TW201825203A - Method and device for washing substrate with high-temperature chemical and ultrasonic device capable of effectively reducing the bubbles contained in the high-temperature chemical solution - Google Patents

Abstract

The invention discloses a high-temperature chemical solution liquid supply system for cleaning a substrate. The system includes a solution tank, a buffer tank, a first pump, and a second pump. The solution tank contains a high-temperature chemical solution. The buffer tank has a tank body, an exhaust pipe, and a needle valve. The tank contains a high-temperature chemical solution. One end of the exhaust pipe is connected to the tank body, and the other end of the exhaust pipe is connected to the solution tank. The needle valve is installed on the exhaust pipe. Through adjusting the needle valve to achieve a flow rate, the air bubbles in the high-temperature chemical solution pass through the exhaust pipe and exit the buffer tank. The inlet of the first pump is connected to the solution tank, and the outlet of the first pump is connected to the buffer tank. The inlet of the second pump is connected to the buffer tank, and the outlet of the second pump is connected to the cleaning chamber for cleaning the substrate. The invention also provides a substrate cleaning device including a high-temperature chemical solution supply system and an ultrasonic / megasonic device. The invention also provides a method for cleaning the substrate.

Description

   Method and device for cleaning substrate using high temperature chemical and ultrasonic device   

The present invention relates to a substrate cleaning method and apparatus, and more particularly, to reducing air bubbles in a high-temperature chemical solution such as SC1, and reducing bubbles generated or agglomerated during cleaning of a substrate by supplying the high-temperature chemical solution to a single-chip cleaning machine having an ultrasonic device.

During the semiconductor device manufacturing process, particles on the substrate surface need to be removed or cleaned before proceeding to the next process. For example, after CMP (chemical mechanical planarization), the polishing liquid and residues on the substrate surface are very difficult to remove. These particles are usually removed using high-temperature sulfuric acid (SPM). However, sulfuric acid is not only difficult to operate safely, but the waste liquid treatment of sulfuric acid is very expensive. Hot SC1 (including hydrogen peroxide, ammonia and water) is a very good choice to replace hot sulfuric acid, but in order to effectively remove particles, the temperature of SC1 needs to be heated above 80 ° C.

When SC1 reaches such a high temperature, SC1 chemicals are pumped through low pressure, mechanically agitated, and heated. The hydrogen peroxide and ammonia in SC1 are easily decomposed into oxygen and ammonia. These bubble-filled SC1s can easily cause the pump, heater, flow meter, and ultrasonic equipment to lose their functions during the cleaning process.

Therefore, in the process of mixing, heating, conveying and final cleaning, while applying ultrasonic energy to the substrate, a better method is needed to control the air bubbles in the high-temperature chemical solution.

The invention provides a high-temperature chemical solution liquid supply system for cleaning a substrate. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains a high-temperature chemical solution. The buffer tank has a tank body, an exhaust pipe, and a needle valve. The tank body contains a high-temperature chemical solution. One end of the exhaust pipe is connected to the tank body, and the other end of the exhaust pipe is connected to the solution tank. The needle valve is installed on the exhaust pipe. By adjusting the needle valve to achieve a flow rate, the air bubbles in the high-temperature chemical solution are discharged through the exhaust pipe to the buffer tank. The inlet of the first pump is connected to the solution tank, and the outlet of the first pump is connected to the buffer tank. The inlet of the second pump is connected to the buffer tank, and the outlet of the second pump is connected to the cleaning chamber for cleaning the substrate.

The invention also provides a device for cleaning a substrate. The device includes a solution tank, a buffer tank, a first pump, a second pump, a substrate chuck, a rotary driving device, a nozzle, an ultrasonic / megasonic device, and a vertical driver. The solution tank contains a high-temperature chemical solution. The buffer tank has a tank body, an exhaust pipe, and a needle valve. The tank body contains a high-temperature chemical solution. One end of the exhaust pipe is connected to the tank body, and the other end of the exhaust pipe is connected to the solution tank. The needle valve is installed on the exhaust pipe. By adjusting the needle valve to achieve a flow rate, the air bubbles in the high-temperature chemical solution are discharged through the exhaust pipe to the buffer tank. The inlet of the first pump is connected to the solution tank, and the outlet of the first pump is connected to the buffer tank. The inlet of the second pump is connected to the buffer tank, and the outlet of the second pump is connected to the cleaning chamber for cleaning the substrate. The substrate chuck carries a substrate. The rotation driving device is connected to the substrate chuck and drives the substrate chuck to rotate. The nozzle sprays a high-temperature chemical solution or deionized water onto the substrate surface. The ultrasonic / megasonic device is arranged close to the substrate, and there is a gap between the ultrasonic / megasonic device and the substrate. The vertical driver drives the ultrasonic / megasonic device up or down to change the gap between the substrate and the ultrasonic / megasonic device.

The invention provides a method for cleaning a substrate, comprising: rotating the substrate; spraying deionized water on the surface of the substrate to pre-wet the surface of the substrate; spraying a high-temperature chemical solution on the surface of the substrate to clean the surface of the substrate; Reduce the low speed and move the ultrasonic / megasonic device close to the substrate surface. There is a gap d between the ultrasonic / megasonic device and the substrate surface. The high-temperature chemical solution completely fills the gap d. Open the ultrasonic / megasonic device and Provide a constant or pulsed working power in one cleaning cycle; turn off the ultrasonic / megasonic device, spray high temperature chemical solution or deionized water on the surface of the substrate to release bubbles generated by the ultrasonic / megasonic device, prevent bubbles from accumulating on the substrate surface; turn on the ultrasonic wave / Megasonic device, and provide a constant or pulsed working power in the second cleaning cycle; turn off the ultrasonic / megasonic device, spray chemical liquid or deionized water on the substrate surface; and dry the substrate.

The invention also provides a method for cleaning the substrate, which comprises: rotating the substrate; spraying deionized water on the surface of the substrate to pre-wet the surface of the substrate; spraying a high-temperature chemical solution on the surface of the substrate to clean the surface of the substrate; The speed is reduced to a low speed, and the ultrasonic / megasonic device is moved closer to the substrate surface. There is a gap d between the ultrasonic / megasonic device and the substrate surface, and the high-temperature chemical solution completely fills the gap d. Turn on the ultrasonic / megasonic device and The first cleaning cycle provides constant or pulsed working power; turn off the ultrasonic / megasonic device, raise the ultrasonic / megasonic device, and move the ultrasonic / megasonic device away from the surface of the high-temperature chemical solution to release air bubbles gathered under or around the ultrasonic / megasonic device ; Move the ultrasonic / megasonic device downward with a gap d between the ultrasonic / megasonic device and the substrate surface, then turn on the ultrasonic / megasonic device and provide a constant or pulsed working power during the second cleaning cycle; turn off the ultrasonic / A megasonic device sprays a chemical solution or deionized water on the surface of the substrate; and the substrate is dried.

The invention also provides a method for cleaning the substrate, which comprises: rotating the substrate; spraying deionized water on the surface of the substrate to pre-wet the surface of the substrate; spraying a high-temperature chemical solution or deionized water on the surface of the substrate to clean the surface of the substrate Spray a medium temperature chemical solution or deionized water on the surface of the substrate to clean the substrate surface; reduce the speed of the substrate to a low speed, and move the ultrasonic / megasonic device closer to the surface of the substrate to cooperate with the medium temperature chemical solution The cleaning chemical solution completely fills the gap d between the ultrasonic / megasonic device and the surface of the substrate; turns on the ultrasonic / megasonic device and provides a constant or pulsed working power during the first cleaning cycle; sprays the medium temperature chemical solution on the substrate surface Or deionized water to release the bubbles generated by the medium temperature chemical solution to prevent the bubbles from accumulating on the surface of the substrate; turn on the ultrasonic / megasonic device and provide a constant or pulsed working power during the second cleaning cycle; turn off the ultrasonic / megasonic device to Spray the chemical solution or deionized water on the surface of the substrate; dry the substrate.

1003‧‧‧ Bellows Pump

1033‧‧‧Left bellows room

1035‧‧‧Right bellows room

1037‧‧‧ Bubble

2019‧‧‧The first pump

2021‧‧‧Buffer tank

2022‧‧‧Slot

2023‧‧‧Second Pump

2028‧‧‧Inlet pipe

2029‧‧‧Needle Valve

2030‧‧‧Exhaust pipe

2032‧‧‧ Discharge tube

2034‧‧‧ Bubble Separator

2036‧‧‧Particle Filter

2037‧‧‧ Bubble

3035‧‧‧Second buffer tank

3053‧‧‧Fourth Pump

4001‧‧‧solution tank

4003‧‧‧ Third Pump

4005‧‧‧ thermometer

4007‧‧‧Drain tube

4008‧‧‧controller

4009‧‧‧ Third import

4013‧‧‧Heater

4015‧‧‧Second Import

4017‧‧‧First Import

4019‧‧‧The first pump

4021‧‧‧Buffer tank

4023‧‧‧Second Pump

4029‧‧‧Needle valve

4030‧‧‧Exhaust pipe

5003‧‧‧Ultrasonic / Megasonic Device

5004‧‧‧ Piezoelectric sensor

5005‧‧‧ Lead screw

5006‧‧‧Vertical driver

5007‧‧‧ support beam

5008‧‧‧Acoustic Resonator

5010‧‧‧ substrate

5012‧‧‧Nozzle

5014‧‧‧ Substrate chuck

5016‧‧‧Drive

5032‧‧‧Chemical solution (deionized water)

5088‧‧‧Control Unit

1A-1B describe the working process of a bellows pump according to an exemplary embodiment; FIGS. 2A-2D describe an embodiment of a system having one buffer tank and two pumps; FIG. 3 illustrates two buffer tanks and three pumps; Examples of a pump system; Figure 4 depicts an embodiment of a high temperature chemical mixing, heating, and delivery system; and Figures 5A-5B depict an embodiment of a substrate cleaning device with an ultrasonic / megasonic device.

The invention provides a high-temperature chemical solution liquid supply system for cleaning a substrate. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains a high-temperature chemical solution. The buffer tank has a tank body, an exhaust pipe, and a needle valve. The tank body contains a high-temperature chemical solution. One end of the exhaust pipe is connected to the tank body, and the other end of the exhaust pipe is connected to the solution tank. The needle valve reaches a flow rate so that the air bubbles in the high-temperature chemical solution pass through the exhaust pipe and exit the buffer tank. The inlet of the first pump is connected to the solution tank, and the outlet of the first pump is connected to the buffer tank. The inlet of the second pump is connected to the buffer tank, and the outlet of the second pump is connected to the cleaning chamber for cleaning the substrate.

The invention also provides a device for cleaning the substrate. The device includes a solution tank, a buffer tank, a first pump, a second pump, a substrate chuck, a rotary driving device, a nozzle, an ultrasonic / megasonic device, and a vertical driver. The solution tank contains a high-temperature chemical solution. The buffer tank has a tank body, an exhaust pipe, and a needle valve. The tank body contains a high-temperature chemical solution. One end of the exhaust pipe is connected to the tank body, and the other end of the exhaust pipe is connected to the solution tank. The needle valve is installed on the exhaust pipe and is adjusted through The needle valve reaches a flow rate so that the air bubbles in the high-temperature chemical solution pass through the exhaust pipe and exit the buffer tank. The inlet of the first pump is connected to the solution tank, and the outlet of the first pump is connected to the buffer tank. The inlet of the second pump is connected to the buffer tank, and the outlet of the second pump is connected to the cleaning chamber for cleaning the substrate. The substrate chuck carries a substrate. The rotation driving device is connected to the substrate chuck and drives the substrate chuck to rotate. The nozzle sprays a high-temperature chemical solution or deionized water on the surface of the substrate. The ultrasonic / megasonic device is arranged close to the substrate, and there is a gap between the ultrasonic / megasonic device and the substrate. The vertical driver drives the ultrasonic / megasonic device up or down to change the gap between the substrate and the ultrasonic / megasonic device.

Figures 1A-1B illustrate the working principle of a commonly used bellows pump. The bellows pump 1003 includes a left bellows chamber 1033 and a right bellows chamber 1035. As shown in FIG. 1A, when the air is exhausted, the left bellows chamber 1033 sucks in the liquid. When the liquid is a high-temperature chemical, such as SC1 with a temperature higher than 70 ° C, bubbles 1037 (mainly It is oxygen and ammonia gas decomposed by hydrogen peroxide and ammonia). In the next pumping cycle, when air is supplied, the bubbles 1037 mixed with the chemical solution in the left bellows chamber 1033 will be pushed out of the left bellows chamber 1033, as shown in FIG. 1B. The bubbles 1037 will be compressed to a smaller volume. Therefore, the liquid pressure at the outlet of the pump 1003 will be significantly reduced. In addition, the chemical solution mixed with bubbles 1037 will cause the pump, heater, flow meter and ultrasonic equipment to lose their functions during the cleaning process.

2A-2D show a specific embodiment of a pump system according to the present invention. As shown in FIG. 2A, the system includes a first pump 2019, a buffer tank 2021, a second pump 2023, a needle valve 2029, and an exhaust pipe 2030. The chemical solution pumped from the first pump 2019 includes the above bubbles. These bubbles mixed with the chemical solution will be pumped into the buffer tank 2021. In the buffer tank 2021, the air bubbles rise to the top of the buffer tank 2021, and are then discharged through the needle valve 2029 and the exhaust pipe 2030. The needle valve 2029 needs to be adjusted enough to expel most of the air bubbles while not releasing too much pressure in the buffer tank 2021. By adjusting the output pressure of the first pump 2019, the pressure in the buffer tank 2021 ranges between 5 psi and 20 psi, preferably 10 psi. Then, the chemical solution with a small amount of bubbles in the buffer tank 2021 is pressed into the inlet of the second pump 2023. Since the chemical solution being pressed into the inlet of the second pump 2023 has a certain pressure (approximately set to 10 psi), fewer or fewer air bubbles will be generated during the inhalation of the second pump 2023. Therefore, the pressure at the outlet of the second pump 2023 can be maintained at a high value, and the pressure at the outlet of the second pump 2023 can be set as high as 20-50 psi. Generally, the first pump 2019 can choose a centrifugal pump or a bellows pump. The second pump 2023 is preferably a bellows pump to obtain a higher pressure output.

FIG. 2B shows a specific embodiment of a buffer tank according to the present invention. The buffer tank has a tank body 2022, a liquid inlet pipe 2028, a needle valve 2029, an exhaust pipe 2030, and a liquid outlet pipe 2032. The liquid inlet pipe 2028 and the liquid outlet pipe 2032 are inserted near the bottom of the tank body 2022. The exhaust pipe 2030 is installed on the top of the buffer tank 2021. The air bubbles 2037 in the chemical solution rise and exit the buffer tank 2021 through the exhaust pipe 2030.

FIG. 2C shows another specific embodiment of the buffer tank according to the present invention. The buffer tank is similar to that in FIG. 2B, except that the buffer tank 2021 further includes a bubble separator 2034. The role of the bubble separator 2034 is to prevent the bubbles 2037 output from the liquid inlet pipe 2028 from entering the liquid outlet pipe 2032. The height of the bubble separator 2034 is 50% -80% of the height of the buffer tank, and preferably 70%.

FIG. 2D shows another specific embodiment of the buffer tank according to the present invention. The buffer tank is similar to that in FIG. 2B, except that the buffer tank 2021 further includes a particle filter 2036. The liquid outlet pipe 2032 is installed on the top of the buffer tank 2021 and is located at the outlet of the particle filter 2036. The liquid inlet pipe 2028 is inserted near the bottom of the tank 2022 and is located at the inlet of the particle filter 2036. An exhaust pipe 2030 is installed on the top of the buffer tank 2021 and is located at the inlet of the particulate filter 2036. The role of the particle filter 2036 is to prevent the bubbles 2037 from directly entering the liquid outlet pipe 2032 through the filter membrane, and the bubbles 2037 blocked by the filter membrane are discharged through the exhaust pipe 2030 and the needle valve 2029.

Figure 3 shows another embodiment of the pump system according to the invention. This system is similar to that shown in FIG. 2A, except that the system also includes a second buffer tank 3035 and a fourth pump 3053. The three-pump system enables chemicals to have a higher pressure and a higher flow rate at higher temperatures than a two-pump system. Obviously, more pumps and buffer tanks can be combined to achieve greater pressure and greater flow.

FIG. 4 shows a specific embodiment of the hot chemical solution supply system according to the present invention. The liquid supply system includes a solution tank 4001, a first pump 4019, a buffer tank 4021, a second pump 4023, a third pump 4003, a heater 4013, a thermometer 4005, and a controller 4008. The solution tank 4001 is provided with a first inlet 4017 for entering water, a second inlet 4015 for entering a first chemical liquid such as hydrogen peroxide, and a third inlet 4009 for entering a second chemical liquid such as ammonia. The solution tank 4001 further includes a drain pipe 4007 for discharging the chemical solution out of the solution tank 4001. The outer surface of the solution tank 4001 is covered with a heat-insulating material such as rubber or foam plastic for thermal insulation, and all are connected to the solution tank 4001, the first pump 4019, the buffer tank 4021, the second pump 4023, the third pump 4003, and the heater 4013. The liquid pipes in between are wrapped with the same insulation material.

The working steps of the high-temperature chemical solution supply system are as follows: Step 1: Inject the required amount of water (deionized water) into the solution tank 4001. In order to shorten the heating time, if the temperature of the final mixed chemical solution needs to be above 60 ° C, then Hot water with a temperature of 60 ° C can be injected; Step 2: Inject the first chemical liquid of desired concentration, such as hydrogen peroxide; Step 3: Inject the second chemical liquid of desired concentration, such as ammonia; Step 4: Open the first Three pumps 4003, the air pressure is set at 20-60psi, preferably 40psi; Step 5: Turn on the heater 4013, set the temperature to T0, the temperature can be set between 35 ℃ -95 ℃; Step 6: When the thermometer 4005 displays the solution When the temperature of the chemical solution in the tank 4001 reaches the set temperature T0, the first pump 4019 is turned on, and the output pressure P1 is set between 5-30 psi, preferably 15 psi; Step 7: Adjust the needle valve 4029 to reach a flow rate just capable of being discharged Bubbles, in order to save chemical liquid, the discharged bubbles mixed with the mixed chemical solution such as SC1 will return to the solution tank 4001 through the exhaust pipe 4030; Step 8: Turn on the second pump 4023 and set the output pressure P2 at 10-80 psi, and P2 is greater than P1; Step 9: Since the second pump 4023 is turned on, the change in pressure P1 may affect the flow of the exhaust pipe 4030. Therefore, readjust the needle valve 4029 to achieve a flow just to discharge air bubbles.

5A-5B illustrate a specific embodiment of a substrate cleaning apparatus having an ultrasonic / megasonic device. The substrate cleaning device includes a substrate 5010, a rotating substrate chuck 5014 driven by a rotation driving device 5016, a nozzle 5012 for spraying a chemical solution or deionized water 5032, and an ultrasonic / megasonic (ultrasonic operating at a frequency of MHZ) device 5003. The ultrasonic / megasonic device 5003 further includes a piezoelectric sensor 5004 and an acoustic resonator 5008 paired with the piezoelectric sensor 5004. When the sensor 5004 is energized and functions as vibration, the resonator 5008 transmits high-frequency acoustic energy to a chemical solution or deionized water 5032. The vibration generated by the megasonic energy loosens the particles on the substrate 5010, and then removes them from the surface of the substrate 5010 through the flowing chemical solution or deionized water 5032 provided by the nozzle 5012.

The substrate cleaning apparatus further includes a support beam 5007, a lead screw 5005, and a vertical driver 5006. The gap d between the ultrasonic / megasonic device 5003 and the substrate 5010 increases or decreases with the rotation of the substrate chuck 5014 during the cleaning process. The control unit 5088 controls the speed of the vertical driver 5006 based on the speed of the rotary driving device 5016.

In a specific embodiment, air bubbles accumulated under or around the ultrasonic / megasonic device 5003 are released through the control gap d. The gap d between the ultrasonic / megasonic device 5003 and the surface of the substrate 5010 is sufficiently high, so the working surface of the ultrasonic / megasonic device 5003 is not immersed in the cleaning chemical solution 5032.

As the ultrasonic / megasonic wave is input into the gap between the substrate 5010 and the ultrasonic / megasonic device 5003, a high-temperature chemical solution such as SC1 at a temperature exceeding 70 ° C will generate bubbles, which will increase the reflected power of the ultrasonic / megasonic device. As a result, the ultrasonic / megasonic power is turned off, and at the same time, a small amount of ultrasonic / megasonic power in the gap will reduce the cleaning effect of the substrate 5010. In addition, air bubbles on the surface of the substrate 5010 may prevent the chemical solution and the ultrasonic / megasonic waves from contacting the substrate 5010, thereby causing uncleaned places and defects on the substrate 5010 to appear.

In order to reduce air bubbles generated during the ultrasonic / megasonic assisted cleaning process, the cleaning process is divided into several stages to reduce air bubbles.

The specific method provided by the present invention includes the following steps: Step 1: The substrate chuck 5014 drives the substrate 5010 to rotate, and the rotation speed is set to 300-1200 rpm, preferably 500 rpm; Step 2: Use the nozzle 5012 to spray on the surface of the substrate 5010. Ionized water is used to pre-wet the surface of the substrate 5010; Step 3: Use a nozzle 5012 to spray a high temperature (greater than 70 ° C) chemical solution, such as SC1, on the surface of the substrate 5010 to clean the surface of the substrate 5010; Step 4: Reduce the rotation speed of the substrate to At a low rotation speed (10-200 rpm), the ultrasonic / megasonic device is moved to a position near the surface of the substrate 5010 with a gap d from the surface of the substrate 5010. The chemical solution completely fills the gap d between the surface of the substrate 5010 and the ultrasonic / megasonic device 5003. In this way, the working surface of the ultrasonic / megasonic device 5003 is immersed in the chemical solution; Step 5: Turn on the ultrasonic / megasonic device 5003 and Provide a constant or pulsed working power during the first cleaning cycle. In this step, the gap d is controlled by the vertical driver 5006. The waveform of the ultrasonic / megasonic power supply is programmable and preset according to the recipe. The trajectory of the gap d is also programmable. And preset according to the recipe.

Step 6: Turn off the ultrasonic / megasonic device. Spray the high-temperature chemical solution or deionized water on the surface of the substrate 5010 to release the air bubbles generated by the ultrasonic / megasonic device in step 5 to prevent the air bubbles from accumulating on the surface of the substrate; in this air bubble releasing step, the type of the chemical solution sprayed may be It is the same as or different from the cleaning chemical solution.

The sprayed chemical solution completely fills the gap d between the surface of the substrate and the ultrasonic / megasonic device, so that the working surface of the ultrasonic / megasonic device is immersed in the chemical solution.

The rotation speed of the substrate can be set higher to better release bubbles.

The gap d can be set larger to better release the bubbles.

The power supply of the ultrasonic / megasonic device can be set lower or completely shut down to better release bubbles.

For the sake of throughput, the time of the bubble release step can be set to several seconds.

Step 7: Turn on the ultrasonic / megasonic wave device 5003 and provide a constant or pulsed working power during the second cleaning cycle. In this step, the gap d is controlled by the vertical driver 5006; The trajectory of the change in the gap d is also programmable and preset according to the recipe.

Steps 6 and 7 can be repeated continuously to enhance the cleaning effect.

The first cleaning cycle and the second cleaning cycle are repeated multiple times, and a bubble release step is set between every two cleaning cycles. The first cleaning cycle and the second cleaning cycle may be the same or different.

Step 8: Turn off the ultrasonic / megasonic device 5003, and use a nozzle 5012 to spray a chemical solution or deionized water onto the substrate 5010; Step 9: dry the substrate 5010.

Another method provided by the present invention for preventing bubbles from being generated in the ultrasonic / megasonic assisted cleaning process includes the following steps:

Step 1: The substrate chuck 5014 drives the substrate 5010 to rotate, and the rotation speed is set to 300-1200 rpm, preferably 500 rpm.

Step 2: Use nozzle 5012 to spray the surface of substrate 5010 with deionized water to pre-wet the surface of substrate 5010. Step 3: Use nozzle 5012 to spray the surface of substrate 5010 with a high temperature (greater than 70 ° C) chemical solution such as SC1 to clean substrate 5010. Surface; step 4: reduce the rotation speed of the substrate to a low rotation speed (10-200 rpm), move the ultrasonic / megasonic device 5003 to a position near the surface of the substrate 5010 with a gap d between the surface of the substrate 5010, and a chemical solution The gap between the surface of the substrate 5010 and the ultrasonic / megasonic device 5003 is completely filled. In this way, the working surface of the ultrasonic / megasonic device 5003 is immersed in a chemical solution; Step 5: Open the ultrasonic / megasonic device 5003 and clean it in the first Provide constant or pulse working power periodically. In this step, the gap d is controlled by the vertical driver 5006. The waveform of the ultrasonic / megasonic power supply is programmable and preset according to the formula. The trajectory of the gap d is also programmable and based on the formula. Assume.

Step 6: Turn off the ultrasonic / megasonic device, and then raise the ultrasonic / megasonic device to move the ultrasonic / megasonic device away from the surface of the high-temperature chemical solution to release air bubbles accumulated under or around the ultrasonic / megasonic device.

In the bubble release step, the sprayed chemical solution may be the same as or different from the cleaning chemical solution.

The ultrasonic / megasonic device is raised, and the gap d between the ultrasonic / megasonic device and the surface of the substrate is sufficiently high, so that the working surface of the ultrasonic / megasonic device is not immersed in the cleaning chemical solution.

The rotation speed of the substrate can be set higher to better release bubbles.

The power supply of the ultrasonic / megasonic device can be set lower or completely shut down to better release bubbles.

For the sake of throughput, the time of the bubble release step can be set to several seconds.

Step 7: Move the ultrasonic / megasonic device 5003 downward so that there is a gap d between the ultrasonic / megasonic device and the substrate 5010, then turn on the ultrasonic / megasonic device 5003 and provide a constant or pulsed working power during the second cleaning cycle. In this step, the gap d is controlled by the vertical driver 5006.

The waveform of the ultrasonic / megasonic power supply is programmable and preset according to the recipe, and the trajectory of the gap d change is also programmable and preset according to the recipe.

Steps 6 and 7 can be repeated continuously to enhance the cleaning effect.

The first cleaning cycle and the second cleaning cycle are repeated multiple times, and a bubble release step is set between every two cleaning cycles. The first cleaning cycle and the second cleaning cycle may be the same or different.

Step 8: Turn off the ultrasonic / megasonic device 5003, and spray the chemical solution or deionized water on the substrate 5010.

Step 9: Dry the substrate 5010.

Another method provided by the present invention for preventing bubbles from being generated in the ultrasonic / megasonic wave assisted cleaning process includes the following steps:

Step 1: The substrate chuck 5014 drives the substrate 5010 to rotate, and the rotation speed is set to 300-1200 rpm, preferably 500 rpm.

Step 2: Spray the deionized water on the surface of the substrate 5010 using the nozzle 5012 to pre-wet the surface of the substrate 5010.

Step 3: Use a scanning nozzle to spray a high-temperature chemical solution or deionized water on the surface of the substrate 5010. The scanning path is programmable and set according to the recipe.

Step 4: Spray a medium temperature chemical solution (25 ° C-70 ° C) or deionized water on the surface of the substrate 5010 to clean the surface of the substrate 5010.

The kind of the medium-temperature chemical solution and the kind of the high-temperature chemical solution may be the same or different.

Step 5: Reduce the rotation speed of the substrate to a low rotation speed (10-500rpm), move the ultrasonic / megasonic device 5003 to a position near the surface of the substrate 5010, cooperate with the medium-temperature chemical solution, and completely fill the ultrasonic / The gap d between the megasonic device and the surface of the substrate is such that the working surface of the ultrasonic / megasonic device is immersed in a chemical solution.

Step 6: Turn on the ultrasonic / megasonic device and provide a constant or pulsed working power during the first cleaning cycle. In this step, the gap d is controlled by a vertical driver.

The waveform of the ultrasonic / megasonic power supply is programmable and preset according to the recipe, and the trajectory of the gap d change is also programmable and preset according to the recipe.

Step 7: Spray the medium-temperature chemical solution or deionized water on the surface of the substrate to release bubbles generated by the medium-temperature chemical solution, thereby preventing bubbles from accumulating on the substrate surface.

In the bubble release step, the type of the sprayed chemical solution may be the same as or different from the type of the cleaning chemical solution.

The rotation speed of the substrate can be set higher to better release bubbles.

The gap d can be set larger to better release the bubbles.

The power supply of the ultrasonic / megasonic device can be set lower or completely shut down to better release bubbles.

For the sake of throughput, the time of the bubble release step can be set to several seconds.

Step 8: Turn on the ultrasonic / megasonic device and provide a constant or pulsed working power during the second cleaning cycle. In this step, the gap d is controlled by a vertical driver.

The waveform of the ultrasonic / megasonic power supply is programmable and preset according to the recipe, and the trajectory of the gap d change is also programmable and preset according to the recipe.

Steps 7 and 8 can be repeated continuously to enhance the cleaning effect.

The first cleaning cycle and the second cleaning cycle are repeated multiple times, and a bubble release step is set between every two cleaning cycles. The first cleaning cycle and the second cleaning cycle may be the same or different.

Step 9: Turn off the ultrasonic / megasonic device and spray the chemical solution or deionized water on the substrate.

Step 10: Dry the substrate.

Claims (29)

    A high-temperature chemical solution liquid supply system for cleaning a substrate includes a solution tank containing a high-temperature chemical solution, and a buffer tank including a tank body, an exhaust pipe, and a needle valve. The tank contains the high-temperature chemical solution, and one end of the exhaust pipe Connect the tank body, the other end of the exhaust pipe is connected to the solution tank, and the needle valve is installed on the exhaust pipe. By adjusting the needle valve to achieve a flow rate, the air bubbles in the high-temperature chemical solution pass through the exhaust pipe to exit the buffer tank; The inlet of the first pump is connected to the solution tank, the outlet of the first pump is connected to the buffer tank; and the second pump, the inlet of the second pump is connected to the buffer tank, and the outlet of the second pump is connected to the cleaning chamber for cleaning the substrate.         The liquid supply system according to claim 1, further comprising a third pump and a heater, the third pump is connected to the solution tank and the heater, and the heater is connected to the solution tank.         The liquid supply system according to claim 1, further comprising a thermometer and a controller.         The liquid supply system according to claim 1, wherein the solution tank has a first inlet for deionized water, a second inlet for the first chemical liquid, and a second inlet for the second chemical liquid. Third import.         The liquid supply system according to claim 4, wherein the first chemical liquid is hydrogen peroxide and the second chemical liquid is ammonia.         The liquid supply system according to claim 1, wherein the buffer tank further includes a liquid inlet pipe and a liquid outlet pipe, the liquid inlet pipe and the liquid outlet pipe are inserted near the bottom of the tank body, and the exhaust pipe is installed in the buffer tank. At the top, air bubbles in the high-temperature chemical solution rise and exit the buffer tank through the exhaust pipe.         The liquid supply system according to claim 6, wherein the buffer tank further includes a bubble separator to prevent air bubbles output from the liquid inlet pipe from entering the liquid outlet pipe.         The liquid supply system according to claim 1, wherein the buffer tank further includes a liquid inlet pipe, a liquid outlet pipe, and a particle screening program, and the liquid inlet pipe is inserted near the bottom of the tank and located at the inlet of the particle screening program. The liquid outlet pipe is installed on the top of the buffer tank and located at the outlet of the particle screening program, and the exhaust pipe is installed on the top of the buffer tank and located at the inlet of the particle screening program.         The liquid supply system according to claim 1, further comprising at least one second buffer tank and at least one fourth pump provided between the outlet of the second pump and the cleaning chamber.         The liquid supply system according to claim 1, wherein an outer surface of the solution tank is covered with a heat insulating material.         A substrate cleaning device includes a solution tank containing a high-temperature chemical solution; a buffer tank including a tank body, an exhaust pipe, and a needle valve; the tank body contains a high-temperature chemical solution; one end of the exhaust pipe is connected to the tank body; The other end is connected to the solution tank, and the needle valve is installed on the exhaust pipe. Through adjusting the needle valve to achieve a flow rate, the air bubbles in the high-temperature chemical solution are discharged through the exhaust pipe to the buffer tank; the first pump, the inlet of the first pump is connected to the solution tank The outlet of the first pump is connected to the buffer tank; the inlet of the second pump and the second pump is connected to the buffer tank; the outlet of the second pump is connected to the cleaning chamber for cleaning the substrate; the substrate chuck carries the substrate; the rotary driving device is connected The substrate chuck drives the substrate chuck to rotate; a nozzle sprays a high-temperature chemical solution or deionized water on the surface of the substrate; an ultrasonic / megasonic device is arranged near the substrate, and the substrate and the ultrasonic / megasonic device There is a gap between them; a vertical driver drives the ultrasonic / megasonic device to rise or fall to change the gap between the substrate and the ultrasonic / megasonic device.         A substrate cleaning method includes: rotating a substrate; spraying deionized water on a surface of the substrate to pre-wet the substrate surface; spraying a high-temperature chemical solution on the surface of the substrate to clean the substrate surface; and reducing the speed of the substrate to a low speed , Move the ultrasonic / megasonic device to a position close to the substrate surface with a gap d between the substrate surface and the high-temperature chemical solution completely fills the gap d; turn on the ultrasonic / megasonic device and provide a constant or pulse during the first cleaning cycle Working power supply; turn off the ultrasonic / megasonic device, spray high temperature chemical solution or deionized water on the surface of the substrate to release bubbles generated by the ultrasonic / megasonic device, prevent bubbles from accumulating on the substrate surface; turn on the ultrasonic / megasonic device and Two cleaning cycles provide constant or pulsed working power; turn off the ultrasonic / megasonic device, spray chemical liquid or deionized water on the substrate surface; and dry the substrate.         The method according to claim 12, wherein the high-temperature chemical solution is high-temperature SC1.         The method according to claim 12, characterized in that in the step of turning on the ultrasonic / megasonic device and providing a constant or pulsed working power during the first cleaning cycle, the gap d is controlled by a vertical driver, and the ultrasonic / megasonic power The waveform is programmable and preset, and the trajectory of the change in the gap d is also programmable and preset.         The method according to claim 12, characterized in that, in the bubble release step, the type of the sprayed chemical solution is the same as the type of the cleaning chemical solution, and may be different from the type of the cleaning chemical solution.         The method according to claim 12, characterized in that the first cleaning cycle and the second cleaning cycle are repeated a plurality of times, and a step of releasing bubbles is provided between every two cleaning cycles.         The method according to claim 16, wherein the first cleaning cycle and the second cleaning cycle are the same.         The method according to claim 16, wherein the first cleaning cycle and the second cleaning cycle are different.         A substrate cleaning method includes: rotating a substrate; spraying deionized water on a surface of the substrate to pre-wet the substrate surface; spraying a high-temperature chemical solution on the surface of the substrate to clean the substrate surface; and reducing the speed of the substrate to a low speed , Move the ultrasonic / megasonic device to a position close to the substrate surface with a gap d between the substrate surface and the high-temperature chemical solution completely fills the gap d; turn on the ultrasonic / megasonic device and provide a constant or pulse during the first cleaning cycle Working power; turn off the ultrasonic / megasonic device, raise the ultrasonic / megasonic device, and make the ultrasonic / megasonic device leave the surface of the high temperature chemical solution to release the air bubbles gathered under and around the ultrasonic / megasonic device; move the ultrasonic / megasonic wave downward The device has a gap d between the ultrasonic / megasonic device and the surface of the substrate, and then turns on the ultrasonic / megasonic device and provides a constant or pulsed working power during the second cleaning cycle; turns off the ultrasonic / megasonic device and sprays the chemical on the substrate surface Chemical solution or deionized water; dry the substrate.         The method according to claim 19, characterized in that the ultrasonic / megasonic device is raised and the gap d between the ultrasonic / megasonic device and the substrate surface is controlled so that the working surface of the ultrasonic / megasonic device is not immersed in a chemical solution in.         The method according to claim 19, characterized in that the first cleaning cycle and the second cleaning cycle are repeated a plurality of times, and a step of releasing bubbles is provided between every two cleaning cycles.         The method according to claim 21, wherein the first cleaning cycle and the second cleaning cycle are the same.         The method according to claim 21, wherein the first cleaning cycle and the second cleaning cycle are different.         A substrate cleaning method includes: rotating a substrate; spraying deionized water on a substrate surface to pre-wet the substrate surface; spraying a high-temperature chemical solution or deionized water on a substrate surface to clean a substrate surface; and spraying the substrate surface Medium temperature chemical solution or deionized water to clean the surface of the substrate; reduce the speed of the substrate to a low speed, move the ultrasonic / megasonic device to a position near the surface of the substrate, cooperate with the medium temperature chemical solution to clean the chemical solution Completely fill the gap d between the ultrasonic / megasonic device and the surface of the substrate; turn on the ultrasonic / megasonic device and provide a constant or pulsed working power during the first cleaning cycle; spray a medium temperature chemical solution or deionized water on the substrate surface to Release the bubbles generated by the medium temperature chemical solution to prevent the bubbles from accumulating on the substrate surface; turn on the ultrasonic / megasonic device and provide a constant or pulsed working power during the second cleaning cycle; turn off the ultrasonic / megasonic device and spray the chemical on the substrate surface Liquid or deionized water; dry the substrate.         The method according to claim 24, wherein the type of the medium-temperature chemical solution is the same as the type of the high-temperature chemical solution or the type of the high-temperature chemical solution is different.         The method according to claim 24, wherein in the bubble release step, the type of the chemical solution sprayed is the same as the cleaning chemical solution, and may be different from the cleaning chemical solution.         The method according to claim 24, characterized in that the first cleaning cycle and the second cleaning cycle are repeated a plurality of times, and a step of releasing bubbles is provided between every two cleaning cycles.         The method according to claim 27, wherein the first cleaning cycle and the second cleaning cycle are the same.         The method according to claim 27, wherein the first cleaning cycle and the second cleaning cycle are different.