TW201806019A - Substrate processing apparatus and substrate processing method - Google Patents
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Abstract
基板處理裝置係包含有:處理腔室;基板保持單元,係配置於前述處理腔室內,用以保持基板;第一噴嘴,係具有用以朝被前述基板保持單元所保持的基板的主面噴出流體之噴出口;第一藥劑流體供給單元,係連接至前述第一噴嘴,且內部具有連通至前述噴出口之藥劑流體配管,用以經由前述藥劑流體配管對前述第一噴嘴供給第一藥劑流體;第一水供給單元,係具有分歧連接至前述藥劑流體配管之水配管,用以經由前述水配管對前述藥劑流體配管供給水;第二藥劑流體供給單元,係用以對被前述基板保持單元所保持的基板的主面供給第二藥劑流體,該第二藥劑流體為與前述第一藥劑流體不同種類的流體;以及控制裝置,係控制前述第一藥劑流體供給單元、前述第二藥劑流體供給單元以及前述第一水供給單元;前述控制裝置係執行:第一處理步驟,係將前述第一藥劑流體供給至前述藥劑流體配管,藉此從前述第一噴嘴朝前述基板的主面噴出前述第一藥劑流體,並對前述基板施予使用了前述第一藥劑流體的處理;第二處理步驟,係將前述第二藥劑流體供給至前述基板的主面,並對前述基板施予使用了前述第二藥劑流體的處理;以及水置換步驟,係在前述第一處理步驟的執行前及/或執行後以及/或者前 述第二處理步驟的執行前及/或執行後,將來自前述第一水供給單元的水供給至前述藥劑流體配管,並以水置換前述藥劑流體配管的內部。 The substrate processing apparatus includes: a processing chamber; a substrate holding unit configured to hold the substrate in the processing chamber; a first nozzle having a main surface for ejecting toward the main surface of the substrate held by the substrate holding unit; A fluid outlet of the fluid; a first medicine fluid supply unit connected to the first nozzle and having a medicine fluid piping connected to the discharge port inside, for supplying the first medicine fluid to the first nozzle through the medicine fluid piping ; The first water supply unit is a water pipe having a branch connection to the medicine fluid pipe to supply water to the medicine fluid pipe through the water pipe; the second medicine fluid supply unit is used to supply the substrate holding unit The main surface of the held substrate supplies a second chemical fluid, which is a fluid different from the first chemical fluid; and a control device that controls the first chemical fluid supply unit and the second chemical fluid supply Unit and the aforementioned first water supply unit; the aforementioned control device performs: a first processing step, The first medicinal fluid is supplied to the medicinal fluid pipe, whereby the first medicinal fluid is ejected from the first nozzle toward the main surface of the substrate, and the substrate is treated with the first medicinal fluid; The second processing step is to supply the second chemical fluid to the main surface of the substrate, and to apply a treatment using the second chemical fluid to the substrate; and the water replacement step is performed before the first processing step is performed. And / or after execution and / or before Before and / or after the execution of the second processing step, water from the first water supply unit is supplied to the medicinal fluid pipe, and the inside of the medicinal fluid pipe is replaced with water.
Description
本發明係關於一種用以使用第一藥劑流體及第二藥劑流體處理基板之基板處理裝置及基板處理方法。前述基板的例子係包括半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、FED(Field Emission Dispyay;場發射顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩(photomask)用基板、陶瓷基板、太陽電池用基板等。 The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a first chemical fluid and a second chemical fluid. Examples of the substrate include a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical magnetic disk, A substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like.
會有於半導體裝置或液晶顯示裝置的製造步驟使用葉片式的基板處理裝置之情形,該葉片式的基板處理裝置係用以逐片處理基板,俾對半導體晶圓或液晶顯示面板用玻璃基板等基板的表面施予藥液所為之處理。葉片式的基板處理裝置係具備有:自轉夾具(spin chuck),係於被隔壁區劃的處理腔室(processing chamber)的內部將基板大致保持成水平並使基板旋轉;第一藥液噴嘴,係對被自轉夾具保持的基板的上表面供給第一藥液;以及第二藥液噴嘴,係對被自轉夾具保持的基板的上表面供給第二藥液。第一藥液噴嘴係具有噴出口,且於第一藥液噴嘴連接有藥液配管,該藥液配管係用以將來自藥液供給源的藥液供給至第一藥液噴嘴。 A blade type substrate processing device may be used in the manufacturing steps of a semiconductor device or a liquid crystal display device. The blade type substrate processing device is used to process a substrate one by one, and is used for a semiconductor wafer or a glass substrate for a liquid crystal display panel. The surface of the substrate is treated with a chemical solution. The blade-type substrate processing apparatus is provided with a spin chuck, which is held inside a processing chamber partitioned by a partition wall to keep the substrate substantially horizontal and rotate the substrate; a first chemical liquid nozzle, A first chemical liquid is supplied to the upper surface of the substrate held by the rotation jig; and a second chemical liquid nozzle is supplied to the upper surface of the substrate held by the rotation jig. The first chemical liquid nozzle has a spray outlet, and a chemical liquid pipe is connected to the first chemical liquid nozzle, and the chemical liquid pipe is used to supply a chemical liquid from a chemical liquid supply source to the first chemical liquid nozzle.
在此種基板處理裝置中,會有第一藥液與第二藥液接 觸而伴隨著危險之組合(亦即不適合接觸之組合)之情形。在一個處理腔室進行使用了此種不適合接觸之組合的藥液之處理之情形中,提案有一種聯鎖(interlock)處理的執行,係以不會在處理腔室的內部接觸之方式,在一方的藥液供給時禁止另一方的藥液用的閥的新開啟,或者在基板的旋轉速度的檢測值變成旋轉數範圍外時禁止藥液用的閥的開啟(參照例如專利文獻1、2)。 In such a substrate processing apparatus, a first chemical solution is connected to a second chemical solution. A situation that is accompanied by a dangerous combination (that is, a combination that is not suitable for exposure). In the case where a treatment chamber uses such a combination of unsuitable chemical liquids for treatment, the proposal proposes the execution of an interlock process in a manner that does not make contact with the inside of the treatment chamber. When one chemical solution is supplied, it is prohibited to newly open the valve for the other chemical solution, or when the detected value of the rotation speed of the substrate is outside the range of the number of rotations, the valve for the chemical solution is prohibited to be opened (see, for example, Patent Documents 1 and 2). ).
[先前技術文獻] [Prior technical literature]
[專利文獻] [Patent Literature]
專利文獻1:日本特許第4917469號公報。 Patent Document 1: Japanese Patent No. 4917469.
專利文獻2:日本特許第4917470號公報。 Patent Document 2: Japanese Patent No. 4917470.
然而,當在使用了第二藥劑流體(第二藥液)的處理中於自轉夾具的周邊配置有第一噴嘴時,會有含有第二藥劑流體之氛圍經由噴出口進入至藥劑流體配管(藥液配管)之虞。含有第二藥劑流體之氛圍進入至藥劑流體配管的內部會成為第一藥劑流體與第二藥劑流體接觸的原因。 However, when the first nozzle is arranged around the rotation jig during processing using the second chemical fluid (second chemical fluid), an atmosphere containing the second chemical fluid enters the chemical fluid pipe (medicine) through the ejection port. Liquid piping). The entry of the atmosphere containing the second medicinal fluid into the inside of the medicinal fluid pipe may cause the first medicinal fluid to contact the second medicinal fluid.
因此,本發明的目的在於提供一種基板處理裝置及基板處理方法,即使使用於基板處理之複數種藥劑流體的組合為不適合接觸之組合,亦能防止在藥劑流體配管的內部中發生這些藥劑流體的接觸,並能在一個處理腔室中完成使用了該複數種藥劑流體之處理。 Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of preventing the occurrence of these chemical fluids in the interior of the chemical fluid piping even if a combination of a plurality of chemical fluids used for substrate processing is a combination that is not suitable for contact. Contact, and can complete the treatment using the plurality of pharmaceutical fluids in a processing chamber.
本發明係提供一種基板處理裝置,係包含有:處理腔室;基板保持單元,係配置於前述處理腔室內,用以保持基板;第一噴嘴,係具有用以朝被前述基板保持單元所保持的基板的主面噴出流體之噴出口;藥劑流體配管,係連接至前述第一噴嘴,且內部連通至前述噴出口;第一藥劑流體供給單元,用以對前述藥劑流體配管供給第一藥劑流體;第一水供給單元,係用以對前述藥劑流體配管供給水;第二藥劑流體供給單元,係用以對被前述基板保持單元所保持的基板的主面供給第二藥劑流體,該第二藥劑流體為與前述第一藥劑流體不同種類的流體;以及控制裝置,係控制前述第一藥劑流體供給單元、前述第二藥劑流體供給單元以及前述第一水供給單元;前述控制裝置係執行:第一處理步驟,係將前述第一藥劑流體供給至前述藥劑流體配管,藉此從前述第一噴嘴朝前述基板的主面噴出前述第一藥劑流體,並對前述基板施予使用了前述第一藥劑流體的處理;第二處理步驟,係將前述第二藥劑流體供給至前述基板的主面,並對前述基板施予使用了前述第二藥劑流體的處理;以及水置換步驟,係在前述第一處理步驟的執行前及/或執行後以及/或者前述第二處理步驟的執行前及/或執行後,將來自前述第一水供給單元的水供給至前述藥劑流體配管,並以前述水置換前述藥劑流體配管的內部。 The present invention provides a substrate processing apparatus including: a processing chamber; a substrate holding unit configured to hold the substrate in the processing chamber; and a first nozzle having a structure to be held toward the substrate holding unit. The main surface of the substrate is a nozzle for ejecting fluid; a medicament fluid pipe is connected to the first nozzle and is internally connected to the ejection outlet; a first medicinal fluid supply unit is configured to supply the first medicinal fluid to the medicinal fluid pipe A first water supply unit for supplying water to the medicine fluid piping; a second medicine fluid supply unit for supplying a second medicine fluid to the main surface of the substrate held by the substrate holding unit, the second The medicinal fluid is a fluid different from the first medicinal fluid; and a control device that controls the first medicinal fluid supply unit, the second medicinal fluid supply unit, and the first water supply unit; the control device executes: A processing step is to supply the first medicinal fluid to the medicinal fluid piping, thereby The nozzle ejects the first chemical fluid toward the main surface of the substrate, and applies a treatment using the first chemical fluid to the substrate. The second processing step is to supply the second chemical fluid to the main surface of the substrate. And applying a treatment using the second chemical fluid to the substrate; and a water replacement step before and / or after the execution of the first processing step and / or before and / or the execution of the second processing step After the execution, water from the first water supply unit is supplied to the medicine fluid pipe, and the inside of the medicine fluid pipe is replaced with the water.
依據此構成,在共通的處理腔室內執行使用第一藥劑流體之第一處理步驟以及使用第二藥劑流體之第二藥液供給步驟。在第一處理步驟中,將第一藥劑流體供給至藥劑 流體配管,藉此從第一噴嘴朝基板的主面噴出第一藥劑流體。 According to this configuration, the first processing step using the first chemical fluid and the second chemical liquid supplying step using the second chemical fluid are performed in a common processing chamber. In a first processing step, a first medicament fluid is supplied to the medicament The fluid pipe discharges the first medical fluid from the first nozzle toward the main surface of the substrate.
此外,在第一處理步驟的執行前及/或執行後以及/或者前述第二處理步驟的執行前及/或執行後,執行用以以水置換藥劑流體配管的內部之水置換步驟。 In addition, before and / or after execution of the first processing step and / or before and / or after execution of the aforementioned second processing step, a water replacement step is performed to replace the inside of the pharmaceutical fluid pipe with water.
有於第一處理步驟結束後及/或第二處理步驟開始前在藥劑流體配管的內部殘留有第一藥劑流體之情形。在此情形中,在第一處理步驟結束後及/或第二處理步驟開始前以水置換藥劑流體配管的內部,藉此能從藥劑流體配管去除第一藥劑流體。因此,在第二處理步驟開始時不會於藥劑流體配管的內部殘留第一藥劑流體。因此,即使在該第二處理步驟中第二藥劑流體進入至藥劑流體配管內,該第二藥劑流體亦不會與第一藥劑流體接觸。藉此,能防止藥劑流體配管的內部中的第一藥劑流體與第二藥劑流體接觸。 In some cases, the first chemical fluid may remain inside the chemical fluid piping after the first processing step is completed and / or before the second processing step is started. In this case, the first medicinal fluid can be removed from the medicinal fluid piping by replacing the inside of the medicinal fluid piping with water after the end of the first processing step and / or before the start of the second processing step. Therefore, the first medical fluid does not remain inside the medical fluid piping at the beginning of the second processing step. Therefore, even if the second medical fluid enters the medical fluid pipe in the second processing step, the second medical fluid does not come into contact with the first medical fluid. Thereby, it is possible to prevent the first medicine fluid from coming into contact with the second medicine fluid in the inside of the medicine fluid pipe.
此外,有在第一處理步驟開始前及/或第二處理步驟結束後於藥劑流體配管的內部附著有第二藥劑流體之情形。在此情形中,在第一處理步驟開始前及/或第二處理步驟結束後以水置換藥劑流體配管的內部,藉此能從藥劑流體配管去除第二藥劑流體。因此,在第一處理步驟開始時不會於藥劑流體配管的內部殘留第二藥劑流體。因此,即使在該第一處理步驟中第一藥劑流體被供給至藥劑流體配管內,該第一藥劑流體亦不會與第二藥劑流體接觸。藉此,能防止藥劑流體配管的內部中的第一藥劑流體與第二藥劑 流體接觸。 In addition, the second medical fluid may be attached to the inside of the medical fluid piping before the first processing step starts and / or after the second processing step ends. In this case, before the first processing step is started and / or after the second processing step is finished, the inside of the medicinal fluid pipe is replaced with water, whereby the second medicinal fluid can be removed from the medicinal fluid pipe. Therefore, the second medicinal fluid does not remain inside the medicinal fluid piping at the beginning of the first processing step. Therefore, even if the first medicinal fluid is supplied into the medicinal fluid pipe in the first processing step, the first medicinal fluid does not come into contact with the second medicinal fluid. Thereby, the first medicine fluid and the second medicine in the medicine fluid piping can be prevented. Fluid contact.
如上所述,本發明能提供一種基板處理裝置,即使使用於基板處理之複數種藥劑流體(第一藥劑流體及第二藥劑流體)的組合為不適合接觸之組合,亦能防止在藥劑流體配管的內部中發生這些藥劑流體的接觸,並能在一個處理腔室中完成使用了該複數種藥劑流體之處理。 As described above, the present invention can provide a substrate processing apparatus, which can prevent the problem of The contact of these pharmaceutical fluids occurs in the interior, and the processing using the plurality of pharmaceutical fluids can be completed in one processing chamber.
此外,在本說明書中,所謂「不適合接觸之組合」不只是指「接觸而伴隨著危險之組合」,亦包含了「藉由接觸生成生成物之組合」的含意。於「藉由接觸生成生成物之組合」亦包含了酸與鹼之組合。 In addition, in this specification, "a combination that is not suitable for contact" means not only "a combination that is accompanied by danger", but also means "a combination that produces a product by contact". "Combination of products formed by contact" also includes a combination of acid and base.
在本發明的實施形態之一中,進一步具備有:對向構件,係具有與被前述基板保持單元所保持之基板的主面相對向之基板對向面;前述第一噴嘴的前述噴出口係於前述基板對向面呈開口。 In one embodiment of the present invention, it further includes a facing member having a substrate facing surface facing the main surface of the substrate held by the substrate holding unit, and the ejection port system of the first nozzle. An opening is formed on the opposite surface of the substrate.
依據此構成,設置有與基板的主面相對向之對向構件,且第一噴嘴的噴出口係於對向構件的基板對向面呈開口。因此,在第二處理步驟中,有隨著第二藥劑流體供給至基板的主面而使第二藥劑流體從噴出口進入至藥劑流體配管的內部之虞。含有第二藥劑流體之氛圍進入至藥劑流體配管的內部會成為第一藥劑流體與第二藥劑流體接觸的原因。 According to this configuration, a facing member facing the main surface of the substrate is provided, and the ejection port of the first nozzle is opened at the substrate facing surface of the facing member. Therefore, in the second processing step, the second chemical fluid may enter the inside of the chemical fluid pipe from the ejection port as the second chemical fluid is supplied to the main surface of the substrate. The entry of the atmosphere containing the second medicinal fluid into the inside of the medicinal fluid pipe may cause the first medicinal fluid to contact the second medicinal fluid.
然而,在第一處理步驟執行前及/或執行後以及/或者前述第二處理步驟執行前及/或執行後以水置換藥劑流體配管的內部。因此,即使在設置有與基板的主面相對向 之對向構件且第一噴嘴的噴出口於該對向構件的基板對向面呈開口之情形中,亦能防止藥劑流體配管的內部中的第一藥劑流體與第二藥劑流體接觸。 However, before the execution of the first processing step and / or after the execution and / or before the execution of the second processing step, the inside of the medicine fluid pipe is replaced with water. Therefore, even if it is disposed facing the main surface of the substrate, In the case where the opposing member and the ejection opening of the first nozzle are opened on the opposing surface of the substrate of the opposing member, it is possible to prevent the first medicine fluid from contacting the second medicine fluid in the inside of the medicine fluid pipe.
此外,前述基板處理裝置亦可進一步包含有:吸引單元,係用以吸引前述藥劑流體配管的內部。前述控制裝置亦可進一步控制前述吸引單元,並在前述水置換步驟結束後進一步執行用以吸引前述藥劑流體配管的內部之第一吸引步驟。 In addition, the substrate processing apparatus may further include: a suction unit for sucking the inside of the medicine fluid pipe. The control device may further control the suction unit, and further perform a first suction step for suctioning the inside of the medicine fluid pipe after the water replacement step is completed.
依據此構成,在水置換步驟結束後吸引藥劑流體配管的內部。藉由該吸引從藥劑流體配管的內部去除水,在吸引後不會於藥劑流體配管的內部殘存水,或者殘存於藥劑流體配管的內部之水的量少。藉此,能抑制或防止在水置換步驟結束後水從第一噴嘴落液,因此能抑制或防止基板的主面的微粒(particle)污染。 According to this configuration, the inside of the medicine fluid pipe is sucked after the completion of the water replacement step. Water is removed from the inside of the medicine fluid pipe by this suction, and after the suction, no water remains in the inside of the medicine fluid pipe, or the amount of water remaining inside the medicine fluid pipe is small. Thereby, it is possible to suppress or prevent water from falling from the first nozzle after the completion of the water replacement step, and thus it is possible to suppress or prevent particle contamination of the main surface of the substrate.
前述控制裝置亦可在前述第二處理步驟結束後開始前述第一處理步驟。前述控制裝置亦可執行在前述第二處理步驟之前所執行的第一水置換步驟作為前述水置換步驟。 The control device may also start the first processing step after the second processing step ends. The control device may also execute a first water replacement step performed before the second processing step as the water replacement step.
依據此構成,在第二處理步驟之前執行第一水置換步驟。有於第二處理步驟開始前在前次處理所使用的第一藥劑流體殘存於藥劑流體配管的內部之虞。然而,在第二處理步驟之前以水置換藥劑流體配管的內部,藉此於第二處理步驟開始時不會於藥劑流體配管的內部殘留第一藥劑流體。因此,即使在該第二處理步驟中第二藥劑流體進入至藥劑流體配管內,亦不會在藥劑流體配管的內部與第一藥 劑流體接觸。藉此,能防止在第二處理步驟中藥劑流體配管的內部中的第一藥劑流體與第二藥劑流體接觸。 According to this configuration, the first water replacement step is performed before the second processing step. There is a possibility that the first chemical fluid used in the previous process before the second processing step starts may remain inside the chemical fluid pipe. However, the inside of the medicinal fluid pipe is replaced with water before the second processing step, so that the first medicinal fluid does not remain inside the medicinal fluid pipe at the beginning of the second processing step. Therefore, even if the second medical fluid enters the medical fluid piping in the second processing step, the second medical fluid does not interact with the first medical fluid inside the medical fluid piping. Agent fluid contact. Thereby, it is possible to prevent the first chemical fluid from coming into contact with the second chemical fluid in the interior of the chemical fluid pipe in the second processing step.
此外,前述控制裝置亦可於前述第二處理步驟結束後開始前述第一處理步驟。前述控制裝置亦可執行在前述第二處理步驟之後且在前述第一處理步驟之前所執行的第二水置換步驟作為前述水置換步驟。 In addition, the control device may also start the first processing step after the second processing step ends. The control device may also execute a second water replacement step performed after the second processing step and before the first processing step as the water replacement step.
依據此構成,在第二處理步驟之後且在第一處理步驟之前執行第二水置換步驟。於第二處理步驟結束後且在第一處理步驟開始前,有在第二處理步驟所使用的第二藥劑流體進入至藥劑流體配管內並殘存於該藥劑流體配管的內部之虞。然而,在第一處理步驟之前以水置換藥劑流體配管的內部,藉此於第一處理步驟開始時不會於藥劑流體配管的內部殘留第二藥劑流體。因此,即使在該第一處理步驟中對藥劑流體配管供給第一藥劑流體,亦不會與第二藥劑流體接觸。藉此,能防止在第一處理步驟中藥劑流體配管的內部中第一藥劑流體與第二藥劑流體接觸。 According to this configuration, the second water replacement step is performed after the second processing step and before the first processing step. After the second processing step ends and before the first processing step starts, there is a possibility that the second medical fluid used in the second processing step may enter the medical fluid piping and remain inside the medical fluid piping. However, the inside of the medicinal fluid pipe is replaced with water before the first processing step, so that the second medicinal fluid does not remain inside the medicinal fluid pipe at the beginning of the first processing step. Therefore, even if the first medical fluid is supplied to the medical fluid piping in this first processing step, it will not come into contact with the second medical fluid. This can prevent the first chemical fluid from coming into contact with the second chemical fluid in the interior of the chemical fluid pipe in the first processing step.
此外,前述控制裝置亦可在前述第一處理步驟之前進一步執行用以對前述基板的主面供給水之第一水供給步驟,俾在前述第二處理步驟之後從前述基板的主面以水沖洗前述第二藥劑流體。前述控制裝置亦可在前述第一水供給步驟中執行前述第二水置換步驟。 In addition, the control device may further perform a first water supply step for supplying water to the main surface of the substrate before the first processing step, and rinse the water from the main surface of the substrate after the second processing step The aforementioned second medicinal fluid. The control device may also perform the second water replacement step in the first water supply step.
依據此構成,與用以在第二處理步驟之後從基板的主面以水沖洗第二藥劑流體之第一水供給步驟並行地執行用以以水置換藥劑流體配管的內部之第二水置換步驟。藉此, 與以與第二水置換步驟配合的時序進行第一水供給步驟之情形相比,能縮短整體的處理時間。 According to this configuration, in parallel with the first water supply step for flushing the second medical fluid with water from the main surface of the substrate after the second processing step, the second water replacement step for replacing the inside of the medical fluid pipe with water is performed in parallel. . With this, Compared with the case where the first water supply step is performed at a timing coordinated with the second water replacement step, the overall processing time can be shortened.
此外,前述基板處理裝置亦可進一步具備有:第二噴嘴,係與前述第一噴嘴為不同的噴嘴,用以朝被前述基板保持單元所保持的基板的主面噴出流體;以及第二水供給單元,係用以對前述第二噴嘴供給水。前述控制裝置亦可進一步控制前述第二水供給單元。前述控制裝置亦可在前述第二處理步驟結束後開始前述第一處理步驟,並在前述第二處理步驟之後且在前述第一處理步驟開始之前執行第二水供給步驟,該第二水供給步驟係對前述第二噴嘴供給水,藉此從前述第二噴嘴朝前述基板的主面開始噴出水。前述控制裝置亦可在前述第二水供給步驟結束之前開始朝前述第一處理步驟中的前述藥劑流體配管供給前述第一藥劑流體。 In addition, the substrate processing apparatus may further include: a second nozzle, which is a nozzle different from the first nozzle, for ejecting a fluid toward a main surface of the substrate held by the substrate holding unit; and a second water supply. The unit is used to supply water to the second nozzle. The control device may further control the second water supply unit. The control device may also start the first processing step after the end of the second processing step, and execute the second water supply step after the second processing step and before the start of the first processing step. By supplying water to the second nozzle, water is sprayed from the second nozzle toward the main surface of the substrate. The control device may start supplying the first medical fluid to the medical fluid piping in the first processing step before the second water supply step ends.
依據此構成,能在第二水供給結束後立即從噴出口噴出第一藥劑流體。亦即,能在第二水供給步驟結束後立即開始第一處理步驟。藉此,能縮短整體的處理時間。 According to this configuration, the first chemical fluid can be ejected from the ejection port immediately after the second water supply is completed. That is, the first processing step can be started immediately after the end of the second water supply step. This can shorten the overall processing time.
此外,前述控制裝置亦可在前述第二水供給步驟結束之前開始前述第一處理步驟。 In addition, the control device may start the first processing step before the second water supply step ends.
依據此構成,能從第二水供給步驟結束前從噴出口噴出第一藥劑流體。藉此,能進一步縮短整體的處理時間。 According to this configuration, the first chemical fluid can be ejected from the ejection port before the end of the second water supply step. This can further shorten the overall processing time.
此外,前述控制裝置亦可進一步在前述第一處理步驟中之來自前述第一噴嘴的第一藥劑流體的噴出結束後執行用以吸引前述藥劑流體配管的內部之第二吸引步驟。 In addition, the control device may further perform a second suction step for suctioning the inside of the medicament fluid pipe after the ejection of the first medicament fluid from the first nozzle in the first processing step.
此外,前述洗淨液亦可包含有碳酸水。 In addition, the cleaning solution may include carbonated water.
此外,前述第一藥劑流體亦可包含有硫酸含有液,前述第二藥劑流體亦可包含有有機溶劑。 In addition, the first chemical fluid may include a sulfuric acid-containing liquid, and the second chemical fluid may also include an organic solvent.
本發明係提供一種基板處理方法,係包含有:基板保持步驟,係在處理腔室內保持基板;第一處理步驟,係將第一藥劑流體供給至連接至第一噴嘴的藥劑流體配管,藉此從前述第一噴嘴朝前述基板的主面噴出前述第一藥劑流體,並對前述基板施予使用了前述第一藥劑流體的處理;第二處理步驟,係將與前述第一藥劑流體不同種類的流體之第二藥劑流體供給至前述基板的主面,並對前述基板施予使用了前述第二藥劑流體的處理;以及水置換步驟,係在前述第一處理步驟執行前及/或執行後以及/或者前述第二處理步驟執行前及/或執行後將來自前述第一水供給單元的水供給至前述藥劑流體配管,並以前述水置換前述藥劑流體配管的內部。 The present invention provides a substrate processing method including: a substrate holding step for holding a substrate in a processing chamber; and a first processing step for supplying a first medical fluid to a medical fluid pipe connected to a first nozzle, whereby The first chemical fluid is ejected from the first nozzle toward the main surface of the substrate, and a treatment using the first chemical fluid is applied to the substrate. The second processing step is to use a different type of fluid than the first chemical fluid. The fluid second chemical fluid is supplied to the main surface of the substrate, and the substrate is treated with the second chemical fluid; and the water replacement step is performed before and / or after the first processing step is performed, and The water from the first water supply unit is supplied to the medicinal fluid pipe before and / or after the second processing step is performed, and the inside of the medicinal fluid pipe is replaced with the water.
依據此方法,在共通的處理腔室內執行使用第一藥劑流體之第一處理步驟以及使用第二藥劑流體之第二藥液供給步驟。在第一處理步驟中,將第一藥劑流體供給至藥劑流體配管,藉此從第一噴嘴朝基板的主面噴出第一藥劑流體。 According to this method, a first processing step using a first chemical fluid and a second chemical liquid supplying step using a second chemical fluid are performed in a common processing chamber. In the first processing step, the first medical fluid is supplied to the medical fluid piping, whereby the first medical fluid is ejected from the first nozzle toward the main surface of the substrate.
此外,在第一處理步驟的執行前及/或執行後以及/或者前述第二處理步驟的執行前及/或執行後執行用以以水置換藥劑流體配管的內部之水置換步驟。 In addition, the water replacement step for replacing the inside of the medicine fluid pipe with water is performed before and / or after execution of the first processing step and / or before and / or after execution of the aforementioned second processing step.
有於第一處理步驟結束後及/或第二處理步驟開始前 在藥劑流體配管的內部殘留有第一藥劑流體之情形。在此情形中,在第一處理步驟結束後及/或第二處理步驟開始前以水置換藥劑流體配管的內部,藉此能從藥劑流體配管去除第一藥劑流體。因此,在第二處理步驟開始時不會於藥劑流體配管的內部殘留第一藥劑流體。因此,即使在該第二處理步驟中第二藥劑流體進入至藥劑流體配管內,該第二藥劑流體亦不會與第一藥劑流體接觸。藉此,能防止藥劑流體配管的內部中的第一藥劑流體與第二藥劑流體接觸。 After the end of the first processing step and / or before the start of the second processing step The first medicine fluid may remain in the medicine fluid piping. In this case, the first medicinal fluid can be removed from the medicinal fluid piping by replacing the inside of the medicinal fluid piping with water after the end of the first processing step and / or before the start of the second processing step. Therefore, the first medical fluid does not remain inside the medical fluid piping at the beginning of the second processing step. Therefore, even if the second medical fluid enters the medical fluid pipe in the second processing step, the second medical fluid does not come into contact with the first medical fluid. Thereby, it is possible to prevent the first medicine fluid from coming into contact with the second medicine fluid in the inside of the medicine fluid pipe.
此外,有在第一處理步驟開始前及/或第二處理步驟結束後於藥劑流體配管的內部附著有第二藥劑流體之情形。在此情形中,在第一處理步驟開始前及/或第二處理步驟結束後以水置換藥劑流體配管的內部,藉此能從藥劑流體配管去除第二藥劑流體。因此,在第一處理步驟開始時不會於藥劑流體配管的內部殘留第二藥劑流體。因此,即使在該第一處理步驟中第一藥劑流體被供給至藥劑流體配管內,該第一藥劑流體亦不會與第二藥劑流體接觸。藉此,能防止藥劑流體配管的內部中的第一藥劑流體與第二藥劑流體接觸。 In addition, the second medical fluid may be attached to the inside of the medical fluid piping before the first processing step starts and / or after the second processing step ends. In this case, before the first processing step is started and / or after the second processing step is finished, the inside of the medicinal fluid pipe is replaced with water, whereby the second medicinal fluid can be removed from the medicinal fluid pipe. Therefore, the second medicinal fluid does not remain inside the medicinal fluid piping at the beginning of the first processing step. Therefore, even if the first medicinal fluid is supplied into the medicinal fluid pipe in the first processing step, the first medicinal fluid does not come into contact with the second medicinal fluid. Thereby, it is possible to prevent the first medicine fluid from coming into contact with the second medicine fluid in the inside of the medicine fluid pipe.
如上所述,本發明能提供一種基板處理方法,即使使用於基板處理之複數種藥劑流體(第一藥劑流體及第二藥劑流體)的組合為不適合接觸之組合,亦能防止在藥劑流體配管的內部中發生這些藥劑流體的接觸,並能在一個處理腔室中完成使用了該複數種藥劑流體之處理。 As described above, the present invention can provide a substrate processing method, which can prevent the chemical fluid piping from being used even if the combination of a plurality of chemical fluids (the first chemical fluid and the second chemical fluid) used in the substrate processing is not suitable for contact. The contact of these pharmaceutical fluids occurs in the interior, and the processing using the plurality of pharmaceutical fluids can be completed in one processing chamber.
此外,在本說明書中,所謂「不適合接觸之組合」不只是指「接觸而伴隨著危險之組合」,亦包含了「藉由接觸生成生成物之組合」的含意。於「藉由接觸生成生成物之組合」亦包含了酸與鹼之組合。 In addition, in this specification, "a combination that is not suitable for contact" means not only "a combination that is accompanied by danger", but also means "a combination that produces a product by contact". "Combination of products formed by contact" also includes a combination of acid and base.
在本發明的實施形態之一中,前述基板處理方法係進一步包含有在前述水置換步驟結束後用以吸引前述藥劑流體配管的內部之第一吸引步驟。 In one embodiment of the present invention, the substrate processing method further includes a first suction step for suctioning the inside of the medicine fluid pipe after the water replacement step is completed.
依據此方法,在水置換步驟結束後吸引藥劑流體配管的內部。藉由該吸引從藥劑流體配管的內部去除水,在吸引後不會於藥劑流體配管的內部殘存水,或者殘存於藥劑流體配管的內部之水的量少。藉此,能抑制或防止在水置換步驟結束後水從第一噴嘴落液,因此能抑制或防止基板的主面的微粒污染。 According to this method, the inside of the medicament fluid pipe is sucked after the water replacement step is completed. Water is removed from the inside of the medicine fluid pipe by this suction, and after the suction, no water remains in the inside of the medicine fluid pipe, or the amount of water remaining in the inside of the medicine fluid pipe is small. Thereby, it is possible to suppress or prevent water from falling from the first nozzle after the completion of the water replacement step, and thus it is possible to suppress or prevent particulate contamination of the main surface of the substrate.
此外,前述第一處理步驟亦可包含有在前述第二處理步驟結束後開始之步驟。前述水置換步驟亦可包含有在前述第二處理步驟之前所執行的第一水置換步驟。 In addition, the first processing step may include a step that starts after the second processing step ends. The water replacement step may include a first water replacement step performed before the second processing step.
依據此方法,在第二處理步驟之前執行第一水置換步驟。有於第二處理步驟開始前在前次處理所使用的第一藥劑流體殘存於藥劑流體配管的內部之虞。然而,在第二處理步驟之前以水置換藥劑流體配管的內部,藉此於第二處理步驟開始時不會於藥劑流體配管的內部殘留第一藥劑流體。因此,即使在該第二處理步驟中第二藥劑流體進入至藥劑流體配管內,亦不會在藥劑流體配管的內部與第一藥劑流體接觸。藉此,能防止在第二處理步驟中藥劑流體配 管的內部中的第一藥劑流體與第二藥劑流體接觸。 According to this method, the first water replacement step is performed before the second processing step. There is a possibility that the first chemical fluid used in the previous process before the second processing step starts may remain inside the chemical fluid pipe. However, the inside of the medicinal fluid pipe is replaced with water before the second processing step, so that the first medicinal fluid does not remain inside the medicinal fluid pipe at the beginning of the second processing step. Therefore, even if the second medicinal fluid enters the medicinal fluid pipe in this second processing step, the first medicinal fluid does not come into contact with the inside of the medicinal fluid pipe. Thereby, the medicine fluid can be prevented from being dispensed in the second processing step. The first medicament fluid in the interior of the tube is in contact with the second medicament fluid.
此外,前述第一處理步驟亦可包含有於前述第二處理步驟結束後開始之步驟。前述水置換步驟亦可包含有在前述第二處理步驟之後且在前述第一處理步驟之前所執行的第二水置換步驟。 In addition, the first processing step may include a step that starts after the second processing step ends. The water replacement step may include a second water replacement step performed after the second processing step and before the first processing step.
依據此方法,在第二處理步驟之後且在第一處理步驟之前執行第二水置換步驟。於第二處理步驟結束後且在第一處理步驟開始前,有在第二處理步驟所使用的第二藥劑流體進入至藥劑流體配管內並殘存於該藥劑流體配管的內部之虞。然而,在第一處理步驟之前以水置換藥劑流體配管的內部,藉此於第一處理步驟開始時不會於藥劑流體配管的內部殘留第二藥劑流體。因此,即使在該第一處理步驟中對藥劑流體配管供給第一藥劑流體,亦不會與第二藥劑流體接觸。藉此,能防止在第一處理步驟中藥劑流體配管的內部中第一藥劑流體與第二藥劑流體接觸。 According to this method, a second water replacement step is performed after the second processing step and before the first processing step. After the second processing step ends and before the first processing step starts, there is a possibility that the second medical fluid used in the second processing step may enter the medical fluid piping and remain inside the medical fluid piping. However, the inside of the medicinal fluid pipe is replaced with water before the first processing step, so that the second medicinal fluid does not remain inside the medicinal fluid pipe at the beginning of the first processing step. Therefore, even if the first medical fluid is supplied to the medical fluid piping in this first processing step, it will not come into contact with the second medical fluid. This can prevent the first chemical fluid from coming into contact with the second chemical fluid in the interior of the chemical fluid pipe in the first processing step.
此外,前述基板處理方法亦可在前述第一處理步驟之前進一步包含有用以對前述基板的主面供給水之第一水供給步驟,俾在前述第二處理步驟之後從前述基板的主面以水沖洗前述第二藥劑流體。前述第一水供給步驟亦可包含有前述第二水置換步驟。 In addition, the substrate processing method may further include a first water supplying step for supplying water to a main surface of the substrate before the first processing step, and water may be supplied from the main surface of the substrate after the second processing step. Rinse the aforementioned second medicinal fluid. The first water supply step may include the second water replacement step.
依據此方法,與用以在第二處理步驟之後從基板的主面以水沖洗第二藥劑流體之第一水供給步驟並行地執行用以以水置換藥劑流體配管的內部之第二水置換步驟。藉此,與以與第二水置換步驟配合的時序進行第一水供給步驟之 情形相比,能縮短整體的處理時間。 According to this method, in parallel with the first water supply step for flushing the second medical fluid with water from the main surface of the substrate after the second processing step, the second water replacement step for replacing the inside of the medical fluid pipe with water is performed. . Thereby, the timing of the first water supply step is performed in accordance with the timing matched with the second water replacement step Compared with the situation, the overall processing time can be shortened.
此外,前述第一處理步驟亦可包含有在前述第二處理步驟結束後開始之步驟。前述基板處理方法亦可在前述第二處理步驟之後且在前述第一處理步驟開始之前進一步包含有第二水供給步驟,該第二水供給步驟係從與前述第一噴嘴不同的噴嘴之第二噴嘴朝前述基板的主面噴出水。前述第一處理步驟亦可在前述第二水供給步驟結束之前開始執行朝前述藥劑流體配管供給前述第一藥劑流體。 In addition, the first processing step may include a step that starts after the second processing step ends. The substrate processing method may further include a second water supply step after the second processing step and before the start of the first processing step. The second water supply step is from a second nozzle different from the first nozzle. The nozzle sprays water toward the main surface of the substrate. The first processing step may start to supply the first medical fluid to the medical fluid pipe before the second water supply step ends.
依據此方法,能在第二水供給步驟結束後立即從噴出口噴出第一藥劑流體。亦即,能在第二水供給步驟結束後立即開始第一處理步驟。藉此,能縮短整體的處理時間。 According to this method, the first medical fluid can be ejected from the ejection port immediately after the second water supply step is completed. That is, the first processing step can be started immediately after the end of the second water supply step. This can shorten the overall processing time.
此外,前述基板處理方法亦可在前述第二處理步驟之後進一步包含有用以從前述第二噴嘴將水供給至前述基板的主面之第二水供給步驟。前述基板處理方法亦可與前述第二水供給步驟並行地執行前述第一處理步驟。 In addition, the substrate processing method may further include a second water supply step for supplying water from the second nozzle to a main surface of the substrate after the second processing step. The substrate processing method may also execute the first processing step in parallel with the second water supply step.
依據此方法,能從第二水供給步驟結束前從噴出口噴出第一藥劑流體。藉此,能進一步縮短整體的處理時間。 According to this method, the first medical fluid can be ejected from the ejection port before the end of the second water supply step. This can further shorten the overall processing time.
此外,前述基板處理方法亦可進一步在前述第一處理步驟中之來自前述第一噴嘴的第一藥劑流體的噴出結束後執行用以吸引前述藥劑流體配管的內部之第二吸引步驟。 In addition, the substrate processing method may further perform a second suction step for suctioning the inside of the medicine fluid pipe after the first medicine fluid from the first nozzle is discharged in the first processing step.
此外,前述洗淨液亦可包含有碳酸水。 In addition, the cleaning solution may include carbonated water.
此外,前述第一藥劑流體亦可包含有硫酸含有液,前述第二藥劑流體亦可包含有有機溶劑。 In addition, the first chemical fluid may include a sulfuric acid-containing liquid, and the second chemical fluid may also include an organic solvent.
本發明的上述目的、特徵及功效以及其他的目的、特徵 及功效能藉由參照圖式以及下述的實施形態的說明而明瞭。 The above-mentioned objects, features, and effects of the present invention and other objects, features The effect and effect can be made clear by referring to the drawings and the following description of the embodiment.
1‧‧‧基板處理裝置 1‧‧‧ substrate processing device
2‧‧‧處理單元 2‧‧‧ processing unit
3‧‧‧控制裝置 3‧‧‧control device
4‧‧‧處理腔室 4‧‧‧ treatment chamber
5‧‧‧自轉夾具 5‧‧‧rotation fixture
6‧‧‧基板對向面 6‧‧‧ Opposite side of substrate
7‧‧‧對向構件 7‧‧‧ Opposing member
8‧‧‧第一噴出口 8‧‧‧ the first spray outlet
9‧‧‧第一噴嘴 9‧‧‧ the first nozzle
10‧‧‧第二噴出口 10‧‧‧Second spray outlet
11‧‧‧第二噴嘴 11‧‧‧Second Nozzle
12‧‧‧有機溶劑供給單元 12‧‧‧Organic solvent supply unit
13‧‧‧清洗用水供給單元 13‧‧‧washing water supply unit
14‧‧‧硫酸含有液供給單元 14‧‧‧ Sulfuric acid containing liquid supply unit
15‧‧‧洗淨藥液供給單元 15‧‧‧washing liquid supply unit
16‧‧‧處理罩 16‧‧‧Handling cover
18‧‧‧隔壁 18‧‧‧ next door
19‧‧‧FFU 19‧‧‧FFU
21‧‧‧第一閥開啟感測器 21‧‧‧First valve opening sensor
22‧‧‧自轉馬達 22‧‧‧rotation motor
23‧‧‧下自轉軸 23‧‧‧bottom rotation shaft
24‧‧‧自轉基座 24‧‧‧rotation base
25‧‧‧夾持構件 25‧‧‧ clamping member
26‧‧‧阻隔板 26‧‧‧Barrier
27‧‧‧上自轉軸 27‧‧‧up rotation axis
28‧‧‧貫通孔 28‧‧‧through hole
29‧‧‧中心軸噴嘴 29‧‧‧ central axis nozzle
30‧‧‧罩殼 30‧‧‧Cover
31‧‧‧阻隔板旋轉單元 31‧‧‧Baffle rotating unit
32‧‧‧阻隔板升降單元 32‧‧‧Baffle lift unit
33‧‧‧阻隔板接近位置感測器 33‧‧‧Barrier Proximity Position Sensor
34‧‧‧有機溶劑配管 34‧‧‧Organic solvent piping
35‧‧‧第一有機溶劑閥 35‧‧‧The first organic solvent valve
36‧‧‧第二有機溶劑閥 36‧‧‧Second Organic Solvent Valve
37‧‧‧閥關閉感測器 37‧‧‧valve closing sensor
38‧‧‧第一分歧位置 38‧‧‧ first divergence
39‧‧‧第一水配管 39‧‧‧First water piping
40‧‧‧有機溶劑下游側部分 40‧‧‧ Downstream side of organic solvent
41‧‧‧有機溶劑上游側部分 41‧‧‧upstream side of organic solvent
42‧‧‧第一檢測位置 42‧‧‧First detection position
43‧‧‧第一液體偵測感測器 43‧‧‧The first liquid detection sensor
44‧‧‧第二檢測位置 44‧‧‧Second detection position
45‧‧‧第二液體偵測感測器 45‧‧‧Second liquid detection sensor
46‧‧‧第一水閥 46‧‧‧The first water valve
48‧‧‧第二分歧位置 48‧‧‧ second divergence
49‧‧‧吸引配管 49‧‧‧ suction pipe
50‧‧‧水下游側部分 50‧‧‧ downstream side of water
51‧‧‧吸引閥 51‧‧‧ Suction valve
52‧‧‧吸引裝置 52‧‧‧ Attraction device
53‧‧‧真空產生器 53‧‧‧Vacuum generator
54‧‧‧驅動閥 54‧‧‧Drive valve
55‧‧‧吸引單元 55‧‧‧Attraction unit
56‧‧‧第二水配管 56‧‧‧Second water piping
57‧‧‧第二水閥 57‧‧‧Second Water Valve
58‧‧‧惰性氣體配管 58‧‧‧Inert gas piping
59‧‧‧惰性氣體閥 59‧‧‧Inert gas valve
60‧‧‧硫酸含有液噴嘴 60‧‧‧Sulfuric acid containing liquid nozzle
61‧‧‧硫酸含有液配管 61‧‧‧Sulfuric acid containing liquid pipe
62‧‧‧硫酸含有液閥 62‧‧‧Sulfuric acid containing liquid valve
63‧‧‧第一噴嘴移動單元 63‧‧‧The first nozzle moving unit
64‧‧‧噴嘴退避感測器 64‧‧‧Nozzle Retreat Sensor
65‧‧‧洗淨藥液噴嘴 65‧‧‧washing liquid nozzle
66‧‧‧洗淨藥液配管 66‧‧‧washing liquid pipe
67‧‧‧洗淨藥液閥 67‧‧‧wash medicine valve
68‧‧‧第二噴嘴移動單元 68‧‧‧Second nozzle moving unit
71‧‧‧第一防護罩 71‧‧‧First protective cover
72‧‧‧第二防護罩 72‧‧‧Second protective cover
73‧‧‧防護罩升降單元 73‧‧‧Protective cover lifting unit
74‧‧‧底部 74‧‧‧ bottom
75‧‧‧內壁部 75‧‧‧Inner wall
76‧‧‧外壁部 76‧‧‧ Outer wall
77‧‧‧導引部 77‧‧‧Guide
78‧‧‧本體部 78‧‧‧Body
79、88‧‧‧上端部 79, 88‧‧‧ upper end
80‧‧‧第一排液槽 80‧‧‧ first row of liquid tank
81‧‧‧排氣排液管 81‧‧‧ exhaust pipe
82‧‧‧硫酸含有液用分歧配管 82‧‧‧ branch pipe for sulfuric acid containing liquid
83‧‧‧洗淨藥液用分歧配管 83‧‧‧ Branch piping for washing liquid
84‧‧‧水用分歧配管 84‧‧‧Water branch piping
85‧‧‧排液分歧閥 85‧‧‧Draining diverter valve
86‧‧‧第二排液槽 86‧‧‧Second Row Liquid Tank
87、100‧‧‧排氣配管 87, 100‧‧‧ exhaust pipe
89‧‧‧開口 89‧‧‧ opening
90‧‧‧上端 90‧‧‧ upper end
91‧‧‧下端部 91‧‧‧ lower end
92‧‧‧折返部 92‧‧‧Return Department
93‧‧‧防護罩上位置感測器 93‧‧‧Position sensor on protective cover
94‧‧‧防護罩下位置感測器 94‧‧‧Position sensor under protective cover
95‧‧‧第二閥關閉感測器 95‧‧‧Second valve closing sensor
97‧‧‧氣液分離器 97‧‧‧Gas-liquid separator
101‧‧‧排氣閥 101‧‧‧ exhaust valve
A1、A2‧‧‧旋轉軸線 A1, A2‧‧‧‧Axis of rotation
C‧‧‧承載器 C‧‧‧Carrier
CR‧‧‧基板搬運機器人 CR‧‧‧ substrate handling robot
H‧‧‧手部 H‧‧‧hand
IR‧‧‧搬運機器人 IR‧‧‧handling robot
LP‧‧‧裝載埠 LP‧‧‧ Loading port
W‧‧‧基板 W‧‧‧ substrate
圖1係用以說明本發明的實施形態之一的基板處理裝置的內部的布局之示意性的俯視圖。 FIG. 1 is a schematic plan view for explaining an internal layout of a substrate processing apparatus according to an embodiment of the present invention.
圖2A係用以說明前述基板處理裝置所具備的處理單元的構成例之示意性的剖視圖。 2A is a schematic cross-sectional view illustrating a configuration example of a processing unit provided in the substrate processing apparatus.
圖2B係用以具體性地說明前述處理單元所含有之對向構件的周邊的構成之圖。 FIG. 2B is a diagram for specifically explaining the structure of the periphery of the facing member included in the processing unit.
圖2C係將前述處理單元的下部的構成例放大顯示之示意性的剖視圖。 FIG. 2C is a schematic cross-sectional view showing a configuration example of a lower portion of the processing unit in an enlarged manner.
圖3係用以說明前述基板處理裝置的主要部分的電性構成之方塊圖。 FIG. 3 is a block diagram illustrating the electrical configuration of the main part of the substrate processing apparatus.
圖4係用以說明前述處理單元所為之第一基板處理例之流程圖。 FIG. 4 is a flowchart illustrating a first substrate processing example for the aforementioned processing unit.
圖5A至圖5B係用以說明前述第一基板處理例之示意性的圖。 5A to 5B are schematic diagrams for explaining the aforementioned first substrate processing example.
圖5C至圖5D係用以說明接續圖5B的步驟之示意性的圖。 5C to 5D are schematic diagrams for explaining steps following FIG. 5B.
圖5E至圖5F係用以說明接續圖5D的步驟之示意性的圖。 5E to 5F are schematic diagrams for explaining steps following FIG. 5D.
圖5G至圖5H係用以說明接續圖5F的步驟之示意性的圖。 5G to 5H are schematic diagrams for explaining steps following FIG. 5F.
圖6係用以說明前述第一基板處理例的主要的步驟中 之第一液體偵測感測器及第二液體偵測感測器所為之監視狀況之示意性的圖。 FIG. 6 illustrates the main steps of the first substrate processing example. A schematic diagram of the monitoring conditions for the first liquid detection sensor and the second liquid detection sensor.
圖7係用以說明前述處理單元所為之第二基板處理例之示意性的圖。 FIG. 7 is a schematic diagram for explaining a second substrate processing example in which the processing unit is used.
圖8係用以說明前述處理單元所為之第三基板處理例之示意性的圖。 FIG. 8 is a schematic diagram for explaining a third substrate processing example in which the processing unit is used.
圖1係用以說明本發明的第一實施形態的基板處理裝置1的內部的布局之示意性的俯視圖。基板處理裝置1係用以逐片處理矽晶圓等基板W之葉片式的裝置。在本實施形態中,基板W為圓板狀的基板。基板處理裝置1係包含有:複數個處理單元2,係以處理液處理基板W;裝載埠(load port)LP,係用以載置承載器(carrier)C,該承載器C係用以收容在處理單元2處理之複數片基板W;搬運機器人IR及搬運機器人CR,係用以在裝載埠LP與處理單元2之間搬運基板W;以及控制裝置3,係控制基板處理裝置1。搬運機器人IR係在承載器C與基板搬運機器人CR之間搬運基板W。基板搬運機器人CR係在搬運機器人IR與處理單元2之間搬運基板W。複數個處理單元2係例如具有同樣的構成。 FIG. 1 is a schematic plan view for explaining the layout inside the substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing apparatus 1 is a blade-type apparatus for processing a substrate W such as a silicon wafer one by one. In this embodiment, the substrate W is a disc-shaped substrate. The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing a substrate W with a processing liquid; and a load port LP for carrying a carrier C, which is used for accommodating A plurality of substrates W processed in the processing unit 2; a transfer robot IR and a transfer robot CR are used to transfer the substrate W between the loading port LP and the processing unit 2; and a control device 3 is used to control the substrate processing device 1. The transfer robot IR transfers the substrate W between the carrier C and the substrate transfer robot CR. The substrate transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example.
圖2A係用以說明處理單元2的構成例之示意性的剖視圖。 FIG. 2A is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.
處理單元2係包含有:箱形的處理腔室4;自轉夾具(基板保持單元)5,係在處理腔室4內以水平的姿勢保持一片基板W,並使基板W繞著通過基板W的中心之鉛直的旋轉軸 線A1旋轉;以及對向構件7,係具有基板對向面6,該基板對向面6係與被自轉夾具5所保持的基板W的上表面(主面)相對向。對向構件7係包含有:第一噴嘴9,係具有第一噴出口(噴出口)8,該第一噴出口8係用以朝被自轉夾具5所保持的基板W的上表面的中央部噴出流體;第二噴嘴11,係具有第二噴出口10,該第二噴出口10係用以朝被自轉夾具5所保持的基板W的上表面的中央部噴出流體;有機溶劑供給單元(第一藥劑流體供給單元)12,係用以將作為第一藥劑流體之液體的有機溶劑(具有低表面張力之有機溶劑)的一例的異丙醇(isopropyl alcohol;IPA)供給至第一噴嘴9;清洗(rinse)用水供給單元(第二水供給單元)13,係用以將作為清洗液之水(例如碳酸水)供給至第二噴嘴11;硫酸含有液供給單元(第二藥劑流體供給單元)14,係用以將作為第二藥劑流體之硫酸含有液的一例的硫酸過氧化氫混合液(sulfuric acid/hydrogen peroxide mixture;SPM)供給至被自轉夾具5所保持的基板W的上表面;洗淨藥液供給單元15,係用以將洗淨藥液的一例的SC1(ammonia-hydrogen peroxide mixture;氨水過氧化氫混和液)(包含有NH4OH以及H2O2之液體)供給至被自轉夾具5所保持的基板W的上表面;以及筒狀的處理罩(processing cup)16,係圍繞自轉夾具5。 The processing unit 2 includes: a box-shaped processing chamber 4; and a rotation fixture (substrate holding unit) 5 that holds a substrate W in a horizontal posture in the processing chamber 4 and passes the substrate W around the substrate W The center vertical axis of rotation A1 rotates; and the facing member 7 includes a substrate facing surface 6 that faces the upper surface (main surface) of the substrate W held by the rotation jig 5. The opposing member 7 includes a first nozzle 9 having a first ejection port (ejection port) 8 which is directed toward the center of the upper surface of the substrate W held by the rotation jig 5. A fluid is ejected; a second nozzle 11 is provided with a second ejection port 10 for ejecting a fluid toward a center portion of the upper surface of the substrate W held by the rotation jig 5; an organic solvent supply unit (the first A pharmaceutical fluid supply unit) 12 is used to supply an isopropyl alcohol (IPA), which is an example of an organic solvent (organic solvent having a low surface tension) as a liquid of the first pharmaceutical fluid, to the first nozzle 9; A rinse water supply unit (second water supply unit) 13 is used to supply water (for example, carbonated water) as a cleaning liquid to the second nozzle 11; a sulfuric acid-containing liquid supply unit (second chemical fluid supply unit) 14. It is used to supply a sulfuric acid / hydrogen peroxide mixture (SPM), which is an example of a sulfuric acid-containing liquid as a second pharmaceutical fluid, to the upper surface of the substrate W held by the rotation jig 5; washing Net medicinal solution supply unit 15 SC1 (ammonia-hydrogen peroxide mixture) (a liquid containing NH 4 OH and H 2 O 2 ), which is an example of a cleaning solution, is supplied to the substrate W held by the rotation jig 5 And a cylindrical processing cup 16 surrounding the rotation jig 5.
處理腔室4係包含有:箱狀的隔壁18,係收容自轉夾具5或噴嘴;以及作為送風單元之FFU(fan filter unit;風扇過濾器單元)19,係用以將清淨空氣(藉由過濾器所過濾的空氣)從隔壁18的上部輸送至隔壁18內。 The processing chamber 4 includes: a box-shaped partition wall 18 for containing the rotation fixture 5 or a nozzle; and a FFU (fan filter unit) 19 as a blower unit for purifying clean air (by filtering The air filtered by the device is delivered from the upper part of the partition wall 18 into the partition wall 18.
FFU19係配置於隔壁18的上方,並安裝至隔壁18的頂板。FFU19係從隔壁18的頂板將清淨空氣朝下地輸送至處理腔室4內。此外,於處理罩16的底部連接有排氣排液配管81,排氣排液配管81係用以將處理腔室4內的氣體導出至設置有基板處理裝置1的工廠所設置的排氣處理設備。因此,於處理腔室4內朝下方流動之降流(down flow)(下降流)係藉由FFU19以及排氣排液配管81所形成。基板W的處理係在處理腔室4內形成有降流的狀態下所進行。 The FFU19 is arranged above the partition wall 18 and is mounted on the top plate of the partition wall 18. The FFU 19 sends clean air downward from the top plate of the partition wall 18 into the processing chamber 4. In addition, an exhaust liquid discharge pipe 81 is connected to the bottom of the processing cover 16. The exhaust liquid discharge pipe 81 is used to discharge the gas in the processing chamber 4 to an exhaust treatment provided in a factory where the substrate processing apparatus 1 is installed. device. Therefore, the downflow (downflow) flowing downward in the processing chamber 4 is formed by the FFU 19 and the exhaust liquid discharge pipe 81. The processing of the substrate W is performed in a state where a downflow is formed in the processing chamber 4.
作為自轉夾具5,係採用用以在水平方向夾著基板W並水平地保持基板W之夾持式的夾具。具體而言,自轉夾具5係包含有:自轉馬達(spin motor)22;下自轉軸23,係與該自轉馬達22的驅動軸一體化;以及圓板狀的自轉基座(spin base)24,係略水平地安裝至下自轉軸23的上端。 As the rotation jig 5, a clamp type jig for holding the substrate W in a horizontal direction and holding the substrate W horizontally is used. Specifically, the rotation fixture 5 includes: a spin motor 22; a lower rotation shaft 23 integrated with a driving shaft of the rotation motor 22; and a disc-shaped spin base 24, The system is mounted to the upper end of the lower rotation shaft 23 almost horizontally.
於自轉基座24的上表面的周緣部配置有複數個(三個以上,例如六個)夾持構件25。複數個夾持構件25係在自轉基座24的上表面周緣部中,在與基板W的外周形狀對應之圓周上隔著適當的間隔配置。 A plurality of (three or more, for example, six) clamping members 25 are arranged on a peripheral edge portion of the upper surface of the rotation base 24. The plurality of clamping members 25 are arranged on the peripheral edge portion of the upper surface of the rotation base 24 and are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W.
此外,作為自轉夾具5,並未限定於夾持式的自轉夾具,例如亦可採用真空吸附式的自轉夾具(真空夾具),該真空吸附式的自轉夾具係將基板W的背面真空吸附,藉此以水平的姿勢保持基板W,並在此狀態下進一步使基板W繞著鉛直的旋轉軸線旋轉,藉此使被自轉夾具5所保持的基板W旋轉。 In addition, the rotation jig 5 is not limited to a clamping type rotation jig. For example, a vacuum suction type rotation jig (vacuum jig) may be used. The vacuum suction type rotation jig vacuum-adsorbs the back surface of the substrate W, and In this state, the substrate W is held in a horizontal posture, and in this state, the substrate W is further rotated around a vertical rotation axis, thereby rotating the substrate W held by the rotation jig 5.
圖2B係用以具體性地說明處理單元2所含有的對向構件7的周邊的構成之圖。 FIG. 2B is a diagram for specifically explaining the configuration of the periphery of the facing member 7 included in the processing unit 2.
如圖2A及圖2B所示,對向構件7係包含有阻隔板26以及同軸地設置於阻隔板26之上自轉軸27。阻隔板26為具有與基板W大致相同直徑或者以上的直徑之圓板狀。基板對向面6係形成阻隔板26的下表面,且為與基板W的上表面全域相對向之圓形。 As shown in FIGS. 2A and 2B, the opposing member 7 includes a barrier plate 26 and a rotation shaft 27 coaxially disposed on the barrier plate 26. The barrier plate 26 has a disk shape having a diameter substantially the same as or larger than that of the substrate W. The substrate-opposing surface 6 forms a lower surface of the barrier plate 26, and has a circular shape facing the entire area of the upper surface of the substrate W.
於基板對向面6的中央部形成有圓筒狀的貫通孔28,該貫通孔28係上下地貫通阻隔板26以及上自轉軸27。貫通孔28的內周壁係被圓筒面區劃。於貫通孔28的內部插通有第一噴嘴9以及第二噴嘴11。第一噴嘴9及第二噴嘴11係分別沿著上自轉軸27的旋轉軸線A2(與旋轉軸線A1同軸)於上下方向延伸。 A cylindrical through hole 28 is formed in the central portion of the substrate facing surface 6. The through hole 28 penetrates the blocking plate 26 and the upper rotation shaft 27 vertically. The inner peripheral wall system of the through hole 28 is partitioned by a cylindrical surface. A first nozzle 9 and a second nozzle 11 are inserted into the through hole 28. The first nozzle 9 and the second nozzle 11 extend in the vertical direction along the rotation axis A2 (coaxial with the rotation axis A1) of the upper rotation shaft 27, respectively.
具體而言,於貫通孔28的內部插通有中心軸噴嘴29,該中心軸噴嘴29係沿著阻隔板26的旋轉軸線A2上下地延伸。如圖2B所示,中心軸噴嘴29係包含有第一噴嘴9、第二噴嘴11以及圍繞第一噴嘴9與第二噴嘴11之筒狀的罩殼(casing)30。在本實施形態中,第一噴嘴9及第二噴嘴11係分別為內管(inner tube)。第一噴出口8係形成於第一噴嘴9的下端。第二噴出口10係形成於第二噴嘴11的下端。罩殼30係沿著旋轉軸線A2於上下方向延伸。罩殼30係以非接觸狀態插入至貫通孔28的內部。因此,阻隔板26的內周係於徑方向隔著間隔圍繞罩殼30的外周。 Specifically, a central axis nozzle 29 is inserted into the through hole 28, and the central axis nozzle 29 extends up and down along the rotation axis A2 of the barrier plate 26. As shown in FIG. 2B, the central axis nozzle 29 includes a first nozzle 9, a second nozzle 11, and a cylindrical casing 30 surrounding the first nozzle 9 and the second nozzle 11. In this embodiment, each of the first nozzle 9 and the second nozzle 11 is an inner tube. The first discharge port 8 is formed at the lower end of the first nozzle 9. The second discharge port 10 is formed at the lower end of the second nozzle 11. The cover 30 extends in the vertical direction along the rotation axis A2. The cover 30 is inserted into the through hole 28 in a non-contact state. Therefore, the inner periphery of the barrier plate 26 surrounds the outer periphery of the cover 30 in the radial direction at intervals.
如圖2A所示,於上自轉軸27結合有阻隔板旋轉單元31。阻隔板旋轉單元31係針對每個阻隔板26使上自轉軸27繞著旋轉軸線A2旋轉。於阻隔板26結合有包含有電動馬達、滾 珠螺桿等之構成的阻隔板升降單元32。阻隔板升降單元32係針對每個中心軸噴嘴29使阻隔板26於鉛直方向升降。阻隔板升降單元32係使阻隔板26及中心軸噴嘴29在接近位置(參照圖5A等)與設置於接近位置的上方之退避位置(參照圖2A或圖5G等)之間升降,該接近位置係阻隔板26的基板對向面6接近被自轉夾具5所保持的基板W的上表面之位置。阻隔板升降單元32係可在接近位置與退避位置之間的各位置保持阻隔板26。 As shown in FIG. 2A, a barrier rotation unit 31 is coupled to the upper rotation shaft 27. The barrier rotation unit 31 rotates the upper rotation shaft 27 about the rotation axis A2 for each barrier 26. An electric motor, a roller A barrier lift unit 32 constituted by a bead screw or the like. The barrier lifting unit 32 lifts and lowers the barrier 26 in the vertical direction for each central axis nozzle 29. The barrier lift unit 32 lifts and lowers the barrier 26 and the central axis nozzle 29 between the approach position (refer to FIG. 5A and the like) and a retracted position (refer to FIG. 2A or FIG. 5G and the like) provided above the proximity position. The substrate facing surface 6 of the blocking spacer 26 is close to the upper surface of the substrate W held by the rotation jig 5. The barrier lift unit 32 can hold the barrier 26 at various positions between the approach position and the retracted position.
此外,設置有阻隔板接近位置感測器33(在圖2A至圖2C中未圖示),該阻隔板接近位置感測器33係與阻隔板26關連,用以檢測阻隔板26朝向接近位置的配置。 In addition, a barrier close proximity sensor 33 (not shown in FIGS. 2A to 2C) is provided. The barrier close proximity sensor 33 is connected to the barrier 26 to detect the barrier 26 toward the approach position. Configuration.
如圖2B所示,有機溶劑供給單元12係包含有:有機溶劑配管(藥劑流體配管)34,係連接至第一噴嘴9,且內部連通至第一噴出口8;第一有機溶劑閥35,係夾設於有機溶劑配管34,並將有機溶劑予以開閉;第二有機溶劑閥36,係夾設於比第一有機溶劑閥35還下游側的有機溶劑配管34,並將有機溶劑予以開閉;以及閥關閉感測器37,係偵測第一有機溶劑閥35處於閉狀態之情況。 As shown in FIG. 2B, the organic solvent supply unit 12 includes: an organic solvent pipe (medicine fluid pipe) 34 connected to the first nozzle 9 and internally connected to the first ejection port 8; a first organic solvent valve 35, The second organic solvent valve 36 is clipped to the organic solvent pipe 34 on the downstream side of the organic solvent pipe 34 and opens and closes the organic solvent; And the valve closing sensor 37 detects that the first organic solvent valve 35 is in a closed state.
如圖2B所示,在有機溶劑配管34中,於設定於第一有機溶劑閥35與第二有機溶劑閥36之間的第一分歧位置38連接有第一水配管39。在以下的說明中,將有機溶劑配管34中之比第一分歧位置38還下游側的下游側部分40稱為「有機溶劑下游側部分40」。將有機溶劑配管34中之比第一分歧位置38還上游側的上游側部分41稱為「有機溶劑上游側 部分41」。在本實施形態中,第一分歧位置38係設定於接近有機溶劑配管34的上端之位置。因此,在有機溶劑未存在於有機溶劑下游側部分40的狀態下,第一有機溶劑閥35的開啟後直至有機溶劑到達至第二噴嘴11(第二噴出口10)之時間變長(例如約3秒)。 As shown in FIG. 2B, in the organic solvent pipe 34, a first water pipe 39 is connected to a first branch position 38 set between the first organic solvent valve 35 and the second organic solvent valve 36. In the following description, the downstream portion 40 in the organic solvent piping 34 that is further downstream than the first branching position 38 is referred to as an "organic solvent downstream portion 40". The upstream portion 41 in the organic solvent piping 34 that is upstream from the first branching position 38 is referred to as an "organic solvent upstream side." Section 41. " In this embodiment, the first branch position 38 is set to a position close to the upper end of the organic solvent pipe 34. Therefore, in a state where the organic solvent is not present in the organic solvent downstream side portion 40, the time from when the first organic solvent valve 35 is opened until the organic solvent reaches the second nozzle 11 (the second discharge port 10) becomes longer (for example, about 3 seconds).
當第一有機溶劑閥35被開啟時,來自有機溶劑供給源的有機溶劑係被供給至第二有機溶劑閥36。當在此狀態下第二有機溶劑閥36被開啟時,供給至第二有機溶劑閥36的有機溶劑係從第一噴出口8朝基板W的上表面中央部噴出。 When the first organic solvent valve 35 is opened, an organic solvent from an organic solvent supply source is supplied to the second organic solvent valve 36. When the second organic solvent valve 36 is opened in this state, the organic solvent supplied to the second organic solvent valve 36 is discharged from the first discharge port 8 toward the center portion of the upper surface of the substrate W.
如圖2B所示,在有機溶劑下游側部分40中,於比第二有機溶劑閥36的夾設位置還上游側的預定的第一檢測位置42配置有用以檢測有機溶劑下游側部分40的內部是否存在液體之第一液體偵測感測器43。第一液體偵測感測器43係檢測第一檢測位置42中的有機溶劑配管34的內部是否存在液體,並將因應檢測結果的訊號發送至控制裝置3。在有機溶劑配管34的內部的液體的前端前進至超過第一檢測位置42(位於第一噴嘴9側)時,液體被第一液體偵測感測器43檢測出。在有機溶劑配管34的內部的液體的前端後退超過第一檢測位置42(位於有機溶劑供給源側)時,液體未被第一液體偵測感測器43檢測出。 As shown in FIG. 2B, in the organic solvent downstream portion 40, a predetermined first detection position 42 located upstream from the sandwiched position of the second organic solvent valve 36 is arranged to detect the inside of the organic solvent downstream portion 40. Whether there is a liquid first liquid detection sensor 43. The first liquid detection sensor 43 detects whether a liquid exists in the organic solvent pipe 34 in the first detection position 42 and sends a signal corresponding to the detection result to the control device 3. When the front end of the liquid inside the organic solvent pipe 34 advances beyond the first detection position 42 (located on the side of the first nozzle 9), the liquid is detected by the first liquid detection sensor 43. When the front end of the liquid inside the organic solvent pipe 34 recedes beyond the first detection position 42 (located on the organic solvent supply source side), the liquid is not detected by the first liquid detection sensor 43.
如圖2B所示,在有機溶劑下游側部分40中,於比第二有機溶劑閥36的夾設位置還下游側的預定的第二檢測位置44配置有用以檢測有機溶劑下游側部分40的內部是否存在液體之第二液體偵測感測器45。第二液體偵測感測器45係 檢測第二檢測位置44中的有機溶劑配管34的內部是否存在液體,並將因應檢測結果的訊號輸送至控制裝置3。在有機溶劑配管34的內部的液體的前端前進至超過第二檢測位置44(位於第一噴嘴9側)時,液體被第二液體偵測感測器45檢測出。在有機溶劑配管34的內部的液體的前端後退超過第二檢測位置44(位於有機溶劑供給源側)時,液體未被第二液體偵測感測器45檢測出。 As shown in FIG. 2B, in the organic solvent downstream side portion 40, a predetermined second detection position 44 located downstream from the sandwiched position of the second organic solvent valve 36 is arranged to detect the inside of the organic solvent downstream side portion 40. Whether there is a liquid second liquid detection sensor 45. The second liquid detection sensor 45 series It is detected whether a liquid is present inside the organic solvent pipe 34 in the second detection position 44 and a signal corresponding to the detection result is transmitted to the control device 3. When the tip of the liquid inside the organic solvent pipe 34 advances beyond the second detection position 44 (located on the side of the first nozzle 9), the liquid is detected by the second liquid detection sensor 45. When the front end of the liquid inside the organic solvent pipe 34 recedes beyond the second detection position 44 (on the side of the organic solvent supply source), the liquid is not detected by the second liquid detection sensor 45.
第一液體偵測感測器43及第二液體偵測感測器45係分別為例如液體偵測用的光纖感測器(例如日本KEYENCE CORPORATION製的FU95S),並直接安裝配置或接近配置於有機溶劑配管34的外周壁。第一液體偵測感測器43及/或第二液體偵測感測器45亦可例如藉由電容量型的感測器所構成。 The first liquid detection sensor 43 and the second liquid detection sensor 45 are, for example, optical fiber sensors for liquid detection (such as FU95S manufactured by Japan Keyence Corporation), and are directly installed or configured near The outer peripheral wall of the organic solvent pipe 34. The first liquid detection sensor 43 and / or the second liquid detection sensor 45 can also be configured by, for example, a capacitance type sensor.
如圖2B所示,成為來自水供給源的水(例如碳酸水)供給至第一水配管39。於第一水配管39的中途部夾設有用以將第一水配管39予以開閉之第一水閥46。當第一水閥46被開啟時,從第一水配管39朝有機溶劑下游側部分40供給。此外,當第一水閥46被關閉時,停止從第一水配管39朝有機溶劑下游側部分40供給水。從第一水配管39朝有機溶劑配管34所供給的水係例如為碳酸水。第一水配管39及第一水閥46係包含於置換用水供給單元(第一水供給單元)47。 As shown in FIG. 2B, water (for example, carbonated water) that is from a water supply source is supplied to the first water pipe 39. A first water valve 46 is provided in the middle of the first water pipe 39 to open and close the first water pipe 39. When the first water valve 46 is opened, it is supplied from the first water pipe 39 to the organic solvent downstream side portion 40. In addition, when the first water valve 46 is closed, the supply of water from the first water pipe 39 to the organic solvent downstream side portion 40 is stopped. The water system supplied from the first water pipe 39 to the organic solvent pipe 34 is, for example, carbonated water. The first water pipe 39 and the first water valve 46 are included in a replacement water supply unit (first water supply unit) 47.
如圖2B所示,於設定在第一水配管39的中途部(亦即第一分歧位置38與第一水閥46之間)之第二分歧位置48分歧連接有吸引配管49。在以下的說明中,將第一水配管39中 之比第二分歧位置48還下游側的下游側部分50稱為「水下游側部分50」。 As shown in FIG. 2B, a suction pipe 49 is branchedly connected to a second branched position 48 set in the middle of the first water pipe 39 (that is, between the first branched position 38 and the first water valve 46). In the following description, the first water pipe 39 The downstream portion 50 that is further downstream than the second branching position 48 is referred to as a "water downstream portion 50".
如圖2B所示,於吸引配管49的中途部夾設有用以將吸引配管49予以開閉之吸引閥51。於吸引配管49的前端連接有吸引裝置52。如圖2A所示,吸引裝置52係例如包含有真空產生器53以及用以使真空產生器53作動之驅動閥54。吸引裝置52並未限定於藉由真空產生而產生吸引力的吸引裝置,例如亦可為吸引器(aspirator)等。 As shown in FIG. 2B, a suction valve 51 for opening and closing the suction pipe 49 is provided in the middle of the suction pipe 49. A suction device 52 is connected to the front end of the suction pipe 49. As shown in FIG. 2A, the suction device 52 includes, for example, a vacuum generator 53 and a driving valve 54 for operating the vacuum generator 53. The suction device 52 is not limited to a suction device that generates a suction force by vacuum generation, and may be, for example, an aspirator.
如圖2B所示,在吸引裝置52(真空產生器53)的動作狀態中,當在第一有機溶劑閥35及第一水閥46被關閉且第二有機溶劑閥36被開啟的狀態下吸引閥51被開啟時,吸引裝置52的作動被有效化,有機溶劑下游側部分40及水下游側部分50的內部被排氣,有機溶劑下游側部分40及水下游側部分50所含有的液體(水或有機溶劑)係被吸入至吸引配管49。吸引裝置52及吸引閥51係包含於吸引單元55。 As shown in FIG. 2B, in the operating state of the suction device 52 (vacuum generator 53), when the first organic solvent valve 35 and the first water valve 46 are closed and the second organic solvent valve 36 is opened, the suction When the valve 51 is opened, the operation of the suction device 52 is activated, the inside of the organic solvent downstream portion 40 and the water downstream portion 50 is exhausted, and the liquid contained in the organic solvent downstream portion 40 and the water downstream portion 50 ( Water or organic solvent) is sucked into the suction pipe 49. The suction device 52 and the suction valve 51 are included in the suction unit 55.
如圖2B所示,清洗用水供給單元13係包含有:第二水配管56,係連接至第二噴嘴11,且內部連通至第二噴出口10;以及第二水閥57,係將第二水配管56予以開閉,用以切換從第二水配管56朝第二噴嘴11供給水以及停止供給水。當第二水閥57被開啟時,來自水供給源的水係被供給至第二水配管56,並從第二噴出口10朝基板W的上表面中央部噴出。 As shown in FIG. 2B, the cleaning water supply unit 13 includes: a second water pipe 56 connected to the second nozzle 11 and internally connected to the second discharge port 10; and a second water valve 57 which connects the second water valve 57 The water pipe 56 is opened and closed to switch the supply of water from the second water pipe 56 to the second nozzle 11 and stop the water supply. When the second water valve 57 is opened, the water system from the water supply source is supplied to the second water pipe 56 and is discharged from the second discharge port 10 toward the center of the upper surface of the substrate W.
如圖2A所示,處理單元2係進一步包含有:惰性氣體配管58,係將惰性氣體供給至罩殼30的外周與阻隔板26的 內周之間的筒狀的空間;以及惰性氣體閥59,夾設於惰性氣體配管58。當惰性氣體閥59被開啟時,來自惰性氣體供給源的惰性氣體係通過罩殼30的外周與阻隔板26的內周之間,並從阻隔板26的下表面中央部朝下方噴出。因此,當在阻隔板26配置於接近位置的狀態下惰性氣體閥59被開啟時,從阻隔板26的下表面中央部噴出的惰性氣體係在基板W的上表面與阻隔板26的基板對向面6之間朝外側(從旋轉軸線A1離開的方向)擴展,且基板W與阻隔板26之間的空氣係被置換成惰性氣體。在惰性氣體配管58內流動的惰性氣體係例如為氮氣。惰性氣體並未限定於氮氣,亦可為氦氣或氬氣等其他的惰性氣體。 As shown in FIG. 2A, the processing unit 2 further includes an inert gas pipe 58 for supplying an inert gas to the outer periphery of the cover 30 and the barrier plate 26. A cylindrical space between the inner circumferences; and an inert gas valve 59 interposed between the inert gas pipes 58. When the inert gas valve 59 is opened, the inert gas system from the inert gas supply source passes between the outer periphery of the casing 30 and the inner periphery of the barrier plate 26 and is sprayed downward from the central portion of the lower surface of the barrier plate 26. Therefore, when the inert gas valve 59 is opened in a state where the barrier plate 26 is disposed at the close position, the inert gas system ejected from the center portion of the lower surface of the barrier plate 26 faces the substrate of the barrier plate 26 on the upper surface of the substrate W The space between the surfaces 6 extends outward (in a direction away from the rotation axis A1), and the air system between the substrate W and the barrier plate 26 is replaced with an inert gas. The inert gas system flowing through the inert gas pipe 58 is, for example, nitrogen. The inert gas is not limited to nitrogen, and may be other inert gas such as helium or argon.
如圖2A所示,硫酸含有液供給單元14係包含有:硫酸含有液噴嘴60;硫酸含有液配管61,係連接至硫酸含有液噴嘴60;硫酸含有液閥62,係夾設於硫酸含有液配管61;以及第一噴嘴移動單元63,係使硫酸含有液噴嘴60移動。第一噴嘴移動單元63係包含有馬達等。於第一噴嘴移動單元63係結合有噴嘴退避感測器64,該噴嘴退避感測器64係用以檢測硫酸含有液噴嘴60位於退避位置之情況。 As shown in FIG. 2A, the sulfuric acid-containing liquid supply unit 14 includes: a sulfuric acid-containing liquid nozzle 60; a sulfuric acid-containing liquid pipe 61 connected to the sulfuric acid-containing liquid nozzle 60; and a sulfuric acid-containing liquid valve 62 sandwiched between the sulfuric acid-containing liquid The piping 61 and the first nozzle moving unit 63 move the sulfuric acid-containing liquid nozzle 60. The first nozzle moving unit 63 includes a motor and the like. A nozzle retreat sensor 64 is coupled to the first nozzle moving unit 63, and the nozzle retreat sensor 64 is used to detect a situation where the sulfuric acid-containing liquid nozzle 60 is located at the retreat position.
在第一噴嘴移動單元63例如藉由步進馬達(stepping motor)所構成的情形中,噴嘴退避感測器64係能參照從馬達控制部所輸出之用以控制該步進馬達且已因應硫酸含有液噴嘴60的移動量(手臂的搖動角度)之編碼器訊號來檢測硫酸含有液噴嘴60是否位於退避位置。 In the case where the first nozzle moving unit 63 is constituted by, for example, a stepping motor, the nozzle avoidance sensor 64 can refer to the output from the motor control unit to control the stepping motor and has responded to sulfuric acid. The encoder signal of the movement amount (arm swing angle) of the liquid containing nozzle 60 is used to detect whether the sulfuric acid containing liquid nozzle 60 is located at the retreat position.
硫酸含有液噴嘴60係例如為用以在連續流動的狀態下 噴出液體之直式噴嘴(straight nozzle)。於硫酸含有液配管61供給有來自硫酸含有液供給源的硫酸含有液。在本實施形態中,於硫酸含有液配管61供給有作為硫酸含有液之高溫(例如約170℃至約200℃)的硫酸過氧化氫混合液(SPM)。藉由硫酸與過氧化氫水的反應熱升溫達至前述高溫的SPM係被供給至硫酸含有液配管61。 The sulfuric acid-containing liquid nozzle 60 is used, for example, in a state of continuous flow. A straight nozzle that ejects liquid. The sulfuric acid-containing liquid pipe 61 is supplied with a sulfuric acid-containing liquid from a sulfuric acid-containing liquid supply source. In this embodiment, a sulfuric acid-containing liquid pipe 61 is supplied with a sulfuric acid-containing liquid at a high temperature (for example, about 170 ° C. to about 200 ° C.) as a sulfuric acid-hydrogen peroxide mixed liquid (SPM). The SPM system heated up to the aforementioned high temperature by the reaction heat of sulfuric acid and hydrogen peroxide water is supplied to the sulfuric acid-containing liquid pipe 61.
當硫酸含有液閥62被開啟時,從硫酸含有液配管61供給至硫酸含有液噴嘴60之高溫的SPM係從硫酸含有液噴嘴60朝下方噴出。當硫酸含有液閥62被關閉時,停止從硫酸含有液噴嘴60噴出高溫的SPM。第一噴嘴移動單元63係使硫酸含有液噴嘴60在處理位置與退避位置之間移動,該處理位置係從硫酸含有液噴嘴60噴出之高溫的SPM被供給至基板W的上表面之位置,該退避位置係俯視觀看時硫酸含有液噴嘴60已退避至自轉夾具5的側方之位置。 When the sulfuric acid-containing liquid valve 62 is opened, the high-temperature SPM supplied from the sulfuric acid-containing liquid pipe 61 to the sulfuric acid-containing liquid nozzle 60 is sprayed downward from the sulfuric acid-containing liquid nozzle 60. When the sulfuric acid-containing liquid valve 62 is closed, the ejection of high-temperature SPM from the sulfuric acid-containing liquid nozzle 60 is stopped. The first nozzle moving unit 63 moves the sulfuric acid-containing liquid nozzle 60 between a processing position and a retreat position. The processing position is a position where the high-temperature SPM ejected from the sulfuric acid-containing liquid nozzle 60 is supplied to the upper surface of the substrate W. The retreat position is a position where the sulfuric acid-containing liquid nozzle 60 has retreated to the side of the rotation jig 5 when viewed from above.
如圖2A所示,洗淨藥液供給單元15係包含有:洗淨藥液噴嘴65;洗淨藥液配管66,係連接至洗淨藥液噴嘴65;洗淨藥液閥67,係夾設於洗淨藥液配管66;以及第二噴嘴移動單元68,係使洗淨藥液噴嘴65移動。洗淨藥液噴嘴65係例如為用以在連續流動的狀態下噴出液體之直式噴嘴。於洗淨藥液配管66供給有來自洗淨藥液供給源的洗淨藥液(例如SC1)。 As shown in FIG. 2A, the cleaning solution supply unit 15 includes: a cleaning solution nozzle 65; a cleaning solution pipe 66 connected to the cleaning solution nozzle 65; a cleaning solution valve 67; The cleaning chemical liquid pipe 66 is provided, and the second nozzle moving unit 68 moves the cleaning chemical liquid nozzle 65. The cleaning chemical nozzle 65 is, for example, a straight nozzle for ejecting a liquid in a continuous flow state. A cleaning solution (for example, SC1) from a cleaning solution supply source is supplied to the cleaning solution pipe 66.
當洗淨藥液閥67被開啟時,從洗淨藥液配管66供給至洗淨藥液噴嘴65的SC1係從洗淨藥液噴嘴65朝下方噴出。當洗淨藥液閥67被關閉時,停止從洗淨藥液噴嘴65噴出洗 淨藥液。第二噴嘴移動單元68係使洗淨藥液噴嘴65在處理位置與退避位置之間移動,該處理位置係從洗淨藥液噴嘴65噴出的SC1被供給至基板W的上表面之位置,該退避位置係俯視觀看時洗淨藥液噴嘴65已退避至自轉夾具5的側方之位置。再者,第二噴嘴移動單元68係使洗淨藥液噴嘴65在中央位置與周緣位置之間水平地移動,該中央位置係從洗淨藥液噴嘴65噴出的洗淨藥液著液至基板W的上表面中央部之位置,該周緣位置係從洗淨藥液噴嘴65噴出的洗淨藥液著液至基板W的上表面周緣部之位置。中央位置及周緣位置皆為處理位置。 When the cleaning liquid medicine valve 67 is opened, the SC1 supplied from the cleaning liquid pipe 66 to the cleaning liquid nozzle 65 is ejected downward from the cleaning liquid nozzle 65. When the cleaning chemical liquid valve 67 is closed, the spray from the cleaning chemical liquid nozzle 65 is stopped. Net medicine solution. The second nozzle moving unit 68 moves the cleaning chemical liquid nozzle 65 between the processing position and the retreat position. The processing position is a position where SC1 ejected from the cleaning chemical liquid nozzle 65 is supplied to the upper surface of the substrate W. The retreat position is a position where the cleaning solution nozzle 65 has retracted to the side of the rotation jig 5 when viewed from above. In addition, the second nozzle moving unit 68 moves the cleaning chemical liquid nozzle 65 horizontally between a central position and a peripheral position, and the central position is that the cleaning chemical liquid ejected from the cleaning chemical liquid nozzle 65 is deposited on the substrate. The position of the center portion of the upper surface of W, and the peripheral position is the position where the cleaning solution sprayed from the cleaning solution nozzle 65 is deposited on the peripheral portion of the upper surface of the substrate W. Both the central position and the peripheral position are processing positions.
圖2C係將處理單元2的下部的構成例放大顯示之示意性的剖視圖。 FIG. 2C is a schematic cross-sectional view showing a configuration example of a lower portion of the processing unit 2 in an enlarged manner.
如圖2A及圖2C所示,處理罩16係包含有圍繞自轉夾具5且用以接住飛散至基板W的周圍的處理液(洗淨藥液及清洗液)之第一防護罩(guard)71及第二防護罩72、以及用以使各個第一防護罩71及第二防護罩72獨立地升降之防護罩升降單元73。防護罩升降單元73係使各個第一防護罩71及第二防護罩72獨立地升降。此外,防護罩升降單元73係例如為包含有滾珠螺桿機構之構成。 As shown in FIG. 2A and FIG. 2C, the processing cover 16 is a first guard including a processing liquid (cleaning liquid and cleaning liquid) that surrounds the rotation jig 5 and is used to catch the surroundings of the substrate W. 71 and the second protective cover 72, and a protective cover lifting unit 73 for independently lifting and lowering each of the first protective cover 71 and the second protective cover 72. The shield lifting unit 73 lifts and lowers each of the first shield 71 and the second shield 72 independently. In addition, the hood raising and lowering unit 73 has a structure including a ball screw mechanism, for example.
處理罩16係可以於上下方向重疊之方式收容,且藉由防護罩升降單元73使兩個第一防護罩71及第二防護罩72中的至少一個升降而進行處理罩16的展開及收容。 The processing cover 16 can be accommodated in an overlapping manner in the up-down direction, and at least one of the two first protective covers 71 and the second protective cover 72 can be raised and lowered by the protective cover lifting unit 73 to unfold and store the processing cover 16.
內側的第一防護罩71係圍繞自轉夾具5的周圍,且具有相對於自轉夾具5所致使的基板W的旋轉軸線A1大致旋轉 對稱的形狀。如圖2C所示,第一防護罩71係一體性地具備有:底部74,係俯視觀看時呈圓環狀;圓筒狀的內壁部75,係從該底部74內周緣朝上方立起;圓筒狀的外壁部76,係從底部74的外周緣朝上方立起;以及圓筒狀的導引部77,係在內周緣與外周緣之間從所對應的底部74的一部分朝上方立起。 The first protective cover 71 on the inner side surrounds the circumference of the rotation jig 5 and has a rotation substantially relative to the rotation axis A1 of the substrate W caused by the rotation jig 5. Symmetrical shape. As shown in FIG. 2C, the first protective cover 71 is integrally provided with a bottom portion 74 that is annular in a plan view, and a cylindrical inner wall portion 75 that rises upward from the inner periphery of the bottom portion 74. A cylindrical outer wall portion 76 standing upward from the outer peripheral edge of the bottom portion 74; and a cylindrical guide portion 77 tied between the inner peripheral edge and the outer peripheral edge from a portion of the corresponding bottom portion 74 upward Stand up.
導引部77係包含有:圓筒狀的本體部78,係從底部74立起;以及筒狀的上端部79,係從該本體部78的上端描繪出圓滑的圓弧,並朝中心側(接近旋轉軸線A1之方向)斜上方延伸。 The guide portion 77 includes a cylindrical body portion 78 standing up from the bottom 74, and a cylindrical upper end portion 79 that draws a smooth arc from the upper end of the body portion 78 and faces the center side. (Direction close to the rotation axis A1) extends diagonally upward.
內壁部75與導引部77之間係被第一排液槽80區劃,該第一排液槽80係用以收集已使用於基板W的處理之處理液(硫酸含有液、洗淨藥液以及水)並予以排液。於第一排液槽80的底部的最低的部位連接有從未圖示的負壓源延伸之排氣排液配管81。藉此,第一排液槽80的內部係被強制性地排氣,於第一排液槽80所收集的處理液以及第一排液槽80內的氛圍係經由排氣排液配管81排出。與氛圍一起排出的處理液係藉由夾設於排氣排液配管81的中途部的氣液分離器97而從氛圍分離。於排氣排液配管81經由氣液分離器97並分別經由排液分歧閥85連接有複數個排液分歧配管(硫酸含有液用分歧配管82、洗淨藥液用分歧配管83以及水用分歧配管84)。於各個排液分歧閥85分別包含有用以偵測該排液分歧閥85處於閉狀態的狀況之第二閥關閉感測器95。 The inner wall portion 75 and the guide portion 77 are partitioned by a first liquid discharge tank 80, which is used to collect a processing liquid (sulfuric acid-containing liquid, cleaning agent) used for processing of the substrate W. Liquid and water) and drained. An exhaust liquid discharge pipe 81 extending from a negative pressure source (not shown) is connected to the lowest portion of the bottom of the first liquid discharge tank 80. Thereby, the inside of the first liquid discharge tank 80 is forcibly exhausted, and the processing liquid collected in the first liquid discharge tank 80 and the atmosphere in the first liquid discharge tank 80 are discharged through the exhaust liquid discharge pipe 81 . The treatment liquid discharged together with the atmosphere is separated from the atmosphere by a gas-liquid separator 97 sandwiched in the middle of the exhaust liquid discharge pipe 81. A plurality of discharge branch pipes (a branch pipe 82 for a sulfuric acid-containing liquid, a branch pipe 83 for a cleaning chemical liquid, and a branch for water) are connected to the exhaust liquid discharge pipe 81 via a gas-liquid separator 97 and each through a discharge branch valve 85 Piping 84). Each of the liquid discharge branch valves 85 includes a second valve closing sensor 95 for detecting a state in which the liquid discharge branch valve 85 is closed.
在後述的硫酸含有液步驟(圖4的步驟S3)中,僅排液分 歧閥85中之硫酸含有液用分歧配管82用的排液分歧閥85被開啟,流通於排氣排液配管81之處理液係被供給至硫酸含有液用分歧配管82後,輸送至用以將硫酸含有液予以排液處理之處理裝置(未圖示)。 In the sulfuric acid-containing liquid step described later (step S3 in FIG. 4), only the liquid The drain branch valve 85 for the branch pipe 82 for the sulfuric acid-containing liquid in the branch valve 85 is opened, and the processing liquid flowing through the exhaust drain pipe 81 is supplied to the branch pipe 82 for the sulfuric acid-containing liquid, and is sent to A processing device (not shown) for treating a sulfuric acid-containing liquid by draining the liquid.
此外,在後述的第一清洗步驟及第二清洗步驟(圖4的步驟S4及步驟S6)中,僅排液分歧閥85中之水用分歧配管84用的排液分歧閥85被開啟,流通於排氣排液配管81之處理液係被供給至水用分歧配管84後,輸送至用以將水予以排液處理之處理裝置(未圖示)。 In the first and second cleaning steps (steps S4 and S6 in FIG. 4) described below, only the drain branch valve 85 for the branch branch pipe 84 for water in the drain branch valve 85 is opened and circulated. The processing liquid in the exhaust liquid discharge pipe 81 is supplied to the water branching pipe 84 and then sent to a processing device (not shown) for draining water.
此外,在後述的洗淨藥液步驟(圖4的步驟S5)中,僅排液分歧閥85中之洗淨藥液用分歧配管83用的排液分歧閥85被開啟,流通於排氣排液配管81之處理液係被供給至洗淨藥液用分歧配管83後,輸送至用以將洗淨藥液予以排液處理之處理裝置(未圖示)。 In the cleaning chemical solution step described later (step S5 in FIG. 4), only the liquid drainage branch valve 85 for the cleaning chemical liquid branch pipe 83 in the liquid drainage branch valve 85 is opened and circulates through the exhaust gas discharge valve. The processing liquid of the liquid piping 81 is supplied to the cleaning chemical liquid branch piping 83 and is then transferred to a processing device (not shown) for draining the cleaning chemical liquid.
此外,導引部77與外壁部76之間係作為用以收集並回收已使用於基板W的處理的有機溶劑之第二排液槽86。在第二排液槽86中,例如於底部連接有排氣配管87的一端。藉此,第二排液槽86的內部係被強制性地排氣,第二排液槽86內的氛圍係經由排氣配管87排出。 In addition, a space between the guide portion 77 and the outer wall portion 76 is a second liquid discharge tank 86 for collecting and recovering the organic solvent used in the processing of the substrate W. In the second liquid discharge tank 86, for example, one end of an exhaust pipe 87 is connected to the bottom. Thereby, the inside of the second liquid discharge tank 86 is forcibly exhausted, and the atmosphere in the second liquid discharge tank 86 is discharged through the exhaust pipe 87.
排氣配管87的另一端係連接至未圖示的負壓源。於排氣配管87夾設有用以將排氣配管87予以開閉之排氣閥101。於排氣閥101設置有用以偵測該排氣閥101處於開啟狀態的情況之閥開啟感測器21。 The other end of the exhaust pipe 87 is connected to a negative pressure source (not shown). An exhaust valve 101 for opening and closing the exhaust pipe 87 is interposed between the exhaust pipe 87. A valve opening sensor 21 is provided on the exhaust valve 101 to detect that the exhaust valve 101 is in an open state.
外側的第二防護罩72係具有相對於旋轉軸線A1大致旋 轉對稱的形狀。第二防護罩72係在第一防護罩71的導引部77的外側中圍繞自轉夾具5的周圍。於第二防護罩72的上端部88形成有直徑比被自轉夾具5所保持的基板W還大之開口89,第二防護罩72的上端90係成為用以區劃開口89之開口端。 The second protective cover 72 on the outer side has a substantially rotating position with respect to the rotation axis A1. Symmetrical shape. The second protective cover 72 surrounds the periphery of the rotation jig 5 in the outer side of the guide portion 77 of the first protective cover 71. An opening 89 having a diameter larger than that of the substrate W held by the rotation jig 5 is formed in the upper end portion 88 of the second protective cover 72. The upper end 90 of the second protective cover 72 is an open end for distinguishing the opening 89.
第二防護罩72係具有:下端部91,係作成與導引部77同軸圓筒狀;筒狀的上端部88,係從下端部91的上端描繪出圓滑的圓弧,並朝中心側(接近旋轉軸線A1的方向)斜上方延伸;以及折返部92,係將上端部88的前端部朝下方折返而形成。 The second protective cover 72 has a lower end portion 91 which is formed in a cylindrical shape coaxial with the guide portion 77, and a cylindrical upper end portion 88 which draws a smooth arc from the upper end of the lower end portion 91 and faces the center side ( The direction close to the rotation axis A1) extends obliquely upward, and the folded-back portion 92 is formed by folding the front end portion of the upper end portion 88 downward.
下端部91係位於第二排液槽86上,並在第一防護罩71與第二防護罩72最接近的狀態下形成為收容於第二排液槽86之長度。此外,上端部88係以與第一防護罩71的導引部77的上端部79在上下方向重疊之方式設置,並以在第一防護罩71與第二防護罩72最接近的狀態下相對於導引部77的上端部79保持非常微小的間隙而接近之方式形成。折返部92係以第一防護罩71與第二防護罩72最接近的狀態下與導引部77的上端部79於水平方向重疊之方式形成。 The lower end portion 91 is located on the second liquid discharge tank 86 and is formed to be accommodated in the second liquid discharge tank 86 in a state where the first protective cover 71 and the second protective cover 72 are closest to each other. In addition, the upper end portion 88 is provided so as to overlap the upper end portion 79 of the guide portion 77 of the first protective cover 71 in the vertical direction, and faces the first protective cover 71 and the second protective cover 72 closest to each other. The upper end portion 79 of the guide portion 77 is formed so as to approach it with a very small gap. The folded-back portion 92 is formed so as to overlap the upper end portion 79 of the guide portion 77 in the horizontal direction in a state where the first protective cover 71 and the second protective cover 72 are closest to each other.
如圖2A所示,防護罩升降單元73係在上位置與下位置之間使各個第一防護罩71及第二防護罩72升降,該上位置係防護罩的上端部位於比基板W還上方之位置,該下位置係防護罩的上端部位於比基板W還下方之位置。防護罩升降單元73係可在上位置與下位置之間的任意的位置保持各個第一防護罩71及第二防護罩72。朝基板W供給處理液以及基 板W的乾燥係在第一防護罩71及第二防護罩72中的任一者與基板W的周端面相對向的狀態下進行。 As shown in FIG. 2A, the protective cover lifting unit 73 lifts each of the first protective cover 71 and the second protective cover 72 between an upper position and a lower position. The upper end of the protective cover is located above the substrate W. The lower position is a position where the upper end portion of the protective cover is located below the substrate W. The shield lifting unit 73 can hold each of the first shield 71 and the second shield 72 at any position between the upper position and the lower position. Supplying a processing liquid and a substrate to the substrate W The drying of the plate W is performed in a state where any one of the first protective cover 71 and the second protective cover 72 faces the peripheral end surface of the substrate W.
如圖5A等所示,在使內側的第一防護罩71與基板W的周端面相對向之情形中,第一防護罩71及第二防護罩72皆配置於上位置。在此狀態下,折返部92係與導引部77的上端部79於水平方向重疊。 As shown in FIG. 5A and the like, in a case where the inner first protective cover 71 and the peripheral end surface of the substrate W face each other, both the first protective cover 71 and the second protective cover 72 are arranged at the upper positions. In this state, the folded-back portion 92 overlaps the upper end portion 79 of the guide portion 77 in the horizontal direction.
與第一防護罩71關連地設置有:防護罩上位置感測器93,係用以檢測朝向第一防護罩71的上位置的配置;以及防護罩下位置感測器94,係用以檢測朝向第一防護罩71的上位置的配置。 Associated with the first protective cover 71 are provided: a position sensor 93 on the protective cover, which is used to detect the configuration toward the upper position of the first protective cover 71; and a position sensor 94 on the protective cover, which is used to detect Arrangement toward the upper position of the first protective cover 71.
另一方面,如圖2A及圖5G等所示,在使外側的第二防護罩72與基板W的周端面相對向之情形中,第二防護罩72係配置於上位置,且第一防護罩71係配置於下位置。 On the other hand, as shown in FIG. 2A, FIG. 5G, and the like, in a case where the outer second protective cover 72 and the peripheral end surface of the substrate W face each other, the second protective cover 72 is disposed at an upper position, and the first protective The cover 71 is arranged in a lower position.
圖3係用以說明基板處理裝置1的主要部分的電性構成之方塊圖。 FIG. 3 is a block diagram illustrating the electrical configuration of the main parts of the substrate processing apparatus 1.
控制裝置3係例如使用微電腦(microcomputer)所構成。控制裝置3係具備有CPU(Central Processing Unit;中央處理器)等運算單元、固態記憶體器件(solid-state memory device)、硬碟驅動器等記憶單元以及輸入輸出單元。於記憶單元記憶有用以讓運算單元執行之程式。 The control device 3 is configured using, for example, a microcomputer. The control device 3 is provided with a computing unit such as a CPU (Central Processing Unit), a memory unit such as a solid-state memory device, a hard disk drive, and an input-output unit. The memory unit is used to memorize the program for the arithmetic unit to execute.
控制第二噴嘴移動單元63、68、阻隔板旋轉單元31、阻隔板升降單元32以及防護罩升降單元73等的動作。此外,控制裝置3係將第一有機溶劑閥35、第二有機溶劑閥36、第一水閥46、吸引閥51、驅動閥54、第二水閥57、惰性氣體 閥59、硫酸含有液閥62、洗淨藥液閥67、排液分歧閥85等予以開閉。再者,於控制裝置3輸入有第一閥開啟感測器21的檢測輸出、阻隔板接近位置感測器33的檢測輸出、閥關閉感測器37的檢測輸出、第一液體偵測感測器43的檢測輸出、第二液體偵測感測器45的檢測輸出、噴嘴退避感測器64的檢測輸出、防護罩上位置感測器93的檢測輸出、防護罩下位置感測器94的檢測輸出以及第二閥關閉感測器95的檢測輸出等。 The operations of the second nozzle moving units 63 and 68, the baffle blocking rotation unit 31, the baffle lifting unit 32, the shield lifting unit 73, and the like are controlled. The control device 3 includes a first organic solvent valve 35, a second organic solvent valve 36, a first water valve 46, a suction valve 51, a drive valve 54, a second water valve 57, and an inert gas. The valve 59, the sulfuric acid-containing liquid valve 62, the cleaning chemical liquid valve 67, and the liquid discharge branch valve 85 are opened and closed. Furthermore, the control device 3 is input with the detection output of the first valve opening sensor 21, the detection output of the barrier proximity position sensor 33, the detection output of the valve closing sensor 37, and the first liquid detection sensor. Detection output of the sensor 43, detection output of the second liquid detection sensor 45, detection output of the nozzle retreat sensor 64, detection output of the position sensor 93 on the hood, and position sensor 94 of the under hood The detection output and the detection output of the second valve closing sensor 95 and the like.
圖4係用以說明處理單元2所為之第一基板處理例之流程圖。圖5A至圖5H係用以說明第一基板處理例之示意性的圖。 FIG. 4 is a flowchart illustrating a first substrate processing example performed by the processing unit 2. 5A to 5H are schematic diagrams for explaining a first substrate processing example.
以下,參照圖2A至圖4說明第一基板處理例。適當地參照圖5A至圖5H。第一基板處理例係用以去除已形成於基板W的上表面的阻劑(resist)之阻劑去除處理。如以下所述,第一基板處理例係包含有:硫酸含有液步驟S3,係使用SPM等硫酸含有液來處理基板W;以及有機溶劑步驟S7,係使用IPA等液體的有機溶劑來處理基板W。硫酸含有液與有機溶劑係接觸而伴隨著危險(在此情形中為急遽的反應)之藥劑流體(藥液或者是含有藥劑成分的氣體)的組合。 Hereinafter, a first substrate processing example will be described with reference to FIGS. 2A to 4. 5A to 5H are appropriately referred to. The first substrate processing example is a resist removal process for removing a resist formed on the upper surface of the substrate W. As described below, the first substrate processing example includes: a sulfuric acid-containing liquid step S3, which uses a sulfuric acid-containing liquid such as SPM to process the substrate W; and an organic solvent step S7, which uses a liquid organic solvent such as IPA to process the substrate W . Sulfuric acid-containing liquid comes in contact with an organic solvent, and is a combination of a pharmaceutical fluid (medicine liquid or a gas containing a pharmaceutical component) which is dangerous (a sudden reaction in this case).
在藉由處理單元2對基板W施予阻劑去除處理時,以高劑量進行離子植入處理後的基板W係搬入至處理腔室4的內部(圖4的步驟S1)。被搬入的基板W係未接受用以將阻劑予以灰化(ashing)之處理的基板。此外,於基板W的表面形成有細微且高縱橫比(aspect ratio)的細微圖案。 When the substrate W is subjected to a resist removal treatment by the processing unit 2, the substrate W subjected to the ion implantation processing at a high dose is carried into the processing chamber 4 (step S1 in FIG. 4). The carried-in substrate W is a substrate that has not been subjected to a treatment for ashing the resist. In addition, a fine pattern with a high aspect ratio is formed on the surface of the substrate W.
具體而言,控制裝置3係使對向構件7(亦即阻隔板26及中心軸噴嘴29)退避至退避位置,並使全部的移動噴嘴(亦即硫酸含有液體噴嘴60及洗淨藥液噴嘴65)從自轉夾具5的上方退避,且使第一防護罩71及第二防護罩72下降至下位置。結果,第一防護罩71及第二防護罩72的上端皆配置於比基板W的保持位置還下方。在此狀態下,使正保持著基板W的基板搬運機器人CR(參照圖1)的手部H(參照圖1)進入至處理腔室4的內部,藉此基板W係在基板W的表面(阻劑形成面)朝向上方的狀態下被授受至自轉夾具5。之後,基板W被保持於自轉夾具5(基板保持步驟)。 Specifically, the control device 3 retracts the opposing member 7 (that is, the barrier plate 26 and the central axis nozzle 29) to the retracted position, and makes all the moving nozzles (that is, the sulfuric acid-containing liquid nozzle 60 and the cleaning chemical liquid nozzle) 65) Retreat from above the rotation jig 5 and lower the first protective cover 71 and the second protective cover 72 to the lower position. As a result, the upper ends of the first protective cover 71 and the second protective cover 72 are both arranged below the holding position of the substrate W. In this state, the hand H (see FIG. 1) of the substrate transfer robot CR (see FIG. 1) holding the substrate W is entered into the processing chamber 4, whereby the substrate W is attached to the surface of the substrate W ( The resist forming surface) is transferred to the rotation jig 5 in a state where it faces upward. After that, the substrate W is held by the rotation jig 5 (a substrate holding step).
之後,控制裝置3係藉由自轉馬達22使基板W開始旋轉。基板W係上升達至預先設定的液體處理速度(在1rpm至500rpm的範圍內,例如約100rpm),並維持於該液體處理速度。此外,控制裝置3係控制防護罩升降單元73,並使第一防護罩71及第二防護罩72分別上升至上位置,且使第一防護罩71與基板W的周端面相對向。 After that, the control device 3 starts the rotation of the substrate W by the rotation motor 22. The substrate W is raised to a predetermined liquid processing speed (in the range of 1 rpm to 500 rpm, for example, about 100 rpm), and is maintained at the liquid processing speed. In addition, the control device 3 controls the shield lifting unit 73 and raises the first shield 71 and the second shield 72 to the upper positions, respectively, and makes the first shield 71 and the peripheral end surface of the substrate W face each other.
當基板W的旋轉速度達至液體處理速度時,接著進行除電步驟(圖4的步驟S2),該除電步驟係用以將碳酸水供給至基板W的上表面並將基板W予以除電。具體而言,控制裝置3係將第二水閥57開啟。藉此,如圖5A所示,從第二噴嘴11的第二噴出口10朝基板W的上表面中央部噴出碳酸水。從第二噴嘴11噴出的碳酸水係著液至基板W的上表面中央部,並承受基板W的旋轉所致使的離心力而在基板W的上表面上朝基板W的周緣部流動。 When the rotation speed of the substrate W reaches the liquid processing speed, a static elimination step (step S2 in FIG. 4) is performed. The static elimination step is to supply carbonated water to the upper surface of the substrate W and to remove the substrate W. Specifically, the control device 3 opens the second water valve 57. Thereby, as shown in FIG. 5A, carbonated water is sprayed from the second discharge port 10 of the second nozzle 11 toward the center portion of the upper surface of the substrate W. The carbonated water sprayed from the second nozzle 11 flows into the center portion of the upper surface of the substrate W, and receives centrifugal force caused by the rotation of the substrate W, and flows toward the peripheral edge portion of the substrate W on the upper surface of the substrate W.
此外,在本實施形態中,除電步驟S2係藉由下述方式而實現:不僅是從第二噴嘴11噴出碳酸水,亦從第一噴嘴9的第一噴出口8噴出碳酸水。亦即,除電步驟S2係包含有第一水置換步驟T1,該第一水置換步驟T1係用以以碳酸水置換有機溶劑配管34的內部。具體而言,控制裝置3係與除電步驟S2的開始同步地,將第二有機溶劑閥36開啟並將第一有機溶劑閥35及吸引閥51關閉,且將第一水閥46開啟。藉此,來自第一水配管39的碳酸水係被供給至有機溶劑下游側部分40。在於有機溶劑下游側部分40的內壁附著有已於前次的阻劑去除處理時所使用的IPA的液滴之情形中,該IPA的液滴係被碳酸水置換。供給至有機溶劑下游側部分40的碳酸水係從第一噴嘴9噴出並著液至基板W的上表面中央部,並承受基板W的旋轉所致使的離心力而從基板W的上表面上朝基板W的周緣部流動。此外,在已於前次的阻劑去除處理時所使用的IPA氛圍混入至有機溶劑下游側部分40的管內之情形中,亦藉由碳酸水去除。 In addition, in this embodiment, the static elimination step S2 is implemented by not only ejecting carbonated water from the second nozzle 11 but also ejecting carbonated water from the first ejection port 8 of the first nozzle 9. That is, the static elimination step S2 includes a first water replacement step T1, and the first water replacement step T1 is to replace the inside of the organic solvent pipe 34 with carbonated water. Specifically, the control device 3 opens the second organic solvent valve 36, closes the first organic solvent valve 35 and the suction valve 51, and opens the first water valve 46 in synchronization with the start of the neutralization step S2. Thereby, the carbonated water system from the first water pipe 39 is supplied to the organic solvent downstream side portion 40. In the case where droplets of the IPA used in the previous resist removal treatment are adhered to the inner wall of the organic solvent downstream portion 40, the droplets of the IPA are replaced with carbonated water. The carbonated water supplied to the downstream portion 40 of the organic solvent is ejected from the first nozzle 9 and impinges on the center of the upper surface of the substrate W, and receives centrifugal force caused by the rotation of the substrate W toward the substrate from the upper surface of the substrate W. The peripheral portion of W flows. In addition, in the case where the IPA atmosphere used in the previous resist removal treatment was mixed into the tube of the organic solvent downstream portion 40, it was also removed by carbonated water.
被供給至基板W的上表面之碳酸水係從基板W的周緣部朝基板W的側方飛散,並被第一防護罩71的內壁接住。接著,於第一防護罩71的內壁流動並流下的碳酸水係被收集至第一排液槽80後,被導引至排氣排液配管81。在除電步驟S2中,將水用分歧配管84用的排液分歧閥85開啟且將硫酸含有液用分歧配管82用的排液分歧閥85及洗淨藥液用分歧配管83用的排液分歧閥85關閉,藉此通過排氣排液配管81之液體的流通目的地係被設定至水用分歧配管84。因此, 在除電步驟S2中,導引至排氣排液配管81的碳酸水係通過水用分歧配管84,並被導引至用以將碳酸水予以排液處理之處理裝置(未圖示)。在已於前次的阻劑去除處理時使用的IPA的液滴附著於第一防護罩71的內壁、第一排液槽80以及/或者排氣排液配管81的管壁之情形中,該IPA的液滴係被碳酸水沖洗。 The carbonated water supplied to the upper surface of the substrate W is scattered from the peripheral edge portion of the substrate W toward the side of the substrate W, and is caught by the inner wall of the first protective cover 71. Next, the carbonated water system flowing and flowing down the inner wall of the first protective cover 71 is collected in the first liquid discharge tank 80 and then guided to the exhaust liquid discharge pipe 81. In the neutralization step S2, the drain branch valve 85 for the branch pipe for water 84 is opened, and the drain branch valve 85 for the branch pipe 82 for sulfuric acid-containing liquid and the branch pipe 83 for the cleaning liquid branch branch are opened. The valve 85 is closed, whereby the flow destination of the liquid through the exhaust liquid discharge pipe 81 is set to the water branch pipe 84. therefore, In the static elimination step S2, the carbonated water guided to the exhaust liquid discharge pipe 81 passes through the water branch pipe 84 and is guided to a processing device (not shown) for draining the carbonated water. In the case where the droplets of IPA used in the previous resist removal process are attached to the inner wall of the first protective cover 71, the first drain tank 80, and / or the tube wall of the exhaust drain pipe 81, The droplets of this IPA were washed with carbonated water.
藉由朝基板W的上表面供給碳酸水,於基板W的上表面形成有碳酸水的液膜。碳酸水的液膜係接液至基板W的上表面,藉此對被保持於自轉夾具5的基板W進行除電。在本實施形態中,由於除電步驟S2包含有第一水置換步驟T1,因此與以與除電步驟S2不同的時序進行第一水置換步驟T1的情形相比,能縮短阻劑去除處理整體的處理時間。 By supplying carbonated water to the upper surface of the substrate W, a liquid film of carbonated water is formed on the upper surface of the substrate W. The liquid film of carbonated water is connected to the upper surface of the substrate W, thereby removing the substrate W held by the rotation jig 5. In this embodiment, since the static elimination step S2 includes the first water replacement step T1, the overall process of the resist removal process can be shortened compared with the case where the first water replacement step T1 is performed at a timing different from that of the static elimination step S2. time.
接著,當從碳酸水開始噴出經過預定時間時,如圖5B所示,控制裝置3係一邊將第二水閥57維持在開啟的狀態一邊將第一水閥46關閉,且一邊維持從第二噴嘴11噴出碳酸水一邊使第一噴嘴9停止噴出碳酸水。 Next, when a predetermined time has elapsed from the start of the carbonated water spray, as shown in FIG. 5B, the control device 3 closes the first water valve 46 while maintaining the second water valve 57 in an open state, and maintains the second water valve 57 from the second When the nozzle 11 ejects carbonated water, the first nozzle 9 stops ejecting carbonated water.
停止從第一噴嘴9噴出碳酸水後,執行用以吸引有機溶劑配管34內的碳酸水之第一水吸引步驟T2(第一吸引步驟)。該第一水吸引步驟T2係用以藉由吸引單元55吸引在第一水置換步驟T1後存在於有機溶劑配管34的內部的碳酸水。 After stopping the ejection of carbonated water from the first nozzle 9, the first water suction step T2 (first suction step) for sucking carbonated water in the organic solvent pipe 34 is performed. The first water suction step T2 is used to suck carbonated water existing in the organic solvent pipe 34 after the first water replacement step T1 by the suction unit 55.
具體而言,控制裝置3係在第一水置換步驟T1結束後,將第二有機溶劑閥36開啟且將第一有機溶劑閥35及第一水閥46關閉,並將吸引閥51開啟。藉此,如圖5B所示,有機溶劑下游側部分40及水下游側部分50的內部係被排氣, 且存在於有機溶劑下游側部分40及水下游側部分50的碳酸水係被吸入(吸引)至吸引配管49。碳酸水的吸引係進行至碳酸水的前端面後退至配管內的預定的待機位置(例如設定於吸引配管49或水下游側部分50)為止。當碳酸水的前端面後退至待機位置時,控制裝置3係將吸引閥51關閉。藉此,結束第一水置換步驟T1。 Specifically, after the first water replacement step T1 is completed, the control device 3 opens the second organic solvent valve 36 and closes the first organic solvent valve 35 and the first water valve 46, and opens the suction valve 51. Thereby, as shown in FIG. 5B, the insides of the organic solvent downstream portion 40 and the water downstream portion 50 are exhausted, The carbonated water system existing in the organic solvent downstream portion 40 and the water downstream portion 50 is sucked (sucked) into the suction pipe 49. The carbonated water is sucked until the front end surface of the carbonated water is retracted to a predetermined standby position in the pipe (for example, it is set to the suction pipe 49 or the water downstream side portion 50). When the front end surface of the carbonated water is retracted to the standby position, the control device 3 closes the suction valve 51. This completes the first water replacement step T1.
於第一水置換步驟T1結束後執行第一水吸引步驟T2,藉此於第一水吸引步驟T2執行後不會於有機溶劑配管34的內部存在碳酸水。藉此,能抑制或防止第一水置換步驟T1結束後碳酸水從第一噴嘴9落液。 The first water suction step T2 is performed after the first water replacement step T1 is completed, so that there is no carbonated water inside the organic solvent pipe 34 after the first water suction step T2 is performed. This can suppress or prevent the carbonated water from falling from the first nozzle 9 after the first water replacement step T1 is completed.
當從碳酸水開始噴出經過預定時間時,控制裝置3係將第一水閥46關閉,停止從第二噴嘴11噴出碳酸水。藉此,結束除電步驟S2。 When a predetermined period of time has elapsed since the carbonated water started to be sprayed, the control device 3 closes the first water valve 46 to stop the carbonated water from being sprayed from the second nozzle 11. Thereby, the static elimination step S2 is completed.
此外,在本實施形態中,由於並行地進行第一水吸引步驟T2與除電步驟S2的一部分(從第二噴嘴9噴出碳酸水),因此與除電步驟S2結束後另外進行第一水吸引步驟T2的情形相比,能縮短阻劑去除處理整體的處理時間。接著,控制裝置3係進行硫酸含有液步驟(第二處理步驟,圖4的步驟S3),該硫酸含有液步驟係將高溫的SPM供給至基板W的上表面。在硫酸含有液步驟S3中,控制裝置3係將來自硫酸含有液噴嘴60的高溫的SPM供給至基板W的上表面中央部,俾從基板W的表面剝離阻劑。 In addition, in this embodiment, since the first water suction step T2 and a part of the electricity removal step S2 are performed in parallel (the carbonated water is ejected from the second nozzle 9), the first water suction step T2 is additionally performed after the electricity removal step S2 ends. Compared with the case, the overall processing time of the resist removal process can be shortened. Next, the control device 3 performs a sulfuric acid-containing liquid step (a second processing step, step S3 of FIG. 4). This sulfuric acid-containing liquid step is to supply high-temperature SPM to the upper surface of the substrate W. In the sulfuric acid-containing liquid step S3, the control device 3 supplies the high-temperature SPM from the sulfuric acid-containing liquid nozzle 60 to the center portion of the upper surface of the substrate W, and peels off the resist from the surface of the substrate W.
具體而言,在硫酸含有液步驟S3中,控制裝置3係控制第一噴嘴移動單元63,藉此使硫酸含有液噴嘴60從退避位 置移動至中央位置。藉此,硫酸含有液噴嘴60係配置於基板W的中央部的上方。之後,控制裝置3係將硫酸含有液閥62開啟。藉此,高溫(例如約170℃至約200℃)的SPM係從硫酸含有液配管61供給至硫酸含有液噴嘴60,並從該硫酸含有液噴嘴60的噴出口噴出高溫的SPM。從硫酸含有液噴嘴60噴出的高溫的SPM係著液至基板W的上表面的中央部,並受基板W的旋轉所為之離心力,且沿著基板W的上表面朝外側流動。藉此,如圖5C所示,基板W的上表面全域係被SPM的液膜覆蓋。藉由高溫的SPM,阻劑係從基板W的表面剝離並從該基板W的表面去除。 Specifically, in the sulfuric acid-containing liquid step S3, the control device 3 controls the first nozzle moving unit 63, thereby moving the sulfuric acid-containing liquid nozzle 60 from the retreat position. Move to the center position. Thereby, the sulfuric acid containing liquid nozzle 60 is arrange | positioned above the center part of the board | substrate W. After that, the control device 3 opens the sulfuric acid-containing liquid valve 62. Thereby, high-temperature (for example, about 170 ° C. to about 200 ° C.) SPM is supplied from the sulfuric acid-containing liquid pipe 61 to the sulfuric acid-containing liquid nozzle 60, and high-temperature SPM is ejected from the ejection port of the sulfuric acid-containing liquid nozzle 60. The high-temperature SPM sprayed from the sulfuric acid-containing liquid nozzle 60 flows to the center of the upper surface of the substrate W, is subjected to centrifugal force due to the rotation of the substrate W, and flows outward along the upper surface of the substrate W. Thereby, as shown in FIG. 5C, the entire upper surface of the substrate W is covered with the liquid film of the SPM. With the high-temperature SPM, the resist is peeled from the surface of the substrate W and removed from the surface of the substrate W.
供給至基板W的上表面的SPM係從基板W的周緣部朝基板W的側方飛散,並被第一防護罩71的內壁接住。接著,於第一防護罩71的內壁流動並流下的SPM係被收集至第一排液槽80後,被導引至排氣排液配管81。在硫酸含有液步驟S3中,將硫酸含有液用分歧配管82用的排液分歧閥85開啟,且將洗淨藥液用分歧配管83用的排液分歧閥85及水用分歧配管84用的排液分歧閥85關閉,藉此通過排氣排液配管81之液體的流通目的地係被設定至硫酸含有液用分歧配管82。因此,在除電步驟S2中,被導引至排氣排液配管81之SPM係通過硫酸含有液用分歧配管82,並被導引至用以將硫酸含有液予以排液處理之處理裝置(未圖示)。因此,於硫酸含有液步驟S3後,於第一防護罩71的內壁、第一排液槽80以及/或者排氣排液配管81的管壁附著有SPM的液滴。 The SPM supplied to the upper surface of the substrate W is scattered from the peripheral edge portion of the substrate W toward the side of the substrate W, and is received by the inner wall of the first protective cover 71. Next, the SPM system flowing and flowing down on the inner wall of the first protective cover 71 is collected in the first liquid discharge tank 80 and then guided to the exhaust liquid discharge pipe 81. In the sulfuric acid-containing liquid step S3, the drainage branch valve 85 for the branch pipe 82 for the sulfuric acid-containing solution is opened, and the drain branch valve 85 for the branch pipe 83 for cleaning the chemical liquid and the branch pipe 84 for water are opened. The liquid discharge branch valve 85 is closed, whereby the flow destination of the liquid through the exhaust liquid discharge pipe 81 is set to the sulfuric acid-containing liquid branch pipe 82. Therefore, in the neutralization step S2, the SPM guided to the exhaust liquid discharge pipe 81 passes through the branch pipe 82 for sulfuric acid-containing liquid, and is guided to a processing device (not Icon). Therefore, after the sulfuric acid-containing liquid step S3, droplets of SPM are attached to the inner wall of the first protective cover 71, the first liquid discharge tank 80, and / or the pipe wall of the exhaust liquid discharge pipe 81.
在硫酸含有液步驟S3中,藉由朝基板W供給高溫的SPM,於基板W的上表面的周圍產生大量的SPM的霧氣(nozzle)。在硫酸含有液步驟S3中,雖然阻隔板26及中心軸噴嘴29隔著退避位置(例如阻隔板26的基板對向面6從自轉基座24的上表面隔著充分的間隔(列如約150mm)位於上方),但由於在硫酸含有液步驟S3中所使用的SPM為非常高溫(例如約170℃至約200℃),因此在硫酸含有液步驟S3中產生大量的SPM的霧氣,結果該SPM的霧氣從第一噴出口8進入至有機溶劑配管34的內部,並進入至有機溶劑配管34的內部(達至深處)。 In the sulfuric acid-containing liquid step S3, a large amount of SPM fog is generated around the upper surface of the substrate W by supplying high-temperature SPM to the substrate W. In the sulfuric acid-containing liquid step S3, the barrier plate 26 and the central axis nozzle 29 are spaced apart from each other (for example, the substrate-opposing surface 6 of the barrier plate 26 is spaced from the upper surface of the rotation base 24 at a sufficient interval (a row such as about 150 mm). ) Is located above), but since the SPM used in the sulfuric acid-containing liquid step S3 is very high temperature (for example, about 170 ° C to about 200 ° C), a large amount of mist of the SPM is generated in the sulfuric acid-containing liquid step S3, and as a result, the SPM The mist from the first injection port 8 enters the inside of the organic solvent piping 34, and enters the inside of the organic solvent piping 34 (to the depth).
在此情形中,當在前次的阻劑去除處理中所使用的IPA殘存於有機溶劑配管34的內部時(亦包括IPA的液滴附著至有機溶劑配管34的內部),在硫酸含有液步驟S3中,有已進入至有機溶劑配管34內的SPM的霧氣在有機溶劑配管34的內部與IPA接觸之虞。當SPM的霧氣在有機溶劑配管34的內部中與IPA接觸時,會有產生微粒而使有機溶劑配管34的內部成為微粒產生源之虞。 In this case, when the IPA used in the previous resist removal treatment remained in the organic solvent pipe 34 (including the droplets of IPA attached to the organic solvent pipe 34), the sulfuric acid-containing liquid step In S3, the mist of the SPM that has entered the organic solvent pipe 34 may come into contact with the IPA inside the organic solvent pipe 34. When the mist of the SPM comes into contact with the IPA in the inside of the organic solvent piping 34, particles may be generated and the inside of the organic solvent piping 34 may be a source of particle generation.
然而,在本實施形態中,由於在硫酸含有液步驟S3之前執行第一水置換步驟T1,因此在硫酸含有液步驟S3開始時,不會於有機溶劑配管34的內部殘留IPA。因此,在硫酸含有液步驟S3中,即使SPM的霧氣進入至有機溶劑配管34內,亦不會在有機溶劑配管34的內部與IPA接觸。因此,能防止在硫酸含有液步驟S3中IPA與SPM接觸,藉此能抑制或防止有機溶劑配管34的內部成為微粒產生源。 However, in this embodiment, since the first water replacement step T1 is performed before the sulfuric acid-containing liquid step S3, IPA does not remain in the organic solvent pipe 34 when the sulfuric acid-containing liquid step S3 starts. Therefore, in the sulfuric acid-containing liquid step S3, even if the mist of the SPM enters the organic solvent pipe 34, the organic solvent pipe 34 does not come into contact with the IPA. Therefore, it is possible to prevent the IPA from contacting the SPM in the sulfuric acid-containing liquid step S3, thereby suppressing or preventing the inside of the organic solvent piping 34 from being a particle generation source.
在硫酸含有液步驟S3中,當開始噴出高溫的SPM經過預先設定的期間時,結束硫酸含有液步驟S3。具體而言,控制裝置3係將硫酸含有液閥62關閉,使硫酸含有液噴嘴60停止噴出高溫的SPM後,控制第一噴嘴移動單元63,使硫酸含有液噴嘴60退避至退避位置。 In the sulfuric acid-containing liquid step S3, when the high-temperature-starting SPM starts to elapse, the sulfuric acid-containing liquid step S3 ends. Specifically, the control device 3 closes the sulfuric acid-containing liquid valve 62 to stop the sulfuric acid-containing liquid nozzle 60 from ejecting high-temperature SPM, and then controls the first nozzle moving unit 63 to retreat the sulfuric acid-containing liquid nozzle 60 to the retreat position.
接著,進行用以將作為清洗液的碳酸水供給至基板W的上表面之第一清洗步驟(圖4的步驟S4)。具體而言,控制裝置3係將第二水閥57開啟。藉此,如圖5D所示,從第二噴嘴11的第二噴出口10朝基板W的上表面中央部噴出碳酸水。從第二噴嘴11噴出的碳酸水係著液至基板W的上表面中央部,並承受基板W的旋轉所致使的離心力,且於基板W的上表面上朝基板W的周緣部流動。 Next, a first cleaning step for supplying carbonated water as a cleaning solution to the upper surface of the substrate W is performed (step S4 in FIG. 4). Specifically, the control device 3 opens the second water valve 57. Thereby, as shown in FIG. 5D, carbonated water is ejected from the second ejection port 10 of the second nozzle 11 toward the center portion of the upper surface of the substrate W. The carbonated water sprayed from the second nozzle 11 penetrates the liquid to the center of the upper surface of the substrate W, and receives the centrifugal force caused by the rotation of the substrate W, and flows toward the peripheral edge of the substrate W on the upper surface of the substrate W.
此外,在本實施形態中,第一清洗步驟S4係藉由下述方式而實現:不僅從第二噴嘴11噴出碳酸水,亦從第一噴嘴9的第一噴出口8噴出碳酸水。亦即,第一清洗步驟S4係包含有第二水置換步驟T3,該第二水置換步驟T3係與從第二噴嘴11噴出碳酸水並行地以碳酸水置換有機溶劑配管34的內部。具體而言,控制裝置3係與第一清洗步驟S4的開始同部地將第二有機溶劑閥36開啟且將第一有機溶劑閥35及吸引閥51關閉,並將第一水閥46開啟。藉此,來自第一水配管39的碳酸水係被供給至有機溶劑下游側部分40,且附著至有機溶劑下游側部分40的內壁之SPM的液滴係被碳酸水置換。供給至有機溶劑下游側部分40的碳酸水係從第一噴嘴9噴出並著液至基板W的上表面中央部,並承受基板W的旋 轉所致使的離心力,且於基板W的上表面上朝基板W的周緣部流動。 In addition, in this embodiment, the first cleaning step S4 is realized by spraying carbonated water not only from the second nozzle 11 but also from the first spray port 8 of the first nozzle 9. That is, the first cleaning step S4 includes a second water replacement step T3. The second water replacement step T3 replaces the inside of the organic solvent pipe 34 with carbonated water in parallel with the discharge of carbonated water from the second nozzle 11. Specifically, the control device 3 opens the second organic solvent valve 36, closes the first organic solvent valve 35 and the suction valve 51, and opens the first water valve 46 in the same part as the start of the first cleaning step S4. Thereby, the carbonated water system from the first water pipe 39 is supplied to the organic solvent downstream side portion 40, and the droplet system of the SPM attached to the inner wall of the organic solvent downstream side portion 40 is replaced with the carbonated water. The carbonated water supplied to the downstream portion 40 of the organic solvent is ejected from the first nozzle 9 and impinges on the central portion of the upper surface of the substrate W, and receives the rotation of the substrate W. The centrifugal force caused by the rotation flows on the upper surface of the substrate W toward the peripheral edge portion of the substrate W.
供給至基板W的上表面的碳酸水係從基板W的周緣部朝基板W的側方飛散,並被第一防護罩71的內壁接住。接著,於第一防護罩71的內壁流動並流下的碳酸水係被收集至第一排液槽80後,被導引至排氣排液配管81。在第一清洗步驟S4中,將水用分歧配管84用的排液分歧閥85開啟,且將硫酸含有液用分歧配管82用的排液分歧閥85及洗淨藥液用分歧配管83用的排液分歧閥85關閉,藉此通過排氣排液配管81之液體的流通目的地係被設定至水用分歧配管84。因此,被導引至排氣排液配管81的碳酸水係通過水用分歧配管84導引至用以將水予以排液處理之處理裝置(未圖示)。在已於硫酸含有液步驟S3中所使用之SPM的液滴附著於第一防護罩71的內壁、第一排液槽80以及/或者排氣排液配管81的管壁之情形中,該SPM的液滴係被碳酸水沖洗。 The carbonated water supplied to the upper surface of the substrate W is scattered from the peripheral edge portion of the substrate W toward the side of the substrate W, and is caught by the inner wall of the first protective cover 71. Next, the carbonated water system flowing and flowing down the inner wall of the first protective cover 71 is collected in the first liquid discharge tank 80 and then guided to the exhaust liquid discharge pipe 81. In the first cleaning step S4, the drain branch valve 85 for the branch pipe for water 84 is opened, and the branch branch valve 85 for the branch pipe 82 for sulfuric acid-containing liquid and the branch pipe 83 for the cleaning liquid are opened. The liquid discharge branch valve 85 is closed, whereby the flow destination of the liquid through the exhaust liquid discharge pipe 81 is set to the water branch pipe 84. Therefore, the carbonated water guided to the exhaust liquid discharge pipe 81 is guided to the processing device (not shown) for draining water through the water branch pipe 84. In the case where the droplets of the SPM used in the sulfuric acid-containing liquid step S3 are attached to the inner wall of the first protective cover 71, the first liquid discharge tank 80, and / or the pipe wall of the exhaust liquid discharge pipe 81, the The droplets of SPM are washed with carbonated water.
藉由供給至基板W的上表面的碳酸水將基板W上的SPM朝外側推流並排出至基板W的周圍,且基板W上的SPM的液膜係被置換成用以覆蓋基板W的上表面全域之碳酸水的液膜。亦即,藉由作為清洗液的碳酸水從基板W的上表面沖洗SPM。接著,當從開始噴出碳酸水經過預定時間時,控制裝置3係分別將第一水閥46及第二水閥57關閉,停止從第一噴嘴9及第二噴嘴11噴出碳酸水。藉此,結束第一清洗步驟。 The SPM on the substrate W is pushed outward by the carbonated water supplied to the upper surface of the substrate W and discharged to the periphery of the substrate W, and the liquid film system of the SPM on the substrate W is replaced to cover the substrate W Liquid film of carbonated water on the entire surface. That is, the SPM is rinsed from the upper surface of the substrate W with carbonated water as a cleaning solution. Next, when a predetermined period of time has elapsed from the start of ejecting carbonated water, the control device 3 closes the first water valve 46 and the second water valve 57 respectively, and stops the ejection of carbonated water from the first nozzle 9 and the second nozzle 11. Thereby, the first cleaning step is ended.
此外,在本實施形態中,由於第一清洗步驟S4包含有 第二水置換步驟T3,因此與在以與第一清洗步驟S4不同的時序進行第一水置換步驟T1的情形相比,能縮短阻劑去除處理整體的處理時間。 In addition, in this embodiment, since the first cleaning step S4 includes The second water replacement step T3 can shorten the overall processing time of the resist removal process compared to a case where the first water replacement step T1 is performed at a timing different from that of the first cleaning step S4.
此外,在第一清洗步驟S4中,無須同步地使第一噴嘴9停止噴出碳酸水與使第二噴嘴11停止噴出碳酸水,亦可在第二噴嘴11停止噴出碳酸水之前先使第一噴嘴9停止噴出碳酸水。 In addition, in the first cleaning step S4, it is not necessary to stop the first nozzle 9 from ejecting carbonated water and stop the second nozzle 11 from ejecting carbonated water simultaneously, and the first nozzle may be stopped before the second nozzle 11 stops ejecting carbonated water. 9 Stop spraying carbonated water.
第一噴嘴9及第二噴嘴11停止噴出碳酸水後,控制裝置3係進行用以將SC1供給至基板W的上表面之洗淨藥液步驟(第一處理步驟,圖4的步驟S5)。在洗淨藥液步驟S5中,控制裝置3係將來自洗淨藥液噴嘴65的SC1供給至基板W的上表面,俾從基板W的表面去除在硫酸含有液步驟S3後存在於基板W的表面的阻劑殘渣。 After the first nozzle 9 and the second nozzle 11 stop ejecting carbonated water, the control device 3 performs a cleaning chemical solution step for supplying SC1 to the upper surface of the substrate W (first processing step, step S5 in FIG. 4). In the cleaning chemical solution step S5, the control device 3 supplies SC1 from the cleaning chemical solution nozzle 65 to the upper surface of the substrate W, and removes from the surface of the substrate W the components existing on the substrate W after the sulfuric acid-containing liquid step S3. Resistor residue on the surface.
具體而言,在洗淨藥液步驟S5中,控制裝置3係控制第二噴嘴移動單元68,藉此使洗淨藥液噴嘴65從退避位置移動至處理位置。之後,控制裝置3係將洗淨藥液閥67開啟。藉此,如圖5E所示,從洗淨藥液配管66朝洗淨藥液噴嘴65供給SC1,並從洗淨藥液噴嘴65的噴出口噴出SC1。此外,控制裝置3係與從洗淨藥液噴嘴65噴出SC1並行地控制第二噴嘴移動單元68,使洗淨藥液噴嘴65在中央位置與周緣位置之間往復移動(半掃描(half scan))。藉此,能使來自洗淨藥液噴嘴65的SC1的著液位置在基板W的上表面中央部與基板W的上表面周緣部之間往復移動,藉此能使SC1的著液位置掃描基板W的上表面的全域。藉由對基板W的上表面 供給SC1,能從基板W的表面去除阻劑殘渣。 Specifically, in step S5 of the cleaning chemical solution, the control device 3 controls the second nozzle moving unit 68 to move the cleaning chemical nozzle 65 from the retreated position to the processing position. After that, the control device 3 opens the cleaning chemical liquid valve 67. As a result, as shown in FIG. 5E, SC1 is supplied from the cleaning solution pipe 66 to the cleaning solution nozzle 65, and SC1 is discharged from the discharge port of the cleaning solution nozzle 65. In addition, the control device 3 controls the second nozzle moving unit 68 in parallel with the discharge of SC1 from the cleaning liquid medicine nozzle 65, so that the cleaning liquid medicine nozzle 65 reciprocates between the central position and the peripheral position (half scan) ). Thereby, the liquid injection position of SC1 from the cleaning liquid nozzle 65 can be moved back and forth between the central portion of the upper surface of the substrate W and the peripheral portion of the upper surface of the substrate W, and the substrate can be scanned by the liquid injection position of SC1. The whole surface of W's upper surface. By facing the upper surface of the substrate W Supplying SC1 can remove the resist residue from the surface of the substrate W.
供給至基板W的上表面的SC1係從基板W的周緣部朝基板W的側方飛散,並被第一防護罩71的內壁接住。接著,於第一防護罩71的內壁流動並流下的SC1係被收集至第一排液槽80後,被導引至排氣排液配管81。在洗淨藥液步驟S5中,將洗淨藥液用分歧配管83用的排液分歧閥85開啟,且將硫酸含有液用分歧配管82用的排液分歧閥85及水用分歧配管84用的排液分歧閥85關閉,藉此通過排氣排液配管81之液體的流通目的地係被設定至洗淨藥液用分歧配管83。因此,被導引至排氣排液配管81的SC1係通過洗淨藥液用分歧配管83並被導引至用以將洗淨藥液予以排液處理之處理裝置(未圖示)。 The SC1 supplied to the upper surface of the substrate W is scattered from the peripheral edge portion of the substrate W toward the side of the substrate W, and is received by the inner wall of the first protective cover 71. Next, the SC1 system flowing and flowing down the inner wall of the first protective cover 71 is collected in the first liquid discharge tank 80 and then guided to the exhaust liquid discharge pipe 81. In the washing chemical solution step S5, the drainage branch valve 85 for the branch pipe 83 for the cleaning solution is opened, and the branch branch valve 85 for the branch pipe 82 for the sulfuric acid-containing liquid and the branch branch pipe 84 for water are opened. The liquid discharge branch valve 85 is closed, whereby the flow destination of the liquid through the exhaust liquid discharge pipe 81 is set to the cleaning liquid solution branch pipe 83. Therefore, the SC1 guided to the exhaust liquid discharge pipe 81 passes through the cleaning chemical liquid branch pipe 83 and is guided to a processing device (not shown) for draining the cleaning chemical liquid.
此外,與洗淨藥液步驟S5並行地進行用以吸引有機溶劑配管34內的碳酸水之第二水吸引步驟T4(第一吸引步驟)。該第二水吸引步驟T4係用以藉由吸引單元55吸引在有機溶劑步驟S7後存在於有機溶劑配管34的內部的碳酸水。 Further, a second water suction step T4 (first suction step) for sucking carbonated water in the organic solvent pipe 34 is performed in parallel with the washing chemical solution step S5. This second water suction step T4 is used to suck carbonated water existing in the organic solvent pipe 34 after the organic solvent step S7 by the suction unit 55.
具體而言,控制裝置3係於第二水置換步驟T3結束後,將第二有機溶劑閥36開啟且將第一有機溶劑閥35及第一水閥46關閉,並將吸引閥51開啟。藉此,如圖5E所示,有機溶劑下游側部分40及水下游側部分50的內部係被排氣,且存在於有機溶劑下游側部分40及水下游側部分50的碳酸水係被吸入(吸引)至吸引配管49。碳酸水的吸引係被進行直至碳酸水的前端面後退至配管內的預定的待機位置(例如設定於吸引配管49或水下游側部分50)為止。當碳酸水的前端面 後退至待機位置時,控制裝置3係將吸引閥51關閉。藉此,結束第二水吸引步驟T4。 Specifically, after the second water replacement step T3 is completed, the control device 3 opens the second organic solvent valve 36 and closes the first organic solvent valve 35 and the first water valve 46, and opens the suction valve 51. Thereby, as shown in FIG. 5E, the interior of the organic solvent downstream portion 40 and the water downstream portion 50 is exhausted, and the carbonated water system existing in the organic solvent downstream portion 40 and the water downstream portion 50 is sucked ( Suction) to suction pipe 49. The carbonated water is sucked until the front end surface of the carbonated water is retracted to a predetermined standby position in the pipe (for example, it is set to the suction pipe 49 or the water downstream side portion 50). When the front face of carbonated water When backing to the standby position, the control device 3 closes the suction valve 51. Thereby, the second water suction step T4 is ended.
於第二水置換步驟T3結束後執行第二水吸引步驟T4,藉此於第二水吸引步驟T4的執行後不會於有機溶劑配管34的內部存在碳酸水。藉此,能抑制或防止第二水置換步驟T3結束後碳酸水從第一噴嘴9落液。 After the second water replacement step T3 is completed, the second water suction step T4 is performed, so that after the second water suction step T4 is performed, carbonated water does not exist in the organic solvent pipe 34. This can suppress or prevent the carbonated water from falling out of the first nozzle 9 after the second water replacement step T3 is completed.
此外,在本實施形態中,由於與洗淨藥液步驟S5並行地執行第二水吸引步驟T4,因此與在以與洗淨藥液步驟S5不同的時序進行第二水置換步驟T4的情形相比,能縮短阻劑去除處理整體的處理時間。 In addition, in this embodiment, the second water suction step T4 is performed in parallel with the washing liquid solution step S5, so it is in contrast to the case where the second water replacement step T4 is performed at a timing different from the washing liquid solution step S5. As a result, the entire processing time of the resist removal process can be shortened.
當從SC1開始噴出經過預先設定的期間時,結束洗淨藥液步驟S5。具體而言,控制裝置3係將洗淨藥液閥67關閉,使洗淨藥液噴嘴65停止噴出SC1後,控制第二噴嘴移動單元68,使洗淨藥液噴嘴65退避至退避位置。 When a predetermined period has elapsed from the start of SC1, the washing solution step S5 ends. Specifically, the control device 3 closes the cleaning liquid medicine valve 67 to stop the cleaning liquid medicine nozzle 65 from ejecting SC1, and then controls the second nozzle moving unit 68 to retreat the cleaning liquid medicine nozzle 65 to the retreat position.
接著,進行用以將作為清洗液的碳酸水供給至基板W的上表面之第二清洗步驟(圖4的步驟S6)。具體而言,控制裝置3係將第二水閥57開啟。藉此,如圖5F所示,從第二噴嘴11的第二噴出口10朝基板W的上表面中央部噴出碳酸水。從第二噴嘴11噴出的碳酸水係著液至基板W的上表面中央部,並承受基板W的旋轉所致使的離心力,從基板W的上表面上朝基板W的周緣部流動。 Next, a second cleaning step is performed to supply carbonated water as a cleaning solution to the upper surface of the substrate W (step S6 in FIG. 4). Specifically, the control device 3 opens the second water valve 57. Thereby, as shown in FIG. 5F, carbonated water is ejected from the second ejection port 10 of the second nozzle 11 toward the center portion of the upper surface of the substrate W. The carbonated water sprayed from the second nozzle 11 flows into the center portion of the upper surface of the substrate W, and receives centrifugal force caused by the rotation of the substrate W, and flows from the upper surface of the substrate W toward the peripheral edge portion of the substrate W.
供給至基板W的上表面的碳酸水係從基板W的周緣部朝基板W的側方飛散,並被第一防護罩71的內壁接住。接著,於第一防護罩71的內壁流動並流下的碳酸水係被收集至 第一排液槽80後,被導引至排氣排液配管81。在第二清洗步驟S6中,將水用分歧配管84用的排液分歧閥85開啟,且將硫酸含有液用分歧配管82用的排液分歧閥85及洗淨藥液用分歧配管83用的排液分歧閥85關閉,藉此通過排氣排液配管81之液體的流通目的地係被設定至水用分歧配管84。因此,在第二清洗步驟S6中,被導引至排氣排液配管81的碳酸水係通過水用分歧配管84,並被導引至用以將水予以排液處理之處理裝置(未圖示)。 The carbonated water supplied to the upper surface of the substrate W is scattered from the peripheral edge portion of the substrate W toward the side of the substrate W, and is caught by the inner wall of the first protective cover 71. Next, the carbonated water system flowing down the inner wall of the first protective cover 71 is collected to After the first liquid discharge tank 80, it is guided to an exhaust liquid discharge pipe 81. In the second cleaning step S6, the drain branch valve 85 for the branch pipe for water 84 is opened, and the branch branch valve 85 for the branch pipe 82 for sulfuric acid-containing liquid and the branch pipe 83 for the cleaning liquid are opened. The liquid discharge branch valve 85 is closed, whereby the flow destination of the liquid through the exhaust liquid discharge pipe 81 is set to the water branch pipe 84. Therefore, in the second cleaning step S6, the carbonated water guided to the exhaust liquid discharge pipe 81 passes through the water branch pipe 84 and is guided to a processing device (not shown) for draining water.示).
基板W上的SC1係被供給至基板W的上表面之碳酸水朝外側推流並被排出至基板W的周圍,且基板W上的SC1的液膜係被置換成用以覆蓋基板W的上表面全域之碳酸水的液膜。亦即,SC1係被作為清洗液的碳酸水從基板W的上表面沖洗。接著,當第二水閥57被開啟經過預定時間時,控制裝置3係將第二水閥57關閉,使第二噴嘴11停止噴出碳酸水。藉此,結束第二清洗步驟S6。 The SC1 on the substrate W is carbonated water supplied to the upper surface of the substrate W. The carbonated water is pushed outward and discharged to the periphery of the substrate W, and the liquid film system of SC1 on the substrate W is replaced to cover the substrate W. Liquid film of carbonated water on the entire surface. That is, the SC1 system is rinsed from the upper surface of the substrate W with carbonated water as a cleaning solution. Next, when the second water valve 57 is opened for a predetermined time, the control device 3 closes the second water valve 57 to stop the second nozzle 11 from ejecting carbonated water. Thereby, the second cleaning step S6 is ended.
接著,進行用以將作為有機溶劑的IPA供給至基板W的上表面之有機溶劑步驟(圖4的步驟S7)。具體而言,控制裝置3係控制阻隔板升降單元32,將阻隔板26配置於接近位置。在阻隔板26位於接近位置時,阻隔板26係將基板W的上表面與基板W的周圍的空間阻隔。 Next, an organic solvent step for supplying IPA as an organic solvent to the upper surface of the substrate W is performed (step S7 in FIG. 4). Specifically, the control device 3 controls the baffle elevating unit 32 and arranges the baffle 26 at an approach position. When the barrier plate 26 is located at the close position, the barrier plate 26 blocks the upper surface of the substrate W from the space around the substrate W.
此外,控制裝置3係控制防護罩升降單元73,在將第一防護罩71配置於下位置的狀態下將第二防護罩72配置於上位置,使第二防護罩72與基板W的周端面相對向。此外,控制裝置3係將基板W的旋轉減速至預定的覆漿(paddle)速 度。所謂覆漿速度係指以覆漿速度使基板W旋轉時作用於基板W的上表面的液體之離心力比在清洗液與基板W的上表面之間作用的表面張力還小或者前述離心力與前述表面張力大致相抗衡般的速度。 In addition, the control device 3 controls the shield lifting unit 73 to place the second shield 72 in the upper position in a state where the first shield 71 is arranged in the lower position, so that the second shield 72 and the peripheral end surface of the substrate W Opposite. In addition, the control device 3 reduces the rotation of the substrate W to a predetermined paddle speed. degree. The slurry coating speed means that the centrifugal force of the liquid acting on the upper surface of the substrate W when the substrate W is rotated at the slurry coating speed is smaller than the surface tension acting between the cleaning solution and the upper surface of the substrate W or the centrifugal force and the surface Tension roughly rivals speed.
接著,控制裝置3係將第二有機溶劑閥36開啟且將第一水閥46及吸引閥51關閉,並將第一有機溶劑閥35開啟。藉此,如圖5G所示,來自有機溶劑供給源的IPA係被供給至第二噴嘴11,IPA係從第二噴嘴11噴出並著液至基板W的上表面。 Next, the control device 3 opens the second organic solvent valve 36, closes the first water valve 46 and the suction valve 51, and opens the first organic solvent valve 35. Thereby, as shown in FIG. 5G, the IPA system from the organic solvent supply source is supplied to the second nozzle 11, and the IPA system is ejected from the second nozzle 11 and is deposited onto the upper surface of the substrate W.
在硫酸含有液步驟S3中進入至有機溶劑配管34內之SPM的霧氣係藉由凝結而液化並形成SPM的液滴。當在有機溶劑步驟S7開始前於有機溶劑配管34的內部存在SPM的液滴時,有在有機溶劑步驟S7中被供給至有機溶劑配管34的IPA在有機溶劑配管34的內部與SPM接觸之虞。當IPA在有機溶劑配管34的內部與SPM的液滴接觸時會產生微粒,會有有機溶劑配管34的內部成為微粒產生源之虞。 The mist of the SPM that has entered the organic solvent pipe 34 in the sulfuric acid-containing liquid step S3 is liquefied by condensation to form droplets of the SPM. If droplets of SPM exist in the organic solvent pipe 34 before the start of the organic solvent step S7, the IPA supplied to the organic solvent pipe 34 in the organic solvent step S7 may come into contact with the SPM inside the organic solvent pipe 34. . When the IPA comes into contact with the droplets of the SPM inside the organic solvent piping 34, particles may be generated, and the inside of the organic solvent piping 34 may become a source of particle generation.
然而,在本實施形態中,由於在有機溶劑步驟S7之前執行第二水置換步驟T3,因此在有機溶劑步驟S7開始時不會於有機溶劑配管34的內部殘留SPM的液滴。因此,即使在該有機溶劑步驟S7中對有機溶劑配管34供給IPA,亦不會在有機溶劑配管34的內部與SPM接觸。因此,能有效地抑制或防止隨著IPA與SPM之間的接觸產生微粒,藉此能抑制或防止有機溶劑配管34的內部成為微粒產生源。 However, in this embodiment, since the second water replacement step T3 is performed before the organic solvent step S7, no droplets of SPM remain in the organic solvent pipe 34 at the beginning of the organic solvent step S7. Therefore, even if IPA is supplied to the organic solvent piping 34 in this organic solvent step S7, the organic solvent piping 34 does not come into contact with the SPM. Therefore, it is possible to effectively suppress or prevent particles from being generated due to the contact between the IPA and the SPM, thereby suppressing or preventing the inside of the organic solvent pipe 34 from being a source of particle generation.
在有機溶劑步驟S7中,藉由從第一噴嘴9噴出IPA,基 板W的上表面的液膜所含有的碳酸水係依序被置換成IPA。藉此,用以覆蓋基板W的上表面全域之IPA的液膜係在基板W的上表面保持成覆漿狀。在基板W的上表面全域的液膜大致被置換成IPA的液膜後,亦持續進行朝基板W的上表面供給IPA。因此,從基板W的周緣部排出IPA。 In the organic solvent step S7, by ejecting the IPA from the first nozzle 9, The carbonated water system contained in the liquid film on the upper surface of the plate W was sequentially replaced with IPA. Thereby, the liquid film of IPA for covering the entire area of the upper surface of the substrate W is kept in a paste-like state on the upper surface of the substrate W. After the liquid film over the entire area of the upper surface of the substrate W is replaced with the liquid film of the IPA, the IPA is continuously supplied to the upper surface of the substrate W. Therefore, the IPA is discharged from the peripheral edge portion of the substrate W.
從基板W的周緣部排出的IPA係被第二防護罩72的內壁接住。接著,於第二防護罩72的內壁流動並流下的IPA係被收集至第二排液槽86後,並被導引至排氣配管87。因此,在有機溶劑步驟S7後,於第二防護罩72的內壁、第二排液槽86以及/或者排氣配管87的管壁附著有IPA的液滴。 The IPA discharged from the peripheral edge portion of the substrate W is received by the inner wall of the second protective cover 72. Next, the IPA system flowing and flowing down on the inner wall of the second protective cover 72 is collected in the second liquid discharge tank 86 and guided to the exhaust pipe 87. Therefore, after the organic solvent step S7, droplets of IPA are attached to the inner wall of the second protective cover 72, the second liquid discharge tank 86, and / or the pipe wall of the exhaust pipe 87.
當從IPA開始噴出經過預先設定的期間時,控制裝置3係將第一有機溶劑閥35關閉,使第一噴嘴9停止噴出IPA。藉此,結束有機溶劑步驟S7。 When a predetermined period of time has passed from the start of the discharge from the IPA, the control device 3 closes the first organic solvent valve 35 to stop the first nozzle 9 from discharging the IPA. This completes the organic solvent step S7.
接著,進行用以使基板W乾燥之離心法脫水(spin-drying)步驟(圖4的步驟S8)。具體而言,控制裝置3係控制阻隔板升降單元32,將阻隔板26配置於接近位置。此外,在此狀態下,控制裝置3係控制自轉馬達22,藉此如圖5H所示,使基板W加速達至比從硫酸含有液步驟S3至有機溶劑步驟S7為止的各個步驟中的旋轉速度還大之乾燥旋轉速度(例如數千rpm),並以該乾燥旋轉速度使基板W旋轉。藉此,大的離心力係施加至基板W上的液體,附著至基板W的液體係被甩離至基板W的周圍。如此,從基板W去除液體,使基板W乾燥。此外,控制裝置3係控制阻隔板旋轉單元31, 使阻隔板26於基板W的旋轉方向高速地旋轉。 Next, a spin-drying step for drying the substrate W is performed (step S8 in FIG. 4). Specifically, the control device 3 controls the baffle elevating unit 32 and arranges the baffle 26 at an approach position. Further, in this state, the control device 3 controls the rotation motor 22, thereby accelerating the substrate W to a rotation speed in each step from the sulfuric acid-containing liquid step S3 to the organic solvent step S7, as shown in FIG. 5H. The drying rotation speed (for example, several thousand rpm) is also large, and the substrate W is rotated at the drying rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid system attached to the substrate W is thrown away from the periphery of the substrate W. In this manner, the liquid is removed from the substrate W, and the substrate W is dried. In addition, the control device 3 controls the baffle rotating unit 31, The barrier plate 26 is rotated at a high speed in the rotation direction of the substrate W.
此外,與離心力脫水法步驟S8並行地執行用以吸引有機溶劑配管34內的有機溶劑之有機溶劑吸引步驟T5(第二吸引步驟)。該有機溶劑吸引步驟T5係用以藉由吸引單元55吸引在有機溶劑步驟S7後存在於有機溶劑配管34的內部的有機溶劑。 Further, an organic solvent suction step T5 (second suction step) for sucking the organic solvent in the organic solvent pipe 34 is performed in parallel with the centrifugal dehydration method step S8. The organic solvent suction step T5 is used to suck the organic solvent existing in the organic solvent pipe 34 after the organic solvent step S7 by the suction unit 55.
具體而言,控制裝置3係在有機溶劑步驟S7結束後,將第二有機溶劑閥36開啟且將第一有機溶劑閥35及第一水閥46關閉,並將吸引閥51開啟。藉此,有機溶劑下游側部分40及水下游側部分50的內部係被排氣,且如圖5H所示,存在於有機溶劑下游側部分40及水下游側部分50的IPA係被吸入(吸引)至吸引配管49。IPA的吸引係進行直至IPA的前端面後退至配管內的預定的待機位置(例如設定於吸引配管49或水下游側部分50)為止。當IPA的前端面後退至待機位置時,控制裝置3係將吸引閥51關閉。 Specifically, after the organic solvent step S7 is completed, the control device 3 opens the second organic solvent valve 36 and closes the first organic solvent valve 35 and the first water valve 46, and opens the suction valve 51. Thereby, the internal systems of the organic solvent downstream portion 40 and the water downstream portion 50 are exhausted, and as shown in FIG. 5H, the IPA systems existing in the organic solvent downstream portion 40 and the water downstream portion 50 are sucked in (attracted ) To suction pipe 49. The suction of the IPA is performed until the front end surface of the IPA is retracted to a predetermined standby position in the pipe (for example, it is set to the suction pipe 49 or the water downstream side portion 50). When the front end surface of the IPA is retracted to the standby position, the control device 3 closes the suction valve 51.
當從基板W的加速經過預定時間時,控制裝置3係控制自轉馬達22使自轉夾具5停止旋轉基板W,且控制阻隔板旋轉單元31使阻隔板26停止旋轉。 When a predetermined time has passed from the acceleration of the substrate W, the control device 3 controls the rotation motor 22 to stop the rotation jig 5 from rotating the substrate W, and controls the baffle plate rotation unit 31 to stop the baffle plate 26 from rotating.
之後,從處理腔室4內搬出基板W(圖4的步驟S9)。具體而言,控制裝置3使阻隔板26配置於退避位置且將第二防護罩72下降至下位置,並將第一防護罩71及第二防護罩72配置於比基板W的保持位置還下方。之後,控制裝置3係使基板搬運機器人CR的手部H進入至處理腔室4的內部。接著,控制裝置3係使基板搬運機器人CR的手部保持自轉夾 具5上的基板W,並使基板搬運機器人CR的手部H從處理腔室4內退避。藉此,從處理腔室4搬出已從表面去除阻劑的基板W。 After that, the substrate W is carried out from the processing chamber 4 (step S9 in FIG. 4). Specifically, the control device 3 arranges the barrier plate 26 in the retracted position and lowers the second protective cover 72 to a lower position, and places the first protective cover 71 and the second protective cover 72 below the holding position of the substrate W . After that, the control device 3 causes the hand H of the substrate transfer robot CR to enter the processing chamber 4. Next, the control device 3 maintains the rotation clamp of the hand of the substrate transfer robot CR. The substrate W on the fixture 5 retracts the hand H of the substrate transfer robot CR from the processing chamber 4. Thereby, the substrate W from which the resist has been removed from the surface is carried out from the processing chamber 4.
此外,如圖4中的二點鍊線所示,有在有機溶劑吸引步驟T5開始之前執行用以將有機溶劑配管34置換成新的IPA之有機溶劑預分配(pre-dispense)(圖4的步驟S10)之情形。於有機溶劑吸引步驟T5開始前,有機溶劑配管34的IPA的前端面係位於有機溶劑上流側部分41內。此時,有機溶劑配管34內(有機溶劑上游側部分41內)的IPA經時變化(溫度變化或成分變化)之情形。 In addition, as shown by the two-dot chain line in FIG. 4, there is an organic solvent pre-dispense for replacing the organic solvent pipe 34 with a new IPA before the organic solvent attraction step T5 starts (FIG. 4 In the case of step S10). Before the start of the organic solvent suction step T5, the front end surface of the IPA of the organic solvent pipe 34 is located in the organic solvent upstream side portion 41. At this time, the IPA in the organic solvent piping 34 (in the organic solvent upstream portion 41) changes with time (temperature change or component change).
在進行有機溶劑預分配之情形中,控制裝置3係將第二有機溶劑閥36及第一水閥46關閉,並將第一有機溶劑閥35及吸引閥51開啟,來自有機溶劑供給源的IPA係通過有機溶劑上游側部分41及水下游側部分50吸入(吸引)至吸引配管49。藉此,存在於有機溶劑上游側部分41之經過經時變化的IPA係被置換成新鮮的IPA。當從第一有機溶劑閥35開啟經過預先設定的期間時,控制裝置3係將第一有機溶劑閥35及吸引閥51關閉。 In the case of pre-dispensing the organic solvent, the control device 3 closes the second organic solvent valve 36 and the first water valve 46, opens the first organic solvent valve 35 and the suction valve 51, and IPA from the organic solvent supply source It is sucked (sucked) into the suction pipe 49 through the organic solvent upstream side portion 41 and the water downstream side portion 50. As a result, the IPA system that has undergone changes over time existing in the organic solvent upstream portion 41 is replaced with fresh IPA. When a predetermined period has elapsed since the first organic solvent valve 35 was opened, the control device 3 closes the first organic solvent valve 35 and the suction valve 51.
圖6係用以說明第一基板處理例的主要的步驟中之第一液體偵測感測器43及第二液體偵測感測器45所為之監視狀況之示意性的圖。 FIG. 6 is a schematic diagram illustrating the monitoring status of the first liquid detection sensor 43 and the second liquid detection sensor 45 in the main steps of the first substrate processing example.
如圖6所示,在有機溶劑步驟S7(有機溶劑噴出中)中,控制裝置3係不參照配置於比第二有機溶劑閥36還上游側的第一液體偵測感測器43的檢測輸出以及配置於比第二有機 溶劑閥36還下游側的第二液體偵測感測器45的檢測輸出的雙方。換言之,在有機溶劑步驟S7中,控制裝置3係無視第一檢測位置42及第二檢測位置44雙方中是否存在液體。 As shown in FIG. 6, in the organic solvent step S7 (during organic solvent ejection), the control device 3 does not refer to the detection output of the first liquid detection sensor 43 disposed upstream of the second organic solvent valve 36. And placed in a second organic The solvent valve 36 also has both the detection outputs of the second liquid detection sensor 45 on the downstream side. In other words, in the organic solvent step S7, the control device 3 ignores the presence or absence of liquid in both the first detection position 42 and the second detection position 44.
如圖6所示,在有機溶劑吸引步驟T5中,控制裝置3係參照配置於比第二有機溶劑閥36還上游側的第一液體偵測感測器43的檢測輸出以及配置於比第二有機溶劑閥36還下游側的第二液體偵測感測器45的檢測輸出的雙方。換言之,控制裝置3係監視第一檢測位置42及第二檢測位置44雙方中是否存在液體。在有機溶劑吸引步驟T5中,在依據第一液體偵測感測器43及第二液體偵測感測器45雙方的檢測輸出未檢測到第一檢測位置42及第二檢測位置44雙方中未存在液體(亦即IPA)之情形中,控制裝置3係偵測到IPA的吸引已結束。 As shown in FIG. 6, in the organic solvent suction step T5, the control device 3 refers to the detection output of the first liquid detection sensor 43 disposed on the upstream side of the second organic solvent valve 36 and the detection output of the first liquid detection sensor 43. The organic solvent valve 36 also has both the detection outputs of the second liquid detection sensor 45 on the downstream side. In other words, the control device 3 monitors whether liquid is present in both the first detection position 42 and the second detection position 44. In the organic solvent suction step T5, no detection is detected in both the first detection position 42 and the second detection position 44 based on the detection output of both the first liquid detection sensor 43 and the second liquid detection sensor 45. In the case of liquid (ie, IPA), the control device 3 detects that the suction of the IPA has ended.
此外,在第一基板處理例中,控制裝置3不僅是在有機溶劑吸引步驟T5中,在其他的吸引步驟(例如第一水吸引步驟T2或第二水吸引步驟T4)中亦監視第一檢測位置42及第二檢測位置44雙方中是否存在液體。 Further, in the first substrate processing example, the control device 3 monitors the first detection not only in the organic solvent suction step T5 but also in other suction steps (for example, the first water suction step T2 or the second water suction step T4). Whether the liquid is present in both the position 42 and the second detection position 44.
此外,在有機溶劑預分配步驟S10中,控制裝置3係僅參照配置於比第二有機溶劑閥36還上游側的第二液體偵測感測器45的檢測輸出,且不參照配置於比第二有機溶劑閥36還下游側的第一液體偵測感測器43的檢測輸出。換言之,控制裝置3雖然監視第二檢測位置44中是否存在液體,但無視第一檢測位置42中是否存在液體。不論第二有機溶劑閥36是否已被控制成閉狀態,在第二液體偵測感測器45檢測 到第二檢測位置44中存在液體(亦即IPA)之情形中,如圖6所示,控制裝置3係能偵測從第二有機溶劑閥36漏出有機溶溶劑(亦即IPA)之流出錯誤。 In addition, in the organic solvent pre-dispensing step S10, the control device 3 only refers to the detection output of the second liquid detection sensor 45 disposed on the upstream side from the second organic solvent valve 36, and does not refer to the detection output disposed on the second liquid solvent sensor 45. The two organic solvent valves 36 also have a detection output from the first liquid detection sensor 43 on the downstream side. In other words, although the control device 3 monitors the presence of liquid in the second detection position 44, it ignores the presence of liquid in the first detection position 42. Regardless of whether the second organic solvent valve 36 has been controlled to be closed, it is detected by the second liquid detection sensor 45 In the case where a liquid (ie, IPA) is present in the second detection position 44, as shown in FIG. 6, the control device 3 can detect an outflow error of the organic solvent (ie, IPA) leaking from the second organic solvent valve 36 .
此外,在第一基板處理例中,除了特別提到的各個步驟,控制裝置3係僅參照配置於比第二有機溶劑閥36還下游側的第二液體偵測感測器45的檢測輸出,並不參照配置於比第二有機溶劑閥36還上游側的第一液體偵測感測器43的檢測輸出。換言之,控制裝置3雖然監視第二檢測位置44中是否存在液體,但無視第一檢測位置42中是否存在液體。不論第二有機溶劑閥36是否已被控制成閉狀態,在第二液體偵測感測器45檢測到第二檢測位置44中存在液體(亦即IPA)之情形中,如圖6所示,控制裝置3係能偵測從第二有機溶劑閥36漏出有機溶劑(亦即IPA)之流出錯誤。 In addition, in the first substrate processing example, in addition to the steps specifically mentioned, the control device 3 refers only to the detection output of the second liquid detection sensor 45 disposed downstream of the second organic solvent valve 36. The detection output of the first liquid detection sensor 43 disposed on the upstream side from the second organic solvent valve 36 is not referred to. In other words, although the control device 3 monitors the presence of liquid in the second detection position 44, it ignores the presence of liquid in the first detection position 42. Regardless of whether the second organic solvent valve 36 has been controlled to be closed or not, in a case where the second liquid detection sensor 45 detects the presence of liquid (ie, IPA) in the second detection position 44, as shown in FIG. 6, The control device 3 can detect an outflow error of the organic solvent (ie, IPA) leaking from the second organic solvent valve 36.
表1係用以說明第一基板處理例中的硬聯鎖之圖。 Table 1 is a diagram for explaining the hard interlock in the first substrate processing example.
硬聯鎖處理係在依循保存於控制裝置3的記憶體之配方(recipe)進行一連串的基板處理之過程中,於各個步驟的開始時被執行。 The hard interlock processing is performed at the beginning of each step in a series of substrate processing in accordance with a recipe stored in the memory of the control device 3.
在硫酸含有液步驟S3開始時,分別調查是否存在(3)、(5)、(6)的情形:(3)防護罩下位置感測器94的檢測輸出是否 為導通(ON),亦即第一防護罩71是否配置於下位置;(5)第一液體偵測感測器43及第二液體偵測感測器45的檢測輸出是否為關斷(OFF),亦即IPA的前端面是否後退至吸引配管49或水下游側部分50;(6)閥關閉感測器37的檢測輸出是否為導通,亦即第一有機溶劑閥35是否處於閉狀態。在全部滿足這些(3)、(5)、(6)的條件之情形中,控制裝置3係容許硫酸含有液閥62的開啟動作。亦即,在(3)、(5)、(6)的條件中的一個條件未滿足之情形中,控制裝置3係禁止硫酸含有液閥62的開啟動作。藉由此種硬聯鎖,能確實地防止從第一噴嘴9開始噴出IPA時在處理腔室4內中IPA與SPM產生接觸。 At the beginning of the sulfuric acid-containing solution step S3, investigate whether (3), (5), and (6) are present respectively: (3) whether the detection output of the position sensor 94 under the protective cover is Is ON, that is, whether the first protective cover 71 is disposed at the lower position; (5) whether the detection outputs of the first liquid detection sensor 43 and the second liquid detection sensor 45 are OFF ), That is, whether the front end surface of the IPA recedes to the suction pipe 49 or the water downstream side portion 50; (6) whether the detection output of the valve closing sensor 37 is conductive, that is, whether the first organic solvent valve 35 is in a closed state. When all of the conditions (3), (5), and (6) are satisfied, the control device 3 allows the operation of the sulfuric acid-containing liquid valve 62 to be opened. That is, when one of the conditions (3), (5), and (6) is not satisfied, the control device 3 prohibits the opening operation of the sulfuric acid-containing liquid valve 62. With such a hard interlock, it is possible to reliably prevent the IPA from coming into contact with the SPM in the processing chamber 4 when the IPA is ejected from the first nozzle 9.
此外,在有機溶劑步驟S7開始時,分別調查是否存在(1)、(2)、(4)、(8)的情形:(1)阻隔板接近位置感測器33的檢測輸出是否為導通,亦即阻隔板26是否配置於接近位置;(2)噴嘴退避感測器64的檢測輸出是否為導通,亦即硫酸含有液噴嘴60是否位於退避位置;(4)防護罩上位置感測器93的檢測輸出是否為導通,亦即第一防護罩71是否配置於上位置;(8)第一閥開啟感測器21的檢測輸出是否為導通,亦即用以將排氣配管100予以開閉之排氣閥101是否處於開啟狀態。在全部滿足這些(1)、(2)、(4)、(8)的條件之情形中,控制裝置3係容許第一有機溶劑閥35的開啟動作。亦即,在(1)、(2)、(4)、(8)的條件中的一個條件未滿足之情形中,控制裝置3係禁止第一有機溶劑閥35的開啟動作。藉由此種硬聯鎖,能確實地防止從硫酸含有液噴嘴60開始噴出SPM時於處理腔室4內產生SPM與IPA的接觸。 In addition, at the beginning of the organic solvent step S7, it is investigated whether there are cases (1), (2), (4), and (8): (1) whether the detection output of the barrier proximity position sensor 33 is on, That is, whether the blocking plate 26 is disposed at the close position; (2) whether the detection output of the nozzle retreat sensor 64 is on, that is, whether the sulfuric acid-containing liquid nozzle 60 is located at the retreat position; (4) the position sensor 93 on the protective cover Whether the detection output is conductive, that is, whether the first protective cover 71 is arranged in the upper position; (8) Whether the detection output of the first valve opening sensor 21 is conductive, that is, used to open and close the exhaust pipe 100 Whether the exhaust valve 101 is in an open state. When all of the conditions (1), (2), (4), and (8) are satisfied, the control device 3 allows the opening operation of the first organic solvent valve 35. That is, in a case where one of the conditions (1), (2), (4), and (8) is not satisfied, the control device 3 prohibits the opening operation of the first organic solvent valve 35. With such hard interlocking, it is possible to reliably prevent the contact between the SPM and the IPA in the processing chamber 4 when the SPM is ejected from the sulfuric acid-containing liquid nozzle 60.
此外,調查在除電步驟S2開始時、硫酸含有液步驟S3開始時、第一清洗步驟S4開始時、洗淨藥液步驟S5開始時或者第二清洗步驟S6開始時,是否存在(7)之情形:(7)與噴出對象的處理液以外的處理液對應之第二閥關閉感測器95的檢測輸出是否全部導通,亦即與噴出對象的處理液以外的處理對應之排液分歧閥85是否已關閉。 In addition, it is investigated whether (7) is present at the beginning of the static elimination step S2, the sulfuric acid-containing liquid step S3, the first cleaning step S4, the cleaning chemical step S5, or the second cleaning step S6. : (7) Whether the detection output of the second valve closing sensor 95 corresponding to the processing liquid other than the processing liquid to be ejected is all on, that is, whether the liquid discharge branch valve 85 corresponding to the processing other than the processing liquid to be ejected is closed.
具體而言,在除電步驟S2、第一清洗步驟S4以及第二清洗步驟S6中,分別調查與硫酸含有液用分歧配管82用的排液分歧閥85對應的第二閥關閉感測器95以及與洗淨藥液用分歧配管83用的排液分歧閥85對應的第二閥關閉感測器95的檢測輸出。在硫酸含有液步驟S3中,分別調查與洗淨藥液用分歧配管83用的排液分歧閥85對應的第二閥關閉感測器95以及與水用分歧配管84用的排液分歧閥85對應的第二閥關閉感測器95的檢測輸出。在洗淨藥液步驟S5中,分別調查與硫酸含有液用分歧配管82用的排液分歧閥85對應的第二閥關閉感測器95以及與水用分歧配管84用的排液分歧閥85對應的第二閥關閉感測器95的檢測輸出。 Specifically, in the neutralization step S2, the first cleaning step S4, and the second cleaning step S6, the second valve closing sensor 95 and the second valve closing sensor 95 corresponding to the drain branch valve 85 for the branch pipe 82 for the sulfuric acid-containing liquid are investigated, respectively. The second valve corresponding to the liquid discharge branch valve 85 for the cleaning solution branch pipe 83 closes the detection output of the sensor 95. In the sulfuric acid-containing liquid step S3, the second valve closing sensor 95 corresponding to the liquid discharge branch valve 85 for the cleaning chemical liquid branch pipe 83 and the water discharge branch valve 85 for the water branch pipe 84 are investigated. The corresponding second valve closes the detection output of the sensor 95. In step S5 of cleaning the chemical solution, the second valve closing sensor 95 corresponding to the liquid discharge branch valve 85 for the branch pipe 82 for sulfuric acid-containing liquid and the liquid branch branch valve 85 for the branch pipe 84 for water are investigated. The corresponding second valve closes the detection output of the sensor 95.
在滿足該條件(7)之情形中,控制裝置3係在各個步驟S2至步驟S6開始時將與噴出對象的處理液對應之噴出開閉用的閥(亦即第一水閥46、硫酸含有液閥62以及洗淨藥液閥67中的任一個)開啟。亦即,在未滿足(7)的條件之情形中,控制裝置3係禁止第一水閥46、硫酸含有液閥62、洗淨藥液閥67的開啟動作。 In the case where this condition (7) is satisfied, the control device 3 is a valve for opening and closing the discharge corresponding to the processing liquid to be discharged at the beginning of each step S2 to step S6 (that is, the first water valve 46 and the sulfuric acid-containing liquid Either the valve 62 or the cleaning chemical liquid valve 67) is opened. That is, when the condition (7) is not satisfied, the control device 3 prohibits the opening operation of the first water valve 46, the sulfuric acid-containing liquid valve 62, and the cleaning chemical liquid valve 67.
如上所述,依據本實施形態,在硫酸含有液步驟S3之 前執行第一水置換步驟T1。當在硫酸含有液步驟S3開始前於有機溶劑配管34的內部殘存有已在前次的阻劑去除處理所使用的IPA時,會有在硫酸含有液步驟S3中已進入至有機溶劑配管34內之SPM的霧氣在有機溶劑配管34的內部與IPA接觸之虞。然而,在硫酸含有液步驟S3之前以碳酸水置換有機溶劑配管34的內部,藉此在硫酸含有液步驟S3開始時不會於有機溶劑配管34的內部殘留IPA。因此,即使在硫酸含有液步驟S3中SPM的霧氣進入至有機溶劑配管34內,亦不會在有機溶劑配管34的內部與IPA接觸。因此,能防止在硫酸含有液步驟S3中IPA與SPM接觸,藉此能抑制或防止有機溶劑配管34的內部成為微粒產生源。 As described above, according to this embodiment, in step S3 of the sulfuric acid-containing liquid Before performing the first water replacement step T1. Before the sulfuric acid-containing liquid step S3 starts, the IPA used in the previous resist removal treatment remains in the organic solvent pipe 34, and the sulfuric acid-containing liquid step S3 may enter the organic solvent pipe 34. The mist of SPM may come into contact with the IPA inside the organic solvent pipe 34. However, by replacing the inside of the organic solvent pipe 34 with carbonated water before the sulfuric acid-containing liquid step S3, IPA does not remain in the organic solvent pipe 34 at the beginning of the sulfuric acid-containing liquid step S3. Therefore, even if the mist of the SPM in the sulfuric acid-containing liquid step S3 enters the organic solvent piping 34, it does not come into contact with the IPA inside the organic solvent piping 34. Therefore, it is possible to prevent the IPA from contacting the SPM in the sulfuric acid-containing liquid step S3, thereby suppressing or preventing the inside of the organic solvent piping 34 from being a particle generation source.
此外,在硫酸含有液步驟S3之後且在有機溶劑步驟S7之前執行第二水置換步驟T3。當在硫酸含有液步驟S3中進入至有機溶劑配管34內且藉由凝結而液化的SPM的液滴在有機溶劑步驟S7的開始前存在於有機溶劑配管34的內部時,會有在有機溶劑步驟S7中已供給至有機溶劑配管34的IPA在有機溶劑配管34的內部與SPM接觸之虞。然而,在有機溶劑步驟S7之前以碳酸水置換有機溶劑配管34的內部,藉此在有機溶劑步驟S7開始時不會於有機溶劑配管34的內部殘留SPM的液滴。因此,即使在該有機溶劑步驟S7中IPA被供給至有機溶劑配管34,亦不會在有機溶劑配管34的內部與SPM接觸。因此,能有效地抑制或防止隨著IPA與SPM的接觸產生微粒,藉此能抑制或防止有機溶劑配管34的內部成為微粒產生源。 Further, the second water replacement step T3 is performed after the sulfuric acid-containing liquid step S3 and before the organic solvent step S7. In the sulfuric acid-containing liquid step S3, the droplets of SPM that have entered the organic solvent piping 34 and liquefied by condensation exist in the organic solvent piping 34 before the start of the organic solvent step S7. The IPA supplied to the organic solvent pipe 34 in S7 may come into contact with the SPM inside the organic solvent pipe 34. However, before the organic solvent step S7 is performed, the inside of the organic solvent pipe 34 is replaced with carbonated water, so that no droplets of SPM remain in the organic solvent pipe 34 at the beginning of the organic solvent step S7. Therefore, even if IPA is supplied to the organic solvent piping 34 in this organic solvent step S7, it does not come into contact with the SPM inside the organic solvent piping 34. Therefore, it is possible to effectively suppress or prevent the generation of particles due to the contact between the IPA and the SPM, thereby suppressing or preventing the inside of the organic solvent pipe 34 from being a source of particle generation.
圖7係用以說明處理單元2所為之第二基板處理例之示意性的圖。圖8係用以說明處理單元2所為之第三基板處理例之示意性的圖。第二基板處理例及第三基板處理例與圖4等所示的第一基板處理例的差異點在於:在第二清洗步驟S6結束之前對第一噴嘴9供給IPA。除此之外,第二基板處理例及第三基板處理例並無與第一基板處理例有差異。 FIG. 7 is a schematic diagram for explaining a second substrate processing example for the processing unit 2. FIG. 8 is a schematic diagram for explaining a third substrate processing example for the processing unit 2. The second substrate processing example and the third substrate processing example are different from the first substrate processing example shown in FIG. 4 and the like in that IPA is supplied to the first nozzle 9 before the end of the second cleaning step S6. In addition, the second substrate processing example and the third substrate processing example are not different from the first substrate processing example.
在圖7所示的第二基板處理例中,控制裝置3係在第二清洗步驟S6的執行中(與第二清洗步驟S6並行地)將第二有機溶劑閥36開啟並將第一有機溶劑閥35開啟。藉此,來自有機溶劑供給源的IPA係朝第一噴嘴9供給。然而,在從第一噴出口8噴出IPA之前的時序,控制裝置3係將第二水閥57關閉。藉此,不會從第一噴出口8噴出IPA。亦即,在第二清洗步驟S6的執行中,不從第一噴出口8噴出IPA,且有機溶劑下游側部分40的內部及第一噴嘴9的噴嘴配管的內部係被IPA填充。 In the second substrate processing example shown in FIG. 7, the control device 3 opens the second organic solvent valve 36 and executes the first organic solvent during the second cleaning step S6 (in parallel with the second cleaning step S6). The valve 35 is opened. Thereby, the IPA from the organic solvent supply source is supplied to the first nozzle 9. However, at the timing before the IPA is ejected from the first ejection port 8, the control device 3 closes the second water valve 57. This prevents the IPA from being ejected from the first ejection port 8. That is, in the execution of the second cleaning step S6, the IPA is not ejected from the first ejection port 8, and the inside of the organic solvent downstream portion 40 and the interior of the nozzle pipe of the first nozzle 9 are filled with IPA.
之後,當第二清洗步驟S6結束且變成開始有機溶劑步驟S7之時序時,控制裝置3係將第一有機溶劑閥35開啟,藉此從有機溶劑供給源再次開始朝第一噴嘴9供給IPA,並從第一噴出口8噴出IPA。 After that, when the second cleaning step S6 ends and becomes the timing of the start of the organic solvent step S7, the control device 3 opens the first organic solvent valve 35, thereby starting to supply IPA from the organic solvent supply source to the first nozzle 9 again, IPA is ejected from the first ejection port 8.
依據該第二基板處理例,能在第二清洗步驟S6結束後立即從第一噴出口8噴出IPA。亦即,能在第二清洗步驟S6結束後立即開始有機溶劑步驟S7。藉此,與第一基板處理例相比,能縮短阻劑去除處理整體的處理時間。 According to this second substrate processing example, IPA can be ejected from the first ejection port 8 immediately after the second cleaning step S6 is completed. That is, the organic solvent step S7 can be started immediately after the end of the second cleaning step S6. Thereby, compared with the first substrate processing example, the processing time of the entire resist removal processing can be shortened.
與圖7所示的第二基板處理例不同,在圖8所示的第三 基板處理例中,控制裝置3係在第二清洗步驟S6的執行中(與第二清洗步驟S6並行地)從第一噴出口8噴出IPA。 Unlike the second substrate processing example shown in FIG. 7, the third substrate processing example shown in FIG. 8 In the substrate processing example, the control device 3 ejects the IPA from the first ejection port 8 during the execution of the second cleaning step S6 (parallel to the second cleaning step S6).
具體而言,控制裝置3係在第二清洗步驟S6的執行中將第二有機溶劑閥36開啟並將第一有機溶劑閥35開啟。藉此,來自有機溶劑供給源的IPA係朝第一噴嘴9供給,並從第一噴出口8噴出。亦即,控制裝置3係在第二清洗步驟S6結束前開始有機溶劑步驟S7。 Specifically, the control device 3 opens the second organic solvent valve 36 and opens the first organic solvent valve 35 during the execution of the second cleaning step S6. Thereby, the IPA from the organic solvent supply source is supplied to the first nozzle 9 and is ejected from the first ejection port 8. That is, the control device 3 starts the organic solvent step S7 before the end of the second cleaning step S6.
在第三基板處理例中,與來自第二噴出口10的碳酸水的噴出流量相比,來自第一噴出口8的IPA的噴出流量為小流量(例如約1/10)。因此,幾乎不會對針對基板W的清洗處理造成不良影響。與第二基板處理例同樣地,在第三基板處理例中,由於從第二清洗步驟S6結束後直至有機溶劑步驟S7開始為止不存在休止區間(interval),因此與第一基板處理例相比,能縮短阻劑去除處理整體的處理時間。 In the third substrate processing example, the discharge flow rate of the IPA from the first discharge port 8 is smaller than the discharge flow rate of the carbonated water from the second discharge port 10 (for example, about 1/10). Therefore, there is almost no adverse effect on the cleaning process for the substrate W. As in the second substrate processing example, in the third substrate processing example, since there is no interval between the end of the second cleaning step S6 and the start of the organic solvent step S7, it is compared with the first substrate processing example. , Can shorten the overall processing time of the resist removal process.
以上雖已說明本發明的實施形態之一,但本發明亦能進一步以其他的形態來實施。 Although one of the embodiments of the present invention has been described above, the present invention can be implemented in other forms.
例如雖然已說明在第一基板處理例至第三基板處理例的第一水吸引步驟T2及第二水吸引步驟T4中進行碳酸水的吸引直至碳酸水的前端面後退至吸引配管49或水下游側部分50,但是吸引後的碳酸水的前端面亦可位於有機溶劑配管34的內部。 For example, although it has been described that the carbonated water is sucked in the first water suction step T2 and the second water suction step T4 of the first substrate processing example to the third substrate processing example until the front end surface of the carbonated water recedes to the suction pipe 49 or the water downstream The side portion 50, but the front end surface of the carbonated water after suction may be located inside the organic solvent pipe 34.
在第一基板處理例至第三基板處理例中,亦可以與除電步驟S2不同的時序進行第一水置換步驟T1。此外,亦可以與第一清洗步驟S4不同的時序進行第二水置換步驟T3。亦 可在除電步驟S2結束後進行第一水吸引步驟T2。亦可以與洗淨藥液步驟S5不同的時序進行第二水吸引步驟T4。 In the first substrate processing example to the third substrate processing example, the first water replacement step T1 may be performed at a timing different from that of the static elimination step S2. In addition, the second water replacement step T3 may be performed at a different timing from the first cleaning step S4. also The first water suction step T2 may be performed after the end of the static elimination step S2. The second water suction step T4 may be performed at a different timing from the cleaning chemical solution step S5.
此外,在第一基板處理例至第三基板處理例中,作為水置換步驟,執行在硫酸含有液步驟S3之前所執行的第一水置換步驟T1以及在硫酸含有液步驟S3之後且在有機溶劑步驟S7之前所執行的第二水置換步驟T3。然而,水置換步驟只要在有機溶劑步驟S7執行前及/或執行後以及/或者硫酸含有液步驟S3執行前及/或執行後中至少執行一次以上即可。 In addition, in the first substrate processing example to the third substrate processing example, as the water replacement step, the first water replacement step T1 performed before the sulfuric acid containing liquid step S3 and the organic solvent after the sulfuric acid containing liquid step S3 are performed. The second water replacement step T3 performed before step S7. However, the water replacement step may be performed at least once before and / or after the execution of the organic solvent step S7 and / or before and / or after the execution of the sulfuric acid-containing liquid step S3.
此外,在第一基板處理例至第三基板處理例中,亦可在洗淨藥液步驟S5的執行之前或者在洗淨藥液步驟S5的執行之後進行用以將過氧化氫水(H2O2)供給至基板W的上表面(表面)之過氧化氫水供給步驟。 In addition, in the first substrate processing example to the third substrate processing example, the hydrogen peroxide water (H 2) may be performed before the execution of the chemical cleaning step S5 or after the execution of the chemical cleaning step S5. O 2 ) a step of supplying hydrogen peroxide water to the upper surface (surface) of the substrate W.
此外,在前述實施形態中,雖然將SPM例示作為第一藥劑流體的一例所使用的硫酸含有液,但除此之外亦可使用硫酸或SOM(Sulfuric acid Ozone Mixture;硫酸臭氧混合物)作為硫酸含有液。 In the foregoing embodiment, although SPM was exemplified as the sulfuric acid-containing liquid used as an example of the first drug fluid, sulfuric acid or SOM (Sulfuric acid Ozone Mixture) may be used as sulfuric acid. liquid.
在前述實施形態中,已說明使用下述類型的處理罩16作為處理罩:在內部不進行氛圍與處理液的氣液分離,而是使用外部的氣液分離器(氣液分離器97)進行氛圍與處理液的氣液分離。然而,亦可使用可在內部進行氛圍與處理液的氣液分離之類型的處理罩作為處理罩。 In the foregoing embodiment, it has been described that the processing cover 16 of the following type is used as the processing cover: the gas-liquid separation of the atmosphere and the processing liquid is not performed inside, but the external gas-liquid separator (gas-liquid separator 97) The atmosphere is separated from the gas-liquid of the treatment liquid. However, it is also possible to use a processing cover of a type capable of performing gas-liquid separation of the atmosphere from the processing liquid inside.
該類型的處理罩係包含有:一個或複數個罩,係配置成圍繞自轉夾具5;以及排液配管,係連接至各個罩。此外, 在具有該類型的處理罩之處理腔室4中,於隔壁18的側壁下部或隔壁18的底部開口有排氣口,且該排氣口的內部係被連接至該排氣口的排氣導管吸引,藉此將處理腔室4的下部空間的氛圍排氣。 This type of processing cover includes: one or a plurality of covers configured to surround the rotation jig 5; and a drain pipe connected to each cover. In addition, In the processing chamber 4 having a processing cover of this type, an exhaust port is opened at the lower part of the side wall of the partition wall 18 or the bottom of the partition wall 18, and the inside of the exhaust port is connected to an exhaust duct of the exhaust port By suction, the atmosphere in the lower space of the processing chamber 4 is exhausted.
此外,在前述實施形態中,設置用以將複數種類的處理液(硫酸含有液、洗淨藥液以及水)予以排液之共通的排液槽(排液槽80),並因應該排液(處理液)的種類在複數個硫酸含有液用分歧配管82、洗淨藥液用分歧配管83以及水用分歧配管84間切換來自排液槽80的排液(處理液)的流通目的地。 In addition, in the foregoing embodiment, a common drainage tank (drainage tank 80) is provided for draining a plurality of types of processing liquids (sulfuric acid-containing liquid, cleaning solution, and water), and the corresponding drainage liquids are drained accordingly. The type of (treatment liquid) is switched between a plurality of branched pipes 82 for sulfuric acid-containing liquid, a branched pipe 83 for cleaning chemicals, and a branched pipe 84 for water.
然而,亦可在處理罩16中以一對一對應的方式於各種類的處理液設置有排液槽。亦即,亦可個別地設置有硫酸含有液的排液槽、洗淨藥液用的排液槽以及水用的排液槽。在此情形中,無須在複數個排液分歧配管之間切換排液(處理液)的流通目的地。 However, a drain tank may be provided in the processing cover 16 in a one-to-one correspondence with various types of processing liquids. That is, a drainage tank for a sulfuric acid-containing liquid, a drainage tank for washing a chemical solution, and a drainage tank for water may be separately provided. In this case, it is not necessary to switch the circulation destination of the discharged liquid (treatment liquid) between the plurality of discharged branch pipes.
此外,在前述實施形態中,雖已例示IPA作為第二藥劑流體的一例所使用的有機溶劑的一例,但除此之外亦可例示甲醇、乙醇、HFE(hydrofluoroether;氫氟醚)、丙酮等作為有機溶劑。此外,有機溶劑並未限定於僅由單體成分所構成的情形,有機溶劑亦可為與其他成分混合的液體。例如,亦可為IPA與丙酮的混合液,或亦可為IPA與甲醇的混合液。 In the foregoing embodiment, although an example of an organic solvent used as an example of IPA as the second pharmaceutical fluid has been exemplified, methanol, ethanol, HFE (hydrofluoroether), acetone, etc. may also be exemplified. As an organic solvent. In addition, the organic solvent is not limited to a case where it is composed of only a monomer component, and the organic solvent may be a liquid mixed with other components. For example, it may be a mixed solution of IPA and acetone, or a mixed solution of IPA and methanol.
在前述實施形態中,雖然例示SPM等硫酸含有液及IPA等有機溶劑的組合作為接觸而伴隨著危險之藥液的組合,但除此之外亦可例示王水及硫酸的組合等作為接觸而伴隨 著危險之組合。 In the foregoing embodiment, although a combination of a sulfuric acid-containing liquid such as SPM and an organic solvent such as IPA was exemplified as a combination of dangerous medicinal liquids, a combination of aqua regia and sulfuric acid may be exemplified as contact. Accompany A dangerous combination.
此外,本發明亦可廣泛地應用於前述之酸與鹼的組合般之藉由接觸生成生成物(例如鹽)之組合,亦即亦可廣泛地應用於不適合接觸的藥劑流體的組合。 In addition, the present invention can also be widely applied to the combination of products (for example, salts) formed by contact, such as the aforementioned combination of acid and base, that is, it can also be widely applied to the combination of pharmaceutical fluids that are not suitable for contact.
在前述說明中,雖然已說明第一藥劑流體(含有藥劑成分的流體)為液體(亦即含有藥劑成分的液體),但亦可採用氣體(亦即含有藥劑成分的氣體)作為第一藥劑流體。 In the foregoing description, although the first pharmaceutical fluid (fluid containing a pharmaceutical component) has been described as a liquid (ie, a liquid containing a pharmaceutical component), a gas (that is, a gas containing a pharmaceutical component) may also be used as the first pharmaceutical fluid .
此外,雖然已說明第二藥劑流體為液體,亦可採用氣體作為第二藥劑流體。此外,雖然已例示碳酸水作為用以置換藥劑流體配管(有機溶劑配管34)的內部之水,但該水並未限定於碳酸水,亦可為去離子水(DIW;deionized water)、電解離子水、氫水、臭氧水以及稀釋濃度(例如10ppm至100ppmm左右)的鹽酸水的任一者。 In addition, although it has been described that the second medical fluid is a liquid, a gas may be used as the second medical fluid. In addition, although carbonated water has been exemplified as a water for replacing the inside of a pharmaceutical fluid pipe (organic solvent pipe 34), the water is not limited to carbonated water, and may also be deionized water (DIW; deionized water) or electrolytic ions. Any of water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppmm).
雖然已詳細地說明本發明的實施形態,但這些實施形態僅為用以明瞭本發明的技術性內容之具體例,本發明不應被解釋成侷限於這些具體例,本發明的範圍僅被申請專利範圍所界定。 Although the embodiments of the present invention have been described in detail, these embodiments are only specific examples for clarifying the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples, and the scope of the present invention is only applied for Defined by patent scope.
本申請案係與2016年5月25日於日本特許廳所提出的特願2016-104600號對應,該申請案的全部揭示係被引用並寫入於本申請案中。 This application corresponds to Japanese Patent Application No. 2016-104600 filed by the Japan Patent Office on May 25, 2016, and the entire disclosure of this application is cited and incorporated in this application.
4‧‧‧處理腔室 4‧‧‧ treatment chamber
6‧‧‧基板對向面 6‧‧‧ Opposite side of substrate
7‧‧‧對向構件 7‧‧‧ Opposing member
8‧‧‧第一噴出口 8‧‧‧ the first spray outlet
9‧‧‧第一噴嘴 9‧‧‧ the first nozzle
10‧‧‧第二噴出口 10‧‧‧Second spray outlet
11‧‧‧第二噴嘴 11‧‧‧Second Nozzle
16‧‧‧處理罩 16‧‧‧Handling cover
26‧‧‧阻隔板 26‧‧‧Barrier
35‧‧‧第一有機溶劑閥 35‧‧‧The first organic solvent valve
36‧‧‧第二有機溶劑閥 36‧‧‧Second Organic Solvent Valve
39‧‧‧第一水配管 39‧‧‧First water piping
40‧‧‧有機溶劑下游側部分 40‧‧‧ Downstream side of organic solvent
46‧‧‧第一水閥 46‧‧‧The first water valve
49‧‧‧吸引配管 49‧‧‧ suction pipe
50‧‧‧水下游側部分 50‧‧‧ downstream side of water
51‧‧‧吸引閥 51‧‧‧ Suction valve
56‧‧‧第二水配管 56‧‧‧Second water piping
57‧‧‧第二水閥 57‧‧‧Second Water Valve
71‧‧‧第一防護罩 71‧‧‧First protective cover
72‧‧‧第二防護罩 72‧‧‧Second protective cover
A1‧‧‧旋轉軸線 A1‧‧‧axis of rotation
W‧‧‧基板 W‧‧‧ substrate
Claims (21)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-104600 | 2016-05-25 | ||
| JP2016104600A JP2017212335A (en) | 2016-05-25 | 2016-05-25 | Wafer processing device and wafer processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201806019A true TW201806019A (en) | 2018-02-16 |
| TWI643259B TWI643259B (en) | 2018-12-01 |
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| TW106117213A TWI643259B (en) | 2016-05-25 | 2017-05-24 | Substrate processing apparatus and substrate processing method |
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| Country | Link |
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| JP (1) | JP2017212335A (en) |
| KR (2) | KR102223972B1 (en) |
| CN (1) | CN109155247B (en) |
| TW (1) | TWI643259B (en) |
| WO (1) | WO2017204088A1 (en) |
Cited By (1)
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|---|---|---|---|---|
| TWI836216B (en) * | 2020-05-29 | 2024-03-21 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
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| JP7446073B2 (en) * | 2019-09-27 | 2024-03-08 | 株式会社Screenホールディングス | Substrate processing equipment |
| JP7487006B2 (en) * | 2020-05-19 | 2024-05-20 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus and substrate liquid processing method |
| CN114068304A (en) * | 2021-11-04 | 2022-02-18 | 上海至临半导体技术有限公司 | Wafer cleaning method and wafer cleaning system |
Family Cites Families (12)
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| JPS4917469B1 (en) | 1970-05-28 | 1974-05-01 | ||
| JPS4917470B1 (en) | 1970-12-25 | 1974-05-01 | ||
| JP4763563B2 (en) * | 2006-09-20 | 2011-08-31 | 大日本スクリーン製造株式会社 | Substrate processing method |
| JP5031671B2 (en) * | 2008-06-03 | 2012-09-19 | 東京エレクトロン株式会社 | Liquid processing apparatus, liquid processing method, and storage medium |
| JP5613636B2 (en) * | 2011-07-27 | 2014-10-29 | 東京エレクトロン株式会社 | Liquid processing apparatus, liquid processing apparatus control method, computer program, and computer-readable storage medium |
| JP6032878B2 (en) * | 2011-09-29 | 2016-11-30 | 株式会社Screenホールディングス | Substrate processing apparatus and substrate processing method |
| JP5963075B2 (en) * | 2012-03-29 | 2016-08-03 | 株式会社Screenホールディングス | Substrate processing method and substrate processing apparatus |
| TWI630652B (en) * | 2014-03-17 | 2018-07-21 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method using substrate processing apparatus |
| US9460944B2 (en) * | 2014-07-02 | 2016-10-04 | SCREEN Holdings Co., Ltd. | Substrate treating apparatus and method of treating substrate |
| JP6432824B2 (en) * | 2014-08-15 | 2018-12-05 | 株式会社Screenホールディングス | Substrate processing equipment |
| KR102342131B1 (en) * | 2014-08-15 | 2021-12-21 | 가부시키가이샤 스크린 홀딩스 | Substrate treatment apparatus, and substrate treatment method |
| JP6392046B2 (en) * | 2014-09-17 | 2018-09-19 | 株式会社Screenホールディングス | Substrate processing equipment |
-
2016
- 2016-05-25 JP JP2016104600A patent/JP2017212335A/en not_active Ceased
-
2017
- 2017-05-18 WO PCT/JP2017/018735 patent/WO2017204088A1/en not_active Ceased
- 2017-05-18 KR KR1020207032614A patent/KR102223972B1/en active Active
- 2017-05-18 CN CN201780026979.1A patent/CN109155247B/en active Active
- 2017-05-18 KR KR1020187031267A patent/KR20180128957A/en not_active Abandoned
- 2017-05-24 TW TW106117213A patent/TWI643259B/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI836216B (en) * | 2020-05-29 | 2024-03-21 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI643259B (en) | 2018-12-01 |
| WO2017204088A1 (en) | 2017-11-30 |
| KR20200130515A (en) | 2020-11-18 |
| KR102223972B1 (en) | 2021-03-05 |
| JP2017212335A (en) | 2017-11-30 |
| KR20180128957A (en) | 2018-12-04 |
| CN109155247A (en) | 2019-01-04 |
| CN109155247B (en) | 2023-07-21 |
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