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TW201801906A - Laminate manufacturing method and application thereof to produce a laminate having high heat resistance and capable of adequately removing an adhesive layer by grinding - Google Patents

Laminate manufacturing method and application thereof to produce a laminate having high heat resistance and capable of adequately removing an adhesive layer by grinding Download PDF

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TW201801906A
TW201801906A TW106119294A TW106119294A TW201801906A TW 201801906 A TW201801906 A TW 201801906A TW 106119294 A TW106119294 A TW 106119294A TW 106119294 A TW106119294 A TW 106119294A TW 201801906 A TW201801906 A TW 201801906A
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substrate
laminated body
layer
adhesive layer
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TWI713753B (en
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吉岡孝広
田村弘毅
今井洋文
増島正宏
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東京應化工業股份有限公司
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Abstract

The subjective of this invention is to produce a laminate having high heat resistance and capable of adequately removing an adhesive layer by grinding. The solution of the laminate manufacturing method comprises the following steps: an adhesive layer forming step for forming an adhesive layer (3) on a substrate (1); a lamination step for laminating the substrate (1) and a support plate (2); and a curing step of curing the adhesive layer (3) for heating a polymerizable resin ingredient to polymerize. The cured adhesive layer (3) has a Young's modulus of 2 GPa or more at 25 DEG C and a dynamic viscosity of 1000 Pa·s or more at 250 DEG C.

Description

層合體之製造方法,及其利用 Laminated manufacturing method and use thereof

本發明有關層合體之製造方法,及其利用。 The present invention relates to a method for manufacturing a laminate and its use.

作為包含半導體元件(電子零件)之半導體封裝(半導體裝置),已知有WLP(Wafer Level Package,晶圓等級封裝)等。WLP及PLP(Panel Level Package,面板等級封裝)等之半導體封裝,已知有將於裸晶端部具有之端子再配置於晶片區內之扇入型WLP(Fan-in Wafer Level Package)等之扇入型技術,與將端子再配置於晶片區域外之扇出型WLP(Fan-out Wafer Level Package)等之扇出型技術。尤其,扇出型技術係應用於將半導體元件配置於面板上並封裝化之扇出型PLP(Fan-out Panel Level Package),為了實現半導體裝置之積體化、薄型化及小型化等,如該等扇出型技術備受矚目。 As a semiconductor package (semiconductor device) including a semiconductor element (electronic component), a WLP (Wafer Level Package) is known. Semiconductor packages such as WLP and PLP (Panel Level Package) are known as fan-in WLP (Fan-in Wafer Level Package), etc., in which the terminals at the bare die end are relocated in the chip area. Fan-in technology and fan-out technology such as fan-out type WLP (Fan-out Wafer Level Package) in which terminals are relocated outside the chip area. In particular, the fan-out technology is a fan-out panel level package (PLP) in which semiconductor elements are arranged on a panel and packaged. In order to achieve the integration, thinness, and miniaturization of semiconductor devices, such as These fan-out technologies have attracted much attention.

例如,於專利文獻1中,記載有將光透過性之 支撐體與半導體晶圓經由設於支撐體側之光熱轉換層與接著層而貼合,對半導體晶圓進行處理後,自支撐體側照射放射能而使光熱轉換層分解,並將半導體晶圓自支撐體分離之方法。 For example, Patent Document 1 describes a method of transmitting light. The support and the semiconductor wafer are bonded together via a light-to-heat conversion layer and an adhesive layer provided on the support side. After the semiconductor wafer is processed, radiation is radiated from the support side to decompose the light-to-heat conversion layer, and the semiconductor wafer is decomposed. Method for separating self-supporting body.

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2004-64040號公報(2004年2月26日公開) [Patent Document 1] Japanese Patent Laid-Open No. 2004-64040 (published on February 26, 2004)

專利文獻1中記載之技術,係形成具備使用可機械剝離(peel)之黏著劑而形成之接著層之層合體並處理基板。因此,於高的溫度條件下處理基板時,有無法維持接著層與基板之密著性之問題。且,專利文獻1中,針對具備可藉由研削而較好地去除之接著層之層合體的製造方法並無任何揭示。 The technique described in Patent Document 1 is to form a laminate including an adhesive layer formed using a mechanically peelable adhesive, and to process a substrate. Therefore, when the substrate is processed under high temperature conditions, there is a problem that the adhesion between the adhesive layer and the substrate cannot be maintained. In addition, Patent Document 1 does not disclose any method for manufacturing a laminated body having a bonding layer that can be removed well by grinding.

本發明係鑑於上述問題點而完成者,其目的在於提供製造具備高耐熱性,且可藉由研削而較好地去除接著層之層合體之方法,以及其關聯技術。 The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a method for producing a laminate having high heat resistance and capable of removing an adhesive layer by grinding, and a related technology.

為了解決上述課題,本發明之層合體之製造方法係經由接著層使基板與支撐上述基板之支撐體層合而成之層合體之製造方法,其特徵為包含下述步驟:於上述基板及上述支撐體之至少一者上形成含有聚合性樹脂成分及聚合起始劑之上述接著層之接著層形成步驟,將上述基板與上述支撐體經由上述接著層而層合之層合步驟,及藉由加熱或曝光使上述聚合性樹脂成分聚合而使上述接著層硬化之硬化步驟,硬化之上述接著層於25℃下之楊氏模數為2GPa以上,於250℃下之動態黏度為1000Pa.s以上。 In order to solve the above-mentioned problems, the method for manufacturing a laminate of the present invention is a method for manufacturing a laminate in which a substrate and a support that supports the substrate are laminated via an adhesive layer, and is characterized by including the following steps: the substrate and the support A bonding layer forming step of forming the bonding layer containing a polymerizable resin component and a polymerization initiator on at least one of the substrates, a laminating step of laminating the substrate and the support through the bonding layer, and heating Or the hardening step of polymerizing the polymerizable resin component by exposure to harden the adhesive layer, and the Young's modulus of the cured adhesive layer at 25 ° C is 2 GPa or more, and the dynamic viscosity at 250 ° C is 1000 Pa. s or more.

又,本發明之層合體,其係經由接著層使基板與支撐上述基板之支撐體層合而成之層合體,其特徵為上述接著層係聚合性樹脂成分係藉由利用熱或光而開始聚合之聚合起始劑聚合而成之硬化物,上述接著層於25℃下之楊氏模數為2GPa以上,於250℃下之動態黏度為1000Pa.s以上。 The laminated body of the present invention is a laminated body in which a substrate and a support for supporting the substrate are laminated via an adhesive layer, wherein the adhesive polymerizable resin component of the adhesive layer is polymerized by using heat or light. The hardened product polymerized by the polymerization initiator, the Young's modulus of the above adhesive layer at 25 ° C is 2 GPa or more, and the dynamic viscosity at 250 ° C is 1000 Pa. s or more.

又,本發明之接著劑組成物,其係用以形成經由接著層使基板與支撐上述基板之支撐體層合而成之層合體中之該接著層之接著劑組成物,其特徵為含有聚合性樹脂成分及藉由熱或光而開始聚合之聚合起始劑,上述聚合性樹脂成分藉由上述聚合起始劑聚合而成之硬化物於25℃下之楊氏模數為2GPa以上,於250℃下之動態黏度為1000Pa.s以上。 In addition, the adhesive composition of the present invention is an adhesive composition for forming an adhesive layer in a laminate in which a substrate and a support for supporting the substrate are laminated via an adhesive layer, and is characterized by containing a polymerizable property. A resin component and a polymerization initiator that starts polymerization by heat or light. The cured product of the polymerizable resin component polymerized by the polymerization initiator has a Young's modulus at 25 ° C of 2 GPa or more, at 250 GPa. The dynamic viscosity at ℃ is 1000Pa. s or more.

依據本發明,可發揮可提供具備高耐熱性且可藉由研削而較好地去除接著層之層合體之製造方法及其關聯技術之效果。 According to the present invention, it is possible to exert the effect of providing a method of manufacturing a laminated body having high heat resistance and a good removal of the adhesive layer by grinding, and related technologies.

1‧‧‧基板 1‧‧‧ substrate

2‧‧‧支撐板 2‧‧‧ support plate

3‧‧‧接著層 3‧‧‧ Adjacent layer

4‧‧‧分離層 4‧‧‧ separation layer

5‧‧‧再配線層 5‧‧‧ redistribution layer

6‧‧‧密封材 6‧‧‧sealing material

7‧‧‧密封基板 7‧‧‧Sealed substrate

20‧‧‧研磨機 20‧‧‧Grinding machine

30、31、32‧‧‧層合體 30, 31, 32‧‧‧ laminated

圖1係說明本發明一實施形態(第一實施形態)之層合體之製造方法及基板處理方法之概略的圖。 FIG. 1 is a diagram illustrating the outline of a method for manufacturing a laminated body and a method for processing a substrate according to an embodiment (first embodiment) of the present invention.

圖2係說明本發明另一實施形態(第二實施形態)之層合體之製造方法及基板處理方法之概略的圖。 FIG. 2 is a diagram illustrating the outline of a method for manufacturing a laminated body and a substrate processing method according to another embodiment (second embodiment) of the present invention.

圖3係說明本發明一變化例之層合體之製造方法及基板處理方法之概略的圖。 FIG. 3 is a schematic diagram illustrating a method for manufacturing a laminate and a method for processing a substrate according to a modification of the present invention.

本發明之層合體之製造方法係製造硬化後之接著層於25℃下之楊氏模數為2GPa以上,於250℃下之動態黏度為1000Pa.s以上之層合體之方法。 The manufacturing method of the laminated body of the present invention is to make the Young's modulus of the adhesive layer after hardening at 25 ° C is 2 GPa or more, and the dynamic viscosity at 250 ° C is 1000 Pa. The method of laminated body above s.

藉此,可形成具備高耐熱性且可藉由研削而較好地去除接著層之層合體,且可對基板進行各種處理。因此,可例如基於所謂扇入型技術,較好地製造具備元件、密封元件之密封材、安裝該元件之Si中介板(矽晶圓)之密封基板。且,亦可基於所謂扇出型技術,較好地製造具備元件、密封元件之密封材、及再配線層之密封基板。 Thereby, it is possible to form a laminate having high heat resistance and capable of removing the adhesive layer by grinding, and to perform various processes on the substrate. Therefore, for example, based on a so-called fan-in technology, a sealing substrate including an element, a sealing element, and a Si interposer (silicon wafer) on which the element is mounted can be preferably manufactured. In addition, based on the so-called fan-out technology, a sealing substrate including an element, a sealing material for a sealing element, and a redistribution layer can be manufactured satisfactorily.

<層合體之製造方法(第一實施形態)> <Manufacturing method of laminated body (first embodiment)>

使用圖1之(a)~(c),針對本發明之一實施形態(第一實施形態)之層合體之製造方法詳細說明。本實施形態之層合體之製造方法包含分離層形成步驟、接著層形成步驟、硬化步驟及層合步驟。又,分離層形成步驟(圖1之(a))與接著層形成步驟(圖1之(b))若在層合步驟及硬化步驟(圖1之(c))之前,則任一者先進行均可,亦可同時進行。且,本實施形態中,係於層合步驟之後進行硬化步驟。 The manufacturing method of the laminated body of one Embodiment (1st Embodiment) of this invention is demonstrated in detail using (a)-(c) of FIG. The manufacturing method of the laminated body of this embodiment includes a separation layer formation step, a subsequent layer formation step, a hardening step, and a lamination step. In addition, if the separation layer formation step (FIG. 1 (a)) and the subsequent layer formation step (FIG. 1 (b)) precede the lamination step and the hardening step (FIG. 1 (c)), either It can be done simultaneously or simultaneously. In this embodiment, the curing step is performed after the lamination step.

[分離層形成步驟] [Separation layer forming step]

如圖1之(a)所示,分離層形成步驟中,於光可透過之支撐板2之一平面部上形成藉由照射光而變質之分離層4。 As shown in FIG. 1 (a), in the separation layer forming step, a separation layer 4 which is deteriorated by irradiation of light is formed on a flat portion of a support plate 2 through which light can pass.

[支撐板2] [Support plate 2]

支撐板(支撐體)2係支持基板1之支撐體。因此,作為支撐板2,只要於基板1之薄化、搬送、安裝等製程時,具有用以防止基板1破損或變形之必要強度即可。又,支撐板2若可使用以使分離層4變質之光透過即可。基於該等觀點,支撐板2可使用由玻璃、矽或丙烯酸系樹脂所成之支撐體等。 The support plate (support body) 2 is a support body that supports the substrate 1. Therefore, as the support plate 2, as long as the substrate 1 is thinned, transported, and mounted, it has the strength necessary to prevent the substrate 1 from being damaged or deformed. In addition, the support plate 2 may be used so long as it allows the light of the separation layer 4 to deteriorate. From these viewpoints, a support made of glass, silicon, or acrylic resin can be used as the support plate 2.

[分離層4] [Separation layer 4]

分離層4係藉由照射光而變質之層。藉由透過支撐板2對分離層4照射光而使分離層4變質,可將支撐板2自基板1分離。 The separation layer 4 is a layer that is deteriorated by irradiation with light. By irradiating the separation layer 4 with light through the support plate 2 to modify the separation layer 4, the support plate 2 can be separated from the substrate 1.

又,本說明書中,所謂「變質」意指分離層稍受外力即可被破壞之狀態,或成為與分離層接觸之層的接著力降低狀態之現象。作為因吸收光而產生之分離層變質之結果,分離層失去接受光照射前之強度或接著性。最終,因吸收光而分離層變脆。所謂分離層之變質可為分離層因吸收之光能量而產生分解、立體配置之變化或官能基解離等。分離層之變質係以吸收光之結果所產生。 In the present specification, the term "deterioration" means a state in which the separation layer can be broken by a slight external force, or a phenomenon in which the adhesion force of the layer in contact with the separation layer is reduced. As a result of the deterioration of the separation layer due to the absorption of light, the separation layer loses its strength or adhesion before receiving light irradiation. Eventually, the separation layer becomes brittle by absorbing light. The so-called metamorphism of the separation layer may be the decomposition of the separation layer due to the absorbed light energy, the change in the three-dimensional configuration, or the dissociation of functional groups. The metamorphism of the separation layer is caused by the absorption of light.

因此,例如僅拉起支撐板使分離層如破壞般變質,可容易地分離支撐板與基板。更具體而言,例如藉由支撐體分離裝置等,將層合體中之基板及支撐板之一者固定於載置台,藉由具備吸附手段之吸附墊(吸附部)等抱持另一者並拉起,而將支撐板與基板分離,或將支撐板之周緣部分端面之倒角部位藉由具備夾具(爪部)等之分離板予以把持而施加力,而將基板與支撐板分離即可。且,例如藉由具備供給用以剝離接著劑之剝離液的剝離手段之支撐體分離裝置,自層合體之基板剝離支撐板即可。藉由該剝離手段,對層合體之接著層周端部之至少一部分供給剝離液,使層合體之接著層膨潤,使該接著劑層膨潤後,以力集中於分離層之方式,可對基板與支撐板施加力。因此,可較好地使基板與支撐板分離。 Therefore, for example, only the support plate is pulled up and the separation layer is deteriorated as if destroyed, and the support plate and the substrate can be easily separated. More specifically, for example, one of the substrate and the support plate in the laminate is fixed to a mounting table by a support separation device or the like, and the other is held by an adsorption pad (adsorption section) having an adsorption means and the like, and Pull up to separate the support plate from the substrate, or the chamfered part of the end face of the peripheral portion of the support plate is held by a separation plate with a clamp (claw) or the like to apply force, and the substrate and the support plate can be separated. . In addition, for example, a support separation device provided with a peeling means for supplying a peeling liquid for peeling the adhesive may peel the support plate from the substrate of the laminate. By this peeling means, a peeling liquid is supplied to at least a part of the peripheral end portion of the adhesive layer of the laminate to swell the adhesive layer of the laminate. After the adhesive layer is swollen, the substrate can be concentrated on the separation layer by force. Apply force to the support plate. Therefore, the substrate can be better separated from the support plate.

對層合體施加之力只要根據層合體之大小等適當調整即可,並未限定,但例如若為面積40000~70000mm2左右之層合體,則藉由施加0.1~5kgf左右之力,可較好地使基板與支撐板分離。 The force to be applied to the laminated body may be adjusted as appropriate according to the size of the laminated body, and is not limited. For example, if the laminated body has an area of about 40,000 to 70,000 mm 2 , a force of about 0.1 to 5 kgf may be used. Ground to separate the substrate from the support plate.

又,於分離層4與支撐板2之間亦可進而形成其他層。該情況下,其他層由光可透過之材料構成即可。藉此,可不妨礙光朝分離層4入射,適當地追加具有較佳性質等之層。可使用之光波長係隨構成分離層4之材料種類而異。因此,構成其他層之材料並無必要使所有光透過,而可自可使能使構成分離層4之材料變質之波長的光透過之材料中適當選擇。 Further, another layer may be further formed between the separation layer 4 and the support plate 2. In this case, the other layers may be made of a light-transmissive material. This makes it possible to appropriately add a layer having better properties and the like without hindering the light from entering the separation layer 4. The usable light wavelength varies depending on the kind of material constituting the separation layer 4. Therefore, it is not necessary for the materials constituting the other layers to transmit all light, but it is possible to appropriately select from materials that can transmit light of a wavelength capable of deteriorating the material constituting the separation layer 4.

又,分離層4較好僅由具有吸收光之構造的材料形成,但在不損及本發明之本質特性之範圍內,亦可添加不具有吸收光之構造的材料形成分離層4。又,分離層4之對向於接著層3之側的面較好為平坦(不形成凹凸),藉此,分離層4之形成容易進行,且貼附時亦可均一貼附。 The separation layer 4 is preferably formed only of a material having a structure that absorbs light, but the separation layer 4 may be formed by adding a material that does not have a structure that absorbs light to the extent that the essential characteristics of the present invention are not impaired. In addition, the surface of the separation layer 4 facing the side of the adhesive layer 3 is preferably flat (no unevenness is formed), so that the formation of the separation layer 4 can be easily performed, and uniform adhesion can also be performed at the time of attachment.

用以於支撐板2上形成分離層4之方法,只要對應於所採用之分離層材料適當選擇即可,例如可為藉由旋轉塗佈法等之習知方法塗佈分離層形成用組成物之形態,亦可為藉由化學氣相成長(CVD)法等形成之形態。 The method for forming the separation layer 4 on the support plate 2 may be appropriately selected in accordance with the material of the separation layer to be used. For example, the composition for forming the separation layer may be applied by a conventional method such as a spin coating method. The form may be a form formed by a chemical vapor growth (CVD) method or the like.

分離層4之厚度較好為例如0.05μm以上、50μm以下之範圍內,更好為0.3μm以上、1μm以下之範圍內。分離層4之厚度若侷限於0.05μm以上、50μm以下之範圍, 則藉由短時間之光照射及低能量光之照射,可使分離層4產生期望之變質。且,分離層4之厚度,基於生產性之觀點較好侷限於1μm以下之範圍。 The thickness of the separation layer 4 is preferably in a range of, for example, 0.05 μm or more and 50 μm or less, and more preferably in a range of 0.3 μm or more and 1 μm or less. If the thickness of the separation layer 4 is limited to a range of 0.05 μm or more and 50 μm or less, Then, by short-time light irradiation and low-energy light irradiation, the separation layer 4 can have a desired deterioration. The thickness of the separation layer 4 is preferably limited to a range of 1 μm or less from the viewpoint of productivity.

以下針對用以形成分離層4之材料詳細說明。 The materials used to form the separation layer 4 are described in detail below.

(氟碳) (Fluorocarbon)

分離層4亦可由氟碳形成。藉由分離層4由氟碳構成,可成為因吸收光而變質,其結果,失去接受光照射前之強度或接著性。因此,稍施加外力(例如拉起支撐板2等)即可破壞分離層4,可容易地使支撐板2與基板1分離。構成分離層4之氟碳可較好地藉由電漿CVD(化學氣相堆積)法成膜。 The separation layer 4 may be formed of fluorocarbon. Since the separation layer 4 is made of fluorocarbon, it can be deteriorated by absorbing light, and as a result, the strength or adhesiveness before receiving light irradiation is lost. Therefore, a slight external force (for example, pulling up the support plate 2 or the like) can break the separation layer 4, and the support plate 2 can be easily separated from the substrate 1. The fluorocarbon constituting the separation layer 4 can be preferably formed into a film by a plasma CVD (chemical vapor deposition) method.

氟碳根據其種類而定,可吸收具有固有範圍之波長的光。藉由以分離層4中所用之氟碳所吸收之範圍之波長的光照射分離層4,可適當使氟碳變質。又,分離層4之光吸收率較好為80%以上。 Fluorocarbon, depending on its type, can absorb light with a wavelength in its inherent range. By irradiating the separation layer 4 with light having a wavelength in a range absorbed by the fluorocarbon used in the separation layer 4, the fluorocarbon can be appropriately modified. The light absorption rate of the separation layer 4 is preferably 80% or more.

作為照射至分離層4之光,只要根據氟碳可吸收之波長,適當使用例如YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射,色素雷射等之液體雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射,半導體雷射、自由電子雷射等之雷射光,或非雷射光即可。可使氟碳變質之波長並不限於該等者,可使用例如600nm以下之範圍的波長。 As the light irradiated to the separation layer 4, a solid laser such as a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, an LD laser, or an optical fiber laser is appropriately used depending on the wavelength that can be absorbed by the fluorocarbon. Liquid lasers such as pigment lasers, gas lasers such as CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers, semiconductor lasers, free electron lasers, etc. Laser light is sufficient. The wavelength at which the fluorocarbon can be deteriorated is not limited to these, and a wavelength in a range of 600 nm or less can be used, for example.

(其重複單位中含有具有光吸收性之構造的聚合物) (The repeating unit contains a polymer having a light absorbing structure)

分離層4亦可含有其重複單位中含有具有光吸收性之構造的聚合物。該聚合物接受光照射而變質。該聚合物之變質係因上述構造吸收所照射之光而產生。分離層4因聚合物變質之結果,而喪失接受光照射前之強度或接著性。因此,稍施加外力(例如拉起支撐板2等)即可破壞分離層4,可容易地使支撐板2與基板1分離。 The separation layer 4 may contain a polymer having a light-absorbing structure in its repeating unit. The polymer is deteriorated upon exposure to light. The deterioration of the polymer is caused by the above structure absorbing the irradiated light. As a result of the deterioration of the polymer, the separation layer 4 loses its strength or adhesiveness before receiving light irradiation. Therefore, a slight external force (for example, pulling up the support plate 2 or the like) can break the separation layer 4, and the support plate 2 can be easily separated from the substrate 1.

具有光吸收性之上述構造係吸收光並使含有該構造作為重複單位之聚合物變質之化學構造。該構造為例如由取代或非取代之苯環、縮合環或雜環所成之含有共軛π電子系之原子團。更詳言之,該構造可為卡德(cardo)構造、或存在於上述聚合物側鏈之二苯甲酮構造、二苯硫醚構造、二苯基碸構造(雙苯基碸構造)、二苯基構造或二苯基胺構造。 The aforementioned structure having light absorption is a chemical structure that absorbs light and deteriorates a polymer containing the structure as a repeating unit. This structure is, for example, a conjugated π-electron-containing atomic group formed of a substituted or unsubstituted benzene ring, a condensed ring, or a heterocyclic ring. More specifically, the structure may be a cardo structure, or a benzophenone structure, a diphenylsulfide structure, a diphenylfluorene structure (bisphenylfluorene structure), Diphenyl structure or diphenylamine structure.

上述構造存在於上述聚合物側鏈時,該構造可由以下式表示。 When the structure is present in the polymer side chain, the structure can be represented by the following formula.

Figure TW201801906AD00001
Figure TW201801906AD00001

(式中,R分別獨立為烷基、芳基、鹵基、羥基、酮基、亞碸基、碸基或N(R4)(R5)(此處,R4及R5分別獨立為氫原子或碳數1~5之烷基),Z為不存在或為-CO-、-SO2-、-SO-或-NH-,n為0或1~5之整數)。 (Wherein R is independently alkyl, aryl, halo, hydroxy, keto, fluorenyl, fluorenyl, or N (R 4 ) (R 5 ) (here, R 4 and R 5 are each independently A hydrogen atom or an alkyl group having 1 to 5 carbon atoms), Z is absent or is -CO-, -SO 2- , -SO-, or -NH-, and n is an integer of 0 or 1 to 5).

又,上述聚合物中,含有例如以下式中由(a)~(d)之任一者表示之重複單位,或由(e)表示、或於其主鏈中含有(f)之構造。 In addition, the polymer contains, for example, a repeating unit represented by any one of (a) to (d) in the following formula, or a structure represented by (e) or containing (f) in its main chain.

Figure TW201801906AD00002
Figure TW201801906AD00002

(式中,l為1以上之整數,m為0或1~2之整數,X於(a)~(e)中,為上述之“化1”所示之式之任一者,於(f)中為上述之“化1”所示之式之任一者,或不存在,Y1及Y2分別獨立為-CO-或-SO2-,1較好為10以下之整數)。 (In the formula, l is an integer of 1 or more, m is an integer of 0 or 1 to 2, and X in (a) to (e) is any one of the formulas shown in "Chemical 1" above, in ( f) is any one of the formulas shown in "Chemical Formula 1" above, or does not exist, and Y 1 and Y 2 are each independently -CO- or -SO 2- , and 1 is preferably an integer of 10 or less).

上述之“化1”所示之苯環、縮合環及雜環之例,舉例為苯基、取代苯基、苄基、取代苄基、萘基、取代萘基、 蒽基、取代蒽基、蒽醌、取代蒽醌、吖啶、經取代吖啶、偶氮苯、取代偶氮苯、螢光胺(fluorime)、取代螢光胺、fluorimon、取代fluorimon、咔唑、取代咔唑、N-烷基咔唑、苯并呋喃、取代苯并呋喃、菲、取代菲、芘及取代芘。例示之取代基進而具有取代基時,其取代基係選自例如烷基、芳基、鹵素原子、烷氧基、硝基、醛類、氰基、醯胺、二烷基胺基、磺醯胺、醯亞胺、羧酸、羧酸酯、磺酸、磺酸酯、烷基胺基及芳基胺基。 Examples of the benzene ring, condensed ring, and heterocyclic ring shown in the above “Chem. 1” include phenyl, substituted phenyl, benzyl, substituted benzyl, naphthyl, substituted naphthyl, Anthracenyl, substituted anthracenyl, anthraquinone, substituted anthraquinone, acridine, substituted acridine, azobenzene, substituted azobenzene, fluorescent, substituted fluoramine, fluorimon, substituted fluorimon, carbazole , Substituted carbazole, N-alkylcarbazole, benzofuran, substituted benzofuran, phenanthrene, substituted phenanthrene, fluorene, and substituted fluorene. When the exemplified substituent further has a substituent, the substituent is selected from, for example, an alkyl group, an aryl group, a halogen atom, an alkoxy group, a nitro group, an aldehyde, a cyano group, a sulfonylamine, a dialkylamino group, and a sulfonium Amines, amines, carboxylic acids, carboxylic acid esters, sulfonic acids, sulfonic acid esters, alkylamines and arylamines.

上述之“化1”所示之取代基中,作為具有兩個苯基之第5個取代基且Z為-SO2-時之例列舉為雙(2,4-二羥基苯基)碸、雙(3,4-二羥基苯基)碸、雙(3,5-二羥基苯基)碸、雙(3,6-二羥基苯基)碸、雙(4-羥基苯基)碸、雙(3-羥基苯基)碸、雙(2-羥基苯基)碸、及雙(3,5-二甲基-4-羥基苯基)碸等。 Among the substituents represented by the above-mentioned "Chem. 1", examples of the case where the fifth substituent having two phenyl groups and Z is -SO 2 -are bis (2,4-dihydroxyphenyl) fluorene, Bis (3,4-dihydroxyphenyl) fluorene, bis (3,5-dihydroxyphenyl) fluorene, bis (3,6-dihydroxyphenyl) fluorene, bis (4-hydroxyphenyl) fluorene, bis (3-hydroxyphenyl) fluorene, bis (2-hydroxyphenyl) fluorene, and bis (3,5-dimethyl-4-hydroxyphenyl) fluorene.

上述之“化1”所示之取代基中,作為具有兩個苯基之第5個取代基且Z為-SO-時之例列舉為雙(2,3-二羥基苯基)亞碸、雙(5-氯-2,3-二羥基苯基)亞碸、雙(2,4-二羥基苯基)亞碸、雙(2,4-二羥基-6-甲基苯基)亞碸、雙(5-氯-2,4-二羥基苯基)亞碸、雙(2,5-二羥基苯基)亞碸、雙(3,4-二羥基苯基)亞碸、雙(3,5-二羥基苯基)亞碸、雙(2,3,4-三羥基苯基)亞碸、雙(2,3,4-三羥基-6-甲基苯基)-亞碸、雙(5-氯-2,3,4-三羥基苯基)亞碸、雙(2,4,6-三羥基苯基)亞碸、及雙(5-氯-2,4,6-三羥基苯基)亞碸等。 Among the substituents represented by the above-mentioned "Chem. 1", examples of the case where the fifth substituent having two phenyl groups and Z is -SO- are bis (2,3-dihydroxyphenyl) sulfenyl, Bis (5-chloro-2,3-dihydroxyphenyl) fluorene, bis (2,4-dihydroxyphenyl) fluorene, bis (2,4-dihydroxy-6-methylphenyl) fluorene , Bis (5-chloro-2,4-dihydroxyphenyl) fluorene, bis (2,5-dihydroxyphenyl) fluorene, bis (3,4-dihydroxyphenyl) fluorene, bis (3 , 5-dihydroxyphenyl) fluorene, bis (2,3,4-trihydroxyphenyl) fluorene, bis (2,3,4-trihydroxy-6-methylphenyl) -fluorene, bis (5-chloro-2,3,4-trihydroxyphenyl) fluorene, bis (2,4,6-trihydroxyphenyl) fluorene, and bis (5-chloro-2,4,6-trihydroxy) Phenyl) sulfene and the like.

上述之“化1”所示之取代基中,作為具有兩個苯基之第5個取代基且Z為-C(=O)-時之例列舉為2,4-二羥基二苯甲酮、2,3,4-三羥基二苯甲酮、2,2’,4,4’-四羥基二苯甲酮、2,2',5,6'-四羥基二苯甲酮、2-羥基-4-甲氧基二苯甲酮、2-羥基-4-辛氧基二苯甲酮、2-羥基-4-十二烷氧基二苯甲酮、2,2’-二羥基-4-甲氧基二苯甲酮、2,6-二羥基-4-甲氧基二苯甲酮、2,2’-二羥基-4,4’-二甲氧基二苯甲酮、4-胺基-2’-羥基二苯甲酮、4-二甲胺基-2’-羥基二苯甲酮、4-二乙胺基-2’-羥基二苯甲酮、4-二甲胺基-4’-甲氧基-2’-羥基二苯甲酮、4-二甲胺基-2’,4’-二羥基二苯甲酮、及4-二甲胺基-3’,4’-二羥基二苯甲酮等。 Among the substituents represented by the above-mentioned "Chem. 1", as an example when the fifth substituent having two phenyl groups and Z is -C (= O)-, 2,4-dihydroxybenzophenone is listed. , 2,3,4-trihydroxybenzophenone, 2,2 ', 4,4'-tetrahydroxybenzophenone, 2,2', 5,6'-tetrahydroxybenzophenone, 2- Hydroxy-4-methoxybenzophenone, 2-hydroxy-4-octyloxybenzophenone, 2-hydroxy-4-dodecyloxybenzophenone, 2,2'-dihydroxy- 4-methoxybenzophenone, 2,6-dihydroxy-4-methoxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxybenzophenone, 4 -Amino-2'-hydroxybenzophenone, 4-dimethylamino-2'-hydroxybenzophenone, 4-diethylamino-2'-hydroxybenzophenone, 4-dimethylamine -4'-methoxy-2'-hydroxybenzophenone, 4-dimethylamino-2 ', 4'-dihydroxybenzophenone, and 4-dimethylamino-3', 4 '-Dihydroxybenzophenone and the like.

上述構造存在於上述聚合物之側鏈時,含上述構造之重複單位於上述聚合物中所佔之比例係使分離層4之光透過率成為0.001%以上、10%以下之範圍內。若以使該比例侷限在該範圍內之方式調製聚合物,則分離層4可充分吸收光而能確實且迅速地變質。亦即,可輕易地自基板1去除支撐板2,且可縮短該去除必要之光照射時間。 When the structure exists in the side chain of the polymer, the proportion of the repeating unit containing the structure in the polymer is such that the light transmittance of the separation layer 4 is within a range of 0.001% to 10%. When the polymer is prepared so that the ratio is limited to the range, the separation layer 4 can sufficiently absorb light and can be surely and rapidly deteriorated. That is, the support plate 2 can be easily removed from the substrate 1, and the light irradiation time necessary for the removal can be shortened.

上述構造依據其種類之選擇可吸收具有期望範圍之波長之光。例如,上述構造可吸收之光之波長更好為100nm以上、2000nm以下之範圍內。該範圍中,上述構造可吸收之光之波長為更短波長側,例如100nm以上、500nm以下之範圍內。例如,上述構造可較好藉由吸收具有約300nm以上、370nm以下之範圍內之波長之紫外光,而使包含該構造之聚合物變質。 The above-mentioned structure can absorb light having a wavelength in a desired range depending on the selection of its kind. For example, the wavelength of light that can be absorbed by the structure is more preferably within a range of 100 nm to 2000 nm. In this range, the wavelength of the light that can be absorbed by the structure is on the shorter wavelength side, for example, in the range of 100 nm or more and 500 nm or less. For example, the structure described above can preferably deteriorate a polymer containing the structure by absorbing ultraviolet light having a wavelength in a range of approximately 300 nm to 370 nm.

上述構造可吸收之光為自例如高壓水銀燈(波長:254nm以上、436nm以下)、KrF準分子雷射(波長:248nm)、ArF準分子雷射(波長:193nm)、F2準分子雷射(波長:157nm)、XeCl雷射(波長:308nm)、XeF雷射(波長:351nm)或者固體UV雷射(波長:355nm)發出之光,或為g線(波長:436nm)、h線(波長:405nm)或i線(波長:365nm)等。 The light that can be absorbed by the above structure is, for example, from a high-pressure mercury lamp (wavelength: 254 nm or more and 436 nm or less), KrF excimer laser (wavelength: 248 nm), ArF excimer laser (wavelength: 193 nm), F 2 excimer laser ( Wavelength: 157nm, XeCl laser (wavelength: 308nm), XeF laser (wavelength: 351nm) or solid UV laser (wavelength: 355nm), or g-line (wavelength: 436nm), h-line (wavelength : 405 nm) or i-line (wavelength: 365 nm).

上述分離層4含有包含上述構造作為重複單位之聚合物,但分離層4可進而含有上述聚合物以外之成分。該成分列舉為填料、可塑劑、及可提高支撐板2之剝離性之成分等。該等成分係自不妨礙由上述構造之光吸收、及聚合物之變質或可促進該吸收及變質之過去習知物質或材料適當選擇。 The separation layer 4 contains a polymer including the structure as a repeating unit, but the separation layer 4 may further contain a component other than the polymer. This component is exemplified by a filler, a plasticizer, and a component capable of improving the peelability of the support plate 2. These components are appropriately selected from the conventionally known substances or materials that do not hinder the light absorption by the above-mentioned structure and the deterioration of the polymer or can promote the absorption and deterioration.

(無機物) (Inorganic)

分離層4亦可由無機物構成。分離層4藉由以無機物構成,而可藉由吸收光而變質,其結果,喪失接受光照射前之強度或接著性。因此,藉由稍施加外力(例如,拉起支撐板2等)即可破壞分離層4,使支撐板2與基板1容易地分離。 The separation layer 4 may be made of an inorganic substance. The separation layer 4 is made of an inorganic substance, and can be deteriorated by absorbing light. As a result, the strength or adhesiveness before receiving light irradiation is lost. Therefore, the separation layer 4 can be broken by applying a slight external force (for example, pulling up the support plate 2 and the like), and the support plate 2 and the substrate 1 can be easily separated.

上述無機物只要為藉由吸收光而變質之構成即可,例如可適當地使用由金屬、金屬化合物及碳所組成之群選出之一種以上之無機物。所謂金屬化合物意指含金屬原子之化合物,例如可為金屬氧化物、金屬氮化物。該 無機物之例示並未限定於此,但可列舉為例如由金、銀、銅、鐵、鎳、鋁、鈦、鉻、SiO2、SiN、Si3N4、TiN、及碳所組成之群選出之一種以上之無機物。又,所謂碳亦為可包含碳之同位素之概念,例如可為金剛石、富勒烯、類金剛石碳、碳奈米管等。 The inorganic substance may have a structure that is deteriorated by absorbing light. For example, one or more inorganic substances selected from the group consisting of a metal, a metal compound, and carbon may be used as appropriate. The metal compound means a compound containing a metal atom, and may be, for example, a metal oxide or a metal nitride. Examples of the inorganic substance are not limited thereto, and examples thereof include a group consisting of gold, silver, copper, iron, nickel, aluminum, titanium, chromium, SiO 2 , SiN, Si 3 N 4 , TiN, and carbon. One or more selected inorganic substances. In addition, the so-called carbon is also a concept that can include carbon isotopes, and examples thereof include diamond, fullerene, diamond-like carbon, and carbon nanotubes.

上述無機物係依據其種類而吸收具有固有範圍之波長之光。藉由使分離層4中使用之無機物所吸收之範圍的波長光照射至分離層4,可使上述無機物適當變質。 The inorganic substance absorbs light having a wavelength in an inherent range depending on the type. By irradiating the separation layer 4 with wavelength light in a range absorbed by the inorganic substance used in the separation layer 4, the inorganic substance can be appropriately modified.

作為對由無機物所成之分離層4照射之光,只要對應於上述無機物可吸收之波長,適當使用例如由YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等固體雷射,色素雷射等液體雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等氣體雷射,半導體雷射、自由電子雷射等雷射光,或非雷射光即可。 As the light irradiating the separation layer 4 made of an inorganic substance, as long as it corresponds to a wavelength that the inorganic substance can absorb, for example, a YAG laser, a ruby laser, a glass laser, a YVO 4 laser, an LD laser, and an optical fiber are appropriately used. Solid lasers such as lasers, liquid lasers such as pigment lasers, gas lasers such as CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers, semiconductor lasers, free electron lasers, and other laser light , Or non-laser light.

由無機物所成之分離層4可藉由例如濺鍍、化學蒸鍍(CVD)、電鍍、電漿CVD、旋轉塗佈等習知技術,於支撐板2上形成。由無機物所成之分離層4之厚度並無特別限制,只要是可充分吸收使用之光之膜厚即可,但更好為例如0.05μm以上、10μm以下之範圍內之膜厚。又,亦可預先於由構成分離層4之無機物所成之無機膜(例如,金屬膜)之兩面或單面上塗佈接著劑,並貼附於支撐板2上。 The separation layer 4 made of an inorganic substance can be formed on the support plate 2 by conventional techniques such as sputtering, chemical vapor deposition (CVD), electroplating, plasma CVD, and spin coating. The thickness of the separation layer 4 made of an inorganic substance is not particularly limited as long as it is a film thickness that can sufficiently absorb the light used, but it is more preferably a film thickness in the range of 0.05 μm or more and 10 μm or less, for example. In addition, an adhesive may be applied to both sides or one side of an inorganic film (for example, a metal film) made of an inorganic substance constituting the separation layer 4 in advance, and the adhesive may be attached to the support plate 2.

又,使用金屬膜作為分離層4時,依據分離層 4之膜質、雷射光源之種類、雷射輸出等條件,能引起雷射之反射或使膜帶電等。因此,較好藉由將抗反射膜或抗靜電膜設置於分離層4之上下或其一面上,而實現該等之對策。 When a metal film is used as the separation layer 4, The film quality of 4, the type of laser light source, and laser output conditions can cause laser reflection or charge the film. Therefore, it is preferable to implement such countermeasures by arranging an antireflection film or an antistatic film on or under the separation layer 4 or on one side thereof.

(具有紅外線吸收性之構造之化合物) (Compound with infrared absorbing structure)

分離層4亦可藉由具有紅外線吸收性之構造之化合物形成。該化合物係藉由吸收紅外線而變質。分離層4於化合物變質之結果,喪失接受紅外線照射前之強度或接著性。因此,藉由稍施加外力(例如,拉起支撐板2等)即可破壞分離層4,可使支撐板2與基板1容易地分離。 The separation layer 4 may be formed of a compound having a structure having infrared absorption. This compound deteriorates by absorbing infrared rays. As a result of the deterioration of the compound, the separation layer 4 loses its strength or adhesiveness before receiving infrared radiation. Therefore, the separation layer 4 can be broken by applying a slight external force (for example, pulling up the support plate 2 or the like), and the support plate 2 can be easily separated from the substrate 1.

具有紅外線吸收性之構造或包含具有紅外線吸收性之構造之化合物可為例如烷、烯(乙烯基、反式、順式、亞乙烯、三取代、四取代、共軛、累積多烯(cumulene)、環式)、炔(單取代、二取代)、單環式芳香族(苯、單取代、二取代、三取代)、醇及酚類(自由OH、分子內氫鍵、分子間氫鍵、飽和二級、飽和三級、不飽和二級、不飽和三級)、縮醛、縮酮、脂肪族醚、芳香族醚、乙烯基醚、環氧乙烷環醚、過氧化物醚、酮類、二烷基羰基、芳香族羰基、1,3-二酮之烯醇、鄰-羥基芳基酮、二烷基醛、芳香族醛、碳酸(二聚物、碳酸陰離子)、甲酸酯、乙酸酯、共軛酯、非共軛酯、芳香族酯、內酯(β-、γ-、δ-)、脂肪族鹽酸鹽、芳香族鹽酸鹽、酸酐(共軛、非共軛、環式、非環式)、一級醯胺、 二級醯胺、內醯胺、一級胺(脂肪族、芳香族)、二級胺(脂肪族、芳香族)、三級胺(脂肪族、芳香族)、一級胺鹽、二級胺鹽、三級胺鹽、銨離子、脂肪族腈、芳香族腈、羧醯亞胺、脂肪族異腈、芳香族異腈、異氰酸酯、硫代氰酸酯、脂肪族異硫代氰酸酯、芳香族異硫代氰酸酯、脂肪族硝基化合物、芳香族硝基化合物、硝基胺、亞硝基胺、硝酸酯、亞硝酸酯、亞硝基鍵(脂肪族、芳香族、單體、二聚物)、硫醇及噻吩以及硫醇酸等硫化合物,硫代羰基、亞碸、碸、磺醯氯、一級磺醯胺、二級磺醯胺、硫酸酯、碳-鹵素鍵、Si-A1鍵(A1為H、C、O或鹵素)、P-A2鍵(A2為H、C或O)、或Ti-O鍵。 The structure having an infrared absorbing structure or a compound containing a structure having an infrared absorbing property may be, for example, an alkane, an olefin (vinyl, trans, cis, vinylene, tri-substituted, tetra-substituted, conjugated, cumulene) , Cyclic), alkyne (monosubstituted, disubstituted), monocyclic aromatic (benzene, monosubstituted, disubstituted, trisubstituted), alcohols and phenols (free OH, intramolecular hydrogen bonding, intermolecular hydrogen bonding, Saturated secondary, saturated tertiary, unsaturated secondary, unsaturated tertiary), acetal, ketal, aliphatic ether, aromatic ether, vinyl ether, ethylene oxide cyclic ether, peroxide ether, ketone Type, dialkylcarbonyl, aromatic carbonyl, enol of 1,3-dione, o-hydroxyaryl ketone, dialkylaldehyde, aromatic aldehyde, carbonic acid (dimer, carbonic acid anion), formate , Acetate, conjugated ester, non-conjugated ester, aromatic ester, lactone (β-, γ-, δ-), aliphatic hydrochloride, aromatic hydrochloride, acid anhydride (conjugated, non-conjugated (Yoke, cyclic, acyclic), primary amine, secondary amine, lactam, primary amine (aliphatic, aromatic), secondary amine (aliphatic, aromatic), tertiary (Aliphatic, aromatic), primary amine salt, secondary amine salt, tertiary amine salt, ammonium ion, aliphatic nitrile, aromatic nitrile, carboxyimine, aliphatic isonitrile, aromatic isonitrile, isocyanate, Thiocyanate, aliphatic isothiocyanate, aromatic isothiocyanate, aliphatic nitro compound, aromatic nitro compound, nitroamine, nitrosoamine, nitrate, nitrous acid Esters, nitroso bonds (aliphatic, aromatic, monomers, dimers), thiols and thiophenes, and sulfur compounds such as thioglycolic acid, thiocarbonyl, fluorene, sulfonium, sulfonium chloride, primary sulfonamide , Secondary sulfonamide, sulfate, carbon-halogen bond, Si-A 1 bond (A 1 is H, C, O, or halogen), PA 2 bond (A 2 is H, C, or O), or Ti- O key.

包含上述碳-鹵素鍵之構造列舉為例如-CH2Cl、-CH2Br、-CH2I、-CF2-、-CF3、-CH=CF2、-CF=CF2、氟化芳基、及氯化芳基等。 Examples of the structure including the above carbon-halogen bond include -CH 2 Cl, -CH 2 Br, -CH 2 I, -CF 2- , -CF 3 , -CH = CF 2 , -CF = CF 2 , fluorinated aromatic compound. And chlorinated aryl.

上述含Si-A1鍵之構造列舉為SiH、SiH2、SiH3、Si-CH3、Si-CH2-、Si-C6H5、SiO-脂肪族、Si-OCH3、Si-OCH2CH3、Si-OC6H5、Si-O-Si、Si-OH、SiF、SiF2、及SiF3等。含Si-A1鍵之構造最好為形成矽氧烷骨架及倍半矽氧烷骨架。 The above Si-A 1 bond-containing structures are listed as SiH, SiH 2 , SiH 3 , Si-CH 3 , Si-CH 2- , Si-C 6 H 5 , SiO-aliphatic, Si-OCH 3 , Si-OCH 2 CH 3 , Si-OC 6 H 5 , Si-O-Si, Si-OH, SiF, SiF 2 , and SiF 3 . The structure containing the Si-A 1 bond is preferably a siloxane skeleton and a silsesquioxane skeleton.

含上述P-A2鍵之構造列舉為PH、PH2、P-CH3、P-CH2-、P-C6H5、A3 3-P-O(A3為脂肪族或芳香族)、(A4O)3-P-O(A4為烷基)、P-OCH3、P-OCH2CH3、P-OC6H5、P-O-P、P-OH及O=P-OH等。 The structures containing the PA 2 bond are listed as PH, PH 2 , P-CH 3 , P-CH 2- , PC 6 H 5 , A 3 3 -PO (A 3 is aliphatic or aromatic), (A 4 O ) 3 -PO (A 4 is alkyl), P-OCH 3 , P-OCH 2 CH 3 , P-OC 6 H 5 , POP, P-OH and O = P-OH.

上述構造可依據其種類之選擇而吸收具有期 望範圍之波長之紅外線。具體而言,上述構造可吸收之紅外線之波長為例如1μm以上、20μm以下之範圍內,在2μm以上、15μm以下之範圍內可更好地吸收。另外,上述構造為Si-O鍵、Si-C鍵及Ti-O鍵時,可為9μm以上、11μm以下之範圍內。又,若為本技藝者則可輕易地了解各構造可吸收之紅外線之波長。例如,各構造中之吸收帶可參照非專利文獻:SILVERSTEIN.BASSLER.MORRILL著「利用有機化合物光譜之鑑定法(第5版)-MS、IR、NMR、UV併用-」(1992年發行)第146頁~第151頁之記載。 The above structure can be absorbed according to the choice of its type. Infrared with a desired wavelength. Specifically, the infrared light that can be absorbed by the structure has a wavelength of, for example, 1 μm or more and 20 μm or less, and can be better absorbed in a range of 2 μm or more and 15 μm or less. When the structure is a Si—O bond, a Si—C bond, or a Ti—O bond, the structure may be in a range of 9 μm or more and 11 μm or less. In addition, those skilled in the art can easily understand the wavelength of infrared rays that can be absorbed by each structure. For example, the absorption band in each structure can refer to the non-patent literature: SILVERSTEIN. BASSLER. MORRILL, "The Identification Method by the Spectra of Organic Compounds (Fifth Edition)-MS, IR, NMR, and UV-" (published in 1992) pages 146 to 151.

分離層4之形成所用之具有紅外線吸收性之構造之化合物只要是具有如上述構造之化合物中,可溶解於用以塗佈之溶劑且可固化形成固體層者即無特別限制。然而,就使分離層4中之化合物有效地變質,使支撐板2與基板1之分離容易而言,較好使分離層4中之紅外線之吸收變大,亦即對分離層4照射紅外線時之紅外線透過率低。具體而言,較好分離層4中之紅外線透過率低於90%,更好紅外線透過率低於80%。 The compound having an infrared-absorbing structure for forming the separation layer 4 is not particularly limited as long as it is a compound having the structure as described above, which is soluble in the solvent used for coating and which can be cured to form a solid layer. However, in terms of effectively deteriorating the compounds in the separation layer 4 and making it easy to separate the support plate 2 from the substrate 1, it is preferable to increase the absorption of infrared rays in the separation layer 4, that is, when the separation layer 4 is irradiated with infrared rays The infrared transmittance is low. Specifically, the infrared transmittance in the separation layer 4 is preferably less than 90%, and the infrared transmittance is more preferably less than 80%.

若列舉一例說明,則作為具有矽氧烷骨架之化合物,可使用例如以下述化學式(RL1)表示之重複單位及以下述化學式(RL2)表示之重複單位之共聚物之樹脂,或以下述化學式(1)表示之重複單位及源自丙烯酸系化合物之重複單位之共聚物的樹脂。 If an example is given, as the compound having a siloxane skeleton, for example, a resin of a copolymer represented by a repeating unit represented by the following chemical formula (RL1) and a repeating unit represented by the following chemical formula (RL2), or a resin represented by the following chemical formula (RL1) 1) Resin of a copolymer represented by a repeating unit and a repeating unit derived from an acrylic compound.

Figure TW201801906AD00003
Figure TW201801906AD00003

(化學式(RL2)中,R6為氫、碳數10以下之烷基、或碳數10以下之烷氧基)。 (In the chemical formula (RL2), R 6 is hydrogen, an alkyl group having 10 or less carbon atoms, or an alkoxy group having 10 or less carbon atoms).

其中,具有矽氧烷骨架之化合物更好為以上述化學式(RL1)表示之重複單位及以下述化學式(RL3)表示之重複單位之共聚物之第三丁基苯乙烯(TBST)-二甲基矽氧烷共聚物,又更好為以1:1包含以上述式(RL2)表示之重複單位及以下述化學式(RL3)表示之重複單位之TBST-二甲基矽氧烷共聚物。 Among them, the compound having a siloxane skeleton is more preferably a tertiary butyl styrene (TBST) -dimethyl copolymer of a repeating unit represented by the aforementioned chemical formula (RL1) and a repeating unit represented by the following chemical formula (RL3) The siloxane copolymer is more preferably a TBST-dimethylsiloxane copolymer containing a repeating unit represented by the above formula (RL2) and a repeating unit represented by the following chemical formula (RL3) at 1: 1.

Figure TW201801906AD00004
Figure TW201801906AD00004

又,具有倍半矽氧烷骨架之化合物可使用例如以下述化學式(RL4)表示之重複單位及以下述化學式 (RL5)表示之重複單位之共聚物的樹脂。 In addition, as the compound having a silsesquioxane skeleton, for example, a repeating unit represented by the following chemical formula (RL4) and the following chemical formula can be used. (RL5) Resin of a copolymer of a repeating unit.

Figure TW201801906AD00005
Figure TW201801906AD00005

(化學式(RL4)中,R7為氫或碳數1以上、10以下之烷基,化學式(RL5)中,R8為碳數1以上、10以下之烷基,或苯基)。 (In Chemical Formula (RL4), R 7 is hydrogen or an alkyl group having 1 or more and 10 carbon atoms, and in Chemical Formula (RL5), R 8 is an alkyl group having 1 or more and 10 carbon atoms or phenyl group)).

具有倍半矽氧烷骨架之化合物,除此之外,亦可適當地使用日本特開2007-258663號公報(2007年10月4日公開)、日本特開2010-120901號公報(2010年6月3日公開)、日本特開2009-263316號公報(2009年11月12日公開)及日本特開2009-263596號公報(2009年11月12日公開)中揭示之各種倍半矽氧烷樹脂。 In addition to the compound having a silsesquioxane skeleton, Japanese Patent Application Laid-Open No. 2007-258663 (published on October 4, 2007) and Japanese Patent Application Laid-Open No. 2010-120901 (2010) Published on March 3), Japanese Patent Laid-Open Publication No. 2009-263316 (published on November 12, 2009) and Japanese Patent Laid-Open Publication No. 2009-263596 (published on November 12, 2009) Resin.

其中,具有倍半矽氧烷骨架之化合物更好為以下述化學式(RL6)表示之重複單位及以下述化學式(RL7)表示之重複單位之共聚物,又更好以7:3含有以下述化學式(RL6)表示之重複單位及以下述化學式 (RL7)表示之重複單位之共聚物。 Among them, the compound having a silsesquioxane skeleton is more preferably a copolymer represented by a repeating unit represented by the following chemical formula (RL6) and a repeating unit represented by the following chemical formula (RL7), and more preferably contains the following chemical formula by 7: 3 (RL6) Repeat unit and the following chemical formula Copolymer of repeating units represented by (RL7).

Figure TW201801906AD00006
Figure TW201801906AD00006

具有倍半矽氧烷骨架之聚合物有無規構造、階梯構造及籠型構造,可為任何構造。 The polymer having a silsesquioxane skeleton has a random structure, a step structure, and a cage structure, and can be any structure.

又,含有Ti-O鍵之化合物列舉為例如(i)四-異丙氧化鈦、四-正丁氧化鈦、肆(2-乙基己氧基)鈦、及異丙氧化鈦辛二醇等烷氧基鈦,(ii)二-異丙氧基.雙(乙醯基丙酮基)鈦、及丙烷二氧基鈦雙(乙基乙醯基乙酸酯)等螯合鈦,(iii)i-C3H7O-[-Ti(O-i-C3H7)2-O-]n-i-C3H7、及n-C4H9O-[-Ti(O-n-C4H9)2-O-]n-n-C4H9等之鈦聚合物,(iv)三-正丁氧基鈦單硬脂酸酯、硬脂酸鈦、二異丙氧基鈦二異硬脂酸酯、及(2-正丁氧基羰基苯甲醯氧基)三丁氧化鈦等醯化鈦,(v)二正丁氧基.雙(三乙醇胺 酸)鈦等之水溶性鈦化合物等。 Examples of the compounds containing a Ti-O bond include (i) tetra-isopropyl titanium oxide, tetra-n-butyl titanium oxide, titanium (2-ethylhexyloxy) titanium, and isopropyl titanium oxide octanediol. Titanium alkoxide, (ii) di-isopropoxy. Chelated titanium, such as bis (ethylfluorenylacetone) titanium and propanedioxytitanium bis (ethylethylfluorenyl acetate), (iii) iC 3 H 7 O-[-Ti (OiC 3 H 7 ) 2 -O-] n -iC 3 H 7 and nC 4 H 9 O-[-Ti (OnC 4 H 9 ) 2 -O-] n -nC 4 H 9 and other titanium polymers, (iv) tri- Titanium n-butoxy monostearate, titanium stearate, titanium diisopropoxy diisostearate, and (2-n-butoxycarbonylbenzyloxy) tributoxide, etc. Titanium, (v) di-n-butoxy. Water-soluble titanium compounds such as bis (triethanolamine) titanium.

其中,包含Ti-O鍵之化合物較好為二正丁氧基.雙(三乙醇胺酸)鈦(Ti(OC4H9)2[OC2H4N(C2H4OH)2]2)。 Among them, the compound containing a Ti-O bond is preferably di-n-butoxy. Bis (triethanolamine) titanium (Ti (OC 4 H 9 ) 2 [OC 2 H 4 N (C 2 H 4 OH) 2 ] 2 ).

上述分離層4含有具有紅外線吸收性之構造之化合物,但分離層4可進而含有上述化合物以外之成分。至於該成分列舉為填料、可塑劑、及可提高支撐體之剝離性之成分等。該等成分可自不妨礙由上述構造之紅外線吸收及該化合物之變質、或促進該吸收及變質之過去習知物質或材料適當選擇。 The separation layer 4 contains a compound having a structure having infrared absorption, but the separation layer 4 may further contain components other than the above-mentioned compounds. Examples of the components include fillers, plasticizers, and components capable of improving the peelability of the support. These components may be appropriately selected from conventionally known substances or materials that do not hinder infrared absorption by the above-mentioned structure and deterioration of the compound, or promote the absorption and deterioration.

(紅外線吸收物質) (Infrared absorbing substance)

分離層4亦可含有紅外線吸收物質。分離層4藉由含有紅外線吸收物質而構成,而可藉由吸收光而變質,其結果,喪失接受光照射前之強度或接著性。因此,藉由稍施加外力(例如拉起支撐體等)即可破壞分離層4,可使支撐板2與基板1容易地分離。 The separation layer 4 may contain an infrared absorbing substance. The separation layer 4 is constituted by containing an infrared absorbing substance, and can be deteriorated by absorbing light. As a result, the strength or adhesiveness before receiving light irradiation is lost. Therefore, the separation layer 4 can be broken by applying a slight external force (for example, pulling up the support body), and the support plate 2 and the substrate 1 can be easily separated.

紅外線吸收物質只要為藉由吸收紅外線而變質之構成即可,可較好地使用例如碳黑、鐵粒子或鋁粒子。紅外線吸收物質根據其種類而吸收具有固有範圍之波長之光。藉由對分離層4照射分離層4中使用之紅外線吸收物質所吸收之範圍之波長的光,可使紅外線吸收物質較好地變質。 The infrared absorbing substance may have a structure that deteriorates by absorbing infrared rays, and for example, carbon black, iron particles, or aluminum particles can be preferably used. The infrared absorbing substance absorbs light having an inherent range of wavelengths according to its type. By irradiating the separation layer 4 with light having a wavelength in a range absorbed by the infrared absorbing substance used in the separation layer 4, the infrared absorbing substance can be deteriorated.

(反應性聚倍半矽氧烷) (Reactive polysilsesquioxane)

分離層4可藉由反應性聚倍半矽氧烷聚合而形成。藉此,分離層4具備高的耐藥品性及高的耐熱性。 The separation layer 4 can be formed by polymerizing a reactive polysilsesquioxane. Thereby, the separation layer 4 has high chemical resistance and high heat resistance.

本說明書中,所謂反應性聚倍半矽氧烷係於聚倍半矽氧烷骨架末端具有矽烷醇基或可藉由水解而形成矽烷醇基之官能基之聚倍半矽氧烷,藉由該矽烷醇基或可形成矽烷醇基之官能基縮合,而可相互聚合者。且反應性聚倍半矽氧烷只要具備矽烷醇基或可形成矽烷醇基之官能基,則可採用具備無規構造、籠型構造、階梯構造等之倍半矽氧烷骨架者。 In this specification, the so-called reactive polysilsesquioxane is a polysilsesquioxane having a silanol group at the end of the polysilsesquioxane skeleton or a functional group capable of forming a silanol group by hydrolysis. The silanol group may condense a functional group capable of forming a silanol group and polymerize each other. In addition, as long as the reactive polysilsesquioxane has a silanol group or a functional group capable of forming a silanol group, a silsesquioxane skeleton having a random structure, a cage structure, a step structure, or the like can be used.

又,反應性聚倍半矽氧烷更好為具有下述式(RL8)所示之構造。 The reactive polysilsesquioxane preferably has a structure represented by the following formula (RL8).

Figure TW201801906AD00007
Figure TW201801906AD00007

式(RL8)中,R”分別獨立選自由氫及碳數1以上、10以下之烷基所成之群,更好選自由氫及碳數1以上、5以下之烷基所成之群。R”若為氫或碳數1以上、10以下之烷基,則藉由分離層形成步驟中加熱,可使式(RL8)表示之反應性聚倍半矽氧烷較好地縮合。 In the formula (RL8), R "is independently selected from the group consisting of hydrogen and alkyl groups having 1 to 10 carbon atoms, and more preferably selected from the group consisting of hydrogen and alkyl groups having 1 to 5 carbon atoms. If R "is hydrogen or an alkyl group having 1 to 10 carbon atoms, the reactive polysilsesquioxane represented by formula (RL8) can be condensed well by heating in the separation layer forming step.

式(RL8)中,p較好為1以上、100以下之整數,更好為1以上、50以下之整數。反應性聚倍半矽氧烷藉由具備式(RL8)表示之重複單位,而可形成比使用其他材料形成者之Si-O鍵含量更高、紅外線(0.78μm以上、1000μm以下),更好遠紅外線(3μm以上、1000μm以下),進而更好波長9μm以上、11μm以下之吸光度高的分離層4。 In formula (RL8), p is preferably an integer of 1 or more and 100 or less, more preferably an integer of 1 or more and 50 or less. The reactive polysilsesquioxane has a repeating unit represented by the formula (RL8), and can form a higher Si-O bond content and infrared rays (0.78 μm or more and 1000 μm or less), which are better than those formed using other materials. Far-infrared rays (3 μm or more and 1000 μm or less), and further preferably a separation layer 4 having a high absorbance at a wavelength of 9 μm or more and 11 μm or less.

又,式(RL8)中,R”分別獨立為相互相同或不同之有機基。此處,R為例如芳基、烷基及烯基等,該等有機亦可具有取代基。 In the formula (RL8), R "is independently an organic group that is the same or different from each other. Here, R is, for example, an aryl group, an alkyl group, and an alkenyl group, and these organic groups may have a substituent.

R’為芳基時,可舉例為苯基、萘基、蒽基、菲基等,更好為苯基。且芳基亦可透過碳數1~5之伸烷基鍵結於聚倍半矽氧烷骨架。 When R 'is an aryl group, a phenyl group, a naphthyl group, an anthryl group, a phenanthryl group and the like can be exemplified, and a phenyl group is more preferable. The aryl group can also be bonded to the polysilsesquioxane skeleton through an alkylene group having 1 to 5 carbon atoms.

R’為烷基時,作為烷基可舉例為直鏈狀、分支鏈狀或環狀烷基。且R為烷基時,較好碳數為1~15,更好為1~6。且R為環狀烷基時,亦可為具有單環狀或二~四環狀之構造之烷基。 When R 'is an alkyl group, examples of the alkyl group include a linear, branched or cyclic alkyl group. When R is an alkyl group, the number of carbon atoms is preferably 1 to 15, more preferably 1 to 6. When R is a cyclic alkyl group, it may be an alkyl group having a monocyclic or bicyclic structure.

R’為烯基時,與烷基之情況同樣,可舉例為直鏈狀、分支鏈狀或環狀烯基,烯基較好碳數為2~15,更好為2~6。且,R為環狀烯基時,亦可為具有單環狀或二~四環狀之構造之烯基。作為烯基可舉例為例如乙烯基及烯丙基等。 When R 'is an alkenyl group, as in the case of an alkyl group, linear, branched or cyclic alkenyl groups can be exemplified. The alkenyl group preferably has 2 to 15 carbon atoms, more preferably 2 to 6. When R is a cyclic alkenyl group, the alkenyl group may have a monocyclic or bicyclic structure. Examples of the alkenyl group include a vinyl group and an allyl group.

又,作為R’可具有之取代基,可舉例羥基及烷氧基等。取代基為烷氧基時,可舉例為直鏈狀、分支鏈 狀或環狀烷氧基,烷氧基中之碳數較好為1~15,更好為1~10。 Examples of the substituent which R 'may have include a hydroxyl group and an alkoxy group. When the substituent is an alkoxy group, a linear or branched chain may be exemplified. The number of carbon atoms in the cyclic or cyclic alkoxy group is preferably 1 to 15, more preferably 1 to 10.

又,於一觀點中,反應性聚倍半矽氧烷中之矽氧烷含量較好為70莫耳%以上、99莫耳%以下,更好為80莫耳%以上、99莫耳%以下。反應性聚倍半矽氧烷骨架中之矽氧烷含量若為70莫耳%以上、99莫耳%以下,則可形成可藉由照射紅外線(較佳為遠紅外線,進而更佳為波長9μm以上、11μm以下之光)而較好地變質之分離層4。 Further, in one aspect, the content of the siloxanes in the reactive polysilsesquioxane is preferably 70 mol% or more and 99 mol% or less, more preferably 80 mol% or more and 99 mol% or less. . If the content of the siloxane in the reactive polysilsesquioxane skeleton is 70 mol% or more and 99 mol% or less, it can be formed by irradiating infrared rays (preferably far infrared rays, and more preferably a wavelength of 9 μm). Above, 11 μm or less), and the separation layer 4 is better deteriorated.

又,於一觀點中,反應性聚倍半矽氧烷之重量平均分子量(Mw)較好為500以上、50000以下,更好為1000以上、10000以下。反應性聚倍半矽氧烷之重量平均分子量(Mw)若為500以上、50000以下,則可較好地溶解於溶劑中,可較好地塗佈於支撐板上。 Moreover, in one viewpoint, the weight average molecular weight (Mw) of the reactive polysilsesquioxane is preferably 500 or more and 50,000 or less, more preferably 1,000 or more and 10,000 or less. If the weight-average molecular weight (Mw) of the reactive polysilsesquioxane is 500 or more and 50,000 or less, it can be well dissolved in a solvent and can be applied to a support plate.

可作為反應性聚倍半矽氧烷使用之市售品可舉例為例如小西化學工業股份有限公司製之SR-13、SR-21、SR-23及SR-33等。 Examples of commercially available products that can be used as the reactive polysilsesquioxane include, for example, SR-13, SR-21, SR-23, and SR-33 manufactured by Konishi Chemical Industry Co., Ltd.

[接著層形成步驟] [Next layer forming step]

如圖1之(b)所示,接著層形成步驟中,藉由塗佈接著劑組成物而於基板1之一平面部上形成接著層3。 As shown in FIG. 1 (b), in the step of forming an adhesive layer, an adhesive layer 3 is formed on a flat portion of the substrate 1 by applying an adhesive composition.

[基板1] [Substrate 1]

基板1係以支持於支撐板2之狀態,可供於薄化、安裝等之製程。且基板1可供例如積體電路等之元件(裸晶) 及金屬凸塊等之構造物安裝,並藉由密封材密封。亦即,本實施形態之層合體之製造方法中,基板1典型上可為Si中介板(矽晶圓)。且,作為基板1,亦可舉例為用以形成裸晶所用之矽晶圓、陶瓷基板、薄的薄膜基板及可撓性基板等之由任意材質所成之基板。 The substrate 1 is supported by the supporting plate 2 and can be used for processes such as thinning and mounting. And the substrate 1 can be used for components such as integrated circuits (bare die) And metal bumps and other structures are installed and sealed with a sealing material. That is, in the manufacturing method of the laminated body of this embodiment, the substrate 1 can typically be a Si interposer (silicon wafer). In addition, as the substrate 1, a substrate made of any material such as a silicon wafer, a ceramic substrate, a thin film substrate, and a flexible substrate used to form a bare crystal can also be exemplified.

[接著層3] [Next to layer 3]

接著層3係用以貼附基板1與支撐板2之層,係藉由於基板1之一平面部上塗佈含有聚合性樹脂成分、聚合起始劑及溶劑之接著劑組成物而形成。又,接著劑組成物所含之聚合起始劑可為熱聚合起始劑,亦可為光聚合起始劑,但更好為熱聚合起始劑。 The adhesive layer 3 is a layer for attaching the substrate 1 and the support plate 2, and is formed by coating an adhesive composition containing a polymerizable resin component, a polymerization initiator, and a solvent on a flat surface of the substrate 1. The polymerization initiator contained in the adhesive composition may be a thermal polymerization initiator or a photopolymerization initiator, but is more preferably a thermal polymerization initiator.

用以塗佈接著劑組成物之方法可採用例如旋轉塗佈、浸漬、輥刀、噴霧塗佈、狹縫塗佈等習知之塗佈方法。 As a method for coating the adhesive composition, conventional coating methods such as spin coating, dipping, roll knife, spray coating, and slit coating can be used.

接著層3之厚度,只要根據基板1及支撐板2之種類及對基板1實施之處理等適當設定即可,但較好為10~150μm之範圍內,更好為15~100μm之範圍內。 The thickness of the next layer 3 may be appropriately set according to the types of the substrate 1 and the support plate 2 and the processing performed on the substrate 1, but it is preferably within a range of 10 to 150 μm, more preferably within a range of 15 to 100 μm.

又,接著層形成步驟係於基板1塗佈接著劑組成物後,較好預先自接著劑組成物去除稀釋溶劑。藉此,於之後之硬化步驟中,加熱層合體時,可防止起因於接著層中所含之稀釋溶劑揮發所致之接著層3與基板1之密著性降低。作為自接著劑組成物去除稀釋溶劑之方法,可舉例為使溫度階梯地上升而加熱接著層3,而去除稀釋溶劑之 方法。 In addition, the adhesion layer forming step is performed after the substrate 1 is coated with the adhesive composition, and then the diluent solvent is preferably removed from the adhesive composition in advance. Thereby, in the subsequent hardening step, when the laminate is heated, it is possible to prevent the adhesion between the adhesive layer 3 and the substrate 1 from being lowered due to volatilization of the diluent solvent contained in the adhesive layer. As a method for removing the diluent solvent from the adhesive composition, for example, the temperature can be raised in steps to heat the adhesive layer 3 to remove the diluent solvent. method.

為了去除稀釋溶劑而加熱基板1時之溫度條件,係在可經由接著層3貼附基板1與支撐板2之可貼附區域內進行。此處,所謂可貼附區域意指可獲得接著層可將基板與支撐體貼附之動態黏度之溫度區域。例如,本實施形態之層合體之製造方法中,係將可使接著層含有之聚合性樹脂成分聚合而增黏,並且該接著層之動態黏度顯示1Pa.s以下之值之溫度區域設定為可貼附區域。 The temperature conditions when the substrate 1 is heated in order to remove the diluent solvent are performed in an attachable area where the substrate 1 and the support plate 2 can be attached via the adhesive layer 3. Here, the term “attachable region” means a temperature region in which a dynamic viscosity is obtained at which an adhesive layer can attach a substrate to a support. For example, in the manufacturing method of the laminated body of this embodiment, the polymerizable resin component contained in the adhesive layer can be polymerized and thickened, and the dynamic viscosity of the adhesive layer shows 1 Pa. A temperature region having a value of s or less is set as an attachable region.

又,作為自接著層3去除稀釋溶劑之方法,亦可舉例將基板1放置於減壓環境下而去除稀釋溶劑之方法。藉此,可與聚合起始劑種類無關地,自接著層3較好地去除稀釋溶劑。且,藉由在減壓環境下加熱接著層3,亦可自接著層3去除稀釋溶劑。 In addition, as a method of removing the diluting solvent from the adhesive layer 3, a method of removing the diluting solvent by placing the substrate 1 in a reduced pressure environment may be exemplified. This makes it possible to remove the diluting solvent from the adhesive layer 3 irrespective of the type of the polymerization initiator. Moreover, by diluting the solvent from the adhesive layer 3 by heating the adhesive layer 3 under a reduced pressure environment.

[層合步驟] [Lamination step]

如圖1之(c)所示,本實施形態之層合體之製造方法所包含之層合步驟係依序層合基板1、接著層3、分離層4及支撐板2。層合步驟係於可貼附區域內,將形成於基板1上之接著層3貼附於支撐板2。本實施形態之層合體之製造方法所用之接著劑組成物係藉由聚合起始劑使聚合性樹脂成分聚合而硬化。因此,於可貼附區域中,接著層3之動態黏度可為1Pa.s以下,就形成於基板1上之接著層3可以對支撐板2濡濕性良好地貼附之方面,亦為本發明之層合體之製造方法的優點之一。 As shown in FIG. 1 (c), the lamination step included in the method for manufacturing the laminated body of this embodiment is to sequentially laminate the substrate 1, the adhesive layer 3, the separation layer 4, and the support plate 2. The laminating step is to attach the adhesive layer 3 formed on the substrate 1 to the support plate 2 in the attachable area. The adhesive composition used in the method for producing a laminated body according to this embodiment is a polymerizable resin component that is polymerized and cured by a polymerization initiator. Therefore, in the attachable area, the dynamic viscosity of the adhesive layer 3 can be 1 Pa. Below s, the adhesive layer 3 formed on the substrate 1 can adhere to the support plate 2 with good wettability, and is also one of the advantages of the method for manufacturing the laminated body of the present invention.

層合步驟中,於減壓環境下,將基板1上之形成接著層3之面與支撐板2上之形成分離層4之面貼合並壓著而層合。層合步驟中,將基板1與支撐板2貼合時施加之壓力只要對應於基板1及支撐板2之大小適當設定即可。又,藉由熱聚合起始劑形成硬化之接著層3時,例如藉由具備加熱器等之加熱手段之一對板構件一面加熱,一面壓著基板1與支撐板2,可於層合步驟後,快速進行藉由加熱之硬化步驟。 In the laminating step, under a reduced pressure environment, the surface on the substrate 1 where the adhesion layer 3 is formed and the surface on which the separation layer 4 is formed on the support plate 2 are adhered and laminated to be laminated. In the laminating step, the pressure applied when the substrate 1 and the support plate 2 are bonded together may be set appropriately according to the sizes of the substrate 1 and the support plate 2. In addition, when the hardened adhesive layer 3 is formed by a thermal polymerization initiator, for example, the plate member is heated by one of the heating means including a heater and the substrate 1 and the support plate 2 are pressed while the plate member is laminated. After that, a hardening step by heating is quickly performed.

[硬化步驟] [Hardening step]

硬化步驟係藉由使層合步驟後所得之層合體30之接著層3加熱或曝光而使接著層3中所含之聚合性樹脂成分聚合而硬化之步驟(圖1之(c))。 The hardening step is a step of polymerizing and curing the polymerizable resin component contained in the adhesive layer 3 by heating or exposing the adhesive layer 3 of the laminate 30 obtained after the laminating step (FIG. 1 (c)).

硬化步驟中藉由加熱使聚合性樹脂成分硬化時,作為硬化條件之溫度及時間只要基於可貼附區域予以特定即可。亦即,於可貼附區域以上之溫度區域,較好加熱5~120分鐘,更好加熱10~60分鐘。藉此,含有聚合性樹脂成分與熱聚合起始劑之接著層3之250℃以上之動態黏度可較好地提高至1000Pa.s以上。 When the polymerizable resin component is hardened by heating in the hardening step, the temperature and time as hardening conditions may be specified based on the attachable area. That is, in the temperature range above the attachable area, it is preferably heated for 5 to 120 minutes, and more preferably for 10 to 60 minutes. With this, the dynamic viscosity of the adhesive layer 3 containing the polymerizable resin component and the thermal polymerization initiator at 250 ° C or higher can be improved to 1000 Pa. s or more.

又,硬化步驟中藉由曝光使聚合性樹脂成分硬化時,與溫度條件無關,而是例如經由光可透過之支撐板2藉由LED燈或水銀燈等使接著層3曝光,而將250℃以上之接著層3之動態黏度提高至1000Pa.s以上即可。 In addition, when the polymerizable resin component is hardened by exposure in the hardening step, regardless of temperature conditions, for example, the adhesive layer 3 is exposed through a light-transmissive support plate 2 by an LED lamp or a mercury lamp, and the temperature is 250 ° C or higher. Then the dynamic viscosity of layer 3 was increased to 1000Pa. s or more is sufficient.

<層合體30> <Laminated body 30>

如圖1之(c)所示,層合體30係將基板1與支撐板2經由接著層3及分離層4層合而成。層合體30之接著層3具有250℃以上之動態黏度為1000Pa.s以上之高的耐熱性。因此,層合體30藉由進行例如使基板1薄化之薄化步驟,而可於例如露出於基板1之平面部之貫通電極等上安裝元件(安裝步驟),並使用環氧系之樹脂或聚矽氧系之樹脂等之密封材密封該元件(密封步驟)。藉此,可自基板1較好地形成密封基板。亦即,依據本實施形態之層合體之製造方法,可基於扇入型WLP(Fan-in Wafer Level Package)技術,較好地進行半導體裝置(電子零件)之製造。因此,藉由本發明之層合體之製造方法製造之層合體亦為本發明之範圍。 As shown in FIG. 1 (c), the laminated body 30 is formed by laminating the substrate 1 and the support plate 2 via the adhesive layer 3 and the separation layer 4. Adhesive layer 3 of laminate 30 has a dynamic viscosity of 1000 Pa above 250 ° C. High heat resistance above s. Therefore, by performing a thinning step such as thinning the substrate 1, the laminated body 30 can mount components on, for example, a through electrode exposed on a flat portion of the substrate 1 (mounting step), and use an epoxy-based resin or A sealing material such as a silicone resin seals the element (sealing step). Thereby, a sealing substrate can be formed from the substrate 1 well. That is, the method for manufacturing a laminated body according to this embodiment can better manufacture a semiconductor device (electronic part) based on a fan-in WLP (Fan-in Wafer Level Package) technology. Therefore, the laminated body manufactured by the manufacturing method of the laminated body of this invention is also the scope of the present invention.

<基板處理方法(第一實施形態)> <Substrate Processing Method (First Embodiment)>

其次,針對一實施形態(第一實施形態)之基板處理方法加以說明。本實施形態之基板處理方法包含藉由本發明一實施形態之層合體之製造方法製造層合體30之層合體製造步驟(圖1之(a)~(c)),及於層合體製造步驟後,經由支撐板2對分離層4照射光而使分離層4變質,並自基板1分離支撐板2之分離步驟(圖1之(d)及(e)),及於分離步驟後,藉由研削去除基板1側之接著層3之殘渣之接著層去除步驟(圖1之(f)及(g))。又,圖1之(a)~(c)所示之層合體製造步驟由於與第一 實施形態之層合體30之製造方法相同,故其說明省略。 Next, a substrate processing method according to an embodiment (first embodiment) will be described. The substrate processing method of this embodiment includes the steps of manufacturing a laminated body (see (a) to (c) in FIG. 1) of manufacturing the laminated body 30 by the method of manufacturing a laminated body according to an embodiment of the present invention, and after the manufacturing step of the laminated body, The separation layer 4 is deteriorated by irradiating the separation layer 4 with light through the support plate 2, and a separation step of separating the support plate 2 from the substrate 1 ((d) and (e) in FIG. 1). An adhesive layer removing step of removing the residue of the adhesive layer 3 on the substrate 1 side ((f) and (g) in FIG. 1). In addition, the manufacturing steps of the laminate shown in (a) to (c) of FIG. Since the manufacturing method of the laminated body 30 of embodiment is the same, description is abbreviate | omitted.

[分離步驟] [Separation step]

如圖1之(d)所示,於分離步驟,層合體製造步驟後,經由支撐板2對分離層4照射光L。藉此,使層合體30之分離層4變質,可自層合體30徹底良好地分離支撐板2。 As shown in FIG. 1 (d), after the separation step and the laminated body manufacturing step, the separation layer 4 is irradiated with light L through the support plate 2. Thereby, the separation layer 4 of the laminated body 30 is deteriorated, and the support plate 2 can be completely and well separated from the laminated body 30.

分離步驟中,照射至分離層4之光L的種類及波長係根據支撐板2之透過性及分離層4之材質適當選擇即可,例如可使用YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射、色素雷射等之液體雷射,CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光,或非雷射光。藉此,使分離層4變質,可使支撐板2與基板1成為容易分離之狀態。 In the separation step, the type and wavelength of the light L irradiated to the separation layer 4 may be appropriately selected according to the permeability of the support plate 2 and the material of the separation layer 4. For example, YAG laser, ruby laser, glass laser, YVO 4 laser, LD laser, fiber laser, solid laser, pigment laser, liquid laser, CO 2 laser, excimer laser, Ar laser, He-Ne laser, etc. Laser, semiconductor laser, free electron laser, etc., or non-laser light. Thereby, the separation layer 4 is modified, and the support plate 2 and the substrate 1 can be easily separated.

又,作為照射雷射光時之雷射光照射條件之一例可舉例以下條件,但未限定於此:雷射光之平均輸出值較好為1.0W以上5.0W以下,更好為3.0W以上4.0W以下;雷射光重複頻率較好為20kHz以上60kHz以下,更好為30kHz以上50kHz以下;雷射光之掃描速度較好為100mm/s以上10000mm/s以下。 In addition, as an example of laser light irradiation conditions when laser light is irradiated, the following conditions can be exemplified, but are not limited thereto: The average output value of the laser light is preferably 1.0 W or more and 5.0 W or less, and more preferably 3.0 W or more and 4.0 W or less. ; The laser light repetition frequency is preferably from 20 kHz to 60 kHz, more preferably from 30 kHz to 50 kHz; The scanning speed of laser light is preferably from 100 mm / s to 10000 mm / s.

隨後,如圖1之(e)所示,於分離步驟,藉由施加使支撐板2與基板1相互遠離之方向之力而分離。例如於將層合體30之支撐板2及基板1之一者固定於台上之狀態,藉由具備蛇腹墊等之吸附墊之分離板吸附保持另一者 並拉起,或藉由具備夾具(把持構件)之分離板(未圖示)把持支撐板2之周緣部分端面之倒角部位並拉起,可使基板1與支撐板2分離。 Subsequently, as shown in FIG. 1 (e), in the separation step, separation is performed by applying a force in a direction to move the support plate 2 and the substrate 1 away from each other. For example, in a state where one of the support plate 2 and the substrate 1 of the laminate 30 is fixed on a table, the other is adsorbed and held by a separation plate provided with an adsorption pad such as a belly pad. The substrate 1 and the support plate 2 can be separated by pulling up, or by holding a chamfered portion of the end surface of the peripheral portion of the support plate 2 with a separating plate (not shown) provided with a jig (holding member) and pulling up.

[接著層去除步驟] [Next layer removal step]

如圖1之(f)所示,於接著層去除步驟,藉由研削去除於經分離支撐板2後之基板1側之接著層3之殘渣。此處,殘留於基板1側之接著層3於25℃下之楊氏模數為2.0GPa以上。因此,可防止接著層3之研削粕阻塞研削裝置之孔。因此,藉由製造半導體裝置之領域中用以使矽晶圓薄化(背面研磨)所用之習知研削裝置,可較好地研削去除接著層3之殘渣。 As shown in FIG. 1 (f), in the subsequent layer removing step, the residue of the adhesive layer 3 on the substrate 1 side after the separated support plate 2 is removed by grinding. Here, the Young's modulus at 25 ° C. of the adhesive layer 3 remaining on the substrate 1 side is 2.0 GPa or more. Therefore, it is possible to prevent the grinding meal adhering to the layer 3 from blocking the holes of the grinding device. Therefore, a conventional grinding device used for thinning a silicon wafer (rear-side polishing) in the field of manufacturing a semiconductor device can better grind and remove the residue of the subsequent layer 3.

更具體而言,於接著層去除步驟,以具備BG(背面研磨)用輪等之研磨機20研削而去除基板1側之接著層3之殘渣。例如邊將基板1以旋轉夾具固定並旋轉,邊將研磨機20抵接於接著層3之殘渣並旋轉,亦可研削接著層3之殘渣。此處,研磨機20中之轉軸旋轉數等之條件,可依據研削矽晶圓之研磨裝置中一般採用之條件而設定,作為一例可參考本說明書之實施例。且,研磨機20宜自轉軸部(未圖示)或外部噴嘴(未圖示)以2~4L/分鐘之量邊供給研削水而研削接著層3。藉由此等條件,依據研削接著層3,研磨機20之最大電流值可設於5~20A之範圍內。因此,可以與研削半導體晶圓基板之條件同樣之條件研削接著層3之殘渣。 More specifically, in the adhesive layer removing step, the residue on the adhesive layer 3 on the substrate 1 side is removed by grinding with a grinder 20 including a BG (back surface polishing) wheel or the like. For example, while the substrate 1 is fixed and rotated by a rotating jig, the grinder 20 is brought into contact with the residue of the adhesive layer 3 and rotated, and the residue of the adhesive layer 3 may be ground. Here, the conditions such as the number of rotations of the rotating shaft in the polishing machine 20 can be set according to the conditions generally used in a polishing device for grinding silicon wafers, and as an example, reference can be made to the embodiment of this specification. In addition, the grinder 20 is preferably supplied with grinding water from a rotating shaft portion (not shown) or an external nozzle (not shown) in an amount of 2 to 4 L / min to grind the adhesive layer 3. With these conditions, the maximum current value of the grinder 20 can be set within the range of 5 to 20A according to the grinding and bonding layer 3. Therefore, the residue of the bonding layer 3 can be ground under the same conditions as those for grinding a semiconductor wafer substrate.

<接著劑組成物> <Adhesive composition>

如以上,本發明一實施形態之層合體之製造方法,藉由使用可形成於250℃以上之動態黏度為1000Pa.s以上,且硬化後之於25℃下之楊氏模數為2GPa以上之接著層3的接著劑組成物,可較好地自層合步驟實施至接著層去除步驟。又,藉由一實施形態之接著劑組成物形成之接著層可將顯示1Pa.s以下之動態黏度之溫度區域設定為可貼附區域。 As described above, the method for manufacturing a laminated body according to an embodiment of the present invention can use a dynamic viscosity of 1000 Pa which can be formed above 250 ° C. The adhesive composition of the adhesive layer 3 with a Young's modulus at 25 ° C. of more than s and a curing temperature of 2 GPa or more at 25 ° C. can be preferably implemented from the laminating step to the adhesive layer removing step. In addition, the adhesive layer formed by the adhesive composition of an embodiment can display 1 Pa. The temperature range of the dynamic viscosity below s is set as the attachable area.

由接著劑組成物形成之接著層3之貼附溫度區域與於250℃下之動態黏度可使用習知動態黏度測定裝置,以頻率1Hz之條件,邊以速度5℃/分鐘於40℃~300℃之溫度範圍升溫,邊測定動態黏度(η*)而特定。 The temperature range of the adhesive layer 3 formed by the adhesive composition and the dynamic viscosity at 250 ° C can be measured using a conventional dynamic viscosity measurement device at a frequency of 1Hz and a speed of 5 ° C / min at 40 ° C ~ 300. The temperature was raised in a temperature range of ℃, and the dynamic viscosity (η *) was measured and specified.

一實施形態之接著劑組成物由於藉由使聚合性樹脂成分聚合而生成硬化物,故動態黏度測定之初期低溫區域下之該接著層之動態黏度顯示較低之傾向,於及至高溫區域之期間急遽增黏,而顯示動態黏度變高之傾向。因此,可將顯示1Pa.s以下之動態黏度之低溫區域設定為接著層3之可貼附區域。又,動態黏度測定中,隨著進一步升溫,接著層3硬化,於250℃下顯示1000Pa.s以上之動態黏度。相對於此,使用熱塑性樹脂之接著層,有於動態黏度測定之初期之低溫區域中,顯示1000Pa.s以上之高的動態黏度,隨著進一步升溫,顯示1000Pa.s以下之動態黏度之傾向。因此,使用熱塑性樹脂之接著層,有必 要將可獲得1000Pa.s以下之動態黏度之高溫區域設定為可貼附區域。亦即,一實施形態之接著劑組成物可在比使用熱塑性樹脂形成之接著層更低溫條件濡濕性良好地使基板1與支撐板2貼附,藉由進一步加熱,可在高溫條件下形成耐熱性高的接著層。 Since the adhesive composition of one embodiment forms a cured product by polymerizing a polymerizable resin component, the dynamic viscosity of the adhesive layer in the low-temperature region at the initial stage of dynamic viscosity measurement tends to be low, and during the period up to the high-temperature region It suddenly increases viscosity and shows a tendency of dynamic viscosity to become higher. Therefore, 1Pa can be displayed. The low-temperature region of dynamic viscosity below s is set as the attachable region of layer 3. In addition, in the dynamic viscosity measurement, as the temperature was further increased, the layer 3 hardened and showed 1000 Pa at 250 ° C. Dynamic viscosity above s. In contrast, the use of an adhesive layer of a thermoplastic resin shows 1000 Pa in a low-temperature region at the initial stage of dynamic viscosity measurement. The dynamic viscosity above s shows 1000Pa as the temperature rises further. Trend of dynamic viscosity below s. Therefore, it is necessary to use a thermoplastic resin adhesive layer. To get 1000Pa. The high-temperature region with dynamic viscosity below s is set as the attachable region. That is, the adhesive composition according to one embodiment can adhere the substrate 1 and the support plate 2 at a lower temperature than the adhesive layer formed using a thermoplastic resin, and has good wettability, and further heat can form heat resistance under high temperature conditions. Adhesive layer with high sex.

由接著劑組成物形成之接著層之楊氏模數只要使用習知之彈性率測定裝置(例如FISCHERSCOPE Hm2000測定裝置(FISCHER INSTRUMENTS公司製)),以最大試驗荷重:5mN,荷重施加期間:20秒,潛變時間:5秒、25℃之條件測定即可。 The Young's modulus of the adhesive layer formed from the adhesive composition can be measured using a conventional elastic modulus measuring device (such as a FISCHERSCOPE Hm2000 measuring device (manufactured by FISCHER INSTRUMENTS)) with a maximum test load: 5 mN, and a load application period: 20 seconds Latent time: 5 seconds at 25 ° C.

接著劑組成物,基於上述之動態黏度測定方法及楊氏模數之評價方法,調製以下詳細說明之各聚合性樹脂成分之組成,可將於250℃下之接著層3之動態黏度設為1000Pa.s以上且將25℃下之接著層3之楊氏模數設為2GPa以上。接著層中,為了使250℃下之動態黏度及25℃下之楊氏模數為特定值以上,而參考例如各聚合性樹脂成分之官能基當量、每單分子之官能基數調製各樹脂之調配即可。例如使用官能基當量較高的聚合性樹脂成分時,接著層顯示於250℃下之接著層之動態黏度變高之傾向,顯示25℃下之楊氏模數亦變高之傾向。更具體而言,例如使用環氧樹脂作為聚合性樹脂成分時,若調製環氧當量成為100g/eq以上之樹脂成分組成,則可形成於250℃下之動態黏度為1000Pa.s以上且於25℃下之楊氏模數為2GPa以上之接著層。使用環氧樹脂時,更好使用每單分子之官能基 數為1以上者。又,例如使用丙烯酸系聚合性樹脂成分時,較好調製乙烯性不飽和鍵基之當量成為100g/eq以上之樹脂成分組成。又,使用丙烯酸系聚合性樹脂成分時,更好使用每單分子之官能基數為1以上者。 The adhesive composition is based on the above-mentioned dynamic viscosity measurement method and Young's modulus evaluation method, and the composition of each polymerizable resin component described in detail below is prepared. The dynamic viscosity of the adhesive layer 3 at 250 ° C. can be set to 1000 Pa. . s or more and the Young's modulus of the adhesive layer 3 at 25 ° C. is set to 2 GPa or more. In the next layer, in order to make the dynamic viscosity at 250 ° C and the Young's modulus at 25 ° C equal to or more than a specific value, reference is made to, for example, the functional group equivalent of each polymerizable resin component and the number of functional groups per single molecule to adjust the formulation of each resin. Just fine. For example, when a polymerizable resin component having a higher functional group equivalent is used, the adhesive layer tends to have a higher dynamic viscosity at 250 ° C, and a Young's modulus also tends to become higher at 25 ° C. More specifically, for example, when an epoxy resin is used as the polymerizable resin component, if a resin component composition having an epoxy equivalent of 100 g / eq or more is prepared, the dynamic viscosity at 250 ° C. can be 1000 Pa. Adhesive layer having a Young's modulus of 2 GPa or more at s or higher at 25 ° C. When using epoxy, it is better to use functional groups per molecule The number is one or more. Further, for example, when an acrylic polymerizable resin component is used, it is preferable to prepare a resin component composition in which the equivalent of the ethylenically unsaturated bond group is 100 g / eq or more. When an acrylic polymerizable resin component is used, it is more preferable to use one having a functional group number of 1 or more per single molecule.

且亦可併用聚合性樹脂成分不同種類之聚合性樹脂成分,只要硬化前接著層3之動態黏度為1000Pa.s以下即可,但更好以成為1.0Pa.s以下之方式調製聚合性樹脂成分。 And different types of polymerizable resin components of polymerizable resin components can also be used together, as long as the dynamic viscosity of layer 3 before curing is 1000Pa. s is sufficient, but it is better to be 1.0Pa. The polymerizable resin component is prepared in the following manner.

以下針對一實施形態之接著劑組成物可使用之聚合性樹脂成分、聚合起始劑、及其他成分更詳細說明。 Hereinafter, the polymerizable resin component, the polymerization initiator, and other components that can be used in the adhesive composition of one embodiment will be described in more detail.

(聚合性樹脂成分) (Polymerizable resin component)

作為聚合性樹脂成分,可選擇具有至少1個選自由乙烯性不飽和鍵及環氧基所成之群中之至少1種官能基之加成聚合性樹脂成分。此種化合物群為本產業領域中廣為周知者,於一實施形態之接著劑組成物中,若可形成於250℃下之動態黏度為1000Pa.s以上且於25℃下之楊氏模數為2GPa以上之接著層,則可無特別限定地使用該等。 As the polymerizable resin component, an addition polymerizable resin component having at least one functional group selected from the group consisting of an ethylenically unsaturated bond and an epoxy group can be selected. This compound group is widely known in the industrial field. In an adhesive composition of one embodiment, if it can be formed at 250 ° C, the dynamic viscosity is 1000 Pa. Adhesive layers having a Young's modulus of 2 GPa or more at 25 ° C or higher can be used without particular limitation.

作為聚合性樹脂成分並未特別限定,較好為含有選自具有環氧基之聚合性樹脂成分、具有乙烯性不飽和雙鍵之聚合性樹脂成分及含有交聯性基之矽氧烷所成之群中之至少1種之聚合性樹脂成分,更好含有具有環氧基之聚合性樹脂成分。 Although it does not specifically limit as a polymerizable resin component, It is preferable that it is formed by containing the polymerizable resin component which has an epoxy group, the polymerizable resin component which has an ethylenically unsaturated double bond, and the crosslinkable group containing siloxane. The polymerizable resin component of at least one of the groups preferably contains a polymerizable resin component having an epoxy group.

具有環氧基之聚合性樹脂成分若為可藉由使用聚合起始劑而使環氧基開裂並相互聚合之化合物則未特別限定。又,具有環氧基之聚合性樹脂成分無關於其分子量,只要側鏈或末端之至少任一者中導入環氧基即可。因此,具有環氧基之聚合性樹脂成分亦可為例如具有環氧基與乙烯性不飽和雙鍵之化合物與不具有環氧基而具有乙烯性不飽和雙鍵之化合物共聚合,而於側鏈導入環氧基之樹脂。 The polymerizable resin component having an epoxy group is not particularly limited as long as it is a compound capable of cleaving an epoxy group and polymerizing each other by using a polymerization initiator. In addition, the polymerizable resin component having an epoxy group is irrespective of its molecular weight, as long as an epoxy group is introduced into at least one of a side chain or a terminal. Therefore, the polymerizable resin component having an epoxy group may be, for example, a compound having an epoxy group and an ethylenically unsaturated double bond and a compound having an epoxy group and an ethylenically unsaturated double bond, which are copolymerized with each other. Epoxy-based resin.

又,具有乙烯性不飽和雙鍵之聚合性樹脂成分只要具有乙烯性不飽和雙鍵,則可為低分子化合物,亦可為均聚物、共聚合樹脂等之聚合物。 The polymerizable resin component having an ethylenically unsaturated double bond may be a low-molecular compound or a polymer such as a homopolymer or a copolymer resin, as long as it has an ethylenically unsaturated double bond.

具有乙烯性不飽和雙鍵之低分子化合物較好分子量為2000以下,更好為1500以下,最好為分子量900以下。本發明中所謂低分子化合物係藉由使用聚合起始劑使其不飽和鍵開裂而連鎖鍵結成長而得之並非所謂聚合物或寡聚物,而是具有分子量2000以下(更好1500以下,又更好900以下)之一定分子量之化合物(實質上不具有分子量分佈之化合物)。又,低分子化合物之分子量通常為100以上。 The low molecular compound having an ethylenically unsaturated double bond preferably has a molecular weight of 2,000 or less, more preferably 1500 or less, and most preferably a molecular weight of 900 or less. The so-called low-molecular compound in the present invention is obtained by using a polymerization initiator to break the unsaturated bond and grow the chain bond. It is not a so-called polymer or oligomer, but has a molecular weight of 2000 or less (more preferably 1500 or less, Even more preferably 900 or less) compounds of a certain molecular weight (compounds having substantially no molecular weight distribution). The molecular weight of the low-molecular compound is usually 100 or more.

又,作為具有乙烯性不飽和雙鍵之低分子化合物之例,舉例為不飽和羧酸(例如丙烯酸、甲基丙烯酸、依康酸、巴豆酸、異巴豆酸、馬來酸等)或其酯類、醯胺類等,較好為不飽和羧酸與脂肪族多元醇化合物之酯、及不飽和羧酸與脂肪族多元胺化合物之醯胺類。 Examples of low-molecular compounds having ethylenically unsaturated double bonds include unsaturated carboxylic acids (such as acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, and maleic acid) or esters thereof. And amines are preferably esters of unsaturated carboxylic acids and aliphatic polyhydric alcohol compounds, and amines of unsaturated carboxylic acids and aliphatic polyamine compounds.

又,具有乙烯性不飽和雙鍵之低分子化合物亦可為對單官能或多官能異氰酸酯類或環氧類加成例如具有羥基或胺基、巰基等之親核性取代基之不飽和羧酸酯或醯胺類而得之加成反應物。且,具有乙烯性不飽和雙鍵之低分子化合物亦可較好地使用具有鹵基或甲苯磺醯基等之脫離性取代基之不飽和羧酸酯或醯胺類與單官能或多官能之醇類、胺類、硫醇類之取代反應物。 In addition, the low-molecular compound having an ethylenically unsaturated double bond may be an unsaturated carboxylic acid having a nucleophilic substituent such as a hydroxyl group, an amino group, or a mercapto group added to a monofunctional or polyfunctional isocyanate or epoxy. Addition reactants derived from esters or amidines. In addition, as the low-molecular compound having an ethylenically unsaturated double bond, an unsaturated carboxylic acid ester or amidoamine having a detachable substituent such as a halogen group or tosylsulfonyl group, and a monofunctional or polyfunctional Substitute reactants for alcohols, amines, and thiols.

又,具有乙烯性不飽和雙鍵之共聚合樹脂可藉由使例如具有羥基或胺基、巰基等之官能基之不飽和羧酸酯或醯胺類之共聚物中之該官能基與具有含有異氰酸酯基或環氧基之乙烯性不飽和雙鍵之化合物反應,而導入乙烯性不飽和雙鍵之樹脂。又,具有乙烯性不飽和雙鍵之共聚合樹脂亦可為使例如具有羥基或胺基、巰基等之官能基之不飽和羧酸酯或醯胺類之共聚物與具有羧酸及乙烯性不飽和雙鍵之化合物縮合而成之樹脂。 In addition, for a copolymer resin having an ethylenically unsaturated double bond, for example, an unsaturated carboxylic acid ester having a functional group such as a hydroxyl group, an amino group, or a mercapto group, or a copolymer of amidines, and the functional group having Isocyanate-based or epoxy-based ethylenically unsaturated double-bond compounds react to introduce ethylenically unsaturated double-bond resins. The copolymer resin having an ethylenically unsaturated double bond may be, for example, a copolymer of an unsaturated carboxylic acid ester or amidine having a functional group such as a hydroxyl group, an amine group, or a mercapto group with a carboxylic acid and an ethylenic compound. A resin obtained by condensing a compound with a saturated double bond.

此外,聚合性樹脂成分亦可為例如具備矽氧烷骨架,且於該矽氧烷骨架之末端及側鏈之至少任一者中具備環氧基及乙烯性不飽和雙鍵之至少任一者之含交聯性基之矽氧烷。 In addition, the polymerizable resin component may have, for example, a siloxane skeleton and at least one of an epoxy group and an ethylenically unsaturated double bond in at least one of a terminal and a side chain of the siloxane skeleton. Siloxane containing a crosslinkable group.

此種聚合性樹脂成分亦可併用2種以上。 Such polymerizable resin components may be used in combination of two or more.

(1.具有環氧基之聚合性樹脂成分) (1. Polymerizable resin component having epoxy group)

具有環氧基之聚合性樹脂成分只要於1分子中具有用以藉由加熱或曝光而硬化之充分環氧基之樹脂成分即可。 其中,較好含有選自由酚醛清漆型環氧樹脂(Anv)、雙酚型環氧樹脂(Abp)、脂環式環氧樹脂、具有環氧基之丙烯酸樹脂(Aac)所成之群中之至少1種樹脂。該等環氧樹脂中,基於可較好地獲得硬化後之接著層3之於250℃以上之高動態黏度及25℃下之高楊氏模數之觀點,更好使用酚醛清漆型環氧樹脂。又,該等具有環氧基之聚合性樹脂成分可單獨使用1種或組合2種以上使用。該等中更佳之環氧樹脂之具體例顯示如下。 The polymerizable resin component having an epoxy group may have a resin component having a sufficient epoxy group in one molecule for curing by heating or exposure. Among them, it is preferably selected from the group consisting of a novolac epoxy resin (Anv), a bisphenol epoxy resin (Abp), an alicyclic epoxy resin, and an acrylic resin (Aac) having an epoxy group. At least one resin. Among these epoxy resins, novolac-type epoxy resins are more preferably used from the viewpoint that a high dynamic viscosity at 250 ° C or higher and a high Young's modulus at 25 ° C of the adhesive layer 3 after hardening can be better obtained. . Moreover, these polymerizable resin components which have an epoxy group can be used individually by 1 type or in combination of 2 or more types. Specific examples of these better epoxy resins are shown below.

(1)酚醛清漆型環氧樹脂(Anv) (1) Novolac epoxy resin (Anv)

作為酚醛清漆型環氧樹脂(Anv)可使用下述通式(anv0)表示之樹脂。 As the novolak-type epoxy resin (Anv), a resin represented by the following general formula (anv0) can be used.

Figure TW201801906AD00008
Figure TW201801906AD00008

(式中,Ra11、Ra12分別獨立為氫原子或碳數1~5之烷基,na11為1~5之整數,REP為含環氧基之基)。 (In the formula, R a11 and R a12 are each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, na 11 is an integer of 1 to 5 and R EP is an epoxy group-containing group).

式(anv0)中,Ra11、Ra12之碳數1~5之烷基為例如碳 數1~5之直鏈狀、分支狀或環狀之烷基。作為直鏈狀或分支狀之烷基舉例為甲基、乙基、丙基、異丙基、正丁基、異丁基、第三丁基、戊基、異戊基、新戊基等,作為環狀之烷基舉例為環丁基、環戊基等。其中,作為Ra11、Ra12較好為氫原子或甲基。 In the formula (anv0), the alkyl group having 1 to 5 carbon atoms of R a11 and R a12 is , for example, a linear, branched, or cyclic alkyl group having 1 to 5 carbon atoms. Examples of linear or branched alkyl groups include methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, third butyl, pentyl, isopentyl, neopentyl, etc. Examples of the cyclic alkyl group include a cyclobutyl group and a cyclopentyl group. Among them, R a11 and R a12 are preferably a hydrogen atom or a methyl group.

式(anv0)中,REP為含環氧基之基。作為REP之含環氧基之基並未特別限定,舉例為僅由環氧基所成之基;僅由脂環式環氧基所成之基;具有環氧基或脂環式環氧基與2價連結基之基。所謂脂環式環氧基係具有3員環醚的氧雜環丙烷構造之脂環式基,具體而言為具有脂環式基與氧雜環丙烷構造之基。作為成為脂環式環氧基之基本骨架之脂環式基,可為單環亦可為多環。作為單環之脂環式基,舉例為環丙基、環丁基、環戊基、環己基、環庚基、環辛基等。且,作為多環脂環式基舉例為降冰片基、異冰片基、三環壬基、三環癸基、四環十二烷基等。又,該等脂環式基之氫原子亦可經烷基、烷氧基、羥基等取代。具有環氧基或脂環式環氧基及2價連結基之基時,較好經由鍵結於式中之氧原子(-O-)之2價連結基鍵結環氧基或脂環式環氧基。此處,作為2價連結基並未特別限定,作為較佳者舉例為可具有取代基之2價烴基、含雜原子之2價連結基等。 In the formula (anv0), R EP is an epoxy-containing group. The epoxy-containing group as the R EP is not particularly limited, and examples include a group formed only from an epoxy group; a group formed only from an alicyclic epoxy group; an epoxy group or an alicyclic epoxy Base and base of divalent linking base. The alicyclic epoxy group is an alicyclic group having an oxeane structure having a 3-membered cyclic ether, and specifically is a group having an alicyclic group and an oxeane structure. The alicyclic group as a basic skeleton of the alicyclic epoxy group may be monocyclic or polycyclic. Examples of the monocyclic alicyclic group include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and cyclooctyl. Examples of the polycyclic alicyclic group include norbornyl, isobornyl, tricyclononyl, tricyclodecyl, and tetracyclododecyl. The hydrogen atom of these alicyclic groups may be substituted with an alkyl group, an alkoxy group, a hydroxyl group, or the like. When a group having an epoxy group or an alicyclic epoxy group and a divalent linking group, the epoxy group or the alicyclic group is preferably bonded via a divalent linking group bonded to an oxygen atom (-O-) in the formula. Epoxy. Here, the divalent linking group is not particularly limited, and preferred examples include a divalent hydrocarbon group which may have a substituent, a divalent linking group containing a hetero atom, and the like.

針對可具有取代基之2價烴基: For divalent hydrocarbon groups which may have a substituent:

該2價烴基可為脂肪族烴基,亦可為芳香族烴基。作 為2價烴基之脂肪族烴基可為飽和,亦可為不飽和,通常較好為飽和。作為該脂肪族烴基,更具體而言,舉例為直鏈狀或分支鏈狀之脂肪族烴基,或構造中含環之脂肪族烴基等。 The divalent hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. Make The aliphatic hydrocarbon group which is a divalent hydrocarbon group may be saturated or unsaturated, and is usually preferably saturated. Specific examples of the aliphatic hydrocarbon group include a linear or branched aliphatic hydrocarbon group, a ring-containing aliphatic hydrocarbon group in the structure, and the like.

上述直鏈狀之脂肪族烴基之碳數較好為1~10,更好為1~6,又更好為1~4,最好為1~3。作為直鏈狀脂肪族烴基較好為直鏈狀伸烷基,具體而言舉例為亞甲基[-CH2-]、伸乙基[-(CH2)2-]、三亞甲基[-(CH2)3-]、四亞甲基[-(CH2)4-]、五亞甲基[-(CH2)5-]等。 The carbon number of the linear aliphatic hydrocarbon group is preferably 1 to 10, more preferably 1 to 6, still more preferably 1 to 4, and most preferably 1 to 3. The linear aliphatic hydrocarbon group is preferably a linear alkylene group, and specific examples thereof include methylene [-CH 2- ], ethylene [-(CH 2 ) 2- ], and trimethylene [- (CH 2 ) 3- ], tetramethylene [-(CH 2 ) 4- ], pentamethylene [-(CH 2 ) 5- ], and the like.

上述分支鏈狀之脂肪族烴基之碳數較好為2~10,更好為2~6,又更好為2~4,最好為2或3。作為分支鏈狀之脂肪族烴基較好為分支鏈狀之伸烷基,具體而言舉例為-CH(CH3)-、-CH(CH2CH3)-、-C(CH3)2-、-C(CH3)(CH2CH3)-、-C(CH3)(CH2CH2CH3)-、-C(CH2CH3)2-等之烷基亞甲基;-CH(CH3)CH2-、-CH(CH3)CH(CH3)-、-C(CH3)2CH2-、-CH(CH2CH3)CH2-、-C(CH2CH3)2CH2-等之烷基伸乙基;-CH(CH3)CH2CH2-、-CH2CH(CH3)CH2-等之烷基三亞甲基;-CH(CH3)CH2CH2CH2-、-CH2CH(CH3)CH2CH2-等之烷基四亞甲基等之烷基伸烷基等。烷基伸烷基中之烷基較好為碳數1~5之直鏈狀烷基。 The carbon number of the branched chain aliphatic hydrocarbon group is preferably 2 to 10, more preferably 2 to 6, still more preferably 2 to 4, and most preferably 2 or 3. The branched chain aliphatic hydrocarbon group is preferably a branched chain alkylene group, and specific examples are -CH (CH 3 )-, -CH (CH 2 CH 3 )-, -C (CH 3 ) 2- , -C (CH 3 ) (CH 2 CH 3 )-, -C (CH 3 ) (CH 2 CH 2 CH 3 )-, -C (CH 2 CH 3 ) 2- , etc. alkyl methylene groups;- CH (CH 3 ) CH 2- , -CH (CH 3 ) CH (CH 3 )-, -C (CH 3 ) 2 CH 2- , -CH (CH 2 CH 3 ) CH 2- , -C (CH 2 CH 3 ) 2 CH 2 -and other alkylene groups; -CH (CH 3 ) CH 2 CH 2 -and -CH 2 CH (CH 3 ) CH 2 -and other alkyltrimethylene groups; -CH (CH 3 ) Alkyl alkylene and the like of CH 2 CH 2 CH 2- , -CH 2 CH (CH 3 ) CH 2 CH 2 -and the like. The alkyl group in the alkylene alkyl group is preferably a linear alkyl group having 1 to 5 carbon atoms.

作為上述構造中之含環之脂肪族烴基舉例為脂環式烴基(自脂肪族烴基去除2個氫原子之基)、脂環式烴基鍵結於直鏈狀或分支鏈狀之脂肪族烴基末端之基、脂環式烴基介隔於直鏈狀或分支鏈狀脂肪族烴基之中間之 基等。作為上述直鏈狀或分支鏈狀之脂肪族烴基舉例為與上述相同者。上述脂環式烴基之碳數較好為3~20,更好為3~12。上述脂環式烴基可為多環式基,亦可為單環式基。作為單環式之脂環式烴基較好為自單環烷去除2個氫原子之基。該單環烷較好為碳數3~6者,具體而言舉例為環戊烷、環己烷等。 Examples of the ring-containing aliphatic hydrocarbon group in the above structure include an alicyclic hydrocarbon group (a group in which two hydrogen atoms are removed from the aliphatic hydrocarbon group), and the alicyclic hydrocarbon group is bonded to the end of the linear or branched aliphatic hydrocarbon group. Base, alicyclic hydrocarbon group is interposed between the linear or branched aliphatic hydrocarbon group Base etc. Examples of the linear or branched aliphatic hydrocarbon group are the same as those described above. The carbon number of the alicyclic hydrocarbon group is preferably from 3 to 20, more preferably from 3 to 12. The alicyclic hydrocarbon group may be a polycyclic group or a monocyclic group. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a monocycloalkane. The monocycloalkane is preferably one having 3 to 6 carbon atoms, and specific examples thereof include cyclopentane and cyclohexane.

作為多環式之脂環式烴基較好為自多環烷去除2個氫原子者,作為該多環烷較好為碳數7~12者,具體而言舉例為金剛烷、降冰片烷、異冰片烷、三環癸烷、四環十二烷等。 The polycyclic alicyclic hydrocarbon group is preferably one in which two hydrogen atoms are removed from the polycycloalkane. The polycycloalkane is preferably one having 7 to 12 carbon atoms, and specific examples include adamantane, norbornane, Isobornane, tricyclodecane, tetracyclododecane, etc.

2價烴基中之芳香族烴基為具有至少1個芳香環之烴基。該芳香環若為具有(4n+2)個π電子之環狀共軛系則未特別限定,可為單環式亦可為多環式。芳香環之碳數較好為5~30,更好為5~20,又更好為6~15,特佳為6~12。作為芳香環具體舉例為苯、萘、蒽、菲等之芳香族烴環;構成上述芳香族烴環之碳原子之一部分經雜原子取代之芳香族雜環等。芳香族雜環中之雜原子舉例為氧原子、硫原子、氮原子等。作為芳香族雜環具體而言舉例為吡啶環、噻吩環等。 The aromatic hydrocarbon group in the divalent hydrocarbon group is a hydrocarbon group having at least one aromatic ring. The aromatic ring is not particularly limited as long as it is a cyclic conjugated system having (4n + 2) π electrons, and may be monocyclic or polycyclic. The carbon number of the aromatic ring is preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and particularly preferably 6 to 12. Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; and aromatic heterocyclic rings in which a part of the carbon atoms constituting the aromatic hydrocarbon ring is substituted with a hetero atom. Examples of the hetero atom in the aromatic heterocyclic ring include an oxygen atom, a sulfur atom, a nitrogen atom, and the like. Specific examples of the aromatic heterocyclic ring include a pyridine ring and a thiophene ring.

作為芳香族烴基,具體而言舉例為自上述芳香族烴環或芳香族雜環去除2個氫原子之基(伸芳基或伸雜芳基);自包含2個以上芳香環之芳香族化合物(例如聯苯基、茀基等)去除2個氫原子之基;自上述芳香族烴環或芳香族雜環去除1個氫原子之基(芳基或雜芳基)中 之氫原子之1個經伸烷基取代之基(例如自苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳基烷基中之芳基進一步去除1個氫原子之基)等。鍵結於上述芳基或雜芳基之伸烷基之碳數較好為1~4,更好為1~2,特佳為1。 Specific examples of the aromatic hydrocarbon group include a group in which two hydrogen atoms are removed from the above-mentioned aromatic hydrocarbon ring or aromatic heterocyclic ring (arylene or heteroaryl); and an aromatic compound containing two or more aromatic rings. (Such as biphenyl, fluorenyl, etc.) to remove two hydrogen atoms; remove one hydrogen atom (aryl or heteroaryl) from the aromatic hydrocarbon ring or aromatic heterocyclic ring 1 alkylene substituted group of hydrogen atom (e.g. from benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl The aryl group in the arylalkyl group and the like further removes a hydrogen atom) and the like. The number of carbon atoms of the alkylene group bonded to the aryl or heteroaryl group is preferably 1 to 4, more preferably 1 to 2, and particularly preferably 1.

2價烴基亦可具有取代基。作為2價之烴基之直鏈狀或分支鏈狀之脂肪族烴基可具有取代基,亦可不具有取代基。作為該取代基舉例為氟原子、經氟原子取代之碳數1~5之氟化烷基、羰基等。 The divalent hydrocarbon group may have a substituent. The linear or branched aliphatic hydrocarbon group as the divalent hydrocarbon group may or may not have a substituent. Examples of the substituent include a fluorine atom, a fluorinated alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom, a carbonyl group, and the like.

作為2價烴基中之於構造中含環之脂肪族烴基中之脂環式烴基可具有取代基,亦可不具有取代基。作為該取代基舉例為烷基、烷氧基、鹵原子、鹵化烷基、羥基、羰基等。作為上述取代基之烷基,較好為碳數1~5之烷基,最好為甲基、乙基、丙基、正丁基、第三丁基。作為上述取代基之烷氧基,較好為碳數1~5之烷氧基,較好為甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第三丁氧基,最好為甲氧基、乙氧基。作為上述取代基之鹵原子,舉例為氟原子、氯原子、溴原子、碘原子等,更好為氟原子。作為上述取代基之鹵化烷基,舉例為上述烷基之氫原子之一部分或全部經上述鹵原子取代之基。脂環式烴基其構成環構造之碳原子之一部分亦可經含雜原子之取代基取代。作為該含雜原子之取代基,較好為-O-、-C(=O)-O-、-S-、-S(=O)2-、-S(=O)2-O-。 The alicyclic hydrocarbon group in the ring-containing aliphatic hydrocarbon group in the structure as the divalent hydrocarbon group may or may not have a substituent. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, and a carbonyl group. The alkyl group as the substituent is preferably an alkyl group having 1 to 5 carbon atoms, and more preferably methyl, ethyl, propyl, n-butyl, and third butyl. The alkoxy group as the substituent is preferably an alkoxy group having 1 to 5 carbon atoms, and is preferably a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, or a third group. Butoxy is preferably methoxy or ethoxy. Examples of the halogen atom of the substituent include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and more preferably a fluorine atom. Examples of the halogenated alkyl group as the substituent include a group in which part or all of the hydrogen atoms of the alkyl group are substituted with the halogen atom. An alicyclic hydrocarbon group may be substituted with a part of carbon atoms constituting a ring structure by a hetero atom-containing substituent. As the hetero atom-containing substituent, -O-, -C (= O) -O-, -S-, -S (= O) 2- , -S (= O) 2 -O- are preferred.

作為2價烴基之芳香環烴基係該芳香族烴基具 有之氫原子可經取代基取代。例如該芳香族烴基中之鍵結於芳香環之氫原子可經取代基取代。作為該取代基舉例為例如烷基、烷氧基、鹵原子、鹵化烷基、羥基等。作為上述取代基之烷基較好為碳數1~5之烷基,最好為甲基、乙基、丙基、正丁基、第三丁基。作為上述取代基之烷氧基、鹵原子及鹵化烷基,舉例為取代上述脂環式烴基具有之氫原子之取代基所例示者。 The aromatic cyclic hydrocarbon group as a divalent hydrocarbon group is an aromatic hydrocarbon group having Some hydrogen atoms may be substituted by a substituent. For example, a hydrogen atom bonded to an aromatic ring in the aromatic hydrocarbon group may be substituted with a substituent. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, and a hydroxyl group. The alkyl group as the substituent is preferably an alkyl group having 1 to 5 carbon atoms, and more preferably methyl, ethyl, propyl, n-butyl, and third butyl. Examples of the alkoxy group, a halogen atom, and a halogenated alkyl group as the substituent include substituents that substitute a hydrogen atom that the alicyclic hydrocarbon group has.

針對含雜原子之2價連結基: For heterovalent divalent linking groups:

含雜原子之2價連結基中之雜原子係除了碳原子及氫原子以外之原子,例如氧原子、氮原子、硫原子、鹵原子等。含雜原子之2價連結基中,作為該連結基較好者舉例為-O-、-C(=O)-O-、-C(=O)-、-OC(=O)-O-;-C(=O)-NH-、-NH-、-NH-C(=O)-O-、-NH-C(=NH)-(H亦可經烷基、醯基等之取代基取代);-S-、-S(=O)2-、-S(=O)2-O-、以通式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-C(=O)-O-Y21-、-[Y21-C(=O)-O]m”-Y22-或-Y21-O-C(=O)-Y22-表示之基[式中,Y21及Y22分別獨立為可具有取代基之2價烴基,O為氧原子,m”為0~3之整數]等。上述含雜原子之2價連結基為-C(=O)-NH-、-NH-、-NH-C(=O)-O-、-NH-C(=NH)-時,其H亦可經烷基、醯基等之取代基取代。該取代基(烷基、醯基)較好碳數為1~10,更好為1~8,特佳為1~5。式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-C(=O)-O-Y21-、-[Y21-C(=O)-O]m”-Y22- 或-Y21-O-C(=O)-Y22-中之Y21及Y22分別獨立為可具有取代基之2價烴基。作為該2價烴基舉例為與作為上述2價連結基之說明中舉例之「可具有取代基之2價烴基」同樣者。作為Y21,較好為直鏈狀脂肪族烴基,更好為直鏈狀伸烷基,又更好為碳數1~5之直鏈狀伸烷基,特佳為亞甲基或伸乙基。作為Y22,較好為直鏈狀或分支鏈狀之脂肪族烴基,更好為亞甲基、伸乙基或烷基亞甲基。該烷基亞甲基中之烷基較好為碳數1~5之直鏈狀烷基,更好為碳數1~3之直鏈狀烷基,最好為甲基。以式-[Y21-C(=O)-O]m”-Y22-表示之基中,m”為0~3之整數,較好為0~2之整數,更好為0或1,特佳為1。亦即,作為以式-[Y21-C(=O)-O]m”-Y22-表示之基特佳為以式-Y21-C(=O)-O-Y22-表示之基。其中,較好為以式-(CH2)a’-C(=O)-O-(CH2)b’-表示之基。該式中,a’為1~10之整數,較好1~8之整數,更好1~5之整數,又更好為1或2,最好為1。b’為1~10之整數,較好1~8之整數,更好1~5之整數,又更好為1或2,最好為1。其中,作為REP中之含環氧基之基較好為縮水甘油基。 The heteroatom in the heterovalent divalent linking group is an atom other than a carbon atom and a hydrogen atom, and examples thereof include an oxygen atom, a nitrogen atom, a sulfur atom, and a halogen atom. Among the divalent linking groups containing hetero atoms, preferred examples of the linking group are -O-, -C (= O) -O-, -C (= O)-, -OC (= O) -O- ; -C (= O) -NH-, -NH-, -NH-C (= O) -O-, -NH-C (= NH)-(H can also be substituted by alkyl, fluorenyl, etc. substituted); - S -, - S (= O) 2 -, - S (= O) 2 -O-, the formula -Y 21 -OY 22 -, - Y 21 -O -, - Y 21 -C (= O) -O-, -C (= O) -OY 21 -,-[Y 21 -C (= O) -O] m ”-Y 22 -or -Y 21 -OC (= O) -Y 22 -a group represented by [wherein Y 21 and Y 22 are each independently a divalent hydrocarbon group which may have a substituent, O is an oxygen atom, and m 'is an integer of 0 to 3] and the like. When the heterovalent divalent linking group is -C (= O) -NH-, -NH-, -NH-C (= O) -O-, -NH-C (= NH)-, its H is also It may be substituted by a substituent such as an alkyl group, a fluorenyl group, and the like. The carbon number of the substituent (alkyl, fluorenyl) is preferably 1 to 10, more preferably 1 to 8, and particularly preferably 1 to 5. -Y 21 -OY 22- , -Y 21 -O-, -Y 21 -C (= O) -O-, -C (= O) -OY 21 -,-(Y 21 -C (= O) Y 21 and Y 22 in -O] m "-Y 22 -or -Y 21 -OC (= O) -Y 22 -are each independently a divalent hydrocarbon group which may have a substituent. Examples of the divalent hydrocarbon group are The "divalent hydrocarbon group which may have a substituent" which is exemplified in the description of the divalent linking group is the same. As Y 21 , a linear aliphatic hydrocarbon group is preferred, a linear alkylene group is more preferred, and a linear alkylene group having 1 to 5 carbon atoms is more preferred. Methylene or ethylene is particularly preferred. base. Y 22 is preferably a linear or branched aliphatic hydrocarbon group, and more preferably a methylene group, an ethylidene group, or an alkylmethylene group. The alkyl group in the alkylmethylene group is preferably a linear alkyl group having 1 to 5 carbon atoms, more preferably a linear alkyl group having 1 to 3 carbon atoms, and most preferably a methyl group. In the base represented by the formula-[Y 21 -C (= O) -O] m "-Y 22- , m" is an integer of 0 to 3, preferably an integer of 0 to 2, more preferably 0 or 1 , Especially good for 1. That is, the base represented by the formula-[Y 21 -C (= O) -O] m "-Y 22 -is particularly preferably the base represented by the formula -Y 21 -C (= O) -OY 22- . Among them, a base represented by the formula-(CH 2 ) a'-C (= O) -O- (CH 2 ) b'- is preferred. In the formula, a 'is an integer from 1 to 10, preferably 1 An integer of ~ 8, more preferably an integer of 1 to 5, and more preferably 1 or 2, b is preferably 1. b 'is an integer of 1 to 10, preferably an integer of 1 to 8, more preferably an integer of 1 to 5. , More preferably 1 or 2, and most preferably 1. Among them, the epoxy-containing group in R EP is preferably a glycidyl group.

又,作為酚醛清漆型環氧樹脂(Anv)可較好地使用含有以下述通式(anv1)表示之構成單位之樹脂。 As the novolac-type epoxy resin (Anv), a resin containing a constituent unit represented by the following general formula (anv1) can be preferably used.

Figure TW201801906AD00009
Figure TW201801906AD00009

(式中,REP為含環氧基之基,Ra22、Ra23分別獨立為氫原子、碳數1~5之烷基或鹵原子) (In the formula, R EP is an epoxy-containing group, and R a22 and R a23 are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogen atom.)

式(anv1)中,Ra22、Ra23之碳數1~5之烷基與上述式(anv0)中之Ra11、Ra12之碳數1~5之烷基相同。Ra22、Ra23之鹵原子較好為氯原子或溴原子。式(anv1)中,REP與式(anv0)中之REP相同,且較好為縮水甘油基。 In the formula (anv1), the alkyl groups having 1 to 5 carbons in R a22 and R a23 are the same as the alkyl groups having 1 to 5 carbons in R a11 and R a12 in the above formula (anv0). The halogen atom of R a22 and R a23 is preferably a chlorine atom or a bromine atom. In the formula (anv1), same as in the formula R EP (anv0) R EP, and preferably a glycidyl group.

以下顯示上述式(anv1)表示之構成單位之具體例。 Specific examples of the constituent units represented by the above formula (anv1) are shown below.

Figure TW201801906AD00010
Figure TW201801906AD00010

酚醛清漆型環氧樹脂(Anv)可僅由上述構成單位(anv1)構成之樹脂,亦較好為具有構成單位(anv1)與其他構成單位之樹脂。作為其他構成單位舉例為例如以下述通式(anv2)~(anv3)分別表示之構成單位。 The novolak epoxy resin (Anv) may be a resin composed of only the above-mentioned constituent unit (anv1), and a resin having the constituent unit (anv1) and other constituent units is also preferred. Examples of other constituent units include constituent units represented by the following general formulae (anv2) to (anv3), for example.

Figure TW201801906AD00011
Figure TW201801906AD00011

(式中,Ra24為可具有取代基之烴基,Ra25~Ra26、Ra28~Ra30分別獨立為氫原子、碳數1~5之烷基或鹵原子,Ra27為含環氧基之基或可具有取代基之烴基)。 (In the formula, R a24 is a hydrocarbon group which may have a substituent, R a25 to R a26 and R a28 to R a30 are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogen atom, and R a27 is an epoxy group-containing group. Or a hydrocarbon group which may have a substituent).

式(anv2)中,Ra24為可具有取代基之烴基。作為可具有取代基之烴基,舉例為直鏈狀或分支鏈狀之烷基、環狀之烴基。該直鏈狀之烷基較好碳數為1~5,更好為1~4,又更好為1或2。具體而言,舉例為甲基、乙基、正丙基、正丁基、正戊基等。該等中,較好為甲基、乙基或正丁基,更好為甲基或乙基。 In the formula (anv2), R a24 is a hydrocarbon group which may have a substituent. Examples of the hydrocarbon group which may have a substituent include a linear or branched alkyl group and a cyclic hydrocarbon group. The carbon number of the linear alkyl group is preferably 1 to 5, more preferably 1 to 4, and even more preferably 1 or 2. Specific examples are methyl, ethyl, n-propyl, n-butyl, n-pentyl, and the like. Among these, methyl, ethyl or n-butyl is preferred, and methyl or ethyl is more preferred.

該分支鏈狀之烷基較好碳數為3~10,更好為3~5。具體而言舉例為異丙基、異丁基、第三丁基、異戊基、新戊基、1,1-二乙基丙基、2,2-二甲基丁基等,較好為異丙基。 The branched alkyl group preferably has a carbon number of 3 to 10, more preferably 3 to 5. Specific examples are isopropyl, isobutyl, third butyl, isopentyl, neopentyl, 1,1-diethylpropyl, 2,2-dimethylbutyl, and the like, and more preferably Isopropyl.

Ra24為環狀烴基時,該烴基可為脂肪族烴基亦可為芳香族烴基,且可為多環式亦可為單環式。作為單環式之脂肪族烴基較好為自單環烷去除1個氫原子之基。作為該單環烷較好為碳數3~6個者,具體而言舉例為環戊 烷、環己烷等。作為多環式之脂肪族烴基較好為自多環烷去除1個氫原子之基,作為該多環烷較好為碳數7~12者,具體而言舉例為金剛烷、降冰片烷、異冰片烷、三環癸烷、四環十二烷等。 When R a24 is a cyclic hydrocarbon group, the hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group, and may be polycyclic or monocyclic. The monocyclic aliphatic hydrocarbon group is preferably a group obtained by removing one hydrogen atom from a monocycloalkane. The monocycloalkane is preferably one having 3 to 6 carbon atoms, and specific examples thereof include cyclopentane and cyclohexane. The polycyclic aliphatic hydrocarbon group is preferably a group that removes one hydrogen atom from the polycycloalkane. The polycycloalkane is preferably one having 7 to 12 carbon atoms. Specific examples include adamantane, norbornane, Isobornane, tricyclodecane, tetracyclododecane, etc.

Ra24之環狀烴基為芳香族烴基時,該芳香族烴基為具有至少1個芳香環之烴基。該芳香環若為具有(4n+2)個π電子之環狀共軛系則未特別限定,可為單環式亦可為多環式。芳香環之碳數較好為5~30,更好為5~20,又更好為6~15,特佳為6~12。作為芳香環具體舉例為苯、萘、蒽、菲等之芳香族烴環;構成上述芳香族烴環之碳原子之一部分經雜原子取代之芳香族雜環等。芳香族雜環中之雜原子舉例為氧原子、硫原子、氮原子等。作為芳香族雜環具體而言舉例為吡啶環、噻吩環等。作為Ra24之芳香族烴基,具體而言舉例為自上述芳香族烴環或芳香族雜環去除1個氫原子之基(芳基或雜芳基);自包含2個以上芳香環之芳香族化合物(例如聯苯、茀等)去除1個氫原子之基;自上述芳香族烴環或芳香族雜環中之氫原子之1個經伸烷基取代之基(例如苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳基烷基)等。鍵結於上述芳香族烴環或芳香族雜環之伸烷基之碳數較好為1~4,更好為1~2,特佳為1。 When the cyclic hydrocarbon group of R a24 is an aromatic hydrocarbon group, the aromatic hydrocarbon group is a hydrocarbon group having at least one aromatic ring. The aromatic ring is not particularly limited as long as it is a cyclic conjugated system having (4n + 2) π electrons, and may be monocyclic or polycyclic. The carbon number of the aromatic ring is preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and particularly preferably 6 to 12. Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; and aromatic heterocyclic rings in which a part of the carbon atoms constituting the aromatic hydrocarbon ring is substituted with a hetero atom. Examples of the hetero atom in the aromatic heterocyclic ring include an oxygen atom, a sulfur atom, a nitrogen atom, and the like. Specific examples of the aromatic heterocyclic ring include a pyridine ring and a thiophene ring. Specific examples of the aromatic hydrocarbon group of R a24 include a group (aryl group or heteroaryl group) having one hydrogen atom removed from the aromatic hydrocarbon ring or aromatic heterocyclic ring; and an aromatic group containing two or more aromatic rings. Compounds (e.g. biphenyl, fluorene, etc.) remove one hydrogen atom; one alkylene substituted group (e.g. benzyl, phenethyl) from a hydrogen atom in the above aromatic hydrocarbon ring or aromatic heterocyclic ring , Arylalkyl such as 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl) and the like. The number of carbons of the alkylene group bonded to the aromatic hydrocarbon ring or the aromatic heterocyclic ring is preferably 1 to 4, more preferably 1 to 2, and particularly preferably 1.

式(anv2)、(anv3)中,Ra25~Ra26、Ra28~Ra30分別獨立為氫原子、碳數1~5之烷基或鹵原子,碳數1~5之烷基、鹵原子分別與上述Ra22、Ra23相同。 In the formulas (anv2) and (anv3), R a25 to R a26 and R a28 to R a30 are each independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogen atom, and an alkyl group having 1 to 5 carbon atoms or a halogen atom. They are the same as the above-mentioned R a22 and R a23 , respectively.

式(anv3)中,Ra27為含環氧基之基或可具有取代基之烴基,Ra27之含環氧基之基與上述式(anv0)中之REP相同,Ra27之可具有取代基之烴基與Ra24相同。 In the formula (anv3), R a27 is a group containing epoxy groups or substituted hydrocarbon group, the same as the group R containing epoxy groups a27 of the above formula (anv0) R EP, R a27 may have a substituent of The hydrocarbyl group is the same as for R a24 .

以下顯示上述式(anv2)~(anv3)表示之構成單位之具體例。 Specific examples of the constituent units represented by the formulae (anv2) to (anv3) are shown below.

Figure TW201801906AD00012
Figure TW201801906AD00012

又,作為可取代上述通式(anv1)表示之構成單位之其他構成單位,除上述(anv2)~(anv3)表示之構成單位以外,可舉例為多環烷構成單位。如此,作為多環烷構成單位,較好為碳數7~12者,具體而言可舉例為金剛烷構成單位、降冰片烷構成單位、異冰片烷構成單位、三環癸烷構成單位、四環十二烷構成單位等。 In addition, as another constituent unit that can replace the constituent unit represented by the general formula (anv1), in addition to the constituent units represented by the above (anv2) to (anv3), polycycloalkane constituent units can be exemplified. In this way, as the constituent unit of polycycloalkane, a carbon number of 7 to 12 is preferred. Specific examples include an adamantane constituent unit, a norbornane constituent unit, an isobornane constituent unit, a tricyclodecane constituent unit, Cyclododecane constituting unit and the like.

酚醛清漆型環氧樹脂(Anv)除了構成單位(anv1)以外含有其他構成單位時之樹脂(Anv)中之各構成單位之比例並未特別限定,但相對於構成樹脂(Anv)之全部構成單位之合計,具有環氧基之構成單位 之合計較好為10~90莫耳%,更好為20~80莫耳%,又更好為30~70莫耳%。 The proportion of each constituent unit in the resin (Anv) when the novolac epoxy resin (Anv) contains other constituent units in addition to the constituent unit (anv1) is not particularly limited, but it is relative to all constituent units of the constituent resin (Anv) In total, the constituent units with epoxy groups The total is preferably 10 to 90 mole%, more preferably 20 to 80 mole%, and still more preferably 30 to 70 mole%.

市售品之酚醛清漆型環氧樹脂(Anv)舉例為例如JER-152、JER-154、JER-157S70、JER-157S65(以上為三菱化學(股)製)、EPICLON N-740、EPICLON N-740、EPICLON N-770、EPICLON N-775、EPICLON N-660、EPICLON N-665、EPICLON N-670、EPICLON N-673、EPICLON N-680、EPICLON N-690、EPICLON N-695、EPICLON HP5000、EPICLON HP7200(以上為DIC(股)製)、EOCN-1020(以上為日本化藥(股)製)等。 Examples of commercially available novolac epoxy resins (Anv) are, for example, JER-152, JER-154, JER-157S70, JER-157S65 (the above are manufactured by Mitsubishi Chemical Corporation), EPICLON N-740, EPICLON N- 740, EPICLON N-770, EPICLON N-775, EPICLON N-660, EPICLON N-665, EPICLON N-670, EPICLON N-673, EPICLON N-680, EPICLON N-690, EPICLON N-695, EPICLON HP5000, EPICLON HP7200 (above for DIC (stock) system), EOCN-1020 (above for Nippon Kayaku (stock) system), etc.

(2)雙酚型環氧樹脂(Abp) (2) Bisphenol epoxy resin (Abp)

作為雙酚型環氧樹脂(Abp),可使用以下述通式(abp1)表示之構造之環氧樹脂。 As the bisphenol type epoxy resin (Abp), an epoxy resin having a structure represented by the following general formula (abp1) can be used.

Figure TW201801906AD00013
Figure TW201801906AD00013

(式中,REP為含環氧基之基,Ra31、Ra32分別獨立為氫原子或碳數1~5之烷基,na31為1~50之整數)。 (In the formula, R EP is an epoxy-containing group, R a31 and R a32 are each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and na 31 is an integer of 1 to 50).

式(abp1)中,Ra31、Ra32之碳數1~5之烷基與上述式(anv0)中之Ra11、Ra12之碳數1~5之烷基相同。其中作為 Ra31、Ra32較好為氫原子或甲基。REP與上述式(anv0)中之REP相同,且較好為縮水甘油基。 In the formula (abp1), the alkyl group having 1 to 5 carbon atoms of R a31 and R a32 is the same as the alkyl group having 1 to 5 carbon atoms of R a11 and R a12 in the above formula (anv0). Among them, R a31 and R a32 are preferably a hydrogen atom or a methyl group. And R EP (anv0) in the above formula R EP of the same, and preferably a glycidyl group.

作為雙酚型環氧樹脂(Abp),可舉例為例如JER-827、JER-828、JER-834、JER-1001、JER-1002、JER-1003、JER-1055、JER-1007、JER-1009、JER-1010(以上為三菱化學(股)製)、EPICLON 860、EPICLON1050、EPICLON1051、EPICLON1055(以上為DIC(股)製)等;作為雙酚F型環氧樹脂可舉例為JER-806、JER-807、JER-4004、JER-4005、JER-4007、JER-4010(以上為三菱化學(股)製)、LCE-21、RE-602S(以上為日本化藥(股)製)等。 Examples of the bisphenol epoxy resin (Abp) include JER-827, JER-828, JER-834, JER-1001, JER-1002, JER-1003, JER-1055, JER-1007, and JER-1009. , JER-1010 (above are manufactured by Mitsubishi Chemical Corporation), EPICLON 860, EPICLON1050, EPICLON1051, EPICLON1055 (above are manufactured by DIC), etc .; Examples of bisphenol F-type epoxy resin are JER-806, JER -807, JER-4004, JER-4005, JER-4007, JER-4010 (the above are manufactured by Mitsubishi Chemical Corporation), LCE-21, RE-602S (the above are manufactured by Nippon Kayaku Corporation).

(3)脂環式環氧樹脂(A1) (3) Alicyclic epoxy resin (A1)

具有環氧基脂聚合性樹脂成分可使用脂環式環氧樹脂(A1)(以下有時稱為「(A1)成分」)。此處,脂環式環氧樹脂(A1)係以下述式(A1)表示。 As the epoxy-aliphatic polymerizable resin component, an alicyclic epoxy resin (A1) (hereinafter sometimes referred to as "(A1) component") can be used. The alicyclic epoxy resin (A1) is represented by the following formula (A1).

Figure TW201801906AD00014
Figure TW201801906AD00014

(式中,R1、R2分別獨立為可具有脂環式環氧基之有機基,至少R1、R2之任一者為具有脂環式環氧基者,Y1、Y2分別獨立為單鍵或2價連結基)。 (Wherein R 1 and R 2 are each independently an organic group which may have an alicyclic epoxy group, and at least one of R 1 and R 2 is an group having an alicyclic epoxy group, and Y 1 and Y 2 are each Independently, it is a single bond or a divalent linking group).

式(A1)中,R1、R2分別獨立為可具有脂環式環氧基 之有機基,至少R1、R2之任一者為具有脂環式環氧基。本實施形態中,所謂「可具有脂環式環氧基之有機基」不僅為脂環式環氧基與有機基之組成,亦包含僅由脂環式環氧基所成之基(有機基)。 In the formula (A1), R 1 and R 2 are each independently an organic group which may have an alicyclic epoxy group, and at least one of R 1 and R 2 is an alicyclic epoxy group. In this embodiment, the "organic group which may have an alicyclic epoxy group" includes not only a combination of an alicyclic epoxy group and an organic group, but also a group (organic group) composed of only alicyclic epoxy groups ).

作為有機基,可舉例為例如可具有取代基之直鏈狀、分支狀或環狀之烷基、可具有取代基之芳基、可具有取代基之雜芳基、可具有取代基之芳烷基、或可具有取代基之雜芳烷基。 Examples of the organic group include a linear, branched or cyclic alkyl group which may have a substituent, an aryl group which may have a substituent, a heteroaryl group which may have a substituent, and an arane which may have a substituent. Or a heteroaralkyl group which may have a substituent.

R1、R2之有機基可具有脂環式環氧基,至少R1、R2之任一者具有脂環式環氧基。R1、R2之可具有脂環式環氧基之有機基可分別不同,亦可相同。作為R1、R2,較好兩者均為具有脂環式環氧基之有機基,更好兩者係由脂環式環氧基所成之基,特佳為兩者均為1,2-環氧環己基。 The organic groups of R 1 and R 2 may have an alicyclic epoxy group, and at least one of R 1 and R 2 may have an alicyclic epoxy group. The organic groups of R 1 and R 2 which may have an alicyclic epoxy group may be different or the same. As R 1 and R 2 , both of them are preferably organic groups having an alicyclic epoxy group, more preferably both are groups formed from an alicyclic epoxy group, and particularly preferably, both are 1, 2-epoxycyclohexyl.

式(A1)中,Y1、Y2分別獨立為單鍵或2價連結基。作為2價連結基並未特別限定,但舉例為直鏈狀、分支鏈狀或構造中含環之脂肪族烴基或芳香族烴基。該脂肪族烴基或芳香族烴基可具有取代基。作為取代基舉例為烷基、烷氧基、鹵原子、鹵化烷基、羥基、羰基等。又,脂肪族烴基或芳香族烴基中,構成其構造之碳原子及氫原子之一部分可經含雜原子之取代基取代。作為含雜原子之取代基可舉例為-O-、-C(=O)-O-、-C(=O)-、-O-C(=O)-O-;-C(=O)-NH-、-NH-、-NH-C(=O)-O-、-NH-C(=NH)-(H亦可經烷基、醯基等之取代基取代); -S-、-S(=O)2-、-S(=O)2-O-、以通式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-C(=O)-O-Y21-、-[Y21-C(=O)-O]m”-Y22-或-Y21-O-C(=O)-Y22-表示之基[式中,Y21及Y22分別獨立為可具有取代基之2價烴基,較好為直鏈狀或分支鏈狀之伸烷基。式中之O為氧原子,m”為0~3之整數]等。 In formula (A1), Y 1 and Y 2 are each independently a single bond or a divalent linking group. The divalent linking group is not particularly limited, but examples thereof include a linear, branched, or ring-containing aliphatic hydrocarbon group or aromatic hydrocarbon group in the structure. The aliphatic hydrocarbon group or the aromatic hydrocarbon group may have a substituent. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, and a carbonyl group. In the aliphatic hydrocarbon group or the aromatic hydrocarbon group, a part of the carbon atom and the hydrogen atom constituting the structure may be substituted with a hetero atom-containing substituent. Examples of the hetero atom-containing substituent include -O-, -C (= O) -O-, -C (= O)-, -OC (= O) -O-; -C (= O) -NH -, -NH-, -NH-C (= O) -O-, -NH-C (= NH)-(H can also be substituted by substituents such as alkyl and fluorenyl); -S-, -S (= O) 2 -, - S (= O) 2 -O-, the formula -Y 21 -OY 22 -, - Y 21 -O -, - Y 21 -C (= O) -O -, - C (= O) -OY 21 -,-[Y 21 -C (= O) -O] m ”-Y 22 -or -Y 21 -OC (= O) -Y 22 -The basis [in the formula, Y 21 and Y 22 are each independently a divalent hydrocarbon group which may have a substituent, preferably a linear or branched alkylene. O in the formula is an oxygen atom, and m ”is an integer of 0 to 3] and the like .

Y21及Y22分別可不同亦可相同。Y21及Y22為2價連結基時,該2價連結基較好為可具有取代基之直鏈狀、分支鏈狀或構造中含環之脂肪族烴基,更好為可具有取代基之直鏈狀或分支鏈狀之脂肪族烴基,又更好為可具有取代基之直鏈狀或分支鏈狀之伸烷基。脂肪族烴基、伸烷基之碳數較好為1~30,更好為1~10,又更好為1~3。作為Y21、Y22較好為單鍵、亞甲基、伸乙基或伸丙基,更好為單鍵或亞甲基,特佳Y1為單鍵,Y2為亞甲基。 Y 21 and Y 22 may be different or the same. When Y 21 and Y 22 are divalent linking groups, the divalent linking group is preferably a linear, branched chain, or a ring-containing aliphatic hydrocarbon group having a substituent, and more preferably a substituent having a substituent. The linear or branched aliphatic hydrocarbon group is more preferably a linear or branched alkylene group which may have a substituent. The carbon number of the aliphatic hydrocarbon group and the alkylene group is preferably 1 to 30, more preferably 1 to 10, and even more preferably 1 to 3. Y 21 and Y 22 are preferably a single bond, methylene, ethylene or propyl, more preferably a single bond or methylene, particularly preferably Y 1 is a single bond, and Y 2 is a methylene group.

作為(A1)成分之較佳例舉例為下述式(A1-1)~(A1-2)表示之化合物。 Preferable examples of the component (A1) include compounds represented by the following formulae (A1-1) to (A1-2).

Figure TW201801906AD00015
Figure TW201801906AD00015

(式中,R1、R2與上述相同,Y02為單鍵或2價連結基,n1、n4分別獨立為0~3之整數,n2為0~10之整數,n3為0或1)。 (In the formula, R 1 and R 2 are the same as above, Y 02 is a single bond or a divalent linking group, n 1 and n 4 are each independently an integer of 0 to 3, n 2 is an integer of 0 to 10, and n 3 is 0 or 1).

式(A1-1)~(A1-2)中,R1、R2與上述相同,較好兩者為具有脂環式環氧基之有機基,更好兩者為脂環式環氧基。式(A1-1)~(A1-2)中,Y02為單鍵或2價連結基,作為2價連結基可舉例與上述Y1、Y2相同之基。其中較好為單鍵或可具有取代基之直鏈狀、分支鏈狀或構造中含環之脂肪族烴基。式(A1-1)~(A1-2)中,n1、n4分別獨立為0~3之整數,較好為0或1。式(A1-1)~(A1-2)中,n2為0~10之整數,較好為0~5之整數,又更好為0。式(A1-1)~(A1-2)中,n3為0或1,較好為0。 In the formulae (A1-1) to (A1-2), R 1 and R 2 are the same as above, preferably both are organic groups having an alicyclic epoxy group, and more preferably both are alicyclic epoxy groups . In the formulae (A1-1) to (A1-2), Y 02 is a single bond or a divalent linking group, and examples of the divalent linking group are the same as the above-mentioned Y 1 and Y 2 . Among them, a single bond or a linear, branched chain or a ring-containing aliphatic hydrocarbon group in the structure which may have a substituent is preferred. In the formulae (A1-1) to (A1-2), n 1 and n 4 are each independently an integer of 0 to 3, preferably 0 or 1. In the formulae (A1-1) to (A1-2), n 2 is an integer of 0 to 10, preferably an integer of 0 to 5, and more preferably 0. In the formulae (A1-1) to (A1-2), n 3 is 0 or 1, and preferably 0.

(A1)成分之具體例舉例如下。下述式中,n21為1~10之整數。 Specific examples of the (A1) component are as follows. In the following formula, n 21 is an integer of 1-10.

Figure TW201801906AD00016
Figure TW201801906AD00016

作為脂環式環氧化合物之市售品作為較佳者舉例為CELLOXIDE 2021、2021P、2081、2083、2085(DAICEL化學工業公司製)等。 Examples of commercially available alicyclic epoxy compounds include CELLOXIDE 2021, 2021P, 2081, 2083, and 2085 (manufactured by DAICEL Chemical Industry Co., Ltd.).

(4)多官能脂環式環氧樹脂(A2) (4) Multifunctional alicyclic epoxy resin (A2)

具有環氧基之聚合性樹脂成分可使用多官能脂環式環氧樹脂(A2)(以下有時稱為「(A2)成分」)。多官能脂環式環氧樹脂(A2)係不相當於上述(A1)成分之化合物。(A2)成分可為低分子化合物,亦可為高分子化合物,但較好為高分子化合物。(A2)成分為二官能以上之多官能環氧化合物,較好為三官能以上之環氧化合物。作為(A2)成分,基於耐藥品性、耐光性優異,較好為下述式(A2-1)表示之化合物。 As the polymerizable resin component having an epoxy group, a polyfunctional alicyclic epoxy resin (A2) (hereinafter sometimes referred to as "(A2) component") can be used. Polyfunctional alicyclic epoxy resin (A2) is a compound which does not correspond to the said (A1) component. The component (A2) may be a low-molecular compound or a high-molecular compound, but a high-molecular compound is preferred. (A2) The component is a polyfunctional epoxy compound having more than two functions, and preferably a trifunctional or more compound. The component (A2) is preferably a compound represented by the following formula (A2-1) because it is excellent in chemical resistance and light resistance.

Figure TW201801906AD00017
Figure TW201801906AD00017

(式中,R11係將具有q個活性氫基之有機化合物中之活性氫基去除之殘基。n11、n12、…nq分別獨立表示0~100之整數,其和為1~100。q表示1~100之整數。A具有含有取代基R12之氧基環己基骨架或含有取代基R12之氧基降冰片烯骨架,且以下述式(a1)或(a2)表示)。 (In the formula, R 11 is a residue from which active hydrogen groups in organic compounds having q active hydrogen groups are removed. N 11 , n 12 , ... n q each independently represent an integer from 0 to 100, and the sum is 1 to 100.q integer of 1 to 100. .A having a substituent group R 12 of cyclohexyl skeleton or a substituent group R 12 of a norbornene skeleton, and represented by the following formula (a1) or (A2)) .

Figure TW201801906AD00018
Figure TW201801906AD00018

(式中,R12分別獨立為下述式(a11)~(a13)表示之基,式(A2-1)表示之化合物含有1個以上以(a11)表示之基。式(a1)、(a2)表示之基,於波折線之鍵結鍵中係鍵結於式(A2-1)表示之化合物中之R11,於*標記之鍵結鍵中係鍵結於式(A2-1)表示之化合物中之氫原子(H))。 (In the formula, R 12 is independently a group represented by the following formulae (a11) to (a13), and a compound represented by the formula (A2-1) contains one or more groups represented by (a11). Formulas (a1), ( a2) represents a base, which is bound to the R 11 in the compound represented by the formula (A2-1) in the bond of the fold line, and is bound to the formula (A2-1) in the * -labeled bond. (A hydrogen atom (H)) in the represented compound.

Figure TW201801906AD00019
Figure TW201801906AD00019

(R13表示烷基、烷羰基或芳羰基。式(a11)~(a13)表示之基,係於波折線之鍵結鍵中鍵結於式(a1)、(a2)表示之基)。 (R 13 represents an alkyl group, an alkyl carbonyl group, or an aryl carbonyl group. The groups represented by the formulae (a11) to (a13) are the bonds represented by the wave-shaped lines, and are bonded to the groups represented by the formulae (a1) and (a2)).

上述式(A2-1)中,R11係將具有活性氫基之有機化合物中之活性氫基去除之殘基,作為其前驅物之「具有活性氫基之有機化合物」舉例為醇類、酚類、羧酸類、胺類、硫醇類等。 In the above formula (A2-1), R 11 is a residue from which an active hydrogen group is removed from an organic compound having an active hydrogen group. Examples of the "organic compound having an active hydrogen group" as a precursor thereof are alcohols and phenols. Types, carboxylic acids, amines, thiols, etc.

上述醇類可為1元醇亦可為多元醇。具體而言,舉例為甲醇、乙醇、丙醇、丁醇、戊醇、己醇、辛醇等之脂肪族醇;苄醇等之芳香族醇;乙二醇、二乙二醇、三乙二醇、聚乙二醇、丙二醇、二丙二醇、1,3-丁二醇、1,4-丁二醇、戊二醇、1,6-己二醇、新戊二醇、羥基丙酮酸新戊二醇酯、環己烷二甲醇、甘油、二甘油、聚甘油、 三羥甲基丙烷、三羥甲基乙烷、季戊四醇、二季戊四醇等之多元醇等。作為上述酚類舉例為苯酚、甲酚、鄰苯二酚、連苯三酚、對苯二酚、對苯二酚單甲醚、雙酚A、雙酚F、4,4’-二羥基二苯甲酮、雙酚S、酚樹脂、甲酚酚醛清漆樹脂等。作為上述羧酸類舉例為甲酸、乙酸、丙酸、丁酸、動植物油之脂肪酸、富馬酸、馬來酸、己二酸、十二烷二酸、偏苯三酸、均苯四酸、聚丙烯酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸等。又,舉例為乳酸、檸檬酸、氧基己酸等之同時具有羥基與羧基之化合物。作為上述胺類舉例為單甲胺、二甲胺、單乙胺、二乙胺、丙胺、單丁胺、二丁胺、戊胺、己胺、環己胺、辛胺、十二烷胺、4,4’-二胺基二苯基甲烷、異佛酮二胺、甲苯二胺、六亞甲基二胺、二甲苯二胺、二伸乙三胺、三伸乙四胺、乙醇胺等。作為上述硫醇類舉例為甲基硫醇、乙基硫醇、丙基硫醇、苯基硫醇等之硫醇類;乙二醇二巰基丙酸酯、三羥甲基丙烷三巰基丙酸酯、季戊四醇四巰基丙酸酯等之巰基丙酸或巰基丙酸之多元醇酯;等。 The alcohol may be a monohydric alcohol or a polyhydric alcohol. Specifically, examples include aliphatic alcohols such as methanol, ethanol, propanol, butanol, pentanol, hexanol, and octanol; aromatic alcohols such as benzyl alcohol; ethylene glycol, diethylene glycol, and triethylene glycol Alcohol, polyethylene glycol, propylene glycol, dipropylene glycol, 1,3-butanediol, 1,4-butanediol, pentanediol, 1,6-hexanediol, neopentyl glycol, neopentyl hydroxypyruvate Glycol esters, cyclohexanedimethanol, glycerol, diglycerol, polyglycerol, Polyols such as trimethylolpropane, trimethylolethane, pentaerythritol, and dipentaerythritol. Examples of the above phenols are phenol, cresol, catechol, pyrogallol, hydroquinone, hydroquinone monomethyl ether, bisphenol A, bisphenol F, 4,4'-dihydroxydiol Benzophenone, bisphenol S, phenol resin, cresol novolac resin, etc. Examples of the aforementioned carboxylic acids are formic acid, acetic acid, propionic acid, butyric acid, fatty acids of animal and vegetable oils, fumaric acid, maleic acid, adipic acid, dodecanedioic acid, trimellitic acid, pyromellitic acid, poly Acrylic acid, phthalic acid, isophthalic acid, terephthalic acid, etc. Examples of the compound include lactic acid, citric acid, and oxyhexanoic acid, and compounds having both a hydroxyl group and a carboxyl group. Examples of the amines are monomethylamine, dimethylamine, monoethylamine, diethylamine, propylamine, monobutylamine, dibutylamine, pentylamine, hexylamine, cyclohexylamine, octylamine, dodecylamine, 4,4'-diaminodiphenylmethane, isophoronediamine, toluenediamine, hexamethylenediamine, xylenediamine, diethylene glycol triamine, triethylene glycol tetraamine, ethanolamine and the like. Examples of the thiols include thiols such as methyl mercaptan, ethyl mercaptan, propyl mercaptan, and phenyl mercaptan; ethylene glycol dimercaptopropionate, trimethylolpropane trimercaptopropionic acid Ester, pentaerythritol tetramercaptopropionate, and the like;

再者,作為具有活性氫基之有機化合物亦舉例為聚乙烯醇、聚乙酸乙烯酯部分水解物、澱粉、纖維素、纖維素乙酸酯、纖維素乙酸酯丁酸酯、羥乙基纖維素、丙烯酸多元醇樹脂、苯乙烯丙烯醇共聚合樹脂、苯乙烯馬來酸共聚合樹脂、醇酸樹脂、聚酯多元醇、聚酯羧酸樹脂、聚己內酯多元醇樹脂、聚丙烯多元醇、聚四亞甲基二醇等。 Examples of the organic compound having an active hydrogen group include polyvinyl alcohol, polyvinyl acetate partial hydrolysate, starch, cellulose, cellulose acetate, cellulose acetate butyrate, and hydroxyethyl fiber. Element, acrylic polyol resin, styrene acryl alcohol copolymer resin, styrene maleic acid copolymer resin, alkyd resin, polyester polyol, polyester carboxylic acid resin, polycaprolactone polyol resin, polypropylene polyol Alcohol, polytetramethylene glycol, etc.

具有活性氫基之有機化合物於其骨架中亦可具有不飽和雙鍵。作為具體例舉例為烯丙醇、丙烯酸、甲基丙烯酸、3-環己烯甲醇、四氫鄰苯二甲酸等。以上之具有活性氫基之有機化合物可單獨使用,亦可組合2種以上使用。 The organic compound having an active hydrogen group may have an unsaturated double bond in its skeleton. Specific examples include allyl alcohol, acrylic acid, methacrylic acid, 3-cyclohexene methanol, and tetrahydrophthalic acid. The above organic compounds having an active hydrogen group may be used alone or in combination of two or more kinds.

上述式(A2-1)中,n11、n12、…nq分別獨立表示0~100之整數,其和為1~100。且,q表示1~100之整數。其中n11、n12、…nq較好分別獨立為2~10之整數,更好為3~6之整數。又,n11、n12、…nq之和較好為4~30,更好為4~20。藉由使上述和為4以上,可提高硬化後之交聯密度,提高硬度。又,藉由使上述和為30以下,可提高對溶劑之溶解性,提高處理性。 In the above formula (A2-1), n 11 , n 12 ,... N q each independently represent an integer of 0 to 100, and the sum is 1 to 100. In addition, q represents an integer from 1 to 100. Among them, n 11 , n 12 , ... n q are each preferably an integer of 2 to 10, more preferably an integer of 3 to 6. The sum of n 11 , n 12 , ... n q is preferably 4 to 30, more preferably 4 to 20. When the sum is 4 or more, the crosslinking density after hardening can be increased and the hardness can be increased. Moreover, when the said sum is 30 or less, the solubility to a solvent can be improved and handling property can be improved.

上述式(A2-1)中,A具有含有取代基R12之氧基環己基骨架或含有取代基R12之氧基降冰片烯骨架,且以上述式(a1)或(a2)表示。又A較好為以上述式(a1)表示。又q個A分別可相同亦可不同。 In the formula (A2-1), A represents a substituent group and having a cyclohexyl group or the backbone group R 12 R 12 group-containing substituent group of the norbornene skeleton in the above formula (a1) or (a2). A is preferably represented by the formula (a1). The q As may be the same or different.

上述式(A2-1)表示之環氧基化合物中,必須含1個以上以上述式(a11)表示之基,越多越好。另一方面,以上述式(a13)表示之基則越少越好。 The epoxy compound represented by the formula (A2-1) must contain one or more groups represented by the formula (a11), and the more the better. On the other hand, the fewer the bases represented by the formula (a13), the better.

上述式(A2-1)表示之環氧基化合物可如日本特公平7-119270號公報中記載般,藉由以具有活性氫基之有機化合物作為起始劑,使4-乙烯基環己烯-1-氧化物或5-乙烯基雙環[2.2.1]庚-2-烯-2-氧化物與具有1個環氧基之化合物之混合物進行開環聚合而獲得之聚醚樹脂,亦即具 有乙烯基側鏈及環己烷骨架或者具有乙烯基側鏈及降冰片烯骨架之聚醚樹脂以過乙酸或過氧化氫予以環氧化而製造。作為市售品之較佳者舉例為DAICEL化學工業公司製之EHPE3150(n11~nq之和平均為15)。 The epoxy compound represented by the above formula (A2-1) can be 4-vinylcyclohexene, as described in Japanese Patent Publication No. 7-119270, by using an organic compound having an active hydrogen group as a starter. Polyether resin obtained by ring-opening polymerization of a mixture of -1-oxide or 5-vinylbicyclo [2.2.1] hept-2-ene-2-oxide and a compound having 1 epoxy group, that is, A polyether resin having a vinyl side chain and a cyclohexane skeleton or a vinyl side chain and a norbornene skeleton is produced by epoxidation with peracetic acid or hydrogen peroxide. A commercially available product is, for example, EHPE3150 (average of n 11 to n q is 15) manufactured by DAICEL Chemical Industry Co., Ltd.

又,藉由併用脂環式環氧樹脂(A1)與多官能脂環式環氧樹脂(A2),而調製接著劑組成物時之(A1)成分與(A2)成分之調配比為(A1)/(A2)=70/30~51/49(質量比),更好為70/30~60/40(質量比)。藉由成為上述調配比,可使所得接著劑組成物之熔融黏度在後述之較佳範圍。藉此,可以膜厚均一之方式塗佈接著劑組成物。又,可形成具備高耐藥品性之接著層。併用脂環式環氧樹脂(A1)與多官能脂環式環氧樹脂(A2)之環氧樹脂之市售品,舉例較佳者為例如DAICEL化學工業公司製之EHPE3150CE。 In addition, by using the alicyclic epoxy resin (A1) and the polyfunctional alicyclic epoxy resin (A2) together, the compounding ratio of the (A1) component and the (A2) component when preparing the adhesive composition is (A1) ) / (A2) = 70/30 ~ 51/49 (mass ratio), more preferably 70/30 ~ 60/40 (mass ratio). By setting the blending ratio as described above, the melt viscosity of the obtained adhesive composition can be in a preferable range described later. Thereby, the adhesive composition can be applied in a uniform film thickness. Moreover, an adhesive layer having high chemical resistance can be formed. Commercial products of epoxy resins in which an alicyclic epoxy resin (A1) and a polyfunctional alicyclic epoxy resin (A2) are used in combination. For example, EHPE3150CE manufactured by DAICEL Chemical Industry Company is preferred.

(5)具有環氧基之丙烯酸樹脂(Aac) (5) Acrylic resin (Aac) with epoxy group

具有環氧基之聚合性樹脂成分可使用使至少例如不飽和羧酸及具有環氧基及乙烯性不飽和雙鍵之化合物共聚合而得之具有環氧基之丙烯酸樹脂(Aac)。 As the polymerizable resin component having an epoxy group, an acrylic resin (Aac) having an epoxy group obtained by copolymerizing at least an unsaturated carboxylic acid and a compound having an epoxy group and an ethylenically unsaturated double bond can be used.

作為不飽和羧酸舉例為(甲基)丙烯酸、巴豆酸等之單羧酸;馬來酸、富馬酸、檸康酸、中康酸、依康酸等之二羧酸;該等二羧酸之酸酐;等。該等中,基於共聚合反應性、所得樹脂之鹼溶解性、取得容易性等觀之,較好為(甲基)丙烯酸及馬來酸酐。該等不飽和羧酸 可單獨使用或組合2種以上使用。 Examples of unsaturated carboxylic acids are monocarboxylic acids such as (meth) acrylic acid and crotonic acid; dicarboxylic acids such as maleic acid, fumaric acid, citraconic acid, mesaconic acid, and itaconic acid; and the like Acid anhydride; etc. Among these, (meth) acrylic acid and maleic anhydride are preferred from the viewpoints of copolymerization reactivity, alkali solubility of the obtained resin, and availability. Unsaturated carboxylic acids They can be used alone or in combination of two or more.

又,本說明書中,所謂「(甲基)丙烯酸」意指丙烯酸及甲基丙烯酸之兩者。 In addition, in this specification, "(meth) acrylic acid" means both acrylic acid and methacrylic acid.

又,本說明書中,所謂「具有乙烯性不飽和雙鍵之化合物」亦稱為「不飽和化合物」。 In the present specification, the "compound having an ethylenically unsaturated double bond" is also referred to as an "unsaturated compound".

具有環氧基之丙烯酸樹脂中所佔之源自不飽和羧酸之構成單位(具有羧基之構成單位)之比例較好為5~29質量%,更好為10~25質量%。 The proportion of the constituent units derived from the unsaturated carboxylic acid (the constituent unit having a carboxyl group) in the acrylic resin having an epoxy group is preferably 5 to 29% by mass, more preferably 10 to 25% by mass.

所謂不飽和羧酸舉例為(甲基)丙烯酸、巴豆酸等之單羧酸;馬來酸、富馬酸、檸康酸、中康酸、依康酸等之二羧酸;該等二羧酸之酸酐;等。該等中,基於共聚合反應性、所得樹脂之鹼溶解性、取得容易性等觀之,較好為(甲基)丙烯酸及馬來酸酐。該等不飽和羧酸可單獨使用或組合2種以上使用。 Examples of the so-called unsaturated carboxylic acids are monocarboxylic acids such as (meth) acrylic acid and crotonic acid; dicarboxylic acids such as maleic acid, fumaric acid, citraconic acid, mesaconic acid, and itaconic acid; and these dicarboxylic acids Acid anhydride; etc. Among these, (meth) acrylic acid and maleic anhydride are preferred from the viewpoints of copolymerization reactivity, alkali solubility of the obtained resin, and availability. These unsaturated carboxylic acids can be used alone or in combination of two or more.

具有環氧基及乙烯性不飽和雙鍵之化合物亦可為不具有脂環式環氧基者,亦可為具有脂環式環氧基者,但更好為具有脂環式環氧基者。 The compound having an epoxy group and an ethylenically unsaturated double bond may be one having no alicyclic epoxy group, or one having an alicyclic epoxy group, but more preferably one having an alicyclic epoxy group .

作為具有並非脂環式環氧基之環氧基及乙烯性不飽和雙鍵之化合物舉例為(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸2-甲基縮水甘油酯、(甲基)丙烯酸3,4-環氧基丁酯、(甲基)丙烯酸6,7-環氧基庚酯、(甲基)丙烯酸3,4-環氧基環己酯等之(甲基)丙烯酸環氧基烷酯類;α-乙基丙烯酸縮水甘油酯、α-正丙基丙烯酸縮水甘油酯、α-正丁基丙烯酸縮水甘油酯、α-乙基丙烯酸6,7- 環氧庚酯等之α-烷基丙烯酸環氧基烷酯類;鄰-乙烯基苄基縮水甘油醚、間-乙烯基苄基縮水甘油醚、對-乙烯基苄基縮水甘油醚等之縮水甘油醚類;等。該等中,基於共聚合反應性、硬化後之樹脂強度等之觀點,較好為(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸2-甲基縮水甘油酯、(甲基)丙烯酸6,7-環氧基庚酯、鄰-乙烯基苄基縮水甘油醚、間-乙烯基苄基縮水甘油醚、對-乙烯基苄基縮水甘油醚。 Examples of the compound having an epoxy group and an ethylenically unsaturated double bond other than an alicyclic epoxy group include glycidyl (meth) acrylate, 2-methyl glycidyl (meth) acrylate, and (meth) (Meth) acrylic epoxy such as 3,4-epoxybutyl acrylate, 6,7-epoxyheptyl (meth) acrylate, 3,4-epoxycyclohexyl (meth) acrylate, etc. Alkyl esters; α-ethyl acrylate, glycidyl α-n-propyl acrylate, glycidyl α-n-butyl acrylate, α-ethyl acrylate 6,7- Α-alkylacrylic epoxy alkyl esters such as epoxy heptyl; shrinkage of o-vinyl benzyl glycidyl ether, m-vinyl benzyl glycidyl ether, p-vinyl benzyl glycidyl ether, etc. Glyceryl ethers; etc. Among these, from the viewpoints of copolymerization reactivity, resin strength after curing, and the like, glycidyl (meth) acrylate, 2-methyl glycidyl (meth) acrylate, and (meth) acrylic acid 6 are preferred. , 7-epoxyheptyl, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether.

具有脂環式環氧基的環氧基及乙烯性不飽和雙鍵之化合物之脂環式基可為單環亦可為多環。作為單環之脂環式基舉例為環戊基、環己基等。且,作為多環之脂環式基舉例為降冰片基、異冰片基、三環壬基、三環癸基、四環十二烷基等。 The alicyclic group of the compound having an alicyclic epoxy group and an ethylenically unsaturated double bond may be monocyclic or polycyclic. Examples of the monocyclic alicyclic group include cyclopentyl, cyclohexyl, and the like. Examples of the polycyclic alicyclic group include norbornyl, isobornyl, tricyclononyl, tricyclodecyl, and tetracyclododecyl.

具體而言,作為具有脂環式環氧基的環氧基及乙烯性不飽和雙鍵之化合物舉例為例如下述式(a4-1)~(a4-16)表示之化合物。該等中,為了使接著劑組成物之硬化性為適度者,較好為下述式(a4-1)~(a4-6)表示之化合物,更好為下述式(a4-1)~(a4-4)表示之化合物。 Specifically, examples of the compound having an alicyclic epoxy group and an ethylenically unsaturated double bond include compounds represented by the following formulae (a4-1) to (a4-16). Among these, in order to make the hardenability of the adhesive composition moderate, the compounds represented by the following formulae (a4-1) to (a4-6) are preferred, and the following formulae (a4-1) to are more preferred (a4-4).

Figure TW201801906AD00020
Figure TW201801906AD00020

Figure TW201801906AD00021
Figure TW201801906AD00021

Figure TW201801906AD00022
Figure TW201801906AD00022

上述式中,Ra3表示氫原子或甲基,Ra4表示碳數1~6之2價脂肪族飽和烴基,Ra5表示碳數1~10之2價烴基,n表示0~10之整數。作為Ra4,較好為直鏈狀或分支鏈狀之伸烷基,例如亞甲基、伸乙基、伸丙基、四亞甲基、乙基伸乙基、五亞甲基、六亞甲基。作為Ra5,較好為例如亞甲基、伸乙基、伸丙基、四亞甲基、乙基伸乙基、五亞甲基、六亞甲基、伸苯基、環伸己基、-CH2-Ph-CH2-(Ph表示伸苯基)。 In the above formula, R a3 represents a hydrogen atom or a methyl group, R a4 represents a divalent aliphatic saturated hydrocarbon group having 1 to 6 carbon atoms, R a5 represents a divalent hydrocarbon group having 1 to 10 carbon atoms, and n represents an integer of 0 to 10. R a4 is preferably a linear or branched alkylene group, such as methylene, ethylidene, propylidene, tetramethylene, ethylidene, pentamethylene, and hexamethylene base. R a5 is preferably, for example, methylene, ethylidene, propylidene, tetramethylene, ethylidene, pentamethylene, hexamethylene, phenylene, cyclohexyl, or -CH. 2- Ph-CH 2- (Ph stands for phenylene).

該等之具有環氧基與乙烯性不飽和鍵之化合物可單獨使用或組合2種以上使用。 These compounds having an epoxy group and an ethylenically unsaturated bond can be used alone or in combination of two or more.

具有環氧基之丙烯酸樹脂中所佔之源自具有環氧基之不飽和化合物之構成單位(具有環氧基之構成單 位)之比例較好為5~90質量%,更好為15~85質量%,特佳為50~85質量%。藉由成為上述範圍,可較好地使具有環氧基之丙烯酸樹脂硬化。 The constituting unit derived from the unsaturated compound having an epoxy group in the acrylic resin having an epoxy group (the constituent unit having an epoxy group The ratio of bit is preferably 5 to 90% by mass, more preferably 15 to 85% by mass, and particularly preferably 50 to 85% by mass. By setting it as the said range, the acrylic resin which has an epoxy group can be hardened suitably.

具有環氧基之丙烯酸樹脂較好為具有脂環式基與乙烯性不飽和雙鍵之化合物進一步共聚合者。 The acrylic resin having an epoxy group is preferably one in which a compound having an alicyclic group and an ethylenically unsaturated double bond is further copolymerized.

具有脂環式基與乙烯性不飽和雙鍵之化合物之脂環基可為單環亦可為多環。作為單環之脂環式基舉例為環戊基、環己基等。且,作為多環之脂環式基舉例為金剛烷基、降冰片基、異冰片基、三環壬基、三環癸基、四環十二烷基等。 The alicyclic group of the compound having an alicyclic group and an ethylenically unsaturated double bond may be monocyclic or polycyclic. Examples of the monocyclic alicyclic group include cyclopentyl, cyclohexyl, and the like. Examples of the polycyclic alicyclic group include adamantyl, norbornyl, isobornyl, tricyclononyl, tricyclodecyl, and tetracyclododecyl.

具體而言,作為具有脂環式基與乙烯性不飽和雙鍵之化合物舉例為下述式(a5-1)~(a5-8)表示之化合物。該等中,為了使接著劑組成物之硬化性成為適度者,較好為下述式(a5-3)~(a5-8)表示之化合物,更好為下述式(a5-3)、(a5-4)表示之化合物。 Specifically, examples of the compound having an alicyclic group and an ethylenically unsaturated double bond include compounds represented by the following formulae (a5-1) to (a5-8). Among these, in order to make the hardenability of the adhesive composition moderate, compounds represented by the following formulae (a5-3) to (a5-8) are preferable, and the following formulae (a5-3), (a5-4).

Figure TW201801906AD00023
Figure TW201801906AD00023

Figure TW201801906AD00024
Figure TW201801906AD00024

上述式中,Ra6表示氫原子或甲基,Ra7表示單鍵或碳數1~6之2價脂肪族飽和烴基,Ra8表示氫原子或碳數1~5之烷基。作為Ra7,較好為單鍵、直鏈狀或分支鏈狀 之伸烷基,例如亞甲基、伸乙基、伸丙基、四亞甲基、乙基伸乙基、五亞甲基、六亞甲基。作為Ra8,較好為例如甲基、乙基。 In the above formula, R a6 represents a hydrogen atom or a methyl group, R a7 represents a single bond or a divalent aliphatic saturated hydrocarbon group having 1 to 6 carbon atoms, and R a8 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. R a7 is preferably a single bond, linear or branched alkylene, such as methylene, ethylidene, propylidene, tetramethylene, ethylidene, pentamethylene, Hexamethylene. R a8 is preferably, for example, a methyl group or an ethyl group.

具有環氧基之丙烯酸樹脂中所佔之源自具有脂環式基與乙烯性不飽和雙鍵之化合物之構成單位之比例較好為1~40質量%,更好為5~30質量%。 The proportion of the constituent units derived from the compound having an alicyclic group and an ethylenically unsaturated double bond in the acrylic resin having an epoxy group is preferably 1 to 40% by mass, more preferably 5 to 30% by mass.

又,具有環氧基之丙烯酸樹脂亦可為進而共聚合有上述以外之其他化合物者。該等其他化合物舉例為(甲基)丙烯酸酯類、(甲基)丙烯醯胺類、烯丙基化合物、乙烯基醚類、乙烯基酯類、苯乙烯類等。該等化合物可單獨使用或組合2種以上使用。 The acrylic resin having an epoxy group may be one in which other compounds than those described above are further copolymerized. Examples of such other compounds include (meth) acrylates, (meth) acrylamides, allyl compounds, vinyl ethers, vinyl esters, and styrenes. These compounds can be used alone or in combination of two or more.

作為(甲基)丙烯酸酯類舉例為(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸第三辛酯等之直鏈狀或分支鏈狀之(甲基)丙烯酸烷酯;(甲基)丙烯酸氯乙酯、(甲基)丙烯酸2,2-二甲基羥基丙酯、(甲基)丙烯酸2-羥基乙酯、三羥甲基丙烷單(甲基)丙烯酸酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸糠酯等。 Examples of (meth) acrylates are methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, amyl (meth) acrylate, and tert-octyl (meth) acrylate Linear or branched alkyl (meth) acrylates such as esters; chloroethyl (meth) acrylate, 2,2-dimethylhydroxypropyl (meth) acrylate, (meth) acrylic acid 2 -Hydroxyethyl ester, trimethylolpropane mono (meth) acrylate, benzyl (meth) acrylate, furfuryl (meth) acrylate, and the like.

作為(甲基)丙烯醯胺類舉例為(甲基)丙烯醯胺、N-烷基(甲基)丙烯醯胺、N-芳基(甲基)丙烯醯胺、N,N-二烷基(甲基)丙烯醯胺、N,N-芳基(甲基)丙烯醯胺、N-甲基-N-苯基(甲基)丙烯醯胺、N-羥基乙基-N-甲基(甲基)丙烯醯胺等。 Examples of (meth) acrylamide are (meth) acrylamide, N-alkyl (meth) acrylamide, N-aryl (meth) acrylamide, N, N-dialkyl (Meth) acrylamide, N, N-aryl (meth) acrylamide, N-methyl-N-phenyl (meth) acrylamide, N-hydroxyethyl-N-methyl ( (Meth) acrylamide and the like.

作為烯丙基化合物舉例為乙酸烯丙酯、己酸 烯丙酯、辛酸烯丙酯、月桂酸烯丙酯、棕櫚酸烯丙酯、硬脂酸烯丙酯、苯甲酸烯丙酯、乙醯乙酸烯丙酯、乳酸烯丙酯等之烯丙酯類;烯丙氧基乙醇;等。 Examples of allyl compounds are allyl acetate, hexanoic acid Allyl, allyl octanoate, allyl laurate, allyl palmitate, allyl stearate, allyl benzoate, allyl acetoacetate, allyl lactate, etc. Class; allyloxyethanol; etc.

作為乙烯基醚類舉例為己基乙烯基醚、辛基乙烯基醚、癸基乙烯基醚、乙基己基乙烯基醚、甲氧基乙基乙烯基醚、乙氧基乙基乙烯基醚、氯乙基乙烯基醚、1-甲基-2,2-二甲基丙基乙烯基醚、2-乙基丁基乙烯基醚、羥基乙基乙烯基醚、二乙二醇乙烯基醚、二甲胺基乙基乙烯基醚、二乙胺基乙基乙烯基醚、丁胺基乙基乙烯基醚、苄基乙烯基醚、四氫糠基基乙烯基醚等之烷基乙烯基醚;乙烯基苯基醚、乙烯基甲苯基醚、乙烯基氯苯基醚、乙烯基-2,4-二氯苯基醚、乙烯基萘基醚、乙烯基蒽基醚等之乙烯基芳基醚;等。 Examples of vinyl ethers are hexyl vinyl ether, octyl vinyl ether, decyl vinyl ether, ethylhexyl vinyl ether, methoxyethyl vinyl ether, ethoxyethyl vinyl ether, chlorine Ethyl vinyl ether, 1-methyl-2,2-dimethylpropyl vinyl ether, 2-ethylbutyl vinyl ether, hydroxyethyl vinyl ether, diethylene glycol vinyl ether, diethyl ether Alkyl vinyl ethers such as methylamino ethyl vinyl ether, diethylamino ethyl vinyl ether, butylamino ethyl vinyl ether, benzyl vinyl ether, tetrahydrofurfuryl vinyl ether; Vinyl aryl ethers such as vinyl phenyl ether, vinyl tolyl ether, vinyl chlorophenyl ether, vinyl-2,4-dichlorophenyl ether, vinyl naphthyl ether, vinyl anthryl ether, etc. ;Wait.

作為乙烯基酯類舉例為丁酸乙烯酯、異丁酸乙烯酯、三甲基乙酸乙烯酯、二乙基乙酸乙烯酯、戊酸乙烯酯、己酸乙烯酯、氯乙酸乙烯酯、二氯乙酸乙烯酯、甲氧基乙酸乙烯酯、丁氧基乙酸乙烯酯、苯基乙酸乙烯酯、乙醯乙酸乙烯酯、乳酸乙烯酯、β-苯基丁酸乙烯酯、苯甲酸乙烯酯、水楊酸乙烯酯、氯苯甲酸乙烯酯、四氯苯甲酸乙烯酯、萘甲酸乙烯酯等。 Examples of vinyl esters are vinyl butyrate, vinyl isobutyrate, trimethyl vinyl acetate, diethyl vinyl acetate, vinyl valerate, vinyl hexanoate, vinyl chloroacetate, and dichloroacetic acid. Vinyl Ester, Vinyl Methoxy Acetate, Vinyl Butoxy Ethyl Acetate, Vinyl Phenyl Acetate, Vinyl Acetate, Vinyl Lactate, Vinyl β-Phenyl Butyrate, Vinyl Benzoate, Salicylic Acid Vinyl ester, vinyl chlorobenzoate, vinyl tetrachlorobenzoate, vinyl naphthalate and the like.

作為苯乙烯類舉例為苯乙烯;甲基苯乙烯、二甲基苯乙烯、三甲基苯乙烯、乙基苯乙烯、二乙基苯乙烯、異丙基苯乙烯、丁基苯乙烯、己基苯乙烯、環己基苯乙烯、癸基苯乙烯、苄基苯乙烯、氯甲基苯乙烯、三氟甲 基苯乙烯、乙氧基甲基苯乙烯、乙醯氧基甲基苯乙烯等之烷基苯乙烯;甲氧基苯乙烯、4-甲氧基-3-甲基苯乙烯、二甲氧基苯乙烯等之烷氧基苯乙烯;氯苯乙烯、二氯苯乙烯、三氯苯乙烯、四氯苯乙烯、五氯苯乙烯、溴苯乙烯、二溴苯乙烯、碘苯乙烯、氟苯乙烯、三氟苯乙烯、2-溴-4-三氟甲基苯乙烯、4-氟-3-三氟甲基苯乙烯等之鹵苯乙烯;等。 Examples of styrenes are styrene; methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, diethylstyrene, isopropylstyrene, butylstyrene, hexylbenzene Ethylene, cyclohexylstyrene, decylstyrene, benzylstyrene, chloromethylstyrene, trifluoromethyl Alkyl styrene, ethoxymethylstyrene, ethoxymethylstyrene, etc .; methoxystyrene, 4-methoxy-3-methylstyrene, dimethoxy Alkoxystyrene such as styrene; chlorostyrene, dichlorostyrene, trichlorostyrene, tetrachlorostyrene, pentachlorostyrene, bromostyrene, dibromostyrene, iodostyrene, fluorostyrene , Trifluorostyrene, 2-bromo-4-trifluoromethylstyrene, 4-fluoro-3-trifluoromethylstyrene, etc .;

具有環氧基之丙烯酸樹脂之重量平均分子量較好為2000~50000,更好為3000~30000。 The weight average molecular weight of the acrylic resin having an epoxy group is preferably from 2,000 to 50,000, more preferably from 3,000 to 30,000.

(2.具有乙烯性不飽和雙鍵之聚合性樹脂成分) (2. Polymerizable resin component having ethylenically unsaturated double bonds)

具有乙烯性不飽和雙鍵之聚合性樹脂成分若為1分子中具有用以藉由加熱或曝光而硬化之充分乙烯性不飽和雙鍵,則可為低分子化合物,亦可為均聚物、共聚合樹脂等之聚合物。該等中更佳之具有乙烯性不飽和雙鍵之聚合性樹脂成分之具體例顯示如下。 If the polymerizable resin component having an ethylenically unsaturated double bond has a sufficient ethylenically unsaturated double bond in one molecule to be hardened by heating or exposure, it may be a low-molecular compound, a homopolymer, or Polymers such as copolymer resins. Specific examples of the polymerizable resin component having a more preferable ethylenically unsaturated double bond among these are shown below.

(1)具有乙烯性不飽和雙鍵之低分子化合物 (1) Low molecular compounds with ethylenically unsaturated double bonds

具有乙烯性不飽和雙鍵之低分子化合物典型上可舉例為(甲基)丙烯酸與多元醇或多元羧酸縮合之縮合物,或具有羥基或胺基、巰基等之官能基之不飽和羧酸酯或醯胺類與多元醇或多元羧酸經由異氰酸酯基或環氧基而加成聚合之加成聚合物的多官能單體與具有乙烯性不飽和雙鍵之單官能單體。 The low-molecular compound having an ethylenically unsaturated double bond is typically exemplified by a condensate of (meth) acrylic acid and a polyhydric alcohol or polycarboxylic acid, or an unsaturated carboxylic acid having a functional group such as a hydroxyl group, an amino group, or a mercapto group. Polyfunctional monomers of addition polymers in which esters or amidines and polyhydric alcohols or polycarboxylic acids are polymerized via isocyanate groups or epoxy groups, and monofunctional monomers having ethylenically unsaturated double bonds.

作為多官能單體舉例為乙二醇二(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、丙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、丁二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、甘油三(甲基)丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、二季戊四醇六丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、2,2-雙(4-(甲基)丙烯醯氧基二乙氧基苯基)丙烷、2,2-雙(4-(甲基)丙烯醯氧基聚乙氧基苯基)丙烷、2-羥基-3-(甲基)丙烯醯氧基丙基(甲基)丙烯酸酯、乙二醇二縮水甘油醚二(甲基)丙烯酸酯、二乙二醇二縮水甘油醚二(甲基)丙烯酸酯、鄰苯二甲酸二縮水甘油酯二(甲基)丙烯酸酯、甘油三丙烯酸酯、甘油聚縮水甘油醚聚(甲基)丙烯酸酯、胺基甲酸酯(甲基)丙烯酸酯(即甲苯二異氰酸酯)、三甲基六亞甲基二異氰酸酯與六亞甲基二異氰酸酯與(甲基)丙烯酸2-羥基乙酯之反應物、苯乙烯雙(甲基)丙烯醯胺、(甲基)丙烯醯胺亞甲醚、多元醇與N-羥甲基(甲基)丙烯醯胺之縮合物等之多官能單體、或三丙烯醯基縮甲醛等。該等多官能單體可單獨使用或組合2種以上使用。 Examples of the polyfunctional monomer include ethylene glycol di (meth) acrylate, diethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, and propylene glycol di (meth) acrylate , Polypropylene glycol di (meth) acrylate, butanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, three Methylolpropane tri (meth) acrylate, glycerol tri (meth) acrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, pentaerythritol di (meth) acrylate Ester, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 2,2-bis (4- (form Propyl) propenyloxydiethoxyphenyl) propane, 2,2-bis (4- (meth) propenyloxy polyethoxyphenyl) propane, 2-hydroxy-3- (methyl) Acrylic acid oxypropyl (meth) acrylate, ethylene glycol diglycidyl ether di (meth) acrylate, diethylene glycol diglycidyl ether bis (methyl) ) Acrylate, diglycidyl phthalate di (meth) acrylate, glycerol triacrylate, glycerol polyglycidyl ether poly (meth) acrylate, urethane (meth) acrylate ( (I.e. toluene diisocyanate), a reaction product of trimethylhexamethylene diisocyanate and hexamethylene diisocyanate and 2-hydroxyethyl (meth) acrylate, styrene bis (meth) acrylamide, Group) polyfunctional monomers such as acrylamide methylene ether, polycondensates of polyhydric alcohols and N-methylol (meth) acrylamide, or triacrylmethyl formal. These polyfunctional monomers can be used individually or in combination of 2 or more types.

且,作為單官能單體舉例為(甲基)丙烯醯胺、羥甲基(甲基)丙烯醯胺、甲氧基甲基(甲基)丙烯醯胺、乙氧基甲基(甲基)丙烯醯胺、丙氧基甲基(甲基)丙烯醯胺、丁氧基甲氧基甲基(甲基)丙烯醯胺、N-羥甲基(甲基)丙烯醯胺、N-羥基甲基(甲基)丙烯醯胺、(甲基)丙烯酸、富馬酸、馬來酸、馬來酸酐、依康酸、依康酸酐、檸康酸、檸康酸酐、巴豆酸、2-丙烯醯胺-2-甲基丙烷磺酸、第三丁基丙烯醯胺磺酸、(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸2-苯氧基-2-羥基丙酯、2-(甲基)丙烯醯氧基-2-羥基丙基鄰苯二甲酸酯、甘油單(甲基)丙烯酸酯、(甲基)丙烯酸四氫糠酯、二甲胺基(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸2,2,2-三氟乙酯、(甲基)丙烯酸2,2,3,3-四氟丙酯、鄰苯二甲酸衍生物之半(甲基)丙烯酸酯等。該等單官能單體可單獨使用或組合2種以上使用。 Examples of the monofunctional monomer include (meth) acrylamide, hydroxymethyl (meth) acrylamide, methoxymethyl (meth) acrylamide, and ethoxymethyl (methyl) Acrylamide, propoxymethyl (meth) acrylamide, butoxymethoxymethyl (meth) acrylamide, N-hydroxymethyl (meth) acrylamide, N-hydroxymethyl (Meth) acrylamide, (meth) acrylic acid, fumaric acid, maleic acid, maleic anhydride, itaconic acid, itaconic anhydride, citraconic acid, citraconic anhydride, crotonic acid, 2-acrylic acid Amine-2-methylpropanesulfonic acid, tertiary butylacrylamidesulfonic acid, methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, (meth) acrylic acid 2 -Ethylhexyl ester, cyclohexyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, (formyl) Base) 2-phenoxy-2-hydroxypropyl acrylate, 2- (meth) acryloxy-2-hydroxypropyl phthalate, glycerol mono (meth) acrylate, (methyl ) Tetrahydrofurfuryl acrylate, dimethylamino (meth) acrylate, glycidyl (meth) acrylate , 2,2,2-trifluoroethyl (meth) acrylate, 2,2,3,3-tetrafluoropropyl (meth) acrylate, semi (meth) acrylate of phthalic acid derivatives, etc. . These monofunctional monomers can be used alone or in combination of two or more.

(2)具有乙烯性不飽和基之共聚合樹脂 (2) Copolymer resins with ethylenically unsaturated groups

具有乙烯性不飽和雙鍵之聚合性樹脂亦可使用具有乙烯性不飽和雙鍵之共聚合樹脂。如此,作為具有乙烯性不飽和雙鍵之共聚合樹脂可舉例為於例如由(甲基)丙烯酸 及(甲基)丙烯酸酯構成之丙烯酸骨架之側鏈導入乙烯性雙鍵之(甲基)丙烯酸樹脂等。 As the polymerizable resin having an ethylenically unsaturated double bond, a copolymer resin having an ethylenically unsaturated double bond can also be used. As such, copolymer resins having an ethylenically unsaturated double bond can be exemplified by, for example, (meth) acrylic acid (Meth) acrylic resins, etc., in which a side chain of an acrylic skeleton composed of (meth) acrylate and an ethylenic double bond is introduced.

作為具有乙烯性不飽和基之聚合性樹脂成分可舉例例如至少使不飽和羧酸與含環氧基之不飽和化合物共聚合而得之樹脂之羧基,與含環氧基之不飽和化合物之環氧基反應而得之樹脂,或者至少使不飽和羧酸與含環氧基之不飽和化合物共聚合而得之樹脂之環氧基,與不飽和羧酸之羧基反應而得之樹脂等。亦即,作為使不飽和羧酸與含環氧基之不飽和化合物共聚合之樹脂,可舉例為上述之具有環氧基之丙烯酸樹脂(Aac)之一形態。 Examples of the polymerizable resin component having an ethylenically unsaturated group include, for example, at least a carboxyl group of a resin obtained by copolymerizing an unsaturated carboxylic acid and an epoxy-containing unsaturated compound, and a ring of an epoxy-containing unsaturated compound. A resin obtained by reacting an oxy group, or at least an epoxy group of a resin obtained by copolymerizing an unsaturated carboxylic acid and an unsaturated compound containing an epoxy group, and a resin obtained by reacting a carboxyl group of an unsaturated carboxylic acid. That is, as a resin for copolymerizing an unsaturated carboxylic acid and an epoxy group-containing unsaturated compound, one form of the above-mentioned acrylic resin (Aac) having an epoxy group can be exemplified.

又,作為於丙烯酸樹脂骨架導入乙烯性不飽和雙鍵之方法,如上述,不限於丙烯酸樹脂骨架所具有之羧酸及經由環氧基導入乙烯性不飽和雙鍵之形態。例如可為使於側鏈具有羧酸基、羥基、胺基、醯胺基及硫醇基等之丙烯酸樹脂、與具備乙烯性不飽和雙鍵及羧酸基、羥基、胺基、醯胺基及巰醇基等之單體,藉由使例如多官能異氰酸酯或多官能環氧樹脂反應,而導入乙烯性不飽和雙鍵之構成。 In addition, as a method for introducing an ethylenically unsaturated double bond into an acrylic resin skeleton, as described above, the method is not limited to the carboxylic acid possessed by the acrylic resin skeleton and the form of introducing an ethylenically unsaturated double bond through an epoxy group. For example, an acrylic resin having a carboxylic acid group, a hydroxyl group, an amine group, a fluorenamine group, and a thiol group in a side chain, and an ethylenically unsaturated double bond and a carboxylic acid group, a hydroxyl group, an amine group, and a fluorenamine group A monomer such as a mercaptan group and a mercapto group are formed by reacting a polyfunctional isocyanate or a polyfunctional epoxy resin to introduce an ethylenically unsaturated double bond.

進而言之,導入乙烯性雙鍵之(甲基)丙烯酸樹脂可為具備乙烯性不飽和雙鍵與環氧基之(甲基)丙烯酸酯之均聚物或共聚物。 Further, the (meth) acrylic resin to which an ethylenic double bond is introduced may be a homopolymer or copolymer of a (meth) acrylic acid ester having an ethylenically unsaturated double bond and an epoxy group.

且,具有乙烯性不飽和基之聚合性樹脂成分所佔之源自含環氧基之不飽和化合物之構成單位(具有環氧基之構成單位)之比例較好為5~90質量%,更好為 15~75質量%。藉由成為上述範圍,可使接著層3較佳地硬化。 In addition, the proportion of the constituent unit (the constituent unit having an epoxy group) derived from the epoxy-containing unsaturated compound occupied by the polymerizable resin component having an ethylenically unsaturated group is preferably 5 to 90% by mass, more Good for 15 ~ 75 mass%. By setting it as the said range, the adhesive layer 3 can be hardened suitably.

具有乙烯性不飽和基之聚合性樹脂成分之重量平均分子量較好為2000~50000,更好為5000~30000。藉由設為上述範圍,可獲得接著劑組成物之較佳塗佈作業性。 The weight average molecular weight of the polymerizable resin component having an ethylenically unsaturated group is preferably 2,000 to 50,000, more preferably 5,000 to 30,000. By setting it as the said range, the favorable coating workability | operativity of an adhesive composition can be obtained.

(3.含交聯性基矽氧烷) (3. Crosslinkable group containing siloxane)

又,聚合性樹脂成分亦可為含交聯性基矽氧烷(Asi)。 The polymerizable resin component may be a crosslinkable group-containing siloxane (Asi).

本說明書中,所謂含交聯性基矽氧烷(Asi)係如下述式(Asi0)所示,表示於矽氧烷骨架之側鏈具有環氧基及乙烯基等之交聯性基之化合物。 In the present specification, the crosslinkable group-containing siloxane (Asi) is a compound having a crosslinkable group such as an epoxy group and a vinyl group on the side chain of the siloxane skeleton as shown in the following formula (Asi0). .

-(SiO3/2(R1))m-(SiO3/2(R2))n-‧‧(Asi0)(此處,R1為交聯性基,R2係選自芳基或芳香族基,m、n表示相對於上述聚矽氧烷中之全部構造單位之附有上述指數之構造單位之莫耳百分率,n+m=100%,且n>0)。 -(SiO 3/2 (R 1 )) m- (SiO 3/2 (R 2 )) n -‧‧ (Asi0) (Here, R 1 is a crosslinkable group, and R 2 is selected from aryl or Aromatic groups, m and n represent the mole percentages of the structural units with the above-mentioned indices relative to all the structural units in the above polysiloxane, n + m = 100%, and n> 0).

環氧基矽氧烷藉由光陽離子聚合起始劑或熱陽離子聚合起始劑,而使上述環氧基彼此交聯聚合,可形成聚合物。 The epoxy siloxane can be polymerized by cross-linking and polymerizing the above epoxy groups with a photocationic polymerization initiator or a thermal cationic polymerization initiator.

基於製造接著層3之耐熱性等物性優異之層合體之觀點,上述含交聯性基矽氧烷較好為以下通式(Asi1)表示之含交聯性基矽氧烷。 From the viewpoint of producing a laminate having excellent physical properties such as heat resistance of the adhesive layer 3, the crosslinkable group-containing siloxane is preferably a crosslinkable group-containing siloxane represented by the following general formula (Asi1).

Figure TW201801906AD00025
Figure TW201801906AD00025

(式中,Rc1係含有環氧基、氧雜環丁基、乙烯基、(甲基)丙烯醯基之基,Rc2係烷基或芳基,指數m及n表示相對於上述聚矽氧烷中之全部構造單位之附有上述指數之構造單位之莫耳百分率,m為50~90莫耳%,n為10~50莫耳%,但m及n之合計為100莫耳%)。 (In the formula, R c1 is a group containing an epoxy group, an oxetanyl group, a vinyl group, and a (meth) acrylfluorenyl group, and R c2 is an alkyl group or an aryl group, and the indices m and n are relative to the polysilicon Molar percentage of all structural units in the oxane with the above indexed structural units, m is 50 ~ 90 mol%, n is 10 ~ 50 mol%, but the total of m and n is 100 mol%) .

作為上述含交聯劑矽氧烷之具體例舉例為以下述式表示之聚合物E、聚合物F及信越聚矽氧股份有限公司製之商品名X-22-2046及KF-102等。 Specific examples of the crosslinking agent-containing siloxane include polymer E, polymer F represented by the following formula, and trade names X-22-2046 and KF-102 manufactured by Shin-Etsu Polysilicon Co., Ltd.

聚合物E:下述式(Asi2)表示之環氧改性矽氧烷(質量平均分子量:1000~20000) Polymer E: epoxy-modified siloxane represented by the following formula (Asi2) (mass average molecular weight: 1000 to 20,000)

Figure TW201801906AD00026
Figure TW201801906AD00026

(式(Asi2)中,指數m1及n1表示相對於聚合物E中之全部構造單位之附有上述指數之構造單位之莫耳百分率,m1=50~90莫耳%,n1=10~50莫耳%,但m1及n1之合計為100莫耳%)。 (In formula (Asi2), the indices m1 and n1 represent the mole percentage of the structural unit with the above index relative to all the structural units in the polymer E, m1 = 50 ~ 90 mole%, n1 = 10 ~ 50 mole Ear%, but the total of m1 and n1 is 100 mole%).

聚合物F:下述式(Asi3)表示之環氧改性矽氧烷 (質量平均分子量:1000~20000) Polymer F: epoxy-modified siloxane represented by the following formula (Asi3) (Mass average molecular weight: 1000 ~ 20000)

Figure TW201801906AD00027
Figure TW201801906AD00027

(式(Asi3)中,指數m2、n2及n3表示相對於聚合物F中之全部構造單位之附有上述指數之構造單位之莫耳百分率,m2=50~90莫耳%,n2=1~10莫耳%,n3=5~50莫耳%,但m2、n2及n3之合計為100莫耳%)。 (In formula (Asi3), the indices m2, n2, and n3 represent the mole percentages of the structural units with the above indices relative to all the structural units in the polymer F, m2 = 50 ~ 90 mole%, n2 = 1 ~ 10 mole%, n3 = 5 ~ 50 mole%, but the total of m2, n2 and n3 is 100 mole%).

[聚合起始劑] [Polymerization initiator]

聚合起始劑只要可使上述聚合性樹脂成分硬化者即可。作為聚合起始劑舉例為熱聚合起始劑及光聚合起始劑,無關於所製造之層合體之構成,基於可使接著層3較好地硬化之觀點,較好為熱聚合起始劑。 The polymerization initiator may be any one that can harden the polymerizable resin component. Examples of the polymerization initiator are a thermal polymerization initiator and a photopolymerization initiator. Regardless of the composition of the manufactured laminate, a thermal polymerization initiator is preferred from the viewpoint that the adhesive layer 3 can be hardened well. .

作為熱聚合起始劑可舉例熱陽離子聚合起始劑及熱自由基聚合起始劑。且,作為光聚合起始劑可舉例為光陽離子聚合起始劑及光自由基聚合起始劑。以下針對熱陽離子聚合起始劑、熱自由基聚合起始劑、光陽離子聚合起始劑及光自由基聚合起始劑詳細說明。 Examples of the thermal polymerization initiator include a thermal cationic polymerization initiator and a thermal radical polymerization initiator. In addition, examples of the photopolymerization initiator include a photocationic polymerization initiator and a photoradical polymerization initiator. The thermal cationic polymerization initiator, thermal radical polymerization initiator, photocationic polymerization initiator, and photoradical polymerization initiator are described in detail below.

(1)熱陽離子聚合起始劑 (1) Thermal cationic polymerization initiator

接著劑組成物含有熱陽離子聚合起始劑作為聚合起始 劑。又,如此,熱陽離子聚合起始劑中,藉由熱而產生酸之聚合起始劑有時亦稱為熱酸產生劑。接著劑組成物於熱硬化處理時,藉由因熱產生之陽離子之作用,可促進聚合性基之聚合。以下針對可作為熱陽離子聚合起始劑使用之化合物詳細說明。 The adhesive composition contains a thermal cationic polymerization initiator as a polymerization initiation Agent. In addition, among the thermal cationic polymerization initiators, a polymerization initiator that generates an acid by heat is sometimes referred to as a thermal acid generator. When the adhesive composition is subjected to heat curing treatment, the polymerization of polymerizable groups can be promoted by the action of cations generated by heat. The compounds which can be used as a thermal cationic polymerization initiator are described in detail below.

(陽離子) (cation)

熱陽離子聚合起始劑可舉例為具有以下通式(h01)或(h02)所示之陽離子部之化合物。 Examples of the thermal cationic polymerization initiator include compounds having a cationic moiety represented by the following general formula (h01) or (h02).

Figure TW201801906AD00028
Figure TW201801906AD00028

(上述式(h01)中,Rh01~Rh04分別獨立為選自氫、碳數1~20之烷基及芳基所成之群中之有機基,上述芳基亦可具有取代基,Rh01~Rh04內之至少1者為芳基)。 (In the above formula (h01), R h01 to R h04 are each independently an organic group selected from the group consisting of hydrogen, an alkyl group having 1 to 20 carbon atoms, and an aryl group. The aryl group may also have a substituent, R at least one of h01 to R h04 is an aryl group).

Figure TW201801906AD00029
Figure TW201801906AD00029

(上述式(h02)中,Rh05~Rh07分別獨立為選自碳數1~20之烷基及芳基所成之群中之有機基,上述芳基亦可具有取代基,Rh05~Rh07內之至少1者為芳基)。 (In the above formula (h02), R h05 to R h07 are each independently an organic group selected from the group consisting of an alkyl group and an aryl group having 1 to 20 carbon atoms. The above aryl group may also have a substituent, R h05 to At least one of R h07 is aryl).

此處,Rh01~Rh07為芳基時,該芳基較好為以下通式(hr-1)所示之苯基。 When R h01 to R h07 are aryl groups, the aryl group is preferably a phenyl group represented by the following general formula (hr-1).

Figure TW201801906AD00030
Figure TW201801906AD00030

(上述式hr-1中,Rhc01可為氫、羥基、碳數1~10之烷基,該碳數1~10之烷基可經由醚鍵或酯鍵鍵結於(hr-1)之苯基。又,Rh01~Rh07中之hr-1可分別獨立為不同之取代基)。 (In the above formula hr-1, R hc01 may be hydrogen, a hydroxyl group, and an alkyl group having 1 to 10 carbon atoms. The alkyl group having 1 to 10 carbon atoms may be bonded to (hr-1) via an ether bond or an ester bond. Phenyl. In addition, hr-1 in R h01 to R h07 may be a different substituent independently).

作為通式(h01)所示之陽離子部之較佳形態可舉例為以下之陽離子部。 As a preferable aspect of a cation part represented by General formula (h01), the following cation part is mentioned.

Figure TW201801906AD00031
Figure TW201801906AD00031

又,作為通式(h02)所示之陽離子部之較佳 形態可舉例為以下之陽離子部。如此,具有陽離子部之芳香族鎓鹽由於在室溫之安定性優異,藉由熱而產生酸,故可較好地使用作為熱酸產生劑。 Moreover, as a cation part represented by general formula (h02), it is preferable Examples of the form include the following cationic moiety. In this way, the aromatic onium salt having a cationic moiety is excellent in stability at room temperature and generates an acid by heat, so it can be suitably used as a thermal acid generator.

且,作為通式(h02)所示之陽離子部之較佳形態可舉例為以下之陽離子部。 In addition, as a preferable form of the cation part represented by General formula (h02), the following cation part can be illustrated.

Figure TW201801906AD00032
Figure TW201801906AD00032

(陰離子部) (Anion part)

作為熱陽離子聚合起始劑之陰離子部可舉例為例如六氟化磷酸陰離子、三氟甲烷磺酸陰離子、全氟丁烷磺酸陰離子、四(五氟苯基)硼酸陰離子等。 Examples of the anion portion as a thermal cationic polymerization initiator include, for example, a hexafluoride phosphate anion, a trifluoromethanesulfonic acid anion, a perfluorobutanesulfonic acid anion, a tetrakis (pentafluorophenyl) borate anion, and the like.

可作為市售品獲得之熱陽離子聚合起始劑舉例為例如SANAID SI-45、SI-47、SI-60、SI-60L、SI-80、SI-80L、SI-100、SI-100L、SI-110、SI-110L、SI-145、I- 150、SI-160、SI-180、SI-B3、SI-B2A、SI-B3A、SI-B4、SI-300(三新化學工業(股)製)等。此外,亦舉例為CI-2921、CI-2920、CI-2946、CI-3128、CI-2624、CI-2639、CI-2064(日本曹達(股)製)、CP-66、CP-77(ADEKA(股)製)、FC-520(3M公司製)K-PURE、TAG-2396、TAG-2713S、TAG-2713、TAG-2172、TAG-2179、TAG-2168E、TAG-2722、TAG-2507、TAG-2678、TAG-2681、TAG-2679、TAG-2689、TAG-2690、TAG-2700、TAG-2710、TAG-2100(KING INDUSTRY公司製)、CDX-3027、CXC-1615、CXC-1616、CXC-1750、CXC-1738、CXC-1614、CXC-1742、CXC-1743、CXC-1613、CXC-1739、CXC-1751、CXC-1766、CXC-1763、CXC-1736、CXC-1756、CXC-1821、CXC-1802-60(楠本化成股份有限公司製)等。上述中,較好為三氟甲烷磺酸鹽或六氟化磷酸鹽,更好為三氟甲烷磺酸鹽。 Examples of thermal cationic polymerization initiators available as commercial products are, for example, SANAID SI-45, SI-47, SI-60, SI-60L, SI-80, SI-80L, SI-100, SI-100L, SI -110, SI-110L, SI-145, I- 150, SI-160, SI-180, SI-B3, SI-B2A, SI-B3A, SI-B4, SI-300 (Sanxin Chemical Industry Co., Ltd.) and so on. In addition, examples are CI-2921, CI-2920, CI-2946, CI-3128, CI-2624, CI-2639, CI-2064 (made by Japan Soda Co., Ltd.), CP-66, CP-77 (ADEKA (Stock system), FC-520 (3M company) K-PURE, TAG-2396, TAG-2713S, TAG-2713, TAG-2172, TAG-2179, TAG-2168E, TAG-2722, TAG-2507, TAG-2678, TAG-2681, TAG-2679, TAG-2689, TAG-2690, TAG-2700, TAG-2710, TAG-2100 (made by KING Industry), CDX-3027, CXC-1615, CXC-1616, CXC-1750, CXC-1738, CXC-1614, CXC-1742, CXC-1743, CXC-1613, CXC-1739, CXC-1751, CXC-1766, CXC-1763, CXC-1736, CXC-1756, CXC- 1821, CXC-1802-60 (made by Nanben Chemical Co., Ltd.), etc. Among the above, trifluoromethanesulfonate or hexafluorophosphate is preferred, and trifluoromethanesulfonate is more preferred.

用以於熱陽離子聚合起始劑中產生酸之溫度,較好為接著層3之可貼附區域以上之溫度區域,具體而言較好為110℃以上,更好為130℃以上。 The temperature for generating an acid in the thermal cationic polymerization initiator is preferably a temperature region above the attachable region of the adhesive layer 3, specifically preferably 110 ° C or higher, more preferably 130 ° C or higher.

熱陽離子聚合起始劑之調配輛,相對於接著劑組成物之總固形分,較好為0.01重量%以上、20重量%以下,更好為0.1重量%以上、10重量%以下,最好為0.5重量%以上、5重量%以下。熱酸產生劑之調配量若為0.1重量%以上,則藉由使聚合性樹脂成分較好地聚合,而可形成於250℃以上之動態黏度及25℃下之楊氏模數較高之接 著層。 The formulation of the thermal cationic polymerization initiator is preferably 0.01% by weight or more and 20% by weight or less, more preferably 0.1% by weight or more and 10% by weight or less, and more preferably the total solid content of the adhesive composition. 0.5% by weight or more and 5% by weight or less. If the blending amount of the thermal acid generator is 0.1% by weight or more, the polymerizable resin component can be polymerized well, and a dynamic viscosity at 250 ° C or higher and a Young's modulus at 25 ° C can be formed. Landing layer.

(2)熱自由基聚合起始劑 (2) Thermal radical polymerization initiator

作為熱自由基聚合起始劑舉例為例如過氧化物及偶氮系聚合起始劑。該等熱自由基聚合起始劑藉由加熱而產生之自由基,使聚合性單體聚合。 Examples of the thermal radical polymerization initiator include a peroxide and an azo-based polymerization initiator. These thermal radical polymerization initiators polymerize a polymerizable monomer by a radical generated by heating.

作為過氧化物舉例為例如酮過氧化物、過氧縮醛、過氧化氫、二烷基過氧化物、過氧酯、過氧碳酸酯及過氧縮醛。具體而言舉例為過氧化乙醯、過氧化異丙苯、過氧化第三丁基、過氧化第三丁基戊基、過氧化丙醯、過氧化苯甲醯(BPO)、過氧化2-氯苯甲醯、過氧化3-氯苯甲醯、過氧化4-氯苯甲醯、過氧化2,4-二氯苯甲醯、過氧化4-溴苯甲醯、過氧化月桂醯、過硫酸鉀、過氧碳酸二異丙酯、四氫萘過氧化物、1-苯基-2-甲基丙-1-過氧化氫、過三苯基乙酸第三丁酯、第三丁基過氧化氫、過甲酸第三丁酯、過乙酸第三丁酯、過苯甲酸第三丁酯、過苯基乙酸第三丁酯、過4-甲氧基乙酸第三丁酯及過N-(3-甲苯醯基)胺基甲酸第三丁酯、二異丙苯過氧化物、第三丁基過氧-2-乙基己基單碳酸酯、二(4-第三丁基環己基)過氧二碳酸酯、2,5-二甲基-2,5-二(第三丁基過氧基)己烷及1,1-二(第三丁基過氧基)環己烷等。 Examples of the peroxide include ketone peroxide, peroxyacetal, hydrogen peroxide, dialkyl peroxide, peroxyester, peroxycarbonate, and peroxyacetal. Specific examples are acetamidine peroxide, cumene peroxide, third butyl peroxide, third butylpentyl peroxide, propylammonium peroxide, benzoylperoxide (BPO), 2-peroxide Chlorobenzidine, 3-chlorobenzyl peroxide, 4-chlorobenzyl peroxide, 2,4-dichlorobenzyl peroxide, 4-bromobenzyl peroxide, lauryl peroxide, Potassium sulfate, diisopropyl peroxycarbonate, tetrahydronaphthalene peroxide, 1-phenyl-2-methylpropane-1-hydrogen peroxide, third butyl pertriphenylacetate, third butyl peroxy Hydrogen oxide, tert-butyl performate, tert-butyl peracetate, tert-butyl perbenzoate, tert-butyl perphenylacetate, tert-butyl permethoxy 4-methoxyacetate and per-N- ( 3-tolyl) carbamic acid tert-butyl ester, dicumyl peroxide, tert-butylperoxy-2-ethylhexyl monocarbonate, bis (4-tert-butylcyclohexyl) peroxide Oxydicarbonate, 2,5-dimethyl-2,5-di (third butylperoxy) hexane, 1,1-bis (third butylperoxy) cyclohexane, and the like.

作為市售之過氧化物舉例為例如日本油脂股份有限公司製之商品名「PERCUMYL(註冊商標)」、商品名「PERBUTYL(註冊商標)」、商品名「PEROCTA (註冊商標)」、商品名「PEROYL(註冊商標)」及商品名「PERHEXA(註冊商標)」等。 Examples of commercially available peroxides are, for example, the trade name "PERCUMYL (registered trademark)", the trade name "PERBUTYL (registered trademark)", and the trade name "PEROCTA" (Registered trademark) ", trade name" PEROYL (registered trademark) ", and trade name" PERHEXA (registered trademark) ".

作為偶氮系聚合起始劑舉例為例如2,2’-偶氮雙丙烷、2,2’-二氯-2,2’-偶氮雙丙烷、1,1’-偶氮(甲基乙基)二乙酸酯、2,2’-偶氮雙(2-脒基丙烷)鹽酸鹽、2,2’-偶氮雙(2-胺基丙烷)硝酸鹽、2,2’-偶氮雙異丁烷、2,2’-偶氮雙異丁基醯胺、2,2’-偶氮雙異丁腈、2,2’-偶氮雙-2-甲基丙酸甲酯、2,2’-二氯-2,2’-偶氮雙丁烷、2,2’-偶氮雙-2-甲基丁腈、2,2’-偶氮雙異丁酸二甲酯、1,1’-偶氮雙(1-甲基丁腈-3-磺酸鈉)、2-(4-甲基苯基偶氮)-2-甲基丙二腈、4,4’-偶氮雙-4-氰基戊酸、3,5-二羥基甲基苯基偶氮-2-烯丙基丙二腈、2,2’-偶氮雙-2-甲基戊腈、4,4’-偶氮雙-4-氰基戊酸二甲酯、2,2’-偶氮雙-2,4-二甲基戊腈、1,1’-偶氮雙環己腈、2,2’-偶氮雙-2-丙基丁腈、1,1’-偶氮雙環己腈、2,2’-偶氮雙-2-丙基丁腈、1,1’-偶氮雙-1-氯苯基乙烷、1,1’-偶氮雙-1-環己烷甲腈、1,1’-偶氮雙-1-環庚腈、1,1’-偶氮雙-1-苯基乙烷、1,1’-偶氮雙異丙苯、4-硝基苯基偶氮苄基氰基乙酸乙酯、苯基偶氮二苯基甲烷、苯基偶氮三苯基甲烷、4-硝基苯基偶氮三苯基甲烷、1,1’-偶氮雙-1,2-二苯基乙烷、聚(雙酚A-4,4’-偶氮雙-4-氰基戊酸酯)及聚(四乙二醇-2,2’-偶氮雙異丁酸酯)等。 Examples of the azo-based polymerization initiator include 2,2'-azobispropane, 2,2'-dichloro-2,2'-azobispropane, 1,1'-azo (methylethyl ) Diacetate, 2,2'-azobis (2-amidinopropane) hydrochloride, 2,2'-azobis (2-aminopropane) nitrate, 2,2'-azo Azobisisobutane, 2,2'-azobisisobutylammonium amine, 2,2'-azobisisobutyronitrile, 2,2'-azobis-2-methylpropanoic acid methyl ester, 2,2'-dichloro-2,2'-azobisbutane, 2,2'-azobis-2-methylbutyronitrile, 2,2'-azobisisobutyric acid dimethyl ester, 1,1'-azobis (1-methylbutyronitrile-3-sulfonate), 2- (4-methylphenylazo) -2-methylmalononitrile, 4,4'- Azobis-4-cyanovaleric acid, 3,5-dihydroxymethylphenylazo-2-allylmalononitrile, 2,2'-azobis-2-methylvaleronitrile, 4, 4'-Azobis-4-cyanovaleric acid dimethyl ester, 2,2'-azobis-2,4-dimethylvaleronitrile, 1,1'-azobiscyclohexanonitrile, 2,2 '-Azobis-2-propylbutyronitrile, 1,1'-azobiscyclohexanitrile, 2,2'-azobis-2-propylbutyronitrile, 1,1'-azobis-1 -Chlorophenylethane, 1,1'-azobis-1-cyclohexanecarbonitrile, 1,1'-azobis-1-cycloheptane , 1,1'-azobis-1-phenylethane, 1,1'-azobiscumene, 4-nitrophenylazobenzylcyanoacetate, phenylazobis Phenylmethane, phenylazotriphenylmethane, 4-nitrophenylazotriphenylmethane, 1,1'-azobis-1,2-diphenylethane, poly (bisphenol A -4,4'-azobis-4-cyanovalerate) and poly (tetraethylene glycol-2,2'-azobisisobutyrate).

熱自由基聚合起始劑之調配量,相對於100重量份之聚合性單體,較好為0.1重量份以上、20重量份以下,更好為1重量份以上、5重量份以下。藉此,可較好地 使具有乙烯性不飽和雙鍵之聚合性樹脂成分聚合,可形成於250℃以上之動態黏度及25℃下之楊氏模數較高之接著層。又,熱自由基聚合起始劑宜在正要使用接著劑組成物之前,藉由習知方法調配於接著劑組成物中。又,熱自由基聚合起始劑亦可以後述添加溶劑稀釋後,調配於接著劑組成物中。 The blending amount of the thermal radical polymerization initiator is preferably 0.1 part by weight or more and 20 parts by weight or less, more preferably 1 part by weight or more and 5 parts by weight or less based on 100 parts by weight of the polymerizable monomer. With this, you can better By polymerizing a polymerizable resin component having an ethylenically unsaturated double bond, it is possible to form an adhesive layer having a dynamic viscosity above 250 ° C and a high Young's modulus at 25 ° C. The thermal radical polymerization initiator is preferably formulated in the adhesive composition by a conventional method immediately before the adhesive composition is used. The thermal radical polymerization initiator may be added to the adhesive composition after dilution with a solvent as described below.

熱自由基聚合起始劑之1分鐘半衰減溫度較好為90℃以上、200℃以下,更好120℃以上、180℃以下。 The 1-minute half-decay temperature of the thermal radical polymerization initiator is preferably 90 ° C or higher and 200 ° C or lower, more preferably 120 ° C or higher and 180 ° C or lower.

且,熱自由基聚合起始劑之1小時半衰減溫度較好為50℃以上、140℃以下,更好80℃以上、140℃以下。 The one-and-a-half hour decay temperature of the thermal radical polymerization initiator is preferably 50 ° C or higher and 140 ° C or lower, more preferably 80 ° C or higher and 140 ° C or lower.

藉由使熱自由基聚合起始劑之1分鐘半衰減溫度較好為90℃以上、200℃以下,1小時半衰減溫度較好為50℃以上、140℃以下,可使自調配熱自由基聚合起始劑後起,至使具有乙烯性不飽和雙鍵之聚合性樹脂成分聚合,到凝膠化之時間拉長。藉此,可使將接著劑組成物塗佈於支撐板2上時之可作業時間拉長。且,藉由使熱自由基聚合起始劑之1分鐘半衰減溫度較好為90℃以上、200℃以下,1小時半衰減溫度較好為50℃以上、140℃以下,於支撐板2上塗佈接著劑組成物,可將藉由加熱而去除稀釋溶劑時之溫度條件設定為較高。又,基於可拉長可作業時間之觀點,較好高於熱自由基聚合起始劑之1分鐘半衰減溫度及1小時半衰減溫度。又,基於快速凝膠化之觀點,較好低於熱自由基聚合起始劑之1分鐘半衰減溫度及1小時 半衰減溫度。 By making the 1-minute half-decay temperature of the thermal radical polymerization initiator preferably 90 ° C or higher and 200 ° C or lower, and the 1-hour half-decay temperature preferably 50 ° C or higher and 140 ° C or lower, self-adjusting thermal radicals can be achieved. The time from the polymerization initiator to the time when the polymerizable resin component having an ethylenically unsaturated double bond is polymerized and the gelation time is extended. Thereby, the workable time when the adhesive composition is applied to the support plate 2 can be lengthened. Moreover, the one-minute half-decay temperature of the thermal radical polymerization initiator is preferably 90 ° C. or higher and 200 ° C. or lower, and the one-hour half-decay temperature is preferably 50 ° C. or higher and 140 ° C. or lower on the support plate 2. When applying the adhesive composition, it is possible to set a higher temperature condition when the diluent solvent is removed by heating. From the viewpoint of extending the workable time, it is preferably higher than the one-and-a-half-minute decay temperature and the one-and-a-half hour decay temperature of the thermal radical polymerization initiator. From the viewpoint of rapid gelation, it is preferably lower than the 1 minute and a half decay temperature and 1 hour of the thermal radical polymerization initiator. Half decay temperature.

又,熱自由基聚合起始劑之理論活性氧量較好為3.0%以上、13.0%以下,宜對應於理論活性氧量,調整熱自由基聚合起始劑之調配量。 In addition, the theoretical active oxygen amount of the thermal radical polymerization initiator is preferably 3.0% or more and 13.0% or less, and it is appropriate to adjust the blending amount of the thermal radical polymerization initiator according to the theoretical active oxygen amount.

(3)光陽離子聚合起始劑 (3) Photocationic polymerization initiator

本發明之光陽離子聚合起始劑宜使用選自由下述通式(b0-1)表示之化合物及下述通式(b0-2)表示之化合物所成之群中之1種以上之陽離子聚合起始劑(B0)(以下稱為「(B0)成分」)。 The photocationic polymerization initiator of the present invention is preferably one or more types of cationic polymerization selected from the group consisting of a compound represented by the following general formula (b0-1) and a compound represented by the following general formula (b0-2). Starter (B0) (hereinafter referred to as "(B0) component").

Figure TW201801906AD00033
Figure TW201801906AD00033

(式中,Rb01~Rb04分別獨立為氟原子、或可具有取代基之芳基,Rb05為氟原子、或可具有取代基之氟化烷基,複數的Rb05可相同,亦可分別不同,q為1以上之整數,Qq+分別獨立為q價有機陽離子)。 (In the formula, R b01 to R b04 are each independently a fluorine atom or an aryl group which may have a substituent. R b05 is a fluorine atom or a fluorinated alkyl group which may have a substituent. The plural R b05 may be the same or different. They are different, q is an integer of 1 or more, and Q q + is independently a q-valent organic cation).

[(B0)成分] [(B0) ingredients]

(B0)成分係選自由上述通式(b0-1)表示之化合物及上述通式(b0-2)表示之化合物所成之群中之1種以上 之陽離子聚合起始劑。該等2種化合物藉由曝光而產生較強之酸。因此,具有(B0)成分之接著劑組成物可較好地藉由曝光使具有環氧基之聚合性樹脂成分硬化。 (B0) the component is one or more selected from the group consisting of a compound represented by the general formula (b0-1) and a compound represented by the general formula (b0-2) The cationic polymerization initiator. These two compounds generate stronger acids by exposure. Therefore, the adhesive composition having the (B0) component can harden the polymerizable resin component having an epoxy group by exposure.

式(b0-1)中,Rb01~Rb04分別獨立為氟原子、或可具有取代基之芳基。Rb01~Rb04之可具有取代基之芳基較好碳數為5~30,更好為5~20,又更好為6~15,特佳為6~12。具體而言,舉例為萘基、苯基、蒽基等,基於容易取得之觀點,較好為苯基。芳基可具有取代基。作為取代基並未特別限定,但較好為鹵原子、羥基、烴基(較好為直鏈狀或分支鏈狀之烷基,較好碳數為1~5),更好為鹵原子或碳數1~5之鹵化烷基,特佳為氟原子或碳數1~5之氟化烷基。藉由使芳基具有氟原子,而使陰離子部之極性提高故而較佳。其中作為式(b0-1)中之Rb01~Rb04,較好為經氟化之苯基,特佳為全氟苯基。 In the formula (b0-1), R b01 to R b04 are each independently a fluorine atom or an aryl group which may have a substituent. The aryl group which may have a substituent in R b01 to R b04 is preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and particularly preferably 6 to 12. Specifically, examples include naphthyl, phenyl, and anthracenyl. From the viewpoint of availability, phenyl is preferred. An aryl group may have a substituent. The substituent is not particularly limited, but is preferably a halogen atom, a hydroxyl group, or a hydrocarbon group (preferably a linear or branched alkyl group, preferably 1 to 5 carbon atoms), and more preferably a halogen atom or carbon. The halogenated alkyl group having 1 to 5 is particularly preferably a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms. It is preferable that the aryl group has a fluorine atom and the polarity of the anion portion is increased. Among them, as R b01 to R b04 in formula (b0-1), a fluorinated phenyl group is preferred, and a perfluorophenyl group is particularly preferred.

作為式(b0-1)表示之化合物之陰離子部之較佳具體例,舉例為四(五氟苯基)硼酸根([B(C6F5)4]-);四[(三氟甲基)苯基]硼酸根([B(C6H4CF3)4]-);二氟雙(五氟苯基)硼酸根([(C6F5)2BF2]-);三氟(五氟苯基)硼酸根([(C6F5)BF3]-);四(二氟苯基)硼酸根([B(C6H3F2)4]-)等。其中,特佳為四(五氟苯基)硼酸根([B(C6F5)4]-)。 As a preferable specific example of the anion part of the compound represented by the formula (b0-1), tetra (pentafluorophenyl) borate ([B (C 6 F 5 ) 4 ] - ); tetra [(trifluoromethyl) Phenyl) phenyl] borate ([B (C 6 H 4 CF 3 ) 4 ] - ); difluorobis (pentafluorophenyl) borate ([(C 6 F 5 ) 2 BF 2 ] - ); three Fluoro (pentafluorophenyl) borate ([(C 6 F 5 ) BF 3 ] - ); Tetrakis (difluorophenyl) borate ([B (C 6 H 3 F 2 ) 4 ] - ) and the like. Among them, particularly preferred is tetrakis (pentafluorophenyl) borate ([B (C 6 F 5 ) 4 ] - ).

式(b0-2)中,Rb05為氟原子、或可具有取代基之氟化烷基,複數的Rb05可相同,亦可分別不同。 In Formula (b0-2), R b05 is a fluorine atom or a fluorinated alkyl group may have a substituent group, the plurality of R b05 may be the same or different from each other.

Rb05之可具有取代基之氟化烷基較好碳數為 1~10,更好為1~8,又更好為1~5。具體而言,舉例為上述Ra22、Ra23之說明中上述之碳數1~5之烷基中,氫原子之一部分或全部經氟原子取代之基。其中作為Rb05,較好為氟原子或碳數1~5之氟化烷基,更好為氟原子或碳數1~5之全氟烷基,又更好為氟原子、三氟甲基或五氟乙基。 The carbon number of the fluorinated alkyl group which may have a substituent in R b05 is preferably 1 to 10, more preferably 1 to 8, and still more preferably 1 to 5. Specifically, for example, in the above description of R a22 and R a23 , in the alkyl group having 1 to 5 carbon atoms, a part or all of hydrogen atoms are substituted with fluorine atoms. Among them, R b05 is preferably a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms, more preferably a fluorine atom or a perfluoroalkyl group having 1 to 5 carbon atoms, and more preferably a fluorine atom or a trifluoromethyl group. Or pentafluoroethyl.

式(b0-2)表示之化合物之陰離子部較好為下述通式(b0-2a)表示者。 The anion part of the compound represented by formula (b0-2) is preferably one represented by the following general formula (b0-2a).

Figure TW201801906AD00034
Figure TW201801906AD00034

(式中,Rbf05為可具有取代基之氟化烷基,nb1為1~5之整數)。 (In the formula, R bf05 is a fluorinated alkyl group which may have a substituent, and n b1 is an integer of 1 to 5).

式(b0-2a)中,作為Rbf05之可具有取代基之氟化烷基,為與上述Rb05中舉例之可具有取代基之氟化烷基相同。式(b0-2a)中,nb1較好為1~4,更好為2~4,最好為3。 In the formula (b0-2a), the fluorinated alkyl group which may have a substituent as R bf05 is the same as the fluorinated alkyl group which may have a substituent as exemplified in the above R b05 . In formula (b0-2a), n b1 is preferably 1 to 4, more preferably 2 to 4, and most preferably 3.

式(b0-1)~(b0-2)中,q為1以上之整數,Qq+為q價有機陽離子,較好舉例為鋶陽離子、錪陽離子,特佳為下述之通式(ca-1)~(ca-5)分別表示之有機陽離子。 In the formulae (b0-1) to (b0-2), q is an integer of 1 or more, and Q q + is a q-valent organic cation. Preferable examples include a sulfonium cation and a sulfonium cation. Particularly preferred is the following general formula (ca- 1) Organic cations represented by (ca-5).

Figure TW201801906AD00035
Figure TW201801906AD00035

(式中,R201~R207及R211~R212分別獨立表示可具有取代基之芳基、雜芳基、烷基或烯基,R201~R203、R206~R207、R211~R212可相互鍵結與式中之硫原子一起形成環,R208~R209分別獨立表示氫原子或碳數1~5之烷基,R210表示可具有取代基之芳基、可具有取代基之烷基、可具有取代基之烯基或可具有取代基之含-SO2-之環式基,L201為-C(=O)-或C(=O)-O-,Y201分別獨立表示伸芳基、伸烷基或伸烯基,x為1或2,W201表示(x+1)價之連結基)。 (Wherein, R 201 ~ R 207 and R 211 ~ R 212 each independently represents a substituent group of the aryl group having, heteroaryl, alkyl or alkenyl group, R 201 ~ R 203, R 206 ~ R 207, R 211 ~ R 212 can be bonded to each other to form a ring with the sulfur atom in the formula, R 208 to R 209 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and R 210 represents an aryl group which may have a substituent, which may have An alkyl group of a substituent, an alkenyl group which may have a substituent, or a cyclic group containing -SO 2 -which may have a substituent, L 201 is -C (= O)-or C (= O) -O-, Y 201 each independently represents an arylene group, an alkylene group or an alkenyl group, x is 1 or 2, and W 201 represents a (x + 1) -valent linking group).

作為R201~R207及R211~R212之芳基,舉例為碳數6~20之無取代芳基,較好為苯基、萘基。作為R201~R207及R211~R212之雜芳基,舉例為構成上述芳基之碳原子一部分經雜原子取代者。作為雜原子舉例為氧原子、硫原子、氮原子等。作為該雜芳基,舉例為自9H-氧雜蒽去除1個氫原子之基;作為取代雜芳基,舉例為自9H-氧雜蒽-9-酮去除1個氫原子之基。作為R201~R207及R211~R212之烷基,舉例 為鏈狀或環狀之烷基,較好為碳數1~30者。作為R201~R207及R211~R212之烯基,較好為碳數2~10。作為R201~R207及R211~R212可具有之取代基,舉例為例如烷基、鹵原子、鹵化烷基、羰基、氰基、胺基、氧代基(=O)、芳基、下述式(ca-r-1)~(ca-r-10)分別表示之基。 Examples of the aryl group of R 201 to R 207 and R 211 to R 212 include an unsubstituted aryl group having 6 to 20 carbon atoms, and a phenyl group and a naphthyl group are preferred. Examples of the heteroaryl group of R 201 to R 207 and R 211 to R 212 include those in which a part of carbon atoms constituting the above aryl group is substituted with a hetero atom. Examples of the hetero atom include an oxygen atom, a sulfur atom, and a nitrogen atom. Examples of the heteroaryl group include a group in which one hydrogen atom is removed from 9H-oxanthracene; and examples of the substituted heteroaryl group include a group in which one hydrogen atom is removed from 9H-oxanthracene-9-one. Examples of the alkyl group of R 201 to R 207 and R 211 to R 212 include a linear or cyclic alkyl group, and a carbon number of 1 to 30 is preferred. The alkenyl group of R 201 to R 207 and R 211 to R 212 is preferably 2 to 10 carbon atoms. Examples of the substituents that R 201 to R 207 and R 211 to R 212 may have include, for example, an alkyl group, a halogen atom, a halogenated alkyl group, a carbonyl group, a cyano group, an amine group, an oxo group (= O), an aryl group, The groups represented by the following formulae (ca-r-1) to (ca-r-10), respectively.

Figure TW201801906AD00036
Figure TW201801906AD00036

(式中,R’201分別獨立為氫原子、可具有取代基之環式基、可具有取代基之鏈狀烷基、或可具有取代基之鏈狀烯基)。 (In the formula, R'201 is each independently a hydrogen atom, a cyclic group which may have a substituent, a chain alkyl group which may have a substituent, or an alkenyl group which may have a substituent.)

R’201為可具有取代基之環式基、可具有取代基之鏈狀烷基、或可具有取代基之鏈狀烯基。 R'201 is a cyclic group which may have a substituent, a linear alkyl group which may have a substituent, or an alkenyl group which may have a substituent.

可具有取代基之環式基: Cyclic radicals which may have substituents:

該環狀基較好為環狀烴基,該環狀烴基可為芳香族烴基,亦可為脂肪族烴基。脂肪族烴基意指不具有芳香族性之烴基。且脂肪族烴基可為飽和,亦可為不飽和,通常較好為飽和。 The cyclic group is preferably a cyclic hydrocarbon group, and the cyclic hydrocarbon group may be an aromatic hydrocarbon group or an aliphatic hydrocarbon group. The aliphatic hydrocarbon group means a hydrocarbon group having no aromaticity. In addition, the aliphatic hydrocarbon group may be saturated or unsaturated, and is usually preferably saturated.

R’201中之芳香族烴基為具有芳香環之烴基。該芳香族烴基之碳數較好為3~30,更好為5~30,又更好為5~20,特佳為6~15,最好為6~10。惟,該碳數不含取代基中之碳數。R’201中之芳香族烴基具有之芳香環具體而言舉例為苯、茀、萘、蒽、菲、聯苯、或構成該等之芳香環的碳原子之一部分經雜原子取代之芳香族雜環,或構成該等之芳香環或芳香族雜環的氫原子之一部分經氧代基等取代之環。作為芳香族雜環中之雜原子舉例為氧原子、硫原子、氮原子等。作為R’201中之芳香族烴基具體而言,舉例為自上述芳香環去除1個氫原子之基(芳基;例如苯基、萘基、蒽基等)、自上述芳香環之氫原子之1經伸烷基取代之基(例如苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳基烷基等)、自構成上述芳香環之氫原子之一部分經氧代基等取代之環(例如蒽醌等)去除1個氫原子之基、自芳香族雜環(例如9H-硫雜蒽、9H-硫雜蒽-9-酮等)去除1個氫原子之基等。上述伸烷基(芳基烷基中之烷基鏈)之碳數較好為1~4,更好為1~2,特佳為1。 R '201 in the aromatic hydrocarbon group having an aromatic hydrocarbon rings. The carbon number of the aromatic hydrocarbon group is preferably from 3 to 30, more preferably from 5 to 30, still more preferably from 5 to 20, particularly preferably from 6 to 15, and most preferably from 6 to 10. However, the carbon number does not include the carbon number in the substituent. R '201 in the aromatic ring of the aromatic hydrocarbon group having specifically exemplified benzene, fluorene, naphthalene, anthracene, phenanthrene, biphenyl, substituted or forming part of an aromatic ring carbon atoms of such heteroatom-aromatic heterocyclic A ring or a ring in which a part of hydrogen atoms constituting such an aromatic ring or an aromatic heterocyclic ring is substituted with an oxo group or the like. Examples of the hetero atom in the aromatic heterocyclic ring include an oxygen atom, a sulfur atom, and a nitrogen atom. As R '201 in particular of aromatic hydrocarbon, for example for the removal from said group one aromatic ring hydrogen atoms (an aryl group; for example phenyl, naphthyl, anthryl, etc.), from said hydrogen atoms of the aromatic ring 1 alkyl substituted (e.g. benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl, etc. arylalkyl Etc.), removing a hydrogen atom from a ring (e.g., anthraquinone, etc.) substituted for a part of the hydrogen atoms constituting the aromatic ring by an oxo group, etc. Thia anthracene-9-one, etc.) removes one hydrogen atom, etc. The carbon number of the above-mentioned alkylene (an alkyl chain in an arylalkyl group) is preferably 1 to 4, more preferably 1 to 2, and particularly preferably 1.

R’201中之環狀之脂肪族烴基舉例為構造中含環之脂肪族烴基。作為構造中含環之脂肪族烴基,舉例為脂環式烴基(自脂肪族烴環去除1個氫原子之基)、脂環式烴基鍵結於直鏈狀或分支鏈狀之脂肪族烴基之末端之基、脂環式烴基介隔於直鏈狀或分支鏈狀之脂肪族烴基之中間之基等。上述脂環式烴基較好碳數為3~20,更好為3~12。 上述脂環式烴基可多環式基,亦可為單環式基。作為單環式之脂環式烴基,較好為自單環烷去除1個以上氫原子之基。該單環烷較好為碳數3~6者,具體而言為環戊烷、環己烷等。作為多環式之脂肪族烴基較好為自多環烷去除1個以上之氫原子之基,作為該多環烷較好為碳數7~30者。其中,作為該多環烷,更好為金剛烷、降冰片烷、異冰片烷、三環癸烷、四環十二烷等之具有橋接環系之多環式骨架之多環烷;具有類固醇骨架之環式基等之具有縮合環系之多環系骨架之多環烷。 R '201 in the example a cyclic aliphatic hydrocarbon group of an aliphatic hydrocarbon-containing rings for the structure. Examples of the ring-containing aliphatic hydrocarbon group in the structure include an alicyclic hydrocarbon group (a group in which one hydrogen atom is removed from the aliphatic hydrocarbon ring), and an alicyclic hydrocarbon group bonded to a linear or branched aliphatic hydrocarbon group. The terminal group and the alicyclic hydrocarbon group are intervened by a linear or branched aliphatic hydrocarbon group. The carbon number of the alicyclic hydrocarbon group is preferably 3-20, more preferably 3-12. The alicyclic hydrocarbon group may be a polycyclic group or a monocyclic group. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a monocycloalkane. The monocycloalkane is preferably one having 3 to 6 carbon atoms, and specifically, cyclopentane, cyclohexane, or the like. The polycyclic aliphatic hydrocarbon group is preferably a group in which one or more hydrogen atoms are removed from the polycycloalkane, and the polycycloalkane is preferably one having 7 to 30 carbon atoms. Among them, the polycycloalkane is more preferably a polycycloalkane having a bridged ring system such as adamantane, norbornane, isobornane, tricyclodecane, tetracyclododecane, and the like; having a steroid; Polycyclic alkanes having a condensed ring system such as a cyclic radical of a skeleton.

其中,作為R’201之環狀之脂肪族烴基較好為自單環烷或多環烷去除1個以上氫原子之基,更好為自多環烷去除1個氫原子之基,特佳為金剛烷基、降冰片基,最好為金剛烷基。 Wherein, as R 'of the cyclic aliphatic hydrocarbon group of 201 is preferably from a monocyclic or polycyclic alkyl alkoxy removing one or more hydrogen atoms of the groups, more preferably from polycyclic alkyl group removal of a hydrogen atom, and particularly preferably Adamantyl and norbornyl, preferably adamantyl.

可鍵結於脂環式烴基之直鏈狀或分支鏈狀之脂肪族烴基較好碳數為1~10,更好為1~6,又更好為1~4,最好為1~3。作為直鏈狀脂肪族烴基較好為直鏈狀伸烷基,具體而言舉例為亞甲基[-CH2-]、伸乙基[-(CH2)2-]、三亞甲基[-(CH2)3-]、四亞甲基[-(CH2)4-]、五亞甲基[-(CH2)5-]等。作為分支鏈狀之脂肪族烴基較好為分支鏈狀之伸烷基,具體舉例為-CH(CH3)-、-CH(CH2CH3)-、-CH(CH3)2-、-C(CH3)(CH2CH3)-、-C(CH3)(CH2CH2CH3)-、-C(CH2CH3)2-等之烷基亞甲基;-CH(CH3)CH2-、-CH(CH3)CH(CH3)-、-C(CH3)2CH2-、-CH(CH2CH3)CH2-、-C(CH2CH3)2CH2-等之烷基伸乙基;-CH(CH3)CH2CH2-、 -CH2CH(CH3)CH2-等之烷基三亞甲基;-CH(CH3)CH2CH2CH2-、-CH2CH(CH3)CH2CH2-等之烷基四亞甲基等之烷基伸烷基等。烷基伸烷基中之烷基較好為碳數1~5之直鏈狀烷基。 The linear or branched aliphatic hydrocarbon group which can be bonded to the alicyclic hydrocarbon group preferably has a carbon number of 1 to 10, more preferably 1 to 6, still more preferably 1 to 4, and most preferably 1 to 3. . The linear aliphatic hydrocarbon group is preferably a linear alkylene group, and specific examples thereof include methylene [-CH 2- ], ethylene [-(CH 2 ) 2- ], and trimethylene [- (CH 2 ) 3- ], tetramethylene [-(CH 2 ) 4- ], pentamethylene [-(CH 2 ) 5- ], and the like. The branched aliphatic hydrocarbon group is preferably a branched chain alkylene, and specific examples are -CH (CH 3 )-, -CH (CH 2 CH 3 )-, -CH (CH 3 ) 2 -,- C (CH 3 ) (CH 2 CH 3 )-, -C (CH 3 ) (CH 2 CH 2 CH 3 )-, -C (CH 2 CH 3 ) 2- , etc. alkyl methylene; -CH ( CH 3 ) CH 2- , -CH (CH 3 ) CH (CH 3 )-, -C (CH 3 ) 2 CH 2- , -CH (CH 2 CH 3 ) CH 2- , -C (CH 2 CH 3 ) 2 CH 2 -etc. alkylene ethyl groups; -CH (CH 3 ) CH 2 CH 2- , -CH 2 CH (CH 3 ) CH 2 -etc. alkyltrimethylene groups; -CH (CH 3 ) CH 2 CH 2 CH 2- , -CH 2 CH (CH 3 ) CH 2 CH 2- , etc. alkyl alkylenes such as tetramethylene and the like. The alkyl group in the alkylene alkyl group is preferably a linear alkyl group having 1 to 5 carbon atoms.

可具有取代基之鏈狀烷基: Chain alkyl groups which may have substituents:

作為R’201之可具有取代基之鏈狀烷基可為直鏈狀或分支鏈狀之任一者。作為直鏈狀之烷基,較好碳數為1~20,更好為1~15,最好為1~10。具體而言舉例為例如甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、異十三烷基、十四烷基、十五烷基、十六烷基、異十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基、二十二烷基等。 R'201 may have a linear alkyl group which may have a substituent and either a linear or branched chain. As the linear alkyl group, the carbon number is preferably 1 to 20, more preferably 1 to 15, and most preferably 1 to 10. Specific examples are methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, Isotridecyl, tetradecyl, pentadecyl, hexadecyl, isohexadecyl, heptadecyl, octadecyl, undecyl, eicosyl, twenty-one Alkyl, behenyl, etc.

作為分支鏈狀之烷基,較好碳數為3~20,更好為3~15,最好為3~10。具體而言舉例為例如1-甲基乙基、1-甲基丙基、2-甲基丙基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1-乙基丁基、2-乙基丁基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基等。 As the branched chain alkyl group, the number of carbon atoms is preferably 3 to 20, more preferably 3 to 15, and most preferably 3 to 10. Specific examples are 1-methylethyl, 1-methylpropyl, 2-methylpropyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1-methyl Ethylbutyl, 2-ethylbutyl, 1-methylpentyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, and the like.

可具有取代基之鏈狀烯基: Alkenyl group which may have a substituent:

作為R’201之鏈狀烯基可為直鏈狀或分支鏈狀之任一者,較好碳數為2~10,更好為2~5,又更好為2~4,特佳為3。作為直鏈狀之烯基舉例為例如乙烯基、丙烯基(烯丙 基)、丁烯基等。作為分支鏈狀之烯基舉例為例如1-甲基乙烯基、2-甲基乙烯基、1-甲基丙烯基、2-甲基丙烯基等。作為鏈狀之烯基,上述中較好為直鏈狀烯基,更好為乙烯基、丙烯基,特佳為乙烯基。 As R '201 of chain alkenyl group may be any linear or branched chain of one, preferably from 2 to 10 carbon atoms, more preferably 2 to 5, and more preferably from 2 to 4, particularly preferably 3. Examples of the linear alkenyl group include a vinyl group, an allyl group, an allyl group, and a butenyl group. Examples of the branched alkenyl group include 1-methylvinyl, 2-methylvinyl, 1-methylpropenyl, 2-methpropenyl, and the like. As the chain-shaped alkenyl group, a linear alkenyl group is preferable, a vinyl group and a propenyl group are more preferable, and a vinyl group is particularly preferable.

作為R’201之環式基、鏈狀之烷基或烯基中之取代基,舉例為例如烷氧基、鹵原子、鹵化烷基、羥基、羰基、硝基、胺基、氧代基、上述R’201之環式基等。 As the cyclic group R '201, the chain of the alkyl or alkenyl group of substituent groups, for example, for example, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, nitro group, amino group, oxo group, the above-described R '201 of a cyclic group.

其中,R’201較好為可具有取代基之環式基、可具有取代基之鏈狀烷基。 Among these, R'201 is preferably a cyclic group which may have a substituent, and a linear alkyl group which may have a substituent.

R201~R203、R206~R207、R211~R212相互鍵結與環中之硫原子一起形成環時,亦可經由硫原子、氧原子、氮原子等之雜原子或、羰基、-SO-、-SO2-、-SO3-、-COO-、-CONH-或-N(RN)-(該RN為碳數1~5之烷基)等之官能基鍵結。作為形成之環,較好於其骨架中含有式中之硫原子之1個環含有硫原子,且為3~10員環,特佳為5~7員環。作為形成之環之具體例舉例為例如噻吩基、噻唑基、苯并噻吩環、噻蒽環、苯并噻吩環、二苯并噻吩環、9H-硫雜蒽環、硫雜蒽酮環、噻蒽環、二苯并氧硫雜環己烷(phenoxathiin)、四氫噻吩鎓環、四氫硫吡喃鎓環等。 When R 201 to R 203 , R 206 to R 207 , R 211 to R 212 are bonded to each other to form a ring together with a sulfur atom in the ring, a hetero atom such as a sulfur atom, an oxygen atom, a nitrogen atom, or a carbonyl group, Functional groups such as -SO-, -SO 2- , -SO 3- , -COO-, -CONH-, or -N (R N )-(the R N is an alkyl group having 1 to 5 carbon atoms) are bonded. The formed ring is preferably a ring having 3 to 10 members, and particularly preferably a ring having 5 to 7 members, in which one ring contains a sulfur atom in the formula. Specific examples of the formed ring include, for example, thienyl, thiazolyl, benzothiophene ring, thioanthracene ring, benzothiophene ring, dibenzothiophene ring, 9H-thioanthracene ring, thioanthrone ring, thia Anthracene ring, phenoxathiin, tetrahydrothienium ring, tetrahydrothiopyranium ring and the like.

R208~R209分別獨立表示氫原子或碳數1~5之烷基,較好為氫原子或碳數1~3之烷基,成為烷基時,亦可相互鍵結形成環。 R 208 to R 209 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms. When they are alkyl groups, they may be bonded to each other to form a ring.

R210為可具有取代基之芳基、可具有取代基之烷基、可具有取代基之烯基、或可具有取代基之含-SO2- 之環式基。R210之芳基舉例為碳數6~20之無取代之芳基,較好為苯基、萘基。R210中之烷基為鏈狀或環狀烷基,較好為碳數1~30者。R210之烯基較好碳數為2~10。 R 210 is an aryl group which may have a substituent, an alkyl group which may have a substituent, an alkenyl group which may have a substituent, or a cyclic group containing -SO 2 -which may have a substituent. Examples of the aryl group of R 210 include an unsubstituted aryl group having 6 to 20 carbon atoms, preferably a phenyl group and a naphthyl group. The alkyl group in R 210 is a chain or cyclic alkyl group, and it is preferably one having 1 to 30 carbon atoms. The alkenyl group of R 210 preferably has 2 to 10 carbon atoms.

Y210分別獨立表示伸芳基、伸烷基或伸烯基。 Y 210 each independently represents an arylene group, an alkylene group or an alkylene group.

Y210之伸芳基舉例為自R’201之芳香族烴基所例示之芳基去除1個氫原子之基。Y210之伸烷基、伸烯基舉例為自作為R’201之鏈狀烷基、鏈狀烯基所例示之基去除1個氫原子之基。 Y 210 Examples of an arylene group is exemplified an aryl group from the R 'group is removed 201. aromatic hydrocarbon one hydrogen atoms. Examples of the alkylene group and the alkenyl group of Y 210 include a group in which one hydrogen atom is removed from the group exemplified as the linear alkyl group and the alkenyl group of R ′ 201 .

上述式(ca-4)中,x為1或2。W201為(x+1)價亦即2價或3價連結基。W201中之2價連結基較好為可具有取代基之2價烴基,較好與上述式(anv0)中之以REP例示之可具有取代基之2價烴基相同之基。W201中之2價連結基可為直鏈狀、分支鏈狀、環狀之任一者,較好為環狀。其中較好於伸芳基之兩端組合2個羰基而成之基,或僅由伸芳基所成之基。作為伸芳基舉例為伸苯基、伸萘基等,特佳為伸苯基。W201中之3價連結基舉例為自上述W201之2價連結基去除1個氫原子之基、於上述2價連結基進而連結上述2價連結基之基等。W201中之3價連結基較好為於伸芳基鍵結2個羰基之基。 In the formula (ca-4), x is 1 or 2. W 201 is a (x + 1) valence, that is, a divalent or trivalent linking group. The divalent linking group in W 201 is preferably a divalent hydrocarbon group which may have a substituent, and is preferably the same group as the divalent hydrocarbon group which may have a substituent exemplified by R EP in the formula (anv0). The divalent linking group in W 201 may be any of linear, branched, and cyclic, and is preferably cyclic. Among them, a group formed by combining two carbonyl groups at both ends of an arylene group, or a group formed by only an arylene group is preferred. Examples of the arylene group include a phenylene group and a naphthyl group. Particularly preferred is a phenylene group. W 201 in the example 3 divalent linking group connected to a group-based removal of a hydrogen atom from the above-described W 201 of divalent, linking group to the divalent linking group and further the above-described divalent linking group of the like. The trivalent linking group in W 201 is preferably a group in which two carbonyl groups are bonded to an arylene group.

上述式(ca-1)表示之較佳陽離子具體而言舉例為下述式(ca-1-1)~(ca-1-24)分別表示之陽離子。 Specific examples of preferred cations represented by the formula (ca-1) are cations represented by the following formulae (ca-1-1) to (ca-1-24).

Figure TW201801906AD00037
Figure TW201801906AD00037

Figure TW201801906AD00038
Figure TW201801906AD00038

(式中,R”201為氫原子或取代基,作為該取代基與上述R201~R207及R210~R212可具有之取代基所舉例者相同)。 (In the formula, R " 201 is a hydrogen atom or a substituent, and the substituent is the same as those exemplified as the substituents that R 201 to R 207 and R 210 to R 212 may have).

又,作為上述式(ca-1)表示之陽離子亦較好為下述通式(ca-1-25)~(ca-1-36)分別表示之陽離子。 The cation represented by the formula (ca-1) is also preferably a cation represented by the following general formulae (ca-1-25) to (ca-1-36).

Figure TW201801906AD00039
Figure TW201801906AD00039

Figure TW201801906AD00040
Figure TW201801906AD00040

(式中,R’211為烷基,Rhal為氫原子或鹵原子)。 (In the formula, R ' 211 is an alkyl group, and R hal is a hydrogen atom or a halogen atom).

上述式(ca-2)表示之較佳陽離子具體而言舉例為二苯基錪陽離子、雙(4-第三丁基苯基)錪陽離子等。 Specific examples of the preferable cation represented by the formula (ca-2) include a diphenylsulfonium cation, a bis (4-thirdbutylphenyl) sulfonium cation, and the like.

上述式(ca-4)表示之較佳陽離子具體而言舉例為下述通式(ca-4-1)~(ca-4-2)分別表示之陽離子。 Specific examples of preferred cations represented by the formula (ca-4) are cations represented by the following general formulae (ca-4-1) to (ca-4-2), respectively.

Figure TW201801906AD00041
Figure TW201801906AD00041

又,上述式(ca-5)表示之陽離子較好為下述通式(ca-5-1)~(ca-5-2)分別表示之陽離子。 The cation represented by the formula (ca-5) is preferably a cation represented by the following general formulae (ca-5-1) to (ca-5-2), respectively.

Figure TW201801906AD00042
Figure TW201801906AD00042

(式中,R’211為烷基)。 (Wherein R ' 211 is an alkyl group).

上述中,陽離子部[(Qq+)1/q]較好為通式(ca-1)表示之陽離子,更好為式(ca-1-1)~(ca-1-36)分別表示之陽離子。 Among the above, the cation part [(Q q + ) 1 / q] is preferably a cation represented by the general formula (ca-1), more preferably represented by the formulas (ca-1-1) to (ca-1-36), respectively. cation.

又,如此,光陽離子聚合起始劑中,藉由光產生酸之聚合起始劑亦稱為光酸產生劑。 In addition, among the photocationic polymerization initiators, a polymerization initiator that generates an acid by light is also referred to as a photoacid generator.

(B0)成分可單獨使用1種上述光酸產生劑,亦可組合使用2種以上。接著劑組成物中之(B0)成分之含有比例,相對於含有環氧基之聚合性樹脂成分100質量份,較好為0.01~20質量份,更好為0.1~10質量份,又更好 為0.2~5質量份,特佳為0.5~2質量份。又,接著劑組成物中,光陽離子聚合起始劑中之(B0)成分之含有比例並未特別限定,可根據(B0)成分之構造或源自陰離子部之酸等而適當決定。具體而言,光陽離子聚合起始劑中之(B0)成分之含有比例較好為20~99.999質量%,更好為30~99.99質量%,又更好為40~99.9質量%,特佳為60~99.9質量%,最好為90~99.6質量%。藉由使(B0)成分之含有比例為上述範圍,可使藉由曝光自聚合起始劑發生之複數種酸之強度全體成為適度者,可較好地使聚合性樹脂成分硬化。 (B0) A component may be used individually by 1 type of the said photo-acid generator, and may use 2 or more types together. The content ratio of the component (B0) in the adhesive composition is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and more preferably 100 parts by mass of the polymerizable resin component containing an epoxy group. It is 0.2 to 5 parts by mass, and particularly preferably 0.5 to 2 parts by mass. The content of the (B0) component in the photocationic polymerization initiator in the adhesive composition is not particularly limited, and can be appropriately determined depending on the structure of the (B0) component or the acid derived from the anion part. Specifically, the content ratio of the (B0) component in the photocationic polymerization initiator is preferably 20 to 99.999% by mass, more preferably 30 to 99.99% by mass, still more preferably 40 to 99.9% by mass, and particularly preferably 60 to 99.9 mass%, preferably 90 to 99.6 mass%. When the content ratio of the (B0) component is in the above range, the strength of the plurality of acids generated from the polymerization initiator by exposure can be made moderate as a whole, and the polymerizable resin component can be hardened well.

接著劑組成物中之光陽離子聚合起始劑之含量,相對於具有環氧基之聚合性樹脂成分100質量份,較好為0.01~60質量份,更好為0.05~30質量份,又更好為0.05~20質量份,特佳為0.1~10質量份。光陽離子聚合起始劑之含量若為0.01~60質量份,則可使接著層較好地硬化,可形成於250℃下之動態黏度及於25℃下之楊氏模數較高之接著層。 The content of the photocationic polymerization initiator in the adhesive composition is preferably 0.01 to 60 parts by mass, more preferably 0.05 to 30 parts by mass, and more relative to 100 parts by mass of the polymerizable resin component having an epoxy group. It is preferably from 0.05 to 20 parts by mass, and particularly preferably from 0.1 to 10 parts by mass. If the content of the photocationic polymerization initiator is 0.01 to 60 parts by mass, the adhesive layer can be hardened well, and an adhesive layer having a high dynamic viscosity at 250 ° C and a Young's modulus at 25 ° C can be formed. .

(4)光自由基聚合起始劑 (4) Photo radical polymerization initiator

接著劑組成物亦可藉由光自由基聚合起始劑,使聚合性樹脂成分聚合而構成。 The adhesive agent composition may be configured by polymerizing a polymerizable resin component with a photoradical polymerization initiator.

作為光自由基聚合起始劑具體而言舉例為例如1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基丙烷-1-酮、1-[4-(2-羥基乙氧基)苯基]-2-羥基-2-甲基-1-丙烷- 1-酮、1-(4-異丙基苯基)-2-羥基-2-甲基丙烷-1-酮、1-(4-十二烷基苯基)-2-羥基-2-甲基丙烷-1-酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、雙(4-二甲胺基苯基)酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基丙烷-1-酮、2-苄基-2-二甲胺基-1-(4-嗎啉基苯基)-丁烷-1-酮、乙酮1-[9-乙基-6-(2-甲基苯甲醯基)-9-H-咔唑-3-基]-1-(o-乙醯基肟)、2,4,6-三甲基苯甲醯基二苯基氧化膦、4-苯甲醯基-4’-甲基二甲基硫醚、4-二甲胺基苯甲酸、4-二甲胺基苯甲酸甲酯、4-二甲胺基苯甲酸乙酯、4-二甲胺基苯甲酸丁酯、4-二甲胺基-2-乙基己基苯甲酸、4-二甲胺基-2-異戊基苯甲酸、苄基-β-甲氧基乙基乙縮醛、苄基二甲基縮醛、1-苯基-1,2-丙烷二醇-2-(o-乙氧基羰基)肟、鄰-苯甲醯基苯甲酸甲酯、2,4-二乙基噻噸酮、2-氯噻噸酮、2,4-二甲基噻噸酮、1-氯-4-丙氧基噻噸酮、硫雜蒽、2-氯硫雜蒽、2,4-二乙基硫雜蒽、2-甲基硫雜蒽、2-異丙基硫雜蒽、2-乙基蒽醌、八甲基蒽醌、1,2-苯并蒽醌、2,3-二苯基蒽醌、偶氮雙異丁腈、苯甲醯基過氧化物、異丙苯過氧化物、2-巰基苯并咪唑、2-巰基苯并噁唑、2-巰基苯并噻唑、2-(鄰-氯苯基)-4,5-二苯基咪唑二聚物、2-(鄰-氯苯基)-4,5-二(甲氧基苯基)咪唑二聚物、2-(鄰-氟苯基)-4,5-二苯基咪唑二聚物、2-(鄰-甲氧基苯基)-4,5-二苯基咪唑二聚物、2-(對-甲氧基苯基)-4,5-二苯基咪唑二聚物、2,4,5-三芳基咪唑二聚物、二苯甲酮、2-氯二苯甲酮、4,4’-雙二甲胺基二苯甲酮(亦即米氏酮)、 4,4’-雙二乙胺基二苯甲酮(亦即乙基米氏酮)、4,4’-二氯二苯甲酮、3,3-二甲基-4-甲氧基二苯甲酮、聯苯醯、苯偶因、苯偶因甲醚、苯偶因乙醚、苯偶因異丙醚、苯偶因正丁醚、苯偶因異丁醚、苯偶因第三丁醚、苯乙酮、2,2-二乙氧基苯乙酮、對-二甲基苯乙酮、對-二甲胺基苯丙酮、二氯苯乙酮、三氯苯乙酮、對-第三丁基苯乙酮、對-二甲胺基苯乙酮、對-第三丁基三氯苯乙酮、對-第三丁基二氯苯乙酮、α,α-二氯-4-苯氧基苯乙酮、噻噸酮、2-甲基噻噸酮、2-異丙基噻噸酮、二苯并環庚烯酮(dibenzosuberone)、戊基-4-二甲胺基苯甲酸酯、9-苯基吖啶、1,7-雙-(9-吖啶基)庚烷、1,5-雙-(9-吖啶基)庚烷、1,3-雙-(9-吖啶基)丙烷、對-甲氧基三嗪、2,4,6-三(三氯甲基)-s-三嗪、2-甲基-4,6-雙(三氯甲基)-s-三嗪、2-[2-(5-甲基呋喃-2-基)乙烯基]-4,6-雙(三氯甲基)-s-三嗪、2-[2-(呋喃-2-基)乙烯基]-4,6-雙(三氯甲基)-s-三嗪、2-[2-(4-二乙胺基-2-甲基苯基)乙烯基]-4,6-雙(三氯甲基)-s-三嗪、2-[2-(3,4-二甲氧基苯基)乙烯基]-4,6-雙(三氯甲基)-s-三嗪、2-(4-甲氧基苯基)乙烯基-4,6-雙(三氯甲基)-s-三嗪、2-(4-乙氧基苯乙烯基)-4,6-雙(三氯甲基)-s-三嗪、2-(4-正丁氧基苯基)-4,6-雙(三氯甲基)-s-三嗪、2,4-雙-三氯甲基-6-(3-溴-4-甲氧基)苯基-s-三嗪、2,4-雙-三氯甲基-6-(2-溴-4-甲氧基)苯基-s-三嗪、2,4-雙-三氯甲基-6-(3-溴-4-甲氧基)苯乙烯基苯基-s-三嗪及2,4-雙-三氯甲基-6-(2- 溴-4-甲氧基)苯乙烯基苯基-s-三嗪等。且作為光自由基聚合起始劑,亦可使用市售品的「IRGACURE OXE02」、「IRGACURE OXE01」、「IRGACURE 369」、「IRGACURE 651」及「IRGACURE 907」(商品名:均為BASF公司製)以及「NCI-831」(商品名:ADEKA公司製)等。 Specific examples of the photo-radical polymerization initiator include 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, 1- [4- (2- Hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propane- 1-ketone, 1- (4-isopropylphenyl) -2-hydroxy-2-methylpropane-1-one, 1- (4-dodecylphenyl) -2-hydroxy-2-methyl Propane-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one, bis (4-dimethylaminophenyl) ketone, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinylpropane-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinylphenyl) -butane- 1-ketone, ethyl ketone 1- [9-ethyl-6- (2-methylbenzylidene) -9-H-carbazol-3-yl] -1- (o-acetamidooxime), 2,4,6-trimethylbenzylidene diphenylphosphine oxide, 4-benzylidene-4'-methyldimethylsulfide, 4-dimethylaminobenzoic acid, 4-dimethyl Methyl aminobenzoate, ethyl 4-dimethylaminobenzoate, butyl 4-dimethylaminobenzoate, 4-dimethylamino-2-ethylhexylbenzoate, 4-dimethylamino 2-Isoamylbenzoic acid, benzyl-β-methoxyethyl acetal, benzyldimethylacetal, 1-phenyl-1,2-propanediol-2- (o-ethyl (Oxycarbonyl) oxime, methyl o-benzylidenebenzoate, 2,4-diethylthioxanthone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone, 1-chloro- 4-propoxythioxanthone, thioanthracene, 2-chlorothioanthracene, 2,4-diethylthioanthracene, 2-methylthio Anthracene, 2-isopropylthioanthracene, 2-ethylanthraquinone, octamethylanthraquinone, 1,2-benzoanthraquinone, 2,3-diphenylanthraquinone, azobisisobutyronitrile, Benzamyl peroxide, cumene peroxide, 2-mercaptobenzimidazole, 2-mercaptobenzoxazole, 2-mercaptobenzothiazole, 2- (o-chlorophenyl) -4,5 -Diphenylimidazole dimer, 2- (o-chlorophenyl) -4,5-bis (methoxyphenyl) imidazole dimer, 2- (o-fluorophenyl) -4,5- Diphenylimidazole dimer, 2- (o-methoxyphenyl) -4,5-diphenylimidazole dimer, 2- (p-methoxyphenyl) -4,5-dibenzene Diimidazole dimer, 2,4,5-triarylimidazole dimer, benzophenone, 2-chlorobenzophenone, 4,4'-bisdimethylaminobenzophenone (i.e. rice Ketone), 4,4'-bisdiethylaminobenzophenone (also known as ethyl Michler's ketone), 4,4'-dichlorobenzophenone, 3,3-dimethyl-4-methoxydi Benzophenone, Biphenylhydrazone, Benzoin, Benzoin methyl ether, Benzoin ether, Benzoin isopropyl ether, Benzoin n-butyl ether, Benzoin isobutyl ether, Benzoin tert-butyl Ether, acetophenone, 2,2-diethoxyacetophenone, p-dimethylacetophenone, p-dimethylaminophenylacetone, dichloroacetophenone, trichloroacetophenone, p- Tert-butylacetophenone, p-dimethylaminoacetophenone, p-tert-butyltrichloroacetophenone, p-tert-butyldichloroacetophenone, α, α-dichloro-4 -Phenoxyacetophenone, thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, dibenzosuberone, pentyl-4-dimethylaminobenzene Formates, 9-phenylacridine, 1,7-bis- (9-acridyl) heptane, 1,5-bis- (9-acridyl) heptane, 1,3-bis- ( 9-acridyl) propane, p-methoxytriazine, 2,4,6-tris (trichloromethyl) -s-triazine, 2-methyl-4,6-bis (trichloromethyl) ) -s-triazine, 2- [2- (5-methylfuran-2-yl) vinyl] -4,6-bis (trichloromethyl) -s-triazine, 2- [2- ( Furan-2-yl) ethylene ] -4,6-bis (trichloromethyl) -s-triazine, 2- [2- (4-diethylamino-2-methylphenyl) vinyl] -4,6-bis (tri Chloromethyl) -s-triazine, 2- [2- (3,4-dimethoxyphenyl) vinyl] -4,6-bis (trichloromethyl) -s-triazine, 2- (4-methoxyphenyl) vinyl-4,6-bis (trichloromethyl) -s-triazine, 2- (4-ethoxystyryl) -4,6-bis (trichloro (Methyl) -s-triazine, 2- (4-n-butoxyphenyl) -4,6-bis (trichloromethyl) -s-triazine, 2,4-bis-trichloromethyl- 6- (3-bromo-4-methoxy) phenyl-s-triazine, 2,4-bis-trichloromethyl-6- (2-bromo-4-methoxy) phenyl-s- Triazine, 2,4-bis-trichloromethyl-6- (3-bromo-4-methoxy) styrylphenyl-s-triazine and 2,4-bis-trichloromethyl-6 -(2- Bromo-4-methoxy) styrylphenyl-s-triazine and the like. As the photoradical polymerization initiator, commercially available products such as "IRGACURE OXE02", "IRGACURE OXE01", "IRGACURE 369", "IRGACURE 651", and "IRGACURE 907" (trade names: all manufactured by BASF) ), And "NCI-831" (brand name: ADEKA).

光自由基聚合起始劑之調配量,相對於100重量份之聚合性單體,較好為0.1重量份以上、20重量份以下,更好為1重量份以上、5重量份以下。 The blending amount of the photo radical polymerization initiator is preferably 0.1 parts by weight or more and 20 parts by weight or less, more preferably 1 part by weight or more and 5 parts by weight or less based on 100 parts by weight of the polymerizable monomer.

(3.其他成分) (3. Other ingredients)

接著劑組成物除了上述聚合性成分及聚合起始劑以外,亦可含有界面活性劑及稀釋溶劑。 The adhesive agent composition may contain a surfactant and a diluent in addition to the polymerizable component and the polymerization initiator.

(1)界面活性劑 (1) Surfactant

接著劑組成物亦可含有界面活性劑。作為界面活性劑舉例為例如聚矽氧系界面活性劑、氟系界面活性劑。作為聚矽氧系界面活性劑具體而言可使用BYK-077、BYK-085、BYK-300、BYK-301、BYK-302、BYK-306、BYK-307、BYK-310、BYK-320、BYK-322、BYK-323、BYK-325、BYK-330、BYK-331、BYK-333、BYK-335、BYK-341、BYK-344、BYK-345、BYK-346、BYK-348、BYK-354、BYK-355、BYK-356、BYK-358、BYK-361、BYK-370、BYK-371、BYK-375、BYK-380、BYK-390(BYK Chemie公司製)等。作為氟系界面活性劑具體而言可使用F-114、F-177、F-410、F-411、F-450、F-493、F-494、F-443、F-444、F-445、F-446、F-470、F-471、F-472SF、F-474、F-475、F-477、F-478、F-479、F-480SF、F-482、F-483、F-484、F-486、F-487、F-172D、MCF-350SF、TF-1025SF、TF-1117SF、TF-1026SF、TF-1128、TF-1127、TF-1129、TF-1126、TF-1130、TF-1116SF、TF-1131、TF-1132、TF-1027SF、TF-1441、TF-1442(DIC公司製);POLYFOX系列之PF-636、PF-6320、PF-656、PF-6520(OMNOVA公司製)等。 The adhesive composition may also contain a surfactant. Examples of the surfactant include a polysiloxane-based surfactant and a fluorine-based surfactant. As the polysiloxane surfactant, specifically, BYK-077, BYK-085, BYK-300, BYK-301, BYK-302, BYK-306, BYK-307, BYK-310, BYK-320, BYK can be used. -322, BYK-323, BYK-325, BYK-330, BYK-331, BYK-333, BYK-335, BYK-341, BYK-344, BYK-345, BYK-346, BYK-348, BYK-354 , BYK-355, BYK-356, BYK-358, BYK-361, BYK-370, BYK-371, BYK-375, BYK-380, BYK-390 (BYK Chemie)). As the fluorine-based surfactant, specifically, F-114, F-177, F-410, F-411, F-450, F-493, F-494, F-443, F-444, and F-445 can be used. , F-446, F-470, F-471, F-472SF, F-474, F-475, F-477, F-478, F-479, F-480SF, F-482, F-483, F -484, F-486, F-487, F-172D, MCF-350SF, TF-1025SF, TF-1117SF, TF-1026SF, TF-1128, TF-1127, TF-1129, TF-1126, TF-1130 , TF-1116SF, TF-1131, TF-1132, TF-1027SF, TF-1441, TF-1442 (manufactured by DIC Corporation); PF-636, PF-6320, PF-656, PF-6520 (OMNOVA of POLYFOX series) Company system) and so on.

界面活性劑可單獨使用1種,亦可併用2種以上。界面活性劑之含量,相對於聚合性樹脂成分之合計100質量份,較好為0.01~10質量份,更好為0.02~2質量份,又更好為0.03~1質量份。藉由設為上述範圍,接著劑組成物塗佈於支撐板2上時,可形成平坦性高的接著層3。 The surfactant may be used singly or in combination of two or more kinds. The content of the surfactant is preferably 0.01 to 10 parts by mass, more preferably 0.02 to 2 parts by mass, and still more preferably 0.03 to 1 part by mass based on 100 parts by mass of the polymerizable resin component in total. By setting it as the said range, when the adhesive composition is apply | coated to the support plate 2, the adhesive layer 3 with high flatness can be formed.

(2)稀釋溶劑 (2) Diluted solvent

接著劑組成物較好含稀釋溶劑。稀釋劑若為可溶解聚合性樹脂成分及聚合起始劑之溶劑則未限定,可較好地使用以下所示之溶劑。 The adhesive composition preferably contains a diluent solvent. The diluent is not limited as long as it is a solvent that can dissolve the polymerizable resin component and the polymerization initiator, and the following solvents can be preferably used.

作為稀釋溶劑可舉例為例如己烷、庚烷、辛烷、壬烷、異壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等之直鏈狀烴、碳數4至15之分支鏈狀之烴,例如環己烷、環庚烷、環辛烷、萘、十氫萘、四氫萘等之環狀 烴,對-薄荷烷、鄰-薄荷烷、間-薄荷烷、二苯基薄荷烷、1,4-萜二醇、1,8-萜二醇、冰片烷、降冰片烷、蒎烷、側柏烷、蒈烷、長葉烯、香葉醇、橙花醇、芳樟醇、檸檬醛、香茅醇、薄荷醇、異薄荷醇、新薄荷醇、α-松油醇、β-松油醇、γ-松油醇、松油烯-1-醇、松油烯-4-醇、乙酸二氫松油酯、1,4-桉葉油醇、1,8-桉葉油醇、龍腦香、香芹酮、紫羅蘭酮、側柏酮、樟腦、d-檸檬烯、l-檸檬烯、二戊烯等之萜品系溶劑;γ-丁內酯等內酯類;丙酮、甲基乙基酮、環己酮(CH)、甲基-正-戊基酮、甲基異戊基酮、2-庚酮等酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等多元醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯或二丙二醇單乙酸酯等之具有酯鍵之化合物、前述多元醇類或前述具有酯鍵之化合物之單甲醚、單乙醚、單丙醚、單丁醚等之單烷醚或單苯醚等之具有醚鍵之化合物等之多元醇類之衍生物(該等中,較好為丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME));如二噁烷之環式醚類、或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、乙酸甲氧基丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酮酸甲酯、乙氧基丙酮酸乙酯等之酯類;苯甲醚、乙基苄基醚、甲苯基甲基醚、二苯基醚、二苄基醚、苯乙醚、丁基苯基醚等之芳香族系有機溶劑等。 Examples of the diluting solvent include linear hydrocarbons such as hexane, heptane, octane, nonane, isononane, methyloctane, decane, undecane, dodecane, and tridecane, and carbon. 4 to 15 branched chain hydrocarbons, such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, tetrahydronaphthalene, etc. Hydrocarbons, p-menthane, o-menthane, m-menthane, diphenylmenthane, 1,4-terpenediol, 1,8-terpenediol, norbornane, norbornane, pinane, side Pane, pinane, longifolene, geraniol, nerol, linalool, citral, citronellol, menthol, isomenthol, neomenthol, alpha-terpineol, beta-terpineol Alcohol, γ-terpineol, terpinen-1-ol, terpinen-4-ol, terpineol acetate, 1,4-eucalyptol, 1,8-eucalyptol, dragon Cerebral, carvone, ionone, thujone, camphor, d-limonene, l-limonene, dipentene and other terpenoid solvents; lactones such as γ-butyrolactone; acetone and methyl ethyl ketone , Ketones such as cyclohexanone (CH), methyl-n-pentyl ketone, methyl isoamyl ketone, 2-heptanone; polyols such as ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol; Compounds having an ester bond, such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, the aforementioned polyols, or a single compound Methyl ether, monoethyl ether, monopropyl ether, monobutyl ether, etc. Derivatives of polyhydric alcohols such as ether-containing compounds having ether bonds (of these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) are preferred); such as the ring of dioxane Ethers, or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxybutyl acetate, methyl pyruvate, ethyl pyruvate, methoxypyruvate Esters of methyl ester, ethyl ethoxypyruvate, anisole, ethyl benzyl ether, tolyl methyl ether, diphenyl ether, dibenzyl ether, phenyl ether, butyl phenyl ether, etc. Aromatic organic solvents.

此外,接著劑組成物亦可對應於聚合性樹脂成分及聚合起始劑之組成而適當含有增感劑。 Moreover, the adhesive agent composition may contain a sensitizer suitably according to the composition of a polymerizable resin component and a polymerization initiator.

<另一實施形態之層合體之製造方法(第二實施形態)> <The manufacturing method of the laminated body of another embodiment (second embodiment)>

本發明之層合體之製造方法不限定於上述實施形態(第一實施形態)之層合體之製造方法。如圖2之(a)~(J)所示,例如一實施形態(第2實施形態)之層合體之製造方法包含下述步驟:於光可透過之支撐板2(支撐體)上形成藉由照射光而變質之分離層4之分離層形成步驟;於該分離層4上塗佈一實施形態之接著劑組成物,而形成接著層3之接著層形成步驟;藉由加熱或曝光使上述接著層3硬化之硬化步驟;及經由上述接著層3層合基板之層合步驟,層合步驟包含於上述接著層3上形成再配線層之再配線層形成步驟;於再配線層上安裝元件之安裝步驟;及藉由密封材密封安裝於再配線層上之元件之密封步驟。此處,硬化步驟後之接著層3之於250℃下之動態黏度為1000Pa.s以上,且於25℃下之楊氏模數為2GPa以上。因此,與第一實施形態之層合體之製造方法相同,使用一實施形態之接著劑組成物,可較好地形成層合體31。 The manufacturing method of the laminated body of this invention is not limited to the manufacturing method of the laminated body of the said embodiment (1st embodiment). As shown in (a) to (J) of FIG. 2, for example, a method for manufacturing a laminated body according to one embodiment (second embodiment) includes the following steps: forming a borrow on a light-transmissive support plate 2 (support body) A step of forming a separation layer of the separation layer 4 that is degraded by irradiation with light; a step of forming an adhesion layer of the adhesion layer 3 by applying an adhesive composition of an embodiment to the separation layer 4; A hardening step of hardening the layer 3; and a laminating step of laminating the substrate through the bonding layer 3, the laminating step includes a rewiring layer forming step of forming a rewiring layer on the bonding layer 3; and mounting a component on the rewiring layer Installation steps; and a sealing step of sealing components mounted on the redistribution layer by a sealing material. Here, the dynamic viscosity at 250 ° C of the adhesive layer 3 after the hardening step is 1000 Pa. s or more, and the Young's modulus at 25 ° C is 2 GPa or more. Therefore, in the same manner as the method for manufacturing the laminated body of the first embodiment, the laminated body 31 can be formed better by using the adhesive composition of one embodiment.

亦即,本實施形態之層合體之製造方法,係替代基板1,而層合具備元件11、密封元件11之密封材6及安裝元件11之再配線層5之密封基板7的層合體之製造方法。更具體而言,藉由密封材密封之元件之晶片區域外再配置端子,而實現半導體之積體化、薄型化及小型化,係基於扇出型技術之層合體之製造方法。又,就扇出型技術,舉例有於晶圓上配置半導體元件並封裝化之扇出型 WLP(Fan-out Wafer Level Package)及面板上配置半導體元件並封裝化之扇出型WLP(Fan-out Wafer Level Package)。 That is, the manufacturing method of the laminated body of this embodiment replaces the substrate 1 and manufactures the laminated body of the sealing substrate 7 laminated with the element 11, the sealing material 6 of the sealing element 11, and the rewiring layer 5 of the mounting element 11. method. More specifically, the semiconductor is integrated, thinned, and miniaturized by arranging terminals outside the wafer area of a component sealed by a sealing material, which is a method of manufacturing a laminate based on a fan-out technology. The fan-out technology is an example of a fan-out type in which semiconductor elements are arranged on a wafer and packaged. WLP (Fan-out Wafer Level Package) and fan-out WLP (Fan-out Wafer Level Package) in which semiconductor elements are arranged on the panel and packaged.

又,基於方便說明,針對第一實施形態中說明之構件具有相同功能之構件,標註相同符號,並省略說明。 In addition, for convenience of explanation, the components having the same functions as those described in the first embodiment are denoted by the same reference numerals, and descriptions thereof are omitted.

[分離層形成步驟~硬化步驟] [Separation layer forming step ~ hardening step]

分離層形成步驟(圖2之(a))中,由於與第一實施形態之分離層形成步驟相同,故其說明省略。且,接著層形成步驟(圖2之(b))除了於支撐板2上形成之分離層4上形成接著層3以外,與第一實施形態相同,故其說明省略。 In the separation layer forming step ((a) in FIG. 2), the same steps as those in the first embodiment are used to form the separation layer, and therefore description thereof is omitted. The step of forming an adhesive layer (FIG. 2 (b)) is the same as the first embodiment except that the adhesive layer 3 is formed on the separation layer 4 formed on the support plate 2, so the description is omitted.

[硬化步驟] [Hardening step]

本實施形態之層合體之製造方法,硬化步驟係在層合步驟之前進行。硬化步驟中,較好對於由接著劑形成步驟形成之接著層3預加熱或將接著層3置於減壓環境下或進行該兩者,而去除接著層3所含之稀釋溶劑。 In the manufacturing method of the laminated body of this embodiment, a hardening process is performed before a lamination process. In the hardening step, it is preferable to pre-heat the adhesive layer 3 formed in the adhesive forming step or to place the adhesive layer 3 under a reduced pressure environment or both, and remove the diluent solvent contained in the adhesive layer 3.

硬化步驟中,藉由加熱去除接著層3所含之稀釋溶劑時,較好於可貼附區域加熱接著層3而去除稀釋溶劑。隨後,於接著層3上形成再配線層5之前,於比可貼附區域更高之溫度,於氮氣等惰性氣體環境下氮氣等惰性氣體環境下或氮氣等惰性氣體環境下使接著層3加熱10~60分 鐘而硬化即可。 In the hardening step, when the diluent solvent contained in the adhesive layer 3 is removed by heating, it is preferable to remove the diluent solvent by heating the adhesive layer 3 in the attachable area. Subsequently, before the redistribution layer 5 is formed on the bonding layer 3, the bonding layer 3 is heated at a higher temperature than the attachable area under an inert gas environment such as nitrogen or an inert gas environment such as nitrogen. 10 ~ 60 minutes Just harden.

又,於硬化步驟中,藉由曝光使接著層3硬化時,亦於例如氮氣等惰性環境下或於減壓環境下,使接著層3曝光而硬化即可。 In the hardening step, when the adhesive layer 3 is hardened by exposure, the adhesive layer 3 may be exposed and hardened in an inert environment such as nitrogen or a reduced pressure environment.

[層合步驟] [Lamination step]

如圖2之(c)~(f)所示,層合步驟中,於硬化之接著層3上形成密封基板7。本實施形態之層合步驟包含再配層形成步驟、安裝步驟、密封步驟及薄化步驟,藉由依該順序進行,而於接著層3上形成密封基板7。 As shown in (c) to (f) of FIG. 2, in the laminating step, a sealing substrate 7 is formed on the hardened adhesive layer 3. The lamination step in this embodiment includes a re-layer formation step, a mounting step, a sealing step, and a thinning step, and the sealing substrate 7 is formed on the adhesive layer 3 by performing in this order.

[再配線層形成步驟] [Rewiring layer formation step]

如圖2之(c)所示,再配線層形成步驟中,於接著層3上形成再配線層5。 As shown in FIG. 2 (c), in the redistribution layer forming step, a redistribution layer 5 is formed on the bonding layer 3.

一實施形態中,作為再配線層5之形成順序,係首先於接著層3上,形成氧化矽(SiOx)、感光性樹脂等之介電體層。由氧化矽所成之介電體層可藉由例如濺鍍法、真空蒸鍍法等形成。由感光性樹脂所成之介電體層可藉由例如旋轉塗佈、浸漬、輥刀、噴霧塗佈及狹縫塗佈等方法塗佈感光性樹脂而形成。 In one embodiment, the sequence for forming the rewiring layer 5, and then based on the first layer 3, a dielectric layer is formed a silicon oxide (SiO x), the photosensitive resin. The dielectric layer made of silicon oxide can be formed by, for example, a sputtering method, a vacuum evaporation method, or the like. The dielectric layer made of a photosensitive resin can be formed by applying the photosensitive resin by a method such as spin coating, dipping, roll knife, spray coating, and slit coating.

接著,於介電體層上,由金屬等之導電體形成配線。作為配線之形成方法,可使用例如光微影(阻劑微影)等之微影處理、蝕刻處理等之習知半導體製程方法。 Next, a wiring is formed on the dielectric layer by a conductive material such as a metal. As a method of forming the wiring, a conventional semiconductor manufacturing method such as photolithography (resistive lithography) or the like can be used.

如此,於進行光微影處理及蝕刻處理等時,接著層3暴露於氟化氫等之酸、TMAH等之鹼、及阻劑溶劑中。尤其於扇出型技術中,作為阻劑溶劑,除了PGMEA以外,使用環戊酮及環己酮等。然而,藉由使用一實施形態之接著劑組成物形成接著層3,而使接著層3具備高的耐藥品性。因此,可防止分離層不僅因暴露於酸、鹼,亦因暴露於阻劑溶劑中所致之溶解或剝離。因此,可於支撐板2上較好地形成再配線層5。 In this way, when performing photolithographic processing, etching processing, etc., the adhesive layer 3 is exposed to an acid such as hydrogen fluoride, an alkali such as TMAH, and a resist solvent. In particular, in the fan-out technology, cyclopentanone, cyclohexanone, and the like are used as the resist solvent in addition to PGMEA. However, by forming the adhesive layer 3 using the adhesive composition of one embodiment, the adhesive layer 3 is provided with high chemical resistance. Therefore, it is possible to prevent the separation layer from being dissolved or peeled off due to not only exposure to acids and alkalis, but also exposure to a resist solvent. Therefore, the redistribution layer 5 can be formed on the support plate 2 well.

(再配線層5) (Rewiring layer 5)

再配線層5亦稱為RDL(Redistribution Layer,再分配層),係構成連接於元件11之配線的薄膜配線體,可具有單層或多層構造。一實施形態中,再配線層5可為於介電體(例如氧化矽(SiOx)、感光性環氧樹脂等之感光性樹脂等)上,藉由導電體(例如鋁、銅、鈦、鎳、金及銀等之金屬以及銀-錫合金等之合金)形成配線者,但不限定於此。 The redistribution layer 5 is also referred to as an RDL (Redistribution Layer, redistribution layer), and is a thin film wiring body constituting wirings connected to the element 11, and may have a single-layer or multi-layer structure. In one embodiment, the redistribution layer 5 may be a dielectric (such as a photosensitive resin such as silicon oxide (SiO x ), a photosensitive epoxy resin, or the like), and a conductive body (such as aluminum, copper, titanium, Metals such as nickel, gold, and silver, and alloys such as silver-tin alloys) form wiring, but are not limited thereto.

[安裝步驟] [installation steps]

如圖2之(d)所示,於安裝步驟中,於再配線層5上安裝元件11。例如元件11之安裝可使用例如晶片安裝器等進行。更具體而言,可舉例為例如透過焊接凸塊於再配線層5上安裝元件11之形態。 As shown in (d) of FIG. 2, in the mounting step, the component 11 is mounted on the redistribution layer 5. For example, the component 11 can be mounted using, for example, a wafer mounter. More specifically, for example, a form in which the element 11 is mounted on the redistribution layer 5 through a solder bump can be exemplified.

(元件11) (Element 11)

元件11係半導體元件或其他元件,可具有單層或多層之構造。又,元件11為半導體元件時,藉由切割密封基板7而得之電子部分成為半導體裝置。又,元件11中,對向於再配線層5上之側之面可形成配線層(未圖示)。 The element 11 is a semiconductor element or other element, and may have a single-layer or multi-layer structure. When the element 11 is a semiconductor element, an electronic portion obtained by cutting the sealing substrate 7 becomes a semiconductor device. In the element 11, a wiring layer (not shown) may be formed on a surface facing the side above the redistribution layer 5.

[密封步驟] [Sealing step]

如圖2之(e)所示,於密封步驟中,以密封材6密封元件11。並未特別限定,而作為參考,密封材6係於例如加熱至100℃以上之狀態,維持高黏度狀態並且使用成形模進行射出成形。此處,接著層3由於具備高的耐熱性,故可較好地防止接著層3因密封材6射出成形時施加之壓力所致之變形。因此,可防止形成於接著層3上之再配線層變形,可精度良好地密封元件。又,安裝步驟中,若於再配線層5上經由焊接凸塊安裝元件11,則於密封元件11之前,亦可藉由底部填充密封該焊接凸塊。 As shown in (e) of FIG. 2, in the sealing step, the element 11 is sealed with a sealing material 6. It is not particularly limited, but for reference, the sealing material 6 is, for example, heated to 100 ° C. or higher, and is maintained in a high viscosity state by injection molding using a molding die. Here, since the adhesive layer 3 has high heat resistance, deformation of the adhesive layer 3 due to the pressure applied during the injection molding of the sealing material 6 can be better prevented. Therefore, deformation of the redistribution layer formed on the bonding layer 3 can be prevented, and the element can be sealed with high accuracy. In addition, in the mounting step, if the component 11 is mounted on the redistribution layer 5 via a solder bump, the solder bump can also be sealed by underfilling before the sealing element 11.

(密封材6) (Sealing material 6)

作為密封材6例如可使用環氧系之樹脂或聚矽氧系之樹脂。密封材6較好並非對每元件11設置,而是對安裝於再配線層5之複數元件11全部一體地密封者。 As the sealing material 6, for example, an epoxy resin or a silicone resin can be used. The sealing material 6 is preferably not provided for each of the elements 11, but is one in which the plurality of elements 11 mounted on the redistribution layer 5 are all integrally sealed.

(密封基板7) (Sealed substrate 7)

密封基板7具備元件11、密封元件11之密封材6、及安 裝元件11之再配線層5。密封基板7較好具備複數元件11,藉由切割此種密封基板7,可獲得複數電子零件。 The sealing substrate 7 includes an element 11, a sealing material 6 for the sealing element 11, and The redistribution layer 5 of the component 11 is mounted. The sealing substrate 7 preferably includes a plurality of elements 11. By cutting such a sealing substrate 7, a plurality of electronic components can be obtained.

[薄化步驟] [Thinning step]

如圖2之(f)所示,薄化步驟中,將密封材6薄化。藉此,於接著層3上,可較好地形成具備再配線層5之密封基板7。 As shown in FIG. 2 (f), in the thinning step, the sealing material 6 is thinned. Thereby, the sealing substrate 7 provided with the redistribution layer 5 can be formed on the adhesive layer 3 well.

<另一實施形態之基板處理方法(第二實施形態)> <Substrate Processing Method of Another Embodiment (Second Embodiment)>

其次,針對另一實施形態(第二實施形態)之基板處理方法加以說明。本實施形態之基板處理方法包含:藉由第二實施形態之層合體之製造方法製造層合體30之層合體製造步驟(圖2之(a)~(f));於層合體製造步驟後,經由支撐板2對分離層4照射光而使分離層4變質,並自基板1分離支撐板2之分離步驟(圖2之(g)及(h));分離步驟後,藉由研削去除再配線層5側之接著層3之殘渣之接著層去除步驟(圖2之(i)及(j))。又,圖2之(a)~(f)所示之層合體製造步驟由於與第二實施形態之層合體之製造方法相同,故其說明省略。 Next, a substrate processing method according to another embodiment (second embodiment) will be described. The substrate processing method of this embodiment includes the steps of manufacturing the laminated body 30 (see (a) to (f) in FIG. 2) by using the manufacturing method of the laminated body of the second embodiment; after the manufacturing step of the laminated body, The separation layer 4 is deteriorated by irradiating the separation layer 4 with light through the support plate 2 and the separation step of separating the support plate 2 from the substrate 1 ((g) and (h) in FIG. 2); after the separation step, it is removed by grinding and then The adhesive layer removing step of the residue of the adhesive layer 3 on the wiring layer 5 side ((i) and (j) in FIG. 2). In addition, since the manufacturing steps of the laminated body shown in (a) to (f) of FIG. 2 are the same as the manufacturing method of the laminated body of the second embodiment, the description thereof is omitted.

又,分離步驟及接著層去除步驟中,除了代替基板1,而使用密封基板7以外,由於與第一實施形態相同,故其說明省略。 The separation step and the subsequent layer removal step are the same as those of the first embodiment except that the sealing substrate 7 is used instead of the substrate 1, and the description thereof is omitted.

[其他步驟] [Other steps]

又,本實施形態之基板處理方法亦可對由圖2之(j)所得之密封基板7之再配線層5形成BGA(Ball Grid Array,球格柵陣列),進行切割處理等之處理。藉此,由於不使用矽中介板即可製造半導體裝置,故可達成半導體裝置之進一步薄型化。 In addition, the substrate processing method of this embodiment may also form a BGA (Ball Grid Array) on the redistribution layer 5 of the sealing substrate 7 obtained in (j) of FIG. 2 and perform processing such as cutting. Accordingly, since a semiconductor device can be manufactured without using a silicon interposer, further reduction in thickness of the semiconductor device can be achieved.

<一變化例之層合體之製造方法> <Manufacturing method of laminated body of a modification>

本發明之層合體之製造方法不限定於上述實施形態。例如一變化例之層合體之製造方法中,於接著層3上首先安裝元件11,藉由密封材6密封該元件11後,形成再配線層5而構成。 The manufacturing method of the laminated body of this invention is not limited to the said embodiment. For example, in a manufacturing method of a laminated body according to a modified example, an element 11 is first mounted on the adhesive layer 3, and the element 11 is sealed with a sealing material 6 to form a rewiring layer 5.

[分離層形成步驟~接著層形成步驟] [Separation layer forming step ~ Next layer forming step]

分離層形成步驟(圖3之(a))及接著層形成步驟(圖3之(b))由於與第二實施形態相同,故其說明省略。 Since the separation layer forming step (FIG. 3 (a)) and the subsequent layer forming step (FIG. 3 (b)) are the same as those in the second embodiment, description thereof will be omitted.

[層合步驟] [Lamination step]

如圖3之(c)~(f)所示,層合步驟係於接著層3上,形成密封基板7。本實施形態之層合步驟係依序進行安裝步驟、密封步驟、薄化步驟及再配層形成步驟,硬化步驟係於安裝步驟後、密封步驟前進行。 As shown in (c) to (f) of FIG. 3, the lamination step is performed on the adhesion layer 3 to form a sealing substrate 7. The lamination step in this embodiment is performed sequentially in the mounting step, the sealing step, the thinning step, and the re-forming step, and the hardening step is performed after the mounting step and before the sealing step.

[安裝步驟] [installation steps]

如圖3之(c)所示,於安裝步驟,於接著層3上安裝元件11。元件11對接著層3上之配置,可於加熱接著層3之狀態,例如使用晶片安裝器等進行。 As shown in FIG. 3 (c), in the mounting step, the component 11 is mounted on the bonding layer 3. The arrangement of the element 11 on the bonding layer 3 can be performed while heating the bonding layer 3, for example, using a wafer mounter or the like.

[硬化步驟] [Hardening step]

本變化例之層合體之製造方法係於安裝步驟後,使接著層3硬化。藉此,於之後之密封步驟中,可較好地防止安裝於接著層3上之元件11之位置偏移。又,硬化步驟中之接著層3之硬化條件由於與第一實施形態及第二實施形態之層合體之製造方法之硬化步驟相同,故其說明省略。 The manufacturing method of the laminated body of this modification is hardening the adhesive layer 3 after an installation process. Thereby, in the subsequent sealing step, the positional deviation of the component 11 mounted on the bonding layer 3 can be better prevented. The hardening conditions of the bonding layer 3 in the hardening step are the same as those in the manufacturing method of the laminated body of the first embodiment and the second embodiment, and therefore description thereof is omitted.

[密封步驟] [Sealing step]

如圖3之(d)所示,於密封步驟中,藉由密封材6密封元件11。密封材6係例如使用成形模射出成形。又,不用說亦與第二實施形態相同,於密封步驟密封元件11時,可防止接著層3產生變形。 As shown in FIG. 3 (d), in the sealing step, the element 11 is sealed by the sealing material 6. The sealing material 6 is injection-molded using a molding die, for example. It is needless to say that, similarly to the second embodiment, deformation of the adhesive layer 3 can be prevented when the element 11 is sealed in the sealing step.

[薄化步驟] [Thinning step]

如圖3之(e)所示,於薄化步驟中,使密封材6薄化。密封材6只要薄化至例如使元件11之端子部自密封材6露出即可。 As shown in FIG. 3 (e), in the thinning step, the sealing material 6 is thinned. The sealing material 6 may be thinned so that, for example, the terminal portion of the element 11 is exposed from the sealing material 6.

[再配線層形成步驟] [Rewiring layer formation step]

如圖3之(f)所示,於在配線形成步驟中,於藉由密 封材6密封之元件11上形成再配線層5。 As shown in (f) of FIG. 3, in the wiring forming step, A redistribution layer 5 is formed on the element 11 sealed by the sealing material 6.

一實施形態中,作為再配線層5之形成順序由於可與第二實施形態同樣進行,故其說明省略。 Since the formation sequence of the redistribution layer 5 in one embodiment can be performed in the same manner as in the second embodiment, the description thereof is omitted.

藉由以上步驟,可獲得層合體32。 Through the above steps, a laminate 32 can be obtained.

<一變化例之基板處理方法> <Variation of substrate processing method>

一變化例之基板處理方法包含層合體製造步驟(圖3之(a)~(f))、分離步驟(圖3之(g)及(h))、及接著層去除步驟(圖3之(i)及(j)),由於與第二實施形態之基板處理方法相同,故其說明省略。 A substrate processing method according to a modification includes a laminate manufacturing step ((a) to (f) in FIG. 3), a separation step ((g) and (h) in FIG. 3), and a subsequent layer removing step ((3) i) and (j)) are the same as those of the substrate processing method of the second embodiment, so descriptions thereof are omitted.

<另一實施形態之層合體之製造方法及基板處理方法> <Manufacturing method and substrate processing method of laminated body of another embodiment>

本發明之層合體之製造方法及基板處理方法不限定於上述實施形態(第一實施形態及第二實施形態及一變化例)。例如另一實施形態之層合體之製造方法係將藉由上述第一實施形態、第二實施形態及第二實施形態之層合體之製造方法形成之密封基板經由其他接著層層合於另一支撐板(支撐體)之層合體之製造方法,該其他接著層係由本發明一實施形態之接著劑組成物形成。 The manufacturing method and substrate processing method of the laminated body of this invention are not limited to the said embodiment (1st embodiment, 2nd embodiment, and a modification). For example, in the method for manufacturing a laminated body according to another embodiment, the sealing substrate formed by the method for manufacturing a laminated body according to the first embodiment, the second embodiment, and the second embodiment described above is laminated on another support through another bonding layer. In the method for manufacturing a laminate of a board (support), the other adhesive layer is formed of the adhesive composition according to an embodiment of the present invention.

依據上述構成,例如藉由於250℃下之動態黏度為1000Pa.s以上之具備高耐熱性之接著層,將密封基板接著於支撐板,而可於具備矽中介板之密封基板或於替換矽中介板而具備再配線層之密封基板上形成絕緣層或焊料球等。又,密封基板上亦可層合經安裝其他元件之密封 體。此時,可較好地防止例如自包含環氧系樹脂或聚矽氧系樹脂等之密封材所發生之逸氣導致之於密封基板與接著層之間產生孔隙。 According to the above structure, for example, because the dynamic viscosity at 250 ° C is 1000Pa. For a bonding layer with high heat resistance above s, the sealing substrate is bonded to the support plate, and an insulating layer or solder ball can be formed on the sealing substrate with a silicon interposer or on the sealing substrate with a redistribution layer instead of the silicon interposer. Wait. In addition, the sealing substrate can also be laminated with a seal mounted with other components. body. In this case, it is possible to better prevent voids from being generated between the sealing substrate and the adhesive layer due to outgassed from a sealing material containing an epoxy resin or a silicone resin.

又,進而其他實施形態之層合體之製造方法及基板之處理方法為不包含分離層形成步驟之構成,亦可代替形成分離層,而例如藉由刀片等之機械手段分離基板與支撐體之構成。此種安裝形態中,殘留於與支持體分離之基板上之接著層亦可藉由研削而較好地去除。 Furthermore, the manufacturing method of the laminated body and the method of processing the substrate of the other embodiments have a configuration that does not include a step of forming a separation layer. Instead of forming a separation layer, the structure of the substrate and the support may be separated by mechanical means such as a blade. . In this mounting form, the adhesive layer remaining on the substrate separated from the support can also be removed well by grinding.

本發明不限於上述之各實施形態,於可在申請專利範圍所示之範圍內進行各種變更,關於適當組合不同實施形態中個別揭示之技術手段而得之實施形態亦包含於本發明之技術範圍內。 The present invention is not limited to the above-mentioned embodiments, and various changes can be made within the scope shown in the scope of the patent application. Embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present invention. Inside.

[實施例] [Example] <接著層及層合體之評價> <Evaluation of Adhesive Layer and Laminate>

測定使用以下之聚合性樹脂成分及聚合起始劑形成之接著層之動態黏度,特定出各接著層之可貼附區域。又,評價使用各接著劑組成物之基板及支撐體之貼附性,並評價所製作之層合體之耐熱性及分離支撐體後之接著層之藉由研削之去除性。 The dynamic viscosity of the adhesive layer formed using the following polymerizable resin component and polymerization initiator was measured, and the attachable area of each adhesive layer was specified. In addition, the adhesiveness of the substrate and the support using each of the adhesive composition was evaluated, and the heat resistance of the produced laminate and the removability of the adhesive layer after separation of the support were evaluated.

[動態黏度之評價] [Evaluation of dynamic viscosity]

針對實施例1~4及比較例1及2之接著層,進行動態黏 度評價。又,動態黏度評價係使用動態黏度測定裝置Reogel-E4000(UBM股份有限公司製)藉由動態黏度測定而進行。又,動態黏度(η*)係於頻率1Hz之條件,於100℃至260℃之溫度範圍以速度5℃/分鐘升溫而評價。 Dynamic adhesion of the adhesive layers of Examples 1 to 4 and Comparative Examples 1 and 2 Degree evaluation. The dynamic viscosity evaluation was performed by dynamic viscosity measurement using a dynamic viscosity measuring device Reogel-E4000 (manufactured by UBM Co., Ltd.). The dynamic viscosity (η *) was evaluated under a condition of a frequency of 1 Hz, and the temperature was raised at a rate of 5 ° C / min in a temperature range of 100 ° C to 260 ° C.

(實施例1~4之接著層) (Adhesive layer of Examples 1 to 4)

於聚合性樹脂成分中調配聚合起始劑,調製接著劑組成物之基礎樹脂組成物,使用液體剪切單元(cell)進行動態黏度測定。實施例1~4之基礎樹脂組成物中使用之聚合性樹脂及聚合起始劑如以下所示。又,以下表1中,顯示實施例1~4之接著層組成及動態黏度之評價結果。 A polymerization initiator is prepared in a polymerizable resin component, a base resin composition of an adhesive composition is prepared, and dynamic viscosity measurement is performed using a liquid shearing cell. The polymerizable resins and polymerization initiators used in the base resin compositions of Examples 1 to 4 are shown below. In addition, Table 1 below shows the evaluation results of the composition and dynamic viscosity of the adhesive layers of Examples 1 to 4.

<<聚合樹脂成分>> << Polymer resin composition >>

.JER157S70(酚醛清漆型環氧樹脂,三菱化學(股)製) . JER157S70 (Novolac epoxy resin, manufactured by Mitsubishi Chemical Corporation)

<<聚合起始劑>> << Polymerization initiator >>

.CXC-1821(熱陽離子聚合起始劑,楠本化成(股)製) . CXC-1821 (Thermal cationic polymerization initiator, manufactured by Kusumoto Kasei Co., Ltd.)

.TAG-2678(熱陽離子聚合起始劑,KING INDUSTRY公司製) . TAG-2678 (thermal cationic polymerization initiator, manufactured by King Industries)

.TAG-2689(熱陽離子聚合起始劑,KING INDUSTRY公司製) . TAG-2689 (thermal cationic polymerization initiator, manufactured by King Industries)

(比較例1及2) (Comparative Examples 1 and 2)

於對於十氫萘100重量份調配乙酸丁酯15重量份之溶劑中,以25重量%濃度溶解樹脂成分。接著,對100重量份之樹脂成分,以成為1重量份之方式添加IRGANOX1010(BASF公司製),添加作為添加溶劑之乙酸丁酯15重量份,調製比較例1及2之接著劑組成物。比較例1及2使用之樹脂成分之組成如以下所示。 The resin component was dissolved at a concentration of 25% by weight in a solvent prepared with 15 parts by weight of butyl acetate with respect to 100 parts by weight of decalin. Next, IRGANOX 1010 (manufactured by BASF) was added to 100 parts by weight of the resin component, and 15 parts by weight of butyl acetate as an addition solvent was added to prepare the adhesive composition of Comparative Examples 1 and 2. The composition of the resin components used in Comparative Examples 1 and 2 is shown below.

<<樹脂成分>> << resin composition >>

.Septon(商品名)V9827(反應交聯型之苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物;SBPS,KURARAY股份有限公司製) . Septon (trade name) V9827 (reactive cross-linked styrene-ethylene-butene-styrene block copolymer; SBPS, manufactured by Kuraray Co., Ltd.)

.Septon 2002(商品名)(苯乙烯-異丁烯-苯乙烯嵌段共聚物;SBPS,KURARAY股份有限公司製) . Septon 2002 (trade name) (styrene-isobutylene-styrene block copolymer; SBPS, manufactured by Kuraray Co., Ltd.)

.丙烯酸系共聚物A1(苯乙烯/甲基丙烯酸二環戊酯/甲基丙烯酸硬脂酯=20/60/20(重量比)之共聚物,分子量10000) . Acrylic copolymer A1 (styrene / dicyclopentyl methacrylate / stearyl methacrylate = 20/60/20 (weight ratio) copolymer, molecular weight 10000)

.APL8008T(環烯烴共聚物,乙烯:四環十二碳烯=80:20之共聚物,三井化學公司製) . APL8008T (Cycloolefin copolymer, ethylene: tetracyclododecene = 80: 20 copolymer, manufactured by Mitsui Chemicals Corporation)

其次,將所調製之比較例1及2之接著劑組成物塗佈於附脫模劑之PET膜上,以大氣壓下之烘箱於100℃、160℃各燒成60分鐘,而去除接著層中所含之溶劑。其次,自PET膜剝下之接著層切成樣品形狀為厚0.5mm及20mm見方,藉由縫隙剪切,測定動態黏度。於以下表1中,顯示 比較例1及2之接著層組成及動態黏度之評價結果。 Next, the prepared adhesive composition of Comparative Examples 1 and 2 was coated on a PET film with a release agent, and baked at 100 ° C and 160 ° C for 60 minutes in an oven at atmospheric pressure to remove the adhesive layer. Contained solvents. Next, the adhesive layer peeled from the PET film was cut into samples having a thickness of 0.5 mm and 20 mm square, and the shear viscosity was measured through a gap to measure the dynamic viscosity. In Table 1 below, Evaluation results of the adhesive layer composition and dynamic viscosity of Comparative Examples 1 and 2.

Figure TW201801906AD00043
Figure TW201801906AD00043

如表1所示,實施例1及2之接著層,於120℃以下之動態黏度為1Pa.s以下。又,實施例3及4之接著層,於160℃以下之動態黏度為1Pa.s以下。因此,可確認實施例1~4之接著層相較於比較例1及2之接著層,可將更低溫度設為貼附溫度區域而較好地利用。 As shown in Table 1, the adhesion viscosities of the adhesive layers of Examples 1 and 2 were 120 Pa below 120 ° C. s or less. In addition, the adhesive layers of Examples 3 and 4 had a dynamic viscosity of 1 Pa below 160 ° C. s or less. Therefore, it can be confirmed that the adhesive layers of Examples 1 to 4 can be used at a lower temperature than the adhesive layers of Comparative Examples 1 and 2 as the attachment temperature region, and can be used better.

且,如表1所示,實施例1~4之接著層於250℃下,接著層之動態黏度為1000Pa.s以上。因此,可確認實施例1~4之接著層相較於比較例1及2之接著層,對於250℃以上之溫度之耐熱性較高。 And, as shown in Table 1, the adhesive layers of Examples 1 to 4 were at 250 ° C, and the dynamic viscosity of the adhesive layer was 1000 Pa. s or more. Therefore, it was confirmed that the adhesive layers of Examples 1 to 4 had higher heat resistance to a temperature of 250 ° C or higher than the adhesive layers of Comparative Examples 1 and 2.

[層合體之評價] [Evaluation of laminate]

作為層合體之評價,針對實施例1~4及比較例1及2之接著劑組成物,進行貼附性之評價、耐熱性之評價及藉由研削之剝離性評價。一併針對由各接著劑組成物形成之接著層進行楊氏模數之測定。 As the evaluation of the laminate, the adhesive compositions of Examples 1 to 4 and Comparative Examples 1 and 2 were evaluated for adhesion, heat resistance, and peelability by grinding. The measurement of the Young's modulus was also performed with respect to the adhesive layer formed from each adhesive composition.

(接著劑組成物之調製) (Preparation of adhesive composition)

針對用於動態黏度之測定者,與同樣實施例1~4之接著層之基礎樹脂組成,分別以成為濃度55重量%之方式,以PGMEA(丙二醇單甲醚乙酸酯)稀釋聚合性樹脂成分,調製實施例1~4之接著劑組成物。 For the measurement of dynamic viscosity, the polymerizable resin component was diluted with PGMEA (propylene glycol monomethyl ether acetate) so as to have a concentration of 55% by weight with the base resin composition of the adhesive layer of the same Examples 1 to 4 , The adhesive composition of Examples 1 to 4 was prepared.

(實施例1~4之層合體之製作) (Production of laminated body of Examples 1 to 4)

於作為基板之半導體晶圓基板(直徑12吋Si,厚0.7μm)上,藉由模製材(環氧系密封材,日立化成公司製),準備形成有模製材層之模製基板,於減壓條件下,以140℃、10分鐘之條件,進行該模製基板之脫水處理。 On a semiconductor wafer substrate (12-inch diameter Si, 0.7 μm thick) as a substrate, a mold substrate (epoxy-based sealing material, manufactured by Hitachi Chemical Co., Ltd.) was used to prepare a mold substrate having a mold material layer. The dewatering treatment of the molded substrate was performed under a pressure condition at 140 ° C for 10 minutes.

實施例1之接著劑組成物旋轉塗佈於模製基板上,以90℃、300秒之條件加熱,進行接著層中所含之PGMEA之去除,形成接著層(厚20μm,接著層形成步驟)。其次,於經形成分離層之玻璃支撐體(直徑12吋,厚0.7mm)之分離層側,經由接著層貼附模製基板,以荷重1t、85℃、300秒之條件,貼附模製基板與玻璃支撐體 (層合步驟)。接著,於200℃、1小時之條件,加熱接著層(硬化步驟),製作實施例1之層合體。 The adhesive composition of Example 1 was spin-coated on a molded substrate, and heated at 90 ° C. for 300 seconds to remove the PGMEA contained in the adhesive layer to form an adhesive layer (20 μm in thickness, followed by a step of forming a layer). . Next, on the separation layer side of the glass support (12 inches in diameter and 0.7 mm thickness) on which the separation layer was formed, the mold substrate was attached through the adhesive layer, and the mold was attached under the conditions of a load of 1t, 85 ° C, and 300 seconds. Substrate and glass support (Lamination step). Next, the adhesive layer was heated at 200 ° C. for 1 hour (hardening step) to prepare the laminate of Example 1.

又,分離層係藉由使用氟碳之電漿CVD法,於玻璃支撐體上形成分離層。作為反應氣體使用C4F8,於流量400sccm、壓力700mTorr、高頻電力2500W及成膜溫度240℃之條件下,進行電漿CVD法,而於玻璃支撐體上形成氟碳膜(厚1μm)之分離層(分離層形成步驟)。 The separation layer is formed on a glass support by a plasma CVD method using fluorocarbon. C 4 F 8 was used as a reaction gas, and a fluorocarbon film (1 μm thick) was formed on a glass support by plasma CVD under conditions of a flow rate of 400 sccm, a pressure of 700 mTorr, a high-frequency power of 2500 W, and a film formation temperature of 240 ° C. Separation layer (separation layer formation step).

(比較例1之層合體之製作) (Production of laminated body of Comparative Example 1)

將比較例1之接著劑組成物旋轉塗佈於以與實施例1所用之模製基板相同順序製作之模製基板上,於90℃、160℃、220℃之溫度各烘烤180秒,而形成膜厚50μm之接著層。接著,以使半導體晶圓基板、接著層、分離層及玻璃支撐體依該順序重疊,於真空下,以215℃、300秒、荷重1t之條件,貼附玻璃支撐體與半導體晶圓基板,製作比較例1之層合體。 The adhesive composition of Comparative Example 1 was spin-coated on a molded substrate prepared in the same order as the molded substrate used in Example 1, and baked at 90 ° C, 160 ° C, and 220 ° C for 180 seconds each, and An adhesive layer having a film thickness of 50 μm was formed. Next, the semiconductor wafer substrate, the adhesive layer, the separation layer, and the glass support are overlapped in this order, and the glass support and the semiconductor wafer substrate are attached under vacuum at 215 ° C., 300 seconds, and a load of 1 t. A laminate of Comparative Example 1 was prepared.

[耐熱性之評價] [Evaluation of heat resistance]

實施例1及比較例1中之使用模製基板之層合體及使用半導體晶圓基板之層合體各在氮氣環境下於250℃、2小時之條件加熱,評價耐熱性。耐熱性之評價以目視進行,於基板與接著層之間未發生孔隙時判定為「○」,於基板與接著層之間發生孔隙時判定為「×」。 The laminated body using a molded substrate and the laminated body using a semiconductor wafer substrate in Example 1 and Comparative Example 1 were each heated at 250 ° C. for 2 hours under a nitrogen atmosphere to evaluate heat resistance. The evaluation of the heat resistance was performed visually, and it was judged as "○" when no pores occurred between the substrate and the adhesive layer, and "X" when pores occurred between the substrate and the adhesive layer.

作為耐熱性評價之結果,具備實施例1之接著 層之層合體,於250℃下,使用模製基板之層合體亦為具有高耐熱性之結果(○)。相對於此,使用比較例1之模製基板之層合體,於模製基板與接著層間確認到孔隙發生(×)。實施例1之接著層於使用模製基板之層合體中耐熱性較高可探討係因為如表1所示,實施例1之接著層之動態黏度高於1000Pa.s,而可更佳地防止起因於自模製基板發生之氣體所致之孔隙發生。 As a result of the heat resistance evaluation, the following of Example 1 was provided. The laminated body of the layer has the result of having a high heat resistance at 250 ° C (molded substrate) (○). In contrast, the laminated body of the molded substrate of Comparative Example 1 was used to confirm the occurrence of voids (×) between the molded substrate and the subsequent layer. The high heat resistance of the adhesive layer of Example 1 in the laminate using a molded substrate can be discussed because, as shown in Table 1, the dynamic viscosity of the adhesive layer of Example 1 is higher than 1000 Pa. s, and can better prevent the occurrence of pores caused by the gas generated from the self-molded substrate.

耐熱性評價後,針對實施例1之層合體及比較例1之層合體,經由玻璃支撐體對分離層照射雷射光。雷射光照射條件係以波長532nm,雷射光直徑180μm,雷射脈衝之被照射區域彼此之中心間距離為180μm,掃描速度6500mm/s,以重複頻率40kHz進行照射。藉此,針對各層合體,分離基板及玻璃支撐體,進行藉由以下所示研削之剝離性評價。 After the heat resistance evaluation, the laminated body of Example 1 and the laminated body of Comparative Example 1 were irradiated with laser light to the separation layer through a glass support. The laser light irradiation conditions were a wavelength of 532 nm, a laser light diameter of 180 μm, a distance between the centers of the irradiated areas of the laser pulses of 180 μm, a scanning speed of 6500 mm / s, and irradiation at a repetition frequency of 40 kHz. Thereby, for each laminate, the substrate and the glass support were separated and evaluated for peelability by grinding as shown below.

[研削之剝離性評價] [Evaluation of peelability of grinding]

針對玻璃支撐體經分離之半導體晶圓基板及模製基板,使用附輪之研磨機研削而進行實施例1之接著層之殘渣研削之剝離性評價。剝離性評價中,使用具備作為輪之GF13-SD180-R15009-100、GF13-SDC320-BE065-50、GF13-SDC340-BE065-50(均為Disco公司製)之研磨機DAG810(Disco公司製)。研削之剝離性係對上述膜厚20μm之接著層及另外製作之經評價之膜厚55μm之接著層兩者進行評價。又,作為參考例,使用具備各輪之研磨 機,對未設有接著層之半導體晶圓基板亦進行剝離性評價。 The separated semiconductor wafer substrate and the molded substrate of the glass support were ground using a grinder with a wheel, and the peelability evaluation of the residue grinding of the adhesive layer of Example 1 was performed. For peelability evaluation, a grinder DAG810 (manufactured by Disco) equipped with a wheel GF13-SD180-R15009-100, GF13-SDC320-BE065-50, and GF13-SDC340-BE065-50 (both manufactured by Disco) was used. The peelability after grinding was evaluated for both the above-mentioned adhesive layer having a film thickness of 20 μm and the separately prepared adhesive layer having an evaluated film thickness of 55 μm. In addition, as a reference example, grinding with each wheel is used. Also, the semiconductor wafer substrate without the adhesive layer was evaluated for peelability.

剝離性評價中,研磨機之操作條件如以下所示。 In the peelability evaluation, the operating conditions of the grinder are as follows.

空氣切削:50μm Air cutting: 50μm

轉軸轉速:3000r/分鐘 Shaft speed: 3000r / min

研磨機送入速度:1.0μm/s Feeding speed of grinding machine: 1.0μm / s

火花散放(spark out):3Rev Spark out: 3Rev

量規設定:1探針(probe) Gauge setting: 1 probe

脫離(escape)量:3.0μm Amount of escape: 3.0 μm

脫離速度:0.3μm/s Detachment speed: 0.3μm / s

研磨機研削水(轉軸):4.0L/分鐘 Grinding water (rotating shaft): 4.0L / min

研磨機研削水(外部噴嘴):0L/分鐘 Grinder grinding water (external nozzle): 0L / min

夾具轉數:275r/分鐘。 Fixture revolutions: 275r / min.

剝離性之評價係評價各輪之損傷有無及接著層殘渣所致之阻塞有無。以目視評價各輪之損傷有無,輪之損傷於與半導體晶圓基板(表2所示之Si)承受之損傷相同程度者評價為「○」,遭受比半導體晶圓基板承受之損傷更大損傷者評價為「×」。又,藉目視評價輪之阻塞有無,輪未因接著層之殘渣而阻塞者評價為「○」,有阻塞者評價為「×」。同時,應評價研削時施加之負荷並測定研磨機之最大電流值。研削之剝離性之評價結果示於表2。 The evaluation of peelability is to evaluate the presence or absence of damage in each round and the presence or absence of blockage caused by the residue of the adhesive layer. Visually evaluate the presence or absence of damage to each wheel. If the damage of the wheel is the same as the damage suffered by the semiconductor wafer substrate (Si shown in Table 2), it is evaluated as "○", and suffered greater damage than the damage suffered by the semiconductor wafer substrate. The evaluation was “×”. In addition, the presence or absence of blockage of the wheel was evaluated visually. Those who did not block the wheel due to the residue of the subsequent layer were evaluated as "○", and those who were blocked were evaluated as "x". At the same time, the load applied during grinding should be evaluated and the maximum current value of the grinder should be measured. Table 2 shows the evaluation results of the peelability of the grinding.

Figure TW201801906AD00044
Figure TW201801906AD00044

如表2所示,實施例1之接著層研削時所受之各輪之損傷無關於接著層膜厚,而與半導體晶圓基板為相同程度(○)。又,如表2所示,實施例1之接著層,於研磨機之最大電流值與研磨半導體晶圓基板時施加之最大電流值為相同程度。因此,可確認實施例1之接著層藉由使用用以使半導體晶圓基板薄化之研磨機裝置進行研削,可較好地剝離。 As shown in Table 2, the damage of each round during the grinding of the bonding layer in Example 1 was not related to the thickness of the bonding layer, and was the same as that of the semiconductor wafer substrate (○). In addition, as shown in Table 2, the maximum current value of the adhesive layer of Example 1 in the polishing machine was the same as the maximum current value applied when the semiconductor wafer substrate was polished. Therefore, it was confirmed that the adhesive layer of Example 1 can be peeled off satisfactorily by grinding using a polishing apparatus for thinning the semiconductor wafer substrate.

[楊氏模數之評價] [Evaluation of Young's Modulus]

實施例1~4之接著劑組成物分別旋轉塗佈於個別半導體晶圓基板(12吋,厚0.7mm)上,以90℃、5分鐘加熱,隨後於200℃、1小時、N2環境下硬化,形成實施例1~4之接著層(厚20μm)。其次,比較例1~2之接著劑組成物分別旋轉塗佈於個別半導體晶圓基板上,於大氣壓下 之加熱板上以90℃、160℃、220℃各燒成3分鐘,形成接著層(厚20μm)。 The adhesive compositions of Examples 1 to 4 were spin-coated on individual semiconductor wafer substrates (12 inches, 0.7 mm thick), heated at 90 ° C for 5 minutes, and then heated at 200 ° C for 1 hour under N 2 environment. It hardened and formed the adhesive layer (thickness 20 micrometers) of Examples 1-4. Next, the adhesive compositions of Comparative Examples 1 to 2 were spin-coated on individual semiconductor wafer substrates, and fired at 90 ° C, 160 ° C, and 220 ° C for 3 minutes each on a hot plate at atmospheric pressure to form an adhesive layer ( 20 μm thick).

隨後,使用FISCHER SCOPE Hm2000測定裝置(FISCHER INSTRUMENTS公司製),以最大試驗荷重:5mN、荷重塗佈時間:20秒,潛變時間:5秒、25℃之條件測定實施例1~4及比較例1及2之接著層之楊氏模數。 Subsequently, using a FISCHER SCOPE Hm2000 measuring device (manufactured by FISCHER INSTRUMENTS), Examples 1 to 4 and Comparative Examples were measured under conditions of a maximum test load: 5 mN, a load application time: 20 seconds, a creep time: 5 seconds, and 25 ° C. Young's modulus of the adjoining layers of 1 and 2.

各接著層之楊氏模數之測定結果示於以下表3。同時,以下表3中,顯示根據上述評價方法進行之實施例2~4及比較例1及2之接著劑組成物之耐熱性及剝離性(對-薄荷烷)之評價結果。 The measurement results of the Young's modulus of each adhesive layer are shown in Table 3 below. Meanwhile, Table 3 below shows the results of evaluating the heat resistance and peelability (p-menthane) of the adhesive composition of Examples 2 to 4 and Comparative Examples 1 and 2 according to the above-mentioned evaluation methods.

Figure TW201801906AD00045
Figure TW201801906AD00045

*使用對-薄荷烷作為剝離液進行接著層之剝離。 * Peel-off of the adhesive layer was performed using para-mentane as a peeling liquid.

實施例1~4之接著劑組成物,比比較例1及2之接著劑組成物,於更低溫度下可獲得1Pa.s以下之動態黏度,可確認提高對基板之濡濕性進行貼附。且貼附硬化後之耐熱性評價中,實施例1~4之層合體於250℃以上之動態黏度為1000Pa.s以上,且使用模製基板之層合體中未見到孔隙發生(○),可確認可獲得比比較例1及2之層合體 更高之耐熱性。且,實施例1~4之接著層之楊氏模數為3.5GPa以上,接著層之殘渣不會阻塞,與半導體晶圓基板同樣可進行研削(○)。比較例1~2係熱塑性樹脂,於達到可貼附區域之動態黏度必須為180℃以上之溫度。又,雖為熱塑性樹脂,但於250℃之高溫區域之動態黏彈性更低。另一方面,實施例1~4之接著劑組成物係使用熱硬化性樹脂,確認在比比較例1~2之接著劑組成物更低溫之貼附性、硬化後之耐熱性、剝離時之研削去除性優異。 The adhesive composition of Examples 1 to 4 can obtain 1 Pa at a lower temperature than the adhesive composition of Comparative Examples 1 and 2. Dynamic viscosity below s can confirm that the wettability of the substrate is improved. And in the evaluation of the heat resistance after hardening, the dynamic viscosity of the laminates of Examples 1 to 4 at 250 ° C or higher was 1000 Pa. s or more, and no pore generation (○) was observed in the laminated body using the molded substrate, it was confirmed that the laminated body was obtained as compared with Comparative Examples 1 and 2. Higher heat resistance. In addition, the Young's modulus of the adhesive layer of Examples 1 to 4 is 3.5 GPa or more, and the residue of the adhesive layer does not clog, and grinding can be performed in the same manner as the semiconductor wafer substrate (○). The thermoplastic resins of Comparative Examples 1 and 2 must have a temperature of 180 ° C. or higher in order to reach the dynamic viscosity of the attachable area. Also, although it is a thermoplastic resin, its dynamic viscoelasticity is lower in a high temperature region of 250 ° C. On the other hand, the adhesive compositions of Examples 1 to 4 used thermosetting resins. It was confirmed that the adhesive compositions at lower temperatures than the adhesive compositions of Comparative Examples 1-2, heat resistance after curing, and peeling Excellent grinding removability.

[產業上之可利用性] [Industrial availability]

本發明可較好地利用於半導體裝置之製造。 The present invention can be suitably used for manufacturing a semiconductor device.

1‧‧‧基板 1‧‧‧ substrate

2‧‧‧支撐板 2‧‧‧ support plate

3‧‧‧接著層 3‧‧‧ Adjacent layer

4‧‧‧分離層 4‧‧‧ separation layer

20‧‧‧研磨機 20‧‧‧Grinding machine

30‧‧‧層合體 30‧‧‧ laminated

Claims (20)

一種層合體之製造方法,其係經由接著層使基板與支撐上述基板之支撐體層合而成之層合體之製造方法,其特徵為包含下述步驟:於上述基板及上述支撐體之至少一者上形成含有聚合性樹脂成分及聚合起始劑之上述接著層之接著層形成步驟,將上述基板與上述支撐體經由上述接著層而層合之層合步驟,及藉由加熱或曝光使上述聚合性樹脂成分聚合而使上述接著層硬化之硬化步驟,硬化之上述接著層於25℃下之楊氏模數為2GPa以上,於250℃下之動態黏度為1000Pa.s以上。 A laminated body manufacturing method is a laminated body manufacturing method in which a substrate and a supporting body supporting the substrate are laminated via an adhesive layer, and is characterized by including the following steps: at least one of the substrate and the supporting body A lamination step of forming the above-mentioned adhesion layer containing a polymerizable resin component and a polymerization initiator, a lamination step of laminating the substrate and the support via the adhesion layer, and polymerizing the above by heating or exposure The hardening step of polymerizing the resin component to harden the adhesive layer, the Young's modulus of the cured adhesive layer at 25 ° C is 2GPa or more, and the dynamic viscosity at 250 ° C is 1000Pa. s or more. 如請求項1之層合體之製造方法,其中上述基板係具備元件、密封該元件之密封材及安裝該元件之再配線層或矽晶圓之密封基板。 For example, the method for manufacturing a laminated body according to claim 1, wherein the substrate is a sealed substrate including a component, a sealing material for sealing the component, and a rewiring layer or a silicon wafer on which the component is mounted. 如請求項1或2之層合體之製造方法,其中上述聚合性樹脂成分係選自由具有環氧基之聚合性樹脂成分、具有乙烯性不飽和雙鍵之聚合性樹脂成分及含有交聯性基之矽氧烷所成之群之至少一種。 The method for producing a laminated body according to claim 1 or 2, wherein the polymerizable resin component is selected from the group consisting of a polymerizable resin component having an epoxy group, a polymerizable resin component having an ethylenically unsaturated double bond, and a crosslinkable group. At least one of the groups formed by siloxanes. 如請求項1或2之層合體之製造方法,其中上述聚合性樹脂成分係具有環氧基之聚合性樹脂成分。 The manufacturing method of the laminated body of Claim 1 or 2 whose said polymerizable resin component is a polymerizable resin component which has an epoxy group. 如請求項4之層合體之製造方法,其中上述具有環氧基之聚合性樹脂成分係選自由環氧樹脂及具有環氧基之丙烯酸樹脂所成之群之至少一種。 The method for producing a laminated body according to claim 4, wherein the polymerizable resin component having an epoxy group is at least one selected from the group consisting of an epoxy resin and an acrylic resin having an epoxy group. 如請求項1或2之層合體之製造方法,其中上述聚合起始劑為熱聚合起始劑,上述硬化步驟係藉由加熱而使上述接著層硬化。 For example, the method for producing a laminated body according to claim 1 or 2, wherein the polymerization initiator is a thermal polymerization initiator, and the hardening step is to harden the adhesive layer by heating. 如請求項1或2之層合體之製造方法,其中上述硬化步驟前之上述接著層之動態黏度為1Pa.s以下。 For example, the method for manufacturing a laminated body according to claim 1 or 2, wherein the dynamic viscosity of the adhesive layer before the hardening step is 1 Pa. s or less. 如請求項1或2之層合體之製造方法,其中上述支撐體係由光可透過之材料所成之支撐體,於上述接著層形成步驟之前,進而包含於該支撐體上形成藉由照射光而變質之分離層之分離層形成步驟。 For example, the method for manufacturing a laminated body according to claim 1 or 2, wherein the above-mentioned support system is made of a light-transmittable support body, and before the above-mentioned subsequent layer formation step, further comprising forming on the support body by irradiating light, A step of forming a separation layer of a deteriorated separation layer. 一種基板處理方法,其係處理基板之基板處理方法,其特徵為包含下述步驟:藉由如請求項1~8中任一項之層合體之製造方法而製造層合體之層合體製造步驟,於上述層合體製造步驟後,自上述層合體分離上述支 撐體之分離步驟,及上述分離步驟後,藉由研削而將上述基板側之上述接著層之殘渣去除之接著層去除步驟。 A substrate processing method is a substrate processing method for processing a substrate, which is characterized by including the steps of: manufacturing a laminated body by a manufacturing method of a laminated body according to any one of claims 1 to 8, After the laminated body manufacturing step, the branch is separated from the laminated body. The support layer separation step and the subsequent layer removal step of removing the residue of the above-mentioned adhesion layer on the substrate side by grinding after the separation step. 一種基板處理方法,其係處理基板之基板處理方法,其特徵為包含下述步驟:藉由如請求項8之層合體之製造方法而製造層合體之層合體製造步驟,於上述層合體製造步驟後,自上述層合體分離上述支撐體之分離步驟,及上述分離步驟,藉由經由光可透過之上述支撐體對上述分離層照射光而自上述層合體分離上述支撐體之步驟。 A substrate processing method, which is a substrate processing method for processing a substrate, is characterized by including the following steps: a laminated body manufacturing step of manufacturing a laminated body by the laminated body manufacturing method as claimed in claim 8, and the above laminated body manufacturing step Then, a step of separating the support from the laminate, and a step of separating the support from the laminate by irradiating the separation layer with light through the support through which the light is transmitted. 一種層合體,其係經由接著層使基板與支撐上述基板之支撐體層合而成之層合體,其特徵為上述接著層係聚合性樹脂成分藉由熱聚合起始劑或光聚合起始劑聚合而成之硬化物,上述接著層於25℃下之楊氏模數為2GPa以上,於250℃下之動態黏度為1000Pa.s以上。 A laminated body is a laminated body in which a substrate and a support supporting the substrate are laminated through an adhesive layer, wherein the adhesive polymerizable resin component is polymerized by a thermal polymerization initiator or a photopolymerization initiator. The resulting hardened product has a Young's modulus of 2 GPa or higher at 25 ° C and a dynamic viscosity of 1000 Pa at 250 ° C. s or more. 如請求項11之層合體,其中上述基板係具備元件、密封該元件之密封材及安裝該元件之再配線層或矽晶圓之密封基板。 For example, the laminated body according to claim 11, wherein the substrate is a sealed substrate including a component, a sealing material for sealing the component, and a rewiring layer or a silicon wafer on which the component is mounted. 如請求項11或12之層合體,其中上述聚合性樹脂成分係選自由具有環氧基之聚合性樹脂成分、具有乙烯性不飽和雙鍵之聚合性樹脂成分及含有交聯性基之矽氧烷所成之群之至少一種。 The laminate according to claim 11 or 12, wherein the polymerizable resin component is selected from the group consisting of a polymerizable resin component having an epoxy group, a polymerizable resin component having an ethylenically unsaturated double bond, and a silicon oxide containing a crosslinkable group. At least one of the groups formed by alkanes. 如請求項11或12之層合體,其中上述聚合性樹脂成分係具有環氧基之聚合性樹脂成分。 The laminate according to claim 11 or 12, wherein the polymerizable resin component is a polymerizable resin component having an epoxy group. 如請求項14之層合體,其中上述具有環氧基之聚合性樹脂成分係選自由環氧樹脂及具有環氧基之丙烯酸樹脂所成之群之至少一種。 The laminated body according to claim 14, wherein the polymerizable resin component having an epoxy group is at least one selected from the group consisting of an epoxy resin and an acrylic resin having an epoxy group. 如請求項11或12之層合體,其中藉由上述熱聚合起始劑,使上述聚合性樹脂成分聚合。 The laminated body according to claim 11 or 12, wherein the polymerizable resin component is polymerized by the thermal polymerization initiator. 如請求項11或12之層合體,其中上述支撐體係由光可透過之材料所成之支撐體,於上述支撐體與上述接著層之間,形成藉由照射光而變質之分離層。 For example, the laminated body of claim 11 or 12, wherein the supporting body made of a light-transmissive material is a supporting body formed between the supporting body and the adhesive layer, and a separation layer that is deteriorated by light irradiation is formed. 一種接著劑組成物,其係用以形成經由接著層使基板與支撐上述基板之支撐體層合而成之層合體中之該接著層之接著劑組成物,其特徵為含有聚合性樹脂成分及熱聚合起始劑或光聚合起始 劑,上述聚合性樹脂成分藉由上述熱聚合起始劑或光聚合起始劑聚合而成之硬化物於25℃下之楊氏模數為2GPa以上,於250℃下之動態黏度為1000Pa.s以上。 An adhesive composition, which is used to form an adhesive composition of the adhesive layer in a laminate in which a substrate and a support for supporting the substrate are laminated via an adhesive layer, which comprises a polymerizable resin component and heat. Polymerization initiator or photopolymerization initiation Agent, the hardened product of the polymerizable resin component polymerized by the thermal polymerization initiator or the photopolymerization initiator has a Young's modulus at 25 ° C of 2 GPa or more, and a dynamic viscosity at 250 ° C of 1,000 Pa. s or more. 如請求項18之接著劑組成物,其中上述聚合性樹脂成分係選自由具有環氧基之聚合性樹脂成分、具有乙烯性不飽和雙鍵之聚合性樹脂成分及含有交聯性基之矽氧烷所成之群之至少一種。 The adhesive composition according to claim 18, wherein the polymerizable resin component is selected from the group consisting of a polymerizable resin component having an epoxy group, a polymerizable resin component having an ethylenically unsaturated double bond, and a silicon oxide containing a crosslinkable group. At least one of the groups formed by alkanes. 如請求項18或19之接著劑組成物,其中形成上述硬化物之前之上述接著劑組成物之動態黏度為1Pa.s以下。 For example, the adhesive composition of claim 18 or 19, wherein the dynamic viscosity of the adhesive composition before forming the cured product is 1 Pa. s or less.
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