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TW201801881A - Replica mold for nano imprinting, manufacturing method thereof, and replica mold manufacturing device for nano imprinting - Google Patents

Replica mold for nano imprinting, manufacturing method thereof, and replica mold manufacturing device for nano imprinting Download PDF

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Publication number
TW201801881A
TW201801881A TW106122628A TW106122628A TW201801881A TW 201801881 A TW201801881 A TW 201801881A TW 106122628 A TW106122628 A TW 106122628A TW 106122628 A TW106122628 A TW 106122628A TW 201801881 A TW201801881 A TW 201801881A
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Taiwan
Prior art keywords
mold
transfer portion
substrate
pattern
transfer
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TW106122628A
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Chinese (zh)
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TWI693141B (en
Inventor
權相民
具滋鵬
丘璜燮
金鉉濟
鄭熙錫
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南韓商吉佳藍科技股份有限公司
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Publication of TWI693141B publication Critical patent/TWI693141B/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/161Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/56Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/60Releasing, lubricating or separating agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0888Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using transparant moulds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • H10D62/118Nanostructure semiconductor bodies
    • H10P76/00
    • H10P76/2041

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Oral & Maxillofacial Surgery (AREA)
  • Toxicology (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

本發明涉及一種奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置。本發明的奈米壓印用複製模的特徵在於,包括:基底,其由塑膠膜形成;以及轉印部,其形成於該基底,其中,該轉印部由樹脂形成。 The invention relates to a replica mold for nano-imprint, a manufacturing method thereof, and a device for manufacturing a replica mold for nano-imprint. The replication mold for nano-imprinting according to the present invention is characterized by comprising: a substrate formed of a plastic film; and a transfer portion formed on the substrate, wherein the transfer portion is formed of a resin.

Description

奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置 Nano embossing replica mold, manufacturing method thereof, and nano embossing replica mold manufacturing device

本發明涉及一種奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置。 The invention relates to a replica mold for nano-imprint, a manufacturing method thereof, and a device for manufacturing a replica mold for nano-imprint.

奈米壓印製程作為一種替代藉由將光刻膠(photoresist)曝光(expose)及顯影(develop)而在基板(substrate)上部形成圖案(pattern)的光刻製程(photo lithography process)的技術,是一種藉由將形成有圖案的衝壓模具轉印(stamping)至基板上部的樹脂,在基板上部形成圖案的製程。 The nano-imprint process is a technology that replaces the photo lithography process in which a pattern is formed on a substrate by exposing and developing a photoresist. It is a process of forming a pattern on a substrate by stamping a patterned stamping die onto a resin on the substrate.

此時,奈米壓印製程所使用的衝壓模具的圖案藉由轉印至複製模的圖案形成。 At this time, the pattern of the stamping mold used in the nano-imprinting process is formed by the pattern transferred to the replication mold.

通常,如圖1所示,衝壓模具2通過附著了形成有圖案PT的複製模1的卷對卷(roll to roll)裝備的卷5時,複製模1的圖案PT被轉印至衝壓模具2,從而在衝壓模具2上形成圖案PT,如圖2所示,圖案PT藉由依次被轉印至複製模1、衝壓模具2及基板3而形成。 Generally, as shown in FIG. 1, when the stamping die 2 passes a roll 5 to which roll-to-roll equipment of the copying die 1 on which the pattern PT is formed, the pattern PT of the copying die 1 is transferred to the stamping die 2. Thus, a pattern PT is formed on the stamping die 2. As shown in FIG. 2, the pattern PT is formed by being sequentially transferred to the copying die 1, the stamping die 2, and the substrate 3.

然而,傳統的複製模1由鎳(Ni)、銅(Cu)等金屬材質形成,因而存在圖案精度低、製造製程複雜、製造單價高的問題。 However, the conventional replica mold 1 is formed of a metal material such as nickel (Ni), copper (Cu), etc., and thus has the problems of low pattern accuracy, complicated manufacturing process, and high manufacturing unit price.

上述作為背景技術而說明的事項僅用於增進對本發明背景的理解,不能被理解為相當於本領域的一般的技術人員所周知的現有技術。 The matters described above as background art are only used to improve the understanding of the background of the present invention and should not be construed as equivalent to the prior art known to those skilled in the art.

現有技術文獻 Prior art literature

專利文獻 Patent literature

專利文獻0001:KR10-2012-0127731(2012.11.23) Patent document 0001: KR10-2012-0127731 (2012.11.23)

本發明的目的在於,提供一種由樹脂形成,因而圖案精度高、製造製程簡單、製造單價低的奈米壓印用複製模、其製造方法及奈米壓印用複製模製造裝置。 An object of the present invention is to provide a nanoimprint replica mold made of resin, which has high pattern accuracy, a simple manufacturing process, and a low manufacturing unit price, a manufacturing method thereof, and a nanoimprint replica mold manufacturing apparatus.

為達成這種目的,本發明的奈米壓印用複製模的特徵在於,包括:基底,其由塑膠膜形成;以及轉印部,其形成於該基底,其中,該轉印部由樹脂形成。 To achieve such an object, the replication die for nanoimprinting according to the present invention is characterized by comprising: a substrate formed of a plastic film; and a transfer portion formed on the substrate, wherein the transfer portion is formed of a resin .

該轉印部的特徵在於,形成有凹凸狀的圖案。 This transfer unit is characterized by having a concave-convex pattern.

為達成這種目的,本發明的奈米壓印用複製模還可以包括:導膜,其形成於該基底,且形成有中孔,以使該轉印部露出。 In order to achieve such an object, the copying die for nanoimprinting of the present invention may further include a guide film formed on the substrate and formed with a middle hole to expose the transfer portion.

為達成這種目的,本發明的奈米壓印用複製模包括:基底,其由塑膠膜形成;轉印部,其形成於該基底;以及導膜,其形成於該基底,且形成有對應於該轉印部的形狀的中孔,以使該轉印部露出。 In order to achieve this object, the replica for nanoimprinting of the present invention includes: a substrate formed of a plastic film; a transfer portion formed on the substrate; and a guide film formed on the substrate and correspondingly formed. A hole in the shape of the transfer portion to expose the transfer portion.

該轉印部的特徵在於,藉由在形成於該導膜的中孔中填充樹脂形成。 The transfer unit is characterized by being filled with a resin in a mesopore formed in the guide film.

較佳為該基底的一面形成有具有彈性的墊層。 Preferably, a cushion layer having elasticity is formed on one side of the substrate.

為達成這種目的,本發明的奈米壓印用複製模製造裝置包括: 填充部,其藉由在形成於導膜的中孔中填充樹脂而形成轉印部;加壓部,在其一側附著有母模,藉由升降該母模而將該母模的圖案轉印至該轉印部;以及照射部,其向該加壓部方向照射光。 To achieve this object, the apparatus for manufacturing a replica mold for nanoimprinting according to the present invention includes: The filling part forms a transfer part by filling a resin in a central hole formed in the guide film; the pressure part has a mother mold attached to one side thereof, and the pattern of the mother mold is transferred by raising and lowering the mother mold. Printing on the transfer portion; and an irradiating portion that irradiates light in the direction of the pressing portion.

為達成這種目的,本發明的奈米壓印用複製模製造方法包括:藉由在形成於導膜的中孔中填充樹脂而形成轉印部的填充步驟;將母模移動至該轉印部,並藉由對該母模加壓而形成圖案的圖案形成步驟;藉由向該轉印部照射光而固化該轉印部的固化步驟;以及去除該導膜的去除步驟。 To achieve such an object, the method for manufacturing a replica mold for nanoimprinting according to the present invention includes: a filling step of forming a transfer portion by filling a resin formed in a central hole of a guide film; and moving the master mold to the transfer A pattern forming step of forming a pattern by pressing the mother mold; a curing step of curing the transfer portion by irradiating the transfer portion with light; and a removing step of removing the guide film.

根據本發明,可以實現如下多種效果。 According to the present invention, the following various effects can be achieved.

第一,具有改善圖案精度的優點。 First, it has the advantage of improving pattern accuracy.

第二,具有製造製程簡單的優點。 Second, it has the advantage of simple manufacturing process.

第三,具有製造單價低的優點。 Third, it has the advantage of low manufacturing unit price.

10‧‧‧基底 10‧‧‧ substrate

20‧‧‧轉印部 20‧‧‧Transfer Department

30‧‧‧導膜 30‧‧‧ Guide film

40‧‧‧墊層 40‧‧‧ cushion

圖1是卷對卷裝備的結構圖。 FIG. 1 is a structural diagram of a roll-to-roll equipment.

圖2是複製模、衝壓模具、基板的圖案形成順序圖。 FIG. 2 is a sequence diagram of pattern formation of a replica mold, a stamping mold, and a substrate.

圖3是本發明的奈米壓印用複製模的結構圖。 FIG. 3 is a configuration diagram of a copying die for nanoimprinting according to the present invention.

圖4是對本發明奈米壓印用複製模的另一實施例的結構圖。 FIG. 4 is a structural view of another embodiment of a copying die for nanoimprinting according to the present invention.

圖5是對本發明奈米壓印用複製模的異物去除的結構圖。 FIG. 5 is a structural diagram of removing foreign matter from a replica mold for nanoimprinting according to the present invention.

圖6是示出對本發明奈米壓印用複製模的異物去除的平面圖的圖。 FIG. 6 is a plan view showing removal of a foreign substance from a copying die for nanoimprinting according to the present invention.

本發明的目的、特定優點及新特徵將在下面結合圖式所描述的詳細說明及實施例中變得更容易理解。值得注意的是,在本說明書中對各圖的構成要素標記參考編號時,就相同的構成要素而言,即使在不同的圖中標示,也儘量使其具有相同的編號。此外,儘管第一、第二等術語可以用於說明多種構成要素,但該構成要素不限於該術語。該術語僅用作區分一個構成要素與另一個構成要素的目的。此外,在說明本發明的過程中,當判斷對相關公知技術的具體說明反而多餘地使本發明的主旨不清楚時,省略其詳細說明。 The purpose, specific advantages and new features of the present invention will be more easily understood in the detailed description and embodiments described below with reference to the drawings. It is worth noting that, in this specification, when the reference numerals are given to the constituent elements of each figure, the same constituent elements are marked with the same number as much as possible even if they are marked in different figures. In addition, although terms such as first and second may be used to describe various constituent elements, the constituent elements are not limited to the term. This term is used only for the purpose of distinguishing one constituent from another. In addition, in the course of explaining the present invention, when it is judged that the specific description of the related publicly known technology unnecessarily makes the subject matter of the present invention unclear, the detailed description thereof is omitted.

如圖3所示,本發明的奈米壓印用複製模包括:基底10;以及轉印部20:其形成於基底10。 As shown in FIG. 3, the replica for nanoimprinting according to the present invention includes a substrate 10 and a transfer portion 20 formed on the substrate 10.

基底10發揮支撐轉印部20的功能,其可以由基板(substrate)、膜(film)等形成,而膜(film)中又尤其可以使用塑膠膜,本發明人將作為塑膠膜的一種的PET膜(Polyethylene phthalate film)用作基底10。 The substrate 10 plays a role of supporting the transfer portion 20, which may be formed of a substrate, a film, and the like, and a plastic film may be particularly used in the film. The inventor will use PET as a kind of plastic film A film (Polyethylene phthalate film) is used as the substrate 10.

轉印部20由樹脂(resin)形成,為後續製程,較佳為由藉由紫外線(ultraviolet,UV)、電子束(electron beam,EB)等光(light)固化的光固化樹脂(light curable resin)形成。 The transfer portion 20 is formed of a resin, which is a subsequent process, and is preferably a light curable resin that is cured by light such as ultraviolet (UV) and electron beam (EB). )form.

轉印部20可以形成為圓形,藉由由母模轉印(stamping),在轉印部20上形成與形成於母模的圖案(pattern)對應的圖案。亦即,藉由轉印(stamping)形成於母模的一面的凹凸狀的圖案在轉印部20上形成與上述母模的圖案對應的凹凸狀的圖案,換言之,在複製模上形成與母模的圖案相反的圖案。 The transfer section 20 may be formed in a circular shape, and a pattern corresponding to a pattern formed on the master mold may be formed on the transfer section 20 by stamping by the master mold. That is, a concave-convex pattern corresponding to the pattern of the master mold is formed on the transfer portion 20 by stamping a concave-convex pattern formed on one side of the master mold, in other words, a reproduction mold is formed on the replica mold. The pattern of the opposite pattern.

例如,當形成於母模的凹狀圖案被轉印至複製模時,在複製 模的轉印部20上形成與凹狀圖案相反的凸狀圖案;形成於複製模的轉印部20上的凸狀圖案被轉印至衝壓模具,在衝壓模具上形成凹狀圖案;形成於衝壓模具的凹狀圖案被轉印至基板,在基板上形成凸狀圖案。 For example, when a concave pattern formed on a master mold is transferred to a replica mold, the A convex pattern opposite to the concave pattern is formed on the transfer portion 20 of the mold; the convex pattern formed on the transfer portion 20 of the transfer mold is transferred to a stamping mold to form a concave pattern on the stamping mold; The concave pattern of the stamping die is transferred to the substrate, and a convex pattern is formed on the substrate.

複製模的圖案被轉印至衝壓模具,而衝壓模具的圖案被轉印至基板,因而形成於複製模的圖案與形成於基板的圖案相同,而與形成於衝壓模具的圖案相反。 The pattern of the replication mold is transferred to the stamping mold, and the pattern of the stamping mold is transferred to the substrate. Therefore, the pattern formed on the replication mold is the same as the pattern formed on the substrate, and is opposite to the pattern formed on the stamping mold.

一方面,母模可以是矽晶片(Si wafer)、石英(quartz)等。 On the one hand, the master mold may be a silicon wafer (Si wafer), quartz (quartz), or the like.

如此,複製模由樹脂形成,而非由鎳、銅等金屬形成,因而具有改善圖案精度的優點。 In this way, the replica mold is formed of a resin rather than a metal such as nickel or copper, and therefore has the advantage of improving pattern accuracy.

此外,傳統的複製模藉由對鎳、銅等金屬實施電鍍的方式製造,而本發明的複製模則藉由轉印形成,因而具有簡化製造製程、改善生產速度、降低製造單價的優點。 In addition, the traditional replica mold is manufactured by electroplating nickel, copper and other metals, and the replica mold of the present invention is formed by transfer printing. Therefore, it has the advantages of simplifying the manufacturing process, improving the production speed, and reducing the manufacturing unit price.

如圖4至圖6所示,本發明的奈米壓印用複製模包括:基底10、轉印部20、導膜30、墊層40。 As shown in FIG. 4 to FIG. 6, the copying die for nanoimprinting according to the present invention includes a substrate 10, a transfer portion 20, a guide film 30, and a cushion layer 40.

將母模轉印至複製模時,複製模的轉印部20的外周面有可能會被暈印而形成異物P。亦即,與轉印前的轉印部20的外周面相比,轉印後的轉印部20的外周面被擴散而暈印,暈印部分固化後形成異物P。 When the master mold is transferred to the transfer mold, the outer peripheral surface of the transfer portion 20 of the transfer mold may be halo-printed to form a foreign matter P. That is, compared with the outer peripheral surface of the transfer portion 20 before the transfer, the outer peripheral surface of the transfer portion 20 after the transfer is diffused and smeared, and the foreign matter P is formed after the haze portion is cured.

形成異物P的複製模被轉印至衝壓模具所存在的問題是,衝壓模具的圖案受損而發生缺陷。 The transfer mold forming the foreign matter P is transferred to the stamping mold, and the problem is that the pattern of the stamping mold is damaged and defects occur.

因此,為防止衝壓模具的圖案受損,防止形成或去除複製模的轉印部20的異物P是極為重要的因素。 Therefore, in order to prevent the pattern of the stamping die from being damaged, it is extremely important to prevent the foreign matter P from forming or removing the transfer portion 20 of the transfer die.

為去除形成於轉印部20的異物P,本發明引入了導膜30。 亦即,藉由使形成有與轉印部20對應的中孔的導膜30位於基底10,防止轉印部20的外周面上形成異物P。 In order to remove the foreign matter P formed in the transfer portion 20, the present invention incorporates a guide film 30. That is, by positioning the guide film 30 having the mesopores corresponding to the transfer portion 20 on the base 10, the formation of the foreign matter P on the outer peripheral surface of the transfer portion 20 is prevented.

下面對導膜30進行詳細說明。 The guide film 30 will be described in detail below.

如圖5及圖6所示,導膜30形成有對應於轉印部20的形狀的中孔。當轉印部20為圓形時,導膜30的中孔也同樣形成為圓形以與之對應。 As shown in FIGS. 5 and 6, the guide film 30 is formed with a middle hole corresponding to the shape of the transfer section 20. When the transfer portion 20 is circular, the middle hole of the guide film 30 is also formed circularly to correspond to it.

因此,轉印部20通過中孔向外部露出,當將母模轉印至複製模時,異物P形成於導膜30上,而不是形成於轉印部20的外周面。 Therefore, the transfer portion 20 is exposed to the outside through the middle hole, and when the mother mold is transferred to the transfer mold, foreign matter P is formed on the guide film 30 instead of being formed on the outer peripheral surface of the transfer portion 20.

之後,去除導膜30即可輕鬆地一併去除形成於導膜30的異物P。 After that, by removing the guide film 30, the foreign matter P formed on the guide film 30 can be easily removed together.

如此,藉由利用導膜30去除異物P,可以防止將複製模轉印至衝壓模具時轉印部20上形成異物P,從而可以防止衝壓模具圖案受損,進而防止發生缺陷。 In this way, by removing the foreign matter P using the guide film 30, it is possible to prevent the foreign matter P from being formed on the transfer portion 20 when the transfer mold is transferred to the stamping die, thereby preventing damage to the stamping die pattern and further preventing defects from occurring.

一方面,為了將複製模轉印至衝壓模具,使複製模附著於卷對卷裝備的卷或壓合裝備的基板,而如果複製模所附著的卷或基板的面不均勻或存在異物等,由樹脂材質形成的轉印部20會通過厚度薄的基底10受到影響,因而存在轉印至衝壓模具時圖案受損而引發缺陷的問題。 On the one hand, in order to transfer the replica mold to the stamping mold, the replica mold is attached to the roll or roll substrate of the roll-to-roll equipment, and if the surface of the roll or substrate to which the replica mold is attached is uneven or foreign matter is present, The transfer portion 20 made of a resin material is affected by the thin substrate 10, and therefore, there is a problem that the pattern is damaged when the transfer portion 20 is transferred to a stamping die, and defects are caused.

本發明中,藉由在基底10上形成墊層40防止轉印時複製模的轉印部20受影響。亦即,藉由在與形成有轉印部20的基底10的一面相反的另一面形成具有彈性的墊層40解決了上述問題。 In the present invention, the pad portion 40 is formed on the substrate 10 to prevent the transfer portion 20 of the transfer mold from being affected during transfer. That is, the above-mentioned problem is solved by forming a cushion layer 40 having elasticity on the opposite side of the substrate 10 on which the transfer portion 20 is formed.

較佳為墊層40形成為比基底10薄、比導膜30厚,墊層40的一面可以附著有未形成中孔的導膜。 Preferably, the underlayer 40 is formed to be thinner than the substrate 10 and thicker than the guide film 30, and one side of the underlayer 40 may be attached with a guide film without forming a mesopore.

此外,墊層40可以是矽(Si),且可以塗覆於基底10而形成。 In addition, the pad layer 40 may be silicon (Si), and may be formed by being coated on the substrate 10.

根據本發明的奈米壓印用複製模,即使複製模所附著的卷或基板的面不均勻或存在異物等,由於具有彈性的墊層40予以緩和傳自卷或基板的不均勻的壓力,因而可以防止不均勻的壓力通過基底10傳達至轉印部20而影響轉印部20。 According to the copying die for nanoimprinting according to the present invention, even if the surface of the roll or substrate to which the copying die is uneven or foreign matter is present, the non-uniform pressure transmitted from the roll or the substrate is relieved by the elastic cushion layer 40 Therefore, it is possible to prevent uneven pressure from being transmitted to the transfer section 20 through the substrate 10 to affect the transfer section 20.

下面對本發明的奈米壓印用複製模製造裝置進行說明 Next, the apparatus for manufacturing a replica mold for nanoimprinting according to the present invention will be described.

本發明的奈米壓印用複製模製造裝置包括:填充部、加壓部、照射部。 The apparatus for manufacturing a replica mold for nanoimprinting according to the present invention includes a filling section, a pressing section, and an irradiation section.

填充部在基底10中填充轉印部20,若基底10上存在形成有中孔的導膜30,則在導膜30的中孔中填充轉印部20。 The filling portion fills the transfer portion 20 in the substrate 10, and if there is a guide film 30 having a mesopore formed on the substrate 10, the transfer portion 20 is filled in the mesopore of the guide film 30.

這種填充部可藉由旋塗(spin coating)方式填充轉印部20,其可以包括:塗覆轉印部20的噴嘴及旋轉轉印部20的電動機。 Such a filling portion may fill the transfer portion 20 by a spin coating method, and may include a nozzle for coating the transfer portion 20 and a motor that rotates the transfer portion 20.

加壓部包括可上下工作的缸體(cylinder)、直線電動機(linear motor)等,且其一面附著有母模。母模與加壓部連動升降,因而母模的圖案被轉印至轉印部20,從而形成圖案。 The pressurizing part includes a cylinder, a linear motor, and the like that can work up and down, and a female mold is attached to one side thereof. The master mold moves up and down in conjunction with the pressurizing section, so the pattern of the master mold is transferred to the transfer section 20 to form a pattern.

照射部向加壓部方向照射紫外線、電子束等光。亦即,藉由向位於加壓部的轉印部20照射紫外線、電子束等光而固化轉印部20。 The irradiation unit irradiates light such as ultraviolet rays and electron beams in the direction of the pressurizing unit. That is, the transfer portion 20 located on the pressurizing portion is irradiated with light such as ultraviolet rays or electron beams to cure the transfer portion 20.

下面簡單說明藉由上述奈米壓印用複製模製造裝置製造複製模的過程。 The process of manufacturing a replica mold by the above-mentioned replica mold manufacturing apparatus for nanoimprinting will be briefly described below.

本發明的奈米壓印用複製模製造方法包括:在形成於導膜30的中孔中填充轉印部20的填充步驟;藉由向轉印部20加壓母模而形成 圖案的圖案形成步驟;藉由向轉印部20照射紫外線、電子束等光而固化轉印部的固化步驟;以及去除導膜30的去除步驟。 The method for manufacturing a replica mold for nano-imprinting according to the present invention includes: a filling step of filling the transfer portion 20 in a central hole formed in the guide film 30; A pattern forming step of a pattern; a curing step of curing the transfer portion by irradiating the transfer portion 20 with light such as ultraviolet rays or an electron beam; and a removing step of removing the guide film 30.

填充步驟包括:在導膜30上塗覆轉印部20的塗覆步驟;旋轉轉印部20的旋轉步驟;以及乾燥轉印部20的烘乾步驟。 The filling step includes a coating step of coating the transfer film 20 on the guide film 30, a rotation step of rotating the transfer film 20, and a drying step of drying the transfer film 20.

一方面,固化步驟可以始於圖案形成步驟中向轉印部20加壓母模之前、加壓母模的過程中、或加壓母模之後中的任一時間點。 On the one hand, the curing step may be started at any time point before the master mold is pressed in the pattern forming step, while the master mold is pressed, or after the master mold is pressed.

儘管上面藉由具體實施例詳細說明了本發明,但僅僅是為具體說明本發明而進行的描述,並不限於本發明所涉及的說明,顯然,本領域的技術人員可以在本發明的技術思想範圍內對其實施變形或改良。 Although the present invention has been described in detail through the specific embodiments, the description is only for the purpose of specifically describing the present invention, and is not limited to the description related to the present invention. Obviously, those skilled in the art can use the technical idea of the present invention Transform or improve it within the scope.

本發明的單純變形及變更均屬於本發明的領域,因而本發明的具體保護範圍將由所附申請專利範圍明確界定。 The simple deformations and changes of the present invention all belong to the field of the present invention, so the specific protection scope of the present invention will be clearly defined by the scope of the attached patent application.

Claims (8)

一種奈米壓印用複製模,包括:基底,其由塑膠膜形成;以及轉印部,其形成於該基底,其中,該轉印部由樹脂形成。 A replication mold for nano-imprinting includes a substrate formed of a plastic film, and a transfer portion formed on the substrate, wherein the transfer portion is formed of a resin. 如申請專利範圍第1項之奈米壓印用複製模,其中,該轉印部形成有凹凸狀的圖案。 For example, the copying mold for nanoimprinting according to the first patent application scope, wherein the transfer portion is formed with a concave-convex pattern. 如申請專利範圍第1項之奈米壓印用複製模,其進一步包括:導膜,其形成於該基底,且形成有中孔,以使該轉印部露出。 For example, the replica mold for nano-imprinting according to item 1 of the patent application scope further includes a guide film formed on the substrate and formed with a middle hole to expose the transfer portion. 一種奈米壓印用複製模,包括:基底,其由塑膠膜形成;轉印部,其形成於該基底;以及導膜,其形成於該基底,且形成有對應於該轉印部的形狀的中孔,以使該轉印部露出。 A replication mold for nano-imprinting includes: a substrate formed of a plastic film; a transfer portion formed on the substrate; and a guide film formed on the substrate and having a shape corresponding to the transfer portion Center hole to expose the transfer section. 如申請專利範圍第4項之奈米壓印用複製模,其中,該轉印部藉由在形成於該導膜的中孔中填充樹脂形成。 For example, the replica mold for nanoimprinting according to item 4 of the patent application scope, wherein the transfer portion is formed by filling a resin in a central hole formed in the guide film. 如申請專利範圍第1至5項中任一項之奈米壓印用複製模,其中,該基底的一面形成有具有彈性的墊層。 For example, the replication mold for nanoimprinting according to any one of claims 1 to 5, wherein a cushion layer having elasticity is formed on one side of the substrate. 一種奈米壓印用複製模製造裝置,包括:填充部,其藉由在形成於導膜的中孔中填充樹脂而形成轉印部;加壓部,在其一側附著有母模,藉由升降該母模而將該母模的圖案轉印至該轉印部;以及 照射部,其向該加壓部方向照射光。 A replication mold manufacturing apparatus for nano-imprinting includes a filling portion that forms a transfer portion by filling a resin formed in a central hole formed in a guide film; a pressure portion that has a mother mold attached to one side thereof, and Transferring the pattern of the master mold to the transfer section by lifting the master mold; and The irradiation unit irradiates light in the direction of the pressing portion. 一種奈米壓印用複製模的製造方法,包括:藉由在形成於導膜的中孔中填充樹脂而形成轉印部的填充步驟;將母模移動至該轉印部,並藉由對該母模加壓而形成圖案的圖案形成步驟;藉由向該轉印部照射光而固化該轉印部的固化步驟;以及去除該導膜的去除步驟。 A method for manufacturing a replica mold for nano-imprinting includes: a filling step of forming a transfer portion by filling a resin formed in a central hole formed in a guide film; moving a master mold to the transfer portion; and A pattern forming step of pressing the mother mold to form a pattern; a curing step of curing the transfer portion by irradiating the transfer portion with light; and a removing step of removing the guide film.
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