TW201820409A - Developing device, substrate processing device, developing method, and substrate processing method - Google Patents

Abstract

A metal-containing coating film is formed on one surface of the substrate, an organic coating film is formed on the metal-containing coating film using a light-sensitive organic material; and the organic coating film is exposed to a prescribed pattern. A developer is fed by a slit nozzle onto the organic coating film, whereby the prescribed pattern is formed on the organic coating film. A substitution solution is fed by a substitution nozzle onto the metal-containing coating film and the pattern of the organic coating film, whereby the metal-containing coating film portion is removed and the prescribed pattern is formed on the metal-containing coating film. A rinsing solution is fed by a rinsing nozzle onto the substrate having the pattern of the organic coating film and the pattern of the metal-containing coating film.

Description

   Developing device, substrate processing device, developing method, and substrate processing method   

The present invention relates to a developing device, a substrate processing device, a developing method, and a substrate processing method for developing a substrate.

In a lithography process in the manufacture of a semiconductor device or the like, a coating film is formed by supplying a coating liquid such as a resist liquid on a substrate. After the coating film is exposed, a predetermined pattern is formed on the coating film by development. The substrate after the coating film is patterned is subjected to a rinse process. Here, when the thickness of the pattern of the coating film is large and the width is small, the pattern may collapse due to the surface tension of the cleaning liquid during the cleaning process (for example, see Patent Documents 1 and 2).

Patent Document 1 describes that mixing of isopropyl alcohol into the cleaning solution reduces the surface tension of the cleaning solution and prevents the pattern from collapsing. Patent Document 2 describes that after washing treatment, a fluorine-based inert liquid having a specific gravity of 1.5 or more and a surface tension of 20 dyns / cm or less is replaced with a cleaning liquid to prevent the pattern from collapsing.

[Prior technical literature]

[Patent Literature]

Patent Document 1: Japanese Unexamined Patent Publication No. 7-122485.

Patent Document 2: Japanese Patent Application Laid-Open No. 9-82629.

In recent years, the integration of wafers formed on substrates has continued to progress. In this case, as the pattern width of the coating film is miniaturized, the pattern collapses and the yield is easily reduced. Therefore, it is sought to prevent the collapse of the pattern more reliably.

An object of the present invention is to provide a developing device, a substrate processing device, a developing method, and a substrate processing method capable of preventing the pattern of the coating film from being collapsed.

(1) A developing device according to an aspect of the present invention is used for developing a substrate, and a film containing a metal-containing coating solution is formed on one surface of the substrate as a metal-containing coating film, and the metal-containing coating is applied to the substrate. A first organic coating film is formed on the film. The first organic coating film is formed of a photosensitive organic material and is exposed to a predetermined pattern. The developing device includes a developing solution supply unit, The developing solution is supplied to the first organic coating film to form a first organic coating film pattern having a predetermined pattern. The first removing liquid supply unit supplies a first removing liquid for removing metal to the first organic coating. A cloth film pattern and a metal-containing coating film, thereby forming a metal-containing coating film pattern having a predetermined pattern; and a cleaning liquid supply unit that supplies the cleaning liquid to the first organic coating film pattern and the metal-containing coating film Patterned substrate.

A metal-containing coating film is formed on one surface of the substrate, a first organic coating film is formed on the metal-containing coating film with a photosensitive organic material, and the first organic coating film is exposed to a predetermined pattern. In this developing device, a developing solution is supplied to the first organic coating film by a developing solution supply unit. Thereby, the first organic coating film is developed, and a first organic coating film pattern having a predetermined pattern is formed. The first removal liquid is supplied to the first organic coating film pattern and the metal-containing coating film by the first removal liquid supply unit. Thereby, a part of the metal-containing coating film exposed from the first organic coating film pattern is removed, and a metal-containing coating film pattern having a predetermined pattern is formed. Thereafter, the cleaning liquid is supplied to the substrate having the first organic coating film pattern and the metal-containing coating film pattern by the cleaning liquid supply unit.

According to this configuration, the substrate on which the first organic coating film pattern and the metal-containing coating film pattern are formed can be washed with the cleaning liquid. Here, the bonding force of the metal-containing coating film pattern to the substrate is greater than the bonding force of the first organic coating film pattern to the substrate. Therefore, the pattern of the metal-containing coating film can remain without collapse even when a large surface tension is applied. Therefore, even in a case where the first organic coating film pattern is collapsed due to the surface tension of the cleaning solution during the cleaning, the metal-containing coating film pattern can be prevented from being collapsed.

(2) The first removal liquid may contain an aqueous solution, an alkaline aqueous solution, or an acidic aqueous solution to which a chelating agent is added. In this case, a part of the metal-containing coating film can be easily removed.

(3) The chelating agent may contain organic acids, salts of organic acids, amino acids, amino acid derivatives, inorganic bases, salts of inorganic bases, alkylamines, derivatives of alkylamines, alkanolamines, and paraffinic acids. One or more selected from the group consisting of alcohol amine derivatives. In this case, the portion of the metal-containing coating film can be easily removed.

(4) A developing device according to another aspect of the present invention is for developing a substrate, and a metal-containing coating liquid is formed on one surface of the substrate as a metal-containing coating film, and the metal-containing coating is applied to the substrate. A first organic coating film is formed on the cloth film. The first organic coating film is formed of a photosensitive organic material and is exposed to a predetermined pattern. The developing device includes a first removing liquid supply unit. A first removal solution for removing metal is supplied to the first organic coating film and the metal-containing coating film, thereby forming a first organic coating film pattern having a predetermined pattern and a metal-containing coating having a predetermined pattern. A film pattern; and a cleaning liquid supply unit that supplies the cleaning liquid to a substrate having a first organic coating film pattern and a metal-containing coating film pattern.

A metal-containing coating film is formed on one surface of the substrate, a first organic coating film is formed on the metal-containing coating film with a photosensitive organic material, and the first organic coating film is exposed to a predetermined pattern. In this developing device, the first removal liquid is supplied to the first organic coating film and the metal-containing coating film by the first removal liquid supply unit. Thereby, the first organic coating film is developed, and a first organic coating film pattern having a predetermined pattern is formed. In addition, a portion of the metal-containing coating film exposed from the first organic coating film pattern is removed to form a metal-containing coating film pattern having a predetermined pattern. Thereafter, the cleaning liquid is supplied to the substrate having the first organic coating film pattern and the metal-containing coating film pattern by the cleaning liquid supply unit.

According to this configuration, the substrate on which the first organic coating film pattern and the metal-containing coating film pattern are formed can be washed with the cleaning liquid. Here, the bonding force of the metal-containing coating film pattern to the substrate is greater than the bonding force of the first organic coating film pattern to the substrate. Therefore, the pattern of the metal-containing coating film can remain without collapse even when a large surface tension is applied. Therefore, even in a case where the first organic coating film pattern is collapsed due to the surface tension of the cleaning solution during the cleaning, the metal-containing coating film pattern can be prevented from being collapsed.

(5) The first removal solution may contain an alkaline aqueous solution. In this case, the portion of the metal-containing coating film can be easily removed while developing the first organic coating film.

(6) The developing device may further include a rotation holding portion that holds the substrate and rotates the substrate after the cleaning liquid is supplied by the cleaning liquid supply portion. In this case, the substrate to which the cleaning liquid is supplied can be dried in a short time. In addition, since the bonding force between the metal-containing coating film pattern and the substrate is large, even when a centrifugal force is applied to the metal-containing coating film pattern by the rotation of the substrate, the metal-containing coating film pattern can be prevented from being broken.

(7) The developing device may further include a second removal liquid supply unit for supplying the substrate after the first removal liquid is supplied by the first removal liquid supply unit and before the cleaning liquid is supplied by the cleaning liquid supply unit to remove the first substrate. A second removing solution of the organic coating film pattern. In this case, the first organic coating film pattern that becomes unnecessary after the metal-containing coating film pattern is formed can be removed with a simple configuration.

(8) A second organic coating film may be further formed between one surface of the substrate and the metal-containing coating film. In this case, it becomes possible to form the second organic coating film into a predetermined pattern using the formed metal-containing coating film pattern. In addition, by forming the second organic coating film to be thick, a pattern can be formed in which the second organic coating film having a large thickness and a small width can be formed.

(9) The developing device may further include a third removal liquid supply unit for supplying the substrate after the first removal liquid is supplied by the first removal liquid supply unit and before the cleaning liquid is supplied by the cleaning liquid supply unit to remove the first The third removal liquid of the two organic coating films, thereby forming a second organic coating film pattern having a predetermined pattern.

In this case, a portion of the second organic coating film exposed from the metal-containing coating film pattern is removed by the third removal liquid. Thereby, a second organic coating film pattern having a predetermined pattern can be easily formed.

(10) A substrate processing apparatus according to still another aspect of the present invention is disposed adjacent to an exposure apparatus for exposing a substrate. The substrate processing apparatus includes a metal-containing coating film forming section for coating a metal-containing coating. The liquid is supplied as a metal-containing coating liquid to one surface of the substrate, thereby forming a metal-containing coating film on one surface; a first organic coating film forming section is configured to apply a first organic coating formed by a photosensitive material; The liquid is supplied to the metal-containing coating film, thereby forming a first organic coating film on the metal-containing coating film formed by the metal-containing coating film forming portion; The imaging device performs development processing on a substrate in which a first organic coating film formed by the first organic coating film forming portion is exposed to a predetermined pattern by an exposure device.

In this substrate processing apparatus, a metal-containing coating liquid is supplied to one surface of a substrate through a metal-containing coating film forming section. Thereby, a metal-containing coating film is formed on one surface of the substrate. The first organic coating film forming portion supplies a first organic coating liquid formed of a photosensitive material to the metal-containing coating film. Thereby, the first organic coating film is formed on the metal-containing coating film formed by the metal-containing coating film forming section. In the exposure apparatus, the first organic coating film system formed by the first organic coating film forming section is exposed to a predetermined pattern.

In a developing device, a developing solution is supplied to a first organic coating film exposed to a predetermined pattern by a developing solution supply unit. Thereby, the first organic coating film is developed, and a first organic coating film pattern having a predetermined pattern is formed. The first removal liquid is supplied to the first organic coating film pattern and the metal-containing coating film by the first removal liquid supply unit. Thereby, a part of the metal-containing coating film exposed from the first organic coating film pattern is removed, and a metal-containing coating film pattern having a predetermined pattern is formed. Thereafter, the cleaning liquid is supplied to the substrate having the first organic coating film pattern and the metal-containing coating film pattern by the cleaning liquid supply unit.

According to this configuration, the substrate on which the first organic coating film pattern and the metal-containing coating film pattern are formed can be washed with the cleaning liquid. Here, the bonding force of the metal-containing coating film pattern to the substrate is greater than the bonding force of the first organic coating film pattern to the substrate. Therefore, the pattern of the metal-containing coating film can remain without collapse even when a large surface tension is applied. Therefore, even in a case where the first organic coating film pattern is collapsed due to the surface tension of the cleaning solution during the cleaning, the metal-containing coating film pattern can be prevented from being collapsed.

(11) The substrate processing apparatus may further include: a second organic coating film forming section, before forming the metal-containing coating film on one surface of the substrate by the metal-containing coating film forming section, The two organic coating liquids are supplied to one surface of the substrate, and a second organic coating film is formed between the one surface and the metal-containing coating film.

In this case, a second organic coating film is formed between one surface of the substrate and the metal-containing coating film. This makes it possible to form the second organic coating film into a predetermined pattern using the metal-containing coating film pattern. In addition, by forming the second organic coating film to be thick, a pattern of the second organic coating film having a large thickness and a small width can be formed.

(12) A development method according to still another aspect of the present invention is for developing a substrate, and forming a film containing a metal-containing coating solution on one surface of the substrate as a metal-containing coating film, A first organic coating film is formed on the coating film, and the first organic coating film is formed of a photosensitive organic material and is exposed to a predetermined pattern. The developing method includes: supplying by a developing solution. A step of supplying a developing solution to the first organic coating film, thereby forming a first organic coating film pattern having a predetermined pattern; and a first removing solution for removing metal by the first removing solution supplying section A step of supplying a first organic coating film pattern and a metal-containing coating film, thereby forming a metal-containing coating film pattern having a predetermined pattern; and supplying a cleaning liquid to the first organic coating by a cleaning liquid supply unit. A step of fabricating a film pattern and a substrate including a metal coating film pattern.

A metal-containing coating film is formed on one surface of the substrate, a first organic coating film is formed on the metal-containing coating film with a photosensitive organic material, and the first organic coating film is exposed to a predetermined pattern. According to this developing method, the developing solution is supplied to the first organic coating film by the developing solution supply unit. Thereby, the first organic coating film is developed, and a first organic coating film pattern having a predetermined pattern is formed. The first removal liquid is supplied to the first organic coating film pattern and the metal-containing coating film by the first removal liquid supply unit. Thereby, a part of the metal-containing coating film exposed from the first organic coating film pattern is removed, and a metal-containing coating film pattern having a predetermined pattern is formed. Thereafter, the cleaning liquid is supplied to the substrate having the first organic coating film pattern and the metal-containing coating film pattern by the cleaning liquid supply unit.

According to this method, the substrate on which the first organic coating film pattern and the metal-containing coating film pattern are formed can be washed with a cleaning liquid. Here, the bonding force of the metal-containing coating film pattern to the substrate is greater than the bonding force of the first organic coating film pattern to the substrate. Therefore, the pattern of the metal-containing coating film can remain without collapse even when a large surface tension is applied. Therefore, even in a case where the first organic coating film pattern is collapsed due to the surface tension of the cleaning solution during the cleaning, the metal-containing coating film pattern can be prevented from being collapsed.

(13) A development method according to still another aspect of the present invention is used to develop a substrate, and a film containing a metal-containing coating solution is formed on one surface of the substrate as a metal-containing coating film, and the metal-containing coating is applied to the substrate. A first organic coating film is formed on the cloth film. The first organic coating film is formed of a photosensitive organic material and is exposed to a predetermined pattern. The developing method includes: supplying the first removing liquid The first supply liquid for removing metal is supplied to the first organic coating film and the metal-containing coating film to form a first organic coating film pattern having a predetermined pattern and a metal-containing coating film having a predetermined pattern. A step of patterning; and a step of supplying a cleaning liquid to a substrate having a first organic coating film pattern and a metal-containing coating film pattern by a cleaning liquid supply unit.

A metal-containing coating film is formed on one surface of the substrate, a first organic coating film is formed on the metal-containing coating film with a photosensitive organic material, and the first organic coating film is exposed to a predetermined pattern. According to this development method, the first removal liquid is supplied to the first organic coating film and the metal-containing coating film by the first removal liquid supply unit. Thereby, the first organic coating film is developed, and a first organic coating film pattern having a predetermined pattern is formed. In addition, a portion of the metal-containing coating film exposed from the first organic coating film pattern is removed to form a metal-containing coating film pattern having a predetermined pattern. Thereafter, the cleaning liquid is supplied to the substrate having the first organic coating film pattern and the metal-containing coating film pattern by the cleaning liquid supply unit.

According to this method, the substrate on which the first organic coating film pattern and the metal-containing coating film pattern are formed can be washed with a cleaning liquid. Here, the bonding force of the metal-containing coating film pattern to the substrate is greater than the bonding force of the first organic coating film pattern to the substrate. Therefore, the pattern of the metal-containing coating film can remain without collapse even when a large surface tension is applied. Therefore, even in a case where the first organic coating film pattern is collapsed due to the surface tension of the cleaning solution during the cleaning, the metal-containing coating film pattern can be prevented from being collapsed.

(14) The developing method may further include a step of holding and rotating the substrate after the cleaning liquid supply unit supplies the cleaning liquid by the rotation holding portion. In this case, the substrate to which the cleaning liquid is supplied can be dried in a short time. In addition, since the bonding force between the metal-containing coating film pattern and the substrate is large, even when a centrifugal force is applied to the metal-containing coating film pattern by the rotation of the substrate, the metal-containing coating film pattern can be prevented from being broken.

(15) In still another form of the substrate processing method of the present invention, an exposure device for exposing the substrate is used, and the substrate processing method includes: using a metal-containing coating film forming section as a metal-containing coating liquid A step of forming a metal-containing coating film on one surface by supplying a coating liquid to a surface of a substrate; and a first organic coating film formed of a photosensitive material by a first organic coating film forming section A step of supplying a metal-containing coating film formed by the metal-containing coating film forming portion, thereby forming a first organic coating film on the metal-containing coating film formed by the metal-containing coating film forming portion And a step of performing development processing on a substrate in which a first organic coating film formed by the first organic coating film forming portion is exposed to a predetermined pattern by an exposure device using a development method according to still another aspect of the present invention. .

According to this substrate processing method, a metal-containing coating liquid is supplied to one surface of a substrate through a metal-containing coating film forming section. Thereby, a metal-containing coating film is formed on one surface of the substrate. The first organic coating film forming portion supplies a first organic coating liquid formed of a photosensitive material to the metal-containing coating film. Thereby, the first organic coating film is formed on the metal-containing coating film formed by the metal-containing coating film forming section. In the exposure apparatus, the first organic coating film system formed by the first organic coating film forming section is exposed to a predetermined pattern.

According to a developing method, a developing solution is supplied to a first organic coating film exposed to a predetermined pattern by a developing solution supply unit. Thereby, the first organic coating film is developed, and a first organic coating film pattern having a predetermined pattern is formed. The first removal liquid is supplied to the first organic coating film pattern and the metal-containing coating film by the first removal liquid supply unit. Thereby, a part of the metal-containing coating film exposed from the first organic coating film pattern is removed, and a metal-containing coating film pattern having a predetermined pattern is formed. Thereafter, the cleaning liquid is supplied to the substrate having the first organic coating film pattern and the metal-containing coating film pattern by the cleaning liquid supply unit.

According to this method, the substrate on which the first organic coating film pattern and the metal-containing coating film pattern are formed can be washed with a cleaning liquid. Here, the bonding force of the metal-containing coating film pattern to the substrate is greater than the bonding force of the first organic coating film pattern to the substrate. Therefore, the pattern of the metal-containing coating film can remain without collapse even when a large surface tension is applied. Therefore, even in a case where the first organic coating film pattern is collapsed due to the surface tension of the cleaning solution during the cleaning, the metal-containing coating film pattern can be prevented from being collapsed.

(16) The substrate processing method may further include, before the step of forming the metal-containing coating film, supplying the second organic coating liquid to one surface of the substrate through the second organic coating film forming section, and A step of forming a second organic coating film between the metal coating films.

In this case, a second organic coating film is formed between one surface of the substrate and the metal-containing coating film. This makes it possible to form the second organic coating film into a predetermined pattern using the metal-containing coating film pattern. In addition, by forming the second organic coating film to be thick, a pattern of the second organic coating film having a large thickness and a small width can be formed.

According to the present invention, it is possible to prevent collapse of the pattern of the coating film.

1‧‧‧ developer

2‧‧‧ cleaning fluid

3, 5‧‧‧ Replacement Solution

4‧‧‧ cleaning fluid

11‧‧‧ index block

12‧‧‧ Coated blocks

13‧‧‧Coated imaging block

14‧‧‧Interface Block

15‧‧‧Exposure device

21, 22, 23,

24, 32, 34‧‧‧‧coating processing room

25, 35‧‧‧Rotary chuck

27, 37‧‧‧ hood

28‧‧‧ coating liquid nozzle

29‧‧‧ Nozzle transfer mechanism

30, 40‧‧‧ Replacement nozzle

31, 33‧‧‧Development processing room

36‧‧‧Cleaning the nozzle

38‧‧‧Slit nozzle

39‧‧‧ mobile agency

100‧‧‧ substrate processing equipment

101, 103‧‧‧ Upper heat treatment department

102, 104‧‧‧ Lower heat treatment department

111‧‧‧ Carrier mounting section

112‧‧‧Transportation Department

113‧‧‧ Carrier

114‧‧‧Main controller

115‧‧‧ transfer agency

121‧‧‧ Coating Processing Department

122‧‧‧Transportation Department

123‧‧‧Heat treatment department

125, 135‧‧‧ Upper Transfer Room

126, 136‧‧‧ lower transfer room

127, 128, 137, 138‧‧‧ transfer mechanism (transfer robot)

129‧‧‧coating processing unit

131‧‧‧ Coating development processing department

132, 163‧‧‧Transportation Department

133‧‧‧Heat treatment department

139, 139X‧‧‧Development processing unit

141, 142, 143‧‧‧‧ transport agencies

161, 162‧‧‧washing and drying processing department

14A‧‧‧Washing and drying processing block

14B‧‧‧ Move in and out

15a‧‧‧Substrate Carry-in Section

15b‧‧‧Substrate removal unit

F1, F3‧‧‧‧Organic coated film (coated film)

F2‧‧‧ metal-containing coating film (coating film)

LC1, LC2‧‧‧ local controller

PASS1, PASS2, PASS3, PASS4, PASS5, PASS6, PASS7, PASS8, PASS9‧‧‧ substrate mounting section

P-BF1, P-BF2 ‧‧‧ placement and buffer section

P-CP‧‧‧Mounting and cooling section

SD1, SD2‧‧‧washing and drying processing unit

X, Y, Z‧‧‧ directions

W‧‧‧ substrate

PHP‧‧‧Heat treatment unit

CP‧‧‧ Cooling Unit

FIG. 1 is a plan view schematically showing the configuration of a development processing unit according to an embodiment of the present invention.

FIG. 2 is a partially enlarged longitudinal sectional view of a substrate to be processed by the development processing unit of FIG. 1.

(A) to (c) of FIG. 3 are diagrams for explaining the operation of the development processing unit of FIG. 1.

(A) to (c) of FIG. 4 are diagrams for explaining the operation of the development processing unit of FIG. 1.

FIG. 5 is a schematic plan view of a substrate processing apparatus including the development processing unit of FIG. 1.

FIG. 6 is a side view schematically showing the internal configuration of the coating processing section, the coating developing processing section, and the washing and drying processing section of FIG. 5.

FIG. 7 is a side view schematically showing the internal configuration of the heat treatment section and the washing and drying treatment section of FIG. 5.

FIG. 8 is a side view schematically showing the internal configuration of the conveying section.

Fig. 9 is a plan view schematically showing the configuration of a development processing unit according to another embodiment.

(A) to (c) of FIG. 10 are diagrams for explaining the operation of the development processing unit of FIG. 9.

Hereinafter, a developing device, a substrate processing apparatus, a developing method, and a substrate processing method according to an embodiment of the present invention will be described using drawings. In the following description, the substrate refers to a substrate for an FPD (Flat Panel Display), a substrate for an optical disk, and a magnetic disk such as a semiconductor substrate, a liquid crystal display device, or an organic EL (Electro Luminescence) display device. Substrates, substrates for magneto-optical disks, substrates for photo masks, substrates for solar cells, and the like.

(1) Composition of development processing unit

FIG. 1 is a plan view schematically showing the configuration of a development processing unit according to an embodiment of the present invention. As shown in FIG. 1, a development processing unit (spin developer) 139 includes a plurality of replacement nozzles 30, a plurality of rotary chucks 35, a plurality of cleaning nozzles 36, and a plurality of cups 37. In addition, the development processing unit 139 includes two slit nozzles 38 for ejecting the developing liquid, and a moving mechanism 39 for moving the slit nozzles 38 in one direction. In the present embodiment, three replacement nozzles 30, a rotating chuck 35, a cleaning nozzle 36, and a cover 37 are provided in the development processing unit 139 each.

Each rotary chuck 35 is rotationally driven by a driving device (for example, an electric motor) (not shown) while holding the substrate W. The cover 37 is provided so as to surround the periphery of the spin chuck 35. The developing solution is supplied from a developing solution storage section (not shown) to each of the slit nozzles 38 through a developing solution pipe. Any one of the slit nozzles 38 is moved above the substrate W by the moving mechanism 39. The developing liquid is ejected from the slit nozzle 38 while the rotary chuck 35 is rotated, and the development process of the substrate W is performed.

The replacement nozzle 30 is provided so as to be rotatable between a standby position outside the cover 37 and a processing position above the center portion of the substrate W held by the rotary chuck 35. During the replacement process after the development process of the substrate W, the replacement nozzle 30 is moved to the processing position. The substrate W is replaced by discharging the replacement liquid from the replacement nozzle 30 while rotating the spin chuck 35.

As the replacement liquid system, for example, an alkaline replacement liquid or an acidic replacement liquid is used. The alkaline replacement liquid is, for example, an aqueous solution containing ammonia and hydrogen peroxide. The alkaline replacement liquid may be, for example, TMAH (tetra methyl ammonium hydroxide; tetramethylammonium hydroxide). The acidic replacement liquid is, for example, an aqueous solution containing a dilute acid. The acidic replacement liquid may be, for example, an aqueous solution containing sulfuric acid and hydrogen peroxide, or may be an aqueous solution containing acetic acid.

Alternatively, the replacement liquid may be an aqueous solution containing a chelating agent. Chelating agents contain derivatives of organic acids, salts of organic acids, amino acids, amino acid derivatives, inorganic bases, salts of inorganic bases, alkylamines, derivatives of alkylamines, alkanolamines, and alkanolamines. One or more selected from the group consisting of objects.

The cleaning nozzle 36 is provided so as to be rotatable between a standby position outside the cover 37 and a processing position above the center portion of the substrate W held by the rotary chuck 35. During the cleaning process after the substrate W replacement process, the cleaning nozzle 36 moves to the processing position. The substrate W is cleaned by ejecting the cleaning liquid from the cleaning nozzle 36 while rotating the spin chuck 35.

(2) Operation of the development processing unit

FIG. 2 is a partially enlarged vertical cross-sectional view of the substrate W that is a processing target of the development processing unit 139 of FIG. 1. As shown in FIG. 2, three types of coating films F1, F2, and F3 are formed on the to-be-processed surface of the substrate W as a resist film. Specifically, a coating film F1 is formed on the processing surface of the substrate W, a coating film F2 is formed on the coating film F1, and a coating film F3 is formed on the coating film F2. The coating films F1 to F3 are formed on the surface to be processed of the substrate W by the substrate processing apparatus 100 of FIGS. 5 to 8 described later.

The coating film F1 is a non-photosensitive organic film, and in this embodiment is a SOC (Spin-On-Carbon) film. Hereinafter, the coating film F1 is referred to as an organic coating film F1. The organic coating film F1 has a large thickness. The thickness of the organic coating film F1 in this embodiment is, for example, 100 nm to 300 nm.

The coating film F2 is a non-photosensitive inorganic film. The coating film F2 contains a metal component such as a metal component or a metal oxide as a composition. In this embodiment, the coating film F2 is made to contain, for example, Sn (tin), HfO ₂ (hafnium oxide), or ZrO ₂ (zirconia) as a metal component. Hereinafter, the coating film F2 is referred to as a metal-containing coating film F2. The metal-containing coating film F2 has a small thickness. The thickness of the metal-containing coating film F2 in this embodiment is, for example, 5 nm or more and 30 nm or less.

The coating film F3 is, for example, an organic film, and the organic film is photosensitive in the ultraviolet region. Hereinafter, the coating film F3 is referred to as an organic coating film F3. The organic coating film F3 is exposed to a predetermined pattern. The thickness of the organic coating film F3 in this embodiment is, for example, 20 nm to 60 nm. In this embodiment, the organic coating film F1 and the metal-containing coating film F2 are non-photosensitive, but the present invention is not limited thereto. The organic coating film F1 and the metal-containing coating film F2 may have photosensitivity even when the photosensitive wavelength region is different from the organic coating film F3.

3 and 4 are diagrams for explaining the operation of the development processing unit 139 of FIG. 1. In the developing process, as shown in FIG. 3 (a), the developing solution 1 is supplied to the substrate W from the slit nozzle 38 (FIG. 1). Thereby, the liquid layer of the developing solution 1 is formed on the to-be-processed surface of the substrate W. Then, as shown in FIG. 3 (b), the cleaning liquid 2 is supplied to the substrate W from the cleaning nozzle 36 (FIG. 1). As a result, unnecessary portions of the organic coating film F3 and the developing solution 1 are removed, and a pattern is formed on the organic coating film F3.

In the subsequent replacement process, as shown in FIG. 3 (c), the replacement liquid 3 is supplied to the substrate W from the replacement nozzle 30 (FIG. 1). Thereby, the liquid layer of the replacement liquid 3 is formed on the processing surface of the substrate W, and the cleaning liquid 2 remaining on the processing surface of the substrate W is replaced with the replacement liquid 3. After that, as shown in FIG. 4A, by holding the liquid layer of the replacement liquid 3, a part of the metal-containing coating film F2 exposed from the organic coating film F3 is removed, and the metal-containing coating film F2 is removed. Formed with a pattern.

In the subsequent cleaning process, as shown in FIG. 4 (b), the replacement liquid 3 is removed by supplying the cleaning liquid 4 to the substrate W from the cleaning nozzle 36 (FIG. 1). Then, as shown in FIG. 4 (c), the substrate W is rotated at a high speed (for example, 1000 rpm or less) by the rotation chuck 35 (FIG. 1). Thereby, the cleaning liquid 4 remaining on the substrate W is shaken away, and the substrate W is dried in a short time. Here, since the bonding force between the pattern of the metal-containing coating film F2 and the substrate W (organic coating film F1) is large, the centrifugal force is applied to the pattern of the metal-containing coating film F2 by rotation of the substrate W In this way, the pattern collapse of the metal-containing coating film F2 can still be prevented.

In addition, in the processes of (a) to (b) in FIG. 3, the substrate W may be rotated at a low speed (for example, about 10 rpm) or stopped by rotating the chuck 35. When the substrate W is rotated, the concentration of the liquid layer can be made more uniform as a whole by stirring the liquid layer of the developing liquid 1 or the replacement liquid 3.

According to the above processing, as shown in FIG. 4 (c), although a part of the pattern of the organic coating film F3 may collapse, the pattern of the metal-containing coating film F2 may not collapse. Therefore, after the pattern of the organic coating film F3 is removed, the pattern of the metal-containing coating film F2 is transferred to the organic coating film F1 using dry etching or the like, whereby the organic coating film F1 having a large thickness and a small width can be transferred The pattern is formed without collapse.

(3) Structure of substrate processing apparatus

FIG. 5 is a schematic plan view of a substrate processing apparatus including the development processing unit 139 of FIG. 1. The predetermined figures in FIG. 5 and the following are attached with arrow signs indicating X directions, Y directions, and Z directions that are orthogonal to each other in order to clarify the positional relationship. The X and Y directions are orthogonal to each other in a horizontal plane, and the Z direction corresponds to a vertical direction.

As shown in FIG. 5, the substrate processing apparatus 100 includes an indexer block 11, a coating block 12, a coating developing block 13, a washing and drying processing block 14A, and a carry-in and carry-out block 14B. The interface block 14 is constituted by washing and drying the processing block 14A and carrying in and out of the block 14B. The exposure device 15 is arranged so as to be adjacent to the carry-in / out block 14B. The exposure device 15 performs an exposure process on the substrate W.

The index block 11 includes a plurality of carrier mounting portions 111 and a transporting portion 112. A carrier 113 that houses a plurality of substrates W in multiple stages is mounted on each carrier mounting portion 111. The transfer unit 112 is provided with a main controller 114 and a transfer mechanism 115. The main controller 114 controls various components of the substrate processing apparatus 100. The transport mechanism 115 transports the substrate W while holding the substrate W.

The coating block 12 includes a coating processing section 121, a conveying section 122, and a thermal processing section 123. The coating treatment section 121 and the heat treatment section 123 are opposed to each other with the transport section 122 interposed therebetween. Between the transfer section 122 and the index block 11, substrate mounting sections PASS1 to PASS4 (see FIG. 8) for mounting the substrate W are provided. The transfer unit 122 is provided with transfer mechanisms (transfer robots) 127 and 128 (refer to FIG. 8) for transferring the substrate W.

The coating development block 13 includes a coating development processing unit 131, a transfer unit 132, and a heat treatment unit 133. The coating development processing section 131 and the heat treatment section 133 are opposed to each other with the transport section 132 interposed therebetween. Between the transfer unit 132 and the transfer unit 122, there are substrate placement units PASS5 to PASS8 (see FIG. 8) on which the substrate W is placed. The transfer unit 132 is provided with transfer mechanisms 137 and 138 (see FIG. 8) for transferring the substrate W.

The washing and drying processing block 14A includes washing and drying processing sections 161 and 162 and a conveying section 163. The washing and drying processing sections 161 and 162 face each other with the conveying section 163 interposed therebetween. The transfer unit 163 is provided with transfer mechanisms 141 and 142.

Between the transfer unit 163 and the transfer unit 132, placement and buffer portions P-BF1 and P-BF2 are provided (see FIG. 8). The placement and buffer portions P-BF1 and P-BF2 are configured to accommodate a plurality of substrates W.

A substrate placement section PASS9 and a later-described placement and cooling section P-CP are provided between the transfer mechanisms 141 and 142 so as to be adjacent to the carry-in / out block 14B (see FIG. 8). The mounting and cooling section P-CP has a function of cooling the substrate W (for example, a cooling plate). The substrate W is cooled to a temperature suitable for the exposure processing in the placement and cooling section P-CP.

A transfer mechanism 143 is provided in the carry-in / out block 14B. The transfer mechanism 143 carries in and out of the substrate W to and from the exposure device 15. The exposure device 15 is provided with a substrate carrying-in portion 15 a for carrying in the substrate W and a substrate carrying-out portion 15 b for carrying out the substrate W.

(4) Coating processing section and coating development processing section

FIG. 6 is a side view schematically showing the internal configuration of the coating processing unit 121, the coating development processing unit 131, and the washing and drying processing unit 161 of FIG. 5. As shown in FIG. 6, the coating processing sections 121 are provided with coating processing chambers 21, 22, 23, and 24 in a hierarchical manner. The coating development processing sections 131 are provided with development processing chambers 31 and 33 and coating processing chambers 32 and 34 in layers. A coating processing unit (spin coater) 129 is provided in each of the coating processing chambers 21 to 24, 32, and 34. A development processing unit 139 of FIG. 1 is provided in each development processing chamber 31 and 33.

Each coating processing unit 129 includes a spin chuck 25 to hold the substrate W, and a cover 27 provided to cover the periphery of the spin chuck 25. In this embodiment, two sets of the rotary chuck 25 and the cover 27 are provided in each coating processing unit 129. The rotary chuck 25 is rotationally driven by a driving device (for example, an electric motor) (not shown). As shown in FIG. 5, each coating processing unit 129 includes a plurality of coating liquid nozzles 28 that spray the coating liquid, and a nozzle transfer mechanism 29 that transfers the coating liquid nozzles 28.

In the coating processing unit 129, the rotary chuck 25 is rotated by a driving device (not shown), and any one of the plurality of coating liquid nozzles 28 is moved by the nozzle transfer mechanism 29 to The coating liquid is ejected from the coating liquid nozzle 28 above the substrate W. Thereby, the coating liquid is applied onto the substrate W. In addition, a cleaning liquid is ejected from a peripheral cleaning portion of the substrate W from an edge cleaning nozzle (not shown). Thereby, the coating liquid adhering to the peripheral part of the board | substrate W is removed.

In the coating processing units 129 of the coating processing chambers 22 and 24, a coating liquid for the organic coating film F1 in FIG. 2 is supplied from the coating liquid nozzle 28 to the substrate W. In the coating processing unit 129 of the coating processing chambers 21 and 23, a coating liquid for the metal-containing coating film F2 of FIG. 2 is supplied from the coating liquid nozzle 28 to the substrate W. The coating processing unit 129 of the coating processing chambers 32 and 34 supplies a coating liquid for the organic coating film F3 in FIG. 2 from the coating liquid nozzle 28 to the substrate W.

As shown in FIG. 5, the coating processing chambers 31 and 33 are each provided with a development processing unit 139 such that a plurality of rotary chucks 35 are arranged in the X direction and the moving mechanism 39 is movable in the X direction. In the coating processing chambers 31 and 33, the substrate W is subjected to development processing, replacement processing, and cleaning processing as shown in Figs. 3 and 4.

As shown in FIG. 6, a plurality of (four in this example) washing and drying processing units SD1 are provided in the washing and drying processing section 161. The washing and drying processing unit SD1 performs washing and drying processing of the substrate W before the exposure processing.

(5) Heat treatment department

FIG. 7 is a side view schematically showing the internal configuration of the heat treatment sections 123 and 133 and the washing and drying treatment section 162 of FIG. 5. As shown in FIG. 7, the heat treatment section 123 includes an upper heat treatment section 101 provided above and a lower heat treatment section 102 provided below. The upper heat treatment section 101 and the lower heat treatment section 102 are provided with a plurality of heat treatment units PHP and a plurality of cooling units CP. The heat treatment unit PHP performs a heating process and a cooling process of the substrate W. The cooling unit CP performs a cooling process on the substrate W.

A local controller LC1 is provided at the uppermost part of the heat treatment section 123. The local controller LC1 controls operations of the coating processing unit 121, the conveying unit 122, and the heat treatment unit 123 based on a command from the main controller 114 of FIG. 5.

The heat treatment section 133 includes an upper heat treatment section 103 provided above and a lower heat treatment section 104 provided below. The upper heat treatment section 103 and the lower heat treatment section 104 are provided with a cooling unit CP and a plurality of heat treatment units PHP.

A local controller LC2 is provided at the uppermost part of the heat treatment section 133. The local controller LC2 controls the operations of the coating and development processing unit 131, the conveyance unit 132, and the heat treatment unit 133 based on instructions from the main controller 114 in FIG. 5.

A plurality of (five in this example) washing and drying processing units SD2 are provided in the washing and drying processing section 162. The washing and drying processing unit SD2 performs washing and drying processing of the substrate W after the exposure processing.

(6) Transportation department

FIG. 8 is a side view schematically showing the internal configuration of the conveying sections 122, 132, and 163. As shown in FIG. 8, the transfer unit 122 includes an upper transfer chamber 125 and a lower transfer chamber 126. The transfer unit 132 includes an upper transfer chamber 135 and a lower transfer chamber 136. A transfer mechanism 127 is provided in the upper transfer room 125, and a transfer mechanism 128 is provided in the lower transfer room 126. A transfer mechanism 137 is provided in the upper transfer chamber 135, and a transfer mechanism 138 is provided in the lower transfer chamber 136.

As shown in FIG. 8, substrate placement sections PASS1 and PASS2 are provided between the transfer section 112 and the upper transfer chamber 125, and substrate placement sections PASS3 and PASS4 are provided between the transfer section 112 and the lower transfer chamber 126. Substrate placement sections PASS5 and PASS6 are provided between the upper transfer chamber 125 and the upper transfer chamber 135, and substrate transfer sections PASS7 and PASS8 are provided between the lower transfer chamber 126 and the lower transfer chamber 136.

A placing and buffering portion P-BF1 is provided between the upper transfer chamber 135 and the transfer unit 163, and a placing and buffering portion P-BF2 is provided between the lower transfer chamber 136 and the transfer unit 163. A substrate placement section PASS9 and a plurality of placement and cooling sections P-CP are provided in the transfer section 163 so as to be adjacent to the carry-in / out block 14B.

The transfer mechanism 127 transmits and receives substrates W to and from the coating processing chambers 21 and 22 (FIG. 6), the substrate mounting sections PASS1, PASS2, PASS5, PASS6 (FIG. 8), and the upper stage heat treatment section 101 (FIG. 7). The transfer mechanism 128 transfers and receives substrates W to and from the coating processing chambers 23 and 24 (FIG. 6), the substrate mounting portions PASS3, PASS4, PASS7, PASS8 (FIG. 8), and the lower stage heat treatment portion 102 (FIG. 7).

The conveying mechanism 137 is a processing processing chamber 31 (FIG. 6), a coating processing chamber 32 (FIG. 6), a substrate mounting section PASS5, PASS6 (FIG. 8), a mounting and buffering section P-BF1 (FIG. 8) and The upper-stage heat treatment section 103 (FIG. 7) transmits and receives the substrate W. The conveying mechanism 138 is for the development processing chamber 33 (FIG. 6), the coating processing chamber 34 (FIG. 6), the substrate placing sections PASS7, PASS8 (FIG. 8), the placing and buffering section P-BF2 (FIG. 8), and The lower stage heat treatment section 104 (FIG. 7) transmits and receives the substrate W.

(7) Substrate processing

The substrate processing will be described with reference to FIGS. 5 to 8. The carrier mounting portion 111 (FIG. 5) of the index block 11 mounts a carrier 113, and the carrier 113 houses an unprocessed substrate W. The transfer mechanism 115 transfers the unprocessed substrate W from the carrier 113 to the substrate mounting sections PASS1 and PASS3 (FIG. 8). In addition, the transfer mechanism 115 transfers the processed substrate W placed on the substrate mounting portions PASS2 and PASS4 (FIG. 8) to the carrier 113.

In the coating block 12, the transfer mechanism 127 (FIG. 8) sequentially transfers the unprocessed substrates W placed on the substrate mounting portion PASS1 to the cooling unit CP (FIG. 7) and the coating processing chamber 22 (FIG. 8). 6). Then, the transfer mechanism 127 sequentially transfers the substrate W of the coating processing chamber 22 to the heat treatment unit PHP (FIG. 7), the cooling unit CP (FIG. 7), the coating treatment chamber 21 (FIG. 6), and the heat treatment unit PHP (FIG. 7) and the substrate mounting portion PASS5 (Figure 8).

In this case, the substrate W is cooled to a temperature suitable for the formation of the organic coating film F1 (FIG. 2) in the cooling unit CP. Then, in the coating processing chamber 22, an organic coating film F1 is formed on the substrate W by a coating processing unit 129 (FIG. 6). Then, the substrate W is heat-treated in the heat treatment unit PHP, and then the substrate W is cooled to a temperature suitable for forming the metal-containing coating film F2 (FIG. 2) in the cooling unit CP. Then, in the coating processing chamber 21, a metal-containing coating film F2 is formed on the substrate W by a coating processing unit 129 (FIG. 6). Thereafter, in the heat treatment unit PHP, heat treatment is performed on the substrate W, and the substrate W is placed on the substrate placement portion PASS5.

In addition, the transfer mechanism 127 transfers the substrate W placed on the substrate mounting portion PASS6 (FIG. 8) after development processing, replacement processing, and cleaning processing to the substrate mounting portion PASS2 (FIG. 8).

The transfer mechanism 128 (FIG. 8) sequentially transfers the unprocessed substrates W placed on the substrate mounting section PASS3 to the cooling unit CP (FIG. 7) and the coating processing chamber 24 (FIG. 6). Then, the transfer mechanism 128 sequentially transfers the substrate W of the coating processing chamber 24 to the heat treatment unit PHP (FIG. 7), the cooling unit CP (FIG. 7), the coating processing chamber 23 (FIG. 6), and the heat treatment unit PHP (FIG. 7) and the substrate mounting portion PASS7 (Figure 8).

In addition, the transfer mechanism 128 (FIG. 8) transfers the substrate W after the development processing, replacement processing, and cleaning processing placed on the substrate mounting section PASS8 (FIG. 8) to the substrate mounting section PASS4 (FIG. 8). The processing contents of the substrate W in the coating processing chambers 23 and 24 (FIG. 6) and the lower stage heat treatment section 102 (FIG. 7) are the same as those of the coating treatment chambers 21 and 22 (FIG. 6) and the upper stage heat treatment section 101 (FIG. 7), respectively. The processing content of the substrate W in) is the same.

In the coating and developing block 13, the transfer mechanism 137 (FIG. 8) sequentially transfers the substrate W formed by the metal-containing coating film F2 placed on the substrate mounting portion PASS5 to the cooling unit CP (FIG. 7), The coating processing chamber 32 (FIG. 6), the heat treatment unit PHP (FIG. 7), and the placing and buffering portion P-BF1 (FIG. 8).

In this case, in the cooling unit CP, the substrate W is cooled to a temperature suitable for forming the organic coating film F3 (FIG. 2). Then, in the coating processing chamber 32, an organic coating film F3 is formed on the substrate W by a coating processing unit 129 (FIG. 6). Thereafter, in the heat treatment unit PHP, heat treatment is performed on the substrate W, and the substrate W is placed on the placement and buffer portion P-BF1.

In addition, the transfer mechanism 137 (FIG. 8) takes out the substrate W after the exposure process and the heat treatment from the heat treatment unit PHP (FIG. 7) adjacent to the washing and drying processing block 14A. The transfer mechanism 137 sequentially transfers the substrate W to the cooling unit CP (FIG. 7), the development processing chamber 31 (FIG. 6), the heat treatment unit PHP (FIG. 7), and the substrate mounting portion PASS6 (FIG. 8).

In this case, after the substrate W in the cooling unit CP is cooled to a temperature suitable for development processing, the development processing unit 31 performs development processing, replacement processing, and cleaning processing of the substrate W by the development processing unit 139. Thereafter, in the heat treatment unit PHP, heat treatment is performed on the substrate W, and the substrate W is placed on the substrate placement portion PASS6.

The transfer mechanism 138 (FIG. 8) sequentially transfers the substrate W formed by the metal-containing coating film placed on the substrate mounting portion PASS7 to the cooling unit CP (FIG. 7) and the coating processing chamber 34 (FIG. 6), The heat treatment unit PHP (FIG. 7) and the mounting and buffering part P-BF2 (FIG. 8).

In addition, the transfer mechanism 138 (FIG. 8) takes out the substrate W after the exposure process and the heat treatment from the heat treatment unit PHP (FIG. 7) adjacent to the interface block 14. The transfer mechanism 138 sequentially transfers the substrate W to the cooling unit CP (FIG. 7), the development processing chamber 33 (FIG. 6), the heat treatment unit PHP (FIG. 7), and the substrate mounting portion PASS8 (FIG. 8). The processing contents of the substrate W in the development processing chamber 33, the coating processing chamber 34, and the lower heat treatment section 104 are the same as those of the substrate W in the development processing chamber 31, the coating processing chamber 32, and the upper heat treatment section 103, respectively. the same.

In the cleaning and drying processing block 14A, the transfer mechanism 141 (FIG. 5) sequentially transfers the substrates W placed on the mounting and buffer sections P-BF1 and P-BF2 (FIG. 8) to the cleaning and drying processing unit SD1 (FIG. 5). 6) and placing and cooling section P-CP (Fig. 8). In this case, after the substrate W is washed and dried in the cleaning and drying processing unit SD1, the substrate W is cooled in the placement and cooling section P-CP to a temperature suitable for the exposure processing performed by the exposure device 15 (FIG. 5). temperature.

The conveying mechanism 142 (Fig. 5) sequentially conveys the exposed substrates W placed on the substrate placing section PASS9 (Fig. 8) to the cleaning and drying processing unit SD2 (Fig. 7) and the upper stage heat treatment section 103 or the lower stage heat treatment section. The heat treatment unit PHP 104 (Fig. 7). In this case, after the substrate W in the cleaning and drying processing unit SD2 is washed and dried, a post exposure bake (PEB) process is performed in the thermal processing unit PHP.

In the loading / unloading block 14B, the transfer mechanism 143 (FIG. 5) transfers the substrate W before the exposure process carried by the placement and cooling section P-CP (FIG. 8) to the substrate loading section 15 a (FIG. 5). In addition, the transfer mechanism 143 (FIG. 5) takes out the substrate W after the exposure process from the substrate carrying-out portion 15 b (FIG. 5) of the exposure device 15 and transfers the substrate W to the substrate placing portion PASS9 (FIG. 8).

In this embodiment, the processing of substrates W in the upper coating processing chambers 21, 22, and 32, the development processing chamber 31, and the upper thermal processing sections 101 and 103, and the coating processing chambers 23 and 24 provided in the lower stage , 34, the processing system of the substrate W in the development processing chamber 33 and the lower heat treatment sections 102 and 104 can be performed in parallel. Thereby, the throughput can be increased without increasing the footprint.

(8) Efficacy

In the substrate processing apparatus 100 of this embodiment, an organic coating film F1 is formed on one surface of the substrate W by a coating processing unit 129 of the coating processing chambers 22 and 24. A metal-containing coating film F2 is formed on the organic coating film F1 by a coating processing unit 129 of the coating processing chambers 21 and 23. Furthermore, an organic coating film F3 made of a photosensitive organic material is formed on the metal-containing coating film F2 by the coating processing units 129 of the coating processing chambers 32 and 34. The organic coating film F3 is exposed to a predetermined pattern by the exposure device 15.

In the development processing unit 139 of the development processing chambers 31 and 33, the development liquid is supplied from the slit nozzle 38 to the organic coating film F3. Thereby, the organic coating film F3 is developed, and a predetermined pattern is formed in the organic coating film F3. The replacement liquid is supplied to the pattern of the organic coating film F3 and the metal-containing coating film F2 through the replacement nozzle 30. Thereby, a part of the metal-containing coating film F2 exposed from the pattern of the organic coating film F3 is removed, and a predetermined pattern is formed on the metal-containing coating film F2. Thereafter, the cleaning liquid is supplied to the substrate W having a pattern of the organic coating film F3 and a pattern of the metal-containing coating film F2 through the cleaning nozzle 36.

According to this configuration, the substrate W on which the pattern of the organic coating film F3 and the pattern of the metal-containing coating film F2 are formed can be washed with the cleaning liquid. Here, the bonding force of the pattern of the metal-containing coating film F2 to the substrate W is larger than the bonding force of the pattern of the organic coating film F3 to the substrate W. Therefore, the pattern of the metal-containing coating film F2 can remain without collapse even when a large surface tension is applied. Therefore, even in a case where the pattern of the organic coating film F3 is collapsed due to the surface tension of the cleaning liquid during the cleaning, the pattern of the metal-containing coating film F2 can be prevented from being collapsed.

In addition, it becomes possible to form the organic coating film F1 into a predetermined pattern using the pattern of the metal-containing coating film F2 already formed. Here, since the organic coating film F1 has a relatively large thickness, it has a pattern in which the organic coating film F1 having a large thickness and a small width can be formed.

(9) Another embodiment

In the substrate processing apparatus 100 of the above embodiment, the removal of the pattern of the organic coating film F3 and the transfer of the pattern of the metal-containing coating film F2 to the organic coating film F1 are not performed, but the present invention is not limited thereto. In the substrate processing apparatus 100, removal of the pattern of the organic coating film F3 and transfer of the pattern of the metal-containing coating film F2 to the organic coating film F1 may be performed.

FIG. 9 is a plan view schematically showing the configuration of a development processing unit according to another embodiment. The difference between the development processing unit 139X of the other embodiment and the development processing unit 139 of FIG. 1 will be described. As shown in FIG. 9, the development processing unit 139X of the present embodiment further includes a plurality of replacement nozzles 40. In this embodiment, three replacement nozzles 40 are provided for each of the development processing units 139X.

The replacement nozzle 40 is provided so as to be rotatable between a standby position outside the cover 37 and a processing position above the center portion of the substrate W held by the spin chuck 35. During the replacement process, the replacement nozzle 40 moves to the processing position. The substrate W is replaced by discharging the replacement liquid from the replacement nozzle 40 while rotating the spin chuck 35. As the replacement liquid discharged from the replacement nozzle 40, for example, an aqueous solution containing sulfuric acid and hydrogen peroxide can be used.

FIG. 10 is a diagram for explaining the operation of the development processing unit 139X of FIG. 9. The replacement processing in (a) to (c) in FIG. 10 is performed between the replacement processing in (a) in FIG. 4 and the cleaning processing in (b) in FIG. 4. After the replacement process in (a) of FIG. 4, as shown in FIG. 10 (a), the replacement liquid 5 is supplied from the replacement nozzle 40 (FIG. 9) to the substrate W. Thereby, a liquid layer of the replacement liquid 5 is formed on the processing surface of the substrate W, and the replacement liquid 3 remaining on the processing surface of the substrate W is replaced with the replacement liquid 5. Thereafter, as shown in FIG. 10 (b), the liquid layer of the replacement liquid 5 is held, whereby the organic coating film F3 is removed.

In addition, in a case where the organic coating film F1 is subjected to appropriate heat treatment, even when a pattern is formed by wet etching on the organic coating film F1, the collapse of the pattern is unlikely to occur. Here, after the step (b) in FIG. 10 in this embodiment, as shown in FIG. 10 (c), the liquid layer of the replacement liquid 5 is further maintained, so that the metal-containing coating film is removed. A portion of the organic coating film F1 exposed by F2 is removed, and a pattern is formed on the organic coating film F1. After that, the cleaning process in (b) of FIG. 4 is performed. Thereby, the replacement liquid 5 is removed.

Although the pattern of the organic coating film F3 is removed and the pattern of the metal-containing coating film F2 is transferred to the organic coating film F1 in the development processing unit 139X, the present invention is not limited thereto. In the development processing unit 139X, the pattern of the organic coating film F3 may be removed, but the pattern of the metal-containing coating film F2 to the organic coating film F1 may not be transferred. In this case, after the replacement process in FIG. 10 (b), the cleaning process in FIG. 4 (b) is performed without performing the replacement process in FIG. 10 (c).

In this embodiment, the replacement nozzle 40 for removing the pattern of the organic coating film F3 and transferring the pattern of the metal-containing coating film F2 to the organic coating film F1 is provided in the developing processing unit. 139X, but the present invention is not limited thereto. The replacement nozzle 40 may be provided in another unit of the substrate processing apparatus 100 instead of the development processing unit 139X.

(10) Modifications

(a) In the above embodiment, although the development processing units 139 and 139X have the slit nozzle 38 for supplying the development liquid to the substrate W, the present invention is not limited thereto. When an alkaline aqueous solution such as TMAH or KOH (potassium hydroxide) is used as the replacement liquid supplied from the replacement nozzle 30, the substrate W can be subjected to positive tone development processing by the replacement liquid. In this case, the development processing units 139 and 139X may not have the slit nozzle 38. In this configuration, the development processing of (a) and (b) in FIG. 3 is omitted. This configuration corresponds to the invention of the other aspect and the invention of still another aspect.

(b) In the above embodiment, although the organic coating film F1 is formed between the substrate W and the metal-containing coating film F2, the present invention is not limited thereto. When the pattern processing substrate W containing the metal-containing coating film F2 can be used, the organic coating film F1 may not be formed.

(11) Correspondence between the various requirements of the scope of the patent application and the requirements of the embodiment

In the following, an example of correspondence between each constituent element in the scope of patent application and each element of the embodiment will be described, but the present invention is not limited to the following examples.

In the above embodiment, the substrate W is an example of a substrate, the development processing units 139 and 139X are examples of a developing device, the metal-containing coating film F2 is an example of a metal-containing coating film, and the organic coating films F3 and F1 are respectively An example of the first organic coating film and the second organic coating film. The slit nozzle 38 is an example of a developing liquid supply portion, the replacement nozzle 30 is an example of a first removing liquid supply portion, the cleaning nozzle 36 is an example of a cleaning liquid supply portion, and the rotary chuck 35 is an example of a rotation holding portion.

The replacement nozzle 40 is an example of a second removal liquid supply unit and a third removal liquid supply unit, the exposure device 15 is an example of an exposure device, the substrate processing device 100 is an example of a substrate processing device, and the coating processing chambers 21 and 23 are applied. The processing unit 129 is an example of a metal-containing coating film forming portion. The coating processing unit 129 of the coating processing chambers 32 and 34 is an example of a first organic coating film forming portion, and the coating processing unit 129 of the coating processing chambers 22 and 24 is an example of a second organic coating film forming portion.

As each constituent element of the scope of patent application, various other elements having a structure or function described in the scope of patent application may be used.

(Industrial availability)

The present invention can be effectively used for substrate processing using various processing liquids.

Claims (16)

    A developing device is used for developing a substrate; a film containing a metal-containing coating liquid is formed on one surface of the substrate as a metal-containing coating film, and a first film is formed on the metal-containing coating film. An organic coating film, wherein the first organic coating film is formed of a photosensitive organic material and is exposed to a predetermined pattern; and the developing device includes a developing solution supply unit for applying the developing solution. The first organic coating film is supplied to the first organic coating film to form a first organic coating film pattern having the predetermined pattern. The first removing liquid supply unit supplies a first removing liquid for removing metal to the first organic coating. A film pattern and the metal-containing coating film, thereby forming a metal-containing coating film pattern having the predetermined pattern; and a cleaning liquid supply unit that supplies the cleaning liquid to the substrate having the first organic coating film pattern and the metal-containing coating film. The substrate of the film pattern is applied.         The imaging device according to claim 1, wherein the first removal liquid system includes an aqueous solution, an alkaline aqueous solution, or an acidic aqueous solution to which a chelating agent is added.         The imaging device according to claim 2, wherein the chelating agent comprises a derivative of an organic acid, an organic acid salt, an amino acid, an amino acid derivative, an inorganic base, a salt of an inorganic base, an alkylamine, or an alkylamine One or a plurality of types selected from the group consisting of a substance, an alkanolamine and a derivative of an alkanolamine.         A developing device is used for developing a substrate; a film containing a metal-containing coating liquid is formed on one surface of the substrate as a metal-containing coating film, and a first film is formed on the metal-containing coating film. An organic coating film, wherein the first organic coating film is formed by a photosensitive organic material and is exposed to a predetermined pattern; the developing device has a first removing liquid supply unit for removing metal The first removing solution is supplied to the first organic coating film and the metal-containing coating film, thereby forming a first organic coating film pattern having the predetermined pattern and a metal-containing coating film having the predetermined pattern. A pattern; and a cleaning liquid supply unit that supplies the cleaning liquid to the substrate having the first organic coating film pattern and the metal-containing coating film pattern.         The imaging device according to claim 4, wherein the first removal liquid contains an alkaline aqueous solution.         The developing device according to any one of claims 1 to 5, further comprising: a rotation holding portion that holds the substrate and rotates the substrate after the cleaning liquid is supplied by the cleaning liquid supply portion.         The developing device according to any one of claims 1 to 5, further comprising: a second removal liquid supply unit configured to supply the first removal liquid to the first removal liquid supply unit and to receive the cleaning liquid. The substrate is supplied with a second removal liquid for removing the first organic coating film pattern from the substrate before the supply portion supplies the cleaning liquid.         The developing device according to any one of claims 1 to 5, wherein a second organic coating film is further formed between the one surface of the substrate and the metal-containing coating film.         The imaging device according to claim 8, further comprising: a third removal liquid supply unit configured to supply the cleaning liquid to the cleaning liquid supply unit after the first removal liquid is supplied by the first removal liquid supply unit and the cleaning liquid supply unit. The foregoing substrate is supplied with a third removing solution for removing the second organic coating film, thereby forming a second organic coating film pattern having the predetermined pattern.         A substrate processing apparatus is disposed adjacent to an exposure apparatus for exposing a substrate. The substrate processing apparatus includes a metal-containing coating film forming section and supplies a metal-containing coating liquid as a metal-containing coating liquid. To a surface of the substrate, thereby forming a metal-containing coating film on the one surface; the first organic coating film forming section supplies a first organic coating liquid formed of a photosensitive material to the metal-containing coating Coating the film, thereby forming a first organic coating film on the metal-containing coating film formed by the metal-containing coating film forming section; and the display according to any one of claims 1 to 5. The imaging device performs development processing on the substrate on which the first organic coating film formed by the first organic coating film forming portion is exposed to a predetermined pattern by the exposure device.         The substrate processing apparatus according to claim 10, further comprising: a second organic coating film forming portion, wherein the metal-containing coating is formed on the one surface of the substrate by the metal-containing coating film forming portion. Before the film is laid, a second organic coating film is formed between the first surface and the metal-containing coating film by supplying a second organic coating liquid to the one surface of the substrate.         A developing method is used for developing a substrate; a film containing a metal-containing coating liquid is formed on one surface of the substrate as a metal-containing coating film, and a first film is formed on the metal-containing coating film. An organic coating film, wherein the first organic coating film is formed of a photosensitive organic material and is exposed to a predetermined pattern; and the developing method includes: supplying a developing solution by a developing solution supply unit. To the first organic coating film, thereby forming a first organic coating film pattern having the predetermined pattern; and supplying a first removing liquid for removing metal to the first through a first removing liquid supply unit. An organic coating film pattern and the metal-containing coating film, thereby forming a metal-containing coating film pattern having the predetermined pattern; and supplying a cleaning solution to the first organic coating having the first organic coating by a cleaning solution supply unit. A step of fabricating a film pattern and the substrate of the metal-containing coating film pattern.         A developing method is used for developing a substrate; a film containing a metal-containing coating solution is formed on one surface of the substrate as a metal-containing coating film, and a first layer is formed on the metal-containing coating film. An organic coating film, wherein the first organic coating film is formed of a photosensitive organic material and is exposed to a predetermined pattern; the developing method includes: removing the metal by a first removing liquid supply unit; Of the first removing solution is supplied to the first organic coating film and the metal-containing coating film to form a first organic coating film pattern having the predetermined pattern and a metal-containing coating film pattern having the predetermined pattern. A step of supplying a cleaning liquid to the substrate having the first organic coating film pattern and the metal-containing coating film pattern by a cleaning liquid supply unit.         The developing method according to claim 12 or 13, further comprising a step of holding and rotating the substrate after the cleaning liquid is supplied by the cleaning liquid supply portion by the rotation holding portion and rotating the substrate.         A substrate processing method using an exposure device for exposing a substrate, the substrate processing method includes: supplying a metal-containing coating liquid as a metal-containing coating liquid to the substrate through a metal-containing coating film forming section; A surface, thereby forming a metal-containing coating film on the aforementioned one surface; and supplying a first organic coating liquid formed of a photosensitive material by the first organic coating film forming portion to The step of forming a first organic coating film on the metal-containing coating film formed by the metal-containing coating film forming section, the metal-containing coating film formed by the metal-coating film forming section; and The first organic coating film formed by the first organic coating film forming portion is exposed to a predetermined pattern by the exposure device, and the substrate is developed using the developing method according to claim 12 or 13. Like processing steps.         The substrate processing method according to claim 15, further comprising: supplying a second organic coating liquid to the first substrate by a second organic coating film forming unit before the step of forming the metal-containing coating film. Step of forming a second organic coating film between the one surface and the metal-containing coating film.