TW201822597A - Surface Treated Copper Foil, Copper Foil With Carrier, Laminate, Method for Manufacturing Printed Wiring Board, and Method for Manufacturing Electronic Device - Google Patents
Surface Treated Copper Foil, Copper Foil With Carrier, Laminate, Method for Manufacturing Printed Wiring Board, and Method for Manufacturing Electronic Device Download PDFInfo
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- TW201822597A TW201822597A TW106136727A TW106136727A TW201822597A TW 201822597 A TW201822597 A TW 201822597A TW 106136727 A TW106136727 A TW 106136727A TW 106136727 A TW106136727 A TW 106136727A TW 201822597 A TW201822597 A TW 201822597A
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- Prior art keywords
- layer
- copper foil
- treated
- carrier
- resin
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 562
- 239000011889 copper foil Substances 0.000 title claims abstract description 361
- 238000000034 method Methods 0.000 title claims description 102
- 238000004519 manufacturing process Methods 0.000 title claims description 60
- 239000010410 layer Substances 0.000 claims abstract description 734
- 239000011164 primary particle Substances 0.000 claims abstract description 72
- 239000002335 surface treatment layer Substances 0.000 claims abstract description 69
- 239000011163 secondary particle Substances 0.000 claims abstract description 53
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 50
- 229920005989 resin Polymers 0.000 claims description 233
- 239000011347 resin Substances 0.000 claims description 233
- 229910052802 copper Inorganic materials 0.000 claims description 208
- 239000010949 copper Substances 0.000 claims description 208
- 239000000758 substrate Substances 0.000 claims description 117
- 238000011282 treatment Methods 0.000 claims description 55
- 229910052725 zinc Inorganic materials 0.000 claims description 44
- 229910045601 alloy Inorganic materials 0.000 claims description 39
- 239000000956 alloy Substances 0.000 claims description 39
- 229910052750 molybdenum Inorganic materials 0.000 claims description 34
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims description 32
- 238000010438 heat treatment Methods 0.000 claims description 29
- 238000010030 laminating Methods 0.000 claims description 28
- 229910052698 phosphorus Inorganic materials 0.000 claims description 25
- 229910052804 chromium Inorganic materials 0.000 claims description 24
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 22
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 22
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- 229910052785 arsenic Inorganic materials 0.000 claims description 12
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 11
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- 229910018605 Ni—Zn Inorganic materials 0.000 claims description 10
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- UPHOPMSGKZNELG-UHFFFAOYSA-N 2-hydroxynaphthalene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=C(O)C=CC2=C1 UPHOPMSGKZNELG-UHFFFAOYSA-N 0.000 claims description 6
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 6
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 8
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- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 5
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- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
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- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 150000001913 cyanates Chemical class 0.000 description 1
- 238000009990 desizing Methods 0.000 description 1
- UREBDLICKHMUKA-CXSFZGCWSA-N dexamethasone Chemical compound C1CC2=CC(=O)C=C[C@]2(C)[C@]2(F)[C@@H]1[C@@H]1C[C@@H](C)[C@@](C(=O)CO)(O)[C@@]1(C)C[C@@H]2O UREBDLICKHMUKA-CXSFZGCWSA-N 0.000 description 1
- KSFBTBXTZDJOHO-UHFFFAOYSA-N diaminosilicon Chemical compound N[Si]N KSFBTBXTZDJOHO-UHFFFAOYSA-N 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- CMMUKUYEPRGBFB-UHFFFAOYSA-L dichromic acid Chemical compound O[Cr](=O)(=O)O[Cr](O)(=O)=O CMMUKUYEPRGBFB-UHFFFAOYSA-L 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- XCXGMRBXICPEKF-UHFFFAOYSA-L disodium;dodecane;sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O.CCCCCCCCCCCC XCXGMRBXICPEKF-UHFFFAOYSA-L 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- LUCJEPREDVDXKU-UHFFFAOYSA-N ethene silane Chemical compound [SiH4].C=C LUCJEPREDVDXKU-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- SGGOJYZMTYGPCH-UHFFFAOYSA-L manganese(2+);naphthalene-2-carboxylate Chemical compound [Mn+2].C1=CC=CC2=CC(C(=O)[O-])=CC=C21.C1=CC=CC2=CC(C(=O)[O-])=CC=C21 SGGOJYZMTYGPCH-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- JAYXSROKFZAHRQ-UHFFFAOYSA-N n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC=CC=1)CC1CO1 JAYXSROKFZAHRQ-UHFFFAOYSA-N 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- CCDXIADKBDSBJU-UHFFFAOYSA-N phenylmethanetriol Chemical compound OC(O)(O)C1=CC=CC=C1 CCDXIADKBDSBJU-UHFFFAOYSA-N 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000011410 subtraction method Methods 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- 229940038773 trisodium citrate Drugs 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
- C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
- C23C22/24—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 containing hexavalent chromium compounds
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
本發明涉及一種表面處理銅箔、附載體銅箔、積層體、印刷配線板之製造方法及電子機器之製造方法。 The invention relates to a method for manufacturing a surface-treated copper foil, a copper foil with a carrier, a laminate, a printed wiring board, and a method for manufacturing an electronic device.
最近半個世紀以來,印刷配線板取得了長足進步,現在已經用於幾乎所有之電子機器。隨著近年來電子機器的小型化、高性能化需求增大,搭載零件的高密度構裝化及信號的高頻化正不斷發展,對印刷配線板要求良好地應對高頻。 Great progress has been made in printed wiring boards in the last half century, and it is now used in almost all electronic machines. With the increasing demand for miniaturization and high performance of electronic devices in recent years, high-density mounting of components and high-frequency signals have been developed, and printed wiring boards are required to respond well to high frequencies.
為了確保輸出信號的品質,對高頻用基板要求減少傳輸損耗。傳輸損耗主要包括由樹脂(基板側)引起的介電損耗、及由導體(銅箔側)引起的導體損耗。樹脂的介電常數及介電損耗因數越小,那麼介電損耗越減少。在高頻信號中,導體損耗的主要原因在於:頻率越高,那麼電流流通的截面面積會因為電流只在導體的表面流通的集膚效應而越減少,從而使電阻變高。 In order to ensure the quality of the output signal, it is required to reduce the transmission loss of the high-frequency substrate. Transmission loss mainly includes dielectric loss caused by resin (substrate side) and conductor loss caused by conductor (copper foil side). The smaller the dielectric constant and the dielectric loss factor of the resin, the smaller the dielectric loss. In high-frequency signals, the main reason for conductor loss is that the higher the frequency, the smaller the cross-sectional area of the current flowing due to the skin effect of the current flowing only on the surface of the conductor, thereby increasing the resistance.
作為以減少高頻用銅箔的傳輸損耗為目的之技術,例如,在專利文獻1中公開了一種高頻電路用金屬箔,其在金屬箔表面的單面或兩面被覆銀或銀合金屬,並在該銀或銀合金被覆層上施加比上述銀或銀合金 被覆層的厚度薄的銀或銀合金以外的被覆層。而且,記載了由此能夠提供一種金屬箔,即便在像衛星通信所使用的超高頻區域中,也會減少由集膚效應產生的損耗。 As a technique for reducing the transmission loss of high-frequency copper foil, for example, Patent Document 1 discloses a metal foil for high-frequency circuits, which is covered with silver or silver metal on one or both sides of the surface of the metal foil. A coating layer other than silver or a silver alloy, which is thinner than the thickness of the silver or silver alloy coating layer, is applied to the silver or silver alloy coating layer. Furthermore, it is described that it is possible to provide a metal foil which can reduce the loss due to the skin effect even in the ultra-high frequency region used for satellite communication.
另外,在專利文獻2中公開了一種高頻電路用粗化處理壓延銅箔,其特徵在於:壓延銅箔的再結晶退火後的壓延面以X射線繞射所求出的(200)面的積分強度(I(200))相對於微粉末銅以X射線繞射所求出的(200)面的積分強度(I0(200)),I(200)/I0(200)>40,對該壓延面藉由電鍍進行粗化處理後,粗化處理面的算術平均粗糙度(以下設為Ra)為0.02μm~0.2μm,十點平均粗糙度(以下設為Rz)為0.1μm~1.5μm,且該壓延銅箔為印刷電路基板用素材。而且,記載了由此能夠提供一種能在超過1GHz的高頻下使用的印刷電路板。 In addition, Patent Document 2 discloses a roughened rolled copper foil for a high-frequency circuit, which is characterized in that the rolled surface of the rolled copper foil after recrystallization and annealing is obtained by X-ray diffraction. The integrated intensity (I (200)) is relative to the integrated intensity (I0 (200)) of the (200) plane obtained by X-ray diffraction of fine powder copper, and I (200) / I0 (200)> 40. After the rolled surface is roughened by electroplating, the arithmetic average roughness (hereinafter referred to as Ra) of the roughened surface is 0.02 μm to 0.2 μm, and the ten-point average roughness (hereinafter referred to as Rz) is 0.1 μm to 1.5 μm. The rolled copper foil is a material for a printed circuit board. Furthermore, it is described that it is possible to provide a printed circuit board that can be used at a high frequency exceeding 1 GHz.
進而,在專利文獻3中,公開了一種電解銅箔,其特徵在於:銅箔的表面的一部分為由瘤狀突起所構成且表面粗度為2μm~4μm的凹凸面。而且,記載了由此能夠提供一種高頻傳輸特性優異的電解銅箔。 Furthermore, Patent Document 3 discloses an electrolytic copper foil, which is characterized in that a part of the surface of the copper foil is a concave-convex surface composed of nodules and having a surface roughness of 2 μm to 4 μm. Furthermore, it is described that it is possible to provide an electrolytic copper foil excellent in high-frequency transmission characteristics.
[先前技術文獻] [Prior technical literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利第4161304號公報 [Patent Document 1] Japanese Patent No. 4161304
[專利文獻2]日本專利第4704025號公報 [Patent Document 2] Japanese Patent No. 4704025
[專利文獻3]日本特開2004-244656號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2004-244656
雖然如上所述對控制銅箔在用於高頻電路基板時的傳輸損耗進行了各種研究,但仍然留下很多尚未開發之處。另外,在將表面處理銅箔從表面處理層側與樹脂積層,且以指定溫度及指定時間(180℃下10天)加熱後,表面處理銅箔與樹脂的剝離強度(peel strength)必須良好。 Although various studies have been made on controlling the transmission loss of copper foil when used in high-frequency circuit substrates as described above, many areas remain to be developed. In addition, after the surface-treated copper foil is laminated with the resin from the surface-treated layer side and heated at a specified temperature and time (10 days at 180 ° C.), the peel strength of the surface-treated copper foil and the resin must be good.
本發明人等發現:藉由控制在銅箔上形成一次粒子層所獲得的表面處理層、或形成一次粒子層及二次粒子層所獲得的表面處理層中之指定金屬的附著量及表面處理層最表面的十點平均粗糙度Rz,從而即便用於高頻電路基板也能夠很好地減少傳輸損耗,且在與樹脂積層並以指定溫度及指定時間(180℃下10天)加熱後,表面處理銅箔與樹脂的剝離強度(peel strength)良好。 The present inventors have found that the amount and surface treatment of a specified metal in a surface treatment layer obtained by forming a primary particle layer on a copper foil or a surface treatment layer obtained by forming a primary particle layer and a secondary particle layer are controlled. The ten-point average roughness Rz of the outermost layer of the layer can reduce transmission loss well even for high-frequency circuit substrates. After lamination with resin and heating at a specified temperature and time (10 days at 180 ° C), The peel strength of the surface-treated copper foil and the resin is good.
本發明是基於上述見解完成的,在一態樣中,是一種表面處理銅箔,具有銅箔、及在上述銅箔的一面或兩面的表面處理層,上述表面處理層具有一次粒子層,或從上述銅箔側起依次具有一次粒子層及二次粒子層,上述表面處理層含有Zn,上述表面處理層中的Zn的附著量為150μg/dm2以上;上述表面處理層不含Ni,或在上述表面處理層含有Ni的情況下上述表面處理層中的Ni的附著量為800μg/dm2以下;上述表面處理層不含Co,或在上述表面處理層含有Co的情況下上述表面處理層中的Co的附著量為3000μg/dm2以下;且上述表面處理層最表面的十點平均粗糙度Rz為1.5μm以下。 The present invention is based on the above-mentioned findings. In one aspect, it is a surface-treated copper foil having a copper foil and a surface-treated layer on one or both sides of the copper foil, the surface-treated layer having a primary particle layer, or It has a primary particle layer and a secondary particle layer in order from the copper foil side, the surface treatment layer contains Zn, and the amount of Zn in the surface treatment layer is 150 μg / dm 2 or more; the surface treatment layer does not contain Ni, or When the surface treatment layer contains Ni, the adhesion amount of Ni in the surface treatment layer is 800 μg / dm 2 or less; the surface treatment layer does not contain Co, or when the surface treatment layer contains Co, the surface treatment layer The adhesion amount of Co in the alloy is 3000 μg / dm 2 or less; and the ten-point average roughness Rz of the outermost surface of the surface treatment layer is 1.5 μm or less.
本發明在另一態樣中,是一種表面處理銅箔,具有銅箔、及在上述銅箔的一面或兩面的表面處理層,上述表面處理層具有一次粒子 層,或從上述銅箔側起依次具有一次粒子層及二次粒子層;上述表面處理層含有Zn及Mo,上述表面處理層中的Zn及Mo的合計附著量為200μg/dm2以上;上述表面處理層不含Ni,或在上述表面處理層含有Ni的情況下上述表面處理層中的Ni的附著量為800μg/dm2以下;上述表面處理層不含Co,或在上述表面處理層含有Co的情況下上述表面處理層中的Co的附著量為3000μg/dm2以下;且上述表面處理層最表面的十點平均粗糙度Rz為1.5μm以下。 In another aspect, the present invention is a surface-treated copper foil having a copper foil and a surface-treated layer on one or both sides of the copper foil, the surface-treated layer having a primary particle layer or from the copper foil side. It has a primary particle layer and a secondary particle layer in sequence; the surface treatment layer contains Zn and Mo, and the total adhesion amount of Zn and Mo in the surface treatment layer is 200 μg / dm 2 or more; the surface treatment layer does not contain Ni, or When the surface treatment layer contains Ni, the adhesion amount of Ni in the surface treatment layer is 800 μg / dm 2 or less; the surface treatment layer does not contain Co, or when the surface treatment layer contains Co, the surface treatment layer contains Co. The adhesion amount of Co is 3000 μg / dm 2 or less; and the ten-point average roughness Rz of the outermost surface of the surface treatment layer is 1.5 μm or less.
本發明的表面處理銅箔在另一實施方式中,上述表面處理層含有Co。 In another embodiment of the surface-treated copper foil of this invention, the said surface-treatment layer contains Co.
本發明的表面處理銅箔在進而另一實施方式中,上述表面處理層含有Ni。 In still another embodiment of the surface-treated copper foil of the present invention, the surface-treated layer contains Ni.
本發明的表面處理銅箔在進而另一實施方式中,上述表面處理層含有Co及Ni,且上述表面處理層中的Co及Ni的合計附著量為3500μg/dm2以下。 In still another embodiment of the surface-treated copper foil of the present invention, the surface-treated layer contains Co and Ni, and the total adhesion amount of Co and Ni in the surface-treated layer is 3500 μg / dm 2 or less.
本發明的表面處理銅箔在進而另一實施方式中,在準備上述表面處理銅箔及樹脂,並將上述表面處理銅箔從上述表面處理層側與上述樹脂積層後,從上述樹脂剝離上述表面處理銅箔時,剝離強度為0.5kg/cm以上。 In still another embodiment of the surface-treated copper foil of the present invention, the surface-treated copper foil and resin are prepared, and the surface-treated copper foil is laminated with the resin from the surface-treated layer side, and then the surface is peeled from the resin. When processing copper foil, peeling strength is 0.5 kg / cm or more.
本發明的表面處理銅箔在進而另一實施方式中,上述剝離強度為0.7kg/cm以上。 In still another embodiment of the surface-treated copper foil of this invention, the said peeling strength is 0.7 kg / cm or more.
本發明的表面處理銅箔在進而另一實施方式中,上述表面處理層在上述一次粒子層或上述二次粒子層上,從上述銅箔側起依次具有: (A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti所組成的群中一種以上元素所構成的合金層、及(B)鉻酸鹽處理層 In still another embodiment of the surface-treated copper foil of the present invention, the surface-treated layer has, on the primary particle layer or the secondary particle layer, from the copper foil side in order: (A) selected from Ni and selected from Fe Alloy layer consisting of one or more elements in the group consisting of Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, As and Ti, and (B) chromate treatment layer
中的任一層或兩層。 Either or both of them.
本發明的表面處理銅箔在進而另一實施方式中,上述表面處理層在上述一次粒子層或上述二次粒子層上,從上述銅箔側起依次具有:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti所組成的群中一種以上元素所構成的合金層、及(B)鉻酸鹽處理層 In still another embodiment of the surface-treated copper foil of the present invention, the surface-treated layer has, on the primary particle layer or the secondary particle layer, from the copper foil side in this order: (A) selected from Ni and selected from Fe Alloy layer consisting of one or more elements in the group consisting of Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, As and Ti, and (B) chromate treatment layer
中的任一層或兩層、以及矽烷偶合處理層。 Either one or two layers, and a silane coupling treatment layer.
本發明的表面處理銅箔在進而另一實施方式中,上述表面處理層在上述一次粒子層或上述二次粒子層上,從上述銅箔側起依次具有Ni-Zn合金層、及鉻酸鹽處理層中的任一層或兩層。 In still another embodiment of the surface-treated copper foil of the present invention, the surface-treated layer has the Ni-Zn alloy layer and the chromate in this order from the copper foil side on the primary particle layer or the secondary particle layer. Either or both of the processing layers.
本發明的表面處理銅箔在進而另一實施方式中,上述表面處理層在上述一次粒子層或上述二次粒子層上,從上述銅箔側起依次具有Ni-Zn合金層、及鉻酸鹽處理層中的任一層或兩層、以及矽烷偶合處理層。 In still another embodiment of the surface-treated copper foil of the present invention, the surface-treated layer has the Ni-Zn alloy layer and the chromate in this order from the copper foil side on the primary particle layer or the secondary particle layer. Either or both of the treatment layers, and a silane coupling treatment layer.
本發明的表面處理銅箔在進而另一實施方式中,在上述表面處理層的表面具備樹脂層。 In still another embodiment of the surface-treated copper foil of this invention, the surface of the said surface-treated layer is equipped with the resin layer.
本發明的表面處理銅箔在進而另一實施方式中,用於高頻電路基板。 In another embodiment, the surface-treated copper foil of this invention is used for a high frequency circuit board.
本發明在進而另一態樣中,是一種附載體銅箔,在載體的一面或兩面依次具有中間層及極薄銅層,且上述極薄銅層為本發明的表面處 理銅箔。 In yet another aspect, the present invention is a copper foil with a carrier, which has an intermediate layer and an ultra-thin copper layer on one or both sides of the carrier in sequence, and the ultra-thin copper layer is the surface-treated copper foil of the present invention.
本發明在進而另一態樣中,是一種積層體,具有本發明的表面處理銅箔或本發明的附載體銅箔。 In another aspect, this invention is a laminated body which has the surface-treated copper foil of this invention, or the copper foil with a carrier of this invention.
本發明在進而另一態樣中,是一種積層體,含有本發明的附載體銅箔及樹脂,且上述附載體銅箔的端面的一部分或全部被上述樹脂覆蓋。 In still another aspect of the present invention, the present invention is a laminate including the copper foil with a carrier and the resin of the present invention, and a part or all of the end surface of the copper foil with a carrier is covered with the resin.
本發明在進而另一態樣中,是一種積層體,是將一個本發明的附載體銅箔從上述載體側或上述極薄銅層側積層於另一個本發明的附載體銅箔的上述載體側或上述極薄銅層側而成。 In still another aspect, the present invention is a laminated body in which one copper foil with a carrier of the present invention is laminated from the carrier side or the ultra-thin copper layer side to another carrier of the copper foil with a carrier of the present invention. Side or the ultra-thin copper layer side.
本發明在進而另一態樣中,是一種印刷配線板的製造方法,使用本發明的表面處理銅箔或本發明的附載體銅箔。 In another aspect, this invention is a manufacturing method of a printed wiring board using the surface-treated copper foil of this invention, or the copper foil with a carrier of this invention.
本發明在進而另一態樣中,是一種印刷配線板的製造方法,包括如下步驟:準備本發明的表面處理銅箔或本發明的附載體銅箔、及絕緣基板;經過將上述表面處理銅箔與上述絕緣基板積層的步驟形成覆銅積層板、或經過將上述附載體銅箔與上述絕緣基板積層後剝離上述附載體銅箔的載體的步驟形成覆銅積層板;及其後,利用半加成法、減成法、部分加成法或改良半加成法中任一種方法形成電路。 In yet another aspect, the present invention is a method for manufacturing a printed wiring board, including the steps of preparing the surface-treated copper foil of the present invention or the copper foil with a carrier of the present invention, and an insulating substrate; A step of laminating a foil with the insulating substrate to form a copper-clad laminated board, or a step of laminating the copper foil with a carrier and the insulating substrate after laminating the carrier with the copper foil with a carrier to form a copper-clad laminated board; Either the addition method, the subtraction method, the partial addition method, or the modified semi-addition method forms a circuit.
本發明在進而另一態樣中,是一種印刷配線板的製造方法,包括如下步驟:在本發明的表面處理銅箔的上述表面處理層側表面形成電路、或在本 發明的附載體銅箔的上述極薄銅層側表面或上述載體側表面形成電路;以埋沒上述電路的方式,在上述表面處理銅箔的上述表面處理層側表面、或上述附載體銅箔的上述極薄銅層側表面或上述載體側表面形成樹脂層;及藉由在形成上述樹脂層後去除上述表面處理銅箔,或藉由在剝離上述載體或上述極薄銅層後去除上述極薄銅層或上述載體,使埋沒於上述樹脂層中的電路露出。 In still another aspect of the present invention, a method for manufacturing a printed wiring board includes the steps of forming a circuit on the surface of the surface-treated layer side of the surface-treated copper foil of the present invention, or forming the copper foil with a carrier of the present invention. Forming a circuit on the side surface of the ultra-thin copper layer or the side surface of the carrier; to bury the circuit, on the surface-treated layer side surface of the surface-treated copper foil, or on the side of the ultra-thin copper layer of the copper foil with a carrier Forming a resin layer on the surface or the carrier side surface; and by removing the surface-treated copper foil after forming the resin layer, or by removing the ultra-thin copper layer or the carrier after peeling the carrier or the ultra-thin copper layer, The circuit buried in the resin layer is exposed.
本發明在進而另一態樣中,是一種印刷配線板的製造方法,包括如下步驟:將本發明的附載體銅箔的上述載體側表面或上述極薄銅層側表面與樹脂基板積層;在上述附載體銅箔的與樹脂基板積層一側的相反側表面,進行至少一次設置樹脂層與電路這兩層;及在形成上述樹脂層及電路這兩層後,從上述附載體銅箔剝離上述載體或上述極薄銅層。 In yet another aspect, the present invention is a method for manufacturing a printed wiring board, comprising the steps of: laminating the carrier side surface or the ultra-thin copper layer side surface of the copper foil with a carrier of the present invention with a resin substrate; The surface of the copper foil with a carrier on the side opposite to the laminated side of the resin substrate is provided with two layers of a resin layer and a circuit at least once; and after the two layers of the resin layer and the circuit are formed, the above is peeled from the copper foil with a carrier Carrier or very thin copper layer as described above.
本發明在進而另一態樣中,是一種印刷配線板的製造方法,包括如下步驟:在本發明的積層體的任一面或兩面進行至少一次設置樹脂層與電路這兩層;及在形成上述樹脂層及電路這兩層後,從構成上述積層體的附載體銅箔剝離上述載體或上述極薄銅層。 In yet another aspect, the present invention is a method for manufacturing a printed wiring board, comprising the steps of: providing at least one layer of a resin layer and a circuit on either or both sides of the laminated body of the present invention; and After the two layers of the resin layer and the circuit, the carrier or the ultra-thin copper layer is peeled from the copper foil with a carrier constituting the laminated body.
本發明在進而另一態樣中,是一種電子機器的製造方法,使 用印刷配線板,上述印刷配線板為利用本發明的方法製成。 In still another aspect, the present invention is a method for manufacturing an electronic device using a printed wiring board, and the printed wiring board is manufactured by the method of the present invention.
根據本發明,能夠提供一種表面處理銅箔,即便用於高頻電路基板也能夠很好地減少傳輸損耗,且在與樹脂積層並以指定溫度及指定時間(180℃下10天)加熱後,表面處理銅箔與樹脂的剝離強度(peel strength)良好。 According to the present invention, it is possible to provide a surface-treated copper foil that can reduce transmission loss well even when used in a high-frequency circuit board, and after being laminated with a resin and heated at a specified temperature and time (10 days at 180 ° C), The peel strength of the surface-treated copper foil and the resin is good.
圖1A~C是使用本發明的附載體銅箔的印刷配線板製造方法的具體例中,到鍍覆電路、去除阻劑為止的步驟中的配線板剖面示意圖。 FIGS. 1A to 1C are schematic cross-sectional views of a wiring board in a specific example of a method for manufacturing a printed wiring board using a copper foil with a carrier according to the present invention, in steps from plating a circuit to removing a resist.
圖2D~F是使用本發明的附載體銅箔的印刷配線板製造方法的具體例中,從積層樹脂及第二層附載體銅箔到雷射開孔為止的步驟中的配線板剖面示意圖。 2D to F are schematic cross-sectional views of a wiring board in a specific example of a method for manufacturing a printed wiring board using a copper foil with a carrier according to the present invention, in steps from a laminated resin and a second layer of copper foil with a carrier to laser openings.
圖3G~I是使用本發明的附載體銅箔的印刷配線板製造方法的具體例中,從形成通孔填料到剝離第一層載體為止的步驟中的配線板剖面示意圖。 3G to I are schematic cross-sectional views of a wiring board in a specific example of a method for manufacturing a printed wiring board using a copper foil with a carrier according to the present invention, from a step of forming a through-hole filler to a step of peeling a first-layer carrier.
圖4J~K是使用本發明的附載體銅箔的印刷配線板製造方法的具體例中,從快速蝕刻到形成凸塊、銅柱為止的步驟中的配線板剖面示意圖。 4J ~ K are schematic cross-sectional views of a wiring board in a specific example of a method for manufacturing a printed wiring board using the copper foil with a carrier according to the present invention, in steps from rapid etching to formation of bumps and copper pillars.
<表面處理銅箔> <Surface-treated copper foil>
本發明的表面處理銅箔具有銅箔、及且在銅箔的一面或兩面的表面處理層。能夠在將本發明的表面處理銅箔貼合於絕緣基板後,將表面處理銅箔蝕刻為目標導體圖案,最終製造印刷配線板。本發明的表面處理銅箔也 可以用作高頻電路基板用表面處理銅箔。這裡,高頻電路基板是指使用該電路基板的電路所傳輸的信號的頻率為1GHz以上的電路基板。另外,較佳為上述信號的頻率為3GHz以上,更佳為5GHz以上,更佳為8GHz以上,更佳為10GHz以上,更佳為15GHz以上,更佳為18GHz以上,更佳為20GHz以上,更佳為30GHz以上,更佳為38GHz以上,更佳為40GHz以上。 The surface-treated copper foil of the present invention includes a copper foil and a surface-treated layer on one or both sides of the copper foil. After the surface-treated copper foil of the present invention is bonded to an insulating substrate, the surface-treated copper foil can be etched into a target conductor pattern, and a printed wiring board can be finally manufactured. The surface-treated copper foil of the present invention can also be used as a surface-treated copper foil for a high-frequency circuit board. Here, the high-frequency circuit board refers to a circuit board having a frequency of a signal transmitted by a circuit using the circuit board of 1 GHz or higher. In addition, the frequency of the above signal is preferably 3 GHz or more, more preferably 5 GHz or more, more preferably 8 GHz or more, more preferably 10 GHz or more, more preferably 15 GHz or more, more preferably 18 GHz or more, more preferably 20 GHz or more, It is preferably at least 30 GHz, more preferably at least 38 GHz, and even more preferably at least 40 GHz.
<銅箔> <Copper foil>
能夠用於本發明的銅箔的形態沒有特別限定,在本發明中使用的銅箔典型可以是電解銅箔或壓延銅箔的任一種。通常,電解銅箔是使銅從硫酸銅鍍浴電解析出到鈦或不銹鋼的轉筒上製造的,壓延銅箔是反復進行利用壓延輥的塑性加工與熱處理製造的。要求彎曲性的用途中大多使用壓延銅箔。 The form of the copper foil that can be used in the present invention is not particularly limited, and the copper foil used in the present invention may be typically either an electrolytic copper foil or a rolled copper foil. Generally, electrolytic copper foil is produced by electrolyzing copper from a copper sulfate plating bath onto a titanium or stainless steel drum, and rolled copper foil is produced by repeatedly performing plastic processing and heat treatment using a calender roll. In applications where flexibility is required, rolled copper foil is often used.
作為銅箔材料,除了通常用作印刷配線板的導體圖案的精銅(JIS H3100合金編號C1100)或無氧銅(JIS H3100合金編號C1020或JIS H3510合金編號C1011)或磷脫氧銅(JIS H3100合金編號C1201、C1220或C1221)或電解銅等高純度銅以外,例如也可以使用添加Sn的銅、添加Ag的銅、添加Cr、Fe、P、Ti、Sn、Zn、Mn、Mo、Co、Ni、Si、Zr、及/或Mg等的銅合金、添加Ni及Si等的卡遜(corson)系銅合金之類的銅合金。另外,也可以使用具有公知組成的銅箔及銅合金箔。此外,本說明書中,當單獨使用用語“銅箔”時,也包括銅合金箔。 As the copper foil material, in addition to fine copper (JIS H3100 alloy number C1100) or oxygen-free copper (JIS H3100 alloy number C1020 or JIS H3510 alloy number C1011) or phosphorous deoxidized copper (JIS H3100 alloy), which are generally used as conductor patterns of printed wiring boards In addition to high-purity copper such as C1201, C1220, or C1221) or electrolytic copper, for example, Sn-added copper, Ag-added copper, Cr, Fe, P, Ti, Sn, Zn, Mn, Mo, Co, and Ni can be used. , Copper alloys such as Si, Zr, and / or Mg, and copper alloys such as corson-based copper alloys to which Ni and Si are added. In addition, a copper foil and a copper alloy foil having a known composition can also be used. In this specification, when the term "copper foil" is used alone, copper alloy foil is also included.
此外,銅箔的板厚無須特別限定,例如為1~1000μm,或為1~500μm,或為1~300μm,或為3~100μm,或為5~70μm,或為6~35μm, 或為9~18μm。 In addition, the thickness of the copper foil need not be particularly limited, for example, 1 to 1000 μm, or 1 to 500 μm, or 1 to 300 μm, or 3 to 100 μm, or 5 to 70 μm, or 6 to 35 μm, or 9 ~ 18μm.
另外,本發明在另一態樣中,是一種附載體銅箔,在載體的一面或兩面依次具有中間層及極薄銅層,且極薄銅層為本發明的表面處理銅箔。在本發明中,在使用附載體銅箔的情況下,在極薄銅層表面設置以下粗化處理層等表面處理層。此外,將在下文對附載體銅箔的另一實施方式進行敘述。 In addition, in another aspect, the present invention is a copper foil with a carrier. One or both sides of the carrier have an intermediate layer and an ultra-thin copper layer in this order, and the ultra-thin copper layer is the surface-treated copper foil of the present invention. In the present invention, when a copper foil with a carrier is used, a surface treatment layer such as the following roughening treatment layer is provided on the surface of the ultra-thin copper layer. In addition, another embodiment of the copper foil with a carrier will be described below.
<表面處理層> <Surface treatment layer>
表面處理層具有一次粒子層,或從銅箔側起依次具有一次粒子層及二次粒子層。一次粒子層及二次粒子層是由電鍍層形成。該二次粒子的特徵為:其是成長於上述一次粒子上的1個或多個粒子。或二次粒子層為成長於上述一次粒子上的正常鍍層。二次粒子也可以具有樹枝狀的形狀。即,在本說明書中,在使用用語“二次粒子層”的情況下,也包括被覆鍍層等正常鍍覆層。另外,二次粒子層可以具有一層以上由粗化粒子形成的層,可以具有一層以上正常鍍覆層,也可以分別具有一層以上由粗化粒子形成的層與正常鍍覆層。此外,表面處理層也可以具有一次粒子層或二次粒子層以外的一層或多層之其它層。 The surface treatment layer has a primary particle layer, or a primary particle layer and a secondary particle layer in this order from the copper foil side. The primary particle layer and the secondary particle layer are formed of a plating layer. The secondary particle is characterized in that it is one or a plurality of particles growing on the primary particle. Or the secondary particle layer is a normal plating layer grown on the primary particles. The secondary particles may have a dendritic shape. That is, in this specification, when the term "secondary particle layer" is used, a normal plating layer such as a coating plating layer is also included. In addition, the secondary particle layer may have one or more layers made of roughened particles, one or more normal plating layers, or one or more layers made of roughened particles and normal plating layers, respectively. The surface treatment layer may have one or more layers other than the primary particle layer or the secondary particle layer.
此外,一次粒子層為含有如下所述之粗化粒子的層:直接形成在銅箔上的粗化粒子;及重疊在該粗化粒子上的粗化粒子,組成與直接形成在銅箔上的粗化粒子相同,或具有與直接形成在銅箔上的粗化粒子所含有的元素相同的元素。二次粒子層為含有如下所述之粗化粒子的層:形成在一次粒子層所含的粗化粒子上的粗化粒子,組成與形成一次粒子層的粗化粒子不同,或含有形成一次粒子層的粗化粒子所不含的元素。 In addition, the primary particle layer is a layer containing roughened particles as described below: roughened particles directly formed on a copper foil; and roughened particles superimposed on the roughened particles, which are composed and formed directly on the copper foil. The roughened particles are the same or have the same elements as the roughened particles formed directly on the copper foil. The secondary particle layer is a layer containing roughened particles that are formed on the roughened particles included in the primary particle layer and have a composition different from that of the roughened particles that form the primary particle layer, or contain primary particles that form the primary particles. Element not contained in the coarsened particles of the layer.
另外,在無法測定構成上述一次粒子及/或二次粒子的元素的有無、及/或該元素的濃度或附著量的情況下,關於一次粒子及二次粒子,例如在藉由掃描式電子顯微鏡照片來進行觀察時,可以將看上去重疊且存在於銅箔側(下方)的粒子、及不重疊的粒子設為一次粒子,將看上去重疊且存在於其它粒子上的粒子判定為二次粒子。 When it is not possible to measure the presence or absence of an element constituting the primary particle and / or the secondary particle, and / or the concentration or adhesion amount of the element, the primary particle and the secondary particle are, for example, a scanning electron microscope. When observing a photograph, particles that appear to overlap and exist on the copper foil side (below) and non-overlapping particles can be regarded as primary particles, and particles that appear to overlap and exist on other particles can be determined as secondary particles. .
本發明的表面處理銅箔在一態樣中,表面處理層含有Zn,且表面處理層中Zn的附著量為150μg/dm2以上。如果Zn的附著量小於150μg/dm2,那麼擔心在用作高頻電路基板用表面處理銅箔時耐熱性不良。該Zn的附著量較佳為155μg/dm2以上,較佳為165μg/dm2以上,較佳為180μg/dm2以上,較佳為200μg/dm2以上,較佳為250μg/dm2以上,較佳為270μg/dm2以上,較佳為280μg/dm2以上,進而更佳為290μg/dm2以上。該Zn的附著量的上限無須特別設置,典型例如為50000μg/dm2以下,例如為30000μg/dm2以下,例如為10000μg/dm2以下,例如為5000μg/dm2以下,例如為3000μg/dm2以下,例如為2000μg/dm2以下,例如為1000μg/dm2以下。 In one aspect of the surface-treated copper foil of the present invention, the surface-treated layer contains Zn, and the adhesion amount of Zn in the surface-treated layer is 150 μg / dm 2 or more. If the adhesion amount of Zn is less than 150 μg / dm 2 , there is a concern that heat resistance is poor when used as a surface-treated copper foil for a high-frequency circuit substrate. The deposition amount of Zn is preferably 155μg / dm 2 or more, preferably 165μg / dm 2 or more, preferably 180μg / dm 2 or more, preferably 200μg / dm 2 or more, preferably 250μg / dm 2 or more, preferably 270μg / dm 2 or more, preferably 280μg / dm 2 or more, and further more preferably 290μg / dm 2 or more. The upper limit of adhesion amount of Zn is no special setting, typically for example, 50000μg / 2 or less dm, for example, 30000μg / 2 or less dm, for example, 10000μg / 2 or less dm, for example 5000μg / dm 2 or less, for example 3000μg / dm 2 Hereinafter, it is, for example, 2000 μg / dm 2 or less, and for example, 1000 μg / dm 2 or less.
此外,在本發明中,雖然規定了表面處理層中的Zn、Ni、Co、Mo等元素的附著量,但這些是在表面處理層存在於銅箔的兩面的情況下對於一面的表面處理層的規定,並非形成在兩面的表面處理層所含有的元素(例如Zn等)的合計值。 In addition, in the present invention, although the adhesion amount of elements such as Zn, Ni, Co, and Mo in the surface treatment layer is specified, these are surface treatment layers for one surface when the surface treatment layer is present on both sides of the copper foil. The stipulation of 并非 is not the total value of the elements (such as Zn) contained in the surface-treated layer formed on both sides.
本發明的表面處理銅箔在另一態樣中,表面處理層含有Zn及Mo,且表面處理層中Zn及Mo的合計附著量為200μg/dm2以上。如果Zn及Mo的合計附著量小於200μg/dm2,那麼擔心在用作高頻電路基板用 表面處理銅箔時耐熱性不良。該Zn及Mo的合計附著量較佳為250μg/dm2以上,更佳為300μg/dm2以上,更佳為340μg/dm2以上,更佳為360μg/dm2以上,更佳為400μg/dm2以上,更佳為420μg/dm2以上,更佳為450μg/dm2以上,更佳為460μg/dm2以上,更佳為500μg/dm2以上。該Zn及Mo的合計附著量的上限無須特別設置,典型例如為100000μg/dm2以下,例如為50000μg/dm2以下,例如為30000μg/dm2以下,例如為10000μg/dm2以下,例如為8000μg/dm2以下,例如為5000μg/dm2以下,例如為3000μg/dm2以下,例如為1000μg/dm2以下。 In another aspect of the surface-treated copper foil of the present invention, the surface-treated layer contains Zn and Mo, and the total adhesion amount of Zn and Mo in the surface-treated layer is 200 μg / dm 2 or more. If the total adhesion amount of Zn and Mo is less than 200 μg / dm 2 , there is a concern that the heat resistance is poor when used as a surface-treated copper foil for a high-frequency circuit substrate. The total deposition amount of Zn and Mo is preferably from 250μg / dm 2 or more, more preferably 300μg / dm 2 or more, more preferably 340μg / dm 2 or more, more preferably 360μg / dm 2 or more, more preferably 400μg / dm 2 or more, more preferably 420 μg / dm 2 or more, more preferably 450 μg / dm 2 or more, more preferably 460 μg / dm 2 or more, and even more preferably 500 μg / dm 2 or more. The Zn and Mo, the total upper limit of adhesion amount is no special setting, typically for example 100000μg / 2 or less dm, for example, 50000μg / 2 or less dm, for example, 30000μg / 2 or less dm, for example, 10000μg / 2 or less dm, for example, 8000μg A / dm 2, for example 5000μg / 2 or less dm, for example 3000μg / 2 or less dm, e.g. 2 or less of 1000μg / dm.
本發明的表面處理銅箔的表面處理層不含Co,或在表面處理層含有Co的情況下表面處理層中Co的附著量為3000μg/dm2以下。如果該Co的附著量超過3000μg/dm2,那麼擔心會產生高頻傳輸特性變差的問題。該Co的附著量更佳為2900μg/dm2以下,更佳為2800μg/dm2以下,更佳為2790μg/dm2以下,更佳為2700μg/dm2以下,更佳為2500μg/dm2以下,進而更佳為1500μg/dm2以下,進而更佳為1000μg/dm2以下。此外,在表面處理層含有Co的情況下,表面處理層中Co的附著量的下限無須特別限定,Co的附著量典型例如大於0μg/dm2,例如為0.10μg/dm2以上,例如為1μg/dm2以上,例如為2μg/dm2以上,例如為3μg/dm2以上,例如為4μg/dm2以上,例如為5μg/dm2以上,例如為10μg/dm2以上,例如為15μg/dm2以上,例如為20μg/dm2以上。此外,在表面處理層含有Co的情況下,有時與不含Co的情況相比產生使表面處理銅箔的耐候性提升的效果。 The surface-treated layer of the surface-treated copper foil of the present invention does not contain Co, or when the surface-treated layer contains Co, the adhesion amount of Co in the surface-treated layer is 3000 μg / dm 2 or less. If the adhesion amount of Co exceeds 3000 μg / dm 2 , there is a concern that a problem of deterioration in high-frequency transmission characteristics may occur. The deposition amount of Co is more preferably 2900μg / dm 2 or less, more preferably 2800μg / dm 2 or less, more preferably 2790μg / dm 2 or less, more preferably 2700μg / dm 2 or less, more preferably 2500μg / dm 2 or less, Further more preferably 1500μg / dm 2 or less, and further more preferably 1000μg / dm 2 or less. In addition, when the surface treatment layer contains Co, the lower limit of the adhesion amount of Co in the surface treatment layer does not need to be particularly limited, and the adhesion amount of Co is typically, for example, greater than 0 μg / dm 2 , for example, 0.10 μg / dm 2 or more, for example, 1 μg. A / dm 2, for example, [mu] g A / dm 2, for example 3 ug A / dm 2, for example, 4 ug A / dm 2, for example 5 ug A / dm 2, for example, 10 g A / dm 2, for example, 15μg / dm 2 or more, for example, 20 μg / dm 2 or more. In addition, when the surface-treated layer contains Co, the effect of improving the weather resistance of the surface-treated copper foil may be produced compared with the case where Co is not contained.
本發明的表面處理銅箔的表面處理層不含Ni,或在表面處理層含有Ni的情況下表面處理層中Ni的附著量為800μg/dm2以下。如果 該Ni的附著量超過800μg/dm2,那麼擔心會產生高頻傳輸特性變差的問題。該Ni的附著量更佳為750μg/dm2以下,進而更佳為600μg/dm2以下,進而更佳為400μg/dm2以下,進而更佳為250μm/dm2以下。此外,在表面處理層含有Ni的情況下,表面處理層中Ni的附著量的下限無須特別限定,Ni的附著量典型例如大於0μg/dm2,例如為0.10μg/dm2以上,例如為1μg/dm2以上,例如為2μg/dm2以上,例如為3μg/dm2以上,例如為4μg/dm2以上,例如為5μg/dm2以上,例如為10μg/dm2以上,例如為15μg/dm2以上,例如為20μg/dm2以上。此外,在表面處理層含有Ni的情況下,有時與不含Ni的情況相比產生使表面處理銅箔的耐化學品性提升的效果。 The surface-treated layer of the surface-treated copper foil of the present invention does not contain Ni, or when the surface-treated layer contains Ni, the adhesion amount of Ni in the surface-treated layer is 800 μg / dm 2 or less. If the adhesion amount of Ni exceeds 800 μg / dm 2 , there is a concern that a problem of deterioration in high-frequency transmission characteristics may occur. The amount of deposition of Ni is more preferably 750μg / dm 2 or less, and further more preferably 600μg / dm 2 or less, and further more preferably 400μg / dm 2 or less, and more preferably 2 or less 250μm / dm. In addition, when the surface treatment layer contains Ni, the lower limit of the adhesion amount of Ni in the surface treatment layer does not need to be particularly limited. The adhesion amount of Ni is typically, for example, greater than 0 μg / dm 2 , for example, 0.10 μg / dm 2 or more, for example, 1 μg. A / dm 2, for example, [mu] g A / dm 2, for example 3 ug A / dm 2, for example, 4 ug A / dm 2, for example 5 ug A / dm 2, for example, 10 g A / dm 2, for example, 15μg / dm 2 or more, for example, 20 μg / dm 2 or more. In addition, when the surface-treated layer contains Ni, the effect of improving the chemical resistance of the surface-treated copper foil may be produced compared with the case where Ni is not contained.
本發明的表面處理銅箔的表面處理層進而含有Co及Ni,表面處理層中Co及Ni的合計附著量較佳為3500μg/dm2以下。如果該Co及Ni的合計附著量超過3500μg/dm2,那麼擔心會產生高頻傳輸特性變差的問題。該Co及Ni的合計附著量更佳為3100μg/dm2以下,進而更佳為1900μg/dm2以下,進而更佳為1400μg/dm2以下。此外,在表面處理層含有Co及Ni的情況下,表面處理層中Co及Ni的合計附著量的下限無須特別限定,Co及Ni的合計附著量典型例如大於0μg/dm2,例如為0.10μg/dm2以上,例如為1μg/dm2以上,例如為2μg/dm2以上,例如為3μg/dm2以上,例如為4μg/dm2以上,例如為5μg/dm2以上,例如為10μg/dm2以上,例如為15μg/dm2以上,例如為20μg/dm2以上,例如為30μg/dm2以上,例如為40μg/dm2以上,例如為50μg/dm2以上,例如為60μg/dm2以上,例如為70μg/dm2以上。此外,在表面處理層含有Co及Ni的情況下,有時與不含Co及Ni的情況相比產生使表面處理銅箔的耐化學品性及耐候性提升的效果。 The surface-treated layer of the surface-treated copper foil of the present invention further contains Co and Ni, and the total adhesion amount of Co and Ni in the surface-treated layer is preferably 3500 μg / dm 2 or less. If the total adhesion amount of Co and Ni exceeds 3500 μg / dm 2 , there is a concern that a problem of deterioration in high-frequency transmission characteristics may occur. The total adhesion amount of Co and Ni is more preferably 3100 μg / dm 2 or less, even more preferably 1900 μg / dm 2 or less, and even more preferably 1400 μg / dm 2 or less. In addition, when the surface treatment layer contains Co and Ni, the lower limit of the total adhesion amount of Co and Ni in the surface treatment layer need not be particularly limited, and the total adhesion amount of Co and Ni is typically, for example, greater than 0 μg / dm 2 , for example, 0.10 μg A / dm 2, for example, [mu] g A / dm 2, for example, [mu] g A / dm 2, for example 3 ug A / dm 2, for example, 4 ug A / dm 2, for example 5 ug A / dm 2, for example, 10μg / dm 2 or more, for example, 15 μg / dm 2 or more, for example, 20 μg / dm 2 or more, for example, 30 μg / dm 2 or more, for example, 40 μg / dm 2 or more, for example, 50 μg / dm 2 or more, for example, 60 μg / dm 2 or more It is, for example, 70 μg / dm 2 or more. In addition, when the surface treatment layer contains Co and Ni, the effect of improving the chemical resistance and weather resistance of the surface-treated copper foil may be produced compared with the case where Co and Ni are not included.
此外,藉由提高形成表面處理層時所使用的表面處理液中的該元素的濃度,及/或在表面處理為鍍覆的情況下提高電流密度,及/或延長表面處理時間(進行鍍覆時的通電時間)等,能夠增多表面處理層所含有的元素的附著量。另外,藉由降低形成表面處理層時所使用的表面處理液中的該元素的濃度,及/或在表面處理為鍍覆的情況下降低電流密度,及/或縮短表面處理時間(進行鍍覆時的通電時間)等,能夠減少表面處理層所含有的元素的附著量。 In addition, by increasing the concentration of the element in the surface treatment liquid used when forming the surface treatment layer, and / or increasing the current density when the surface treatment is plating, and / or extending the surface treatment time (plating Time, etc.), the amount of adhesion of the elements contained in the surface treatment layer can be increased. In addition, by reducing the concentration of the element in the surface treatment liquid used when forming the surface treatment layer, and / or reducing the current density when the surface treatment is plating, and / or shortening the surface treatment time (plating is performed) Time, etc.), it is possible to reduce the amount of adhesion of elements contained in the surface treatment layer.
本發明的表面處理銅箔的表面處理層最表面的十點平均粗糙度Rz為1.5μm以下。如果表面處理層最表面的十點平均粗糙度Rz超過1.5μm,那麼擔心會產生高頻傳輸特性變差的問題。表面處理層最表面的十點平均粗糙度Rz更佳為1.3μm以下,進而更佳為1.1μm以下,進而更佳為1.0μm以下,進而更佳為0.9μm以下。在由利用表面處理所形成的多個層來形成表面處理層的情況下,“表面處理層最表面”是指該多個層的最外側(最表面)的層的表面。而且,對該多個層的最外側(最表面)的層的表面測定十點平均粗糙度Rz。表面處理層最表面的十點平均粗糙度Rz的下限無須特別限定,典型例如為0.01μm以上,例如為0.05μm以上,例如為0.1μm以上。 The ten-point average roughness Rz of the outermost surface of the surface-treated layer of the surface-treated copper foil of the present invention is 1.5 μm or less. If the ten-point average roughness Rz of the outermost surface of the surface treatment layer exceeds 1.5 μm, there is a concern that a problem of deterioration in high-frequency transmission characteristics may occur. The ten-point average roughness Rz of the outermost surface of the surface treatment layer is more preferably 1.3 μm or less, still more preferably 1.1 μm or less, even more preferably 1.0 μm or less, and still more preferably 0.9 μm or less. When a surface treatment layer is formed by a plurality of layers formed by surface treatment, the "surface treatment layer outermost surface" refers to the surface of the outermost (most surface) layer of the plurality of layers. The ten-point average roughness Rz was measured on the surface of the outermost (topmost) layer of the plurality of layers. The lower limit of the ten-point average roughness Rz of the outermost surface of the surface treatment layer is not particularly limited, and is typically, for example, 0.01 μm or more, for example, 0.05 μm or more, for example, 0.1 μm or more.
本發明的表面處理銅箔的表面處理層也可以在一次粒子層或二次粒子層上,從上述銅箔側起依次具有:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti所組成的群中一種以上元素所構成的合金層、及(B)鉻酸鹽處理層 The surface-treated layer of the surface-treated copper foil of the present invention may be provided on the primary particle layer or the secondary particle layer in order from the copper foil side: (A) from Ni and selected from the group consisting of Fe, Cr, Mo, Zn, Ta Alloy layer composed of one or more elements in the group consisting of Cu, Al, P, W, Mn, Sn, As, and Ti, and (B) a chromate-treated layer
中的任一層或兩層。 Either or both of them.
另外,本發明的表面處理銅箔的表面處理層也可以在一次粒子層或二次粒子層上,從銅箔側起依次具有:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti所組成的群中一種以上元素所構成的合金層、及(B)鉻酸鹽處理層 In addition, the surface-treated layer of the surface-treated copper foil of the present invention may have, on the primary particle layer or the secondary particle layer, from the copper foil side in order: (A) from Ni and selected from Fe, Cr, Mo, Zn, An alloy layer composed of one or more elements in a group consisting of Ta, Cu, Al, P, W, Mn, Sn, As, and Ti, and (B) a chromate-treated layer
中的任一層或兩層、以及矽烷偶合處理層。 Either one or two layers, and a silane coupling treatment layer.
另外,本發明的表面處理銅箔的表面處理層也可以在一次粒子層或二次粒子層上,從銅箔側起依次具有Ni-Zn合金層及鉻酸鹽處理層中的任一層或兩層。 In addition, the surface-treated layer of the surface-treated copper foil of the present invention may have any one or both of a Ni-Zn alloy layer and a chromate-treated layer in order from the copper foil side on the primary particle layer or the secondary particle layer. Floor.
另外,本發明的表面處理銅箔的表面處理層也可以在一次粒子層或二次粒子層上,從銅箔側起依次具有Ni-Zn合金層及鉻酸鹽處理層中的任一層或兩層、以及矽烷偶合處理層。 In addition, the surface-treated layer of the surface-treated copper foil of the present invention may have any one or both of a Ni-Zn alloy layer and a chromate-treated layer in order from the copper foil side on the primary particle layer or the secondary particle layer. Layer, and a silane coupling treatment layer.
此外,上述Ni-Zn合金層是指含有Ni與Zn的合金層。Ni-Zn合金層可以是Ni與Zn的合計濃度為80原子%以上的層。Ni與Zn的合計濃度可以藉由使用XPS等進行深度方向的Ni與Zn的原子濃度分析,對所得的Ni原子濃度與Zn原子濃度進行合計來測定。Ni-Zn合金層也可以是僅由Ni與Zn所構成的層。 The Ni-Zn alloy layer is an alloy layer containing Ni and Zn. The Ni-Zn alloy layer may be a layer in which the total concentration of Ni and Zn is 80 atomic% or more. The total concentration of Ni and Zn can be measured by performing atomic concentration analysis of Ni and Zn in the depth direction using XPS or the like, and totalizing the obtained Ni atom concentration and Zn atom concentration. The Ni-Zn alloy layer may be a layer composed of only Ni and Zn.
本發明的表面處理銅箔在準備該表面處理銅箔與樹脂,將表面處理銅箔從表面處理層側與該樹脂積層,並對該表面處理銅箔進行蝕刻而製作10mm寬的電路後,從該樹脂向90°方向剝離該電路時,剝離強度能夠達成0.5kg/cm以上,剝離強度能夠進而達成0.7kg/cm以上。 In the surface-treated copper foil of the present invention, the surface-treated copper foil and the resin are prepared, the surface-treated copper foil is laminated with the resin from the surface-treated layer side, and the surface-treated copper foil is etched to produce a 10 mm wide circuit. When the resin peels the circuit in the 90 ° direction, the peel strength can reach 0.5 kg / cm or more, and the peel strength can further reach 0.7 kg / cm or more.
另外,本發明的表面處理銅箔在準備該表面處理銅箔與樹脂,將表面處理銅箔從表面處理層側與該樹脂積層,對該表面處理銅箔進行蝕刻而製作10mm寬的電路,並在大氣下以180℃對該電路加熱10天後,從該樹脂向90°方向剝離該電路時,剝離強度能夠達成0.4kg/cm以上,剝離強度能夠進而達成0.5kg/cm以上。 In addition, in the surface-treated copper foil of the present invention, the surface-treated copper foil and the resin are prepared, the surface-treated copper foil is laminated with the resin from the surface-treated layer side, and the surface-treated copper foil is etched to produce a 10 mm wide circuit, and After the circuit was heated at 180 ° C. for 10 days in the atmosphere, when the circuit was peeled from the resin in a 90 ° direction, the peel strength could reach 0.4 kg / cm or more, and the peel strength could further reach 0.5 kg / cm or more.
此外,上述樹脂及上述積層的條件為以下(1)~(3)的任一項、兩項或三項。即,較佳為基於以下(1)~(3)的條件的任一項所獲得的剝離強度為上述範圍內。 The conditions for the resin and the laminate are any one, two, or three of the following (1) to (3). That is, it is preferable that the peeling strength obtained based on any one of the conditions (1) to (3) be within the above range.
(1)樹脂:羥基苯甲酸與羥基萘甲酸的共聚物即液晶聚合物樹脂,厚度50μm (1) Resin: a copolymer of hydroxybenzoic acid and hydroxynaphthoic acid, that is, a liquid crystal polymer resin, with a thickness of 50 μm
積層的條件:壓力3.5MPa,加熱溫度300℃,加熱時間10分鐘 Conditions of lamination: pressure 3.5MPa, heating temperature 300 ℃, heating time 10 minutes
(2)樹脂:低介電聚醯亞胺樹脂,厚度50μm (2) Resin: low-dielectric polyfluorene imide resin, thickness 50 μm
積層的條件:壓力4MPa,加熱溫度300℃,加熱時間10分鐘 Layering conditions: pressure 4MPa, heating temperature 300 ℃, heating time 10 minutes
(3)樹脂:聚四氟乙烯,厚度50μm (3) Resin: polytetrafluoroethylene, thickness 50μm
<傳輸損耗> <Transmission loss>
在傳輸損耗小的情況下,以高頻進行信號傳輸時,信號的衰減得以抑制,所以在以高頻進行信號傳輸的電路中,能夠進行穩定的信號傳輸。因此,傳輸損耗值小則適合用於以高頻進行信號傳輸的電路用途,所以較佳。將表面處理銅箔與市售的液晶聚合物樹脂(Kuraray股份有限公司製造的Vecstar CTZ-厚度50μm,羥基苯甲酸(酯)與羥基萘甲酸(酯)的共聚物的樹脂)貼合後,藉由蝕刻以特性阻抗成為50Ω的方式形成微帶電路,使用HP公司製造的網路分析儀HP8720C測定透過係數,求出頻率20GHz 及頻率40GHz下的傳輸損耗,此時頻率20GHz下的傳輸損耗較佳為小於5.0dB/10cm,更佳為小於4.1dB/10cm,進而更佳為小於3.7dB/10cm。 When the transmission loss is small, the signal attenuation is suppressed when the signal is transmitted at a high frequency. Therefore, in a circuit where the signal is transmitted at a high frequency, stable signal transmission can be performed. Therefore, a small transmission loss value is suitable for a circuit application in which a signal is transmitted at a high frequency, so it is preferable. The surface-treated copper foil was bonded to a commercially available liquid crystal polymer resin (Vecstar CTZ manufactured by Kuraray Co., Ltd.-a resin having a thickness of 50 μm and a copolymer of hydroxybenzoic acid (ester) and hydroxynaphthoic acid (ester)). The microstrip circuit is formed by etching so that the characteristic impedance becomes 50Ω. The transmission coefficient is measured using a network analyzer HP8720C manufactured by HP, and the transmission loss at a frequency of 20GHz and 40GHz is obtained. At this time, the transmission loss at a frequency of 20GHz is better. It is less than 5.0dB / 10cm, more preferably less than 4.1dB / 10cm, and even more preferably less than 3.7dB / 10cm.
<附載體銅箔> <Copper foil with carrier>
本發明的另一實施方式的附載體銅箔在載體的一面或兩面依次具有中間層及極薄銅層。而且,上述極薄銅層是上述本發明的一個實施方式的表面處理銅箔。 A copper foil with a carrier according to another embodiment of the present invention has an intermediate layer and an ultra-thin copper layer on one or both sides of the carrier in this order. The ultra-thin copper layer is the surface-treated copper foil according to the embodiment of the present invention.
<載體> <Carrier>
能夠用於本發明的載體典型為金屬箔或樹脂膜,例如以銅箔、銅合金箔、鎳箔、鎳合金箔、鐵箔、鐵合金箔、不銹鋼箔、鋁箔、鋁合金箔、絕緣樹脂膜、聚醯亞胺膜、LCP(液晶聚合物)膜、氟樹脂膜、聚對苯二甲酸乙二酯(PET)膜、聚丙烯(PP)膜、聚醯胺膜、聚醯胺醯亞胺膜的形態提供。 The carriers that can be used in the present invention are typically metal foils or resin films, such as copper foil, copper alloy foil, nickel foil, nickel alloy foil, iron foil, iron alloy foil, stainless steel foil, aluminum foil, aluminum alloy foil, insulating resin film, Polyimide film, LCP (liquid crystal polymer) film, fluororesin film, polyethylene terephthalate (PET) film, polypropylene (PP) film, polyimide film, polyimide film Provided by the form.
能夠用於本發明的載體典型以壓延銅箔或電解銅箔的形態提供。通常,電解銅箔是使銅從硫酸銅鍍浴電解析出到鈦或不銹鋼的轉筒上製造的,壓延銅箔是反復進行利用壓延輥的塑性加工與熱處理製造的。作為銅箔的材料,除了可以使用精銅(JIS H3100合金編號C1100)或無氧銅(JIS H3100合金編號C1020或JIS H3510合金編號C1011)或磷脫氧銅或電解銅等高純度的銅以外,例如也可以使用添加Sn的銅、添加Ag的銅、添加Cr、Zr或Mg等的銅合金、添加Ni及Si等的卡遜系銅合金之類的銅合金。另外,也可以使用公知的銅合金。此外,在本說明書中,當單獨使用用語“銅箔”時,也包括銅合金箔。 The carrier that can be used in the present invention is typically provided in the form of a rolled copper foil or an electrolytic copper foil. Generally, electrolytic copper foil is produced by electrolyzing copper from a copper sulfate plating bath onto a titanium or stainless steel drum, and rolled copper foil is produced by repeatedly performing plastic processing and heat treatment using a calender roll. As the material of the copper foil, in addition to high-purity copper such as refined copper (JIS H3100 alloy number C1100) or oxygen-free copper (JIS H3100 alloy number C1020 or JIS H3510 alloy number C1011), phosphorus deoxidized copper, or electrolytic copper, for example, Copper alloys such as Sn-added copper, Ag-added copper, copper alloys such as Cr, Zr, or Mg, and Carson-based copper alloys such as Ni and Si may also be used. Alternatively, a known copper alloy may be used. In addition, in this specification, when the term "copper foil" is used alone, a copper alloy foil is also included.
對於能夠用於本發明的載體的厚度也沒有特別限制,只要實 現作為載體的作用並適當調節為合適的厚度即可,例如可設為5μm以上。但是,如果過厚,那麼生產成本會變高,所以一般來說較佳設為35μm以下。因此,載體的厚度典型為8~70μm,更典型為12~70μm,更典型為18~35μm。另外,就減少原料成本的觀點來說,較佳為載體的厚度較小。因此,載體的厚度典型為5μm以上且35μm以下,較佳為5μm以上且18μm以下,較佳為5μm以上且12μm以下,較佳為5μm以上且11μm以下,較佳為5μm以上且10μm以下。此外,在載體的厚度較小的情況下,在載體送箔時容易產生折疊皺褶。為了防止產生折疊皺褶,例如有效的是使附載體銅箔製造裝置的搬送輥平滑或縮短搬送輥與下一搬送輥的距離。此外,在將附載體銅箔用於作為印刷配線板製造方法之一的埋入工法(埋入法(Enbedded Process))的情況下,需要載體的剛性高。因此,在用於埋入工法的情況下,載體的厚度較佳為18μm以上且300μm以下,較佳為25μm以上且150μm以下,較佳為35μm以上且100μm以下,進而更佳為35μm以上且70μm以下。 The thickness of the carrier that can be used in the present invention is not particularly limited as long as it functions as a carrier and is appropriately adjusted to a suitable thickness, for example, it can be 5 m or more. However, if it is too thick, the production cost will increase, so it is generally preferred to be 35 μm or less. Therefore, the thickness of the carrier is typically 8 to 70 μm, more typically 12 to 70 μm, and more typically 18 to 35 μm. From the viewpoint of reducing the cost of raw materials, the thickness of the carrier is preferably small. Therefore, the thickness of the carrier is typically 5 μm or more and 35 μm or less, preferably 5 μm or more and 18 μm or less, preferably 5 μm or more and 12 μm or less, preferably 5 μm or more and 11 μm or less, and preferably 5 μm or more and 10 μm or less. In addition, when the thickness of the carrier is small, folding wrinkles are easily generated when the carrier sends the foil. In order to prevent the occurrence of folding wrinkles, for example, it is effective to smooth the conveyance roller of the copper foil manufacturing apparatus with a carrier or shorten the distance between the conveyance roller and the next conveyance roller. In addition, when the copper foil with a carrier is used for the embedding method (Enbedded Process) which is one of the manufacturing methods of a printed wiring board, the rigidity of a carrier needs to be high. Therefore, in the case of the embedding method, the thickness of the carrier is preferably 18 μm or more and 300 μm or less, preferably 25 μm or more and 150 μm or less, preferably 35 μm or more and 100 μm or less, and further preferably 35 μm or more and 70 μm or less. the following.
此外,也可以在載體的與設置極薄銅層一側的表面為相反側的表面設置一次粒子層及二次粒子層。在載體的與設置極薄銅層一側的表面為相反側的表面設置一次粒子層及二次粒子層具有如下優點:當將載體從具有該一次粒子層及二次粒子層的表面側積層於樹脂基板等支撐體時,載體與樹脂基板不易剝離。 In addition, a primary particle layer and a secondary particle layer may be provided on the surface of the carrier opposite to the surface on the side where the ultra-thin copper layer is provided. Providing the primary particle layer and the secondary particle layer on the surface of the carrier opposite to the surface on which the ultra-thin copper layer is provided has the advantage that when the carrier is laminated from the surface side having the primary particle layer and the secondary particle layer on When a support such as a resin substrate is used, the carrier and the resin substrate are not easily separated.
以下,表示將電解銅箔用作載體的情況下的製造條件的一例。 Hereinafter, an example of the manufacturing conditions when an electrolytic copper foil is used as a carrier is shown.
<電解液組成> <Electrolyte composition>
銅:90~110g/L Copper: 90 ~ 110g / L
硫酸:90~110g/L Sulfuric acid: 90 ~ 110g / L
氯:50~100ppm Chlorine: 50 ~ 100ppm
整平劑1(雙(3-磺丙基)二硫醚):10~30ppm Leveling agent 1 (bis (3-sulfopropyl) disulfide): 10 ~ 30ppm
整平劑2(胺化合物):10~30ppm Leveling agent 2 (amine compound): 10 ~ 30ppm
上述胺化合物可以使用以下化學式的胺化合物。 As the amine compound, an amine compound of the following chemical formula can be used.
此外,用於本發明的電解、表面處理或鍍覆等所使用的處理液的其餘部分只要沒有特別說明均為水。 The rest of the treatment liquid used in the electrolysis, surface treatment, plating, or the like of the present invention is water unless otherwise specified.
<製造條件> <Manufacturing conditions>
電流密度:70~100A/dm2 Current density: 70 ~ 100A / dm 2
電解液溫度:50~60℃ Electrolyte temperature: 50 ~ 60 ℃
電解液線速度:3~5m/sec Linear speed of electrolyte: 3 ~ 5m / sec
電解時間:0.5~10分鐘 Electrolysis time: 0.5 ~ 10 minutes
<中間層> <Middle layer>
在載體上設置中間層。也可以在載體與中間層之間設置其它層。本發明所使用的中間層只要為如下之構成就沒有特別限定,即,為「在附載體銅箔向絕緣基板積層的步驟前極薄銅層不易從載體剝離,另一方面,在向絕緣基板積層的步驟後極薄銅層能夠從載體剝離」之構成。例如,本發明的附載體銅箔的中間層也可以含有選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn、這些的合金、這些的水合物、這些的氧化物、有機物所組成的群中一種或兩種以上。另外,中間層也可以是多層。 An intermediate layer is provided on the carrier. Other layers may be provided between the carrier and the intermediate layer. The intermediate layer used in the present invention is not particularly limited as long as it has a structure that "the extremely thin copper layer is not easily peeled from the carrier before the step of laminating the copper foil with the carrier onto the insulating substrate, and on the other hand, After the step of laminating, the ultra-thin copper layer can be peeled from the carrier. For example, the intermediate layer of the copper foil with a carrier of the present invention may contain a material selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, these alloys, these hydrates, these One or two or more of the group consisting of oxides and organic substances. The intermediate layer may be a plurality of layers.
另外,例如,中間層能夠由如下方式構成:從載體側形成單一金屬層,其由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所構成的元素群中一種元素所構成;或合金層,其由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所構成的元素群中一種或兩種以上的元素所構成;並在其上形成如下層,由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所構成的元素群中一種或兩種以上的元素的水合物或氧化物、或有機物所構成;或單一金屬層,其由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所構成的元素群中一種元素所構成;或合金層,其由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn所構成的元素群中一種或兩種以上的元素所構成。 In addition, for example, the intermediate layer can be formed by forming a single metal layer from the carrier side, which is composed of an element group selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn. Or an alloy layer consisting of one or two or more elements selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn ; And a layer is formed thereon, which is a hydrate of one or two or more elements selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn or Consisting of an oxide or an organic substance; or a single metal layer consisting of one element selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn; or The alloy layer is composed of one or two or more elements selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn.
在將中間層僅設置在單面的情況下,較佳為在載體的相反面設置Ni鍍覆層等防銹層。此外,在利用鉻酸鹽處理、鉻酸鋅處理或鍍覆處理來設置中間層的情況下,認為存在鉻或鋅等附著金屬的一部分成為水合 物或氧化物的情況。 When the intermediate layer is provided only on one side, it is preferable to provide a rust preventive layer such as a Ni plating layer on the opposite side of the carrier. When an intermediate layer is provided by a chromate treatment, a zinc chromate treatment, or a plating treatment, it is considered that a part of the adhered metal such as chromium or zinc may become a hydrate or an oxide.
另外,例如中間層可以在載體上依次積層鎳、鎳-磷合金或鎳-鈷合金與鉻來構成。因為鎳與銅的接著力高於鉻與銅的接著力,所以在剝離極薄銅層時,在極薄銅層與鉻的介面產生剝離。另外,對於中間層的鎳期待防止銅成分從載體向極薄銅層擴散的阻擋效果。中間層中鎳的附著量較佳為100μg/dm2以上且40000μg/dm2以下,更佳為100μg/dm2以上且4000μg/dm2以下,更佳為100μg/dm2以上且2500μg/dm2以下,更佳為100μg/dm2以上且小於1000μg/dm2,中間層中的鉻的附著量較佳為5μg/dm2以上且100μg/dm2以下。 In addition, for example, the intermediate layer may be formed by sequentially stacking nickel, a nickel-phosphorus alloy, a nickel-cobalt alloy, and chromium on a carrier. Because the adhesion between nickel and copper is higher than the adhesion between chromium and copper, peeling occurs at the interface between the ultra-thin copper layer and chromium when the ultra-thin copper layer is peeled. In addition, for the nickel in the intermediate layer, a barrier effect to prevent the diffusion of the copper component from the carrier to the ultra-thin copper layer is expected. The intermediate layer adhering amount of nickel is preferably 100μg / dm 2 or more and 40000μg / dm 2 or less, more preferably 100μg / dm 2 or more and 4000μg / dm 2 or less, more preferably 100μg / dm 2 or more and 2500μg / dm 2 Hereinafter, it is more preferably 100 μg / dm 2 or more and less than 1000 μg / dm 2 , and the adhesion amount of chromium in the intermediate layer is preferably 5 μg / dm 2 or more and 100 μg / dm 2 or less.
<極薄銅層> <Ultra-thin copper layer>
在中間層上設置極薄銅層。也可以在中間層與極薄銅層之間設置其它層。極薄銅層可以藉由利用硫酸銅、焦磷酸銅、氨基磺酸銅、氰化銅等的電解浴進行電鍍來形成,因為硫酸銅浴用於一般的電解銅箔,且能夠以高電流密度形成銅箔,所以較佳。極薄銅層的厚度沒有特別限制,通常比載體薄,例如為12μm以下。典型為0.5~12μm,更典型為1~5μm,進而更典型為1.5~5μm,進而更典型為2~5μm。此外,也可以在載體的兩面設置極薄銅層。 An extremely thin copper layer is provided on the intermediate layer. Other layers may be provided between the intermediate layer and the ultra-thin copper layer. The ultra-thin copper layer can be formed by electroplating with electrolytic baths of copper sulfate, copper pyrophosphate, copper sulfamate, copper cyanide, etc., because copper sulfate bath is used for general electrolytic copper foil and can be formed with high current density Copper foil is preferred. The thickness of the ultra-thin copper layer is not particularly limited, and is generally thinner than the carrier, and is, for example, 12 μm or less. It is typically 0.5 to 12 μm, more typically 1 to 5 μm, even more typically 1.5 to 5 μm, and even more typically 2 to 5 μm. In addition, an extremely thin copper layer may be provided on both sides of the carrier.
<一次粒子層、二次粒子層的形成條件> <Formation Conditions of Primary Particle Layer and Secondary Particle Layer>
在表面處理銅箔的情況下,在銅箔上形成一次粒子層,或依次形成一次粒子層及二次粒子層,另外,在附載體銅箔的情況下,在極薄銅層上形成一次粒子層,或依次形成一次粒子層及二次粒子層。以下表示一次粒子層、二次粒子層的形成條件,但這只表示適當的例子,只要與所使用的樹 脂的密合強度充分,例如初始剝離為0.5kg/cm以上的範圍,那麼下述所示以外的鍍覆條件也無妨。本發明包括這些條件。 In the case of surface-treated copper foil, a primary particle layer is formed on the copper foil, or a primary particle layer and a secondary particle layer are sequentially formed. In the case of a copper foil with a carrier, primary particles are formed on an extremely thin copper layer. Layer, or a primary particle layer and a secondary particle layer are sequentially formed. The formation conditions of the primary particle layer and the secondary particle layer are shown below, but this is only an appropriate example. As long as the adhesive strength with the resin used is sufficient, for example, the initial peeling is in the range of 0.5 kg / cm or more, the following Any plating conditions other than those shown may be used. The invention includes these conditions.
‧一次粒子層 ‧Primary particle layer
在利用一次粒子鍍覆液(I)進行處理後,利用一次粒子鍍覆液(II)進行處理的情況下,可在以下條件下形成一次粒子層。 After the treatment with the primary particle plating solution (I) and the treatment with the primary particle plating solution (II), a primary particle layer can be formed under the following conditions.
(利用一次粒子鍍覆液(I)的處理) (Treatment with primary particle plating solution (I))
<電解液組成> <Electrolyte composition>
銅:5~10g/L Copper: 5 ~ 10g / L
硫酸:70~80g/L Sulfuric acid: 70 ~ 80g / L
<製造條件> <Manufacturing conditions>
電流密度:50~55A/dm2 Current density: 50 ~ 55A / dm 2
電解液溫度:35℃ Electrolyte temperature: 35 ° C
電解時間:0.5~1.6秒 Electrolysis time: 0.5 ~ 1.6 seconds
(利用一次粒子鍍覆液(II)的處理) (Treatment with primary particle plating solution (II))
<電解液組成> <Electrolyte composition>
銅:20~50g/L Copper: 20 ~ 50g / L
硫酸:60~100g/L Sulfuric acid: 60 ~ 100g / L
<製造條件> <Manufacturing conditions>
電流密度:4~10A/dm2 Current density: 4 ~ 10A / dm 2
電解液溫度:35~45℃ Electrolyte temperature: 35 ~ 45 ℃
電解時間:1.4~2.5秒 Electrolysis time: 1.4 ~ 2.5 seconds
在僅藉由利用一次粒子鍍覆液(I)進行處理來形成一次粒 子層的情況下,可以在以下利用一次粒子鍍覆液(I)的處理1、或利用一次粒子鍍覆液(I)的處理2所記載的條件下實施。 In the case where the primary particle layer is formed only by processing with the primary particle plating solution (I), the following treatments using the primary particle plating solution (I) 1 or the primary particle plating solution (I) It is implemented under the conditions described in Process 2.
(利用一次粒子鍍覆液(I)的處理1) (Treatment with primary particle plating solution (I) 1)
<電解液組成> <Electrolyte composition>
銅:10~45g/L Copper: 10 ~ 45g / L
鈷:5~30g/L Cobalt: 5 ~ 30g / L
鎳:5~30g/L Nickel: 5 ~ 30g / L
pH值:2.8~3.2 pH value: 2.8 ~ 3.2
<製造條件> <Manufacturing conditions>
電流密度:30~45A/dm2 Current density: 30 ~ 45A / dm 2
電解液溫度:30~40℃ Electrolyte temperature: 30 ~ 40 ℃
電解時間:0.3~0.8秒 Electrolysis time: 0.3 ~ 0.8 seconds
(利用一次粒子鍍覆液(I)的處理2) (Treatment with primary particle plating solution (I) 2)
<電解液組成> <Electrolyte composition>
銅:5~15g/L Copper: 5 ~ 15g / L
鎳:3~30g/L Nickel: 3 ~ 30g / L
pH值:2.6~3.0 pH value: 2.6 ~ 3.0
<製造條件> <Manufacturing conditions>
電流密度:50~70A/dm2 Current density: 50 ~ 70A / dm 2
電解液溫度:30~40℃ Electrolyte temperature: 30 ~ 40 ℃
電解時間:0.3~0.9秒 Electrolysis time: 0.3 ~ 0.9 seconds
‧二次粒子層 ‧Secondary particle layer
在形成二次粒子層的情況下,可以藉由以下利用二次粒子鍍覆液(I)或二次粒子鍍覆液(II)的處理來實施。 When forming a secondary particle layer, it can implement by the following process using a secondary particle plating liquid (I) or a secondary particle plating liquid (II).
(利用二次粒子鍍覆液(I)的處理) (Treatment with secondary particle plating solution (I))
<電解液組成> <Electrolyte composition>
銅:10~15g/L Copper: 10 ~ 15g / L
鈷:5~15g/L Cobalt: 5 ~ 15g / L
鎳:5~15g/L Nickel: 5 ~ 15g / L
pH值:2.8~3.2 pH value: 2.8 ~ 3.2
<製造條件> <Manufacturing conditions>
電流密度:30~35A/dm2 Current density: 30 ~ 35A / dm 2
電解液溫度:33~37℃ Electrolyte temperature: 33 ~ 37 ℃
電解時間:0.5~1.0秒 Electrolysis time: 0.5 ~ 1.0 seconds
(利用二次粒子鍍覆液(II)的處理) (Treatment with secondary particle plating solution (II))
<電解液組成> <Electrolyte composition>
銅:5~12g/L Copper: 5 ~ 12g / L
鎳:2~11g/L Nickel: 2 ~ 11g / L
pH值:2.8 pH value: 2.8
<製造條件> <Manufacturing conditions>
電流密度:55~65A/dm2 Current density: 55 ~ 65A / dm 2
電解液溫度:35~40℃ Electrolyte temperature: 35 ~ 40 ℃
電解時間:0.3~0.9秒 Electrolysis time: 0.3 ~ 0.9 seconds
<被覆鍍覆> <Coated plating>
在一次粒子層上,或者,在形成二次粒子層的情況下在二次粒子層上進行被覆鍍覆。藉由被覆鍍覆所形成的層例如可列舉:Zn-Cr合金層、Ni-Mo合金層、Zn層、Co-Mo合金層、Co-Ni合金層、Ni-W合金層、Ni-P合金層、Ni-Fe合金層、Ni-Al合金層、Co-Zn合金層、Co-P合金層、Zn-Co合金層、Ni層、Co層、Cr層、Al層、Sn層、Sn-Ni層、Ni-Sn層或Zn-Ni合金層等之類的由選自由Zn、Cr、Ni、Fe、Ta、Cu、Al、P、W、Mn、Sn、As、Ti、Mo及Co等所組成的群中一種元素所構成的金屬層、或含有選自由Zn、Cr、Ni、Fe、Ta、Cu、Al、P、W、Mn、Sn、As、Ti、Mo及Co所組成的群中兩種或三種以上的合金層、或由選自上述元素群中兩種或三種以上元素所構成的合金層。 Coating is performed on the primary particle layer or, when forming the secondary particle layer, on the secondary particle layer. Examples of the layer formed by the coating plating include a Zn-Cr alloy layer, a Ni-Mo alloy layer, a Zn layer, a Co-Mo alloy layer, a Co-Ni alloy layer, a Ni-W alloy layer, and a Ni-P alloy. Layer, Ni-Fe alloy layer, Ni-Al alloy layer, Co-Zn alloy layer, Co-P alloy layer, Zn-Co alloy layer, Ni layer, Co layer, Cr layer, Al layer, Sn layer, Sn-Ni Layers, Ni-Sn layers, Zn-Ni alloy layers, etc. are selected from the group consisting of Zn, Cr, Ni, Fe, Ta, Cu, Al, P, W, Mn, Sn, As, Ti, Mo, and Co. A metal layer composed of one element in the group or a group selected from the group consisting of Zn, Cr, Ni, Fe, Ta, Cu, Al, P, W, Mn, Sn, As, Ti, Mo, and Co Two or three or more alloy layers, or an alloy layer composed of two or more elements selected from the above-mentioned element group.
被覆鍍覆能夠藉由利用以下被覆鍍覆液等進行處理,或藉由組合這些處理來實施。另外,無法藉由濕式鍍覆設置的金屬層、及/或合金層可藉由濺鍍、物理蒸鍍(PVD)、化學蒸鍍(CVD)等乾式鍍覆法來設置。 The coating plating can be performed by using the following coating plating liquids or the like, or by combining these processes. In addition, a metal layer and / or an alloy layer that cannot be provided by wet plating can be provided by a dry plating method such as sputtering, physical vapor deposition (PVD), or chemical vapor deposition (CVD).
‧利用被覆鍍覆液的處理(1)Zn-Cr ‧Treatment with coating solution (1) Zn-Cr
液體組成:重鉻酸鉀1~1g/L、Zn0.1~5g/L Liquid composition: potassium dichromate 1 ~ 1g / L, Zn0.1 ~ 5g / L
液溫:40~60℃ Liquid temperature: 40 ~ 60 ℃
pH值:0.5~10 pH value: 0.5 ~ 10
電流密度:0.01~2.6A/dm2 Current density: 0.01 ~ 2.6A / dm 2
通電時間:0.05~30秒 Power-on time: 0.05 ~ 30 seconds
‧利用被覆鍍覆液的處理(2)Ni-Mo ‧Treatment by coating liquid (2) Ni-Mo
液體組成:硫酸鎳270~280g/L、氯化鎳35~45g/L、乙酸鎳10~20g/L、鉬酸鈉1~60g/L、檸檬酸三鈉10~50g/L、十二烷基硫酸鈉50~90ppm Liquid composition: nickel sulfate 270 ~ 280g / L, nickel chloride 35 ~ 45g / L, nickel acetate 10 ~ 20g / L, sodium molybdate 1 ~ 60g / L, trisodium citrate 10 ~ 50g / L, dodecane Sodium sulfate 50 ~ 90ppm
液溫:20~65℃ Liquid temperature: 20 ~ 65 ℃
pH值:4~12 pH value: 4 ~ 12
電流密度:0.5~5A/dm2 Current density: 0.5 ~ 5A / dm 2
通電時間:0.1~5秒 Power-on time: 0.1 ~ 5 seconds
‧利用被覆鍍覆液的處理(3)Zn ‧Treatment by coating liquid (3) Zn
液體組成:Zn1~15g/L Liquid composition: Zn1 ~ 15g / L
液溫:25~50℃ Liquid temperature: 25 ~ 50 ℃
pH值:2~6 pH value: 2 ~ 6
電流密度:0.5~5A/dm2 Current density: 0.5 ~ 5A / dm 2
通電時間:0.01~0.3秒 Power-on time: 0.01 ~ 0.3 seconds
‧利用被覆鍍覆液的處理(4)Co-Mo ‧Treatment by coating liquid (4) Co-Mo
液體組成:Co1~20g/L、鉬酸鈉1~60g/L、檸檬酸鈉10~110g/L Liquid composition: Co1 ~ 20g / L, sodium molybdate 1 ~ 60g / L, sodium citrate 10 ~ 110g / L
液溫:25~50℃ Liquid temperature: 25 ~ 50 ℃
pH值:5~7 pH value: 5 ~ 7
電流密度:1~4A/dm2 Current density: 1 ~ 4A / dm 2
通電時間:0.1~5秒 Power-on time: 0.1 ~ 5 seconds
‧利用被覆鍍覆液的處理(5)Co-Ni ‧Treatment with coating bath (5) Co-Ni
液體組成:Co1~20g/L、N1~20g/L Liquid composition: Co1 ~ 20g / L, N1 ~ 20g / L
液溫:30~80℃ Liquid temperature: 30 ~ 80 ℃
pH值:1.5~3.5 pH value: 1.5 ~ 3.5
電流密度:1~20A/dm2 Current density: 1 ~ 20A / dm 2
通電時間:0.1~4秒 Power-on time: 0.1 ~ 4 seconds
‧利用被覆鍍覆液的處理(6)Zn-Ni ‧Treatment with coating solution (6) Zn-Ni
液體組成:Zn1~30g/L、N1~30g/L Liquid composition: Zn1 ~ 30g / L, N1 ~ 30g / L
液溫:40~50℃ Liquid temperature: 40 ~ 50 ℃
pH值:2~5 pH value: 2 ~ 5
電流密度:0.5~5A/dm2 Current density: 0.5 ~ 5A / dm 2
通電時間:0.01~0.3秒 Power-on time: 0.01 ~ 0.3 seconds
‧利用被覆鍍覆液的處理(7)Ni-W ‧Treatment by coating liquid (7) Ni-W
液體組成:Ni1~30g/L、W1~300mg/L Liquid composition: Ni1 ~ 30g / L, W1 ~ 300mg / L
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
pH值:2~5 pH value: 2 ~ 5
電流密度:0.1~5A/dm2 Current density: 0.1 ~ 5A / dm 2
通電時間:0.01~0.3秒 Power-on time: 0.01 ~ 0.3 seconds
‧利用被覆鍍覆液的處理(8)Ni-P ‧Treatment with coating plating solution (8) Ni-P
液體組成:Ni1~30g/L、P1~10g/L Liquid composition: Ni1 ~ 30g / L, P1 ~ 10g / L
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
pH值:2~5 pH value: 2 ~ 5
電流密度:0.1~5A/dm2 Current density: 0.1 ~ 5A / dm 2
通電時間:0.01~0.3秒 Power-on time: 0.01 ~ 0.3 seconds
<其它表面處理> <Other surface treatments>
也可以在被覆鍍覆後,進而在其表面實施鉻酸鹽處理、矽烷偶合處理等處理。也就是說,也可以在一次粒子層或二次粒子層的表面形成選自耐熱層、防銹層、鉻酸鹽處理層及矽烷偶合處理層所組成的群中一種以上的 層。此外,上述耐熱層、防銹層、鉻酸鹽處理層、矽烷偶合處理層也可以分別由多個層形成(例如兩層以上、三層以上等)。 After the coating is plated, treatments such as chromate treatment and silane coupling treatment may be performed on the surface. That is, one or more layers selected from the group consisting of a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a silane coupling-treated layer may be formed on the surface of the primary particle layer or the secondary particle layer. In addition, the heat-resistant layer, the rust-proof layer, the chromate-treated layer, and the silane coupling-treated layer may be formed of a plurality of layers (for example, two or more layers, three or more layers, etc.).
在本說明書中,鉻酸鹽處理層是指利用包含鉻酸酐、鉻酸、二鉻酸、鉻酸鹽或二鉻酸鹽的液體處理過的層。鉻酸鹽處理層也可以含有Co、Fe、Ni、Mo、Zn、Ta、Cu、Al、P、W、Sn、As及Ti等元素(可以是金屬、合金、氧化物、氮化物、硫化物等任何形態)。作為鉻酸鹽處理層的具體例,可列舉利用鉻酸酐或二鉻酸鉀水溶液處理過的鉻酸鹽處理層或利用含有鉻酸酐或二鉻酸鉀及鋅的處理液處理過的鉻酸鹽處理層等。 In the present specification, the chromate-treated layer refers to a layer treated with a liquid containing chromic anhydride, chromic acid, dichromic acid, chromate, or dichromate. The chromate-treated layer may also contain elements such as Co, Fe, Ni, Mo, Zn, Ta, Cu, Al, P, W, Sn, As, and Ti (can be metals, alloys, oxides, nitrides, sulfides And so on). Specific examples of the chromate treatment layer include a chromate treatment layer treated with a chromic anhydride or an aqueous potassium dichromate solution or a chromate treated with a treatment solution containing chromic anhydride, potassium dichromate, and zinc. Processing layer, etc.
作為耐熱層、防銹層,可以使用公知的耐熱層、防銹層。例如,耐熱層及/或防銹層可以是含有選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭的群中一種以上的元素的層,也可以是由選自鎳、鋅、錫、鈷、鉬、銅、鎢、磷、砷、鉻、釩、鈦、鋁、金、銀、鉑族元素、鐵、鉭的群中一種以上的元素所構成的金屬層或合金層。另外,耐熱層及/或防銹層也可以具有含有上述元素的氧化物、氮化物、矽化物。另外,耐熱層及/或防銹層也可以是含鎳-鋅合金的層。另外,耐熱層及/或防銹層也可以是鎳-鋅合金層。上述鎳-鋅合金層也可以除不可避免的雜質以外,含有鎳50wt%~99wt%,鋅50wt%~1wt%。上述鎳-鋅合金層的鋅及鎳的合計附著量也可以是5~1000mg/m2,較佳為10~500mg/m2,較佳為20~100mg/m2。另外,上述含有鎳-鋅合金的層或上述鎳-鋅合金層的鎳的附著量與鋅的附著量的比(=鎳的附著量/鋅的附著量)較佳為1.5~10。另外,上述含有鎳-鋅合金的層或上述鎳-鋅合金層的鎳的附著量較佳為0.5mg/m2~500mg/m2,更佳為1mg/m2~50mg/m2。在耐熱 層及/或防銹層為含有鎳-鋅合金的層的情況下,當通孔或導孔等的內壁部與去膠渣液接觸時,銅箔與樹脂基板的介面不易被去膠渣液侵蝕,銅箔與樹脂基板的密合性提升。 As a heat-resistant layer and a rust-proof layer, a well-known heat-resistant layer and a rust-proof layer can be used. For example, the heat-resistant layer and / or the rust-proof layer may be selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron A layer of one or more elements in the group of tantalum may be selected from the group consisting of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, and platinum. A metal layer or an alloy layer composed of one or more elements of the group of elements, iron, and tantalum. The heat-resistant layer and / or the rust-preventive layer may have oxides, nitrides, and silicides containing the above elements. The heat-resistant layer and / or the rust preventive layer may be a layer containing a nickel-zinc alloy. The heat-resistant layer and / or the rust preventive layer may be a nickel-zinc alloy layer. The above nickel-zinc alloy layer may contain, in addition to unavoidable impurities, 50% to 99% by weight of nickel and 50% to 1% by weight of zinc. The total adhesion amount of zinc and nickel in the nickel-zinc alloy layer may be 5 to 1000 mg / m 2 , preferably 10 to 500 mg / m 2 , and preferably 20 to 100 mg / m 2 . The ratio of the amount of nickel deposited to the amount of nickel deposited on the nickel-zinc alloy-containing layer or the nickel-zinc alloy layer (= nickel deposited / zinc deposited) is preferably 1.5 to 10. The nickel-zinc alloy-containing layer or the nickel-zinc alloy layer preferably has an adhesion amount of nickel of 0.5 mg / m 2 to 500 mg / m 2 , and more preferably 1 mg / m 2 to 50 mg / m 2 . In the case where the heat-resistant layer and / or the rust-proof layer is a layer containing a nickel-zinc alloy, the interface between the copper foil and the resin substrate is not easily removed when the inner wall portion of the through hole or the via hole is in contact with the desizing solution. The slag liquid is eroded, and the adhesion between the copper foil and the resin substrate is improved.
例如耐熱層及/或防銹層是依次積層附著量為1mg/m2~100mg/m2、較佳為5mg/m2~50mg/m2的鎳或鎳合金層、與附著量為1mg/m2~80mg/m2、較佳為5mg/m2~40mg/m2的錫層而成,上述鎳合金層也可以由鎳-鉬合金、鎳-鋅合金、鎳-鉬-鈷合金、鎳-錫合金的任一種所構成。 For example, the heat-resistant layer and / or the rust-proof layer are sequentially laminated with a nickel or nickel alloy layer with an adhesion amount of 1 mg / m 2 to 100 mg / m 2 , preferably 5 mg / m 2 to 50 mg / m 2 , and an adhesion amount of 1 mg / m 2 m 2 to 80 mg / m 2 , preferably 5 mg / m 2 to 40 mg / m 2 , the above-mentioned nickel alloy layer may also be made of nickel-molybdenum alloy, nickel-zinc alloy, nickel-molybdenum-cobalt alloy, It is composed of any of nickel-tin alloys.
矽烷偶合處理層既可以使用公知的矽烷偶合劑來形成,也可以使用環氧系矽烷、胺基系矽烷、甲基丙烯醯氧基系矽烷、巰基系矽烷、乙烯系矽烷、咪唑系矽烷、三系矽烷等矽烷偶合劑等來形成。此外,這種矽烷偶合劑也可以混合兩種以上使用。其中,較佳為使用胺基系矽烷偶合劑或環氧系矽烷偶合劑來形成。 The silane coupling treatment layer may be formed using a known silane coupling agent, or epoxy silane, amine silane, methacryloxy silane, mercapto silane, ethylene silane, imidazole silane, trisilane It is formed by a silane coupling agent such as silane. The silane coupling agent may be used in combination of two or more. Among them, it is preferably formed using an amine-based silane coupling agent or an epoxy-based silane coupling agent.
另外,能夠對銅箔、極薄銅層、粗化處理層、耐熱層、防銹層、矽烷偶合處理層或鉻酸鹽處理層的表面進行公知的表面處理。 In addition, the surface of a copper foil, an ultra-thin copper layer, a roughened layer, a heat-resistant layer, a rust-proof layer, a silane coupling-treated layer, or a chromate-treated layer can be subjected to a known surface treatment.
本發明的表面處理層也可以含有利用上述表面處理所形成的層。例如本發明的表面處理層可以含有一層或多層之上述被覆鍍覆層、及/或金屬層、及/或合金層、及/或耐熱層、及/或防銹層、及/或鉻酸鹽處理層、及/或矽烷偶合處理層、及/或粗化處理層。 The surface-treated layer of the present invention may contain a layer formed by the surface treatment. For example, the surface treatment layer of the present invention may contain one or more of the above-mentioned coated plating layers, and / or metal layers, and / or alloy layers, and / or heat-resistant layers, and / or rust-proof layers, and / or chromates. The treatment layer and / or the silane coupling treatment layer and / or the roughening treatment layer.
如上所述製造表面處理銅箔、及/或具備載體、積層在載體上的中間層、及積層在中間層上的極薄銅層的附載體銅箔。表面處理銅箔、及/或附載體銅箔本身的使用方法對業者而言是眾所周知的,例如能夠將表面處理銅箔、及/或極薄銅層的表面貼合於紙基材酚樹脂、紙基材環氧樹脂、 合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂、聚酯膜、聚醯亞胺膜、液晶聚合物、氟樹脂、聚醯胺樹脂、低介電聚醯亞胺膜等絕緣基板,(在附載體銅箔的情況下,於熱壓接後剝離載體)製成覆銅積層板,將接著在絕緣基板的表面處理銅箔、及/或極薄銅層蝕刻為目標導體圖案,最終製造印刷配線板。 As described above, a surface-treated copper foil and / or a copper foil with a carrier including a carrier, an intermediate layer laminated on the carrier, and an ultra-thin copper layer laminated on the intermediate layer are produced. The use of the surface-treated copper foil and / or the copper foil with a carrier itself is well known to the industry. For example, the surface of the surface-treated copper foil and / or the ultra-thin copper layer can be bonded to a paper base phenol resin, Paper substrate epoxy resin, synthetic fiber cloth substrate epoxy resin, glass cloth-paper composite substrate epoxy resin, glass cloth-glass non-woven composite substrate epoxy resin, glass cloth substrate epoxy resin, polyester film , Polyimide film, liquid crystal polymer, fluororesin, polyimide resin, low dielectric polyimide film and other insulating substrates (in the case of copper foil with a carrier, the carrier is peeled off after thermocompression bonding) A copper-clad laminated board is formed, and then a copper foil and / or an ultra-thin copper layer on the surface of the insulating substrate is etched into a target conductor pattern, and a printed wiring board is finally manufactured.
<樹脂層> <Resin layer>
本發明的表面處理銅箔也可以在表面處理層的表面具備樹脂層。另外,也可以在由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti所組成的群中一種以上元素所構成的合金層、鉻酸鹽處理層、矽烷偶合處理層、或Ni-Zn合金層的表面具備樹脂層。樹脂層更佳為形成在表面處理銅箔的最表面。 The surface-treated copper foil of the present invention may include a resin layer on the surface of the surface-treated layer. In addition, an alloy layer composed of Ni and one or more elements selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, As, and Ti, and chromium may also be used. A resin layer is provided on the surface of the acid-treated layer, the silane coupling-treated layer, or the Ni-Zn alloy layer. The resin layer is more preferably formed on the outermost surface of the surface-treated copper foil.
本發明的附載體銅箔也可以在一次粒子層或二次粒子層上、在耐熱層、防銹層、鉻酸鹽處理層、或矽烷偶合處理層上具備樹脂層。 The copper foil with a carrier of the present invention may be provided with a resin layer on the primary particle layer or the secondary particle layer, the heat-resistant layer, the rust-proof layer, the chromate-treated layer, or the silane coupling-treated layer.
上述樹脂層可以是接著劑,也可以是接著用半硬化狀態(B階段)的絕緣樹脂層。半硬化狀態(B階段)包括如下狀態:用手指觸碰其表面也沒有黏著感,能夠將該絕緣樹脂層重疊保管,進而當受到加熱處理時發生硬化反應。 The resin layer may be an adhesive or a semi-hardened (B-stage) insulating resin layer. The semi-hardened state (stage B) includes a state in which the surface of the insulating resin layer is not overlapped when touched with a finger, and the insulating resin layer can be stored in an overlapping manner, and a hardening reaction occurs when subjected to heat treatment.
另外,上述樹脂層既可以含有熱硬化性樹脂,也可以是熱塑性樹脂。另外,上述樹脂層也可以含有熱塑性樹脂。其種類沒有特別限定,作為較佳的樹脂,例如可列舉含有選自環氧樹脂、聚醯亞胺樹脂、多官能性氰酸酯化合物、馬來醯亞胺化合物、聚馬來醯亞胺化合物、馬來醯亞胺 系樹脂、芳香族馬來醯亞胺樹脂、聚乙烯醇縮醛樹脂、胺酯樹脂、聚醚碸(也稱為polyethersulphone)、聚醚碸(polyethersulphone)樹脂、芳香族聚醯胺樹脂、芳香族聚醯胺樹脂聚合物、橡膠性樹脂、聚胺、芳香族聚胺、聚醯胺醯亞胺樹脂、橡膠改質環氧樹脂、苯氧樹脂、羧基改質丙烯腈-丁二烯樹脂、聚苯醚、雙馬來醯亞胺三樹脂、熱硬化性聚苯醚樹脂、氰酸酯系樹脂、羧酸的酐、多元羧酸的酐、具有能夠交聯的官能基的線性聚合物、聚苯醚樹脂、2,2-雙(4-氰酸基苯基)丙烷、含有磷的酚化合物、環烷酸錳、2,2-雙(4-縮水甘油基苯基)丙烷、聚苯醚-氰酸酯系樹脂、矽氧烷改質聚醯胺醯亞胺樹脂、氰基酯樹脂、磷腈系樹脂、橡膠改質聚醯胺醯亞胺樹脂、異戊二烯、氫化型聚丁二烯、聚乙烯醇縮丁醛、苯氧基樹脂、高分子環氧、芳香族聚醯胺、氟樹脂、雙酚、嵌段共聚聚醯亞胺樹脂及氰基酯樹脂的群中一種以上的樹脂。 The resin layer may contain a thermosetting resin or a thermoplastic resin. The resin layer may contain a thermoplastic resin. The type is not particularly limited, and examples of preferred resins include those selected from epoxy resins, polyimide resins, polyfunctional cyanate compounds, maleimide compounds, and polymaleimide compounds. , Maleimide resin, aromatic maleimide resin, polyvinyl acetal resin, amine ester resin, polyether resin (also known as polyethersulphone), polyether resin (polyethersulphone) resin, aromatic polymer Fluorene resin, aromatic polyamine resin polymer, rubber resin, polyamine, aromatic polyamine, polyamidamine resin, rubber modified epoxy resin, phenoxy resin, carboxyl modified acrylonitrile- Butadiene resin, polyphenylene ether, bismaleimide Resin, thermosetting polyphenylene ether resin, cyanate resin, anhydride of carboxylic acid, anhydride of polycarboxylic acid, linear polymer having functional group capable of crosslinking, polyphenylene ether resin, 2,2-bis ( 4-cyanophenyl) propane, phosphorus-containing phenol compounds, manganese naphthenate, 2,2-bis (4-glycidylphenyl) propane, polyphenylene ether-cyanate resin, silicone Modified polyamidoimide resin, cyanoester resin, phosphazene-based resin, rubber modified polyamidoimide resin, isoprene, hydrogenated polybutadiene, polyvinyl butyral, One or more resins in the group of phenoxy resin, polymer epoxy, aromatic polyamido, fluororesin, bisphenol, block copolymer polyamidoimide resin, and cyanoester resin.
另外,上述環氧樹脂只要在分子內具有兩個以上的環氧基,且可用於電氣、電子材料用途,那麼就能夠沒有特別問題地使用。另外,上述環氧樹脂較佳為使用分子內具有兩個以上縮水甘油基的化合物加以環氧化而成的環氧樹脂。另外,能夠混合選自雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、雙酚AD型環氧樹脂、酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、脂環式環氧樹脂、溴化(臭素化)環氧樹脂、苯酚酚醛清漆型環氧樹脂、萘型環氧樹脂、溴化雙酚A型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、橡膠改質雙酚A型環氧樹脂、縮水甘油胺型環氧樹脂、三縮水甘油基異三聚氰酸酯、N,N-二縮水甘油苯胺等縮水甘油胺化合物、四氫鄰苯二甲酸二縮水甘油酯等縮水甘油酯化合物、含有磷的 環氧樹脂、聯苯型環氧樹脂、聯苯酚醛清漆型環氧樹脂、三羥基苯基甲烷型環氧樹脂、四苯基乙烷型環氧樹脂的群中一種或兩種以上使用,或者能夠使用上述環氧樹脂的氫化物或鹵化物。 In addition, as long as the epoxy resin has two or more epoxy groups in the molecule and can be used for electrical and electronic material applications, it can be used without particular problems. The epoxy resin is preferably an epoxy resin obtained by epoxidizing a compound having two or more glycidyl groups in a molecule. In addition, it can be selected from the group consisting of bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AD type epoxy resin, novolac type epoxy resin, and cresol novolac type. Epoxy resin, alicyclic epoxy resin, brominated (stinky) epoxy resin, phenol novolac epoxy resin, naphthalene epoxy resin, brominated bisphenol A epoxy resin, o-cresol novolac Type epoxy resin, rubber modified bisphenol A type epoxy resin, glycidylamine type epoxy resin, triglycidyl isocyanurate, glycidylamine compounds such as N, N-diglycidylaniline, etc. Glycidyl ester compounds such as diglycidyl hydrophthalate, epoxy resin containing phosphorus, biphenyl epoxy resin, biphenol novolac epoxy resin, trihydroxyphenylmethane epoxy resin, tetrabenzene One or two or more of the ethane type epoxy resins are used, or a hydride or halide of the epoxy resin can be used.
作為上述含有磷的環氧樹脂,可以使用公知的含有磷的環氧樹脂。另外,上述含有磷的環氧樹脂例如優選以分子內具備兩個以上環氧基的來自9,10-二氫-9-氧雜-10-磷雜菲-10-氧化物的衍生物的形式獲得的環氧樹脂。 As the phosphorus-containing epoxy resin, a known phosphorus-containing epoxy resin can be used. The above-mentioned phosphorus-containing epoxy resin is preferably in the form of a derivative derived from 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide having two or more epoxy groups in the molecule, for example. Obtained epoxy resin.
上述樹脂層可含有公知的樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體(可以使用含有無機化合物及/或有機化合物的介電體、含有金屬氧化物的介電體等任意介電體)、反應催化劑、交聯劑、聚合物、預浸料、骨架材等。另外,上述樹脂層也可以使用公知的形成方法、形成裝置來形成。 The resin layer may contain any dielectric such as a known resin, a resin hardener, a compound, a hardening accelerator, and a dielectric (a dielectric containing an inorganic compound and / or an organic compound, a dielectric containing a metal oxide, or the like may be used) Body), reaction catalyst, cross-linking agent, polymer, prepreg, framework material, etc. The resin layer may be formed using a known formation method or formation device.
將上述這些樹脂溶解於例如甲基乙基酮(MEK)、甲苯等溶劑中而製成樹脂液,藉由例如輥式塗布機法等將其塗布在上述表面處理銅箔上、及/或上述極薄銅層上、或上述含有耐熱層、防銹層、或上述鉻酸鹽皮膜層、或上述矽烷偶合劑層等的表面處理層上,接下來,視需要進行加熱乾燥,去除溶劑而設為B階段狀態。乾燥例如使用熱風乾燥爐即可,乾燥溫度為100~250℃,較佳為130~200℃即可。 These resins are dissolved in a solvent such as methyl ethyl ketone (MEK), toluene and the like to prepare a resin solution, and the resin is applied to the surface-treated copper foil by a roll coater method, and / or the above. On the ultra-thin copper layer, or on the surface treatment layer containing the heat-resistant layer, the rust-proof layer, the chromate film layer, or the silane coupling agent layer, etc., next, it is heated and dried as necessary to remove the solvent. It is a B-phase state. For the drying, for example, a hot-air drying furnace may be used, and the drying temperature may be 100 to 250 ° C, preferably 130 to 200 ° C.
具備上述樹脂層的表面處理銅箔、及/或附載體銅箔(附樹脂的附載體銅箔)是以如下形態使用:將該樹脂層重疊於基材後,對整體進行熱壓接使該樹脂層熱硬化,接下來,在為附載體銅箔時,剝離載體而使極薄銅層露出(當然,露出的是該極薄銅層的中間層側的表面),在表面處理銅箔或極薄銅層形成指定配線圖案。 The surface-treated copper foil provided with the said resin layer and / or the copper foil with a carrier (copper foil with a resin with a carrier) are used in the form which superimposed this resin layer on a base material, and thermocompression-bonded the whole, The resin layer is thermally cured. Next, in the case of a copper foil with a carrier, the carrier is peeled off to expose the ultra-thin copper layer (of course, the surface on the intermediate layer side of the ultra-thin copper layer is exposed). A very thin copper layer forms a specified wiring pattern.
如果使用該附樹脂的表面處理銅箔、及/或附載體銅箔,那麼能夠減少製造多層印刷配線基板時預浸料材的使用片數。而且,能夠使樹脂層的厚度成為能夠確保層間絕緣的厚度,或即便完全不使用預浸料材也能夠製造覆銅積層板。另外,這時也可以在基材的表面底塗(under coat)絕緣樹脂來進一步改善表面的平滑性。 By using the surface-treated copper foil with a resin and / or a copper foil with a carrier, it is possible to reduce the number of sheets of prepreg used in manufacturing a multilayer printed wiring board. In addition, the thickness of the resin layer can be set to a thickness capable of ensuring interlayer insulation, or a copper-clad laminated board can be manufactured without using a prepreg at all. In addition, at this time, the surface of the substrate may be under-coated with an insulating resin to further improve the surface smoothness.
此外,在不使用預浸料材時,有如下優點:節約了預浸料材的材料成本,另外,積層步驟也變得簡略,因此經濟上有利,而且,使所製造的多層印刷配線基板的厚度減薄了預浸料材的厚度,能夠製造一層的厚度為100μm以下的極薄多層印刷配線基板。 In addition, when a prepreg material is not used, there are advantages in that the material cost of the prepreg material is saved, and the lamination step is also simplified, so it is economically advantageous, and the multilayer printed wiring board is manufactured. The reduced thickness reduces the thickness of the prepreg material, and it is possible to manufacture an extremely thin multilayer printed wiring board having a thickness of 100 μm or less.
該樹脂層的厚度較佳為0.1~80μm。如果樹脂層的厚度小於0.1μm,那麼接著力會降低,在不介置預浸料材而將該附樹脂的附載體銅箔積層於具備內層材的基材時,存在難以確保與內層材的電路間的層間絕緣的情況。 The thickness of this resin layer is preferably 0.1 to 80 μm. If the thickness of the resin layer is less than 0.1 μm, the adhesion force will be reduced. When the resin-coated copper foil with a carrier is laminated on a substrate having an inner layer material without interposing a prepreg, it may be difficult to secure the inner layer. Insulation between layers of metal circuits.
另一方面,如果使樹脂層的厚度大於80μm,那麼難以藉由一次塗布步驟來形成目標厚度的樹脂層,會花費多餘的材料費與工時,因此經濟上不利。進而,所形成的樹脂層的柔性較差,因此在處理時容易產生裂痕等,另外,存在當與內層材熱壓接時發生過剩的樹脂流動而難以順利地進行積層的情況。 On the other hand, if the thickness of the resin layer is greater than 80 μm, it is difficult to form a resin layer of a target thickness in a single coating step, and excessive material costs and man-hours are consumed, which is economically disadvantageous. Furthermore, since the formed resin layer has poor flexibility, cracks and the like are likely to occur during processing. In addition, excessive resin flow may occur during thermal compression bonding with the inner layer material, and it may be difficult to perform lamination smoothly.
進而,作為附樹脂的附載體銅箔的另一個製品形態,也可以在上述極薄銅層所具有的表面處理層上、或上述耐熱層、防銹層、或上述鉻酸鹽處理層、或上述矽烷偶合處理層上利用樹脂層進行被覆,製成半硬化狀態後,接下來,將載體剝離,從而以不存在載體的附樹脂的銅箔的形 態製造。 Furthermore, as another product form of the copper foil with a carrier and a resin, the surface treatment layer of the ultra-thin copper layer, the heat-resistant layer, the rust-proof layer, or the chromate-treated layer, or The silane coupling treatment layer is coated with a resin layer to form a semi-hardened state, and then the carrier is peeled off to produce the resin-coated copper foil without the carrier.
藉由在印刷配線板搭載電子零件類,從而完成了印刷電路板。在本發明中,“印刷配線板”也包括像這樣搭載了電子零件類的印刷配線板及印刷電路板及印刷基板。 By mounting electronic components on the printed wiring board, a printed circuit board is completed. In the present invention, the "printed wiring board" also includes a printed wiring board, a printed circuit board, and a printed circuit board on which electronic components and the like are mounted.
另外,既可以使用該印刷配線板來製作電子機器,又可以使用該搭載了電子零件類的印刷電路板來製作電子機器,也可以使用該搭載了電子零件類的印刷基板來製作電子機器。以下,表示若干個使用本發明的附載體銅箔的印刷配線板的製造步驟的例子。此外,將本發明的表面處理銅箔用作附載體銅箔的極薄銅層也能夠同樣地製造印刷配線板。 In addition, an electronic device may be manufactured using the printed wiring board, an electronic device may be manufactured using the printed circuit board on which electronic components are mounted, or an electronic device may be manufactured using the printed circuit board on which electronic components are mounted. Hereinafter, several examples of the manufacturing process of the printed wiring board using the copper foil with a carrier of this invention are shown. In addition, a printed wiring board can be produced in the same manner by using the surface-treated copper foil of the present invention as an ultra-thin copper layer of a copper foil with a carrier.
在本發明的印刷配線板的製造方法的一實施方式中,包括如下步驟:準備本發明的附載體銅箔(以下,也可以將“附載體銅箔”及“極薄銅層”替換記載為表面處理銅箔,而且將“極薄銅層側”替換記載為“表面處理層側”而製造印刷配線板;在像這樣替換記載的情況下,也可以不記載載體而製造印刷配線板)與絕緣基板;將上述附載體銅箔與絕緣基板積層;將上述附載體銅箔與絕緣基板以使極薄銅層側與絕緣基板對向的方式積層後,經過剝離上述附載體銅箔的載體的步驟來形成覆銅積層板,其後利用半加成法、改良半加成法、部分加成法及減成法的任一種方法來形成電路。絕緣基板也可以是設有內層電路的絕緣基板。 In one embodiment of the method for manufacturing a printed wiring board according to the present invention, the method includes the steps of preparing the copper foil with a carrier of the present invention (hereinafter, "copper foil with a carrier" and "ultra-thin copper layer" may be replaced with " Surface-treated copper foil, and the "ultra-thin copper layer side" is replaced with "surface-treated layer side" to manufacture a printed wiring board; when the description is replaced like this, the printed wiring board may be manufactured without a carrier) and Insulating substrate; laminating the copper foil with carrier and the insulating substrate; laminating the copper foil with carrier and the insulating substrate such that the ultra-thin copper layer side faces the insulating substrate, and then peeling the carrier of the copper foil with the carrier Steps to form a copper clad laminate, and then use any of the semi-additive method, the modified semi-additive method, the partial additive method, and the subtractive method to form a circuit. The insulating substrate may be an insulating substrate provided with an inner layer circuit.
在本發明中,半加成法是指在絕緣基板或銅箔晶種層上進行薄無電解鍍覆,形成圖案後,使用電鍍及蝕刻形成導體圖案的方法。 In the present invention, the semi-additive method refers to a method in which a thin electroless plating is performed on an insulating substrate or a copper foil seed layer to form a pattern, and then a conductor pattern is formed using electroplating and etching.
因此,在使用半加成法的本發明的印刷配線板的製造方法的一實施方式中,包括如下步驟: 準備本發明的附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;將上述附載體銅箔與絕緣基板積層後,剝離上述附載體銅箔的載體;藉由使用酸等腐蝕溶液的蝕刻或電漿等方法,將剝離上述載體而露出的極薄銅層全部去除;在藉由利用蝕刻去除上述極薄銅層而露出的上述樹脂設置通孔或/及盲孔;對包含上述通孔或/及盲孔的區域進行去膠渣處理;對上述樹脂及包含上述通孔或/及盲孔的區域設置無電解鍍覆層;在上述無電解鍍覆層上設置鍍覆阻劑;對上述鍍覆阻劑進行曝光,其後,去除要形成電路的區域的鍍覆阻劑;在已去除上述鍍覆阻劑的上述要形成電路的區域設置電解鍍覆層;去除上述鍍覆阻劑;及藉由快速蝕刻等去除上述要形成電路的區域以外的區域中存在的無電解鍍覆層。 Therefore, one embodiment of the method for manufacturing a printed wiring board of the present invention using the semi-additive method includes the following steps: preparing the copper foil with a carrier and an insulating substrate of the present invention; and laminating the copper foil with a carrier and the insulating substrate ; After laminating the copper foil with a carrier and an insulating substrate, peel the carrier of the copper foil with a carrier; and remove all the ultra-thin copper layers exposed by peeling the carrier by using an etching solution such as an acid or an etching solution or plasma. ; Through holes or blind holes are provided on the resin exposed by removing the ultra-thin copper layer by etching; slag removal treatment is performed on the area containing the through holes or / and blind holes; An electroless plating layer is provided in the area of the through hole or / and the blind hole; a plating resist is provided on the electroless plating layer; the plating resist is exposed, and thereafter, the plating in the area where the circuit is to be formed is removed. A resist; an electrolytic plating layer is provided in the above-mentioned region where the circuit to be formed has been removed; the above-mentioned plating resist is removed; and the above-mentioned region where the circuit is to be formed is removed by rapid etching or the like Electroless plating is present in the outer area.
在使用半加成法的本發明的印刷配線板的製造方法的另一實施方式中,包括如下步驟:準備本發明的附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;將上述附載體銅箔與絕緣基板積層後,剝離上述附載體銅箔的載體;在剝離上述載體而露出的極薄銅層與上述絕緣樹脂基板設置通孔或/及盲孔; 對包含上述通孔或/及盲孔的區域進行去膠渣處理;藉由使用酸等腐蝕溶液的蝕刻或電漿等方法,將剝離上述載體而露出的極薄銅層全部去除;對藉由利用蝕刻等去除上述極薄銅層而露出的上述樹脂及包含上述通孔或/及盲孔的區域設置無電解鍍覆層;在上述無電解鍍覆層上設置鍍覆阻劑;對上述鍍覆阻劑進行曝光,其後,去除要形成電路的區域的鍍覆阻劑;在已去除上述鍍覆阻劑的上述要形成電路的區域設置電解鍍覆層;去除上述鍍覆阻劑;及藉由快速蝕刻等去除上述要形成電路的區域以外的區域中存在的無電解鍍覆層。 In another embodiment of the method for manufacturing a printed wiring board of the present invention using the semi-additive method, the method includes the following steps: preparing the copper foil with a carrier and an insulating substrate of the present invention; laminating the copper foil with a carrier and the insulating substrate; After laminating the copper foil with a carrier and an insulating substrate, the carrier with the copper foil with a carrier is peeled off; a through hole or / and a blind hole is provided in the ultra-thin copper layer and the insulating resin substrate exposed by peeling the carrier; Holes and / or blind holes are subjected to slag removal treatment; the ultra-thin copper layer exposed by peeling the carrier is completely removed by etching using an etching solution such as an acid or a plasma; the removal by etching or the like An electroless plating layer is provided on the resin exposed by the ultra-thin copper layer and an area including the through hole or / and a blind hole; a plating resist is provided on the electroless plating layer; and the plating resist is performed. After the exposure, the plating resist in the region where the circuit is to be formed is removed; an electrolytic plating layer is provided in the above-mentioned region where the circuit is to be formed in which the plating resist has been removed; the plating resist is removed; and Quick etching or the like removes the electroless plating layer existing in the area other than the above-mentioned area where the circuit is to be formed.
在使用半加成法的本發明的印刷配線板的製造方法的另一實施方式中,包括如下步驟:準備本發明的附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;將上述附載體銅箔與絕緣基板積層後,剝離上述附載體銅箔的載體;在剝離上述載體而露出的極薄銅層與上述絕緣樹脂基板設置通孔或/及盲孔;藉由使用酸等腐蝕溶液的蝕刻或電漿等方法,將剝離上述載體而露出的極薄銅層全部去除;對包含上述通孔或/及盲孔的區域進行去膠渣處理;對藉由利用蝕刻等去除上述極薄銅層而露出的上述樹脂及包含上述通 孔或/及盲孔的區域設置無電解鍍覆層;在上述無電解鍍覆層上設置鍍覆阻劑;對上述鍍覆阻劑進行曝光,其後,去除要形成電路的區域的鍍覆阻劑;在已去除上述鍍覆阻劑的上述要形成電路的區域設置電解鍍覆層;去除上述鍍覆阻劑;及藉由快速蝕刻等去除上述要形成電路的區域以外的區域中存在的無電解鍍覆層。 In another embodiment of the method for manufacturing a printed wiring board of the present invention using the semi-additive method, the method includes the following steps: preparing the copper foil with a carrier and an insulating substrate of the present invention; laminating the copper foil with a carrier and the insulating substrate; After laminating the copper foil with a carrier and an insulating substrate, the carrier with the copper foil with a carrier is peeled off; a through-hole or / and a blind hole is provided in the ultra-thin copper layer and the insulating resin substrate exposed by peeling the carrier; by using an acid Etching method such as etching solution or plasma, etc., all the ultra-thin copper layer exposed by peeling the carrier is removed; the area containing the above-mentioned through hole and / or blind hole is subjected to slag removal treatment; An electroless plating layer is provided on the resin exposed by the ultra-thin copper layer and an area including the through hole or / and a blind hole; a plating resist is provided on the electroless plating layer; and the plating resist is performed. After the exposure, the plating resist in the region where the circuit is to be formed is removed; an electrolytic plating layer is provided in the above-mentioned region where the circuit is to be formed in which the plating resist has been removed; the plating resist is removed; and Quick etching or the like removes the electroless plating layer existing in the area other than the above-mentioned area where the circuit is to be formed.
在使用半加成法的本發明的印刷配線板的製造方法的另一實施方式中,包括如下步驟:準備本發明的附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;將上述附載體銅箔與絕緣基板積層後,剝離上述附載體銅箔的載體;藉由使用酸等腐蝕溶液的蝕刻或電漿等方法,將剝離上述載體而露出的極薄銅層全部去除;對藉由利用蝕刻去除上述極薄銅層而露出的上述樹脂的表面設置無電解鍍覆層;在上述無電解鍍覆層上設置鍍覆阻劑;對上述鍍覆阻劑進行曝光,其後,去除要形成電路的區域的鍍覆阻劑;在已去除上述鍍覆阻劑的上述要形成電路的區域設置電解鍍覆層;去除上述鍍覆阻劑;及藉由快速蝕刻等去除上述要形成電路的區域以外的區域中存在的無電解鍍覆層及極薄銅層。 In another embodiment of the method for manufacturing a printed wiring board of the present invention using the semi-additive method, the method includes the following steps: preparing the copper foil with a carrier and an insulating substrate of the present invention; laminating the copper foil with a carrier and the insulating substrate; After the copper foil with a carrier and the insulating substrate are laminated, the carrier with the copper foil with the carrier is peeled off; all the ultra-thin copper layers exposed by peeling the carrier are removed by etching using an etching solution such as an acid or a plasma; An electroless plating layer is provided on the surface of the resin exposed by removing the ultra-thin copper layer by etching; a plating resist is provided on the electroless plating layer; the plating resist is exposed, and thereafter Removing the plating resist in the region where the circuit is to be formed; providing an electrolytic plating layer in the above-mentioned region where the circuit is to be formed where the plating resist has been removed; removing the aforementioned plating resist; and removing the aforementioned resist by rapid etching or the like An electroless plating layer and an extremely thin copper layer are present in a region other than a region where a circuit is formed.
在本發明中,改良半加成法是指如下方法:在絕緣層上積層金屬箔,利用鍍覆阻劑來保護非電路形成部,藉由電解鍍覆在電路形成部賦予銅厚後,去除阻劑,藉由(快速)蝕刻去除上述電路形成部以外的金屬箔,由此在絕緣層上形成電路。 In the present invention, the modified semi-additive method refers to a method in which a metal foil is laminated on an insulating layer, a non-circuit forming portion is protected by a plating resist, and copper is added to the circuit forming portion by electrolytic plating, and then removed. The resist is used to form a circuit on the insulating layer by (fast) etching removing the metal foil other than the circuit forming portion.
因此,在使用改良半加成法的本發明的印刷配線板的製造方法的一實施方式中,包括如下步驟:準備本發明的附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;將上述附載體銅箔與絕緣基板積層後,剝離上述附載體銅箔的載體;在剝離上述載體而露出的極薄銅層與絕緣基板設置通孔或/及盲孔;對包含上述通孔或/及盲孔的區域進行去膠渣處理;對包含上述通孔或/及盲孔的區域設置無電解鍍覆層;在剝離上述載體而露出的極薄銅層表面設置鍍覆阻劑;設置上述鍍覆阻劑後,利用電解鍍覆來形成電路;去除上述鍍覆阻劑;及利用快速蝕刻將藉由去除上述鍍覆阻劑而露出的極薄銅層去除。 Therefore, in one embodiment of the method for manufacturing a printed wiring board of the present invention using an improved semi-additive method, the method includes the steps of: preparing the copper foil with a carrier and an insulating substrate of the present invention; Lamination; after laminating the copper foil with a carrier and an insulating substrate, peeling the carrier with the copper foil from the carrier; providing a through hole or / and a blind hole in the ultra-thin copper layer and the insulating substrate exposed by peeling the carrier; Holes and / or blind holes are subjected to slag removal treatment; an electroless plating layer is provided on the area containing the above-mentioned through holes and / or blind holes; a plating resist is provided on the surface of the ultra-thin copper layer exposed by peeling the carrier ; After the above-mentioned plating resist is provided, a circuit is formed by electrolytic plating; the above-mentioned plating resist is removed; and the ultra-thin copper layer exposed by removing the above-mentioned plating resist is removed by rapid etching.
在使用改良半加成法的本發明的印刷配線板的製造方法的另一實施方式中,包括如下步驟:準備本發明的附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;將上述附載體銅箔與絕緣基板積層後,剝離上述附載體銅箔的載體;在剝離上述載體而露出的極薄銅層上設置鍍覆阻劑; 對上述鍍覆阻劑進行曝光,其後,去除要形成電路的區域的鍍覆阻劑;在已去除上述鍍覆阻劑的上述要形成電路的區域設置電解鍍覆層;去除上述鍍覆阻劑;及藉由快速蝕刻等去除上述要形成電路的區域以外的區域中存在的無電解鍍覆層及極薄銅層。 In another embodiment of the method for manufacturing a printed wiring board of the present invention using an improved semi-additive method, the method includes the steps of: preparing the copper foil with a carrier and an insulating substrate of the present invention; and laminating the copper foil with a carrier and the insulating substrate. ; After laminating the copper foil with a carrier and an insulating substrate, peeling the carrier with the copper foil from the carrier; setting a plating resist on the ultra-thin copper layer exposed by peeling the carrier; exposing the plating resist, After that, the plating resist in the region where the circuit is to be formed is removed; an electrolytic plating layer is provided in the above-mentioned region where the circuit is to be formed where the plating resist has been removed; the plating resist is removed; and the above is removed by rapid etching or the like An electroless plating layer and an extremely thin copper layer are present in a region other than a region where a circuit is to be formed.
在本發明中,部分加成法是指如下方法:對設置導體層而成的基板、視需要開設通孔或導孔用孔而成的基板上賦予催化核,進行蝕刻來形成導體電路,視需要設置阻焊劑或鍍覆阻劑後,藉由無電解鍍覆處理對上述導體電路上、通孔或導孔等進行加厚,由此製造印刷配線板。 In the present invention, the partial addition method refers to a method in which a substrate provided with a conductor layer and a substrate provided with through holes or via holes as required are provided with a catalytic core, and are etched to form a conductor circuit. It is necessary to provide a solder resist or a plating resist, and then thicken the above-mentioned conductor circuit, a through hole or a via hole by an electroless plating process, thereby manufacturing a printed wiring board.
因此,在使用部分加成法的本發明的印刷配線板的製造方法的一實施方式中,包括如下步驟:準備本發明的附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;將上述附載體銅箔與絕緣基板積層後,剝離上述附載體銅箔的載體;在剝離上述載體而露出的極薄銅層與絕緣基板設置通孔或/及盲孔;對包含上述通孔或/及盲孔的區域進行去膠渣處理;對包含上述通孔或/及盲孔的區域賦予催化核;在剝離上述載體而露出的極薄銅層表面設置蝕刻阻劑;對上述蝕刻阻劑進行曝光,形成電路圖案;藉由使用酸等腐蝕溶液的蝕刻或電漿等方法去除上述極薄銅層及上述催化核,形成電路;去除上述蝕刻阻劑; 在藉由使用酸等腐蝕溶液的蝕刻或電漿等方法去除上述極薄銅層及上述催化核而露出的上述絕緣基板表面,設置阻焊劑或鍍覆阻劑;及在未設置上述阻焊劑或鍍覆阻劑的區域設置無電解鍍覆層。 Therefore, an embodiment of the method for manufacturing a printed wiring board of the present invention using a partial addition method includes the steps of: preparing the copper foil with a carrier and an insulating substrate of the present invention; and laminating the copper foil with a carrier and the insulating substrate. ; After laminating the copper foil with a carrier and an insulating substrate, peeling the carrier with the copper foil with a carrier; providing a through hole or / and a blind hole in the ultra-thin copper layer and the insulating substrate exposed by peeling the carrier; and including the through hole Or / and the blind hole area to carry out the slag removal treatment; to give a catalytic core to the area containing the through hole or / and the blind hole; to provide an etching resist on the surface of the ultra-thin copper layer exposed by peeling the carrier; Exposure with an agent to form a circuit pattern; removal of the ultra-thin copper layer and the catalytic nucleus by means of etching using an etching solution such as an acid or plasma to form a circuit; removal of the above-mentioned etching resist; use of an etching solution such as an acid Using a method such as etching or plasma to remove the ultra-thin copper layer and the catalytic core and expose the surface of the insulating substrate, a solder resist or a plating resist is provided; and the resist is not provided The area of the solder or plating resist is provided with an electroless plating layer.
在本發明中,減成法是指藉由蝕刻等選擇性地去除覆銅積層板上的銅箔的無用部分,從而形成導體圖案的方法。 In the present invention, the subtractive method refers to a method of selectively removing unnecessary portions of a copper foil on a copper-clad laminate by etching or the like to form a conductor pattern.
因此,在使用減成法的本發明的印刷配線板的製造方法的一實施方式中,包括如下步驟:準備本發明的附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;將上述附載體銅箔與絕緣基板積層後,剝離上述附載體銅箔的載體;在剝離上述載體而露出的極薄銅層與絕緣基板設置通孔或/及盲孔;對包含上述通孔或/及盲孔的區域進行去膠渣處理;對包含上述通孔或/及盲孔的區域設置無電解鍍覆層;在上述無電解鍍覆層的表面設置電解鍍覆層;在上述電解鍍覆層或/及上述極薄銅層的表面設置蝕刻阻劑;對上述蝕刻阻劑進行曝光,形成電路圖案;藉由使用酸等腐蝕溶液的蝕刻或電漿等方法去除上述極薄銅層及上述無電解鍍覆層及上述電解鍍覆層,形成電路;及去除上述蝕刻阻劑。 Therefore, one embodiment of the method for manufacturing a printed wiring board of the present invention using the subtractive method includes the steps of: preparing the copper foil with a carrier and an insulating substrate of the present invention; and laminating the copper foil with a carrier and the insulating substrate; After the copper foil with a carrier and the insulating substrate are laminated, the carrier with the copper foil with a carrier is peeled off; through holes or / and blind holes are provided in the ultra-thin copper layer and the insulating substrate that are exposed after the carrier is peeled off; / And the area of the blind hole is subjected to slag removal treatment; the area containing the above-mentioned through hole or / and the blind hole is provided with an electroless plating layer; an electrolytic plating layer is provided on the surface of the above electroless plating layer; An etching resist is provided on the surface of the cladding layer or / and the ultra-thin copper layer; the etching resist is exposed to form a circuit pattern; the ultra-thin copper layer is removed by etching using an etching solution such as an acid or a plasma, and Forming the circuit by the electroless plating layer and the electrolytic plating layer; and removing the etching resist.
在使用減成法的本發明的印刷配線板的製造方法的另一實施方式中,包括如下步驟:準備本發明的附載體銅箔與絕緣基板; 將上述附載體銅箔與絕緣基板積層;將上述附載體銅箔與絕緣基板積層後,剝離上述附載體銅箔的載體;在剝離上述載體而露出的極薄銅層與絕緣基板設置通孔或/及盲孔;對包含上述通孔或/及盲孔的區域進行去膠渣處理;對包含上述通孔或/及盲孔的區域設置無電解鍍覆層;在上述無電解鍍覆層的表面形成掩膜(mask);在未形成掩膜的上述無電解鍍覆層的表面設置電解鍍覆層;在上述電解鍍覆層或/及上述極薄銅層的表面設置蝕刻阻劑;對上述蝕刻阻劑進行曝光,形成電路圖案;藉由使用酸等腐蝕溶液的蝕刻或電漿等方法去除上述極薄銅層及上述無電解鍍覆層,形成電路;及去除上述蝕刻阻劑。 In another embodiment of the method for manufacturing a printed wiring board of the present invention using the subtractive method, the method includes the steps of: preparing the copper foil with a carrier and an insulating substrate of the present invention; laminating the copper foil with a carrier and the insulating substrate; After the copper foil with a carrier and the insulating substrate are laminated, the carrier with the copper foil with a carrier is peeled off; through holes or / and blind holes are provided in the ultra-thin copper layer and the insulating substrate that are exposed after the carrier is peeled off; Deslagging treatment is performed in the area of the blind hole and the blind hole; an electroless plating layer is provided in the area containing the above-mentioned through hole or / and the blind hole; a mask is formed on the surface of the electroless plating layer; The surface of the electroless plating layer of the film is provided with an electrolytic plating layer; an etching resist is provided on the surface of the electrolytic plating layer or / and the ultra-thin copper layer; the etching resist is exposed to form a circuit pattern; Removing the ultra-thin copper layer and the electroless plating layer by a method such as etching using an etching solution such as acid or plasma to form a circuit; and removing the etching resist.
也可以不進行設置通孔或/及盲孔的步驟及其後的去膠渣步驟。 The step of setting the through hole and / or the blind hole and the subsequent step of removing the slag may not be performed.
這裡,使用附圖對使用本發明的附載體銅箔的印刷配線板製造方法的具體例進行詳細說明。此外,這裡對設置一次粒子層及二次粒子層作為粗化處理層的情況進行說明。 Here, the specific example of the manufacturing method of the printed wiring board using the copper foil with a carrier of this invention is demonstrated in detail using drawing. In addition, the case where a primary particle layer and a secondary particle layer are provided as a roughening process layer is demonstrated here.
首先,如圖1-A所示,準備具有在表面形成了粗化處理層的極薄銅層的附載體銅箔(第一層)。 First, as shown in FIG. 1-A, a copper foil with a carrier (first layer) having an ultra-thin copper layer having a roughened layer formed on the surface is prepared.
其次,如圖1-B所示,在極薄銅層的粗化處理層上塗布阻劑,進行曝光、顯影,將阻劑蝕刻為指定形狀。 Next, as shown in FIG. 1-B, a resist is coated on the roughened layer of the ultra-thin copper layer, exposed and developed, and the resist is etched into a predetermined shape.
其次,如圖1-C所示,形成電路用鍍層後,去除阻劑,由此形成指定 形狀的電路鍍層。 Next, as shown in FIG. 1-C, after forming a plating layer for a circuit, the resist is removed to form a circuit plating layer of a predetermined shape.
其次,如圖2-D所示,以覆蓋電路鍍層的方式(以埋沒電路鍍層的方式)在極薄銅層上設置埋入樹脂而積層樹脂層,接下來,從極薄銅層側接著另一附載體銅箔(第二層)。 Next, as shown in Fig. 2-D, the resin layer is laminated on the ultra-thin copper layer by covering the circuit plating layer (by burying the circuit plating layer). Next, the resin layer is laminated from the ultra-thin copper layer side. One copper foil with carrier (second layer).
其次,如圖2-E所示,從第二層附載體銅箔剝離載體。 Next, as shown in Figure 2-E, the carrier is peeled from the second layer of copper foil with a carrier.
其次,如圖2-F所示,在樹脂層的指定位置進行雷射開孔,使電路鍍層露出而形成盲孔。 Next, as shown in Figure 2-F, laser drilling is performed at a specified position of the resin layer to expose the circuit plating layer and form blind holes.
其次,如圖3-G所示,在盲孔埋入銅,形成通孔填料。 Secondly, as shown in Figure 3-G, copper is buried in the blind holes to form through-hole fillers.
其次,如圖3-H所示,在通孔填料上,像上述圖1-B及圖1-C那樣形成電路鍍層。 Next, as shown in Fig. 3-H, a circuit plating layer is formed on the via filler as shown in Figs. 1-B and 1-C.
其次,如圖3-I所示,從第一層附載體銅箔剝離載體。 Next, as shown in Fig. 3-I, the carrier is peeled from the first layer of copper foil with a carrier.
其次,如圖4-J所示,藉由快速蝕刻去除兩表面的極薄銅層,使樹脂層內的電路鍍層的表面露出。 Secondly, as shown in FIG. 4-J, the ultra-thin copper layers on both surfaces are removed by rapid etching to expose the surface of the circuit plating layer in the resin layer.
其次,如圖4-K所示,在樹脂層內的電路鍍層上形成凸塊,在該焊料上形成銅柱。像這樣製作使用本發明的附載體銅箔的印刷配線板。 Next, as shown in FIG. 4-K, bumps are formed on the circuit plating layer in the resin layer, and copper pillars are formed on the solder. In this manner, a printed wiring board using the copper foil with a carrier of the present invention was produced.
此外,在上述印刷配線板的製造方法中,也可以將“極薄銅層”替換記載為載體,將“載體”替換記載為極薄銅層,在附載體銅箔的載體側的表面形成電路,利用樹脂埋入電路,從而製造印刷配線板。 In addition, in the manufacturing method of the printed wiring board described above, the "ultra-thin copper layer" may be replaced with a carrier, the "carrier" may be replaced with an ultra-thin copper layer, and a circuit may be formed on a surface of a carrier side with a copper foil with a carrier. , The circuit is embedded with resin to manufacture a printed wiring board.
上述另一附載體銅箔(第二層)既可以使用本發明的附載體銅箔,也可以使用現有的附載體銅箔,進而也可以使用通常的銅箔。另外,也可以在圖3-H所示的第二層的電路上,進而形成一層或多層電路,也可以藉由半加成法、減成法、部分加成法或改良半加成法的任一種方法來形 成這些電路。 As the other copper foil with a carrier (second layer), the copper foil with a carrier of the present invention may be used, or the existing copper foil with a carrier may be used, and a general copper foil may also be used. In addition, it is also possible to form one or more layers of circuits on the second layer of the circuit shown in Fig. 3-H. It is also possible to use a semi-additive method, a subtractive method, a partial addition method, or an improved semi-additive method. Either method is used to form these circuits.
根據如上所述的印刷配線板的製造方法,因為成為電路鍍層埋入到樹脂層中的構成,所以在例如圖4-J所示的利用快速蝕刻去除極薄銅層時,電路鍍層被樹脂層保護,其形狀得以保持,由此,容易形成微細電路。另外,因為電路鍍層被樹脂層保護,所以耐遷移性提升,從而很好地抑制電路配線的導通。因此,變得容易形成微細電路。另外,如圖4-J及圖4-K所示,當利用快速蝕刻去除極薄銅層時,電路鍍層的露出面成為從樹脂層凹陷的形狀,因此容易在該電路鍍層上形成凸塊,進而容易在其上形成銅柱,從而提升製造效率。 According to the manufacturing method of the printed wiring board as described above, the circuit plating layer is embedded in the resin layer. Therefore, when the ultra-thin copper layer is removed by rapid etching as shown in FIG. 4-J, the circuit plating layer is covered by the resin layer. It is easy to form a fine circuit by protecting its shape. In addition, since the circuit plating layer is protected by the resin layer, the migration resistance is improved, and the conduction of the circuit wiring is well suppressed. Therefore, it becomes easy to form a fine circuit. In addition, as shown in FIGS. 4-J and 4-K, when the ultra-thin copper layer is removed by rapid etching, the exposed surface of the circuit plating layer becomes a shape recessed from the resin layer, so it is easy to form bumps on the circuit plating layer. It is easy to form copper pillars thereon, thereby improving manufacturing efficiency.
此外,埋入樹脂可以使用公知的樹脂、預浸料。例如可以使用BT(雙馬來醯亞胺三)樹脂或含浸了BT樹脂的玻璃布即預浸料、Ajinomoto Fine-Techno股份有限公司製造的ABF膜或ABF。另外,上述埋入樹脂可以使用本說明書所記載的樹脂層及/或樹脂及/或預浸料。 As the embedded resin, a known resin or prepreg can be used. For example, BT (bismaleimide ) Resin or glass cloth impregnated with BT resin, that is, prepreg, ABF film or ABF manufactured by Ajinomoto Fine-Techno Co., Ltd. As the embedded resin, a resin layer and / or a resin and / or a prepreg described in this specification can be used.
另外,上述第一層所使用的附載體銅箔也可以在該附載體銅箔的表面具有基板或樹脂層。藉由具有該基板或樹脂層而支撐用於第一層的附載體銅箔,不易產生皺褶,因此會有生產性提升的優點。此外,上述基板或樹脂層只要發揮支撐上述第一層所使用的附載體銅箔的效果,那麼就可以使用所有的基板或樹脂層。例如,作為上述基板或樹脂層,可以使用本申請說明書所記載的載體、預浸料、樹脂層、或公知的載體、預浸料、樹脂層、金屬板、金屬箔、無機化合物的板、無機化合物的箔、有機化合物的板、有機化合物的箔。 Moreover, the copper foil with a carrier used for the said 1st layer may have a board | substrate or a resin layer on the surface of this copper foil with a carrier. By having the substrate or the resin layer to support the copper foil with a carrier for the first layer, wrinkles are less likely to occur, and therefore there is an advantage that productivity is improved. In addition, as long as the substrate or the resin layer has the effect of supporting the copper foil with a carrier used in the first layer, all the substrates or the resin layer can be used. For example, as the substrate or the resin layer, a carrier, a prepreg, a resin layer, or a known carrier, a prepreg, a resin layer, a metal plate, a metal foil, an inorganic compound plate, or an inorganic material described in the present specification can be used. Compound foil, plate of organic compound, foil of organic compound.
另外,本發明的印刷配線板的製造方法(無芯工法)也可以 包括如下步驟:將本發明的附載體銅箔的上述極薄銅層側表面或上述載體側表面與樹脂基板積層;在與上述樹脂基板積層的極薄銅層側表面或在與上述載體側表面為相反側的附載體銅箔的表面,至少進行設一次置樹脂層與電路這兩層;及當形成上述樹脂層及電路這兩層後,從上述附載體銅箔剝離上述載體或上述極薄銅層。關於該無芯工法,作為具體例,首先,將本發明的附載體銅箔的極薄銅層側表面或載體側表面與樹脂基板積層,製造積層體(也稱為覆銅積層板、覆銅積層體)。其後,在與樹脂基板積層的極薄銅層側表面、或在與上述載體側表面為相反側的附載體銅箔的表面形成樹脂層。也可以在形成於載體側表面或極薄銅層側表面的樹脂層,從載體側或極薄銅層側進而積層另一附載體銅箔。另外,也可以將如下積層體用於上述印刷配線板的製造方法(無芯工法),上述積層體具有以樹脂基板或樹脂或預浸料為中心,在該樹脂基板或樹脂或預浸料的兩表面側,以載體/中間層/極薄銅層的順序或極薄銅層/中間層/載體的順序積層附載體銅箔的構成;或者具有以“載體/中間層/極薄銅層/樹脂基板或樹脂或預浸料/載體/中間層/極薄銅層”的順序積層的構成;或者具有以“載體/中間層/極薄銅層/樹脂基板/載體/中間層/極薄銅層”的順序積層的構成;或者具有以“極薄銅層/中間層/載體/樹脂基板/載體/中間層/極薄銅層”的順序積層的構成。而且,也可以藉由在該積層體的兩端的極薄銅層或載體的露出表面設置另一樹脂層,進而設置銅層或金屬層後,對該銅層或金屬層進行加工而形成電路。進而,也可以將另一樹脂層以埋入該電路的方式設置在該電路上。另外,也可進行一次以上這種電路及樹脂層的形成(堆積工法)。然後,對於這樣形成的積層體(以下也稱為積層體B),能夠將各個附載體銅 箔的極薄銅層或載體從載體或極薄銅層剝離而製作無芯基板。此外,上述無芯基板的製作也可以使用兩個附載體銅箔,製作下述具有極薄銅層/中間層/載體/載體/中間層/極薄銅層的構成的積層體、或具有載體/中間層/極薄銅層/極薄銅層/中間層/載體的構成的積層體、或具有載體/中間層/極薄銅層/載體/中間層/極薄銅層的構成的積層體,將該積層體用於中心。可以在這些積層體(以下也稱為積層體A)的兩側的極薄銅層或載體的表面進行一次以上設置樹脂層及電路這兩層,在進行一次以上設置樹脂層及電路這兩層後,將各個附載體銅箔的極薄銅層或載體從載體或極薄銅層剝離而製作無芯基板。上述積層體也可以在極薄銅層的表面、載體的表面、載體與載體之間、極薄銅層與極薄銅層之間、極薄銅層與載體之間具有其它層。其它層也可以是樹脂基板或樹脂層。此外,在本說明書中,“極薄銅層的表面”、“極薄銅層側表面”、“極薄銅層表面”、“載體的表面”、“載體側表面”、“載體表面”、“積層體的表面”、“積層體表面”在極薄銅層、載體、積層體在極薄銅層表面、載體表面、積層體表面具有其它層的情況下,是包含該其它層的表面(最表面)的概念。另外,積層體較佳為具有極薄銅層/中間層/載體/載體/中間層/極薄銅層的構成。其原因在於:當使用該積層體來製作無芯基板時,在無芯基板側配置極薄銅層,所以容易使用改良半加成法在無芯基板上形成電路。另外,其原因在於:極薄銅層的厚度薄,因此容易去除該極薄銅層,容易在去除極薄銅層後使用半加成法在無芯基板上形成電路。 In addition, the manufacturing method (coreless construction method) of the printed wiring board of the present invention may include the steps of: laminating the ultra-thin copper layer side surface of the copper foil with a carrier or the carrier side surface of the present invention with a resin substrate; The resin substrate laminated surface of the ultra-thin copper layer or the surface of the copper foil with a carrier on the opposite side to the carrier side surface should be provided with a resin layer and a circuit at least once; and when the resin layer and the circuit are formed After these two layers, the carrier or the ultra-thin copper layer is peeled from the copper foil with a carrier. Regarding this coreless construction method, as a specific example, first, the ultra-thin copper layer side surface or carrier side surface of the copper foil with a carrier of the present invention is laminated with a resin substrate to produce a laminated body (also referred to as a copper-clad laminated board, copper-clad Laminated body). Thereafter, a resin layer is formed on the surface of the ultra-thin copper layer laminated with the resin substrate, or on the surface of the copper foil with a carrier on the side opposite to the carrier-side surface. A copper foil with a carrier may be laminated on the resin layer formed on the carrier-side surface or the ultra-thin copper layer side surface from the carrier side or the ultra-thin copper layer side. In addition, a laminated body may be used in the method for manufacturing the printed wiring board (coreless construction method). The laminated body has a resin substrate or a resin or a prepreg as a center. Both sides of the surface, in the order of carrier / intermediate layer / ultra-thin copper layer or super-thin copper layer / intermediate layer / carrier in the order of lamination with carrier copper foil; Resin substrate or resin or prepreg / carrier / intermediate layer / extremely thin copper layer "; or having a" carrier / intermediate layer / extremely thin copper layer / resin substrate / carrier / intermediate layer / extremely thin copper layer " Layer ", or a structure in which the layers are laminated in the order of" ultra-thin copper layer / intermediate layer / carrier / resin substrate / carrier / intermediate layer / ultra-thin copper layer ". In addition, another resin layer may be provided on the ultra-thin copper layer or the exposed surface of the carrier at both ends of the laminated body, and further, a copper layer or a metal layer may be provided, and then the copper layer or the metal layer may be processed to form a circuit. Furthermore, another resin layer may be provided on the circuit so as to be buried in the circuit. In addition, the formation of the circuit and the resin layer (stacking method) may be performed more than once. Then, with respect to the multilayer body (hereinafter also referred to as multilayer body B) thus formed, the ultra-thin copper layer or carrier of each copper foil with a carrier can be peeled from the carrier or the ultra-thin copper layer to produce a coreless substrate. In addition, in the production of the above-mentioned coreless substrate, two copper foils with a carrier may be used to produce a laminated body having the following structure having an ultra-thin copper layer / intermediate layer / carrier / carrier / intermediate layer / extremely thin copper layer or a carrier Laminated body consisting of / intermediate layer / ultra-thin copper layer / ultra-thin copper layer / intermediate layer / carrier, or a laminate having a carrier / intermediate layer / ultra-thin copper layer / carrier / intermediate layer / ultra-thin copper layer Use this laminate for the center. The resin layer and the circuit layer can be provided more than once on the surface of the ultra-thin copper layer or the carrier on both sides of these laminates (hereinafter also referred to as the laminate A), and the resin layer and the circuit layer can be provided more than once. After that, the ultra-thin copper layer or carrier of each copper foil with a carrier is peeled from the carrier or the ultra-thin copper layer to produce a coreless substrate. The laminated body may have other layers on the surface of the ultra-thin copper layer, the surface of the carrier, between the carrier and the carrier, between the ultra-thin copper layer and the ultra-thin copper layer, and between the ultra-thin copper layer and the carrier. The other layer may be a resin substrate or a resin layer. In addition, in this specification, “the surface of the ultra-thin copper layer”, “the surface of the ultra-thin copper layer”, “the surface of the ultra-thin copper layer”, “the surface of the carrier”, “the surface of the carrier side”, “the surface of the carrier”, When the "layer surface" and "layer surface" have other layers on the surface of the ultra-thin copper layer, the carrier, and the surface of the layer, the surface of the layer, and the surface of the multilayer body include other layers ( The most superficial) concept. Moreover, it is preferable that a laminated body has a structure which has an ultra-thin copper layer, an intermediate layer, a carrier, a carrier, an intermediate layer, and an ultra-thin copper layer. The reason is that when using this laminated body to make a coreless substrate, an ultra-thin copper layer is arranged on the coreless substrate side, so it is easy to form a circuit on the coreless substrate using an improved semi-additive method. In addition, the reason is that the thickness of the ultra-thin copper layer is thin, so it is easy to remove the ultra-thin copper layer, and it is easy to form a circuit on the coreless substrate by using a semi-additive method after removing the ultra-thin copper layer.
此外,在本說明書中,沒有特別記載為“積層體A”或“積層體B”的“積層體”表示至少包括積層體A及積層體B的積層體。 In addition, in this specification, a "laminated body" not specifically described as "laminated body A" or "laminated body B" means a laminated body including at least laminated body A and laminated body B.
此外,在上述無芯基板的製造方法中,藉由利用樹脂覆蓋附載體銅箔或上述積層體(包括積層體A)的端面的一部分或全部,而以堆積工法製造印刷配線板時,能夠防止藥液滲入中間層或構成積層體的一個附載體銅箔與另一個附載體銅箔之間,從而能夠防止因藥液滲入導致極薄銅層與載體分離或附載體銅箔腐蝕,能夠提升產率。作為這裡使用的“覆蓋附載體銅箔的端面的一部分或全部的樹脂”或“覆蓋積層體的端面的一部分或全部的樹脂”,可以使用可用在樹脂層的樹脂或公知的樹脂。另外,在上述無芯基板的製造方法中,當俯視附載體銅箔或積層體時,附載體銅箔或積層體的積層部分(載體與極薄銅層的積層部分、或一個附載體銅箔與另一個附載體銅箔的積層部分)的外周的至少一部分也可以被樹脂或預浸料覆蓋。另外,利用上述無芯基板的製造方法所形成的積層體(積層體A)也可以使一對附載體銅箔可相互分離地接觸而構成。另外,在俯視該附載體銅箔時,也可遍及附載體銅箔或積層體的積層部分(載體與極薄銅層的積層部分、或一個附載體銅箔與另一個附載體銅箔的積層部分)的外周整體或積層部分的整個面以樹脂或預浸料覆蓋。另外,較佳為當俯視時樹脂或預浸料大於附載體銅箔或積層體或積層體的積層部分,且較佳設為如下積層體:具有在附載體銅箔或積層體的兩面積層該樹脂或預浸料,且由樹脂或預浸料包裹(包圍)附載體銅箔或積層體的構成。藉由設為這種構成,當俯視附載體銅箔或積層體時,附載體銅箔或積層體的積層部分被樹脂或預浸料覆蓋,能夠防止其它部件從來自側面的方向碰到該部分的側向、即積層方向,結果能夠減少處理中的載體與極薄銅層、或附載體銅箔彼此的剝離。另外,藉由以不使附載體銅箔或積層體的積層部分的外周露出的方 式利用樹脂或預浸料進行覆蓋,能夠防止如上所述在藥液處理步驟中藥液滲入到該積層部分的介面,能夠防止附載體銅箔的腐蝕或侵蝕。此外,當從積層體的一對附載體銅箔分離一個附載體銅箔時、或將附載體銅箔的載體與銅箔(極薄銅層)分離時,在被樹脂或預浸料覆蓋的附載體銅箔或積層體的積層部分(載體與極薄銅層的積層部分、或一個附載體銅箔與另一個附載體銅箔的積層部分)因樹脂或預浸料等而牢固地密合的情況下,有時必須藉由切斷等去除該積層部分等。 In addition, in the method for manufacturing a coreless substrate described above, when a part or all of the end face of the copper foil with a carrier or the laminated body (including the laminated body A) is covered with a resin, a printed wiring board can be prevented from being deposited by a stacking method. The medicinal solution penetrates into the middle layer or between one copper foil with a carrier and another copper foil with a carrier, so as to prevent the ultra-thin copper layer from being separated from the carrier due to the penetration of the medicinal solution or the corrosion of the copper foil with the carrier, which can improve the production. rate. As the "resin covering part or all of the end surface of the copper foil with a carrier" or "resin covering part or all of the end surface of the laminated body" used herein, a resin usable in a resin layer or a known resin can be used. In addition, in the method for manufacturing a coreless substrate described above, when the copper foil with a carrier or a laminated body is viewed from above, the laminated portion of the copper foil with a carrier or a laminated body (a laminated portion of a carrier and an extremely thin copper layer, or a copper foil with a carrier) At least a part of the outer periphery of the laminated layer with another copper foil with a carrier) may be covered with a resin or a prepreg. Moreover, the laminated body (laminated body A) formed by the manufacturing method of the said coreless board | substrate can also be comprised so that a pair of copper foil with a carrier may be contacted separately from each other. In addition, when the copper foil with a carrier is viewed from the top, it can also be spread over the copper foil with a carrier or a laminate (a laminate of a carrier and an ultra-thin copper layer, or a laminate of one copper foil with a carrier and another copper foil with a carrier). The entire periphery of the part) or the entire surface of the laminated part is covered with resin or prepreg. In addition, it is preferable that the resin or the prepreg is larger than the copper foil or the laminated body or the laminated part of the laminated body when viewed from the top, and is preferably set as a laminated body having a two-area layer on the copper foil or the laminated body with the carrier. Resin or prepreg, and the resin or prepreg is used to wrap (enclose) the copper foil with carrier or laminate. With such a configuration, when the copper foil with a carrier or a laminated body is viewed from above, the laminated portion of the copper foil with a carrier or a laminated body is covered with a resin or a prepreg, which can prevent other parts from hitting the part from a direction from the side. The lateral direction, that is, the lamination direction, can reduce the peeling between the carrier and the ultra-thin copper layer or the copper foil with the carrier during the process. In addition, by covering with a resin or a prepreg so that the outer periphery of the laminated portion of the copper foil with the carrier or the laminated body is not exposed, it is possible to prevent the chemical solution from penetrating into the laminated portion in the chemical solution processing step as described above. Interface to prevent corrosion or erosion of copper foil with carrier. In addition, when one copper foil with a carrier is separated from a pair of copper foils with a carrier of the laminated body, or when a copper foil with a carrier is separated from a copper foil (a very thin copper layer), The laminated part of the copper foil with the carrier or the laminated body (the laminated part of the carrier and the ultra-thin copper layer, or the laminated part of the copper foil with the carrier and the other copper foil with the carrier) is firmly adhered by resin, prepreg, etc. In some cases, it is necessary to remove the laminated portion by cutting or the like.
也可以將本發明的附載體銅箔從載體側或極薄銅層側積層於另一個本發明的附載體銅箔的載體側或極薄銅層側而構成積層體。另外,也可以將上述一個附載體銅箔的上述載體側表面或上述極薄銅層側表面與上述另一個附載體銅箔的上述載體側表面或上述極薄銅層側表面視需要經由接著劑直接積層而獲得積層體。另外,也可以將上述一個附載體銅箔的載體或極薄銅層與上述另一個附載體銅箔的載體或極薄銅層接合。這裡,在載體或極薄銅層具有表面處理層的情況下,該“接合”也包括隔著該表面處理層而相互接合的形態。另外,也可利用樹脂來覆蓋該積層體的端面的一部分或全部。 The copper foil with a carrier of the present invention may be laminated on the carrier side or the ultra-thin copper layer side of another copper foil with a carrier from the carrier side or the ultra-thin copper layer side to form a laminated body. In addition, the carrier-side surface or the ultra-thin copper layer side surface of the one copper foil with a carrier and the carrier-side surface or the ultra-thin copper layer side surface of the other copper foil with a carrier may be passed through an adhesive as necessary. Laminated directly to obtain a laminated body. In addition, the carrier or the ultra-thin copper layer of the one copper foil with a carrier may be bonded to the carrier or the ultra-thin copper layer of the other copper foil with a carrier. Here, in the case where the carrier or the ultra-thin copper layer has a surface-treated layer, the “bonding” also includes a form in which they are bonded to each other via the surface-treated layer. In addition, a part or all of the end face of the laminated body may be covered with a resin.
載體彼此、極薄銅層彼此、載體與極薄銅層、附載體銅箔彼此的積層除了單純地重疊以外,例如還可以藉由以下方法進行。 The lamination of the carriers, the ultra-thin copper layer, the carrier and the ultra-thin copper layer, and the copper foil with the carrier can be performed by the following method, for example, in addition to simply overlapping them.
(a)冶金接合方法:熔焊(弧焊、TIG(Tungsten Inert Gas,鎢-惰性氣體)焊接、MIG(Metal inert gas,金屬-惰性氣體)焊接、電阻焊接、縫焊接、點焊接)、壓接(超音波焊接、摩擦攪拌焊接)、軟焊及硬焊;(b)機械接合方法:嵌縫、利用鉚釘的接合(利用自鉚接(Self-piercing Rivet)的接合、利用鉚釘的接合)、釘箱機;(c)物理接合方法:接著劑、(雙面)膠帶 (a) Metallurgical joining methods: fusion welding (arc welding, TIG (Tungsten Inert Gas) welding, MIG (Metal inert gas) welding, resistance welding, seam welding, spot welding), pressure Welding (ultrasonic welding, friction stir welding), soft welding and brazing; (b) mechanical joining methods: caulking, joining by rivets (joining by Self-piercing Rivet, joining by rivets), Nail box machine; (c) Physical bonding method: adhesive, (double-sided) tape
藉由使用上述接合方法將一載體的一部分或全部與另一載體的一部分或全部或極薄銅層的一部分或全部接合,而將一載體與另一載體或極薄銅層積層,從而能夠製造使載體彼此或載體與極薄銅層可分離地接觸而構成的積層體。在一載體與另一載體或極薄銅層較弱接合地將一載體與另一載體或極薄銅層積層的情況下,即便不去除一載體與另一載體或極薄銅層的接合部,也能夠將一載體與另一載體或極薄銅層分離。另外,在一載體與另一載體或極薄銅層牢固地接合的情況下,藉由利用切斷或化學研磨(蝕刻等)、機械研磨等去除一載體與另一載體或極薄銅層接合的部位,能夠將一載體與另一載體或極薄銅層分離。 A carrier can be laminated with another carrier or an ultra-thin copper layer by joining a part or all of one carrier with a part or all of another carrier or a part or all of an ultra-thin copper layer by using the above-mentioned bonding method, thereby enabling manufacture A laminated body formed by detachably contacting the carriers or the carrier with the ultra-thin copper layer. In the case of laminating a carrier with another carrier or an ultra-thin copper layer with a weak junction between one carrier and another carrier or an ultra-thin copper layer, even if the joint between one carrier and another carrier or the ultra-thin copper layer is not removed It is also possible to separate one carrier from another carrier or an extremely thin copper layer. In addition, in the case where one carrier is firmly bonded to another carrier or an ultra-thin copper layer, the one carrier is bonded to another carrier or an ultra-thin copper layer by removing by cutting or chemical polishing (etching, etc.), mechanical polishing, or the like. Can separate one carrier from another carrier or a very thin copper layer.
另外,藉由實施如下所述之步驟,可製作無芯的印刷配線板,該步驟為:在以這種方式構成的積層體上至少進行一次設置樹脂層與電路這兩層的步驟、及至少進行一次形成上述樹脂層及電路這兩層後從上述積層體的附載體銅箔剝離上述極薄銅層或載體的步驟。此外,也可以在該積層體的一表面或兩表面設置樹脂層與電路這兩層。 In addition, a coreless printed wiring board can be produced by performing the following steps: the step of providing the resin layer and the circuit with the two layers of the laminated body configured in this manner at least once, and at least once A step of peeling the ultra-thin copper layer or the carrier from the copper foil with a carrier of the laminated body after forming the two layers of the resin layer and the circuit at a time is performed. In addition, two layers of a resin layer and a circuit may be provided on one surface or both surfaces of the laminated body.
上述積層體所使用的樹脂基板、樹脂層、樹脂、預浸料可以是本說明書所記載的樹脂層,也可以含有本說明書所記載的樹脂層所使用的樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體、反應催化劑、交聯劑、聚合物、預浸料、骨架材等。此外,上述附載體銅箔或積層體在俯視時也可以小於樹脂或預浸料或樹脂基板或樹脂層。 The resin substrate, resin layer, resin, and prepreg used in the laminated body may be the resin layer described in this specification, or may contain the resin, resin hardener, compound, and hardening accelerator used in the resin layer described in this specification. Agents, dielectrics, reaction catalysts, crosslinkers, polymers, prepregs, framework materials, etc. In addition, the copper foil or laminate with a carrier may be smaller than a resin or a prepreg, a resin substrate, or a resin layer in a plan view.
另外,樹脂基板只要具有能夠應用於印刷配線板等的特性, 那麼就不受特別限制,例如,用於剛性PWB時,可以使用紙基材酚樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂、及玻璃布基材環氧樹脂等,用於FPC時,可以使用聚酯膜或聚醯亞胺膜、LCP(液晶聚合物)膜、氟樹脂等。此外,使用LCP(液晶聚合物)膜或氟樹脂膜的情況與使用聚醯亞胺膜的情況相比,有該膜與表面處理銅箔的剝離強度變小的傾向。因此,在使用LCP(液晶聚合物)膜或氟樹脂膜的情況下,藉由形成銅電路後利用覆蓋層來覆蓋銅電路,能夠使該膜與銅電路不易剝離,從而能夠防止因剝離強度降低引起該膜與銅電路剝離。 In addition, the resin substrate is not particularly limited as long as it has characteristics that can be applied to printed wiring boards. For example, when it is used for rigid PWB, paper substrate phenol resin, paper substrate epoxy resin, and synthetic fiber cloth substrate can be used. Epoxy resin, glass cloth-paper composite substrate epoxy resin, glass cloth-glass non-woven composite substrate epoxy resin, and glass cloth substrate epoxy resin, etc. When used in FPC, polyester film or polymer can be used.醯 imine film, LCP (liquid crystal polymer) film, fluororesin, etc. In addition, when a LCP (liquid crystal polymer) film or a fluororesin film is used, the peeling strength of the film and the surface-treated copper foil tends to be smaller than when a polyimide film is used. Therefore, when an LCP (liquid crystal polymer) film or a fluororesin film is used, the copper circuit is covered with a cover layer after the copper circuit is formed, so that the film and the copper circuit cannot be easily peeled off, and a reduction in peel strength can be prevented This caused the film to peel from the copper circuit.
[實施例] [Example]
以下,基於實施例及比較例進行說明。此外,本實施例僅為一例,並不僅限制於該例。即,也包含本發明所包含的其它形態或變化。 Hereinafter, it demonstrates based on an Example and a comparative example. In addition, this embodiment is only an example, and is not limited to this example. That is, other aspects and changes included in the present invention are also included.
實施例1~2、4~6、9~16及比較例1~2、4、6~7的原箔使用厚度12μm的標準壓延銅箔TPC(JIS H3100 C1100所規範的精銅,JX金屬製造,表面的十點平均粗糙度Rz=0.7μm)。實施例3、8及比較例3、5的原箔使用厚度12μm的電解銅箔(JX金屬製造HLP箔,析出面(M面)的表面的十點平均粗糙度Rz=0.7μm),在析出面(M面)設置表面處理層。 The original foils of Examples 1 ~ 2, 4 ~ 6, 9 ~ 16 and Comparative Examples 1 ~ 2, 4, 6 ~ 7 are made of standard rolled copper foil TPC (thick copper specified by JIS H3100 C1100, JX metal) with a thickness of 12 μm. , The ten-point average roughness of the surface Rz = 0.7 μm). The original foils of Examples 3 and 8 and Comparative Examples 3 and 5 were electrolytic copper foils (HLP foils made of JX Metal, the ten-point average roughness Rz = 0.7 μm of the surface of the precipitation surface (M surface)) of 12 μm. The surface (M surface) is provided with a surface treatment layer.
另外,實施例7及比較例8的原箔使用藉由以下方法所製造的附載體銅箔。 In addition, as the original foil of Example 7 and Comparative Example 8, a copper foil with a carrier manufactured by the following method was used.
實施例7是準備厚度18μm的電解銅箔(JX金屬製造JTC箔)作為載體,比較例8是準備上述厚度18μm的標準壓延銅箔TPC作為載體。然後,在下述條件下,在載體的表面形成中間層,在中間層的表面形成極薄銅層。 此外,在載體為電解銅箔的情況下,在光澤面(S面)形成中間層。 In Example 7, an electrolytic copper foil (JTC foil manufactured by JX Metal) having a thickness of 18 μm was prepared as a carrier, and Comparative Example 8 was preparing a standard rolled copper foil TPC having a thickness of 18 μm as a carrier. Then, under the following conditions, an intermediate layer was formed on the surface of the carrier, and an extremely thin copper layer was formed on the surface of the intermediate layer. When the carrier is an electrolytic copper foil, an intermediate layer is formed on a glossy surface (S surface).
‧實施例7、比較例8 ‧Example 7, Comparative Example 8
<中間層> <Middle layer>
(1)Ni層(Ni鍍層) (1) Ni layer (Ni plating)
藉由在以下條件下利用輥對輥型的連續鍍覆線進行電鍍而在載體形成附著量為1000μg/dm2的Ni層。具體的鍍覆條件如下所述。 An Ni layer having an adhesion amount of 1000 μg / dm 2 was formed on the carrier by electroplating using a roll-to-roll continuous plating line under the following conditions. Specific plating conditions are as follows.
硫酸鎳:270~280g/L Nickel sulfate: 270 ~ 280g / L
氯化鎳:35~45g/L Nickel chloride: 35 ~ 45g / L
乙酸鎳:10~20g/L Nickel acetate: 10 ~ 20g / L
硼酸:30~40g/L Boric acid: 30 ~ 40g / L
光澤劑:糖精、丁炔二醇等 Luster: Saccharin, butynediol, etc.
十二烷基硫酸鈉:55~75ppm Sodium lauryl sulfate: 55 ~ 75ppm
pH值:4~6 pH value: 4 ~ 6
液溫:55~65℃ Liquid temperature: 55 ~ 65 ℃
電流密度:10A/dm2 Current density: 10A / dm 2
(2)Cr層(電解鉻酸鹽處理) (2) Cr layer (electrolytic chromate treatment)
其次,對由(1)形成的Ni層表面進行水洗及酸洗後,接著,藉由在輥對輥型的連續鍍覆線上在以下條件下進行電解鉻酸鹽處理而使附著量為11μg/dm2的Cr層附著於Ni層上。 Next, after the surface of the Ni layer formed by (1) was washed with water and pickled, an electrolytic chromate treatment was performed on the roll-to-roll continuous plating line under the following conditions so that the adhesion amount was 11 μg / The Cr layer of dm 2 is attached to the Ni layer.
重鉻酸鉀1~10g/L、鋅0g/L Potassium dichromate 1 ~ 10g / L, zinc 0g / L
pH值:7~10 pH value: 7 ~ 10
液溫:40~60℃ Liquid temperature: 40 ~ 60 ℃
電流密度:2A/dm2 Current density: 2A / dm 2
<極薄銅層> <Ultra-thin copper layer>
其次,對由(2)形成的Cr層表面進行水洗及酸洗後,接著,藉由在輥對輥型的連續鍍覆線上在以下條件下進行電鍍而在Cr層上形成厚度1.5μm的極薄銅層,製作附載體銅箔。 Next, after the surface of the Cr layer formed in (2) was washed with water and pickled, a 1.5 μm-thick electrode was formed on the Cr layer by electroplating on a roll-to-roll continuous plating line under the following conditions. Thin copper layer to make copper foil with carrier.
銅濃度:90~110g/L Copper concentration: 90 ~ 110g / L
硫酸濃度:90~110g/L Sulfuric acid concentration: 90 ~ 110g / L
氯化物離子濃度:50~90ppm Chloride ion concentration: 50 ~ 90ppm
整平劑1(雙(3-磺丙基)二硫醚):10~30ppm Leveling agent 1 (bis (3-sulfopropyl) disulfide): 10 ~ 30ppm
整平劑2(胺化合物):10~30ppm Leveling agent 2 (amine compound): 10 ~ 30ppm
此外,使用下述胺化合物作為整平劑2。 In addition, the following amine compound was used as the leveling agent 2.
(上述化學式中,R1及R2選自由羥基烷基、醚基、芳基、芳香族取代烷基、不飽和烴基、烷基所組成的群) (In the above chemical formula, R 1 and R 2 are selected from the group consisting of a hydroxyalkyl group, an ether group, an aryl group, an aromatic substituted alkyl group, an unsaturated hydrocarbon group, and an alkyl group)
電解液溫度:50~80℃ Electrolyte temperature: 50 ~ 80 ℃
電流密度:100A/dm2 Current density: 100A / dm 2
電解液線速度:1.5~5m/sec Linear speed of electrolyte: 1.5 ~ 5m / sec
接下來,在壓延銅箔、電解銅箔或附載體銅箔的極薄銅層表面,在表1~3所示的條件範圍下形成一次粒子層或一次粒子層及二次粒子層。表1的一次粒子電流條件欄中記載了兩個電流條件、庫侖量的例子意味著在左邊記載的條件下進行鍍覆後,在右邊記載的條件下進一步進行鍍覆。例如,在實施例1的一次粒子電流條件欄中記載了“(50A/dm2、65As/dm2)+(8A/dm2、16As/dm2)”,這表示將形成一次粒子的電流密度設為50A/dm2、將庫侖量設為65As/dm2進行鍍覆後,進而將形成一次粒子的電流密度設為8A/dm2,將庫侖量設為16As/dm2進行鍍覆。 Next, a primary particle layer, a primary particle layer, and a secondary particle layer were formed on the surface of the ultra-thin copper layer of the rolled copper foil, electrolytic copper foil, or copper foil with a carrier under the conditions shown in Tables 1-3. Examples of the two current conditions and the coulomb amount are listed in the column of the primary particle current conditions in Table 1. It means that after plating under the conditions described on the left, plating is performed under the conditions described on the right. For example, "(50A / dm 2 , 65As / dm 2 ) + (8A / dm 2 , 16As / dm 2 )" is described in the column of the primary particle current conditions in Example 1, which indicates the current density at which primary particles will be formed. After plating was performed at 50 A / dm 2 and the coulomb amount was 65 As / dm 2 , the current density for forming primary particles was 8 A / dm 2 , and the coulomb amount was 16 As / dm 2 for plating.
接下來,在一次粒子層上、或當形成著二次粒子層時在二次粒子層上以表1、4所示的條件範圍形成被覆鍍層。此外,在被覆鍍覆的欄中記載進行了多個處理的情況下,意味著從左側的處理開始依次進行。例如,在實施例2中,表1中在“被覆鍍覆條件(表4的被覆鍍覆液)”的欄中記載了“(2)Ni-Mo+(1)Zn-Cr”,在“被覆鍍覆通電時間(秒)”的欄中記載了“(2)0.17、(1)1.0”。這意味著在實施例2中,以表4的(2)Ni-Mo鍍覆、(1)Zn-Cr鍍覆的順序進行被覆鍍覆,並將其通電時間分別設為(2)Ni-Mo鍍覆0.17秒,(1)Zn-Cr鍍覆1.0秒。 Next, a coating layer is formed on the primary particle layer or on the secondary particle layer under the conditions shown in Tables 1 and 4 when the secondary particle layer is formed. It should be noted that when a plurality of processes are performed in the column for coating, it means that the processes from the left side are sequentially performed. For example, in Example 2, "(2) Ni-Mo + (1) Zn-Cr" is described in the column of "Coating plating conditions (Coating plating liquid of Table 4)" in Table 1, and "Coating "(2) 0.17, (1) 1.0" is described in the column of "Plating current (second)". This means that in Example 2, the coating plating was performed in the order of (2) Ni-Mo plating and (1) Zn-Cr plating in Table 4, and the conduction times were set to (2) Ni- Mo plating was 0.17 seconds, and (1) Zn-Cr plating was 1.0 seconds.
<一次粒子層及二次粒子層及被覆鍍層以外的表面處理層> <Surface treatment layer other than primary particle layer, secondary particle layer, and coating plating layer>
形成被覆鍍層後,對實施例3、5、比較例6進行以下電解鉻酸鹽處理。對除此以外的實施例、比較例不進行以下電解鉻酸鹽處理。 After the coating plating layer was formed, Examples 3, 5 and Comparative Example 6 were subjected to the following electrolytic chromate treatment. The following Examples and Comparative Examples were not subjected to the following electrolytic chromate treatment.
‧電解鉻酸鹽處理 ‧Electrolytic chromate treatment
液體組成:重鉻酸鉀1~1g/L Liquid composition: potassium dichromate 1 ~ 1g / L
液溫:40~60℃ Liquid temperature: 40 ~ 60 ℃
pH值:0.5~10 pH value: 0.5 ~ 10
電流密度:0.01~2.6A/dm2 Current density: 0.01 ~ 2.6A / dm 2
通電時間:0.05~30秒 Power-on time: 0.05 ~ 30 seconds
其後,對實施例3~5、10進行以下使用了二胺基矽烷的矽烷偶合處理。 Thereafter, Examples 3 to 5 and 10 were subjected to the following silane coupling treatment using diaminosilane.
‧矽烷偶合處理 ‧Silane coupling treatment
矽烷偶合劑:N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷 Silane coupling agent: N-2- (aminoethyl) -3-aminopropyltrimethoxysilane
矽烷偶合劑濃度:0.5~1.5vol% Silane coupling agent concentration: 0.5 ~ 1.5vol%
處理溫度:20~70℃ Processing temperature: 20 ~ 70 ℃
處理時間:0.5~5秒 Processing time: 0.5 ~ 5 seconds
(十點平均粗糙度Rz的測定) (Measurement of ten-point average roughness Rz)
依照JIS B0601-1982,使用小阪研究所股份有限公司製造的接觸粗糙度計Surfcorder SE-3C觸針式粗度計,測定粗化處理層側表面的表面粗糙度Rz(十點平均粗糙度)。在任意10處測定Rz,將該Rz的10處的平均值設為Rz值。 In accordance with JIS B0601-1982, a surface roughness Rz (ten-point average roughness) of the surface of the roughened layer was measured using a Surfcorder SE-3C stylus type roughness meter manufactured by Kosaka Research Co., Ltd. The Rz was measured at any 10 points, and the average value of the 10 Rz values was set as the Rz value.
(傳輸損耗的測定) (Measurement of transmission loss)
對於各樣品,與液晶聚合物樹脂基板(Kuraray股份有限公司製造的Vecstar CTZ-厚度50μm,作為羥基苯甲酸(酯)與羥基萘甲酸(酯)的共聚物的樹脂)貼合後,藉由蝕刻以特性阻抗成為50Ω的方式形成微帶電路,使用HP公司製造的網路分析儀N5247A測定透過係數,求出頻率20GHz下的傳輸損耗。作為頻率20GHz下的傳輸損耗的評價,將4.0dB/10cm以下設為○,將4.1dB/10cm以上設為×。 Each sample was bonded to a liquid crystal polymer resin substrate (Vecstar CTZ manufactured by Kuraray Co., Ltd., a thickness of 50 μm, and a resin that is a copolymer of hydroxybenzoic acid (ester) and hydroxynaphthoic acid (ester)), followed by etching. A microstrip circuit was formed so that the characteristic impedance became 50 Ω. The transmission coefficient was measured using a network analyzer N5247A manufactured by HP, and the transmission loss at a frequency of 20 GHz was obtained. As the evaluation of the transmission loss at a frequency of 20 GHz, 4.0 dB / 10 cm or less was ○, and 4.1 dB / 10 cm or more was X.
(剝離強度的測定) (Measurement of peeling strength)
將銅箔的表面處理面與表2所記載的樹脂基板藉由熱壓貼合而製作覆銅積層板,使用一般的氯化銅電路蝕刻液,製作10mm寬的電路,將銅箔從基板剝離,一邊向90°方向拉伸一邊測定初始剝離強度。另外,將所製作的電路投入到180℃的大氣下的烘箱中,10天後取出,與常態剝離同樣地一邊向90°方向拉伸,一邊測定加熱後的剝離強度。剝離強度的評價是將初始剝離強度為0.5kg/cm以上、且加熱後剝離強度為0.3kg/cm以上的情況設為○,將初始剝離強度小於0.5kg/cm或加熱後剝離強度小於0.3kg/cm的情況設為×。 A copper-clad laminated board was prepared by bonding the surface of the copper foil to the resin substrate described in Table 2 by hot pressing, and a common copper chloride circuit etching solution was used to produce a 10 mm wide circuit. The copper foil was peeled from the substrate. The initial peel strength was measured while being stretched in the 90 ° direction. In addition, the produced circuit was put into an oven under an atmosphere of 180 ° C., and was taken out after 10 days, and the peel strength after heating was measured while being stretched in the direction of 90 ° in the same manner as normal peeling. The evaluation of the peeling strength was performed when the initial peeling strength was 0.5 kg / cm or more and the peeling strength after heating was 0.3 kg / cm or more. The initial peeling strength was less than 0.5 kg / cm or the peeling strength after heating was less than 0.3 kg. In the case of / cm, it is set to x.
另外,關於表2所記載的積層樹脂,“LCP”為液晶聚合物,“低介電PI”為低介電聚醯亞胺,“PTFE”為聚四氟乙烯。 In addition, regarding the laminated resin described in Table 2, "LCP" is a liquid crystal polymer, "low dielectric PI" is a low dielectric polyfluorene, and "PTFE" is polytetrafluoroethylene.
將液晶聚合物樹脂即Kuraray公司製造的vecstor CT-Z用於液晶聚合物,該液晶聚合物樹脂是羥基苯甲酸(酯)與羥基萘甲酸(酯)的共聚物。 A liquid crystal polymer resin, vecstor CT-Z manufactured by Kuraray, was used for the liquid crystal polymer, and the liquid crystal polymer resin was a copolymer of hydroxybenzoic acid (ester) and hydroxynaphthoic acid (ester).
低介電聚醯亞胺使用介電損耗因數的值為0.002的聚醯亞胺。此外,在本說明書中,將介電損耗因數的值為0.01以下的聚醯亞胺設為低介電聚醯亞胺。介電損耗因數能夠藉由一般社團法人日本電子電路工業會的《印刷配線板用覆銅積層板試驗方法相對介電常數及介電損耗因數》JPCA-TM001-2007所記載的三板共振器法來測定。 As the low-dielectric polyimide, a polyimide having a dielectric loss factor of 0.002 is used. In this specification, a polyimide having a dielectric loss factor value of 0.01 or less is referred to as a low-dielectric polyimide. The dielectric loss factor can be obtained by the three-plate resonator method described in "Specific permittivity and dielectric loss factor of copper clad laminated board test methods for printed wiring boards" by the Japan Electronic Circuits Association, JPCA-TM001-2007. Determination.
此外,上述銅箔與樹脂基板的熱壓條件如下所述。 The hot-pressing conditions of the copper foil and the resin substrate are as follows.
在將液晶聚合物設為樹脂基板的情況下:壓力3.5MPa,加熱溫度300℃,加熱時間10分鐘 When the liquid crystal polymer is a resin substrate: a pressure of 3.5 MPa, a heating temperature of 300 ° C, and a heating time of 10 minutes
在將低介電聚醯亞胺設為樹脂基板的情況下:壓力4MPa,加熱溫度 360℃,加熱時間5分鐘 When using a low-dielectric polyfluorene imide as the resin substrate: pressure 4 MPa, heating temperature 360 ° C, heating time 5 minutes
在將聚四氟乙烯設為樹脂基板的情況下:壓力5MPa,加熱溫度350℃,加熱時間30分鐘 When using polytetrafluoroethylene as the resin substrate: pressure 5MPa, heating temperature 350 ° C, heating time 30 minutes
上述樹脂基材的厚度為50μm。 The thickness of the resin substrate was 50 μm.
將上述製造條件及評價結果表示在表1~4中。 The manufacturing conditions and evaluation results are shown in Tables 1 to 4.
(評價結果) (Evaluation results)
實施例1~16均很好地抑制傳輸損耗,剝離強度也良好。 In Examples 1 to 16, the transmission loss was well suppressed, and the peeling strength was also good.
比較例1、6的表面處理層中的Zn的附著量小於150μg/dm2,進而,表面處理層中的Zn及Mo的合計附著量小於200μg/dm2,剝離強度不良。 The adhesion amount of Zn in the surface-treated layers of Comparative Examples 1 and 6 was less than 150 μg / dm 2. Furthermore, the total adhesion amount of Zn and Mo in the surface-treated layer was less than 200 μg / dm 2 , and the peeling strength was poor.
比較例2的表面處理層中的Co的附著量超過3000μg/dm2,因此傳輸損耗不良。 The adhesion amount of Co in the surface-treated layer of Comparative Example 2 exceeded 3000 μg / dm 2 , and thus the transmission loss was poor.
比較例3、8的表面處理層最表面的十點平均粗糙度Rz超過1.5μm,因此傳輸損耗不良。 The ten-point average roughness Rz of the outermost surface of the surface-treated layers of Comparative Examples 3 and 8 exceeded 1.5 μm, and therefore the transmission loss was poor.
比較例4沒有形成一次粒子層及二次粒子層,剝離強度不良。 In Comparative Example 4, the primary particle layer and the secondary particle layer were not formed, and the peeling strength was poor.
比較例5的表面處理層中的Zn的附著量小於150μg/dm2,另外,Zn及Mo的合計附著量小於200μg/dm2,進而,表面處理層最表面的十點平均粗糙度Rz超過1.5μm,因此傳輸損耗及剝離強度不良。 The adhesion amount of Zn in the surface treatment layer of Comparative Example 5 was less than 150 μg / dm 2 , and the total adhesion amount of Zn and Mo was less than 200 μg / dm 2. Furthermore, the ten-point average roughness Rz of the outermost surface of the surface treatment layer exceeded 1.5 μm, the transmission loss and peel strength are poor.
比較例7在表面處理層含有Ni,但該Ni的附著量超過800μg/dm2,因此傳輸損耗不良。 Comparative Example 7 contains Ni in the surface-treated layer, but the adhesion amount of Ni exceeds 800 μg / dm 2 , so the transmission loss is poor.
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| JP2017205410A JP7409760B2 (en) | 2016-12-05 | 2017-10-24 | Method for manufacturing surface-treated copper foil, copper foil with carrier, laminate, printed wiring board, and manufacturing method for electronic equipment |
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| WO2020158604A1 (en) * | 2019-01-30 | 2020-08-06 | Agc株式会社 | Laminate, method for producing same, method for producing composite laminate, and method for producing polymer film |
| JP7300976B2 (en) * | 2019-12-13 | 2023-06-30 | Jx金属株式会社 | Surface treated copper foil, copper clad laminate and printed wiring board |
| JP2021095596A (en) * | 2019-12-13 | 2021-06-24 | Jx金属株式会社 | Surface-treated copper foil, copper-clad laminate, and printed wiring board |
| WO2022014647A1 (en) * | 2020-07-16 | 2022-01-20 | 三井金属鉱業株式会社 | Manufacturing methods for copper-clad laminate and printed wiring board |
| KR20230038643A (en) | 2020-07-16 | 2023-03-21 | 미쓰이금속광업주식회사 | Copper Clad Laminate and Printed Wiring Board |
| KR102789764B1 (en) * | 2021-12-22 | 2025-04-03 | 롯데에너지머티리얼즈 주식회사 | Surface-treated copper foil with heat resistance, copper clad laminate comprising the same, and printed wiring board comprising the same |
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| TW511408B (en) * | 2000-09-18 | 2002-11-21 | Nippon Denkai Kk | Method of producing copper foil for fine wiring |
| CN1217564C (en) * | 2001-05-14 | 2005-08-31 | 日本电解株式会社 | Roughened copper foil and making method thereof |
| JP4161304B2 (en) | 2003-02-04 | 2008-10-08 | 古河サーキットフォイル株式会社 | Metal foil for high frequency circuits |
| JP2004244656A (en) * | 2003-02-12 | 2004-09-02 | Furukawa Techno Research Kk | Copper foil for high frequency applications and its manufacturing method |
| JP4704025B2 (en) | 2004-12-21 | 2011-06-15 | Jx日鉱日石金属株式会社 | Roughening rolled copper foil for high frequency circuit and method for producing the same |
| JP5885054B2 (en) * | 2010-04-06 | 2016-03-15 | 福田金属箔粉工業株式会社 | A treated copper foil for a copper clad laminate, a copper clad laminate obtained by bonding the treated copper foil to an insulating resin substrate, and a printed wiring board using the copper clad laminate. |
| SG183311A1 (en) * | 2010-05-07 | 2012-09-27 | Jx Nippon Mining & Metals Corp | Copper foil for printed circuit |
| JP5204908B1 (en) * | 2012-03-26 | 2013-06-05 | Jx日鉱日石金属株式会社 | Copper foil with carrier, method for producing copper foil with carrier, copper foil with carrier for printed wiring board and printed wiring board |
| US10070521B2 (en) * | 2012-03-29 | 2018-09-04 | Jx Nippon Mining & Metals Corporation | Surface-treated copper foil |
| JP5362922B1 (en) * | 2012-10-12 | 2013-12-11 | Jx日鉱日石金属株式会社 | Surface-treated copper foil and laminate using the same |
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| JP5758033B2 (en) * | 2013-08-20 | 2015-08-05 | Jx日鉱日石金属株式会社 | Surface-treated copper foil, laminate using the same, printed wiring board, electronic device, and method for manufacturing printed wiring board |
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| JP6591766B2 (en) * | 2014-04-24 | 2019-10-16 | Jx金属株式会社 | Copper foil with carrier, printed wiring board, laminate, electronic device and method for manufacturing printed wiring board |
| JP2015105440A (en) * | 2014-11-21 | 2015-06-08 | Jx日鉱日石金属株式会社 | Surface-treated copper foil, laminated board, printed wiring board, printed circuit board, and electronic equipment |
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