TW201813812A - Flexible electronic device - Google Patents

Abstract

A flexible electronic device may include a flexible substrate, an element layer, and a gas barrier flat layer. The element layer is located on the flexible substrate and has an upper surface, and the maximum height difference of the upper surface in the film layer stacking direction is less than or equal to 900 nm. The gas barrier flat layer covers the element layer and the flexible substrate, and has a flat surface with a cover surface and an opposite cover surface. The water vapor permeability of the flat gas barrier layer is less than or equal to 10 ^-2 g/m²-day.

Description

Flexible electronic device

The present invention relates to an electronic device, and more particularly, to a flexible electronic device.

Compared with the general rigid package structure, the application of flexible electronic devices is more extensive. In order to make the flexible electronic device have better characteristics of blocking moisture and oxygen, the prior art has proposed a flexible electronic device with a gas barrier material layer, so as to improve the reliability of electronic components.

In general, conventional gas barrier material layers can be made of inorganic materials, such as plasma-enhanced chemical vapor deposition (PECVD) and / or atomic layer deposition (ALD). A film layer is formed, and the resulting gas barrier material layer usually has a poor planarization function. Furthermore, organic materials can be used for the conventional flat layer, and the situation of insufficient gas blocking ability must be considered. How to improve the gas barrier effect of the flat layer without increasing the thickness of the thin film deposition process is really one of the concerns of the developers.

An embodiment of the present invention provides a flexible electronic device, which can solve the problems existing in the conventional flat layer.

An embodiment of the present invention provides a flexible electronic device, which includes a flexible substrate, an element layer, and a gas barrier flat layer. The element layer is located on the flexible substrate and has an upper surface. The maximum height difference of the upper surface in the film stacking direction is less than or equal to 900 nm. The first gas barrier flat layer covers the element layer and the flexible substrate, and has a flat surface with a covering surface and an opposite covering surface. The water vapor transmission rate of the first gas barrier flat layer is less than or equal to 10 ^-2 g / m ² -day.

Another embodiment of the present invention provides a flexible electronic device, which includes a first panel, a second panel, and an attaching layer. The first panel includes a flexible substrate, an element layer, and a gas barrier flat layer. The element layer is located on a flexible substrate. The gas barrier flat layer covers the element layer and the flexible substrate, and has a flat surface with a covering surface and a relative covering surface. The gas barrier flat layer has an oxygen-rich region and a nitrogen-rich region, and the oxygen-rich region is close to the covering surface of the gas barrier flat layer. The nitrogen-rich region is close to the flat surface of the gas barrier flat layer. The adhesive layer is interposed between the first panel and the second panel and is in contact with the flat surface of the gas barrier flat layer and the second panel.

In one embodiment of the present invention, the flexible electronic device has a flat gas barrier layer, and the flat gas barrier layer has a nitrogen-rich region having a gas barrier function. The gas barrier flat layer according to the embodiment of the present invention can improve the gas barrier function of the conventional flat layer, and further can achieve the gas barrier and planarization effects from a single deposited film layer.

In order to make the present invention more comprehensible, embodiments are described below in detail with reference to the accompanying drawings.

The embodiments of the present invention are used herein as a reference to facilitate a more complete description of the concept of the present invention, and are described in detail below with reference to the accompanying drawings. The same reference numerals used in the drawings and description refer to the same or similar elements.

1A to 1C are cross-sectional views of a manufacturing process of a flexible electronic device according to an embodiment of the present invention. FIG. 1A to FIG. 1C illustrate how the present invention should be applied to a touch panel, and is intended to facilitate the description of the structure of the electronic device 100 of the present invention, but the present invention is not limited thereto. In fact, the technology of the present invention can also be applied to other electronic devices, such as liquid crystal display panels, organic light-emitting display panels, and electrophoretic display panels.

Please refer to FIG. 1A first. First, a flexible substrate 102 is provided. The material of the flexible substrate 102 may be an organic material or an inorganic material. Organic materials are, for example, polyimide (PI), polycarbonate (PC), polyamide (PA), polyethylene terephthalate (PET), and polyethylene naphthalate. Polyethylene naphthalate (PEN), polyethyleneimine (PEI), polyurethane (PU), polydimethylsiloxane (PDMS), acrylic polymerization The substance is, for example, polymethylmethacrylate (PMMA), etc., and the ether polymer is, for example, polyethersulfone (PES) or polyetheretherketone (PEEK), etc., and a polyolefin Or other flexible organic materials. The inorganic material is, for example, another flexible inorganic material such as metal or glass.

Next, a buffer layer 104 can be selectively formed on the flexible substrate 102, and the buffer layer 104 can completely cover the upper surface of the flexible substrate 102. The material of the buffer layer 104 includes silicon nitride, silicon oxynitride, or a combination thereof, or other transparent buffer materials, but the present invention is not limited thereto.

A conductive layer 106 may be formed on the buffer layer 104. The method for forming the conductive layer 106 is, for example, depositing a layer of conductive material (not shown), and then patterning the conductive material by a lithographic etching process to define a plurality of electrode patterns. The material of the conductive layer 106 may include indium tin oxide (ITO), indium zinc oxide (IZO), Al doped ZnO (AZO), and Ga doped zinc (GZO), Zinc-Tin Oxide (ZTO), fluorine-doped tin oxide (FTO), indium oxide (In ₂ O ₃ ), zinc oxide (ZnO), tin dioxide (SnO ₂ ), titanium oxide (TiO ₂ ), organic conductive polymer, or other transparent conductive materials, but the present invention is not limited thereto.

An insulating layer 108 is formed on the conductive layer 106. The insulating layer 108 is formed by, for example, using a chemical vapor deposition (CVD) method to form an insulating material layer (not shown), and then patterning the insulating material layer by a lithography etching process to form a plurality of exposed conductive layers. The opening of the layer 106. Or, for example, after the insulating layer material is formed by a wet coating process, the lithographic etching process is used to pattern the insulating material layer to form a plurality of openings exposing the conductive layer 106. The material of the insulating layer 108 includes an insulating material containing an ester group, such as an acrylic resin, or an inorganic oxide, inorganic nitride, or inorganic oxynitride, such as silicon oxide, silicon nitride, Silicon oxynitride.

A metal layer 110 is formed on the insulating layer 108. The method for forming the metal layer 110 is, for example, forming a metal material by a deposition method, and then patterning the metal material by a lithography etching process to define a metal pattern. The metal layer 110 may cover a part of the insulating layer 108 and contact the conductive layer 106 through the opening of the insulating layer 108.

As shown in FIG. 1A, according to an embodiment, the maximum height difference ΔH of the upper surface of the element layer 112 along the film stacking direction d is, for example, 900 nm or less, preferably 600 nm or less, and more preferably It is less than or equal to 300 nm. The element layer 112 formed on the flexible substrate 102 is a non-planar film layer stack structure, so that the imaginary connection line (ie, the neutral axis) N1 where the internal stress of the film layer stacking direction d is 0 appears high and low. In general, the height y̅ of the neutral axis N1 at a specific position in the film stacking direction d can be expressed by (Equation 1): ......... .. (Formula 1) the length L _i of equivalent structures corresponding to the i-th layer in a specific position by Young's modulus, W _i is the i-th layer thickness specific position, H _i for the particular location The height of the i-th film layer at the center point of the film stacking direction.

From the calculation result of (Equation 1), the specific position where the film stack height is high, for example, is a region containing a pattern layer, and the height y̅ of the neutral axis N1 is higher; In the area containing the pattern layer, the height y̅ of the neutral axis N1 is low. That is, before the electronic device 100 is not flattened, the neutral axis N1 has a large difference in height y. If the local neutral axis N1 height y is too large, it is easy to cause the component layer 112 to fail during the flexing process, such as electrical failure or physical characteristics (such as gas barrier effect) failure. A flatness is formed on the flexible substrate 102 and the component layer 112. Layer to achieve flattening and reduce the local height y̅ difference of the neutral axis.

Referring to FIG. 1B, after the flexible substrate 102 and the element layer 112 are formed, a first gas barrier flat structure 114 p may be formed on the flexible substrate 102 and the element layer 112 by a solution coating method. The material of the first gas barrier flat structure 114p is, for example, polysilazane polysiloxane, polysiloxazane, or other suitable materials. The maximum height difference ΔH of the upper surface of the element layer 112 along the film stacking direction d is, for example, 900 nm or less, preferably 600 nm or less, and more preferably 300 nm or less. The formation of the gas-flat structure 114p can achieve planarization. After that, the solution-coated first gas barrier flat structure 114p is cured. Plasma-based ion implantation (PBII) is performed on the first gas-blocking flat structure 114p. The gas used for the plasma ion implantation includes inert gas, H ₂ , N ₂ , O ₂ , F, and Cl _{2. The} plasma energy is, for example, −2 kV or more, and the plasma treatment time is, for example, 100 seconds or more.

Please refer to FIG. 1A and FIG. 1B at the same time. According to the aforementioned planarization process, the neutral axis N1 of FIG. 1A can be adjusted to the neutral axis N2 of FIG. 1B. The neutral axis N2 has lower fluctuations relative to the neutral axis N1, so it can avoid the failure of the electronic device during the flexing process.

Referring again to FIG. 1C, after the first gas-blocking flat structure 114p in the aforementioned electronic device 100 is implanted with plasma ions, the first gas-blocking flat structure 114p forms a distribution of decreasing gradient of nitrogen atom concentration from the top to form the first A gas barrier flat layer 114.

More specifically, in FIG. 1C, the upper surface of the first gas barrier flat layer 114 is a flat first flat surface 114c, and the lower surface of the first gas barrier flat layer 114 is a layer covering the flexible substrate 102 or / and the device. The first covering surface 114d of the layer 112. A region of the first gas barrier flat layer 114 near the first flat surface 114c is a first nitrogen-rich region 114a. The foregoing plasma ion implantation can form a nitrogen atom concentration gradient. The first nitrogen-rich region 114a has a higher nitrogen atom concentration, and the material thereof is, for example, polysilazane.

By virtue of the material gas-barrier characteristic of the first nitrogen-rich region 114a in the first gas-barrier flat layer 114, the water-gas permeability of the first gas-barrier flat layer 114 is, for example, less than or equal to 10 ^-2 g / m ^2- The day is preferably 10 ^-5 g / m 2 -day or less. The first gas barrier flat layer 114 may have both a planarization effect and a gas barrier effect. A region of the first gas barrier flat layer 114 near the first covering surface 114d is a first oxygen-rich region 114b. It is worth mentioning that, considering that the electronic device 100 is flexible, the Young's coefficient of the first gas barrier flat layer 114 may be, for example, 3 Gpa to 10 Gpa.

Since the aforementioned plasma ion implantation forms a gradient of nitrogen atom concentration, the first oxygen-rich region 114b has a higher oxygen atom concentration. The first oxygen-rich region 114b may have better adhesion with the insulating layer 108 containing an ester group, for example.

FIG. 2 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. Referring to FIG. 2, the electronic device 200 includes a flexible substrate 102, an element layer 112, a first gas barrier flat layer 114, a carrier 202, and a release layer 204. In FIG. 2, the flexible substrate 102 and the element layer 112 are shown in a simplified diagram, thereby simplifying the same or similar description. For detailed structures, please refer to the examples in FIGS. 1A to 1C.

The carrier 202 is disposed below the flexible substrate 102. At least one release layer 204 is interposed between the carrier 202 and the flexible substrate 102. The carrier 202 can completely cover the lower surface of the flexible substrate 102. The first gas barrier flat layer 114 is disposed above the flexible substrate 102 and the element layer 112. The first covering surface 114 d of the first gas barrier flat layer 114 can completely cover the upper surface of the element layer 112. In one embodiment, the first gas barrier flat layer 114 may further extend to cover the sidewall of the element layer 112, or even cover the exposed surface and / or the sidewall of the flexible substrate 102.

The flexible substrate 102 and the element layer 112 are located between the first gas barrier flat layer 114 and the carrier 202. The first gas-blocking flat layer 114 is a first nitrogen-rich region 114a in a region close to the first flat surface 114c. As mentioned above, the first nitrogen-rich region 114a has excellent gas-barrier characteristics, which can make the first gas-blocking flat layer 114a 114 has both a flattening effect and a gas blocking effect.

3 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. Please refer to FIG. 3. The embodiment of the electronic device 300 in FIG. 3 is similar to the embodiment of the electronic device 200 in FIG. 2. Therefore, the same components are denoted by the same reference numerals, and will not be repeated here. In the electronic device 300, the first nitrogen-rich region 114a of the first gas barrier flat layer 114 is located in a region of the first gas barrier flat layer 114 close to the first flat surface 114c and a sidewall. The first nitrogen-rich region 114 a in FIG. 3 is formed by, for example, plasma ion implantation on the first flat surface 114 c and the sidewall of the first gas barrier flat layer 114. In an embodiment, the first covering surface 114d of the first nitrogen-rich region 114a on the first gas barrier flat layer 114 can cover the sidewall of the element layer 112, or even further extend to cover the exposed surface and / or sidewall of the flexible substrate 102. . The first oxygen-rich region 114b of the first gas-blocking flat layer 114, the flexible substrate 102, and the element layer 112 are covered between the first nitrogen-rich region 114a of the first gas-blocking flat layer 114 and the carrier 202.

As described above, the first nitrogen-rich region 114a has excellent gas barrier properties. The first nitrogen-rich region 114a of the electronic device 300 has a side-wall gas-barrier effect compared to the first nitrogen-rich region 114a of the electronic device 200. The first gas barrier flat layer 114 of the electronic device 300 has a planarization effect and a better gas barrier effect than the first gas barrier flat layer 114 of the electronic device 200.

FIG. 4 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. Please refer to FIG. 4. The embodiment of the electronic device 400 in FIG. 4 is similar to the embodiment of the electronic device 200 in FIG. 2. Therefore, the same components are denoted by the same reference numerals, and are not described herein again. The electronic device 400 further includes a second gas barrier flat layer 402. An upper surface of the second gas barrier flat layer 402 is a flat second flat surface 402c, and a lower surface of the second gas barrier flat layer 402 is a first flat surface 114c that contacts the first gas barrier flat layer 114, and the first Second coverage 402d. A region of the second gas barrier flat layer 402 near the first flat surface 114c is a second oxygen-rich region 402b. For example, the plasma ion implantation method of the first gas barrier flat layer 114 forms a nitrogen atom concentration gradient, and the second nitrogen-rich region 402a has a higher nitrogen atom concentration, and the material is, for example, polysilazane. A region of the second gas barrier flat layer 402 near the second covering surface 402d is a second oxygen-rich region 402b. For example, the plasma ion implantation method of the first gas barrier flat layer 114 forms a nitrogen atom concentration gradient, and the second oxygen-rich region 402b has a lower nitrogen atom concentration or does not have a nitrogen atom. Siloxane has a higher oxygen atom concentration.

Based on the gas barrier properties of the material of the second nitrogen-rich region 402a in the second gas barrier flat layer 402, the water vapor transmission rate of the second gas barrier flat layer 402 is, for example, less than or equal to 10 ^-2 g / m ^2- The day is preferably 10 ^-5 g / m 2 -day or less. The second gas-barrier flat layer 402 and the first gas-barrier flat layer 114 may include the same material and be formed by the same process.

As described above, both the second nitrogen-rich region 402a and the first nitrogen-rich region 114a have excellent gas barrier properties. Therefore, the first gas barrier flat layer 114 and the second gas barrier flat layer 402 of the electronic device 400 have planarization. Efficacy and gas barrier effect.

FIG. 5 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. Please refer to FIG. 5. The embodiment of the electronic device 500 in FIG. 5 is similar to the embodiment of the electronic device 400 in FIG. 4. Therefore, the same components are denoted by the same reference numerals, and are not described herein again. In the electronic device 500, the first nitrogen-rich region 114a of the first gas-blocking flat layer 114 is located in the region and the side wall of the first gas-blocking flat layer 114 close to the first flat surface 114c; the second nitrogen-rich layer of the second gas-blocking flat layer 402 The region 402a is located in a region of the second gas barrier flat layer 402 near the second flat surface 402c and a sidewall.

The first nitrogen-rich region 114a of FIG. 5 is formed by implanting plasma ions on the first flat surface 114c and the sidewall of the first gas-barrier flat layer 114, for example. In an embodiment, the first covering surface 114d of the first nitrogen-rich region 114a on the first gas barrier flat layer 114 can cover the sidewall of the element layer 112, or even further extend to cover the exposed surface and / or sidewall of the flexible substrate 102. . The first oxygen-rich region 114b of the first gas-blocking flat layer 114, the flexible substrate 102, and the element layer 112 are covered between the first nitrogen-rich region 114a of the first gas-blocking flat layer 114 and the carrier 202. The second nitrogen-rich region 402a is formed by, for example, plasma ion implantation on the second flat surface 402c and the side wall of the second gas-barrier flat layer 402. In one embodiment, the second covering surface 402d of the second nitrogen-rich region 402a on the second gas barrier flat layer 402 may cover the sidewall of the element layer 112, or even further extend to cover the exposed surface and / or sidewall of the flexible substrate 102. . The second oxygen-rich region 402b, the first gas-blocking planar layer 114, and the element layer 112 of the second gas-blocking planar layer 402 are covered between the second nitrogen-rich region 402a of the second gas-blocking planar layer 402 and the carrier 202. .

As mentioned above, the second nitrogen-rich region 402a and the first nitrogen-rich region 114a of the electronic device 500 both have excellent gas-barrier characteristics. Side wall gas barrier effect. The first gas barrier flat layer 114 and the second gas barrier flat layer 402 of the electronic device 500 have a planarization effect and a better gas barrier effect than the first gas barrier flat layer 114 and the second gas barrier flat layer 402 of the electronic device 400 .

FIG. 6 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. Please refer to FIG. 6. The embodiment of the electronic device 600 in FIG. 6 is similar to the embodiment of the electronic device 100 in FIG. 1C. Therefore, the same components are denoted by the same reference numerals, and are not described herein again. The electronic device 600 further includes an attaching layer 602 disposed above the first flat surface 114 c of the first gas barrier flat layer 114. The first nitrogen-rich region 114a may have better adhesion to, for example, an epoxy group-containing attachment layer 602, so the attachment layer 602 may include a material containing an epoxy group. In addition, although not shown in FIG. 6, it should be understood that the attaching layer 602 can also be disposed above the second flat surface 402 c of the second gas-barrier flat layer 402, and can also achieve the aforementioned effects.

FIG. 7 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. FIG. 7 illustrates a state where the present invention is applied to a touch panel and a display panel, and is intended to facilitate the description of the structure of the electronic device 700 of the present invention, but the present invention is not limited thereto. In addition, during the manufacturing process of the electronic device 700 taught in FIG. 7, the device and the film layer can be turned upside down. Terms related to the direction, such as “above”, “below”, “upper surface”, “lower surface”, etc. Correspond to the corresponding explanation.

Referring to FIG. 7, the electronic device 700 includes a first panel 702, an attaching layer 602, and a second panel 704. The first panel 702 and the second panel 704 can be exemplified by a touch panel and a display panel, respectively. The first panel 702 includes a flexible substrate 102, an element layer 112, and a gas barrier flat layer 706. The element layer 112 is, for example, a film layer of a touch panel including a buffer layer 104, a conductive layer 106, an insulating layer 108, and a metal layer 110. . For the structures, materials, and manufacturing methods of the flexible substrate 102 and the element layer 112, reference may be made to the foregoing description, and the same or similar content will not be described in detail below.

As shown in FIG. 7 and referring to FIG. 1A simultaneously, the flexible substrate 102 and the element layer 112 have a non-planar film layer stack design. The imaginary connection (or neutral axis) of the electronic device 700 in which the internal stress of the film stacking direction is 0 will show fluctuations. The height y̅ of the neutral axis of the specific position of the electronic device 700 in the film stacking direction d can be expressed by (Equation 1): ......... .. (Formula 1) the length L _i of equivalent structures corresponding to the i-th layer in a specific position by Young's modulus, W _i is the i-th layer thickness specific position, H _i for the particular location The height of the i-th film layer at the center point of the film stacking direction.

From the calculation method of (Equation 1), it can be deduced that: in a specific position of the region containing the pattern layer, it can have a higher film stacking height and a higher neutral axis height y̅; otherwise, in the region without the pattern layer At a specific position, it can have a lower film stack height and a lower neutral axis height y̅. That is, before the electronic device 700 is not flattened, the neutral axis of the electronic device 700 has a locally large difference in height y. If the local neutral axis height y is too large, it is easy to cause the electronic device 700 to fail during the flexing process, such as electrical failure or physical characteristics (such as gas barrier effect), and gas barriers are formed on the flexible substrate 102 and the component layer 112. The flat layer 706 can achieve flattening and reduce a local height difference y of the neutral axis.

To adjust the variation of the neutral axis, the closer the Young's coefficients of the gas barrier flat layer 706 and the pattern layer are, the better, but considering that the electronic device 700 has flexibility, the Young's coefficient of the gas barrier flat layer 706 can be, for example, 3 Gpa ~ 10 Gpa.

For the manufacturing process of the first panel 702 of the electronic device 700, reference may be made to FIG. 1A to FIG. 1C and FIG. 6 at the same time. For the description of the directions below, FIG. 1A to FIG. 1C and FIG. 6 shall prevail.

Please refer to FIG. 7 and also FIG. 1B. After the flexible substrate 102 and the element layer 112 are formed, a material of the gas barrier flat layer 706 can be formed on the flexible substrate 102 and the element layer 112 by a solution coating method. For example, it includes polysilazane, polysiloxane, polysilazane, or other suitable materials, which can have a good planarization effect. The process of forming the gas barrier flat layer 706 into a film layer can completely cover the upper surface of the flexible substrate 102 and / or the upper surface of the element layer 112. The maximum height difference ΔH of the upper surface of the element layer 112 along the film stacking direction d is, for example, 900 nm or less, preferably 600 nm or less, and more preferably 300 nm or less. After the gas-blocking flat layer 706 coated with the solution is cured, plasma ion implantation is performed on the gas-blocking flat layer 706, and nitrogen atoms are implanted into the gas-blocking flat layer 706 to improve the gas-barrier effect of the gas-blocking flat layer 706.

Please refer to FIG. 7 and FIG. 1C together. After the gas barrier flat layer 706 in the aforementioned electronic device 700 is implanted with plasma ions, the gas barrier flat layer 706 starts to form a decreasing gradient of nitrogen atom concentration from the top. The upper surface of the gas barrier flat layer 706 is a flat surface 706c, and the lower surface of the gas barrier flat layer 706 covers a cover surface 706d on the flexible substrate 102 or / and the element layer 112. A region of the gas-blocking flat layer 706 near the flat surface 706c is a nitrogen-rich region 706a.

The foregoing plasma ion implantation can form a nitrogen atom concentration gradient, and the nitrogen-rich region 706a has a higher nitrogen atom concentration, and the material thereof is, for example, polysilazane. The gas-barrier property of the gas-blocking flat layer 706 is, for example, less than or equal to 10 ^-2 g / m ² -day, and preferably less than Or equal to 10 ^-5 g / m 2 -day. The gas barrier flat layer 706 may have both a planarization effect and a gas barrier effect. An area of the gas-blocking flat layer 706 near the covering surface 706d is an oxygen-rich region 706b. The aforementioned plasma ion implantation can form a gradient of nitrogen atom concentration. The oxygen-rich region 706b has a lower nitrogen atom concentration or does not have a nitrogen atom. Its material is, for example, polysilazane or polysiloxane, and has a higher Oxygen atom concentration. The oxygen-rich region 706b may have better adhesion to the insulating layer 108 or the metal layer 110 containing an ester group, so the insulating layer 108 may include a material containing an ester group.

Please refer to FIG. 7 and FIG. 6 at the same time, the electronic device 700 includes an attaching layer 602 disposed on a flat surface 706c of the gas barrier flat layer 706. The nitrogen-rich region 706a may have better adhesion with, for example, an epoxy-containing adhesive layer 602, so the adhesive layer 602 may include a material containing an epoxy group.

As shown in FIG. 7, the electronic device 700 can be turned upside down after the aforementioned process. The attachment layer 602 of the electronic device 700 is relatively attached to the other surface of the gas barrier flat layer 706 and the second panel 704, so that the first panel 702 and the second panel 704 of the electronic device 700 are adhered to each other by the attachment layer 602. Pick up.

An embodiment of the present invention provides a flexible electronic device having a gas blocking flat layer, and the gas blocking flat layer has a nitrogen-rich region having a gas blocking function. The gas barrier flat layer according to the embodiment of the present invention can improve the gas barrier function of the conventional flat layer, and further, the gas barrier and planarization effects can be achieved by a single deposited film layer.

In addition, the nitrogen-rich region of the gas barrier flat layer may have better adhesion to the epoxy-containing attachment layer; the oxygen-rich region of the gas barrier flat layer may have better adhesion to the insulating layer or metal layer containing an ester group. Adhesiveness. The gas-blocking flat layer of the embodiment of the present invention can provide the effect of stabilizing the element structure.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the appended patent application scope and its equivalent scope.

100, 200, 300, 400, 500, 600, 700‧‧‧ electronic devices

102‧‧‧ Flexible substrate

104‧‧‧Buffer layer

106‧‧‧ conductive layer

108‧‧‧ Insulation

110‧‧‧metal layer

112‧‧‧Element Layer

114‧‧‧first gas barrier flat layer

114a‧‧‧The first nitrogen-rich area

114b‧‧‧The first oxygen-rich zone

114c‧‧‧First flat surface

114d‧‧‧first coverage

114p‧‧‧First gas barrier flat structure

202‧‧‧ Vehicle

204‧‧‧ Release layer

402‧‧‧Second gas barrier flat layer

402a‧‧‧Second nitrogen-rich area

402b‧‧‧Second oxygen-rich zone

402c‧‧‧Second flat surface

402d‧‧‧Second Coverage

602‧‧‧ Attachment layer

702‧‧‧First panel

704‧‧‧Second Panel

706‧‧‧Gas barrier flat layer

706a‧‧‧Nitrogen-rich area

706b‧‧‧ oxygen-rich area

706c‧‧‧ flat surface

706d‧‧‧ Coverage

d‧‧‧ film stacking direction

ΔH‧‧‧Maximum height difference

N1, N2 ‧‧‧ neutral axis

1A to 1C are cross-sectional views of a manufacturing process of a flexible electronic device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. 3 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. FIG. 4 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. FIG. 5 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. FIG. 6 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention. FIG. 7 is a cross-sectional view of a flexible electronic device according to another embodiment of the present invention.

Claims (16)

A flexible electronic device includes: a flexible substrate; an element layer located on the flexible substrate and having an upper surface, wherein a maximum height difference of the upper surface in a film layer stacking direction is less than or equal to 900 nanometers Meters; and a first gas barrier flat layer covering the element layer and the flexible substrate, and having a first covering surface and a first flat surface opposite to the first covering surface, wherein the first gas barrier The water vapor transmission rate of the flat layer is less than or equal to 10 ^-2 g / m ² -day. The flexible electronic device according to item 1 of the scope of patent application, wherein the first gas barrier flat layer has a first oxygen-rich region and a first nitrogen-rich region, and the first oxygen-rich region is close to the first The first covering surface of the gas barrier flat layer, and the first nitrogen-rich region is close to the first flat surface of the first gas barrier flat layer. The flexible electronic device according to item 2 of the scope of patent application, further comprising: a carrier on the flexible substrate and the element layer; and a release layer between the flexible substrate and Between the carriers, wherein the first gas barrier flat layer covers the upper surface and / or the side wall of the element layer, and covers the carrier, the element layer is located on the first Between the gas barrier flat layer and the carrier. The flexible electronic device according to item 3 of the scope of patent application, wherein the first nitrogen-rich region further includes a sidewall of the first gas barrier flat layer. The flexible electronic device according to item 3 of the scope of patent application, further comprising: a second gas barrier flat layer covering the first gas barrier flat layer, and having a second covering surface and a second covering surface opposite to the second covering surface. A second flat surface, the second gas-blocking flat layer has a second oxygen-rich region and a second nitrogen-rich region, and the second oxygen-rich region is close to the second covering surface of the second gas-blocking flat layer, The second nitrogen-rich region is close to the second flat surface of the second gas barrier flat layer, wherein the water vapor transmission rate of the second gas barrier flat layer is less than or equal to 10 ^-2 g / m 2 -day. The flexible electronic device according to item 5 of the scope of patent application, wherein the second gas barrier flat layer covers the upper surface and the sidewall of the element layer and the first flatness of the first gas barrier flat layer The surface and the side wall are covered on the carrier, and the element layer and the first gas barrier flat layer are covered between the second gas barrier flat layer and the carrier. The flexible electronic device according to item 6 of the scope of patent application, wherein the second nitrogen-rich region further includes a sidewall of the second gas barrier flat layer. The flexible electronic device according to item 2 of the scope of patent application, further comprising: an attaching layer located on the first flat surface of the first gas barrier flat layer. The flexible electronic device according to item 8 of the scope of patent application, wherein: the material of the attachment layer includes an epoxy-based material; and the material of the first nitrogen-rich region of the first gas barrier flat layer includes Polysilazane and contacting the attachment layer; the element layer has an insulating layer including an ester-based material; and the material of the first oxygen-rich region of the first gas barrier flat layer includes polysilazane Oxane or polysiloxane and contact the insulating layer. The flexible electronic device according to item 1 of the scope of patent application, wherein the Young's coefficient of the first gas barrier flat layer is between 3 Gpa and 10 Gpa. A flexible electronic device includes: a first panel including a flexible substrate; an element layer on the flexible substrate; and a gas barrier flat layer covering the element layer and the flexible substrate And has a covering surface and a flat surface opposite to the covering surface, the gas-blocking flat layer has an oxygen-rich region and a nitrogen-rich region, the oxygen-rich region is close to the covering surface of the gas-blocking flat layer, and the nitrogen-rich region is A region close to the flat surface of the gas barrier flat layer; a second panel; and an attaching layer interposed between the first panel and the second panel and contacting the gas barrier flat layer A flat surface and the second panel. The flexible electronic device according to item 11 of the scope of patent application, wherein: the material of the attachment layer includes an epoxy-based material; the material of the nitrogen-rich region of the gas-blocking flat layer includes polysilicon-oxygen The element layer has an insulating layer including an ester-based material; and the material of the oxygen-rich region of the gas barrier flat layer includes polysilazane or polysiloxane, and is in contact with the insulating layer. The flexible electronic device according to item 11 of the scope of patent application, wherein the element layer has an upper surface, and a maximum height difference of the upper surface in a film layer stacking direction is less than or equal to 900 nm. The flexible electronic device according to item 11 of the scope of patent application, wherein the water vapor transmission rate of the flat gas barrier layer is less than or equal to 10 ^-2 g / m ² -day. The flexible electronic device according to item 11 of the scope of patent application, wherein the Young's coefficient of the gas-blocking flat layer is between 3 Gpa and 10 Gpa. The flexible electronic device according to item 11 of the scope of patent application, wherein the first panel is a touch panel and the second panel is a display panel.