TW201814794A - Heat treatment device - Google Patents

Abstract

A heat treatment device capable of appropriately adjusting a temperature of a peripheral portion of a substrate.

The plurality of halogen lamps HL used to prepare for heating the semiconductor wafer W are arranged in a grid pattern and form a rectangular light source region. Two auxiliary lights AHL are arranged at the four corners of the rectangular light source area. Each auxiliary lamp AHL can control the output individually. When the semiconductor wafer W is preheated by the plurality of halogen lamps HL, the temperature of the peripheral edge portion of the semiconductor wafer W facing the four corners of the rectangular light source region is individually adjusted by the auxiliary lamp AHL. Thereby, when the preliminary heating by the halogen lamp H is performed, the temperature of the peripheral portion of the semiconductor wafer W including the portions facing the four corners can be appropriately adjusted, and the semiconductor wafer during the preliminary heating can be adjusted. The in-plane temperature distribution of W becomes uniform.

Description

   Heat treatment device   

The present invention relates to a heat treatment device for heating a thin-plate-shaped precision electronic substrate (hereinafter, simply referred to as a "substrate") by irradiating light to a semiconductor wafer (wafer) or the like.

In the manufacturing process of semiconductor devices, a flash lamp annealing (FLA: flash lamp anneal) that heats a semiconductor wafer in an extremely short time has attracted attention. Flash annealing uses a xenon flash lamp (hereinafter referred to as "xenon flash" for short) to illuminate the surface of a semiconductor wafer, thereby only making the surface of the semiconductor wafer in a short time (several milliseconds). Below) Internal heat treatment technology.

The radiation spectral distribution of the xenon flash lamp ranges from the ultraviolet region to the near-infrared region, and the wavelength is shorter than that of a conventional halogen lamp, and is substantially the same as the basic absorption band of a silicon semiconductor wafer. Therefore, when a semiconductor wafer is irradiated with a flash from a xenon flash lamp, less light is transmitted and the semiconductor wafer can be rapidly heated. In addition, it was also found that as long as the flash irradiation is performed for a very short time of several milliseconds or less, it is possible to selectively heat only the vicinity of the surface of the semiconductor wafer.

Such flash annealing can be used for a process that requires extremely short time heating. For example, it is typically used for activation of impurities that have been implanted in a semiconductor wafer. As long as the surface of a semiconductor wafer implanted with impurities by ion implantation is irradiated with a flash from a flash lamp, the surface of the semiconductor wafer can be heated to the activation temperature in a very short time. In addition, the impurity is not diffused deeply, and only the activation of the impurity can be performed.

As a heat treatment device using such a xenon flash lamp, for example, Patent Document 1 discloses that a flash lamp is disposed on the front side of a semiconductor wafer, a halogen lamp is disposed on the back side, and a desired heat treatment is performed by a combination of these. In the heat treatment apparatus disclosed in Patent Document 1, the semiconductor wafer is preliminarily heated to a certain temperature by a halogen lamp, and then the surface of the semiconductor wafer is heated to a desired processing temperature by flash irradiation from a flash lamp. .

[Prior technical literature]

[Patent Literature]

Patent Document 1: Japanese Patent Application Laid-Open No. 2015-18909.

In the heat treatment apparatus disclosed in Patent Document 1, a plurality of rod-shaped halogen lamps as a preliminary heating source are arranged in a grid pattern on the upper and lower layers to form a rectangular light source region. When the semiconductor wafer is heated by such a preliminary heating source, a problem arises that it is difficult to improve the uniformity of the in-plane temperature distribution of the semiconductor wafer. In particular, it is difficult to adjust the temperature of the peripheral edge portion of the semiconductor wafer facing the four corners of the rectangular light source region. The reason is that, for example, when a peripheral portion of a semiconductor wafer facing the four corners of a rectangular light source region has a temperature higher than the surrounding area (so-called hot spot), when the When the output of the rod-shaped halogen lamp facing the part is reduced, the temperature of other parts of the semiconductor wafer is lower than the surroundings (so-called cold spot).

The present invention has been developed in view of the above-mentioned problems, and an object thereof is to provide a heat treatment device capable of appropriately adjusting the temperature of a peripheral portion of a substrate.

In order to solve the above-mentioned problem, the invention of claim 1 is a heat treatment device for heating a substrate by irradiating the substrate with light. The heat treatment device includes a chamber to store the substrate, and a holding portion to hold the substrate in the chamber. A light irradiating portion, in which a plurality of rod-shaped lamps arranged in a grid shape in two layers are arranged in a rectangular light source region, and the rectangular light source region includes an area facing the main surface of the substrate held by the holding portion; and The auxiliary lights are arranged at the four corners of the rectangular light source area.

The invention of claim 2 is the heat treatment device of the invention of claim 1, wherein the auxiliary lamp has a U-shape.

The invention according to claim 3 is the heat treatment apparatus according to the invention of claim 2, wherein a part of the auxiliary lamp is formed in a shape along an edge portion of the substrate held by the holding portion.

The invention of claim 4 is the heat treatment device of the invention of claim 1, wherein the auxiliary lamp has a rod shape.

The invention according to claim 5 is the heat treatment device according to the invention of claim 4, wherein the auxiliary lamp has the same length as the plurality of rod lamps, and includes a filament at a position closer to one side than the center of the long side (filament).

The invention according to claim 6 is the heat treatment device according to any one of claims 1 to 5, wherein the plurality of rod-shaped lamps include a lamp having filaments at both ends via a central portion in the longitudinal direction.

According to the inventions of claims 1 to 6, since the auxiliary lights are arranged at the four corners of the rectangular light source region where a plurality of rod-shaped lamps are arranged in two layers to form a grid, the peripheral edges of the substrates facing the four corners can be adjusted individually. The temperature of the peripheral portion of the substrate is appropriately adjusted.

1‧‧‧ heat treatment equipment

3‧‧‧Control Department

4‧‧‧ Halogen heating section

5‧‧‧Flash heating section

6‧‧‧ chamber

7‧‧‧ holding department

10‧‧‧ Transfer Agency

11‧‧‧ transfer arm

12‧‧‧ Lifting Pin

13‧‧‧horizontal movement mechanism

14‧‧‧Lifting mechanism

41‧‧‧Frame of halogen heater

43‧‧‧ reflector

51‧‧‧Frame of flash heating unit

52‧‧‧ reflector

53‧‧‧light radiation window

61‧‧‧ side of chamber

62‧‧‧ Recess

63‧‧‧ Upper side chamber window

64‧‧‧ lower side chamber window

65‧‧‧Heat treatment space

66‧‧‧Transport opening

68, 69‧‧‧ reflection ring

71‧‧‧ abutment ring

72‧‧‧ Connection Department

74‧‧‧ Carrier

75‧‧‧ holding plate

75a‧‧‧ holding surface

76‧‧‧ guide ring

77‧‧‧ substrate support pin

78‧‧‧ opening

79‧‧‧through hole

81‧‧‧Gas supply hole

82, 87‧‧‧ buffer space

83‧‧‧Gas supply pipe

84, 89, 192‧‧‧ valves

85‧‧‧Processing gas supply source

86‧‧‧Gas exhaust hole

88、191‧‧‧Gas exhaust pipe

120‧‧‧ radiation thermometer

185‧‧‧Gate valve

190‧‧‧Exhaust

AHL‧‧‧Auxiliary Light

C1 to C3 ‧‧‧ area

FL‧‧‧Flash

HL‧‧‧halogen lamp

SHL‧‧‧ Fragment Light

W‧‧‧Semiconductor wafer

Fig. 1 is a longitudinal sectional view showing the structure of a heat treatment apparatus of the present invention.

FIG. 2 is a perspective view showing the overall appearance of the holding portion.

Fig. 3 is a plan view of a susceptor.

Fig. 4 is a sectional view of a carrier.

Fig. 5 is a plan view of a transfer mechanism.

Figure 6 is a side view of the transfer mechanism.

FIG. 7 is a plan view showing an arrangement of a plurality of halogen lamps.

FIG. 8 is a schematic diagram showing a configuration and configuration of an auxiliary lamp.

FIG. 9 is a plan view of a semiconductor wafer during preliminary heating.

FIG. 10 is a schematic diagram showing the shape of an auxiliary lamp according to the second embodiment.

FIG. 11 is a schematic diagram showing a shape of an auxiliary lamp according to a third embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

    <First Embodiment>    

Fig. 1 is a longitudinal sectional view showing the structure of a heat treatment apparatus 1 according to the present invention. The heat treatment apparatus 1 of this embodiment refers to a flash lamp annealing apparatus that heats the semiconductor wafer W by flash-irradiating the wafer-shaped semiconductor wafer W as a substrate. Although the size of the semiconductor wafer W to be processed is not particularly limited, it is, for example, ψ 300 mm or ψ 450 mm. In addition, in each of the figures in FIG. 1 and subsequent figures, for ease of understanding, the dimensions or numbers of the parts are exaggerated or simplified as necessary.

The heat treatment device 1 is provided with a chamber 6 for containing a semiconductor wafer W, a flash heating section 5 with a plurality of built-in flashes FL, and a halogen heating section 4 with a plurality of built-in halogen lamps HL. A flash heating section 5 is provided on the upper side of the chamber 6, and a halogen heating section 4 is provided on the lower side. The heat treatment apparatus 1 is provided inside the chamber 6 with a holding section 7 for holding the semiconductor wafer W in a horizontal posture, and a transfer mechanism 10 for performing the semiconductor wafer W between the holding section 7 and the outside of the apparatus. Of transfer. Further, the heat treatment apparatus 1 includes a control unit 3 for controlling each operation mechanism of the halogen heating unit 4, the flash heating unit 5, and the chamber 6 to perform heat treatment of the semiconductor wafer W.

The chamber 6 is formed by mounting a chamber window made of quartz on the cylindrical chamber side portion 61. The chamber side portion 61 has a generally cylindrical shape with an upper and lower opening, and an upper chamber window 63 is installed to close the upper opening, and a lower chamber window 64 is installed to close the lower opening. The upper chamber window 63 constituting the top plate portion of the chamber 6 is a disc-shaped member formed of quartz, and has a function as a quartz window that allows the flash emitted from the flash heating portion 5 to penetrate into the chamber 6. . The lower chamber window 64 constituting the bottom plate portion of the chamber 6 is also a disc-shaped member formed of quartz, and has a quartz window that allows light from the halogen heating unit 4 to penetrate into the chamber 6. Functions.

Further, a reflection ring 68 is attached to the upper portion of the wall surface inside the chamber side portion 61, and a reflection ring 69 is attached to the lower portion. Both the reflection rings 68 and 69 are formed in a ring shape. The upper reflection ring 68 is fitted by being fitted from the upper side of the chamber side portion 61. On the other hand, the lower reflection ring 69 is installed by being fitted from the lower side of the chamber side portion 61 and fixed with a small screw (not shown). That is, the reflection rings 68 and 69 are both detachably mounted on the chamber side portion 61. The inner space of the chamber 6, that is, the space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side 61 and the reflection rings 68, 69 is defined as the heat treatment space 65.

When the reflection rings 68 and 69 are attached to the chamber side portion 61, a recessed portion 62 can be formed on the inner wall surface of the chamber 6. That is, a recessed portion 62 surrounded by a central portion of the inner wall surface of the chamber side portion 61 where the reflection rings 68 and 69 are not mounted, a lower end surface of the reflection ring 68, and an upper end surface of the reflection ring 69 is formed. The recessed portion 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the chamber 6 and surrounds the holding portion 7 for holding the semiconductor wafer W. The cavity side portion 61 and the reflection rings 68 and 69 are formed of a metal material (for example, stainless steel) having excellent strength and heat resistance.

Further, a transfer opening (furnace port) 66 is formed in the chamber side portion 61 for carrying in and out of the semiconductor wafer W into the chamber 6. The conveyance opening 66 can be opened and closed by a gate valve 185. The conveyance opening portion 66 communicates with the outer peripheral surface of the recessed portion 62. Therefore, when the transfer opening 66 is opened by the gate valve 185, the semiconductor wafer W can be carried into the heat treatment space 65 and the semiconductor wafer W can be carried out from the heat treatment space 65 through the concave portion 62 from the transfer opening 66. When the gate valve 185 closes the conveyance opening 66, the heat treatment space 65 in the chamber 6 is formed as a closed space.

A gas supply hole 81 is formed in the upper part of the inner wall of the chamber 6 to supply a processing gas to the heat treatment space 65. The gas supply hole 81 may be formed at a position higher than the recessed portion 62 and provided at the reflection ring 68. The gas supply hole 81 is connected to the gas supply pipe 83 through a buffer space 82 formed in an annular shape inside the side wall of the chamber 6. The gas supply pipe 83 is connected to a processing gas supply source 85. A valve 84 is inserted in the middle of the path of the gas supply pipe 83. When the valve 84 is opened, the processing gas is supplied from the processing gas supply source 85 to the buffer space 82. The processing gas system that has flowed into the buffer space 82 flows into the buffer space 82 having a smaller fluid resistance than the gas supply hole 81 and is supplied from the gas supply hole 81 into the heat treatment space 65. As the processing gas system, an inert gas such as nitrogen (N ₂ ) or a reactive gas (such as nitrogen in this embodiment) such as oxygen (O ₂ ) and ammonia (NH ₃ ) can be used.

On the other hand, a gas exhaust hole 86 is formed in the lower portion of the inner wall of the chamber 6 to discharge the gas in the heat treatment space 65. The gas exhaust hole 86 may be formed at a position lower than the recessed portion 62 and provided at the reflection ring 69. The gas exhaust hole 86 is connected to the gas exhaust pipe 88 through a buffer space 87 formed in an annular shape inside the side wall of the chamber 6. The gas exhaust pipe 88 is connected to the exhaust section 190. A valve 89 is inserted in the middle of the path of the gas exhaust pipe 88. When the valve 89 is opened, the gas in the heat treatment space 65 is discharged from the gas exhaust hole 86 to the gas exhaust pipe 88 through the buffer space 87. Further, the gas supply holes 81 and the gas exhaust holes 86 may be provided in the circumferential direction of the chamber 6 or may be slit-shaped. The processing gas supply source 85 and the exhaust unit 190 may be a mechanism provided in the heat treatment apparatus 1 or a facility of a factory in which the heat treatment apparatus 1 can be installed.

A gas exhaust pipe 191 is also connected to the front end of the transport opening 66 to discharge the gas in the heat treatment space 65. The gas exhaust pipe 191 is connected to the exhaust unit 190 through a valve 192. By opening the valve 192, the gas in the chamber 6 can be exhausted through the conveyance opening 66.

FIG. 2 is a perspective view showing the overall appearance of the holding portion 7. The holding portion 7 includes a base ring 71, a connecting portion 72, and a carrier 74. The abutment ring 71, the connecting portion 72, and the carrier 74 are all formed of quartz. That is, the entire holding portion 7 is formed of quartz.

The abutment ring 71 refers to a circular-arc-shaped quartz member lacking a part of the ring shape. This missing portion is provided to prevent interference between the transfer arm 11 and the abutment ring 71 of the transfer mechanism 10 described later. The abutment ring 71 is placed on the bottom surface of the recessed portion 62 so that it can be supported by the wall surface of the chamber 6 (see Fig. 1). On the upper surface of the abutment ring 71, a plurality of connecting portions 72 (four in this embodiment) are provided vertically along the circumferential direction of the annular shape. The connecting portion 72 is also a member of quartz, and can be adhesively fixed to the abutment ring 71 by welding.

The carrier 74 is supported by four connecting portions 72 provided on the abutment ring 71. FIG. 3 is a plan view of the carrier 74. FIG. 4 is a cross-sectional view of the carrier 74. The carrier 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77. The holding plate 75 is a substantially circular flat plate member made of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a larger planar size than the semiconductor wafer W.

A guide ring 76 is provided on a peripheral edge portion of the upper surface of the holding plate 75. The guide ring 76 refers to a ring-shaped member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, when the diameter of the semiconductor wafer W is ψ 300 mm, the inner diameter of the guide ring 76 is 320 320 mm. The inner periphery of the guide ring 76 is formed as a tapered surface that widens upward from the holding plate 75. The guide ring 76 is made of the same quartz as the holding plate 75. The guide ring 76 can be welded to the upper surface of the holding plate 75 or can be fixed to the holding plate 75 by pins or the like formed by different processes. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integrated member.

A region on the upper surface of the holding plate 75 that is inward of the guide ring 76 serves as a planar holding surface 75a for holding the semiconductor wafer W. A plurality of substrate support pins 77 are erected on the holding surface 75 a of the holding plate 75. In the present embodiment, a total of 12 substrate support pins 77 are erected every 30 ° along the circumference that is concentric with the outer circle (outer circle of the guide ring 76) of the holding surface 75a. The diameter of a circle in which 12 substrate support pins 77 are arranged (the distance between the opposite substrate support pins 77) is smaller than the diameter of the semiconductor wafer W. If the diameter of the semiconductor wafer W is ψ 300 mm, the diameter is ψ 270 mm to ψ 280 mm (in this embodiment, ψ 280 mm). The respective substrate support pins 77 are made of quartz. The plurality of substrate support pins 77 may be provided on the upper surface of the holding plate 75 by welding, or may be integrally processed with the holding plate 75.

Returning to FIG. 2, the four connecting portions 72 erected on the abutment ring 71 and the peripheral edge portion of the holding plate 75 of the carrier 74 are adhered and fixed by welding. That is, the carrier 74 and the abutment ring 71 are fixedly connected by the connecting portion 72. By supporting the abutment ring 71 of the holding portion 7 on the face of the cavity 6, the holding portion 7 can be mounted on the cavity 6. In a state where the holding portion 7 is attached to the chamber 6, the holding plate 75 of the carrier 74 is in a horizontal posture (a posture in which the normal line matches the vertical direction). That is, the holding surface 75a of the holding plate 75 becomes a horizontal plane.

The semiconductor wafer W that has been carried into the chamber 6 is placed in a horizontal posture and held above the carrier 74 of the holding portion 7 mounted in the chamber 6. At this time, the semiconductor wafer W is supported and held on the carrier 74 by 12 substrate support pins 77 erected on the holding plate 75. More specifically, the upper ends of the twelve substrate support pins 77 contact the lower surface of the semiconductor wafer W to support the semiconductor wafer W. Since the height of the 12 substrate support pins 77 (the distance from the upper end of the substrate support pin 77 to the holding surface 75a of the holding plate 75) is uniform, the semiconductor wafer can be supported in a horizontal posture by the 12 substrate support pins 77. .

The semiconductor wafer W is supported at a predetermined interval from the holding surface 75 a of the holding plate 75 by a plurality of substrate support pins 77. The thickness of the guide ring 76 is larger than the height of the substrate support pin 77. Therefore, the horizontal positional deviation of the semiconductor wafer W supported by the plurality of substrate support pins 77 can be prevented by the guide ring 76.

As shown in FIGS. 2 and 3, the holding plate 75 of the carrier 74 is formed with an opening portion 78 penetrating up and down. The opening portion 78 is provided to receive radiation light (infrared light) radiated from the lower surface of the semiconductor wafer W held by the carrier 74 by the radiation thermometer 120 (see FIG. 1). That is, the radiation thermometer 120 receives the light radiated from the lower surface of the semiconductor wafer W held by the carrier 74 through the opening 78, and measures the semiconductor wafer by a detector provided separately. The temperature of W. Further, the holding plate 75 of the carrier body 74 is provided with four through holes 79 penetrating through the lift pin 12 of the transfer mechanism 10 to be described later for transferring the semiconductor wafer W.

FIG. 5 is a plan view of the transfer mechanism 10. 6 is a side view of the transfer mechanism 10. As shown in FIG. The transfer mechanism 10 includes two transfer arms 11. The transfer arm 11 is formed in a circular arc shape along a generally annular concave portion 62. Two lifting pins 12 are erected on each transfer arm 11. Each transfer arm 11 can be rotated by a horizontal movement mechanism 13. The horizontal movement mechanism 13 moves the pair of transfer arms 11 horizontally between the transfer operation position (the solid line position in FIG. 5) and the retreat position (the two-point chain line position in FIG. 5) with respect to the holding portion 7. The loading operation position is for transferring the semiconductor wafer W, and the retreat position does not overlap the semiconductor wafer W held by the holding section 7 in a plan view. As the horizontal movement mechanism 13, either the respective transfer arms 11 can be individually rotated by individual motors, or a pair of transfer arms 11 can be linked and rotated by a link mechanism and one motor.

In addition, the pair of transfer arms 11 are moved up and down together with the horizontal movement mechanism 13 by a lifting mechanism 14. When the lifting mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, a total of four lifting pins 12 pass through the through-hole 79 (see FIGS. 2 and 3) penetrating the carrier 74 and the lifting pins 12 The upper end of 12 protrudes from the upper surface of the carrier 74. On the other hand, when the lifting mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position and withdraws the lifting pin 12 from the through hole 79, and the horizontal moving mechanism 13 moves to open the pair of transfer arms 11, each The transfer arm 11 moves to the retreat position. The retracted position of the pair of transfer arms 11 is directly above the abutment ring 71 of the holding portion 7. Since the abutment ring 71 is placed on the bottom surface of the recessed portion 62, the retreat position of the transfer arm 11 becomes the inside of the recessed portion 62. In addition, an exhaust mechanism (not shown) is provided near the portion where the drive unit (the horizontal movement mechanism 13 and the elevator 14) of the transfer mechanism 10 is provided, and the atmosphere around the drive unit of the transfer mechanism 10 is provided. It is constructed so that it can be discharged to the outside of the chamber 6.

Returning to FIG. 1, the flash heating section 5 provided above the chamber 6 is configured by including a light source and a reflector 52 inside the frame body 51. The light source is composed of a plurality of light sources (30 in this embodiment). (Root) A xenon flash FL. The reflector 52 is provided so as to cover the light source. A light radiation window 53 is attached to the bottom of the frame 51 of the flash heating unit 5. The light radiation window 53 constituting the bottom plate portion of the flash heating portion 5 refers to a plate-shaped quartz window formed of quartz. The flash heating section 5 is provided above the chamber 6 so that the light radiation window 53 and the upper chamber window 63 face each other. The flash FL is used to illuminate the heat treatment space 65 through the light radiation window 53 and the upper chamber window 63 from above the chamber 6.

The plurality of flashes FL are each a rod-shaped lamp having a long cylindrical shape, and along the main surface of the semiconductor wafer W held by the holding portion 7 in the respective long side directions (in other words, along the horizontal (Directions) are arranged in a planar shape so as to be parallel to each other. Therefore, the plane formed by the arrangement of the flashes FL is also a horizontal plane.

The xenon flash FL system includes a rod-shaped glass tube (discharge tube) with an anode and a cathode connected to a capacitor at both ends thereof with xenon gas sealed therein, and a trigger electrode. Is attached to the outer peripheral surface of the glass tube. Since xenon is an electrical insulator, even if electric charges are accumulated in the capacitor, no electric current flows into the glass tube in a normal state. However, when a high voltage is applied to the trigger electrode and the insulation is destroyed, the electricity accumulated in the capacitor will flow into the glass tube instantaneously, and light will be released by the excitation of xenon atoms or molecules at that time. In such a xenon flash FL, since the electrostatic energy accumulated in the capacitor in advance is converted into an extremely short light pulse of 0.1 milliseconds to 100 milliseconds, a light source having a continuous light source such as a halogen lamp HL can The characteristic of shining extremely strong light. That is, the flash FL refers to a pulsed light emitting lamp that emits light instantaneously within a very short time of less than 1 second. In addition, the light emission time of the flash FL can be adjusted by a coil constant of a lamp power source that supplies power to the flash FL.

The reflector 52 is provided above the plurality of flashes FL so as to cover the entirety of the plurality of flashes FL. The basic function of the reflector 52 is to reflect the flashes emitted from the plurality of flashes FL to the side of the heat treatment space 65. The reflector 52 is formed of an aluminum alloy plate, and its surface (the surface facing the flash FL side) is roughened by blasting.

The halogen heating unit 4 provided below the chamber 6 has a plurality of (40 in this embodiment) built-in halogen lamps HL as a main light source. The halogen heating section 4 is a light irradiation section for heating the semiconductor wafer W by a plurality of halogen lamps HL from below the chamber 6 through the lower chamber window 64 to irradiate light to the heat treatment space 65.

FIG. 7 is a plan view showing the arrangement of a plurality of halogen lamps HL as the main light source of the halogen heating section 4. The 40 halogen lamps HL are arranged in two levels. Twenty halogen lamps HL are arranged on the upper layer closer to the holding section 7, and 20 halogen lamps HL are also arranged on the lower layer farther from the holding section 7 than the upper layer. Each halogen lamp HL refers to a rod-shaped lamp having a long cylindrical shape. The halogen lamps HL, each of which has 20 upper and lower layers, are parallel to each other along the major surface (in other words, the horizontal direction) of the semiconductor wafer W held by the holding portion 7 in their respective long side directions. Arranged. Therefore, the upper and lower layers are horizontal planes formed by the arrangement of the halogen lamps HL.

As shown in FIG. 7, in the upper layer and the lower layer, the arrangement density of the halogen lamps HL in a region facing the peripheral edge portion of the semiconductor wafer W held by the holding portion 7 is higher than that of the halogen lamps HL. The arrangement density of the halogen lamps HL in a region facing the central portion of the semiconductor wafer W held by the holding portion 7 is higher. That is, the arrangement pitch of the halogen lamps HL in the upper and lower layers is that the peripheral portion of the lamp arrangement is shorter than the central portion. Therefore, a larger amount of light can be irradiated to the peripheral portion of the semiconductor wafer W, which is liable to decrease in temperature during heating by light irradiation from the halogen heating portion 4.

In addition, the lamp group composed of the halogen lamp HL on the upper layer and the lamp group composed of the halogen lamp HL on the lower layer are arranged in a lattice pattern. That is, a total of 40 halogen lamps HL are arranged so that the long-side directions of the 20 halogen lamps HL arranged in the upper layer and the long-side directions of the 20 halogen lamps HL arranged in the lower layer are orthogonal to each other. By arranging a plurality of rod-shaped halogen lamps HL on the upper and lower layers to form a grid, a rectangular light source region can be formed.

The halogen lamp HL refers to a light source of a filament system in which a filament is heated and glows by energizing a filament arranged inside a glass tube. A gas formed by introducing a trace amount of a halogen element (iodine, bromine, etc.) into an inert gas such as nitrogen or argon is enclosed in the glass tube. By introducing a halogen element, it is possible to set the temperature of the filament to a high temperature while suppressing the breakage of the filament. Therefore, the halogen lamp HL has a longer life and can continuously irradiate stronger light than ordinary white light bulbs. That is, the halogen lamp HL means a continuous lighting lamp that continuously emits light for at least 1 second. Moreover, since the halogen lamp HL is a rod-shaped lamp, it has a long life, and by arranging the halogen lamp HL in a horizontal direction, the radiation efficiency of the semiconductor wafer W upward can be excellent.

The 40 halogen lamps HL contain four special lamps made by splitting the filaments. In the case of a lamp which is divided into such filaments, it is called segment lamp SHL. However, the appearance and shape of the segment lamp SHL refers to a filament-shaped light source having the same size and shape as other ordinary 36 halogen lamps HL and equipped with a filament in an inert gas into which a small amount of halogen element has been introduced. The segment lamp SHL is the same as other halogen lamps HL. Therefore, in the case where it is not necessary to distinguish the segment lamp SHL in particular, the other ordinary 36 halogen lamps HL and the four segment lamps SHL are collectively simply referred to as a halogen lamp HL.

A reflector 43 (FIG. 1) is also provided in the housing 41 of the halogen heating section 4 under the two-layer halogen lamp HL. The reflector 43 reflects the light emitted from the plurality of halogen lamps HL to the side of the heat treatment space 65.

In addition, in the halogen heating section 4 of this embodiment, in addition to the 40 halogen lamps HL as the main light source, an auxiliary lamp AHL as an auxiliary light source is also provided. FIG. 8 is a schematic diagram showing the configuration of the auxiliary lamp AHL. In the same figure, for the convenience of illustration, the ordinary 36 halogen lamps HL are shown with dotted lines. The so-called ordinary halogen lamp HL refers to a lamp in which an undivided filament is arranged from one end side of a rod-shaped glass tube to the other end side. 8 shows the segment lamp SHL differently from the ordinary halogen lamp HL, and the semiconductor wafer W held by the holding section 7 is projected and displayed.

As shown in FIG. 8, in a rectangular light source region formed by arranging 40 rod-shaped halogen lamps HL in two layers above and below, a semiconductor wafer W held by the holding portion 7 is completely included. The area the Lord faces.

The segment lamp SHL is provided with a filament at both ends via a central portion in the longitudinal direction of the rod-shaped glass tube. The filament is formed by winding a thin wire such as tungsten in multiple layers at a predetermined density. The segment lamp SHL is connected to the filaments on both sides by a linear tungsten wire of the same material as the filament. When power is applied to the segment lamp SHL, only the filaments on both sides formed by the halving will become white and glow. That is, the segment lamp SHL does not emit light at the central portion in the longitudinal direction of the rod-shaped glass tube, but emits light at both sides across the central portion.

In the arrangement of the grid-like lamps on the upper and lower levels, two segment lamps SHL are included in each of the upper and lower levels. As shown in FIG. 8, a total of four filaments are arranged so that a total of four filaments face the periphery of the semiconductor wafer W corresponding to the four corners of the rectangular light source region formed by the 40 halogen lamps HL. Root fragment light SHL. Therefore, each of the segment lamps SHL irradiates light to two of the peripheral portions of the semiconductor wafer W facing the four corners of the rectangular light source region. In addition, hereinafter, the peripheral portion of the semiconductor wafer W that faces the four corners of the rectangular light source region formed by the 40 halogen lamps HL will be referred to as "four corners of the semiconductor wafer W".

Eight halogen lamps AHL are arranged in the halogen heating section 4 as auxiliary light sources. In the first embodiment, the external shape of each auxiliary lamp AHL is a U shape. The lighting method of each auxiliary lamp AHL is the same filament method as the halogen lamp HL described above. In other words, the auxiliary lamp AHL is a U-shaped glass tube that is filled with an inert gas in which a halogen element has been introduced in a trace amount, and is provided with a U-shaped filament.

The eight auxiliary lamps AHL are arranged at two corners of a rectangular light source region formed by 40 halogen lamps HL. The eight auxiliary lights AHL are individually controlled by the control unit 3 for output. As shown in FIG. 8, each auxiliary lamp AHL is arranged such that the front end portion faces the four corners of the semiconductor wafer W. Thereby, each auxiliary lamp AHL can illuminate any one of the four corners of the semiconductor wafer W by lighting.

The control unit 3 controls the above-mentioned various operating mechanisms provided in the heat treatment apparatus 1. The configuration of the hardware as the control unit 3 is the same as that of a general computer. That is, the control unit 3 is provided with: a CPU (Central Processing Unit; central processing unit), which is a circuit for performing various arithmetic processing; a ROM (Read Only Memory), which reads a memory basic program Dedicated memory; RAM (Random Access Memory) is a read-write memory that stores various information; and magnetic disks are software or data for memory control in advance. The processing in the heat treatment apparatus 1 is performed by the CPU of the control unit 3 executing a predetermined processing program.

In addition to the above-mentioned configuration, in order to prevent excessive temperature rise of the halogen heating section 4, the flash heating section 5, and the chamber 6 due to the thermal energy generated from the halogen lamp HL and the flash FL during heat treatment of the semiconductor wafer, The heat treatment apparatus 1 is also provided with various cooling structures. For example, a water cooling pipe (not shown) is provided in the wall system of the chamber 6. In addition, the halogen heating section 4 and the flash heating section 5 are formed as an air-cooled structure in which a gas flow is formed inside to exhaust heat. In addition, air is also supplied between the upper chamber window 63 and the light radiation window 53 to cool the flash heating section 5 and the upper chamber window 63.

Next, a processing procedure of the semiconductor wafer W in the heat treatment apparatus 1 will be described. The semiconductor wafer W to be processed here refers to a semiconductor substrate to which impurities (ions) are added by an ion implantation method. The activation of the impurities is performed by the flash irradiation heat treatment (annealing) of the heat treatment apparatus 1. The processing sequence of the heat treatment apparatus 1 described below is performed by the control unit 3 controlling each operation mechanism of the heat treatment apparatus 1.

First, the gate valve 185 is opened and the transfer opening portion 66 is opened, and a semiconductor robot W is transferred into the heat treatment space 65 in the chamber 6 through the transfer opening portion 66 by a transfer robot outside the apparatus. The semiconductor wafer W carried by the transfer robot is stopped by being moved in and out to a position directly above the holding portion 7. Then, the pair of transfer arms 11 of the transfer mechanism 10 are horizontally moved from the retracted position to the transfer operation position and raised, whereby the lift pin 12 passes through the through hole 79 and protrudes from the upper surface of the holding plate 75 of the carrier 74 Receives a semiconductor wafer W. At this time, the lift pin 12 is raised to a position higher than the upper end of the substrate support pin 77.

After the semiconductor wafer W is placed on the lift pin 12, the transfer robot is withdrawn from the heat treatment space 65, and the transfer opening 66 is closed by the gate valve 185. When the pair of transfer arms 11 is lowered, the semiconductor wafer W can be transferred from the transfer mechanism 10 to the carrier 74 of the holding portion 7 and held in a horizontal posture from below. The semiconductor wafer W is supported and held on the carrier 74 by a plurality of substrate support pins 77 erected on the holding plate 75. In addition, the semiconductor wafer W is held on the holding portion 7 with a surface on which patterning has been completed and impurities are implanted as an upper surface. A predetermined interval is formed between the back surface (the main surface opposite to the surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75a of the holding plate 75. The pair of transfer arms 11 that have been lowered below the carrier 74 are retreated to the retreat position by the horizontal moving mechanism 13, that is, retreat to the inside of the recess 62.

After the conveyance opening 66 is closed by the gate valve 185 and the heat treatment space 65 is formed as a closed space, the atmosphere inside the chamber 6 is adjusted. Specifically, the valve 84 is opened and the processing gas is supplied to the heat treatment space 65 from the gas supply hole 81. In this embodiment, nitrogen is supplied as a processing gas to the heat treatment space 65 in the chamber 6. In addition, the valve 89 is opened, and the gas inside the chamber 6 is exhausted from the gas exhaust hole 86. Thereby, the processing gas supplied from the upper part of the heat treatment space 65 in the chamber 6 flows downward and is discharged from the lower part of the heat treatment space 65, whereby the heat treatment space 65 can be replaced with a nitrogen atmosphere. Further, by opening the valve 192, the gas inside the chamber 6 can be discharged from the conveyance opening 66. Furthermore, the atmosphere around the drive section of the transfer mechanism 10 can be exhausted by an exhaust mechanism (not shown).

After the interior of the chamber 6 is replaced with a nitrogen atmosphere, and the semiconductor wafer W is held from below by the carrier 74 of the holding portion 7 in a horizontal posture, the 40 halogen lamps HL of the halogen heating portion 4 are turned on together to start preparation Heating (assist heating). The halogen light emitted from the halogen lamp HL passes through the lower chamber window 64 and the carrier 74 formed of quartz, and is irradiated from the back surface of the semiconductor wafer W. By receiving light irradiation from the halogen lamp HL, the semiconductor wafer W can be preheated and the temperature can be increased. In addition, since the transfer arm 11 of the transfer mechanism 10 is retracted to the inside of the recessed portion 62, it does not cause an obstacle to heating by the halogen lamp HL.

When the preliminary heating by the halogen lamp HL is performed, the temperature of the semiconductor wafer W can be measured by the radiation thermometer 120. That is, the radiation thermometer 120 receives the infrared light radiated from the back surface of the semiconductor wafer W held by the carrier 74 through the opening 78 and measures the temperature of the wafer while the temperature is increasing. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3. The control unit 3 controls the output of the halogen lamp HL while monitoring whether or not the temperature of the semiconductor wafer W heated by the irradiation of light from the halogen lamp HL has reached a predetermined preliminary heating temperature T1. That is, the control unit 3 returns control of the output of the halogen lamp HL based on the measurement value measured by the radiation thermometer 120 so that the temperature of the semiconductor wafer W becomes the preliminary heating temperature T1. The preliminary heating temperature T1 is set to about 200 ° C to 800 ° C, and preferably about 350 ° C to 600 ° C (600 ° C in this embodiment).

After the temperature of the semiconductor wafer W has reached the preliminary heating temperature T1, the control unit 3 temporarily maintains the semiconductor wafer W at the preliminary heating temperature T1. Specifically, at a time point when the temperature of the semiconductor wafer W measured by the radiation thermometer 120 has reached the pre-heating temperature T1, the control unit 3 adjusts the output of the halogen lamp HL and maintains the temperature of the semiconductor wafer W at approximately Preliminary heating temperature T1.

However, all the 40 halogen lamps HL of the halogen heating section 4 are rod-shaped lamps. Then, among the 40 halogen lamps HL, four segment lamps SHL are included to adjust the temperature of the four corners of the semiconductor wafer W. During the preliminary heating of the semiconductor wafer W by the halogen lamp HL, the temperature near the peripheral portion of the semiconductor wafer W tends to be different from the temperature at the center, especially the temperature at the four corners of the semiconductor wafer W. Easy to become uneven. Therefore, the four corners of the semiconductor wafer W can be irradiated with light from the segment lamp SHL to adjust the temperature of the four corners.

However, only the adjustment performed by the segment lamp SHL will leave the following problems. FIG. 9 is a plan view of the semiconductor wafer W during preliminary heating. As a result of using the adjustment of the segment lamp SHL to improve the uniformity of the temperature distribution in the entire surface of the semiconductor wafer W, the temperature of only one of the four corners of the semiconductor wafer W may become higher than other temperatures. The area is higher and becomes a hot spot. The reason why the temperature difference at only one of the four corners of the semiconductor wafer W is caused by the structure of the chamber 6 may not be symmetrical due to the presence of the conveyance opening 66 or the like.

As shown in FIG. 9, a hot spot appears in a region C1 in one of the four corners of the semiconductor wafer W. In order to eliminate this hot spot, it is necessary to reduce the output of the segment lamp SHL that irradiates the area C1 with light. However, because each of the segment lamps SHL irradiates light to two of the four corners of the semiconductor wafer W, if the output of the segment lamp SHL that irradiates light to the region C1 is reduced, the semiconductor wafer W The area C2 or area C3 will have lower illuminance and lower temperature. In this way, while eliminating the hot spots in area C1, cold spots will occur in area C2 or area C3. As a result, the uniformity of the in-plane temperature distribution as a whole of the semiconductor wafer W is not improved. In other words, it is difficult to individually adjust the temperature of only a specific portion of the four corners of the semiconductor wafer W.

Therefore, the illuminance of each corner of the four corners of the semiconductor wafer W is individually adjusted by the auxiliary lamp AHL. Since each auxiliary lamp AHL irradiates light to only one of the four corners of the semiconductor wafer W, the illuminance of the four corners can be adjusted individually. For example, in the above example, if the output of the segment lamp SHL that irradiates light to the area C1 where the hot spot has appeared is reduced, and the illuminance of the area C2 or C3 is reduced, it can be changed from The auxiliary lamp AHL performs light irradiation to suppress a decrease in the illuminance of the region C2 or the region C3.

By doing so, the temperature of each of the four corners of the semiconductor wafer W during the preliminary heating can be individually adjusted, and the temperature of the peripheral portion of the semiconductor wafer W including the four corners can be adjusted appropriately. As a result, the uniformity of the in-plane temperature distribution as a whole of the semiconductor wafer W can be improved.

When the temperature of the semiconductor wafer W reaches the pre-heating temperature T1 and a predetermined time has elapsed, the flash FL of the flash heating section 5 flash-irradiates the surface of the semiconductor wafer W. At this time, a part of the flash light radiated from the flash FL is directly directed to the inside of the cavity 6, and the other part is temporarily reflected by the reflector 52 before being directed to the inside of the cavity 6. By such a flash light irradiation, Flash heating of the semiconductor wafer W is performed.

Since the flash heating is performed by flash irradiation from the flash FL, the surface temperature of the semiconductor wafer W can be raised in a short time. That is, the flash light irradiated from the flash FL refers to an extremely short and strong flash light in which the electrostatic energy stored in the capacitor is converted into an extremely short light pulse and the irradiation time is about 0.1 milliseconds to 100 milliseconds. Then, the surface temperature of the semiconductor wafer W heated by the flash light from the flash FL is instantaneously raised to a processing temperature T2 of 1000 ° C. or higher, and after the impurities implanted in the semiconductor wafer W are activated, The surface temperature drops rapidly. In this way, since the surface temperature of the semiconductor wafer W can be raised and lowered in an extremely short time in the heat treatment apparatus 1, impurities can be carried out while suppressing diffusion due to the heat of the impurities implanted in the semiconductor wafer W. Of activation. Furthermore, since the time required for the activation of an impurity is extremely short compared to the time required for the thermal diffusion of the impurity, the activity can be completed even in a short time without diffusion of about 0.1 to 100 milliseconds. Into.

In this embodiment, the temperature of each of the four corners of the semiconductor wafer W is individually adjusted by the auxiliary lamp AHL, so that the in-plane temperature distribution of the semiconductor wafer W in the preliminary heating stage is uniform. As a result, the in-plane temperature distribution of the surface of the semiconductor wafer W during the flash irradiation can be made uniform.

After the flash heating process is completed, the halogen lamp HL is turned off after a predetermined time has elapsed. Thereby, the semiconductor wafer W is rapidly cooled down from the preliminary heating temperature T1. The temperature of the semiconductor wafer W during the temperature reduction is measured by the radiation thermometer 120, and the measurement result is transmitted to the control unit 3. The control unit 3 monitors whether the temperature of the semiconductor wafer W has been lowered to a predetermined temperature based on the measurement result of the radiation thermometer 120. Then, after the temperature of the semiconductor wafer W falls below a predetermined value, the pair of transfer arms 11 of the transfer mechanism 10 will move horizontally from the retreat position to the transfer operation position and rise again, whereby the lift pin 12 will move from the carrier. The upper surface of 74 protrudes and receives the heat-treated semiconductor wafer W from the carrier 74. Next, the transfer opening 66 closed by the gate valve 185 is opened, and the semiconductor wafer W placed on the lift pin 12 is carried out by a transfer robot outside the apparatus, and the semiconductor wafer W in the heat treatment apparatus 1 is completed. Of heat treatment.

In the first embodiment, the auxiliary lamp AHL having a U-shape is arranged at the four corners of the rectangular light source region formed by the halogen lamp HL, and the semiconductor wafer W-4 is individually adjusted by the auxiliary lamp AHL. The temperature in every corner of the corner. Accordingly, the temperature of the peripheral portion of the semiconductor wafer W including the four corners of the semiconductor wafer W can be appropriately adjusted during the preliminary heating by the halogen lamp HL, and the surface of the semiconductor wafer W during the preliminary heating can be adjusted. The internal temperature distribution is uniform. As a result, the in-plane temperature distribution of the surface of the semiconductor wafer W during flash heating can also be made uniform.

In addition, although the auxiliary lamp AHL can be configured, the segment lamp SHL can be considered, but the rated output of the auxiliary lamp AHL having a U-shape has to be lower than that of the rod-shaped segment lamp SHL. Therefore, in a configuration in which only the auxiliary lamp AHL is provided without the segment lamp SHL, there is a possibility that the four corners of the semiconductor wafer W cannot be sufficiently heated and a cold spot may occur in the four corners. Therefore, it is preferable to configure the segment lamp SHL in addition to the auxiliary lamp AHL to supplement the insufficient output of the U-shaped auxiliary lamp AHL.

    <Second Embodiment>    

Next, a second embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus 1 according to the second embodiment is substantially the same as that of the first embodiment. The processing sequence of the semiconductor wafer W in the heat treatment apparatus 1 of the second embodiment is also the same as that of the first embodiment. The second embodiment differs from the first embodiment in the shape of the auxiliary lamp AHL.

FIG. 10 is a schematic diagram showing the shape of the auxiliary lamp AHL according to the second embodiment. In the figure, the same elements as in the first embodiment are denoted by the same reference numerals as in FIG. 8. In the second embodiment, four auxiliary lamps AHL are provided. Then, as shown in FIG. 10, the auxiliary lamp AHL of the second embodiment has a U-shaped front end portion formed in a shape along the edge portion of the semiconductor wafer W held by the holding portion 7. Except for the shape of the auxiliary lamp AHL, the remaining structure of the second embodiment is the same as that of the first embodiment.

Even in the second embodiment, the auxiliary lamps AHL are arranged at the four corners of the rectangular light source region formed by the halogen lamp HL, and the four corners of the semiconductor wafer W are individually adjusted by the auxiliary lamps AHL. Temperature in every corner. Therefore, as in the first embodiment, the temperature of the peripheral portion of the semiconductor wafer W including the four corners of the semiconductor wafer W can be appropriately adjusted during the preliminary heating by the halogen lamp HL, and the preliminary heating can be performed during the preliminary heating. The in-plane temperature distribution of the semiconductor wafer W is uniform.

In addition, in the second embodiment, a part of the auxiliary lamp AHL is formed along the shape of the edge portion of the semiconductor wafer W held by the holding portion 7, so it is particularly suitable for adjusting the edge portion of the semiconductor wafer W. temperature.

    <Third Embodiment>    

Next, a third embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus 1 according to the third embodiment is approximately the same as that of the first embodiment. The processing procedure of the semiconductor wafer W in the heat treatment apparatus 1 of the third embodiment is also the same as that of the first embodiment. The third embodiment differs from the first embodiment in the shape of the auxiliary lamp AHL.

FIG. 11 is a schematic diagram showing the shape of the auxiliary lamp AHL according to the third embodiment. In the figure, the same elements as in the first embodiment are denoted by the same reference numerals as in FIG. 8. As shown in FIG. 11, the auxiliary lamp AHL of the third embodiment refers to a rod-shaped lamp having a rod shape. The external shape of the auxiliary lamp AHL of the third embodiment is the same as that of the segment lamp SHL and the halogen lamp HL. That is, the auxiliary lamp AHL according to the third embodiment is a glass tube having the same length and thickness as the segment lamp SHL and the halogen lamp HL, and an inert gas having a trace amount of halogen element introduced therein is sealed, and a linear filament is provided. However, in the auxiliary lamp AHL of the third embodiment, the filament is disposed at a position closer to one side than the center in the longitudinal direction.

In the third embodiment, four auxiliary lights AHL are provided. Each auxiliary lamp AHL is arranged such that the filament portion is located at the four corners of a rectangular light source region formed by the halogen lamp HL, that is, the filament portion is arranged to face the four corners of the semiconductor wafer W. Thereby, each auxiliary lamp AHL can illuminate any one of the four corners of the semiconductor wafer W by lighting.

Even in the third embodiment, the auxiliary lamps AHL are arranged at the four corners of the rectangular light source region formed by the halogen lamp HL, and the four corners of the semiconductor wafer W are individually adjusted by the auxiliary lamps AHL. Temperature in every corner. Therefore, as in the first embodiment, the temperature of the peripheral portion of the semiconductor wafer W including the four corners of the semiconductor wafer W can be appropriately adjusted during the preliminary heating by the halogen lamp HL, and the preliminary heating can be performed during the preliminary heating. The in-plane temperature distribution of the semiconductor wafer W is uniform.

    <Modifications>    

Although the embodiment of the present invention has been described above, the present invention can be modified in various ways other than the above as long as it does not deviate from the scope of its interest. For example, the shapes of the auxiliary lamps AHL arranged at the four corners of the rectangular light source region formed by the halogen lamp HL are not limited to the first to third embodiments, but may be formed into appropriate shapes. For example, the auxiliary lamp AHL may be a point light source lamp. The auxiliary lamp AHL of the third embodiment may be a rod-shaped lamp having a full length corresponding to the length of the filament.

In the embodiment described above, the flash heating unit 5 is provided with 30 flashes FL, but the flash FL is not limited to this, and the number of the flashes FL may be any number. The flash FL is not limited to a xenon flash, but may be a krypton flash lamp. In addition, the number of halogen lamps HL included in the halogen heating unit 4 is not limited to 40, and may be any number as long as a plurality of lattice patterns are arranged on the upper and lower layers.

The substrate to be processed by the heat treatment apparatus of the present invention is not limited to a semiconductor wafer, and may be a glass substrate used in a flat panel display such as a liquid crystal display device or a substrate for a solar cell. In addition, the technology of the present invention can also be applied to heat treatment of a high dielectric constant gate insulating film (High-k film), joining of metal to silicon, or crystallization of polycrystalline silicon.

In addition, the heat treatment technology of the present invention is not limited to a flash lamp annealing device, but can also be applied to heat sources other than flash lamps such as a monolithic lamp annealing device using a halogen lamp or a CVD (chemical vapor deposition) device. Of the device. In particular, the technology of the present invention can be preferably applied to a backside annealing device in which a halogen lamp is disposed below the chamber, and light is irradiated from the backside of the semiconductor wafer for heat treatment.

Claims (6)

    A heat treatment device for heating a substrate by irradiating the substrate with light, and comprising: a chamber for accommodating the substrate; a holding section for holding the substrate in the aforementioned chamber; a light irradiation section arranged in a rectangular light source region There are two layers of rod-shaped lamps in a grid pattern. The rectangular light source region includes a region facing the main surface of the substrate held by the holding portion. The auxiliary lamp is disposed in the rectangular light source region. Four corners.         The heat treatment apparatus according to claim 1, wherein the auxiliary lamp has a U-shape.         The heat treatment apparatus according to claim 2, wherein a part of the auxiliary lamp is formed in a shape along an edge portion of the substrate held by the holding portion.         The heat treatment apparatus according to claim 1, wherein the auxiliary lamp has a rod shape.         The heat treatment device according to claim 4, wherein the auxiliary lamp has the same length as the plurality of rod-shaped lamps, and includes a filament at a position closer to one side than the center in the longitudinal direction.         The heat treatment apparatus according to any one of claims 1 to 5, wherein the plurality of rod-shaped lamps include a lamp having filaments at both ends via a central portion in a longitudinal direction.