TW201802915A - Substrate processing apparatus, substrate processing method, and manufacturing method of substrate - Google Patents

Abstract

A substrate processing apparatus according to an embodiment includes a substrate support portion that supports the substrate, a rotating portion that rotates the substrate, a processing liquid supply portion that supplies a processing liquid to a surface of the substrate, and a control portion that performs the rotation while rotating the substrate. In the substrate processing in which the processing liquid is supplied, the processing is continued and the liquid discharging processing is performed to change the discharge speed of the processing liquid discharged from the substrate at a predetermined time point set in advance.

Description

Substrate processing device, substrate processing method, and substrate manufacturing method

FIELD OF THE INVENTION The present invention relates to a substrate processing apparatus, a substrate processing method, and a substrate manufacturing method.

BACKGROUND OF THE INVENTION In the manufacturing process of semiconductors or liquid crystal panels, a substrate processing apparatus is used to supply the surface of a substrate such as a wafer or a liquid crystal substrate with a processing liquid to process the surface of the substrate (for example, refer to Japanese Patent Laid-Open No. H09-134872). . For example, for the treatment liquid, a photoresist peeling liquid, a cleaning liquid, or the like is supplied to perform an etching treatment or a cleaning treatment. As such substrate processing, a rotary substrate processing is known, that is, a substrate is rotated, a processing liquid is supplied to the substrate surface from a nozzle provided facing the substrate surface, and the processing liquid is spread on the substrate surface by a rotating centrifugal force. In such substrate processing, the processing liquid supplied to the substrate is discharged at a speed corresponding to the processing conditions, and a new processing liquid is sequentially supplied.

Generally, various processing conditions regarding the rotation of a substrate or the supply of a processing liquid are conditions set to ensure uniformity of substrate processing.

In such a rotary substrate processing, the processing liquid stays on the substrate for a long time depending on the processing conditions, so the processing liquid precipitates, and for example, the processing liquid on the substrate may precipitate particles. As soon as precipitation occurs in the processing solution, processing functions such as an etching rate, a photoresist removal function, and a cleaning ability are reduced. For this reason, a substrate processing apparatus, a substrate processing method, and a substrate manufacturing method that can secure a high processing function are desired.

SUMMARY OF THE INVENTION A substrate processing apparatus according to one aspect of the present invention includes a substrate support portion that supports a substrate; a rotating portion that rotates the substrate; a processing liquid supply portion that supplies a processing liquid to a surface of the substrate; Among the substrate processes in which the substrate is supplied while the substrate is being rotated, the substrate is continuously processed, and at a predetermined time point set in advance, a drainage process is performed in which the drain rate of the substrate from the substrate is discharged.

A substrate processing method according to another aspect of the present invention includes the following steps: rotating a substrate; supplying a processing liquid to a surface of the substrate; heating the substrate by a heater disposed facing the substrate; and during substrate processing, A predetermined time is set in advance, and one or more processes are continuously performed to increase the rotation speed of the rotation, increase the supply amount of the processing liquid, and reduce the gap between the substrate and the heater. This changes the discharge speed of the aforementioned processing liquid from the substrate.

A method for manufacturing a substrate according to another aspect of the present invention includes the following steps: rotating the substrate; supplying a processing liquid to the surface of the substrate; heating the substrate by a heater disposed facing the substrate; and during substrate processing, At a predetermined time point set in advance, one or more processes of continuously processing and increasing the rotation speed of the rotation, increasing the supply amount of the processing liquid, and reducing the gap between the substrate and the heater, Thereby, the discharge speed of the processing liquid from the substrate is changed.

According to the embodiment, a substrate processing apparatus, a substrate processing method, and a substrate manufacturing method capable of ensuring a high processing function can be provided. Other objects and effects of the present invention can be clearly presented through the following description or through the embodiments of the invention. In addition, the various objects and effects of the present invention can be achieved through the composition and combination disclosed in the scope of the attached patent application.

Detailed Description of the Preferred Embodiment [First Embodiment] Hereinafter, a substrate processing apparatus and a substrate processing method according to a first embodiment of the present invention will be described with reference to Figs. 1 to 3. FIG. 1 is an explanatory diagram showing the structure of a substrate processing apparatus according to the first embodiment, and FIG. 2 is a processing flowchart of the substrate processing apparatus. FIG. 3 is an explanatory diagram showing a change in position of the heater, and FIG. 4 is a line diagram showing a sequence of rotation speed. In each figure, the structure is appropriately enlarged, reduced, or omitted for illustration.

As shown in FIGS. 1 and 2, the substrate processing apparatus 1 includes a processing chamber 10 constituting a processing chamber, a substrate supporting portion 20 that supports and rotates the substrate W, and a heater 30 that heats the substrate W and the processing liquid L1. A processing liquid supply unit 40 that supplies a processing liquid to the substrate, a receiving cup 50 that receives the discharged liquid, and a control unit 60 that controls the operation of each unit.

The substrate support section 20 includes a support table 21 that supports a substrate, and a rotation mechanism 22 that is a rotation section that rotates the support table 21. The support table 21 is provided in the processing chamber 10 and has a horizontal mounting surface 21a on the upper surface. On the periphery of the mounting surface 21a of the support table 21, for example, a plurality of fixing substrates 23 for fixing and detaching the substrates are provided. The substrate support portion 20 can place a substrate on a mounting surface 21 a of the support table 21 and a substrate W such as a wafer, a liquid crystal substrate, and the like that can be separated from the substrate and supported in a horizontal state.

The rotation mechanism 22 is connected to the control unit 60 and drives the support table 21 under the control of the control unit 60 so as to rotate at a desired rotation speed on a predetermined horizontal surface. Therefore, the substrate support portion 20 is configured to adjust the rotation speed of the support table 21.

The heater 30 includes a hot plate 31 and a lifting mechanism 32 that moves the hot plate 31 up and down. The hot plate 31 has a heating surface 31a larger than the surface Wa of the substrate W. The hot plate 31 is supported by the elevating mechanism 31 so that the heating surface 31 a is arranged to face the surface Wa of the substrate W. The hot plate 31 is connected to the control unit 60 and is configured to be adjustable in temperature. The area of the main surface of the hot plate 31 is larger than that of the substrate W, and covers the substrate W in a plan view and has a circular shape.

The elevating mechanism 32 is connected to the control unit 60, and moves the hot plate 31 in the up-down direction under the control of the control unit 60, and stops at a predetermined position. That is, the heater 30 is configured to adjust the vertical position of the hot plate 31. Therefore, it is comprised so that the gap dimension G formed between the heating surface 31a and the surface Wa of the board | substrate W can be adjusted. In this embodiment, as shown in FIG. 3, the hot plate 31 can be moved to a first position positioned at, for example, a gap size G1 and a second position at a gap size G2 smaller than G1.

For example, the first position refers to a retreat position where the surface Wa on the upper surface of the substrate W and the heating surface 31 a are spaced a predetermined distance apart. The second position refers to a processing position where, for example, at least a part of the gap between the heating surface 31a and the surface Wa of the substrate W is filled with the processing liquid L1, in other words, at least a part of the processing liquid L1 is brought into contact with the heating surface 31a.

The processing liquid supply unit 40 includes a nozzle 41 arranged to face above the support table 21, and a supply mechanism 42 connected to the nozzle. The supply mechanism 42 includes, for example, a storage tank 43 that stores the processing liquid L1 transferred to the nozzle 41, a pump 44 that is a power source for pressure-feeding the processing liquid L1, a pipe that forms a flow path 45 that connects the storage tank 43 and the nozzle 41, and The on-off valve 46 that closes the flow path 45.

In addition, in the present embodiment, the treatment liquid L1 is, for example, a chemical solution such as an aqueous phosphoric acid solution, sulfuric acid, or a mixed solution thereof.

The nozzle 41 is provided through the inside of the hot plate 31. For example, the tip of the nozzle 41 is arranged toward the center of the heating surface 31 a and faces the opening, and opens toward the upper portion of the central portion of the support table 21. For this reason, the nozzle 41 is comprised so that it may move up and down as the hot plate 31 moves.

The pump 44 or the shut-off valve 46 provided in the supply mechanism 42 is connected to the control unit 60 and is configured to control the operation of the supply mechanism 42. Therefore, the processing liquid supply unit 40 is configured by the control unit 60 to adjust the supply timing or the supply amount of the processing liquid.

The cup 50 is formed into a cylindrical shape, for example. The cup 50 is provided to cover the periphery and the bottom of the substrate W, and receives the discharged liquid flowing down from the substrate W. The cup 50 is provided with a discharge pipe 51 that discharges the accumulated discharge liquid to the outside.

The control unit 60 includes a processor that controls various driving units of the substrate processing apparatus 1, a memory that stores various information, and a driving circuit that drives each element.

The control unit 60 is a rotation mechanism 22, a lifting mechanism 32, and a supply mechanism 42 connected to the substrate processing apparatus 1. The processor controls the operations of various parts in order to realize various functions of the substrate processing apparatus based on information such as various control programs and operating conditions. The processor drives the supply mechanism 42 such as the rotary mechanism 22, the lifting mechanism 32, the pump 44 or the on-off valve 46 in accordance with various operating conditions or control programs.

That is, when the processor executes a control process in accordance with a control program, the control unit 60 with the processor as a central part controls a substrate rotation operation, a heater elevation operation, and a processing liquid supply operation. Therefore, the control unit 60 functions as a rotation speed adjustment unit that adjusts the rotation speed, a gap adjustment unit that adjusts the gap, and a liquid amount adjustment unit that adjusts the supply amount of the processing liquid. In this embodiment, the control unit 60 functions as a liquid discharge unit that performs liquid discharge processing, that is, by adjusting the rotation speed, the flow rate of the processing liquid L1 when the processing liquid L1 is discharged from the substrate W is increased, that is, To increase the drainage rate. The substrate processing of the present invention includes: a normal processing, a processing for obtaining a uniformity of a processing rate in a central portion and a peripheral portion of the substrate W, and a liquid discharge processing. In addition, the liquid discharge processing of the present invention refers to a process in which substrate processing is continuously performed and the liquid discharge rate is increased to be faster than in the normal processing during the substrate processing.

Hereinafter, a substrate processing method and a substrate manufacturing method according to this embodiment will be described with reference to FIGS. 1 to 4. Here, as an example, the substrate processing method and the substrate manufacturing method will be described by taking an etching process in which a phosphoric acid aqueous solution as a processing liquid L1 is supplied to a nitride film formed on the substrate W and processed. In addition, the precipitated particles are described using silica. The substrate processing of the present invention means a chemical solution cleaning process among a series of processes of the substrate W (chemical solution washing process, rinse process, and drying process).

In the standby state, the hot plate 31 is retracted to the first position, and the heating surface 31 a is sufficiently separated from the support table 21. For example, the gap size G1 in the standby state is set to 150 mm or more. In the standby state, the rotation of the support table 21 is stopped. First, the control unit 60 mounts the substrate W (ST2) to be processed as soon as the substrate processing instruction (ST1) is detected. Specifically, the substrate W to be processed is carried into the processing chamber 10 and placed on the support table 21. Next, the fixing portion 23 is driven to fix the substrate W. Next, the control unit 60 drives the rotation mechanism 22 to rotate the support table 21 at a predetermined first rotation speed R1 (ST3). The first rotation speed R1 is a rotation speed capable of ensuring uniformity of substrate processing, and is set to, for example, 300 rpm or less. In this embodiment, R1 = 150 rpm.

The control unit 60 drives the heater 30 and sets the temperature of the hot plate 31 to a predetermined temperature. The control unit 60 drives the lifting mechanism 32 to lower the hot plate 31 and attaches it to a predetermined position (ST4). Specifically, the hot plate 31 is lowered to the second position. The second position is, for example, a processing position that becomes the gap size G2. The gap size G2 is, for example, a size that fills at least a part of the gap G with the processing liquid L1 supplied to the substrate W. For example, in the present embodiment, the gap size G2 is set to 1.5 mm.

In addition, the control unit 60 drives the supply mechanism 42 to supply the processing liquid L1 from the nozzle 41 onto the substrate W at a predetermined first flow rate Q1 (ST5). The first flow rate Q1 is a flow rate at which uniformity of the processing of the substrate W can be obtained. For example, in the present embodiment, Q1 = 0.55 l / m.

Further, the control unit 60 increases the flow rate V when the processing liquid L1 is discharged from the substrate W, that is, the liquid discharge speed V at a predetermined timing, and performs a liquid discharge process that promotes liquid discharge while performing substrate processing during the substrate processing (ST6). That is, after the processing performed at the first rotation speed R1, the processing performed at the second rotation speed R2 is performed, so that the liquid discharge processing can be performed while the processing is continued. Specifically, by periodically increasing the rotation speed to the second rotation speed R2, a situation in which the centrifugal force becomes large is used to increase the discharge speed V of the processing liquid L1 from the substrate W. For example, the second rotation speed R2 is greater than the first rotation speed R1 and is set in a range of 300 rpm to 600 rpm.

As shown in FIG. 4, the timing of the liquid discharging process is, for example, the timing of starting the liquid discharging process is set based on the time during which the deposition of the processing liquid L1 occurs during the substrate processing time, that is, the time when the precipitation of fine particles occurs. For example, the liquid drainage treatment is performed at a certain time shorter than the time when the particles start to precipitate. As shown in FIG. 4, the time for performing the liquid-discharging treatment at the second rotation speed R2 is set shorter than the time for performing substrate processing (normal processing) at the first rotation speed R1. In addition, the microparticles are reaction products, processing target films, or the like deposited on the processing liquid L1 remaining on the substrate W while the substrate W is being processed. In the processing solution existing on the substrate W, a reaction product or a film to be processed is dissolved therein after the processing is started, but as the processing time of the substrate W is increased, a reaction product or a film to be processed is already dissolved therein and is present in The processing liquid L1 on the substrate W does not completely dissolve the reaction product or the film to be processed, and precipitates fine particles. Taking the example of fine particles, the following can be exemplified. In the etching treatment by using a phosphoric acid aqueous solution, it refers to a reaction product such as silicon oxide precipitated in the processing liquid L1 on the substrate W, or in a sulfuric acid The removal of the photoresist means the residue of the processing target film such as the photoresist deposited in the processing liquid L1 on the substrate W. When the processing liquid L1 containing these particles is left on the substrate W, the reaction rate of the processing target film on the substrate W by the processing liquid L is slowed down, or the processing rate of the etching of the substrate W is slowed down. This is the cause of the deterioration of the photoresist removal performance.

In this embodiment, the drainage is performed every 30 seconds and every 5 seconds. The above processing of ST5 to ST6 is repeated until the substrate processing is completed (ST7). That is, the substrate W is processed by the processing liquid L1 of the same type of processing liquid just before the end of the substrate processing, and the liquid discharge processing is performed at a predetermined timing set in advance. When a predetermined time has elapsed from the start of processing, the control unit 60 stops the supply of the processing liquid L1 and ends the substrate processing (ST8). Secondly, the cleaning process is appropriately performed. In addition, if the number of repeated installations has been set in advance for the processing scheduled time A, the processing scheduled time A is divided by the time T for substrate processing (normal processing) and drainage processing to be a set of processing, so that it can be set in advance. For processing menu.

In addition, when the substrate processing (normal processing) performed at the first rotation speed R1 and the liquid drainage processing performed at the second rotation speed R2 are set to N times the processing time T of one group, the predetermined processing time is exceeded. At time A, that is, when there is a remainder when the processing scheduled time A is divided by the time T, the substrate processing time (normal processing) of the Nth group is adjusted, and the draining processing time of the Nth group is unchanged. For example, the normal processing and the drainage processing are repeated twice (two groups), and the substrate processing time of the third group is set to 5 seconds, and the drainage processing time is set to 5 seconds. In this way, the time for performing each of the multiple drainage operations is fixed and the same time.

In this embodiment, normal processing is performed from the start of processing (t1), and substrate processing is performed at the first rotation speed R1, for example, for 25 seconds. After the treatment at the first rotation speed R1, the drainage treatment is started (t2), and the treatment is performed at the second rotation speed R2. After 5 seconds, the drainage treatment at the second rotation speed R2 is completed (t3). This substrate processing (normal processing) and liquid discharge processing are regarded as one group, and a multiple array is repeated until the processing is completed (t4). When the process is repeated, the liquid is decelerated from the second rotation speed R2 to the first rotation speed R1 after the end of the drainage process, and the substrate processing (normal processing) performed at the first rotation speed R1 is performed again. In this embodiment, as in As shown in Fig. 4, the liquid discharging process is performed immediately before the processing is completed. In addition, in the substrate processing of this embodiment, the processing liquid is continuously supplied. That is, during the liquid discharging processing, the processing liquid L1 is continuously supplied. The supply is continued. By this, the liquid discharge processing can be performed while the substrate processing is continued.

According to the substrate processing apparatus, substrate processing method, and substrate manufacturing method of this embodiment, the following effects can be obtained. That is, by changing the rotation speed during the processing of the substrate, for example, by periodically increasing the rotation speed, the discharge speed of the processing liquid L1 from the substrate W can be increased. Therefore, regular drainage can be promoted to promote replacement of a new processing fluid. For this reason, in the processing liquid L1 on the substrate W, for example, the accumulation of the processing time of the substrate W and the precipitation of fine particles caused when the reaction product of the processing target film on the substrate W is dissolved in the processing liquid L1 can be prevented. Therefore, it is possible to prevent a reduction in the processing rate due to the precipitation of particles, and to prevent a reduction in the processing efficiency. In addition, the time for performing the liquid discharge processing at the second rotation speed R2 is set shorter than the time for substrate processing (normal processing) at the first rotation speed R1. Thereby, the microparticles can be discharged periodically at the liquid discharge treatment at the second rotation speed, and uniform treatment can be obtained while maintaining the processing rate at the first rotation speed R1.

In the present embodiment, the rotation mechanism 22 for controlling substrate processing is used to periodically increase the rotation speed to realize liquid discharge processing. Therefore, it is possible to use existing equipment without introducing a new mechanism to improve processing efficiency.

Furthermore, since the liquid drainage promotion processing is performed immediately before the substrate processing is completed, for example, in the next step, a cleaning treatment with a washing water having a temperature lower than that of the processing liquid L1 is performed, and particles such as a lowered temperature may be easily precipitated. It can promote the replacement of the processing liquid, and can effectively prevent the reduction of the processing efficiency. [Second Embodiment] A substrate processing apparatus, a substrate processing method, and a substrate manufacturing method according to a second embodiment of the present invention will be described below with reference to Figs. 5 and 6. FIG. 5 is a line chart showing the sequence of the positions of the heaters in this embodiment, and FIG. 6 is an explanatory view showing the changes in the positions of the heaters. In addition, in the present embodiment, the liquid discharge process is a process of changing the gap G between the substrate W and the hot plate 31, but other device configurations and processing procedures are the same as those of the first embodiment described above, and therefore common descriptions are omitted.

In the present embodiment, the control unit 60 drives the lifting mechanism 32 for the liquid discharge processing during the substrate processing, thereby periodically lowering and disposing the hot plate 31 from the second position in which the hot plate 31 is positioned as the processing position. In position 3. Specifically, the hot plate 31 is positioned at the third position once every 30 seconds and 5 seconds to perform a liquid drainage process.

That is, for example, as shown in FIG. 5, the hot plate 31 is lowered from the initial first position to be positioned at the second position, a processing liquid is supplied, and processing is started (t1). Next, in a normal process, after performing substrate processing with the hot plate 31 in the second position for 25 seconds (t2), the hot plate 31 is further lowered from the second position and moved to the third position (t2) . Then, the liquid discharging process is performed for 5 seconds (t3) with the hot plate 31 disposed at the third position. This substrate processing (normal processing) and liquid discharge processing are grouped, and the array is repeated until the processing is completed (t4). In the case of repetition, after the liquid discharge processing is completed, the hot plate 31 is raised from the third position to the second position, and the processing of the substrate W is performed again in the state of being positioned at the second position. In this embodiment, the liquid discharge process is also performed just before the substrate process (t4) is completed. As shown in FIG. 5, the time for performing the substrate processing by positioning the hot plate 31 at the second position is set to be shorter than the time for performing the substrate drainage processing by positioning at the third position. In the substrate processing of this embodiment, the processing liquid is continuously supplied. That is, the treatment liquid L1 is continuously supplied between the liquid discharge processes. Thereby, the liquid discharge processing can be performed while the substrate processing is continuously performed.

As shown in FIG. 6, the third position is to contact the heating surface 31 a to at least a part of the processing liquid L1, and to make the gap G3 between the surface Wa of the substrate W and the heating surface 31 a smaller than G2 to facilitate processing from the substrate W. The discharge position of the liquid L1. The gap size G3 is set to 1.2 mm, for example. When the processor executes the control process according to the control program, the control unit 60 with the processor as the central part controls the rotation operation of the substrate, the raising and lowering operation of the heater, and the operation of supplying the processing liquid. Therefore, the control unit 60 functions as a rotation speed adjustment unit that adjusts the rotation speed, a gap adjustment unit that adjusts the gap, and a liquid amount adjustment unit that adjusts the supply amount of the processing liquid. That is, in the present embodiment, the control unit 60 functions as a liquid discharge unit that performs liquid discharge processing to increase the liquid discharge speed by adjusting the clearance.

According to the substrate processing apparatus, the substrate processing method, and the substrate manufacturing method of this embodiment, the same effects as those of the first embodiment can be obtained. That is, during the processing of the substrate, the gap G is periodically changed, for example, the gap G is periodically reduced, so that the cross-sectional area of the flow path can be reduced, the discharge speed of the processing liquid moving from the substrate can be increased, and the liquid can be discharged. Therefore, stagnation of the processing liquid on the substrate can be prevented, and replacement of a new processing liquid can be promoted. For this reason, precipitation of particles in the processing liquid on the substrate can be prevented from reducing the processing efficiency. In addition, the time for performing substrate processing (normal processing) after positioning the hot plate 31 at the second position is set to be shorter than the time for performing liquid drainage processing after positioning at the third position. Thereby, the microparticles can be periodically discharged by the liquid discharging treatment at the third position, and the uniformity can be obtained while maintaining the processing rate at the second position.

In the present embodiment, since the liquid discharging process is realized by using the lifting mechanism of the heater 30, the existing equipment can be used, and it is not necessary to introduce a new mechanism to improve the processing efficiency. Furthermore, since the liquid discharge promotion processing is performed immediately before the substrate processing is completed, for example, even if fine particles are easily deposited in the next step, for example, the replacement of the processing liquid can be promoted, which effectively prevents a reduction in processing efficiency. [Third Embodiment] Hereinafter, a substrate processing apparatus, a substrate processing method, and a substrate manufacturing method according to a third embodiment of the present invention will be described with reference to FIG. 7. FIG. 7 is a line chart showing the order of the supply amount of the processing liquid in this embodiment. In addition, in the present embodiment, the liquid discharge process is a process of periodically increasing the supply amount of the processing liquid. However, other device configurations and processing procedures are the same as those of the first embodiment, and therefore common descriptions are omitted.

In the present embodiment, the control unit 60 controls the supply mechanism 42 during substrate processing to periodically increase the supply amount of the processing liquid L1 as a liquid discharge processing. Specifically, the processing liquid L1 is supplied at a predetermined flow rate Q1 from the substrate processing, and the flow rate is periodically increased to Q2. For example, once every 30 seconds and 5 seconds, the liquid drainage process is performed.

For example, as shown in FIG. 7, the substrate processing (normal processing) for supplying the processing liquid L1 at the first flow rate Q1 at the processing start (t1) is performed for 25 seconds (t2), and the flow rate is switched to the second flow rate Q2. The steps of 5 seconds (t3) for supplying the treatment liquid L1 at the flow rate of 2 flow rate Q2 are regarded as a group, and the array is repeated until the processing of the substrate W is completed (t4). When repeating, after the completion of the drainage process, the flow rate is reduced from Q2 to Q1, and the processing liquid L1 is supplied again at the flow rate Q1, and the substrate W is processed. Then, in this embodiment, the liquid discharging process is performed immediately before the substrate processing is completed. In addition, the time for performing the liquid discharge processing for supplying the processing liquid L1 at the second flow rate Q2 is set shorter than the time for performing the substrate processing for supplying the processing liquid L1 at the first flow rate Q1. Thereby, fine particles can be periodically discharged by the liquid discharge treatment in which the treatment liquid L1 is supplied at the second flow rate Q2, and uniformity can be obtained while supplying the treatment liquid L1 at the first flow rate Q1 to maintain the processing rate.

The second flow rate Q2 is an expected flow rate that is set to be larger than Q1 and can increase the discharge speed of the processing liquid L1. For example, in this embodiment, Q1 = 0.55l / m and Q2 = 0.65l / m.

When the processor executes the control process based on the control program, the control unit 60 with the processor as the central part controls the rotation operation of the substrate, the raising and lowering operation of the heater, and the operation of supplying the processing liquid. Therefore, the control unit 60 functions as a rotation speed adjustment unit that adjusts the rotation speed, and a liquid amount adjustment unit that adjusts the supply amount of the processing liquid. That is, in the present embodiment, the control unit 60 functions as a liquid discharge unit that performs liquid discharge processing to increase the liquid discharge rate by adjusting the liquid amount of the processing liquid supply amount.

According to the substrate processing apparatus, the substrate processing method, and the substrate manufacturing method of this embodiment, the same effects as those of the first embodiment can be obtained. That is, during the processing of the substrate, the flow rate of the processing liquid L1 is periodically increased, thereby increasing the draining speed of the processing liquid L1 from the substrate W, and the draining can be regularly promoted. Therefore, stagnation of the processing liquid on the substrate can be prevented, and replacement of a new processing liquid can be promoted. For this reason, it is possible to prevent the precipitation of particles in the processing liquid on the substrate and reduce the processing efficiency. The time for performing the liquid discharging process for supplying the processing liquid L1 at the second flow rate Q2 is set to be shorter than the time for performing the substrate processing (normal processing) for supplying the processing liquid L1 at the first flow rate Q1.

In this embodiment, it is configured to use the supply mechanism of the processing liquid to realize the liquid discharge processing, so that the existing equipment can be used, and it is not necessary to introduce a new mechanism to improve the processing efficiency. Furthermore, since the liquid drainage promotion processing is performed immediately before the substrate processing is completed, for example, even if particles are easily precipitated in the next step, the processing liquid can be replaced, which effectively prevents a reduction in processing efficiency. In the substrate processing of this embodiment, the processing liquid is continuously supplied. That is, the processing liquid L1 is continuously supplied between the liquid discharge processes. Thereby, the liquid discharge processing can be performed while the substrate processing is continuously performed.

In addition, the present invention is not limited to the original appearance of each of the above-mentioned embodiments, and the constituent elements can be modified and embodied at the implementation stage.

For example, a plurality of embodiments may be combined. That is, any one or more of the processes of increasing the rotation speed, increasing the flow rate of the processing liquid, and reducing the interval between the substrate and the heater at a predetermined timing can be combined in a timely manner to improve the drainage of the processing liquid from the substrate. speed.

Moreover, in the said embodiment, although the example which moved the hot plate 31 side was shown, it is not limited to this. For example, a lifting mechanism for lifting the support table 21 may be provided. When adjusting the relative distance, it may replace the lifting of the heater, or may raise and lower the substrate in addition to the lifting of the heater. In addition to the rotation of the support table 21, the hot plate 31 can also be rotated.

In addition, for example, in the above embodiment, the treatment liquid L1 is exemplified by a chemical solution such as an aqueous phosphoric acid solution, sulfuric acid, or a mixed solution thereof, but the invention is not limited thereto. For example, pure water may be supplied instead of the chemical solution to perform substrate processing for cleaning the substrate. In addition, two storage tanks 43 are connected to the nozzle 41, and a chemical liquid and pure water are stored in each of the storage tanks 43, and the supplied liquid is switched at a predetermined timing. For example, the chemical liquid is continuously supplied for substrate processing, and then the pure liquid is supplied. Washing with water is also possible.

As mentioned above, several embodiments of the present invention have been described. However, these embodiments are provided as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other forms, as long as various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments or their modifications are included in the scope or purpose of the invention, and are included in the invention described in the scope of patent application and its equivalent scope.

1‧‧‧ substrate processing device
10‧‧‧Processing Room
20‧‧‧ substrate support
21‧‧‧Support
21a‧‧‧mounting surface
22‧‧‧Rotating mechanism
23‧‧‧Fixed section
30‧‧‧ heater
31‧‧‧ hot plate
31a‧‧‧heating surface
32‧‧‧Lifting mechanism
40‧‧‧ Treatment liquid supply department
41‧‧‧Nozzle
42‧‧‧Supply Agency
43‧‧‧ storage tank
44‧‧‧Pu
45‧‧‧flow
46‧‧‧On-off valve
50‧‧‧ Cup
51‧‧‧Exhaust pipe
60‧‧‧Control Department
L1‧‧‧ treatment liquid
G‧‧‧ Clearance
G1, G2‧‧‧Gap size
Q1, Q2‧‧‧ traffic
R1, R2‧‧‧rotating speed
V‧‧‧Draining speed
t‧‧‧time
W‧‧‧ substrate
Wa‧‧‧ surface

The accompanying drawings, which constitute a part of this specification, show presently suitable embodiments of the present invention, and together with the foregoing general description and the following detailed description of the appropriate embodiments, can help explain the nature of the invention. FIG. 1 is an explanatory diagram showing a configuration of a substrate processing apparatus according to a first embodiment of the present invention. FIG. 2 is a flowchart of substrate processing by the substrate processing apparatus. FIG. 3 is an explanatory diagram showing a change in the position of a heater in the substrate processing apparatus. FIG. 4 is a line chart showing a sequence of rotation speeds in the substrate processing apparatus. Fig. 5 is a line chart showing a sequence of positions of the heaters according to the second embodiment of the present invention. Fig. 6 is an explanatory view showing a change in the position of the heater in the embodiment. FIG. 7 is a line chart showing the sequence of the supply amount of the processing liquid according to the third embodiment of the present invention.

Claims (11)

A substrate processing apparatus includes: a substrate supporting portion that supports the substrate; a rotating portion that rotates the substrate; a processing liquid supply portion that supplies a processing liquid to a surface of the substrate; and a control portion that performs the foregoing while rotating the substrate. In the substrate processing in which the processing liquid is supplied, the processing is continued, and at a predetermined time point set in advance, a liquid discharging process is performed which changes the discharging speed of the processing liquid discharged from the substrate. The substrate processing apparatus according to claim 1, further comprising a heater, the heater being disposed facing a surface of the substrate to heat the substrate, and the control unit includes a gap adjustment unit for reducing a gap between the substrate and the heater. , Performing the aforementioned drainage treatment. The substrate processing apparatus according to claim 1, wherein the control unit includes a rotation speed adjusting unit for increasing a rotation speed of the substrate, and performs the liquid discharge treatment. The substrate processing apparatus according to claim 1, wherein the control unit includes a liquid amount adjustment unit that increases a flow rate of the processing liquid supplied to the substrate, and performs the liquid discharge processing. The substrate processing apparatus according to claim 1, wherein the control unit periodically performs the liquid drainage processing during the substrate processing, and performs the liquid drainage processing immediately before the substrate processing is completed. For example, the substrate processing apparatus according to claim 1, wherein the time of each of the aforementioned liquid discharge treatments is shorter than the time of each of the ordinary processes in the aforementioned substrate processing. The substrate processing apparatus according to claim 1, wherein the aforementioned liquid discharge processing is performed a plurality of times in the aforementioned substrate processing. For example, the substrate processing apparatus of claim 7, wherein the above-mentioned draining process is performed at a fixed time every time. For example, the substrate processing apparatus of claim 1, wherein the substrate processing includes the normal processing and the liquid drainage processing, and when the predetermined processing time A of the substrate processing is divided by the time T for the normal processing and the liquid drainage processing to be a set of processing When a remainder is generated, the time for performing the aforementioned drainage treatment is not changed, but the time for the aforementioned ordinary processing is adjusted. A substrate processing method includes the following steps: rotating a substrate; supplying a processing liquid to a surface of the substrate; heating the substrate by a heater disposed facing the substrate; and during substrate processing, setting a predetermined schedule in advance At this point, one or more processes of continuously increasing the rotation speed of the rotation, increasing the supply amount of the processing liquid, and reducing the gap between the substrate and the heater are performed to change the processing liquid. Discharge rate from the substrate. A substrate manufacturing method includes the following steps: rotating a substrate; supplying a processing liquid to a surface of the substrate; heating the substrate with a heater disposed facing the substrate; and during substrate processing, a preset At a predetermined time, one or more processes are continuously performed to increase the rotation speed of the rotation, increase the supply amount of the processing liquid, and reduce the gap between the substrate and the heater, thereby changing the processing. The speed at which the liquid moves from the substrate.