進手LH的乾燥。又,亦可在手洗滌室171內具備藉由輻射熱或電磁波照射而對手LH進行加熱的加熱單元188,促進手LH的乾燥。The substrate W may be heated simultaneously with the decompression of the hand washing chamber 171. Specifically, the substrate W may be heated by heating the hand LH of the local transport robot LR by the hand heating unit 97A (see FIG. 4). Thereby, the drying of the hand LH can be promoted. Further, the hand washing chamber 171 may be provided with a heating unit 188 that heats the hand LH by radiant heat or electromagnetic wave irradiation to promote drying of the hand LH.

如上所述,在所述實施形態中,與局部搬運室C鄰接而設置有手洗滌室171(臂洗滌室),因而當局部搬運機器人LR未搬運基板W時,可在手洗滌室171中對手LH進行洗滌。而且,由於在手洗滌室171內配置有手洗滌噴嘴172(臂洗滌噴嘴),故可一面抑制洗滌液進入至局部搬運室C內,一面對手LH進行洗滌。由此,可抑制洗滌液對基板W的影響。又,藉由使手洗滌室171減壓,可使藉由洗滌液而洗滌後的手LH迅速乾燥。As described above, in the above-described embodiment, the hand washing chamber 171 (arm washing chamber) is provided adjacent to the partial conveying chamber C, so that when the partial conveying robot LR does not carry the substrate W, it can be opponent in the hand washing chamber 171. LH is washed. Further, since the hand washing nozzle 172 (arm washing nozzle) is disposed in the hand washing chamber 171, the washing liquid can be prevented from entering the partial conveying chamber C while being washed by the opponent LH. Thereby, the influence of the washing liquid on the substrate W can be suppressed. Further, by depressurizing the hand washing chamber 171, the hand LH washed by the washing liquid can be quickly dried.

[第8實施形態] 圖11是用以說明本發明的第7實施形態的基板處理裝置的構成的圖,是圖解性地表示可代替以上所述的固化單元而使用的固化單元的構成例的剖面圖。[Embodiment 8] FIG. 11 is a view for explaining a configuration of a substrate processing apparatus according to a seventh embodiment of the present invention, and is a view schematically showing a configuration example of a curing unit that can be used in place of the curing unit described above. Sectional view.

在所述實施形態中,固化單元D具有與圖3所示的構成相似的構成,進而包括作為基板冷卻單元的冷卻板80。亦可代替圖3所示的構成,使用與圖9所示的構成相似的構成。圖10中,表示具備與圖3所示的構成相似的構成的示例。In the above embodiment, the curing unit D has a configuration similar to that shown in Fig. 3, and further includes a cooling plate 80 as a substrate cooling unit. Instead of the configuration shown in FIG. 3, a configuration similar to that shown in FIG. 9 may be used. FIG. 10 shows an example in which a configuration similar to that shown in FIG. 3 is provided.

冷卻板80配置在底座部81上,在其上表面上保持基板W且自下表面進行冷卻。貫通冷卻板80而配置有多個(3根以上)頂升銷84。頂升銷84藉由頂升銷升降單元85而上下移動,由此,在冷卻板80上使基板W上下移動。The cooling plate 80 is disposed on the base portion 81, and holds the substrate W on the upper surface thereof and is cooled from the lower surface. A plurality of (three or more) jacking pins 84 are disposed through the cooling plate 80. The jacking pin 84 is moved up and down by the jacking up/down unit 85, whereby the substrate W is moved up and down on the cooling plate 80.

基板處理裝置進而包括將已結束固化室51中的固化處理的基板W搬運至冷卻板80為止的第2局部搬運機器人150。第2局部搬運機器人150包括保持基板W的手151、及使手151移動的手驅動單元152。手驅動單元152使手151在基板固持器52的上方(第1基板保持位置)與冷卻板80的上方(第2基板保持位置)之間往返移動。在進行手151與頂升銷54、頂升銷84之間的基板W的交接時,使頂升銷54、頂升銷84升降。當然,手驅動單元152亦可設為使基板W升降而與頂升銷54、頂升銷84交接基板W的構成。The substrate processing apparatus further includes a second partial transfer robot 150 that transports the substrate W that has been subjected to the curing process in the curing chamber 51 to the cooling plate 80. The second partial transfer robot 150 includes a hand 151 that holds the substrate W and a hand drive unit 152 that moves the hand 151. The hand drive unit 152 reciprocates the hand 151 between the upper portion (the first substrate holding position) of the substrate holder 52 and the upper portion (the second substrate holding position) of the cooling plate 80. When the transfer of the substrate W between the hand 151 and the jacking pin 54 and the jacking pin 84 is performed, the jacking pin 54 and the jacking pin 84 are raised and lowered. Needless to say, the hand drive unit 152 may be configured to elevate and lower the substrate W and transfer the substrate W to the jacking pin 54 and the jacking pin 84.

在固化室51內,一面利用基板固持器52對基板W進行加熱,一面使固化室51內的固化處理空間50減壓,從而使基板W的表面的成膜處理液膜10固態化,形成固化膜10S。In the curing chamber 51, the substrate W is heated by the substrate holder 52, and the curing processing space 50 in the curing chamber 51 is depressurized, whereby the film forming processing liquid film 10 on the surface of the substrate W is solidified to form a solidification. Film 10S.

在所述固化處理之後,使固化處理空間50恢復至大氣壓,而打開活動蓋部512。如此一來,在底座部511與活動蓋部512之間形成用以搬出基板W的開口。繼而,藉由頂升銷54,使固化處理完畢的基板W向基板固持器52的上方抬起。於是,第2局部搬運機器人150使其手151經由底座部511與活動蓋部512之間所形成的開口而進入。其後,藉由頂升銷54下降,而將固化處理完畢的基板W遞交至手151。繼而,第2局部搬運機器人150對手151進行驅動,使所述基板W移動至冷卻板80的上方為止。在所述狀態下,頂升銷升降單元85使頂升銷84上升,從而自手151接收基板W。手151自冷卻板80的上方退避之後,頂升銷84下降,由此,將基板W載置於冷卻板80上。After the curing treatment, the curing treatment space 50 is returned to atmospheric pressure, and the movable cover portion 512 is opened. As a result, an opening for carrying out the substrate W is formed between the base portion 511 and the movable cover portion 512. Then, the substrate W that has been cured is lifted up above the substrate holder 52 by the lift pins 54. Then, the second partial transfer robot 150 has its hand 151 entered through the opening formed between the base portion 511 and the movable cover portion 512. Thereafter, the solidified substrate W is delivered to the hand 151 by the lifting of the jacking pin 54. Then, the second partial transfer robot 150 is driven by the opponent 151 to move the substrate W to the upper side of the cooling plate 80. In the state described above, the jacking up/down unit 85 raises the jacking pin 84, thereby receiving the substrate W from the hand 151. After the hand 151 is retracted from above the cooling plate 80, the jacking pin 84 is lowered, whereby the substrate W is placed on the cooling plate 80.

冷卻板80使基板W冷卻至常溫為止。其後,頂升銷84抬起基板W,局部搬運機器人LR的手LH接收所述基板W而搬出至固化單元D外。當利用主搬運機器人CR進行固化處理後的基板W的搬運時,主搬運機器人CR的手HC自頂升銷84接收基板W而搬出至固化單元D外。The cooling plate 80 cools the substrate W to normal temperature. Thereafter, the jacking pin 84 lifts the substrate W, and the hand LH of the partial transport robot LR receives the substrate W and carries it out of the curing unit D. When the substrate W after the curing process is performed by the main transport robot CR, the hand HC of the main transport robot CR receives the substrate W from the jacking pin 84 and carries it out of the curing unit D.

如上所述,為利用冷卻板80使固化處理後的基板W冷卻的構成,故而可縮短固化單元D中的處理時間,因此可提高生產率。由於利用與主搬運機器人CR不同的第2局部搬運機器人150來進行在固化室51內經加熱的基板W的搬運,故可避免過多的熱蓄積於主搬運機器人CR,從而可抑制熱對主搬運機器人CR所搬運的基板W的影響。As described above, in order to cool the substrate W after the curing process by the cooling plate 80, the processing time in the curing unit D can be shortened, so that the productivity can be improved. Since the transport of the substrate W heated in the curing chamber 51 is performed by the second partial transfer robot 150 different from the main transport robot CR, excessive heat accumulation can be prevented from being accumulated in the main transport robot CR, and heat can be suppressed to the main transport robot. The influence of the substrate W carried by the CR.

以上,已對本發明的實施形態進行說明,但本發明可進而藉由其他形態來實施。Although the embodiments of the present invention have been described above, the present invention can be embodied in other forms.

例如,在以上所述的實施形態中,固化單元D是構成為使固化室51、固化室111內減壓而進行減壓乾燥,但固化單元D並不需要具備用於減壓的構成。例如,固化單元D亦可構成為在大氣壓中對基板W進行加熱,而使成膜處理液膜10固化。又,亦可構成為自惰性氣體供給源74供給經加熱的惰性氣體,利用所述惰性氣體所形成的暖風來促進成膜處理液膜10的乾燥及固化。For example, in the above-described embodiment, the curing unit D is configured to decompress the inside of the curing chamber 51 and the curing chamber 111 and to perform drying under reduced pressure. However, the curing unit D does not need to have a configuration for reducing pressure. For example, the curing unit D may be configured to heat the substrate W at atmospheric pressure to cure the film forming treatment liquid film 10. Further, the heated inert gas may be supplied from the inert gas supply source 74, and the drying and solidification of the film formation treatment liquid film 10 may be promoted by the warm air formed by the inert gas.

在所述圖1A、圖1B,圖5A、圖5B,圖6A、圖6B及圖7的構成中,亦可在索引機器人IR與主搬運機器人CR之間,配置有暫時保持基板W的基板交接單元,從而與圖8的構成的情況同樣地,進行該些機器人之間的基板交接。In the configuration of FIG. 1A, FIG. 1B, FIG. 5A, FIG. 5B, FIG. 6A, FIG. 6B and FIG. 7, a substrate transfer for temporarily holding the substrate W may be disposed between the index robot IR and the main transfer robot CR. In the same manner as in the configuration of FIG. 8, the unit performs substrate transfer between the robots.

本申請案對應於2017年3月27日向日本專利局提交的日本專利特願2017-061381號,所述申請案的所有揭示內容均藉由引用而編入於本文。The present application corresponds to Japanese Patent Application No. 2017-061381, filed on Jan. 27,,,,,,,,,,,,,

對本發明的實施形態已作詳細說明,但該些實施形態僅為用以闡明本發明的技術內容的具體例,本發明不應限定於該些具體例來解釋,本發明的範圍僅藉由隨附的申請專利範圍而限定。The embodiments of the present invention have been described in detail, but the embodiments are merely specific examples for illustrating the technical contents of the present invention. The present invention is not limited to the specific examples, and the scope of the present invention is only The scope of the patent application is limited.

1、1A、1B、1C、1D‧‧‧基板處理裝置1, 1A, 1B, 1C, 1D‧‧‧ substrate processing equipment

2‧‧‧載體保持部2‧‧‧Carrier Holder

3‧‧‧載體3‧‧‧ Carrier

5、5A‧‧‧主搬運室5, 5A‧‧‧ main transfer room

7‧‧‧基板交接單元7‧‧‧Substrate transfer unit

10‧‧‧成膜處理液膜10‧‧‧ Film forming liquid film

10S‧‧‧固化膜10S‧‧‧ cured film

11‧‧‧處理室11‧‧‧Processing room

12‧‧‧自旋夾盤12‧‧‧ Spin chuck

13‧‧‧杯體13‧‧‧ cup body

14‧‧‧藥液噴嘴14‧‧‧Drug nozzle

15‧‧‧成膜處理液噴嘴15‧‧‧ Film forming treatment liquid nozzle

16‧‧‧去除液噴嘴16‧‧‧Removal fluid nozzle

17‧‧‧馬達17‧‧‧Motor

18、89‧‧‧旋轉軸線18, 89‧‧‧Rotation axis

19‧‧‧遮斷板19‧‧‧ 断板

19a‧‧‧對向面19a‧‧‧ opposite

19b、180‧‧‧開口19b, 180‧‧‧ openings

20‧‧‧遮斷板驅動單元20‧‧‧Mask board drive unit

20A‧‧‧遮斷板升降單元20A‧‧‧Blocking plate lifting unit

20B‧‧‧遮斷板旋轉單元20B‧‧‧ rupture plate rotation unit

21‧‧‧藥液配管21‧‧‧Pharmaceutical piping

22‧‧‧藥液閥22‧‧‧Drug valve

23‧‧‧藥液供給源23‧‧‧Drug supply source

25‧‧‧遮斷板的旋轉軸/旋轉軸25‧‧‧Rotary axis/rotation axis of the rupture plate

26‧‧‧成膜處理液配管26‧‧‧ Film forming treatment liquid piping

27‧‧‧成膜處理液閥27‧‧‧ Film forming treatment valve

28‧‧‧成膜處理液供給源28‧‧‧ Film processing solution supply source

29‧‧‧清洗噴嘴/噴嘴29‧‧‧Clean nozzle/nozzle

31A‧‧‧清洗液配管/配管31A‧‧‧Washing fluid piping/pipe

31B‧‧‧有機溶劑配管31B‧‧‧Organic solvent piping

32A、134‧‧‧清洗液閥32A, 134‧‧‧ cleaning fluid valve

32B、136‧‧‧有機溶劑閥32B, 136‧‧‧Organic Solvent Valve

33A、135‧‧‧清洗液供給源33A, 135‧‧‧ cleaning fluid supply

33B、137‧‧‧有機溶劑供給源33B, 137‧‧‧ Organic solvent supply source

35、36、115、117、174、181‧‧‧側壁35, 36, 115, 117, 174, 181 ‧ ‧ side walls

37、38、114‧‧‧基板搬入/搬出開口37, 38, 114‧‧‧ substrate loading/unloading openings

39、40、118‧‧‧擋板39, 40, 118‧‧ ‧ baffles

41、42、119‧‧‧擋板驅動單元41, 42, 119‧‧ ‧Baffle drive unit

45、140‧‧‧惰性氣體流路45, 140‧‧‧ inert gas flow path

46、72、166‧‧‧惰性氣體配管46, 72, 166‧‧‧ inert gas piping

47、73、142、167‧‧‧惰性氣體閥47, 73, 142, 167‧‧‧ inert gas valves

48、74、143、168‧‧‧惰性氣體供給源48, 74, 143, 168‧‧‧ inert gas supply

50‧‧‧固化處理空間/處理空間50‧‧‧Cure processing space/processing space

51、111‧‧‧固化室51, 111‧‧‧Cure room

52‧‧‧基板固持器52‧‧‧Sheet holder

53H‧‧‧加熱器53H‧‧‧heater

53C‧‧‧冷卻單元53C‧‧‧Cooling unit

54、84‧‧‧頂升銷54, 84‧‧‧ top sales

55、85‧‧‧頂升銷升降單元55, 85‧‧‧ top lift lifting unit

56‧‧‧蓋部驅動單元56‧‧‧Care drive unit

58‧‧‧下端緣部58‧‧‧Bottom edge

59‧‧‧上表面59‧‧‧Upper surface

60、120、126‧‧‧O型環60, 120, 126‧‧‧ O-rings

62‧‧‧排氣配管62‧‧‧Exhaust piping

63、113、173‧‧‧排氣單元63, 113, 173‧‧ ‧ exhaust unit

64、110、177‧‧‧排氣閥64,110,177‧‧‧ exhaust valve

71、71A、165‧‧‧惰性氣體噴嘴71, 71A, 165‧‧‧ inert gas nozzle

80、99B‧‧‧冷卻板80, 99B‧‧‧cooling plate

81、511‧‧‧底座部81, 511‧‧‧ base

90、152‧‧‧手驅動單元90, 152‧‧‧Hand drive unit

91、91A‧‧‧洗滌液噴嘴91, 91A‧‧‧ washing liquid nozzle

92、185‧‧‧洗滌液配管92, 185‧‧‧ washing liquid piping

93、187‧‧‧洗滌液閥93, 187‧‧ ‧ washing liquid valve

94、186‧‧‧洗滌液供給源94, 186‧‧ ‧ washing liquid supply source

97A‧‧‧手加熱單元97A‧‧‧Hand heating unit

97B‧‧‧手冷卻單元97B‧‧‧Hand Cooling Unit

98A‧‧‧熱媒通路98A‧‧‧Heat media access

98B‧‧‧冷媒通路98B‧‧‧Refrigerant access

99A‧‧‧加熱板99A‧‧‧heating plate

101‧‧‧去除液配管101‧‧‧Removal piping

102‧‧‧去除液閥102‧‧‧Removal valve

103‧‧‧去除液供給源103‧‧‧Removal fluid supply

112、176A‧‧‧排氣管112, 176A‧‧‧ exhaust pipe

116‧‧‧基板搬出開口116‧‧‧Substrate removal opening

125‧‧‧蓋構件125‧‧‧covering components

127、188‧‧‧加熱單元127, 188‧‧‧ heating unit

130‧‧‧旋轉軸130‧‧‧Rotary axis

131‧‧‧背面噴嘴131‧‧‧Back nozzle

132‧‧‧噴出口132‧‧‧Spray outlet

133‧‧‧清洗液供給配管133‧‧‧cleaning fluid supply piping

141‧‧‧惰性氣體供給配管141‧‧‧Inert gas supply piping

150‧‧‧第2局部搬運機器人150‧‧‧2nd partial handling robot

151‧‧‧手151‧‧‧Hand

160、175‧‧‧底部160, 175‧‧‧ bottom

161‧‧‧排液配管161‧‧‧Draining piping

170‧‧‧手洗滌單元170‧‧‧Hand washing unit

171‧‧‧手洗滌室171‧‧‧Hand washing room

172‧‧‧手洗滌噴嘴172‧‧‧Hand washing nozzle

176‧‧‧排氣/排液管176‧‧‧Exhaust/Drainage Tube

176B‧‧‧排液管176B‧‧‧Draining tube

178‧‧‧排液閥178‧‧‧Drain valve

512‧‧‧活動蓋部512‧‧‧ activity cover

C、C11-C14、C21-C24、C31、C32‧‧‧局部搬運室C, C11-C14, C21-C24, C31, C32‧‧‧ partial transfer room

CR‧‧‧主搬運機器人CR‧‧‧Main handling robot

D、D1-D6、D11-D14、D21-D24、D31-D34‧‧‧固化單元D, D1-D6, D11-D14, D21-D24, D31-D34‧‧‧ curing unit

G1-G4、G11-G16、G21、G22、G31-G33‧‧‧積層單元組G1-G4, G11-G16, G21, G22, G31-G33‧‧‧ laminated unit groups

HC‧‧‧主搬運機器人的手HC‧‧‧Hands of the main handling robot

IR‧‧‧索引機器人IR‧‧‧ indexing robot

LH、LH1、LH2‧‧‧局部搬運機器人的手LH, LH1, LH2‧‧‧ Partial Handling Robot Hand

LR、LR1、LR2、LR11-LR14、LR21-LR24、LR31、LR32‧‧‧局部搬運機器人LR, LR1, LR2, LR11-LR14, LR21-LR24, LR31, LR32‧‧‧ local handling robot

M、M1-M4、M11-M14、M21-M24、M31-M34‧‧‧液體處理單元M, M1-M4, M11-M14, M21-M24, M31-M34‧‧‧ liquid handling unit

S1‧‧‧第1層S1‧‧‧1st floor

S2‧‧‧第2層S2‧‧‧2nd floor

S3‧‧‧第3層S3‧‧‧3rd floor

W‧‧‧基板W‧‧‧Substrate

圖1A是用以說明本發明的第1實施形態的基板處理裝置的構成的俯視圖。 圖1B是用以說明所述第1實施形態的基板處理裝置的構成的圖解性的立面圖。 圖2是用以說明所述基板處理裝置中所具備的液體處理單元的構成例的圖解性的剖面圖。 圖3是用以說明所述基板處理裝置中所具備的固化單元的構成例的圖解性的剖面圖。 圖4是用以說明所述基板處理裝置中所具備的局部搬運機器人的構成例的圖。 圖5A是用以說明本發明的第2實施形態的基板處理裝置的構成的圖解性的俯視圖。 圖5B是用以說明所述第2實施形態的基板處理裝置的構成的圖解性的立面圖。 圖6A是用以說明本發明的第3實施形態的基板處理裝置的構成的圖解性的俯視圖。 圖6B是用以說明所述第3實施形態的基板處理裝置的構成的圖解性的立面圖。 圖7是用以說明本發明的第4實施形態的基板處理裝置的構成的圖解性的立面圖,表示主搬運室的一側的構成。 圖8是用以說明本發明的第5實施形態的基板處理裝置的構成的圖解性的俯視圖。 圖9是用以說明本發明的第6實施形態的基板處理裝置的構成的圖,表示固化單元的構成例。 圖10是用以說明本發明的第7實施形態的圖,表示洗滌局部搬運機器人的手的手洗滌單元的構成。 圖11是用以說明本發明的第8實施形態的基板處理裝置的構成的圖,是圖解性地表示固化單元的進而另一構成例的剖面圖。1A is a plan view showing a configuration of a substrate processing apparatus according to a first embodiment of the present invention. Fig. 1B is a schematic elevational view for explaining a configuration of a substrate processing apparatus according to the first embodiment. FIG. 2 is a schematic cross-sectional view for explaining a configuration example of a liquid processing unit provided in the substrate processing apparatus. 3 is a schematic cross-sectional view for explaining a configuration example of a curing unit provided in the substrate processing apparatus. FIG. 4 is a view for explaining a configuration example of a partial transport robot included in the substrate processing apparatus. FIG. 5 is a schematic plan view for explaining a configuration of a substrate processing apparatus according to a second embodiment of the present invention. Fig. 5B is a schematic elevational view for explaining a configuration of a substrate processing apparatus according to the second embodiment. FIG. 6 is a schematic plan view for explaining a configuration of a substrate processing apparatus according to a third embodiment of the present invention. Fig. 6B is a schematic elevational view for explaining a configuration of a substrate processing apparatus according to the third embodiment. FIG. 7 is a schematic elevational view showing a configuration of a substrate processing apparatus according to a fourth embodiment of the present invention, and shows a configuration of one side of the main transfer chamber. 8 is a schematic plan view for explaining a configuration of a substrate processing apparatus according to a fifth embodiment of the present invention. FIG. 9 is a view showing a configuration of a substrate processing apparatus according to a sixth embodiment of the present invention, and shows a configuration example of a curing unit. Fig. 10 is a view for explaining a seventh embodiment of the present invention, and shows a configuration of a hand washing unit for washing a hand of a partial transport robot. FIG. 11 is a view for explaining a configuration of a substrate processing apparatus according to an eighth embodiment of the present invention, and is a cross-sectional view schematically showing still another configuration example of the curing unit.

Claims (20)

一種基板處理裝置,包括: 液體處理單元,在處理室內對基板的表面供給處理液,在基板的表面上形成處理液膜; 固化單元,在固化室內使所述處理液膜固化而在所述基板的表面上形成固化膜; 去除處理單元,在去除室內將用以去除所述固化膜的去除液供給至所述基板的表面; 主搬運單元,向所述處理室搬入基板,並自所述去除室搬出基板;以及 局部搬運單元,自所述處理室搬出基板並向所述固化室搬入基板。A substrate processing apparatus comprising: a liquid processing unit that supplies a processing liquid to a surface of a substrate in a processing chamber to form a processing liquid film on a surface of the substrate; and a curing unit that cures the processing liquid film in the curing chamber Forming a cured film on the surface; removing the processing unit, supplying the removal liquid for removing the cured film to the surface of the substrate in the removal chamber; the main transport unit, loading the substrate into the processing chamber, and removing the substrate The chamber carries out the substrate; and the partial transport unit removes the substrate from the processing chamber and carries the substrate into the curing chamber. 如申請專利範圍第1項所述的基板處理裝置,其中所述主搬運單元配置在主搬運室內,所述局部搬運單元配置在與所述主搬運室隔離的局部搬運室內。The substrate processing apparatus according to claim 1, wherein the main transport unit is disposed in a main transport chamber, and the partial transport unit is disposed in a partial transport chamber that is isolated from the main transport chamber. 如申請專利範圍第1項或第2項所述的基板處理裝置,其中所述固化單元包含對所述基板進行加熱的加熱單元。The substrate processing apparatus according to claim 1 or 2, wherein the curing unit includes a heating unit that heats the substrate. 如申請專利範圍第1項或第2項所述的基板處理裝置,其中所述局部搬運單元進而自所述固化室搬出基板,並向所述去除室搬入基板。The substrate processing apparatus according to the first or second aspect of the invention, wherein the partial transfer unit further carries out the substrate from the curing chamber, and carries the substrate into the removal chamber. 如申請專利範圍第4項所述的基板處理裝置,其中所述局部搬運單元包括自所述處理室搬出基板並向所述固化室搬入基板的第1搬運臂、以及自所述固化室搬出基板並向所述去除室搬入基板的第2搬運臂。The substrate processing apparatus according to claim 4, wherein the partial transport unit includes a first transport arm that carries out a substrate from the processing chamber, carries the substrate into the curing chamber, and carries out the substrate from the curing chamber. And moving the second transfer arm of the substrate to the removal chamber. 如申請專利範圍第1項或第2項所述的基板處理裝置,其中 所述液體處理單元包括: 基板保持單元,水平地保持基板;以及 處理液噴出單元,對保持於所述基板保持單元上的基板噴出處理液。The substrate processing apparatus according to claim 1 or 2, wherein the liquid processing unit comprises: a substrate holding unit that horizontally holds the substrate; and a processing liquid ejecting unit that is held on the substrate holding unit The substrate is ejected from the treatment liquid. 如申請專利範圍第1項或第2項所述的基板處理裝置,其中所述處理室與所述去除室為相同的室。The substrate processing apparatus according to claim 1 or 2, wherein the processing chamber and the removal chamber are the same chamber. 如申請專利範圍第1項或第2項所述的基板處理裝置,其中 所述局部搬運單元具有保持基板並通過局部搬運室的搬運臂, 所述基板處理裝置進而包括:臂洗滌噴嘴,設置在所述局部搬運室內,噴出對所述搬運臂進行洗滌的洗滌液。The substrate processing apparatus according to claim 1 or 2, wherein the partial transfer unit has a transfer arm that holds the substrate and passes through the partial transfer chamber, and the substrate processing device further includes: an arm washing nozzle, which is disposed at In the partial transfer chamber, a washing liquid that washes the transfer arm is ejected. 如申請專利範圍第8項所述的基板處理裝置,其中所述局部搬運室包括接收所述洗滌液的底部、及排出所述底部所接收的洗滌液的排液單元。The substrate processing apparatus according to claim 8, wherein the partial transfer chamber includes a liquid receiving unit that receives the bottom of the washing liquid and discharges the washing liquid received by the bottom portion. 如申請專利範圍第1項或第2項所述的基板處理裝置,其中 所述局部搬運單元具有保持基板的搬運臂, 所述基板處理裝置進而包括:臂洗滌噴嘴,設置在所述搬運臂上,噴出用以洗滌所述搬運臂的洗滌液。The substrate processing apparatus according to claim 1 or 2, wherein the partial transport unit has a transport arm that holds a substrate, and the substrate processing apparatus further includes: an arm wash nozzle disposed on the transport arm And washing the washing liquid for washing the transfer arm. 如申請專利範圍第1項或第2項所述的基板處理裝置,其中 所述局部搬運單元具有保持基板並通過局部搬運室的搬運臂, 所述基板處理裝置進而包括: 臂洗滌室,與所述局部搬運室鄰接而設置; 臂洗滌噴嘴,配置在所述臂洗滌室內,噴出用以洗滌所述搬運臂的洗滌液;以及 減壓單元,使所述臂洗滌室內減壓至低於大氣壓的壓力而使所述搬運臂乾燥。The substrate processing apparatus according to claim 1 or 2, wherein the partial transport unit has a transport arm that holds the substrate and passes through the partial transport chamber, and the substrate processing apparatus further includes: an arm washing chamber, and The partial transfer chamber is disposed adjacent to each other; the arm washing nozzle is disposed in the arm washing chamber to discharge the washing liquid for washing the transfer arm; and the decompression unit is configured to depressurize the arm washing chamber to below atmospheric pressure The transfer arm is dried by pressure. 如申請專利範圍第1項或第2項所述的基板處理裝置,其中 所述去除處理單元包括: 基板保持單元,在所述去除室內水平地保持基板;以及 去除液噴出單元,對保持於所述基板保持單元上的基板噴出去除液。The substrate processing apparatus according to claim 1 or 2, wherein the removal processing unit comprises: a substrate holding unit that horizontally holds the substrate in the removal chamber; and a removal liquid ejection unit that is held in the The substrate on the substrate holding unit ejects the removal liquid. 一種基板處理方法,包括: 處理液膜形成步驟,對基板的表面在處理室內供給處理液,在基板的表面上形成處理液膜; 第1局部搬運步驟,所述處理液膜形成步驟之後,將所述基板搬運至固化室; 固化膜形成步驟,在所述固化室內使所述處理液膜固化而在所述基板的表面上形成固化膜; 第2局部搬運步驟,在所述固化膜形成步驟之後,將所述基板搬運至去除室; 去除處理步驟,在所述去除室內將用以去除所述固化膜的去除液供給至所述基板的表面;以及 主搬運步驟,利用主搬運單元,向所述處理室搬入基板,並自所述去除室搬出基板。A substrate processing method comprising: a processing liquid film forming step of supplying a processing liquid to a surface of a substrate in a processing chamber to form a processing liquid film on a surface of the substrate; a first partial carrying step, after the processing liquid film forming step, The substrate is transported to the curing chamber; a cured film forming step of curing the processed liquid film in the curing chamber to form a cured film on the surface of the substrate; and a second partial transport step in the cured film forming step Thereafter, the substrate is transported to the removal chamber; a removal processing step is performed in which the removal liquid for removing the cured film is supplied to the surface of the substrate; and a main conveyance step using the main conveyance unit The processing chamber is carried into the substrate, and the substrate is carried out from the removal chamber. 如申請專利範圍第13項所述的基板處理方法,其中在所述主搬運步驟中通過主搬運室而搬運所述基板,在所述第1局部搬運步驟中,通過與所述主搬運室隔離的局部搬運室而搬運所述基板。The substrate processing method according to claim 13, wherein the substrate is transported by the main transport chamber in the main transport step, and is separated from the main transport chamber in the first partial transport step The substrate is transported by the partial transfer chamber. 如申請專利範圍第13項或第14項所述的基板處理方法,其中所述固化膜形成步驟包括利用加熱單元對所述基板進行加熱的加熱步驟。The substrate processing method according to claim 13 or 14, wherein the cured film forming step includes a heating step of heating the substrate by a heating unit. 如申請專利範圍第13項或第14項所述的基板處理方法,其中所述第1局部搬運步驟及所述第2局部搬運步驟是藉由共同的局部搬運單元來執行。The substrate processing method according to claim 13 or 14, wherein the first partial transporting step and the second partial transporting step are performed by a common partial transporting unit. 如申請專利範圍第16項所述的基板處理方法,其中藉由所述局部搬運單元的第1搬運臂來進行所述第1局部搬運步驟,藉由所述局部搬運單元的第2搬運臂來進行所述第2局部搬運步驟。The substrate processing method according to claim 16, wherein the first partial conveyance step is performed by the first conveyance arm of the partial conveyance unit, and the second conveyance arm of the partial conveyance unit is used The second partial transport step is performed. 如申請專利範圍第13項或第14項所述的基板處理方法,其中進而包括:臂洗滌步驟,對所述局部搬運單元的搬運臂供給洗滌液。The substrate processing method according to claim 13 or 14, further comprising: an arm washing step of supplying a washing liquid to the conveying arm of the partial conveying unit. 如申請專利範圍第13項或第14項所述的基板處理方法,其中所述處理室及所述去除室為共同的室。The substrate processing method according to claim 13 or claim 14, wherein the processing chamber and the removal chamber are common chambers. 如申請專利範圍第13項或第14項所述的基板處理方法,其中在所述處理液膜形成步驟之前,執行對基板進行洗滌的洗滌步驟。The substrate processing method according to claim 13 or 14, wherein the washing step of washing the substrate is performed before the processing liquid film forming step.
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