TW201724453A - Electronic package and its manufacturing method - Google Patents
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- TW201724453A TW201724453A TW104142676A TW104142676A TW201724453A TW 201724453 A TW201724453 A TW 201724453A TW 104142676 A TW104142676 A TW 104142676A TW 104142676 A TW104142676 A TW 104142676A TW 201724453 A TW201724453 A TW 201724453A
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Abstract
Description
本發明係有關一種電子封裝件之製法,尤指一種具有屏蔽結構之電子封裝件及其製法。 The invention relates to a method for manufacturing an electronic package, in particular to an electronic package having a shielding structure and a method for manufacturing the same.
隨著電子產業的蓬勃發展,電子產品也逐漸邁向多功能、高性能的趨勢。為了滿足電子封裝件微型化(miniaturization)的封裝需求,係發展出晶圓級封裝(Wafer Level Packaging,簡稱WLP)的技術。 With the rapid development of the electronics industry, electronic products are gradually moving towards multi-functional and high-performance trends. In order to meet the packaging requirements of miniaturization of electronic packages, Wafer Level Packaging (WLP) technology has been developed.
第1A至1E圖係為習知晶圓級半導體封裝件1之製法之剖面示意圖。 1A to 1E are schematic cross-sectional views showing the fabrication of a conventional wafer level semiconductor package 1.
如第1A圖所示,形成一熱化離形膠層(thermal release tape)11於一承載件10上。 As shown in FIG. 1A, a thermal release tape 11 is formed on a carrier 10.
接著,置放複數半導體元件12於該熱化離形膠層11上,該些半導體元件12具有相對之主動面12a與非主動面12b,各該主動面12a上均具有複數電極墊120,且各該主動面12a黏著於該熱化離形膠層11上。 Next, a plurality of semiconductor elements 12 are disposed on the thermalizing release layer 11, the semiconductor elements 12 having opposite active surfaces 12a and inactive surfaces 12b, each of which has a plurality of electrode pads 120 thereon, and Each of the active faces 12a is adhered to the heated release layer 11.
如第1B圖所示,形成一封裝膠體13於該熱化離形膠層11上,以包覆該半導體元件12。 As shown in FIG. 1B, an encapsulant 13 is formed on the thermal release layer 11 to coat the semiconductor element 12.
如第1C圖所示,烘烤該封裝膠體13以硬化該熱化離 形膠層11而移除該熱化離形膠層11與該承載件10,使該半導體元件12之主動面12a外露。 Baking the encapsulant 13 to harden the thermalization as shown in FIG. 1C The adhesive layer 11 removes the heated release layer 11 and the carrier 10 to expose the active surface 12a of the semiconductor component 12.
如第1D圖所示,形成一線路結構14於該封裝膠體13與該半導體元件12之主動面12a上,令該線路結構14電性連接該半導體元件12之電極墊120。接著,形成一絕緣保護層15於該線路結構14上,且該絕緣保護層15外露該線路結構14之部分表面,以供結合如銲球之導電元件16。 As shown in FIG. 1D, a wiring structure 14 is formed on the encapsulant 13 and the active surface 12a of the semiconductor component 12, so that the wiring structure 14 is electrically connected to the electrode pad 120 of the semiconductor component 12. Next, an insulating protective layer 15 is formed on the wiring structure 14, and the insulating protective layer 15 exposes a part of the surface of the wiring structure 14 for bonding the conductive elements 16 such as solder balls.
如第1E圖所示,沿如第1D圖所示之切割路徑L進行切單製程,以獲取複數個半導體封裝件1。 As shown in FIG. 1E, a singulation process is performed along the dicing path L as shown in FIG. 1D to obtain a plurality of semiconductor packages 1.
惟,習知半導體封裝件1於運作時,因其不具電磁干擾(Electromagnetic interference,簡稱EMI)屏蔽(shielding)的結構,故容易遭受到外界之電磁干擾(EMI),導致該半導體封裝件1的電性運作功能不正常,因而影響整體該半導體封裝件1的電性效能。 However, the conventional semiconductor package 1 is susceptible to electromagnetic interference (EMI) from the outside because it does not have an electromagnetic interference (EMI) shielding structure during operation, resulting in the semiconductor package 1 The electrical operation function is abnormal, thus affecting the overall electrical performance of the semiconductor package 1.
因此,如何克服上述習知技術的種種問題,實已成目前亟欲解決的課題。 Therefore, how to overcome the various problems of the above-mentioned prior art has become a problem that is currently being solved.
鑑於上述習知技術之種種缺失,本發明係提供一種電子封裝件,係包括:絕緣層,係具有相對之第一表面與第二表面;電子元件,係嵌埋於該絕緣層中並外露於該絕緣層之第一表面;線路結構,係形成於該絕緣層之第一表面與該電子元件上且電性連接該電子元件;導電體,係嵌埋於該絕緣層中並外露於該絕緣層之第二表面;以及導電層,係形成於該絕緣層之第二表面上並接觸該導電體,以 令該導電體與該導電層作為屏蔽結構。 In view of the above-mentioned various deficiencies of the prior art, the present invention provides an electronic package comprising: an insulating layer having opposite first and second surfaces; electronic components embedded in the insulating layer and exposed a first surface of the insulating layer; a line structure formed on the first surface of the insulating layer and electrically connected to the electronic component; the electrical conductor embedded in the insulating layer and exposed to the insulating a second surface of the layer; and a conductive layer formed on the second surface of the insulating layer and contacting the electrical conductor to The conductor and the conductive layer are used as a shielding structure.
本發明復提供一種電子封裝件之製法,係包括:提供一嵌埋有電子元件之絕緣層,其中,該絕緣層具有相對之第一表面與第二表面,且該電子元件外露於該絕緣層之第一表面;形成線路結構於該絕緣層之第一表面與該電子元件上,以令該線路結構電性連接該電子元件;於該絕緣層之第二表面上形成穿孔;形成導電體於該穿孔中;以及形成導電層於該絕緣層之第二表面上,以令該導電層接觸該導電體,使該導電體與該導電層作為屏蔽結構。 The invention provides a method for manufacturing an electronic package, comprising: providing an insulating layer embedded with electronic components, wherein the insulating layer has opposite first and second surfaces, and the electronic component is exposed to the insulating layer a first surface; a line structure is formed on the first surface of the insulating layer and the electronic component to electrically connect the circuit structure to the electronic component; a through hole is formed on the second surface of the insulating layer; And forming a conductive layer on the second surface of the insulating layer such that the conductive layer contacts the conductive body, and the conductive body and the conductive layer serve as a shielding structure.
前述之電子封裝件及其製法中,該電子元件具有相對之主動面與非主動面,且該電子元件以其主動面電性連接該線路結構。又,該導電層復接觸該電子元件之非主動面。 In the foregoing electronic package and method of manufacturing the same, the electronic component has an opposite active surface and a non-active surface, and the electronic component is electrically connected to the wiring structure by an active surface thereof. Moreover, the conductive layer is in contact with the inactive surface of the electronic component.
前述之電子封裝件及其製法中,該導電體係為電鍍金屬、填充材料或導電膠。 In the foregoing electronic package and the method of manufacturing the same, the conductive system is an electroplated metal, a filler material or a conductive paste.
前述之電子封裝件及其製法中,該導電體與該導電層之間具有交界面。 In the above electronic package and method of manufacturing the same, the conductor has an interface with the conductive layer.
前述之電子封裝件及其製法中,該導電體連通該絕緣層之第一與第二表面。 In the above electronic package and method of manufacturing the same, the electrical conductor communicates with the first and second surfaces of the insulating layer.
前述之電子封裝件及其製法中,該導電體電性連接該線路結構。 In the foregoing electronic package and method of manufacturing the same, the electrical conductor is electrically connected to the line structure.
由上可知,本發明之電子封裝件及其製法,係藉由該導電體與該導電層之設計,使該電子元件外圍覆蓋有屏蔽結構,以於運作該電子封裝件時,該電子元件不會遭受外界之電磁干擾,故相較於習知技術,本發明之電子封裝件 的電性運作功能得以正常運作,而該電子封裝件的電性效能不會受到影響。 As can be seen from the above, the electronic package of the present invention and the method for manufacturing the same are characterized in that the periphery of the electronic component is covered with a shielding structure, so that when the electronic package is operated, the electronic component is not Will suffer from external electromagnetic interference, so the electronic package of the present invention is compared with the prior art. The electrical operation function is functioning properly, and the electrical performance of the electronic package is not affected.
1‧‧‧半導體封裝件 1‧‧‧Semiconductor package
10,20‧‧‧承載件 10,20‧‧‧Carrier
11‧‧‧熱化離形膠層 11‧‧‧heating release layer
12‧‧‧半導體元件 12‧‧‧Semiconductor components
12a,22a‧‧‧主動面 12a, 22a‧‧‧ active surface
12b,22b‧‧‧非主動面 12b, 22b‧‧‧ inactive surface
120,220‧‧‧電極墊 120,220‧‧‧electrode pads
13‧‧‧封裝膠體 13‧‧‧Package colloid
14,24‧‧‧線路結構 14,24‧‧‧Line structure
15,222‧‧‧絕緣保護層 15,222‧‧‧Insulating protective layer
16,26‧‧‧導電元件 16,26‧‧‧ conductive elements
2,2’,3,3’‧‧‧電子封裝件 2,2’,3,3’‧‧‧electronic packages
2a‧‧‧屏蔽結構 2a‧‧‧Shielding structure
21‧‧‧離形層 21‧‧‧Fractal layer
22‧‧‧電子元件 22‧‧‧Electronic components
221‧‧‧導電凸塊 221‧‧‧Electrical bumps
23‧‧‧絕緣層 23‧‧‧Insulation
23a‧‧‧第一表面 23a‧‧‧ first surface
23b‧‧‧第二表面 23b‧‧‧ second surface
230‧‧‧穿孔 230‧‧‧Perforation
240‧‧‧介電層 240‧‧‧ dielectric layer
241‧‧‧線路層 241‧‧‧Line layer
242‧‧‧導電盲孔 242‧‧‧ Conductive blind holes
243‧‧‧凸塊底下金屬層 243‧‧‧ Metal layer under the bump
27‧‧‧導電體 27‧‧‧Electrical conductor
28‧‧‧導電層 28‧‧‧ Conductive layer
L‧‧‧切割路徑 L‧‧‧ cutting path
S‧‧‧交界面 S‧‧‧ interface
第1A至1E圖係為習知半導體封裝件之製法之剖面示意圖;第2A至2F圖係本發明之電子封裝件之製法之剖面示意圖;其中,第2A’及2A”圖係第2A圖之另一實施例,第2B’圖係第2B圖之另一實施例,第2F’圖係第2F圖之另一實施例;以及第3及3’圖係本發明之電子封裝件之另一實施例。 1A to 1E are schematic cross-sectional views showing a method of fabricating a conventional semiconductor package; FIGS. 2A to 2F are schematic cross-sectional views showing a method of manufacturing an electronic package of the present invention; wherein 2A' and 2A' are diagrams of FIG. 2A In another embodiment, FIG. 2B′ is another embodiment of FIG. 2B, and FIG. 2F′ is another embodiment of FIG. 2F; and FIGS. 3 and 3′ are another embodiment of the electronic package of the present invention. Example.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上”、“第一”、“第二”、及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本 發明可實施之範疇。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper", "first", "second", "one" and "the" are used in the description, and are not intended to limit the scope of the invention. Changes or adjustments in their relative relationship, which are also considered to be The scope of the invention can be implemented.
第2A至2F圖係為本發明之電子封裝件2之製法的剖面示意圖。 2A to 2F are schematic cross-sectional views showing the manufacturing method of the electronic package 2 of the present invention.
如第2A圖所示,提供一具有離形層21之承載件20,且將複數電子元件22設於該承載件20上。 As shown in FIG. 2A, a carrier 20 having a release layer 21 is provided, and a plurality of electronic components 22 are disposed on the carrier 20.
於本實施例中,該電子元件22係為主動元件、被動元件或其組合者,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。例如,該電子元件22係為主動元件,其具有相對之主動面22a及非主動面22b,並以其非主動面22b設置於該離形層21上,且該主動面22a具有複數電極墊220。 In this embodiment, the electronic component 22 is an active component, a passive component, or a combination thereof, and the active component is, for example, a semiconductor wafer, and the passive component is, for example, a resistor, a capacitor, and an inductor. For example, the electronic component 22 is an active component having an opposite active surface 22a and an inactive surface 22b, and is disposed on the release layer 21 with its inactive surface 22b, and the active surface 22a has a plurality of electrode pads 220. .
再者,亦可如第2A’圖所示,該電極墊220上形成如銅柱或錫球之導電凸塊221,且該主動面22a上設有一絕緣保護層222,使該絕緣保護層222覆蓋該些電極墊220與該些導電凸塊221。或者,如第2A”圖所示,亦可令該導電凸塊221外露於該絕緣保護層222,例如,該導電凸塊221之端面與該絕緣保護層222之表面齊平。 Further, as shown in FIG. 2A', the electrode pad 220 is formed with a conductive bump 221 such as a copper post or a solder ball, and the active surface 22a is provided with an insulating protective layer 222 to make the insulating protective layer 222. The electrode pads 220 and the conductive bumps 221 are covered. Alternatively, as shown in FIG. 2A, the conductive bump 221 may be exposed to the insulating protective layer 222. For example, the end surface of the conductive bump 221 is flush with the surface of the insulating protective layer 222.
如第2B圖所示,接續第2A圖之製程,形成一絕緣層23於該承載件20上,且該絕緣層23包覆該電子元件22之周圍。 As shown in FIG. 2B, following the process of FIG. 2A, an insulating layer 23 is formed on the carrier 20, and the insulating layer 23 covers the periphery of the electronic component 22.
於本實施例中,形成該絕緣層23之材質係為模封材(molding compound)、乾膜材(dry film)、線路增層材或光阻材(photoresist),例如,該乾膜材係以貼合方式形成,該光阻材係以塗佈方式形成。 In the present embodiment, the material forming the insulating layer 23 is a molding compound, a dry film, a line build-up material or a photoresist, for example, the dry film system It is formed in a bonding manner, and the photoresist is formed by coating.
再者,該絕緣層23具有相對之第一表面23a與第二表面23b,且該絕緣層23以其第二表面23b結合該離形層21,並使該電子元件22之主動面22a外露於該絕緣層23之第一表面23a。 Furthermore, the insulating layer 23 has a first surface 23a and a second surface 23b opposite thereto, and the insulating layer 23 is bonded to the release layer 21 by the second surface 23b thereof, and the active surface 22a of the electronic component 22 is exposed. The first surface 23a of the insulating layer 23.
又,若接續第2A’圖之製程,如第2B’圖所示,形成該絕緣層23後,以令該絕緣層23包覆該電子元件22,再藉由整平製程,令該絕緣保護層222與該導電凸塊221外露於該絕緣層23之第一表面23a。具體地,該整平製程係藉由研磨方式,移除該絕緣層23之部分材質與該絕緣保護層222之部分材質(依需求,可移除該導電凸塊221之部分材質)。 Further, if the process of FIG. 2A is continued, as shown in FIG. 2B', after the insulating layer 23 is formed, the insulating layer 23 is coated with the electronic component 22, and the insulating process is performed by a leveling process. The layer 222 and the conductive bump 221 are exposed on the first surface 23a of the insulating layer 23. Specifically, the leveling process removes a portion of the material of the insulating layer 23 and a portion of the material of the insulating protective layer 222 by grinding (a portion of the conductive bump 221 may be removed as needed).
應可理解地,若接續第2A”圖之製程,移除該絕緣保護層222之部分材質,即可令該些導電凸塊221外露於該絕緣層23之第一表面23a(依需求,可移除該絕緣保護層222之部分材質與該導電凸塊221之部分材質),如第2B’圖所示。 It should be understood that, if the process of the 2A" is continued, part of the material of the insulating protective layer 222 is removed, so that the conductive bumps 221 are exposed on the first surface 23a of the insulating layer 23 (on request, A portion of the material of the insulating protective layer 222 and a portion of the conductive bump 221 are removed, as shown in FIG. 2B'.
如第2C圖所示,進行線路重佈層(Redistribution layer,簡稱RDL)製程,以形成一線路結構24於該絕緣層23之第一表面23a與該電子元件22之主動面22a上,且該線路結構24電性連接該電子元件22。接著,移除該承載件20與該離形層21,以外露該絕緣層23之第二表面23b與該電子元件22之非主動面22b。 As shown in FIG. 2C, a redistribution layer (RDL) process is performed to form a line structure 24 on the first surface 23a of the insulating layer 23 and the active surface 22a of the electronic component 22, and the The line structure 24 is electrically connected to the electronic component 22. Next, the carrier 20 and the release layer 21 are removed, and the second surface 23b of the insulating layer 23 and the inactive surface 22b of the electronic component 22 are exposed.
於本實施例中,該線路結構24係包含至少一介電層240、設於該介電層240上之線路層241、及設於該介電層 240中並電性連接該線路層241的複數導電盲孔242,最內側之線路層241電性連接該些電極墊220,且於最外側之線路層241上具有凸塊底下金屬層(Under Bump Metallurgy,簡稱UBM)243,供後續製程中接置其它外部元件。 In this embodiment, the circuit structure 24 includes at least one dielectric layer 240, a circuit layer 241 disposed on the dielectric layer 240, and a dielectric layer disposed on the dielectric layer The plurality of conductive blind vias 242 are electrically connected to the circuit layer 241. The innermost circuit layer 241 is electrically connected to the electrode pads 220, and has a bump under metal layer on the outermost circuit layer 241 (Under Bump) Metallurgy (UBM) 243 for other external components in subsequent processes.
如第2D圖所示,以雷射製程於該絕緣層23之第二表面23b上形成複數穿孔230,以令該穿孔230連通該絕緣層23之第一表面23a與第二表面23b。 As shown in FIG. 2D, a plurality of through holes 230 are formed on the second surface 23b of the insulating layer 23 by a laser process so that the through holes 230 communicate with the first surface 23a and the second surface 23b of the insulating layer 23.
如第2E圖所示,形成複數導電體27於該些穿孔230中,其中,該導電體27呈柱狀。 As shown in FIG. 2E, a plurality of electrical conductors 27 are formed in the plurality of vias 230, wherein the electrical conductors 27 are columnar.
於本實施例中,該導電體27係為電鍍金屬、填充材料或導電膠,且該導電體27可電性連接或不電性連接該線路層241。 In this embodiment, the electrical conductor 27 is a plating metal, a filling material or a conductive adhesive, and the electrical conductor 27 can be electrically connected or not electrically connected to the wiring layer 241.
如第2F圖所示,形成一導電層28於該絕緣層23之第二表面23b與該導電體27上,以令該導電體27與該導電層28作為一供該電子元件22所用之屏蔽結構2a。接著,沿如第2E圖所示之切割路徑L進行切單製程,以形成複數電子封裝件2。另外可形成複數如含有銲錫材料或金屬凸塊之導電元件26於該線路結構24之凸塊底下金屬層243上,以供該電子封裝件2接置其它如電路板、封裝基板或導線架等之電子裝置(圖略)。 As shown in FIG. 2F, a conductive layer 28 is formed on the second surface 23b of the insulating layer 23 and the conductive body 27, so that the conductive body 27 and the conductive layer 28 serve as a shield for the electronic component 22. Structure 2a. Next, a singulation process is performed along the dicing path L as shown in FIG. 2E to form a plurality of electronic packages 2. In addition, a plurality of conductive elements 26 including solder materials or metal bumps may be formed on the under bump metal layer 243 of the circuit structure 24 for the electronic package 2 to be connected to other such as a circuit board, a package substrate or a lead frame. Electronic device (figure omitted).
於本實施例中,該導電層28係以電鍍、濺鍍(sputter)或設置金屬片等方式,其形成材質係為金屬或非金屬(如石墨)之導電材質,且該導電體27與該導電層28係分別 由兩個不同製程所製作,使該導電體27與該導電層28之間會產生一交界面S。 In this embodiment, the conductive layer 28 is formed by electroplating, sputtering, or metal sheeting, and the conductive material is made of metal or non-metal (such as graphite), and the conductive body 27 is Conductive layer 28 is respectively Manufactured by two different processes, an interface S is created between the conductor 27 and the conductive layer 28.
再者,該導電層28係接觸該導電體27與該電子元件22之非主動面22b。較佳者,該導電層28覆蓋該電子元件22之全部非主動面22b。 Moreover, the conductive layer 28 contacts the conductive body 27 and the inactive surface 22b of the electronic component 22. Preferably, the conductive layer 28 covers all of the inactive faces 22b of the electronic component 22.
又,若接續第2B’圖之製程,將得到如第2F’圖所示之電子封裝件2’。 Further, when the process of Fig. 2B' is continued, the electronic package 2' as shown in Fig. 2F' will be obtained.
另外,於其它實施例中,如第3及3’圖所示,單一電子封裝件3,3’包括複數電子元件22。應可理解地,各該電子元件22之間可間隔有至少一導電體27,如第3’圖所示。 Additionally, in other embodiments, as shown in Figures 3 and 3', the single electronic package 3, 3' includes a plurality of electronic components 22. It should be understood that each of the electronic components 22 may be separated by at least one electrical conductor 27 as shown in Fig. 3'.
本發明之製法藉由形成該導電體27與該導電層28,使該電子元件22外圍覆蓋有屏蔽結構2a,故該電子封裝件2,2’,3,3’於運作時,該電子元件22不會遭受外界之電磁干擾(EMI),因而該電子封裝件2,2’,3,3’的電性運作功能得以正常,進而不會影響整體該電子封裝件2,2’,3,3’的電性效能。 The method of the present invention forms the conductive body 27 and the conductive layer 28 such that the periphery of the electronic component 22 is covered with the shielding structure 2a, so when the electronic package 2, 2', 3, 3' is in operation, the electronic component 22 will not be subjected to external electromagnetic interference (EMI), so that the electrical operation function of the electronic package 2, 2', 3, 3' is normal, and thus does not affect the overall electronic package 2, 2', 3, 3' electrical performance.
再者,該屏蔽結構2a經由該線路結構24之線路層241、導電盲孔242及導電元件26接地。或者,當該電子封裝件2,2’,3,3’接置於如電路板、封裝基板或導線架等之電子裝置(圖略)後,該屏蔽結構2a藉由打線方式(圖略)接地至該電子裝置。 Furthermore, the shielding structure 2a is grounded via the wiring layer 241 of the wiring structure 24, the conductive blind vias 242, and the conductive elements 26. Alternatively, after the electronic package 2, 2', 3, 3' is placed on an electronic device (not shown) such as a circuit board, a package substrate or a lead frame, the shielding structure 2a is connected by a wire (not shown) Ground to the electronic device.
本發明復提供一種電子封裝件2,2’,3,3’,係包括:一絕緣層23、至少一電子元件22、一線路結構24、複數導電體27、以及一導電層28。 The invention further provides an electronic package 2, 2', 3, 3' comprising an insulating layer 23, at least one electronic component 22, a wiring structure 24, a plurality of electrical conductors 27, and a conductive layer 28.
所述之絕緣層23係具有相對之第一表面23a與第二表面23b。 The insulating layer 23 has opposite first and second surfaces 23a, 23b.
所述之電子元件22係嵌埋於該絕緣層23中並外露於該絕緣層23之第一表面23a。 The electronic component 22 is embedded in the insulating layer 23 and exposed on the first surface 23a of the insulating layer 23.
所述之線路結構24係形成於該絕緣層23之第一表面23a與該電子元件22上且電性連接該電子元件22。 The circuit structure 24 is formed on the first surface 23a of the insulating layer 23 and the electronic component 22 and electrically connected to the electronic component 22.
所述之導電體27係嵌埋於該絕緣層23中並外露於該絕緣層23之第二表面23b。 The conductor 27 is embedded in the insulating layer 23 and exposed on the second surface 23b of the insulating layer 23.
所述之導電層28係形成於該絕緣層23之第二表面23b上並接觸各該導電體27,以令該導電體27與該導電層28作為屏蔽結構2a。 The conductive layer 28 is formed on the second surface 23b of the insulating layer 23 and contacts each of the conductive bodies 27 such that the conductive body 27 and the conductive layer 28 serve as the shielding structure 2a.
於一實施例中,該電子元件22具有相對之主動面22a與非主動面22b,且該電子元件22以其主動面22a電性連接該線路結構24,並使該導電層28復接觸該電子元件22之非主動面22b。 In one embodiment, the electronic component 22 has an opposite active surface 22a and an inactive surface 22b, and the electronic component 22 is electrically connected to the wiring structure 24 by its active surface 22a, and the conductive layer 28 is in contact with the electronic component. The inactive surface 22b of the element 22.
於一實施例中,該導電體27係為電鍍金屬、填充材料或導電膠。 In one embodiment, the electrical conductor 27 is an electroplated metal, a filler material, or a conductive paste.
於一實施例中,各該導電體27與該導電層28之間具有一交界面S。 In an embodiment, each of the conductors 27 and the conductive layer 28 has an interface S.
綜上所述,本發明之電子封裝件及其製法,主要藉由該導電體與該導電層作為屏蔽結構,以於運作該電子封裝件時,能避免該電子元件遭受外界之電磁干擾,故該電子封裝件的電性運作功能得以正常運作,而該電子封裝件的電性效能不會受到影響。 In summary, the electronic package of the present invention and the manufacturing method thereof mainly use the conductive body and the conductive layer as a shielding structure to prevent the electronic component from being subjected to external electromagnetic interference when the electronic package is operated. The electrical operation function of the electronic package is functioning normally, and the electrical performance of the electronic package is not affected.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
2‧‧‧電子封裝件 2‧‧‧Electronic package
2a‧‧‧屏蔽結構 2a‧‧‧Shielding structure
22‧‧‧電子元件 22‧‧‧Electronic components
22b‧‧‧非主動面 22b‧‧‧Inactive surface
23‧‧‧絕緣層 23‧‧‧Insulation
23a‧‧‧第一表面 23a‧‧‧ first surface
23b‧‧‧第二表面 23b‧‧‧ second surface
24‧‧‧線路結構 24‧‧‧Line structure
243‧‧‧凸塊底下金屬層 243‧‧‧ Metal layer under the bump
26‧‧‧導電元件 26‧‧‧Conductive components
27‧‧‧導電體 27‧‧‧Electrical conductor
28‧‧‧導電層 28‧‧‧ Conductive layer
S‧‧‧交界面 S‧‧‧ interface
Claims (14)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104142676A TW201724453A (en) | 2015-12-18 | 2015-12-18 | Electronic package and its manufacturing method |
| CN201610008029.3A CN106898599A (en) | 2015-12-18 | 2016-01-06 | Electronic package and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
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| TW104142676A TW201724453A (en) | 2015-12-18 | 2015-12-18 | Electronic package and its manufacturing method |
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| TW201724453A true TW201724453A (en) | 2017-07-01 |
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| US7651889B2 (en) * | 2007-09-13 | 2010-01-26 | Freescale Semiconductor, Inc. | Electromagnetic shield formation for integrated circuit die package |
| CN103904062B (en) * | 2012-12-28 | 2017-04-26 | 欣兴电子股份有限公司 | Embedded electronic component packaging structure |
| CN103887256B (en) * | 2014-03-27 | 2017-05-17 | 江阴芯智联电子科技有限公司 | High-cooling-performance chip-embedded type electromagnetic shielding encapsulating structure and manufacturing method thereof |
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