TW201810849A - Cell discharge protection device - Google Patents

Abstract

The invention cell discharge protection device, including: low voltage protection circuit and overcurrent protection circuit, set voltage for the cell to discharge to avoid cell damage caused by low voltage and high current.

Description

Battery discharge protection device

The battery discharge protection device of the invention is a technical field of protecting a battery during discharge, comprising: a low voltage protection circuit and an overcurrent protection circuit, in order to protect the battery during discharge, to avoid the battery from being too low voltage and excessive current. damage.

At present, the battery discharge protection IC (Cell Discharge Protection IC) products are not related to the battery in the discharge application. When the battery has a low voltage and when the battery has excessive current or load short circuit, the semiconductor technology can be used to obtain the battery safety protection function. And the description; because the current battery discharge protection integrated circuit product does not have the circuit features described in the present invention, it has become a functional disadvantage of the current battery protection integrated circuit.

The purpose of the invention: The invention applies the first semiconductor and the first semiconductor circuit to protect the battery from excessive voltage and over current or load short circuit during discharge.

The invention applies the third semiconductor and the second semiconductor circuit to protect the battery from excessive voltage and over current or load short circuit during discharge.

The invention has the following features:

1. The present invention is a switching characteristic of a drain current to a gate voltage applied to a first semiconductor or a third semiconductor, and the operation of discharging the battery as a drain current is terminated, and the battery in the discharge is at a low voltage. Perform load and battery open circuit to protect the battery from low voltage.

2. The present invention is a circuit feature for applying a first semiconductor and a first semiconductor circuit It is safe to protect the battery from low voltage, over current or load short circuit during discharge.

3. The present invention is a circuit feature for applying a third semiconductor or a second semiconductor circuit to achieve safety when the battery is subjected to a low voltage, an overcurrent or a load short circuit during discharge.

11‧‧‧Battery

12‧‧‧First Semiconductor

13‧‧‧ Third Semiconductor

14‧‧‧Second Semiconductor

15‧‧‧First pole resistance

16‧‧‧First base resistance

20‧‧‧ Fourth Semiconductor

21‧‧‧Second pole resistance

22‧‧‧Second base resistance

100‧‧‧Charging device

200‧‧‧load

V+‧‧‧ circuit positive terminal

V-‧‧‧ circuit negative terminal

1 is a first schematic view of a battery discharge protection device of the present invention.

2 is a second schematic view of a battery discharge protection device of the present invention.

As shown in FIG. 1 , a first schematic diagram of a battery discharge protection device of the present invention, which includes a first semiconductor 12 and a first semiconductor circuit (First Semiconductor Circuit), the first semiconductor circuit includes a second semiconductor 14 a first collector resistor 15 (First Collector Resistor) and a first base resistor 16 (First Base Resistor), and a terminal C of the second semiconductor 14 is connected to the other end of the first receiver resistor 15 and the gate of the first semiconductor 12 G (Gate, G), one end of the first receiving resistor 15 is connected to the positive circuit terminal V + (Positive Circuit Terminal), and the emitter E (Emitter, E) of the second semiconductor 14 is connected to the source S of the first semiconductor 12 ( Source, S), the base B of the second semiconductor 14 is connected to one end of the first base resistor 16, and the other end of the first base resistor 16 is connected to the negative circuit terminal V- (Negative Circuit Terminal), and the drain of the first semiconductor 12 The D-D (Drain, D) is connected to the negative terminal V- of the circuit, and the first semiconductor 12 is an N-channel Metal-Oxide Semiconductor Field-Effect Transistor, which contains a body diode (Body Diode) ), the second semiconductor 14 is an NPN type transistor (NPN Type Transistor); the source S of the first semiconductor 12 and the emitter E of the second semiconductor 14 are connected to the negative terminal of the battery 11, the positive terminal V+ of the circuit is connected to the positive terminal of the battery 11; and the positive terminal V+ of the circuit is connected to the charging device (Charge The positive terminal G+ of the Device 100 or the positive terminal of the load 200 is connected to the negative terminal G- of the charging device 100 or the negative terminal of the load 200.

As shown in FIG. 1, when the charging device 100 performs a charging operation on the battery 11, the positive terminal G+ of the charging device 100 supplies a positive voltage to the first receiving resistor 15 to the gate G of the first semiconductor 12, at this time, the first The source S and the drain D of the semiconductor 12 are turned on, and the charging current passes through the positive terminal of the battery 11, the negative terminal of the battery 11, the source S of the first semiconductor 12, and the drain D of the first semiconductor 12, and returns. The negative terminal G- of the charging device 100 is charged to the charging operation of the battery 11.

As shown in FIG. 1, when the charging device 100 performs a charging operation on the battery 11, the base B potential of the second semiconductor 14 is lower than the emitter E, so the second semiconductor 14 is in an open circuit state, and does not affect the battery 11. Charging action.

As shown in FIG. 1, when the charging operation is completed, the charging device 100 is changed to the load 200, and the battery 11 performs a discharging operation on the load 200. At this time, the positive terminal of the battery 11 supplies a positive voltage to the first receiving resistor 15 to the first a gate G of the semiconductor 12, so that the source S and the drain D of the first semiconductor 12 are turned on (On circuit), the discharge current thereof passes through the positive terminal of the load 200, the negative terminal of the load 200, and the drain of the first semiconductor 12 The pole D, the source S of the first semiconductor 12, returns to the negative terminal of the battery 11 to achieve the discharge operation of the battery 11; when the battery 11 discharges the load 200 to the battery 11, the voltage of the battery 11 is lower than that of the first semiconductor 12 The relationship between the current and the source voltage characteristic table, the drain current is interrupted, and the battery 11 can be protected by a low voltage.

As shown in FIG. 1, when an overcurrent occurs in the discharge operation of the battery 11 on the load 200, the potential between the drain D and the source S of the first semiconductor 12 rises rapidly, and the base B potential of the second semiconductor 14 at this time The second semiconductor 14 is turned on higher than the emitter E, and the positive potential of the gate G of the first semiconductor 12 is equal to the positive potential of the source S of the first semiconductor 12, so the first semiconductor 12 is open, and the first semiconductor 12 at this time The drain current is interrupted to protect the battery 11 from damage due to an overcurrent. If the second semiconductor 14 is to be turned off, the load 200 can be released, and the conduction state of the second semiconductor 14 can be released. The normal state of the first semiconductor 12 is restored.

As shown in FIG. 1, when the short circuit of the load 200 occurs during the discharge operation of the battery 11 to the load 200, the potential of the base B of the second semiconductor 14 is a positive potential of the circuit, and thus the base B of the second semiconductor 14 The potential of the second semiconductor 14 is higher than the emitter E, and the potential of the gate G of the first semiconductor 12 is equal to the potential of the source S. Therefore, the first semiconductor 12 is open, and the drain current of the first semiconductor 12 is current. The current is interrupted to protect the battery 11 from damage due to the short-circuit of the load 200. If the conduction state of the second semiconductor 14 is to be released, the cause of the short-circuit is removed, and the conduction state of the second semiconductor 14 can be released. A normal state of the semiconductor 12.

As shown in FIG. 2, a second schematic diagram of a battery discharge protection device according to the present invention includes a third semiconductor 13 and a second semiconductor circuit (Second Semiconductor Circuit), and the second semiconductor circuit includes a fourth semiconductor 20, The second receiving resistor 21 and the second base resistor 22, the emitter E of the fourth semiconductor 20 is connected to the source S of the third semiconductor 13, and the receiving end C of the fourth semiconductor 20 is connected to one end of the second receiving resistor 21 and The gate G of the third semiconductor 13, the other end of the second receiving resistor 21 is connected to the negative terminal V- of the circuit, one end of the second base resistor 22 is connected to the positive terminal V+ of the circuit, and the other end of the second base resistor 22 is connected. The base B of the fourth semiconductor 20, the drain D of the third semiconductor 13 is connected to the positive terminal V+ of the circuit, and the third semiconductor 13 is a P-channel metal-Oxide semiconductor field-effect transistor (P Channel Metal-Oxide Semiconductor Field-Effect Transistor) The body contains a body diode, the fourth semiconductor 20 is a PNP type transistor (PNP Type Transistor); the source S of the third semiconductor 13 and the emitter E of the fourth semiconductor 20 are connected to the positive terminal of the battery 11, the circuit Negative terminal V-connected battery 11 negative ; Positively charged end of the circuit connected to V + terminal positively charged electropositive end of the device 100 or the load 200 G +, and the negative terminal V- is electrically connected to a charging circuit electrically negative terminal apparatus 100 G- or a negative electrical terminal 200 of the load.

As shown in FIG. 2, when the charging device 100 performs a charging operation on the battery 11, the negative potential of the gate G of the third semiconductor 13 is higher than the negative potential of the source S of the third semiconductor 13, and the drain of the third semiconductor 13 D and the source S are turned on, and the charging current is from the positive terminal G+ of the charging device 100 to the drain D of the third semiconductor 13, The source S, the positive terminal of the battery 11, and the negative terminal, return to the negative terminal G- of the charging device 100 to perform a charging operation.

As shown in FIG. 2, when the charging device 100 performs a charging operation on the battery 11, the positive potential of the base B of the fourth semiconductor 20 is higher than the emitter E, so the fourth semiconductor 20 is in an open state without affecting the charging of the battery 11. action.

As shown in FIG. 2, when the charging operation is completed, the charging device 100 is changed to the load 200, and the battery 11 performs a discharging operation on the load 200. At this time, the positive terminal of the battery 11 supplies a positive voltage to the source S of the third semiconductor 13. At the same time, the gate G of the third semiconductor 13 has a negative potential from the second receiving resistor 21, and the negative potential of the second receiving resistor 21 is supplied by the negative terminal V- of the circuit, so the source S of the third semiconductor 13 The drain D is turned on, and its discharge current passes through the source S and the drain D of the third semiconductor 13, the positive terminal of the load 200, the negative terminal of the load 200, and returns to the negative terminal of the battery 11, thereby achieving discharge of the battery 11. Action; when the voltage discharged from the battery 11 to the load 200 to the battery 11 is lower than the relationship between the drain current of the third semiconductor 13 and the gate-to-source voltage characteristic table, the drain current is interrupted, and the battery 11 can be obtained. Protection against low voltage.

As shown in FIG. 2, when an overcurrent occurs in the discharge operation of the battery 11 on the load 200, the potential between the source S and the drain D of the third semiconductor 13 rises, and the base B of the fourth semiconductor 20 has a low potential. At the emitter E, the fourth semiconductor 20 is turned on. At this time, the positive potential of the gate G of the third semiconductor 13 is equal to the positive potential of the source S, so the third semiconductor 13 is open, and the drain of the third semiconductor 13 at this time. The current is interrupted to protect the battery 11 from damage due to an overcurrent. If the conduction state of the fourth semiconductor 20 is to be removed, the load 200 can be removed, and the conduction state of the fourth semiconductor 20 can be released. The normal state of the three semiconductors 13.

As shown in FIG. 2, when the battery 11 is short-circuited by the load 200 during the discharge operation of the load 200, the base B of the fourth semiconductor 20 is connected to the negative terminal of the battery 11, and the fourth semiconductor 20 is turned on, so the third semiconductor 13 open circuit, the drain current of the third semiconductor 13 is interrupted, and if the conduction state of the fourth semiconductor 20 is to be released, the cause of the short circuit is removed, and the conduction state of the fourth semiconductor 20 can be released. The normal state of the third semiconductor 13 is restored.

It can be seen from the above operation principle that the present invention is based on the battery 11. In general, the DC power source is represented by a generic battery. Therefore, the present invention may include applying the above-mentioned operating principle to a DC power supply with a low voltage, an excessive current, or Protection of load short circuit, such as general-purpose DC power supply, DC power supply circuit for lighting, and DC power supply control system, etc., without self-limiting.

The above-described embodiments are merely illustrative of the preferred embodiments of the present invention, and the scope of the present invention is not limited thereto. It is to be understood by those skilled in the art that the equivalents and modifications of the present invention are within the scope of the invention, and the scope of the invention is defined by the scope of the patent application.

Claims (10)

A battery discharge protection device for providing a low voltage, excessive current or load short circuit protection during a battery discharge process, the circuit having a circuit positive terminal and a circuit negative terminal, wherein the battery discharge protection device comprises a first semiconductor having a drain, a source and a gate connected to the negative terminal of the circuit; a second semiconductor having a receptor, an emitter and a base, the receptor being connected a gate of the first semiconductor, the emitter is connected to a source of the first semiconductor; a first receiving resistor, one end of the first receiving resistor is connected to the positive terminal of the circuit, and the first receiving resistor is further One end is connected to the receiving end of the second semiconductor; and a first base resistor, one end of the first base resistor is connected to the base of the second semiconductor, and the other end of the first base resistor is connected to the negative terminal of the circuit. The battery discharge protection device of claim 1, wherein the first semiconductor is an N-channel metal oxide semiconductor field effect transistor inclusion body diode. The battery discharge protection device of claim 1, wherein the second semiconductor is an NPN type transistor. The battery discharge protection device of claim 1, wherein a source of the first semiconductor and an emitter of the second semiconductor are connected to a negative terminal of the battery, and a positive terminal of the circuit is connected to a positive terminal of the battery. The battery discharge protection device of claim 1, wherein the positive terminal of the circuit is connected to the positive terminal of the charging device or the positive terminal of the load, and the negative terminal of the circuit is connected to the negative terminal of the charging device or the negative terminal of the load. . A battery discharge protection device for providing a low voltage, excessive current or load short circuit protection during a battery discharge process, the circuit having a circuit positive terminal and a circuit negative terminal, wherein the battery discharge protection device comprises a third semiconductor having a drain, a source and a gate connected to the positive terminal of the circuit; a fourth semiconductor having a receptor, an emitter and a base, the receptor Connecting a gate of the third semiconductor, the emitter being connected to a source of the third semiconductor; a second receiving resistor, one end of the second receiving resistor is connected to the receiving end of the fourth semiconductor, the other end of the second receiving resistor is connected to the negative terminal of the circuit; and a second base resistor, the second The other end of the base resistor is connected to the base of the fourth semiconductor, and one end of the second base resistor is connected to the positive terminal of the circuit. The battery discharge protection device of claim 6, wherein the third semiconductor is a P-channel metal oxide semiconductor field effect transistor inclusion body diode. The battery discharge protection device of claim 6, wherein the fourth semiconductor is a PNP type transistor. The battery discharge protection device of claim 6, wherein the source of the third semiconductor and the emitter of the fourth semiconductor are connected to a positive terminal of the battery, and the negative terminal of the circuit is connected to a negative terminal of the battery. The battery discharge protection device of claim 6, wherein the positive terminal of the circuit is connected to the positive terminal of the charging device or the positive terminal of the load, and the negative terminal of the circuit is connected to the negative terminal of the charging device or the negative terminal of the load. .