TW201736900A - Wafer defect inspection and review systems - Google Patents
Wafer defect inspection and review systems Download PDFInfo
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- TW201736900A TW201736900A TW106103685A TW106103685A TW201736900A TW 201736900 A TW201736900 A TW 201736900A TW 106103685 A TW106103685 A TW 106103685A TW 106103685 A TW106103685 A TW 106103685A TW 201736900 A TW201736900 A TW 201736900A
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- 238000007689 inspection Methods 0.000 title claims abstract description 31
- 230000007547 defect Effects 0.000 title description 4
- 238000003384 imaging method Methods 0.000 claims abstract description 42
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 4
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- 229910052902 vermiculite Inorganic materials 0.000 claims description 4
- 235000019354 vermiculite Nutrition 0.000 claims description 4
- 239000010455 vermiculite Substances 0.000 claims description 4
- 230000008901 benefit Effects 0.000 description 66
- 239000000758 substrate Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0836—Catadioptric systems using more than three curved mirrors
- G02B17/0844—Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0836—Catadioptric systems using more than three curved mirrors
- G02B17/0848—Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Lenses (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
本發明大體上係關於檢查之領域，且特定言之係關於半導體器件之檢查。The present invention relates generally to the field of inspection, and in particular to inspection of semiconductor devices.
薄拋光板(諸如矽晶圓及類似者)係現代技術之一非常重要部分。例如，一晶圓可意指用於製造積體電路及其他器件之半導體材料之一薄片。薄拋光板之其他實例可包含磁碟基板、塊規及類似者。儘管此處所描述之技術主要意指晶圓，然應瞭解，本技術亦適用於其他類型之拋光板。術語晶圓及術語薄拋光板在本發明中可互換使用。 晶圓經受缺陷檢查。預期利用以執行此等檢查之工具係高效且有效。然而，應注意，在大規模電路整合及大小縮減的最近發展已挑戰該期望。即，隨著缺陷變得越來越小，既有檢查工具在偵測缺陷時變得較不高效及較不有效。 就此而言，需要不具有前述缺點之改良檢查系統。Thin polishing plates, such as silicon wafers and the like, are a very important part of modern technology. For example, a wafer can mean a sheet of semiconductor material used to fabricate integrated circuits and other devices. Other examples of thin polishing plates may include disk substrates, block gauges, and the like. Although the techniques described herein primarily refer to wafers, it should be understood that the present technology is also applicable to other types of polishing plates. The term wafer and the term thin polishing plate are used interchangeably in the present invention. The wafer is subjected to a defect inspection. The tools that are expected to be utilized to perform such inspections are efficient and effective. However, it should be noted that recent developments in large-scale circuit integration and size reduction have challenged this expectation. That is, as defects become smaller and smaller, both inspection tools become less efficient and less effective in detecting defects. In this regard, there is a need for an improved inspection system that does not have the aforementioned disadvantages.
本發明係關於一種成像物鏡。該成像物鏡可包含一前物鏡，該前物鏡經組態以產生一中間影像。該成像物鏡亦可包含一中繼器，該中繼器經組態以接收由該前物鏡產生之該中間影像。該中繼器可包含三個球形鏡，該等球形鏡經定位以將該中間影像之一投影傳遞至一固定影像平面。 本發明之一進一步實施例係關於一種檢查系統。該檢查系統可包含一偵測器，該偵測器係定位於該檢查系統內之一固定位置。該檢查系統亦可包含一前物鏡，該前物鏡經組態以產生一受繞射限制中間影像。該檢查系統可進一步包含一中繼器，該中繼器經組態以接收由該前物鏡產生之該中間影像。該中繼器可包含三個球形鏡，該等球形鏡經定位以將該中間影像之一投影傳遞至經定位於該固定位置之該偵測器。 本發明之一額外實施例係關於一種成像物鏡。該成像物鏡可包含一前物鏡，該前物鏡經組態以產生一受繞射限制中間影像。該成像物鏡亦可包含一中繼器，該中繼器經組態以接收由該前物鏡產生之該中間影像。該中繼器可包含三個球形鏡，該等球形鏡經定位以將該中間影像之一投影傳遞至一固定影像平面。該等三個球形鏡可均係實質上不遮光之反射鏡，且可經組態以相對於彼此具有不同曲率。 應瞭解，前述大體描述及下文詳細描述兩者皆僅係例示性及闡釋性，且未必限制本發明。併入本說明書中且構成本說明書之一部分之附圖繪示本發明之標的。該等描述及圖式一起用以解釋本發明之原理。The present invention relates to an imaging objective. The imaging objective can include a front objective configured to produce an intermediate image. The imaging objective can also include a repeater configured to receive the intermediate image produced by the front objective. The repeater can include three spherical mirrors that are positioned to transmit one of the intermediate images to a fixed image plane. A further embodiment of the invention relates to an inspection system. The inspection system can include a detector positioned in a fixed position within the inspection system. The inspection system can also include a front objective that is configured to produce a diffraction limited intermediate image. The inspection system can further include a repeater configured to receive the intermediate image produced by the front objective. The repeater can include three spherical mirrors that are positioned to transmit one of the intermediate images to the detector positioned at the fixed position. An additional embodiment of the invention relates to an imaging objective. The imaging objective can include a front objective configured to produce a diffraction limited intermediate image. The imaging objective can also include a repeater configured to receive the intermediate image produced by the front objective. The repeater can include three spherical mirrors that are positioned to transmit one of the intermediate images to a fixed image plane. The three spherical mirrors may each be a mirror that is substantially unobstructed and may be configured to have different curvatures relative to each other. It is to be understood that both the foregoing general description and The accompanying drawings, which are incorporated in the specification, are in The description and drawings together serve to explain the principles of the invention.
相關申請案之交叉参考 本申請案根據35U.S.C.§119(e)規定主張2016年2月3日申請之美國臨時申請案第62/290,586號之權利。該美國臨時申請案第62/290,586號之全文以引用之方式併入本文中。 本申請案係關於2016年2月26日申請之同在申請中之美國專利申請案第15/055,292號。該美國專利申請案第15/055,292號之全文以引用之方式併入本文中。 現將詳細參考所揭示之標的，該標的繪示於附圖中。 根據本發明之實施例係關於成像物鏡及配備有此等成像物鏡之檢查系統。根據本發明組態之一成像物鏡可以一完美(例如，受繞射限制)或不完美中間影像及一個三全反射鏡中繼器為特徵。以此方式組態之一成像物鏡可充當在美國專利案第6,894,834號(其之全文以引用之方式併入本文中)中描述之成像物鏡之一替代。應注意，在美國專利案第6,894,834號中描述之成像物鏡在一中間影像平面處不提供受繞射限制效能，使得其不可用於共焦應用。可預期根據本發明之實施例組態之成像物鏡可被用作用於未來寬頻帶成像物鏡之一基線設計。 大體上參考圖1，展示描繪根據本發明之一實施例組態之一檢查系統100之一方塊圖。檢查系統100可包含一照明源102、一照明鏡(或一透鏡系統)104、一目標基板106、一基板固持器107、一成像物鏡108、一感測器(偵測器)110，及一資料處理器112。 照明源102可包含(例如)一雷射誘導電漿源，該雷射誘導電漿源可輸出一光束122。照明鏡104可反射且引導光束122，使得朝向目標基板106可提供一入射光束124。可接著藉由可控制地平移基板固持器107而在光束124下掃描目標基板106(例如，一晶圓)，使得檢查系統100的視場(FOV)可覆蓋待檢查之基板上的區域。因此，可將輸出光126自目標基板106反射至成像物鏡108，成像物鏡108可接著將輸出光之一投影128輸出至感測器110上。 感測器110可包含一或多個電荷耦合器件(CCD)、CCD陣列、時間延遲積分(TDI)感測器、TDI感測器陣列、光倍增管(PMT)以及各種其他類型之光學感測器件。可將藉由感測器110捕捉之信號提供至資料處理器112以用於額外處理。在一些實施例中，資料處理器112可經組態以分析所感測光束之強度、相位及/或其他特性。資料處理器112亦可經組態以將分析結果提供至一或多個系統或使用者。 現參考圖2至4，展示描繪根據本發明組態之一成像物鏡108之一例示性實施方案之示意圖。成像物鏡108可包含一前物鏡130及一中繼器(其亦可充當一變焦光學器件，且可因此被稱作一變焦中繼器)132。在一些實施例中，前物鏡130係放置於如圖3中展示之中間影像前面且具有包含以下各者之一物鏡頭部：(1)一平凸透鏡130A，其具有亦充當反射表面之平面側；(2)一凹凸透鏡130B；及(3)一凹面鏡130C；以及一系列折射融合矽石及氟化鈣透鏡。 可預期在不脫離本發明之精神及範疇的情況下，前物鏡130可係不同於圖2至4中描繪之組態來組態。可預期儘管前物鏡130之特定實施方案可變化，然其仍可經調整(最優化)以在中間影像處提供受繞射限制效能(例如，具有0.9或更好之一Strehl比，且在一些實施例中，具有0.5或更好之一Strehl比)。中間影像可接著由一相當大之值(例如，50X)放大，使得在中間影像平面處之數值孔徑(NA)減小至一相對較小值(例如，0.2或更小)。可預期更小的NA藉由最優化在中間影像處之受繞射限制效能，而使達成該效能成為可能。在係中間影像平面之介面處之更小的NA亦使得前物鏡130及變焦中繼器132之耦合相對容易，使得可獨立設計前物鏡130及變焦中繼器132，而在中間影像處之介面可係遠心的。此外，應注意因為在介面處之NA小，變焦中繼器132及前物鏡130之對準容限相對鬆散，其可繼而容許以具成本效益之方式來設計及製造成像物鏡108。 在一些實施例中，較佳的係具有遠心中間影像，使得由變焦中繼器132引入之像差可被最小化。在中間影像無法係遠心之情況中，可考慮瞳孔位置之適當匹配，使得藉由變焦中繼器132引入之像差可被最優化。圖4係詳細繪示一例示性變焦中繼器132之一描繪。 如圖4中所展示，變焦中繼器132可包含三個(部分)球形鏡132A、132B及132C，其等可皆軸向及垂直(例如，以Y及Z方向)移動以維持一固定影像平面140。應注意，維持一固定影像平面140容許感測器110保持於一固定位置，其可由於各種原因被瞭解。亦應注意在一些實施例中，變焦中繼器132之鏡132A、132B及132C可均係不遮光之反射鏡。應注意遮光被消除係因為遮光可減小低至中頻率信號回應。 在一些實施例中，變焦中繼器132之鏡132A、132B及132C經組態具有不同曲率。應注意藉由以此方式組態變焦中繼器132，在影像路徑中產生相對於中間影像之一共軛影像平面。若將場光闌放置於自動校正像差之照明路徑中之共軛影像平面處，則不需要最優化自場光闌至晶圓共軛之照明。換言之，照明路徑設計現自動完成。 在一些實施例中，中繼器經設計以覆蓋一2X變焦範圍。若期望一大變焦範圍，則變焦範圍可被劃分為多個子變焦總成，其中各子變焦總成實施具有在該子變焦範圍內校正之像差之一個三鏡變焦中繼器132。此等變焦總成132可經組態為可切換且可一起利用以達到一更大變焦範圍。應注意由於用於中繼器之NA相對較小(如先前所描述)，變焦總成之傾斜及放置容限可相對鬆散，此使得可替換變焦可行。圖5係描繪如本文描述之重疊之多個子變焦總成之一示意圖。應注意，由於全反射設計，以此方式組態之鏡中繼器將能夠自動校正色像差。 如將自上文瞭解，根據本發明組態之成像物鏡可提供完美(受繞射限制)中間影像，從而使得有可能提供用於共焦應用之實施方案。受繞射限制亦意謂著指派至像差之邊限可因此減小，從而容許配備有根據本發明組態之成像物鏡之檢查系統在減小透鏡加熱及雜散光之情況下更高效。應注意，由於在中間影像處之NA相對較小，故整合容限相對較鬆散，從而容許獨立設計及測試變焦中繼器及前物鏡。此外，由於變焦中繼器經組態以利用經組態具有最小散射之全部鏡，故可減小取決於散射之雜散光(其係全反射中繼器設計之一額外優點)。此外，由於實施變焦中繼器所需要之鏡之數目減小，因此可顯著減小根據本發明組態之成像物鏡之製造成本(例如，相較於折射融合矽石及氟化鈣透鏡，低NA球形鏡之成本非常低)，從而提供可由於各種原因被瞭解之一特徵。 應瞭解，儘管上文之實例將晶圓稱為目標基板，然此等參考僅係例示性的且不意謂受限制。可預期在不脫離本發明之精神及範疇之情況下，成像物鏡及配備有根據本發明組態之成像物鏡之檢查系統亦可適用於其他類型之拋光板。用於本發明中之術語晶圓可包含用於製造積體電路及其他器件之半導體材料之一薄片，以及其他薄拋光板(諸如，磁碟基板、塊規及類似者)。 亦可瞭解，為繪示之目的，圖中描繪之各種方塊分開呈現。可預期，儘管圖中描繪之各種方塊可實施為單獨(及通信地耦合)器件及/或處理單元，然在不脫離本發明之精神及範疇之情況下，其等亦可整合在一起。 據信，藉由前述描述將瞭解本發明之系統及設備及其之許多隨附優點，且應明白在不脫離所揭示之標的或不犧牲所有其材料優點之情況下可對組件之形式、構造及配置作出各種改變。所描述形式僅係說明性。CROSS REFERENCE TO RELATED APPLICATIONS This application claims the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of The entire disclosure of U.S. Provisional Application Serial No. 62/290,586 is incorporated herein by reference. This application is related to U.S. Patent Application Serial No. 15/055,292, filed on Feb. 26, 2016. The entire disclosure of U.S. Patent Application Serial No. 15/055,292 is incorporated herein by reference. Reference will now be made in detail to the claims herein Embodiments in accordance with the present invention relate to imaging objectives and inspection systems equipped with such imaging objectives. An imaging objective configured in accordance with the present invention can be characterized by a perfect (e.g., diffraction limited) or imperfect intermediate image and a triple total mirror repeater. One of the imaging objective lenses described in the U.S. Patent No. 6,894,834, the entire disclosure of which is incorporated herein by reference. It is to be noted that the imaging objective described in U.S. Patent No. 6,894,834 does not provide diffraction-limiting performance at an intermediate image plane, making it unusable for confocal applications. It is contemplated that an imaging objective configured in accordance with embodiments of the present invention can be used as a baseline design for future broadband imaging objectives. Referring generally to Figure 1, a block diagram depicting one of the inspection systems 100 configured in accordance with one embodiment of the present invention is shown. The inspection system 100 can include an illumination source 102, an illumination mirror (or a lens system) 104, a target substrate 106, a substrate holder 107, an imaging objective 108, a sensor (detector) 110, and a Data processor 112. Illumination source 102 can include, for example, a laser induced plasma source that can output a beam 122. The illumination mirror 104 can reflect and direct the beam 122 such that an incident beam 124 can be provided toward the target substrate 106. The target substrate 106 (e.g., a wafer) can then be scanned under the beam 124 by controllably translating the substrate holder 107 such that the field of view (FOV) of the inspection system 100 can cover the area on the substrate to be inspected. Accordingly, output light 126 can be reflected from target substrate 106 to imaging objective 108, which can then output one of the output light projections 128 onto sensor 110. The sensor 110 can include one or more charge coupled devices (CCDs), CCD arrays, time delay integration (TDI) sensors, TDI sensor arrays, photomultiplier tubes (PMTs), and various other types of optical sensing. Device. Signals captured by sensor 110 may be provided to data processor 112 for additional processing. In some embodiments, data processor 112 can be configured to analyze the intensity, phase, and/or other characteristics of the sensed beam. The data processor 112 can also be configured to provide analysis results to one or more systems or users. Referring now to Figures 2 through 4, there is shown a schematic diagram depicting one exemplary embodiment of an imaging objective 108 configured in accordance with the present invention. Imaging objective 108 can include a front objective 130 and a repeater (which can also function as a zoom optic and can therefore be referred to as a zoom repeater) 132. In some embodiments, the front objective lens 130 is placed in front of the intermediate image as shown in FIG. 3 and has one of the following lens portions: (1) a plano-convex lens 130A having a planar side that also serves as a reflective surface; (2) a meniscus lens 130B; and (3) a concave mirror 130C; and a series of refractive fusion vermiculite and a calcium fluoride lens. It is contemplated that the front objective 130 can be configured differently than the configurations depicted in Figures 2 through 4 without departing from the spirit and scope of the present invention. It is contemplated that although a particular implementation of front objective 130 may vary, it may still be adjusted (optimized) to provide diffraction limited performance at the intermediate image (eg, having a Strehl ratio of 0.9 or better, and at some In the embodiment, there is a Strehl ratio of 0.5 or better. The intermediate image can then be magnified by a substantial value (e.g., 50X) such that the numerical aperture (NA) at the intermediate image plane is reduced to a relatively small value (e.g., 0.2 or less). It is expected that a smaller NA will make it possible to achieve this by optimizing the diffraction-limiting performance at the intermediate image. The smaller NA at the interface of the intermediate image plane also makes the coupling of the front objective lens 130 and the zoom repeater 132 relatively easy, so that the front objective lens 130 and the zoom repeater 132 can be independently designed, and the interface at the intermediate image. Can be telecentric. In addition, it should be noted that because the NA at the interface is small, the alignment tolerances of the zoom repeater 132 and the front objective lens 130 are relatively loose, which in turn allows for the design and manufacture of the imaging objective 108 in a cost effective manner. In some embodiments, it is preferred to have a telecentric intermediate image such that aberrations introduced by the zoom repeater 132 can be minimized. In the case where the intermediate image cannot be telecentric, an appropriate matching of the pupil positions can be considered so that the aberration introduced by the zoom repeater 132 can be optimized. FIG. 4 is a detailed depiction of one of the exemplary zoom repeaters 132. As shown in FIG. 4, the zoom repeater 132 can include three (partial) spherical mirrors 132A, 132B, and 132C that can be moved axially and vertically (eg, in the Y and Z directions) to maintain a fixed image. Plane 140. It should be noted that maintaining a fixed image plane 140 allows the sensor 110 to remain in a fixed position, which can be appreciated for a variety of reasons. It should also be noted that in some embodiments, the mirrors 132A, 132B, and 132C of the zoom repeater 132 may each be a mirror that does not block light. It should be noted that the shading is eliminated because shading reduces the low to medium frequency signal response. In some embodiments, mirrors 132A, 132B, and 132C of zoom repeater 132 are configured to have different curvatures. It should be noted that by configuring the zoom repeater 132 in this manner, a conjugate image plane relative to one of the intermediate images is produced in the image path. If the field stop is placed at the conjugate image plane in the illumination path of the auto-correction aberration, there is no need to optimize the illumination of the self-field pupil to the wafer conjugate. In other words, the lighting path design is now done automatically. In some embodiments, the repeater is designed to cover a 2X zoom range. If a large zoom range is desired, the zoom range can be divided into a plurality of sub-zoom assemblies, wherein each sub-zoom assembly implements a three-mirror zoom repeater 132 having aberrations corrected within the sub-zoom range. These zoom assemblies 132 can be configured to be switchable and can be utilized together to achieve a larger zoom range. It should be noted that since the NA for the repeater is relatively small (as previously described), the tilt and placement tolerances of the zoom assembly can be relatively loose, which makes alternative zoom possible. Figure 5 is a schematic diagram showing one of a plurality of sub-zoom assemblies overlapping as described herein. It should be noted that due to the total reflection design, the mirror repeater configured in this way will be able to automatically correct for chromatic aberrations. As will be appreciated from the foregoing, an imaging objective configured in accordance with the present invention can provide a perfect (diffraction limited) intermediate image, making it possible to provide an implementation for confocal applications. The diffraction limitation also means that the margin assigned to the aberration can be reduced, thereby allowing the inspection system equipped with the imaging objective configured in accordance with the present invention to be more efficient in reducing lens heating and stray light. It should be noted that since the NA at the intermediate image is relatively small, the integration tolerance is relatively loose, allowing for independent design and testing of the zoom repeater and front objective. In addition, since the zoom repeater is configured to utilize all of the mirrors configured to have minimal scattering, the stray light that is dependent on the scattering (which is an additional advantage of the total reflection repeater design) can be reduced. Furthermore, since the number of mirrors required to implement the zoom repeater is reduced, the manufacturing cost of the imaging objective configured in accordance with the present invention can be significantly reduced (e.g., compared to refractive fusion vermiculite and calcium fluoride lenses, low) The cost of NA spherical mirrors is very low), thus providing one feature that can be understood for a variety of reasons. It should be understood that although the above examples refer to wafers as target substrates, such references are merely illustrative and are not intended to be limiting. It is contemplated that the imaging objective and the inspection system equipped with the imaging objective configured in accordance with the present invention may be adapted for use with other types of polishing plates without departing from the spirit and scope of the present invention. The term wafer used in the present invention may include a sheet of semiconductor material used to fabricate integrated circuits and other devices, as well as other thin polishing plates (such as disk substrates, block gauges, and the like). It can also be appreciated that the various blocks depicted in the figures are presented separately for the purpose of illustration. It is contemplated that the various blocks depicted in the figures may be implemented as separate (and communicatively coupled) devices and/or processing units, and may be integrated without departing from the spirit and scope of the invention. It is believed that the system and apparatus of the present invention, as well as many of its attendant advantages, will be understood by the foregoing description, and it is understood that the form and construction of the components can be made without departing from the disclosed subject matter or without all of the material advantages thereof. And the configuration makes various changes. The form described is merely illustrative.
100‧‧‧檢查系統
102‧‧‧照明源
104‧‧‧照明鏡(透鏡系統)
106‧‧‧目標基板
107‧‧‧基板固持器
108‧‧‧成像物鏡
110‧‧‧感測器(偵測器)
112‧‧‧資料處理器
122‧‧‧光束
124‧‧‧入射光束
126‧‧‧輸出光
128‧‧‧投影
130‧‧‧前物鏡
130A‧‧‧平凸透鏡
130B‧‧‧凹凸透鏡
130C‧‧‧凹面鏡
132‧‧‧變焦中繼器/變焦總成
132A‧‧‧(部分)球形鏡
132B‧‧‧(部分)球形鏡
132C‧‧‧(部分)球形鏡
140‧‧‧固定影像平面100‧‧‧Check system
102‧‧‧Lighting source
104‧‧‧Lighting mirror (lens system)
106‧‧‧Target substrate
107‧‧‧Substrate Holder
108‧‧‧ imaging objective
110‧‧‧Sensor (detector)
112‧‧‧ data processor
122‧‧‧ Beam
124‧‧‧ incident beam
126‧‧‧Output light
128‧‧‧Projection
130‧‧‧ front objective
130A‧‧‧ Plano-convex lens
130B‧‧‧ meniscus lens
130C‧‧‧ concave mirror
132‧‧‧ Zoom Repeater/Zoom Assembly
132A‧‧‧(partial) spherical mirror
132B‧‧‧(partial) spherical mirror
132C‧‧‧(partial) spherical mirror
140‧‧‧Fixed image plane
熟習此項技術者藉由參考附圖可更好地理解本發明之許多優點，其中： 圖1係描繪根據本發明之一實施例組態之一檢查系統之一方塊圖； 圖2係描繪根據本發明之一實施例組態之一例示性成像物鏡之一光學佈局之一示意圖； 圖3係描繪圖2中展示之該光學佈局之一部分之一示意圖； 圖4係描繪圖2中展示之該光學佈局之另一部分之一示意圖；且 圖5係描繪展示用於圖2中展示之該光學佈局之各種放大率之多種變焦組態之重疊之一光學佈局之一示意圖。A person skilled in the art can better understand the many advantages of the present invention by referring to the accompanying drawings in which: FIG. 1 is a block diagram depicting one of the inspection systems in accordance with an embodiment of the present invention; One embodiment of the present invention configures one of the optical layouts of one exemplary imaging objective; FIG. 3 is a schematic diagram showing one of the optical layouts shown in FIG. 2; FIG. 4 depicts the A schematic diagram of one of the other portions of the optical layout; and FIG. 5 is a schematic diagram showing one of an optical layout showing the overlap of the various zoom configurations for the various magnifications of the optical layout shown in FIG. 2.
100‧‧‧檢查系統 100‧‧‧Check system
102‧‧‧照明源 102‧‧‧Lighting source
104‧‧‧照明鏡(透鏡系統) 104‧‧‧Lighting mirror (lens system)
106‧‧‧目標基板 106‧‧‧Target substrate
107‧‧‧基板固持器 107‧‧‧Substrate Holder
108‧‧‧成像物鏡 108‧‧‧ imaging objective
110‧‧‧感測器(偵測器) 110‧‧‧Sensor (detector)
112‧‧‧資料處理器 112‧‧‧ data processor
122‧‧‧光束 122‧‧‧ Beam
124‧‧‧入射光束 124‧‧‧ incident beam
126‧‧‧輸出光 126‧‧‧Output light
128‧‧‧投影 128‧‧‧Projection
Claims (22)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662290586P | 2016-02-03 | 2016-02-03 | |
| US62/290,586 | 2016-02-03 | ||
| US15/279,053 US10656098B2 (en) | 2016-02-03 | 2016-09-28 | Wafer defect inspection and review systems |
| US15/279,053 | 2016-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201736900A true TW201736900A (en) | 2017-10-16 |
| TWI697691B TWI697691B (en) | 2020-07-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106103685A TWI697691B (en) | 2016-02-03 | 2017-02-03 | Wafer defect inspection and review systems |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3411694A4 (en) |
| KR (1) | KR102450005B1 (en) |
| CN (1) | CN109073565B (en) |
| IL (1) | IL260416B (en) |
| TW (1) | TWI697691B (en) |
| WO (1) | WO2017136286A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI873450B (en) * | 2021-08-18 | 2025-02-21 | 美商昂圖創新公司 | High resolution multi-field-of-view imaging system and method for assisting inspection of a substrate |
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| US5071240A (en) * | 1989-09-14 | 1991-12-10 | Nikon Corporation | Reflecting optical imaging apparatus using spherical reflectors and producing an intermediate image |
| US5726671A (en) * | 1996-10-07 | 1998-03-10 | Hughes Electronics | Helmet/head mounted projector system |
| TW516083B (en) * | 2000-09-18 | 2003-01-01 | Olympus Optical Co | Optical sensor |
| AU2002254276A1 (en) * | 2001-03-19 | 2002-10-03 | Peter H. Bartels | Miniaturized microscope array digital slide scanner |
| JP4349550B2 (en) * | 2001-03-29 | 2009-10-21 | フジノン株式会社 | Reflective projection optics |
| DE10139177A1 (en) * | 2001-08-16 | 2003-02-27 | Zeiss Carl | Objective with pupil obscuration |
| US6879383B2 (en) * | 2002-12-27 | 2005-04-12 | Ultratech, Inc. | Large-field unit-magnification projection system |
| US7307783B2 (en) * | 2003-02-21 | 2007-12-11 | Kla-Tencor Technologies Corporation | Catadioptric imaging system employing immersion liquid for use in broad band microscopy |
| US6863403B2 (en) * | 2003-05-27 | 2005-03-08 | Ultratech, Inc. | Deep ultraviolet unit-magnification projection optical system and projection exposure apparatus |
| US7466489B2 (en) * | 2003-12-15 | 2008-12-16 | Susanne Beder | Projection objective having a high aperture and a planar end surface |
| US20060198018A1 (en) * | 2005-02-04 | 2006-09-07 | Carl Zeiss Smt Ag | Imaging system |
| US7351980B2 (en) * | 2005-03-31 | 2008-04-01 | Kla-Tencor Technologies Corp. | All-reflective optical systems for broadband wafer inspection |
| EP1912098B1 (en) * | 2006-10-12 | 2012-04-25 | Carl Zeiss SMT GmbH | Unit magnification projection objective |
| JP2009081304A (en) * | 2007-09-26 | 2009-04-16 | Canon Inc | Projection optical system, exposure apparatus, and device manufacturing method |
| JP5331813B2 (en) * | 2007-10-02 | 2013-10-30 | ケーエルエー−テンカー・コーポレーション | Reflective objective, broadband objective optical system with mirror, optical imaging system with refractive lens, and broadband optical imaging system with two or more imaging paths |
| WO2009121628A2 (en) * | 2008-04-04 | 2009-10-08 | Nanda Technologies Gmbh | Optical inspection system and method |
| DE102008017645A1 (en) * | 2008-04-04 | 2009-10-08 | Carl Zeiss Smt Ag | Apparatus for microlithographic projection exposure and apparatus for inspecting a surface of a substrate |
| US9279774B2 (en) * | 2011-07-12 | 2016-03-08 | Kla-Tencor Corp. | Wafer inspection |
| US9448343B2 (en) * | 2013-03-15 | 2016-09-20 | Kla-Tencor Corporation | Segmented mirror apparatus for imaging and method of using the same |
| US9772297B2 (en) * | 2014-02-12 | 2017-09-26 | Kla-Tencor Corporation | Apparatus and methods for combined brightfield, darkfield, and photothermal inspection |
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2017
- 2017-01-30 EP EP17747984.7A patent/EP3411694A4/en active Pending
- 2017-01-30 CN CN201780020550.1A patent/CN109073565B/en active Active
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- 2017-01-30 KR KR1020187025456A patent/KR102450005B1/en active Active
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI873450B (en) * | 2021-08-18 | 2025-02-21 | 美商昂圖創新公司 | High resolution multi-field-of-view imaging system and method for assisting inspection of a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017136286A1 (en) | 2017-08-10 |
| EP3411694A1 (en) | 2018-12-12 |
| CN109073565A (en) | 2018-12-21 |
| KR20180101628A (en) | 2018-09-12 |
| IL260416B (en) | 2022-01-01 |
| EP3411694A4 (en) | 2019-09-04 |
| CN109073565B (en) | 2022-03-15 |
| KR102450005B1 (en) | 2022-09-30 |
| TWI697691B (en) | 2020-07-01 |
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