TW201812892A - Grinding apparatus including a grinding means for grinding a wafer held on a holding table, a Y-direction moving means for positioning the holding table, and a control means - Google Patents

Abstract

The present invention is to efficiently perform grinding processing on a wafer. A grinding device (1) includes a grinding means for grinding a wafer (W) held on a holding table (10), a Y-direction moving means (13) for positioning the holding table (10) at a moving in/out position (P1) and a grinding position (P2), and a control means (70). The grinding means includes a first rotating means (20) provided with a rough grinding wheel (26) configured to be rotatable; a first grinding feeding means (40) for feeding the first rotating means (20) along a Z-direction for grinding; a second rotating means (30) provided with a final grinding wheel (36) configured to be rotatable; a second grinding feeding means (50) for feeding the second rotating means (30) along the Z-direction for grinding; and an X-direction moving means (60) for moving the first grinding feeding means (40) and the second grinding feeding means (50) together along the X-direction. While grinding the wafer (W) on one side of a rough grinding whetstone (27) or a final grinding whetstone (37), a grinding preparation, such as trimming, can be performed at the other side which has not been ground, so as to grind the wafer (W) efficiently.

Description

   Grinding device   

The present invention relates to a grinding device for grinding a wafer to a specific thickness.

A grinding device that grinds a wafer to a specific thickness includes at least a holding table that holds the wafer, rough grinding means for rough grinding the wafer, and final grinding for final grinding of the wafer to be rough ground. means. In such a grinding device, rough grinding and final grinding of the wafer are sequentially performed, and the wafer can be ground to a specific final thickness. Here, when two grinding means are assembled in the device, since the installation area (occupied area) becomes large, for example, there are two patent documents in which the two are arranged in parallel in the moving direction of the holding table. Grinding means, a grinding device that reduces the occupied area.

    [Prior technical literature]         [Patent Literature]    

[Patent Document 1] Japanese Patent No. 5693303

However, in the above-mentioned grinding device, since two grinding means are arranged in the movement path of the holding table, there are preparations for grinding of the other grinding means that cannot be performed in the grinding process of the wafer by one grinding means The problem of poor processing efficiency.

The present invention has been made in view of the above circumstances, and has as its purpose to enable efficient grinding of wafers.

The invention relates to a grinding device, which includes a rotatable holding table for holding wafers, a grinding method for grinding wafers held on the holding table by grinding vermiculite, and a Y-direction moving device for positioning respectively. A carry-in and carry-out position in which the holding table is linearly moved in the Y direction, and a wafer is held in the holding table by the grinding means; and a control means, It controls at least the grinding means and the Y-direction moving means. The grinding means includes: a rotating means, a grinding wheel in which a grinding vermiculite is arranged to be rotatable, and a grinding feed means, which enables the rotating means. Grinding feed in the Z direction which is perpendicular to the holding table; and X-direction moving means for moving the grinding feed means in the X direction orthogonal to the Z direction and the Y direction, the control means is After the holding table holding the wafer is positioned at the grinding position by the Y-direction moving means, the grinding vermiculite mounted on the rotating means by the X-direction moving means is fixed. After passing through the position of the center of the wafer held on the holding table, the grinding means is ground and fed by the grinding feed means to grind the wafer accordingly.

Furthermore, the above-mentioned grinding means includes: a first rotating means that is provided with a coarse grinding wheel provided with a coarse grinding vermiculite in an annular shape so as to be rotatable; and a first grinding feed means that makes the first rotating means toward The Z-direction grinding feed that is perpendicular to the holding table; the second rotation means is a final grinding wheel in which the final grinding vermiculite is arranged in a ring shape so as to be rotatable; the second grinding feed means is a system The second rotation means is ground and fed in the Z direction which is perpendicular to the holding table; and the X direction movement means is made to move the first ground and the second ground together. The X direction movement orthogonal to the Z direction and the Y direction, the control means is to position the holding table holding the wafer at the grinding position by the Y direction movement means, and then use the X direction movement means to move The rough grinding vermiculite or the final grinding vermiculite is positioned at a position passing the center of the wafer held on the holding table, and then the first turning feed means or the second grinding feed means is used to make the first turning The turning means or the second rotating means grinds the feed, and grinds the wafer accordingly.

Further, the grinding means includes a third grinding feed means for grinding the feed in the Z direction perpendicular to the holding table together with the first rotation means and the second rotation means; and the X direction The moving means moves the third grinding feed means in the X direction orthogonal to the Z direction and the Y direction. The first rotating means and the second rotating means use only the rough grinding vermiculite or the final grinding. One side of the vermiculite is arranged through the center of the wafer held on the holding table and the other side is not in contact with the wafer and is arranged in the X direction. The above control means is to hold the holding table of the wafer. After the Y-direction moving means is positioned at the grinding position, the X-direction moving means is used to position the rough grinding vermiculite or the final grinding vermiculite at a position passing the center of the wafer held on the holding table, and then borrow the The first grinding means and the second turning means are ground and fed together by the third grinding feed means, and the wafer is ground according to the grinding feed.

The grinding device related to the present invention has a structure including a holding table for holding wafers, a grinding method for grinding wafers held on the holding table, and a Y-direction moving means for positioning the holding tables respectively. Moving linearly in the Y direction, loading and unloading positions for loading and unloading wafers to and from the holding table, and grinding positions for wafers held on the holding table by grinding means; and control means for controlling at least the grinding means and the Y direction movement Means and grinding means are: a rotating means, which is a ring-shaped grinding wheel provided with grinding vermiculite, is installed to be rotatable; a grinding feed means, which rotates the rotating means in the Z direction perpendicular to the holding table, ; And X direction moving means, which moves the grinding feed means in the X direction orthogonal to the Z direction and the Y direction, and the control means positions the holding table holding the wafer behind the grinding position by the Y direction moving means. The grinding vermiculite mounted on the rotating means is positioned by the X-direction moving means, and is positioned after passing through the center of the wafer held on the holding table, and then ground by grinding. The feed means rotates the grinding means and feeds the wafer accordingly. Therefore, preparations such as grinding of vermiculite can be performed at the timing before wafer grinding starts.

In addition, the above-mentioned grinding means includes a first rotation means that is provided with a rough grinding wheel provided with a rough grinding vermiculite in an annular shape so as to be rotatable, and a first grinding feed means that is a first rotation means The grinding feed is in the Z direction which is perpendicular to the holding table. The second rotation means is a final grinding wheel in which the final grinding vermiculite is arranged in a ring shape so as to be rotatable. The second grinding feed means is to enable rotation. The second rotation means grinds the feed in the Z direction which is perpendicular to the holding table; and the X direction moves the means to make the first grind feed means and the second grind feed mean positively in the Z direction and the Y direction. The above-mentioned control means is to position the holding table holding the wafer at the grinding position by the Y-direction moving means, and then move the coarse grinding vermiculite or the final grinding vermiculite by the X-direction moving means, and position it at After holding the center position of the wafer on the stage, the first rotation means or the second rotation means is ground and fed by the first grinding feed means or the second grinding feed means, so the rough grinding of the vermiculite or the final grinding means is performed. When one of the whetstone grinding wafer, trimming, etc. can be prepared without grinding the other side of the grinding, good efficiency and can be ground into the grinding a certain thickness of the wafer.

In addition, the above-mentioned grinding means is provided with a third grinding feed means that grinds the feed in the Z direction that is perpendicular to the holding table together with the first rotation means and the second rotation means; and an X-direction moving means that The third grinding feed means is moved in the X direction orthogonal to the Z direction and the Y direction. The first rotation means and the second rotation means are only held by the coarse grinding vermiculite or the final grinding vermiculite, and are held by the holding table. The center of the wafer, the distance between the other side that is not in contact with the wafer, is arranged at intervals in the X direction. The control means is to position the holding table holding the wafer at the grinding position by the Y direction movement means, and then use the X direction. After the coarse grinding vermiculite or the final grinding vermiculite is positioned by the moving means by the center of the wafer held on the holding table, the first rotating means or the second rotating means is ground and fed together by the third grinding feeding means. According to this, the wafer is ground, so even if the first rotation means and the second rotation means are fed at the same time, one of the rough grinding vermiculite or the final grinding vermiculite passes through the center of the wafer and the other is not connected with the wafer. Touch of danger. According to this, as described above, when rough grinding of vermiculite or final grinding of vermiculite is used to grind wafers, preparations such as trimming can be made on the other side without grinding.

1.1A‧‧‧grinding device

2‧‧‧ device base

3‧‧‧ cylinder

4a, 4b‧‧‧platform

5a, 5b‧‧‧ Cassette

6‧‧‧ moving out

7‧‧‧Temporary placement table

8a‧‧‧The first transportation method

8b‧‧‧The second transportation method

9‧‧‧ Washing means

10‧‧‧ holding table

10a‧‧‧ keep face

11‧‧‧ Motor

12‧‧‧ cover

13, 13A‧‧‧Y direction moving means

14‧‧‧Thickness measuring means

14a‧‧‧The first height gauge

14b‧‧‧ 2nd height gauge

15‧‧‧ fixed shaft

20‧‧‧ the first rotation means

21‧‧‧ Spindle

22‧‧‧ Motor

23‧‧‧ Spindle housing

24‧‧‧ retainer

25‧‧‧ bracket

26‧‧‧ Rough grinding wheel

27‧‧‧ rough grinding vermiculite

28a, 28b‧‧‧Adjust the shaft

29‧‧‧ fixed shaft

30second rotation means

31‧‧‧ Spindle

32‧‧‧ Motor

33‧‧‧ Spindle housing

34‧‧‧ retainer

35‧‧‧ bracket

36‧‧‧ Final Grinding Wheel

37‧‧‧ Final grinding of vermiculite

38a, 38b‧‧‧ Adjustment shaft

39‧‧‧Fixed shaft

40‧‧‧ 1st grinding feed

41‧‧‧ball screw

42‧‧‧ Motor

43‧‧‧rail

44‧‧‧ Lifting plate

50‧‧‧ 2nd grinding feed

51‧‧‧ball screw

52‧‧‧Motor

53‧‧‧rail

54‧‧‧ Lifting plate

60‧‧‧X direction moving means

61‧‧‧ball screw

62‧‧‧Motor

63‧‧‧rail

64, 65‧‧‧ Mobile

70, 70A‧‧‧ Control means

80‧‧‧ 3rd grinding feed

81‧‧‧ball screw

82‧‧‧ Motor

83‧‧‧rail

84‧‧‧ Lifting Department

90‧‧‧X direction movement means

91‧‧‧ball screw

92‧‧‧ Motor

93‧‧‧rail

94‧‧‧ Movable Section

FIG. 1 is a perspective view showing a configuration of a first example of a grinding device.

FIG. 2 is a plan view of a state where a wafer is roughly ground by a first rotation means provided in a first example of a grinding apparatus.

FIG. 3 is a plan view of a state in which a wafer is finally ground by a second rotation means included in the first example of the grinding apparatus.

Fig. 4 is a perspective view showing the structure of a second example of the grinding device.

FIG. 5 is a plan view of a state where the wafer is roughly ground by a first rotation means provided in a second example of the grinding apparatus.

FIG. 6 is a plan view of a state where the wafer is finally ground by a second rotation means provided in a second example of the grinding apparatus.

The grinding device 1 shown in FIG. 1 is a first example of a grinding device for performing rough grinding and final grinding on a crystal circle as a workpiece. The grinding device 1 includes a device base 2 extending in the Y-axis direction. Platforms 4a and 4b are arranged adjacent to the front of the device base 2 in the Y-axis direction. A cassette 5a for storing wafers before grinding is arranged on the platform 4a, and a cassette 5b for storing wafers after grinding is arranged on the platform 4b.

Near the cassette 5a and the cassette 5b, a wafer before grinding is carried out from the cassette 5a, and at the same time, the wafer 6 after the grinding is transferred to the cassette 5b. In the movable range of the loading and unloading means 6, a temporary placement table 7 for temporarily placing wafers before grinding and a washing means 9 for washing wafers after grinding are provided.

A holding table 10 is provided at the center of the upper surface of the device base 2 to rotatably hold the wafer. The upper surface of the holding table 10 is a holding surface 10a for holding a wafer, and is connected to a suction source. A motor 11 is connected to the lower end of the holding table 10. The periphery of the holding table 10 is covered by a cover 12. The holding table 10 is supported from below by a fixed shaft 15 shown in FIG. 2. In addition, although not shown, the holding surface 10a of the holding table 10 is an inclined surface with its center portion as the apex, and the outer peripheral direction is inclined downward.

In the vicinity of the temporary placing table 7, a first conveying means 8 a for conveying the wafer before grinding from the temporary placing table 7 to the holding table 10 is provided. Furthermore, a second conveyance means 8b is disposed adjacent to the first conveyance means 8a to convey the ground wafer from the holding table 10 to the cleaning means 9.

At the rear of the device base 2 in the Y-axis direction, a post 3 extending in the Z-axis direction is erected. A grinding means for grinding the wafer held by the holding table 10 is provided on the side of the pillar 3. The grinding means includes a first rotation means 20 that performs rough grinding on the wafer, and a first grinding feed means 40 that advances the first rotation means 20 in the Z direction perpendicular to the holding table 10, and The wafer is subjected to a second grinding means 30 for final grinding, a second grinding feed means 50 for grinding and feeding the second rotation means 30 in the Z direction perpendicular to the holding table 10, and a first grinding The feed means 40 and the second grinding feed means 50 are X-direction moving means 60 that move in the X direction orthogonal to the Z direction and the Y direction.

The first rotation means 20 includes a main shaft 21 having an axis center in the Z-axis direction, a motor 22 connected to the upper end of the main shaft 21, a holder 24 holding a main shaft housing 23 that rotatably supports the main shaft 21, and a bracket 25. The rough grinding wheel 26 arranged at the lower end of the main shaft 21 and the rough grinding vermiculite 27 annularly arranged at the lower part of the rough grinding wheel 26 function as rough grinding means. When the main shaft 21 is rotated by the motor 22, the rough grinding wheel 26 can be rotated at a specific rotation speed. The first rotation means 20 is provided with adjusting shafts 28a and 28b shown in FIG. 2 for adjusting the state of the grinding surface of the rough grinding wheel 26 and the holding surface 10a of the holding table 10, and the rough grinding wheel 26 is fixed. Supported fixed shaft 29. In addition, the grinding surfaces of the rough grinding wheel 26 can be inclined by a specific angle by adjusting the shafts 28a and 28b.

The first grinding feed means 40 includes a ball screw 41 extending in the Z-axis direction, a motor 42 connected to one end of the ball screw 41, a pair of guide rails 43 extending parallel to the ball screw 41, and one surface and a support器 24 连接 的 Lifting plate 44. A pair of guide rails 43 are slidably connected to the other surface of the lifting plate 44, and a ball screw 41 is screwed into a nut formed at a central portion of the lifting plate 44. When the ball screw 41 is driven by the motor 42, the lifting plate 44 can be raised and lowered in the ± Z direction along the pair of guide rails 43 and the first rotating means 20 can be moved in the ± Z direction.

The second rotation means 30 includes a main shaft 31 having an axis center in the Z-axis direction, a motor 32 connected to the upper end of the main shaft 31, a holder 34 holding a main shaft housing 33 that rotatably supports the main shaft 31, and a bracket 35. The final grinding wheel 36 arranged at the lower end of the main shaft 31 and the final grinding vermiculite 37 annularly arranged at the lower part of the final grinding wheel 36 function as a final grinding means. When the main shaft 31 is rotated by the motor 32, the final grinding wheel 36 can be rotated at a specific rotation speed. The second rotation means 30 is provided with adjustment shafts 38a and 38b shown in FIG. 2 for adjusting the state of the grinding surface of the final grinding wheel 36 and the holding surface 10a of the holding table 10, and the final grinding wheel 36 is fixed. Supported fixed shaft 39. In addition, the grinding surfaces of the final grinding wheel 36 can be inclined by a specific angle by adjusting the shafts 38a and 38b.

The second grinding feed means 50 includes a ball screw 51 extending in the Z-axis direction, a motor 52 connected to one end of the ball screw 51, a pair of guide rails 53 extending parallel to the ball screw 51, and one surface and a support器 34 连接 的 Lifting plate 54. A pair of guide rails 53 are slidably connected to the other surface of the lifting plate 54, and a ball screw 51 is screwed into a nut formed at a central portion of the lifting plate 54. When the ball screw 51 rotates by being driven by the motor 52, the lifting plate 54 can be raised and lowered in the ± Z direction along the pair of guide rails 53, and the second rotating means 30 can be raised and lowered in the ± Z direction.

The X-direction moving means 60 includes a ball screw 61 extending in the X-axis direction, a motor 62 connected to one end of the ball screw 61, a pair of guide rails 63 extending parallel to the ball screw 61, and one surface is connected to the first The movable portion 64 connected to the one rotation means 20 is connected to the movable portion 65 of the second rotation means 30 on one side. A pair of guide rails 63 are slidably connected to the other surfaces of the movable portions 64 and 65, and a ball screw 61 is screwed into a nut formed at a central portion of the movable portions 64 and 65. The X-direction moving means 60 moves the first grinding feed means 40 and the second grinding feed means 50 together in the ± X direction to position the outer periphery of the rough grinding vermiculite 27 or the final grinding vermiculite 37 on the holding table. Position of the center of the wafer of 10. In addition, the movable portions 64 and 65 may have a configuration in which they are connected to each other as shown in the figure, or a configuration in which they are not connected to each other.

The grinding device 1 includes a Y-direction moving means 13 for positioning the holding table 10 at a specific position, a contact-type thickness measuring means 14 for measuring the thickness of the wafer held on the holding table 10, and at least a control of the grinding means and the Y-direction movement. Control means 70 of means 13. The Y-direction moving means 13 can be respectively positioned at the carrying-in and carrying-out position P1 for carrying the wafer into and out of the holding table 10 by moving the holding table linearly in the ± Y direction, and grinding the wafer held by the holding table 10 by grinding means. The grinding position P2.

The thickness measuring means 14 includes a first height gauge 14a that measures the height of the wafer held on the holding table 10, and a second height gauge 14b that measures the height of the holding surface 10a of the holding table 10, which is the height reference plane. Then, the difference between the measurement value measured by the first height gauge 14a and the measurement value measured by the second height gauge 14b can be calculated as the thickness of the wafer. The calculated thickness of the wafer is sent to the control means 70.

The control means 70 includes a memory element such as a CPU and a memory. The size (diameter) or thickness of the wafer is memorized in the memory element. The control means 70 is based on the information stored in the memory element to position the holding table 10 holding the wafer by the Y-direction moving means 13 at the grinding position P2, and then the X-direction moving means 60 to roughly grind the vermiculite 27 or finally After the grinding vermiculite 37 is positioned at a position passing through the center of the wafer held on the holding table 10, the first rotating means 20 or the second rotating means 30 is ground and fed in the ± Z direction to control the structure.

Next, an operation example of the grinding device 1 will be described. The wafer W shown in FIG. 2 is an example of a circular plate-shaped workpiece, and is not particularly limited. Many wafers W before the grinding are stored in the cassette 5a shown in FIG. In addition, in the control means 70, in addition to the diameter of the wafer W to be ground or the thickness before grinding, a specific thickness for rough grinding and a final thickness after final grinding are set in advance.

The carry-in and take-out 6 takes out the wafer W before grinding from the cassette 5 a and transfers it to the temporary placement table 7. After the wafer W is positioned by the temporary placement table 7, the first conveyance means 8a places the wafer W on the holding surface 10a of the holding table 10 which is waiting at the loading / unloading position P1. The holding table 10 sucks and holds the wafer W on the holding surface 10 a that causes the attraction force of the attraction source to rotate, and the holding table 10 is rotated at a specific rotation speed by the motor 11.

Next, the control means 70 controls the Y-direction moving means 13 to move the holding table 10 linearly in the + Y direction, for example, and positions the holding table 10 at the grinding position P2. Thereafter, as shown in FIG. 2, the control means 70 controls the X-direction moving means 60 to move the first grinding feed means 40 and the second grinding feed means 50 together, for example, in the + X direction, and will be mounted on The rough grinding vermiculite 27 shown in FIG. 1 of the rough grinding wheel 26 is positioned so as to pass through the center Wo of the wafer W held on the holding table 10 (the outer periphery 260 of the rotating rough grinding wheel 26 always passes the center Wo position). At this time, the final grinding wheel 36 constituting the second rotation means 30 is separated from the center Wo of the wafer W at its outer peripheral portion 360 and is positioned at a non-contact position that does not contact the wafer W. The first rotation means 20 performs rough grinding on the wafer W by, for example, feed grinding. The feed grinding is a technology in which the grinding table is rotated while the holding table 10 holding the wafer W is rotated, while the grinding vermiculite is brought into contact with the circular radius portion of the wafer W.

At the time of rough grinding, the axis of the main shaft 21 shown in FIG. 1 is inclined by a specific angle by adjusting the shafts 28 a and 28 b to adjust the grinding surface of the rough grinding vermiculite 27 mounted on the rough grinding wheel 26 and the holding table 10 The surface 10a has a parallel positional relationship. Next, while the rough grinding wheel 26 is rotated at a specific rotation speed, the first grinding means 20 is lowered in the -Z direction by the first grinding feed means 40, and the outer periphery 260 of the rough grinding wheel 26 always passes through the wafer W. The center is Wo, and the rough grinding vermiculite 27 is brought into contact with the arc-shaped grinding part G1, and the upper surface of the wafer W is roughly ground.

During the rough grinding of the wafer W, the thickness of the wafer W is monitored by the thickness measurement means 14. That is, the first height gauge 14a is brought into contact with the upper surface of the wafer W, and the second height gauge 14b is brought into contact with the holding surface 10a on the peripheral edge 100 side of the holding table 10 which is exposed to the outside from the outer peripheral portion Wc of the wafer W. In the example shown in the figure, the first height gauge 14a can be brought into contact with the upper surface of the wafer W, and the portion not in contact with the rough grinding wheel 26 can be used to measure the upper surface of the wafer W during grinding. The difference between the measured value measured by the first height gauge 14a and the measured value by the second height gauge 14b is calculated to calculate the thickness of the wafer W. When the calculated thickness of the wafer W reaches a specific thickness set by the control means 70, the rough grinding of the wafer W is finished. In addition, when it is determined that the wafer W is not ground to a specific thickness, the wafer W is roughly ground by the first rotation means 20 until the wafer W reaches a specific thickness.

In addition, during the rough grinding of the wafer W, a grinding preparation for the second rotation means 30 is performed. That is, since the second rotation means 30 is positioned at the above-mentioned non-contact position by the X-direction moving means 60 and the second grinding feed means 50 is capable of being raised and lowered in the ± Z direction alone, it can be used for rough grinding The dressing of the final grinding vermiculite 37 is performed using, for example, a dressing mechanism capable of moving up and down. Although the dressing mechanism is not shown in the figure, it is arranged on the device base 2 on the side of the second rotation means 30, for example. Accordingly, the wafer W after the rough grinding by the first rotating means 20 can be efficiently subjected to the final grinding.

After the rough grinding of the wafer W is completed, as shown in FIG. 3, the first grinding feed means 40 and the second grinding feed means 50 are moved together, for example, in the -X direction by the X direction moving means 60, and will be The final grinding vermiculite 37 shown in FIG. 1 mounted on the final grinding wheel 36 is positioned to pass through the center Wo of the wafer W held on the holding table 10 (the outer peripheral portion 360 of the rotating final grinding wheel 36 always passes through the center Wo's location). At this time, the rough grinding wheel 26 constituting the first rotating means 20 is separated from the center Wo of the wafer W at its outer peripheral portion 260 and is positioned at a non-contact position that does not contact the wafer W. Then, the second grinding means 30 performs the final grinding due to the feed grinding of the wafer W that has been roughly ground.

At the time of final grinding, the axis of the main shaft 31 shown in FIG. 1 is inclined by a specific angle by adjusting the shafts 38 a and 38 b to adjust the grinding surface of the final grinding vermiculite 37 mounted on the final grinding wheel 36 and the holding of the holding table 10. The surface 10a has a parallel positional relationship. Next, while the final grinding wheel 36 is rotated at a specific rotation speed, the second grinding means 30 is lowered in the -Z direction by the second grinding feed means 50, and the outer periphery 360 of the final grinding wheel 36 always passes through the wafer W. The center is Wo, and the final grinding vermiculite 37 is brought into contact with the arc-shaped grinding portion G2, and the final grinding is performed on the entire surface of the wafer W.

The final grinding of the wafer W is the same as the rough grinding, and the thickness of the wafer W is monitored by the thickness measuring means 14. In the example shown in the figure, since the first height gauge 14a can be brought into contact with the upper surface of the wafer W and not in contact with the final grinding wheel 36, the upper surface of the wafer W in the grinding process can be measured. The difference between the measurement value measured by the first height gauge 14a and the measurement value measured by the second height gauge 14b is calculated to calculate the thickness of the wafer W. When the calculated thickness of the wafer W reaches the final thickness set by the control means 70, the final grinding of the wafer W is ended. In addition, when it is judged that the wafer W is not ground to the final thickness, the wafer W is finally ground by the second rotation means 30 until the wafer W reaches the final thickness.

In addition, in the final grinding of the wafer W, the grinding preparation for the first rotation means 20 is performed. That is, the first rotation means 20 is positioned at the non-contact position by the X-direction moving means 60, and the first grinding feed means 40 can be raised and lowered in the ± Z direction alone, so it can be used in the final grinding The dressing of the rough grinding vermiculite 27 is performed using, for example, a dressing mechanism capable of moving up and down. Although the dressing mechanism is not shown, it is arranged on the device base 2 on the side of the first rotation means 20, for example. According to this, the rough grinding can be efficiently performed on the wafer W which is subsequently sent to the grinding position P2 shown in FIG. 1 before the grinding.

After the final grinding of the wafer W is completed, the holding table 10 is moved to the -Y direction by the Y-direction moving means 13 to be positioned at the carry-in / out position P1. The wafer W that has been finally ground is transferred from the holding table 10 to the cleaning means 9 by the second transfer means 8b, and the cleaning means 9 is subjected to a cleaning process and a drying process. Then, the wafer W is taken out from the cleaning means 9 by the carry-in / out means 6 and is stored in the cassette 5b.

In this way, the grinding apparatus 1 related to the present invention is provided with a holding means 10 for holding the wafer W, a grinding means for grinding the wafer W held on the holding table 10, and positioning the holding table 10 in and out, respectively. The Y-direction moving means 13 and the control means 70 at the position P1 and the grinding position P2 are provided with a first rotation means 20, and a rough grinding wheel 26 provided with a rough grinding vermiculite 27 in an annular shape is mounted to be rotatable. ; The first grinding feed means 40 is for grinding the feed of the first rotation means 20 in the Z direction perpendicular to the holding table 10; the second rotation means 30 is for arranging the final grinding vermiculite 37 in a ring shape The final grinding wheel 36 is mounted to be rotatable; the second grinding feed means 50 is used to grind the second rotation means 30 in the Z direction perpendicular to the holding table 10; the X-direction moving means 60 is The first grinding feed means 40 and the second grinding feed means 50 are moved together in the X direction orthogonal to the Z direction and the Y direction. The control means 70 moves the holding table 10 holding the wafer W in the Y direction. After the moving means 13 is positioned at the grinding position P2, The rough grinding vermiculite 27 or final grinding vermiculite 37 is positioned by the X-direction moving means 60 through the center Wo of the wafer W held on the holding table 10, and then the first grinding feed means 40 or the second The grinding means 50 can make the feed structure of the first rotation means 20 or the second rotation means 30. Therefore, in the grinding of the vermiculite 27 or the final grinding of the vermiculite 37, the wafer W can be ground without grinding the other. On the other hand, it is possible to grind wafer W efficiently by making preparations such as trimming.

The grinding apparatus 1A shown in FIG. 4 is a second example of a grinding apparatus that performs rough grinding and final grinding on a wafer as a workpiece. The grinding means included in the grinding device 1A includes a first rotation means 20A that performs rough grinding on the wafer, a second rotation means 30A that performs final grinding on the wafer, and a first rotation means 20A and a second rotation means. 30A moves the third grinding feed means 80 in the Z-axis direction perpendicular to the holding table 10 together with the third grinding feed means 80 in the X direction orthogonal to the Z direction and the Y direction X direction movement means 90.

The third grinding feed means 80 includes a ball screw 81 extending in the Z axis direction, a motor 82 connected to one end of the ball screw 81, a pair of guide rails 83 and 83a extending parallel to the ball screw 81, and one surface. A lifting plate 84 connected to the supports 24 and 34. A pair of guide rails 83 and 83a are slidably connected to the other surface of the lifting plate 84, and a ball screw 81 is screwed into a nut formed at a central portion of the lifting plate 84. In addition, when the ball screw 81 is driven by the motor 82, the lifting plate 84 can be raised and lowered in the ± Z direction along the pair of guide rails 83 and 83a, so that the first rotating means 20A and the second rotating means 30A can be moved together. Lift in the ± Z direction.

As the positional relationship between the first rotation means 20A and the second rotation means 30A, when rough grinding or final grinding is performed, one of the rough grinding vermiculite 27 or the final grinding vermiculite 37 is held by the center of the wafer held by the holding table 10 In the method in which the other side does not contact the wafer, a specific distance is set in the X direction and the lifting plates 84 are respectively connected.

The grinding device 1A is the same as the grinding device 1 and includes a Y-direction moving means 13A and a thickness measuring means 14 for positioning the holding table 10 at the carry-in / out position P1 and the grinding position P2, and at least a control of the grinding means and the Y-direction moving means 13A. Control means 70A. The control means 70A becomes a memory element including a CPU, a memory, and the like. Based on the information stored in the memory element, the holding table 10 holding the wafer is positioned at the grinding position P2 by the Y direction moving means 13 and then by the X direction. After the coarse grinding vermiculite 27 or final grinding vermiculite 37 is positioned by the moving means 90 through the center of the wafer held on the holding table 10, the first grinding means 20A or the second rotation is rotated by the third grinding feed means 80 Means 30A is a structure that performs a grinding feed method and controls.

Next, an operation example of the grinding device 1A will be described. In addition, the control means 70A is the same as the grinding device 1, except that the diameter of the wafer W to be the grinding target shown in FIG. 5 or the thickness before grinding is set in advance, the specific thickness of the rough grinding and the final thickness after the final grinding are set in advance.

First, when the wafer W before grinding is transferred to the holding table 10 which is waiting at the loading / unloading position P1, the holding table 10 attracts and holds the wafer W on the holding surface 10a where the attraction force of the suction source acts. The holding table 10 is rotated at a specific rotation speed. Next, the control means 70A controls the Y-direction moving means 13A to move the holding table 10 linearly in the + Y direction, for example, and positions it at the grinding position P2. Thereafter, as shown in FIG. 5, the control means 70A controls the X-direction moving means 90 to move the third grinding feed means 80 in, for example, the + X direction, and is mounted on the rough grinding wheel 26 as shown in FIG. 4. The rough grinding vermiculite 27 is positioned at a position passing through the center Wo of the wafer W held on the holding table 10 (a position where the outer peripheral portion 260 of the rotating rough grinding wheel 26 always passes the center Wo). At this time, the final grinding wheel 36 constituting the second rotation means 30A is separated from the center Wo of the wafer W at its outer peripheral portion 360 and is positioned at a non-contact position that does not contact the wafer W. The wafer W is subjected to, for example, rough grinding by feed grinding by the first rotation means 20A.

At the time of rough grinding, as with the grinding device 1, the axis of the main shaft 21 shown in FIG. 4 is adjusted by adjusting the shafts 28a and 28b to a specific angle to adjust the grinding surface of the rough grinding vermiculite 27 mounted on the rough grinding wheel 26. It has a parallel positional relationship with the holding surface 10a of the holding table 10. Next, while the rough grinding wheel 26 is rotated at a specific rotation speed, the first grinding means 20A and the second rotation means 30A are lowered together in the -Z direction by the third grinding feed means 80, and the outer periphery of the rough grinding wheel 26 260 always passes through the center Wo of the wafer W, and the rough grinding vermiculite 27 is brought into contact with the arc-shaped grinding portion G3, so that the upper surface of the wafer W is fully rough ground. At this time, although the second rotation means 30A is also lowered at the same time as the first rotation means 20A, since the second rotation means 30A is positioned at the non-contact position, the final grinding wheel 36 may not contact the wafer W. In the rough grinding of the wafer W, the thickness of the wafer W is calculated by the thickness measuring means 14, and when the calculated thickness of the wafer W reaches a specific thickness set by the control means 70A, the rough grinding of the wafer W is ended. In addition, when it is determined that the wafer W is not ground to a specific thickness, the wafer W is roughly ground by the first rotation means 20A until the wafer W reaches a specific thickness.

In addition, during the rough grinding of the wafer W, a grinding preparation for the second rotation means 30A is performed. That is, since the second rotation means 30A is positioned at the above-mentioned non-contact position by the X-direction moving means 90, there is no risk of contact with the wafer W. Therefore, in the rough grinding, for example, a trimming mechanism that can move freely up and down can be used. The final grinding of vermiculite 37 is performed. Although the dressing mechanism is not shown in the figure, it is arranged on the device base 2 on the side of the second rotation means 30A, for example. Accordingly, the wafer W after the rough grinding by the first rotating means 20A can be efficiently subjected to the final grinding.

After the rough grinding of the wafer W is completed, as shown in FIG. 6, the third grinding feed means 80 is moved to, for example, the -X direction by the X-direction moving means 90, and will be mounted on the final grinding wheel 36 in FIG. 4. The final grinding vermiculite 37 shown is positioned at a position passing through the center Wo of the wafer W held on the holding table 10 (a position where the outer peripheral portion 360 of the rotating final grinding wheel 36 always passes the center Wo). At this time, the rough grinding wheel 26 constituting the first rotation means 20A is separated from the center Wo of the wafer W at its outer peripheral portion 260 and is positioned at a non-contact position that does not contact the wafer W. Then, the second grinding means 30A performs the final grinding due to the feed grinding of the wafer W that has been subjected to the rough grinding.

At the time of final grinding, the axis of the main shaft 31 shown in FIG. 4 is inclined by a specific angle by adjusting the shafts 38 a and 38 b to adjust the grinding surface of the final grinding vermiculite 37 mounted on the final grinding wheel 36 and the holding of the holding table 10. The surface 10a has a parallel positional relationship. Next, while the final grinding wheel 36 is rotated at a specific rotation speed, the first grinding means 20A and the second rotation means 30A are lowered together in the Z-axis direction by the third grinding feed means 80, and the outer circumference of the final grinding wheel 36 is finally reduced. 360 always passes through the center Wo of the wafer W, and the final grinding vermiculite 37 is brought into contact with the arc-shaped grinding portion G4, and the final grinding of the wafer W is fully performed. At this time, although the first rotating means 20A is also lowered at the same time as the second rotating means 30A, since the first rotating means 20A is positioned at the non-contact position, the rough grinding wheel 26 may not contact the wafer W. In the final grinding of the wafer W, the thickness of the wafer W is calculated by the thickness measurement means 14, and when the calculated thickness of the wafer W reaches a specific thickness set by the control means 70A, the final grinding of the wafer W is ended. In addition, when it is judged that the wafer W is not ground to the final thickness, the wafer W is finally ground by the second rotation means 30A until it reaches the final thickness.

In addition, in the final grinding of the wafer W, a grinding preparation for the first rotation means 20A is performed. That is, since the first rotation means 20A is positioned at the above-mentioned non-contact position by the X-direction moving means 90, there is no risk of contact with the wafer W. Therefore, in the final grinding, for example, a trimming mechanism capable of moving up and down can be used. Rough grinding of vermiculite 27 was performed. Although the dressing mechanism is not shown in the figure, it is arranged on the device base 2 on the side of the first rotation means 20A, for example. According to this, the rough grinding can be efficiently performed on the wafer W which is subsequently sent to the grinding position P2 shown in FIG. 4 before the grinding.

In this way, the grinding device 1A related to the present invention is provided with a holding means 10, a grinding means for grinding the wafer W held on the holding stand 10, and positioning the holding stand 10 at the loading / unloading position P1 and grinding, respectively. The Y-direction moving means 13A and the control means 70A at the position P2 are provided with a third grinding feed means 80 that makes the first rotation means 20A and the second rotation means 30A perpendicular to the holding table 10 together. Z-direction grinding feed; and X-direction moving means 90, which moves the third grinding feed means 80 in the X direction orthogonal to the Z and Y directions. The first rotation means 20A and the second rotation means 30A only One of the coarse grinding vermiculite 27 or the final grinding vermiculite 37 is arranged in the X direction by a distance Wo between the center Wo of the wafer W held on the holding table 10 and the other side not in contact with the wafer W. Control means In the 70A system, the holding table 10 holding the wafer W is positioned at the grinding position P2 by the Y-direction moving means 13A, and the rough grinding vermiculite 27 or the final grinding vermiculite 37 is positioned by the X-direction moving means 90. Center of wafer W of Taiwan 10 After the Wo position, the first rotation means 20A or the second rotation means 30A is ground and fed by the third grinding feed means 80, and the structure of the wafer W is ground according to this. Therefore, even if the first rotation means 20A and the second The rotating means 30A grinds the feed at the same time, and there is no possibility that one of the rough grinding vermiculite 27 or the final grinding vermiculite 37 passes through the center of the wafer W and the other contacts the wafer W. Accordingly, as described above, in one of the rough grinding of the vermiculite 27 or the final grinding of the vermiculite 37, the wafer W can be ground, and the grinding preparation such as trimming can be performed on the other side without grinding, so that the wafer can be ground efficiently. W.

Although the grinding apparatuses 1 and 1A shown in this embodiment mode are described in the case where the grinding means has two rotation means, it is not limited to this configuration, and also includes the case where the grinding means has one rotation means. In such a grinding device, preparations for grinding, such as grinding of vermiculite, can be performed at timings before the grinding of wafer W is started. In addition, when the grinding means includes a rotation means, when grinding the wafer W, the outer periphery of the grinding wheel provided by such a rotation means always passes through the center Wo of the wafer W shown in FIG. 2. After grinding the wafer W, the rotating means is moved in the + X direction by the X-direction moving means 60, and the grinding wheel is positioned at the same position as the final grinding wheel 36 shown in FIG. 3, and the wafer W is ground to perform grinding Traces cross, which can improve the surface accuracy of the wafer W. In particular, in the case where the wafer W to be researched is made of hard and difficult-to-grind materials, as described above, grinding the wafer W to intersect the grinding marks can make the grinding vermiculite exhibit a dressing effect, and as a result, the grinding can be accelerated. speed.

In this embodiment mode, although the situation caused by the feed grinding is described, it is not limited to the feed grinding, and the holding table holding the wafer W is not rotated. The relative movement of the grinding vermiculite and the holding table is performed from the crystal. The present invention is also applicable to the case where the side surface of the circle W is brought into contact with the grinding vermiculite and the grinding is performed slowly.

Claims (3)

    A grinding device includes a rotatable holding table for holding a wafer, a grinding method for grinding a vermiculite to hold a wafer held on the holding table, and a Y-direction moving means for positioning respectively by using The holding table moves linearly in the Y direction, the loading and unloading positions of the holding table into and out of the wafer, and the grinding position of the wafer held by the holding table by the grinding means; and the control means, which is at least controlled The grinding means and the Y-direction moving means are characterized in that the grinding means is provided with a rotating means which is mounted on a grinding wheel in which a grinding vermiculite is arranged to be rotatable; a grinding feed means which enables the rotating means Grinding feed in the Z direction which is perpendicular to the holding table; and X-direction moving means for moving the grinding feed means in the X direction orthogonal to the Z direction and the Y direction, the control means is After the holding table holding the wafer is positioned at the grinding position by the Y-direction moving means, the grinding vermiculite mounted on the rotating means by the X-direction moving means, After being positioned at a position passing through the center of the wafer held on the holding table, the grinding means is ground and fed by the grinding means to grind the wafer accordingly.         The grinding device according to claim 1, wherein the grinding means includes: a first rotation means that is provided with a rough grinding wheel provided with a rough grinding vermiculite in a ring shape so as to be rotatable; a first grinding feed means, which The first rotating means is ground and fed in the Z direction perpendicular to the holding table; the second rotating means is a final grinding wheel in which a final grinding vermiculite is arranged in a ring shape so as to be rotatable; 2 a grinding feed means for grinding the feed in the Z direction perpendicular to the holding table with the second rotation means; and a moving means for the grinding means in the X direction and the The second grinding feed means moves together in the X direction orthogonal to the Z direction and the Y direction, and the control means positions the holding table holding the wafer at the grinding position by the Y direction moving means. After the rough grinding vermiculite or the final grinding vermiculite is positioned by the center of the wafer held by the holding table by the X-direction moving means, the first grinding feed means or The second grinding feed means feeds the first rotation means or the second rotation means, and grinds the wafer accordingly.         The grinding device according to claim 2, wherein the grinding means is provided with a third grinding feed means for bringing the first rotation means and the second rotation means together toward the Z which is perpendicular to the holding table. Grinding feed in the direction; and the X-direction moving means for moving the third grinding feed means in the X direction orthogonal to the Z direction and the Y direction, the first rotation means and the second rotation means only One of the rough grinding vermiculite or the final grinding vermiculite is arranged at a distance in the X direction through the center of the wafer held by the holding table and the other side is not in contact with the wafer. The above control means is After the holding table holding the wafer is positioned at the grinding position by the Y-direction moving means, the rough grinding vermiculite or the final grinding vermiculite is positioned by the X-direction moving means by being held on the holding table. After the position of the center of the wafer, the first rotating means or the second rotating means is ground and fed together by the third grinding feed means, and the wafer is ground in accordance with this.