TW201738998A - Bainuoli base device and deposition equipment - Google Patents

Abstract

The invention provides a white Nuoli base device and a deposition device, wherein a gas hole is arranged on the surface of the base, and a gas pipeline is provided in the base, and the gas pipeline supplies a gas with a predetermined pressure to the air hole, and the wafer is placed on the surface of the base. The gas ejected through the pores, the wafer is adsorbed on the surface of the susceptor by means of the principle of quinolism, but is kept at a predetermined distance from the susceptor, so that the wafer is completely out of contact with the susceptor, and since the wafer is close to the pedestal, The distance is uniform, the heat radiation of the susceptor to the wafer is more uniform, and the wafer is prevented from slipping and dislocation, thereby improving the performance of the wafer.

Description

Bainuoli base device and deposition equipment

The present invention relates to the field of semiconductor manufacturing, and in particular to a whiteur base device and a deposition apparatus.

During the epitaxial layer growth process, wafer slip dislocation becomes an important defect affecting wafer performance. Slip misalignment greatly degrades device performance on the wafer.

As shown in the first figure, in the prior art, in order to solve the above problem of slip misalignment, a groove is usually designed in the susceptor 1 of the reaction device, and when the wafer 2 is placed on the susceptor 1, the wafer 2 Only part of the contact with the susceptor 1 is left open, and most of the center is suspended. As shown in FIG. 1 , the wafer 2 is prevented from contacting the susceptor 1 in a large area, and the contamination on the susceptor 1 is reduced to cause contamination on the wafer 2 . Thereby, the performance of the formation of the wafer 2 can be ensured. Since the temperature on the susceptor 1 heats the wafer 2 in a radial manner, after the groove is formed, the surface of the wafer 2 is recessed close to the surface of the susceptor 1 due to stress, which causes temperature radiation on the wafer 2. In the central region, the wafer 2 is unevenly heated, and the uneven heating causes the slippage to become more and more serious. Therefore, how to solve the slip misalignment becomes a technical problem that those skilled in the art urgently need to solve.

The object of the present invention is to provide a white Nuoli base device and a deposition device, which can The wafer can be completely out of contact with the susceptor, which can avoid contamination of the wafer by contaminants on the pedestal, and can ensure uniform heating of the wafer and reduce the occurrence of slip misalignment.

In order to achieve the above object, the present invention provides a white Nuoli base device comprising: a base having a plurality of air holes on one end surface and a center shaft at the other end; and a gas line disposed in the central axis And passing through the susceptor and connecting the air holes to supply a gas of a predetermined pressure to the gas.

Further, in the white Nuuli base device, the air holes are evenly distributed on the surface of the base.

Further, in the white Nuoli base device, the air hole is divided into an inner ring air hole and an outer ring air hole, the inner ring air hole is close to a central area of the base, and the outer ring air hole is close to An edge region of the base.

Further, in the white Nuoli base device, the gas pipeline is a pipeline for supplying gas to the inner ring vent and the outer ring vent.

Further, in the white Nuoli base device, the gas supplied by the gas pipeline is hydrogen (H ₂ ).

In another aspect of the invention there is also provided a deposition apparatus comprising a SNuni base apparatus as described above; and a reaction chamber in which the nunelly susceptor apparatus is mounted, The wafer is adsorbed on the surface of the Celino base device by the Bernoulli principle.

Further, in the deposition apparatus, the pores in the Celino base device are evenly distributed on the surface of the base.

Further, in the deposition apparatus, the air hole is divided into an inner ring air hole and an outer ring air hole, the inner ring air hole is close to a central area of the base, and the outer ring air hole is Near the edge region of the pedestal.

Further, in the deposition apparatus, the gas line in the Cenuloli base device is a pipe for supplying gas to the inner ring vent and the outer ring vent.

Further, in the deposition apparatus, the gas supplied from the gas line in the Celino base device is hydrogen (H ₂ ).

Further, in the deposition apparatus, the gas pressure provided by the gas line in the Celino base device can be adjusted.

Compared with the prior art, the beneficial effects of the present invention are mainly embodied in: providing a vent hole on the surface of the pedestal, and providing a gas pipeline in the susceptor, the gas pipeline providing a gas with a predetermined pressure for the ventilating hole, when the wafer is placed on the surface of the pedestal The gas ejected through the pores, the wafer is adsorbed on the surface of the susceptor by means of the principle of quinolism, but is kept at a predetermined distance from the susceptor, so that the wafer is completely out of contact with the susceptor, and since the wafer is close to the pedestal, The distance is uniform, the heat radiation of the susceptor to the wafer is more uniform, and the wafer is prevented from slipping and dislocation, thereby improving the performance of the wafer.

Prior art:

1‧‧‧Base

2‧‧‧ wafer

this invention:

10‧‧‧ Pedestal

21‧‧‧ inner ring vent

22‧‧‧ outer ring vent

30‧‧‧Axis

40‧‧‧ gas pipeline

1 is a schematic view of a base structure in the prior art; FIG. 2 is a plan view of a white Nuoli base device according to an embodiment of the present invention; and FIG. 3 is a cross-sectional view taken along line AA of FIG.

The Bernoulli pedestal apparatus and deposition apparatus of the present invention will now be described in more detail with reference to the accompanying drawings, in which a preferred embodiment of the invention is illustrated, and it is understood that Advantageous effects of the present invention. Therefore, the following description should be understood as widely known to those skilled in the art and not as Limitations of the invention.

In the interest of clarity, not all features of the actual embodiments are described. In the following description, well-known functions and structures are not described in detail, as they may obscure the invention in unnecessary detail. It should be understood that in the development of any actual embodiment, a large number of implementation details must be made to achieve a particular goal of the developer, such as changing from one embodiment to another in accordance with the limitations of the system or related business. Additionally, such development work should be considered complex and time consuming, but is only routine work for those skilled in the art.

The invention is more specifically described in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the description and appended claims. It should be noted that the drawings are in a very simplified form and both use non-precise proportions, and are only for convenience and clarity to assist the purpose of the embodiments of the present invention.

Referring to FIG. 2 to FIG. 3, in the present embodiment, a white Nuoli base device is provided, comprising: a base 10 having a plurality of air holes on one end surface and a center shaft 30 at the other end thereof; A gas line 40 is disposed in the central shaft 30 and penetrates the base 10 and connects the air holes to supply a gas of a predetermined pressure to the gas.

Specifically, as shown in FIG. 2, the pores are evenly distributed on the surface of the susceptor 10, and evenly distributed on the surface of the susceptor 10, the subsequent adsorption force for the wafer is more uniform, ensuring that the wafer can be very Good is adsorbed near the surface of the susceptor 10.

In this embodiment, the air hole is divided into an inner ring air hole 21 and an outer ring air hole 22, the inner ring air hole 21 is close to a central area of the base 10, and the outer ring air hole 22 is close to the base. The edge area of 10. Specifically, the number of the inner ring air holes 21 and the outer ring air holes 22 may be different, and the installation position may also be selected according to different requirements, which is not limited herein.

In the present embodiment, the gas line is a single line, and gas is supplied to the inner ring vent 21 and the outer ring vent 22, as shown in FIG. A gas line 40 makes the structure of the base 10 simpler and easier to install for later maintenance. In addition, a gas line 40 communicates with the gas pressure provided by the inner ring vent 21 and the outer ring vent 22, so that the wafer can be uniformly absorbed by the whole body to ensure that the wafer does not shift.

In this embodiment, the gas provided by the gas pipeline is hydrogen (H ₂ ), which can avoid the pollution of other gases caused by the formation of defects on the surface of the wafer.

In another aspect of the embodiment, there is also provided a deposition apparatus comprising a nunelly susceptor apparatus and a reaction chamber as described above, the nunelly susceptor apparatus being installed in the reaction chamber, crystal The circle is adsorbed on the surface of the Celino base device by the principle of the Cannoni.

In the present embodiment, the gas line 40 is provided to adjust the gas pressure according to different requirements. In this embodiment, the wafer is adsorbed on the pedestal by the principle of the nunoulli, and the predetermined distance is maintained from the pedestal, which can well prevent the susceptor from contaminating the wafer, and can also heat the susceptor to the wafer. Radiation is more uniform, avoiding wafer slippage and misalignment, and improving wafer performance.

In summary, in the white Nuoli base device and the deposition device provided by the embodiments of the present invention, a gas hole is disposed on the surface of the base, and a gas pipeline is disposed in the base, and the gas pipeline supplies a gas with a predetermined pressure to the air hole, and is a crystal. The wafer is placed on the surface of the pedestal, and the gas ejected through the vent hole, the wafer is adsorbed on the surface of the pedestal by means of the Bernoulli principle, but is kept at a predetermined distance from the susceptor, so that the wafer is completely out of contact with the susceptor, and The circle is close to the pedestal and the distance is uniform, and the heat radiation of the susceptor to the wafer is more uniform, which avoids slippage and dislocation of the wafer and improves the performance of the wafer.

The above is only a preferred embodiment of the present invention and does not impose any limitation on the present invention. Any person skilled in the art without departing from the technical solution of the present invention In the scope of the present invention, the scope of the present invention is not limited by the scope of the present invention.

10‧‧‧ Pedestal

21‧‧‧ inner ring vent

22‧‧‧ outer ring vent

30‧‧‧Axis

40‧‧‧ gas pipeline

Claims (11)

A white Nuoli base device comprises: a base having a plurality of air holes on one end surface and a central shaft at the other end; a gas pipeline disposed in the central shaft and extending through the base and connected The air hole supplies a gas of a predetermined pressure to the gas. The Cannoni base device of claim 1, wherein the pores are evenly distributed on a surface of the base. The Bainuoli base device according to claim 2, wherein the air hole is divided into an inner ring air hole and an outer ring air hole, the inner ring air hole is close to a central area of the base, and the outer ring air hole is close to An edge region of the base. The white Nuoli base device of claim 3, wherein the gas line is a line for supplying gas to the inner ring vent and the outer ring vent. The Bainuoli base device of claim 1, wherein the gas supplied by the gas line is hydrogen (H ₂ ). A deposition apparatus comprising: a SNuni base device as claimed in claim 1; and a reaction chamber in which the nunelino pedestal device is installed, and the wafer passes the principle of Bernoulli Adsorbed on the surface of the CNNili base device. The deposition apparatus of claim 6, wherein the pores in the nunelly susceptor device are uniformly distributed on a surface of the susceptor. The deposition apparatus of claim 7, wherein the air hole is divided into an inner ring air hole and an outer ring air a hole, the inner ring air hole is adjacent to a central area of the base, and the outer ring air hole is adjacent to an edge area of the base. A deposition apparatus according to claim 8, wherein the gas line in the Celino base device is a line for supplying gas to the inner ring vent and the outer ring vent. A deposition apparatus according to claim 6, wherein the gas supplied from the gas line in the Celino base device is hydrogen (H ₂ ). The deposition apparatus of claim 6, wherein the gas pressure provided by the gas line in the Celino base device is adjustable.