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TW201823049A - Thermal printer head module and method for manufacturing the same - Google Patents

Thermal printer head module and method for manufacturing the same Download PDF

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Publication number
TW201823049A
TW201823049A TW105143219A TW105143219A TW201823049A TW 201823049 A TW201823049 A TW 201823049A TW 105143219 A TW105143219 A TW 105143219A TW 105143219 A TW105143219 A TW 105143219A TW 201823049 A TW201823049 A TW 201823049A
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TW
Taiwan
Prior art keywords
layer
twin
electrode pattern
head module
thermal head
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Application number
TW105143219A
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Chinese (zh)
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TWI631022B (en
Inventor
陳尚緯
黃裕緯
王威勝
黃偉聖
李汶雄
Original Assignee
謙華科技股份有限公司
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Priority to TW105143219A priority Critical patent/TWI631022B/en
Priority to KR1020170040730A priority patent/KR20180075350A/en
Priority to JP2017091027A priority patent/JP6328295B1/en
Publication of TW201823049A publication Critical patent/TW201823049A/en
Application granted granted Critical
Publication of TWI631022B publication Critical patent/TWI631022B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335Structure of thermal heads
    • B41J2/33505Constructional details
    • B41J2/3351Electrode layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335Structure of thermal heads
    • B41J2/33505Constructional details
    • B41J2/3353Protective layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/345Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads characterised by the arrangement of resistors or conductors
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electronic Switches (AREA)

Abstract

A method for manufacturing a thermal printer head module includes steps as follows. Two opposite sides of a silicon pillar are longitudinally cut respectively for obtaining a crystalline silicon substrate. A glaze layer, a heating resistor layer, an electrode pattern layer and an insulating protective layer are sequentially formed on the crystalline silicon substrate. A control circuit module is electrically connected to the electrode pattern layer.

Description

熱印頭模組及其製造方法  Thermal head module and manufacturing method thereof  

本發明有關於一種熱印頭模組及其製造方法,尤指一種印表機之熱印頭模組及其製造方法。 The invention relates to a thermal head module and a manufacturing method thereof, in particular to a thermal head module of a printer and a manufacturing method thereof.

按,採用熱能轉印原理之印表機主要係利用熱印頭(thermal print head,TPH)模組來加熱色帶,使色帶上的染料氣化,而轉印到一載體(例如紙或塑膠)上,並依加熱的時間長短或加熱的溫度高低來形成連續的色階。一般來說,熱印頭模組包括陶瓷基板、印刷線路板、封裝膠層、積體電路、金絲(金絲用途??)等構成。 According to the principle of thermal transfer printing, the printer mainly uses a thermal print head (TPH) module to heat the ribbon, vaporize the dye on the ribbon, and transfer it to a carrier (such as paper or On the plastic), depending on the length of time of heating or the temperature of the heating, a continuous color gradation is formed. In general, the thermal head module includes a ceramic substrate, a printed wiring board, an encapsulant layer, an integrated circuit, and a gold wire (gold wire use).

然而,目前市售熱印頭模組的尺寸最大都僅處於2-8吋(後稱小尺寸)左右,無法持續提供更大尺寸之熱印頭模組,或無法一次性產出大型尺寸的印刷產品。 However, the size of the currently available hot stamping head modules is only about 2-8 inches (hereinafter referred to as small size), and it is impossible to continuously provide a larger size thermal head module, or it is impossible to produce a large size at one time. Printed products.

本發明之一目的在於提供一種熱印頭模組及其製造方法,用以解決以上先前技術所提到的困難,意即,用以提 供具有高大尺寸與高度平整基板的熱印頭模組,以解決上述熱能轉印原理之印表機無法大型化的缺點。 An object of the present invention is to provide a thermal head module and a manufacturing method thereof for solving the difficulties mentioned in the prior art, that is, to provide a thermal head module having a high-sized and highly flat substrate. In order to solve the above-mentioned thermal energy transfer principle, the printer cannot be enlarged.

依據本發明之一實施方式,此種熱印頭模組之製造方法包含步驟如下。縱切一矽晶柱之二相對側以取得一矽晶基板。依序形成一釉面層、一發熱電阻層、一電極圖案層、一絕緣保護層於矽晶基板上。電連接一控制電路模組至電極圖案層。 According to an embodiment of the present invention, a method of manufacturing such a thermal head module includes the following steps. A pair of opposite sides of the crystal column are longitudinally cut to obtain a twinned substrate. A glaze layer, a heat generating resistor layer, an electrode pattern layer and an insulating protective layer are sequentially formed on the twin crystal substrate. Electrically connecting a control circuit module to the electrode pattern layer.

在本發明一或複數個實施方式中,矽晶柱為單晶矽晶柱或多晶矽晶柱。 In one or more embodiments of the invention, the twin column is a single crystal twin column or a polycrystalline germanium column.

在本發明一或複數個實施方式中,矽晶基板之長度為12~64吋或64吋以上。 In one or more embodiments of the invention, the length of the twinned substrate is 12 to 64 Å or more.

在本發明一或複數個實施方式中,縱切矽晶柱之二相對側以取得矽晶基板更包含細部步驟如下。沿矽晶柱之一軸心方向,自矽晶柱之一端面至另一端面,筆直地切割矽晶柱之二相對側以取得位於矽晶柱之二相對側之間的一中間層板。研磨中間層板,以形成包含二相對平整表面之矽晶基板。 In one or more embodiments of the present invention, the step of longitudinally cutting the opposite sides of the twin crystal column to obtain the twinned substrate further includes the following steps. Along one of the axial directions of the twin column, from one end face of the twin column to the other end face, the opposite sides of the twin column are straightly cut to obtain an intermediate layer between the opposite sides of the twin column. The intermediate laminate is ground to form a twinned substrate comprising two relatively flat surfaces.

在本發明一或複數個實施方式中,依序形成釉面層、發熱電阻層、電極圖案層、絕緣保護層於矽晶基板上更包含細部步驟如下。全面地形成一主釉層位於矽晶基板之一面。形成多個間隔並排之釉質凸條於主釉層背對矽晶基板之一面,其中每一釉質凸條為連續地。 In one or more embodiments of the present invention, the steps of sequentially forming the glaze layer, the heat generating resistive layer, the electrode pattern layer, and the insulating protective layer on the twinned substrate further include the following steps. A main glaze layer is formed on one side of the twin crystal substrate. A plurality of spaced-apart enamel ridges are formed on the side of the main glaze layer facing away from the twinned substrate, wherein each enamel ridge is continuous.

在本發明一或複數個實施方式中,依序形成釉面層、發熱電阻層、電極圖案層、絕緣保護層於矽晶基板上更包含細部步驟如下。形成一導電金屬層於發熱電阻層相對釉面層 之一面。蝕刻導電金屬層分別重疊釉質凸條之局部位置,以分別顯露出發熱電阻層覆蓋釉質凸條所匹配之隆起外型。 In one or more embodiments of the present invention, the steps of sequentially forming the glaze layer, the heat generating resistive layer, the electrode pattern layer, and the insulating protective layer on the twinned substrate further include the following steps. A conductive metal layer is formed on one side of the heat generating resistor layer opposite to the glaze layer. The etched conductive metal layer overlaps the local positions of the enamel ridges respectively to expose the ridge shape of the enamel ridges covered by the heat-generating resist layer.

在本發明一或複數個實施方式中,電連接控制電路模組至電極圖案層上更包含細部步驟如下。蝕刻絕緣保護層以形成一缺口,缺口露出一部分之電極圖案層。將控制電路模組經缺口電性導接電極圖案層。 In one or more embodiments of the present invention, the step of electrically connecting the control circuit module to the electrode pattern layer further includes detailing as follows. The insulating protective layer is etched to form a notch, and the notch exposes a portion of the electrode pattern layer. The control circuit module is electrically connected to the electrode pattern layer via the notch.

依據本發明之另一實施方式,此種熱印頭模組包含一矽晶基板、一釉面層、一發熱電阻層、一電極圖案層、一絕緣保護層與一控制電路模組。矽晶基板具有二相對平整表面。釉面層包含一主釉層與多個釉質凸條。主釉層覆蓋於矽晶基板之其中一平整表面。這些釉質凸條間隔並排於主釉層相對矽晶基板之一面。發熱電阻層覆蓋主釉層與這些釉質凸條。電極圖案層位於發熱電阻層相對釉面層之一面。絕緣保護層位於電極圖案層。控制電路模組電連接電極圖案層。 According to another embodiment of the present invention, the thermal head module comprises a twinned substrate, a glazed layer, a heat generating resistor layer, an electrode pattern layer, an insulating protective layer and a control circuit module. The twinned substrate has two relatively flat surfaces. The glaze layer comprises a main glaze layer and a plurality of enamel ridges. The main glaze layer covers one of the flat surfaces of the twinned substrate. These enamel ridges are spaced side by side on one side of the main glaze layer relative to the twinned substrate. A heating resistor layer covers the main glaze layer and these enamel ridges. The electrode pattern layer is located on one side of the heat generating resistor layer opposite to the glaze layer. The insulating protective layer is located on the electrode pattern layer. The control circuit module electrically connects the electrode pattern layers.

在本發明一或複數個實施方式中,矽晶基板為一體成形。矽晶基板之最大長度為12吋~64吋。 In one or more embodiments of the invention, the twinned substrate is integrally formed. The maximum length of the twinned substrate is 12吋~64吋.

在本發明一或複數個實施方式中,矽晶基板包含單矽晶或多矽晶。 In one or more embodiments of the invention, the twinned substrate comprises a single twin or multiple twins.

以上所述僅係用以闡述本發明所欲解決的問題、解決問題的技術手段、及其產生的功效等等,本發明之具體細節將在下文的實施方式及相關圖式中詳細介紹。 The above description is only for explaining the problems to be solved by the present invention, the technical means for solving the problems, the effects thereof, and the like, and the specific details of the present invention will be described in detail in the following embodiments and related drawings.

6-6‧‧‧線段 6-6‧‧‧ segments

10‧‧‧製造方法 10‧‧‧Manufacturing methods

101~106‧‧‧步驟 101~106‧‧‧Steps

1011~1013‧‧‧細部步驟 1011~1013‧‧‧Detailed steps

200‧‧‧矽晶柱 200‧‧‧矽晶柱

201‧‧‧第一端面 201‧‧‧ first end face

202‧‧‧第二端面 202‧‧‧second end face

203‧‧‧圓周面 203‧‧‧circular surface

210‧‧‧軸心方向 210‧‧‧Axis direction

220‧‧‧小弓形柱體 220‧‧‧Small arch cylinder

221‧‧‧小弓形面 221‧‧‧Small bow

222‧‧‧弦 222‧‧‧ string

223‧‧‧劣弧 223‧‧‧Inferior arc

230‧‧‧大弓形柱體 230‧‧‧ Large arch cylinder

231‧‧‧大弓形面 231‧‧‧Big arched face

232‧‧‧弦 232‧‧‧string

233‧‧‧優弧 233‧‧‧Excellent arc

240‧‧‧中間層板 240‧‧‧Intermediate laminate

241‧‧‧中間層板之二相對主面 241‧‧‧The opposite side of the middle layer

250‧‧‧晶柱切割機 250‧‧‧ crystal column cutting machine

260‧‧‧熱印頭結構 260‧‧‧ Thermal head structure

300‧‧‧熱印頭模組 300‧‧‧hot head module

310‧‧‧矽晶基板 310‧‧‧Crystal substrate

311、312‧‧‧平整表面 311, 312‧‧ ‧ flat surface

320‧‧‧釉面層 320‧‧‧glaze

321‧‧‧主釉層 321‧‧‧Main glaze

322‧‧‧釉質凸條 322‧‧‧Enamel ribs

330‧‧‧發熱電阻層 330‧‧‧heating resistance layer

331‧‧‧隆起外型 331‧‧‧Uplift appearance

340‧‧‧電極圖案層 340‧‧‧electrode pattern layer

341‧‧‧導電金屬層 341‧‧‧ Conductive metal layer

342‧‧‧蝕刻開口 342‧‧‧ etching opening

350‧‧‧絕緣保護層 350‧‧‧Insulation protective layer

351‧‧‧缺口 351‧‧‧ gap

360‧‧‧控制電路模組 360‧‧‧Control circuit module

361‧‧‧薄膜覆晶封裝結構 361‧‧‧film flip chip package structure

362‧‧‧工作晶片 362‧‧‧Working chip

363‧‧‧連接單元 363‧‧‧ Connection unit

364‧‧‧焊料 364‧‧‧ solder

365‧‧‧異方性導電膠 365‧‧‧ anisotropic conductive adhesive

370‧‧‧散熱結構 370‧‧‧ Heat dissipation structure

G‧‧‧間距 G‧‧‧ spacing

為讓本發明之上述和其他目的、特徵、優點與實 施例能更明顯易懂,所附圖式之說明如下:第1圖繪示依照本發明一實施方式之熱印頭模組之製造方法的流程圖;第2A圖繪示第1圖步驟101之細部流程圖;第2B圖~第2C圖繪示第2A圖之操作示意圖;第3A圖~第3I圖繪示第1圖之操作示意圖;第4圖繪示依照本發明一實施方式之熱印頭之上視圖;第5圖繪示依照本發明一實施方式之熱印頭模組之示意圖;以及第6圖繪示第5圖沿線段6-6之剖視圖。 The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood. The description of the drawings is as follows: FIG. 1 illustrates a method of manufacturing a thermal head module according to an embodiment of the present invention. FIG. 2A is a detailed flow chart of step 101 of FIG. 1; FIG. 2B to FIG. 2C are diagrams showing operation of FIG. 2A; and FIG. 3A to FIG. 3I are diagrams showing operation of FIG. 4 is a top view of a thermal head according to an embodiment of the present invention; FIG. 5 is a schematic view of a thermal head module according to an embodiment of the present invention; and FIG. 6 is a view along line 5 Sectional view of Section 6-6.

以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。 The embodiments of the present invention are disclosed in the following drawings, and the details of However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.

習知技術大多採用陶瓷基板作為熱印頭的基板,然而,在加熱製作大型化陶瓷基板之製程中時,發明人發現陶瓷基板常常因為尺寸過大而產生翹曲等不良外觀,因此陶瓷基板無法提供用以配置加熱點之平整表面,進而無法提高熱印頭模組之良率。有鑒於此,本發明藉由具有筆直特性之晶柱製成高平整度之矽晶板取代習知之陶瓷基板,以製成具有高大尺寸 與高度平整基板的熱印頭模組,以致得以一次性產出大型尺寸的印刷產品。需理解到,本發明之熱印頭模組可應用於任何熱能轉印原理之印表機,例如熱昇華印表機、熱轉印印表機、標籤列印機或海報列印機等類似領域。 Conventional techniques mostly use a ceramic substrate as a substrate for a thermal head. However, in the process of heating a large-sized ceramic substrate, the inventors have found that a ceramic substrate often has a poor appearance such as warpage due to an excessive size, so that the ceramic substrate cannot be provided. It is used to configure the flat surface of the heating point, so that the yield of the thermal head module cannot be improved. In view of the above, the present invention replaces a conventional ceramic substrate by a crystal plate having a straight characteristic and a high flatness to form a thermal head module having a high-sized and highly flat substrate, so that it can be disposable. Produce large-size printed products. It should be understood that the thermal head module of the present invention can be applied to any printer capable of thermal transfer printing, such as a thermal sublimation printer, a thermal transfer printer, a label printer or a poster printer, and the like. field.

第1圖繪示依照本發明一實施方式之熱印頭模組之製造方法的流程圖。如第1圖所示,在本實施方式中,熱印頭模組之製造方法10包含步驟101~步驟106如下。在步驟101中,提供一矽晶基板。在步驟102中,形成一釉面層於矽晶基板上。在步驟103中,形成一發熱電阻層於釉面層上。在步驟104中,形成一電極圖案層於發熱電阻層上。在步驟105中,形成一絕緣保護層於電極圖案層上。在步驟106中,電連接一控制電路模組至電極圖案層。 FIG. 1 is a flow chart showing a method of manufacturing a thermal head module according to an embodiment of the present invention. As shown in FIG. 1, in the present embodiment, the manufacturing method 10 of the thermal head module includes steps 101 to 106 as follows. In step 101, a twinned substrate is provided. In step 102, a glazed layer is formed on the twinned substrate. In step 103, a heat generating resistor layer is formed on the glaze layer. In step 104, an electrode pattern layer is formed on the heat generating resistor layer. In step 105, an insulating protective layer is formed on the electrode pattern layer. In step 106, a control circuit module is electrically connected to the electrode pattern layer.

第2A圖繪示第1圖步驟101之細部流程圖。第2B圖~第2C圖繪示第2A圖之操作示意圖。在本實施方式中,如第2A圖所示,在上述步驟101中更包含細部步驟1011~1013如下。在細部步驟1011中,如第2B圖所示,提供一矽晶柱200。舉例來說,藉由長晶製程以形成一矽晶柱200。矽晶柱200近似為圓柱體,包含第一端面201、第二端面202與圓周面203。第一端面201相對第二端面202,圓周面203介於第一端面201與第二端面202之間,且圍繞第一端面201與第二端面202。此外,矽晶柱200具有一軸心方向210,意即,矽晶柱200沿此軸心方向210延伸。 FIG. 2A is a detailed flow chart showing the step 101 of FIG. 1. 2B to 2C are schematic diagrams showing the operation of FIG. 2A. In the present embodiment, as shown in FIG. 2A, the detail steps 1011 to 1013 are further included in the above-described step 101 as follows. In the detail step 1011, as shown in FIG. 2B, a twin column 200 is provided. For example, a crystal column 200 is formed by a crystal growth process. The twin column 200 is approximately a cylinder and includes a first end surface 201, a second end surface 202, and a circumferential surface 203. The first end surface 201 is opposite to the second end surface 202, and the circumferential surface 203 is interposed between the first end surface 201 and the second end surface 202, and surrounds the first end surface 201 and the second end surface 202. In addition, the twin column 200 has an axial direction 210, that is, the twin column 200 extends in the axial direction 210.

接著,在細部步驟1012中,如第2B圖與第2C圖所示,縱切矽晶柱200之二相對側。舉例來說,藉由一晶柱切割 機250對矽晶柱200進行切片,具體來說,藉由晶柱切割機250沿此矽晶柱200之軸心方向210,自矽晶柱200之第一端面201通過第二端面202筆直地切割矽晶柱200二次,以致分別從矽晶柱200上移除一小弓形柱體220與一大弓形柱體230,進而於其二者之間取得一中間層板240。應定義的是,上述小弓形柱體220之二相對端面皆為包含弦222與劣弧223之小弓形面221,上述大弓形柱體230之二相對端面皆為包含弦232與優弧233之大弓形面231。 Next, in the detail step 1012, as shown in FIGS. 2B and 2C, the opposite sides of the twin column 200 are longitudinally cut. For example, the twin column 200 is sliced by a crystal column cutter 250, specifically, by the crystal column cutter 250 along the axial direction 210 of the twin column 200, from the first column 200 An end surface 201 straightly cuts the twin column 200 twice through the second end surface 202, so that a small arcuate cylinder 220 and a large arcuate cylinder 230 are respectively removed from the twin column 200, thereby obtaining between the two. An intermediate laminate 240. It should be understood that the opposite end faces of the two small arcuate cylinders 220 are the small arcuate faces 221 including the chords 222 and the inferior arcs 223, and the opposite end faces of the two large arcuate cylinders 230 include the chords 232 and the superior arcs 233. Large bow surface 231.

最後,在細部步驟1013中,接著,在取得中間層板240後,研磨中間層板240之二相對主面241,以形成上述矽晶基板。如此,相較於陶瓷基板之形成需要通過加熱製程,矽晶基板之取得不須通過加熱製程,故,更可簡化製程而降低製造成本。 Finally, in the detail step 1013, next, after the intermediate layer plate 240 is obtained, the two opposite main faces 241 of the intermediate layer plate 240 are ground to form the twinned substrate. In this way, compared with the formation of the ceramic substrate, it is necessary to pass the heating process, and the acquisition of the twinned substrate does not need to be performed by the heating process, so that the manufacturing process can be simplified and the manufacturing cost can be reduced.

此外,為了提高生產效率,上述之細部步驟1012之其他實施方式中,也可以透過晶柱切割機250沿矽晶柱200之軸心方向210,自矽晶柱200之第一端面201通過第二端面202筆直地切割矽晶柱200多次(未示於圖中),以致分別從矽晶柱200上移除相同尺寸之二小弓形柱體(參考第2C圖之小弓形柱體220),進而於其二者之間取得多個彼此平行配置之板層(參考第2C圖之中間層板240),以便後續研磨每一板層之二相對主面。完成研磨後之任一板層即可當作上述矽晶基板。 In addition, in order to improve the production efficiency, in the other embodiments of the detailed step 1012, the crystal column cutter 250 may pass through the axis direction 210 of the twin column 200, and pass through the second end 201 of the twin column 200. The end face 202 straightly cuts the twin column 200 times (not shown) so that two small arcuate cylinders of the same size are removed from the twin column 200 (refer to the small arcuate cylinder 220 of FIG. 2C), Further, a plurality of plate layers arranged in parallel with each other are obtained between the two (refer to the intermediate layer plate 240 of FIG. 2C) for subsequently grinding the opposite main faces of each of the plate layers. Any of the layers after the completion of the grinding can be used as the above-mentioned twinned substrate.

第3A圖~第3H圖繪示第1圖之操作示意圖。第4圖繪示依照本發明一實施方式之熱印頭之上視圖。如第3A圖所示,在一實施方式中,上述所取出之矽晶基板310呈矩形體, 且此矽晶基板310具有二相對平整表面311、312,矽晶基板310之每一平整表面311、312之長度例如為36吋;或者,在一實施方式中,矽晶基板310之每一平整表面311、312之長度例如至少為12吋~64吋之範圍中。 3A to 3H are schematic views showing the operation of Fig. 1. 4 is a top view of a thermal print head in accordance with an embodiment of the present invention. As shown in FIG. 3A, in one embodiment, the removed twin substrate 310 has a rectangular shape, and the twin substrate 310 has two relatively flat surfaces 311, 312, and each flat surface 311 of the twin substrate 310. The length of 312 is, for example, 36 吋; or, in one embodiment, the length of each flat surface 311, 312 of the twinned substrate 310 is, for example, at least in the range of 12 吋 to 64 。.

如第3A圖所示,上述步驟102更具體地包含細部步驟如下。全面地形成一主釉層321位於矽晶基板310之一平整表面311。具體地,採用網版印刷工藝均勻塗覆一釉質漿料層在矽晶基板310之平整表面311,並在高溫下(1000~1200℃)將釉質漿料燒結固化,故,主釉層321用以保存熱能,使其不致輕易流失。接著,如第4圖與第3B圖所示,在形成主釉層321後,間隔形成多個釉質凸條322於主釉層321背對矽晶基板310之一面。具體地,採用網版印刷工藝均勻塗覆多個釉質凸條322在主釉層321背對矽晶基板310之一面。這些釉質凸條322間隔並排於主釉層321上,且每一釉質凸條322呈直線狀,且每一釉質凸條322為連續地形成於主釉層321上,且大致長達例如10吋~64吋。 As shown in FIG. 3A, the above step 102 more specifically includes the detailed steps as follows. A main glaze layer 321 is formed over the entire surface 311 of the twin substrate 310. Specifically, an enamel slurry layer is uniformly coated on the flat surface 311 of the twinned substrate 310 by a screen printing process, and the enamel slurry is sintered and solidified at a high temperature (1000 to 1200 ° C), so that the main glaze layer 321 is used. In order to save heat, it will not be easily lost. Next, as shown in FIGS. 4 and 3B, after the main glaze layer 321 is formed, a plurality of enamel ridges 322 are formed at intervals on the surface of the main glaze layer 321 opposite to the twinned substrate 310. Specifically, a plurality of enamel ridges 322 are uniformly coated by the screen printing process on the side of the main glaze layer 321 facing away from the twinned substrate 310. The enamel ridges 322 are spaced apart from each other on the main glaze layer 321 , and each enamel ridge 322 is linear, and each enamel ridge 322 is continuously formed on the main glaze layer 321 and is substantially as long as, for example, 10 吋. ~64吋.

如第3C圖所示,上述步驟103更具體地包含細部步驟如下。全面地形成一發熱電阻層330於主釉層321與釉質凸條322上,使得發熱電阻層330全面覆蓋主釉層321與這些釉質凸條322後,得以對應地形成匹配這些釉質凸條322的隆起外型331。 As shown in Fig. 3C, the above step 103 more specifically includes the detailed steps as follows. A heat generating resistive layer 330 is formed on the main glaze layer 321 and the enamel ridges 322 so that the heat generating resistive layer 330 completely covers the main glaze layer 321 and the enamel ridges 322, and correspondingly forms the matching enamel ridges 322. Uplifted shape 331.

如第3D圖所示,上述步驟104更具體地包含細部步驟如下。形成一導電金屬層341(例如鋁、銅、銀或金)於發熱電阻層330相對釉面層320之一面;接著,在形成導電金屬 層341後,如第3E圖所示,蝕刻導電金屬層341分別重疊這些釉質凸條322之局部位置,以致導電金屬層341對應這些釉質凸條322之局部位置分別形成蝕刻開口342,使得導電金屬層341分別從其形成之蝕刻開口342露出發熱電阻層330之上述隆起外型331。具體來說,於發熱電阻層330相對釉面層320之一面塗布光阻劑,藉由PEP(photo engraving process)實施光阻劑之圖案化。 As shown in FIG. 3D, the above step 104 more specifically includes the detailed steps as follows. Forming a conductive metal layer 341 (for example, aluminum, copper, silver or gold) on the surface of the heat-generating resistor layer 330 opposite to the glaze layer 320; then, after forming the conductive metal layer 341, etching the conductive metal layer as shown in FIG. 3E 341 respectively overlap the local positions of the enamel ridges 322, so that the conductive metal layer 341 forms an etch opening 342 corresponding to the local positions of the enamel ridges 322, respectively, so that the conductive metal layer 341 exposes the heat generating resist layer 330 from the etch opening 342 formed therein. The above raised shape 331. Specifically, a photoresist is coated on one surface of the heat-generating resistor layer 330 with respect to the glaze layer 320, and patterning of the photoresist is performed by a PEP (photo engraving process).

如第3F圖所示,上述步驟105具體地包含細部步驟如下。將絕緣保護層350全面覆蓋於電極圖案層340上,其中絕緣保護層350之一部分覆蓋電極圖案層340,絕緣保護層350之另一部分進入蝕刻開口342以覆蓋發熱電阻層330之上述隆起外型331並緊密接著發熱電阻層330。接著,在形成絕緣保護層350後,如第3G圖所示,局部蝕刻絕緣保護層350以形成一缺口351。此缺口351露出一部分之電極圖案層340。如此,形成一熱印頭結構260。 As shown in FIG. 3F, the above step 105 specifically includes the detailed steps as follows. The insulating protective layer 350 is entirely covered on the electrode pattern layer 340, wherein one portion of the insulating protective layer 350 partially covers the electrode pattern layer 340, and another portion of the insulating protective layer 350 enters the etching opening 342 to cover the above-mentioned raised shape 331 of the heating resistor layer 330. The heating resistor layer 330 is closely followed. Next, after the insulating protective layer 350 is formed, as shown in FIG. 3G, the insulating protective layer 350 is partially etched to form a notch 351. This notch 351 exposes a portion of the electrode pattern layer 340. As such, a thermal print head structure 260 is formed.

如第3H圖所示,上述步驟106具體地包含細部步驟如下。將控制電路模組360經缺口351電性導接熱印頭結構260之電極圖案層340。控制電路模組360例如為薄膜覆晶封裝結構361(Chip on Film,COF)、工作晶片362與電路板(印刷電路板或可撓性電路板)的組合。 As shown in FIG. 3H, the above step 106 specifically includes the detailed steps as follows. The control circuit module 360 is electrically connected to the electrode pattern layer 340 of the thermal head structure 260 via the notch 351. The control circuit module 360 is, for example, a combination of a chip on film (COF), a work chip 362, and a circuit board (a printed circuit board or a flexible circuit board).

在本實施方式中,為了使熱印頭模組300在不使用時,能有效將熱能散去,上述電連接控制電路模組360之步驟後,如第3I圖所示,本實施方式之製造方法更包含,連接一散熱結構370於矽晶基板310之另一平整表面312,即矽晶基板 310背對釉面層320之一面。需一提的是,為方便命名,以上尚未連接控制電路模組360與散熱結構370之熱印頭模組300暫稱熱印頭結構260。 In the present embodiment, in order to allow the thermal head module 300 to dissipate heat efficiently when not in use, after the step of electrically connecting the control circuit module 360, as shown in FIG. 3I, the manufacturing of the present embodiment The method further includes connecting a heat dissipation structure 370 to the other planar surface 312 of the twinned substrate 310, that is, the twinned substrate 310 faces away from one side of the glazed layer 320. It should be noted that, for convenience of naming, the thermal head module 300, which has not been connected to the control circuit module 360 and the heat dissipation structure 370, is temporarily referred to as a thermal head structure 260.

如第3I圖所示,熱印頭模組300包含一矽晶基板310、一釉面層320、一發熱電阻層330、一電極圖案層340、一絕緣保護層350、一控制電路模組360與一散熱結構370。矽晶基板310具有二相對平整表面311、312。釉面層320包含一主釉層321與多個釉質凸條322。主釉層321覆蓋於矽晶基板310之其中一平整表面311。這些釉質凸條322間隔並排於主釉層321相對矽晶基板310之一面。發熱電阻層330覆蓋主釉層321與這些釉質凸條322。電極圖案層340位於發熱電阻層330相對釉面層320之一面。絕緣保護層350位於電極圖案層340。控制電路模組360電連接電極圖案層340。散熱結構370位於矽晶基板310之另一平整表面312。在本實施方式中,矽晶基板310為一體成形,例如矽晶基板310之最大長度為12吋~64吋。此外,矽晶基板310包含單矽晶或多矽晶。任二釉質凸條322之間的間距G(第4圖)為0.5~2公分。然而,本發明不限於此。 As shown in FIG. 3I , the thermal head module 300 includes a twin substrate 310 , a glaze layer 320 , a heat generating resistor layer 330 , an electrode pattern layer 340 , an insulating protective layer 350 , and a control circuit module 360 . With a heat dissipation structure 370. The twin substrate 310 has two relatively flat surfaces 311, 312. The glaze layer 320 includes a main glaze layer 321 and a plurality of enamel ridges 322. The main glaze layer 321 covers one of the flat surfaces 311 of the twin substrate 310. These enamel ridges 322 are spaced side by side with respect to one side of the main glaze layer 321 with respect to the twinned substrate 310. The heating resistor layer 330 covers the main glaze layer 321 and the enamel ridges 322. The electrode pattern layer 340 is located on one side of the heat-generating resistance layer 330 opposite to the glaze layer 320. The insulating protective layer 350 is located on the electrode pattern layer 340. The control circuit module 360 electrically connects the electrode pattern layer 340. The heat dissipation structure 370 is located on another flat surface 312 of the twin substrate 310. In the present embodiment, the twinned substrate 310 is integrally formed. For example, the maximum length of the twinned substrate 310 is 12 吋 to 64 。. Further, the twinned substrate 310 comprises a single twin or multiple twins. The spacing G (Fig. 4) between any two enamel ribs 322 is 0.5 to 2 cm. However, the invention is not limited thereto.

第5圖繪示依照本發明一實施方式之熱印頭模組300之示意圖。第6圖繪示第5圖沿線段6-6之剖視圖。如第5圖與第6圖所示,控制電路模組360包含一薄膜覆晶封裝結構361、多個工作晶片362與一連接單元363。這些工作晶片362位於薄膜覆晶封裝結構361上,且電性連接薄膜覆晶封裝結構361,例如透過焊料364電性連接薄膜覆晶封裝結構361。連接單元363用以連接印表機之內部電路。薄膜覆晶封裝結構361 電性連接熱印頭模組300與連接單元363,例如透過異方性導電膠365(Anisotropic Conductive Film,ACF)電性連接熱印頭模組300之電極圖案層340與連接單元363。如此,熱印頭模組300透過控制電路模組360印表機之內部電路。 FIG. 5 is a schematic view of a thermal head module 300 in accordance with an embodiment of the present invention. Figure 6 is a cross-sectional view along line 6-6 of Figure 5. As shown in FIGS. 5 and 6, the control circuit module 360 includes a thin film flip chip package structure 361, a plurality of work wafers 362, and a connection unit 363. The working wafer 362 is disposed on the thin film flip chip package structure 361 and electrically connected to the thin film flip chip package structure 361, for example, electrically connected to the thin film flip chip package structure 361 through the solder 364. The connecting unit 363 is used to connect the internal circuit of the printer. The film flip-chip package structure 361 is electrically connected to the thermal head module 300 and the connection unit 363, for example, electrically connected to the electrode pattern layer 340 of the thermal head module 300 via an anisotropic conductive film 365 (ACF). Connection unit 363. Thus, the thermal head module 300 passes through the internal circuit of the control circuit module 360 printer.

須了解到,本實施方式中,舉例來說,矽晶柱200之種類為單晶矽晶柱200。選用單晶矽晶柱200的原因是,由於單晶矽晶柱200之特性可以長達90公分以上,並且可以與釉層材料在高溫下共燒,而不會有相分離狀況。此外,相較於陶瓷基板,單矽晶基板310之翹曲度與表面平整度皆遠遠優於陶瓷基板。然而,本發明並不限於此,其他實施方式中,矽晶柱200也可以為多矽晶柱。 It should be understood that, in the present embodiment, for example, the type of the twin column 200 is a single crystal twin column 200. The reason why the single crystal twin column 200 is selected is that the characteristics of the single crystal twin column 200 can be as long as 90 cm or more, and can be co-fired with the glaze layer material at a high temperature without phase separation. In addition, the warpage and surface flatness of the single-crystal substrate 310 are far superior to those of the ceramic substrate compared to the ceramic substrate. However, the present invention is not limited thereto. In other embodiments, the twin column 200 may also be a multi-twist column.

最後,上述所揭露之各實施例中,並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,皆可被保護於本發明中。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Finally, the various embodiments disclosed above are not intended to limit the invention, and those skilled in the art can be protected in various modifications and refinements without departing from the spirit and scope of the invention. In the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Claims (10)

一種熱印頭模組之製造方法,包含:縱切一矽晶柱之二相對側以取得一矽晶基板;依序形成一釉面層、一發熱電阻層、一電極圖案層、一絕緣保護層於該矽晶基板上;以及電連接一控制電路模組至該電極圖案層。  A manufacturing method of a thermal head module comprises: longitudinally cutting two opposite sides of a crystal column to obtain a twinned substrate; sequentially forming a glazed layer, a heating resistor layer, an electrode pattern layer, and an insulation protection Laminating on the twin crystal substrate; and electrically connecting a control circuit module to the electrode pattern layer.   如請求項1所述之熱印頭模組之製造方法,其中該矽晶柱為單晶矽晶柱或多矽晶柱。  The method of manufacturing the thermal head module of claim 1, wherein the twin column is a single crystal twin column or a multi twin column.   如請求項1所述之熱印頭模組之製造方法,其中該矽晶基板之長度為12~64吋。  The method of manufacturing the thermal head module of claim 1, wherein the twin substrate has a length of 12 to 64 。.   如請求項1所述之熱印頭模組之製造方法,其中縱切該矽晶柱之二相對側以取得該矽晶基板,包含:沿該矽晶柱之一軸心方向,自該矽晶柱之一端面至另一端面,筆直地切割該矽晶柱之該二相對側以取得位於該矽晶柱之該二相對側之間的一中間層板;以及研磨該中間層板,以形成包含二相對平整表面之該矽晶基板。  The method of manufacturing the thermal head module of claim 1, wherein longitudinally cutting the opposite sides of the twin column to obtain the twinned substrate comprises: along an axial direction of the twin column, from the axis One end face of the crystal column to the other end face, straightly cutting the opposite sides of the twin column to obtain an intermediate layer between the opposite sides of the twin column; and grinding the intermediate layer to The twinned substrate comprising two relatively flat surfaces is formed.   如請求項1所述之熱印頭模組之製造方法,其中依序形成該釉面層、該發熱電阻層、該電極圖案層、該絕緣保護層於該矽晶基板上,包含:全面地形成一主釉層位於該矽晶基板之一面;以及 形成多個間隔並排之釉質凸條於該主釉層背對該矽晶基板之一面,其中每一該些釉質凸條為連續地。  The method of manufacturing the thermal head module according to claim 1, wherein the glaze layer, the heat generating resistor layer, the electrode pattern layer, and the insulating protective layer are sequentially formed on the twin crystal substrate, including: comprehensively Forming a main glaze layer on one side of the twin crystal substrate; and forming a plurality of spaced-apart enamel ridges on the side of the main glaze layer facing the twinned substrate, wherein each of the enamel ridges is continuous.   如請求項5所述之熱印頭模組之製造方法,其中依序形成該釉面層、該發熱電阻層、該電極圖案層、該絕緣保護層於該矽晶基板上,包含:形成一導電金屬層於該發熱電阻層相對該釉面層之一面;以及蝕刻該導電金屬層分別重疊該些釉質凸條之局部位置,以分別顯露出該發熱電阻層覆蓋該些釉質凸條所匹配之隆起外型。  The method of manufacturing the thermal head module according to claim 5, wherein the glaze layer, the heat generating resistor layer, the electrode pattern layer, and the insulating protective layer are sequentially formed on the twin crystal substrate, comprising: forming a a conductive metal layer on a surface of the heat-generating resistor layer opposite to the glaze layer; and etching the conductive metal layer to overlap respective local positions of the enamel ridges to respectively expose the heat-generating resistor layer to cover the enamel ridges Uplifted appearance.   如請求項1所述之熱印頭模組之製造方法,其中電連接該控制電路模組至該電極圖案層,包含:蝕刻該絕緣保護層以形成一缺口,該缺口露出一部分之該電極圖案層;以及將該控制電路模組經該缺口電性導接該電極圖案層。  The method of manufacturing the thermal head module of claim 1, wherein electrically connecting the control circuit module to the electrode pattern layer comprises: etching the insulating protective layer to form a notch, the notch exposing a portion of the electrode pattern a layer; and electrically connecting the control circuit module to the electrode pattern layer via the gap.   一種熱印頭模組,包含:一矽晶基板,具有二相對平整表面;一釉面層,包含一主釉層與多個釉質凸條,該主釉層覆蓋於該些平整表面其中之一,該些釉質凸條間隔並排於該主釉層相對該矽晶基板之一面;一發熱電阻層,覆蓋該主釉層與該些釉質凸條;一電極圖案層,位於該發熱電阻層相對該釉面層之一面; 一絕緣保護層,位於該電極圖案層;以及一控制電路模組,電連接該電極圖案層。  A thermal print head module comprising: a twin crystal substrate having two relatively flat surfaces; a glazed layer comprising a main glaze layer and a plurality of enamel ridges, the main glaze layer covering one of the flat surfaces The enamel ridges are spaced apart from each other on a side of the main glaze layer opposite to the twin crystal substrate; a heating resistor layer covering the main glaze layer and the enamel ridges; and an electrode pattern layer located on the heat generating resistor layer opposite to the enamel layer One surface of the glaze layer; an insulating protective layer located on the electrode pattern layer; and a control circuit module electrically connecting the electrode pattern layer.   如請求項8所述之熱印頭模組,其中該矽晶基板為一體成形,其中該矽晶基板之最大長度為12吋~64吋。  The thermal head module of claim 8, wherein the twin crystal substrate is integrally formed, wherein the twin crystal substrate has a maximum length of 12 吋 64 64 。.   如請求項8所述之熱印頭模組,其中該矽晶基板包含單矽晶或多矽晶。  The thermal head module of claim 8, wherein the twinned substrate comprises a single twin or multiple twins.  
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI701160B (en) * 2019-05-14 2020-08-11 謙華科技股份有限公司 Thermal printer head module and method for manufacturing the same
TWI702154B (en) * 2019-05-08 2020-08-21 謙華科技股份有限公司 Method for manufacturing thermal print head structure
TWI703053B (en) * 2019-08-16 2020-09-01 謙華科技股份有限公司 Thermal print head structure and manufacturing method of the same
TWI703052B (en) * 2019-08-05 2020-09-01 謙華科技股份有限公司 Thermal print head element, thermal print head element module and manufacturing method of the thermal print head element module
TWI716300B (en) * 2020-03-20 2021-01-11 謙華科技股份有限公司 Manufacturing method of thermal print head

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI678289B (en) * 2018-12-07 2019-12-01 謙華科技股份有限公司 Manufacturing method of thermal head

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591125B2 (en) * 1988-12-07 1997-03-19 カシオ計算機株式会社 Thermal head
JP4284145B2 (en) * 2003-09-29 2009-06-24 有限会社松宮半導体研究所 Method for manufacturing solar cell substrate and solar cell substrate
JP4398766B2 (en) * 2004-03-30 2010-01-13 アルプス電気株式会社 Thermal head and manufacturing method thereof
FR2870988B1 (en) * 2004-06-01 2006-08-11 Michel Bruel METHOD FOR MAKING A MULTI-LAYER STRUCTURE COMPRISING, IN DEPTH, A SEPARATION LAYER
JP5039940B2 (en) * 2005-10-25 2012-10-03 セイコーインスツル株式会社 Heating resistance element, thermal head, printer, and method of manufacturing heating resistance element
JP5322509B2 (en) * 2008-06-18 2013-10-23 東芝ホクト電子株式会社 Thermal print head
JP5311964B2 (en) * 2008-10-29 2013-10-09 京セラ株式会社 Wire saw equipment
JP2012115950A (en) * 2010-12-01 2012-06-21 Komatsu Ntc Ltd Workpiece cutting method
GB2497120A (en) * 2011-12-01 2013-06-05 Rec Wafer Norway As Production of mono-crystalline silicon
CN102945868A (en) * 2012-10-26 2013-02-27 晶澳太阳能有限公司 Orthohexagonal crystal silicon solar wafer and solar battery manufactured thereby
FR3027675B1 (en) * 2014-10-22 2017-11-24 Commissariat Energie Atomique PROCESS FOR CHARACTERIZING THE INTERSTITILE OXYGEN CONCENTRATION IN A SEMICONDUCTOR INGOT

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI702154B (en) * 2019-05-08 2020-08-21 謙華科技股份有限公司 Method for manufacturing thermal print head structure
TWI701160B (en) * 2019-05-14 2020-08-11 謙華科技股份有限公司 Thermal printer head module and method for manufacturing the same
TWI703052B (en) * 2019-08-05 2020-09-01 謙華科技股份有限公司 Thermal print head element, thermal print head element module and manufacturing method of the thermal print head element module
TWI703053B (en) * 2019-08-16 2020-09-01 謙華科技股份有限公司 Thermal print head structure and manufacturing method of the same
TWI716300B (en) * 2020-03-20 2021-01-11 謙華科技股份有限公司 Manufacturing method of thermal print head

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