TW201703286A - Light emitting device and manufacturing method thereof - Google Patents

Abstract

A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Description

Light emitting device and manufacturing method thereof

The present invention relates to a light-emitting device and a method of fabricating the same, and more particularly to a light-emitting device using a light-emitting diode as a light source and a method of fabricating the same.

In general, the LED package structure generally comprises disposing a light-emitting diode wafer on a concave cup-type carrier base formed of a ceramic material or a metal material to fix and support the LED chip. Then, the packaged colloid is used to cover the LED chip, and the fabrication of the LED package structure is completed. At this time, the electrodes of the light-emitting diode wafer are located above the carrier base and are located in the concave cup. However, the recessed cup type of the carrier base has a certain thickness, so that the thickness of the light emitting diode package structure cannot be effectively reduced, so that the light emitting diode package structure cannot meet the needs of today's thinning.

The present invention provides a light-emitting device that can have a thin package thickness and meet the requirements for thinning without using a conventional carrier bracket.

The present invention provides a method of fabricating a light-emitting device for fabricating the above-described light-emitting device.

The light emitting device of the present invention comprises a wavelength conversion layer, at least one light emitting unit and a reflective protection member. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has a two electrode pad, and the two electrode pads are located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protection member covers at least a portion of the light emitting unit and the partial wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

In an embodiment of the invention, the light emitting device further includes: a light transmissive layer disposed on the wavelength conversion layer and located between the light emitting unit and the reflective protection member.

In an embodiment of the invention, the light transmissive layer is disposed between the wavelength conversion layer and the light emitting unit.

In an embodiment of the invention, the reflective protection member further includes a reflective surface in contact with the light emitting unit.

In an embodiment of the invention, the reflective surface of the reflective protection member is a plane or a curved surface.

In an embodiment of the invention, the reflective protection member completely covers one side of the wavelength conversion layer.

In an embodiment of the invention, a bottom surface of the reflective protection member forms a plane with a lower surface of the wavelength conversion layer.

In an embodiment of the invention, the reflective protection member further covers at least a portion of a side of the wavelength conversion layer.

In an embodiment of the invention, the side surface of the portion of the wavelength conversion layer not covered by the reflective protection member and the side surface of the reflective protection member form a plane of one side of the light-emitting device.

In an embodiment of the invention, the wavelength conversion layer further includes a first exposed side portion and a second exposed side portion that are not covered by the reflective protection member. The first exposed side portion is not parallel to the second exposed side portion, and the thickness of the wavelength converting layer at the first exposed side portion is different from the thickness of the wavelength converting layer at the second exposed side portion.

In an embodiment of the invention, the wavelength conversion layer further includes a low concentration phosphor layer and a high concentration phosphor layer, and the high concentration phosphor layer is between the low concentration phosphor layer and the light emitting unit.

In an embodiment of the invention, the reflective protection member is filled in a gap between the two electrode pads.

In an embodiment of the invention, the reflective protection member completely fills the gap between the two electrode pads and a surface of the reflective protection member is aligned with a surface of the two electrode pads.

In an embodiment of the invention, the at least one light emitting unit is a plurality of light emitting units, and the wavelength conversion layer has at least one trench between the two light emitting units.

A method of fabricating a light-emitting device of the present invention includes the following steps. Providing a wavelength conversion layer; arranging a plurality of spaced-apart light-emitting units on the wavelength conversion layer and exposing the two-electrode pads of each of the light-emitting units; forming a plurality of trenches on the wavelength conversion layer, wherein the trenches are located in the light-emitting unit Forming a reflective protection member on the wavelength conversion layer and between the light emitting cells and filling the trenches, wherein the reflective protection member exposes the electrode pads of the light emitting unit; and performing a cutting process along the trench to form a plurality of light emitting Device.

In an embodiment of the invention, each of the grooves has a depth of at least half of a thickness of the wavelength conversion layer.

In an embodiment of the invention, the method for fabricating the light-emitting device further includes: forming a light-transmitting layer on the wavelength conversion layer after arranging the light-emitting units arranged at intervals on the wavelength conversion layer.

In an embodiment of the invention, the method for fabricating the light-emitting device further includes: forming a light-transmitting layer on the wavelength conversion layer before arranging the spaced-apart light-emitting units on the wavelength conversion layer.

In an embodiment of the invention, the reflective protection member further includes a reflective surface in contact with the light emitting unit.

In an embodiment of the invention, the reflective surface of the reflective protection member is a plane or a curved surface.

In an embodiment of the invention, the wavelength conversion layer further includes a low concentration phosphor layer and a high concentration phosphor layer, and the light emitting unit is disposed on the high concentration phosphor layer.

Based on the above, the reflective protection member of the present invention covers the side surface of the light emitting unit, and the bottom surface of the reflective protection member is aligned with the first bottom surface of the first electrode pad of the light emitting unit and the second bottom surface of the second electrode pad. Therefore, the light-emitting device of the present invention not only does not need to use a conventional carrier bracket to support and fix the light-emitting unit, but can effectively reduce the package thickness and the manufacturing cost, and can also effectively improve the forward light-emitting efficiency of the light-emitting unit.

The above described features and advantages of the invention will be apparent from the following description.

FIG. 1 is a schematic diagram of a light emitting device according to an embodiment of the invention. Referring to FIG. 1 , in the embodiment, the light emitting device 100 a includes a light emitting unit 110 a and a reflective protection member 120 . The light emitting unit 110a has an upper surface 112a and a lower surface 114a opposite to each other, a side surface 116a connecting the upper surface 112a and the lower surface 114a, and a first electrode pad 113 and a second electrode on the lower surface 114a and separated from each other. Pad 115. The reflective protection member 120 covers the side surface 116a of the light emitting unit 110a and exposes at least a portion of the upper surface 112a and at least a portion of the first bottom surface 113a exposing the first electrode pad 113 and at least a portion of the second bottom surface of the second electrode pad 115. 115a.

More specifically, as shown in FIG. 1 , the upper surface 112 a of the light-emitting unit 110 a of the present embodiment is aligned with a top surface 122 of the reflective protection member 120 , and a bottom surface 124 of the reflective protection member 120 and the first electrode pad 113 are A first bottom surface 113a and a second bottom surface 115a of the second electrode pad 115 are aligned, and the reflective protection member 120 can cover or expose the light emitting unit 110a under the first electrode pad 113 and a second electrode pad 115. Surface 114a. In this embodiment, the side surface 116a of the light emitting unit 110a is perpendicular to the upper surface 112a and the lower surface 114a, but not limited thereto, and the light emitting unit 110a is, for example, a light emitting diode, and the light emitting wavelength of the light emitting diode ( Including, but not limited to, between 315 nm and 780 nm, the light emitting diode includes, but is not limited to, ultraviolet light, blue light, green light, yellow light, orange light, or red light emitting diode.

The reflection protection member 120 has a reflectance of at least 90%, that is, the reflection protection member 120 of the embodiment has a high reflectivity characteristic, wherein the reflective protection member 120 is made of a polymer material doped with highly reflective particles. The highly reflective particles are, for example but not limited to, titanium dioxide (TiO ₂ ) powder, and the polymer material is, for example, not limited to epoxy resin or resin. In addition, the material of the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110a of the present embodiment is a metal material or a metal alloy, such as gold, aluminum, tin, silver, antimony, indium or a combination thereof, but not This is limited to this.

In this embodiment, the reflective protection member 120 covers the side surface 116a of the light emitting unit 110a, and exposes the first bottom surface 113a of the first electrode pad 113 of the light emitting unit 110a and the second bottom surface 115a of the second electrode pad 115, and emits light. The device 100a does not need to use a conventional carrier bracket to support and fix the light emitting unit 110a, and can effectively reduce the package thickness and the manufacturing cost. At the same time, the reflective member 120 with high reflectivity can also effectively improve the positive of the light emitting unit 110a. To the light efficiency.

It is to be noted that the following embodiments use the same reference numerals and parts in the foregoing embodiments, wherein the same reference numerals are used to refer to the same or similar elements, and the description of the same technical content can refer to the foregoing embodiments, the following embodiments The details are not repeated.

2 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Referring to FIG. 1 and FIG. 2 simultaneously, the main difference between the illuminating device 100b of the present embodiment and the illuminating device 100a of FIG. 1 is that the side surface 116b of the illuminating unit 110b of the present embodiment is not perpendicular to the upper surface 112b and the lower side. The surface 114b, the surface area of the upper surface 112b of the light emitting unit 100b in this embodiment is larger than the surface area of the lower surface 114b, and the angle between the side surface 116b and the lower surface 114b is, for example, between 95 degrees and 150 degrees. The outer contours defined by the upper surface 112b, the side surface 116b and the lower surface 114b of the light emitting unit 110b of the present embodiment have an inverted trapezoidal shape, so that the lateral light emission of the light emitting unit 110b can be reduced, and the reflective protector 120 with high reflectivity can be further The forward light extraction efficiency of the light emitting unit 110b is further effectively improved.

FIG. 3 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Referring to FIG. 1 and FIG. 3 simultaneously, the main difference between the illuminating device 100c of the present embodiment and the illuminating device 100a of FIG. 1 is that the illuminating device 100c of the embodiment further includes a first extending electrode 130c and a second The electrode 140c is extended. The first extension electrode 130c is disposed on the bottom surface 124 of the reflective protection member 120 and electrically connected to the first electrode pad 113. The second extension electrode 140c is disposed on the bottom surface 124 of the reflective protection member 120 and electrically connected to the second electrode pad 115. The first extension electrode 130c and the second extension electrode 140c are separated from each other and cover at least a portion of the bottom surface 124 of the reflective protector 120.

As shown in FIG. 3, the arrangement of the first extension electrode 130c and the second extension electrode 140c of the present embodiment completely overlaps the first electrode pad 113 and the second electrode pad 115, and extends toward the edge of the reflective protection member 120. Of course, in other embodiments not shown, the arrangement of the first extension electrode and the second extension electrode may partially overlap the first electrode pad and the second electrode pad as long as the first extension electrode and the second extension electrode are electrically connected. The arrangement of the first electrode pad and the second electrode pad is the range to be protected by the embodiment. In addition, the first extension electrode 130c and the second extension electrode 140c of the embodiment expose a portion of the bottom surface 124 of the reflective protection member 120.

In this embodiment, the materials of the first extension electrode 130c and the second extension electrode 140c may be the same or different from the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110a, respectively. When the materials of the first extension electrode 130c and the second extension electrode 140c are the same as the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110a, respectively, the first extension electrode 130c and the first electrode pad 113 may be The seam connection is an integrally formed structure, and the second extension electrode 140c and the second electrode pad 115 can be seamlessly connected, that is, an integrally formed structure. When the materials of the first extension electrode 130c and the second extension electrode 140c are different from the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110a, respectively, the materials of the first extension electrode 130c and the second extension electrode 140c may be, for example, Silver, gold, bismuth, tin, indium or an alloy of the above materials.

Since the light-emitting device 100c of the present embodiment has the first extension electrode 130c and the second extension electrode 140c electrically connected to the first electrode pad 113 and the second electrode pad 115 of the light-emitting unit 110a, respectively, the light-emitting device 100c can be effectively increased. The electrode contact area is convenient for subsequent assembly of the light-emitting device 100c with other external circuits, which can effectively improve alignment accuracy and assembly efficiency. For example, the area of the first extension electrode 130c is larger than the area of the first electrode pad 113, and the area of the second extension electrode 140c is larger than the area of the second electrode pad 115.

FIG. 4 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Referring to FIG. 3 and FIG. 4 simultaneously, the main difference between the light-emitting device 100d of the present embodiment and the light-emitting device 100c of FIG. 3 is that the edge of the first extended electrode 130d and the edge of the second extended electrode 140d of the present embodiment It is aligned with the edge of the reflective protector 120.

FIG. 5 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Referring to FIG. 1 and FIG. 5 simultaneously, the main difference between the illuminating device 100e of the present embodiment and the illuminating device 100a of FIG. 1 is that the illuminating device 100e of the embodiment further includes an encapsulant layer 150, wherein the encapsulant layer 150 is disposed on the upper surface 112a of the light emitting unit 110a to increase the light extraction rate and improve the light pattern. The encapsulant layer 150 may also extend onto at least a portion of the upper surface 122 of the reflective protector 120, and the edge of the encapsulant layer 150 may also be aligned to the edge of the reflective protector 120. In addition, the encapsulating layer 150 may also be doped with at least one wavelength converting material for converting the wavelength of at least part of the light emitted by the light emitting unit 110a into other wavelengths, and the material of the wavelength converting material includes fluorescent light. Materials, phosphorescent materials, dyes, quantum dot materials, and combinations thereof, wherein the wavelength conversion material has a particle size of, for example, between 3 microns and 50 microns. In addition, the encapsulant layer 150 may also be doped with an oxide having high scattering ability, such as titanium dioxide (TiO ₂ ) or cerium oxide (SiO ₂ ), to increase light extraction efficiency.

In an embodiment of the invention, the light emitting unit includes, but is not limited to, ultraviolet light, blue light, green light, yellow light, orange light or red light emitting unit, and the wavelength converting material includes but is not limited to red, orange, orange, yellow. A yellow-green or green wavelength converting material or a combination thereof for wavelength-converting part or all of the light emitted by the light-emitting unit. After the wavelength-converted light is mixed with the wavelength-unconverted light, the light-emitting device emits a dominant wavelength, which includes, but is not limited to, red, orange, orange, and amber. , yellow, yellow-green or green, or emit white light with a specific relative color temperature, the relative color temperature range is, for example, between 2500K and 7000K, but not limited thereto.

FIG. 6 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Referring to FIG. 6 and FIG. 4, the main difference between the illuminating device 100f of the present embodiment and the illuminating device 100d of FIG. 4 is that the illuminating device 100f of the embodiment further includes an encapsulant layer 150, wherein the encapsulant layer 150 is disposed on the upper surface 112a of the light emitting unit 110a to increase the light extraction rate and improve the light pattern. The encapsulant layer 150 can also extend to at least a portion of the upper surface 122 of the reflective protection member 120. The edge of the encapsulation layer 150 can also be aligned with the edge of the reflective protection member 120. In addition, the encapsulant layer 150 can also be doped with At least one wavelength converting material, the wavelength converting material is used to convert the wavelength of at least part of the light emitted by the light emitting unit 110a into other wavelengths, and the material of the wavelength converting material comprises a fluorescent material, a phosphorescent material, a dye, a quantum dot material and Combinations wherein the wavelength conversion material has a particle size of, for example, between 3 microns and 50 microns. In addition, the encapsulant layer 150 may also be doped with an oxide having high scattering ability, such as titanium dioxide (TiO ₂ ) or cerium oxide (SiO ₂ ), to increase light extraction efficiency.

It should be noted that, in the embodiment of FIG. 4 and FIG. 6, the edge of the first extension electrode 130d and the edge of the second extension electrode 140d are aligned with the edge of the reflective protection member 120. Such a design can not only expand the contact of the electrode. The area, and in the process, the reflective protection member 120 can simultaneously package a plurality of spaced apart light emitting units 110a, and then form a patterned metal layer to form the first extended electrode 130d and the second extended electrode 140d, respectively, and then cut, so that The edge of the first extension electrode 130d of each of the light-emitting devices 100f is aligned with the edge of the second extension electrode 140d at the edge of the reflective protection member 120, so that the process time can be effectively saved.

FIG. 7 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Referring to FIG. 7 and FIG. 5 simultaneously, the main difference between the illuminating device 100g of the present embodiment and the illuminating device 100e of FIG. 5 is that the illuminating device 100g of the embodiment further includes a light transmissive layer 160 disposed on the encapsulant. On the layer 150, the light transmittance of the light transmissive layer 160 is, for example, greater than 50%. In this embodiment, the material of the light transmissive layer 160 is, for example, glass, ceramic, resin, acryl or silicone, etc., and the purpose is that the light generated by the light-emitting unit 110a is guided to the outside, and the light-emitting device 100g can be effectively increased. The luminous flux and the light extraction rate can also effectively protect the light emitting unit 110a from being affected by external moisture and oxygen.

FIG. 8 is a schematic diagram of a light emitting device according to another embodiment of the present invention. The main difference between the light-emitting device 100h of the present embodiment and the light-emitting device 100g of FIG. 7 is that the light-transmitting layer 160' of the light-emitting device 100h of the present embodiment is disposed in the light-emitting unit 110a. Between the upper surface 110a and the encapsulant layer 150.

FIG. 9 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Referring to FIG. 9 and FIG. 6 , the main difference between the illuminating device 100 i of the present embodiment and the illuminating device 100 f of FIG. 6 is that the illuminating device 100 i of the embodiment further includes a light transmissive layer 160 disposed on the encapsulant. On the layer 150, the light transmittance of the light transmissive layer 160 is, for example, greater than 50%. In this embodiment, the material of the light-transmitting layer 160 is, for example, glass, ceramic, resin, acrylic, silicone, etc., and the purpose is that the light generated by the light-emitting unit 110a is guided to the outside, and the light-emitting device 100i can be effectively increased. The luminous flux and the light extraction rate can also effectively protect the light emitting unit 110a from being affected by external moisture and oxygen.

Hereinafter, the light-emitting devices 100a, 100g, 100d, and 100i in FIGS. 1, 7, 4, and 9 will be taken as an example, and 10A to 10D, 11A to 11C, 12A to 12E, and 13A, respectively. A method of fabricating the light-emitting device of the present invention will be described in detail with reference to Fig. 13D.

10A-10D are schematic cross-sectional views showing a method of fabricating a light-emitting device according to an embodiment of the invention. First, referring to FIG. 10A, a plurality of light emitting units 110a are disposed on a substrate 10, wherein each of the light emitting units 110a has an upper surface 112a and a lower surface 114a opposed to each other, and a side surface 116a connecting the upper surface 112a and the lower surface 114a. And a first electrode pad 113 and a second electrode pad 115 on the lower surface 114a and separated from each other. The first electrode pad 113 and the second electrode pad 115 of each of the light emitting units 110a are disposed on the substrate 10. That is, the light emitting surface of the light emitting unit 110a, that is, the upper surface 112a is relatively distant from the substrate 10. In the present embodiment, the material of the substrate 10 is, for example, stainless steel, ceramic or other non-conductive material. The light emitting unit 110a is, for example, a light emitting diode, and the light emitting wavelength of the light emitting diode (including but not limited to) is between 315 nm and 780 nm, and the light emitting diode includes but is not limited to ultraviolet light, blue light, and green light. , yellow, orange or red light emitting diodes.

Next, referring to FIG. 10B, a reflective protection member 120' is formed on the substrate 10, wherein the reflective protection member 120' covers each of the light emitting units 110a. That is, the reflective protection member 120' completely and directly covers the upper surface 112a, the lower surface 114a, and the side surface 116a of the light emitting unit 110a, and fills the gap between the first electrode pad 113 and the second electrode pad 115. Here, the reflectance of the reflective protection member 120' is at least greater than 90%, that is, the reflective protection member 120' of the present embodiment can have a high reflectivity characteristic, wherein the material of the reflective protective member 120' includes a high doping level. The polymer material of the reflective particles, such as, but not limited to, titanium dioxide (TiO ₂ ) powder, and the polymer material is not limited to, for example, an epoxy resin or a ruthenium resin.

Next, referring to FIG. 10C, the partial reflection protector 120' is removed to form the reflective protector 120, wherein the reflective protector 120 exposes at least a portion of the upper surface 112a of each of the light emitting units 110a. At this time, the upper surface 112a of each of the light emitting units 110a may be aligned with the top surface 122 of the reflective protector 120. Here, the method of removing the partial reflection protector 120' includes, for example, a grinding method or a polishing method.

Thereafter, referring to FIG. 10D, a cutting process is performed to cut the reflective protector 120 along the cutting line L to form a plurality of light emitting devices 100a separated from each other, wherein each of the light emitting devices 100a has at least one light emitting unit 110a and a reflection, respectively. The protective member 120, the reflective protector 120 covers the side surface 116a of the light emitting unit 110a and exposes at least a portion of the upper surface 112a thereof.

Finally, referring again to FIG. 10D, the substrate 10 is removed to expose the bottom surface 124 of the reflective protection member 120 of each of the light emitting devices 100a, and expose at least a portion of the first bottom surface 113a of the first electrode pad 113 of each of the light emitting devices 100a. And at least a portion of the second bottom surface 115a of the second electrode pad 115.

11A-11C are schematic cross-sectional views showing a partial step of a method of fabricating a light emitting device according to another embodiment of the present invention. The main difference between the manufacturing method of the light-emitting device of the present embodiment and the manufacturing method of the light-emitting device of the above-mentioned FIG. 10A to FIG. 10D is that between the steps of FIG. 10C and FIG. 10D, that is, the partial reflection protection member is removed. After 120', and before performing the cutting process, referring to FIG. 11A, an encapsulant layer 150 is formed on the light emitting unit 110a and the reflective protection member 120 to increase the light extraction rate and improve the light pattern. Here, the encapsulant layer 150 covers the upper surface 112a of the light emitting unit 110a and the top surface 122 of the reflective protector 120, and the encapsulant layer 150 may also be doped with at least one wavelength converting material. For a description of the wavelength converting material, please refer to the previous embodiment. In addition, the encapsulant layer 150 may also be doped with an oxide having high scattering ability, such as titanium dioxide (TiO ₂ ) or cerium oxide (SiO ₂ ), to increase light extraction efficiency.

Next, referring to FIG. 11B, a light transmissive layer 160 is formed on the light emitting unit 110a and the reflective protection member 120. The light transmissive layer 160 is disposed on the encapsulant layer 150 and covers the encapsulant layer 150. For example, the light transmissive layer 160 has a light transmittance greater than 50%. In this embodiment, the material of the light transmissive layer 160 is, for example, glass, ceramic, resin, acryl or silicone, etc., and the purpose is that the light generated by the light-emitting unit 110a is guided to the outside, which can effectively increase the subsequent formation. The light-emitting unit 100g has a luminous flux and a light extraction rate, and can also effectively protect the light-emitting unit 110a from external moisture and oxygen.

Thereafter, referring to FIG. 11C, a cutting process is performed to cut the light transmissive layer 160, the encapsulant layer 150, and the reflective protector 120 along the cutting line L to form a plurality of light emitting devices 100g separated from each other. Finally, referring back to FIG. 11C, the substrate 10 is removed to expose the bottom surface 124 of the reflective protection member 120 of each of the light-emitting devices 100g, wherein the bottom surface 124 of the reflective protection member 120 of each of the light-emitting devices 100g exposes the first electrode pad 113. At least a portion of the first bottom surface 113a and at least a portion of the second bottom surface 115a of the second electrode pad 115. In another embodiment of the present invention, the substrate 10 may be removed first and then a cutting process may be performed.

12A to 12E are schematic cross-sectional views showing a method of fabricating a light-emitting device according to another embodiment of the present invention. Referring to FIG. 12A, the main difference between the method for fabricating the light-emitting device of the present embodiment and the method for fabricating the light-emitting device of FIG. 10A to FIG. 10D is that, referring to FIG. 12A, the light-emitting unit 110a of the present embodiment is not The substrate 10 is contacted by the first electrode pad 113 and the second electrode pad 115, but the substrate 10 is contacted by the upper surface 112a thereof.

Next, referring to FIG. 12B, a reflective protection member 120' is formed on the substrate, wherein the reflective protection member covers each of the light emitting units 110a.

Next, referring to FIG. 12C, the partial reflection protection member 120' is removed to form the reflection protection member 120, wherein the reflection protection member 120 exposes at least a portion of the first bottom surface 113a of the first electrode pad 113 of each of the light emitting units 110a and At least a portion of the second bottom surface 115a of the two electrode pads 115.

Next, referring to FIG. 12D, a patterned metal layer is formed as the extended electrode layer E on the first bottom surface 113a of the first electrode pad 113 of each of the light emitting units 110a and the second bottom surface 115a of the second electrode pad 115. Here, the method of forming the patterned metal layer is, for example, an evaporation method, a sputtering method, a plating method or an electroless plating method, and a mask etching method.

Next, referring to FIG. 12E, a cutting process is performed to cut the extended electrode layer E and the reflective protector 120 along the cutting line to form a plurality of light emitting devices 100d separated from each other. Each of the light emitting devices 100d has at least one light emitting unit 110a, a reflective protection member 120 covering at least the side surface 116a of the light emitting unit 110a, a first extended electrode 130d directly contacting the first electrode pad 113, and a direct contact with the second electrode pad 115. The second extension electrode 140d. The first extension electrode 130d and the second extension electrode 140d are separated from each other and expose at least a portion of the bottom surface 124 of the reflective protector 120. At this time, the area of the first extension electrode 130d may be larger than the area of the first electrode pad 113, and the area of the second extension electrode 140d may be larger than the area of the second electrode pad 115. An edge of the first extension electrode 130d is aligned with an edge of the second extension electrode 140d at an edge of the reflective protector 120.

Finally, referring again to FIG. 12E, the substrate 10 is removed to expose the top surface 122 of the reflective protection member 120 of each of the light emitting devices 100d and the upper surface 112a of the light emitting unit 110a, wherein the reflective protection member 120 of each of the light emitting devices 100g The top surface 122 is aligned with the upper surface 112a of the light emitting unit 110a. In another embodiment of the present invention, the substrate 10 may be removed first and then a cutting process may be performed.

13A-13D are cross-sectional views showing a partial step of a method of fabricating a light emitting device according to another embodiment of the present invention. The main difference between the manufacturing method of the light-emitting device of the present embodiment and the above-described manufacturing method of the light-emitting device of FIGS. 12A to 12E is that between the steps of FIG. 12D and FIG. 12E, that is, after the formation of the extended electrode layer E Before performing the cutting process, referring to FIG. 13A, another substrate 20 is provided and disposed on the extended electrode layer E. Here, the material of the other substrate 20 is, for example, stainless steel, ceramic or other non-conductive material. Next, referring again to FIG. 13A, after providing another substrate 20, the substrate 10 is removed to expose the top surface 122 of the reflective protection member 120 and the upper surface 112a of the light emitting unit 110a, wherein the upper surface 112a of each of the light emitting units 110a The top surface 122 of the reflective protector 120 is aligned.

Next, referring to FIG. 13B, an encapsulant layer 150 is formed on the light emitting unit 110a and the reflective protection member 120 to increase the light extraction rate and improve the light pattern. Here, the encapsulant layer 150 covers the upper surface 112a of the light emitting unit 110a and the top surface 122 of the reflective protector 120, and the encapsulant layer 150 may also be doped with at least one wavelength converting material. For a description of the wavelength converting material, please refer to the previous embodiment. In addition, the encapsulant layer 150 may also be doped with an oxide having high scattering ability, such as titanium dioxide (TiO ₂ ) or cerium oxide (SiO ₂ ), to increase light extraction efficiency.

Next, referring to FIG. 13C, a light transmissive layer 160 is formed on the light emitting unit 110a and the reflective protection member 120. The light transmissive layer 160 is disposed on the encapsulant layer 150 and covers the encapsulant layer 150. For example, the light transmissive layer 160 has a light transmittance greater than 50%. Here, the material of the light transmissive layer 160 is, for example, glass, ceramic, resin, acrylic or silicone, and the like, the purpose is that the light generated by the light-emitting unit 110a is guided to the outside, and the subsequent formation of the light-emitting unit can be effectively increased. The light flux and light extraction rate of the light structure 100i can also effectively protect the light emitting unit 110a from being affected by external moisture and oxygen.

Thereafter, referring to FIG. 13D, a cutting process is performed to cut the light transmissive layer 160, the encapsulant layer 150, the reflective protector 120, and the extended electrode layer E along the cutting line L to form a plurality of light emitting devices 100i separated from each other. Finally, referring again to FIG. 13D, another substrate 20 is removed to expose the first extended electrode 130d and the second extended electrode 140d of each of the light emitting devices 100i. In another embodiment of the present invention, the substrate 20 may be removed first and then a cutting process may be performed.

14A to 14E are schematic cross-sectional views showing a method of fabricating a light-emitting device according to another embodiment of the present invention. Referring to FIG. 14A, a wavelength conversion adhesive layer 170 is provided. The wavelength conversion adhesive layer 170 includes a low concentration phosphor layer 174 and a high concentration phosphor layer 172 on the low concentration phosphor layer 174. Here, the step of forming the wavelength conversion adhesive layer 170 is, for example, firstly mixing the dopant with the colloid (that is, uniformly mixing the liquid or molten colloid with the wavelength converting material, and the wavelength converting material is, for example, fluorescent powder but not For example, to form the wavelength conversion adhesive layer 170, and then the wavelength conversion adhesive layer 170 is allowed to stand for a period of time, for example, after 24 hours of sedimentation, the upper and lower layers of the high concentration phosphor layer 172 and the low concentration phosphor layer are formed. 174. That is to say, the wavelength conversion layer 170 of the present embodiment is exemplified by two adhesive layers. Of course, in other embodiments, referring to FIG. 14A', a wavelength conversion adhesive layer 170' is provided, wherein the wavelength conversion adhesive layer 170' is a single adhesive layer, which is still within the scope of the present invention.

Next, referring to FIG. 14B, a plurality of spaced-apart light-emitting units 110c are disposed on the wavelength conversion adhesive layer 170, wherein each of the light-emitting units 110c has an upper surface 112c and a lower surface 114c opposite to each other, and a connecting upper surface 112c and a side surface 116c of the lower surface 114c and a first electrode pad 113 and a second electrode pad 115 on the lower surface 114c and separated from each other, and the upper surface 112c of the light emitting unit 110c is located at a high concentration of fluorescence of the wavelength conversion adhesive layer 170 On the glue layer 172. Then, a plurality of transparent adhesive layers 150c including a transparent colloid are formed on the wavelength conversion adhesive layer 170 and extend to the side surface 116c of the light emitting unit 110c, wherein the transparent adhesive layer 150c does not completely cover the light emitting unit 110c. The side surface 116c, but as shown in FIG. 14B, the light-transmitting adhesive layer 150c has a curvature slope, and is closer to the upper surface 112c of the light-emitting unit 110c, that is, close to the wavelength conversion adhesive layer 170, and the thickness of the light-transmitting adhesive layer 150c is higher. thick. Here, the purpose of the light-transmitting adhesive layer 150c is to fix the position of the light-emitting unit 110c.

It should be noted that, in other embodiments, please refer to FIG. 14B′, and before the light-emitting units 110 c arranged on the wavelength conversion adhesive layer 170 are disposed on the wavelength conversion adhesive layer 170 , an uncured material and transparent light containing the transparent colloid may be formed. The glue layer 150c' is on the wavelength conversion adhesive layer 170. After the light-emitting units 110c are arranged on the wavelength conversion adhesive layer 170, the light-transmitting adhesive layer 150c' can be disposed between the light-emitting unit 110c and the high-concentration phosphor layer 172.

Next, referring to FIG. 14B and FIG. 14C simultaneously, after the transparent layer 150c' is cured, a first cutting process is performed to cut the wavelength conversion adhesive layer 170 to form a plurality of cells 101 separated from each other, wherein each unit 101 Each has at least one light emitting unit 110c and a wavelength conversion adhesive layer 170 disposed on the upper surface 112c of the light emitting unit 110c, and both side edges 171 of the wavelength conversion adhesive layer 170 of each unit 101 extend to the side surface 116c of the light emitting unit 110c. outer. Next, referring again to FIG. 14C, the cells 101 arranged at intervals are disposed on a substrate 10. In the present embodiment, the material of the substrate 10 is, for example, stainless steel, ceramic or other non-conductive material, which is not limited herein.

Thereafter, referring to FIG. 14D, a reflective protection member 120c is formed on the substrate 10 and covers the side surface 116c of the light emitting unit 110c of each unit 101 and the edge 171 of the wavelength conversion adhesive layer 170. Here, the reflective protection member 120c is formed by, for example, dispensing, wherein the reflective protection member 120c directly covers the transparent adhesive layer 150c and extends along the transparent adhesive layer 150c to cover the edge of the wavelength conversion adhesive layer 170. 171. The orthographic projection of the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110c on the substrate 10 does not overlap the orthographic projection of the reflective protector 120c on the substrate 10. Here, the reflective protection member 120c is, for example, a white rubber layer.

Finally, referring to FIG. 14D and FIG. 14E simultaneously, a second cutting process is performed to cut the reflective protector 120c, and the substrate 10 is removed to form a plurality of light emitting devices 100j separated from each other. Each of the light-emitting devices 100j has at least one light-emitting unit 101 and a reflection protector 120c that covers the side surface 116c of the light-emitting unit 110c and the edge 171 of the wavelength conversion adhesive layer 170. After the substrate 10 is removed, a top surface 122c of the reflective protection member 120c of each of the light-emitting devices 100j and a top surface 173 of the wavelength conversion adhesive layer 170 are exposed. In another embodiment of the present invention, the substrate 10 may be removed first and then a cutting process may be performed. So far, the fabrication of the light-emitting device 100j has been completed.

Structurally, referring to FIG. 14E, the light-emitting device 100j of the present embodiment includes a light-emitting unit 110c, a reflective protection member 120c, a light-transmitting adhesive layer 150c, and a wavelength conversion adhesive layer 170. The wavelength conversion adhesive layer 170 is disposed on the upper surface 112c of the light emitting unit 110c, wherein the wavelength conversion adhesive layer 170 includes a low concentration phosphor layer 174 and a high concentration phosphor layer 172, and the high concentration phosphor layer 172 is at a low concentration. The phosphor layer 174 is between the light emitting unit 110c and the edge 171 of the wavelength converting adhesive layer 170 extends beyond the side surface 116c of the light emitting unit 110c. Here, the low-concentration phosphor layer 174 can be used as a light-transmissive protective layer to increase the water-gas transmission path and effectively prevent moisture from penetrating. The light-transmitting adhesive layer 150c is disposed between the side surface 116c of the light-emitting unit 110c and the reflective protection member 120c for fixing the position of the light-emitting unit 110c. The reflective protection member 120c of the present embodiment is further coated on the edge 171 of the wavelength conversion adhesive layer 170 along the transparent adhesive layer 150c covering the side surface 116c of the light emitting unit 110c. Therefore, the light emitting device 100j of the embodiment does not need to be used. The conventional carrier bracket supports and fixes the light emitting unit 110c, and the package thickness and the manufacturing cost can be effectively reduced. At the same time, the forward light-emitting efficiency of the light-emitting unit 110c can be effectively improved by the reflective protection member 120c having high reflectivity. Here, the top surface 122c of the reflective protection member 120c is embodied to be aligned with the top surface 173 of the wavelength conversion adhesive layer 170.

15A-15E are schematic cross-sectional views showing a method of fabricating a light emitting device according to another embodiment of the present invention. Referring to FIG. 15A, a first release film 30 is provided. Next, a wavelength conversion adhesive layer 170a is provided on the first release film 30. The wavelength conversion adhesive layer 170a may be a single adhesive layer or a multilayer adhesive layer. In this embodiment, the wavelength conversion adhesive layer 170a includes a low concentration phosphor layer 174a and a high concentration phosphor layer 172a on the low concentration phosphor layer 174a. Here, the step of forming the wavelength conversion adhesive layer 170a is, for example, first forming the wavelength conversion adhesive layer 170a by mixing the dopant with the colloid, and then standing the wavelength conversion adhesive layer 170a for a period of time, such as after 24 hours, forming a low separation. The concentration phosphor layer 172a and the high concentration phosphor layer 174a. Here, the first release film 30 is, for example, a double-sided adhesive film.

Next, referring to FIG. 15A, a plurality of spaced-apart light-emitting units 110c are disposed on the wavelength conversion adhesive layer 170A, wherein each of the light-emitting units 110c has an upper surface 112c and a lower surface 114c opposite to each other, and a connecting upper surface 112c. A first electrode pad 113 and a second electrode pad 115 are disposed on the lower surface 114c and a first electrode pad 113 and a second electrode pad 115 on the lower surface 114c, and the upper surface 112c of the light emitting unit 110c is located at a high concentration of the wavelength conversion adhesive layer 170a. On the photo-adhesive layer 172a. Here, the adjacent two light emitting units 110c have a pitch G, and the pitch G is, for example, 700 micrometers. Then, a plurality of transparent adhesive layers 150c are formed on the side surface 116c of the light emitting unit 110c, respectively, wherein the transparent adhesive layer 150c does not completely cover the side surface 116c of the light emitting unit 110c, but is transparent as shown in FIG. 15B. The glue layer 150c has a curvature slope, and the closer to the upper surface 112c of the light-emitting unit 110c, the thicker the thickness of the light-transmitting glue layer 150c. Here, the purpose of the light-transmitting adhesive layer 150c is to fix the position of the light-emitting unit 110c.

Next, referring to FIG. 15B, a first cutting process is performed to cut the high concentration phosphor layer 172a and the portion of the low concentration phosphor layer 174a to form a plurality of trenches C. As shown in Fig. 15B, the first cutting process does not completely cut off the wavelength conversion adhesive layer 170a, but only cuts the high concentration phosphor layer 172a and cuts the portion of the low concentration phosphor layer 174a. Here, the width W of the trench C is, for example, 400 μm, and the depth D of the trench C is, for example, half the thickness T of the wavelength conversion adhesive layer 170a. The thickness T of the wavelength conversion adhesive layer 170a is, for example, 140 micrometers, and the depth D of the trench C is, for example, 70 micrometers. At this time, the position of the groove C and the position of the encapsulant layer 150c do not interfere with each other.

Then, referring to FIG. 15C, a reflective protection member 120d is formed on the low concentration phosphor layer 174a and covers the side surface 116c of the light emitting unit 110c, wherein the reflective protection member 120d fills the trench C and exposes the light emitting unit 110c. The first electrode pad 113 and the second electrode pad 115. Here, the reflective protection member 120d is, for example, a white glue layer.

Finally, referring to FIG. 15D and FIG. 15E, the first release layer 30 is removed, and a second release layer 40 is provided to bring the first electrode pad 113 of the light emitting unit 110c into contact with the second electrode pad 115. Type film 40. Here, the second release layer 40 is, for example, a UV glue or a double-sided tape. Next, a second cutting process is performed to cut the reflective protector 120d and the low-concentration phosphor layer 174a along the extending direction of the trench C (ie, the extending direction of the cutting line L in the pattern 15D) to form a plurality of Light emitting devices 100k that are separated from each other. Each of the light-emitting devices 100k has at least one light-emitting unit 110c, a wavelength conversion adhesive layer 170a disposed on the upper surface 112c of the light-emitting unit 110c, and a reflective protection member 120d covering the side surface 116c of the light-emitting unit 110c. In this embodiment, the wavelength conversion adhesive layer 170a includes a high concentration phosphor layer 172a and a low concentration phosphor layer 174a. Here, the edge 171a of the low concentration phosphor layer 174a of the wavelength conversion layer 170a is aligned. The edge 121 of the protective member 120d is reflected, and the reflective protector 120d further covers the edge 173a of the high-concentration phosphor layer 172a. The second release layer 40 is removed to complete the fabrication of the light emitting device 100k.

Structurally, referring to FIG. 15E, the light emitting device 100k of the present embodiment includes a light emitting unit 110c, a reflective protection member 120d, a light transmissive adhesive layer 150c, and a wavelength conversion adhesive layer 170a. The wavelength conversion adhesive layer 170a is disposed on the upper surface 112c of the light emitting unit 110c, wherein the wavelength conversion adhesive layer 170a includes a low concentration phosphor layer 174a and a high concentration phosphor layer 172a, and the high concentration phosphor layer 172a is at a low concentration. The phosphor layer 174a is interposed between the light emitting unit 110c and the edge 171a of the wavelength converting adhesive layer 170a extends beyond the side surface 116c of the light emitting unit 110c. Here, the low-concentration phosphor layer 174 can be used as a light-transmissive protective layer to increase the water-gas transmission path and effectively prevent moisture from penetrating. The light-transmitting adhesive layer 150c is disposed between the side surface 116c of the light-emitting unit 110c and the reflective protection member 120d for fixing the position of the light-emitting unit 110c. The reflective protection member 120d of the present embodiment is further coated on both side edges 173a of the high-concentration phosphor layer 172a of the wavelength conversion adhesive layer 170a along the light-transmitting adhesive layer 150c covering the side surface 116c of the light-emitting unit 110c. The light-emitting device 100k of the present embodiment does not need to use a conventional carrier bracket to support and fix the light-emitting unit 110c, and can effectively reduce the package thickness and the manufacturing cost. At the same time, the forward light-emitting efficiency of the light-emitting unit 110c can be effectively improved by the reflective protection member 120d having high reflectivity. In addition, the low-concentration phosphor layer 174a of the wavelength conversion adhesive layer 170a of the present embodiment covers a top surface 122d of the reflective protector 120d. That is, the edge 173a of the high-concentration phosphor layer 172a of the wavelength conversion adhesive layer 170a of the present embodiment is not aligned with the edge 171a of the low-concentration phosphor layer 174a.

In other embodiments, referring to FIG. 16A, the light-emitting device 100m of the present embodiment is similar to the light-emitting device 100j of FIG. 14E, except that the reflective protection member 120m of the present embodiment completely fills the first electrode pad 113 and a gap S between the second electrode pads 114 and completely covering a first side surface 113b of the first electrode pad 113 and a second side surface 115b of the second electrode pad 115, and a bottom surface 124m of the reflective protection member 120m is aligned The first bottom surface 113a of the first electrode pad 113 and the second bottom surface 115a of the second electrode pad 115. In this way, it is possible to avoid the occurrence of light leakage at the bottom of the light-emitting device 100m. In addition, the reflective protection member 120m is completely coated on both side edges of the wavelength conversion adhesive layer 170a. In addition, the light-emitting device 100m of the present embodiment does not need to use a conventional carrier bracket to support and fix the light-emitting unit 110c, and can effectively reduce the shielding property 120m. Package thickness and manufacturing cost.

Alternatively, please refer to FIG. 16B, the light-emitting device 100n of the present embodiment is similar to the light-emitting device 100k of FIG. 16A, and the difference is that the reflective protection member 120n of the present embodiment is filled in the first electrode pad 113 and the second electrode pad. The gap S between 114 is not completely filled, and the reflective protector 120n covers only a portion of the first side surface 113b of the first electrode pad 113 and a portion of the second side surface 115b of the second electrode pad 115. In other words, a bottom surface 124n of the reflective protection member 120n has a height difference H between the first bottom surface 113a of the first electrode pad 113 and the second bottom surface 115a of the second electrode pad 115. Alternatively, please refer to FIG. 16C, the light-emitting device 100p of the present embodiment is similar to the light-emitting device 100n of FIG. 16B, and the difference is that the first electrode pad 113' and the second electrode pad 115' are embodied as The multilayer metal layer is composed of the first metal layer M1 and the second metal layer M2, but is not limited thereto. The reflective protection member 120p completely covers the side surfaces of the first metal layer M1 of the first electrode pad 113' and the second electrode pad 115, but does not completely cover the second metal of the first electrode pad 113' and the second electrode pad 115'. The side surface of layer M2. In short, the first electrode pads 113, 113' and the second electrode pads 115, 115' of the light emitting units 110c, 110c' of the light emitting devices 100m, 100n, 100p may be a single metal layer or a plurality of metal layers, and Limit it.

17A-17E are cross-sectional views showing a method of fabricating a light emitting device according to an embodiment of the invention. With regard to the manufacturing method of the light-emitting device of the present embodiment, first, referring to FIG. 17A, a wavelength conversion adhesive layer 210 is provided. The wavelength conversion adhesive layer 210 can be a single adhesive layer or a multi-layer adhesive layer, and the wavelength conversion in this embodiment. The glue layer 210 includes a low concentration phosphor layer 212 and a high concentration phosphor layer 214 on the low concentration phosphor layer 212. Here, the step of forming the wavelength conversion adhesive layer 210 is, for example, a layer of a wavelength conversion adhesive material formed by uniformly mixing a phosphor powder (not shown) and a silicone resin (not shown) by mixing the dopant and the colloid. (not shown) is laid on a release film (not shown), and then the wavelength conversion adhesive material layer is allowed to stand for a period of time, for example, after 24 hours, because of the difference in density between the fluorescent powder and the silicone, a low separation is formed. The concentration of the phosphor layer 212 and the wavelength conversion layer 210 of the high concentration phosphor layer 214, wherein the high concentration phosphor layer 214 is deposited under the low concentration phosphor layer 212, and the high concentration phosphor layer 214 is, for example, yellow, the low concentration phosphor layer 212 is transparent, for example, and the thickness of the low concentration phosphor layer 212 is preferably greater than the thickness of the high concentration phosphor layer 214. In one embodiment, the thickness ratio can be Between 1 and 200, but not limited to this.

Next, referring to FIG. 17A, a double-sided adhesive film 10a is provided. The low-concentration phosphor layer 212 of the wavelength conversion adhesive layer 210 is disposed on the double-sided adhesive film 10a to fix the wavelength conversion adhesive through the double-sided adhesive film 10a. The location of layer 210. Next, a first cutting process is performed to cut from the high concentration phosphor layer 214 to a portion of the low concentration phosphor layer 212 to form a plurality of trenches C1. Here, each trench C1 has a depth at least half of the thickness of the wavelength conversion adhesive layer 210. For example, the thickness of the wavelength conversion adhesive layer 210 is 240 micrometers, and the depth of the trench C1 is, for example, 200 micrometers. At this time, the trench C1 can divide the low-concentration phosphor layer 212 of the wavelength conversion adhesive layer 210 into a flat portion 212a and a protruding portion 212b on the flat portion 212a, and the high-concentration phosphor layer 214 is located in the protruding portion. On the part 212b.

Next, referring to FIG. 17B, a plurality of spaced-apart light-emitting units 220 are disposed on the wavelength conversion adhesive layer 210, wherein each of the light-emitting units 220 has an upper surface 222 and a lower surface 224 opposite to each other, and a connecting upper surface 222. A side surface 226 of the lower surface 224 and a first electrode pad 223 and a second electrode pad 225 are disposed on the lower surface 224 and separated from each other. The upper surface 222 of the light emitting unit 220 is located on the high concentration phosphor layer 214 of the wavelength conversion adhesive layer 210 to increase the light extraction rate and improve the light pattern. The trench C1 divides the light emitting unit 220 into a plurality of cells A. In the present embodiment, each of the cells A includes at least two light emitting cells 220 (two light emitting cells 220 are schematically illustrated in FIG. 17B). Each of the light emitting units 220 is, for example, a light emitting diode wafer having an emission wavelength between 315 nm and 780 nm, and the light emitting diode chip includes, but not limited to, ultraviolet light, blue light, green light, yellow light, orange Light or red light emitting diode chip.

Next, referring to FIG. 17B , a light transmissive adhesive layer 230 a is formed on the wavelength conversion adhesive layer 210 and extends on the side surface 226 of the light emitting unit 220 . As shown in FIG. 17B, the light-transmitting adhesive layer 230a is gradually thickened from the lower surface 224 of each light-emitting unit 220 to the upper surface 222, and the light-transmitting adhesive layer 230a has a concave surface 232 with respect to the side surface 226 of the light-emitting unit 220. , but not limited to this. Here, the purpose of the light-transmitting adhesive layer 230a is to increase the light-removing effect of the side surface of the wafer because the light-transmitting adhesive layer 230a is a light-transmitting material and has a refractive index greater than 1, in addition to the position where the light-emitting unit 220 is fixed.

Next, referring to FIG. 17C, a reflective protection member 240 is formed between the light emitting units 220 and filled with the trenches C1. The reflective protective members 240 are formed on the wavelength conversion adhesive layer 210 and cover each of the cells A and fill the trenches. Slot C1. The reflective protector 240 exposes the lower surface 224 of each of the light emitting units 220, the first electrode pad 223, and the second electrode pad 225. Here, the reflectance of the reflective protector 240 is at least greater than 90%, and the reflective protector 240 is, for example, a white glue layer. The reflective protection member 240 is formed by, for example, dispensing. The reflective protection member 240 directly covers the transparent adhesive layer 230a and extends over the edge of the high-concentration phosphor layer 214 along the transparent adhesive layer 230a. Full of grooves C1. At this time, the orthographic projection of the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220 on the double-sided adhesive film 10a does not overlap the orthographic projection of the reflective protection member 240 on the double-sided adhesive film 10a.

Next, referring again to FIG. 17C, a second cutting process is performed to penetrate the low-concentration phosphor layer 212 from the reflective guard 240 along the trench C1 to form a plurality of light-emitting devices 200a separated from each other. At this time, as shown in FIG. 17C, the wavelength conversion adhesive layer 210 contacted by the two light emitting units 220 in each unit A is continuous, that is, the light emitting units 220 have the same light emitting surface, and thus the light emitting unit 220 emits The light can be guided through the transparent low-concentration phosphor layer 212, so that the light-emitting device 200a of the embodiment has better illumination uniformity.

After that, please refer to FIG. 17C and FIG. 17D simultaneously, and after performing the second cutting process, a film turning process is required. First, a UV film 20a is first provided on the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220 to fix the relative positions of the light emitting devices 200a. Next, the double-sided adhesive film 10a is removed to expose the low-concentration phosphor layer 212 of the wavelength conversion adhesive layer 210. Finally, referring to FIG. 17E, the UV film 20a is removed to expose the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220. So far, the fabrication of the light-emitting device 200a has been completed. It should be noted that, for convenience of description, FIG. 17E only schematically illustrates one light emitting device 200a.

Structurally, referring to FIG. 17E, the light-emitting device 200a includes a plurality of light-emitting units 220 (two light-emitting units 220 are schematically illustrated in FIG. 17E), a wavelength conversion adhesive layer 210, and a reflective protection member 240. Each of the light emitting units 220 has an upper surface 222 and a lower surface 224 opposite to each other, a side surface 226 connecting the upper surface 222 and the lower surface 224, and a first electrode pad 223 and a first layer on the lower surface 224 and separated from each other. Two electrode pads 225. The wavelength conversion adhesive layer 210 is disposed on the upper surface 222 of the light emitting unit 220, and the wavelength conversion adhesive layer 210 includes a low concentration phosphor layer 212 and a high concentration phosphor layer 214. The low concentration phosphor layer 212 has a flat portion 212a and a protruding portion 212b on the flat portion 212a. The high concentration phosphor layer 214 is disposed between the upper surface 222 and the protrusion 212b, wherein the high concentration phosphor layer 214 covers the protrusion 212b and contacts the upper surface 222 of the light emitting unit 220. The light emitting units 220 are spaced apart and expose a portion of the wavelength conversion adhesive layer 210. The reflective protection member 240 covers the side surface 226 of each of the light emitting units 220 and covers the wavelength conversion adhesive layer 210 exposed by the light emitting unit 220. The reflective protector 240 exposes the lower surface 224 of each of the light emitting units 220, the first electrode pad 223, and the second electrode pad 225. The edge of the reflective protector 240 is aligned to the edge of the flat portion 212a of the low concentration phosphor layer 212.

Since the light-emitting units 220 in the light-emitting device 200a of the present embodiment are only in contact with one wavelength conversion adhesive layer 210, that is, the light-emitting units 220 have the same light-emitting surface, and the edge of the low-concentration phosphor adhesive layer 212 and the reflective protection member The edges of 240 are aligned. Therefore, the light emitted by the light-emitting unit 220 is transmitted through the low-concentration phosphor layer 212, so that the light-emitting device 200a of the embodiment can have a larger light-emitting area and better light-emitting uniformity. In addition, the reflective protection member 240 covers the side surface 226 of the light emitting unit 220 , and the reflective protection member 240 exposes the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220 . Therefore, the light-emitting device 200a of the present embodiment does not need to use a conventional carrier bracket to support and fix the light-emitting unit 220, which can effectively reduce the package thickness and the manufacturing cost, and can also effectively improve the forward light-emitting efficiency of the light-emitting unit 220.

It should be noted that the embodiment does not limit the structural form of the transparent adhesive layer 230a, although the transparent adhesive layer 230a illustrated in FIG. 17E is embodied to have a concave surface with respect to the side surface 226 of the light emitting unit 220. 232. In other words, the reflective protection member 240 further includes a reflective surface 242 that is in contact with the light emitting unit 220, and the reflective surface 242 is embodied as a curved surface. However, in other embodiments, referring to FIG. 18A, the light-emitting device 200b of the present embodiment is similar to the light-emitting device 200a of FIG. 17E, except that the light-transmitting adhesive layer 230b is opposite to the side surface of each of the light-emitting units 220. The 226 has a convex surface 234, which can effectively increase the lateral light emission of the light-emitting unit 220, and can also increase the light-emitting area of the light-emitting device 200b by the arrangement of the wavelength conversion adhesive layer 210. In other words, the reflecting surface 242a of the reflective protector 240a is embodied as a curved surface. Alternatively, referring to FIG. 18B, the light-emitting device 200c of the present embodiment is similar to the light-emitting device 200a of FIG. 17E, except that the light-transmitting adhesive layer 230c has an inclined surface with respect to the side surface 226 of each of the light-emitting units 220. 236. In other words, the reflective surface 242b of the reflective guard 240b is embodied as a flat surface.

It is to be noted that the following embodiments use the same reference numerals and parts in the foregoing embodiments, wherein the same reference numerals are used to refer to the same or similar elements, and the description of the same technical content can refer to the foregoing embodiments, the following embodiments The details are not repeated.

19A to 19E are schematic cross-sectional views showing a method of fabricating a light-emitting device according to another embodiment of the present invention. The main difference between the manufacturing method of the light-emitting device 200d of the present embodiment and the manufacturing method of the light-emitting device 200a in the above-mentioned FIGS. 17A to 17E is that, referring to FIG. 19A, when the first cutting process is performed, a plurality of slaves are formed. The high concentration phosphor layer 214' is diced to the second trench C2' of the portion of the low concentration phosphor layer 212'. As shown in FIG. 19A, the positions of the trench C1' and the second trench C2' are staggered, wherein each trench C1' has a depth at least half of the thickness of the wavelength conversion adhesive layer 210', and each second The depth of the trench C2' is the same as the depth of each trench C1'. For example, if the thickness of the wavelength conversion adhesive layer 210' is 240 micrometers, and the depth of the trench C1' and the depth of the second trench C2' are, for example, 200 micrometers, it is not limited thereto. At this time, the flat portion 212a' of the low-concentration phosphor layer 212' has a thickness T, and preferably, the thickness T is, for example, between 20 μm and 50 μm. The second trench C2' divides the protrusion of the low-concentration phosphor layer 212' in the wavelength conversion adhesive layer 210' into two protruding sub-portions 212b', and the high-concentration phosphor layer 214' is located in the protruding sub-portions 212b. 'on.

Next, referring to FIG. 19B, the spaced-apart light-emitting units 220 are disposed on the wavelength conversion adhesive layer 210', wherein the second trenches C2' are located between the two light-emitting units 220 in each of the light-emitting unit units A, and the light is emitted. The unit 220 is disposed on the protruding sub-portion 212b', and the upper surface 222 of the light-emitting unit 220 directly contacts the high-concentration phosphor layer 214'. Preferably, the ratio of the length of each protruding sub-portion 212b' to the length of the corresponding light-emitting unit 220 is greater than 1 and less than 1.35, that is, the edge of the protruding sub-portion 212b' of the low-concentration phosphor layer 212' Outside the edge of the light-emitting unit 220, and the edge of the high-concentration phosphor layer 214' also extends beyond the edge of the light-emitting unit 220, the light-emitting area of the light-emitting unit 220 can be effectively increased. Then, a light-transmitting adhesive layer 230a is formed on the side surface 226 of the light-emitting unit 220, wherein the light-transmitting adhesive layer 226 is disposed only on the side surface 226 of the light-emitting unit 220 and extends to the high-concentration of the wavelength conversion adhesive layer 210'. On the photo-adhesive layer 214', it is not extended on the low-concentration phosphor layer 212'.

Next, referring to the steps of FIG. 17C, FIG. 17D and FIG. 17E, please refer to FIG. 19C first, that is, forming the reflective protection member 240 on the wavelength conversion adhesive layer 210' and covering each unit A and filling the trench C1' with The second trench C2', and then, a second dicing process is performed to penetrate the low-concentration phosphor layer 212' from the reflective guard 240 along the trench C1' to form a plurality of light-emitting devices 200d separated from each other. Next, please refer to FIG. 19C and FIG. 19D simultaneously, and after performing the second cutting process, a film turning process is required. First, the UV film 20a is first provided on the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220 to fix the relative positions of the light emitting devices 200a. Next, the double-sided adhesive film 10a is removed to expose the low-concentration phosphor layer 212' of the wavelength conversion adhesive layer 210'. Finally, referring to FIG. 19E, the UV film 20a is removed to expose the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220. So far, the fabrication of the light-emitting device 200d has been completed. It should be noted that, for convenience of explanation, FIG. 19E only schematically shows a light-emitting device 200d.

Referring to FIG. 19E, FIG. 20A and FIG. 20B, it is to be noted that FIG. 19E is a cross-sectional view taken along line Y-Y of FIG. 20A. The light-emitting device 200d of the present embodiment is similar to the light-emitting device 200a of FIG. 17E, in that the wavelength conversion adhesive layer 210' exposed between the two light-emitting units 220 further has a second trench C2', wherein The two trenches C2' extend from the high concentration phosphor layer 214' to a portion of the low concentration phosphor layer 212'. That is, the two light emitting units 220 are disposed on a continuous wavelength conversion adhesive layer 210', so that the light emitting unit 220 has the same light emitting surface, and the edge of the low concentration fluorescent rubber layer 212' and the reflective protection member 240 The edges are aligned. Therefore, the light emitted by the light-emitting unit 220 is guided through the low-concentration phosphor layer 212', so that the light-emitting device 200d of the embodiment can have a larger light-emitting area and better light-emitting uniformity.

In particular, when the first cutting process is performed, the depth cut in the direction of the line X-X and the direction of the line Y-Y in Fig. 20A is substantially the same. That is, referring to FIG. 20B, on the cross-sectional view in the line XX direction, the flat portion 212a' of the low-concentration phosphor layer 212' has a thickness T, please refer to FIG. 19E, and the profile in the line YY direction is low. The flat portion 212a' of the concentration phosphor layer 212' also has a thickness T. Preferably, the thickness T is, for example, between 20 microns and 50 microns.

Of course, in other embodiments, the flat portion 212a' of the low-concentration phosphor layer 212' may have a different thickness during the cutting in different directions during the first cutting process. FIG. 21A is a perspective view of a light emitting device according to another embodiment of the present invention. 21B and 21C are schematic cross-sectional views taken along line X'-X' and line Y'-Y' of Fig. 21A, respectively. Referring to FIG. 21A, FIG. 21B and FIG. 21C simultaneously, when the first cutting process is performed, the direction of the line X'-X' in FIG. 21A is different from the depth cut by the direction of the line Y'-Y', resulting in a wavelength. The conversion adhesive layer 210 ′ further includes a first exposed side portion and a second exposed side portion that are not covered by the reflective protection member 240 , and the first exposed side portion and the second exposed side portion are not parallel, and the wavelength conversion adhesive layer The thickness of 210' at the first exposed side is different from the thickness of the wavelength converting adhesive layer 210' at the second exposed side. In detail, the flat portion 212a'' of the low-concentration phosphor layer 212'' has a first thickness T1 in the direction of the line X'-X', and the flat portion 212a of the low-concentration phosphor layer 212'' '' has a second thickness T2 in the direction D2 of Y'-Y', and the first thickness T1 is different from the second thickness T2. Preferably, the first thickness T1 is, for example, between 50 micrometers and 200 micrometers, and the second thickness T2 is, for example, between 20 micrometers and 50 micrometers.

Since the flat portion 212a' of the low-concentration phosphor layer 212'' of the present embodiment has different first thicknesses T1 and second thicknesses in the direction of X'-X' and Y'-Y', respectively. Since T2 can effectively reduce the brightness reduction between the adjacent two light-emitting units 220 due to the dark band, the uniformity of light emission of the light-emitting device 200e can be improved. In addition, it is worth mentioning that, in the direction of the line Y'-Y', the thickness T2 of the flat portion 212a'' of the low-concentration phosphor layer 212"' is increased by, for example, 0.04 mm (mm). When the thickness is up to 0.2 mm, the light-emitting angle of the light-emitting unit 220 can be increased from 120 degrees to 130 degrees, that is, the light-emitting angle of the light-emitting unit 220 can be increased by 10 degrees. In short, the thickness of the flat portion 212a'' of the low-concentration phosphor layer 212''' is positively correlated with the light-emitting angle of the light-emitting unit 220.

In summary, the reflective protection member of the present invention covers the side surface of the light emitting unit, and the bottom surface of the reflective protection member exposes the first bottom surface of the first electrode pad of the light emitting unit and the second bottom surface of the second electrode pad. Therefore, the light-emitting device of the present invention not only does not need to use a conventional carrier bracket to support and fix the light-emitting unit, but can effectively reduce the package thickness and the manufacturing cost, and can also effectively improve the forward light-emitting efficiency of the light-emitting unit.

In addition, since the light-emitting units in the light-emitting device of the present invention are only in contact with one wavelength conversion adhesive layer, that is, the light-emitting units have the same light-emitting surface, and the edge of the low-concentration phosphor layer is cut with the edge of the reflective protection member. Qi. Therefore, the light emitted by the light-emitting unit is guided through the low-concentration phosphor layer, so that the light-emitting device of the present invention can have a larger light-emitting angle and better light-emitting uniformity. Further, the reflective protection member covers a side surface of the light emitting unit and exposes the first electrode pad and the second electrode pad of the light emitting unit. Therefore, the illuminating device of the present invention does not need to use a conventional carrying bracket to support and fix the illuminating unit, and can effectively reduce the package thickness and the manufacturing cost, and at the same time, can effectively improve the forward light-emitting efficiency of the illuminating unit.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧Substrate
10a‧‧‧Double film
20‧‧‧Other substrate
20a‧‧‧UV film
30‧‧‧First release film
40‧‧‧Separate release film
100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h, 100i, 100j, 100k, 100m, 100n, 100p, 200a, 200b, 200c, 200d ‧ ‧ luminaire
Unit 101‧‧‧
110a, 110b, 110c, 110c', 220‧‧‧ lighting units
112a, 112b, 112c, 222‧‧‧ upper surface
113, 113', 223‧‧‧ first electrode pad
113a‧‧‧ first bottom
113b‧‧‧ first side surface
114a, 114b, 114c, 224‧‧‧ lower surface
115, 115', 225‧‧‧ second electrode pad
115a‧‧‧second bottom surface
115b‧‧‧Second side surface
116a, 116b, 116c‧‧‧ side surface
120, 120', 120c, 120d, 120m, 120n, 120p, 240, 240a, 240b‧‧‧ reflection protection
121‧‧‧ edge
122, 122c, 122d‧‧‧ top
124, 124m, 124n‧‧‧ bottom
130d, 130c‧‧‧first extended electrode
140d, 140c‧‧‧second extension electrode
150‧‧‧Package layer
150c, 150c', 230a, 230b, 230c‧‧‧ light transmissive layer
160, 160'‧‧‧Transparent layer
170, 170', 170a, 210, 210'‧‧‧ wavelength conversion adhesive layer
171, 171a‧‧‧ side edges
172, 172a, 214, 214'‧‧‧ high concentration phosphor layer
173‧‧‧ top surface
173a‧‧‧ edge
174, 174a, 212, 212', 212''‧‧‧ low concentration phosphor layer
212a, 212a', 212a''‧‧‧ flat section
212b‧‧‧Protruding
212b'‧‧‧ prominent subsection
226‧‧‧ side surface
232‧‧‧ concave surface
234‧‧‧ convex surface
236‧‧‧Sloping surface
242, 242a, 242b‧‧‧ reflective surface
Unit A‧‧‧
C‧‧‧ trench
C1, C1'‧‧‧ trench
C2'‧‧‧Second trench
D‧‧‧Deep
E‧‧‧Extended electrode layer
G‧‧‧ spacing
H‧‧‧ height difference
L‧‧‧ cutting line
M1‧‧‧ first metal layer
M2‧‧‧ second metal layer
S‧‧‧ gap
T‧‧‧ thickness
T1‧‧‧first thickness
T2‧‧‧second thickness
W‧‧‧Width
XX, X'-X', YY, Y'-Y'‧‧‧ line

FIG. 1 is a schematic diagram of a light emitting device according to an embodiment of the invention. 2 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 3 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 4 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 5 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 6 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 7 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 8 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 9 is a schematic diagram of a light emitting device according to another embodiment of the present invention. 10A-10D are schematic cross-sectional views showing a method of fabricating a light-emitting device according to an embodiment of the invention. 11A-11C are schematic cross-sectional views showing a partial step of a method of fabricating a light emitting device according to another embodiment of the present invention. 12A to 12E are schematic cross-sectional views showing a method of fabricating a light-emitting device according to another embodiment of the present invention. 13A-13D are cross-sectional views showing a partial step of a method of fabricating a light emitting device according to another embodiment of the present invention. 14A to 14E are schematic cross-sectional views showing a method of fabricating a light-emitting device according to another embodiment of the present invention. 15A-15E are schematic cross-sectional views showing a method of fabricating a light emitting device according to another embodiment of the present invention. 16A-16C are schematic cross-sectional views of a light emitting device according to various embodiments of the present invention. 17A-17E are cross-sectional views showing a method of fabricating a light emitting device according to an embodiment of the invention. 18A and 18B are schematic cross-sectional views showing two light-emitting devices according to a second embodiment of the present invention. 19A to 19E are schematic cross-sectional views showing a method of fabricating a light-emitting device according to another embodiment of the present invention. 20A is a perspective view of the light emitting device of FIG. 19E. 20B is a cross-sectional view taken along line X-X of FIG. 20A. FIG. 21A is a perspective view of a light emitting device according to another embodiment of the present invention. 21B and 21C are schematic cross-sectional views taken along line X'-X' and line Y'-Y' of Fig. 21A, respectively.

100a‧‧‧Lighting device

110a‧‧‧Lighting unit

112a‧‧‧Upper surface

113‧‧‧First electrode pad

113a‧‧‧ first bottom

114a‧‧‧lower surface

115‧‧‧Second electrode pad

115a‧‧‧second bottom surface

116a‧‧‧ side surface

120‧‧‧Reflecting protection

122‧‧‧ top surface

124‧‧‧ bottom

Claims (20)

A light-emitting device comprising: a wavelength conversion layer having an upper surface and a lower surface opposite to each other; at least one light-emitting unit having a two-electrode pad, wherein the two electrode pads are located on the same side of the light-emitting unit, wherein the light-emitting unit is configured On the upper surface of the wavelength conversion layer and exposing the two electrode pads; a reflective protection member covering the light emitting unit and a portion of the wavelength conversion layer, and exposing at least the two electrode pads of the light emitting unit and the wavelength conversion The lower surface of the layer; and a light transmissive layer disposed on the wavelength conversion layer and between the light emitting unit and the reflective protection member. The light-emitting device of claim 1, wherein the light-transmitting layer is disposed between the wavelength conversion layer and the light-emitting unit. The illuminating device of claim 1, wherein the reflective protection member comprises a reflecting surface in contact with the illuminating unit. A light-emitting device comprising: a wavelength conversion layer having an upper surface and a lower surface opposite to each other; at least one light-emitting unit having a two-electrode pad, wherein the two electrode pads are located on the same side of the light-emitting unit, wherein the light-emitting unit is configured On the upper surface of the wavelength conversion layer and exposing the two electrode pads; and a reflective protection member covering the light emitting unit and a portion of the wavelength conversion layer, and exposing at least the two electrode pads of the light emitting unit and the wavelength The lower surface of the conversion layer, wherein the reflective protection member comprises a reflective surface, a first side of the reflective surface contacts the light emitting unit, and a second side extends toward the wavelength conversion layer and away from the light emitting unit. The illuminating device of claim 3, wherein the reflective surface of the reflective protection member is a flat surface or a curved surface. The light-emitting device of claim 1 or 4, wherein a bottom surface of the reflective protection member forms a plane with the lower surface of the wavelength conversion layer. The light-emitting device of claim 1 or 4, wherein the reflective protection member covers the wavelength conversion layer to expose a portion of a side surface of the wavelength conversion layer. The illuminating device of claim 7, wherein the portion of the side of the wavelength conversion layer that is exposed and a side of the reflective protection member form a flat side of the illuminating device. The illuminating device of claim 1 or 4, wherein the reflective protection member exposes a first partial side and a second partial side respectively on different sides of the wavelength conversion layer, and the wavelength conversion layer The thickness at the side of the first portion is different from the thickness at the side of the second portion of the wavelength converting layer. The light-emitting device of claim 8, wherein the wavelength conversion layer further comprises a low-concentration phosphor layer and a high-concentration phosphor layer, wherein the high-concentration phosphor layer is located at the low-concentration phosphor layer and the light-emitting layer Between units. The illuminating device of claim 1, wherein the reflective protection member fills a gap between the two electrode pads. The illuminating device of claim 11, wherein the reflective protection member completely fills the gap between the two electrode pads and a surface of the reflective protection member is aligned with a surface of the two electrode pads. The illuminating device of claim 1, wherein the at least one illuminating unit is a plurality of illuminating units, and the wavelength converting layer has at least one groove between the two illuminating units. A method for fabricating a light-emitting device, comprising: providing a wavelength conversion layer; arranging a plurality of spaced-apart light-emitting units on the wavelength conversion layer, and exposing a two-electrode pad of each of the light-emitting units; forming a plurality of wavelength conversion layers a trench, wherein the trenches are located between the light emitting units; forming a reflective protection member on the wavelength conversion layer and between the light emitting cells and filling the trenches, wherein the reflective protection member exposes the trenches The electrode pads of the light emitting units; and performing a cutting process along the trenches to form a plurality of light emitting devices. The method of fabricating a light-emitting device according to claim 14, wherein each of the grooves has a depth of at least half of a thickness of the wavelength conversion layer. The method for fabricating a light-emitting device according to claim 14, further comprising: after arranging the spaced-apart light-emitting units on the wavelength conversion layer, forming a light-transmitting layer on the wavelength conversion layer. The method for fabricating a light-emitting device according to claim 14, further comprising: forming a light-transmitting layer on the wavelength conversion layer before arranging the spaced-apart light-emitting units on the wavelength conversion layer. The method of fabricating a light-emitting device according to claim 14, wherein the reflective protection member further comprises a reflective surface in contact with the light-emitting unit. The method for fabricating a light-emitting device according to claim 18, wherein the reflective surface of the reflective protection member is a flat surface or a curved surface. The method for fabricating a light-emitting device according to claim 14, wherein the wavelength conversion layer further comprises a low-concentration phosphor layer and a high-concentration phosphor layer, wherein the light-emitting units are disposed on the high-concentration phosphor layer. .