TW201834000A - Substrate processing apparatus and substrate processing method - Google Patents
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Abstract
基板處理裝置包括:底座,圍繞著沿鉛垂方向的旋轉軸線進行旋轉;多個保持銷,在所述底座的旋轉方向上相互隔開間隔而設置在所述底座上,在較所述底座更靠上方的位置保持所述基板的周緣部;對向構件,配置在所述底座與所述基板之間,可在與所述基板向下方隔開的隔開位置、與較所述隔開位置更接近所述基板的接近位置之間進行升降,自下方與所述基板相對向;以及第1進入抑制構件,設置在所述對向構件上,在所述對向構件位於所述接近位置的狀態下,抑制氣流進入至所述基板的下表面與所述對向構件之間的空間。The substrate processing apparatus includes: a base that rotates around an axis of rotation in a vertical direction; and a plurality of holding pins disposed on the base at intervals in a rotation direction of the base, more than the base Holding a peripheral portion of the substrate at an upper position; the opposing member is disposed between the base and the substrate, and is spaced apart from the substrate and spaced apart from the substrate Lifting between the approaching positions closer to the substrate, opposite to the substrate from below; and a first entry inhibiting member disposed on the opposing member, the opposing member being located at the approximated position In the state, the airflow is suppressed from entering the space between the lower surface of the substrate and the opposing member.
Description
本發明是有關於一種對基板進行處理的基板處理裝置以及基板處理方法。在成為處理對象的基板中,例如包含半導體晶圓(wafer)、液晶顯示裝置用基板、有機電致發光(Electroluminescence,EL)顯示裝置等平板顯示器(Flat Panel Display,FPD)用基板、光碟(disk)用基板、磁碟用基板、磁光碟用基板、光罩(photomask)用基板、陶瓷(ceramic)基板、太陽電池用基板等基板。The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. The substrate to be processed includes, for example, a semiconductor wafer (wafer), a substrate for a liquid crystal display device, a substrate for a flat panel display (FPD) such as an organic electroluminescence (EL) display device, and a disk (disk). A substrate such as a substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, or a solar cell substrate.
對基板一片片地進行處理的單片式的基板處理裝置包括可圍繞著沿鉛垂方向的旋轉軸線進行旋轉的自旋底座(spin base)、以及設置於自旋底座上而保持基板的保持銷(pin)。在利用此種基板處理裝置的基板處理中,可藉由自處理液噴嘴(nozzle)噴出的處理液,來對旋轉狀態的基板的上表面進行處理。A monolithic substrate processing apparatus for processing a substrate piece by piece includes a spin base rotatable about an axis of rotation in a vertical direction, and a holding pin disposed on the spin base to hold the substrate (pin). In the substrate processing using such a substrate processing apparatus, the upper surface of the substrate in a rotating state can be processed by the processing liquid sprayed from the processing liquid nozzle (nozzle).
然而,在基板處理過程中,有時會在旋轉的構造物(自旋底座或保持銷)的周圍產生氣流。基板處理過程中所產生的處理液的霧氣(mist)(微小的液滴)有可能乘著氣流繞入至基板的下方,而使處理液附著於基板的下表面。因此,即使在已防止處理液經基板的上表面及周緣導引而附著於基板的下表面的情況下,處理液亦有可能附著於基板的下表面。However, during substrate processing, airflow is sometimes generated around the rotating structure (spin base or retaining pin). The mist (small droplets) of the treatment liquid generated during the substrate processing may be wound around the substrate by the air current, and the treatment liquid may adhere to the lower surface of the substrate. Therefore, even when the treatment liquid is prevented from being guided to the lower surface of the substrate via the upper surface and the peripheral edge of the substrate, the treatment liquid may adhere to the lower surface of the substrate.
因此,在下述專利文獻1所述的基板處理裝置中,提出有如下的基板處理:藉由在基板的下表面與自旋底座之間設置保護碟,來一面保護基板的下表面,一面對基板的上表面進行處理。 [現有技術文獻] [專利文獻]Therefore, in the substrate processing apparatus described in the following Patent Document 1, there is proposed a substrate process in which a lower surface of the substrate is protected by providing a protective disk between the lower surface of the substrate and the spin base. The upper surface of the substrate is processed. [Prior Art Document] [Patent Literature]
[專利文獻1]美國專利申請公開第2016/096205號說明書[Patent Document 1] US Patent Application Publication No. 2016/096205
[發明所欲解決之課題] 在專利文獻1所述的基板處理裝置中,藉由使保護碟從自旋底座浮起而與基板的下表面接近,可抑制處理液的霧氣進入至保護碟與基板的下表面之間的空間。但是,即使在使保護碟與基板的下表面接近的情況下,亦在保護碟與基板之間設置有間隙。因此,處理液的霧氣有可能通過所述間隙而附著於基板的下表面。[Problem to be Solved by the Invention] In the substrate processing apparatus described in Patent Document 1, by moving the protective disk from the spin base to be close to the lower surface of the substrate, it is possible to suppress the mist of the processing liquid from entering the protective disk and The space between the lower surfaces of the substrates. However, even when the protective disk is brought close to the lower surface of the substrate, a gap is provided between the protective disk and the substrate. Therefore, it is possible that the mist of the treatment liquid adheres to the lower surface of the substrate through the gap.
因此,本發明的一個目的在於提供一種可良好地保護基板的下表面的基板處理裝置以及基板處理方法。 [解決課題之手段]Accordingly, it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method which can well protect the lower surface of a substrate. [Means for solving the problem]
本發明的一實施形態提供一種基板處理裝置,包括:底座,圍繞著沿鉛垂方向的旋轉軸線進行旋轉;多個保持銷,在所述底座的旋轉方向上相互隔開間隔而設置在所述底座上,在較所述底座更靠上方的位置保持所述基板的周緣部;對向構件,配置在所述底座與所述基板之間,可在與所述基板向下方隔開的隔開位置、與較所述隔開位置更接近所述基板的接近位置之間進行升降,自下方與所述基板相對向;以及第1進入抑制構件,設置在所述對向構件上,在所述對向構件位於所述接近位置的狀態下,抑制氣流進入至所述基板的下表面與所述對向構件之間的空間。An embodiment of the present invention provides a substrate processing apparatus including: a base that rotates about a rotation axis in a vertical direction; and a plurality of holding pins that are spaced apart from each other in a rotation direction of the base a peripheral portion of the substrate is held at a position higher than the base; the opposite member is disposed between the base and the substrate, and is spaced apart from the substrate a position between the approaching position closer to the substrate than the spaced apart position, opposite to the substrate from below; and a first entry inhibiting member disposed on the opposing member, In a state where the opposing member is located at the approaching position, airflow is prevented from entering the space between the lower surface of the substrate and the opposing member.
根據所述構成,底座可在使基板的周緣部保持於多個保持銷上的狀態下圍繞著旋轉軸線進行旋轉。如上所述,在旋轉的構造物的周圍,會產生氣流。例如,容易產生自基板的旋轉徑向的外方流入至基板的下表面與對向構件之間的氣流。在使對向構件位於接近位置的狀態下,藉由第1進入抑制構件來抑制氣流進入至基板的下表面與對向構件之間的空間。因此,亦可抑制液體乘著氣流進入至基板的下表面與對向構件之間的空間。因此,可良好地保護基板的下表面。According to this configuration, the base can be rotated around the rotation axis in a state where the peripheral edge portion of the substrate is held by the plurality of holding pins. As described above, airflow is generated around the rotating structure. For example, it is easy to generate an airflow from the outer side of the rotation direction of the substrate to the airflow between the lower surface of the substrate and the opposing member. In the state where the opposing member is located close to the position, the first entry suppressing member suppresses the flow of air into the space between the lower surface of the substrate and the opposing member. Therefore, it is also possible to suppress the liquid from entering the space between the lower surface of the substrate and the opposing member by the air current. Therefore, the lower surface of the substrate can be well protected.
再者,所謂旋轉徑向,是指相對於旋轉軸線的正交方向。又,所謂旋轉徑向的內方,是指在旋轉徑向上朝向旋轉軸線側的方向。又,所謂旋轉徑向的外方,是指在旋轉徑向上朝向與旋轉軸線側相反之側的方向。Further, the term "rotational radial direction" means an orthogonal direction with respect to the rotation axis. Further, the inner side of the rotation radial direction means a direction toward the rotation axis side in the rotation radial direction. Further, the outer side of the radial direction of rotation refers to a direction that is opposite to the side opposite to the rotation axis side in the radial direction of rotation.
在本發明的一實施形態中,所述第1進入抑制構件包括:第1固定部,固定在所述對向構件上;以及第1彈性接觸部,以越朝向所述基板的旋轉徑向的外方越靠近所述基板的下表面的方式自所述第1固定部延伸,且與所述基板的下表面的周緣部彈性接觸。In one embodiment of the present invention, the first entrance suppressing member includes: a first fixing portion that is fixed to the opposing member; and a first elastic contact portion that faces in a radial direction of rotation of the substrate The outer side extends closer to the lower surface of the substrate from the first fixing portion, and elastically contacts the peripheral portion of the lower surface of the substrate.
根據所述構成,第1彈性接觸部是以自第1固定部越朝向基板的旋轉徑向的外方越靠近基板的下表面的方式自第1固定部延伸。因此,當在基板的下表面與對向構件之間產生有朝向旋轉徑向的外方的氣流時,所述氣流容易進入至第1彈性接觸部與基板的下表面之間。並且,所述氣流使第1彈性接觸部產生彈性變形,以使具有通過第1彈性接觸部與基板的下表面之間所需要的寬度的間隙形成於第1彈性接觸部與基板的下表面之間。繼而,所述氣流通過所述間隙自基板的下表面與對向構件之間的空間排出至外部。因此,可防止基板的下表面與對向構件之間的壓力過度增大,並且可抑制氣流進入至基板的下表面與對向構件之間的空間。According to the above configuration, the first elastic contact portion extends from the first fixing portion so as to be closer to the lower surface of the substrate from the first fixing portion toward the outer surface in the rotation radial direction of the substrate. Therefore, when an airflow toward the outside in the radial direction of rotation is generated between the lower surface of the substrate and the opposing member, the airflow easily enters between the first elastic contact portion and the lower surface of the substrate. Further, the airflow elastically deforms the first elastic contact portion so that a gap having a width required between the first elastic contact portion and the lower surface of the substrate is formed on the first elastic contact portion and the lower surface of the substrate. between. Then, the airflow is discharged to the outside through the gap from the space between the lower surface of the substrate and the opposing member. Therefore, the excessive pressure between the lower surface of the substrate and the opposing member can be prevented from being excessively increased, and the airflow can be suppressed from entering the space between the lower surface of the substrate and the opposing member.
在本發明的一實施形態中,所述第1進入抑制構件由多孔材料形成。In an embodiment of the invention, the first entry suppressing member is formed of a porous material.
根據所述構成,第1進入抑制構件由多孔材料形成。因此,第1進入抑制構件可藉由自氣體受到規定值以上的壓力,而使所述氣體通過。在基板的下表面與對向構件之間會產生朝向旋轉徑向的外方的氣流,由於所述氣流,在第1進入抑制構件的周邊,基板的下表面與對向構件之間的壓力有時達到規定值以上。此時,基板的下表面與對向構件之間的空間內的氣體會通過第1進入抑制構件排出至外部。另一方面,第1進入抑制構件可抑制氣流進入至基板的下表面與對向構件之間的空間。因此,可防止基板的下表面與對向構件之間的壓力過度增大,並且可抑制氣流進入至基板的下表面與對向構件之間的空間。According to this configuration, the first entrance suppressing member is formed of a porous material. Therefore, the first entry suppressing member can pass the gas by receiving a pressure equal to or higher than a predetermined value from the gas. An airflow toward the outside of the rotating radial direction is generated between the lower surface of the substrate and the opposing member. Due to the airflow, the pressure between the lower surface of the substrate and the opposing member is present around the first entrance suppressing member. When the time reaches the specified value or more. At this time, the gas in the space between the lower surface of the substrate and the opposing member is discharged to the outside through the first entrance suppressing member. On the other hand, the first entrance suppressing member can suppress the airflow from entering the space between the lower surface of the substrate and the opposing member. Therefore, the excessive pressure between the lower surface of the substrate and the opposing member can be prevented from being excessively increased, and the airflow can be suppressed from entering the space between the lower surface of the substrate and the opposing member.
又,第1進入抑制構件由多孔材料形成,故而使液體難以通過。因此,可進一步抑制液體自外部進入至基板的下表面與對向構件之間的空間。Further, since the first entrance suppressing member is formed of a porous material, it is difficult to pass the liquid. Therefore, it is possible to further suppress the entry of the liquid from the outside to the space between the lower surface of the substrate and the opposing member.
在本發明的一實施形態中,所述基板處理裝置進而包括第2進入抑制構件,所述第2進入抑制構件設置在所述保持銷上,抑制氣流自所述基板的下表面的周緣部與所述保持銷之間進入至所述基板的下表面的周緣部與所述對向構件之間的空間。In one embodiment of the present invention, the substrate processing apparatus further includes a second entrance suppressing member provided on the holding pin to suppress airflow from a peripheral portion of a lower surface of the substrate The retaining pins enter between the peripheral portion of the lower surface of the substrate and the space between the opposing members.
根據所述構成,第2進入抑制構件抑制氣流自基板的下表面的周緣部與保持銷之間進入至基板的下表面與對向構件之間的空間。因此,可抑制液體乘著氣流自基板的下表面的周緣部與保持銷之間進入至基板的下表面與對向構件之間的空間。According to this configuration, the second entrance suppressing member suppresses the airflow from entering between the peripheral portion of the lower surface of the substrate and the holding pin to the space between the lower surface of the substrate and the opposing member. Therefore, it is possible to suppress the liquid from entering the space between the peripheral portion of the lower surface of the substrate and the holding pin to the space between the lower surface of the substrate and the opposing member.
在本發明的一實施形態中,所述第2進入抑制構件包括:第2固定部,固定在所述保持銷上;以及第2彈性接觸部,以越朝向所述基板的旋轉徑向的外方越靠近所述基板的下表面的方式自所述第2固定部延伸,且與所述基板的下表面的周緣部彈性接觸。In one embodiment of the present invention, the second entrance suppressing member includes: a second fixing portion that is fixed to the holding pin; and a second elastic contact portion that faces outward in a radial direction of rotation of the substrate The side closer to the lower surface of the substrate extends from the second fixing portion and elastically contacts the peripheral portion of the lower surface of the substrate.
根據所述構成,第2彈性接觸部是以自第2固定部越朝向基板的旋轉徑向的外方越靠近基板的下表面的方式自第2固定部延伸。因此,當在基板的下表面與對向構件之間產生有朝向旋轉徑向的外方的氣流時,所述氣流容易進入至第2彈性接觸部與基板的下表面之間。並且,所述氣流使第2彈性接觸部產生彈性變形,以使具有通過第2彈性接觸部與基板的下表面之間所需要的寬度的間隙形成於第2彈性接觸部與基板的下表面之間。繼而,所述氣流通過所述間隙而自基板的下表面與對向構件之間的空間排出至外部。因此,可防止基板的下表面與對向構件之間的壓力過度增大,並且可抑制氣流自基板的下表面的周緣部與保持銷之間進入至基板的下表面與對向構件之間的空間。According to the above configuration, the second elastic contact portion extends from the second fixing portion so that the second fixing portion approaches the lower surface of the substrate from the outer side in the radial direction of rotation of the substrate. Therefore, when an airflow toward the outside in the radial direction of rotation is generated between the lower surface of the substrate and the opposing member, the airflow easily enters between the second elastic contact portion and the lower surface of the substrate. Further, the airflow elastically deforms the second elastic contact portion so that a gap having a width required between the second elastic contact portion and the lower surface of the substrate is formed on the second elastic contact portion and the lower surface of the substrate. between. Then, the airflow is discharged to the outside from the space between the lower surface of the substrate and the opposing member through the gap. Therefore, it is possible to prevent an excessive increase in pressure between the lower surface of the substrate and the opposing member, and it is possible to suppress airflow from entering between the peripheral portion of the lower surface of the substrate and the holding pin to between the lower surface of the substrate and the opposing member. space.
在本發明的一實施形態中,所述第2進入抑制構件由多孔材料形成。In an embodiment of the invention, the second entry suppressing member is formed of a porous material.
根據所述構成,第2進入抑制構件由多孔材料形成。因此,第2進入抑制構件可藉由自氣體受到規定值以上的壓力,而使所述氣體通過。在基板的下表面與對向構件之間會產生朝向旋轉徑向的外方的氣流,由於所述氣流,在第2進入抑制構件的周邊,基板的下表面與對向構件之間的壓力有時達到規定值以上。此時,基板的下表面與對向構件之間的空間內的氣體會自基板的下表面與對向構件之間的空間排出至外部。另一方面,可抑制氣流自外部進入至基板的下表面與對向構件之間的空間。因此,可防止基板的下表面與對向構件之間的壓力過度增大,並且可抑制氣流自基板的下表面的周緣部與保持銷之間進入至基板的下表面與對向構件之間的空間。According to the above configuration, the second entrance suppressing member is formed of a porous material. Therefore, the second entry suppressing member can pass the gas by receiving a pressure equal to or higher than a predetermined value from the gas. An airflow toward the outside of the rotating radial direction is generated between the lower surface of the substrate and the opposing member. Due to the airflow, the pressure between the lower surface of the substrate and the opposing member is present around the second entrance suppressing member. When the time reaches the specified value or more. At this time, the gas in the space between the lower surface of the substrate and the opposing member is discharged to the outside from the space between the lower surface of the substrate and the opposing member. On the other hand, it is possible to suppress the airflow from the outside into the space between the lower surface of the substrate and the opposing member. Therefore, it is possible to prevent an excessive increase in pressure between the lower surface of the substrate and the opposing member, and it is possible to suppress airflow from entering between the peripheral portion of the lower surface of the substrate and the holding pin to between the lower surface of the substrate and the opposing member. space.
又,第2進入抑制構件由多孔材料形成,故而使液體難以通過。因此,可進一步抑制液體自外部進入至基板的下表面與對向構件之間的空間。Further, since the second entrance suppressing member is formed of a porous material, it is difficult to pass the liquid. Therefore, it is possible to further suppress the entry of the liquid from the outside to the space between the lower surface of the substrate and the opposing member.
在本發明的一實施形態中,所述第1進入抑制構件是在所述旋轉方向上相鄰的所述保持銷之間的區域內,抑制氣流進入至所述基板的下表面與所述對向構件之間。而且,所述第2進入抑制構件是在各所述保持銷的周圍,抑制氣流進入至所述基板的下表面與所述對向構件之間。In one embodiment of the present invention, the first entrance suppressing member suppresses airflow from entering a lower surface of the substrate and the pair in a region between the holding pins adjacent in the rotational direction. Between the components. Further, the second entrance suppressing member prevents airflow from entering between the lower surface of the substrate and the opposing member around each of the holding pins.
根據所述構成,第1進入抑制構件是在旋轉方向上相鄰的保持銷之間的區域內,抑制氣流進入至基板的下表面與對向構件之間的空間。而且,第2進入抑制構件是在保持銷的周圍,抑制氣流進入至基板的下表面與對向構件之間的空間。因此,可在旋轉方向上的比較大的範圍(大致全周)內,抑制氣流進入至基板的下表面與對向構件之間的空間。According to this configuration, the first entrance suppressing member prevents the airflow from entering the space between the lower surface of the substrate and the opposing member in the region between the holding pins adjacent in the rotational direction. Further, the second entrance suppressing member prevents the airflow from entering the space between the lower surface of the substrate and the opposing member around the holding pin. Therefore, it is possible to suppress the airflow from entering the space between the lower surface of the substrate and the opposing member in a relatively large range (substantially full circumference) in the rotational direction.
在本發明的一實施形態中,所述基板處理裝置進而包括將氣體供給至所述對向構件與所述基板之間的氣體供給單元(unit)。In an embodiment of the invention, the substrate processing apparatus further includes a gas supply unit that supplies a gas between the opposing member and the substrate.
根據所述構成,藉由氣體供給單元,可將氣體供給至對向構件與基板之間。藉由將氣體供給至對向構件與基板之間,可產生自基板的下表面與對向構件之間的空間朝向所述空間的外部的氣流。因此,可抑制氣流進入至基板的下表面與對向構件之間的空間。According to the above configuration, the gas can be supplied between the opposing member and the substrate by the gas supply unit. By supplying a gas between the opposing member and the substrate, an air flow from the space between the lower surface of the substrate and the opposing member toward the outside of the space can be generated. Therefore, it is possible to suppress the airflow from entering the space between the lower surface of the substrate and the opposing member.
本發明的一實施形態提供一種基板處理方法,包括:基板保持步驟,在圍繞著沿鉛垂方向的旋轉軸線的旋轉方向上相互隔開間隔而設置於底座的多個保持銷上、在較所述底座更靠上方的位置保持基板的周緣部;接近步驟,以固定在自下方與所述基板相對向的對向構件上的彈性構件與所述基板的下表面相接觸的方式,使所述對向構件與基板接近;基板旋轉步驟,藉由在所述多個保持銷保持著所述基板的周緣部,並且彈性構件與所述基板的下表面相接觸的狀態下,使所述底座旋轉而使基板旋轉;以及處理液供給步驟,將對基板進行處理的處理液供給至旋轉狀態的基板的上表面。An embodiment of the present invention provides a substrate processing method including a substrate holding step of being disposed on a plurality of holding pins of a chassis at intervals in a rotation direction around a rotation axis in a vertical direction. The peripheral portion of the substrate is held at a position above the base; the approaching step is such that the elastic member fixed on the opposite member facing the substrate from below contacts the lower surface of the substrate The opposing member is adjacent to the substrate; the substrate rotating step is performed by rotating the base in a state where the plurality of holding pins hold the peripheral portion of the substrate and the elastic member is in contact with the lower surface of the substrate The substrate is rotated, and the processing liquid supply step is performed to supply the processing liquid for processing the substrate to the upper surface of the substrate in a rotating state.
根據所述方法,在彈性構件與基板的下表面相接觸的狀態下,使基板旋轉。如上所述,在旋轉的構造物的周圍,會產生氣流。例如,容易產生自基板的旋轉徑向的外方流入至基板的下表面與對向構件之間的氣流。藉由使彈性構件與基板的下表面相接觸而使彈性構件與基板之間被堵塞,故而使基板的下表面與對向構件之間堵塞。由此,可抑制氣流進入至基板的下表面與對向構件之間的空間。因此,即使在利用處理液對旋轉狀態的基板進行處理的情況下,亦可抑制處理液的霧氣乘著氣流進入至基板的下表面與對向構件之間的空間。因此,可良好地保護基板的下表面。According to the method, the substrate is rotated in a state where the elastic member is in contact with the lower surface of the substrate. As described above, airflow is generated around the rotating structure. For example, it is easy to generate an airflow from the outer side of the rotation direction of the substrate to the airflow between the lower surface of the substrate and the opposing member. By bringing the elastic member into contact with the lower surface of the substrate, the elastic member and the substrate are clogged, so that the lower surface of the substrate and the opposing member are clogged. Thereby, it is possible to suppress the airflow from entering the space between the lower surface of the substrate and the opposing member. Therefore, even when the substrate in the rotating state is processed by the processing liquid, it is possible to suppress the mist of the processing liquid from entering the space between the lower surface of the substrate and the opposing member by the air current. Therefore, the lower surface of the substrate can be well protected.
本發明中的所述目的或進而其他目的、特徵及效果是藉由以下參照隨附圖式而描述的實施形態的說明來闡明。The above and other objects, features, and advantages of the present invention will be apparent from the description of the embodiments described herein.
圖1是用以說明本發明的一實施形態的基板處理裝置1的內部的佈局的圖解性俯視圖。1 is a schematic plan view for explaining a layout of the inside of a substrate processing apparatus 1 according to an embodiment of the present invention.
基板處理裝置1是對矽晶圓(silicon wafer)等基板W一片片地進行處理的單片式的裝置。在所述實施形態中,基板W是圓板狀的基板。基板處理裝置1包含:多個處理單元2,利用藥液或清洗(rinse)液等處理液對基板W進行處理;裝載端口(load port)LP,載置收容有利用處理單元2而處理的多片基板W的載體(carrier)C;搬運機器人(robot)IR及搬運機器人CR,在裝載端口LP與處理單元2之間搬運基板W;以及控制器(controller)3,對基板處理裝置1進行控制。搬運機器人IR在載體C與搬運機器人CR之間搬運基板W。搬運機器人CR在搬運機器人IR與處理單元2之間搬運基板W。多個處理單元2例如具有同樣的構成。The substrate processing apparatus 1 is a one-chip apparatus that processes a substrate W such as a silicon wafer in a single piece. In the above embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes a plurality of processing units 2, and the substrate W is processed by a processing liquid such as a chemical liquid or a rinse liquid, and a load port LP is placed, and the processing unit 2 is placed and stored. A carrier C of the substrate W; a robot IR and a transport robot CR, and a substrate W are transported between the load port LP and the processing unit 2; and a controller 3 controls the substrate processing apparatus 1 . The transport robot IR transports the substrate W between the carrier C and the transport robot CR. The transport robot CR transports the substrate W between the transport robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example.
圖2是用以說明處理單元2的構成例的示意圖。FIG. 2 is a schematic view for explaining a configuration example of the processing unit 2.
處理單元2包含自旋夾盤(spin chuck)5、處理液供給單元8、洗滌單元9及保護碟10。自旋夾盤5一面以水平的姿勢保持一片基板W,一面使基板W圍繞著通過基板W的中央部的鉛垂的旋轉軸線A1進行旋轉。處理液供給單元8對基板W的上表面供給去離子水(Deionized Water,DIW)等處理液。洗滌單元9使刷子(brush)31在基板W的上表面上磨蹭而洗滌基板W的上表面。保護碟10自下方與基板W相對向,保護基板W的下表面隔離基板處理過程中所產生的處理液的霧氣。The processing unit 2 includes a spin chuck 5, a processing liquid supply unit 8, a washing unit 9, and a protective sheet 10. The spin chuck 5 holds the one substrate W in a horizontal posture, and rotates the substrate W around the vertical rotation axis A1 passing through the central portion of the substrate W. The treatment liquid supply unit 8 supplies a treatment liquid such as deionized water (DIW) to the upper surface of the substrate W. The washing unit 9 rubs the brush 31 on the upper surface of the substrate W to wash the upper surface of the substrate W. The protective disk 10 faces the substrate W from below, and the lower surface of the protective substrate W isolates the mist of the processing liquid generated during the substrate processing.
保護碟10是自下方與基板W的至少周緣部相對向的對向構件的一例。處理單元2進而包含將氮氣(N2 )等氣體供給至基板W的下表面與保護碟10之間的空間A的氣體供給單元11。The protective disk 10 is an example of an opposing member that faces at least the peripheral edge portion of the substrate W from below. The processing unit 2 further includes a gas supply unit 11 that supplies a gas such as nitrogen (N 2 ) to the space A between the lower surface of the substrate W and the protective disk 10 .
處理單元2進而包含收容自旋夾盤5的腔室(chamber)16(參照圖1)。在腔室16內,形成有用以將基板W搬入至腔室16內,或將基板W自腔室16內搬出的出入口(未圖示)。在腔室16內,具備使所述出入口開關的擋板(shutter)單元(未圖示)。The processing unit 2 further includes a chamber 16 (see FIG. 1) that houses the spin chuck 5. In the chamber 16, an entrance (not shown) for carrying the substrate W into the chamber 16 or carrying out the substrate W from the chamber 16 is formed. A shutter unit (not shown) for opening and closing the inlet and outlet is provided in the chamber 16.
自旋夾盤5包含可圍繞著旋轉軸線A1旋轉的自旋底座21(底座)、將基板W的周緣部保持於較自旋底座21更靠上方的位置的多個保持銷20、與自旋底座21的中央結合的旋轉軸22、以及對旋轉軸22賦予旋轉力的電動馬達(motor)23。旋轉軸22沿旋轉軸線A1在鉛垂方向上延伸。旋轉軸22貫穿自旋底座21,在較自旋底座21更靠上方的位置具有上端。自旋底座21具有沿水平方向的圓板形狀。多個保持銷20在旋轉方向S上空開間隔而設置在自旋底座21的上表面的周緣部(亦參照後述圖3)。The spin chuck 5 includes a spin base 21 (base) rotatable about the rotation axis A1, a plurality of holding pins 20 that hold the peripheral edge portion of the substrate W at a position higher than the spin base 21, and a spin A rotating shaft 22 that is coupled to the center of the base 21 and an electric motor 23 that imparts a rotational force to the rotating shaft 22 are provided. The rotating shaft 22 extends in the vertical direction along the rotation axis A1. The rotating shaft 22 penetrates the spin base 21 and has an upper end at a position higher than the spin base 21. The spin base 21 has a circular plate shape in the horizontal direction. The plurality of holding pins 20 are spaced apart from each other in the rotational direction S and are provided on the peripheral portion of the upper surface of the spin base 21 (see also FIG. 3 described later).
為了對多個保持銷20進行開關驅動,具備開關單元25。多個保持銷20藉由被開關單元25設為關閉狀態,而保持(夾持)基板W。多個保持銷20藉由被開關單元25設為打開狀態,而解除對基板W的保持。In order to switch the plurality of holding pins 20, the switching unit 25 is provided. The plurality of holding pins 20 are held (clamped) by the switch unit 25 in a closed state. The plurality of holding pins 20 are held in the open state by the switch unit 25, and the holding of the substrate W is released.
開關單元25例如,包含連桿(link)機構(未圖示)及驅動源(未圖示)。所述驅動源例如,包含滾珠(ball)螺桿機構及對所述滾珠螺桿機構賦予驅動力的電動馬達。開關單元25亦可構成為藉由磁力而使多個保持銷20開關。此時,開關單元25例如,包含安裝在保持銷20上的第1磁石(未圖示)、以及藉由接近第1磁石而對第1磁石賦予排斥力或吸引力的第2磁石(未圖示)。藉由第2磁石賦予至第1磁石的排斥力或吸引力,而對保持銷20的開關進行切換。The switch unit 25 includes, for example, a link mechanism (not shown) and a drive source (not shown). The drive source includes, for example, a ball screw mechanism and an electric motor that applies a driving force to the ball screw mechanism. The switch unit 25 may also be configured to open and close a plurality of holding pins 20 by a magnetic force. At this time, the switch unit 25 includes, for example, a first magnet (not shown) attached to the holding pin 20, and a second magnet that imparts a repulsive force or an attractive force to the first magnet by approaching the first magnet (not shown). Show). The switch of the holding pin 20 is switched by the repulsive force or attractive force given to the first magnet by the second magnet.
藉由利用電動馬達23使旋轉軸22旋轉,而使自旋底座21旋轉。由此,基板W在圍繞著旋轉軸線A1的旋轉方向S上旋轉。自旋夾盤5包含於基板保持旋轉單元上,所述基板保持旋轉單元保持著基板W,並使基板W圍繞著沿鉛垂方向的旋轉軸線A1進行旋轉。The rotation base 22 is rotated by the electric motor 23 to rotate the spin base 21. Thereby, the substrate W is rotated in the rotation direction S around the rotation axis A1. The spin chuck 5 is included in a substrate holding rotation unit that holds the substrate W and rotates the substrate W around a rotation axis A1 in the vertical direction.
處理液供給單元8包含對基板W的上表面供給DIW等處理液的處理液噴嘴40、與處理液噴嘴40結合的處理液供給管41、以及插裝在處理液供給管41上的處理液閥(valve)42。對處理液供給管41,自處理液供給源供給處理液。The processing liquid supply unit 8 includes a processing liquid nozzle 40 that supplies a processing liquid such as DIW to the upper surface of the substrate W, a processing liquid supply tube 41 coupled to the processing liquid nozzle 40, and a processing liquid valve that is inserted into the processing liquid supply tube 41. (valve) 42. The processing liquid supply pipe 41 supplies the processing liquid from the processing liquid supply source.
處理液噴嘴40為固定噴嘴。與本實施形態不同,處理液噴嘴40亦可為可在水平方向及鉛垂方向上移動的移動噴嘴。The treatment liquid nozzle 40 is a fixed nozzle. Unlike the present embodiment, the processing liquid nozzle 40 may be a moving nozzle that is movable in the horizontal direction and the vertical direction.
自處理液噴嘴40供給的處理液並不限於DIW,亦可為碳酸水、電解離子(ion)水、臭氧(ozone)水、稀釋濃度(例如,10 ppm~100 ppm左右)的鹽酸水、還原水(氫水)。The treatment liquid supplied from the treatment liquid nozzle 40 is not limited to DIW, and may be carbonated water, ionized water, ozone water, hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm), and reduced. Water (hydrogen water).
洗滌單元9包含用以洗滌基板W的上表面的刷子31、支撐刷子31的刷臂(arm)35、使刷臂35轉動的轉動軸36、以及藉由對轉動軸36進行驅動而使刷臂35在水平方向及鉛垂方向上移動的臂移動機構37。The washing unit 9 includes a brush 31 for washing the upper surface of the substrate W, an arm 35 for supporting the brush 31, a rotating shaft 36 for rotating the brush arm 35, and a brush arm for driving the rotating shaft 36. 35 arm moving mechanism 37 that moves in the horizontal direction and the vertical direction.
刷子31保持於配置在刷子31的上方的刷子固持器(brush holder)32上。刷子固持器32自刷臂35向下方突出。The brush 31 is held on a brush holder 32 disposed above the brush 31. The brush holder 32 protrudes downward from the brush arm 35.
刷子31是由聚乙烯醇(polyvinyl alcohol,PVA)等合成樹脂製成的可彈性變形的海綿(sponge)刷子。刷子31自刷子固持器32向下方突出。刷子31並不限於海綿刷子,亦可為具備由樹脂製的多根纖維形成的毛束的刷子。The brush 31 is an elastically deformable sponge brush made of a synthetic resin such as polyvinyl alcohol (PVA). The brush 31 protrudes downward from the brush holder 32. The brush 31 is not limited to a sponge brush, and may be a brush having a bundle of fibers formed of a plurality of fibers made of resin.
臂移動機構37包含:刷子水平驅動機構(未圖示),藉由使轉動軸36圍繞著轉動軸線A2轉動而使刷臂35水平地移動;以及刷子鉛垂驅動機構(未圖示),藉由使轉動軸36鉛垂地移動而使刷臂35鉛垂地移動。刷子水平驅動機構例如,包含使轉動軸36轉動的電動馬達。刷子鉛垂驅動機構例如,包含滾珠螺桿機構以及對所述滾珠螺桿機構進行驅動的電動馬達。The arm moving mechanism 37 includes a brush horizontal driving mechanism (not shown) that moves the brush arm 35 horizontally by rotating the rotating shaft 36 about the rotation axis A2, and a brush vertical driving mechanism (not shown). The brush arm 35 is vertically moved by causing the rotation shaft 36 to move vertically. The brush horizontal drive mechanism includes, for example, an electric motor that rotates the rotating shaft 36. The brush vertical drive mechanism includes, for example, a ball screw mechanism and an electric motor that drives the ball screw mechanism.
氣體供給單元11包含:氣體噴嘴50,對基板W的下表面與保護碟10之間的空間A供給氮氣等氣體;氣體供給管51,與氣體噴嘴50結合;以及氣體閥52,插裝在氣體供給管51上,使氣體的流路開關。對氣體供給管51中,自氣體供給源供給氮氣等氣體。The gas supply unit 11 includes a gas nozzle 50 that supplies a gas such as nitrogen gas to a space A between the lower surface of the substrate W and the protective disk 10, a gas supply pipe 51 coupled to the gas nozzle 50, and a gas valve 52 that is inserted into the gas. On the supply pipe 51, a flow path of the gas is turned on. In the gas supply pipe 51, a gas such as nitrogen gas is supplied from a gas supply source.
作為自氣體供給源供給至氣體供給管51的氣體,較佳為氮氣等惰性氣體(gas)。惰性氣體並不限於氮氣,而是對基板W的下表面及形成於下表面上的器件為惰性的氣體。作為惰性氣體的示例,除氮氣以外,可舉出氦氣(helium)或氬氣(argon)等稀有氣體類、自導引氣體(homing gas)(氮氣與氫氣的混合氣體)。又,亦可利用空氣作為自氣體供給源供給至氣體供給管51的氣體。The gas supplied to the gas supply pipe 51 from the gas supply source is preferably an inert gas such as nitrogen. The inert gas is not limited to nitrogen, but is a gas inert to the lower surface of the substrate W and the device formed on the lower surface. Examples of the inert gas include, besides nitrogen, a rare gas such as helium or argon, and a homing gas (a mixed gas of nitrogen and hydrogen). Further, air may be used as the gas supplied from the gas supply source to the gas supply pipe 51.
氣體噴嘴50插通至旋轉軸22中。氣體噴嘴50的上端自旋轉軸22的上端露出。在較氣體噴嘴50的上端更靠上方的位置,亦可設置有對自氣體噴嘴50噴出的氣體進行整流的整流構件54。The gas nozzle 50 is inserted into the rotating shaft 22. The upper end of the gas nozzle 50 is exposed from the upper end of the rotating shaft 22. A rectifying member 54 that rectifies the gas ejected from the gas nozzle 50 may be provided at a position above the upper end of the gas nozzle 50.
保護碟10呈大致圓環狀。在保護碟10中,插通有旋轉軸22。保護碟10配置在由保持銷20保持著的基板W與自旋底座21之間。保護碟10可上下活動。The protective disk 10 has a substantially annular shape. In the protective disk 10, a rotating shaft 22 is inserted. The protective disk 10 is disposed between the substrate W held by the holding pin 20 and the spin base 21. The protection disc 10 can be moved up and down.
在保護碟10上,結合有保護碟升降單元60。保護碟10藉由保護碟升降單元60而升降,從而可在與基板W向下方隔開的隔開位置、與在較所述隔開位置更靠上方的位置接近基板W的下表面的接近位置之間移動。保護碟升降單元60是使對向構件升降的對向構件升降單元的一例。On the protective disk 10, a protective disk lifting unit 60 is incorporated. The protective disk 10 is lifted and lowered by the protective disk lifting unit 60 so as to be close to the lower surface of the substrate W at a spaced apart position from the substrate W and at a position above the spaced apart position. Move between. The protective dish lifting unit 60 is an example of an opposing member lifting unit that moves the opposing member up and down.
保護碟升降單元60例如,包含滾珠螺桿機構(未圖示)、以及對所述滾珠螺桿機構賦予驅動力的電動馬達(未圖示)。又,保護碟升降單元60亦可構成為藉由磁力而使保護碟10升降。此時,保護碟升降單元60例如,包含安裝在保護碟10上的第1磁石(未圖示)、以及藉由對第1磁石賦予排斥力而使保護碟10與第1磁石一併上升的第2磁石(未圖示)。The protective dish lifting unit 60 includes, for example, a ball screw mechanism (not shown) and an electric motor (not shown) that applies a driving force to the ball screw mechanism. Further, the protective dish lifting unit 60 may be configured to raise and lower the protective disk 10 by a magnetic force. At this time, the protective disk elevating unit 60 includes, for example, a first magnet (not shown) attached to the protective disk 10, and a repulsive force applied to the first magnet to raise the protective disk 10 together with the first magnet. Second magnet (not shown).
在保護碟10的下表面上,結合有與旋轉軸線A1平行地在鉛垂方向上延伸的導(guide)軸61。導軸61在基板W的旋轉方向S上隔開相等間隔而配置在多個部位。導軸61與設置於自旋底座21的對應部位的線性(linear)軸承62相結合。導軸61一面被所述線性軸承62導引,一面可朝向鉛垂方向、即朝向與旋轉軸線A1平行的方向移動。又,為了使與保護碟10的下表面結合的導軸61與線性軸承62相結合,故而保護碟10圍繞著旋轉軸線A1與自旋底座21一體旋轉。On the lower surface of the protective disk 10, a guide shaft 61 extending in the vertical direction in parallel with the rotation axis A1 is coupled. The guide shafts 61 are arranged at a plurality of locations at equal intervals in the rotation direction S of the substrate W. The guide shaft 61 is combined with a linear bearing 62 provided at a corresponding portion of the spin base 21. The guide shaft 61 is guided by the linear bearing 62 and is movable in a direction perpendicular to the rotation axis A1. Further, in order to combine the guide shaft 61 coupled to the lower surface of the protective disk 10 with the linear bearing 62, the protective disk 10 integrally rotates with the spin base 21 around the rotation axis A1.
導軸61貫穿線性軸承62。導軸61在其下端,具備向外突出的法蘭(flange)63。藉由法蘭63抵接於線性軸承62的下端,而限制導軸61朝向上方的移動,即保護碟10朝向上方的移動。即,法蘭63是對保護碟10朝向上方的移動進行限制的限制構件。The guide shaft 61 penetrates the linear bearing 62. At its lower end, the guide shaft 61 is provided with a flange 63 that protrudes outward. By the flange 63 abutting against the lower end of the linear bearing 62, the upward movement of the guide shaft 61 is restricted, that is, the movement of the protection disk 10 upward. That is, the flange 63 is a restricting member that restricts the movement of the protection disk 10 upward.
圖3是自旋底座21的示意性的俯視圖。圖3中,為了便於說明,利用兩點劃線表示基板W。FIG. 3 is a schematic plan view of the spin base 21. In FIG. 3, for convenience of explanation, the substrate W is indicated by a two-dot chain line.
參照圖3,保護碟10在俯視時呈與基板W為大致相同尺寸的圓形,與基板W的周緣相對向。在保護碟10的周緣部,在與保持銷20相對應的部分,設置有收容保持銷20的至少一部分的缺口10a。Referring to Fig. 3, the protective disk 10 has a circular shape substantially the same size as the substrate W in plan view, and faces the peripheral edge of the substrate W. At a peripheral portion of the protective disk 10, a notch 10a that accommodates at least a part of the holding pin 20 is provided at a portion corresponding to the holding pin 20.
處理單元2進而包含抑制(限制)氣流自基板W的旋轉徑向的外方進入至基板W的下表面與保護碟10之間的空間A的第1進入抑制構件12及第2進入抑制構件13。The processing unit 2 further includes a first entry suppressing member 12 and a second entry suppressing member 13 that suppress (restrict) the flow of air from the outside in the radial direction of rotation of the substrate W to the space A between the lower surface of the substrate W and the protective disk 10. .
再者,所謂基板W的旋轉徑向,是指相對於旋轉軸線A1的正交方向。基板W的旋轉徑向的內方是在基板W的旋轉徑向上朝向旋轉軸線A1側的方向。以下,將基板W的旋轉徑向的內方簡稱為徑向內方。又,基板W的旋轉徑向的外方是在基板W的旋轉徑向上朝向與旋轉軸線A1側相反之側的方向。以下,將基板W的旋轉徑向的外方簡稱為徑向外方。In addition, the rotation radial direction of the board|substrate W is orthogonal direction with respect to the rotation-axis A1. The inner side of the rotation direction of the substrate W is a direction toward the rotation axis A1 side in the rotation radial direction of the substrate W. Hereinafter, the inner side of the rotation direction of the substrate W is simply referred to as a radially inner side. Further, the outer side of the rotation direction of the substrate W is a direction which is opposite to the side opposite to the rotation axis A1 side in the rotation radial direction of the substrate W. Hereinafter, the outer side of the rotation direction of the substrate W in the radial direction is simply referred to as the radial direction.
第1進入抑制構件12抑制氣流自基板W的下表面的周緣部與保護碟10的周緣部之間進入至基板W的下表面與保護碟10之間的空間A。第2進入抑制構件13抑制自基板W的下表面的周緣部與保持銷20之間進入至基板W的下表面與保護碟10之間的空間A。The first entrance suppressing member 12 suppresses the airflow from entering between the peripheral portion of the lower surface of the substrate W and the peripheral portion of the protective disk 10 to the space A between the lower surface of the substrate W and the protective disk 10. The second entrance suppressing member 13 prevents the space A between the peripheral portion of the lower surface of the substrate W and the holding pin 20 from entering between the lower surface of the substrate W and the protective disk 10.
第1進入抑制構件12及第2進入抑制構件13分別設置有多個。詳細而言,第1進入抑制構件12在保護碟10上,一個個地設置於在旋轉方向S上相鄰的保持銷20之間的部分上。各第1進入抑制構件12是在旋轉方向S上相鄰的保持銷20之間的區域內,抑制氣流進入至基板W的下表面與保護碟10之間的空間A。第2進入抑制構件13一個個地設置在各保持銷20上。各第2進入抑制構件13是在所對應的保持銷20的周圍,抑制氣流進入至基板W的下表面與保護碟10之間的空間A。A plurality of the first entry suppressing member 12 and the second entry suppressing member 13 are provided. Specifically, the first entry suppressing member 12 is provided on the protective disk 10 one by one in a portion between the holding pins 20 adjacent in the rotational direction S. Each of the first entrance suppressing members 12 is a space between the lower surface of the substrate W and the protective disk 10 in a region between the adjacent holding pins 20 in the rotational direction S. The second entry suppressing members 13 are provided one by one on each of the holding pins 20. Each of the second entrance suppressing members 13 prevents the airflow from entering the space A between the lower surface of the substrate W and the protective disk 10 around the corresponding holding pin 20.
圖4A是沿圖3的IVA-IVA線的剖面的示意圖。圖4A中,以實線表示位於接近位置的保護碟10。圖4A中,以兩點劃線表示位於隔開位置的保護碟10。4A is a schematic view of a cross section taken along the line IVA-IVA of FIG. 3. In Fig. 4A, the protective disk 10 located at the approximate position is indicated by a solid line. In Fig. 4A, the protective disk 10 at the spaced position is indicated by a two-dot chain line.
第1進入抑制構件12是俯視時呈彎曲狀的樹脂製的片材(sheet)(參照圖3)。構成第1進入抑制構件12的樹脂例如為合成樹脂。作為合成樹脂,例如可舉出聚四氟乙烯(Polytetrafluoroethylene,PTFE)、四氟乙烯-全氟烷基乙烯醚共聚物(tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer,PFA)、聚丙烯(polypropylene,PP)、聚乙烯(polyethylene,PE)等。第1進入抑制構件12為彈性構件。第1進入抑制構件12亦可為合成橡膠等彈性體。The first entry suppressing member 12 is a resin sheet which is curved in plan view (see FIG. 3 ). The resin constituting the first entry suppressing member 12 is, for example, a synthetic resin. Examples of the synthetic resin include polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), polypropylene (PP), and polytetrafluoroethylene. Ethylene (PE), etc. The first entry suppressing member 12 is an elastic member. The first entry suppressing member 12 may be an elastic body such as synthetic rubber.
第1進入抑制構件12一體地包含:第1固定部80,固定在保護碟10上;以及第1彈性接觸部81,與基板W的下表面的周緣部彈性接觸。第1彈性接觸部81在基板W的下表面上與較形成有器件(device)的部分更靠徑向外方的位置相接觸。詳細而言,第1彈性接觸部81在基板W的下表面的周緣部,和徑向外方端與較徑向外方端稍靠內方(2 mm左右內方)的位置之間的部分相接觸。The first entrance suppressing member 12 integrally includes a first fixing portion 80 that is fixed to the protective disk 10 and a first elastic contact portion 81 that elastically contacts the peripheral edge portion of the lower surface of the substrate W. The first elastic contact portion 81 is in contact with a position radially outward of a portion on which the device is formed on the lower surface of the substrate W. Specifically, the portion of the first elastic contact portion 81 between the peripheral portion of the lower surface of the substrate W and the position between the radially outer end and the radially outer end (inwardly about 2 mm) Contact.
第1彈性接觸部81是以越朝向徑向外方越靠近基板W的下表面的方式自第1固定部80延伸。鉛垂方向上的第1彈性接觸部81與基板W之間的距離是越朝向旋轉徑向的外方越變小。在保護碟10的上表面的周緣部在旋轉方向S上相鄰的保持銷20之間的區域內,形成有自下方支撐各第1彈性接觸部81的支撐突起82。The first elastic contact portion 81 extends from the first fixing portion 80 so as to be closer to the lower surface of the substrate W as it goes outward in the radial direction. The distance between the first elastic contact portion 81 and the substrate W in the vertical direction is smaller toward the outer side in the radial direction of rotation. In a region between the holding pins 20 adjacent to each other in the rotational direction S in the peripheral portion of the upper surface of the protective disk 10, a support protrusion 82 that supports each of the first elastic contact portions 81 from below is formed.
第1固定部80例如,藉由樹脂製的螺桿83而固定在保護碟10上。圖4B是圖4A的第1固定部80的周邊的放大圖。參照圖4B,螺桿83包含形成有外螺紋部的螺桿軸83a、以及自螺桿軸83a的軸向上的一端在相對於所述軸向而正交的方向上突出的頭部83b。螺桿軸83a插通(螺合)至形成於保護碟10上的螺孔84中。形成於螺桿軸83a上的外螺紋部與形成於螺孔84的內周面上的內螺紋部螺合。在第1固定部80上,形成有插通螺桿軸83a的插通孔85、以及與插通孔85連通而收容頭部83b的收容孔86。藉由將收容孔86的底部夾持於頭部83b與保護碟10之間,而將第1固定部80固定在保護碟10上。The first fixing portion 80 is fixed to the protective disk 10 by, for example, a resin-made screw 83. FIG. 4B is an enlarged view of the periphery of the first fixing portion 80 of FIG. 4A. Referring to Fig. 4B, the screw 83 includes a screw shaft 83a formed with a male screw portion, and a head portion 83b protruding from a direction perpendicular to the axial direction from one end of the screw shaft 83a in the axial direction. The screw shaft 83a is inserted (screwed) into a screw hole 84 formed in the protective disk 10. The male screw portion formed on the screw shaft 83a is screwed to the female screw portion formed on the inner circumferential surface of the screw hole 84. The first fixing portion 80 is formed with an insertion hole 85 through which the screw shaft 83a is inserted, and a receiving hole 86 that communicates with the insertion hole 85 to receive the head portion 83b. The first fixing portion 80 is fixed to the protective disk 10 by sandwiching the bottom of the receiving hole 86 between the head portion 83b and the protective disk 10.
第1固定部80是在藉由螺桿83而固定在保護碟10上的狀態下密接於保護碟10上。因此,不論保護碟10的位置如何,均可抑制氣流F自第1進入抑制構件12與保護碟10之間進入至基板W的下表面與保護碟10之間的空間A。The first fixing portion 80 is in close contact with the protective disk 10 in a state of being fixed to the protective disk 10 by the screw 83. Therefore, regardless of the position of the protective disk 10, it is possible to suppress the airflow F from entering between the first entrance suppressing member 12 and the protective disk 10 to the space A between the lower surface of the substrate W and the protective disk 10.
第1彈性接觸部81在保護碟10位於隔開位置的狀態下,與基板W的下表面隔開(參照圖4A的兩點劃線)。第1彈性接觸部81是在保護碟10位於接近位置的狀態下,密接於基板W的下表面(參照圖4A的實線)。因此,在保護碟10位於接近位置的狀態下,抑制氣流F自第1進入抑制構件12與基板W的下表面之間進入至基板W的下表面與保護碟10之間的空間A。The first elastic contact portion 81 is spaced apart from the lower surface of the substrate W in a state where the protective disk 10 is at a spaced position (see a two-dot chain line in FIG. 4A). The first elastic contact portion 81 is in close contact with the lower surface of the substrate W in a state in which the protective disk 10 is in the close position (see the solid line in FIG. 4A). Therefore, in a state where the protective disk 10 is in the approaching position, the airflow F is suppressed from entering between the first entrance suppressing member 12 and the lower surface of the substrate W to the space A between the lower surface of the substrate W and the protective disk 10.
如上所述,第1進入抑制構件12在保護碟10位於接近位置的狀態下,抑制氣流F進入至基板W的下表面與保護碟10之間的空間A。As described above, the first entrance suppressing member 12 prevents the airflow F from entering the space A between the lower surface of the substrate W and the protective disk 10 in a state where the protective disk 10 is in the approaching position.
圖5是沿圖3的V-V線的剖面的示意圖。Fig. 5 is a schematic view showing a cross section taken along line V-V of Fig. 3.
第2進入抑制構件13為樹脂製的片材。構成第2進入抑制構件13的樹脂例如為合成樹脂。作為合成樹脂,例如可舉出PTFE、PFA、PP、PE等。第2進入抑制構件13為彈性構件。第2進入抑制構件13亦可為橡膠等彈性體。The second entry suppressing member 13 is a resin sheet. The resin constituting the second entry suppressing member 13 is, for example, a synthetic resin. Examples of the synthetic resin include PTFE, PFA, PP, PE, and the like. The second entry suppressing member 13 is an elastic member. The second entry suppressing member 13 may be an elastic body such as rubber.
保持銷20包括自水平方向夾持於基板W的夾持部20a、以及沿大致水平方向延伸且與基板W的下表面隔開間隔而相對向的對向部20b。The holding pin 20 includes a nip portion 20a that is clamped to the substrate W from the horizontal direction, and an opposing portion 20b that extends in a substantially horizontal direction and is spaced apart from the lower surface of the substrate W.
第2進入抑制構件13一體地包含:第2固定部90,固定在保持銷20的對向部20b上;第2彈性接觸部91,與基板W的下表面的周緣部彈性接觸;以及保護碟接觸部92,在保護碟10位於接近位置的狀態下,自上方與保護碟10的周緣部相接觸。第2彈性接觸部91是以越朝向徑向外方越靠近基板W的下表面的方式自第2固定部90延伸。鉛垂方向上的第2彈性接觸部91與基板W之間的距離是越朝向徑向外方越變小。第2固定部90例如,是藉由利用樹脂製的螺桿93固定在保持銷20的對向部20b上,而固定在保持銷20上。保持銷20的對向部20b經由第2進入抑制構件13,自下方對基板W進行支撐。The second entrance suppressing member 13 integrally includes a second fixing portion 90 fixed to the opposing portion 20b of the holding pin 20, and a second elastic contact portion 91 elastically contacting the peripheral portion of the lower surface of the substrate W; The contact portion 92 comes into contact with the peripheral edge portion of the protective disk 10 from above in a state where the protective disk 10 is in the approaching position. The second elastic contact portion 91 extends from the second fixing portion 90 so as to be closer to the lower surface of the substrate W toward the outside in the radial direction. The distance between the second elastic contact portion 91 in the vertical direction and the substrate W becomes smaller as it goes outward in the radial direction. The second fixing portion 90 is fixed to the holding pin 20 by, for example, being fixed to the opposing portion 20b of the holding pin 20 by a screw 93 made of resin. The opposing portion 20b of the holding pin 20 supports the substrate W from below via the second entrance suppressing member 13.
第2固定部90是在藉由螺桿93而固定在所對應的保持銷20上的狀態下密接於所述保持銷20。因此,抑制了氣流F自第2進入抑制構件13與保持銷20之間進入至基板W的下表面與保護碟10之間的空間A。The second fixing portion 90 is in close contact with the holding pin 20 in a state of being fixed to the corresponding holding pin 20 by the screw 93. Therefore, the airflow F is prevented from entering between the second entrance suppressing member 13 and the holding pin 20 to the space A between the lower surface of the substrate W and the protective disk 10.
第2彈性接觸部91在將基板W保持於多個保持銷20上的狀態下,密接於基板W的下表面。因此,抑制了氣流F自第2進入抑制構件13與基板W的下表面之間進入至基板W的下表面與保護碟10之間的空間A。The second elastic contact portion 91 is in close contact with the lower surface of the substrate W while holding the substrate W on the plurality of holding pins 20 . Therefore, the airflow F is prevented from entering between the second entrance suppressing member 13 and the lower surface of the substrate W to the space A between the lower surface of the substrate W and the protective disk 10.
保護碟接觸部92自第2固定部90延伸至與第2彈性接觸部91相反之側(徑向內方)。保護碟接觸部92亦可在保護碟10位於接近位置的狀態下,以前端(徑向內方端)向上方移動的方式被保護碟10推上去而產生彈性變形。保護碟接觸部92在俯視時,在保護碟10的上表面,與缺口10a的周圍的部分10b重合。The protective disk contact portion 92 extends from the second fixing portion 90 to the side opposite to the second elastic contact portion 91 (inward in the radial direction). The protective disk contact portion 92 may be pushed up by the protective disk 10 to be elastically deformed so that the front end (the radially inner end) moves upward while the protective disk 10 is in the approximate position. The protective disk contact portion 92 overlaps the portion 10b around the notch 10a on the upper surface of the protective disk 10 in plan view.
圖6是用以說明基板處理裝置1的主要部分的電性構成的方塊圖。控制器3具備微電腦(microcomputer),按照規定的程式(program),對基板處理裝置1中所具備的控制對象進行控制。更具體而言,控制器3包含處理器(processor)(中央處理單元(central processing unit,CPU))3A及儲存有程式的記憶體(memory)3B,且構成為藉由處理器3A執行程式,來執行用於基板處理的各種控制。特別是,控制器3對搬運機器人IR、搬運機器人CR、臂移動機構37、電動馬達23、保護碟升降單元60、開關單元25及閥類42、閥類52等的動作進行控制。FIG. 6 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus 1. The controller 3 is provided with a microcomputer, and controls a control target provided in the substrate processing apparatus 1 in accordance with a predetermined program. More specifically, the controller 3 includes a processor (central processing unit (CPU)) 3A and a memory 3B storing the program, and is configured to execute a program by the processor 3A. Various controls for substrate processing are performed. In particular, the controller 3 controls the operations of the transport robot IR, the transport robot CR, the arm moving mechanism 37, the electric motor 23, the protection disc elevating unit 60, the switch unit 25, the valve 42, and the valve 52.
圖7是用以說明基板處理裝置1的基板處理的一例的流程圖,主要表示有藉由控制器3執行程式而實現的處理。FIG. 7 is a flowchart for explaining an example of substrate processing of the substrate processing apparatus 1, and mainly shows processing performed by the controller 3 executing a program.
在基板處理中,首先,將未處理的基板W藉由搬運機器人IR、搬運機器人CR而自載體C搬入至處理單元2,且遞交至自旋夾盤5(步驟S1)。其後,基板W在藉由搬運機器人CR而搬出之前的期間,從自旋底座21的上表面向上方空開間隔而水平地受到保持。開關單元25使基板W的周緣保持於多個保持銷20上(基板保持步驟、步驟S2)。此時,基板W在使形成有器件的器件面朝向下方的狀態下,保持於多個保持銷20上。In the substrate processing, first, the unprocessed substrate W is carried from the carrier C to the processing unit 2 by the transfer robot IR and the transfer robot CR, and is delivered to the spin chuck 5 (step S1). Thereafter, the substrate W is horizontally held upward from the upper surface of the spin base 21 while being carried out by the transport robot CR. The switch unit 25 holds the periphery of the substrate W on the plurality of holding pins 20 (substrate holding step, step S2). At this time, the substrate W is held by the plurality of holding pins 20 in a state where the device surface on which the device is formed faces downward.
其次,保護碟升降單元60使保護碟10上升至接近位置為止(接近步驟,步驟S3)。由此,第1進入抑制構件12的第1彈性接觸部81與基板W的下表面相接觸。其次,打開氣體閥52。由此,開始對保護碟10的上表面與基板W的下表面之間的空間A供給氮氣等氣體(步驟S4)。此時的氣體的供給流量例如為100 L/min~200 L/min。在多個保持銷20保持著基板W的周緣部,並且第1進入抑制構件12與所述基板的下表面相接觸的狀態下,電動馬達23使自旋底座21旋轉。由此,水平地保持於保持銷20上的基板W進行旋轉(基板旋轉步驟,步驟S5)。此時的基板W的旋轉速度例如為500 rpm。基板W的旋轉速度並不限於500 rpm,亦可為100 rpm~1000 rpm之間的任意的旋轉速度。然後,在繼續對保護碟10的上表面與基板W的下表面之間的空間A供給氣體的狀態下,打開處理液閥42。由此,開始對旋轉狀態的基板W的上表面供給DIW等處理液(處理液供給製程,步驟S6)。Next, the protection disc elevating unit 60 raises the protective disc 10 to the approaching position (proximity step, step S3). Thereby, the first elastic contact portion 81 of the first entrance suppressing member 12 comes into contact with the lower surface of the substrate W. Next, the gas valve 52 is opened. Thereby, gas such as nitrogen gas is supplied to the space A between the upper surface of the protective disk 10 and the lower surface of the substrate W (step S4). The supply flow rate of the gas at this time is, for example, 100 L/min to 200 L/min. The electric motor 23 rotates the spin base 21 in a state in which the plurality of holding pins 20 hold the peripheral edge portion of the substrate W and the first entrance suppressing member 12 is in contact with the lower surface of the substrate. Thereby, the substrate W held horizontally on the holding pin 20 is rotated (substrate rotation step, step S5). The rotation speed of the substrate W at this time is, for example, 500 rpm. The rotation speed of the substrate W is not limited to 500 rpm, and may be any rotation speed between 100 rpm and 1000 rpm. Then, the processing liquid valve 42 is opened while continuing to supply the gas to the space A between the upper surface of the protective disk 10 and the lower surface of the substrate W. Thereby, the processing liquid such as DIW is supplied to the upper surface of the substrate W in the rotating state (the processing liquid supply process, step S6).
然後,執行擦拭(scrub)洗滌(步驟S7)。具體而言,臂移動機構37使刷臂35移動,而將刷子31按壓至基板W的上表面。由於基板W正在旋轉,故而刷子31在基板W的上表面上磨蹭。Then, a scrub wash is performed (step S7). Specifically, the arm moving mechanism 37 moves the brush arm 35 to press the brush 31 to the upper surface of the substrate W. Since the substrate W is rotating, the brush 31 is sharpened on the upper surface of the substrate W.
臂移動機構37使刷子31從自旋夾盤5的上方退避至其側方。繼而,關閉處理液閥42,停止自處理液噴嘴40供給處理液(步驟S8)。然後,電動馬達23使自旋底座21的旋轉加速(步驟S9)。由此,執行自旋乾燥(spin dry)處理,即,藉由利用離心力使基板W的上表面及周端面的液滴甩開而使基板W乾燥。所述自旋乾燥處理時的基板W的旋轉速度例如為1500 rpm~3000 rpm。如上所述,自基板W去除處理液,使得基板W乾燥。然後,在開始基板W的高速旋轉之後經過規定時間時,電動馬達23使藉由自旋底座21而產生的基板W的旋轉停止(步驟S10)。The arm moving mechanism 37 retracts the brush 31 from the upper side of the spin chuck 5 to the side thereof. Then, the processing liquid valve 42 is closed, and the supply of the processing liquid from the processing liquid nozzle 40 is stopped (step S8). Then, the electric motor 23 accelerates the rotation of the spin base 21 (step S9). Thereby, a spin dry process is performed in which the droplets of the upper surface and the peripheral end surface of the substrate W are cleaved by centrifugal force to dry the substrate W. The rotation speed of the substrate W at the spin drying treatment is, for example, 1,500 rpm to 3000 rpm. As described above, the treatment liquid is removed from the substrate W, so that the substrate W is dried. Then, when a predetermined time has elapsed after the high-speed rotation of the substrate W is started, the electric motor 23 stops the rotation of the substrate W by the spin base 21 (step S10).
繼而,關閉氣體閥52,停止對基板W的下表面與保護碟10的上表面之間的空間A供給惰性氣體(步驟S11)。繼而,保護碟升降單元60使保護碟10下降至隔開位置為止(步驟S12)。繼而,藉由開關單元25將多個保持銷20設為打開狀態,而使基板W不被多個保持銷20保持而得以釋放(步驟S13)。Then, the gas valve 52 is closed, and the supply of the inert gas to the space A between the lower surface of the substrate W and the upper surface of the protective disk 10 is stopped (step S11). Then, the protective dish lifting unit 60 lowers the protective disk 10 to the spaced position (step S12). Then, the plurality of holding pins 20 are set to the open state by the switch unit 25, and the substrate W is released without being held by the plurality of holding pins 20 (step S13).
繼而,搬運機器人CR進入至處理單元2,從自旋夾盤5撈出處理完畢的基板W,且搬出至處理單元2外(步驟S14)。將所述基板W自搬運機器人CR遞交至搬運機器人IR,且藉由搬運機器人IR而收納於載體C上。Then, the transport robot CR enters the processing unit 2, and the processed substrate W is taken out from the spin chuck 5 and carried out to the outside of the processing unit 2 (step S14). The substrate W is delivered from the transfer robot CR to the transfer robot IR, and is stored in the carrier C by the transfer robot IR.
根據本實施形態,自旋底座21可在使基板W的周緣部保持於多個保持銷20上的狀態下圍繞著旋轉軸線A1進行旋轉。此處,在旋轉的構造物的周圍,會產生氣流。例如,容易產生自基板W的徑向外方流入至基板W的下表面與保護碟10之間的氣流F(參照圖4A)。在使保護碟10位於接近位置的狀態下,可藉由第1進入抑制構件12而抑制氣流F進入至基板W的下表面的周緣部與保護碟10之間的空間A。詳細而言,藉由使保護碟10位於接近位置,而使得第1進入抑制構件12與基板W的下表面彈性接觸,從而第1進入抑制構件12與基板W的下表面密接。另一方面,第1進入抑制構件12的第1固定部80藉由螺桿83而固定在保護碟10上,故而不論保護碟10的位置如何,第1進入抑制構件12與保護碟10均密接。由此,基板W的下表面與保護碟10之間被堵塞。因此,即使在利用處理液對旋轉狀態的基板W進行處理的情況下,亦可抑制液體(藉由基板處理而產生的處理液的霧氣等)乘著氣流F進入至基板W的下表面與保護碟10之間的空間A。因此,可良好地保護基板W的下表面。According to the present embodiment, the spin base 21 can be rotated around the rotation axis A1 in a state where the peripheral edge portion of the substrate W is held by the plurality of holding pins 20. Here, an air flow is generated around the rotating structure. For example, it is easy to generate the airflow F flowing from the radially outer side of the substrate W to the lower surface of the substrate W and the protective disk 10 (refer to FIG. 4A). When the protective disk 10 is placed in the close position, the airflow F can be prevented from entering the space A between the peripheral edge portion of the lower surface of the substrate W and the protective disk 10 by the first entrance suppressing member 12. Specifically, the first entrance suppressing member 12 is elastically brought into contact with the lower surface of the substrate W by positioning the protective disk 10 in the approximate position, whereby the first entrance suppressing member 12 is in close contact with the lower surface of the substrate W. On the other hand, since the first fixing portion 80 of the first entrance suppressing member 12 is fixed to the protective disk 10 by the screw 83, the first entry suppressing member 12 and the protective disk 10 are in close contact with each other regardless of the position of the protective disk 10. Thereby, the lower surface of the substrate W and the protective disk 10 are clogged. Therefore, even when the substrate W in the rotated state is processed by the processing liquid, it is possible to suppress the liquid (the mist of the processing liquid generated by the substrate processing, etc.) from entering the lower surface of the substrate W by the airflow F and protecting it. Space A between the discs 10. Therefore, the lower surface of the substrate W can be well protected.
又,根據本實施形態,利用氣體供給單元11,來對保護碟10與基板W之間的空間A供給氣體。藉由對保護碟10與基板W之間的空間A供給氣體,可產生自基板W與保護碟10之間的空間A朝向所述空間A的外部的氣流(參照圖4A)。因此,可抑制氣流F進入至基板W的下表面與保護碟10之間的空間A。Further, according to the present embodiment, the gas supply unit 11 supplies gas to the space A between the protective disk 10 and the substrate W. By supplying gas to the space A between the protective disk 10 and the substrate W, an air flow from the space A between the substrate W and the protective disk 10 toward the outside of the space A can be generated (refer to FIG. 4A). Therefore, it is possible to suppress the airflow F from entering the space A between the lower surface of the substrate W and the protective disk 10.
再者,基板W的下表面與保護碟10之間所產生的朝向徑向外方的氣流(參照圖4A)不僅來源於因氣體供給單元11的氣體的供給而產生的推出力,而且來源於基板W旋轉時的離心力。Further, the radially outward flow (see FIG. 4A) generated between the lower surface of the substrate W and the protective disk 10 is derived not only from the pushing force generated by the supply of the gas from the gas supply unit 11, but also from The centrifugal force when the substrate W is rotated.
又,根據本實施形態,第1彈性接觸部81是以自第1固定部80越朝向徑向外方越靠近基板W的下表面的方式自第1固定部80延伸。因此,基板W的下表面與保護碟10之間所產生的朝向徑向外方的氣流容易進入至第1彈性接觸部81與基板W的下表面之間。並且,所述氣流使第1彈性接觸部81產生彈性變形,以使具有通過第1彈性接觸部81與基板W的下表面之間所需要的寬度的間隙形成於第1彈性接觸部81與基板W的下表面之間。繼而,所述氣流會通過所述間隙而自基板W的下表面與保護碟10之間的空間A排出至外部。因此,可防止基板W的下表面與保護碟10之間的壓力過度增大,並且可抑制氣流F進入至基板W的下表面與保護碟10之間的空間A。Moreover, according to the present embodiment, the first elastic contact portion 81 extends from the first fixing portion 80 so as to be closer to the lower surface of the substrate W from the first fixing portion 80 toward the outside in the radial direction. Therefore, the airflow radially outward between the lower surface of the substrate W and the protective disk 10 easily enters between the first elastic contact portion 81 and the lower surface of the substrate W. Further, the airflow elastically deforms the first elastic contact portion 81 so that a gap having a width required between the first elastic contact portion 81 and the lower surface of the substrate W is formed in the first elastic contact portion 81 and the substrate. Between the lower surfaces of W. Then, the airflow is discharged to the outside from the space A between the lower surface of the substrate W and the protective disk 10 through the gap. Therefore, the excessive pressure between the lower surface of the substrate W and the protective disk 10 can be prevented from being excessively increased, and the airflow F can be suppressed from entering the space A between the lower surface of the substrate W and the protective disk 10.
又,由於朝向徑向外方的氣流會通過第1彈性接觸部81與基板W的下表面之間,故可抑制液體經基板W的下表面導引而進入至基板W的下表面與保護碟10之間的空間A。Further, since the airflow toward the outside in the radial direction passes between the first elastic contact portion 81 and the lower surface of the substrate W, it is possible to suppress the liquid from being guided through the lower surface of the substrate W to enter the lower surface of the substrate W and the protective disk. Space A between 10.
又,根據本實施形態,第2進入抑制構件13抑制氣流F自基板W的下表面的周緣部與保持銷20之間進入至基板W的下表面的周緣部與保護碟10之間的空間A。詳細而言,藉由使基板W保持於多個保持銷20上,而使得第2進入抑制構件13與基板W的下表面彈性接觸,從而第2進入抑制構件13與基板W的下表面密接。另一方面,不論基板W的保持狀態如何,第2進入抑制構件13與保持銷20均密接。因此,基板W的下表面與保護碟10之間被堵塞。因此,可抑制液體(藉由基板處理而產生的處理液的霧氣等)乘著氣流F而自基板W的下表面的周緣部與保持銷20之間進入至基板W的下表面與保護碟10之間的空間A。Further, according to the present embodiment, the second entrance suppressing member 13 suppresses the space A between the peripheral edge portion of the lower surface of the substrate W and the protective disk 10 from the peripheral edge portion of the lower surface of the substrate W and the holding pin 20 from the airflow F. . Specifically, by holding the substrate W on the plurality of holding pins 20, the second entrance suppressing member 13 is elastically brought into contact with the lower surface of the substrate W, and the second entrance suppressing member 13 is in close contact with the lower surface of the substrate W. On the other hand, regardless of the holding state of the substrate W, the second entrance suppressing member 13 and the holding pin 20 are in close contact with each other. Therefore, the lower surface of the substrate W and the protective disk 10 are clogged. Therefore, it is possible to suppress the liquid (the mist of the treatment liquid generated by the substrate treatment, etc.) from entering between the peripheral portion of the lower surface of the substrate W and the holding pin 20 to the lower surface of the substrate W and the protective disk 10 by the air flow F. Space A between.
又,根據本實施形態,第2彈性接觸部91是以自第2固定部90越朝向徑向外方越靠近基板W的下表面的方式自第2固定部90延伸。因此,在基板W的下表面與保護碟10之間朝向徑向外方的氣流容易進入至第2彈性接觸部91與基板W的下表面之間。並且,所述氣流使第2彈性接觸部91產生彈性變形,以使具有通過第2彈性接觸部91與基板W的下表面之間所需要的寬度的間隙形成於第2彈性接觸部91與基板W的下表面之間。繼而,所述氣流會通過所述間隙而自基板W的下表面與保護碟10之間的空間A排出至外部。因此,可防止基板W的下表面與保護碟10之間的壓力過度增大,並且可抑制氣流F自基板W的下表面的周緣部與保持銷20之間進入至基板W的下表面與保護碟10之間的空間A。Moreover, according to the present embodiment, the second elastic contact portion 91 extends from the second fixing portion 90 so as to be closer to the lower surface of the substrate W from the second fixing portion 90 toward the outside in the radial direction. Therefore, the airflow radially outward between the lower surface of the substrate W and the protective disk 10 easily enters between the second elastic contact portion 91 and the lower surface of the substrate W. Further, the airflow causes the second elastic contact portion 91 to be elastically deformed so that a gap having a width required between the second elastic contact portion 91 and the lower surface of the substrate W is formed in the second elastic contact portion 91 and the substrate. Between the lower surfaces of W. Then, the airflow is discharged to the outside from the space A between the lower surface of the substrate W and the protective disk 10 through the gap. Therefore, it is possible to prevent an excessive increase in the pressure between the lower surface of the substrate W and the protective disk 10, and it is possible to suppress the airflow F from entering between the peripheral portion of the lower surface of the substrate W and the holding pin 20 to the lower surface of the substrate W and protection. Space A between the discs 10.
又,由於朝向徑向外方的氣流會通過第2彈性接觸部91與基板W的下表面之間,故可在保持銷20的周圍,抑制液體經基板W的下表面導引而進入至基板W的下表面與保護碟10之間的空間A。Further, since the airflow toward the outside in the radial direction passes between the second elastic contact portion 91 and the lower surface of the substrate W, the liquid can be prevented from being guided to the substrate through the lower surface of the substrate W around the holding pin 20. The space A between the lower surface of W and the protective disk 10.
又,根據本實施形態,第1進入抑制構件12是在旋轉方向S上相鄰的保持銷20之間的區域內,抑制氣流F進入至基板W的下表面與保護碟10之間的空間A。並且,第2進入抑制構件13是在保持銷20的周圍,抑制氣流F進入至基板W的下表面與保護碟10之間的空間A。因此,可在旋轉方向S上的比較大的範圍(大致全周)內,抑制氣流進入至基板W的下表面與保護碟10之間的空間A。Further, according to the present embodiment, the first entrance suppressing member 12 is in the region between the adjacent holding pins 20 in the rotational direction S, and prevents the airflow F from entering the space A between the lower surface of the substrate W and the protective disk 10. . Further, the second entrance suppressing member 13 is configured to prevent the airflow F from entering the space A between the lower surface of the substrate W and the protective disk 10 around the holding pin 20. Therefore, it is possible to suppress the airflow from entering the space A between the lower surface of the substrate W and the protective disk 10 in a relatively large range (substantially full circumference) in the rotational direction S.
又,根據本實施形態,將螺桿83的頭部83b收容於收容孔86。因此,可在不阻礙在基板W的下表面與保護碟10之間朝向徑向外方的氣流的條件下,利用螺桿83將第1進入抑制構件12固定在保護碟10上。Further, according to the present embodiment, the head portion 83b of the screw 83 is housed in the accommodation hole 86. Therefore, the first entry suppressing member 12 can be fixed to the protective disk 10 by the screw 83 without hindering the flow of the airflow between the lower surface of the substrate W and the protective disk 10 toward the outside in the radial direction.
又,亦可能存在不同於所述實施形態,自氣體供給單元11不供給氣體的情況。又,亦可能存在不同於所述實施形態,在處理單元2上未設置氣體供給單元11的情況。在該些情況下,在基板處理中,不進行氣體的供給(步驟S3)及氣體的供給的停止(步驟S10)。在該些情況下,基板W的下表面與保護碟10之間的氣體亦會因基板W的旋轉時的離心力而向徑向外方移動。由此,使第1彈性接觸部81產生彈性變形,而自基板W的下表面與保護碟10之間的空間A排出至外部。因此,基板W的下表面與保護碟10之間的壓力低於外部的壓力,而成為負壓狀態。由此,第1彈性接觸部81進一步密接於基板的下表面。因此,可進一步抑制氣流F進入至基板W的下表面與保護碟10之間的空間A。Further, there may be cases where the gas is not supplied from the gas supply unit 11 unlike the above embodiment. Further, there may be a case where the gas supply unit 11 is not provided in the processing unit 2 unlike the above embodiment. In some cases, in the substrate processing, the supply of the gas (step S3) and the stop of the supply of the gas are not performed (step S10). In these cases, the gas between the lower surface of the substrate W and the protective disk 10 also moves radially outward due to the centrifugal force at the time of rotation of the substrate W. Thereby, the first elastic contact portion 81 is elastically deformed, and is discharged to the outside from the space A between the lower surface of the substrate W and the protective disk 10. Therefore, the pressure between the lower surface of the substrate W and the protective disk 10 is lower than the external pressure, and becomes a negative pressure state. Thereby, the first elastic contact portion 81 is further in close contact with the lower surface of the substrate. Therefore, it is possible to further suppress the airflow F from entering the space A between the lower surface of the substrate W and the protective disk 10.
又,根據本實施形態,第2進入抑制構件13包含在保護碟10位於接近位置的狀態下,自上方與保護碟10的周緣部相接觸的保護碟接觸部92。因此,可堵塞自保護碟10與各保持銷20之間進入至基板W的下表面與保護碟10之間的空間A的氣流流入至基板W的下表面與保護碟10之間的通道。因此,可抑制自保護碟10與保持銷20之間流入至基板W的下表面與保護碟10之間的空間A的氣流的產生。Further, according to the present embodiment, the second entrance suppressing member 13 includes the protective disk contact portion 92 that comes into contact with the peripheral edge portion of the protective disk 10 from above in a state where the protective disk 10 is in the close position. Therefore, the airflow which enters between the protective disk 10 and each of the holding pins 20 and enters the space A between the lower surface of the substrate W and the protective disk 10 can flow into the passage between the lower surface of the substrate W and the protective disk 10. Therefore, generation of airflow flowing from the protective disk 10 and the holding pin 20 to the space A between the lower surface of the substrate W and the protective disk 10 can be suppressed.
若為如下構成,即,在保護碟10位於接近位置的狀態下,保護碟接觸部92以前端(徑向內方端)向上方移動的方式而產生彈性變形,則可進一步抑制自保護碟10與保持銷20之間流入至基板W的下表面與保護碟10之間的空間A的氣流的產生。When the protective disk 10 is in the close position and the protective disk contact portion 92 is elastically deformed so that the distal end (the radially inner end) moves upward, the self-protecting disk 10 can be further suppressed. The flow of airflow into the space A between the lower surface of the substrate W and the protective disk 10 flows between the holding pin 20.
圖8是本實施形態的第1變形例的第1進入抑制構件12P的周邊的示意圖。圖8中,對與至此為止所說明的構件相同的構件標註相同的參照符號,並省略其說明。FIG. 8 is a schematic view of the periphery of the first entrance suppressing member 12P according to the first modification of the embodiment. In FIG. 8 , members that are the same as those described above are denoted by the same reference numerals, and their description is omitted.
參照圖8,第1變形例的第1進入抑制構件12P與本實施形態不同,由海綿狀的多孔材料形成。作為多孔材料,可舉出氟樹脂、PVA、PP、PE等。第1進入抑制構件12P一體地包含:第1固定部87,固定在保護碟10上;第1接觸部88,在保護碟10位於接近位置的狀態下與基板W的下表面的周緣部及保護碟10的上表面的周緣部相接觸;以及第1連結部89,將第1固定部87與第1接觸部88加以連結。第1固定部87與本實施形態的第1進入抑制構件12的第1固定部80(參照圖4A)同樣地,藉由螺桿83而固定在保護碟10上。Referring to Fig. 8, the first entry suppressing member 12P of the first modification is formed of a sponge-like porous material, unlike the present embodiment. Examples of the porous material include a fluororesin, PVA, PP, PE, and the like. The first entry suppressing member 12P integrally includes a first fixing portion 87 that is fixed to the protective disk 10, and a first contact portion 88 that protects the peripheral portion of the lower surface of the substrate W from the state in which the protective disk 10 is in the approaching position and the protection. The peripheral edge portion of the upper surface of the dish 10 is in contact with each other; and the first connecting portion 89 connects the first fixing portion 87 and the first contact portion 88. Similarly to the first fixing portion 80 (see FIG. 4A) of the first entrance suppressing member 12 of the present embodiment, the first fixing portion 87 is fixed to the protective disk 10 by the screw 83.
根據第1變形例,第1進入抑制構件12P由多孔材料形成。因此,第1進入抑制構件12P可藉由自氣體受到規定值以上的壓力,而使所述氣體通過。According to the first modification, the first entrance suppressing member 12P is formed of a porous material. Therefore, the first entry suppressing member 12P can pass the gas by receiving a pressure equal to or higher than a predetermined value from the gas.
藉由因氣體供給單元11的氣體的供給而產生的推出力或基板W的旋轉時的離心力,在基板W的下表面與保護碟10之間的空間A內會產生朝向徑向外方的氣流,由於所述氣流,在第1進入抑制構件12P的周邊,基板W的下表面與保護碟10之間的空間A的壓力有時達到規定值以上。此時,基板W的下表面與保護碟10之間的空間A內的氣體會通過第1進入抑制構件12P而排出至外部。The ejection force generated by the supply of the gas from the gas supply unit 11 or the centrifugal force during the rotation of the substrate W causes an airflow toward the radially outward direction in the space A between the lower surface of the substrate W and the protective disk 10. Due to the air flow, the pressure of the space A between the lower surface of the substrate W and the protective disk 10 may reach a predetermined value or more around the first entrance suppressing member 12P. At this time, the gas in the space A between the lower surface of the substrate W and the protective disk 10 is discharged to the outside through the first entrance suppressing member 12P.
另一方面,在較第1進入抑制構件12P更靠徑向外方的空間內,與空間A不同,不會藉由氣體供給單元11或離心力而主動地供給氣體。因此,較第1進入抑制構件12P更靠徑向外方的空間與空間A內的第1進入抑制構件12P的周邊的部分相比較,壓力更難以上升。因此,第1進入抑制構件12P可抑制氣流F自徑向外方進入至基板W的下表面與保護碟10之間的空間A。On the other hand, in the space radially outward of the first entry suppressing member 12P, unlike the space A, the gas is not actively supplied by the gas supply unit 11 or the centrifugal force. Therefore, the pressure is more difficult to rise than the portion around the first entrance suppressing member 12P in the space A in the space radially outward of the first entry suppressing member 12P. Therefore, the first entry suppressing member 12P can suppress the airflow F from entering the space A between the lower surface of the substrate W and the protective disk 10 from the outside in the radial direction.
因此,可防止基板W的下表面與保護碟10之間的壓力過度增大,並且可抑制氣流F進入至基板W的下表面與保護碟10之間的空間A。Therefore, the excessive pressure between the lower surface of the substrate W and the protective disk 10 can be prevented from being excessively increased, and the airflow F can be suppressed from entering the space A between the lower surface of the substrate W and the protective disk 10.
又,第1進入抑制構件12P由多孔材料形成。因此,處理液的霧氣難以通過第1進入抑制構件12P。因此,可進一步抑制液體自外部進入至基板W的下表面與保護碟10之間的空間A。Further, the first entry suppressing member 12P is formed of a porous material. Therefore, it is difficult for the mist of the treatment liquid to pass through the first entry suppression member 12P. Therefore, the liquid A can be further prevented from entering the space A between the lower surface of the substrate W and the protective disk 10 from the outside.
圖9是本實施形態的第2變形例的保持銷20的周邊的示意圖。圖9中,對與至此為止所說明的構件相同的構件標註相同的參照符號,並且省略其說明。FIG. 9 is a schematic view of the periphery of the holding pin 20 according to the second modification of the embodiment. In FIG. 9, members that are the same as those described above are denoted by the same reference numerals, and their description is omitted.
參照圖9,第2變形例的第2進入抑制構件13P與本實施形態不同,由海綿狀的多孔材料形成。作為多孔材料,可舉出氟樹脂、PVA、PP、PE等。Referring to Fig. 9, the second entry suppressing member 13P of the second modification is formed of a sponge-like porous material, unlike the present embodiment. Examples of the porous material include a fluororesin, PVA, PP, PE, and the like.
第2進入抑制構件13P一體地包含:第2固定部97,固定在保持銷20的對向部20b上;第2接觸部98,與基板W的下表面的周緣部及對向部20b相接觸;第2連結部99,將第2固定部97與第2接觸部98加以連結;以及保護碟接觸部96,在保護碟10位於接近位置的狀態下,自上方與保護碟10的周緣部相接觸。第2固定部97與本實施形態的第2進入抑制構件13P的第2固定部90(參照圖5)同樣地,藉由螺桿93而固定在對向部20b上。The second entrance suppressing member 13P integrally includes the second fixing portion 97 fixed to the opposing portion 20b of the holding pin 20, and the second contact portion 98 in contact with the peripheral portion of the lower surface of the substrate W and the opposing portion 20b. The second connecting portion 99 connects the second fixing portion 97 and the second contact portion 98, and protects the disk contact portion 96 from the upper side to the peripheral portion of the protective disk 10 in a state where the protective disk 10 is in the approaching position. contact. Similarly to the second fixing portion 90 (see FIG. 5) of the second entrance suppressing member 13P of the present embodiment, the second fixing portion 97 is fixed to the opposing portion 20b by the screw 93.
保護碟接觸部96自第2固定部97延伸至與第2連結部99相反之側。保護碟接觸部96在俯視時,在保護碟10的上表面,與缺口10a的周圍的部分10b重合。The protective disk contact portion 96 extends from the second fixing portion 97 to the side opposite to the second connecting portion 99. The protective disk contact portion 96 overlaps the portion 10b around the notch 10a on the upper surface of the protective disk 10 in plan view.
根據第2變形例,第2進入抑制構件13P由多孔材料形成,故而可使氣體通過。因此,第2進入抑制構件13P可藉由自氣體受到規定的壓力,而使所述氣體通過。According to the second modification, since the second entrance suppressing member 13P is formed of a porous material, the gas can pass therethrough. Therefore, the second entry suppressing member 13P can pass the gas by receiving a predetermined pressure from the gas.
藉由因氣體供給單元11的氣體的供給而產生的推出力或基板W的旋轉時的離心力,在基板W的下表面與保護碟10之間會產生朝向徑向外方的氣流,由於所述氣流,在第2進入抑制構件13P的周邊,基板W的下表面與保護碟10之間的壓力有時達到規定值以上。此時,基板W的下表面與保護碟10之間的空間A內的氣體會自基板W的下表面與保護碟10之間的空間A排出至外部。The ejection force generated by the supply of the gas from the gas supply unit 11 or the centrifugal force during the rotation of the substrate W causes an airflow toward the outside in the radial direction between the lower surface of the substrate W and the protective disk 10, The airflow may be equal to or higher than a predetermined value between the lower surface of the substrate W and the protective disk 10 around the second entrance suppressing member 13P. At this time, the gas in the space A between the lower surface of the substrate W and the protective disk 10 is discharged to the outside from the space A between the lower surface of the substrate W and the protective disk 10.
另一方面,較第2進入抑制構件13P更靠徑向外方的空間與空間A不同,不會藉由氣體供給單元11或離心力而主動地供給氣體。因此,較第2進入抑制構件13P更靠徑向外方的空間與空間A內的第2進入抑制構件13P的周邊的部分相比較,壓力更難以上升。因此,可抑制氣流F自外部進入至基板W的下表面與保護碟10之間的空間A。On the other hand, the space radially outward of the second entry suppressing member 13P is different from the space A, and the gas is not actively supplied by the gas supply unit 11 or the centrifugal force. Therefore, the pressure is more difficult to rise than the portion around the second entrance suppressing member 13P in the space A in the space radially outward of the second entry suppressing member 13P. Therefore, it is possible to suppress the airflow F from entering the space A between the lower surface of the substrate W and the protective disk 10 from the outside.
因此,可防止基板W的下表面與保護碟10之間的壓力過度增大,並且可抑制氣流F自基板W的下表面的周緣部與保持銷20之間進入至基板W的下表面與保護碟10之間的空間A。Therefore, it is possible to prevent an excessive increase in the pressure between the lower surface of the substrate W and the protective disk 10, and it is possible to suppress the airflow F from entering between the peripheral portion of the lower surface of the substrate W and the holding pin 20 to the lower surface of the substrate W and protection. Space A between the discs 10.
又,由於第2進入抑制構件13P由多孔材料形成,故而難以使處理液的霧氣通過。因此,可進一步抑制液體自外部進入至基板W的下表面與保護碟10之間的空間A。Further, since the second entrance suppressing member 13P is formed of a porous material, it is difficult to pass the mist of the treatment liquid. Therefore, the liquid A can be further prevented from entering the space A between the lower surface of the substrate W and the protective disk 10 from the outside.
又,第2進入抑制構件13P包含保護碟接觸部96,所述保護碟接觸部96在保護碟10位於接近位置的狀態下,自上方與保護碟10的周緣部相接觸。因此,可堵塞自保護碟10與各保持銷20之間進入至基板W的下表面與保護碟10之間的空間A的氣流流入至基板W的下表面與保護碟10之間的通道。因此,可抑制自保護碟10與保持銷20之間流入至基板W的下表面與保護碟10之間的空間A的氣流的產生。Further, the second entrance suppressing member 13P includes a protective disk contact portion 96 that comes into contact with the peripheral edge portion of the protective disk 10 from above in a state where the protective disk 10 is in the approaching position. Therefore, the airflow which enters between the protective disk 10 and each of the holding pins 20 and enters the space A between the lower surface of the substrate W and the protective disk 10 can flow into the passage between the lower surface of the substrate W and the protective disk 10. Therefore, generation of airflow flowing from the protective disk 10 and the holding pin 20 to the space A between the lower surface of the substrate W and the protective disk 10 can be suppressed.
圖10是本實施形態的第3變形例的保持銷20的周邊的示意圖。圖10中,對與至此為止所說明的構件相同的構件標註相同的參照符號,並省略其說明。FIG. 10 is a schematic view of the periphery of the holding pin 20 according to the third modification of the embodiment. In FIG. 10, members that are the same as those described above are denoted by the same reference numerals, and their description is omitted.
參照圖10,第3變形例的第2進入抑制構件13Q的第2固定部90與本實施形態不同,固定在基板W與保護碟10之間大致水平地延伸的延設構件15上。延設構件15自上方與保護碟10相對向。Referring to Fig. 10, the second fixing portion 90 of the second entrance suppressing member 13Q of the third modification is fixed to the extending member 15 that extends substantially horizontally between the substrate W and the protective disk 10, unlike the present embodiment. The extension member 15 is opposed to the protection disk 10 from above.
延設構件15在俯視時呈大致半圓弧狀。延設構件15在俯視時,在保護碟10的上表面上與缺口10a的周圍的部分10b重合。第3變形例中,保持銷20的對向部20b相對於水平方向而傾斜,且自下方抵接於基板W而對基板W進行支撐。延設構件15包含傾斜部15a,所述傾斜部15a與對向部20b的下端連結,且以與對向部20b大致相同的角度相對於水平方向而傾斜。第3變形例的第2固定部90固定在延設構件15的傾斜部15a上。第3變形例的第2固定部90經由延設構件15而固定在保持銷20上。The extended member 15 has a substantially semi-arc shape in plan view. The extended member 15 overlaps the portion 10b around the notch 10a on the upper surface of the protective disk 10 in plan view. In the third modification, the opposing portion 20b of the holding pin 20 is inclined with respect to the horizontal direction, and abuts against the substrate W from below to support the substrate W. The extending member 15 includes an inclined portion 15a that is coupled to the lower end of the opposing portion 20b and that is inclined with respect to the horizontal direction at substantially the same angle as the opposing portion 20b. The second fixing portion 90 of the third modification is fixed to the inclined portion 15a of the extension member 15. The second fixing portion 90 of the third modification is fixed to the holding pin 20 via the extension member 15 .
第3變形例的第2進入抑制構件13Q與本實施形態同樣地為樹脂製的片材。第2進入抑制構件13Q亦可與第3變形例不同,而與第2變形例的第2進入抑制構件13P(參照圖9)同樣地由海綿狀的多孔材料形成。The second entry suppressing member 13Q of the third modification is a resin sheet as in the present embodiment. The second entry suppressing member 13Q may be formed of a sponge-like porous material in the same manner as the second entry suppressing member 13P (see FIG. 9) of the second modification, unlike the third modified example.
又,如圖10所示,若構成為在保護碟10位於接近位置的狀態下,延設構件15的下表面與保護碟10的上表面(的周緣部)相接觸,則可抑制氣流自保護碟10與各保持銷20之間進入至基板W的下表面與保護碟10之間的空間A。Further, as shown in FIG. 10, when the protective disk 10 is in the close position, the lower surface of the extending member 15 is in contact with the upper surface (the peripheral portion of the protective disk 10), thereby suppressing the airflow self-protection. The disc 10 and each of the holding pins 20 enter a space A between the lower surface of the substrate W and the protective sheet 10.
本發明並不限定於以上所說明的實施形態,而可利用此外其他的形態加以實施。The present invention is not limited to the embodiments described above, and can be implemented in other forms.
例如,亦可不同於所述實施形態,處理液噴嘴40是將處理液的液滴與氣體一併噴射至基板W的上表面的雙流體噴嘴。此時,在處理液噴嘴40上,連結有對處理液噴嘴40供給氮氣等氣體的氣體供給管,在所述氣體供給管上,插裝有切換對處理液噴嘴40供給氣體的有無的氣體閥。並且,對處理液噴嘴40,經由氣體供給管自氣體供給源供給氣體。For example, unlike the above-described embodiment, the processing liquid nozzle 40 is a two-fluid nozzle that ejects droplets of the processing liquid together with the gas onto the upper surface of the substrate W. At this time, a gas supply pipe for supplying a gas such as nitrogen gas to the processing liquid nozzle 40 is connected to the processing liquid nozzle 40, and a gas valve for switching the presence or absence of gas supplied to the processing liquid nozzle 40 is inserted into the gas supply pipe. . Further, the processing liquid nozzle 40 is supplied with gas from a gas supply source via a gas supply pipe.
又,亦可不同於所述實施形態,不設置洗滌單元9,取而代之設置有供給藥液的藥液供給單元。藥液供給單元包含對基板W的上表面供給藥液的藥液供給噴嘴。作為自藥液供給噴嘴供給的藥液,可舉出氟化氫水(Hydrogen Fluoride,HF)、硫酸過氧化氫水混合液(sulfuric acid hydrogen peroxide mixture,SPM)、氨過氧化氫水混合液(SC1)、鹽酸過氧化氫水混合液(SC2)等。藥液供給噴嘴亦可為雙流體噴嘴。在所述構成的基板處理裝置的基板處理中,利用自藥液供給單元供給的藥液對基板W的上表面進行處理之後,藉由自處理液供給單元8供給的DIW等而對基板W的上表面進行清洗。然後,與所述實施形態中的基板處理同樣地,藉由自旋乾燥而使基板W乾燥。Further, unlike the above-described embodiment, the washing unit 9 may not be provided, and a chemical liquid supply unit that supplies the chemical liquid may be provided instead. The chemical solution supply unit includes a chemical supply nozzle that supplies a chemical solution to the upper surface of the substrate W. Hydrogen fluoride (Hydrogen Fluoride (HF), sulfuric acid hydrogen peroxide mixture (SPM), and ammonia hydrogen peroxide water mixture (SC1) are mentioned as the chemical liquid supplied from the chemical liquid supply nozzle. Hydrogen peroxide aqueous solution (SC2), etc. The chemical supply nozzle can also be a two-fluid nozzle. In the substrate processing of the substrate processing apparatus of the above-described configuration, the upper surface of the substrate W is processed by the chemical liquid supplied from the chemical liquid supply unit, and then the substrate W is applied to the substrate W by the DIW or the like supplied from the processing liquid supply unit 8. The upper surface is cleaned. Then, in the same manner as the substrate treatment in the above embodiment, the substrate W is dried by spin drying.
又,當藉由第1進入抑制構件12、第1進入抑制構件12P及第2進入抑制構件13、第2進入抑制構件13P、第2進入抑制構件13Q,基板W的下表面遍及旋轉方向S上的全周而被限制氣流的進入時,亦可與所述實施形態不同,而設置有排除基板W的下表面與保護碟10之間的空間A的氣體的氣體排除單元。In addition, the first entry suppressing member 12, the first entry suppressing member 12P, the second entry suppressing member 13, the second entering suppressing member 13P, and the second entering suppressing member 13Q, the lower surface of the substrate W is spread over the rotational direction S. In the case where the restricted airflow is entered throughout the entire circumference, a gas exhausting unit that excludes the gas in the space A between the lower surface of the substrate W and the protective disk 10 may be provided unlike the above-described embodiment.
又,保護碟10不一定必需與基板W的周緣部相對向,亦可為俯視時小於基板W的圓形狀。在此情況下,較佳的亦為第1彈性接觸部81及第2彈性接觸部91在基板W的下表面的周緣部,和徑向外方端與較徑向外方端稍靠內方(2 mm左右內方)的位置之間的部分相接觸。Further, the protective disk 10 does not necessarily have to face the peripheral edge portion of the substrate W, and may have a circular shape smaller than the substrate W in a plan view. In this case, it is preferable that the first elastic contact portion 81 and the second elastic contact portion 91 are located on the peripheral portion of the lower surface of the substrate W, and the radially outer end is slightly inward of the radially outer end. The part between the positions (inside of 2 mm) is in contact.
對本發明的實施形態已作詳細說明,但該些實施形態僅為用以闡明本發明的技術內容的具體例,本發明不應限定於該些具體例來解釋,本發明的範圍僅藉由隨附的申請專利範圍而限定。The embodiments of the present invention have been described in detail, but the embodiments are merely specific examples for illustrating the technical contents of the present invention. The present invention is not limited to the specific examples, and the scope of the present invention is only The scope of the patent application is limited.
本申請案對應於2017年3月8日向日本專利局提交的日本專利特願2017-44081號,所述申請案的所有揭示內容均藉由引用而編入於本文。The present application corresponds to Japanese Patent Application No. Hei. No. Hei. No. Hei. No. Hei. No. Hei.
1‧‧‧基板處理裝置1‧‧‧Substrate processing unit
2‧‧‧處理單元2‧‧‧Processing unit
3‧‧‧控制器3‧‧‧ Controller
3A‧‧‧處理器3A‧‧‧ processor
3B‧‧‧記憶體3B‧‧‧ memory
5‧‧‧自旋夾盤5‧‧‧ Spin chuck
8‧‧‧處理液供給單元8‧‧‧Processing liquid supply unit
9‧‧‧洗滌單元9‧‧‧Washing unit
10‧‧‧保護碟10‧‧‧Protection disc
10a‧‧‧缺口10a‧‧‧ gap
10b‧‧‧部分Section 10b‧‧‧
11‧‧‧氣體供給單元11‧‧‧ gas supply unit
12、12P‧‧‧第1進入抑制構件12, 12P‧‧‧1st entry suppression member
13、13P、13Q‧‧‧第2進入抑制構件13, 13P, 13Q‧‧‧ second entry suppression member
15‧‧‧延設構件15‧‧‧ Extended components
15a‧‧‧傾斜部15a‧‧‧ inclined section
16‧‧‧腔室16‧‧‧ chamber
20‧‧‧保持銷20‧‧‧ Keep selling
20a‧‧‧夾持部20a‧‧‧ gripping department
20b‧‧‧對向部20b‧‧‧ opposite department
21‧‧‧自旋底座21‧‧‧Spin base
22‧‧‧旋轉軸22‧‧‧Rotary axis
23‧‧‧電動馬達23‧‧‧Electric motor
25‧‧‧開關單元25‧‧‧Switch unit
31‧‧‧刷子31‧‧‧ brushes
32‧‧‧刷子固持器32‧‧‧Brush holder
35‧‧‧刷臂35‧‧‧ brush arm
36‧‧‧轉動軸36‧‧‧Rotary axis
37‧‧‧臂移動機構37‧‧‧ Arm movement mechanism
40‧‧‧處理液噴嘴40‧‧‧Processing liquid nozzle
41‧‧‧處理液供給管41‧‧‧Processing liquid supply pipe
42‧‧‧處理液閥/閥類42‧‧‧Processing valve/valve
50‧‧‧氣體噴嘴50‧‧‧ gas nozzle
51‧‧‧氣體供給管51‧‧‧ gas supply pipe
52‧‧‧氣體閥/閥類52‧‧‧Gas valve/valve
54‧‧‧整流構件54‧‧‧Rectifying components
60‧‧‧保護碟升降單元60‧‧‧protection disc lifting unit
61‧‧‧導軸61‧‧‧Guide axis
62‧‧‧線性軸承62‧‧‧Linear bearings
63‧‧‧法蘭63‧‧‧Flange
80、87‧‧‧第1固定部80, 87‧‧‧1st fixed department
81‧‧‧第1彈性接觸部81‧‧‧1st elastic contact
82‧‧‧支撐突起82‧‧‧Support protrusion
83、93‧‧‧螺桿83, 93‧‧‧ screw
83a‧‧‧螺桿軸83a‧‧‧ Screw shaft
83b‧‧‧頭部83b‧‧‧ head
84‧‧‧螺孔84‧‧‧ screw holes
85‧‧‧插通孔85‧‧‧ inserted through hole
86‧‧‧收容孔86‧‧‧ receiving holes
88‧‧‧第1接觸部88‧‧‧1st contact
89‧‧‧第1連結部89‧‧‧1st link
90、97‧‧‧第2固定部90, 97‧‧‧2nd fixed department
91‧‧‧第2彈性接觸部91‧‧‧2nd elastic contact
92、96‧‧‧保護碟接觸部92, 96‧‧‧Protection disc contact
98‧‧‧第2接觸部98‧‧‧2nd contact
99‧‧‧第2連結部99‧‧‧2nd link
A‧‧‧空間A‧‧‧ space
A1‧‧‧旋轉軸線A1‧‧‧Rotation axis
A2‧‧‧轉動軸線A2‧‧‧ axis of rotation
C‧‧‧載體C‧‧‧ Carrier
CR、IR‧‧‧搬運機器人CR, IR‧‧‧ handling robot
F‧‧‧氣流F‧‧‧Airflow
LP‧‧‧裝載端口LP‧‧‧Load port
S‧‧‧旋轉方向S‧‧‧Rotation direction
S1~S14‧‧‧步驟S1~S14‧‧‧Steps
W‧‧‧基板W‧‧‧Substrate
圖1是用以說明本發明的第1實施形態的基板處理裝置的內部的佈局(layout)的示意性的俯視圖。 圖2是用以說明所述基板處理裝置中所具備的處理單元的構成例的示意圖。 圖3是所述基板處理裝置中所具備的自旋底座的示意性的俯視圖。 圖4A是沿圖3的IVA-IVA線的剖面的示意圖。 圖4B是圖4A的第1固定部的周邊的放大圖。 圖5是沿圖3的V-V線的剖面的示意圖。 圖6是用以說明所述基板處理裝置的主要部分的電性構成的方塊圖。 圖7是用以說明所述基板處理裝置的基板處理的一例的流程圖。 圖8是本實施形態的第1變形例的第1進入抑制構件的周邊的示意圖。 圖9是本實施形態的第2變形例的第2進入抑制構件的周邊的示意圖。 圖10是本實施形態的第3變形例的第2進入抑制構件的周邊的示意圖。1 is a schematic plan view for explaining a layout of the inside of a substrate processing apparatus according to a first embodiment of the present invention. FIG. 2 is a schematic view for explaining a configuration example of a processing unit provided in the substrate processing apparatus. 3 is a schematic plan view of a spin base provided in the substrate processing apparatus. 4A is a schematic view of a cross section taken along the line IVA-IVA of FIG. 3. Fig. 4B is an enlarged view of the periphery of the first fixing portion of Fig. 4A. Fig. 5 is a schematic view showing a cross section taken along line V-V of Fig. 3. Fig. 6 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus. FIG. 7 is a flowchart for explaining an example of substrate processing of the substrate processing apparatus. FIG. 8 is a schematic view of the periphery of the first entrance suppressing member according to the first modification of the embodiment. FIG. 9 is a schematic view of the periphery of a second entry suppressing member according to a second modification of the embodiment. FIG. 10 is a schematic view of the periphery of a second entry suppressing member according to a third modified example of the embodiment.
Claims (9)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017044081A JP6885753B2 (en) | 2017-03-08 | 2017-03-08 | Substrate processing equipment and substrate processing method |
| JP2017-044081 | 2017-03-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201834000A true TW201834000A (en) | 2018-09-16 |
| TWI658495B TWI658495B (en) | 2019-05-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107106067A TWI658495B (en) | 2017-03-08 | 2018-02-23 | Substrate processing apparatus and substrate processing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6885753B2 (en) |
| TW (1) | TWI658495B (en) |
| WO (1) | WO2018163749A1 (en) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4028346B2 (en) * | 2002-10-17 | 2007-12-26 | 東京エレクトロン株式会社 | Liquid processing equipment |
| JP4397299B2 (en) * | 2004-07-30 | 2010-01-13 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| JP5310693B2 (en) * | 2010-10-07 | 2013-10-09 | 東京エレクトロン株式会社 | Liquid processing equipment |
| JP5775339B2 (en) * | 2011-03-22 | 2015-09-09 | 株式会社Screenホールディングス | Substrate processing equipment |
| JP5795920B2 (en) * | 2011-09-21 | 2015-10-14 | 株式会社Screenホールディングス | Substrate processing equipment |
| US9385020B2 (en) * | 2011-12-19 | 2016-07-05 | SCREEN Holdings Co., Ltd. | Substrate holding and rotating device, substrate treatment apparatus including the device, and substrate treatment method |
| JP6143572B2 (en) * | 2013-06-18 | 2017-06-07 | 株式会社Screenホールディングス | Substrate holding and rotating apparatus, substrate processing apparatus including the same, and substrate processing method |
| JP6472666B2 (en) * | 2015-01-19 | 2019-02-20 | 株式会社ディスコ | Holding method for plate workpiece |
| US10037902B2 (en) * | 2015-03-27 | 2018-07-31 | SCREEN Holdings Co., Ltd. | Substrate processing device and substrate processing method |
-
2017
- 2017-03-08 JP JP2017044081A patent/JP6885753B2/en active Active
-
2018
- 2018-02-15 WO PCT/JP2018/005308 patent/WO2018163749A1/en not_active Ceased
- 2018-02-23 TW TW107106067A patent/TWI658495B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018163749A1 (en) | 2018-09-13 |
| JP6885753B2 (en) | 2021-06-16 |
| JP2018148132A (en) | 2018-09-20 |
| TWI658495B (en) | 2019-05-01 |
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