TW201802784A - Shift register - Google Patents
Shift register Download PDFInfo
- Publication number
- TW201802784A TW201802784A TW105121468A TW105121468A TW201802784A TW 201802784 A TW201802784 A TW 201802784A TW 105121468 A TW105121468 A TW 105121468A TW 105121468 A TW105121468 A TW 105121468A TW 201802784 A TW201802784 A TW 201802784A
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- signal
- voltage level
- coupled
- module
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Shift Register Type Memory (AREA)
- Electronic Switches (AREA)
Abstract
Description
本發明係關於一種移位暫存器，特別是一種用於觸控面板的移位暫存器。The invention relates to a shift register, in particular to a shift register for a touch panel.
在內嵌式（in-cell）觸控面板中，內嵌式觸控面板在同一塊基板上設置有閘極驅動電路以及觸控電路，且閘極驅動信號線與觸控信號線彼此的距離可能會很小，因此閘極驅動信號與觸控信號會彼此干擾。由於閘極驅動信號的強度較強，經由電容耦合效應，閘極驅動信號往往會造成雜訊而干擾觸控信號，而降低了觸控操作的訊噪比（signal to noise ratio, SNR）。In an in-cell touch panel, the in-cell touch panel is provided with a gate driving circuit and a touch circuit on the same substrate, and the distance between the gate driving signal line and the touch signal line is It may be small, so the gate drive signal and touch signal will interfere with each other. Due to the strong strength of the gate driving signal, the gate driving signal often causes noise and interferes with the touch signal through the capacitive coupling effect, thereby reducing the signal to noise ratio (SNR) of the touch operation.
在一種作法中，為了避免觸控信號被閘極驅動信號所干擾，一般會在致能觸控電路時，將移位暫存器中的幾個特定信號拉低至低準位，以避免閘極驅動電路與觸控電路同時運作而彼此干擾。但於此同時，如何讓閘極驅動電路於觸控電路被致能的此期間過後能快速地重新正常運作，則成為必須克服的難關。In one method, in order to prevent the touch signal from being disturbed by the gate driving signal, generally, when the touch circuit is enabled, several specific signals in the shift register are pulled to a low level to avoid the gate The electrode driving circuit and the touch circuit operate simultaneously and interfere with each other. However, at the same time, how to enable the gate driving circuit to resume normal operation quickly after the touch circuit is enabled has become an obstacle that must be overcome.
本發明揭露了一種移位暫存器，所述的移位暫存器具有開關模組、上拉模組、下拉模組、箝制模組與補償模組。上拉模組耦接開關模組。下拉模組耦接上拉模組。箝制模組耦接上拉模組。補償模組耦接上拉模組。開關模組依據啟動信號拉升控制信號的電壓準位。上拉模組依據控制信號將輸出信號的電壓準位調整為第一時脈信號的電位。下拉模組依據控制信號、下拉信號與第二時脈信號將輸出信號的電壓準位調整至參考電壓。箝制模組依據至少一箝制信號將控制信號的電壓準位與輸出信號的電壓準位調整至參考電壓。補償模組具有一儲存節點。補償模組依據第二時脈信號選擇性地將控制信號的電壓準位儲存至儲存節點。補償模組依據觸控停能信號與儲存節點的電壓準位調整控制信號的電壓準位。The invention discloses a shift register. The shift register has a switch module, a pull-up module, a pull-down module, a clamping module and a compensation module. The pull-up module is coupled to the switch module. The pull-down module is coupled to the pull-up module. The clamping module is coupled to the pull-up module. The compensation module is coupled to the pull-up module. The switch module pulls up the voltage level of the control signal according to the start signal. The pull-up module adjusts the voltage level of the output signal to the potential of the first clock signal according to the control signal. The pull-down module adjusts the voltage level of the output signal to a reference voltage according to the control signal, the pull-down signal and the second clock signal. The clamping module adjusts the voltage level of the control signal and the voltage level of the output signal to a reference voltage according to at least one clamping signal. The compensation module has a storage node. The compensation module selectively stores the voltage level of the control signal to the storage node according to the second clock signal. The compensation module adjusts the voltage level of the control signal according to the touch disable signal and the voltage level of the storage node.
綜合以上所述，本發明提供了一種移位暫存器，所述的移位暫存器在進行觸控偵測的期間，將控制信號的電壓準位暫存至補償模組的儲存節點，並在觸控偵測的期間結束後，依據觸控停能信號與儲存節點的電壓準位再調整控制信號的電壓準位，以使控制信號的電壓準位回到觸控偵測期間前的電壓準位。藉此，得以在觸控偵測間結束之後，再以具有相仿電壓準位的控制信號控制移位暫存器內的相關元件輸出正確的輸出信號。To sum up, the present invention provides a shift register. The shift register temporarily stores a voltage level of a control signal to a storage node of a compensation module during touch detection. After the touch detection period ends, the voltage level of the control signal is adjusted according to the touch disable signal and the voltage level of the storage node, so that the voltage level of the control signal returns to that before the touch detection period. Voltage level. Thereby, after the touch detection interval ends, it is possible to control the relevant components in the shift register to output correct output signals by using control signals with similar voltage levels.
以上之關於本揭露內容之說明及以下之實施方式之說明係用以示範與解釋本發明之精神與原理，並且提供本發明之專利申請範圍更進一步之解釋。The above description of the contents of this disclosure and the description of the following embodiments are used to demonstrate and explain the spirit and principle of the present invention, and provide a further explanation of the scope of the patent application of the present invention.
以下在實施方式中詳細敘述本發明之詳細特徵以及優點，其內容足以使任何熟習相關技藝者了解本發明之技術內容並據以實施，且根據本說明書所揭露之內容、申請專利範圍及圖式，任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。以下之實施例係進一步詳細說明本發明之觀點，但非以任何觀點限制本發明之範疇。The detailed features and advantages of the present invention are described in detail in the following embodiments. The content is sufficient for any person skilled in the art to understand and implement the technical content of the present invention, and according to the content disclosed in this specification, the scope of patent applications and the drawings. Anyone skilled in the relevant art can easily understand the related objects and advantages of the present invention. The following examples further illustrate the viewpoints of the present invention in detail, but do not limit the scope of the present invention in any way.
請參照圖1，圖1係為根據本發明一實施例所繪示之移位暫存器的電路示意圖。移位暫存器1具有開關模組11、上拉模組13、下拉模組15、箝制模組17與補償模組19。上拉模組13耦接開關模組11。下拉模組15耦接上拉模組13。箝制模組17耦接上拉模組13。補償模組19耦接上拉模組13。移位暫存器1例如是以非晶矽(Amorphous Silicon, A-Si)製程、多晶矽（Poly-Silicon）製程或低溫矽基板（low-temperature silicon substrate）製程製成，在此並不加以限制。在此實施例中，閘極驅動電路1係採用一傳二的結構，而並不以此為限。而在後續的實施例中，皆舉以N型摻雜的薄膜電晶體（thin film transistor, TFT）為例進行說明。然各薄膜電晶體經考量與相關控制信號配合後，也可置換為P型的薄膜電晶體，而不以所舉之例為限制。Please refer to FIG. 1, which is a schematic circuit diagram of a shift register according to an embodiment of the present invention. The shift register 1 includes a switch module 11, a pull-up module 13, a pull-down module 15, a clamping module 17, and a compensation module 19. The pull-up module 13 is coupled to the switch module 11. The pull-down module 15 is coupled to the pull-up module 13. The clamping module 17 is coupled to the pull-up module 13. The compensation module 19 is coupled to the pull-up module 13. The shift register 1 is made of, for example, an Amorphous Silicon (A-Si) process, a Poly-Silicon process, or a low-temperature silicon substrate process, which is not limited herein. . In this embodiment, the gate driving circuit 1 adopts a two-pass structure, and is not limited thereto. In the following embodiments, an N-type doped thin film transistor (TFT) is used as an example for description. However, after considering and cooperating with relevant control signals, each thin film transistor can be replaced with a P-type thin film transistor, without being limited to the example given.
開關模組11用以依據啟動信號ST(n-1)拉升控制信號Q(n)的電壓準位。在此實施例中，當啟動信號ST(n-1)的電壓準位為高準位時，開關模組11依據啟動信號ST(n-1)將控制信號Q(n)的電壓準位拉升至前一級的輸出信號G(n-1)的電壓準位。The switch module 11 is used to pull up the voltage level of the control signal Q (n) according to the start signal ST (n-1). In this embodiment, when the voltage level of the start signal ST (n-1) is a high level, the switch module 11 pulls the voltage level of the control signal Q (n) according to the start signal ST (n-1). The voltage level of the output signal G (n-1) raised to the previous stage.
上拉模組13依據控制信號Q(n)將輸出信號G(n)的電壓準位調整為第一時脈信號HC1的電位。在此實施例中，當控制信號Q(n)的電壓準位為高準位時，開關模組11依據控制信號Q(n)將輸出信號G(n)的電壓準位調整為第一時脈信號HC1的電壓準位。The pull-up module 13 adjusts the voltage level of the output signal G (n) to the potential of the first clock signal HC1 according to the control signal Q (n). In this embodiment, when the voltage level of the control signal Q (n) is a high level, the switch module 11 adjusts the voltage level of the output signal G (n) to the first time according to the control signal Q (n). The voltage level of the pulse signal HC1.
在此實施例中，上拉模組13包括電容C1與上拉電晶體T21。上拉電晶體T21的一端用以接收第一時脈信號HC1。上拉電晶體T21的另一端耦接至輸出信號G(n)。上拉電晶體T21的控制端用以接收控制信號Q(n)。電容C1的兩端分別用以接收控制信號Q(n)與輸出信號G(n)。於實務上，上拉模組13更可具有上拉電晶體T22。上拉電晶體T22的一端用以接收第一時脈信號HC1。上拉電晶體T22的另一端耦接至下拉信號ST(n)。上拉電晶體T22的控制端耦接至電容C1，且上拉電晶體T22的控制端用以接收控制信號Q(n)。In this embodiment, the pull-up module 13 includes a capacitor C1 and a pull-up transistor T21. One end of the pull-up transistor T21 is used to receive the first clock signal HC1. The other end of the pull-up transistor T21 is coupled to the output signal G (n). The control terminal of the pull-up transistor T21 is used to receive the control signal Q (n). Two ends of the capacitor C1 are respectively used to receive the control signal Q (n) and the output signal G (n). In practice, the pull-up module 13 may further include a pull-up transistor T22. One end of the pull-up transistor T22 is used to receive the first clock signal HC1. The other end of the pull-up transistor T22 is coupled to the pull-down signal ST (n). The control terminal of the pull-up transistor T22 is coupled to the capacitor C1, and the control terminal of the pull-up transistor T22 is used to receive the control signal Q (n).
下拉模組15依據控制信號Q(n)、下拉信號ST(n)與第二時脈信號HC4將輸出信號G(n)的電壓準位調整至參考電壓VSS。在此實施例中，當第二時脈信號HC4為高電壓準位時，輸出信號G(n)的電壓準位被調整至參考電壓VSS。在此實施例中，參考電壓VSS例如為一相對低的電壓準位，然在此並不限定其實質大小。The pull-down module 15 adjusts the voltage level of the output signal G (n) to the reference voltage VSS according to the control signal Q (n), the pull-down signal ST (n) and the second clock signal HC4. In this embodiment, when the second clock signal HC4 is at a high voltage level, the voltage level of the output signal G (n) is adjusted to the reference voltage VSS. In this embodiment, the reference voltage VSS is, for example, a relatively low voltage level, but its actual size is not limited herein.
箝制模組17依據箝制信號P(n)或箝制信號ST(n+2)將控制信號Q(n)的電壓準位與輸出信號G(n)的電壓準位調整至參考電壓VSS。在此實施例中，當箝制信號P(n)與箝制信號ST(n+2)為高電壓準位時，控制信號Q(n)的電壓準位與輸出信號G(n)的電壓準位對應地被調整至參考電壓VSS。The clamping module 17 adjusts the voltage level of the control signal Q (n) and the voltage level of the output signal G (n) to the reference voltage VSS according to the clamping signal P (n) or the clamping signal ST (n + 2). In this embodiment, when the clamp signal P (n) and the clamp signal ST (n + 2) are at a high voltage level, the voltage level of the control signal Q (n) and the voltage level of the output signal G (n) Correspondingly is adjusted to the reference voltage VSS.
補償模組19具有儲存節點NS。後續係以電壓準位Q’(n)簡要表示儲存節點NS的電壓準位。補償模組19依據第二時脈信號HC4選擇性地將控制信號Q(n)的電壓準位儲存至儲存節點NS。補償模組19依據觸控停能信號TP_off與儲存節點NS的電壓準位調整控制信號Q(n)的電壓準位。更詳細地來說，補償模組19具有暫存電路192與電容C2。電容C2的第一端耦接儲存節點NS。暫存電路192耦接電容C2的兩端，且暫存電路192依據第二時脈信號HC4將電容C2的第一端的端電壓調整為控制信號Q(n)的電壓準位。在此實施例中，當第二時脈信號HC4為高電壓準位時，暫存電路192依據第二時脈信號HC4將電容C2的第一端的端電壓調整為控制信號Q(n)的電壓準位。從另一個角度來說，暫存電路192依據第二時脈信號HC4將控制信號Q(n)的電壓準位暫存至儲存節點NS。The compensation module 19 has a storage node NS. In the following, the voltage level of the storage node NS is briefly expressed by the voltage level Q '(n). The compensation module 19 selectively stores the voltage level of the control signal Q (n) to the storage node NS according to the second clock signal HC4. The compensation module 19 adjusts the voltage level of the control signal Q (n) according to the touch disable signal TP_off and the voltage level of the storage node NS. In more detail, the compensation module 19 includes a temporary storage circuit 192 and a capacitor C2. The first terminal of the capacitor C2 is coupled to the storage node NS. The temporary storage circuit 192 is coupled to both ends of the capacitor C2. The temporary storage circuit 192 adjusts the terminal voltage of the first terminal of the capacitor C2 to the voltage level of the control signal Q (n) according to the second clock signal HC4. In this embodiment, when the second clock signal HC4 is at a high voltage level, the temporary storage circuit 192 adjusts the terminal voltage of the first terminal of the capacitor C2 to the control signal Q (n) according to the second clock signal HC4 Voltage level. From another perspective, the temporary storage circuit 192 temporarily stores the voltage level of the control signal Q (n) to the storage node NS according to the second clock signal HC4.
暫存電路192具有第一電晶體T73、第二電晶體T74與第三電晶體T75。就作動上而言，第一電晶體T73依據第二時脈信號的電位調整儲存節點NS的電壓準位至控制信號Q(n)的電壓準位。第二電晶體T74依據觸控停能信號TP_OFF調整控制信號Q(n)的電壓準位至儲存節點NS的電壓準位。第三電晶體T75依據儲存節點NS的電壓準位與觸控停能信號TP_OFF的電壓準位調整電容C2的第二端的電壓準位K(n)。The temporary storage circuit 192 includes a first transistor T73, a second transistor T74, and a third transistor T75. In terms of operation, the first transistor T73 adjusts the voltage level of the storage node NS to the voltage level of the control signal Q (n) according to the potential of the second clock signal. The second transistor T74 adjusts the voltage level of the control signal Q (n) to the voltage level of the storage node NS according to the touch disable signal TP_OFF. The third transistor T75 adjusts the voltage level K (n) of the second terminal of the capacitor C2 according to the voltage level of the storage node NS and the voltage level of the touch disable signal TP_OFF.
暫存電路192具有多種不同的實施態樣，請容後一一舉例說明。在圖1所示的實施例中，第一電晶體T73的第一端耦接開關模組11中的電晶體T11的一端，且第一電晶體T73的第一端耦接上拉模組13中的電晶體T22的控制端與電晶體T24的控制端。第一電晶體T73的第二端耦接儲存節點NS。第一電晶體T73的控制端用以接收第二時脈信號HC4。第二電晶體T74的第一端耦接儲存節點NS。第二電晶體T74的第二端用以接收控制信號Q(n)。第二電晶體T74的控制端用以接收觸控停能信號TP_OFF。第三電晶體T75的第一端耦接電容C2，第三電晶體T75的第二端用以接收觸控停能信號TP_OFF，第三電晶體T75的控制端耦接儲存節點NS。其中，上拉模組13中的電容C1的電容值為補償模組19中的電容C2的電容值的兩倍。The temporary storage circuit 192 has a variety of different implementation modes, and please describe them one by one later. In the embodiment shown in FIG. 1, the first terminal of the first transistor T73 is coupled to one end of the transistor T11 in the switch module 11, and the first terminal of the first transistor T73 is coupled to the pull-up module 13. The control terminal of transistor T22 and the control terminal of transistor T24. The second terminal of the first transistor T73 is coupled to the storage node NS. The control terminal of the first transistor T73 is used to receive a second clock signal HC4. The first terminal of the second transistor T74 is coupled to the storage node NS. The second terminal of the second transistor T74 is used to receive the control signal Q (n). The control terminal of the second transistor T74 is used to receive the touch disable signal TP_OFF. The first terminal of the third transistor T75 is coupled to the capacitor C2, the second terminal of the third transistor T75 is used to receive the touch disable signal TP_OFF, and the control terminal of the third transistor T75 is coupled to the storage node NS. The capacitance value of the capacitor C1 in the pull-up module 13 is twice the capacitance value of the capacitor C2 in the compensation module 19.
在一實施例中，第一電晶體T73的尺寸相當於圖1中的電晶體T54，第二電晶體T74的尺寸相當於圖1中的電晶體T22，第三電晶體T75的尺寸相當於圖1中的電晶體T52。藉此，得以妥善地協調各電晶體的充放電能力，以使各對應節點被充放至所欲的電壓準位。In one embodiment, the size of the first transistor T73 is equivalent to the transistor T54 in FIG. 1, the size of the second transistor T74 is equivalent to the transistor T22 in FIG. 1, and the size of the third transistor T75 is equivalent to Transistor T52 in 1. In this way, the charge and discharge capabilities of the transistors can be properly coordinated, so that the corresponding nodes are charged and discharged to a desired voltage level.
除了上述元件之外，如圖1所示，移位暫存器1更可具有輔助下拉模組18。輔助下拉模組18依據觸控致能信號TP_EN 調整輸出信號G(n)的電壓準位至參考電壓VSS的電壓準位。且輔助下拉模組18依據觸控致能信號TP_EN調整控制信號Q(n)的電壓準位至參考電壓VSS的電壓準位。In addition to the above components, as shown in FIG. 1, the shift register 1 may further include an auxiliary pull-down module 18. The auxiliary pull-down module 18 adjusts the voltage level of the output signal G (n) to the voltage level of the reference voltage VSS according to the touch enable signal TP_EN. The auxiliary pull-down module 18 adjusts the voltage level of the control signal Q (n) to the voltage level of the reference voltage VSS according to the touch enable signal TP_EN.
輔助下拉模組18可具有多種的實施態樣。在圖1所示的實施例中，輔助下拉模組18具有第四電晶體T71與第五電晶體T72。第四電晶體T71的一端用以接收輸出信號G(n)。第四電晶體T71的另一端用以接收參考電壓VSS。第四電晶體T71的控制端用以接收觸控致能信號TP_EN。第五電晶體T72的一端用以接收控制信號Q(n)。第五電晶體T72的另一端用以接收參考電壓VSS。第五電晶體T72的控制端用以接收觸控致能信號TP_EN。The auxiliary pull-down module 18 may have various implementations. In the embodiment shown in FIG. 1, the auxiliary pull-down module 18 has a fourth transistor T71 and a fifth transistor T72. One end of the fourth transistor T71 is used to receive the output signal G (n). The other end of the fourth transistor T71 is used to receive the reference voltage VSS. The control terminal of the fourth transistor T71 is used to receive a touch enable signal TP_EN. One terminal of the fifth transistor T72 is used to receive the control signal Q (n). The other end of the fifth transistor T72 is used to receive the reference voltage VSS. The control terminal of the fifth transistor T72 is used to receive the touch enable signal TP_EN.
第四電晶體T71用以依據觸控致能信號TP_EN調整輸出信號G(n)至第二參考電壓VSS。第五電晶體T72用以依據觸控致能信號TP_EN調整控制信號Q(n)至第二參考電壓VSS。在此實施例中，當觸控致能信號TP_EN為高電壓準位時，第四電晶體T71與第五電晶體T72被導通而分別將輸出信號G(n)與控制信號Q(n)的電壓準位調整至參考電壓VSS的電壓準位。需注意的是，輔助下拉模組18為一選擇性的設計，移位暫存器1並不一定要具有輔助下拉模組18。The fourth transistor T71 is used to adjust the output signal G (n) to the second reference voltage VSS according to the touch enable signal TP_EN. The fifth transistor T72 is used to adjust the control signal Q (n) to the second reference voltage VSS according to the touch enable signal TP_EN. In this embodiment, when the touch enable signal TP_EN is at a high voltage level, the fourth transistor T71 and the fifth transistor T72 are turned on to respectively switch the output signal G (n) and the control signal Q (n). The voltage level is adjusted to the voltage level of the reference voltage VSS. It should be noted that the auxiliary pull-down module 18 is an optional design, and the shift register 1 does not necessarily have the auxiliary pull-down module 18.
請接著參照圖2以說明圖1所示之實施例的控制時序，圖2係為根據圖1所繪示之移位暫存器的時序示意圖。在圖2中標示有時間點t1~t8，並繪示有各時脈信號HC1~HC4、觸控致能信號TP_EN、觸控停能信號TP_OFF、控制信號Q(n)、電壓準位Q’(n)與電壓準位K(n)的相對時序。其中，時脈信號HC1為前述的第一時脈信號，時脈信號HC4為前述的第二時脈信號，且移位暫存器1實際上可更關聯於更多的時脈信號，而不僅以所舉的時脈信號HC1至時脈信號HC4為限制。於一實施例的一操作週期中，第二時脈信號HC4的時序先於第一時脈信號HC1的時序。所述的操作週期例如是以時間點t2作為起點，以就是以第二時脈信號HC4被拉高的其中一個時間點作為起點。Please refer to FIG. 2 to explain the control sequence of the embodiment shown in FIG. 1. FIG. 2 is a timing diagram of the shift register according to FIG. 1. The time points t1 to t8 are marked in FIG. 2 and the clock signals HC1 to HC4, the touch enable signal TP_EN, the touch disable signal TP_OFF, the control signal Q (n), and the voltage level Q ' (n) Relative timing with voltage level K (n). Among them, the clock signal HC1 is the aforementioned first clock signal, and the clock signal HC4 is the aforementioned second clock signal, and the shift register 1 may actually be more associated with more clock signals, not only It is limited by the listed clock signals HC1 to HC4. In an operation cycle of an embodiment, the timing of the second clock signal HC4 precedes the timing of the first clock signal HC1. The operation cycle is, for example, based on the time point t2 as a starting point, or one of the time points when the second clock signal HC4 is pulled up as a starting point.
觸控致能信號TP_EN用以指示系統是否正進行觸控偵測。在此實施例中，當系統正進行觸控偵測時，觸控致能信號TP_EN為高電壓準位。於另一實施例子中，當系統正進行觸控偵測時，觸控致能信號TP_EN為低電壓準位。觸控停能信號TP_OFF用以指示系統是否停止觸控偵測。在此實施例中，當系統停止觸控偵測後的一段預設區間中，觸控致能信號TP_EN為高電壓準位。在另一實施例中，當系統停止觸控偵測後的一段預設區間中，觸控致能信號TP_EN為低電壓準位。在此並不限制所述的預設區間的長度。上述僅為舉例示範，然各信號實際上的實施態樣並不以所舉之例為限。The touch enable signal TP_EN is used to indicate whether the system is performing touch detection. In this embodiment, when the system is performing touch detection, the touch enable signal TP_EN is at a high voltage level. In another implementation example, when the system is performing touch detection, the touch enable signal TP_EN is at a low voltage level. The touch disable signal TP_OFF is used to indicate whether the system stops touch detection. In this embodiment, when the system stops touch detection, the touch enable signal TP_EN is at a high voltage level. In another embodiment, when the system stops touch detection, the touch enable signal TP_EN is at a low voltage level. The length of the preset interval is not limited herein. The above is just an example, but the actual implementation of each signal is not limited to the examples given.
自時間點t1始，時脈信號HC1以至時脈信號HC4係依序被調高，而使移位暫存器1及其前後級的移位暫存器開始作動。From the time point t1, the clock signal HC1 and the clock signal HC4 are sequentially raised, so that the shift register 1 and the shift registers of the previous and subsequent stages start to operate.
於時間點t2，時脈信號HC4與控制信號Q(n)被拉至高電壓準位。此時，第一電晶體T73導通，儲存節點NS的電壓準位Q’(n)被對應地拉至高電壓準位。At time point t2, the clock signal HC4 and the control signal Q (n) are pulled to a high voltage level. At this time, the first transistor T73 is turned on, and the voltage level Q '(n) of the storage node NS is correspondingly pulled to a high voltage level.
於時間點t3，觸控致能信號TP_EN被拉至高電壓準位，時脈信號HC4被拉至低電壓準位。此時，控制信號Q(n)被輔助下拉模組18拉至低電壓準位，而儲存節點NS的電壓準位Q’(n)則是維持高電壓準位。At time point t3, the touch enable signal TP_EN is pulled to a high voltage level, and the clock signal HC4 is pulled to a low voltage level. At this time, the control signal Q (n) is pulled to a low voltage level by the auxiliary pull-down module 18, and the voltage level Q '(n) of the storage node NS is maintained at a high voltage level.
於時間點t4，觸控致能信號TP_EN被拉至低電壓準位，觸控停能信號TP_OFF被拉至高電壓準位。此時，電壓準位K(n)經由第三電晶體T75被拉至高電壓準位。經由電容耦合效應，儲存節點NS的電壓準位Q’(n)被從原先的高電壓準位再被推得更高。由於觸控停能信號TP_OFF被拉至高電壓準位，第二電晶體T74被導通，控制信號Q(n)依據儲存節點NS的電壓準位Q’(n)而被拉至高電壓準位。另一方面，在時間點t3至時間點t4之間，由於觸控致能信號TP_EN為高電壓準位，時脈信號HC1至時脈信號HC4維持低電壓準位，而使移位暫存器1暫時停能。At time t4, the touch enable signal TP_EN is pulled to a low voltage level, and the touch disable signal TP_OFF is pulled to a high voltage level. At this time, the voltage level K (n) is pulled to a high voltage level via the third transistor T75. Through the capacitive coupling effect, the voltage level Q '(n) of the storage node NS is pushed higher from the original high voltage level. Since the touch disable signal TP_OFF is pulled to a high voltage level, the second transistor T74 is turned on, and the control signal Q (n) is pulled to a high voltage level according to the voltage level Q '(n) of the storage node NS. On the other hand, between the time point t3 and the time point t4, since the touch enable signal TP_EN is at a high voltage level, the clock signal HC1 to the clock signal HC4 maintain the low voltage level, so that the shift register 1 temporarily disabled.
於時間點t5，時脈信號HC1被拉至高電壓準位，經由電容C1的電容耦合效應而將控制信號Q(n)自原本的高電壓準位推得更高，以使移位暫存器1穩定輸出具有高電壓準位的輸出信號G(n)。At time point t5, the clock signal HC1 is pulled to a high voltage level, and the control signal Q (n) is pushed higher from the original high voltage level by the capacitive coupling effect of the capacitor C1 to make the shift register 1 Stably outputs an output signal G (n) having a high voltage level.
於時間點t6，觸控停能信號TP_OFF被拉至低電壓準位，使得電壓準位K(n)被拉至低電壓準位。此時，儲存節點NS的電壓準位Q’(n)被拉回原本的高電壓準位。At time t6, the touch disable signal TP_OFF is pulled to a low voltage level, so that the voltage level K (n) is pulled to a low voltage level. At this time, the voltage level Q '(n) of the storage node NS is pulled back to the original high voltage level.
於時間點t7，時脈信號HC3被拉至高電壓準位。此時，對應於時脈信號HC3，箝制信號ST(n+2)被對應地拉高，而將控制信號Q(n)拉至低電壓準位。At time point t7, the clock signal HC3 is pulled to a high voltage level. At this time, corresponding to the clock signal HC3, the clamp signal ST (n + 2) is correspondingly pulled up, and the control signal Q (n) is pulled to a low voltage level.
於時間點t8，時脈信號HC4被拉至高電壓準位。此時，儲存節點NS則經由下拉模組15所提供的電流路徑放電，而將儲存節點NS的電壓準位Q’(n)拉至低電壓準位。At time point t8, the clock signal HC4 is pulled to a high voltage level. At this time, the storage node NS is discharged through the current path provided by the pull-down module 15, and the voltage level Q '(n) of the storage node NS is pulled to a low voltage level.
請再參照圖3，圖3係為根據本發明另一實施例所繪示之移位暫存器的電路示意圖。如圖3所示，移位暫存器2具有與圖1所示的移位暫存器1相仿的電路結構。與圖1所示的移位暫存器1不同的是，圖3所示的移位暫存器2的補償模組29的第一電晶體T73耦接至開關模組21中電晶體T11的另一端。從另一個角度來說，儲存節點NS的電壓準位Q’(n)係經由第一電晶體T73而直接被前一級的輸出信號G(n-1)選擇性地拉高。Please refer to FIG. 3 again. FIG. 3 is a schematic circuit diagram of a shift register according to another embodiment of the present invention. As shown in FIG. 3, the shift register 2 has a circuit structure similar to that of the shift register 1 shown in FIG. 1. Different from the shift register 1 shown in FIG. 1, the first transistor T73 of the compensation module 29 of the shift register 2 shown in FIG. 3 is coupled to the transistor T11 of the switch module 21. another side. From another perspective, the voltage level Q '(n) of the storage node NS is selectively pulled up directly by the output signal G (n-1) of the previous stage via the first transistor T73.
請參照圖4，圖4係為根據本發明更一實施例所繪示之移位暫存器的電路示意圖。如圖4所示，移位暫存器3具有與圖1所示的移位暫存器1相仿的電路結構。與圖1所示的移位暫存器1不同的是，圖4所示的移位暫存器3的補償模組39的第一電晶體T73耦接至開關模組31中電晶體T11的控制端。從另一個角度來說，儲存節點NS的電壓準位Q’(n)係經由第一電晶體T73而直接被啟動信號ST(n-1)選擇性地拉高。Please refer to FIG. 4, which is a schematic circuit diagram of a shift register according to another embodiment of the present invention. As shown in FIG. 4, the shift register 3 has a circuit structure similar to that of the shift register 1 shown in FIG. 1. Different from the shift register 1 shown in FIG. 1, the first transistor T73 of the compensation module 39 of the shift register 3 shown in FIG. 4 is coupled to the transistor T11 of the switch module 31. Control terminal. From another perspective, the voltage level Q '(n) of the storage node NS is selectively pulled up directly by the start signal ST (n-1) via the first transistor T73.
請參照圖5，圖5係為根據本發明再一實施例所繪示之移位暫存器的電路示意圖。如圖5所示，移位暫存器4具有與圖1所示的移位暫存器1相仿的電路結構。與圖1所示的移位暫存器1不同的是，移位暫存器4的補償模組49的電容C2的第一端耦接儲存節點NS與第一電晶體T73，而補償模組49的電容C2的第二端耦接第二電晶體T74與第三電晶體T75。Please refer to FIG. 5, which is a circuit diagram of a shift register according to another embodiment of the present invention. As shown in FIG. 5, the shift register 4 has a circuit structure similar to that of the shift register 1 shown in FIG. 1. Different from the shift register 1 shown in FIG. 1, the first end of the capacitor C2 of the compensation module 49 of the shift register 4 is coupled to the storage node NS and the first transistor T73, and the compensation module is The second terminal of the capacitor C2 of 49 is coupled to the second transistor T74 and the third transistor T75.
請參照圖6，圖6係為根據本發明又一實施例所繪示之移位暫存器的電路示意圖。如圖6所示，移位暫存器5具有與圖5所示的移位暫存器4相仿的電路結構。與圖5所示的移位暫存器4不同的是，移位暫存器5的補償模組59的第二電晶體T74的控制端是耦接儲存節點NS與第三電晶體T75的控制端。Please refer to FIG. 6, which is a schematic circuit diagram of a shift register according to another embodiment of the present invention. As shown in FIG. 6, the shift register 5 has a circuit structure similar to that of the shift register 4 shown in FIG. 5. Different from the shift register 4 shown in FIG. 5, the control terminal of the second transistor T74 of the compensation module 59 of the shift register 5 is a control coupled to the storage node NS and the third transistor T75. end.
在圖3以至圖6所示的相關實施例中，各移位暫存器同樣可適用於如圖2所示的控制時序當中。相關細節當為所屬技術領域具有通常知識者經詳閱本說明書後可自由推知，於此不再重複贅述。In the related embodiments shown in FIG. 3 to FIG. 6, each shift register is also applicable to the control sequence shown in FIG. 2. Relevant details can be inferred freely by those with ordinary knowledge in the technical field after reading this specification, and will not be repeated here.
綜合以上所述，本發明提供了一種移位暫存器，所述的移位暫存器在進行觸控偵測的期間，將控制信號的電壓準位暫存至補償模組的儲存節點，並在觸控偵測的期間結束後，依據觸控停能信號與儲存節點的電壓準位再調整控制信號的電壓準位，以使控制信號的電壓準位回到觸控偵測期間前的電壓準位。藉此，得以在觸控偵測間結束之後，再以具有相仿電壓準位的控制信號控制移位暫存器內的相關元件輸出正確的輸出信號。To sum up, the present invention provides a shift register. The shift register temporarily stores a voltage level of a control signal to a storage node of a compensation module during touch detection. After the touch detection period ends, the voltage level of the control signal is adjusted according to the touch disable signal and the voltage level of the storage node, so that the voltage level of the control signal returns to that before the touch detection period. Voltage level. Thereby, after the touch detection interval ends, it is possible to control the relevant components in the shift register to output correct output signals by using control signals with similar voltage levels.
雖然本發明以前述之實施例揭露如上，然其並非用以限定本發明。在不脫離本發明之精神和範圍內，所為之更動與潤飾，均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。Although the present invention is disclosed in the foregoing embodiments, it is not intended to limit the present invention. Changes and modifications made without departing from the spirit and scope of the present invention belong to the patent protection scope of the present invention. For the protection scope defined by the present invention, please refer to the attached patent application scope.
1~5‧‧‧移位暫存器
11~51‧‧‧開關模組
13~53‧‧‧上拉模組
15~55‧‧‧下拉模組
17~57‧‧‧箝制模組
18~58‧‧‧輔助下拉模組
19~59‧‧‧補償模組
192~592‧‧‧暫存電路
C1、C2‧‧‧電容
G(n-1)、G(n)‧‧‧輸出信號
HC1~HC4‧‧‧時脈信號
K(n)‧‧‧電壓準位
NS‧‧‧儲存節點
P(n)‧‧‧箝制信號
Q(n)‧‧‧控制信號
Q’(n)‧‧‧電壓準位
T11~T75‧‧‧電晶體
TP_EN‧‧‧觸控致能信號
TP_OFF‧‧‧觸控停能信號
t1~t8‧‧‧時間點
ST(n-1)‧‧‧啟動信號
ST(n)‧‧‧下拉信號
ST(n+2)‧‧‧箝制信號
VSS‧‧‧參考電壓1 ~ 5‧‧‧Shift register
11 ~ 51‧‧‧Switch Module
13 ~ 53‧‧‧pull-up module
15 ~ 55‧‧‧ pull-down module
17 ~ 57‧‧‧ clamping module
18 ~ 58‧‧‧Auxiliary pull-down module
19 ~ 59‧‧‧Compensation module
192 ~ 592‧‧‧Temporary storage circuit
C1, C2‧‧‧capacitor
G (n-1), G (n) ‧‧‧ output signal
HC1 ~ HC4‧‧‧clock signal
K (n) ‧‧‧Voltage level
NS‧‧‧Storage Node
P (n) ‧‧‧clamp signal
Q (n) ‧‧‧Control signal
Q '(n) ‧‧‧Voltage level
T11 ~ T75‧‧‧Transistors
TP_EN‧‧‧Touch enable signal
TP_OFF‧‧‧Touch disable signal
t1 ~ t8‧‧‧Time
ST (n-1) ‧‧‧Start signal
ST (n) ‧‧‧ pull-down signal
ST (n + 2) ‧‧‧Clamping signal
VSS‧‧‧Reference voltage
圖1係為根據本發明一實施例所繪示之移位暫存器的電路示意圖。 圖2係為根據圖1所繪示之移位暫存器的時序示意圖。 圖3係為根據本發明另一實施例所繪示之移位暫存器的電路示意圖。 圖4係為根據本發明更一實施例所繪示之移位暫存器的電路示意圖。 圖5係為根據本發明再一實施例所繪示之移位暫存器的電路示意圖。 圖6係為根據本發明又一實施例所繪示之移位暫存器的電路示意圖。FIG. 1 is a schematic circuit diagram of a shift register according to an embodiment of the present invention. FIG. 2 is a timing diagram of the shift register according to FIG. 1. FIG. 3 is a schematic circuit diagram of a shift register according to another embodiment of the present invention. FIG. 4 is a schematic circuit diagram of a shift register according to another embodiment of the present invention. FIG. 5 is a schematic circuit diagram of a shift register according to another embodiment of the present invention. FIG. 6 is a circuit diagram of a shift register according to another embodiment of the present invention.
1‧‧‧移位暫存器 1‧‧‧ shift register
11‧‧‧開關模組 11‧‧‧Switch Module
13‧‧‧上拉模組 13‧‧‧Pull-up module
15‧‧‧下拉模組 15‧‧‧ pull-down module
17‧‧‧箝制模組 17‧‧‧ clamping module
18‧‧‧輔助下拉模組 18‧‧‧ auxiliary pull-down module
19‧‧‧補償模組 19‧‧‧ compensation module
192‧‧‧暫存電路 192‧‧‧Temporary storage circuit
C1、C2‧‧‧電容 C1, C2‧‧‧capacitor
G(n-1)、G(n)‧‧‧輸出信號 G (n-1), G (n) ‧‧‧ output signal
HC1~HC4‧‧‧時脈信號 HC1 ~ HC4‧‧‧clock signal
K(n)‧‧‧電壓準位 K (n) ‧‧‧Voltage level
NS‧‧‧儲存節點 NS‧‧‧Storage Node
P(n)‧‧‧箝制信號 P (n) ‧‧‧clamp signal
Q(n)‧‧‧控制信號 Q (n) ‧‧‧Control signal
Q’(n)‧‧‧電壓準位 Q ’(n) ‧‧‧Voltage level
T11~T75‧‧‧電晶體 T11 ~ T75‧‧‧Transistors
TP_EN‧‧‧觸控致能信號 TP_EN‧‧‧Touch enable signal
TP_OFF‧‧‧觸控停能信號 TP_OFF‧‧‧Touch disable signal
ST(n-1)‧‧‧啟動信號 ST (n-1) ‧‧‧Start signal
ST(n)‧‧‧下拉信號 ST (n) ‧‧‧ pull-down signal
ST(n+2)‧‧‧箝制信號 ST (n + 2) ‧‧‧Clamping signal
VSS‧‧‧參考電壓 VSS‧‧‧Reference voltage
Claims (10)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105121468A TWI578297B (en) | 2016-07-06 | 2016-07-06 | Shift register |
| CN201610930038.8A CN106297888B (en) | 2016-07-06 | 2016-10-31 | Shift temporary storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105121468A TWI578297B (en) | 2016-07-06 | 2016-07-06 | Shift register |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI578297B TWI578297B (en) | 2017-04-11 |
| TW201802784A true TW201802784A (en) | 2018-01-16 |
Family
ID=57720761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105121468A TWI578297B (en) | 2016-07-06 | 2016-07-06 | Shift register |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106297888B (en) |
| TW (1) | TWI578297B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI898746B (en) * | 2024-07-26 | 2025-09-21 | 禾瑞亞科技股份有限公司 | Touch sensitive processing method, apparatus and touch system |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI625710B (en) * | 2017-04-28 | 2018-06-01 | 友達光電股份有限公司 | Gate driving circuit and display device using the same |
| TWI638348B (en) | 2017-08-25 | 2018-10-11 | 友達光電股份有限公司 | Shift register and touch display apparatus thereof |
| TWI631568B (en) * | 2017-09-30 | 2018-08-01 | 友達光電股份有限公司 | Shift register circuit and operation method thereof |
| CN109935198B (en) * | 2018-05-31 | 2021-01-22 | 京东方科技集团股份有限公司 | Shift register unit, grid driving circuit, display device and driving method |
| CN109935196B (en) | 2018-02-14 | 2020-12-01 | 京东方科技集团股份有限公司 | Shift register unit, gate driving circuit, display device and driving method |
| CN109935197B (en) | 2018-02-14 | 2021-02-26 | 京东方科技集团股份有限公司 | Shift register unit, gate driving circuit, display device and driving method |
| WO2019157865A1 (en) | 2018-02-14 | 2019-08-22 | 京东方科技集团股份有限公司 | Shift register unit, gate driving circuit, display device, and driving method |
| CN108847192B (en) * | 2018-05-30 | 2019-07-12 | 南京中电熊猫平板显示科技有限公司 | A kind of gated sweep driving circuit and display device |
| TWI756969B (en) * | 2020-12-07 | 2022-03-01 | 友達光電股份有限公司 | Shift register circuit |
| CN115691437B (en) | 2021-07-27 | 2025-09-09 | 北京京东方显示技术有限公司 | Display panel driving method, display panel and display device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101572378B1 (en) * | 2014-08-04 | 2015-11-27 | 엘지디스플레이 주식회사 | Display device having touch sensors |
| CN105280134B (en) * | 2015-07-02 | 2018-11-23 | 友达光电股份有限公司 | Shift register circuit and operation method thereof |
| CN105185343B (en) * | 2015-10-15 | 2017-12-29 | 京东方科技集团股份有限公司 | Shift register cell and its driving method, gate driving circuit and display device |
| TWI587190B (en) * | 2015-11-04 | 2017-06-11 | 友達光電股份有限公司 | Touch display apparatus and shift register thereof |
| TWI562041B (en) * | 2015-11-06 | 2016-12-11 | Au Optronics Corp | Shift register circuit |
| CN105679262B (en) * | 2016-01-12 | 2017-08-29 | 京东方科技集团股份有限公司 | Shift register and its driving method, gate driving circuit and display device |
-
2016
- 2016-07-06 TW TW105121468A patent/TWI578297B/en not_active IP Right Cessation
- 2016-10-31 CN CN201610930038.8A patent/CN106297888B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI898746B (en) * | 2024-07-26 | 2025-09-21 | 禾瑞亞科技股份有限公司 | Touch sensitive processing method, apparatus and touch system |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI578297B (en) | 2017-04-11 |
| CN106297888B (en) | 2019-11-08 |
| CN106297888A (en) | 2017-01-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI578297B (en) | Shift register | |
| CN103345941B (en) | Shift register cell and driving method, shift-register circuit and display device | |
| KR102019578B1 (en) | GOA circuit and liquid crystal display | |
| CN103839518B (en) | Shift register and driving method thereof | |
| US9640276B2 (en) | Shift register unit and gate driving circuit | |
| CN103280200B (en) | Shift register unit, gate drive circuit and display device | |
| CN102881243B (en) | Shift Register | |
| CN105895047B (en) | Shift register cell, gate drive apparatus, display device, control method | |
| KR20170102283A (en) | Goa circuit for liquid crystal display device | |
| WO2019091168A1 (en) | Shift register unit and driving method thereof, gate driving circuit, display device | |
| WO2016188287A1 (en) | Shift register and driving method therefor, gate driving circuit, and display device | |
| JP2018507426A (en) | GOA circuit for liquid crystal display | |
| WO2016065850A1 (en) | Goa unit and drive method, goa circuit, and display device | |
| WO2010050262A1 (en) | Shift register circuit, display device and shift register circuit driving method | |
| CN110120200B (en) | Display device | |
| WO2016197531A1 (en) | Shift register unit and drive method therefor, gate drive circuit and display apparatus | |
| WO2016123991A1 (en) | Shift register and drive method therefor, grid drive circuit and display device | |
| WO2017092514A1 (en) | Shift register unit and drive method therefor, and display apparatus | |
| WO2016065834A1 (en) | Shift register unit and driving method therefor, shift register circuit and display device | |
| WO2013143316A1 (en) | Shift register unit, shift register circuit, array substrate and display device | |
| US10580375B2 (en) | Gate drive circuit | |
| TW201411631A (en) | Shift register and driving method thereof | |
| WO2019134369A1 (en) | Shift register unit and driving method thereof, gate driving circuit and display device | |
| TWI409787B (en) | Shift register with image retention release and method for image retention release | |
| CN110197697A (en) | Shift register, gate driving circuit and display equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |