TW201731129A - Light-emitting device - Google Patents
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- TW201731129A TW201731129A TW106105686A TW106105686A TW201731129A TW 201731129 A TW201731129 A TW 201731129A TW 106105686 A TW106105686 A TW 106105686A TW 106105686 A TW106105686 A TW 106105686A TW 201731129 A TW201731129 A TW 201731129A
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Abstract
Description
本發明係揭露一種發光裝置,尤關於一種具有環繞透明封裝結構的反射結構的發光裝置。The present invention discloses a light emitting device, and more particularly to a light emitting device having a reflective structure surrounding a transparent package structure.
發光二極體(Light-Emitting Diode;LED)具有耗能低、壽命長、體積小、及反應速度快等特性,逐漸取代傳統之照明光源而被應用於各式照明裝置中。Light-Emitting Diode (LED) has the characteristics of low energy consumption, long life, small volume, and fast response speed, and is gradually being used in various lighting devices instead of the conventional illumination source.
在各式發光二極體的照明應用中,多以螢光粉與發光二極體搭配以發出各種色光,但是螢光粉與發光二極體的組合後的發光效率往往不如預期。因此,如何提升在照明裝置中使用螢光粉時的效率成為重要的課題。In the illumination applications of various types of light-emitting diodes, fluorescent powders are often used in combination with light-emitting diodes to emit various color lights, but the combination of phosphor powder and light-emitting diodes tends to be less efficient than expected. Therefore, how to improve the efficiency when using phosphor powder in a lighting device becomes an important issue.
本發明之一實施例揭露一種發光裝置,其包含一發光主體、一透明封裝結構、一反射結構與一光學轉換結構。發光主體包含一出光面、一相對於出光面之底面、一側表面,一第一電極、以及一第二電極,其中第一電極與第二電極位於底面上。透明封裝結構覆蓋該出光面,以及該側表面。反射結構具有一環繞透明封裝結構的第一反射結構、以及與第一反射結構直接接觸之第二反射結構。光學轉換結構形成於反射結構與透明封裝結構之上。An embodiment of the invention discloses a light emitting device comprising a light emitting body, a transparent package structure, a reflective structure and an optical conversion structure. The illuminating body comprises a light emitting surface, a bottom surface opposite to the light emitting surface, a side surface, a first electrode, and a second electrode, wherein the first electrode and the second electrode are located on the bottom surface. A transparent package structure covers the light exit surface and the side surface. The reflective structure has a first reflective structure surrounding the transparent package structure and a second reflective structure in direct contact with the first reflective structure. The optical conversion structure is formed on the reflective structure and the transparent package structure.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。The above and other objects, features and advantages of the present invention will become more <RTIgt;
以下配合圖式說明本發明之實施例。圖式或說明書中,相似或相同之元件係使用相同之標號標示。Embodiments of the invention are described below in conjunction with the drawings. In the drawings or the description, similar or identical elements are designated by the same reference numerals.
第1A圖顯示本發明一實施例中發光元件100之剖面示意圖。第1B圖顯示本發明一實施例中發光元件100之下視圖。發光元件100包含一發光主體1、一第一反射結構2、一第二反射結構3、一透明封裝結構6、以及一光學轉換結構5。發光主體1具有一出光面12、兩個導電電極4位於發光主體1相對於出光面12的下表面、以及數個側表面11。其中,導電電極4包含較靠近出光面之上方部41、以及較遠離出光面12之下方部42,且導電電極4的最外緣不超過發光主體1之最外緣(亦即,導電電極4可能與發光主體1的最外緣齊平或較最外緣內縮)。第一反射結構2環繞發光主體1之側表面11、以及導電電極4之上方部41。第一反射結構2具有一下表面21、一上表面22、一內表面23、以及一外表面24,內表面23及外表面24可以因製程或材料的差異具有相同或相異的反射係數。其中,下表面21具有一寬度W1,上表面22具有一寬度W2,W1>W2。內表面23為一個斜面,不與發光主體1之側表面11平行,且與下表面21間具有一傾斜角θ,θ為一介於0~90之間的銳角。外表面24大致上垂直於下表面21。也就是說,第一反射結構2的剖面具有一上窄下寬的梯型結構。第一反射結構2的上表面22不與發光主體1的出光面12共水平,且上表面22位於出光面12的上方,與出光面12間具有一大於0的高度差L。第二反射結構3位於第一反射結構2之下方,包含第一部分31環繞導電電極4之下方部42、以及第二部分32覆蓋於兩導電電極4之間的區域。其中,第一部份31靠近發光主體1的一端覆蓋導電電極4的下方部42之一外側邊,而上端位於第一反射結構2的下方,並與下表面21直接接觸。第二部分32填補於兩個導電電極4之間的區域,第二部分32的兩端與兩導電電極4的側面直接接觸。因此,未被導電電極4覆蓋到的發光主體1之下表面大多數或全部皆被第二反射結構3覆蓋。參考第1B圖,由發光元件100之下視圖觀之,第二反射結構3圍繞兩個導電電極4。在另一實施例中,第一反射結構2與第二反射結構3是藉由一次步驟形成。第二反射結構3的下表面與兩個導電電極4之下表面43大體上共平面。在另一實施例中,第二反射結構3的第一部份31與/或第二部分32具有一弧狀的下表面(例如,由側視圖觀之),使第二反射結構3之下表面不與兩個導電電極4的下表面43共平面。Fig. 1A is a schematic cross-sectional view showing a light-emitting element 100 in an embodiment of the present invention. Fig. 1B is a view showing the lower side of the light-emitting element 100 in an embodiment of the present invention. The light emitting device 100 includes a light emitting body 1, a first reflective structure 2, a second reflective structure 3, a transparent package structure 6, and an optical conversion structure 5. The light-emitting body 1 has a light-emitting surface 12, and two conductive electrodes 4 are located on a lower surface of the light-emitting body 1 with respect to the light-emitting surface 12, and a plurality of side surfaces 11. The conductive electrode 4 includes an upper portion 41 closer to the light-emitting surface and a lower portion 42 farther from the light-emitting surface 12, and the outermost edge of the conductive electrode 4 does not exceed the outermost edge of the light-emitting body 1 (ie, the conductive electrode 4) It may be flush with the outermost edge of the illuminating body 1 or retracted from the outermost edge). The first reflective structure 2 surrounds the side surface 11 of the light-emitting body 1 and the upper portion 41 of the conductive electrode 4. The first reflective structure 2 has a lower surface 21, an upper surface 22, an inner surface 23, and an outer surface 24. The inner surface 23 and the outer surface 24 may have the same or different reflection coefficients due to process or material differences. The lower surface 21 has a width W1 and the upper surface 22 has a width W2, W1 > W2. The inner surface 23 is a sloped surface which is not parallel to the side surface 11 of the light-emitting body 1 and has an inclination angle θ with the lower surface 21, and θ is an acute angle between 0 and 90. The outer surface 24 is substantially perpendicular to the lower surface 21. That is, the cross section of the first reflective structure 2 has a ladder-shaped structure with a narrow upper and a lower width. The upper surface 22 of the first reflective structure 2 is not horizontal with the light-emitting surface 12 of the light-emitting body 1, and the upper surface 22 is located above the light-emitting surface 12, and has a height difference L greater than 0 between the light-emitting surface 12. The second reflective structure 3 is located below the first reflective structure 2 and includes a first portion 31 surrounding the lower portion 42 of the conductive electrode 4 and a second portion 32 covering the region between the two conductive electrodes 4. The first portion 31 is adjacent to one end of the light-emitting body 1 and covers one outer side of the lower portion 42 of the conductive electrode 4, and the upper end is located below the first reflective structure 2 and is in direct contact with the lower surface 21. The second portion 32 is filled in a region between the two conductive electrodes 4, and both ends of the second portion 32 are in direct contact with the sides of the two conductive electrodes 4. Therefore, most or all of the lower surface of the light-emitting body 1 not covered by the conductive electrode 4 is covered by the second reflective structure 3. Referring to FIG. 1B, the second reflective structure 3 surrounds the two conductive electrodes 4 as viewed from the lower side of the light-emitting element 100. In another embodiment, the first reflective structure 2 and the second reflective structure 3 are formed by one step. The lower surface of the second reflective structure 3 is substantially coplanar with the lower surface 43 of the two conductive electrodes 4. In another embodiment, the first portion 31 and/or the second portion 32 of the second reflective structure 3 has an arcuate lower surface (eg, viewed from a side view) such that the second reflective structure 3 is underneath. The surface is not coplanar with the lower surface 43 of the two conductive electrodes 4.
於一實施例中,發光元件100中的透明封裝結構6包含或不包含波長轉換材料(例如,螢光粉、染料、奈米粒子等),且位於第一反射結構2、第二反射結構3、以及發光主體1之間。透明封裝結構6圍繞發光主體1之側表面11以及位於導電電極4之上方部41,並且完全覆蓋出光面12。光學轉換結構5位於透明封裝結構6之上方,覆蓋第一反射結構2、透明封裝結構6、以及發光主體1。光學轉換結構5的下表面52與透明封裝結構6之上表面61以及第一反射結構的上表面22大體上共平面且互相接合。換句話說,透明材料6位於第一反射結構2、第二反射結構3、以及光學轉換結構5之間,並環繞發光主體1。光學轉換結構5之側表面51、第一反射結構2的外表面24、以及第二反射結構3的外表面33大體上共平面(如第1A圖所示,至少在一剖面圖中共平面)。在另一實施例中,第二反射結構3的外表面33不與第一反射結構2的外表面24共平面,並位於第一反射結構2的下表面21下方。然而,透明封裝結構6的周圍仍被光學轉換結構5、第一反射結構2、以及第二反射結構3完整包覆,不與外界環境直接接觸。整體來說,第一反射結構2與第二反射結構3形成如反射碗杯的結構,可反射發光主體1所發出的光並將其導向透明封裝結構6的上表面61,再經過光學轉換結構5轉換及/或混和成所需的光線,使發光元件100向上出光。當透明封裝結構6中包含波長轉換材料,亦可以轉換發光主體1所發出的光線,且光學轉換結構5與透明封裝結構6的波長轉換材料可以為相同材料。若材料相同時,光學轉換結構5與透明封裝結構6的波長轉換材料可以具有不同的濃度,例如,透明封裝結構6中的波長轉換材料濃度高於光學轉換結構5中的波長轉換材料濃度。透明封裝結構6中的波長轉換材料也可以與光學轉換結構5中的波長轉換材料不同,例如,光學轉換結構5中包含較短放射波長螢光粉(例如黃色/黃綠色螢光粉),透明封裝結構6中包含較長放射波長螢光粉(例如紅色螢光粉)。在另一實施例中,透明封裝結構6的部分會延伸到兩導電電極4之間,例如,第二反射結構3的第二部分32與發光主體1之間。In one embodiment, the transparent package structure 6 in the light-emitting element 100 includes or does not include a wavelength converting material (eg, phosphor powder, dye, nano particles, etc.), and is located in the first reflective structure 2 and the second reflective structure 3 And between the illuminating bodies 1. The transparent package structure 6 surrounds the side surface 11 of the light-emitting body 1 and the upper portion 41 of the conductive electrode 4, and completely covers the light-emitting surface 12. The optical conversion structure 5 is located above the transparent package structure 6 and covers the first reflective structure 2, the transparent package structure 6, and the illuminating body 1. The lower surface 52 of the optical conversion structure 5 is substantially coplanar and interengaged with the upper surface 61 of the transparent package structure 6 and the upper surface 22 of the first reflective structure. In other words, the transparent material 6 is located between the first reflective structure 2, the second reflective structure 3, and the optical conversion structure 5, and surrounds the light-emitting body 1. The side surface 51 of the optical conversion structure 5, the outer surface 24 of the first reflective structure 2, and the outer surface 33 of the second reflective structure 3 are substantially coplanar (as shown in Figure 1A, at least in a cross-sectional view). In another embodiment, the outer surface 33 of the second reflective structure 3 is not coplanar with the outer surface 24 of the first reflective structure 2 and is located below the lower surface 21 of the first reflective structure 2. However, the periphery of the transparent package structure 6 is still completely covered by the optical conversion structure 5, the first reflection structure 2, and the second reflection structure 3, and is not in direct contact with the external environment. Generally, the first reflective structure 2 and the second reflective structure 3 form a structure such as a reflective cup, which can reflect the light emitted by the illuminating body 1 and guide it to the upper surface 61 of the transparent package structure 6, and then pass through the optical conversion structure. 5 converting and/or mixing into the desired light to cause the light-emitting element 100 to illuminate upward. When the wavelength conversion material is included in the transparent package structure 6, the light emitted by the light-emitting body 1 can also be converted, and the wavelength conversion material of the optical conversion structure 5 and the transparent package structure 6 can be the same material. If the materials are the same, the wavelength conversion material of the optical conversion structure 5 and the transparent package structure 6 may have different concentrations, for example, the wavelength conversion material concentration in the transparent package structure 6 is higher than the wavelength conversion material concentration in the optical conversion structure 5. The wavelength conversion material in the transparent package structure 6 may also be different from the wavelength conversion material in the optical conversion structure 5. For example, the optical conversion structure 5 includes a shorter radiation wavelength phosphor (for example, yellow/yellow green phosphor), and is transparent. The package structure 6 contains a longer radiation wavelength phosphor (for example, red phosphor). In another embodiment, a portion of the transparent package structure 6 extends between the two conductive electrodes 4, for example, between the second portion 32 of the second reflective structure 3 and the illuminating body 1.
參考第1A圖,於一實施例中,發光元件100具有一總高度 T。T不大於650μm。於另一實施例中T不大於570μm。發光主體1具有一高度H1(導電電極4的下表面43至出光面12間的距離),第一反射結構2以及第二反射結構3整體具有一高度H2,光學轉換結構5具有一高度H3,光學轉換結構5的下表面52與發光主體1的出光面12有一大於0的距離L。在一實施例中,0<L≦200μm。其中,H2>H1,且H2大約為H1的1.2~2.5倍。在一實施例中,H2/H1=1.2、1.55、或2。T大約為H3的1.2~4.7倍。於一實施例中T大約為H3的1.6~4.5倍,例如1.7、2.1、4.3倍。發光主體1的出光面12具有一寬度W3,透明封裝結構6的上表面61具有一寬度W4,光學轉換結構5具有一寬度W5,W5>W4>W3。換句話說,光學轉換結構5完全覆蓋透明封裝結構6以及發光主體1,透明封裝結構6完全覆蓋發光主體1。其中,W5大約為W3的1.2~3倍。於一實施例中,W5大約為W3的1.3~2.6倍、1.4、2、2.1、 或2.4倍。W5大約為W4的1~1.4倍。於一實施例中,W5/W4=1.25、1.27、或1.31。第一反射結構2的內表面23與發光主體1的側表面11具有一大於0的距離D,例如是50μm≦D≦300μm,其中W3為D的2~11倍。在一實施例中,W3/D=2.24、3.13、3.4、 6.6、7.62、7.8、9 、10.2、或13.2等。當尺寸位於以上數值區間中,發光元件100通常可具有較佳的光學特性,例如發光效率、光場與色溫。Referring to Figure 1A, in one embodiment, light-emitting element 100 has a total height T. T is not more than 650 μm. In another embodiment T is no greater than 570 μm. The light-emitting body 1 has a height H1 (the distance between the lower surface 43 of the conductive electrode 4 and the light-emitting surface 12), the first reflective structure 2 and the second reflective structure 3 have a height H2 as a whole, and the optical conversion structure 5 has a height H3. The lower surface 52 of the optical conversion structure 5 has a distance L greater than zero from the light exit surface 12 of the light-emitting body 1. In one embodiment, 0 < L ≦ 200 μm. Among them, H2>H1, and H2 is about 1.2 to 2.5 times that of H1. In an embodiment, H2/H1 = 1.2, 1.55, or 2. T is about 1.2 to 4.7 times that of H3. In one embodiment, T is about 1.6 to 4.5 times H3, such as 1.7, 2.1, and 4.3 times. The light-emitting surface 12 of the light-emitting body 1 has a width W3, the upper surface 61 of the transparent package structure 6 has a width W4, and the optical conversion structure 5 has a width W5, W5>W4>W3. In other words, the optical conversion structure 5 completely covers the transparent package structure 6 and the light-emitting body 1, and the transparent package structure 6 completely covers the light-emitting body 1. Among them, W5 is about 1.2 to 3 times that of W3. In one embodiment, W5 is approximately 1.3 to 2.6 times, 1.4, 2, 2.1, or 2.4 times W3. W5 is about 1 to 1.4 times that of W4. In one embodiment, W5/W4 = 1.25, 1.27, or 1.31. The inner surface 23 of the first reflective structure 2 and the side surface 11 of the illuminating body 1 have a distance D greater than 0, for example 50 μm ≦D ≦ 300 μm, wherein W3 is 2 to 11 times D. In one embodiment, W3/D = 2.24, 3.13, 3.4, 6.6, 7.62, 7.8, 9, 10.2, or 13.2, and the like. When the size is in the above numerical range, the light-emitting element 100 can generally have better optical characteristics such as luminous efficiency, light field and color temperature.
於一實施例中,發光主體1為一可發出非同調性光的半導體發光元件,包含一載具、一第一型半導體層、一活性層、以及一第二型半導體層。第一型半導體層及第二型半導體層例如為包覆層(cladding layer)或限制層(confinement layer),可分別提供電子、電洞,使電子、電洞於活性層中結合以發光。第一型半導體層、活性層、及第二型半導體層可包含Ⅲ-Ⅴ族半導體材料,例如Alx Iny Ga( 1-x-y ) N或Alx Iny Ga( 1-x-y ) P,其中0≦x、 y≦1;(x+y)≦1。依據活性層之材料,發光主體1可發出一峰值介於610 nm及650 nm之間的紅光,峰值介於530 nm及570 nm之間的綠光,峰值介於450 nm及490 nm之間的藍光,或是峰值介於405nm及450nm之間的近紫外光,或是峰值介於280nm及400nm之間的紫外光。載具可做為第一型半導體層、一活性層、以及一第二型半導體層的成長基板,或是移除成長基板後做為第一型半導體層、一活性層、以及一第二型半導體層的載體。基板的材料包含但不限於鍺(Ge)、砷化鎵(GaAs)、銦化磷(InP)、藍寶石(Sapphire)、碳化矽(SiC)、矽(Si)、鋁酸鋰(LiAlO2 )、氧化鋅(ZnO)、氮化鎵(GaN)、氮化鋁(AlN)、金屬、玻璃、複合材料(Composite)、鑽石、CVD鑽石、與類鑽碳(Diamond-Like Carbon;DLC)等。In one embodiment, the illuminating body 1 is a semiconductor illuminating element capable of emitting non-coherent light, and includes a carrier, a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layer and the second type semiconductor layer are, for example, a cladding layer or a confinement layer, and respectively provide electrons and holes to combine electrons and holes in the active layer to emit light. The first type semiconductor layer, the active layer, and the second type semiconductor layer may comprise a III-V semiconductor material such as Al x In y Ga ( 1-xy ) N or Al x In y Ga ( 1-xy ) P, wherein 0≦x, y≦1; (x+y)≦1. According to the material of the active layer, the illuminating body 1 emits a red light with a peak between 610 nm and 650 nm, a green light with a peak between 530 nm and 570 nm, and a peak between 450 nm and 490 nm. The blue light, or near-ultraviolet light with a peak between 405 nm and 450 nm, or ultraviolet light with a peak between 280 nm and 400 nm. The carrier can be used as a growth substrate of a first type semiconductor layer, an active layer, and a second type semiconductor layer, or as a first type semiconductor layer, an active layer, and a second type after removing the grown substrate. A carrier of a semiconductor layer. The material of the substrate includes, but is not limited to, germanium (Ge), gallium arsenide (GaAs), indium phosphate (InP), sapphire (Sapphire), tantalum carbide (SiC), germanium (Si), lithium aluminate (LiAlO 2 ), Zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), metal, glass, composite, diamond, CVD diamond, and diamond-like carbon (DLC).
於一實施例中,導電電極4材料可以是金屬,例如金(Au)、銀(Ag)、銅(Cu)、鉻(Cr)、鋁(Al)、鉑(Pt)、鎳(Ni)、鈦(Ti)、錫(Sn)、或其合金、或其疊層組合。透明封裝結構6包含矽膠(Silicone)、環氧樹脂(Epoxy)、聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、SU8、丙烯酸樹脂(Acrylic Resin)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、聚醚醯亞胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、氧化鋁(Al2 O3 )、SINR、旋塗玻璃(SOG)。In one embodiment, the material of the conductive electrode 4 may be a metal such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), Titanium (Ti), tin (Sn), or an alloy thereof, or a combination thereof. The transparent package structure 6 comprises Silicone, Epoxy, Polyimine (PI), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), SU8, Acrylic Resin ), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide (Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer), oxidation Aluminum (Al 2 O 3 ), SINR, spin-on glass (SOG).
於一實施例中,光學轉換結構5包含一基體與波長轉換材料,並且光學轉換結構5包含與透明封裝結構6相同或相異的波長轉換材料,而波長轉換材料可以包含分散於一基體中的複數個螢光粉材料。選擇性地,光學轉換結構5更可包含擴散粒子。基體包含環氧樹脂(Epoxy)、矽膠(Silicone)、聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、Su8、丙烯酸樹脂(Acrylic Resin)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、或聚醚醯亞胺(Polyetherimide)。螢光粉材料包含但不限於黃綠色螢光粉及紅色螢光粉。黃綠色螢光粉之成分係例如鋁氧化物(例如釔鋁石榴石(YAG)或是鋱鋁石榴石(TAG))、矽酸鹽、釩酸鹽、鹼土金屬硒化物、或金屬氮化物。紅色螢光粉之成分係例如矽酸鹽、釩酸鹽、鹼土金屬硫化物、金屬氮氧化物、或鎢鉬酸鹽族混合物。擴散粒子的成分包含但不限於二氧化鈦、氧化鋯、氧化鋅或氧化鋁。In one embodiment, the optical conversion structure 5 comprises a substrate and a wavelength converting material, and the optical conversion structure 5 comprises the same or different wavelength converting material as the transparent packaging structure 6, and the wavelength converting material may comprise a dispersion in a matrix. A plurality of phosphor materials. Alternatively, the optical conversion structure 5 may further comprise diffusion particles. The matrix comprises epoxy resin (Epoxy), silicone (Silicone), polyamidamine (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), Su8, acrylic resin (Acrylic Resin), poly Methyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), or polyetherimide. Fluorescent powder materials include, but are not limited to, yellow-green phosphor powder and red phosphor powder. The composition of the yellow-green phosphor is, for example, an aluminum oxide (for example, yttrium aluminum garnet (YAG) or yttrium aluminum garnet (TAG)), silicate, vanadate, alkaline earth metal selenide, or metal nitride. The components of the red phosphor are, for example, citrate, vanadate, alkaline earth metal sulfide, metal oxynitride, or a mixture of tungsten molybdate salts. The components of the diffusing particles include, but are not limited to, titanium dioxide, zirconium oxide, zinc oxide or aluminum oxide.
於一實施例中,第一反射結構2以及第二反射結構3的材料包含一基質及高反射率物質之混和物。基質可為矽膠基質(silicone-based)或環氧基質(epoxy-based);高反射率物質可包含二氧化鈦、二氧化矽或氧化鋁。In one embodiment, the materials of the first reflective structure 2 and the second reflective structure 3 comprise a mixture of a matrix and a high reflectivity material. The substrate can be a silicone-based or epoxy-based; the high reflectivity material can comprise titanium dioxide, ceria or alumina.
第1C圖為依據本發明另一實施例之一發光元件之剖面示意圖。發光元件100'的技術特徵可以操考前述關於發光元件100的描述,唯第一反射結構2的內表面23'靠近光學轉換結構5具有一弧面。與前述實施例相同的符號、記號表示類似、或是相同的元件或裝置,在此不再贅述。1C is a schematic cross-sectional view showing a light-emitting element according to another embodiment of the present invention. The technical feature of the light-emitting element 100' can be described in the foregoing description about the light-emitting element 100, except that the inner surface 23' of the first reflective structure 2 has a curved surface close to the optical conversion structure 5. The same symbols and symbols as those in the foregoing embodiments denote similar or identical elements or devices, and are not described herein again.
第2A~2G圖為依據本發明一實施例之發光元件之製作流程示意圖。參照第2A圖,首先提供一具有黏著性的第一暫時載具7,將複數個發光主體1的兩個導電電極4安置於第一暫時載具7上,導電電極4的下方部42埋進第一暫時載具7。相鄰發光主體1間之區域定義為走道區,其中發光主體1放置於第一暫時載具7之精準度主要係取決於挑選放置系統(Pick & Place system)的精準度,一般而言挑選放置系統的誤差不會超過±15μm。接著,形成透明封裝結構6以填滿發光主體1間之走道區,並且覆蓋發光主體1之出光面12及未被發光主體1覆蓋之第一暫時載具7的上表面。透明封裝結構6可以利用鋼板印刷、塗佈、刷塗、旋塗、噴墨印刷、點膠、鑄模灌膠等方式形成。其中,第一暫時載具7之材料包含但不限於熱解離膠。如第2B圖所示,提供一具有黏著性的第二暫時載具8黏著於透明封裝結構6之上表面61上。之後,移除第一暫時載具7,裸露出導電電極4的下方部42以及下表面43、和透明封裝結構6的下表面63。移除方法可以使用雷射剝離、加熱分離、溶解等方式。需特別注意的是,此時透明封裝結構6的下表面63與導電電極4的下表面43沒有共平面。具體而言,導電電極4的下方部42是突出於透明封裝結構6之外。其中,第二暫時載具8之材料可為熱移除膠帶(thermal release tape)、光解膠膜(UV tape)、化學移除膠帶(Chemical release tape)、耐熱膠帶或藍膜。2A to 2G are schematic views showing a manufacturing process of a light-emitting element according to an embodiment of the present invention. Referring to FIG. 2A, a first temporary carrier 7 having adhesiveness is first provided, and two conductive electrodes 4 of the plurality of light-emitting bodies 1 are disposed on the first temporary carrier 7, and the lower portion 42 of the conductive electrode 4 is buried. The first temporary carrier 7. The area between adjacent illuminating bodies 1 is defined as a walkway area, wherein the accuracy of the illuminating body 1 placed on the first temporary carrier 7 depends mainly on the accuracy of the Pick & Place system, and is generally selected and placed. The system error will not exceed ±15μm. Next, a transparent package structure 6 is formed to fill the aisle region between the light-emitting bodies 1 and cover the light-emitting surface 12 of the light-emitting body 1 and the upper surface of the first temporary carrier 7 not covered by the light-emitting body 1. The transparent package structure 6 can be formed by using steel plate printing, coating, brushing, spin coating, inkjet printing, dispensing, mold filling, and the like. The material of the first temporary carrier 7 includes, but is not limited to, a thermal dissociation glue. As shown in FIG. 2B, a second temporary carrier 8 having adhesiveness is adhered to the upper surface 61 of the transparent package structure 6. Thereafter, the first temporary carrier 7 is removed, the lower portion 42 and the lower surface 43 of the conductive electrode 4, and the lower surface 63 of the transparent package structure 6 are exposed. The removal method can be performed by laser peeling, heating separation, dissolution, and the like. It is important to note that the lower surface 63 of the transparent package structure 6 is not coplanar with the lower surface 43 of the conductive electrode 4. Specifically, the lower portion 42 of the conductive electrode 4 protrudes beyond the transparent package structure 6. The material of the second temporary carrier 8 may be a thermal release tape, a UV tape, a chemical release tape, a heat resistant tape or a blue film.
如第2C圖所示,翻轉第2B圖中的結構。使用刀具切割透明封裝結構6以形成上寬下窄的切割道62。切割道62內遠離第二暫時載具8的寬度大於靠近第二暫時載具8的寬度。換句話說,切割道62使透明封裝結構6形成一上窄下寬近似梯形的結構。透明封裝結構6之較窄的底邊與發光主體1的導電電極4的側邊直接接觸。需特別注意的是,刀具可能會在第二暫時載具8上產生割痕,但並不會使第二暫時載具8實質上分離。換言之,第二暫時載具8上仍然附著各個被透明封裝結構6包覆之發光主體1。接著,如第2D圖所示,形成一反射結構2' 於切割道62內,並覆蓋發光主體1之導電電極4和透明封裝結構6的下表面63、以及兩個導電電極4之間的空隙。反射結構2' 可以利用鋼板印刷、塗佈、刷塗、旋塗、噴墨印刷、點膠、濺鍍(sputtering)、或鑄模灌膠等方式形成。隨後,如第2E圖所示,進行一拋光製程(polish process),裸露出導電電極4的下表面43,並使反射結構2' 與導電電極4的下表面43大體上共平面。在一實施例中,反射結構2' 包含類似1A圖所示之第一反射結構2以及第二反射結構3As shown in Fig. 2C, the structure in Fig. 2B is flipped. The transparent package structure 6 is cut using a cutter to form an upper width and a lower narrow cut path 62. The width of the cutting track 62 away from the second temporary carrier 8 is greater than the width of the second temporary carrier 8. In other words, the dicing street 62 causes the transparent package structure 6 to form a structure having an upper narrow width and a substantially trapezoidal shape. The narrower bottom edge of the transparent package structure 6 is in direct contact with the side edges of the conductive electrodes 4 of the light-emitting body 1. It is important to note that the cutter may create cuts on the second temporary carrier 8, but does not substantially separate the second temporary carrier 8. In other words, the respective light-emitting bodies 1 covered by the transparent package structure 6 are still attached to the second temporary carrier 8. Next, as shown in FIG. 2D, a reflective structure 2' is formed in the dicing street 62, and covers the conductive electrode 4 of the illuminating body 1 and the lower surface 63 of the transparent package structure 6, and the gap between the two conductive electrodes 4. . The reflective structure 2' can be formed by pattern printing, coating, brushing, spin coating, inkjet printing, dispensing, sputtering, or mold potting. Subsequently, as shown in Fig. 2E, a polish process is performed to expose the lower surface 43 of the conductive electrode 4, and the reflective structure 2' is substantially coplanar with the lower surface 43 of the conductive electrode 4. In an embodiment, the reflective structure 2' comprises a first reflective structure 2 and a second reflective structure 3 similar to those shown in FIG.
接著,如第2F圖所示,翻轉第2E圖中的結構,使用雷射剝離、加熱分離、溶解、照射紫外光等方式移除第二暫時載具8。在此,也可進行一平坦化製程,例如拋光製程(polish process),使透明封裝結構6之上表面61平坦化,並且藉此步驟可以清除透明封裝結構6上之第二暫時載具8的殘留物。其後,利用鋼板印刷、塗佈、刷塗、旋塗、噴墨印刷、點膠、壓合或鑄模灌膠等方式形成光學轉換結構5於透明封裝結構6的上表面61之上方。在此,也可進行一拋光製程(polish process),使光學轉換結構5之上表面平坦化。最後,如第2G圖所示,在切割道62間進行切割以分離發光元件。在第2G圖的步驟中,可選擇性的先翻轉第2F圖中的結構(亦即,使光學轉換結構5朝下),再進行切割。在另一實施例中,於第2F圖的步驟中,先提供一第三暫時載具(未顯示)黏接於光學轉換結構5相對於第二暫時載具8的另外一面,再移除第二暫時載具8。於第2G圖的步驟中,完成切割製程再移除第三暫時載具。其中,移除第三載具的方法如同移除第二暫時載具8,在此不再贅述。Next, as shown in FIG. 2F, the structure in FIG. 2E is inverted, and the second temporary carrier 8 is removed by laser peeling, heating separation, dissolution, irradiation of ultraviolet light, or the like. Here, a planarization process, such as a polish process, may be performed to planarize the upper surface 61 of the transparent package structure 6, and by this step, the second temporary carrier 8 on the transparent package structure 6 may be removed. the remains. Thereafter, the optical conversion structure 5 is formed over the upper surface 61 of the transparent package structure 6 by means of steel plate printing, coating, brushing, spin coating, ink jet printing, dispensing, pressing or mold potting. Here, a polishing process may also be performed to planarize the upper surface of the optical conversion structure 5. Finally, as shown in Fig. 2G, cutting is performed between the dicing streets 62 to separate the light-emitting elements. In the step of Fig. 2G, the structure in Fig. 2F can be selectively flipped (i.e., the optical conversion structure 5 is directed downward) and then diced. In another embodiment, in the step of FIG. 2F, a third temporary carrier (not shown) is first adhered to the other side of the optical conversion structure 5 relative to the second temporary carrier 8, and then the first Two temporary vehicles 8. In the step of FIG. 2G, the cutting process is completed and the third temporary carrier is removed. The method of removing the third carrier is the same as removing the second temporary carrier 8 , and details are not described herein again.
於第2A圖的步驟中,透明封裝結構6會填補於發光主體1之兩個導電電極4之間。因此,如第2G圖所示,兩個導電電極4的上方部41之間存在透明封裝結構6,並且連接到發光主體1的兩個相鄰導電電極4之間的反射結構2' ,使發光主體1的兩個導電電極4之間存有透明封裝結構6 。於另一實施例中,於第2A圖的步驟中,透明封裝結構6沒有形成於發光主體1之兩個導電電極4之間。因此,於第2G圖的步驟中,發光主體1的下方不存在透明封裝結構6,形成如第1A圖所示之發光元件100。In the step of FIG. 2A, the transparent package structure 6 is filled between the two conductive electrodes 4 of the light-emitting body 1. Therefore, as shown in FIG. 2G, a transparent package structure 6 exists between the upper portions 41 of the two conductive electrodes 4, and is connected to the reflective structure 2' between the two adjacent conductive electrodes 4 of the light-emitting body 1 to cause light emission. A transparent encapsulation structure 6 is present between the two conductive electrodes 4 of the main body 1. In another embodiment, in the step of FIG. 2A, the transparent package structure 6 is not formed between the two conductive electrodes 4 of the light-emitting body 1. Therefore, in the step of FIG. 2G, the transparent package structure 6 is not present under the light-emitting body 1, and the light-emitting element 100 as shown in FIG. 1A is formed.
第3A~3I圖為依據本發明一實施例之發光元件之另一製作流程示意圖。與前述製作流程相同的符號、記號表示類似、或是相同的元件或裝置,可參考前開相對應的描述,於此將不再贅述。第3A~3C圖的步驟同第2A~2C圖的步驟。接著,如第3D圖所示,提供一第四暫時載具7' 於相對於第二暫時載具8的另一面後,再移除第二暫時載具8。第四暫時載具7' 與第一暫時載具7具有相似的材料特性,導電電極4之下方部42埋進第四暫時載具7' 內。隨後,如第3E圖所示,翻轉第3D圖中的結構,利用鋼板印刷、塗佈、刷塗、旋塗、噴墨印刷、點膠、濺鍍(sputtering)、或鑄模灌膠等方式形成第一反射結構2於切割道62之中。在此,也可進行一拋光製程(polish process),使透明封裝結構6之上表面61平坦化,並且可以清除溢流至透明封裝結構6上之第一反射結構2。接著,如第3F圖所示,形成光學轉換結構5於透明封裝結構6的上表面61以及第一反射結構2之上方。如第3G圖所示,翻轉第3F圖中的結構,移除第四暫時載具7’,裸露出導電電極4的下方部42及下表面43、以及透明封裝結構6之下表面63。接著,如第3H圖所示,利用鋼板印刷、塗佈、刷塗、旋塗、噴墨印刷等方式形成第二反射結構3於透明封裝結構6相對於光學轉換結構5的另一面,使第二反射結構3環繞導電電極4的外側表面、覆蓋透明封裝結構6之下表面63以及第一反射結構2的下表面21。其中,第二反射結構3並未覆蓋到導電電極4的下表面43或並未覆蓋全部下表面43。如第3I圖所示,在切割道62間進行切割,形成各自分離的複數個發光元件。於第3H圖的步驟中,可選擇性的先提供另一暫時載具(未顯示)於光學轉換結構5上,再形成第二反射結構3。於第3I圖的步驟,也可以完成切割製程後再移除此暫時載具(未顯示),移除的方法如同移除第二暫時載具8。3A to 3I are schematic views showing another manufacturing process of a light-emitting element according to an embodiment of the present invention. The same symbols and symbols as those in the foregoing manufacturing process are similar or identical elements, and the corresponding descriptions of the front opening are referred to, and will not be described again. The steps in Figures 3A to 3C are the same as those in Figures 2A to 2C. Next, as shown in FIG. 3D, a fourth temporary carrier 7' is provided on the other side of the second temporary carrier 8, and then the second temporary carrier 8 is removed. The fourth temporary carrier 7' has similar material properties as the first temporary carrier 7, and the lower portion 42 of the conductive electrode 4 is buried in the fourth temporary carrier 7'. Subsequently, as shown in FIG. 3E, the structure in the 3D drawing is reversed and formed by pattern printing, coating, brushing, spin coating, inkjet printing, dispensing, sputtering, or mold filling. The first reflective structure 2 is in the scribe line 62. Here, a polish process may also be performed to planarize the upper surface 61 of the transparent package structure 6 and to remove the first reflective structure 2 overflowing onto the transparent package structure 6. Next, as shown in FIG. 3F, the optical conversion structure 5 is formed above the upper surface 61 of the transparent package structure 6 and the first reflective structure 2. As shown in Fig. 3G, the structure in Fig. 3F is reversed, the fourth temporary carrier 7' is removed, the lower portion 42 and the lower surface 43 of the conductive electrode 4, and the lower surface 63 of the transparent package structure 6 are exposed. Next, as shown in FIG. 3H, the second reflective structure 3 is formed on the other surface of the transparent package structure 6 with respect to the optical conversion structure 5 by means of steel plate printing, coating, brushing, spin coating, inkjet printing, or the like. The second reflective structure 3 surrounds the outer surface of the conductive electrode 4, covers the lower surface 63 of the transparent package structure 6, and the lower surface 21 of the first reflective structure 2. Wherein, the second reflective structure 3 does not cover the lower surface 43 of the conductive electrode 4 or does not cover all of the lower surface 43. As shown in Fig. 3I, cutting is performed between the dicing streets 62 to form a plurality of light-emitting elements that are separated from each other. In the step of FIG. 3H, another temporary carrier (not shown) may be selectively provided on the optical conversion structure 5 to form the second reflective structure 3. In the step of FIG. 3I, the temporary carrier (not shown) may also be removed after the cutting process is completed, and the removal is performed as if the second temporary carrier 8 is removed.
於第3A圖的步驟中,透明封裝結構6會填補於發光主體1之相鄰導電電極4之間。因此,如第3H圖所示,相鄰導電電極4的上方部41之間存有透明封裝結構6,使位於導電電極4之間的第二反射結構3之第二部分32與發光主體1之間存有透明封裝結構6。另一實施例中,於第3A圖的步驟中,透明封裝結構6沒有填補於發光主體1之相鄰導電電極4之間。因此,於第3H圖的步驟中,相鄰導電電極4之間只存有第二反射結構3之第二部分32而沒有透明封裝結構6填入,形成如第1圖所示之發光元件100。In the step of FIG. 3A, the transparent package structure 6 is filled between the adjacent conductive electrodes 4 of the light-emitting body 1. Therefore, as shown in FIG. 3H, a transparent package structure 6 exists between the upper portions 41 of the adjacent conductive electrodes 4, so that the second portion 32 of the second reflective structure 3 between the conductive electrodes 4 and the light-emitting body 1 There is a transparent package structure 6. In another embodiment, in the step of FIG. 3A, the transparent package structure 6 is not filled between the adjacent conductive electrodes 4 of the light-emitting body 1. Therefore, in the step of FIG. 3H, only the second portion 32 of the second reflective structure 3 exists between the adjacent conductive electrodes 4 without the transparent package structure 6 being filled, and the light-emitting element 100 as shown in FIG. 1 is formed. .
於第2C圖或第3C圖的步驟中,刀具的刀尖若具有弧形剖面時,透明封裝結構6於靠近第二暫時載具8處即具有一弧型的形狀。隨後形成第一反射結構2時,其內表面23'於靠近光學轉換結構5處即具有一弧型的表面或線條,如第1C圖所示之發光元件100'。In the step of FIG. 2C or FIG. 3C, if the cutting edge of the tool has an arc-shaped cross section, the transparent packaging structure 6 has an arc shape near the second temporary carrier 8. When the first reflective structure 2 is subsequently formed, the inner surface 23' thereof has an arc-shaped surface or line near the optical conversion structure 5, such as the light-emitting element 100' shown in FIG. 1C.
本發明之另一實施例中,發光元件100之光學轉換結構5具有多層結構,如第4圖所示。發光元件200近似發光元件100,其中,光學轉換結構5包含第一光學轉換結構5' 以及第二光學轉換結構5" 。第一光學轉換結構5'包含的螢光粉材料不同於第二光學轉換結構5"。例如,第一光學轉換結構5'包含黃綠色螢光粉之成分,第二光學轉換結構5"包含紅色螢光粉之成分或黃綠色螢光粉以及紅色螢光粉之混合。調整第一光學轉換結構5' 以及第二光學轉換結構5"的成分或密度或厚度比,可以改變發光元件200發出光線的顏色或色溫。In another embodiment of the present invention, the optical conversion structure 5 of the light-emitting element 100 has a multilayer structure as shown in FIG. The light-emitting element 200 approximates the light-emitting element 100, wherein the optical conversion structure 5 comprises a first optical conversion structure 5' and a second optical conversion structure 5". The first optical conversion structure 5' comprises a phosphor material different from the second optical conversion Structure 5". For example, the first optical conversion structure 5' includes a component of yellow-green fluorescent powder, and the second optical conversion structure 5" includes a component of red fluorescent powder or a mixture of yellow-green fluorescent powder and red fluorescent powder. The composition or density or thickness ratio of the conversion structure 5' and the second optical conversion structure 5" may change the color or color temperature of the light emitted by the light-emitting element 200.
本發明之另一實施例中,發光元件300具有一光學元件設置於光學轉換結構5之上方,如第5圖所示。發光元件300具有一光學元件9設置於光學轉換結構5之上方。光學元件9,例如凸透鏡、凹透鏡、菲涅耳透鏡(Fresnel lens),可用於改變來自光學轉換結構5的光之光型,或是增加發光元件300的亮度。光學元件9的下表面與光學轉換結構5的上表面53相接,並完全覆蓋透明封裝結構6、第一反射結構2與發光主體1。在一實施例中,光學元件9具有一弧形的凸起表面。在其他實施例中,可以依照所需要光型,光學元件9的上表面可以具有其他的形狀,例如:弧形凹面、平面、V形凹面、具有尖點的突起表面…等,惟上述形狀並不限制本發明的範圍。光學元件9的材料包含藍寶石(Sapphire)、鑽石(Diamond)、玻璃(Glass)、環氧樹脂(Epoxy)、石英(quartz)、丙烯酸樹脂(Acrylic Resin)、氧化矽(SiOX)、氧化鋁(Al2 O3 )、氧化鋅(ZnO)、或矽膠(Silicone)。In another embodiment of the present invention, the light-emitting element 300 has an optical element disposed above the optical conversion structure 5, as shown in FIG. The light-emitting element 300 has an optical element 9 disposed above the optical conversion structure 5. The optical element 9, such as a convex lens, a concave lens, or a Fresnel lens, can be used to change the light type of light from the optical conversion structure 5 or to increase the brightness of the light-emitting element 300. The lower surface of the optical element 9 is in contact with the upper surface 53 of the optical conversion structure 5 and completely covers the transparent package structure 6, the first reflective structure 2 and the illuminating body 1. In an embodiment, the optical element 9 has an arcuate convex surface. In other embodiments, the upper surface of the optical element 9 may have other shapes depending on the desired light type, such as: a curved concave surface, a flat surface, a V-shaped concave surface, a convex surface having a sharp point, etc., but the above shape The scope of the invention is not limited. The material of the optical element 9 comprises Sapphire, Diamond, Glass, Epoxy, Quartz, Acrylic Resin, Oxide (SiOX), Alumina (Al). 2 O 3 ), zinc oxide (ZnO), or silicone (Silicone).
本發明之另一實施例中,發光元件400之導電電極4下方設置延伸電極,如第6圖所示。發光元件400具有延伸電極10形成於各個導電電極4的下表面43並與導電電極4形成電性連接。延伸電極10沿著第二反射結構3的第一部份31往發光元件400的最外側邊4001延伸。具體而言,延伸電極10覆蓋導電電極4之下表面43以及第二反射結構3之下表面。延伸電極10的寬度或/及面積比導電電極4大,以增加發光元件400後續組裝焊接的便利性及可靠度。在一實施例中,延伸電極10的外側邊101與最外側邊4001大體上共平面。在另一實施例中,延伸電極10的外側邊101不與發光元件400的最外側邊4001共平面,或內縮或外凸。延伸電極10的材料包含金屬,例如:金(Au)、銀(Ag)、銅(Cu)、鉻(Cr)、鋁(Al)、鉑(Pt)、鎳(Ni)、鈦(Ti)、錫(Sn)或其合金或其疊層組合。在另一實施例中(未顯示),發光元件400的第二反射結構3具有弧狀的下表面,此下表面的頂點低於導電電極4的下表面43,因此延伸電極10與導電電極4接觸的部分被第二反射結構3所環繞。若第二反射結構3的第一部分31具有弧形的下表面,覆蓋其上的延伸電極10也會因此形成類似輪廓,而具有弧形的上表面或下表面。In another embodiment of the present invention, an extension electrode is disposed under the conductive electrode 4 of the light-emitting element 400, as shown in FIG. The light emitting element 400 has the extension electrode 10 formed on the lower surface 43 of each of the conductive electrodes 4 and electrically connected to the conductive electrode 4. The extension electrode 10 extends along the first portion 31 of the second reflective structure 3 toward the outermost side 4001 of the light emitting element 400. Specifically, the extension electrode 10 covers the lower surface 43 of the conductive electrode 4 and the lower surface of the second reflective structure 3. The width or/and the area of the extension electrode 10 are larger than that of the conductive electrode 4 to increase the convenience and reliability of subsequent assembly and soldering of the light-emitting element 400. In an embodiment, the outer side 101 of the extended electrode 10 is substantially coplanar with the outermost side 4001. In another embodiment, the outer side 101 of the extension electrode 10 is not coplanar with the outermost side 4001 of the light emitting element 400, or is retracted or convex. The material of the extension electrode 10 includes a metal such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), Tin (Sn) or an alloy thereof or a combination thereof. In another embodiment (not shown), the second reflective structure 3 of the light-emitting element 400 has an arcuate lower surface, the apex of which is lower than the lower surface 43 of the conductive electrode 4, thus extending the electrode 10 and the conductive electrode 4 The portion of the contact is surrounded by the second reflective structure 3. If the first portion 31 of the second reflective structure 3 has a curved lower surface, the extended electrode 10 overlying it will thus form a similar profile with an arcuate upper or lower surface.
本發明之另一實施例中,發光元件500之透明封裝結構6與光學轉換結構5之間具有另一個次透明封裝結構6’ ,如第7圖所示。發光元件500具有一次透明封裝結構6’ 於透明封裝結構6之上方,並完全覆蓋透明封裝結構6與發光主體1。光學轉換結構5共形的形成於次透明封裝結構6’ 上,並完全覆蓋次透明封裝結構6’、透明封裝結構6、以及發光主體1。次透明封裝結構6’ 的材料可以與透明封裝結構6相同或是不同。次透明封裝結構6’ 不包含波長轉換材料,但可選擇性地包含擴散粒子。在一實施例中,次透明封裝結構6’ 與透明封裝結構6是藉由一次步驟形成,次透明封裝結構6’ 的材料與透明封裝結構6相同。如第7圖所示,由於次透明封裝結構6’具有一弧形的上凸表面,發光主體1與光學轉換結構5間在各個方向上的距離較為相近,因此光線由各方向上自發光主體1射向光學轉換結構5的光路徑也較為平均,進而使得發光元件500於各角度的光特性(例如,光強度、色溫、顏色)亦較均勻。次透明封裝結構6’可先改變發光主體1射出光線的光型,再使其進入光學轉換結構5做轉換或是混合。次透明封裝結構6’可以依照所需要光型選擇不同的結構,例如,凹透鏡、菲涅耳透鏡(Fresnel lens)、方形、圓柱形、平截頭體等,惟以上所舉結構並不用以限制本發明的範圍。In another embodiment of the present invention, the transparent package structure 6 of the light-emitting element 500 and the optical conversion structure 5 have another sub-transparent package structure 6' as shown in FIG. The light-emitting element 500 has a primary transparent package structure 6' above the transparent package structure 6 and completely covers the transparent package structure 6 and the light-emitting body 1. The optical conversion structure 5 is conformally formed on the sub-transparent package structure 6' and completely covers the sub-transparent package structure 6', the transparent package structure 6, and the light-emitting body 1. The material of the sub-transparent package structure 6' may be the same as or different from the transparent package structure 6. The sub-transparent package structure 6' does not comprise a wavelength converting material, but may optionally comprise diffusing particles. In one embodiment, the sub-transparent package structure 6' and the transparent package structure 6 are formed by one step, and the material of the sub-transparent package structure 6' is the same as that of the transparent package structure 6. As shown in FIG. 7, since the sub-transparent package structure 6' has an arc-shaped upper convex surface, the distance between the light-emitting main body 1 and the optical conversion structure 5 in each direction is relatively close, so that the light is self-illuminating from all sides. The light path to the optical conversion structure 5 is also relatively uniform, and the light characteristics (for example, light intensity, color temperature, and color) of the light-emitting element 500 at each angle are also relatively uniform. The sub-transparent package structure 6' can change the light pattern of the light emitted from the light-emitting body 1 and then enter the optical conversion structure 5 for conversion or mixing. The sub-transparent package structure 6' can select different structures according to the desired light type, for example, a concave lens, a Fresnel lens, a square, a cylinder, a frustum, etc., but the above structure is not limited The scope of the invention.
第8A圖為依據本發明另一實施例之一發光元件之剖面示意圖。發光元件600包含一發光主體1、一第一反射結構2、一第二反射結構3、一透明封裝結構6、以及一光學轉換結構5。發光主體1具有一出光面12、正負導電電極4位於發光主體1相對於出光面12的下表面、以及數個側表面11。其中,導電電極4包含較靠近出光面之上方部41、以及較遠離出光面12之下方部42,且導電電極4的最外緣不超過側表面11之最外緣(亦即,導電電極4可能與側表面11的最外緣齊平或較最外緣內縮)。第一反射結構2環繞發光主體1之側表面11、以及導電電極4之上方部41。第一反射結構2具有一下表面21、一上表面22、一內表面23、以及一與內表面23具有相近反射係數的外表面24。第一反射結構2的內表面23大致上垂直於下表面21,上表面22與發光主體1的出光面12具有不同的水平高度,且上表面22位於出光面12的上方,與出光面12間具有一大於0的高度差L。第二反射結構3位於第一反射結構2之下方,大體上與第一反射結構2垂直。第二反射結構3包含第一部分31環繞導電電極4之下方部42(由下視圖觀之,參考第1B圖)、以及第二部分32位於正負導電電極4之間的區域。其中,第一部份31靠近發光主體1的一端覆蓋導電電極4的下方部42之一外側表面,而第一部份31的上表面位於第一反射結構2的下方,並有部分與下表面21直接接觸。第二部分32填補於正負導電電極4之間的區域,第二部分32的兩端與導電電極4的一外側表面直接接觸並覆蓋發光主體1位於導電電極4間的區域。在另一實施例中,第一反射結構2與第二反射結構3是藉由一次步驟形成。第二反射結構3的下表面與導電電極4之下表面43大體上共平面。在另一實施例中,第二反射結構3具有一弧狀的下表面,因此,第二反射結構3之下表面可能會低於或高於導電電極4的下表面43。Figure 8A is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention. The light-emitting element 600 includes a light-emitting body 1, a first reflective structure 2, a second reflective structure 3, a transparent package structure 6, and an optical conversion structure 5. The light-emitting body 1 has a light-emitting surface 12, and the positive and negative conductive electrodes 4 are located on a lower surface of the light-emitting body 1 with respect to the light-emitting surface 12, and a plurality of side surfaces 11. The conductive electrode 4 includes an upper portion 41 closer to the light-emitting surface and a lower portion 42 farther from the light-emitting surface 12, and the outermost edge of the conductive electrode 4 does not exceed the outermost edge of the side surface 11 (ie, the conductive electrode 4) It may be flush with the outermost edge of the side surface 11 or retracted from the outermost edge). The first reflective structure 2 surrounds the side surface 11 of the light-emitting body 1 and the upper portion 41 of the conductive electrode 4. The first reflective structure 2 has a lower surface 21, an upper surface 22, an inner surface 23, and an outer surface 24 having a similar reflection coefficient to the inner surface 23. The inner surface 23 of the first reflective structure 2 is substantially perpendicular to the lower surface 21, and the upper surface 22 has a different horizontal level from the light-emitting surface 12 of the light-emitting body 1, and the upper surface 22 is located above the light-emitting surface 12, and between the light-emitting surface 12 Has a height difference L greater than zero. The second reflective structure 3 is located below the first reflective structure 2 and is substantially perpendicular to the first reflective structure 2. The second reflective structure 3 includes a region in which the first portion 31 surrounds the lower portion 42 of the conductive electrode 4 (viewed from a lower view, refer to FIG. 1B), and the second portion 32 is located between the positive and negative conductive electrodes 4. The first portion 31 is adjacent to one end of the light-emitting body 1 and covers one outer surface of the lower portion 42 of the conductive electrode 4. The upper surface of the first portion 31 is located below the first reflective structure 2, and has a portion and a lower surface. 21 direct contact. The second portion 32 is filled in a region between the positive and negative conductive electrodes 4, and both ends of the second portion 32 are in direct contact with an outer side surface of the conductive electrode 4 and cover a region where the light-emitting body 1 is located between the conductive electrodes 4. In another embodiment, the first reflective structure 2 and the second reflective structure 3 are formed by one step. The lower surface of the second reflective structure 3 is substantially coplanar with the lower surface 43 of the conductive electrode 4. In another embodiment, the second reflective structure 3 has an arcuate lower surface, and thus, the lower surface of the second reflective structure 3 may be lower or higher than the lower surface 43 of the conductive electrode 4.
於一實施例中,發光元件600中的透明封裝結構6包含或不包含波長轉換材料,且位於第一反射結構2、第二反射結構3、以及發光主體1之間。透明封裝結構6圍繞發光主體1之側表面11以及導電電極4之上方部41,並且完全覆蓋出光面12。光學轉換結構5位於透明封裝結構6之上方,覆蓋第一反射結構2、透明封裝結構6、以及發光主體1。光學轉換結構5的下表面52、透明封裝結構6之上表面61以及第一反射結構的上表面22大體上共平面且互相接合。換句話說,透明封裝結構6填滿於第一反射結構2、第二反射結構3、以及光學轉換結構5之間,並環繞發光主體1。光學轉換結構5之側表面51、第一反射結構2的外表面24、以及第二反射結構3的外表面33大體上共平面(如第8A圖所示,至少在一剖面圖中在一個直線上彼此對齊)。在另一實施例中,第二反射結構3的外表面33不與第一反射結構2的外表面24共平面,但仍位於第一反射結構2的下表面21下方。此時,透明封裝結構6的周圍仍被光學轉換結構5、第一反射結構2、以及第二反射結構3完整包覆,不與外界環境直接接觸。整體來說,第一反射結構2與第二反射結構3可反射發光主體1所發出的光線並將其導向透明封裝結構6的上表面61,再經過光學轉換結構5轉換及/或混和成所需的光線,使發光元件100向上出光。若透明封裝結構6中包含波長轉換材料,亦可以轉換發光主體1所發出的光線,且光學轉換結構5與透明封裝結構6的波長轉換材料可以為相同材料。若材料相同時,光學轉換結構5與透明封裝結構6的波長轉換材料可以具有不同的濃度。透明封裝結構6中的波長轉換材料也可以與光學轉換結構5中的波長轉換材料不同,例如,光學轉換結構5中包含較短放射波長螢光粉(例如黃色/黃綠色螢光粉),透明封裝結構6中包含較長放射波長螢光粉(例如紅色螢光粉)。在另一實施例中,在相鄰導電電極4之間,第二反射結構3的第二部分32與發光主體1之間存有透明封裝結構6。發光元件600的製作流程可以參考前開第2、3圖及其相應說明,若採用無斜邊的刀具切割透明封裝材料6,可形成如第8A圖所示具有相同上下寬度之透明封裝結構6。在另一實施例中,採用第2圖或是第3圖製作發光元件600時,採用的無斜邊的刀具具有一弧形剖面時,即可形成如第8B圖所示之發光元件600’。第一反射結構2的內表面23'於靠近光學轉換結構5處具有一弧面。詳言之,發光元件600'之第一反射結構2的上表面22小於下表面21。第8C圖顯示另一實施例之一發光元件之剖面示意圖。第一反射結構2的內表面23"於靠近第二反射結構3處具有一弧面。詳言之,發光元件600"之第一反射結構2的下表面21小於上表面22。發光元件600"的製作方法可參考後述之第9A~9G圖。In an embodiment, the transparent package structure 6 in the light-emitting element 600 includes or does not include a wavelength conversion material, and is located between the first reflective structure 2, the second reflective structure 3, and the light-emitting body 1. The transparent package structure 6 surrounds the side surface 11 of the light-emitting body 1 and the upper portion 41 of the conductive electrode 4, and completely covers the light-emitting surface 12. The optical conversion structure 5 is located above the transparent package structure 6 and covers the first reflective structure 2, the transparent package structure 6, and the illuminating body 1. The lower surface 52 of the optical conversion structure 5, the upper surface 61 of the transparent package structure 6, and the upper surface 22 of the first reflective structure are substantially coplanar and joined to each other. In other words, the transparent package structure 6 is filled between the first reflective structure 2, the second reflective structure 3, and the optical conversion structure 5, and surrounds the light-emitting body 1. The side surface 51 of the optical conversion structure 5, the outer surface 24 of the first reflective structure 2, and the outer surface 33 of the second reflective structure 3 are substantially coplanar (as shown in Fig. 8A, at least in a straight line in a cross-sectional view) Aligned with each other). In another embodiment, the outer surface 33 of the second reflective structure 3 is not coplanar with the outer surface 24 of the first reflective structure 2, but is still below the lower surface 21 of the first reflective structure 2. At this time, the periphery of the transparent package structure 6 is still completely covered by the optical conversion structure 5, the first reflection structure 2, and the second reflection structure 3, and is not in direct contact with the external environment. In general, the first reflective structure 2 and the second reflective structure 3 can reflect the light emitted by the light-emitting body 1 and guide it to the upper surface 61 of the transparent package structure 6, and then be converted and/or mixed by the optical conversion structure 5. The required light causes the light-emitting element 100 to emit light upward. If the transparent package structure 6 includes a wavelength conversion material, the light emitted by the light-emitting body 1 can also be converted, and the wavelength conversion material of the optical conversion structure 5 and the transparent package structure 6 can be the same material. If the materials are the same, the wavelength conversion material of the optical conversion structure 5 and the transparent package structure 6 may have different densities. The wavelength conversion material in the transparent package structure 6 may also be different from the wavelength conversion material in the optical conversion structure 5. For example, the optical conversion structure 5 includes a shorter radiation wavelength phosphor (for example, yellow/yellow green phosphor), and is transparent. The package structure 6 contains a longer radiation wavelength phosphor (for example, red phosphor). In another embodiment, between the adjacent conductive electrodes 4, a transparent package structure 6 is present between the second portion 32 of the second reflective structure 3 and the illuminating body 1. For the manufacturing process of the light-emitting element 600, reference may be made to the front opening sheets 2 and 3 and their corresponding descriptions. If the transparent encapsulating material 6 is cut by a tool without a bevel, a transparent encapsulating structure 6 having the same upper and lower width as shown in FIG. 8A can be formed. In another embodiment, when the light-emitting element 600 is fabricated by using FIG. 2 or FIG. 3, when the non-beveled tool has an arc-shaped cross section, the light-emitting element 600' as shown in FIG. 8B can be formed. . The inner surface 23' of the first reflective structure 2 has a curved surface near the optical conversion structure 5. In detail, the upper surface 22 of the first reflective structure 2 of the light-emitting element 600' is smaller than the lower surface 21. Fig. 8C is a schematic cross-sectional view showing a light-emitting element of another embodiment. The inner surface 23 of the first reflective structure 2 has a curved surface near the second reflective structure 3. In detail, the lower surface 21 of the first reflective structure 2 of the light-emitting element 600" is smaller than the upper surface 22. For the method of fabricating the light-emitting element 600", reference can be made to the figures 9A to 9G described later.
發光元件600的光學轉換結構5可以為單層結構或多層結構,若為多層結構可以參考第4圖及其相應說明。再者,發光元件600亦可以具有一光學元件設置於光學轉換結構5上方,可以參考第5圖及其相應說明。發光元件600亦可以於導電電極4下方設置延伸電極,可以參考第6圖及其相應說明。發光元件600之透明封裝結構6與光學轉換結構5之間亦可具有一個次透明封裝結構,可參考第7圖及其相應說明。The optical conversion structure 5 of the light-emitting element 600 may be a single layer structure or a multilayer structure. For a multilayer structure, reference may be made to FIG. 4 and its corresponding description. Furthermore, the light-emitting element 600 may have an optical element disposed above the optical conversion structure 5, and reference may be made to FIG. 5 and its corresponding description. The light-emitting element 600 can also be provided with an extension electrode under the conductive electrode 4. Referring to FIG. 6 and its corresponding description. The transparent package structure 6 of the light-emitting element 600 and the optical conversion structure 5 may also have a sub-transparent package structure, which can be referred to FIG. 7 and its corresponding description.
第9A~9H圖為依據本發明一實施例之發光元件之製作流程示意圖。與前述製作流程相同的符號、記號表示類似、或是相同的元件或裝置,將不再贅述。參照第9A圖,首先提供一具有黏著性的第一暫時載具7,將複數個發光主體1的兩個導電電極4安置於第一暫時載具7上,導電電極4的下方部42埋進第一暫時載具7裡。相鄰發光主體1間之區域定義為走道區。接著,形成透明封裝結構6以填滿發光主體1之走道區,並且覆蓋發光主體1之出光面12及未被發光主體1覆蓋之第一暫時載具7的上表面。如第9B圖所示,使用刀具切割透明封裝結構6以形成切割道62。需特別注意的是,刀具可能會在第一暫時載具7上產生割痕,但並不會實質上切斷第一暫時載具7。換言之,第一暫時載具7上仍然附著各個被透明封裝結構6包覆之發光主體1。如同前述,可選擇具有斜邊的刀具,製作出如第1A圖所示之具有倒梯形形狀之透明封裝結構6的發光元件。或者,選擇無斜邊的刀具,製作出如第8A圖所示具有大體上似四方形之透明封裝結構6的發光元件。9A to 9H are schematic views showing a manufacturing process of a light-emitting element according to an embodiment of the present invention. The same symbols and symbols as those in the above-described production process are similar or identical components, and will not be described again. Referring to FIG. 9A, a first temporary carrier 7 having adhesiveness is first provided, and two conductive electrodes 4 of a plurality of light-emitting bodies 1 are disposed on the first temporary carrier 7, and the lower portion 42 of the conductive electrode 4 is buried. The first temporary carrier 7 is included. The area between adjacent light-emitting bodies 1 is defined as a walkway area. Next, the transparent package structure 6 is formed to fill the walkway area of the light-emitting body 1, and cover the light-emitting surface 12 of the light-emitting body 1 and the upper surface of the first temporary carrier 7 not covered by the light-emitting body 1. As shown in Fig. 9B, the transparent package structure 6 is cut using a cutter to form a dicing street 62. It is important to note that the tool may create a cut on the first temporary carrier 7, but will not substantially cut the first temporary carrier 7. In other words, the respective light-emitting bodies 1 covered by the transparent package structure 6 are still attached to the first temporary carrier 7. As described above, a tool having a beveled edge can be selected to produce a light-emitting element having a transparent trapezoidal-shaped transparent package structure 6 as shown in Fig. 1A. Alternatively, a tool having no beveled edge is selected to produce a light-emitting element having a substantially square-shaped transparent package structure 6 as shown in Fig. 8A.
如第9C圖所示,形成第一反射結構2於切割道62之間。在此,也可進行一拋光製程(polish process),使透明封裝結構6之上表面61平坦化,並且藉此拋光步驟可以清除溢流到透明封裝結構6上之第一反射結構2。接著,如第9D圖所示,形成光學轉換結構5於透明封裝結構6的上表面61以及第一反射結構2之上方。如第9E圖所示,提供一具有黏著性的第二暫時載具8黏著於光學轉換結構5相對於第一暫時載具7的另一面上。之後,移除第一暫時載具7,暴露出導電電極4的下方部42以及下表面43、和透明封裝結構6的下表面63。此時透明封裝結構6的下表面63與導電電極4的下表面43沒有共平面。具體而言,導電電極4的下方部42是突出於透明封裝結構6之外。隨後,如第9F圖所示,翻轉第9E圖中的結構,形成第二反射結構3於透明封裝結構6相對於第二暫時載具8的另一面上,並使第二反射結構3環繞各個導電電極4的外側表面、覆蓋透明封裝結構6之下表面63、以及第一反射結構2的下表面21。其中,第二反射結構3並未覆蓋到導電電極4的全部下表面43。如第9G圖所示,切割位於切割道62中的第一反射結構2以及光學轉換結構5,並移除第二暫時載具8,形成複數個獨立的發光元件。在另一實施例中,於第9B圖的步驟中,採用的刀具之刀尖具有一弧形剖面時,透明封裝結構6靠近第一暫時載具7處即可產生一弧型的表面或線條,可形成如第8C圖之發光元件,發光元件600’’的第一反射結構2於靠近第二反射結構處3的表面具有一弧面。As shown in FIG. 9C, the first reflective structure 2 is formed between the dicing streets 62. Here, a polish process may also be performed to planarize the upper surface 61 of the transparent package structure 6, and thereby the polishing step may remove the first reflective structure 2 overflowing onto the transparent package structure 6. Next, as shown in FIG. 9D, the optical conversion structure 5 is formed above the upper surface 61 of the transparent package structure 6 and the first reflective structure 2. As shown in FIG. 9E, a second temporary carrier 8 having adhesiveness is adhered to the other surface of the optical conversion structure 5 with respect to the first temporary carrier 7. Thereafter, the first temporary carrier 7 is removed, exposing the lower portion 42 and the lower surface 43 of the conductive electrode 4, and the lower surface 63 of the transparent package structure 6. At this time, the lower surface 63 of the transparent package structure 6 is not coplanar with the lower surface 43 of the conductive electrode 4. Specifically, the lower portion 42 of the conductive electrode 4 protrudes beyond the transparent package structure 6. Subsequently, as shown in FIG. 9F, the structure in FIG. 9E is flipped to form a second reflective structure 3 on the other side of the transparent package structure 6 with respect to the second temporary carrier 8, and the second reflective structure 3 is surrounded by each The outer surface of the conductive electrode 4, the lower surface 63 of the transparent package structure 6, and the lower surface 21 of the first reflective structure 2. Wherein, the second reflective structure 3 does not cover all of the lower surface 43 of the conductive electrode 4. As shown in Fig. 9G, the first reflective structure 2 and the optical conversion structure 5 located in the dicing street 62 are cut, and the second temporary carrier 8 is removed to form a plurality of individual illuminating elements. In another embodiment, in the step of FIG. 9B, when the cutting edge of the tool has an arc-shaped cross section, the transparent packaging structure 6 is adjacent to the first temporary carrier 7 to generate an arc-shaped surface or line. The light-emitting element of FIG. 8C can be formed, and the first reflective structure 2 of the light-emitting element 600'' has a curved surface at a surface close to the second reflective structure 3.
第10圖為依據本發明另一實施例之一發光元件之剖面示意圖。發光元件700包含一發光主體1、一第一反射結構2、一第二反射結構3、一透明封裝結構6、以及一光學轉換結構5。發光主體1具有一出光面12、正負導電電極4位於發光主體1相對於出光面12的下表面、以及數個側表面11。其中,導電電極4包含較靠近出光面之上方部41、以及較遠離出光面12之下方部42。導電電極4的最外緣不超過側表面11之最外緣(亦即,導電電極4可能與側表面11的最外緣齊平或較最外緣內縮)。透明封裝結構6包含或不包含波長轉換材料,圍繞發光主體1之側表面11、出光面12、以及導電電極4之上方部41,並且完全覆蓋出光面12。透明封裝結構6之上表面61位於出光面12上方,且與出光面12相距一大於0的距離L。光學轉換結構5位於透明封裝結構6之上方,覆蓋透明封裝結構6、以及發光主體1。光學轉換結構5具有比透明封裝結構6大之寬度。詳言之,透明封裝結構6的側表面64不與光學轉換結構5的側表面51共平面(如第10圖所示,側表面64與側表面51不在一個直線上相互對齊),且側表面64較側表面51靠近發光主體1。透明封裝結構6之側表面64與光學轉換結構之下表面52大體上互相垂直,透明封裝結構6之上表面61大體上與光學轉換結構5之下表面52彼此接觸。第一反射結構2環繞透明封裝結構6以及光學轉換結構5,其內表面23與外表面24具有相近的反射係數。第一反射結構2的下表面21大體上與透明封裝結構6的下表面63共平面並彼此接觸。Figure 10 is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention. The light-emitting element 700 includes a light-emitting body 1, a first reflective structure 2, a second reflective structure 3, a transparent package structure 6, and an optical conversion structure 5. The light-emitting body 1 has a light-emitting surface 12, and the positive and negative conductive electrodes 4 are located on a lower surface of the light-emitting body 1 with respect to the light-emitting surface 12, and a plurality of side surfaces 11. The conductive electrode 4 includes an upper portion 41 that is closer to the light-emitting surface and a lower portion 42 that is farther from the light-emitting surface 12 . The outermost edge of the conductive electrode 4 does not exceed the outermost edge of the side surface 11 (i.e., the conductive electrode 4 may be flush with the outermost edge of the side surface 11 or retracted from the outermost edge). The transparent package structure 6 includes or does not include a wavelength converting material, surrounds the side surface 11, the light exit surface 12, and the upper portion 41 of the conductive electrode 4 of the light emitting body 1, and completely covers the light surface 12. The upper surface 61 of the transparent package structure 6 is located above the light-emitting surface 12 and is spaced apart from the light-emitting surface 12 by a distance L greater than zero. The optical conversion structure 5 is located above the transparent package structure 6 and covers the transparent package structure 6 and the illuminating body 1. The optical conversion structure 5 has a larger width than the transparent package structure 6. In detail, the side surface 64 of the transparent package structure 6 is not coplanar with the side surface 51 of the optical conversion structure 5 (as shown in FIG. 10, the side surface 64 and the side surface 51 are not aligned with each other in a straight line), and the side surface The 64 side surface 51 is adjacent to the light-emitting body 1. The side surface 64 of the transparent package structure 6 and the lower surface 52 of the optical conversion structure are substantially perpendicular to each other, and the upper surface 61 of the transparent package structure 6 is substantially in contact with the lower surface 52 of the optical conversion structure 5. The first reflective structure 2 surrounds the transparent package structure 6 and the optical conversion structure 5, the inner surface 23 of which has a similar reflection coefficient to the outer surface 24. The lower surface 21 of the first reflective structure 2 is substantially coplanar with and in contact with the lower surface 63 of the transparent package structure 6.
於一實施例中,第一反射結構2具有一不平均的寬度。第一反射結構2的內表面23包含三個部分231、232、233(數量三在此僅為例示,非用以限制本發明之專利範圍或應用於其他數量)。於第10圖中,三個部分231、232、233並未在一直線上彼此對齊。第一部分231與第三部分233大致平行於發光主體1的側表面11。第二部分232連接且大致上垂直於第一部分231與第三部分233。內表面23的第一部分231大致上垂直於下表面21(因製程條件,第一部分231與第三部分233也可能會向內或向外傾斜於下表面21)且圍繞透明封裝結構6與發光主體1的側表面11。第一部分231與發光主體1的側表面11具有一大於0的距離,並且與透明封裝結構6之側表面64接觸。第二部分232與光學轉換結構5之下表面52接觸。詳言之,第二部分232與靠近側表面51的部份下表面52重疊。第三部分233圍繞且接觸光學轉換結構5的側表面51。第一部分231與外表面24具有一距離W7。第三部分233與外表面24具有一距離W6。W7不同於且大於W6。換句話說,第一反射結構2具有不同厚度的兩個部分,第一部份25的厚度W7大於第二部分26的厚度W6,且圍繞透明封裝結構6;第二部分26圍繞光學轉換結構5。其中,W7大於W6的1.3倍,更佳地,為大於2倍的W6。於一實施例中,W7=100或129μm, W6=45.2或82.8μm。第一反射結構2的上表面22,亦即第二部分26的上表面大體上與光學轉換結構5之上表面53共平面。因此,光學轉換結構5是被設置於第一反射結構2內,並暴露出上表面53。第一部份25的部分上表面被光學轉換結構5之下表面52所覆蓋。詳言之,光學轉換結構5靠近側表面51之部分與第一反射結構2之下凹處互相接觸,而光學轉換結構5位於中間處的下表面52與透明封裝結構6互相接觸,使第一反射結構2與光學轉換結構5的接觸面形成如 L形的形狀。換句話說,第二部分232與第三部分233的剖面呈現如L形的外型(如第10圖所示之剖面圖中)。In an embodiment, the first reflective structure 2 has an uneven width. The inner surface 23 of the first reflective structure 2 comprises three portions 231, 232, 233 (the number three is merely exemplary here, and is not intended to limit the scope of the invention or to apply other quantities). In Fig. 10, the three portions 231, 232, 233 are not aligned with each other in a straight line. The first portion 231 and the third portion 233 are substantially parallel to the side surface 11 of the light-emitting body 1. The second portion 232 is coupled and substantially perpendicular to the first portion 231 and the third portion 233. The first portion 231 of the inner surface 23 is substantially perpendicular to the lower surface 21 (the first portion 231 and the third portion 233 may also be inclined inward or outward to the lower surface 21 due to process conditions) and surrounds the transparent package structure 6 and the illuminating body. Side surface 11 of 1. The first portion 231 has a distance greater than 0 from the side surface 11 of the light-emitting body 1 and is in contact with the side surface 64 of the transparent package structure 6. The second portion 232 is in contact with the lower surface 52 of the optical conversion structure 5. In detail, the second portion 232 overlaps a portion of the lower surface 52 adjacent to the side surface 51. The third portion 233 surrounds and contacts the side surface 51 of the optical conversion structure 5. The first portion 231 has a distance W7 from the outer surface 24. The third portion 233 has a distance W6 from the outer surface 24. W7 is different and larger than W6. In other words, the first reflective structure 2 has two portions of different thicknesses, the thickness W7 of the first portion 25 is greater than the thickness W6 of the second portion 26, and surrounds the transparent package structure 6; the second portion 26 surrounds the optical conversion structure 5 . Among them, W7 is greater than 1.3 times W6, and more preferably, W6 is more than 2 times. In one embodiment, W7 = 100 or 129 μm, W6 = 45.2 or 82.8 μm. The upper surface 22 of the first reflective structure 2, i.e., the upper surface of the second portion 26, is generally coplanar with the upper surface 53 of the optical conversion structure 5. Therefore, the optical conversion structure 5 is disposed in the first reflective structure 2 and exposes the upper surface 53. A portion of the upper surface of the first portion 25 is covered by the lower surface 52 of the optical conversion structure 5. In detail, a portion of the optical conversion structure 5 near the side surface 51 is in contact with the recess below the first reflective structure 2, and the lower surface 52 of the optical conversion structure 5 at the middle contacts the transparent package structure 6 to make the first The contact surface of the reflective structure 2 and the optical conversion structure 5 is formed in an L-shaped shape. In other words, the cross-sections of the second portion 232 and the third portion 233 exhibit an L-shaped profile (as in the cross-sectional view shown in FIG. 10).
參考第10圖,於一實施例中,第二反射結構3位於第一反射結構2之下方且與第一反射結構2垂直。第二反射結構3包含第一部分31環繞導電電極4之下方部42、以及第二部分32覆蓋於兩導電電極4之間的區域。其中,第一部份31靠近發光主體1的一端覆蓋導電電極4的下方部42之一外側表面,而上表面位於第一反射結構2的下方,並與下表面21、63直接接觸。第二部分32填補於相鄰導電電極4之間的區域,第二部分32的兩端與導電電極4的外側表面直接接觸。因此,未被導電電極4覆蓋到的發光主體1之下表面大多數或全部皆被第二反射結構3覆蓋。在另一實施例中,第一反射結構2與第二反射結構3是藉由一次步驟形成。第二反射結構3的下表面與兩個導電電極4之下表面43大體上共平面。在另一實施例中,第二反射結構3具有一弧狀的下表面,第二反射結構3之下表面因此通常高於或低於導電電極4的下表面43。另一實施例中,在相鄰導電電極4之間,第二反射結構3的第二部分32與發光主體1之間存有透明封裝結構6。第一反射結構2與第二反射結構3可反射發光主體1所發出的光並將其導向透明封裝結構6的上表面61,再經過光學轉換結構5轉換及/或混和成所需的光線,使發光元件700向上出光。若透明封裝結構6中包含波長轉換材料,亦可以轉換發光主體1所發出的光線,且光學轉換結構5與透明封裝結構6的波長轉換材料可以為相同材料。若材料相同時,光學轉換結構5與透明封裝結構6的波長轉換材料可以具有不同的濃度。透明封裝結構6中的波長轉換材料也可以與光學轉換結構5中的波長轉換材料不同,例如,光學轉換結構5中包含較短放射波長螢光粉(例如黃色/黃綠色螢光粉),透明封裝結構6中包含較長放射波長螢光粉(例如紅色螢光粉)。發光元件700的第一反射結構2圍繞光學轉換結構5,因此,發光元件700的發光角度較發光元件100~600小。在一實施例中,發光元件700的發光角度小於125度,較佳為不大於120度。在此所描述之發光角度定義為當亮度為最大亮度之50%時所包含的角度範圍。發光角度之詳細描述可參考台灣申請案104103105之內容,並將其援引為本案之內容。在另一實施例中,發光元件700並無第二反射結構3,使兩導電電極4的下方部42裸露出來。Referring to FIG. 10, in an embodiment, the second reflective structure 3 is located below the first reflective structure 2 and perpendicular to the first reflective structure 2. The second reflective structure 3 includes a region in which the first portion 31 surrounds the lower portion 42 of the conductive electrode 4 and the second portion 32 covers the two conductive electrodes 4. The first portion 31 is adjacent to one end of the light-emitting body 1 and covers one outer surface of the lower portion 42 of the conductive electrode 4, and the upper surface is located below the first reflective structure 2 and is in direct contact with the lower surface 21, 63. The second portion 32 is filled in a region between adjacent conductive electrodes 4, and both ends of the second portion 32 are in direct contact with the outer surface of the conductive electrode 4. Therefore, most or all of the lower surface of the light-emitting body 1 not covered by the conductive electrode 4 is covered by the second reflective structure 3. In another embodiment, the first reflective structure 2 and the second reflective structure 3 are formed by one step. The lower surface of the second reflective structure 3 is substantially coplanar with the lower surface 43 of the two conductive electrodes 4. In another embodiment, the second reflective structure 3 has an arcuate lower surface, and the lower surface of the second reflective structure 3 is thus generally higher or lower than the lower surface 43 of the conductive electrode 4. In another embodiment, between the adjacent conductive electrodes 4, a transparent package structure 6 is stored between the second portion 32 of the second reflective structure 3 and the illuminating body 1. The first reflective structure 2 and the second reflective structure 3 can reflect the light emitted by the light-emitting body 1 and guide it to the upper surface 61 of the transparent package structure 6, and then be converted and/or mixed into the desired light by the optical conversion structure 5. The light-emitting element 700 is caused to emit light upward. If the transparent package structure 6 includes a wavelength conversion material, the light emitted by the light-emitting body 1 can also be converted, and the wavelength conversion material of the optical conversion structure 5 and the transparent package structure 6 can be the same material. If the materials are the same, the wavelength conversion material of the optical conversion structure 5 and the transparent package structure 6 may have different densities. The wavelength conversion material in the transparent package structure 6 may also be different from the wavelength conversion material in the optical conversion structure 5. For example, the optical conversion structure 5 includes a shorter radiation wavelength phosphor (for example, yellow/yellow green phosphor), and is transparent. The package structure 6 contains a longer radiation wavelength phosphor (for example, red phosphor). The first reflective structure 2 of the light-emitting element 700 surrounds the optical conversion structure 5, and therefore, the light-emitting element 700 has a smaller light-emitting angle than the light-emitting elements 100-600. In one embodiment, the illumination element 700 has an illumination angle of less than 125 degrees, preferably no more than 120 degrees. The angle of illumination described herein is defined as the range of angles that are included when the brightness is 50% of the maximum brightness. For a detailed description of the illuminating angle, refer to the contents of the Taiwan application 104103105 and refer to it as the content of this case. In another embodiment, the light-emitting element 700 has no second reflective structure 3, and the lower portion 42 of the two conductive electrodes 4 is exposed.
本發明之另一實施例中,發光元件800之第一反射結構2除了具有不同厚度的第一部份25以及第二部分26,還具有一第三部分27位於第一部份25與第二部分26之間,換言之,第一反射結構2的內表面23之第二部分232為一個斜面,如第11圖所示。發光元件800包含一發光主體1、一第一反射結構2、一第二反射結構3、一透明封裝結構6、以及一光學轉換結構5。第一反射結構2之第一部份25以及第二部份26具有一似四邊形的剖面,第三部分27具有一似梯形的剖面。第三部分27較寬的下底與第一部分25互相接觸,較窄的上底與第二部分26互相接觸。第三部分27具有一斜邊271自第一部份25的內表面251往第二部分26的內表面261延伸。第三部分27之斜邊271的一端2711與第二部分26的內表面261接觸。換言之,第一反射結構2的內表面23包含未在一直線上彼此對齊的三個部份231、232、233。第一部分231與第三部分233大致平行於發光主體1的側表面11(因製程條件,第一部分231與第三部分233也可能會向內或向外傾斜,並不會平行於側表面11)。第二部分232連接且不垂直於第一部分231與第三部分233。第二部分232與外表面24的距離沿著由第一部分231往第三部分233的方向遞減。第三部分233的一端234與第二部分232接觸。因此,光學轉換結構5的下表面52不與第一反射結構2接觸,且透明封裝結構6的上表面61與光學轉換結構5的下表面52大體上等寬。透明封裝結構6靠近光學轉換結構5的上部具有一梯形的形狀。透明封裝結構6的寬度沿著由第一部分231往第三部分233的方向遞增。於另一實施例中(未顯示),第三部分27之斜邊271一端2711與光學轉換結構5的下表面52接觸,不與第二部分26的內表面261接觸。因此,光學轉換結構5靠近側表面51的部分下表面52與第一反射結構2接觸。第一反射結構與光學轉換結構相接的位置呈現狀似第10圖的L型線條。亦即,第二部分232一端234與光學轉換結構5的下表面52接觸,不與第三部分233接觸。發光主體1、第二反射結構3、透明封裝結構6、以及光學轉換結構5的詳細說明可以參考前開發光元件700的相應段落。In another embodiment of the present invention, the first reflective structure 2 of the light-emitting element 800 has a first portion 25 and a second portion 26 having different thicknesses, and a third portion 27 located at the first portion 25 and the second portion. Between portions 26, in other words, second portion 232 of inner surface 23 of first reflective structure 2 is a bevel as shown in FIG. The light-emitting element 800 includes a light-emitting body 1, a first reflective structure 2, a second reflective structure 3, a transparent package structure 6, and an optical conversion structure 5. The first portion 25 and the second portion 26 of the first reflective structure 2 have a quadrangular cross section, and the third portion 27 has a trapezoidal cross section. The wider lower base of the third portion 27 is in contact with the first portion 25, and the narrower upper base and the second portion 26 are in contact with each other. The third portion 27 has a beveled edge 271 extending from the inner surface 251 of the first portion 25 to the inner surface 261 of the second portion 26. One end 2711 of the bevel 271 of the third portion 27 is in contact with the inner surface 261 of the second portion 26. In other words, the inner surface 23 of the first reflective structure 2 comprises three portions 231, 232, 233 that are not aligned with one another in a straight line. The first portion 231 and the third portion 233 are substantially parallel to the side surface 11 of the light-emitting body 1 (the first portion 231 and the third portion 233 may also be inclined inward or outward due to process conditions, and are not parallel to the side surface 11) . The second portion 232 is connected and not perpendicular to the first portion 231 and the third portion 233. The distance of the second portion 232 from the outer surface 24 decreases in a direction from the first portion 231 to the third portion 233. One end 234 of the third portion 233 is in contact with the second portion 232. Therefore, the lower surface 52 of the optical conversion structure 5 is not in contact with the first reflective structure 2, and the upper surface 61 of the transparent package structure 6 is substantially equal in width to the lower surface 52 of the optical conversion structure 5. The transparent package structure 6 has a trapezoidal shape near the upper portion of the optical conversion structure 5. The width of the transparent package structure 6 is increased along the direction from the first portion 231 to the third portion 233. In another embodiment (not shown), one end 2711 of the beveled edge 271 of the third portion 27 is in contact with the lower surface 52 of the optical conversion structure 5 and is not in contact with the inner surface 261 of the second portion 26. Therefore, the portion of the lower surface 52 of the optical conversion structure 5 close to the side surface 51 is in contact with the first reflective structure 2. The position where the first reflective structure is in contact with the optical conversion structure exhibits an L-shaped line similar to that of FIG. That is, the one end 234 of the second portion 232 is in contact with the lower surface 52 of the optical conversion structure 5 and is not in contact with the third portion 233. A detailed description of the light-emitting body 1, the second reflective structure 3, the transparent package structure 6, and the optical conversion structure 5 can be referred to the corresponding paragraph of the previously developed optical element 700.
發光元件700、800的光學轉換結構5可以為單層或多層的結構,若為多層結構,可以參考同第4圖及其相應的說明。發光元件700、800若具有一光學元件設置於光學轉換結構5上方,可以參考第5圖及其相應說明。若發光元件700、800於導電電極4下方設置延伸電極,可以參考第6圖及其相應說明。發光元件700、800之透明封裝結構6與光學轉換結構5之間若具有另一個次透明封裝結構,可以參考第7圖及其相應說明。The optical conversion structure 5 of the light-emitting elements 700, 800 may be a single layer or a multi-layer structure. If it is a multi-layer structure, reference may be made to FIG. 4 and its corresponding description. If the light-emitting elements 700, 800 have an optical element disposed above the optical conversion structure 5, reference may be made to FIG. 5 and its corresponding description. If the light-emitting elements 700, 800 are provided with extension electrodes under the conductive electrodes 4, reference can be made to FIG. 6 and its corresponding description. If there is another sub-transparent package structure between the transparent package structure 6 of the light-emitting elements 700, 800 and the optical conversion structure 5, reference can be made to FIG. 7 and its corresponding description.
第12A圖至第12I圖為依據本發明之一實施例之發光元件700的製作流程。參照第12A圖,首先提供一承載板13,上方具有一黏著性的第一暫時載具7,將複數個發光主體1的導電電極4藉由第一暫時載具7黏著於承載板13上,且導電電極4的下方部42埋進第一暫時載具7內。相鄰發光主體1間之區域定義為走道區。接著,形成透明封裝結構6以填入發光主體1間之走道區,並且覆蓋發光主體1之出光面12及未被發光主體1覆蓋之第一暫時載具7的上表面。承載板13之材料可以為玻璃(Glass)或藍寶石(Sapphire)等透明硬質材料。如第12B圖所示,形成光學轉換結構5於透明封裝結構6的上表面61之上方。再提供一具有黏著性的第二暫時載具8於光學轉換結構5之上。接著,如第12C圖所示,翻轉第12B圖中的結構,移除第一暫時載具7以及承載板13,使承載板13與發光主體1及透明封裝結構6分離,並裸露出導電電極4的下方部42以及下表面43、和透明封裝結構6的下表面63。移除方法可以使用雷射剝離、加熱分離、溶解等方式。隨後,如第12D圖所示,提供一第四暫時載具7'於導電電極4及透明封裝結構6相對於第二暫時載具8的另一面。第四暫時載具7' 與第一暫時載具7可以具有相似或相同的材料特性,因此導電電極4之下方部42亦埋進第四暫時載具7' 內。12A to 12I are views showing a manufacturing process of a light-emitting element 700 according to an embodiment of the present invention. Referring to FIG. 12A, a carrier board 13 is provided, and an adhesive first temporary carrier 7 is disposed thereon. The conductive electrodes 4 of the plurality of illuminating bodies 1 are adhered to the carrier board 13 by the first temporary carrier 7. The lower portion 42 of the conductive electrode 4 is buried in the first temporary carrier 7. The area between adjacent light-emitting bodies 1 is defined as a walkway area. Next, the transparent package structure 6 is formed to fill the walkway area between the light-emitting bodies 1, and to cover the light-emitting surface 12 of the light-emitting body 1 and the upper surface of the first temporary carrier 7 not covered by the light-emitting body 1. The material of the carrier plate 13 may be a transparent hard material such as glass or sapphire. As shown in FIG. 12B, the optical conversion structure 5 is formed above the upper surface 61 of the transparent package structure 6. Further, a second temporary carrier 8 having adhesiveness is provided on the optical conversion structure 5. Next, as shown in FIG. 12C, the structure in FIG. 12B is reversed, the first temporary carrier 7 and the carrier plate 13 are removed, the carrier plate 13 is separated from the light-emitting body 1 and the transparent package structure 6, and the conductive electrode is exposed. The lower portion 42 and the lower surface 43 of the fourth surface and the lower surface 63 of the transparent package structure 6. The removal method can be performed by laser peeling, heating separation, dissolution, and the like. Subsequently, as shown in FIG. 12D, a fourth temporary carrier 7' is provided on the other side of the conductive electrode 4 and the transparent package structure 6 with respect to the second temporary carrier 8. The fourth temporary carrier 7' and the first temporary carrier 7 may have similar or identical material properties, so that the lower portion 42 of the conductive electrode 4 is also buried in the fourth temporary carrier 7'.
接著,如第12E圖所示,使用刀具切割第四暫時載具7'以及透明封裝結構6以形成切割道62。刀具可能會在光學轉換結構5上產生割痕,但並不會切斷光學轉換結構5使其實質上分離。換言之,光學轉換結構5上仍然附著被透明封裝結構6包覆之發光主體1。然後,如第12F圖所示,使用另一較窄的刀具於切割道62處切割光學轉換結構5以形成一較切割道62窄的次切割道54。換言之,兩個不等寬的切割道62以及次切割道54使得圍繞於發光主體1的透明封裝結構6的寬度較光學轉換結構5小。此較窄的刀具可能會在第二暫時載具8上產生割痕,但並不會切斷第二暫時載具8使其實質上分離。換言之,第二暫時載具8上仍然附著被透明封裝結構6包覆之發光主體1及其被分離後的光學轉換結構5。隨後,如第12G圖所示,利用鋼板印刷、塗佈、刷塗、旋塗、噴墨印刷、點膠、濺鍍(sputtering)、或鑄模灌膠等方式形成第一反射結構2於切割道62、次切割道54之間,並使第一反射結構的下表面21與透明封裝結構6之下表面63大體上共平面。如第12H圖所示,移除第四暫時載具7′,暴露出導電電極4的下方部42和下表面43、以及透明封裝結構6之下表面63。接著,如第12I圖所示,利用鋼板印刷、塗佈、刷塗、旋塗、噴墨印刷方式形成第二反射結構3於透明封裝結構6相對於第二暫時載具8的另一面,使第二反射結構3環繞導電電極4的側表面、覆蓋透明封裝結構6之下表面63、以及第一反射結構2的下表面21。第二反射結構3並未覆蓋到導電電極4的全部下表面43。如第12I圖所示,切割位於切割道62及次切割道54中之第一反射結構2及第二反射結構3,再使用雷射剝離、加熱分離、溶解、照射紫外光等方式移除第二暫時載具8,形成複數個獨立的發光元件。Next, as shown in FIG. 12E, the fourth temporary carrier 7' and the transparent package structure 6 are cut using a cutter to form a dicing street 62. The tool may create cuts on the optical conversion structure 5, but will not cut the optical conversion structure 5 to be substantially separated. In other words, the light-emitting body 1 covered by the transparent package structure 6 is still attached to the optical conversion structure 5. Then, as shown in Fig. 12F, the optical conversion structure 5 is cut at the dicing street 62 using another narrower cutter to form a secondary scribe line 54 that is narrower than the dicing street 62. In other words, the two unequal width dicing streets 62 and the secondary dicing streets 54 make the width of the transparent package structure 6 surrounding the illuminating body 1 smaller than that of the optical conversion structure 5. This narrower tool may create a cut on the second temporary carrier 8, but does not cut the second temporary carrier 8 to substantially separate it. In other words, the light-emitting body 1 covered by the transparent package structure 6 and the separated optical conversion structure 5 are still attached to the second temporary carrier 8. Subsequently, as shown in FIG. 12G, the first reflective structure 2 is formed on the dicing street by means of steel plate printing, coating, brushing, spin coating, inkjet printing, dispensing, sputtering, or mold potting. 62. Between the secondary scribe lines 54, and the lower surface 21 of the first reflective structure is substantially coplanar with the lower surface 63 of the transparent package structure 6. As shown in FIG. 12H, the fourth temporary carrier 7' is removed, exposing the lower portion 42 and the lower surface 43 of the conductive electrode 4, and the lower surface 63 of the transparent package structure 6. Next, as shown in FIG. 12I, the second reflective structure 3 is formed on the other surface of the transparent package structure 6 with respect to the second temporary carrier 8 by means of steel plate printing, coating, brushing, spin coating, or inkjet printing. The second reflective structure 3 surrounds a side surface of the conductive electrode 4, covers a lower surface 63 of the transparent package structure 6, and a lower surface 21 of the first reflective structure 2. The second reflective structure 3 does not cover all of the lower surface 43 of the conductive electrode 4. As shown in FIG. 12I, the first reflective structure 2 and the second reflective structure 3 located in the scribe line 62 and the secondary scribe line 54 are cut, and then removed by laser stripping, heating separation, dissolution, and irradiation of ultraviolet light. The second temporary carrier 8 forms a plurality of independent light-emitting elements.
於第12A圖的步驟中,透明封裝結構6會填補於發光主體1之相鄰導電電極4之間。因此,如第12I圖所示,相鄰導電電極4的上方部41之間存有透明封裝結構6,使位於導電電極4之間的第二反射結構3之第二部分32與發光主體1之間存有透明封裝結構6。另一實施例中,於第12A圖的步驟中,透明封裝結構6沒有填補於發光主體1之相鄰導電電極4之間。因此,於第12I圖的步驟中,導電電極4之間只存有第二反射結構3之第二部分32,形成如第10圖所示之發光元件700。另一實施例中,於第12E圖的步驟中,使用一上寬下窄具有斜邊的刀具(未顯示)產生切割道62及/或次切割道54,使透明封裝結構6於靠近光學轉換結構5的部分形成如第11圖斜邊271的形狀。再接續之後的步驟,即可形成如光學元件800的結構。另一實施例中,於第12E圖與/或第12F圖的步驟中,若使用的刀具的刀尖或轉折處具有弧形剖面時,如同發光元件600'與/或600",第10圖中之發光元件700與第11圖中之發光元件800的第一反射結構2靠近光學轉換結構5的內表面具有一或多個弧面。In the step of FIG. 12A, the transparent package structure 6 is filled between the adjacent conductive electrodes 4 of the light-emitting body 1. Therefore, as shown in FIG. 12I, a transparent package structure 6 exists between the upper portions 41 of the adjacent conductive electrodes 4, so that the second portion 32 of the second reflective structure 3 between the conductive electrodes 4 and the light-emitting body 1 There is a transparent package structure 6. In another embodiment, in the step of FIG. 12A, the transparent package structure 6 is not filled between the adjacent conductive electrodes 4 of the light-emitting body 1. Therefore, in the step of Fig. 12I, only the second portion 32 of the second reflective structure 3 exists between the conductive electrodes 4, and the light-emitting element 700 as shown in Fig. 10 is formed. In another embodiment, in the step of FIG. 12E, a scribe line 62 and/or a secondary scribe line 54 are produced using a tool having a width (lower) and a beveled edge (not shown) to make the transparent package structure 6 close to the optical conversion. The portion of the structure 5 is formed in the shape of the oblique side 271 as shown in FIG. The structure as the optical element 800 can be formed by the subsequent steps. In another embodiment, in the steps of FIG. 12E and/or FIG. 12F, if the tool tip or the turning point of the tool used has an arc-shaped cross section, like the light-emitting element 600' and/or 600", FIG. The light-emitting element 700 and the first reflective structure 2 of the light-emitting element 800 in FIG. 11 have one or more curved faces near the inner surface of the optical conversion structure 5.
第13A圖為依據本發明另一實施例之一發光元件之剖面示意圖。發光元件900包含一發光主體1、一第一反射結構2、一光學轉換結構5、以及一擴散層14。發光主體1具有一出光面12、正負導電電極4位於發光主體1相對於出光面12的下表面、以及數個側表面11。其中,導電電極4包含較靠近出光面之上方部41、以及較遠離出光面12之下方部42。光學轉換結構5位於發光主體1之上並完全覆蓋出光面12,且包含波長轉換材料(55' 與55'')。其中,光學轉換結構5與出光面12直接接觸,亦即,光學轉換結構5與發光主體1之間並無額外的接合物質。光學轉換結構5的側表面51不與發光主體1的側表面11共平面。光學轉換結構5具有一寬度W5,1000μm ≦ W5 ≦1250μm。於一實施例中,W5 = 1100μm、或1150μm。發光主體1具有一寬度W3,其中,W5 > W3。亦即,光學轉換結構5的下表面包含一第一下表面521係與發光主體1之發光面12直接接觸,與一第二下表面522係不與發光主體1直接接觸並向外延伸超過發光主體1的最外緣。Figure 13A is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention. The light-emitting element 900 includes a light-emitting body 1, a first reflective structure 2, an optical conversion structure 5, and a diffusion layer 14. The light-emitting body 1 has a light-emitting surface 12, and the positive and negative conductive electrodes 4 are located on a lower surface of the light-emitting body 1 with respect to the light-emitting surface 12, and a plurality of side surfaces 11. The conductive electrode 4 includes an upper portion 41 that is closer to the light-emitting surface and a lower portion 42 that is farther from the light-emitting surface 12 . The optical conversion structure 5 is located above the illuminating body 1 and completely covers the illuminating surface 12, and contains wavelength converting materials (55' and 55''). The optical conversion structure 5 is in direct contact with the light-emitting surface 12, that is, there is no additional bonding substance between the optical conversion structure 5 and the light-emitting body 1. The side surface 51 of the optical conversion structure 5 is not coplanar with the side surface 11 of the light-emitting body 1. The optical conversion structure 5 has a width W5, 1000 μm ≦ W5 ≦ 1250 μm. In one embodiment, W5 = 1100 μm, or 1150 μm. The illuminating body 1 has a width W3, where W5 > W3. That is, the lower surface of the optical conversion structure 5 includes a first lower surface 521 that is in direct contact with the light emitting surface 12 of the light emitting body 1, and a second lower surface 522 that is not in direct contact with the light emitting body 1 and extends outward beyond the light. The outermost edge of the body 1.
光學轉換結構5包含第一光學轉換結構5' 以及第二光學轉換結構5"。其中,第二光學轉換結構5"位於第一光學轉換結構5'之上。亦即,第一光學轉換結構5'直接與發光主體的出光面12直接接觸,第二光學轉換結構5"不與發光主體的出光面12直接接觸。第一光學轉換結構5'內具有第一波長轉換材料55',第二光學轉換結構5"具有第二波長轉換材料55''。第一波長轉換材料55'與第二波長轉換材料55''具有相同的成分,亦即波長轉換材料55'與55''具有相似的激發與放射光譜。其中,大部分的第一波長轉換材料55'的粒徑大於7μm,於一實施例中,95%以上的第一波長轉換材料55'粒徑大於10μm。95%以上的第二波長轉換材料55''粒徑皆小於10μm。於一實施例中,第二波長轉換材料55''的粒徑皆小於5μm。換句話說,第一波長轉換材料55'中最大的粒徑為a, 第二波長轉換材料55''中最大的粒徑為b,a>b。螢光粉材料的形狀可為圓形、橢圓形、或不規則形狀的顆粒。在此的粒徑係指單一顆粒在一個2維平面(例如,一個剖面圖)或3維空間下所量測到的最大外徑。 此外,波長轉換材料55'相對於第一光學轉換結構5'具有第一重量百分比,波長轉換材料55''相對於第二光學轉換結構5"具有第二重量百分比。第一重量百分比大於第二重量百分比,例如,第一重量百分比為第二重量百分比的5倍以上。於一實施例中,第一重量百分比大於90%,第二重量百分比小於10%。換句話說,第二光學轉換結構5"大部分的組成皆為基體,只有小粒徑的波長轉換材料小比例地分散在基體中。又或者說,於一側視圖中,第一波長轉換材料55'於第一光學轉換結構5'中的面積密度大於第二波長轉換材料55''於第二光學轉換結構5'中'的面積密度,例如:五倍以上。重量百分比的量測可以採用但不限於熱重分析(TGA)的方式,螢光粉材料的粒徑大小可以採用但不限於電子顯微鏡的方式量測。螢光粉材料於光學轉換結構的面積密度可以採用但不限於電子顯微鏡的方式量測。The optical conversion structure 5 includes a first optical conversion structure 5' and a second optical conversion structure 5". The second optical conversion structure 5" is located above the first optical conversion structure 5'. That is, the first optical conversion structure 5' is directly in direct contact with the light-emitting surface 12 of the light-emitting body, and the second optical conversion structure 5" is not in direct contact with the light-emitting surface 12 of the light-emitting body. The first optical conversion structure 5' has the first The wavelength converting material 55', the second optical converting structure 5" has a second wavelength converting material 55". The first wavelength converting material 55' has the same composition as the second wavelength converting material 55'', that is, the wavelength converting materials 55' and 55'' have similar excitation and emission spectra. Wherein, most of the first wavelength converting material 55' has a particle diameter greater than 7 μm. In one embodiment, more than 95% of the first wavelength converting material 55' has a particle diameter greater than 10 μm. More than 95% of the second wavelength converting material 55'' has a particle size of less than 10 μm. In one embodiment, the second wavelength converting material 55" has a particle size of less than 5 [mu]m. In other words, the largest particle size in the first wavelength converting material 55' is a, and the largest particle size in the second wavelength converting material 55'' is b, a>b. The shape of the phosphor material may be a circular, elliptical, or irregularly shaped particle. Particle size herein refers to the largest outer diameter of a single particle measured in a 2-dimensional plane (eg, a cross-sectional view) or a 3-dimensional space. Furthermore, the wavelength converting material 55' has a first weight percentage relative to the first optical converting structure 5', and the wavelength converting material 55" has a second weight percentage relative to the second optical converting structure 5". The first weight percentage is greater than the second The weight percentage, for example, the first weight percentage is more than 5 times the second weight percentage. In one embodiment, the first weight percentage is greater than 90% and the second weight percentage is less than 10%. In other words, the second optical conversion structure 5" Most of the composition is a matrix, and only a small-sized wavelength-converting material is dispersed in a small proportion in the matrix. Or, in a side view, the area density of the first wavelength converting material 55' in the first optical converting structure 5' is greater than the area of the second wavelength converting material 55'' in the second optical converting structure 5' Density, for example: more than five times. The measurement of the weight percentage may be by way of, but not limited to, thermogravimetric analysis (TGA), and the particle size of the phosphor powder material may be measured by means of, but not limited to, an electron microscope. The area density of the phosphor material in the optical conversion structure can be measured by means of, but not limited to, an electron microscope.
第一光學轉換結構5'與第二光學轉換結構5"之間並無明顯的分界線。如第13A圖所示,第一光學轉換結構5'靠近第二光學轉換結構5"之最上表面可以大體上描繪出一水平線,使第一光學轉換結構5'由最左側邊到最右側邊具有一大致均勻的第一厚度T1。此外,第二光學轉換結構5"也如同第一光學轉換結構5'由最左側邊到最右側邊具有一大致均勻的第二厚度T2,T1大於T2。光學轉換結構5具有一厚度(T1與T2的總和),50μm < (T1+T2) < 80μm。於一實施例中, T1+T2 ≈ 70μm;25μm < T1< 60μm,5μm < T2< 35μm。光學轉換結構5的第一下表面521以及第二下表面522具有相異的表面粗糙度。第一下表面521係與發光主體1之發光面12直接接觸並具有第一表面粗糙度R1,第二下表面522係不與發光主體1直接接觸且具有第二表面粗糙度R2,R2>R1。詳言之,第一下表面521大體上為一平整的表面,第二下表面522具有複數個微小的凹面以及凸面(例如:該些凹面凸面的最大高低落差>100nm或 150nm)。此外,光學轉換結構5的上表面53具有一第三表面粗糙度R3,光學轉換結構5的側表面51具有一第四表面粗糙度R4,於一實施例中,R2>R3>R4。There is no obvious boundary between the first optical conversion structure 5' and the second optical conversion structure 5". As shown in Fig. 13A, the first optical conversion structure 5' is close to the uppermost surface of the second optical conversion structure 5" A horizontal line is generally depicted such that the first optical conversion structure 5' has a substantially uniform first thickness T1 from the leftmost side to the rightmost side. Furthermore, the second optical conversion structure 5" also has a substantially uniform second thickness T2 from the leftmost side to the rightmost side as the first optical conversion structure 5', T1 being greater than T2. The optical conversion structure 5 has a thickness (T1 and The sum of T2), 50 μm < (T1 + T2) < 80 μm. In one embodiment, T1 + T2 ≈ 70 μm; 25 μm < T1 < 60 μm, 5 μm < T2 < 35 μm. The first lower surface 521 of the optical conversion structure 5 and The second lower surface 522 has a different surface roughness. The first lower surface 521 is in direct contact with the light emitting surface 12 of the light emitting body 1 and has a first surface roughness R1, and the second lower surface 522 is not directly connected to the light emitting body 1. Contacted and having a second surface roughness R2, R2 > R1. In detail, the first lower surface 521 is substantially a flat surface, and the second lower surface 522 has a plurality of minute concave surfaces and convex surfaces (for example, the concave surfaces) The maximum height difference of the convex surface is >100 nm or 150 nm. Further, the upper surface 53 of the optical conversion structure 5 has a third surface roughness R3, and the side surface 51 of the optical conversion structure 5 has a fourth surface roughness R4. In the example, R2>R3>R 4.
表面粗糙度可藉由量測剖面圖中粗糙表面的曲線得知。第14圖例示一個粗糙表面的剖面圖,粗糙表面的曲線可以區分成N段樣本長度(S1 、S2 、S3 …SN ),每一段樣本長度可定義一基準線RL (reference line)。其中,基準線RL (reference line)為一直線,穿越粗糙表面高低起伏的曲線,並與曲線產生數個交點而將曲線分成位於基準線RL 上下(左右)兩側的兩部分(第一曲線與第二曲線)。其中,第一曲線與基準線RL 形成的面積等於第二曲線與基準線形成的面積。每一段樣本長度相對此基準線可以量得一最高波峰(peak)Rp與最低波谷(trough)Rv。每一段樣本長度的最大粗糙度高度(Maximum Height of the Profile)Ry=|Rp|+|Rv|。因此,根據所有樣本長度的最大粗糙度高度Ry的平均值可以定義此表面的表面粗糙度。當Ry越大時,表面越粗糙。換言之,由肉眼觀之,粗糙表面上的複數個凹面與凸面的高低落差越大。The surface roughness can be obtained by measuring the curve of the rough surface in the cross-sectional view. Figure 14 illustrates a cross-sectional view of a rough surface. The curve of the rough surface can be divided into N-segment sample lengths (S 1 , S 2 , S 3 ... S N ), and each sample length can define a reference line R L (reference line ). Wherein, the reference line R L (reference line) is a straight line, crossing the curve of the rough surface of the rough surface, and generating a plurality of intersection points with the curve to divide the curve into two parts on the upper and lower sides (left and right) of the reference line R L (the first curve) With the second curve). Wherein, the area formed by the first curve and the reference line R L is equal to the area formed by the second curve and the reference line. Each segment of the sample length can be measured relative to the baseline to have a highest peak Rp and a lowest trough Rv. Maximum Height of the Profile Ry=|Rp|+|Rv| for each length of the sample. Therefore, the average roughness height Ry of all sample lengths can define the surface roughness of this surface. The larger the Ry, the rougher the surface. In other words, from the naked eye, the difference between the height of the plurality of concave surfaces and the convex surface on the rough surface is larger.
擴散層14位於光學轉換結構5之上,與光學轉換結構5直接接觸,並且大致上與光學轉換結構5等寬或具有相近的形狀(由上視圖觀之)。亦即,光學轉換結構5之側表面51與擴散層14之側表面141大體上共平面。參考第13A圖,擴散層14具有一厚度T3,10μm ≦ T3 ≦ 35μm。於一實施例中,T3=30μm。擴散層14包含一基體與擴散粒子。基體包含環氧樹脂(Epoxy)、矽膠(Silicone)、聚亞醯胺(PI)、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、Su8、丙烯酸樹脂(Acrylic Resin)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、或聚醚醯亞胺(Polyetherimide)。擴散粒子的成分包含但不限於二氧化矽、二氧化鈦、氧化鋯、氧化鋅或氧化鋁。於一實施例中,擴散層14中具有高重量百分濃度(weight percentage concentration,w/w)的二氧化矽,例如,重量百分濃度大於20%,例如:大於25%、大於30%、 或大於35%。高重量百分濃度的擴散層14可以使發光元件900於不同的視角下皆具有較佳的色均勻度。色均勻度可由△u'v'的值來表示,△u'v'的值越小表示色均勻度越好。u'及v'分別表示CIE 1976表色系統下的色座標,基準值(u0 ',v0 ')定義為所有角度下色座標的平均值,△u'為u'- u0 ' ,△v'為v'- v0 ', △u'v'=(△u'2 +△v'2 )1/2 。於一實施例中,發光元件900於視角0°至70°的△u'v'值皆小於0.003。此外,擴散層14具有一與光學轉換結構5直接接觸的下表面142,與一可供出光且相對於下表面142的上表面143,下表面142的表面粗糙度等於或近似光學轉換結構5之上表面53的表面粗糙度R3。上表面143具有一第六表面粗糙度R6,其中,R6<R2,且R6大致上近似於R3。側表面141的表面粗糙度大致上等於或近似光學轉換結構5之側表面51的表面粗糙度R4。亦即,擴散層14的側表面141與光學轉換結構5的側表面51具有相同或近似的表面粗糙度。於一實施例中,擴散層14的上表面143與下表面142具有近似的表面粗糙度,且較光學轉換結構5的第二下表面522平整。The diffusion layer 14 is located above the optical conversion structure 5, is in direct contact with the optical conversion structure 5, and is substantially the same width as the optical conversion structure 5 or has a similar shape (as viewed from above). That is, the side surface 51 of the optical conversion structure 5 is substantially coplanar with the side surface 141 of the diffusion layer 14. Referring to Fig. 13A, the diffusion layer 14 has a thickness T3, 10 μm ≦ T3 ≦ 35 μm. In one embodiment, T3 = 30 μm. The diffusion layer 14 includes a matrix and diffusion particles. The matrix comprises epoxy resin (Epoxy), silicone (Silicone), polyamidamine (PI), benzocyclobutene (BCB), perfluorocyclobutane (PFCB), Su8, acrylic resin (Acrylic Resin), poly Methyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), or polyetherimide. The components of the diffusing particles include, but are not limited to, ceria, titania, zirconia, zinc oxide or aluminum oxide. In one embodiment, the diffusion layer 14 has a high percentage by weight (w/w) of cerium oxide, for example, a concentration by weight greater than 20%, for example, greater than 25%, greater than 30%, Or greater than 35%. The high weight percent concentration of the diffusion layer 14 allows the light-emitting element 900 to have better color uniformity at different viewing angles. The color uniformity can be represented by the value of Δu'v', and the smaller the value of Δu'v', the better the color uniformity. u' and v' respectively represent the color coordinates under the CIE 1976 color system. The reference values (u 0 ', v 0 ') are defined as the average of the color coordinates at all angles, and Δu' is u'- u 0 '. Δv' is v'- v 0 ', Δu'v' = (Δu' 2 + Δv' 2 ) 1/2 . In one embodiment, the Δu'v' value of the light-emitting element 900 at a viewing angle of 0° to 70° is less than 0.003. In addition, the diffusion layer 14 has a lower surface 142 in direct contact with the optical conversion structure 5, and an upper surface 143 which is available to emit light and is opposite to the lower surface 142. The surface roughness of the lower surface 142 is equal to or approximate to the optical conversion structure 5. The surface roughness R3 of the upper surface 53. The upper surface 143 has a sixth surface roughness R6, where R6 < R2 and R6 is substantially similar to R3. The surface roughness of the side surface 141 is substantially equal to or approximates the surface roughness R4 of the side surface 51 of the optical conversion structure 5. That is, the side surface 141 of the diffusion layer 14 has the same or similar surface roughness as the side surface 51 of the optical conversion structure 5. In one embodiment, the upper surface 143 of the diffusion layer 14 has an approximate surface roughness to the lower surface 142 and is flatter than the second lower surface 522 of the optical conversion structure 5.
第一反射結構2圍繞且直接接觸發光主體1的側表面11、光學轉換結構5之側表面51、以及擴散層14之側表面141。第一反射結構2具有一不平均的寬度。第一反射結構2的內表面23包含未在一直線上彼此對齊的三個部份231、232、233(數量三在此僅為例示,非用以限制本發明之專利範圍或應用於其他數量)。第一部分231與第三部分233大致平行於發光主體1的側表面11。第二部分232連接且大致上垂直於第一部分231與第三部分233。內表面23的第一部分231大致上垂直於下表面21,且圍繞並接觸發光主體1的側表面11。第二部分232與光學轉換結構5之第二下表面522接觸。詳言之,第二部分232與第二下表面522完全重疊並具有相同的粗糙度。第三部分233圍繞且接觸光學轉換結構5與擴散層14的側表面141、51。第一部分231與外表面24具有一距離W7。第三部分233與外表面24具有一距離W6。W7不同於且大於W6。第一反射結構2的上表面22與擴散層14的上表面143大體上共平面。亦即,第一反射結構2並未覆蓋擴散層14的上表面143,使得由發光主體1發出的光線可以經由光學轉換結構5以及擴散層14之後,由擴散層14的上表面143向上出光。發光元件900具有一寬度W8約略等同於第一反射結構2的最大寬度,W8大約為W3的1.2~3倍。於一實施例中,W8/W3=1.3~2.6。此外。W8 > W5 > W3。第一反射結構2的材料可參考前開實施例的敘述。發光元件900具有一總高度T,T不大於300μm。於一實施例中,T不大於260μm、或250μm。光學轉換結構5與擴散層14的總高度(T1+T2+T3)較佳地不大於150μm。光學轉換結構5與擴散層14的高度是關係發光元件900發出光線的色溫與色均勻度的關鍵參數。於一實施例中,T1+T2+T3=120μm、100μm、或80μm。第13B圖顯示發光元件900的上視圖,擴散層14四周被第一反射結構2圍繞。因此,與發光元件700、或800類似,發光元件900中位於擴散層14下方的光學轉換結構5被第一反射結構2圍繞,因此,發光元件900具有較小的發光角度。在一實施例中,發光元件900的發光角度小於120度,較佳地不大於115度。第一反射結構2也圍繞覆蓋在光學轉換結構5上之擴散層14,可以使光學元件900具有較好的聚光效果與較佳的色均勻度。The first reflective structure 2 surrounds and directly contacts the side surface 11 of the light-emitting body 1, the side surface 51 of the optical conversion structure 5, and the side surface 141 of the diffusion layer 14. The first reflective structure 2 has an uneven width. The inner surface 23 of the first reflective structure 2 comprises three portions 231, 232, 233 that are not aligned with one another in a straight line (the third is merely exemplary here, and is not intended to limit the scope of the invention or to other quantities) . The first portion 231 and the third portion 233 are substantially parallel to the side surface 11 of the light-emitting body 1. The second portion 232 is coupled and substantially perpendicular to the first portion 231 and the third portion 233. The first portion 231 of the inner surface 23 is substantially perpendicular to the lower surface 21 and surrounds and contacts the side surface 11 of the light-emitting body 1. The second portion 232 is in contact with the second lower surface 522 of the optical conversion structure 5. In particular, the second portion 232 completely overlaps the second lower surface 522 and has the same roughness. The third portion 233 surrounds and contacts the side surfaces 141, 51 of the optical conversion structure 5 and the diffusion layer 14. The first portion 231 has a distance W7 from the outer surface 24. The third portion 233 has a distance W6 from the outer surface 24. W7 is different and larger than W6. The upper surface 22 of the first reflective structure 2 is substantially coplanar with the upper surface 143 of the diffusion layer 14. That is, the first reflective structure 2 does not cover the upper surface 143 of the diffusion layer 14 such that light emitted by the light-emitting body 1 can be emitted upward from the upper surface 143 of the diffusion layer 14 after passing through the optical conversion structure 5 and the diffusion layer 14. The light-emitting element 900 has a width W8 which is approximately equal to the maximum width of the first reflective structure 2, and W8 is approximately 1.2 to 3 times W3. In one embodiment, W8/W3 = 1.3 to 2.6. Also. W8 > W5 > W3. The material of the first reflective structure 2 can be referred to the description of the pre-opening embodiment. The light-emitting element 900 has a total height T, and T is not more than 300 μm. In one embodiment, T is no greater than 260 μm, or 250 μm. The total height (T1+T2+T3) of the optical conversion structure 5 and the diffusion layer 14 is preferably not more than 150 μm. The height of the optical conversion structure 5 and the diffusion layer 14 is a key parameter relating to the color temperature and color uniformity of the light emitted by the light-emitting element 900. In one embodiment, T1+T2+T3=120 μm, 100 μm, or 80 μm. FIG. 13B shows a top view of the light-emitting element 900, around which the diffusion layer 14 is surrounded by the first reflective structure 2. Therefore, similarly to the light-emitting element 700, or 800, the optical conversion structure 5 located under the diffusion layer 14 in the light-emitting element 900 is surrounded by the first reflection structure 2, and therefore, the light-emitting element 900 has a small illumination angle. In one embodiment, the illumination element 900 has an illumination angle of less than 120 degrees, preferably no more than 115 degrees. The first reflective structure 2 also surrounds the diffusion layer 14 overlying the optical conversion structure 5, which allows the optical element 900 to have a better concentrating effect and better color uniformity.
於另一實施例中,第一反射結構2的內表面23之第二部分232為一個斜面,如第15A圖所示。參考第15A圖,發光元件1000類似發光元件900,包含一發光主體1、一第一反射結構2、一光學轉換結構5、以及一擴散層14。與前述實施例相同的符號、記號表示類似、或是相同的元件或裝置,可以參考前述相關的圖式或段落。光學轉換結構5包含第一光學轉換結構5' 以及第二光學轉換結構5"。第一光學轉換結構5' 與第二光學轉換結構5"內的螢光粉材料具有不同的重量百分比濃度。其中,具有較低重量百分濃度的第二光學轉換結構5"位於具有較高重量百分濃度的第一光學轉換結構5'之上。如第15A圖所示,第一反射結構2的內表面包含未在一直線上彼此對齊的三個部份。第一部分231與第三部分233大致平行於發光主體1的側表面11。第二部分232連接且不垂直於第一部分231與第三部分233。第二部分232與外表面24的距離沿著由第一部分231往第三部分233的方向遞減。第一部份231圍繞並接觸發光主體1之側表面11,第二部分232圍繞並接觸第一光學轉換結構5'的下部(較靠近發光主體1的區域)。第三部分233圍繞並接觸擴散層14、第二光學轉換結構5''、以及第一光學轉換結構5'的上部(較遠離發光主體1的區域)。In another embodiment, the second portion 232 of the inner surface 23 of the first reflective structure 2 is a bevel as shown in FIG. 15A. Referring to FIG. 15A, the light-emitting element 1000 is similar to the light-emitting element 900, and includes a light-emitting body 1, a first reflective structure 2, an optical conversion structure 5, and a diffusion layer 14. The same symbols and symbols as those of the foregoing embodiments denote similar or identical elements or devices, and reference may be made to the aforementioned related drawings or paragraphs. The optical conversion structure 5 includes a first optical conversion structure 5' and a second optical conversion structure 5". The first optical conversion structure 5' and the phosphor material in the second optical conversion structure 5" have different weight percentage concentrations. Wherein the second optical conversion structure 5" having a lower weight percent concentration is located above the first optical conversion structure 5' having a higher concentration by weight. As shown in Fig. 15A, the inside of the first reflective structure 2 The surface includes three portions that are not aligned with each other in a straight line. The first portion 231 and the third portion 233 are substantially parallel to the side surface 11 of the light-emitting body 1. The second portion 232 is connected and not perpendicular to the first portion 231 and the third portion 233. The distance of the second portion 232 from the outer surface 24 decreases in a direction from the first portion 231 to the third portion 233. The first portion 231 surrounds and contacts the side surface 11 of the light-emitting body 1, and the second portion 232 surrounds and contacts the first portion a lower portion of an optical conversion structure 5' (a region closer to the light-emitting body 1). The third portion 233 surrounds and contacts the diffusion layer 14, the second optical conversion structure 5", and the upper portion of the first optical conversion structure 5' (more Keep away from the area of the illuminating body 1).
參考第15A圖,光學元件1000的光學轉換結構5具有一倒平截頭體的剖面。光學轉換結構5具有一與發光主體1直接接觸的下表面52,一相對於下表面52並與擴散層14直接接觸的上表面53、與上表面53相接的側表面51(側表面51可以因製程條件向內傾斜、或近乎垂直)、以及連接側表面51與下表面52的一斜面57。第15B圖顯示斜面57的放大圖,斜面57為一粗糙表面,具有一基準線RL1 ,RL1 大體上為一直線。斜面57具有複數個微小的凹面以及凸面,並具有一第二表面粗糙度R2,粗糙度的特徵可參考前開相關段落之敘述。詳言之,光學轉換結構5之斜面57的基準線基準線RL1 與下表面52間具有一傾斜角θ,此傾斜角θ為鈍角。於另一實施例中,如第16A圖所示,斜面57'具有弧狀的輪廓,並具有複數個微小的凹面以及凸面。第16B圖顯示斜面57'的放大圖,斜面57'為一粗糙表面,具有一基準線RL2 ,RL2 大體上為一弧線。發光元件1000'中的光學轉換結構5之斜面57'的基準線基準線RL2 與光學轉換結構5之下表面52具有一傾斜角θ',傾斜角θ'隨著斜面57遠離發光主體1逐漸增加。於一實施例中,斜面57、57'也可以設計成一平滑的表面。Referring to Fig. 15A, the optical conversion structure 5 of the optical element 1000 has a cross section of an inverted frustum. The optical conversion structure 5 has a lower surface 52 that is in direct contact with the light-emitting body 1, an upper surface 53 that is in direct contact with the diffusion layer 14 with respect to the lower surface 52, and a side surface 51 that is in contact with the upper surface 53 (the side surface 51 can A slope 57 that connects the side surface 51 and the lower surface 52 due to the process conditions being inclined inwardly or nearly vertically. The first inclined surface 15B show an enlarged view of FIG. 57, the inclined surface 57 is a rough surface having a reference line R L1, R L1 is substantially a straight line. The inclined surface 57 has a plurality of minute concave surfaces and convex surfaces, and has a second surface roughness R2. The characteristics of the roughness can be referred to the description of the preceding paragraph. In detail, the reference line R L1 of the slope 57 of the optical conversion structure 5 has an inclination angle θ with the lower surface 52, and the inclination angle θ is an obtuse angle. In another embodiment, as shown in FIG. 16A, the slope 57' has an arcuate profile and has a plurality of minute concave surfaces and convex surfaces. FIG. 16B show the inclined surface 57 'of the enlarged view of the inclined surface 57' is a rough surface having a reference line R L2, R L2 is substantially an arc. The reference line reference line R L2 of the slope 57' of the optical conversion structure 5 in the light-emitting element 1000' has an inclination angle θ' with the lower surface 52 of the optical conversion structure 5, and the inclination angle θ' gradually moves away from the light-emitting body 1 with the inclined surface 57. increase. In an embodiment, the ramps 57, 57' can also be designed as a smooth surface.
第17A~17H圖為依據本發明一實施例之發光元件之製作流程示意圖。與前述製作流程相同的符號、記號表示類似、或是相同的元件或裝置,可以參考前述圖式或相關段落。參照第17A圖,首先提供一承載板13,上方具有一黏著性的第一暫時載具7,將複數個發光主體1的導電電極4藉由第一暫時載具7黏著於承載板13上,且導電電極4的下方部42埋進第一暫時載具7內。相鄰發光主體1間之區域定義為走道區。接著,形成反射結構2'填入發光主體1間之走道區,並且覆蓋發光主體1之出光面12及未被發光主體1覆蓋之第一暫時載具7的上表面。如第17B圖所示,移除部分的反射結構2'以露出發光主體1之出光面12,形成反射結構2''。移除反射結構2'的方式包含濕式去膠法,例如水刀去膠法(Water Jet Deflash)或濕式噴砂去膠法(Wet Blasting Deflash)。水刀去膠法的原理是利用噴嘴將液體,例如水,加壓噴向並移除反射結構2'。濕式噴砂去膠法則在液體中添加特定的粒子,同時以液體的壓力以及粒子碰撞反射結構2'的表面來移除反射結構2'。可藉由粒子的大小與液體的壓力以控制移除反射結構2'的速度,藉由粒子碰撞時間的長短以控制移除反射結構2'的厚度。在一實施例中,藉由控制粒子碰撞力大小與碰撞時間,使位於發光主體1上方的反射結構被移除的厚度較位於走道上的反射結構被移除的厚度厚。因此位於走道上的反射結構2''的上表面28高於發光主體1之出光面12,如第17B圖顯示。在一實施例中,位於走道區的反射結構2''的上表面28與發光主體1之出光面大致共平面,即可形成如第13A圖的發光元件。此外,粒子可在反射結構2''之上表面28碰撞出複數個微小的凹凸結構。17A to 17H are schematic views showing a manufacturing process of a light-emitting element according to an embodiment of the present invention. The same symbols or symbols as those in the foregoing production process indicate similar or identical elements or devices, and may refer to the aforementioned drawings or related paragraphs. Referring to FIG. 17A, a carrier board 13 is provided, and an adhesive first temporary carrier 7 is disposed thereon. The conductive electrodes 4 of the plurality of illuminating bodies 1 are adhered to the carrier board 13 by the first temporary carrier 7. The lower portion 42 of the conductive electrode 4 is buried in the first temporary carrier 7. The area between adjacent light-emitting bodies 1 is defined as a walkway area. Next, the reflective structure 2' is formed to fill the aisle region between the light-emitting bodies 1, and covers the light-emitting surface 12 of the light-emitting body 1 and the upper surface of the first temporary carrier 7 that is not covered by the light-emitting body 1. As shown in FIG. 17B, a portion of the reflective structure 2' is removed to expose the light exit surface 12 of the light-emitting body 1 to form a reflective structure 2". The manner in which the reflective structure 2' is removed includes a wet stripping process such as Water Jet Deflash or Wet Blasting Deflash. The principle of the waterjet de-glue method is to use a nozzle to spray a liquid, such as water, against the reflective structure 2'. The wet blasting de-geling process adds specific particles to the liquid while removing the reflective structure 2' with the pressure of the liquid and the surface of the particles colliding with the reflective structure 2'. The thickness of the reflective structure 2' can be controlled by the size of the particles and the pressure of the liquid to control the removal of the reflective structure 2' by the length of the particle collision time. In one embodiment, by controlling the particle collision force magnitude and the collision time, the thickness of the reflective structure located above the illuminating body 1 is removed thicker than the thickness of the reflective structure located on the aisle. Therefore, the upper surface 28 of the reflective structure 2'' located on the aisle is higher than the light exiting surface 12 of the illuminating body 1, as shown in Fig. 17B. In one embodiment, the upper surface 28 of the reflective structure 2'' located in the aisle region is substantially coplanar with the light exiting surface of the light-emitting body 1, such that a light-emitting element as in FIG. 13A is formed. In addition, the particles may collide with a plurality of minute relief structures on the surface 28 of the reflective structure 2".
接著,如第17C圖所示,形成光學轉換結構5於發光主體1的出光面12、以及反射結構2''的上表面28之上方。於圖中,不同粒徑大小的波長轉換材料(55' 與55'')係均勻地分佈於光學轉換結構5中,但並不以此為限,大粒徑的顆粒也可以比小粒徑的顆粒形成在更下方的位置,或者小粒徑的顆粒形成在在比大粒徑的顆粒更下方的位置。如第17D圖所示,使用沉降法(sedimentation method),使具有較大粒徑的波長轉換材料55'因具有較大的沉降速率而堆疊於光學轉換結構5的下層,而具有較小粒徑的波長轉換材料55''因具有較小的沉降速率而位於光學轉換結構5的上層,使光學轉換結構5形成大致上可區別(distiquinshable)的第一光學轉換結構5'與第二光學轉換結構5"。待光學轉換結構5完全固化後,進行一拋光製程(polish process),一方面平坦化光學轉換結構5之上表面53,也可進一步調整光學轉換層5的總厚度(T1+T2)。接著,形成擴散層14於光學轉換結構5之上方。隨後,如第17E圖所示,使用刀具切穿擴散層14以及光學轉換結構5,並移除少部分的反射結構2''以形成切割道62。換言之,切割道62使位於不同發光主體1上方的擴散層14以及光學轉換結構5彼此分離。若選用適當寬度的刀具進行切割可以使得發光主體1上方的擴散層14以及光學轉換結構5具有一比發光主體1大的寬度。接著,如第17F圖所示,形成反射結構2'''於切割道62之間,使反射結構2'''的上表面與擴散層14之上表面大體上共平面,形成第一反射結構2。此時,也可進行一拋光製程(polish process),一方面平坦化第一反射結構2與擴散層14之上表面,也可進一步調整發光元件的總厚度。最後,如第17G圖所示,切割位兩相鄰光主體1間之第一反射結構2、第一暫時載具7、及/或承載板13,再使用雷射剝離、加熱分離、溶解、照射紫外光等方式移除第二暫時載具7與乘載板13,形成複數個獨立的發光元件。Next, as shown in Fig. 17C, the optical conversion structure 5 is formed above the light-emitting surface 12 of the light-emitting body 1 and the upper surface 28 of the reflective structure 2". In the figure, the wavelength conversion materials (55' and 55'') of different particle sizes are uniformly distributed in the optical conversion structure 5, but not limited thereto, and the particles of large particle size can also be smaller than the small particle size. The particles are formed at a lower position, or the particles of a small particle size are formed at a position lower than the particles of the large particle size. As shown in Fig. 17D, the wavelength conversion material 55' having a larger particle diameter is stacked on the lower layer of the optical conversion structure 5 with a larger sedimentation rate, and has a smaller particle diameter, as shown in Fig. 17D. The wavelength converting material 55'' is located on the upper layer of the optical conversion structure 5 because of a small sedimentation rate, so that the optical conversion structure 5 forms a substantially dissistantshable first optical conversion structure 5' and a second optical conversion structure. 5". After the optical conversion structure 5 is completely cured, a polishing process is performed to planarize the upper surface 53 of the optical conversion structure 5, and the total thickness of the optical conversion layer 5 (T1+T2) can be further adjusted. Next, a diffusion layer 14 is formed over the optical conversion structure 5. Subsequently, as shown in Fig. 17E, the diffusion layer 14 and the optical conversion structure 5 are cut through using a cutter, and a small portion of the reflective structure 2'' is removed to form The cutting track 62. In other words, the cutting track 62 separates the diffusion layer 14 and the optical conversion structure 5 located above the different light-emitting bodies 1 from each other. The diffusion layer 14 and the optical conversion structure 5 above the light main body 1 have a larger width than the light-emitting body 1. Next, as shown in Fig. 17F, a reflection structure 2"" is formed between the dicing streets 62, so that the reflection structure 2 The upper surface of ''' is substantially coplanar with the upper surface of the diffusion layer 14, forming a first reflective structure 2. At this time, a polishing process may also be performed, on the one hand, the first reflective structure 2 and the diffusion are planarized. The total thickness of the light-emitting elements can be further adjusted on the upper surface of the layer 14. Finally, as shown in Fig. 17G, the first reflective structure 2, the first temporary carrier 7, and/or between the two adjacent optical bodies 1 are cut. Or the carrier plate 13, and then removing the second temporary carrier 7 and the carrier board 13 by means of laser stripping, heating separation, dissolution, irradiation of ultraviolet light, etc., to form a plurality of independent light-emitting elements.
於另一實施例中,發光元件900、1000、或1000'可以包含一第二反射結構(未顯示)位於第一反射結構2的下方,並圍繞導電電極4,更多資訊可以參考第1、10、11圖及其相應說明。再者,發光元件900、1000、或1000'亦可以更具有一光學元件設置於擴散層14上方,可以參考第5圖及其相應說明。發光元件900、1000、或1000'亦可以於導電電極4下方設置延伸電極,可以參考第6圖及其相應說明。In another embodiment, the light emitting element 900, 1000, or 1000' may include a second reflective structure (not shown) located below the first reflective structure 2 and surrounding the conductive electrode 4. For more information, refer to the first. 10, 11 map and its corresponding description. Furthermore, the light-emitting element 900, 1000, or 1000' may have an optical element disposed above the diffusion layer 14, as described in FIG. 5 and its corresponding description. The light-emitting element 900, 1000, or 1000' may also be provided with an extension electrode under the conductive electrode 4, and reference may be made to FIG. 6 and its corresponding description.
需了解的是,本發明中上述之諸多實施例在適當的情況下,是可以彼此互相組合或替換,而非僅限於所描述之特定實施例。本發明所列舉之各實施例僅用以說明本發明,並非用以限制本發明之範圍。任何人對本發明所作之任何顯而易見之修飾或變更接不脫離本發明之精神與範圍。It is to be understood that the various embodiments described above may be combined or substituted with each other as appropriate, and are not limited to the specific embodiments described. The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any obvious modifications or variations of the present invention are possible without departing from the spirit and scope of the invention.
1‧‧‧發光主體
2‧‧‧第一反射結構
11、51、64、141‧‧‧側表面
12‧‧‧出光面
13‧‧‧承載板
21、43、52、63、142‧‧‧下表面
22、53、61、143‧‧‧上表面
23、23'、23"、251、261‧‧‧內表面
24、33‧‧‧外表面
25、231‧‧‧第一部分
26、232‧‧‧第二部分
27、233‧‧‧第三部分
234、2711‧‧‧一端
14‧‧‧擴散層
3‧‧‧第二反射結構
31‧‧‧第一部分
32‧‧‧第二部分
4‧‧‧導電電極
41‧‧‧上方部
42‧‧‧下方部
5‧‧‧光學轉換結構
521‧‧‧第一下表面
522‧‧‧第二下表面
55'‧‧‧第一波長轉換材料
55''‧‧‧第二波長轉換材料
57、57'‧‧‧斜面
6‧‧‧透明封裝結構
54、62‧‧‧切割道
6'‧‧‧次透明封裝結構
2'、2''‧‧‧反射結構
5'‧‧‧第一光學轉換結構
5''‧‧‧第二光學轉換結構
7'‧‧‧第四暫時載具
7‧‧‧第一暫時載具
8‧‧‧第二暫時載具
9‧‧‧光學元件
101‧‧‧外側邊
10‧‧‧延伸電極
271‧‧‧斜邊
4001‧‧‧最外側邊
100、100'、200、300、400、500、600、600'、600"、700、800‧‧‧發光元件
900、1000、1000'‧‧‧發光元件
W1、W2、W3、W4、W5、W6、W7、W8、W9‧‧‧寬度
H1、H2、H3‧‧‧高度
θ、θ'‧‧‧傾斜角
T1、T2、T3‧‧‧厚度
T‧‧‧總高度
D、L‧‧‧距離
Rp‧‧‧波峰
Rv‧‧‧波谷
S1、S2、SN‧‧‧樣本長度
RL、RL1、RL2‧‧‧基準線1‧‧‧Lighting subject
2‧‧‧First reflection structure
11, 51, 64, 141‧‧‧ side surfaces
12‧‧‧Glossy
13‧‧‧Loading board
21, 43, 52, 63, 142‧‧‧ lower surface
22, 53, 61, 143‧‧‧ upper surface
23, 23', 23", 251, 261‧ ‧ inner surface
24, 33‧‧‧ outer surface
25, 231‧‧‧ first part
26, 232‧‧‧ Part II
27, 233‧‧‧ third part
234, 2711‧‧‧ one end
14‧‧‧Diffusion layer
3‧‧‧Second reflective structure
31‧‧‧The first part
32‧‧‧Part II
4‧‧‧Conductive electrode
41‧‧‧ upper part
42‧‧‧ lower part
5‧‧‧Optical conversion structure
521‧‧‧First lower surface
522‧‧‧Second lower surface
55'‧‧‧First wavelength conversion material
55''‧‧‧ Second wavelength conversion material
57, 57'‧‧‧ Bevel
6‧‧‧Transparent package structure
54, 62‧‧ ‧ cutting road
6'‧‧‧ times transparent package structure
2', 2''‧‧‧ reflection structure
5'‧‧‧First optical conversion structure
5''‧‧‧Second optical conversion structure
7'‧‧‧fourth temporary vehicle
7‧‧‧ First temporary vehicle
8‧‧‧Second temporary vehicle
9‧‧‧Optical components
101‧‧‧ outside side
10‧‧‧Extended electrode
271‧‧‧ oblique sides
4001‧‧‧ outermost side
100, 100', 200, 300, 400, 500, 600, 600', 600", 700, 800‧‧‧ light-emitting elements
900, 1000, 1000'‧‧‧Lighting elements
W1, W2, W3, W4, W5, W6, W7, W8, W9‧‧ Width
H1, H2, H3‧‧‧ height θ, θ'‧‧‧ tilt angle
T1, T2, T3‧‧‧ thickness
T‧‧‧ total height
D, L‧‧‧ distance
Rp‧‧·Crest
Rv‧‧‧ trough
S 1 , S 2 , S N ‧‧‧ sample length
R L , R L1 , R L2 ‧‧‧ baseline
第1A圖為依據本發明一實施例之一發光元件之剖面示意圖。1A is a schematic cross-sectional view showing a light-emitting element according to an embodiment of the present invention.
第1B圖為依據本發明一實施例之一發光元件之下視圖。Fig. 1B is a bottom view of a light-emitting element according to an embodiment of the present invention.
第1C圖為依據本發明另一實施例之一發光元件之剖面示意圖。1C is a schematic cross-sectional view showing a light-emitting element according to another embodiment of the present invention.
第2A~2G圖為依據本發明一實施例之一發光元件之製作流程示意圖。2A to 2G are schematic views showing a manufacturing process of a light-emitting element according to an embodiment of the present invention.
第3A~3I圖為依據本發明一實施例之發光元件之另一製作流程示意圖。3A to 3I are schematic views showing another manufacturing process of a light-emitting element according to an embodiment of the present invention.
第4圖為依據本發明另一實施例之一發光元件之剖面示意圖。Fig. 4 is a schematic cross-sectional view showing a light-emitting element according to another embodiment of the present invention.
第5圖為依據本發明另一實施例之一發光元件之剖面示意圖。Figure 5 is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention.
第6圖為依據本發明另一實施例之一發光元件之剖面示意圖。Figure 6 is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention.
第7圖為依據本發明另一實施例之一發光元件之剖面示意圖。Figure 7 is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention.
第8A圖為依據本發明另一實施例之一發光元件之剖面示意圖。Figure 8A is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention.
第8B圖為依據本發明另一實施例之一發光元件之剖面示意圖。Figure 8B is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention.
第8C圖為依據本發明另一實施例之一發光元件之剖面示意圖。Figure 8C is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention.
第9A~9G圖為依據本發明又一實施例之一發光元件之製作流程示意圖。9A to 9G are schematic views showing a manufacturing process of a light-emitting element according to still another embodiment of the present invention.
第10圖為依據本發明另一實施例之一發光元件之剖面示意圖。Figure 10 is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention.
第11圖為依據本發明另一實施例之一發光元件之剖面示意圖。Figure 11 is a cross-sectional view showing a light-emitting element according to another embodiment of the present invention.
第12A~12I圖為依據本發明另一實施例之一發光元件之製作流程示意圖。12A to 12I are schematic diagrams showing a manufacturing process of a light-emitting element according to another embodiment of the present invention.
第13A圖為依據本發明一實施例之一發光元件之剖面示意圖。Figure 13A is a cross-sectional view showing a light-emitting element according to an embodiment of the present invention.
第13B圖為依據本發明一實施例之一發光元件之上視圖。Figure 13B is a top plan view of a light-emitting element in accordance with an embodiment of the present invention.
第14圖例示一個粗糙表面的剖面圖。Figure 14 illustrates a cross-sectional view of a rough surface.
第15A圖為依據本發明一實施例之一發光元件之剖面示意圖。15A is a cross-sectional view showing a light-emitting element according to an embodiment of the present invention.
第15B圖為依據本發明一實施例之一發光元件之局部放大圖。Figure 15B is a partial enlarged view of a light-emitting element according to an embodiment of the present invention.
第16A圖為依據本發明一實施例之一發光元件之剖面示意圖。Figure 16A is a cross-sectional view showing a light-emitting element according to an embodiment of the present invention.
第16B圖為依據本發明一實施例之一發光元件之局部放大圖。Figure 16B is a partial enlarged view of a light-emitting element according to an embodiment of the present invention.
第17A~17H圖為依據本發明另一實施例之一發光元件之製作流程示意圖。17A to 17H are schematic views showing a manufacturing process of a light-emitting element according to another embodiment of the present invention.
1‧‧‧發光主體 1‧‧‧Lighting subject
2‧‧‧第一反射結構 2‧‧‧First reflection structure
12‧‧‧出光面 12‧‧‧Glossy
22‧‧‧上表面 22‧‧‧ upper surface
21‧‧‧下表面 21‧‧‧ Lower surface
23‧‧‧內表面 23‧‧‧ inner surface
24‧‧‧外表面 24‧‧‧ outer surface
3‧‧‧第二反射結構 3‧‧‧Second reflective structure
31‧‧‧第一部分 31‧‧‧The first part
32‧‧‧第二部分 32‧‧‧Part II
33‧‧‧外表面 33‧‧‧ outer surface
4‧‧‧導電電極 4‧‧‧Conductive electrode
41‧‧‧上方部 41‧‧‧ upper part
42‧‧‧上方部 42‧‧‧ upper part
43‧‧‧下表面 43‧‧‧ lower surface
5‧‧‧光學轉換結構 5‧‧‧Optical conversion structure
51‧‧‧側表面 51‧‧‧ side surface
52‧‧‧下表面 52‧‧‧ lower surface
6‧‧‧透明封裝結構 6‧‧‧Transparent package structure
61‧‧‧上表面 61‧‧‧ upper surface
100‧‧‧發光元件 100‧‧‧Lighting elements
θ‧‧‧傾斜角 θ‧‧‧Tilt angle
W1、W2、W3、W4、W5‧‧‧寬度 W1, W2, W3, W4, W5‧‧‧ width
H1、H2、H3‧‧‧高度 H1, H2, H3‧‧‧ height
T‧‧‧總高度 T‧‧‧ total height
D、L‧‧‧距離 D, L‧‧‧ distance
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/442,063 US10825970B2 (en) | 2016-02-26 | 2017-02-24 | Light-emitting device with wavelength conversion structure |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105105767 | 2016-02-26 | ||
| TW105105767 | 2016-02-26 |
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| Publication Number | Publication Date |
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| TW201731129A true TW201731129A (en) | 2017-09-01 |
| TWI788280B TWI788280B (en) | 2023-01-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| TW106105686A TWI788280B (en) | 2016-02-26 | 2017-02-21 | Light-emitting device |
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| Country | Link |
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| TW (1) | TWI788280B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11960684B2 (en) | 2022-07-20 | 2024-04-16 | Chicony Power Technology Co., Ltd. | Light-emitting touch panel |
| TWI846292B (en) * | 2022-07-20 | 2024-06-21 | 群光電能科技股份有限公司 | Light-emitting touch panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8556672B2 (en) * | 2010-01-29 | 2013-10-15 | Citizen Electronics Co., Ltd. | Method of producing light-emitting device and light-emitting device |
| TWI436506B (en) * | 2011-04-20 | 2014-05-01 | Lustrous Green Technology Of Lighting | LED package structure using prefabricated fluorescent cap |
| US9269873B2 (en) * | 2012-03-13 | 2016-02-23 | Citizen Holdings Co., Ltd. | Semiconductor light emitting device and method for manufacturing same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11960684B2 (en) | 2022-07-20 | 2024-04-16 | Chicony Power Technology Co., Ltd. | Light-emitting touch panel |
| TWI846292B (en) * | 2022-07-20 | 2024-06-21 | 群光電能科技股份有限公司 | Light-emitting touch panel |
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| TWI788280B (en) | 2023-01-01 |
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