TW201734231A - Inter-back type deposition system with reduced footprint - Google Patents

Abstract

The present invention relates to a deposition system and more particularly to an inter-back type deposition system that can reduce the footprint thereof by continuously introducing and discharging substrates into and out of multiple deposition chambers when performing deposition in an inter-back manner using the multiple deposition chambers.

Description

Reciprocating deposition system with reduced coverage area

The present invention relates to a deposition system, and more particularly to a reciprocating deposition system having a reduced coverage area, wherein the substrate is transported one by one and continuously into and out of the complex deposition when performing a reciprocating deposition using a plurality of deposition chambers. The chamber has a high deposition yield.

The deposition system is a system for depositing a thin film on the surface of a substrate. Since the film is usually deposited under vacuum, the deposition system is also referred to as a vacuum deposition system.

The deposition method is divided into a physical vapor deposition (PVD) method and a chemical vapor deposition (CVD) method. The PVD method forms a thin film by sputtering and depositing a target on a substrate under a vacuum environment. The CVD method forms a thin film by thermally or electrically exciting a material gas and depositing a reactive material on a substrate.

On the other hand, the deposition system is classified into a batch type and an inline type. Batch mode is a deposition system that performs a plurality of depositions on a substrate that is fixed in a vacuum chamber. Tandem is a deposition system that forms a plurality of thin films on a substrate by sequentially transferring a substrate from one chamber to another by performing a plurality of depositions in different vacuum chambers.

In the tandem deposition system, the plurality of vacuum chambers are arranged in a row, and deposition is performed on the substrate in each of the vacuum chambers while transferring the substrate from the first vacuum chamber to the last vacuum chamber. Tandem deposition systems are useful when forming a plurality of films on a substrate.

However, since the substrate is only transported in one direction, there is a problem in the tandem deposition system that the coverage area is large. In particular, when forming a plurality of films made of the same material, it is necessary to arrange the plurality of vacuum chambers in a row, which increases the coverage area of the overall deposition system.

Another problem with tandem deposition systems is that the deposition rate is low since only one substrate is transferred from one chamber to another at a time.

DISCLOSURE OF THE INVENTION Accordingly, the present invention is directed to the above problems occurring in the prior art, and an object of the present invention is to provide a reciprocating deposition system having a reduced coverage area and improved deposition yield when forming a plurality of films. . Technical means of solving problems

To accomplish the above object, the present invention provides a reciprocating deposition system comprising: a plurality of deposition chambers connected to each other in a row and performing a deposition process; and a plurality of substrate moving elements mounted in the respective deposition chambers for transporting the substrates in and out Individual deposition chambers; wherein a plurality of substrates are continuously transferred from one deposition chamber to another deposition chamber in a manner to undergo deposition processing in a corresponding deposition chamber: when the substrate is from a current deposition chamber Upon unloading, the substrate is introduced into the next deposition chamber.

In a preferred embodiment, each substrate undergoes a deposition process in each deposition chamber and is sequentially transferred from one deposition chamber to another, wherein each substrate is returned to the first deposition chamber (for the initial substrate) The introduced deposition chamber) is then unloaded from the first deposition chamber.

In a preferred embodiment, the reciprocating deposition system may further comprise a plurality of buffer chambers, each buffer chamber being disposed between the deposition chambers adjacent to each other, the buffer chambers being adjacent to the two deposition chambers The substrates in the chamber are exchanged with each other.

In a preferred embodiment, each buffer chamber may be equipped with a substrate lifting element disposed therein, the substrate lifting element supporting at least two substrates disposed side by side and moving the substrate up or down to The substrate is positioned at the entrance of the deposition chamber.

In a preferred embodiment, each of the deposition chambers, or each of the two deposition chambers, can be equipped with a substrate lifting element that moves the substrate up or down to position the substrate The inlet of the deposition chamber is thereby achieved by mutually exchanging substrates in the two deposition chambers adjacent to each other.

In a preferred embodiment, the reciprocating deposition system may further include a lifting chamber disposed adjacent to each deposition chamber, supporting at least two substrates disposed side by side thereon, and moving through the upper and lower sides The substrate is positioned at the entrance of the deposition chamber; wherein the substrate is selectively transferred into the deposition chamber for undergoing a deposition process in the deposition chamber.

In a preferred embodiment, the reciprocating deposition system can further include a heating chamber to remove moisture by heating the substrate before the substrate is introduced into the deposition chamber.

In a preferred embodiment, the reciprocating deposition system can further include a plasma processing chamber for treating the substrate with plasma prior to introduction of the substrate into the deposition chamber to remove organic material from the substrate.

In a preferred embodiment, the substrate may first be introduced into the heating chamber; then sequentially transferred into the plasma processing chamber and the deposition chamber; and finally returned to the heating chamber and unloaded to Outside.

In a preferred embodiment, the deposition chamber includes a stainless steel film deposition chamber and a copper film deposition chamber, wherein a buffer chamber is disposed between the stainless steel film deposition chamber and the copper film deposition chamber to The stainless steel film deposition chamber and the substrate in the copper film deposition chamber are exchanged with each other; wherein the substrate is conveyed and sequentially passed in the order shown below: the heating chamber, the plasma processing chamber, the a stainless steel thin film deposition chamber, and the copper thin film deposition chamber; and wherein after the copper thin film is deposited on the substrate in the copper thin film deposition chamber, the substrate is transferred and sequentially passed in the order shown below: A stainless steel film deposition chamber, the plasma processing chamber, and the heating chamber are thereby returned to the heating chamber and unloaded to the outside.

In a preferred embodiment, the deposition chamber includes a stainless steel film deposition chamber, a first copper film deposition chamber, and a second copper film deposition chamber, wherein the buffer chambers are respectively disposed in the stainless steel film deposition chamber and Between the first copper film deposition chambers, between the first copper film deposition chamber and the second copper film deposition chamber, to exchange substrates in adjacent deposition chambers; wherein the substrate is And sequentially passed through in the following order: the heating chamber, the plasma processing chamber, the stainless steel film deposition chamber, the first copper film deposition chamber, and the second copper film deposition chamber And wherein after depositing the second copper film on the substrate in the second copper film deposition chamber, the substrate is transferred sequentially through the order shown as follows: the first copper film deposition chamber, the A stainless steel film deposition chamber, the plasma processing chamber, and the heating chamber are thereby returned to and unloaded from the heating chamber.

In a preferred embodiment, the deposition chamber includes a stainless steel film deposition chamber, a first copper film deposition chamber, and a second copper film deposition chamber, wherein the buffer chambers are respectively disposed in the stainless steel film deposition chamber and Between the first copper film deposition chambers, between the first copper film deposition chamber and the second copper film deposition chamber, to exchange substrates in adjacent deposition chambers; wherein the substrate is And sequentially passed through in the following order: the heating chamber, the plasma processing chamber, the stainless steel film deposition chamber, the first copper film deposition chamber, and the second copper film deposition chamber After depositing a second copper film on the substrate in the second copper film deposition chamber, the substrate is sequentially transferred through the following sequence: the first copper film deposition chamber, the stainless steel a thin film deposition chamber, the plasma processing chamber, and the heating chamber, and then unloaded to the outside; and wherein a second copper is deposited in the second copper film deposition chamber when the substrate is returned to the heating chamber a film on the substrate, Depositing a second thin film on the stainless steel substrate of the stainless steel thin film deposition chamber.

According to another aspect, a substrate having at least one stainless steel film and at least one copper film is provided, both of which are deposited on the substrate using a deposition system in accordance with a preferred embodiment of the present invention.

In a preferred embodiment, the stainless steel film and the copper film can act as an electromagnetic interference (EMI) masking film.

In a preferred embodiment, the substrate is a sample attached film (hereinafter referred to as a "sample attachment film"), the sample being a subject subjected to deposition processing; wherein the deposition chamber is equipped with a sample support table, Supporting the sample attachment film disposed thereon, thereby allowing a coating layer to be deposited on the sample; wherein the reciprocating deposition system further includes a weight bar stacker installed in a previous stage of the deposition chamber And a weight bar is loaded therein, the weight bar is placed on the sample attachment film before the sample attachment film is introduced into the deposition chamber, such that the weight bar presses the sample attachment film On the sample support table, the sample attachment film is in intimate contact with the sample support table when the sample attachment film is placed on the sample support table.

In a preferred embodiment, the weight bar stacker can be equipped with a moving element that unidirectionally transfers the sample attachment film from the weight bar stacker to the deposition chamber, or bidirectionally A sample attachment film is transferred from the weight bar stacker to the deposition chamber and from the deposition chamber to the weight bar stacker after the coating layer is deposited on the sample.

In a preferred embodiment, a plurality of the sample attachment films are sequentially introduced into the weight bar stacker and subsequently introduced into the deposition chamber; and wherein the weight bar stacker is provided with a weight bar support A table, which supports the weight bars that are placed side by side and to be placed on each sample attachment film.

In a preferred embodiment, the weight bar stacker can be equipped with a weight bar lifting element that moves the weight bar support table up and down and moves the weight bar disposed on the weight bar support table To the edge portion of the upper surface of the sample attachment film.

In a preferred embodiment, the weight bar stacker may include a vacuum chamber for accommodating the weight bar support table and the weight bar lifting member for moving the weight bar under vacuum To the edge portion of the upper surface of the sample attachment film.

In a preferred embodiment, the internal temperature of the vacuum chamber can be lower than the internal temperature of the deposition chamber.

In a preferred embodiment, a support block having a frame shape can be attached to an edge portion of the upper surface of the sample attachment film, thereby maintaining the shape of the sample attachment film; and wherein the weight bar is placed On the support block.

In a preferred embodiment, the weight bar stacker may further be provided with an internal shield stacked on or under the weight bar in the weight bar stacker, and together with the weight bar Moving onto an edge portion of the upper surface of the sample attachment film; wherein the inner shield limits the extent of dispersion in which the deposition material is dispersed in the deposition chamber.

In a preferred embodiment, the upper surface of the sample support table can be a curved surface.

In a preferred embodiment, the upper surface area of the sample support table may be smaller than the upper surface area of the sample attachment film; wherein the weight bar is spaced from the edge portion of the sample support table and the sample is attached The film is such that the sample attachment film is in intimate contact with the upper surface of the sample support.

In a preferred embodiment, the coating layer can be a copper film, a stainless steel film, or a combination of at least one copper film and at least one stainless steel film.

In a preferred embodiment, the coating layer acts as an electromagnetic interference (EMI) masking film. Control the efficacy of prior art

The present invention has the following benefits.

According to the present invention, the deposition system can perform deposition while repeatedly moving the substrate between the plurality of deposition chambers in an iterative manner, thereby reducing the number of deposition chambers for depositing a plurality of layers on the substrate, and reducing the overall system Coverage area.

According to the present invention, the deposition system can increase the deposition yield by sequentially transferring the substrates in and out of the respective deposition chambers in an iterative manner.

According to the invention, the deposition system loads a weight bar (to press the film against the sample support table so that the film is in intimate contact with the sample support table) loaded into the weight bar stoker (installation) In the outer side of the deposition chamber) and lowering the temperature of the weight bar, thereby avoiding damage or deformation of the deposited film and avoiding uneven thickness or defects of the coating layer formed on the sample.

According to the present invention, when performing tandem or reciprocating deposition, the deposition system can automatically process the process and increase the processing rate by automatically placing the weight bar on each film.

According to the present invention, the deposition system maximizes the contact force between the device and the sample support table, thereby effectively dissipating heat generated from the device, or conversely, effectively heating the device, which greatly improves the quality of the coating layer. .

Best aspects unless it is defined otherwise, all terms used herein (including technical and scientific terms) have the meanings known to those of ordinary equivalent. It should be further understood that the terms (such as those specifically defined by the applicant of the present application) should be interpreted as having meanings that are consistent with their meaning in the context of the present invention and the related art, and should not be idealized or too The meaning of the form is interpreted.

Hereinafter, the technical configuration of the present invention will be described with reference to preferred embodiments illustrated in the accompanying drawings.

However, the invention is not limited to the preferred embodiments described herein, and may be embodied in various forms. In the drawings, like reference numerals refer to the like elements. Aspect of the invention [First Embodiment]

Figure 1 illustrates a deposition system in accordance with a first embodiment of the present invention. In accordance with a first embodiment of the present invention, deposition system 100 includes a plurality of deposition chambers 110 and 120 connected to each other in columns and performing a deposition process therein.

A plurality of substrate moving elements 111 and 121 are mounted in individual deposition chambers 110 and 120 to introduce substrates into deposition chambers 110 and 120 and to unload substrates from deposition chambers 110 and 120.

Each of the substrate moving members 111 and 121 may be a roller or a conveyor belt.

The plurality of targets 112 and 122 coated with the deposition material are mounted in individual deposition chambers 110 and 120. The deposition material coated on each of the targets 112 and 122 is first sputtered or vaporized, and then physically deposited to form a thin film.

However, in chemical vapor deposition, the target electrodes 112 and 122 may be replaced by a target electrode. In this example, the target electrode is not coated with a deposition material. In chemical vapor deposition, a deposition material is deposited and coated by a chemical reaction that forms a gas into a thin film in a deposition chamber.

That is, the deposition chambers 110 and 120 may perform physical vapor deposition or chemical vapor deposition.

Further, the deposition chambers 110 and 120 may be chambers that perform deposition processing in various manners (eg, ion plating), and are not limited to any deposition method.

Further, each of the deposition chambers 110 and 120 continuously performs a deposition process in such a manner that when the substrate is unloaded from the first deposition chamber after the deposition process in the first deposition chamber, another substrate is immediately introduced into the first deposition chamber The chamber is subjected to deposition treatment in the deposition chamber.

That is, the deposition chambers 110 and 120 can perform deposition processing on the different substrates 11 and 12, respectively.

Thus, compared to conventional tandem deposition systems, where only one substrate is subjected to a deposition process in a deposition chamber at a time, the deposition system has a higher deposition yield.

Further, the substrates 10, 11 and 12 are sequentially introduced into the respective deposition chambers 110 and 120 (one by one), and are successively subjected to deposition processing in the respective deposition chambers 110 and 120. After each of the substrates 10, 11 and 12 passes through all of the deposition chambers 110 and 120, the respective substrates are returned to the first deposition chamber 110 (the deposition system initially introduced for each substrate) and then unloaded from the first deposition chamber.

That is, according to the first embodiment, in the deposition system 100, the substrate is transferred in a reciprocating manner, in which the substrate is returned to the original deposition chamber and then unloaded to the outside. That is, the substrate is subjected to a deposition process by reciprocatingly moving between the deposition chamber 110 and the deposition chamber 120 at least once.

According to a first embodiment of the present invention, deposition system 100 may further include a buffer chamber 130 disposed between deposition chamber 110 and deposition chamber 120. The buffer chamber 130 transfers the substrate in a reciprocating manner.

The buffer chamber 130 also functions to exchange substrates in adjacent deposition chambers 110 and 120. Therefore, the buffer chamber 130 is equipped with a substrate lifting member 131 on which two substrates can be disposed side by side. The substrate lifting and lowering member 131 can move the substrate up and down, thereby changing the loading position of the substrate.

Further, the substrate elevating member 131 may include at least two substrate moving members 131a and 131b that are movable up and down, spaced apart from each other, and may transport the substrate in the advancing direction "a" or the retreating direction "b".

Next, the operation of the substrate lifting member 131 will be briefly described. First, the substrate 11 subjected to the deposition process in the first deposition chamber 110 and the substrate 12 subjected to the deposition process in the second deposition chamber 120 are independently introduced into the buffer chamber 130 at different times, and then loaded into individual chambers. The substrate is moved on the elements 131a and 131b.

At this time, the substrate 11 subjected to the deposition processing in the first deposition chamber 110 is loaded on the first substrate moving member 131a of the two substrate moving members 131a and 131b. The substrate moving members 131a and 131b are moved up or down such that the substrate 12 (which undergoes a deposition process in the second deposition chamber 120) can be loaded on the second substrate moving member 131b.

On the contrary, after the substrate 12 (which has undergone deposition processing in the second deposition chamber 120) is loaded on the first substrate moving member 131a, the substrate 11 (which is subjected to deposition processing in the first deposition chamber 110) can be loaded on the first The two substrates are moved on the element 131b.

Next, the substrate moving members 131a and 131b are moved up or down to position the substrate 11 (which is subjected to deposition processing in the first deposition chamber 110) at the entrance of the second deposition chamber 120, and then introduce the substrate 11 into the second In the deposition chamber 120. The substrate moving elements 131a and 131b are again moved up or down to position the substrate 12 (which undergoes a deposition process in the second deposition chamber 120) at the entrance of the first deposition chamber 110, and then introduce the second substrate 12 into the first Deposited in chamber 110.

Conversely, the substrate 12 (which undergoes a deposition process in the second deposition chamber 120) may be first introduced into the first deposition chamber 110, and the substrate 11 (which undergoes a deposition process in the first deposition chamber 110) may then be introduced into the second deposition. In the chamber 120.

The reciprocating deposition method uses only two deposition chambers to form a three-layer deposition layer because the first deposition layer is deposited in the first deposition chamber 110; the second deposition layer is deposited in the second deposition chamber 120; The third deposited layer is deposited in the first deposition chamber 110 as the substrate returns. Thus, a reciprocating deposition system is beneficial in that it has a reduced footprint compared to conventional tandem deposition systems (three deposition chambers are required in the same situation). [Second embodiment]

Figure 2 illustrates a deposition system in accordance with a second embodiment. According to a second embodiment, deposition system 200 includes: a plurality of deposition chambers 110 and 120, each performing a deposition process; and a lift chamber 210 that selectively positions substrate 10 in either of deposition chambers 110 and 120 The inlet, the substrate 10 is introduced into any of the deposition chambers 110 and 120, or the substrate 10 unloaded from one of the deposition chambers 110 and 120 is received.

Further, the deposition chambers 110 and 120 used in the second embodiment are substantially the same as the deposition chambers 110 and 120 used in the first embodiment, and therefore will not be described again.

In addition, FIG. 2 shows an example in which the deposition chambers 110 and 120 are stacked in the vertical direction. Alternatively, the deposition chambers 110 and 120 may be disposed side by side.

The interior space of the lift chamber 210 is in communication with the inlets of the deposition chambers 110 and 120. In other words, the inlet of any of the deposition chambers 110 and 120 leads to the interior space of the lift chamber 210.

Further, the lifting chamber 210 is equipped with a substrate lifting member 211 disposed therein. The substrate lifting member 211 may include at least two substrate moving members 211a and 211b which are disposed apart from each other and side by side.

In addition, the substrate moving elements 211a and 211b can be moved up or down to transfer the substrate 10 into the individual deposition chambers 110 and 120 and receive the substrate 10 unloaded from the deposition chambers 110 and 120.

That is, the lifting chamber 210 has the same function as the buffer chamber 130 used in the first embodiment, but the arrangement of the chambers is different. That is, the chambers in the second embodiment are arranged in a cluster form, but the chambers in the first embodiment are arranged in an inline pattern. [Third embodiment]

Figure 3 illustrates a deposition system in accordance with a third embodiment of the present invention. According to a third embodiment, the deposition system 300 includes: a plurality of deposition chambers 110 and 120 (a first deposition chamber 110 and a second deposition chamber 120); a buffer chamber 130 disposed between the deposition chambers 110 and 120; And a heating chamber 310 disposed in a prior stage of the deposition chambers 110 and 120 to remove moisture from the substrate 10 prior to forming the deposited film on the substrate 10.

That is, the deposition system 300 according to the third embodiment of the present invention additionally includes the heating chamber 310 as compared to the deposition system 100 according to the first embodiment.

The substrate elevating member 311 is mounted in the heating chamber 310 to transport the substrate 10 in a reciprocating manner. The substrate lifting member 311 may include two substrate moving members 311a and 311b that are spaced apart from each other and disposed side by side.

Further, the substrate lifting member 311 has the same function as the substrate lifting member 131 provided in the buffer chamber 130 of the deposition system 100 of the first embodiment.

A buffer chamber may be additionally disposed between the heating chamber 310 and the first deposition chamber 110. The buffer chamber moves the substrate up and down and exchanges the heating chamber 310 with the substrate in the first deposition chamber 110. In this example, the heating chamber 310 can be equipped with only a substrate moving element.

The deposition system 300 according to the third embodiment may further include a plasma processing chamber 320 disposed between the heating chamber 310 and the first deposition chamber 110.

The plasma processing chamber 320 treats the surface of the substrate 10 using plasma, thereby removing impurities or organic substances on the surface of the substrate 10.

The plasma processing chamber 320 can be equipped with a substrate lifting element 321 disposed therein. The substrate lifting member 321 transfers the substrate 10 in a reciprocating manner. The substrate lifting member 321 includes at least two substrate moving members 321a and 321b which are spaced apart from each other and disposed side by side.

The deposition system 300 may further include: a first buffer chamber disposed between the plasma processing chamber 320 and the first deposition chamber 110; and a second buffer chamber disposed in the plasma processing chamber 320 and the heating chamber 310 between. In this example, the plasma processing chamber 320 may not be equipped with a substrate lifting element 321 but only one substrate moving element.

In addition, regarding the first and second deposition chambers 110 and 120, the first deposition chamber 110 may be a stainless steel thin film deposition chamber for forming a stainless steel film; the second deposition chamber 120 may be a copper for forming a copper film. Thin film deposition chamber.

That is, the substrate 10 passes in the order shown below: the heating chamber 310, the plasma processing chamber 320, the stainless steel thin film deposition chamber 110, and the copper thin film deposition chamber 120. Therefore, the stainless steel film and the copper film are sequentially formed on the substrate 10. After depositing the copper film, the substrate 10 is transferred in the order shown below: a stainless steel film deposition chamber 110, a plasma processing chamber 320, and a heating chamber 310. Thereafter, the substrate 10 is unloaded from the deposition system 300.

The stainless steel film and the copper film can be used as an electromagnetic interference (EMI) shielding film. [Fourth embodiment]

Figure 4 illustrates a deposition system in accordance with a fourth embodiment of the present invention. According to the fourth embodiment, the deposition system 400 includes: a heating chamber 310, a plasma processing chamber 320, a stainless steel thin film deposition chamber 110, a first buffer chamber 130, a first copper thin film deposition chamber 120, and a second buffer chamber. The chamber 420, and the second copper film deposition chamber 410, which are connected to each other in the order shown.

That is, the deposition system 400 according to the fourth embodiment additionally includes the buffer chamber 420 and the copper thin film deposition chamber 410 as compared with the deposition system 300 of the third embodiment.

The substrate 10 passes in the following order: a heating chamber 310, a plasma processing chamber 320, a stainless steel thin film deposition chamber 110, a first buffer chamber 130, a first copper film deposition chamber 120, and a second buffer chamber. 420, and a second copper film deposition chamber 410. After the second copper film is deposited on the substrate 10 in the second copper film deposition chamber 410, the substrate 10 is transferred through the following order: the second buffer chamber 420, the first copper film deposition chamber 120, The first buffer chamber 130, the stainless steel thin film deposition chamber 110, the plasma processing chamber 320, and the heating chamber 310. Thereafter, the substrate 10 is unloaded to the outside.

When the substrate 10 is moved in this manner, the stainless steel film, the first copper film, and the second copper film are sequentially laminated on the substrate 10, and these films are combined to function as an EMI shielding film.

When the substrate 10 is returned in the reverse direction, another copper film may be deposited on the substrate 10 in the first copper film deposition chamber 120, and another stainless steel film may be deposited on the substrate 10 in the stainless steel film deposition chamber 110.

That is, the stainless steel film, the first copper film, the second copper film, the additional copper film, and another stainless steel film may be laminated on the substrate, and these films are combined to function as an EMI shielding film.

Further, the EMI shielding film may be a plurality of layers of films in which the number of layers is determined according to the thickness of each deposited layer and the allowable deposition temperature that the substrate 10 can withstand. [Fifth Embodiment]

Figure 5 illustrates a deposition system in accordance with a fifth embodiment of the present invention. According to the fifth embodiment, the deposition system 500 is identical to the deposition system 100 of the first embodiment, but the deposition system 500 does not include the buffer chamber 130 (disposed between the deposition chambers 110 and 120 for exchanging the substrates 11 and 12), And any one of the deposition chambers 110 and 120 adjacent to each other is equipped with a substrate lifting and lowering member 131.

Since the substrate lifting member 131 used in the fifth embodiment is substantially the same as the substrate lifting member 131 provided in the buffer chamber 130 of the first embodiment, the description about the substrate lifting member 131 used in the fifth embodiment is omitted. .

There may be a plurality of substrate lifting elements 131, and thus deposition chambers 110 and 120 may be equipped with individual substrate lifting elements 131.

That is, since the deposition system 500 according to the fifth embodiment is constructed by removing the buffer chamber 130 from the deposition system 100 of the first embodiment, the deposition system 500 has more coverage than the deposition system 100. region. [Sixth embodiment]

Figure 6 illustrates a deposition system in accordance with a sixth embodiment of the present invention. Figure 7 is a schematic view showing a support block and a weight bar of a deposition system in accordance with a sixth embodiment of the present invention. Figure 8 is a perspective view showing an example of an exemplary support table of a deposition system in accordance with a sixth embodiment of the present invention. 9 is a plan view showing another example of an exemplary support table of a deposition system in accordance with a sixth embodiment of the present invention.

Referring to FIG. 6, the deposition system 600 according to the sixth embodiment additionally includes a weight bar stoker 610 that is applied to the deposition chamber 110 as compared to the deposition system 100 according to the first embodiment.

Furthermore, the deposition chamber 110 is equipped with a sample support table 123 that is disposed to face the target 122 and that supports the sample 20 placed thereon.

Further, in the deposition system 600 according to the sixth embodiment of the present invention, the substrate as the main body subjected to the deposition (coating) process is the sample 20 (for example, an electric or electronic device).

Further, the deposition chamber 110 is equipped with a moving member 121 (corresponding to the moving member 111 of FIG. 1, hereinafter referred to as "first moving member") disposed therein. The moving element 121 acts to place the sample 20 introduced into the deposition chamber 110 on the sample support table 123; or to unload the sample 20 from the deposition chamber 110 after the deposition process is completed.

Furthermore, the first moving element 121 can transport the sample 20 (one-way transfer) in a second direction (opposite the first direction), wherein the sample 20 is introduced into the deposition chamber; and the sample 20 can be returned in the first direction ( Two-way transmission).

That is, the deposition chamber 110 transmits the sample 20 unidirectionally, thereby performing a tandem deposition process. Further, the deposition chamber 110 transfers the sample 20 bidirectionally, thereby performing a reciprocating deposition process.

Additionally, a plurality of samples 20 can be attached to the surface of film 30 and introduced into deposition chamber 110. The sample 20 is placed on a sample support table 123 with a film 30 interposed therebetween.

Further, the film 30 may be an adhesive film. The film 30 may be a polyimide film or a PI film.

Further, the sample support table 123 may be a plate in the deposition chamber 110 for supporting the film 30 (attachment of the sample 20) (hereinafter referred to as "sample attachment film"). The sample support table 123 can be fixed during deposition. Alternatively, the sample support table 123 may reciprocate in the deposition chamber 110 or may pass through the deposition chamber 110.

In other words, the sample support table 123 supports the sample 20 placed above such that the sample 20 can be subjected to batch deposition or tandem deposition in the deposition chamber 110.

Specifically, referring to FIG. 8, the sample support table 123 has a curved upper surface (having a predetermined curvature R) and a flow passage 123b formed therein through which a cooling fluid or a heating fluid can flow.

That is, the sample support table 123 positions the sample 20 at a preset position in the deposition chamber and adjusts the temperature of the sample 20.

Typically the cooling fluid flows through the flow channel 123b, thereby cooling the sample 20. However, during the initial stages of deposition, heating fluid can flow through the flow channel 123b to heat the sample 20 to a preset temperature.

That is, the sample support table 123 can function as a cooling chuck or a heating chuck.

Further, at least a portion of the upper surface of the sample support table 123 is curved. For example, the sample support table 123 can have a rectangular cross section with a rounded upper corner.

Further, the sample support table 123 may have a section with a curved line. For example, the cross section of the sample support table 123 may be polygonal, such as triangular or trapezoidal.

To maximize the grip of the sample attachment film 30, the upper surface of the sample support table 123 is preferably curved.

Further, the width w1 and the length w2 of the sample support table 123 are smaller than that of the sample attachment film 30, so that the entire upper surface of the sample support table 123 can be covered by the sample attachment film 30.

In other words, the sample support table 123 has a smaller upper surface area than the sample attachment film 30.

Further, the upper surface of the sample support table 123 may be provided with a negative groove G having a preset depth.

The grooves G may be connected to each other thereby being in communication with each other. For example, the grooves are formed in a lattice pattern as shown in FIG.

The pattern of the grooves G is not limited, and the grooves G may be formed in any pattern as long as the grooves are evenly distributed on the upper surface of the sample support table 123 and connected to each other.

Further, although not depicted in the drawings, a vent slit is formed in the groove G of the sample support table 123 so that the internal air can escape through the vent slit. When the sample attachment film 30 is placed on the sample support table 123, the air in the groove G is discharged through the vent slit, so that the sample attachment film 30 can be in close contact with the sample support table 123, thereby improving heat transfer efficiency.

Further, the upper surface of the sample support table 123 may be coated with a buffer pad to increase the contact force between the sample support table 123 and the sample attachment film 30. The cushion can be a silicone pad.

In addition, the cushion also functions as an insulating layer to insulate the sample 20 from the sample support table 123 from each other.

In addition, FIG. 8 illustrates an example in which the sample support table 123 has a rectangular upper surface 123a. Alternatively, as shown in FIG. 9, the sample support table 123 may have a circular upper surface 123c.

Referring to Figure 6, the weight bar stocker 610 is installed in a previous stage of the deposition chamber 110. Therefore, the sample attachment film 30 is introduced into the deposition chamber 110 via the weight bar stocker 610.

Figure 6 illustrates the situation in which the weight bar stocker 610 is in direct contact with the deposition chamber 110. Alternatively, however, the weight bar stocker 610 can be separated from the deposition chamber 110.

To transport the sample attachment film 30 in a tandem or reciprocating manner, the weight bar stocker 610 and the deposition chamber 110 are disposed adjacent to each other with a door interposed therebetween. That is, when the door is opened, the weight bar stacker 610 and the deposition chamber 110 can communicate with each other.

The weight bar stocker 610 stores therein the weight bar 611 and places the weight bar 611 on the edge portion of the upper surface of the sample attachment film 30.

Further, referring to FIG. 7, the weight bar 611 is placed on the upper surface of the sample attachment film 30, and the following sample is attached to the edge portion of the film 30. The weight bar 611 may have a frame shape.

Figure 7 presents a weight bar 611 having a rectangular frame shape. However, if the sample attachment film 30 has a circular shape, the weight bar 611 may have an annular shape (a circular frame).

Since the size of the film 30 is limited, the weight of the weight bar 611 is also limited. Therefore, the weight bar 611 is preferably made of a metal material having a high specific gravity, and has a large weight to a small volume.

Preferably, the weight bar 611 is made of copper or stainless steel.

Further, a support block 611a having a frame shape may be attached to an edge portion of the upper surface of the sample attachment film 30 to maintain the shape of the sample attachment film 30. In this example, the weight bar 611 is placed on the support block 611a.

Further, a weight bar support table 613 is installed in the weight bar stocker 610 to support the plurality of weight bars 611 arranged side by side. The weight bar support table 613 clamps or removes the stacked weight bars 611 one by one.

The weight bar stacker 610 can be equipped with a weight bar lifting element 614 that moves the weight bar support table 613 in a vertical direction, thereby positioning the weight bar support table 613 at a preset loading position, the weight bar The 611 is movable to a preset loading position for loading onto an edge portion of the introduced sample attachment film 30.

Further, when performing tandem deposition or reciprocating deposition, the sample attachment films 30 are sequentially and one-by-one introduced into the weight bar stocker 610. When each sample attachment film 30 is introduced into the weight bar stocker 610, a weight bar 611 is moved up or down and placed on the introduced sample attachment film 30.

Further, the weight bar stocker 610 includes a moving member 612 (hereinafter referred to as "second moving member") and a vacuum chamber 615. When the sample attachment film 30 is introduced, the second moving member 612 moves the weight bar 611 to a preset position, and the weight bar 611 can be moved to the film 30 at a preset position. The vacuum chamber 615 houses a weight bar support table 613, a weight bar lifting member 614, and a second moving member 612.

In addition, the vacuum chamber 615 achieves moving and placing the weight bar 611 on the sample attachment film under vacuum, by eliminating the presence between the weight bar 611 and the sample attachment film 30, or the weight bar 611 and support The air between the blocks 611a, thereby increasing the contact force between the weight bar 611 and the sample attachment film 30, or between the weight bar 611 and the support block 611a.

Further, the internal temperature of the vacuum chamber 615 is lower than the internal temperature of the deposition chamber 110. Specifically, the internal temperature of the vacuum chamber 615 may be substantially room temperature.

That is, since the temperature increase of the weight bar 611 can be avoided, deformation or loss of the sample attachment film 30 can be avoided.

Next, a deposition process performed by a reciprocating deposition system in accordance with an embodiment of the present invention includes a step "a" in which a sample 20 is attached to a surface of the film 30 to form a sample attachment film 30; The film 30 is introduced into the vacuum chamber 615; and the second moving member 612 transfers the sample attachment film 30 to a preset loading position, and the weight bar 611 can be moved to the sample attachment film 30 at a preset position.

Next, in step "b", the weight bar lifting member 614 moves the weight bar support table 613 up and down, and lifts the weight bar 611 and places it on the edge of the sample attachment film 30.

Next, in step "c", the second moving element 612 introduces the sample attachment film 30 and the weight bar 611 placed above into the deposition chamber 110, and the first moving element mounted in the deposition chamber 110 The sample attachment film 30 is received 121 and the sample attachment film 30 is positioned at a preset position.

Next, in step "d", when the sample support table 123 is lifted up or when the sample attachment film 30 is lowered, the sample attachment film 30 is placed on the sample support table 123, and the weight bar 611 attaches the sample. The film 30 is pressed against the sample support table 123 such that the sample attachment film 30 can be in close contact with the sample support table 123. Next, power is supplied to the target 122, and thus the deposition material 122a is dispersed to form a coating layer on the sample 20. Next, after the formation of the coating layer is completed, the sample attachment film 30 is moved in a series or reciprocating manner by the first moving member 121, so that the sample attachment film 30 is unloaded from the deposition chamber 110 that has completed the deposition process, and Introduced into the next deposition chamber.

Alternatively, the coating layer may be a copper layer, a stainless steel layer, or a plurality of layers (at least one of the copper layers and at least one of the stainless steel layers being laminated to each other). The coating layer acts as an EMI shielding layer.

That is, the deposition system according to an embodiment may be a deposition system that forms an EMI shielding coating on a sample (eg, an electronic device). [Seventh embodiment]

Figure 10 is a diagram illustrating a deposition system according to a seventh embodiment. Figure 11 is an exploded perspective view of the seventh embodiment of the present invention illustrating the assembled relationship between the support block of the deposition system and the weight bar stocker and the inner shield.

Referring to FIG. 10, in contrast to the deposition system 600 according to the sixth embodiment of the present invention, the deposition system 700 according to the seventh embodiment is additionally equipped with a weight bar stacker 610 (the weight bar 611 is loaded therein). Internal shield 616 in ).

Further, as shown in FIG. 10, the inner shield 616 may be laminated on the weight bar 611. Alternatively, the inner shield 616 can be stacked under the weight bar 611. In this example, the weight bar 611 is laminated under the inner shield 616.

Further, as shown in FIG. 11, the weight bar 611 is placed on the support block 611a (the support film 30 and the sample 20 attached to the film 30), and the inner shield 616 is placed on the weight bar 611.

Further, the weight bar 611 and the inner shield 616 can be integrally formed as a single object. Alternatively, the weight bar 611 and the inner shield 616 may be formed as separate components and assembled with each other or simply stacked on each other.

On the other hand, when the inner shield 616 is introduced into the deposition chamber 110, it is positioned between the target 122 and the sample support table 123. The inner shield 616 shields a portion of the area between the target 122 and the sample support table 123, thereby limiting the extent of dispersion (the material of the target 122 is interspersed therein).

Further, referring to FIG. 11, the inner shield 616 has an opening 616a at a central portion thereof, and a shield member 616b formed around the opening 616a. The shield member 616b prevents the deposition material from falling therethrough.

That is, material dispersed from the target 122 may fall onto the sample 20 through the opening 616a. However, the deposited material cannot pass through the shield member 616b, but falls and accumulates on the shield member 616b.

Next, a deposition process performed by the deposition system 700 of the seventh embodiment of the present invention will be briefly described with reference to FIG. First at step "a", the support block 611a is attached to the edge portion of the upper surface of the film 30; the sample 20 is attached to the central portion of the film 30; and the sample attachment film 30 is introduced into the vacuum of the weight bar stocker 610 In the chamber 615. Next, the second moving element 612 conveys the sample attachment film 30 to the weight bar loading position, and the weight bar 611 can be loaded onto the sample attachment film 30 at the weight bar loading position.

Next, in step "b", the weight bar lifting member 614 moves the weight bar support table 613 up and down, and places the weight bar 611 and the inner shield 616 on the edge portion of the upper surface of the sample attachment film 30. .

Next, in step "c", the second moving element 612 transfers the sample attachment film 30 (the weight bar 611 and the inner shield 616 are placed above) into the deposition chamber 110 and is mounted in the deposition chamber 110. The first moving element 121 receives the sample attachment film 30 and positions the sample attachment film 30 at a preset position.

Next, in step "d", the sample support table 123 is lifted or the sample attachment film 30 is lowered. Next, the sample attachment film 30 is placed on the upper surface of the sample support table 123, and the weight bar 611 presses the sample attachment film 30 against the sample support table 123 so that the sample attachment film 30 can be attached to the sample support table. 123 close contact. At this time, the internal space of the deposition chamber is divided into: a deposition space 100a, at one side of the inner shield 616 and where the target 122 is disposed; and a non-deposition space 100b, on the other side and where the sample support table 123 is disposed .

Further, since the support block 611a and the weight bar 611 are in contact with each other, the weight bar 611 and the inner shield 616 are in contact with each other, the deposition material 122a scattered from the target 122 is accumulated only on the surfaces of the inner shield 616 and the film 30, without Invades the non-deposited space 100b.

Therefore, it is possible to prevent the deposition material from intruding into the non-deposition space where the deposition is not required (prolonging the cleaning period inside the cleaning deposition chamber 110), thereby increasing the system operation rate and the deposition yield. Industrial utilization

A deposition system in accordance with a preferred embodiment of the present invention can be used to coat the surface of a sample (e.g., an electronic device) with an EMI shielding layer.

10‧‧‧Substrate
11‧‧‧Substrate
12‧‧‧Substrate
20‧‧‧ sample
30‧‧‧film
100‧‧‧Deposition system
100a‧‧‧Sediment space
100b‧‧‧non-depositing space
110‧‧‧Sedimentation chamber
111‧‧‧Mobile components
112‧‧‧ Target
120‧‧‧Sedimentation chamber
121‧‧‧Mobile components
122‧‧‧ Target
122a‧‧‧deposited materials
123‧‧‧Sample support table
123a‧‧‧ upper surface
123b‧‧‧Flow channel
123c‧‧‧ upper surface
130‧‧‧buffer chamber
131‧‧‧Substrate lifting element
131a‧‧‧Substrate moving components
131b‧‧‧Substrate moving components
200‧‧‧Deposition system
210‧‧‧ Lifting chamber
211‧‧‧Substrate lifting element
211a‧‧‧Substrate moving components
211b‧‧‧Substrate moving components
300‧‧‧Deposition system
310‧‧‧heating chamber
311‧‧‧Substrate lifting element
311a‧‧‧Substrate moving components
311b‧‧‧Substrate moving components
320‧‧‧The plasma processing chamber
321‧‧‧Substrate lifting element
321a‧‧‧Substrate moving components
321b‧‧‧Substrate moving components
400‧‧‧Deposition system
410‧‧‧Sedimentation chamber
420‧‧‧buffer chamber
500‧‧‧Deposition system
600‧‧‧Deposition system
610‧‧‧Weighing rod stacker
611‧‧‧weight rod
611a‧‧‧Support block
612‧‧‧Mobile components
613‧‧‧With weight bar support
614‧‧‧Weighing rod lifting element
615‧‧‧vacuum chamber
616a‧‧‧ openings
616b‧‧‧Shielding members
616‧‧‧Internal shielding
700‧‧‧Deposition system
A‧‧‧direction
B‧‧‧direction
R‧‧‧ curvature
W1‧‧‧Width
W2‧‧‧ length
G‧‧‧ Groove

Figure 1 is a plan view showing a deposition system in accordance with a first embodiment of the present invention;

Figure 2 is a plan view showing a deposition system in accordance with a second embodiment of the present invention;

Figure 3 is a plan view showing a deposition system in accordance with a third embodiment of the present invention;

Figure 4 is a plan view showing a deposition system in accordance with a fourth embodiment of the present invention;

Figure 5 is a plan view showing a deposition system in accordance with a fifth embodiment of the present invention;

Figure 6 is a plan view showing a deposition system in accordance with a sixth embodiment of the present invention;

Figure 7 is a schematic view showing a support block and a weight bar of a deposition system according to a sixth embodiment of the present invention;

Figure 8 is a perspective view showing an example of an exemplary support table of a deposition system in accordance with a sixth embodiment of the present invention;

Figure 9 is a plan view showing another example of an exemplary support table of a deposition system in accordance with a sixth embodiment of the present invention;

Figure 10 is a diagram illustrating a deposition system in accordance with a seventh embodiment of the present invention;

Figure 11 is an exploded perspective view of the seventh embodiment of the present invention illustrating the assembled relationship between the support block of the deposition system and the weight bar stocker and the inner shield.

10‧‧‧Substrate

11‧‧‧Substrate

12‧‧‧Substrate

100‧‧‧Deposition system

110‧‧‧Sedimentation chamber

111‧‧‧Mobile components

112‧‧‧ Target

120‧‧‧Sedimentation chamber

121‧‧‧Mobile components

122‧‧‧ Target

130‧‧‧buffer chamber

131‧‧‧Substrate lifting element

131a‧‧‧Substrate moving components

131b‧‧‧Substrate moving components

A‧‧‧direction

B‧‧‧direction

Claims (28)

A reciprocating deposition system comprising: a plurality of deposition chambers connected to each other in a row and performing a deposition process; and a plurality of substrate moving elements mounted in the individual deposition chambers for transporting substrates into and out of the deposition chamber Wherein the plurality of substrates are continuously transferred from one deposition chamber to another deposition chamber in a manner to undergo a deposition process in the corresponding deposition chamber: the substrate is unloaded from the current deposition chamber It is introduced into the next deposition chamber. The reciprocating deposition system of claim 1, wherein each substrate is subjected to a deposition process in each deposition chamber and sequentially transferred from one deposition chamber to another, wherein each substrate returns to the first deposition A chamber (which is the deposition chamber initially introduced into the substrate) is then unloaded from the first deposition chamber. The reciprocating deposition system of claim 2, further comprising a plurality of buffer chambers, each buffer chamber being disposed between the deposition chambers adjacent to each other, the buffer chambers being adjacent to the two deposition chambers The substrates in the chamber are exchanged with each other. The reciprocating deposition system of claim 3, wherein each of the buffer chambers is equipped with a substrate lifting member disposed therein, the substrate lifting member supporting at least two substrates disposed side by side and the substrate upward Or move down to position the substrate at the entrance of the deposition chamber. A reciprocating deposition system according to claim 1, wherein each of the deposition chambers or each of the two deposition chambers is provided with a substrate lifting member that moves the substrate up or down, The substrate is positioned at the entrance of the deposition chamber, whereby the exchange of substrates in the two deposition chambers adjacent to each other is achieved. The reciprocating deposition system of claim 1, further comprising a lifting chamber disposed adjacent to each deposition chamber, supporting at least two substrates disposed side by side thereon, and moving through the upper and lower sides The substrate is positioned at the entrance of the deposition chamber; wherein the substrate is selectively transferred into the deposition chamber for undergoing a deposition process in the deposition chamber. The reciprocating deposition system of any one of claims 1 to 6, further comprising a heating chamber for removing moisture by heating the substrate before the substrate is introduced into the deposition chamber. A reciprocating deposition system according to any one of claims 1 to 6, further comprising a plasma processing chamber for treating the substrate with plasma prior to introduction of the substrate into the deposition chamber to remove organic matter The substrate is removed. The reciprocating deposition system of claim 7, further comprising a plasma processing chamber for treating the substrate with plasma prior to introduction into the deposition chamber to eliminate organic matter. The reciprocating deposition system of claim 9, wherein the substrate is first introduced into the heating chamber; then sequentially transferred to the plasma processing chamber and the deposition chamber; and finally returned to the The chamber is heated and unloaded to the outside. The reciprocating deposition system of claim 9, wherein the deposition chamber comprises a stainless steel film deposition chamber and a copper film deposition chamber, wherein a buffer chamber is disposed in the stainless steel film deposition chamber and the copper film Between the deposition chambers, the stainless steel film deposition chamber and the substrate in the copper film deposition chamber are exchanged with each other; wherein the substrate is conveyed and sequentially passed in the order shown below: the heating chamber, the a plasma processing chamber, the stainless steel thin film deposition chamber, and the copper thin film deposition chamber; and wherein after depositing a copper film on the substrate in the copper thin film deposition chamber, the substrate is transferred as shown below The sequence passes sequentially: the stainless steel film deposition chamber, the plasma processing chamber, and the heating chamber, thereby returning to the heating chamber and unloading to the outside. The reciprocating deposition system of claim 9, wherein the deposition chamber comprises a stainless steel film deposition chamber, a first copper film deposition chamber, and a second copper film deposition chamber, wherein the buffer chambers are respectively disposed at Between the stainless steel film deposition chamber and the first copper film deposition chamber, between the first copper film deposition chamber and the second copper film deposition chamber, to place the substrate in the adjacent deposition chamber Interchanging with each other; wherein the substrate is sequentially passed through in the order shown below: the heating chamber, the plasma processing chamber, the stainless steel film deposition chamber, the first copper film deposition chamber, and the a second copper film deposition chamber; and wherein after the second copper film is deposited on the substrate in the second copper film deposition chamber, the substrate is transferred to sequentially pass in the order shown below: A copper film deposition chamber, the stainless steel film deposition chamber, the plasma processing chamber, and the heating chamber are thereby returned to and unloaded from the heating chamber. The reciprocating deposition system of claim 9, wherein the deposition chamber comprises a stainless steel film deposition chamber, a first copper film deposition chamber, and a second copper film deposition chamber, wherein the buffer chambers are respectively disposed at Between the stainless steel film deposition chamber and the first copper film deposition chamber, between the first copper film deposition chamber and the second copper film deposition chamber, to place the substrate in the adjacent deposition chamber Interchanging with each other; wherein the substrate is sequentially passed through in the order shown below: the heating chamber, the plasma processing chamber, the stainless steel film deposition chamber, the first copper film deposition chamber, and the a second copper film deposition chamber; wherein after depositing a second copper film on the substrate in the second copper film deposition chamber, the substrate is transferred to sequentially pass in the order shown below: the first copper a thin film deposition chamber, the stainless steel film deposition chamber, the plasma processing chamber, and the heating chamber, and then unloaded to the outside; and wherein the second copper film is deposited when the substrate is returned to the heating chamber Sink in the chamber A second copper film is deposited on the substrate, and a second stainless steel film is deposited on the substrate in the stainless steel film deposition chamber. A substrate having at least one stainless steel film and at least one copper film, the stainless steel film and the copper film being deposited on the substrate using a reciprocating deposition system according to any one of claims 1 to 6. . The substrate of claim 14, wherein the stainless steel film and the copper film combine to function as an electromagnetic interference (EMI) shielding film. The reciprocating deposition system of claim 1, wherein the substrate is a film attached to a sample (hereinafter referred to as a "sample attachment film"), the sample is a subject subjected to deposition processing; wherein the deposition chamber is equipped a sample support table supporting the sample attachment film disposed thereon, thereby allowing a coating layer to be deposited on the sample; wherein the reciprocating deposition system further includes a weight bar stacker mounted on a prior stage of the deposition chamber in which a weight bar is loaded, the weight bar being placed on the sample attachment film before the sample attachment film is introduced into the deposition chamber, such that the weight bar will A sample attachment film is pressed against the sample support table to achieve that the sample attachment film is in intimate contact with the sample support table when the sample attachment film is placed on the sample support table. The reciprocating deposition system of claim 16, wherein the weight bar stacker is equipped with a moving element that unidirectionally transfers the sample attachment film from the weight bar stacker to the deposition chamber Transferring the sample attachment film from the weight bar stacker to the deposition chamber bi-directionally, and transferring from the deposition chamber to the weight bar stacker after the coating layer is deposited on the sample . The reciprocating deposition system of claim 17, wherein a plurality of the sample attachment films are sequentially introduced into the weight bar stacker and subsequently introduced into the deposition chamber; wherein the weight bar stacker A weight bar support table is provided that supports the weight bars that are disposed side by side and are to be placed on each sample attachment film. The reciprocating deposition system of claim 18, wherein the weight bar stacker is equipped with a weight bar lifting element that moves the weight bar support table up and down and is disposed on the weight bar support table The upper weight bar moves onto the edge portion of the upper surface of the sample attachment film. The reciprocating deposition system of claim 19, wherein the weight bar stacker comprises a vacuum chamber for accommodating the weight bar support table and the weight bar lifting element for use in a vacuum state The weight bar is moved onto an edge portion of the upper surface of the sample attachment film. A reciprocating deposition system according to claim 20, wherein the internal temperature of the vacuum chamber is lower than the internal temperature of the deposition chamber. The reciprocating deposition system of claim 16, wherein a support block having a frame shape is attached to an edge portion of an upper surface of the sample attachment film, thereby maintaining a shape of the sample attachment film; The weight bar is placed on the support block. The reciprocating deposition system of claim 16, wherein the weight bar stacker is further provided with an inner shield stacked on the weight bar or above the weight bar stacker, and The weight bars are moved together to an edge portion of the upper surface of the sample attachment film; and wherein the inner shield limits the extent of the dispersion in which the deposition material is dispersed in the deposition chamber. The reciprocating deposition system of any one of claims 16 to 23, wherein the upper surface of the sample support table is a curved surface. The reciprocating deposition system of claim 24, wherein an upper surface area of the sample support table is smaller than an upper surface area of the sample attachment film; and wherein the weight bar is spaced apart from an edge portion of the sample support table The sample attachment film is pressed such that the sample attachment film is in intimate pressure contact with the upper surface of the sample support table. The reciprocating deposition system of any one of claims 16 to 23, wherein the coating layer is a copper film, a stainless steel film, or a combination of at least one copper film and at least one stainless steel film. A reciprocating deposition system according to claim 26, wherein the coating layer functions as an electromagnetic interference (EMI) shielding film. A device for coating a coating layer deposited by using a reciprocating deposition system according to any one of claims 16 to 23.