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TW201703012A - Shift register circuit and method thereof - Google Patents

Shift register circuit and method thereof Download PDF

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Publication number
TW201703012A
TW201703012A TW104132452A TW104132452A TW201703012A TW 201703012 A TW201703012 A TW 201703012A TW 104132452 A TW104132452 A TW 104132452A TW 104132452 A TW104132452 A TW 104132452A TW 201703012 A TW201703012 A TW 201703012A
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Taiwan
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transistor
circuit
electrically coupled
signal
control
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TW104132452A
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Chinese (zh)
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TWI559279B (en
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柯健專
蔡孟杰
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友達光電股份有限公司
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Priority to TW104132452A priority Critical patent/TWI559279B/en
Priority to CN201510725407.5A priority patent/CN105280134B/en
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Publication of TWI559279B publication Critical patent/TWI559279B/en
Publication of TW201703012A publication Critical patent/TW201703012A/en

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Abstract

A shift register circuit comprises an input circuit, a first pull-down circuit, a pull up circuit, a second pull-down circuit and a first compensation circuit. The input circuit is used to output a control signal, the first pull-down circuit is electrically coupled to the input circuit and used to pull down the control signal, the pull up circuit is electrically coupled to the input circuit and used to output a gate control signal, the second pull-down circuit is electrically coupled to the pull up circuit and used to pull down the gate control signal, and the first compensation circuit is used to compensate the control signal when a voltage of a first terminal of the first compensation circuit is higher than a voltage of a second terminal of the first compensation circuit.

Description

移位暫存器電路及其操作方法 Shift register circuit and operation method thereof

本發明是有關於一種移位暫存器電路,尤其是有關於一種應用於內嵌式觸控顯示裝置的移位暫存器電路及其操作方法。 The present invention relates to a shift register circuit, and more particularly to a shift register circuit applied to an in-cell touch display device and an operation method thereof.

習知的內嵌式觸控顯示裝置包括具有觸控感測元件之顯示面板以及閘極驅動電路,閘極驅動電路更包括多個移位暫存器電路,移位暫存器電路是用以根據驅動訊號正確地輸出多個閘極驅動訊號來驅動顯示面板中的多個畫素電路。當內嵌式觸控顯示裝置感測到有觸控事件發生時,內嵌式觸控顯示裝置會由正常顯示顯示畫面的顯示時段進入感測觸控事件的觸控感測時段,此時應輸出閘極驅動訊號的移位暫存器電路會停止輸出閘極驅動訊號,內嵌式觸控顯示裝置即停止更新顯示畫面,並同時進行觸控感測。而此時移位暫存器電路已接收了驅動訊號旦尚未輸出閘極驅動訊號,其驅動訊號會因為移位暫存器電路中的漏電路徑而洩漏其電壓準位,因此當內嵌式觸控顯示裝置結束觸控感測時段並回復至一般顯示時段時,應輸出閘極驅動訊號的移位暫存器電路之驅動訊號因為漏電而使得驅動能力降低,導致移位暫存器電路輸出之閘極驅動訊號與觸控感測時段前所輸出之閘極驅動 訊號能力不同,進而使顯示畫面出現橫紋,造成使用者在觀賞顯示畫面時具有較差的觀賞效果。 A conventional in-cell touch display device includes a display panel having a touch sensing component and a gate driving circuit. The gate driving circuit further includes a plurality of shift register circuits, and the shift register circuit is used to A plurality of gate driving signals are correctly output according to the driving signal to drive a plurality of pixel circuits in the display panel. When the in-cell touch display device senses that a touch event occurs, the in-cell touch display device enters the touch sensing period of the sensing touch event from the display period of the normal display display screen. The shift register circuit of the output gate drive signal stops the output of the gate drive signal, and the in-cell touch display device stops updating the display screen and simultaneously performs touch sensing. At this time, the shift register circuit has received the driving signal and has not output the gate driving signal, and the driving signal leaks its voltage level due to the leakage path in the shift register circuit, so when the embedded touch When the control display device ends the touch sensing period and returns to the normal display period, the driving signal of the shift register circuit that should output the gate driving signal is reduced in driving ability due to leakage, resulting in the output of the shift register circuit. Gate drive signal and gate drive output before the touch sensing period The signal capability is different, which causes the display screen to have horizontal stripes, which causes the user to have a poor viewing effect when viewing the display screen.

為了有效解決因為閘極驅動訊號在觸控感測時段時發生漏電而使內嵌式觸控顯示裝置之顯示畫面出現橫紋之缺憾,本發明提出一種移位暫存器電路的實施例,其包括輸入電路、第一下拉電路、上拉電路、第二下拉電路以及一第一補償電路,輸入電路是用以根據第n-1級閘極驅動訊號來輸出一驅動電路控制訊號,第一下拉電路與輸入電路電性耦接,係用以將驅動電路控制訊號下拉至低電壓準位,上拉電路與輸入電路電性耦接,係用以根據驅動電路控制訊號輸出一第n級閘極驅動訊號,第二下拉電路與上拉電路電性耦接,係用以將第n級閘極驅動訊號下拉至低電壓準位,第一補償電路具有一第一端以及一第二端,第一補償電路之第一端與一第一補償電路控制訊號電性耦接,第一補償電路之第二端與輸入電路以及上拉電路電性耦接,於一觸控感測時段,第一補償電路控制訊號為一高電壓準位,第n級閘極驅動訊號為禁能,第一補償電路之第一端之電位大於第一補償電路之第二端之電位時,第一補償電路產生由第一端往第二端流動之一第一電流以補償驅動電路控制訊號。 In order to effectively solve the problem of horizontal stripes appearing on the display screen of the in-cell touch display device due to leakage of the gate driving signal during the touch sensing period, the present invention provides an embodiment of a shift register circuit. The input circuit, the first pull-down circuit, the pull-up circuit, the second pull-down circuit and a first compensation circuit, the input circuit is configured to output a driving circuit control signal according to the n-1th gate driving signal, first The pull-down circuit is electrically coupled to the input circuit for pulling down the driving circuit control signal to a low voltage level, and the pull-up circuit is electrically coupled to the input circuit for outputting an n-th stage according to the driving circuit control signal. a gate driving signal, the second pull-down circuit is electrically coupled to the pull-up circuit, and is configured to pull the n-th gate driving signal to a low voltage level, the first compensation circuit has a first end and a second end The first end of the first compensation circuit is electrically coupled to a first compensation circuit control signal, and the second end of the first compensation circuit is electrically coupled to the input circuit and the pull-up circuit during a touch sensing period. the first The circuit control signal is a high voltage level, and the nth gate driving signal is disabled. When the potential of the first terminal of the first compensation circuit is greater than the potential of the second terminal of the first compensation circuit, the first compensation circuit generates A first current flows from the first end to the second end to compensate for the drive circuit control signal.

在本發明的較佳實施例中,上述之第一補償電路更包括一第一二極體以及一第二二極體,第一二極體以及第二二極體皆包括一正極端以及一負極端,第一二極體之正極端與第一補償電路控制訊號電性耦接,第一二極體之負極端與第二二極體之負極端電性耦接,第二二極體體之正極端與輸入電路以及上拉電路電性耦接。 In a preferred embodiment of the present invention, the first compensation circuit further includes a first diode and a second diode, and the first diode and the second diode each include a positive terminal and a second terminal. The positive terminal of the first diode is electrically coupled to the first compensation circuit control signal, and the negative terminal of the first diode is electrically coupled to the negative terminal of the second diode, and the second diode The positive terminal of the body is electrically coupled to the input circuit and the pull-up circuit.

在本發明的較佳實施例中,上述之第二二極體的尺寸大於第一二極體。 In a preferred embodiment of the invention, the second diode is larger in size than the first diode.

在本發明的較佳實施例中,上述之第一補償電路更包括一第二輸入電路、一第一電晶體、一第二電晶體、一第三電晶體,第一電晶體具有一第一端、一第二端以及一控制端,第一電晶體之第一端與第二輸入電路電性耦接,第一電晶體之控制端與一控制訊號電性耦接,第一電晶體之第二端與低電壓準位電性耦接,第二電晶體具有一第一端、一第二端以及一控制端,第二電晶體之第一端係用以接收第一補償電路控制訊號,第二電晶體之控制端與第一電晶體之第一端電性耦接,第三電晶體具有一第一端、一第二端以及一控制端,第三電晶體之第一端與第二電晶體之第二端電性耦接,第三電晶體之控制端係用以接收第一補償電路控制訊號,第三電晶體之第二端與第一補償電路之第二端電性耦接。 In a preferred embodiment of the present invention, the first compensation circuit further includes a second input circuit, a first transistor, a second transistor, and a third transistor. The first transistor has a first a first end of the first transistor is electrically coupled to the second input circuit, and the control end of the first transistor is electrically coupled to a control signal, the first transistor The second end is electrically coupled to the low voltage level, the second transistor has a first end, a second end, and a control end, and the first end of the second transistor is configured to receive the first compensation circuit control signal The control end of the second transistor is electrically coupled to the first end of the first transistor, the third transistor has a first end, a second end, and a control end, and the first end of the third transistor is The second end of the second transistor is electrically coupled, and the control end of the third transistor is configured to receive the first compensation circuit control signal, and the second end of the third transistor and the second end of the first compensation circuit are electrically connected Coupling.

在本發明的較佳實施例中,上述之第一補償電路更包括一第一電晶體、一第二電晶體、一第三電晶體以及一第四電晶體,第一電晶體具有一第一端、一第二端以及一控制端,第一電晶體之第一端係用以接收一第一掃描訊號,第一電晶體之控制端係用以接收一第n-1級閘極驅動訊號,第二電晶體具有一第一端、一第二端以及一控制端,第二電晶體之第一端係用以接收一第二掃描訊號,第二電晶體之控制端係用以接收一第n+1級閘極驅動訊號,第二電晶體之第二端與第一電晶體之第二端電性耦接,第三電晶體具有一第一端、一第二端以及一控制端,第三電晶體之第一端係用以接收第一補償電路控制訊號,第三電晶體之控制端與第一電晶體之第二端電性耦接,第四電晶體具有一第一端、一第二端以及一控制端,第四電晶體之第一端與第三電晶體之第二端電性耦接,第四電晶體之控制端係用以接收第一補償電路控 制訊號,第四電晶體之第二端與第一補償電路之第二端電性耦接。 In a preferred embodiment of the present invention, the first compensation circuit further includes a first transistor, a second transistor, a third transistor, and a fourth transistor, the first transistor having a first a first end of the first transistor for receiving a first scan signal, and a control end of the first transistor for receiving an n-1th gate drive signal The second transistor has a first end, a second end, and a control end. The first end of the second transistor is configured to receive a second scan signal, and the control end of the second transistor is configured to receive a second end. The n+1th gate driving signal, the second end of the second transistor is electrically coupled to the second end of the first transistor, and the third transistor has a first end, a second end, and a control end The first end of the third transistor is configured to receive the first compensation circuit control signal, the control end of the third transistor is electrically coupled to the second end of the first transistor, and the fourth transistor has a first end a second end and a control end, the first end of the fourth transistor and the second end of the third transistor are electrically Then, based control terminal of the fourth transistor for receiving the first compensation control circuit The second end of the fourth transistor is electrically coupled to the second end of the first compensation circuit.

在本發明的較佳實施例中,上述之移位暫存器電 路更包括一第二補償電路,其具有一第一端以及一第二端,第二補償電路之第一端與一第二補償電路控制訊號電性耦接,第二補償電路之第二端與輸入電路以及上拉電路電性耦接。 In a preferred embodiment of the invention, the shift register is electrically The circuit further includes a second compensation circuit having a first end and a second end. The first end of the second compensation circuit is electrically coupled to a second compensation circuit control signal, and the second end of the second compensation circuit Electrically coupled to the input circuit and the pull-up circuit.

本發明更提出一種移位暫存器電路之操作方 法,上述之移位暫存器電路包括上拉電路以及補償電路,上拉電路係用以根據一驅動電路控制訊號輸出一第n級閘極驅動訊號,補償電路具有一第一端以及一第二端,補償電路之第一端與一補償電路控制訊號電性耦接,補償電路之第二端與上拉電路電性耦接,其中移位暫存器電路之操作方法包括:於一觸控感測時段,第n級閘極驅動訊號為禁能,補償電路控制訊號為一高電壓準位且第一補償電路之第一端之電位大於第一補償電路之第二端之電位,補償電路產生由第一端往第二端流動之一第一電流以補償驅動電路控制訊號。 The invention further proposes an operation side of the shift register circuit The shift register circuit includes a pull-up circuit and a compensation circuit, wherein the pull-up circuit is configured to output an nth-level gate driving signal according to a driving circuit control signal, the compensation circuit has a first end and a first The second end of the compensation circuit is electrically coupled to a compensation circuit control signal, and the second end of the compensation circuit is electrically coupled to the pull-up circuit, wherein the operation method of the shift register circuit includes: During the sensing period, the nth gate driving signal is disabled, the compensation circuit control signal is a high voltage level, and the potential of the first end of the first compensation circuit is greater than the potential of the second end of the first compensation circuit, and the compensation is performed. The circuit generates a first current flowing from the first end to the second end to compensate for the drive circuit control signal.

在本發明的其他實施例中,上述之移位暫存器電 路之操作方法更包括:於一顯示時段,第n級閘極驅動訊號於顯示時段被致能,補償電路控制訊號為一低電壓準位,第一補償電路之第二端之電位大於第一補償電路之第一端之電位,補償電路產生由第二端往第一端流動之一第二電流。 In other embodiments of the present invention, the shift register is electrically powered The operation method of the road further comprises: during a display period, the nth gate driving signal is enabled during the display period, the compensation circuit control signal is a low voltage level, and the potential of the second end of the first compensation circuit is greater than the first The potential of the first end of the compensation circuit, the compensation circuit generates a second current flowing from the second end to the first end.

本發明所提出的移位暫存器電路實施例因具有 上述之補償電路,因此應輸出閘極驅動訊號的移位暫存器電路在觸控感測時段時,可利用補償電路所產生的電流來補償驅動電路控制訊號,故當觸控感測時段結束,應輸出閘極驅動訊號的移位暫存器電路之驅動電路控制訊號仍與觸控感測時段前之驅動電路控制訊號具有相同的驅動能力,避免因為 驅動電路控制訊號的驅動能力下降而發生顯示畫面出現橫紋的情況。 The embodiment of the shift register circuit proposed by the present invention has In the above compensation circuit, the shift register circuit that outputs the gate drive signal can compensate the drive circuit control signal by using the current generated by the compensation circuit during the touch sensing period, so when the touch sensing period ends The driving circuit control signal of the shift register circuit that should output the gate driving signal still has the same driving capability as the driving circuit control signal before the touch sensing period, avoiding The driving ability of the driving circuit control signal is lowered to cause a horizontal streak on the display screen.

為讓本發明之上述和其他目的、特徵和優點能更 明顯易懂,下文特舉較佳實施例並配合所附圖式做詳細說明如下。 The above and other objects, features and advantages of the present invention will be more It is apparent that the preferred embodiment is described in detail below with reference to the accompanying drawings.

10‧‧‧內嵌式觸控顯示裝置 10‧‧‧In-cell touch display device

11‧‧‧資料驅動電路 11‧‧‧Data Drive Circuit

12‧‧‧閘極驅動電路 12‧‧‧ gate drive circuit

121‧‧‧移位暫存器電路 121‧‧‧Shift register circuit

1211‧‧‧輸入電路 1211‧‧‧Input circuit

1212‧‧‧第一下拉電路 1212‧‧‧First pull-down circuit

1213‧‧‧上拉電路 1213‧‧‧ Pull-up circuit

1214‧‧‧第二下拉電路 1214‧‧‧Second pull-down circuit

1215‧‧‧第一補償電路 1215‧‧‧First compensation circuit

1216‧‧‧第二補償電路 1216‧‧‧Second compensation circuit

13‧‧‧顯示面板 13‧‧‧ display panel

14‧‧‧觸控感測電路 14‧‧‧Touch sensing circuit

131‧‧‧畫素單元 131‧‧‧ pixel unit

132‧‧‧觸控感測單元 132‧‧‧Touch sensing unit

40‧‧‧第二輸入電路 40‧‧‧Second input circuit

M1、M2、M3、M4、M5、M6、M7、M8、M9、M10、M11、M12、M13、M14、M15、M16、M17、M18、M31、M32‧‧‧電晶體 M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, M15, M16, M17, M18, M31, M32‧‧

Bi‧‧‧輸入訊號 Bi‧‧‧ input signal

Gn-5‧‧‧第n-5級閘極驅動訊號 G n-5 ‧‧‧n-5th gate drive signal

Gn-4‧‧‧第n-4級閘極驅動訊號 G n-4 ‧‧‧n-4th gate drive signal

Gn-3‧‧‧第n-3級閘極驅動訊號 G n-3 ‧‧‧n - 3th gate drive signal

Gn-2‧‧‧第n-2級閘極驅動訊號 G n-2 ‧‧‧n - 2th gate drive signal

Gn-1‧‧‧第n-1級閘極驅動訊號 G n-1 ‧‧‧n - 1th gate drive signal

Gn‧‧‧第n級閘極驅動訊號 G n ‧‧‧n-th gate drive signal

Gn+1‧‧‧第n+1級閘極驅動訊號 G n+1 ‧‧‧n + 1th gate drive signal

CK‧‧‧第一時脈訊號 CK‧‧‧ first clock signal

XCK‧‧‧第二時脈訊號 XCK‧‧‧ second clock signal

VGL‧‧‧低電壓準位 VGL‧‧‧ low voltage level

C1、C2、C3、C4‧‧‧電容 C1, C2, C3, C4‧‧‧ capacitors

Qn‧‧‧驅動電路控制訊號 Q n ‧‧‧Drive circuit control signal

Reset1‧‧‧第一補償電路控制訊號 Reset1‧‧‧First compensation circuit control signal

Reset2‧‧‧第二補償電路控制訊號 Reset2‧‧‧Second compensation circuit control signal

D1‧‧‧第一二極體 D1‧‧‧First Diode

D2‧‧‧第二二極體 D2‧‧‧ second diode

V1、V2‧‧‧高電壓準位 V 1 , V 2 ‧‧‧ high voltage level

T1、T2、T3、TD、TS‧‧‧時段 T 1 , T 2 , T 3 , T D , T S ‧‧‧

U2D‧‧‧第一掃描訊號 U2D‧‧‧ first scan signal

D2U‧‧‧第二掃描訊號 D2U‧‧‧second scan signal

L1、L2、Ln‧‧‧列 L 1 , L 2 , L n ‧‧‧

圖1為內嵌式觸控顯示裝置之實施例示意圖。 FIG. 1 is a schematic diagram of an embodiment of an in-cell touch display device.

圖2為本發明之移位暫存器電路之實施例一示意圖。 2 is a schematic diagram of an embodiment of a shift register circuit of the present invention.

圖3A為本發明之補償電路之實施例一示意圖。 3A is a schematic diagram of an embodiment of a compensation circuit of the present invention.

圖3B為本發明之補償電路之實施例二示意圖。 FIG. 3B is a schematic diagram of Embodiment 2 of the compensation circuit of the present invention.

圖4A為本發明之補償電路之實施例三示意圖。 4A is a schematic diagram of Embodiment 3 of the compensation circuit of the present invention.

圖4B為本發明之補償電路之實施例四示意圖。 4B is a schematic diagram of Embodiment 4 of the compensation circuit of the present invention.

圖4C為本發明之補償電路之實施例五示意圖。 4C is a schematic diagram of Embodiment 5 of the compensation circuit of the present invention.

圖5A為本發明第二輸入電路之實施例一示意圖。 FIG. 5A is a schematic diagram of Embodiment 1 of a second input circuit of the present invention.

圖5B為本發明第二輸入電路之實施例二示意圖。 FIG. 5B is a schematic diagram of Embodiment 2 of the second input circuit of the present invention.

圖6A為本發明之補償電路之實施例六示意圖。 FIG. 6A is a schematic diagram of Embodiment 6 of the compensation circuit of the present invention.

圖6B為本發明之補償電路之實施例七示意圖。 FIG. 6B is a schematic diagram of Embodiment 7 of the compensation circuit of the present invention.

圖7為本發明之訊號時序實施例示意圖。 FIG. 7 is a schematic diagram of a signal timing embodiment of the present invention.

圖8為本發明之另一訊號時序實施例示意圖。 FIG. 8 is a schematic diagram of another signal timing embodiment of the present invention.

圖9為本發明之移位暫存器電路之實施例二示意圖。 FIG. 9 is a schematic diagram of Embodiment 2 of the shift register circuit of the present invention.

圖10為本發明之移位暫存器電路之操作方法實施例示意圖。 FIG. 10 is a schematic diagram of an embodiment of an operation method of a shift register circuit of the present invention.

圖11為本發明之移位暫存器電路之操作方法另一實施例示意圖。 FIG. 11 is a schematic diagram of another embodiment of a method for operating a shift register circuit of the present invention.

圖1為內嵌式觸控顯示裝置10之實施例,內嵌式觸控顯示裝置10包括一資料驅動電路11、一閘極驅動電路12、一顯示面板13、一觸控感測電路14以及一時脈控制電路15,顯示面板13包括多個畫素單元131以及多個觸控感測單元132,資料驅動電路11與多個畫素單元131電性耦接,係用以提供多個顯示資料至電性耦接的多個畫素單元131,觸控感測電路14與多個觸控感測單元132電性耦接,係用以接收多個觸控感測單元132之觸控感測訊號,以判定觸控事件之位置,閘極驅動電路12更包括多個移位暫存器電路121,每一移位暫存器電路121與對應之多個畫素單元131電性耦接,移位暫存器電路121係用以讓電性耦接之多個畫素單元131可根據移位暫存器電路121所輸出之閘極驅動訊號開啟,以使多個畫素單元131可在正確的時段接收多個顯示資料並據以顯示,時脈控制電路15與資料驅動電路11、觸控感測電路14以及多個移位暫存器電路121電性耦接,是用以提供多個時脈訊號,例如第一時脈訊號CK、第二時脈訊號XCK以及補償電路控制訊號Reset至多個移位暫存器電路121,並根據內嵌式觸控顯示裝置10的運作時段控制輸出之時脈訊號至電性耦接之資料驅動電路11以及觸控感測電路14。 1 is an embodiment of an in-cell touch display device 10 . The in-cell touch display device 10 includes a data driving circuit 11 , a gate driving circuit 12 , a display panel 13 , and a touch sensing circuit 14 . The display panel 13 includes a plurality of pixel units 131 and a plurality of touch sensing units 132. The data driving circuit 11 is electrically coupled to the plurality of pixel units 131 for providing a plurality of display materials. The touch sensing circuit 14 is electrically coupled to the plurality of touch sensing units 132 for receiving touch sensing of the plurality of touch sensing units 132. The gate drive circuit 12 further includes a plurality of shift register circuits 121, each shift register circuit 121 is electrically coupled to the corresponding plurality of pixel units 131, The shift register circuit 121 is configured to enable the plurality of pixel units 131 electrically coupled to be turned on according to the gate driving signal outputted by the shift register circuit 121, so that the plurality of pixel units 131 can be Receiving a plurality of display materials in the correct time period and displaying them according to the clock control circuit 15 and the data driving power The circuit 11 , the touch sensing circuit 14 and the plurality of shift register circuits 121 are electrically coupled to provide a plurality of clock signals, such as a first clock signal CK, a second clock signal XCK, and compensation. The circuit control signal is reset to the plurality of shift register circuits 121, and the output clock signal is electrically connected to the data driving circuit 11 and the touch sensing circuit 14 according to the operation period of the in-cell touch display device 10. .

圖2為本發明之移位暫存器121之實施例,並以第n級之移位暫存器121為例。第n級之移位暫存器121包括一輸入電路1211、一第一下拉電路1212、一第二下拉電路1214、一上拉電路1213以及一第一補償電路1215。輸入電路1211包括一電晶體M4,電晶體M4包括一第一端、一控制端以及一第二端,電晶體M4之第一端是用以接收一輸入訊號Bi,電晶體M4之控制端是用以接收上一級之移位暫存器121 所輸出之第n-1級閘極驅動訊號Gn-1,電晶體M4之第二端則是用以輸出一驅動電路控制訊號Qn。第n級之移位暫存器121更包括一電容C1,電容C1包括一第一端以及一第二端,電容C1之第一端更與一第一時脈訊號CK電性耦接。 2 is an embodiment of the shift register 121 of the present invention, and takes the shift register 121 of the nth stage as an example. The n-stage shift register 121 includes an input circuit 1211, a first pull-down circuit 1212, a second pull-down circuit 1214, a pull-up circuit 1213, and a first compensation circuit 1215. The input circuit 1211 includes a transistor M4. The transistor M4 includes a first end, a control end and a second end. The first end of the transistor M4 is for receiving an input signal Bi, and the control end of the transistor M4 is The second end of the transistor M4 is used for outputting a driving circuit control signal Q n for receiving the n-1th gate driving signal G n-1 outputted by the shift register 121 of the previous stage. The shift register 121 of the nth stage further includes a capacitor C1. The capacitor C1 includes a first end and a second end. The first end of the capacitor C1 is further electrically coupled to a first clock signal CK.

第一下拉電路1212包括電晶體M1、電晶體M2 以及電晶體M3,係用以將驅動電路控制訊號Qn下拉至低電壓準位VGL。電晶體M1包括一第一端、一控制端以及一第二端,電晶體M1之第一端是用以接收輸入訊號Bi,電晶體M1之控制端是用以接收下一級之移位暫存器121所輸出之第n+1級閘極驅動訊號Gn+1,電晶體M1之第二端則是與驅動電路控制訊號Qn電性耦接。電晶體M2包括一第一端、一控制端以及一第二端,電晶體M2之第一端與電容C1之第二端電性耦接,電晶體M2之控制端是用以接收驅動電路控制訊號Qn,電晶體M2之第二端則是與低電壓準位VGL電性耦接,其中低電壓準位VGL可以是邏輯低電位。電晶體M3包括一第一端、一控制端以及一第二端,電晶體M3之第一端與驅動電路控制訊號Qn電性耦接,電晶體M3之控制端與電容C1之第二端電性耦接,電晶體M3之第二端則是與低電壓準位VGL電性耦接。 Pull-down circuit 1212 includes a first transistor M1, and transistor M2 transistor M3, a driving circuit system for the control signal Q n is pulled down to the low level voltage VGL. The transistor M1 includes a first end, a control end and a second end. The first end of the transistor M1 is for receiving the input signal Bi, and the control end of the transistor M1 is for receiving the shift register of the next stage. the n + 1 stage gate drive signal G n + 1, a second output terminal 121 of the transistor M1 and Q n is the driving circuit is electrically coupled to the control signal. The transistor M2 includes a first end, a control end and a second end. The first end of the transistor M2 is electrically coupled to the second end of the capacitor C1, and the control end of the transistor M2 is used to receive the driving circuit control. The signal Q n and the second end of the transistor M2 are electrically coupled to the low voltage level VGL, wherein the low voltage level VGL can be a logic low level. The transistor M3 includes a first end, a control end and a second end. The first end of the transistor M3 is electrically coupled to the driving circuit control signal Q n , and the control end of the transistor M3 and the second end of the capacitor C1 Electrically coupled, the second end of the transistor M3 is electrically coupled to the low voltage level VGL.

上拉電路1213包括一電晶體M7,係用以根據驅 動電路控制訊號Qn輸出一第n級閘極驅動訊號Gn,電晶體M7包括一第一端、一控制端以及一第二端,電晶體M7之第一端係用以接收第一時脈訊號CK,電晶體M7之控制端是用以接收驅動電路控制訊號Qn,電晶體M7第二端則是用以輸出第n級閘極驅動訊號Gn,此外第n級閘極驅動訊號Gn更與一電容C2之第一端電性耦接,電容C2之第二端則與驅動電路控制訊號Qn電性耦接。 Pull-up circuit 1213 includes a transistor M7, a system for outputting n-th gate driving circuit according to a control signal electrode drive signals G n Q n, transistor M7 comprises a first terminal, a control terminal and a second terminal, The first end of the transistor M7 is for receiving the first clock signal CK, the control end of the transistor M7 is for receiving the driving circuit control signal Q n , and the second end of the transistor M7 is for outputting the nth stage gate gate drive signal G n, in addition the n-th stage gate drive signal G n and more of a first end of a capacitor C2 is electrically coupled to a second terminal of the capacitor C2 and Q n of the driving circuit is electrically coupled to the control signal.

第二下拉電路1214包括電晶體M5以及電晶體 M6,係用以將第n級閘極驅動訊號Gn下拉至低電壓準位VGL,電晶體M5包括一第一端、一控制端以及一第二端,電晶體M5之第一端與第n級閘極驅動訊號Gn電性耦接,電晶體M5之控制端與一第二時脈訊號XCK電性耦接,電晶體M5之第二端則與低電壓準位VGL電性耦接。電晶體M6包括一第一端、一控制端以及一第二端,電晶體M6之第一端與第n級閘極驅動訊號Gn電性耦接,電晶體M6之控制端與電容C1之第二端電性耦接,電晶體M6之第二端則與低電壓準位VGL電性耦接。 The second pull-down circuit 1214 includes a transistor M5 and a transistor M6 for pulling down the n-th gate driving signal G n to a low voltage level VGL. The transistor M5 includes a first end, a control end, and a first two ends, a first end of transistor M5 and the n-th stage of the gate drive signal G n is electrically coupled to the control terminal of the transistor M5 and the clock signal XCK is electrically coupled to a second time, the second transistor M5 The terminal is electrically coupled to the low voltage level VGL. The transistor M6 includes a first end, a control end and a second end. The first end of the transistor M6 is electrically coupled to the nth gate driving signal G n , and the control terminal of the transistor M6 and the capacitor C1 The second end is electrically coupled, and the second end of the transistor M6 is electrically coupled to the low voltage level VGL.

一第一補償電路1215,其具有一第一端以及一第 二端,第一補償電路1215之第一端與一第一補償電路控制訊號Reset1電性耦接,第一補償電路之第二端與驅動電路控制訊號Qn電性耦接。 A first compensation circuit 1215 has a first end and a second end. The first end of the first compensation circuit 1215 is electrically coupled to a first compensation circuit control signal Reset1, and the second end of the first compensation circuit It is electrically coupled to the driving circuit control signal Q n .

請參考圖3A以及圖3B,圖3A以及圖3B為上 述之第一補償電路1215之實施例。請先參考圖3A,圖3A為上述之第一補償電路1215之實施例一,第一補償電路1215可包括一第一二極體D1以及一第二二極體D2,第一二極體D1以及第二二極體D2皆包括一正極端以及一負極端,第一二極體D1之正極端與第一補償電路控制訊號Reset1電性耦接,第一二極體D1之負極端與第二二極體D2之負極端電性耦接,第二二極體體D2之正極端與驅動電路控制訊號Qn電性耦接。圖3B為上述之第一補償電路1215之實施例二,第一補償電路1215可包括一電晶體M31以及一電晶體M32,電晶體M31包括一第一端、一控制端以及一第二端,電晶體M32包括一第一端、一控制端以及一第二端,電晶體M31第一端與電晶體M31之控制端以及第一補償電路控制訊號Reset1電性耦接,電晶體M31之第二端與電晶體M32之第二端電性耦接,電晶體M32之第一端與電晶體M32之控制端以 及驅動電路控制訊號Qn電性耦接。 Please refer to FIG. 3A and FIG. 3B, FIG. 3A and FIG. 3B are upper. An embodiment of the first compensation circuit 1215 is described. Referring to FIG. 3A, FIG. 3A is a first embodiment of the first compensation circuit 1215. The first compensation circuit 1215 may include a first diode D1 and a second diode D2. The first diode D1. The second diode D2 includes a positive terminal and a negative terminal. The positive terminal of the first diode D1 is electrically coupled to the first compensation circuit control signal Reset1, and the negative terminal of the first diode D1 is The negative terminal of the diode D2 is electrically coupled, and the positive terminal of the second diode D2 is electrically coupled to the driving circuit control signal Qn. FIG. 3B is a second embodiment of the first compensation circuit 1215. The first compensation circuit 1215 can include a transistor M31 and a transistor M32. The transistor M31 includes a first end, a control end, and a second end. The transistor M32 includes a first end, a control end and a second end. The first end of the transistor M31 is electrically coupled to the control end of the transistor M31 and the first compensation circuit control signal Reset1, and the second transistor M31. The end is electrically coupled to the second end of the transistor M32, and the first end of the transistor M32 and the control end of the transistor M32 are And driving circuit control signal Qn is electrically coupled.

請參考圖4A,圖4A為上述之第一補償電路1215 之實施例三,其包括電容C3、第二輸入電路40、電晶體M11、電晶體M8以及電晶體M9,電晶體M11具有一第一端、一第二端以及一控制端,電晶體M11之第一端與第二輸入電路40電性耦接,電晶體M11之控制端與第n級閘極驅動訊號Gn電性耦接,電晶體M11之第二端與低電壓準位VGL電性耦接。電晶體M8具有一第一端、一第二端以及一控制端,電晶體M8之第一端與第一補償電路控制訊號Reset1電性耦接,電晶體M8之控制端與電晶體M11之第一端電性耦接,電晶體M8之第二端則與電容C3電性耦接。電容C3具有一第一端以及一第二端,電容C3之第一端與電晶體M8之第二端電性耦接,電容C3之第二端與電晶體M8之控制端電性耦接。 電晶體M9具有一第一端、一第二端以及一控制端,電晶體M9之第一端與電晶體M8之第二端電性耦接,電晶體M9之控制端接收第一補償電路控制訊號Reset1,電晶體M9之第二端與驅動電路控制訊號Qn電性耦接。 Referring to FIG. 4A, FIG. 4A is a third embodiment of the first compensation circuit 1215, which includes a capacitor C3, a second input circuit 40, a transistor M11, a transistor M8, and a transistor M9. The transistor M11 has a first terminal, a second terminal and a control terminal, a first terminal of the transistor M11 and the second input circuit 40 is electrically coupled to the control terminal of the transistor M11 and the n-th stage of the gate drive signals G n are electrically coupled, The second end of the transistor M11 is electrically coupled to the low voltage level VGL. The transistor M8 has a first end, a second end and a control end. The first end of the transistor M8 is electrically coupled to the first compensation circuit control signal Reset1, and the control end of the transistor M8 and the transistor M11 are One end is electrically coupled, and the second end of the transistor M8 is electrically coupled to the capacitor C3. The capacitor C3 has a first end and a second end. The first end of the capacitor C3 is electrically coupled to the second end of the transistor M8, and the second end of the capacitor C3 is electrically coupled to the control end of the transistor M8. The transistor M9 has a first end, a second end and a control end. The first end of the transistor M9 is electrically coupled to the second end of the transistor M8, and the control end of the transistor M9 receives the first compensation circuit control. The signal Reset1, the second end of the transistor M9 is electrically coupled to the driving circuit control signal Qn.

請參考圖4B,圖4B為上述之第一補償電路1215 之實施例四,圖4B與圖4A之差別在於,電晶體M11之控制端是與第一時脈訊號CK電性耦接。 Please refer to FIG. 4B. FIG. 4B is the first compensation circuit 1215 described above. The fourth embodiment of FIG. 4B differs from FIG. 4A in that the control terminal of the transistor M11 is electrically coupled to the first clock signal CK.

請參考圖4C,圖4C為上述之第一補償電路1215 之實施例五,圖4C與圖4A之差別在於,圖4C更包括了電晶體M12,電晶體M12具有一第一端、一第二端以及一控制端,電晶體M12之第一端與電晶體M11之第一端電性耦接,電晶體M12之控制端與第一時脈訊號CK電性耦接,電晶體M12之第二端與低電壓準位電性耦接。其中,電晶體M12是用以根據第一時脈訊號CK將電晶體M8之控制端維持於低電壓準位VGL。 Please refer to FIG. 4C. FIG. 4C is the first compensation circuit 1215 described above. The fifth embodiment of FIG. 4C differs from FIG. 4A in that FIG. 4C further includes a transistor M12 having a first end, a second end, and a control end, and the first end of the transistor M12 is electrically connected. The first end of the transistor M11 is electrically coupled, and the control terminal of the transistor M12 is electrically coupled to the first clock signal CK, and the second end of the transistor M12 is electrically coupled to the low voltage level. The transistor M12 is configured to maintain the control terminal of the transistor M8 at a low voltage level VGL according to the first clock signal CK.

請參閱圖5A,圖5A為上述之第二輸入電路40 實施例一,第二輸入電路40包括一電晶體M10,電晶體M10具有一第一端、一第二端以及一控制端,電晶體M10之第一端與高電壓準位VGH電性耦接,電晶體M10之控制端接收第n-1級閘極驅動訊號Gn-1,電晶體M10之第二端與電晶體M11之第一端電性耦接,此外,電晶體M10之第一端也可與第n-1級閘極驅動訊號Gn-1電性耦接,如圖5B所示。 Referring to FIG. 5A, FIG. 5A is a second embodiment of the second input circuit 40. The second input circuit 40 includes a transistor M10. The transistor M10 has a first end, a second end, and a control end. The first end of the M10 is electrically coupled to the high voltage level VGH, and the control end of the transistor M10 receives the n-1th gate driving signal G n-1 , the second end of the transistor M10 and the transistor M11 The first end of the transistor M10 is also electrically coupled to the n-1th gate driving signal Gn -1 , as shown in FIG. 5B.

由於顯示面板13之畫素單元131可以由圖1所 示的L1列往Ln列的方向驅動,也可以由Ln列往L1列的方向驅動,因此本發明更提出以下的第一補償電路1215之實施例。 Since the pixel unit 131 of the display panel 13 can be driven from the L 1 column to the L n column as shown in FIG. 1 , it can also be driven from the L n column to the L 1 column. Therefore, the present invention further proposes the following first An embodiment of the compensation circuit 1215.

請參閱圖6A,圖6A為第一補償電路1215之實 施例六,其包括電容C4、電晶體M13、電晶體M14、電晶體M15以及電晶體M16。電晶體M13具有一第一端、一控制端以及一第二端,電晶體M13之第一端與一第一掃描訊號U2D電性耦接,電晶體M13之控制端與第n-1級閘極驅動訊號Gn-1電性耦接,電晶體M13之第二端與電晶體M14電性耦接。電晶體M14具有一第一端、一控制端以及一第二端,電晶體M14之第一端與一第二掃描訊號D2U電性耦接,電晶體M14之控制端與第n+1級閘極驅動訊號Gn+1電性耦接,電晶體M14之第二端與電晶體M13之第二端電性耦接。電晶體M15具有一第一端、一控制端以及一第二端,電晶體M15之第一端與第一補償電路控制訊號Reset1電性耦接,電晶體M15之控制端與電晶體M13之第二端電性耦接,電晶體M15之第二端與電容C4電性耦接。電容C4俱有一第端以及一第二端,電容C4之第一端與電晶體M15之第二端電性耦接,電容C4之第二端與電晶體M15之控制端電性耦接。電晶體M16具有一第一端、一控制端以及一第二端,電晶體M16之第一端與電晶體M15之第二端電性耦接,電晶體M16之控制端與第一 補償電路控制訊號Reset1電性耦接,電晶體M16之第二端與驅動電路控制訊號Qn電性耦接。其中,當第一掃描訊號U2D為致能,顯示面板13之畫素單元131由圖1所示的L1列往Ln列的方向驅動,當第二掃描訊號D2U為致能,顯示面板13之畫素單元131由圖1所示的Ln列往L1列的方向驅動,第一掃描訊號U2D與第二掃描訊號D2U的致能時間以及禁能時間為相反。 Please refer to FIG. 6A. FIG. 6A is a sixth embodiment of the first compensation circuit 1215, which includes a capacitor C4, a transistor M13, a transistor M14, a transistor M15, and a transistor M16. The transistor M13 has a first end, a control end and a second end. The first end of the transistor M13 is electrically coupled to a first scan signal U2D, and the control end of the transistor M13 is connected to the n-1th gate. The pole drive signal G n-1 is electrically coupled, and the second end of the transistor M13 is electrically coupled to the transistor M14. The transistor M14 has a first end, a control end and a second end. The first end of the transistor M14 is electrically coupled to a second scan signal D2U, and the control end of the transistor M14 and the n+1th gate The pole drive signal G n+1 is electrically coupled, and the second end of the transistor M14 is electrically coupled to the second end of the transistor M13. The transistor M15 has a first end, a control end and a second end. The first end of the transistor M15 is electrically coupled to the first compensation circuit control signal Reset1, and the control end of the transistor M15 and the transistor M13 are The second end is electrically coupled, and the second end of the transistor M15 is electrically coupled to the capacitor C4. The capacitor C4 has a first end and a second end. The first end of the capacitor C4 is electrically coupled to the second end of the transistor M15, and the second end of the capacitor C4 is electrically coupled to the control end of the transistor M15. The transistor M16 has a first end, a control end and a second end. The first end of the transistor M16 is electrically coupled to the second end of the transistor M15, and the control end of the transistor M16 is controlled by the first compensation circuit. The signal Reset1 is electrically coupled, and the second end of the transistor M16 is electrically coupled to the driving circuit control signal Qn. Wherein the pixel unit 131 of the panel 13 toward the direction L shown in FIG. 1 column L n columns when the first scan signal drive U2D is enabled, the display, when the second scan signal D2U is enabled, the display panel 13 The pixel unit 131 is driven by the L n column shown in FIG. 1 in the direction of the L 1 column, and the enable time and the disable time of the first scan signal U2D and the second scan signal D2U are opposite.

請參閱圖6B,圖6B為第一補償電路1215之實 施例七,圖6B與圖6A之差別在於,圖6B之第一補償電路1215實施例七更包括了電晶體M17以及電晶體M18。電晶體M17具有一第一端、一控制端以及一第二端,電晶體M17之第一端與電晶體M13之第二端電性耦接,電晶體M17之控制端與第n級閘極驅動訊號Gn電性耦接,電晶體M17之第二端與低電壓準位VGL電性耦接。電晶體M18具有一第一端、一控制端以及一第二端,電晶體M18之第一端與電晶體M13之第二端電性耦接,電晶體M18之控制端與第一時脈訊號CK電性耦接,電晶體M18之第二端與低電壓準位VGL電性耦接。其中,電晶體M17以及電晶體M18是用以根據第n級閘極驅動訊號Gn以及第一時脈訊號CK將電晶體M15之控制端,也就是電晶體M13之第二端維持於低電壓準位VGL。 Referring to FIG. 6B, FIG. 6B is a seventh embodiment of the first compensation circuit 1215. FIG. 6B is different from FIG. 6A in that the seventh embodiment of the first compensation circuit 1215 of FIG. 6B further includes a transistor M17 and a transistor M18. The transistor M17 has a first end, a control end and a second end. The first end of the transistor M17 is electrically coupled to the second end of the transistor M13, and the control terminal and the nth gate of the transistor M17. The driving signal G n is electrically coupled, and the second end of the transistor M17 is electrically coupled to the low voltage level VGL. The transistor M18 has a first end, a control end and a second end. The first end of the transistor M18 is electrically coupled to the second end of the transistor M13, and the control end of the transistor M18 and the first clock signal are connected. The CK is electrically coupled, and the second end of the transistor M18 is electrically coupled to the low voltage level VGL. Wherein the transistor M17 and the transistor M18 is used in accordance with the n-th stage gate drive signal G n of the first clock signal CK and the control terminal of the transistor M15, a second terminal of the transistor is maintained at a low voltage of M13 Level VGL.

請參考圖7,圖7為移位暫存器121之實施例之 訊號時序圖,其包括第一時脈訊號CK、第二時脈訊號XCK、輸入訊號Bi、驅動電路控制訊號Qn、第n級閘極驅動訊號Gn、第n-1級閘極驅動訊號Gn-1以及第n+1級閘極驅動訊號Gn+1,其中,第一時脈訊號CK與第二時脈訊號XCK之致能時間以及禁能時間為相反。 Please refer to FIG. 7. FIG. 7 is a timing diagram of the signal of the embodiment of the shift register 121, which includes a first clock signal CK, a second clock signal XCK, an input signal Bi, a driving circuit control signal Q n , and a first The n-th gate drive signal G n , the n-1th-th gate drive signal G n-1 , and the n+1-th gate drive signal G n+1 , wherein the first clock signal CK and the second clock The enable time and disable time of the signal XCK are reversed.

以下將配合圖2以及圖7來說明內嵌式觸控顯示 裝置10操作於無觸控事件發生且正常顯示並更新畫面的一顯 示時段時,移位暫存器121之實施例的運作方法。 The in-cell touch display will be described below with reference to FIG. 2 and FIG. 7 . The device 10 operates on a display where no touch event occurs and displays and updates the screen normally. The method of operation of the embodiment of shift register 121 is shown during the time period.

首先,在第n-1級閘極驅動訊號Gn-1為致能電壓 準位,例如為邏輯高電位的時段T1,此時第n+1級閘極驅動訊號Gn+1為非致能電壓準位,例如為邏輯低電位,輸入訊號Bi為致能電壓準位,例如為邏輯高電位,第一時脈訊號CK為非致能電壓準位,例如為邏輯低電位,第二時脈訊號XCK為致能電壓準位,例如為邏輯高電位。因此電晶體M4開啟,驅動電路控制訊號Qn因為電晶體M4開啟使得其電壓準位提升至一高電壓準位V1,電晶體M1為關閉,電晶體M2因為驅動電路控制訊號Qn提升至高電壓準位V1而開啟,而將電容C1之第二端下拉至低電壓準位VGL,故電晶體M3與電晶體M6為關閉,而電晶體M7因為驅動電路控制訊號Qn而開啟,但由於第一時脈訊號CK目前為非致能電壓準位,因此第n級閘極驅動訊號Gn為邏輯低電位,此外電晶體M5為開啟更將第n級閘極驅動訊號Gn維持於低電壓準位VGL。 First, at the n-1th gate drive signal G n-1 is an enable voltage level, for example, a period T 1 of a logic high potential, at which time the n+1th gate drive signal G n+1 is non- The enable voltage level is, for example, a logic low potential, and the input signal Bi is an enable voltage level, for example, a logic high potential, and the first clock signal CK is a non-enable voltage level, for example, a logic low potential, and a second The clock signal XCK is an enable voltage level, for example, a logic high potential. Thus transistor M4 is turned on, 1, transistor M1 is turned off, the transistor M2 as the driving circuit control signal Qn pulled to the high voltage level of the driving circuit control signal Qn since the transistor M4 is turned on so that the voltage level up to a high voltage level V The bit V 1 is turned on, and the second end of the capacitor C1 is pulled down to the low voltage level VGL, so the transistor M3 and the transistor M6 are turned off, and the transistor M7 is turned on because of the driving circuit control signal Qn, but due to the first the clock signal CK disenable the current voltage level, the n-th stage and therefore gate drive signal G n is a logic low, transistor M5 is turned on in addition to more n-th gate drive signal G n is maintained at a low voltage level V Bit VGL.

接著在時段T2,第n-1級閘極驅動訊號Gn-1、第 n+1級閘極驅動訊號Gn+1以及第二時脈訊號XCK為邏輯低電位,輸入訊號Bi以及第一時脈訊號CK為邏輯高電位,此時電晶體M4以及電晶體M1為關閉,電晶體M2因為驅動電路控制訊號Qn保持開啟,電晶體M3與電晶體M6保持關閉,電晶體M5因為第二時脈訊號XCK為邏輯低電位為關閉,而此時由於第一時脈訊號CK為邏輯高電位又電晶體M7維持開啟,因此電晶體M7會輸出邏輯高電位的第n級閘極驅動訊號Gn,同時第n級閘極驅動訊號Gn會透過電容C2使驅動電路控制訊號Qn由高電壓準位V1提升至高電壓準位V2,更增進電晶體M7之驅動能力。 Then, in the period T 2 , the n-1th gate driving signal G n-1 , the n+1th gate driving signal G n+1 and the second clock signal XCK are logic low, the input signal Bi and the The clock signal CK is at a logic high level. At this time, the transistor M4 and the transistor M1 are turned off, the transistor M2 is kept turned on because the driving circuit control signal Qn is kept turned on, the transistor M3 and the transistor M6 are kept off, and the transistor M5 is closed because of the second When the clock signal XCK is logic low, it is off. At this time, since the first clock signal CK is logic high and the transistor M7 is kept on, the transistor M7 outputs a logic high potential nth gate driving signal G. n, n-th stage while the gate drive signals G n be the driving circuit control signal Qn through capacitor C2 from the high voltage level V pulled to the high voltage level V 2 1, further enhance the driving capability of the transistor M7.

在時段T3時,第n-1級閘極驅動訊號Gn-1、輸入 訊號Bi以及第一時脈訊號CK為邏輯低電位,第二時脈訊號 XCK以及第n+1級閘極驅動訊號Gn+1為邏輯高電位,電晶體M4為關閉,電晶體M1因為第n+1級閘極驅動訊號Gn+1而開啟,而此時由於輸入訊號Bi為邏輯低電位,因此驅動電路控制訊號Qn被電晶體M1下拉至邏輯低電位,由於驅動電路控制訊號Qn被下拉至邏輯低電位,因此電晶體M2以及M7為關閉,而此時電容C1利用上一時段T2所儲存之第一時脈訊號CK之邏輯高電位使電晶體M3以及電晶體M6開啟,因此使驅動電路控制訊號Qn以及第n級閘極驅動訊號Gn被維持於邏輯低電位,電晶體M5為開啟,將第n級閘極驅動訊號Gn維持於邏輯低電位。 During the time period T 3 , the n-1th gate driving signal G n-1 , the input signal Bi and the first clock signal CK are logic low, the second clock signal XCK and the n+1th gate driving The signal G n+1 is logic high, the transistor M4 is off, and the transistor M1 is turned on because of the n+1th gate driving signal G n+1 , and at this time, since the input signal Bi is logic low, the driving is performed. The circuit control signal Qn is pulled down to the logic low level by the transistor M1. Since the driving circuit control signal Qn is pulled down to the logic low level, the transistors M2 and M7 are turned off, and at this time, the capacitor C1 is stored by the last period T2. a clock signal CK of the logic high level so that transistor M3 and the transistor M6 is turned on, so that the driving circuit and the control signal Qn n-th gate drive signal G n is maintained at a logic low level, the transistor M5 is turned on, the The nth gate drive signal Gn is maintained at a logic low level.

根據上述的內容可以得知,當內嵌式觸控顯示裝 置10操作顯示時段時,電晶體M7在時段T1被驅動電路控制訊號Qn開啟後,緊接著在時段T2即會根據第一時脈訊號CK輸出第n級閘極驅動訊號Gn,因此驅動電路控制訊號Qn不易受到漏電影響而導致其驅動能力下降的情況發生。 According to the above, when the in-cell touch display device 10 operates the display period, the transistor M7 is turned on by the driving circuit control signal Qn during the period T1, and then according to the first clock signal in the period T2. The CK outputs the n-th gate driving signal G n , so that the driving circuit control signal Qn is less susceptible to leakage current, resulting in a decrease in driving capability.

請參考圖8,圖8為移位暫存器121之實施例操 作於一觸控感測時段之訊號時序圖,其包括第一時脈訊號CK、第二時脈訊號XCK、第n-1級閘極驅動訊號Gn-1、第n-2級閘極驅動訊號Gn-2、第n-3級閘極驅動訊號Gn-3、第n-4級閘極驅動訊號Gn-4、第n-5級閘極驅動訊號Gn-5、第n級閘極驅動訊號Gn、第n+1級閘極驅動訊號Gn+1以及一第一補償電路控制訊號Reset1,其中,第一時脈訊號CK與第二時脈訊號XCK之致能時間以及禁能時間為相反。 Please refer to FIG. 8. FIG. 8 is a timing diagram of the operation of the shift register 121 in a touch sensing period, including a first clock signal CK, a second clock signal XCK, and an n-1 Stage gate drive signal G n-1 , n-2 stage gate drive signal G n-2 , n-3 stage gate drive signal G n-3 , n-4 stage gate drive signal G n- 4 , the n-5th gate drive signal G n-5 , the nth gate drive signal G n , the n+1th gate drive signal G n+1 and a first compensation circuit control signal Reset1, wherein The first clock signal CK is opposite to the enable time and the disable time of the second clock signal XCK.

以下將配合圖2以及圖8來說明內嵌式觸控顯示 裝置10操作於觸控事件發生之觸控感測時段時,移位暫存器121之實施例的運作方法。 The in-cell touch display will be described below with reference to FIG. 2 and FIG. 8 . The device 10 operates on the method of operating the embodiment of the scratchpad 121 when the touch sensing period in which the touch event occurs.

當內嵌式觸控顯示裝置10操作於上述之顯示時 段,也就是圖8的時段TD時,多個移位暫存器121將如上述 顯示時段之操作方式循序輸出多個閘極驅動訊號,如第n-5級閘極驅動訊號Gn-5、第n-4級閘極驅動訊號Gn-4、第n-3級閘極驅動訊號Gn-3、第n-2級閘極驅動訊號Gn-2以及第n-1級閘極驅動訊號Gn-1,因此內嵌式觸控顯示裝置10之顯示面板13會據以更新對應列之畫素單元131以顯示畫面,此時第一補償電路控制訊號Reset1為一低電壓準位,例如為邏輯低電位。而當內嵌式觸控顯示裝置10發生了觸控事件時,內嵌式觸控顯示裝置10即操作於觸控感測時段,即圖8中的時段TS,第n-1級的移位暫存器電路121輸出第n-1級閘極驅動訊號Gn-1後發生了觸控事件,因此第一補償電路控制訊號Reset1轉換為一高電壓準位,例如為邏輯高電位,而由於在觸控感測時段時,內嵌式觸控顯示裝置10停止更新顯示畫面,因此用以提供邏輯高電壓給電晶體M7以輸出第n級閘極驅動訊號Gn的第一時脈訊號CK以及第二時脈訊號XCK,因為觸控感測時段而維持於邏輯低電位,使原本應輸出第n級閘極驅動訊號Gn的第n級移位暫存器121不輸出第n級閘極驅動訊號GnWhen the in-cell touch display device 10 operates in the above display period, that is, the period T D of FIG. 8, the plurality of shift registers 121 sequentially output a plurality of gate driving signals in the operation mode of the display period. For example, the n-5th gate drive signal G n-5 , the n-4th gate drive signal G n-4 , the n-3th gate drive signal G n-3 , the n-2th gate The pole driving signal G n-2 and the n-1th gate driving signal G n-1 , so that the display panel 13 of the in-cell touch display device 10 updates the corresponding pixel unit 131 to display the image. At this time, the first compensation circuit control signal Reset1 is a low voltage level, for example, a logic low level. When the in-cell touch display device 10 has a touch event, the in-cell touch display device 10 operates in the touch sensing period, that is, the time period T S in FIG. 8 and the n-1th level shift. After the bit register circuit 121 outputs the n-1th gate driving signal G n-1 , a touch event occurs, so the first compensation circuit control signal Reset1 is converted to a high voltage level, for example, a logic high potential. Since the in-cell touch display device 10 stops updating the display screen during the touch sensing period, the first clock signal CK for supplying the logic high voltage to the transistor M7 to output the nth gate driving signal G n is and a second clock signal XCK, because the touch sensing period is maintained at a logic low level, to be output so that the original n-th gate drive signal G n of n-th stage shift register 121 does not output the n-th gate Pole drive signal G n .

然此時第n級移位暫存器121已接收了第n-1級 閘極驅動訊號Gn-1,因此驅動電路控制訊號Qn已提升至上述之高電壓準位V1,但第n級移位暫存器121在觸控感測時段並不輸出第n級閘極驅動訊號Gn,因此驅動電路控制訊號Qn需維持高電壓準位V1直到第n級移位暫存器121輸出第n級閘極驅動訊號Gn。而在輸出第n級閘極驅動訊號Gn之前,驅動電路控制訊號Qn會因為電晶體M1、電晶體M3以及電晶體M4所形成的漏電路徑漏電,因此當漏電發生時,第一補償電路控制訊號Reset1之邏輯高電位會高於目前驅動電路控制訊號Qn之電壓準位,第一補償電路1215自然產生由其第一端往第二端流動之一第一電流來補償驅動電路控制訊號Qn,使 驅動電路控制訊號Qn之電壓準位在不輸出第n級閘極驅動訊號Gn的觸控感測時段可維持於高電壓準位V1At this time, the nth stage shift register 121 has received the n-1th gate drive signal G n-1 , so the drive circuit control signal Q n has been raised to the above high voltage level V 1 , but the first The n-stage shift register 121 does not output the n-th gate driving signal G n during the touch sensing period, so the driving circuit control signal Q n needs to maintain the high voltage level V 1 until the n-th shift is temporarily stored. The device 121 outputs the nth gate driving signal G n . In the n-th stage before the output gate drive signals G n, Q n driving circuit control signal leakage path because transistor M1, the transistor M3 and the transistor M4 is formed a drain, so that when the leakage occurs, the first compensation circuit The logic high level of the control signal Reset1 is higher than the voltage level of the current driving circuit control signal Q n , and the first compensation circuit 1215 naturally generates a first current flowing from the first end to the second end to compensate the driving circuit control signal. Q n , the voltage level of the driving circuit control signal Q n can be maintained at the high voltage level V 1 during the touch sensing period in which the nth gate driving signal G n is not output.

當觸控感測時段結束,內嵌式觸控顯示裝置10 再次操作於顯示時段,第一補償電路控制訊號Reset1轉換為一低電壓準位,第一時脈訊號CK恢復為邏輯高電位以使第n級移位暫存器121可繼續輸出第n級閘極驅動訊號Gn,第二時脈訊號XCK則為相對於第一時脈訊號CK之邏輯低電位,驅動電路控制訊號Qn會因為電容C2而被第n級閘極驅動訊號Gn提升至高電壓準位V2,如圖7所示,因此內嵌式觸控顯示裝置10繼續正常更新顯示畫面。 When the touch sensing period is over, the in-cell touch display device 10 is again operated in the display period, the first compensation circuit control signal Reset1 is converted to a low voltage level, and the first clock signal CK is restored to a logic high level to enable n-stage shift register 121 may continue to stage the n-th gate drive signal G n, the second clock signal XCK compared with respect to the first clock signal CK of a logic low level, the driving circuit control signal Q n will because capacitor C2 n-th stage is the gate drive signal G n pulled to the high voltage level V 2, shown in Figure 7, so-cell touch display apparatus 10 to continue normal display screen is updated.

以下更配合圖示說明第一補償電路1215不同實 施例之操作方式。 In the following, the first compensation circuit 1215 is different from the illustration. The mode of operation of the example.

請先以圖3A、圖3B以及圖8為例,當內嵌式觸 控顯示裝置10操作於上述之觸控感測時段時,第一二極體D1正極端所耦接的第一補償電路控制訊號Reset1轉換為一高電壓準位,正極端與第一補償電路控制訊號Reset1電性耦接之第一二極體D1導通,又因為製程關係目前的電子元件之電性無法理想化,第二二極體D2仍會有電流流經,因此在第一補償電路控制訊號Reset1高於目前驅動電路控制訊號Qn之電壓準位的情況下,第一補償電路1215實施例一自然產生由其第一端往第二端流動之一第一電流來補償驅動電路控制訊號Qn。當內嵌式觸控顯示裝置10結束觸控感測時段並操作於上述之顯示時段時,第一補償電路控制訊號Reset1轉換為一低電壓準位,因此驅動電路控制訊號Qn之電壓準位會高於第一補償電路控制訊號Reset1,此時第二二極體D2為導通,因為電子元件之電性無法理想化的因素第一二極體D1會有電流流經,因此第一補償電路1215會產生由第二端往第一端流動之一第二電流,而為了減少驅動電路控制訊號Qn在顯示時段 經由第一補償電路1215漏電,第一補償電路1215之第二二極體D2或者電晶體T2之尺寸可大於第一二極體D1或者電晶體T1,使第二電流小於上述之第一電流,並有效減少第二電流之電流量。 As shown in FIG. 3A, FIG. 3B and FIG. 8 , when the in-cell touch display device 10 is operated in the touch sensing period, the first compensation circuit coupled to the positive terminal of the first diode D1 is used. The control signal Reset1 is converted to a high voltage level, and the first diode D1 electrically coupled to the first compensation circuit control signal Reset1 is turned on, and the current electronic component cannot be idealized due to the process relationship. twenty-two diode D2 will have a current flowing through, so the current drive circuit is higher than a case where the voltage level of the control signal Q n of the first control signal a Reset1 compensation circuit, a first embodiment of the compensation circuit 1215 by a naturally occurring to a first end of a first one of the second end of the flow compensating current driving circuit control signal Q n. When the in-cell touch display device 10 ends the touch sensing period and operates in the display period, the first compensation circuit control signal Reset1 is converted to a low voltage level, so the driving circuit controls the voltage level of the signal Q n . It will be higher than the first compensation circuit control signal Reset1. At this time, the second diode D2 is turned on. Because the electrical property of the electronic component cannot be idealized, the first diode D1 has a current flowing through it, so the first compensation circuit 1215 generates a second current flowing from the second end to the first end, and in order to reduce leakage of the driving circuit control signal Q n via the first compensation circuit 1215 during the display period, the second diode D2 of the first compensation circuit 1215 Alternatively, the size of the transistor T2 may be greater than the first diode D1 or the transistor T1 such that the second current is less than the first current and effectively reduces the amount of current of the second current.

接著以圖4A、圖4B、圖4C、圖5A、圖5B以及 圖8為例,首先,當內嵌式觸控顯示裝置10操作於上述之顯示時段且第n-1級閘極驅動訊號Gn-1為邏輯高電位時,第一補償電路控制訊號Reset1為低電壓準位,電晶體M10因為第n-1級閘極驅動訊號Gn-1為邏輯高電位為開啟,因此使得控制端與電晶體M10之第二端電性耦接的電晶體M8也開啟,而由於當級之移位暫存器121尚未輸出第n級閘極驅動訊號Gn,因此電晶體M11為關閉,控制端電性耦接第一補償電路控制訊號Reset1之電晶體M9也為關閉。接著當內嵌式觸控顯示裝置10操作於上述之觸控感測時段時,第一補償電路控制訊號Reset1由低電壓準位轉換為一高電壓準位,第n-1級閘極驅動訊號Gn-1為邏輯低電位,電晶體M10以及電晶體M11因此為關閉,電晶體M8保持為開啟,且由於此時第一補償電路控制訊號Reset1為高電壓準位,又電容C3電性耦接於電晶體M8之第二端以及控制端之間,因此電晶體M8會因為電容C3將第一補償電路控制訊號Reset1的高電壓準位補償至電晶體M8之控制端而具有更佳的驅動能力。電晶體M9則因為第一補償電路控制訊號Reset1轉換為一高電壓準位而開啟,因此此時第一補償電路1215自然產生由其第一端往第二端流動之一第一電流來補償驅動電路控制訊號Qn4A, FIG. 4B, FIG. 4C, FIG. 5A, FIG. 5B and FIG. 8 , firstly, when the in-cell touch display device 10 operates in the above display period and the n-1th gate driving signal G When n-1 is logic high, the first compensation circuit control signal Reset1 is at a low voltage level, and the transistor M10 is turned on because the n-1th gate driving signal Gn -1 is logic high, thus making the control terminal and the second terminal of the transistor M10 is coupled to the transistor M8 is also turned on, and because when the shift register stage 121 has been output n-th gate drive signal G n, so the transistor M11 is turned off, the control The transistor M9 electrically coupled to the first compensation circuit control signal Reset1 is also turned off. When the in-cell touch display device 10 is operated in the touch sensing period, the first compensation circuit control signal Reset1 is converted from a low voltage level to a high voltage level, and the n-1th gate driving signal is G n-1 is logic low, transistor M10 and transistor M11 are therefore turned off, transistor M8 is kept on, and since the first compensation circuit control signal Reset1 is at a high voltage level, capacitor C3 is electrically coupled. Connected between the second end of the transistor M8 and the control terminal, so that the transistor M8 has a better drive because the capacitor C3 compensates the high voltage level of the first compensation circuit control signal Reset1 to the control terminal of the transistor M8. ability. The transistor M9 is turned on because the first compensation circuit control signal Reset1 is converted to a high voltage level. Therefore, the first compensation circuit 1215 naturally generates a first current flowing from the first end to the second end to compensate the driving. Circuit control signal Q n .

當當級之移位暫存器121輸出第n級閘極驅動訊 號Gn,也就是內嵌式觸控顯示裝置10又重新操作於上述之顯示時段時,第一補償電路控制訊號Reset1轉換為低電壓準位,因此電晶體M9為關閉,電晶體M11因為第n級閘極驅 動訊號Gn而開啟,將電晶體M8之控制端下拉至低電壓準位,因此電晶體M8關閉,而此時由於驅動電路控制訊號Qn之電壓準位高於第一補償電路控制訊號Reset1之低電壓準位,故因為電子元件無法理想化之因素,自然會產生由第一補償電路1215之第二端往第一端流動之第二電流。其中由於第一時脈訊號CK為邏輯高電位時第n級閘極驅動訊號Gn也為邏輯高電位,觸控感測時段時第一時脈訊號CK為邏輯低電位,因此電晶體M11也可根據第一時脈訊號CK的控制來關閉電晶體M8。此外,更可藉由增加電晶體M12使電晶體M8之控制端可在正確的時段內維持於低電壓準位,以避免電晶體M8在錯誤的時間開啟,導致驅動電路控制訊號Qn藉由電晶體M15而大幅漏電。 When the shift register 121 of the current stage outputs the nth gate driving signal G n , that is, the in-cell touch display device 10 is again operated in the above display period, the first compensation circuit control signal Reset1 is converted to low. voltage level, so the transistor M9 is turned off, the transistor M11 as an n-level gate drive signal G n turned on, the control terminal of the transistor M8 is pulled down to a low voltage level, so the transistor M8 turn off, but this time Since the voltage level of the driving circuit control signal Q n is higher than the low voltage level of the first compensation circuit control signal Reset1, the second end of the first compensation circuit 1215 is naturally generated because the electronic component cannot be idealized. The second current flowing at the first end. The n-th gate driving signal Gn is also a logic high level when the first clock signal CK is at a logic high level, and the first clock signal CK is a logic low level during the touch sensing period, so the transistor M11 is also The transistor M8 can be turned off according to the control of the first clock signal CK. In addition, by increasing the transistor M12, the control terminal of the transistor M8 can be maintained at a low voltage level for the correct period of time to prevent the transistor M8 from being turned on at the wrong time, thereby causing the driving circuit control signal Q n by The transistor M15 is greatly leaked.

以下以圖6A、圖6B以及圖8為例,來說明第一 補償電路1215之操作方式。首先以第一掃描訊號U2D致能為例,也就是顯示面板13之畫素單元131由圖1所示的L1列往Ln列的方向驅動為例來進行說明,當內嵌式觸控顯示裝置10操作於上述之顯示時段且第n-1級閘極驅動訊號Gn-1為邏輯高電位時,電晶體M13為開啟,因此電晶體M15也據以開啟,而此時由於第一補償電路控制訊號Reset1為低電壓準位,因此電晶體M16為關閉,此時並無電流由第一補償電路1215之第一端往第二端流動。 The operation of the first compensation circuit 1215 will be described below with reference to FIGS. 6A, 6B, and 8. First, a first scan signal as an example U2D enabled, i.e. the display panel 13 of the pixel unit 131 is driven by a row direction L shown in FIG. 1 to L n columns described as an example, when the in-cell touch When the display device 10 operates in the above display period and the n-1th gate driving signal G n-1 is at a logic high level, the transistor M13 is turned on, so that the transistor M15 is also turned on, and at this time, the first The compensation circuit control signal Reset1 is at a low voltage level, so that the transistor M16 is turned off, and no current flows from the first end of the first compensation circuit 1215 to the second end.

接著當內嵌式觸控顯示裝置10操作於上述之觸 控感測時段時,第一補償電路控制訊號Reset1為高電壓準位,第n-1級閘極驅動訊號Gn-1為邏輯低電位,因此電晶體M13為關閉,但此時電晶體M15仍為開啟,因此可將電晶體M15第一端所耦接之第一補償電路控制訊號Reset1傳送至電晶體M16之第一端,電晶體M15更因為電容C4將第一補償電路控制訊號Reset1的高電壓準位補償至電晶體M15之控制 端而具有更佳的驅動能力,又此時電晶體M16因為第一補償電路控制訊號Reset1而開啟,第一補償電路控制訊號Reset1之高電壓準位高於驅動電路控制訊號Qn之電壓準位,因此此時第一補償電路1215產生由其第一端往第二端流動之第一電流。 When the in-cell touch display device 10 is operated in the touch sensing period, the first compensation circuit control signal Reset1 is at a high voltage level, and the n-1th gate driving signal G n-1 is at a logic low. The potential is so that the transistor M13 is turned off, but the transistor M15 is still turned on. Therefore, the first compensation circuit control signal Reset1 coupled to the first end of the transistor M15 can be transmitted to the first end of the transistor M16. The crystal M15 has better driving capability because the capacitor C4 compensates the high voltage level of the first compensation circuit control signal Reset1 to the control terminal of the transistor M15, and at this time, the transistor M16 controls the signal Reset1 because of the first compensation circuit. Turning on, the high voltage level of the first compensation circuit control signal Reset1 is higher than the voltage level of the driving circuit control signal Q n , so the first compensation circuit 1215 generates the first current flowing from the first end to the second end. .

當當級之移位暫存器121輸出第n級閘極驅動訊 號Gn,也就是內嵌式觸控顯示裝置10又重新操作於上述之顯示時段時,第一補償電路控制訊號Reset1轉換為低電壓準位,因此電晶體M16為關閉,由於此時驅動電路控制訊號Qn之電壓準位高於第一補償電路控制訊號Reset1之低電壓準位,故產生由第一補償電路1215之第二端往第一端流動之第二電流。而當第n+1級閘極驅動訊號Gn+1為邏輯高電壓時,電晶體M14開啟,此時由於第二掃描訊號D2U為禁能,例如為邏輯低電位,因此電晶體M15之控制端被重置為邏輯低電位,電晶體M15為關閉。在其他實施例中,更可藉由電晶體M17以及電晶體M18關閉電晶體M15,避免電晶體M15在錯誤的時間繼續開啟,導致驅動電路控制訊號Qn藉由電晶體M15而大幅漏電,如圖6B所示。此外,當第一掃描訊號U2D為禁能,第二掃描訊號D2U保持為致能,顯示面板13之畫素單元131由圖1所示的Ln列往L1列的方向驅動時,電晶體M15則藉由上一級的第n+1級閘極驅動訊號Gn+1來開啟。 When the shift register 121 of the current stage outputs the nth gate driving signal G n , that is, the in-cell touch display device 10 is again operated in the above display period, the first compensation circuit control signal Reset1 is converted to low. The voltage level is such that the transistor M16 is turned off. Since the voltage level of the driving circuit control signal Q n is higher than the low voltage level of the first compensation circuit control signal Reset1, the second compensation circuit 1215 is generated. a second current flowing to the first end. When the n+1th gate driving signal G n+1 is a logic high voltage, the transistor M14 is turned on. At this time, since the second scanning signal D2U is disabled, for example, a logic low potential, the control of the transistor M15 is performed. The terminal is reset to a logic low and the transistor M15 is off. In other embodiments, the transistor M15 can be turned off by the transistor M17 and the transistor M18 to prevent the transistor M15 from continuing to turn on at the wrong time, so that the driving circuit control signal Q n is greatly leaked by the transistor M15, such as Figure 6B shows. In addition, when the first scanning signal U2D is disabled, the second scanning signal D2U is enabled, and the pixel unit 131 of the display panel 13 is driven by the L n column shown in FIG. 1 in the direction of the L 1 column, the transistor M15 is turned on by the n+1th gate driving signal G n+1 of the previous stage.

根據上述的內容,由於圖4A、圖4B以及圖4C 中的電晶體M8,圖6A以及圖6B中的電晶體M15都是在接收到前一級的閘極驅動訊號,例如為第n-1級閘極驅動訊號Gn-1或第n+1級閘極驅動訊號Gn+1才會開啟,因此當該級的移位暫存器並非需要補償驅動電路控制訊號Qn移位暫存器時電晶體M8或電晶體M15並不會開啟,因此不會受到第一補償電路控制訊號Reset1為高電壓準位的影響,且藉由圖4A、 圖4B、圖4C、圖6A以及圖6B之電路架構更使得第一補償電路1215具有更低的第二電流,有效提高第一電流與第二電流的比率,避免驅動電路控制訊號Qn因為漏電流過大而導致移位暫存器121輸出能力下降。 According to the above, due to the transistor M8 in FIGS. 4A, 4B and 4C, the transistor M15 in FIGS. 6A and 6B is receiving the gate driving signal of the previous stage, for example, the n-1th stage. The gate driving signal G n-1 or the n+1th gate driving signal G n+1 is turned on, so when the shift register of the stage does not need to compensate the driving circuit control signal Q n shift register When the transistor M8 or the transistor M15 is not turned on, it is not affected by the first compensation circuit control signal Reset1 being at a high voltage level, and by means of FIGS. 4A, 4B, 4C, 6A and 6B more circuit structure 1215 such that the first compensation circuit having a second lower current, effectively increasing the ratio of the first and second currents, to avoid driving circuit control signal Q n as large leakage current caused by shift register 121 output capability decline.

請參考圖9,圖9為本發明之移位暫存器121之 另一實施例,圖9與圖2之差異在於,圖9包括了一第二補償電路1216,其第一端與第二補償電路控制訊號Reset2電性耦接,其第二端與驅動電路控制訊號Qn電性耦接,第一補償電路1215以及第二補償電路1216可以在不同時間交換運作,例如以一幀(Frame)為例,第一補償電路1215以及第二補償電路1216在不同幀交換運作。 Please refer to FIG. 9. FIG. 9 is another embodiment of the shift register 121 of the present invention. The difference between FIG. 9 and FIG. 2 is that FIG. 9 includes a second compensation circuit 1216, the first end and the second end thereof. The compensation circuit control signal Reset2 is electrically coupled, and the second end thereof is electrically coupled to the driving circuit control signal Q n , and the first compensation circuit 1215 and the second compensation circuit 1216 can be exchanged at different times, for example, one frame (Frame For example, the first compensation circuit 1215 and the second compensation circuit 1216 operate in different frame exchanges.

根據上述之內容,更匯整出一移位暫存器電路之 操作方法實施例,請參考圖10,其步驟包括:於上述之觸控感測時段,即圖8的時段TS時,第n級移位暫存器121之第n級閘極驅動訊號為禁能,第一補償電路控制訊號Reset1為上述之高電壓準位,且第一補償電路1215之第一端之電位大於第一補償電路1215之第二端之電位,第一補償電路1215產生由第一端往第二端流動之第一電流以補償驅動電路控制訊號Qn(步驟101)。 According to the above, an embodiment of the operation method of the shift register circuit is further described. Referring to FIG. 10, the steps include: during the touch sensing period, that is, the time period T S of FIG. The nth stage gate driving signal of the n-stage shift register 121 is disabled, the first compensation circuit control signal Reset1 is the above-mentioned high voltage level, and the potential of the first end of the first compensation circuit 1215 is greater than the first The first compensation circuit 1215 generates a first current flowing from the first end to the second end to compensate for the driving circuit control signal Q n (step 101).

在其他實施例中,移位暫存器電路之操作方法更 包括於上述之顯示時段,即圖8的時段TD時,第n級閘極驅動訊號於顯示時段被致能,第一補償電路控制訊號Reset1為低電壓準位,第一補償電路1215之第二端之電位大於第一補償電路1215之第一端之電位,第一補償電路1215產生由第二端往第一端流動之一第二電流,其中,第二電流可小於第一電流,以減少驅動電路控制訊號Qn在顯示時段經由第一補償電路1215漏電的情況(步驟102),如圖11所示。 In other embodiments, the operation method of the shift register circuit further includes the display period, that is, the period T D of FIG. 8, the nth gate driving signal is enabled during the display period, and the first compensation circuit is enabled. The control signal Reset1 is at a low voltage level, the potential of the second end of the first compensation circuit 1215 is greater than the potential of the first end of the first compensation circuit 1215, and the first compensation circuit 1215 generates one of the flow from the second end to the first end. a second current, wherein the second current may be smaller than the first current, to reduce the drive control circuit in the display period signal Q n via a first leakage compensation circuit 1215 (step 102), as shown in FIG.

綜以上所述,本發明所提出的移位暫存器電路實 施例因具有上述之補償電路,因此第n級移位暫存器電路121在觸控感測時段時,可利用第一補償電路1215所產生的電流來補償驅動電路控制訊號Qn,故當觸控感測時段結束,第n級移位暫存器電路121之驅動電路控制訊號Qn仍與觸控感測時段前之驅動電路控制訊號Qn,例如第n-1級移位暫存器電路121之驅動電路控制訊號Qn-1具有相同的驅動能力,避免因為驅動電路控制訊號Qn的驅動能力下降而發生顯示畫面出現橫紋的情況。 In summary, the embodiment of the shift register circuit of the present invention has the above-mentioned compensation circuit, so that the nth stage shift register circuit 121 can utilize the first compensation circuit during the touch sensing period. The current generated by 1215 compensates the driving circuit control signal Q n , so when the touch sensing period ends, the driving circuit control signal Q n of the nth stage shift register circuit 121 is still driven before the touch sensing period. The circuit control signal Q n , for example, the driving circuit control signal Q n-1 of the n- 1th stage shift register circuit 121 has the same driving capability, and avoids the display screen due to the driving capability of the driving circuit control signal Q n decreasing. The situation of horizontal stripes appears.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此技術者,在不脫離本發明之精神和範圍內,當可做些許之更動與潤飾,因此本發明之保護範圍當視後付之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any one skilled in the art can make some modifications and retouchings without departing from the spirit and scope of the present invention. The scope is subject to the definition of the patent application scope.

1211‧‧‧輸入電路 1211‧‧‧Input circuit

1212‧‧‧第一下拉電路 1212‧‧‧First pull-down circuit

1213‧‧‧上拉電路 1213‧‧‧ Pull-up circuit

1214‧‧‧第二下拉電路 1214‧‧‧Second pull-down circuit

1215‧‧‧第一補償電路 1215‧‧‧First compensation circuit

M1、M2、M3、M4、M5、M6、M7‧‧‧電晶體 M1, M2, M3, M4, M5, M6, M7‧‧‧ transistors

Gn-1‧‧‧第n-1級閘極驅動訊號 G n-1 ‧‧‧n - 1th gate drive signal

Gn‧‧‧第n級閘極驅動訊號 G n ‧‧‧n-th gate drive signal

Gn+1‧‧‧第n+1級閘極驅動訊號 G n+1 ‧‧‧n + 1th gate drive signal

CK‧‧‧第一時脈訊號 CK‧‧‧ first clock signal

XCK‧‧‧第二時脈訊號 XCK‧‧‧ second clock signal

VGL‧‧‧低電壓準位 VGL‧‧‧ low voltage level

C1‧‧‧電容 C1‧‧‧ capacitor

C2‧‧‧電容 C2‧‧‧ capacitor

Qn‧‧‧驅動電路控制訊號 Q n ‧‧‧Drive circuit control signal

Reset1‧‧‧第一補償電路控制訊號 Reset1‧‧‧First compensation circuit control signal

Bi‧‧‧輸入訊號 Bi‧‧‧ input signal

Claims (13)

一種移位暫存器電路,其包括:一輸入電路,係用以根據一第n-1級閘極驅動訊號輸出一驅動電路控制訊號;一第一下拉電路,與該輸入電路電性耦接,係用以將該驅動電路控制訊號下拉至一低電壓準位;一上拉電路,與該輸入電路電性耦接,係用以根據該驅動電路控制訊號輸出一第n級閘極驅動訊號;一第二下拉電路,與該上拉電路電性耦接,係用以將該第n級閘極驅動訊號下拉至該低電壓準位;以及一第一補償電路,其具有一第一端以及一第二端,該第一補償電路之該第一端與一第一補償電路控制訊號電性耦接,該第一補償電路之該第二端與該輸入電路以及該上拉電路電性耦接,於一觸控感測時段,該第一補償電路控制訊號為一高電壓準位,第n級閘極驅動訊號為禁能,該第一補償電路之該第一端之電位大於該第一補償電路之該第二端之電位時,該第一補償電路產生由該第一端往該第二端流動之一第一電流以補償該驅動電路控制訊號。 A shift register circuit includes: an input circuit for outputting a driving circuit control signal according to an n-1th gate driving signal; a first pull-down circuit electrically coupled to the input circuit Connected to pull the drive circuit control signal to a low voltage level; a pull-up circuit is electrically coupled to the input circuit for outputting an n-th gate drive according to the drive circuit control signal a second pull-down circuit electrically coupled to the pull-up circuit for pulling down the n-th gate drive signal to the low voltage level; and a first compensation circuit having a first And the first end of the first compensation circuit is electrically coupled to a first compensation circuit control signal, the second end of the first compensation circuit is electrically connected to the input circuit and the pull-up circuit The first compensation circuit control signal is a high voltage level, and the nth gate driving signal is disabled. The potential of the first end of the first compensation circuit is greater than When the potential of the second end of the first compensation circuit is A compensation circuit generated by the first end to the second end of one of a first current flow to the driving control signal compensation circuit. 如請求項1所述之移位暫存器電路,其中,該第一補償電路更包括一第一二極體以及一第二二極體,該第一二極體以及該第二二極體皆包括一正極端以及一負極端,該第一二極體之該正極端與該第一補償電路控制訊號電性耦接,該第一二極體之該負極端與該第二二極體之該負極端電性耦接,該第二二極體體之該正極端與該輸入電路以及該上拉電路電性耦接。 The shift register circuit of claim 1, wherein the first compensation circuit further comprises a first diode and a second diode, the first diode and the second diode The positive terminal and the negative terminal are electrically coupled to the first compensation circuit control signal, and the negative terminal and the second diode of the first diode The negative terminal is electrically coupled, and the positive terminal of the second diode body is electrically coupled to the input circuit and the pull-up circuit. 如請求項2所述之移位暫存器電路,其中,該第二二極體的尺寸大於該第一二極體。 The shift register circuit of claim 2, wherein the second diode has a larger size than the first diode. 如請求項2所述之移位暫存器電路,其中,該第一二極體為一第一電晶體,該第一電晶體具有一第一端、一第二端以及一控制端,該第二二極體為一第二電晶體,該第二電晶體具有一第一端、一第二端以及一控制端,該第一電晶體之該第一端與該第一電晶體之該控制端以及該第一補償電路控制訊號電性耦接,該第一電晶體之該第二端與該第二電晶體之該第二端電性耦接,該第二電晶體之該第一端與該第二電晶體之該控制端、該輸入電路以及該上拉電路電性耦接。 The shift register circuit of claim 2, wherein the first diode is a first transistor, the first transistor has a first end, a second end, and a control end, The second diode is a second transistor, the second transistor has a first end, a second end, and a control end, the first end of the first transistor and the first transistor The control terminal and the first compensation circuit control signal are electrically coupled. The second end of the first transistor is electrically coupled to the second end of the second transistor, and the first end of the second transistor The terminal is electrically coupled to the control terminal of the second transistor, the input circuit, and the pull-up circuit. 如請求項1所述之移位暫存器電路,其中,該第一補償電路更包括:一第二輸入電路;一第一電晶體,具有一第一端、一第二端以及一控制端,該第一電晶體之該第一端與該第二輸入電路電性耦接,該第一電晶體之該控制端與一控制訊號電性耦接,該第一電晶體之該第二端與該低電壓準位電性耦接;一第二電晶體,具有一第一端、一第二端以及一控制端,該第二電晶體之該第一端係用以接收該第一補償電路控制訊號,該第二電晶體之該控制端與該第一電晶體之該第一端電性耦接;以及一第三電晶體,具有一第一端、一第二端以及一控制端,該第三電晶體之該第一端與該第二電晶體之該第 二端電性耦接,該第三電晶體之該控制端係用以接收該第一補償電路控制訊號,該第三電晶體之該第二端與該第一補償電路之該第二端電性耦接。 The shift register circuit of claim 1, wherein the first compensation circuit further comprises: a second input circuit; a first transistor having a first end, a second end, and a control end The first end of the first transistor is electrically coupled to the second input circuit, and the control end of the first transistor is electrically coupled to a control signal, the second end of the first transistor Electrically coupled to the low voltage level; a second transistor having a first end, a second end, and a control end, the first end of the second transistor being configured to receive the first compensation a control signal, the control end of the second transistor is electrically coupled to the first end of the first transistor; and a third transistor having a first end, a second end, and a control end The first end of the third transistor and the second end of the second transistor The second end is electrically coupled, the control end of the third transistor is configured to receive the first compensation circuit control signal, and the second end of the third transistor is electrically coupled to the second end of the first compensation circuit Sexual coupling. 如請求項5所述之移位暫存器電路,其中,該第一補償電路更包括:一第四電晶體,具有一第一端、一第二端以及一控制端,該第四電晶體之該第一端與該第一電晶體之該第一端電性耦接,該第四電晶體之該控制端係用以接收一時脈訊號,該第四電晶體之該第二端與該低電壓準位電性耦接。 The shift register circuit of claim 5, wherein the first compensation circuit further comprises: a fourth transistor having a first end, a second end, and a control end, the fourth transistor The first end is electrically coupled to the first end of the first transistor, and the control end of the fourth transistor is configured to receive a clock signal, the second end of the fourth transistor The low voltage level is electrically coupled. 如請求項5所述之移位暫存器電路,其中,該第二輸入電路包括:一第四電晶體,具有一第一端、一第二端以及一控制端,該第四電晶體之該第一端與一高電壓準位電性耦接,該第四電晶體之該控制端接收一第n-1級閘極驅動訊號,該第四電晶體之該第二端與該第一電晶體之該第一端電性耦接。 The shift register circuit of claim 5, wherein the second input circuit comprises: a fourth transistor having a first end, a second end, and a control end, the fourth transistor The first end is electrically coupled to a high voltage level, and the control end of the fourth transistor receives an n-1th gate driving signal, the second end of the fourth transistor and the first The first end of the transistor is electrically coupled. 如請求項5所述之移位暫存器電路,其中,該第二輸入電路包括:一第四電晶體,具有一第一端、一第二端以及一控制端,該第四電晶體之該第一端與該控制端接收一第n-1級閘極驅動訊號,該第四電晶體之該第二端與該第一電晶體之該第一端電性耦接。 The shift register circuit of claim 5, wherein the second input circuit comprises: a fourth transistor having a first end, a second end, and a control end, the fourth transistor The first end and the control end receive an n-1th stage gate driving signal, and the second end of the fourth transistor is electrically coupled to the first end of the first transistor. 如請求項5所述之移位暫存器電路,其中,該控制訊 號為該第n級閘極驅動訊號或一時脈訊號。 The shift register circuit of claim 5, wherein the control signal The number is the nth gate drive signal or a clock signal. 如請求項1所述之移位暫存器電路,其中,該第一補償電路更包括:一第一電晶體,具有一第一端、一第二端以及一控制端,該第一電晶體之該第一端係用以接收一第一掃描訊號,該第一電晶體之該控制端係用以接收一第n-1級閘極驅動訊號;一第二電晶體,具有一第一端、一第二端以及一控制端,該第二電晶體之該第一端係用以接收一第二掃描訊號,該第二電晶體之該控制端係用以接收一第n+1級閘極驅動訊號,該第二電晶體之該第二端與該第一電晶體之該第二端電性耦接;一第三電晶體,具有一第一端、一第二端以及一控制端,該第三電晶體之該第一端係用以接收該第一補償電路控制訊號,該第三電晶體之該控制端與該第一電晶體之該第二端電性耦接;以及一第四電晶體,具有一第一端、一第二端以及一控制端,該第四電晶體之該第一端與該第三電晶體之該第二端電性耦接,該第四電晶體之該控制端係用以接收該第一補償電路控制訊號,該第四電晶體之該第二端與該第一補償電路之該第二端電性耦接。 The shift register circuit of claim 1, wherein the first compensation circuit further comprises: a first transistor having a first end, a second end, and a control end, the first transistor The first end is configured to receive a first scan signal, the control end of the first transistor is configured to receive an n-1th gate drive signal, and a second transistor has a first end a second end and a control end, the first end of the second transistor is configured to receive a second scan signal, and the control end of the second transistor is configured to receive an n+1th gate a second driving circuit, the second end of the second transistor is electrically coupled to the second end of the first transistor; a third transistor having a first end, a second end, and a control end The first end of the third transistor is configured to receive the first compensation circuit control signal, and the control end of the third transistor is electrically coupled to the second end of the first transistor; and a fourth transistor having a first end, a second end, and a control end, the first end of the fourth transistor and the third The second end of the fourth transistor is electrically coupled to receive the first compensation circuit control signal, the second end of the fourth transistor and the first compensation circuit The second end is electrically coupled. 如請求項10所述之移位暫存器電路,其中,該第一補償電路更包括:一第五電晶體,具有一第一端、一第二端以及一控制端,該第五電晶體之該第一端與該第二電晶體之該第二端電性耦接,該第五電晶體之該控制端係用以接收 該第n級閘極驅動訊號,該第五電晶體之該第二端係用以與該低電壓準位電性耦接;以及一第六電晶體,具有一第一端、一第二端以及一控制端,該第六電晶體之該第一端與該第二電晶體之該第二端電性耦接,該第六電晶體之該控制端係用以接收一時脈訊號,該第六電晶體之該第二端與該低電壓準位電性耦接。 The shift register circuit of claim 10, wherein the first compensation circuit further comprises: a fifth transistor having a first end, a second end, and a control end, the fifth transistor The first end is electrically coupled to the second end of the second transistor, and the control end of the fifth transistor is configured to receive The second-stage gate driving signal, the second end of the fifth transistor is electrically coupled to the low-voltage level; and a sixth transistor has a first end and a second end And a control end, the first end of the sixth transistor is electrically coupled to the second end of the second transistor, and the control end of the sixth transistor is configured to receive a clock signal, the first The second end of the sixth transistor is electrically coupled to the low voltage level. 如請求項1所述之移位暫存器電路,其中,該移位暫存器電路更包括一第二補償電路,其具有一第一端以及一第二端,該第二補償電路之該第一端與一第二補償電路控制訊號電性耦接,該第二補償電路之該第二端與該輸入電路以及該上拉電路電性耦接。 The shift register circuit of claim 1, wherein the shift register circuit further comprises a second compensation circuit having a first end and a second end, the second compensation circuit The first end is electrically coupled to a second compensation circuit control signal, and the second end of the second compensation circuit is electrically coupled to the input circuit and the pull-up circuit. 如請求項1所述之移位暫存器電路,其中,於一顯示時段,該第一補償電路控制訊號為一低電壓準位,該第n級閘極驅動訊號於該顯示時段被致能。 The shift register circuit of claim 1, wherein the first compensation circuit control signal is a low voltage level during a display period, and the nth gate drive signal is enabled during the display period. .
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