TW201732092A - Adjustment plate and plating device and plating method therewith - Google Patents
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Abstract
Description
本發明是關於一種調節板及具備該調節板的鍍覆裝置及鍍覆方法。 The present invention relates to an adjustment plate and a plating apparatus and a plating method including the same.
以往,進行在半導體晶圓等基板表面所設置的細微配線用溝、孔或抗蝕開口部形成配線,在基板表面形成電連接封裝電極等的凸塊(突起狀電極)。做為形成此配線及凸塊的方法,已知例如電解鍍覆法、蒸鍍法、印刷法、球凸塊法等。隨著半導體晶片的I/O數增加、細間距化,多使用可微細化且性能相對安定的電解鍍覆法。 Conventionally, a wiring for forming a fine wiring groove, a hole, or a resist opening provided on a surface of a substrate such as a semiconductor wafer is formed, and a bump (protrusion electrode) electrically connecting a package electrode or the like is formed on the surface of the substrate. As a method of forming the wiring and the bump, for example, an electrolytic plating method, a vapor deposition method, a printing method, a ball bump method, or the like is known. As the number of I/Os of semiconductor wafers increases and the pitch is finer, an electrolytic plating method which is finer and relatively stable in performance is often used.
在以電解鍍覆法形成配線或凸塊的情況,在基板上的配線用溝、孔或抗蝕開口部所設的障壁金屬表面形成有電阻低的晶種層(供電層)。在此晶種層的表面,鍍覆膜成長。近年來,隨著配線及凸塊的細微化,使用膜厚更薄的晶種層。當晶種層的膜厚變薄,則晶種層的電阻(薄膜電阻)增加。 In the case where wiring or bumps are formed by electrolytic plating, a seed layer (power supply layer) having a low electric resistance is formed on the surface of the barrier metal provided in the wiring trench, the hole or the resist opening portion on the substrate. On the surface of the seed layer, the plating film grows. In recent years, as wiring and bumps have been miniaturized, a seed layer having a thinner film thickness has been used. When the film thickness of the seed layer is thinned, the electric resistance (thin film resistance) of the seed layer is increased.
一般來說,被鍍覆的基板在其周緣部具有電接點。因此,在基板的中央部,有電流流動,該電流對應鍍覆液的電阻值與從基板中央部到電接點的晶種層的電阻值的合成電阻。另一方面,在基板的周緣部(電接點附近),幾乎有對應鍍覆液的電阻值的電流流動。也就是說,在基板的中央部,只有從基板中央部到電接點的晶種層的電阻值的程度,電流難以流動。電流集中於基板周緣部的現象稱為終端效應。 Generally, the plated substrate has electrical contacts at its peripheral portion. Therefore, a current flows in the central portion of the substrate, and this current corresponds to the combined resistance of the resistance value of the plating solution and the resistance value of the seed layer from the central portion of the substrate to the electrical contact. On the other hand, in the peripheral portion of the substrate (near the electrical contact), almost a current corresponding to the resistance value of the plating liquid flows. That is, in the central portion of the substrate, the current is hard to flow only from the central portion of the substrate to the resistance value of the seed layer of the electrical contact. The phenomenon in which current concentrates on the peripheral portion of the substrate is called a terminal effect.
具有膜厚相對薄的晶種層的基板,從基板中央部到電接點的晶種層的電阻值相對大。因此,在對具有膜厚相對薄的晶種層的基板進行鍍覆的情況下,終端效應變得顯著。結果,在基板中央部的鍍覆速度降低,在基板中央部的鍍覆膜的膜厚比在基板周緣部的鍍覆膜更薄,膜厚的面內均勻性降低。 In a substrate having a seed layer having a relatively thin film thickness, the resistance value of the seed layer from the central portion of the substrate to the electrical contact is relatively large. Therefore, in the case of plating a substrate having a seed layer having a relatively thin film thickness, the terminal effect becomes remarkable. As a result, the plating speed at the central portion of the substrate is lowered, and the thickness of the plating film at the central portion of the substrate is thinner than the plating film at the peripheral portion of the substrate, and the in-plane uniformity of the film thickness is lowered.
為了抑制因終端效應導致的膜厚的面內均勻性降低,需要調整施加於基板的電場。例如,已知一種鍍覆裝置,將用來調整在陽極與基板之間的電位分佈的調整板,設置於陽極與基板之間(參照專利文獻1)。 In order to suppress the in-plane uniformity of the film thickness due to the terminal effect, it is necessary to adjust the electric field applied to the substrate. For example, a plating apparatus is known in which an adjustment plate for adjusting a potential distribution between an anode and a substrate is provided between an anode and a substrate (see Patent Document 1).
【先前技術文獻】 [Previous Technical Literature]
【專利文獻】 [Patent Literature]
【專利文獻1】特開2005-029863號公報 [Patent Document 1] JP-A-2005-029863
然而,終端效應的影響,因基板晶種層的膜厚大小而不同。具體來說,如上述,在晶種層的膜厚相對薄的情況下,薄膜電阻相對大,所以終端效應的影響表現顯著。另一方面,在晶種層的膜厚相對厚的情況下,薄膜電阻相對小,所以終端效應的影響變得相對小。 However, the effect of the terminal effect differs depending on the film thickness of the substrate seed layer. Specifically, as described above, when the film thickness of the seed layer is relatively thin, the sheet resistance is relatively large, so that the effect of the terminal effect is remarkable. On the other hand, in the case where the film thickness of the seed layer is relatively thick, the sheet resistance is relatively small, so that the influence of the terminal effect becomes relatively small.
又,終端效應的影響不只是因晶種層的膜厚大小而不同,也會因其他因素而不同。例如,在基板的抗蝕開口率(在保護層外緣相接的區域的面積中,未覆蓋保護層的部分(抗蝕開口部分)的面積的比率)相對較高的情況下,基板上所形成的鍍覆膜的面積相對大。因此,隨著在基板上形成鍍覆膜,藉由已形成的鍍覆膜,電流也變得容易在基板中央部流動。換句話說,隨著在基板上形成鍍覆膜,從基板的中央部到電接點的電阻值變小,所以終端效應的影響會逐漸變小。另一方面,在基板的抗蝕開口率相對較低的情況下,基板上即使形成鍍覆膜,相較於基板的抗蝕開口率相對高的情況,從基板中央部到電接點的電阻值的變化變小,終端效應的影響持續變大。 Moreover, the effect of the terminal effect is not only different depending on the film thickness of the seed layer, but also varies depending on other factors. For example, in the case where the resist opening ratio of the substrate (the ratio of the area of the portion (the resist opening portion) not covering the protective layer in the area of the region where the outer edge of the protective layer is in contact) is relatively high, on the substrate The area of the formed plating film is relatively large. Therefore, as a plating film is formed on the substrate, current is also likely to flow in the central portion of the substrate by the formed plating film. In other words, as the plating film is formed on the substrate, the resistance value from the central portion of the substrate to the electrical contact becomes small, so that the influence of the terminal effect is gradually reduced. On the other hand, when the resist opening ratio of the substrate is relatively low, even if a plating film is formed on the substrate, the resistance from the central portion of the substrate to the electrical contact is higher than when the resist opening ratio of the substrate is relatively high. The change in value becomes smaller, and the effect of the terminal effect continues to increase.
再者,在處理基板的鍍覆液的電阻值相對大的情況,相較於處理基板的鍍覆液的電阻值相對小的情況,終端效應的影響較小。具體來說,在鍍覆液的電阻值為R1,從基板中央部到電接點的晶種層的電阻值為R2的情況下,在基板中央部有對應合成電阻值(R1+R2)的電流流動。另一方面,在基板周緣部(電接點附近),幾乎有對應鍍覆液的電阻值R1的電流流動。因此,若電阻值R1變大,對於在基板中央部流動的電流的電阻值R2的影響變小,終端效應的影響會變小。 Further, when the resistance value of the plating liquid for processing the substrate is relatively large, the influence of the terminal effect is small as compared with the case where the resistance value of the plating liquid of the processing substrate is relatively small. Specifically, when the resistance value of the plating solution is R1 and the resistance value of the seed layer from the central portion of the substrate to the electrical contact is R2, there is a corresponding composite resistance value (R1+R2) at the center of the substrate. Current flows. On the other hand, in the peripheral portion of the substrate (near the electric contact), almost a current corresponding to the resistance value R1 of the plating liquid flows. Therefore, when the resistance value R1 is increased, the influence of the resistance value R2 of the current flowing in the central portion of the substrate is small, and the influence of the terminal effect is small.
如以上,終端效應的影響是依基板特徵及處理基板的條件等而不同。因此,在單一的鍍覆裝置,終端效應的影響在不同的複數個基板依序進行鍍覆的的情況下,為了抑制因終端效應導致膜厚的面內均勻性降低,需要配合個別基板的特徵及處理基板的條件等來調節施加基板的電場。但是,為了以如專利文獻1所記載的調整板配合基板特徵及處理基板條件等來調節電場,必須準備複數個配合基板特徵及處理基板條件等的調整板。 As described above, the influence of the terminal effect differs depending on the characteristics of the substrate, the conditions for processing the substrate, and the like. Therefore, in the case of a single plating apparatus, in the case where the influence of the terminal effect is sequentially plated on a plurality of different substrates, in order to suppress the in-plane uniformity of the film thickness due to the terminal effect, it is necessary to match the characteristics of the individual substrates. The conditions of the substrate are processed and the like, and the electric field applied to the substrate is adjusted. However, in order to adjust the electric field by the adjustment plate-matching substrate characteristics and the processing substrate conditions as described in Patent Document 1, it is necessary to prepare a plurality of adjustment plates that match the substrate characteristics and the processing substrate conditions.
又,即使準備複數個調整板,每當處理特徵及處理條件不同的基板時,從鍍覆槽取出調整板,設置其他調整板等,耗費時間。 Further, even when a plurality of adjustment plates are prepared, when the substrate having different characteristics and processing conditions is processed, the adjustment plate is taken out from the plating tank, and another adjustment plate or the like is provided, which takes time.
本發明有鑑於上述課題,其目的之一是提供一種調節板及具備該調節板的鍍覆裝置及鍍覆方法,當對特徵及處理條件不同的複數個基板進行鍍覆時,可抑制因終端效應的影響導致的面內均勻性降低。 The present invention has been made in view of the above problems, and an object thereof is to provide an adjustment plate and a plating apparatus and a plating method including the same, which can suppress a terminal when plating a plurality of substrates having different characteristics and processing conditions The effect of the effect causes the in-plane uniformity to decrease.
根據第一形態,提供一種調節板,用來調整在陽極與被鍍覆的基板之間的電流,具有:板本體部,具有緣部,該緣部形成電流通過的第一開口;複數個第一板,用來縮小前述第一開口的徑;以及第一移動機構,使前述複數個第一板在前述第一開口的徑方向同步移動。 According to a first aspect, there is provided an adjustment plate for adjusting a current between an anode and a substrate to be plated, comprising: a plate body portion having a rim portion, the edge portion forming a first opening through which current flows; a plate for reducing a diameter of the first opening; and a first moving mechanism for synchronously moving the plurality of first plates in a radial direction of the first opening.
根據第一形態,藉由第一板縮小調節板的開口的徑,可以調節開口的徑。藉此,在第一基板與第二基板的特徵或處理條件彼此不同的情況下,可以抑制因終端效應的影響導致面內均勻性降低。具體來說,在終端效應的影響表現顯著的條件下,對基板進行鍍覆時,藉由將調節板的開口的徑變小,可抑制基板周緣部的成膜速度,可以使基板的面內均勻性提昇。又,因為第一板被構成為同步移動,所以可維持與其他的第一板的角度關係,複數個第一板在徑方向移動。因此,相較於如相機的光圈機構,複數個光圈葉片以特定軸為中心旋轉將開口的徑變小的情況,可保持以第一板所形成的開口的完整圓形。 According to the first aspect, the diameter of the opening can be adjusted by reducing the diameter of the opening of the adjustment plate by the first plate. Thereby, in the case where the characteristics or processing conditions of the first substrate and the second substrate are different from each other, it is possible to suppress a decrease in in-plane uniformity due to the influence of the terminal effect. Specifically, when the substrate is plated under the condition that the influence of the terminal effect is remarkable, the film formation speed of the peripheral edge portion of the substrate can be suppressed by reducing the diameter of the opening of the adjustment plate, and the in-plane of the substrate can be made. Uniformity is improved. Further, since the first plate is configured to move in synchronization, the angular relationship with the other first plates can be maintained, and the plurality of first plates move in the radial direction. Therefore, compared with a diaphragm mechanism such as a camera, when a plurality of aperture blades are rotated around a specific axis to reduce the diameter of the opening, the complete circular shape of the opening formed by the first plate can be maintained.
根據第二形態,在第一形態中,前述第一移動機構包含:環部件,沿著前述緣部配置;前述環部件以及前述複數個第一板的任一者,具有:滑動長孔,相對於前述第一開口的徑方向傾斜;前述環部件以及前 述複數個第一板的另一者,具有:滑動銷,在前述滑動長孔滑動。 According to a second aspect, in the first aspect, the first moving mechanism includes: a ring member disposed along the edge portion; and the ring member and the plurality of first plates each have a sliding long hole and a relative Inclining in the radial direction of the aforementioned first opening; the aforementioned ring member and the front The other of the plurality of first plates has a slide pin that slides in the sliding long hole.
根據第二形態,在環部件以及複數個第一板的任一者所設有的滑動銷是在環部件以及複數個第一板的另一者所設有的滑動長孔滑動。因此,藉由使環部件在周方向旋轉,滑動銷在滑動長孔滑動,可使第一板在開口的徑方向移動。 According to the second aspect, the slide pin provided in any one of the ring member and the plurality of first plates slides on the sliding long hole provided in the ring member and the other of the plurality of first plates. Therefore, by rotating the ring member in the circumferential direction, the slide pin slides in the sliding long hole, and the first plate can be moved in the radial direction of the opening.
根據第三形態,在第二形態中,前述第一移動機構,包含板壓部件,固定於前述複數個第一板的前述環部件的相反側;前述板壓部件以及前述複數個第一板的任一者,具有:導引長孔,形成在平行於前述第一板的同步移動方向;前述板壓部件以及前述複數個第一板的另一者,具有:導引銷,在前述導引長孔滑動。 According to a third aspect, in the second aspect, the first moving mechanism includes a plate pressing member that is fixed to an opposite side of the ring member of the plurality of first plates, and the plate pressing member and the plurality of first plates Either having: a guiding elongated hole formed in a synchronous moving direction parallel to the first plate; the other of the pressing member and the plurality of first plates having: a guiding pin, in the guiding Long holes slide.
根據第三形態,在板壓部件及複數個第一板的任一者所設有的導引銷是在板壓部件及複數個第一板的另一者所設有的導引長孔滑動。因此,藉由移動機構移動複數個第一板時,可防止複數個第一板旋轉運動,並使第一板在特定方向同步移動。 According to the third aspect, the guide pin provided in any one of the plate pressing member and the plurality of first plates is a guide long hole sliding provided on the other of the plate pressing member and the plurality of first plates . Therefore, when the plurality of first plates are moved by the moving mechanism, the plurality of first plates can be prevented from rotating and the first plate can be synchronously moved in a specific direction.
根據第四形態,在第二及第三形態中,前述第一移動機構包含:旋轉部件,用來使前述環部件在周方向旋轉;前述旋轉部件具有:環部,固定於前述環部件;以及桿部,使前述環部在周方向旋轉。 According to a fourth aspect, in the second aspect and the third aspect, the first moving mechanism includes: a rotating member that rotates the ring member in a circumferential direction; and the rotating member includes a ring portion that is fixed to the ring member; The rod portion rotates the ring portion in the circumferential direction.
根據第四形態,藉由致動器或手動操作桿部,可使環部在周方向旋轉。因為環部被固定於環部件,所以隨著環部的旋轉,環部件旋轉。藉此,設於環部件的滑動長孔或滑動銷在設於複數個第一板的滑動銷或滑動長孔滑動,可使複數個第一板同步移動。 According to the fourth aspect, the ring portion can be rotated in the circumferential direction by the actuator or the manual operation of the rod portion. Since the ring portion is fixed to the ring member, the ring member rotates as the ring portion rotates. Thereby, the sliding long hole or the sliding pin provided in the ring member slides on the sliding pin or the sliding long hole provided in the plurality of first plates, so that the plurality of first plates can be synchronously moved.
根據第五形態,在第四形態中,前述板本體及前述環部的任一者,具有:支持長孔,沿著前述環部的旋轉方向形成;前述板本體及前述環部的另一者,具有:支持銷,可滑動地嚙合於前述支持長孔。 According to a fifth aspect, in the fourth aspect, the plate body and the ring portion have a support long hole formed along a rotation direction of the ring portion, and the other of the plate body and the ring portion And having a support pin slidably engaged with the aforementioned support long hole.
根據第五形態,板本體部及環部的任一者所設有的支持銷可滑動地嚙合於板本體部及環部的另一者所設有的支持長孔。藉由支持銷嚙合於支持長孔,環部被支持於板本體部。因為支持長孔是沿著環部的旋轉方向形成,所以藉由支持銷在支持長孔滑動,可使環部旋轉。 According to the fifth aspect, the support pin provided in any one of the plate main body portion and the ring portion is slidably engaged with the support long hole provided in the other of the plate main body portion and the ring portion. The ring portion is supported by the plate body portion by the support pin engaging the support long hole. Since the support long hole is formed along the rotation direction of the ring portion, the ring portion can be rotated by the support pin sliding in the support long hole.
根據第六形態,在第一到五形態的任一形態中,前述複數個 第一板分別是其內周緣形成為圓弧狀,與其他的前述第一板彼此重疊形成大致圓形的內周緣。 According to the sixth aspect, in any of the first to fifth forms, the plurality of the foregoing Each of the first plates has an inner peripheral edge formed in an arc shape, and the other first plates overlap each other to form a substantially circular inner peripheral edge.
根據第六形態,複數個第一板在開口的徑方向同步移動並使開口的徑縮小時,複數個第一板的內周緣可保持大致圓形。 According to the sixth aspect, when the plurality of first plates are synchronously moved in the radial direction of the opening and the diameter of the opening is reduced, the inner peripheral edges of the plurality of first plates can be kept substantially circular.
根據第七形態,從第一到六形態的任一形態中,調節板具有:複數個第二板,配置在垂直於前述第一開口的徑方向的方向偏離前述複數個第一板的位置,用來縮小前述第一開口的徑;以及第二移動機構,使前述複數個第二板在前述第一開口的徑方向同步移動。 According to a seventh aspect, in any one of the first to sixth aspects, the adjustment plate has: a plurality of second plates disposed at positions offset from the plurality of first plates in a direction perpendicular to a radial direction of the first opening, a diameter for reducing the first opening; and a second moving mechanism for synchronously moving the plurality of second plates in a radial direction of the first opening.
根據第七形態,調節板具有:以複數個第一板所形成的具有第一徑的開口與以複數個第二板所形成的具有第二徑的開口。藉由分別適當調整一徑與第二徑的大小,可以更適當地調整通過調節板開口的電流。 According to a seventh aspect, the adjustment plate has an opening having a first diameter formed by a plurality of first plates and an opening having a second diameter formed by the plurality of second plates. The current passing through the opening of the regulating plate can be more appropriately adjusted by appropriately adjusting the sizes of the one diameter and the second diameter, respectively.
根據第八形態,在第七形態中,為了以前述複數個第一板所形成的開口的中心與以前述複數個第二板所形成的開口的中心所連接的直線垂直於這些開口的徑方,配置有前述第一板及前述第二板。 According to an eighth aspect, in the seventh aspect, the straight line connecting the center of the opening formed by the plurality of first plates and the center of the opening formed by the plurality of second plates is perpendicular to the diameter of the openings The first plate and the second plate are disposed.
根據第八形態,為了以第一板所形成的開口中心與以第二板所形成的開口中心彼此一致,配置有第一板及第二板。因此,在將調節板定位於鍍覆槽時,不需要分別定位以複數個第一板所形成的開口中心與以複數個第二板所形成的開口中心。因此,即使在調節板的開口中心的位置需要高精確度的情況,也可以容易地定位調節板。 According to the eighth aspect, the first plate and the second plate are disposed so that the center of the opening formed by the first plate and the center of the opening formed by the second plate coincide with each other. Therefore, when the adjustment plate is positioned in the plating groove, it is not necessary to separately position the center of the opening formed by the plurality of first plates and the center of the opening formed by the plurality of second plates. Therefore, even if the position of the center of the opening of the adjustment plate requires high precision, the adjustment plate can be easily positioned.
根據第九形態,提供一種調節板,用來調整在陽極與被鍍覆的基板之間的電流。此調節板具有:第一板本體部,具有:第一緣部,形成電流通過的第一開口;以及複數個第一板,用來縮小前述第一開口的徑;第二板本體部,具有:第二緣部,形成電流通過的第二開口;以及複數個第二板,用來縮小前述第二開口的徑,其中前述第一板本體部與第二板本體部彼此連接成以前述複數個第一板所形成的開口的中心與以前述複數個第二板所形成的開口的中心所連接的直線垂直於這些開口的徑方向。 According to a ninth aspect, there is provided an adjustment plate for adjusting a current between an anode and a substrate to be plated. The adjustment plate has: a first plate body portion having: a first edge portion forming a first opening through which current flows; and a plurality of first plates for reducing a diameter of the first opening; and a second plate body portion having a second edge portion forming a second opening through which current flows; and a plurality of second plates for reducing a diameter of the second opening, wherein the first plate body portion and the second plate body portion are connected to each other in a plurality of The lines connecting the centers of the openings formed by the first plates and the centers of the openings formed by the plurality of second plates are perpendicular to the radial direction of the openings.
根據第九形態,調節板具有以複數個第一板所形成的具有第一徑的開口與以複數個第二板所形成的具有第二徑的開口。藉由分別適當調整第一徑與與第二徑的大小,可更適當地調整通過調節板開口的電流。 又,為了以第一板所形成的開口中心與以第二板所形成的開口中心彼此一致,配置有第一板及第二板。因此,在將調節板定位於鍍覆槽時,不需要分別定位以複數個第一板所形成的開口中心與以複數個第二板所形成的開口中心。因此,即使在調節板的開口中心的位置需要高精確度的情況,也可以容易地定位調節板。 According to a ninth aspect, the adjustment plate has an opening having a first diameter formed by a plurality of first plates and an opening having a second diameter formed by the plurality of second plates. By appropriately adjusting the sizes of the first diameter and the second diameter, respectively, the current passing through the opening of the adjustment plate can be more appropriately adjusted. Further, the first plate and the second plate are disposed so that the center of the opening formed by the first plate and the center of the opening formed by the second plate coincide with each other. Therefore, when the adjustment plate is positioned in the plating groove, it is not necessary to separately position the center of the opening formed by the plurality of first plates and the center of the opening formed by the plurality of second plates. Therefore, even if the position of the center of the opening of the adjustment plate requires high precision, the adjustment plate can be easily positioned.
根據第十形態,在第七到九形態的任一形態中,被構成為以前述複數個第一板所形成的開口的徑,與前述複數個第二板所形成的開口的徑可彼此獨立調整。 According to a tenth aspect, in any one of the seventh to ninth aspects, the diameter of the opening formed by the plurality of first plates is different from the diameter of the opening formed by the plurality of second plates Adjustment.
根據第十形態,可以使複數個第一板劃定的開口的徑與複數個第二板劃定的開口的徑不同。藉此,例如可以將靠近基板的板所劃定的開口的徑變小,將離基板遠的板所劃定的開口的徑變大等,配合基板的特徵或處理條件,將開口的徑階段性地變小。 According to the tenth aspect, the diameter of the opening defined by the plurality of first plates can be different from the diameter of the opening defined by the plurality of second plates. Thereby, for example, the diameter of the opening defined by the plate close to the substrate can be made small, and the diameter of the opening defined by the plate far from the substrate can be increased, and the diameter of the opening can be matched with the characteristics of the substrate or the processing conditions. Sexually smaller.
根據第十一形態,提供一種鍍覆裝置。此鍍覆裝置具有:陽極支架,被構成為保持陽極;基板支架,面對前述陽極支架配置,構成為保持基板;陽極罩,具有:第二開口,一體地安裝於前述陽極支架,前述陽極與前述基板之間流動的電流通過;以及上述任一調節板,其中前述陽極罩具有:調節機構,調節前述第二開口的徑。 According to an eleventh aspect, a plating apparatus is provided. The plating apparatus has an anode holder configured to hold the anode, a substrate holder facing the anode support, and configured to hold the substrate, and an anode cover having a second opening integrally mounted to the anode holder, the anode and the anode And a current flowing between the substrates; and any one of the above adjustment plates, wherein the anode cover has an adjustment mechanism for adjusting a diameter of the second opening.
根據第十一形態,可以分別對於第一基板與第二基板,調節陽極罩的第二開口的徑。藉此,在第一基板與第二基板的特徵或處理條件彼此不同的情況下,可以抑制因終端效應的影響所導致的面內均勻性降低。具體來說,在終端效應的影響表現顯著的條件下對第二基板進行鍍覆時,藉由縮小第二開口的徑,集中電場於基板中央部,可以將基板中央部的膜厚變厚。又,當調節板的第一開口的徑縮小,則可以抑制在基板周緣部的成膜速度。因此,藉由調節調節板的第一開口的徑與陽極罩的第二開口的徑兩者,可以使基板W的面內均勻性進一步提升。 According to the eleventh aspect, the diameter of the second opening of the anode cover can be adjusted for the first substrate and the second substrate, respectively. Thereby, in the case where the characteristics or processing conditions of the first substrate and the second substrate are different from each other, it is possible to suppress a decrease in in-plane uniformity due to the influence of the terminal effect. Specifically, when the second substrate is plated under the condition that the influence of the terminal effect is remarkable, the film thickness of the central portion of the substrate can be increased by reducing the diameter of the second opening and concentrating the electric field on the central portion of the substrate. Further, when the diameter of the first opening of the regulating plate is reduced, the film forming speed at the peripheral portion of the substrate can be suppressed. Therefore, the in-plane uniformity of the substrate W can be further improved by adjusting both the diameter of the first opening of the adjustment plate and the diameter of the second opening of the anode cover.
根據第十二形態,提供一種鍍覆方法。此鍍覆方法步驟包括:配置陽極支架於鍍覆槽內,其中該陽極支架一體具備陽極罩,該陽極罩具有在陽極與基板之間流動的電流通過的第一開口;配置保持第一基板的基板支架於鍍覆槽內;在前述陽極罩與前述基板之間配置調節板,該調 節板具有前述陽極與前述基板之間流動的電流所通過的第二開口及第三開口;將前述第一開口的徑調節成第一徑,鍍覆於第一基板;將保持第二基板的基板支架配置於鍍覆槽內;以及將前述第一開口的徑調節成比前述第一徑更小的第二徑,同時分別變更前述調節板的第二開口及第三開口的徑來鍍覆前述第二基板。 According to a twelfth aspect, a plating method is provided. The plating method step includes: arranging an anode holder in the plating tank, wherein the anode holder integrally includes an anode cover having a first opening through which an electric current flowing between the anode and the substrate passes; and configuring the first substrate to be held a substrate holder is disposed in the plating tank; and an adjustment plate is disposed between the anode cover and the substrate The node plate has a second opening and a third opening through which the current flowing between the anode and the substrate passes; adjusting the diameter of the first opening to a first diameter, plating on the first substrate; and maintaining the second substrate The substrate holder is disposed in the plating tank; and the diameter of the first opening is adjusted to be smaller than the first diameter, and the diameters of the second opening and the third opening of the adjusting plate are respectively changed to be plated The aforementioned second substrate.
根據第十二形態,可以分別對於第一基板與第二基板,調節陽極罩的第一開口的徑。藉此,在第一基板與第二基板的特徵或處理條件彼此不同的情況下,可以抑制因終端效應的影響所導致的面內均勻性降低。具體來說,在終端效應的影響表現顯著的條件下對第二基板進行鍍覆時,藉由縮小第一開口的徑,集中電場於基板中央部,可以將基板中央部的膜厚變厚。又,藉由分別變更調節板的第二開口的徑與第三開口的徑,可以抑制在基板周緣部的成膜速度,可以使基板W的面內均勻性進提升。 According to the twelfth aspect, the diameter of the first opening of the anode cover can be adjusted for the first substrate and the second substrate, respectively. Thereby, in the case where the characteristics or processing conditions of the first substrate and the second substrate are different from each other, it is possible to suppress a decrease in in-plane uniformity due to the influence of the terminal effect. Specifically, when the second substrate is plated under the condition that the effect of the terminal effect is remarkable, the film thickness of the central portion of the substrate can be increased by reducing the diameter of the first opening and concentrating the electric field on the central portion of the substrate. Moreover, by changing the diameter of the second opening of the adjustment plate and the diameter of the third opening, the film formation speed at the peripheral edge portion of the substrate can be suppressed, and the in-plane uniformity of the substrate W can be improved.
10‧‧‧鍍覆裝置 10‧‧‧ plating device
18‧‧‧攪拌器 18‧‧‧Agitator
19‧‧‧攪拌器驅動裝置 19‧‧‧Agitator drive
20‧‧‧陽極支架 20‧‧‧Anode holder
21‧‧‧陽極 21‧‧‧Anode
25‧‧‧陽極罩 25‧‧‧anode cover
25a、60a、60A、60B‧‧‧開口 25a, 60a, 60A, 60B‧‧‧ openings
25b‧‧‧陽極罩安裝部 25b‧‧‧Anode cover installation
26‧‧‧緣部 26‧‧‧Edge
27‧‧‧光圈葉片 27‧‧‧ aperture blades
40‧‧‧基板支架 40‧‧‧Substrate support
50‧‧‧鍍覆槽 50‧‧‧ plating tank
52‧‧‧鍍覆處理槽 52‧‧‧ plating treatment tank
54‧‧‧鍍覆液排出槽 54‧‧‧ plating solution draining tank
55‧‧‧分隔壁 55‧‧‧ partition wall
56‧‧‧鍍覆液供給口 56‧‧‧ plating solution supply port
57‧‧‧鍍覆液排出口 57‧‧‧ plating solution discharge
58‧‧‧鍍覆液循環裝置 58‧‧‧ plating liquid circulation device
59‧‧‧鍍覆電源 59‧‧‧ plating power supply
60‧‧‧調節板 60‧‧‧Adjustment board
61‧‧‧板本體部 61‧‧‧ board body
61A‧‧‧第一板本體部 61A‧‧‧First board body
61B‧‧‧第二板本體部 61B‧‧‧Second board body
62‧‧‧吊下部 62‧‧‧ hanging lower part
63‧‧‧開口調節部 63‧‧‧ Opening adjustment department
63A‧‧‧第一開口調節部 63A‧‧‧First opening adjustment
63B‧‧‧第二開口調節部 63B‧‧‧Second opening adjustment
64‧‧‧緣部 64‧‧‧Edge
65‧‧‧銷孔 65‧‧‧ pinhole
66、92、111‧‧‧螺孔 66, 92, 111‧‧‧ screw holes
67‧‧‧停止器 67‧‧‧stop
68A‧‧‧模穴 68A‧‧‧ cavity
69A、69B‧‧‧開口部 69A, 69B‧‧‧ openings
70、70A、70B‧‧‧板體 70, 70A, 70B‧‧‧ board
71A‧‧‧第一板 71A‧‧‧ first board
71B‧‧‧第二板 71B‧‧‧ second board
72、72A、72B‧‧‧滑動銷 72, 72A, 72B‧‧‧ sliding pin
73‧‧‧導引銷 73‧‧‧ Guide pin
80、80A、80B‧‧‧環部件 80, 80A, 80B‧‧‧ ring parts
81、81A、81B‧‧‧滑動長孔 81, 81A, 81B‧‧‧ sliding long holes
81a‧‧‧最小徑部分 81a‧‧‧Minimum diameter section
81b‧‧‧最大徑部分 81b‧‧‧Maximum diameter section
90、90A、90B‧‧‧板壓部件 90, 90A, 90B‧‧‧ plate pressing parts
91‧‧‧導引長孔 91‧‧‧ Guided long hole
100、100A、100B‧‧‧旋轉部件 100, 100A, 100B‧‧‧ rotating parts
101‧‧‧環部 101‧‧‧ Ring Department
102‧‧‧桿部 102‧‧‧ pole
103‧‧‧支持長孔 103‧‧‧Support long holes
104‧‧‧凸部 104‧‧‧ convex
105‧‧‧支持銷 105‧‧‧Support pins
105A、105B‧‧‧手柄部 105A, 105B‧‧‧Handle
110、110A、110B‧‧‧保護部件 110, 110A, 110B‧‧‧ protective parts
120‧‧‧固定手段 120‧‧‧Fixed means
169A‧‧‧第一開口 169A‧‧‧first opening
169B‧‧‧第二開口 169B‧‧‧ second opening
Q‧‧‧鍍覆液 Q‧‧‧ plating solution
W‧‧‧基板 W‧‧‧Substrate
W1‧‧‧被鍍覆面 W1‧‧‧coated surface
第一圖是關於本實施形態的鍍覆裝置的概略側剖面圖。 The first figure is a schematic side cross-sectional view of the plating apparatus of the present embodiment.
第二圖是陽極罩的概略正面圖。 The second figure is a schematic front view of the anode cover.
第三圖是陽極罩的概略正面圖。 The third figure is a schematic front view of the anode cover.
第四圖是開口的徑為相對大狀態的調節板的前面側斜視圖。 The fourth figure is a front side oblique view of the adjustment plate in which the diameter of the opening is relatively large.
第五圖是開口的徑為相對大狀態的調節板的後面側斜視圖。 The fifth figure is a rear side oblique view of the regulating plate whose opening diameter is relatively large.
第六圖是開口的徑為相對小狀態的調節板的正面側斜視圖。 The sixth drawing is a front side oblique view of the regulating plate whose opening diameter is relatively small.
第七圖是調節板的分解斜視圖。 The seventh figure is an exploded perspective view of the adjustment plate.
第八圖是板本體部的前面側斜視圖。 The eighth figure is a front side oblique view of the plate body portion.
第九圖是板本體部的後面側斜視圖。 The ninth drawing is a rear side oblique view of the plate body portion.
第十圖表示環部件的前面側斜視圖。 The tenth diagram shows a front side oblique view of the ring member.
第十一圖表示旋轉部件的前面側斜視圖。 The eleventh figure shows a front side oblique view of the rotating member.
第十二圖表示構成板體的第一板的前面側斜視圖。 Fig. 12 is a front perspective view showing the first plate constituting the plate body.
第十三圖是板壓部件的前面側斜視圖。 The thirteenth view is a front side oblique view of the plate pressing member.
第十四圖是保護部件的前面側斜視圖。 Figure 14 is a front side oblique view of the protective member.
第十五圖是從調節板的前面側來看的部分正面圖。 The fifteenth diagram is a partial front view seen from the front side of the adjustment plate.
第十六圖是具有最大內徑的開口的調節板的後面圖。 Figure 16 is a rear view of the adjustment plate having the opening with the largest inner diameter.
第十七圖是具有最小內徑的開口的調節板的後面圖。 Figure 17 is a rear view of the adjustment plate having the opening with the smallest inner diameter.
第十八圖是關於其他實施形態的具有複數個第一板與複數個第二板的調節板的前面側斜視圖。 Fig. 18 is a front perspective view showing an adjustment plate having a plurality of first plates and a plurality of second plates in accordance with another embodiment.
第十九圖是關於其他實施形態的具有複數個第一板與複數個第二板的調節板的後面側斜視圖。 Fig. 19 is a rear perspective view showing an adjustment plate having a plurality of first plates and a plurality of second plates in another embodiment.
第二十圖是關於其他實施形態的調節板的第一板本體部與第二板本體部的分解斜視圖。 Fig. 20 is an exploded perspective view showing the first plate body portion and the second plate body portion of the adjusting plate of the other embodiment.
第二十一圖是關於其他實施形態的調節板的第一板本體部的分解斜視圖。 The twenty-first figure is an exploded perspective view of the first plate body portion of the adjustment plate of the other embodiment.
第二十二圖是關於其他實施形態的調節板的第二板本體部的分解斜視圖。 Fig. 22 is an exploded perspective view showing the second plate main body portion of the adjusting plate of the other embodiment.
第二十三圖表示高抗蝕開口率的基板與低抗蝕開口率的基板的鍍覆膜的輪廓圖。 Fig. 23 is a view showing the outline of a plating film of a substrate having a high resist opening ratio and a substrate having a low resist opening ratio.
第二十四圖表示具有厚晶種層的基板與具有薄晶種層的基板的鍍覆膜的輪廓圖。 The twenty-fourth graph shows a contour view of a plating film of a substrate having a thick seed layer and a substrate having a thin seed layer.
第二十五圖表示以具有相對高電阻的鍍覆液所鍍覆的基板與以具有相對低電阻的鍍覆液所鍍覆的基板的鍍覆膜的輪廓圖。 Fig. 25 is a contour view showing a plating film of a substrate plated with a plating liquid having a relatively high electric resistance and a substrate plated with a plating liquid having a relatively low electric resistance.
以下,參照圖式來說明關於本發明的實施形態。在以下說明的圖式中,相同或相當的構成要素賦予相同符號並省略重複說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same or corresponding components are designated by the same reference numerals, and the repeated description is omitted.
第一圖是關於本實施形態的鍍覆裝置的概略側剖面圖。如圖所示,關於本實施形態的鍍覆裝置10具有:陽極支架20,被構成為保持陽極21;基板支架40,被構成為保持基板W;以及鍍覆槽50,在內部收容陽極支架20與基板支架40。 The first figure is a schematic side cross-sectional view of the plating apparatus of the present embodiment. As shown in the figure, the plating apparatus 10 of the present embodiment includes an anode holder 20 configured to hold the anode 21, a substrate holder 40 configured to hold the substrate W, and a plating tank 50 for housing the anode holder 20 therein. With the substrate holder 40.
如第一圖所示,鍍覆槽50具有:鍍覆處理槽52,收容包含添加劑的鍍覆液Q;鍍覆液排出槽54,接收從鍍覆處理槽52溢流的鍍覆液Q並排出;以及分隔壁55,分隔鍍覆處理槽52與鍍覆液排出槽54。 As shown in the first figure, the plating tank 50 has a plating treatment tank 52 that accommodates a plating liquid Q containing an additive, a plating liquid discharge tank 54, and receives a plating liquid Q overflowing from the plating treatment tank 52. Discharge; and a partition wall 55 separating the plating treatment tank 52 and the plating liquid discharge tank 54.
保持陽極21的陽極支架20與保持基板W的基板支架40,相面對地設置成浸漬於鍍覆處理槽52內的鍍覆液Q,大致平行於陽極21與基板W的被鍍覆面W1。陽極21與基板W在被浸漬於鍍覆處理槽52的 鍍覆液Q的狀態下,被鍍覆電源59施加電壓。藉此,金屬離子在基板W的被鍍覆面W1被還原,形成膜於被鍍覆面W1。 The anode holder 20 holding the anode 21 and the substrate holder 40 holding the substrate W face each other so as to be plated with the plating liquid Q immersed in the plating treatment tank 52, and is substantially parallel to the plated surface W1 of the anode 21 and the substrate W. The anode 21 and the substrate W are immersed in the plating treatment tank 52 In the state of the plating solution Q, a voltage is applied to the plating power source 59. Thereby, the metal ions are reduced on the plated surface W1 of the substrate W, and a film is formed on the surface to be plated W1.
鍍覆處理槽52具有:鍍覆液供給口56,用來供給鍍覆液Q於槽內部。鍍覆液排出槽54具有:鍍覆液排出口57,用來排出從鍍覆處理槽52溢流的鍍覆液Q。鍍覆液供給口56配置於鍍覆處理槽52的底部,鍍覆液排出口57配置於鍍覆液排出槽54的底部。 The plating treatment tank 52 has a plating liquid supply port 56 for supplying the plating liquid Q inside the tank. The plating solution discharge tank 54 has a plating liquid discharge port 57 for discharging the plating liquid Q overflowing from the plating treatment tank 52. The plating solution supply port 56 is disposed at the bottom of the plating treatment tank 52, and the plating liquid discharge port 57 is disposed at the bottom of the plating solution discharge tank 54.
當鍍覆液Q從鍍覆液供給口56被供給至鍍覆處理槽52時,鍍覆液Q從鍍覆液處理槽52溢出,越過分隔壁55流入鍍覆液排出槽54。流入鍍覆液排出槽54的鍍覆液Q從鍍覆液排出口57排出,鍍覆液循環裝置58具有的過濾器等除去雜質。除去雜質的鍍覆液Q經由鍍覆液供給口56被鍍覆液循環裝置58供給至鍍覆液處理槽52。 When the plating solution Q is supplied from the plating solution supply port 56 to the plating treatment tank 52, the plating solution Q overflows from the plating solution processing tank 52, and flows into the plating liquid discharge tank 54 over the partition wall 55. The plating solution Q that has flowed into the plating solution discharge tank 54 is discharged from the plating liquid discharge port 57, and a filter or the like provided in the plating liquid circulation device 58 removes impurities. The plating solution Q from which the impurities are removed is supplied to the plating solution processing tank 52 by the plating liquid circulation device 58 via the plating liquid supply port 56.
陽極支架20具有:陽極罩25,用來調節陽極21與基板W之間的電場。陽極罩25為例如由介電質材料所組成的大致板狀部件,設於陽極支架20的前面。在此,陽極支架20的前面是指面對基板支架40側的面。也就是說,陽極罩25被配置於陽極21與基板支架40之間。陽極罩25在大致中央部具有:開口25a(相當於第二開口的一例),通過有在陽極21與基板W之間流動的電流。開口25a的徑較佳為比陽極21的徑更小。如後述,陽極罩25被構成為可調節開口25a的徑。 The anode holder 20 has an anode cover 25 for adjusting an electric field between the anode 21 and the substrate W. The anode cover 25 is, for example, a substantially plate-like member composed of a dielectric material, and is provided on the front surface of the anode holder 20. Here, the front surface of the anode holder 20 refers to a surface facing the side of the substrate holder 40. That is, the anode cover 25 is disposed between the anode 21 and the substrate holder 40. The anode cover 25 has an opening 25a (an example corresponding to the second opening) at a substantially central portion, and has a current flowing between the anode 21 and the substrate W. The diameter of the opening 25a is preferably smaller than the diameter of the anode 21. As will be described later, the anode cover 25 is configured to adjust the diameter of the opening 25a.
陽極罩25在其外周具有:陽極罩安裝部25b,用來一體地安裝陽極罩25於陽極支架20。又,陽極罩25的位置若在陽極支架20與基板支架40之間也可以,但較佳為比陽極支架20與基板支架40的中間位置更靠近陽極支架20的位置。又,例如陽極罩25也可以不安裝於陽極支架20,而配置於陽極支架20的前面。但是,如本實施形態,在陽極罩25被安裝於陽極支架20的情況下,因為對於陽極支架20的陽極罩25的相對位置被固定,所以可防止陽極21的位置與開口25a的位置偏離。 The anode cover 25 has an anode cover mounting portion 25b on its outer periphery for integrally mounting the anode cover 25 to the anode holder 20. Further, the position of the anode cover 25 may be between the anode holder 20 and the substrate holder 40, but it is preferably closer to the anode holder 20 than the intermediate position between the anode holder 20 and the substrate holder 40. Further, for example, the anode cover 25 may be disposed on the front surface of the anode holder 20 without being attached to the anode holder 20. However, in the present embodiment, when the anode cover 25 is attached to the anode holder 20, since the relative position of the anode cover 25 of the anode holder 20 is fixed, the position of the anode 21 can be prevented from deviating from the position of the opening 25a.
陽極支架20所保持的陽極21較佳為不溶性陽極。在陽極21為不溶性陽極的情況下,即使進行鍍覆處理,陽極21也不會溶解,陽極21的形狀也不會變化。因此,因為陽極罩25與陽極21的表面的位置關係(距離)不變化,所以可防止因陽極罩25與陽極21的表面的位置關係變 化導致陽極21與基板W之間的電場變化。 The anode 21 held by the anode holder 20 is preferably an insoluble anode. When the anode 21 is an insoluble anode, even if the plating treatment is performed, the anode 21 does not dissolve, and the shape of the anode 21 does not change. Therefore, since the positional relationship (distance) between the anode cover 25 and the surface of the anode 21 does not change, the positional relationship between the anode cover 25 and the surface of the anode 21 can be prevented from being changed. The resulting change in electric field between the anode 21 and the substrate W.
鍍覆裝置10更具有:調節板60,用來調整陽極21與基板W之間的電流。調節板60為例如由介電質材料所組成的大致板狀部件,被配置於陽極罩25與基板支架40(基板W)之間。調節板60具有:開口60a(相當於第一開口的一例),通過有陽極21與基板W之間流動的電流。開口60a的徑較佳為比基板W的徑小。如後述,調節板60被構成為可調節開口60a的徑。 The plating apparatus 10 further has an adjustment plate 60 for adjusting the current between the anode 21 and the substrate W. The adjustment plate 60 is, for example, a substantially plate-like member composed of a dielectric material, and is disposed between the anode cover 25 and the substrate holder 40 (substrate W). The adjustment plate 60 has an opening 60a (corresponding to an example of the first opening), and has a current flowing between the anode 21 and the substrate W. The diameter of the opening 60a is preferably smaller than the diameter of the substrate W. As will be described later, the adjustment plate 60 is configured to adjust the diameter of the opening 60a.
調節板60較佳為位於比陽極支架20與基板支架40的中間位置更靠近基板支架40的位置。調節板60被配置於越靠近基板支架40的位置,藉由調節調節板60的開口60a的徑,可以更正確地控制基板W的周緣部的膜厚。 The adjustment plate 60 is preferably located closer to the substrate holder 40 than the intermediate position between the anode holder 20 and the substrate holder 40. The adjustment plate 60 is disposed closer to the substrate holder 40, and by adjusting the diameter of the opening 60a of the adjustment plate 60, the film thickness of the peripheral portion of the substrate W can be more accurately controlled.
在調節板60與基板支架40之間,設有:攪拌器18,用來攪拌基板W的被鍍覆面W1附近的鍍覆液Q。攪拌器18為大致棒狀部件,被設於鍍覆處理槽52內成向著鉛直方向。攪拌器18的一端被固定於攪拌器驅動裝置19。攪拌器18被攪拌器驅動裝置19沿著基板W的被鍍覆面W1水平移動,藉此攪拌鍍覆液W。 Between the adjustment plate 60 and the substrate holder 40, a stirrer 18 for stirring the plating liquid Q in the vicinity of the plated surface W1 of the substrate W is provided. The agitator 18 is a substantially rod-shaped member and is disposed in the plating treatment tank 52 so as to face in the vertical direction. One end of the agitator 18 is fixed to the agitator drive unit 19. The agitator 18 is horizontally moved by the agitator driving device 19 along the plated surface W1 of the substrate W, thereby stirring the plating solution W.
接下來,詳細說明關於第一圖所示的陽極罩25。第二圖及第三圖是陽極罩25的概略正面圖。第二圖表示開口25a的徑相對大時的陽極罩25。第三圖表示開口25a的徑相對小時的陽極罩25。在此,陽極罩25的開口25a越小,從陽極21流到基板W的電流就越往基板W的被鍍覆面W1的中央部集中。因此,當開口25a變小,則基板W的被鍍覆面W1的中央部的膜厚有增大的傾向。 Next, the anode cover 25 shown in the first figure will be described in detail. The second and third figures are schematic front views of the anode cover 25. The second figure shows the anode cover 25 when the diameter of the opening 25a is relatively large. The third figure shows the anode cover 25 in which the diameter of the opening 25a is relatively small. Here, the smaller the opening 25a of the anode cover 25 is, the more the current flowing from the anode 21 to the substrate W is concentrated toward the central portion of the plated surface W1 of the substrate W. Therefore, when the opening 25a is small, the film thickness of the center portion of the plated surface W1 of the substrate W tends to increase.
如第二圖所示,陽極罩25具有大致環狀的緣部26。如第二圖所示的陽極罩25的開口25a的徑大小為最大。在此情況的開口25a的徑與緣部26的內徑一致。 As shown in the second figure, the anode cover 25 has a substantially annular edge portion 26. The diameter of the opening 25a of the anode cover 25 as shown in the second figure is the largest. The diameter of the opening 25a in this case coincides with the inner diameter of the edge portion 26.
如第三圖所示,陽極罩25具有:複數個光圈葉片27(相當於調節機構的一例),被構成為可調節開口25a。光圈葉片27協同運作來劃定開口25a。光圈葉片27分別藉由與相機的光圈機構相同的結構使開口25a的徑擴大或縮小(調節開口25a的徑)。如第三圖所示的陽極罩25的開口 25a,被光圈葉片27形成為非圓形(例如多角形)。此情況的開口25a的徑是指多角形的對面的邊的最短距離或內接圓的直徑。或者是,開口25a的徑也可以用具有與開口面積相等的面積的圓來定義。又,陽極21與光圈葉片27的面對陽極21的面的距離為例如0mm以上8mm以下。 As shown in the third figure, the anode cover 25 has a plurality of aperture blades 27 (corresponding to an example of an adjustment mechanism), and is configured to be an adjustable opening 25a. The aperture blades 27 cooperate to define the opening 25a. The aperture blades 27 respectively expand or contract the diameter of the opening 25a (the diameter of the opening 25a) by the same structure as the aperture mechanism of the camera. The opening of the anode cover 25 as shown in the third figure 25a is formed into a non-circular shape (for example, a polygonal shape) by the aperture blade 27. The diameter of the opening 25a in this case means the shortest distance of the opposite side of the polygon or the diameter of the inscribed circle. Alternatively, the diameter of the opening 25a may be defined by a circle having an area equal to the opening area. Further, the distance between the anode 21 and the surface of the diaphragm blade 27 facing the anode 21 is, for example, 0 mm or more and 8 mm or less.
各光圈葉片27為例如藉由手動使開口25a的徑擴大或縮小。又,各光圈葉片27也可以構成為利用空氣壓力或電動的驅動力來驅動。使用光圈葉片27的調節機構具有可相對廣範圍地改變開口25a的特徵。又,在基板為圓形的情況下,陽極罩25的開口25a為圓形者為較佳。但是,在可相對廣範圍改變的徑的開口25a中,以開口25a從最小徑到最大徑的所有範圍來維持完全的圓形伴隨著結構上的困難。一般來說,陽極21與基板W之間流動的電流所通過的開口不是完全的圓形的情況下,電場的方位角分布不均,開口形狀有被轉寫於基板W的周緣部所形成的鍍覆膜厚分布的可能性。但是,因為陽極罩25被一體地安裝於陽極支架20,所以可以充分獲得與基板間的距離,即使在開口並非完全圓形的情況下,也可以最大程度地抑制對鍍覆膜厚分布賦予的影響。 Each of the diaphragm blades 27 is formed by, for example, manually expanding or reducing the diameter of the opening 25a. Further, each of the diaphragm blades 27 may be configured to be driven by air pressure or electric driving force. The adjustment mechanism using the aperture blade 27 has a feature that can change the opening 25a relatively widely. Further, when the substrate is circular, it is preferable that the opening 25a of the anode cover 25 is circular. However, in the opening 25a of the diameter which can be changed over a relatively wide range, maintaining the complete circular shape from the minimum diameter to the maximum diameter of the opening 25a is accompanied by structural difficulties. In general, when the opening through which the current flowing between the anode 21 and the substrate W passes is not completely circular, the azimuth distribution of the electric field is uneven, and the shape of the opening is formed by the peripheral portion of the substrate W. The possibility of plating the thickness of the film. However, since the anode cover 25 is integrally attached to the anode holder 20, the distance from the substrate can be sufficiently obtained, and even when the opening is not completely circular, the thickness distribution of the plating film can be suppressed to the utmost extent. influences.
接下來,詳細說明關於第一圖所示的調節板60。第四圖表示開口60a的徑為相對大狀態的調節板60的前面側斜視圖,第五圖表示開口60a的徑為相對大狀態的調節板60的後面側斜視圖。又,第六圖表示開口60a的徑為相對小狀態的調節板60的正面側斜視圖。 Next, the adjustment plate 60 shown in the first figure will be described in detail. The fourth diagram shows a front side oblique view of the adjustment plate 60 in which the diameter of the opening 60a is relatively large, and the fifth diagram shows a rear side oblique view of the adjustment plate 60 in which the diameter of the opening 60a is relatively large. Further, the sixth diagram shows a front side oblique view of the adjustment plate 60 in which the diameter of the opening 60a is relatively small.
如第四~六圖所示,調節板60具有大致板狀的板本體部61。板本體部61在其上部的左右端面具有:一對吊下部62,用來懸架並吊下調節板60於第一圖所示的鍍覆處理槽52的緣。又,板本體部61在其大致中央部具有開口60a。開口60a是被設於板本體部61的開口調節部63所形成。 As shown in the fourth to sixth figures, the adjustment plate 60 has a substantially plate-shaped plate body portion 61. The plate main body portion 61 has a pair of hanging lower portions 62 on the left and right end faces of the upper portion thereof for suspending and hoisting the edge of the plating plate 60 of the plating treatment groove 52 shown in the first figure. Further, the plate main body portion 61 has an opening 60a at a substantially central portion thereof. The opening 60a is formed by the opening adjusting portion 63 provided in the plate main body portion 61.
如第五圖所示,在調節板60的背面側,安裝有旋轉部件100,旋轉部件100構成開口調節部63的一部分。又,如第六圖所示,調節板60具有:板體70,被構成為縮小開口60a的徑。旋轉部件100及板體70的細節後述。 As shown in FIG. 5, a rotating member 100 is attached to the back side of the adjusting plate 60, and the rotating member 100 constitutes a part of the opening adjusting portion 63. Further, as shown in the sixth diagram, the adjustment plate 60 has a plate body 70 which is configured to reduce the diameter of the opening 60a. Details of the rotating member 100 and the plate body 70 will be described later.
第七圖是調節板60的分解斜視圖。如第七圖所示,調節板 60具有:板本體部61、板體70、環部件80、板壓部件90、旋轉部件100以及保護部件110。由板體70、環部件80、板壓部件90、旋轉部件100以及保護部件110構成開口調節部63。又,調節板60具有:緣部64,與板本體部61一起形成開口60a。 The seventh diagram is an exploded perspective view of the adjustment plate 60. As shown in the seventh figure, the adjustment board The 60 has a plate main body portion 61, a plate body 70, a ring member 80, a plate pressing member 90, a rotating member 100, and a protective member 110. The opening adjustment portion 63 is constituted by the plate body 70, the ring member 80, the plate pressing member 90, the rotating member 100, and the protective member 110. Further, the adjustment plate 60 has an edge portion 64 that forms an opening 60a together with the plate body portion 61.
板體70具有用來縮小開口60a的複數個第一板71,位於調節板60的緣部64的前面側。又,在本實施形態,調節板60的前面側是指面對第一圖所示的基板支架40的面。但是,在其他實施形態,也可以將調節板60配置於第一圖所示的鍍覆處理槽52成調節板60的前面側面對第一圖所示的陽極支架20。 The plate body 70 has a plurality of first plates 71 for reducing the opening 60a on the front side of the edge portion 64 of the regulating plate 60. Further, in the present embodiment, the front side of the adjustment plate 60 refers to the surface facing the substrate holder 40 shown in the first figure. However, in other embodiments, the adjustment plate 60 may be disposed on the front side surface of the adjustment plate 60 in the plating treatment tank 52 shown in the first figure to the anode holder 20 shown in the first figure.
環部件80被構成為使複數個第一板71在開口60a的徑方向同步移動。環部件80沿著調節板60的緣部64配置。在本實施形態,環部件80沿著調節板60的緣部64的內周面配置。但並不限於此,環部件80也可以配置於例如調節板60的緣部64的的前面側。 The ring member 80 is configured to synchronously move a plurality of first plates 71 in the radial direction of the opening 60a. The ring member 80 is disposed along the edge portion 64 of the adjustment plate 60. In the present embodiment, the ring member 80 is disposed along the inner circumferential surface of the edge portion 64 of the adjustment plate 60. However, the present invention is not limited thereto, and the ring member 80 may be disposed, for example, on the front side of the edge portion 64 of the adjustment plate 60.
板壓部件90被配置於板體70的前面側(與環部件80相反側)。旋轉部件100被配置於板本體部61的後面側,如後述地與環部件80結合。以下詳細說明關於構成調節板60的各部件。 The plate pressing member 90 is disposed on the front side of the plate body 70 (opposite to the ring member 80). The rotating member 100 is disposed on the rear side of the plate body portion 61, and is coupled to the ring member 80 as will be described later. The respective components constituting the adjustment plate 60 will be described in detail below.
第八圖表示板本體部61的前面側斜視圖,第九圖表示板本體部61的後面側斜視圖。如第八圖所示,板本體部61為大致板狀部件,在其大致中央部具有開口60a。在板本體部61的前面側固定有緣部64,緣部64具有與開口60a大致相同的開口。緣部64與板本體部61一起形成開口60a。如第九圖所示,板本體部61在後面側具有複數個銷孔65,銷孔65是用來插入可滑動地支持旋轉部件100的支持銷。又,緣部64在其前面側具有複數個螺孔66,螺孔66用來螺合固定板壓部件90與保護部件110的螺桿。 The eighth diagram shows a front side oblique view of the board body portion 61, and the ninth diagram shows a rear side oblique view of the board body portion 61. As shown in the eighth figure, the plate main body portion 61 is a substantially plate-shaped member, and has an opening 60a at a substantially central portion thereof. An edge portion 64 is fixed to the front side of the plate body portion 61, and the edge portion 64 has substantially the same opening as the opening 60a. The edge portion 64 forms an opening 60a together with the plate body portion 61. As shown in the ninth diagram, the plate body portion 61 has a plurality of pin holes 65 on the rear side, and the pin holes 65 are for inserting a support pin that slidably supports the rotary member 100. Further, the edge portion 64 has a plurality of screw holes 66 on the front side thereof, and the screw holes 66 are used to screw the screw for fixing the plate pressing member 90 and the protective member 110.
第十圖表示環部件80的前面側斜視圖。如上述,環部件80沿著第八圖及第九圖所示的板本體部61的開口60a的內周面配置。因此,環部件80的外徑被構成為與構成板本體部61的開口60a的緣部64的內徑大致一致。所以,環部件80的內徑成為開口60a的最大內徑。如圖所示,環部件80(相當於第一移動機構)在其前面側具有複數個滑動長孔81。在 本實施形態,在環部件80設有八個滑動長孔81,滑動長孔81對應構成板體70的第一板71的數量。滑動長孔81可以向著環部件80的後面側來貫穿,也可以不這樣。滑動長孔81被構成為相對於開口60a的徑方向傾斜。換句話說,滑動長孔81被傾斜配置成其長孔的長方向不向著開口60a的中心。各滑動長孔81設於環部件80成彼此相對於開口60a的中心軸旋轉對稱。在本實施形態,因為設有八個滑動長孔81,所以各滑動長孔81成為八次旋轉對稱。 The tenth diagram shows a front side oblique view of the ring member 80. As described above, the ring member 80 is disposed along the inner circumferential surface of the opening 60a of the plate main body portion 61 shown in the eighth and ninth views. Therefore, the outer diameter of the ring member 80 is configured to substantially coincide with the inner diameter of the edge portion 64 of the opening 60a constituting the plate main body portion 61. Therefore, the inner diameter of the ring member 80 becomes the maximum inner diameter of the opening 60a. As shown, the ring member 80 (corresponding to the first moving mechanism) has a plurality of sliding elongated holes 81 on the front side thereof. in In the present embodiment, eight ring-shaped elongated holes 81 are provided in the ring member 80, and the number of the sliding long holes 81 corresponds to the number of the first plates 71 constituting the plate body 70. The sliding long hole 81 may penetrate toward the rear side of the ring member 80, or may not. The sliding long hole 81 is configured to be inclined with respect to the radial direction of the opening 60a. In other words, the sliding long hole 81 is inclined such that the long direction of the long hole does not face the center of the opening 60a. Each of the sliding elongated holes 81 is provided in the ring member 80 so as to be rotationally symmetrical with respect to each other with respect to the central axis of the opening 60a. In the present embodiment, since eight sliding long holes 81 are provided, each of the sliding long holes 81 has eight rotational symmetry.
第十一圖表示旋轉部件100的前面側斜視圖。旋轉部件100具有:環部101以及安將於環部101的板狀桿部102。環部101被固定於第十圖所示的環部件80。環部101的內徑被構成為與環部件80的內徑大致一致。桿部102被結合於環部101的外周面,藉由使桿部102在環部101的周方向搖動,環部101在搖動角度的範圍周方向旋轉。 The eleventh diagram shows a front side oblique view of the rotating member 100. The rotating member 100 has a ring portion 101 and a plate-shaped rod portion 102 that is placed on the ring portion 101. The ring portion 101 is fixed to the ring member 80 shown in the tenth diagram. The inner diameter of the ring portion 101 is configured to substantially coincide with the inner diameter of the ring member 80. The rod portion 102 is coupled to the outer peripheral surface of the ring portion 101, and the ring portion 101 is rotated in the circumferential direction of the range of the rocking angle by swinging the rod portion 102 in the circumferential direction of the ring portion 101.
在環部101的外周設有四個凸部104,在個凸部104形成有沿著環部101的周方向的支持長孔103。如後述,支持長孔103藉由第九圖所示的板本體部61的銷孔65所固定的支持銷,被支持成可滑動。 Four convex portions 104 are provided on the outer circumference of the ring portion 101, and support long holes 103 along the circumferential direction of the ring portion 101 are formed in the convex portions 104. As will be described later, the support long hole 103 is supported to be slidable by a support pin fixed by the pin hole 65 of the plate main body portion 61 shown in FIG.
第十二圖表示構成板體70的第一板71的前面側斜視圖。如圖所示,第一板71是內周緣形成圓弧狀的扇形部件。第一板71,如第七圖所示,與其他的第一板71彼此重疊,全部形成板體70的大致圓形的內周緣。在本實施形態,以八個第一板71構成板體70,但不受限於此,以任意數量的第一板71可構成板體70。 Fig. 12 is a front perspective view showing the first plate 71 constituting the plate body 70. As shown in the figure, the first plate 71 is a sector-shaped member in which an inner peripheral edge is formed in an arc shape. The first plate 71, as shown in the seventh figure, overlaps with the other first plates 71, and all form a substantially circular inner circumference of the plate body 70. In the present embodiment, the plate body 70 is constituted by the eight first plates 71. However, the present invention is not limited thereto, and the plate body 70 may be configured by any number of the first plates 71.
在第一板71的後面側,設有滑動銷72,滑動銷72被構成為在第十圖所示的環部件80的滑動長孔81內滑動。雖然在本實施形態,一個滑動銷72設於第一板71,但不受限於此,也可以將兩個以上的滑動銷72設於第一板71。在此情況下,第十圖所示的環部件80的滑動長孔81的數量需要配合兩個以上的滑動銷72的數量。 On the rear side of the first plate 71, a slide pin 72 is provided, and the slide pin 72 is configured to slide in the sliding long hole 81 of the ring member 80 shown in FIG. In the present embodiment, one slide pin 72 is provided on the first plate 71. However, the present invention is not limited thereto, and two or more slide pins 72 may be provided on the first plate 71. In this case, the number of the sliding long holes 81 of the ring member 80 shown in the tenth figure needs to match the number of the two or more sliding pins 72.
又,在第一板71的前面側,設有導引銷73,導引銷73被構成為在後述的第十三圖所示的板壓部件90的導引長孔91滑動。雖然在本實施形態,兩個導引銷73被設於第一板71,但不受限於此,一個或三個以上的導引銷73也可以被設於第一板71。 Further, on the front side of the first plate 71, a guide pin 73 is provided, and the guide pin 73 is configured to slide on the guide long hole 91 of the plate pressing member 90 shown in the thirteenth drawing to be described later. In the present embodiment, the two guide pins 73 are provided on the first plate 71. However, the present invention is not limited thereto, and one or three or more guide pins 73 may be provided on the first plate 71.
第十三圖是板壓部件90的前面側斜視圖。板壓部件90是大致板狀部件,在其大致中央部形成有開口60a。板壓部件90的開口60a的徑具有與第十圖所示的環部件80的內徑大致相同的徑。板壓部件90具有複數個導引長孔91。在本實施形態,16個導引長孔91被設於板壓部件90,兩個導引長孔91分別對應第十二圖所示的第一板71的兩個導引銷73。導引長孔91的數量可對應導引銷73的數量適當變更。導引長孔91被形成在平行於第一板71的同步移動方向。又,板壓部件90具有複數個螺孔92。在第八圖所示的板本體部61的緣部64所形成的螺孔66的位置與螺孔92的位置配合,藉由將螺桿螺合,可以將板壓部件90固定於板本體部61。 The thirteenth drawing is a front side oblique view of the plate pressing member 90. The plate pressing member 90 is a substantially plate-shaped member, and an opening 60a is formed in a substantially central portion thereof. The diameter of the opening 60a of the plate pressing member 90 has a diameter substantially the same as the inner diameter of the ring member 80 shown in the tenth diagram. The plate pressing member 90 has a plurality of guiding elongated holes 91. In the present embodiment, 16 guide long holes 91 are provided in the plate pressing member 90, and the two guide long holes 91 correspond to the two guide pins 73 of the first plate 71 shown in Fig. 12, respectively. The number of the guide long holes 91 can be appropriately changed corresponding to the number of the guide pins 73. The guide long hole 91 is formed in a synchronous moving direction parallel to the first plate 71. Further, the plate pressing member 90 has a plurality of screw holes 92. The position of the screw hole 66 formed in the edge portion 64 of the plate main body portion 61 shown in FIG. 8 is matched with the position of the screw hole 92, and the plate pressing member 90 can be fixed to the plate main body portion 61 by screwing the screw. .
板壓部件90被配置成其後面側接觸板體70的前面側。因此,板體70的第一板71在開口60a的徑方向同步移動時,第一板71接觸板壓部件90並同步移動。為了減低板壓部件90與第一板71的磨耗,板壓部件90較佳為由例如PTFE等低摩擦樹脂所構成。 The plate pressing member 90 is disposed such that its rear side contacts the front side of the plate body 70. Therefore, when the first plate 71 of the plate body 70 moves synchronously in the radial direction of the opening 60a, the first plate 71 contacts the plate pressing member 90 and moves in synchronization. In order to reduce the wear of the plate pressing member 90 and the first plate 71, the plate pressing member 90 is preferably made of a low friction resin such as PTFE.
第十四圖是保護部件110的前面側斜視圖。保護部件110是大致板狀部件,在其大致中央部形成有開口60a。保護部件110的開口60a的徑具有與第十圖所示的環部件80的內徑大致相同的徑。保護部件110被配置於板壓部件90的前面側。保護部件110具有複數個螺孔111。在第八圖所示的螺孔66及第十三圖所示的螺孔92的位置與螺孔11的位置配合,藉由將螺桿螺合,可以將保護部件110固定於板本體部61。保護部件110為例如由氯乙烯等所構成,保護板壓部件90的前面側。 The fourteenth view is a front side oblique view of the protective member 110. The protective member 110 is a substantially plate-shaped member, and an opening 60a is formed in a substantially central portion thereof. The diameter of the opening 60a of the protective member 110 has a diameter substantially the same as the inner diameter of the ring member 80 shown in FIG. The protective member 110 is disposed on the front side of the plate pressing member 90. The protective member 110 has a plurality of screw holes 111. The screw hole 66 shown in FIG. 8 and the screw hole 92 shown in FIG. 13 are engaged with the position of the screw hole 11, and the protective member 110 can be fixed to the plate main body portion 61 by screwing the screw. The protective member 110 is made of, for example, vinyl chloride or the like, and protects the front side of the plate pressing member 90.
接下來,詳細說明關於使第十二圖所示的第一板71同步移動的機構。第十五圖是從調節板60的前面側來看的部分正面圖。在第十五圖中,旋轉部件100、複數個第一板71、板壓部件90以及環部件80的滑動長孔81,分別被透過表示,其他部件為了簡略化圖示而省略。 Next, a mechanism for causing the first plate 71 shown in Fig. 12 to move in synchronization will be described in detail. The fifteenth diagram is a partial front view as seen from the front side of the adjustment plate 60. In the fifteenth diagram, the rotating member 100, the plurality of first plates 71, the plate pressing members 90, and the sliding long holes 81 of the ring member 80 are respectively transmitted, and the other members are omitted for simplification of illustration.
如第十五圖所示,複數個第一板71被配置成具有:重疊部75,與其他第一板71彼此部分重疊。複數個第一板71的內周緣形成為大致圓形。在圖示的狀態中,複數個第一板71的滑動銷72位於滑動長孔81的大致中間部,導引銷73位於導引長孔91的大致中間部。在圖示的狀態中,複數個第一板71的內周緣的內徑比調節板60的開口60a的內徑更小。 因此,複數個第一板71使調節板60的開口60a的內徑縮小。 As shown in the fifteenth diagram, the plurality of first plates 71 are configured to have overlapping portions 75 that partially overlap each other with the other first plates 71. The inner circumference of the plurality of first plates 71 is formed in a substantially circular shape. In the illustrated state, the slide pin 72 of the plurality of first plates 71 is located at a substantially intermediate portion of the slide long hole 81, and the guide pin 73 is located at a substantially intermediate portion of the guide long hole 91. In the illustrated state, the inner diameter of the inner circumference of the plurality of first plates 71 is smaller than the inner diameter of the opening 60a of the adjustment plate 60. Therefore, the plurality of first plates 71 reduce the inner diameter of the opening 60a of the adjustment plate 60.
當旋轉部件100的桿部102在箭頭A1或A2的方向,即在環部101的周方向移動,則與環部101的圖未顯示的環部件80也在其周方向旋轉。例如,當桿部102在箭頭A1方向(圖中順時針方向)移動,則環部件80在順時針方向旋轉。藉此,第一板71的滑動銷72在滑動長孔81內滑動,滑動長孔81的最小徑部分81a向著滑動銷72移動。此時,隨著滑動長孔81的最小徑部分81a向著滑動銷72移動,第一板71向著開口60a的徑方向內側移動。因為第一板71的導引銷73在導引長孔90的內部滑動,所以防止第一板71的周方向移動及旋轉運動。因此,第一板71可以確實在徑方向同步移動。 When the rod portion 102 of the rotating member 100 moves in the direction of the arrow A1 or A2, that is, in the circumferential direction of the ring portion 101, the ring member 80 not shown in the figure of the ring portion 101 also rotates in the circumferential direction. For example, when the lever portion 102 moves in the direction of the arrow A1 (clockwise in the drawing), the ring member 80 rotates in the clockwise direction. Thereby, the slide pin 72 of the first plate 71 slides in the slide long hole 81, and the minimum diameter portion 81a of the slide long hole 81 moves toward the slide pin 72. At this time, as the minimum diameter portion 81a of the sliding long hole 81 moves toward the slide pin 72, the first plate 71 moves toward the inner side in the radial direction of the opening 60a. Since the guide pin 73 of the first plate 71 slides inside the guide long hole 90, the circumferential movement and the rotational movement of the first plate 71 are prevented. Therefore, the first plate 71 can be surely moved in the radial direction.
又,例如,當桿部102在箭頭A2方向(圖中的逆時針方向)移動,則環部件80在逆時針方向旋轉。藉此,第一板71的滑動銷72在滑動長孔81內滑動,滑動長孔81的最大徑部分81b向著滑動銷72移動。此時,隨著滑動長孔81的最大徑部分81b向著滑動銷72移動,第一板71向著開口60a的徑方向外側同步移動。 Further, for example, when the lever portion 102 moves in the direction of the arrow A2 (counterclockwise direction in the drawing), the ring member 80 rotates in the counterclockwise direction. Thereby, the slide pin 72 of the first plate 71 slides in the slide long hole 81, and the largest diameter portion 81b of the slide long hole 81 moves toward the slide pin 72. At this time, as the maximum diameter portion 81b of the sliding long hole 81 moves toward the slide pin 72, the first plate 71 moves synchronously toward the outer side in the radial direction of the opening 60a.
複數個第一板71分別同樣在徑方向同步移動。因此,維持第一板71與其他第一板71的角度關係,複數個第一板71可在徑方向移動。藉此,相較於如相機的光圈機構,複數個光圈葉片以特定軸為中心旋轉將開口的徑變小的情況,更可保持以第一板71所形成的內周緣的正圓形。 The plurality of first plates 71 are also synchronously moved in the radial direction. Therefore, maintaining the angular relationship between the first plate 71 and the other first plates 71, the plurality of first plates 71 can be moved in the radial direction. Thereby, compared with the aperture mechanism such as a camera, when a plurality of aperture blades rotate around a specific axis to reduce the diameter of the opening, the inner circumference of the first plate 71 can be maintained in a perfect circle.
第十六圖是具有最大內徑的開口60a的調節板60的後面圖,第十七圖是具有最小內徑的開口60a的調節板60的後面圖。如第十六圖所示,當調節板60具有最大內徑的開口60a時,旋轉部件100的桿部102位於相對右方向,被設於板本體部61的停止器67限制其可動範圍。在第十六圖所示的狀態,圖未顯示的第一板71在開口60a的徑方向位於最外位置,第一板71的內周緣與旋轉部件100的環部101的內周緣大致一致。 Fig. 16 is a rear view of the regulating plate 60 having the opening 60a having the largest inner diameter, and Fig. 17 is a rear view of the regulating plate 60 having the opening 60a having the smallest inner diameter. As shown in Fig. 16, when the regulating plate 60 has the opening 60a having the largest inner diameter, the rod portion 102 of the rotating member 100 is located in the rightward direction, and the stopper 67 provided in the plate body portion 61 limits the movable range thereof. In the state shown in Fig. 16, the first plate 71 not shown is located at the outermost position in the radial direction of the opening 60a, and the inner periphery of the first plate 71 substantially coincides with the inner periphery of the ring portion 101 of the rotary member 100.
在板本體部61設有四個支持銷105。支持銷105可滑動地嚙合於環部101的凸部104所設有的支持長孔103。藉此,當操作桿部102時,環部101被導引成沿著支持長孔103在周方向旋轉。 Four support pins 105 are provided in the plate body portion 61. The support pin 105 is slidably engaged with the support long hole 103 provided in the convex portion 104 of the ring portion 101. Thereby, when the lever portion 102 is operated, the ring portion 101 is guided to rotate in the circumferential direction along the support long hole 103.
如第十七圖所示,當調節板60具有最小內徑的開口60a時, 旋轉部件100的桿部102位於相對左方向,被設在板本體部61的停止器67限制其可動範圍。在第十七圖所示的狀態中,複數個第一板71在開口60a的徑方向位於最內位置,第一板71使調節板60的開口60a縮小。 As shown in FIG. 17, when the adjustment plate 60 has the opening 60a having the smallest inner diameter, The rod portion 102 of the rotating member 100 is located in the leftward direction, and the stopper 67 provided in the plate body portion 61 limits the movable range. In the state shown in Fig. 17, the plurality of first plates 71 are located at the innermost position in the radial direction of the opening 60a, and the first plate 71 narrows the opening 60a of the regulating plate 60.
桿部102也可以被例如機械的致動器自動操作,也可以由作業員手動操作。又,桿部102也可以固定在一對停止器67間的任意位置。 The stem 102 can also be operated automatically by, for example, a mechanical actuator or manually by an operator. Further, the rod portion 102 may be fixed at any position between the pair of stoppers 67.
如以上說明,根據關於本實施形態的調節板60,藉由以複數個第一板71來縮小開口60a的徑,可以調節開口60a的徑。藉此,在第一基板與第二基板的特徵或處理條件彼此不同的情況下,可以抑制因終端效應的影響導致面內均勻性降低。具體來說,在終端效應的影響表現顯著的條件下對基板進行鍍覆時,藉由縮小調節板60的開口60a的徑,可以抑制基板週緣部的成膜速度,使基板的面內均勻性提升。又,因為第一板71被構成為同步移動,所以維持與其他第一板71的角度關係,複數個第一板71可在徑方向移動。因此,相較於如相機的光圈機構,複數個光圈葉片以特定軸為中心旋轉來縮小開口的徑的情況,更可以保持以第一板71所形成的內周緣的正圓形狀。 As described above, according to the adjustment plate 60 of the present embodiment, the diameter of the opening 60a can be adjusted by reducing the diameter of the opening 60a by the plurality of first plates 71. Thereby, in the case where the characteristics or processing conditions of the first substrate and the second substrate are different from each other, it is possible to suppress a decrease in in-plane uniformity due to the influence of the terminal effect. Specifically, when the substrate is plated under the condition that the effect of the terminal effect is remarkable, by reducing the diameter of the opening 60a of the adjustment plate 60, the film formation speed at the peripheral portion of the substrate can be suppressed, and the in-plane uniformity of the substrate can be made. Upgrade. Further, since the first plate 71 is configured to move in synchronization, the angle relationship with the other first plates 71 is maintained, and the plurality of first plates 71 are movable in the radial direction. Therefore, compared with the aperture mechanism such as a camera, a plurality of aperture blades are rotated around a specific axis to reduce the diameter of the opening, and the inner circumference of the first plate 71 can be maintained in a perfect circular shape.
又,在本實施形態,第一板71具有滑動銷72環部件80具有滑動長孔81。但是不受限於此,環部件80也可以具有滑動銷72,第一板71也可以具有對應於此的滑動長孔81。如此,即使是在構成第一板71與環部件80的情況下,藉由環部件80在周方向旋轉,滑動銷72在滑動長孔81內滑動,第一板71可以在徑方向移動。 Further, in the present embodiment, the first plate 71 has the slide pin 72, and the ring member 80 has the slide long hole 81. However, it is not limited thereto, and the ring member 80 may have a slide pin 72, and the first plate 71 may have a sliding long hole 81 corresponding thereto. As described above, even when the first plate 71 and the ring member 80 are formed, the ring member 80 is rotated in the circumferential direction, and the slide pin 72 slides in the sliding long hole 81, so that the first plate 71 can move in the radial direction.
在本實施形態,第一板71具有導引銷73,板壓部件90具有導引長孔91。但是不受限於此,板壓部件90也可以具有導引銷73,第一板71也可以具有對應於此的導引長孔91。如此,即使是在構成第一板71與板壓部件90的情況下,第一板71藉由環部件80移動時,導引銷73在導引長孔91內滑動,可防止第一板71的周方向的移動及旋轉運動。 In the present embodiment, the first plate 71 has the guide pin 73, and the plate pressing member 90 has the guide long hole 91. However, it is not limited thereto, and the plate pressing member 90 may have the guide pin 73, and the first plate 71 may have the guide elongated hole 91 corresponding thereto. Thus, even in the case where the first plate 71 and the plate pressing member 90 are formed, when the first plate 71 is moved by the ring member 80, the guide pin 73 slides in the guide slit 91, and the first plate 71 can be prevented. The movement and rotation of the circumferential direction.
在本實施形態,在旋轉部件100的環部101形成具有支持長孔103的凸部104,在板本體部61固定有支持銷105。但是不受限於此,旋轉部件100的環部101也可以具有支持銷105,板本體部61也可以具有對應於此的支持長孔103。如此,即使在構成旋轉部件100與板本體部61 的情況下,環部101被桿部102搖動時,支持銷105在支持長孔103內滑動,可使環部101在其周方向旋轉。 In the present embodiment, the convex portion 104 having the long hole 103 is formed in the ring portion 101 of the rotating member 100, and the support pin 105 is fixed to the plate main portion 61. However, the ring portion 101 of the rotating member 100 may have a support pin 105, and the plate body portion 61 may have a support long hole 103 corresponding thereto. Thus, even when the rotating member 100 and the board body portion 61 are formed In the case where the ring portion 101 is rocked by the rod portion 102, the support pin 105 slides in the support long hole 103, and the ring portion 101 can be rotated in the circumferential direction.
再者,在本實施形態,調節板60做為縮小開口60a的徑的手段,只具有板體70(複數個第一板71)。但是,調節板60也可以具有使不同於複數個第一板71的其他複數個第二板,與複數個第二板同步移動的機構。在此情況下,複數個第二板被配置在垂直於開口60a的徑方向的方向偏離複數個第一板71的位置。使此複數個第二板同步移動的機構與使複數個第一板71同步移動的上述機構相同,藉此,複數個第二板在開口60a的徑方向同步移動。以下,參照圖式來說明具體例。 Further, in the present embodiment, the adjustment plate 60 serves as means for reducing the diameter of the opening 60a, and has only the plate body 70 (a plurality of first plates 71). However, the adjustment plate 60 may have a mechanism for moving the plurality of second plates different from the plurality of first plates 71 in synchronization with the plurality of second plates. In this case, the plurality of second plates are disposed at positions deviated from the plurality of first plates 71 in a direction perpendicular to the radial direction of the opening 60a. The mechanism for synchronously moving the plurality of second plates is the same as the mechanism for moving the plurality of first plates 71 in synchronization, whereby a plurality of second plates are synchronously moved in the radial direction of the opening 60a. Hereinafter, a specific example will be described with reference to the drawings.
第十八圖是關於其他實施形態的具有複數個第一板與複數個第二板的調節板的前面側斜視圖,第十九圖是同一調節板的後面側斜視圖。在以下說明的圖式的第四~十七圖所示的部分所對應的構成要素,附加「A」或「B」的符號於第四~十七圖所使用的符號,省略重複說明。 Fig. 18 is a front perspective view showing an adjustment plate having a plurality of first plates and a plurality of second plates in another embodiment, and Fig. 19 is a rear perspective view of the same adjustment plate. The components corresponding to the portions shown in the fourth to seventeenth drawings of the drawings described below are denoted by the symbols used in the fourth to seventeenth drawings, and the overlapping description will be omitted.
如第十八圖及第十九圖所示,本實施形態的調節板60具有第一板本體部61A與第二板本體部61B。第一板本體部61A具有第一開口調節部63A,第二板本體部61B具有第二開口調節部63B。第一板本體部61A與第二板本體部61B藉由螺桿、螺帽等任意固定手段120彼此連接。在圖示的調節板60,第一板本體部61A與第二板本體部61B密接成彼此無空隙,藉由固定手段120彼此連接。但不受限於此,第一板本體部61A與第二板本體部61B也可以具有空隙來彼此連接。又,固定手段120也可以具有調整機構,調整第一板本體部61A與第二板本體部61B的空隙的大小。藉此,可以任意調整後述的複數個第一板71A(參照第二十一圖)與複數個第二板71B(參照第二十二圖)彼此的距離。 As shown in Figs. 18 and 19, the adjustment plate 60 of the present embodiment has a first plate main portion 61A and a second plate main portion 61B. The first plate body portion 61A has a first opening adjustment portion 63A, and the second plate body portion 61B has a second opening adjustment portion 63B. The first plate main body portion 61A and the second plate main body portion 61B are connected to each other by any fixing means 120 such as a screw or a nut. In the illustrated adjustment plate 60, the first plate body portion 61A and the second plate body portion 61B are in close contact with each other without a gap therebetween, and are connected to each other by the fixing means 120. However, the first plate body portion 61A and the second plate body portion 61B may have gaps to be connected to each other. Further, the fixing means 120 may have an adjustment mechanism for adjusting the size of the gap between the first plate main portion 61A and the second plate main portion 61B. Thereby, the distance between the plurality of first plates 71A (refer to the twenty-first diagram) and the plurality of second plates 71B (see the twenty-second diagram) to be described later can be arbitrarily adjusted.
第一板本體部61A具有開口部69A,開口部69A用來使旋轉部件100A的手柄部105A露出外部。又,第二板體部61B具有開口部69B,開口部69B用來使旋轉部件100B的手柄部105B露出外部。可以使用任意的致動器或以手動分別獨立操作從開口部69A露出的手柄部105A及從開口部69B露出的手柄部105B。藉此,可獨立地使第二十一圖所示的複數個第一板71A與複數個第二板71B在徑方向同步移動。 The first plate main body portion 61A has an opening portion 69A for exposing the handle portion 105A of the rotating member 100A to the outside. Further, the second plate body portion 61B has an opening portion 69B for exposing the handle portion 105B of the rotating member 100B to the outside. The handle portion 105A exposed from the opening portion 69A and the handle portion 105B exposed from the opening portion 69B can be independently operated by using an arbitrary actuator or manually. Thereby, the plurality of first plates 71A and the plurality of second plates 71B shown in FIG. 11 can be independently moved in the radial direction.
第二十圖是第一板本體部61A與第二板本體部61B的分解斜視圖。如圖所示,第一板本體部61A與第二板本體部61B彼此連接成設有旋轉部件100A的面與設有旋轉部件100B的面相面對。第一板本體部61A具有可收容旋轉部件100A與旋轉部件100B的模穴68A。在連接第一板本體部61A與第二板本體部61B時,模穴68A被構成為收容旋轉部件100A與旋轉部件100B。 Fig. 20 is an exploded perspective view of the first plate body portion 61A and the second plate body portion 61B. As shown in the figure, the first plate body portion 61A and the second plate body portion 61B are connected to each other such that the surface on which the rotating member 100A is provided faces the face on which the rotating member 100B is provided. The first plate main body portion 61A has a cavity 68A that can accommodate the rotating member 100A and the rotating member 100B. When the first plate main portion 61A and the second plate main portion 61B are connected, the cavity 68A is configured to house the rotating member 100A and the rotating member 100B.
第一板本體部61A在其大致中央部具有電流通過的第一開口169A。又,第二板本體部61B在其大致中央部具有電流通過的第二開口169B。第一板本體部61A與第二板本體部61B彼此連接成第一開口169A的中心與第二開口169B的中心為同心。換句話說,第一板本體部61A與第二板本體部61B彼此連接成第一開口169A的中心與第二開口169B的中心連接的直線垂直於各開口的徑方向。 The first plate body portion 61A has a first opening 169A through which a current passes at a substantially central portion thereof. Further, the second plate main body portion 61B has a second opening 169B through which a current passes at a substantially central portion thereof. The first plate body portion 61A and the second plate body portion 61B are connected to each other such that the center of the first opening 169A is concentric with the center of the second opening 169B. In other words, the first plate body portion 61A and the second plate body portion 61B are connected to each other such that a line connecting the center of the first opening 169A and the center of the second opening 169B is perpendicular to the radial direction of each opening.
第二十一圖是第一板本體部61A的分解斜視圖。如圖所示,第一板本體部61A具有:板本體70A、環部件80A、板壓部件90A、旋轉部件100A以及保護部件110A。在本實施形態,構成板體70A的複數個第一板71A具有兩個滑動銷72A。環部件80A具有對應兩個滑動銷72A的兩個一組的滑動長孔81A。 The twenty-first figure is an exploded perspective view of the first plate body portion 61A. As shown in the figure, the first plate body portion 61A has a plate body 70A, a ring member 80A, a plate pressing member 90A, a rotating member 100A, and a protective member 110A. In the present embodiment, the plurality of first plates 71A constituting the plate body 70A have two slide pins 72A. The ring member 80A has a pair of sliding elongated holes 81A corresponding to the two sliding pins 72A.
第二十二圖是第二板本體部61B的分解斜視圖。如圖所示,第二板本體部61B具有:板本體70B、環部件80B、板壓部件90B、旋轉部件100B以及保護部件110B。在本實施形態,構成板體70B的複數個第一板71B具有兩個滑動銷72B。環部件80B具有對應兩個滑動銷72B的兩個一組的滑動長孔81B。 The twenty-second figure is an exploded perspective view of the second plate body portion 61B. As shown in the figure, the second plate body portion 61B has a plate body 70B, a ring member 80B, a plate pressing member 90B, a rotating member 100B, and a protective member 110B. In the present embodiment, the plurality of first plates 71B constituting the plate body 70B have two slide pins 72B. The ring member 80B has two sets of sliding elongated holes 81B corresponding to the two slide pins 72B.
第一板本體部61A與第二板本體部61B彼此連接成第二十一圖所示的以複數個第一板71A所形成的開口的中心與第二十二圖所示的以複數個第二板71B所形成的開口的中心成為同心。換句話說,第一板本體部61A與第二板本體部61B彼此連接成第二十一圖所示的以複數個第一板71A所形成的開口的中心與第二十二圖所示的以複數個第二板71B所形成的開口的中心連接的直線垂直於各開口的徑方向。 The first plate body portion 61A and the second plate body portion 61B are connected to each other as a center of the opening formed by the plurality of first plates 71A shown in FIG. 11 and a plurality of the plurality shown in the twenty-second diagram. The center of the opening formed by the second plate 71B is concentric. In other words, the first plate body portion 61A and the second plate body portion 61B are connected to each other as the center of the opening formed by the plurality of first plates 71A shown in FIG. 11 and the second twenty-first figure. A straight line connecting the centers of the openings formed by the plurality of second plates 71B is perpendicular to the radial direction of each of the openings.
如此,根據具有複數個第一板71A與複數個第二板71B的 調節板60,以複數個第一板71A與複數個第二板71B兩者,可以縮小開口60a的徑。在此情況下,藉由複數個第一板71A與複數個第二板71B,更可以抑制基板周緣部的成膜速度。因此,可以使具有基板周緣部的膜厚變厚傾向的基板的面內均勻性提高。 Thus, according to the plurality of first plates 71A and the plurality of second plates 71B The adjustment plate 60 can reduce the diameter of the opening 60a by the plurality of first plates 71A and the plurality of second plates 71B. In this case, by the plurality of first plates 71A and the plurality of second plates 71B, the film formation speed of the peripheral portion of the substrate can be suppressed. Therefore, it is possible to improve the in-plane uniformity of the substrate having a tendency to increase the thickness of the peripheral portion of the substrate.
在將以往的調節板複數個設置於鍍覆槽內的情況下,需要進行複數個調節板的各開口中心的定位,耗費時間。對此,在共通的調節板60設有複數個第一板71A與複數個第二板71B的情況下,以第一板71A所形成的開口中心與以第二板71B所形成的開口中心被相對地固定。因此,在定位調節板60於鍍覆槽詞,以複數個第一板71A所形成的開口中心,與以複數個第二板71B所形成的開口中心,不需要個別定位。因此,即使是在對調節板60的開口中心的位置要求高精確度的情況下,也可以容易地定位調節板60。 When a plurality of conventional adjustment plates are installed in the plating tank, it is necessary to perform positioning of the center of each of the plurality of adjustment plates, which takes time. On the other hand, in the case where the common adjustment plate 60 is provided with a plurality of first plates 71A and a plurality of second plates 71B, the center of the opening formed by the first plate 71A and the center of the opening formed by the second plate 71B are Relatively fixed. Therefore, in positioning the adjustment plate 60 in the plating groove, the center of the opening formed by the plurality of first plates 71A and the center of the opening formed by the plurality of second plates 71B do not need to be individually positioned. Therefore, even in the case where high precision is required for the position of the center of the opening of the adjustment plate 60, the adjustment plate 60 can be easily positioned.
又,因為調節板60具有的板體70A是由複數個第一板71A所構成,所以其開口形狀嚴格來說並非正圓。因此,完全除去因其開口形狀所導致的施加在基板W的電場分散有困難。但是,由於具有複數個第二板71B,因複數個第一板71A的開口形狀所導致的電場分散與因複數個第二板71B的開口形狀所導致的電場分散彼此抵銷,緩和此電場分散,可使形成於基板W的鍍覆膜接近正圓。 Further, since the plate 70A of the adjustment plate 60 is composed of a plurality of first plates 71A, the opening shape is not strictly round. Therefore, it is difficult to completely remove the electric field dispersion applied to the substrate W due to the shape of the opening. However, since there are a plurality of second plates 71B, the electric field dispersion due to the opening shape of the plurality of first plates 71A and the electric field dispersion due to the opening shapes of the plurality of second plates 71B cancel each other, thereby alleviating the electric field dispersion. The plating film formed on the substrate W can be made close to a perfect circle.
再者,調節板60如第十五圖所示,複數個第一板71具有與鄰接的第一板71的重疊部75以及與鄰接的第一板71的不重疊的部分。因為此重疊部75比不重疊的部分厚度大,所以在重疊部75與不重疊部分,電場抑制效果不同。因此,可在開口的周方向產生電場分散。另一方面,在調節板60除了複數個第一板71A以外還具有複數個第二板71B的情況下,複數個第二板71B的重疊部的周方向位置偏離于複數個第一板71A的重疊部的周方向位置,所以可緩和起因於兩板重疊部的電場分散。較佳為藉由複數個第二板71B的重疊部的周方向與複數個第一板71A的重疊部的周方向位置交錯配列,可進一步緩和電場分散。 Further, as shown in the fifteenth diagram, the plurality of first plates 71 have overlapping portions 75 with the adjacent first plates 71 and portions that do not overlap with the adjacent first plates 71. Since the overlapping portion 75 is thicker than the portion that does not overlap, the electric field suppressing effect is different between the overlapping portion 75 and the non-overlapping portion. Therefore, electric field dispersion can be generated in the circumferential direction of the opening. On the other hand, in the case where the adjustment plate 60 has a plurality of second plates 71B in addition to the plurality of first plates 71A, the circumferential position of the overlapping portion of the plurality of second plates 71B is deviated from the plurality of first plates 71A. Since the position of the overlapping portion is in the circumferential direction, the electric field dispersion due to the overlapping portions of the two plates can be alleviated. It is preferable that the circumferential direction of the overlapping portion of the plurality of second plates 71B and the circumferential direction of the overlapping portion of the plurality of first plates 71A are alternately arranged, whereby the electric field dispersion can be further alleviated.
又,根據具有複數個第一板71A與複數個第二板71B的調節板,可以使複數個第一板71A所劃定的開口60A的徑與複數個第二板71B 所劃定的開口60B的徑不同。藉此,配合例如靠近基板的板所劃定的開口的徑變小,遠離基板的板所劃定的開口的徑變大等基板的特徵或處理條件,可階段性地縮小開口的徑。 Further, according to the adjustment plate having the plurality of first plates 71A and the plurality of second plates 71B, the diameter of the opening 60A defined by the plurality of first plates 71A and the plurality of second plates 71B can be made. The diameter of the defined opening 60B is different. Thereby, for example, the diameter of the opening defined by the plate close to the substrate is reduced, and the diameter of the opening which is defined by the plate which is away from the substrate becomes large, and the diameter of the opening can be reduced stepwise.
接下來,以第一圖所示的鍍覆裝置10,說明關於對基板W鍍覆處理的程序。如上述,終端效應的影響因基板W的特徵及處理基板W的條件等而不同。因此,在單一鍍覆裝置10對終端效應的影響不同的複數個基板W進行鍍覆的情況,為了抑制因終端效應導致的膜厚的面內均勻性降低,需要配合各基板W的特徵及處理基板W的條件等,來調節施加於基板W的電場。 Next, the procedure for the plating process of the substrate W will be described using the plating apparatus 10 shown in the first figure. As described above, the influence of the terminal effect differs depending on the characteristics of the substrate W and the conditions of the substrate W to be processed. Therefore, in the case where a plurality of substrates W having different influences on the terminal effect are plated by the single plating apparatus 10, in order to suppress the in-plane uniformity of the film thickness due to the terminal effect, it is necessary to match the characteristics and processing of the respective substrates W. The electric field applied to the substrate W is adjusted by the conditions of the substrate W and the like.
在關於本實施形態的鍍覆裝置10,藉由配合基板W的特徵或處理基板W的條件,調節至少陽極罩25的開口25a的徑,可以抑制基板W的鍍覆膜的面內均勻性的降低。 In the plating apparatus 10 of the present embodiment, by adjusting the characteristics of the substrate W or the condition of the processing substrate W, at least the diameter of the opening 25a of the anode cover 25 can be adjusted, and the in-plane uniformity of the plating film of the substrate W can be suppressed. reduce.
具體來說,在第二基板的抗蝕開口率比第一基板的抗蝕開口率更低的情況下,如上述,第二基板即使在基板上形成鍍覆膜,抗蝕開口率相較於相對高的第一基板,從基板中央部到電接點的電阻值變化較小。因此,即使在第二基板上形成一定程度的鍍覆膜,對第二基板的終端效應的影響仍持續大。因此,在基板的抗蝕開口率以外的條件都相同,來鍍覆第一基板與第二基板的情況,第二基板相較於第一基板,基板周邊部的膜厚更厚,基板中央部的膜厚相對薄。因此,以鍍覆裝置10鍍覆第二基板時,陽極罩25的開口25a的徑比鍍覆第一基板時的開口25a的徑更小。藉此,可以將第二基板的基板中央部的膜厚變厚。因此,在第一基板與第二基板兩者,可以抑制因終端效應的影響導致的面內均勻性降低。 Specifically, in the case where the resist opening ratio of the second substrate is lower than the resist opening ratio of the first substrate, as described above, even if the second substrate forms a plating film on the substrate, the resist opening ratio is compared with The relatively high first substrate has a small change in resistance value from the central portion of the substrate to the electrical contact. Therefore, even if a certain degree of plating film is formed on the second substrate, the influence on the terminal effect of the second substrate continues to be large. Therefore, the conditions other than the resist opening ratio of the substrate are the same, and the first substrate and the second substrate are plated. The second substrate is thicker than the first substrate, and the film is thicker at the peripheral portion of the substrate. The film thickness is relatively thin. Therefore, when the second substrate is plated by the plating apparatus 10, the diameter of the opening 25a of the anode cover 25 is smaller than the diameter of the opening 25a when the first substrate is plated. Thereby, the film thickness of the central portion of the substrate of the second substrate can be increased. Therefore, in both the first substrate and the second substrate, it is possible to suppress a decrease in in-plane uniformity due to the influence of the terminal effect.
又,在第二基板具有的晶種層比第一基板具有的晶種層更薄的情況,如上述,對於第二基板的終端效應變得顯著。因此,在除了晶種層的厚度以外的條件相同來鍍覆第一基板與第二基板的情況下,第二基板相較於第一基板,基板周邊部的厚度更厚,基板中央部的膜厚相對薄。因此,以鍍覆裝置10鍍覆第二基板時,陽極罩25的開口25a的徑比鍍覆第一基板時的開口25a的徑更小。藉此,可以將第二基板的基板中央部的膜厚變厚。因此,在第一基板與第二基板兩者,可以抑制因終端效應的影響 導致的面內均勻性降低。 Further, in the case where the seed layer of the second substrate is thinner than the seed layer of the first substrate, as described above, the terminal effect on the second substrate becomes remarkable. Therefore, when the first substrate and the second substrate are plated in the same conditions except for the thickness of the seed layer, the thickness of the second substrate is thicker than that of the first substrate, and the film at the central portion of the substrate is thicker. Thick and relatively thin. Therefore, when the second substrate is plated by the plating apparatus 10, the diameter of the opening 25a of the anode cover 25 is smaller than the diameter of the opening 25a when the first substrate is plated. Thereby, the film thickness of the central portion of the substrate of the second substrate can be increased. Therefore, both the first substrate and the second substrate can suppress the influence due to the terminal effect The resulting in-plane uniformity is reduced.
再者,在第二基板使用比用於第一基板的鍍覆液的電阻值更低的鍍覆液來鍍覆的情況下,如上述,相對於第二基板的終端效應變得顯著。因此,在鍍覆液的電阻值以外的條件相同來鍍覆第一基板與第二基板的情況下,第二基板相較於第一基板,基板周邊部的厚度更厚,基板中央部的膜厚相對薄。因此,以鍍覆裝置10鍍覆第二基板時,陽極罩25的開口25a的徑比鍍覆第一基板時的開口25a的徑更小。藉此,可以將第二基板的基板中央部的膜厚變厚。因此,在第一基板與第二基板兩者,可以抑制因終端效應的影響導致的面內均勻性降低。 Further, in the case where the second substrate is plated with a plating solution having a lower resistance value than the plating solution for the first substrate, as described above, the terminal effect with respect to the second substrate becomes remarkable. Therefore, when the first substrate and the second substrate are plated under the same conditions except for the resistance value of the plating solution, the second substrate has a thicker thickness at the peripheral portion of the substrate than the first substrate, and the film at the central portion of the substrate Thick and relatively thin. Therefore, when the second substrate is plated by the plating apparatus 10, the diameter of the opening 25a of the anode cover 25 is smaller than the diameter of the opening 25a when the first substrate is plated. Thereby, the film thickness of the central portion of the substrate of the second substrate can be increased. Therefore, in both the first substrate and the second substrate, it is possible to suppress a decrease in in-plane uniformity due to the influence of the terminal effect.
再者,關於本實施形態的鍍覆裝置10,除了調節陽極罩25的開口25a的徑以外,藉由調節調節板60的開口60a的徑,可以使基板W的鍍覆膜的面內均勻性提升。 Further, in the plating apparatus 10 of the present embodiment, in addition to adjusting the diameter of the opening 25a of the anode cover 25, the in-plane uniformity of the plating film of the substrate W can be adjusted by adjusting the diameter of the opening 60a of the regulating plate 60. Upgrade.
調節板60被設於比陽極罩25更接近基板W的位置。因此,通過調節板60的開口60a的鍍覆電流,變得難以擴散至基板W的周緣部。因此,當調節板60的開口60a的徑變小,可以將基板W的周緣部的膜厚變薄,當開口60a的徑變大,可以將基板W的周緣部的膜厚變厚。 The adjustment plate 60 is provided at a position closer to the substrate W than the anode cover 25. Therefore, it becomes difficult to diffuse to the peripheral portion of the substrate W by the plating current of the opening 60a of the adjustment plate 60. Therefore, when the diameter of the opening 60a of the adjustment plate 60 is small, the film thickness of the peripheral portion of the substrate W can be made thin, and when the diameter of the opening 60a is increased, the film thickness of the peripheral portion of the substrate W can be increased.
調節板60的開口60a的徑,較佳為對應藉由調節陽極罩25的開口25a的徑而變化的基板W的膜厚分布來適當調節。因此,當對於第一基板的特徵或處理第一基板的條件不同的第二基板進行鍍覆時,為了將陽極罩25的開口25a的徑變得比處理第一基板時的徑更小或更大來調整徑,並適當變更調節板60的開口60a的徑。在調節板60具有如第十八至二十二圖所示的複數個第一板71A與複數個第二板71B的情況下,可分別獨立地適當變更以各板所形成的開口部69A、69B。因此,對於特徵及處理條件不同的複數個基板進行鍍覆時,可以構成可控制因終端效應的影響導致的面內均勻性降低的裝置。 The diameter of the opening 60a of the adjusting plate 60 is preferably appropriately adjusted in accordance with the film thickness distribution of the substrate W which is changed by adjusting the diameter of the opening 25a of the anode cover 25. Therefore, when the second substrate having different characteristics of the first substrate or the condition for processing the first substrate is plated, the diameter of the opening 25a of the anode cover 25 is made smaller or smaller than the diameter when the first substrate is processed. The diameter is adjusted to be large, and the diameter of the opening 60a of the regulating plate 60 is appropriately changed. In the case where the adjustment plate 60 has the plurality of first plates 71A and the plurality of second plates 71B as shown in the eighteenth to twenty-secondth embodiments, the opening portions 69A formed by the respective plates can be appropriately changed independently, 69B. Therefore, when a plurality of substrates having different characteristics and processing conditions are plated, it is possible to configure a device that can control the reduction in in-plane uniformity due to the influence of the terminal effect.
接下來,具體說明使陽極罩25的開口25a的徑與調節板60的開口60a的徑變化導致基板W的鍍覆膜的輪廓變化。以下,表示使用第四~十七圖所示的調節板60的例。 Next, the change in the diameter of the opening 25a of the anode cover 25 and the diameter of the opening 60a of the adjustment plate 60 will be specifically described to cause a change in the profile of the plating film of the substrate W. Hereinafter, an example in which the adjustment plate 60 shown in the fourth to seventeenth drawings is used will be described.
第二十三圖表示高抗蝕開口率(80%)的基板W與低抗蝕 開口率(10%)的基板W的鍍覆膜的輪廓圖。圖中,「AM」表示陽極罩25的開口25a的徑,「RP」表示調節板60的開口60a的徑,「HDP」表示高抗蝕開口率的基板W,「LDP」表示低抗蝕開口率的基板W。又,高抗蝕開口率的基板W與低抗蝕開口率的基板W晶種層厚度皆為50nm~100nm,第二十三圖的輪廓是使用相對低電阻的鍍覆液來鍍覆的情況下的輪廓。 Figure 23 shows the substrate with high resist opening ratio (80%) and low resist Outline view of the plating film of the substrate W at an aperture ratio (10%). In the figure, "AM" indicates the diameter of the opening 25a of the anode cover 25, "RP" indicates the diameter of the opening 60a of the adjustment plate 60, "HDP" indicates the substrate W having a high resist opening ratio, and "LDP" indicates a low resist opening. Rate of substrate W. Further, the substrate W having a high resist opening ratio and the seed layer thickness of the substrate W having a low resist opening ratio are both 50 nm to 100 nm, and the outline of the 23rd drawing is plated with a relatively low-resistance plating solution. Under the contour.
如圖所示,在以開口25a的徑做為230mm,以開口60a的徑做為276mm來鍍覆處理高抗蝕開口率的基板W的情況(以下稱條件A),基板中央部的膜厚變厚,基板周緣部的膜厚變薄。對此,在以開口25a的徑做為270mm,以開口60a的徑做為276mm來鍍覆處理高抗蝕開口率的基板W的情況(以下稱條件C),因為條件C是開口25a的徑比條件A大,所以基板中央部的膜厚變薄。又,在以開口25a的徑做為270mm,以開口60a的徑做為280mm來鍍覆處理高抗蝕開口率的基板W的情況(以下稱條件B),因為條件B是開口60a的徑比條件C大,所以基板周緣部的膜厚變厚。 As shown in the figure, when the diameter W of the opening 25a is 230 mm and the diameter of the opening 60a is 276 mm, the substrate W having a high resist opening ratio is plated (hereinafter referred to as condition A), and the film thickness at the central portion of the substrate is used. The thickness is increased, and the film thickness at the peripheral portion of the substrate is reduced. On the other hand, in the case where the diameter of the opening 25a is 270 mm and the diameter of the opening 60a is 276 mm, the substrate W having a high resist opening ratio is plated (hereinafter referred to as condition C) because the condition C is the diameter of the opening 25a. Since the thickness is larger than the condition A, the film thickness at the central portion of the substrate is reduced. In addition, when the diameter W of the opening 25a is 270 mm and the diameter of the opening 60a is 280 mm, the substrate W having a high resist opening ratio is plated (hereinafter referred to as condition B) because the condition B is the diameter ratio of the opening 60a. Since the condition C is large, the film thickness at the peripheral portion of the substrate is increased.
在以開口25a的徑做為270mm,以開口60a的徑做為276mm來鍍覆處理低抗蝕開口率的基板W的情況(以下稱條件E),基板中央部的膜厚變薄,基板周緣部的膜厚變厚。這意味著因終端效應的影響,基板周緣部的膜厚變厚。對此,在以開口25a的徑做為220mm,以開口60a的徑做為276mm來鍍覆處理低抗蝕開口率的基板W的情況(以下稱條件F),因為條件F是開口25a的徑比條件E小,所以基板中央部的膜厚變薄。又,在以開口25a的徑做為220mm,以開口60a的徑做為274mm來鍍覆處理低抗蝕開口率的基板W的情況(以下稱條件D),因為條件D是開口60a的徑比條件F大,所以基板周緣部的膜厚變薄。 When the diameter W of the opening 25a is 270 mm and the diameter of the opening 60a is 276 mm, the substrate W having a low resist opening ratio is plated (hereinafter referred to as condition E), and the film thickness at the center portion of the substrate is thinned, and the periphery of the substrate is thinned. The film thickness of the part is thick. This means that the film thickness at the peripheral portion of the substrate becomes thick due to the influence of the terminal effect. On the other hand, in the case where the diameter of the opening 25a is 220 mm and the diameter of the opening 60a is 276 mm, the substrate W having a low resist opening ratio is plated (hereinafter referred to as condition F) because the condition F is the diameter of the opening 25a. Since the thickness is smaller than the condition E, the film thickness at the central portion of the substrate is reduced. In addition, when the diameter W of the opening 25a is 220 mm and the diameter of the opening 60a is 274 mm, the substrate W having a low resist opening ratio is plated (hereinafter referred to as condition D) because the condition D is the diameter ratio of the opening 60a. Since the condition F is large, the film thickness at the peripheral portion of the substrate is reduced.
如第二十三圖所示,即使是終端效應的影響表現相對顯著的低抗蝕開口率的基板W,因為開口25a的徑比高抗蝕開口率的基板W的鍍覆處理所適合的開口25a的徑(270mm、條件B、C)變得更小,所以可抑制因終端效應導致的基板W的膜厚的面內均勻性降低(參照條件D、F)。再者,藉由調節調節板60的開口60a的徑,可以調節基板W的周緣部的膜厚,可進一步抑制因終端效應導致的基板W的膜厚的面內均勻性降低(參 照條件D)。 As shown in the twenty-third figure, even the substrate W having a low resist opening ratio which exhibits a relatively significant effect of the terminal effect is suitable for the opening of the substrate W due to the opening ratio of the opening 25a. Since the diameter of 25a (270 mm, conditions B and C) is smaller, it is possible to suppress the in-plane uniformity of the film thickness of the substrate W due to the terminal effect (see conditions D and F). Further, by adjusting the diameter of the opening 60a of the regulating plate 60, the film thickness of the peripheral portion of the substrate W can be adjusted, and the in-plane uniformity of the film thickness of the substrate W due to the end effect can be further suppressed. According to condition D).
第二十四圖表示具有厚晶種層(500nm以上)的基板W與具有薄晶種層(50~100nm)的基板W的鍍覆膜的輪廓圖。又,具有厚晶種層的基板W與具有薄晶種層的基板W,抗蝕開口率皆為10%,第二十四圖是用相對低電阻的鍍覆液來鍍覆的情況下的輪廓。 The twenty-fourth graph shows a profile of a plating film of a substrate W having a thick seed layer (500 nm or more) and a substrate W having a thin seed layer (50 to 100 nm). Further, the substrate W having a thick seed layer and the substrate W having a thin seed layer have a resist opening ratio of 10%, and the twenty-fourth sheet is plated with a relatively low-resistance plating solution. profile.
如圖所示,在以開口25a的徑做為230mm,以開口60a的徑做為276mm來鍍覆處理具有厚晶種層的基板W的情況(以下稱條件A),基板中央部的膜厚變厚,基板周緣部的膜厚變薄。對此,在以開口25a的徑做為270mm,以開口60a的徑做為276mm來鍍覆處理具有厚晶種層的基板W的情況(以下稱條件C),因為條件C是開口25a的徑比條件A大,所以基板中央部的膜厚變薄。又,在以開口25a的徑做為270mm,以開口60a的徑做為278mm來鍍覆處理具有厚晶種層的基板W的情況(以下稱條件B),因為條件B是開口60a的徑比條件C大,所以基板周緣部的膜厚變厚。 As shown in the figure, when the diameter W of the opening 25a is 230 mm and the diameter of the opening 60a is 276 mm, the substrate W having a thick seed layer is plated (hereinafter referred to as condition A), and the film thickness at the central portion of the substrate is obtained. The thickness is increased, and the film thickness at the peripheral portion of the substrate is reduced. On the other hand, in the case where the diameter of the opening 25a is 270 mm and the diameter of the opening 60a is 276 mm, the substrate W having a thick seed layer is plated (hereinafter referred to as condition C) because the condition C is the diameter of the opening 25a. Since the thickness is larger than the condition A, the film thickness at the central portion of the substrate is reduced. In addition, when the diameter W of the opening 25a is 270 mm and the diameter of the opening 60a is 278 mm, the substrate W having a thick seed layer is plated (hereinafter referred to as condition B) because the condition B is the diameter ratio of the opening 60a. Since the condition C is large, the film thickness at the peripheral portion of the substrate is increased.
在以開口25a的徑做為270mm,以開口60a的徑做為276mm來鍍覆處理具有薄晶種層的基板W的情況(以下稱條件E),基板中央部的膜厚變薄,基板周緣部的膜厚變厚。這意味著因終端效應的影響,基板周緣部的膜厚變厚。對此,在以開口25a的徑做為220mm,以開口60a的徑做為276mm來鍍覆處理具有薄晶種層的基板W的情況(以下稱條件F),因為條件F是開口25a的徑比條件E小,所以基板中央部的膜厚變厚。又,在以開口25a的徑做為220mm,以開口60a的徑做為274mm來鍍覆處理具有薄晶種層的基板W的情況(以下稱條件D),因為條件D是開口60a的徑比條件F大,所以基板周緣部的膜厚變薄。 When the diameter of the opening 25a is 270 mm and the diameter of the opening 60a is 276 mm, the substrate W having a thin seed layer is plated (hereinafter referred to as condition E), and the film thickness at the center portion of the substrate is thinned, and the periphery of the substrate is thinned. The film thickness of the part is thick. This means that the film thickness at the peripheral portion of the substrate becomes thick due to the influence of the terminal effect. On the other hand, in the case where the diameter of the opening 25a is 220 mm and the diameter of the opening 60a is 276 mm, the substrate W having the thin seed layer is plated (hereinafter referred to as condition F) because the condition F is the diameter of the opening 25a. Since the thickness is smaller than the condition E, the film thickness at the central portion of the substrate is increased. In addition, when the diameter W of the opening 25a is 220 mm and the diameter of the opening 60a is 274 mm, the substrate W having a thin seed layer is plated (hereinafter referred to as condition D) because the condition D is the diameter ratio of the opening 60a. Since the condition F is large, the film thickness at the peripheral portion of the substrate is reduced.
如第二十四圖所示,即使是終端效應的影響表現相對顯著的具有薄晶種層的基板W,因為開口25a的徑比具有厚晶種層的基板W的鍍覆處理所適合的開口25a的徑(270mm、條件B、C)變得更小,所以可抑制因終端效應導致的基板W的膜厚的面內均勻性降低(參照條件D、F)。再者,藉由調節調節板60的開口60a的徑,可以調節基板W的周緣部的膜厚,可進一步抑制因終端效應導致的基板W的膜厚的面內均勻性降低(參 照條件D)。 As shown in the twenty-fourth embodiment, even the substrate W having a thin seed layer is relatively remarkable in the effect of the terminal effect, because the opening of the opening 25a is larger than the opening suitable for the plating treatment of the substrate W having the thick seed layer. Since the diameter of 25a (270 mm, conditions B and C) is smaller, it is possible to suppress the in-plane uniformity of the film thickness of the substrate W due to the terminal effect (see conditions D and F). Further, by adjusting the diameter of the opening 60a of the regulating plate 60, the film thickness of the peripheral portion of the substrate W can be adjusted, and the in-plane uniformity of the film thickness of the substrate W due to the end effect can be further suppressed. According to condition D).
第二十五圖表示以具有相對高電阻的鍍覆液(A型)所鍍覆的基板W與以具有相對低電阻的鍍覆液(B型)所鍍覆的基板W的鍍覆膜的輪廓圖。又,以具有相對高電阻的鍍覆液所鍍覆的基板W與以具有相對低電阻的鍍覆液所鍍覆的基板W,抗蝕開口率皆為10%,晶種層的厚度為50nm~100nm。 The twenty-fifth diagram shows a plated film of a substrate W plated with a plating solution having a relatively high resistance (type A) and a substrate W plated with a plating solution having a relatively low resistance (type B). Outline map. Further, the substrate W plated with the plating liquid having a relatively high electric resistance and the substrate W plated with the plating liquid having a relatively low electric resistance have a resist opening ratio of 10%, and the thickness of the seed layer is 50 nm. ~100nm.
如圖所示,在以開口25a的徑做為230mm,以開口60a的徑做為276mm來鍍覆處理以具有相對高電阻的鍍覆液所鍍覆的基板W的情況(以下稱條件A),基板中央部的膜厚變厚,基板周緣部的膜厚變薄。對此,在以開口25a的徑做為260mm,以開口60a的徑做為276mm來鍍覆處理以具有相對高電阻的鍍覆液所鍍覆的基板W的情況(以下稱條件C),因為條件C是開口25a的徑比條件A大,所以基板中央部的膜厚變薄。又,在以開口25a的徑做為260mm,以開口60a的徑做為272mm來鍍覆處理以具有相對高電阻的鍍覆液所鍍覆的基板W的情況(以下稱條件B),因為條件B是開口60a的徑比條件C小,所以基板周緣部的膜厚變薄。 As shown in the figure, in the case where the diameter of the opening 25a is 230 mm and the diameter of the opening 60a is 276 mm, the substrate W coated with the plating liquid having a relatively high electric resistance is plated (hereinafter referred to as condition A). The film thickness at the central portion of the substrate is increased, and the film thickness at the peripheral portion of the substrate is reduced. On the other hand, in the case where the diameter of the opening 25a is 260 mm and the diameter of the opening 60a is 276 mm, the substrate W coated with the plating liquid having a relatively high electric resistance is plated (hereinafter referred to as condition C) because In the condition C, the diameter of the opening 25a is larger than the condition A, and therefore the film thickness at the central portion of the substrate is reduced. In addition, in the case where the diameter of the opening 25a is 260 mm and the diameter of the opening 60a is 272 mm, the substrate W coated with the plating liquid having a relatively high electric resistance (hereinafter referred to as condition B) is plated. B is that the diameter of the opening 60a is smaller than the condition C, so the film thickness at the peripheral portion of the substrate is reduced.
在以開口25a的徑做為270mm,以開口60a的徑做為276mm來鍍覆處理以具有相對低電阻的鍍覆液所鍍覆的基板W的情況(以下稱條件E),基板中央部的膜厚變薄,基板周緣部的膜厚變厚。這意味著因終端效應的影響,基板周緣部的膜厚變厚。對此,在以開口25a的徑做為220mm,以開口60a的徑做為276mm來鍍覆處理以具有相對低電阻的鍍覆液所鍍覆的基板W的情況(以下稱條件F),因為條件F是開口25a的徑比條件E小,所以基板中央部的膜厚變厚。又,在以開口25a的徑做為220mm,以開口60a的徑做為274mm來鍍覆處理以具有相對低電阻的鍍覆液所鍍覆的基板W的情況(以下稱條件D),因為條件D是開口60a的徑比條件F小,所以基板周緣部的膜厚變薄。 In the case where the diameter of the opening 25a is 270 mm and the diameter of the opening 60a is 276 mm, the substrate W coated with the plating liquid having a relatively low resistance (hereinafter referred to as condition E) is plated, and the center portion of the substrate is used. The film thickness is reduced, and the film thickness at the peripheral portion of the substrate is increased. This means that the film thickness at the peripheral portion of the substrate becomes thick due to the influence of the terminal effect. On the other hand, in the case where the diameter of the opening 25a is 220 mm and the diameter of the opening 60a is 276 mm, the substrate W coated with the plating liquid having a relatively low resistance is plated (hereinafter referred to as condition F) because The condition F is that the diameter of the opening 25a is smaller than the condition E, and therefore the film thickness at the central portion of the substrate is increased. In addition, in the case where the diameter of the opening 25a is 220 mm and the diameter of the opening 60a is 274 mm, the substrate W coated with the plating liquid having a relatively low resistance (hereinafter referred to as condition D) is plated. D is that the diameter of the opening 60a is smaller than the condition F, so that the film thickness of the peripheral portion of the substrate is reduced.
如第二十五圖所示,即使是以具有相對低電阻的鍍覆液所鍍覆的基板W的被鍍覆,因為開口25a的徑比以具有相對高電阻的鍍覆液所鍍覆的基板W的鍍覆處理所適合的開口25a的徑(260mm、條件B、C)變得更小,所以可抑制因終端效應導致的基板W的膜厚的面內均勻性降低 (參照條件D、F)。再者,藉由調節調節板60的開口60a的徑,可以調節基板W的周緣部的膜厚,可進一步抑制因終端效應導致的基板W的膜厚的面內均勻性降低(參照條件D)。 As shown in the twenty-fifth figure, even if the substrate W is plated with a plating liquid having a relatively low resistance, the diameter of the opening 25a is plated with a plating liquid having a relatively high electric resistance. The diameter (260 mm, conditions B, C) of the opening 25a suitable for the plating treatment of the substrate W is made smaller, so that the in-plane uniformity of the film thickness of the substrate W due to the end effect can be suppressed from being lowered. (Refer to conditions D and F). Further, by adjusting the diameter of the opening 60a of the adjustment plate 60, the film thickness of the peripheral portion of the substrate W can be adjusted, and the in-plane uniformity of the film thickness of the substrate W due to the end effect can be further suppressed (refer to Condition D). .
如第二十三~二十五圖所示,為了在終端效應的影響不同的各條件下進行均勻性佳的鍍覆,陽極罩25的開口25a的徑的變化幅度,比調節板60的開口60a的徑的變化程度大為較佳。為了可以大的變化幅度調整陽極罩25的開口25a的徑,用如前述的光圈葉片27的機構為較佳。由於陽極罩25與基板W分離,所以即使將陽極罩25的開口25a變小,電通量在陽極罩25與基板W之間散佈,可以調整遍及基板W的大範圍的鍍覆膜的膜厚分布。 As shown in the twenty-third to twenty-fifth diagrams, in order to perform uniform plating under various conditions in which the effects of the terminal effect are different, the variation of the diameter of the opening 25a of the anode cover 25 is larger than the opening of the regulating plate 60. The degree of change in the diameter of 60a is much better. In order to adjust the diameter of the opening 25a of the anode cover 25 with a large degree of change, a mechanism such as the aforementioned diaphragm blade 27 is preferable. Since the anode cover 25 is separated from the substrate W, even if the opening 25a of the anode cover 25 is made small, the electric flux is spread between the anode cover 25 and the substrate W, and the film thickness distribution of the plating film over a wide range of the substrate W can be adjusted. .
基板W的周緣部即使除去終端效應的影響,因為在陽極罩25與基板W之間擴散到外側的電通量集中在基板W的周緣部,所以鍍覆膜容易變厚。像這樣的基板W的的周緣部的相對狹窄範圍區域的鍍覆膜厚調整是藉由調節板60的開口調節部63來達成。因為調節板60靠近基板W,所以可直接遮蔽基板W的周緣部的電場,即使開口徑有相對小變化,也可以調整基板W的周緣部的鍍覆膜厚。 Even if the influence of the end effect is removed in the peripheral portion of the substrate W, the electric flux diffused to the outside between the anode cover 25 and the substrate W is concentrated on the peripheral portion of the substrate W, so that the plating film tends to be thick. The plating film thickness adjustment in the relatively narrow region of the peripheral portion of the substrate W as described above is achieved by the opening adjustment portion 63 of the adjustment plate 60. Since the adjustment plate 60 is close to the substrate W, the electric field of the peripheral portion of the substrate W can be directly shielded, and the plating film thickness of the peripheral portion of the substrate W can be adjusted even if the opening diameter is relatively small.
以上,說明關於本發明的實施形態,上述發明的實施形態,是使本發明的理解變容易者,並非限定本發明。本發明在不脫離其要旨下可變更、改良,當然,本發明也包含其均等物。又,在可解決上述課題的至少一部份的範圍內,或達成至少一部份效果的範圍內,可以進行申請專利範圍及說明書所記載的各構成要素的任意組合或省略。例如,在以上的實施形態,做為調節陽極罩25的開口25a的徑的機構,使用複數個光圈葉片27,做為調節調節板60的開口60a的徑的機構,使用複數個第一板71A及複數個第二板71B。但是,也可以使用複數個第一板71A及複數個第二板71B來調節陽極罩25的開口25a的徑。又,不限於複數個光圈葉片27、複數個第一板71A及複數個第二板71B,可以採用其他形態的調節機構。 The embodiments of the present invention have been described above, and the embodiments of the invention described above are intended to facilitate the understanding of the invention and are not intended to limit the invention. The present invention can be modified and improved without departing from the spirit thereof. Of course, the present invention also includes equivalents thereof. Further, any combination or omission of each constituent element described in the patent application scope and the specification can be made within the scope of at least a part of the above-mentioned problems, or at least a part of the effect. For example, in the above embodiment, a plurality of aperture blades 27 are used as a mechanism for adjusting the diameter of the opening 25a of the anode cover 25, and a plurality of first plates 71A are used as a mechanism for adjusting the diameter of the opening 60a of the adjustment plate 60. And a plurality of second plates 71B. However, the plurality of first plates 71A and the plurality of second plates 71B may be used to adjust the diameter of the opening 25a of the anode cover 25. Further, it is not limited to a plurality of aperture blades 27, a plurality of first plates 71A, and a plurality of second plates 71B, and other types of adjustment mechanisms may be employed.
60‧‧‧調節板 60‧‧‧Adjustment board
60a‧‧‧開口 60a‧‧‧ openings
61‧‧‧板本體部 61‧‧‧ board body
62‧‧‧吊下部 62‧‧‧ hanging lower part
63‧‧‧開口調節部 63‧‧‧ Opening adjustment department
70‧‧‧板體 70‧‧‧ board
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| Application Number | Priority Date | Filing Date | Title |
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| JP2015248380A JP6538541B2 (en) | 2015-12-21 | 2015-12-21 | Regulation plate, plating apparatus provided with the same, and plating method |
| JP2015-248380 | 2015-12-21 |
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| TW201732092A true TW201732092A (en) | 2017-09-16 |
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| TW105140222A TWI687556B (en) | 2015-12-21 | 2016-12-06 | Adjustment plate and plating device and plating method provided with the adjustment plate |
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| US (1) | US20200270760A1 (en) |
| JP (1) | JP6538541B2 (en) |
| KR (1) | KR102354727B1 (en) |
| CN (1) | CN108474132B (en) |
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| TWI846975B (en) * | 2019-10-30 | 2024-07-01 | 日商荏原製作所股份有限公司 | Anode assembly |
| TWI914216B (en) | 2022-07-06 | 2026-02-01 | 日商荏原製作所股份有限公司 | Coating apparatus |
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| JP7014553B2 (en) | 2017-09-22 | 2022-02-01 | 株式会社荏原製作所 | Plating equipment |
| JP6993288B2 (en) * | 2018-05-07 | 2022-01-13 | 株式会社荏原製作所 | Plating equipment |
| KR102435967B1 (en) * | 2018-09-05 | 2022-08-24 | 큐빅 센서 앤드 인스트루먼트 컴퍼니 리미티드 | Method and apparatus for simultaneously measuring mass concentrations of particulate matter of different particle sizes |
| JP7193418B2 (en) * | 2019-06-13 | 2022-12-20 | 株式会社荏原製作所 | Plating equipment |
| JP7227875B2 (en) * | 2019-08-22 | 2023-02-22 | 株式会社荏原製作所 | Substrate holder and plating equipment |
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| US12359338B2 (en) * | 2020-11-16 | 2025-07-15 | Ebara Corporation | Plate, apparatus for plating, and method of manufacturing plate |
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| US20240254648A1 (en) * | 2022-02-16 | 2024-08-01 | Ebara Corporation | Plating apparatus and plating method |
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| JP4711805B2 (en) * | 2005-11-08 | 2011-06-29 | 上村工業株式会社 | Plating tank |
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- 2016-12-05 WO PCT/JP2016/086021 patent/WO2017110432A1/en not_active Ceased
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI846975B (en) * | 2019-10-30 | 2024-07-01 | 日商荏原製作所股份有限公司 | Anode assembly |
| TWI914216B (en) | 2022-07-06 | 2026-02-01 | 日商荏原製作所股份有限公司 | Coating apparatus |
Also Published As
| Publication number | Publication date |
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| US20200270760A1 (en) | 2020-08-27 |
| TWI687556B (en) | 2020-03-11 |
| CN108474132B (en) | 2020-09-18 |
| JP6538541B2 (en) | 2019-07-03 |
| WO2017110432A1 (en) | 2017-06-29 |
| CN108474132A (en) | 2018-08-31 |
| JP2017115171A (en) | 2017-06-29 |
| KR20180090797A (en) | 2018-08-13 |
| KR102354727B1 (en) | 2022-01-25 |
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