TW201814476A - Display device and display device substrate - Google Patents

Abstract

The display device of the present invention includes: a display functional layer; an array substrate for driving the display functional layer; a display device substrate including: a transparent substrate having a first surface facing the array substrate and a side opposite to the first surface; The second surface; the first sensing pattern has a structure in which a first black layer and a first conductive layer are sequentially laminated in a viewing direction from the second surface to the first surface, and is included on the second surface A plurality of first touch sensing wirings extending parallel to each other in an array in a first direction; a second sensing pattern having a second black layer and a second conductive layer sequentially laminated in the observation direction; A structure including a plurality of first touch sensing wirings and the array substrate, and a plurality of parallel ones extending in parallel with each other in a second direction orthogonal to the first direction in a plan view A second touch-sensing wiring; a first light-shielding conductive pattern formed of the same material as the first touch-sensing wiring described above, and arranged in the same position as the first touch-sensing wiring in a sectional view, And located in the first sensing pattern The second light-shielding conductive pattern is formed of the same material as the second touch-sensing wiring, and is located in the same position as the second touch-sensing wiring in a cross-section, and is located in the second The outside of the sensing pattern; a display portion facing the display functional layer; and a light-shielding frame portion surrounding the display portion while using a part of the first sensing pattern, the first light-shielding conductive pattern, and the first 2 is formed by a light-shielding conductive pattern; and the control unit detects a change in electrostatic capacitance between the first touch sensing wiring and the second touch sensing wiring to perform touch sensing.

Description

   Display device and display device substrate   

The present invention relates to a display device and a display device substrate capable of reducing external noise such as static electricity or internal noise generated from a control system that drives a display functional layer such as a liquid crystal layer, and more particularly, to a display having a touch sensing function. Device, and a display device substrate used in the display device.

In recent years, the resolution of a liquid crystal display device or a display device (organic electroluminescence display device, LED matrix display device) in which light-emitting elements are arranged in a matrix has been improved, and is becoming thinner. In addition, portable devices, such as smart phones and tablet computers, which are equipped with a display device having a screen size of 5 inches and 8 inches and can realize high image quality are commercially available. In particular, an organic electroluminescence display device (hereinafter referred to as an organic EL) can contribute to a reduction in thickness of such a portable device.

The organic EL display device includes an organic EL substrate provided with a white organic EL and a counter substrate provided with a color filter that enables color display and is disposed to face the organic EL substrate. In order to obtain higher image quality, for example, red light emitting LED chips, green light emitting LED chips, and blue light emitting LED chips are being placed in small light emitting units, and a plurality of light emitting units are arranged in a matrix on an array substrate. Of LED matrix display device. As the LED, a blue light emitting diode with high light emitting efficiency is known, and a white LED in which a green phosphor and a red phosphor are arranged on a blue LED chip is known.

The display function layer of the display device includes a liquid crystal layer, an organic EL layer (Organic Electroluminescence), an LED matrix layer derived from an LED chip (Light Emitting Diode), and an EMS (Electro Mechanical System) composed of electrical and mechanical elements. , Or MEMS (Micro-Electro-Mechanical System). MEMS includes optical components such as actuators, transducers, sensors, micro-mirrors, MEMS switches, and optical films, and optical interference modulators (IMOD: Interferometric Modulation).

Among such display devices, display devices having a touch sensing function that can be input using a pointer such as a finger are gradually spreading.

In addition, in order to enlarge the display screen of a portable device, the development of a "narrow frame technology" that reduces the width of a frame portion located around an effective display area (display screen) has been developed. In this frame portion, a peripheral circuit formed of a polycrystalline silicon TFT and an oxide semiconductor TFT (thin film transistor, hereinafter referred to as an active element) is generally formed.

However, in the display device, the above-mentioned narrow frame and the additional touch sensing function, etc., lead to an increase in electrical noise generation sources and various problems. For example, the electrostatic system of the hands and human body is likely to adversely affect a display device having a touch sensing function. There may be cases where the touch sensing malfunctions due to the hands and fingers touching the display device. In addition, the static electricity accumulated in the human body is conducted to the wiring of the control system related to the display, and the driver IC (Integrated Circuit) located at the frame portion may cause the display of the display device to fail.

Patent Document 1 discloses a structure in which a conductive film formed of a transparent conductive material has a shield function and also has a ground potential (grounded). In addition, corrosion resistance was also achieved by using the second conductive film in combination. However, since the transparent conductive material has a high resistance value, it is easy to form a capacitance derived from static electricity, and electric charges are easily conducted to wirings (especially common wirings) that drive liquid crystals, and touch sensing wirings provided in the touch panel. In addition, since the transparent conductive material has a high resistance value, its resistance value is not sufficient to shield high-frequency noise.

Patent Document 2 proposes a configuration including a first touch drive electrode provided on a first substrate, and a second touch drive electrode and a touch detection electrode provided on a second substrate. As a noise reduction technique, as shown in FIG. 8 of Patent Document 2, the second touch driving electrode 52 is arranged away from the peripheral circuit 80 that is a source of noise generation. However, merely increasing the distance from the peripheral circuit 80 to the second touch driving electrode 52 is not sufficient in terms of noise countermeasures. For example, in Patent Document 2, the influence of external noise such as static electricity generated from a finger, a human body, or the like is not considered. In addition, for display devices that require high reliability, such as display devices for automobiles, the withstand voltage specifications of electrostatic discharge are strict. In Patent Document 2, such an external noise countermeasure is not considered. Further, in Patent Document 2, a peripheral circuit including a switching element related to driving of an active element is provided in a frame portion located around a display area. Patent Document 2 discloses a technique of narrowing a frame of a display device. Active elements such as transistors formed in peripheral circuits are mostly thin film transistors having a channel layer formed of a polycrystalline silicon semiconductor.

Patent Document 3 relates to a liquid crystal display device in which a touch sensor and a display device are integrated. Patent Document 3 discloses a technique of using a touch screen in an array substrate using a by-pass tunnel or the like.

In Patent Document 3, not only signal lines (gate lines and source lines) and pixel electrodes connected to a polycrystalline silicon transistor, but also a sensing area and a driving-sensing ground area related to touch sensing and The bypass channels are arranged on the same array substrate. For this reason, in Patent Document 3, the array structure is extremely complicated, it is easy to cause an increase in parasitic capacitance, and the burden on the manufacturing steps of the array substrate is large.

Patent Document 4 relates to an in-plane switching (IPS) liquid crystal display device, and discloses a technology in which touch driving electrodes and electrode pairs for touch sensing are provided in the same plane. In Patent Literature 3 and Patent Literature 4, touch sensing wirings (hereinafter, touch wirings) are arranged on an array substrate (a surface on which an active element is formed). In this structure, a touch wiring is arranged near the TFT wiring that transmits the image signal and the gate signal to the active device, and there is a problem that noise caused by the image signal is easily transmitted to the touch wiring.

Patent Document 5 discloses a structure including a gate line driver that outputs a selection signal that switches a specific gate line to a selected or non-selected state. Each gate line driving unit is formed in a display area, and can perform various displays with different driving frequencies in accordance with a control signal, for example. In this display area, a still picture can be partially displayed, or the driving frequency can be reduced to reduce power consumption. For example, when a still picture is displayed and an image is displayed at a low drive frequency, the gate line is selected in a period of a part of a plurality of frames, and the gate line is selected in a period of another frame. The way in which the gate line becomes a non-selected state, the selected state of the gate line is switched, thereby reducing power consumption and improving image quality. From such a viewpoint, the technology described in Patent Document 5 is excellent. However, as disclosed in FIGS. 6A to 7 of Patent Document 5, etc., in addition to the active element TFT-PIX that drives the pixel (PIX), TFT-D, TFT-E, TFT-F, etc. must be added. Switch element. A wiring 13N is further provided for these added switching elements.

Patent Document 6 discloses that a copper wiring containing a copper-containing layer is held by a conductive metal oxide containing indium oxide and tin oxide as a touch sensing wiring. However, countermeasures against noise caused by pointers such as fingers (including misoperation of touch sensing) and noise generated by peripheral circuits as described above are not considered.

    Prior art literature         Patent literature    

Patent Document 1 Japanese Patent Application Laid-Open No. 2011-95451

Patent Document 2 JP 2014-53000

Patent Document 3 Japanese Patent No. 5746736

Patent Document 4 Japanese Patent No. 4584342

Patent Document 5 International Publication 2014/142183

Patent Document 6 Japanese Patent No. 5807726

As described above, in the display device, the structure of the array substrate is complicated due to the addition of the touch sensing function, the narrowing of the bezel, the reduction in power consumption, and the addition of switching elements for improving image quality. As the structure of the array substrate becomes more complicated, noise sources increase, and it becomes difficult to ensure the S / N ratio in touch sensing.

The present invention is an invention completed in view of the above-mentioned problems, and provides a display device and a display device substrate having a touch sensing function that achieve high touch sensing accuracy.

A display device according to a first aspect of the present invention includes: a display functional layer; an array substrate driving the display functional layer; a display device substrate including a transparent substrate having a first surface facing the array substrate and the first surface The surface is the second surface on the opposite side; the first sensing pattern has a structure in which a first black layer and a first conductive layer are sequentially laminated in a viewing direction from the second surface to the first surface, and is included in A plurality of first touch sensing wirings extending in parallel with each other so as to be aligned in the first direction on the second surface; the second sensing pattern has a second black layer and a second black layer sequentially laminated in the observation direction; The structure of the second conductive layer is located between the plurality of first touch sensing wirings and the array substrate, and is arranged parallel to each other in a second direction orthogonal to the first direction in a plan view. The plurality of second touch sensing wirings extending from the ground; the first light-shielding conductive pattern is formed of the same material as the aforementioned first touch sensing wiring, and is arranged on the cross section in the same manner as the first touch sensing The same position of wiring 1 the outside of the sensing pattern; the second light-shielding conductive pattern is formed of the same material as the aforementioned second touch sensing wiring, and is arranged at the same position as the aforementioned second touch sensing wiring in a cross-section, and The display portion is positioned outside the second sensing pattern; the display portion is opposed to the display functional layer; and the light-shielding frame portion surrounds the display portion while using a part of the first sensing pattern and the first light-shielding conductive pattern. And the second light-shielding conductive pattern; and a control unit that detects a change in electrostatic capacitance between the first touch sensing wiring and the second touch sensing wiring to perform touch sensing.

In the display device according to the first aspect of the present invention, the first touch sensing wiring and the second touch sensing wiring may be formed on the second surface, and the first touch sensing wiring An insulating layer is provided between the first touch sensing wiring and the second touch sensing wiring, and the first touch sensing wiring and the second touch sensing wiring are electrically insulated from each other.

In the display device according to the first aspect of the present invention, the first touch sensing wiring system may be formed on the second surface, and the second touch sensing wiring system may be formed on the first surface.

In the display device according to the first aspect of the present invention, the first touch sensing wiring and the second touch sensing wiring may be sequentially formed on the first surface and in the observation direction. An insulating layer is provided between the first touch sensing wiring and the second touch sensing wiring, and the first touch sensing wiring and the second touch sensing wiring are electrically insulated from each other.

The display device according to the first aspect of the present invention may include a frame surrounding the array substrate and the display device substrate, and the first light-shielding conductive pattern is grounded to the frame.

In the display device according to the first aspect of the present invention, the second light-shielding conductive pattern may include a plurality of light-shielding conductive portions divided by a slit.

In the display device according to the first aspect of the present invention, the array substrate may include an active element having a channel layer made of an oxide semiconductor in contact with the gate insulating layer and driving the display functional layer.

In the display device according to the first aspect of the present invention, the oxide semiconductor may include one or more metal oxides selected from the group consisting of gallium, indium, zinc, tin, aluminum, germanium, and cerium. And metal oxides containing at least any one of antimony and bismuth.

In the display device according to the first aspect of the present invention, the gate insulating layer may be formed of a composite oxide containing cerium oxide.

In the display device according to the first aspect of the present invention, at least the gate wiring may have a three-layer structure in which the copper alloy layer is held by the conductive metal oxide layer among the plurality of wirings electrically connected to the active device.

In the display device according to the first aspect of the present invention, the array substrate may include an upper electrode and a lower electrode that support the display function layer, and the display function layer is a light-emitting diode layer, and the upper and lower electrodes are applied to the display substrate. The driving voltage between the electrodes emits light.

In the display device according to the first aspect of the present invention, the array substrate may include an upper electrode and a lower electrode that support the display function layer, and the display function layer is an organic electroluminescence layer. The driving voltage between the lower electrodes emits light.

In the display device according to the first aspect of the present invention, at least one of the upper electrode and the lower electrode may have a structure in which a silver alloy layer is held by a conductive metal oxide layer.

In the display device according to the first aspect of the present invention, the display function layer type liquid crystal layer may be used, the array substrate includes a common electrode and a pixel electrode that support the liquid crystal layer, and the liquid crystal layer uses the common electrode and the pixel electrode. The potential difference between the drives.

In the display device according to the first aspect of the present invention, the common electrode may be disposed closer to the display device substrate than the pixel electrode in a cross-sectional view.

A display device substrate according to a second aspect of the present invention includes a transparent substrate having a first surface and a second surface opposite to the first surface; and a first sensing pattern formed on the first surface and the first surface. Either the second surface has a structure in which a first black layer and a first conductive layer are sequentially laminated in a viewing direction from the second surface to the first surface, and are also included on the second surface so that A plurality of first touch sensing wirings extending in parallel to each other in a manner arranged in the first direction; and a second sensing pattern is formed on any of the first surface and the second surface, and has a view direction A structure in which a second black layer and a second conductive layer are sequentially stacked, and a plurality of second touch sensors are extended in parallel to each other so as to be arranged in a second direction orthogonal to the first direction in a plan view. Wiring; the first light-shielding conductive pattern is formed of the same material as the first touch-sensing wiring, and is arranged at the same position as the first touch-sensing wiring in a sectional view, and is located in the first sensing pattern; Outside; the second light-shielding conductive pattern is the same as the second touch-sensing wiring It is formed of a material, and is disposed in the same position as the second touch sensing wiring in a cross-section, and is located outside the second sensing pattern; and a light-shielding frame portion uses a part of the first sensing pattern, the aforementioned The first light-shielding conductive pattern and the second light-shielding conductive pattern are configured.

In the display device according to the second aspect of the present invention, the transparent substrate may have short sides and long sides in a plan view, and the first light-shielding conductive pattern is provided in parallel with the long sides.

In the display device according to the second aspect of the present invention, the second light-shielding conductive pattern may have a plurality of slits parallel to the first touch-sensing wiring, and the plurality of first touches may be formed in a plan view. An overlapping portion where the sensing wiring overlaps the plurality of slits, and the overlapping portion constitutes the frame portion.

In the display device according to the second aspect of the present invention, the first conductive layer and the second conductive layer may have a three-layer structure in which at least a copper alloy layer is held by a conductive metal oxide layer.

The display device according to the second aspect of the present invention may include a plurality of pixels separated by the plurality of first touch sensing wirings and the plurality of second touch sensing wirings in a plan view. The plurality of pixels are provided with a color filter.

According to aspects of the present invention, it is possible to provide a display device and a display device substrate capable of reducing internal noise generated by a peripheral circuit or external noise from the outside of a display device and having a function of realizing high-precision touch sensing.

1‧‧‧1st touch sensing wiring

2‧‧‧ 2nd touch sensing wiring

2A‧‧‧Sense wiring

2B‧‧‧Pull out the wiring

3‧‧‧ Overlap

9‧‧‧ 2nd gate wiring

10‧‧‧The first gate wiring

11‧‧‧The first insulation layer

11H, 12H, 93, CH‧‧‧ contact hole

12‧‧‧Second insulation layer

13‧‧‧3rd insulating layer

14‧‧‧ 4th insulation layer

15‧‧‧ the first conductive layer

16‧‧‧ the first black layer

17, 50‧‧‧ common electrode

20‧‧‧ metal layer

21, 97‧‧‧ the first conductive metal oxide layer

22, 98‧‧‧ 2nd conductive metal oxide layer

24‧‧‧Source electrode

25, 95‧‧‧Gate electrode

26, 56‧‧‧ Drain electrode

27, 58‧‧‧ channel floor

28, 68‧‧‧active components

28a‧‧‧The first active element

28b‧‧‧Second Active Element

29, 59, 88‧‧‧ pixel electrode (lower electrode)

29s‧‧‧through hole

30‧‧‧Common wiring

31‧‧‧The first source wiring

32‧‧‧Second source wiring

35, 75‧‧‧ 2nd conductive layer

36, 76‧‧‧ 2nd black layer

40, 41, 42, 44‧‧‧ transparent substrate

45‧‧‧ substrate

60‧‧‧Color Filter

80‧‧‧ Peripheral circuit

87‧‧‧upper electrode

89‧‧‧Reflective layer

91‧‧‧ Hole injection layer

92‧‧‧Light-emitting layer

94‧‧‧ embankment

96‧‧‧ flattening layer

100, 350, 550‧‧‧ Opposite substrates (display device substrates)

101‧‧‧Anisotropic conductive film

102‧‧‧ conductive particles

103‧‧‧ spacer

104‧‧‧Sealing layer

105‧‧‧ 2nd transparent resin layer

107‧‧‧connection terminal

108‧‧‧The first transparent resin layer

109‧‧‧Encapsulation layer

110‧‧‧Display

120‧‧‧Control Department

121‧‧‧Image signal control section (first control section)

122‧‧‧Touch sensing control section (second control section)

123‧‧‧System control unit (third control unit)

200, 600‧‧‧ array substrate

200F, 600F‧‧‧Frame part

290‧‧‧light-emitting area

300, 506‧‧‧ LCD layer

B‧‧‧ blue colored layer

F‧‧‧Frame section

G‧‧‧Green colored layer

I‧‧‧ insulation

K‧‧‧Frame

P‧‧‧ Observer

R‧‧‧red color layer

MF‧‧‧Part 1

MS‧‧‧Part 2

OB‧‧‧ Observation direction

PX‧‧‧pixel

F21‧‧‧The first shading conductive pattern

F22‧‧‧The second shading conductive pattern

FPC‧‧‧ Flexible Printed Circuit Board

PT1‧‧‧The first sensing pattern

PT2‧‧‧Second sensing pattern

TM1‧‧‧The first terminal

TM2‧‧‧ 2nd terminal

F22A‧‧‧The first light-shielding conductive part (light-shielding conductive part)

F22B‧‧‧ 2nd light-shielding conductive part (light-shielding conductive part)

F21L‧‧‧Long side

F21S‧‧‧Short side

S, CS‧‧‧ slit

H1, SW‧‧‧Width

P1, PS‧‧‧ configuration spacing

C1, C2, C3‧‧‧ electrostatic capacitors

DSP1, DSP2, DSP3‧‧‧ display device

FIG. 1 is a block diagram showing a control section (a video signal control section, a system control section, and a touch sensing control section) and a display section of a display device according to a first embodiment of the present invention.

Fig. 2 is a sectional view partially showing a display device according to a first embodiment of the present invention.

FIG. 3 is a view showing a counter substrate provided in the display device according to the first embodiment of the present invention, and a plan view of the display device viewed from an observer side.

FIG. 4 is a diagram showing a counter substrate provided in the display device according to the first embodiment of the present invention, and shows a first sensing pattern provided on the counter substrate and having a plurality of first touch sensing wirings, and a first sensor pattern A plan view of the first light-shielding conductive pattern outside the 1 sensing pattern.

FIG. 5 is a diagram showing a counter substrate provided in the display device according to the first embodiment of the present invention, and shows a second sensing pattern having a plurality of second touch sensing wirings provided on the counter substrate, and a second sensor pattern A plan view of the second light-shielding conductive pattern outside the 2 sensing pattern.

FIG. 6 is a plan view partially showing a frame portion of the counter substrate provided in the display device according to the first embodiment of the present invention, and explaining an overlapping portion where the slit of the second light-shielding conductive pattern and the first touch sensing wiring overlap The obtained light-shielding figure.

Fig. 7 is a view partially showing a liquid crystal layer and a frame portion of a counter substrate provided in the display device according to the first embodiment of the present invention, and is a cross-sectional view taken along line A-A 'in Fig. 3.

FIG. 8 is a diagram showing the first touch sensing wiring, the insulating layer, and the second touch sensing wiring provided on the counter substrate according to the first embodiment of the present invention, and the symbol W1 in FIG. An enlarged sectional view of the portion shown.

Fig. 9 is a plan view partially showing an array substrate provided in the display device according to the first embodiment of the present invention.

Fig. 10 is a sectional view partially showing an array substrate provided in the display device according to the first embodiment of the present invention, and is a sectional view taken along the line C-C 'shown in Fig. 9.

FIG. 11 is a circuit diagram partially showing a display device according to a first embodiment of the present invention, and shows an explanation of a state of a liquid crystal driving voltage in each pixel when a liquid crystal display device is driven by column inversion driving. Illustration.

FIG. 12 is a circuit diagram partially showing a display device according to a first embodiment of the present invention, and is an explanatory diagram showing a state of a liquid crystal driving voltage in each pixel when a liquid crystal display device is driven by dot inversion driving.

Fig. 13 is a sectional view partially showing a display device according to a second embodiment of the present invention.

FIG. 14 is a cross-sectional view partially showing a liquid crystal layer and a frame portion of a counter substrate included in a display device according to a second embodiment of the present invention.

FIG. 15 is a diagram showing a second touch sensing wiring provided on a counter substrate according to a second embodiment of the present invention, and an enlarged cross-sectional view of a portion indicated by a symbol W2 in FIG. 14.

Fig. 16 is a view showing a counter substrate provided in a display device according to a second embodiment of the present invention, and a plan view of the display device viewed from an observer side.

Fig. 17 is a sectional view partially showing a display device according to a third embodiment of the present invention.

Fig. 18 is a sectional view partially showing a frame portion of a counter substrate provided in a display device according to a third embodiment of the present invention.

FIG. 19 is a view showing a counter substrate provided in a display device according to a third embodiment of the present invention, and a plan view of the display device viewed from an observer side.

Fig. 20 is a sectional view partially showing an array substrate according to a third embodiment of the present invention.

FIG. 21 is a diagram partially showing a pixel electrode constituting an array substrate according to a third embodiment of the present invention, and an enlarged sectional view of a portion indicated by a symbol W3 in FIG. 20 is shown.

Fig. 22 is a sectional view partially showing a gate electrode constituting an array substrate according to a third embodiment of the present invention.

    [Form for Implementing the Invention]    

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

In the following description, the same or substantially the same functions and constituent elements are given the same element symbols, and the description thereof is omitted or simplified, or the description will be made only when necessary. In each drawing, each component is drawn to a size that is recognizable graphically. Therefore, the size and ratio of each component are appropriately made different from the real thing. In addition, elements that are difficult to illustrate, such as a structure of a plurality of layers forming a channel layer of a semiconductor, a structure of a plurality of layers forming a conductive layer, etc. are omitted as necessary.

In each of the embodiments described below, feature portions will be described. For example, for components that are not different from those of the display device of the present embodiment, the constituent elements used in a normal display device will not be described.

In the following description, wirings, electrodes, and signals related to touch sensing may be simply referred to as touch drive wirings, touch detection wirings, touch wirings, touch electrodes, and touch signals. In addition, the first touch sensing wiring and the second touch sensing wiring may be simply referred to as a touch sensing wiring. The voltage applied to the touch sensing wiring for touch sensing driving is referred to as a touch driving voltage.

The first black layer and the second black layer may be simply referred to as a black layer, and the first conductive layer and the second conductive layer may be simply referred to as a conductive layer.

In an embodiment using a liquid crystal layer as a display functional layer, illustrations of optical functional films such as a backlight unit, a polarizing plate, and alignment films are omitted. The voltage applied between the common electrode and the pixel electrode in order to drive the liquid crystal layer may be referred to as a liquid crystal driving voltage. The liquid layer driving voltage may be referred to as a pixel driving voltage.

In an embodiment using a light-emitting layer (organic EL, LED) as a display functional layer, an upper electrode and a lower electrode (hereinafter, the lower electrode is referred to as a pixel electrode or The voltage between the reflective electrodes) is called the pixel driving voltage. The driving of the light emitting layer may be simply referred to as pixel driving.

    (First Embodiment)         (Functional structure of display device DSP1)    

Hereinafter, a display device DSP1 according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 12.

FIG. 1 is a block diagram showing a display device DSP1 according to the first embodiment of the present invention. As shown in FIG. 1, the display device DSP1 of the present embodiment includes a display unit 110 and a control unit 120 for controlling the display unit 110 and the touch sensing function.

The control unit 120 has a known structure, and includes a video signal control unit 121 (first control unit), a touch sensing control unit 122 (second control unit), and a system control unit 123 (third control unit).

The image signal control unit 121 sets a common electrode 17 (to be described later) provided on the array substrate 200 to a constant potential, and sends a signal to the gate wirings 9 and 10 (to be described later, scan lines) and the source wiring provided on the array substrate 200. 31, 32 (to be described later, signal lines). The image signal control unit 121 generates a fringe electric field on the array substrate 200 by applying a liquid crystal driving voltage for display between the common electrode 17 and the pixel electrode 29 (to be described later), and the liquid crystal molecules rotate along the fringe electric field. drive. Thereby, an image is displayed on the array substrate 200. Each of the plurality of pixel electrodes 29 passes through the source wirings 31 and 32 (signal lines), and individually applies, for example, an image signal having a rectangular wave. The rectangular wave may be a positive or negative DC rectangular wave or an AC rectangular wave. The video signal control unit 121 sends such a video signal to the source wiring.

The touch sensing control unit 122 applies a touch sensing driving voltage to a second touch sensing wiring 2 (to be described later), and detects a generation between the first touch sensing wiring 1 and the second touch sensing wiring 2. The change in electrostatic capacitance is touch sensed.

The system control unit 123 controls the image signal control unit 121 and the touch sensing control unit 122, and can perform liquid crystal driving and detection of changes in electrostatic capacitance alternately, that is, in a time-sharing manner.

In addition, the system control unit 123 may have a function of making the frequency of the liquid crystal driving and the touch sensing driving different from each other to perform the above-mentioned driving, or may have a function of making the driving voltage of the liquid crystal driving and the touch sensing driving different from each other to perform the above-mentioned Driven features. In the system control unit 123 having such a function, for example, the frequency of noise from the external environment accidentally obtained by the display device DSP1 is detected, and a touch sensing driving frequency different from the noise frequency is selected. This can reduce the impact of noise. In addition, the system control unit 123 can also select a touch sensing driving frequency that matches the scanning speed of a pointer such as a finger or a pen.

The display device DSP1 provided with the control unit 120 is a touch-sensing function integrated display device having both a touch-sensing function and an image display function. The display device DSP1 is a touch sensing technology using an electrostatic capacitance method using two wiring groups arranged through an insulating layer, that is, a plurality of first touch sensing wirings 1 and a plurality of second touch sensing wirings 2. . For example, when an indicator such as a finger contacts or approaches the opposing substrate 100 (to be described later), a change in electrostatic capacitance generated at an intersection of the first touch sensing wiring 1 and the second touch sensing wiring 2 is detected, and Position of pointers such as fingers. In addition, a symbol K in the first figure indicates a housing K of the display device DSP1 of this embodiment. The array substrate 200 and the counter substrate 100 are surrounded by a frame K, and the array substrate 200 and the counter substrate 100 are integrated.

    (Structure of Display Device DSP1)    

Fig. 2 is a sectional view partially showing a display device DSP1 according to the first embodiment of the present invention.

The display device DSP1 of this embodiment includes a display device substrate of an embodiment described later. In addition, the “plan view” described below means a plane viewed from a direction in which an observer views the display surface (plane of the display device substrate) of the display device DSP1. The shape of the display portion of the display device according to the embodiment of the present invention, the shape of the pixel opening portion of a predetermined pixel, and the number of pixels constituting the display device are not limited.

In the embodiment detailed below, the direction along the short side of the display section is defined as the X direction (first direction), and the direction along the long side of the display section is defined as the Y direction (second direction). The display device will be described by specifying the thickness direction of the transparent substrate as the Z direction.

Further, in the following embodiments, the X direction and the Y direction defined above may be exchanged, that is, the X direction is defined as the second direction and the Y direction is defined as the first direction to constitute a display device.

As shown in FIG. 2, the display device DSP1 includes a counter substrate 100 (display device substrate), an array substrate 200 bonded to face the counter substrate 100, and an opposing substrate 100 and an array substrate 200 held by the counter substrate 100. Between the liquid crystal layer 300. In the display device DSP1 shown in FIG. 2, an optical film having various optical functions, a cover glass that protects the counter substrate 100, and the like are omitted.

    (Structure of the counter substrate 100)    

As shown in Fig. 2, the counter substrate 100 includes a transparent substrate 40 (first transparent substrate) having a first surface MF and a second surface MS opposite to the first surface MF. The first surface MF is a surface facing the array substrate 200. The second surface MS is a surface facing the observer.

The substrate that can be used for the transparent substrate 40 may be any substrate that is transparent in the visible light region. A glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, a plastic substrate, or the like can be used.

    (Sensing pattern and shading conductive pattern)    

FIG. 3 is a diagram showing the counter substrate 100 included in the display device DSP1 according to the first embodiment of the present invention, and a plan view of the display device DSP1 is viewed from the viewer's side P. That is, a plan view of the second surface MS of the transparent substrate 40 is viewed.

Above the second surface MS of the transparent substrate 40, a first sensing pattern PT1 including a plurality of first touch sensing wirings 1 is provided, and a second sensing pattern including a plurality of second touch sensing wirings 2 is provided. PT2, the first light-shielding conductive pattern F21, and the second light-shielding conductive pattern F22.

Between the plurality of first touch sensing wirings 1 and the plurality of second touch sensing wirings 2, an insulating layer I (touch wiring insulation layer) is provided, and the first touch sensing wirings 1 and the second touch The sensing lines 2 are electrically insulated from each other by an insulating layer I.

The first light-shielding conductive pattern F21 is formed of the same material as the first touch-sensing wiring 1 and is located at the same position as the first touch-sensing wiring 1 in a cross-section, and is located outside the first sensing pattern PT1. .

The second light-shielding conductive pattern F22 is formed of the same material as the second touch-sensing wiring 2 and is disposed at the same position as the second touch-sensing wiring 2 in a cross-section, and is located outside the second sensing pattern PT2. .

The first light-shielding conductive pattern F21 and the second light-shielding conductive pattern F22 constitute a light-shielding frame portion F, and the frame portion F surrounds the display portion 110 facing the liquid crystal layer (display function layer).

As described later, the first touch-sensing wiring 1 and the second touch-sensing wiring 2 have a structure in which a black layer and a conductive layer are laminated. Therefore, the layer structure of the first light-shielding conductive pattern F21 and the first touch sensing The layer structure of the wiring 1 is the same, and the layer structure of the second light-shielding conductive pattern F22 is the same as the layer structure of the second touch sensing wiring 2.

Specifically, the first light-shielding conductive pattern F21 and the first sensing pattern PT1 are simultaneously patterned and formed in the same step. The second light-shielding conductive pattern F22 and the second sensing pattern PT2 are simultaneously patterned and formed in the same step.

FIG. 4 is a diagram showing a counter substrate 100 included in the display device DSP1 according to the first embodiment of the present invention, and shows a first sensing pattern provided on the counter substrate 100 and having a plurality of first touch sensing wirings 1. A plan view of PT1 and the first light-shielding conductive pattern F21 located outside the first sensing pattern PT1.

In FIG. 4, the second light-shielding conductive pattern F22 and the second sensing pattern PT2 shown in FIG. 3 are omitted.

As shown in FIGS. 2 and 4, the plurality of first touch sensing wirings 1 are located above the second surface MS, are arranged in the X direction, and extend in parallel in the Y direction. A first terminal TM1 is provided at an end of the first touch sensing wiring 1 in the Y direction. The plurality of first touch sensing wirings 1 form a first sensing pattern PT1.

On the outside of the first sensing pattern PT1, a first light-shielding conductive pattern F21 formed in a U shape so as to surround the first sensing pattern PT1 is disposed. Specifically, the long-side portions F21L of the first light-shielding conductive pattern F21 are located on both sides of the first sensing pattern PT1 in the X direction. The long-side portion F21L extends in the Y direction. That is, the long side portion F21L of the first light-shielding conductive pattern F21 among the long and short sides of the transparent substrate 40 is provided in parallel with the long side of the transparent substrate 40. The short-side portion F21S of the first light-shielding conductive pattern F21 is located at an end portion (the left side in the fourth figure) of the first sensing pattern PT1 in the Y direction. The short side portion F21S extends in the X direction. The first light-shielding conductive pattern F21 is grounded to the frame K.

FIG. 5 is a diagram showing a counter substrate 100 included in the display device DSP1 according to the first embodiment of the present invention, and shows a second sensing pattern provided on the counter substrate 100 and having a plurality of second touch sensing wirings 2. A plan view of PT2 and the second light-shielding conductive pattern F22 located outside the second sensing pattern PT2. Each of the second light-shielding conductive patterns F22 is electrically independent.

In FIG. 5, the first light-shielding conductive pattern F21 and the first sensing pattern PT1 shown in FIG. 3 are omitted.

As shown in FIGS. 2 and 5, the plurality of second touch-sensing wirings 2 are located between the plurality of first touch-sensing wirings 1 and the array substrate 200. In this embodiment, the second touch-sensing wirings 2 are located on the second surface MS. Up. The second touch sensing wiring 2 includes a sensing wiring 2A and a pull-out wiring 2B. The sense wirings 2A are arranged in the Y direction and extend in the X direction in parallel with each other. The sense wiring 2A is connected to the pull-out wiring 2B on the outside (the frame portion F) of the display section 110. The pull-out wirings 2B are arranged in the X direction and extend in the Y direction in parallel with each other. A second terminal TM2 is provided at an end portion of the pull-out wiring 2B in the Y direction. The plurality of second touch sensing wirings 2 form a second sensing pattern PT2.

The second light-shielding conductive pattern F22 has a plurality of first light-shielding conductive portions F22A (light-shielding conductive portions) located on the left side of the counter substrate 100 (front end of the substrate in the Y direction) in FIG. 5 and on the right side of the opposite substrate 100. (The base end of the substrate in the Y direction) a plurality of second light-shielding conductive portions F22B (light-shielding conductive portions). In addition, the first light-shielding conductive portion F22A adjacent to each other and the second light-shielding conductive portion F22B adjacent to each other are divided and separated by a slit S. The plurality of slits S partitioning the second light-shielding conductive portion F22B are parallel to the first touch sensing wiring 1. In addition, among the plurality of first light-shielding conductive portions F22A, any one of the light-shielding conductive portions is divided by a cross-shaped slit CS. In other words, the second light-shielding conductive pattern F22 is divided into a plurality of light-shielding conductive portions (a plurality of patterns) by a slit pattern, and the second light-shielding conductive pattern F22 has a plurality of large and small light-shielding conductive portions.

In this manner, the second light-shielding conductive pattern F22 is preferably divided into a plurality of patterns by a slit that separates the second light-shielding conductive pattern F22. The types of the light-shielding conductive patterns and the size of the light-shielding conductive patterns divided in this manner may be plural.

By forming the second light-shielding conductive pattern F22 so as to overlap the first light-shielding conductive pattern F21 in a plan view, an electrically suspected capacitor can be provided between the second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21. By forming this capacitor, it is difficult to transmit low-frequency noise (for example, noise generated by a driver circuit or the like) in the thickness direction of the second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21. Such a capacitor preferably has a plurality of characteristics. In other words, it is preferable that the second light-shielding conductive pattern F22 includes light-shielding conductive portions having different sizes. The shape of the light-shielding conductive portion can be arbitrarily set in a plan view. In addition, high-frequency noise is dissipated to the ground through the grounded first light-shielding conductive pattern F21, and it is difficult to pass through the conductive pattern.

The effects obtained by the second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21 described above cannot be obtained sufficiently from a transparent conductive film pattern such as ITO having a high resistance value. As a part of the second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21, a thin film made of copper, silver, a copper alloy, or a silver alloy is preferably used. The second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21 can be formed at the same time in the step of forming the first touch sensing wiring 1 and the second touch sensing wiring 2, so that the first touch sensing wiring 1 and the second touch sensing wiring 2 can be formed without adding manufacturing steps. 2 The light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21. By using the second light-shielding conductive pattern F22 and the first light-shielding conductive pattern F21 in this embodiment, a display device having a shielding effect against various noises including electrostatic noise can be realized.

FIG. 6 is a plan view partially showing the frame portion F of the counter substrate 100 included in the display device DSP1 according to the first embodiment of the present invention, and illustrates the slit S of the second light-shielding conductive pattern F22 and the first touch sensing A light-shielding figure obtained by overlapping portions of the wirings 1.

FIG. 6 (a) is a plan view partially showing the first terminal TM1 shown in FIG. 4 and a part (symbol 1 ') of the first touch sensing wiring 1 extending from the first terminal TM1 toward the display section 110. . The first terminal TM1 is a portion that removes a first black layer 16 described later to expose an exposed portion of the first conductive layer 15 and functions as a Pad (terminal portion).

Fig. 6 (b) is a plan view partially showing the second light-shielding conductive portion F22B shown in Fig. 5. The second light-shielding conductive portions F22B (second light-shielding conductive pattern F22) adjacent to each other are separated by a slit S. In FIGS. 6 (a) and 6 (b), the width WS of the slit S is the same as the width H1 of the first touch sensing wiring 1. The arrangement pitch PS of the X direction in which the plurality of slits S are arranged is the same as the arrangement pitch P1 of the X direction in which the first touch sensing wiring 1 is arranged.

Therefore, as shown in FIG. 6 (c), if a part of the first touch sensing wiring 1 shown in FIG. 6 (a) and the slit S shown in FIG. 6 (b) are overlapped, Then, the position of the first touch sensing wiring 1 coincides with the position of the slit S, and a plurality of overlapping portions 3 are formed. This overlapping portion 3 constitutes a light-shielding frame portion F.

In addition, in the overall structure of the counter substrate 100, as shown in FIG. 3, FIG. 4, and FIG. 6, a part of the first touch sensing wiring 1 (the overlapping portion 3) and the first light-shielding conductive pattern are used. F21 (long-side portion F2 1L and short-side portion F21S) and the second light-shielding conductive portion F22B (second light-shielding conductive pattern F22) constitute a frame portion F.

Here, the plurality of second light-shielding conductive portions F22B are finely divided so as not to generate large parasitic capacitance. If the width WS of the slit S is set to be shorter than the wavelength of the average frequency of the noise generated by the peripheral circuit 80 shown in FIG. 7, it becomes difficult to be affected by the noise.

As described above, the overlapping portion 3 is formed by the plurality of second light-shielding conductive portions F22B constituting the second light-shielding conductive pattern F22 and a part of the plurality of first touch sensing wirings 1. The overlapping portion 3 can prevent generation of noise leakage and light leakage from a backlight unit (not shown).

It is desirable that the resistance values of the first light-shielding conductive pattern F21 and the second light-shielding conductive pattern F22 be low. A part of the layer structure of each of the first light-shielding conductive pattern F21 or the second light-shielding conductive pattern F22 is preferably a metal having high conductivity. Although a slit may be formed in the first light-shielding conductive pattern F21, it is desirable to ground the first light-shielding conductive pattern F21 in order to reduce the influence of noise caused by static electricity. For example, it is desirable to ground the first light-shielding conductive pattern F21 to the frame K according to the embodiment.

In using the display device DSP1, a high potential such as static electricity from the outside of the display device DSP1 is applied to the display device DSP1, or static electricity is applied from a finger or the like when the display device DSP1 is held by a hand, finger, or the like In the case of the display device DSP1. Even in such a case, the effect of static electricity can be reduced by grounding the first light-shielding conductive pattern F21. As a structure in which the first light-shielding conductive pattern F21 is grounded to a member constituting the display device DSP1, in many cases, a structure in which the first light-shielding conductive pattern F21 is connected to the frame K of the display device DSP1 may be used. The ground potential used for display such as driving is used as the ground potential.

FIG. 7 is a view partially showing the liquid crystal layer 300 and the frame portion F of the counter substrate 100 included in the display device DSP1 according to the first embodiment of the present invention, and is a cross-sectional view taken along the line AA ′ in FIG. 3. .

As shown in FIG. 7, a peripheral circuit 80 related to liquid crystal driving is formed on the array substrate 200. The peripheral circuit 80 is located under the frame portion F shown in FIG. 6. The peripheral circuit 80 is, for example, a surface of a frame portion 200F (a region coincident with the frame portion F in plan view) of the array substrate 200 in which TFTs, capacitors, and resistance elements that drive the active elements of the array substrate 200 are provided. The electrical noise generated by the peripheral circuit 80 is cut by the frame portion F, which can reduce the influence of the noise on the first touch sensing wiring 1 of the touch detection electrode. A cell gap (thickness) of the liquid crystal layer 300 is controlled by a spacer 103. A sealing layer 104 is provided around the liquid crystal layer 300. The liquid crystal layer 300 is surrounded by the counter substrate 100, the array substrate 200, and the sealing layer 104.

The plurality of first terminals TM1 and the plurality of second terminals TM2 shown in FIGS. 3 to 6 are connected to the touch sensing control unit 122. For example, as shown in FIG. 7, the first terminal TM1 of the first touch sensing wiring 1 is electrically connected to a terminal provided on the flexible printed circuit board FPC through the anisotropic conductive film 101. Instead of the anisotropic conductive film 101, a conductor such as a fine metal ball or a resin ball covered with a metal film may be used. The touch-sensing control unit 122 is electrically connected to the first touch-sensing wiring 1 and the second touch-sensing wiring 2 through the flexible printed circuit board FPC and the first terminal TM1 and the second terminal TM2.

Each of the plurality of first touch sensing wirings 1 and each of the plurality of second touch sensing wirings 2 are electrically independent. The first touch sensing wiring 1 and the sensing wiring 2A are orthogonal in a plan view viewed from the observer side P. The area separated by the plurality of first touch sensing wirings 1 and the plurality of sensing wirings 2A is a pixel PX. The plurality of pixels PX are arranged in a matrix in the display unit 110. The shape of the opening in the pixel PX may be a square pattern, a rectangular pattern, a parallelogram pattern, or the like. In addition, the arrangement of the openings in the pixel PX may be an arrangement in which a moare measure is taken or an indented arrangement.

The plurality of first terminals TM1 and the plurality of second terminals TM2 are connected to the touch sensing control unit 122. Accordingly, the touch sensing control unit 122 is electrically connected to the first touch sensing wiring 1 and the second touch sensing wiring 2 through the first terminal TM1 and the second terminal TM2.

For example, the first touch sensing wiring 1 can be used as a touch detection electrode, and the second touch sensing wiring 2 can be used as a touch driving electrode. The touch sensing control unit 122 detects a change in the capacitance C1 generated between the first touch sensing wiring 1 and the second touch sensing wiring 2 as a touch signal.

In addition, the roles of the first touch sensing wiring 1 and the roles of the second touch sensing wiring 2 may be reversed. Specifically, the first touch sensing wiring 1 can be used as a touch driving electrode, and the second touch sensing wiring 2 can be used as a touch detection electrode.

In addition, all of the first touch sensing wiring 1 and the second touch sensing wiring 2 may not be used for touch sensing. Among the plurality of first touch sensing wirings 1 and the plurality of second touch sensing wirings 2, wirings not used for touch sensing other than those used for touch sensing may be reduced. That is, a reduction drive can be performed.

Next, a case where the first touch-sensing wiring 1 is driven for reduction will be described. First, all the touch sensing wirings 1 are divided into a plurality of groups. The number of groups is smaller than the number of all the first touch sensing wirings 1. The number of wires forming a group is, for example, six. Here, among all the wirings (the number of wirings is six), for example, two wirings are selected (the number of wirings is less than the total number of wirings, and two are less than six). In one group, the selected two wirings are used for touch sensing, and the potentials in the remaining four wirings are set as floating potentials. The display device DSP1 has a plurality of groups, so that the touch sensing can be performed according to the groups with the functions of wiring defined as described above. Similarly, the second touch sensing wiring 2 can be driven in a reduced manner.

When the pointer used for the touch is a finger or a pen, the area and capacitance of the pointer that is in contact or approached are different. The number of wires to be saved can be adjusted according to the size of such an indicator. For a pointer with a thin tip such as a pen or a needle tip, it is possible to reduce the number of wirings and use a matrix of high-density touch sensing wirings. A matrix of high-density touch sensing wiring can also be used for fingerprint authentication.

In this way, the touch sensing driving is performed in groups, thereby reducing the number of wirings used for scanning or detection, and thus improving the touch sensing speed. In addition, in the above example, the number of wirings forming a group is six, but for example, a group of ten or more wirings may be used to form a group, and the selected two wirings may be used in a group for touch sense. Measurement. That is, by reducing the number of wirings (the number of wirings that become floating potentials), the density of the selected wirings (density of the selected wirings to the total number of wirings) used for touch sensing is reduced, and the selected wirings Scanning or detection can help reduce power consumption and improve touch detection accuracy. On the contrary, the number of wirings to be reduced is reduced, the density of the selected wirings used for touch sensing is increased, and the selected wirings are used for scanning or detection, so that, for example, they can be used for fingerprint authentication and input using a stylus.

The reduced wiring (wiring not used for touch sensing), for example, is in a state of being electrically floating, that is, the potential is in a floating state. In order to obtain the proximity distance between the surface of the display device DSP1 (the face facing the observer) and a pointer such as a finger, the potential of the first touch sensing wiring 1 or the second touch sensing wiring 2 can be set to a floating state. . After detecting the position of a pointer such as a finger, in order to improve the accuracy of the next detection signal, any one of the first touch sensing wiring 1 and the second touch sensing wiring 2 can be grounded for resetting ( reset) (set the potential to 0V). In addition, in order to improve the accuracy of the detection signal, a voltage that alternately reverses the phase of the touch driving voltage may be used. Such a means for improving the accuracy of the touch detection signal is effective even when the pointer is an active pointer (for example, a pointer that generates a detection instruction signal from a pen-shaped pointer). .

Regarding the floating pattern in the above-mentioned reduced driving, in the first touch sensing wiring 1 and the second touch sensing wiring 2, the detection electrode and the driving electrode can be switched by driving of the switching element to achieve high performance. Fine touch sensing.

In addition, the floating mode in the above-mentioned reduced driving can also be switched by being electrically connected to the ground (grounded to the frame). In order to improve the S / N ratio of touch sensing, the signal wiring of active components such as TFT (thin film transistor) can be temporarily grounded to the ground (frame, etc.) when the touch sensing signal is detected.

In addition, in order to reset the electrostatic capacitance detected by the touch sensing control, a touch wiring that requires a relatively long time is used, that is, the time constant (product of capacitance and resistance value) in touch sensing is large Of touch wiring. In this case, for example, in the arrangement of the touch wiring, the odd-numbered rows of wiring and the even-numbered rows of wiring may be alternately used for sensing, and driving with an adjusted time constant may be performed.

In addition, a plurality of touch wirings can be grouped for driving and detection. As for the driving of the grouping of the plurality of touch wirings, a line sequential driving may not be adopted, but a one-time detection driving method called a self-detection method may be adopted based on the group unit. In addition, parallel driving may be performed on a group basis. In addition, in order to eliminate noise such as parasitic capacitance, a differential detection method that acquires a difference in detection signals of touch wirings that are close to or adjacent to each other may be adopted. Compared with the touch sensing wiring located in the center of the display section 110, the touch sensing wiring located in a region close to the frame portion (outside area of the display section 110 and an area where no image display is performed) has a sensitivity of touch sensing Low tendency. Therefore, the width and shape of the touch sensing wiring can be adjusted to reduce the difference in sensitivity.

The touch sensing control unit 122 and the image signal control unit 121 can also control the touch sensing drive and the liquid crystal drive (pixel drive) by using time-sharing driving. The frequency of the touch drive can be adjusted according to the required speed of the touch input. The touch driving frequency can be set to a higher frequency than the liquid crystal driving frequency. The touch timing from a pointer such as a finger is irregular and short-term, so it is desirable that the touch driving frequency is high.

Several methods are known to make the touch sensing driving and the pixel driving have different frequencies. For example, in the normally-off liquid crystal driving, when the black display is off, the backlight emission can be turned off to perform the black display, and the black display period (the period that has no effect on the liquid crystal display) can be performed. Driven by touch sensing. In this case, various touch driving frequencies can be selected.

    (Laminated structure of touch sensing wiring)    

Fig. 8 is a diagram showing the first touch sensing wiring 1, the insulating layer I, and the second touch sensing wiring 2 provided on the counter substrate 100 according to the first embodiment of the present invention, and showing the second diagram An enlarged cross-sectional view of a portion indicated by the symbol W1.

In the present embodiment, a direction in which the observer P observes the display device DSP1, that is, a direction from the second surface MS toward the first surface MF of the transparent substrate 40 is referred to as an observation direction OB.

The plurality of first touch sensing wirings 1 have a structure in which a first black layer 16 and a first conductive layer 15 are sequentially laminated in the observation direction OB. The plurality of second touch sensing wirings 2 have a structure in which a second black layer 36 and a second conductive layer 35 are sequentially laminated in the observation direction OB. The second black layer 36 has the same structure as the first black layer 16. The second conductive layer 35 has the same structure as the first conductive layer 15. That is, the first touch sensing wiring 1 and the second touch sensing wiring 2 have the same layer structure.

The insulating layer I is provided above the second surface MS, and is disposed between the first touch sensing wiring 1 and the second touch sensing wiring 2.

Since the first touch sensing wiring 1 and the second touch sensing wiring 2 each have a black layer, the first touch sensing wiring 1 and the second touch sensing wiring 2 orthogonally arranged in a grid form function as a black matrix. Function to increase display contrast.

In FIG. 7, each of the first touch sensing wiring 1 and the second touch sensing wiring 2 has a two-layer structure including a black layer and a conductive layer, but the present invention is not limited to this structure. Each of the first touch-sensing wiring 1 and the second touch-sensing wiring 2 can be formed with a laminated structure having a larger number of layers than two. In addition, a three-layer laminated structure in which a conductive layer is supported by two black layers may also be adopted.

The first conductive layer 15 has, for example, a three-layer structure in which a copper alloy layer capable of having the metal layer 20 is supported by the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22.

In cross-section, the line widths of the black layer and the conductive layer that constitute the first touch sensing wiring 1 and the second touch sensing wiring 2 can be set to approximately the same. Specifically, after a conductive layer is formed using a known photolithography method, dry etching using a patterned conductive layer as a mask can be performed, so that the line width in the cross-section of the black layer and the conductive layer can be approximately the same. To form touch sensing wiring. For example, the technology described in Japanese Patent Application Laid-Open No. 2015-004710 can be applied.

    (Conductive metal oxide layer)    

The metal layer 20 constituting at least a part of the first conductive layer 15 and the second conductive layer 35 can be held by the conductive metal oxide layers 21 and 22. In other words, as the structures of the first conductive layer 15 and the second conductive layer 35, a three-layer structure composed of the first conductive metal oxide layer 21, the metal layer 20, and the second conductive metal oxide layer 22 can be adopted. . A nickel, zinc, indium, titanium, molybdenum, tungsten, or the like may be further inserted at the interface between the first conductive metal oxide layer 21 and the metal layer 20 or at the interface between the second conductive metal oxide layer 22 and the metal layer 20. Metals other than copper and alloys of these metals.

Specifically, as the material of the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22, for example, a material including a material including indium oxide, zinc oxide, antimony oxide, tin oxide, gallium oxide, and A composite oxide of two or more metal oxides selected from the group consisting of bismuth oxide. By adjusting the composition of these metal oxides, the value of the work function can be adjusted, and the carrier release property when the organic EL is used as the light-emitting layer can be adjusted.

The amount of indium (In) contained in the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 must be more than 80 at%.

That is, the conductive metal oxide layer is formed of a composite oxide containing indium oxide, zinc oxide, and tin oxide, and the indium (In), zinc (Zn), and tin (Sn) contained in the composite oxide are made of In. The atomic ratio represented by / (In + Zn + Sn) is larger than 0.8 and the atomic ratio of Zn / Sn is larger than 1.

The amount of indium (In) is preferably more than 80 at%. The amount of indium (In) is more preferably more than 90 at%. When the amount of indium (In) is less than 80 at%, the specific resistance of the formed conductive metal oxide layer becomes large, which is not preferable. When the amount of zinc (Zn) exceeds 20 at%, the alkali resistance of the conductive metal oxide (mixed oxide) is lowered, which is not preferable. Each of the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 described above is an atomic percentage of a metal element in the mixed oxide (the oxygen element is not counted but only the metal element is counted). Antimony oxide and bismuth oxide can be added to the above-mentioned conductive metal oxide layer because antimony metal and bismuth oxide hardly form a solid solution domain with copper and suppress the diffusion of copper in the laminated structure.

When the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 include tin oxide and zinc oxide, the amount of zinc (Zn) must be set larger than the amount of tin (Sn). If the content of tin exceeds the content of zinc, the wet etching in the subsequent step causes a hindrance. In other words, the metal layer of copper or copper alloy becomes easier to be etched than the conductive metal oxide layer, and the first conductive metal oxide layer 21 and the metal layer 20, the second conductive metal oxide layer 22 and the metal layer 20 The width becomes easy to make a difference.

When the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 include tin oxide and zinc oxide, the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 The amount of tin (Sn) contained is preferably within a range of 0.5 at% to 6 at%. In comparison with indium, adding at least 0.5 at% to 6 at% of tin to the conductive metal oxide layer can reduce the above-mentioned ternary mixed oxide film of indium, zinc, and tin (conductivity Specific oxide layer). When the amount of tin exceeds 6 at%, the specific resistance of the ternary mixed oxide film (conductive composite oxide layer) becomes too large because zinc is added to the conductive metal oxide layer. By adjusting the amount of zinc and tin within the above range (0.5at% to 6at%), the specific resistance can be included in the specific resistance of the single-layer film of the mixed oxide film to about 3 × 10 ^-4 Within a small range from Ωcm to 5 × 10 ^-4 Ωcm. To the mixed oxide, other elements such as titanium, zirconium, magnesium, aluminum, and germanium can be added in a small amount. However, in this embodiment, the specific resistance of the mixed oxide is not limited to the above-mentioned range.

    (Conductive layer)    

The first conductive layer 15 and the second conductive layer 35 can be formed of a conductive material such as the metal layer 20. As the metal layer 20, for example, a copper layer, a copper alloy layer, a silver layer, a silver alloy layer, or an aluminum alloy layer (containing an aluminum layer) containing aluminum, or gold, titanium, molybdenum, or the like can be used. alloy. Since nickel is a ferromagnetic material, the film forming rate is reduced, but it can be formed by vacuum film formation such as sputtering. Chromium has the disadvantages of environmental pollution and large resistance, but it can be used as a material for the metal layer in this embodiment. In order to obtain the adhesiveness of the conductive layer to the transparent substrate 40 and the transparent resin layer, it is preferable to use aluminum by adding magnesium, calcium, titanium, molybdenum, indium, tin, zinc, neodymium, nickel, aluminum, and antimony. Alloy selected from the group consisting of more than one metal element.

As the metal layers used in the first conductive layer 15 and the second conductive layer 35 constituting the first touch sensing wiring 1 and the second touch sensing wiring 2, respectively, 1.5at% relative to silver can be used. Calcium silver alloy. In either of the first conductive layer 15 and the second conductive layer 35, a three-layer structure in which the silver alloy layer is supported by a composite oxide layer including indium oxide, zinc oxide, and tin oxide can be used.

In a three-layer laminated structure supported by a conductive metal oxide layer, for example, magnesium and calcium added to copper and silver are selectively oxidized during heat treatment, and the conductive metal oxide and the metal layer are easily oxidized. Interface precipitation. Alternatively, magnesium oxide or calcium oxide is precipitated on the surface or cross section of a copper alloy or a silver alloy by oxidation. Such selective oxidation and precipitation suppress the migration of copper and silver, and as a result, the reliability of the three-layer laminated structure can be improved. If the amount of the metal element added to the metal layer 20 is 4 at% or less, the resistance value of the copper alloy and the silver alloy does not increase significantly, so it is preferable. As a method for forming a copper alloy, a silver alloy, and a conductive metal oxide, for example, a vacuum film formation method such as sputtering can be used.

When a copper alloy film, a silver alloy film, or a thin film of an aluminum alloy is used as the metal layer 20, if the film thickness is 100 nm or more or 150 nm or more, it becomes almost impossible to transmit visible light. Therefore, if the metal layer 20 of this embodiment has a film thickness of 100 nm to 300 nm, for example, sufficient light shielding properties can be obtained. The film thickness of the metal layer 20 may exceed 300 nm. As described later, the material of the conductive layer can also be applied to wirings and electrodes provided on an array substrate described later. In addition, in this embodiment, as the structure of the wiring electrically connected to the active device, for example, as the structure of the gate electrode, the gate wiring, the common electrode, and the common wiring (described later), a conductive metal oxide can be used. The layer holds the laminated structure of the metal layer.

In the case where the metal layer 20 is a copper layer, a copper alloy layer, or a silver layer or a silver alloy, the conductive metal oxide layer described above preferably contains indium oxide, zinc oxide, antimony oxide, gallium oxide, and oxide. A composite oxide of two or more metal oxides selected from bismuth and tin oxide. A copper layer, a copper alloy layer, or a silver layer or a silver alloy has low adhesion to a transparent resin layer and a glass substrate (transparent substrate) constituting a color filter. Therefore, when a copper layer, a copper alloy layer, or a silver layer, or a silver alloy copper layer is directly applied to a display device substrate, it is difficult to realize a practical display device substrate. However, the above-mentioned composite oxide has sufficient adhesion to a color filter (color pattern of plural colors), a black matrix BM (black layer), and a glass substrate (transparent substrate). The closeness of the layers is also sufficient. Therefore, when a composite oxide is used to apply a copper alloy layer or a silver alloy layer to a display device substrate, a practical display device substrate can be realized.

In addition, as the metal layer 20 used for the gate electrode and the gate wiring constituting the thin film transistor, a silver alloy containing, for example, 1.5 at% calcium relative to silver can be used. A three-layer structure in which the silver alloy layer is supported by a composite oxide layer containing indium oxide, zinc oxide, and tin oxide can be used.

Copper, copper alloys, silver, silver alloys, or their oxides and nitrides generally do not have sufficient adhesion to transparent substrates such as glass, black matrices, and the like. Therefore, if the conductive metal oxide layer is not provided, peeling may occur at the interface between the touch sensing wiring and a transparent substrate such as glass or the interface between the touch sensing wiring and the black layer. When copper or a copper alloy is used as the first touch sensing wiring 1 and the second touch sensing wiring 2 having a fine wiring pattern, a conductive metal oxide layer is not formed as the metal layer (copper or copper alloy). In the display device substrate (opposite substrate) of the base layer), in addition to the defects caused by peeling, there are also defects caused by electrostatic damage in the touch sensing wiring during the manufacturing process of the display device substrate. The situation is not practical. The electrostatic damage in the first touch sensing wiring 1 and the second touch sensing wiring 2 is due to a subsequent step of laminating a color filter on a transparent substrate or bonding a display device substrate and an array substrate. Step, washing step, etc., static electricity accumulates in the wiring pattern, and the phenomenon of pattern defect, disconnection, etc. occurs due to electrostatic destruction.

Copper, a copper alloy, or silver or a silver alloy has high electrical conductivity, and is preferably a wiring material. However, on the surface of a copper alloy, a copper oxide having no conductivity is formed over time, and electrical contact may become difficult. Silver and silver alloys easily form sulfides and oxides. On the other hand, by covering a copper alloy layer and a silver alloy layer with a composite oxide layer such as indium oxide, zinc oxide, antimony oxide, and tin oxide, stable ohmic contact can be achieved. When such a composite oxide layer is used, Electrical construction such as transfer in the third embodiment described later can be easily performed.

As a layer structure composed of the first conductive metal oxide layer 21, the metal layer 20, and the second conductive metal oxide layer 22 that can be applied to the embodiment of the present invention, the following modifications are exemplified. For example, in the case of ITO (Indium Tin Oxide) or IZTO (Indium Zinc Tin Oxide (Z is zinc oxide)) containing indium oxide as a center substrate, in a state of insufficient oxygen, for example, by using a copper alloy A layer structure obtained by forming a conductive metal oxide layer on a metal layer such as a layer, or by mixing molybdenum oxide, tungsten oxide, a mixed oxide of nickel oxide and copper oxide, titanium oxide, and the like A layer structure obtained by laminating on a metal layer such as an aluminum alloy or a copper alloy. The three-layer structure in which a metal layer is held by a conductive metal oxide layer has an advantage that continuous film formation can be performed in a vacuum film forming apparatus such as a sputtering apparatus.

For example, from the viewpoint of etching the silver alloy layer and the conductive metal oxide layer at one time, a composite oxide containing zinc oxide and gallium oxide in a conductive metal oxide layer that supports a silver alloy can be used. Such a layered structure of a silver alloy layer and a conductive metal oxide layer can be patterned by a single etching process using a well-known photolithography method with a single liquid etchant. For example, as a light-reflective pixel electrode of an organic EL described later, a composite oxide of indium oxide, gallium oxide, and antimony oxide can be applied as a conductive metal oxide layer. The composite oxide system of indium oxide, gallium oxide, and antimony oxide has a high work function. As an anode of an organic EL display device, a laminated structure of a composite oxide of indium oxide, gallium oxide, and antimony oxide and a silver alloy layer is suitable for a pixel electrode.

The first conductive metal oxide layer 21 and the second conductive metal oxide layer 22 have barrier properties against copper and silver. In terms of a structure in which a copper wire and a silver wire are held by a conductive metal oxide, deterioration of an active device due to migration of copper or silver can be suppressed, and highly conductive wiring for an active device is preferable.

    (Black layer)    

The first black layer 16 and the second black layer 36 function as a black matrix of the display device DSP1. The black layer is made of, for example, a coloring resin in which a black color material is dispersed. It is difficult to obtain sufficient black and low reflectivity for copper oxides and copper alloy oxides. For example, in the case where a black layer is formed with a metal oxide, the light reflectance in the visible light region is approximately 10% to 30%, and it is difficult to obtain a flat reflectance in the visible light region and the coloration can be seen. In this embodiment, the reflectance of visible light at the interface between the black layer, a substrate such as glass, and a transparent resin layer is suppressed to approximately 3% or less, and high visibility can be obtained. The transparent resin includes an adhesive layer for attaching a protective glass to a display device.

As a black color material, carbon, a carbon nanotube, a carbon nanohorn, a carbon nanobrush, or a mixture of a plurality of organic pigments can be applied. For example, carbon is used as a main color material at a ratio of 51% by mass or more with respect to the total amount of the black color material. In order to adjust the reflection color, an organic pigment such as blue or red can be added to a black color material and used. For example, the reproducibility of the black layer in the photolithography step can be improved by adjusting the carbon concentration (reducing the carbon concentration) contained in the photosensitive black coating liquid of the starting material.

In the case of a large-sized exposure device using a manufacturing device of the display device DSP1, for example, a black layer (patterned) having a pattern having a width (thin lines) of 1 to 9 μm can be formed. The range of the carbon concentration in the present embodiment is set to a range of 4 to 50% by mass based on the entire solid content including the resin, the hardener, and the pigment. Here, as the carbon content, the carbon concentration may exceed 50% by mass, but if the carbon concentration exceeds 50% by mass with respect to the entire solid content, the coating film suitability tends to decrease. In addition, when the carbon concentration is set to less than 4% by mass, sufficient black cannot be obtained, and the reflected light generated by the metal layer of the base under the black layer may be easily seen, which may reduce visibility.

When the exposure processing is performed in the photolithography method in the subsequent step, alignment of the substrate and the mask of the exposure target is performed. In this case, the alignment is preferentially performed. For example, the optical density of the black layer by transmission measurement can be set to 2 or less. In addition to carbon, a black layer may be formed by using a mixture of a plurality of organic pigments as a color adjustment of black. Considering the refractive index (about 1.5) of substrates such as glass and transparent resin, the reflectance of the black layer is set so that the reflectance at the interface between the black layer and those substrates becomes 3% or less. In this case, it is desirable to adjust the content and type of the black color material, the resin used in the color material, and the film thickness. By optimizing these conditions, the reflectance at the interface between a base material such as glass and a black layer having a refractive index of about 1.5 and the black layer can be set to 3% or less in the visible wavelength region, and a low reflectance can be achieved. Considering the necessity of preventing the reflection of the light reflected from the light emitted from the backlight unit from re-reflecting, or improving the visibility of the observer P, it is desirable that the reflectance of the black layer is set to 3% or less.

In addition, the refractive index of an acrylic resin or a liquid crystal material used in a color filter is generally within a range of 1.5 to 1.7.

The black layer is not only disposed on one side (the surface close to the viewer P) in contact with the conductive layer, but may be formed near the surface in contact with the liquid crystal layer 300.

In other words, the touch sensing wiring in this embodiment may have a five-layer structure of "black layer / conductive metal oxide layer / silver alloy layer / conductive metal oxide layer / black layer". Here, the silver alloy layer can be replaced with silver, copper, or a copper alloy.

When the active element provided in the array substrate has sensitivity in the visible light region, reflected light from the back surface of the conductive layer may enter the active element, which may cause the active element to malfunction. By arranging a black layer on the opposite side of the display functional layer (the back surface of the conductive layer) together, it is possible to prevent malfunction of the active device caused by the incident of the reflected light.

    (Liquid crystal layer 300)    

In the first embodiment, the display functional layer type liquid crystal layer 300 of the present invention includes liquid crystal molecules having a positive dielectric anisotropy. The initial alignment of the liquid crystal molecules is parallel to the substrate surface of the counter substrate 100 or the array substrate 200. In the liquid crystal driving of the first embodiment using the liquid crystal layer 300, the driving voltage is applied to the liquid crystal molecules across the liquid crystal layer in a plan view. Therefore, the liquid crystal is driven by a transverse electric field called FFS (Fringe Field Switch). . The dielectric anisotropy of the liquid crystal molecules of the liquid crystal layer 300 may be positive or negative. When the liquid crystal molecules of the liquid crystal layer 300 have a negative dielectric anisotropy, for example, it is difficult to be affected by the charge of the pointer when a pointer such as a finger contacts or approaches the counter substrate. Therefore, a negative liquid crystal is desirable. In other words, in the case where the liquid crystal molecules have a negative dielectric anisotropy, the liquid crystal molecules are affected by the charge when the pointer approaches the opposing substrate, and there are few cases of light leakage caused by tilting in the thickness direction of the liquid crystal layer. .

    (Structure of array substrate 200)    

Next, the structure of the array substrate 200 constituting the display device DSP1 will be described. FIG. 9 is a plan view partially showing an array substrate 200 included in the display device DSP1 according to the first embodiment of the present invention. Fig. 10 is a sectional view partially showing an array substrate 200 included in the display device DSP1 according to the first embodiment of the present invention, and is a sectional view taken along the line C-C 'shown in Fig. 9. FIG. 10 shows an example of a thin film transistor (TFT) having a top gate structure. In FIG. 10, the pixel electrode 29, the contact hole CH, and the common electrode 17 located above the pixel electrode 29 are not shown in a cross section along the line C-C 'in FIG. 9 with a dotted line. The contact hole CH is configured to conduct the pixel electrode 29 and the drain electrode 26 formed on the second insulating layer 12 as shown in FIG. 9.

As shown in FIGS. 2, 9, and 10, the array substrate 200 includes a transparent substrate 41 (second transparent substrate), a fourth insulating layer 14 formed so as to cover the surface of the transparent substrate 41, and The first source wiring 31 and the second source wiring 32 on the fourth insulating layer 14 and the third source wiring 31 formed on the fourth insulating layer 14 so as to cover the first source wiring 31 and the second source wiring 32. Insulating layer 13, first gate wiring 10 and second gate wiring 9 formed on third insulating layer 13, and common wiring 30 formed on third insulating layer 13 to cover first gate wiring 10, first 2 gate wiring 9 and common wiring 30 are formed on the second insulating layer 12 on the third insulating layer 13, the pixel electrode 29 is formed on the second insulating layer 12, and the second electrode layer 29 is formed on the second insulating layer so as to cover the pixel electrode 29. A first insulating layer 11 on the insulating layer 12 and a common electrode 17 formed on the first insulating layer 11. The common wiring 30 is connected to the common electrode 17 through a through-hole 29s and contact holes 11H and 12H shown in FIG. 9.

    (Active element 28)    

As shown in FIG. 10, the active element 28 includes a channel layer 27, a drain electrode 26 connected to one end of the channel layer 27 (first end, left end of the channel layer 27 in FIG. 10), and The other end (the second end, the right end of the channel layer 27 in FIG. 10) is connected to the source electrode 24, and the gate electrode 25 is disposed to face the channel layer 27 through the third insulating layer 13. FIG. 10 shows a structure in which the channel layer 27, the drain electrode 26, and the source electrode 24 constituting the active element 28 are formed on the fourth insulating layer 14, but the present invention is not limited to such a structure. The active element 28 may be formed directly on the transparent substrate 41 without providing the fourth insulating layer 14. In addition, a thin film transistor with a bottom gate structure can also be applied.

The first source wiring 31 and the second source wiring 32 are supplied with image signals at a high frequency, and noise is easily generated from the first source wiring 31 and the second source wiring 32. In terms of the top gate structure, there is an advantage that the first source wiring 31 and the second source wiring 32, which are also sources of noise, can be kept away from the aforementioned touch sensing wiring.

The source electrode 24 and the drain electrode 26 shown in FIG. 10 are formed with conductive layers of the same structure in the same steps. In the first embodiment, a three-layer structure such as titanium / aluminum alloy / titanium, molybdenum / aluminum alloy / molybdenum is used as the structure of the source electrode 24 and the drain electrode 26. Here, the aluminum alloy is an aluminum-neodymium alloy.

The third insulating layer 13 located under the gate electrode 25 may be an insulating layer having the same width as the gate electrode 25. In this case, for example, dry etching using the gate electrode 25 as a mask is performed to remove the third insulating layer 13 around the gate electrode 25. Thereby, an insulating layer having the same width as that of the gate electrode 25 can be formed. The technique of processing the insulating layer by dry etching using the gate electrode 25 as a mask is generally called self-alignment.

The driving of organic EL and LED derived from a thin film transistor having a channel layer formed using an oxide semiconductor is better than the driving of a thin film transistor having a channel layer formed using a polycrystalline silicon semiconductor.

For example, an oxide semiconductor system called IGZO is formed at one time by vacuum deposition such as sputtering. After the oxide semiconductor is formed into a film, a heat treatment after forming a pattern such as a TFT is also performed at one time. Therefore, there is very little variation in the electrical characteristics (eg, Vth) related to the channel layer. In order to suppress the variation in luminance of the organic EL and LED, it is necessary to suppress the variation in Vth of the thin-film transistor in a small range.

On the other hand, in a thin film transistor having a channel layer formed using a polycrystalline silicon semiconductor, laser annealing must be applied to amorphous silicon, which is a precursor of the thin film transistor, for each transistor. Vth variation of the crystal. From this viewpoint, the thin film transistor used in a display device including an organic EL and LED is preferably a thin film transistor including a channel layer formed of an oxide semiconductor.

In addition, a thin-film transistor system having a channel layer formed of an oxide semiconductor has extremely low leakage current, and therefore has high stability after inputting a scan signal and an image signal. Compared with a transistor of an oxide semiconductor, a thin-film transistor having a channel layer formed of a polycrystalline silicon semiconductor has a leakage current that is two digits or more. This small leakage current is helpful for high-precision touch sensing, which is better.

As a material of the channel layer 27, for example, an oxide semiconductor called IGZO can be used. As the material of the oxide semiconductor constituting the channel layer 27, a material containing one or more metal oxides selected from the group consisting of gallium, indium, zinc, tin, aluminum, germanium, and cerium can be used, and at least A material containing a metal oxide of either antimony or bismuth.

In this embodiment, an oxide semiconductor including indium oxide, gallium oxide, and zinc oxide is used. The material of the channel layer 27 formed of an oxide semiconductor may be any of single crystal, polycrystal, microcrystal, a mixture of microcrystal and amorphous, or an amorphous one. The film thickness of the oxide semiconductor can be set to a film thickness in a range of 2 nm to 50 nm. The channel layer 27 may be formed using a polycrystalline silicon semiconductor.

In addition, a structure in which two thin film transistors are laminated may be adopted. In this case, a thin-film transistor having a channel layer formed of a polycrystalline silicon semiconductor is used as a thin-film transistor located below. A thin film transistor having a channel layer formed of an oxide semiconductor is used as the thin film transistor located on the upper layer. In such a structure in which two thin film transistors are laminated, the thin film transistors are arranged in a matrix shape in a plan view. In this structure, a high mobility can be obtained by a polycrystalline silicon semiconductor, and a low leakage current can be realized by an oxide semiconductor. That is, the advantages of the polycrystalline silicon semiconductor and the advantages of the oxide semiconductor can be used together.

An oxide semiconductor or a polycrystalline silicon semiconductor can be used in, for example, a structure of a complementary transistor having a p / n junction, or a structure of a single-channel transistor having only an n-type junction. As the laminated structure of the oxide semiconductor, for example, a laminated structure of a laminated n-type oxide semiconductor and an n-type oxide semiconductor having electrical characteristics different from those of the n-type oxide semiconductor can be used. The stacked n-type oxide semiconductor can be composed of a plurality of layers. In the laminated n-type oxide semiconductor, the band gap of the n-type semiconductor on the base can be made different from the band gap of the n-type semiconductor on the upper layer.

The upper surface of the channel layer may be adopted, for example, a structure covered with a different oxide semiconductor.

Alternatively, for example, a laminated structure in which a microcrystalline (nearly amorphous) oxide semiconductor is laminated on a crystalline n-type oxide semiconductor may be adopted. Here, the microcrystal means, for example, a microcrystalline oxide semiconductor film which is heat-treated in a range of 180 ° C. to 450 ° C. to an amorphous oxide semiconductor formed by a sputtering device. Alternatively, it refers to a microcrystalline oxide semiconductor film formed with the substrate temperature at the time of film formation being set to about 200 ° C. The microcrystalline oxide semiconductor film system can observe an oxide semiconductor film with crystal grains of at least about 1 nm to 3 nm or larger than 3 nm by an observation method such as TEM.

An oxide semiconductor can improve carrier mobility and reliability by changing it from amorphous to crystalline. In terms of oxides, the melting points of indium oxide and gallium oxide are high. The melting points of antimony oxide and bismuth oxide are both below 1000 ° C, and the melting points of oxides are low. For example, when a ternary compound oxide of indium oxide, gallium oxide, and antimony oxide is used, the effect of antimony oxide having a low melting point can reduce the crystallization temperature of the compound oxide. In other words, it is possible to provide an oxide semiconductor that can be easily crystallized from an amorphous state to a microcrystalline state. An oxide semiconductor can improve carrier mobility by increasing its crystallinity.

As an oxide semiconductor, since the solubility of wet etching in a subsequent step is required, a composite oxide rich in zinc oxide, gallium oxide, or antimony oxide can be used. For example, as the atomic ratio of the metal element of the target used for sputtering, In: Ga: Zn = 1: 2: 2, In: Ga: Zn = 1: 3: 3, In: Ga: Zn = 2: 1: 1, or In: Ga: Zn = 1: 1: 1. Here, Zn can be substituted with, for example, Sb (antimony) and Bi (bismuth).

For example, a binary system composite oxide of indium oxide and antimony oxide can be prepared at an atomic ratio of In: Sb = 1: 1. For example, a binary system composite oxide of indium oxide and bismuth oxide can be prepared at an atomic ratio of In: Bi = 1: 1.

In addition, in the above atomic ratio, the content of In can be further increased.

The composition of the composite oxide is not limited to the composition described above.

For example, Sn may be further added to the above-mentioned composite oxide. In this case, a composite oxide containing a quaternary system composition containing In ₂ O ₃ , Ga ₂ O ₃ , Sb ₂ O ₃ , and SnO ₂ can be obtained, or a compound oxide containing In ₂ O ₃ can be obtained. It is possible to adjust the carrier concentration of a composite oxide having a ternary composition of Sb ₂ O ₃ and SnO ₂ . In ₂ O ₃ , Ga ₂ O ₃ , Sb ₂ O ₃ , Bi ₂ O ₃ and SnO ₂ with different valences play the role of carrier dopants.

For example, a target obtained by adding tin oxide to a ternary metal oxide containing indium oxide, gallium oxide, and antimony oxide is used for sputtering. Thereby, a film of a composite oxide having an increased carrier concentration can be formed. Similarly, for example, a target obtained by adding tin oxide to a ternary metal oxide of indium oxide, gallium oxide, and bismuth oxide is sputter-formed to form a film of a composite oxide having an increased carrier concentration. .

However, if the carrier concentration becomes too high, the threshold Vth of the transistor having a channel layer formed of a composite oxide tends to become negative (easily becomes normally on). Therefore, it is desirable to adjust the amount of tin oxide so that the carrier concentration is less than 1 × 10 ¹⁸ cm ^-3 . In addition, for the carrier concentration and the carrier mobility, the film formation conditions (such as oxygen used in the introduction gas, substrate temperature, film formation rate, etc.) of the composite oxide described above, the annealing conditions after film formation, and the composition are adjusted. The composition of the oxide can obtain a desired carrier concentration and carrier mobility. For example, increasing the composition ratio of indium oxide easily increases the carrier mobility. For example, by performing an annealing step of heat treatment at a temperature of 250 ° C. to 700 ° C., the crystallization of the composite oxide can be developed, and the carrier mobility of the composite oxide can be improved.

In addition, one thin film transistor (active element) having a channel layer formed of an n-type oxide semiconductor and one thin film transistor having a channel layer formed of an n-type silicon semiconductor can be provided in the same pixel. Crystals (active elements) use the characteristics of the channel layer of each thin-film transistor to drive light-emitting layers such as LEDs and organic ELs (OLEDs). When a liquid crystal layer or an organic EL (OLED) is used as a display functional layer, an n-type polycrystalline silicon thin film transistor can be used as a driving transistor for applying a voltage (current) to a light-emitting layer, and an n-type oxide semiconductor thin film transistor can be used. As a switching transistor that sends a signal to this polycrystalline silicon thin film transistor.

The drain electrode 26 and the source electrode 24 (source wirings 31 and 32) can have the same structure. For example, a plurality of conductive layers can be used for the drain electrode 26 and the source electrode 24. For example, an electrode structure that supports aluminum, copper, or an alloy layer thereof with molybdenum, titanium, tantalum, tungsten, or a conductive metal oxide layer can be employed. A drain electrode 26 and a source electrode 24 may be formed on the fourth insulating layer 14 first, and a channel layer 27 may be formed by stacking these two electrodes. The structure of the transistor may be a multi-gate structure such as a double-gate structure. Alternatively, the structure of the transistor in the array substrate may be a double-gate structure in which electrodes are arranged above and below the channel layer.

The semiconductor layer or the channel layer can adjust its mobility and electron concentration in its thickness direction. The semiconductor layer or the channel layer may have a multilayer structure in which different oxide semiconductors are stacked. The channel length of the transistor, which is determined by the minimum distance between the source electrode and the drain electrode, can be set to 10 nm or more and 10 μm or less, for example, 20 nm to 0.5 μm.

The third insulating layer 13 functions as a gate insulating layer. As such an insulating layer material, hafnium silicate (HfSiOx), silicon oxide, aluminum oxide, silicon nitride, silicon oxide nitride, aluminum oxide nitride, zirconium oxide, gallium oxide, zinc oxide, hafnium oxide, and cerium oxide can be used. , Lanthanum oxide, or an insulating layer obtained by mixing these materials. The cerium oxide system has a high dielectric constant, and the combination of cerium and oxygen atoms is strong. Therefore, the gate insulating layer is preferably a composite oxide containing cerium oxide. When cerium oxide is used as one of the oxides constituting the composite oxide, it is easy to maintain a high dielectric constant even in an amorphous state. Cerium oxide has oxidizing power. Cerium oxide can store and release oxygen. Therefore, a structure in which the oxide semiconductor and cerium oxide are in contact can be used to supply oxygen from cerium oxide to the oxide semiconductor to avoid the lack of oxygen in the oxide semiconductor, and a stable oxide semiconductor (channel layer) can be realized. The structure using nitride for the gate insulating layer does not exhibit the effect as described above. In addition, the material of the gate insulating layer may include a lanthanide-based metal silicate typified by cerium silicate (CeSiOx). Alternatively, it can contain lanthanum-cerium composite oxides, even lanthanum-cerium silicate

The structure of the third insulating layer 13 may be a single-layer film, a mixed film, or a multilayer film. In the case of a mixed film or a multilayer film, a mixed film or a multilayer film can be formed using a material selected from the above-mentioned insulating layer materials. The film thickness of the third insulating layer 13 is, for example, a film thickness that can be selected from a range of 2 nm to 300 nm. When the channel layer 27 is formed using an oxide semiconductor, the interface of the third insulating layer 13 in contact with the channel layer 27 can be formed in a state containing a large amount of oxygen (film-forming gas environment).

In the manufacturing process of the thin film transistor, after forming an oxide semiconductor, a thin film transistor having a top gate structure can form a gate insulating layer containing cerium oxide in an introduction gas containing oxygen. In this case, the surface of the oxide semiconductor under the gate insulating layer can be oxidized, and the degree of oxidation of the surface can be adjusted. The step of forming the gate insulating layer of the thin film transistor system with a bottom gate structure is performed before the step of the oxide semiconductor, so it is difficult to adjust the degree of oxidation of the surface of the oxide semiconductor. Compared with the case of the bottom gate structure, the thin film transistor with the top gate structure can promote the oxidation of the surface of the oxide semiconductor, and it is difficult to generate the oxygen deficiency of the oxide semiconductor.

The plurality of insulating layers including the first insulating layer 11, the second insulating layer 12, the third insulating layer 13, and the oxide semiconductor substrate (the fourth insulating layer 14) can be formed using an inorganic insulating material or an organic insulating material. . As a material of the insulating layer, silicon oxide, silicon oxide nitride, or aluminum oxide can be used. As a structure of the insulating layer, a single layer or a plurality of layers including the above-mentioned materials can be used. It may be a structure in which a plurality of layers formed of different insulating materials are laminated. In order to obtain the effect of flattening the upper surface of the insulating layer, an acrylic resin, a polyimide resin, a benzocyclobutene resin, a polyimide resin, or the like may be used for a part of the insulating layer. Low dielectric materials (low-k materials) can also be used.

A gate electrode 25 is provided on the channel layer 27 through the third insulating layer 13. The gate electrode 25 (gate wiring 10) can be formed in the same step by using the same material and the same layer structure as the common electrode 17 and the common wiring 30. The gate electrode 25 may be formed using the same material and the same layer structure as those of the drain electrode 26 and the source electrode 24 described above. As the structure of the gate electrode 25, a structure in which a copper layer or a copper alloy layer is supported by a conductive metal oxide, or a structure in which silver or a silver alloy is supported by a conductive metal oxide can be adopted.

The surface of the metal layer 20 exposed at the end of the gate electrode 25 may be covered with a composite oxide containing indium. Alternatively, the entire gate electrode 25 including, for example, an end portion (section) of the gate electrode 25 may be covered with a nitride such as silicon nitride or molybdenum nitride. Alternatively, an insulating film having a film composition thicker than 50 nm and having the same composition as the gate insulating layer described above may be used.

As a method of forming the gate electrode 25, before the gate electrode 25 is formed, only the third insulating layer 13 located directly above the channel layer 27 of the active element 28 can be dry-etched, etc. Reduced thickness.

An oxide semiconductor having different electrical properties may be further inserted at the interface of the gate electrode 25 in contact with the third insulating layer 13. Alternatively, the third insulating layer 13 may be formed of an insulating metal oxide layer containing cerium oxide and gallium oxide.

Specifically, in order to suppress the noise caused by the image signal supplied to the source wiring 31 from being transmitted to the common wiring 30, the third insulating layer 13 must be thickened. On the other hand, the third insulating layer 13 has a function as a gate insulating film located between the gate electrode 25 and the channel layer 27, and requires an appropriate film thickness in consideration of the switching characteristics of the active element 28. In this way, in order to realize the two opposite functions, the third insulating layer located directly above the channel layer 27 will be maintained under the film thickness of the third insulating layer 13 that is substantially maintained between the common wiring 30 and the source wiring 31. The thickness of 13 is reduced, so that it is possible to suppress the noise caused by the image signal supplied to the source wiring from being transmitted to the common wiring 30 and to achieve the desired switching characteristics in the active device 28.

A light-shielding film may be formed under the channel layer 27. As a material of the light-shielding film, high-melting-point metals such as molybdenum, tungsten, titanium, and chromium can be used.

The gate wiring 10 is electrically connected to the active device 28. Specifically, the gate electrode 25 connected to the gate wiring 10 and the channel layer 27 of the active element 28 face each other through the third insulating layer 13. Based on the scanning signal supplied from the image signal control unit 121 to the gate electrode 25, the active element 28 is switched and driven.

The source wirings 31 and 32 are given a voltage as a mapping signal from the mapping signal control unit 121. The source wirings 31 and 32 are provided with a positive or negative voltage image signal, for example, ± 2.5V to ± 5. The voltage applied to the common electrode 17 can be set, for example, within a range of ± 2.5 V in which the amplitude is reversed. In addition, the potential of the common electrode 17 may be a constant potential in a range from a threshold value Vth to 0V of the liquid crystal drive. In a case where this common electrode is applied to a constant-potential driving described later, it is desirable to use an oxide semiconductor for the channel layer 27. The channel layer made of an oxide semiconductor has high withstand voltage. By using a transistor of the oxide semiconductor, a high driving voltage exceeding a range of ± 5V can be applied to the electrode portion, thereby increasing the response of the liquid crystal. For the liquid crystal driving, various driving methods such as width inversion driving, column inversion (vertical line) inversion driving, horizontal line inversion driving, and dot inversion driving can be applied.

When a copper alloy is used as a part of the structure of the gate electrode 25, a metal element or a semi-metal element can be added in a range of 0.1 to 4 at% with respect to copper. By adding an element to copper in this way, an effect such that the migration of copper can be suppressed can be obtained. In particular, it is preferable to precipitate an element which can be arranged at a lattice position of copper by substituting a part of copper atoms in a crystal (grain) of a copper layer and a crystal grain boundary of the copper layer. An element that suppresses the movement of copper atoms near the grains of copper is added to copper together. Alternatively, it is preferable that an element heavier (larger in atomic weight) than copper atoms be added to copper in order to suppress the action of the copper atoms. In addition, it is preferable to select an additional element whose copper conductivity is difficult to decrease at an addition amount in a range of 0.1 to 4 at% with respect to copper. In addition, when a vacuum film formation such as sputtering is considered, an element having a film formation rate such as sputtering is close to that of copper. The technique of adding an element to copper as described above can also be applied if copper is replaced with silver or aluminum. In other words, a silver alloy or an aluminum alloy may be used instead of the copper alloy.

An element which is substituted with a part of copper atoms in the crystal (grain) of the copper layer and can be arranged in the lattice position of copper is added to copper, in other words, a metal or semimetal that forms a solid solution with copper near normal temperature. Added to copper. Examples of metals that easily form a solid solution with copper include manganese, nickel, zinc, palladium, gallium, and gold (Au). An element that precipitates at the crystal grain boundary of the copper layer to suppress the movement of copper atoms near the grains of copper is added to copper, in other words, a metal or semimetal that does not form a solid solution with copper near normal temperature. Examples of metals and semimetals that do not form a solid solution with copper or that are difficult to form a solid solution with copper include various materials. Examples include high-melting-point metals such as titanium, zirconium, molybdenum, and tungsten; and elements called semimetals such as silicon, germanium, antimony, and bismuth. The above-mentioned alloy element can be used as an additive element added to a silver alloy.

From a migration perspective, copper and silver have problems with reliability. By adding the above-mentioned metals and semi-metals to copper, the reliability surface can be supplemented. By adding the above-mentioned metals and semi-metals in an amount of 0.1 at% or more relative to copper and silver, the effect of suppressing migration can be obtained. However, when the above metals and semi-metals are added at a content of more than 4 at% relative to copper or silver, the conductivity of copper and silver deteriorates significantly, and the advantages of the selected copper alloy or silver alloy cannot be obtained.

In the first embodiment and other embodiments described later, the common electrode 17 for driving the display functional layer can be arranged at a position higher than the arrangement position of the pixel electrode in a sectional view of the display device. In other words, under the cross-section of those display devices, the wiring of the active element and the TFT can be arranged below the common electrode 17. That is, the common electrode 17 is provided closer to the counter substrate 100 than the pixel electrode 29. Hereinafter, such a structure is referred to as a pixel electrode lower structure.

The pixel electrode lower structure can ground the common electrode 17 through a resistor. For example, the common potential can be set to a constant potential of 0 V (volt). As described below, when the display functional layer is a liquid crystal layer, the lower structure of the pixel electrode has a great advantage.

    (Liquid crystal layer driving of pixel electrode lower structure)    

Since the common potential of the pixel electrode lower structure does not substantially change, the potential of the source wiring provided to the image signal is changed. When the display function layer is a liquid crystal layer, the voltage applied to the source wiring is switched to positive and negative polarities. The source wiring system of this embodiment is distinguished from a first source wiring 31 having a negative polarity and a second source wiring 32 having a positive polarity.

Referring to FIGS. 11 and 12, the inversion driving from the gate wirings 9 and 10 and the source wirings 31 and 32, and specifically, the liquid crystal driving method from the column inversion driving or the dot inversion driving will be described. FIG. 11 is a circuit diagram partially showing a display device DSP1 of the first embodiment of the present invention, and is an explanatory diagram showing a state of a liquid crystal driving voltage in each pixel when the liquid crystal display device is driven by column inversion driving. FIG. 12 is a circuit diagram partially showing a display device DSP1 of the first embodiment of the present invention, and is an explanatory diagram showing a state of a liquid crystal driving voltage in each pixel when the liquid crystal display device is driven by dot inversion driving.

In this embodiment, as described above, the potential of the second source wiring 32 has a positive polarity, and the first source wiring 31 has a negative polarity, and pixel inversion driving is performed in each pixel. The gate wiring selected at the time of reverse driving may be the reverse of the width of the entire gate wiring of the display screen, or half of the gate wirings of all the lines may be selected for reverse driving. Reverse driving can be performed by sequentially selecting horizontal lines and intermittently selecting horizontal lines for reverse driving.

For example, FIG. 11 shows the polarity of each pixel in the case where even-numbered gate wirings among a plurality of gate wirings (complex lines) are selected, and the selected gate wiring sends a gate signal to the active device. Here, the polarity of the second source wiring 32 is positive, and the polarity of the first source wiring 31 is negative. In this case, pixels having the same polarity are arranged in the vertical direction (Y direction). For example, in the next case where the odd-numbered gate wiring is selected, and the selected gate wiring sends the gate signal to the active device, pixels having the opposite polarity as shown in FIG. 11 are arranged in the same manner In the vertical direction, vertical line inversion driving is performed. In the case where the vertical line is reversed by the width, the frequency of noise generation becomes lower, and the influence on touch sensing becomes smaller.

In FIG. 11, the first source wiring 31, the second source wiring 32, and the first gate wiring 10 are electrically connected to the first active element 28a. The first source wiring 31 and the second source wiring 32 The second gate wiring 9 is electrically connected to the second active element 28b. Since the first source wiring 31 has a negative polarity and the second source wiring 32 has a positive polarity, the polarity of the pixel is determined by selecting the first gate wiring 10 or the second gate wiring 9.

For example, Fig. 12 shows that every two and two sets of gate wirings 9 and 10 are selected among a plurality of gate wirings (plural lines), and the selected gate wirings 9 and 10 send the gate signals. In the case of an active element, the polarity of each pixel. Here, the polarity of the second source wiring 32 is positive, and the polarity of the first source wiring 31 is negative. In this case, pixels having positive and negative polarities are alternately arranged in either of the vertical and horizontal directions. In the next frame, two different sets of gate wirings are selected. The selected gate wirings 9 and 10 send the gate signals to the active components, so that they have a polarity opposite to that shown in Figure 12. The pixels are alternately arranged in the same manner, and dot inversion driving is performed. The inversion driving of the pixels shown in FIGS. 11 and 12 can also be performed in the following embodiments. In addition, in the first embodiment and the second embodiment described later, a general amplitude inversion driving in which a common voltage is inverted positively and negatively may be performed.

For example, the positive voltage in this embodiment is set to 0V to + 5V, and the negative voltage is set to 0V to -5V. When the channel layer 27 is formed of an oxide semiconductor (for example, a compound oxide semiconductor of indium, gallium, and zinc called IGZO), such an oxide semiconductor has high voltage resistance, and therefore, Higher voltages can be used.

The present invention is not limited to the above-mentioned voltages. For example, the positive voltage can be set to 0V to + 2.5V, and the negative voltage can be set to 0V to -2.5V. That is, the upper limit of the positive voltage can be set to + 2.5V, and the lower limit of the negative voltage can be set to -2.5V. In this case, an effect of reducing power consumption, an effect of reducing noise, or an effect of suppressing burn-in of a liquid crystal display can be obtained.

For example, if a transistor (active element) using IGZO with good memory as the channel layer 27 is used, the auxiliary capacitor (constant voltage driving required for constant voltage driving when the common electrode 17 is set to a constant voltage (constant potential)) may be omitted. storage capacitor). The transistor system using IGZO as the channel layer 27 differs from a transistor using a silicon semiconductor in that the leakage current is extremely small. Therefore, for example, a transfer circuit including a latch as described in Patent Document 4 of the prior art document can be omitted, and a simple circuit can be made. Wiring structure. In addition, in a display device DSP1 using an array substrate 200 including an transistor using an oxide semiconductor such as IGZO as a channel layer, the leakage current of the transistor is small, so that the voltage can be maintained after the liquid crystal driving voltage is applied to the pixel electrode 29. The transmittance of the liquid crystal layer 300 can be maintained.

When an oxide semiconductor such as IGZO is used for the channel layer 27, the electron mobility in the active element 28 is high. For example, it is possible to drive a voltage corresponding to a required image signal in a short time of 2 msec (msec) or less. Applied to the pixel electrode 29. For example, one frame of the double-speed drive (in the case of 120 frames per second) is about 8.3 msec. For example, 6 msec can be assigned to touch sensing.

When the common electrode 17 having a transparent electrode pattern is a constant potential, the liquid crystal driving and the touch electrode driving may not be driven in a time-sharing manner. The driving frequency of the liquid crystal and the driving frequency of the touch metal wiring can be made different. For example, when an oxide semiconductor such as IGZO is used for the active element 28 (first active element 28a, second active element 28b) of the channel layer 27, the transmittance must be maintained after the liquid crystal driving voltage is applied to the pixel electrode 29. (Or holding voltage) Unlike a transistor using a polycrystalline silicon semiconductor, it is not necessary to refresh the image (write the image signal again) in order to maintain the transmittance. As a result, the display device DSP1 using an oxide semiconductor such as IGZO can be driven with low power consumption.

Oxide semiconductor systems such as IGZO have high voltage resistance, so they can drive liquid crystals at high voltages at high speeds, and they can be used for 3D image display capable of 3D display. As described above, since the active element 28 system using an oxide semiconductor such as IGZO for the channel layer 27 has high memory, for example, even if the liquid crystal driving frequency is set to a low frequency of about 0.1 Hz to 30 Hz, it is difficult to generate flicker. (flicker) (flicker of display). Using the active element 28 with IGZO as the channel layer, by performing dot inversion driving from a low frequency and touch driving from a frequency different from that of the dot inversion driving, it is possible to achieve high power consumption with low power consumption. Picture-quality image display and high-precision touch sensing.

In addition, as described above, since the active element 28 using the oxide semiconductor for the channel layer 27 has a small leakage current, the driving voltage applied to the pixel electrode 29 can be maintained for a long time. The source wiring 31, 32, the gate wiring 9, 10, etc. of the active element 28 are formed of copper wiring having a wiring resistance smaller than that of aluminum. Further, IGZO, which can be driven for a short time, is used as the active element, thereby making it possible to fully establish a supply line. Period for performing touch sensing scanning. In other words, by applying an oxide semiconductor such as IGZO to an active device to reduce the driving time of liquid crystals and the like, in the image signal processing of the entire display screen, the time required for touch sensing is very sufficient. This makes it possible to detect a change in the electrostatic capacitance with high accuracy.

In addition, by using an oxide semiconductor such as IGZO as the channel layer 27, coupling noise under dot inversion driving and column inversion driving can be approximately eliminated. This is an active element 28 using an oxide semiconductor, and a voltage corresponding to the image signal can be applied to the pixel electrode 29 in an extremely short time (for example, 2 msec). In addition, the memorability of the pixel voltage after the application of the image signal is maintained High, no new noise is generated during the memory retention period, which can reduce the impact on touch sensing.

As the oxide semiconductor, an oxide semiconductor including two or more metal oxides among indium, gallium, zinc, tin, aluminum, germanium, antimony, bismuth, and cerium can be used.

    (Second Embodiment)    

Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.

In the second embodiment, the same components as those in the first embodiment are given the same reference numerals, and descriptions thereof are omitted or simplified.

Fig. 13 is a view partially showing a display device DSP2 according to a second embodiment of the present invention, and is a cross-sectional view taken along line D-D 'in Fig. 16.

FIG. 14 is a view partially showing a liquid crystal layer 506 and a frame portion F of the counter substrate 350 included in a display device according to a second embodiment of the present invention, and is a cross-sectional view taken along the line AA ′ in FIG. 16. .

FIG. 15 is a diagram showing a second touch sensing wiring provided on a counter substrate according to a second embodiment of the present invention, and an enlarged cross-sectional view of a portion indicated by a symbol W2 in FIG. 14.

Fig. 16 is a view showing a counter substrate provided in a display device according to a second embodiment of the present invention, and a plan view of the display device viewed from an observer side.

In FIGS. 13 to 16, illustrations of the polarizing plate, the retardation plate, and the backlight unit are omitted.

As shown in FIG. 14, the conduction of the first touch sensing wiring 1 is, for example, an example in which a flexible printed circuit board FPC is used, which is indicated by a dotted line. As a connection system of the first touch sensing wiring 1 and the flexible printed circuit board FPC, for example, an anisotropic conductive film 101 is used.

The display function layer included in the display device DSP2 of the second embodiment is a liquid crystal layer 506 which is vertically aligned, and performs liquid crystal driving using a vertical electric field called VA (Vertical Alignment).

In addition, in this embodiment, the touch sensing control unit 122 detects the first touch sensing wiring 1 and the second touch at the intersection of the first touch sensing wiring 1 and the second touch sensing wiring 2. The change in the electrostatic capacitance C2 between the sensing wires 2 is used as a touch signal.

The counter substrate 350 constituting the display device DSP2 of the second embodiment includes a transparent substrate 42 having a first surface MF and a second surface MS opposite to the first surface MF. A plurality of first touch sensing wirings 1 are provided on the second surface MS. A plurality of second touch sensing wirings 2 are provided on the first surface MF. The plurality of second touch sensing wirings 2 and the first surface MF are covered with a color filter 60. A second transparent resin layer 105 is provided on the color filter 60, and a common electrode 50 is provided on the second transparent resin layer 105.

Specifically, in FIG. 14, a light-shielding frame portion F is configured using a part of the first touch sensing wiring 1 and the second light-shielding conductive pattern F22 with the same structure as in FIG. 6. As shown in FIG. 14, a peripheral circuit 80 related to liquid crystal driving is formed in a frame portion 200F of the array substrate 200 located below the frame portion F. The peripheral circuit 80 is, for example, a TFT, a capacitor element, a resistor element, or the like that drives an active element of the array substrate 200 is disposed on a surface of a frame portion 200F of the array substrate 200. Although illustration is omitted, the second light-shielding conductive pattern F22 is finely divided so as not to generate a large parasitic capacitance. The frame portion F including the overlap portion 3 formed by the overlap of a part of the first touch sensing wiring 1 and the second light-shielding conductive pattern F22 reduces the influence of noise from the peripheral circuit 80 on the touch sensing. The conductive frame portion F reduces the influence of electrostatic noise from the outside (hand, finger, etc.) of the display device DSP2 and prevents malfunction.

As described above, the second embodiment drives the liquid crystal layer 506 by liquid crystal driving in a vertical electric field. As shown in FIGS. 13 and 14, the common electrode 50 is disposed above the pixel electrode 59. The common electrode 50 is provided closer to the counter substrate 350 than the pixel electrode 59. That is, the liquid crystal layer 506 is supported by the common electrode 50 and the pixel electrode 59. The cell gap (thickness) of the liquid crystal layer 506 is controlled by a spacer.

In this embodiment, the liquid crystal layer 506 of the display function layer can be driven by the pixel electrode lower structure shown in the first embodiment.

Specifically, the common electrode 50 can be grounded through a high resistance to a ground potential of 0 V, the source wiring can be fixed to a positive or negative polarity, and liquid crystal driving with little noise can be performed. The driving of the display function layer of the pixel electrode lower structure greatly suppresses the influence of noise on the touch sensing driving, and can reduce the power consumption related to liquid crystal driving. In addition, the grounded common electrode 50 also fulfills the task of shielding the electrical noise, which helps to improve the accuracy of touch sensing.

As in the first embodiment, the active device is formed on the array substrate 200. The channel layer of the active device is formed using an oxide semiconductor. The oxide semiconductor can be applied to an oxide semiconductor containing two or more metal oxides among gallium, indium, zinc, tin, aluminum, germanium, antimony, bismuth, and cerium. The gate insulating film can be made into a gate insulating film formed of a composite oxide containing cerium oxide. For example, as the structure of the active device, an active device (TFT) of a top gate structure shown in FIG. 10 can be used.

As shown in FIG. 16, the display device DSP2 includes a color filter 60. Pixels are formed by the first touch sensing wiring 1 and the second touch sensing wiring 2, and each pixel is provided with a red colored layer R, a green colored layer G, and a blue colored layer B constituting the color filter 60. That is, the first touch sensing wiring 1 and the second touch sensing wiring 2 function as a black matrix that separates the red colored layer R, the green colored layer G, and the blue colored layer B. In the second embodiment, the red colored layer R, the green colored layer G, and the blue colored layer B are arranged in a striped pattern.

The first touch-sensing wiring 1 and the second touch-sensing wiring 2 are the same as the first embodiment, and each has a structure in which a black layer and a conductive layer are laminated. The conductive layer forming the first touch sensing wiring 1 and the second touch sensing wiring 2 is the same as the first embodiment, and has three layers of a conductive metal oxide layer, a copper alloy layer, and a conductive metal oxide layer. structure.

In particular, as shown in FIG. 15, the second touch sensing wiring 2 has a structure in which a second black layer 76 and a second conductive layer 75 are sequentially laminated in the observation direction OB. The second black layer 76 has the same structure as the second black layer of the first embodiment. The second conductive layer 75 has the same structure as the second conductive layer of the first embodiment.

In FIG. 13, the liquid crystal layer 506 held by the pixel electrode 59 and the common electrode 50 is controlled by a liquid crystal driving voltage applied between the pixel electrode 59 and the common electrode 50. The liquid crystal of the liquid crystal layer 506 is preferably a liquid crystal having a negative dielectric anisotropy, but a liquid crystal having a positive dielectric anisotropy may be used.

    (Third Embodiment)    

Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.

In the third embodiment, the same components as those in the first and second embodiments are given the same reference numerals, and descriptions thereof are omitted or simplified.

Fig. 17 is a sectional view partially showing a display device DSP3 according to a third embodiment of the present invention.

18 is a cross-sectional view partially showing a frame portion F of a counter substrate 550 included in a display device DSP3 according to a third embodiment of the present invention.

FIG. 19 is a diagram showing a counter substrate 550 included in a display device DSP3 according to a third embodiment of the present invention, and a plan view of the display device DSP3 viewed from an observer.

Fig. 20 is a sectional view partially showing an array substrate 600 according to a third embodiment of the present invention.

FIG. 21 is a view partially showing a pixel electrode 88 constituting an array substrate 600 according to a third embodiment of the present invention, and is an enlarged cross-sectional view of a portion indicated by a symbol W3 in FIG. 20.

Fig. 22 is a sectional view partially showing a gate electrode constituting an array substrate 600 according to a third embodiment of the present invention.

The counter substrate 550 constituting the display device DSP3 of the third embodiment includes a transparent substrate 44 having a first surface MF and a second surface MS opposite to the first surface MF. No touch sensing wiring is provided on the second MS. In the first surface MF, a plurality of first touch sensing wirings 1 and a plurality of second touch sensing wirings 2 are sequentially formed in the observation direction OB (the direction opposite to the Z direction). That is, the second touch sensing wiring 2 is located between the first touch sensing wiring 1 and the array substrate 600. The plurality of second touch sensing wirings 2 and the first surface MF are covered with a second transparent resin layer 105.

An insulating layer I (touch wiring insulation layer) is provided between the plurality of first touch sensing wirings 1 and the plurality of second touch sensing wirings 2, and the first touch sensing wiring 1 and the second touch The sensing wirings 2 are electrically insulated from each other by an insulating layer I.

In the structure shown in FIG. 17, the first transparent resin layer 108 and the second transparent resin layer 105 are bonded together.

As shown in FIG. 18, a peripheral circuit 80 related to driving of the organic EL layer (light emission of the organic EL layer) is formed in the frame portion 600F of the array substrate 600 located below the frame portion F. The peripheral circuit 80 is, for example, a TFT, a capacitor element, a resistor element, or the like that drives an active element of the array substrate 600 is disposed on a surface of a frame portion 600F of the array substrate 600. The electrical noise generated in the peripheral circuit 80 is cut off by the frame portion F, which can reduce the influence on the first touch sensing wiring 1 of the detection electrode. The cell gap (thickness) of the display device is controlled by the conductive particles 102 of the spacer. The conductive particles 102 may be metal spheres, and conductive particles coated with an inorganic oxide and a metal using a resin as a core can be applied. Alternatively, an anisotropic conductive film may be used. A connection terminal 107 is provided on the surface of the frame portion 600F of the array substrate 600, and the conductive particles 102 are sandwiched between the connection terminal 107 and the first touch sensing wiring 1. Thereby, the first touch sensing wiring 1 is connected to the touch sensing control unit 122 through the connection terminal 107 of the array substrate 600.

The first touch sensing wiring 1 and the second touch sensing wiring 2 are orthogonal in a plan view. For example, the first touch sensing wiring 1 can be used as a touch detection electrode, and the second touch sensing wiring 2 can be used as a touch driving electrode. The touch sensing control unit 122 detects the distance between the first touch sensing wiring 1 and the second touch sensing wiring 2 at the intersection of the first touch sensing wiring 1 and the second touch sensing wiring 2. The change in the electrostatic capacitance C3 is used as a touch signal.

In addition, the roles of the first touch sensing wiring 1 and the roles of the second touch sensing wiring 2 may be reversed. Specifically, the first touch sensing wiring 1 can be used as a touch driving electrode, and the second touch sensing wiring 2 can be used as a touch detection electrode.

As the structure of each of the first touch sensing wiring 1 and the second touch sensing wiring 2, the same structure as the cross-sectional structure shown in FIG. 8 described in the first embodiment can be adopted. The first touch sensing wiring 1 has a structure in which a first black layer 16 and a conductive layer 15 are sequentially stacked. The structure of the first conductive layer 15 is, for example, a three-layer structure in which a copper alloy layer or a silver alloy layer capable of forming the metal layer 20 is supported by the first conductive metal oxide layer 21 and the second conductive metal oxide layer 22. The first touch sensing wiring 1 and the second touch sensing wiring 2 which are orthogonally arranged in a lattice shape also serve as a black matrix that improves display contrast.

    (Structure of array substrate 600)    

Next, the structure of the array substrate 600 constituting the display device DSP3 will be described.

As the substrate 45 of the array substrate 600, it is not necessary to use a transparent substrate. For example, as the substrate applicable to the array substrate 600, glass substrates, ceramic substrates, quartz substrates, sapphire substrates, silicon, silicon carbide, and silicon germanium can be cited. Such as semiconductor substrates, or plastic substrates.

In the array substrate 600, a fourth insulating layer 14, an active element 68 formed on the fourth insulating layer 14, a third insulating layer 13 formed so as to cover the fourth insulating layer 14 and the active element 68, and the active layer A gate electrode 95 formed on the third insulating layer 13 so that the channel layer 58 of the element 68 faces each other, a second insulating layer 12 formed so as to cover the third insulating layer 13 and the gate electrode 95, and formed on The planarizing layer 96 on the second insulating layer 12 is sequentially laminated on the substrate 45.

In the planarization layer 96, a contact hole 93 is formed at a position of the active element 68 corresponding to the drain electrode 56. A bank 94 is formed on the planarization layer 96 at a position corresponding to the channel layer 58. In a cross-section, in a region between the banks 94 adjacent to each other, that is, a region surrounded by the banks 94 in a plan view, to cover the upper surface of the planarization layer 96, the inside of the contact hole 93, and the drain electrode The 56 method forms the lower electrode 88 (pixel electrode). The lower electrode 88 need not be formed on the bank 94.

In addition, a hole injection layer 91 is formed so as to cover the lower electrode 88, the bank 94, and the planarization layer 96. On the hole injection layer 91, a light emitting layer 92, an upper electrode 87, and a packaging layer 109 are sequentially laminated.

As described later, the lower electrode 88 has a structure in which a silver or silver alloy layer is held by a conductive metal oxide layer.

As the material of the bank 94, organic resins such as acrylic resin, polyimide resin, and phenolic resin can be used. Further, inorganic materials such as silicon oxide and silicon oxynitride can be laminated on the dam 94.

As a material of the planarization layer 96, an acrylic resin, a polyimide resin, a benzocyclobutene resin, a polyimide resin, or the like can be used. Low dielectric materials (low-k materials) can also be used.

In order to improve visibility, any of the planarization layer 96, the encapsulation layer 109, or the substrate 45 may have a light scattering function. Alternatively, a light scattering layer may be formed on the substrate 45.

In FIG. 17, the reference numeral 290 denotes a light-emitting region constituted by the lower electrode 88, the hole injection layer 91, the light-emitting layer 92, and the upper electrode 87.

    (Light emitting layer 92)    

As shown in FIG. 20, the array substrate 600 includes a light emitting layer 92 (organic EL layer) that is a display functional layer. The light-emitting layer 92 is subjected to recombination of holes injected from the anode (for example, the upper electrode) and electrons injected from the cathode (for example, the lower electrode and the pixel electrode) when an electric field is applied between a pair of electrodes. A display functional layer that excites and emits light.

The light-emitting layer 92 contains at least a material (light-emitting material) having a light-emitting property, and preferably contains a material having an electron-transporting property. The light emitting layer 92 is a layer formed between the anode and the cathode. When the hole injection layer 91 is formed on the lower electrode 88 (anode), the light emitting layer 92 is formed between the hole injection layer 91 and the upper electrode 87 (cathode). Luminescent layer 92. When a hole transporting layer is formed on the anode, a light emitting layer 92 is formed between the hole transporting layer and the cathode. The roles of the upper electrode 87 and the lower electrode 88 can be reversed.

The film thickness of the light-emitting layer 92 may be any film thickness as long as the effects of the present invention are not significantly impaired, but it is preferable that the film thickness is large because it is difficult to cause defects in the film. On the other hand, when the film thickness is small, the driving voltage is low, which is preferable. Therefore, the film thickness of the light emitting layer 92 is preferably 3 nm or more, and more preferably 5 nm or more. On the other hand, it is generally preferably 200 nm or less, and more preferably 100 nm or less.

The material of the light emitting layer 92 is not particularly limited as long as it emits light at a desired emission wavelength without impairing the effects of the present invention, and a known light emitting material can be applied. The light-emitting material may be a fluorescent light-emitting material or a phosphorescent light-emitting material. However, a material having good light-emitting efficiency is preferred. From the viewpoint of internal quantum efficiency, a phosphorescent light-emitting material is preferred.

Examples of the light-emitting material that imparts blue light include naphthalene, fluorene, fluorene, anthracene, coumarin, chrysene, p-bis (2-phenylvinyl) benzene, and derivatives thereof. Things. Examples of the light-emitting material that imparts green light include quinacridone derivatives, benzophenanthrene derivatives, aluminum complexes such as Al (C ₉ H ₆ NO) ₃ and the like.

Examples of the light-emitting material that imparts red light emission include DCM (4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) -4H-pyridine (4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) -4H-pyran)) compounds, benzopyran derivatives, rose red derivatives, benzothio (benzothioxanthene) derivatives, azabenzothione Derivatives, etc.

The structure, light emitting material, and the like of the organic EL constituting the light emitting layer 92 described above are not limited to the above materials.

As shown in FIG. 20, the light emitting layer 92 is formed on the hole injection layer 91 and is driven by a driving voltage applied between the upper electrode 87 and the lower electrode 88.

The lower electrode 88 has a structure in which a reflective layer 89 and conductive metal oxide layers 97 and 98 are laminated. In addition to the light emitting layer 92, an electron injection layer, an electron transport layer, a hole transport layer, etc. may be inserted between the upper electrode 87 and the lower electrode 88.

A high melting point metal oxide such as tungsten oxide or molybdenum oxide can be used for the hole injection layer 91. A silver alloy, an aluminum alloy, or the like having high light reflectance can be applied to the reflective layer 89. In addition, conductive metal oxides such as ITO have poor adhesion to aluminum. Interfaces such as electrodes and contact holes, for example, in the case of ITO and aluminum alloy, are liable to cause electrical connection failure. Silver and silver alloys have good adhesion to conductive metal oxides such as ITO, and conductive metal oxides such as ITO are easily in ohmic contact.

As shown in FIG. 21, in this embodiment, in order to suppress the migration of silver, the lower electrode 88 has a three-layer structure in which a silver or silver alloy layer (reflection layer 89) is held by the conductive metal oxide layers 97 and 98. As the material of the conductive metal oxide layers 97 and 98, the conductive metal oxides constituting the conductive metal oxide layers 21 and 22 described in the first embodiment can be used.

When a silver alloy layer is applied to a light-reflective pixel electrode (lower electrode), the film thickness of the silver alloy layer can be selected from a range of, for example, 100 nm to 500 nm. If necessary, the film thickness can be made thicker than 500 nm. In addition, if the film thickness of the silver alloy layer is, for example, 9 nm to 15 nm, the silver alloy layer can be used for a light-transmitting upper electrode or a counter electrode.

In addition, regarding the display functional layer, when a liquid crystal layer is used in place of the light emitting layer 92 (organic EL layer), the film thickness of the silver alloy layer is set to a film thickness of 100 nm to 500 nm, so that the silver alloy layer can be used for a pixel electrode ( Lower electrode) to realize a reflective liquid crystal display device.

In this embodiment, a composite oxide of indium oxide, gallium oxide, and antimony oxide is used as the conductive metal oxide. As a material of the silver alloy layer, a silver alloy that functions as a conductive layer can be applied. As the additive element added to silver, 1 selected from the group consisting of magnesium, calcium, titanium, molybdenum, indium, tin, zinc phthalocyanine green pigment, neodymium, nickel, antimony, bismuth, copper, and the like can be used. More than metal elements. As the silver alloy layer of this embodiment, a silver alloy containing 1.5 at% calcium relative to silver is used. In the structure in which the silver alloy is held by the conductive metal oxide described above, calcium is selectively oxidized by a heat treatment or the like in a subsequent step. The formation of such an oxide can improve the reliability of the structure in which the silver alloy layer is held by the conductive metal oxide layer. In addition, a structure in which a silver alloy layer is held by a conductive metal oxide layer is covered with a nitride such as silicon nitride or molybdenum nitride, thereby further improving reliability.

In the third embodiment, the active element 68 has the same top gate structure as the first embodiment. The channel layer of the third embodiment is also formed of an oxide semiconductor similarly to the first embodiment. In addition, from the viewpoint of the electron mobility of the transistor, it is preferable to use a first layer composed of an active matrix in which a channel layer formed by a device-reserved polycrystalline silicon semiconductor is laminated, and a channel layer formed by a device-backed oxide semiconductor. Structure of the second layer composed of the active matrix. In the structure in which the first layer and the second layer are laminated in this manner, for example, an active element (first layer) having a channel layer formed of a polycrystalline silicon semiconductor is used to implant the organic EL layer of the light emitting layer 92. Drive element for electron (electron or hole). In addition, an active element (second layer) having a channel layer formed of an oxide semiconductor is used as a switching element for selecting an active element having a channel layer formed of a polycrystalline silicon semiconductor. As the power supply line for emitting light from the organic EL layer electrically connected to the driving element, a silver alloy layer or a copper alloy layer supported by a conductive metal oxide layer can be used. As such a structure, for example, a wiring structure shown in FIG. 22 can be used. It is preferable that a silver alloy or a copper alloy with good electrical conductivity is used for wiring connected to an active element such as a power line.

In the third embodiment, a metal layer 20 of a copper alloy is used for the gate electrode 95. As shown in FIG. 22, the metal layer 20 constituting the gate electrode 95 is held by the first conductive metal oxide layer 97 and the second conductive metal oxide layer 98. The material of the gate insulating layer of the third insulating layer 13 is the same as that of the first embodiment.

    (Modification of the third embodiment)    

Moreover, in the said embodiment, the structure using the organic electroluminescent layer (organic EL) as the light emitting layer 92 was demonstrated. The light emitting layer 92 may be an inorganic light emitting diode layer. The light emitting layer 92 may have a structure in which inorganic LED wafers are arranged in a matrix. In this case, each of the micro LED chips emitting red light, green light, and blue light can be mounted on the array substrate 200. As a method of mounting the LED wafer on the array substrate 200, a face-down mounting can be performed.

When the light-emitting layer 92 is composed of an inorganic LED, a blue light-emitting diode or a blue-violet light-emitting diode as the light-emitting layer 92 is disposed on the array substrate 200 (substrate 45). After the nitride semiconductor layer and the upper electrode are formed, a green phosphor is laminated on a green pixel, and a red phosphor is laminated on a red-emitting pixel. Accordingly, an inorganic LED can be easily formed on the array substrate 200. When such a phosphor is used, green light emission and red light emission can be obtained from a green phosphor and a red phosphor, respectively, by using excitation caused by blue light from a blue-violet light-emitting diode.

Alternatively, an ultraviolet light emitting diode as the light emitting layer 92 may be disposed on the array substrate 200 (substrate 45). In this case, after forming a nitride semiconductor layer and an upper electrode, a blue phosphor is laminated on a blue pixel, a green phosphor is laminated on a green pixel, and a red phosphor is laminated on a red pixel. Accordingly, an inorganic LED can be easily formed on the array substrate 200. When such a phosphor is used, for example, a green pixel, a red pixel, or a blue pixel can be formed by a simple method such as a printing method. These pixels are desirably adjusted in size from the viewpoint of the luminous efficiency and color balance of each color.

For example, the display device of the embodiment described above can be used in various applications. Examples of the electronic device to which the display device of the above embodiment can be applied include a mobile phone, a portable game device, a portable information terminal, a personal computer, an electronic book, a video camera, a digital camera, a head-mounted display, and a navigation device. System, audio player (car audio, digital audio player, etc.), photocopier, fax machine, printer, printer multifunction machine, vending machine, automatic teller machine (ATM), personal authentication device, optical communication device, etc. . Each of the above embodiments can be used in any combination.

The preferred embodiments of the present invention have been described above, but the above description is an example of the present invention, and it should be understood that they should not be used to limit the present invention. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the present invention. Therefore, the present invention should not be regarded as limited by the foregoing description, but is limited by the scope of patent application.

Claims (20)

    A display device includes: a display functional layer; an array substrate driving the display functional layer; a display device substrate including: a transparent substrate having a first surface opposite to the array substrate and a first surface opposite to the first surface; 2 faces; a first sensing pattern having a structure in which a first black layer and a first conductive layer are sequentially laminated in an observation direction from the second face toward the first face, and are included on the second face to A plurality of first touch sensing wirings extending parallel to each other in an array in the first direction; the second sensing pattern has a structure in which a second black layer and a second conductive layer are sequentially laminated in the observation direction And includes a plurality of first parallel sensing lines extending between the first touch sensing wiring and the array substrate and arranged in parallel in a second direction orthogonal to the first direction in a plan view. 2 touch sensing wiring; the first light-shielding conductive pattern is formed of the same material as the first touch sensing wiring, and is arranged at the same position as the first touch sensing wiring in a cross-section, and Located outside the first sensing pattern; the second light-shielding conductive pattern, The second touch-sensing wiring is formed of the same material, and is disposed at the same position as the second touch-sensing wiring in a cross-section, and is located outside the second sensing pattern; a display portion, and the The display functional layer is opposed to each other; and a light-shielding frame portion surrounds the display portion and is constituted by using a part of the first sensing pattern, the first light-shielding conductive pattern, and the second light-shielding conductive pattern, and a control unit, Detecting a change in electrostatic capacitance between the first touch sensing wiring and the second touch sensing wiring to perform touch sensing.         The display device as claimed in claim 1, wherein the first touch sensing wiring and the second touch sensing wiring are formed on the second surface, and the first touch sensing wiring and the second touch are formed on the second surface. An insulating layer is provided between the sensing wirings, and the first touch sensing wiring and the second touch sensing wiring are electrically insulated from each other.         The display device according to claim 1, wherein the first touch sensing wiring system is formed on the second surface, and the second touch sensing wiring system is formed on the first surface.         The display device according to claim 1, wherein the first touch sensing wiring and the second touch sensing wiring are sequentially formed on the first surface and in the viewing direction. An insulating layer is provided between the test wiring and the second touch sensing wiring, and the first touch sensing wiring and the second touch sensing wiring are electrically insulated from each other.         The display device according to claim 1 has a frame body surrounding the array substrate and the display device substrate, and the first light-shielding conductive pattern is grounded to the frame body.         The display device according to claim 1, wherein the second light-shielding conductive pattern has a plurality of light-shielding conductive portions divided by a slit.         The display device according to claim 1, wherein the array substrate includes an active element having a channel layer which is in contact with the gate insulating layer and is formed of an oxide semiconductor, and drives the display functional layer.         The display device according to claim 7, wherein the oxide semiconductor includes one or more metal oxides selected from the group consisting of gallium, indium, zinc, tin, aluminum, germanium, and cerium, and at least A metal oxide of either antimony or bismuth.         The display device as claimed in claim 7, wherein the gate insulating layer is formed of a composite oxide containing cerium oxide.         The display device according to claim 7, wherein at least the gate wiring among the plurality of wirings electrically connected to the active device has a three-layer structure in which a copper alloy layer is held by a conductive metal oxide layer.         The display device according to claim 1, wherein the array substrate includes an upper electrode and a lower electrode that support the display function layer, the display function layer is a light emitting diode layer, and a driving voltage applied between the upper electrode and the lower electrode is used. Glow.         The display device according to claim 1, wherein the array substrate includes an upper electrode and a lower electrode that support the display functional layer, and the display functional layer is an organic electroluminescence layer, and a drive applied between the upper electrode and the lower electrode is used. The voltage glows.         The display device according to claim 11 or 12, wherein at least one of the upper electrode and the lower electrode has a structure in which a silver alloy layer is held by a conductive metal oxide layer.         The display device according to claim 1, wherein the display functional layer is a liquid crystal layer, the array substrate is provided with a common electrode and a pixel electrode that support the liquid crystal layer, and the liquid crystal layer is driven by a potential difference between the common electrode and the pixel electrode.         The display device as claimed in claim 14, wherein the common electrode is disposed closer to the display device substrate than the pixel electrode in a cross-sectional view.         A display device substrate includes a transparent substrate having a first surface and a second surface opposite to the first surface; and a first sensing pattern formed on any of the first surface and the second surface. Has a structure in which a first black layer and a first conductive layer are sequentially laminated in a viewing direction from the second surface toward the first surface, and is also included on the second surface so as to be aligned in the first direction A plurality of first touch sensing wirings extending in parallel to each other; a second sensing pattern is formed on any of the first surface and the second surface, and has a second black layer sequentially stacked in the observation direction The structure of the layer and the second conductive layer also includes a plurality of second touch sensing wirings extending parallel to each other so as to be arranged in a second direction orthogonal to the first direction in a plan view; the first light-shielding conductive The pattern is formed of the same material as the first touch-sensing wiring, and is arranged at the same position as the first touch-sensing wiring in a cross-section, and is located outside the first sensing pattern; the second light-shielding conductive The pattern is formed of the same material as the second touch sensing wiring, and is arranged on the second touch sensing wiring in a sectional view. The same position of the measurement wiring is located outside the second sensing pattern; and the light-shielding frame portion is formed by a part of the first sensing pattern, the first light-shielding conductive pattern, and the second light-shielding conductive pattern.         The display device substrate according to claim 16, wherein the transparent substrate has short sides and long sides in a plan view, and the first light-shielding conductive pattern is disposed parallel to the long sides.         The display device substrate according to claim 16, wherein the second light-shielding conductive pattern has a plurality of slits parallel to the first touch-sensing wiring, and the plurality of first touch-sensing wirings and the first touch-sensing wiring are formed in a plan view. The overlapping portion where the plurality of slits overlap, and the overlapping portion constitutes the frame portion.         The display device substrate according to claim 16, wherein the first conductive layer and the second conductive layer have at least a three-layer structure in which a copper alloy layer is held by a conductive metal oxide layer.         For example, the display device substrate of claim 16 includes a plurality of pixels separated by the plurality of first touch sensing wirings and the plurality of second touch sensing wirings in a plan view, the plurality of pixels having Color filters.