TW201801334A - N-type rear emitter bifacial solar cell - Google Patents
N-type rear emitter bifacial solar cell Download PDFInfo
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- TW201801334A TW201801334A TW105119552A TW105119552A TW201801334A TW 201801334 A TW201801334 A TW 201801334A TW 105119552 A TW105119552 A TW 105119552A TW 105119552 A TW105119552 A TW 105119552A TW 201801334 A TW201801334 A TW 201801334A
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- 238000000034 method Methods 0.000 claims description 18
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
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- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
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- KODMFZHGYSZSHL-UHFFFAOYSA-N aluminum bismuth Chemical compound [Al].[Bi] KODMFZHGYSZSHL-UHFFFAOYSA-N 0.000 description 4
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- 239000003292 glue Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
Description
本發明涉及一種n型背面射極型雙面太陽能電池，特別是涉及一種具有多個彼此分離的背面電極的n型背面射極型雙面太陽能電池。 The present invention relates to an n-type back-emitter type double-sided solar cell, and more particularly to an n-type back-emitter type double-sided solar cell having a plurality of back electrodes separated from each other.
目前，市場上現有的太陽能電池產品屬於P型前方接面式太陽能電池(Front junction solar cell)，其以p型矽晶片為基材，並在p型矽晶片的正面以擴散方式形成n型射極，而在背面以整面鋁膠進行燒結，使鋁原子在燒結過程中擴散進入p型矽晶片而形成整面背電場。然而，此種太陽能電池前述整面背電場的設計使得鋁矽界面無法進行良好的鈍化，在做為整面背電場的同時也是載子複合中心，進而限制太陽能電池的整體轉換效率。因此，近年來，已發展出射極鈍化背電極(Passivated Emitter and Rear Cell，PERC)太陽能電池用以增進太陽能電池的轉換效率。PERC太陽能電池的背面增加氧化鋁或氮氧化矽做為鈍化層，且僅以局部開孔的方式通過鋁膠燒結形成局部背面電場。 At present, the existing solar cell products on the market belong to a P-type front junction solar cell, which is based on a p-type germanium wafer and forms an n-type radiation on the front side of the p-type germanium wafer by diffusion. The electrode is sintered on the back side with a full-face aluminum paste, so that the aluminum atoms diffuse into the p-type germanium wafer during sintering to form a full-surface back electric field. However, the design of the above-mentioned full-face back electric field of such a solar cell makes the aluminum germanium interface unable to perform good passivation, and is also a carrier recombination center as a whole surface back electric field, thereby limiting the overall conversion efficiency of the solar cell. Therefore, in recent years, a Passivated Emitter and Rear Cell (PERC) solar cell has been developed to improve the conversion efficiency of a solar cell. The back side of the PERC solar cell is made of aluminum oxide or bismuth oxynitride as a passivation layer, and the local back surface electric field is formed by sintering only the aluminum paste in a partially open manner.
另外，除了前述p型太陽能電池之外，n型太陽能電池由於沒有光衰效應(Light induced degradation，LID)、具有較高使用壽命以及可容許較高製程溫度等優點，亦開始受到重視。在n型太陽能電池中，已進入市場量產的n型雙面太陽能電池(n-type bifacial solar cell)基於其雙面受光的特性，可將整體太陽能電池發電功率增加至20~30%。 In addition, in addition to the aforementioned p-type solar cells, n-type solar cells have begun to receive attention due to their lack of light induced degradation (LID), high lifetime, and high process temperatures. Among the n-type solar cells, the n-type bifacial solar cell that has entered mass production in the market can increase the power generation power of the entire solar cell to 20 to 30% based on the characteristics of the double-sided light receiving.
為結合p型太陽能電池以及n型太陽能電池的優點，已發展出一種n型RJ-PERT(rear junction,passivated emitter rear totally diffused)太陽能電池。n型RJ-PERT太陽能電池無光衰效應、具有背面射極及良好的背面鈍化層，在製程上也有易導入產線、低成本等優點。然而，無論是採用傳統網印製程或是物理氣相沉積等方式形成背面射極，n型RJ-PERT太陽能電池的背面金屬電極皆是以整面覆蓋的方式形成於太陽能電池的背面。因此，在製造n型RJ-PERT太陽能電池的製程中，需耗費大量的金屬膠來形成背面電極。另外，由於整面的金屬背電極會與正面的局部正面電極形成不對稱的結構，使得太陽能電池正反面產生應力差而發生彎曲的現象。再者，n型RJ-PERT太陽能電池背面整面電極使得n型矽晶片的矽原子會移動至以鋁膠製成的電極層中而產生鋁矽合金孔洞，增加太陽能電池的串聯電阻值。 In order to combine the advantages of p-type solar cells and n-type solar cells, an n-type RJ-PERT (rear junction, passedivated emitter rear totally diffused) solar cell has been developed. The n-type RJ-PERT solar cell has no light decay effect, has a backside emitter and a good back passivation layer, and has the advantages of easy introduction into the production line and low cost in the process. However, whether the back surface emitter is formed by a conventional screen printing process or physical vapor deposition, the back metal electrodes of the n-type RJ-PERT solar cell are formed on the back surface of the solar cell by covering the entire surface. Therefore, in the process of manufacturing an n-type RJ-PERT solar cell, a large amount of metal glue is required to form the back electrode. In addition, since the metal back electrode of the entire surface forms an asymmetrical structure with the partial front electrode of the front surface, a phenomenon of bending occurs due to a stress difference between the front and back surfaces of the solar cell. Furthermore, the entire surface electrode of the n-type RJ-PERT solar cell causes the germanium atoms of the n-type germanium wafer to move into the electrode layer made of aluminum paste to generate aluminum-bismuth alloy holes, increasing the series resistance value of the solar cell.
因此，仍有需要提供一種在能有效節省背面電極的金屬膠用量、克服由正反面應力差所導致的彎曲現象，以及降低太陽能電池的串聯電阻值的解決方案。 Therefore, there is still a need to provide a solution for effectively reducing the amount of metal glue used for the back electrode, overcoming the bending phenomenon caused by the stress difference between the front and back surfaces, and reducing the series resistance value of the solar cell.
為了解決上述技術問題，根據本發明之其中一種方案，提供一種n型背面射極型雙面太陽能電池，其包含：一n型矽基板、一n型正面電場層、一p型背面射極層、一正面鈍化層、一背面鈍化層、多個正面電極以及多個背面電極。n型矽基板具有一上表面以及一下表面，而n型正面電場層設置於所述n型矽基板的所述上表面上且p型背面射極層設置於所述n型矽基板的所述下表面上。正面鈍化層設置於所述n型正面電場層的表面上，背面鈍化層設置於所述p型背面射極層的表面上。多個正面電極彼此分離地設置於所述正面鈍化層的表面上，其中多個所述正面電極透過所述正面鈍化層，以與所述n型正面電場層電性連接。多個背面電極彼此分離地設置於所述背面鈍化層的表面上，其中多個所 述背面電極透過所述背面鈍化層，以與所述p型背面射極層電性連接。另外，所述背面鈍化層具有多個開孔，使得多個背面電極通過所述多個開孔與背面射極層電性連接。 In order to solve the above technical problem, according to one aspect of the present invention, an n-type back emitter type double-sided solar cell is provided, comprising: an n-type germanium substrate, an n-type front electric field layer, and a p-type back emitter layer a front passivation layer, a back passivation layer, a plurality of front electrodes, and a plurality of back electrodes. The n-type germanium substrate has an upper surface and a lower surface, and the n-type front electric field layer is disposed on the upper surface of the n-type germanium substrate and the p-type back emitter layer is disposed on the n-type germanium substrate On the lower surface. A front passivation layer is disposed on a surface of the n-type front electric field layer, and a back passivation layer is disposed on a surface of the p-type back emitter layer. A plurality of front electrodes are disposed on the surface of the front passivation layer separately from each other, wherein a plurality of the front electrodes pass through the front passivation layer to be electrically connected to the n-type front electric field layer. a plurality of back electrodes are disposed on the surface of the back passivation layer separately from each other, wherein the plurality of The back electrode passes through the back passivation layer to be electrically connected to the p-type back emitter layer. In addition, the back passivation layer has a plurality of openings such that a plurality of back electrodes are electrically connected to the back emitter layer through the plurality of openings.
本發明的主要技術手段在於，本發明所提供的n型背面射極型雙面太陽能電池的多個背面電極是彼此分離地設置於所述背面鈍化層的表面上，並透過所述背面鈍化層的多個開孔與所述p型背面射極層電性連接。如此一來，本發明所提供的n型背面射極型雙面太陽能電池可達成雙面受光發電的效果，且在形成背面電極時可有效減少金屬膠的用量。另外，現有n型RJ-PERT太陽能電池由於背面的整面電極結構所導致的正反面應力差也可被有效緩解，避免太陽能電池產生彎曲。 The main technical means of the present invention is that the plurality of back electrodes of the n-type back-emitter type double-sided solar cell provided by the present invention are disposed on the surface of the back passivation layer separately from each other and pass through the back passivation layer. A plurality of openings are electrically connected to the p-type back emitter layer. In this way, the n-type back-emitter type double-sided solar cell provided by the invention can achieve the effect of double-sided photo-electric power generation, and can effectively reduce the amount of metal glue when forming the back electrode. In addition, the existing n-type RJ-PERT solar cells can be effectively alleviated due to the difference in the front and back surface stress caused by the entire surface electrode structure on the back surface, thereby avoiding the bending of the solar cell.
再者，由於本發明是採用由多個彼此分離的背面電極所構成的局部式的背面電極結構，背面金屬電極覆蓋面積較現有技術的結構來得小，可減少矽晶片中的矽原子移動至背面電極的數量，藉此加深金屬電極與背面射極接觸處的重摻雜深度，同時減少背面電極的金屬與矽的合金孔洞(例如鋁矽合金孔洞)，進而有效降低太陽能電池的串聯電阻值。 Furthermore, since the present invention employs a partial-type back electrode structure composed of a plurality of back electrodes separated from each other, the back metal electrode covers a smaller area than the prior art structure, and the germanium atoms in the germanium wafer are reduced to the back surface. The number of electrodes is used to deepen the heavily doped depth of the metal electrode in contact with the back emitter, and at the same time reduce the metal hole of the back electrode and the alloy hole of the crucible (for example, an aluminum-bismuth alloy hole), thereby effectively reducing the series resistance of the solar cell.
除此之外，背面電極覆蓋面積較小亦可減少寄生背接點(Parasitic rear contact)發生，進而減少太陽能電池的開路電壓損失。同樣地，前述金屬電極與背面射極接觸處的重摻雜亦可降低金屬電極處的載子複合現象而增加太陽能電池的開路電壓值。 In addition, the smaller back electrode coverage area can also reduce the occurrence of parasitic rear contacts, thereby reducing the open circuit voltage loss of the solar cell. Similarly, the heavy doping at the contact between the metal electrode and the back emitter can also reduce the carrier recombination phenomenon at the metal electrode and increase the open circuit voltage value of the solar cell.
為使能更進一步瞭解本發明的特徵及技術內容，請參閱以下有關本發明的詳細說明與附圖，然而所提供的附圖僅提供參考與說明用，並非用來對本發明加以限制者。 For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.
S‧‧‧雙面太陽能電池 S‧‧‧Double-sided solar cells
1‧‧‧n型矽基板 1‧‧‧n type test substrate
2‧‧‧n型正面電場層 2‧‧‧n type positive electric field layer
3‧‧‧p型背面射極層 3‧‧‧p type back emitter layer
4‧‧‧正面鈍化層 4‧‧‧ Positive passivation layer
5‧‧‧背面鈍化層 5‧‧‧Back passivation layer
50‧‧‧開孔 50‧‧‧opening
6‧‧‧正面電極 6‧‧‧Front electrode
7‧‧‧背面電極 7‧‧‧Back electrode
8‧‧‧p型重摻雜區 8‧‧‧p type heavily doped area
S1‧‧‧上表面 S1‧‧‧ upper surface
S2‧‧‧下表面 S2‧‧‧ lower surface
S100~S108‧‧‧步驟 S100~S108‧‧‧Steps
圖1為本發明實施例所提供的n型背面射極型雙面太陽能電池的剖面示意圖；以及圖2為本發明實施例所提供的n型背面射極型雙面太陽能電池 的製程的流程示意圖。 1 is a schematic cross-sectional view of an n-type back-emitter type double-sided solar cell according to an embodiment of the present invention; and FIG. 2 is an n-type back-emitter type double-sided solar cell according to an embodiment of the present invention. Schematic diagram of the process of the process.
以下是通過特定的具體實例來說明本發明所公開有關“n型背面射極型雙面太陽能電池”的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與功效。本發明可通過其他不同的具體實施例加以施行或應用，本說明書中的各項細節亦可基於不同觀點與應用，在不悖離本發明的精神下進行各種修飾與變更。另外，本發明的附圖僅為簡單示意說明，並非依實際尺寸的描繪，先予敘明。以下的實施方式將進一步詳細說明本發明的相關技術內容，但所公開的內容並非用以限制本發明的技術範疇。 The following is a specific embodiment to illustrate the implementation of the "n-type back-emitter type double-sided solar cell" disclosed in the present invention, and those skilled in the art can understand the advantages and effects of the present invention from the disclosure of the present specification. The present invention can be implemented or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, the drawings of the present invention are merely illustrative and are not intended to be described in terms of actual dimensions. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to limit the technical scope of the present invention.
首先，請參閱圖1。圖1為本發明實施例所提供的n型背面射極型雙面太陽能電池的剖面示意圖。本發明實施例所提供的n型背面射極型雙面太陽能電池S包含n型矽基板1、n型正面電場層2、p型背面射極層3、正面鈍化層4、背面鈍化層5、多個正面電極6以及多個背面電極7。n型矽基板1具有上表面S1及下表面S2。在本發明實施例中，上表面S1的方向定義為n型背面射極型雙面太陽能電池S的正面，而下表面S2的方向定義為n型背面射極型雙面太陽能電池S的背面。由於本發明實施例所提供的n型背面射極型雙面太陽能電池S可雙面受光，其正面與背面皆為受光面。 First, please refer to Figure 1. 1 is a cross-sectional view of an n-type back-emitter type double-sided solar cell according to an embodiment of the present invention. The n-type back emitter type double-sided solar cell S provided by the embodiment of the invention comprises an n-type germanium substrate 1, an n-type front electric field layer 2, a p-type back emitter layer 3, a front passivation layer 4, a back passivation layer 5, A plurality of front electrodes 6 and a plurality of back electrodes 7. The n-type germanium substrate 1 has an upper surface S1 and a lower surface S2. In the embodiment of the present invention, the direction of the upper surface S1 is defined as the front surface of the n-type back emitter type double-sided solar cell S, and the direction of the lower surface S2 is defined as the back surface of the n-type back emitter type double-sided solar cell S. The n-type rear emitter type double-sided solar cell S provided by the embodiment of the present invention can receive light on both sides, and both the front side and the back side are light receiving surfaces.
接下來，請同時參照圖2。圖2為本發明實施例所提供的n型背面射極型雙面太陽能電池的製程的流程示意圖。須注意的是，圖2僅為本發明所提供的n型背面射極型雙面太陽能電池S的其中一製程實例。在實務上，實際的製造流程可根據產品需求及製程的設計加以調整。 Next, please refer to Figure 2 at the same time. FIG. 2 is a schematic flow chart of a process of an n-type back emitter type double-sided solar cell according to an embodiment of the present invention. It should be noted that FIG. 2 is only one example of the process of the n-type back emitter type double-sided solar cell S provided by the present invention. In practice, the actual manufacturing process can be adjusted according to product requirements and process design.
如前所述，n型背面射極型雙面太陽能電池S包含n型正面電場層2，其設置於n型矽基板1的上表面S1上，以及p型背面射 極層3，其設置於n型矽基板1的下表面S2上。如圖2所示，在提供n型矽基板1(步驟S100)後，分別形成n型正面電場層2以及p型背面射極層3(步驟S102)於n型矽基板1的上表面S1及下表面S2上。n型正面電場層2為亦可稱為正表面電場(Front surface field，FSF)，其可利用擴散方式形成於n型矽基板1的上表面S1。藉由擴散方式形成n型正面電場層2後，上表面S1成為n型正面電場層2以及未被摻雜的n型矽基板1的介面。或是，n型正面電場層2是利用常壓式氣相沉積法(Atmospheric pressure chemical vapor deposition，APCVD)或是高溫擴散製程來形成。在另一實施態樣中，n型正面電場層2是利用離子佈植來形成。n型正面電場層2可利用氣體擴散、離子佈植、氣相沉積法或是其他摻雜方式來形成。舉例而言，n型正面電場層2為摻雜磷的電場層。 As described above, the n-type back emitter type double-sided solar cell S includes an n-type front electric field layer 2 which is disposed on the upper surface S1 of the n-type germanium substrate 1, and a p-type back surface shot The pole layer 3 is disposed on the lower surface S2 of the n-type germanium substrate 1. As shown in FIG. 2, after the n-type germanium substrate 1 is provided (step S100), the n-type front electric field layer 2 and the p-type back surface emitter layer 3 are formed (step S102) on the upper surface S1 of the n-type germanium substrate 1 and On the lower surface S2. The n-type front electric field layer 2 is also referred to as a front surface electric field (FSF), and can be formed on the upper surface S1 of the n-type germanium substrate 1 by diffusion. After the n-type front electric field layer 2 is formed by diffusion, the upper surface S1 serves as an interface between the n-type front electric field layer 2 and the undoped n-type germanium substrate 1. Alternatively, the n-type front electric field layer 2 is formed by an atmospheric pressure chemical vapor deposition (APCVD) or a high temperature diffusion process. In another embodiment, the n-type front electric field layer 2 is formed using ion implantation. The n-type front electric field layer 2 can be formed by gas diffusion, ion implantation, vapor deposition, or other doping methods. For example, the n-type front electric field layer 2 is an electric field layer doped with phosphorus.
承上述，如同n型正面電場層2，p型背面射極層3可利用氣體擴散、離子佈植、氣相沉積法或是其他摻雜方式來形成。舉例而言，p型背面射極層3為摻雜硼的射極層。於本發明中，n型正面電場層2以及p型背面射極層3的形成方式不在此限制。 In view of the above, like the n-type front electric field layer 2, the p-type back emitter layer 3 can be formed by gas diffusion, ion implantation, vapor deposition or other doping methods. For example, the p-type back emitter layer 3 is a boron-doped emitter layer. In the present invention, the formation manner of the n-type front electric field layer 2 and the p-type back surface emitter layer 3 is not limited thereto.
接下來，在n型正面電場層2的表面上形成正面鈍化層4，並在p型背面射極層3的表面上形成背面鈍化層5(步驟S104)。在正面及背面上設置鈍化層可以對n型正面電場層2及p型背面射極層3的材料進行鈍化。正面鈍化層4以及背面鈍化層5是由選自於由氮化矽(SiN)、矽氧化物(SiOx)、氮氧化矽(SiON)、氧化鋁(AlOx)、氮化鋁(AlN)及其等的組合所組成之群組的材料所形成。於本發明中，形成正面鈍化層4以及背面鈍化層5的方式並未加以限制。 Next, a front passivation layer 4 is formed on the surface of the n-type front electric field layer 2, and a back passivation layer 5 is formed on the surface of the p-type rear emitter layer 3 (step S104). A passivation layer is provided on the front and back sides to passivate the material of the n-type front electric field layer 2 and the p-type back emitter layer 3. The front passivation layer 4 and the back passivation layer 5 are selected from the group consisting of tantalum nitride (SiN), tantalum oxide (SiO x ), niobium oxynitride (SiON), aluminum oxide (AlO x ), and aluminum nitride (AlN). The material of the group consisting of and combinations thereof is formed. In the present invention, the manner in which the front passivation layer 4 and the back passivation layer 5 are formed is not limited.
請參照圖2，在形成正面鈍化層4及背面鈍化層5後，對背面鈍化層5表面欲形成電極的區域進行背面開孔製程(步驟S106)，以形成多個位於雙面太陽能電池S背面的開孔50。開孔製程的技術手段包括雷射開孔、使用蝕刻膠(etching paste)及形成蝕刻阻擋 層(etching mask)等，然而本發明並不在此限制。如此一來，後續形成的多個背面電極7透過所述多個開孔50與p型背面射極層3電性連接。 Referring to FIG. 2, after the front passivation layer 4 and the back passivation layer 5 are formed, a region of the surface of the back passivation layer 5 on which the electrode is to be formed is subjected to a back opening process (step S106) to form a plurality of surfaces on the back side of the double-sided solar cell S. Opening 50. The technical means of the opening process include laser opening, etching paste and etching barrier An etching mask or the like, however, the invention is not limited thereto. In this way, the plurality of back electrodes 7 formed subsequently are electrically connected to the p-type back emitter layer 3 through the plurality of openings 50 .
接著，在正面鈍化層4的表面以及背面鈍化層5經過開孔製程的位置分別形成多個正面電極6及多個背面電極7(步驟S108)。具體來說，多個正面電極6以及多個背面電極7的形狀可依據實際需求加以調整。舉例而言，多個正面電極6以及多個背面電極7可為柵狀電極結構並具有作為匯流排(Bus bar)的主電極結構及作為指狀電極(Finger)的次電極結構。另外，由於多個背面電極7是透過多個開孔50與p型背面射極層3電性連接，多個背面電極7須至少完全覆蓋在被面鈍化層8表面的開孔50。本發明實施例所提供的n型背面射極型雙面太陽能電池S的多個正面電極6是彼此分離地設置於正面鈍化層4的表面上，且多個正面電極6透過正面鈍化層4與n型正面電場層2電性連接。另外，多個背面電極7是彼此分離地設置於背面鈍化層5的表面上，其中多個背面電極7透過背面鈍化層5的開孔50，以與p型背面射極層2電性連接。具體而言，正面電極6及背面電極7可由金屬膠形成。舉例而言，正面電極7由銀膠所形成，而背面電極7由鋁膠所形成。正面電極6及背面電極7可透過網印、蒸鍍、濺鍍或者電鍍所形成。 Next, a plurality of front electrodes 6 and a plurality of back electrodes 7 are formed on the front surface of the front passivation layer 4 and the back passivation layer 5 through the opening process (step S108). Specifically, the shapes of the plurality of front electrodes 6 and the plurality of back electrodes 7 can be adjusted according to actual needs. For example, the plurality of front electrodes 6 and the plurality of back electrodes 7 may be a grid electrode structure and have a main electrode structure as a bus bar and a sub-electrode structure as a finger electrode. In addition, since the plurality of back electrodes 7 are electrically connected to the p-type rear emitter layer 3 through the plurality of openings 50, the plurality of back electrodes 7 must at least completely cover the openings 50 on the surface of the surface passivation layer 8. The plurality of front electrodes 6 of the n-type back emitter type double-sided solar cell S provided by the embodiments of the present invention are disposed on the surface of the front passivation layer 4 separately from each other, and the plurality of front electrodes 6 are transmitted through the front passivation layer 4 and The n-type front electric field layer 2 is electrically connected. Further, a plurality of back electrodes 7 are provided on the surface of the back passivation layer 5 separately from each other, and a plurality of back electrodes 7 are transmitted through the openings 50 of the back passivation layer 5 to be electrically connected to the p-type back emitter layer 2. Specifically, the front electrode 6 and the back electrode 7 may be formed of a metal paste. For example, the front electrode 7 is formed of silver paste, and the back electrode 7 is formed of aluminum glue. The front electrode 6 and the back electrode 7 can be formed by screen printing, vapor deposition, sputtering, or electroplating.
可以注意到的是，相較於現有的RJ-PERT太陽能電池是將金屬膠整面式的形成於太陽能電池的背面上，本發明實施例所提供的n型背面射極型雙面太陽能電池S的背面電極7是分散地設置於雙面太陽能電池S的背面。換句話說，本發明採用由彼此分離的多個背面電極7所構成的局部式的背面電極結構。藉由採用局部式的背面電極結構，可使本發明的雙面太陽能電池S具有可雙面受光的特性而提升單片雙面太陽能電池S的發電功率。再者，用於形成多個背面電極7的金屬導電漿料的用量可大幅減少。由 於金屬導電漿料佔太陽能電池製程成本的相當大比例，減少金屬導電漿料的用量可大幅降低整體生產成本。 It can be noted that the n-type back-emitter type double-sided solar cell S provided by the embodiment of the present invention is formed on the back surface of the solar cell in comparison with the existing RJ-PERT solar cell. The back surface electrode 7 is dispersedly disposed on the back surface of the double-sided solar cell S. In other words, the present invention employs a partial-type back electrode structure composed of a plurality of back electrodes 7 separated from each other. By using the partial back electrode structure, the double-sided solar cell S of the present invention can have the characteristics of double-sided light receiving, and the power generation of the single-sided double-sided solar cell S can be improved. Further, the amount of the metal conductive paste used to form the plurality of back electrodes 7 can be greatly reduced. by The metal conductive paste accounts for a considerable proportion of the solar cell process cost, and the reduction of the amount of the metal conductive paste can greatly reduce the overall production cost.
更進一步而言，現有RJ-PERT太陽能電池具有局部式的正面電極以及整面式背面電極，因此，太陽能電池正反面會具有應力差而導致太陽能電池發生彎曲。相對地，本發明藉由應用局部式的多個背面電極7，可藉由將多個背面電極7的排列方式及形狀設計成與多個正面電極6的排列方式及形狀接近對稱的型態，進而避免由正反面應力差而導致的彎曲及形變問題。 Furthermore, the conventional RJ-PERT solar cell has a partial front electrode and a full-surface back electrode, and therefore, the front and back surfaces of the solar cell may have a stress difference and cause the solar cell to bend. In contrast, in the present invention, by applying a plurality of partial back electrodes 7 of a partial type, the arrangement and shape of the plurality of back electrodes 7 can be designed to be close to a symmetrical pattern with the arrangement and shape of the plurality of front electrodes 6. Further, the problem of bending and deformation caused by the difference in stress between the front and the back is avoided.
除此之外，p型背面射極層3形成有分別電性連接於多個背面電極7的多個p型重摻雜區8，且多個p型重摻雜區8延伸至n型矽基板1的內部。具體而言，本發明的另一特徵即在於藉由設置局部式的背面電極結構來增加金屬電極與射極接觸處的重摻雜深度，同時減少金屬與矽的合金孔洞。如圖1所示，當背面電極7是鋁電極時，鋁電極透過開孔50與p型背面射極層3接觸的區域會產生較深的重摻雜深度，並減少鋁矽合金的孔洞。相較於現有RJ-PERT太陽能電池使用整面式的背面電極，本發明的多個背面電極7所佔的總面積較小，藉此減少了矽原子移動至鋁電極的數量，並減少鋁矽合金孔洞而有效降低雙面太陽能電池S的串連電阻值。另外，金屬電極與背面射極層3接觸處的重摻雜程度的增加亦可降低金屬電極處的載子複合現象而增加電池元件的開路電壓值。 In addition, the p-type rear emitter layer 3 is formed with a plurality of p-type heavily doped regions 8 electrically connected to the plurality of back electrodes 7, respectively, and the plurality of p-type heavily doped regions 8 extend to the n-type 矽The inside of the substrate 1. In particular, another feature of the present invention is to increase the depth of heavy doping at the contact of the metal electrode with the emitter by providing a localized back electrode structure while reducing the alloy hole of the metal and the crucible. As shown in FIG. 1, when the back electrode 7 is an aluminum electrode, a region where the aluminum electrode contacts the p-type rear emitter layer 3 through the opening 50 generates a deep heavy doping depth and reduces the void of the aluminum-bismuth alloy. Compared with the conventional RJ-PERT solar cell, the entire back surface electrode of the present invention occupies a smaller total area, thereby reducing the number of erbium atoms moving to the aluminum electrode and reducing the aluminum bismuth. The alloy holes effectively reduce the series resistance of the double-sided solar cell S. In addition, an increase in the degree of heavy doping at the contact of the metal electrode with the back emitter layer 3 can also reduce the carrier recombination phenomenon at the metal electrode and increase the open circuit voltage value of the battery element.
採用局部式背面電極結構的另一優點在於，具有較小覆蓋面積的多個背面電極7可以減少寄生背面接點(Parasitic rear contact)的發生而減少電池元件的開路電壓損失。 Another advantage of using a partial back electrode structure is that a plurality of back electrodes 7 having a small coverage area can reduce the occurrence of parasitic rear contacts and reduce the open circuit voltage loss of the battery elements.
另外，除了上述結構外，本發明實施例所提供的n型背面射極型雙面太陽能電池S還進一步包含第一抗反射塗層以及第二抗反射塗層。抗反射塗層以及鈍化層可在相同製程程序中使用不同材料依序形成。當太陽能電池S包含有第一抗反射塗層以及第二 抗反射塗層時，第一抗反射塗層共形地形成於正面鈍化層4上以裸露多個正面電極6，且第二抗反射塗層共形地形成於背面鈍化層5上以裸露多個背面電極7。第一及第二抗反射塗層是用於降低光子的反射量以增加太陽能電池S的效能。或是，藉由選用抗反射塗層的材料，抗反射塗層亦可達到鈍化載子複合區的效果。由於第一抗反射塗層以及第二抗反射塗層是分別共形地形成於正面鈍化層4以及背面鈍化層5上，若圖1所示的太陽能電池S包含第一抗反射塗層及第二抗反射塗層，則第一抗反射塗層與正面鈍化層的共形結構可理解為元件編號4的結構，而第二抗反射塗層與背面鈍化層的共形結構可理解為元件編號5的結構。 In addition, in addition to the above structure, the n-type back emitter type double-sided solar cell S provided by the embodiment of the present invention further includes a first anti-reflective coating and a second anti-reflective coating. The anti-reflective coating and the passivation layer can be formed sequentially using different materials in the same process sequence. When the solar cell S comprises a first anti-reflective coating and a second In the anti-reflective coating, the first anti-reflective coating is conformally formed on the front passivation layer 4 to expose the plurality of front electrodes 6, and the second anti-reflective coating is conformally formed on the back passivation layer 5 to expose more One back electrode 7. The first and second anti-reflective coatings are used to reduce the amount of photon reflection to increase the performance of the solar cell S. Alternatively, the anti-reflective coating can also achieve the effect of passivating the carrier recombination zone by selecting an anti-reflective coating material. Since the first anti-reflective coating and the second anti-reflective coating are respectively conformally formed on the front passivation layer 4 and the back passivation layer 5, the solar cell S shown in FIG. 1 includes the first anti-reflective coating and the first The second anti-reflective coating, the conformal structure of the first anti-reflective coating and the front passivation layer can be understood as the structure of the component number 4, and the conformal structure of the second anti-reflective coating and the back passivation layer can be understood as the component number. The structure of 5.
舉例而言，第一抗反射塗層及第二抗反射塗層可由選自於由下列所組成之群組的材料所形成：氮化矽(silicon nitride)、二氧化鈦(TiO2)、氧化銦錫(ITO)、透明導電氧化物、二氧化矽(SiO2)、氮氧化矽(SiNx：H)及其等的組合。另外，第一及第二抗反射塗層可由，例如，常壓式氣相沉積法、熱氧化法(Thermal oxidation)而形成。然而，用於形成第一及第二抗反射塗層的材料及方法不在此限制。 For example, the first anti-reflective coating and the second anti-reflective coating may be formed of a material selected from the group consisting of silicon nitride, titanium dioxide (TiO 2 ), indium tin oxide. (ITO), a transparent conductive oxide, cerium oxide (SiO 2 ), cerium oxynitride (SiNx: H), and the like. In addition, the first and second anti-reflective coatings may be formed by, for example, atmospheric pressure vapor deposition, thermal oxidation. However, materials and methods for forming the first and second anti-reflective coatings are not limited thereto.
〔實施例的可行功效〕 [Effective effect of the embodiment]
綜上所述，本發明的有益效果在於，本發明實施例所提供的n型背面射極型雙面太陽能電池，其可通過「多個背面電極是彼此分離地設置於所述背面鈍化層的表面上，並透過所述背面鈍化層，以與所述p型背面射極層電性連接」的技術手段，來達成雙面受光發電的效果，且在形成背面電極時可有效減少金屬用膠量。 In summary, the n-type back-emitter type double-sided solar cell provided by the embodiment of the present invention can be provided by "the plurality of back electrodes are disposed apart from each other on the back passivation layer. On the surface, through the back passivation layer, electrically connected to the p-type back emitter layer, the double-sided photo-electric power generation effect is achieved, and the metal paste can be effectively reduced when the back electrode is formed. the amount.
另外，上述局部式的背面電極結構可有效緩解現有n型RJ-PERT太陽能電池由於背面的整面電極結構所導致的正反面應力差，避免太陽能電池產生彎曲。再者，本發明的多個背面電極7的總覆蓋面積較現有技術的結構來得小，因而加深金屬電極與背面射極接觸處的重摻雜深度、減少背面電極的金屬與矽的合金孔 洞，進而有效降低太陽能電池的串聯電阻值。局部式的背面電極結構的設計更可進一步減少寄生背接點(parasitic rear contact)發生，進而減少太陽能電池的開路電壓損失。同樣地，前述金屬電極與背面射極接觸處的重摻雜亦可降低金屬電極處的載子複合現象而增加太陽能電池的開路電壓值。 In addition, the above-mentioned partial back electrode structure can effectively alleviate the difference between the front and back surface stress caused by the entire surface electrode structure of the existing n-type RJ-PERT solar cell, and avoid the bending of the solar cell. Furthermore, the total coverage area of the plurality of back electrodes 7 of the present invention is smaller than that of the prior art structure, thereby deepening the heavily doped depth of the metal electrode in contact with the back emitter and reducing the metal hole of the back electrode and the metal hole of the back electrode. The hole, in turn, effectively reduces the series resistance of the solar cell. The design of the localized back electrode structure further reduces the occurrence of parasitic rear contacts, thereby reducing the open circuit voltage loss of the solar cell. Similarly, the heavy doping at the contact between the metal electrode and the back emitter can also reduce the carrier recombination phenomenon at the metal electrode and increase the open circuit voltage value of the solar cell.
以上所述僅為本發明的較佳可行實施例，非因此侷限本發明的專利範圍，故舉凡運用本發明說明書及附圖內容所做的等效技術變化，均包含於本發明的保護範圍內。 The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, equivalent technical changes made by using the present specification and the contents of the drawings are included in the protection scope of the present invention. .
S‧‧‧雙面太陽能電池 S‧‧‧Double-sided solar cells
1‧‧‧n型矽基板 1‧‧‧n type test substrate
2‧‧‧n型正面電場層 2‧‧‧n type positive electric field layer
3‧‧‧p型背面射極層 3‧‧‧p type back emitter layer
4‧‧‧正面鈍化層 4‧‧‧ Positive passivation layer
5‧‧‧背面鈍化層 5‧‧‧Back passivation layer
50‧‧‧開孔 50‧‧‧opening
6‧‧‧正面電極 6‧‧‧Front electrode
7‧‧‧背面電極 7‧‧‧Back electrode
8‧‧‧p型重摻雜區 8‧‧‧p type heavily doped area
S1‧‧‧上表面 S1‧‧‧ upper surface
S2‧‧‧下表面 S2‧‧‧ lower surface
Claims (10)
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| TW105119552A TWI619260B (en) | 2016-06-22 | 2016-06-22 | N-type rear emitter bifacial solar cell |
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| TW105119552A TWI619260B (en) | 2016-06-22 | 2016-06-22 | N-type rear emitter bifacial solar cell |
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| TWI705572B (en) * | 2019-07-03 | 2020-09-21 | 太極能源科技股份有限公司 | Solar cell having silicon oxynitride passivation layer and method for manufacturing the same |
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| US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
| CN204303826U (en) * | 2014-11-19 | 2015-04-29 | 上海神舟新能源发展有限公司 | A kind of high-efficiency N-type double-side solar cell |
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