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TW201701727A - 一種有機電致發光器件及其製備方法 - Google Patents

一種有機電致發光器件及其製備方法 Download PDF

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Publication number
TW201701727A
TW201701727A TW105118809A TW105118809A TW201701727A TW 201701727 A TW201701727 A TW 201701727A TW 105118809 A TW105118809 A TW 105118809A TW 105118809 A TW105118809 A TW 105118809A TW 201701727 A TW201701727 A TW 201701727A
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Taiwan
Prior art keywords
organic electroluminescent
energy level
electroluminescent device
excited state
host
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TW105118809A
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English (en)
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TWI634813B (zh
Inventor
Lian Duan
dong-dong Zhang
Song Liu
Jing Xie
Fei Zhao
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Kunshan Govisionox Optoelectronics Co Ltd
Univ Tsinghua
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Publication of TW201701727A publication Critical patent/TW201701727A/zh
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Abstract

本發明涉及有機電致發光器件，包括基板，以及依次形成在所述基板上的發光器件，所述發光器件是由第一電極層、發光層和第二電極層組成；所述發光層包括主體材料和染料；所述主體材料為是由具有空穴傳輸能力和空穴傳輸能力的材料構成；所述主體材料中的至少一種材料的CT激發態的三線態能級T1高於n-π激發態的三線態能級S1，並且T1-S1□0.3eV；或者，所述主體材料中的至少一種材料的CT激發態的三線態能級T1高於n-π激發態的三線態能級S1，並且T1-S1□1eV，並且所述主體材料的n-π激發態的第二三線態能級和CT激發態的第一單線態能級的差值為-0.1~0.1eV。本發明採用的器件結構可以充分利用主體材料和染料中的三線態能量，提高發光效率的同時，增強了器件的使用壽命。

Description

一種有機電致發光器件及其製備方法
本發明涉及有機電致發光器件技術領域，特別是一種有機層為單一結構的有機電致發光器件。
有機電致發光器件OLED通常包括多個圖元，每個圖元由若干子圖元組成。目前在中小尺寸中廣泛應用方案之一是由紅、綠、藍三種圖元組成一個圖元。每種圖元包括空穴傳輸層、發光層、電子傳輸層，發光層與電子傳輸層之間設置有空穴/激子阻擋層，所述的發光層包括藍光發光層，綠光發光層或紅光發光層。此外，還可能需要在空穴傳輸層和空穴傳輸層之間設置綠光補償層和紅光補償層，進一步增加了工藝步驟路線。
為解決上述問題，人們探索採用單層發光層的器件結構，傳統的單層OLED器件因為多數有機材料的載流子注入不平衡，且載流子的傳送速率的巨大差異性，容易導致發光區域偏移至遷移率小的注入電極一側，如果是金屬電極，則容易導致電極對發光的淬滅，從而使效率和壽命受到影響。
為此，本發明所要解決的技術問題在於現有結構的單層結構有機電致發光器件由於激子猝滅導致的器件壽命短的問題，進而提供一種有機電致發光器件，該電致發光器件可以充分利用主體材料和染料中的三線態能量，提高發光效率的同時，增強了器件的使用壽命。
本發明還提供一種上述有機電致發光器件的製備方法。
為解決上述技術問題，本發明採用如下技術方案：一種有機電致發光器件，包括基板，以及依次形成在所述基板上的發 光器件，所述發光器件是由第一電極層、發光層和第二電極層組成；所述發光層包括主體材料和染料；所述主體材料是由具有電子傳輸能力和空穴傳輸能力的材料構成；所述主體材料中的至少一種材料的CT激發態的三線態能級T1高於n-π激發態的三線態能級S1，並且T1-S1 0.3eV；或者，所述主體材料中的至少一種材料的CT激發態的三線態能級T1高於n-π激發態的三線態能級S1，並且T1-S1 1eV，並且所述主體材料的n-π激發態的第二三線態能級和CT激發態的第一單線態能級的差值為-0.1~0.1eV。
優選地，所述主體材料為激基複合物，所述的激基複合物為熱活化延遲螢光材料。
另一優選地，所述主體材料為電子傳輸型材料和空穴傳輸型材料構成的激基複合物，二者的品質比為1：9-9：1。所述電子傳輸型材料和/或空穴傳輸型材料的T1-S1 0.3eV；或電子傳輸型材料和/或空穴傳輸型材料的T1-S1 1eV，並且所述主體材料的n-π激發態的第二三線態能級和CT激發態的第一單線態能級的差值為-0.1~0.1eV。
再一優選地，所述主體材料為熱活化延遲螢光材料TADF和空穴傳輸型材料的組合物，二者的品質比為1：9-9：1。所述熱活化延遲螢光材料TADF和/或空穴傳輸型材料的T1-S1 0.3eV；或熱活化延遲螢光材料TADF和/或空穴傳輸型材料的T1-S1 1eV，並且所述主體材料的n-π激發態的第二三線態能級和CT激發態的第一單線態能級的差值為-0.1~0.1eV。
再一優選地，所述主體材料為熱活化延遲螢光材料TADF和電子傳輸型材料的組合物，二者的品質比為1：9-9：1。所述熱活化延遲螢光材料TADF和/或電子傳輸型材料的T1-S1 0.3eV；或熱活化延遲螢光材料TADF和/或電子傳輸型材料的T1-S1 1eV，並且所述主體材料的n-π激發態的第二三線態能級和CT激發態的第一單線態能級的差值為-0.1~0.1eV。
所述的染料為螢光材料和/或磷光材料，所述螢光材料的摻雜濃度為0.5-10wt%，所述磷光材料的摻雜濃度為0.5-20wt%。
所述發光層(2)的厚度為50-150nm。
所述電子傳輸型材料為三(8-羥基喹啉)鋁、2,9-二甲基-4,7-二苯基-1,10-鄰菲咯啉、4,7-二苯基-1,10-鄰菲咯啉、二(2-甲基-8-喹啉基)-4-苯基苯酚鋁(III)、1,3,5-三(1-苯基-1H-苯並咪唑-2-基)苯或1,3,5-三[(3-吡啶基)-3-苯基]苯；
空穴傳輸型材料為N,N’-二-1-萘基)-N,N’-二苯基-1,1’-聯苯基-4,4’-二胺、N,N’-二苯基-N,N’-雙(間甲基苯基)-1,1’-聯苯基-4,4’-二胺、4,4’-環己基二[N,N-二(4-甲基苯基)]苯胺、4,4’-N,N’-二哢唑-聯苯、4,4',4"-三(哢唑-9-基)三苯胺或1,3-二哢唑-9-基苯；所述熱活化延遲螢光材料TADF具有式(1-1)-(1-100)所示結構：
一種上述有機電致發光器件的製備方法，包括下述步驟：在基板上使用開口掩膜板依次蒸鍍第一電極層，發光層和第二電極層；所述發光層由主體材料和染料採用共蒸鍍方式製備。
本發明的上述技術方案相比現有技術具有以下優點：
(1)本發明的目的在於構築單層的器件結構，提供的有機電致發光器件只需要包括第一電極層、發光層和第二電極層，所述的發光層僅由主體材料和染料採用共蒸鍍方式製備，無需製備空穴傳輸層、空穴阻擋層、電子傳輸層，電子阻擋層等相關有機層，極大的簡化了器件結構，縮短了製備工藝，降低了製備成本。
(2)本發明的發光層主體材料的T1-S1 0.3eV，該類材料為具有小的單三線態能級差的材料，具體是熱活化延遲螢光材料TADF，或者電子傳輸型材料和空穴傳輸型材料構成的激基複合物，或者電子傳輸型的熱活化延遲螢光材料TADF和空穴傳輸型材料的組合物，或者空穴傳輸型的熱活化延遲螢光材料TADF和電子傳輸型材料的組合物，這三種組合的材料具有給體和受體基團，因此具有同時傳輸空穴和電子的能力。同時，本發明採用的器件結構可以充分利用主體材料和染料中的三線態能量，這是因為單三線態能級差小，有利於電子和空穴的注入，解決了激子淬滅造成的效率低和壽命短的問題。因此，提高發光效率的同時，增強了器件的使用壽命。
1‧‧‧第一電極層
2‧‧‧發光層
3‧‧‧第二電極層
為了使本發明的內容更容易被清楚地理解，下面根據本發明的具體實施例並結合附圖，對本發明作進一步詳細的說明，其中圖1為本發明的有機電致發光器件的結構示意圖；其中：1-第一電極層，2-發光層，3-第二電極層。
下面將通過具體實施例對本發明作進一步的描述。
本發明可以以許多不同的形式實施，而不應該被理解為限於在此闡述的實施例。相反，提供這些實施例，使得本公開將是徹底和完整的，並且將把本發明的構思充分傳達給本領域技術人員，本發明將僅由權利要求來限定。在附圖中，為了清晰起見，會誇大層和區域的尺寸和相對尺寸。應當理解的是，當元件例如層、區域或基板被稱作“形成在”或“設置在”另一元件“上”時，該元件可以直接設置在所述另一元件上，或者也可以存在中間元件。相反，當元件被稱作“直接形成在”或“直接設置在”另一元件上時，不存在中間元件。
如圖1所示，本發明的有機電致發光器件，包括基板，以及依次形成在所述基板上的發光器件，所述發光器件是由第一電極層1、發光層2和第二電極層3組成；所述發光層是由主體材料和染料組成；所述主體材料是由具有電子傳輸能力和空穴傳輸能力的材料構成；所述主體材料中的至少一種材料的CT激發態的三線態能級T1高於n-π激發態的三線態能級S1，並且T1-S1 0.3eV；或者，所述主體材料中的至少一種材料的CT激發態的三線態能級T1高於n-π激發態的三線態能級S1，並且T1-S1 1eV，並且所述主體材料的n-π激發態的第二三線態能級和CT激發態的第一單線態能級的差值為-0.1~0.1eV。
熱活化延遲螢光材料為存在電荷轉移躍遷的材料，熱活化延遲螢光材料中同時存在給體基團單元和受體基團單元，同時具有電子傳輸能力和空穴傳輸能力，所述給體基團單元為一個給體基團或兩個以上的給體基團連接構成的基團；所述受體基團單元為一個受體基團或兩個以上的 受體基團連接構成的基團；具體地，所述熱活化延遲螢光材料為具有式(1-1)至式(1-100)所示結構的化合物。
本發明中的主體材料可以為單一的熱活化延遲螢光材料構成的激基複合物，也可以是電子傳輸型材料和空穴傳輸型材料構成的激基複合物。或者熱活化延遲螢光材料TADF和空穴傳輸型材料構成的組合物，主體材料為熱活化延遲螢光材料TADF和電子傳輸型材料構成的組合物。
所述電子傳輸型材料為三(8-羥基喹啉)鋁、2,9-二甲基-4,7-二苯基-1,10-鄰菲咯啉、4,7-二苯基-1,10-鄰菲咯啉、二(2-甲基-8-喹啉基)-4-苯基苯酚鋁(III)、1,3,5-三(1-苯基-1H-苯並咪唑-2-基)苯或1,3,5-三[(3-吡啶基)-3-苯基]苯；
空穴傳輸型材料為N,N’-二-(1-萘基)-N,N’-二苯基-1,1’-聯苯基-4,4’-二胺、N,N’-二苯基-N,N’-雙(間甲基苯基)-1,1’-聯苯基-4,4’-二胺、4,4’-環己基二[N,N-二(4-甲基苯基)]苯胺、4,4’-N,N’-二哢唑-聯苯、4,4',4"-三(哢唑-9-基)三苯胺或1,3-二哢唑-9-基苯；
本發明中使用的紅光染料為下式所示：
本發明中使用的綠光染料為下式所示：
本發明中使用的藍光染料為下式所示：
實施例1
本實施例的器件1結構如下： glass/ITO/(1-24)：CBP：Ir(piq)2(acac)(5%)/cathode
器件1中是由基板、陽極層、發光層和陰極層組成，不需要空穴注入層、 空穴傳輸層、電子注入層、電子傳輸層等，發光層主體材料為式(1-24)所示熱活化敏化螢光材料和空穴傳輸型材料CBP構成，二者的品質比為1：1。
器件1的製備方法為：在基板上使用開口掩膜板依次蒸鍍陽極層ITO，發光層和陰極層cathode，其中，發光層由主體材料(1-24)：CBP和染料Ir(piq)2(acac)採用共蒸鍍方式製備，染料Ir(piq)2(acac)的摻雜濃度為5wt%。
實施例2
本實施例的器件2結構如下： glass/ITO/(1-88)：BAlq：Ir(piq)2(acac)(5%)/cathode
器件2中發光層主體材料為電子傳輸型材料和式(1-88)所示熱活化敏化螢光材料構成，二者的品質比為1：1；此處熱活化敏化螢光材料為空穴傳輸型材料。
器件2的製備方法為：在基板上使用開口掩膜板依次蒸鍍陽極層ITO，發光層和陰極層cathode，其中，發光層由主體材料(1-88)：BAlq和染料Ir(piq)2(acac)採用共蒸鍍方式製備，染料Ir(piq)2(acac)的摻雜濃度為5wt%。
實施例3
本實施例的器件3結構如下： glass/ITO/(1-88)：(1-24)：Ir(piq)2(acac)(5%)/cathode
器件3中發光層主體材料為電子傳輸型熱活化敏化螢光材料和空穴傳輸型熱活化敏化螢光材料構成的激基複合物，二者的品質比為1：1。
器件3的製備方法為：在基板上使用開口掩膜板依次蒸鍍陽極層ITO，發光層和陰極層cathode，其中，發光層由主體材料(1-88)：(1-24)和染料Ir(piq)2(acac)採用共蒸鍍方式製備，染料Ir(piq)2(acac)的摻雜濃度為5wt%。
對比例1
本對比例的對比器件1結構如下： glass/ITO/HIL/HTL/CBP：Ir(piq)2(acac)(5%)/HBL/ETL/cathode
對比例2
本對比例的對比器件2結構如下： glass/ITO/HIL/HTL/BAlq：Ir(piq)2(acac)(20%)/HBL/ETL/cathode
對比例3
本對比例的對比器件3結構如下： glass/ITO/HIL/HTL/CBP：BAlq：Ir(piq)2(acac)(5%)/HBL/ETL/cathode
實施例4-12：
本實施例的器件4-12結構如下： glass/ITO/TADF：空穴傳輸型材料：螢光材料/cathode
其中TADF、空穴傳輸型材料、螢光材料採用的材料及所占比例如表2； 其中螢光材料的摻雜濃度是指螢光材料占發光層總重量的比例，即螢光材料的摻雜濃度=螢光材料的品質/(螢光材料的品質+TADF的品質+空穴傳輸型材料)×100%。
器件4-12的製備方法為：在基板上使用開口掩膜板依次蒸鍍陽極層ITO，發光層和陰極層cathode，其中，發光層由主體材料(TADF：空穴傳輸型材料)和螢光材料採用共蒸鍍方式製備。
實施例13-30：
本實施例的器件13-30結構如下： glass/ITO/TADF：電子傳輸型材料：螢光材料/cathode
其中TADF：電子傳輸型材料：螢光材料採用的材料及所占比例如表3； 其中螢光材料的摻雜濃度是指螢光材料占發光層總重量的比例，即螢光材料的摻雜濃度=螢光材料的品質/(螢光材料的品質+TADF的品質+電子傳輸型材料)×100%。
器件13-30的製備方法為：在基板上使用開口掩膜板依次蒸鍍陽極層ITO，發光層和陰極層cathode，其中，發光層由主體材料(TADF：電子傳輸型材料)和螢光材料採用共蒸鍍方式製備。
實施例31-45：
本實施例的器件31-45結構如下： glass/ITO/TADF：空穴傳輸型材料：磷光材料/cathode
其中TADF：空穴傳輸型材料：磷光材料採用的材料及所占比例如表3； 其中磷光材料的摻雜濃度是指螢光材料占發光層總重量的比例，即磷光材料的摻雜濃度=磷光材料的品質/(磷光材料的品質+TADF的品質+空穴傳輸型材料)×100%。
器件31-45的製備方法為：在基板上使用開口掩膜板依次蒸鍍陽極層ITO，發光層和陰極層cathode，其中，發光層由主體材料(TADF：空穴傳輸型材料)和磷光材料採用共蒸鍍方式製備。
實施例46-60：
本實施例的器件46-60結構如下： glass/ITO/TADF：電子傳輸型材料：磷光材料/cathode
其中TADF：電子傳輸型材料：磷光材料採用的材料及所占比例如表4； 其中磷光材料的摻雜濃度是指螢光材料占發光層總重量的比例，即磷光材料的摻雜濃度=磷光材料的品質/(磷光材料的品質+TADF的品質+電子傳輸型材料)×100%。
器件46-60的製備方法為：在基板上使用開口掩膜板依次蒸鍍陽極層ITO，發光層和陰極層cathode，其中，發光層由主體材料(TADF：電子傳輸型材料)和磷光材料採用共蒸鍍方式製備。
實施例61-74：
本實施例的器件61-74結構如下： glass/ITO/TADF：染料/cathode
其中TADF：染料採用的材料及所占比例如表4； 其中，染料為螢光材料和/或磷光材料，染料的摻雜濃度是指染料占發光層總重量的比例，即染料的摻雜濃度=染料的品質/(染料的品質+TADF的品質)×100%。
器件61-74的製備方法為：在基板上使用開口掩膜板依次蒸鍍陽極層ITO，發光層和陰極層cathode，其中，發光層由主體材料TADF和染料採用共蒸鍍方式製備。
對上述器件4-器件74中的部分器件性能測試結果如下：
有關式(1-85)至式(1-98)所示化合物合成的實施例
實施例75
合成式(1-85)所示結構化合物：在氮氣氛圍下，將1mol叔丁醇鉀溶解到20mlDML中攪拌1小時，然後將溶有1mol哢唑的DML溶液逐滴加入，全部加完後攪拌1小時。隨後將溶有0.2mol 2,3,4,5,6-五氟苯腈的DMF溶液逐滴加入，攪拌5小時。隨後將反應液倒入水中，過濾得到固體。用色譜柱分離。得式(1-85)所示結構化合物，產率90%。
質譜：929。
元素分析：C：86.60，H：4.35，N：9.05。
實施例76
合成式(1-86)所示結構化合物。反應物哢唑替換為叔丁基哢唑，經過與實施例75相同的合成方法，得式(1-86)所示結構化合物，產率91%。
質譜：1490。
元素分析：C：86.20,H：8.16,N：5.64。
實施例77
合成式(1-87)所示結構化合物。反應物哢唑替換為苯基哢唑，經過與實施例75相同的合成方法，得式(1-87)所示結構化合物，產率91%。
質譜：1689。
元素分析：C：90.20 H：4.83 N：4.97。
實施例78
合成式(1-88)所示結構化合物。在氮氣氛圍下，將1mol叔丁醇鉀溶解到20mlDML中攪拌1小時，然後將溶有1mol哢唑的DML溶液逐滴加入，全部加完後攪拌1小時。隨後將溶有0.25mol 2,3,5,6-四氟苯腈的DMF溶液逐滴加入，攪拌5小時。隨後將反應液倒入水中，過濾得到固體。用色譜柱分離。得式(1-88)所示結構化合物，產率90%。
質譜：763。
元素分析：C：86.47,H：4.36,N：9.17。
實施例79
合成式(1-89)所示結構化合物。反應物哢唑替換為叔丁基哢唑，經過與實施例78相同的合成方法，得式(1-89)所示結構化合物，產率91%。
質譜：1212。
元素分析：C：86.15,H：8.07,N：5.77。
實施例80
合成式(1-90)所示結構化合物。反應物哢唑替換為甲基哢唑，經過與實施例78相同的合成方法，得式(1-90)所示結構化合物，產率91%。
質譜：876。
元素分析：C：86.36,H：5.65,N：7.99。
實施例81
合成式(1-91)所示結構化合物。反應物哢唑替換為苯基哢唑，經過與實施例78相同的合成方法，得式(1-91)所示結構化合物，產率91%。
質譜：1372。
元素分析：C：90.10 H：4.79 N：5.10。
實施例82
合成式(1-92)所示結構化合物。反應物哢唑替換為甲氧基哢唑，經過與實施例78相同的合成方法，得式(1-92)所示結構化合物，產率91%。
質譜：1004。
元素分析：C：75.35 H：4.93,N：6.97。
實施例83
合成式(1-93)所示結構化合物。在氮氣氛圍下，將1mol叔丁醇鉀溶解到20mlDML中攪拌1小時，然後將溶有1mol甲氧基哢唑的DML溶液逐滴加入，全部加完後攪拌1小時。隨後將溶有0.33mol2,4,6-三氟苯腈的DMF溶液逐滴加入，攪拌5小時。隨後將反應液倒入水中，過濾得到固體。用色譜柱分離。得式(1-93)所示結構化合物，產率90%。
質譜：778。
元素分析：C：75.55 H：4.93 N：7.19。
實施例84
合成式(1-94)所示結構化合物。反應物甲氧基哢唑替換為叔丁基哢唑，經過與實施例83相同的合成方法，得式(1-94)所示結構化合物，產率91%。
質譜：935。
元素分析：C：86.00 H：7.81 N：5.99。
實施例85
合成式(1-95)所示結構化合物。反應物哢唑替換為吩惡嗪，經過與實施例78相同的合成方法，得式(1-95)所示結構化合物，產率91%。
質譜：829。
元素分析：C：79.79 H：4.00 N：8.48。
實施例86
合成式(1-96)所示結構化合物。反應物哢唑替換為吩噻嗪，經過與實施例78相同的合成方法，得式(1-96)所示結構化合物，產率91%。
質譜：892。
元素分析：C：74.05,H：3.70 N：7.88。
實施例87
合成式(1-97)所示結構化合物。反應物哢唑替換為吖啶，經過與實施例78相同的合成方法，得式(1-97)所示結構化合物，產率91%。
質譜：932。
元素分析：C：86.32 H：6.15 N：7.52。
實施例88
合成式(1-98)所示結構化合物。反應物哢唑替換為吩嗪，經過與實施例78相同的合成方法，得式(1-98)所示結構化合物，產率91%。
質譜：880。
元素分析：C：80.50 H：5.17 N：14.32
顯然，上述實施例僅僅是為清楚地說明所作的舉例，而並非對實施方式的限定。對於所屬領域的普通技術人員來說，在上述說明的基礎上還可以做出其它不同形式的變化或變動。這裡無需也無法對所有的實施方式予以窮舉。而由此所引伸出的顯而易見的變化或變動仍處於本發明創造的保護範圍之中。
1‧‧‧第一電極層
2‧‧‧發光層
3‧‧‧第二電極層

Claims (12)

  1. 一種有機電致發光器件，包括基板，以及依次形成在所述基板上的發光器件，其特徵在於，所述發光器件包括第一電極層、發光層和第二電極層；所述發光層包括主體材料和染料；所述主體材料是由具有電子傳輸能力和空穴傳輸能力的材料構成；所述主體材料中的至少一種材料的CT激發態的三線態能級T1高於n-π激發態的三線態能級S1，並且T1-S1 0.3eV；或者所述主體材料中的至少一種材料的CT激發態的三線態能級T1高於n-π激發態的三線態能級S1，並且T1-S1 1eV，並且所述主體材料的n-π激發態的第二三線態能級和CT激發態的第一單線態能級的差值為-0.1~0.1eV。
  2. 如申請專利範圍第1項所述的有機電致發光器件，其中，所述主體材料為激基複合物，所述的激基複合物為熱活化延遲螢光材料。
  3. 如申請專利範圍第1項所述的有機電致發光器件，其中，所述主體材料為電子傳輸型材料和空穴傳輸型材料構成的激基複合物，二者的品質比為1：9-9：1。
  4. 如申請專利範圍第3項所述的有機電致發光器件，其中，所述電子傳輸型材料和/或空穴傳輸型材料的T1-S1 0.3eV；或電子傳輸型材料和/或空穴傳輸型材料的T1-S1 1eV，並且所述主體材料的n-π激發態的第二三線態能級和CT激發態的第一單線態能級的差值為-0.1~0.1eV。
  5. 如申請專利範圍第1項所述的有機電致發光器件，其中，所述主體材料為熱活化延遲螢光材料和空穴傳輸型材料的組合物，二者的品質比為1：9-9：1。
  6. 如申請專利範圍第5項所述的有機電致發光器件，其中，所述熱活化延 遲螢光材料和/或空穴傳輸型材料的T1-S1 0.3eV；或熱活化延遲螢光材料和/或空穴傳輸型材料的T1-S1 1eV，並且所述主體材料的n-π激發態的第二三線態能級和CT激發態的第一單線態能級的差值為-0.1~0.1eV。
  7. 如申請專利範圍第1項所述的有機電致發光器件，其中，所述主體材料為熱活化延遲螢光材料和電子傳輸型材料的組合物，二者的品質比為1：9-9：1。
  8. 如申請專利範圍第7項所述的有機電致發光器件，其中，所述熱活化延遲螢光材料和/或電子傳輸型材料的T1-S1 0.3eV；或熱活化延遲螢光材料和/或電子傳輸型材料的T1-S1 1eV，並且所述主體材料的n-π激發態的第二三線態能級和CT激發態的第一單線態能級的差值為-0.1~0.1eV。
  9. 如申請專利範圍第1項所述的有機電致發光器件，其中，所述的染料為螢光材料和/或磷光材料，所述螢光材料的摻雜濃度為0.5-10wt%，所述磷光材料的摻雜濃度為0.5-20wt%。
  10. 如申請專利範圍第1項所述的有機電致發光器件，其中，所述發光層(2)的厚度為50-150nm。
  11. 如申請專利範圍第1項至第10項中之任一項所述的有機電致發光器件，其中，所述電子傳輸型材料為三(8-羥基喹啉)鋁、2,9-二甲基-4,7-二苯基-1,10-鄰菲咯啉、4,7-二苯基-1,10-鄰菲咯啉、二(2-甲基-8-喹啉基)-4-苯基苯酚鋁(III)、1,3,5-三(1-苯基-1H-苯並咪唑-2-基)苯或1,3,5-三[(3-吡啶基)-3-苯基]苯；空穴傳輸型材料為N,N’-二-1-萘基)-N,N’-二苯基-1,1’-聯苯基-4,4’-二胺、N,N’-二苯基-N,N’-雙(間甲基苯基)-1,1’-聯苯基-4,4’-二胺、4,4’-環己基二[N,N-二(4-甲基苯基)]苯胺、4,4’-N,N’-二哢唑-聯苯、4,4',4"-三(哢唑-9-基)三苯胺或1,3-二哢唑-9-基苯；所述熱活化延遲螢光材料TADF具有式(1-1)-(1-100)所示結構：
  12. 一種如申請專利範圍第1項至第11項中之任一項所述的有機電致發光器件的製備方法，包括下述步驟：在基板上使用開口掩膜板依次蒸鍍第一電極層、發光層和第二電極層；所述發光層由主體材料和染料採用共蒸鍍方式製備。
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